Microelectronics used for Semiconductor Imaging Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heijne, Erik H. M.

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Collisional, radiative and total electron interaction in compound semiconductor detectors and solid state nuclear track detectors: effective atomic number and electron density.

PubMed

Kurudirek, Murat; Kurudirek, Sinem V

2015-05-01

Effective atomic numbers, Zeff and electron densities, Ne are widely used for characterization of interaction processes in radiation related studies. A variety of detectors are employed to detect different types of radiations i.e. photons and charged particles. In the present work, some compound semiconductor detectors (CSCD) and solid state nuclear track detectors (SSNTD) were investigated with respect to the partial as well as total electron interactions. Zeff and Ne of the given detectors were calculated for collisional, radiative and total electron interactions in the kinetic energy region 10keV-1GeV. Maximum values of Zeff and Ne were observed at higher kinetic energies of electrons. Significant variations in Zeff and Ne up to ≈20-25% were noticed for the detectors, GaN, ZnO, Amber and CR-39 for total electron interaction. Moreover, the obtained Zeff and Ne for electrons were compared to those obtained for photons in the entire energy region. Significant variations in Zeff were also noted not only for photons (up to ≈40% for GaN) but also between photons and electrons (up to ≈60% for CR-39) especially at lower energies. Except for the lower energies, Zeff and Ne keep more or less constant values for the given materials. The energy regions where Zeff and Ne keep constant clearly show the availability of using these parameters for characterization of the materials with respect to the radiation interaction processes. Copyright © 2015 Elsevier Ltd. All rights reserved.

Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

PubMed

Ha, Jang Ho; Kim, Han Soo

2013-11-01

The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

Study on Effects of Gamma-Ray Irradiation on TlBr Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Matsumura, Motohiro; Watanabe, Kenichi; Yamazaki, Atsushi; Uritani, Akira; Kimura, Norihisa; Nagano, Nobumichi; Hitomi, Keitaro

Radiation hardness of thallium bromide (TlBr) semiconductor detectors to 60Co gamma-ray irradiation was evaluated. The energy spectra and μτ products of electrons were measured to evaluate the irradiation effects. No significant degradation of spectroscopic performance of the TlBr detector for 137Cs gamma-rays was observed up to 45 kGy irradiation. Although the μτ products of electrons in the TlBr detector slightly decreased, position of the photo-peak was stable without significant degradation after the gamma-ray irradiation. We confirmed that the TlBr semiconductor detector has a high tolerance for gamma-ray irradiation at least up to 45 kGy.

Towards time-of-flight PET with a semiconductor detector.

PubMed

Ariño-Estrada, Gerard; Mitchell, Gregory S; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J; Shah, Kanai S; Cherry, Simon R

2018-02-16

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

Towards time-of-flight PET with a semiconductor detector

NASA Astrophysics Data System (ADS)

Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

2018-02-01

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

Photovoltaic radiation detector element

DOEpatents

Agouridis, Dimitrios C.

1983-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

Some results on radiation belt electrons from observations of satellite-borne semiconductor electron detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng Doug-yuan; Wu Ji-ping

1987-04-01

This paper presents some results from observations of a Chinese satellite-borne semiconductor electron detector. Data analysis yields typical values of electron fluxes in the central region of the inner radiation belt. The omnidirectional fluxes of electrons having energies greater than 0.5 MeV and 1.0 MeV are 1.9 x 10/sup 8/ and 6.7 x 10/sup 7/ elec./s-cm/sup 2/, respectively. The electron-flux profile on a typical orbit as a function of time is also given. In addition, the omnidirectional fluxes at the synchronous altitude for the two electron-energy levels mentioned are 2.43 x 10/sup 6/ and 4.25 x 10/sup 5/ elec./s-cm/sup 2/.more » The diurnal variations of electrons in the outer radiation belt observed at the synchronous altitude are also given. The results agree with those observed abroad.« less

Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging

PubMed Central

Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

2017-01-01

The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method. PMID:28553175

Use of GaN as a Scintillating Ionizing Radiation Detector

NASA Astrophysics Data System (ADS)

Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack

2017-09-01

Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.

Layered semiconductor neutron detectors

DOEpatents

Mao, Samuel S; Perry, Dale L

2013-12-10

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Development of a stable and sensitive semiconductor detector by using a mixture of lead(II) iodide and lead monoxide for NDT radiation dose detection

NASA Astrophysics Data System (ADS)

Heo, Y. J.; Kim, K. T.; Han, M. J.; Moon, C. W.; Kim, J. E.; Park, J. K.; Park, S. K.

2018-03-01

Recently, high-energy radiation has been widely used in various industrial fields, including the medical industry, and increasing research efforts have been devoted to the development of radiation detectors to be used with high-energy radiation. In particular, nondestructive industrial applications use high-energy radiation for ships and multilayered objects for accurate inspection. Therefore, it is crucial to verify the accuracy of radiation dose measurements and evaluate the precision and reproducibility of the radiation output dose. Representative detectors currently used for detecting the dose in high-energy regions include Si diodes, diamond diodes, and ionization chambers. However, the process of preparing these detectors is complex in addition to the processes of conducting dosimetric measurements, analysis, and evaluation. Furthermore, the minimum size that can be prepared for a detector is limited. In the present study, the disadvantages of original detectors are compensated by the development of a detector made of a mixture of polycrystalline PbI2 and PbO powder, which are both excellent semiconducting materials suitable for detecting high-energy gamma rays and X-rays. The proposed detector shows characteristics of excellent reproducibility and stable signal detection in response to the changes in energy, and was analyzed for its applicability. Moreover, the detector was prepared through a simple process of particle-in-binder to gain control over the thickness and meet the specific value designated by the user. A mixture mass ratio with the highest reproducibility was determined through reproducibility testing with respect to changes in the photon energy. The proposed detector was evaluated for its detection response characteristics with respect to high-energy photon beam, in terms of dose-rate dependence, sensitivity, and linearity evaluation. In the reproducibility assessment, the detector made with 15 wt% PbO powder showed the best characteristics of 0

Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.; Chen, Liang-Yu

2007-01-01

Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

PubMed Central

Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

2009-01-01

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roecker, Caleb Daniel; Schirato, Richard C.

2017-11-17

Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurredmore » was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.« less

Proximity charge sensing for semiconductor detectors

DOEpatents

Luke, Paul N; Tindall, Craig S; Amman, Mark

2013-10-08

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold

2014-11-17

The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated.more » Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.« less

Semiconductor neutron detector

DOEpatents

Ianakiev, Kiril D [Los Alamos, NM; Littlewood, Peter B [Cambridge, GB; Blagoev, Krastan B [Arlington, VA; Swinhoe, Martyn T [Los Alamos, NM; Smith, James L [Los Alamos, NM; Sullivan, Clair J [Los Alamos, NM; Alexandrov, Boian S [Los Alamos, NM; Lashley, Jason Charles [Santa Fe, NM

2011-03-08

A neutron detector has a compound of lithium in a single crystal form as a neutron sensor element. The lithium compound, containing improved charge transport properties, is either lithium niobate or lithium tantalate. The sensor element is in direct contact with a monitor that detects an electric current. A signal proportional to the electric current is produced and is calibrated to indicate the neutrons sensed. The neutron detector is particularly useful for detecting neutrons in a radiation environment. Such radiation environment may, e.g. include gamma radiation and noise.

Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples

DTIC Science & Technology

2015-11-13

P Wijewarnasuriya at the Army Research Lab to understand the bandd offsets of HgCdTe infrared detector structures. Especially when a sample is not...Final Report: Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples Report Title A used calibrated...structures i. G15-38 and G15-38 Quantum Dot ---------------------------- 16 Infrared Detector Samples ii. GSU13-MPD-GB1 Heterostructure

Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan S.; Patt, Bradley E.

Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector tomore » substantially maximize the ratio of the signal to the electronic noise.« less

Advanced Space Radiation Detector Technology Development

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

2013-01-01

The advanced space radiation detector development team at the NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

Advanced Space Radiation Detector Technology Development

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

2013-01-01

The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

Advanced Space Radiation Detector Technology Development

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

2013-01-01

The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

Semiconductor crystal high resolution imager

NASA Technical Reports Server (NTRS)

Matteson, James (Inventor); Levin, Craig S. (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

NASA Astrophysics Data System (ADS)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

Comparison of cosmic rays radiation detectors on-board commercial jet aircraft.

PubMed

Kubančák, Ján; Ambrožová, Iva; Brabcová, Kateřina Pachnerová; Jakůbek, Jan; Kyselová, Dagmar; Ploc, Ondřej; Bemš, Július; Štěpán, Václav; Uchihori, Yukio

2015-06-01

Aircrew members and passengers are exposed to increased rates of cosmic radiation on-board commercial jet aircraft. The annual effective doses of crew members often exceed limits for public, thus it is recommended to monitor them. In general, the doses are estimated via various computer codes and in some countries also verified by measurements. This paper describes a comparison of three cosmic rays detectors, namely of the (a) HAWK Tissue Equivalent Proportional Counter; (b) Liulin semiconductor energy deposit spectrometer and (c) TIMEPIX silicon semiconductor pixel detector, exposed to radiation fields on-board commercial Czech Airlines company jet aircraft. Measurements were performed during passenger flights from Prague to Madrid, Oslo, Tbilisi, Yekaterinburg and Almaty, and back in July and August 2011. For all flights, energy deposit spectra and absorbed doses are presented. Measured absorbed dose and dose equivalent are compared with the EPCARD code calculations. Finally, the advantages and disadvantages of all detectors are discussed. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Developing Si(Li) nuclear radiation detectors by pulsed electric field treatment

NASA Astrophysics Data System (ADS)

Muminov, R. A.; Radzhapov, S. A.; Saimbetov, A. K.

2009-08-01

Fabrication of Si(Li) nuclear radiation detectors using lithium ion drift under the action of a pulsed electric field is considered. Optimum treatment regime parameters are determined, including the pulse amplitude, duration, and repetition rate. Experimental data are presented, which show that the ion drift in a pulsed electric field decreases the semiconductor bulk compensation time by a factor of two to four and significantly increases the efficiency of detectors.

Semiconductor projectile impact detector

NASA Technical Reports Server (NTRS)

Shriver, E. L. (Inventor)

1977-01-01

A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

Low-Power Multi-Aspect Space Radiation Detector System

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave; Freeman, Jon C.; Burkebile, Stephen P.

2012-01-01

The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of all of these detector technologies will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the deep space radiation field.

Detection of fast neutrons from shielded nuclear materials using a semiconductor alpha detector.

PubMed

Pöllänen, R; Siiskonen, T

2014-08-01

The response of a semiconductor alpha detector to fast (>1 MeV) neutrons was investigated by using measurements and simulations. A polyethylene converter was placed in front of the detector to register recoil protons generated by elastic collisions between neutrons and hydrogen nuclei of the converter. The developed prototype equipment was tested with shielded radiation sources. The low background of the detector and insensitivity to high-energy gamma rays above 1 MeV are advantages when the detection of neutron-emitting nuclear materials is of importance. In the case of a (252)Cf neutron spectrum, the intrinsic efficiency of fast neutron detection was determined to be 2.5×10(-4), whereas three-fold greater efficiency was obtained for a (241)AmBe neutron spectrum. Copyright © 2014 Elsevier Ltd. All rights reserved.

Simulation and experimental measurement of radon activity using a multichannel silicon-based radiation detector.

PubMed

Ozdemir, F B; Selcuk, A B; Ozkorucuklu, S; Alpat, A B; Ozdemir, T; Ӧzek, N

2018-05-01

In this study, high-precision radiation detector (HIPRAD), a new-generation semiconductor microstrip detector, was used for detecting radon (Rn-222) activity. The aim of this study was to detect radon (Rn-222) activity experimentally by measuring the energy of particles in this detector. Count-ADC channel, eta-charge, and dose-response values were experimentally obtained using HIPRAD. The radon simulation in the radiation detector was theoretically performed using the Geant4 software package. The obtained radioactive decay, energy generation, energy values, and efficiency values of the simulation were plotted using the root program. The new-generation radiation detector proved to have 95% reliability according to the obtained dose-response graphs. The experimental and simulation results were found to be compatible with each other and with the radon decays and literature studies. Copyright © 2018 Elsevier Ltd. All rights reserved.

Pulse shaping system research of CdZnTe radiation detector for high energy x-ray diagnostic

NASA Astrophysics Data System (ADS)

Li, Miao; Zhao, Mingkun; Ding, Keyu; Zhou, Shousen; Zhou, Benjie

2018-02-01

As one of the typical wide band-gap semiconductor materials, the CdZnTe material has high detection efficiency and excellent energy resolution for the hard X-ray and the Gamma ray. The generated signal of the CdZnTe detector needs to be transformed to the pseudo-Gaussian pulse with a small impulse-width to remove noise and improve the energy resolution by the following nuclear spectrometry data acquisition system. In this paper, the multi-stage pseudo-Gaussian shaping-filter has been investigated based on the nuclear electronic principle. The optimized circuit parameters were also obtained based on the analysis of the characteristics of the pseudo-Gaussian shaping-filter in our following simulations. Based on the simulation results, the falling-time of the output pulse was decreased and faster response time can be obtained with decreasing shaping-time τs-k. And the undershoot was also removed when the ratio of input resistors was set to 1 to 2.5. Moreover, a two stage sallen-key Gaussian shaping-filter was designed and fabricated by using a low-noise voltage feedback operation amplifier LMH6628. A detection experiment platform had been built by using the precise pulse generator CAKE831 as the imitated radiation pulse which was equivalent signal of the semiconductor CdZnTe detector. Experiment results show that the output pulse of the two stage pseudo-Gaussian shaping filter has minimum 200ns pulse width (FWHM), and the output pulse of each stage was well consistent with the simulation results. Based on the performance in our experiment, this multi-stage pseudo-Gaussian shaping-filter can reduce the event-lost caused by pile-up in the CdZnTe semiconductor detector and improve the energy resolution effectively.

Charge carrier transport properties in thallium bromide crystalls used as radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olschner, F.; Toledo-Quinones, M.; Shah, K.S.

1990-06-01

Thallium bromide (TlBr) is an attractive material for use in radiation detectors because of its wide bandgap (2.68 eV) and very high atomic number. Usefulness as a semiconductor detector material, however, also requires good charge carrier transport properties in order to maximize the magnitude of the signal from the detector. The authors report on measurements of the two most important transport parameters; the mobility {mu} and the mean trapping time {tau} for electrons and holes in TlBr crystals prepared in the laboratory.

Directional radiation detectors

DOEpatents

Dowell, Jonathan L.

2017-09-12

Directional radiation detectors and systems, methods, and computer-readable media for using directional radiation detectors to locate a radiation source are provided herein. A directional radiation detector includes a radiation sensor. A radiation attenuator partially surrounds the radiation sensor and defines an aperture through which incident radiation is received by the radiation sensor. The aperture is positioned such that when incident radiation is received directly through the aperture and by the radiation sensor, a source of the incident radiation is located within a solid angle defined by the aperture. The radiation sensor senses at least one of alpha particles, beta particles, gamma particles, or neutrons.

Semiconductor P-I-N detector

DOEpatents

Sudharsanan, Rengarajan; Karam, Nasser H.

2001-01-01

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Adaptors for radiation detectors

DOEpatents

Livesay, Ronald Jason

2014-04-22

Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

Adaptors for radiation detectors

DOEpatents

Livesay, Ronald Jason

2015-07-28

Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

Study of defects in TlBr, InI as potential semiconductor radiation detectors

NASA Astrophysics Data System (ADS)

Biswas, Koushik; Du, Mao-Hua

2011-03-01

Group III-halides such as TlBr and InI are receiving considerable attention for application in room temperature radiation detector devices. It is however, essential that these detector materials have favorable defect properties which enable good carrier transport when operating under an external bias voltage. We have studied the properties of native defects of InI and Tlbr and several important results emerge: (1) Schottky defects are the dominant low-energy defects in both materials that can potentially pin the Fermi level close to midgap, leading to high resistivity; (2) native defects in TlBr are benign in terms of electron trapping. However, anion-vacancy in InI induces a deep electron trap similar to the F -centers in alkali halides. This can reduce electron mobility-lifetime product in InI; (3) low diffusion barriers of vacancies and ionic conductivity could be responsible for the observed polarization phenomenon in both materials at room temperature. U.S. DOE Office of Nonproliferation Research and Development NA22.

Calibration of modified Liulin detector for cosmic radiation measurements on-board aircraft.

PubMed

Kyselová, D; Ambrožová, I; Krist, P; Kubančák, J; Uchihori, Y; Kitamura, H; Ploc, O

2015-06-01

The annual effective doses of aircrew members often exceed the limit of 1 mSv for the public due to the increased level of cosmic radiation at the flight altitudes, and thus, it is recommended to monitor them. Aircrew dosimetry is usually performed using special computer programs mostly based on results of Monte Carlo simulations. Contemporary, detectors are used mostly for validation of these computer codes, verification of effective dose calculations and for research purposes. One of such detectors is active silicon semiconductor deposited energy spectrometer Liulin. Output quantities of measurement with the Liulin detector are the absorbed dose in silicon D and the ambient dose equivalent H*(10); to determine it, two calibrations are necessary. The purpose of this work was to develop a calibration methodology that can be used to convert signal from the detector to D independently on calibration performed at Heavy Ion Medical Accelerator facility in Chiba, Japan. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Photocapacitive MIS infrared detectors

NASA Technical Reports Server (NTRS)

Sher, A.; Lu, S. S.-M.; Moriarty, J. A.; Crouch, R. K.; Miller, W. E.

1978-01-01

A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.

Gamma ray detector modules

NASA Technical Reports Server (NTRS)

Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

2009-01-01

A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

Studying radiation hardness of a cadmium tungstate crystal based radiation detector

NASA Astrophysics Data System (ADS)

Shtein, M. M.; Smekalin, L. F.; Stepanov, S. A.; Zatonov, I. A.; Tkacheva, T. V.; Usachev, E. Yu

2016-06-01

The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector based on cadmium tungstate crystal and its structural components individually. The article describes a layout of an experimental facility that was used for measurements of radiation hardness. The radiation dose dependence of the photodiode current is presented, when it is excited by a light flux of a scintillator or by an external light source. Experiments were carried out to estimate radiation hardness of two types of optical glue used in detector production; they are based on silicon rubber and epoxy. With the help of a spectrophotometer and cobalt gun, each of the glue samples was measured for a relative light transmission factor with different wavelengths, depending on the radiation dose. The obtained data are presented in a comprehensive analysis of the results. It was determined, which of the glue samples is most suitable for production of detectors working under exposure to strong radiation.

Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

NASA Astrophysics Data System (ADS)

Kudrin, A. V.; Dorokhin, M. V.; Zdoroveishchev, A. V.; Demina, P. B.; Vikhrova, O. V.; Kalent'eva, I. L.; Ved', M. V.

2017-11-01

A photoconductive detector of circularly polarized radiation based on the metal-insulator-semiconductor structure of CoPt/(Al2O3/SiO2/Al2O3)/InGaAs/GaAs is created. The efficiency of detection of circularly polarized radiation is 0.75% at room temperature. The operation of the detector is based on the manifestation of the effect of magnetic circular dichroism in the CoPt layer, that is, the dependence of the CoPt transmission coefficient on the sign of the circular polarization of light and magnetization.

Detectors for Particle Radiation

NASA Astrophysics Data System (ADS)

Kleinknecht, Konrad

1999-01-01

This textbook provides a clear, concise and comprehensive review of the physical principles behind the devices used to detect charged particles and gamma rays, and the construction and performance of these many different types of detectors. Detectors for high-energy particles and radiation are used in many areas of science, especially particle physics and nuclear physics experiments, nuclear medicine, cosmic ray measurements, space sciences and geological exploration. This second edition includes all the latest developments in detector technology, including several new chapters covering micro-strip gas chambers, silicion strip detectors and CCDs, scintillating fibers, shower detectors using noble liquid gases, and compensating calorimeters for hadronic showers. This well-illustrated textbook contains examples from the many areas in science in which these detectors are used. It provides both a coursebook for students in physics, and a useful introduction for researchers in other fields.

Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

NASA Technical Reports Server (NTRS)

Wagner, L. J.

1977-01-01

The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

High-resolution ionization detector and array of such detectors

DOEpatents

McGregor, Douglas S [Ypsilanti, MI; Rojeski, Ronald A [Pleasanton, CA

2001-01-16

A high-resolution ionization detector and an array of such detectors are described which utilize a reference pattern of conductive or semiconductive material to form interaction, pervious and measurement regions in an ionization substrate of, for example, CdZnTe material. The ionization detector is a room temperature semiconductor radiation detector. Various geometries of such a detector and an array of such detectors produce room temperature operated gamma ray spectrometers with relatively high resolution. For example, a 1 cm.sup.3 detector is capable of measuring .sup.137 Cs 662 keV gamma rays with room temperature energy resolution approaching 2% at FWHM. Two major types of such detectors include a parallel strip semiconductor Frisch grid detector and the geometrically weighted trapezoid prism semiconductor Frisch grid detector. The geometrically weighted detector records room temperature (24.degree. C.) energy resolutions of 2.68% FWHM for .sup.137 Cs 662 keV gamma rays and 2.45% FWHM for .sup.60 Co 1.332 MeV gamma rays. The detectors perform well without any electronic pulse rejection, correction or compensation techniques. The devices operate at room temperature with simple commercially available NIM bin electronics and do not require special preamplifiers or cooling stages for good spectroscopic results.

GaSe and GaTe anisotropic layered semiconductors for radiation detectors

NASA Astrophysics Data System (ADS)

Mandal, Krishna C.; Choi, Michael; Kang, Sung Hoon; Rauh, R. David; Wei, Jiuan; Zhang, Hui; Zheng, Lili; Cui, Y.; Groza, M.; Burger, A.

2007-09-01

High quality detector grade GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). A state-of-the-art computer model, MASTRAPP, is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown crystals. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The crystals harvested from ingots of 8-10 cm length and 2.5 cm diameter, have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, low temperature photoluminescence (PL), atomic force microscopy (AFM), and optical absorption/transmission measurements. Single element devices up to 1 cm2 in area have been fabricated from the crystals and tested as radiation detectors by measuring current-voltage (I-V) characteristics and pulse height spectra using 241Am source. The crystals have shown high promise as nuclear detectors with their high dark resistivity (>=10 9 Ω .cm), good charge transport properties (μτ e ~ 1.4x10 -5 cm2/V and μτ h ~ 1.5x10 -5 cm2/V), and relatively good energy resolution (~4% energy resolution at 60 keV). Details of numerical modeling and simulation, detector fabrication, and testing using a 241Am energy source (60 keV) is presented in this paper.

RADIATION DETECTOR

DOEpatents

Wilson, H.N.; Glass, F.M.

1960-05-10

A radiation detector of the type is described wherein a condenser is directly connected to the electrodes for the purpose of performing the dual function of a guard ring and to provide capacitance coupling for resetting the detector system.

RADIATION WAVE DETECTOR

DOEpatents

Wouters, L.F.

1958-10-28

The detection of the shape and amplitude of a radiation wave is discussed, particularly an apparatus for automatically indicating at spaced lntervals of time the radiation intensity at a flxed point as a measure of a radiation wave passing the point. The apparatus utilizes a number of photomultiplier tubes surrounding a scintillation type detector, For obtainlng time spaced signals proportional to radiation at predetermined intervals the photolnultiplier tubes are actuated ln sequence following detector incidence of a predetermined radiation level by electronic means. The time spaced signals so produced are then separately amplified and relayed to recording means.

