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Sample records for semiconductor radiation-detector research

  1. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  2. Semiconductor radiation detector

    DOEpatents

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  3. Electron gas grid semiconductor radiation detectors

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  4. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  5. Hybrid anode for semiconductor radiation detectors

    DOEpatents

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  6. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  7. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    SciTech Connect

    Harrison, Richard Karl; Howell, Stephen Wayne; Martin, Jeffrey B.; Hamilton, Allister B.

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  8. Method and apparatus for electron-only radiation detectors from semiconductor materials

    SciTech Connect

    2000-05-30

    A system is disclosed for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and HgI{sub 2}, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

  9. Very Low-Power Consumption Analog Pulse Processing ASIC for Semiconductor Radiation Detectors

    SciTech Connect

    Wessendorf, K.O.; Lund, J.C.; Brunett, B.A.; Laguna, G.R.; Clements, J.W.

    1999-08-23

    We describe a very-low power consumption circuit for processing the pulses from a semiconductor radiation detector. The circuit was designed for use with a cadmium zinc telluride (CZT) detector for unattended monitoring of stored nuclear materials. The device is intended to be battery powered and operate at low duty-cycles over a long period of time. This system will provide adequate performance for medium resolution gamma-ray pulse-height spectroscopy applications. The circuit incorporates the functions of a charge sensitive preamplifier, shaping amplifier, and peak sample and hold circuit. An application specific integrated circuit (ASIC) version of the design has been designed, built and tested. With the exception of the input field effect transistor (FET), the circuit is constructed using bipolar components. In this paper the design philosophy and measured performance characteristics of the circuit are described.

  10. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  11. Research on radiation detectors, boiling transients, and organic lubricants

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.

  12. Monte Carlo simulation for the electron cascade due to gamma rays in semiconductor radiation detectors

    SciTech Connect

    Narayan, Raman D.; Miranda, Ryan; Rez, Peter

    2012-03-15

    A Monte Carlo code was developed for simulating the electron cascade in radiation detector materials. The electron differential scattering cross sections were derived from measured electron energy-loss and optical spectra, making the method applicable for a wide range of materials. The detector resolution in a simplified model system shows dependence on the bandgap, the plasmon strength and energy, and the valence band width. In principle, these parameters could be optimized to improve detector performance. The intrinsic energy resolution was calculated for three semiconductors: silicon (Si), gallium arsenide (GaAs), and zinc telluride (ZnTe). Setting the ionization thresholds for electrons and holes is identified as a critical issue, as this strongly affects both the average electron-hole pair energy w and the Fano factor F. Using an ionization threshold from impact ionization calculations as an effective bandgap yields pair energies that are well matched to measured values. Fano factors of 0.091 (Si), 0.100 (GaAs), and 0.075 (ZnTe) were calculated. The Fano factor calculated for silicon using this model was lower than some results from past simulations and experiments. This difference could be attributed to problems in simulating inter-band transitions and the scattering of low-energy electrons.

  13. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  14. X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications

    SciTech Connect

    Nelson, A. J.; Conway, A. M.; Sturm, B. W.; Behymer, E. M.; Reinhardt, C. E.; Nikolic, R. J.; Payne, S. A.; Pabst, G.; Mandal, K. C.

    2009-07-15

    The surface of the layered III-VI chalcogenide semiconductor GaTe was subjected to various chemical treatments commonly used in device fabrication to determine the effect of the resulting microscopic surface composition on transport properties. Various mixtures of H{sub 3}PO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O were accessed and the treated surfaces were allowed to oxidize in air at ambient temperature. High-resolution core-level photoemission measurements were used to evaluate the subsequent chemistry of the chemically treated surfaces. Metal electrodes were created on laminar (cleaved) and nonlaminar (cut and polished) GaTe surfaces followed by chemical surface treatment and the current versus voltage characteristics were measured. The measurements were correlated to understand the effect of surface chemistry on the electronic structure at these surfaces with the goal of minimizing the surface leakage currents for radiation detector devices.

  15. The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

    NASA Astrophysics Data System (ADS)

    Ruddy, Frank H.; Seidel, John G.

    2007-10-01

    Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 °C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress.

  16. RADIATION DETECTOR

    DOEpatents

    Wilson, H.N.; Glass, F.M.

    1960-05-10

    A radiation detector of the type is described wherein a condenser is directly connected to the electrodes for the purpose of performing the dual function of a guard ring and to provide capacitance coupling for resetting the detector system.

  17. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, Dimitrios C.

    1983-01-01

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

  18. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

    DOEpatents

    Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

    2012-09-04

    In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

  19. GaSe and GaTe anisotropic layered semiconductors for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Choi, Michael; Kang, Sung Hoon; Rauh, R. David; Wei, Jiuan; Zhang, Hui; Zheng, Lili; Cui, Y.; Groza, M.; Burger, A.

    2007-09-01

    High quality detector grade GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). A state-of-the-art computer model, MASTRAPP, is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown crystals. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The crystals harvested from ingots of 8-10 cm length and 2.5 cm diameter, have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, low temperature photoluminescence (PL), atomic force microscopy (AFM), and optical absorption/transmission measurements. Single element devices up to 1 cm2 in area have been fabricated from the crystals and tested as radiation detectors by measuring current-voltage (I-V) characteristics and pulse height spectra using 241Am source. The crystals have shown high promise as nuclear detectors with their high dark resistivity (>=10 9 Ω .cm), good charge transport properties (μτ e ~ 1.4x10 -5 cm2/V and μτ h ~ 1.5x10 -5 cm2/V), and relatively good energy resolution (~4% energy resolution at 60 keV). Details of numerical modeling and simulation, detector fabrication, and testing using a 241Am energy source (60 keV) is presented in this paper.

  20. Transport Imaging: Developing an Optical Technique to Characterize Bulk Semiconductor Materials for Next Generation Radiation Detectors

    DTIC Science & Technology

    2009-06-01

    OF PAGES 79 14. SUBJECT TERMS Cathodoluminescence, Diffusion , Drift, Mobility, Lifetime, Bismuth Ferrite , BiFeO3 , Semiconductor, Transport...migrate or diffuse from a region of high concentration to low concentration. The diffusion coefficient (D) quantifies the diffusivity of a material...The diffusion coefficient is found using the Einstein relation kTD e μ = where k is Boltzmann’s constant, T is the temperature, e is the charge

  1. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    SciTech Connect

    Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold; Berding, Martha; Burger, Arnold

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  2. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    SciTech Connect

    James, Ralph

    2010-08-18

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  3. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2015-07-28

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  4. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2014-04-22

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  5. Novel Surface Preparation and Contacts for CdZnTe Nuclear Radiation Detectors Using Patterned Films of Semiconductors and Insulators

    NASA Astrophysics Data System (ADS)

    Burger, Arnold; Groza, Michael; Conway, Adam; Payne, Steve

    2013-04-01

    The semiconductor Cadmium Zinc Telluride (CZT) has emerged as the material of choice for room temperature detection of X-rays and gamma-rays. The detectors will cover the energy range from 30 keV to several MeV, and will achieve excellent 662 keV energy resolution. The development of high resolution gamma ray detectors based on CZT is dependent on low electronic noise levels. One common source of noise is the surface leakage current, which limits the performance of advanced readout schemes such as the coplanar grid and pixelated architectures with steering grids. Excessive bulk leakage current can result from one of several surface effects: leaky native oxides, unsatisfied bonds, and surface damage. We propose to fabricate and test oriented [111] CZT crystals with thicknesses up to 1.5 cm with an innovative detection technique based on co-planar or other electron only transport designs using plasma processing, thin film sputtering, chemical passivation and wet etching techniques. Compared to conventional pixel detectors, the proposed contact configuration needs lower power consumption and a lower cost. The detector design can be used for building very low-cost handheld radiation detection devices.

  6. Tin Can Radiation Detector.

    ERIC Educational Resources Information Center

    Crull, John L.

    1986-01-01

    Provides instructions for making tin can radiation detectors from empty aluminum cans, aluminum foil, clear plastic, copper wire, silica gel, and fine, unwaxed dental floss put together with tape or glue. Also provides suggestions for activities using the detectors. (JN)

  7. Radiation Detectors and Art

    NASA Astrophysics Data System (ADS)

    Denker, Andrea

    The use of radiation detectors in the analysis of art objects represents a very special application in a true interdisciplinary field. Radiation detectors employed in this field detect, e.g., x-rays, γ-rays, β particles, and protons. Analyzed materials range from stones, metals, over porcelain to paintings. The available nondestructive and noninvasive analytical methods cover a broad range of techniques. Hence, for the sake of brevity, this chapter will concentrate on few techniques: Proton Induced X-ray Emission (PIXE) and Proton Induced γ-ray Emission (PIGE).

  8. Electromagnetic radiation detector

    DOEpatents

    Benson, Jay L.; Hansen, Gordon J.

    1976-01-01

    An electromagnetic radiation detector including a collimating window, a cathode member having a photoelectric emissive material surface angularly disposed to said window whereby radiation is impinged thereon at acute angles, an anode, separated from the cathode member by an evacuated space, for collecting photoelectrons emitted from the emissive cathode surface, and a negatively biased, high transmissive grid disposed between the cathode member and anode.

  9. Handheld CZT radiation detector

    DOEpatents

    Murray, William S.; Butterfield, Kenneth B.; Baird, William

    2004-08-24

    A handheld CZT radiation detector having a CZT gamma-ray sensor, a multichannel analyzer, a fuzzy-logic component, and a display component is disclosed. The CZT gamma-ray sensor may be a coplanar grid CZT gamma-ray sensor, which provides high-quality gamma-ray analysis at a wide range of operating temperatures. The multichannel analyzer categorizes pulses produce by the CZT gamma-ray sensor into channels (discrete energy levels), resulting in pulse height data. The fuzzy-logic component analyzes the pulse height data and produces a ranked listing of radioisotopes. The fuzzy-logic component is flexible and well-suited to in-field analysis of radioisotopes. The display component may be a personal data assistant, which provides a user-friendly method of interacting with the detector. In addition, the radiation detector may be equipped with a neutron sensor to provide an enhanced mechanism of sensing radioactive materials.

  10. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

    PubMed

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  11. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  12. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  13. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  14. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at the NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  15. Ionizing radiation detector

    DOEpatents

    Thacker, Louis H.

    1990-01-01

    An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

  16. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  17. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  18. Optical electromagnetic radiation detector

    NASA Astrophysics Data System (ADS)

    Miceli, W. J.; Ludman, J. E.

    1985-08-01

    An optical electromagnetic radiation detector is invented having a probe for receiving nearby electromagnetic radiation. The probe includes a loop antenna connected to a pair of transparent electrodes deposited on the end surfaces of an electro-optic Fabry-Perot interferometer. When the loop antenna picks up the presence of electromagnetic radiation, a voltage will be developed across the crystal of the electro-optic Fabry-Perot interferometer thereby changing the optical length of the interferometer. A beam of light from a remote location is transmitted through an optical fiber onto the Fabry-Perot interferometer. The change in optical length of the Fabry-Perot interferometer alters the intensity of the beam of light as its is reflected from the Fabry-Perot interferometer back through the optical fiber to the remote location. A beamsplitter directs this reflected beam of light onto an intensity detector in order to provide an output indicative of the variations in intensity. The variations in intensity are directly related to the strength of the electromagnetic radiation received by the loop antenna.

  19. Effect of temperature on silicon PIN photodiode radiation detectors

    NASA Astrophysics Data System (ADS)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Ha, Jang Ho; Cho, Seong Yeon

    2014-03-01

    One of the noise sources of a semiconductor radiation detector is thermal noise, which degrades the performance, such as the energy resolution and unexpected random pulse signals. In this study, PIN photodiode radiation detectors, with different active areas were designed and fabricated for an experimental comparison of the energy resolutions for different temperatures and capacitances by using a Ba-133 calibration gamma-ray source. The experimental temperature was approximately in the range from -7 to 24 °C and was controlled by using a peltier device. The design considerations and the electrical characteristics, such as the I-V and the C-V characteristics, are also addressed.

  20. Portable Radiation Detectors

    NASA Technical Reports Server (NTRS)

    1997-01-01

    Through a Small Business Innovation Research (SBIR) contract from Kennedy Space Center, General Pneumatics Corporation's Western Research Center satisfied a NASA need for a non-clogging Joule-Thomson cryostat to provide very low temperature cooling for various sensors. This NASA-supported cryostat development played a key part in the development of more portable high-purity geranium gamma-ray detectors. Such are necessary to discern between the radionuclides in medical, fuel, weapon, and waste materials. The outcome of the SBIR project is a cryostat that can cool gamma-ray detectors, without vibration, using compressed gas that can be stored compactly and indefinitely in a standby mode. General Pneumatics also produces custom J-T cryostats for other government, commercial and medical applications.

  1. Semiconductor radiation detector with internal gain

    DOEpatents

    Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

    2003-04-01

    An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

  2. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    SciTech Connect

    Golshani, Negin Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N{sub 2}, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  3. Low-Power Multi-Aspect Space Radiation Detector System

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave; Freeman, Jon C.; Burkebile, Stephen P.

    2012-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of all of these detector technologies will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the deep space radiation field.

  4. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, Dimitrios C.; Fox, Richard J.

    1981-01-01

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  5. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  6. Development of bulk GaAs room temperature radiation detectors

    SciTech Connect

    McGregor, D.S.; Knoll, G.F. . Dept. of Nuclear Engineering); Eisen, Y. . Soreq Nuclear Research Center); Brake, R. )

    1992-10-01

    This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.

  7. Radiation detectors: needs and prospects

    SciTech Connect

    Armantrout, G.A.

    1981-01-01

    Important applications for x- and ..gamma..-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI/sub 2/, have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties.

  8. Neutron responsive self-powered radiation detector

    DOEpatents

    Brown, Donald P.; Cannon, Collins P.

    1978-01-01

    An improved neutron responsive self-powered radiation detector is disclosed in which the neutron absorptive central emitter has a substantially neutron transmissive conductor collector sheath spaced about the emitter and the space between the emitter and collector sheath is evacuated.

  9. Simple classical model for Fano statistics in radiation detectors

    NASA Astrophysics Data System (ADS)

    Jordan, David V.; Renholds, Andrea S.; Jaffe, John E.; Anderson, Kevin K.; René Corrales, L.; Peurrung, Anthony J.

    2008-02-01

    A simple classical model that captures the essential statistics of energy partitioning processes involved in the creation of information carriers (ICs) in radiation detectors is presented. The model pictures IC formation from a fixed amount of deposited energy in terms of the statistically analogous process of successively sampling water from a large, finite-volume container ("bathtub") with a small dipping implement ("shot or whiskey glass"). The model exhibits sub-Poisson variance in the distribution of the number of ICs generated (the "Fano effect"). Elementary statistical analysis of the model clarifies the role of energy conservation in producing the Fano effect and yields Fano's prescription for computing the relative variance of the IC number distribution in terms of the mean and variance of the underlying, single-IC energy distribution. The partitioning model is applied to the development of the impact ionization cascade in semiconductor radiation detectors. It is shown that, in tandem with simple assumptions regarding the distribution of energies required to create an (electron, hole) pair, the model yields an energy-independent Fano factor of 0.083, in accord with the lower end of the range of literature values reported for silicon and high-purity germanium. The utility of this simple picture as a diagnostic tool for guiding or constraining more detailed, "microscopic" physical models of detector material response to ionizing radiation is discussed.

  10. Recent developments in semiconductor research

    NASA Technical Reports Server (NTRS)

    Yoder, M. N.

    1984-01-01

    Recent findings drawn from various laboratories focused toward a new understanding of the nature of crystal growth and how impurities are incorporated or excluded from the lattice were considered. From these findings a heuristic approach is given for improving the uniformity and charge carrier concentration of thin semiconductor films. Such improvement is considered essential to achieve respectable yield on large scale integrated circuits. A tentative conclusion is drawn which indicates that if the host compound crystal reactants are provided to the growing crystal surface in a reasonably stoichiometric manner, it is virtually impossible to include impurities into a growing crystal surface held at a sufficiently low temperature; impurities are incorporated into the crystal by gettering action of crystal defects located one and two monlayers beneath the growing surface. Devices in 3-5 semiconductors based on heterojunctions and two dimensional electron gases are noted and reliability concerns are voiced. Alternatives and novel device structures such as truly single crystal high quality silicon on insulator and beta silicon carbide devices are presented.

  11. Integrator Circuitry for Single Channel Radiation Detector

    NASA Technical Reports Server (NTRS)

    Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

    2008-01-01

    Input circuitry is provided for a high voltage operated radiation detector to receive pulses from the detector having a rise time in the range of from about one nanosecond to about ten nanoseconds. An integrator circuit, which utilizes current feedback, receives the incoming charge from the radiation detector and creates voltage by integrating across a small capacitor. The integrator utilizes an amplifier which closely follows the voltage across the capacitor to produce an integrator output pulse with a peak value which may be used to determine the energy which produced the pulse. The pulse width of the output is stretched to approximately 50 to 300 nanoseconds for use by subsequent circuits which may then use amplifiers with lower slew rates.

  12. Foam radiators for transition radiation detectors

    NASA Astrophysics Data System (ADS)

    Chernyatin, V.; Dolgoshein, B.; Gavrilenko, I.; Potekhin, M.; Romaniouk, A.; Sosnovtsev, V.

    1993-02-01

    A wide variety of foam radiators, potentially useful in the design of a transition radiation detector, the possible particle identification tool in collider experiments, have been tested in the beam. Various characteristics of these radiators are compared, and the conclusion is reached that certain brands of polyethylene foam are best suited for use in the detector. Comparison is made with a "traditional" radiator, which is a periodic structure of plastic foils.

  13. Processing circuitry for single channel radiation detector

    NASA Technical Reports Server (NTRS)

    Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

    2009-01-01

    Processing circuitry is provided for a high voltage operated radiation detector. An event detector utilizes a comparator configured to produce an event signal based on a leading edge threshold value. A preferred event detector does not produce another event signal until a trailing edge threshold value is satisfied. The event signal can be utilized for counting the number of particle hits and also for controlling data collection operation for a peak detect circuit and timer. The leading edge threshold value is programmable such that it can be reprogrammed by a remote computer. A digital high voltage control is preferably operable to monitor and adjust high voltage for the detector.

  14. Development of a plasma panel radiation detector

    NASA Astrophysics Data System (ADS)

    Ball, R.; Beene, J. R.; Ben-Moshe, M.; Benhammou, Y.; Bensimon, B.; Chapman, J. W.; Etzion, E.; Ferretti, C.; Friedman, P. S.; Levin, D. S.; Silver, Y.; Varner, R. L.; Weaverdyck, C.; Wetzel, R.; Zhou, B.; Anderson, T.; McKinny, K.; Bentefour, E. H.

    2014-11-01

    This article reports on the development and experimental results of commercial plasma display panels adapted for their potential use as micropattern gas radiation detectors. The plasma panel sensor (PPS) design and materials include glass substrates, metal electrodes and inert gas mixtures which provide a physically robust, hermetically sealed device. Plasma display panels used as detectors were tested with cosmic ray muons, beta rays and gamma rays, protons, and thermal neutrons. The results demonstrated rise times and time resolution of a few nanoseconds, as well as sub-millimeter spatial resolution compatible with the pixel pitch.

  15. Device for calibrating a radiation detector system

    DOEpatents

    McFee, M.C.; Kirkham, T.J.; Johnson, T.H.

    1994-12-27

    A device is disclosed for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a ''shield plate'' or shell, and an opposing ''source plate'' containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects. 3 figures.

  16. Device for calibrating a radiation detector system

    DOEpatents

    Mc Fee, Matthew C.; Kirkham, Tim J.; Johnson, Tippi H.

    1994-01-01

    A device for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a "shield plate" or shell, and an opposing "source plate" containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, heart, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects.

  17. Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

    NASA Technical Reports Server (NTRS)

    Barry, Mamadou Y.

    1999-01-01

    The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

  18. Radiation detector system having heat pipe based cooling

    DOEpatents

    Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

    2006-10-31

    A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

  19. Ultra-thin plasma radiation detector

    DOEpatents

    Friedman, Peter S.

    2017-01-24

    A position-sensitive ionizing-radiation counting detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

  20. PAMELA Space Mission: The Transition Radiation Detector

    NASA Astrophysics Data System (ADS)

    Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

    2003-07-01

    PAMELA telescope is a satellite-b orne magnetic spectrometer built to fulfill the primary scientific objectives of detecting antiparticles (antiprotons and positrons) in the cosmic rays, and to measure spectra of particles in cosmic rays. The PAMELA telescope is currently under integration and is composed of: a silicon tracker housed in a permanent magnet, a time of flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD detector is composed of 9 sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD detector characteristics will be described along with its performance studied exposing the detector to particle beams of electrons, pions, muons and protons of different momenta at both CERN-PS and CERN-SPS facilities.

  1. Space Research Results Purify Semiconductor Materials

    NASA Technical Reports Server (NTRS)

    2010-01-01

    While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

  2. Wire chamber radiation detector with discharge control

    DOEpatents

    Perez-Mendez, Victor; Mulera, Terrence A.

    1984-01-01

    A wire chamber radiation detector (11) has spaced apart parallel electrodes (16) and grids (17, 18, 19) defining an ignition region (21) in which charged particles (12) or other ionizing radiations initiate brief localized avalanche discharges (93) and defining an adjacent memory region (22) in which sustained glow discharges (94) are initiated by the primary discharges (93). Conductors (29, 32) of the grids (18, 19) at each side of the memory section (22) extend in orthogonal directions enabling readout of the X-Y coordinates of locations at which charged particles (12) were detected by sequentially transmitting pulses to the conductors (29) of one grid (18) while detecting transmissions of the pulses to the orthogonal conductors (36) of the other grid (19) through glow discharges (94). One of the grids (19) bounding the memory region (22) is defined by an array of conductive elements (32) each of which is connected to the associated readout conductor (36) through a separate resistance (37). The wire chamber (11) avoids ambiguities and imprecisions in the readout of coordinates when large numbers of simultaneous or near simultaneous charged particles (12) have been detected. Down time between detection periods and the generation of radio frequency noise are also reduced.

  3. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  4. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  5. Portable radiation detector and mapping system

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1995-12-31

    A portable radiation detector and mapping system (RADMAPS) has been developed to detect, locate, and plot nuclear radiation intensities on commercially available digital maps and other images. The field unit records gamma-ray spectra or neutron signals together with positions from a global positioning system (GPS) on flash memory cards. The recorded information is then transferred to a laptop computer for spectral data analyses and then georegistered graphically on maps, photographs, etc. RADMAPS integrates several existing technologies to produce a preprogrammable field unit uniquely suited for each survey, as required. The system records spectra from a NaI(Tl) gamma-ray detector or an enriched {sup 6}Li doped glass neutron scintillator. Standard Geographic Information System (GIS) software installed in a lap-top, complete with CD-ROM supporting digitally imaged maps, permits the characterization of nuclear material in the field when the presence of such material is not otherwise documented. This paper gives the results of a typical site survey of the Savannah River site (SRS) using RADMAPS. The ability to provide rapid field data should be of use in treaty verification, safeguards, decontamination, and nuclear weapons dismantlement.

  6. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... from the specification packaging in this subchapter and, except when transported by air, from labeling... with a burst pressure of not less than three times the design pressure if the radiation detector...

  7. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... from the specification packaging in this subchapter and, except when transported by air, from labeling... with a burst pressure of not less than three times the design pressure if the radiation detector...

  8. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... from the specification packaging in this subchapter and, except when transported by air, from labeling... with a burst pressure of not less than three times the design pressure if the radiation detector...

  9. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... from the specification packaging in this subchapter and, except when transported by air, from labeling... with a burst pressure of not less than three times the design pressure if the radiation detector...

  10. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... from the specification packaging in this subchapter and, except when transported by air, from labeling... with a burst pressure of not less than three times the design pressure if the radiation detector...

  11. Electromechanically cooled germanium radiation detector system

    NASA Astrophysics Data System (ADS)

    Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

    1999-02-01

    We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++ [1], GAMANL [2], GRPANL [3]and MGAU [4], typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service [5]. The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted.

  12. Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    2014-01-01

    Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

  13. Field Testing of a Portable Radiation Detector and Mapping System

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1998-03-01

    Researchers at the Savannah River Site (SRS) have developed a man- portable radiation detector and mapping system (RADMAPS) which integrates the accumulation of radiation information with precise ground locations. RADMAPS provides field personnel with the ability to detect, locate, and characterize nuclear material at a site or facility by analyzing the gamma or neutron spectra and correlating them with position. the man-portable field unit records gamma or neutron count rate information and its location, along with date and time, using an embedded Global Positioning System (GPS). RADMAPS is an advancement in data fusion, integrating several off-the-shelf technologies with new computer software resulting in a system that is simple to deploy and provides information useful to field personnel in an easily understandable form. Decisions on subsequent actions can be made in the field to efficiently use available field resources. The technologies employed in this system include: recording GPS, radiation detection (typically scintillation detectors), pulse height analysis, analog-to-digital converters, removable solid-state (Flash or SRAM) memory cards, Geographic Information System (GIS) software and personal computers with CD-ROM supporting digital base maps. RADMAPS includes several field deployable data acquisition systems designed to simultaneously record radiation and geographic positions. This paper summarizes the capabilities of RADMAPS and some of the results of field tests performed with the system.

  14. Large dynamic range radiation detector and methods thereof

    DOEpatents

    Marrs, Roscoe E [Livermore, CA; Madden, Norman W [Sparks, NV

    2012-02-14

    According to one embodiment, a radiation detector comprises a scintillator and a photodiode optically coupled to the scintillator. The radiation detector also includes a bias voltage source electrically coupled to the photodiode, a first detector operatively electrically coupled to the photodiode for generating a signal indicative of a level of a charge at an output of the photodiode, and a second detector operatively electrically coupled to the bias voltage source for generating a signal indicative of an amount of current flowing through the photodiode.

  15. R&D for Better Nuclear Security: Radiation Detector Materials

    SciTech Connect

    Kammeraad, J E

    2009-04-02

    I am going to talk about the need for better materials for radiation detectors. I believe that government investment in this area can enable transformational technology change that could impact domestic nuclear security and also national nuclear security in some very positive and powerful ways. I'm not going to give you a lecture on how radiation detectors work, but I am going to tell you a bit about today's off-the-shelf technology and why it is not sufficient, what we need, and what security benefit you could get from improvements. I think we're at a critical point in time for some very impactful investments. In particular I'm going to focus on the use of gamma-ray radiation detectors at ports of entry. Not long before DHS was formed, Congress decreed that counter measures against the delivery of radiological and nuclear threats would be put in place at US ports of entry, under the authority of US Customs (later Customs and Border Protection in DHS). This included the screening of all cars and trucks passing through a port of entry. Existing off-the-shelf radiation detectors had to be selected for this purpose. Plans were made to make the most of the available technologies, but there are some inherent limitations of these detectors, plus the operational setting can bring out other limitations.

  16. Self-powered radiation detector with conductive emitter support

    SciTech Connect

    Bauer, R.F.; Goldstein, N.P.; Playfoot, K.C.

    1981-05-12

    A more reliable self-powered radiation detector structure and method of manufacture is provided by a detector structure in which a relatively ductile centrally disposed conductive emitter wire supports and is in electrical contact with a generally tubular emitter electrode. The detector is fabricated by swaging and the ductile center wire insures that electrical discontinuities of the emitter are minimized.

  17. Real-time self-networking radiation detector apparatus

    DOEpatents

    Kaplan, Edward; Lemley, James; Tsang, Thomas Y.; Milian, Laurence W.

    2007-06-12

    The present invention is for a radiation detector apparatus for detecting radiation sources present in cargo shipments. The invention includes the features of integrating a bubble detector sensitive to neutrons and a GPS system into a miniaturized package that can wirelessly signal the presence of radioactive material in shipping containers. The bubble density would be read out if such indicated a harmful source.

  18. Mercuric iodide single crystals for nuclear radiation detectors

    SciTech Connect

    Li, W.; Li, Z.; Zhu, S.; Yin, S.; Zhao, B.; Chen, G.; Yin, S.; Yuan, H.; Xu, H.

    1996-06-01

    Large size HgI{sub 2} single crystals were grown using the Modified Temperature Oscillation Method (MTOM) with low dislocation densities in a relatively stable temperature environment. Radiation detectors were fabricated from the single crystals which showed good energy resolution with small polarization. Applications have been found in geological explorations, marine mineral analysis, environment pollution monitoring, industrial material quality assurance, and space explorations.

  19. SENTIRAD—An innovative personal radiation detector based on a scintillation detector and a silicon photomultiplier

    NASA Astrophysics Data System (ADS)

    Osovizky, A.; Ginzburg, D.; Manor, A.; Seif, R.; Ghelman, M.; Cohen-Zada, I.; Ellenbogen, M.; Bronfenmakher, V.; Pushkarsky, V.; Gonen, E.; Mazor, T.; Cohen, Y.

    2011-10-01

    The alarming personal radiation detector (PRD) is a device intended for Homeland Security (HLS) applications. This portable device is designed to be worn or carried by security personnel to detect photon-emitting radioactive materials for the purpose of crime prevention. PRD is required to meet the scope of specifications defined by various HLS standards for radiation detection. It is mandatory that the device be sensitive and simultaneously small, pocket-sized, of robust mechanical design and carriable on the user's body. To serve these specialized purposes and requirements, we developed the SENTIRAD, a new radiation detector designed to meet the performance criteria established for counterterrorist applications. SENTIRAD is the first commercially available PRD based on a CsI(Tl) scintillation crystal that is optically coupled with a silicon photomultiplier (SiPM) serving as a light sensor. The rapidly developing technology of SiPM, a multipixel semiconductor photodiode that operates in Geiger mode, has been thoroughly investigated in previous studies. This paper presents the design considerations, constraints and radiological performance relating to the SENTIRAD radiation sensor.

  20. Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships

    ERIC Educational Resources Information Center

    Logar, Nathaniel; Anadon, Laura Diaz; Narayanamurti, Venkatesh

    2014-01-01

    In the study of innovation institutions, it is important to consider how different institutional models can affect a research organization in conducting or funding successful work. As an industry collaborative, Semiconductor Research Corporation (SRC) provides an example of a privately funded institution that leverages the inputs of several member…

  1. Characterization of Thallium Bromide (TlBr) for Room Temperature Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Smith, Holland McTyeire

    Thallium bromide (TlBr) has emerged as a remarkably well-suited material for room temperature radiation detection. The unique combination of high-Z elements, high density, suitable band gap, and excellent electrical transport properties present in TlBr have brought device performance up to par with CdZnTe (CZT), the current market-leading room temperature radiation detector material. TlBr research is at an earlier stage than that of CZT, giving hope that the material will see even further improvement in electronic properties. Improving a resistive semiconductor material requires knowledge of deep levels present in the material and the effects of these deep levels on transport properties. Very few deep level studies have been conducted on TlBr, and none with the depth required to generate useful growth suggestions. In this dissertation, deep levels in nominally undoped and doped TlBr samples are studied with electrical and optical methods. Photo-Induced Conductivity Transient Spectroscopy (PICTS) is used to discover many deep levels in TlBr electrically. These levels are compared to sub-band gap optical transitions originating from defects observed in emission spectra. The results of this research indicate that the origin of resistivity in TlBr is likely due to deep level defects pinning the Fermi level at least ˜0.7 eV from either the conduction or valence band edge. The effect of dopants and deep levels on transport in TlBr is assessed with microwave photoconductivity decay analysis. It is found that Pb-, Se-, and O-doping decreases carrier lifetime in TlBr, whereas C-doping does not. TlBr exhibits weak ionic conductivity at room temperature, which both negatively affects the leakage current of detectors and leads to device degradation over time. Researchers are actively looking for ways to reduce or eliminate the ionic conductivity, but are faced with an intriguing challenge of materials engineering: is it possible to mitigate the ionic conduction of Tl

  2. Simulation of ion beam induced current in radiation detectors and microelectronic devices.

    SciTech Connect

    Vizkelethy, Gyorgy

    2009-10-01

    Ionizing radiation is known to cause Single Event Effects (SEE) in a variety of electronic devices. The mechanism that leads to these SEEs is current induced by the radiation in these devices. While this phenomenon is detrimental in ICs, this is the basic mechanism behind the operation of semiconductor radiation detectors. To be able to predict SEEs in ICs and detector responses we need to be able to simulate the radiation induced current as the function of time. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. On the other end, TCAD programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. A simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework.

