Spatially selective assembly of quantum dot light emitters in an LED using engineered peptides.

PubMed

Demir, Hilmi Volkan; Seker, Urartu Ozgur Safak; Zengin, Gulis; Mutlugun, Evren; Sari, Emre; Tamerler, Candan; Sarikaya, Mehmet

2011-04-26

Semiconductor nanocrystal quantum dots are utilized in numerous applications in nano- and biotechnology. In device applications, where several different material components are involved, quantum dots typically need to be assembled at explicit locations for enhanced functionality. Conventional approaches cannot meet these requirements where assembly of nanocrystals is usually material-nonspecific, thereby limiting the control of their spatial distribution. Here we demonstrate directed self-assembly of quantum dot emitters at material-specific locations in a color-conversion LED containing several material components including a metal, a dielectric, and a semiconductor. We achieve a spatially selective immobilization of quantum dot emitters by using the unique material selectivity characteristics provided by the engineered solid-binding peptides as smart linkers. Peptide-decorated quantum dots exhibited several orders of magnitude higher photoluminescence compared to the control groups, thus, potentially opening up novel ways to advance these photonic platforms in applications ranging from chemical to biodetection.

Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength.

PubMed

De Greve, Kristiaan; Yu, Leo; McMahon, Peter L; Pelc, Jason S; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa

2012-11-15

Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

Direct photonic coupling of a semiconductor quantum dot and a trapped ion.

PubMed

Meyer, H M; Stockill, R; Steiner, M; Le Gall, C; Matthiesen, C; Clarke, E; Ludwig, A; Reichel, J; Atatüre, M; Köhl, M

2015-03-27

Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of a Yb^{+} ion. We ameliorate the effect of the 60-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the σ_{z} projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum-state transfer in a hybrid photonic network.

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

PubMed

Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

2014-07-03

The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

Quantum Dots in a Polymer Composite: A Convenient Particle-in-a-Box Laboratory Experiment

ERIC Educational Resources Information Center

Rice, Charles V.; Giffin, Guinevere A.

2008-01-01

Semiconductor quantum dots are at the forefront of materials science chemistry with applications in biological imaging and photovoltaic technologies. We have developed a simple laboratory experiment to measure the quantum-dot size from fluorescence spectra. A major roadblock of quantum-dot based exercises is the particle synthesis and handling;…

Synthesis and characterization of CdSe/ZnS quantum dots conjugated with poly (ethylene glycol) diamine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bharti, Shivani; Tripathi, S. K., E-mail: surya@pu.ac.in; Kaur, Gurvir

2015-08-28

Bio-functionalization or surface modification is an important technique to obtain biocompatibility in semiconductor nanoparticles for biomedical applications. In this study semiconductor core/shell quantum dots of CdSe/ZnS have been prepared by chemical reduction method and then further PEGylated using Poly(ethylene glycol) diamine of M{sub w} 2000. They were characterized by UV-vis spectroscopy & Fourier transform infrared spectroscopy. The results reveals the successful PEGylation of CdSe/ZnS quantum dots.

Gate-controlled electromechanical backaction induced by a quantum dot

NASA Astrophysics Data System (ADS)

Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

2016-04-01

Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

Semiconductor quantum dot super-emitters: spontaneous emission enhancement combined with suppression of defect environment using metal-oxide plasmonic metafilms

NASA Astrophysics Data System (ADS)

Sadeghi, Seyed M.; Wing, Waylin J.; Gutha, Rithvik R.; Sharp, Christina

2018-01-01

We demonstrate that a metal-oxide plasmonic metafilm consisting of a Si/Al oxide junction in the vicinity of a thin gold layer can quarantine excitons in colloidal semiconductor quantum dots against their defect environments. This process happens while the plasmon fields of the gold layer enhance spontaneous emission decay rates of the quantum dots. We study the emission dynamics of such quantum dots when the distance between the Si/Al oxide junction and the gold thin layer is varied. The results show that for distances less than a critical value the lifetime of the quantum dots can be elongated while they experience intense plasmon fields. This suggests that the metal-oxide metafilm can keep photo-excited electrons in the cores of the quantum dots, suppressing their migration to the surface defect sites. This leads to suppression of Auger recombination, offering quantum dot super-emitters with emission that is enhanced not only by the plasmon fields (Purcell effect), but also by strong suppression of the non-radiative decay caused by the defect sites.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Vandersypen, L. M. K.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

PubMed Central

2011-01-01

Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

DOEpatents

Forrest, Stephen R.

2008-08-19

A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

PubMed

Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

2013-04-19

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Few-Photon Model of the Optical Emission of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Richter, Marten; Carmele, Alexander; Sitek, Anna; Knorr, Andreas

2009-08-01

The Jaynes-Cummings model provides a well established theoretical framework for single electron two level systems in a radiation field. Similar exactly solvable models for semiconductor light emitters such as quantum dots dominated by many particle interactions are not known. We access these systems by a generalized cluster expansion, the photon-probability cluster expansion: a reliable approach for few-photon dynamics in many body electron systems. As a first application, we discuss vacuum Rabi oscillations and show that their amplitude determines the number of electrons in the quantum dot.

Theory of few photon dynamics in light emitting quantum dot devices

NASA Astrophysics Data System (ADS)

Carmele, Alexander; Richter, Marten; Sitek, Anna; Knorr, Andreas

2009-10-01

We present a modified cluster expansion to describe single-photon emitters in a semiconductor environment. We calculate microscopically to what extent semiconductor features in quantum dot-wetting layer systems alter the exciton and photon dynamics in comparison to the atom-like emission dynamics. We access these systems by the photon-probability-cluster-expansion: a reliable approach for few photon dynamics in many body electron systems. As a first application, we show that the amplitude of vacuum Rabi flops determines the number of electrons in the quantum dot.

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

PubMed

Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

2018-05-09

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk.

PubMed

Kim, Je-Hyung; Ko, Young-Ho; Gong, Su-Hyun; Ko, Suk-Min; Cho, Yong-Hoon

2013-01-01

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

Semiconductor Quantum Dots with Photoresponsive Ligands.

PubMed

Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

2016-10-01

Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

Unbound states in quantum heterostructures

PubMed Central

Bastard, G

2006-01-01

We report in this review on the electronic continuum states of semiconductor Quantum Wells and Quantum Dots and highlight the decisive part played by the virtual bound states in the optical properties of these structures. The two particles continuum states of Quantum Dots control the decoherence of the excited electron – hole states. The part played by Auger scattering in Quantum Dots is also discussed.

Effect of the Semiconductor Quantum Dot Shell Structure on Fluorescence Quenching by Acridine Ligand

NASA Astrophysics Data System (ADS)

Linkov, P. A.; Vokhmintcev, K. V.; Samokhvalov, P. S.; Laronze-Cochard, M.; Sapi, J.; Nabiev, I. R.

2018-02-01

The main line of research in cancer treatment is the development of methods for early diagnosis and targeted drug delivery to cancer cells. Fluorescent semiconductor core/shell nanocrystals of quantum dots (e.g., CdSe/ZnS) conjugated with an anticancer drug, e.g., an acridine derivative, allow real-time tracking and control of the process of the drug delivery to tumors. However, linking of acridine derivatives to a quantum dot can be accompanied by quantum dot fluorescence quenching caused by electron transfer from the quantum dot to the organic molecule. In this work, it has been shown that the structure of the shell of the quantum dot plays the decisive role in the process of photoinduced charge transfer from the quantum dot to the acridine ligand, which is responsible for fluorescence quenching. It has been shown that multicomponent ZnS/CdS/ZnS shells of CdSe cores of quantum dots, which have a relatively small thickness, make it possible to significantly suppress a decrease in the quantum yield of fluorescence of quantum dots as compared to both the classical ZnS thin shell and superthick shells of the same composition. Thus, core/multicomponent shell CdSe/ZnS/CdS/ZnS quantum dots can be used as optimal fluorescent probes for the development of systems for diagnosis and treatment of cancer with the use of anticancer compounds based on acridine derivatives.

Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.

PubMed

Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K

2017-08-02

Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

NASA Astrophysics Data System (ADS)

Nötzel, Richard

2009-07-01

This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

Quantum Entanglement of Quantum Dot Spin Using Flying Qubits

DTIC Science & Technology

2015-05-01

QUANTUM ENTANGLEMENT OF QUANTUM DOT SPIN USING FLYING QUBITS UNIVERSITY OF MICHIGAN MAY 2015 FINAL TECHNICAL REPORT APPROVED FOR PUBLIC RELEASE...To) SEP 2012 – DEC 2014 4. TITLE AND SUBTITLE QUANTUM ENTANGLEMENT OF QUANTUM DOT SPIN USING FLYING QUBITS 5a. CONTRACT NUMBER FA8750-12-2-0333...been to advance the frontier of quantum entangled semiconductor electrons using ultrafast optical techniques. The approach is based on

Experimental observation of Fano effect in Ag nanoparticle-CdTe quantum dot hybrid system

NASA Astrophysics Data System (ADS)

Gurung, Sabina; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Chari, Rama

2018-04-01

We have experimentally measured the optical properties of Ag nanoparticle-CdTe quantum dot hybrid system and compared it with that of bare CdTe quantum dot colloid. It has been shown that the photoluminescence line shape of CdTe quantum dots becomes asymmetric in presence of Ag nanoparticles. The observed changes in the PL spectrum closely match the expected changes in the line shape due to Fano interaction between discrete level and continuum levels. Our experiment shows that a very small fraction of metal nanoparticles in the metal-semiconductor hybrid is sufficient to induce such changes in line shape which is in contrary to the earlier reported theoretical prediction on metal-semiconductor hybrid.

Exciton shelves for charge and energy transport in third-generation quantum-dot devices

NASA Astrophysics Data System (ADS)

Goodman, Samuel; Singh, Vivek; Noh, Hyunwoo; Casamada, Josep; Chatterjee, Anushree; Cha, Jennifer; Nagpal, Prashant

2014-03-01

Quantum dots are semiconductor nanocrystallites with size-dependent quantum-confined energy levels. While they have been intensively investigated to utilize hot-carriers for photovoltaic applications, to bridge the mismatch between incident solar photons and finite bandgap of semiconductor photocells, efficient charge or exciton transport in quantum-dot films has proven challenging. Here we show development of new coupled conjugated molecular wires with ``exciton shelves'', or different energy levels, matched with the multiple energy levels of quantum dots. Using single nanoparticle and ensemble device measurements we show successful extraction and transport of both bandedge and high-energy charge carriers, and energy transport of excitons. We demonstrate using measurements of electronic density of states, that careful matching of energy states of quantum-dot with molecular wires is important, and any mismatch can generate midgap states leading to charge recombination and reduced efficiency. Therefore, these exciton-shelves and quantum dots can lead to development of next-generation photovoltaic and photodetection devices using simultaneous transport of bandedge and hot-carriers or energy transport of excitons in these nanostructured solution-processed films.

The diamagnetic susceptibility of a donor in a semiconductor core shell quantum dot

NASA Astrophysics Data System (ADS)

Sudharshan, M. S.; Subhash, P.; Shaik, Nagoor Babu; Kalpana, P.; Jayakumar, K.; Reuben, A. Merwyn Jasper D.

2015-06-01

The effect of Aluminium concentration, shell thickness and size of the core shell Quantum Dot on the Diamagnetic Susceptibility of a donor in the Core Shell Quantum Dot is calculated in the effective mass approximation using the variational method. The results are presented and discussed.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F.

2016-05-16

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

Optical Fiber Sensing Using Quantum Dots

PubMed Central

Jorge, Pedro; Martins, Manuel António; Trindade, Tito; Santos, José Luís; Farahi, Faramarz

2007-01-01

Recent advances in the application of semiconductor nanocrystals, or quantum dots, as biochemical sensors are reviewed. Quantum dots have unique optical properties that make them promising alternatives to traditional dyes in many luminescence based bioanalytical techniques. An overview of the more relevant progresses in the application of quantum dots as biochemical probes is addressed. Special focus will be given to configurations where the sensing dots are incorporated in solid membranes and immobilized in optical fibers or planar waveguide platforms. PMID:28903308

Electrical control of single hole spins in nanowire quantum dots.

PubMed

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Silicon Quantum Dots with Counted Antimony Donor Implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Meenakshi; Pacheco, Jose L.; Perry, Daniel Lee

2015-10-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Synthesis and Characterization of Quantum Dots: A Case Study Using PbS

ERIC Educational Resources Information Center

Pan, Yi; Li, Yue Ru; Zhao, Yu; Akins, Daniel L.

2015-01-01

A research project for senior undergraduates of chemistry has been developed to introduce syntheses of a series of monodispersed semiconductor PbS quantum dots (QDs) and their characterization methodologies. In this paper, we report the preparation of monodispersed semiconductor PbS QDs with sizes smaller than the exciton Bohr radius using a…

Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

PubMed

de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

2017-10-31

Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

Surface Plasmon Enhanced Sensitive Detection for Possible Signature of Majorana Fermions via a Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

PubMed Central

Chen, Hua-Jun; Zhu, Ka-Di

2015-01-01

In the present work, we theoretically propose an optical scheme to detect the possible signature of Majorana fermions via the optical pump-probe spectroscopy, which is very different from the current tunneling measurement based on electrical methods. The scheme consists of a metal nanoparticle and a semiconductor quantum dot coupled to a hybrid semiconductor/superconductor heterostructures. The results show that the probe absorption spectrum of the quantum dot presents a distinct splitting due to the existence of Majorana fermions. Owing to surface plasmon enhanced effect, this splitting will be more obvious, which makes Majorana fermions more easy to be detectable. The technique proposed here open the door for new applications ranging from robust manipulation of Majorana fermions to quantum information processing based on Majorana fermions. PMID:26310929

Demonstration of Quantum Entanglement between a Single Electron Spin Confined to an InAs Quantum Dot and a Photon

NASA Astrophysics Data System (ADS)

Schaibley, J. R.; Burgers, A. P.; McCracken, G. A.; Duan, L.-M.; Berman, P. R.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2013-04-01

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot’s excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×103s-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses

NASA Astrophysics Data System (ADS)

Nagpal, Swati

2002-12-01

Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature.

Thermally activated delayed photoluminescence from pyrenyl-functionalized CdSe quantum dots

NASA Astrophysics Data System (ADS)

Mongin, Cédric; Moroz, Pavel; Zamkov, Mikhail; Castellano, Felix N.

2018-02-01

The generation and transfer of triplet excitons across semiconductor nanomaterial-molecular interfaces will play an important role in emerging photonic and optoelectronic technologies, and understanding the rules that govern such phenomena is essential. The ability to cooperatively merge the photophysical properties of semiconductor quantum dots with those of well-understood and inexpensive molecular chromophores is therefore paramount. Here we show that 1-pyrenecarboxylic acid-functionalized CdSe quantum dots undergo thermally activated delayed photoluminescence. This phenomenon results from a near quantitative triplet-triplet energy transfer from the nanocrystals to 1-pyrenecarboxylic acid, producing a molecular triplet-state 'reservoir' that thermally repopulates the photoluminescent state of CdSe through endothermic reverse triplet-triplet energy transfer. The photoluminescence properties are systematically and predictably tuned through variation of the quantum dot-molecule energy gap, temperature and the triplet-excited-state lifetime of the molecular adsorbate. The concepts developed are likely to be applicable to semiconductor nanocrystals interfaced with molecular chromophores, enabling potential applications of their combined excited states.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

NASA Astrophysics Data System (ADS)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots. A TR-SHG study of these electronically-coupled quantum-dot films reveals temperature-activated cooling of hot charge carriers and coherent excitation of a previously-unidentified surface optical phonon. Finally, I report the first experimental observation of ultrafast electron transfer from the higher excited states of a colloidal quantum dot (PbSe) to delocalized conduction band states of a widely-used electron acceptor (TiO2). The electric field resulting from ultrafast (<50fs) separation of charge carriers across the PbSe/TiO2(110) interface excites coherent vibration of the TiO2 surface atoms, whose collective motions can be followed in real time.

The emission wavelength dependent photoluminescence lifetime of the N-doped graphene quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Xingxia; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210; University of Chinese Academy of Sciences, Beijing 100049

2015-12-14

Aromatic nitrogen doped graphene quantum dots were investigated by steady-state and time-resolved photoluminescence (PL) techniques. The PL lifetime was found to be dependent on the emission wavelength and coincident with the PL spectrum, which is different from most semiconductor quantum dots and fluorescent dyes. This result shows the synergy and competition between the quantum confinement effect and edge functional groups, which may have the potential to guide the synthesis and expand the applications of graphene quantum dots.

Hybrid quantum-classical modeling of quantum dot devices

NASA Astrophysics Data System (ADS)

Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

2017-11-01

The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

Low temperature nano-spin filtering using a diluted magnetic semiconductor core-shell quantum dot

NASA Astrophysics Data System (ADS)

Chattopadhyay, Saikat; Sen, Pratima; Andrews, Joshep Thomas; Sen, Pranay Kumar

2014-07-01

The spin polarized electron transport properties and spin polarized tunneling current have been investigated analytically in a diluted magnetic semiconductor core-shell quantum dot in the presence of applied electric and magnetic fields. Assuming the electron wave function to satisfy WKB approximation, the electron energy eigenvalues have been calculated. The spin polarized tunneling current and the spin dependent tunneling coefficient are obtained by taking into account the exchange interaction and Zeeman splitting. Numerical estimates made for a specific diluted magnetic semiconductor, viz., Zn1-xMnxSe/ZnS core-shell quantum dot establishes the possibility of a nano-spin filter for a particular biasing voltage and applied magnetic field. Influence of applied voltage on spin polarized electron transport has been investigated in a CSQD.

Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids.

PubMed

Talgorn, Elise; Gao, Yunan; Aerts, Michiel; Kunneman, Lucas T; Schins, Juleon M; Savenije, T J; van Huis, Marijn A; van der Zant, Herre S J; Houtepen, Arjan J; Siebbeles, Laurens D A

2011-09-25

Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electron-hole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots.

Charge reconfiguration in arrays of quantum dots

NASA Astrophysics Data System (ADS)

Bayer, Johannes C.; Wagner, Timo; Rugeramigabo, Eddy P.; Haug, Rolf J.

2017-12-01

Semiconductor quantum dots are potential building blocks for scalable qubit architectures. Efficient control over the exchange interaction and the possibility of coherently manipulating electron states are essential ingredients towards this goal. We studied experimentally the shuttling of electrons trapped in serial quantum dot arrays isolated from the reservoirs. The isolation hereby enables a high degree of control over the tunnel couplings between the quantum dots, while electrons can be transferred through the array by gate voltage variations. Model calculations are compared with our experimental results for double, triple, and quadruple quantum dot arrays. We are able to identify all transitions observed in our experiments, including cotunneling transitions between distant quantum dots. The shuttling of individual electrons between quantum dots along chosen paths is demonstrated.

Development of cadmium-free quantum dot for intracellular labelling through electroporation or lipid-calcium-phosphate

NASA Astrophysics Data System (ADS)

Liu, Ying-Feng; Hung, Wei-Ling; Hou, Tzh-Yin; Huang, Hsiu-Ying; Lin, Cheng-An J.

2016-04-01

Traditional fluorescent labelling techniques has severe photo-bleaching problem such as organic dyes and fluorescent protein. Quantum dots made up of traditional semiconductor (CdSe/ZnS) material has sort of biological toxicity. This research has developed novel Cd-free quantum dots divided into semiconductor (Indium phosphide, InP) and noble metal (Gold). Former has lower toxicity compared to traditional quantum dots. Latter consisting of gold (III) chloride (AuCl3) and toluene utilizes sonochemical preparation and different stimulus to regulate fluorescent wavelength. Amphoteric macromolecule surface technology and ligand Exchange in self-Assembled are involved to develop hydrophilic nanomaterials which can regulate the number of grafts per molecule of surface functional groups. Calcium phosphate (CaP) nanoparticle (NP) with an asymmetric lipid bilayer coating technology developed for intracellular delivery and labelling has synthesized Cd-free quantum dots possessing high brightness and multi-fluorescence successfully. Then, polymer coating and ligand exchange transfer to water-soluble materials to produce liposome nanomaterials as fluorescent probes and enhancing medical applications of nanotechnology.

Controlling the Properties of Matter with Quantum Dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klimov, Victor

2017-03-22

Solar cells and photodetectors could soon be made from new types of materials based on semiconductor quantum dots, thanks to new insights based on ultrafast measurements capturing real-time photoconversion processes. Photoconversion is a process wherein the energy of a photon, or quantum of light, is converted into other forms of energy, for example, chemical or electrical. Semiconductor quantum dots are chemically synthesized crystalline nanoparticles that have been studied for more than three decades in the context of various photoconversion schemes including photovoltaics (generation of photo-electricity) and photo-catalysis (generation of “solar fuels”). The appeal of quantum dots comes from the unmatchedmore » tunability of their physical properties, which can be adjusted by controlling the size, shape and composition of the dots. At Los Alamos, the research connects to the institutional mission of solving national security challenges through scientific excellence, in this case focusing on novel physical principles for highly efficient photoconversion, charge manipulation in exploratory device structures and novel nanomaterials.« less

Spin relaxation in semiconductor quantum rings and dots--a comparative study.

PubMed

Zipper, Elżbieta; Kurpas, Marcin; Sadowski, Janusz; Maśka, Maciej M

2011-03-23

We calculate spin relaxation times due to spin-orbit-mediated electron-phonon interactions for experimentally accessible semiconductor quantum ring and dot architectures. We elucidate the differences between the two systems due to different confinement. The estimated relaxation times (at B = 1 T) are in the range between a few milliseconds to a few seconds. This high stability of spin in a quantum ring allows us to test it as a spin qubit. A brief discussion of quantum state manipulations with such a qubit is presented.

Radiation Effects in Nanostructures: Comparison of Proton Irradiation Induced Changes on Quantum Dots and Quantum Wells

NASA Technical Reports Server (NTRS)

Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.

2000-01-01

Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.

Spectroscopic investigations on the interaction of thioacetamide with ZnO quantum dots and application for its fluorescence sensing

NASA Astrophysics Data System (ADS)

Saha, Dipika; Negi, Devendra P. S.

2018-01-01

The purpose of the present work was to develop a method for the sensing of thioacetamide by using spectroscopic techniques. Thioacetamide is a carcinogen and it is important to detect its presence in food-stuffs. Semiconductor quantum dots are frequently employed as sensing probes since their absorption and fluorescence properties are highly sensitive to the interaction with substrates present in the solution. In the present work, the interaction between thioacetamide and ZnO quantum dots has been investigated by using UV-visible, fluorescence and infrared spectroscopy. Besides, dynamic light scattering (DLS) has also been utilized for the interaction studies. UV-visible absorption studies indicated the bonding of the lone pair of sulphur atom of thioacetamide with the surface of the semiconductor. The fluorescence band of the ZnO quantum dots was found to be quenched in the presence of micromolar concentrations of thioacetamide. The quenching was found to follow the Stern-Volmer relationship. The Stern-Volmer constant was evaluated to be 1.20 × 105 M- 1. Infrared spectroscopic measurements indicated the participation of the sbnd NH2 group and the sulphur atom of thioacetamide in bonding with the surface of the ZnO quantum dots. DLS measurements indicated that the surface charge of the semiconductor was shielded by the thioacetamide molecules.

High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.

PubMed

Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana

2014-09-22

A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.

Surface Traps in Colloidal Quantum Dots: A Combined Experimental and Theoretical Perspective.

PubMed

Giansante, Carlo; Infante, Ivan

2017-10-19

Surface traps are ubiquitous to nanoscopic semiconductor materials. Understanding their atomistic origin and manipulating them chemically have capital importance to design defect-free colloidal quantum dots and make a leap forward in the development of efficient optoelectronic devices. Recent advances in computing power established computational chemistry as a powerful tool to describe accurately complex chemical species and nowadays it became conceivable to model colloidal quantum dots with realistic sizes and shapes. In this Perspective, we combine the knowledge gathered in recent experimental findings with the computation of quantum dot electronic structures. We analyze three different systems: namely, CdSe, PbS, and CsPbI 3 as benchmark semiconductor nanocrystals showing how different types of trap states can form at their surface. In addition, we suggest experimental healing of such traps according to their chemical origin and nanocrystal composition.

Lifetimes of the Vibrational States of DNA Molecules in Functionalized Complexes of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Bayramov, F. B.; Poloskin, E. D.; Chernev, A. L.; Toporov, V. V.; Dubina, M. V.; Sprung, C.; Lipsanen, H. K.; Bairamov, B. Kh.

2018-01-01

Results of studying nanocrystalline nc-Si/SiO2 quantum dots (QDs) functionalized by short oligonucleotides show that complexes of isolated crystalline semiconductor QDs are unique objects for detecting the manifestation of new quantum confinement phenomena. It is established that narrow lines observed in high-resolution spectra of inelastic light scattering can be used for determining the characteristic time scale of vibrational excitations of separate nucleotide molecules and for studying structural-dynamic properties of fast oscillatory processes in biomacromolecules.

Growing High-Quality InAs Quantum Dots for Infrared Lasers

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Uhl, David

2004-01-01

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Biocompatible Quantum Dots for Biological Applications

PubMed Central

Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

2011-01-01

Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

Development and Application of Explicitly Correlated Wave Function Based Methods for the Investigation of Optical Properties of Semiconductor Nanomaterials

NASA Astrophysics Data System (ADS)

Elward, Jennifer Mary

Semiconductor nanoparticles, or quantum dots (QDs), are well known to have very unique optical and electronic properties. These properties can be controlled and tailored as a function of several influential factors, including but not limited to the particle size and shape, effect of composition and heterojunction as well as the effect of ligand on the particle surface. This customizable nature leads to extensive experimental and theoretical research on the capabilities of these quantum dots for many application purposes. However, in order to be able to understand and thus further the development of these materials, one must first understand the fundamental interaction within these nanoparticles. In this thesis, I have developed a theoretical method which is called electron-hole explicitly correlated Hartee-Fock (eh-XCHF). It is a variational method for solving the electron-hole Schrodinger equation and has been used in this work to study electron-hole interaction in semiconductor quantum dots. The method was benchmarked with respect to a parabolic quantum dot system, and ground state energy and electron-hole recombination probability were computed. Both of these properties were found to be in good agreement with expected results. Upon successful benchmarking, I have applied the eh-XCHF method to study optical properties of several quantum dot systems including the effect of dot size on exciton binding energy and recombination probability in a CdSe quantum dot, the effect of shape on a CdSe quantum dot, the effect of heterojunction on a CdSe/ZnS quantum dot and the effect of quantum dot-biomolecule interaction within a CdSe-firefly Luciferase protein conjugate system. As metrics for assessing the effect of these influencers on the electron-hole interaction, the exciton binding energy, electron-hole recombination probability and the average electron-hole separation distance have been computed. These excitonic properties have been found to be strongly infuenced by the changing composition of the particle. It has also been found through this work that the explicitly correlated method performs very well when computing these properties as it provides a feasible computational route to compare to both experimental and other theoretical results.

MURI Center for Photonic Quantum Information Systems

DTIC Science & Technology

2009-10-16

conversion; solid- state quantum gates based on quantum dots in semiconductors and on NV centers in diamond; quantum memories using optical storage...of our high-speed quantum cryptography systems, and also by continuing to work on quantum information encoding into transverse spatial modes. 14...make use of cavity QED effects for quantum information processing, the quantum dot needs to be addressed coherently . We have probed the QD-cavity

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems

NASA Astrophysics Data System (ADS)

Hughes, Stephen; Agarwal, Girish S.

2017-02-01

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems.

PubMed

Hughes, Stephen; Agarwal, Girish S

2017-02-10

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

2016-10-01

Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

High-performance semiconductor quantum-dot single-photon sources

NASA Astrophysics Data System (ADS)

Senellart, Pascale; Solomon, Glenn; White, Andrew

2017-11-01

Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

Peptide-coated semiconductor quantum dots and their applications in biological imaging of single molecules in live cells and organisms

NASA Astrophysics Data System (ADS)

Pinaud, Fabien Florent

2007-12-01

A new surface chemistry has been developed for the solubilization and biofunctionalization of inorganic semiconductor nanocrystals fluorescent probes, also known as quantum dots. This chemistry is based on the surface coating of quantum dots with custom-designed polycysteine peptides and yields water-soluble, small, monodispersed and colloidally stable probes that remain bright and photostable in complex biological milieus. This peptide coating strategy was successfully tested on several types of core and core-shell quantum dots emitting from the visible (e.g. CdSe/ZnS) to the NIR spectrum range (e.g. CdTe/CdSe/ZnS). By taking advantage of the versatile physico-chemical properties of peptides, a peptide "toolkit" was designed and employed to impart several biological functions to individual quantum dots and control their biochemical activity at the nanometer scale. These biofunctionalized peptide-coated quantum dots were exploited in very diverse biological applications. Near-infrared emitting quantum dot probes were engineered with optimized blood circulation and biodistribution properties for in vivo animal imaging. Visible emitting quantum dots were used for single molecule tracking of raft-associated GPI-anchored proteins in live cells. This last application revealed the presence of discrete and non-caveolar lipid microdomains capable of impeding free lateral diffusions in the plasma membrane of Hela cells. Imaging and tracking of peptide-coated quantum dots provided the first direct evidence that microdomains having the composition and behavior expected for lipid rafts can induce molecular compartmentalization in the membrane of living cells.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

PubMed

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles

DTIC Science & Technology

2014-11-07

Theoretical studies of spin- photon entangled complementarity”. Mr. Anderson Hayes in physics finished B.S. degree in May 2013 with a capstone thesis entitled...working on “Semiconductor quantum dots and photon entanglement ”. Mr. Quinn Allen Hailes, undergraduate student in physics completed B.S. degree in...great interests for the Department of Defense’s (DoD) photonic applications. Our research focused on developing and characterizing advanced optical

Quantum Dots Based Rad-Hard Computing and Sensors

NASA Technical Reports Server (NTRS)

Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.

2001-01-01

Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.

NREL Senior Research Fellow Honored by The Journal of Physical Chemistry |

Science.gov Websites

and quantum size effects in semiconductors and carrier dynamics in semiconductor quantum dots and using hot carrier effects, size quantization, and superlattice concepts that could, in principle, enable

Surface Traps in Colloidal Quantum Dots: A Combined Experimental and Theoretical Perspective

PubMed Central

2017-01-01

Surface traps are ubiquitous to nanoscopic semiconductor materials. Understanding their atomistic origin and manipulating them chemically have capital importance to design defect-free colloidal quantum dots and make a leap forward in the development of efficient optoelectronic devices. Recent advances in computing power established computational chemistry as a powerful tool to describe accurately complex chemical species and nowadays it became conceivable to model colloidal quantum dots with realistic sizes and shapes. In this Perspective, we combine the knowledge gathered in recent experimental findings with the computation of quantum dot electronic structures. We analyze three different systems: namely, CdSe, PbS, and CsPbI3 as benchmark semiconductor nanocrystals showing how different types of trap states can form at their surface. In addition, we suggest experimental healing of such traps according to their chemical origin and nanocrystal composition. PMID:28972763

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE PAGES

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon; ...

2017-10-16

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

Synthetic Developments of Nontoxic Quantum Dots.

PubMed

Das, Adita; Snee, Preston T

2016-03-03

Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current Application of Quantum Dots (QD) in Cancer Therapy: A Review.

PubMed

Babu, Lavanya Thilak; Paira, Priyankar

2017-01-01

Semiconductor quantum dots proved themselves as efficient fluorescent probes in cancer detection and treatment. Their size, high stability, non-photobleaching and water solubility made them a unique fluorophore in place of conventional organic dyes. Newly emerged theranostic drug delivery system using quantum dots helped us in better understanding of the drug delivery mechanism inside the cells. Surface modified Quantum dots and their applications became wide in bioimaging, immunohistochemistry, tracking intracellular drug and intracellular molecules target. We have highlighted various applications of quantum dots in cancer treatment, drug delivery, flow cytometry, and theranostics. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Quantum memory on a charge qubit in an optical microresonator

NASA Astrophysics Data System (ADS)

Tsukanov, A. V.

2017-10-01

A quantum-memory unit scheme on the base of a semiconductor structure with quantum dots is proposed. The unit includes a microresonator with single and double quantum dots performing frequencyconverter and charge-qubit functions, respectively. The writing process is carried out in several stages and it is controlled by optical fields of the resonator and laser. It is shown that, to achieve high writing probability, it is necessary to use high-Q resonators and to be able to suppress relaxation processes in quantum dots.

Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

2018-06-01

We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

Multi-Excitonic Quantum Dot Molecules

NASA Astrophysics Data System (ADS)

Scheibner, M.; Stinaff, E. A.; Doty, M. F.; Ware, M. E.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

With the ability to create coupled pairs of quantum dots, the next step towards the realization of semiconductor based quantum information processing devices can be taken. However, so far little knowledge has been gained on these artificial molecules. Our photoluminescence experiments on single InAs/GaAs quantum dot molecules provide the systematics of coupled quantum dots by delineating the spectroscopic features of several key charge configurations in such quantum systems, including X, X^+,X^2+, XX, XX^+ (with X being the neutral exciton). We extract general rules which determine the formation of molecular states of coupled quantum dots. These include the fact that quantum dot molecules provide the possibility to realize various spin configurations and to switch the electron hole exchange interaction on and off by shifting charges inside the molecule. This knowledge will be valuable in developing implementations for quantum information processing.

Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

PubMed

Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

2018-03-15

Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

Microbial synthesis of chalcogenide semiconductor nanoparticles: a review.

PubMed

Jacob, Jaya Mary; Lens, Piet N L; Balakrishnan, Raj Mohan

2016-01-01

Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment-friendly synthesis procedures. Microbial factories hold immense potential to achieve this objective. Over the past few years, bacteria, fungi and yeasts have been experimented with as eco-friendly and cost-effective tools for the biosynthesis of semiconductor quantum dots. This review provides a detailed overview about the production of chalcogen-based semiconductor quantum particles using the inherent microbial machinery. © 2015 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.

Tunable Quantum Dot Solids: Impact of Interparticle Interactions on Bulk Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinclair, Michael B.; Fan, Hongyou; Brener, Igal

2015-09-01

QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. Duringmore » the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.« less

Spectroscopic investigations on the interaction of thioacetamide with ZnO quantum dots and application for its fluorescence sensing.

PubMed

Saha, Dipika; Negi, Devendra P S

2018-01-15

The purpose of the present work was to develop a method for the sensing of thioacetamide by using spectroscopic techniques. Thioacetamide is a carcinogen and it is important to detect its presence in food-stuffs. Semiconductor quantum dots are frequently employed as sensing probes since their absorption and fluorescence properties are highly sensitive to the interaction with substrates present in the solution. In the present work, the interaction between thioacetamide and ZnO quantum dots has been investigated by using UV-visible, fluorescence and infrared spectroscopy. Besides, dynamic light scattering (DLS) has also been utilized for the interaction studies. UV-visible absorption studies indicated the bonding of the lone pair of sulphur atom of thioacetamide with the surface of the semiconductor. The fluorescence band of the ZnO quantum dots was found to be quenched in the presence of micromolar concentrations of thioacetamide. The quenching was found to follow the Stern-Volmer relationship. The Stern-Volmer constant was evaluated to be 1.20×10 5 M -1 . Infrared spectroscopic measurements indicated the participation of the NH 2 group and the sulphur atom of thioacetamide in bonding with the surface of the ZnO quantum dots. DLS measurements indicated that the surface charge of the semiconductor was shielded by the thioacetamide molecules. Copyright © 2017 Elsevier B.V. All rights reserved.

Semiconductor quantum dot-sensitized solar cells.

PubMed

Tian, Jianjun; Cao, Guozhong

2013-10-31

Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

Decoherence of spin states induced by Rashba coupling for an electron confined to a semiconductor quantum dot in the presence of a magnetic field

NASA Astrophysics Data System (ADS)

Poszwa, A.

2018-05-01

We investigate quantum decoherence of spin states caused by Rashba spin-orbit (SO) coupling for an electron confined to a planar quantum dot (QD) in the presence of a magnetic field (B). The Schrödinger equation has been solved in a frame of second-order perturbation theory. The relationship between the von Neumann (vN) entropy and the spin polarization is obtained. The relation is explicitly demonstrated for the InSb semiconductor QD.

Senior Research Fellow Wins Major International Science Award | News | NREL

Science.gov Websites

generation (MEG) in semiconductor nanocrystals, also called quantum dots, and recently found efficient MEG in silicon quantum dots. He shares the award with Stefan W. Glunz of the Fraunhofer Institute in Germany

Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

PubMed Central

Usuki, T; Ohshima, T; Sakuma, Y; Kawabe, M; Okada, Y; Takemoto, K; Miyazawa, T; Hirose, S; Nakata, Y; Takatsu, M; Yokoyama, N

2006-01-01

An atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs). Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands.

Size-Dependent Optoelectronic Properties and Controlled Doping of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Engel, Jesse Hart

Given a rapidly developing world, the need exists for inexpensive renewable energy alternatives to help avoid drastic climate change. Photovoltaics have the potential to fill the energy needs of the future, but significant cost decreases are necessary for widespread adoption. Semiconductor nanocrystals, also known as quantum dots, are a nascent technology with long term potential to enable inexpensive and high efficiency photovoltaics. When deposited as a film, quantum dots form unique nanocomposites whose electronic and optical properties can be broadly tuned through manipulation of their individual constituents. The contents of this thesis explore methods to understand and optimize the optoelectronic properties of PbSe quantum dot films for use in photovoltaic applications. Systematic optimization of photovoltaic performance is demonstrated as a function of nanocrystal size, establishing the potential for utilizing extreme quantum confinement to improve device energetics and alignment. Detailed investigations of the mechanisms of electrical transport are performed, revealing that electronic coupling in quantum dot films is significantly less than often assumed based on optical shifts. A method is proposed to employ extended regions of built-in electrical field, through controlled doping, to sidestep issues of poor transport. To this end, treatments with chemical redox agents are found to effect profound and reversible doping within nanocrystal films, sufficient to enable their use as chemical sensors, but lacking the precision required for optoelectronic applications. Finally, a novel doping method employing "redox buffers" is presented to enact precise, stable, and reversible charge-transfer doping in porous semiconductor films. An example of oxidatively doping PbSe quantum dot thin films is presented, and the future potential for redox buffers in photovoltaic applications is examined.

Semiconductor quantum dots as an ideal source of polarization-entangled photon pairs on-demand: a review

NASA Astrophysics Data System (ADS)

Huber, Daniel; Reindl, Marcus; Aberl, Johannes; Rastelli, Armando; Trotta, Rinaldo

2018-07-01

More than 80 years have passed since the first publication on entangled quantum states. Over this period, the concept of spookily interacting quantum states became an emerging field of science. After various experiments proving the existence of such non-classical states, visionary ideas were put forward to exploit entanglement in quantum information science and technology. These novel concepts have not yet come out of the experimental stage, mostly because of the lack of suitable, deterministic sources of entangled quantum states. Among many systems under investigation, semiconductor quantum dots are particularly appealing emitters of on-demand, single polarization-entangled photon pairs. While it was originally believed that quantum dots must exhibit a limited degree of entanglement related to decoherence effects typical of the solid-state, recent studies have invalidated this preconception. We review the relevant experiments which have led to these important discoveries and discuss the remaining challenges for the anticipated quantum technologies.

