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Sample records for semiconductor radiation-detector research

  1. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  2. Electron gas grid semiconductor radiation detectors

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  3. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  4. Hybrid anode for semiconductor radiation detectors

    DOEpatents

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  5. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  6. Method for mapping charge pulses in semiconductor radiation detectors

    SciTech Connect

    Prettyman, T.H.

    1998-12-01

    An efficient method for determining the distribution of charge pulses produced by semiconductor detectors is presented. The method is based on a quasi-steady-state model for semiconductor detector operation. A complete description of the model and underlying assumptions is given. Mapping of charge pulses is accomplished by solving an adjoint carrier continuity equation. The solution of the adjoint equation yields Green`s function, a time- and position-dependent map that contains all possible charge pulses that can be produced by the detector for charge generated at discrete locations (e.g., by gamma-ray interactions). Because the map is generated by solving a single, time-dependent problem, the potential for reduction in computational effort over direct mapping methods is significant, particularly for detectors with complex electrode structures. In this paper, the adjoint equation is derived and the mapping method is illustrated for a simple case.

  7. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    SciTech Connect

    Harrison, Richard Karl; Howell, Stephen Wayne; Martin, Jeffrey B.; Hamilton, Allister B.

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  8. PASSIVATION OF SEMICONDUCTOR SURFACES FOR IMPROVED RADIATION DETECTORS: X-RAY PHOTOEMISSION ANALYSIS

    SciTech Connect

    Nelson, A; Conway, A; Reinhardt, C; Ferreira, J; Nikolic, R; Payne, S

    2007-12-10

    Surface passivation of device-grade radiation detector materials was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements before and after various chemical treatments. Specifically Br-MeOH (2% Br), KOH with NH{sub 4}F/H{sub 2}O{sub 2} and NH{sub 4}OH solutions were used to etch, reduce and oxidize the surface of Cd{sub (1-x)}Zn{sub x}Te semiconductor crystals. Scanning electron microscopy was used to evaluate the resultant microscopic surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for improved radiation detector devices.

  9. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  10. Research on radiation detectors, boiling transients, and organic lubricants

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.

  11. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  12. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

    DOEpatents

    Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

    2012-09-04

    In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

  13. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, D.C.

    1980-12-17

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips.

  14. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, Dimitrios C.

    1983-01-01

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

  15. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    SciTech Connect

    Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold; Berding, Martha; Burger, Arnold

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  16. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    SciTech Connect

    James, Ralph

    2010-08-18

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  17. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security.

  18. The development of a high count rate neutron flux monitoring channel using silicon carbide semiconductor radiation detectors

    NASA Astrophysics Data System (ADS)

    Reisi Fard, Mehdi

    In this dissertation, a fast neutron flux-monitoring channel, which is based on the use of SiC semiconductor detectors is designed, modeled and experimentally evaluated as a power monitor for the Gas Turbine Modular Helium Reactors. A detailed mathematical model of the SiC diode detector and the electronic processing channel is developed using TRIM, MATLAB and PSpice simulation codes. The flux monitoring channel is tested at the OSU Research Reactor. The response of the SiC neutron-monitoring channel to neutrons is in close agreement to simulation results. Linearity of the channel response to thermal and fast neutron fluxes, pulse height spectrum of the channel, energy calibration of the channel and the detector degradation in a fast neutron flux are presented. Along with the model of the neutron monitoring channel, a Simulink model of the GT-MHR core has been developed to evaluate the power monitoring requirements for the GT-MHR that are most demanding for the SiC diode power monitoring system. The Simulink model is validated against a RELAP5 model of the GT-MHR. This dyanamic model is used to simulate reactor transients at the full power and at the start up, in order to identify the response time requirements of the GT-MHR. Based on the response time requirements that have been identified by the Simulink model and properties of the monitoring channel, several locations in the central reflector and the reactor cavity are identified to place the detector. The detector lifetime and dynamic range of the monitoring channel at the detector locations are calculated. The channel dynamic range in the GT-MHR central reflector covers four decades of the reactor power. However, the detector does not survive for a reactor refueling cycle in the central reflector. In the reactor cavity, the detector operates sufficiently long; however, the dynamic range of the channel is smaller than the dynamic range of the channel in the central reflector.

  19. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2015-07-28

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  20. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2014-04-22

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  1. Novel Surface Preparation and Contacts for CdZnTe Nuclear Radiation Detectors Using Patterned Films of Semiconductors and Insulators

    NASA Astrophysics Data System (ADS)

    Burger, Arnold; Groza, Michael; Conway, Adam; Payne, Steve

    2013-04-01

    The semiconductor Cadmium Zinc Telluride (CZT) has emerged as the material of choice for room temperature detection of X-rays and gamma-rays. The detectors will cover the energy range from 30 keV to several MeV, and will achieve excellent 662 keV energy resolution. The development of high resolution gamma ray detectors based on CZT is dependent on low electronic noise levels. One common source of noise is the surface leakage current, which limits the performance of advanced readout schemes such as the coplanar grid and pixelated architectures with steering grids. Excessive bulk leakage current can result from one of several surface effects: leaky native oxides, unsatisfied bonds, and surface damage. We propose to fabricate and test oriented [111] CZT crystals with thicknesses up to 1.5 cm with an innovative detection technique based on co-planar or other electron only transport designs using plasma processing, thin film sputtering, chemical passivation and wet etching techniques. Compared to conventional pixel detectors, the proposed contact configuration needs lower power consumption and a lower cost. The detector design can be used for building very low-cost handheld radiation detection devices.

  2. Tin Can Radiation Detector.

    ERIC Educational Resources Information Center

    Crull, John L.

    1986-01-01

    Provides instructions for making tin can radiation detectors from empty aluminum cans, aluminum foil, clear plastic, copper wire, silica gel, and fine, unwaxed dental floss put together with tape or glue. Also provides suggestions for activities using the detectors. (JN)

  3. Radiation Detectors and Art

    NASA Astrophysics Data System (ADS)

    Denker, Andrea

    The use of radiation detectors in the analysis of art objects represents a very special application in a true interdisciplinary field. Radiation detectors employed in this field detect, e.g., x-rays, γ-rays, β particles, and protons. Analyzed materials range from stones, metals, over porcelain to paintings. The available nondestructive and noninvasive analytical methods cover a broad range of techniques. Hence, for the sake of brevity, this chapter will concentrate on few techniques: Proton Induced X-ray Emission (PIXE) and Proton Induced γ-ray Emission (PIGE).

  4. Electromagnetic radiation detector

    DOEpatents

    Benson, Jay L.; Hansen, Gordon J.

    1976-01-01

    An electromagnetic radiation detector including a collimating window, a cathode member having a photoelectric emissive material surface angularly disposed to said window whereby radiation is impinged thereon at acute angles, an anode, separated from the cathode member by an evacuated space, for collecting photoelectrons emitted from the emissive cathode surface, and a negatively biased, high transmissive grid disposed between the cathode member and anode.

  5. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ``single carrier`` response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus.

  6. Handheld CZT radiation detector

    DOEpatents

    Murray, William S.; Butterfield, Kenneth B.; Baird, William

    2004-08-24

    A handheld CZT radiation detector having a CZT gamma-ray sensor, a multichannel analyzer, a fuzzy-logic component, and a display component is disclosed. The CZT gamma-ray sensor may be a coplanar grid CZT gamma-ray sensor, which provides high-quality gamma-ray analysis at a wide range of operating temperatures. The multichannel analyzer categorizes pulses produce by the CZT gamma-ray sensor into channels (discrete energy levels), resulting in pulse height data. The fuzzy-logic component analyzes the pulse height data and produces a ranked listing of radioisotopes. The fuzzy-logic component is flexible and well-suited to in-field analysis of radioisotopes. The display component may be a personal data assistant, which provides a user-friendly method of interacting with the detector. In addition, the radiation detector may be equipped with a neutron sensor to provide an enhanced mechanism of sensing radioactive materials.

  7. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  8. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  9. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at the NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  10. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  11. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  12. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  13. Ionizing radiation detector

    DOEpatents

    Thacker, Louis H.

    1990-01-01

    An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

  14. Bismuth tri-iodide radiation detector development

    NASA Astrophysics Data System (ADS)

    Gokhale, Sasmit S.

    Bismuth tri-iodide is an attractive material for room temperature radiation detection. BiI3 demonstrates a number of properties that are apt for semiconductor radiation detection, especially gamma ray spectroscopy. The high atomic number (ZBi = 83 and ZI = 53) and the relatively high density (5.78 g/cm3) cause the material to have good photon stopping power, while the large band-gap (1.67 eV ) allows it to function as a room temperature radiation detector without any cooling mechanism. This work presents the fabrication and characterization of BiI3 radiation detectors. For the purpose of this research detectors were fabricated by cutting BiI3 crystal boules, followed by mechanical and chemical surface treatments. Detectors with various electrode geometries enabling single polarity charge sensing were fabricated. The electrical characteristics and the radiation response of the detectors were measured. The radiation response measurement was performed at room temperature using a 241Am alpha particle source and a 241Am sealed gamma-ray source. The spectral resolutions of the detectors varied from 2.09% - 6.1% for 59.5 keV gamma-rays and between 26% - 40% for 5.48 MeV alpha particles. Charge carrier properties such as the electron and hole mobility and lifetime were also estimated. The electron mobility for an ultrapure BiI 3 detector was estimated to be approximately 433 cm 2/Vs while that for antimony doped BiI3 was estimated to be around 956 cm2/Vs and the mobility-lifetime product for electrons was estimated to be around 5.44 x 10-4 cm 2/V. Detector simulation was performed using the Monte Carlo simulation code MCNP5. A Matlab script which incorporates charge carrier trapping and statistical variation was written to generate a gamma-ray spectrum from the simulated energy deposition spectra. Measured and simulated spectra were compared to extract the charge carrier mobility-lifetime products, which for electrons and holes were estimated to be 5 x 10-3 cm2/V and 1.3 x

  15. Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

    NASA Astrophysics Data System (ADS)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Lee, Dong Hun; Cho, Seung Yeon; Ha, Jang Ho

    2015-06-01

    Si PIN photodiode radiation detectors with three different active areas (3×3 mm2, 5×5 mm2, and 10×10 mm2) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm2 active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to -23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At -23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity.

  16. Semiconductor radiation detector with internal gain

    DOEpatents

    Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

    2003-04-01

    An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

  17. The PAMELA Transition Radiation Detector

    NASA Astrophysics Data System (ADS)

    Cafagna, Francesco

    A Transition Radiation Detector (TRD) has been developed for the PAMELA instrument. PAMELA is a satellite born magnetic spectrometer; its primary scientific objective is the study of antiparticles in cosmic rays. The TRD detector was developed to provide particle identification, in addition to calorimetric measurements. This detector is composed of 9 active layers made of proportional straw tubes, piled up with interleaved carbon fibers radiator layers. Detector description and test beam performances will be presented.

  18. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    NASA Astrophysics Data System (ADS)

    Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  19. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    SciTech Connect

    Golshani, Negin Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N{sub 2}, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  20. Low-Power Multi-Aspect Space Radiation Detector System

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave; Freeman, Jon C.; Burkebile, Stephen P.

    2012-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of all of these detector technologies will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the deep space radiation field.

  1. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  2. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, Dimitrios C.; Fox, Richard J.

    1981-01-01

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  3. Radiation detector arrangements and methods

    SciTech Connect

    Jackson, J.

    1989-08-01

    The patent describes a radiation detector arrangement. It comprises at least one detector element in the form of a temperature-sensitive resistor whose electrical resistance changes in response to radiation incident on the detector element, the resistor having a high positive temperature coefficient of electrical resistance at a transition in its electrical conductance, circuit means for applying a voltage across the resistor during operation of the detector arrangement, and temperature-regulation means for regulating the temperature of the resistor so as to operate the resistor in the transition, characterised in that the temperature-regulation means comprises the resistor and the circuit means which passes sufficient current through the resistor by resistance heating to a position in the transition at which a further increase in its temperature in response to incident radiation reduces the resistance heating by reducing the current, thereby stabilizing the temperature of the resistor at the position. The positive temperature coefficient at the position being sufficiently high that the change in the resistance heating produced by a change in the temperature of the resistor at the position is larger than a change in power of the incident radiation required to produce that same change in temperature of the resistor in the absence of any change in resistance heating.

  4. Prospects for research on semiconductor materials surfaces

    NASA Astrophysics Data System (ADS)

    Shaw, Robert W., Jr.; Zavada, John M.; Spielvogel, Bernard F.

    1987-01-01

    The workshop, Prospects for Research on Semiconductor Materials Surfaces, was held at the Army Research Office, Research Triangle Park, N.C. on November 12, 1986. It was sponsored by ARO and organized by Robert Shaw, John Zavada, and Bernard Spielvogel. The workshop emphasized experiments to probe surface chemistry of semiconductor materials with the eventual goal of improved devices. Participants came from university, industrial, and Army laboratories and discussed current basic research activities, identified neglected research areas with high potential payoff, and developed specific research recommendations. This report provides the summary notes of the workshop.

  5. Alpha particle response study of polycrstalline diamond radiation detector

    NASA Astrophysics Data System (ADS)

    Kumar, Amit; Topkar, Anita

    2016-05-01

    Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

  6. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 2 2012-10-01 2012-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are...

  7. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 2 2014-10-01 2014-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are...

  8. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 2 2013-10-01 2013-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are...

  9. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 2 2010-10-01 2010-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are...

  10. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 2 2011-10-01 2011-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are...

  11. Radiation detectors: needs and prospects

    SciTech Connect

    Armantrout, G.A.

    1981-01-01

    Important applications for x- and ..gamma..-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI/sub 2/, have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties.

  12. International Semiconductor Device Research Symposium (ISDRS-91)

    NASA Astrophysics Data System (ADS)

    Shur, Michael; Money, John M.

    1992-03-01

    The First International Semiconductor Device Research Symposium took place in Charlottesville, VA, on 4-6 Dec. 1991 for the purpose of providing a convenient forum for the exchange of information and new ideas for researchers from industry, university, and government laboratories with leading researchers from the US, Canada, Europe, Asia, and the former Soviet Union. As the first international conference of its kind to take place after the Aug. 1991 coup attempt in the Soviet Union, it was unique with the presence of an unusually large contingent of Russian scientists. The emphasis of the program was on advanced semiconductor technologies still in their infancy whose tangible technological outcomes are not expected for another five to ten years. Some of the technologies discussed at the symposium included bandgap engineering, large area semiconductor electronics, new millimeter wave and optoelectronic technologies, and silicon carbide and diamond devices.

  13. International Semiconductor Device Research Symposium (ISDRS-91)

    NASA Astrophysics Data System (ADS)

    Shur, Michael

    1992-03-01

    The First International Semiconductor Device Research Symposium (ISDRS-91) took place in Charlottesville, Va on December 4-6, 1991 for the purpose of providing a convenient forum for the exchange of information and new ideas for researchers from industry, university, and government laboratories with leading researchers from the United States, Canada, Europe, Asia, and the former Soviet Union. As the first international conference of its kind to take place after the August 1991 coup attempt in the Soviet Union, it was unique with the presence of an unusually large contingent of Russian scientists. The emphasis of the program was on novel ideas such as advanced semiconductor technologies still in their infancy whose tangible technological outcomes are not expected for another five to ten years. Some of the technologies discussed at the symposium included bandgap engineering, large area semiconductor electronics, new millimeter wave and opto-electronics technologies, and silicon carbide and diamond devices.

  14. Infrared receiver having a cooled radiation detector

    SciTech Connect

    Van Antwerpen, H. C.

    1985-04-09

    An infrared receiver having an infrared radiation detector cooled by means of a cold-gas engine, the thermal contact between a cooling surface of the cold-gas engine and the radiation detector being obtained by an elastic thermally conducting bridge. The cylindrical bridge is comprised of a plurality of turns of a metal strip. Due to the presence of the bridge, a good thermal conduction and further a compensation for differences in thermal expansion coefficients of the materials used are obtained. The infrared receiver is particularly suitable for night vision apparatus.

  15. Radiation hardness characteristics of Si-PIN radiation detectors

    NASA Astrophysics Data System (ADS)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    The Korea Atomic Energy Research Institute (KAERI) has fabricated Si-PIN radiation detectors with low leakage current, high resistivity (>11 kΩ cm) and low capacitance for high-energy physics and X-ray spectroscopy. Floating-zone (FZ) 6-in. diameter N-type silicon wafers, with <1 1 1> crystal orientation and 675 μm thick, were used in the detector fabrication. The active areas are 3 mm×3 mm, 5 mm×5 mm and 10 mm×10 mm. We used a double deep-diffused structure at the edge of the active area for protection from the surface leakage path. We also compared the electrical performance of the Si-PIN detector with anti-reflective coating (ARC). For a detector with an active area of 3 mm×3 mm, the leakage current is about 1.9 nA and 7.4 nA at a 100 V reverse bias voltage, and 4.6 pF and 4.4 pF capacitance for the detector with and without an ARC, respectively. In addition, to compare the energy resolution in terms of radiation hardness, we measured the energy spectra with 57Co and 133Ba before the irradiation. Using developed preamplifiers (KAERI-PA1) that have ultra-low noise and high sensitivity, and a 3 mm×3 mm Si-PIN radiation detector, we obtained energy resolutions with 122 keV of 57Co and 81 keV of 133Ba of 0.221 keV and 0.261 keV, respectively. After 10, 100, 103, 104 and 105 Gy irradiation, we tested the characteristics of the radiation hardness on the Si-PIN radiation detectors in terms of electrical and energy spectra performance changes. The fabricated Si-PIN radiation detectors are working well under high dose irradiation conditions.

  16. Simple classical model for Fano statistics in radiation detectors

    NASA Astrophysics Data System (ADS)

    Jordan, David V.; Renholds, Andrea S.; Jaffe, John E.; Anderson, Kevin K.; René Corrales, L.; Peurrung, Anthony J.

    2008-02-01

    A simple classical model that captures the essential statistics of energy partitioning processes involved in the creation of information carriers (ICs) in radiation detectors is presented. The model pictures IC formation from a fixed amount of deposited energy in terms of the statistically analogous process of successively sampling water from a large, finite-volume container ("bathtub") with a small dipping implement ("shot or whiskey glass"). The model exhibits sub-Poisson variance in the distribution of the number of ICs generated (the "Fano effect"). Elementary statistical analysis of the model clarifies the role of energy conservation in producing the Fano effect and yields Fano's prescription for computing the relative variance of the IC number distribution in terms of the mean and variance of the underlying, single-IC energy distribution. The partitioning model is applied to the development of the impact ionization cascade in semiconductor radiation detectors. It is shown that, in tandem with simple assumptions regarding the distribution of energies required to create an (electron, hole) pair, the model yields an energy-independent Fano factor of 0.083, in accord with the lower end of the range of literature values reported for silicon and high-purity germanium. The utility of this simple picture as a diagnostic tool for guiding or constraining more detailed, "microscopic" physical models of detector material response to ionizing radiation is discussed.

  17. Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Hitomi, K.; Murayama, T.; Shoji, T.; Suehiro, T.; Hiratate, Y.

    1999-06-01

    Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime ( μτ) product and the energy required to create an electron-hole pair (the ɛ value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV γ-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the ɛ value has been estimated to be about 5.85 eV for the TlBr crystal.

  18. Simple classical model for Fano statistics in radiation detectors

    SciTech Connect

    Jordan, David V.; Renholds, Andrea S.; Jaffe, John E.; Anderson, Kevin K.; Corrales, L. Rene; Peurrung, Anthony J.

    2008-02-01

    A simple classical model that captures the essential statistics of energy partitioning processes involved in the creation of information carriers (ICs) in radiation detectors is presented. The model pictures IC formation from a fixed amount of deposited energy in terms of the statistically analogous process of successively sampling water from a large, finite-volume container (“bathtub”) with a small dipping implement (“shot glass”). The model exhibits sub-Poisson variance in the distribution of the number of ICs generated (the “Fano e_ect”). Elementary statistical analysis of the model clarifies the role of energy conservation in producing the Fano e_ect and yields Fano’s prescription for relating the IC number distribution to the mean and variance of the underlying IC energy distribution. The connection between the model and energy partitioning in semiconductor radiation detectors is illustrated, and the implications of this simple picture for guiding or constraining more detailed, “microscopic” physical models of detector material response to ionizing radiation are discussed.

  19. International Semiconductor Device Research Symposium (ISDRS-93)

    NASA Astrophysics Data System (ADS)

    Shur, Michael

    1994-04-01

    The goal of this second biannual international meeting was to provide a congenial forum for the exchange of information and new ideas for researchers from university, industry and government laboratories in the field of semiconductor devices and device physics. To this end, we have an unusually short period between the submission of papers and the conference, a speedy publication of the proceedings, poster sessions, panel discussions, and a wide dissemination of the conference proceedings. Our other goal is to make this conference truly international. To achieve this, the symposium has sub-committees in Asia, Europe and the former Soviet Union. This conference is organized in cooperation with the IEEE MTT Society, the European Physical Society, the United States National Committee of URSI and the Russian Physical Society. Generous financial support has been provided by the Army Research Office, the Office of Naval Research, the NASA Ames Research Center and the Soros International Science Foundation. Papers cover a broad range of topics, including novel and ultrasmall devices, photonics and optoelectronics, heterostructure and cryogenic devices, wide band gap semiconductors, thin film transistors, MOSFET technology and devices, carrier transport phenomena, materials and device characterization, simulation and modeling. It is hoped that such a broad range of topics will foster a cross-fertilization of the different fields related to semiconductor materials and devices.

  20. The Beginning of Semiconductor Research in Cuba

    NASA Astrophysics Data System (ADS)

    Veltfort, Theodore

    I was invited to Cuba in 1962 to initiate some efforts in semiconductor development. I had been a physicist and senior research engineer with various electronic companies of the "Silicon Valley" of California, south of San Francisco. I had heard of the efforts made by the new revolutionary government of Cuba to advance the level of science and technology, and I was anxious to see what I could do to help.

  1. Integrator Circuitry for Single Channel Radiation Detector

    NASA Technical Reports Server (NTRS)

    Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

    2008-01-01

    Input circuitry is provided for a high voltage operated radiation detector to receive pulses from the detector having a rise time in the range of from about one nanosecond to about ten nanoseconds. An integrator circuit, which utilizes current feedback, receives the incoming charge from the radiation detector and creates voltage by integrating across a small capacitor. The integrator utilizes an amplifier which closely follows the voltage across the capacitor to produce an integrator output pulse with a peak value which may be used to determine the energy which produced the pulse. The pulse width of the output is stretched to approximately 50 to 300 nanoseconds for use by subsequent circuits which may then use amplifiers with lower slew rates.

  2. Semiconductor research capabilities at the Lawrence Berkeley Laboratory

    SciTech Connect

    Not Available

    1987-02-01

    This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source). (DLC)

  3. Development of a plasma panel radiation detector

    SciTech Connect

    Ball, Robert; Beene, James R; Ben Moshe, M.; Benhammou, Yan; Bensimon, B; Chapman, J. Wehrley; Etzion, E; Ferretti, Claudio; Friedman, Dr. Peter S.; Levin, Daniel S.; Silver, Yiftah; Weaverdyck, Curtis; Wetzel, R.; Zhou, Bing; Anderson, T; McKinny, K; Bentefour, E

    2014-11-01

    This article reports on the development and experimental results of commercial plasma display panels adapted for their potential use as micropattern gas radiation detectors. The plasma panel sensor (PPS) design and materials include glass substrates, metal electrodes and inert gas mixtures which provide a physically robust, hermetically sealed device. Plasma display panels used as detectors were tested with cosmic ray muons, beta rays and gamma rays, protons, and thermal neutrons. The results demonstrated rise times and time resolution of a few nanoseconds, as well as sub-millimeter spatial resolution compatible with the pixel pitch.

  4. Processing circuitry for single channel radiation detector

    NASA Technical Reports Server (NTRS)

    Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

    2009-01-01

    Processing circuitry is provided for a high voltage operated radiation detector. An event detector utilizes a comparator configured to produce an event signal based on a leading edge threshold value. A preferred event detector does not produce another event signal until a trailing edge threshold value is satisfied. The event signal can be utilized for counting the number of particle hits and also for controlling data collection operation for a peak detect circuit and timer. The leading edge threshold value is programmable such that it can be reprogrammed by a remote computer. A digital high voltage control is preferably operable to monitor and adjust high voltage for the detector.

  5. Space Research Results Purify Semiconductor Materials

    NASA Technical Reports Server (NTRS)

    2010-01-01

    While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

  6. Device for calibrating a radiation detector system

    DOEpatents

    McFee, M.C.; Kirkham, T.J.; Johnson, T.H.

    1994-12-27

    A device is disclosed for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a ''shield plate'' or shell, and an opposing ''source plate'' containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects. 3 figures.

  7. Device for calibrating a radiation detector system

    DOEpatents

    Mc Fee, Matthew C.; Kirkham, Tim J.; Johnson, Tippi H.

    1994-01-01

    A device for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a "shield plate" or shell, and an opposing "source plate" containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, heart, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects.

  8. Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

    NASA Technical Reports Server (NTRS)

    Barry, Mamadou Y.

    1999-01-01

    The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

  9. Radiation detector system having heat pipe based cooling

    DOEpatents

    Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

    2006-10-31

    A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

  10. Workshop report and presentations from the Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop

    NASA Astrophysics Data System (ADS)

    The Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop was held in Oak ridge, Tennessee, on November 2-3, 1987. It was to provide a forum for representatives of the national laboratories, DOE, and the semiconductor industry in which to discuss capabilities of the national laboratories which could contribute to the future competitiveness of the US semiconductor industry, to identify specific large and small projects at the national laboratories which would be of direct benefit to the semiconductor industry, and to find ways of implementing these projects. Numerous small projects were identified which would utilize unique capabilities of the national laboratories in advanced ion implantation, plasma processing (including electron cyclotron resonance plasmas), ion and cluster beam deposition, materials characterization, electronic packaging, and laser processing and deposition. Five large-scale candidate projects were identified in synchrotron x-ray lithography, silicon process integration, advanced materials processing science, process analysis and diagnostics, and ultra clean room engineering. The major obstacle to implementing these projects if the lack of appropriate funds to initiate and stimulate interactions between the national laboratories and the semiconductor industry. SEMATECH and the federal government are potential sources of seed funds for these projects. The Semiconductor Research Corporation is ideally suited to interface the semiconductor industry and the national laboratories for many of these interactions.

  11. Material analysis of the CZT crystal grown for a radiation detector

    NASA Astrophysics Data System (ADS)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Kim, Dong Jin; Choi, Hyo Jeong

    2015-01-01

    Room-temperature semiconductor radiation detectors, such as CdZnTe (CZT) and CdTe detectors, are being developed and grown worldwide owing to their high performances as a gamma-ray detector. A 2″ CZT ingot was grown using a 6-zone low-pressure (LP) Bridgman furnace at the Korea Atomic Energy Research Institute (KAERI). To increase the resistivity, indium (In) was doped at 5 ppm and 7 ppm, respectively. Material analysis results obtained by using inductively coupled plasma mass spectrometry (ICP-MS), X-ray diffractometry (XRD), and an infrared (IR) scope system were compared with the I-V results with respect to the location on the grown ingots and doping concentration. A (1,1,1) orientation and 1.41 × 1011 Ω·cm resistivity were measured in the middle part of the ingot. In addition, Te inclusions were also homogeneously shown. The variation in the I-V characteristics with respect to the preparation conditions of the crystals was also addressed.

  12. New radiation detectors for field measurements

    SciTech Connect

    Bhattacharjie, A.; Quam, W.

    1993-12-31

    Two new types of radiation detectors are discussed; the first is a large area TLD and the second is a high pressure xenon proportional counter. The large area TLD can be used to measure In situ alpha activity with high spatial resolution and high sensitivity. Some field measurements are presented. The high pressure xenon proportional counter (XGPC) is capable of realtime survey work and monitoring of plutonium (through detection of the 60 keV Americium-241 gamma ray) and uranium. Spectral resolution data from the 8 atmosphere proportional counter are presented. In many applications the counting efficiency penalty due to low stopping power of xenon at higher gamma energies can be offset by increasing gas pressure and using physically long counters.

  13. Silicon radiation detectors: materials and applications

    SciTech Connect

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented.

  14. Women's Presence in the Development of Semiconductor Physics and Semiconductor Devices Research in Cuba (abstract)

    NASA Astrophysics Data System (ADS)

    Vigil, Elena

    2009-04-01

    Physics research did not exist in prerevolutionary Cuba. In 1962, Cuban university programs were reformed and Havana University's School of Physics was created. Equal opportunities for women and science development were made high priorities during university reform. In the early 1960s the growth of physics research began, particularly in semiconductors. This research is reviewed, emphasizing the presence and accomplishments of the women involved. Women physicists havr authored papers regarding the first alloyed semiconductor diode in 1967; IREs and LEDs (discrete, as well as integrated digits) in the 1970s; epitaxial growth in space; and LED and IRE technology transfer to the Cuban semiconductor industry in the 1980s. Women's current active role in solar cell research is also reviewed.

  15. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  16. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  17. Portable radiation detector and mapping system

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1995-09-01

    A portable radiation detector and mapping system (RADMAPS) has been developed to detect, locate and plot nuclear radiation intensities on commercially available digital maps and other images. The field unit records gamma-ray spectra or neutron signals together with positions from a Global Positioning System (GPS) on flash memory cards. The recorded information is then transferred to a lap-top computer for spectral data analyses and then georegistered graphically on maps, photographs, etc. RADMAPS integrates several existing technologies to produce a preprogrammable field unit uniquely suited for each survey, as required. The system presently records spectra from a Nal(Tl) gamma-ray detector or an enriched Li-6 doped glass neutron scintillator. Standard Geographic Information System software installed in a lap-top, complete with CD-ROM supporting digitally imaged maps, permits the characterization of nuclear material in the field when the presence of such material is not otherwise documented. This paper gives the results of a typical site survey of the Savannah River Site (SRS) using RADMAPS.

  18. Portable radiation detector and mapping system

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1995-12-31

    A portable radiation detector and mapping system (RADMAPS) has been developed to detect, locate, and plot nuclear radiation intensities on commercially available digital maps and other images. The field unit records gamma-ray spectra or neutron signals together with positions from a global positioning system (GPS) on flash memory cards. The recorded information is then transferred to a laptop computer for spectral data analyses and then georegistered graphically on maps, photographs, etc. RADMAPS integrates several existing technologies to produce a preprogrammable field unit uniquely suited for each survey, as required. The system records spectra from a NaI(Tl) gamma-ray detector or an enriched {sup 6}Li doped glass neutron scintillator. Standard Geographic Information System (GIS) software installed in a lap-top, complete with CD-ROM supporting digitally imaged maps, permits the characterization of nuclear material in the field when the presence of such material is not otherwise documented. This paper gives the results of a typical site survey of the Savannah River site (SRS) using RADMAPS. The ability to provide rapid field data should be of use in treaty verification, safeguards, decontamination, and nuclear weapons dismantlement.

  19. Wire chamber radiation detector with discharge control

    DOEpatents

    Perez-Mendez, Victor; Mulera, Terrence A.

    1984-01-01

    A wire chamber radiation detector (11) has spaced apart parallel electrodes (16) and grids (17, 18, 19) defining an ignition region (21) in which charged particles (12) or other ionizing radiations initiate brief localized avalanche discharges (93) and defining an adjacent memory region (22) in which sustained glow discharges (94) are initiated by the primary discharges (93). Conductors (29, 32) of the grids (18, 19) at each side of the memory section (22) extend in orthogonal directions enabling readout of the X-Y coordinates of locations at which charged particles (12) were detected by sequentially transmitting pulses to the conductors (29) of one grid (18) while detecting transmissions of the pulses to the orthogonal conductors (36) of the other grid (19) through glow discharges (94). One of the grids (19) bounding the memory region (22) is defined by an array of conductive elements (32) each of which is connected to the associated readout conductor (36) through a separate resistance (37). The wire chamber (11) avoids ambiguities and imprecisions in the readout of coordinates when large numbers of simultaneous or near simultaneous charged particles (12) have been detected. Down time between detection periods and the generation of radio frequency noise are also reduced.