  3. Simulation of ion beam induced current in radiation detectors and microelectronic devices.

    SciTech Connect

    Vizkelethy, Gyorgy

    2010-07-01

    Ionizing radiation is known to cause Single Event Effects (SEE) in a variety of electronic devices. The mechanism that leads to these SEEs is current induced by the radiation in these devices. While this phenomenon is detrimental in ICs, this is the basic mechanism behind the operation of semiconductor radiation detectors. To be able to predict SEEs in ICs and detector responses we need to be able to simulate the radiation induced current as the function of time. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. On the other end, TCAD programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. A simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework.

  4. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  5. A large area transition radiation detector for the NOMAD experiment

    NASA Astrophysics Data System (ADS)

    Bassompierre, G.; Bermond, M.; Berthet, M.; Bertozzi, T.; Détraz, C.; Dubois, J.-M.; Dumps, L.; Engster, C.; Fazio, T.; Gaillard, G.; Gaillard, J.-M.; Gouanère, M.; Manola-Poggioli, E.; Mossuz, L.; Mendiburu, J.-P.; Nédélec, P.; Palazzini, E.; Pessard, H.; Petit, P.; Petitpas, P.; Placci, A.; Sillou, D.; Sottile, R.; Valuev, V.; Verkindt, D.; Vey, H.; Wachnik, M.

    1998-02-01

    A transition radiation detector to identify electrons at 90% efficiency with a rejection factor against pions of 10 3 on an area of 2.85 × 2.85 m 2 has been constructed for the NOMAD experiment. Each of its 9 modules includes a 315 plastic foil radiator and a detector plane of 176 vertical straw tubes filled with a xenon-methane gas mixture. Details of the design, construction and operation of the detector are given.

  6. Device for detachably securing a collimator to a radiation detector

    SciTech Connect

    Hanz, G.J.; Jung, G.; Pflaum, M.

    1986-12-16

    A device is described for detachably securing a collimator to a radiation detector, comprising: (a) a first annular groove means secured to the radiation detector; (b) a second annular groove means secured to the collimator; (c) a split ring having a first and second ring ends, the ring being received in the first annular groove means; and (d) a ring diameter control system, including (d1) a first lever system having two ends; (d2) a second lever system having two ends; and (d3) a rotating hub being rotatably secured to the detector head; wherein the first lever system is rotatably mounted with one end linked to the first ring end and with the other end linked to the rotating hub. The second lever system is rotatably mounted with one end linked to the second ring end and with the other end linked to the rotating hub, such that rotation of the rotating hub moves the first and second lever systems in opposite directions thereby moving the first and second ring ends between a first position, in which the split ring is positioned only in the first annular groove means, and a second position, in which the split ring is located in both the first annular groove means and the second annular groove means, thus attaching the collimator to the radiation detector.

  7. Recent progress in the development of transition radiation detectors

    NASA Technical Reports Server (NTRS)

    Cherry, M. L.; Hartmann, G.; Prince, T.; Mueller, D.

    1978-01-01

    Transition-radiation detectors have been used in several recent cosmic-ray experiments for particle identification at energies E/mc-squared of at least about 1000. In order to optimize the design of such detectors and to use them for energy measurements over a broad energy range, it is necessary to study the details of the transition-radiation process. Experimental results are presented which test the theoretical predictions more precisely and at higher energies than in previous experiments. The dependence of the interference pattern in the frequency spectrum on the radiator dimensions is studied, and the total transition-radiation yield generated by electrons in various radiators is measured over a very wide energy range, from 5 to 300 GeV. The significance of the individual experimental parameters in the design of transition radiation detectors is reviewed, and the characteristics of transition-radiation detectors capable of measuring particle energies over the range E/mc-squared from about 300 to 100,000 are discussed.

  8. The impact of space research on semiconductor crystal growth technology

    NASA Technical Reports Server (NTRS)

    Witt, A. F.

    1983-01-01

    Crystal growth experiments in reduced gravity environment and related ground-based research have contributed significantly to the establishment of a scientific basis for semiconductor growth from the melt. NASA-sponsored research has been instrumental in the introduction of heat pipes for heat and mass transfer control in crystal growth and in the development of magnetic field induced melt stabilization, approaches primarily responsible for recent advances in crystal growth technology.

  9. Field Deployable Gamma Radiation Detectors for DHS Use

    SciTech Connect

    Sanjoy Mukhopadhyay

    2007-08-01

    Recently, the Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial off-the-shelf and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS requirements in terms of sensitivity, resolution, response time, and reach-back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron's identiFINDER{trademark}, which primarily uses sodium iodide crystals (3.18 x 2.54cm cylinders) as gamma detectors, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack{trademark} that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity, better resolution, and faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation, and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets an alarm condition. When a substantial alarm level is reached, the system automatically triggers the saving of relevant

  10. Field Deployable Gamma Radiation Detectors for DHS Use

    SciTech Connect

    Sanjoy Mukhopadhyay

    2007-08-31

    Recently, the U.S. Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS’s requirements in terms of sensitivity, resolution, response time and reach back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron’s identiFINDER™, which primarily uses sodium iodide crystals (3.18-cm x 2.54-cm cylinders) as gamma detector, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack™ that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity (comparable to that of a 7.62-cm x 7.62-cm sodium iodide crystal at low gamma energy ranging from 30 keV to 3,000 keV), better resolution (< 3.0 percent at 662 keV), faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets

  11. Field-deployable gamma-radiation detectors for DHS use

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, Sanjoy

    2007-09-01

    Recently, the Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial off-the-shelf and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS' requirements in terms of sensitivity, resolution, response time, and reach-back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron's identiFINDER TM, which primarily uses sodium iodide crystals (3.18 x 2.54cm cylinders) as gamma detectors, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack TM that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field1. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity, better resolution, and faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation, and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets an alarm condition. When a substantial alarm level is reached, the system automatically triggers the saving of relevant spectral data and

  12. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  13. Review on the characteristics of radiation detectors for dosimetry and imaging

    NASA Astrophysics Data System (ADS)

    Seco, Joao; Clasie, Ben; Partridge, Mike

    2014-10-01

    The enormous advances in the understanding of human anatomy, physiology and pathology in recent decades have led to ever-improving methods of disease prevention, diagnosis and treatment. Many of these achievements have been enabled, at least in part, by advances in ionizing radiation detectors. Radiology has been transformed by the implementation of multi-slice CT and digital x-ray imaging systems, with silver halide films now largely obsolete for many applications. Nuclear medicine has benefited from more sensitive, faster and higher-resolution detectors delivering ever-higher SPECT and PET image quality. PET/MR systems have been enabled by the development of gamma ray detectors that can operate in high magnetic fields. These huge advances in imaging have enabled equally impressive steps forward in radiotherapy delivery accuracy, with 4DCT, PET and MRI routinely used in treatment planning and online image guidance provided by cone-beam CT. The challenge of ensuring safe, accurate and precise delivery of highly complex radiation fields has also both driven and benefited from advances in radiation detectors. Detector systems have been developed for the measurement of electron, intensity-modulated and modulated arc x-ray, proton and ion beams, and around brachytherapy sources based on a very wide range of technologies. The types of measurement performed are equally wide, encompassing commissioning and quality assurance, reference dosimetry, in vivo dosimetry and personal and environmental monitoring. In this article, we briefly introduce the general physical characteristics and properties that are commonly used to describe the behaviour and performance of both discrete and imaging detectors. The physical principles of operation of calorimeters; ionization and charge detectors; semiconductor, luminescent, scintillating and chemical detectors; and radiochromic and radiographic films are then reviewed and their principle applications discussed. Finally, a general

  14. Radiation detectors as surveillance monitors for IAEA safeguards

    SciTech Connect

    Fehlau, P.E.; Dowdy, E.J.

    1980-10-01

    Radiation detectors used for personnel dosimetry are examined for use under IAEA Safeguards as monitors to confirm the passage or nonpassage (YES/NO) of plutonium-bearing nuclear material at barrier penetrations declared closed. In this application where backgrounds are ill defined, no advantage is found for a particular detector type because of intrinsic efficiency. Secondary considerations such as complexity, ease of tamper-proofing, and ease of readout are used to recommend specific detector types for routine monitoring and for data-base measurements. Recommendations are made for applications, data acquisition, and instrument development.

  15. Radiation detector having a multiplicity of individual detecting elements

    DOEpatents

    Whetten, Nathan R.; Kelley, John E.

    1985-01-01

    A radiation detector has a plurality of detector collection element arrays immersed in a radiation-to-electron conversion medium. Each array contains a multiplicity of coplanar detector elements radially disposed with respect to one of a plurality of positions which at least one radiation source can assume. Each detector collector array is utilized only when a source is operative at the associated source position, negating the necessity for a multi-element detector to be moved with respect to an object to be examined. A novel housing provides the required containment of a high-pressure gas conversion medium.

  16. Calibration of the active radiation detector for Spacelab-One

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The flight models of the active radiation detector (ARD) for the ENV-01 environmental monitor were calibrated using gamma radiation. Measured sensitivities of the ion chambers were 6.1 + or - 0.3 micron rad per count for ARD S/N1, and 10.4 + or - 0.5 micron rad per count for ARD S/N2. Both were linear over the measured range 0.10 to 500 m/rad hour. The particle counters (proportional counters) were set to respond to approximately 85% of minimum ionizing particles of unit charge passing through them. These counters were also calibrated in the gamma field.

  17. Room temperature aluminum antimonide radiation detector and methods thereof

    DOEpatents

    Lordi, Vincenzo; Wu, Kuang Jen J.; Aberg, Daniel; Erhart, Paul; Coombs, III, Arthur W; Sturm, Benjamin W

    2015-03-03

    In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

  18. Crystal growth, characterization, and testing of Cd0.9Zn0.1Te single crystals for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Noblitt, Caleb; Choi, Michael; Rauh, R. D.; Roy, Utpal N.; Groza, Michael; Burger, Arnold; Holcomb, David E.; Jellison, Gerald E., Jr.

    2004-10-01

    This paper describes our recent research in growing large single crystals of Cd0.9Zn0.1Te (CZT) by the vertical Bridgman technique using in-house processed zone refined precursor materials (Cd, Zn, and Te). The grown semi-insulating CZT crystals have shown high promise for high-resolution room-temperature radiation detectors due to their high dark resistivity (~1010 Ωcm), reasonably good charge transport properties [(μτ)e = (2-5) x 10-3 cm2/V] and low cost. The grown CZT single crystals (~2.5 cm diameter and up to 10 cm long) have demonstrated a very low radial Zn concentration deviation, low dislocation densities and Te precipitate/inclusions, and high infrared transmission. Details of the CZT single crystal growth, their physical and chemical analysis, surface processing, nuclear radiation detector fabrication, and testing of these devices are also presented.

  19. Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

    NASA Technical Reports Server (NTRS)

    Wagner, L. J.

    1977-01-01

    The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

  20. Multiple cell radiation detector system, and method, and submersible sonde

    DOEpatents

    Johnson, Larry O.; McIsaac, Charles V.; Lawrence, Robert S.; Grafwallner, Ervin G.

    2002-01-01

    A multiple cell radiation detector includes a central cell having a first cylindrical wall providing a stopping power less than an upper threshold; an anode wire suspended along a cylindrical axis of the central cell; a second cell having a second cylindrical wall providing a stopping power greater than a lower threshold, the second cylindrical wall being mounted coaxially outside of the first cylindrical wall; a first end cap forming a gas-tight seal at first ends of the first and second cylindrical walls; a second end cap forming a gas-tight seal at second ends of the first and second cylindrical walls; and a first group of anode wires suspended between the first and second cylindrical walls.

  1. Charge transport properties of CdMnTe radiation detectors

    SciTech Connect

    Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

    2012-04-11

    Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

  2. BOBCAT Personal Radiation Detector Field Test and Evaluation Campaign

    SciTech Connect

    Chris Hodge

    2008-03-01

    Following the success of the Anole test of portable detection system, the U.S. Department of Homeland Security (DHS) Domestic Nuclear Detection Office organized a test and evaluation campaign for personal radiation detectors (PRDs), also known as “Pagers.” This test, “Bobcat,” was conducted from July 17 to August 8, 2006, at the Nevada Test Site. The Bobcat test was designed to evaluate the performance of PRDs under various operational scenarios, such as pedestrian surveying, mobile surveying, cargo container screening, and pedestrian chokepoint monitoring. Under these testing scenarios, many operational characteristics of the PRDs, such as gamma and neutron sensitivities, positive detection and false alarm rates, response delay times, minimum detectable activities, and source localization errors, were analyzed. This paper will present the design, execution, and methodologies used to test this equipment for the DHS.

  3. Personal Radiation Detector Field Test and Evaluation Campaign

    SciTech Connect

    Chris A. Hodge, Ding Yuan, Raymond P. Keegan, Michael A. Krstich

    2007-07-09

    Following the success of the Anole test of portable detection system, the U.S. Department of Homeland Security (DHS) Domestic Nuclear Detection Office organized a test and evaluation campaign for personal radiation detectors (PRDs), also known as 'Pagers'. This test, 'Bobcat', was conducted from July 17 to August 8, 2006, at the Nevada Test Site. The Bobcat test was designed to evaluate the performance of PRDs under various operational scenarios, such as pedestrian surveying, mobile surveying, cargo container screening, and pedestrian chokepoint monitoring. Under these testing scenarios, many operational characteristics of the PRDs, such as gamma and neutron sensitivities, positive detection and false alarm rates, response delay times, minimum detectable activities, and source localization errors, were analyzed. This paper will present the design, execution, and methodologies used to test this equipment for the DHS.

  4. The transition radiation detector of the PAMELA space mission

    NASA Astrophysics Data System (ADS)

    Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; de Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

    2004-04-01

    PAMELA space mission objective is to flight a satellite-borne magnetic spectrometer built to fulfill the primary scientific goals of detecting antiparticles (antiprotons and positrons) and to measure spectra of particles in cosmic rays. The PAMELA telescope is composed of: a silicon tracker housed in a permanent magnet, a time-of-flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD is composed of nine sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD characteristics will be described along with its performances studied at both CERN-PS and CERN-SPS facilities, using electrons, pions, muons and protons of different momenta.

  5. Multi-directional radiation detector using photographic film

    NASA Astrophysics Data System (ADS)

    Junet, L. K.; Majid, Z. A. Abdul; Sapuan, A. H.; Sayed, I. S.; Pauzi, N. F.

    2014-11-01

    Ionising radiation has always been part of our surrounding and people are continuously exposed to it. Ionising radiation is harmful to human health, thus it is vital to monitor the radiation. To monitor radiation, there are three main points that should be observed cautiously, which are energy, quantity, and direction of the radiation sources. A three dimensional (3D) dosimeter is an example of a radiation detector that provide these three main points. This dosimeter is able to record the radiation dose distribution in 3D. Applying the concept of dose detection distribution, study has been done to design a multi-directional radiation detector of different filter thicknesses. This is obtained by designing a cylinder shaped aluminum filter with several layers of different thickness. Black and white photographic material is used as a radiation-sensitive material and a PVC material has been used as the enclosure. The device is then exposed to a radiation source with different exposure factors. For exposure factor 70 kVp, 16 mAs; the results have shown that optical density (OD) value at 135° is 1.86 higher compared with an OD value at 315° which is 0.71 as the 135° area received more radiation compare to 315° region. Furthermore, with an evidence of different angle of film give different value of OD shows that this device has a multidirectional ability. Materials used to develop this device are widely available in the market, thus reducing the cost of development and making it suitable for commercialisation.

  6. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    SciTech Connect

    B. A. Brunett; J. C. Lund; J. M. Van Scyoc; N. R. Hilton; E. Y. Lee; R. B. James

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors.

  7. Parasitic Effects Affecting Responsivity of Sub-THz Radiation Detector Built of a MOSFET

    NASA Astrophysics Data System (ADS)

    Kopyt, P.; Salski, B.; Marczewski, J.; Zagrajek, P.; Lusakowski, J.

    2015-11-01

    In this paper, an analysis of parasitic elements that are found in all typical metal-oxide-semiconductor field-effect transistors (MOSFETs) has been performed from a viewpoint of a designer of sub-THz radiation detectors. A simplified model of the extrinsic MOSFET device has been proposed. Typical values of its parameters have been assumed. The authors have also built a model of the MOSFET's channel (intrinsic device) employing the standard transmission line approach and defining a Z-matrix of the circuit in order to facilitate its integration with the parasitic elements. The full effective circuit model of the MOSFET has been employed to analyze the behavior of the detector when subjected to sub-THz radiation delivered through the Gate and Source pads. Finally, predictions of the responsivity of an example detector built of a typical MOSFET integrated with a patch antenna fabricated on a 40-μm-thick silicon membrane have been compared with measurements of several structures employing MOSFETs of various channel widths. Good agreement between the predictions and the measurements has been demonstrated, which indicates that despite its simplicity, the presented model can significantly help to better understand operation of MOSFET-based detectors and also to use the existing silicon-based manufacturing processes.

  8. Contributive research in compound semiconductor material and related devices

    NASA Astrophysics Data System (ADS)

    Twist, James R.

    1988-05-01

    The objective of this program was to provide the Electronic Device Branch (AFWAL/AADR) with the support needed to perform state of the art electronic device research. In the process of managing and performing on the project, UES has provided a wide variety of scientific and engineering talent who worked in-house for the Avionics Laboratory. These personnel worked on many different types of research programs from gas phase microwave driven lasers, CVD and MOCVD of electronic materials to Electronic Device Technology for new devices. The fields of research included MBE and theoretical research in this novel growth technique. Much of the work was slanted towards the rapidly developing technology of GaAs and the general thrust of the research that these tasks started has remained constant. This work was started because the Avionics Laboratory saw a chance to advance the knowledge and level of the current device technology by working in the compounds semiconductor field. UES is pleased to have had the opportunity to perform on this program and is looking forward to future efforts with the Avionics Laboratory.

  9. PERDaix -Proton Electron Radiation Detector Aix-la-Chapelle

    NASA Astrophysics Data System (ADS)

    Schug, David; Schael, Stefan; Yearwood Roper, Gregorio; Bachlechner, Andreas; Beischer, Bastian; Deckenhoff, Mirco; Greim, Roman; Jenniches, Laura; Kucirek, Philipp; Lewke, Ronja; Mai, Carsten; Schug, David; Shchutska, Lesya; Tholen, Heiner; Ulrich, Jascha; Wienkenhoever, Jens; Zimmermann, Nikolas

    For the purpose of understanding recent cosmic ray measurements in the energy region below 10 GeV it is important to obtain good knowledge of the charge-sign dependent modulation caused by interplanetary magnetic fields. Existing three-dimensional time-dependent models of the heliosphere can be constrained further using series of measurements of the low-energy cosmic ray fluxes over the course of a solar cycle. Following the measurements of the positron fraction from AESOP in 2006 and 2009, we present a new light-weighted spectrometer which is under construction in Aachen for measuring helium, proton, positron and electron fluxes. The detector is designed to measure in the energy range between 0.5 GeV and 5 GeV and identify helium, protons, electrons and positrons. The detector consists of a spectrometer made up of a permanent magnet and a scintillating fiber tracking detector, a transition radiation detector and a time of flight system with a total weight of approximately 30kg. We applied successfully for a flight on a stratosphere balloon in late 2010 as part of the German-Swedish Balloon-Borne Experiments for University Students (BEXUS) Program.

  10. Methodology for Assessing Radiation Detectors Used by Emergency Responders

    SciTech Connect

    Piotr Wasiolek; April Simpson

    2008-03-01

    The threat of weapons of mass destruction terrorism resulted in the U.S. Department of Homeland Security deploying large quantities of radiation detectors throughout the emergency responder community. However, emergency responders specific needs were not always met by standard health physics instrumentation used in radiation facilities. Several American National Standards Institute standards were developed and approved to evaluate the technical capabilities of detection equipment. Establishing technical capability is a critical step, but it is equally important to emergency responders that the instruments are easy to operate and can withstand the rugged situations they encounter. The System Assessment and Validation for Emergency Responders (SAVER) Program (managed by the U.S. Department of Homeland Security, Office of Grants and Training, Systems Support Division) focuses predominantly on the usability, ergonomics, readability, and other features of the detectors, rather than performance controlled by industry standards and the manufacturers. National Security Technologies, LLC, as a SAVER Technical Agent, conducts equipment evaluations using active emergency responders who are familiar with the detection equipment and knowledgeable of situations encountered in the field, which provides more relevant data to emergency responders.

  11. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, J.H.; Lavietes, A.D.

    1998-05-26

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

  12. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, James H.; Lavietes, Anthony D.

    1998-05-29

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

  13. Wire-chamber radiation detector with discharge control

    DOEpatents

    Perez-Mendez, V.; Mulera, T.A.

    1982-03-29

    A wire chamber; radiation detector has spaced apart parallel electrodes and grids defining an ignition region in which charged particles or other ionizing radiations initiate brief localized avalanche discharges and defining an adjacent memory region in which sustained glow discharges are initiated by the primary discharges. Conductors of the grids at each side of the memory section extend in orthogonal directions enabling readout of the X-Y coordinates of locations at which charged particles were detected by sequentially transmitting pulses to the conductors of one grid while detecting transmissions of the pulses to the orthogonal conductors of the other grid through glow discharges. One of the grids bounding the memory region is defined by an array of conductive elements each of which is connected to the associated readout conductor through a separate resistance. The wire chamber avoids ambiguities and imprecisions in the readout of coordinates when large numbers of simultaneous or; near simultaneous charged particles have been detected. Down time between detection periods and the generation of radio frequency noise are also reduced.

  14. Studies of high temperature superconductors as radiation detectors

    NASA Astrophysics Data System (ADS)

    Qiu, A.; Bhattarai, A. R.; Dahlberg, E. D.; Khan, M. Asif; Moloni, K.; van Hove, James M.

    1992-12-01

    Both DyBaCuO (DBCO) and YBaCuO (YBCO) films deposited on a variety of substrates have been investigated for their applicability as detectors of high frequency radiation. Both 10 GHz and infrared radiation (IR) were used as the high frequency radiation source. The measurements consisted of monitoring the temperature dependent resistance of superconducting films both in the presence and absence of radiation. This investigation shows that because the superconducting transition temperature is sensitive to the magnitude of the current in the film, the temperature dependence of the bolometric response is slightly tunable. In addition, effects of radiation on the current voltage characteristics below T superconducting were studied. This study found that films in this regime could also serve as radiation detectors. The substrates used included MgO, SiO, LaAlO(subscript 3), and SrTiO(subscript 3). The results obtained were independent of the substrate except for the width of the resistive transition. Disorder in the films as characterized by the resistive transition, affected the microwave more than the IR response.

  15. Three-dimensional architecture for solid state radiation detectors

    DOEpatents

    Parker, Sherwood

    1999-01-01

    A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals.

  16. Three-dimensional architecture for solid state radiation detectors

    DOEpatents

    Parker, S.

    1999-03-30

    A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals. 45 figs.

  17. Improved gas mixtures for gas-filled radiation detectors

    DOEpatents

    Christophorou, L.G.; McCorkle, D.L.; Maxey, D.V.; Carter, J.G.

    1980-03-28

    Improved binary and ternary gas mixtures for gas-filled radiation detectors are provided. The components are chosen on the basis of the principle that the first component is one molecular gas or mixture of two molecular gases having a large electron scattering cross section at energies of about 0.5 eV and higher, and the second component is a noble gas having a very small cross section at and below about 1.0 eV, whereby fast electrons in the gaseous mixture are slowed into the energy range of about 0.5 eV where the cross section for the mixture is small and hence the electron mean free path is large. The reduction in both the cross section and the electron energy results in an increase in the drift velocity of the electrons in the gas mixtures over that for the separate components for a range of E/P (pressure-reduced electric field) values. Several gas mixtures are provided that provide faster response in gas-filled detectors for convenient E/P ranges as compared with conventional gas mixtures.

  18. Gas mixtures for gas-filled radiation detectors

    DOEpatents

    Christophorou, Loucas G.; McCorkle, Dennis L.; Maxey, David V.; Carter, James G.

    1982-01-05

    Improved binary and ternary gas mixtures for gas-filled radiation detectors are provided. The components are chosen on the basis of the principle that the first component is one molecular gas or mixture of two molecular gases having a large electron scattering cross section at energies of about 0.5 eV and higher, and the second component is a noble gas having a very small cross section at and below about 1.0 eV, whereby fast electrons in the gaseous mixture are slowed into the energy range of about 0.5 eV where the cross section for the mixture is small and hence the electron mean free path is large. The reduction in both the cross section and the electron energy results in an increase in the drift velocity of the electrons in the gas mixtures over that for the separate components for a range of E/P (pressure-reduced electric field) values. Several gas mixtures are provided that provide faster response in gas-filled detectors for convenient E/P ranges as compared with conventional gas mixtures.

  19. Development of CdZnTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Bolotnikov, Aleksey; Camarda, Giuseppe; Hossain, Anwar; Kim, Ki Hyun; Yang, Ge; Gul, Rubi; Cui, Yonggang; James, Ralph B.

    2011-08-01

    Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

  20. Radiation detector device for rejecting and excluding incomplete charge collection events

    SciTech Connect

    Bolotnikov, Aleksey E.; De Geronimo, Gianluigi; Vernon, Emerson; Yang, Ge; Camarda, Giuseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B.

    2016-05-10

    A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.

  1. Electrical delay line multiplexing for pulsed mode radiation detectors

    NASA Astrophysics Data System (ADS)

    Vinke, Ruud; Yeom, Jung Yeol; Levin, Craig S.

    2015-04-01

    Medical imaging systems are composed of a large number of position sensitive radiation detectors to provide high resolution imaging. For example, whole-body Positron Emission Tomography (PET) systems are typically composed of thousands of scintillation crystal elements, which are coupled to photosensors. Thus, PET systems greatly benefit from methods to reduce the number of data acquisition channels, in order to reduce the system development cost and complexity. In this paper we present an electrical delay line multiplexing scheme that can significantly reduce the number of readout channels, while preserving the signal integrity required for good time resolution performance. We experimented with two 4 × 4 LYSO crystal arrays, with crystal elements having 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm dimensions, coupled to 16 Hamamatsu MPPC S10931-050P SiPM elements. Results show that each crystal could be accurately identified, even in the presence of scintillation light sharing and inter-crystal Compton scatter among neighboring crystal elements. The multiplexing configuration degraded the coincidence timing resolution from ∼243 ps FWHM to ∼272 ps FWHM when 16 SiPM signals were combined into a single channel for the 4 × 4 LYSO crystal array with 3 mm × 3 mm × 20 mm crystal element dimensions, in coincidence with a 3 mm × 3 mm × 5 mm LYSO crystal pixel. The method is flexible to allow multiplexing configurations across different block detectors, and is scalable to an entire ring of detectors.

  2. Electrical delay line multiplexing for pulsed mode radiation detectors.

    PubMed

    Vinke, Ruud; Yeom, Jung Yeol; Levin, Craig S

    2015-04-07

    Medical imaging systems are composed of a large number of position sensitive radiation detectors to provide high resolution imaging. For example, whole-body Positron Emission Tomography (PET) systems are typically composed of thousands of scintillation crystal elements, which are coupled to photosensors. Thus, PET systems greatly benefit from methods to reduce the number of data acquisition channels, in order to reduce the system development cost and complexity. In this paper we present an electrical delay line multiplexing scheme that can significantly reduce the number of readout channels, while preserving the signal integrity required for good time resolution performance. We experimented with two 4 × 4 LYSO crystal arrays, with crystal elements having 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm dimensions, coupled to 16 Hamamatsu MPPC S10931-050P SiPM elements. Results show that each crystal could be accurately identified, even in the presence of scintillation light sharing and inter-crystal Compton scatter among neighboring crystal elements. The multiplexing configuration degraded the coincidence timing resolution from ∼243 ps FWHM to ∼272 ps FWHM when 16 SiPM signals were combined into a single channel for the 4 × 4 LYSO crystal array with 3 mm × 3 mm × 20 mm crystal element dimensions, in coincidence with a 3 mm × 3 mm × 5 mm LYSO crystal pixel. The method is flexible to allow multiplexing configurations across different block detectors, and is scalable to an entire ring of detectors.

  3. Electrical delay line multiplexing for pulsed mode radiation detectors

    PubMed Central

    Vinke, Ruud; Yeom, Jung Yeol; Levin, Craig S.

    2015-01-01

    Medical imaging systems are composed of a large number of position sensitive radiation detectors to provide high resolution imaging. For example, whole-body Positron Emission Tomography (PET) systems are typically composed of thousands of scintillation crystal elements, which are coupled to photosensors. Thus, PET systems greatly benefit from methods to reduce the number of data acquisition channels, in order to reduce the system development cost and complexity. In this paper we present an electrical delay line multiplexing scheme that can significantly reduce the number of readout channels, while preserving the signal integrity required for good time resolution performance. We experimented with two 4 × 4 LYSO crystal arrays, with crystal elements having 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm dimensions, coupled to 16 Hamamatsu MPPC S10931-050P SiPM elements. Results show that each crystal could be accurately identified, even in the presence of scintillation light sharing and inter-crystal Compton scatter among neighboring crystal elements. The multiplexing configuration degraded the coincidence timing resolution from ~ 243 ps FWHM to ~272 ps FWHM when 16 SiPM signals were combined into a single channel for the 4 × 4 LYSO crystal array with 3 mm × 3 mm × 20 mm crystal element dimensions, in coincidence with a 3 mm × 3 mm × 5 mm LYSO crystal pixel. The method is exible to allow multiplexing configurations across different block detectors, and is scalable to an entire ring of detectors. PMID:25768002

  4. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    SciTech Connect

    Jing, Tao

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  5. CONCORD: comparison of cosmic radiation detectors in the radiation field at aviation altitudes

    NASA Astrophysics Data System (ADS)

    Meier, Matthias M.; Trompier, François; Ambrozova, Iva; Kubancak, Jan; Matthiä, Daniel; Ploc, Ondrej; Santen, Nicole; Wirtz, Michael

    2016-05-01

    Space weather can strongly affect the complex radiation field at aviation altitudes. The assessment of the corresponding radiation exposure of aircrew and passengers has been a challenging task as well as a legal obligation in the European Union for many years. The response of several radiation measuring instruments operated by different European research groups during joint measuring flights was investigated in the framework of the CONCORD (COmparisoN of COsmic Radiation Detectors) campaign in the radiation field at aviation altitudes. This cooperation offered the opportunity to measure under the same space weather conditions and contributed to an independent quality control among the participating groups. The CONCORD flight campaign was performed with the twin-jet research aircraft Dassault Falcon 20E operated by the flight facility Oberpfaffenhofen of the German Aerospace Center (Deutsches Zentrum für Luft- und Raumfahrt, DLR). Dose rates were measured at four positions in the atmosphere in European airspace for about one hour at each position in order to obtain acceptable counting statistics. The analysis of the space weather situation during the measuring flights demonstrates that short-term solar activity did not affect the results which show a very good agreement between the readings of the instruments of the different institutes.

  6. Status of radiation damage measurements in room temperature semiconductor radiation detectors

    SciTech Connect

    Franks, L.A.; James, R.B.

    1998-04-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed for the purpose of determining their applicability to space applications. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. CT detectors show resolution losses after fluences of 3 {times} 10{sup 9} p/cm{sup 2} at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 {times} 10{sup 10} n/cm{sup 2}. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10{sup 12} p/cm{sup 2} and with 1.5 GeV protons at fluences up to 1.2 {times} 10{sup 8} p/cm{sup 2}. Neutron exposures at 8 MeV have been reported at fluences up to 10{sup 15} n/cm{sup 2}. No radiation damage was found under these irradiation conditions.