Electrostatically defined silicon quantum dots with counted antimony donor implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P.

2016-02-08

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Electrostatically defined silicon quantum dots with counted antimony donor implants

NASA Astrophysics Data System (ADS)

Singh, M.; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Luhman, D. R.; Bielejec, E.; Lilly, M. P.; Carroll, M. S.

2016-02-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Growth of group II-VI semiconductor quantum dots with strong quantum confinement and low size dispersion

NASA Astrophysics Data System (ADS)

Pandey, Praveen K.; Sharma, Kriti; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

2003-11-01

CdTe quantum dots embedded in glass matrix are grown using two-step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single-step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two-step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single-step annealed samples. (

Spin-based quantum computation in multielectron quantum dots

NASA Astrophysics Data System (ADS)

Hu, Xuedong; Das Sarma, S.

2001-10-01

In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid-state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single-spin system unless special conditions are satisfied. Our work compellingly demonstrates that a delicate synergy between theory and experiment (between software and hardware) is essential for constructing a quantum computer.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

NASA Astrophysics Data System (ADS)

Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-02-01

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm2 was demonstrated.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

PubMed

Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-02-21

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm 2 was demonstrated.

Andreev molecules in semiconductor nanowire double quantum dots.

PubMed

Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

2017-09-19

Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

Basics for the preparation of quantum dots and their interactions with living cells.

PubMed

Jiang, Xiue; Bai, Jing; Wang, Tiantian

2014-01-01

A study of the interactions between nanoparticles and living cells is invaluable in understanding the nano-biological effect and the mechanism of cellular endocytosis. Here we describe two methods for the preparation of semiconductor quantum dots with different physiochemical properties. Furthermore, we describe how to study the interaction of the two quantum dots with living HeLa cells and red blood cells with confocal microscopy.

Quantum dots and nanoparticles for photodynamic and radiation therapies of cancer

PubMed Central

Juzenas, Petras; Chen, Wei; Sun, Ya-Ping; Coelho, Manuel Alvaro Neto; Generalov, Roman; Generalova, Natalia; Christensen, Ingeborg Lie

2009-01-01

Semiconductor quantum dots and nanoparticles composed of metals, lipids or polymers have emerged with promising applications for early detection and therapy of cancer. Quantum dots with unique optical properties are commonly composed of cadmium contained semiconductors. Cadmium is potentially hazardous, and toxicity of such quantum dots to living cells, and humans, is not yet systematically investigated. Therefore, search for less toxic materials with similar targeting and optical properties is of further interest. Whereas, the investigation of luminescence nanoparticles as light sources for cancer therapy is very interesting. Despite advances in neurosurgery and radiotherapy the prognosis for patients with malignant gliomas has changed little for the last decades. Cancer treatment requires high accuracy in delivering ionizing radiation to reduce toxicity to surrounding tissues. Recently some research has been focused in developing photosensitizing quantum dots for production of radicals upon absorption of visible light. In spite of the fact that visible light is safe, this approach is suitable to treat only superficial tumours. Ionizing radiation (X-rays and gamma rays) penetrate much deeper thus offering a big advantage in treating patients with tumours in internal organs. Such concept of using quantum dots and nanoparticles to yield electrons and radicals in photodynamic and radiation therapies as well their combination is reviewed in this article. PMID:18840487

Quantum Dots in Diagnostics and Detection: Principles and Paradigms

PubMed Central

Pisanic, T. R.; Zhang, Y.; Wang, T. H.

2014-01-01

Quantum dots are semiconductor nanocrystals that exhibit exceptional optical and electrical behaviors not found in their bulk counterparts. Following seminal work in the development of water-soluble quantum dots in the late 1990's, researchers have sought to develop interesting and novel ways of exploiting the extraordinary properties of quantum dots for biomedical applications. Since that time, over 10,000 articles have been published related to the use of quantum dots in biomedicine, many of which regard their use in detection and diagnostic bioassays. This review presents a didactic overview of fundamental physical phenomena associated with quantum dots and paradigm examples of how these phenomena can and have been readily exploited for manifold uses in nanobiotechnology with a specific focus on their implementation in in vitro diagnostic assays and biodetection. PMID:24770716

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

PubMed

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Proceedings for the Alaska Meeting on Fundamental Optical Processes in Semiconductors (AMFOPS 󈧅) Held in Girdwood, Alaska on August 5-10, 2001

DTIC Science & Technology

2002-05-31

Arizona Jagdeep Shah Lucent Technologies Advisory Committee Yasuhiko Arakawa University of Tokyo David Citrin Washington State University Hartmut...the dipole moment of the exciton in the dot. WA2 Fabrication and Optical Properties of Quantum Dots: GaN-Based and InAs Quantum Dots Yasuhiko

Microwave-Driven Coherent Operation of a Semiconductor Quantum Dot Charge Qubit

DTIC Science & Technology

2015-02-16

indicating that understanding high frequency charge noise as well as charge relaxation at the sweet spot will be important for further development. The...Microwave-driven coherent operation of a semiconductor quantum dot charge qubit Dohun Kim,1 D. R. Ward,1 C. B. Simmons,1 John King Gamble,2 Robin...University of Wisconsin-Madison, Madison, WI 53706, USA A most intuitive realization of a qubit is a sin- gle electron charge sitting at two well -defined

Computational models for the berry phase in semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prabhakar, S., E-mail: rmelnik@wlu.ca; Melnik, R. V. N., E-mail: rmelnik@wlu.ca; Sebetci, A.

2014-10-06

By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

Characterization of Strong Light-Matter Coupling in Semiconductor Quantum-Dot Microcavities via Photon-Statistics Spectroscopy

NASA Astrophysics Data System (ADS)

Schneebeli, L.; Kira, M.; Koch, S. W.

2008-08-01

It is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission.

Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Jovanovic, N.; Vandersypen, L. M. K.

2016-07-25

The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots.more » This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.« less

Photon-assisted tunneling in an asymmetrically coupled triple quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bao-Chuan; Cao, Gang, E-mail: gcao@ustc.edu.cn; Chen, Bao-Bao

The gate-defined quantum dot is regarded as one of the basic structures required for scalable semiconductor quantum processors. Here, we demonstrate a structure that contains three quantum dots scaled in series. The electron number of each dot and the tunnel coupling between them can be tuned conveniently using splitting gates. We tune the quantum dot array asymmetrically such that the tunnel coupling between the right dot and the central dot is much larger than that between the left dot and the central dot. When driven by microwaves, the sidebands of the photon-assisted tunneling process appear not only in the left-to-centralmore » dot transition region but also in the left-to-right dot transition region. These sidebands are both attributed to the left-to-central transition for asymmetric coupling. Our result shows that there is a region of a triple quantum dot structure that remains indistinct when studied with a normal two-dimensional charge stability diagram; this will be helpful in future studies of the scalability of quantum dot systems.« less

Interfacing a quantum dot with a spontaneous parametric down-conversion source

NASA Astrophysics Data System (ADS)

Huber, Tobias; Prilmüller, Maximilian; Sehner, Michael; Solomon, Glenn S.; Predojević, Ana; Weihs, Gregor

2017-09-01

Quantum networks require interfacing stationary and flying qubits. These flying qubits are usually nonclassical states of light. Here we consider two of the leading source technologies for nonclassical light, spontaneous parametric down-conversion and single semiconductor quantum dots. Down-conversion delivers high-grade entangled photon pairs, whereas quantum dots excel at producing single photons. We report on an experiment that joins these two technologies and investigates the conditions under which optimal interference between these dissimilar light sources may be achieved.

Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

NASA Astrophysics Data System (ADS)

Lüker, S.; Kuhn, T.; Reiter, D. E.

2017-12-01

Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

Quantum dot-polymer conjugates for stable luminescent displays.

PubMed

Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

2018-05-23

The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

NASA Astrophysics Data System (ADS)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

2013-05-01

We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

Optical Properties of Fluorescent Mixtures: Comparing Quantum Dots to Organic Dyes

ERIC Educational Resources Information Center

Hutchins, Benjamin M.; Morgan, Thomas T.; Ucak-Astarlioglu, Mine G.; Wlilliams, Mary Elizabeth

2007-01-01

The study describes and compares the size-dependent optical properties of organic dyes with those of semiconductor nanocrystals or quantum dots (QDs). The analysis shows that mixtures of QDs contain emission colors that are sum of the individual QD components.

Quantum dot properties in the multiband envelope-function approximation using boundary conditions based upon first-principles quantum calculations

NASA Astrophysics Data System (ADS)

Flory, Curt A.; Musgrave, Charles B.; Zhang, Zhiyong

2008-05-01

A number of physical processes involving quantum dots depend critically upon the “evanescent” electron eigenstate wave function that extends outside of the material surface into the surrounding region. These processes include electron tunneling through quantum dots, as well as interactions between multiple quantum dot structures. In order to unambiguously determine these evanescent fields, appropriate boundary conditions have been developed to connect the electronic solutions interior to the semiconductor quantum dot to exterior vacuum solutions. In standard envelope function theory, the interior wave function consists of products of band edge and envelope functions, and both must be considered when matching to the external solution. While the envelope functions satisfy tractable equations, the band edge functions are generally not known. In this work, symmetry arguments in the spherically symmetric approximation are used in conjunction with the known qualitative behavior of bonding and antibonding orbitals to catalog the behavior of the band edge functions at the unit cell boundary. This physical approximation allows consolidation of the influence of the band edge functions to two simple surface parameters that are incorporated into the boundary conditions and are straightforwardly computed by using numerical first-principles quantum techniques. These new boundary conditions are employed to analyze an isolated spherically symmetric semiconductor quantum dot in vacuum within the analytical model of Sercel and Vahala [Phys. Rev. Lett. 65, 239 (1990); Phys. Rev. B 42, 3690 (1990)]. Results are obtained for quantum dots made of GaAs and InP, which are compared with ab initio calculations that have appeared in the literature.

Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots.

PubMed

Chen, Yan; Zhang, Jiaxiang; Zopf, Michael; Jung, Kyubong; Zhang, Yang; Keil, Robert; Ding, Fei; Schmidt, Oliver G

2016-01-27

Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.

Size dependence in tunneling spectra of PbSe quantum-dot arrays.

PubMed

Ou, Y C; Cheng, S F; Jian, W B

2009-07-15

Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored.

Classical and quantum optical correlation effects between single quantum dots: The role of the hopping photon

NASA Astrophysics Data System (ADS)

Hughes, S.; Gotoh, H.; Kamada, H.

2006-09-01

We present a theoretical study of photon-coupled single quantum dots in a semiconductor. A series of optical effects are demonstrated, including a subradiant dark resonance, superradiance, reversible spontaneous emission decay, and pronounced exciton entanglement. Both classical and quantum optical approaches are presented using a self-consistent formalism that treats real and virtual photon exchange on an equal footing and can account for different quantum dot properties, surface effects, and retardation in the dipole-dipole coupling, all of which are shown to play a non-negligible role.

Resonant Scattering of Surface Plasmon Polaritons by Dressed Quantum Dots

DTIC Science & Technology

2014-06-23

Resonant scattering of surface plasmon polaritons by dressed quantum dots Danhong Huang,1 Michelle Easter,2 Godfrey Gumbs,3 A. A. Maradudin,4 Shawn... polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In con- trast to...induced polarization field, treated as a source term9 arising from photo-excited electrons, allows for a resonant scattering of surface plasmon- polariton

Fluorescent Quantum Dots for Biological Labeling

NASA Technical Reports Server (NTRS)

McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit

2003-01-01

Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.

Shell Filling and Magnetic Anisotropy In A Few Hole Silicon Metal-Oxide-Semiconductor Quantum Dot

NASA Astrophysics Data System (ADS)

Hamilton, Alex; Li., R.; Liles, S. D.; Yang, C. H.; Hudson, F. E.; Veldhorst, M. E.; Dzurak, A. S.

There is growing interest in hole spin states in group IV materials for quantum information applications. The near-absence of nuclear spins in group IV crystals promises long spin coherence times, while the strong spin-orbit interaction of the hole states provides fast electrical spin manipulation methods. However, the level-mixing and magnetic field dependence of the p-orbital hole states is non-trivial in nanostructures, and is not as well understood as for electron systems. In this work, we study the hole states in a gate-defined silicon metal-oxide-semiconductor quantum dot. Using an adjacent charge sensor, we monitor quantum dot orbital level spacing down to the very last hole, and find the standard two-dimensional (2D) circular dot shell filling structure. We can change the shell filling sequence by applying an out-of-plane magnetic field. However, when the field is applied in-plane, the shell filling is not changed. This magnetic field anisotropy suggests that the confined hole states are Ising-like.

Manipulating Nonlinear Emission and Cooperative Effect of CdSe/ZnS Quantum Dots by Coupling to a Silver Nanorod Complex Cavity

PubMed Central

Nan, Fan; Cheng, Zi-Qiang; Wang, Ya-Lan; Zhang, Qing; Zhou, Li; Yang, Zhong-Jian; Zhong, Yu-Ting; Liang, Shan; Xiong, Qihua; Wang, Qu-Quan

2014-01-01

Colloidal semiconductor quantum dots have three-dimensional confined excitons with large optical oscillator strength and gain. The surface plasmons of metallic nanostructures offer an efficient tool to enhance exciton-exciton coupling and excitation energy transfer at appropriate geometric arrangement. Here, we report plasmon-mediated cooperative emissions of approximately one monolayer of ensemble CdSe/ZnS quantum dots coupled with silver nanorod complex cavities at room temperature. Power-dependent spectral shifting, narrowing, modulation, and amplification are demonstrated by adjusting longitudinal surface plasmon resonance of silver nanorods, reflectivity and phase shift of silver nanostructured film, and mode spacing of the complex cavity. The underlying physical mechanism of the nonlinear excitation energy transfer and nonlinear emissions are further investigated and discussed by using time-resolved photoluminescence and finite-difference time-domain numerical simulations. Our results suggest effective strategies to design active plasmonic complex cavities for cooperative emission nanodevices based on semiconductor quantum dots. PMID:24787617

Resonant electronic excitation energy transfer by exchange mechanism in the quantum dot system

NASA Astrophysics Data System (ADS)

Chikalova-Luzina, O. P.; Samosvat, D. M.; Vyatkin, V. M.; Zegrya, G. G.

2017-11-01

A microscopic theory of nonradiative resonance energy transfer between spherical A3B5 semiconductor quantum dots by the exchange mechanism is suggested. The interdot Coulomb interaction is taken into consideration. It is assumed that the quantum dot-donor and the quantum dot-acceptor are made from the same A3B5 compound and are embedded in the matrix of another material that produces potential barriers for electrons and holes. The dependences of the energy transfer rate on the quantum-dot system parameters are found in the frame of the Kane model that provides the most adequate description of the real spectra of A3B5 semiconductors. The analytical treatment is carried out with using the density matrix method, which enabled us to perform an energy transfer analysis both in the weak-interaction approximation and in the strong-interaction approximation. The numerical calculations showed the saturation of the energy transfer rate at the distances between the donor and the acceptor approaching the contact one. The contributions of the exchange and direct Coulomb intractions can be of the same order at the small distances and can have the same value in the saturation range.

Cryptography based on the absorption/emission features of multicolor semiconductor nanocrystal quantum dots.

PubMed

Zhou, Ming; Chang, Shoude; Grover, Chander

2004-06-28

Further to the optical coding based on fluorescent semiconductor quantum dots (QDs), a concept of using mixtures of multiple single-color QDs for creating highly secret cryptograms based on their absorption/emission properties was demonstrated. The key to readout of the optical codes is a group of excitation lights with the predetermined wavelengths programmed in a secret manner. The cryptograms can be printed on the surfaces of different objects such as valuable documents for security purposes.

Model of an Injection Semiconductor Quantum-Dot Laser

NASA Astrophysics Data System (ADS)

Koryukin, I. V.

2018-05-01

We propose an asymmetric electron-hole model of an injection semiconductor quantum-dot laser, which correctly allows for relaxation at transitions between the electron and hole levels. Steady-state solutions of the proposed model, conditions for the simultaneous operation at transitions between the ground and first excited state levels, and relaxation oscillations in the two-wave lasing regime are studied. It is shown that the model can be simplified when the relaxation between hole levels is much faster than the relaxation between electron levels.

Towards Violation of Classical Inequalities using Quantum Dot Resonance Fluorescence

NASA Astrophysics Data System (ADS)

Peiris, Manoj

Self-assembled semiconductor quantum dots have attracted considerable interest recently, ranging from fundamental studies of quantum optics to advanced applications in the field of quantum information science. With their atom-like properties, quantum dot based nanophotonic devices may also substantially contribute to the development of quantum computers. This work presents experimental progress towards the understanding of light-matter interactions that occur beyond well-understood monochromatic resonant light scattering processes in semiconductor quantum dots. First, we report measurements of resonance fluorescence under bichromatic laser excitation. With the inclusion of a second laser, both first-order and second-order correlation functions are substantially altered. Under these conditions, the scattered light exhibits a rich spectrum containing many spectral features that lead to a range of nonlinear multiphoton dynamics. These observations are discussed and compared with a theoretical model. Second, we investigated the light scattered by a quantum dot in the presence of spectral filtering. By scanning the tunable filters placed in front of each detector of a Hanbury-Brown and Twiss setup and recording coincidence measurements, a \\two-photon spectrum" has been experimentally reconstructed for the first time. The two-photon spectrum contains a wealth of information about the cascaded emission involved in the scattering process, such as transitions occurring via virtual intermediate states. Our measurements also reveal that the scattered frequency-filtered light from a quantum dot violates the Cauchy-Schwarz inequality. Finally, Franson-interferometry has been performed using spectrally filtered light from quantum dot resonance fluorescence. Visibilities exceeding the classical limit were demonstrated by using a pair of folded Mach-Zehnder interferometers, paving the way for producing single time-energy entangled photon pairs that could violate Bell's inequalities.

Controlled Quantum Operations of a Semiconductor Three-Qubit System

NASA Astrophysics Data System (ADS)

Li, Hai-Ou; Cao, Gang; Yu, Guo-Dong; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping

2018-02-01

In a specially designed semiconductor device consisting of three capacitively coupled double quantum dots, we achieve strong and tunable coupling between a target qubit and two control qubits. We demonstrate how to completely switch on and off the target qubit's coherent rotations by presetting two control qubits' states. A Toffoli gate is, therefore, possible based on these control effects. This research paves a way for realizing full quantum-logic operations in semiconductor multiqubit systems.

Inkjet printed fluorescent nanorod layers exhibit superior optical performance over quantum dots

NASA Astrophysics Data System (ADS)

Halivni, Shira; Shemesh, Shay; Waiskopf, Nir; Vinetsky, Yelena; Magdassi, Shlomo; Banin, Uri

2015-11-01

Semiconductor nanocrystals exhibit unique fluorescence properties which are tunable in size, shape and composition. The high quantum yield and enhanced stability have led to their use in biomedical imaging and flat panel displays. Here, semiconductor nanorod based inkjet inks are presented, overcoming limitations of the commonly reported quantum dots in printing applications. Fluorescent seeded nanorods were found to be outstanding candidates for fluorescent inks, due to their low particle-particle interactions and negligible self-absorption. This is manifested by insignificant emission shifts upon printing, even in highly concentrated printed layers and by maintenance of a high fluorescence quantum yield, unlike quantum dots which exhibit fluorescence wavelength shifts and quenching effects. This behavior results from the reduced absorption/emission overlap, accompanied by low energy transfer efficiencies between the nanorods as supported by steady state and time resolved fluorescence measurements. The new seeded nanorod inks enable patterning of thin fluorescent layers, for demanding light emission applications such as signage and displays.Semiconductor nanocrystals exhibit unique fluorescence properties which are tunable in size, shape and composition. The high quantum yield and enhanced stability have led to their use in biomedical imaging and flat panel displays. Here, semiconductor nanorod based inkjet inks are presented, overcoming limitations of the commonly reported quantum dots in printing applications. Fluorescent seeded nanorods were found to be outstanding candidates for fluorescent inks, due to their low particle-particle interactions and negligible self-absorption. This is manifested by insignificant emission shifts upon printing, even in highly concentrated printed layers and by maintenance of a high fluorescence quantum yield, unlike quantum dots which exhibit fluorescence wavelength shifts and quenching effects. This behavior results from the reduced absorption/emission overlap, accompanied by low energy transfer efficiencies between the nanorods as supported by steady state and time resolved fluorescence measurements. The new seeded nanorod inks enable patterning of thin fluorescent layers, for demanding light emission applications such as signage and displays. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06248a

Quantum dot bioconjugates for ultrasensitive nonisotopic detection.

PubMed

Chan, W C; Nie, S

1998-09-25

Highly luminescent semiconductor quantum dots (zinc sulfide-capped cadmium selenide) have been covalently coupled to biomolecules for use in ultrasensitive biological detection. In comparison with organic dyes such as rhodamine, this class of luminescent labels is 20 times as bright, 100 times as stable against photobleaching, and one-third as wide in spectral linewidth. These nanometer-sized conjugates are water-soluble and biocompatible. Quantum dots that were labeled with the protein transferrin underwent receptor-mediated endocytosis in cultured HeLa cells, and those dots that were labeled with immunomolecules recognized specific antibodies or antigens.

Infrared Focal Plane Arrays Based on Semiconductor Quantum Dots

DTIC Science & Technology

2002-01-01

an ensemble of self -assembled InAs/GaAs or InAs/InP quantum dots (QDs) are typically in the range of 10-30 monolayers [1]. Here, we report on InAs...photoconductive properties of QDIPs based on self organized InAs quantum dots grown on In.52Al.48As/InP(100), using the MBE technique. Dr. Gendry grew the...composed of 10 layers of self assembled InAs dots, separated by 500 Å thick InAlAs (lattice matched to the semi-insulating InP substrate) barrier

Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

PubMed

Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

2007-06-01

We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

Los Alamos Quantum Dots for Solar, Display Technology

ScienceCinema

Klimov, Victor

2018-05-01

Quantum dots are ultra-small bits of semiconductor matter that can be synthesized with nearly atomic precision via modern methods of colloidal chemistry. Their emission color can be tuned by simply varying their dimensions. Color tunability is combined with high emission efficiencies approaching 100 percent. These properties have recently become the basis of a new technology – quantum dot displays – employed, for example, in the newest generation of e-readers and video monitors.

Intrinsic errors in transporting a single-spin qubit through a double quantum dot

NASA Astrophysics Data System (ADS)

Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.

2017-07-01

Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

NASA Astrophysics Data System (ADS)

Zhao, R.; Rossi, A.; Giblin, S. P.; Fletcher, J. D.; Hudson, F. E.; Möttönen, M.; Kataoka, M.; Dzurak, A. S.

2017-10-01

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of e f within a measurement uncertainty as low as 0.27 ppm.

Two-state semiconductor laser self-mixing velocimetry exploiting coupled quantum-dot emission-states: experiment, simulation and theory

PubMed Central

Gioannini, Mariangela; Dommermuth, Marius; Drzewietzki, Lukas; Krestnikov, Igor; Livshits, Daniil; Krakowski, Michel; Breuer, Stefan

2014-01-01

We exploit the coupled emission-states of a single-chip semiconductor InAs/GaAs quantum-dot laser emitting simultaneously on ground-state (λGS = 1245 nm) and excited-state (λES = 1175 nm) to demonstrate coupled-two-state self-mixing velocimetry for a moving diffuse reflector. A 13 Hz-narrow Doppler beat frequency signal at 317 Hz is obtained for a reflector velocity of 3 mm/s, which exemplifies a 66-fold improvement in width as compared to single-wavelength self-mixing velocimetry. Simulation results reveal the physical origin of this signal, the coupling of excited-state and ground-state photons via the carriers, which is unique for quantum-dot lasers and reproduce the experimental results with excellent agreement. PMID:25321809

Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Dutta, Niloy K.

2018-01-01

We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

Fermionic entanglement via quantum walks in quantum dots

NASA Astrophysics Data System (ADS)

Melnikov, Alexey A.; Fedichkin, Leonid E.

2018-02-01

Quantum walks are fundamentally different from random walks due to the quantum superposition property of quantum objects. Quantum walk process was found to be very useful for quantum information and quantum computation applications. In this paper we demonstrate how to use quantum walks as a tool to generate high-dimensional two-particle fermionic entanglement. The generated entanglement can survive longer in the presence of depolorazing noise due to the periodicity of quantum walk dynamics. The possibility to create two distinguishable qudits in a system of tunnel-coupled semiconductor quantum dots is discussed.

Quantum walks of interacting fermions on a cycle graph

PubMed Central

Melnikov, Alexey A.; Fedichkin, Leonid E.

2016-01-01

Quantum walks have been employed widely to develop new tools for quantum information processing recently. A natural quantum walk dynamics of interacting particles can be used to implement efficiently the universal quantum computation. In this work quantum walks of electrons on a graph are studied. The graph is composed of semiconductor quantum dots arranged in a circle. Electrons can tunnel between adjacent dots and interact via Coulomb repulsion, which leads to entanglement. Fermionic entanglement dynamics is obtained and evaluated. PMID:27681057

Anisotropic exchange interaction induced by a single photon in semiconductor microcavities

NASA Astrophysics Data System (ADS)

Chiappe, G.; Fernández-Rossier, J.; Louis, E.; Anda, E. V.

2005-12-01

We investigate coupling of localized spins in a semiconductor quantum dot embedded in a microcavity. The lowest cavity mode and the quantum dot exciton are coupled and close in energy, forming a polariton. The fermions forming the exciton interact with localized spins via exchange. Exact diagonalization of a Hamiltonian in which photons, spins, and excitons are treated quantum mechanically shows that a single polariton induces a sizable indirect anisotropic exchange interaction between spins. At sufficiently low temperatures strong ferromagnetic correlations show up without an appreciable increase in exciton population. In the case of a (Cd,Mn)Te quantum dot, Mn-Mn ferromagnetic coupling is still significant at 1 K : spin-spin correlation around 3 for exciton occupation smaller than 0.3. We find that the interaction mediated by photon-polaritons is 10 times stronger than the one induced by a classical field for equal Rabi splitting.

Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

PubMed

Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri

2005-08-01

Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.

Recent advances in biocompatible semiconductor nanocrystals for immunobiological applications.

PubMed

Nanda, Sitansu Sekhar; Kim, Min Jik; Kim, Kwangmeyung; Papaefthymiou, Georgia C; Selvan, Subramanian Tamil; Yi, Dong Kee

2017-11-01

Quantum confinement in inorganic semiconductor nanocrystals produces brightly luminescent nanoparticles endowed with unique photo-physical properties, such as tunable optical properties. These have found widespread applications in nanotechnology. The ability to render such nanostructures biocompatible, while maintaining their tunable radiation in the visible range of the electromagnetic spectrum, renders them appropriate for bio-applications. Promising in vitro and in vivo diagnostic applications have been demonstrated, such as fluorescence-based detection of biological interactions, single molecule tracking, multiplexing and immunoassaying. In particular, these fluorescent inorganic semiconductor nanocrystals, generally known as quantum dots, have the potential of remarkable immunobiological applications. This review focuses on the current status of biocompatible quantum dots and their applications in immunobiology - immunosensing, immunofluorescent imaging and immunotherapy. Copyright © 2017 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bishnoi, Dimple

In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate bandmore » setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.« less

Helical quantum states in HgTe quantum dots with inverted band structures.

PubMed

Chang, Kai; Lou, Wen-Kai

2011-05-20

We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.

Determining the exact number of dye molecules attached to colloidal CdSe/ZnS quantum dots in Förster resonant energy transfer assemblies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaiser, Uwe; Jimenez de Aberasturi, Dorleta; Vázquez-González, Margarita

2015-01-14

Semiconductor quantum dots functionalized with organic dye molecules are important tools for biological sensor applications. Energy transfer between the quantum dot and the attached dyes can be utilized for sensing. Though important, the determination of the real number of dye molecules attached per quantum dot is rather difficult. In this work, a method will be presented to determine the number of ATTO-590 dye molecules attached to CdSe/ZnS quantum dots based on time resolved spectral analysis. The energy transfer from the excited quantum dot to the attached ATTO-590 dye leads to a reduced lifetime of the quantum dot's excitons. The highermore » the concentration of dye molecules, the shorter the excitonic lifetime becomes. However, the number of dye molecules attached per quantum dot will vary. Therefore, for correctly explaining the decay of the luminescence upon photoexcitation of the quantum dot, it is necessary to take into account the distribution of the number of dyes attached per quantum dot. A Poisson distribution of the ATTO-590 dye molecules not only leads to excellent agreement between experimental and theoretical decay curves but also additionally yields the average number of dye molecules attached per quantum dot. In this way, the number of dyes per quantum dot can be conveniently determined.« less

Semiconductor nanocrystal quantum dot synthesis approaches towards large-scale industrial production for energy applications

DOE PAGES

Hu, Michael Z.; Zhu, Ting

2015-12-04

This study reviews the experimental synthesis and engineering developments that focused on various green approaches and large-scale process production routes for quantum dots. Fundamental process engineering principles were illustrated. In relation to the small-scale hot injection method, our discussions focus on the non-injection route that could be scaled up with engineering stir-tank reactors. In addition, applications that demand to utilize quantum dots as "commodity" chemicals are discussed, including solar cells and solid-state lightings.

Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

DTIC Science & Technology

2015-03-04

conversion efficiency of InAs quantum dot solar cell by using a single layer anatase TiO2 anti-reflection coating,” R. Vasan, Y. F. Makableh, J. C...dx.doi.org/10.1557//opl.2013.742 9. “The Optimization of InP/ZnS Core/Shell Nanocrystals and TiO2 Nanotubes for Quantum Dot Sensitized Solar Cells ...Quantum Dots Solar Cells Performance,” J. C. Sarker, Y. F. Makableh, R. Vasan, S. Lee, M. O. Manasreh, and M. Benamara, IEEE J. Photovoltaic. (submitted

Downconversion quantum interface for a single quantum dot spin and 1550-nm single-photon channel.

PubMed

Pelc, Jason S; Yu, Leo; De Greve, Kristiaan; McMahon, Peter L; Natarajan, Chandra M; Esfandyarpour, Vahid; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Yamamoto, Yoshihisa; Fejer, M M

2012-12-03

Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. We implement a downconversion quantum interface, where the single photons emitted from a semiconductor quantum dot at 910 nm are downconverted to 1560 nm using a fiber-coupled periodically poled lithium niobate waveguide and a 2.2-μm pulsed pump laser. The single-photon character of the quantum dot emission is preserved during the downconversion process: we measure a cross-correlation g(2)(τ = 0) = 0.17 using resonant excitation of the quantum dot. We show that the downconversion interface is fully compatible with coherent optical control of the quantum dot electron spin through the observation of Rabi oscillations in the downconverted photon counts. These results represent a critical step towards a long-distance hybrid quantum network in which subsystems operating at different wavelengths are connected through quantum frequency conversion devices and 1.5-μm quantum channels.

Semiconductor quantum dots: synthesis and water-solubilization for biomedical applications.

PubMed

Yu, William W

2008-10-01

Quantum dots (QDs) are generally nanosized inorganic particles. They have distinctive size-dependent optical properties due to their very small size (mostly < 10 nm). QDs are regarded as promising new fluorescent materials for biological labeling and imaging because of their superior properties compared with traditional organic molecular dyes. These properties include high quantum efficiency, long-term photostability and very narrow emission but broad absorption spectra. Recent developments in synthesizing high quality semiconductor QDs (mainly metal-chalcogenide compounds) and forming biocompatible structures for biomedical applications are discussed in this paper. This information may facilitate the research to create new materials/technologies for future clinical applications.

Deterministic radiative coupling of two semiconductor quantum dots to the optical mode of a photonic crystal nanocavity.

PubMed

Calic, M; Jarlov, C; Gallo, P; Dwir, B; Rudra, A; Kapon, E

2017-06-22

A system of two site-controlled semiconductor quantum dots (QDs) is deterministically integrated with a photonic crystal membrane nano-cavity. The two QDs are identified via their reproducible emission spectral features, and their coupling to the fundamental cavity mode is established by emission co-polarization and cavity feeding features. A theoretical model accounting for phonon interaction and pure dephasing reproduces the observed results and permits extraction of the light-matter coupling constant for this system. The demonstrated approach offers a platform for scaling up the integration of QD systems and nano-photonic elements for integrated quantum photonics applications.

Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

DOEpatents

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Effect of self assembled quantum dots on carrier mobility, with application to modeling the dark current in quantum dot infrared photodetectors

NASA Astrophysics Data System (ADS)

Youssef, Sarah; El-Batawy, Yasser M.; Abouelsaood, Ahmed A.

2016-09-01

A theoretical method for calculating the electron mobility in quantum dot infrared photodetectors is developed. The mobility calculation is based on a time-dependent, finite-difference solution of the Boltzmann transport equation in a bulk semiconductor material with randomly positioned conical quantum dots. The quantum dots act as scatterers of current carriers (conduction-band electrons in our case), resulting in limiting their mobility. In fact, carrier scattering by quantum dots is typically the dominant factor in determining the mobility in the active region of the quantum dot device. The calculated values of the mobility are used in a recently developed generalized drift-diffusion model for the dark current of the device [Ameen et al., J. Appl. Phys. 115, 063703 (2014)] in order to fix the overall current scale. The results of the model are verified by comparing the predicted dark current characteristics to those experimentally measured and reported for actual InAs/GaAs quantum dot infrared photodetectors. Finally, the effect of the several relevant device parameters, including the operating temperature and the quantum dot average density, is studied.

Resonant electronic excitation energy transfer by Dexter mechanism in the quantum dot system

NASA Astrophysics Data System (ADS)

Samosvat, D. M.; Chikalova-Luzina, O. P.; Vyatkin, V. M.; Zegrya, G. G.

2016-11-01

In present work the energy transfer between quantum dots by the exchange (Dexter) mechanism is analysed. The interdot Coulomb interaction is taken into consideration. It is assumed that the quantum dot-donor and the quantum dot-acceptor are made from the same compound A3B5 and embedded in the matrix of other material creating potential barriers for electron and holes. The dependences of the energy transfer rate on the quantum-dot system parameters are found using the Kane model that provides the most adequate description spectra of semiconductors A3B5. Numerical calculations show that the rate of the energy transfer by Dexter mechanism is comparable to the rate of the energy transfer by electrostatic mechanism at the distances approaching to the contact ones.

Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

2018-02-01

We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

NASA Astrophysics Data System (ADS)

Kotb, Amer

2015-06-01

The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach-Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor ( Q-factor) on signals and QDs-SOAs' parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ˜1 Tb/s.

Effects of increasing number of rings on the ion sensing ability of CdSe quantum dots: a theoretical study

NASA Astrophysics Data System (ADS)

Malik, Pragati; Kakkar, Rita

2018-04-01

A computational study on the structural and electronic properties of a special class of artificial atoms, known as quantum dots, has been carried out. These are semiconductors with unique optical and electronic properties and have been widely used in various applications, such as bio-sensing, bio-imaging, and so on. We have considered quantum dots belonging to II-VI types of semiconductors, due to their wide band gap, possession of large exciton binding energies and unique optical and electronic properties. We have studied their applications as chemical ion sensors by beginning with the study of the ion sensing ability of (CdSe) n ( n = 3, 6, 9 which are in the size range of 0.24, 0.49, 0.74 nm, respectively) quantum dots for cations of the zinc triad, namely Zn2+, Cd2+, Hg2+, and various anions of biological and environmental importance, and studied the effect of increasing number of rings on their ion sensing ability. The various structural, electronic, and optical properties, their interaction energies, and charge transfer on interaction with metal ions and anions have been calculated and reported. Our studies indicate that the CdSe quantum dots can be employed as sensors for both divalent cations and anions, but they can sense cations better than anions.

Time-Resolved Electronic Relaxation Processes in Self-Organized Quantum Dots

DTIC Science & Technology

2005-05-16

in a quantum dot infrared photodetector ,” paper CthM11, presented at CLEO, Baltimore, 2003. K. Kim, T. Norris, J. Singh, P. Bhattacharya...nanostructures have been equally spectacular. Following the development of quantum-well infrared photodetectors in the late 1980’s and early 90’s...4]. The quantum cascade laser is of course the best known of the new devices, as it constitutes an entirely new concept in semiconductor laser

Quantum Metaphotonics

DTIC Science & Technology

2016-03-24

for and success in achieving single quantum dot vacuum Rabi splitting in 2004 (quantum strong coupling, currently 1,354 citations) [6, 7] was...Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity.” Nature 432, 200-203 (2004...7. G. Khitrova, H. M. Gibbs, M. Kira, S. W. Koch, and A. Scherer, “Vacuum Rabi splitting in semiconductors.” Nature Physics 2, 81 (2006). 8. G

Luminescent Quantum Dots as Ultrasensitive Biological Labels

NASA Astrophysics Data System (ADS)

Nie, Shuming

2000-03-01

Highly luminescent semiconductor quantum dots have been covalently coupled to biological molecules for use in ultrasensitive biological detection. This new class of luminescent labels is considerably brighter and more resistant againt photobleaching in comparison with organic dyes. Quantum dots labeled with the protein transferrin undergo receptor-mediated endocytosis (RME) in cultured HeLa cells, and those dots that were conjugated to immunomolecules recognize specific antibodies or antigens. In addition, we show that DNA functionalized quantum dots can be used to target specific genes by hybridization. We expect that quantum dot bioconjugates will have a broad range of biological applications, such as ligand-receptor interactions, real-time monitoring of molecular trafficking inside living cells, multicolor fluorescence in-situ hybridization (FISH), high-sensitivity detection in miniaturized devices (e.g., DNA chips), and fluorescent tagging of combinatorial chemical libraries. A potential clinical application is the use of quantum dots for ultrasensitive viral RNA detection, in which as low as 100 copies of hepatitis C and HIV viruses per ml blood should be detected.

Monte Carlo simulations of quantum dot solar concentrators: ray tracing based on fluorescence mapping

NASA Astrophysics Data System (ADS)

Schuler, A.; Kostro, A.; Huriet, B.; Galande, C.; Scartezzini, J.-L.

2008-08-01

One promising application of semiconductor nanostructures in the field of photovoltaics might be quantum dot solar concentrators. Quantum dot containing nanocomposite thin films are synthesized at EPFL-LESO by a low cost sol-gel process. In order to study the potential of the novel planar photoluminescent concentrators, reliable computer simulations are needed. A computer code for ray tracing simulations of quantum dot solar concentrators has been developed at EPFL-LESO on the basis of Monte Carlo methods that are applied to polarization-dependent reflection/transmission at interfaces, photon absorption by the semiconductor nanocrystals and photoluminescent reemission. The software allows importing measured or theoretical absorption/reemission spectra describing the photoluminescent properties of the quantum dots. Hereby the properties of photoluminescent reemission are described by a set of emission spectra depending on the energy of the incoming photon, allowing to simulate the photoluminescent emission using the inverse function method. By our simulations, the importance of two main factors is revealed, an emission spectrum matched to the spectral efficiency curve of the photovoltaic cell, and a large Stokes shift, which is advantageous for the lateral energy transport. No significant energy losses are implied when the quantum dots are contained within a nanocomposite coating instead of being dispersed in the entire volume of the pane. Together with the knowledge on the optoelectronical properties of suitable photovoltaic cells, the simulations allow to predict the total efficiency of the envisaged concentrating PV systems, and to optimize photoluminescent emission frequencies, optical densities, and pane dimensions.