  20. Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    2014-01-01

    Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

  1. Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships

    ERIC Educational Resources Information Center

    Logar, Nathaniel; Anadon, Laura Diaz; Narayanamurti, Venkatesh

    2014-01-01

    In the study of innovation institutions, it is important to consider how different institutional models can affect a research organization in conducting or funding successful work. As an industry collaborative, Semiconductor Research Corporation (SRC) provides an example of a privately funded institution that leverages the inputs of several member…

  2. Field Testing of a Portable Radiation Detector and Mapping System

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1998-03-01

    Researchers at the Savannah River Site (SRS) have developed a man- portable radiation detector and mapping system (RADMAPS) which integrates the accumulation of radiation information with precise ground locations. RADMAPS provides field personnel with the ability to detect, locate, and characterize nuclear material at a site or facility by analyzing the gamma or neutron spectra and correlating them with position. the man-portable field unit records gamma or neutron count rate information and its location, along with date and time, using an embedded Global Positioning System (GPS). RADMAPS is an advancement in data fusion, integrating several off-the-shelf technologies with new computer software resulting in a system that is simple to deploy and provides information useful to field personnel in an easily understandable form. Decisions on subsequent actions can be made in the field to efficiently use available field resources. The technologies employed in this system include: recording GPS, radiation detection (typically scintillation detectors), pulse height analysis, analog-to-digital converters, removable solid-state (Flash or SRAM) memory cards, Geographic Information System (GIS) software and personal computers with CD-ROM supporting digital base maps. RADMAPS includes several field deployable data acquisition systems designed to simultaneously record radiation and geographic positions. This paper summarizes the capabilities of RADMAPS and some of the results of field tests performed with the system.

  3. Development of a silicon carbide radiation detector

    SciTech Connect

    Ruddy, F.H.; Dulloo, A.R.; Seidel, J.G.; Seshadri, S.; Rowland, L.B.

    1998-06-01

    The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested. Exposure to alpha particles from a {sup 238}Pu source led to robust signals from the detectors. The resolution of the Schottky SiC detector was 5.8% (FWHM) at an energy of 294 keV, while that of the p-n junction was 6.6% (FWHM) at 260 keV. No effect of temperature in the range of 22 to 89 C was observed on the characteristics of the {sup 238}Pu alpha-induced signal from the SiC detector. In addition, testing in a gamma field of 10,000 rad-Si h{sup {minus}1} showed that the alpha-induced signal was separable from the gamma signal.

  4. Large dynamic range radiation detector and methods thereof

    DOEpatents

    Marrs, Roscoe E.; Madden, Norman W.

    2012-02-14

    According to one embodiment, a radiation detector comprises a scintillator and a photodiode optically coupled to the scintillator. The radiation detector also includes a bias voltage source electrically coupled to the photodiode, a first detector operatively electrically coupled to the photodiode for generating a signal indicative of a level of a charge at an output of the photodiode, and a second detector operatively electrically coupled to the bias voltage source for generating a signal indicative of an amount of current flowing through the photodiode.

  5. R&D for Better Nuclear Security: Radiation Detector Materials

    SciTech Connect

    Kammeraad, J E

    2009-04-02

    I am going to talk about the need for better materials for radiation detectors. I believe that government investment in this area can enable transformational technology change that could impact domestic nuclear security and also national nuclear security in some very positive and powerful ways. I'm not going to give you a lecture on how radiation detectors work, but I am going to tell you a bit about today's off-the-shelf technology and why it is not sufficient, what we need, and what security benefit you could get from improvements. I think we're at a critical point in time for some very impactful investments. In particular I'm going to focus on the use of gamma-ray radiation detectors at ports of entry. Not long before DHS was formed, Congress decreed that counter measures against the delivery of radiological and nuclear threats would be put in place at US ports of entry, under the authority of US Customs (later Customs and Border Protection in DHS). This included the screening of all cars and trucks passing through a port of entry. Existing off-the-shelf radiation detectors had to be selected for this purpose. Plans were made to make the most of the available technologies, but there are some inherent limitations of these detectors, plus the operational setting can bring out other limitations.

  6. A hybrid radiation detector based on a plasma display panel

    NASA Astrophysics Data System (ADS)

    Cho, Sungho; Lee, Rena; Yun, Min-Seok; Jang, Gi-Won; Park, Jikoon; Choi, Jang-Yong; Nam, Sanghee

    2009-10-01

    Recently, large-area image detectors have been investigated for X-ray imaging in medical diagnostic and other applications. In this paper, a new type of radiation detector is described, based on the integration of a photoconductor into a plasma display panel (PDP). This device, called a hybrid PDP detector, should be quite inexpensive, because it can directly leverage off the fabrication and materials technologies widely used in plasma display panels. Also, these new radiation detectors should operate under the most challenging environmental conditions, because they are inherently rugged and radiation-resistant and insensitive to magnetic fields. In this paper, we describe a hybrid digital radiation detector device, based on plasma display. The PDP panel is 7 in. in size with a 1000-μm pixel pitch, and filled with 700 Torr of Xe gas; the hybrid PDP panel is of the same structure, except for the photoconductor deposit. The glass absorption, dark current, X-ray sensitivity, and linearity as a function of electric field were measured to investigate its electrical properties. From the results, stabilized dark current density and significant X-ray sensitivity were obtained with both panels; however, the hybrid PDP detector showed better characteristics than the PDP detector. It also had good signal response and linearity. The hybrid digital radiation detector device based on a plasma display seems to be a promising technology for use in radiology and dynamic moving imaging.

  7. Real-time self-networking radiation detector apparatus

    DOEpatents

    Kaplan, Edward; Lemley, James; Tsang, Thomas Y.; Milian, Laurence W.

    2007-06-12

    The present invention is for a radiation detector apparatus for detecting radiation sources present in cargo shipments. The invention includes the features of integrating a bubble detector sensitive to neutrons and a GPS system into a miniaturized package that can wirelessly signal the presence of radioactive material in shipping containers. The bubble density would be read out if such indicated a harmful source.

  8. Second International Semiconductor Device Research Symposium (ISDRS-1993)

    NASA Astrophysics Data System (ADS)

    Shur, Michael; Money, John M.

    1994-04-01

    The goal of this second biannual international meeting was to provide a congenial forum for the exchange of information and new ideas for researchers from university, industry and government laboratories in the field of semiconductor devices and device physics. To this end, we have an unusually short period between the submission of papers and the conference, a speedy publication of the proceedings, poster sessions, panel discussions, and a wide dissemination of the conference proceedings. Our other goal is to make this conference truly international. To achieve this, the symposium has sub-committees in Asia, Europe and the former Soviet Union. This conference is organized in cooperation with the IEEE MTT Society, the European Physical Society, the United States National Committee of URSI and the Russian Physical Society. Generous financial support has been provided by the Army Research Office, the Office of Naval Research, the NASA Ames Research Center and the Soros International Science Foundation. Papers cover a broad range of topics, including novel and ultrasmall devices, photonics and optoelectronics, heterostructure and cryogenic devices, wide band gap semiconductors, thin film transistors, MOSFET technology and devices, carrier transport phenomena, materials and device characterization, simulation and modeling. It is hoped that such a broad range of topics will foster a cross-fertilization of the different fields related to semiconductor materials and devices.

  9. Characterization of Thallium Bromide (TlBr) for Room Temperature Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Smith, Holland McTyeire

    Thallium bromide (TlBr) has emerged as a remarkably well-suited material for room temperature radiation detection. The unique combination of high-Z elements, high density, suitable band gap, and excellent electrical transport properties present in TlBr have brought device performance up to par with CdZnTe (CZT), the current market-leading room temperature radiation detector material. TlBr research is at an earlier stage than that of CZT, giving hope that the material will see even further improvement in electronic properties. Improving a resistive semiconductor material requires knowledge of deep levels present in the material and the effects of these deep levels on transport properties. Very few deep level studies have been conducted on TlBr, and none with the depth required to generate useful growth suggestions. In this dissertation, deep levels in nominally undoped and doped TlBr samples are studied with electrical and optical methods. Photo-Induced Conductivity Transient Spectroscopy (PICTS) is used to discover many deep levels in TlBr electrically. These levels are compared to sub-band gap optical transitions originating from defects observed in emission spectra. The results of this research indicate that the origin of resistivity in TlBr is likely due to deep level defects pinning the Fermi level at least ˜0.7 eV from either the conduction or valence band edge. The effect of dopants and deep levels on transport in TlBr is assessed with microwave photoconductivity decay analysis. It is found that Pb-, Se-, and O-doping decreases carrier lifetime in TlBr, whereas C-doping does not. TlBr exhibits weak ionic conductivity at room temperature, which both negatively affects the leakage current of detectors and leads to device degradation over time. Researchers are actively looking for ways to reduce or eliminate the ionic conductivity, but are faced with an intriguing challenge of materials engineering: is it possible to mitigate the ionic conduction of Tl

  10. High-performance diamond radiation detectors produced by lift-off method

    NASA Astrophysics Data System (ADS)

    Shimaoka, Takehiro; Kaneko, Junichi H.; Tsubota, Masakatsu; Shimmyo, Hiroaki; Watanabe, Hideyuki; Chayahara, Akiyoshi; Umezawa, Hitoshi; Shikata, Shin-ichi

    2016-03-01

    For stable semiconductor detector operation under harsh environments, an ideal single-crystal diamond without a charge trapping centre is required. For this study, a self-standing single-crystal CVD diamond was fabricated using a lift-off method. The reduction of charge trapping factors such as structural defects, point defects, and nitrogen impurities, was attempted using 0.2% of low-methane concentration growth and using a full metal seal chamber. A high-quality self-standing diamond with strong free-exciton recombination emission was obtained. Charge collection efficiencies were 100.1% for holes and 99.8% for electrons, provided that \\varepsilon{diamond}= 13.1 \\text{eV} and \\varepsilon{Si}=3.62 \\text{eV} . Energy resolutions were 0.38% for both holes and electrons. We produced a high-performance diamond radiation detector using the productive lift-off method.

  11. Simulation of ion beam induced current in radiation detectors and microelectronic devices.

    SciTech Connect

    Vizkelethy, Gyorgy

    2009-10-01

    Ionizing radiation is known to cause Single Event Effects (SEE) in a variety of electronic devices. The mechanism that leads to these SEEs is current induced by the radiation in these devices. While this phenomenon is detrimental in ICs, this is the basic mechanism behind the operation of semiconductor radiation detectors. To be able to predict SEEs in ICs and detector responses we need to be able to simulate the radiation induced current as the function of time. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. On the other end, TCAD programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. A simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework.

  12. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  13. Device for detachably securing a collimator to a radiation detector

    SciTech Connect

    Hanz, G.J.; Jung, G.; Pflaum, M.

    1986-12-16

    A device is described for detachably securing a collimator to a radiation detector, comprising: (a) a first annular groove means secured to the radiation detector; (b) a second annular groove means secured to the collimator; (c) a split ring having a first and second ring ends, the ring being received in the first annular groove means; and (d) a ring diameter control system, including (d1) a first lever system having two ends; (d2) a second lever system having two ends; and (d3) a rotating hub being rotatably secured to the detector head; wherein the first lever system is rotatably mounted with one end linked to the first ring end and with the other end linked to the rotating hub. The second lever system is rotatably mounted with one end linked to the second ring end and with the other end linked to the rotating hub, such that rotation of the rotating hub moves the first and second lever systems in opposite directions thereby moving the first and second ring ends between a first position, in which the split ring is positioned only in the first annular groove means, and a second position, in which the split ring is located in both the first annular groove means and the second annular groove means, thus attaching the collimator to the radiation detector.

  14. Recent progress in the development of transition radiation detectors

    NASA Technical Reports Server (NTRS)

    Cherry, M. L.; Hartmann, G.; Prince, T.; Mueller, D.

    1978-01-01

    Transition-radiation detectors have been used in several recent cosmic-ray experiments for particle identification at energies E/mc-squared of at least about 1000. In order to optimize the design of such detectors and to use them for energy measurements over a broad energy range, it is necessary to study the details of the transition-radiation process. Experimental results are presented which test the theoretical predictions more precisely and at higher energies than in previous experiments. The dependence of the interference pattern in the frequency spectrum on the radiator dimensions is studied, and the total transition-radiation yield generated by electrons in various radiators is measured over a very wide energy range, from 5 to 300 GeV. The significance of the individual experimental parameters in the design of transition radiation detectors is reviewed, and the characteristics of transition-radiation detectors capable of measuring particle energies over the range E/mc-squared from about 300 to 100,000 are discussed.

  15. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  16. Field Deployable Gamma Radiation Detectors for DHS Use

    SciTech Connect

    Sanjoy Mukhopadhyay

    2007-08-01

    Recently, the Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial off-the-shelf and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS requirements in terms of sensitivity, resolution, response time, and reach-back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron's identiFINDER{trademark}, which primarily uses sodium iodide crystals (3.18 x 2.54cm cylinders) as gamma detectors, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack{trademark} that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity, better resolution, and faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation, and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets an alarm condition. When a substantial alarm level is reached, the system automatically triggers the saving of relevant

  17. Field-deployable gamma-radiation detectors for DHS use

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, Sanjoy

    2007-09-01

    Recently, the Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial off-the-shelf and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS' requirements in terms of sensitivity, resolution, response time, and reach-back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron's identiFINDER TM, which primarily uses sodium iodide crystals (3.18 x 2.54cm cylinders) as gamma detectors, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack TM that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field1. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity, better resolution, and faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation, and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets an alarm condition. When a substantial alarm level is reached, the system automatically triggers the saving of relevant spectral data and

  18. Field Deployable Gamma Radiation Detectors for DHS Use

    SciTech Connect

    Sanjoy Mukhopadhyay

    2007-08-31

    Recently, the U.S. Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS’s requirements in terms of sensitivity, resolution, response time and reach back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron’s identiFINDER™, which primarily uses sodium iodide crystals (3.18-cm x 2.54-cm cylinders) as gamma detector, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack™ that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity (comparable to that of a 7.62-cm x 7.62-cm sodium iodide crystal at low gamma energy ranging from 30 keV to 3,000 keV), better resolution (< 3.0 percent at 662 keV), faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets

  19. Review on the characteristics of radiation detectors for dosimetry and imaging

    NASA Astrophysics Data System (ADS)

    Seco, Joao; Clasie, Ben; Partridge, Mike

    2014-10-01

    The enormous advances in the understanding of human anatomy, physiology and pathology in recent decades have led to ever-improving methods of disease prevention, diagnosis and treatment. Many of these achievements have been enabled, at least in part, by advances in ionizing radiation detectors. Radiology has been transformed by the implementation of multi-slice CT and digital x-ray imaging systems, with silver halide films now largely obsolete for many applications. Nuclear medicine has benefited from more sensitive, faster and higher-resolution detectors delivering ever-higher SPECT and PET image quality. PET/MR systems have been enabled by the development of gamma ray detectors that can operate in high magnetic fields. These huge advances in imaging have enabled equally impressive steps forward in radiotherapy delivery accuracy, with 4DCT, PET and MRI routinely used in treatment planning and online image guidance provided by cone-beam CT. The challenge of ensuring safe, accurate and precise delivery of highly complex radiation fields has also both driven and benefited from advances in radiation detectors. Detector systems have been developed for the measurement of electron, intensity-modulated and modulated arc x-ray, proton and ion beams, and around brachytherapy sources based on a very wide range of technologies. The types of measurement performed are equally wide, encompassing commissioning and quality assurance, reference dosimetry, in vivo dosimetry and personal and environmental monitoring. In this article, we briefly introduce the general physical characteristics and properties that are commonly used to describe the behaviour and performance of both discrete and imaging detectors. The physical principles of operation of calorimeters; ionization and charge detectors; semiconductor, luminescent, scintillating and chemical detectors; and radiochromic and radiographic films are then reviewed and their principle applications discussed. Finally, a general

  20. Radiation detectors as surveillance monitors for IAEA safeguards

    SciTech Connect

    Fehlau, P.E.; Dowdy, E.J.

    1980-10-01

    Radiation detectors used for personnel dosimetry are examined for use under IAEA Safeguards as monitors to confirm the passage or nonpassage (YES/NO) of plutonium-bearing nuclear material at barrier penetrations declared closed. In this application where backgrounds are ill defined, no advantage is found for a particular detector type because of intrinsic efficiency. Secondary considerations such as complexity, ease of tamper-proofing, and ease of readout are used to recommend specific detector types for routine monitoring and for data-base measurements. Recommendations are made for applications, data acquisition, and instrument development.

  1. Radiation detector having a multiplicity of individual detecting elements

    DOEpatents

    Whetten, Nathan R.; Kelley, John E.

    1985-01-01

    A radiation detector has a plurality of detector collection element arrays immersed in a radiation-to-electron conversion medium. Each array contains a multiplicity of coplanar detector elements radially disposed with respect to one of a plurality of positions which at least one radiation source can assume. Each detector collector array is utilized only when a source is operative at the associated source position, negating the necessity for a multi-element detector to be moved with respect to an object to be examined. A novel housing provides the required containment of a high-pressure gas conversion medium.

  2. Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

    NASA Technical Reports Server (NTRS)

    Wagner, L. J.

    1977-01-01

    The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

  3. Room temperature aluminum antimonide radiation detector and methods thereof

    DOEpatents

    Lordi, Vincenzo; Wu, Kuang Jen J.; Aberg, Daniel; Erhart, Paul; Coombs, III, Arthur W; Sturm, Benjamin W

    2015-03-03

    In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

  4. Contributive research in compound semiconductor material and related devices

    NASA Astrophysics Data System (ADS)

    Twist, James R.

    1988-05-01

    The objective of this program was to provide the Electronic Device Branch (AFWAL/AADR) with the support needed to perform state of the art electronic device research. In the process of managing and performing on the project, UES has provided a wide variety of scientific and engineering talent who worked in-house for the Avionics Laboratory. These personnel worked on many different types of research programs from gas phase microwave driven lasers, CVD and MOCVD of electronic materials to Electronic Device Technology for new devices. The fields of research included MBE and theoretical research in this novel growth technique. Much of the work was slanted towards the rapidly developing technology of GaAs and the general thrust of the research that these tasks started has remained constant. This work was started because the Avionics Laboratory saw a chance to advance the knowledge and level of the current device technology by working in the compounds semiconductor field. UES is pleased to have had the opportunity to perform on this program and is looking forward to future efforts with the Avionics Laboratory.

  5. Super-thin single crystal diamond membrane radiation detectors

    SciTech Connect

    Pomorski, Michal; Caylar, Benoit; Bergonzo, Philippe

    2013-09-09

    We propose to use the non-electronic grade (nitrogen content 5 ppb < [N] < 5 ppm) single crystal (sc) chemical vapour deposited (CVD) diamond as a thin-membrane radiation detector. Using deep Ar/O{sub 2} plasma etching it is possible to produce self-supported few micrometres thick scCVD membranes of a size approaching 7 mm × 7 mm, with a very good surface quality. After metallization and contacting, electrical properties of diamond membrane detectors were probed with 5.486 MeV α-particles as an ionization source. Despite nitrogen impurity, scCVD membrane detectors exhibit stable operation, charge collection efficiency close to 100%, with homogenous response, and extraordinary dielectric strength up to 30 V/μm.

  6. Charge transport properties of CdMnTe radiation detectors

    SciTech Connect

    Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

    2012-04-11

    Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

  7. Multiple cell radiation detector system, and method, and submersible sonde

    DOEpatents

    Johnson, Larry O.; McIsaac, Charles V.; Lawrence, Robert S.; Grafwallner, Ervin G.

    2002-01-01

    A multiple cell radiation detector includes a central cell having a first cylindrical wall providing a stopping power less than an upper threshold; an anode wire suspended along a cylindrical axis of the central cell; a second cell having a second cylindrical wall providing a stopping power greater than a lower threshold, the second cylindrical wall being mounted coaxially outside of the first cylindrical wall; a first end cap forming a gas-tight seal at first ends of the first and second cylindrical walls; a second end cap forming a gas-tight seal at second ends of the first and second cylindrical walls; and a first group of anode wires suspended between the first and second cylindrical walls.

  8. BOBCAT Personal Radiation Detector Field Test and Evaluation Campaign

    SciTech Connect

    Chris Hodge

    2008-03-01

    Following the success of the Anole test of portable detection system, the U.S. Department of Homeland Security (DHS) Domestic Nuclear Detection Office organized a test and evaluation campaign for personal radiation detectors (PRDs), also known as “Pagers.” This test, “Bobcat,” was conducted from July 17 to August 8, 2006, at the Nevada Test Site. The Bobcat test was designed to evaluate the performance of PRDs under various operational scenarios, such as pedestrian surveying, mobile surveying, cargo container screening, and pedestrian chokepoint monitoring. Under these testing scenarios, many operational characteristics of the PRDs, such as gamma and neutron sensitivities, positive detection and false alarm rates, response delay times, minimum detectable activities, and source localization errors, were analyzed. This paper will present the design, execution, and methodologies used to test this equipment for the DHS.

  9. Field profile tailoring in a-Si:H radiation detectors

    SciTech Connect

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D. ); Street, R.A. )

    1990-03-01

    The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs.

  10. Personal Radiation Detector Field Test and Evaluation Campaign

    SciTech Connect

    Chris A. Hodge, Ding Yuan, Raymond P. Keegan, Michael A. Krstich

    2007-07-09

    Following the success of the Anole test of portable detection system, the U.S. Department of Homeland Security (DHS) Domestic Nuclear Detection Office organized a test and evaluation campaign for personal radiation detectors (PRDs), also known as 'Pagers'. This test, 'Bobcat', was conducted from July 17 to August 8, 2006, at the Nevada Test Site. The Bobcat test was designed to evaluate the performance of PRDs under various operational scenarios, such as pedestrian surveying, mobile surveying, cargo container screening, and pedestrian chokepoint monitoring. Under these testing scenarios, many operational characteristics of the PRDs, such as gamma and neutron sensitivities, positive detection and false alarm rates, response delay times, minimum detectable activities, and source localization errors, were analyzed. This paper will present the design, execution, and methodologies used to test this equipment for the DHS.

  11. Multi-directional radiation detector using photographic film

    NASA Astrophysics Data System (ADS)

    Junet, L. K.; Majid, Z. A. Abdul; Sapuan, A. H.; Sayed, I. S.; Pauzi, N. F.

    2014-11-01

    Ionising radiation has always been part of our surrounding and people are continuously exposed to it. Ionising radiation is harmful to human health, thus it is vital to monitor the radiation. To monitor radiation, there are three main points that should be observed cautiously, which are energy, quantity, and direction of the radiation sources. A three dimensional (3D) dosimeter is an example of a radiation detector that provide these three main points. This dosimeter is able to record the radiation dose distribution in 3D. Applying the concept of dose detection distribution, study has been done to design a multi-directional radiation detector of different filter thicknesses. This is obtained by designing a cylinder shaped aluminum filter with several layers of different thickness. Black and white photographic material is used as a radiation-sensitive material and a PVC material has been used as the enclosure. The device is then exposed to a radiation source with different exposure factors. For exposure factor 70 kVp, 16 mAs; the results have shown that optical density (OD) value at 135° is 1.86 higher compared with an OD value at 315° which is 0.71 as the 135° area received more radiation compare to 315° region. Furthermore, with an evidence of different angle of film give different value of OD shows that this device has a multidirectional ability. Materials used to develop this device are widely available in the market, thus reducing the cost of development and making it suitable for commercialisation.

  12. Effects of Te inclusions on the performance of CdZnTe radiation detectors

    SciTech Connect

    Bolotnikov,A.E.; Abdul-Jabber, N. M.; Babalola, O. S.; Camarda, G. S.; Cui, Y.; Hossain, A. M.; Jackson, E. M.; Jackson, H. C.; James, J. A.; Kohman, K. T.; Luryi, A. L.; James, R. B.

    2008-10-19

    Te inclusions existing at high concentrations in CdZnTe (CZT) material can degrade the performance of CZT detectors. These microscopic defects trap the free electrons generated by incident radiation, so entailing significant fluctuations in the total collected charge and thereby strongly affecting the energy resolution of thick (long-drift) detectors. Such effects were demonstrated in thin planar detectors, and, in many cases, they proved to be the dominant cause of the low performance of thick detectors, wherein the fluctuations in the charge losses accumulate along the charge's drift path. We continued studying this effect using different tools and techniques. We employed a dedicated beamline recently established at BNL's National Synchrotron Light Source for characterizing semiconductor radiation detectors, along with an IR transmission microscope system, the combination of which allowed us to correlate the concentration of defects with the devices performances. We present here our new results from testing over 50 CZT samples grown by different techniques. Our goals are to establish tolerable limits on the size and concentrations of these detrimental Te inclusions in CZT material, and to provide feedback to crystal growers to reduce their numbers in the material.

  13. Effect of Te Inclusions on the Performance of Cdznte Radiation Detectors

    SciTech Connect

    Bolotnikov, A.; Abdul-Jabbar, N; Babalola, O; Camarda, G; Cui, Y; Hossain, A; Jackson, E; Jackson, H; James, J; et. al.

    2009-01-01

    Te inclusions existing at high concentrations in CdZnTe (CZT) material can degrade the performance of CZT detectors. These microscopic defects trap the free electrons generated by incident radiation, so entailing significant fluctuations in the total collected charge and thereby strongly affecting the energy resolution of thick (long-drift) detectors. Such effects were demonstrated in thin planar detectors, and, in many cases, they proved to be the dominant cause of the low performance of thick detectors, wherein the fluctuations in the charge losses accumulate along the charge's drift path. We continued studying this effect using different tools and techniques. We employed a dedicated beamline recently established at BNL's National Synchrotron Light Source for characterizing semiconductor radiation detectors, along with an IR transmission microscope system, the combination of which allowed us to correlate the concentration of defects with the devices' performances. We present here our new results from testing over 50 CZT samples grown by different techniques. Our goals are to establish tolerable limits on the size and concentrations of these detrimental Te inclusions in CZT material, and to provide feedback to crystal growers to reduce their numbers in the material.

  14. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    SciTech Connect

    B. A. Brunett; J. C. Lund; J. M. Van Scyoc; N. R. Hilton; E. Y. Lee; R. B. James

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors.

  15. Initial performance of the VENUS transition radiation detector

    NASA Astrophysics Data System (ADS)

    Terunuma, N.; Kanda, N.; Sakuda, M.; Chiba, Y.; Fukushima, Y.; Haba, J.; Krüger, A.; Nakano, I.; Nakamura, S.; Ogawa, K.; Ohsugi, T.; Suzuki, A.; Watase, Y.

    1992-12-01

    The VENUS-TRD is a cylindrical transition radiation detector, extending from 127 cm to 157.7 cm radially and 296 cm axially. It is designed to improve the e/π separation capability of the VENUS detector by a factor of 10 in order to complement the lead glass calorimeter. It covers an angular region of cos θ < 0.68 and contains four layers of radiators and X-ray chambers. It has been working very stably since it started data-taking at the TRISTAN e+e- storage ring in June, 1991. The pion rejection power (Rπ = 1/ɛπ) at an electron efficiency of 90% is Rπ = 10+/-1 and 15+/-2 for isolated tracks with a momentum range of 1 < P < 3 and 3 < P < 10 GeV/c, respectively. It decreases to Rπ = 7+/-1 for tracks with P > 1 GeV/c in hadronic events due to overlap of the tracks in the chamber cells of the TRD. The VENUS-TRD is the largest TRD to perform in colliding beam experiments.

  16. Wire-chamber radiation detector with discharge control

    DOEpatents

    Perez-Mendez, V.; Mulera, T.A.

    1982-03-29

    A wire chamber; radiation detector has spaced apart parallel electrodes and grids defining an ignition region in which charged particles or other ionizing radiations initiate brief localized avalanche discharges and defining an adjacent memory region in which sustained glow discharges are initiated by the primary discharges. Conductors of the grids at each side of the memory section extend in orthogonal directions enabling readout of the X-Y coordinates of locations at which charged particles were detected by sequentially transmitting pulses to the conductors of one grid while detecting transmissions of the pulses to the orthogonal conductors of the other grid through glow discharges. One of the grids bounding the memory region is defined by an array of conductive elements each of which is connected to the associated readout conductor through a separate resistance. The wire chamber avoids ambiguities and imprecisions in the readout of coordinates when large numbers of simultaneous or; near simultaneous charged particles have been detected. Down time between detection periods and the generation of radio frequency noise are also reduced.

  17. Improved gas mixtures for gas-filled radiation detectors

    DOEpatents

    Christophorou, L.G.; McCorkle, D.L.; Maxey, D.V.; Carter, J.G.

    1980-03-28

    Improved binary and ternary gas mixtures for gas-filled radiation detectors are provided. The components are chosen on the basis of the principle that the first component is one molecular gas or mixture of two molecular gases having a large electron scattering cross section at energies of about 0.5 eV and higher, and the second component is a noble gas having a very small cross section at and below about 1.0 eV, whereby fast electrons in the gaseous mixture are slowed into the energy range of about 0.5 eV where the cross section for the mixture is small and hence the electron mean free path is large. The reduction in both the cross section and the electron energy results in an increase in the drift velocity of the electrons in the gas mixtures over that for the separate components for a range of E/P (pressure-reduced electric field) values. Several gas mixtures are provided that provide faster response in gas-filled detectors for convenient E/P ranges as compared with conventional gas mixtures.

  18. Gas mixtures for gas-filled radiation detectors

    DOEpatents

    Christophorou, Loucas G.; McCorkle, Dennis L.; Maxey, David V.; Carter, James G.

    1982-01-05

    Improved binary and ternary gas mixtures for gas-filled radiation detectors are provided. The components are chosen on the basis of the principle that the first component is one molecular gas or mixture of two molecular gases having a large electron scattering cross section at energies of about 0.5 eV and higher, and the second component is a noble gas having a very small cross section at and below about 1.0 eV, whereby fast electrons in the gaseous mixture are slowed into the energy range of about 0.5 eV where the cross section for the mixture is small and hence the electron mean free path is large. The reduction in both the cross section and the electron energy results in an increase in the drift velocity of the electrons in the gas mixtures over that for the separate components for a range of E/P (pressure-reduced electric field) values. Several gas mixtures are provided that provide faster response in gas-filled detectors for convenient E/P ranges as compared with conventional gas mixtures.

  19. Three-dimensional architecture for solid state radiation detectors

    DOEpatents

    Parker, S.

    1999-03-30

    A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals. 45 figs.

  20. Three-dimensional architecture for solid state radiation detectors

    DOEpatents

    Parker, Sherwood

    1999-01-01

    A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals.

  1. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, James H.; Lavietes, Anthony D.

    1998-05-29

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

  2. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, J.H.; Lavietes, A.D.

    1998-05-26

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

  3. Test of radiation detectors used in homeland security applications.

    PubMed

    Pibida, L; Minniti, R; O'Brien, M; Unterweger, M

    2005-05-01

    This work was performed as part of the National Institute of Standards and Technology (NIST) program to support the development of the new American National Standards Institute (ANSI) standards N42.32-2003 and N42.33-2003 for hand-held detectors, and personal electronic dosimeters, as well as to support the Office of Law Enforcement Standards (OLES) and the Department of Homeland Security (DHS) in testing these types of detectors for their use by first responders. These instruments are required to operate over a photon energy range of 60 keV to 1.33 MeV and over a wide range of air-kerma rates. The performance and response of various radiation detectors, purchased by the NIST, was recorded when placed in 60Co, 137Cs, and x-ray beams at different air-kerma rates. The measurements described in this report were performed at the NIST x-ray and gamma-ray radiation calibration facilities. The instruments' response (exposure or dose rate readings) shows strong energy dependence but almost no dependence to different air-kerma rates. The data here reported provide a benchmark in support of current protocols that are being developed for radiation detection instrumentation used in homeland security applications. A future plan is to test these devices, plus other commercially available detectors, against ANSI standards N42.32-2003 and N42.33-2003.

  4. Methodology for Assessing Radiation Detectors Used by Emergency Responders

    SciTech Connect

    Piotr Wasiolek; April Simpson

    2008-03-01

    The threat of weapons of mass destruction terrorism resulted in the U.S. Department of Homeland Security deploying large quantities of radiation detectors throughout the emergency responder community. However, emergency responders specific needs were not always met by standard health physics instrumentation used in radiation facilities. Several American National Standards Institute standards were developed and approved to evaluate the technical capabilities of detection equipment. Establishing technical capability is a critical step, but it is equally important to emergency responders that the instruments are easy to operate and can withstand the rugged situations they encounter. The System Assessment and Validation for Emergency Responders (SAVER) Program (managed by the U.S. Department of Homeland Security, Office of Grants and Training, Systems Support Division) focuses predominantly on the usability, ergonomics, readability, and other features of the detectors, rather than performance controlled by industry standards and the manufacturers. National Security Technologies, LLC, as a SAVER Technical Agent, conducts equipment evaluations using active emergency responders who are familiar with the detection equipment and knowledgeable of situations encountered in the field, which provides more relevant data to emergency responders.

  5. A transition radiation detector for kaon/pion separation

    NASA Astrophysics Data System (ADS)

    Baake, M.; Diekmann, B.; Gebert, F.; Heinloth, K.; Holzkamp, S.; Körsgen, G.; Voigtlaender-Tetzner, A.; Bagdassarian, L.; Kazarian, C.; Oganessian, A.