Review on the characteristics of radiation detectors for dosimetry and imaging

NASA Astrophysics Data System (ADS)

Seco, Joao; Clasie, Ben; Partridge, Mike

2014-10-01

The enormous advances in the understanding of human anatomy, physiology and pathology in recent decades have led to ever-improving methods of disease prevention, diagnosis and treatment. Many of these achievements have been enabled, at least in part, by advances in ionizing radiation detectors. Radiology has been transformed by the implementation of multi-slice CT and digital x-ray imaging systems, with silver halide films now largely obsolete for many applications. Nuclear medicine has benefited from more sensitive, faster and higher-resolution detectors delivering ever-higher SPECT and PET image quality. PET/MR systems have been enabled by the development of gamma ray detectors that can operate in high magnetic fields. These huge advances in imaging have enabled equally impressive steps forward in radiotherapy delivery accuracy, with 4DCT, PET and MRI routinely used in treatment planning and online image guidance provided by cone-beam CT. The challenge of ensuring safe, accurate and precise delivery of highly complex radiation fields has also both driven and benefited from advances in radiation detectors. Detector systems have been developed for the measurement of electron, intensity-modulated and modulated arc x-ray, proton and ion beams, and around brachytherapy sources based on a very wide range of technologies. The types of measurement performed are equally wide, encompassing commissioning and quality assurance, reference dosimetry, in vivo dosimetry and personal and environmental monitoring. In this article, we briefly introduce the general physical characteristics and properties that are commonly used to describe the behaviour and performance of both discrete and imaging detectors. The physical principles of operation of calorimeters; ionization and charge detectors; semiconductor, luminescent, scintillating and chemical detectors; and radiochromic and radiographic films are then reviewed and their principle applications discussed. Finally, a general

Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

DOEpatents

McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.

2010-12-21

Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

NASA Astrophysics Data System (ADS)

Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

1997-01-01

For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction.

PubMed

Jeon, Youngeun; Jung, Sungchul; Jin, Hanbyul; Mo, Kyuhyung; Kim, Kyung Rok; Park, Wook-Ki; Han, Seong-Tae; Park, Kibog

2017-12-04

Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films. The voltage response of the EMSM THz detector shows the clear dependence on the polarization angle of incident THz wave and the responsivity is found to be very high (~2,169 V/W) at 0.4 THz without any antenna and signal amplifier. The EMSM junction structure can be a new and efficient way of fabricating the nonlinear device THz detector with high cut-off frequency relying on extremely small junction area.

Solid state neutron detector array

DOEpatents

Seidel, J.G.; Ruddy, F.H.; Brandt, C.D.; Dulloo, A.R.; Lott, R.G.; Sirianni, E.; Wilson, R.O.

1999-08-17

A neutron detector array is capable of measuring a wide range of neutron fluxes. The array includes multiple semiconductor neutron detectors. Each detector has a semiconductor active region that is resistant to radiation damage. In one embodiment, the array preferably has a relatively small size, making it possible to place the array in confined locations. The ability of the array to detect a wide range of neutron fluxes is highly advantageous for many applications such as detecting neutron flux during start up, ramp up and full power of nuclear reactors. 7 figs.

Solid state neutron detector array

DOEpatents

Seidel, John G.; Ruddy, Frank H.; Brandt, Charles D.; Dulloo, Abdul R.; Lott, Randy G.; Sirianni, Ernest; Wilson, Randall O.

1999-01-01

A neutron detector array is capable of measuring a wide range of neutron fluxes. The array includes multiple semiconductor neutron detectors. Each detector has a semiconductor active region that is resistant to radiation damage. In one embodiment, the array preferably has a relatively small size, making it possible to place the array in confined locations. The ability of the array to detect a wide range of neutron fluxes is highly advantageous for many applications such as detecting neutron flux during start up, ramp up and full power of nuclear reactors.

Entangled γ-photons—classical laboratory exercise with modern detectors

NASA Astrophysics Data System (ADS)

Hetfleiš, Jakub; Lněnička, Jindřich; Šlégr, Jan

2018-03-01

This paper describes the application of modern semiconductor detectors of γ and β radiation, which can be used in undergraduate laboratory experiments and lecture demonstrations as a replacement for Geiger-Müller (GM) tubes. Unlike GM tubes, semiconductor detectors do not require a high voltage power source or shaping circuits. The principle of operation of semiconductor detectors is discussed briefly, and classical experiments from nuclear physics are described, ranging from the measurements of linear and mass attenuation coefficient to a demonstration of entangled γ-photons.

Radiation response issues for infrared detectors

NASA Technical Reports Server (NTRS)

Kalma, Arne H.

1990-01-01

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Underwater radiation detector

DOEpatents

Kruse, Lyle W.; McKnight, Richard P.

1986-01-01

A detector apparatus for differentiating between gamma and neutron radiation is provided. The detector includes a pair of differentially shielded Geiger-Mueller tubes. The first tube is wrapped in silver foil and the second tube is wrapped in lead foil. Both the silver and lead foils allow the passage of gamma rays at a constant rate in a gamma ray only field. When neutrons are present, however, the silver activates and emits beta radiation that is also detected by the silver wrapped Geiger-Mueller tube while the radiation detected by the lead wrapped Geiger-Mueller tube remains constant. The amount of radiation impinging on the separate Geiger-Mueller tubes is then correlated in order to distinguish between the neutron and gamma radiations.

Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

NASA Technical Reports Server (NTRS)

Barry, Mamadou Y.

1999-01-01

The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

System to quantify gamma-ray radial energy deposition in semiconductor detectors

DOEpatents

Kammeraad, Judith E.; Blair, Jerome J.

2001-01-01

A system for measuring gamma-ray radial energy deposition is provided for use in conjunction with a semiconductor detector. The detector comprises two electrodes and a detector material, and defines a plurality of zones within the detecting material in parallel with the two electrodes. The detector produces a charge signal E(t) when a gamma-ray interacts with the detector. Digitizing means are provided for converting the charge signal E(t) into a digitized signal. A computational means receives the digitized signal and calculates in which of the plurality of zones the gamma-ray deposited energy when interacting with the detector. The computational means produces an output indicating the amount of energy deposited by the gamma-ray in each of the plurality of zones.

Surface Conduction in III-V Semiconductor Infrared Detector Materials

NASA Astrophysics Data System (ADS)

Sidor, Daniel Evan

III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are ineffectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture offers a potential solution. III-V bulk unipolar barrier detectors that effectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated.

Mossbauer spectrometer radiation detector

NASA Technical Reports Server (NTRS)

Singh, J. J. (Inventor)

1973-01-01

A Mossbauer spectrometer with high efficiencies in both transmission and backscattering techniques is described. The device contains a sodium iodide crystal for detecting radiation caused by the Mossbauer effect, and two photomultipliers to collect the radiation detected by the crystal. When used in the transmission technique, the sample or scatterer is placed between the incident radiation source and the detector. When used in a backscattering technique, the detector is placed between the incident radiation source and the sample of scatterer such that the incident radiation will pass through a hole in the crystal and strike the sample. Diagrams of the instrument are provided.

49 CFR 173.310 - Exceptions for radiation detectors.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 2 2012-10-01 2012-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are excepted...

49 CFR 173.310 - Exceptions for radiation detectors.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 2 2013-10-01 2013-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are excepted...

49 CFR 173.310 - Exceptions for radiation detectors.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 2 2014-10-01 2014-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are excepted...

Ionizing radiation detector

DOEpatents

Thacker, Louis H.

1990-01-01

An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

Cosmic radiation dose in aircraft--a neutron track etch detector.

PubMed

Vuković, B; Radolić, V; Miklavcić, I; Poje, M; Varga, M; Planinić, J

2007-01-01

Cosmic radiation bombards us at high altitude by ionizing particles. The radiation environment is a complex mixture of charged particles of solar and galactic origin, as well as of secondary particles produced in interaction of the galactic cosmic particles with the nuclei of atmosphere of the Earth. The radiation field at aircraft altitude consists of different types of particles, mainly photons, electrons, positrons and neutrons, with a large energy range. The non-neutron component of cosmic radiation dose aboard ATR 42 and A 320 aircrafts (flight level of 8 and 11 km, respectively) was measured with TLD-100 (LiF:Mg,Ti) detectors and the Mini 6100 semiconductor dosimeter. The estimated occupational effective dose for the aircraft crew (A 320) working 500 h per year was 1.64 mSv. Other experiments, or dose rate measurements with the neutron dosimeter, consisting of LR-115 track detector and boron foil BN-1 or 10B converter, were performed on five intercontinental flights. Comparison of the dose rates of the non-neutron component (low LET) and the neutron one (high LET) of the radiation field at the aircraft flight level showed that the neutron component carried about 50% of the total dose. The dose rate measurements on the flights from the Middle Europe to the South and Middle America, then to Korea and Japan, showed that the flights over or near the equator region carried less dose rate; this was in accordance with the known geomagnetic latitude effect.

Radiation hardness studies of CdTe thin films for clinical high-energy photon beam detectors

NASA Astrophysics Data System (ADS)

Shvydka, Diana; Parsai, E. I.; Kang, J.

2008-02-01

In radiation oncology applications, the need for higher-quality images has been driven by recent advances in radiation delivery systems that require online imaging. The existing electronic imaging devices commonly used to acquire portal images implement amorphous silicon (a-Si) detector, which exhibits poor image quality. Efforts for improvement have mostly been in the areas of noise and scatter reduction through software. This has not been successful due to inherent shortcomings of a-Si material. Cadmium telluride (CdTe) semiconductor has long been recognized as highly suitable for use in X-ray detectors in both spectroscopic and imaging applications. Development of such systems has mostly concentrated on single crystal CdTe. Recent advances in thin-film deposition technology suggest replacement of crystalline material with its polycrystalline counterpart, offering ease of large-area device fabrication and achievement of higher resolution as well as a favorable cost difference. While bulk CdTe material was found to have superior radiation hardness, thin films have not been evaluated from that prospective, in particular under high-energy photon beam typical of radiation treatment applications. We assess the performance of thin-film CdTe devices utilizing 6 MeV photon beam and find no consistent trend for material degradation under doses far exceeding the typical radiation therapy detector lifetime dose.

SiC detectors to monitor ionizing radiations emitted from nuclear events and plasmas

NASA Astrophysics Data System (ADS)

Torrisi, L.; Cannavò, A.

2016-09-01

Silicon Carbide (SiC) semiconductor detectors are increasingly employed in Nuclear Physics for their advantages with respect to traditional silicon (Si). Such detectors show an energy resolution, charge mobility, response velocity and detection efficiency similar to Si detectors. However, the higher band gap (3.26 eV), the lower leakage current (∼10 pA) maintained also at room temperature, the higher radiation hardness and the higher density with respect to Si represent some indisputable advantages characterizing such detectors. The devices can be employed at high temperatures, at high absorbed doses and in the case of high visible light intensities, for example, in plasma, for limited exposition times without damage. Generally SiC Schottky diodes are employed in reverse polarization with an active region depth of the order of 100 µm, purity below 1014 cm-3 and an active area lower than 1 cm2. Measurements in the regime of proportionality with the radiation energy released in the active region and measurements in time-of-flight configuration are employed for nuclear emission events produced at both low and high fluences. Alpha spectra demonstrated an energy resolution of about 1.3% at 5.8 MeV. Radiation emission from laser-generated plasma can be monitored in terms of detected photons, electrons and ions, using the laser pulse as a start signal and the radiation detection as a stop signal, enabling to measure the ion velocity by knowing the target-detector flight distance. SiC spectra acquired in the Messina University laboratories using radioactive ion sources and at the PALS laboratory facility in Prague (Czech Republic) are presented. A preliminary study of the use of SiC detectors, embedded in a water equivalent polymer, as a dosimeter is presented and discussed.

Semiconductor radiation detector with internal gain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

Advances in TlBr detector development

NASA Astrophysics Data System (ADS)

Hitomi, Keitaro; Shoji, Tadayoshi; Ishii, Keizo

2013-09-01

Thallium bromide (TlBr) is a promising compound semiconductor for fabrication of gamma-ray detectors. The attractive physical properties of TlBr lie in its high photon stopping power, high resistivity and good charge transport properties. Gamma-ray detectors fabricated from TlBr crystals have exhibited excellent spectroscopic performance. In this paper, advances in TlBr radiation detector development are reviewed with emphasis on crystal growth, detector fabrication, physical properties and detector performance.

Amorphous silicon radiation detectors

DOEpatents

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

New Technology CZT Detectors for High-Energy Flare Spectroscopy: The Room Temperature Semiconductor Spectrometer for JAWSAT

NASA Technical Reports Server (NTRS)

Vestrand, W. Thomas

1999-01-01

The goal of our Room Temperature Semiconductor Spectrometer (RTeSS) project is to develop a small high-energy solar flare spectrometer employing semiconductor detectors that do not require significant cooling when used as high-energy solar flare spectrometers. Specifically, the goal is to test Cadmium Zinc Telluride (CZT) detectors with coplanar grid electrodes as x-ray and gamma-ray spectrometers and to design an experiment that can be flown as a "piggy-back" payload on a satellite mission during the next solar maximum.

Low dose radiation damage effects in silicon strip detectors

NASA Astrophysics Data System (ADS)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Segmented AC-coupled readout from continuous collection electrodes in semiconductor sensors

DOEpatents

Sadrozinski, Hartmut F. W.; Seiden, Abraham; Cartiglia, Nicolo

2017-04-04

Position sensitive radiation detection is provided using a continuous electrode in a semiconductor radiation detector, as opposed to the conventional use of a segmented electrode. Time constants relating to AC coupling between the continuous electrode and segmented contacts to the electrode are selected to provide position resolution from the resulting configurations. The resulting detectors advantageously have a more uniform electric field than conventional detectors having segmented electrodes, and are expected to have much lower cost of production and of integration with readout electronics.

49 CFR 173.310 - Exceptions for radiation detectors.

Code of Federal Regulations, 2010 CFR

2010-10-01

...-GENERAL REQUIREMENTS FOR SHIPMENTS AND PACKAGINGS Gases; Preparation and Packaging § 173.310 Exceptions for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are excepted...

49 CFR 173.310 - Exceptions for radiation detectors.

Code of Federal Regulations, 2011 CFR

2011-10-01

...-GENERAL REQUIREMENTS FOR SHIPMENTS AND PACKAGINGS Gases; Preparation and Packaging § 173.310 Exceptions for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are excepted...

Development of neutron/gamma generators and a polymer semiconductor detector for homeland security applications

NASA Astrophysics Data System (ADS)

King, Michael Joseph

Instrumentation development is essential to the advancement and success of homeland security systems. Active interrogation techniques that scan luggage and cargo containers for shielded special nuclear materials or explosives hold great potential in halting further terrorist attacks. The development of more economical, compact and efficient source and radiation detection devices will facilitate scanning of all containers and luggage while maintaining high-throughput and low-false alarms Innovative ion sources were developed for two novel, specialized neutron generating devices and initial generator tests were performed. In addition, a low-energy acceleration gamma generator was developed and its performance characterized. Finally, an organic semiconductor was investigated for direct fast neutron detection. A main part of the thesis work was the development of ion sources, crucial components of the neutron/gamma generator development. The use of an externally-driven radio-frequency antenna allows the ion source to generate high beam currents with high, mono-atomic species fractions while maintaining low operating pressures, advantageous parameters for neutron generators. A dual "S" shaped induction antenna was developed to satisfy the high current and large extraction area requirements of the high-intensity neutron generator. The dual antenna arrangement generated a suitable current density of 28 mA/cm2 at practical RF power levels. The stringent requirements of the Pulsed Fast Neutron Transmission Spectroscopy neutron generator necessitated the development of a specialized ten window ion source of toroidal shape with a narrow neutron production target at its center. An innovative ten antenna arrangement with parallel capacitors was developed for driving the multi-antenna arrangement and uniform coupling of RF power to all ten antennas was achieved. To address the desire for low-impact, low-radiation dose active interrogation systems, research was performed on mono

Ultra-thin plasma radiation detector

DOEpatents

Friedman, Peter S.

2017-01-24

A position-sensitive ionizing-radiation counting detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

Amorphous silicon radiation detectors

DOEpatents

Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

1992-11-17

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: application to pulse-height spectroscopy in a-Se.

PubMed

Fang, Yuan; Badal, Andreu; Allec, Nicholas; Karim, Karim S; Badano, Aldo

2012-01-01

The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

Tin Can Radiation Detector.

ERIC Educational Resources Information Center

Crull, John L.

1986-01-01

Provides instructions for making tin can radiation detectors from empty aluminum cans, aluminum foil, clear plastic, copper wire, silica gel, and fine, unwaxed dental floss put together with tape or glue. Also provides suggestions for activities using the detectors. (JN)

Organic Scintillation Detectors for Spectroscopic Radiation Portal Monitors

NASA Astrophysics Data System (ADS)

Paff, Marc Gerrit

Thousands of radiation portal monitors have been deployed worldwide to detect and deter the smuggling of nuclear and radiological materials that could be used in nefarious acts. Radiation portal monitors are often installed at bottlenecks where large amounts of people or goods must traverse. Examples of use include scanning cargo containers at shipping ports, vehicles at border crossings, and people at high profile functions and events. Traditional radiation portal monitors contain separate detectors for passively measuring neutron and gamma ray count rates. 3He tubes embedded in polyethylene and slabs of plastic scintillators are the most common detector materials used in radiation portal monitors. The radiation portal monitor alarm mechanism relies on measuring radiation count rates above user defined alarm thresholds. These alarm thresholds are set above natural background count rates. Minimizing false alarms caused by natural background and maximizing sensitivity to weakly emitting threat sources must be balanced when setting these alarm thresholds. Current radiation portal monitor designs suffer from frequent nuisance radiation alarms. These radiation nuisance alarms are most frequently caused by shipments of large quantities of naturally occurring radioactive material containing cargo, like kitty litter, as well as by humans who have recently undergone a nuclear medicine procedure, particularly 99mTc treatments. Current radiation portal monitors typically lack spectroscopic capabilities, so nuisance alarms must be screened out in time-intensive secondary inspections with handheld radiation detectors. Radiation portal monitors using organic liquid scintillation detectors were designed, built, and tested. A number of algorithms were developed to perform on-the-fly radionuclide identification of single and combination radiation sources moving past the portal monitor at speeds up to 2.2 m/s. The portal monitor designs were tested extensively with a variety of

[Radioactive cesium analysis in radiation-tainted beef by gamma-ray spectrometry with germanium semiconductor detector].

PubMed

Minatani, Tomiaki; Nagai, Hiroyuki; Nakamura, Masashi; Otsuka, Kimihito; Sakai, Yoshimichi

2012-01-01

The detection limit and precision of radioactive cesium measurement in beef by gamma-ray spectrometry with a germanium semiconductor detector were evaluated. Measurement for 2,000 seconds using a U-8 container (100 mL) provided a detection limit of radioactive cesium (the sum of 134Cs and 137Cs) of around 20 Bq/kg. The 99% confidence interval of the measurement of provisional maximum residue limit level (491 Bq/kg) samples ranged from 447 to 535 Bq/kg. Beef is heterogeneous, containing muscle and complex fat layers. Depending on the sampled parts, the measurement value is variable. It was found that radioactive cesium content of the muscle layer was clearly different from that of fat, and slight differences were observed among parts of the sample (SD=16.9 Bq/kg), even though the same region (neck block) of beef sample was analyzed.

Cross-Talk Limits of Highly Segmented Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Pullia, Alberto; Weisshaar, Dirk; Zocca, Francesca; Bazzacco, Dino

2011-06-01

Cross-talk limits of monolithic highly-segmented semiconductor detectors for high-resolution X-gamma spectrometry are investigated. Cross-talk causes false signal components yielding amplitude losses and fold-dependent shifts of the spectral lines, which partially spoil the spectroscopic performance of the detector. Two complementary electrical models are developed, which describe quantitatively the inter-channel cross-talk of monolithic segmented detectors whose electrodes are read out by charge-sensitive preamplifiers. The first is here designated as Cross-Capacitance (CC) model, the second as Split-Charge (SC) model. The CC model builds around the parasitic capacitances Cij linking the preamplifier outputs and the neighbor channel inputs. The SC model builds around the finite-value of the decoupling capacitance CC used to read out the high-voltage detector electrode. The key parameters of the models are individuated and ideas are shown to minimize their impact. Using a quasi-coaxial germanium segmented detector it is found that the SC cross-talk becomes negligible for decoupling capacitances larger than 1 nF, where instead the CC cross-talk tends to dominate. The residual cross-talk may be reduced by minimization of stray capacitances Cij, through a careful design of the layout of the Printed Circuit Board (PCB) where the input transistors are mounted. Cij can be made as low as 5 fF, but it is shown that even in such case the impact of the CC cross-talk on the detector performance is not negligible. Finally, an algorithm for cross-talk correction is presented and elaborated.

NASA multidisciplinary research grant

NASA Technical Reports Server (NTRS)

1971-01-01

Research is discussed in the multidisciplinary areas of space and planetary science; materials and radiation; systems, instrumentation, and structures; and technology and man. Highlights are identified as an alpha-recoil track method of archeological dating; infrared astronomical telescope; reaction rates data, semiconductor radiation detectors, and analysis of time-dependent systems; Gunn effect devices for microwave generation and detection, mode-locked lasers, and radiation theory; and the application of a satellite communication system to educational development. Detectors to be flown on Apollo 16 to measure heavy particle flux in the solar wind and to be part of the HEAO-A experiment on extremely heavy nuclei in cosmic rays were developed. The impact of the multidisciplinary research on university activities is described, and individual departmental reports are included.

Device for calibrating a radiation detector system

DOEpatents

Mc Fee, Matthew C.; Kirkham, Tim J.; Johnson, Tippi H.

1994-01-01

A device for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a "shield plate" or shell, and an opposing "source plate" containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, heart, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects.

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

NASA Technical Reports Server (NTRS)

Danchenko, V.

1974-01-01

Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

Advanced processing of CdTe pixel radiation detectors

NASA Astrophysics Data System (ADS)

Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

2017-12-01

We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

Novel Drift Structures for Silicon and Compound Semiconductor X-Ray and Gamma-Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley E. Patt; Jan S. Iwanczyk

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that we discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current (both bulk silicon dark current and surface dark current) and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector.

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

NASA Astrophysics Data System (ADS)

Samedov, V. V.

2017-12-01

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Device for calibrating a radiation detector system

DOEpatents

McFee, M.C.; Kirkham, T.J.; Johnson, T.H.

1994-12-27

A device is disclosed for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a ''shield plate'' or shell, and an opposing ''source plate'' containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects. 3 figures.

Compositions of doped, co-doped and tri-doped semiconductor materials

DOEpatents

Lynn, Kelvin [Pullman, WA; Jones, Kelly [Colfax, WA; Ciampi, Guido [Watertown, MA

2011-12-06

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Electromagnetic radiation detector

DOEpatents

Benson, Jay L.; Hansen, Gordon J.

1976-01-01

An electromagnetic radiation detector including a collimating window, a cathode member having a photoelectric emissive material surface angularly disposed to said window whereby radiation is impinged thereon at acute angles, an anode, separated from the cathode member by an evacuated space, for collecting photoelectrons emitted from the emissive cathode surface, and a negatively biased, high transmissive grid disposed between the cathode member and anode.

Semiconductor millimeter wavelength electronics

NASA Astrophysics Data System (ADS)

Rosenbaum, F. J.

1985-12-01

This final report summarizes the results of research carried out on topics in millimeter wavelength semiconductor electronics under an ONR Selected Research Opportunity program. Study areas included III-V compound semiconductor growth and characterization, microwave and millimeter wave device modeling, fabrication and testing, and the development of new device concepts. A new millimeter wave mixer and detector, the Gap diode was invented. Topics reported on include ballistic transport, Zener oscillations, impurities in GaAs, electron velocity-electric field calculation and measurements, etc., calculations.

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, D.C.; Fox, R.J.

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, Dimitrios C.; Fox, Richard J.

1981-01-01

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

Radiation detection system

DOEpatents

Whited, R.C.

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI/sub 2/, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

Fast front-end electronics for semiconductor tracking detectors: Trends and perspectives

NASA Astrophysics Data System (ADS)

Rivetti, Angelo

2014-11-01

In the past few years, extensive research efforts pursued by both the industry and the academia have lead to major improvements in the performance of Analog to Digital Converters (ADCs) and Time to Digital Converters (TDCs). ADCs achieving 8-10 bit resolution, 50-100 MHz conversion frequency and less than 1 mW power consumption are the today's standard, while TDCs have reached sub-picosecond time resolution. These results have been made possible by architectural upgrades combined with the use of ultra deep submicron CMOS technologies with minimum feature size of 130 nm or smaller. Front-end ASICs in which a prompt digitization is followed by signal conditioning in the digital domain can now be envisaged also within the tight power budget typically available in high density tracking systems. Furthermore, tracking detectors embedding high resolution timing capabilities are gaining interest. In the paper, ADC's and TDC's developments which are of particular relevance for the design front-end electronics for semiconductor trackers are discussed along with the benefits and challenges of exploiting such high performance building blocks in implementing the next generation of ASICs for high granularity particle detectors.