  7. A simulation study investigating a radiation detector utilizing the prompt gamma range verification technique for proton radiotherapy

    NASA Astrophysics Data System (ADS)

    Lau, Andrew David

    Proton therapy has shown to be a viable therapy for radiation oncology applications. The advantages of using protons as compared to photons in the treatments of diseases with radiation are numerous including the ability to deliver overall lower amounts of lethal radiation doses to the patient. This advantage is due to the fundamental interaction mechanism of the incident therapeutic protons with the patient, which produces a characteristic dose-distribution unique only to protons. Unlike photons, the entire proton beam is absorbed within the patent and the dose-distribution's maximum occurs near the end of the proton's path. Protons deliver less dose on the skin and intervening tissues, tighter dose conformality to the disease site, as well as no dose past the target volume, sparring healthy tissue distally in the patient. Current research in proton therapy is geared towards minimizing proton range uncertainty and monitoring in-vivo the location of the proton's path. Monitoring the beam's path serves also to verify which healthy structures/tissues were irradiated and whether the target volume has met the prescription dose. Among the many techniques used for in-vivo proton monitoring, the technique based on the emitted secondary particles, specifically the Prompt Gamma (PG) method, can be used for clinical implementation. This work focuses on developing a radiation detector system for using the PG method by investigating the characterizing the secondary particle field emitted from plastic and water phantoms as well as a radiation detector based on glass materials that exploits the Cherenkov phenomenon.

  8. Dynamic Electrothermal Model of a Sputtered Thermopile Thermal Radiation Detector for Earth Radiation Budget Applications

    NASA Technical Reports Server (NTRS)

    Weckmann, Stephanie

    1997-01-01

    The Clouds and the Earth's Radiant Energy System (CERES) is a program sponsored by the National Aeronautics and Space Administration (NASA) aimed at evaluating the global energy balance. Current scanning radiometers used for CERES consist of thin-film thermistor bolometers viewing the Earth through a Cassegrain telescope. The Thermal Radiation Group, a laboratory in the Department of Mechanical Engineering at Virginia Polytechnic Institute and State University, is currently studying a new sensor concept to replace the current bolometer: a thermopile thermal radiation detector. This next-generation detector would consist of a thermal sensor array made of thermocouple junction pairs, or thermopiles. The objective of the current research is to perform a thermal analysis of the thermopile. Numerical thermal models are particularly suited to solve problems for which temperature is the dominant mechanism of the operation of the device (through the thermoelectric effect), as well as for complex geometries composed of numerous different materials. Feasibility and design specifications are studied by developing a dynamic electrothermal model of the thermopile using the finite element method. A commercial finite element-modeling package, ALGOR, is used.

  9. Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector

    PubMed Central

    Urdaneta, M.; Stepanov, P.; Weinberg, I. N.; Pala, I. R.; Brock, S.

    2013-01-01

    Silicon is a convenient and inexpensive platform for radiation detection, but has low stopping power for x-rays and gamma-rays with high energy (e.g., 100 keV, as used in computed tomography and digital radiography, or 1 MeV, as desired for detection of nuclear materials). We have effectively increased the stopping power of silicon detectors by producing a layer of porous or micro-machined silicon, and infusing this layer with semiconductor quantum dots made of electron-dense materials. Results of prototype detectors show sensitivity to infrared, visible light, and x-rays, with dark current of less than 1 nA/mm2. PMID:24432047

  10. Center for Semiconductor Materials and Device Modeling: expanding collaborative research opportunities between government, academia, and industry

    NASA Astrophysics Data System (ADS)

    Perconti, Philip; Bedair, Sarah S.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

    2016-09-01

    To increase Soldier readiness and enhance situational understanding in ever-changing and complex environments, there is a need for rapid development and deployment of Army technologies utilizing sensors, photonics, and electronics. Fundamental aspects of these technologies include the research and development of semiconductor materials and devices which are ubiquitous in numerous applications. Since many Army technologies are considered niche, there is a lack of significant industry investment in the fundamental research and understanding of semiconductor technologies relevant to the Army. To address this issue, the US Army Research Laboratory is establishing a Center for Semiconductor Materials and Device Modeling and seeks to leverage expertise and resources across academia, government and industry. Several key research areas—highlighted and addressed in this paper—have been identified by ARL and external partners and will be pursued in a collaborative fashion by this Center. This paper will also address the mechanisms by which the Center is being established and will operate.

  11. Using Ionizing Radiation Detectors. Module 11. Vocational Education Training in Environmental Health Sciences.

    ERIC Educational Resources Information Center

    Consumer Dynamics Inc., Rockville, MD.

    This module, one of 25 on vocational education training for careers in environmental health occupations, contains self-instructional materials on using ionizing radiation detectors. Following guidelines for students and instructors and an introduction that explains what the student will learn are three lessons: (1) naming and telling the function…

  12. Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

    DOEpatents

    Conway, Adam; Beck, Patrick R; Graff, Robert T; Nelson, Art; Nikolic, Rebecca J; Payne, Stephen A; Voss, Lars; Kim, Hadong

    2015-04-07

    A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

  13. Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

    SciTech Connect

    McGregor, D.S.; Rojeski, R.A.; Knoll, G.F. ); Terry, F.L. Jr.; East, J. ); Eisen, Y. )

    1994-06-15

    The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.

  14. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  15. Transition Radiation Detector in the D0 colliding beam experiment at Fermilab

    SciTech Connect

    Piekarz, H.

    1995-04-01

    The construction, operation and response of the Transition Radiation Detector (TRD) at DO colliding beam experiment at Fermilab are presented. The use of the TRD signal to enhance electron identification and hadronic rejection in the multiparticle background characteristic for the antiproton-proton interactions at the center-of-mass energy of 1.8 TeV is also described and results are discussed.

  16. Examination results of the Three Mile Island radiation detector HP-R-212

    SciTech Connect

    Mueller, G M

    1984-01-01

    Area radiation detector HP-R-212 was removed from the Three Mile Island containment building on November 13, 1981. The detector apparently started to fail during November 1979 and by the first part of December 1979 the detector readings had degraded from 1 R/h to 20 mR/h. This report discusses the cause of ailure, detector radiation measurement characteristics, and our estimates of the total gamma radiation dose received by the detector electronics.

  17. Quantum Confined Semiconductors - In-House Interim Research

    DTIC Science & Technology

    2013-04-01

    15. SUBJECT TERMS quantum dots, graphene thin film, nanoparticles, fourier spectroscopy 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...carried out with the expressions of Varshni and Fan revealed limited accuracy of the Varshni fitting parameters. Evidence is presented that...biological labeling, and photovoltaics !-4 PbS quannun dots (QDs) attract ongoing research activities. Particularly, the technologically relevant

  18. Radiation detector

    DOEpatents

    Fultz, B.T.

    1980-12-05

    Apparatus is provided for detecting radiation such as gamma rays and x-rays generated in backscatter Moessbauer effect spectroscopy and x-ray spectrometry, which has a large window for detecting radiation emanating over a wide solid angle from a specimen and which generates substantially the same output pulse height for monoenergetic radiation that passes through any portion of the detection chamber. The apparatus includes a substantially toroidal chamber with conductive walls forming a cathode, and a wire anode extending in a circle within the chamber with the anode lying closer to the inner side of the toroid which has the least diameter than to the outer side. The placement of the anode produces an electric field, in a region close to the anode, which has substantially the same gradient in all directions extending radially from the anode, so that the number of avalanche electrons generated by ionizing radiation is independent of the path of the radiation through the chamber.

  19. Radiation detector

    DOEpatents

    Fultz, Brent T.

    1983-01-01

    Apparatus is provided for detecting radiation such as gamma rays and X-rays generated in backscatter Mossbauer effect spectroscopy and X-ray spectrometry, which has a large "window" for detecting radiation emanating over a wide solid angle from a specimen and which generates substantially the same output pulse height for monoenergetic radiation that passes through any portion of the detection chamber. The apparatus includes a substantially toroidal chamber with conductive walls forming a cathode, and a wire anode extending in a circle within the chamber with the anode lying closer to the inner side of the toroid which has the least diameter than to the outer side. The placement of the anode produces an electric field, in a region close to the anode, which has substantially the same gradient in all directions extending radially from the anode, so that the number of avalanche electrons generated by ionizing radiation is independent of the path of the radiation through the chamber.

  20. Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.

    1997-01-01

    Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

  1. Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector.

    PubMed

    Nelson, Kyle A; Geuther, Jeffrey A; Neihart, James L; Riedel, Todd A; Rojeski, Ronald A; Saddler, Jeffrey L; Schmidt, Aaron J; McGregor, Douglas S

    2012-07-01

    A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted light was focused onto an IR sensitive photodiode. Calibrations of reactor pulses were performed using the CdZnTe Pockels cell by measuring the change in the photodiode current, repeated 10 times for each set of reactor pulses, set between 1.00 and 2.50 dollars in 0.50 increments of reactivity.

  2. Some results of test beam studies of Transition Radiation Detector prototypes at CERN

    NASA Astrophysics Data System (ADS)

    Tikhomirov, V. O.; Brooks, T.; Joos, M.; Rembser, C.; Celebi, E.; Gurbuz, S.; Cetin, S. A.; Konovalov, S. P.; Zhukov, K.; Fillipov, K. A.; Romaniouk, A.; Smirnov, S. Yu; Teterin, P. E.; Vorobev, K. A.; Boldyrev, A. S.; Maevsky, A.; Derendarz, D.

    2017-01-01

    Operating conditions and challenging demands of present and future accelerator experiments result in new requirements on detector systems. There are many ongoing activities aimed to develop new technologies and to improve the properties of detectors based on existing technologies. Our work is dedicated to development of Transition Radiation Detectors (TRD) suitable for different applications. In this paper results obtained in beam tests at SPS accelerator at CERN with the TRD prototype based on straw technology are presented. TRD performance was studied as a function of thickness of the transition radiation radiator and working gas mixture pressure.

  3. Role of electrode metallization in performance of semi-insulating GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Dubecký, František; Boháček, Pavol; Sekáčová, Mária; Zaťko, Bohumír; Lalinský, Tibor; Linhart, Vladimír; Šagátová-Perd'ochová, Andrea; Mudroň, Ján; Pospíšil, Stanislav

    2007-06-01

    In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from "detector-grade" bulk SI GaAs are characterized by current-voltage measurements and their detection performance is evaluated from pulse-height spectra of 241Am and 57Co γ-sources. Observed results are evaluated and discussed. Importance of the optimized electrodes technology of SI GaAs detector with good performance is demonstrated.

  4. High-energy cosmic-ray electrons - A new measurement using transition-radiation detectors

    NASA Technical Reports Server (NTRS)

    Hartmann, G.; Mueller, D.; Prince, T.

    1977-01-01

    A new detector for cosmic-ray electrons, consisting of a combination of a transition-radiation detector and a shower detector, has been constructed, calibrated at accelerator beams, and exposed in a balloon flight under 5 g/sq cm of atmosphere. The design of this instrument and the methods of data analysis are described. Preliminary results in the energy range 9-300 GeV are presented. The energy spectrum of electrons is found to be significantly steeper than that of protons, consistent with a long escape lifetime of cosmic rays in the galaxy.

  5. Ultraviolet radiation detector to obtain the rate of particles at different heights

    NASA Astrophysics Data System (ADS)

    Ponce, E.; Flores, E.; Conde, R.

    2016-10-01

    The nature and origin of cosmic rays remains one of the greatest puzzles of modern astrophysics after more than 50 years since their first registration. Several ground experiments have reported the rate registered at its height of operation. To continue with the study of cosmic rays, we propose obtain the rate at different heights in the Earth's atmosphere, developing a small and portable ultraviolet radiation detector, consisting of a scintillation plastic, a PMT, and a fast DAQ system. In this work we present the design and construction of the UV detector and the rate recorded in the Sierra Negra Volcano near Puebla, Mexico (4200 m.a.s.l).

  6. Radiation detector using a bulk high T[sub c] superconductor

    DOEpatents

    Artuso, J.F.; Franks, L.A.; Hull, K.L.; Symko, O.G.

    1993-12-07

    A radiation detector is provided, wherein a bulk high T[sub c] superconducting sample is placed in a magnetic field and maintained at a superconducting temperature. Photons of incident radiation will cause localized heating in superconducting loops of the sample destroying trapped flux and redistributing the fluxons, and reducing the critical current of the loops. Subsequent cooling of the sample in the magnetic field will cause trapped flux redistributed Abrikosov fluxons and trapped Josephson fluxons. The destruction and trapping of the fluxons causes changes in the magnetization of the sample inducing currents in opposite directions in a pickup coil which is coupled by an input coil to an rf SQUID. 4 figures.

  7. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOEpatents

    Majewski, Stanislaw; Kross, Brian J.; Zorn, Carl J.; Majewski, Lukasz A.

    1996-01-01

    An optimized examination system and method based on the Reverse Geometry X-Ray.RTM. (RGX.RTM.) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging.

  8. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOEpatents

    Majewski, S.; Kross, B.J.; Zorn, C.J.; Majewski, L.A.

    1996-10-22

    An optimized examination system and method based on the Reverse Geometry X-Ray{trademark} (RGX{trademark}) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging. 5 figs.

  9. Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

    NASA Astrophysics Data System (ADS)

    Maggioni, G.; Carturan, S.; Fiorese, L.; Pinto, N.; Caproli, F.; Napoli, D. R.; Giarola, M.; Mariotto, G.

    2017-01-01

    This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

  10. Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.; Chen, Liang-Yu

    2007-01-01

    Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

  11. A transition radiation detector for RHIC featuring accurate tracking and dE/dx particle identification

    SciTech Connect

    O`Brien, E.; Lissauer, D.; McCorkle, S.; Polychronakos, V.; Takai, H.; Chi, C.Y.; Nagamiya, S.; Sippach, W.; Toy, M.; Wang, D.; Wang, Y.F.; Wiggins, C.; Willis, W.; Cherniatin, V.; Dolgoshein, B.; Bennett, M.; Chikanian, A.; Kumar, S.; Mitchell, J.T.; Pope, K.

    1991-12-31

    We describe the results of a test ran involving a Transition Radiation Detector that can both distinguish electrons from pions which momenta greater titan 0.7 GeV/c and simultaneously track particles passing through the detector. The particle identification is accomplished through a combination of the detection of Transition Radiation from the electron and the differences in electron and pion energy loss (dE/dx) in the detector. The dE/dx particle separation is most, efficient below 2 GeV/c while particle ID utilizing Transition Radiation effective above 1.5 GeV/c. Combined, the electron-pion separation is-better than 5 {times} 10{sup 2}. The single-wire, track-position resolution for the TRD is {approximately}230 {mu}m.

  12. Radiation detector using a bulk high T.sub.c superconductor

    DOEpatents

    Artuso, Joseph F.; Franks, Larry A.; Hull, Kenneth L.; Symko, Orest G.

    1993-01-01

    A radiation detector (10) is provided, wherein a bulk high T.sub.c superconducting sample (11) is placed in a magnetic field and maintained at a superconducting temperature. Photons of incident radiation will cause localized heating in superconducting loops of the sample destroying trapped flux and redistributing the fluxons, and reducing the critical current of the loops. Subsequent cooling of the sample in the magnetic field will cause trapped flux redistributed Abrikosov fluxons and trapped Josephson fluxons. The destruction and trapping of the fluxons causes changes in the magnetization of the sample inducing currents in opposite directions in a pickup coil (12) which is coupled by an input coil (15) to an rf SQUID (16).

  13. Measurement of a high electrical quality factor in a niobium resonator for a gravitational radiation detector

    NASA Technical Reports Server (NTRS)

    Folkner, W. M.; Moody, M. V.; Richard, J.-P.

    1989-01-01

    The mechanical and electrical quality factors of a 10-g niobium resonator were measured at 4.4 K and were found to be 8.1 x 10 to the 6th, and 3.8 x 10 to the 6th, respectively. The value for the electrical quality factor is high enough for a system operating at 50 mK at a sensitivity level of one phonon. The resonator's low damping properties make it suitable for use as a transducer for a cryogenic three-mode gravitational radiation detector. A practical design is given for the mounting of the resonator on a 2400-kg aluminum-bar detector. Projections are made for the sensitivity of a 2400-kg bar instrumented as a three-mode system with this resonator inductively coupled to a SQUID.

  14. Oxygen ingress study of 3D printed gaseous radiation detector enclosures

    SciTech Connect

    Steer, Christopher A.; Durose, Aaron

    2015-07-01

    As part of our ongoing studies into the potential application of 3D printing techniques to gaseous radiation detectors, we have studied the ability of 3D printed enclosures to resist environmental oxygen ingress. A set of cuboid and hexagonal prism shaped enclosures with wall thicknesses of 4 mm, 6 mm, 8 mm and 10 mm were designed and printed in nylon using a EOSINT P 730 Selective Laser Sintering 3D printer system These test enclosures provide a comparison of different environmental gas ingress for different 3D printing techniques. The rate of change of oxygen concentration was found to be linear, decreasing as the wall thickness increases. It was also found that the hexagonal prism geometry produced a lower rate of change of oxygen concentration compared with the cuboid shaped enclosures. Possible reasons as to why these results were obtained are discussed The implications for the this study for deployable systems are also discussed (authors)

  15. Radiation detectors based on laser sintered Bi 4Ge 3O 12 ceramics

    NASA Astrophysics Data System (ADS)

    Macedo, Zélia Soares; da Silva, Ronaldo Santos; Valerio, Mário Ernesto Giroldo; Hernandes, Antonio Carlos

    2004-06-01

    Laser sintered bismuth germanate (Bi 4Ge 3O 12) ceramics were investigated from the point of view of its potential use in radiation detector devices. The light output, density of trap centers and radiation damage were comparatively discussed for laser sintered ceramic, conventional ceramic and single crystal. The scintillator efficiency of the laser sintered ceramics was 13% higher than that observed for furnace sintered ceramics and the radiation damage levels were the same for both samples up to a dose of 3200 Gy of β radiation. The thermoluminescence results of the samples irradiated with UV and β-rays provided strong indicatives that the inter-grain defects have the same nature of the bulk defects and do not contribute with new traps in the temperature range studied. Furthermore, the density of trapping centers in the laser sintered material was 50% lower than in the conventionally sintered ceramics.

  16. Anomalous effects on radiation detectors and capacitance measurements inside a modified Faraday cage

    NASA Astrophysics Data System (ADS)

    Milián-Sánchez, V.; Mocholí-Salcedo, A.; Milián, C.; Kolombet, V. A.; Verdú, G.

    2016-08-01

    We present experimental results showing certain anomalies in the measurements performed inside a modified Faraday cage of decay rates of Ra-226, Tl-204 and Sr-90/I-90, of the gamma spectrum of a Cs-137 preparation, and of the capacitance of both a class-I multilayer ceramic capacitor and of the interconnection cable between the radiation detector and the scaler. Decay rates fluctuate significantly up to 5% around the initial value and differently depending on the type of nuclide, and the spectrum photopeak increases in 4.4%. In the case of the capacitor, direct capacitance measurements at 100 Hz, 10 kHz and 100 kHz show variations up to 0.7%, the most significant taking place at 100 Hz. In the case of the interconnection cable, the capacitance varies up to 1%. Dispersion also tends to increase inside the enclosure. However, the measured capacitance variations do not explain the variations observed in decay rates.

  17. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  18. Prototype Radiation Detector Positioning System For The Automated Nondestructive Assay Of Uf6 Cylinders

    SciTech Connect

    Hatchell, Brian K.; Valdez, Patrick LJ; Orton, Christopher R.; Mace, Emily K.

    2011-08-07

    International Atomic Energy Agency (IAEA) inspectors currently perform periodic inspections at uranium enrichment plants to verify UF6 cylinder enrichment declarations. Measurements are typically performed with handheld high-resolution sensors on a sampling of cylinders taken to be representative of the facility’s entire cylinder inventory. These measurements are time-consuming, expensive, and assay only a small fraction of the total cylinder volume. An automated nondestructive assay system capable of providing enrichment measurements over the full volume of the cylinder could improve upon current verification practices in terms of efficiency and assay accuracy. This paper describes an approach denoted the Integrated Cylinder Verification Station (ICVS) that supports 100% cylinder verification, provides volume-averaged cylinder enrichment assay, and reduces inspector manpower needs. To allow field measurements to be collected to validate data collection algorithms, a prototype radiation detector positioning system was constructed. The system was designed to accurately position an array of radiation detectors along the length of a cylinder to measure UF6 enrichment. A number of alternative radiation shields for the detectors were included with the system. A collimated gamma-ray spectrometer module that allows translation of the detectors in the surrounding shielding to adjust the field of view, and a collimating plug in the end to further reduce the low-energy field of view, were also developed. Proof-of-principle measurements of neutron and high-energy gamma-ray signatures, using moderated neutron detectors and large-volume spectrometers in a fixed-geometry, portal-like configuration, supported an early assessment of the viability of the concept. The system has been used successfully on two testing campaigns at an AREVA fuel fabrication plant to scan over 30 product cylinders. This paper will describe the overall design of the detector positioning system and

  19. Improved fabrication of HgI/sub 2/ nuclear radiation detectors by machine-cleaving

    SciTech Connect

    Levi, A.; Burger, A.; Schieber, M.; Vandenberg, L.; Yellon, W.B.; Alkire, R.W.

    1982-01-01

    The perfection of machine-cleaved sections from HgI/sub 2/ bulk crystals was examined. The perfection of the machine-cleaved sections as established by gamma diffraction rocking curves was found to be much better than the perfection of hand-cleaved sections or as grown thin platelets, reaching a perfection similar to that of the wire-sawn sections of HgI/sub 2/. A correlation between the perfection and the thickness of the machine-cleaved section was also found, i.e., the thicker the cleaved-section the more perfect it is. The reproducibility of the fabrication was significantly improved by using machine cleaving in the process of fabrication. Large single crystals of HgI/sub 2/ weighing 20 to 200 g, can be grown from the vapor phase using the TOM Technique. In order to fabricate nuclear radiation detectors from these single crystals, thin sections of about 0.4 to 0.8 mm thickness have to be prepared. Up till now, the state-of-the-art of fabricating HgI/sub 2/ nuclear radiation detectors involved two methods to get thin sections from the large single crystals: (1) hand-cleaving using a razor-blade and (2) solution wire sawing. The chemical wire sawing method involves a loss of about 50% of the crystal volume and is usually followed by a chemical polishing process which involves a significant loss of volume of the original volume. This procedure is complicated and wasteful. The traditional fabrication method, i.e., hand-cleaving followed by rapid nonselective chemical etching, is simpler and less wasteful.

  20. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin [Pullman, WA; Jones, Kelly [Colfax, WA; Ciampi, Guido [Watertown, MA

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  1. Properties of thin film radiation detectors and their application to dosimetry and quality assurance in x-ray imaging

    NASA Astrophysics Data System (ADS)

    Elshahat, Bassem

    The characteristics of two different types of thin-film radiation detectors are experimentally investigated: organic photovoltaic cells (OPV) and a new self-powered detector that operates based on high-energy secondary electrons (HEC). Although their working principles are substantially different, they both can be used for radiation detection and image formation in medical applications. OPVs with different active layer material thicknesses and aluminum electrode areas were fabricated. The OPV cell consisted of P3HT: PCBM photoactive materials, composed of donor and acceptor semiconducting organic materials, sandwiched between an aluminum electrode as anode and an indium tin oxide (ITO) electrode as a cathode. The detectors were exposed to 60150 kVp x rays, which generated photocurrent in the active layer. The electric charge production in the OPV cells was measured. The net current as function of beam energy (kVp) was proportional to ~1/kVp0.45 when adjusted for x-ray beam output. The best combination of parameters for these cells was 270-nm active layer thicknesses for 0.7cm-2 electrode area. The measured current ranged from about 0.7 to 2.4 nA/cm2 for 60-150 kVp, corresponding to about 0.09 -- 0.06 nA/cm2/mGy, respectively, when adjusted for the output x-ray source flux. The HEC detection concept was recently proposed and experimentally demonstrated by a UML/HMS research group. HEC detection employs direct conversion of high-energy electron current to detector signal without external power and amplification. The potential of using HEC detectors for diagnostic imaging application was investigated by using a heterogeneous phantom consisting of a water cylinder with Al and wax rod inserts.

  2. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    SciTech Connect

    Cho, Gyuseong.

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  3. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect

    GLASER, EVAN

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  4. Introduction to fifth international workshop on mercuric iodide nuclear radiation detectors

    SciTech Connect

    Schieber, M.

    1982-01-01

    Mercuric iodide is a wide bandgap semiconductor, with Eg approx. = 2.14 eV at room temperature. Therefore, HgI/sub 2/ is totally different from the well-studied, narrower gap, elemental semiconductors such as Si and Ge, and also different in its physical and chemical properties from the known semiconductor binary zinc-blend compounds such as GaAs or InP. The purpose of studies in the last decade was to further our understanding of HgI/sub 2/; recent progress is reported. (WHK)

  5. Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

    NASA Astrophysics Data System (ADS)

    Wang, Xin; Wang, Cuiluan; Wu, Xia; Zhu, Lingni; Jing, Hongqi; Ma, Xiaoyu; Liu, Suping

    2017-02-01

    Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

  6. Cumulative effects of Te precipitates in CdZnTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Camarda, G. S.; Carini, G. A.; Cui, Y.; Li, L.; James, R. B.

    2007-02-01

    High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ˜20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance.

  7. SoftWare for Optimization of Radiation Detectors, SWORD Version 5.0.

    SciTech Connect

    STRICKMAN, MARK S.

    2013-10-23

    Version 05 SoftWare for Optimization of Radiation Detectors (SWORD) is a framework to allow easy simulation and evaluation of radiation detection systems. It is targeted at system designers, who want to evaluate and optimize system parameters without actually building hardware first, at sponsors who need to evaluate proposed or actual system designs independent of the supplier, without having access to actual hardware, and at operators who want to use simulation to evaluate observed phenomena. SWORD is vertically integrated and modular. It allows users to define their own radiation detection instruments by building them from basic geometric “objects” and assigning those objects materials, detection, and/or radioactive emission properties. This process is accomplished by a CAD-like graphical user interface, in which objects may be defined, translated, rotated, grouped, arrayed, and/or nested to produce compound objects. In addition to providing the ability to build a detection system model from scratch, SWORD provides a library of “standard” detector design objects that can be used “as is” or modified by the user.

  8. Precise dose evaluation using a commercial phototransistor as a radiation detector.

    PubMed

    Santos, L A P; Barros, F R; Filho, J A; da Silva, E F

    2006-01-01

    An experimental arrangement and a circuitry based on an NPN phototransistor-type silicon radiation detector have been used for evaluating the X-ray beam dose in the diagnostic range. The circuitry was built to allow alteration of the electric field in the phototransistor internal structure, with some devices that have an available base connection. By changing the transistor base bias it is possible to alter its operation point to obtain a response gain from the selected photon energy range. In this way we have made an electronic energy-domain discretisation and we are investigating a model to calculate the dose contribution from each energy discretised into 10 keV steps. The method has been tested in filtered radiation beams generated from an HF-160 Pantak X-ray unit and compared with the usual dosimetry method. Our results have demonstrated that it is possible to make such a dose deconvolution from 40 to 140 keV energies by controlling the phototransistor base bias properly.

  9. Preliminary Results from an Investigation into Nanostructured Nuclear Radiation Detectors for Non-Proliferation Applications

    SciTech Connect

    ,

    2012-10-01

    In recent years, the concept of embedding composite scintillators consisting of nanosized inorganic crystals in an organic matrix has been actively pursued. Nanocomposite detectors have the potential to meet many of the homeland security, non-proliferation, and border and cargo-screening needs of the nation and, by virtue of their superior nuclear identification capability over plastic, at roughly the same cost as plastic, have the potential to replace all plastic detectors. Nanocomposites clearly have the potential of being a gamma ray detection material that would be sensitive yet less expensive and easier to produce on a large scale than growing large, whole crystals of similar sensitivity. These detectors would have a broad energy range and a sufficient energy resolution to perform isotopic identification. The material can also be fabricated on an industrial scale, further reducing cost. This investigation focused on designing and fabricating prototype core/shell and quantum dot (QD) detectors. Fourteen core/shell and four QD detectors, all with the basic consistency of a mixture of nanoparticles in a polymer matrix with different densities of nanoparticles, were prepared. Nanoparticles with sizes <10 nm were fabricated, embedded in a polystyrene matrix, and the resultant scintillators’ radiation detector properties were characterized. This work also attempted to extend the gamma energy response on both low- and high-energy regimes by demonstrating the ability to detect low-energy and high-energy gamma rays. Preliminary results of this investigation are consistent with a significant response of these materials to nuclear radiation.

  10. Control of electric field in CdZnTe radiation detectors by above-bandgap light

    SciTech Connect

    Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P.; Touš, J.; Sellin, P. J.

    2015-04-28

    We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states.

  11. Technical Note: Response measurement for select radiation detectors in magnetic fields

    SciTech Connect

    Reynolds, M.; Fallone, B. G.; Rathee, S.

    2015-06-15

    Purpose: Dose response to applied magnetic fields for ion chambers and solid state detectors has been investigated previously for the anticipated use in linear accelerator–magnetic resonance devices. In this investigation, the authors present the measured response of selected radiation detectors when the magnetic field is applied in the same direction as the radiation beam, i.e., a longitudinal magnetic field, to verify previous simulation only data. Methods: The dose response of a PR06C ion chamber, PTW60003 diamond detector, and IBA PFD diode detector is measured in a longitudinal magnetic field. The detectors are irradiated with buildup caps and their long axes either parallel or perpendicular to the incident photon beam. In each case, the magnetic field dose response is reported as the ratio of detector signals with to that without an applied longitudinal magnetic field. The magnetic field dose response for each unique orientation as a function of magnetic field strength was then compared to the previous simulation only studies. Results: The measured dose response of each detector in longitudinal magnetic fields shows no discernable response up to near 0.21 T. This result was expected and matches the previously published simulation only results, showing no appreciable dose response with magnetic field. Conclusions: Low field longitudinal magnetic fields have been shown to have little or no effect on the dose response of the detectors investigated and further lend credibility to previous simulation only studies.

  12. Intraoperative radioimmunodetection of colorectal tumor with a hand-held radiation detector

    SciTech Connect

    Martin, D.T.; Hinkle, G.H.; Tuttle, S.; Olsen, J.; Nabi, H.; Houchens, D.; Thurston, M.; Martin, E.W. Jr.

    1985-12-01

    A hand-held gamma detection probe was used intraoperatively to localize primary and recurrent colorectal tumors in 28 patients 48 to 72 hours after they received an intravenous injection of 2.2 mCi of iodine-131 labeled anticarcinoembryonic antigen polyclonal baboon antibody. Preoperative evaluation included determination of serum carcinoembryonic antigen, barium enema, colonoscopy, chest film, computerized axial tomography, liver, spleen, and bone scans, and endoscopy when indicated. Preoperative whole-body imaging correctly localized primary tumors in only 33 percent of the patients, whereas it correctly demonstrated tumor in 64 percent of those with recurrent disease. Intraoperative tumor-to-background ratios derived from the detector probe were elevated in all patients, averaging 3.97:1 in primary lesions and 4.18:1 in recurrent tumors. Postoperatively, carcinoembryonic antigen was localized in tissues with the avidin-biotin peroxidase staining technique to confirm intraoperative readings. Variations in stain uptake in a patient could be correlated with variations in radiation detector readings in the same patient. Results support our previous work in nude mice, demonstrating the improved sensitivity and specificity of the hand-held gamma detection device over whole-body imaging for intraoperative localization of immunoradiolabeled tumors.

  13. Data-driven exploration of the ionization-phonon partitioning in scintillating radiation detector materials

    SciTech Connect

    Ferris, Kim F.; Webb-Robertson, Bobbie-Jo M.; Jordan, David V.; Jones, Dumont M.

    2008-06-01

    An information-based approach to scintillating materials development has been applied to ranking the alkali halide and alkali earth halide series in terms of their energy conversion efficiency. The efficiency of scintillating radiation detection materials can be viewed as the product of a consecutive series of electronic processes (energy conversion, transfer, and luminescence) as outlined by Lempicki and others. Relevant data are relatively sparse, but sufficient for the development of forward mapping of materials properties through materials signatures. These mappings have been used to explore the limits of the K ratio in the Lempicki model with chemical composition, and examine its relationship with another common design objective, density. The alkali halides and alkali earth halide compounds separate themselves into distinct behavior classes favoring heavier cations and anions for improved K ratio. While the coupling of ionization is strongly related to the optical phonon modes, both dielectric and band gap contributions cannot be ignored. When applied within a candidate screen, the resulting model for K imposes design rules—simple structural restrictions—on scintillating radiation detector materials.