Ultrafast optical control of individual quantum dot spin qubits.

PubMed

De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

2013-09-01

Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a 'flying' photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin-spin entanglement can be generated if each spin can emit a photon that is entangled with the spin, and these photons are then interfered. We review recent work demonstrating entanglement between a stationary spin qubit and a flying photonic qubit. These experiments utilize the polarization- and frequency-dependent spontaneous emission from the lowest charged exciton state to single spin Zeeman sublevels.

Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basset, J.; Stockklauser, A.; Jarausch, D.-D.

2014-08-11

We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10{sup −5} e/√(Hz). A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10{sup −6} e{sup 2}/Hz above 1 Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope ofmore » the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.« less

Observation of entanglement between a quantum dot spin and a single photon.

PubMed

Gao, W B; Fallahi, P; Togan, E; Miguel-Sanchez, J; Imamoglu, A

2012-11-15

Entanglement has a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, a main challenge is the efficient generation of entanglement between stationary (spin) and propagating (photon) quantum bits. Here we report the observation of quantum entanglement between a semiconductor quantum dot spin and the colour of a propagating optical photon. The demonstration of entanglement relies on the use of fast, single-photon detection, which allows us to project the photon into a superposition of red and blue frequency components. Our results extend the previous demonstrations of single-spin/single-photon entanglement in trapped ions, neutral atoms and nitrogen-vacancy centres to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. As a result of its fast optical transitions and favourable selection rules, the scheme we implement could in principle generate nearly deterministic entangled spin-photon pairs at a rate determined ultimately by the high spontaneous emission rate. Our observation constitutes a first step towards implementation of a quantum network with nodes consisting of semiconductor spin quantum bits.

Fast current blinking in individual PbS and CdSe quantum dots.

PubMed

Maturova, Klara; Nanayakkara, Sanjini U; Luther, Joseph M; van de Lagemaat, Jao

2013-06-12

Fast current intermittency of the tunneling current through single semiconductor quantum dots was observed through time-resolved intermittent contact conductive atomic force microscopy in the dark and under illumination at room temperature. The current through a single dot switches on and off at time scales ranging from microseconds to seconds with power-law distributions for both the on and off times. On states are attributed to the resonant tunneling of charges from the electrically conductive AFM tip to the quantum dot, followed by transfer to the substrate, whereas off states are attributed to a Coulomb blockade effect in the quantum dots that shifts the energy levels out of resonance conditions due to the presence of the trapped charge, while at the same bias. The observation of current intermittency due to Coulomb blockade effects has important implications for the understanding of carrier transport through arrays of quantum dots.

Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldmann, Elias, E-mail: goldmann@itp.uni-bremen.de; Barthel, Stefan; Florian, Matthias

The variation of the excitonic fine-structure splitting is studied for semiconductor quantum dots under the influence of a strain-reducing layer, utilized to shift the emission wavelength of the excitonic transition into the telecom-wavelength regime of 1.3–1.5 μm. By means of a sp{sup 3}s{sup *}-tight-binding model and configuration interaction, we calculate wavelength shifts and fine-structure splittings for various quantum dot geometries. We find the splittings remaining small and even decreasing with strain-reducing layer composition for quantum dots with large height. Combined with an observed increased emission efficiency, the applicability for generation of entanglement photons is persistent.

The ground state magnetic moment and susceptibility of a two electron Gaussian quantum dot

NASA Astrophysics Data System (ADS)

Boda, Aalu; Chatterjee, Ashok

2018-04-01

The problem of two interacting electrons moving in a two-dimensional semiconductor quantum dot with Gaussian confinement under the influence of an external magnetic field is studied by using a method of numerical diagonalization of the Hamiltonian matrix with in the effective-mass approximation. The energy spectrum is calculated as a function of the magnetic field. We find the ground state magnetic moment and the magnetic susceptibility show zero temperature diamagnetic peaks due to exchange induced singlet-triplet oscillations. The position and the number of these peaks depend on the size of the quantum dot and also strength of the electro-electron interaction. The theory is applied to a GaAs quantum dot.

Arthur J. Nozik | NREL

Science.gov Websites

interdisciplinary fields of photoelectrochemistry, semiconductor-molecule interfaces, quantum size effects, electron photoelectrochemistry (hot carrier effects, size quantization effects, superlattice electrodes, quantum dot solar cells

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Self-assembling complexes of quantum dots and scFv antibodies for cancer cell targeting and imaging.

PubMed

Zdobnova, Tatiana A; Stremovskiy, Oleg A; Lebedenko, Ekaterina N; Deyev, Sergey M

2012-01-01

Semiconductor quantum dots represent a novel class of fluorophores with unique physical and chemical properties which could enable a remarkable broadening of the current applications of fluorescent imaging and optical diagnostics. Complexes of quantum dots and antibodies are promising visualising agents for fluorescent detection of selective biomarkers overexpressed in tumor tissues. Here we describe the construction of self-assembling fluorescent complexes of quantum dots and anti-HER1 or anti-HER2/neu scFv antibodies and their interactions with cultured tumor cells. A binding strategy based on a very specific non-covalent interaction between two proteins, barnase and barstar, was used to connect quantum dots and the targeting antibodies. Such a strategy allows combining the targeting and visualization functions simply by varying the corresponding modules of the fluorescent complex.

Self-Assembling Complexes of Quantum Dots and scFv Antibodies for Cancer Cell Targeting and Imaging

PubMed Central

Zdobnova, Tatiana A.; Stremovskiy, Oleg A.; Lebedenko, Ekaterina N.; Deyev, Sergey M.

2012-01-01

Semiconductor quantum dots represent a novel class of fluorophores with unique physical and chemical properties which could enable a remarkable broadening of the current applications of fluorescent imaging and optical diagnostics. Complexes of quantum dots and antibodies are promising visualising agents for fluorescent detection of selective biomarkers overexpressed in tumor tissues. Here we describe the construction of self-assembling fluorescent complexes of quantum dots and anti-HER1 or anti-HER2/neu scFv antibodies and their interactions with cultured tumor cells. A binding strategy based on a very specific non-covalent interaction between two proteins, barnase and barstar, was used to connect quantum dots and the targeting antibodies. Such a strategy allows combining the targeting and visualization functions simply by varying the corresponding modules of the fluorescent complex. PMID:23133578

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

NASA Technical Reports Server (NTRS)

Qiu, Yueming

2006-01-01

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

Single photon sources with single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells

NASA Astrophysics Data System (ADS)

Mansur, Alexandra A. P.; Mansur, Herman S.; Mansur, Rafael L.; de Carvalho, Fernanda G.; Carvalho, Sandhra M.

2018-01-01

Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M = Cd, Pb, Zn, X = S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0 nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine.

InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

NASA Astrophysics Data System (ADS)

Ghanbari, Shirin; Fedorova, Ksenia A.; Krysa, Andrey B.; Rafailov, Edik U.; Major, Arkady

2018-02-01

A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.

Optical Pulse Interactions in Nonlinear Excited State Materials

DTIC Science & Technology

2008-07-14

described below. 2.5 Overview of Semiconductor Quantum Dot A quantum dot (QD) is a quasi -zero-dimensional object where the carrier movement is...a particle of mass M (e.g., an electron) having a potential energy can be described by a wavefunction that satisfies the following Schrödinger...dot (QD) is a quasi -zero-dimensional object where the carrier movement is restricted in three dimensions. The bulk crystalline structure of the

Coherently-enabled environmental control of optics and energy transfer pathways of hybrid quantum dot-metallic nanoparticle systems.

PubMed

Hatef, Ali; Sadeghi, Seyed M; Fortin-Deschênes, Simon; Boulais, Etienne; Meunier, Michel

2013-03-11

It is well-known that optical properties of semiconductor quantum dots can be controlled using optical cavities or near fields of localized surface plasmon resonances (LSPRs) of metallic nanoparticles. In this paper we study the optics, energy transfer pathways, and exciton states of quantum dots when they are influenced by the near fields associated with plasmonic meta-resonances. Such resonances are formed via coherent coupling of excitons and LSPRs when the quantum dots are close to metallic nanorods and driven by a laser beam. Our results suggest an unprecedented sensitivity to the refractive index of the environment, causing significant spectral changes in the Förster resonance energy transfer from the quantum dots to the nanorods and in exciton transition energies. We demonstrate that when a quantum dot-metallic nanorod system is close to its plasmonic meta-resonance, we can adjust the refractive index to: (i) control the frequency range where the energy transfer from the quantum dot to the metallic nanorod is inhibited, (ii) manipulate the exciton transition energy shift of the quantum dot, and (iii) disengage the quantum dot from the metallic nanoparticle and laser field. Our results show that near meta-resonances the spectral forms of energy transfer and exciton energy shifts are strongly correlated to each other.

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots.

PubMed

Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S; Schmidt, Oliver G; Rastelli, Armando; Trotta, Rinaldo

2017-05-26

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

PubMed Central

Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S.; Schmidt, Oliver G.; Rastelli, Armando; Trotta, Rinaldo

2017-01-01

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies. PMID:28548081

Higher-order spin and charge dynamics in a quantum dot-lead hybrid system.

PubMed

Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Stano, Peter; Noiri, Akito; Ito, Takumi; Loss, Daniel; Ludwig, Arne; Wieck, Andreas D; Tarucha, Seigo

2017-09-22

Understanding the dynamics of open quantum systems is important and challenging in basic physics and applications for quantum devices and quantum computing. Semiconductor quantum dots offer a good platform to explore the physics of open quantum systems because we can tune parameters including the coupling to the environment or leads. Here, we apply the fast single-shot measurement techniques from spin qubit experiments to explore the spin and charge dynamics due to tunnel coupling to a lead in a quantum dot-lead hybrid system. We experimentally observe both spin and charge time evolution via first- and second-order tunneling processes, and reveal the dynamics of the spin-flip through the intermediate state. These results enable and stimulate the exploration of spin dynamics in dot-lead hybrid systems, and may offer useful resources for spin manipulation and simulation of open quantum systems.

Modification of quantum dots with nucleic acids

NASA Astrophysics Data System (ADS)

Kocherginskaya, P. B.; Romanova, A. V.; Prokhorenko, I. A.; Itkis, Daniil M.; Korshun, V. A.; Goodilin, Eugene A.; Tretyakov, Yuri D.

2011-12-01

The key principles and modern approaches to targeted modification of semiconductor colloidal nanoparticles, quantum dots, which exhibit unique photophysical properties and are a promising class of luminescent markers, are discussed. Attention is given to the preparation of their bioconjugates with nucleic acids, promising tools for biological microchips and resonance energy transfer sensors. The bibliography includes 80 references.

Emerging technologies for high performance infrared detectors

NASA Astrophysics Data System (ADS)

Tan, Chee Leong; Mohseni, Hooman

2018-01-01

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

Non-blinking quantum dot with a plasmonic nanoshell resonator

NASA Astrophysics Data System (ADS)

Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

2015-02-01

Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

NASA Astrophysics Data System (ADS)

Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo; Gregersen, Niels; Bellet-Amalric, Edith; Nogues, Gilles; Kheng, Kuntheak

2017-11-01

Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA =0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru; Preobrazhenskii, V. V.

2016-11-15

The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancementmore » of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.« less

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

PubMed

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-02-07

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2014-02-01

The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

PubMed

Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

2010-03-29

A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

Strong plasmonic enhancement of biexciton emission: controlled coupling of a single quantum dot to a gold nanocone antenna

DOE PAGES

Matsuzaki, Korenobu; Vassant, Simon; Liu, Hsuan-Wei; ...

2017-02-14

Multiexcitonic transitions and emission of several photons per excitation comprise a very attractive feature of semiconductor quantum dots for optoelectronics applications. However, these higher-order radiative processes are usually quenched in colloidal quantum dots by Auger and other nonradiative decay channels. To increase the multiexcitonic quantum efficiency, several groups have explored plasmonic enhancement, so far with moderate results. By controlled positioning of individual quantum dots in the near field of gold nanocone antennas, we enhance the radiative decay rates of monoexcitons and biexcitons by 109 and 100 folds at quantum efficiencies of 60 and 70%, respectively, in very good agreement withmore » the outcome of numerical calculations. We discuss the implications of our work for future fundamental and applied research in nano-optics.« less

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

NASA Astrophysics Data System (ADS)

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; Lagally, Max G.; Foote, Ryan H.; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.

2016-10-01

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of double quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau-Zener-Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

DOE PAGES

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; ...

2016-10-18

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

2016-07-04

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T{sub o} of 105 K has been extracted.

Strong coupling of a single electron in silicon to a microwave photon

NASA Astrophysics Data System (ADS)

Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

2017-01-01

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

NASA Astrophysics Data System (ADS)

Dey, Anup; Maiti, Biswajit; Chanda Sarkar, Debasree

2014-04-01

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k→) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg1-xCdxTe, and In1-xGaxAsyP1-y lattice matched to InP, as example of III-V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

Synthesis of Bi2S3 quantum dots for sensitized solar cells by reverse SILAR

NASA Astrophysics Data System (ADS)

Singh, Navjot; Sharma, J.; Tripathi, S. K.

2016-05-01

Quantum Dot Sensitized Solar cells (QDSSC) have great potential to replace silicon-based solar cells. Quantum dots of various materials and sizes could be used to convert most of the visible light into the electrical current. This paper put emphasis on the synthesis of Bismuth Sulphide quantum dots and selectivity of the anionic precursor by Successive Ionic Layer Adsorption Reaction (SILAR). Bismuth Sulfide (Bi2S3) (group V - Vi semiconductor) is strong contestant for cadmium free solar cells due to its optimum band gap for light harvesting. Optical, structural and electrical measurements are reported and discussed. Problem regarding the choice of precursor for anion extraction is discussed. Band gap of the synthesized quantum dots is 1.2 eV which does not match with the required energy band gap of bismuth sulfide that is 1.7eV.

Studies of mist deposition for the formation of quantum dot CdSe films

NASA Astrophysics Data System (ADS)

Price, S. C.; Shanmugasundaram, K.; Ramani, S.; Zhu, T.; Zhang, F.; Xu, J.; Mohney, S. E.; Zhang, Q.; Kshirsagar, A.; Ruzyllo, J.

2009-10-01

Films of CdSe(ZnS) colloidal nanocrystalline quantum dots (NQDs) were deposited on bare silicon, glass and polymer coated silicon using mist deposition. This effort is a part of an exploratory investigation in which this deposition technique is studied for the first time as a method to form semiconductor NQD films. The process parameters, including deposition time, solution concentration and electric field, were varied to change the thickness of the deposited film. Blanket films and films deposited through a shadow mask were created to investigate the method's ability to pattern films during the deposition process. The differences between these deposition modes in terms of film morphology were observed. Overall, the results show that mist deposition of quantum dots is a viable method for creating thin, patterned quantum dot films using colloidal solution as the precursor. It is concluded that this technique shows very good promise for quantum dot (light emitting diode, LED) fabrication.

Conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage.

PubMed

Kano, Shinya; Fujii, Minoru

2017-03-03

We study the conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage. Heat leakage current from a hot electrode to a cold electrode is taken into account in the analysis of the harvester operation. Modeling of electrical output indicates that a maximum heat leakage current is not negligible because it is larger than that of the heat current harvested into electrical power. A reduction of heat leakage is required in this energy harvester in order to obtain efficient heat-to-electrical conversion. Multiple energy levels of a quantum dot can increase the output power of the harvester. Heavily doped colloidal semiconductor quantum dots are a possible candidate for a quantum-dot monolayer in the energy harvester to reduce heat leakage, scaling down device size, and increasing electrical output via multiple discrete energy levels.

Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noiri, A.; Yoneda, J.; Nakajima, T.

2016-04-11

Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantummore » dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins.« less

Semiconductor quantum dot scintillation under gamma-ray irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Letant, S E; Wang, T

2006-08-23

We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma-ray irradiation, and compare the energy resolution of the 59 keV line of Americium 241 obtained with our quantum dot-glass nanocomposite material to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon transport models. These results demonstrate the potential of quantum dots for room-temperature gamma-ray detection, which has applications in medical imaging, environmental monitoring, as well asmore » security and defense. Present technology in gamma radiation detection suffers from flexibility and scalability issues. For example, bulk Germanium provides fine energy resolution (0.2% energy resolution at 1.33 MeV) but requires operation at liquid nitrogen temperature. On the other hand, Cadmium-Zinc-Telluride is a good room temperature detector ( 1% at 662 keV) but the size of the crystals that can be grown is limited to a few centimeters in each direction. Finally, the most commonly used scintillator, Sodium Iodide (NaI), can be grown as large crystals but suffers from a lack of energy resolution (7% energy resolution at 662 keV). Recent advancements in nanotechnology6-10 have provided the possibility of controlling materials synthesis at the molecular level. Both morphology and chemical composition can now be manipulated, leading to radically new material properties due to a combination of quantum confinement and surface to volume ratio effects. One of the main consequences of reducing the size of semiconductors down to nanometer dimensions is to increase the energy band gap, leading to visible luminescence, which suggests that these materials could be used as scintillators. The visible band gap of quantum dots would also ensure both efficient photon counting (better coupling with photomultipliers optimized for the visible region), and high photon output (smaller individual photon energy results in more photons produced) at room temperature, which is essential for effective Poisson counting (the energy resolution {Delta}E/E is inversely proportional to the square root of the number of photons collected).« less

PREFACE: Quantum Dot 2010

NASA Astrophysics Data System (ADS)

Taylor, Robert A.

2010-09-01

These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur Zrenner (Paderborn University, Germany) International Programme Committee: Alexander Eychmüller (TU Dresden, Germany) Jonathan Finley (TU Munich, Germany) Dan Gammon (NRL, Washington, USA) Alexander Govorov (Ohio University, USA) Neil Greenham (Cavendish Laboratory, UK) Vladimir Korenev (Ioffe Institute, Russia) Leo Kouwenhoven (TU Delft, Netherlands) Wolfgang Langbein (Cardiff University, UK) Xavier Marie (CNRS Toulouse, France) David Ritchie (Cambridge, UK) Andrew Sachrajda (IMS, Ottawa, Canada) Katerina Soulantica (University of Toulouse, France) Seigo Tarucha (University of Tokyo, Japan) Carlos Tejedor (UAM, Madrid, Spain) Euijoon Yoon (Seoul National University, Korea) Ulrike Woggon (Tu Berlin, Germany) Proceedings edited and compiled by Profesor Robert A Taylor, University of Oxford

Semiconductor Quantum Dots for Biomedicial Applications

PubMed Central

Shao, Lijia; Gao, Yanfang; Yan, Feng

2011-01-01

Semiconductor quantum dots (QDs) are nanometre-scale crystals, which have unique photophysical properties, such as size-dependent optical properties, high fluorescence quantum yields, and excellent stability against photobleaching. These properties enable QDs as the promising optical labels for the biological applications, such as multiplexed analysis of immunocomplexes or DNA hybridization processes, cell sorting and tracing, in vivo imaging and diagnostics in biomedicine. Meanwhile, QDs can be used as labels for the electrochemical detection of DNA or proteins. This article reviews the synthesis and toxicity of QDs and their optical and electrochemical bioanalytical applications. Especially the application of QDs in biomedicine such as delivering, cell targeting and imaging for cancer research, and in vivo photodynamic therapy (PDT) of cancer are briefly discussed. PMID:22247690

Electric field induced optical gain of a hydrogenic impurity in a Cd{sub 0.8}Zn{sub 0.2}Se/ZnSe parabolic quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jasmine, P. Christina Lily; Peter, A. John, E-mail: a.john.peter@gmail.com

The dependence of electric field on the electronic and optical properties is investigated in a Cd{sub 0.8}Zn{sub 0.2}Se/ZnSe quantum dot. The hydrogenic binding energy, in the presence of electric field, is calculated with the spatial confinement effect. The electric field dependent optical gain with the photon energy is found using compact density matrix method. The results show that the electric field has a great influence on the optical properties of II-VI semiconductor quantum dot.

Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices

DTIC Science & Technology

2003-01-01

Kramer Fabrication of hcp-Co nanocrystals via rapid pyrolysis in inverse PS - b - P2VP micelles and thermal annealing Nano Letters In Press ...the figure) and different pump photon energies. a) hν=1.684eV, b ) hν= 1.536eV and c) hν= 1.433eV. All spectra are normalized to the maximum value of...correlation functions of two consecutively emitted photons from a single excited semiconductor quantum dot. We have shown that a 6 a) b ) 0.10 [ML/s] 250 nm 3.0

Synthesis, properties and biomedical applications of carbon-based quantum dots: An updated review.

PubMed

Namdari, Pooria; Negahdari, Babak; Eatemadi, Ali

2017-03-01

Carbon-based quantum dots (CQDs) are a newly developed class of carbon nano-materials that have attracted much interest and attention as promising competitors to already available semiconductor quantum dots owing to their un-comparable and unique properties. In addition, controllability of CQDs unique physiochemical properties is as a result of their surface passivation and functionalization. This is an update article (between 2013 and 2016) on the recent progress, characteristics and synthesis methods of CQDs and different advantages in varieties of applications. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

Solar cells using quantum funnels.

PubMed

Kramer, Illan J; Levina, Larissa; Debnath, Ratan; Zhitomirsky, David; Sargent, Edward H

2011-09-14

Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

NASA Astrophysics Data System (ADS)

Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

2017-03-01

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials.

PubMed

Sadeghi, S M; Wing, W J; Gutha, R R; Capps, L

2017-03-03

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Quantum Confined Semiconductors

DTIC Science & Technology

2015-02-01

diodes [8-10], metamaterials [11-13], and solar cells [14,15]. As a consequence, the optical and electrical stability of colloidal quantum dots...PbS quantum dot solar cells with high fill factor,” ACS Nano, 4 (7), 3743–3752 (2010). [15] Gur, I., Fromer, N. A., Geier, M. L. and Alivisatos, A...P., “Air-stable all-inorganic nanocrystal solar cells processed from solution,” Sci. 310, 462–465 (2005). [16] Dai, Q., Wang, Y. N., Zhang, Y

Field-emission from quantum-dot-in-perovskite solids

PubMed Central

García de Arquer, F. Pelayo; Gong, Xiwen; Sabatini, Randy P.; Liu, Min; Kim, Gi-Hwan; Sutherland, Brandon R.; Voznyy, Oleksandr; Xu, Jixian; Pang, Yuangjie; Hoogland, Sjoerd; Sinton, David; Sargent, Edward

2017-01-01

Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 1012 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission. PMID:28337981

Design strategy for terahertz quantum dot cascade lasers.

PubMed

Burnett, Benjamin A; Williams, Benjamin S

2016-10-31

The development of quantum dot cascade lasers has been proposed as a path to obtain terahertz semiconductor lasers that operate at room temperature. The expected benefit is due to the suppression of nonradiative electron-phonon scattering and reduced dephasing that accompanies discretization of the electronic energy spectrum. We present numerical modeling which predicts that simple scaling of conventional quantum well based designs to the quantum dot regime will likely fail due to electrical instability associated with high-field domain formation. A design strategy adapted for terahertz quantum dot cascade lasers is presented which avoids these problems. Counterintuitively, this involves the resonant depopulation of the laser's upper state with the LO-phonon energy. The strategy is tested theoretically using a density matrix model of transport and gain, which predicts sufficient gain for lasing at stable operating points. Finally, the effect of quantum dot size inhomogeneity on the optical lineshape is explored, suggesting that the design concept is robust to a moderate amount of statistical variation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habercorn, Lasse; Merkl, Jan-Philip; Kloust, Hauke Christian

With the polymer encapsulation of quantum dots via seeded emulsion polymerization we present a powerful tool for the preparation of fluorescent nanoparticles with an extraordinary stability in aqueous solution. The method of the seeded emulsion polymerization allows a straightforward and simple in situ functionalization of the polymer shell under preserving the optical properties of the quantum dots. These requirements are inevitable for the application of semiconductor nanoparticles as markers for biomedical applications. Polymer encapsulated quantum dots have shown only a marginal loss of quantum yields when they were exposed to copper(II)-ions. Under normal conditions the quantum dots were totally quenchedmore » in presence of copper(II)-ions. Furthermore, a broad range of in situ functionalized polymer-coated quantum dots were obtained by addition of functional monomers or surfactants like fluorescent dye molecules, antibodies or specific DNA aptamers. Furthermore the emulsion polymerization can be used to prepare multifunctional hybrid systems, combining different nanoparticles within one construct without any adverse effect of the properties of the starting materials.{sup 1,2}.« less

High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots.

PubMed

Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G

2015-12-01

Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lafuente-Sampietro, A.; CNRS, Institut Néel, F-38000 Grenoble; Institute of Materials Science, University of Tsukuba, 305-8573 Tsukuba

We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Crmore » interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.« less

Coulomb Mediated Hybridization of Excitons in Coupled Quantum Dots.

PubMed

Ardelt, P-L; Gawarecki, K; Müller, K; Waeber, A M; Bechtold, A; Oberhofer, K; Daniels, J M; Klotz, F; Bichler, M; Kuhn, T; Krenner, H J; Machnikowski, P; Finley, J J

2016-02-19

We report Coulomb mediated hybridization of excitonic states in optically active InGaAs quantum dot molecules. By probing the optical response of an individual quantum dot molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single-particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic eight-band k·p calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial semiconductor molecule.

Charge noise in quantum dot qubits: beyond the Markovian approximation.

NASA Astrophysics Data System (ADS)

Yang, Yuan-Chi; Friesen, Mark; Coppersmith, S. N.

Charge noise is a limiting factor in the performance of semiconductor quantum dot qubits, including both spin and charge qubits. In this work, we develop an analytical formalism for treating semiclassical noise beyond the Markovian approximation, which allows us to investigate noise models relevant for quantum dots, such as 1 / f noise. We apply our methods to both charge qubits and quantum dot hybrid qubits, and study the effects of charge noise on single-qubit rotations in these systems. The formalism is also directly applicable to the case of strong microwave driving, for which the rotating wave approximation breaks down. This work was supported in part by ARO (W911NF-12-0607) and ONR (N00014-15-1-0029), and the University of Wisconsin-Madison.

Activation of molecular catalysts using semiconductor quantum dots

DOEpatents

Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

2011-10-04

Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Plasmonic giant quantum dots: Hybrid nanostructures for truly simultaneous optical imaging, photothermal effect and thermometry

DOE PAGES

Karan, Niladri S.; Keller, Aaron M.; Sampat, Siddharth; ...

2015-02-09

Hybrid semiconductor–metal nanoscale constructs are of both fundamental and practical interest. Semiconductor nanocrystals are active emitters of photons when stimulated optically, while the interaction of light with nanosized metal objects results in scattering and ohmic damping due to absorption. In a combined structure, the properties of both components can be realized together. At the same time, metal–semiconductor coupling may intervene to modify absorption and/or emission processes taking place in the semiconductor, resulting in a range of effects from photoluminescence quenching to enhancement. We show here that photostable ‘giant’ quantum dots when placed at the center of an ultrathin gold shellmore » retain their key optical property of bright and blinking-free photoluminescence, while the metal shell imparts efficient photothermal transduction. The latter is despite the highly compact total particle size (40–60 nm “inorganic” diameter and <100 nm hydrodynamic diameter) and the very thin nature of the optically transparent Au shell. Furthermore, the sensitivity of the quantum dot emission to local temperature provides a novel internal thermometer for recording temperature during infrared irradiation-induced photothermal heating.« less

Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

PubMed Central

2012-01-01

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

Strong coupling of a single electron in silicon to a microwave photon.

PubMed

Mi, X; Cady, J V; Zajac, D M; Deelman, P W; Petta, J R

2017-01-13

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots. Copyright © 2017, American Association for the Advancement of Science.

Dynamics of plasmonic field polarization induced by quantum coherence in quantum dot-metallic nanoshell structures.

PubMed

Sadeghi, S M

2014-09-01

When a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle interacts with a laser field, the plasmonic field of the metallic nanoparticle can be normalized by the quantum coherence generated in the quantum dot. In this Letter, we study the states of polarization of such a coherent-plasmonic field and demonstrate how these states can reveal unique aspects of the collective molecular properties of the hybrid system formed via coherent exciton-plasmon coupling. We show that transition between the molecular states of this system can lead to ultrafast polarization dynamics, including sudden reversal of the sense of variations of the plasmonic field and formation of circular and elliptical polarization.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field

PubMed Central

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-01-01

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. PMID:22314357

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

NASA Astrophysics Data System (ADS)

Kuhlmann, Andreas V.; Houel, Julien; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D.; Warburton, Richard J.

2013-07-01

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 107 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Boundary Condition for Modeling Semiconductor Nanostructures

NASA Technical Reports Server (NTRS)

Lee, Seungwon; Oyafuso, Fabiano; von Allmen, Paul; Klimeck, Gerhard

2006-01-01

A recently proposed boundary condition for atomistic computational modeling of semiconductor nanostructures (particularly, quantum dots) is an improved alternative to two prior such boundary conditions. As explained, this boundary condition helps to reduce the amount of computation while maintaining accuracy.

Phonon-wave-induced resonance fluorescence in semiconductor nanostructures: acoustoluminescence in the terahertz range.

PubMed

Ahn, K J; Milde, F; Knorr, A

2007-01-12

Acoustic wave excitation of semiconductor quantum dots generates resonance fluorescence of electronic intersublevel excitations. Our theoretical analysis predicts acoustoluminescence, in particular, a conversion of acoustic into electromagnetic THz waves over a broad spectral range.

Modeling Magnetic Properties in EZTB

NASA Technical Reports Server (NTRS)

Lee, Seungwon; vonAllmen, Paul

2007-01-01

A software module that calculates magnetic properties of a semiconducting material has been written for incorporation into, and execution within, the Easy (Modular) Tight-Binding (EZTB) software infrastructure. [EZTB is designed to model the electronic structures of semiconductor devices ranging from bulk semiconductors, to quantum wells, quantum wires, and quantum dots. EZTB implements an empirical tight-binding mathematical model of the underlying physics.] This module can model the effect of a magnetic field applied along any direction and does not require any adjustment of model parameters. The module has thus far been applied to study the performances of silicon-based quantum computers in the presence of magnetic fields and of miscut angles in quantum wells. The module is expected to assist experimentalists in fabricating a spin qubit in a Si/SiGe quantum dot. This software can be executed in almost any Unix operating system, utilizes parallel computing, can be run as a Web-portal application program. The module has been validated by comparison of its predictions with experimental data available in the literature.

Evolution of entanglement between distinguishable light states.

PubMed

Stevenson, R Mark; Hudson, Andrew J; Bennett, Anthony J; Young, Robert J; Nicoll, Christine A; Ritchie, David A; Shields, Andrew J

2008-10-24

We investigate the evolution of quantum correlations over the lifetime of a multiphoton state. Measurements reveal time-dependent oscillations of the entanglement fidelity for photon pairs created by a single semiconductor quantum dot. The oscillations are attributed to the phase acquired in the intermediate, nondegenerate, exciton-photon state and are consistent with simulations. We conclude that emission of photon pairs by a typical quantum dot with finite polarization splitting is in fact entangled in a time-evolving state, and not classically correlated as previously regarded.

Quantum dots and nanocomposites.

PubMed

Mansur, Herman Sander

2010-01-01

Quantum dots (QDs), also known as semiconducting nanoparticles, are promising zero-dimensional advanced materials because of their nanoscale size and because they can be engineered to suit particular applications such as nonlinear optical devices (NLO), electro-optical devices, and computing applications. QDs can be joined to polymers in order to produce nanocomposites which can be considered a scientific revolution of the 21st century. One of the fastest moving and most exciting interfaces of nanotechnology is the use of QDs in medicine, cell and molecular biology. Recent advances in nanomaterials have produced a new class of markers and probes by conjugating semiconductor QDs with biomolecules that have affinities for binding with selected biological structures. The nanoscale of QDs ensures that they do not scatter light at visible or longer wavelengths, which is important in order to minimize optical losses in practical applications. Moreover, at this scale, quantum confinement and surface effects become very important and therefore manipulation of the dot diameter or modification of its surface allows the properties of the dot to be controlled. Quantum confinement affects the absorption and emission of photons from the dot. Thus, the absorption edge of a material can be tuned by control of the particle size. This paper reviews developments in the myriad of possibilities for the use of semiconductor QDs associated with molecules producing novel hybrid nanocomposite systems for nanomedicine and bioengineering applications.

Competing interactions in semiconductor quantum dots

DOE PAGES

van den Berg, R.; Brandino, G. P.; El Araby, O.; ...

2014-10-14

In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots.

PubMed

Xiu, Faxian; Wang, Yong; Kim, Jiyoung; Hong, Augustin; Tang, Jianshi; Jacob, Ajey P; Zou, Jin; Wang, Kang L

2010-04-01

Electric-field manipulation of ferromagnetism has the potential for developing a new generation of electric devices to resolve the power consumption and variability issues in today's microelectronics industry. Among various dilute magnetic semiconductors (DMSs), group IV elements such as Si and Ge are the ideal material candidates because of their excellent compatibility with the conventional complementary metal-oxide-semiconductor (MOS) technology. Here we report, for the first time, the successful synthesis of self-assembled dilute magnetic Mn(0.05)Ge(0.95) quantum dots with ferromagnetic order above room temperature, and the demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100 K. We found that by applying electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively modulated through the change of hole concentration inside the quantum dots. Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors.

Precise Control of Quantum Confinement in Cesium Lead Halide Perovskite Quantum Dots via Thermodynamic Equilibrium.

PubMed

Dong, Yitong; Qiao, Tian; Kim, Doyun; Parobek, David; Rossi, Daniel; Son, Dong Hee

2018-05-09

Cesium lead halide (CsPbX 3 ) nanocrystals have emerged as a new family of materials that can outperform the existing semiconductor nanocrystals due to their superb optical and charge-transport properties. However, the lack of a robust method for producing quantum dots with controlled size and high ensemble uniformity has been one of the major obstacles in exploring the useful properties of excitons in zero-dimensional nanostructures of CsPbX 3 . Here, we report a new synthesis approach that enables the precise control of the size based on the equilibrium rather than kinetics, producing CsPbX 3 quantum dots nearly free of heterogeneous broadening in their exciton luminescence. The high level of size control and ensemble uniformity achieved here will open the door to harnessing the benefits of excitons in CsPbX 3 quantum dots for photonic and energy-harvesting applications.

Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-11-01

We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

Decoupling the effects of confinement and passivation on semiconductor quantum dots.

PubMed

Rudd, Roya; Hall, Colin; Murphy, Peter J; Reece, Peter J; Charrault, Eric; Evans, Drew

2016-07-20

Semiconductor (SC) quantum dots (QDs) have recently been fabricated by both chemical and plasma techniques for specific absorption and emission of light. Their optical properties are governed by the size of the QD and the chemistry of any passivation at their surface. Here, we decouple the effects of confinement and passivation by utilising DC magnetron sputtering to fabricate SC QDs in a perfluorinated polyether oil. Very high band gaps are observed for fluorinated QDs with increasing levels of quantum confinement (from 4.2 to 4.6 eV for Si, and 2.5 to 3 eV for Ge), with a shift down to 3.4 eV for Si when oxygen is introduced to the passivation layer. In contrast, the fluorinated Si QDs display a constant UV photoluminescence (3.8 eV) irrespective of size. This ability to tune the size and passivation independently opens a new opportunity to extending the use of simple semiconductor QDs.

Quantum Dots for Live Cell and In Vivo Imaging

PubMed Central

Walling, Maureen A; Novak, Jennifer A; Shepard, Jason R. E

2009-01-01

In the past few decades, technology has made immeasurable strides to enable visualization, identification, and quantitation in biological systems. Many of these technological advancements are occurring on the nanometer scale, where multiple scientific disciplines are combining to create new materials with enhanced properties. The integration of inorganic synthetic methods with a size reduction to the nano-scale has lead to the creation of a new class of optical reporters, called quantum dots. These semiconductor quantum dot nanocrystals have emerged as an alternative to organic dyes and fluorescent proteins, and are brighter and more stable against photobleaching than standard fluorescent indicators. Quantum dots have tunable optical properties that have proved useful in a wide range of applications from multiplexed analysis such as DNA detection and cell sorting and tracking, to most recently demonstrating promise for in vivo imaging and diagnostics. This review provides an in-depth discussion of past, present, and future trends in quantum dot use with an emphasis on in vivo imaging and its related applications. PMID:19333416

An integrated approach to realizing high-performance liquid-junction quantum dot sensitized solar cells

PubMed Central

McDaniel, Hunter; Fuke, Nobuhiro; Makarov, Nikolay S.; Pietryga, Jeffrey M.; Klimov, Victor I.

2013-01-01

Solution-processed semiconductor quantum dot solar cells offer a path towards both reduced fabrication cost and higher efficiency enabled by novel processes such as hot-electron extraction and carrier multiplication. Here we use a new class of low-cost, low-toxicity CuInSexS2−x quantum dots to demonstrate sensitized solar cells with certified efficiencies exceeding 5%. Among other material and device design improvements studied, use of a methanol-based polysulfide electrolyte results in a particularly dramatic enhancement in photocurrent and reduced series resistance. Despite the high vapour pressure of methanol, the solar cells are stable for months under ambient conditions, which is much longer than any previously reported quantum dot sensitized solar cell. This study demonstrates the large potential of CuInSexS2−x quantum dots as active materials for the realization of low-cost, robust and efficient photovoltaics as well as a platform for investigating various advanced concepts derived from the unique physics of the nanoscale size regime. PMID:24322379

Above threshold spectral dependence of linewidth enhancement factor, optical duration and linear chirp of quantum dot lasers.

PubMed

Kim, Jimyung; Delfyett, Peter J

2009-12-07

The spectral dependence of the linewidth enhancement factor above threshold is experimentally observed from a quantum dot Fabry-Pérot semiconductor laser. The linewidth enhancement factor is found to be reduced when the quantum dot laser operates approximately 10 nm offset to either side of the gain peak. It becomes significantly reduced on the anti-Stokes side as compared to the Stokes side. It is also found that the temporal duration of the optical pulses generated from quantum dot mode-locked lasers is shorter when the laser operates away from the gain peak. In addition, less linear chirp is impressed on the pulse train generated from the anti-Stokes side whereas the pulses generated from the gain peak and Stokes side possess a large linear chirp. These experimental results imply that enhanced performance characteristics of quantum dot lasers can be achieved by operating on the anti-Stokes side, approximately 10 nm away from the gain peak.

Coherent coupling between a quantum dot and a donor in silicon

DOE PAGES

Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin; ...