Radiation detector system having heat pipe based cooling

DOEpatents

Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

2006-10-31

A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

CVD diamond detectors for ionizing radiation

NASA Astrophysics Data System (ADS)

Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

Ultra-thin plasma panel radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Peter S.

An ultra-thin radiation detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includesmore » a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.« less

Handheld CZT radiation detector

DOEpatents

Murray, William S.; Butterfield, Kenneth B.; Baird, William

2004-08-24

A handheld CZT radiation detector having a CZT gamma-ray sensor, a multichannel analyzer, a fuzzy-logic component, and a display component is disclosed. The CZT gamma-ray sensor may be a coplanar grid CZT gamma-ray sensor, which provides high-quality gamma-ray analysis at a wide range of operating temperatures. The multichannel analyzer categorizes pulses produce by the CZT gamma-ray sensor into channels (discrete energy levels), resulting in pulse height data. The fuzzy-logic component analyzes the pulse height data and produces a ranked listing of radioisotopes. The fuzzy-logic component is flexible and well-suited to in-field analysis of radioisotopes. The display component may be a personal data assistant, which provides a user-friendly method of interacting with the detector. In addition, the radiation detector may be equipped with a neutron sensor to provide an enhanced mechanism of sensing radioactive materials.

PantherPix hybrid pixel γ-ray detector for radio-therapeutic applications

NASA Astrophysics Data System (ADS)

Neue, G.; Benka, T.; Havránek, M.; Hejtmánek, M.; Janoška, Z.; Kafka, V.; Korchak, O.; Lednický, D.; Marčišovská, M.; Marčišovský, M.; Popule, J.; Şmarhák, J.; Şvihra, P.; Tomášek, L.; Vrba, V.; Konček, O.; Semmler, M.

2018-02-01

This work focuses on the design of a semiconductor pixelated γ-ray camera with a pixel size of 1 mm2. The cost of semiconductor manufacturing is mainly driven by economies of scale, which makes silicon the cheapest semiconductor material due to its widespread utilization. The energy of γ-photons used in radiation therapy are in a range, in which the dominant interaction mechanism is Compton scattering in every conceivable sensor material. Since the Compton scattering cross section is linearly dependent upon Z, it is less rewarding to utilize high Z sensor materials, than it is in the case of X-ray detectors (X-rays interact also via the photoelectric effect whose cross section scales proportional to Zn, where n is ≈ 4,5). For the stated reasons it was decided to use the low Z material silicon (Z = 14) despite its worse detection efficiency. The proposed detector is designed as a portal detector to be used in radiation cancer therapy. The purpose of the detector is to ensure correct patient alignment, spatial dose monitoring and to provide the feedback necessary for an emergency shutdown should the spatial dose rate profile deviate from the treatment plan. Radiation therapy equipment is complex and thus failure prone and the consequences of malfunction are often life threatening. High spatial resolution and high detection efficiency are not a high design priority. The detector design priorities are focused up on radiation hardness, robustness and the ability to cover a large area cost efficiently. The quintessential idea of the PanterPix detector exploits the relaxed spatial resolution requirement to achieve the stated goals. The detector is composed of submodules, each submodule consisting of a Si sensor with an array of fully depleted detection diodes and 8 miniature custom design readout ASICs collecting and measuring the minuscule charge packets generated due to ionization in the PN junctions.

Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.

PubMed

Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V

2005-01-01

The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be < 100 microSv h(-1) after 100 d of Large Hadron Collider (LHC) operation and 10 d of cooling.

Radiation Hazard Detector

NASA Technical Reports Server (NTRS)

1978-01-01

NASA technology has made commercially available a new, inexpensive, conveniently-carried device for protection, of people exposed to potentially dangerous levels of microwave radiation. Microwaves are radio emissions of extremely high frequency. They can be hazardous but the degree of hazard is not yet well understood. Generally, it is believed that low intensity radiation of short duration is not harmful but that exposure to high levels can induce deep internal burns, affecting the circulatory and nervous systems, and particularly the eyes. The Department of Labor's Occupational Safety and Health Administration (OSHA) has established an allowable safe threshold of exposure. However, people working near high intensity sources of microwave energy-for example, radar antennas and television transmitters-may be unknowingly exposed to radiation levels beyond the safe limit. This poses not only a personal safety problem but also a problem for employers in terms of productivity loss, workman's compensation claims and possible liability litigation. Earlier-developed monitoring devices which warn personnel of dangerous radiation levels have their shortcomings. They can be cumbersome and awkward to use while working. They also require continual visual monitoring to determine if a person is in a dangerous area of radiation, and they are relatively expensive, another deterrent to their widespread adoption. In response to the need for a cheaper and more effective warning system, Jet Propulsion Laboratory developed, under NASA auspices, a new, battery-powered Microwave Radiation Hazard Detector. To bring the product to the commercial market, California Institute Research Foundation, the patent holder, granted an exclusive license to Cicoil Corporation, Chatsworth, California, an electronic components manufacturer.

Boron selenide semiconductor detectors for thermal neutron counting

NASA Astrophysics Data System (ADS)

Kargar, Alireza; Tower, Joshua; Cirignano, Leonard; Shah, Kanai

2013-09-01

Thermal neutron detectors in planar configuration were fabricated from B2Se3 (Boron Selenide) crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. In this study, the resistivity of crystals is reported and the collected pulse height spectra are presented for devices irradiated with the 241AmBe neutron source. Long-term stability of the B2Se3 devices for neutron detection under continuous bias and without being under continuous bias was investigated and the results are reported. The B2Se3 devices showed response to thermal neutrons of the 241AmBe source.

High field CdS detector for infrared radiation

NASA Technical Reports Server (NTRS)

Tyagi, R. C.; Boer, K. W.; Hadley, H. C.; Robertson, J. B.

1972-01-01

New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.

X-ray radiation detectors of ``scintillator-photoreceiving device type'' for industrial digital radiography with improved spatial resolution

NASA Astrophysics Data System (ADS)

Ryzhykov, V. D.; Lysetska, O. K.; Opolonin, O. D.; Kozin, D. N.

2003-06-01

Main types of photoreceivers used in X-ray digital radiography systems are luminescent screens that transfer the optical image onto charge collection instruments, which require cooling, and semiconductor silicon detectors, which limit the contrast sensitivity. We have developed and produced X-ray radiation detectors of "scintillator-photoreceiving device" (S-PRD) type, which are integrally located on the inverse side of the photodiode (PD). The receiving-converting circuit (RCC) is designed for data conversion into digital form and their input into PC. Software is provided for RCC control and image visualization. Main advantages of these detectors are high industrial resolution (3-5 line pairs per mm), detecting activity up to 20 μm, controlled sensitivity, low weight and small size, imaging low (0.1-0.3 mrad) object dose in real time. In this work, main characteristics of 32-, 64- and 1024-channel detectors of S-PRD type were studied and compared for X-ray sensitivity with S-PD detectors. Images of the tested objects have been obtained. Recommendations are given on the use of different scintillation materials, depending upon the purpose of a digital radiographic system. The detectors operate in a broad energy range of ionizing radiation, hence the size of the controlled object is not limited. The system is sufficiently powerful to ensure frontal (through two walls) observation of pipelines with wall thickness up to 10 cm.

Study of a new design of p-N semiconductor detector array for nuclear medicine imaging by monte carlo simulation codes.

PubMed

Hajizadeh-Safar, M; Ghorbani, M; Khoshkharam, S; Ashrafi, Z

2014-07-01

Gamma camera is an important apparatus in nuclear medicine imaging. Its detection part is consists of a scintillation detector with a heavy collimator. Substitution of semiconductor detectors instead of scintillator in these cameras has been effectively studied. In this study, it is aimed to introduce a new design of P-N semiconductor detector array for nuclear medicine imaging. A P-N semiconductor detector composed of N-SnO2 :F, and P-NiO:Li, has been introduced through simulating with MCNPX monte carlo codes. Its sensitivity with different factors such as thickness, dimension, and direction of emission photons were investigated. It is then used to configure a new design of an array in one-dimension and study its spatial resolution for nuclear medicine imaging. One-dimension array with 39 detectors was simulated to measure a predefined linear distribution of Tc(99_m) activity and its spatial resolution. The activity distribution was calculated from detector responses through mathematical linear optimization using LINPROG code on MATLAB software. Three different configurations of one-dimension detector array, horizontal, vertical one sided, and vertical double-sided were simulated. In all of these configurations, the energy windows of the photopeak were ± 1%. The results show that the detector response increases with an increase of dimension and thickness of the detector with the highest sensitivity for emission photons 15-30° above the surface. Horizontal configuration array of detectors is not suitable for imaging of line activity sources. The measured activity distribution with vertical configuration array, double-side detectors, has no similarity with emission sources and hence is not suitable for imaging purposes. Measured activity distribution using vertical configuration array, single side detectors has a good similarity with sources. Therefore, it could be introduced as a suitable configuration for nuclear medicine imaging. It has been shown that using

Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays

NASA Astrophysics Data System (ADS)

Haston, Kyle; Barber, H. Bradford; Furenlid, Lars R.; Salçin, Esen; Bora, Vaibhav

2011-10-01

Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {Si(t)} | {x, y, z, E}).

Multispectral Superconducting Quantum Detectors

DTIC Science & Technology

1995-08-01

Noise 30 2.2.6.3 YBCO QSKIP Noise Equivalent Power 31 2.2.7 Competing LWIR Semiconductor Based Quantum Detectors 33 2.2.8 Conclusions on Operation...spectrum. Of particular interest are photodetectors operating in the midwave 3-5um (MWIR) and longwave 8-12um ( LWIR ) infrared spectra. Interest in...body photon radiation in the MWIR and LWIR spectral bands. With a significant black body photon radiation, passive night imaging and target

Simulation of radiation environment for the LHeC detector

NASA Astrophysics Data System (ADS)

Nayaz, Abdullah; Piliçer, Ercan; Joya, Musa

2017-02-01

The detector response and simulation of radiation environment for the Large Hadron electron Collider (LHeC) baseline detector is estimated to predict its performance over the lifetime of the project. In this work, the geometry of the LHeC detector, as reported in LHeC Conceptual Design Report (CDR), built in FLUKA Monte Carlo tool in order to simulate the detector response and radiation environment. For this purpose, events of electrons and protons with high enough energy were sent isotropically from interaction point of the detector. As a result, the detector response and radiation background for the LHeC detector, with different USRBIN code (ENERGY, HADGT20M, ALL-CHAR, ALL-PAR) in FLUKA, are presented.

Radiation damage effects on solid state detectors

NASA Technical Reports Server (NTRS)

Trainor, J. H.

1972-01-01

Totally depleted silicon diodes are discussed which are used as nuclear particle detectors in investigations of galactic and solar cosmic radiation and trapped radiation. A study of radiation and chemical effects on the diodes was conducted. Work on electron and proton irradiation of surface barrier detectors with thicknesses up to 1 mm was completed, and work on lithium-drifted silicon devices with thicknesses of several millimeters was begun.

Radiation detector having a multiplicity of individual detecting elements

DOEpatents

Whetten, Nathan R.; Kelley, John E.

1985-01-01

A radiation detector has a plurality of detector collection element arrays immersed in a radiation-to-electron conversion medium. Each array contains a multiplicity of coplanar detector elements radially disposed with respect to one of a plurality of positions which at least one radiation source can assume. Each detector collector array is utilized only when a source is operative at the associated source position, negating the necessity for a multi-element detector to be moved with respect to an object to be examined. A novel housing provides the required containment of a high-pressure gas conversion medium.

Compound semiconductor detectors for X-ray astronomy: Spectroscopic measurements and material characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bavdaz, M.; Kraft, S.; Peacock, A.

1998-12-31

The use of some specific compound semiconductors in the fabrication of high energy X-ray detectors shows significant potential for X-ray astrophysics space missions. The authors are currently investigating three high purity crystals--CdZnTe, GaAs and TlBr--as the basis for future hard X-ray detectors (above 10 keV). In this paper the authors present the first results on CdZnTe and GaAs based detectors and evaluate the factors currently still constraining the performance. Energy resolutions (FWHM) of 0.9 keV and 1.1 keV at 14 keV and 60 keV, respectively, have been obtained with an epitaxial GaAs detector, while 0.7 keV and 1.5 keV FWHMmore » were measured at the same energies with a CdZnTe detector. Based on these results it is clear, that the next generation of X-ray astrophysics missions now in the planning phase may well consider extending the photon energy range up to {approximately} 100 keV by use of efficient detectors with reasonable spectroscopic capabilities.« less

Total-dose radiation effects data for semiconductor devices, volume 1. [radiation resistance of components for the Galileo Project

NASA Technical Reports Server (NTRS)

Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

1981-01-01

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

Radiation Hard Silicon Particle Detectors for Phase-II LHC Trackers

NASA Astrophysics Data System (ADS)

Oblakowska-Mucha, A.

2017-02-01

The major LHC upgrade is planned after ten years of accelerator operation. It is foreseen to significantly increase the luminosity of the current machine up to 1035 cm-2s-1 and operate as the upcoming High Luminosity LHC (HL-LHC) . The major detectors upgrade, called the Phase-II Upgrade, is also planned, a main reason being the aging processes caused by severe particle radiation. Within the RD50 Collaboration, a large Research and Development program has been underway to develop silicon sensors with sufficient radiation tolerance for HL-LHC trackers. In this summary, several results obtained during the testing of the devices after irradiation to HL-LHC levels are presented. Among the studied structures, one can find advanced sensors types like 3D silicon detectors, High-Voltage CMOS technologies, or sensors with intrinsic gain (LGAD). Based on these results, the RD50 Collaboration gives recommendation for the silicon detectors to be used in the detector upgrade.

In situ radiation test of silicon and diamond detectors operating in superfluid helium and developed for beam loss monitoring

NASA Astrophysics Data System (ADS)

Kurfürst, C.; Dehning, B.; Sapinski, M.; Bartosik, M. R.; Eisel, T.; Fabjan, C.; Rementeria, C. A.; Griesmayer, E.; Eremin, V.; Verbitskaya, E.; Zabrodskii, A.; Fadeeva, N.; Tuboltsev, Y.; Eremin, I.; Egorov, N.; Härkönen, J.; Luukka, P.; Tuominen, E.

2015-05-01

As a result of the foreseen increase in the luminosity of the Large Hadron Collider, the discrimination between the collision products and possible magnet quench-provoking beam losses of the primary proton beams is becoming more critical for safe accelerator operation. We report the results of ongoing research efforts targeting the upgrading of the monitoring system by exploiting Beam Loss Monitor detectors based on semiconductors located as close as possible to the superconducting coils of the triplet magnets. In practice, this means that the detectors will have to be immersed in superfluid helium inside the cold mass and operate at 1.9 K. Additionally, the monitoring system is expected to survive 20 years of LHC operation, resulting in an estimated radiation fluence of 1×1016 proton/cm2, which corresponds to a dose of about 2 MGy. In this study, we monitored the signal degradation during the in situ irradiation when silicon and single-crystal diamond detectors were situated in the liquid/superfluid helium and the dependences of the collected charge on fluence and bias voltage were obtained. It is shown that diamond and silicon detectors can operate at 1.9 K after 1×1016 p/cm2 irradiation required for application as BLMs, while the rate of the signal degradation was larger in silicon detectors than in the diamond ones. For Si detectors this rate was controlled mainly by the operational mode, being larger at forward bias voltage.

Total-dose radiation effects data for semiconductor devices (1989 supplement)

NASA Technical Reports Server (NTRS)

Martin, Keith E.; Coss, James R.; Goben, Charles A.; Shaw, David C.; Farmanesh, Sam; Davarpanah, Michael M.; Craft, Leroy H.; Price, William E.

1990-01-01

Steady state, total dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. Two primary radiation source types were used: Cobalt-60 gamma rays and a Dynamitron electron accelerator capable of delivering 2.5 MeV electrons at a steady rate.

Nuclear radiation-warning detector that measures impedance

DOEpatents

Savignac, Noel Felix; Gomez, Leo S; Yelton, William Graham; Robinson, Alex; Limmer, Steven

2013-06-04

This invention is a nuclear radiation-warning detector that measures impedance of silver-silver halide on an interdigitated electrode to detect light or radiation comprised of alpha particles, beta particles, gamma rays, X rays, and/or neutrons. The detector is comprised of an interdigitated electrode covered by a layer of silver halide. After exposure to alpha particles, beta particles, X rays, gamma rays, neutron radiation, or light, the silver halide is reduced to silver in the presence of a reducing solution. The change from the high electrical resistance (impedance) of silver halide to the low resistance of silver provides the radiation warning that detected radiation levels exceed a predetermined radiation dose threshold.

Flame detector operable in presence of proton radiation

NASA Technical Reports Server (NTRS)

Walker, D. J.; Turnage, J. E.; Linford, R. M. F.; Cornish, S. D. (Inventor)

1974-01-01

A detector of ultraviolet radiation for operation in a space vehicle which orbits through high intensity radiation areas is described. Two identical ultraviolet sensor tubes are mounted within a shield which limits to acceptable levels the amount of proton radiation reaching the sensor tubes. The shield has an opening which permits ultraviolet radiation to reach one of the sensing tubes. The shield keeps ultraviolet radiation from reaching the other sensor tube, designated the reference tube. The circuitry of the detector subtracts the output of the reference tube from the output of the sensing tube, and any portion of the output of the sensing tube which is due to proton radiation is offset by the output of the reference tube. A delay circuit in the detector prevents false alarms by keeping statistical variations in the proton radiation sensed by the two sensor tubes from developing an output signal.

The Radiation Assessment Detector (RAD) Investigation

NASA Astrophysics Data System (ADS)

Hassler, D. M.; Zeitlin, C.; Wimmer-Schweingruber, R. F.; Böttcher, S.; Martin, C.; Andrews, J.; Böhm, E.; Brinza, D. E.; Bullock, M. A.; Burmeister, S.; Ehresmann, B.; Epperly, M.; Grinspoon, D.; Köhler, J.; Kortmann, O.; Neal, K.; Peterson, J.; Posner, A.; Rafkin, S.; Seimetz, L.; Smith, K. D.; Tyler, Y.; Weigle, G.; Reitz, G.; Cucinotta, F. A.

2012-09-01

The Radiation Assessment Detector (RAD) on the Mars Science Laboratory (MSL) is an energetic particle detector designed to measure a broad spectrum of energetic particle radiation. It will make the first-ever direct radiation measurements on the surface of Mars, detecting galactic cosmic rays, solar energetic particles, secondary neutrons, and other secondary particles created both in the atmosphere and in the Martian regolith. The radiation environment on Mars, both past and present, may have implications for habitability and the ability to sustain life. Radiation exposure is also a major concern for future human missions. The RAD instrument combines charged- and neutral-particle detection capability over a wide dynamic range in a compact, low-mass, low-power instrument. These capabilities are required in order to measure all the important components of the radiation environment. RAD consists of the RAD Sensor Head (RSH) and the RAD Electronics Box (REB) integrated together in a small, compact volume. The RSH contains a solid-state detector telescope with three silicon PIN diodes for charged particle detection, a thallium doped Cesium Iodide scintillator, plastic scintillators for neutron detection and anti-coincidence shielding, and the front-end electronics. The REB contains three circuit boards, one with a novel mixed-signal ASIC for processing analog signals and an associated control FPGA, another with a second FPGA to communicate with the rover and perform onboard analysis of science data, and a third board with power supplies and power cycling or "sleep"-control electronics. The latter enables autonomous operation, independent of commands from the rover. RAD is a highly capable and highly configurable instrument that paves the way for future compact energetic particle detectors in space.

Ultrafast transient grating radiation to optical image converter

DOEpatents

Stewart, Richard E; Vernon, Stephen P; Steel, Paul T; Lowry, Mark E

2014-11-04

A high sensitivity transient grating ultrafast radiation to optical image converter is based on a fixed transmission grating adjacent to a semiconductor substrate. X-rays or optical radiation passing through the fixed transmission grating is thereby modulated and produces a small periodic variation of refractive index or transient grating in the semiconductor through carrier induced refractive index shifts. An optical or infrared probe beam tuned just below the semiconductor band gap is reflected off a high reflectivity mirror on the semiconductor so that it double passes therethrough and interacts with the radiation induced phase grating therein. A small portion of the optical beam is diffracted out of the probe beam by the radiation induced transient grating to become the converted signal that is imaged onto a detector.

Large dynamic range radiation detector and methods thereof

DOEpatents

Marrs, Roscoe E [Livermore, CA; Madden, Norman W [Sparks, NV

2012-02-14

According to one embodiment, a radiation detector comprises a scintillator and a photodiode optically coupled to the scintillator. The radiation detector also includes a bias voltage source electrically coupled to the photodiode, a first detector operatively electrically coupled to the photodiode for generating a signal indicative of a level of a charge at an output of the photodiode, and a second detector operatively electrically coupled to the bias voltage source for generating a signal indicative of an amount of current flowing through the photodiode.

Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

NASA Technical Reports Server (NTRS)

Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

1985-01-01

Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.

Strategies for Radiation Hardness Testing of Power Semiconductor Devices

NASA Technical Reports Server (NTRS)

Soltis, James V. (Technical Monitor); Patton, Martin O.; Harris, Richard D.; Rohal, Robert G.; Blue, Thomas E.; Kauffman, Andrew C.; Frasca, Albert J.

2005-01-01

Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.

Real-time self-networking radiation detector apparatus

DOEpatents

Kaplan, Edward [Stony Brook, NY; Lemley, James [Miller Place, NY; Tsang, Thomas Y [Holbrook, NY; Milian, Laurence W [East Patchogue, NY

2007-06-12

The present invention is for a radiation detector apparatus for detecting radiation sources present in cargo shipments. The invention includes the features of integrating a bubble detector sensitive to neutrons and a GPS system into a miniaturized package that can wirelessly signal the presence of radioactive material in shipping containers. The bubble density would be read out if such indicated a harmful source.

Integrated semiconductor quantum dot scintillation detector: Ultimate limit for speed and light yield

DOE PAGES

Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; ...

2016-03-30

Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 10 15 cm -3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication ofmore » a semiconductor scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm 3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less

Long-distance transmission of light in a scintillator-based radiation detector

DOEpatents

Dowell, Jonathan L.; Talbott, Dale V.; Hehlen, Markus P.

2017-07-11

Scintillator-based radiation detectors capable of transmitting light indicating the presence of radiation for long distances are disclosed herein. A radiation detector can include a scintillator layer and a light-guide layer. The scintillator layer is configured to produce light upon receiving incident radiation. The light-guide layer is configured to receive light produced by the scintillator layer and either propagate the received light through the radiation detector or absorb the received light and emit light, through fluorescence, that is propagated through the radiation detector. A radiation detector can also include an outer layer partially surrounding the scintillator layer and light-guide layer. The index of refraction of the light-guide layer can be greater than the index of refraction of adjacent layers.

Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

2014-01-01

Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

Monolithic active pixel radiation detector with shielding techniques

DOEpatents

Deptuch, Grzegorz W.

2018-03-20

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Monolithic active pixel radiation detector with shielding techniques

DOEpatents

Deptuch, Grzegorz W.

2016-09-06

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

PubMed

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

Basic Performance Test of a Prototype PET Scanner Using CdTe Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Ueno, Y.; Morimoto, Y.; Tsuchiya, K.; Yanagita, N.; Kojima, S.; Ishitsu, T.; Kitaguchi, H.; Kubo, N.; Zhao, S.; Tamaki, N.; Amemiya, K.