    1989-09-01

    The experiment WA69 at the CERN Omega spectrometer facility has studied fixed target photon and hadron production of inclusive hadronic final states with tagged photon beams of 65-175 GeV in comparison to charged hadron beams (π and K) of 80 and 140 GeV fixed energies. For the identification of final state pions and kaons above 100 GeV/c a transition radiation detector (TRAD) has been developed. This detector was constructed of 12 modules, each consisting of a polypropylene fibre radiator and a proportional chamber with a xenon/methane gas mixture to detect the transition radiation produced by fast moving charged particles. We give a description of the detector setup and working conditions. As a first result obtained with the TRAD the ratio of photoproduced kaons and pions in the extreme forward regime ( xF > 0.7 and - t < 1 GeV 2) is measured to be 10.2(±1.7)% which is in agreement with VDM predictions.

  6. Processing and characterization of epitaxial GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Wu, X.; Peltola, T.; Arsenovich, T.; Gädda, A.; Härkönen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, H.; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.

    2015-10-01

    GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 - 130 μm thick epitaxial absorption volume. Thick undoped and heavily doped p+ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 μm / h. The GaAs p+/i/n+ detectors were characterized by Capacitance Voltage (CV), Current Voltage (IV), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage (Vfd) of the detectors with 110 μm epi-layer thickness is in the range of 8-15 V and the leakage current density is about 10 nA/cm2. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

  7. Large area radiation detectors based on II VI thin films

    NASA Astrophysics Data System (ADS)

    Quevedo-Lopez, Manuel

    2015-03-01

    The development of low temperature device technologies that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this talk, our efforts to develop novel CMOS integration schemes, circuits, memory, sensors as well as novel contacts, dielectrics and semiconductors for flexible electronics are presented. In particular, in this presentation we discuss fundamental materials properties including crystalline structure, interfacial reactions, doping, etc. defining performance and reliability of II-VI-based radiation sensors. We investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. Besides II-VI materials, we also evaluated several diode materials, Si, CdTe,GaAs, C (diamond), and ZnO, and two neutron converter materials,10B and 6LiF. We determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  8. Electrical delay line multiplexing for pulsed mode radiation detectors

    NASA Astrophysics Data System (ADS)

    Vinke, Ruud; Yeom, Jung Yeol; Levin, Craig S.

    2015-04-01

    Medical imaging systems are composed of a large number of position sensitive radiation detectors to provide high resolution imaging. For example, whole-body Positron Emission Tomography (PET) systems are typically composed of thousands of scintillation crystal elements, which are coupled to photosensors. Thus, PET systems greatly benefit from methods to reduce the number of data acquisition channels, in order to reduce the system development cost and complexity. In this paper we present an electrical delay line multiplexing scheme that can significantly reduce the number of readout channels, while preserving the signal integrity required for good time resolution performance. We experimented with two 4 × 4 LYSO crystal arrays, with crystal elements having 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm dimensions, coupled to 16 Hamamatsu MPPC S10931-050P SiPM elements. Results show that each crystal could be accurately identified, even in the presence of scintillation light sharing and inter-crystal Compton scatter among neighboring crystal elements. The multiplexing configuration degraded the coincidence timing resolution from ∼243 ps FWHM to ∼272 ps FWHM when 16 SiPM signals were combined into a single channel for the 4 × 4 LYSO crystal array with 3 mm × 3 mm × 20 mm crystal element dimensions, in coincidence with a 3 mm × 3 mm × 5 mm LYSO crystal pixel. The method is flexible to allow multiplexing configurations across different block detectors, and is scalable to an entire ring of detectors.

  9. Radiation detector device for rejecting and excluding incomplete charge collection events

    DOEpatents

    Bolotnikov, Aleksey E.; De Geronimo, Gianluigi; Vernon, Emerson; Yang, Ge; Camarda, Giuseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B.

    2016-05-10

    A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.

  10. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    SciTech Connect

    Jing, T

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N {approximately}20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  11. Status of radiation damage measurements in room temperature semiconductor radiation detectors

    SciTech Connect

    Franks, L.A.; James, R.B.

    1998-04-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed for the purpose of determining their applicability to space applications. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. CT detectors show resolution losses after fluences of 3 {times} 10{sup 9} p/cm{sup 2} at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 {times} 10{sup 10} n/cm{sup 2}. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10{sup 12} p/cm{sup 2} and with 1.5 GeV protons at fluences up to 1.2 {times} 10{sup 8} p/cm{sup 2}. Neutron exposures at 8 MeV have been reported at fluences up to 10{sup 15} n/cm{sup 2}. No radiation damage was found under these irradiation conditions.

  12. CONCORD: comparison of cosmic radiation detectors in the radiation field at aviation altitudes

    NASA Astrophysics Data System (ADS)

    Meier, Matthias M.; Trompier, François; Ambrozova, Iva; Kubancak, Jan; Matthiä, Daniel; Ploc, Ondrej; Santen, Nicole; Wirtz, Michael

    2016-05-01

    Space weather can strongly affect the complex radiation field at aviation altitudes. The assessment of the corresponding radiation exposure of aircrew and passengers has been a challenging task as well as a legal obligation in the European Union for many years. The response of several radiation measuring instruments operated by different European research groups during joint measuring flights was investigated in the framework of the CONCORD (COmparisoN of COsmic Radiation Detectors) campaign in the radiation field at aviation altitudes. This cooperation offered the opportunity to measure under the same space weather conditions and contributed to an independent quality control among the participating groups. The CONCORD flight campaign was performed with the twin-jet research aircraft Dassault Falcon 20E operated by the flight facility Oberpfaffenhofen of the German Aerospace Center (Deutsches Zentrum für Luft- und Raumfahrt, DLR). Dose rates were measured at four positions in the atmosphere in European airspace for about one hour at each position in order to obtain acceptable counting statistics. The analysis of the space weather situation during the measuring flights demonstrates that short-term solar activity did not affect the results which show a very good agreement between the readings of the instruments of the different institutes.

  13. Dynamic Electrothermal Model of a Sputtered Thermopile Thermal Radiation Detector for Earth Radiation Budget Applications

    NASA Technical Reports Server (NTRS)

    Weckmann, Stephanie

    1997-01-01

    The Clouds and the Earth's Radiant Energy System (CERES) is a program sponsored by the National Aeronautics and Space Administration (NASA) aimed at evaluating the global energy balance. Current scanning radiometers used for CERES consist of thin-film thermistor bolometers viewing the Earth through a Cassegrain telescope. The Thermal Radiation Group, a laboratory in the Department of Mechanical Engineering at Virginia Polytechnic Institute and State University, is currently studying a new sensor concept to replace the current bolometer: a thermopile thermal radiation detector. This next-generation detector would consist of a thermal sensor array made of thermocouple junction pairs, or thermopiles. The objective of the current research is to perform a thermal analysis of the thermopile. Numerical thermal models are particularly suited to solve problems for which temperature is the dominant mechanism of the operation of the device (through the thermoelectric effect), as well as for complex geometries composed of numerous different materials. Feasibility and design specifications are studied by developing a dynamic electrothermal model of the thermopile using the finite element method. A commercial finite element-modeling package, ALGOR, is used.

  14. Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector.

    PubMed

    Urdaneta, M; Stepanov, P; Weinberg, I N; Pala, I R; Brock, S

    2011-01-11

    Silicon is a convenient and inexpensive platform for radiation detection, but has low stopping power for x-rays and gamma-rays with high energy (e.g., 100 keV, as used in computed tomography and digital radiography, or 1 MeV, as desired for detection of nuclear materials). We have effectively increased the stopping power of silicon detectors by producing a layer of porous or micro-machined silicon, and infusing this layer with semiconductor quantum dots made of electron-dense materials. Results of prototype detectors show sensitivity to infrared, visible light, and x-rays, with dark current of less than 1 nA/mm(2). PMID:24432047

  15. Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

    DOEpatents

    Conway, Adam; Beck, Patrick R; Graff, Robert T; Nelson, Art; Nikolic, Rebecca J; Payne, Stephen A; Voss, Lars; Kim, Hadong

    2015-04-07

    A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

  16. Using Ionizing Radiation Detectors. Module 11. Vocational Education Training in Environmental Health Sciences.

    ERIC Educational Resources Information Center

    Consumer Dynamics Inc., Rockville, MD.

    This module, one of 25 on vocational education training for careers in environmental health occupations, contains self-instructional materials on using ionizing radiation detectors. Following guidelines for students and instructors and an introduction that explains what the student will learn are three lessons: (1) naming and telling the function…

  17. Fundamental properties of semiconductor materials, and material performance in detectors

    NASA Technical Reports Server (NTRS)

    Casper, K. J.

    1973-01-01

    Procedures for determining fundamental properties of semiconductor materials, their performance as radiation detectors, and their service life as such detectors are given. Relationships were established between the minority carrier lifetime in the bulk of the material and the charge collection efficiency of the detector.

  18. Structural and Electronic Properties of Gold Contacts on CdZnTe with Different Surface Finishes for Radiation Detector Applications

    NASA Astrophysics Data System (ADS)

    Tari, S.; Aqariden, F.; Chang, Y.; Ciani, A.; Grein, C.; Li, Jin; Kioussis, N.

    2014-08-01

    State-of-the-art room-temperature, high-resolution x-ray and gamma-ray semiconductor detectors can be fabricated from CdZnTe (CZT) crystals. The structural and electronic properties of the CZT surface, especially the contact interfaces, can have a substantial effect on radiation detector performance, for example leakage current, signal-to-noise ratio, and energy resolution, especially for soft x-rays and large pixilated arrays. Atomically smooth and defect-free surfaces are desirable for high-performance CZT-based detectors; chemo-mechanical polishing (CMP) is typically performed to produce such surfaces. The electrical behavior of the metal/CZT interface varies substantially with surface preparation before contact deposition, and with choice of metal and deposition technique. We report a systematic study of the structural and electronic properties of gold (Au) contacts on CZT prepared with different surface finishes. We observed subsurface damage under Au contacts on CMP-finished CZT and abrupt interfaces for Au on chemically-polished (CP) CZT. Schottky barrier formation was observed for Au contacts, irrespective of surface finish, and less charge trapping and low surface resistance were observed for CP-finished surfaces. Pre-deposition surface treatment produced interfaces free from oxide layers.

  19. Performance characteristics of a silicon photomultiplier based compact radiation detector for Homeland Security applications

    NASA Astrophysics Data System (ADS)

    Park, Hye Min; Joo, Koan Sik

    2015-05-01

    A next-generation compact radiation detector was studied for more accurate measurement of radiation and for improvement of detector reliability for the purpose of developing radiation protection technology and military applications. The previously used radiation detector had some limitations due to its bulky size, limited range and its environment for radiation measurement. On the other hand, the compact radiation detector examined in this study utilizes a silicon photomultiplier which appears to be more suitable for this application because of its physical superiority characterized by its small size, high sensitivity, and durability. Accordingly, a SiPM based scintillation detector has been developed as part of this basic study of military radiation detectors. The detector has been tested for its ability to obtain the operating characteristics of a sensor and analyzed with variations of parameter values and for efficiency of detection in accordance with its ability to measure radiation in the environment. Two SiPM based Scintillation detectors with LYSO, BGO and CsI:Tl scintillators were developed and the detectors were analyzed by a number of operating characteristics such as reverse bias, operating temperature and high magnetic field, that depend on environmental changes in radiation measurement. The Photon count rate and spectra were compared for these three scintillators. We found that there were variations in the radiation detection which were characterized by reverse bias, temperature and high magnetic field. It was also found that there was an 11.9% energy resolution for the LYSO, 15.5% for BGO and 13.5% for CsI:Tl using Array SiPM, and 18% for CsI:Tl energy resolution using single SiPM when we measured energy resolution of 511 keV for 22Na. These results demonstrate the potential widespread use of SiPM based compact radiation detectors for Homeland Security applications.

  20. EFFECT OF SURFACE PREPARATION TECHNIQUE ON THE RADIATION DETECTOR PERFORMANCEOF CDZNTE

    SciTech Connect

    Duff, M

    2007-05-23

    Synthetic CdZnTe (CZT) semiconducting crystals are highly suitable for the room temperature-based detection of gamma radiation. The surface preparation of Au contacts on surfaces of CZT detectors is typically conducted after (1) polishing to remove artifacts from crystal sectioning and (2) chemical etching, which removes residual mechanical surface damage however etching results in a Te rich surface layer that is prone to oxidize. Our studies show that CZT surfaces that are only polished (as opposed to polished and etched) can be contacted with Au and will yield lower surface currents. Due to their decreased dark currents, these as-polished surfaces can be used in the fabrication of gamma detectors exhibiting a higher performance than polished and etched surfaces with relatively less peak tailing and greater energy resolution. CdZnTe or ''CZT'' crystals are attractive to use in homeland security applications because they detect radiation at room temperature and do not require low temperature cooling as with silicon- and germanium-based detectors. Relative to germanium and silicon detectors, CZT is composed of higher Z elements and has a higher density, which gives it greater ''stopping power'' for gamma rays making a more efficient detector. Single crystal CZT materials with high bulk resistivity ({rho}>10{sup 10} {Omega} x cm) and good mobility-lifetime products are also required for gamma-ray spectrometric applications. However, several factors affect the detector performance of CZT are inherent to the as grown crystal material such as the presence of secondary phases, point defects and the presence of impurities (as described in a literature review by R. James and researchers). These and other factors can limit radiation detector performance such as low resistivity, which causes a large electronic noise and the presence of traps and other heterogeneities, which result in peak tailing and poor energy resolution.

  1. Advanced Semiconductor Dosimetry in Radiation Therapy

    SciTech Connect

    Rosenfeld, Anatoly B.

    2011-05-05

    Modern radiation therapy is very conformal, resulting in a complexity of delivery that leads to many small radiation fields with steep dose gradients, increasing error probability. Quality assurance in delivery of such radiation fields is paramount and requires real time and high spatial resolution dosimetry. Semiconductor radiation detectors due to their small size, ability to operate in passive and active modes and easy real time multichannel readout satisfy many aspects of in vivo and in a phantom quality assurance in modern radiation therapy. Update on the recent developments and improvements in semiconductor radiation detectors and their application for quality assurance in radiation therapy, based mostly on the developments at the Centre for Medical Radiation Physics (CMRP), University of Wollongong, is presented.

  2. Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.

    1997-01-01

    Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

  3. Rare Earth Doped Semiconductors and Materials Research Society Symposium Proceedings, Volume 301

    NASA Astrophysics Data System (ADS)

    Ballance, John

    1994-02-01

    The properties of rare earth ions in solids were studied in detail for decades, but until recently this work was restricted to dominantly ionic hosts such as fluorides and oxides, and to a lesser extent to more covalently bonded hosts, such as tetrahedral 2-6 semiconductors. The idea of rare earth elements incorporated into covalent semiconductors such as GaAs and Si may be traced to a short communication in 1963 by R.L. Bell (J. Appl. Phys. 34, 1563 (1963)) proposing a dc-pumped rare earth laser. At about the same time, three unpublished technical reports appeared as a result of U.S. Department of Defense sponsored research in rare earth doped Si, GaAs, and InP to fabricate LED's. Attempts by other researchers to identify sharp 4f specific emissions in these hosts essentially failed.

  4. Materials Research Society Symposium Proceedings. Volume 339: Diamond, SiC and nitride wide bandgap semiconductors

    NASA Astrophysics Data System (ADS)

    Carter, Calvin H.; Gildenblat, Gennady; Nakamura, Shuji; Nemanich, Robert J.

    1994-04-01

    This symposium was directed toward the potential of using diamond, SiC, and nitride wide bandgap semiconductors. The symposium emphasized materials issues related to the semiconducting properties of these wide bandgap materials. Both experimental and theoretical studies were presented. Solid advances were reported in the growth techniques of all three materials groups. Contributions demonstrated the critical importance of surfaces, interfaces, doping, defects, and impurities Reports demonstrated potential device applications ranging from unique electronic devices to blue/UV light emitters/detectors and even novel structures employing a negative electron affinity. The overall theme of the symposium was that materials research into wide bandgap semiconductors will make available exciting new applications, and that we are just beginning to understand the potential of these materials.

  5. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  6. A transition radiation detector prototype to measure the energy of muons in cosmic ray laboratories

    NASA Astrophysics Data System (ADS)

    Bellotti, R.; Cafagna, F.; Calicchio, M.; Castellano, M.; De Cataldo, G.; De Marzo, C.; Enriquez, O.; Favuzzi, C.; Fusco, P.; Giglietto, N.; Mongelli, M.; Nappi, E.; Perchiazzi, M.; Sacchetti, A.; Spinelli, P.

    1991-07-01

    We have developed and tested a transition radiation detector prototype suitable to measure the energy of muons in cosmic ray laboratories. The technical solutions adopted, based on extruded tubes as detectors and foam or fiber mats as radiators, allow to cover very large areas with a low number of channels and ensure stability of operation. Using an argon-carbon dioxide gas mixture it is possible to explore the muon energy range up to 1 TeV.

  7. Examination results of the Three Mile Island radiation detector HP-R-212

    SciTech Connect

    Mueller, G M

    1984-01-01

    Area radiation detector HP-R-212 was removed from the Three Mile Island containment building on November 13, 1981. The detector apparently started to fail during November 1979 and by the first part of December 1979 the detector readings had degraded from 1 R/h to 20 mR/h. This report discusses the cause of ailure, detector radiation measurement characteristics, and our estimates of the total gamma radiation dose received by the detector electronics.

  8. Examination results of the Three Mile Island radiation detector HP-R-212

    SciTech Connect

    Mueller, G.M.

    1983-12-01

    Area radiation detector HP-R-212 was removed from the Three Mile Island containment building on November 13, 1981. The detector apparently started to fail during November 1979 and by the first part of December 1979 the detector readings had degraded from 1 R/hr to 20 mR/hr. This report discusses the cause of failure, detector radiation measurement characteristics, and our estimates of the total gamma radiation dose received by the detector electronics.

  9. Performance of bulk SiC radiation detectors

    NASA Astrophysics Data System (ADS)

    Cunningham, W.; Gouldwell, A.; Lamb, G.; Scott, J.; Mathieson, K.; Roy, P.; Bates, R.; Thornton, P.; Smith, K. M.; Cusco, R.; Glaser, M.; Rahman, M.

    2002-07-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I- V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for α radiation. By measuring the charge collection efficiency (CCE) for variations in bias voltage, CCE values up to 100% have been measured.

  10. Radiation detector

    DOEpatents

    Fultz, B.T.

    1980-12-05

    Apparatus is provided for detecting radiation such as gamma rays and x-rays generated in backscatter Moessbauer effect spectroscopy and x-ray spectrometry, which has a large window for detecting radiation emanating over a wide solid angle from a specimen and which generates substantially the same output pulse height for monoenergetic radiation that passes through any portion of the detection chamber. The apparatus includes a substantially toroidal chamber with conductive walls forming a cathode, and a wire anode extending in a circle within the chamber with the anode lying closer to the inner side of the toroid which has the least diameter than to the outer side. The placement of the anode produces an electric field, in a region close to the anode, which has substantially the same gradient in all directions extending radially from the anode, so that the number of avalanche electrons generated by ionizing radiation is independent of the path of the radiation through the chamber.

  11. Radiation detector

    DOEpatents

    Fultz, Brent T.

    1983-01-01

    Apparatus is provided for detecting radiation such as gamma rays and X-rays generated in backscatter Mossbauer effect spectroscopy and X-ray spectrometry, which has a large "window" for detecting radiation emanating over a wide solid angle from a specimen and which generates substantially the same output pulse height for monoenergetic radiation that passes through any portion of the detection chamber. The apparatus includes a substantially toroidal chamber with conductive walls forming a cathode, and a wire anode extending in a circle within the chamber with the anode lying closer to the inner side of the toroid which has the least diameter than to the outer side. The placement of the anode produces an electric field, in a region close to the anode, which has substantially the same gradient in all directions extending radially from the anode, so that the number of avalanche electrons generated by ionizing radiation is independent of the path of the radiation through the chamber.

  12. Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector.

    PubMed

    Nelson, Kyle A; Geuther, Jeffrey A; Neihart, James L; Riedel, Todd A; Rojeski, Ronald A; Saddler, Jeffrey L; Schmidt, Aaron J; McGregor, Douglas S

    2012-07-01

    A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted light was focused onto an IR sensitive photodiode. Calibrations of reactor pulses were performed using the CdZnTe Pockels cell by measuring the change in the photodiode current, repeated 10 times for each set of reactor pulses, set between 1.00 and 2.50 dollars in 0.50 increments of reactivity.

  13. X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors

    DOE PAGESBeta

    Nelson, A. J.; Voss, L. F.; Beck, P. R.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Lee, J. -S.; Kim, H.; Cirignano, L.; et al

    2013-01-12

    We subjected device-grade TlBr to various chemical treatments used in room temperature radiation detector fabrication to determine the resulting surface composition and electronic structure. As-polished TlBr was treated separately with HCl, SOCl2, Br:MeOH and HF solutions. High-resolution photoemission measurements on the valence band electronic structure and Tl 4f, Br 3d, Cl 2p and S 2p core lines were used to evaluate surface chemistry and shallow heterojunction formation. Surface chemistry and valence band electronic structure were correlated with the goal of optimizing the long-term stability and radiation response.

  14. Radiation detector using a bulk high T[sub c] superconductor

    DOEpatents

    Artuso, J.F.; Franks, L.A.; Hull, K.L.; Symko, O.G.

    1993-12-07

    A radiation detector is provided, wherein a bulk high T[sub c] superconducting sample is placed in a magnetic field and maintained at a superconducting temperature. Photons of incident radiation will cause localized heating in superconducting loops of the sample destroying trapped flux and redistributing the fluxons, and reducing the critical current of the loops. Subsequent cooling of the sample in the magnetic field will cause trapped flux redistributed Abrikosov fluxons and trapped Josephson fluxons. The destruction and trapping of the fluxons causes changes in the magnetization of the sample inducing currents in opposite directions in a pickup coil which is coupled by an input coil to an rf SQUID. 4 figures.

  15. GEMGrid: a wafer post-processed GEM-like radiation detector

    NASA Astrophysics Data System (ADS)

    Blanco Carballo, V. M.; Bilevych, Y.; Chefdeville, M.; Fransen, M.; van der Graaf, H.; Salm, C.; Schmitz, J.; Timmermans, J.

    2009-09-01

    This paper presents a new wafer post-processed micropatterned gaseous radiation detector called GEMGrid. The device consists of a GEM-like structure fabricated with SU-8 photoresist directly on top of a Timepix chip with zero gap distance. The detector characteristics have been studied in several gas mixtures. The device is capable of tracking minimum ionizing particles and exhibits good energy resolution on 55Fe decays. We further show a strongly improved mechanical robustness of these GEM-like structures as compared to a pillar-supported integrated Micromegas.

  16. High throughput combinatorial screening of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Mao, Samuel S.

    2011-11-01

    This article provides an overview of an advanced combinatorial material discovery platform developed recently for screening semiconductor materials with properties that may have applications ranging from radiation detectors to solar cells. Semiconductor thin-film libraries, each consisting of 256 materials of different composition arranged into a 16×16 matrix, were fabricated using laser-assisted evaporation process along with a combinatorial mechanism to achieve variations. The composition and microstructure of individual materials on each thin-film library were characterized with an integrated scanning micro-beam x-ray fluorescence and diffraction system, while the band gaps were determined by scanning optical reflection and transmission of the libraries. An ultrafast ultraviolet photon-induced charge probe was devised to measure the mobility and lifetime of individual thin-film materials on semiconductor libraries. Selected results on the discovery of semiconductors with desired band gaps and transport properties are illustrated.

  17. Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.; Chen, Liang-Yu

    2007-01-01

    Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

  18. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOEpatents

    Majewski, Stanislaw; Kross, Brian J.; Zorn, Carl J.; Majewski, Lukasz A.

    1996-01-01

    An optimized examination system and method based on the Reverse Geometry X-Ray.RTM. (RGX.RTM.) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging.

  19. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOEpatents

    Majewski, S.; Kross, B.J.; Zorn, C.J.; Majewski, L.A.

    1996-10-22

    An optimized examination system and method based on the Reverse Geometry X-Ray{trademark} (RGX{trademark}) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging. 5 figs.

  20. Development of a fast radiation detector based on barium fluoride scintillation crystal

    SciTech Connect

    Han, Hetong; Zhang, Zichuan; Weng, Xiufeng; Liu, Junhong; Zhang, Kan; Li, Gang; Guan, Xingyin

    2013-07-15

    Barium fluoride (BaF{sub 2}) is an inorganic scintillation material used for the detection of X/gamma radiation due to its relatively high density, equivalent atomic number, radiation hardness, and high luminescence. BaF{sub 2} has a potential capacity to be used in gamma ray timing experiments due to the prompt decay emission components. It is known that the light output from BaF{sub 2} has three decay components: two prompt of those at approximately 195 nm and 220 nm with a decay constant around 600-800 ps and a more intense, slow component at approximately 310 nm with a decay constant around 630 ns which hinders fast timing experiments. We report here the development of a fast radiation detector based on a BaF{sub 2} scintillation crystal employing a special optical filter device, a multiple reflection multi-path ultraviolet region short-wavelength pass light guides (MRMP-short pass filter) by using selective reflection technique, for which the intensity of the slow component is reduced to less than 1%. The methods used for this study provide a novel way to design radiation detector by utilizing scintillation crystal with several emission bands.

  1. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  2. Growth and fabrication method of CdTe and its performance as a radiation detector

    NASA Astrophysics Data System (ADS)

    Choi, Hyojeong; Jeong, Manhee; Kim, Han Soo; Kim, Young Soo; Ha, Jang Ho; Chai, Jong-Seo

    2015-01-01

    A CdTe crystal ingot doped with 2000 ppm of Cl was grown by using the low-pressure Bridgman (LPB) method at the Korea Atomic Energy Research Institute (KAERI). A Semiconductor detector as a radiation detection sensor with a size of 7 (W) × 6.5 (D) × 2 (H) mm3 was fabricated from the CdTe ingot. In addition, the properties of the CdTe sample were observed through four kinds of experiments to analyze its performance. The resistivity was obtained as 1.41 × 1010 Ωcm by using a Keithley 6517A high-precision electrometer. The mobility-lifetime products for electrons and holes were 3.137 × 10-4 cm2/V and 4.868 × 10-5 cm2/V, respectively. Finally, we achieved a 16.8% energy resolution at 59.5 keV for the 241Am gamma-ray source. The CdTe semiconductor detector grown at KAERI has a performance good enough to detect low-energy gamma-rays.

  3. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect

    GLASER, EVAN

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  4. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin; Ciampi, Guido

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  5. Design and construction of a large cylindrical transition radiation detector for the VENUS experiment

    NASA Astrophysics Data System (ADS)

    Sakuda, M.; Fukushima, Y.; Hayashi, K.; Kohriki, T.; Nakamura, S.; Ogawa, K.; Watase, Y.; Haba, J.; Kanda, N.; Suzuki, A.; Suzuki, Y.; Tsukamoto, A.; Yamamoto, H.; Chiba, Y.; Ohsugi, T.; Taketani, A.; Terunuma, N.; Nakano, I.

    1992-01-01

    We describe the design considerations and construction techniques of a large cylindrical transition radiation detector (TRD), 296 cm long and 311.4 cm in diameter, for the VENUS experiment at the e+e+ storage ring, TRISTAN. The design is based on measurements by using test chambers with e/π beams and X-ray sources. The test results will be fully described. The TRD contains four modules of radiators, each followed by an X-ray chamber with 8192 (2688) total (sense) wires. The gain calibration of all sense wires has been completed with an accuracy of 5%. The TRD is expected to provide a pion rejection ratio of 15+/-3 with an electron efficiency of 90% for isolated tracks with momenta above 1 GeV/c.

  6. Radiation detector using a bulk high T.sub.c superconductor

    DOEpatents

    Artuso, Joseph F.; Franks, Larry A.; Hull, Kenneth L.; Symko, Orest G.

    1993-01-01

    A radiation detector (10) is provided, wherein a bulk high T.sub.c superconducting sample (11) is placed in a magnetic field and maintained at a superconducting temperature. Photons of incident radiation will cause localized heating in superconducting loops of the sample destroying trapped flux and redistributing the fluxons, and reducing the critical current of the loops. Subsequent cooling of the sample in the magnetic field will cause trapped flux redistributed Abrikosov fluxons and trapped Josephson fluxons. The destruction and trapping of the fluxons causes changes in the magnetization of the sample inducing currents in opposite directions in a pickup coil (12) which is coupled by an input coil (15) to an rf SQUID (16).

  7. Measurement of a high electrical quality factor in a niobium resonator for a gravitational radiation detector

    NASA Technical Reports Server (NTRS)

    Folkner, W. M.; Moody, M. V.; Richard, J.-P.

    1989-01-01

    The mechanical and electrical quality factors of a 10-g niobium resonator were measured at 4.4 K and were found to be 8.1 x 10 to the 6th, and 3.8 x 10 to the 6th, respectively. The value for the electrical quality factor is high enough for a system operating at 50 mK at a sensitivity level of one phonon. The resonator's low damping properties make it suitable for use as a transducer for a cryogenic three-mode gravitational radiation detector. A practical design is given for the mounting of the resonator on a 2400-kg aluminum-bar detector. Projections are made for the sensitivity of a 2400-kg bar instrumented as a three-mode system with this resonator inductively coupled to a SQUID.

  8. A transition radiation detector for RHIC featuring accurate tracking and dE/dx particle identification

    SciTech Connect

    O`Brien, E.; Lissauer, D.; McCorkle, S.; Polychronakos, V.; Takai, H.; Chi, C.Y.; Nagamiya, S.; Sippach, W.; Toy, M.; Wang, D.; Wang, Y.F.; Wiggins, C.; Willis, W.; Cherniatin, V.; Dolgoshein, B.; Bennett, M.; Chikanian, A.; Kumar, S.; Mitchell, J.T.; Pope, K.

    1991-12-31

    We describe the results of a test ran involving a Transition Radiation Detector that can both distinguish electrons from pions which momenta greater titan 0.7 GeV/c and simultaneously track particles passing through the detector. The particle identification is accomplished through a combination of the detection of Transition Radiation from the electron and the differences in electron and pion energy loss (dE/dx) in the detector. The dE/dx particle separation is most, efficient below 2 GeV/c while particle ID utilizing Transition Radiation effective above 1.5 GeV/c. Combined, the electron-pion separation is-better than 5 {times} 10{sup 2}. The single-wire, track-position resolution for the TRD is {approximately}230 {mu}m.

  9. Anomalous effects on radiation detectors and capacitance measurements inside a modified Faraday cage

    NASA Astrophysics Data System (ADS)

    Milián-Sánchez, V.; Mocholí-Salcedo, A.; Milián, C.; Kolombet, V. A.; Verdú, G.

    2016-08-01

    We present experimental results showing certain anomalies in the measurements performed inside a modified Faraday cage of decay rates of Ra-226, Tl-204 and Sr-90/I-90, of the gamma spectrum of a Cs-137 preparation, and of the capacitance of both a class-I multilayer ceramic capacitor and of the interconnection cable between the radiation detector and the scaler. Decay rates fluctuate significantly up to 5% around the initial value and differently depending on the type of nuclide, and the spectrum photopeak increases in 4.4%. In the case of the capacitor, direct capacitance measurements at 100 Hz, 10 kHz and 100 kHz show variations up to 0.7%, the most significant taking place at 100 Hz. In the case of the interconnection cable, the capacitance varies up to 1%. Dispersion also tends to increase inside the enclosure. However, the measured capacitance variations do not explain the variations observed in decay rates.

  10. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    SciTech Connect

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.; Xerox Palo Alto Research Center, CA )

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs.

  11. Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

    SciTech Connect

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.H.; Gul, R.; and James, R.B.

    2010-10-26

    The behavior of the internal electric-field of nuclear-radiation detectors substantially affects the detector's performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) detectors under high carrier injection. We noted the build-up of a space charge region near the cathode that produces a built-in field opposing the applied field. Its presence entails the collapse of the electric field in the rest of detector, other than the portion near the cathode. Such a space-charge region originates from serious hole-trapping in CZT. The device's operating temperature greatly affects the width of the space-charge region. With increasing temperature from 5 C to 35 C, its width expanded from about 1/6 to 1/2 of the total depth of the detector.

  12. Prototype Radiation Detector Positioning System For The Automated Nondestructive Assay Of Uf6 Cylinders

    SciTech Connect

    Hatchell, Brian K.; Valdez, Patrick LJ; Orton, Christopher R.; Mace, Emily K.