  14. Performance of the Time Expansion Chamber / Transition Radiation Detector in PHENIX Experiment at RHIC

    NASA Astrophysics Data System (ADS)

    Luiz Silva, Cesar

    2004-10-01

    The Time Expansion Chamber / Transition Radiation Detector (TEC/TRD) in the PHENIX Experiment at RHIC measures ionization losses (dE/dX) and transition radiation from charged particles produced by beam collisions. It is designed to perform tracking and identification for charged particles on very high particle multiplicity environment. The TEC/TRD consists of 24 wire chambers readout on both sides filled with recycled Xe-based gas mixture. This wire chamber configuration, besides providing measurements of ionization losses for charged particles, can absorb X-Ray photons generated by transition radiation from incident particles with γ>1000 crossing fiber radiators placed at the entrance of the chambers. This allows TEC/TRD to distinguish electrons from the huge pion signal produced over a broad momentum range (1GeV/c

  15. Gd2O3:Eu3+/PPO/POPOP/PS composites for digital imaging radiation detectors

    NASA Astrophysics Data System (ADS)

    Oliveira, J.; Martins, P. M.; Martins, P.; Correia, V.; Rocha, J. G.; Lanceros-Mendez, S.

    2015-11-01

    Polymer-based scintillator composites have been produced by combining polystyrene (PS) and Gd2O3:Eu3+ scintillator nanoparticles. Polystyrene has been used since it is a flexible and stable binder matrix, resistant to thermal and light deterioration and with suitable optical properties. Gd2O3:Eu3+ has been selected as scintillator material due to its wide band gap, high density and visible light yield. The optical, thermal and electrical characteristics of the composites were studied as a function of filler content, together with their performance as scintillator material. Additionally 1 wt.% of 2,5-diphenyloxazole (PPO) and 0.01 wt.% of 1,4 di[2-(5phenyloxazolyl)]benzene (POPOP) were introduced in the polymer matrix in order to strongly improve light yield, i.e., the measured intensity of the output visible radiation, under X-ray irradiation. Increasing scintillator filler concentration (from 0.25 to 7.5 wt.%) increases scintillator light yield and decreases the optical transparency of the composite. The addition of PPO and POPOP strongly increased the overall transduction performance of the composite due to specific absorption and re-emission processes. It is thus shown that Gd2O3:Eu3+/PPO/POPOP/PS composites with 0.25 wt.% of scintillator content with fluorescence molecules are suitable for the development of innovative large-area X-ray radiation detectors with huge demand from the industries.

  16. Research progress in radiation detectors, pattern recognition programs, and radiation damage determination in DNA

    NASA Technical Reports Server (NTRS)

    Baily, N. A.

    1973-01-01

    The radiological implications of statistical variations in energy deposition by ionizing radiation were investigated in the conduct of the following experiments: (1) study of the production of secondary particles generated by the passage of the primary radiation through bone and muscle; (2) the study of the ratio of nonreparable to reparable damage in DNA as a function of different energy deposition patterns generated by X rays versus heavy fast charged particles; (3) the use of electronic radiography systems for direct fluoroscopic tomography and for the synthesis of multiple planes and; (4) the determination of the characteristics of systems response to split fields having different contrast levels, and of minimum detectable contrast levels between the halves under realistic clinical situations.

  17. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  18. Scientific/Technical Report: Improvement in compensation and crystal growth of cadmium zinc telluride radiation detectors

    SciTech Connect

    Kelvin G. Lynn; Kelly A. Jones

    2007-05-19

    Comparison of actual accomplishments with goals and objectives: (1) Growth of 12 ingots--Washington State University (WSU) more than met this goal for the project by growing 12 final ingots for the year. Nine of the twelve crystal growth ingots resolved gamma radiation at room temperature. The other three ingots where resistivity of {approx} 3 x 10{sup 8} Ohm*cm for CG32a, CG36, and CG42 lower than expected, however none of these were tried with blocking contacts. All ingots were evaluated from tip to heel. In these three cases, the group III, dopant Aluminum (Al) was not detected to a level to compensate the Cd vacancies in the cadmium zinc telluride (CZT) thus the ingots were lower resistivity. The nine ingots that were successful radiation detectors averaged a bulk resistivity of 1.25 x 10{sup 10} Ohm*cm and with a average {mu}{tau} product for electrons of {approx} 2 x 10{sup -4} cm{sup 2}/V with a 1/4 microsecond shaping time with samples {approx}2 mm in thickness. (2) Attempt new compensations techniques--WSU also met this goal. Several doping schemes were attempted and investigated with various amounts of excess Tellurium added to the growth. The combination of Al and Erbium (Er) were first attempted for these ingots and subsequently CG34 was grown with Al, Er and Holmium. These compensation techniques produced radiation detectors and are currently under investigation. These growths were made with significant different doping levels to determine the affect of the dopants. CG43 was doped with Indium and Er. Indium was introduced instead of Al to determine if Indium is more soluble than Al for CZT and was less oxidized. This may decrease the amount of low resistivity ingots grown by doping with Indium instead of Al. (3) Grow large single crystals--Several changes in approach occurred in the crystal growth furnace. Steps were taken to maximize the crystal growth interface during growth by modifying liners, quartz, heat sinks, crucibles and various growth steps

  19. Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

    DOEpatents

    Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.

    2004-04-27

    A radiation detector system includes detectors having different properties (sensitivity, energy resolution) which are combined so that excellent spectral information may be obtained along with good determinations of the radiation field as a function of position.

  20. PRD3000: A novel Personnel Radiation Detector with Radiation Exposure Monitoring

    SciTech Connect

    Fallu-Labruyere, A.; Micou, C.; Schulcz, F.; Fellinger, J.

    2015-07-01

    PRD3000{sup TM} is a novel Personal Radiation Detector (PRD) with personnel radiation dose exposure monitoring. It is intended for First Responders, Law Enforcement, Customs Inspectors protecting critical infrastructures for detecting unexpected radioactive sources, who also need real time Hp(10) dose equivalent information. Traditional PRD devices use scintillator materials instrumented through either a photomultiplier tube or a photodiode photodetector. While the former is bulky and sensitive to magnetic fields, the latter has to compromise radiation sensitivity and energy threshold given its current noise per unit of photo-detection surface. Recently, solid state photodetectors (SiPM), based on arrays of Geiger operated diodes, have emerged as a scalable digital photodetector for photon counting. Their strong breakdown voltage temperature dependence (on the order of tens of milli-volts per K) has however limited their use for portable instruments where strong temperature gradients can be experienced, and limited power is available to temperature stabilize. The PRD3000 is based on the industry standard DMC3000 active dosimeter that complies with IEC 61526 Ed. 3 and ANSI 42.20 for direct reading personal dose equivalent meters and active personnel radiation monitors. An extension module is based on a CsI(Tl) scintillator readout by a temperature compensated SiPM. Preliminary nuclear tests combined with a measured continuous operation in excess of 240 hours from a single AAA battery cell indicate that the PRD3000 complies with the IEC 62401 Ed.2 and ANSI 42.32 without sacrificing battery life time. We present a summary of the device test results, starting with performance stability over a temperature range of - 20 deg. C to 50 deg. C, false alarm rates and dynamic response time. (authors)

  1. Development of radiation detectors based on hydrogenated amorphous silicon and its alloys

    SciTech Connect

    Hong, Wan-Shick

    1995-04-01

    Hydrogenated amorphous silicon and related materials have been applied to radiation detectors, utilizing their good radiation resistance and the feasibility of making deposits over a large area at low cost. Effects of deposition parameters on various material properties of a-Si:H have been studied to produce a material satisfying the requirements for specific detection application. Thick(-~50 μm), device quality a-Si:H p-i-n diodes for direct detection of minimum ionizing particles have been prepared with low internal stress by a combination of low temperature growth, He-dilution of silane, and post annealing. The structure of the new film contained voids and tiny crystalline inclusions and was different from the one observed in conventional a-Si:H. Deposition on patterned substrates was attempted as an alternative to controlling deposition parameters to minimize substrate bending and delamination of thick a-Si:H films. Growth on an inversed-pyramid pattern reduced the substrate bending by a factor of 3 ≈ 4 for the same thickness film. Thin (0.1 ≈ 0.2 μm) films of a-Si:H and a-SiC:H have been applied to microstrip gas chambers to control gain instabilities due to charges on the substrate. Light sensitivity of the a-Si:H sheet resistance was minimized and the surface resistivity was successfully` controlled in the range of 1012 ≈ 1017 Ω/(four gradient) by carbon alloying and boron doping. Performance of the detectors with boron-doped a-Si:C:H layers was comparable to that of electronic-conducting glass. Hydrogen dilution of silane has been explored to improve electrical transport properties of a-Si:H material for high speed photo-detectors and TFT applications.

  2. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  3. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  4. Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206

    SciTech Connect

    Sopori, B.

    2011-02-01

    This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

  5. Space radiation dosimetry: An optically stimulated luminescence radiation detector for low-Earth orbit

    NASA Astrophysics Data System (ADS)

    Gaza, Ramona

    Scope and method of study. The purpose of this study was to investigate Al2O3:C as a potential optically stimulated luminescence (OSL) radiation detector for Low-Earth Orbit. The OSL response of Al2O3:C was characterized in terms of its luminescence efficiency for a variety of heavy charged particles (HCPs) with features similar to those found in space. The HCP irradiations were performed using the HIMAC accelerator at Chiba (Japan), the proton facility at Loma Linda (CA) and the NSRL facility at Brookhaven (NY). The OSL curves were further investigated to obtain information about the 'mean efficiency' and 'mean LET', parameters that needed to assess the absorbed dose and the dose equivalent. This analysis was applied for simulated mixed radiation fields (ICCHIBAN) and actual space radiation exposures (i.e., STS-105, BRADOS, and TRACER). In parallel, the thermoluminescence response of dosimetry materials LiF:Mg,Ti and CaF2:Tm was also studied. Findings and conclusions. The OSL efficiency of Al2O 3:C exposed to HCPs was found to decrease with increasing linear energy transfer (LET) for the investigated LET range (i.e., from 0.4 keV/mum to 459 keV/mum). For simulated mixed radiation fields with a strong low-LET component, the results indicated that the OSL calibration methods (i.e., tau-method and R-method) can be used with good accuracy to obtain information about the absorbed dose and the dose equivalent. Nevertheless, for mixed fields with a strong high-LET component these methods will give larger errors when estimating the absorbed dose and the dose equivalent. For actual space radiation exposures, the results indicated that different materials/calibration methods (i.e., the LiF:Mg,Ti/HTR-method and the CaF2:Tm/peak 5 + 6/peak 3-method) give different results in terms of 'mean efficiency' and 'mean LET'. This was explained by suggesting that none of the above calibration methods can give information about the true average LET of the incident radiation, but rather

  6. Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Adams, Aaron Lee

    Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

  7. Comparison of cosmic rays radiation detectors on-board commercial jet aircraft.

    PubMed

    Kubančák, Ján; Ambrožová, Iva; Brabcová, Kateřina Pachnerová; Jakůbek, Jan; Kyselová, Dagmar; Ploc, Ondřej; Bemš, Július; Štěpán, Václav; Uchihori, Yukio

    2015-06-01

    Aircrew members and passengers are exposed to increased rates of cosmic radiation on-board commercial jet aircraft. The annual effective doses of crew members often exceed limits for public, thus it is recommended to monitor them. In general, the doses are estimated via various computer codes and in some countries also verified by measurements. This paper describes a comparison of three cosmic rays detectors, namely of the (a) HAWK Tissue Equivalent Proportional Counter; (b) Liulin semiconductor energy deposit spectrometer and (c) TIMEPIX silicon semiconductor pixel detector, exposed to radiation fields on-board commercial Czech Airlines company jet aircraft. Measurements were performed during passenger flights from Prague to Madrid, Oslo, Tbilisi, Yekaterinburg and Almaty, and back in July and August 2011. For all flights, energy deposit spectra and absorbed doses are presented. Measured absorbed dose and dose equivalent are compared with the EPCARD code calculations. Finally, the advantages and disadvantages of all detectors are discussed.

  8. Coherent spectroscopy of semiconductors.

    PubMed

    Cundiff, Steven T

    2008-03-31

    The coherent optical response of semiconductors has been the subject of substantial research over the last couple of decades. The interest has been motivated by unique aspects of the interaction between light and semiconductors that are revealed by coherent techniques. The ability to probe the dynamics of charge carriers has been a significant driver. This paper presents a review of selected results in coherent optical spectroscopy of semiconductors.

  9. Radiation detection system using semiconductor detector with differential carrier trapping and mobility

    DOEpatents

    Whited, Richard C.

    1981-01-01

    A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

  10. Validation testing of ANSI/IEEE n42.49 standard requirements for personal emergency radiation detectors.

    PubMed

    Pibida, L; Minniti, R; O'Brien, M

    2010-04-01

    Various radiation detectors including electronic personal emergency radiation detectors (PERDs), radiochromic film cards and thermoluminescent dosimeters (TLDs) were used to validate a subset of the radiological test requirements listed in the American National Standards Institute/The Institute of Electrical and Electronic Engineers (ANSI/IEEE) N42.49 standard. The subset of tests included the following: comparing the readout of the detectors with the value given at the National Institute of Standards and Technology (NIST); testing of the alarm settings (when applicable) in air-kerma (or exposure) and air-kerma rate (or exposure rate) mode; and investigating the effect of testing the detectors mounted on a phantom and free in air. The purpose of this work was not to test the performance of the sample of detectors used. Instead, the detectors were used to validate the requirements of the written standard being developed. For this purpose, the performance and response of these instruments were recorded when placed in (137)Cs, and x-ray beams at different air-kerma rates and test conditions. The measurements described in this report were performed at the NIST x-ray and gamma-ray radiation calibration facilities. The data in this report provide a benchmark in support of the development of the ANSI/IEEE N42.49 standard.

  11. Design of a synchrotron radiation detector for the test beam lines at the Superconducting Super Collider Laboratory

    SciTech Connect

    Hutton, R.D.

    1994-01-01

    As part of the particle- and momentum-tagging instrumentation required for the test beam lines of the Superconducting Super Collider (SSC), the synchrotron radiation detector (SRD) was designed to provide electron tagging at momentum above 75 GeV. In a parallel effort to the three test beam lines at the SSC, schedule demands required testing and calibration operations to be initiated at Fermilab. Synchrotron radiation detectors also were to be installed in the NM and MW beam lines at Femilab before the test beam lines at the SSC would become operational. The SRD is the last instrument in a series of three used in the SSC test beam fines. It follows a 20-m drift section of beam tube downstream of the last silicon strip detector. A bending dipole just in of the last silicon strip detector produces the synchrotron radiation that is detected in a 50-mm-square cross section NaI crystal. A secondary scintillator made of Bicron BC-400 plastic is used to discriminate whether it is synchrotron radiation or a stray particle that causes the triggering of the NaI crystal`s photo multiplier tube (PMT).

  12. The ADAQ framework: An integrated toolkit for data acquisition and analysis with real and simulated radiation detectors

    NASA Astrophysics Data System (ADS)

    Hartwig, Zachary S.

    2016-04-01

    The ADAQ framework is a collection of software tools that is designed to streamline the acquisition and analysis of radiation detector data produced in modern digital data acquisition (DAQ) systems and in Monte Carlo detector simulations. The purpose of the framework is to maximize user scientific productivity by minimizing the effort and expertise required to fully utilize radiation detectors in a variety of scientific and engineering disciplines. By using a single set of tools to span the real and simulation domains, the framework eliminates redundancy and provides an integrated workflow for high-fidelity comparison between experimental and simulated detector performance. Built on the ROOT data analysis framework, the core of the ADAQ framework is a set of C++ and Python libraries that enable high-level control of digital DAQ systems and detector simulations with data stored into standardized binary ROOT files for further analysis. Two graphical user interface programs utilize the libraries to create powerful tools: ADAQAcquisition handles control and readout of real-world DAQ systems and ADAQAnalysis provides data analysis and visualization methods for experimental and simulated data. At present, the ADAQ framework supports digital DAQ hardware from CAEN S.p.A. and detector simulations performed in Geant4; however, the modular design will facilitate future extension to other manufacturers and simulation platforms.

  13. A combined surface and bulk TCAD damage model for the analysis of radiation detectors operating at HL-LHC fluences

    NASA Astrophysics Data System (ADS)

    Morozzi, A.; Passeri, D.; Moscatelli, F.; Dalla Betta, G.-F.; Bilei, G. M.

    2016-12-01

    In this work we present the development and the application of a new TCAD modelling scheme to simulate the effects of radiation damage on silicon radiation detectors at the very high fluence levels expected at High Luminosity LHC (up to 2 × 1016 1MeV n/cm2). In particular, we propose a combined approach for the analysis of the surface effects (oxide charge build-up and interface trap states introduction) as well as bulk effects (deep level traps and/or recombination centers introduction). Experimental measurements have been carried out aiming at: i) extraction from simple test structures of relevant parameters to be included within the TCAD model and ii) validation of the new modelling scheme through comparison with measurements of different test structures (e.g. different technologies) before and after irradiation. The good agreements between experimental measurements and simulation findings foster the suitability of the TCAD modelling approach as a predictive tool for investigating the radiation detector behavior at different fluences and operating conditions. This would allow the design and optimization of innovative 3D and planar silicon detectors for future HL-LHC High Energy Physics experiments.

  14. Molecular Semiconductors: An Introduction

    NASA Astrophysics Data System (ADS)

    de Mello, John; Halls, Jonathan James Michael

    2005-10-01

    Introducing the fundamental ideas and concepts behind organic semiconductors, this book provides a clear impression of the broad range of research activities currently underway. Aimed specifically at new entrant doctoral students from a wide variety of backgrounds, including chemistry, physics, electrical engineering and materials science, it also represents an ideal companion text to undergraduate courses in organic semiconductors.

  15. Silicon field-effect transistors as radiation detectors for the Sub-THz range

    SciTech Connect

    But, D. B. Golenkov, O. G.; Sakhno, N. V.; Sizov, F. F.; Korinets, S. V.; Gumenjuk-Sichevska, J. V.; Reva, V. P.; Bunchuk, S. G.

    2012-05-15

    The nonresonance response of silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) with a long channel (1-20 {mu}m) to radiation in the frequency range 43-135 GHz is studied. The transistors are fabricated by the standard CMOS technology with 1-{mu}m design rules. The volt-watt sensitivity and the noise equivalent power (NEP) for such detectors are estimated with the calculated effective area of the detecting element taken into account. It is shown that such transistors can operate at room temperature as broadband direct detectors of sub-THz radiation. In the 4-5 mm range of wavelengths, the volt-watt sensitivity can be as high as tens of kV/W and the NEP can amount to 10{sup -11} - 10{sup -12}W/{radical}Hz . The parameters of detectors under study can be improved by the optimization of planar antennas.

  16. Power monitoring in space nuclear reactors using silicon carbide radiation detectors

    NASA Technical Reports Server (NTRS)

    Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

    2005-01-01

    Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

  17. Physical design and Monte Carlo simulations of a space radiation detector onboard the SJ-10 satellite

    NASA Astrophysics Data System (ADS)

    Liu, Ya-Qing; Wang, Huan-Yu; Cui, Xing-Zhu; Peng, Wen-Xi; Fan, Rui-Rui; Liang, Xiao-Hua; Gao, Ming; Zhang, Yun-Long; Zhang, Cheng-Mo; Zhang, Jia-Yu; Yang, Jia-Wei; Wang, Jin-Zhou; Zhang, Fei; Dong, Yi-Fan; Guo, Dong-Ya; Zhou, Da-Wei

    2015-01-01

    A radiation gene box (RGB) onboard the SJ-10 satellite is a device carrying mice and drosophila cells to determine the biological effects of space radiation environment. The shielded fluxes of different radioactive sources were calculated and the linear energy transfers of γ-rays, electrons, protons and α-particles in the tissue were acquired using A-150 tissue-equivalent plastic. Then, a conceptual model of a space radiation instrument employing three semiconductor sub-detectors for deriving the charged and uncharged radiation environment of the RGB was designed. The energy depositions in the three sub-detectors were classified into 15 channels (bins) in an algorithm derived from the Monte Carlo method. The physical feasibility of the conceptual instrument was also verified by Monte Carlo simulations.

  18. Development of high pressure-high vacuum-high conductance piston valve for gas-filled radiation detectors

    NASA Astrophysics Data System (ADS)

    Prasad, D. N.; Ayyappan, R.; Kamble, L. P.; Singh, J. P.; Muralikrishna, L. V.; Alex, M.; Balagi, V.; Mukhopadhyay, P. K.

    2008-05-01

    Gas-filled radiation detectors need gas filling at pressures that range from few cms of mercury to as high as 25kg/cm2 at room temperature. Before gas-filling these detectors require evacuation to a vacuum of the order of ~1 × 10-5 mbar. For these operations of evacuation and gas filling a system consisting of a vacuum pump with a high vacuum gauge, gas cylinder with a pressure gauge and a valve is used. The valve has to meet the three requirements of compatibility with high-pressure and high vacuum and high conductance. A piston valve suitable for the evacuation and gas filling of radiation detectors has been designed and fabricated to meet the above requirements. The stainless steel body (80mm×160mm overall dimensions) valve with a piston arrangement has a 1/2 inch inlet/outlet opening, neoprene/viton O-ring at piston face & diameter for sealing and a knob for opening and closing the valve. The piston movement mechanism is designed to have minimum wear of sealing O-rings. The valve has been hydrostatic pressure tested up to 75bars and has Helium leak rate of less than 9.6×10-9 m bar ltr/sec in vacuum mode and 2×10-7 mbar ltr/sec in pressure mode. As compared to a commercial diaphragm valve, which needed 3 hours to evacuate a 7 litre chamber to 2.5×10-5 mbar, the new valve achieved vacuum 7.4×10-6mbar in the same time under the same conditions.

  19. Influence of solvothermal synthesis conditions in BiSI nanostructures for application in ionizing radiation detectors

    NASA Astrophysics Data System (ADS)

    Aguiar, I.; Mombrú, M.; Pérez Barthaburu, M.; Bentos Pereira, H.; Fornaro, L.

    2016-02-01

    BiSI belongs to the A V B VI C VII chalcohalides group of compounds. These compounds show several interesting properties such as ferroelectricity, piezoelectricity along the c axis, and photoconductivity. Moreover, BiSI is a potential semiconductor material for room-temperature gamma and x-ray detection, given its band gap of 1.57 eV and its high density, 6.41 g cm-3. In this work we present BiSI nanostructures synthesized by the solvothermal method with the intention of using them for ionizing radiation detection. The solvent was varied to study its influence in morphology, particle size and size distribution. Three different conditions were tested, using either water, monoethylene glycol and a mixture of both solvents. Nanostructures were characterized by XRD to determine the phase obtained and reaction completeness; TEM was used to observe nanostructures morphology, size, size distribution and crystallinity; and finally FT-IR diffuse reflectance was used to study monoethylene glycol presence in the samples. Nanorods in the range of 100-200 nm width were obtained in all samples, but round nanoparticles of around 10 nm in diameter were also detected in samples synthesized only with monoethylene glycol. Samples synthesized in monoethylene glycol were used to fabricate pellets to construct detectors. The detectors responded to ionizing radiation and a resistivity in the order of 1013 Ω cm was estimated. This work proposes, to our knowledge, the first study of BiSI for its application in ionizing radiation detection.

  20. Growth and fabrication method of CdTe and its performance as a radiation detector

    NASA Astrophysics Data System (ADS)

    Park, Soojeong; Kim, Hyojin; Kim, Dojin

    2015-01-01

    We report the nitrogen-monoxide (NO) gas-sensing properties of transparent p-type copper-oxide (CuO) nanorod arrays synthesized by using the hydrothermal method with a CuO nanoparticle seed layer deposited on a glass substrate via sputtering process. We synthesized polycrystalline CuO nanorods measuring 200 to 300 nm in length and 20 to 30 nm in diameter for three controlled molarity ratios of 1:1, 1:2 and 1:4 between copper nitrate trihydrate [Cu(NO2)2·3H2O] and hexamethylenetetramine (C6H12N4). The crystal structures and morphologies of the synthesized CuO nanorod arrays were examined using grazing incidence X-ray diffraction and scanning electron microscopy. The gas-sensing measurements for NO gas in dry air indicated that the CuO nanorodarray-based gas sensors synthesized under hydrothermal condition at a molarity ratio of 1:2 showed the best gas sensing response to NO gas. These CuO nanorod-array gas sensors exhibited a highly sensitive response to NO gas, with a maximum sensitivity of about 650% for 10 ppm NO in dry air at an operating temperature of 100 ℃. These transparent p-type CuO nanorod-array gas sensors have shown a reversible and reliable response to NO gas over a range of operating temperatures. These results indicate certain potential use of p-type oxide semiconductor CuO nanorods as sensing materials for several types of gas sensors, including p — n junction gas sensors.

  1. Evaluation of granulated BGO, GSO:Ce, YAG:Ce, CaF 2:Eu and ZnS:Ag for alpha/beta pulse shape discrimination in a flow-cell radiation detector

    NASA Astrophysics Data System (ADS)

    DeVol, T. A.; Chotoo, S. B.; Fjeld, R. A.

    1999-04-01

    Granulated BGO, GSO:Ce, YAG:Ce, and CaF 2:Eu; CaF 2:Eu coated with a fluorescent polymer, and combinations of coated and uncoated CaF 2:Eu with ZnS:Ag were evaluated for their ability to discriminate between alpha and beta particles in a flow-cell radiation detector. The evaluations were based on the analysis of pulse shape spectra. Various granulated scintillators were packed into flow cell detectors that were coils of 3.0 mm OD×1.5 mm ID fluorinated ethylene propylene Teflon ® tubing positioned between dual photomultiplier tubes for analysis. The best pulse shape discrimination was obtained for a combination of equal masses of uncoated CaF 2:Eu (63-90 μm) and ZnS:Ag (10 μm), which had a 9% spillover. Additional research is needed to reduce the spillover.

  2. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  3. Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

    PubMed

    Ha, Jang Ho; Kim, Han Soo

    2013-11-01

    The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation.

  4. Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

    DOEpatents

    Hansen, W.L.; Haller, E.E.

    1980-09-19

    Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

  5. Assessment of the Influence of the RaD-X Balloon Payload on the Onboard Radiation Detectors

    NASA Technical Reports Server (NTRS)

    Gronoff, Guilluame; Mertens, Christopher J.; Norman, Ryan B.; Straume, Tore; Lusby, Terry C.

    2016-01-01

    The NASA Radiation Dosimetry Experiment (RaD-X) stratospheric balloon flight mission, launched on 25 September 2015, provided dosimetric measurements above the Pfotzer maximum. The goal of taking these measurements is to improve aviation radiation models by providing a characterization of cosmic ray primaries, which are the source of radiation exposure at aviation altitudes. The RaD-X science payload consists of four instruments. The main science instrument is a tissue-equivalent proportional counter (TEPC). The other instruments consisted of three solid state silicon dosimeters: Liulin, Teledyne total ionizing dose (TID) and RaySure detectors. The instruments were housed in an aluminum structure protected by a foam cover. The structure partially shielded the detectors from cosmic rays but also created secondary particles, modifying the ambient radiation environment observed by the instruments. Therefore, it is necessary to account for the influence of the payload structure on the measured doses. In this paper, we present the results of modeling the effect of the balloon payload on the radiation detector measurements using a Geant-4 (GEometry ANd Tracking) application. Payload structure correction factors derived for the TEPC, Liulin, and TID instruments are provided as a function of altitude. Overall, the payload corrections are no more than a 7% effect on the radiation environment measurements.

  6. Spatial and spectral gamma-ray response of plastic scintillators used in portal radiation detectors; comparison of measurements and simulations

    NASA Astrophysics Data System (ADS)

    Takoudis, G.; Xanthos, S.; Clouvas, A.; Antonopoulos-Domis, M.; Potiriadis, C.; Silva, J.

    2009-02-01

    Portal radiation detectors are commonly used by steel industries in the probing and detection of radioactivity contamination in scrap metal. Furthermore, a large number of portal monitors are installed at the border crossings to prevent illegal radioactive material trafficking. These portal detectors typically consist of either PS (polystyrene) or PVT (polyvinyltoluene) plastic scintillating detectors. Through the electronic circuit of the detector, an energy region-of-interest window can be determined in order to focus on the detection of certain radionuclides. In this study, the spatial response of a portal's PS scintillator to a Cs-137 and a Co-60 source for various energy region-of-interest windows is presented. Furthermore, a number of measured spectra for different source positions on the surface of the scintillating detector are shown. The measured spatial response showed a quantitative and qualitative dependence on the energy window used each time. In addition, measured spectra showed energy shifts for different positions of the two sources on the detector surface. The aforementioned phenomena could not be adequately explained and modelled using gamma-particle transport Monte Carlo simulation tools, such as the MCNP4C2 code. In order to fully explain these phenomena, we performed optical simulations, modelling the transport of the light yield within the detector, using Gate v3.0.0 with Geant 4.8.0p01 of CERN. The results of those simulations are presented and compared to the measured ones.

  7. Radiation Resistance Study of Semi-Insulating GaAs-Based Radiation Detectors to Extremely High Gamma Doses

    NASA Astrophysics Data System (ADS)

    Ly Anh, T.; Perd'ochová, A.; Nečas, V.; Pavlicová, V.

    2006-01-01

    In our previous paper [V. Nečas et al.: Nucl. Inst. and Meth. A 458 (2001) 348-351] we reported on the study on radiation stability of semi-insulating (SI) LEG GaAs detectors to doses of photons from 60Co up to 19.2 kGy. Later we presented a study, which covered radiation hardness to the same doses on the base of detector material itself, where strong dependence has been proved [T. Ly Anh et al., Proceedings of the XII th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002). Smolenice Castle, Slovakia (2002) 292-295 (0-7803-7418-5)]. In this paper we present both the key electrical and detection characteristics of SI GaAs radiation detectors prepared using substrates from four various supplies and two different types of contacts, which were exposed to several gamma doses from 60Co up to the integral dose of about 1 MGy. The obtained results show that SI LEG GaAs detectors provide good spectroscopic performances and even their slight improvement after low to middle gamma irradiation doses (3 -10 kGy) was observed. Further dose exposure caused the degradation of detection properties with an extreme and following improvement depending on detector material properties. SI GaAs detector still retains its working capabilities even after very high doses applied, up to 1 MGy.

  8. Assessment of the influence of the RaD-X balloon payload on the onboard radiation detectors

    NASA Astrophysics Data System (ADS)

    Gronoff, Guillaume; Mertens, Christopher J.; Norman, Ryan B.; Straume, Tore; Lusby, Terry C.

    2016-10-01

    The NASA Radiation Dosimetry Experiment (RaD-X) stratospheric balloon flight mission, launched on 25 September 2015, provided dosimetric measurements above the Pfotzer maximum. The goal of taking these measurements is to improve aviation radiation models by providing a characterization of cosmic ray primaries, which are the source of radiation exposure at aviation altitudes. The RaD-X science payload consists of four instruments. The main science instrument is a tissue-equivalent proportional counter (TEPC). The other instruments consisted of three solid state silicon dosimeters: Liulin, Teledyne total ionizing dose (TID) and RaySure detectors. The instruments were housed in an aluminum structure protected by a foam cover. The structure partially shielded the detectors from cosmic rays but also created secondary particles, modifying the ambient radiation environment observed by the instruments. Therefore, it is necessary to account for the influence of the payload structure on the measured doses. In this paper, we present the results of modeling the effect of the balloon payload on the radiation detector measurements using a Geant-4 (GEometry ANd Tracking) application. Payload structure correction factors derived for the TEPC, Liulin, and TID instruments are provided as a function of altitude. Overall, the payload corrections are no more than a 7% effect on the radiation environment measurements.

  9. Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

    PubMed

    Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

  10. Improved Growth Methods for LaBr3 Scintillation Radiation Detectors

    SciTech Connect

    McGregor, Douglas S

    2011-05-01

    The objective is to develop advanced materials for deployment as high-resolution gamma ray detectors. Both LaBr3 and CeBr3 are advanced scintillation materials, and will be studied in this research. Prototype devices, in collaboration Sandia National Laboratories, will be demonstrated along with recommendations for mass production and deployment. It is anticipated that improved methods of crystal growth will yield larger single crystals of LaBr3 for deployable room-temperature operated gamma radiation spectrometers. The growth methods will be characterized. The LaBr3 and CeBr3 scintillation crystals will be characterized for light yield, spectral resolution, and for hardness.

  11. Growth of mercuric iodide (HgI2) for nuclear radiation detectors

    NASA Technical Reports Server (NTRS)

    Vandenberg, L.; Schnepple, W. F.