2009-02-01

A prototype positron emission tomography (PET) scanner using CdTe semiconductor detectors was developed, and its initial evaluation was conducted. The scanner was configured to form a single detector ring with six separated detector units, each having 96 detectors arranged in three detector layers. The field of view (FOV) size was 82 mm in diameter. Basic physical performance indicators of the scanner were measured through phantom studies and confirmed by rat imaging. The system-averaged energy resolution and timing resolution were 5.4% and 6.0 ns (each in FWHM) respectively. Spatial resolution measured at FOV center was 2.6 mm FWHM. Scatter fraction was measured and calculated in a National Electrical Manufacturers Association (NEMA)-fashioned manner using a 3-mm diameter hot capillary in a water-filled 80-mm diameter acrylic cylinder. The calculated result was 3.6%. Effect of depth of interaction (DOI) measurement was demonstrated by comparing hot-rod phantom images reconstructed with and without DOI information. Finally, images of a rat myocardium and an implanted tumor were visually assessed, and the imaging performance was confirmed.

Radiation Measurements Performed with Active Detectors Relevant for Human Space Exploration.

PubMed

Narici, Livio; Berger, Thomas; Matthiä, Daniel; Reitz, Günther

2015-01-01

A reliable radiation risk assessment in space is a mandatory step for the development of countermeasures and long-duration mission planning in human spaceflight. Research in radiobiology provides information about possible risks linked to radiation. In addition, for a meaningful risk evaluation, the radiation exposure has to be assessed to a sufficient level of accuracy. Consequently, both the radiation models predicting the risks and the measurements used to validate such models must have an equivalent precision. Corresponding measurements can be performed both with passive and active devices. The former is easier to handle, cheaper, lighter, and smaller but they measure neither the time dependence of the radiation environment nor some of the details useful for a comprehensive radiation risk assessment. Active detectors provide most of these details and have been extensively used in the International Space Station. To easily access such an amount of data, a single point access is becoming essential. This review presents an ongoing work on the development of a tool that allows obtaining information about all relevant measurements performed with active detectors providing reliable inputs for radiation model validation.

PAMELA Space Mission: The Transition Radiation Detector

NASA Astrophysics Data System (ADS)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2003-07-01

PAMELA telescope is a satellite-b orne magnetic spectrometer built to fulfill the primary scientific objectives of detecting antiparticles (antiprotons and positrons) in the cosmic rays, and to measure spectra of particles in cosmic rays. The PAMELA telescope is currently under integration and is composed of: a silicon tracker housed in a permanent magnet, a time of flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD detector is composed of 9 sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD detector characteristics will be described along with its performance studied exposing the detector to particle beams of electrons, pions, muons and protons of different momenta at both CERN-PS and CERN-SPS facilities.

High resolution amorphous silicon radiation detectors

DOEpatents

Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

1992-05-26

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

High resolution amorphous silicon radiation detectors

DOEpatents

Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

1992-01-01

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

Semiconductor neutron detectors

NASA Astrophysics Data System (ADS)

Gueorguiev, Andrey; Hong, Huicong; Tower, Joshua; Kim, Hadong; Cirignano, Leonard; Burger, Arnold; Shah, Kanai

2016-09-01

Lithium Indium Selenide (LiInSe2) has been under development in RMD Inc. and Fisk University for room temperature thermal neutron detection due to a number of promising properties. The recent advances of the crystal growth, material processing, and detector fabrication technologies allowed us to fabricate large detectors with 100 mm2 active area. The thermal neutron detection sensitivity and gamma rejection ratio (GRR) were comparable to 3He tube with 10 atm gas pressure at comparable dimensions. The synthesis, crystal growth, detector fabrication, and characterization are reported in this paper.

Pulse-height loss in the signal readout circuit of compound semiconductor detectors

NASA Astrophysics Data System (ADS)

Nakhostin, M.; Hitomi, K.

2018-06-01

Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

Plural-wavelength flame detector that discriminates between direct and reflected radiation

NASA Technical Reports Server (NTRS)

Hall, Gregory H. (Inventor); Barnes, Heidi L. (Inventor); Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor); Smith, Harvey S. (Inventor)

1997-01-01

A flame detector employs a plurality of wavelength selective radiation detectors and a digital signal processor programmed to analyze each of the detector signals, and determine whether radiation is received directly from a small flame source that warrants generation of an alarm. The processor's algorithm employs a normalized cross-correlation analysis of the detector signals to discriminate between radiation received directly from a flame and radiation received from a reflection of a flame to insure that reflections will not trigger an alarm. In addition, the algorithm employs a Fast Fourier Transform (FFT) frequency spectrum analysis of one of the detector signals to discriminate between flames of different sizes. In a specific application, the detector incorporates two infrared (IR) detectors and one ultraviolet (UV) detector for discriminating between a directly sensed small hydrogen flame, and reflections from a large hydrogen flame. The signals generated by each of the detectors are sampled and digitized for analysis by the digital signal processor, preferably 250 times a second. A sliding time window of approximately 30 seconds of detector data is created using FIFO memories.

Direct detector for terahertz radiation

DOEpatents

Wanke, Michael C [Albuquerque, NM; Lee, Mark [Albuquerque, NM; Shaner, Eric A [Albuquerque, NM; Allen, S James [Santa Barbara, CA

2008-09-02

A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating gate to near pinch-off greatly increases the detector's resonant response magnitude over prior QW FET detectors while maintaining frequency selectivity. The split-grating-gated QW FET shows a tunable resonant plasmon response to FIR radiation that makes possible an electrically sweepable spectrometer-on-a-chip with no moving mechanical optical parts. Further, the narrow spectral response and signal-to-noise are adequate for use of the split-grating-gated QW FET in a passive, multispectral terahertz imaging system. The detector can be operated in a photoconductive or a photovoltaic mode. Other embodiments include uniform front and back gates to independently vary the carrier densities in the channel region, a thinned substrate to increase bolometric responsivity, and a resistive shunt to connect the fingers of the grating gate in parallel and provide a uniform gate-channel voltage along the length of the channel to increase the responsivity and improve the spectral resolution.

Charge Collection Efficiency in a segmented semiconductor detector interstrip region

NASA Astrophysics Data System (ADS)

Alarcon-Diez, V.; Vickridge, I.; Jakšić, M.; Grilj, V.; Schmidt, B.; Lange, H.

2017-09-01

Charged particle semiconductor detectors have been used in Ion Beam Analysis (IBA) for over four decades without great changes in either design or fabrication. However one area where improvement is desirable would be to increase the detector solid angle so as to improve spectrum statistics for a given incident beam fluence. This would allow the use of very low fluences opening the way, for example, to increase the time resolution in real-time RBS or for analysis of materials that are highly sensitive to beam damage. In order to achieve this goal without incurring the costs of degraded resolution due to kinematic broadening or large detector capacitance, a single-chip segmented detector (SEGDET) was designed and built within the SPIRIT EU infrastructure project. In this work we present the Charge Collection Efficiency (CCE) in the vicinity between two adjacent segments focusing on the interstrip zone. Microbeam Ion Beam Induced Charge (IBIC) measurements with different ion masses and energies were used to perform X-Y mapping of (CCE), as a function of detector operating conditions (bias voltage changes, detector housing possibilities and guard ring configuration). We show the (CCE) in the edge region of the active area and have also mapped the charge from the interstrip region, shared between adjacent segments. The results indicate that the electrical extent of the interstrip region is very close to the physical extent of the interstrip and guard ring structure with interstrip impacts contributing very little to the complete spectrum. The interstrip contributions to the spectra that do occur, can be substantially reduced by an offline anti-coincidence criterion applied to list mode data, which should also be easy to implement directly in the data acquisition software.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

DOEpatents

Hansen, W.L.; Haller, E.E.

1980-09-19

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Overview of radiation effects research in photonics

NASA Astrophysics Data System (ADS)

Webb, Robert C.; Cohn, Lewis M.; Taylor, Edward W.; Greenwell, Roger A.

1995-05-01

A brief overview of ongoing radiation effects research in photonics is presented focusing on integrated optic and acousto-optic components. A short summary of radiation-induced effects in electro-optic modulators, detector arrays, and other photonic technologies is presented along with extensive references. The coordinated radiation effects studies among researchers within the Tri-Service Organizations and international experimental teams are beginning to demonstrate consistent measurements of radiation-induced effects in photonic components and confirming earlier reported data. This paper will present an overview of these coordinated investigations and focus on key research being conducted with the AFMC Phillips Laboratory, Naval Research Laboratory, Defence Nuclear Agency, NATO Nuclear Effects Task Group, and the Tri-Service Photonics Coordinating Committee.

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Novel drift structures for silicon and compound semiconductor X-ray and gamma-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.E.; Iwanczyk, J.S.

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X-rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that the authors discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector. The main features of the silicon drift structures for X rays and light detection aremore » very small anode capacitance independent of the overall detector size, low noise, and high throughput. To take advantage of the small detector capacitance, the first stage of the electronics needs to be integrated into the detector anode. In the gamma-ray application, factors other than electronic noise dominate, and there is no need to integrate the electronics into the anode. Thus, a different drift structure is needed in conjunction with a high-Z material. The main features in this case are large active detector volume and electron-only induced signal.« less

Silicon carbide semiconductor technology for high temperature and radiation environments

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.

1993-01-01

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Characterization of Thallium Bromide (TlBr) for Room Temperature Radiation Detectors

NASA Astrophysics Data System (ADS)

Smith, Holland McTyeire

Thallium bromide (TlBr) has emerged as a remarkably well-suited material for room temperature radiation detection. The unique combination of high-Z elements, high density, suitable band gap, and excellent electrical transport properties present in TlBr have brought device performance up to par with CdZnTe (CZT), the current market-leading room temperature radiation detector material. TlBr research is at an earlier stage than that of CZT, giving hope that the material will see even further improvement in electronic properties. Improving a resistive semiconductor material requires knowledge of deep levels present in the material and the effects of these deep levels on transport properties. Very few deep level studies have been conducted on TlBr, and none with the depth required to generate useful growth suggestions. In this dissertation, deep levels in nominally undoped and doped TlBr samples are studied with electrical and optical methods. Photo-Induced Conductivity Transient Spectroscopy (PICTS) is used to discover many deep levels in TlBr electrically. These levels are compared to sub-band gap optical transitions originating from defects observed in emission spectra. The results of this research indicate that the origin of resistivity in TlBr is likely due to deep level defects pinning the Fermi level at least ˜0.7 eV from either the conduction or valence band edge. The effect of dopants and deep levels on transport in TlBr is assessed with microwave photoconductivity decay analysis. It is found that Pb-, Se-, and O-doping decreases carrier lifetime in TlBr, whereas C-doping does not. TlBr exhibits weak ionic conductivity at room temperature, which both negatively affects the leakage current of detectors and leads to device degradation over time. Researchers are actively looking for ways to reduce or eliminate the ionic conductivity, but are faced with an intriguing challenge of materials engineering: is it possible to mitigate the ionic conduction of Tl

Enhanced radiation detectors using luminescent materials

DOEpatents

Vardeny, Zeev V.; Jeglinski, Stefan A.; Lane, Paul A.

2001-01-01

A radiation detecting device comprising a radiation sensing element, and a layer of luminescent material to expand the range of wavelengths over which the sensing element can efficiently detect radiation. The luminescent material being selected to absorb radiation at selected wavelengths, causing the luminescent material to luminesce, and the luminescent radiation being detected by the sensing element. Radiation sensing elements include photodiodes (singly and in arrays), CCD arrays, IR detectors and photomultiplier tubes. Luminescent materials include polymers, oligomers, copolymers and porphyrines, Luminescent layers include thin films, thicker layers, and liquid polymers.

Perforated semiconductor neutron detectors for battery operated portable modules

NASA Astrophysics Data System (ADS)

McGregor, Douglas S.; Bellinger, Steven L.; Bruno, David; McNeil, Walter J.; Patterson, Eric; Shultis, J. Kenneth; Solomon, C. J.; Unruh, Troy

2007-09-01

Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma (ICP) reactive ion etching (RIE) and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The prototype devices delivered over 3.8% thermal neutron detection efficiency while operating on only 15 volts. The highest efficiency devices thus far have delivered over 12% thermal neutron detection efficiency. The miniature devices are 5.6 mm in diameter and require minimal power to operate, ranging from 3.3 volts to 15 volts, depending upon the amplifying electronics. The battery operated devices have been incorporated into compact modules with a digital readout. Further, the new modules have incorporated wireless readout technology and can be monitored remotely. The neutron detection modules can be used for neutron dosimetry and neutron monitoring. When coupled with high-density polyethylene, the detectors can be used to measure fission neutrons from spontaneous fission sources. Monto Carlo analysis indicates that the devices can be used in cargo containers as a passive search tool for spontaneous fission sources, such as 240Pu. Measurements with a 252Cf source are being conducted for verification.

Radiation Measurements Performed with Active Detectors Relevant for Human Space Exploration

PubMed Central

Narici, Livio; Berger, Thomas; Matthiä, Daniel; Reitz, Günther

2015-01-01

A reliable radiation risk assessment in space is a mandatory step for the development of countermeasures and long-duration mission planning in human spaceflight. Research in radiobiology provides information about possible risks linked to radiation. In addition, for a meaningful risk evaluation, the radiation exposure has to be assessed to a sufficient level of accuracy. Consequently, both the radiation models predicting the risks and the measurements used to validate such models must have an equivalent precision. Corresponding measurements can be performed both with passive and active devices. The former is easier to handle, cheaper, lighter, and smaller but they measure neither the time dependence of the radiation environment nor some of the details useful for a comprehensive radiation risk assessment. Active detectors provide most of these details and have been extensively used in the International Space Station. To easily access such an amount of data, a single point access is becoming essential. This review presents an ongoing work on the development of a tool that allows obtaining information about all relevant measurements performed with active detectors providing reliable inputs for radiation model validation. PMID:26697408

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Cartiglia, Nicolo; Pace, Emanuele; Talamonti, Cinzia

2015-10-01

The 10th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD) was held in Florence, at Dipartimento di Fisica ed Astronomia on October 8-10, 2014. It has been aimed at discussing frontier research activities in several application fields as nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference concern performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), ultra-fast silicon detectors design and manufacturing, high-band gap semiconductor detectors, novel semiconductor-based devices for medical applications, radiation damage issues in semiconductors and related radiation-hardening technologies.

Comparative dosimetry of diode and diamond detectors in electron beams for intraoperative radiation therapy.

PubMed

Björk, P; Knöös, T; Nilsson, P

2000-11-01

The aim of the present study is to examine the validity of using silicon semiconductor detectors in degraded electron beams with a broad energy spectrum and a wide angular distribution. A comparison is made with diamond detector measurements, which is the dosimeter considered to give the best results provided that dose rate effects are corrected for. Two-dimensional relative absorbed dose distributions in electron beams (6-20 MeV) for intraoperative radiation therapy (IORT) are measured in a water phantom. To quantify deviations between the detectors, a dose comparison tool that simultaneously examines the dose difference and distance to agreement (DTA) is used to evaluate the results in low- and high-dose gradient regions, respectively. Uncertainties of the experimental measurement setup (+/- 1% and +/- 0.5 mm) are taken into account by calculating a composite distribution that fails this dose-difference and DTA acceptance limit. Thus, the resulting area of disagreement should be related to differences in detector performance. The dose distributions obtained with the diode are generally in very good agreement with diamond detector measurements. The buildup region and the dose falloff region show good agreement with increasing electron energy, while the region outside the radiation field close to the water surface shows an increased difference with energy. The small discrepancies in the composite distributions are due to several factors: (a) variation of the silicon-to-water collision stopping-power ratio with electron energy, (b) a more pronounced directional dependence for diodes than for diamonds, and (c) variation of the electron fluence perturbation correction factor with depth. For all investigated treatment cones and energies, the deviation is within dose-difference and DTA acceptance criteria of +/- 3% and +/- 1 mm, respectively. Therefore, p-type silicon diodes are well suited, in the sense that they give results in close agreement with diamond detectors

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams.

PubMed

Grad, Michael; Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J

2012-12-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University's Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm - 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H + ), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles ( 4 He ++ ). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms.

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

PubMed Central

Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J.

2013-01-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University’s Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm – 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H+), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles (4He++). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms. PMID:24058378

Simple dynamic electromagnetic radiation detector

NASA Technical Reports Server (NTRS)

Been, J. F.

1972-01-01

Detector monitors gamma dose rate at particular position in a radiation facility where a mixed neutron-gamma environment exists, thus determining reactor power level changes. Device also maps gamma intensity profile across a neutron-gamma beam.

Integrator Circuitry for Single Channel Radiation Detector

NASA Technical Reports Server (NTRS)

Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

2008-01-01

Input circuitry is provided for a high voltage operated radiation detector to receive pulses from the detector having a rise time in the range of from about one nanosecond to about ten nanoseconds. An integrator circuit, which utilizes current feedback, receives the incoming charge from the radiation detector and creates voltage by integrating across a small capacitor. The integrator utilizes an amplifier which closely follows the voltage across the capacitor to produce an integrator output pulse with a peak value which may be used to determine the energy which produced the pulse. The pulse width of the output is stretched to approximately 50 to 300 nanoseconds for use by subsequent circuits which may then use amplifiers with lower slew rates.

Feasibility of a semiconductor dosimeter to monitor skin dose in interventional radiology.

PubMed

Meyer, P; Regal, R; Jung, M; Siffert, P; Mertz, L; Constantinesco, A

2001-10-01

The design and preliminary test results of a semiconductor silicon dosimeter are presented in this article. Use of this dosimeter is foreseen for real-time skin dose control in interventional radiology. The strong energy dependence of this kind of radiation detector is well overcome by filtering the silicon diode. Here, the optimal filter features have been calculated by numerical Monte Carlo simulations. A prototype has been built and tested in a radiological facility. The first experimental results show a good match between the filtered semiconductor diode response and an ionization chamber response, within 2% fluctuation in a 2.2 to 4.1 mm Al half-value layer (HVL) energy range. Moreover, the semiconductor sensor response is linear from 0.02 Gy/min to at least 6.5 Gy/min, covering the whole dose rate range found in interventional radiology. The results show that a semiconductor dosimeter could be used to monitor skin dose during the majority of procedures using x-rays below 150 keV. The use of this device may assist in avoiding radiation-induced skin injuries and lower radiation levels during interventional procedures.

Calculating the Responses of Self-Powered Radiation Detectors.

NASA Astrophysics Data System (ADS)

Thornton, D. A.

Available from UMI in association with The British Library. The aim of this research is to review and develop the theoretical understanding of the responses of Self -Powered Radiation Detectors (SPDs) in Pressurized Water Reactors (PWRs). Two very different models are considered. A simple analytic model of the responses of SPDs to neutrons and gamma radiation is presented. It is a development of the work of several previous authors and has been incorporated into a computer program (called GENSPD), the predictions of which have been compared with experimental and theoretical results reported in the literature. Generally, the comparisons show reasonable consistency; where there is poor agreement explanations have been sought and presented. Two major limitations of analytic models have been identified; neglect of current generation in insulators and over-simplified electron transport treatments. Both of these are developed in the current work. A second model based on the Explicit Representation of Radiation Sources and Transport (ERRST) is presented and evaluated for several SPDs in a PWR at beginning of life. The model incorporates simulation of the production and subsequent transport of neutrons, gamma rays and electrons, both internal and external to the detector. Neutron fluxes and fuel power ratings have been evaluated with core physics calculations. Neutron interaction rates in assembly and detector materials have been evaluated in lattice calculations employing deterministic transport and diffusion methods. The transport of the reactor gamma radiation has been calculated with Monte Carlo, adjusted diffusion and point-kernel methods. The electron flux associated with the reactor gamma field as well as the internal charge deposition effects of the transport of photons and electrons have been calculated with coupled Monte Carlo calculations of photon and electron transport. The predicted response of a SPD is evaluated as the sum of contributions from individual

Radiation detector device for rejecting and excluding incomplete charge collection events

DOEpatents

Bolotnikov, Aleksey E.; De Geronimo, Gianluigi; Vernon, Emerson; Yang, Ge; Camarda, Giuseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B.

2016-05-10

A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.

SEM observation of p-n junction in semiconductors using fountain secondary electron detector

NASA Astrophysics Data System (ADS)

Sekiguchi, Takashi; Kimura, Takashi; Iwai, Hideo

2016-11-01

When we observe a p-n junction in a certain semiconductors using scanning electron microscope, it is known that the p-type region is brighter than n-type region in secondary electron (SE) image. To clarify this origin, the p-n junctions in 4H-SiC was observed using fountain secondary electron detector (FSED). The original FSED image shows brighter p-region than n-region, which is similar to the SE image taken by Everhart-Thonley detector, mainly due to the background component of SE signal. By subtracting the background, the line profiles of FSED signal across p-n junction have been recorded according to the SE energies. These profiles may include the detailed information of p-n junction.

Radiation induced failures of complementary metal oxide semiconductor containing pacemakers: a potentially lethal complication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewin, A.A.; Serago, C.F.; Schwade, J.G.

1984-10-01

New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmiasmore » which may result from such damage.« less

Radiation Assessment Detector for Mars Science Laboratory

NASA Image and Video Library

2010-11-09

The Radiation Assessment Detector, shown prior to its September 2010 installation onto NASA Mars rover Curiosity, will aid future human missions to Mars by providing information about the radiation environment on Mars and on the way to Mars.

Identification of dopant-induced point defects and their effect on the performance of CZT detectors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Gul, Rubi; Bolotnikov, Aleksey E.; Camarda, Giuseppe S.; Cui, Yonggang; Didic, Václav; Egarievwe, Stephen U.; Hossain, Anwar; Roy, Utpal N.; Yang, Ge; James, Ralph B.

2016-09-01

In our prior research we investigated room-temperature radiation detectors (CZT, CMT, CdMgTe, CTS, among other compound semiconductors) for point defects related to different dopants and impurities. In this talk we will report on our most recent research on newly grown CZT crystals doped with In, In+Al, In+Ni, and In+Sn. The main focus will be on the study of dopant-induced point defects using deep-level current transient spectroscopy (i-DLTS). In addition the performance, ? product, gamma-ray spectral response and internal electric field of the detectors were measured and correlated with the dopant-induced point defects and their concentrations. Characterization of the detectors was carried out using i-DLTS for the point defects, Pockels effect for the internal electric-field distribution, and γ-ray spectroscopy for the spectral properties.

Efficient Charge Collection in Coplanar-Grid Radiation Detectors

NASA Astrophysics Data System (ADS)

Kunc, J.; Praus, P.; Belas, E.; Dědič, V.; Pekárek, J.; Grill, R.

2018-05-01

We model laser-induced transient-current waveforms in radiation coplanar-grid detectors. Poisson's equation is solved by the finite-element method and currents induced by a photogenerated charge are obtained using the Shockley-Ramo theorem. The spectral response on a radiation flux is modeled by Monte Carlo simulations. We show a 10 × improved spectral resolution of the coplanar-grid detector using differential signal sensing. We model the current waveform dependence on the doping, depletion width, diffusion, and detector shielding, and their mutual dependence is discussed in terms of detector optimization. The numerical simulations are successfully compared to experimental data, and further model simplifications are proposed. The space charge below electrodes and a nonhomogeneous electric field on a coplanar-grid anode are found to be the dominant contributions to laser-induced transient-current waveforms.

TH-CD-201-12: Preliminary Evaluation of Organic Field Effect Transistors as Radiation Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syme, A; Lin, H; Rubio-Sanchez, J

Purpose: To fabricate organic field effect transistors (OFETs) and evaluate their performance before and after exposure to ionizing radiation. To determine if OFETs have potential to function as radiation dosimeters. Methods: OFETs were fabricated on both Si/SiO{sub 2} wafers and flexible polymer substrates using standard processing techniques. Pentacene was used as the organic semiconductor material and the devices were fabricated in a bottom gate configuration. Devices were irradiated using an orthovoltage treatment unit (120 kVp x-rays). Threshold voltage values were measured with the devices in saturation mode and quantified as a function of cumulative dose. Current-voltage characteristics of the devicesmore » were measured using a Keithley 2614 SourceMeter SMU Instrument. The devices were connected to the reader but unpowered during irradiations. Results: Devices fabricated on Si/SiO2 wafers demonstrated excellent linearity (R{sup 2} > 0.997) with threshold voltages that ranged between 15 and 36 V. Devices fabricated on a flexible polymer substrate had substantially smaller threshold voltages (∼ 4 – 8 V) and slightly worse linearity (R{sup 2} > 0.98). The devices demonstrated excellent stability in I–V characteristics over a large number (>2000) cycles. Conclusion: OFETs have demonstrated excellent potential in radiation dosimetry applications. A key advantage of these devices is their composition, which can be substantially more tissue-equivalent at low photon energies relative to many other types of radiation detector. In addition, fabrication of organic electronics can employ techniques that are faster, simpler and cheaper than conventional silicon-based devices. These results support further development of organic electronic devices for radiation detection purposes. Funding Support, Disclosures, and Conflict of Interest: This work was funded by the Natural Sciences and Engineering Research Council of Canada.« less

Development of a 3D Brain PET Scanner Using CdTe Semiconductor Detectors and Its First Clinical Application

NASA Astrophysics Data System (ADS)

Morimoto, Y.; Ueno, Y.; Takeuchi, W.; Kojima, S.; Matsuzaki, K.; Ishitsu, T.; Umegaki, K.; Kiyanagi, Y.; Kubo, N.; Katoh, C.; Shiga, T.; Shirato, H.; Tamaki, N.