    2011-08-07

    International Atomic Energy Agency (IAEA) inspectors currently perform periodic inspections at uranium enrichment plants to verify UF6 cylinder enrichment declarations. Measurements are typically performed with handheld high-resolution sensors on a sampling of cylinders taken to be representative of the facility’s entire cylinder inventory. These measurements are time-consuming, expensive, and assay only a small fraction of the total cylinder volume. An automated nondestructive assay system capable of providing enrichment measurements over the full volume of the cylinder could improve upon current verification practices in terms of efficiency and assay accuracy. This paper describes an approach denoted the Integrated Cylinder Verification Station (ICVS) that supports 100% cylinder verification, provides volume-averaged cylinder enrichment assay, and reduces inspector manpower needs. To allow field measurements to be collected to validate data collection algorithms, a prototype radiation detector positioning system was constructed. The system was designed to accurately position an array of radiation detectors along the length of a cylinder to measure UF6 enrichment. A number of alternative radiation shields for the detectors were included with the system. A collimated gamma-ray spectrometer module that allows translation of the detectors in the surrounding shielding to adjust the field of view, and a collimating plug in the end to further reduce the low-energy field of view, were also developed. Proof-of-principle measurements of neutron and high-energy gamma-ray signatures, using moderated neutron detectors and large-volume spectrometers in a fixed-geometry, portal-like configuration, supported an early assessment of the viability of the concept. The system has been used successfully on two testing campaigns at an AREVA fuel fabrication plant to scan over 30 product cylinders. This paper will describe the overall design of the detector positioning system and

  13. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  14. Properties of thin film radiation detectors and their application to dosimetry and quality assurance in x-ray imaging

    NASA Astrophysics Data System (ADS)

    Elshahat, Bassem

    The characteristics of two different types of thin-film radiation detectors are experimentally investigated: organic photovoltaic cells (OPV) and a new self-powered detector that operates based on high-energy secondary electrons (HEC). Although their working principles are substantially different, they both can be used for radiation detection and image formation in medical applications. OPVs with different active layer material thicknesses and aluminum electrode areas were fabricated. The OPV cell consisted of P3HT: PCBM photoactive materials, composed of donor and acceptor semiconducting organic materials, sandwiched between an aluminum electrode as anode and an indium tin oxide (ITO) electrode as a cathode. The detectors were exposed to 60150 kVp x rays, which generated photocurrent in the active layer. The electric charge production in the OPV cells was measured. The net current as function of beam energy (kVp) was proportional to ~1/kVp0.45 when adjusted for x-ray beam output. The best combination of parameters for these cells was 270-nm active layer thicknesses for 0.7cm-2 electrode area. The measured current ranged from about 0.7 to 2.4 nA/cm2 for 60-150 kVp, corresponding to about 0.09 -- 0.06 nA/cm2/mGy, respectively, when adjusted for the output x-ray source flux. The HEC detection concept was recently proposed and experimentally demonstrated by a UML/HMS research group. HEC detection employs direct conversion of high-energy electron current to detector signal without external power and amplification. The potential of using HEC detectors for diagnostic imaging application was investigated by using a heterogeneous phantom consisting of a water cylinder with Al and wax rod inserts.

  15. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  16. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    SciTech Connect

    Cho, Gyuseong

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  17. Technical Note: Response measurement for select radiation detectors in magnetic fields

    SciTech Connect

    Reynolds, M.; Fallone, B. G.; Rathee, S.

    2015-06-15

    Purpose: Dose response to applied magnetic fields for ion chambers and solid state detectors has been investigated previously for the anticipated use in linear accelerator–magnetic resonance devices. In this investigation, the authors present the measured response of selected radiation detectors when the magnetic field is applied in the same direction as the radiation beam, i.e., a longitudinal magnetic field, to verify previous simulation only data. Methods: The dose response of a PR06C ion chamber, PTW60003 diamond detector, and IBA PFD diode detector is measured in a longitudinal magnetic field. The detectors are irradiated with buildup caps and their long axes either parallel or perpendicular to the incident photon beam. In each case, the magnetic field dose response is reported as the ratio of detector signals with to that without an applied longitudinal magnetic field. The magnetic field dose response for each unique orientation as a function of magnetic field strength was then compared to the previous simulation only studies. Results: The measured dose response of each detector in longitudinal magnetic fields shows no discernable response up to near 0.21 T. This result was expected and matches the previously published simulation only results, showing no appreciable dose response with magnetic field. Conclusions: Low field longitudinal magnetic fields have been shown to have little or no effect on the dose response of the detectors investigated and further lend credibility to previous simulation only studies.

  18. SoftWare for Optimization of Radiation Detectors, SWORD Version 5.0.

    SciTech Connect

    STRICKMAN, MARK S.

    2013-10-23

    Version 05 SoftWare for Optimization of Radiation Detectors (SWORD) is a framework to allow easy simulation and evaluation of radiation detection systems. It is targeted at system designers, who want to evaluate and optimize system parameters without actually building hardware first, at sponsors who need to evaluate proposed or actual system designs independent of the supplier, without having access to actual hardware, and at operators who want to use simulation to evaluate observed phenomena. SWORD is vertically integrated and modular. It allows users to define their own radiation detection instruments by building them from basic geometric “objects” and assigning those objects materials, detection, and/or radioactive emission properties. This process is accomplished by a CAD-like graphical user interface, in which objects may be defined, translated, rotated, grouped, arrayed, and/or nested to produce compound objects. In addition to providing the ability to build a detection system model from scratch, SWORD provides a library of “standard” detector design objects that can be used “as is” or modified by the user.

  19. Preliminary Results from an Investigation into Nanostructured Nuclear Radiation Detectors for Non-Proliferation Applications

    SciTech Connect

    ,

    2012-10-01

    In recent years, the concept of embedding composite scintillators consisting of nanosized inorganic crystals in an organic matrix has been actively pursued. Nanocomposite detectors have the potential to meet many of the homeland security, non-proliferation, and border and cargo-screening needs of the nation and, by virtue of their superior nuclear identification capability over plastic, at roughly the same cost as plastic, have the potential to replace all plastic detectors. Nanocomposites clearly have the potential of being a gamma ray detection material that would be sensitive yet less expensive and easier to produce on a large scale than growing large, whole crystals of similar sensitivity. These detectors would have a broad energy range and a sufficient energy resolution to perform isotopic identification. The material can also be fabricated on an industrial scale, further reducing cost. This investigation focused on designing and fabricating prototype core/shell and quantum dot (QD) detectors. Fourteen core/shell and four QD detectors, all with the basic consistency of a mixture of nanoparticles in a polymer matrix with different densities of nanoparticles, were prepared. Nanoparticles with sizes <10 nm were fabricated, embedded in a polystyrene matrix, and the resultant scintillators’ radiation detector properties were characterized. This work also attempted to extend the gamma energy response on both low- and high-energy regimes by demonstrating the ability to detect low-energy and high-energy gamma rays. Preliminary results of this investigation are consistent with a significant response of these materials to nuclear radiation.

  20. Control of electric field in CdZnTe radiation detectors by above-bandgap light

    SciTech Connect

    Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P.; Touš, J.; Sellin, P. J.

    2015-04-28

    We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states.

  1. Fluctuations in induced charge introduced by Te inclusions within CdZnTe radiation detectors

    SciTech Connect

    Bale, Derek S.

    2010-07-15

    Recently, homogenization theory based on a multiple-scale perturbation of the electron transport equation has been used to derive a mathematical framework for modeling the excess charge lost to Te inclusions within radiation detectors based on semi-insulating cadmium zinc telluride (CdZnTe). In that theory, the heterogeneous material is mathematically replaced by a homogenized CdZnTe crystal whose effective electron attenuation length incorporates the additional uniform electron trapping caused by the inclusions. In this paper, the homogenization theory is extended to incorporate fluctuations in the induced charge (i.e., charge collection nonuniformities) introduced by the random position and size distributions of a noncorrelated population of small (i.e, <20 {mu}m) Te inclusions. Analysis of the effective parameters derived within the homogenized framework is used to develop a probability distribution of effective electron attenuation lengths, and therefore effective mobility-lifetime products, as a function of both the position and size distribution of Te inclusions. Example distributions are detailed for the case of an exponential size distribution at various number densities. Further, it is demonstrated that the inclusion-induced material nonuniformities derived in this paper can be numerically sampled efficiently, making them applicable to Monte Carlo device simulation of realistic CdZnTe detectors. Simulated charge induction maps and pulse-height spectra are presented and compared to recently published measurements.

  2. SoftWare for Optimization of Radiation Detectors, SWORD Version 5.0.

    2013-10-23

    Version 05 SoftWare for Optimization of Radiation Detectors (SWORD) is a framework to allow easy simulation and evaluation of radiation detection systems. It is targeted at system designers, who want to evaluate and optimize system parameters without actually building hardware first, at sponsors who need to evaluate proposed or actual system designs independent of the supplier, without having access to actual hardware, and at operators who want to use simulation to evaluate observed phenomena. SWORDmore » is vertically integrated and modular. It allows users to define their own radiation detection instruments by building them from basic geometric “objects” and assigning those objects materials, detection, and/or radioactive emission properties. This process is accomplished by a CAD-like graphical user interface, in which objects may be defined, translated, rotated, grouped, arrayed, and/or nested to produce compound objects. In addition to providing the ability to build a detection system model from scratch, SWORD provides a library of “standard” detector design objects that can be used “as is” or modified by the user.« less

  3. Data-driven exploration of the ionization-phonon partitioning in scintillating radiation detector materials

    SciTech Connect

    Ferris, Kim F.; Webb-Robertson, Bobbie-Jo M.; Jordan, David V.; Jones, Dumont M.

    2008-06-01

    An information-based approach to scintillating materials development has been applied to ranking the alkali halide and alkali earth halide series in terms of their energy conversion efficiency. The efficiency of scintillating radiation detection materials can be viewed as the product of a consecutive series of electronic processes (energy conversion, transfer, and luminescence) as outlined by Lempicki and others. Relevant data are relatively sparse, but sufficient for the development of forward mapping of materials properties through materials signatures. These mappings have been used to explore the limits of the K ratio in the Lempicki model with chemical composition, and examine its relationship with another common design objective, density. The alkali halides and alkali earth halide compounds separate themselves into distinct behavior classes favoring heavier cations and anions for improved K ratio. While the coupling of ionization is strongly related to the optical phonon modes, both dielectric and band gap contributions cannot be ignored. When applied within a candidate screen, the resulting model for K imposes design rules—simple structural restrictions—on scintillating radiation detector materials.

  4. Performance of the Time Expansion Chamber / Transition Radiation Detector in PHENIX Experiment at RHIC

    NASA Astrophysics Data System (ADS)

    Luiz Silva, Cesar

    2004-10-01

    The Time Expansion Chamber / Transition Radiation Detector (TEC/TRD) in the PHENIX Experiment at RHIC measures ionization losses (dE/dX) and transition radiation from charged particles produced by beam collisions. It is designed to perform tracking and identification for charged particles on very high particle multiplicity environment. The TEC/TRD consists of 24 wire chambers readout on both sides filled with recycled Xe-based gas mixture. This wire chamber configuration, besides providing measurements of ionization losses for charged particles, can absorb X-Ray photons generated by transition radiation from incident particles with γ>1000 crossing fiber radiators placed at the entrance of the chambers. This allows TEC/TRD to distinguish electrons from the huge pion signal produced over a broad momentum range (1GeV/c

  5. Precise dose evaluation using a commercial phototransistor as a radiation detector.

    PubMed

    Santos, L A P; Barros, F R; Filho, J A; da Silva, E F

    2006-01-01

    An experimental arrangement and a circuitry based on an NPN phototransistor-type silicon radiation detector have been used for evaluating the X-ray beam dose in the diagnostic range. The circuitry was built to allow alteration of the electric field in the phototransistor internal structure, with some devices that have an available base connection. By changing the transistor base bias it is possible to alter its operation point to obtain a response gain from the selected photon energy range. In this way we have made an electronic energy-domain discretisation and we are investigating a model to calculate the dose contribution from each energy discretised into 10 keV steps. The method has been tested in filtered radiation beams generated from an HF-160 Pantak X-ray unit and compared with the usual dosimetry method. Our results have demonstrated that it is possible to make such a dose deconvolution from 40 to 140 keV energies by controlling the phototransistor base bias properly. PMID:16702243

  6. Transition radiation detectors for electron identification beyond 1 GeV/ c

    NASA Astrophysics Data System (ADS)

    Appuhn, R. D.; Heinloth, K.; Lange, E.; Oedingen, R.; Schlösser, A.

    1988-01-01

    Transition radiation detectors (TRDs) have been tested for the separation of electrons from pions in the momentum range between 1 and 6 GeV/ c. Foams as well as fibres and foils served as radiator materials while two types of chambers, a longitudinal drift chamber (DC) and a multiwire proportional chamber (MWPC), both of 16 mm depth and dominantly filled with xenon, were used for detecting the transition radiation photons with a setup of four chambers. Analyzing the data we compared the methods of mean, truncated mean and of maximum likelihood of the total charge measurements and several methods of cluster analysis. As a result of the total charge measurements performed at test beams at CERN and DESY we obtained about 1% pion contamination at 90% electron efficiency for the polypropylene materials in the configuration of four modules with a total length of 40 cm. An improvement by a factor of about two for the electron/pion discrimination can be obtained in the case of a detailed analysis of the clusters.

  7. Research progress in radiation detectors, pattern recognition programs, and radiation damage determination in DNA

    NASA Technical Reports Server (NTRS)

    Baily, N. A.

    1973-01-01

    The radiological implications of statistical variations in energy deposition by ionizing radiation were investigated in the conduct of the following experiments: (1) study of the production of secondary particles generated by the passage of the primary radiation through bone and muscle; (2) the study of the ratio of nonreparable to reparable damage in DNA as a function of different energy deposition patterns generated by X rays versus heavy fast charged particles; (3) the use of electronic radiography systems for direct fluoroscopic tomography and for the synthesis of multiple planes and; (4) the determination of the characteristics of systems response to split fields having different contrast levels, and of minimum detectable contrast levels between the halves under realistic clinical situations.

  8. The theoretical analysis and experimental research on the optimal condition of semiconductor refrigeration

    NASA Astrophysics Data System (ADS)

    Pang, Y. F.

    2016-08-01

    The traditional limiting conditions have the biggest refrigeration quantity condition and the biggest refrigeration coefficient condition, there is a special operating mode during these conditions, enabling to both have the big refrigeration quantity and the small power loss, this operating mode is “Optimum condition”. This article first carried on the theoretical analysis to the semiconductor's optimum condition, inferred optimum electric current's theoretical formula; Carried on the experiment again to a semiconductor refrigeration box by regulating current changing operating mode, which had analyzed performance parameter's change situation under 8 kinds of condition experiments, carried on the regression analysis to the experimental data, obtained the regression equation thus discovered optimum electric current corresponding optimum condition. Carried on working under this condition, and then obtained the big refrigeration quantity and small power, which enhanced the refrigeration performance of semiconductor refrigerator. The experimental result and the theoretical analysis result tallied basically.

  9. Development of radiation detectors based on hydrogenated amorphous silicon and its alloys

    SciTech Connect

    Hong, Wan-Shick

    1995-04-01

    Hydrogenated amorphous silicon and related materials have been applied to radiation detectors, utilizing their good radiation resistance and the feasibility of making deposits over a large area at low cost. Effects of deposition parameters on various material properties of a-Si:H have been studied to produce a material satisfying the requirements for specific detection application. Thick(-{approximately}50 {mu}m), device quality a-Si:H p-i-n diodes for direct detection of minimum ionizing particles have been prepared with low internal stress by a combination of low temperature growth, He-dilution of silane, and post annealing. The structure of the new film contained voids and tiny crystalline inclusions and was different from the one observed in conventional a-Si:H. Deposition on patterned substrates was attempted as an alternative to controlling deposition parameters to minimize substrate bending and delamination of thick a-Si:H films. Growth on an inversed-pyramid pattern reduced the substrate bending by a factor of 3{approximately}4 for the same thickness film. Thin (0.1 {approximately} 0.2 {mu}m) films of a-Si:H and a-SiC:H have been applied to microstrip gas chambers to control gain instabilities due to charges on the substrate. Light sensitivity of the a-Si:H sheet resistance was minimized and the surface resistivity was successfully` controlled in the range of 10{sup 12} {approximately} 10{sup 17} {Omega}/{four_gradient} by carbon alloying and boron doping. Performance of the detectors with boron-doped a-Si:C:H layers was comparable to that of electronic-conducting glass. Hydrogen dilution of silane has been explored to improve electrical transport properties of a-Si:H material for high speed photo-detectors and TFT applications.

  10. Design, fabrication and performance optimization of bi-polar blocking planar HPGe radiation detector

    NASA Astrophysics Data System (ADS)

    Khizar, Muhammad; Wang, Guojian; Mei, Dongming

    2013-03-01

    A prototype planar radiation detector is designed, fabricated and characterized using bi-polar contact deposited on high purity single crystal germanium (HPGe). Performances of planar and semi-planar detectors are carried out for their low background counting and high absolute efficiency for high-energy photons applications. For this study, 40mm ? 15mm (diameter to vertical height) p-type HPGe samples with dislocation density EPD <3000 cm-2 are taken from HPGe ingots grown by Czochralski method. After a successful mechanical preparation, and standard cleaning and polishing procedure, samples are chemically etched by using a mixture of highly concentrated acids HF:HNO3 (1:4) in order to remove the surface oxides. A bi-polar blocking layer of amorphous germanium (a-Ge) is deposited on both the samples using low temperature RF sputtering plasma in a pre-mix precursor of H2 (15%) and Ar. For this, an optimized dose of the plasma power and chamber pressure is used for a controlled low temperature. The process was completed with the evaporation of Ohmic contacts using electron beam evaporator. This is worth noticing that special care is introduced during the handling of these samples, especially for the bi-polar blocking and metal contact layers deposition. Finally, the fabricated detectors are characterized at 77K temperature. In this paper, we show the results from the first prototype detector made of home grown crystals at USD. This work is supported by DOE grant DE-FG02-10ER46709 and the state of South Dakota.

  11. Nuclear reactor pulse tracing using a CdZnTe electro-optic radiation detector

    NASA Astrophysics Data System (ADS)

    Nelson, Kyle A.; Geuther, Jeffrey A.; Neihart, James L.; Riedel, Todd A.; Rojeski, Ronald A.; Ugorowski, Philip B.; McGregor, Douglas S.

    2012-07-01

    CdZnTe has previously been shown to operate as an electro-optic radiation detector by utilizing the Pockels effect to measure steady-state nuclear reactor power levels. In the present work, the detector response to reactor power excursion experiments was investigated. Peak power levels during an excursion were predicted to be between 965 MW and 1009 MW using the Fuchs-Nordheim and Fuchs-Hansen models and confirmed with experimental data from the Kansas State University TRIGA Mark II nuclear reactor. The experimental arrangement of the Pockels cell detector includes collimated laser light passing through a transparent birefringent crystal, located between crossed polarizers, and focused upon a photodiode. The birefringent crystal, CdZnTe in this case, is placed in a neutron beam emanating from a nuclear reactor beam port. After obtaining the voltage-dependent Pockels characteristic response curve with a photodiode, neutron measurements were conducted from reactor pulses with the Pockels cell set at the 1/4 and 3/4 wave bias voltages. The detector responses to nuclear reactor pulses were recorded in real-time using data logging electronics, each showing a sharp increase in photodiode current for the 1/4 wave bias, and a sharp decrease in photodiode current for the 3/4 wave bias. The polarizers were readjusted to equal angles in which the maximum light transmission occurred at 0 V bias, thereby, inverting the detector response to reactor pulses. A high sample rate oscilloscope was also used to more accurately measure the FWHM of the pulse from the electro-optic detector, 64 ms, and is compared to the experimentally obtained FWHM of 16.0 ms obtained with the 10B-lined counter.

  12. Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

    DOEpatents

    Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.

    2004-04-27

    A radiation detector system includes detectors having different properties (sensitivity, energy resolution) which are combined so that excellent spectral information may be obtained along with good determinations of the radiation field as a function of position.

  13. Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Adams, Aaron Lee

    Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

  14. Comparison of cosmic rays radiation detectors on-board commercial jet aircraft.

    PubMed

    Kubančák, Ján; Ambrožová, Iva; Brabcová, Kateřina Pachnerová; Jakůbek, Jan; Kyselová, Dagmar; Ploc, Ondřej; Bemš, Július; Štěpán, Václav; Uchihori, Yukio

    2015-06-01

    Aircrew members and passengers are exposed to increased rates of cosmic radiation on-board commercial jet aircraft. The annual effective doses of crew members often exceed limits for public, thus it is recommended to monitor them. In general, the doses are estimated via various computer codes and in some countries also verified by measurements. This paper describes a comparison of three cosmic rays detectors, namely of the (a) HAWK Tissue Equivalent Proportional Counter; (b) Liulin semiconductor energy deposit spectrometer and (c) TIMEPIX silicon semiconductor pixel detector, exposed to radiation fields on-board commercial Czech Airlines company jet aircraft. Measurements were performed during passenger flights from Prague to Madrid, Oslo, Tbilisi, Yekaterinburg and Almaty, and back in July and August 2011. For all flights, energy deposit spectra and absorbed doses are presented. Measured absorbed dose and dose equivalent are compared with the EPCARD code calculations. Finally, the advantages and disadvantages of all detectors are discussed.

  15. Comparison of cosmic rays radiation detectors on-board commercial jet aircraft.

    PubMed

    Kubančák, Ján; Ambrožová, Iva; Brabcová, Kateřina Pachnerová; Jakůbek, Jan; Kyselová, Dagmar; Ploc, Ondřej; Bemš, Július; Štěpán, Václav; Uchihori, Yukio

    2015-06-01

    Aircrew members and passengers are exposed to increased rates of cosmic radiation on-board commercial jet aircraft. The annual effective doses of crew members often exceed limits for public, thus it is recommended to monitor them. In general, the doses are estimated via various computer codes and in some countries also verified by measurements. This paper describes a comparison of three cosmic rays detectors, namely of the (a) HAWK Tissue Equivalent Proportional Counter; (b) Liulin semiconductor energy deposit spectrometer and (c) TIMEPIX silicon semiconductor pixel detector, exposed to radiation fields on-board commercial Czech Airlines company jet aircraft. Measurements were performed during passenger flights from Prague to Madrid, Oslo, Tbilisi, Yekaterinburg and Almaty, and back in July and August 2011. For all flights, energy deposit spectra and absorbed doses are presented. Measured absorbed dose and dose equivalent are compared with the EPCARD code calculations. Finally, the advantages and disadvantages of all detectors are discussed. PMID:25979739

  16. Radiation detection system using semiconductor detector with differential carrier trapping and mobility

    DOEpatents

    Whited, Richard C.

    1981-01-01

    A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

  17. Measurements of High Energy X-Ray Dose Distributions Using Multi-Dimensional Fiber-Optic Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Jang, Kyoung Won; Cho, Dong Hyun; Shin, Sang Hun; Lee, Bongsoo; Chung, Soon-Cheol; Tack, Gye-Rae; Yi, Jeong Han; Kim, Sin; Cho, Hyosung

    In this study, we have fabricated multi-dimensional fiber-optic radiation detectors with organic scintillators, plastic optical fibers and photo-detectors such as photodiode array and a charge-coupled device. To measure the X-ray dose distributions of the clinical linear accelerator in the tissue-equivalent medium, we have fabricated polymethylmethacrylate phantoms which have one-dimensional and two-dimensional fiber-optic detector arrays inside. The one-dimensional and two-dimensional detector arrays can be used to measure percent depth doses and surface dose distributions of high energy X-ray in the phantom respectively.

  18. Validation testing of ANSI/IEEE n42.49 standard requirements for personal emergency radiation detectors.

    PubMed

    Pibida, L; Minniti, R; O'Brien, M

    2010-04-01

    Various radiation detectors including electronic personal emergency radiation detectors (PERDs), radiochromic film cards and thermoluminescent dosimeters (TLDs) were used to validate a subset of the radiological test requirements listed in the American National Standards Institute/The Institute of Electrical and Electronic Engineers (ANSI/IEEE) N42.49 standard. The subset of tests included the following: comparing the readout of the detectors with the value given at the National Institute of Standards and Technology (NIST); testing of the alarm settings (when applicable) in air-kerma (or exposure) and air-kerma rate (or exposure rate) mode; and investigating the effect of testing the detectors mounted on a phantom and free in air. The purpose of this work was not to test the performance of the sample of detectors used. Instead, the detectors were used to validate the requirements of the written standard being developed. For this purpose, the performance and response of these instruments were recorded when placed in (137)Cs, and x-ray beams at different air-kerma rates and test conditions. The measurements described in this report were performed at the NIST x-ray and gamma-ray radiation calibration facilities. The data in this report provide a benchmark in support of the development of the ANSI/IEEE N42.49 standard.

  19. Fabrication and characterization of Cd0.9Zn0.1Te Schottky diodes for nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Muzykov, Peter G.; Krishna, Ramesh M.; Hayes, Timothy C.

    2011-09-01

    We have fabricated and characterized cadmium zinc telluride (CZT) Schottky diodes with low reverse leakage current for high resolution radiation detector applications. The diodes were made using Cd0.9Zn0.1Te detector grade crystals grown by the low temperature tellurium solvent method. The diodes were characterized using electron beam induced current (EBIC) technique to investigate crystallographic defects. The EBIC images were correlated with transmission infrared (TIR) images of CZT crystals and the EBIC contrast was attributed to the nonuniformities in spatial distribution of Te. Further characterization by the thermally stimulated current (TSC) spectroscopy revealed shallow and deep level centers with activation energies 0.25- 0.4 eV and 0.65 - 0.8 eV respectively, which we attribute to intrinsic defects associated with excess of Te. Pulse height spectra (PHS) measurements were carried out using a 241Am (59.6 keV) radiation source on the Frisch collar radiation detectors made from the suitable portions of the CZT ingot used for Schottky diode fabrication, and an energy resolution of ~4.2% FWHM was obtained.

  20. Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. R.

    2012-10-01

    We present results of structural, electrical, and defect characterization of 4H-SiC epitaxial layers and bulk crystals and show performance of the radiation detectors fabricated from these materials. The crystal quality was evaluated by x-ray diffraction (XRD) rocking curve measurements, electron beam induced current (EBIC) imaging, and defect delineating etching in conjunction with optical microscopy and scanning electron microscopy (SEM). Studies of the electrically active intrinsic defects and impurities were conducted using thermally stimulated current (TSC) measurements in a wide temperature range of 94 - 750K. The results are correlated with the capability of bulk crystals and epitaxial layers for the detection of α-particles, low to high energy x-rays and gamma rays. High barrier rectifying Schottky diodes have been fabricated and tested. The epitaxial 4H-SiC radiation detectors exhibited low leakage current (< 1 nA) at ~ 200 V operating voltage up to 200 C. The soft x-ray responsivity measurements performed at the National Synchrotron Light Source (NSLS) at Brookhaven National Lab (BNL) showed significantly improved characteristics compared to commercially-available SiC UV photodiode detectors.

  1. The ADAQ framework: An integrated toolkit for data acquisition and analysis with real and simulated radiation detectors

    NASA Astrophysics Data System (ADS)

    Hartwig, Zachary S.

    2016-04-01

    The ADAQ framework is a collection of software tools that is designed to streamline the acquisition and analysis of radiation detector data produced in modern digital data acquisition (DAQ) systems and in Monte Carlo detector simulations. The purpose of the framework is to maximize user scientific productivity by minimizing the effort and expertise required to fully utilize radiation detectors in a variety of scientific and engineering disciplines. By using a single set of tools to span the real and simulation domains, the framework eliminates redundancy and provides an integrated workflow for high-fidelity comparison between experimental and simulated detector performance. Built on the ROOT data analysis framework, the core of the ADAQ framework is a set of C++ and Python libraries that enable high-level control of digital DAQ systems and detector simulations with data stored into standardized binary ROOT files for further analysis. Two graphical user interface programs utilize the libraries to create powerful tools: ADAQAcquisition handles control and readout of real-world DAQ systems and ADAQAnalysis provides data analysis and visualization methods for experimental and simulated data. At present, the ADAQ framework supports digital DAQ hardware from CAEN S.p.A. and detector simulations performed in Geant4; however, the modular design will facilitate future extension to other manufacturers and simulation platforms.

  2. Design of a synchrotron radiation detector for the test beam lines at the Superconducting Super Collider Laboratory

    SciTech Connect

    Hutton, R.D.

    1994-01-01

    As part of the particle- and momentum-tagging instrumentation required for the test beam lines of the Superconducting Super Collider (SSC), the synchrotron radiation detector (SRD) was designed to provide electron tagging at momentum above 75 GeV. In a parallel effort to the three test beam lines at the SSC, schedule demands required testing and calibration operations to be initiated at Fermilab. Synchrotron radiation detectors also were to be installed in the NM and MW beam lines at Femilab before the test beam lines at the SSC would become operational. The SRD is the last instrument in a series of three used in the SSC test beam fines. It follows a 20-m drift section of beam tube downstream of the last silicon strip detector. A bending dipole just in of the last silicon strip detector produces the synchrotron radiation that is detected in a 50-mm-square cross section NaI crystal. A secondary scintillator made of Bicron BC-400 plastic is used to discriminate whether it is synchrotron radiation or a stray particle that causes the triggering of the NaI crystal`s photo multiplier tube (PMT).

  3. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  4. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  5. Physical design and Monte Carlo simulations of a space radiation detector onboard the SJ-10 satellite

    NASA Astrophysics Data System (ADS)

    Liu, Ya-Qing; Wang, Huan-Yu; Cui, Xing-Zhu; Peng, Wen-Xi; Fan, Rui-Rui; Liang, Xiao-Hua; Gao, Ming; Zhang, Yun-Long; Zhang, Cheng-Mo; Zhang, Jia-Yu; Yang, Jia-Wei; Wang, Jin-Zhou; Zhang, Fei; Dong, Yi-Fan; Guo, Dong-Ya; Zhou, Da-Wei

    2015-01-01

    A radiation gene box (RGB) onboard the SJ-10 satellite is a device carrying mice and drosophila cells to determine the biological effects of space radiation environment. The shielded fluxes of different radioactive sources were calculated and the linear energy transfers of γ-rays, electrons, protons and α-particles in the tissue were acquired using A-150 tissue-equivalent plastic. Then, a conceptual model of a space radiation instrument employing three semiconductor sub-detectors for deriving the charged and uncharged radiation environment of the RGB was designed. The energy depositions in the three sub-detectors were classified into 15 channels (bins) in an algorithm derived from the Monte Carlo method. The physical feasibility of the conceptual instrument was also verified by Monte Carlo simulations.

  6. Power monitoring in space nuclear reactors using silicon carbide radiation detectors

    NASA Technical Reports Server (NTRS)

    Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

    2005-01-01

    Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

  7. Present and Future of Semiconductor Pulsed Power Generator ˜Role of Power Semiconductor Devices in Plasma Research˜ 6.High-Speed, Large-Current Power Semiconductors for Pulse Power Generation

    NASA Astrophysics Data System (ADS)

    Takata, Ikunori

    This paper describes the operation principles and limits of power semiconductors. In addition, operation mechanisms of the new pulse power devices, SOS (Semiconductor Opening Switch) and dynistors, are explained qualitatively. The fastest operating power device is the series connection of comparatively low-voltage devices. For large-current operation, a uniformly operating pin-diode structure device is essential. An SOS is constructed from dozens of medium voltage (about 3kV) special hard-recovery diodes. This can shut off 2kA current at 10kV with in 10ns. The dynistor has n+pnp+ four layers and two electrodes. Serial-connected dynistors have the potential to replace thyratrons. These new devices can endure over 10 kA/cm2 at much higher voltage than their static breakdown values in the repetitive use more than 1011 times.

  8. X-RAY PHOTOEMISSION ANALYSIS OF PASSIVATED Cd(1-x)ZnxTe SURFACES FOR IMPROVED RADIATION DETECTORS

    SciTech Connect

    Nelson, A; Conway, A; Reinhardt, C; Ferreira, J; Nikolic, R; Payne, S

    2008-05-12

    Surface passivation of device-grade CdZnTe was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements after Br-MeOH (2% Br) and KOH/NH{sub 4}F/H{sub 2}O{sub 2} solutions were used to etch and oxidize the surface. High-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for radiation detector devices.

  9. Development of high pressure-high vacuum-high conductance piston valve for gas-filled radiation detectors

    NASA Astrophysics Data System (ADS)

    Prasad, D. N.; Ayyappan, R.; Kamble, L. P.; Singh, J. P.; Muralikrishna, L. V.; Alex, M.; Balagi, V.; Mukhopadhyay, P. K.