    1988-01-01

    Mercuric iodide is a material used for the fabrication of the sensing element in solid state X-ray and gamma ray detecting instruments. The operation of the devices is determined to a large degree by the density of structural defects in the single crystalline material used in the sensing element. Since there were strong indications that the quality of the material was degraded by the effects of gravity during the growth process, a research and engineering program was initiated to grow one or more crystals of mercuric iodide in the reduced gravity environment of space. A special furnace assembly was designed which could be accommodated in a Spacelab rack, and at the same time made it possible to use the same growth procedures and controls used when growing a crystal on the ground. The space crystal, after the flight, was subjected to the same evaluation methods used for earth-grown crystals, so that comparisons could be made.

  12. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  13. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  14. Applying Semiconductor Technologies and Metrology Tools to Biomedical Research: Manipulation and Detection of Single Molecules

    NASA Astrophysics Data System (ADS)

    Berlin, Andrew A.; Sundararajan, Narayan; Koo, Tae-Woong

    2005-09-01

    Intel's Precision Biology research effort is working to combine Intel's expertise in nanotechnology with aspects of biology and medicine to create highly sensitive instrumentation for biomolecular analysis. The ability to manipulate, detect, and identify biological molecules at ultra-low concentrations is important for applications ranging from whole-genome DNA sequencing to protein-based early disease detection. In this paper we describe our work to develop a molecular labeling system based on Surface-Enhanced Raman Spectroscopy (SERS), to enable highly sensitive protein detection. We also present a set of microfluidic and spectroscopic techniques that our team has developed for transporting and identifying single molecules in solution.

  15. Underwater radiation detector

    DOEpatents

    Kruse, Lyle W.; McKnight, Richard P.

    1986-01-01

    A detector apparatus for differentiating between gamma and neutron radiation is provided. The detector includes a pair of differentially shielded Geiger-Mueller tubes. The first tube is wrapped in silver foil and the second tube is wrapped in lead foil. Both the silver and lead foils allow the passage of gamma rays at a constant rate in a gamma ray only field. When neutrons are present, however, the silver activates and emits beta radiation that is also detected by the silver wrapped Geiger-Mueller tube while the radiation detected by the lead wrapped Geiger-Mueller tube remains constant. The amount of radiation impinging on the separate Geiger-Mueller tubes is then correlated in order to distinguish between the neutron and gamma radiations.

  16. Radiation detector spectrum simulator

    DOEpatents

    Wolf, M.A.; Crowell, J.M.

    1985-04-09

    A small battery operated nuclear spectrum simulator having a noise source generates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith to generate several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

  17. Radiation detector spectrum simulator

    DOEpatents

    Wolf, Michael A.; Crowell, John M.

    1987-01-01

    A small battery operated nuclear spectrum simulator having a noise source nerates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith generates several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

  18. AIRBORNE RADIATION DETECTOR

    DOEpatents

    Cartmell, T.R.; Gifford, J.F.

    1959-08-01

    An ionization chamber used for measuring the radioactivity of dust present in atmospheric air is described. More particularly. the patent describes a device comprising two concentric open ended, electrically connected cylinders between which is disposed a wire electrcde. A heating source is disposed inside of the cylinder to circulate air through the space between the two cylinders by convective flow. A high voltage electric field between the wire electrcde of the electrically connected cylinder will cause ionization of the air as it passes therethrough.

  19. Flexible composite radiation detector

    DOEpatents

    Cooke, D. Wayne; Bennett, Bryan L.; Muenchausen, Ross E.; Wrobleski, Debra A.; Orler, Edward B.

    2006-12-05

    A flexible composite scintillator was prepared by mixing fast, bright, dense rare-earth doped powdered oxyorthosilicate (such as LSO:Ce, LSO:Sm, and GSO:Ce) scintillator with a polymer binder. The binder is transparent to the scintillator emission. The composite is seamless and can be made large and in a wide variety of shapes. Importantly, the composite can be tailored to emit light in a spectral region that matches the optimum response of photomultipliers (about 400 nanometers) or photodiodes (about 600 nanometers), which maximizes the overall detector efficiency.

  20. Ionizing Radiation Detector

    DOEpatents

    Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

    2003-11-18

    A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water after attaching electrical contacts to the crystal surface.

  1. Advanced Radiation Detector Development

    SciTech Connect

    The University of Michigan

    1998-07-01

    Since our last progress report, the project at The University of Michigan has continued to concentrate on the development of gamma ray spectrometers fabricated from cadmium zinc telluride (CZT). This material is capable of providing energy resolution that is superior to that of scintillation detectors, while avoiding the necessity for cooling associated with germanium systems. In our past reports, we have described one approach (the coplanar grid electrode) that we have used to partially overcome some of the major limitations on charge collection that is found in samples of CZT. This approach largely eliminates the effect of hole motion in the formation of the output signal, and therefore leads to pulses that depend only on the motion of a single carrier (electrons). Since electrons move much more readily through CZT than do holes, much better energy resolution can be achieved under these conditions. In our past reports, we have described a 1 cm cube CZT spectrometer fitted with coplanar grids that achieved an energy resolution of 1.8% from the entire volume of the crystal. This still represents, to our knowledge, the best energy resolution ever demonstrated in a CZT detector of this size.

  2. The development of photoemission spectroscopy and its application to the study of semiconductor interfaces Observations on the interplay between basic and applied research (Welch Memorial Lecture)

    NASA Technical Reports Server (NTRS)

    Spicer, W. E.

    1985-01-01

    A sketch is given of the development of photoemission electron spectroscopy (PES) with emphasis on the author's own experience. Emphasis is placed: (1) on the period between 1958-1970; (2) on the various developments which were required for PES to emerge; and (3) on the strong interactions between applied/fundamental and knowledge/empirically based research. A more detailed discussion is given of the recent (1975-present) application of PES to study the interfaces of III-V semiconductors.

  3. Dye- and Semiconductor-Sensitized Nanoparticle Solar Cell Research at NREL

    SciTech Connect

    Frank, A. J.; Kopidakis, N.; Benkstein, K. D.; van de Lagemaat, J.; Neale, N. R.

    2005-01-01

    The major objective of this research program is to determine the operational characteristics key to efficient, low-cost, stable liquid-junction and solid-state solar cells based on sensitized nanoporous films (in collaboration with DOE's Office of Science Program). Toward this end, we are conducting experimental and theoretical studies to understand the unique physical and chemical factors governing cell performance. Current scientific issues addressed include the influence of film morphology, sensitizer, and electrolyte on the electron transport and recombination dynamics and on the light-harvesting, charge-injection, and charge-collection efficiencies. Recently, we investigated the relationship between (1) transport and recombination, (2) morphological factors of core-shell nanoparticle films and their PV properties, and (3) electron-electron interactions and their effect on the transport dynamics. In this paper, we discuss the connection between transport and recombination and its effect on cell performance.

  4. Research on defects and transport in amorphous silicon-based semiconductors

    SciTech Connect

    Schiff, E.A.; Antoniadis, H.; Lee, J.K.; Wang, Q. )

    1992-04-01

    This report describes the results from research on two topics: (1) the effects of light-soaking on the electron drift mobility in a-Si:H, and (2) modulated electron spin resonance measurements and their relationship to the electronic correlation energy of the D center in a-Si:H. Both of these projects were undertaken to better determine where the standard'' model for a-Si:H breaks down. The standard model is reasonably successful in accounting for the most elementary deep trapping'' aspects of electron and hole transport in a-Si:H, and it accounts adequately for the sub-band-gap optical properties. However, it is much less clear whether it provides a sufficient basis for understanding several effects which are crucial in operating solar cells: electron and hole mobilities and recombination in the presence of light-bias and space-charge. In the standard model, one would not expect significant effects on drift mobilities due to light-soaking, which would be envisioned as simply increasing the D-center density. Similarly, in the standard model one would not anticipate a significant temperature dependence to electron spin resonance, because essentially all spins are already detected. Discussions in the available literature on the evidence regarding both effects were inconclusive. The work reported here sets considerably more stringent constraints on the magnitude of the two effects.

  5. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  6. Characterization of a novel two dimensional diode array the ''magic plate'' as a radiation detector for radiation therapy treatment

    SciTech Connect

    Wong, J. H. D.; Fuduli, I.; Carolan, M.; Petasecca, M.; Lerch, M. L. F.; Perevertaylo, V. L.; Metcalfe, P.; Rosenfeld, A. B.

    2012-05-15

    the beam perturbation study, the surface dose increased by 12.1% for a 30 x 30 cm{sup 2} field size at the source to detector distance (SDD) of 80 cm whilst the transmission for the MP was 99%. Conclusions: The radiation response of the magic plate was successfully characterized. The array of epitaxial silicon based detectors with ''drop-in'' packaging showed properties suitable to be used as a simplified multipurpose and nonperturbing 2D radiation detector for radiation therapy dosimetric verification.

  7. Personal radiation detector at a high technology readiness level that satisfies DARPA's SN-13-47 and SIGMA program requirements

    NASA Astrophysics Data System (ADS)

    Ginzburg, D.; Knafo, Y.; Manor, A.; Seif, R.; Ghelman, M.; Ellenbogen, M.; Pushkarsky, V.; Ifergan, Y.; Semyonov, N.; Wengrowicz, U.; Mazor, T.; Kadmon, Y.; Cohen, Y.; Osovizky, A.

    2015-06-01

    There is a need to develop new personal radiation detector (PRD) technologies that can be mass produced. On August 2013, DARPA released a request for information (RFI) seeking innovative radiation detection technologies. In addition, on December 2013, a Broad Agency Announcement (BAA) for the SIGMA program was released. The RFI requirements focused on a sensor that should possess three main properties: low cost, high compactness and radioisotope identification capabilities. The identification performances should facilitate the detection of a hidden threat, ranging from special nuclear materials (SNM) to commonly used radiological sources. Subsequently, the BAA presented the specific requirements at an instrument level and provided a comparison between the current market status (state-of-the-art) and the SIGMA program objectives. This work presents an optional alternative for both the detection technology (sensor with communication output and without user interface) for DARPA's initial RFI and for the PRD required by the SIGMA program. A broad discussion is dedicated to the method proposed to fulfill the program objectives and to the selected alternative that is based on the PDS-GO design and technology. The PDS-GO is the first commercially available PRD that is based on a scintillation crystal optically coupled with a silicon photomultiplier (SiPM), a solid-state light sensor. This work presents the current performance of the instrument and possible future upgrades based on recent technological improvements in the SiPM design. The approach of utilizing the SiPM with a commonly available CsI(Tl) crystal is the key for achieving the program objectives. This approach provides the appropriate performance, low cost, mass production and small dimensions; however, it requires a creative approach to overcome the obstacles of the solid-state detector dark current (noise) and gain stabilization over a wide temperature range. Based on the presented results, we presume that

  8. Quantum Transport in Semiconductors

    DTIC Science & Technology

    1991-10-01

    SRS i 91 4. TITLE AND SUBTITLE Quantum Transport in Semiconductors 5. FUNDING NUMBER söMtos-rizk-ooss 6. AUTHOR(S) D. K. Ferry ©fte ELECTE...OF ABSTRACT UL NSN 7540-01-280-5500 O 1 9 Standard Form 298 (Rev. 2-89) Presented by ANSI Std «9-18 298-102 Final Report Quantum Transport in... Quantum Transport in Semiconductor Devices This final report describes a program of research investigating quantum effects which become important in

  9. 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detectors Workshop

    NASA Astrophysics Data System (ADS)

    The Nuclear Science Symposium (NSS) offers an outstanding opportunity for scientists and engineers interested or actively working in the fields of nuclear science, radiation instrumentation, software and their applications, to meet and discuss with colleagues from around the world. The program emphasizes the latest developments in technology and instrumentation and their implementation in experiments for space sciences, accelerators, other radiation environments, and homeland security. The Medical Imaging Conference (MIC) is the foremost international scientific meeting on the physics, engineering and mathematical aspects of nuclear medicine based imaging. As the field develops, multi-modality approaches are becoming more and more important. The content of the MIC reflects this, with a growing emphasis on the methodologies of X-ray, optical and MR imaging as they relate to nuclear imaging techniques. In addition, specialized topics will be addressed in the Short Courses and Workshops programs. The Workshop on Room-Temperature Semiconductor Detectors (RTSD) represents the largest forum of scientists and engineers developing new semiconductor radiation detectors and imaging arrays. Room-temperature solid-state radiation detectors for X-ray, gamma-ray, and neutron radiation are finding increasing applications in such diverse fields as medicine, homeland security, astrophysics and environmental remediation. The objective of this workshop is to provide a forum for discussion of the state of the art of material development for semiconductor, scintillator, and organic materials for detection, materials characterization, device fabrication and technology, electronics and applications.

  10. Towards an optimum design of a P-MOS radiation detector for use in high-energy medical photon beams and neutron facilities: analysis of activation materials.

    PubMed

    Price, Robert A

    2005-01-01

    The behaviour of packaged and unpackaged ESAPMOS4 RadFET radiation detectors (NMRC Cork, Ireland) was investigated when used in the mixed photon and neutron environment of a medical linear accelerator operating above the nucleon separation energy and in a 14 MeV neutron field provided by a D-T generator. Within the uncertainty of the experimental set-up (4% at 95% confidence level) the unpackaged device was found to have essentially zero activation dose-burden whereas the packaged device exhibits a considerable degree of post irradiation absorbed dose due to deactivation radiation.

  11. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  12. Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

    SciTech Connect

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, James E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  13. Superheating suppresses structural disorder in layered BiI3 semiconductors grown by the Bridgman method

    NASA Astrophysics Data System (ADS)

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, J. E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In this work, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown by others to improve crystal quality in non-layered semiconductor crystals (Rudolph et al., 1996) [26]; thus the technique was explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, X-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  14. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  15. Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

    SciTech Connect

    E. Y. Lee; B. A. Brunett; R. W. Olsen; J. M. Van Scyoc III; H. Hermon; R. B. James

    1998-06-18

    The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10{sup {minus}16}cm{sup 2} is detected and three hole traps having energies of 70 {+-} 20 meV, 105 {+-} 30 meV and 694 {+-} 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence.

  16. A low cost network of spectrometer radiation detectors based on the ArduSiPM a compact transportable Software/Hardware Data Acquisition system with Arduino DUE

    SciTech Connect

    Bocci, Valerio; Chiodi, Giacomo; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2015-07-01

    The necessity to use Photo Multipliers (PM) as light detector limited in the past the use of crystals in radiation handled device preferring the Geiger approach. The Silicon Photomultipliers (SiPMs) are very small and cheap, solid photon detectors with good dynamic range and single photon detection capability, they are usable to supersede cumbersome and difficult to use Photo Multipliers (PM). A SiPM can be coupled with a scintillator crystal to build efficient, small and solid radiation detector. A cost effective and easily replicable Hardware software module for SiPM detector readout is made using the ArduSiPM solution. The ArduSiPM is an easily battery operable handled device using an Arduino DUE (an open Software/Hardware board) as processor board and a piggy-back custom designed board (ArduSiPM Shield), the Shield contains all the blocks features to monitor, set and acquire the SiPM using internet network. (authors)

  17. On the relation between deep level compensation, resistivity and electric field in semi-insulating CdTe:Cl radiation detectors

    NASA Astrophysics Data System (ADS)

    Cola, Adriano; Farella, Isabella; Pousset, Jeremy; Valletta, Antonio

    2016-12-01

    A compensation model for semi-insulating CdTe:Cl based on a single dominant deep level 0.725 eV above the valence band is proposed. The model is corroborated by experimental evidence: resistivity measurements as a function of temperature on bulk crystals and stationary electric field distributions in Ohmic/Schottky radiation detectors, obtained by the Pockels effect. The latter are in close agreement with the numerical solutions of transport equations when considering the deep centre concentration in the range 2 - 4 × 1012 cm-3, and a compensation ratio R = 2.1, this one being consistent with an original ambipolar analysis of resistivity. More generally, the approach elucidates the role of electrical contacts and deep levels in controlling the electric fields in devices based on compensated materials.

  18. Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

    NASA Technical Reports Server (NTRS)

    Burshtein, Z.; Jayatirtha, H. N.; Burger, A.; Butler, J. F.; Apotovsky, B.; Doty, F. P.

    1993-01-01

    Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

  19. Stretchable Organic Semiconductor Devices.

    PubMed

    Qian, Yan; Zhang, Xinwen; Xie, Linghai; Qi, Dianpeng; Chandran, Bevita K; Chen, Xiaodong; Huang, Wei

    2016-11-01

    Stretchable electronics are essential for the development of intensely packed collapsible and portable electronics, wearable electronics, epidermal and bioimplanted electronics, 3D surface compliable devices, bionics, prosthesis, and robotics. However, most stretchable devices are currently based on inorganic electronics, whose high cost of fabrication and limited processing area make it difficult to produce inexpensive, large-area devices. Therefore, organic stretchable electronics are highly attractive due to many advantages over their inorganic counterparts, such as their light weight, flexibility, low cost and large-area solution-processing, the reproducible semiconductor resources, and the easy tuning of their properties via molecular tailoring. Among them, stretchable organic semiconductor devices have become a hot and fast-growing research field, in which great advances have been made in recent years. These fantastic advances are summarized here, focusing on stretchable organic field-effect transistors, light-emitting devices, solar cells, and memory devices.

  20. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  1. Detection of fast neutrons from D-T nuclear reaction using a 4H-SiC radiation detector

    NASA Astrophysics Data System (ADS)

    Zatko, Bohumir; Sagatova, Andrea; Sedlackova, Katarina; Necas, Vladimir; Dubecky, Frantisek; Solar, Michael; Granja, Carlos

    2016-09-01

    The particle detector based on a high purity epitaxial layer of 4H-SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H-SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D-T (deuterium-tritium) nuclear reaction. The epitaxial layer with a thickness of 105 μm was used as a detection part. A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm2) at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D-T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.

  2. Survey of cryogenic semiconductor devices

    SciTech Connect

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  3. Research on macro- and microsegregation in semiconductor crystals grown from the melt under the direction of August F. Witt at the Massachusetts Institute of Technology

    NASA Astrophysics Data System (ADS)

    Wang, C. A.; Carlson, D.; Motakef, S.; Wiegel, M.; Wargo, M. J.

    2004-03-01

    The birth of the modern age of semiconductor electronics in the 1950s required the production of single crystals from the melt. In the early years of this technology, crystals exhibited non-uniform distributions of chemical and structural defects, which directly affected devices produced from this material. Uniform distribution and control of dopants, unintentional impurities, and native defects were identified as critical requirements for continued advances in device technology. However, since at that time fundamental understanding of cause and effect relationships between crystal growth parameters and the ultimate properties of the materials produced was absent, such desirable properties were unattainable. Nevertheless, it was recognized that segregation plays a key role in the creation of non-uniformities. Macrosegregation, a consequence of the directional solidification process, is generally controlled by diffusion and convective melt flows. Microsegregation is governed by local perturbations at the crystal-melt interface. Time-dependent thermal and melt velocity fields at the crystal-melt interface impact the microscopic rate of growth and the solute diffusion boundary layer. Identification of the fundamental parameters that govern axial and radial macro- and microsegregation during bulk semiconductor crystal growth was the research focus during the early years. Key contributions were made by Prof. August F. Witt and his research group. One of the major contributions was the development of quantitative analytical tools for characterization of the crystal growth process. These tools provided the foundation for understanding the origin and nature of segregation phenomena during crystal growth from the melt. This paper is a brief review of his work.

  4. Nuclear Science Symposium, 21st, Scintillation and Semiconductor Counter Symposium, 14th, and Nuclear Power Systems Symposium, 6th, Washington, D.C., December 11-13, 1974, Proceedings

    NASA Technical Reports Server (NTRS)

    1975-01-01

    Papers are presented dealing with latest advances in the design of scintillation counters, semiconductor radiation detectors, gas and position sensitive radiation detectors, and the application of these detectors in biomedicine, satellite instrumentation, and environmental and reactor instrumentation. Some of the topics covered include entopistic scintillators, neutron spectrometry by diamond detector for nuclear radiation, the spherical drift chamber for X-ray imaging applications, CdTe detectors in radioimmunoassay analysis, CAMAC and NIM systems in the space program, a closed loop threshold calibrator for pulse height discriminators, an oriented graphite X-ray diffraction telescope, design of a continuous digital-output environmental radon monitor, and the optimization of nanosecond fission ion chambers for reactor physics. Individual items are announced in this issue.

  5. Polonium-Lead Extractions to Determine the Best Method for the Quantification of Clean Lead Used in Low-Background Radiation Detectors

    SciTech Connect

    Miley, Sarah M.; Payne, Rosara F.; Schulte, Shannon M.; Finn, Erin C.

    2009-12-01

    Radiation detectors used to search for the existence of exceptionally rare phenomena, such as double-beta decay and dark matter interactions, as well as tiny traces of environmental radioactivity, require the elimination of background signals. Modern detection systems created from ultra pure materials and operated deep underground may be sensitive enough to "see" these rare phenomena, but background activity in Pb gamma-ray shielding could still be a critical stumbling block owing to alpha and beta emissions of Pb, Bi, and Po in the mass 210 chain. To minimize the probability of overwhelming activity from Pb, the alpha activity of 210Pb is quantified. However, a reliable quantification procedure that does not require large volumes of chemicals has not yet been established. Two procedures created for this purpose have been tested for the quantification of alpha activity in lead. Both procedures were designed to start with less than 10g Pb samples to reduce reagents needed and combined precipitation with column separation to isolate 210Pb, followed by alpha spectrometry. One procedure shows promise for obtaining high recoveries and good separation.

  6. Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

    SciTech Connect

    Ralph B. James

    2000-01-07

    In today's commercially available counter-select-grade CdZnTe crystals for radiation detector applications, the thermal ionization energies of the traps and their types, whether electron or hole traps, were measured. The measurements were successfully done using thermoelectric emission spectroscopy (TEES) and thermally stimulated conductivity (TSC). For reliability, the electrical contacts to the sample were found to be very important and, instead of Au Schottky contacts, In Ohmic contacts had to be used. For the filling of the traps, photoexcitation was done at zero bias, at 20K and at wavelengths which gave the maximum bulk photoexcitation for the sample. Between the temperature range from 20 to 400 K, the TSC current was found to be on the order of {approximately} 10,000 times or even larger than the TEES current, in agreement with theory, but only TEES could resolve the trap type and was sensitive to the deep traps. Large concentration of hole traps at 0.1 and 0.6 eV were observed and smaller contraction of electron traps at 0.4 eV was seen. These deep traps cause compensation in the material and also cause trapping that degrades the radiation detection measurement.

  7. Invited review article: physics and Monte Carlo techniques as relevant to cryogenic, phonon, and ionization readout of Cryogenic Dark Matter Search radiation detectors.

    PubMed

    Leman, Steven W

    2012-09-01

    This review discusses detector physics and Monte Carlo techniques for cryogenic, radiation detectors that utilize combined phonon and ionization readout. A general review of cryogenic phonon and charge transport is provided along with specific details of the Cryogenic Dark Matter Search detector instrumentation. In particular, this review covers quasidiffusive phonon transport, which includes phonon focusing, anharmonic decay, and isotope scattering. The interaction of phonons in the detector surface is discussed along with the downconversion of phonons in superconducting films. The charge transport physics include a mass tensor which results from the crystal band structure and is modeled with a Herring-Vogt transformation. Charge scattering processes involve the creation of Neganov-Luke phonons. Transition-edge-sensor (TES) simulations include a full electric circuit description and all thermal processes including Joule heating, cooling to the substrate, and thermal diffusion within the TES, the latter of which is necessary to model normal-superconducting phase separation. Relevant numerical constants are provided for these physical processes in germanium, silicon, aluminum, and tungsten. Random number sampling methods including inverse cumulative distribution function (CDF) and rejection techniques are reviewed. To improve the efficiency of charge transport modeling, an additional second order inverse CDF method is developed here along with an efficient barycentric coordinate sampling method of electric fields. Results are provided in a manner that is convenient for use in Monte Carlo and references are provided for validation of these models.

  8. Invited Review Article: Physics and Monte Carlo techniques as relevant to cryogenic, phonon, and ionization readout of Cryogenic Dark Matter Search radiation detectors

    SciTech Connect

    Leman, Steven W.

    2012-09-15

    This review discusses detector physics and Monte Carlo techniques for cryogenic, radiation detectors that utilize combined phonon and ionization readout. A general review of cryogenic phonon and charge transport is provided along with specific details of the Cryogenic Dark Matter Search detector instrumentation. In particular, this review covers quasidiffusive phonon transport, which includes phonon focusing, anharmonic decay, and isotope scattering. The interaction of phonons in the detector surface is discussed along with the downconversion of phonons in superconducting films. The charge transport physics include a mass tensor which results from the crystal band structure and is modeled with a Herring-Vogt transformation. Charge scattering processes involve the creation of Neganov-Luke phonons. Transition-edge-sensor (TES) simulations include a full electric circuit description and all thermal processes including Joule heating, cooling to the substrate, and thermal diffusion within the TES, the latter of which is necessary to model normal-superconducting phase separation. Relevant numerical constants are provided for these physical processes in germanium, silicon, aluminum, and tungsten. Random number sampling methods including inverse cumulative distribution function (CDF) and rejection techniques are reviewed. To improve the efficiency of charge transport modeling, an additional second order inverse CDF method is developed here along with an efficient barycentric coordinate sampling method of electric fields. Results are provided in a manner that is convenient for use in Monte Carlo and references are provided for validation of these models.

  9. Chemical modification of semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Finklea, H. O.

    1981-01-01

    Results of research on the chemical modification of TiO2 powders in the gas phase and the examination of the modified powders by infrared absorption spectroscopy are comprehensively summarized. The range of information obtainable by IR spectroscopy of chemically modified semiconductors, and a definition of the optimum reaction conditions for synthesizing a monolayer of methylsilanes using vapor phase reaction conditions were considered.

  10. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  11. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  12. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  13. Feasibility of a semiconductor dosimeter to monitor skin dose in interventional radiology.

    PubMed

    Meyer, P; Regal, R; Jung, M; Siffert, P; Mertz, L; Constantinesco, A

    2001-10-01

    The design and preliminary test results of a semiconductor silicon dosimeter are presented in this article. Use of this dosimeter is foreseen for real-time skin dose control in interventional radiology. The strong energy dependence of this kind of radiation detector is well overcome by filtering the silicon diode. Here, the optimal filter features have been calculated by numerical Monte Carlo simulations. A prototype has been built and tested in a radiological facility. The first experimental results show a good match between the filtered semiconductor diode response and an ionization chamber response, within 2% fluctuation in a 2.2 to 4.1 mm Al half-value layer (HVL) energy range. Moreover, the semiconductor sensor response is linear from 0.02 Gy/min to at least 6.5 Gy/min, covering the whole dose rate range found in interventional radiology. The results show that a semiconductor dosimeter could be used to monitor skin dose during the majority of procedures using x-rays below 150 keV. The use of this device may assist in avoiding radiation-induced skin injuries and lower radiation levels during interventional procedures.

  14. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  15. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  16. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  17. Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

    DOEpatents

    Iwanczyk, Jan S.; Patt, Bradley E.

    2003-01-01

    Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.

  18. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  19. Multiple-mode radiation detector

    DOEpatents

    Claus, Liam D.; Derzon, Mark S.; Kay, Randolph R.; Bauer, Todd; Trotter, Douglas Chandler; Henry, Michael David

    2015-08-25

    An apparatus for detecting radiation is provided. In embodiments, at least one sensor medium is provided, of a kind that interacts with radiation to generate photons and/or charge carriers. The apparatus also includes at least one electrode arrangement configured to collect radiation-generated charge from a sensor medium that has been provided. The apparatus also includes at least one photodetector configured to produce an electrical output in response to photons generated by radiation in such a sensor medium, and an electronic circuit configured to produce an output that is jointly responsive to the collected charge and to the photodetector output. At least one such electrode arrangement, at least one such photodetector, and at least one such sensor medium are combined to form an integral unit.

  20. Imaging radiation detector with gain

    DOEpatents

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1984-01-01

    A radiation imaging device which has application in x-ray imaging. The device can be utilized in CAT scanners and other devices which require high sensitivity and low x-ray fluxes. The device utilizes cumulative multiplication of charge carriers on the anode plane and the collection of positive ion charges to image the radiation intensity on the cathode plane. Parallel and orthogonal cathode wire arrays are disclosed as well as a two-dimensional grid pattern for collecting the positive ions on the cathode.

  1. Imaging radiation detector with gain

    DOEpatents

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1982-07-21

    A radiation imaging device which has application in x-ray imaging. The device can be utilized in CAT scanners and other devices which require high sensitivity and low x-ray fluxes. The device utilizes cumulative multiplication of charge carriers on the anode plane and the collection of positive ion charges to image the radiation intensity on the cathode plane. Parallel and orthogonal cathode wire arrays are disclosed as well as a two-dimensional grid pattern for collecting the positive ions on the cathode.

  2. Amorphous silicon based radiation detectors

    SciTech Connect

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D. ); Fujieda, I.; Street, R.A. )

    1991-07-01

    We describe the characteristics of thin(1 {mu}m) and thick (>30{mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs.

  3. Alpha-beta radiation detector

    DOEpatents

    Fleming, D.M.; Simmons, K.L.; Froelich, T.J.; Carter, G.L.

    1998-08-18

    The invention is based in part on the discovery that a plastic housing that is lightweight is surprisingly efficient inasmuch as background signals from any gamma radiation are significantly reduced by using a plastic housing instead of a metal housing. A further aspect of the present invention is the profile of the housing as a bi-linear approximation to a parabola resulting in full optical response from any location on the scintillation material to the photomultiplier tube. A yet further aspect of the present invention is that the survey probe is resistant to magnetic fields. A yet further aspect of the present invention is the use of a snap-fit retaining bracket that overcomes the need for multiple screws. 16 figs.

  4. Simple dynamic electromagnetic radiation detector

    NASA Technical Reports Server (NTRS)

    Been, J. F.

    1972-01-01

    Detector monitors gamma dose rate at particular position in a radiation facility where a mixed neutron-gamma environment exists, thus determining reactor power level changes. Device also maps gamma intensity profile across a neutron-gamma beam.

  5. Alpha-beta radiation detector

    DOEpatents

    Fleming, Dale M.; Simmons, Kevin L.; Froelich, Thomas J.; Carter, Gregory L.

    1998-01-01

    The invention is based in part on the discovery that a plastic housing that is lightweight is surprisingly efficient inasmuch as background signals from any gamma radiation are significantly reduced by using a plastic housing instead of a metal housing. A further aspect of the present invention is the profile of the housing as a bi-linear approximation to a parabola resulting in full optical response from any location on the scintillation material to the photomultiplier tube. A yet further aspect of the present invention is that the survey probe is resistant to magnetic fields. A yet further aspect of the present invention is the use of a snap-fit retaining bracket that overcomes the need for multiple screws.

  6. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  7. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  8. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  9. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  10. Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

    DOEpatents

    Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.

    2003-03-04

    A method, system and a radiation detector system for use therein are provided for determining the depth distribution of radiation-emitting material distributed in a source medium, such as a contaminated field, without the need to take samples, such as extensive soil samples, to determine the depth distribution. The system includes a portable detector assembly with an x-ray or gamma-ray detector having a detector axis for detecting the emitted radiation. The radiation may be naturally-emitted by the material, such as gamma-ray-emitting radionuclides, or emitted when the material is struck by other radiation. The assembly also includes a hollow collimator in which the detector is positioned. The collimator causes the emitted radiation to bend toward the detector as rays parallel to the detector axis of the detector. The collimator may be a hollow cylinder positioned so that its central axis is perpendicular to the upper surface of the large area source when positioned thereon. The collimator allows the detector to angularly sample the emitted radiation over many ranges of polar angles. This is done by forming the collimator as a single adjustable collimator or a set of collimator pieces having various possible configurations when connected together. In any one configuration, the collimator allows the detector to detect only the radiation emitted from a selected range of polar angles measured from the detector axis. Adjustment of the collimator or the detector therein enables the detector to detect radiation emitted from a different range of polar angles. The system further includes a signal processor for processing the signals from the detector wherein signals obtained from different ranges of polar angles are processed together to obtain a reconstruction of the radiation-emitting material as a function of depth, assuming, but not limited to, a spatially-uniform depth distribution of the material within each layer. The detector system includes detectors having

  11. Non-reference condition correction factor kNR of typical radiation detectors applied for the dosimetry of high-energy photon fields in radiotherapy.