2011-10-01

Targeting improved spatial resolution, a three-dimensional positron-emission-tomography (PET) scanner employing CdTe semiconductor detectors and using depth-of-interaction (DOI) information was developed, and its physical performance was evaluated. This PET scanner is the first to use semiconductor detectors dedicated to the human brain and head-and-neck region. Imaging performance of the scanner used for 18F -fluorodeoxy glucose (FDG) scans of phantoms and human brains was evaluated. The gantry of the scanner has a 35.0-cm-diameter patient port, the trans-axial field of view (FOV) is 31.0 cm, and the axial FOV is 24.6 cm. The energy resolution averaged over all detector channels and timing resolution were 4.1% and 6.8 ns (each in FWHM), respectively. Spatial resolution measured at the center of FOV was 2.3-mm FWHM-which is one of the best resolutions achieved by human PET scanners. Noise-equivalent count ratio (NEC2R) has a maximum in the energy window of 390 to 540 keV and is 36 kcps/Bq/cm3 at 3.7 kBq/cm3 . The sensitivity of the system according to NEMA 1994 was 25.9 cps/Bq/cm3. Scatter fraction of the scanner is 37% for the energy window of 390 to 540 keV and 23% for 450 to 540 keV. Images of a hot-rod phantom and images of brain glucose metabolism show that the structural accuracy of the images obtained with the semiconductor PET scanner is higher than that possible with a conventional Bismuth Germanium Oxide (BGO) PET scanner. In addition, the developed scanner permits better delineation of the head-and-neck cancer. These results show that the semiconductor PET scanner will play a major role in the upcoming era of personalized medicine.

Field-Induced-Gap Infrared Detectors

NASA Technical Reports Server (NTRS)

Elliott, C. Thomas

1990-01-01

Semimetals become semiconductors under applied magnetic fields. New detectors require less cooling equipment because they operate at temperatures higher than liquid-helium temperatures required by extrinsic-semiconductor detectors. Magnetic fields for detectors provided by electromagnets based on recently-discovered high-transition-temperature superconducting materials. Detector material has to be semiconductor, in which photon absorbed by exciting electron/hole pair across gap Eg of forbidden energies between valence and conduction energy bands. Magnetic- and compositional-tuning effects combined to obtain two-absorber detector having narrow passband. By variation of applied magnetic field, passband swept through spectrum of interest.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

PubMed

Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

2011-08-01

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. © 2011 Optical Society of America

SiC As An Energetic Particle Detector

NASA Technical Reports Server (NTRS)

Yan, F.; Hicks, J.; Shappirio, Mark D.; Brown, S.; Smith, C.; Xin, X.; Zhao, J. H.

2005-01-01

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

A field-shaping multi-well avalanche detector for direct conversion amorphous selenium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldan, A. H.; Zhao, W.

2013-01-15

Purpose: A practical detector structure is proposed to achieve stable avalanche multiplication gain in direct-conversion amorphous selenium radiation detectors. Methods: The detector structure is referred to as a field-shaping multi-well avalanche detector. Stable avalanche multiplication gain is achieved by eliminating field hot spots using high-density avalanche wells with insulated walls and field-shaping inside each well. Results: The authors demonstrate the impact of high-density insulated wells and field-shaping to eliminate the formation of both field hot spots in the avalanche region and high fields at the metal-semiconductor interface. Results show a semi-Gaussian field distribution inside each well using the field-shaping electrodes,more » and the electric field at the metal-semiconductor interface can be one order-of-magnitude lower than the peak value where avalanche occurs. Conclusions: This is the first attempt to design a practical direct-conversion amorphous selenium detector with avalanche gain.« less

SNM Movement Detection/Radiation Sensors and Advanced Materials Portfolio Review, CdMnTe (CMT) Gamma Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov,A.

2009-06-02

The project goals are: (1) Develop CMT radiation detectors - Demonstrate feasibility (Phase 1 is complete) and Improve material properties and device performance; (2) This project will lead to novel radiation detectors - high detection efficiency, high energy-resolution, ambient-temperature operation, and low production cost; and (3) Such detectors are needed in areas of nonproliferation and national security for detection of SNM. Research highlights are: (1) We achieved our Phase-I goal - Demonstration of CMT detector performance approaching that of CZT detectors; (2) Demonstrated that In-doped CMT is much closer to its anticipated performance as radiation detectors than other alternative materials,more » TlBr and HgI{sub 2} - Large crystal volumes, 10{sup 10}{Omega}{center_dot}cm, 3 x 10{sup -3}cm{sup 2}/V, and stable response; and (3) Conducted material and device characterization experiments - Detectors: I-V, {mu}{sub e}, ({mu}{tau}){sub e}, internal E fields, energy spectra, and high-resolution x-ray response mapping data and Materials - DLTS, TCT, PL, EPDs, XRD, PCD and IR transmission.« less

System for determining the type of nuclear radiation from detector output pulse shape

DOEpatents

Miller, William H.; Berliner, Ronald R.

1994-01-01

A radiation detection system determines the type of nuclear radiation received in a detector by producing a correlation value representative of the statistical cross correlation between the shape of the detector signal and pulse shape data previously stored in memory and characteristic of respective types of radiation. The correlation value is indicative of the type of radiation. The energy of the radiation is determined from the detector signal and is used to produce a spectrum of radiation energies according to radiation type for indicating the nature of the material producing the radiation.

System for determining the type of nuclear radiation from detector output pulse shape

DOEpatents

Miller, W.H.; Berliner, R.R.

1994-09-13

A radiation detection system determines the type of nuclear radiation received in a detector by producing a correlation value representative of the statistical cross correlation between the shape of the detector signal and pulse shape data previously stored in memory and characteristic of respective types of radiation. The correlation value is indicative of the type of radiation. The energy of the radiation is determined from the detector signal and is used to produce a spectrum of radiation energies according to radiation type for indicating the nature of the material producing the radiation. 2 figs.

Variable-Temperature Cryostat For Radiation-Damage Testing Of Germanium Detectors

NASA Technical Reports Server (NTRS)

Floyd, Samuel R.; Puc, Bernard P.

1992-01-01

Variable-temperature cryostats developed to study radiation damage to, and annealing of, germanium gamma-ray detectors. Two styles: one accommodates large single detector and one accommodates two medium-sized detectors. New cryostats allow complete testing of large-volume germanium gamma-ray detectors without breaking cryostat vacuum and removing detectors for annealing.

Modeling radiation damage to pixel sensors in the ATLAS detector

NASA Astrophysics Data System (ADS)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

NASA Astrophysics Data System (ADS)

Khorsandi, Behrooz

There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

NASA Astrophysics Data System (ADS)

Aydın, Güral; Usta, Metin; Oktay, Adem

2018-06-01

Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

Characteristics of detectors for prevention of nuclear radiation terrorism

NASA Astrophysics Data System (ADS)

Kolesnikov, S. V.; Ryabeva, E. V.; Samosadny, V. T.

2017-01-01

There is description of one type of detectors in use for the task of nuclear terrorism cases prevention to determine the direction to the radioactive source and geometrical structure of radiation field. This type is a modular detector with anisotropic sensitivity. The principle of work of a modular detecting device is the simultaneous operation of several detecting modules with anisotropic sensitivity to gamma radiation.

CONCORD: comparison of cosmic radiation detectors in the radiation field at aviation altitudes

NASA Astrophysics Data System (ADS)

Meier, Matthias M.; Trompier, François; Ambrozova, Iva; Kubancak, Jan; Matthiä, Daniel; Ploc, Ondrej; Santen, Nicole; Wirtz, Michael

2016-05-01

Space weather can strongly affect the complex radiation field at aviation altitudes. The assessment of the corresponding radiation exposure of aircrew and passengers has been a challenging task as well as a legal obligation in the European Union for many years. The response of several radiation measuring instruments operated by different European research groups during joint measuring flights was investigated in the framework of the CONCORD (COmparisoN of COsmic Radiation Detectors) campaign in the radiation field at aviation altitudes. This cooperation offered the opportunity to measure under the same space weather conditions and contributed to an independent quality control among the participating groups. The CONCORD flight campaign was performed with the twin-jet research aircraft Dassault Falcon 20E operated by the flight facility Oberpfaffenhofen of the German Aerospace Center (Deutsches Zentrum für Luft- und Raumfahrt, DLR). Dose rates were measured at four positions in the atmosphere in European airspace for about one hour at each position in order to obtain acceptable counting statistics. The analysis of the space weather situation during the measuring flights demonstrates that short-term solar activity did not affect the results which show a very good agreement between the readings of the instruments of the different institutes.

Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lao, Y. F.; Perera, A. G. U., E-mail: uperera@gsu.edu; Center for Nano-Optics

2016-03-14

Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3–5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ{sub 0}, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μmmore » in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ{sub 0} is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ{sub 0}. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.« less

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

NASA Technical Reports Server (NTRS)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

PubMed

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

DQE as detection probability of the radiation detectors

NASA Astrophysics Data System (ADS)

Zanella, Giovanni

2008-02-01

In this paper it is shown that quantum efficiency (DQE), as commonly defined for imaging detectors, can be extended to all radiation detectors with the meaning of detection probability, if Poisson statistics applies. This unified approach is possible in time-domain at zero spatial-frequency.

Processing circuitry for single channel radiation detector

NASA Technical Reports Server (NTRS)

Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

2009-01-01

Processing circuitry is provided for a high voltage operated radiation detector. An event detector utilizes a comparator configured to produce an event signal based on a leading edge threshold value. A preferred event detector does not produce another event signal until a trailing edge threshold value is satisfied. The event signal can be utilized for counting the number of particle hits and also for controlling data collection operation for a peak detect circuit and timer. The leading edge threshold value is programmable such that it can be reprogrammed by a remote computer. A digital high voltage control is preferably operable to monitor and adjust high voltage for the detector.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

PubMed Central

Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

2013-01-01

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

Nuclear Science Symposium, 21st, Scintillation and Semiconductor Counter Symposium, 14th, and Nuclear Power Systems Symposium, 6th, Washington, D.C., December 11-13, 1974, Proceedings

NASA Technical Reports Server (NTRS)

1975-01-01

Papers are presented dealing with latest advances in the design of scintillation counters, semiconductor radiation detectors, gas and position sensitive radiation detectors, and the application of these detectors in biomedicine, satellite instrumentation, and environmental and reactor instrumentation. Some of the topics covered include entopistic scintillators, neutron spectrometry by diamond detector for nuclear radiation, the spherical drift chamber for X-ray imaging applications, CdTe detectors in radioimmunoassay analysis, CAMAC and NIM systems in the space program, a closed loop threshold calibrator for pulse height discriminators, an oriented graphite X-ray diffraction telescope, design of a continuous digital-output environmental radon monitor, and the optimization of nanosecond fission ion chambers for reactor physics. Individual items are announced in this issue.

RADIATION DETECTOR SYSTEM

DOEpatents

Gundlach, J.C.; Kelley, G.G.

1958-02-25

This patent relates to radiation detection devices and presents a unique detection system especialiy desirable for portable type instruments using a Geiger-Mueller for a high voltage battery, thereby reducing the size and weight of the instrument, by arranging a one-shot multivibrator to recharge a capacitance applying operating potential to tho Geiger-Mueller tube each time a nuclear particle is detected. When detection occurs, the multivibrator further delivers a pulse to an appropriate indicator doing away with the necessity for the pulse amplifier conventionally intermediate between the detector and indicator in pulse detection systems.

Electromagnetic radiation screening of semiconductor devices for long life applications

NASA Technical Reports Server (NTRS)

Hall, T. C.; Brammer, W. G.

1972-01-01

A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

Gold-coated copper cone detector as a new standard detector for F2 laser radiation at 157 nm.

PubMed

Kück, Stefan; Brandt, Friedhelm; Taddeo, Mario

2005-04-20

A new standard detector for high-accuracy measurements of F2 laser radiation at 157 nm is presented. This gold-coated copper cone detector permits the measurement of average powers up to 2 W with an uncertainty of approximately 1%. To the best of our knowledge, this is the first highly accurate standard detector for F2 laser radiation for this power level. It is fully characterized according to Guide to the Expression of Uncertainty in Measurement of the International Organization for Standardization and is connected to the calibration chain for laser radiation established by the German National Metrology Institute.

Fast and broadband detector for laser radiation

NASA Astrophysics Data System (ADS)

Scorticati, Davide; Crapella, Giacomo; Pellegrino, Sergio

2018-02-01

We developed a fast detector (patent pending) based on the Laser Induced Transverse Voltage (LITV) effect. The advantage of detectors using the LITV effect over pyroelectric sensors and photodiodes for laser radiation measurements is the combination of an overall fast response time, broadband spectral acceptance, high saturation threshold to direct laser irradiation and the possibility to measure pulsed as well as cw-laser sources. The detector is capable of measuring the energy of single laser pulses with repetition frequencies up to the MHz range, adding the possibility to also measure the output power of cw-lasers. Moreover, the thermal nature of the sensor enables the capability to work in a broadband spectrum, from UV to THz as well as the possibility of operating in a broad-range (10-3-102 W/cm2 ) of incident average optical power densities of the laser radiation, without the need of adopting optical filters nor other precautions.

Multi-directional radiation detector using photographic film

NASA Astrophysics Data System (ADS)

Junet, L. K.; Majid, Z. A. Abdul; Sapuan, A. H.; Sayed, I. S.; Pauzi, N. F.

2014-11-01

Ionising radiation has always been part of our surrounding and people are continuously exposed to it. Ionising radiation is harmful to human health, thus it is vital to monitor the radiation. To monitor radiation, there are three main points that should be observed cautiously, which are energy, quantity, and direction of the radiation sources. A three dimensional (3D) dosimeter is an example of a radiation detector that provide these three main points. This dosimeter is able to record the radiation dose distribution in 3D. Applying the concept of dose detection distribution, study has been done to design a multi-directional radiation detector of different filter thicknesses. This is obtained by designing a cylinder shaped aluminum filter with several layers of different thickness. Black and white photographic material is used as a radiation-sensitive material and a PVC material has been used as the enclosure. The device is then exposed to a radiation source with different exposure factors. For exposure factor 70 kVp, 16 mAs; the results have shown that optical density (OD) value at 135° is 1.86 higher compared with an OD value at 315° which is 0.71 as the 135° area received more radiation compare to 315° region. Furthermore, with an evidence of different angle of film give different value of OD shows that this device has a multidirectional ability. Materials used to develop this device are widely available in the market, thus reducing the cost of development and making it suitable for commercialisation.

Three-dimensional architecture for solid state radiation detectors

DOEpatents

Parker, S.

1999-03-30

A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals. 45 figs.

Three-dimensional architecture for solid state radiation detectors

DOEpatents

Parker, Sherwood

1999-01-01

A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals.

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

NASA Technical Reports Server (NTRS)

Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

1986-01-01

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

Research and Development Strategies in the Semiconductor Industry

NASA Astrophysics Data System (ADS)

Bowling, Allen

2003-03-01

In the 21st Century semiconductor industry, there is a critical balance between internally funded semiconductor research and development (R) and externally funded R. External R may include jointly-funded research collaborations/partnerships with other device manufacturers, jointly-funded consortia-based R, and individually-funded research programs at universities and other contract research locations. Each of these approaches has merits and each has costs. There is a critical balance between keeping the internal research and development pipeline filled and keeping it from being overspent. To meet both competitive schedule and cost goals, a semiconductor device manufacturer must decide on a model for selection of internal versus external R. Today, one of the most critical decisions is whether or not to do semiconductor research and development on 300 mm silicon wafers. Equipment suppliers are doing first development on 300 mm equipment. So, for the device manufacturer, there is a balance between the cost of doing development on 300 mm wafers and the development time schedule driven by equipment availability. In the face of these cost and schedule elements, device manufacturers are looking to consortia such as SEMATECH, SRC, and SRC MARCO for early development and screening of new materials and device structure approaches. This also causes much more close development collaboration between device manufacturer and equipment supplier. Many device manufacturers are also making use of direct contract research with universities and other contract-research organizations, such as IMEC, LETI, and other government-funded research organizations around the world. To get the most out of these external research interactions, the company must develop a strategy for management and technology integration of external R.

Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

DOEpatents

Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.

2003-03-04

A method, system and a radiation detector system for use therein are provided for determining the depth distribution of radiation-emitting material distributed in a source medium, such as a contaminated field, without the need to take samples, such as extensive soil samples, to determine the depth distribution. The system includes a portable detector assembly with an x-ray or gamma-ray detector having a detector axis for detecting the emitted radiation. The radiation may be naturally-emitted by the material, such as gamma-ray-emitting radionuclides, or emitted when the material is struck by other radiation. The assembly also includes a hollow collimator in which the detector is positioned. The collimator causes the emitted radiation to bend toward the detector as rays parallel to the detector axis of the detector. The collimator may be a hollow cylinder positioned so that its central axis is perpendicular to the upper surface of the large area source when positioned thereon. The collimator allows the detector to angularly sample the emitted radiation over many ranges of polar angles. This is done by forming the collimator as a single adjustable collimator or a set of collimator pieces having various possible configurations when connected together. In any one configuration, the collimator allows the detector to detect only the radiation emitted from a selected range of polar angles measured from the detector axis. Adjustment of the collimator or the detector therein enables the detector to detect radiation emitted from a different range of polar angles. The system further includes a signal processor for processing the signals from the detector wherein signals obtained from different ranges of polar angles are processed together to obtain a reconstruction of the radiation-emitting material as a function of depth, assuming, but not limited to, a spatially-uniform depth distribution of the material within each layer. The detector system includes detectors having

Researchers Validate UV Light's Use in Improving Semiconductors | News |

Science.gov Websites

device. The ability to use different classes of semiconductors could create additional possibilities for integrating a variety of different semiconductors in the future," Park said. The researchers explored

TlBr and TlBr xI 1-x crystals for γ-ray detectors

NASA Astrophysics Data System (ADS)

Churilov, Alexei V.; Ciampi, Guido; Kim, Hadong; Higgins, William M.; Cirignano, Leonard J.; Olschner, Fred; Biteman, Viktor; Minchello, Mark; Shah, Kanai S.

2010-04-01

TlBr and TlBr xI 1-x are wide bandgap semiconductor materials being investigated for applications in γ-ray spectroscopy. They have a good combination of density and atomic numbers, promising to make them very efficient detectors. Their low melting points and simple cubic and orthorhombic crystal structures are favorable for bulk crystal growth. However, these semiconductors need to be extremely pure to become useful as radiation detectors. Impurities can lead to charge trapping and scattering, reducing the charge transit lengths and limiting the detector thickness to <1 mm. Additional purification steps were implemented to improve the purity and mobility-lifetime product ( μτ) of electrons. Detector-grade TlBr with the electron μτ product of up to 6×10 -3 cm 2/V has been produced, which allowed operation of detectors up to 15 mm thickness. The ternary TlBr xI 1-x was investigated at different compositions to vary the bandgap and explore the effect of added TlI on the long term stability of detectors. The material analysis and detector characterization results are included.

Portable Radiation Detectors

NASA Technical Reports Server (NTRS)

1997-01-01

Through a Small Business Innovation Research (SBIR) contract from Kennedy Space Center, General Pneumatics Corporation's Western Research Center satisfied a NASA need for a non-clogging Joule-Thomson cryostat to provide very low temperature cooling for various sensors. This NASA-supported cryostat development played a key part in the development of more portable high-purity geranium gamma-ray detectors. Such are necessary to discern between the radionuclides in medical, fuel, weapon, and waste materials. The outcome of the SBIR project is a cryostat that can cool gamma-ray detectors, without vibration, using compressed gas that can be stored compactly and indefinitely in a standby mode. General Pneumatics also produces custom J-T cryostats for other government, commercial and medical applications.

Nonlinear optical transmittance of semiconductors in the presence of high-intensity radiation fields

NASA Astrophysics Data System (ADS)

Dong, H. M.; Han, F. W.; Duan, Y. F.; Huang, F.; Liu, J. L.

2018-04-01

We developed a systematic theoretical study of nonlinear optical properties of semiconductors. The eight-band kṡp model and the energy-balance equation are employed to calculate the transmission and optical absorption coefficients in the presence of both the linear one-photon absorption and the nonlinear two-photon absorption (TPA) processes. A substantial reduction of the optical transmittance far below the band-gap can be observed under relatively high-intensity radiation fields due to the nonlinear TPA. The TPA-induced optical transmittance decreases with increasing intensity of the radiation fields. Our theoretical results are in line with those observed experimentally. The theoretical approach can be applied to understand the nonlinear optical properties of semiconductors under high-field conditions.

Semiconductor photoelectrochemistry

NASA Technical Reports Server (NTRS)

Buoncristiani, A. M.; Byvik, C. E.

1983-01-01

Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

Neutron responsive self-powered radiation detector

DOEpatents

Brown, Donald P.; Cannon, Collins P.

1978-01-01

An improved neutron responsive self-powered radiation detector is disclosed in which the neutron absorptive central emitter has a substantially neutron transmissive conductor collector sheath spaced about the emitter and the space between the emitter and collector sheath is evacuated.

Detection system for high-resolution gamma radiation spectroscopy with neutron time-of-flight filtering

DOEpatents

Dioszegi, Istvan; Salwen, Cynthia; Vanier, Peter

2014-12-30

A .gamma.-radiation detection system that includes at least one semiconductor detector such as HPGe-Detector, a position-sensitive .alpha.-Detector, a TOF Controller, and a Digitizer/Integrator. The Digitizer/Integrator starts to process the energy signals of a .gamma.-radiation sent from the HPGe-Detector instantly when the HPGe-Detector detects the .gamma.-radiation. Subsequently, it is determined whether a coincidence exists between the .alpha.-particles and .gamma.-radiation signal, based on a determination of the time-of-flight of neutrons obtained from the .alpha.-Detector and the HPGe-Detector. If it is determined that the time-of-flight falls within a predetermined coincidence window, the Digitizer/Integrator is allowed to continue and complete the energy signal processing. If, however, there is no coincidence, the Digitizer/Integrator is instructed to be clear and reset its operation instantly.

Far-Infrared Blocked Impurity Band Detector Development

NASA Technical Reports Server (NTRS)

Hogue, H. H.; Guptill, M. T.; Monson, J. C.; Stewart, J. W.; Huffman, J. E.; Mlynczak, M. G.; Abedin, M. N.