    2008-05-01

    Gas-filled radiation detectors need gas filling at pressures that range from few cms of mercury to as high as 25kg/cm2 at room temperature. Before gas-filling these detectors require evacuation to a vacuum of the order of ~1 × 10-5 mbar. For these operations of evacuation and gas filling a system consisting of a vacuum pump with a high vacuum gauge, gas cylinder with a pressure gauge and a valve is used. The valve has to meet the three requirements of compatibility with high-pressure and high vacuum and high conductance. A piston valve suitable for the evacuation and gas filling of radiation detectors has been designed and fabricated to meet the above requirements. The stainless steel body (80mm×160mm overall dimensions) valve with a piston arrangement has a 1/2 inch inlet/outlet opening, neoprene/viton O-ring at piston face & diameter for sealing and a knob for opening and closing the valve. The piston movement mechanism is designed to have minimum wear of sealing O-rings. The valve has been hydrostatic pressure tested up to 75bars and has Helium leak rate of less than 9.6×10-9 m bar ltr/sec in vacuum mode and 2×10-7 mbar ltr/sec in pressure mode. As compared to a commercial diaphragm valve, which needed 3 hours to evacuate a 7 litre chamber to 2.5×10-5 mbar, the new valve achieved vacuum 7.4×10-6mbar in the same time under the same conditions.

  10. Semiconductor active plasmonics

    NASA Astrophysics Data System (ADS)

    Mendach, Stefan; Nötzel, Richard

    2013-12-01

    Plasmonics is a research area in nanophotonics attracting increasing interest due to the potential applications in sensing and detecting, sub-wavelength confinement of light, integrated circuits, and many others. In particular, when plasmonic structures such as metal nanostructures or highly doped semiconductor particles are combined with active semiconductor materials and nanostructures, novel exciting physics and applications arise. This special section on semiconductor active plasmonics covers several of the most important and complementary directions in the field. First is the modification of the optical properties of a semiconductor nanostructure due to the close proximity of a metallic film or nanostructure. These arise from the formation hybrid plasmon/exciton states and may lead to enhanced spontaneous emission rates, directional far field emission patterns, strong coupling phenomena, and many more. Second is the realization of sub-wavelength scale nanolasers by coupling a semiconductor gain medium with a plasmonic metallic cavity. Particular emphasis is given on the major technical challenges in the fabrication of these nanolasers, such as device patterning, surface passivation, and metal deposition. While the above topics address mainly active structures and devices operating in the visible or near-infrared wavelength region, in the third, the enhanced THz extinction by periodic arrays of semiconductor particles is discussed. This is based on the build-up of surface plasmon resonances in the doped semiconductor particles which can be resonantly coupled and widely tuned by the carrier density in the semiconductor. We believe these highly diverse aspects give insight into the wide variety of new physics and applications that semiconductor active plasmonics is offering. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support, and we would also like to thank the contributors for their efforts and participation

  11. Influence of solvothermal synthesis conditions in BiSI nanostructures for application in ionizing radiation detectors

    NASA Astrophysics Data System (ADS)

    Aguiar, I.; Mombrú, M.; Pérez Barthaburu, M.; Bentos Pereira, H.; Fornaro, L.

    2016-02-01

    BiSI belongs to the A V B VI C VII chalcohalides group of compounds. These compounds show several interesting properties such as ferroelectricity, piezoelectricity along the c axis, and photoconductivity. Moreover, BiSI is a potential semiconductor material for room-temperature gamma and x-ray detection, given its band gap of 1.57 eV and its high density, 6.41 g cm-3. In this work we present BiSI nanostructures synthesized by the solvothermal method with the intention of using them for ionizing radiation detection. The solvent was varied to study its influence in morphology, particle size and size distribution. Three different conditions were tested, using either water, monoethylene glycol and a mixture of both solvents. Nanostructures were characterized by XRD to determine the phase obtained and reaction completeness; TEM was used to observe nanostructures morphology, size, size distribution and crystallinity; and finally FT-IR diffuse reflectance was used to study monoethylene glycol presence in the samples. Nanorods in the range of 100-200 nm width were obtained in all samples, but round nanoparticles of around 10 nm in diameter were also detected in samples synthesized only with monoethylene glycol. Samples synthesized in monoethylene glycol were used to fabricate pellets to construct detectors. The detectors responded to ionizing radiation and a resistivity in the order of 1013 Ω cm was estimated. This work proposes, to our knowledge, the first study of BiSI for its application in ionizing radiation detection.

  12. InP:Fe and GaAs:Cr picosecond photoconductive radiation detectors. Master's thesis

    SciTech Connect

    Keipper, P.J.

    1985-12-01

    The dark-current, impulse, and square-pulse response measurements of photoconductive devices fabricated from two different types of materials, gallium arsenide with chromium dopant (GaAs:r) and indium phosphide with iron dopant (InP:Fe) are reported. These devices have been subjected to irradiation from the S-band electron linear accelerator (LINAC) with an energy fo 100 MeV at room temperature. Fluence ranged between 10/sup 13/ and 10/sup 16/ electrons/sq cm. Dark/current decreases with increasing fluence for the GaAs:Cr devices whereas InP:Fe shows an increase in the dark current. Both types of materials exhibit extremely fast impulse response after the irradiation. Electron mobility, drift velocity, and response speed decrease with increasing fluence. Response speeds of < 100 ps are achieved by fast-carrier relaxation in the semiconductor due to the introduction of trapping and recombination centers resulting from the irradiation damage. The GaAs:Cr, unlike the InP:Fe, more closely follows the longer square-pulse exhibiting non nonlinearity. All results are consistent with previously investigated neutron irradiated devices.

  13. Growth and fabrication method of CdTe and its performance as a radiation detector

    NASA Astrophysics Data System (ADS)

    Park, Soojeong; Kim, Hyojin; Kim, Dojin

    2015-01-01

    We report the nitrogen-monoxide (NO) gas-sensing properties of transparent p-type copper-oxide (CuO) nanorod arrays synthesized by using the hydrothermal method with a CuO nanoparticle seed layer deposited on a glass substrate via sputtering process. We synthesized polycrystalline CuO nanorods measuring 200 to 300 nm in length and 20 to 30 nm in diameter for three controlled molarity ratios of 1:1, 1:2 and 1:4 between copper nitrate trihydrate [Cu(NO2)2·3H2O] and hexamethylenetetramine (C6H12N4). The crystal structures and morphologies of the synthesized CuO nanorod arrays were examined using grazing incidence X-ray diffraction and scanning electron microscopy. The gas-sensing measurements for NO gas in dry air indicated that the CuO nanorodarray-based gas sensors synthesized under hydrothermal condition at a molarity ratio of 1:2 showed the best gas sensing response to NO gas. These CuO nanorod-array gas sensors exhibited a highly sensitive response to NO gas, with a maximum sensitivity of about 650% for 10 ppm NO in dry air at an operating temperature of 100 ℃. These transparent p-type CuO nanorod-array gas sensors have shown a reversible and reliable response to NO gas over a range of operating temperatures. These results indicate certain potential use of p-type oxide semiconductor CuO nanorods as sensing materials for several types of gas sensors, including p — n junction gas sensors.

  14. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  15. Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

    PubMed

    Ha, Jang Ho; Kim, Han Soo

    2013-11-01

    The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation.

  16. Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

    DOEpatents

    Hansen, W.L.; Haller, E.E.

    1980-09-19

    Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

  17. Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

    PubMed

    Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

  18. Correction-less dosimetry of nonstandard photon fields: a new criterion to determine the usability of radiation detectors.

    PubMed

    Kamio, Y; Bouchard, H

    2014-09-01

    In the IAEA-AAPM dosimetry formalism, detector measurements in general nonstandard conditions are corrected using the factor k(f(clin),f(msr))(Q(clin),Q(msr)). This factor needs to be evaluated on a case-by-case basis which is difficult to accomplish in practice. The present paper aims to provide a method that allows neglecting correction factors for small and composite IMRT fields by first determining a radiation detector's usability in these fields. Detailed models of nine radiation detectors are built: four ionization chambers (NE2571, A12, A1SL, A14), three small field detectors (PTW31018 microLion, PTW60003 natural diamond, PTW60012 unshielded diode) and two near water-equivalent detectors (alanine, W1 scintillating fiber). Using the egs_chamber Monte Carlo code, dose response functions at 6 MV and 25 MV are sampled for each detector and their corresponding volume of water. These functions are then used with a newly derived criterion to evaluate an upper bound ξ(f(ns),f(msr))(Q(ns),Q(msr)) on the variable ε(f(ns),f(msr))(Q(ns),Q(msr)) if no field collimation/modulation occurs over a given perturbation zone. The variable ε(f(ns),f(msr))(Q(ns),Q(msr)) is defined as the absolute value of the relative deviation from unity of a nonstandard field quality correction factor k(f(ns),f(msr))(Q(ns),Q(msr)). Using the same criterion, perturbation zones are evaluated by finding the smallest field size allowed for correction-less dosimetry with a given tolerance ξ(f(ns),f(msr))(Q(ns),Q(msr)). For composite fields, the sensitivity of detectors to the non-uniformity of virtual symmetric collapsed beams over regions of interest specified by the criterion is studied to estimate an upper bound ξ ̃(f(ns),f(ref))(Q(ns),Q) on ε(f(ns),f(ref))(Q(ns),Q) for a given beam flatness. Finally, a newly defined perturbation function is used to minimize the perturbations of the microLion chamber through density compensation. The theoretical criterion shows good agreement with full

  19. Cross-calibration of the transition radiation detector of AMS-02 for an energy measurement of cosmic-ray ions

    NASA Astrophysics Data System (ADS)

    Obermeier, A.; Korsmeier, M.

    2015-01-01

    Since May 2011 the AMS-02 experiment is installed on the International Space Station and is observing cosmic radiation. It consists of several state-of-the-art sub-detectors, which redundantly measure charge and energy of traversing particles. Due to the long exposure time of AMS-02 of many years the measurement of momentum for protons and ions is limited systematically by the spatial resolution and magnetic field strength of the silicon tracker. The maximum detectable rigidity for protons is about 1.8 TV, for helium about 3.6 TV. We investigate the possibility to extend the range of the energy measurement for heavy nuclei (Z ⩾ 2) with the transition radiation detector (TRD). The response function of the TRD shows a steep increase in signal from the level of ionization at a Lorentz factor γ of about 500 to γ ≈ 20, 000 , where the transition radiation signal saturates. For heavy ions the signal fluctuations in the TRD are sufficiently small to allow an energy measurement with the TRD beyond the limitations of the tracker. The energy resolution of the TRD is determined and reaches a level of about 20% for boron (Z = 5). After adjusting the operational parameters of the TRD a measurement of boron and carbon could be possible up to 5 TeV/nucleon.

  20. Measurements of mechanical dissipation in high sound velocity materials: implications for resonant-mass gravitational radiation detectors

    NASA Astrophysics Data System (ADS)

    Hu, En-Ke; Zhou, C.; Mann, L.; Michelson, P. F.; Price, J. C.

    1991-07-01

    The sensitivity of resonant-mass gravitational radiation detectors depends on both the antenna cross-section and the detector noise. The cross-section is determined by the sound velocity vs and density ϱ of the antenna material, while the principal detector noise sources are thermal Nyquist noise and noise due to the readout electromechanical amplifier. The thermal noise is proportional to T/Q, where T is the temperature and Q is the antenna's mechanical quality factor. For a given frequency and antenna geometry, the cross-section is proportional to ϱ v5s. Thus the speed of sound and Q are important figures-of-merit in selecting the antenna material. Materials with high vs are available that in principle could provide about a hundred-fold increase in the cross-section of resonant-mass gravity wave detectors as compared to current generation detectors. In this Letter we report the results of measurements of the temperature-dependent mechanical losses associated with excitation of the fundamental longitudinal acoustic mode in several potentially suitable materials. We also discuss the impact that these materials could have on the sensitivity of resonant-mass detectors.

  1. Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, SpectrumPlus, and Coplanar Grid

    SciTech Connect

    Ralph B. James

    2000-01-07

    Device simulations of (1) the laterally-contacted-unipolar-nuclear detector (LUND), (2) the SpectrumPlus, (3) and the coplanar grid made of Cd{sub 0.9}Zn{sub 0.1}Te (CZT) were performed for {sup 137}Cs irradiation by 662.15 keV gamma-rays. Realistic and controlled simulations of the gamma-ray interactions with the CZT material were done using the MCNP4B2 Monte Carlo program, and the detector responses were simulated using the Sandia three-dimensional multielectrode simulation program (SandTMSP). The simulations were done for the best and the worst expected carrier nobilities and lifetimes of currently commercially available CZT materials for radiation detector applications. For the simulated unipolar devices, the active device volumes were relatively large and the energy resolutions were fairly good, but these performance characteristics were found to be very sensitive to the materials properties. The internal electric fields, the weighting potentials, and the charge induced efficiency maps were calculated to give insights into the operation of these devices.

  2. An evaluation of the Kearny Fallout Meter (KFM), a radiation detector constructed from commonly available household materials.

    PubMed

    McDonald, J T; West, W G; Kearfott, K J

    2004-11-01

    A radiation detector constructed of common household materials was developed at Oak Ridge National Laboratory (ORNL) by Cresson H. Kearny and has been referred to as the Kearny Fallout Meter (KFM). Developed during the height of the Cold War, the KFM was intended to place a radiation meter capable of measuring fallout from nuclear weapons in the hands of every U.S. citizen. Instructions for the construction of the meter, as well as information about radiation health effects, were developed in the form of multi-page newspaper insert. Subsequently, the sensitivity of the meter was refined by a high school teacher, Dr. Paul S. Lombardi, for use in demonstrations about radiation. The meter is currently being marketed for survivalists in light of potential radiation terrorist concerns. The KFM and Lombardi's variation of it are constructed and evaluated for this work. Calibrated tests of the response and variations in response are reported. A critique of the multi-page manual is made. In addition, the suitability of using such a detector, in terms of actual ease of construction and practical sensitivity, is discussed for its use in demonstrations and introductory classes on nuclear topics.

  3. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  4. Improved Growth Methods for LaBr3 Scintillation Radiation Detectors

    SciTech Connect

    McGregor, Douglas S

    2011-05-01

    The objective is to develop advanced materials for deployment as high-resolution gamma ray detectors. Both LaBr3 and CeBr3 are advanced scintillation materials, and will be studied in this research. Prototype devices, in collaboration Sandia National Laboratories, will be demonstrated along with recommendations for mass production and deployment. It is anticipated that improved methods of crystal growth will yield larger single crystals of LaBr3 for deployable room-temperature operated gamma radiation spectrometers. The growth methods will be characterized. The LaBr3 and CeBr3 scintillation crystals will be characterized for light yield, spectral resolution, and for hardness.

  5. Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

    SciTech Connect

    Qureshi, S.

    1991-01-01

    For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine.

  6. Growth of mercuric iodide (HgI2) for nuclear radiation detectors

    NASA Technical Reports Server (NTRS)

    Vandenberg, L.; Schnepple, W. F.

    1988-01-01

    Mercuric iodide is a material used for the fabrication of the sensing element in solid state X-ray and gamma ray detecting instruments. The operation of the devices is determined to a large degree by the density of structural defects in the single crystalline material used in the sensing element. Since there were strong indications that the quality of the material was degraded by the effects of gravity during the growth process, a research and engineering program was initiated to grow one or more crystals of mercuric iodide in the reduced gravity environment of space. A special furnace assembly was designed which could be accommodated in a Spacelab rack, and at the same time made it possible to use the same growth procedures and controls used when growing a crystal on the ground. The space crystal, after the flight, was subjected to the same evaluation methods used for earth-grown crystals, so that comparisons could be made.

  7. Studying radiation hardness of a cadmium tungstate crystal based radiation detector

    NASA Astrophysics Data System (ADS)

    Shtein, M. M.; Smekalin, L. F.; Stepanov, S. A.; Zatonov, I. A.; Tkacheva, T. V.; Usachev, E. Yu

    2016-06-01

    The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector based on cadmium tungstate crystal and its structural components individually. The article describes a layout of an experimental facility that was used for measurements of radiation hardness. The radiation dose dependence of the photodiode current is presented, when it is excited by a light flux of a scintillator or by an external light source. Experiments were carried out to estimate radiation hardness of two types of optical glue used in detector production; they are based on silicon rubber and epoxy. With the help of a spectrophotometer and cobalt gun, each of the glue samples was measured for a relative light transmission factor with different wavelengths, depending on the radiation dose. The obtained data are presented in a comprehensive analysis of the results. It was determined, which of the glue samples is most suitable for production of detectors working under exposure to strong radiation.

  8. An XPS study of bromine in methanol etching and hydrogen peroxide passivation treatments for cadmium zinc telluride radiation detectors

    NASA Astrophysics Data System (ADS)

    Babar, S.; Sellin, P. J.; Watts, J. F.; Baker, M. A.

    2013-01-01

    The performance of single crystal CdZnTe radiation detectors is dependent on both the bulk and the surface properties of the material. After single crystal fabrication and mechanical polishing, modification of the surface to remove damage and reduce the surface leakage current is generally achieved through chemical etching followed by a passivation treatment. In this work, CdZnTe single crystals have been chemically etched using a bromine in methanol (BM) treatment. The BM concentrations employed were 0.2 and 2.0 (v/v) % and exposure times varied between 5 and 120 s. Angle resolved XPS and sputter depth profiling has been employed to characterize the surfaces for the different exposure conditions. A Te rich surface layer was formed for all exposures and the layer thickness was found to be independent of exposure time. The enriched Te layer thickness was accurately determined by calibrating the sputter rate against a CdTe layer of known thickness. For BM concentrations of 0.2 (v/v) % and 2 (v/v) %, the Te layer thickness was determined to be 1.3 ± 0.2 and 1.8 ± 0.2 nm, respectively. The BM etched surfaces have subsequently been passivated in a 30 wt.% H2O2 solution employing exposure time of 15 s. The oxide layer thickness has been calculated using two standard XPS methodologies, based on the Beer-Lambert expression. The TeO2 thickness calculated from ARXPS data are slightly higher than the thickness obtained by the simplified Beer-Lambert expression. For BM exposures of 30-120 s followed by a passivation treatment of 30 wt. % H2O2 solution employing an exposure time 15 s, the ARXPS method gave an average TeO2 thickness value of 1.20 nm and the simplified Beer-Lambert expression gave an average thickness value of 0.99 nm.

  9. 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detectors Workshop

    NASA Astrophysics Data System (ADS)

    The Nuclear Science Symposium (NSS) offers an outstanding opportunity for scientists and engineers interested or actively working in the fields of nuclear science, radiation instrumentation, software and their applications, to meet and discuss with colleagues from around the world. The program emphasizes the latest developments in technology and instrumentation and their implementation in experiments for space sciences, accelerators, other radiation environments, and homeland security. The Medical Imaging Conference (MIC) is the foremost international scientific meeting on the physics, engineering and mathematical aspects of nuclear medicine based imaging. As the field develops, multi-modality approaches are becoming more and more important. The content of the MIC reflects this, with a growing emphasis on the methodologies of X-ray, optical and MR imaging as they relate to nuclear imaging techniques. In addition, specialized topics will be addressed in the Short Courses and Workshops programs. The Workshop on Room-Temperature Semiconductor Detectors (RTSD) represents the largest forum of scientists and engineers developing new semiconductor radiation detectors and imaging arrays. Room-temperature solid-state radiation detectors for X-ray, gamma-ray, and neutron radiation are finding increasing applications in such diverse fields as medicine, homeland security, astrophysics and environmental remediation. The objective of this workshop is to provide a forum for discussion of the state of the art of material development for semiconductor, scintillator, and organic materials for detection, materials characterization, device fabrication and technology, electronics and applications.

  10. Microwave Radiation Detector

    NASA Technical Reports Server (NTRS)

    Lesh, J. R.

    1984-01-01

    Direct photon detector responds to microwave frequencies. Method based on trapped-ion frequency-generation standards proposed to detect radio-frequency (RF) radiation at 40.5 GHz. Technique used for directdetection (RF) communication, radar, and radio astronomy.

  11. Flexible composite radiation detector

    DOEpatents

    Cooke, D. Wayne; Bennett, Bryan L.; Muenchausen, Ross E.; Wrobleski, Debra A.; Orler, Edward B.

    2006-12-05

    A flexible composite scintillator was prepared by mixing fast, bright, dense rare-earth doped powdered oxyorthosilicate (such as LSO:Ce, LSO:Sm, and GSO:Ce) scintillator with a polymer binder. The binder is transparent to the scintillator emission. The composite is seamless and can be made large and in a wide variety of shapes. Importantly, the composite can be tailored to emit light in a spectral region that matches the optimum response of photomultipliers (about 400 nanometers) or photodiodes (about 600 nanometers), which maximizes the overall detector efficiency.

  12. Precision synchrotron radiation detectors

    SciTech Connect

    Levi, M.; Rouse, F.; Butler, J.; Jung, C.K.; Lateur, M.; Nash, J.; Tinsman, J.; Wormser, G.; Gomez, J.J.; Kent, J.

    1989-03-01

    Precision detectors to measure synchrotron radiation beam positions have been designed and installed as part of beam energy spectrometers at the Stanford Linear Collider (SLC). The distance between pairs of synchrotron radiation beams is measured absolutely to better than 28 /mu/m on a pulse-to-pulse basis. This contributes less than 5 MeV to the error in the measurement of SLC beam energies (approximately 50 GeV). A system of high-resolution video cameras viewing precisely-aligned fiducial wire arrays overlaying phosphorescent screens has achieved this accuracy. Also, detectors of synchrotron radiation using the charge developed by the ejection of Compton-recoil electrons from an array of fine wires are being developed. 4 refs., 5 figs., 1 tab.

  13. Radiation detector spectrum simulator

    DOEpatents

    Wolf, Michael A.; Crowell, John M.

    1987-01-01

    A small battery operated nuclear spectrum simulator having a noise source nerates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith generates several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

  14. Radiation detector spectrum simulator

    DOEpatents

    Wolf, M.A.; Crowell, J.M.

    1985-04-09

    A small battery operated nuclear spectrum simulator having a noise source generates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith to generate several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

  15. AIRBORNE RADIATION DETECTOR

    DOEpatents

    Cartmell, T.R.; Gifford, J.F.

    1959-08-01

    An ionization chamber used for measuring the radioactivity of dust present in atmospheric air is described. More particularly. the patent describes a device comprising two concentric open ended, electrically connected cylinders between which is disposed a wire electrcde. A heating source is disposed inside of the cylinder to circulate air through the space between the two cylinders by convective flow. A high voltage electric field between the wire electrcde of the electrically connected cylinder will cause ionization of the air as it passes therethrough.

  16. Underwater radiation detector

    DOEpatents

    Kruse, Lyle W.; McKnight, Richard P.

    1986-01-01

    A detector apparatus for differentiating between gamma and neutron radiation is provided. The detector includes a pair of differentially shielded Geiger-Mueller tubes. The first tube is wrapped in silver foil and the second tube is wrapped in lead foil. Both the silver and lead foils allow the passage of gamma rays at a constant rate in a gamma ray only field. When neutrons are present, however, the silver activates and emits beta radiation that is also detected by the silver wrapped Geiger-Mueller tube while the radiation detected by the lead wrapped Geiger-Mueller tube remains constant. The amount of radiation impinging on the separate Geiger-Mueller tubes is then correlated in order to distinguish between the neutron and gamma radiations.

  17. Advanced Radiation Detector Development

    SciTech Connect

    The University of Michigan

    1998-07-01

    Since our last progress report, the project at The University of Michigan has continued to concentrate on the development of gamma ray spectrometers fabricated from cadmium zinc telluride (CZT). This material is capable of providing energy resolution that is superior to that of scintillation detectors, while avoiding the necessity for cooling associated with germanium systems. In our past reports, we have described one approach (the coplanar grid electrode) that we have used to partially overcome some of the major limitations on charge collection that is found in samples of CZT. This approach largely eliminates the effect of hole motion in the formation of the output signal, and therefore leads to pulses that depend only on the motion of a single carrier (electrons). Since electrons move much more readily through CZT than do holes, much better energy resolution can be achieved under these conditions. In our past reports, we have described a 1 cm cube CZT spectrometer fitted with coplanar grids that achieved an energy resolution of 1.8% from the entire volume of the crystal. This still represents, to our knowledge, the best energy resolution ever demonstrated in a CZT detector of this size.

  18. Ionizing Radiation Detector

    DOEpatents

    Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

    2003-11-18

    A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water after attaching electrical contacts to the crystal surface.

  19. Gaseous Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Sauli, Fabio

    2014-06-01

    1. Introduction; 2. Electromagnetic interactions of charged particles with matter; 3. Interactions of photons and neutrons with matter; 4. Drift and diffusion of charges in gases; 5. Collisional excitations and charge multiplication in uniform fields; 6. Parallel plate counters; 7. Proportional counters; 8. Multiwire proportional chambers; 9. Drift chambers; 10. Time projection chambers; 11. Multitube arrays; 12. Resistive plate chambers; 13. Micro-pattern gas detectors; 14. Cherenkov ring imaging; 15. Miscellaneous detectors and applications; 16. Time degeneracy and aging; Further reading; References; Index.

  20. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  1. Characterization of a novel two dimensional diode array the ''magic plate'' as a radiation detector for radiation therapy treatment

    SciTech Connect

    Wong, J. H. D.; Fuduli, I.; Carolan, M.; Petasecca, M.; Lerch, M. L. F.; Perevertaylo, V. L.; Metcalfe, P.; Rosenfeld, A. B.

    2012-05-15

    the beam perturbation study, the surface dose increased by 12.1% for a 30 x 30 cm{sup 2} field size at the source to detector distance (SDD) of 80 cm whilst the transmission for the MP was 99%. Conclusions: The radiation response of the magic plate was successfully characterized. The array of epitaxial silicon based detectors with ''drop-in'' packaging showed properties suitable to be used as a simplified multipurpose and nonperturbing 2D radiation detector for radiation therapy dosimetric verification.

  2. Personal radiation detector at a high technology readiness level that satisfies DARPA's SN-13-47 and SIGMA program requirements

    NASA Astrophysics Data System (ADS)

    Ginzburg, D.; Knafo, Y.; Manor, A.; Seif, R.; Ghelman, M.; Ellenbogen, M.; Pushkarsky, V.; Ifergan, Y.; Semyonov, N.; Wengrowicz, U.; Mazor, T.; Kadmon, Y.; Cohen, Y.; Osovizky, A.

    2015-06-01

    There is a need to develop new personal radiation detector (PRD) technologies that can be mass produced. On August 2013, DARPA released a request for information (RFI) seeking innovative radiation detection technologies. In addition, on December 2013, a Broad Agency Announcement (BAA) for the SIGMA program was released. The RFI requirements focused on a sensor that should possess three main properties: low cost, high compactness and radioisotope identification capabilities. The identification performances should facilitate the detection of a hidden threat, ranging from special nuclear materials (SNM) to commonly used radiological sources. Subsequently, the BAA presented the specific requirements at an instrument level and provided a comparison between the current market status (state-of-the-art) and the SIGMA program objectives. This work presents an optional alternative for both the detection technology (sensor with communication output and without user interface) for DARPA's initial RFI and for the PRD required by the SIGMA program. A broad discussion is dedicated to the method proposed to fulfill the program objectives and to the selected alternative that is based on the PDS-GO design and technology. The PDS-GO is the first commercially available PRD that is based on a scintillation crystal optically coupled with a silicon photomultiplier (SiPM), a solid-state light sensor. This work presents the current performance of the instrument and possible future upgrades based on recent technological improvements in the SiPM design. The approach of utilizing the SiPM with a commonly available CsI(Tl) crystal is the key for achieving the program objectives. This approach provides the appropriate performance, low cost, mass production and small dimensions; however, it requires a creative approach to overcome the obstacles of the solid-state detector dark current (noise) and gain stabilization over a wide temperature range. Based on the presented results, we presume that

  3. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  4. Study of Deterioration in a Piezoelectric Lead Zirconate Titanate Radiation Detector through Measurement of the Electromechanical Coupling Factor with 400 MeV/n Zenon Ions

    NASA Astrophysics Data System (ADS)

    Kobayashi, Masanori; Miyachi, Takashi; Takechi, Seiji; Sekiguchi, Masahiro; Shibata, Hiromi; Okada, Nagaya; Hattori, Maki; Okudaira, Osamu; Fujii, Masayuki; Murakami, Takeshi; Uchihori, Yukio

    2013-12-01

    The variation of the electromechanical coupling factor (ECF) was measured by bombarding a piezoelectric lead zirconate titanate (PZT) element with 400 MeV/n xenon ions. The element was exposed to energies up to 104 J, during which time the ECF was observed by the resonance method. The ECF gradually decreased with the energy accumulated during irradiation, and its behavior was scaled with an empirical formula. This decrease suggests that the piezoelectric quality deteriorated; hence, the sensitivity of the PZT radiation detector was considered to be degraded as well. The variation ultimately originated in resonance-associated processes. A potential detector suitable for use in severe-radiation environments was discussed.

  5. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  6. Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

    SciTech Connect

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, James E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  7. Survey of cryogenic semiconductor devices

    SciTech Connect

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  8. Handbook of Semiconductor Technology, 2 Volume Set

    NASA Astrophysics Data System (ADS)

    Jackson, Kenneth A.; Schröter, Wolfgang

    2000-09-01

    Semiconductor technology is the basis of today's microelectronics industry with its many impacts on our modern life, i.e. computer and communication technology. This two-volume handbook covers the basics of semiconductor processing technology, which are as essential for the design of new microelectronic devices as the fundamental physics. Volume 1 'Electronic Structure and Properties' covers the structure and properties of semiconductors, with particular emphasis on concepts relevant to semiconductor technology. Volume 2 'Processing of Semiconductors' deals with the enabling materials technology for the electronics industry. World-renowned authors have contributed to this unique treatment of the processing of semiconductors and related technologies. Of interest to physicists and engineers in research and in the electronics industry, this is a valuable reference source and state-of-the-art review by the world's top authors.

  9. Solar-induced organic photochemistry at semiconductor surfaces. Progress report on research conducted in 1980-81

    SciTech Connect

    Fox, M.A.

    1981-03-01

    Electrodes modified by covalent attachment of arenes and highly absorptive carbanions have been synthesized and their utility in photogalvanic cells has been determined. Tenfold improvement in photocurrent production in photogalvanic operation has been achieved. Several oxocarbon anions have been shown to be useful photocatalysts for electron exchange at semiconductor electrodes, the observed currents being dependent on the structure and oxidation potential of the anion. Electrodes with cyclooctatetraene derivative modifications have been examined in non-aqueous solution, while the oxocarbon sensitizers have been employed with aqueous electrolytes. Two new types of photocatalyzed quantum processes have been discovered: mediated oxidative coupling of anions and photocatalyzed olefin oxidations. Mechanistic details for these reactions are under active study. The use of highly colored anions as redox photocatalysts has been established and their utility in organic electrochemistry is being examined. A polycyclic heteroatom-containing aromatic compound has been shown to exhibit redox photochromism. Visible light initiates a reduction to a species which, with catalytic turnovers of greater than 500, serves to reduce cleanly a variety of dissolved oxidants.

  10. Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

    NASA Technical Reports Server (NTRS)

    Burshtein, Z.; Jayatirtha, H. N.; Burger, A.; Butler, J. F.; Apotovsky, B.; Doty, F. P.

    1993-01-01

    Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

  11. Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy.

    PubMed

    Gu, Yaxu; Jie, Wanqi; Rong, Caicai; Xu, Lingyan; Xu, Yadong; Lv, Haoyan; Shen, Hao; Du, Guanghua; Guo, Na; Guo, Rongrong; Zha, Gangqiang; Wang, Tao; Xi, Shouzhi

    2016-09-01

    The influence of damage induced by 2MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3×10(11)p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50V to 400V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50V and 100V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects. PMID:27399802

  12. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  13. Organic Semiconductors and its Applications

    NASA Astrophysics Data System (ADS)

    Kamalasanan, M. N.

    2011-10-01

    Organic semiconductors in the form of evaporated or spin coated thin films have many optoelectronic applications in the present electronic industry. They are frequently used in many type of displays, photo detectors, photoconductors for photocopiers and photovoltaic cells. But many p-conjugated molecules and polymer based devices do not provide satisfactory device performance and operational stability. Most of these problems are related to the interfaces they make with other organic materials and electrodes and the low conductivity of the organic layers. The study of organic-metal and organic—organic interfaces as well as electrical doping of organic semiconductors are very important areas of research at present. In this talk, I will be discussing some of the recent advances in this field as well as some of our own results in the area of interface modification and electrical doping of organic semiconductors.

  14. Detection of fast neutrons from D-T nuclear reaction using a 4H-SiC radiation detector

    NASA Astrophysics Data System (ADS)

    Zatko, Bohumir; Sagatova, Andrea; Sedlackova, Katarina; Necas, Vladimir; Dubecky, Frantisek; Solar, Michael; Granja, Carlos

    2016-09-01

    The particle detector based on a high purity epitaxial layer of 4H-SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H-SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D-T (deuterium-tritium) nuclear reaction. The epitaxial layer with a thickness of 105 μm was used as a detection part. A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm2) at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D-T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.