    PubMed

    Chofor, Ndimofor; Harder, Dietrich; Poppe, Björn

    2012-09-01

    According to accepted dosimetry protocols, the "radiation quality correction factor"k(Q) accounts for the energy-dependent changes of detector responses under the conditions of clinical dosimetry for high-energy photon radiations. More precisely, a factor k(QR) is valid under reference conditions, i.e. at a point on the beam axis at depth 10 cm in a large water phantom, for 10×10 cm(2) field size, SSD 100 cm and the given radiation quality with quality index Q. Therefore, a further correction factor k(NR) has been introduced to correct for the influences of spectral quality changes when detectors are used under non-reference conditions such as other depths, field sizes and off-axis distances, while under reference conditions k(NR) is normalized to unity. In this paper, values of k(NR) are calculated for 6 and 15 MV photon beams, using published data of the energy-dependent responses of various radiation detectors to monoenergetic photon radiations, and weighting these responses with validated photon spectra of clinical high-energy photon beams from own Monte-Carlo-calculations for a wide variation of the non-reference conditions within a large water phantom. Our results confirm the observation by Scarboro et al. [26] that k(NR) can be represented by a unique function of the mean energy Em, weighted by the spectral photon fluence. Accordingly, the numerical variations of Em with depth, field size and off-axis distance have been provided. Throughout all considered conditions, the deviations of the k(NR) values from unity are at most 2% for a Farmer type ion chamber, and they remain below 15% for the thermoluminescent detectors LiF:Mg,Ti and LiF:Mg,Cu,P. For the shielded diode EDP-10, k(NR) varies from unity up to 20%, while the unshielded diode EDD-5 shows deviations up to 60% in the peripheral region. Thereby, the restricted application field of unshielded diodes has been clarified. For small field dosimetry purposes k(NR) can be converted into k(NCSF), the non

  12. Solid-state NMR of inorganic semiconductors.

    PubMed

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  13. Capital investment in semiconductors: The lifeblood of the US semiconductor industry

    NASA Astrophysics Data System (ADS)

    Finan, William F.

    1990-09-01

    An analysis is given of four proposals designed to improve capital formation for U.S. industry in general, and the semiconductor industry in particular. The National Advisory Committee on Semiconductors recommendations were to make the current research and experimentation (R and E) tax credit more effective, to reduce taxes on capital gains, to increase personal savings incentives, and to improve semiconductor manufacturing equipment depreciation rules. The results of the qualitative analysis of the proposals as well as a description of the methodology employed are given.

  14. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  15. Technology Roadmaps for Compound Semiconductors

    PubMed Central

    Bennett, Herbert S.

    2000-01-01

    The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615

  16. Semiconductor Solar Superabsorbers

    PubMed Central

    Yu, Yiling; Huang, Lujun; Cao, Linyou

    2014-01-01

    Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials, for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques. PMID:24531211

  17. Nanoscale Semiconductor Devices as New Biomaterials

    PubMed Central

    Zimmerman, John; Parameswaran, Ramya; Tian, Bozhi

    2016-01-01

    Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics studies with nanowire field effect transistor sensors. Third, we present the use of nanowire transistors as electrical recording devices that can be integrated into synthetic tissues and targeted intra- or extracellularly to study single cells. Lastly, we discuss future directions and challenges in further developing this area of research, which will advance biology and medicine. PMID:27213041

  18. Nanoscale Semiconductor Devices as New Biomaterials.

    PubMed

    Zimmerman, John; Parameswaran, Ramya; Tian, Bozhi

    2014-05-01

    Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics studies with nanowire field effect transistor sensors. Third, we present the use of nanowire transistors as electrical recording devices that can be integrated into synthetic tissues and targeted intra- or extracellularly to study single cells. Lastly, we discuss future directions and challenges in further developing this area of research, which will advance biology and medicine.

  19. Semiconductor Nanocrystal Photonics

    DTIC Science & Technology

    2005-08-31

    D. Krauss, C. B. Poitras, and M. Lipson, " Energy transfer between colloidal semiconductor quantum dots in an optical microcavity," (submitted, 2006...Phys. Lett. 82, 4032 (2003). J. J. Peterson and T. D. Krauss, "Fluorescence Spectroscopy of Single Lead Sulfide Quantum Dots ," Nano Lett. (in press...Guo, Xiaowei Teng, Hong Yang, Todd D. Krauss, Carl B. Poitras, and Michal Lipson, "Enhanced Energy Transfer between Colloidal Semiconductor Quantum

  20. SILICON CARBIDE FOR SEMICONDUCTORS

    DTIC Science & Technology

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  1. EDITORIAL: Oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  2. FOREWORD: Focus on Superconductivity in Semiconductors Focus on Superconductivity in Semiconductors

    NASA Astrophysics Data System (ADS)

    Takano, Yoshihiko

    2008-12-01

    Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm-3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors. This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1). The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In2O3 (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  3. Developing New Nanoprobes from Semiconductor Nanocrystals

    SciTech Connect

    Fu, Aihua

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  4. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    SciTech Connect

    Lu, Hong; Burke, Peter G.; Gossard, Arthur C.; Zeng, Gehong; Ramu, Ashok T.; Bahk, Je-Hyeong; Bowers, John E.

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nano­structures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  5. Semimetal/semiconductor nanocomposites for thermoelectrics.

    PubMed

    Lu, Hong; Burke, Peter G; Gossard, Arthur C; Zeng, Gehong; Ramu, Ashok T; Bahk, Je-Hyeong; Bowers, John E

    2011-05-24

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:In(x)Ga(1−x)Sb as a promising p-type thermoelectric material. Nanostructures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By co-doping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μ m thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  6. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1979-01-01

    The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

  7. EDITORIAL: The 21st Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    2006-09-01

    This Topical Issue contains works presented at the 21st Nordic Semiconductor Meeting (21NSM) held at Sundvolden, Norway, 18-19 August 2005. The institutions supporting 21NSM were: University of Oslo, SINTEF, the Norwegian Defense Research Establishment and Vestfold University College. The Nordic Semiconductor Meeting has become an international forum that has been held every other year in a relay fashion in Denmark, Finland, Iceland, Norway and Sweden. The focus of the meeting has been on original research and science being carried out on semiconductor materials, devices and systems. Reports on industrial activity have usually been featured at the meetings. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. For the last five meetings the proceedings have been printed in a dedicated volume of Physica Scripta in the Topical Issue series. The papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the expected high standards of the series. The range of topics covered by this volume is broad, reflecting the call for papers; most of the papers have an element of materials science and the largest portion of these deal with other semiconductor materials other than silicon. The 21NSM was supported by the following sponsors: Renewable Energy Corporation (REC), EMF III-V Innovations (EMF), and the Nordic Research Board (NordForsk). Terje G Finstad Department of Physics, University of Oslo, Norway Andrej Y Kuznetsov and Bengt G Svensson Centre for Materials Science and Nanotechnology, University of Oslo, Norway

  8. Conductivity in transparent oxide semiconductors.

    PubMed

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  9. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  10. Biological Semiconductors | NCI Technology Transfer Center | TTC

    Cancer.gov

    The National Cancer Institute's Cancer Diagnostic Program and the Food and Drug Administration's Center for Devices and Radiological Health is seeking statements of capability or interest from parties interested in collaborative research to further develop, evaluate, or commercialize biological semiconductors as diagnostic sensors.

  11. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  12. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  13. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  14. New unorthodox semiconductor devices

    NASA Astrophysics Data System (ADS)

    Board, K.

    1985-12-01

    A range of new semiconductor devices, including a number of structures which rely entirely upon new phenomena, are discussed. Unipolar two-terminal devices, including impurity-controlled barriers and graded composition barriers, are considered, as are new transistor structures, including the hot-electron camel transistor, the planar-doped barrier transistor, the thermionic emission transistor, and the permeable base transistor. Regenerative switching devices are addressed, including the metal-tunnel insulator-semiconductor switch, the polysilicon switch, MIS, and MISIM switching structures, and the triangular-barrier switch. Heterostructure devices are covered, including the heterojunction bipolar transistor, the selectively doped heterojunction transistor, heterojunction lasers, and quantum-well structures.

  15. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  16. Strategy on removing oxygen impurity for crystal growth of one candidate Tl6SeI4 for room-temperature hard radiation detector(Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Lin, Wenwen; Liu, Zhifu; Churilov, Alexei V.; He, Yihui; Kim, Hadong; Cirignano, Leonard J.; Malliakas, Christos D.; Li, Hao; Stoumpos, Constantinos C.; Chung, Duck Young; Wessels, Bruce W.; Kanatzidis, Mercouri G.

    2016-09-01

    Thallium based chalcogenide and halide semiconductors such as Tl4HgI6, TlGaSe2, Tl6SeI4 and Tl6SI4 are promising materials for room-temperature hard radiation detection. They feature appropriate band gaps, high mass densities and facile growth technology. However, these materials are being plagued by the Tl oxides impurity from Tl precursor or Tl containing binary precursors, which leads to problems including tube breakage, parasitic nucleation and detector performance deterioration. In this work, we present a facile way to chemically reduce Tl oxidations, and then eliminate oxygen impurity by adding high-purity graphite powder during synthesis and crystal growth. We also further investigated the reactivity between Tl oxides and graphite. The detector performance of Tl6SeI4 crystal was dramatically improved after lowering/removing the oxygen impurities. This result not only indicates the significance of removing oxygen impurity for improving detector performance. Our results suggest that the chemical reduction method we developed by adding carbon powder during synthesis is highly effective in substantially reducing oxygen impurities from Tl containing materials.

  17. Special Issue featuring invited articles arising from UK Semiconductors 2012

    NASA Astrophysics Data System (ADS)

    Clarke, Edmund; Wada, Osamu

    2013-07-01

    Semiconductor research has formed the basis of many technological advances over the past 50 years, and the field is still highly active, as new material systems and device concepts are developed to address new applications or operating conditions. In addition to the development of traditional semiconductor devices, the wealth of experience with these materials also allows their use as an ideal environment for testing new physics, leading to new classes of devices exploiting quantum mechanical effects that can also benefit from the advantages of existing semiconductor technology in scalability, compactness and ease of mass production. This special issue features papers arising from the UK Semiconductors 2012 Conference, held at the University of Sheffield. The annual conference covers all aspects of semiconductor research, from crystal growth, through investigations of the physics of semiconductor structures to realization of semiconductor devices and their application in emerging technologies. The 2012 conference featured over 150 presentations, including plenary sessions on interband cascade lasers for the 3-6 µm spectral band, efficient single photon sources based on InAs quantum dots embedded in GaAs photonic nanowires, nitride-based quantum dot visible lasers and single photon sources, and engineering of organic light-emitting diodes. The seven papers collected here highlight current research advances, taken from across the scope of the conference. The papers feature growth of novel nitride-antimonide material systems for mid-infrared sources and detectors, use of semiconductor nanostructures for charge-based memory and visible lasers, optimization of device structures either to reduce losses in solar cells or achieve low noise amplification in transistors, design considerations for surface-emitting lasers incorporating photonic crystals and an assessment of laser power convertors for power transfer. The editors of this special issue and the conference

  18. REDUCTION OF ARSENIC WASTES IN THE SEMICONDUCTOR INDUSTRY

    EPA Science Inventory

    The research described in this report was aimed at initiating and developing processes and process modifications that could be incorporated into semiconductor manufacturing operations to accomplish pollution prevention, especially to accomplish significant reduction in the quanti...

  19. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  20. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  1. Solution-phase synthesis of metal and/or semiconductor homojunction/heterojunction nanomaterials.

    PubMed

    Feng, Xiumei; Hu, Guanqi; Hu, Jianqiang

    2011-05-01

    The design and architecture of programmable metal-semiconductor nanostructures with excellent optoelectronic properties from metal and semiconductor building blocks with nanoscale dimensions have been a key aim of material scientists due to their central roles in the fabrication of electronic, optical, and optoelectronic nanodevices. This review focuses on the latest advances in the solution-phase synthesis of metal and/or semiconductor homojunction/heterojunction nanomaterials. It begins with the simplest construction of metal/metal and semiconductor/semiconductor homojunctions, and then highlights the synthetic design of metal/metal and semiconductor/semiconductor heterojunction nanostructures with different building blocks. Special emphasis is placed on metal/semiconductor heterojunction nanomaterials, which are the most challenging and promising nanomaterials for future applications in optoelectronic nanodevices. Finally, this review concludes with personal perspectives on the directions for future research in this field.

  2. Composition-tunable alloyed semiconductor nanocrystals.

    PubMed

    Regulacio, Michelle D; Han, Ming-Yong

    2010-05-18

    The ability to engineer the band gap energy of semiconductor nanocrystals has led to the development of nanomaterials with many new exciting properties and applications. Band gap engineering has thus proven to be an effective tool in the design of new nanocrystal-based semiconductor devices. As reported in numerous publications over the last three decades, tuning the size of nanocrystalline semiconductors is one way of adjusting the band gap energy. On the other hand, research on band gap engineering via control of nanocrystal composition, which is achieved by adjusting the constituent stoichiometries of alloyed semiconductors, is still in its infancy. In this Account, we summarize recent research on colloidal alloyed semiconductor nanocrystals that exhibit novel composition-tunable properties. Alloying of two semiconductors at the nanometer scale produces materials that display properties distinct not only from the properties of their bulk counterparts but also from those of their parent semiconductors. As a result, alloyed nanocrystals possess additional properties that are composition-dependent aside from the properties that emerge due to quantum confinement effects. For example, although the size-dependent emission wavelength of the widely studied CdSe nanocrystals can be continuously tuned to cover almost the entire visible spectrum, the near-infrared (NIR) region is far outside its spectral range. By contrast, certain alloy compositions of nanocrystalline CdSe(x)Te(1-x), an alloy of CdSe and CdTe, can efficiently emit light in the NIR spectral window. These NIR-emitting nanocrystals are potentially useful in several biomedical applications. In addition, highly stable nanocrystals formed by alloying CdSe with ZnSe (i.e., Zn(x)Cd(1-x)Se) emit blue light with excellent efficiency, a property seldom achieved by the parent binary systems. As a result, these materials can be used in short-wavelength optoelectronic devices. In the future, we foresee new discoveries

  3. Electron-Beam Controlled Semiconductor Switches

    DTIC Science & Technology

    1993-11-02

    34 Proceedings of the 7th IEEE Pulsed Power Conference (1989) 348- 351. Thomas, B, et al., "Investigation of Surface Flashover in Silicon...Phbs- trolled semiconductor switch. In 1990 he joined the Naval Surface Warfare ical Electronics Research Institute His current research interests...field of 17 depletion region over the entire zone I1. In addition to this kV/cm. At this point, problems with surface flashover prevented depletion

  4. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    NASA Astrophysics Data System (ADS)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS

  5. Where the chips fall: environmental health in the semiconductor industry.

    PubMed

    Chepesiuk, R

    1999-09-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

  6. Where the chips fall: environmental health in the semiconductor industry.

    PubMed Central

    Chepesiuk, R

    1999-01-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

  7. Developing new nanoprobes from semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Fu, Aihua

    In recent years, semiconductor nanocrystal quantum dots have garnered the spotlight as an important new class of biological labeling tool. With optical properties superior to conventional organic fluorophores from many aspects, such as high photostability and multiplexing capability, quantum dots have been applied in a variety of advanced imaging applications. This dissertation research goes along with large amount of research efforts in this field, while focusing on the design and development of new nanoprobes from semiconductor nanocrystals that are aimed for useful imaging or sensing applications not possible with quantum dots alone. Specifically speaking, two strategies have been applied. In one, we have taken advantage of the increasing capability of manipulating the shape of semiconductor nanocrystals by developing semiconductor quantum rods as fluorescent biological labels. In the other, we have assembled quantum dots and gold nanocrystals into discrete nanostructures using DNA. The background information and synthesis, surface manipulation, property characterization and applications of these new nanoprobes in a few biological experiments are detailed in the dissertation.

  8. Three dimensional strained semiconductors

    DOEpatents

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  9. Metal Contacts in Semiconductors.

    DTIC Science & Technology

    1983-11-01

    surfaces, Pnotoelectron spe troscopy, Auger electron spectro- I scopy, Schottky barriers, ohmic contacts, Defects in semiconductors, Cadmium * telluride...Indium phosphide, Gallium arsenide, Gallium Selenide . j 20. ABSTR ACT (roothat ow rees esh " neceay and td..ity by block -. b*w) SThe application of...angstroms. Also, provided one eliminates the systems where cadmium outdiffusion into high work function metals occurs then good agreement between the

  10. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  11. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  12. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  13. New Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Balestra, F.

    2008-11-01

    A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.

  14. Semiconductor electrochemistry of coal pyrite

    SciTech Connect

    Osseo-Asare, K.

    1992-05-01

    This project seeks to advance the fundamental understanding of the physicochemical processes occurring at the pyrite/aqueous interface, in the context of coal cleaning, coal desulfurization, and acid mine drainage. A novel approach to the study of pyrite aqueous electrochemistry is proposed, based on the use of both synthetic and natural (i.e. coal-derived) pyrite specimens, the utilization of pyrite both in the form of micro (i.e. colloidal and subcolloidal) and macro (i.e. rotating ring disk)-electrodes, and the application of in-situ direct electroanalytical and spectroelectrochemical characterization techniques. Central to this research is the recognition that pyrite is a semiconductor material. (Photo)electrochemical experiments will be conducted to unravel the mechanisms of anodic and cathodic processes such as those associated with pyrite decomposition and the reduction of oxidants such as molecular oxygen and the ferric ion.

  15. Direct conversion semiconductor detectors in positron emission tomography

    NASA Astrophysics Data System (ADS)

    Cates, Joshua W.; Gu, Yi; Levin, Craig S.

    2015-05-01

    Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

  16. Thiazole-based organic semiconductors for organic electronics.

    PubMed

    Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

    2012-06-19

    Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed.

  17. New organic semiconductors with imide/amide-containing molecular systems.

    PubMed

    Liu, Zitong; Zhang, Guanxin; Cai, Zhengxu; Chen, Xin; Luo, Hewei; Li, Yonghai; Wang, Jianguo; Zhang, Deqing

    2014-10-29

    Due to their high electron affinities, chemical and thermal stabilities, π-conjugated molecules with imide/amide frameworks have received considerable attentions as promising candidates for high-performance optoelectronic materials, particularly for organic semiconductors with high carrier mobilities. The purpose of this Research News is to give an overview of recent advances in development of high performance imide/amide based organic semiconductors for field-effect transistors. It covers naphthalene diimide-, perylene diimide- and amide-based conjugated molecules and polymers for organic semiconductors.

  18. 32nd International Conference on the Physics of Semiconductors

    SciTech Connect

    Chelikowsky, James

    2016-10-17

    The International Conference on the Physics of Semiconductors (ICPS) continues a series of biennial conferences that began in the 1950's. ICPS is the premier meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties with an emphasis on new materials and their applications. The meeting will reflect the state of art in the semiconductor physics field and will serve as a forum where scholars, researchers, and specialists can interact to discuss future research directions and technological advancements. The conference typically draws 1,000 international physicists, scientists, and students. This is one of the largest science meetings on semiconductors and related materials to be held in the United States.

  19. Theoretical Studies of Excited State Dynamics in Semiconductor Materials

    NASA Astrophysics Data System (ADS)

    Liu, Jin

    The motivation of this research work is to investigate excited state dynamics of semiconductor systems using quantum computational techniques. The detailed ultrafast photoinduced processes, such as charge recombination, charge relaxation, energy/charge transfer, etc., sometimes cannot be fully addressed by spectroscopy experiments. The nonadiabatic molecular dynamics (NAMD), on the other hand, provides critical insights into the complex processes. In this thesis, we apply the NAMD simulation method to various semiconductor systems, ranging from bulk crystals, nanoparticles to clusters, to study the electronic and optical properties of semiconductors. The first chapter outlines important concepts in excited states dynamics and semiconductor disciplinary. The second chapter explains the theoretical methodology related to the research work, including approximations, computational methods and simulation details, etc. Starting from chapter three to chapter six, we present a comprehensive study focusing on silicon clusters, cadmium selenide quantum dots, cycloparaphenylenes and perovskites. Potential applications include solar harvesting, photoluminescence, energy transfer, etc.

  20. Tunable High Brightness Semiconductor Sources

    DTIC Science & Technology

    2015-05-01

    AFRL-RY-WP-TR-2015-0066 TUNABLE HIGH BRIGHTNESS SEMICONDUCTOR SOURCES Robert Bedford, Saima Husaini, Charles Reyner, and Tuoc Dang...3. DATES COVERED (From - To) May 2015 Final 5 November 2010 – 1 February 2015 4. TITLE AND SUBTITLE TUNABLE HIGH BRIGHTNESS SEMICONDUCTOR SOURCES 5a...included within the Tunable High Brightness Semiconductor Sources work unit includes several technology advancements. First, theoretical advances in mid

  1. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  2. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  3. Electrodes for Semiconductor Gas Sensors.

    PubMed

    Lee, Sung Pil

    2017-03-25

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode-semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode-semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect.

  4. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  5. Response measurement of single-crystal chemical vapor deposition diamond radiation detector for intense X-rays aiming at neutron bang-time and neutron burn-history measurement on an inertial confinement fusion with fast ignition

    SciTech Connect

    Shimaoka, T. Kaneko, J. H.; Tsubota, M.; Arikawa, Y.; Nagai, T.; Kojima, S.; Abe, Y.; Sakata, S.; Fujioka, S.; Nakai, M.; Shiraga, H.; Azechi, H.; Isobe, M.; Sato, Y.; Chayahara, A.; Umezawa, H.; Shikata, S.

    2015-05-15

    A neutron bang time and burn history monitor in inertial confinement fusion with fast ignition are necessary for plasma diagnostics. In the FIREX project, however, no detector attained those capabilities because high-intensity X-rays accompanied fast electrons used for plasma heating. To solve this problem, single-crystal CVD diamond was grown and fabricated into a radiation detector. The detector, which had excellent charge transportation property, was tested to obtain a response function for intense X-rays. The applicability for neutron bang time and burn history monitor was verified experimentally. Charge collection efficiency of 99.5% ± 0.8% and 97.1% ± 1.4% for holes and electrons were obtained using 5.486 MeV alpha particles. The drift velocity at electric field which saturates charge collection efficiency was 1.1 ± 0.4 × 10{sup 7} cm/s and 1.0 ± 0.3 × 10{sup 7} cm/s for holes and electrons. Fast response of several ns pulse width for intense X-ray was obtained at the GEKKO XII experiment, which is sufficiently fast for ToF measurements to obtain a neutron signal separately from X-rays. Based on these results, we confirmed that the single-crystal CVD diamond detector obtained neutron signal with good S/N under ion temperature 0.5–1 keV and neutron yield of more than 10{sup 9} neutrons/shot.

  6. Response measurement of single-crystal chemical vapor deposition diamond radiation detector for intense X-rays aiming at neutron bang-time and neutron burn-history measurement on an inertial confinement fusion with fast ignition.

    PubMed

    Shimaoka, T; Kaneko, J H; Arikawa, Y; Isobe, M; Sato, Y; Tsubota, M; Nagai, T; Kojima, S; Abe, Y; Sakata, S; Fujioka, S; Nakai, M; Shiraga, H; Azechi, H; Chayahara, A; Umezawa, H; Shikata, S

    2015-05-01

    A neutron bang time and burn history monitor in inertial confinement fusion with fast ignition are necessary for plasma diagnostics. In the FIREX project, however, no detector attained those capabilities because high-intensity X-rays accompanied fast electrons used for plasma heating. To solve this problem, single-crystal CVD diamond was grown and fabricated into a radiation detector. The detector, which had excellent charge transportation property, was tested to obtain a response function for intense X-rays. The applicability for neutron bang time and burn history monitor was verified experimentally. Charge collection efficiency of 99.5% ± 0.8% and 97.1% ± 1.4% for holes and electrons were obtained using 5.486 MeV alpha particles. The drift velocity at electric field which saturates charge collection efficiency was 1.1 ± 0.4 × 10(7) cm/s and 1.0 ± 0.3 × 10(7) cm/s for holes and electrons. Fast response of several ns pulse width for intense X-ray was obtained at the GEKKO XII experiment, which is sufficiently fast for ToF measurements to obtain a neutron signal separately from X-rays. Based on these results, we confirmed that the single-crystal CVD diamond detector obtained neutron signal with good S/N under ion temperature 0.5-1 keV and neutron yield of more than 10(9) neutrons/shot.

  7. Initial stages of the development of semiconductor electronics in the Soviet union (60 years from the Invention of the Transistor)

    SciTech Connect

    Stafeev, V. I.

    2010-05-15

    The most important results of the early work of Soviet scientists in the research and development in the fields of semiconductors and semiconductor devices are reported, including results that are almost unknown now but played an important role in the development of semiconductor electronics in the Soviet Union.

  8. Nanoscale Semiconductor Electronics

    DTIC Science & Technology

    2015-02-25

    MONITOR’S REPORT Kirtland AFB, NM 87117-5776 NUMBER(S) AFRL -RV-PS-TR-2014-0202 12. DISTRIBUTION / AVAILABILITY STATEMENT Approved for public release...Kingman Rd, Suite 0944 Ft Belvoir, VA 22060-6218 1 cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSE/Jesse Mee 1 cy ... AFRL -RV-PS- AFRL -RV-PS- TR-2014-0202 TR-2014-0202 NANOSCALE SEMICONDUCTOR ELECTRONICS Steven R. J. Brueck and Ganesh Balakrishnan University of New

  9. Electrowetting on semiconductors

    NASA Astrophysics Data System (ADS)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  10. Semiconductor cooling apparatus

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A. (Inventor); Gaier, James R. (Inventor)

    1993-01-01

    Gas derived graphite fibers generated by the decomposition of an organic gas are joined with a suitable binder. This produces a high thermal conductivity composite material which passively conducts heat from a source, such as a semiconductor, to a heat sink. The fibers may be intercalated. The intercalate can be halogen or halide salt, alkaline metal, or any other species which contributes to the electrical conductivity improvement of the graphite fiber. The fibers are bundled and joined with a suitable binder to form a high thermal conductivity composite material device. The heat transfer device may also be made of intercalated highly oriented pyrolytic graphite and machined, rather than made of fibers.

  11. Microwave semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sitch, J. E.

    1985-03-01

    The state of the art of microwave semiconductor design is reviewed, with emphasis on developments of the past 10-12 years. Consideration is given to: varistor diodes; varactor diodes; and transit time negative diodes. The design principles of bipolar and unipolar transistors are discussed, with reference to power FETs, traveling-wave FETs, and camel or planar-doped barrier transistors. Recent innovations in the field of fabrication technology are also considered, including: crystal growth; doping; and packaging. Several schematic drawings and photographs of the different devices are provided.

  12. Semiconductor Terahertz Technology

    DTIC Science & Technology

    2009-06-15

    COVERED (From - To) 15-June-2009 Final Report 12 Apr 07 - 15 Apr 09 4. TITLE AND SUBTITLE Sa. CONTRACT NUMBER FA8718-07-C-0030 Semiconductor Terahertz ...and the other for the phononic waveguides. 15. SUBJECT TERMS Quantum cascade laser, gennanium, gennanium-tin, terahertz 16. SECURITY CLASStFICATION OF...7 Figure 7 lllustration of a GaAs-based active region waveguide with either Ga or Au as cladding operating in the Restrahlen band of GaN . 10 Figure 8

  13. Chemically Derivatized Semiconductor Photoelectrodes.

    DTIC Science & Technology

    1982-01-04

    as Si, Ge, and GaAs derivatized with reagents based on ferrocene such as those represented by I and II. Work with p-type semiconductor photoelectrode...Concerning n-type Si it was found that EtOH/0.1 M En-Bu4N)C104 solutions containing A = ferrocene and A+ = ferri-- cinium result in a constant output of...electrical energy from an illuminated photoelectrochemical device configured as in Scheme II.(20) The ferrocene captures the photogenerated h+ at a rate -4

  14. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  15. Power semiconductor controlled drives

    NASA Astrophysics Data System (ADS)

    Dubey, Gopal K.

    This book presents power semiconductor controlled drives employing dc motors, induction motors, and synchronous motors. The dynamics of motor and load systems are covered. Open-loop and closed-loop drives are considered, and thyristor, power transistor, and GTO converters are discussed. In-depth coverage is given to ac drives, particularly those fed by voltage and current source inverters and cycloconverters. Full coverage is given to brushless and commutatorless dc drives, including load-commuted synchronous motor drives. Rectifier-controlled dc drives are presented in detail.

  16. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  17. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  18. Architectures for Improved Organic Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  19. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    NASA Astrophysics Data System (ADS)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  20. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  1. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, Rommel; Chen, Yih-Wen

    1987-01-01

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  2. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  3. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  4. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  5. Progress in semiconductor drift detectors

    SciTech Connect

    Rehak, P.; Walton, J.; Gatti, E.; Longoni, A.; Sanpietro, M.; Kemmer, J.; Dietl, H.; Holl, P.; Klanner, R.; Lutz, G.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements.

  6. NATO Advanced Research Workshop: Frontiers of Optical Phenomena in Semiconductor Structure of Reduced Dimension, Held in Yountville, California on 27-31 July 1992

    DTIC Science & Technology

    1992-07-31

    A/ -A OFFICE OF NAVAL RESEARCH FINAL REPORT - for 00 Grant Number N00014-92-J-1557 F - F NATO ADVANCED RESEARCH WORKSHOP FRONTIERS OF OPTICAL PHENOMENA...Physics McMaster University 1280 Main Street West Hamilton, Ontario LSS 4M1 CANADA Dr. B. Deveaud C.N.E.T., LAB/OCM F -22301 Lannion Cedex FRANCE 2 Dr. C...Weisbuch Thomson - CSF Laboratoire Central de Recherches Domaine de Corbeville F -9 1404 Orsay Cedex FRANCE Professor Dr. G. Abstreiter Walter Schottky

  7. Semiconductor quantum dot-sensitized solar cells.

    PubMed

    Tian, Jianjun; Cao, Guozhong

    2013-10-31

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  8. Semiconductor quantum dot-sensitized solar cells

    PubMed Central

    Tian, Jianjun; Cao, Guozhong

    2013-01-01

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178

  9. Optimizing biased semiconductor superlattices for terahertz amplification

    SciTech Connect

    Lei, Xiaoli; Wang, Dawei; Wu, Zhaoxin; Dignam, M. M.

    2014-08-11

    Over the past 15 yr or more, researchers have been trying to achieve gain for electromagnetic fields in the terahertz frequency region using biased semiconductor superlattices, but with little success. In this work, we employ our model of the excitonic states in biased GaAs/Al{sub 0.3}Ga{sub 0.7}As semiconductor superlattices to find the optimal structures for amplification of terahertz radiation. In particular, we determine the optimum well width, barrier width, and bias field for terahertz fields with frequencies ranging from 1 to 4 terahertz. We find that gain coefficients on the order of 40 cm{sup −1} should be achievable over most of this frequency range.

  10. Semiconductors: A pillar of pure and applied physics

    NASA Astrophysics Data System (ADS)

    Chelikowsky, James R.; Cohen, Marvin L.

    2015-03-01

    We give an overview of the central role semiconductor research that has played in basic, applied, and computational science. Our focus is on basic science. However, we will make general comments about applications, such as the transistor, integrated circuits, solar devices, and lasers, which evolved from basic research, and about simulations using computational science, which has enormously benefited from semiconductor research. We will make reference to links with other branches of physics and more generally other areas of science and fields like electrical engineering, computer science, material science, medical science, and chemistry that have made significant contributions to our everyday life.

  11. Photocatalysis Using Semiconductor Nanoclusters

    SciTech Connect

    Thurston, T.R.; Wilcoxon,J.P.

    1999-01-21

    We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

  12. Semiconductor adiabatic qubits

    DOEpatents

    Carroll, Malcolm S.; Witzel, Wayne; Jacobson, Noah Tobias; Ganti, Anand; Landahl, Andrew J.; Lilly, Michael; Nguyen, Khoi Thi; Bishop, Nathaniel; Carr, Stephen M.; Bussmann, Ezra; Nielsen, Erik; Levy, James Ewers; Blume-Kohout, Robin J.; Rahman, Rajib

    2016-12-27

    A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.

  13. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  14. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  15. State of the art in semiconductor detectors

    SciTech Connect

    Rehak, P. ); Gatti, E. )

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs.