2017-10-18

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a 31P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show thatmore » the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.« less

Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Höfer, B.; Zhang, J.; Wildmann, J.; Zallo, E.; Trotta, R.; Ding, F.; Rastelli, A.; Schmidt, O. G.

2017-04-01

Independent tuning of emission energy and decay time of neutral excitons confined in single self-assembled In(Ga)As/GaAs quantum dots is achieved by simultaneously employing vertical electric fields and lateral biaxial strain fields. By locking the emission energy via a closed-loop feedback on the piezoelectric actuator used to control the strain in the quantum dot, we continuously decrease the decay time of an exciton from 1.4 to 0.7 ns. Both perturbations are fully electrically controlled and their combination offers a promising route to engineer the indistinguishability of photons emitted from spatially separated single photon sources.

Influence of the quantum dot geometry on p -shell transitions in differently charged quantum dots

NASA Astrophysics Data System (ADS)

Holtkemper, M.; Reiter, D. E.; Kuhn, T.

2018-02-01

Absorption spectra of neutral, negatively, and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p -shell transitions, including the influence of nearby nominally dark states. Based on the envelope function approximation, we treat the four-band Luttinger theory as well as the direct and short-range exchange Coulomb interactions within a configuration interaction approach. The quantum dot confinement is approximated by an anisotropic harmonic potential. We present a detailed investigation of state mixing and correlations mediated by the individual interactions. Differences and similarities between the differently charged quantum dots are highlighted. Especially large differences between negatively and positively charged quantum dots become evident. We present a visualization of energetic shifts and state mixtures due to changes in size, in-plane asymmetry, and aspect ratio. Thereby we provide a better understanding of the experimentally hard to access question of quantum dot geometry effects. Our findings show a method to determine the in-plane asymmetry from photoluminescence excitation spectra. Furthermore, we supply basic knowledge for tailoring the strength of certain state mixtures or the energetic order of particular excited states via changes of the shape of the quantum dot. Such knowledge builds the basis to find the optimal QD geometry for possible applications and experiments using excited states.

Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Xiao; Wang, Hao; Yi, Qinghua

2015-11-16

Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefitsmore » the future development of optoelectronic nanodevices with new functionalities.« less

Modeling and studying of white light emitting diodes based on CdS/ZnS spherical quantum dots

NASA Astrophysics Data System (ADS)

Hasanirokh, K.; Asgari, A.

2018-07-01

In this paper, we propose a quantum dot (QD) based white light emitting diode (WLED) structure to study theoretically the material gain and quantum efficiency of the system. We consider the spherical QDs with a II-VI semiconductor core (CdS) that covered with a wider band gap semiconductor acting as a shell (ZnS). In order to generate white light spectrum, we use layers with different dot size that can emit blue, green and red colors. The blue emission originating from CdS core combines to green/orange components originating from ZnS shell and creates an efficiency white light emission. To model this device, at first, we solve Schrödinger and Poisson equations self consistently and obtain eigen energies and wave functions. Then, we calculate the optical gain and internal quantum efficiency (IQE) of a CdS/ZnS LED sample. We investigate the structural parameter effects on the optical properties of the WLED. The numerical results show that the gain profile and IQE curves depend strongly on the structural parameters such as dot size, carrier density and volume scaling parameter. The gain profile becomes higher and wider with increasing the core radius while it becomes less and narrower with increasing the shell thickness. Furthermore, it is found that the volume scaling parameter can manage the system quantum efficiency.

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

NASA Astrophysics Data System (ADS)

Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Reynolds, S.; Rafailov, E. U.

2012-08-01

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency ˜1 THz.

Dynamics of Photoexcited State of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Trivedi, Dhara J.

In this thesis, non-adiabatic molecular dynamics (NAMD) of excited states in semiconductor quantum dots are investigated. Nanoscale systems provide important opportunities for theory and computation for research because the experimental tools often provide an incomplete picture of the structure and/or function of nanomaterials, and theory can often fill in missing features crucial in understanding what is being measured. The simulation of NAMD is an indispensable tool for understanding complex ultrafast photoinduced processes such as charge and energy transfer, thermal relaxation, and charge recombination. Based on the state-of-the-art ab initio approaches in both the energy and time domains, the thesis presents a comprehensive discussion of the dynamical processes in quantum dots, ranging from the initial photon absorption to the final emission. We investigate the energy relaxation and transfer rates in pure and surface passivated quantum dots of different sizes. The study establishes the fundamental mechanisms of the electron and hole relaxation processes with and without hole traps. We develop and implement more accurate and efficient methods for NAMD. These methods are advantageous over the traditional ones when one encounters classically forbidden transitions. We also explore the effect of decoherence and non-adiabatic couplings on the dynamics. The results indicate significant influence on the accuracy and related computational cost of the simulated dynamics.

Fluorescent immunolabeling of cancer cells by quantum dots and antibody scFv fragment.

PubMed

Zdobnova, Tatiana A; Dorofeev, Sergey G; Tananaev, Piter N; Vasiliev, Roman B; Balandin, Taras G; Edelweiss, Eveline F; Stremovskiy, Oleg A; Balalaeva, Irina V; Turchin, Ilya V; Lebedenko, Ekaterina N; Zlomanov, Vladimir P; Deyev, Sergey M

2009-01-01

Semiconductor quantum dots (QDs) coupled with cancer-specific targeting ligands are new promising agents for fluorescent visualization of cancer cells. Human epidermal growth factor receptor 2/neu (HER2/neu), overexpressed on the surface of many cancer cells, is an important target for cancer diagnostics. Antibody scFv fragments as a targeting agent for direct delivery of fluorophores offer significant advantages over full-size antibodies due to their small size, lower cross-reactivity, and immunogenicity. We have used quantum dots linked to anti-HER2/neu 4D5 scFv antibody to label HER2/neu-overexpressing live cells. Labeling of target cells was shown to have high brightness, photostability, and specificity. The results indicate that construction based on quantum dots and scFv antibody can be successfully used for cancer cell visualization.

Isotopically enhanced triple-quantum-dot qubit

PubMed Central

Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron; Borselli, Matthew G.; Kiselev, Andrey A.; Fong, Bryan H.; Holabird, Kevin S.; Hazard, Thomas M.; Huang, Biqin; Deelman, Peter W.; Milosavljevic, Ivan; Schmitz, Adele E.; Ross, Richard S.; Gyure, Mark F.; Hunter, Andrew T.

2015-01-01

Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186

Functionalization of Cadmium Selenide Quantum Dots with Poly(ethylene glycol): Ligand Exchange, Surface Coverage, and Dispersion Stability.

PubMed

Wenger, Whitney Nowak; Bates, Frank S; Aydil, Eray S

2017-08-22

Semiconductor quantum dots synthesized using rapid mixing of precursors by injection into a hot solution of solvents and surfactants have surface ligands that sterically stabilize the dispersions in nonpolar solvents. Often, these ligands are exchanged to disperse the quantum dots in polar solvents, but quantitative studies of quantum dot surfaces before and after ligand exchange are scarce. We studied exchanging trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO) ligands on as-synthesized CdSe quantum dots dispersed in hexane with a 2000 g/mol thiolated poly(ethylene glycol) (PEG) polymer. Using infrared spectroscopy we quantify the absolute surface concentration of TOP/TOPO and PEG ligands per unit area before and after ligand exchange. While 50-85% of the TOP/TOPO ligands are removed upon ligand exchange, only a few are replaced with PEG. Surprisingly, the remaining TOP/TOPO ligands outnumber the PEG ligands, but these few PEG ligands are sufficient to disperse the quantum dots in polar solvents such as chloroform, tetrahydrofuran, and water. Moreover, as-synthesized quantum dots once easily dispersed in hexane are no longer dispersible in nonpolar solvents after ligand exchange. A subtle coverage-dependent balance between attractive PEG-solvent interactions and repulsive TOP/TOPO-solvent interactions determines the dispersion stability.

PREFACE: Proceedings of the First Workshop of the EU RT Network `Photon-Mediated Phenomena in Semiconductor Nanostructures' (Gregynog, Wales, UK, 28--31 March 2003)

NASA Astrophysics Data System (ADS)

Ivanov, Alexei L.

2004-09-01

The EU Research Training Network `Photon-Mediated Phenomena in Semiconductor Nanostructures' (HPRN-CT-2002-00298) comprises seven teams from across Europe: Cambridge, Cardiff, Dortmund, Heraklion, Grenoble, Lund and Paderborn (for details see the Network website http://www.astro.cardiff.ac.uk/research/PMPnetwork/index.html). The first workshop of the Network was held at Gregynog Hall, a conference centre in the beautiful countryside of mid-Wales. There were 44 participants who attended the meeting (7 from France, 2 from Japan, 3 from Germany, 1 from Greece, 2 from Russia, 3 from Sweden, 23 from UK and 3 from USA). Of these, 57% were students and young postdoctoral research associates. The talks presented at the meeting were mainly devoted to linear and nonlinear optics of semiconductor nanostructures. Thus the review and research papers included in this special issue of Journal of Physics: Condensed Matter deal with the exciton-mediated optical phenomena in semiconductor quantum wires, quantum wells, planar and spherical microcavities and self-assembled quantum dots. The specific topics covered by the proceedings are exciton-mediated optics, including lasing, of semiconductor quantum wires Bose-Einstein condensation of excitons and microcavity polaritons diffusion, thermalization and photoluminescence of free carriers and excitons in GaAs coupled quantum wells polaritons in semiconductor microcavities exciton-mediated optics of semiconductor photonic dots optical nonlinearities of biexciton waves optics of self-assembled quantum dots photosensitive metal oxides films On the first day of the workshop, a special session on presentation skills, lead by Mike Edmunds, was organized for the young researchers. The meeting concluded with a round-table discussion at which key questions on research, organization and management of the Network were identified and discussed. The second workshop of the Network, organized and chaired by George Kiriakidis, took place at Hersonissos (Crete, Greece) in October 2003. The forthcoming third workshop, organized by Detlef Schikora and Ulrike Woggon, will be held in Paderborn (conference part) and Dortmund (training part) from 4 October 4 through 7 October 2004 (for details visit the Network website). Finally, I would like to thank my colleagues, Celestino Creatore, Nikolay Nikolaev, Lois Smallwood and Andrew Smith, for their help with preparation of the Proceedings.

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot.

PubMed

Song, Xiang-Xiang; Zhang, Zhuo-Zhi; You, Jie; Liu, Di; Li, Hai-Ou; Cao, Gang; Xiao, Ming; Guo, Guo-Ping

2015-11-05

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

PubMed Central

Song, Xiang-Xiang; Zhang, Zhuo-Zhi; You, Jie; Liu, Di; Li, Hai-Ou; Cao, Gang; Xiao, Ming; Guo, Guo-Ping

2015-01-01

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs. PMID:26538164

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

PubMed Central

2006-01-01

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

Spontaneous generation of frequency combs in QD lasers

NASA Astrophysics Data System (ADS)

Columbo, Lorenzo Luigi; Bardella, Paolo; Gioannini, Mariangela

2018-02-01

We report a systematic analysis of the phenomenon of self-generation of optical frequency combs in single section Fabry-Perot Quantum Dot lasers using a Time Domain Travelling Wave model. We show that the carriers grating due to the standing wave pattern (spatial hole burning) peculiar of Quantum Dots laser and the Four Wave Mixing are the key ingredients to explain spontaneous Optical Frequency Combs in these devices. Our results well agree with recent experimental evidences reported in semiconductor lasers based on Quantum Dots and Quantum Dashes active material and pave the way to the development of a simulation tool for the design of these comb laser sources for innovative applications in the field of high-data rate optical communications.

On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar.

PubMed

Ding, Xing; He, Yu; Duan, Z-C; Gregersen, Niels; Chen, M-C; Unsleber, S; Maier, S; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2016-01-15

Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous experiments. Here, by s-shell pulsed resonant excitation of a Purcell-enhanced quantum dot-micropillar system, we deterministically generate resonance fluorescence single photons which, at π pulse excitation, have an extraction efficiency of 66%, single-photon purity of 99.1%, and photon indistinguishability of 98.5%. Such a single-photon source for the first time combines the features of high efficiency and near-perfect levels of purity and indistinguishabilty, and thus opens the way to multiphoton experiments with semiconductor quantum dots.

Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

NASA Astrophysics Data System (ADS)

Gastaldo, Daniele; Conta, Gianluca; Coïsson, Marco; Amato, Giampiero; Tiberto, Paola; Allia, Paolo

2018-05-01

A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled - zero field cooled measurements.

On-demand semiconductor single-photon source with near-unity indistinguishability.

PubMed

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

CNOT sequences for heterogeneous spin qubit architectures in a noisy environment

NASA Astrophysics Data System (ADS)

Ferraro, Elena; Fanciulli, Marco; de Michielis, Marco

Explicit CNOT gate sequences for two-qubits mixed architectures are presented in view of applications for large-scale quantum computation. Different kinds of coded spin qubits are combined allowing indeed the favorable physical properties of each to be employed. The building blocks for such composite systems are qubit architectures based on the electronic spin in electrostatically defined semiconductor quantum dots. They are the single quantum dot spin qubit, the double quantum dot singlet-triplet qubit and the double quantum dot hybrid qubit. The effective Hamiltonian models expressed by only exchange interactions between pair of electrons are exploited in different geometrical configurations. A numerical genetic algorithm that takes into account the realistic physical parameters involved is adopted. Gate operations are addressed by modulating the tunneling barriers and the energy offsets between different couple of quantum dots. Gate infidelities are calculated considering limitations due to unideal control of gate sequence pulses, hyperfine interaction and unwanted charge coupling. Second affiliation: Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Via R. Cozzi, 55, 20126 Milano, Italy.

Quantum teleportation from a propagating photon to a solid-state spin qubit

NASA Astrophysics Data System (ADS)

Gao, W. B.; Fallahi, P.; Togan, E.; Delteil, A.; Chin, Y. S.; Miguel-Sanchez, J.; Imamoğlu, A.

2013-11-01

A quantum interface between a propagating photon used to transmit quantum information and a long-lived qubit used for storage is of central interest in quantum information science. A method for implementing such an interface between dissimilar qubits is quantum teleportation. Here we experimentally demonstrate transfer of quantum information carried by a photon to a semiconductor spin using quantum teleportation. In our experiment, a single photon in a superposition state is generated using resonant excitation of a neutral dot. To teleport this photonic qubit, we generate an entangled spin-photon state in a second dot located 5 m away and interfere the photons from the two dots in a Hong-Ou-Mandel set-up. Thanks to an unprecedented degree of photon-indistinguishability, a coincidence detection at the output of the interferometer heralds successful teleportation, which we verify by measuring the resulting spin state after prolonging its coherence time by optical spin-echo.

Quantum teleportation from a propagating photon to a solid-state spin qubit.

PubMed

Gao, W B; Fallahi, P; Togan, E; Delteil, A; Chin, Y S; Miguel-Sanchez, J; Imamoğlu, A

2013-01-01

A quantum interface between a propagating photon used to transmit quantum information and a long-lived qubit used for storage is of central interest in quantum information science. A method for implementing such an interface between dissimilar qubits is quantum teleportation. Here we experimentally demonstrate transfer of quantum information carried by a photon to a semiconductor spin using quantum teleportation. In our experiment, a single photon in a superposition state is generated using resonant excitation of a neutral dot. To teleport this photonic qubit, we generate an entangled spin-photon state in a second dot located 5 m away and interfere the photons from the two dots in a Hong-Ou-Mandel set-up. Thanks to an unprecedented degree of photon-indistinguishability, a coincidence detection at the output of the interferometer heralds successful teleportation, which we verify by measuring the resulting spin state after prolonging its coherence time by optical spin-echo.

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

PubMed Central

Branny, Artur; Kumar, Santosh; Proux, Raphaël; Gerardot, Brian D

2017-01-01

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions. PMID:28530219

Vacuum-induced coherence in quantum dot systems

NASA Astrophysics Data System (ADS)

Sitek, Anna; Machnikowski, Paweł

2012-11-01

We present a theoretical study of vacuum-induced coherence in a pair of vertically stacked semiconductor quantum dots. The process consists in a coherent excitation transfer from a single-exciton state localized in one dot to a delocalized state in which the exciton occupation gets trapped. We study the influence of the factors characteristic of quantum dot systems (as opposed to natural atoms): energy mismatch, coupling between the single-exciton states localized in different dots, and different and nonparallel dipoles due to sub-band mixing, as well as coupling to phonons. We show that the destructive effect of the energy mismatch can be overcome by an appropriate interplay of the dipole moments and coupling between the dots which allows one to observe the trapping effect even in a structure with technologically realistic energy splitting of the order of milli-electron volts. We also analyze the impact of phonon dynamics on the occupation trapping and show that phonon effects are suppressed in a certain range of system parameters. This analysis shows that the vacuum-induced coherence effect and the associated long-living trapped excitonic population can be achieved in quantum dots.

Fluorescence Stability of Mercaptopropionic Acid Capped Cadmium Telluride Quantum Dots in Various Biochemical Buffers.

PubMed

Borse, Vivek; Kashikar, Adisha; Srivastava, Rohit

2018-04-01

Quantum dots are the semiconductor nanocrystals having unique optical and electronic properties. Quantum dots are category of fluorescent labels utilized for biological tagging, biosensing, bioassays, bioimaging and in vivo imaging as they exhibit very small size, signal brightness, photostability, tuning of light emission range, longer photoluminescence decay time as compared to organic dyes. In this work, we have synthesized and characterized mercaptopropionic acid capped cadmium telluride quantum dots (MPA-CdTe QDs) using hydrothermal method. The study further reports fluorescence intensity stability of quantum dots suspended in different buffers of varying concentration (1-100 mM), stored at various photophysical conditions. Fluorescence intensity values were reduced with increase in buffer concentration. When the samples were stored at room temperature in ambient light condition the quantum dots suspended in different buffers lost the fluorescence intensity after day 15 (except TRIS II). Fluorescence intensity values were found stable for more than 30 days when the samples were stored in dark condition. Samples stored in refrigerator displayed modest fluorescence intensity even after 300 days of storage. Thus, storage of MPA-CdTe QDs in refrigerator may be the suitable choice to maintain its fluorescence stability for longer time for further application.

Semiconductor Quantum Dots for Applications to Advanced Concepts for Solar Photon Conversion to Electricity and Solar Fuels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nozik, Arthur J; Beard, Matthew C

The challenge of photoconversion research is to produce photovoltaic electricity at costs much less than those based on fossil fuels. Novel photoactive semiconductors and molecules of various types and structures are discussed for this purpose.

Plasmonic giant quantum dots: hybrid nanostructures for truly simultaneous optical imaging, photothermal effect and thermometry† †Electronic supplementary information (ESI) available: Further information on Au shelling chemistry and imaging of the Au shell by electron microscopy. Figures and Movie. See DOI: 10.1039/c5sc00020c

PubMed Central

Karan, Niladri S.; Keller, Aaron M.; Sampat, Siddharth; Roslyak, Oleksiy; Arefin, Ayesha; Hanson, Christina J.; Casson, Joanna L.; Desireddy, Anil; Ghosh, Yagnaseni; Piryatinski, Andrei; Iyer, Rashi; Htoon, Han; Malko, Anton V.

2015-01-01

Hybrid semiconductor–metal nanoscale constructs are of both fundamental and practical interest. Semiconductor nanocrystals are active emitters of photons when stimulated optically, while the interaction of light with nanosized metal objects results in scattering and ohmic damping due to absorption. In a combined structure, the properties of both components can be realized together. At the same time, metal–semiconductor coupling may intervene to modify absorption and/or emission processes taking place in the semiconductor, resulting in a range of effects from photoluminescence quenching to enhancement. We show here that photostable ‘giant’ quantum dots when placed at the center of an ultrathin gold shell retain their key optical property of bright and blinking-free photoluminescence, while the metal shell imparts efficient photothermal transduction. The latter is despite the highly compact total particle size (40–60 nm “inorganic” diameter and <100 nm hydrodynamic diameter) and the very thin nature of the optically transparent Au shell. Importantly, the sensitivity of the quantum dot emission to local temperature provides a novel internal thermometer for recording temperature during infrared irradiation-induced photothermal heating. PMID:29163879

Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

DTIC Science & Technology

2011-12-01

communication links using VCSEL arrays [1, 2], medical imaging using super luminescent diodes [3], and tunable lasers capable of remotely sensing...increase the efficiency of solar cells [6, 7, 8], vastly improve photo detector sensitivity [9], and provide optical memory storage densities predicted...semiconductor lasers” Applied Physics B: Lasers and Optics, Volume 90, Number 2, 2008, Pages 339-343. 6. Nozik, A.J. “Quantum dot solar cells

Silicon based quantum dot hybrid qubits

NASA Astrophysics Data System (ADS)

Kim, Dohun

2015-03-01

The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories under contract DE-AC04-94AL85000.

Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

PubMed

Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

2016-07-07

Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

Direct optical state preparation of the dark exciton in a quantum dot

NASA Astrophysics Data System (ADS)

Lüker, S.; Kuhn, T.; Reiter, D. E.

2015-11-01

Because of their weak coupling to the electromagnetic field, dark excitons in semiconductor quantum dots possess extremely long lifetimes, which makes them attractive candidates for quantum information processing. On the other hand, the preparation and manipulation of dark states is challenging, because commonly used optical excitation mechanisms are not applicable. We propose an efficient mechanism for the deterministic preparation of the dark exciton exploiting the application of a tilted magnetic field and the optical excitation with a chirped, i.e., frequency modulated, laser pulse.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a 31P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show thatmore » the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.« less

Effective theory of monolayer TMDC double quantum dots

NASA Astrophysics Data System (ADS)

David, Alessandro; Burkard, Guido; Kormányos, Andor

2018-07-01

Monolayer transition metal dichalcogenides (TMDCs) are promising candidates for quantum technologies, such as spin qubits in quantum dots, because they are truly two-dimensional semiconductors with a direct band gap. In this work, we analyse theoretically the behaviour of a double quantum dot (DQD) system created in the conduction band of these materials, with two electrons in the (1,1) charge configuration. Motivated by recent experimental progress, we consider several scenarios, including different spin–orbit splittings in the two dots and including the case when the valley degeneracy is lifted due to an insulating ferromagnetic substrate. Finally, we discuss in which cases it is possible to reduce the low energy subspace to the lowest Kramers pairs. We find that in this case the low energy model is formally identical to the Heisenberg exchange Hamiltonian, indicating that such Kramers pairs may serve as qubit implementations.

Valley splitting of single-electron Si MOS quantum dots

DOE PAGES

Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; ...

2016-12-19

Here, silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physicsmore » between the two samples is essentially the same.« less

Optical bistability and optical response of an infrared quantum dot hybridized to VO2 nanoparticle

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-08-01

In this work, we theoretically investigate optical bistability and optical response of a hybrid system consisting of semiconductor quantum dot (SQD) coupled with a vanadium dioxide nanoparticle (VO2NP) in the infrared (IR) regime. The VO2 material exists in semiconductor and metallic phases below and above the critical temperature, respectively where the particle optical properties dramatically change during this phase transition. In our calculations a filling fraction factor controls the VO2NP phase transition when the hybrid system interacts with a laser field. We demonstrate that the switch-up threshold for optical bistability is strongly controlled by filling fraction without changing the structure of the hybrid system. Also, it is shown that, the threshold of optical bistability increases when the VO2NP phases changes from semiconductor to metallic phase. The presented results have the potential to be applied in designing optical switching and optical storage.

Designing quantum dots for solotronics.

PubMed

Kobak, J; Smoleński, T; Goryca, M; Papaj, M; Gietka, K; Bogucki, A; Koperski, M; Rousset, J-G; Suffczyński, J; Janik, E; Nawrocki, M; Golnik, A; Kossacki, P; Pacuski, W

2014-01-01

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory.

Designing quantum dots for solotronics

PubMed Central

Kobak, J.; Smoleński, T.; Goryca, M.; Papaj, M.; Gietka, K.; Bogucki, A.; Koperski, M.; Rousset, J.-G.; Suffczyński, J.; Janik, E.; Nawrocki, M.; Golnik, A.; Kossacki, P.; Pacuski, W.

2014-01-01

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory. PMID:24463946

Extracellular biosynthesis of CdTe quantum dots by the fungus Fusarium oxysporum and their anti-bacterial activity

NASA Astrophysics Data System (ADS)

Syed, Asad; Ahmad, Absar

2013-04-01

The growing demand for semiconductor [quantum dots (Q-dots)] nanoparticles has fuelled significant research in developing strategies for their synthesis and characterization. They are extensively investigated by the chemical route; on the other hand, use of microbial sources for biosynthesis witnessed the highly stable, water dispersible nanoparticles formation. Here we report, for the first time, an efficient fungal-mediated synthesis of highly fluorescent CdTe quantum dots at ambient conditions by the fungus Fusarium oxysporum when reacted with a mixture of CdCl2 and TeCl4. Characterization of these biosynthesized nanoparticles was carried out by different techniques such as Ultraviolet-visible (UV-Vis) spectroscopy, Photoluminescence (PL), X-ray Diffraction (XRD), X-ray Photoelectron spectroscopy (XPS), Transmission Electron Microscopy (TEM) and Fourier Transformed Infrared Spectroscopy (FTIR) analysis. CdTe nanoparticles shows antibacterial activity against Gram positive and Gram negative bacteria. The fungal based fabrication provides an economical, green chemistry approach for production of highly fluorescent CdTe quantum dots.

Evaporation-Induced Assembly of Quantum Dots into Nanorings

PubMed Central

Chen, Jixin; Liao, Wei-Ssu; Chen, Xin; Yang, Tinglu; Wark, Stacey E.; Son, Dong Hee; Batteas, James D.; Cremer, Paul S.

2011-01-01

Herein, we demonstrate the controlled formation of two-dimensional periodic arrays of ring-shaped nanostructures assembled from CdSe semiconductor quantum dots (QDs). The patterns were fabricated by using an evaporative templating method. This involves the introduction of an aqueous solution containing both quantum dots and polystyrene microspheres onto the surface of a planar hydrophilic glass substrate. The quantum dots became confined to the meniscus of the microspheres during evaporation, which drove ring assembly via capillary forces at the polystyrene sphere/glass substrate interface. The geometric parameters for nanoring formation could be controlled by tuning the size of the microspheres and the concentration of the QDs employed. This allowed hexagonal arrays of nanorings to be formed with thicknesses ranging from single dot necklaces to thick multilayer structures over surface areas of many square millimeters. Moreover, the diameter of the ring structures could be simultaneously controlled. A simple model was employed to explain the forces involved in the formation of nanoparticle nanorings. PMID:19206264

Suppression of quantum decoherence via infrared-driven coherent exciton-plasmon coupling: Undamped field and Rabi oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadeghi, S. M., E-mail: seyed.sadeghi@uah.edu; Nano and Micro Device Center, University of Alabama in Huntsville, Huntsville, Alabama 35899; Patty, K. D.

2014-02-24

We show that when a semiconductor quantum dot is in the vicinity of a metallic nanoparticle and driven by a mid-infrared laser field, its coherent dynamics caused by interaction with a visible laser field can become free of quantum decoherence. We demonstrate that this process, which can offer undamped Rabi and field oscillations, is the result of coherent normalization of the “effective” polarization dephasing time of the quantum dot (T{sub 2}{sup *}). This process indicates formation of infrared-induced coherently forced oscillations, which allows us to control the value of T{sub 2}{sup *} using the infrared laser. The results offer decay-freemore » ultrafast modulation of the effective field experienced by the quantum dot when neither the visible laser field nor the infrared laser changes with time.« less

Ga metal nanoparticle-GaAs quantum molecule complexes for Terahertz generation.

PubMed

Bietti, Sergio; Basso Basset, Francesco; Scarpellini, David; Fedorov, Alexey; Ballabio, Andrea; Esposito, Luca; Elborg, Martin; Kuroda, Takashi; Nemcsics, Akos; Toth, Lajos; Manzoni, Cristian; Vozzi, Caterina; Sanguinetti, Stefano

2018-06-18

A hybrid metal-semiconductor nanosystem for the generation of THz radiation, based on the fabrication of GaAs quantum molecules-Ga metal nanoparticles complexes through a self assembly approach, is proposed. The role of the growth parameters, the substrate temperature, the Ga and As flux during the quantum dot molecule fabrication and the metal nanoparticle alignment is discussed. The tuning of the relative positioning of quantum dot molecules and metal nanoparticles is obtained through the careful control of Ga droplet nucleation sites via Ga surface diffusion. The electronic structure of a typical quantum dot molecule was evaluated on the base of the morphological characterizations performed by Atomic Force Microscopy and cross sectional Scanning Electron Microscopy, and the predicted results confirmed by micro-photoluminescence experiments, showing that the Ga metal nanoparticle-GaAs quantum molecule complexes are suitable for terahertz generation from intraband transition. . © 2018 IOP Publishing Ltd.

The effect of nanoparticle degradation on amphiphilic polymer-coated quantum dot toxicity: the importance of particle functionality assessment in toxicology [corrected].

PubMed

Soenen, Stefaan J; Montenegro, José-Maria; Abdelmonem, Abuelmagd M; Manshian, Bella B; Doak, Shareen H; Parak, Wolfgang J; De Smedt, Stefaan C; Braeckmans, Kevin

2014-02-01

Colloidal semiconductor nanoparticles (quantum dots) have attracted a lot of interest in technological and biomedical research, given their potent fluorescent properties. However, the use of heavy-metal-containing nanoparticles remains an issue of debate. The possible toxic effects of quantum dots remain a hot research topic and several questions such as possible intracellular degradation of quantum dots and the effect thereof on both cell viability and particle functionality remain unresolved. In the present work, amphiphilic polymer [corrected] coated CdSe/ZnS quantum dots were synthesized and characterized, after which their effects on cultured cells were evaluated using a multiparametric setup. The data reveal that the quantum dots are taken up through endocytosis and when exposed to the low pH of the endosomal structures, they partially degrade and release cadmium ions, which lowers their fluorescence intensity and augments particle toxicity. Using the multiparametric method, the quantum dots were evaluated at non-toxic doses in terms of their ability to visualize labeled cells for longer time periods. The data revealed that comparing different particles in terms of their applied dose is challenging, likely due to difficulties in obtaining accurate nanoparticle concentrations, but evaluating particle toxicity in terms of their biological functionality enables an easy and straightforward comparison. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Fast Single-Shot Hold Spin Readout in Double Quantum Dots

NASA Astrophysics Data System (ADS)

Bogan, Alexander; Studenikin, Sergei; Korkusinski, Marek; Aers, Geof; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andy; Tracy, Lisa; Reno, John; Hargett, Terry

Solid state spin qubits in quantum dots hold promise as scalable, high-density qubits in quantum information processing architectures. While much of the experimental investigation of these devices and their physics has focused on confined electron spins, hole spins in III-V semiconductors are attractive alternatives to electrons due to the reduced hyperfine coupling between the spin and the incoherent nuclear environment. In this talk, we will discuss a measurement protocol of the hole spin relaxation time T1 in a gated lateral GaAs double quantum dot tuned to the one and two-hole regimes, as well as a new technique for single-shot projective measurement of a single spin in tens of nanoseconds or less. The technique makes use of fast non-spin-conserving inter-dot transitions permitted by strong spin-orbit interactions for holes, as well as the latching of the charge state of the second quantum dot for enhanced sensitivity. This technique allows a direct measurement of the single spin relaxation time on time-scales set by physical device rather than by limitations of the measurement circuit.

White/blue-emitting, water-dispersible CdSe quantum dots prepared by counter ion-induced polymer collapse

NASA Astrophysics Data System (ADS)

Wang, Jing; Goh, Jane Betty; Goh, M. Cynthia; Giri, Neeraj Kumar; Paige, Matthew F.

2015-09-01

The synthesis and characterization of water-dispersible, luminescent CdSe/ZnS semiconductor quantum dots that exhibit nominal "white" fluorescence emission and have potential applications in solid-state lighting is described. The nanomaterials, prepared through counter ion-induced collapse and UV cross-linking of high-molecular weight polyacrylic acid in the presence of appropriate aqueous inorganic ions, were of ∼2-3 nm diameter and could be prepared in gram quantities. The quantum dots exhibited strong luminescence emission in two bands, the first in the blue-region (band edge) of the optical spectrum and the second, a broad emission in the red-region (attributed to deep trap states) of the optical spectrum. Because of the relative strength of emission of the band edge and deep trap state luminescence, it was possible to achieve visible white luminescence from the quantum dots in aqueous solution and in dried, solid films. The optical spectroscopic properties of the nanomaterials, including ensemble and single-molecule spectroscopy, was performed, with results compared to other white-emitting quantum dot systems described previously in the literature.

Molecular profiling of single cancer cells and clinical tissue specimens with semiconductor quantum dots

PubMed Central

Xing, Yun; Smith, Andrew M; Agrawal, Amit; Ruan, Gang; Nie, Shuming

2006-01-01

Semiconductor quantum dots (QDs) are a new class of fluorescent labels with broad applications in biomedical imaging, disease diagnostics, and molecular and cell biology. In comparison with organic dyes and fluorescent proteins, quantum dots have unique optical and electronic properties such as size-tunable light emission, improved signal brightness, resistance against photobleaching, and simultaneous excitation of multiple fluorescence colors. Recent advances have led to multifunctional nanoparticle probes that are highly bright and stable under complex in vitro and in vivo conditions. New designs involve encapsulating luminescent QDs with amphiphilic block copolymers, and linking the polymer coating to tumor-targeting ligands and drug-delivery functionalities. These improved QDs have opened new possibilities for real-time imaging and tracking of molecular targets in living cells, for multiplexed analysis of biomolecular markers in clinical tissue specimens, and for ultrasensitive imaging of malignant tumors in living animal models. In this article, we briefly discuss recent developments in bioaffinity QD probes and their applications in molecular profiling of individual cancer cells and clinical tissue specimens. PMID:17722280

Optical response of hybrid semiconductor quantum dot-metal nanoparticle system: Beyond the dipole approximation

NASA Astrophysics Data System (ADS)

Mohammadzadeh, Atefeh; Miri, MirFaez

2018-01-01

We study the response of a semiconductor quantum dot-metal nanoparticle system to an external field E 0 cos ( ω t ) . The borders between Fano, double peaks, weak transition, strong transition, and bistability regions of the phase diagram move considerably as one regards the multipole effects. The exciton-induced transparency is an artifact of the dipole approximation. The absorption of the nanoparticle, the population inversion of the quantum dot, the upper and lower limits of intensity where bistability occurs, the characteristic time to reach the steady state, and other features of the hybrid system change due to the multipole effects. The phase diagrams corresponding to the fields parallel and perpendicular to the axis of system are quite distinguishable. Thus, both the intensity and the polarization of the incident field can be used to control the system. In particular, the incident polarization can be used to switch on and switch off the bistable behavior. For applications such as miniaturized bistable devices and nanosensors sensitive to variations of the dielectric constant of the surrounding medium, multipole effects must be considered.

Coherent electron{endash}hole correlations in quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joensson, L.; Steiner, M.M.; Wilkins, J.W.

1997-03-01

Using numerical time propagation of the electron{endash}hole wave function, we demonstrate how various coherent correlation effects can be observed by laser excitation of a nanoscale semiconductor quantum dot. The lowest-lying states of an electron{endash}hole pair, when appropriately excited by a laser pulse, give rise to charge oscillations that are manifested by beatings in the optical or intraband polarizations. A GaAs 5{times}25{times}25 nm{sup 3} dot in the effective-mass approximation, including the screened Coulomb interaction between the electron and a heavy or light hole, is simulated. {copyright} {ital 1997 American Institute of Physics.}

Electric Field Controlled Spin Interference in a System with Rashba Spin-Orbit Coupling

DTIC Science & Technology

2016-08-29

conducting semi-circular channels. The strength of the confinement energy on the quantum dots is tuned by gate potentials that allow “ leakage ” of electrons...interesting applications. A detectable SO effect requires a strong electric field (as well as a semiconductor host for the electrons that satisfies a...quantum dots (which may be considered identical) are confined by an electrostatically created potential that can be tuned to allow “ leakage ” of

Ultra-broad band, low power, highly efficient coherent wavelength conversion in quantum dot SOA.

PubMed

Contestabile, G; Yoshida, Y; Maruta, A; Kitayama, K

2012-12-03

We report broadband, all-optical wavelength conversion over 100 nm span, in full S- and C-band, with positive conversion efficiency with low optical input power exploiting dual pump Four-Wave-Mixing in a Quantum Dot Semiconductor Optical Amplifier (QD-SOA). We also demonstrate by Error Vector Magnitude analysis the full transparency of the conversion scheme for coherent modulation formats (QPSK, 8-PSK, 16-QAM, OFDM-16QAM) in the whole C-band.

Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits

DTIC Science & Technology

2009-04-29

bulk material and matches that in quantum wells. While these simple linear relationships hold for spin-polarized light-emitting diodes (spin-LEDs...temperature. The quantum efficiency and hence r| increases with decreasing temperature. The individual circuit elements, 33 therefore, exhibit the...Injection, Threshold Reduction and Output Circular Polarization Modulation in Quantum Well and Quantum Dot Semiconductor Spin Polarized Lasers working

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

PubMed Central

Etgar, Lioz

2013-01-01

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered. PMID:28809318

Microwave-assisted synthesis of C-doped TiO2 and ZnO hybrid nanostructured materials as quantum-dots sensitized solar cells

NASA Astrophysics Data System (ADS)

Rangel-Mendez, Jose R.; Matos, Juan; Cházaro-Ruiz, Luis F.; González-Castillo, Ana C.; Barrios-Yáñez, Guillermo

2018-03-01

The microwave-assisted solvothermal synthesis of C-doped TiO2 and ZnO hybrid materials was performed. Saccharose, titanium isopropoxide and zinc acetate were used as organic and inorganic sources for the synthesis. The influence of temperature and reaction time on the textural and optoelectronic properties of the hybrid materials was verified. Carbon quantum-dots of TiO2 and ZnO nanostructured spheres were obtained in a second pot by controlled calcination steps of the precursor hybrid materials. A carefully characterization by adsorption-desorption N2 isotherms, XRD, XPS, SEM, UV-vis/DR and electro- and photo-electrochemistry properties of the carbon quantum-dots TiO2 and ZnO spheres was performed. The photoelectrochemical activity of TiO2-C and ZnO-C films proved to be dependent on the conditions of synthesis. It was found a red-shift in the energy band gap of the semiconductors with values of 3.02 eV and 3.13 eV for the TiO2-C and ZnO-C, respectively, clearly lower than those on bare semiconductors, which is associated with the C-doping effect. From the photo-electrochemistry characterization of C-doped TiO2 and ZnO films can be concluded that the present materials have potential applications as photoelectrodes for quantum-dots sensitized solar cells.

Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots

PubMed Central

2012-01-01

Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states. PMID:22726724

Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin

NASA Astrophysics Data System (ADS)

He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

2017-08-01

Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

Quantum dot behavior in transition metal dichalcogenides nanostructures

NASA Astrophysics Data System (ADS)

Luo, Gang; Zhang, Zhuo-Zhi; Li, Hai-Ou; Song, Xiang-Xiang; Deng, Guang-Wei; Cao, Gang; Xiao, Ming; Guo, Guo-Ping

2017-08-01

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band

NASA Astrophysics Data System (ADS)

Zeuner, Katharina D.; Paul, Matthias; Lettner, Thomas; Reuterskiöld Hedlund, Carl; Schweickert, Lucas; Steinhauer, Stephan; Yang, Lily; Zichi, Julien; Hammar, Mattias; Jöns, Klaus D.; Zwiller, Val

2018-04-01

The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength-tunability of individual sources is crucial to (i) bring remote sources into resonance, (ii) define a wavelength standard, and (iii) ensure scalability to operate a quantum repeater. So far, the most promising sources for true, telecom single photons are semiconductor quantum dots, due to their ability to deterministically and reliably emit single and entangled photons. However, the required wavelength-tunability is hard to attain. Here, we show a stable wavelength-tunable quantum light source by integrating strain-released InAs quantum dots on piezoelectric substrates. We present triggered single-photon emission at 1.55 μm with a multi-photon emission probability as low as 0.097, as well as photon pair emission from the radiative biexciton-exciton cascade. We achieve a tuning range of 0.25 nm which will allow us to spectrally overlap remote quantum dots or tuning distant quantum dots into resonance with quantum memories. This opens up realistic avenues for the implementation of photonic quantum information processing applications at telecom wavelengths.

A semiconductor photon-sorter

NASA Astrophysics Data System (ADS)

Bennett, A. J.; Lee, J. P.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

2016-10-01

Obtaining substantial nonlinear effects at the single-photon level is a considerable challenge that holds great potential for quantum optical measurements and information processing. Of the progress that has been made in recent years one of the most promising methods is to scatter coherent light from quantum emitters, imprinting quantum correlations onto the photons. We report effective interactions between photons, controlled by a single semiconductor quantum dot that is weakly coupled to a monolithic cavity. We show that the nonlinearity of a transition modifies the counting statistics of a Poissonian beam, sorting the photons in number. This is used to create strong correlations between detection events and to create polarization-correlated photons from an uncorrelated stream using a single spin. These results pave the way for semiconductor optical switches operated by single quanta of light.

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

NASA Astrophysics Data System (ADS)

Lazić, S.; Chernysheva, E.; Hernández-Mínguez, A.; Santos, P. V.; van der Meulen, H. P.

2018-03-01

We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and biexciton confined in the probed nanowire quantum dot. When the nanowire is perturbed by the propagating acoustic wave, the embedded quantum dot is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling. Depending on the recombination lifetime of the involved optical transitions, we can resolve acoustically driven radiative processes over time scales defined by the acoustic cycle. At high acoustic amplitudes, we also observe distortions in the transmitted acoustic waveform, which are reflected in the time-dependent spectral response of our sensor quantum dot. In addition, the correlated intensity oscillations observed during temporal decay of the exciton and biexciton emission suggest an effect of the acoustic piezoelectric fields on the quantum dot charge population. The present results are relevant for the dynamic spectral and temporal control of photon emission in III-nitride semiconductor heterostructures.

Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

NASA Astrophysics Data System (ADS)

Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

2011-08-01

This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

PubMed Central

Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

2015-01-01

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

NASA Astrophysics Data System (ADS)

Vandersypen, L. M. K.; Bluhm, H.; Clarke, J. S.; Dzurak, A. S.; Ishihara, R.; Morello, A.; Reilly, D. J.; Schreiber, L. R.; Veldhorst, M.

2017-09-01

Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual direct current, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here, we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long-spin coherence times, and the rich options for integration with classical electronics based on the same technology.

Current Fluctuations in a Semiconductor Quantum Dot with Large Energy Spacing

NASA Astrophysics Data System (ADS)

Jeong, Heejun

2014-12-01

We report on the measurements of the current noise properties of electron tunneling through a split-gate GaAs quantum dot with large energy level spacing and a small number of electrons. Shot noise is full Poissonian or suppressed in the Coulomb-blockaded regime, while it is enhanced to show as super-Poissonian when an excited energy level is involved by finite source-drain bias. The results can be explained by multiple Poissonian processes through multilevel sequential tunneling.

Photovoltage field-effect transistors

NASA Astrophysics Data System (ADS)

Adinolfi, Valerio; Sargent, Edward H.

2017-02-01

The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of silicon photodetectors into the infrared spectrum, beyond the bandgap of silicon. Here we demonstrate a photovoltage field-effect transistor that uses silicon for charge transport, but is also sensitive to infrared light owing to the use of a quantum dot light absorber. The photovoltage generated at the interface between the silicon and the quantum dot, combined with the high transconductance provided by the silicon device, leads to high gain (more than 104 electrons per photon at 1,500 nanometres), fast time response (less than 10 microseconds) and a widely tunable spectral response. Our photovoltage field-effect transistor has a responsivity that is five orders of magnitude higher at a wavelength of 1,500 nanometres than that of previous infrared-sensitized silicon detectors. The sensitization is achieved using a room-temperature solution process and does not rely on traditional high-temperature epitaxial growth of semiconductors (such as is used for germanium and III-V semiconductors). Our results show that colloidal quantum dots can be used as an efficient platform for silicon-based infrared detection, competitive with state-of-the-art epitaxial semiconductors.

The thermoelectric efficiency of quantum dots in indium arsenide/indium phosphide nanowires

NASA Astrophysics Data System (ADS)

Hoffmann, Eric A.

State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be loaded with electrons, one-by-one, and subsequently unloaded using source and drain electrical contacts. As such, quantum dots are uniquely tunable platforms for performing quantum transport and quantum control experiments. Voltage-biased electron transport through quantum dots has been studied extensively. Far less attention has been given to thermoelectric effects in quantum dots, that is, electron transport induced by a temperature gradient. This dissertation focuses on the efficiency of direct thermal-to-electric energy conversion in InAs/InP quantum dots embedded in nanowires. The efficiency of thermoelectric heat engines is bounded by the same maximum efficiency as cyclic heat engines; namely, by Carnot efficiency. The efficiency of bulk thermoelectric materials suffers from their inability to transport charge carriers selectively based on energy. Owing to their three-dimensional momentum quantization, quantum dots operate as electron energy filters---a property which can be harnessed to minimize entropy production and therefore maximize efficiency. This research was motivated by the possibility to realize experimentally a thermodynamic heat engine operating with near-Carnot efficiency using the unique behavior of quantum dots. To this end, a microscopic heating scheme for the application of a temperature difference across a quantum dot was developed in conjunction with a novel quantum-dot thermometry technique used for quantifying the magnitude of the applied temperature difference. While pursuing high-efficiency thermoelectric performance, many mesoscopic thermoelectric effects were observed and studied, including Coulomb-blockade thermovoltage oscillations, thermoelectric power generation, and strong nonlinear behavior. In the end, a quantum-dot-based thermoelectric heat engine was achieved and demonstrated an electronic efficiency of up to 95% Carnot efficiency.

Artful and multifaceted applications of carbon dot in biomedicine.

PubMed

Jaleel, Jumana Abdul; Pramod, K

2018-01-10

Carbon dots (C-dots) are luminescent carbon nanomaterial having good biocompatibility and low toxicity. The characteristic fluorescence emission property of C-dots establishes their role in optical imaging. C-dots which are superior to fluorescent dyes and semiconductor quantum dots act as a safer in vivo imaging probe. Apart from their bioimaging application, other applications in biomedicine such as drug delivery, cancer therapy, and gene delivery were studied. In this review, we present multifaceted applications of C-dots along with their synthesis, surface passivation, doping, and toxicity profile. Copyright © 2017 Elsevier B.V. All rights reserved.

Emission enhancement and polarization of semiconductor quantum dots with nanoimprinted plasmonic cavities: towards scalable fabrication of plasmon-exciton displays.

PubMed

Cadusch, Jasper J; Panchenko, Evgeniy; Kirkwood, Nicholas; James, Timothy D; Gibson, Brant C; Webb, Kevin J; Mulvaney, Paul; Roberts, Ann

2015-09-07

Here we present an application of a high throughput nanofabrication technique to the creation of a plasmonic metasurface and demonstrate its application to the enhancement and control of radiation by quantum dots (QDs). The metasurface consists of an array of cold-forged rectangular nanocavities in a thin silver film. High quantum efficiency graded alloy CdSe/CdS/ZnS quantum dots were spread over the metasurface and the effects of the plasmon-exciton interactions characterised. We found a four-fold increase in the QDs radiative decay rate and emission brightness, compared to QDs on glass, along with a degree of linear polarisation of 0.73 in the emitted field. Such a surface could be easily integrated with current QD display or organic solar cell designs.

Blinking correlation in nanocrystal quantum dots probed with novel laser scanning confocal microscopy methods

NASA Astrophysics Data System (ADS)

Hefti, Ryan Alf

Semiconductor quantum dots have a vast array of applications: as fluorescent labels in biological systems, as physical or chemical sensors, as components in photovoltaic technology, and in display devices. An attribute of nearly every quantum dot is its blinking, or fluorescence intermittency, which tends to be a disadvantage in most applications. Despite the fact that blinking has been a nearly universal phenomenon among all types of fluorescent constructs, it is more prevalent in quantum dots than in traditional fluorophores. Furthermore, no unanimously accepted model of quantum dot blinking yet exists. The work encompassed by this dissertation began with an in-depth study of molecular motor protein dynamics in a variety of environments using two specially developed techniques, both of which feature applicability to live cell systems. Parked-beam confocal microscopy was utilized to increase temporal resolution of molecular motor motion dynamics by an order of magnitude over other popular methods. The second technique, fast-scanning confocal microscopy (FSCM), was used for long range observation of motor proteins. While using FSCM on motor protein assays, we discovered an unusual phenomenon. Single quantum dots seemingly communicated with neighboring quantum dots, indicated by a distinct correlation in their blinking patterns. In order to explain this novel correlation phenomenon, the majority of blinking models developed thus far would suggest a dipole-dipole interaction or a Coulomb interaction between singly charged quantum dots. However, our results indicate that the interaction energy is higher than supported by current models, thereby prompting a renewed examination. We propose that the blinking correlation we observed is due to a Coulomb interaction on the order of 3-4 elementary charges per quantum dot and that multiple charging of individual quantum dots may be required to plunge them into a non-emissive state. As a result of charging, charge carriers are displaced into a wide distribution of trap sites in the surrounding matrix, resulting in the expected power-law probability distribution of off times ubiquitous in quantum dots. Our discovery also implies that quantum dot blinking can be controlled, advocating the creation of switchable nanoscale emitters.

Plasmonic engineering of spontaneous emission from silicon nanocrystals.

PubMed

Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

2013-01-01

Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells.

Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles

PubMed Central

Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M.

2014-01-01

Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies. PMID:25120488

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor.

PubMed

He, Penghui; Jiang, Congbiao; Lan, Linfeng; Sun, Sheng; Li, Yizhi; Gao, Peixiong; Zhang, Peng; Dai, Xingqiang; Wang, Jian; Peng, Junbiao; Cao, Yong

2018-05-22

Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In 2 O 3 ) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm 2 V -1 s -1 , a maximum brightness of 13 400 cd/m 2 , and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In 2 O 3 and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In 2 O 3 can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 10 5 and the on/off brightness ratio is 10 6 ).

Spin-orbit qubit in a semiconductor nanowire.

PubMed

Nadj-Perge, S; Frolov, S M; Bakkers, E P A M; Kouwenhoven, L P

2010-12-23

Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to control spins electrically and thus lies at the foundation of spintronics. Even at the level of single electrons, the spin-orbit interaction has proven promising for coherent spin rotations. Here we implement a spin-orbit quantum bit (qubit) in an indium arsenide nanowire, where the spin-orbit interaction is so strong that spin and motion can no longer be separated. In this regime, we realize fast qubit rotations and universal single-qubit control using only electric fields; the qubits are hosted in single-electron quantum dots that are individually addressable. We enhance coherence by dynamically decoupling the qubits from the environment. Nanowires offer various advantages for quantum computing: they can serve as one-dimensional templates for scalable qubit registers, and it is possible to vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and to push semiconductor qubit fidelities towards error correction levels. Furthermore, electrical dots can be integrated with optical dots in p-n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, which can serve as a flying qubit for long-distance quantum communication.

Single-particle studies of band alignment effects on electron transfer dynamics from semiconductor hetero-nanostructures to single-walled carbon nanotubes.

PubMed

Yuan, Chi-Tsu; Wang, Yong-Gang; Huang, Kuo-Yen; Chen, Ting-Yu; Yu, Pyng; Tang, Jau; Sitt, Amit; Banin, Uri; Millo, Oded

2012-01-24

We utilize single-molecule spectroscopy combined with time-correlated single-photon counting to probe the electron transfer (ET) rates from various types of semiconductor hetero-nanocrystals, having either type-I or type-II band alignment, to single-walled carbon nanotubes. A significantly larger ET rate was observed for type-II ZnSe/CdS dot-in-rod nanostructures as compared to type-I spherical CdSe/ZnS core/shell quantum dots and to CdSe/CdS dot-in-rod structures. Furthermore, such rapid ET dynamics can compete with both Auger and radiative recombination processes, with significance for effective photovoltaic operation. © 2011 American Chemical Society

Development of a Si/ SiO 2-based double quantum dot charge qubit with dispersive microwave readout

NASA Astrophysics Data System (ADS)

House, M. G.; Henry, E.; Schmidt, A.; Naaman, O.; Siddiqi, I.; Pan, H.; Xiao, M.; Jiang, H. W.

2011-03-01

Coupling of a high-Q microwave resonator to superconducting qubits has been successfully used to prepare, manipulate, and read out the state of a single qubit, and to mediate interactions between qubits. Our work is geared toward implementing this architecture in a semiconductor qubit. We present the design and development of a lateral quantum dot in which a superconducting microwave resonator is capacitively coupled to a double dot charge qubit. The device is a silicon MOSFET structure with a global gate which is used to accumulate electrons at a Si/ Si O2 interface. A set of smaller gates are used to deplete these electrons to define a double quantum dot and adjacent conduction channels. Two of these depletion gates connect directly to the conductors of a 6 GHz co-planar stripline resonator. We present measurements of transport and conventional charge sensing used to characterize the double quantum dot, and demonstrate that it is possible to reach the few-electron regime in this system. This work is supported by the DARPA-QuEST program.

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

NASA Astrophysics Data System (ADS)

Teubert, J.; Koslowski, S.; Lippert, S.; Schäfer, M.; Wallys, J.; Dimitrakopulos, G.; Kehagias, Th.; Komninou, Ph.; Das, A.; Monroy, E.; Eickhoff, M.

2013-08-01

We investigated the electric-field dependence of the photoluminescence-emission properties of InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations of the surface potential were achieved by the application of external electric fields using the electrolytic Schottky contact and by variation of the solution's pH value. Prior to characterization, a selective electrochemical passivation process was required to suppress leakage currents. The quantum dot luminescence is strongly affected by surface potential variations, i.e., it increases exponentially with cathodic bias and acidic pH values. The results cannot be explained by a modification of intra-dot polarization induced electric fields via the quantum confined Stark effect but are attributed to the suppression/enhancement of non-radiative recombination processes, i.e., mainly hole transfer into the electrolyte. The results establish a link between the photoluminescence intensity and the magnitude of electric fields at the semiconductor/electrolyte interface.

Entanglement distribution schemes employing coherent photon-to-spin conversion in semiconductor quantum dot circuits

NASA Astrophysics Data System (ADS)

Gaudreau, Louis; Bogan, Alex; Korkusinski, Marek; Studenikin, Sergei; Austing, D. Guy; Sachrajda, Andrew S.

2017-09-01

Long distance entanglement distribution is an important problem for quantum information technologies to solve. Current optical schemes are known to have fundamental limitations. A coherent photon-to-spin interface built with quantum dots (QDs) in a direct bandgap semiconductor can provide a solution for efficient entanglement distribution. QD circuits offer integrated spin processing for full Bell state measurement (BSM) analysis and spin quantum memory. Crucially the photo-generated spins can be heralded by non-destructive charge detection techniques. We review current schemes to transfer a polarization-encoded state or a time-bin-encoded state of a photon to the state of a spin in a QD. The spin may be that of an electron or that of a hole. We describe adaptations of the original schemes to employ heavy holes which have a number of attractive properties including a g-factor that is tunable to zero for QDs in an appropriately oriented external magnetic field. We also introduce simple throughput scaling models to demonstrate the potential performance advantage of full BSM capability in a QD scheme, even when the quantum memory is imperfect, over optical schemes relying on linear optical elements and ensemble quantum memories.

Complete quantum control of exciton qubits bound to isoelectronic centres.

PubMed

Éthier-Majcher, G; St-Jean, P; Boso, G; Tosi, A; Klem, J F; Francoeur, S

2014-05-30

In recent years, impressive demonstrations related to quantum information processing have been realized. The scalability of quantum interactions between arbitrary qubits within an array remains however a significant hurdle to the practical realization of a quantum computer. Among the proposed ideas to achieve fully scalable quantum processing, the use of photons is appealing because they can mediate long-range quantum interactions and could serve as buses to build quantum networks. Quantum dots or nitrogen-vacancy centres in diamond can be coupled to light, but the former system lacks optical homogeneity while the latter suffers from a low dipole moment, rendering their large-scale interconnection challenging. Here, through the complete quantum control of exciton qubits, we demonstrate that nitrogen isoelectronic centres in GaAs combine both the uniformity and predictability of atomic defects and the dipole moment of semiconductor quantum dots. This establishes isoelectronic centres as a promising platform for quantum information processing.

Nanoscale solid-state quantum computing

NASA Astrophysics Data System (ADS)

Ardavan, A.; Austwick, M.; Benjamin, S.C.; Briggs, G.A.D.; Dennis, T.J.S.; Ferguson, A.; Hasko, D.G.; Kanai, M.; Khlobystov, A.N.; Lovett, B.W.; Morley, G.W.; Oliver, R.A.; Pettifor, D.G.; Porfyrakis, K.; Reina, J.H.; Rice, J.H.; Smith, J.D.; Taylor, R.A.; Williams, D.A.; Adelmann, C.; Mariette, H.; Hamers, R.J.

2003-07-01

Most experts agree that it is too early to say how quantum computers will eventually be built, and several nanoscale solid-state schemes are being implemented in a range of materials. Nanofabricated quantum dots can be made in designer configurations, with established technology for controlling interactions and for reading out results. Epitaxial quantum dots can be grown in vertical arrays in semiconductors, and ultrafast optical techniques are available for controlling and measuring their excitations. Single-walled carbon nanotubes can be used for molecular self-assembly of endohedral fullerenes, which can embody quantum information in the electron spin. The challenges of individual addressing in such tiny structures could rapidly become intractable with increasing numbers of qubits, but these schemes are amenable to global addressing methods for computation.

Radio-frequency measurement in semiconductor quantum computation

NASA Astrophysics Data System (ADS)

Han, TianYi; Chen, MingBo; Cao, Gang; Li, HaiOu; Xiao, Ming; Guo, GuoPing

2017-05-01

Semiconductor quantum dots have attracted wide interest for the potential realization of quantum computation. To realize efficient quantum computation, fast manipulation and the corresponding readout are necessary. In the past few decades, considerable progress of quantum manipulation has been achieved experimentally. To meet the requirements of high-speed readout, radio-frequency (RF) measurement has been developed in recent years, such as RF-QPC (radio-frequency quantum point contact) and RF-DGS (radio-frequency dispersive gate sensor). Here we specifically demonstrate the principle of the radio-frequency reflectometry, then review the development and applications of RF measurement, which provides a feasible way to achieve high-bandwidth readout in quantum coherent control and also enriches the methods to study these artificial mesoscopic quantum systems. Finally, we prospect the future usage of radio-frequency reflectometry in scaling-up of the quantum computing models.

CdSe magic-sized quantum dots incorporated in biomembrane models at the air-water interface composed of components of tumorigenic and non-tumorigenic cells.

PubMed

Goto, Thiago E; Lopes, Carla C; Nader, Helena B; Silva, Anielle C A; Dantas, Noelio O; Siqueira, José R; Caseli, Luciano

2016-07-01

Cadmium selenide (CdSe) magic-sized quantum dots (MSQDs) are semiconductor nanocrystals with stable luminescence that are feasible for biomedical applications, especially for in vivo and in vitro imaging of tumor cells. In this work, we investigated the specific interaction of CdSe MSQDs with tumorigenic and non-tumorigenic cells using Langmuir monolayers and Langmuir-Blodgett (LB) films of lipids as membrane models for diagnosis of cancerous cells. Surface pressure-area isotherms and polarization modulation reflection-absorption spectroscopy (PM-IRRAS) showed an intrinsic interaction between the quantum dots, inserted in the aqueous subphase, and Langmuir monolayers constituted either of selected lipids or of tumorigenic and non-tumorigenic cell extracts. The films were transferred to solid supports to obtain microscopic images, providing information on their morphology. Similarity between films with different compositions representing cell membranes, with or without the quantum dots, was evaluated by atomic force microscopy (AFM) and confocal microscopy. This study demonstrates that the affinity of quantum dots for models representing cancer cells permits the use of these systems as devices for cancer diagnosis. Copyright © 2016 Elsevier B.V. All rights reserved.

Biomolecule/nanomaterial hybrid systems for nanobiotechnology.

PubMed

Tel-Vered, Ran; Yehezkeli, Omer; Willner, Itamar

2012-01-01

The integration of biomolecules with metallic or semiconductor nanoparticles or carbon nanotubes yields new hybrid nanostructures of unique features that combine the properties of the biomolecules and of the nano-elements. These unique features of the hybrid biomolecule/nanoparticle systems provide the basis for the rapid development of the area of nanobiotechnology. Recent advances in the implementation of hybrid materials consisting of biomolecules and metallic nanoparticles or semiconductor quantum dots will be discussed. The following topics will be exemplified: (i) The electrical wiring of redox enzymes with electrodes by means of metallic nanoparticles or carbon nanotubes, and the application of the modified electrodes as amperometric biosensors or for the construction of biofuel cells. (ii) The biocatalytic growth of metallic nanoparticles as a means to construct optical or electrical sensors. (iii) The functionalization of semiconductor quantum dots with biomolecules and the application of the hybrid nanostructures for developing different optical sensors, including intracellular sensor systems. (iv) The use of biomolecule-metallic nanoparticle nanostructures as templates for growing metallic nanowires, and the construction of fuel-driven nano-transporters.

The Application of Fluorescent Quantum Dots to Confocal, Multiphoton, and Electron Microscopic Imaging

PubMed Central

Deerinck, Thomas J.

2009-01-01

Fluorescent quantum dots are emerging as an important tool for imaging cells and tissues, and their unique optical and physical properties have captured the attention of the research community. The most common types of commercially available quantum dots consist of a nanocrystalline semiconductor core composed of cadmium selenide with a zinc sulfide capping layer and an outer polymer layer to facilitate conjugation to targeting biomolecules such as immunoglobulins. They exhibit high fluorescent quantum yields and have large absorption cross-sections, possess excellent photostability, and can be synthesized so that their narrow-band fluorescence emission can occur in a wide spectrum of colors. These properties make them excellent candidates for serving as multiplexing molecular beacons using a variety of imaging modalities including highly correlated microscopies. Whereas much attention has been focused on quantum-dot applications for live-cell imaging, we have sought to characterize and exploit their utility for enabling simultaneous multiprotein immunolabeling in fixed cells and tissues. Considerations for their application to immunolabeling for correlated light and electron microscopic analysis are discussed. PMID:18337229

Double Quantum Dots in Carbon Nanotubes

DTIC Science & Technology

2010-06-02

occupation of one dot is favored by increasing the detuning between the dots, the Coulomb interaction causes strong correlation effects realized by...al- low the measurement and manipulation of the spin de - gree of freedom of the confined electrons1. Such con- trol is at the heart of semiconductor...of an additional val- ley degree of freedom, the two-electron eigenstates can be separated in an orbital part and a spin-valley part that are, to a

Polarization, spectral, and spatial emission characteristics of chiral semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Maksimov, A. A.; Peshcherenko, A. B.; Filatov, E. V.; Tartakovskii, I. I.; Kulakovskii, V. D.; Tikhodeev, S. G.; Lobanov, S. V.; Schneider, C.; Höfling, S.

2017-11-01

A detailed study of the degree of circular polarization and the angular dependence of the emission spectra of an array of InAs quantum dots embedded in GaAs photonic nanostructures with chiral symmetry in the absence of an external magnetic field is carried out. A strong angular dependence of the spectra and the degree of circular polarization of radiation from quantum dots, as well as a significant effect of the lattice period of the photonic crystal on the radiation characteristics, is observed. The dispersion of photonic modes near the (±3, 0) and (±2, ±2) Bragg resonances is investigated in detail. The experimentally observed polarization, spectral, and angular characteristics of the quantum-dot emission are explained in the framework of a theory describing radiative processes in chiral photonic nanostructures.

Epitaxial Zn quantum dots coherently grown on Si(1 1 1): growth mechanism, nonlinear optical and chemical states analyses

NASA Astrophysics Data System (ADS)

Huang, Bo-Jia; Kao, Li-Chi; Brahma, Sanjaya; Jeng, Yu-En; Chiu, Shang-Jui; Ku, Ching-Shun; Lo, Kuang-Yao

2017-05-01

Oxide- and defect-free metal/semiconductor interface is important to improve Ohmic contact for the suppression of electron scattering and the avoidance of an extrinsic surface state in estimating the barrier of the Schottky contact at the nanodevice interface. This study reports the growth mechanism of Zn quantum dots coherently grown on Si(1 1 1) and the physical phenomena of the crystalline, nonlinear optics, and the chemical states of Zn quantum dots. Epitaxial Zn quantum dots were coherently formed on a non-oxide Si(1 1 1) surface through the liquid- to solid-phase transformation as a result of pattern matching between the Zn(0 0 2) and Si(1 1 1) surfaces. The growth mechanism of constrained Zn quantum dots grown through strategic magnetron radio frequency sputtering is complex. Some factors, such as substrate temperature, hydrogen gas flow, and negative DC bias, influence the configuration of epitaxial Zn quantum dots. In particular, hydrogen gas plays an important role in reducing the ZnO+ and native oxide that is bombarded by accelerated ions, thereby enhancing the Zn ion surface diffusion. The reduction reaction can be inspected by distinguishing the chemical states of ZnO/Zn quantum dots from natural oxidation or the states of Zn 3d through the analysis of x-ray absorption near the edge structure spectrum. The complex growth mechanism can be systematically understood by analyzing a noncancelled anisotropic 3 m dipole from reflective second harmonic generation and inspecting the evolution between the Zn(0 0 2) and Zn(1 1 1) peaks of the collective ZnO/Zn quantum dots in synchrotron XRD.

Toward the in vivo study of captopril-conjugated quantum dots

NASA Astrophysics Data System (ADS)

Manabe, Noriyoshi; Hoshino, Akiyoshi; Liang, Yi-qiang; Goto, Tomomasa; Kato, Norihiro; Yamamoto, Kenji

2005-04-01

Photo-luminescent semiconductor quantum dots are nanometer-size probes that have the potential to be applied to the fields of the bio-imaging and the study of the cell mobility inside the body. At the same time, on the other hand, quantum dots are expected to carry some kind of molecules to the local organ inside of the animal body, which leads to the expectation that they can be used as a medicine-carrier. For this purpose, we conjugate (2S)-1-[(2s)-2-Methyl-3-sulfanylpropionyl]pyrrolidine-2-carboxylic acid (cap) with the quantum dot. Cap has the effect as an anti-hypertension drug, which inhibits angiotensin 1 converting enzyme. We conjugated the quantum dot with cap by the exchange reaction avoiding the regions which holds medicinal effect. Quantum dot conjugated with cap (QD-cap) were 3-times brighter than thioglycerol-coated quantum dots (QD-OH). The particle size of cap was 1.1nm and that of QD-cap was 12nm. QD-cap was permeated into the HeLa cells, while QD-MUA were taken into the HeLa cells by endocytosis. In addition, no apoptosis was detected against the cells that permeated QD-cap, because there was no damage to DNA. These results indicated that QD-conjugated medicines (QD-medicine) could be safe in the experiment on the level of the cell. More over, when QD-cap was intravenously injected into Stroke-prone Spontaneously Hypertensive Rats (SHRSP), they reduced blood pressure at systole. Therefore, the anti-hypertension effect of cap remained after conjugated with the quantum dot. These results suggested that QD-medicine were effective on the animal level.

The Physics of Ultracold Sr2 Molecules: Optical Production and Precision Measurement

NASA Astrophysics Data System (ADS)

Osborn, Christopher Butler

Colloidal quantum dots have desirable optical properties which can be exploited to realize a variety of photonic devices and functionalities. However, colloidal dots have not had a pervasive utility in photonic devices because of the absence of patterning methods. The electronic chip industry is highly successful due to the well-established lithographic procedures. In this thesis we borrow ideas from the semiconductor industry to develop lithographic techniques that can be used to pattern colloidal quantum dots while ensuring that the optical properties of the quantum dots are not affected by the process. In this thesis we have developed colloidal quantum dot based waveguide structures for amplification and switching applications for all-optical signal processing. We have also developed colloidal quantum dot based light emitting diodes. We successfully introduced CdSe/ZnS quantum dots into a UV curable photo-resist, which was then patterned to realize active devices. In addition, "passive" devices (devices without quantum dots) were integrated to "active" devices via waveguide couplers. Use of photo-resist devices offers two distinct advantages. First, they have low scattering loss and secondly, they allow good fiber to waveguide coupling efficiency due to the low refractive index which allows for large waveguide cross-sections while supporting single mode operation. Practical planar photonic devices and circuits incorporating both active and passive structures can now be realized, now that we have patterning capabilities of quantum dots while maintaining the original optical attributes of the system. In addition to the photo-resist host, we also explored the incorporation of colloidal quantum dots into a dielectric silicon dioxide and silicon nitride one-dimensional microcavity structures using low temperature plasma enhanced chemical vapor deposition. This material system can be used to realize microcavity light emitting diodes that can be realized on any substrate. As a proof of concept demonstration we show a 1550 nm emitting all-dielectric vertical cavity structure embedded with PbS quantum dots. Enhancement in spontaneous emission from the dots embedded in the microcavity is also demonstrated.

Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

NASA Astrophysics Data System (ADS)

Shen, Yaoming

Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum-dot molecules (QDMs), which are clusters of a few QDs, has attracted attention as a possible implementation of future quantum devices such as quantum cellular antomata. With the advances in crystal growth techniques, the fabrication methods for nanostructures have been improved continuously. Lateral QDMs have been achieved. As a side topic, lateral QDMs have been studied and the result is presented in the last chapter.

Perspective: The future of quantum dot photonic integrated circuits

NASA Astrophysics Data System (ADS)

Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

2018-03-01

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

Longitudinal wave function control in single quantum dots with an applied magnetic field

PubMed Central

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-01

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. PMID:25624018

Longitudinal wave function control in single quantum dots with an applied magnetic field.

PubMed

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-27

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.

Input-output theory for spin-photon coupling in Si double quantum dots

NASA Astrophysics Data System (ADS)

Benito, M.; Mi, X.; Taylor, J. M.; Petta, J. R.; Burkard, Guido

2017-12-01

The interaction of qubits via microwave frequency photons enables long-distance qubit-qubit coupling and facilitates the realization of a large-scale quantum processor. However, qubits based on electron spins in semiconductor quantum dots have proven challenging to couple to microwave photons. In this theoretical work we show that a sizable coupling for a single electron spin is possible via spin-charge hybridization using a magnetic field gradient in a silicon double quantum dot. Based on parameters already shown in recent experiments, we predict optimal working points to achieve a coherent spin-photon coupling, an essential ingredient for the generation of long-range entanglement. Furthermore, we employ input-output theory to identify observable signatures of spin-photon coupling in the cavity output field, which may provide guidance to the experimental search for strong coupling in such spin-photon systems and opens the way to cavity-based readout of the spin qubit.

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots.

PubMed

Wang, T; Puchtler, T J; Zhu, T; Jarman, J C; Nuttall, L P; Oliver, R A; Taylor, R A

2017-07-13

Solid-state single photon sources with polarisation control operating beyond the Peltier cooling barrier of 200 K are desirable for a variety of applications in quantum technology. Using a non-polar InGaN system, we report the successful realisation of single photon emission with a g (2) (0) of 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K in semiconductor quantum dots. The temperature insensitivity of these properties, together with the simple planar epitaxial growth method and absence of complex device geometries, demonstrates that fast single photon emission with polarisation control can be achieved in solid-state quantum dots above the Peltier temperature threshold, making this system a potential candidate for future on-chip applications in integrated systems.

Electrically driven spin qubit based on valley mixing

NASA Astrophysics Data System (ADS)

Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M.; Dzurak, Andrew S.; Culcer, Dimitrie

2017-02-01

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Highly Sensitive Detection of Glucose by a "Turn-Off-On" Fluorescent Probe Using Gadolinium-Doped Carbon Dots and Carbon Microparticles.

PubMed

Hu, Meixin; Qi, Jianrong; Ruan, Jing; Shen, Guangxia

2018-06-01

Carbon dots, as a potential substitute for semiconductor quantum dots, have drawn great interest in recent years. The preparation of fluorescent carbon dots has been made easy with many significant advances, but the complicated purifying processes, low quantum yield, and blue emission wavelength still limit its wider application in biosensors, biomedicine, and photonic devices. Here we report a strategy to synthesis Gd-doped carbon dots (Gd-Cdots) of super-high quantum yield with a microwave assisted hydrothermal method. The Gd-Cdots, with a diameter of 47∼8 nm, can be purified easily with conventional centrifugal techniques. Carbon microparticles (CMPs) have also been synthesized with a similar procedure. Meanwhile, we demonstrated a novel "turn-off-on" fluorescent biosensor, which has been developed for highly sensitive detection of glucose using Gd-doped carbon dots as probes. The proposed biosensor has exhibited low-cost and non-toxic properties, with high sensitivity and good specificity. In addition, the results in real blood samples further confirmed it as a promising application in diabetes diagnosis.

Quantum Dots for Molecular Diagnostics of Tumors

PubMed Central

Zdobnova, T.A.; Lebedenko, E.N.; Deyev, S.М.

2011-01-01

Semiconductor quantum dots (QDs) are a new class of fluorophores with unique physical and chemical properties, which allow to appreciably expand the possibilities for the current methods of fluorescent imaging and optical diagnostics. Here we discuss the prospects of QD application for molecular diagnostics of tumors ranging from cancer-specific marker detection on microplates to non-invasive tumor imagingin vivo. We also point out the essential problems that require resolution in order to clinically promote QD, and we indicate innovative approaches to oncology which are implementable using QD. PMID:22649672

The analytical approach to optimization of active region structure of quantum dot laser

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2014-10-01

Using the analytical approach introduced in our previous papers we analyse the possibilities of optimization of size and structure of active region of semiconductor quantum dot lasers emitting via ground-state optical transitions. It is shown that there are optimal length' dispersion and number of QD layers in laser active region which allow one to obtain lasing spectrum of a given width at minimum injection current. Laser efficiency corresponding to the injection current optimized by the cavity length is practically equal to its maximum value.

Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Maximov, M. V.

2015-11-01

The ways to optimize key parameters of active region and edge reflectivity of edge- emitting semiconductor quantum dot laser are provided. It is shown that in the case of optimal cavity length and sufficiently large dispersion lasing spectrum of a given width can be obtained at injection current up to an order of magnitude lower in comparison to non-optimized sample. The influence of internal loss and edge reflection is also studied in details.

Application of photostable quantum dots for indirect immunofluorescent detection of specific bacterial serotypes on small marine animals

NASA Astrophysics Data System (ADS)

Decho, Alan W.; Beckman, Erin M.; Chandler, G. Thomas; Kawaguchi, Tomohiro

2008-06-01

An indirect immunofluorescence approach was developed using semiconductor quantum dot nanocrystals to label and detect a specific bacterial serotype of the bacterial human pathogen Vibrio parahaemolyticus, attached to small marine animals (i.e. benthic harpacticoid copepods), which are suspected pathogen carriers. This photostable labeling method using nanotechnology will potentially allow specific serotypes of other bacterial pathogens to be detected with high sensitivity in a range of systems, and can be easily applied for sensitive detection to other Vibrio species such as Vibrio cholerae.

Quantum dot SOA/silicon external cavity multi-wavelength laser.

PubMed

Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

2015-02-23

We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

Localized surface plasmon and exciton interaction in silver-coated cadmium sulphide quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghosh, P.; Rustagi, K. C.; Vasa, P.

2015-05-15

Localized surface plasmon and exciton coupling has been investigated on colloidal solutions of silver-coated CdS nanoparticles (NPs), synthesized by gamma irradiation. Two broad photoluminescence (PL) bands (blue/red) corresponding to band to band and defect state transitions have been observed for the bare and coated samples. In case of bare CdS NPs, the intensity of the red PL peak is about ten times higher than the blue PL peak intensity. However, on coating the CdS NPs with silver, the peak intensity of the blue PL band gets enhanced and becomes equal to that of the red PL band. High-resolution transmission electronmore » microscopic (HRTEM) images adequately demonstrate size distribution of these metal/semiconductor nanocomposites. UV-Vis absorption studies show quantum confinement effect in these semiconductor quantum dot (SQD) systems. Absorption spectrum of silver-coated SQDs shows signature of surface plasmon-exciton coupling which has been theoretically verified.« less

A quantum dot single-photon source with on-the-fly all-optical polarization control and timed emission.

PubMed

Heinze, Dirk; Breddermann, Dominik; Zrenner, Artur; Schumacher, Stefan

2015-10-05

Sources of single photons are key elements for applications in quantum information science. Among the different sources available, semiconductor quantum dots excel with their integrability in semiconductor on-chip solutions and the potential that photon emission can be triggered on demand. Usually, the photon is emitted from a single-exciton ground state. Polarization of the photon and time of emission are either probabilistic or pre-determined by electronic properties of the system. Here, we study the direct two-photon emission from the biexciton. The two-photon emission is enabled by a laser pulse driving the system into a virtual state inside the band gap. From this intermediate state, the single photon of interest is then spontaneously emitted. We show that emission through this higher-order transition provides a versatile approach to generate a single photon. Through the driving laser pulse, polarization state, frequency and emission time of the photon can be controlled on-the-fly.

The effect of multi-intermediate bands on the behavior of an InAs1-xNx/GaAs1-ySby quantum dot solar cell

NASA Astrophysics Data System (ADS)

Aly, Abou El-Maaty M.; Nasr, A.