2007-01-01

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors

DTIC Science & Technology

2014-06-28

constructed from inexpensive semiconductor lasers could lead to the development of novel neuro-inspired optical computing devices (threshold detectors ...optical computing devices (threshold detectors , logic gates, signal recognition, etc.). Other topics of research included the analysis of extreme events in...Extreme events is nowadays a highly active field of research. Rogue waves, earthquakes of high magnitude and financial crises are all rare and

On the possibility of using the dynamic Franz - Keldysh effect to detect the parameters of high-power IR laser radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigor'ev, A M

2011-05-31

The increase in the absorption of light by a semiconductor (when the light photon energy is somewhat smaller than the semiconductor bandgap or equals it) in the presence of a strong light wave (for which the semiconductor is transparent) has been investigated. The possibility of designing novel light detectors for measuring the energy parameters and spatial and temporal characteristics of high-power IR laser radiation is demonstrated. (measurement of laser radiation parameters)

Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

PubMed

Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

Dynamic Electrothermal Model of a Sputtered Thermopile Thermal Radiation Detector for Earth Radiation Budget Applications

NASA Technical Reports Server (NTRS)

Weckmann, Stephanie

1997-01-01

The Clouds and the Earth's Radiant Energy System (CERES) is a program sponsored by the National Aeronautics and Space Administration (NASA) aimed at evaluating the global energy balance. Current scanning radiometers used for CERES consist of thin-film thermistor bolometers viewing the Earth through a Cassegrain telescope. The Thermal Radiation Group, a laboratory in the Department of Mechanical Engineering at Virginia Polytechnic Institute and State University, is currently studying a new sensor concept to replace the current bolometer: a thermopile thermal radiation detector. This next-generation detector would consist of a thermal sensor array made of thermocouple junction pairs, or thermopiles. The objective of the current research is to perform a thermal analysis of the thermopile. Numerical thermal models are particularly suited to solve problems for which temperature is the dominant mechanism of the operation of the device (through the thermoelectric effect), as well as for complex geometries composed of numerous different materials. Feasibility and design specifications are studied by developing a dynamic electrothermal model of the thermopile using the finite element method. A commercial finite element-modeling package, ALGOR, is used.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

PubMed

Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

Novel detectors for silicon based microdosimetry, their concepts and applications

NASA Astrophysics Data System (ADS)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Evaluation of clinical use of OneDose™ metal oxide semiconductor field-effect transistor detectors compared to thermoluminescent dosimeters to measure skin dose for adult patients with acute lymphoblastic leukemia

PubMed Central

Al-Mohammed, Huda Ibrahim

2011-01-01

Background: Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to their bone marrow transplant. It involves the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore, it is important to measure and monitor the skin dose during the treatment. Thermoluminescent dosimeters (TLDs) and the OneDose™ metal oxide semiconductor field effect transistor (MOSFET) detectors are used during treatment delivery to measure the radiation dose and compare it with the target prescribed dose. Aims: The primary goal of this study was to measure the variation of skin dose using OneDose MOSFET detectors and TLD detectors, and compare the results with the target prescribed dose. The secondary aim was to evaluate the simplicity of use and determine if one system was superior to the other in clinical use. Material and Methods: The measurements involved twelve adult patients diagnosed with acute lymphoblastic leukemia. TLD and OneDose MOSFET dosimetry were performed at ten different anatomical sites of each patient. Results: The results showed that there was a variation between skin dose measured with OneDose MOSFET detectors and TLD in all patients. However, the variation was not significant. Furthermore, the results showed for every anatomical site there was no significant different between the prescribed dose and the dose measured by either TLD or OneDose MOSFET detectors. Conclusion: There were no significant differences between the OneDose MOSFET and TLDs in comparison to the target prescribed dose. However, OneDose MOSFET detectors give a direct read-out immediately after the treatment, and their simplicity of use to compare with TLD detectors may make them preferred for clinical use. PMID:22171243

On the radiation tolerance of SU-8, a new material for gaseous microstructure radiation detector fabrication

NASA Astrophysics Data System (ADS)

Key, M. J.; Cindro, V.; Lozano, M.

2004-12-01

SU-8 photosensitive epoxy resin was developed for the fabrication of high-aspect ratio microstructures in MEMS and microengineering applications, and has potential for use in the construction of novel gaseous micropattern radiation detectors. However, little is known of the behaviour of the cured material under irradiation. Mechanical properties of SU-8 film have been measured as a function of neutron exposure and compared with Kapton ® polyimide and Mylar ® PET polyester films, materials routinely used in gaseous radiation detectors, to asses the suitability of SU-8 based microstructures for gaseous detector applications. After exposure to a reactor core neutron fluence of 7.5×10 18 n cm -2, the new material showed a high level of resistance to radiation damage, comparable to Kapton film.

Methods for radiation detection and characterization using a multiple detector probe

DOEpatents

Akers, Douglas William; Roybal, Lyle Gene

2014-11-04

Apparatuses, methods, and systems relating to radiological characterization of environments are disclosed. Multi-detector probes with a plurality of detectors in a common housing may be used to substantially concurrently detect a plurality of different radiation activities and types. Multiple multi-detector probes may be used in a down-hole environment to substantially concurrently detect radioactive activity and contents of a buried waste container. Software may process, analyze, and integrate the data from the different multi-detector probes and the different detector types therein to provide source location and integrated analysis as to the source types and activity in the measured environment. Further, the integrated data may be used to compensate for differential density effects and the effects of radiation shielding materials within the volume being measured.

Apertureless scanning microscope probe as a detector of semiconductor laser emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dunaevskiy, Mikhail, E-mail: Mike.Dunaeffsky@mail.ioffe.ru; National Research University of Information Technologies, Mechanics and Optics; Dontsov, Anton

2015-04-27

An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the lightmore » absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.« less

ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

NASA Astrophysics Data System (ADS)

De Jesus, Joel

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of

A radiation detector fabricated from silicon photodiode.

PubMed

Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

1984-12-01

A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

Radiation damage of the HEAO C-1 germanium detectors

NASA Technical Reports Server (NTRS)

Mahoney, W. A.; Ling, J. C.; Jacobson, A. S.

1981-01-01

The effects of radiation damage from proton bombardment of the four HEAO C-1 high purity germanium detectors have been measured and compared to predictions. Because of the presence of numerous gamma-ray lines in the detector background spectra and because of the relatively long exposure time of the HEAO 3 satellite to cosmic-ray and trapped protons, it has been possible to measure both the energy and time dependence of radiation damage. After 100 d in orbit, each of the four detectors has been exposed to approximately 3 x 10 to the 7th protons/sq cm, and the average energy resolution at 1460 keV had degraded from 3.2 keV fwhm to 8.6 keV fwhm. The lines were all broadened to the low energy side although the line profile was different for each of the four detectors. The damage-related contribution to the degradation in energy resolution was found to be linear in energy and proton influence.

SPECTROSCOPIC INVESTIGATION OF (NH4)2S TREATED GaSeTe FOR RADIATION DETECTOR APPLICATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nelson, A; Laurence, T; Conway, A

2009-08-04

The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH{sub 4}){sub 2}S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH{sub 4}){sub 2}S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH{sub 4}){sub 2}S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH{sub 4}){sub 2}S modification of the interfacial electronic structure withmore » the goal of optimizing the metal/GaSeTe interface for radiation detector devices.« less

Radiation Effects on LWS Detectors and Deglitching of LWS Data

NASA Astrophysics Data System (ADS)

Burgdorf, M.; Harwood, A.; Sidher, S. D.

Glitches are caused by the effects of ionising particles (either a primary cosmic ray, interplanetary or belt electron, or a secondary generated in the spacecraft structure) on the detectors. There was roughly one glitch per ten seconds per detector during the normal period of LWS operation. These energetic particles cause a sudden jump in the ramp voltage, due to a quantity of charge being dumped on the integrating amplifier. They also cause a change in the detector responsivity which affects the following ramps. Glitches were detected in the automatic pipeline processing for each observation with the LWS that was performed with a standard Astronomical Observation Template. We describe the method with which this deglitching was carried out. Based on the findings from the deglitching algorithms we compare proton and electron fluences with average glitch rates and look for correlations. >From the glitch statistics one can also derive the energy distribution of the ionising radiation that hit the detectors. This energy spectrum agrees roughly with model predictions and therefore shows that it is in principle possible to predict the properties of the ionising radiation to which the detectors of future missions will be exposed. This is important, because for the LWS we found that the effect of an ionising radiation hit on the detectors was rather different, and more severe, than had been predicted before launch: An ionising particle could cause the detector to become unstable and spike spontaneously for some seconds following a hit, resulting in a strongly increased noise and requiring a re-adjustment of the bias levels.

Microstructured silicon radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Derzon, Mark S.; Draper, Bruce L.

2017-03-14

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

Field-deployable gamma-radiation detectors for DHS use

NASA Astrophysics Data System (ADS)

Mukhopadhyay, Sanjoy

2007-09-01

Recently, the Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial off-the-shelf and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS' requirements in terms of sensitivity, resolution, response time, and reach-back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron's identiFINDER TM, which primarily uses sodium iodide crystals (3.18 x 2.54cm cylinders) as gamma detectors, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack TM that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field1. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity, better resolution, and faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation, and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets an alarm condition. When a substantial alarm level is reached, the system automatically triggers the saving of relevant spectral data and

Vertex detectors: The state of the art and future prospects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damerell, C.J.S.

1997-01-01

We review the current status of vertex detectors (tracking microscopes for the recognition of charm and bottom particle decays). The reasons why silicon has become the dominant detector medium are explained. Energy loss mechanisms are reviewed, as well as the physics and technology of semiconductor devices, emphasizing the areas of most relevance for detectors. The main design options (microstrips and pixel devices, both CCD`s and APS`s) are discussed, as well as the issue of radiation damage, which probably implies the need to change to detector media beyond silicon for some vertexing applications. Finally, the evolution of key performance parameters overmore » the past 15 years is reviewed, and an attempt is made to extrapolate to the likely performance of detectors working at the energy frontier ten years from now.« less

Compact endocavity diagnostic probes for nuclear radiation detection

DOEpatents

Cui, Yonggang; James, Ralph; Bolotnikov, Aleksey

2014-08-26

This invention relates to the field of radiation imaging. In particular, the invention relates to an apparatus and a method for imaging tissue or an inanimate object using a novel probe that has an integrated solid-state semiconductor detector and complete readout electronics circuitry.

Ultrafast Radiation Detection by Modulation of an Optical Probe Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vernon, S P; Lowry, M E

2006-02-22

We describe a new class of radiation sensor that utilizes optical interferometry to measure radiation-induced changes in the optical refractive index of a semiconductor sensor medium. Radiation absorption in the sensor material produces a transient, non-equilibrium, electron-hole pair distribution that locally modifies the complex, optical refractive index of the sensor medium. Changes in the real (imaginary) part of the local refractive index produce a differential phase shift (absorption) of an optical probe used to interrogate the sensor material. In contrast to conventional radiation detectors where signal levels are proportional to the incident energy, signal levels in these optical sensors aremore » proportional to the incident radiation energy flux. This allows for reduction of the sensor form factor with no degradation in detection sensitivity. Furthermore, since the radiation induced, non-equilibrium electron-hole pair distribution is effectively measured ''in place'' there is no requirement to spatially separate and collect the generated charges; consequently, the sensor risetime is of the order of the hot-electron thermalization time {le} 10 fs and the duration of the index perturbation is determined by the carrier recombination time which is of order {approx} 600 fs in, direct-bandgap semiconductors, with a high density of recombination defects; consequently, the optical sensors can be engineered with sub-ps temporal response. A series of detectors were designed, and incorporated into Mach Zehnder and Fabry-Perot interferometer-based detection systems: proof of concept, lower detection sensitivity, Mach-Zehnder detectors were characterized at beamline 6.3 at SSRL; three generations of high sensitivity single element and imaging Fabry-Perot detectors were measured at the LLNL Europa facility. Our results indicate that this technology can be used to provide x-ray detectors and x-ray imaging systems with single x-ray sensitivity and S/N {approx} 30 at x

One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

PubMed Central

2009-01-01

The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452

Comparative Response of Microchannel Plate and Channel Electron Multiplier Detectors to Penetrating Radiation in Space

DOE PAGES

Funsten, Herbert O.; Harper, Ronnie W.; Dors, Eric E.; ...

2015-10-02

Channel electron multiplier (CEM) and microchannel plate (MCP) detectors are routinely used in space instrumentation for measurement of space plasmas. Here, our goal is to understand the relative sensitivities of these detectors to penetrating radiation in space, which can generate background counts and shorten detector lifetime. We use 662 keV γ-rays as a proxy for penetrating radiation such as γ-rays, cosmic rays, and high-energy electrons and protons that are ubiquitous in the space environment. We find that MCP detectors are ~20 times more sensitive to 662 keV γ-rays than CEM detectors. This is attributed to the larger total area ofmore » multiplication channels in an MCP detector that is sensitive to electronic excitation and ionization resulting from the interaction of penetrating radiation with the detector material. In contrast to the CEM detector, whose quantum efficiency ε γ for 662 keVγ -rays is found to be 0.00175 and largely independent of detector bias, the quantum efficiency of the MCP detector is strongly dependent on the detector bias, with a power law index of 5.5. Lastly, background counts in MCP detectors from penetrating radiation can be reduced using MCP geometries with higher pitch and smaller channel diameter.« less

Detection of gamma-neutron radiation by solid-state scintillation detectors. Detection of gamma-neutron radiation by novel solid-state scintillation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryzhikov, V.; Grinyov, B.; Piven, L.

It is known that solid-state scintillators can be used for detection of both gamma radiation and neutron flux. In the past, neutron detection efficiencies of such solid-state scintillators did not exceed 5-7%. At the same time it is known that the detection efficiency of the gamma-neutron radiation characteristic of nuclear fissionable materials is by an order of magnitude higher than the efficiency of detection of neutron fluxes alone. Thus, an important objective is the creation of detection systems that are both highly efficient in gamma-neutron detection and also capable of exhibiting high gamma suppression for use in the role ofmore » detection of neutron radiation. In this work, we present the results of our experimental and theoretical studies on the detection efficiency of fast neutrons from a {sup 239}Pu-Be source by the heavy oxide scintillators BGO, GSO, CWO and ZWO, as well as ZnSe(Te, O). The most probable mechanism of fast neutron interaction with nuclei of heavy oxide scintillators is the inelastic scattering (n, n'γ) reaction. In our work, fast neutron detection efficiencies were determined by the method of internal counting of gamma-quanta that emerge in the scintillator from (n, n''γ) reactions on scintillator nuclei with the resulting gamma energies of ∼20-300 keV. The measured efficiency of neutron detection for the scintillation crystals we considered was ∼40-50 %. The present work included a detailed analysis of detection efficiency as a function of detector and area of the working surface, as well as a search for new ways to create larger-sized detectors of lower cost. As a result of our studies, we have found an unusual dependence of fast neutron detection efficiency upon thickness of the oxide scintillators. An explanation for this anomaly may involve the competition of two factors that accompany inelastic scattering on the heavy atomic nuclei. The transformation of the energy spectrum of neutrons involved in the (n, n'γ) reactions

The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

PubMed

Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

2007-07-01

Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

Direct imaging detectors for electron microscopy

NASA Astrophysics Data System (ADS)

Faruqi, A. R.; McMullan, G.

2018-01-01

Electronic detectors used for imaging in electron microscopy are reviewed in this paper. Much of the detector technology is based on the developments in microelectronics, which have allowed the design of direct detectors with fine pixels, fast readout and which are sufficiently radiation hard for practical use. Detectors included in this review are hybrid pixel detectors, monolithic active pixel sensors based on CMOS technology and pnCCDs, which share one important feature: they are all direct imaging detectors, relying on directly converting energy in a semiconductor. Traditional methods of recording images in the electron microscope such as film and CCDs, are mentioned briefly along with a more detailed description of direct electronic detectors. Many applications benefit from the use of direct electron detectors and a few examples are mentioned in the text. In recent years one of the most dramatic advances in structural biology has been in the deployment of the new backthinned CMOS direct detectors to attain near-atomic resolution molecular structures with electron cryo-microscopy (cryo-EM). The development of direct detectors, along with a number of other parallel advances, has seen a very significant amount of new information being recorded in the images, which was not previously possible-and this forms the main emphasis of the review.

Performance limiting processes in room temperature thallium bromide radiation detectors

NASA Astrophysics Data System (ADS)

Datta, Amlan; Becla, Piotr; Moed, Demi; Motakef, Shariar

2015-09-01

Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. However, several critical issues are needed to be addressed before deployment of this material for long-term field applications. In this paper, the relevance and, scientific and technological progress made towards solving these challenges for TlBr have been discussed. The possible research pathways to mitigate the concerns related to this material have been analyzed and clearly established. Findings from novel experiments performed at CapeSym have revealed that the most significant factors for achieving long-term performance stability for TlBr devices involve physical and chemical conditions of the surface, residual stress, and choice of metal contacts. Palladium electrodes on TlBr devices resulted in a 20-fold improvement in the device lifetime when compared to its Br-etched Pt counterpart. Electron and hole contributions towards the spectroscopic response of the TlBr detector significantly depend on the interaction position of the incoming radiation and was clearly observed in this study. TlBr device fabrication techniques need significant improvement in order to attain reliable, repeatable, and stable, long-term performance.

A Summary of Lightpipe Radiation Thermometry Research at NIST

PubMed Central

Tsai, Benjamin K.

2006-01-01

During the last 10 years, research in light-pipe radiation thermometry has significantly reduced the uncertainties for temperature measurements in semiconductor processing. The National Institute of Standards and Technology (NIST) has improved the calibration of lightpipe radiation thermometers (LPRTs), the characterization procedures for LPRTs, the in situ calibration of LPRTs using thin-film thermocouple (TFTC) test wafers, and the application of model-based corrections to improve LPRT spectral radiance temperatures. Collaboration with industry on implementing techniques and ideas established at NIST has led to improvements in temperature measurements in semiconductor processing. LPRTs have been successfully calibrated at NIST for rapid thermal processing (RTP) applications using a sodium heat-pipe blackbody between 700 °C and 900 °C with an uncertainty of about 0.3 °C (k = 1) traceable to the International Temperature Scale of 1990. Employing appropriate effective emissivity models, LPRTs have been used to determine the wafer temperature in the NIST RTP Test Bed with an uncertainty of 3.5 °C. Using a TFTC wafer for calibration, the LPRT can measure the wafer temperature in the NIST RTP Test Bed with an uncertainty of 2.3 °C. Collaborations with industry in characterizing and calibrating LPRTs will be summarized, and future directions for LPRT research will be discussed. PMID:27274914

A Summary of Lightpipe Radiation Thermometry Research at NIST.

PubMed

Tsai, Benjamin K

2006-01-01

During the last 10 years, research in light-pipe radiation thermometry has significantly reduced the uncertainties for temperature measurements in semiconductor processing. The National Institute of Standards and Technology (NIST) has improved the calibration of lightpipe radiation thermometers (LPRTs), the characterization procedures for LPRTs, the in situ calibration of LPRTs using thin-film thermocouple (TFTC) test wafers, and the application of model-based corrections to improve LPRT spectral radiance temperatures. Collaboration with industry on implementing techniques and ideas established at NIST has led to improvements in temperature measurements in semiconductor processing. LPRTs have been successfully calibrated at NIST for rapid thermal processing (RTP) applications using a sodium heat-pipe blackbody between 700 °C and 900 °C with an uncertainty of about 0.3 °C (k = 1) traceable to the International Temperature Scale of 1990. Employing appropriate effective emissivity models, LPRTs have been used to determine the wafer temperature in the NIST RTP Test Bed with an uncertainty of 3.5 °C. Using a TFTC wafer for calibration, the LPRT can measure the wafer temperature in the NIST RTP Test Bed with an uncertainty of 2.3 °C. Collaborations with industry in characterizing and calibrating LPRTs will be summarized, and future directions for LPRT research will be discussed.

WE-AB-BRB-12: Nanoscintillator Fiber-Optic Detector System for Microbeam Radiation Therapy Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rivera, J; Dooley, J; Chang, S

2015-06-15

Purpose: Microbeam Radiation Therapy (MRT) is an experimental radiation therapy that has demonstrated a higher therapeutic ratio than conventional radiation therapy in animal studies. There are several roadblocks in translating the promising treatment technology to clinical application, one of which is the lack of a real-time, high-resolution dosimeter. Current clinical radiation detectors have poor spatial resolution and, as such, are unsuitable for measuring microbeams with submillimeter-scale widths. Although GafChromic film has high spatial resolution, it lacks the real-time dosimetry capability necessary for MRT preclinical research and potential clinical use. In this work we have demonstrated the feasibility of using amore » nanoscintillator fiber-optic detector (nanoFOD) system for real-time MRT dosimetry. Methods: A microplanar beam array is generated using a x-ray research irradiator and a custom-made, microbeam-forming collimator. The newest generation nanoFOD has an effective size of 70 µm in the measurement direction and was calibrated against a kV ion chamber (RadCal Accu-Pro) in open field geometry. We have written a computer script that performs automatic data collection with immediate background subtraction. A computer-controlled detector positioning stage is used to precisely measure the microbeam peak dose and beam profile by translating the stage during data collection. We test the new generation nanoFOD system, with increased active scintillation volume, against the previous generation system. Both raw and processed data are time-stamped and recorded to enable future post-processing. Results: The real-time microbeam dosimetry system worked as expected. The new generation dosimeter has approximately double the active volume compared to the previous generation resulting in over 900% increase in signal. The active volume of the dosimeter still provided the spatial resolution that meets the Nyquist criterion for our microbeam widths. Conclusion

Development of an alpha/beta/gamma detector for radiation monitoring

NASA Astrophysics Data System (ADS)

Yamamoto, Seiichi; Hatazawa, Jun

2011-11-01

For radiation monitoring at the site of nuclear power plant accidents such as Fukushima Daiichi, radiation detectors not only for gamma photons but also for alpha and beta particles are needed because some nuclear fission products emit beta particles and gamma photons and some nuclear fuels contain plutonium that emits alpha particles. We developed a radiation detector that can simultaneously monitor alpha and beta particles and gamma photons for radiation monitoring. The detector consists of three-layered scintillators optically coupled to each other and coupled to a photomultiplier tube. The first layer, which is made of a thin plastic scintillator (decay time: 2.4 ns), detects alpha particles. The second layer, which is made of a thin Gd2SiO5 (GSO) scintillator with 1.5 mol.% Ce (decay time: 35 ns), detects beta particles. The third layer made of a thin GSO scintillator with 0.4 mol.% Ce (decay time: 70 ns) detects gamma photons. By using pulse shape discrimination, the count rates of these layers can be separated. With individual irradiation of alpha and beta particles and gamma photons, the count rate of the first layer represented the alpha particles, the second layer represented the beta particles, and the third layer represented the gamma photons. Even with simultaneous irradiation of the alpha and beta particles and the gamma photons, these three types of radiation can be individually monitored using correction for the gamma detection efficiency of the second and third layers. Our developed alpha, beta, and gamma detector is simple and will be useful for radiation monitoring, especially at nuclear power plant accident sites or other applications where the simultaneous measurements of alpha and beta particles and gamma photons are required.

Development of an alpha/beta/gamma detector for radiation monitoring.

PubMed

Yamamoto, Seiichi; Hatazawa, Jun

2011-11-01

For radiation monitoring at the site of nuclear power plant accidents such as Fukushima Daiichi, radiation detectors not only for gamma photons but also for alpha and beta particles are needed because some nuclear fission products emit beta particles and gamma photons and some nuclear fuels contain plutonium that emits alpha particles. We developed a radiation detector that can simultaneously monitor alpha and beta particles and gamma photons for radiation monitoring. The detector consists of three-layered scintillators optically coupled to each other and coupled to a photomultiplier tube. The first layer, which is made of a thin plastic scintillator (decay time: 2.4 ns), detects alpha particles. The second layer, which is made of a thin Gd(2)SiO(5) (GSO) scintillator with 1.5 mol.% Ce (decay time: 35 ns), detects beta particles. The third layer made of a thin GSO scintillator with 0.4 mol.% Ce (decay time: 70 ns) detects gamma photons. By using pulse shape discrimination, the count rates of these layers can be separated. With individual irradiation of alpha and beta particles and gamma photons, the count rate of the first layer represented the alpha particles, the second layer represented the beta particles, and the third layer represented the gamma photons. Even with simultaneous irradiation of the alpha and beta particles and the gamma photons, these three types of radiation can be individually monitored using correction for the gamma detection efficiency of the second and third layers. Our developed alpha, beta, and gamma detector is simple and will be useful for radiation monitoring, especially at nuclear power plant accident sites or other applications where the simultaneous measurements of alpha and beta particles and gamma photons are required. © 2011 American Institute of Physics

Crystal Growth, Characterization and Fabrication of Cadmium Zinc Telluride-based Nuclear Detectors

NASA Astrophysics Data System (ADS)

Krishna, Ramesh M.