  16. Wurtzite-derived ternary I-III-O2 semiconductors.

    PubMed

    Omata, Takahisa; Nagatani, Hiraku; Suzuki, Issei; Kita, Masao

    2015-04-01

    Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I-III-O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I-III-O2 semiconductors.

  17. Wurtzite-derived ternary I–III–O2 semiconductors

    PubMed Central

    Nagatani, Hiraku; Suzuki, Issei; Kita, Masao

    2015-01-01

    Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors. PMID:27877769

  18. "Dip-Pen" nanolithography on semiconductor surfaces.

    PubMed

    Ivanisevic, A; Mirkin, C A

    2001-08-15

    Dip-Pen Nanolithography (DPN) uses an AFM tip to deposit organic molecules through a meniscus onto an underlying substrate under ambient conditions. Thus far, the methodology has been developed exclusively for gold using alkyl or aryl thiols as inks. This study describes the first application of DPN to write organic patterns with sub-100 nm dimensions directly onto two different semiconductor surfaces: silicon and gallium arsenide. Using hexamethyldisilazane (HMDS) as the ink in the DPN procedure, we were able to utilize lateral force microscopy (LFM) images to differentiate between oxidized semiconductor surfaces and patterned areas with deposited monolayers of HMDS. The choice of the silazane ink is a critical component of the process since adsorbates such as trichlorosilanes are incompatible with the water meniscus and polymerize during ink deposition. This work provides insight into additional factors, such as temperature and adsorbate reactivity, that control the rate of the DPN process and paves the way for researchers to interface organic and biological structures generated via DPN with electronically important semiconductor substrates.

  19. Surface plasmon based engineering of semiconductor nanowire optics

    NASA Astrophysics Data System (ADS)

    Aspetti, Carlos Octavio

    Semiconductor nanowires combine the material properties of semiconductors, which are ubiquitous in modern technology, with nanoscale dimensions and as such, are firmly poised at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics, in particular, arises from the increased interaction between light and matter that occurs when light is confined to dimensions below the size of its wavelength, in other words, when the nanowire serves as a light trapping optical cavity, which itself is also a source of light. Light confinement is taken to new extremes by coupling to the surface plasmon modes of metallic nanostructures, where light acquires mixed photonic and electronic character, and which may focus light to deep-subwavelength regions amenable to the dimensions of the electron wave. This thesis examines how the integration of "plasmonic optical cavities" and semiconductor nanowires leads to substantial modification (and enhancement) of the optical properties of the same, resulting in orders-of-magnitude faster and more efficient light emission with colors that may be tuned as a function of optical cavity geometry. Furthermore, this method is applied to nanowires composed of both direct and indirect bandgap semiconductor materials resulting in applications such as light emission from high-energy states in light emitting materials, highly enhanced broadband light emission from nominally non-light emitting (dark) materials, and broadband (and anomalous) enhancement of light absorption in various materials, all the while maintaining the unifying theme of employing integrated plasmonic-semiconductor optical cavities to achieve tailored optical properties. We begin with a review of the electromagnetic properties of optical cavities, surface plasmon-enhanced light emission in semiconductors, and the key physical properties of semiconductor nanowires. It goes without saying that this thesis work resides at the interface between optical

  20. Semiconductor plasmonic nanolasers: current status and perspectives

    NASA Astrophysics Data System (ADS)

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core-shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier.

  1. Photoemission studies of semiconductor nanocrystals

    SciTech Connect

    Hamad, K. S.; Roth, R.; Alivisatos, A. P.

    1997-04-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface.

  2. Photoelectrochemistry of Semiconductor Nanowire Arrays

    SciTech Connect

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  3. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  4. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  5. Signal processing for semiconductor detectors

    SciTech Connect

    Goulding, F.S.; Landis, D.A.

    1982-02-01

    A balanced perspective is provided on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed.

  6. Optical properties of semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Son, Joong-Kon

    Thanks to the difference in energy gap between two semiconductors and to their different indices of refraction, semiconductor heterostructures can confine electrons as well as photons. This property makes it possible to build semiconductor-based optical resonators (microcavities) with a radiation dipole (a quantum well) in its midst to investigate the coupling between the optical modes of the microcavity with the exciton modes of the quantum well. Such an interaction, besides its intrinsic interest, is relevant to vertically-emitting semiconductor lasers, based on the quantum well- microcavity system. In this thesis, we will present experimental evidence of temperature and electric-field dependent exciton-cavity coupling in GaAs-GaAlAs microcavities.

  7. EDITORIAL: The 24th Nordic Semiconductor Meeting The 24th Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    Páll Gunnlaugsson, Haraldur; Nylandsted Larsen, Arne; Uhrenfeldt, Christian

    2012-03-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a Topical Issue of Physica Scripta. All of the papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This 24th meeting of the Nordic Semiconductor community, NSM 2011, was held at Fuglsøcentret, close to Aarhus, Denmark, 19-22 June 2011. Support was provided by the Carlsberg Foundation, Danfysik and the semiconductor group at Aarhus University. Over 30 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The aim of the meeting was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. The 25th Nordic Semiconductor Meeting will be organized in June 2013 in Finland, chaired by Dr Filip Tuomisto, Aalto University. A Nordic Summer School on Semiconductor Science will be organized in connection with the conference (just before), chaired by Dr Jonatan Slotte, Aalto University. Information on these events can be found at physics.aalto.fi/nsm2013. List of participants Søren Vejling

  8. Growth of 450 mm diameter semiconductor grade silicon crystals

    NASA Astrophysics Data System (ADS)

    Lu, Zheng; Kimbel, Steven

    2011-03-01

    Research and development of the next generation 450 mm semiconductor grade silicon crystal and related technology have been carried out in MEMC following the company's philosophy to stay one generation ahead on research and development. The first 450 mm dislocation free crystal was grown in early 2009 and the first 450 mm semiconductor wafer was produced shortly after. General challenges in crystal growth process, puller, and hot zone designs, as well as control, automation, and handling are discussed in this paper. General considerations on working with customers and equipment manufacturers on fundamental crystal and wafer quality characteristics are also discussed.

  9. Enhanced radiation detectors using luminescent materials

    DOEpatents

    Vardeny, Zeev V.; Jeglinski, Stefan A.; Lane, Paul A.

    2001-01-01

    A radiation detecting device comprising a radiation sensing element, and a layer of luminescent material to expand the range of wavelengths over which the sensing element can efficiently detect radiation. The luminescent material being selected to absorb radiation at selected wavelengths, causing the luminescent material to luminesce, and the luminescent radiation being detected by the sensing element. Radiation sensing elements include photodiodes (singly and in arrays), CCD arrays, IR detectors and photomultiplier tubes. Luminescent materials include polymers, oligomers, copolymers and porphyrines, Luminescent layers include thin films, thicker layers, and liquid polymers.

  10. Space Radiation Detector with Spherical Geometry

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

    2011-01-01

    A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

  11. Space Radiation Detector with Spherical Geometry

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

    2012-01-01

    A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

  12. Multipurpose High Sensitivity Radiation Detector: Terradex

    NASA Astrophysics Data System (ADS)

    Alpat, Behcet; Aisa, Damiano; Bizzarri, Marco; Blasko, Sandor; Esposito, Gennaro; Farnesini, Lucio; Fiori, Emmanuel; Papi, Andrea; Postolache, Vasile; Renzi, Francesca; Ionica, Romeo; Manolescu, Florentina; Ozkorucuklu, Suat; Denizli, Haluk; Tapan, Ilhan; Pilicer, Ercan; Egidi, Felice; Moretti, Cesare; Dicola, Luca

    2007-05-01

    Terradex project aims to realise an accurate and programmable multiparametric tool which will measure relevant physical quantities such as observation time, energy and type of all decay products of three naturally occurring decay chains of uranium and thorium series present in nature as well as the decay products of man-made radioactivity. The measurements described in this work are based on the performance tests of the first version of an instrument that is designed to provide high counting accuracy, by introducing self-triggering, delayed time-coincidence technique, of products of a given decay chain. In order to qualify the technique and to calibrate the Terradex, a 222Rn source is used. The continuous and accurate monitoring of radon concentration in air is realised by observing the alpha and beta particles produced by the decay of 222Rn and its daughters and tag each of them with a precise occurrence time. The validity of delayed coincident technique by using the state of the art electronics with application of novel data sampling and analysis methods are discussed. The flexibility of sampling protocols and the advantages of online calibration capability to achieve the highest level of precision in natural and man-made radiation measurements are also described.

  13. Modernization of radiation detectors thickness gauge

    NASA Astrophysics Data System (ADS)

    Artemyev, I. B.; Artemiev, B. V.; Vladimirov, Yu L.; Vladimirov, L. V.

    2017-02-01

    Currently, there is a tendency in the industry by refusing isotopic radiation sources in favor of the X-ray machines. This is due to several factors, main among them radiation safety and maintenance problems, movement and disposal of gamma-ray sources. Compared to the gamma ray-source these devices have a number of disadvantages. The spectral energy distribution and therefore change in the spectrum as the radiation passes through the controlled material. Instability of radiation compared with gamma sources. All this complicates the use of X-ray sources for the materials thickness measurement with different chemical compositions.

  14. Window for radiation detectors and the like

    DOEpatents

    Sparks, C.J. Jr.; Ogle, J.C.

    1975-10-28

    An improved x- and gamma-radiation and particle transparent window for the environment-controlling enclosure of various types of radiation and particle detectors is provided by a special graphite foil of a thickness of from about 0.1 to 1 mil. The graphite must have very parallel hexagonal planes with a mosaic spread no greater than 5$sup 0$ to have the necessary strength in thin sections to support one atmosphere or more of pressure. Such graphite is formed by hot- pressing and annealing pyrolytically deposited graphite and thereafter stripping off layers of sufficient thickness to form the window.

  15. Dual amplitude pulse generator for radiation detectors

    DOEpatents

    Hoggan, Jerry M.; Kynaston, Ronnie L.; Johnson, Larry O.

    2001-01-01

    A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

  16. Three-axis asymmetric radiation detector system

    DOEpatents

    Martini, Mario Pierangelo; Gedcke, Dale A.; Raudorf, Thomas W.; Sangsingkeow, Pat

    2000-01-01

    A three-axis radiation detection system whose inner and outer electrodes are shaped and positioned so that the shortest path between any point on the inner electrode and the outer electrode is a different length whereby the rise time of a pulse derived from a detected radiation event can uniquely define the azimuthal and radial position of that event, and the outer electrode is divided into a plurality of segments in the longitudinal axial direction for locating the axial location of a radiation detection event occurring in the diode.

  17. Two-dimensional position sensitive radiation detectors

    DOEpatents

    Mihalczo, J.T.

    1994-02-22

    Nuclear reaction detectors capable of position sensitivity with submillimeter resolution in two dimensions are each provided by placing arrays of scintillation or wavelength shifting optical fibers formed of a plurality of such optical fibers in a side-by-side relationship in X and Y directions with a layer of nuclear reactive material operatively associated with surface regions of the optical fiber arrays. Each nuclear reaction occurring in the layer of nuclear reactive material produces energetic particles for simultaneously providing a light pulse in a single optical fiber in the X oriented array and in a single optical fiber in the Y oriented array. These pulses of light are transmitted to a signal producing circuit for providing signals indicative of the X-Y coordinates of each nuclear event. 6 figures.

  18. Two-dimensional position sensitive radiation detectors

    DOEpatents

    Mihalczo, John T.

    1994-01-01

    Nuclear reaction detectors capable of position sensitivity with submillimeter resolution in two dimensions are each provided by placing arrays of scintillation or wave length shifting optical fibers formed of a plurality of such optical fibers in a side-by-side relationship in X and Y directions with a layer of nuclear reactive material operatively associated with surface regions of the optical fiber arrays. Each nuclear reaction occurring in the layer of nuclear reactive material produces energetic particles for simultaneously providing a light pulse in a single optical fiber in the X oriented array and in a single optical fiber in the Y oriented array. These pulses of light are transmitted to a signal producing circuit for providing signals indicative of the X-Y coordinates of each nuclear event.

  19. Nano structural anodes for radiation detectors

    DOEpatents

    Cordaro, Joseph V.; Serkiz, Steven M.; McWhorter, Christopher S.; Sexton, Lindsay T.; Retterer, Scott T.

    2015-07-07

    Anodes for proportional radiation counters and a process of making the anodes is provided. The nano-sized anodes when present within an anode array provide: significantly higher detection efficiencies due to the inherently higher electric field, are amenable to miniaturization, have low power requirements, and exhibit a small electromagnetic field signal. The nano-sized anodes with the incorporation of neutron absorbing elements (e.g., .sup.10B) allow the use of neutron detectors that do not use .sup.3He.

  20. Imaging Using Energy Discriminating Radiation Detector Array

    SciTech Connect

    Willson, Paul D.; Clajus, Martin; Tuemer, Tuemay O.; Visser, Gerard; Cajipe, Victoria

    2003-08-26

    Industrial X-ray radiography is often done using a broad band energy source and always a broad band energy detector. There exist several major advantages in the use of narrow band sources and or detectors, one of which is the separation of scattered radiation from primary radiation. ARDEC has developed a large detector array system in which every detector element acts like a multi-channel analyzer. A radiographic image is created from the number of photons detected in each detector element, rather than from the total energy absorbed in the elements. For high energies, 25 KeV to 4 MeV, used in radiography, energy discriminating detectors have been limited to less than 20,000 photons per second per detector element. This rate is much too slow for practical radiography. Our detector system processes over two million events per second per detector pixel, making radiographic imaging practical. This paper expounds on the advantages of the ARDEC radiographic imaging process.

  1. Dye Sensitization of Semiconductor Particles

    SciTech Connect

    Hartland, G. V.

    2003-01-13

    In this project electron transfer at semiconductor liquid interfaces was examined by ultrafast time-resolved and steady-state optical techniques. The experiments primarily yielded information about the electron transfer from titanium dioxide semiconductor particles to absorbed molecules. The results show that the rate of electron transfer depends on the structure of the molecule, and the crystalline phase of the particle. These results can be qualitatively explained by Marcus theory for electron transfer.

  2. Semiconductor crystal high resolution imager

    NASA Technical Reports Server (NTRS)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  3. Laser Assisted Semiconductor Device Processing

    DTIC Science & Technology

    1980-11-30

    In strongly absorbing semiconductors, the dominant absorption mechanism at frequencies higher than the bandgap frequency is interband transitions. The...current). The solution for miconductors. In strongly absorbing semiconductors, the n(x,t ) is a closed-form expression consisting of complemen- dominant 0...representative profles are shown in Fis. $-12. o -- For Nd: YAG in silicon. E, _0.99hv and the profiks are therefore and-gap recombination dominated

  4. Research on defects and transport in amorphous silicon-based semiconductors. Annual subcontract report, 20 February 1991--19 February 1992

    SciTech Connect

    Schiff, E.A.; Antoniadis, H.; Lee, J.K.; Wang, Q.

    1992-04-01

    This report describes the results from research on two topics: (1) the effects of light-soaking on the electron drift mobility in a-Si:H, and (2) modulated electron spin resonance measurements and their relationship to the electronic correlation energy of the D center in a-Si:H. Both of these projects were undertaken to better determine where the ``standard`` model for a-Si:H breaks down. The standard model is reasonably successful in accounting for the most elementary ``deep trapping`` aspects of electron and hole transport in a-Si:H, and it accounts adequately for the sub-band-gap optical properties. However, it is much less clear whether it provides a sufficient basis for understanding several effects which are crucial in operating solar cells: electron and hole mobilities and recombination in the presence of light-bias and space-charge. In the standard model, one would not expect significant effects on drift mobilities due to light-soaking, which would be envisioned as simply increasing the D-center density. Similarly, in the standard model one would not anticipate a significant temperature dependence to electron spin resonance, because essentially all spins are already detected. Discussions in the available literature on the evidence regarding both effects were inconclusive. The work reported here sets considerably more stringent constraints on the magnitude of the two effects.

  5. Research on defects and transport in amorphous-silicon-based semiconductors. Final subcontract report, 20 February 1991--19 April 1994

    SciTech Connect

    Schiff, E.A.; Antoniadis, H.; Gu, Q.; Lee, J.K.; Wang, Q.; Zafar, S.

    1994-09-01

    This report describes work on three individual tasks as follows. (1) Electron and hole drift measurements in a-Si{sub 1-x}Ge{sub x}:H and a-Si{sub 1-x}C{sub x}:H p-i-n solar cells. Multijunction solar cells incorporating modified band gap a-Si:H in a triple-junction structure are generally viewed as the most promising avenue for achieving an amorphous silicon-based solar call with 15% stabilized conversion efficiency. The specific objective of this task was to document the mobilities and deep-trapping mobility-lifetime products for electrons and holes in a-Si{sub 1-x}Ge{sub x}:H and a-Si{sub 1-x}C{sub x}:H alloys materials. (2) Electroabsorption measurements and built-in potential (V{sub bi}) in solar cells. V{sub bi} in a p-i-n solar call may be limiting the open-circuit voltage (V{sub oc}) in wide-band-gap cells (E{sub g} > 1.8 eV) currently under investigation as the top cell for 15% triple junction devices. The research addressed four issues that need to be resolved before the method can yield an error less than 0.1 V for V{sub bi}. The details are presented in this report. (3) Defect relaxation and Shockley-Read kinetics in a-Si:H. Quantitative modeling of solar cells is usually based on Shockley-Read kinetics.`` An important assumption of this approach is that the rate of emission of a photocarrier trapped on a defect is independent of quasi-Fermi level location.

  6. Impurity gettering in semiconductors

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  7. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  8. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Employment and Training Administration Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical Information Center, Woburn, MA; Amended Certification Regarding... Semiconductor, Inc., Technical Information Center, Tempe, Arizona. The notice was published in the...

  9. Optically pumped nuclear magnetic resonance of semiconductors.

    PubMed

    Hayes, Sophia E; Mui, Stacy; Ramaswamy, Kannan

    2008-02-07

    Optically pumped NMR (OPNMR) of direct gap and indirect gap semiconductors has been an area of active research interest, motivated by both basic science and technological perspectives. Proposals to enhance and to spatially localize nuclear polarization have stimulated interest in this area. Recent progress in OPNMR has focused on exploring the experimental parameter space in order to elucidate details of the underlying photophysics of optical pumping phenomena. The focus of this review is on recent studies of bulk samples of GaAs and InP, namely, the photon energy dependence, the magnetic field dependence, and the phase dependence of OPNMR resonances. Models for the development of nuclear polarization are discussed.

  10. Nanoscale chirality in metal and semiconductor nanoparticles.

    PubMed

    Kumar, Jatish; Thomas, K George; Liz-Marzán, Luis M

    2016-10-18

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided.

  11. Nanoscale chirality in metal and semiconductor nanoparticles

    PubMed Central

    Thomas, K. George

    2016-01-01

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided. PMID:27752651

  12. Shielding Electrostatic Fields in Polar Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Hönig, G. M. O.; Westerkamp, S.; Hoffmann, A.; Callsen, G.

    2017-02-01

    Polar semiconductor materials enable a variety of classic and quantum-light sources, which are optimized continuously. However, one key problem—the inherent electric crystal polarization of such materials—remains unsolved and deteriorates the radiative exciton decay rate. We suggest a sequence of reverse interfaces to compensate these polarization effects, while the polar, natural crystal growth direction is maintained. Former research approaches, like growth on less-polar crystal planes or even the stabilization of unnatural phases, never reached industrial maturity. In contrast, our concept provides a way for the development of ultrafast devices based on established growth processes for polar materials, while the electric potential landscape becomes adjustable.

  13. The stand for research and testing of layout of ultraviolet photo-polarimeter (UPP)

    NASA Astrophysics Data System (ADS)

    Sorochynskyi, R. R.; Nevodovskyi, P. V.; Vidmachenko, A. P.; Herayimchuk, M. D.; Ivakhiv, O. V.

    2016-05-01

    For debugging, research and testing as a model of UPP in the complex and its individual parts we created a special stand with a complex set of equipment. The stand consists of: radiation block with variable sources of radiation; detector block with a set of measuring equipment; block of registration and analysis of radiation polarization; block with a set of different power supplies; block of variable high voltage. To use this stand we have also developed the corresponding software and more

  14. Dielectric screening in semiconductors

    NASA Astrophysics Data System (ADS)

    Harrison, Walter A.; Klepeis, John E.

    1988-01-01

    Intra-atomic and interatomic Coulomb interactions are incorporated into bond-orbital theory, based upon universal tight-binding parameters, in order to treat the effects of charge redistribution in semiconductor bonds. The dielectric function ɛ(q) is obtained for wave numbers in a [100] direction. The screening of differences in average hybrid energy across a heterojunction is calculated in detail, indicating that the decay length for the potential depends upon the relative values of Madelung and intra-atomic Coulomb terms. The parameters used here predict an imaginary decay length and thus an oscillating potential near the interface. The same theory is applied to point defects by imbedding a cluster in a matrix lattice, taking charges in that lattice to be consistent with continuum theory. Illustrating the theory with a phosphorus impurity in silicon, it is seen that the impurity and its neighboring atoms have charges on the order of only one-tenth of an electronic charge, alternating in sign from neighbor to neighbor as for planar defects. Although there are shifts in the term values on the order of a volt, the difference in these shifts for neighboring atoms is much smaller so that the effect on the bonds is quite small. This behavior is analogous to the response of a dielectric continuum to a point charge: The medium is locally neutral except at the center of the cluster and there are slowly varying potentials e2/ɛr. Because of this slow variation, free-atom term values should ordinarily suffice for the calculation of bond properties and bond lengths at impurities. Corrections are larger for homovalent substitutions such as carbon in silicon.

  15. Research on Semiconductors at Cryogenic Temperatures

    DTIC Science & Technology

    1988-06-26

    obtained by Van der Pauw method is in ohms per square ....................... 22 Figure 16. Resistance (ohms per square) for samples A, B, and C versus...and 0 versus temperature. R h was obtained by Van der Pauw method with magnetic field normal to the (100) surface ....................... 26 Figure...The Hall and resistivity measurements were made by the standard four-point Van der Pauw method. The samples were either square (0.25 inch) or

  16. Microwave Semiconductor Research - Materials, Devices, Circuits.

    DTIC Science & Technology

    1982-04-30

    without notches , and interdigitated OPFETs with and without notches . The real response of the interdigitated detectors taken with a scanning laser...results show the slower detectors without notches have response speeds on the order of 200 ps. Measurements are in progress on the much faster notched ...required metallization. The third step consists of defining uniform I micron gates using a projection mask aligner, etching self- aligned notches in

  17. Microwave, Semiconductor Research - Materials, Devices and Circuits.

    DTIC Science & Technology

    1984-03-01

    Appl. Phys., 53 (9) 6208-6213 (Sept. 1982). 1. 2. "Investigation of Capless Heat Treatment of MBE n-GaAs", S.H. Xin, W.J. Schaff, C.E.C. Wood and L.F...4 I 4. "Capped Versus Capless Heat Treatment of MBE n-GaAs", S.H. Xin, W.J. Schaff, C.E.C. Wood and L.F. Eastman, Appl. Phys. Lett., 41 (8) 742...Capless Heat Treatment of Molecular Beam Epitaxial GaAs", S.H. Xin, W.J. Schaff, C.E.C. Wood and L.F. Eastman, Appl. Phys. Lett., 41 (8) 742-744 (Oct

  18. Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductors.

    DTIC Science & Technology

    1986-02-18

    methods to quantum transport within the Liouville formulation. The second part concerns with fluctuations of carrier velocities and energies both in...interactions) on the transport properties. Keywords: Monte Carlo; Charge Transport; Quantum Transport ; Fluctuations; Semiconductor Physics; Master Equation...The present report contains technical matter related to the research performed on two different subjects. The first part concerns with quantum

  19. Technician Training for the Semiconductor Microdevices Industry. Final Report.

    ERIC Educational Resources Information Center

    Center for Occupational Research and Development, Inc., Waco, TX.

    The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of…

  20. Semiconductor Chemical Reactor Engineering and Photovoltaic Unit Operations.

    ERIC Educational Resources Information Center

    Russell, T. W. F.

    1985-01-01

    Discusses the nature of semiconductor chemical reactor engineering, illustrating the application of this engineering with research in physical vapor deposition of cadmium sulfide at both the laboratory and unit operations scale and chemical vapor deposition of amorphous silicon at the laboratory scale. (JN)

  1. The Excitation Mechanism of Praseodymium-Doped Semiconductors

    DTIC Science & Technology

    1994-06-01

    7. Ptaseodymium Implant List ........................................................ 32 8. Praseodymium Implant Characteristics (390 keV...15. Erbium Implant Characteristics (1 MeV) ........................................ 103 16. Pr and Codope Element Implantion Characteristics in Alo.0...Semiconductors are the choice as host material since, as injection mode diodes, they can electrically pump RE luminescence. Researchers have worked

  2. Thienoacene-based organic semiconductors.

    PubMed

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors.

  3. Diamagnetic excitons in semiconductors (Review)

    NASA Astrophysics Data System (ADS)

    Seisyan, R. P.

    2016-05-01

    Optical properties of semiconductor crystals in the presence of a high magnetic field have been considered. The field turn-on gives rise to oscillations of the optical-absorption edge or, more specifically, the formation of a complex absorption spectrum with a periodic structure, referred to as the spectrum of "diamagnetic excitons." Such spectra appear a source of the most accurate knowledge about the band structure of semiconductors. Moreover, these spectra can be used for simulating the low-dimensional state in semiconductors and possible interpretation of the emission spectra of neutron stars. The proposed analytical review is based on extensive experimental and theoretical data contained mostly in cited original works of the author with colleagues.

  4. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  5. Assessing the benefits of OHER (Office of Health and Environmental Research) research: Three case studies

    SciTech Connect

    Nesse, R.J.; Callaway, J.M.; Englin, J.E.; Klan, M.S.; Nicholls, A.K.; Serot, D.E.

    1987-09-01

    This research was undertaken to estimate the societal benefits and costs of selected past research performed for the Office of Health and Environmental Research (OHER) of the US Department of Energy (DOE). Three case studies of representative OHER and DOE research were performed. One of these, the acid rain case study, includes research conducted elsewhere in DOE. The other two cases were the OHER marine research program and the development of high-purity germanium that is used in radiation detectors. The acid rain case study looked at the research benefits and costs of furnace sorbent injection and duct injection, technologies that might reduce acid deposition precursors. Both appear to show benefits in excess of costs. We examined in detail one of the OHER marine research program's accomplishments - the increase in environmental information used by the Outer Continental Shelf leasing program to manage bidding for off-shore oil drilling. The results of an econometric model show that environmental information of the type supported by OHER is unequivocally linked to government and industry leasing decisions. The germanium case study indicated that the benefits of germanium radiation detectors were significant.

  6. Delta-doping of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schubert, E. F.

    2005-08-01

    Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

  7. Superconducting qubits with semiconductor nanowire Josephson junctions

    NASA Astrophysics Data System (ADS)

    Petersson, K. D.; Larsen, T. W.; Kuemmeth, F.; Jespersen, T. S.; Krogstrup, P.; Nygård, J.; Marcus, C. M.

    2015-03-01

    Superconducting transmon qubits are a promising basis for a scalable quantum information processor. The recent development of semiconducting InAs nanowires with in situ molecular beam epitaxy-grown Al contacts presents new possibilities for building hybrid superconductor/semiconductor devices using precise bottom up fabrication techniques. Here, we take advantage of these high quality materials to develop superconducting qubits with superconductor-normal-superconductor Josephson junctions (JJs) where the normal element is an InAs semiconductor nanowire. We have fabricated transmon qubits in which the conventional Al-Al2O3-Al JJs are replaced by a single gate-tunable nanowire JJ. Using spectroscopy to probe the qubit we observe fluctuations in its level splitting with gate voltage that are consistent with universal conductance fluctuations in the nanowire's normal state conductance. Our gate-tunable nanowire transmons may enable new means of control for large scale qubit architectures and hybrid topological quantum computing schemes. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation and the European Commission.

  8. Quantum Transport in Semiconductor Devices

    DTIC Science & Technology

    1994-06-30

    TITLE AND SUBTITLE S. FUNDING NUMBERS " Quantum Transport in Semiconductor Devices" 6. AUTHOR(S) ,DftftLo3-91-6-oo 7 David K. Ferry 7. PERFORMING...OF ABSTRACT UNCLASSIFIED UNCLASSIFIED UNCLASSIFIED UL NZIN 1540-01-280-5500 Standard Form 298 (Rev 2-89) PrinCrlt>• oy ANSI SIC Z39-18 QUANTUM ... TRANSPORT IN SEMICONDUCTOR DEVICES Final Report on DAAL03-91-G-0067 (28461-EL) David K. Ferry, Principal Investigator Department of Electrical Engineering

  9. A brief history of ... semiconductors

    NASA Astrophysics Data System (ADS)

    Jenkins, Tudor

    2005-09-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival of this successful quantum theory of solids, together with a concentration on the growth of pure silicon and germanium and an understanding of their properties, saw an explosion in activity in semiconductor studies that has continued to this day.

  10. 3D Nanostructuring of Semiconductors

    NASA Astrophysics Data System (ADS)

    Blick, Robert

    2000-03-01

    Modern semiconductor technology allows to machine devices on the nanometer scale. I will discuss the current limits of the fabrication processes, which enable the definition of single electron transistors with dimensions down to 8 nm. In addition to the conventional 2D patterning and structuring of semiconductors, I will demonstrate how to apply 3D nanostructuring techniques to build freely suspended single-crystal beams with lateral dimension down to 20 nm. In transport measurements in the temperature range from 30 mK up to 100 K these nano-crystals are characterized regarding their electronic as well as their mechanical properties. Moreover, I will present possible applications of these devices.

  11. Wide band gap semiconductor templates

    DOEpatents

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  12. Nonlinear Peltier effect in semiconductors

    NASA Astrophysics Data System (ADS)

    Zebarjadi, Mona; Esfarjani, Keivan; Shakouri, Ali

    2007-09-01

    Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically for single parabolic band semiconductors assuming a shifted Fermi-Dirac electronic distribution under an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters affecting the nonlinear behavior are doping concentration, effective mass, and electron-phonon coupling. Current density thresholds at which nonlinear behavior is observable are extracted from numerical data. It is shown that the nonlinear Peltier effect can be used to enhance cooling of thin film microrefrigerator devices especially at low temperatures.

  13. Optical Processing With Photorefractive Semiconductors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1989-01-01

    Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

  14. Composition and bandgap-graded semiconductor alloy nanowires.

    PubMed

    Zhuang, Xiujuan; Ning, C Z; Pan, Anlian

    2012-01-03

    Semiconductor alloy nanowires with spatially graded compositions (and bandgaps) provide a new material platform for many new multifunctional optoelectronic devices, such as broadly tunable lasers, multispectral photodetectors, broad-band light emitting diodes (LEDs) and high-efficiency solar cells. In this review, we will summarize the recent progress on composition graded semiconductor alloy nanowires with bandgaps graded in a wide range. Depending on different growth methods and material systems, two typical nanowire composition grading approaches will be presented in detail, including composition graded alloy nanowires along a single substrate and those along single nanowires. Furthermore, selected examples of applications of these composition graded semiconductor nanowires will be presented and discussed, including tunable nanolasers, multi-terminal on-nanowire photodetectors, full-spectrum solar cells, and white-light LEDs. Finally, we will make some concluding remarks with future perspectives including opportunities and challenges in this research area.

  15. Metal/Semiconductor hybrid nanostructures for plasmon-enhanced applications.

    PubMed

    Jiang, Ruibin; Li, Benxia; Fang, Caihong; Wang, Jianfang

    2014-08-20

    Hybrid nanostructures composed of semiconductor and plasmonic metal components are receiving extensive attention. They display extraordinary optical characteristics that are derived from the simultaneous existence and close conjunction of localized surface plasmon resonance and semiconduction, as well as the synergistic interactions between the two components. They have been widely studied for photocatalysis, plasmon-enhanced spectroscopy, biotechnology, and solar cells. In this review, the developments in the field of (plasmonic metal)/semiconductor hybrid nanostructures are comprehensively described. The preparation of the hybrid nanostructures is first presented according to the semiconductor type, as well as the nanostructure morphology. The plasmonic properties and the enabled applications of the hybrid nanostructures are then elucidated. Lastly, possible future research in this burgeoning field is discussed.