  15. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  16. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  17. Nuclear Science Symposium, 21st, Scintillation and Semiconductor Counter Symposium, 14th, and Nuclear Power Systems Symposium, 6th, Washington, D.C., December 11-13, 1974, Proceedings

    NASA Technical Reports Server (NTRS)

    1975-01-01

    Papers are presented dealing with latest advances in the design of scintillation counters, semiconductor radiation detectors, gas and position sensitive radiation detectors, and the application of these detectors in biomedicine, satellite instrumentation, and environmental and reactor instrumentation. Some of the topics covered include entopistic scintillators, neutron spectrometry by diamond detector for nuclear radiation, the spherical drift chamber for X-ray imaging applications, CdTe detectors in radioimmunoassay analysis, CAMAC and NIM systems in the space program, a closed loop threshold calibrator for pulse height discriminators, an oriented graphite X-ray diffraction telescope, design of a continuous digital-output environmental radon monitor, and the optimization of nanosecond fission ion chambers for reactor physics. Individual items are announced in this issue.

  18. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  19. Polonium-Lead Extractions to Determine the Best Method for the Quantification of Clean Lead Used in Low-Background Radiation Detectors

    SciTech Connect

    Miley, Sarah M.; Payne, Rosara F.; Schulte, Shannon M.; Finn, Erin C.

    2009-12-01

    Radiation detectors used to search for the existence of exceptionally rare phenomena, such as double-beta decay and dark matter interactions, as well as tiny traces of environmental radioactivity, require the elimination of background signals. Modern detection systems created from ultra pure materials and operated deep underground may be sensitive enough to "see" these rare phenomena, but background activity in Pb gamma-ray shielding could still be a critical stumbling block owing to alpha and beta emissions of Pb, Bi, and Po in the mass 210 chain. To minimize the probability of overwhelming activity from Pb, the alpha activity of 210Pb is quantified. However, a reliable quantification procedure that does not require large volumes of chemicals has not yet been established. Two procedures created for this purpose have been tested for the quantification of alpha activity in lead. Both procedures were designed to start with less than 10g Pb samples to reduce reagents needed and combined precipitation with column separation to isolate 210Pb, followed by alpha spectrometry. One procedure shows promise for obtaining high recoveries and good separation.

  20. Invited Review Article: Physics and Monte Carlo techniques as relevant to cryogenic, phonon, and ionization readout of Cryogenic Dark Matter Search radiation detectors

    SciTech Connect

    Leman, Steven W.

    2012-09-15

    This review discusses detector physics and Monte Carlo techniques for cryogenic, radiation detectors that utilize combined phonon and ionization readout. A general review of cryogenic phonon and charge transport is provided along with specific details of the Cryogenic Dark Matter Search detector instrumentation. In particular, this review covers quasidiffusive phonon transport, which includes phonon focusing, anharmonic decay, and isotope scattering. The interaction of phonons in the detector surface is discussed along with the downconversion of phonons in superconducting films. The charge transport physics include a mass tensor which results from the crystal band structure and is modeled with a Herring-Vogt transformation. Charge scattering processes involve the creation of Neganov-Luke phonons. Transition-edge-sensor (TES) simulations include a full electric circuit description and all thermal processes including Joule heating, cooling to the substrate, and thermal diffusion within the TES, the latter of which is necessary to model normal-superconducting phase separation. Relevant numerical constants are provided for these physical processes in germanium, silicon, aluminum, and tungsten. Random number sampling methods including inverse cumulative distribution function (CDF) and rejection techniques are reviewed. To improve the efficiency of charge transport modeling, an additional second order inverse CDF method is developed here along with an efficient barycentric coordinate sampling method of electric fields. Results are provided in a manner that is convenient for use in Monte Carlo and references are provided for validation of these models.

  1. 2010 Defects in Semiconductors GRC

    SciTech Connect

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  2. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Zygmunt (Inventor); Kressel, Henry (Inventor)

    1977-01-01

    A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

  3. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  4. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  5. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  6. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  7. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  8. Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

    DOEpatents

    Iwanczyk, Jan S.; Patt, Bradley E.

    2003-01-01

    Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.

  9. Characteristics of a Frisch collar grid CdZnTe radiation detector grown by low-pressure Bridgman method

    NASA Astrophysics Data System (ADS)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    A single-polarity charge-sensing method was studied by using a CdZnTe Frisch collar grid detector grown by using a low-pressure Bridgeman furnace at the Korea Atomic Energy Research Institute (KAERI). The Frisch collar grid CdZnTe detector has an active volume of 5 × 5 × 10 mm3, and was fabricated from a single crystal, Teflon tape and copper tape used as a Frisch collar grid. A room-temperature energy resolution of 6% full width at half maximum (FWHM) was obtained for the 662keV peak of Cs-137 without any additional electrical corrections. The detector's fabrication process is described, and its characteristics are discussed. Finally, the charge transport properties and gamma-ray energy resolution of the fabricated Frisch collar grid detector are compared with those of two other Frisch collar detectors grown by using different crystal growth methods and purchased from eV-products and Redlen technology.

  10. Synthesis of semiconductor nanoparticles.

    PubMed

    Chen, Xianfeng; Dobson, Peter J

    2012-01-01

    Here, we describe typical methods and provide detailed experimental protocols for synthesizing and processing various semiconductor nanoparticles which have potential application in biology and medicine. These include synthesis of binary semiconductor nanoparticles; core@shell nanoparticles and alloyed nanoparticles; size-selective precipitation to obtain monodisperse nanoparticles; and strategies for phase transfer of nanoparticles from organic solution to aqueous media. PMID:22791427

  11. SU-F-BRE-01: A Rapid Method to Determine An Upper Limit On a Radiation Detector's Correction Factor During the QA of IMRT Plans

    SciTech Connect

    Kamio, Y; Bouchard, H

    2014-06-15

    Purpose: Discrepancies in the verification of the absorbed dose to water from an IMRT plan using a radiation dosimeter can be wither caused by 1) detector specific nonstandard field correction factors as described by the formalism of Alfonso et al. 2) inaccurate delivery of the DQA plan. The aim of this work is to develop a simple/fast method to determine an upper limit on the contribution of composite field correction factors to these discrepancies. Methods: Indices that characterize the non-flatness of the symmetrised collapsed delivery (VSC) of IMRT fields over detector-specific regions of interest were shown to be correlated with IMRT field correction factors. The indices introduced are the uniformity index (UI) and the mean fluctuation index (MF). Each one of these correlation plots have 10 000 fields generated with a stochastic model. A total of eight radiation detectors were investigated in the radial orientation. An upper bound on the correction factors was evaluated by fitting values of high correction factors for a given index value. Results: These fitted curves can be used to compare the performance of radiation dosimeters in composite IMRT fields. Highly water-equivalent dosimeters like the scintillating detector (Exradin W1) and a generic alanine detector have been found to have corrections under 1% over a broad range of field modulations (0 – 0.12 for MF and 0 – 0.5 for UI). Other detectors have been shown to have corrections of a few percent over this range. Finally, a full Monte Carlo simulations of 18 clinical and nonclinical IMRT field showed good agreement with the fitted curve for the A12 ionization chamber. Conclusion: This work proposes a rapid method to evaluate an upper bound on the contribution of correction factors to discrepancies found in the verification of DQA plans.

  12. Alpha-beta radiation detector

    DOEpatents

    Fleming, D.M.; Simmons, K.L.; Froelich, T.J.; Carter, G.L.

    1998-08-18

    The invention is based in part on the discovery that a plastic housing that is lightweight is surprisingly efficient inasmuch as background signals from any gamma radiation are significantly reduced by using a plastic housing instead of a metal housing. A further aspect of the present invention is the profile of the housing as a bi-linear approximation to a parabola resulting in full optical response from any location on the scintillation material to the photomultiplier tube. A yet further aspect of the present invention is that the survey probe is resistant to magnetic fields. A yet further aspect of the present invention is the use of a snap-fit retaining bracket that overcomes the need for multiple screws. 16 figs.

  13. Alpha-beta radiation detector

    DOEpatents

    Fleming, Dale M.; Simmons, Kevin L.; Froelich, Thomas J.; Carter, Gregory L.

    1998-01-01

    The invention is based in part on the discovery that a plastic housing that is lightweight is surprisingly efficient inasmuch as background signals from any gamma radiation are significantly reduced by using a plastic housing instead of a metal housing. A further aspect of the present invention is the profile of the housing as a bi-linear approximation to a parabola resulting in full optical response from any location on the scintillation material to the photomultiplier tube. A yet further aspect of the present invention is that the survey probe is resistant to magnetic fields. A yet further aspect of the present invention is the use of a snap-fit retaining bracket that overcomes the need for multiple screws.

  14. Imaging radiation detector with gain

    DOEpatents

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1984-01-01

    A radiation imaging device which has application in x-ray imaging. The device can be utilized in CAT scanners and other devices which require high sensitivity and low x-ray fluxes. The device utilizes cumulative multiplication of charge carriers on the anode plane and the collection of positive ion charges to image the radiation intensity on the cathode plane. Parallel and orthogonal cathode wire arrays are disclosed as well as a two-dimensional grid pattern for collecting the positive ions on the cathode.

  15. Imaging radiation detector with gain

    DOEpatents

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1982-07-21

    A radiation imaging device which has application in x-ray imaging. The device can be utilized in CAT scanners and other devices which require high sensitivity and low x-ray fluxes. The device utilizes cumulative multiplication of charge carriers on the anode plane and the collection of positive ion charges to image the radiation intensity on the cathode plane. Parallel and orthogonal cathode wire arrays are disclosed as well as a two-dimensional grid pattern for collecting the positive ions on the cathode.

  16. Simple dynamic electromagnetic radiation detector

    NASA Technical Reports Server (NTRS)

    Been, J. F.

    1972-01-01

    Detector monitors gamma dose rate at particular position in a radiation facility where a mixed neutron-gamma environment exists, thus determining reactor power level changes. Device also maps gamma intensity profile across a neutron-gamma beam.

  17. Multiple-mode radiation detector

    SciTech Connect

    Claus, Liam D.; Derzon, Mark S.; Kay, Randolph R.; Bauer, Todd; Trotter, Douglas Chandler; Henry, Michael David

    2015-08-25

    An apparatus for detecting radiation is provided. In embodiments, at least one sensor medium is provided, of a kind that interacts with radiation to generate photons and/or charge carriers. The apparatus also includes at least one electrode arrangement configured to collect radiation-generated charge from a sensor medium that has been provided. The apparatus also includes at least one photodetector configured to produce an electrical output in response to photons generated by radiation in such a sensor medium, and an electronic circuit configured to produce an output that is jointly responsive to the collected charge and to the photodetector output. At least one such electrode arrangement, at least one such photodetector, and at least one such sensor medium are combined to form an integral unit.

  18. Capital investment in semiconductors: The lifeblood of the US semiconductor industry

    NASA Astrophysics Data System (ADS)

    Finan, William F.

    1990-09-01

    An analysis is given of four proposals designed to improve capital formation for U.S. industry in general, and the semiconductor industry in particular. The National Advisory Committee on Semiconductors recommendations were to make the current research and experimentation (R and E) tax credit more effective, to reduce taxes on capital gains, to increase personal savings incentives, and to improve semiconductor manufacturing equipment depreciation rules. The results of the qualitative analysis of the proposals as well as a description of the methodology employed are given.

  19. Technology Roadmaps for Compound Semiconductors

    PubMed Central

    Bennett, Herbert S.

    2000-01-01

    The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615

  20. SLM based semiconductor maskwriter

    NASA Astrophysics Data System (ADS)

    Diez, Steffen; Jehle, Achim

    2015-09-01

    The high-end semiconductor mask fabrication is dominated by e-beam technology. But still more than 50% of all semiconductor masks are produced by laser writers. The current laser writers are based on the same technology that was used 25 years ago. They are reliable and fast but not very economical. Heidelberg Instruments has developed a new economical and fast laser writer based on the latest technologies.

  1. Surface and defect correlation studies on high resistivity 4H SiC bulk crystals and epitaxial layers for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Muzykov, Peter G.; Krishna, Ramesh M.; Hayes, Timothy C.

    2011-09-01

    Radiation detectors have been fabricated using bulk semi-insulating (SI) 4H-SiC crystals and SI and n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) on highly doped (0001) 4H-SiC substrates. The devices have been characterized by optical microscopy, current-voltage (I-V) measurements, thermally stimulated current (TSC) spectroscopy (94K - 650 K), Hall effect, van der Pauw measurements, and electron beam induced current (EBIC) technique. Both epitaxial layers exhibited relatively shallow levels related to Al, B, L- and D- centers. Deep level centers in the n-type epitaxial layer peaked at ~ 400 K (Ea ~ 1.1 eV) and ~ 470 K were correlated with IL2 defect and 1.1 eV center in high purity bulk SI 4H-SiC. The SI epitaxial layer exhibited peak at ~ 290 K (Ea = 0.82 - 0.87 eV) that was attributed to IL1 center and 3C inclusions, and at ~ 525 K that was related to intrinsic defects and their complexes with energy levels close to the middle of the band gap. The TSC spectra of the SI epitaxial layer exhibited peaks with different current polarity which we attributed to the built-in electric field reversal. Results of EBIC and optical microscopy characterization showed segregation of threading dislocations around comet tail defects in the n-type epitaxial layers and presence of stacking faults and 3C-SiC inclusions in both epitaxial layers. The I-V characteristics of the devices on SI epi obtained in wide temperature range (94K - 650 K) exhibited steps at ~ 1 V and ~ 70 V corresponding to the ultimate trap filling of deep centers peaked at > 500 K and at ~ 250 K (Ea ~ 0.57 eV), & ~ 300 K (Ea ~ 0.85 eV) respectively. Slow processes of the injected carrier capture on traps resulted in the I-V characteristic with negative differential resistance (NDR). The high temperature resistivity measurements of bulk SI 4H-SiC sample revealed resistivity hysteresis that was attributed to the filling of the deep level electron trap centers.

  2. Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

    DOEpatents

    Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.

    2003-03-04

    A method, system and a radiation detector system for use therein are provided for determining the depth distribution of radiation-emitting material distributed in a source medium, such as a contaminated field, without the need to take samples, such as extensive soil samples, to determine the depth distribution. The system includes a portable detector assembly with an x-ray or gamma-ray detector having a detector axis for detecting the emitted radiation. The radiation may be naturally-emitted by the material, such as gamma-ray-emitting radionuclides, or emitted when the material is struck by other radiation. The assembly also includes a hollow collimator in which the detector is positioned. The collimator causes the emitted radiation to bend toward the detector as rays parallel to the detector axis of the detector. The collimator may be a hollow cylinder positioned so that its central axis is perpendicular to the upper surface of the large area source when positioned thereon. The collimator allows the detector to angularly sample the emitted radiation over many ranges of polar angles. This is done by forming the collimator as a single adjustable collimator or a set of collimator pieces having various possible configurations when connected together. In any one configuration, the collimator allows the detector to detect only the radiation emitted from a selected range of polar angles measured from the detector axis. Adjustment of the collimator or the detector therein enables the detector to detect radiation emitted from a different range of polar angles. The system further includes a signal processor for processing the signals from the detector wherein signals obtained from different ranges of polar angles are processed together to obtain a reconstruction of the radiation-emitting material as a function of depth, assuming, but not limited to, a spatially-uniform depth distribution of the material within each layer. The detector system includes detectors having

  3. Nanoscale Semiconductor Devices as New Biomaterials

    PubMed Central

    Zimmerman, John; Parameswaran, Ramya; Tian, Bozhi

    2016-01-01

    Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics studies with nanowire field effect transistor sensors. Third, we present the use of nanowire transistors as electrical recording devices that can be integrated into synthetic tissues and targeted intra- or extracellularly to study single cells. Lastly, we discuss future directions and challenges in further developing this area of research, which will advance biology and medicine. PMID:27213041

  4. Strained-bond semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1994-05-01

    Theories of strained-bond semiconductors and superconductors have been developed that promise to have significant impact on future electronic devices of interest to the Air Force. These include: (1) development of a theory of high-temperature superconductivity based on the idea of strained-layer superlattices, (2) elucidation of the physics of doping in Type-2 semiconductor superlattices, which is now central to the development of high-speed field-effect transistors, (3) a theory of dimerization and reconstruction on (001) semiconductor surfaces, (4) theory of Mobius transforms as applied to physics and remote sensing, (5) new understanding of how defects affect the vibrational properties of semiconductors, (6) new methods of efficiently computing the trajectories of atoms in semiconductors by a priori molecular dynamics, (7) elucidation of the criteria affecting quantum-well luminescence from Si, (8) models of the effects of vacancies in large-gap Al(x)Ga(1-x)N alloys, (9) physics of rare-earth-doped silicon, (10) models of Co adsorption to silicon surfaces, (11) theories of how defects affect the properties of large band-gap superlattices, and (12) models of the effects of electronic structure on the properties of semiconductors.

  5. FOREWORD: Focus on Superconductivity in Semiconductors Focus on Superconductivity in Semiconductors

    NASA Astrophysics Data System (ADS)

    Takano, Yoshihiko

    2008-12-01

    Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm-3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors. This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1). The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In2O3 (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  6. Developing New Nanoprobes from Semiconductor Nanocrystals

    SciTech Connect

    Fu, Aihua

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  7. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    SciTech Connect

    Lu, Hong; Burke, Peter G.; Gossard, Arthur C.; Zeng, Gehong; Ramu, Ashok T.; Bahk, Je-Hyeong; Bowers, John E.

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nano­structures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  8. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1979-01-01

    The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

  9. EDITORIAL: The 21st Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    2006-09-01

    This Topical Issue contains works presented at the 21st Nordic Semiconductor Meeting (21NSM) held at Sundvolden, Norway, 18-19 August 2005. The institutions supporting 21NSM were: University of Oslo, SINTEF, the Norwegian Defense Research Establishment and Vestfold University College. The Nordic Semiconductor Meeting has become an international forum that has been held every other year in a relay fashion in Denmark, Finland, Iceland, Norway and Sweden. The focus of the meeting has been on original research and science being carried out on semiconductor materials, devices and systems. Reports on industrial activity have usually been featured at the meetings. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. For the last five meetings the proceedings have been printed in a dedicated volume of Physica Scripta in the Topical Issue series. The papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the expected high standards of the series. The range of topics covered by this volume is broad, reflecting the call for papers; most of the papers have an element of materials science and the largest portion of these deal with other semiconductor materials other than silicon. The 21NSM was supported by the following sponsors: Renewable Energy Corporation (REC), EMF III-V Innovations (EMF), and the Nordic Research Board (NordForsk). Terje G Finstad Department of Physics, University of Oslo, Norway Andrej Y Kuznetsov and Bengt G Svensson Centre for Materials Science and Nanotechnology, University of Oslo, Norway

  10. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  11. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  12. Doped semiconductor nanoparticles synthesized in gas-phase plasmas

    NASA Astrophysics Data System (ADS)

    Pereira, R. N.; Almeida, A. J.

    2015-08-01

    Crystalline nanoparticles (NPs) of semiconductor materials have been attracting huge research interest due to their potential use in future applications like photovoltaics and bioimaging. The important role that intentional impurity doping plays in semiconductor technology has ignited a great deal of research effort aiming at synthesizing semiconductor NPs doped with foreign impurities and at understanding their physical and chemical properties. In this respect, plasma-grown semiconductor NPs doped in situ during synthesis have been key in studies of doped NPs. This article presents a review of the advances in understanding the properties of doped semiconductor NPs synthesized by means of plasma methods and the role played by these NPs for our current understanding of doped NPs and the general behavior of doping in nanoscale materials.

  13. Photoinduced superconductivity in semiconductors

    NASA Astrophysics Data System (ADS)

    Goldstein, Garry; Aron, Camille; Chamon, Claudio

    2015-02-01

    We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More realistically, we also show that superconductivity can be induced in a two-band semiconductor interacting with a broad-spectrum light source. We furthermore discuss the case of a three-band model in which the middle band replaces the broad-band reservoirs as the source of dissipation. In all three cases, we derive the simple conditions on the band structure, electron-electron interaction, and hybridization to the reservoirs that enable superconductivity. We compute the finite superconducting pairing and argue that the mechanism can be induced through both attractive and repulsive interactions and is robust to high temperatures.

  14. Biological Semiconductors | NCI Technology Transfer Center | TTC

    Cancer.gov

    The National Cancer Institute's Cancer Diagnostic Program and the Food and Drug Administration's Center for Devices and Radiological Health is seeking statements of capability or interest from parties interested in collaborative research to further develop, evaluate, or commercialize biological semiconductors as diagnostic sensors.

  15. Superconductivity in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Bustarret, E.

    2015-07-01

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  16. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  17. Semiconductor laser diode

    SciTech Connect

    Amann, M.C.

    1982-09-28

    A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

  18. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  19. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  20. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  1. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  2. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  3. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  4. Special Issue featuring invited articles arising from UK Semiconductors 2012

    NASA Astrophysics Data System (ADS)

    Clarke, Edmund; Wada, Osamu

    2013-07-01

    Semiconductor research has formed the basis of many technological advances over the past 50 years, and the field is still highly active, as new material systems and device concepts are developed to address new applications or operating conditions. In addition to the development of traditional semiconductor devices, the wealth of experience with these materials also allows their use as an ideal environment for testing new physics, leading to new classes of devices exploiting quantum mechanical effects that can also benefit from the advantages of existing semiconductor technology in scalability, compactness and ease of mass production. This special issue features papers arising from the UK Semiconductors 2012 Conference, held at the University of Sheffield. The annual conference covers all aspects of semiconductor research, from crystal growth, through investigations of the physics of semiconductor structures to realization of semiconductor devices and their application in emerging technologies. The 2012 conference featured over 150 presentations, including plenary sessions on interband cascade lasers for the 3-6 µm spectral band, efficient single photon sources based on InAs quantum dots embedded in GaAs photonic nanowires, nitride-based quantum dot visible lasers and single photon sources, and engineering of organic light-emitting diodes. The seven papers collected here highlight current research advances, taken from across the scope of the conference. The papers feature growth of novel nitride-antimonide material systems for mid-infrared sources and detectors, use of semiconductor nanostructures for charge-based memory and visible lasers, optimization of device structures either to reduce losses in solar cells or achieve low noise amplification in transistors, design considerations for surface-emitting lasers incorporating photonic crystals and an assessment of laser power convertors for power transfer. The editors of this special issue and the conference

  5. REDUCTION OF ARSENIC WASTES IN THE SEMICONDUCTOR INDUSTRY

    EPA Science Inventory

    The research described in this report was aimed at initiating and developing processes and process modifications that could be incorporated into semiconductor manufacturing operations to accomplish pollution prevention, especially to accomplish significant reduction in the quanti...

  6. Where the chips fall: environmental health in the semiconductor industry.

    PubMed Central

    Chepesiuk, R

    1999-01-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

  7. Semiconductor eutectic solar cell

    NASA Astrophysics Data System (ADS)

    Yue, A. S.; Yu, J. G.

    1986-12-01

    Two-phase semiconducting eutectics are potential device-materials. Of these, the SnSe-SnSe2 eutectic was chosen for studies in detail because it consists of multi-p/n-layers of SnSe and SnSe2 semiconductors. Since plasma frequency has not been detected in its infrared reflectance spectrum up to 40 micrometers of wavelength, it suggests that the SnSe-SnSe2 eutectic is a nondegenerate semiconductor. As-grown SnSe2 single crystals have hexagonal crystallographic structure and show n-type conductivity. Polycrystalline SnSe and SnSe2 films have been successfully prepared in vacuum using a close-space-vapor transport technique.

  8. Light amplification using semiconductors

    SciTech Connect

    Dupuis, R.D.

    1987-06-01

    During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

  9. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  10. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  11. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  12. Synchronous semiconductor memory device

    SciTech Connect

    Onno, C.; Hirata, M.

    1989-11-21

    This patent describes a synchronous semiconductor memory device. It comprises: first latch means for latching a write command in synchronism with clock signal; second latch means for latching a write data in synchronism with the clock signal and for outputting two write process signals based on the write data latched thereby; pulse generating means for generating an internal write pulse signal based on the write command latched by the first latch means. The internal write pulse signal having a semiconductor memory device; write control means supplied with the internal write pulse signal and the write process signals for controlling write and read operations of the synchronous semiconductor memory device; memory means for storing the write data latched by the second latch means; and noise preventing means coupled to the second latch means and the write control means for supplying the write process signals to the write control means only in the write mode responsive to the internal write pulse signal and for setting the write process signals to fixed potentials during a time other than the write mode.

  13. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials. PMID:23884341

  14. Semiconductor electrochemistry of coal pyrite

    SciTech Connect

    Osseo-Asare, K.

    1992-05-01

    This project seeks to advance the fundamental understanding of the physicochemical processes occurring at the pyrite/aqueous interface, in the context of coal cleaning, coal desulfurization, and acid mine drainage. A novel approach to the study of pyrite aqueous electrochemistry is proposed, based on the use of both synthetic and natural (i.e. coal-derived) pyrite specimens, the utilization of pyrite both in the form of micro (i.e. colloidal and subcolloidal) and macro (i.e. rotating ring disk)-electrodes, and the application of in-situ direct electroanalytical and spectroelectrochemical characterization techniques. Central to this research is the recognition that pyrite is a semiconductor material. (Photo)electrochemical experiments will be conducted to unravel the mechanisms of anodic and cathodic processes such as those associated with pyrite decomposition and the reduction of oxidants such as molecular oxygen and the ferric ion.

  15. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials.

  16. New organic semiconductors with imide/amide-containing molecular systems.

    PubMed

    Liu, Zitong; Zhang, Guanxin; Cai, Zhengxu; Chen, Xin; Luo, Hewei; Li, Yonghai; Wang, Jianguo; Zhang, Deqing

    2014-10-29

    Due to their high electron affinities, chemical and thermal stabilities, π-conjugated molecules with imide/amide frameworks have received considerable attentions as promising candidates for high-performance optoelectronic materials, particularly for organic semiconductors with high carrier mobilities. The purpose of this Research News is to give an overview of recent advances in development of high performance imide/amide based organic semiconductors for field-effect transistors. It covers naphthalene diimide-, perylene diimide- and amide-based conjugated molecules and polymers for organic semiconductors. PMID:24633804

  17. New organic semiconductors with imide/amide-containing molecular systems.

    PubMed

    Liu, Zitong; Zhang, Guanxin; Cai, Zhengxu; Chen, Xin; Luo, Hewei; Li, Yonghai; Wang, Jianguo; Zhang, Deqing

    2014-10-29

    Due to their high electron affinities, chemical and thermal stabilities, π-conjugated molecules with imide/amide frameworks have received considerable attentions as promising candidates for high-performance optoelectronic materials, particularly for organic semiconductors with high carrier mobilities. The purpose of this Research News is to give an overview of recent advances in development of high performance imide/amide based organic semiconductors for field-effect transistors. It covers naphthalene diimide-, perylene diimide- and amide-based conjugated molecules and polymers for organic semiconductors.

  18. Direct conversion semiconductor detectors in positron emission tomography

    NASA Astrophysics Data System (ADS)

    Cates, Joshua W.; Gu, Yi; Levin, Craig S.

    2015-05-01

    Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

  19. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  20. Integrated devices including cleaved semiconductor lasers

    SciTech Connect

    Chen, C.Y.

    1987-11-17

    A process for fabricating a semiconductor device is described comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.

  1. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  2. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  3. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  4. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  5. Deep levels in semiconductors

    NASA Astrophysics Data System (ADS)

    Watkins, George D.

    1983-03-01

    The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction with the lattice vacancy, into which the impurity is placed. This interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy.

  6. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  7. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2001-12-21

    Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

  8. Semiconductor nanorod liquid crystals

    SciTech Connect

    Li, Liang-shi; Walda, Joost; Manna, Liberato; Alivisatos, A. Paul

    2002-01-28

    Rodlike molecules form liquid crystalline phases with orientational order and positional disorder. The great majority of materials in which liquid crystalline phases have been observed are comprised of organic molecules or polymers, even though there has been continuing and growing interest in inorganic liquid crystals. Recent advances in the control of the sizes and shapes of inorganic nanocrystals allow for the formation of a broad class of new inorganic liquid crystals. Here we show the formation of liquid crystalline phases of CdSe semiconductor nanorods. These new liquid crystalline phases may have great importance for both application and fundamental study.

  9. Environmentally benign semiconductor processing for dielectric etch

    NASA Astrophysics Data System (ADS)

    Liao, Marci Yi-Ting

    Semiconductor processing requires intensive usage of chemicals, electricity, and water. Such intensive resource usage leaves a large impact on the environment. For instance, in Silicon Valley, the semiconductor industry is responsible for 80% of the hazardous waste sites contaminated enough to require government assistance. Research on environmentally benign semiconductor processing is needed to reduce the environmental impact of the semiconductor industry. The focus of this dissertation is on the environmental impact of one aspect of semiconductor processing: patterning of dielectric materials. Plasma etching of silicon dioxide emits perfluorocarbons (PFCs) gases, like C2F6 and CF4, into the atmosphere. These gases are super global warming/greenhouse gases because of their extremely long atmospheric lifetimes and excellent infrared absorption properties. We developed the first inductively coupled plasma (ICP) abatement device for destroying PFCs downstream of a plasma etcher. Destruction efficiencies of 99% and 94% can be obtained for the above mentioned PFCs, by using O 2 as an additive gas. Our results have lead to extensive modeling in academia as well as commercialization of the ICP abatement system. Dielectric patterning of hi-k materials for future device technology brings different environment challenges. The uncertainty of the hi-k material selection and the patterning method need to be addressed. We have evaluated the environmental impact of three different dielectric patterning methods (plasma etch, wet etch and chemical-mechanical polishing), as well as, the transistor device performances associated with the patterning methods. Plasma etching was found to be the most environmentally benign patterning method, which also gives the best device performance. However, the environmental concern for plasma etching is the possibility of cross-contamination from low volatility etch by-products. Therefore, mass transfer in a plasma etcher for a promising hi

  10. Papers arising from IAEA Coordinated Research Project "Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators" (F11016)

    NASA Astrophysics Data System (ADS)

    Vittone, Ettore; Breese, Mark; Simon, Aliz

    2016-04-01

    Within the International Atomic Energy Agency (IAEA) Department of Nuclear Sciences and Applications, activities are carried out to assist and advise IAEA Member States in assessing their needs for capacity building, research and development in nuclear sciences. Support is also provided to Member States' activities geared towards deriving benefits in fields such as (i) advanced materials for nuclear applications, (ii) application of accelerators and associated instrumentation, and (iii) nuclear, atomic and molecular data. One of the means that the IAEA uses to deliver its programme is Coordinated Research Projects (CRPs) which are very effective in stimulating international research and scientific interaction among the Member States.

  11. Initial stages of the development of semiconductor electronics in the Soviet union (60 years from the Invention of the Transistor)

    SciTech Connect

    Stafeev, V. I.

    2010-05-15

    The most important results of the early work of Soviet scientists in the research and development in the fields of semiconductors and semiconductor devices are reported, including results that are almost unknown now but played an important role in the development of semiconductor electronics in the Soviet Union.

  12. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  13. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  14. Aqueous Based Semiconductor Nanocrystals.