In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials such as uranium and plutonium. One of the most promising semiconductor materials being considered to create a convenient, field-deployable nuclear detector is cadmium zinc telluride (CdZnTe, or CZT). CZT is a ternary semiconductor compound which can detect high-energy gamma-rays at room temperature. It offers high resistivity (≥ 1010 O-cm), a high band gap (1.55 eV), and good electron transport properties, all of which are required for a nuclear radiation detector. However, one significant issue with CZT is that there is considerable difficulty in growing large, homogeneous, defect-free single crystals of CZT. This significantly increases the cost of producing CZT detectors, making CZT less than ideal for mass-production. Furthermore, CZT suffers from poor hole transport properties, which creates significant problems when using it as a high-energy gamma-ray detector. In this dissertation, a comprehensive investigation is undertaken using a successful growth method for CZT developed at the University of South Carolina. This method, called the solvent-growth technique, reduces the complexity required to grow detector-grade CZT single crystals. It utilizes a lower growth temperature than traditional growth methods by using Te as a solvent, while maintaining the advantages of

Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung

2016-01-01

The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient tomore » the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.« less

II-VI Narrow-Bandgap Semiconductors for Optoelectronics

NASA Astrophysics Data System (ADS)

Baker, Ian

The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

Vacuum-Ultraviolet Photovoltaic Detector.

PubMed

Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

2018-01-23

Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

Simulations of radiation-damaged 3D detectors for the Super-LHC

NASA Astrophysics Data System (ADS)

Pennicard, D.; Pellegrini, G.; Fleta, C.; Bates, R.; O'Shea, V.; Parkes, C.; Tartoni, N.

2008-07-01

Future high-luminosity colliders, such as the Super-LHC at CERN, will require pixel detectors capable of withstanding extremely high radiation damage. In this article, the performances of various 3D detector structures are simulated with up to 1×1016 1 MeV- neq/cm2 radiation damage. The simulations show that 3D detectors have higher collection efficiency and lower depletion voltages than planar detectors due to their small electrode spacing. When designing a 3D detector with a large pixel size, such as an ATLAS sensor, different electrode column layouts are possible. Using a small number of n+ readout electrodes per pixel leads to higher depletion voltages and lower collection efficiency, due to the larger electrode spacing. Conversely, using more electrodes increases both the insensitive volume occupied by the electrode columns and the capacitive noise. Overall, the best performance after 1×1016 1 MeV- neq/cm2 damage is achieved by using 4-6 n+ electrodes per pixel.

Improved detector for the measurement of gamma radiation

NASA Astrophysics Data System (ADS)

Zelt, F. B.

1985-07-01

The present invention lies in the field of gamma ray spectrometry of geologic deposits and other materials, such as building materials (cement, asphalt, etc.) More specifically, the invention is an improved device for the gamma ray spetcrometery of gelogical deposits as a tool for petroleum exploration, geologic research and monitoring of radio-active materials such as in uranium mill tailings and the like. Improvement consists in enlarging the area of the receptor face and without any necessarily substantial increase in the volume of the receptor crystal over the current cylindrical shapes. The invention also provides, as a corollary of the increase in area receptor crystal face, a reduction in the weight of the amount of material necessary to provide effective shielding of the crystal from atmospheric radiation and radiation from deposits not under examination. The area of the receptor crystal face is increased by forming the crystal as a truncated cone with the shielding shaped as a hollow frustrum of a cone. A photomultiplier device is secured to the smaller face of the crystal. The improved detector shape can also be used in scintillometers which measure total gamma radiation.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sizov, F.; Zabudsky, V.; Petryakov, V.

2015-02-23

In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noisemore » ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.« less

Radiation imaging with optically read out GEM-based detectors

NASA Astrophysics Data System (ADS)

Brunbauer, F. M.; Lupberger, M.; Oliveri, E.; Resnati, F.; Ropelewski, L.; Streli, C.; Thuiner, P.; van Stenis, M.

2018-02-01

Modern imaging sensors allow for high granularity optical readout of radiation detectors such as MicroPattern Gaseous Detectors (MPGDs). Taking advantage of the high signal amplification factors achievable by MPGD technologies such as Gaseous Electron Multipliers (GEMs), highly sensitive detectors can be realised and employing gas mixtures with strong scintillation yield in the visible wavelength regime, optical readout of such detectors can provide high-resolution event representations. Applications from X-ray imaging to fluoroscopy and tomography profit from the good spatial resolution of optical readout and the possibility to obtain images without the need for extensive reconstruction. Sensitivity to low-energy X-rays and energy resolution permit energy resolved imaging and material distinction in X-ray fluorescence measurements. Additionally, the low material budget of gaseous detectors and the possibility to couple scintillation light to imaging sensors via fibres or mirrors makes optically read out GEMs an ideal candidate for beam monitoring detectors in high energy physics as well as radiotherapy. We present applications and achievements of optically read out GEM-based detectors including high spatial resolution imaging and X-ray fluorescence measurements as an alternative readout approach for MPGDs. A detector concept for low intensity applications such as X-ray crystallography, which maximises detection efficiency with a thick conversion region but mitigates parallax-induced broadening is presented and beam monitoring capabilities of optical readout are explored. Augmenting high resolution 2D projections of particle tracks obtained with optical readout with timing information from fast photon detectors or transparent anodes for charge readout, 3D reconstruction of particle trajectories can be performed and permits the realisation of optically read out time projection chambers. Combining readily available high performance imaging sensors with compatible

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shpotyuk, O.; Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru; Shpotyuk, M.

2015-03-15

Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

Infrared response measurements on radiation-damaged Si/Li/ detectors.

NASA Technical Reports Server (NTRS)

Sher, A. H.; Liu, Y. M.; Keery, W. J.

1972-01-01

The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

Resonant metamaterial detectors based on THz quantum-cascade structures

PubMed Central

Benz, A.; Krall, M.; Schwarz, S.; Dietze, D.; Detz, H.; Andrews, A. M.; Schrenk, W.; Strasser, G.; Unterrainer, K.

2014-01-01

We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertical confinement. The metamaterial is processed directly into the top metal contact and is used to couple normal incidence radiation resonantly to the intersubband transitions. The device is capable of detecting light below and above the reststrahlenband of gallium-arsenide corresponding to the mid-infrared and THz spectral region. PMID:24608677

Principal Component Analysis for pulse-shape discrimination of scintillation radiation detectors

NASA Astrophysics Data System (ADS)

Alharbi, T.

2016-01-01

In this paper, we report on the application of Principal Component analysis (PCA) for pulse-shape discrimination (PSD) of scintillation radiation detectors. The details of the method are described and the performance of the method is experimentally examined by discriminating between neutrons and gamma-rays with a liquid scintillation detector in a mixed radiation field. The performance of the method is also compared against that of the conventional charge-comparison method, demonstrating the superior performance of the method particularly at low light output range. PCA analysis has the important advantage of automatic extraction of the pulse-shape characteristics which makes the PSD method directly applicable to various scintillation detectors without the need for the adjustment of a PSD parameter.

Results of neutron irradiation of GEM detector for plasma radiation detection

NASA Astrophysics Data System (ADS)

Jednorog, S.; Bienkowska, B.; Chernyshova, M.; Łaszynska, E.; Prokopowicz, R.; Ziołkowski, A.

2015-09-01

The detecting devices dedicated for plasma monitoring will be exposed for massive fluxes of neutron, photons as well as other rays that are components of fusion reactions and their product interactions with plasma itself or surroundings. In result detecting module metallic components will be activated becoming a source of radiation. Moreover, electronics components could change their electronic properties. The prototype GEM detector constructed for monitoring soft X-ray radiation in ITER oriented tokamaks was used for plasma monitoring during experimental campaign on tokamak ASDEX Upgrade. After that it became a source of gamma radiation caused by neutrons. The present work contains description of detector activation in the laboratory conditions.

A review of advances in pixel detectors for experiments with high rate and radiation

NASA Astrophysics Data System (ADS)

Garcia-Sciveres, Maurice; Wermes, Norbert

2018-06-01

The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

DOEpatents

Majewski, S.; Kross, B.J.; Zorn, C.J.; Majewski, L.A.

1996-10-22

An optimized examination system and method based on the Reverse Geometry X-Ray{trademark} (RGX{trademark}) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging. 5 figs.

Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

DOEpatents

Majewski, Stanislaw; Kross, Brian J.; Zorn, Carl J.; Majewski, Lukasz A.

1996-01-01

An optimized examination system and method based on the Reverse Geometry X-Ray.RTM. (RGX.RTM.) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging.

Surface wave chemical detector using optical radiation

DOEpatents

Thundat, Thomas G.; Warmack, Robert J.

2007-07-17

A surface wave chemical detector comprising at least one surface wave substrate, each of said substrates having a surface wave and at least one measurable surface wave parameter; means for exposing said surface wave substrate to an unknown sample of at least one chemical to be analyzed, said substrate adsorbing said at least one chemical to be sensed if present in said sample; a source of radiation for radiating said surface wave substrate with different wavelengths of said radiation, said surface wave parameter being changed by said adsorbing; and means for recording signals representative of said surface wave parameter of each of said surface wave substrates responsive to said radiation of said different wavelengths, measurable changes of said parameter due to adsorbing said chemical defining a unique signature of a detected chemical.

An Experiment in Radiation Measurement Using the Depron Instrument

NASA Astrophysics Data System (ADS)

Benghin, Victor V.; Nechaev, Oleg Y.; Zolotarev, Ivan A.; Amelyushkin, Alexander M.; Petrov, Vasiliy L.; Panasyuk, Milhail I.; Yashin, Ivan V.

2018-02-01

Most of the radiation measurements have been made onboard spacecraft flying along orbits with an inclination of up to 51.6 degrees. Due to the prospect of manned missions at orbits with larger inclinations, it is advisable to conduct preliminary detailed dosimetry measurements at a high-inclination orbit; due to its polar orbit, the Lomonosov satellite provides good opportunities for such study. We chose a method of cosmic radiation dosimetry based on semiconductor detectors. This method is widely used onboard spacecraft, including full-time radiation monitoring onboard the International Space Station (ISS). It should be noted that not only did the charged particles contribute significantly in the dose equivalent, but also did the neutrons. Semiconductor detectors have low sensitivity to neutron radiation and are not sufficient for detecting the expected flux of neutrons. We add a thermal neutron counter to the proposed device in order to provide an opportunity for estimation of neutron flux variations along the satellite trajectory. Thus, the design of the instrument DEPRON (Dosimeter of Electrons, PROtons and Neutrons) was determined. DEPRON is intended for registration of the absorbed doses and linear energy transfer spectra for high-energy electrons, protons and nuclei of space radiation, as well as registration of thermal neutrons. The present paper provides a brief description of the DEPRON instrument. Its calibration results and the first mission results of background radiation measurements are also presented.

Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors

NASA Astrophysics Data System (ADS)

Burger, Arnold; Chattopadhyay, Kaushik; Chen, Henry; Olivier Ndap, Jean; Ma, Xiaoyan; Trivedi, Sudhir; Kutcher, Susan W.; Chen, Rujin; Rosemeier, Robert D.

1999-03-01

Cadmium manganese telluride (Cd 1- xMn xTe) is a diluted magnetic semiconductor material which forms the basis for many important devices such as IR detectors, solar cells, magnetic field sensors, optical isolators, and visible and near IR lasers. High resistivity (>10 10 Ω cm) and high μ τ (>10 -6 cm 2/V) material, which are the two prerequisites in the fabrication of radiation detectors, has recently been demonstrated at Brimrose Corp. This paper presents the crystal growth of intentionally vanadium doped crystals, the surface preparation and contacting procedure, as well as the best detector performance obtained so far. Dark current characteristics, and low temperature photoluminescence results are also presented and discussed.

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

NASA Technical Reports Server (NTRS)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Recent progress in the transition radiation detector techniques

NASA Technical Reports Server (NTRS)

Yuan, L. C. L.

1973-01-01

A list of some of the major experimental achievements involving charged particles in the relativistic region are presented. With the emphasis mainly directed to the X-ray region, certain modes of application of the transition radiation for the identification and separation of relativistic charged particles are discussed. Some recent developments in detection techniques and improvements in detector performances are presented. Experiments were also carried out to detect the dynamic radiation, but no evidence of such an effect was observed.

Prototypes of self-powered radiation detectors employing intrinsic high-energy current.

PubMed

Zygmanski, Piotr; Shrestha, Suman; Briovio, Davide; Karellas, Andrew; Sajo, Erno

2016-01-01

The authors experimentally investigate the effect of direct energy conversion of x-rays via selfpowered Auger- and photocurrent, potentially suitable to practical radiation detection and dosimetry in medical applications. Experimental results are compared to computational predictions. The detector the authors consider is a thin-film multilayer device, composed of alternating disparate electrically conductive and insulating layers. This paper focuses on the experiments while a companion paper introduces the fundamental concepts of high-energy current (HEC) detectors. The energy of ionizing radiation is directly converted to detector signal via electric current induced by high-energy secondary electrons generated in the detector material by the incident primary radiation. The HEC electrons also ionize the dielectric and the resultant charge carriers are selfcollected due to the contact potential of the disparate electrodes. Thus, an electric current is induced in the conductors in two different ways without the need for externally applied bias voltage or amplification. Thus, generated signal in turn is digitized by a data acquisition system. To determine the fundamental properties of the HEC detector and to demonstrate its feasibility for medical applications, the authors used a planar geometry composed of multilayer microstructures. Various detectors with up to seven conducting layers with different combinations of materials (250 μm Al, 35 μm Cu, 100 μm Pb) and air gaps (100 μm) were exposed to nearly plane-parallel 60-120 kVp x-ray beams. For the experimental design and verification, the authors performed coupled electron-photon radiation transport computations. The detector signal was measured using a commercial data acquisition system with 24 bits dynamic range, 0.4 fC sensitivity, and 0.9 ms sampling time. Measured signals for the prototype detector varied depending on the number of layers, material type, and incident photon energy, and it was in the range

FIBER OPTICS. ACOUSTOOPTICS: Amplification of semiconductor laser radiation in the wavelength range 1.24-1.3 μm by stimulated Raman scattering in an optical fiber

NASA Astrophysics Data System (ADS)

Belotitskiĭ, V. I.; Kuzin, E. A.; Ovsyannikov, D. V.; Petrov, Mikhail P.

1990-07-01

An investigation was made of the influence of weak semiconductor laser radiation on the spectrum of stimulated Raman scattering in a single-mode optical waveguide pumped by a YAG:Nd3+ laser emitting at 1.06 μm. The scattered radiation power increased by a factor exceeding 10 at the semiconductor laser wavelength. A small-signal dynamic gain reached 47 dB. Simultaneous amplification was observed of several modes of multimode semiconductor laser radiation with an intermode spectral interval of 1.3 nm.

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

NASA Technical Reports Server (NTRS)

Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.;

Calibration of solid state nuclear track detectors at high energy ion beams for cosmic radiation measurements: HAMLET results

NASA Astrophysics Data System (ADS)

Szabó, J.; Pálfalvi, J. K.

2012-12-01

The MATROSHKA experiments and the related HAMLET project funded by the European Commission aimed to study the dose burden of the crew working on the International Space Station (ISS). During these experiments a human phantom equipped with several thousands of radiation detectors was exposed to cosmic rays inside and outside the ISS. Besides the measurements realized in Earth orbit, the HAMLET project included also a ground-based program of calibration and intercomparison of the different detectors applied by the participating groups using high-energy ion beams. The Space Dosimetry Group of the Centre for Energy Research (formerly Atomic Energy Research Institute) participated in these experiments with passive solid state nuclear track detectors (SSNTDs). The paper presents the results of the calibration experiments performed in the years 2008-2011 at the Heavy Ion Medical Accelerator (HIMAC) of the National Institute of Radiological Sciences (NIRS), Chiba, Japan. The data obtained serve as update and improvement for the previous calibration curves which are necessary for the evaluation of the SSNTDs exposed in unknown space radiation fields.

Experiences with radiation portal detectors for international rail transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stromswold, David C.; McCormick, Kathleen R.; Todd, Lindsay C.

Radiation detectors monitored trains at two international borders to evaluate the performance of NaI(Tl) and plastic (polyvinyltoluene: PVT) gamma-ray detectors to characterize rail cargo. The detectors included a prototype NaI(Tl) radiation-portal-monitor panel having four large detectors (10-cm × 10-cm × 41-cm) and a PVT panel with a 41 cm × 173 cm × 3.8-cm detector. Spectral data from the NaI(Tl) and PVT detectors were recorded. Of particular emphasis was the identification of naturally occurring radioactive material (NORM) and the resultant frequency of nuisance alarms. For rail monitoring, the difficulty in stopping trains to perform secondary inspection on alarming cars createsmore » a need for reliable identification of NORM during initial screening. Approximately 30 trains were monitored, and the commodities in individual railcars were ascertained from manifest information. At one test site the trains carried inter-modal containers that had been unloaded from ships, and at the other site the trains contained bulk cargo or individual items in boxcars or flatbeds. NORM encountered included potash, liquefied petroleum gas, fireworks, televisions, and clay-based products (e.g., pottery). Analysis of the spectral data included the use of the template-fitting program GADRAS/FitToDB from Sandia National Laboratories. For much of the NORM the NaI(Tl) data produced a correct identification of the radionuclides present in the railcars. The same analysis was also used for PVT data in which the spectral information (no peaks but only gradual spectral changes including Compton edges) was limited. However, the PVT analysis provided correct identification of 40K and 226Ra in many cases.« less

Characterization of a novel two dimensional diode array the "magic plate" as a radiation detector for radiation therapy treatment.

PubMed

Wong, J H D; Fuduli, I; Carolan, M; Petasecca, M; Lerch, M L F; Perevertaylo, V L; Metcalfe, P; Rosenfeld, A B

2012-05-01

Intensity modulated radiation therapy (IMRT) utilizes the technology of multileaf collimators to deliver highly modulated and complex radiation treatment. Dosimetric verification of the IMRT treatment requires the verification of the delivered dose distribution. Two dimensional ion chamber or diode arrays are gaining popularity as a dosimeter of choice due to their real time feedback compared to film dosimetry. This paper describes the characterization of a novel 2D diode array, which has been named the "magic plate" (MP). It was designed to function as a 2D transmission detector as well as a planar detector for dose distribution measurements in a solid water phantom for the dosimetric verification of IMRT treatment delivery. The prototype MP is an 11 × 11 detector array based on thin (50 μm) epitaxial diode technology mounted on a 0.6 mm thick Kapton substrate using a proprietary "drop-in" technology developed by the Centre for Medical Radiation Physics, University of Wollongong. A full characterization of the detector was performed, including radiation damage study, dose per pulse effect, percent depth dose comparison with CC13 ion chamber and build up characteristics with a parallel plane ion chamber measurements, dose linearity, energy response and angular response. Postirradiated magic plate diodes showed a reproducibility of 2.1%. The MP dose per pulse response decreased at higher dose rates while at lower dose rates the MP appears to be dose rate independent. The depth dose measurement of the MP agrees with ion chamber depth dose measurements to within 0.7% while dose linearity was excellent. MP showed angular response dependency due to the anisotropy of the silicon diode with the maximum variation in angular response of 10.8% at gantry angle 180°. Angular dependence was within 3.5% for the gantry angles ± 75°. The field size dependence of the MP at isocenter agrees with ion chamber measurement to within 1.1%. In the beam perturbation study, the

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Pace, Emanuele; Talamonti, Cinzia

2013-12-01

The 9th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD), held in Florence, at Dipartimento di Fisica ed Astronomia on October 9-12, 2012, was aimed at discussing frontier research activities in several application fields as in nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference are tracking performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), radiation effects on semiconductor materials for medical (radiotherapy dosimeters, imaging devices), astrophysics (UV, X- and γ-ray detectors) and environmental applications, microscopic defect analysis of irradiated semiconductor materials and related radiation hardening technologies. On the first day the conference hosted a short course intended to introduce fundamentals in the development of semiconductor detectors for medical applications to graduate and PhD students, post-docs and young researchers, both engineers and physicists. Directors of the School were Prof. Marta Bucciolini of the University of Florence and INFN, Italy and Dr. Carlo Civinini, INFN Firenze, Italy. Emphasis was placed on the underlying physical principles, instrument design, factors affecting performance, and applications in both the clinical and preclinical applications. The School was attended by nearly 40 students/ young researchers. We warmly thank the Directors for organizing this interesting event and the professors and researchers who gave lessons, for sharing their experience and knowledge with the students.

Window for radiation detectors and the like

DOEpatents

Sparks, C.J. Jr.; Ogle, J.C.

1975-10-28

An improved x- and gamma-radiation and particle transparent window for the environment-controlling enclosure of various types of radiation and particle detectors is provided by a special graphite foil of a thickness of from about 0.1 to 1 mil. The graphite must have very parallel hexagonal planes with a mosaic spread no greater than 5$sup 0$ to have the necessary strength in thin sections to support one atmosphere or more of pressure. Such graphite is formed by hot- pressing and annealing pyrolytically deposited graphite and thereafter stripping off layers of sufficient thickness to form the window.

Radiative d–d transitions at tungsten centers in II–VI semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ushakov, V. V., E-mail: ushakov@lebedev.ru; Krivobok, V. S.; Pruchkina, A. A.

2017-03-15

The luminescence spectra of W impurity centers in II–VI semiconductors, specifically, ZnSe, CdS, and CdSe, are studied. It is found that, if the electron system of 5d (W) centers is considered instead of the electron system of 3d (Cr) centers, the spectral characteristics of the impurity radiation are substantially changed. The electron transitions are identified in accordance with Tanabe–Sugano diagrams of crystal field theory. With consideration for the specific features of the spectra, it is established that, in the crystals under study, radiative transitions at 5d W centers occur between levels with different spins in the region of a weakmore » crystal field.« less

The transition radiation detector of the PAMELA space mission

NASA Astrophysics Data System (ADS)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; de Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2004-04-01

PAMELA space mission objective is to flight a satellite-borne magnetic spectrometer built to fulfill the primary scientific goals of detecting antiparticles (antiprotons and positrons) and to measure spectra of particles in cosmic rays. The PAMELA telescope is composed of: a silicon tracker housed in a permanent magnet, a time-of-flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD is composed of nine sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD characteristics will be described along with its performances studied at both CERN-PS and CERN-SPS facilities, using electrons, pions, muons and protons of different momenta.

Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

DOEpatents

Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.

2004-04-27

A radiation detector system includes detectors having different properties (sensitivity, energy resolution) which are combined so that excellent spectral information may be obtained along with good determinations of the radiation field as a function of position.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Thermovoltaic semiconductor device including a plasma filter

DOEpatents

Baldasaro, Paul F.

1999-01-01

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Temperature characteristics of the radiation detector using TlBr crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shoji, T.; Hitomi, K.; Muroi, O.

1999-12-01

The radiation detector was fabricated from the TlBr crystals grown by TMZ (traveling molten zone) method and the FWHM and transit time of electrons and holes were measured as a function of temperature. The TlBr radiation detector shows the best response characteristics at about 313 K (3.19K{sup {sm{underscore}bullet}1}) in cases where holes mainly contributed to the output pulses. However, in the temperatures higher than 300 K (2.22 K{sup {sm{underscore}bullet}1}), the FWHM for {sup 241}Am {alpha}-particles (5.498 MeV) becomes worse. An activation energy of about 0.90eV has been deduced from the resistivity measurement.

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

Experiences with radiation portal detectors for international rail transport

NASA Astrophysics Data System (ADS)

Stromswold, D. C.; McCormick, K.; Todd, L.; Ashbaker, E. D.; Evans, J. C.