  16. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  17. Semiconductor lasers vs LEDs in diagnostic and therapeutic medicine

    NASA Astrophysics Data System (ADS)

    Gryko, Lukasz; Zajac, Andrzej; Szymanska, Justyna; Blaszczak, Urszula; Palkowska, Anna; Kulesza, Ewa

    2016-12-01

    Semiconductor emitters are used in many areas of medicine, allowing for new methods of diagnosis, treatment and effective prevention of many diseases. The article presents selected areas of application of semiconductor sources in UVVIS- NIR range, where in recent years competition in semiconductor lasers and LEDs applications has been observed. Examples of applications of analyzed sources are indicated for LLLT, PDT and optical diagnostics using the procedure of color contrast. Selected results of LLLT research of the authors are presented that were obtained by means of the developed optoelectronic system for objectified irradiation and studies on the impact of low-energy laser and LED on lines of endothelial cells of umbilical vein. Usefulness of the spectrally tunable LED lighting system for diagnostic purposes is also demonstrated, also as an illuminator for surface applications - in procedure of variable color contrast of the illuminated object.

  18. Method of preparing nitrogen containing semiconductor material

    DOEpatents

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  19. Semiconductor Reliability--Another Field for Physicists.

    ERIC Educational Resources Information Center

    Derman, Samuel; Anderson, Wallace T.

    1994-01-01

    Stresses that an important industrial area is product reliability, especially for semiconductors. Suggests that physics students would benefit from training in semiconductors: the many modes of failure, radiation effects, and electrical contact problems. (MVL)

  20. Method and structure for passivating semiconductor material

    DOEpatents

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  1. Semiconductor structure and recess formation etch technique

    DOEpatents

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  2. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  3. Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Abramov, I. I.; Danilyuk, A. L.

    1997-08-01

    A kinetic model of coherent transport with self-organized carrier transfer via midband gap semiconductor states in metal-insulator-midband gap semiconductor-insulator-semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a result of continuous oscillations of charge carriers at midband gap semiconductor states.

  4. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, A.J.

    1985-02-19

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  5. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  6. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  7. Semiconductor nanocrystal-based phagokinetic tracking

    SciTech Connect

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  8. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  9. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  10. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  11. Handbook of Monochromatic XPS Spectra, Semiconductors

    NASA Astrophysics Data System (ADS)

    Crist, B. Vincent

    2000-10-01

    This handbook is one of three containing an invaluable collection of research grade XPS Spectra. Each handbook concentrates on a specific family of materials (the elements and their native oxides, semiconductors and polymers) and is entirely self-contained. The introductory section to each handbook includes comprehensive information about the XPS instrument used, the materials and the advanced methods used to collect the spectra. Energy resolution settings, instrument characteristics, energy referencing methods, traceability, energy scale calibration details and transmission function are all reported. Among the many valuable features included in each of these handbooks are: ? All spectra were measured by using AlK monochromatic X-rays ? All spectra were collected in a self-consistent manner to maximise data reliability and quality ? All peaks in the wide spectra are fully annotated and accompanied by detailed atom % tables that report BEs for each of the labelled peaks ? Each high-energy resolution spectrum is peak-fitted and accompanied by detailed tables containing binding energies, FWHMs and relative percentages. In this volume 'Semiconductors' are contained XPS Spectra from a wide range of semiconductive materials and related materials, a rare tool for scientists and analysts in this area. Exclusive features of this volume include: ? Binding energies are accurate to +/- 0.08eV ? Charge compensation was done with a flood-gun mesh-screen system ? Valence band spectra document the occupied density of states (DOS) and the fundamental electronic nature of the semi-conductive materials analysed ? Analyses were done: "as received", "freshly fractured in air", "ion etched" and "chemically treated" ? Alphabetically organised by chemical abbreviations for ease of locating each material This handbook is an invaluable reference for materials scientists and electrical engineers in industry, academia and government laboratories interested in the analysis of semiconductors

  12. Semiconductor films on flexible iridium substrates

    DOEpatents

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  13. Conductive Container for Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Rice, J. T.

    1986-01-01

    Container for semiconductor components not only protects them against mechanical damage but ensures they are not harmed by electrostatic discharges. Container holds components in fixed positions so they can be serialized and identified from their locations. Suitable for holding components during both storing and shipping. Originally developed for microwave diodes, container concept readily adaptable to transistors and integrated circuits.

  14. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  15. A Brief History of ... Semiconductors

    ERIC Educational Resources Information Center

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  16. Electronic Properties of Semiconductor Interfaces.

    DTIC Science & Technology

    1983-02-01

    AD-A130 745 ELECTRONIC PROPERTIES OF SEMICONDUCTOR INTERFACES(U) /; UNIVERSIDAD AUfONOMA DE MADRID (SPAIN) DEPT DE FISICA DEL ESTADO SOLIDO F FLORES...J.Sfinchez-Dehesa 9. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT. PROJECT. TASK AREA & WORK UNIT NUMBERS Departamento de Fisica del Estado Solido 6.11.02A

  17. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  18. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, P.T.

    1985-03-05

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  19. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, Peter T.

    1985-01-01

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  20. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  1. Hopping conduction in polycrystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Sharma, R. P.; Shukla, A. K.; Kapoor, A. K.; Srivastava, R.; Mathur, P. C.

    1985-03-01

    Measurements of dc conductivity (sigma) on polycrystalline semiconductors, viz., InSb, Si, and CdTe, have been reported in the temperature range 77-300 K. The conduction mechanism near liquid-nitrogen temperature has been identified as the hopping of charge carriers from the charged trap centers to empty traps near the Fermi level.

  2. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  3. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  4. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  5. Silicon carbide, an emerging high temperature semiconductor

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.; Powell, J. Anthony

    1991-01-01

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  6. Semiconductor Nanowires: What's Next?

    SciTech Connect

    Yang, Peidong; Yan, Ruoxue; Fardy, Melissa

    2010-04-28

    In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.

  7. MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction

    NASA Astrophysics Data System (ADS)

    Sedlačková, Katarína; Šagátová, Andrea; Zat'ko, Bohumír; Nečas, Vladimír; Solar, Michael; Granja, Carlos

    2016-09-01

    Silicon Carbide (SiC) has been long recognized as a suitable semiconductor material for use in nuclear radiation detectors of high-energy charged particles, gamma rays, X-rays and neutrons. The nuclear interactions occurring in the semiconductor are complex and can be quantified using a Monte Carlo-based computer code. In this work, the MCNPX (Monte Carlo N-Particle eXtended) code was employed to support detector design and analysis. MCNPX is widely used to simulate interaction of radiation with matter and supports the transport of 34 particle types including heavy ions in broad energy ranges. The code also supports complex 3D geometries and both nuclear data tables and physics models. In our model, monoenergetic neutrons from D-T nuclear reaction were assumed as a source of fast neutrons. Their energy varied between 16 and 18.2 MeV, according to the accelerating voltage of the deuterons participating in D-T reaction. First, the simulations were used to calculate the optimum thickness of the reactive film composed of High Density PolyEthylene (HDPE), which converts neutral particles to charged particles and thusly enhancing detection efficiency. The dependency of the optimal thickness of the HDPE layer on the energy of the incident neutrons has been shown for the inspected energy range. Further, from the energy deposited by secondary charged particles and recoiled ions, the detector response was modeled and the effect of the conversion layer on detector response was demonstrated. The results from the simulations were compared with experimental data obtained for a detector covered by a 600 and 1300 μm thick conversion layer. Some limitations of the simulations using MCNPX code are also discussed.

  8. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  9. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  10. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

    2014-11-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

  11. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  12. Semiconductor Quantum Dots with Photoresponsive Ligands.

    PubMed

    Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

    2016-10-01

    Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

  13. Quality Control On Strained Semiconductor Devices

    SciTech Connect

    Dommann, Alex; Neels, Antonia

    2010-11-24

    New semiconductor devices are based very often on strained silicon which promises to squeeze more device performance out of current devices. With strained silicon it is possible to get the same device performance using less power. The technique is using strain as a 'design element' for silicon to improve the device performance and has become a hot topic in semiconductor research in the past years. However in the same time topics like 'System in Package'(SiP) on thin wafers are getting more and more important. The chips of thin wafers in advanced packaging are extremely sensitive to induced stresses due to packaging issues. If we are using now strain as a design element for improving device performance we increase the sensitivity again and therefore also the risk of aging of such SiP's. High Resolution X-ray diffraction (HRXRD) techniques such as Rocking Curves (RC's) and Reciprocal Space Mapping (RSM) are therefore very powerful tools to study the stresses in packaged devices.

  14. Thin films in silicon carbide semiconductor devices

    NASA Astrophysics Data System (ADS)

    Ostling, Mikael; Koo, Sang-Mo; Lee, Sang-Kwon; Zetterling, Carl-Mikael; Grishin, Alexander

    2004-12-01

    Silicon carbide (SiC) semiconductor devices have been established during the last decade as very useful high power, high speed and high temperature devices because of their inherent outstanding semiconductor materials properties. Due to its large band gap, SiC possesses a very high breakdown field and low intrinsic carrier concentration, which accordingly makes high voltage and high temperature operation possible. SiC is also suitable for high frequency device applications, because of the high saturation drift velocity and low permittivity. Thin film technology for various functions in the devices has been heavily researched. Suitable thin film technologies for Ohmic and low-resistive contact formation, passivation and new functionality utilizing ferroelectric materials have been developed. In ferroelectrics, the spontaneous polarization can be switched by an externally applied electric field, and thus are attractive for non-volatile memory and sensor applications. A novel integration of Junction-MOSFETs (JMOSFETs) and Nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is realized. SiC JMOSFET controls the drain current effectively from the buried junction gate thereby allowing for a constant current level at elevated temperatures. SiC NVFET has similar functions with non-volatile memory capability due to ferroelectric gate stack, which operated up to 300°C with memory function retained up to 200°C.

  15. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  16. Blue and UV Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Krukowski, S.; Skierbiszewski, C.; Perlin, P.; Leszczynski, M.; Bockowski, M.; Porowski, S.

    2006-04-01

    Despite many technological difficulties the group III nitrides: GaN, AlN and InN and their alloys are primary candidates for electro-optical coherent light sources. In the recent years the research and technology of the nitride based continuous wave (CW) laser diodes (LDs) led to creation of blue-violet coherent light sources of power up to 200 mW. The progress has been attained by using various ways to attack the main obstacles in the technology of these devices such as insufficient size of high quality lattice matched substrates, low p-doping efficiency of Mg acceptor, poor contact to p-type semiconductor and low efficiency of radiative recombination. The two different approaches were used to overcome the substrate problem: hetero-epitaxy and homoepitaxy. Homoepitaxy used high pressure GaN high quality crystals. Heteroepitaxy used sapphire, SiC or GaAs substrates and very sophisticated techniques of reduction of the dislocation density. The low p-doping efficiency by using Mg acceptor is related to creation of Mg--H complexes due to hydrogen presence during the growth of laser diode quantum structures. In addition, Mg acceptor has low efficiency due to its high energy. High Mg concentrations can be obtained by using either MOCVD or ammonia source MBE growth. An alternative route is to use hydrogen-free plasma activated MBE (PA-MBE) method. The recent advances and the prospects of both approaches will be discussed. Solid AlGaInN solution offers a possibility to cover wide spectral range, starting from near UV to blue, green and red. Arsenide based laser diodes (LDs) are efficient coherent red light sources. Therefore, nitride based LDs are considered to be devices of choice for green, blue and UV spectral range. So far only blue and violet laser has been realized. The progress toward green and UV lasers is far less spectacular. The results in all these areas and future prospects will be discussed.

  17. Infrared Semiconductor Metamaterials

    DTIC Science & Technology

    2016-09-01

    93106-2050 09/01/2016 Final Report DISTRIBUTION A: Distribution approved for public release. Air Force Research Laboratory AF Office Of Scientific...Because the light-matter interaction lengths are by definition subwavelength, and the quality factors modest (≈1−10), very large refractive...across an integer number (n) of resonators are easiest to simulate and shown for 3<n᝼. In each case a high quality uni-directional

  18. High Temperature Semiconductor Process

    NASA Technical Reports Server (NTRS)

    1998-01-01

    A sputtering deposition system capable of depositing large areas of high temperature superconducting materials was developed by CVC Products, Inc. with the support of the Jet Propulsion Laboratory SBIR (Small Business Innovative Research) program. The system was devleoped for NASA to produce high quality films of high temperature superconducting material for microwave communication system components. The system is also being used to deposit ferroelectric material for capacitors and the development of new electro-optical materials.2002103899

  19. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1986-01-01

    During the past half-year, the research effort centered on further investigating both the new superlattice photomultiplier with tunneling-assisted impact ionization and the photodetector based on the real space transfer mechanism. A brief outline of the current status of these projects is presented. Detailed analyses are included in Appendices A and B. New results of the tunneling-assisted impact ionization are presented.

  20. Nonlinear Dynamics in Semiconductors

    DTIC Science & Technology

    1989-06-30

    Division of Applied Sciences Harvard University Cambridge, MA 02138 ORGANIZATION: President and Fellows of Harvard College Office of Sponsored...Research Holyoke Center Harvard University Cambridge, MA 02138 DATE OF COMPLETION: 30 June 1999 FOR THE ATTENTION OF: Dr. Michael Shlesinger Office of Naval...Ph.D. in Physics, 1977, University of California at Berkeley A.M., Hon., 1986, Harvard University Employment 1986 to present Gordon McKay Professor of

  1. Back-side readout semiconductor photomultiplier

    DOEpatents

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  2. Semiconductor detectors in nuclear and particle physics

    SciTech Connect

    Rehak, P.; Gatti, E.

    1992-12-31

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported.

  3. A Thermal and Electrical Analysis of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Vafai, Kambiz

    1997-01-01

    The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

  4. Bacteria inside semiconductors as potential sensor elements: biochip progress.

    PubMed

    Sah, Vasu R; Baier, Robert E

    2014-06-24

    It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

  5. Tantalum-based semiconductors for solar water splitting.

    PubMed

    Zhang, Peng; Zhang, Jijie; Gong, Jinlong

    2014-07-07

    Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting

  6. Glass-clad semiconductor core optical fibers

    NASA Astrophysics Data System (ADS)

    Morris, Stephanie Lynn

    Glass-clad optical fibers comprising a crystalline semiconductor core have garnered considerable recent attention for their potential utility as novel waveguides for applications in nonlinear optics, sensing, power delivery, and biomedicine. As research into these fibers has progressed, it has become evident that excessive losses are limiting performance and so greater understanding of the underlying materials science, coupled with advances in fiber processing, is needed. More specifically, the semiconductor core fibers possess three performance-limiting characteristics that need to be addressed: (a) thermal expansion mismatches between crystalline core and glass cladding that lead to cracks, (b) the precipitation of oxide species in the core upon fiber cooling, which results from partial dissolution of the cladding glass by the core melt, and (c) polycrystallinity; all of which lead to scattering and increased transmission losses. This dissertation systematically studies each of these effects and develops both a fundamental scientific understanding of and practical engineering methods for reducing their impact. With respect to the thermal expansion mismatch and, in part, the dissolution of oxides, for the first time to our knowledge, oxide and non-oxide glass compositions are developed for a series of semiconductor cores based on two main design criteria: (1) matching the thermal expansion coefficient between semiconductor core and glass cladding to minimize cracking and (2) matching the viscosity-temperature dependences, such that the cladding glass draws into fiber at a temperature slightly above the melting point of the semiconductor in order to minimize dissolution and improve the fiber draw process. The x[Na 2O:Al2O3] + (100 - 2x)SiO2 glass compositional family was selected due to the ability to tailor the glass properties to match the aforementioned targets through slight variations in composition and adjusting the ratios of bridging and non-bridging oxygen

  7. Computer simulation of gamma-ray spectra from semiconductor detectors

    NASA Astrophysics Data System (ADS)

    Lund, Jim C.; Olschner, Fred; Shah, Kanai S.

    1992-12-01

    Traditionally, researchers developing improved gamma ray detectors have used analytical techniques or, rarely, computer simulations to predict the performance of new detectors. However, with the advent of inexpensive personal computers, it is now possible for virtually all detector researchers to perform some form of numerical computation to predict detector performance. Although general purpose code systems for semiconductor detector performance do not yet exist, it is possible to perform many useful calculations using commercially available, general purpose numerical software packages (such as `spreadsheet' programs intended for business use). With a knowledge of the rudimentary mechanics of detector simulation most researchers, including those with no programming skills, can effectively use numerical simulation methods to predict gamma ray detector performance. In this paper we discuss the details of the numerical simulation of gamma ray detectors with the hope of communicating the simplicity and effectiveness of these methods. In particular, we discuss the steps involved in simulating the pulse height spectrum produced by a semiconductor detector.

  8. Dimensional crossover in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-08-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5-10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies.

  9. Dimensional crossover in semiconductor nanostructures

    PubMed Central

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-01-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5–10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies. PMID:27577091

  10. Cameras for semiconductor process control

    NASA Technical Reports Server (NTRS)

    Porter, W. A.; Parker, D. L.

    1977-01-01

    The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.

  11. Semiconductor electrolyte photovoltaic energy converter

    NASA Technical Reports Server (NTRS)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  12. Squeezing of phonoritons in semiconductors

    NASA Astrophysics Data System (ADS)

    Huong, N. Q.; Hau, N. N.; Birman, J. L.

    2007-12-01

    If a semiconductor sample is illuminated by hight-intensity electro-magnetic radiation near the resonance, the occupation number of polaritons in the same mode is large and the interaction between polaritons and phonons become very important. This interaction leads to the formation of a new kind of elementary excitation called phonoriton, which actually is a coherent superposition of excitons, photons, and longitudinal acoustic phonons under Brillouin scattering of an intense polariton. The phonoritons have been studied theoretically and experimentally and have been found in Cu2O. In this work we discuss the squeezing of phonoritons inside semiconductors from a theoretical point of view. We found the squeezed states, or so called 'low-noise' states- the states of reduced quantum noise with reducing effect of vacuum fluctuation, for phonoritons. It shows that the phonoritons are intrinsically squeezed. From our results we also have the possibility to tune the squeeze amplitude, what is important both theoretically and experimentally.

  13. Semiconductor metafilms devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Brongersma, Mark L.

    2016-09-01

    Many conventional optoelectronic devices consist of thin, stacked films of metals and semiconductors. In this presentation, I will demonstrate how one can improve the performance of such devices by nano-structuring the constituent layers at length scales below the wavelength of light. The resulting metafilms and metasurfaces offer opportunities to dramatically modify the optical transmission, absorption, reflection, and refraction properties of device layers. This is accomplished by encoding the optical response of nanoscale resonant building blocks into the effective properties of the films and surfaces. To illustrate these points, I will show how nanopatterned metal and semiconductor layers may be used to enhance the performance of solar cells, photodetectors, and enable new imaging technologies. I will also demonstrate how the use of active nanoscale building blocks can facilitate the creation of active metafilm devices.

  14. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  15. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  16. Lasing in subwavelength semiconductor nanopatches

    NASA Astrophysics Data System (ADS)

    Lakhani, Amit M.; Yu, Kyoungsik; Wu, Ming C.

    2011-01-01

    Subwavelength semiconductor nanopatch lasers were analyzed, fabricated and characterized. Lasing was achieved in cylindrical and rectangular metallodielectric nanopatch geometries. The two smallest moderate quality factor modes of cylindrical cavities, the 'electric-' and 'magnetic-' dipole-like modes, successfully lased with physical volumes as small as 0.75 (λ0/n)3. Polarization control in nanopatch geometries is successfully demonstrated in anisotropic rectangular nanopatch structures.

  17. Cooling and mounting power semiconductors

    NASA Astrophysics Data System (ADS)

    Wetzel, P.

    1980-04-01

    The article examines the process of heat dissipation from power semiconductors. It is shown that for the relationship between temperature loading and dissipation it is possible to take an 'Ohm's law of heat abduction' to define the thermal impedance. The computation of the optimal size for a heatsink is demonstrated in detail. Discussion covers the types of heat dissipation such as heat radiation, heat conduction, and convection. Finally, some factors to consider during installation are examined.

  18. Semiconductor nanostructure properties. Molecular Dynamic Simulations

    NASA Astrophysics Data System (ADS)

    Podolska, N. I.; Zhmakin, A. I.

    2013-08-01

    The need for research is based on the fact that development of non-planar semiconductor nanosystems and nanomaterials with controlled properties is an important scientific and industrial problem. So, final scientific and technological problem is the creation of adequate modern methods and software for growth and properties simulation and optimization of various III-V (GaAs, InAs, InP, InGaAs etc.) nanostructures (e.g. nanowires) with controlled surface morphology, crystal structure, optical, transport properties etc. Accordingly, now we are developing a specialized computer code for atomistic simulation of structural (distribution of atoms and impurities, elastic and force constants, strain distribution etc.) and thermodynamic (mixing energy, interaction energy, surface energy etc.) properties of the nanostructures. Some simulation results are shown too.

  19. Photocatalytic Solar Fuel Generation on Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Feldmann, Jochen

    2015-03-01

    I will review our scientific work on photocatalytic solar fuel generation utilizing colloidal semiconductor nanocrystals decorated with catalytic metal clusters. In particular, nanocrystals made of CdS, TiO2 and organo-metal halide perovskites will be discussed. Key issues are the role of hole scavangers (M. Berr et al., Appl. Phys. Lett. 100, 223903 (2012)), the size and density of catalytic clusters (M. Berr et al.: Appl. Phys. Lett. 97, 093108 (2010) and Nano Letters 12, 5903 (2012) , and dependencies on external parameters such as pH (T. Simon et al., Nature Mat. 13, 1013 (2014)). Financially supported by the Bavarian Research Cluster ``Solar Technologies Go Hybrid: SolTech''.

  20. Rabi splitting enhancement in semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Dickerson, James Henry, II

    The physics of the two-level atom has been the basis of research in atomic physics for much of the past several decades. One of the great successes of semiconductor physics has been its capability to mimic the phenomena of other physical systems. Many of the discoveries in atomic physics have prompted studies of the coupling between two-level atom-like structures and photonic system in semiconductor physics. Much of that work has investigated the optics of the energy exchange between atom-like systems and the electromagnetic field mode of the enclosing cavity. Since many applications of microcavities are governed by the control of the spontaneous emission from the structure, command of the emission relies on control of the coupling between the photonic and the excitonic modes of the system. When the energies of the interacting microcavity states are in resonance, the resulting degeneracy yields an energy split between the coincident modes. This energy split produces two branches of the resonant mixed states, which are called polaritons. The energy separation between the mixed state branches is called the vacuum Rabi splitting, Delta. The magnitude of the Rabi splitting is indicative of the coupling strength of the polariton modes. One of the major pursuits of this field has been to augment the control of the coupling strength between the cavity polariton modes. Comprehensive control over the polariton states, be it the modulation of the polariton energies or the suppression of one of the modes, is a key component in the development of microcavity devices. The goal of my thesis research was to discover a simple means to achieve control over the coupling between the photonic and excitonic modes of a microcavity. This entailed the parametric tuning of the Rabi splitting between the coupled modes of the microcavity. Furthermore, we hoped to attain the maximum possible Rabi splitting observed in GaAs/AlxGa1- xAs microcavities with quantum oscillators located only within

  1. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  2. Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wei, Guohua; Czaplewski, David A.; Jung, Il Woong; Lenferink, Erik J.; Stanev, Teodor K.; Stern, Nathaniel P.

    Controlling the size of semiconductor nanostructures allows manipulation of the optical and electrical properties of band carriers. We show that laterally-confined monolayer MoS2 quantum dots can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor. Semiconductor-compatible nanofabrication processing allows for these low-dimensional materials to be integrated into complex systems that harness their controllable optical properties. Size-dependent exciton energy shifts and linewidths are observed, demonstrating the influence of quantum confinement. The patterned dots exhibit the same valley polarization characteristics as in a continuous MoS2 sheet, suggesting that monolayer semiconductor quantum dots could have potential for advancing quantum information applications. This work is supported by ISEN, the DOE-BES (DE-SC0012130), the NSF MRSEC program (DMR-1121262), and the Center for Nanoscale Materials, DOE-BES (DE-AC02-06CH11357). N.P.S. is an Alfred P. Sloan Research Fellow.

  3. A lead-halide perovskite molecular ferroelectric semiconductor.

    PubMed

    Liao, Wei-Qiang; Zhang, Yi; Hu, Chun-Li; Mao, Jiang-Gao; Ye, Heng-Yun; Li, Peng-Fei; Huang, Songping D; Xiong, Ren-Gen

    2015-05-29

    Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm(-2) and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics.

  4. A lead-halide perovskite molecular ferroelectric semiconductor

    PubMed Central

    Liao, Wei-Qiang; Zhang, Yi; Hu, Chun-Li; Mao, Jiang-Gao; Ye, Heng-Yun; Li, Peng-Fei; Huang, Songping D.; Xiong, Ren-Gen

    2015-01-01

    Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm−2 and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics. PMID:26021758

  5. Field-effect-modulated Seebeck coefficient in organic semiconductors.

    PubMed

    Pernstich, K P; Rössner, B; Batlogg, B

    2008-04-01

    Central to the operation of organic electronic and optoelectronic devices is the transport of charge and energy in the organic semiconductor, and to understand the nature and dynamics of charge carriers is at the focus of intense research efforts. As a basic transport property of solids, the Seebeck coefficient S provides deep insight as it is given by the entropy transported by thermally excited charge carriers and involves in the simplest case only electronic contributions where the transported entropy is determined by details of the band structure and scattering events. We have succeeded for the first time to measure the temperature- and carrier-density-dependent thermopower in single crystals and thin films of two prototypical organic semiconductors by a controlled modulation of the chemical potential in a field-effect geometry. Surprisingly, we find the Seebeck coefficient to be well within the range of the electronic contribution in conventional inorganic semiconductors, highlighting the similarity of transport mechanisms in organic and inorganic semiconductors. Charge and entropy transport is best described as band-like transport of quasiparticles that are subjected to scattering, with exponentially distributed in-gap trap states, and without further contributions to S.

  6. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-07

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  7. Semiconductor measurement technology: NIST list of publications, 1962-1989 (revised March 1990)

    NASA Astrophysics Data System (ADS)

    The list of publications contains reports of work performed at the National Institute of Standards and Technology (NIST) in the field of semiconductor measurement technology. Most of the publications resulted from work carried out as part of the NIST Semiconductor Technology Program (STP). The STP serves to focus NIST research on improved measurement technology for the use of the semiconductor device community in specifying materials, equipment, and devices in national and international commerce, and in monitoring and controlling device fabrication and assembly. The research leads to carefully evaluated, well-documented measurement methods, data, reference artifacts, models and theory, and associated technology which when applied by the industry are expected to contribute to higher yields, lower costs, and higher reliability of semiconductor devices and to provide a basis for controlled environments in fabrication processes and device performance.

  8. Two-dimensional hexagonal semiconductors beyond graphene

    NASA Astrophysics Data System (ADS)

    Nguyen, Bich Ha; Hieu Nguyen, Van

    2016-12-01

    The rapid and successful development of the research on graphene and graphene-based nanostructures has been substantially enlarged to include many other two-dimensional hexagonal semiconductors (THS): phosphorene, silicene, germanene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) such as MoS2, MoSe2, WS2, WSe2 as well as the van der Waals heterostructures of various THSs (including graphene). The present article is a review of recent works on THSs beyond graphene and van der Waals heterostructures composed of different pairs of all THSs. One among the priorities of new THSs compared to graphene is the presence of a non-vanishing energy bandgap which opened up the ability to fabricate a large number of electronic, optoelectronic and photonic devices on the basis of these new materials and their van der Waals heterostructures. Moreover, a significant progress in the research on TMDCs was the discovery of valley degree of freedom. The results of research on valley degree of freedom and the development of a new technology based on valley degree of freedom-valleytronics are also presented. Thus the scientific contents of the basic research and practical applications os THSs are very rich and extremely promising.

  9. Stretchable semiconductor elements and stretchable electrical circuits

    DOEpatents

    Rogers, John A.; Khang, Dahl-Young; Menard, Etienne

    2009-07-07

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  10. Surface Flashover of Semiconductors: A Fundamental Study

    DTIC Science & Technology

    1993-06-16

    mechanisms responsible for inducing surface flashover in semiconductors , par- ticularly silicon. In order to achieve this...of semiconductors . 2.9.2 Our Modelfor the Surface Flashover Mechanism We have developed a model in which the flashover initiation process occurs on...is described in detail in the following pages. 3-1 4. CUMULATIVE LIST OF PUBLICATIONS 1. "A Mechanism for Surface Flashover of Semiconductors ,"

  11. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  12. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  13. High performance compound semiconductor SPAD arrays

    NASA Astrophysics Data System (ADS)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  14. Cosmic Ray research in Armenia

    NASA Astrophysics Data System (ADS)

    Chilingarian, A.; Mirzoyan, R.; Zazyan, M.

    2009-11-01

    Cosmic Ray research on Mt. Aragats began in 1934 with the measurements of East-West anisotropy by the group from Leningrad Physics-Technical Institute and Norair Kocharian from Yerevan State University. Stimulated by the results of their experiments in 1942 Artem and Abraham Alikhanyan brothers organized a scientific expedition to Aragats. Since that time physicists were studying Cosmic Ray fluxes on Mt. Aragats with various particle detectors: mass spectrometers, calorimeters, transition radiation detectors, and huge particle detector arrays detecting protons and nuclei accelerated in most violent explosions in Galaxy. Latest activities at Mt. Aragats include Space Weather research with networks of particle detectors located in Armenia and abroad, and detectors of Space Education center in Yerevan.

  15. MM&T Program for the Establishment of Production Techniques for High Power Bulk Semiconductor Limiters.

    DTIC Science & Technology

    1979-07-01

    F. Jellison, ’"-Band, High Power Solid State Receiv6:. IProtector Employing a Bulk Semiconductor Limiter", 1979 IEEE, MTT-S- INTERNATIONAL , Orlando...Techniques for High-Power Bulk Semiconductor Limiters", First Quaterly Report for Contract DAAB07-76-C-0039, ECOM, U.S. Army Electronics Research and...Electronics Supply Ctr Palo Alto, CA 94304 Directorate of Engineering & Standardization Rockwell International ATTN: (DESC-ECS) Mr. N.A. Hauck Science

  16. Transient Transport in Binary and Ternary Semiconductors.

    DTIC Science & Technology

    1986-02-27

    transport; Semiconductors, Microelectronics, Quantum transport , Boltzmann transport, Drift and diffusion, Gallium arsende, Aluminum gallium arsenide, Indium gallium arsenide, and Transient transport.

  17. Reflection technique for thermal mapping of semiconductors

    DOEpatents

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  18. Toward a national semiconductor strategy, volume 1

    NASA Astrophysics Data System (ADS)

    1991-02-01

    Updated here are key market data showing trends in the U.S. semiconductor industry's world market position. New information is given on three emerging semiconductor-based technologies: broadband communications, advanced display systems, and intelligent vehicles and highways. These are examples of important, high-volume markets that will consume significant numbers of semiconductor components and that must be addressed in a national semiconductor strategy. New recommendations and a summary of all Committee recommendations to date are given as well as a summary of comments received at a public forum held in Silicon Valley in may 1990.

  19. Sensor Detects Semiconductor Escaping From Ampoule

    NASA Technical Reports Server (NTRS)

    Watring, Dale A.; Johnson, Martin L.

    1994-01-01

    Electrical resistance and temperature change upon exposure to semiconductors. Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Step increase in temperature and resistance of sensor indicates presence of hot GaAs. Sensor used to shut down furnace automatically if ampoule breaks and prevents further release of molton semiconductor, which could quickly breach surrounding thin wall of cartridge, damage furnace, and/or release toxic vapors into surrounding area.

  20. Semiconductor quantum dot toxicity in a mouse in vivo model

    NASA Astrophysics Data System (ADS)

    Bozrova, Svetlana V.; Baryshnikova, Maria A.; Nabiev, Igor; Sukhanova, Alyona

    2017-01-01

    Quantum dots (QDs) are increasingly widely used in clinical medicine. Their most promising potential applications are cancer diagnosis, including in vivo tumour imaging and targeted drug delivery. In this connection, the main questions are whether or not QDs are toxic for humans and, if they are, what concentration is relatively harmless. We have carried out in vivo experiments with CdSe/ZnS fluorescent semiconductor core/shell QDs, which are currently the most widely used in research.