2015-04-01

A mathematical model of quantum dot intermediate band solar cells (QDIBSCs) is investigated using two intermediate bands (IBs). These two IBs arise from the quantum dot (QD) semiconductor material within the bandgap energy. Some parameters such as the width of the QD (WQD) and the barrier thickness or the inter-dot distances between the QDs (BT) are studied to show their influence on the performance of the QDIBSC. The time-independent Schrüdinger equation, which is solved using the Kronig-Penney model, is used to determine the position and bandwidth energies of the two IBs. In our proposed model, the cubic shape of the QDs from InAs0.9N0.1 and the barrier or host semiconductor material from GaAs0.98Sb0.02 are utilized. It is shown from the results obtained that changing the parameters WQD and BT has more influence on the bandwidth energy for the first IB, Δ1, than in the case of the second IB, Δ2. The optimum power conversion efficiencies (PCEs) of the QDIBSCs with two IBs for the model under study are 58.01% and 73.55% at 1 sun and maximum solar concentration, respectively. One can observe that, in the case of the two IBs, an improvement of the PCE is achieved.

On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

NASA Astrophysics Data System (ADS)

Béguin, Lucas; Jahn, Jan-Philipp; Wolters, Janik; Reindl, Marcus; Huo, Yongheng; Trotta, Rinaldo; Rastelli, Armando; Ding, Fei; Schmidt, Oliver G.; Treutlein, Philipp; Warburton, Richard J.

2018-05-01

We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0 ) ˜0.10 -0.15 ] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

Breakdown of the Wigner-Mattis theorem in semiconductor carbon-nanotube quantum dots

NASA Astrophysics Data System (ADS)

Rontani, Massimo; Secchi, Andrea; Manghi, Franca

2009-03-01

The Wigner-Mattis theorem states the ground state of two bound electrons, in the absence of the magnetic field, is always a spin-singlet. We predict the opposite result --a triplet- for two electrons in a quantum dot defined in a semiconductor carbon nanotube. The claim is supported by extensive many-body calculations based on the accurate configuration interaction code DONRODRIGO (www.s3.infm.t/donrodrigo). The crux of the matter is the peculiar two-valley structure of low-energy states, which encodes a pseudo-spin degree of freedom. The spin polarization of the ground state corresponds to a pseudo-spin singlet, which is selected by the inter-valley short-range Coulomb interaction. Single-electron excitation spectra and STM wave function images may validate this scenario, as shown by our numerical simulations.

Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-10-01

We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

Bistable four-wave mixing response in a semiconductor quantum dot coupled to a photonic crystal nanocavity.

PubMed

Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun

2017-10-16

We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

NASA Astrophysics Data System (ADS)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

Quantum state reconstruction and photon number statistics for low dimensional semiconductor opto-electronic devices

NASA Astrophysics Data System (ADS)

Böhm, Fabian; Grosse, Nicolai B.; Kolarczik, Mirco; Herzog, Bastian; Achtstein, Alexander; Owschimikow, Nina; Woggon, Ulrike

2017-09-01

Quantum state tomography and the reconstruction of the photon number distribution are techniques to extract the properties of a light field from measurements of its mean and fluctuations. These techniques are particularly useful when dealing with macroscopic or mesoscopic systems, where a description limited to the second order autocorrelation soon becomes inadequate. In particular, the emission of nonclassical light is expected from mesoscopic quantum dot systems strongly coupled to a cavity or in systems with large optical nonlinearities. We analyze the emission of a quantum dot-semiconductor optical amplifier system by quantifying the modifications of a femtosecond laser pulse propagating through the device. Using a balanced detection scheme in a self-heterodyning setup, we achieve precise measurements of the quadrature components and their fluctuations at the quantum noise limit1. We resolve the photon number distribution and the thermal-to-coherent evolution in the photon statistics of the emission. The interferometric detection achieves a high sensitivity in the few photon limit. From our data, we can also reconstruct the second order autocorrelation function with higher precision and time resolution compared with classical Hanbury Brown-Twiss experiments.

Strain-induced vertical self-organization of semiconductor quantum dots: A computational study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shtinkov, N., E-mail: nshtinkov@uottawa.ca

Atomistic strain simulations based on the valence force field method are employed to study the vertical arrangements of semiconductor quantum dot (QD) multilayers. The effects of the QD shape, dimensions, and materials parameters are systematically investigated, varying independently the following parameters: spacer width H, QD lateral spacing D, base b, and height h, slope of the side facets, elastic properties of the dot and the substrate materials, and lattice mismatch between the dot and the substrate. The transition between vertically aligned and anti-aligned structures is found to be determined mainly by the ratios H/D and b/D, as well as bymore » the strain anisotropy of the substrate and to a lesser extent of the QD. The dependence on the QD height h is significant only for steep side facets and large aspect ratios h/b, and the effects of the lattice mismatch strain and the bulk elastic moduli are found to be negligible. The comparison with experimental data shows an excellent agreement with the results from the simulations, demonstrating that the presented analysis results in precise theoretical predictions for the vertical self-organization regime in a wide range of QD materials systems.« less

High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

NASA Astrophysics Data System (ADS)

Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

2018-04-01

We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de; Arsenijević, D.; Huang, H.

2015-11-09

This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ{sup (3)}/g{sub 0} of ∼4 × 10{sup −19} m{sup 3}/V{sup 3} are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carriermore » populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ{sup (3)}/g{sub 0} compared to quantum dash lasers.« less

SEMICONDUCTOR PHYSICS: Properties of the two- and three-dimensional quantum dot qubit

NASA Astrophysics Data System (ADS)

Shihua, Chen

2010-05-01

On the condition of electric-longitudinal-optical (LO) phonon strong coupling in both two- and three-dimensional parabolic quantum dots (QDs), we obtain the eigenenergies of the ground state (GS) and the first excited state (ES), the eigenfunctions of the GS and the first ES by using a variational method of Pekar type. This system in QD may be employed as a quantum system-quantum bit (qubit). When the electron is in the superposition state of the GS and the first ES, we obtain the time evolution of the electron density. The relations of both the electron probability density and the period of oscillation with the electric-LO phonon coupling strength and confinement length are discussed.

Nano-scale engineering using lead chalcogenide nanocrystals for opto-electronic applications

NASA Astrophysics Data System (ADS)

Xu, Fan

Colloidal quantum dots (QDs) or nanocrystals of inorganic semiconductors exhibit exceptional optoelectronic properties such as tunable band-gap, high absorption cross-section and narrow emission spectra. This thesis discusses the characterizations and physical properties of lead-chalcogenide nanocrystals, their assembly into more complex nanostructures and applications in solar cells and near-infrared light-emitting devices. In the first part of this work, we demonstrate that the band edge emission of PbS quantum dots can be tuned from the visible to the mid-infrared region through size control, while the self-attachment of PbS nanocrystals can lead to the formation of 1-D nanowires, 2-D quantum dot monolayers and 3-D quantum dot solids. In particular, the assembly of closely-packed quantum dot solids has attracted enormous attention. A series of distinctive optoelectronic properties has been observed, such as superb multiple exciton generation efficiencies, efficient hot-electron transfer and cold-exciton recycling. Since the surfactant determines the quantum dot surface passivation and inter dot electronic coupling, we examine the influence of different cross-linking surfactants on the optoelectronic properties of the quantum dot solids. Then, we discuss the ability to tune the quantum dot band-gap combined with the controllable assembly of lead-chalcogenide quantum dots, which opens new possibilities to engineer the properties of quantum dot solids. The PbS and PbSe quantum dot cascade structures and PbS/PbSe quantum dot heterojunctions are assembled using the layer-by-layer deposition method. We show that exciton funnelling and trap state-bound exciton recycling in the quantum dot cascade structure dramatically enhances the quantum dots photoluminescence. Moreover, we show that both type-I and type-II PbS/PbSe quantum dot heterojunctions can be assembled by carefully choosing the quantum dot sizes. In type-I heterojunctions, the excited electron-hole pairs tend to localize in narrower band-gap quantum dots, leading to significant photoluminescence enhancement. In contrast, the staggered energy bands in type-II heterojunctions lead to rapid exciton separation at the junctions that considerably quenches the photoluminescence. As such, this strategy can be fruitfully employed to enhance performances in nanocrystal-based photovoltaic devices. Using this approach, we achieve efficient PbS nanocrystal-based solar cells using an ITO/ TiO2/ PbS QDs/Au architecture, where a porous TiO2 nanowire network is employed as electron transporting layer. Our best heterojunction solar cells exhibit a decent short circuit current of 2.5 mA/cm2, a large open circuit voltage of 0.6 V and a power converting efficiency of 5.4 % under 8.5 mW/cm2 low-light illumination. On the other hand, nanocrystal-based near infrared LED devices are fabricated using a simple ITO-PbS QDs-Al device structure. There, the active quantum dot layer serves as both the electron- and hole-transporting layer. With appropriate surface chemistry treatment on quantum dots, a high-brightness near-infrared LED device is achieved.

Edge physics of the quantum spin Hall insulator from a quantum dot excited by optical absorption.

PubMed

Vasseur, Romain; Moore, Joel E

2014-04-11

The gapless edge modes of the quantum spin Hall insulator form a helical liquid in which the direction of motion along the edge is determined by the spin orientation of the electrons. In order to probe the Luttinger liquid physics of these edge states and their interaction with a magnetic (Kondo) impurity, we consider a setup where the helical liquid is tunnel coupled to a semiconductor quantum dot that is excited by optical absorption, thereby inducing an effective quantum quench of the tunneling. At low energy, the absorption spectrum is dominated by a power-law singularity. The corresponding exponent is directly related to the interaction strength (Luttinger parameter) and can be computed exactly using boundary conformal field theory thanks to the unique nature of the quantum spin Hall edge.

Quantum memory node based on a semiconductor double quantum dot in a laser-controlled optical resonator

NASA Astrophysics Data System (ADS)

Tsukanov, A. V.; Kateev, I. Yu

2017-08-01

The concept of a quantum node consisting of a memory qubit and a frequency convertor is proposed and analysed. The memory qubit is presented by a semiconductor four-level double quantum dot (DQD) placed in an optical microresonator (MR). The DQD contains an electron in the quantised part of the conduction band and the MR can be populated by a certain number of photons. The DQD and MR states are controlled be applying the laser and electrostatic fields. The difference between the telecommunication frequency of the photon (transport qubit) supplied to the system through a waveguide and the frequency of the electronic transition in the DQD is compensated for using an auxiliary element, i.e. a frequency convertor based on a single quantum dot (QD). This design allows the electron - photon state of the hybrid system to be controlled by an appropriate variation of the field parameters and the switching between resonance and nonresonance DQD and MR interaction regimes. As an example, a GaAs DQD placed in a microdisk MR is studied. A numerical technique for modelling an optical spectrum of a microdisk MR with an additional layer (AL) deposited on its surface is developed. Using this technique, the effect of the AL on the MR eigenmode properties is investigated and the possibility of tuning its frequency to the QD electronic transition frequency by depositing an AL on the disk surface is demonstrated.

Förster Resonance Energy Transfer between Quantum Dot Donors and Quantum Dot Acceptors

PubMed Central

Chou, Kenny F.; Dennis, Allison M.

2015-01-01

Förster (or fluorescence) resonance energy transfer amongst semiconductor quantum dots (QDs) is reviewed, with particular interest in biosensing applications. The unique optical properties of QDs provide certain advantages and also specific challenges with regards to sensor design, compared to other FRET systems. The brightness and photostability of QDs make them attractive for highly sensitive sensing and long-term, repetitive imaging applications, respectively, but the overlapping donor and acceptor excitation signals that arise when QDs serve as both the donor and acceptor lead to high background signals from direct excitation of the acceptor. The fundamentals of FRET within a nominally homogeneous QD population as well as energy transfer between two distinct colors of QDs are discussed. Examples of successful sensors are highlighted, as is cascading FRET, which can be used for solar harvesting. PMID:26057041

Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System.

PubMed

He, Yong; Zhu, Ka-Di

2017-06-20

In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

PubMed Central

He, Yong; Zhu, Ka-Di

2017-01-01

In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction. PMID:28632165

Sol-Gel Chemistry for Carbon Dots.

PubMed

Malfatti, Luca; Innocenzi, Plinio

2018-03-14

Carbon dots are an emerging class of carbon-based nanostructures produced by low-cost raw materials which exhibit a widely-tunable photoluminescence and a high quantum yield. The potential of these nanomaterials as a substitute of semiconductor quantum dots in optoelectronics and biomedicine is very high, however they need a customized chemistry to be integrated in host-guest systems or functionalized in core-shell structures. This review is focused on recent advances of the sol-gel chemistry applied to the C-dots technology. The surface modification, the fine tailoring of the chemical composition and the embedding into a complex nanostructured material are the main targets of combining sol-gel processing with C-dots chemistry. In addition, the synergistic effect of the sol-gel precursor combined with the C-dots contribute to modify the intrinsic chemo-physical properties of the dots, empowering the emission efficiency or enabling the tuning of the photoluminescence over a wide range of the visible spectrum. © 2018 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Boosting the efficiency of quantum dot sensitized solar cells through modulation of interfacial charge transfer.

PubMed

Kamat, Prashant V

2012-11-20

The demand for clean energy will require the design of nanostructure-based light-harvesting assemblies for the conversion of solar energy into chemical energy (solar fuels) and electrical energy (solar cells). Semiconductor nanocrystals serve as the building blocks for designing next generation solar cells, and metal chalcogenides (e.g., CdS, CdSe, PbS, and PbSe) are particularly useful for harnessing size-dependent optical and electronic properties in these nanostructures. This Account focuses on photoinduced electron transfer processes in quantum dot sensitized solar cells (QDSCs) and discusses strategies to overcome the limitations of various interfacial electron transfer processes. The heterojunction of two semiconductor nanocrystals with matched band energies (e.g., TiO(2) and CdSe) facilitates charge separation. The rate at which these separated charge carriers are driven toward opposing electrodes is a major factor that dictates the overall photocurrent generation efficiency. The hole transfer at the semiconductor remains a major bottleneck in QDSCs. For example, the rate constant for hole transfer is 2-3 orders of magnitude lower than the electron injection from excited CdSe into oxide (e.g., TiO(2)) semiconductor. Disparity between the electron and hole scavenging rate leads to further accumulation of holes within the CdSe QD and increases the rate of electron-hole recombination. To overcome the losses due to charge recombination processes at the interface, researchers need to accelerate electron and hole transport. The power conversion efficiency for liquid junction and solid state quantum dot solar cells, which is in the range of 5-6%, represents a significant advance toward effective utilization of nanomaterials for solar cells. The design of new semiconductor architectures could address many of the issues related to modulation of various charge transfer steps. With the resolution of those problems, the efficiencies of QDSCs could approach those of dye sensitized solar cells (DSSC) and organic photovoltaics.

Quantifying the cellular uptake of semiconductor quantum dot nanoparticles by analytical electron microscopy.

PubMed

Hondow, Nicole; Brown, M Rowan; Starborg, Tobias; Monteith, Alexander G; Brydson, Rik; Summers, Huw D; Rees, Paul; Brown, Andy

2016-02-01

Semiconductor quantum dot nanoparticles are in demand as optical biomarkers yet the cellular uptake process is not fully understood; quantification of numbers and the fate of internalized particles are still to be achieved. We have focussed on the characterization of cellular uptake of quantum dots using a combination of analytical electron microscopies because of the spatial resolution available to examine uptake at the nanoparticle level, using both imaging to locate particles and spectroscopy to confirm identity. In this study, commercially available quantum dots, CdSe/ZnS core/shell particles coated in peptides to target cellular uptake by endocytosis, have been investigated in terms of the agglomeration state in typical cell culture media, the traverse of particle agglomerates across U-2 OS cell membranes during endocytosis, the merging of endosomal vesicles during incubation of cells and in the correlation of imaging flow cytometry and transmission electron microscopy to measure the final nanoparticle dose internalized by the U-2 OS cells. We show that a combination of analytical transmission electron microscopy and serial block face scanning electron microscopy can provide a comprehensive description of the internalization of an initial exposure dose of nanoparticles by an endocytically active cell population and how the internalized, membrane bound nanoparticle load is processed by the cells. We present a stochastic model of an endosome merging process and show that this provides a data-driven modelling framework for the prediction of cellular uptake of engineered nanoparticles in general. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

NASA Astrophysics Data System (ADS)

King, Cameron; Schoenfield, Joshua; Calderón, M. J.; Koiller, Belita; Saraiva, André; Hu, Xuedong; Jiang, Hong-Wen; Friesen, Mark; Coppersmith, S. N.

Fabricating quantum dots in silicon metal-oxide-semiconductor (MOS) for quantum information processing applications is attractive because of the long spin coherence times in silicon and the potential for leveraging the massive investments that have been made for scaling of the technology for classical electronics. One obstacle that has impeded the development of electrically gated MOS singlet-triplet qubits is the lack of observed spin blockade, where the tunneling of a second electron into a dot is fast when the two-electron state is a singlet and slow when the two-electron state is a triplet, even in samples with large singlet-triplet energy splittings. We show that this is a commonly exhibited problem in MOS double quantum dots, and present evidence that the cause is stray positive charges in the oxide layer inducing accidental dots near the device's active region that allow spin blockade lifting. This work was supported by ARO (W911NF-12-1-0607), NSF (IIA-1132804), the Department of Defense under Contract No. H98230-15-C 0453, ARO (W911NF-14-1-0346), NSF (OISE-1132804), ONR (N00014-15-1-0029), and ARO (W911NF-12-R-0012).

Improving the Power Conversion Efficiency of Carbon Quantum Dot-Sensitized Solar Cells by Growing the Dots on a TiO₂ Photoanode In Situ.

PubMed

Zhang, Quanxin; Zhang, Geping; Sun, Xiaofeng; Yin, Keyang; Li, Hongguang

2017-05-31

Dye-sensitized solar cells (DSSCs) are highly promising since they can potentially solve global energy issues. The development of new photosensitizers is the key to fully realizing perspectives proposed to DSSCs. Being cheap and nontoxic, carbon quantum dots (CQDs) have emerged as attractive candidates for this purpose. However, current methodologies to build up CQD-sensitized solar cells (CQDSCs) result in an imperfect apparatus with extremely low power conversion efficiencies (PCEs). Herein, we present a simple strategy of growing carbon quantum dots (CQDs) onto TiO₂ surfaces in situ. The CQDs/TiO₂ hybridized photoanode was then used to construct solar cell with an improved PCE of 0.87%, which is higher than all of the reported CQDSCs adopting the simple post-adsorption method. This result indicates that an in situ growing strategy has great advantages in terms of optimizing the performance of CQDSCs. In addition, we have also found that the mechanisms dominating the performance of CQDSCs are different from those behind the solar cells using inorganic semiconductor quantum dots (ISQDs) as the photosensitizers, which re-confirms the conclusion that the characteristics of CQDs differ from those of ISQDs.

Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alvarado, Samuel R.; Guo, Yijun; Ruberu, T. Purnima A.

2014-03-15

The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductor–metal and semiconductor–metal oxide photocatalytic nanocomposites. In addition, we describemore » our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).« less

Nonplasmonic Hot-Electron Photocurrents from Mn-Doped Quantum Dots in Photoelectrochemical Cells.

PubMed

Dong, Yitong; Rossi, Daniel; Parobek, David; Son, Dong Hee

2016-03-03

We report the measurement of the hot-electron current in a photoelectrochemical cell constructed from a glass/ITO/Al2 O3 (ITO=indium tin oxide) electrode coated with Mn-doped quantum dots, where hot electrons with a large excess kinetic energy were produced through upconversion of the excitons into hot electron hole pairs under photoexcitation at 3 eV. In our recent study (J. Am. Chem. Soc. 2015, 137, 5549), we demonstrated the generation of hot electrons in Mn-doped II-VI semiconductor quantum dots and their usefulness in photocatalytic H2 production reaction, taking advantage of the more efficient charge transfer of hot electrons compared with band-edge electrons. Here, we show that hot electrons produced in Mn-doped CdS/ZnS quantum dots possess sufficient kinetic energy to overcome the energy barrier from a 5.4-7.5 nm thick Al2 O3 layer producing a hot-electron current in photoelectrochemical cell. This work demonstrates the possibility of harvesting hot electrons not only at the interface of the doped quantum dot surface, but also far away from it, thus taking advantage of the capability of hot electrons for long-range electron transfer across a thick energy barrier. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Long-range energy transfer in self-assembled quantum dot-DNA cascades

NASA Astrophysics Data System (ADS)

Goodman, Samuel M.; Siu, Albert; Singh, Vivek; Nagpal, Prashant

2015-11-01

The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient transport of energy across QD-DNA thin films.The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient transport of energy across QD-DNA thin films. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04778a

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Unveiling the composite structures of emissive consolidated p-i-n junction nanocells for white light emission.

PubMed

Lee, Kyu Seung; Shim, Jaeho; Lee, Hyunbok; Yim, Sang-Youp; Angadi, Basavaraj; Lim, Byungkwon; Son, Dong Ick

2018-06-08

Hybrid organic-Red-Green-Blue (RGB) color quantum dots were incorporated into consolidated p(polymer)-i(RGB quantum dots)-n(small molecules) junction structures to fabricate a single active layer for a light emitting diode device for white electroluminescence. The semiconductor RGB quantum dots, as an intrinsic material, were electrostatically bonded between functional groups of the p-type polymer organic material core surface and the n-type small molecular organic material shell surface. The ZnCdSe/ZnS and CdSe/ZnS quantum dots distributed uniformly and isotropically surrounding the polymer core which in turn was surrounded by small molecular organic materials. In the present study, we have identified the mechanisms of chemical synthesis and interactions of the p-i-n junction nanocell structure through modeling studies by DFT calculations. We have also investigated optical, structural and electrical properties along with the carrier transport mechanism of the light emitting diodes which have a single active layer of consolidated p-i-n junction nanocells for white electroluminescence.

Hybrid Molecule-Nanocrystal Photon Upconversion Across the Visible and Near-Infrared

DTIC Science & Technology

2015-07-10

applications in solar energy, biological imaging , and data storage. In this Letter, CdSe and PbSe semiconductor nanocrystals are combined with molecular...Goldschmidt, J. C. Absolute Upconversion Quantum Yield of β-NaYF4 Doped with Er3+ and External Quantum Efficiency of Upconverter Solar Cell Devices...C. Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell . Science 2011, 334, 1530−1533. (37) Choi, J.-H

Application of semiconductor fluorescent nanocrystals as optical probes for rapid early viral detection

NASA Astrophysics Data System (ADS)

Bentzen, Elizabeth L.; House, Frances; Tomlinson, Ian D.; Rosenthal, Sandra J.; Crowe, James E.; Wright, David D.

2005-04-01

Fluorescence is a tool widely employed in biological assays. Fluorescent semiconducting nanocrystals, quantum dots (QDs), are beginning to find their way into the tool box of many biologist, chemist and biochemist. These quantum dots are an attractive alternative to the traditional organic dyes due to their broad excitation spectra, narrow emission spectra and photostability. Non-specific binding is a frequently encountered problem with fluorescent labeling in biological assays. In these studies various cell lines were examined for non-specific binding to quantum dots. Evidence suggests that non-specific binding is related to cell type and, may be significantly reduced by functionalizing quantum dots with polyethyleneglycol ligands (PEG). In addition quantum dots were used to detect and monitor the progession of the viral glycoproteins ,F (fusion) and G (attachment), from Respiratory Syncytial Virus (RSV) in HEp-2 cells. RSV is the most common cause of lower respiratory tract infection in children worldwide and the most common cause of hospitalization of infants in the US. Antiviral therapy is available for treatment of RSV but is only effective if given within the first 48 hours of infection. Existing test methods require a virus level of at least 1000-fold of the amount needed for infection of most children and require several days to weeks to obtain results. The use of quantum dots may provide an early, rapid method for detection and provide insight into the trafficking of viral proteins during the course of infection.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

NASA Astrophysics Data System (ADS)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces.

PubMed

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-02

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Effective tuning of electron charge and spin distribution in a dot-ring nanostructure at the ZnO interface

NASA Astrophysics Data System (ADS)

Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk

2018-05-01

Electronic states and the Aharonov-Bohm effect in ZnO quantum dot-ring nanostructures containing few interacting electrons reveal several unique features. We have shown here that in contrast to the dot-rings made of conventional semiconductors, such as InAs or GaAs, the dot-rings in ZnO heterojunctions demonstrate several unique characteristics due to the unusual properties of quantum dots and rings in ZnO. In particular the energy spectra of the ZnO dot-ring and the Aharnov-Bohm oscillations are strongly dependant on the electron number in the dot or in the ring. Therefore even small changes of the confinement potential, sizes of the dot-ring or the magnetic field can drastically change the energy spectra and the behavior of Aharonov-Bohm oscillations in the system. Due to this interesting phenomena it is possible to effectively control with high accuracy the electron charge and spin distribution inside the dot-ring structure. This controlling can be achieved either by changing the magnetic field or the confinement potentials.

Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

NASA Technical Reports Server (NTRS)

Forbes, David; Sinharoy, Samar; Raffalle, Ryne; Weizer, Victor; Homann, Natalie; Valko, Thomas; Bartos,Nichole; Scheiman, David; Bailey, Sheila

2007-01-01

Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

Superlattices: problems and new opportunities, nanosolids

PubMed Central

2011-01-01

Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ever decreasing dimensions dictated by the technological advancements in nanometer regime. In recent years, the field has gone beyond semiconductors to metals and organic solids. Superlattice is simply a way of forming a uniform continuum for whatever purpose at hand. There are problems with doping, defect-induced random switching, and I/O involving quantum dots. However, new opportunities in component-based nanostructures may lead the field of endeavor to new heights. The all important translational symmetry of solids is relaxed and local symmetry is needed in nanosolids. PMID:21711653

Defect states and charge transport in quantum dot solids

DOE PAGES

Brawand, Nicholas P.; Goldey, Matthew B.; Vörös, Márton; ...

2017-01-16

Defects at the surface of semiconductor quantum dots (QDs) give rise to electronic states within the gap, which are detrimental to charge transport properties of QD devices. We investigated charge transport in silicon quantum dots with deep and shallow defect levels, using ab initio calculations and constrained density functional theory. We found that shallow defects may be more detrimental to charge transport than deep ones, with associated transfer rates differing by up to 5 orders of magnitude for the small dots (1-2 nm) considered here. Hence, our results indicate that the common assumption, that the ability of defects to trapmore » charges is determined by their position in the energy gap of the QD, is too simplistic, and our findings call for a reassessment of the role played by shallow defects in QD devices. Altogether, our results highlight the key importance of taking into account the atomistic structural properties of QD surfaces when investigating transport properties.« less

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

NASA Astrophysics Data System (ADS)

Zhang, Z. Y.; Oehler, A. E. H.; Resan, B.; Kurmulis, S.; Zhou, K. J.; Wang, Q.; Mangold, M.; Süedmeyer, T.; Keller, U.; Weingarten, K. J.; Hogg, R. A.

2012-06-01

High pulse repetition rate (>=10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ~2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

Injection Locking of a Semiconductor Double Quantum Dot Micromaser

PubMed Central

Liu, Y.-Y.; Stehlik, J.; Gullans, M. J.; Taylor, J. M.; Petta, J. R.

2016-01-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models. PMID:28127226

Phase locking of a semiconductor double-quantum-dot single-atom maser

NASA Astrophysics Data System (ADS)

Liu, Y.-Y.; Hartke, T. R.; Stehlik, J.; Petta, J. R.

2017-11-01

We experimentally study the phase stabilization of a semiconductor double-quantum-dot (DQD) single-atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise L =-99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ≈8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.

Injection Locking of a Semiconductor Double Quantum Dot Micromaser.

PubMed

Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R

2015-11-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varade, Vaibhav, E-mail: vaibhav.tvarade@gmail.com; Jagtap, Amardeep M.; Koteswara Rao, K. S. R.

2015-06-07

Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Φ{sub B} ≈ 0.68 eV) ismore » estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.« less

How Does a SILAR CdSe Film Grow? Tuning the Deposition Steps to Suppress Interfacial Charge Recombination in Solar Cells.

PubMed

Becker, Matthew A; Radich, James G; Bunker, Bruce A; Kamat, Prashant V

2014-05-01

Successive ionic layer adsorption and reaction (SILAR) is a popular method of depositing the metal chalcogenide semiconductor layer on the mesoscopic metal oxide films for designing quantum-dot-sensitized solar cells (QDSSCs) or extremely thin absorber (ETA) solar cells. While this deposition method exhibits higher loading of the light-absorbing semiconductor layer than direct adsorption of presynthesized colloidal quantum dots, the chemical identity of these nanostructures and the evolution of interfacial structure are poorly understood. We have now analyzed step-by-step SILAR deposition of CdSe films on mesoscopic TiO2 nanoparticle films using X-ray absorption near-edge structure analysis and probed the interfacial structure of these films. The film characteristics interestingly show dependence on the order in which the Cd and Se are deposited, and the CdSe-TiO2 interface is affected only during the first few cycles of deposition. Development of a SeO2 passivation layer in the SILAR-prepared films to form a TiO2/SeO2/CdSe junction facilitates an increase in photocurrents and power conversion efficiencies of quantum dot solar cells when these films are integrated as photoanodes in a photoelectrochemical solar cell.

Ordered nanoparticle arrays formed on engineered chaperonin protein templates

NASA Technical Reports Server (NTRS)

McMillan, R. Andrew; Paavola, Chad D.; Howard, Jeanie; Chan, Suzanne L.; Zaluzec, Nestor J.; Trent, Jonathan D.

2002-01-01

Traditional methods for fabricating nanoscale arrays are usually based on lithographic techniques. Alternative new approaches rely on the use of nanoscale templates made of synthetic or biological materials. Some proteins, for example, have been used to form ordered two-dimensional arrays. Here, we fabricated nanoscale ordered arrays of metal and semiconductor quantum dots by binding preformed nanoparticles onto crystalline protein templates made from genetically engineered hollow double-ring structures called chaperonins. Using structural information as a guide, a thermostable recombinant chaperonin subunit was modified to assemble into chaperonins with either 3 nm or 9 nm apical pores surrounded by chemically reactive thiols. These engineered chaperonins were crystallized into two-dimensional templates up to 20 microm in diameter. The periodic solvent-exposed thiols within these crystalline templates were used to size-selectively bind and organize either gold (1.4, 5 or 10nm) or CdSe-ZnS semiconductor (4.5 nm) quantum dots into arrays. The order within the arrays was defined by the lattice of the underlying protein crystal. By combining the self-assembling properties of chaperonins with mutations guided by structural modelling, we demonstrate that quantum dots can be manipulated using modified chaperonins and organized into arrays for use in next-generation electronic and photonic devices.

ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

PubMed

Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

2017-04-25

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn 2 SnO 4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10 4 ), specific detectivity (up to 9.0 × 10 17 Jones), photoconductive gain (up to 1.1 × 10 7 ), fast response, and excellent stability. Compared with a pristine Zn 2 SnO 4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn 2 SnO 4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn 2 SnO 4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

Semiconductor Quantum Dots for Bioimaging and Biodiagnostic Applications

NASA Astrophysics Data System (ADS)

Kairdolf, Brad A.; Smith, Andrew M.; Stokes, Todd H.; Wang, May D.; Young, Andrew N.; Nie, Shuming

2013-06-01

Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.

Semiconductor quantum dots for bioimaging and biodiagnostic applications.

PubMed

Kairdolf, Brad A; Smith, Andrew M; Stokes, Todd H; Wang, May D; Young, Andrew N; Nie, Shuming

2013-01-01

Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.

Semiconductor Quantum Dots for Bioimaging and Biodiagnostic Applications

PubMed Central

Kairdolf, Brad A.; Smith, Andrew M.; Stokes, Todd H.; Wang, May D.; Young, Andrew N.; Nie, Shuming

2013-01-01

Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future. PMID:23527547

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Influence of the nuclear Zeeman effect on mode locking in pulsed semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Beugeling, Wouter; Uhrig, Götz S.; Anders, Frithjof B.

2017-09-01

The coherence of the electron spin in a semiconductor quantum dot is strongly enhanced by mode locking through nuclear focusing, where the synchronization of the electron spin to periodic pulsing is slowly transferred to the nuclear spins of the semiconductor material, mediated by the hyperfine interaction between these. The external magnetic field that drives the Larmor oscillations of the electron spin also subjects the nuclear spins to a Zeeman-like coupling, albeit a much weaker one. For typical magnetic fields used in experiments, the energy scale of the nuclear Zeeman effect is comparable to that of the hyperfine interaction, so that it is not negligible. In this work, we analyze the influence of the nuclear Zeeman effect on mode locking quantitatively. Within a perturbative framework, we calculate the Overhauser-field distribution after a prolonged period of pulsing. We find that the nuclear Zeeman effect can exchange resonant and nonresonant frequencies. We distinguish between models with a single type and with multiple types of nuclei. For the latter case, the positions of the resonances depend on the individual g factors, rather than on the average value.

Multifunctional quantum dots and liposome complexes in drug delivery

PubMed Central

Wang, Qi; Chao, Yimin

2018-01-01

Incorporating both diagnostic and therapeutic functions into a single nanoscale system is an effective modern drug delivery strategy. Combining liposomes with semiconductor quantum dots (QDs) has great potential to achieve such dual functions, referred to in this review as a liposomal QD hybrid system (L-QD). Here we review the recent literature dealing with the design and application of L-QD for advances in bio-imaging and drug delivery. After a summary of L-QD synthesis processes and evaluation of their properties, we will focus on their multifunctional applications, ranging from in vitro cell imaging to theranostic drug delivery approaches. PMID:28866655

Multifunctional quantum dots and liposome complexes in drug delivery.

PubMed

Wang, Qi; Chao, Yi-Min

2017-09-03

Incorporating both diagnostic and therapeutic functions into a single nanoscale system is an effective modern drug delivery strategy. Combining liposomes with semiconductor quantum dots (QDs) has great potential to achieve such dual functions, referred to in this review as a liposomal QD hybrid system (L-QD). Here we review the recent literature dealing with the design and application of L-QD for advances in bio-imaging and drug delivery. After a summary of L-QD synthesis processes and evaluation of their properties, we will focus on their multifunctional applications, ranging from in vitro cell imaging to theranostic drug delivery approaches.

Ultrafast lattice dynamics in lead selenide quantum dot induced by laser excitation

DOE PAGES

Wang, Xuan; Rahmani, Hamidreza; Zhou, Jun; ...

2016-10-10

We directly monitored the lattice dynamics in PbSe quantum dots induced by laser excitation using ultrafast electron di raction. The energy relaxation between the carriers and the lattice took place within 10 ps, showing no evidence of any signi cant phonon bottleneck e ect. Meanwhile, the lattice dilation exhibited some unusual features that could not be explained by the available mechanisms of photon- induced acoustic vibrations in semiconductors alone. The heat transport between the QDs and the substrate deviates signi cantly from Fourier's Law, which opens questions about the heat transfer under nonequilibrium conditions in nanoscale materials.

Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.

2005-07-01

Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.

Graphene oxide quantum dot-sensitized porous titanium dioxide microsphere: Visible-light-driven photocatalyst based on energy band engineering.

PubMed

Zhang, Yu; Qi, Fuyuan; Li, Ying; Zhou, Xin; Sun, Hongfeng; Zhang, Wei; Liu, Daliang; Song, Xi-Ming

2017-07-15

We report a novel graphene oxide quantum dot (GOQD)-sensitized porous TiO 2 microsphere for efficient photoelectric conversion. Electro-chemical analysis along with the Mott-Schottky equation reveals conductivity type and energy band structure of the two semiconductors. Based on their energy band structures, visible light-induced electrons can transfer from the p-type GOQD to the n-type TiO 2 . Enhanced photocurrent and photocatalytic activity in visible light further confirm the enhanced separation of electrons and holes in the nanocomposite. Copyright © 2017 Elsevier Inc. All rights reserved.

Wigner molecules in carbon-nanotube quantum dots

NASA Astrophysics Data System (ADS)

Secchi, Andrea; Rontani, Massimo

2010-07-01

We demonstrate that electrons in quantum dots defined by electrostatic gates in semiconductor nanotubes freeze orderly in space realizing a “Wigner molecule.” Our exact diagonalization calculations uncover the features of the electron molecule, which may be accessed by tunneling spectroscopy—indeed some of them have already been observed by Deshpande and Bockrath [Nat. Phys. 4, 314 (2008)]10.1038/nphys895. We show that numerical results are satisfactorily reproduced by a simple ansatz vibrational wave function: electrons have localized wave functions, like nuclei in an ordinary molecule, whereas low-energy excitations are collective vibrations of electrons around their equilibrium positions.

Ultrafast lattice dynamics in lead selenide quantum dot induced by laser excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xuan; Rahmani, Hamidreza; Zhou, Jun

We directly monitored the lattice dynamics in PbSe quantum dots induced by laser excitation using ultrafast electron di raction. The energy relaxation between the carriers and the lattice took place within 10 ps, showing no evidence of any signi cant phonon bottleneck e ect. Meanwhile, the lattice dilation exhibited some unusual features that could not be explained by the available mechanisms of photon- induced acoustic vibrations in semiconductors alone. The heat transport between the QDs and the substrate deviates signi cantly from Fourier's Law, which opens questions about the heat transfer under nonequilibrium conditions in nanoscale materials.

Static strain tuning of quantum dots embedded in a photonic wire

NASA Astrophysics Data System (ADS)

Tumanov, D.; Vaish, N.; Nguyen, H. A.; Curé, Y.; Gérard, J.-M.; Claudon, J.; Donatini, F.; Poizat, J.-Ph.

2018-03-01

We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 25 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance.

Microfluidic Technology: Uncovering the Mechanisms of Nanocrystal Nucleation and Growth.

PubMed

Lignos, Ioannis; Maceiczyk, Richard; deMello, Andrew J

2017-05-16

The controlled and reproducible formation of colloidal semiconductor nanocrystals (or quantum dots) is of central importance in nanoscale science and technology. The tunable size- and shape-dependent properties of such materials make them ideal candidates for the development of efficient and low-cost displays, solar cells, light-emitting devices, and catalysts. The formidable difficulties associated with the macroscale preparation of semiconductor nanocrystals (possessing bespoke optical and chemical properties) result from the fact that underlying reaction mechanisms are complex and that the reactive environment is difficult to control. Automated microfluidic reactors coupled with monitoring systems and optimization algorithms aim to elucidate complex reaction mechanisms that govern both nucleation and growth of nanocrystals. Such platforms are ideally suited for the efficient optimization of reaction parameters, assuring the reproducible synthesis of nanocrystals with user-defined properties. This Account aims to inform the nanomaterials community about how microfluidic technologies can supplement flask experimentation for the ensemble investigation of formation mechanisms and design of semiconductor nanocrystals. We present selected studies outlining the preparation of quantum dots using microfluidic systems with integrated analytics. Such microfluidic reaction systems leverage the ability to extract real-time information regarding optical, structural, and compositional characteristics of quantum dots during nucleation and growth stages. The Account further highlights our recent research activities focused on the development and application of droplet-based microfluidics with integrated optical detection systems for the efficient and rapid screening of reaction conditions and a better understanding of the mechanisms of quantum dot synthesis. We describe the features and operation of fully automated microfluidic reactors and their subsequent application to high-throughput parametric screening of metal chalcogenides (CdSe, PbS, PbSe, CdSeTe), ternary and core/shell heavy metal-free quantum dots (CuInS 2 , CuInS 2 /ZnS), and all-inorganic perovskite nanocrystals (CsPbX 3 , X = Cl, Br, I) syntheses. Critically, concurrent absorption and photoluminescence measurements on millisecond to second time scales allow the extraction of basic parameters governing nanocrystal formation. Moreover, experimental data obtained from such microfluidic platforms can be directly supported by theoretical models of nucleation and growth. To this end, we also describe the use of metamodeling algorithms able to accurately predict optimized conditions of CdSe synthesis using a minimal number of sample parameters. Importantly, we discuss future challenges that must be addressed before microfluidic technologies are in a position to be widely adopted for the on-demand formation of nanocrystals. From a technology perspective, these challenges include the development of novel engineering platforms for the formation of complex architectures, the integration of monitoring systems able to harvest photophysical and structural information, the incorporation of continuous purification systems, and the application of optimization algorithms to multicomponent quantum dot systems.

Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ma, Jiaju; Zhang, Yang; Wang, Xiaoxin; Ying, Lei; Masoodian, Saleh; Wang, Zhiyuan; Starkey, Dakota A.; Deng, Wei; Kumar, Rahul; Wu, Yang; Ghetmiri, Seyed Amir; Yu, Zongfu; Yu, Shui-Qing; Salamo, Gregory J.; Fossum, Eric R.; Liu, Jifeng

2017-05-01

This research investigates the fundamental limits and trade-space of quantum semiconductor photodetectors using the Schrödinger equation and the laws of thermodynamics.We envision that, to optimize the metrics of single photon detection, it is critical to maximize the optical absorption in the minimal volume and minimize the carrier transit process simultaneously. Integration of photon management with quantum charge transport/redistribution upon optical excitation can be engineered to maximize the quantum efficiency (QE) and data rate and minimize timing jitter at the same time. Due to the ultra-low capacitance of these quantum devices, even a single photoelectron transfer can induce a notable change in the voltage, enabling non-avalanche single photon detection at room temperature as has been recently demonstrated in Si quanta image sensors (QIS). In this research, uniform III-V quantum dots (QDs) and Si QIS are used as model systems to test the theory experimentally. Based on the fundamental understanding, we also propose proof-of-concept, photon-managed quantum capacitance photodetectors. Built upon the concepts of QIS and single electron transistor (SET), this novel device structure provides a model system to synergistically test the fundamental limits and tradespace predicted by the theory for semiconductor detectors. This project is sponsored under DARPA/ARO's DETECT Program: Fundamental Limits of Quantum Semiconductor Photodetectors.

Broadband Epsilon-near-Zero Reflectors Enhance the Quantum Efficiency of Thin Solar Cells at Visible and Infrared Wavelengths.

PubMed

Labelle, A J; Bonifazi, M; Tian, Y; Wong, C; Hoogland, S; Favraud, G; Walters, G; Sutherland, B; Liu, M; Li, Jun; Zhang, Xixiang; Kelley, S O; Sargent, E H; Fratalocchi, A

2017-02-15

The engineering of broadband absorbers to harvest white light in thin-film semiconductors is a major challenge in developing renewable materials for energy harvesting. Many solution-processed materials with high manufacturability and low cost, such as semiconductor quantum dots, require the use of film structures with thicknesses on the order of 1 μm to absorb incoming photons completely. The electron transport lengths in these media, however, are 1 order of magnitude smaller than this length, hampering further progress with this platform. Herein, we show that, by engineering suitably disordered nanoplasmonic structures, we have created a new class of dispersionless epsilon-near-zero composite materials that efficiently harness white light. Our nanostructures localize light in the dielectric region outside the epsilon-near-zero material with characteristic lengths of 10-100 nm, resulting in an efficient system for harvesting broadband light when a thin absorptive film is deposited on top of the structure. By using a combination of theory and experiments, we demonstrate that ultrathin layers down to 50 nm of colloidal quantum dots deposited atop the epsilon-near-zero material show an increase in broadband absorption ranging from 200% to 500% compared to a planar structure of the same colloidal quantum-dot-absorber average thickness. When the epsilon-near-zero nanostructures were used in an energy-harvesting module, we observed a spectrally averaged 170% broadband increase in the external quantum efficiency of the device, measured at wavelengths between 400 and 1200 nm. Atomic force microscopy and photoluminescence excitation measurements demonstrate that the properties of these epsilon-near-zero structures apply to general metals and could be used to enhance the near-field absorption of semiconductor structures more widely. We have developed an inexpensive electrochemical deposition process that enables scaled-up production of this nanomaterial for large-scale energy-harvesting applications.

Tuning Optoelectronic Properties of the Graphene-Based Quantum Dots C16- xSi xH10 Family.

PubMed

Ramadan, F-Z; Ouarrad, H; Drissi, L B

2018-06-07

The electronic and optical properties of graphene-based quantum dots (QDs) are investigated using DFT and many-body perturbation theory. Formation energy, hardeness and electrophilicity show that all structures, from pyrene to silicene QD passing through 15 CSi QD configurations, are energetically and chemically stable. It is also found that they are reactive which implies their favorable character for the possible electronic transport and conductivity. The electronic and optical properties are very sensitive to the number and position of the substituted silicon atoms as well as the directions of the light polarization. Moreover, quantum confinement effects make the exciton binding energy of CSi quantum dots larger than those of their higher dimensional allotropes such as silicene, graphene, and SiC sheet and nanotube. It is also higher those of other shapes of quantum dots like hexagonal graphene QDs and can be tailored from the ultraviolet region to the visible one. The values of the singlet-triplet splitting determined for the X- and Y-light polarized indicate that all configurations have a high fluorescence quantum yield compared to the yield of typical semiconductors, which makes them very promising for various applications such as the light-emitting diode material and nanomedicine.

Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions

NASA Astrophysics Data System (ADS)

Zopf, Michael; Keil, Robert; Chen, Yan; HöFer, Bianca; Zhang, Jiaxiang; Ding, Fei; Schmidt, Oliver G.

Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon pairs. Despite remarkable progress in the last twenty years, many challenges still remain for this material, such as the extremely low yield (< 1% quantum dots can emit entangled photons), the low degree of entanglement, and the large wavelength distribution. Here we show that, with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble (close to 100%) of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement (fidelity up to F=0.91, with a record high concurrence C=0.90), and ultra-narrow wavelength distribution at rubidium transitions. Therefore, a solid-state quantum repeater - among many other key enabling quantum photonic elements - can be practically implemented with this new material. Financially supported by BMBF Q.Com-H (16KIS0106) and the Euro- pean Union Seventh Framework Programme 209 (FP7/2007-2013) under Grant Agreement No. 601126 210 (HANAS).

Entangling distant resonant exchange qubits via circuit quantum electrodynamics

NASA Astrophysics Data System (ADS)

Srinivasa, V.; Taylor, J. M.; Tahan, Charles

2016-11-01

We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-mediated two-qubit entangling gates in both dispersive and resonant regimes of interaction. We calculate entangling gate fidelities as well as the rate of relaxation via phonons for resonant exchange qubits in silicon triple dots and show that such an implementation is particularly well suited to achieving the strong coupling regime. Our approach combines the favorable coherence properties of encoded spin qubits in silicon with the rapid and robust long-range entanglement provided by circuit QED systems.

Giant photocurrent enhancement by transition metal doping in quantum dot sensitized solar cells

NASA Astrophysics Data System (ADS)

Rimal, Gaurab; Pimachev, Artem K.; Yost, Andrew J.; Poudyal, Uma; Maloney, Scott; Wang, Wenyong; Chien, TeYu; Dahnovsky, Yuri; Tang, Jinke

2016-09-01

A huge enhancement in the incident photon-to-current efficiency of PbS quantum dot (QD) sensitized solar cells by manganese doping is observed. In the presence of Mn dopants with relatively small concentration (4 at. %), the photoelectric current increases by an average of 300% (up to 700%). This effect cannot be explained by the light absorption mechanism because both the experimental and theoretical absorption spectra demonstrate several times decreases in the absorption coefficient. To explain such dramatic increase in the photocurrent we propose the electron tunneling mechanism from the LUMO of the QD excited state to the Zn2SnO4 (ZTO) semiconductor photoanode. This change is due to the presence of the Mn instead of Pb atom at the QD/ZTO interface. The ab initio calculations confirm this mechanism. This work proposes an alternative route for a significant improvement of the efficiency for quantum dot sensitized solar cells.

CdSe quantum dot sensitized solar cells. Shuttling electrons through stacked carbon nanocups.

PubMed

Farrow, Blake; Kamat, Prashant V

2009-08-12

The charge separation between excited CdSe semiconductor quantum dots and stacked-cup carbon nanotubes (SCCNTs) has been successfully tapped to generate photocurrent in a quantum dot sensitized solar cell (QDSC). By employing an electrophoretic deposition technique we have cast SCCNT-CdSe composite films on optically transparent electrodes (OTEs). The quenching of CdSe emission, as well as transient absorption measurements, confirms ultrafast electron transfer to SCCNTs. The rate constant for electron transfer increases from 9.51 x 10(9) s(-1) to 7.04 x 10(10) s(-1) as we decrease the size of CdSe nanoparticles from 4.5 to 3 nm. The ability of SCCNTs to collect and transport electrons from excited CdSe has been established from photocurrent measurements. The morphological and excited state properties of SCCNT-CdSe composites demonstrate their usefulness in energy conversion devices.

Linearly polarized light emission from quantum dots with plasmonic nanoantenna arrays.

PubMed

Ren, Mengxin; Chen, Mo; Wu, Wei; Zhang, Lihui; Liu, Junku; Pi, Biao; Zhang, Xinzheng; Li, Qunqing; Fan, Shoushan; Xu, Jingjun

2015-05-13

Polarizers provide convenience in generating polarized light, meanwhile their adoption raises problems of extra weight, cost, and energy loss. Aiming to realize polarizer-free polarized light sources, herein, we present a plasmonic approach to achieve direct generation of linearly polarized optical waves at the nanometer scale. Periodic slot nanoantenna arrays are fabricated, which are driven by the transition dipole moments of luminescent semiconductor quantum dots. By harnessing interactions between quantum dots and scattered fields from the nanoantennas, spontaneous emission with a high degree of linear polarization is achieved from such hybrid antenna system with polarization perpendicular to antenna slot. We also demonstrate that the polarization is engineerable in aspects of both spectrum and magnitude by tailoring plasmonic resonance of the antenna arrays. Our findings will establish a basis for the development of innovative polarized light-emitting devices, which are useful in optical displays, spectroscopic techniques, optical telecommunications, and so forth.

CdTe and CdSe Quantum Dots Cytotoxicity: A Comparative Study on Microorganisms

PubMed Central

Gomes, Suzete A.O.; Vieira, Cecilia Stahl; Almeida, Diogo B.; Santos-Mallet, Jacenir R.; Menna-Barreto, Rubem F. S.; Cesar, Carlos L.; Feder, Denise

2011-01-01

Quantum dots (QDs) are colloidal semiconductor nanocrystals of a few nanometers in diameter, being their size and shape controlled during the synthesis. They are synthesized from atoms of group II–VI or III–V of the periodic table, such as cadmium telluride (CdTe) or cadmium selenium (CdSe) forming nanoparticles with fluorescent characteristics superior to current fluorophores. The excellent optical characteristics of quantum dots make them applied widely in the field of life sciences. Cellular uptake of QDs, location and translocation as well as any biological consequence, such as cytotoxicity, stimulated a lot of scientific research in this area. Several studies pointed to the cytotoxic effect against micoorganisms. In this mini-review, we overviewed the synthesis and optical properties of QDs, and its advantages and bioapplications in the studies about microorganisms such as protozoa, bacteria, fungi and virus. PMID:22247686

Far-field nanoscopy on a semiconductor quantum dot via a rapid-adiabatic-passage-based switch

NASA Astrophysics Data System (ADS)

Kaldewey, Timo; Kuhlmann, Andreas V.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.; Warburton, Richard J.

2018-02-01

The diffraction limit prevents a conventional optical microscope from imaging at the nanoscale. However, nanoscale imaging of molecules is possible by exploiting an intensity-dependent molecular switch1-3. This switch is translated into a microscopy scheme, stimulated emission depletion microscopy4-7. Variants on this scheme exist3,8-13, yet all exploit an incoherent response to the lasers. We present a scheme that relies on a coherent response to a laser. Quantum control of a two-level system proceeds via rapid adiabatic passage, an ideal molecular switch. We implement this scheme on an ensemble of quantum dots. Each quantum dot results in a bright spot in the image with extent down to 30 nm (λ/31). There is no significant loss of intensity with respect to confocal microscopy, resulting in a factor of 10 improvement in emitter position determination. The experiments establish rapid adiabatic passage as a versatile tool in the super-resolution toolbox.

Biosynthesis of fluorescent CdS nanocrystals with semiconductor properties: Comparison of microbial and plant production systems.

PubMed

Al-Shalabi, Zahwa; Doran, Pauline M

2016-04-10

This study investigated fission yeast (Schizosaccharomyces pombe) and hairy roots of tomato (Solanum lycopersicum) as in vitro production vehicles for biological synthesis of CdS quantum dots. Cd added during the mid-growth phase of the cultures was detoxified within the biomass into inorganic sulphide-containing complexes with the quantum confinement properties of semiconductor nanocrystals. Significant differences were found between the two host systems in terms of nanoparticle production kinetics, yield and quality. The much slower growth rate of hairy roots compared with yeast is a disadvantage for commercial scaled-up production. Nanoparticle extraction from the biomass was less effective for the roots: 19% of the Cd present in the hairy roots was recovered after extraction compared with 34% for the yeast. The overall yield of CdS quantum dots was also lower for the roots: relative to the amount of Cd taken up into the biomass, 8.5% was recovered in yeast gel filtration fractions exhibiting quantum dot properties whereas the result for hairy roots was only 0.99%. Yeast-produced CdS crystallites were somewhat smaller with diameters of approximately 2-6 nm compared with those of 4-10nm obtained from the roots. The average ratio of inorganic sulphide to Cd for the purified and size-fractionated particles was 0.44 for the yeast and 1.6 for the hairy roots. Despite the limitations associated with hairy roots in terms of culture kinetics and product yield, this system produced CdS nanoparticles with enhanced photostability and 3.7-13-fold higher fluorescence quantum efficiency compared with those generated by yeast. This work demonstrates that the choice of cellular host can have a significant effect on nanoparticle functional properties as well as on the bioprocessing aspects of biological quantum dot synthesis. Copyright © 2016 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashchenko, A. A.; Goriachiy, D. O., E-mail: goryachii@phystech.edu; Vitukhnovsky, A. G.

Experimental samples of organic light-emitting diodes with transport layers based on polythienothiophenes and using CdSe/CdS/ZnS semiconductor quantum dots with an internal quantum efficiency up to 85% in the emitting layer are investigated. It is shown that solubility and film-forming properties are key for using polythienothiophenes in light-emitting diodes. The most promising polythienothiophenes are identified on the basis of the results obtained.

A two-qubit logic gate in silicon.

PubMed

Veldhorst, M; Yang, C H; Hwang, J C C; Huang, W; Dehollain, J P; Muhonen, J T; Simmons, S; Laucht, A; Hudson, F E; Itoh, K M; Morello, A; Dzurak, A S

2015-10-15

Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates. Many physical realizations of qubits exist, including single photons, trapped ions, superconducting circuits, single defects or atoms in diamond and silicon, and semiconductor quantum dots, with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing. Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits, owing to the difficulties of coupling qubits and dephasing in semiconductor systems. Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon and is realized by performing single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss-DiVincenzo proposal. We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.

Deterministic and robust generation of single photons from a single quantum dot with 99.5% indistinguishability using adiabatic rapid passage.

PubMed

Wei, Yu-Jia; He, Yu-Ming; Chen, Ming-Cheng; Hu, Yi-Nan; He, Yu; Wu, Dian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2014-11-12

Single photons are attractive candidates of quantum bits (qubits) for quantum computation and are the best messengers in quantum networks. Future scalable, fault-tolerant photonic quantum technologies demand both stringently high levels of photon indistinguishability and generation efficiency. Here, we demonstrate deterministic and robust generation of pulsed resonance fluorescence single photons from a single semiconductor quantum dot using adiabatic rapid passage, a method robust against fluctuation of driving pulse area and dipole moments of solid-state emitters. The emitted photons are background-free, have a vanishing two-photon emission probability of 0.3% and a raw (corrected) two-photon Hong-Ou-Mandel interference visibility of 97.9% (99.5%), reaching a precision that places single photons at the threshold for fault-tolerant surface-code quantum computing. This single-photon source can be readily scaled up to multiphoton entanglement and used for quantum metrology, boson sampling, and linear optical quantum computing.

Ultrafast Room-Temperature Single Photon Emission from Quantum Dots Coupled to Plasmonic Nanocavities.

PubMed

Hoang, Thang B; Akselrod, Gleb M; Mikkelsen, Maiken H

2016-01-13

Efficient and bright single photon sources at room temperature are critical components for quantum information systems such as quantum key distribution, quantum state teleportation, and quantum computation. However, the intrinsic radiative lifetime of quantum emitters is typically ∼10 ns, which severely limits the maximum single photon emission rate and thus entanglement rates. Here, we demonstrate the regime of ultrafast spontaneous emission (∼10 ps) from a single quantum emitter coupled to a plasmonic nanocavity at room temperature. The nanocavity integrated with a single colloidal semiconductor quantum dot produces a 540-fold decrease in the emission lifetime and a simultaneous 1900-fold increase in the total emission intensity. At the same time, the nanocavity acts as a highly efficient optical antenna directing the emission into a single lobe normal to the surface. This plasmonic platform is a versatile geometry into which a variety of other quantum emitters, such as crystal color centers, can be integrated for directional, room-temperature single photon emission rates exceeding 80 GHz.

Effect of Nitrogen Doping Level on the Performance of N-Doped Carbon Quantum Dot/TiO2 Composites for Photocatalytic Hydrogen Evolution.

PubMed

Shi, Run; Li, Zi; Yu, Huijun; Shang, Lu; Zhou, Chao; Waterhouse, Geoffrey I N; Wu, Li-Zhu; Zhang, Tierui

2017-11-23

Carbon quantum dots (CQDs) have attracted widespread interest for photocatalytic applications, owing to their low cost and excellent electron donor/acceptor properties. However, their advancement as visible-light photosensitizers in CQDs/semiconductor nanocomposites is currently impaired by their poor quantum yields (QYs). Herein, we describe the successful fabrication of a series of nitrogen-doped CQDs (NCDs) with N/C atomic ratios ranging from 0.14-0.30. NCDs with the highest N-doping level afforded a remarkable external QY of 66.8 % at 360 nm, and outstanding electron transfer properties and photosensitization efficiencies when physically adsorbed on P25 TiO 2 . A NCDs/P25-TiO 2 hybrid demonstrated excellent performance for hydrogen evolution in aqueous methanol under both UV and visible-light illumination relative to pristine P25 TiO 2 . Controlled nitrogen doping of CQDs therefore represents a very effective strategy for optimizing the performance of CQDs/semiconductor hybrid photocatalysts. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coupling of Excitons and Discrete Acoustic Phonons in Vibrationally Isolated Quantum Emitters.

PubMed

Werschler, Florian; Hinz, Christopher; Froning, Florian; Gumbsheimer, Pascal; Haase, Johannes; Negele, Carla; de Roo, Tjaard; Mecking, Stefan; Leitenstorfer, Alfred; Seletskiy, Denis V

2016-09-14

The photoluminescence emission by mesoscopic condensed matter is ultimately dictated by the fine-structure splitting of the fundamental exciton into optically allowed and dipole-forbidden states. In epitaxially grown semiconductor quantum dots, nonradiative equilibration between the fine-structure levels is mediated by bulk acoustic phonons, resulting in asymmetric spectral broadening of the excitonic luminescence. In isolated colloidal quantum dots, spatial confinement of the vibrational motion is expected to give rise to an interplay between the quantized electronic and phononic degrees of freedom. In most cases, however, zero-dimensional colloidal nanocrystals are strongly coupled to the substrate such that the charge relaxation processes are still effectively governed by the bulk properties. Here we show that encapsulation of single colloidal CdSe/CdS nanocrystals into individual organic polymer shells allows for systematic vibrational decoupling of the semiconductor nanospheres from the surroundings. In contrast to epitaxially grown quantum dots, simultaneous quantization of both electronic and vibrational degrees of freedom results in a series of strong and narrow acoustic phonon sidebands observed in the photoluminescence. Furthermore, an individual analysis of more than 200 compound particles reveals that enhancement or suppression of the radiative properties of the fundamental exciton is controlled by the interaction between fine-structure states via the discrete vibrational modes. For the first time, pronounced resonances in the scattering rate between the fine-structure states are directly observed, in good agreement with a quantum mechanical model. The unambiguous assignment of mediating acoustic modes to the observed scattering resonances complements the experimental findings. Thus, our results form an attractive basis for future studies on subterahertz quantum opto-mechanics and efficient laser cooling at the nanoscale.

Colloidal-Quantum-Dot Ring Lasers with Active Color Control.

PubMed

le Feber, Boris; Prins, Ferry; De Leo, Eva; Rabouw, Freddy T; Norris, David J

2018-02-14

To improve the photophysical performance of colloidal quantum dots for laser applications, sophisticated core/shell geometries have been developed. Typically, a wider bandgap semiconductor is added as a shell to enhance the gain from the quantum-dot core. This shell is designed to electronically isolate the core, funnel excitons to it, and reduce nonradiative Auger recombination. However, the shell could also potentially provide a secondary source of gain, leading to further versatility in these materials. Here we develop high-quality quantum-dot ring lasers that not only exhibit lasing from both the core and the shell but also the ability to switch between them. We fabricate ring resonators (with quality factors up to ∼2500) consisting only of CdSe/CdS/ZnS core/shell/shell quantum dots using a simple template-stripping process. We then examine lasing as a function of the optical excitation power and ring radius. In resonators with quality factors >1000, excitons in the CdSe cores lead to red lasing with thresholds at ∼25 μJ/cm 2 . With increasing power, green lasing from the CdS shell emerges (>100 μJ/cm 2 ) and then the red lasing begins to disappear (>250 μJ/cm 2 ). We present a rate-equation model that can explain this color switching as a competition between exciton localization into the core and stimulated emission from excitons in the shell. Moreover, by lowering the quality factor of the cavity we can engineer the device to exhibit only green lasing. The mechanism demonstrated here provides a potential route toward color-switchable quantum-dot lasers.

High-fidelity gates in quantum dot spin qubits

PubMed Central

Koh, Teck Seng; Coppersmith, S. N.; Friesen, Mark

2013-01-01

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet–triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning ϵ, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound that is specific to the qubit-gate combination. We show that similar gate fidelities should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins. PMID:24255105

Biocompatibility of quantum dots (CdSe/ZnS ) in human amniotic membrane-derived mesenchymal stem cells in vitro.

PubMed

Wang, Gongping; Zeng, Guangwei; Wang, Caie; Wang, Huasheng; Yang, Bo; Guan, Fangxia; Li, Dongpeng; Feng, Xiaoshan

2015-06-01

Amniotic membrane-derived mesenchymal stem cells (hAM-dMSCs) are a potential source of mesenchymal stem cells which could be used to repair skin damage. The use of mesenchymal stem cells to repair skin damage requires safe, effective and biocompatible agents to evaluate the effectiveness of the result. Quantum dots (QDs) composed of CdSe/ZnS are semiconductor nanocrystals with broad excitation and narrow emission spectra, which have been considered as a new chemical and fluorescent substance for non-invasively labeling different cells in vitro and in vivo. This study investigated the cytotoxic effects of QDs on hAM-dMSCs at different times following labeling. Using 0.75, 1.5 and 3.0 μL between quantum dots, labeled human amniotic mesenchymal stem cells were collected on days 1, 2 and 4 and observed morphological changes, performed an MTT cell growth assay and flow cytometry for mesenchymal stem cells molecular markers. Quantum dot concentration 0.75 μg/mL labeled under a fluorescence microscope, cell morphology was observed, The MTT assay showed cells in the proliferative phase. Flow cytometry expression CD29, CD31, CD34, CD44, CD90, CD105 and CD106. Within a certain range of concentrations between quantum dots labeled human amniotic mesenchymal stem cells has good biocompatibility.

Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

NASA Astrophysics Data System (ADS)

Thibert, Arthur Joseph, III

Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh laboratory (UCD). The measured signals were decomposed into the constituent dynamics of three transient populations: hot tightly bound excitons, relaxed tightly bound excitons, and separated trapped carriers (holes and electrons). The influenes of three external factors affecting the observed dynamics were explored: (1) excitation wavelength, (2) excitation fluence, and (3) presence of the hole scavenger HS -. Both higher-energy excitation photons and higher-intensity excitation induce slower relaxation of charge carriers to the band edge due to the need to dissipate excess excitation energy. Nonlinear decay kinetics of the relaxed exciton population is observed and demonstrated to arise from bimolecular trapping of excitons with low-density trap sites located at CdSe NR surface sites instead of the commonly resolved multiparticle Auger recombination mechanism. This is supported by the observed linear excitation-fluence dependence of the trapped-carrier population that is n umerically simulated and found to deviate from the excitation fluence dependence expected of Auger recombination kinetics. Introducing hole scavenging HS- has a negligible effect on the exciton kinetics, including migration and dissociation, and instead passivates surface trap states to induce the rapid elimination of holes after exciton dissociation. This increases the lifetime of the reactive electron population and increases measured photocatalytic H2 generation activity. A broad (200 nm) and persistent (20 ps) stimulated emission observed in the tightly bound excitons suggests their potential use as broadband microlasers. In chapter 3 (JPCL, 2688, 2011), the photocatalytic H2O splitting activities of CdSe and CdSe/CdS core/shell quantum dots, which were also synthesized in the Osterloh laboratory (UCD) are contrasted. CdSe/CdS core/shell quantum dots constructed from 4.0 nm CdSe quantum dots are shown to be strongly active for visible-light-driven photocatalytic H2 evolution in 0.1M Na 2S/Na2SO3 solution with a turnover number of 9.94 after 5 h at 103.9 μmol/h. CdSe quantum dots themselves are only marginally active in 0.1 M Na2S/Na2SO3 solution with a turnover number of 1.10 after 5 h at 11.53 μmol/h, while CdSe quantum dots in pure H2O are found to be completely inactive. Broad-band transient absorption spectroscopy is used to elucidate the mechanisms that facilitate the enhancement in the CdSe core/shell quantum dots, which is attributed to passivation of surface-deep trap states with energies lying below the reduction potential necessary for H2O reduction. Thus, it is shown that surface trapping dynamics and energetics can be manipulated to dictate the photocatalytic activities of novel CdSe quantum dot based photocatalytic materials. Chapter 4 builds upon this work examining the differences in dynamics that occur upon passivation of water soluble CdZnS alloy cores with ZnS shells, which were produced in the Snee laboratory (UI Chicago), via 400 nm pump broadband probe ultrafast transient absorption spectroscopy, and global analysis modeling. We also examine the perturbation invoked on charge carrier dynamics caused by growing Pd nanoparticles on the CdZnS/ZnS shell surface in-situ and note the cyclical charge carrier transfer that takes place. Both the CdZnS core and CdZnS/ZnS core/shell quantum dots exhibit unusually long lived excited states (much > 8 ns) while the CdZnS/ZnS.Pd tandem core/shell quantum dots recover much quicker (~3 ns). Additionally, ultrafast excitation fluence dependencies are used to characterize Auger recombination and the presence of two different trap state populations observable in the visible spectrum. In chapter 5 (JACS, 20664, 2011), we switch from examining direct band-gap chalcogenide based quantum dots to Si quantum dots synthesized in the Kauzlarich laboratory (UCD), which exhibit an indirect band-gap. Here a microwave-assisted reaction to produce hydrogen-terminated silicon quantum dots is discussed. The Si quantum dots were passivated for water solubility via two different methods: hydrosilylation produced 3-aminopropenyl-terminated Si quantum dots, and a modified Stöber process produced silica-encapsulated Si quantum dots. Both methods produce water-soluble quantum dots with maximum emission at 414 nm, and after purification, the quantum dots exhibit intrinsic fluorescence quantum yield efficiencies of 15 and 23%, respectively. Even though the quantum dots have different surfaces, they exhibit nearly identical absorption and fluorescence spectra. Femtosecond transient absorption spectroscopy was used for temporal resolution of the photoexcited carrier dynamics between the quantum dots and ligand. The transient dynamics of the 3-aminopropenyl-terminated Si quantum dots is interpreted as a formation and decay of a charge-transfer excited state between the delocalized π electrons of the carbon linker and the Si core excitons. This charge transfer state is stable for ~4 ns before reverting back to a more stable, long-living species. The silica-encapsulated Si QDs show a simpler spectrum without charge transfer dynamics. Appendix I (Chem. Mat., 1220, 2010), addresses the long-time (μs) transient kinetics associated with TiO2 and layered titanates (TBA2 2Ti4O9), which were synthesized in the Osterloh laboratory (UCD). Transient absorption data reveal that photogenerated electrons become trapped in mid band-gap states, from which they decay exponentially with a time-constant of 43.67 + 0.28 ms in titanates, which is much slower than the 68 + 1 ns observed for TiO2 nanocrystals. The slower kinetics observed for the TBA 2Ti4O9 nanosheets originates either from the presence of deeper trap sites on the sheets vs. the nanoparticles, more trap sites, or from more effective electron-hole separation because of the micrometer dimensions of the 2D lattice. Appendix II, depicts the visible solar spectrum at sea level detailing the percentage of photons and energy that exist within certain wavelength ranges.

Development of a portable petroleum by-products chemical sensor : phase III and IV.

DOT National Transportation Integrated Search

2009-08-21

Semiconductor quantum dots (QDs) are considered to have potential for chemical sensing application : because of their high surface to volume ratio and unique size tunable properties like : photoluminescence (PL). However, our study revealed for the f...

Qubits based on semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Zhang, Xin; Li, Hai-Ou; Wang, Ke; Cao, Gang; Xiao, Ming; Guo, Guo-Ping

2018-02-01

Not Available Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0301700), the National Natural Science Foundation of China (Grant Nos. 61674132, 11674300, 11575172, and 11625419), and the Fundamental Research Fund for the Central Universities.

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometric Approaches to Proteome Analysis

PubMed Central

Kailasa, Suresh Kumar; Cheng, Kuang-Hung; Wu, Hui-Fen

2013-01-01

Semiconductor quantum dots (QDs) or nanoparticles (NPs) exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs) in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis. PMID:28788422

Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples

DTIC Science & Technology

2015-11-13

P Wijewarnasuriya at the Army Research Lab to understand the bandd offsets of HgCdTe infrared detector structures. Especially when a sample is not...Final Report: Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples Report Title A used calibrated...structures i. G15-38 and G15-38 Quantum Dot ---------------------------- 16 Infrared Detector Samples ii. GSU13-MPD-GB1 Heterostructure

Solid-state-based analog of optomechanics

DOE PAGES

Naumann, Nicolas L.; Droenner, Leon; Carmele, Alexander; ...

2016-09-01

In this study, we investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction processes, which in the optomechanical case is the radiation pressure coupling and in the semiconductor case the electron–phonon coupling. We discuss bistabilities, lasing, and phonon damping, and recover the same qualitative behaviors for the semiconductor and the optomechanical cases expected for low driving strengths. However, in contrast to the optomechanical case, distinct signatures of higher order processes arise in the semiconductor model.

Charge instability in double quantum dots in Ge/Si core/shell nanowires

NASA Astrophysics Data System (ADS)

Zarassi, Azarin; Su, Zhaoen; Schwenderling, Jens; Frolov, Sergey M.; Hocevar, Moïra; Nguyen, Binh-Minh; Yoo, Jinkyoung; Dayeh, Shadi A.

Controlling dephasing times are of great challenge in the studies of spin qubit. Reported long spin coherence time and predicted strong spin-orbit interaction of holes in Ge/Si core/shell nanowires, as well as their weak coupling to very few nuclear spins of these group IV semiconductors, persuade electrical spin control. We have established Pauli spin blockade in gate-tunable quantum dots formed in these nanowires. The g-factor has been measured and evidence of spin-orbit interaction has been observed in the presence of magnetic field. However, electrical control of spins requires considerable stability in the double dot configuration, and imperfectly these dots suffer from poor stability. We report on fabrication modifications on Ge/Si core/shell nanowires, as well as measurement techniques to suppress the charge instabilities and ease the way to study spin-orbit coupling and resolve electric dipole spin resonance.

A CMOS silicon spin qubit

PubMed Central

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; De Franceschi, S.

2016-01-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform. PMID:27882926

A CMOS silicon spin qubit

NASA Astrophysics Data System (ADS)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

A CMOS silicon spin qubit.

PubMed

Maurand, R; Jehl, X; Kotekar-Patil, D; Corna, A; Bohuslavskyi, H; Laviéville, R; Hutin, L; Barraud, S; Vinet, M; Sanquer, M; De Franceschi, S

2016-11-24

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

The analytical approach to the multi-state lasing phenomenon in undoped and p-doped InAs/InGaAs semiconductor quantum dot lasers

NASA Astrophysics Data System (ADS)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

2014-05-01

We introduce an analytical approach to the multi-state lasing phenomenon in p-doped and undoped InAs/InGaAs quantum dot lasers which were studied both theoretically and experimentally. It is shown that the asymmetry in charge carrier distribution in quantum dots as well as hole-to-electron capture rate ratio jointly determine laser's behavior in such a regime. If the ratio is lower than a certain critical value, the complete quenching of ground-state lasing takes place at sufficiently high injection currents; at higher values of the ratio, our model predicts saturation of the ground-state power. It was experimentally shown that the modulation p-doping of laser's active region results in increase of output power emitted via the ground-state optical transitions of quantum dots and in enhancement of the injection currents range in which multi-state lasing takes place. The maximum temperature at which multi-state lasing exists was increased by about 50°C in the p-doped samples. These effects are qualitatively explained in the terms of the proposed model.

Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

NASA Astrophysics Data System (ADS)

Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

2017-02-01

Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

Interband emission energy in a dilute nitride quaternary semiconductor quantum dot for longer wavelength applications

NASA Astrophysics Data System (ADS)

Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo; Duque, C. A.

2016-07-01

Excitonic properties are studied in a strained Ga1-xInxNyAs1-y/GaAs cylindrical quantum dot. The optimum condition for the desired band alignment for emitting wavelength 1.55 μm is investigated using band anticrossing model and the model solid theory. The band gap and the band discontinuities of a Ga1-xInxNyAs1-y/GaAs quantum dot on GaAs are computed with the geometrical confinement effect. The binding energy of the exciton, the oscillator strength and its radiative life time for the optimum condition are found taking into account the spatial confinement effect. The effects of geometrical confinement and the nitrogen incorporation on the interband emission energy are brought out. The result shows that the desired band alignment for emitting wavelength 1.55 μm is achieved for the inclusion of alloy contents, y=0.0554% and x=0.339% in Ga1-xInxNyAs1-y/GaAs quantum dot. And the incorporation of nitrogen and indium shows the red-shift and the geometrical confinement shows the blue-shift. And it can be applied for fibre optical communication networks.

Quantum versus classical hyperfine-induced dynamics in a quantum dota)

NASA Astrophysics Data System (ADS)

Coish, W. A.; Loss, Daniel; Yuzbashyan, E. A.; Altshuler, B. L.

2007-04-01

In this article we analyze spin dynamics for electrons confined to semiconductor quantum dots due to the contact hyperfine interaction. We compare mean-field (classical) evolution of an electron spin in the presence of a nuclear field with the exact quantum evolution for the special case of uniform hyperfine coupling constants. We find that (in this special case) the zero-magnetic-field dynamics due to the mean-field approximation and quantum evolution are similar. However, in a finite magnetic field, the quantum and classical solutions agree only up to a certain time scale t <τc, after which they differ markedly.

Physics of frequency-modulated comb generation in quantum-well diode lasers

NASA Astrophysics Data System (ADS)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

PubMed

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Single-color, in situ photolithography marking of individual CdTe/ZnTe quantum dots containing a single Mn{sup 2+} ion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sawicki, K.; Malinowski, F. K.; Gałkowski, K.

2015-01-05

A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn{sup 2+} ion, where a magnetic field of up to 10 T in two orthogonal, Faraday and Voigt, configurations is applied to the same QD. The presented approach can be applied to a wide range of solid state nanoemitters.

III–V quantum light source and cavity-QED on Silicon

PubMed Central

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

Interference Lithography for Optical Devices and Coatings

DTIC Science & Technology

2010-01-01

semiconductor quantum dots. J. Chem. Phys. 2004, 121, 7421. 100. Jeon, S.; Braun, P. V., Hydrothermal Synthesis of Er-Doped Luminescent TiO2 Nanoparticles ...Silica Nanoparticle Synthesis .....................................................................23 2.2.2 Polymer Matrix Formulation...41 CHAPTER 3: NANOPARTICLE SYNTHESIS , FUNCTIONALIZATION, AND INCORPORATION INTO

Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot.

PubMed

Rudziński, W

2009-01-28

Spin-polarized electronic tunneling through a quantum dot coupled to ferromagnetic electrodes is investigated within a nonequilibrium Green function approach. An interplay between coherent intradot spin-flip transitions, tunneling processes and Coulomb correlations on the dot is studied for current-voltage characteristics of the tunneling junction in parallel and antiparallel magnetic configurations of the leads. It is found that due to the spin-flip processes electric current in the antiparallel configuration tends to the current characteristics in the parallel configuration, thus giving rise to suppression of the tunnel magnetoresistance (TMR) between the threshold bias voltages at which the dot energy level becomes active in tunneling. Also, the effect of a negative differential conductance in symmetrical junctions, splitting of the conductance peaks, significant modulation of TMR peaks around the threshold bias voltages as well as suppression of the diode-like behavior in asymmetrical junctions is discussed in the context of coherent intradot spin-flip transitions. It is also shown that TMR may be inverted at selected gate voltages, which qualitatively reproduces the TMR behavior predicted recently for temperatures in the Kondo regime, and observed experimentally beyond the Kondo regime for a semiconductor InAs quantum dot coupled to nickel electrodes.

Squeezing terahertz light into nanovolumes: nanoantenna enhanced terahertz spectroscopy (NETS) of semiconductor quantum dots.