    PubMed

    Jing, Lihong; Kershaw, Stephen V; Li, Yilin; Huang, Xiaodan; Li, Yingying; Rogach, Andrey L; Gao, Mingyuan

    2016-09-28

    This review summarizes traditional and recent nonconventional, bioinspired, methods for the aqueous synthesis of colloidal semiconductor quantum dots (QDs). The basic chemistry concepts are critically emphasized at the very beginning as these are strongly correlated with the selection of ligands and the optimal formation of aqueous QDs and their more sophisticated structures. The synergies of biomimetic and biosynthetic methods that can combine biospecific reactivity with the robust and strong optical responses of QDs have also resulted in new approaches to the synthesis of the nanoparticles themselves. A related new avenue is the recent extension of QD synthesis to form nanoparticles endowed with chiral optical properties. The optical characteristics of QD materials and their advanced forms such as core/shell heterostructures, alloys, and doped QDs are discussed: from the design considerations of optical band gap tuning, the control and reduction of the impact of surface traps, the consideration of charge carrier processes that affect emission and energy and charge transfer, to the impact and influence of lattice strain. We also describe the considerable progress in some selected QD applications such as in bioimaging and theranostics. The review concludes with future strategies and identification of key challenges that still need to be resolved in reaching very attractive, scalable, yet versatile aqueous syntheses that may widen the scope of commercial applications for semiconductor nanocrystals. PMID:27586892

  15. Isotopically engineered semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1995-04-01

    Scientific interest, technological promise, and increased availability of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This review of mostly recent activities begins with an introduction to some past classical experiments which have been performed on isotopically controlled semiconductors. A review of the natural isotopic composition of the relevant elements follows. Some materials aspects resulting in part from the high costs of enriched isotopes are discussed next. Raman spectroscopy studies with a number of isotopically pure and deliberately mixed Ge bulk crystals show that the Brillouin-zone-center optical phonons are not localized. Their lifetime is almost independent of isotopic disorder, leading to homogeneous Raman line broadening. Studies with short period isotope superlattices consisting of alternating layers of n atomic planes of 70Ge and 74Ge reveal a host of zone-center phonons due to Brillouin-zone folding. At n≳40 one observes two phonon lines at frequencies corresponding to the bulk values of the two isotopes. In natural diamond, isotope scattering of the low-energy phonons, which are responsible for the thermal conductivity, is very strongly affected by small isotope disorder. Isotopically pure 12C diamond crystals exhibit thermal conductivities as high as 410 W cm-1 K-1 at 104 K, leading to projected values of over 2000 W cm-1 K-1 near 80 K. The changes in phonon properties with isotopic composition also weakly affect the electronic band structures and the lattice constants. The latter isotope dependence is most relevant for future standards of length based on crystal lattice constants. Capture of thermal neutrons by isotope nuclei followed by nuclear decay produces new elements, resulting in a very large number of possibilities for isotope selective doping of semiconductors. This neutron transmutation of isotope nuclei, already used

  16. Architectures for Improved Organic Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  17. Progress in semiconductor drift detectors

    SciTech Connect

    Rehak, P.; Walton, J.; Gatti, E.; Longoni, A.; Sanpietro, M.; Kemmer, J.; Dietl, H.; Holl, P.; Klanner, R.; Lutz, G.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements.

  18. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  19. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  20. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  1. Stripline mount for semiconductor lasers

    SciTech Connect

    Dietrich, N.R.; Holbrook, W.R.; Johnson, A.F. Jr.; Zacharias, A.

    1988-08-02

    An arrangement for coupling a semiconductor optical device to a signal source, is described, the arrangement comprising a stripline transmission path having a predetermined characteristic impedance Z/sub 0/; and resistance means connected in series with the stripline transmission path, chosen to provide impedance matching between the stripline transmission path and an associated semiconductor optical device.

  2. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    NASA Astrophysics Data System (ADS)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  3. Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter.

    PubMed

    Soubra, M; Cygler, J; Mackay, G

    1994-04-01

    A new type of direct reading semiconductor dosimeter has been investigated as a radiation detector for photon and electron therapy beams of various energies. The operation of this device is based on the measurement of the threshold voltage shift in a custom-built metal oxide-silicon semiconductor field effect transistor (MOSFET). This voltage is a linear function of absorbed dose. The extent of the linearity region is dependent on the voltage controlled operation during irradiation. Operating two MOSFETS at two different biases simultaneously during irradiation will result in sensitivity (V/Gy) reproducibility better than +/- 3% over a range in dose of 100 Gy and at a dose per fraction greater than 20 x 10(-2) Gy. The modes of operation give this device many advantages, such as continuous monitoring during irradiation, immediate reading, and permanent storage of total dose after irradiation. The availability and ease of use of these MOSFET detectors make them very promising in clinical dosimetry. PMID:8058024

  4. Optimizing biased semiconductor superlattices for terahertz amplification

    SciTech Connect

    Lei, Xiaoli; Wang, Dawei; Wu, Zhaoxin; Dignam, M. M.

    2014-08-11

    Over the past 15 yr or more, researchers have been trying to achieve gain for electromagnetic fields in the terahertz frequency region using biased semiconductor superlattices, but with little success. In this work, we employ our model of the excitonic states in biased GaAs/Al{sub 0.3}Ga{sub 0.7}As semiconductor superlattices to find the optimal structures for amplification of terahertz radiation. In particular, we determine the optimum well width, barrier width, and bias field for terahertz fields with frequencies ranging from 1 to 4 terahertz. We find that gain coefficients on the order of 40 cm{sup −1} should be achievable over most of this frequency range.

  5. Semiconductor quantum dot-sensitized solar cells.

    PubMed

    Tian, Jianjun; Cao, Guozhong

    2013-10-31

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  6. Semiconductor quantum dot-sensitized solar cells

    PubMed Central

    Tian, Jianjun; Cao, Guozhong

    2013-01-01

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178

  7. Semiconductors: A pillar of pure and applied physics

    NASA Astrophysics Data System (ADS)

    Chelikowsky, James R.; Cohen, Marvin L.

    2015-03-01

    We give an overview of the central role semiconductor research that has played in basic, applied, and computational science. Our focus is on basic science. However, we will make general comments about applications, such as the transistor, integrated circuits, solar devices, and lasers, which evolved from basic research, and about simulations using computational science, which has enormously benefited from semiconductor research. We will make reference to links with other branches of physics and more generally other areas of science and fields like electrical engineering, computer science, material science, medical science, and chemistry that have made significant contributions to our everyday life.

  8. Diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Anderson, James R.

    1990-03-01

    Growth and physical properties of diluted magnetic semiconductors (DMS) were investigated. Growth included Bridgman, solid state recrystallization, and liquid phase epitaxy of Mercury(1-x)Manganese(x)Telluride and Mercury(1-x-y)Manganese(x)Cadmium(y)Telluride. Very uniform crystals were produced by solid state recrystallization. Physical properties studied included magnetization, optical response, and magnetotransport. From magnetization, the exchange interactions among magnetic ions have been deduced. Modulated spectroscopy gave details of the electronic structure of DMS and the quality of the material was indicated by the line widths. Magnetotransport, carried out in some cases to 30 T, showed a large negative magnetoresistance and subsequent increase. The Hg(1-x-y)Mn(x)Cd(y)Te has considerable promise for avalanche photodiodes between 1.2 and 1.8 micrometers.

  9. Engineering the cell-semiconductor interface: a materials modification approach using II-VI and III-V semiconductor materials.

    PubMed

    Bain, Lauren E; Ivanisevic, Albena

    2015-02-18

    Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material-biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell-material interactions. Initially, the review discusses experiments involving unmodified II-VI and III-V semiconductors - a starting point for assessing cytotoxicity and biocompatibility - followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell-semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.

  10. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  11. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  12. State of the art in semiconductor detectors

    SciTech Connect

    Rehak, P. ); Gatti, E. )

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs.

  13. Photoelectrochemistry of Semiconductor Nanowire Arrays

    SciTech Connect

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  14. Photoemission studies of semiconductor nanocrystals

    SciTech Connect

    Hamad, K. S.; Roth, R.; Alivisatos, A. P.

    1997-04-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface.

  15. Spin Transport in Semiconductor heterostructures

    SciTech Connect

    Domnita Catalina Marinescu

    2011-02-22

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  16. Response measurement of single-crystal chemical vapor deposition diamond radiation detector for intense X-rays aiming at neutron bang-time and neutron burn-history measurement on an inertial confinement fusion with fast ignition.

    PubMed

    Shimaoka, T; Kaneko, J H; Arikawa, Y; Isobe, M; Sato, Y; Tsubota, M; Nagai, T; Kojima, S; Abe, Y; Sakata, S; Fujioka, S; Nakai, M; Shiraga, H; Azechi, H; Chayahara, A; Umezawa, H; Shikata, S

    2015-05-01

    A neutron bang time and burn history monitor in inertial confinement fusion with fast ignition are necessary for plasma diagnostics. In the FIREX project, however, no detector attained those capabilities because high-intensity X-rays accompanied fast electrons used for plasma heating. To solve this problem, single-crystal CVD diamond was grown and fabricated into a radiation detector. The detector, which had excellent charge transportation property, was tested to obtain a response function for intense X-rays. The applicability for neutron bang time and burn history monitor was verified experimentally. Charge collection efficiency of 99.5% ± 0.8% and 97.1% ± 1.4% for holes and electrons were obtained using 5.486 MeV alpha particles. The drift velocity at electric field which saturates charge collection efficiency was 1.1 ± 0.4 × 10(7) cm/s and 1.0 ± 0.3 × 10(7) cm/s for holes and electrons. Fast response of several ns pulse width for intense X-ray was obtained at the GEKKO XII experiment, which is sufficiently fast for ToF measurements to obtain a neutron signal separately from X-rays. Based on these results, we confirmed that the single-crystal CVD diamond detector obtained neutron signal with good S/N under ion temperature 0.5-1 keV and neutron yield of more than 10(9) neutrons/shot.

  17. Response measurement of single-crystal chemical vapor deposition diamond radiation detector for intense X-rays aiming at neutron bang-time and neutron burn-history measurement on an inertial confinement fusion with fast ignition

    SciTech Connect

    Shimaoka, T. Kaneko, J. H.; Tsubota, M.; Arikawa, Y.; Nagai, T.; Kojima, S.; Abe, Y.; Sakata, S.; Fujioka, S.; Nakai, M.; Shiraga, H.; Azechi, H.; Isobe, M.; Sato, Y.; Chayahara, A.; Umezawa, H.; Shikata, S.

    2015-05-15

    A neutron bang time and burn history monitor in inertial confinement fusion with fast ignition are necessary for plasma diagnostics. In the FIREX project, however, no detector attained those capabilities because high-intensity X-rays accompanied fast electrons used for plasma heating. To solve this problem, single-crystal CVD diamond was grown and fabricated into a radiation detector. The detector, which had excellent charge transportation property, was tested to obtain a response function for intense X-rays. The applicability for neutron bang time and burn history monitor was verified experimentally. Charge collection efficiency of 99.5% ± 0.8% and 97.1% ± 1.4% for holes and electrons were obtained using 5.486 MeV alpha particles. The drift velocity at electric field which saturates charge collection efficiency was 1.1 ± 0.4 × 10{sup 7} cm/s and 1.0 ± 0.3 × 10{sup 7} cm/s for holes and electrons. Fast response of several ns pulse width for intense X-ray was obtained at the GEKKO XII experiment, which is sufficiently fast for ToF measurements to obtain a neutron signal separately from X-rays. Based on these results, we confirmed that the single-crystal CVD diamond detector obtained neutron signal with good S/N under ion temperature 0.5–1 keV and neutron yield of more than 10{sup 9} neutrons/shot.

  18. Semiconductor plasmonic nanolasers: current status and perspectives

    NASA Astrophysics Data System (ADS)

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core–shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier.

  19. Semiconductor plasmonic nanolasers: current status and perspectives.

    PubMed

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core-shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier. PMID:27459210

  20. Semiconductor plasmonic nanolasers: current status and perspectives

    NASA Astrophysics Data System (ADS)

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core-shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier.

  1. Signal processing for semiconductor detectors

    SciTech Connect

    Goulding, F.S.; Landis, D.A.

    1982-02-01

    A balanced perspective is provided on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed.

  2. Artificial atoms on semiconductor surfaces

    PubMed Central

    Tisdale, W. A.; Zhu, X.-Y.

    2011-01-01

    Semiconductor nanocrystals are called artificial atoms because of their atom-like discrete electronic structure resulting from quantum confinement. Artificial atoms can also be assembled into artificial molecules or solids, thus, extending the toolbox for material design. We address the interaction of artificial atoms with bulk semiconductor surfaces. These interfaces are model systems for understanding the coupling between localized and delocalized electronic structures. In many perceived applications, such as nanoelectronics, optoelectronics, and solar energy conversion, interfacing semiconductor nanocrystals to bulk materials is a key ingredient. Here, we apply the well established theories of chemisorption and interfacial electron transfer as conceptual frameworks for understanding the adsorption of semiconductor nanocrystals on surfaces, paying particular attention to instances when the nonadiabatic Marcus picture breaks down. We illustrate these issues using recent examples from our laboratory. PMID:21097704

  3. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  4. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  5. Medical applications of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Mancha, Sylvia D.; Keipert, Andreas; Prairie, Michael W.

    1994-06-01

    The High Power Semiconductor Laser Technology (HPSLT) program is currently developing, in-house, a belt pack medical laser. This compact semiconductor laser device provides the field paramedic or physician a unique portable laser capability. The pack consists of a completely self-contained laser system that fits inside a belt pack. Several other medical applications being investigated by the HPSLT program include urological applications, photodynamic therapy, and ophthalmic applications.

  6. Dye Sensitization of Semiconductor Particles

    SciTech Connect

    Hartland, G. V.

    2003-01-13

    In this project electron transfer at semiconductor liquid interfaces was examined by ultrafast time-resolved and steady-state optical techniques. The experiments primarily yielded information about the electron transfer from titanium dioxide semiconductor particles to absorbed molecules. The results show that the rate of electron transfer depends on the structure of the molecule, and the crystalline phase of the particle. These results can be qualitatively explained by Marcus theory for electron transfer.

  7. Semiconductor crystal high resolution imager

    NASA Technical Reports Server (NTRS)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  8. Research on defects and transport in amorphous-silicon-based semiconductors. Final subcontract report, 20 February 1991--19 April 1994

    SciTech Connect

    Schiff, E.A.; Antoniadis, H.; Gu, Q.; Lee, J.K.; Wang, Q.; Zafar, S.

    1994-09-01

    This report describes work on three individual tasks as follows. (1) Electron and hole drift measurements in a-Si{sub 1-x}Ge{sub x}:H and a-Si{sub 1-x}C{sub x}:H p-i-n solar cells. Multijunction solar cells incorporating modified band gap a-Si:H in a triple-junction structure are generally viewed as the most promising avenue for achieving an amorphous silicon-based solar call with 15% stabilized conversion efficiency. The specific objective of this task was to document the mobilities and deep-trapping mobility-lifetime products for electrons and holes in a-Si{sub 1-x}Ge{sub x}:H and a-Si{sub 1-x}C{sub x}:H alloys materials. (2) Electroabsorption measurements and built-in potential (V{sub bi}) in solar cells. V{sub bi} in a p-i-n solar call may be limiting the open-circuit voltage (V{sub oc}) in wide-band-gap cells (E{sub g} > 1.8 eV) currently under investigation as the top cell for 15% triple junction devices. The research addressed four issues that need to be resolved before the method can yield an error less than 0.1 V for V{sub bi}. The details are presented in this report. (3) Defect relaxation and Shockley-Read kinetics in a-Si:H. Quantitative modeling of solar cells is usually based on Shockley-Read kinetics.`` An important assumption of this approach is that the rate of emission of a photocarrier trapped on a defect is independent of quasi-Fermi level location.

  9. Simulating nanoscale semiconductor devices.

    SciTech Connect

    Salinger, Andrew Gerhard; Zhao, P.; Woolard, D. L.; Kelley, C. Tim; Lasater, Matthew S.

    2005-03-01

    The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

  10. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  11. Microfabrication techniques for semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Tamanuki, Takemasa; Tadokoro, T.; Morito, Ken; Koyama, Fumio; Iga, Kenichi

    1991-03-01

    Several important techniques for fabricating micro-cavity semiconductor lasers including surface emitting lasers have been developed. Reactive ion beam etch (RIBE) for GaA1As and GaInAsP is employed and its condition for vertical fine etch under low damages and removal of residual damages are made clear. Passivation by sulfur is introduced to the fabrication process. Regrowth techniques for DII structures by LPE and MOCVD has been established. Some device applications are discussed. 1. MICRO-ETCHING PROCESS Micro-cavity lasers including a vertical cavity surface emitting laser1 are attracting the research interest for optical parallel processing and parallel light wave systems. In order to realize micron-order or sub-micron laserdevices the technology of micro-fabrication must be established. In this study the total fabrication technology has been almost completed. First fine and low damage etching condition by ultrahigh vacuum background RIBE using a Cl2 gas has been made clear. We have found an isotropic etching condition for the vertical side wall formation and good mask traceability i. e. the acceleration voltage is 500 V and substrate temperature is 150 C with a 5000A thickness Si02 mask. Residual damages induced on the surface and the side wall are characterized by photo-luminescence and making stripe lasers. Figure 1 is the histogram of the nominal threshold current density for (a) oxide-defined stripe lasers (b) RIBE etched and LPE regrown BH-lasers using an LPE grown DII wafer (LPE/LPE) and (c) RIBE etched

  12. Closing photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Hjalmarson, H.P.; O'Malley, M.W.

    1989-01-01

    One of the most important limitations of Photoconductive Semiconductor Switches (PCSS) for pulsed power applications is the high laser powers required to activate the switches. In this paper, we discuss recent developments on two different aspects of GaAs PCSS that result in reductions in laser power by a factor of nearly 1000. The advantages of using GaAs over Si are many. First of all, the resistivity of GaAs can be orders of magnitude higher than that of the highest resistivity Si material, thus allowing GaAs switches to withstand dc voltages without thermal runaway. Secondly, GaAs has a higher carrier mobility than Si and, thus, is more efficient (per carrier). Finally, GaAs switches can have naturally fast (ns) opening times at room temperature and low fields, microsecond opening times at liquid nitrogen temperature of 77 K, or, on demand, closing and opening at high fields and room temperature by a mechanism called lock-on (see Ref. 1). By contrast, Si switches typically opening times of milliseconds. The amount of laser light required to trigger GaAs for lock-on, or at 77 K, is about three orders of magnitude lower than at room temperature. In this paper we describe the study of lock-on in GaAs and InP, as well as switching of GaAs at 77 K. We shall show that when GaAs is switched at 77 K, the carrier lifetime is about three orders of magnitude longer than it is at room temperature. We shall explain the change in lifetime in terms of the change in electron capture cross section of the deep levels in GaAs (these are defect or impurity levels in the band gap). In the second section, we describe the lock-on effect, now seen in GaAs and InP, and at fields as high as 70 kV/cm. We show how lock-on can be tailored by changing the GaAs temperature or by neutron bombardment. In the third section, we discuss possible lock-on mechanisms. 5 refs., 5 figs.

  13. Key techniques for space-based solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  14. High mobility emissive organic semiconductor

    PubMed Central

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  15. High mobility emissive organic semiconductor

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-12-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V-1 s-1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m-2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  16. High mobility emissive organic semiconductor.

    PubMed

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm(2) V(-1) s(-1). Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m(-2) and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  17. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  18. Semiconductor Chemical Reactor Engineering and Photovoltaic Unit Operations.

    ERIC Educational Resources Information Center

    Russell, T. W. F.

    1985-01-01

    Discusses the nature of semiconductor chemical reactor engineering, illustrating the application of this engineering with research in physical vapor deposition of cadmium sulfide at both the laboratory and unit operations scale and chemical vapor deposition of amorphous silicon at the laboratory scale. (JN)

  19. Technician Training for the Semiconductor Microdevices Industry. Final Report.

    ERIC Educational Resources Information Center

    Center for Occupational Research and Development, Inc., Waco, TX.

    The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of…

  20. A brief history of ... semiconductors

    NASA Astrophysics Data System (ADS)

    Jenkins, Tudor

    2005-09-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival of this successful quantum theory of solids, together with a concentration on the growth of pure silicon and germanium and an understanding of their properties, saw an explosion in activity in semiconductor studies that has continued to this day.

  1. Wide band gap semiconductor templates

    DOEpatents

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  2. The processing of semiconductor materials

    NASA Technical Reports Server (NTRS)

    1979-01-01

    Five experiments involving the processing of semiconductor materials were performed during the Skylab mission. After discussions on semiconductors and their unique electronic properties, and techniques of crystal growth, these five experiments are presented. Four melt growth experiments were attempted: (1) steady state growth and segregation under zero gravity (InSb); (2) seeded, containerless solidification of InSb; (3) influence of gravity-free solidification on microsegregation; and (4) directional solidification of InSb-GaSb alloys. One vapor growth experiment, crystal growth by vapor transport, was attempted.

  3. Superconducting qubits with semiconductor nanowire Josephson junctions

    NASA Astrophysics Data System (ADS)

    Petersson, K. D.; Larsen, T. W.; Kuemmeth, F.; Jespersen, T. S.; Krogstrup, P.; Nygård, J.; Marcus, C. M.

    2015-03-01

    Superconducting transmon qubits are a promising basis for a scalable quantum information processor. The recent development of semiconducting InAs nanowires with in situ molecular beam epitaxy-grown Al contacts presents new possibilities for building hybrid superconductor/semiconductor devices using precise bottom up fabrication techniques. Here, we take advantage of these high quality materials to develop superconducting qubits with superconductor-normal-superconductor Josephson junctions (JJs) where the normal element is an InAs semiconductor nanowire. We have fabricated transmon qubits in which the conventional Al-Al2O3-Al JJs are replaced by a single gate-tunable nanowire JJ. Using spectroscopy to probe the qubit we observe fluctuations in its level splitting with gate voltage that are consistent with universal conductance fluctuations in the nanowire's normal state conductance. Our gate-tunable nanowire transmons may enable new means of control for large scale qubit architectures and hybrid topological quantum computing schemes. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation and the European Commission.

  4. Method of preparing nitrogen containing semiconductor material

    DOEpatents

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  5. Method and structure for passivating semiconductor material

    DOEpatents

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  6. Semiconductor Reliability--Another Field for Physicists.

    ERIC Educational Resources Information Center

    Derman, Samuel; Anderson, Wallace T.

    1994-01-01

    Stresses that an important industrial area is product reliability, especially for semiconductors. Suggests that physics students would benefit from training in semiconductors: the many modes of failure, radiation effects, and electrical contact problems. (MVL)

  7. Probing specific DNA sequences with luminescent semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Taylor, Jason R.; Nie, Shuming

    2001-06-01

    The development of new fluorescent probes has impacted many areas of research such as medical diagnostics, high-speed drug screening, and basic molecular biology. Main limitations to traditional organic fluorophores are their relatively weak intensities, short life times (eg., photobleaching), and broad emission spectra. The desire for more intense fluorescent probes with higher quality photostability and narrow emission wavelengths has led to the development and utilization of semiconductor quantum dots as a new label. In this work, we have modified semicondutor quantum dots (QD's) with synthetic oligonucleotides to probe a specific DNA target sequence both in solution as well as immobilized on a solid substrate. In the first approach, specific target sequences are detected in solution by using short oligonucleotide probes, which are covalently linked to semiconductor quantum dots. In the second approach, DNA target sequences are covalently attached to a glass substrate and detected using oligonucleotides linked to semiconductor quantum dots.

  8. Exciton absorption of entangled photons in semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

    2013-03-01

    The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

  9. Metal/Semiconductor hybrid nanostructures for plasmon-enhanced applications.

    PubMed

    Jiang, Ruibin; Li, Benxia; Fang, Caihong; Wang, Jianfang

    2014-08-20

    Hybrid nanostructures composed of semiconductor and plasmonic metal components are receiving extensive attention. They display extraordinary optical characteristics that are derived from the simultaneous existence and close conjunction of localized surface plasmon resonance and semiconduction, as well as the synergistic interactions between the two components. They have been widely studied for photocatalysis, plasmon-enhanced spectroscopy, biotechnology, and solar cells. In this review, the developments in the field of (plasmonic metal)/semiconductor hybrid nanostructures are comprehensively described. The preparation of the hybrid nanostructures is first presented according to the semiconductor type, as well as the nanostructure morphology. The plasmonic properties and the enabled applications of the hybrid nanostructures are then elucidated. Lastly, possible future research in this burgeoning field is discussed.

  10. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  11. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  12. Two-dimensional position sensitive radiation detectors

    DOEpatents

    Mihalczo, John T.

    1994-01-01

    Nuclear reaction detectors capable of position sensitivity with submillimeter resolution in two dimensions are each provided by placing arrays of scintillation or wave length shifting optical fibers formed of a plurality of such optical fibers in a side-by-side relationship in X and Y directions with a layer of nuclear reactive material operatively associated with surface regions of the optical fiber arrays. Each nuclear reaction occurring in the layer of nuclear reactive material produces energetic particles for simultaneously providing a light pulse in a single optical fiber in the X oriented array and in a single optical fiber in the Y oriented array. These pulses of light are transmitted to a signal producing circuit for providing signals indicative of the X-Y coordinates of each nuclear event.

  13. Two-dimensional position sensitive radiation detectors

    DOEpatents

    Mihalczo, J.T.

    1994-02-22

    Nuclear reaction detectors capable of position sensitivity with submillimeter resolution in two dimensions are each provided by placing arrays of scintillation or wavelength shifting optical fibers formed of a plurality of such optical fibers in a side-by-side relationship in X and Y directions with a layer of nuclear reactive material operatively associated with surface regions of the optical fiber arrays. Each nuclear reaction occurring in the layer of nuclear reactive material produces energetic particles for simultaneously providing a light pulse in a single optical fiber in the X oriented array and in a single optical fiber in the Y oriented array. These pulses of light are transmitted to a signal producing circuit for providing signals indicative of the X-Y coordinates of each nuclear event. 6 figures.

  14. Three-axis asymmetric radiation detector system

    DOEpatents

    Martini, Mario Pierangelo; Gedcke, Dale A.; Raudorf, Thomas W.; Sangsingkeow, Pat

    2000-01-01

    A three-axis radiation detection system whose inner and outer electrodes are shaped and positioned so that the shortest path between any point on the inner electrode and the outer electrode is a different length whereby the rise time of a pulse derived from a detected radiation event can uniquely define the azimuthal and radial position of that event, and the outer electrode is divided into a plurality of segments in the longitudinal axial direction for locating the axial location of a radiation detection event occurring in the diode.

  15. Dual amplitude pulse generator for radiation detectors

    DOEpatents

    Hoggan, Jerry M.; Kynaston, Ronnie L.; Johnson, Larry O.

    2001-01-01

    A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

  16. Enhanced radiation detectors using luminescent materials

    DOEpatents

    Vardeny, Zeev V.; Jeglinski, Stefan A.; Lane, Paul A.

    2001-01-01

    A radiation detecting device comprising a radiation sensing element, and a layer of luminescent material to expand the range of wavelengths over which the sensing element can efficiently detect radiation. The luminescent material being selected to absorb radiation at selected wavelengths, causing the luminescent material to luminesce, and the luminescent radiation being detected by the sensing element. Radiation sensing elements include photodiodes (singly and in arrays), CCD arrays, IR detectors and photomultiplier tubes. Luminescent materials include polymers, oligomers, copolymers and porphyrines, Luminescent layers include thin films, thicker layers, and liquid polymers.

  17. Space Radiation Detector with Spherical Geometry

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

    2011-01-01

    A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

  18. Space Radiation Detector with Spherical Geometry

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

    2012-01-01

    A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

  19. Window for radiation detectors and the like

    DOEpatents

    Sparks, C.J. Jr.; Ogle, J.C.

    1975-10-28

    An improved x- and gamma-radiation and particle transparent window for the environment-controlling enclosure of various types of radiation and particle detectors is provided by a special graphite foil of a thickness of from about 0.1 to 1 mil. The graphite must have very parallel hexagonal planes with a mosaic spread no greater than 5$sup 0$ to have the necessary strength in thin sections to support one atmosphere or more of pressure. Such graphite is formed by hot- pressing and annealing pyrolytically deposited graphite and thereafter stripping off layers of sufficient thickness to form the window.

  20. Nano structural anodes for radiation detectors

    DOEpatents

    Cordaro, Joseph V.; Serkiz, Steven M.; McWhorter, Christopher S.; Sexton, Lindsay T.; Retterer, Scott T.

    2015-07-07

    Anodes for proportional radiation counters and a process of making the anodes is provided. The nano-sized anodes when present within an anode array provide: significantly higher detection efficiencies due to the inherently higher electric field, are amenable to miniaturization, have low power requirements, and exhibit a small electromagnetic field signal. The nano-sized anodes with the incorporation of neutron absorbing elements (e.g., .sup.10B) allow the use of neutron detectors that do not use .sup.3He.

  1. Position sensitivity in gallium arsenide radiation detectors

    SciTech Connect

    Harper, R.; Hilko, R.A.

    1994-12-31

    For several years, the authors have studied the electrical output of GaAs detectors in response to MeV protons. Beams from the Los Alamos National Laboratory`s tandem Van de Graaff, bunched into pulses of about 0.7-ns width, have been used to drive detectors into the current mode, and fast electronics have enabled characterization of the impulse response shapes and the absolute sensitivities. Recently, the authors extended this line of investigation to measure output-charge spectra in response to low-current beams, in which the count rate was low and pulses due to individual ionizing particles were analyzed. The first part of the work was the measurement of spectra of the output charge of the detectors when bombarded by a beam of MeV-energy protons, which was collimated to a diameter of 0.1 mm. The GaAs detector was mounted on a microadjustable stage just behind the collimator, so that the site of irradiation on the detector could be varied. Output pulses originating from the impacts of individual protons were preamplified with charge-sensitive Lecroy 2004 preamplifiers, shaped with Lecroy 2011 amplifiers, and analyzed with a Lecroy 3500 multichannel analyzer. The second part was the measurement of the time response of the detector to a 0.1 mm-collimated bunched proton beam. The proton bunch width was less than 1 ns, during which time many protons struck the detector, driving it into the current mode where individual proton impacts are unresolved. A possible detector design is suggested by the results. In the past, GaAs time response has been improved by doping or radiation damaging, which introduces traps. The tails can be eliminated, but at the cost of a factor of a thousand in main peak sensitivity. It now appears that by masking off the region of the detector near the negative electrode, the tails can be eliminated with only a factor of about ten loss in peak gain.

  2. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  3. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, A.J.

    1985-02-19

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  4. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  5. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  6. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  7. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  8. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  9. Semiconductor films on flexible iridium substrates

    DOEpatents

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  10. A Brief History of ... Semiconductors

    ERIC Educational Resources Information Center

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  11. Hydroplane polishing of semiconductor crystals

    NASA Astrophysics Data System (ADS)

    Gormley, J. V.; Manfra, M. J.; Calawa, A. R.

    1981-08-01

    A new technique for obtaining optically flat, damage-free surfaces on semiconductor crystals has been developed. The polishing is very fast, being capable of removing over 30 μm of materials per minute in the case of GaAs and InP. Initial results indicate that the technique can also be used in the polishing of HgCdTe.

  12. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  13. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, P.T.

    1985-03-05

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  14. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, Peter T.

    1985-01-01

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  15. Semiconductor ac static power switch

    NASA Technical Reports Server (NTRS)

    Vrancik, J.

    1968-01-01

    Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.

  16. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  17. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  18. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  19. High-speed semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sze, S. M.

    An introduction to the physical principles and operational characteristics of high-speed semiconductor devices is presented. Consideration is given to materials and technologies for high-speed devices, device building blocks, the submicron MOSFET, homogeneous field-effect transistors, and heterostructure field-effect transistors. Also considered are quantum-effect devices, microwave diodes, and high-speed photonic devices.

  20. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  1. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  2. Semiconductor Nanowires: What's Next?

    SciTech Connect

    Yang, Peidong; Yan, Ruoxue; Fardy, Melissa

    2010-04-28

    In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.

  3. Silicon carbide, an emerging high temperature semiconductor

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.; Powell, J. Anthony

    1991-01-01

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  4. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  5. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  6. The stand for research and testing of layout of ultraviolet photo-polarimeter (UPP)

    NASA Astrophysics Data System (ADS)

    Sorochynskyi, R. R.; Nevodovskyi, P. V.; Vidmachenko, A. P.; Herayimchuk, M. D.; Ivakhiv, O. V.

    2016-05-01

    For debugging, research and testing as a model of UPP in the complex and its individual parts we created a special stand with a complex set of equipment. The stand consists of: radiation block with variable sources of radiation; detector block with a set of measuring equipment; block of registration and analysis of radiation polarization; block with a set of different power supplies; block of variable high voltage. To use this stand we have also developed the corresponding software and more

  7. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  8. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1986-01-01

    During the past half-year, the research effort centered on further investigating both the new superlattice photomultiplier with tunneling-assisted impact ionization and the photodetector based on the real space transfer mechanism. A brief outline of the current status of these projects is presented. Detailed analyses are included in Appendices A and B. New results of the tunneling-assisted impact ionization are presented.

  9. Thermal Conductivities of Crystalline Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brill, Joseph

    2014-03-01

    As applications for organic semiconductors grow, it is becoming increasingly important to know their thermal conductivities, k. For example, for sub-micron electronic devices, values of k>k0 ~ 5 mW/cm/K are needed, while values ksemiconductors using frequency[2] and position dependent[3] ac-calorimetry; the thermal conductivities are then determined from the specific heats measured with differential scanning calorimetry. For rubrene, which has kResearch done with Hao Zhang and Yulong Yao and supported by NSF grants DMR-0800367, EPS-0814194, and DMR-1262261.

  10. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

    2014-11-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

  11. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts.

    PubMed

    Wu, Wei; Changzhong Jiang; Roy, Vellaisamy A L

    2015-01-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed. PMID:25406760

  12. Assessing the benefits of OHER (Office of Health and Environmental Research) research: Three case studies

    SciTech Connect

    Nesse, R.J.; Callaway, J.M.; Englin, J.E.; Klan, M.S.; Nicholls, A.K.; Serot, D.E.