PubMed

Toma, Andrea; Tuccio, Salvatore; Prato, Mirko; De Donato, Francesco; Perucchi, Andrea; Di Pietro, Paola; Marras, Sergio; Liberale, Carlo; Proietti Zaccaria, Remo; De Angelis, Francesco; Manna, Liberato; Lupi, Stefano; Di Fabrizio, Enzo; Razzari, Luca

2015-01-14

Terahertz spectroscopy has vast potentialities in sensing a broad range of elementary excitations (e.g., collective vibrations of molecules, phonons, excitons, etc.). However, the large wavelength associated with terahertz radiation (about 300 μm at 1 THz) severely hinders its interaction with nano-objects, such as nanoparticles, nanorods, nanotubes, and large molecules of biological relevance, practically limiting terahertz studies to macroscopic ensembles of these compounds, in the form of thick pellets of crystallized molecules or highly concentrated solutions of nanomaterials. Here we show that chains of terahertz dipole nanoantennas spaced by nanogaps of 20 nm allow retrieving the spectroscopic signature of a monolayer of cadmium selenide quantum dots, a significant portion of the signal arising from the dots located within the antenna nanocavities. A Fano-like interference between the fundamental antenna mode and the phonon resonance of the quantum dots is observed, accompanied by an absorption enhancement factor greater than one million. NETS can find immediate applications in terahertz spectroscopic studies of nanocrystals and molecules at extremely low concentrations. Furthermore, it shows a practicable route toward the characterization of individual nano-objects at these frequencies.

Characterization of CuCl quantum dots grown in NaCl single crystals via optical measurements, X-ray diffraction, and transmission electron microscopy

NASA Astrophysics Data System (ADS)

Miyajima, Kensuke; Akatsu, Tatsuro; Itoh, Ken

2018-05-01

We evaluated the crystal size, shape, and alignment of the lattice planes of CuCl quantum dots (QDs) embedded in NaCl single crystals by optical measurements, X-ray diffraction (XRD) patterns, and transmission electron microscopy (TEM). We obtained, for the first time, an XRD pattern and TEM images for CuCl QDs in NaCl crystals. The XRD pattern showed that the lattice planes of the CuCl QDs were parallel to those of the NaCl crystals. In addition, the size of the QDs was estimated from the diffraction width. It was apparent from the TEM images that almost all CuCl QDs were polygonal, although some cubic QDs were present. The mean size and size distribution of the QDs were also obtained. The dot size obtained from optical measurements, XRD, and TEM image were almost consistent. Our new findings can help to reveal the growth mechanism of semiconductor QDs embedded in a crystallite matrix. In addition, this work will play an important role in progressing the study of optical phenomena originating from assembled semiconductor QDs.

Tailoring Magnetism in Bulk Semiconductors and Quantum Dots

NASA Astrophysics Data System (ADS)

Zutic, Igor

2008-03-01

Carrier-mediated magnetism in semiconductors shows important and potentially useful differences from their metallic counterparts [1]. For example, in magnetically doped semiconductors the change in carrier density induced by light or bias could be sufficient to turn the ferromagnetism on and off. However, there remain many important challenges to fully understand these materials. Our density functional theory study of Mn- doped II-IV-V2 chalcopyrites [2] reveals that variation of magnetic properties across 64 different materials cannot be explained by the dominant models of ferromagnetism in semiconductors. We observe no qualitative similarity with the suggested Curie temperature scaling with the inverse cube of the lattice constant [3]. In contrast to most of the theoretical studies, we explicitly include the temperature dependence of the carrier density and propose a model which permits analysis of the thermodynamic stability of the competing magnetic states [4]. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor and discuss the experimental support for this prediction. An increasing temperature leads to an increased carrier density such that the enhanced coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised. We also use the real space finite-temperature local spin density approximation to examine magnetically doped quantum dots in which the interplay of quantum confinement and strong Coulomb interactions can lead to novel possibilities to tailor magnetism. We reveal that, even at a fixed number of carriers, the gate induced changes in the screening [5] or deviations from isotropic quantum confinement [6] could allow for a reversible control of magnetism and switching between zero and finite magnetization. Such magnetic quantum dots could also provide versatile voltage-control of spin currents and spin filtering. The work done in collaboration with S. C. Erwin (Naval Research Lab), A. G. Petukhov (South Dakota School of Mines and Technology), R. M. Abolfath (SUNY Buffalo) and P. Hawrylak (NRC, Canada). [1] T. Jungwirth et al., Rev. Mod. Phys 78, 1311 (2006); I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004). [2] S. C. Erwin and I. Zutic, Nature Mater. 3, 410 (2004). [3] T. Dietl et al., Science 287, 1019 (2000). [4] A. G. Petukhov, I. Zutic, and S. Erwin, Phys. Rev. Lett. 99, 257202 (2007) [5] R. M. Abolfath, P. Hawrylak, and I. Zutic, Phys. Rev. Lett. 98, 207203 (2007); New J. Phys. 9, 353 (2007). [6] R. M. Abolfath, A. G. Petukhov, and I. Zutic, arXiv:0707.2805.

Ultrashort, high power, and ultralow noise mode-locked optical pulse generation using quantum-dot semiconductor lasers

NASA Astrophysics Data System (ADS)

Choi, Myoung-Taek

This dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section devices. Short pulse generation from an external cavity mode-locked QD two-section diode laser is studied. High quality, sub-picosecond (960 fs), high peak power (1.2 W) pulse trains are obtained. The sign and magnitude of pulse chirp were measured for the first time. The role of the self-phase modulation and the linewidth enhancement factor in QD mode-locked lasers is addressed. The noise performance of two-section mode-locked lasers and a SOA-based ring laser was investigated. Significant reduction of the timing jitter under hybrid mode-locked operation was achieved owing to more than one order of magnitude reduction of the linewidth in QD gain media. Ultralow phase noise performance (integrated timing jitter of a few fs at a 10 GHz repetition rate) was demonstrated from an actively mode-locked unidirectional ring laser. These results show that quantum dot mode-locked lasers are strong competitors to conventional semiconductor lasers in noise performance. Finally we demonstrated an opto-electronic oscillator (OEO) and coupled opto-electronic oscillators (COEO) which have the potential for both high purity microwave and low noise optical pulse generation. The phase noise of the COEO is measured by the photonic delay line frequency discriminator method. Based on this study we discuss the prospects of the COEO as a low noise optical pulse source.

Electrical control of optical orientation of neutral and negatively charged excitons in an n -type semiconductor quantum well

NASA Astrophysics Data System (ADS)

Dzhioev, R. I.; Korenev, V. L.; Lazarev, M. V.; Sapega, V. F.; Gammon, D.; Bracker, A. S.

2007-01-01

We report electric field induced increase of spin orientation of negatively charged excitons (trions) localized in n -type GaAs/AlGaAs quantum well. Under resonant excitation of free neutral heavy-hole excitons, the polarization of trions increases dramatically with electrical injection of electrons. The polarization enhancement correlates strongly with trion/exciton luminescence intensity ratio. This effect results from a very efficient trapping of free neutral excitons by the quantum well interfacial fluctuations (“natural” quantum dots) containing resident electrons.

Synthesis and Spectroscopy of Silver-Doped PbSe Quantum Dots

DOE PAGES

Kroupa, Daniel M.; Hughes, Barbara K.; Miller, Elisa M.; ...

2017-06-25

Electronic impurity doping of bulk semiconductors is an essential component of semiconductor science and technology. Yet there are only a handful of studies demonstrating control of electronic impurities in semiconductor nanocrystals. Here, we studied electronic impurity doping of colloidal PbSe quantum dots (QDs) using a postsynthetic cation exchange reaction in which Pb is exchanged for Ag. We found that varying the concentration of dopants exposed to the as-synthesized PbSe QDs controls the extent of exchange. The electronic impurity doped QDs exhibit the fundamental spectroscopic signatures associated with injecting a free charge carrier into a QD under equilibrium conditions, including amore » bleach of the first exciton transition and the appearance of a quantum-confined, low-energy intraband absorption feature. Photoelectron spectroscopy confirms that Ag acts as a p-type dopant for PbSe QDs and infrared spectroscopy is consistent with k • p calculations of the size-dependent intraband transition energy. We find that to bleach the first exciton transition by an average of 1 carrier per QD requires that approximately 10% of the Pb be replaced by Ag. Here, we hypothesize that the majority of incorporated Ag remains at the QD surface and does not interact with the core electronic states of the QD. Instead, the excess Ag at the surface promotes the incorporation of <1% Ag into the QD core where it causes p-type doping behavior.« less

Multi-dimensional coherent optical spectroscopy of semiconductor nanostructures: Collinear and non-collinear approaches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nardin, Gaël; Li, Hebin; Autry, Travis M.

2015-03-21

We review our recent work on multi-dimensional coherent optical spectroscopy (MDCS) of semiconductor nanostructures. Two approaches, appropriate for the study of semiconductor materials, are presented and compared. A first method is based on a non-collinear geometry, where the Four-Wave-Mixing (FWM) signal is detected in the form of a radiated optical field. This approach works for samples with translational symmetry, such as Quantum Wells (QWs) or large and dense ensembles of Quantum Dots (QDs). A second method detects the FWM in the form of a photocurrent in a collinear geometry. This second approach extends the horizon of MDCS to sub-diffraction nanostructures,more » such as single QDs, nanowires, or nanotubes, and small ensembles thereof. Examples of experimental results obtained on semiconductor QW structures are given for each method. In particular, it is shown how MDCS can assess coupling between excitons confined in separated QWs.« less

Investigations into the formation of nanocrystalline quantum dot thin films by mist deposition process

NASA Astrophysics Data System (ADS)

Kshirsagar, Aditya

Semiconductor nanocrystalline quantum dots (NQDs) have material properties remarkably different compared to bulk semiconductors with the same material composition. These NQDs have various novel applications in the electronic and photonic industry, such as light emitting diodes (LEDs) and flat-panel displays. In these applications, ultra-thin films of NQDs in the monolayer regime are needed to ensure optimal current transport properties and device efficiency. There is ongoing search to find a suitable method to deposit and pattern such ultra-thin films of quantum dots with few monolayer thicknesses. Several competing approaches are available, each with its pros and cons. This study explores mist deposition as the technique to fill this void. In this study, ultra-thin films of quantum dots are deposited on diverse substrates and are characterized to understand the mechanics of mist deposition. Various applications of blanket deposited and patterned quantum dot films are studied. The results discussed here include atomic force microscopy analysis of the films to study surface morphology, fluorescence microscopy to study light emission and optical microscope images to study patterning techniques. These results demonstrate the ability of mist deposition to form 1-4 monolayers thick, uniform, defect-free patterned films with root mean square (RMS) surface roughness less than 2 nm. LEDs fabricated using mist deposition show a peak luminescence greater than 500 cd/m2 for matched red, yellow and green devices using Alq3 as the electron transport layer, and over 9000 cd/m2 for red devices using ZnO as the electron transport layer, respectively. In addition to the experimental approach to study the process and explore potential applications, simulation and modeling are carried out to understand the various aspects of mist deposition. A mathematical model is presented which discusses the atomization process of the precursor solution, the physics involved during the deposition process, and the mechanics of film formation. Results of film morphology simulation using Monte Carlo techniques and process simulation using multi-physics approach are discussed. Problems in pattern transfer due to electrostatic effects when using shadow masks are presented in a separate chapter.

Semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

DOEpatents

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Rhenium ion beam for implantation into semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.

2012-02-15

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics andmore » nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.« less

Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

DOE PAGES

Kim, Dohun; Ward, D. R.; Simmons, C. B.; ...

2015-02-16

An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

A Study on the Applications of Quantum Optical Coherence to Nano-Optics

NASA Astrophysics Data System (ADS)

Hakami, Jabir Wali

Optically controlled dipole-dipole interaction at submicrometers and subwavelength scales leads to many interesting phenomenon and remarkable potential applications in quantum optics, condensed matter physics, and today's micro-devices. In this dissertation, we study the applications of quantum optical coherence to nano-optics in the following systems and aspects. On the one hand, chiral metamaterials has been previously reported as excellent candidates to realize both attractive and repulsive Casimir forces, where the existence of a repulsive Casimir force depends upon the strength of the chirality. On the other hand, nanoscale integration of metal nanoparticles and semiconductors is particularly interesting because the strengths of both materials are combined in such a hybrid system. In the first part of this work, we proposed a technical scheme to coherently control of the Casimir interaction energy with two identical chirality mediums. We took explicit caution regarding the requirements of passivity and causal response of the materials, since these requirements are essential for the application of the Lifshitz formula. The rare-earth metals' atomic species, for instance, dysprosium, is proposed as an applicable medium for the forthcoming studies of possible experimental implementation of our technique. Secondly, we fully investigated the coherent control of the quantum optical properties of spontaneous emission spectra of a semiconductor quantum dot coupled to a metallic nanoparticle. The properties of the spontaneous emission spectra of such a system are studied in detail with and without involving the coherent field. The Rabi splitting effect in the spectrum emitted by the quantum dot under particular conditions is predicted for different sizes of the metal nanoparticles. We show that the spontaneous emission spectra of the transition coupled to surface plasmons may be further modified by adjusting the external coherent control on the adjacent transitions. In the third part, we propose a robust protocol to study the entanglement generation in a hybrid structure consisting of two quantum dots in the proximity of a metallic nanoshell. The entanglement arises impulsively due to common coupling to the plasmonic nanostructure, without demanding postselective measurement or mediating the dissipative environment. The long-lived entangled states can be created deterministically by optimizing the shell thickness as well as the ratio of the distances between the quantum dots and the surface of the shell. The loss of the system is greatly reduced even when the quantum dots are ultraclose to the shell, which signifies a slow decay rate of the coherence information and longtime entanglement preservation.

Oriented conjugation of single-domain antibodies and quantum dots.

PubMed

Brazhnik, Kristina; Nabiev, Igor; Sukhanova, Alyona

2014-01-01

Nanoparticle-based biodetection routinely employs monoclonal antibodies (mAbs) for targeting. However, the large size of mAbs limits the number of ligands per nanoparticle and severely restricts the bioavailability and distribution of these probes in a sample. Furthermore, conventional conjugation techniques provide nanoprobes with irregular orientation of mAbs on the nanoparticle surface and often provoke mAb unfolding. Here, we describe a protocol for engineering a new generation of ultrasmall diagnostic nanoprobes through oriented conjugation of semiconductor quantum dots (QDs) with 13 kDa single-domain antibodies (sdAbs) derived from llama immunoglobulin G (IgG). The sdAbs are conjugated with QDs in a highly oriented manner via an additional cysteine residue specifically integrated into the sdAb C-terminus. The resultant nanoprobes are <12 nm in diameter, ten times smaller in volume compared to the known alternatives. They have been proved highly efficient in flow cytometry and immunuhistochemical diagnostics. This approach can be easily extended to other semiconductor and plasmonic nanoparticles.

Small signal analysis of four-wave mixing in InAs/GaAs quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Ma, Shaozhen; Chen, Zhe; Dutta, Niloy K.

2009-02-01

A model to study four-wave mixing (FWM) wavelength conversion in InAs-GaAs quantum-dot semiconductor optical amplifier is proposed. Rate equations involving two QD states are solved to simulate the carrier density modulation in the system, results show that the existence of QD excited state contributes to the ultra fast recover time for single pulse response by serving as a carrier reservoir for the QD ground state, its speed limitations are also studied. Nondegenerate four-wave mixing process with small intensity modulation probe signal injected is simulated using this model, a set of coupled wave equations describing the evolution of all frequency components in the active region of QD-SOA are derived and solved numerically. Results show that better FWM conversion efficiency can be obtained compared with the regular bulk SOA, and the four-wave mixing bandwidth can exceed 1.5 THz when the detuning between pump and probe lights is 0.5 nm.

Photoemission of Energetic Hot Electrons Produced via Up-Conversion in Doped Quantum Dots.

PubMed

Dong, Yitong; Parobek, David; Rossi, Daniel; Son, Dong Hee

2016-11-09

The benefits of the hot electrons from semiconductor nanostructures in photocatalysis or photovoltaics result from their higher energy compared to that of the band-edge electrons facilitating the electron-transfer process. The production of high-energy hot electrons usually requires short-wavelength UV or intense multiphoton visible excitation. Here, we show that highly energetic hot electrons capable of above-threshold ionization are produced via exciton-to-hot-carrier up-conversion in Mn-doped quantum dots under weak band gap excitation (∼10 W/cm 2 ) achievable with the concentrated solar radiation. The energy of hot electrons is as high as ∼0.4 eV above the vacuum level, much greater than those observed in other semiconductor or plasmonic metal nanostructures, which are capable of performing energetically and kinetically more-challenging electron transfer. Furthermore, the prospect of generating solvated electron is unique for the energetic hot electrons from up-conversion, which can open a new door for long-range electron transfer beyond short-range interfacial electron transfer.

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE PAGES

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; ...

2017-05-16

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

PubMed Central

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-01-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications. PMID:28508866

Tuning optical properties of water-soluble CdTe quantum dots for biological applications

NASA Astrophysics Data System (ADS)

Schulze, Anne S.; Tavernaro, Isabella; Machka, Friederike; Dakischew, Olga; Lips, Katrin S.; Wickleder, Mathias S.

2017-02-01

In this study, two different synthetic methods in aqueous solution are presented to tune the optical properties of CdTe and CdSe semiconductor nanoparticles. Additionally, the influence of different temperatures, pressures, precursor ratios, surface ligands, bases, and core components in the synthesis was investigated with regard to the particle sizes and optical properties. As a result, a red shift of the emission and absorption maxima with increasing reaction temperature (100 to 220°C), pressure (1 to 25 bar), and different ratios of core components of alloyed semiconductor nanoparticles could be observed without a change of the particle size. An increase in particle size from 2.5 to 5 nm was only achieved by variation of the mercaptocarboxylic acid ligands in combination with the reaction time and used base. To get a first hint on the cytotoxic effects and cell uptake of the synthesized quantum dots, in vitro tests mesenchymal stem cells (MSCs) were carried out.

Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho; Yu, Bong-Ahn

2015-03-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

Simultaneous multichannel wavelength multicasting and XOR logic gate multicasting for three DPSK signals based on four-wave mixing in quantum-dot semiconductor optical amplifier.

PubMed

Qin, Jun; Lu, Guo-Wei; Sakamoto, Takahide; Akahane, Kouichi; Yamamoto, Naokatsu; Wang, Danshi; Wang, Cheng; Wang, Hongxiang; Zhang, Min; Kawanishi, Tetsuya; Ji, Yuefeng

2014-12-01

In this paper, we experimentally demonstrate simultaneous multichannel wavelength multicasting (MWM) and exclusive-OR logic gate multicasting (XOR-LGM) for three 10Gbps non-return-to-zero differential phase-shift-keying (NRZ-DPSK) signals in quantum-dot semiconductor optical amplifier (QD-SOA) by exploiting the four-wave mixing (FWM) process. No additional pump is needed in the scheme. Through the interaction of the input three 10Gbps DPSK signal lights in QD-SOA, each channel is successfully multicasted to three wavelengths (1-to-3 for each), totally 3-to-9 MWM, and at the same time, three-output XOR-LGM is obtained at three different wavelengths. All the new generated channels are with a power penalty less than 1.2dB at a BER of 10(-9). Degenerate and non-degenerate FWM components are fully used in the experiment for data and logic multicasting.

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

NASA Astrophysics Data System (ADS)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-05-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.

Charge transport in strongly coupled quantum dot solids

NASA Astrophysics Data System (ADS)

Kagan, Cherie R.; Murray, Christopher B.

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Charge transport in strongly coupled quantum dot solids.

PubMed

Kagan, Cherie R; Murray, Christopher B

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Silica coating of PbS quantum dots and their position control using a nanohole on Si substrate

NASA Astrophysics Data System (ADS)

Mukai, Kohki; Okumura, Isao; Nishizaki, Yuta; Yamashita, Shuzo; Niwa, Keisuke

2018-04-01

We succeeded in controlling the apparent size of a colloidal PbS quantum dot (QD) in the range of 20 to 140 nm by coating with silica and trapping the coated QDs in a nanohole prepared by scanning probe microscope lithography. Photoluminescence intensity was improved by controlling the process of adding the silica source material of tetraethoxysilane for the coating. Nanoholes of different sizes were formed on a single substrate by scanning probe oxidation with the combination of SF6 dry etching and KOH wet etching. QDs having an arbitrary energy structure can be arranged at an arbitrary position on the semiconductor substrate using this technique, which will aid in the fabrication of future nanosize solid devices such as quantum information circuits.

Scalable designs for quasiparticle-poisoning-protected topological quantum computation with Majorana zero modes

NASA Astrophysics Data System (ADS)

Karzig, Torsten; Knapp, Christina; Lutchyn, Roman M.; Bonderson, Parsa; Hastings, Matthew B.; Nayak, Chetan; Alicea, Jason; Flensberg, Karsten; Plugge, Stephan; Oreg, Yuval; Marcus, Charles M.; Freedman, Michael H.

2017-06-01

We present designs for scalable quantum computers composed of qubits encoded in aggregates of four or more Majorana zero modes, realized at the ends of topological superconducting wire segments that are assembled into superconducting islands with significant charging energy. Quantum information can be manipulated according to a measurement-only protocol, which is facilitated by tunable couplings between Majorana zero modes and nearby semiconductor quantum dots. Our proposed architecture designs have the following principal virtues: (1) the magnetic field can be aligned in the direction of all of the topological superconducting wires since they are all parallel; (2) topological T junctions are not used, obviating possible difficulties in their fabrication and utilization; (3) quasiparticle poisoning is abated by the charging energy; (4) Clifford operations are executed by a relatively standard measurement: detection of corrections to quantum dot energy, charge, or differential capacitance induced by quantum fluctuations; (5) it is compatible with strategies for producing good approximate magic states.

Electrically driven quantum light emission in electromechanically tuneable photonic crystal cavities

NASA Astrophysics Data System (ADS)

Petruzzella, M.; Pagliano, F. M.; Zobenica, Ž.; Birindelli, S.; Cotrufo, M.; van Otten, F. W. M.; van der Heijden, R. W.; Fiore, A.

2017-12-01

A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling of the number of these quantum nodes on a fully integrated chip has been prevented by the use of optical pumping strategies that require a bulky off-chip laser along with the lack of methods to control the energies of nano-cavities and emitters. Here, we concurrently overcome these limitations by demonstrating electrical injection of single excitonic lines within a nano-electro-mechanically tuneable photonic crystal cavity. When an electrically driven dot line is brought into resonance with a photonic crystal mode, its emission rate is enhanced. Anti-bunching experiments reveal the quantum nature of these on-demand sources emitting in the telecom range. These results represent an important step forward in the realization of integrated quantum optics experiments featuring multiple electrically triggered Purcell-enhanced single-photon sources embedded in a reconfigurable semiconductor architecture.

High-fidelity gates in quantum dot spin qubits.

PubMed

Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

2013-12-03

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

NASA Astrophysics Data System (ADS)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Quantum cellular automata

NASA Astrophysics Data System (ADS)

Porod, Wolfgang; Lent, Craig S.; Bernstein, Gary H.

1994-06-01

The Notre Dame group has developed a new paradigm for ultra-dense and ultra-fast information processing in nanoelectronic systems. These Quantum Cellular Automata (QCA's) are the first concrete proposal for a technology based on arrays of coupled quantum dots. The basic building block of these cellular arrays is the Notre Dame Logic Cell, as it has been called in the literature. The phenomenon of Coulomb exclusion, which is a synergistic interplay of quantum confinement and Coulomb interaction, leads to a bistable behavior of each cell which makes possible their use in large-scale cellular arrays. The physical interaction between neighboring cells has been exploited to implement logic functions. New functionality may be achieved in this fashion, and the Notre Dame group invented a versatile majority logic gate. In a series of papers, the feasibility of QCA wires, wire crossing, inverters, and Boolean logic gates was demonstrated. A major finding is that all logic functions may be integrated in a hierarchial fashion which allows the design of complicated QCA structures. The most complicated system which was simulated to date is a one-bit full adder consisting of some 200 cells. In addition to exploring these new concepts, efforts are under way to physically realize such structures both in semiconductor and metal systems. Extensive modeling work of semiconductor quantum dot structures has helped identify optimum design parameters for QCA experimental implementations.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

PubMed

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

2017-08-11

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

Stoichiometry control in quantum dots: a viable analog to impurity doping of bulk materials.

PubMed

Luther, Joseph M; Pietryga, Jeffrey M

2013-03-26

A growing body of research indicates that the stoichiometry of compound semiconductor quantum dots (QDs) may offer control over the materials' optoelectronic properties in ways that could be invaluable in electronic devices. Quantum dots have been characterized as having a stoichiometric bulk-like core with a highly reconstructed surface of a more flexible composition, consisting essentially of ligated, weakly bound ions. As such, many efforts toward stoichiometry-based control over material properties have focused on ligand manipulation. In this issue of ACS Nano, Murray and Kagan's groups instead demonstrate control of the conductive properties of QD arrays by altering the stoichiometry via atomic infusion using a thermal evaporation technique. In this work, PbSe and PbS QD films are made to show controlled n- or p-type behavior, which is key to developing optimized QD-based electronics. In this Perspective, we discuss recent developments and the future outlook in using stoichiometry as a tool to further manipulate QD material properties in this context.

Recent developments in Förster resonance energy transfer (FRET) diagnostics using quantum dots.

PubMed

Geißler, Daniel; Hildebrandt, Niko

2016-07-01

The exceptional photophysical properties and the nanometric dimensions of colloidal semiconductor quantum dots (QD) have strongly attracted the bioanalytical community over the last approximately 20 y. In particular, the integration of QDs in the analysis of biological components and interactions, and the related diagnostics using Förster resonance energy transfer (FRET), have allowed researchers to significantly improve and diversify fluorescence-based biosensing. In this TRENDS article, we review some recent developments in QD-FRET biosensing that have implemented this technology in electronic consumer products, multiplexed analysis, and detection without light excitation for diagnostic applications. In selected examples of smartphone-based imaging, single- and multistep FRET, steady-state and time-resolved spectroscopy, and bio/chemiluminescence detection of QDs used as both FRET donors and acceptors, we highlight the advantages of QD-based FRET biosensing for multiplexed and sensitive diagnostics. Graphical Abstract Quantum dots (QDs) can be applied as donors and/or acceptors for Förster resonance energy transfer- (FRET-) based biosensing for multiplexed and sensitive diagnostics in various assay formats.

Understanding chemically processed solar cells based on quantum dots

NASA Astrophysics Data System (ADS)

Malgras, Victor; Nattestad, Andrew; Kim, Jung Ho; Dou, Shi Xue; Yamauchi, Yusuke

2017-12-01

Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum.

Generalized effective-mass theory of subsurface scanning tunneling microscopy: Application to cleaved quantum dots

NASA Astrophysics Data System (ADS)

Roy, M.; Maksym, P. A.; Bruls, D.; Offermans, P.; Koenraad, P. M.

2010-11-01

An effective-mass theory of subsurface scanning tunneling microscopy (STM) is developed. Subsurface structures such as quantum dots embedded into a semiconductor slab are considered. States localized around subsurface structures match on to a tail that decays into the vacuum above the surface. It is shown that the lateral variation in this tail may be found from a surface envelope function provided that the effects of the slab surfaces and the subsurface structure decouple approximately. The surface envelope function is given by a weighted integral of a bulk envelope function that satisfies boundary conditions appropriate to the slab. The weight function decays into the slab inversely with distance and this slow decay explains the subsurface sensitivity of STM. These results enable STM images to be computed simply and economically from the bulk envelope function. The method is used to compute wave-function images of cleaved quantum dots and the computed images agree very well with experiment.

Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode.

PubMed

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Zhang, Haiting; Song, Xiaoxian; Cao, Mingxuan; Yu, Yu; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2017-09-20

A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The channel length in the vertical architecture was determined by the channel layer thickness, which can provide an ultrashort channel length without the need for a high-precision manufacturing process. The performance of VPDs with two types of semiconductor layers, a graphene-PbS quantum dot hybrid (GQDH) and PbS quantum dots (QDs), was measured. The GQDH VPD showed better photoelectric properties than the QD VPD because of the high mobility of graphene doped in the channel. The GQDH VPD exhibited excellent photoresponse properties with a responsivity of 1.6 × 10 4 A/W in the p-type regime and a fast response speed with a rise time of 8 ms. The simple manufacture and the promising photoresponse of the GQDH VPDs reveal that an easy and effective way to fabricate high-performance ambipolar photodetectors was developed.

Spectra, current flow, and wave-function morphology in a model PT -symmetric quantum dot with external interactions

NASA Astrophysics Data System (ADS)

Tellander, Felix; Berggren, Karl-Fredrik

2017-04-01

In this paper we use numerical simulations to study a two-dimensional (2D) quantum dot (cavity) with two leads for passing currents (electrons, photons, etc.) through the system. By introducing an imaginary potential in each lead the system is made symmetric under parity-time inversion (PT symmetric). This system is experimentally realizable in the form of, e.g., quantum dots in low-dimensional semiconductors, optical and electromagnetic cavities, and other classical wave analogs. The computational model introduced here for studying spectra, exceptional points (EPs), wave-function symmetries and morphology, and current flow includes thousands of interacting states. This supplements previous analytic studies of few interacting states by providing more detail and higher resolution. The Hamiltonian describing the system is non-Hermitian; thus, the eigenvalues are, in general, complex. The structure of the wave functions and probability current densities are studied in detail at and in between EPs. The statistics for EPs is evaluated, and reasons for a gradual dynamical crossover are identified.

3D superstructures with an orthorhombic lattice assembled by colloidal PbS quantum dots.

PubMed

Ushakova, Elena V; Cherevkov, Sergei A; Litvin, Aleksandr P; Parfenov, Peter S; Kasatkin, Igor A; Fedorov, Anatoly V; Gun'ko, Yurii K; Baranov, Alexander V

2018-05-03

We report a new type of metamaterial comprising a highly ordered 3D network of 3-7 nm lead sulfide quantum dots self-assembled in an organic matrix formed by amphiphilic ligands (oleic acid molecules). The obtained 3D superstructures possess an orthorhombic lattice with the distance between the nanocrystals as large as 10-40 nm. Analysis of self-assembly and destruction of the superstructures in time performed by a SAXS technique shows that their morphology depends on the quantity of amphiphilic ligands and width of the quantum dot size and its distribution. Formation of the superstructures is discussed in terms of a model describing the lyotropic crystal formation by micelles from three-phase mixtures. The results show that the organic molecules possessing surfactant properties and capable of forming micelles with nanoparticles as a micelle core can be utilized as building blocks for the creation of novel metamaterials based on a highly ordered 3D network of semiconductors, metals or magnetic nanoparticles.

Enhanced carrier multiplication in engineered quasi-type-II quantum dots

PubMed Central

Cirloganu, Claudiu M.; Padilha, Lazaro A.; Lin, Qianglu; Makarov, Nikolay S.; Velizhanin, Kirill A.; Luo, Hongmei; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.

2014-01-01

One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core. PMID:24938462

Fourier transform spectra of quantum dots

NASA Astrophysics Data System (ADS)

Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

2009-09-01

Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

Fourier transform spectra of quantum dots

NASA Astrophysics Data System (ADS)

Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

2010-05-01

Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

Understanding chemically processed solar cells based on quantum dots.

PubMed

Malgras, Victor; Nattestad, Andrew; Kim, Jung Ho; Dou, Shi Xue; Yamauchi, Yusuke

2017-01-01

Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO 2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum.

An Optimized Three-Level Design of Decoder Based on Nanoscale Quantum-Dot Cellular Automata

NASA Astrophysics Data System (ADS)

Seyedi, Saeid; Navimipour, Nima Jafari

2018-03-01

Quantum-dot Cellular Automata (QCA) has been potentially considered as a supersede to Complementary Metal-Oxide-Semiconductor (CMOS) because of its inherent advantages. Many QCA-based logic circuits with smaller feature size, improved operating frequency, and lower power consumption than CMOS have been offered. This technology works based on electron relations inside quantum-dots. Due to the importance of designing an optimized decoder in any digital circuit, in this paper, we design, implement and simulate a new 2-to-4 decoder based on QCA with low delay, area, and complexity. The logic functionality of the 2-to-4 decoder is verified using the QCADesigner tool. The results have shown that the proposed QCA-based decoder has high performance in terms of a number of cells, covered area, and time delay. Due to the lower clock pulse frequency, the proposed 2-to-4 decoder is helpful for building QCA-based sequential digital circuits with high performance.

Preliminary Study of ZnS:Mn2+ Quantum Dots Response Under UV and X-Ray Irradiation

NASA Astrophysics Data System (ADS)

Saatsakis, G.; Valais, I.; Michail, C.; Fountzoula, C.; Fountos, G.; Koukou, V.; Martini, N.; Kalyvas, N.; Bakas, A.; Sianoudis, I.; Kandarakis, I.; Panayiotakis, G. S.

2017-11-01

Quantum Dots are semiconductor nanocrystals, with their optical properties controlled by their size, shape and material composition. The aim of the present study is to examine the scintillation properties of Manganese Doped Zinc Sulfide (ZnS:Mn 2+) Quantum Dot (QDs) nanocrystals under UV and X-ray irradiation. ZnS:Mn 2+ Quantum Dots, with typical diameter of ZnS dots of 13-20nm (also called scintillation QDs, stQDs), were developed and acquired by Mesolight Inc. The initial stQD sample was a solution of 75mg of ZnS:Mn 2+ dissolved in 100μL of Toluene, having a concentration of 75% w/v. Emission characteristics under UV and X-Ray excitation were examined. Two ultraviolet sources were incorporated (315 nm and 365 nm) as well as a medical X-ray tube with tube voltage from 50 to 130 kVp. Parameters such as Energy Quantum Efficiency under UV excitation and Luminescence Efficiency-LE (light energy flux over exposure rate) under X-ray excitation were examined. Luminescence Efficiency (LE) of ZnS:Mn 2+ was higher than that exhibited by previously examined QDs, (ZnCdSeS:ZnS and ZnCuInS:ZnS). The ability of ZnS:Mn 2+ to transform UV photons energy into optical photons energy, tends to increase while the incident UV wavelength decreases. Energy Quantum Efficiency of the sample exhibited a 6% increase when exposed to 315nm UV light compared to 365 nm. The emission spectrum of the stQDs, exhibited a narrow peak (~585nm) in the yellow range.

Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles

PubMed Central

Tvrdy, Kevin; Frantsuzov, Pavel A.; Kamat, Prashant V.

2011-01-01

Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO2, TiO2, and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO2) were not the same as those which showed the highest photocurrent (TiO2). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency. PMID:21149685

Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles.

PubMed

Tvrdy, Kevin; Frantsuzov, Pavel A; Kamat, Prashant V

2011-01-04

Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO(2), TiO(2), and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO(2)) were not the same as those which showed the highest photocurrent (TiO(2)). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency.

Theoretical Investigation of Optical Detection and Recognition of Single Biological Molecules Using Coherent Dynamics of Exciton-Plasmon Coupling

PubMed Central

Sadeghi, S. M.; Hood, B.; Patty, K. D.; Mao, C.-B.

2013-01-01

We use quantum coherence in a system consisting of one metallic nanorod and one semi-conductor quantum dot to investigate a plasmonic nanosensor capable of digital optical detection and recognition of single biological molecules. In such a sensor the adsorption of a specific molecule to the nanorod turns off the emission of the system when it interacts with an optical pulse having a certain intensity and temporal width. The proposed quantum sensors can count the number of molecules of the same type or differentiate between molecule types with digital optical signals that can be measured with high certainty. We show that these sensors are based on the ultrafast upheaval of coherent dynamics of the system and the removal of coherent blockage of energy transfer from the quantum dot to the nanorod once the adsorption process has occurred. PMID:24040424

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

Spectroscopic investigation of alloyed quantum dot-based FRET to cresyl violet dye.

PubMed

Kotresh, M G; Adarsh, K S; Shivkumar, M A; Mulimani, B G; Savadatti, M I; Inamdar, S R

2016-05-01

Quantum dots (QDs), bright luminescent semiconductor nanoparticles, have found numerous applications ranging from optoelectronics to bioimaging. Here, we present a systematic investigation of fluorescence resonance energy transfer (FRET) from hydrophilic ternary alloyed quantum dots (CdSeS/ZnS) to cresyl violet dye with a view to explore the effect of composition of QD donors on FRET efficiency. Fluorescence emission of QD is controlled by varying the composition of QD without altering the particle size. The results show that quantum yield of the QDs increases with increase in the emission wavelength. The FRET parameters such as spectral overlap J(λ), Förster distance R0, intermolecular distance (r), rate of energy transfer k(T)(r), and transfer efficiency (E) are determined by employing both steady-state and time-resolved fluorescence spectroscopy. Additionally, dynamic quenching is noticed to occur in the present FRET system. Stern-Volmer (K(D)) and bimolecular quenching constants (k(q)) are determined from the Stern-Volmer plot. It is observed that the transfer efficiency follows a linear dependence on the spectral overlap and the quantum yield of the donor as predicted by the Förster theory upon changing the composition of the QD. Copyright © 2015 John Wiley & Sons, Ltd.

Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes.

PubMed

Wu, Kaifeng; Song, Nianhui; Liu, Zheng; Zhu, Haiming; Rodríguez-Córdoba, William; Lian, Tianquan

2013-08-15

Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru

The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

Self-generation of optical frequency comb in single section quantum dot Fabry-Perot lasers: a theoretical study.

PubMed

Bardella, Paolo; Columbo, Lorenzo Luigi; Gioannini, Mariangela

2017-10-16

Optical Frequency Comb (OFC) generated by semiconductor lasers are currently widely used in the extremely timely field of high capacity optical interconnects and high precision spectroscopy. In the last decade, several experimental evidences of spontaneous OFC generation have been reported in single section Quantum Dot (QD) lasers. Here we provide a physical understanding of these self-organization phenomena by simulating the multi-mode dynamics of a single section Fabry-Perot (FP) QD laser using a Time-Domain Traveling-Wave (TDTW) model that properly accounts for coherent radiation-matter interaction in the semiconductor active medium and includes the carrier grating generated by the optical standing wave pattern in the laser cavity. We show that the latter is the fundamental physical effect at the origin of the multi-mode spectrum appearing just above threshold. A self-mode-locking regime associated with the emission of OFC is achieved for higher bias currents and ascribed to nonlinear phase sensitive effects as Four Wave Mixing (FWM). Our results explain in detail the behaviour observed experimentally by different research groups and in different QD and Quantum Dash (QDash) devices.

QCAD simulation and optimization of semiconductor double quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina

2013-12-01

We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltagesmore » in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design comparison and optimization.« less

{100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit [Knoxville, TN

2012-05-15

Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Integrated semiconductor quantum dot scintillation detector: Ultimate limit for speed and light yield

DOE PAGES

Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; ...

2016-03-30

Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 10 15 cm -3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication ofmore » a semiconductor scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm 3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less

Fluorescence Lifetime Imaging Microscopy (FLIM) of quantum dots in living cells

NASA Astrophysics Data System (ADS)

Nadeau, Jay; Carlini, Lina

2013-02-01

Fluorescence lifetime imaging microscopy (FLIM) is an emerging imaging technique that can indicate environmental factors such as pH and redox potential by the effect of these factors on the fluorescence lifetimes of fluorophores. Semiconductor quantum dots (QDs) are highly sensitive to environment and so are ideal for use in FLIM, although certain experimental parameters must be carefully considered for QD imaging to account for their long lifetimes and two-photon behavior. We image the uptake of three types of QDs in cultured fibroblasts and show some preliminary results on the effects of endosomes and lysosomes on QD lifetimes. These results indicate the feasibility of FLIM for studies using QDs in live cells.