    1987-09-01

    This research was undertaken to estimate the societal benefits and costs of selected past research performed for the Office of Health and Environmental Research (OHER) of the US Department of Energy (DOE). Three case studies of representative OHER and DOE research were performed. One of these, the acid rain case study, includes research conducted elsewhere in DOE. The other two cases were the OHER marine research program and the development of high-purity germanium that is used in radiation detectors. The acid rain case study looked at the research benefits and costs of furnace sorbent injection and duct injection, technologies that might reduce acid deposition precursors. Both appear to show benefits in excess of costs. We examined in detail one of the OHER marine research program's accomplishments - the increase in environmental information used by the Outer Continental Shelf leasing program to manage bidding for off-shore oil drilling. The results of an econometric model show that environmental information of the type supported by OHER is unequivocally linked to government and industry leasing decisions. The germanium case study indicated that the benefits of germanium radiation detectors were significant.

  13. Semiconductor detectors in nuclear and particle physics

    SciTech Connect

    Rehak, P.; Gatti, E.

    1992-12-31

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported.

  14. Back-side readout semiconductor photomultiplier

    DOEpatents

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  15. A Thermal and Electrical Analysis of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Vafai, Kambiz

    1997-01-01

    The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

  16. Bacteria inside semiconductors as potential sensor elements: biochip progress.

    PubMed

    Sah, Vasu R; Baier, Robert E

    2014-01-01

    It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

  17. Bacteria inside semiconductors as potential sensor elements: biochip progress.

    PubMed

    Sah, Vasu R; Baier, Robert E

    2014-01-01

    It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips. PMID:24961215

  18. Simulation of Semiconductor Nanostructures

    SciTech Connect

    Williamson, A J; Grossman, J C; Puzder, A; Benedict, L X; Galli, G

    2001-07-19

    The field of research into the optical properties of silicon nanostructures has seen enormous growth over the last decade. The discovery that silicon nanoparticles exhibit visible photoluminescence (PL) has led to new insights into the mechanisms responsible for such phenomena. The importance of understanding and controlling the PL properties of any silicon based material is of paramount interest to the optoelectronics industry where silicon nanoclusters could be embedded into existing silicon based circuitry. In this talk, we present a combination of quantum Monte Carlo and density functional approaches to the calculation of the electronic, structural, and optical properties of silicon nanostructures.

  19. Glass-clad semiconductor core optical fibers

    NASA Astrophysics Data System (ADS)

    Morris, Stephanie Lynn

    Glass-clad optical fibers comprising a crystalline semiconductor core have garnered considerable recent attention for their potential utility as novel waveguides for applications in nonlinear optics, sensing, power delivery, and biomedicine. As research into these fibers has progressed, it has become evident that excessive losses are limiting performance and so greater understanding of the underlying materials science, coupled with advances in fiber processing, is needed. More specifically, the semiconductor core fibers possess three performance-limiting characteristics that need to be addressed: (a) thermal expansion mismatches between crystalline core and glass cladding that lead to cracks, (b) the precipitation of oxide species in the core upon fiber cooling, which results from partial dissolution of the cladding glass by the core melt, and (c) polycrystallinity; all of which lead to scattering and increased transmission losses. This dissertation systematically studies each of these effects and develops both a fundamental scientific understanding of and practical engineering methods for reducing their impact. With respect to the thermal expansion mismatch and, in part, the dissolution of oxides, for the first time to our knowledge, oxide and non-oxide glass compositions are developed for a series of semiconductor cores based on two main design criteria: (1) matching the thermal expansion coefficient between semiconductor core and glass cladding to minimize cracking and (2) matching the viscosity-temperature dependences, such that the cladding glass draws into fiber at a temperature slightly above the melting point of the semiconductor in order to minimize dissolution and improve the fiber draw process. The x[Na 2O:Al2O3] + (100 - 2x)SiO2 glass compositional family was selected due to the ability to tailor the glass properties to match the aforementioned targets through slight variations in composition and adjusting the ratios of bridging and non-bridging oxygen

  20. MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction

    NASA Astrophysics Data System (ADS)

    Sedlačková, Katarína; Šagátová, Andrea; Zat'ko, Bohumír; Nečas, Vladimír; Solar, Michael; Granja, Carlos

    2016-09-01

    Silicon Carbide (SiC) has been long recognized as a suitable semiconductor material for use in nuclear radiation detectors of high-energy charged particles, gamma rays, X-rays and neutrons. The nuclear interactions occurring in the semiconductor are complex and can be quantified using a Monte Carlo-based computer code. In this work, the MCNPX (Monte Carlo N-Particle eXtended) code was employed to support detector design and analysis. MCNPX is widely used to simulate interaction of radiation with matter and supports the transport of 34 particle types including heavy ions in broad energy ranges. The code also supports complex 3D geometries and both nuclear data tables and physics models. In our model, monoenergetic neutrons from D-T nuclear reaction were assumed as a source of fast neutrons. Their energy varied between 16 and 18.2 MeV, according to the accelerating voltage of the deuterons participating in D-T reaction. First, the simulations were used to calculate the optimum thickness of the reactive film composed of High Density PolyEthylene (HDPE), which converts neutral particles to charged particles and thusly enhancing detection efficiency. The dependency of the optimal thickness of the HDPE layer on the energy of the incident neutrons has been shown for the inspected energy range. Further, from the energy deposited by secondary charged particles and recoiled ions, the detector response was modeled and the effect of the conversion layer on detector response was demonstrated. The results from the simulations were compared with experimental data obtained for a detector covered by a 600 and 1300 μm thick conversion layer. Some limitations of the simulations using MCNPX code are also discussed.

  1. Dimensional crossover in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-08-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5-10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies.

  2. Dimensional crossover in semiconductor nanostructures

    PubMed Central

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-01-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5–10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies. PMID:27577091

  3. Hypersonic modes in nanophononic semiconductors.

    PubMed

    Hepplestone, S P; Srivastava, G P

    2008-09-01

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  4. Radiation Effects on Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Liu, Guangyu

    In order to observe and analyze the behavior of semiconductor devices under radiation exposure, a real time measurement system has been built so that investigations can be carried out before, during, and after radiation exposure. The system consists of an IBM personal computer with IEEE488 I/O interface board and various Hewlett-Packard instruments. Real time measurement and device parameter characterization programs have been written to accommodate the study. Such a system provides the ability to do not only direct and dynamic measurements, but also comprehensive parameter analyses for semiconductor devices. It is well known that MOS devices are vulnerable to radiation produced ionization. Many MOS device parameters are radiation sensitive. Based on real time measurement results and the mathematical model of a CMOS inverter, a radiation hardening design method has been developed. With the example of noise margin optimization, the concept of desensitizing device parameters is expected to minimize radiation damage to MOS integrated circuits.

  5. Dimensional crossover in semiconductor nanostructures.

    PubMed

    McDonald, Matthew P; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-01-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5-10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies. PMID:27577091

  6. Accuracy of existing atomic potentials for the CdTe semiconductor compound.

    PubMed

    Ward, D K; Zhou, X W; Wong, B M; Doty, F P; Zimmerman, J A

    2011-06-28

    CdTe and CdTe-based Cd(1-x)Zn(x)Te (CZT) alloys are important semiconductor compounds that are used in a variety of technologies including solar cells, radiation detectors, and medical imaging devices. Performance of such systems, however, is limited due to the propensity of nano- and micro-scale defects that form during crystal growth and manufacturing processes. Molecular dynamics simulations offer an effective approach to study the formation and interaction of atomic scale defects in these crystals, and provide insight on how to minimize their concentrations. The success of such a modeling effort relies on the accuracy and transferability of the underlying interatomic potential used in simulations. Such a potential must not only predict a correct trend of structures and energies of a variety of elemental and compound lattices, defects, and surfaces but also capture correct melting behavior and should be capable of simulating crystalline growth during vapor deposition as these processes sample a variety of local configurations. In this paper, we perform a detailed evaluation of the performance of two literature potentials for CdTe, one having the Stillinger-Weber form and the other possessing the Tersoff form. We examine simulations of structures and the corresponding energies of a variety of elemental and compound lattices, defects, and surfaces compared to those obtained from ab initio calculations and experiments. We also perform melting temperature calculations and vapor deposition simulations. Our calculations show that the Stillinger-Weber parameterization produces the correct lowest energy structure. This potential, however, is not sufficiently transferrable for defect studies. Origins of the problems of these potentials are discussed and insights leading to the development of a more transferrable potential suitable for molecular dynamics simulations of defects in CdTe crystals are provided.

  7. Accuracy of existing atomic potentials for the CdTe semiconductor compound

    NASA Astrophysics Data System (ADS)

    Ward, D. K.; Zhou, X. W.; Wong, B. M.; Doty, F. P.; Zimmerman, J. A.

    2011-06-01

    CdTe and CdTe-based Cd1-xZnxTe (CZT) alloys are important semiconductor compounds that are used in a variety of technologies including solar cells, radiation detectors, and medical imaging devices. Performance of such systems, however, is limited due to the propensity of nano- and micro-scale defects that form during crystal growth and manufacturing processes. Molecular dynamics simulations offer an effective approach to study the formation and interaction of atomic scale defects in these crystals, and provide insight on how to minimize their concentrations. The success of such a modeling effort relies on the accuracy and transferability of the underlying interatomic potential used in simulations. Such a potential must not only predict a correct trend of structures and energies of a variety of elemental and compound lattices, defects, and surfaces but also capture correct melting behavior and should be capable of simulating crystalline growth during vapor deposition as these processes sample a variety of local configurations. In this paper, we perform a detailed evaluation of the performance of two literature potentials for CdTe, one having the Stillinger-Weber form and the other possessing the Tersoff form. We examine simulations of structures and the corresponding energies of a variety of elemental and compound lattices, defects, and surfaces compared to those obtained from ab initio calculations and experiments. We also perform melting temperature calculations and vapor deposition simulations. Our calculations show that the Stillinger-Weber parameterization produces the correct lowest energy structure. This potential, however, is not sufficiently transferrable for defect studies. Origins of the problems of these potentials are discussed and insights leading to the development of a more transferrable potential suitable for molecular dynamics simulations of defects in CdTe crystals are provided.

  8. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  9. Selective Etching of Semiconductor Glassivation

    NASA Technical Reports Server (NTRS)

    Casper, N.

    1982-01-01

    Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

  10. Acoustoelectric effect in semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Mensah, S. Y.; Allotey, F. K. A.; Adjepong, S. K.

    1993-10-01

    Acoustoelectric effect in semiconductor superlattice has been studied for acoustic wave whose wavelength lambda = 2pi/q is smaller than the mean free path of the electrons l (where ql approaches 1). Unlike the homogeneous bulk material where Weinreich relation is independent of the wave number q in the superlattice we observe a dependence on q i.e. spatial dispersion. In the presence of applied constant field E a threshold value was obtained where the acoustoelectric current changes direction.

  11. Cooling and mounting power semiconductors

    NASA Astrophysics Data System (ADS)

    Wetzel, P.

    1980-04-01

    The article examines the process of heat dissipation from power semiconductors. It is shown that for the relationship between temperature loading and dissipation it is possible to take an 'Ohm's law of heat abduction' to define the thermal impedance. The computation of the optimal size for a heatsink is demonstrated in detail. Discussion covers the types of heat dissipation such as heat radiation, heat conduction, and convection. Finally, some factors to consider during installation are examined.

  12. Dislocation-induced chirality of semiconductor nanocrystals.

    PubMed

    Baimuratov, Anvar S; Rukhlenko, Ivan D; Gun'ko, Yurii K; Baranov, Alexander V; Fedorov, Anatoly V

    2015-03-11

    Optical activity is a common natural phenomenon, which occurs in individual molecules, biomolecules, biological species, crystalline solids, liquid crystals, and various nanosized objects, leading to numerous important applications in almost every field of modern science and technology. Because this activity can hardly be altered, creation of artificial active media with controllable optical properties is of paramount importance. Here, for the first time to the best of our knowledge, we theoretically demonstrate that optical activity can be inherent to many semiconductor nanowires, as it is induced by chiral dislocations naturally developing during their growth. By assembling such nanowires in two- or three-dimensional periodic lattices, one can create optically active quantum supercrystals whose activity can be varied in many ways owing to the size quantization of the nanowires' energy spectra. We believe that this research is of particular importance for the future development of semiconducting nanomaterials and their applications in nanotechnology, chemistry, biology, and medicine.

  13. The Electron Beam Semiconductor (EBS) amplifier

    NASA Astrophysics Data System (ADS)

    True, R. M.; Baxendale, J. F.

    1980-07-01

    The Electron Beam Semiconductor (EBS) concept has existed for three decades; but only within the last decade has an active, well-defined program been underway to develop devices that can operate as high-power radio frequency(RF) amplifiers, fast risetime switches, and current and voltage pulse amplifiers. This report discusses the test procedures, data and results of reliability testing of RF and video pulse EBS amplifiers at Electronics Research and Development Command (ERADCOM), Fort Monmouth, New Jersey. Also, the experimental analysis of the series connected diode EBS device is described in detail. Finally, the report concludes with a discussion of the state-of-the-art of EBS and future trends of the technology.

  14. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  15. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response. PMID:27295453

  16. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  17. Moving liquids with light: Photoelectrowetting on semiconductors

    NASA Astrophysics Data System (ADS)

    Arscott, Steve

    2011-12-01

    By linking semiconductor physics and wetting phenomena a brand new effect termed ``photoelectrowetting-on-semiconductors'' is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014-8×1018 cm-3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics.

  18. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Register on November 17, 2009 (74 FR 59249). At the request of the petitioners, the Department reviewed the... Employment and Training Administration Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical Information Center, Woburn, MA; Amended Certification...

  19. Stretchable semiconductor elements and stretchable electrical circuits

    DOEpatents

    Rogers, John A.; Khang, Dahl-Young; Menard, Etienne

    2009-07-07

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  20. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  1. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  2. Reflection technique for thermal mapping of semiconductors

    DOEpatents

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  3. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  4. HERO resistant semiconductor bridge igniter

    NASA Astrophysics Data System (ADS)

    Bickes, R. W., Jr.; Greenway, D.; Grubelich, M. C.; Meyer, W. J.; Hartman, J. K.; McCampbell, C. B.

    1992-10-01

    The problem of accidental ignition of explosive components when exposed to radio frequency (RF) environments or radiation from other electromagnetic sources is commonly referred to as Hazards of Electromagnetic Radiation to Ordnance (HERO). One illustration of such a HERO problem is the MK 149 Phalanx ammunition, which is sensitive to RF energy over a broad range of frequencies. We have demonstrated that a potential solution to the Phalanx HERO problem consists of a semiconductor bridge (SCB) igniter that incorporates microcircuitry to protect the SCB from the RF environment. Direct RF injection and ground plane tests have demonstrated the resistance of our designs to severe RF environments.

  5. High gain photoconductive semiconductor switching

    SciTech Connect

    Zutavern, F.J.; Loubriel, G.M.; O'Malley, M.W.; Helgeson, W.D.; McLaughlin, D.L.

    1991-01-01

    Switching properties are reported for high gain photoconductive semiconductor switches (PCSS). A 200 ps pulse width laser was used in tests to examine the relations between electric field, rise time, delay, and minimum optical trigger energy for switches which reached 80 kV in a 50 {Omega} transmission line with rise times as short as 600 ps. Infrared photoluminescence was imaged during high gain switching providing direct evidence for current filamentation. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. 16 refs., 10 figs.

  6. Processing of insulators and semiconductors

    SciTech Connect

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  7. PHOTOOXIDATION OF ORGANIC WASTES USING SEMICONDUCTOR NANOCLUSTERS

    SciTech Connect

    Wilcoxon, Jess P.

    2000-12-31

    It would be a major boon to have a visible light absorbing semiconductor catalytic material available, which is also photostable and non-toxic. Such a photocatalyst would make it possible to exploit sunlight as the sole energy source required for detoxification. To this end we have employed our expertise in nanocluster synthesis and processing to make and purify nanoparticles of MoS2. The band-gap and absorbance edges of these nanoparticles can be adjusted by particle size based upon the quantum confinement of the electron-hole pair. In a recent paper we demonstrated the use of these new photocatalysts to destroy phenol, and demonstrated a strong effect of size or band-gap on the rate of photo-oxidation.5 In this research we investigate the photooxidation kinetics and products formed for a standard material, Degussa P-25 TiO2, as compared to nanosize TiO2, SnO2, and MoS2. We examined the light intensity dependence for nanosize SnO2 compared to TiO2 (Degussa), and the effect o f size on photooxidation kinetics for both SnO2 and MoS2. We studied photooxidation in aqueous systems and, for the first time, a system consisting almost entirely of a polar organic, acetonitrile. Our primary objective was to develop an entirely new class of material: nanosize semiconductors with visible bandgaps and to engineer these material's properties to allow us to photooxidize toxic organic compounds in water on a reasonable time scale ({approx}8 hrs). A second objective was to study how certain material properties such as size, surface treatment, and material type affect the efficiency of the photocatalytic process as well as optimizing these features.

  8. Assessing conceptual knowledge for the physics of semiconductors

    NASA Astrophysics Data System (ADS)

    Ene, Emanuela

    Following the trend in science and engineering education generated by the visible impact created by the Force Concept Inventory (FCI), the investigator developed a Physics of Semiconductors Concept Inventory (PSCI). PSCI fills the need of standardized concept tests for undergraduate education in photonics and electrical engineering. The structure of the PSCI test followed a concept map reflecting the input from a panel of experts from different universities and from a survey of textbooks currently used in engineering schools in the United States. Based on the statistical analysis of the scores and response patterns, the test was calibrated as an instrument to measure participants' cognitive ability independent of items' difficulty. The models employed were the Rasch Model and the Rasch Partial Credit Model. The estimation procedure employed was Conditional Maximum Likelihood. The analysis was carried on using algorithms written in the open-source language R. The current PSCI BETA test contains eighteen calibrated items covering six concepts of the physics of semiconductors. PSCI BETA may be used for three purposes: individual student diagnostic if applied at the beginning of a physics of semiconductors course; predictor for students' academic performance in the field of semiconductors if applied at the end of instruction; assessment instrument for instructional strategies if applied both for pre- and post-instruction. The PSCI BETA instrument can be applied in any English speaking college setting. The main results of the PSCI research are: ranking persons' ability related to the physics of semiconductors on an objective linear scale, building a diagnose matrix that may be utilized by instructors for choosing an optimal teaching approach and by students for remediation, and demonstrating a calibration method for small sample size.

  9. Laser recrystallization of compound semiconductor films. Final report

    SciTech Connect

    Chu, T.L.; Chu, S.C.; Jiang, C.L.; Lin, S.C.; Stokes, E.D.; Yu, J.M.

    1985-01-01

    Considerable efforts have recently been directed to the research and development of thin polycrystallins film photovoltaic devices from direct gap semiconductors with the objective of producing low cost photovoltaic systems. The conversion efficiencies of thin film devices, in most cases, are considerably lower than those of corresponding single crystalline devices due to the grain boundary effects. Extensive investigations thus far have not developed effective techniques to eliminate the grain boundary effects. The objective of this program is to determine the feasibility of using laser recrystallization for the passivation and reduction of grain boundaries in thin semiconductor films. The recrystallization of thin films of cadmium telluride, gallium arsenide, indium phosphide, and zinc phosphide using a pulsed (5 kHz) Nd:YAG laser has been investigated by scanning a laser beam over the specimen surface with successive overlapping scan lines. At a fixed scan rate, the optimum energy density for the recrystallization of the compound semiconductor films was determined. Electron microprobe analysis and electrical characteristics of Schottky barriers indicated the decomposition of these films during recrystallization. The relative extent of decomposition is related to the dissociation pressure of the semiconductor at its melting point. For example, the dissociation pressure of gallium arsenide is considerably lower than that of indium phosphide. The chemical and structural damages in recrystallized gallium arsenide films can be removed by annealing in an arsine atmosphere while those in recrystallized indium phosphide films cannot. Although the recrystallized films are not directly useful for device purposes, homoepitaxial films of compound semiconductors, such as cadium telluride, deposited on recrystallized films have produced photovoltaic devices with improved characteristics.

  10. (Plasmonic Metal Core)/(Semiconductor Shell) Nanostructures

    NASA Astrophysics Data System (ADS)

    Fang, Caihong

    plasmon resonance modes of the Au nanorod core, leading to Fano resonances. Fano resonances for both the transverse and longitudinal plasmon modes were simultaneously observed. The longitudinal Fano resonance is tunable by changing the plasmon energy of the nanorod core. In addition, coating with TiO2 intensifies the transverse plasmon mode of the Au nanorod core. I believe that my research study will be very helpful for the design and applications of metal/semiconductor nanostructures. The full understanding of the plasmonic and structural evolutions during the preparation processes will be useful for designing metal/semiconductor hybrid nanomaterials with desired compositions and plasmonic properties. The efforts towards the investigations of the preparation, plasmonic properties, and applications of (noble metal core)/(semiconductor shell) nanostructures are important for widening their light-harvesting applications.

  11. Optical effects of spin currents in semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Jing

    2011-03-01

    BANG-FEN ZHU, Department of Physics and Institute of Advanced Study, Tsinghua University, REN-BAO LIU, Department of Physics, The Chinese University of Hong Kong -- We predict the linear and second-order nonlinear optical effects of spin currents in semiconductors, based on systematic symmetry analysis and microscopic calculations with realistic models [1, 2]. By an analogue to the Ampere effect and Oersted effect, we conceived and verified that a spin current can be coupled to a ``photon spin curren'' carried by a polarized light beam, which causes sizeable Faraday rotation without involving net magnetization. Furthermore, a spin current can have a strong second-order nonlinear optical effect with unique polarization-dependence due to the special symmetry properties of the spin current. In particular, for a longitudinal spin current, in which the spins point parallel or anti-parallel to the current direction is a chiral quantity, a chiral sum-frequency effect will be induced. The second-order optical effects of spin currents have been experimentally verified immediately after the theoretical prediction. These discoveries represent new phenomena in magneto-optics, with potential spin-photonic applications. They bring new opportunities to research of spintronics and may also facilitate research of topological insulators where the edge states form pure spin currents. This work was supported by the NSFC Grant Nos.10574076, 10774086, and the Basic Research Program of China Grant 2006CB921500, Hong Kong RGC HKU 10/CRF/08 and Hong Kong GRF CUHK 402207.

  12. Semiconductor foundry, lithography, and partners

    NASA Astrophysics Data System (ADS)

    Lin, Burn J.

    2002-07-01

    The semiconductor foundry took off in 1990 with an annual capacity of less than 0.1M 8-inch-equivalent wafers at the 2-mm node. In 2000, the annual capacity rose to more than 10M. Initially, the technology practiced at foundries was 1 to 2 generations behind that at integrated device manufacturers (IDMs). Presently, the progress in 0.13-mm manufacturing goes hand-in-hand with any of the IDMs. There is a two-order of magnitude rise in output and the progress of technology development outpaces IDMs. What are the reasons of the success? Is it possible to sustain the pace? This paper shows the quick rise of foundries in capacity, sales, and market share. It discusses the their uniqueness which gives rise to advantages in conjunction with challenges. It also shows the role foundries take with their customer partners and supplier partners, their mutual dependencies, as well as expectations. What role then does lithography play in the foundries? What are the lithographic challenges to sustain the pace of technology? The experience of technology development and transfer, at one of the major foundries, is used to illustrate the difficulties and progresses made. Looking into the future, as semiconductor manufacturing will become even more expensive and capital investment more prohibitive, we will make an attempt to suggest possible solutions.

  13. Novel room temperature ferromagnetic semiconductors

    SciTech Connect

    Gupta, Amita

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting

  14. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  15. Energetics of the Semiconductor-Electrolyte Interface.

    ERIC Educational Resources Information Center

    Turner, John A.

    1983-01-01

    The use of semiconductors as electrodes for electrochemistry requires an understanding of both solid-state physics and electrochemistry, since phenomena associated with both disciplines are seen in semiconductor/electrolyte systems. The interfacial energetics of these systems are discussed. (JN)

  16. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

    1998-01-27

    A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  17. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, Martin; Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

    1998-01-01

    A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  18. Silicon carbide, a high temperature semiconductor

    NASA Technical Reports Server (NTRS)

    Powell, J. A.

    1983-01-01

    Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

  19. Stable surface passivation process for compound semiconductors

    DOEpatents

    Ashby, Carol I. H.

    2001-01-01

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  20. Photoelectroconversion by Semiconductors: A Physical Chemistry Experiment.

    ERIC Educational Resources Information Center

    Fan, Qinbai; And Others

    1995-01-01

    Presents an experiment designed to give students some experience with photochemistry, electrochemistry, and basic theories about semiconductors. Uses a liquid-junction solar cell and illustrates some fundamental physical and chemical principles related to light and electricity interconversion as well as the properties of semiconductors. (JRH)

  1. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  2. Moving liquids with light: Photoelectrowetting on semiconductors

    PubMed Central

    Arscott, Steve

    2011-01-01

    By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014−8×1018 cm−3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics. PMID:22355699

  3. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  4. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  5. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  6. Creating semiconductor metafilms with designer absorption spectra.

    PubMed

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L

    2015-01-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells. PMID:26184335

  7. Creating semiconductor metafilms with designer absorption spectra

    PubMed Central

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2015-01-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells. PMID:26184335

  8. Semiconductor technology trend and requirements for masks

    NASA Astrophysics Data System (ADS)

    Komiya, Hiroyoshi

    1999-08-01

    The fabrication cost of the semiconductor device is increasing because the fabrication cost per wafer unit area and the mask cost are increasing rapidly with the design rule decreased. The rapid increase in the mask cost will influence the semiconductor industry growth. The progress in the lithography, including the mask, is the key issue for the progress in the entire semiconductor technology beyond 180 nm design rule, because the mask is indispensable for any types of lithography, and is regarded as one of the most critical technologies, both in resolution and productivity. To continue the progress in the entire semiconductor technology and the growth of the semiconductor business, it is indispensable to make challenges in the low cost and high precision mask technology under the cooperation with related industries and academia. It is especially important to develop the cost optimum solution for the total lithography technology including masks.

  9. Manipulating semiconductor colloidal stability through doping.

    PubMed

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  10. Creating semiconductor metafilms with designer absorption spectra

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2015-07-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells.

  11. Visible light water splitting using dye-sensitized oxide semiconductors.

    PubMed

    Youngblood, W Justin; Lee, Seung-Hyun Anna; Maeda, Kazuhiko; Mallouk, Thomas E

    2009-12-21

    Researchers are intensively investigating photochemical water splitting as a means of converting solar to chemical energy in the form of fuels. Hydrogen is a key solar fuel because it can be used directly in combustion engines or fuel cells, or combined catalytically with CO(2) to make carbon containing fuels. Different approaches to solar water splitting include semiconductor particles as photocatalysts and photoelectrodes, molecular donor-acceptor systems linked to catalysts for hydrogen and oxygen evolution, and photovoltaic cells coupled directly or indirectly to electrocatalysts. Despite several decades of research, solar hydrogen generation is efficient only in systems that use expensive photovoltaic cells to power water electrolysis. Direct photocatalytic water splitting is a challenging problem because the reaction is thermodynamically uphill. Light absorption results in the formation of energetic charge-separated states in both molecular donor-acceptor systems and semiconductor particles. Unfortunately, energetically favorable charge recombination reactions tend to be much faster than the slow multielectron processes of water oxidation and reduction. Consequently, visible light water splitting has only recently been achieved in semiconductor-based photocatalytic systems and remains an inefficient process. This Account describes our approach to two problems in solar water splitting: the organization of molecules into assemblies that promote long-lived charge separation, and catalysis of the electrolysis reactions, in particular the four-electron oxidation of water. The building blocks of our artificial photosynthetic systems are wide band gap semiconductor particles, photosensitizer and electron relay molecules, and nanoparticle catalysts. We intercalate layered metal oxide semiconductors with metal nanoparticles. These intercalation compounds, when sensitized with [Ru(bpy)(3)](2+) derivatives, catalyze the photoproduction of hydrogen from sacrificial

  12. Cosmic Ray research in Armenia

    NASA Astrophysics Data System (ADS)

    Chilingarian, A.; Mirzoyan, R.; Zazyan, M.

    2009-11-01

    Cosmic Ray research on Mt. Aragats began in 1934 with the measurements of East-West anisotropy by the group from Leningrad Physics-Technical Institute and Norair Kocharian from Yerevan State University. Stimulated by the results of their experiments in 1942 Artem and Abraham Alikhanyan brothers organized a scientific expedition to Aragats. Since that time physicists were studying Cosmic Ray fluxes on Mt. Aragats with various particle detectors: mass spectrometers, calorimeters, transition radiation detectors, and huge particle detector arrays detecting protons and nuclei accelerated in most violent explosions in Galaxy. Latest activities at Mt. Aragats include Space Weather research with networks of particle detectors located in Armenia and abroad, and detectors of Space Education center in Yerevan.

  13. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    PubMed

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance. PMID:25992464

  14. Laser interferometric method for determining the carrier diffusion length in semiconductors

    SciTech Connect

    Manukhov, V. V.; Fedortsov, A. B.; Ivanov, A. S.

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  15. Multiple Exciton Generation in Semiconductor Nanocrystals: Toward Efficient Solar Energy Conversion

    SciTech Connect

    Beard, M. C.; Ellingson, R. J.

    2008-01-01

    Within the range of photon energies illuminating the Earth's surface, absorption of a photon by a conventional photovoltaic semiconductor device results in the production of a single electron-hole pair; energy of a photon in excess of the semiconductor's bandgap is efficiently converted to heat through interactions between the electron and hole with the crystal lattice. Recently, colloidal semiconductor nanocrystals and nanocrystal films have been shown to exhibit efficient multiple electron-hole pair generation from a single photon with energy greater than twice the effective band gap. This multiple carrier pair process, referred to as multiple exciton generation (MEG), represents one route to reducing the thermal loss in semiconductor solar cells and may lead to the development of low cost, high efficiency solar energy devices. We review the current experimental and theoretical understanding of MEG, and provide views to the near-term future for both fundamental research and the development of working devices which exploit MEG.

  16. Bacteria Inside Semiconductors as Potential Sensor Elements: Biochip Progress

    PubMed Central

    Sah, Vasu R.; Baier, Robert E.

    2014-01-01

    It was discovered at the beginning of this Century that living bacteria—and specifically the extremophile Pseudomonas syzgii—could be captured inside growing crystals of pure water-corroding semiconductors—specifically germanium—and thereby initiated pursuit of truly functional “biochip-based” biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips. PMID:24961215

  17. Extension of spatiotemporal chaos in glow discharge-semiconductor systems

    SciTech Connect

    Akhmet, Marat Fen, Mehmet Onur; Rafatov, Ismail

    2014-12-15

    Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528–4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).].

  18. Extension of spatiotemporal chaos in glow discharge-semiconductor systems.

    PubMed

    Akhmet, Marat; Rafatov, Ismail; Fen, Mehmet Onur

    2014-12-01

    Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528-4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).].

  19. Concepts and designs of ion implantation equipment for semiconductor processing

    NASA Astrophysics Data System (ADS)

    Rose, Peter H.; Ryding, Geoffrey

    2006-11-01

    Manufacturing ion implantation equipment for doping semiconductors has grown into a two billion dollar business. The accelerators developed for nuclear physics research and isotope separation provided the technology from which ion implanters have been developed but the unique requirements of the semiconductor industry defined the evolution of the architecture of these small accelerators. Key elements will be described including ion generation and beam transport systems as well as the techniques used to achieve uniform doping over large wafers. The wafers are processed one at a time or in batches and are moved in and out of the vacuum by automated handling systems. The productivity of an implanter is of economic importance and there is continuing need to increase the usable beam current especially at low energies.

  20. Generation of infrared entangled light in asymmetric semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Lü, Xin-You; Wu, Jing; Zheng, Li-Li; Huang, Pei

    2010-12-01

    We proposed a scheme to achieve two-mode CV entanglement with the frequencies of entangled modes in the infrared range in an asymmetric semiconductor double-quantum-wells (DQW), where the required quantum coherence is obtained by inducing the corresponding intersubband transitions (ISBTs) with a classical field. By numerically simulating the dynamics of system, we show that the entanglement period can be prolonged via enhancing the intensity of classical field, and the generation of entanglement doesn't depend intensively on the initial condition of system in our scheme. Moreover, we also show that a bipartite entanglement amplifier can be realized in our scheme. The present research provides an efficient approach to achieve infrared entangled light in the semiconductor nanostructure, which may have significant impact on the progress of solid-state quantum information theory.