2006-08-01

Radiation detectors monitored trains at two international borders to evaluate the performance of NaI(Tl) and plastic (polyvinyltoluene: PVT) gamma-ray detectors to characterize rail cargo. The detectors included a prototype NaI(Tl) radiation-portal-monitor panel having four large detectors (10-cm × 10-cm × 41-cm) and a PVT panel with a 41 cm × 173 cm × 3.8-cm detector. Spectral data from the NaI(Tl) and PVT detectors were recorded. Of particular emphasis was the identification of naturally occurring radioactive material (NORM) and the resultant frequency of nuisance alarms. For rail monitoring, the difficulty in stopping trains to perform secondary inspection on alarming cars creates a need for reliable identification of NORM during initial screening. Approximately 30 trains were monitored, and the commodities in individual railcars were ascertained from manifest information. At one test site, the trains carried inter-modal containers that had been unloaded from ships, and at the other site, the trains contained bulk cargo in tanker cars and hopper cars or individual items in boxcars or flatbeds. NORM encountered included potash, liquefied petroleum gas, fireworks, televisions, and clay-based products (e.g., pottery). Analysis of the spectral data included the use of the template-fitting portion of the program GADRAS developed at Sandia National Laboratories. For most of the NORM, the NaI(Tl) data produced a correct identification of the radionuclides present in the railcars. The same analysis was also used for PVT data in which the spectral information (no peaks but only gradual spectral changes including Compton edges) was limited. However, the PVT analysis provided correct identification of 40K and 226Ra in many cases.

High-resolution CdTe detectors with application to various fields (Conference Presentation)

NASA Astrophysics Data System (ADS)

Takeda, Shin'ichiro; Orita, Tadashi; Arai, Yasuo; Sugawara, Hirotaka; Tomaru, Ryota; Katsuragawa, Miho; Sato, Goro; Watanabe, Shin; Ikeda, Hirokazu; Takahashi, Tadayuki; Furenlid, Lars R.; Barber, H. Bradford

2016-10-01

High-quality CdTe semiconductor detectors with both fine position resolution and high energy resolution hold great promise to improve measurement in various hard X-ray and gamma-ray imaging fields. ISAS/JAXA has been developing CdTe imaging detectors to meet scientific demands in latest celestial observation and severe environmental limitation (power consumption, vibration, radiation) in space for over 15 years. The energy resolution of imaging detectors with a CdTe Schottky diode of In/CdTe/Pt or Al/CdTe/Pt contact is a highlight of our development. We can extremely reduce a leakage current of devises, meaning it allows us to supply higher bias voltage to collect charges. The 3.2cm-wide and 0.75mm-thick CdTe double-sided strip detector with a strip pitch of 250 µm has been successfully established and was mounted in the latest Japanese X-ray satellite. The energy resolution measured in the test on ground was 2.1 keV (FWHM) at 59.5 keV. The detector with much finer resolution of 60 µm is ready, and it was actually used in the FOXSI rocket mission to observe hard X-ray from the sun. In this talk, we will focus on our research activities to apply space sensor technologies to such various imaging fields as medical imaging. Recent development of CdTe detectors, imaging module with pinhole and coded-mask collimators, and experimental study of response to hard X-rays and gamma-rays are presented. The talk also includes research of the Compton camera which has a configuration of accumulated Si and CdTe imaging detectors.

Particle Detectors

NASA Astrophysics Data System (ADS)

Grupen, Claus; Shwartz, Boris

2011-09-01

Preface to the first edition; Preface to the second edition; Introduction; 1. Interactions of particles and radiation with matter; 2. Characteristic properties of detectors; 3. Units of radiation measurements and radiation sources; 4. Accelerators; 5. Main physical phenomena used for particle detection and basic counter types; 6. Historical track detectors; 7. Track detectors; 8. Calorimetry; 9. Particle identification; 10. Neutrino detectors; 11. Momentum measurement and muon detection; 12. Ageing and radiation effects; 13. Example of a general-purpose detector: Belle; 14. Electronics; 15. Data analysis; 16. Applications of particle detectors outside particle physics; 17. Glossary; 18. Solutions; 19. Resumé; Appendixes; Index.

The ALICE Transition Radiation Detector: Construction, operation, and performance

NASA Astrophysics Data System (ADS)

Alice Collaboration

2018-02-01

The Transition Radiation Detector (TRD) was designed and built to enhance the capabilities of the ALICE detector at the Large Hadron Collider (LHC). While aimed at providing electron identification and triggering, the TRD also contributes significantly to the track reconstruction and calibration in the central barrel of ALICE. In this paper the design, construction, operation, and performance of this detector are discussed. A pion rejection factor of up to 410 is achieved at a momentum of 1 GeV/ c in p-Pb collisions and the resolution at high transverse momentum improves by about 40% when including the TRD information in track reconstruction. The triggering capability is demonstrated both for jet, light nuclei, and electron selection.

SPECT detectors: the Anger Camera and beyond

PubMed Central

Peterson, Todd E.; Furenlid, Lars R.

2011-01-01

The development of radiation detectors capable of delivering spatial information about gamma-ray interactions was one of the key enabling technologies for nuclear medicine imaging and, eventually, single-photon emission computed tomography (SPECT). The continuous NaI(Tl) scintillator crystal coupled to an array of photomultiplier tubes, almost universally referred to as the Anger Camera after its inventor, has long been the dominant SPECT detector system. Nevertheless, many alternative materials and configurations have been investigated over the years. Technological advances as well as the emerging importance of specialized applications, such as cardiac and preclinical imaging, have spurred innovation such that alternatives to the Anger Camera are now part of commercial imaging systems. Increased computing power has made it practical to apply advanced signal processing and estimation schemes to make better use of the information contained in the detector signals. In this review we discuss the key performance properties of SPECT detectors and survey developments in both scintillator and semiconductor detectors and their readouts with an eye toward some of the practical issues at least in part responsible for the continuing prevalence of the Anger Camera in the clinic. PMID:21828904

Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

NASA Technical Reports Server (NTRS)

Hanna, W. A.; Panagos, P.

1983-01-01

This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

Nano structural anodes for radiation detectors

DOEpatents

Cordaro, Joseph V.; Serkiz, Steven M.; McWhorter, Christopher S.; Sexton, Lindsay T.; Retterer, Scott T.

2015-07-07

Anodes for proportional radiation counters and a process of making the anodes is provided. The nano-sized anodes when present within an anode array provide: significantly higher detection efficiencies due to the inherently higher electric field, are amenable to miniaturization, have low power requirements, and exhibit a small electromagnetic field signal. The nano-sized anodes with the incorporation of neutron absorbing elements (e.g., .sup.10B) allow the use of neutron detectors that do not use .sup.3He.

DFT Studies of Semiconductor and Scintillator Detection Materials

NASA Astrophysics Data System (ADS)

Biswas, Koushik

2013-03-01

Efficient radiation detection technology is dependent upon the development of new semiconductor and scintillator materials with advanced capabilities. First-principles based approaches can provide vital information about the structural, electrical, optical and defect properties that will help develop new materials. In addition to the predictive power of modern density functional methods, these techniques can be used to establish trends in properties that may lead to identifying new materials with optimum properties. We will discuss the properties of materials that are of current interest both in the field of scintillators and room temperature semiconductor detectors. In case of semiconductors, binary compounds such as TlBr, InI, CdTe and recently developed ternary chalcohalide Tl6SeI4 will be discussed. Tl6SeI4 mixes a halide (TlI) with a chalcogenide (Tl2Se), which results in an intermediate band gap (1.86 eV) between that of TlI (2.75 eV) and Tl2Se (0.6 eV). For scintillators, we will discuss the case of the elpasolite compounds whose rich chemical compositions should enable the fine-tuning of the band gap and band edges to achieve high light yield and fast scintillation response.

Application of AXUV diode detectors at ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

2014-03-01

In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

The iQID Camera: An Ionizing-Radiation Quantum Imaging Detector

DOE PAGES

Miller, Brian W.; Gregory, Stephanie J.; Fuller, Erin S.; ...

2014-06-11

We have developed and tested a novel, ionizing-radiation Quantum Imaging Detector (iQID). This scintillation-based detector was originally developed as a high-resolution gamma-ray imager, called BazookaSPECT, for use in single-photon emission computed tomography (SPECT). Recently, we have investigated the detectors response and imaging potential with other forms of ionizing radiation including alpha, neutron, beta, and fission fragment particles. The detector’s response to a broad range of ionizing radiation has prompted its new title. The principle operation of the iQID camera involves coupling a scintillator to an image intensifier. The scintillation light generated particle interactions is optically amplified by the intensifier andmore » then re-imaged onto a CCD/CMOS camera sensor. The intensifier provides sufficient optical gain that practically any CCD/CMOS camera can be used to image ionizing radiation. Individual particles are identified and their spatial position (to sub-pixel accuracy) and energy are estimated on an event-by-event basis in real time using image analysis algorithms on high-performance graphics processing hardware. Distinguishing features of the iQID camera include portability, large active areas, high sensitivity, and high spatial resolution (tens of microns). Although modest, iQID has energy resolution that is sufficient to discrimate between particles. Additionally, spatial features of individual events can be used for particle discrimination. An important iQID imaging application that has recently been developed is single-particle, real-time digital autoradiography. In conclusion, we present the latest results and discuss potential applications.« less

The ALICE Transition Radiation Detector: Construction, operation, and performance

DOE PAGES

Acharya, S; Adam, J; Adamova, D; ...

2017-09-21

The Transition Radiation Detector (TRD) was designed and built to enhance the capabilities of the ALICE detector at the Large Hadron Collider (LHC). While aimed at providing electron identification and triggering, the TRD also contributes significantly to the track reconstruction and calibration in the central barrel of ALICE. In this article, the design, construction, operation, and performance of this detector are discussed. A pion rejection factor of up to 410 is achieved at a momentum of 1 GeV/c in p-Pb collisions and the resolution at high transverse momentum improves by about 40% when including the TRD information in track reconstruction.more » The triggering capability is demonstrated both for jet, light nuclei, and electron selection.« less

The ALICE Transition Radiation Detector: Construction, operation, and performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Acharya, S; Adam, J; Adamova, D

The Transition Radiation Detector (TRD) was designed and built to enhance the capabilities of the ALICE detector at the Large Hadron Collider (LHC). While aimed at providing electron identification and triggering, the TRD also contributes significantly to the track reconstruction and calibration in the central barrel of ALICE. In this article, the design, construction, operation, and performance of this detector are discussed. A pion rejection factor of up to 410 is achieved at a momentum of 1 GeV/c in p-Pb collisions and the resolution at high transverse momentum improves by about 40% when including the TRD information in track reconstruction.more » The triggering capability is demonstrated both for jet, light nuclei, and electron selection.« less

Inpainting approaches to fill in detector gaps in phase contrast computed tomography

NASA Astrophysics Data System (ADS)

Brun, F.; Delogu, P.; Longo, R.; Dreossi, D.; Rigon, L.

2018-01-01

Photon counting semiconductor detectors in radiation imaging present attractive properties, such as high efficiency, low noise, and energy sensitivity. The very complex electronics limits the sensitive area of current devices to a few square cm. This disadvantage is often compensated by tiling a larger matrix with an adequate number of detector units but this usually results in non-negligible insensitive gaps between two adjacent modules. When considering the case of Computed Tomography (CT), these gaps lead to degraded reconstructed images with severe streak and ring artifacts. This work presents two digital image processing solutions to fill in these gaps when considering the specific case of synchrotron radiation x-ray parallel beam phase contrast CT. While not discussed with experimental data, other CT modalities, such as spectral, cone beam and other geometries might benefit from the presented approaches.

Stimulation research on the measurement of the IRW pneumatic thermal radiation

NASA Astrophysics Data System (ADS)

Wei, Yifang; Liu, Xiaohua; Liu, Ming; Dong, Liquan; Zhao, Yuejin

2018-01-01

When an aircraft flies at a hypersonic speed within the atmosphere, the temperature of the infrared window (IRW) on the aircraft will rise rapidly due to the high-speed incoming flow will produce a severe aerodynamic heating to its optical detection window. The infrared (IR) radiation of the high-temperature gas and optical window will generate severe pneumatic thermal radiation effect upon the detection system, with the performance of the IR detector possibly being reduced or even destroyed. To evaluate the influence on the target imaging made by the IRW radiation, the experiment on the basis of building a simulating model is conducted by the means of ray tracing so that the accurate transmittance of the IRW can be observed under the different temperature. And then the radiation distribution of the thermal radiation on the detector generated by the IRW radiation noise and target signal can finally be obtained. This paper also records the different parameters in the detection system being set in the experiment, and analyzes the different influences brought by various factors to the Signal to Noise Ratio (SNR). It is also expected that it will provide a data reference to the following research of radiation noise suppression and design of IR detection system.

Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

NASA Technical Reports Server (NTRS)

Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

1986-01-01

Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

High-efficiency scintillation detector for combined of thermal and fast neutrons and gamma radiation

DOEpatents

Chiles, Marion M.; Mihalczo, John T.; Blakeman, Edward D.

1989-02-07

A scintillation based radiation detector for the combined detection of thermal neutrons, high-energy neutrons and gamma rays in a single detecting unit. The detector consists of a pair of scintillators sandwiched together and optically coupled to the light sensitive face of a photomultiplier tube. A light tight radiation pervious housing is disposed about the scintillators and a portion of the photomultiplier tube to hold the arrangement in assembly and provides a radiation window adjacent the outer scintillator through which the radiation to be detected enters the detector. The outer scintillator is formed of a material in which scintillations are produced by thermal-neutrons and the inner scintillator is formed of a material in which scintillations are produced by high-energy neutrons and gamma rays. The light pulses produced by events detected in both scintillators are coupled to the photomultiplier tube which produces a current pulse in response to each detected event. These current pulses may be processed in a conventional manner to produce a count rate output indicative of the total detected radiation even count rate. Pulse discrimination techniques may be used to distinguish the different radiations and their energy distribution.

High-efficiency scintillation detector for combined of thermal and fast neutrons and gamma radiation

DOEpatents

Chiles, Marion M.; Mihalczo, John T.; Blakeman, Edward D.

1989-01-01

A scintillation based radiation detector for the combined detection of thermal neutrons, high-energy neutrons and gamma rays in a single detecting unit. The detector consists of a pair of scintillators sandwiched together and optically coupled to the light sensitive face of a photomultiplier tube. A light tight radiation pervious housing is disposed about the scintillators and a portion of the photomultiplier tube to hold the arrangement in assembly and provides a radiation window adjacent the outer scintillator through which the radiation to be detected enters the detector. The outer scintillator is formed of a material in which scintillations are produced by thermal-neutrons and the inner scintillator is formed of a material in which scintillations are produced by high-energy neutrons and gamma rays. The light pulses produced by events detected in both scintillators are coupled to the photomultiplier tube which produces a current pulse in response to each detected event. These current pulses may be processed in a conventional manner to produce a count rate output indicative of the total detected radiation even count rate. Pulse discrimination techniques may be used to distinguish the different radiations and their energy distribution.

Status of diamond particle detectors

NASA Astrophysics Data System (ADS)

Krammer, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fish, D.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Manfredi, P. F.; Meier, D.; Mishina, M.; LeNormand, F.; Pan, L. S.; Pernegger, H.; Pernicka, M.; Re, V.; Riester, G. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

1998-11-01

To continue the exciting research in the field of particle physics new accelerators and experiments are under construction. In some of these experiments, e.g. ATLAS and CMS at the Large Hadron Collider at CERN or HERA-B at DESY, the detectors have to withstand an extreme environment. The detectors must be radiation hard, provide a very fast signal, and be as thin as possible. The properties of CVD diamond allow to fulfill these requirements and make it an ideal material for the detectors close to the interaction region of these experiments, i.e. the vertex detectors or the inner trackers. The RD42 collaboration is developing diamond detectors for these applications. The program of RD42 includes the improvement of the charge collection properties of CVD diamond, the study of the radiation hardness and the development of low-noise radiation hard readout electronics. An overview of the progress achieved during the last years will be given.

Photon detector configured to employ the Gunn effect and method of use

DOEpatents

Cich, Michael J

2015-03-17

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

NASA Astrophysics Data System (ADS)

Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

2018-03-01

The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

Radiation Response of Emerging High Gain, Low Noise Detectors

NASA Technical Reports Server (NTRS)

Becker, Heidi N.; Farr, William H; Zhu, David Q.

2007-01-01

Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.

Dual-Mode Nuclear Radiation Particle Detector

NASA Astrophysics Data System (ADS)

Zhang, Yali

The design and fabrication of a "dual-mode" nuclear radiation detector using planar silicon technology is described. The device operates at 0.3 K and detects simultaneously the ionization and the phonons produced by nuclear radiation interacting in the substrate. The intended purpose of the device is to detect atomic silicon recoils from the scattering of massive neutral particles that are hypothesized to compose the dark matter halo of our galaxy. The "dual mode" functionality was designed to permit atomic recoils to be distinguished event-by-event from the background due to unavoidable low-level radioactivity in the detector and its surroundings. The device consists of a back contact biased negatively relative to a comb-shaped electrode structure on the opposite face of a high purity wafer. The spacing of the comb teeth is less than the wafer thickness, providing a uniform charge collection electric field throughout most of the wafer volume. Between the teeth of the comb are superconducting transition edge devices consisting of serpentines of 400 A thick, 2 μm wide Ti lines separated by 3 μm spaces. Investigations of ionization-detecting metal-on -silicon contacts at low temperatures are described, including diffused junctions, Au on Si, Au on oxidized Si, and Ti on Si. Diode characteristics continue to change qualitatively at temperatures below 4 K. The destruction of superconductivity in Ti by Au contamination during microfabrication procedures is also reported.

Pixel detectors for use in retina neurophysiology studies

NASA Astrophysics Data System (ADS)

Cunningham, W.; Mathieson, K.; Horn, M.; Melone, J.; McEwan, F. A.; Blue, A.; O'Shea, V.; Smith, K. M.; Litke, A.; Chichilnisky, E. J.; Rahman, M.

2003-08-01

One area of major inter-disciplinary co-operation is between the particle physics and bio-medical communities. The type of large detector arrays and fast electronics developed in laboratories like CERN are becoming used for a wide range of medical and biological experiments. In the present work fabrication technology developed for producing semiconductor radiation detectors has been applied to produce arrays which have been used in neuro-physiological experiments on retinal tissue. We have exploited UVIII, a low molecular weight resist, that has permitted large area electron beam lithography. This allows the resolution to go below that of conventional photolithography and hence the production of densely packed ˜500 electrode arrays with feature sizes down to below 2 μm. The neural signals from significant areas of the retina may thus be captured.

A novel pixellated solid-state photon detector for enhancing the Everhart-Thornley detector.

PubMed

Chuah, Joon Huang; Holburn, David

2013-06-01

This article presents a pixellated solid-state photon detector designed specifically to improve certain aspects of the existing Everhart-Thornley detector. The photon detector was constructed and fabricated in an Austriamicrosystems 0.35 µm complementary metal-oxide-semiconductor process technology. This integrated circuit consists of an array of high-responsivity photodiodes coupled to corresponding low-noise transimpedance amplifiers, a selector-combiner circuit and a variable-gain postamplifier. Simulated and experimental results show that the photon detector can achieve a maximum transimpedance gain of 170 dBΩ and minimum bandwidth of 3.6 MHz. It is able to detect signals with optical power as low as 10 nW and produces a minimum signal-to-noise ratio (SNR) of 24 dB regardless of gain configuration. The detector has been proven to be able to effectively select and combine signals from different pixels. The key advantages of this detector are smaller dimensions, higher cost effectiveness, lower voltage and power requirements and better integration. The photon detector supports pixel-selection configurability which may improve overall SNR and also potentially generate images for different analyses. This work has contributed to the future research of system-level integration of a pixellated solid-state detector for secondary electron detection in the scanning electron microscope. Copyright © 2013 Wiley Periodicals, Inc.

Continued development of room temperature semiconductor nuclear detectors

NASA Astrophysics Data System (ADS)

Kim, Hadong; Cirignano, Leonard; Churilov, Alexei; Ciampi, Guido; Kargar, Alireza; Higgins, William; O'Dougherty, Patrick; Kim, Suyoung; Squillante, Michael R.; Shah, Kanai

2010-08-01

Thallium bromide (TlBr) and related ternary compounds, TlBrI and TlBrCl, have been under development for room temperature gamma ray spectroscopy due to several promising properties. Due to recent advances in material processing, electron mobility-lifetime product of TlBr is close to Cd(Zn)Te's value which allowed us to fabricate large working detectors. We were also able to fabricate and obtain spectroscopic results from TlBr Capacitive Frisch Grid detector and orthogonal strip detectors. In this paper we report on our recent TlBr and related ternary detector results and preliminary results from Cinnabar (HgS) detectors.

The stability of TlBr detectors at low temperature

NASA Astrophysics Data System (ADS)

Dönmez, Burçin; He, Zhong; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.

2010-11-01

Thallium bromide (TlBr) is a promising semiconductor detector material due to its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm 3) and wide band gap (2.68 eV). Current TlBr detectors suffer from polarization, which causes performance degradation over time when high voltage is applied. A 4.6-mm thick TlBr detector with pixellated anodes made by Radiation Monitoring Devices Inc. was used in the experiments. The detector has a planar cathode and nine anode pixels surrounded by a guard ring. The pixel pitch is 1.0-mm. Digital pulse waveforms of preamplifier outputs were recorded using a multi-channel GaGe PCI digitizer board for pulse shaping. Several experiments were carried out at -20 °C while the detector was under bias for over a month. No polarization effect was observed and the detector's spectroscopic performance improved over time. Energy resolution of 1.5% FWHM at 662 keV has been measured without depth correction at -2000 V cathode bias. Average electron mobility-lifetime of (5.7±0.8) ×10 -3 cm 2/V has been measured from four anode pixels.

Dosimetric evaluation of a MOSFET detector for clinical application in photon therapy.

PubMed

Kohno, Ryosuke; Hirano, Eriko; Nishio, Teiji; Miyagishi, Tomoko; Goka, Tomonori; Kawashima, Mitsuhiko; Ogino, Takashi

2008-01-01

Dosimetric characteristics of a metal oxide-silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.

X-Ray Detector Research at MSFC for Space Applications

NASA Technical Reports Server (NTRS)

Gaskin, Jessica

2006-01-01

NASA's Vision for Space Exploration has specific goals aimed at exploring the Solar System. This vision, under presidential mandate includes landing humans on the moon before the end of the next decade, paving the way for eventual journeys to Mars and beyond. The first missions to the moon will be in the form of both Orbiters and Landers, with the goal of paving the way for human return. One of the instruments we are currently working on,in collaboration with Brookhaven National Laboratory, is a lunar orbiter fluorescent x-ray spectrometer to finely map the light elements (down to Carbon) on surface of the moon. Funded NASA s Planetary Instrument Definition and Development Program the instrument is based on silicon drift detector arrays read out by custom ASICs. These offer the promise of high spectral resolution, necessary for resolving weak lines against a strong background continuum, and very low power requirements, necessary for large areas (greater than 500 square centimeters) required for future lunar missions. Further, the inherent radiation hardness of these detectors makes them ideal candidates for exploring the Jovian system, where the harsh radiation environment from Jupiter s radiation belts creates unfavorable detector conditions. Looking beyond our solar system, in the hard x-ray regime (20-80keV.), we are studying Cadmium-Zinc-Telluride pixilated detectors as feasible candidates for focal plane detectors of a hard x-ray telescope. This energy region bridges the gap between thermal and non-thermal x-ray emission from astronomical sources, will allow us to better understand supernovae nucleosynthesis (such as through the Ti-44 lines at 68keV and 78keV), Active Galactic Nuclei and other compact objects, more completely. The detectors that we are characterizing are 2mm in thickness and are pixilated with a 16x16 array of 300 micrometer pitch pixels (50micometer gap). These detectors are designed at Rutherford Appleton Laboratory, material is from e

A new PET scanner with semiconductor detectors enables better identification of intratumoral inhomogeneity.

PubMed

Shiga, Tohru; Morimoto, Yuichi; Kubo, Naoki; Katoh, Norio; Katoh, Chietsugu; Takeuchi, Wataru; Usui, Reiko; Hirata, Kenji; Kojima, Shinichi; Umegaki, Kikuo; Shirato, Hiroki; Tamaki, Nagara

2009-01-01

An autoradiography method revealed intratumoral inhomogeneity in various solid tumors. It is becoming increasingly important to estimate intratumoral inhomogeneity. However, with low spatial resolution and high scatter noise, it is difficult to detect intratumoral inhomogeneity in clinical settings. We developed a new PET system with CdTe semiconductor detectors to provide images with high spatial resolution and low scatter noise. Both phantom images and patients' images were analyzed to evaluate intratumoral inhomogeneity. This study was performed with a cold spot phantom that had 6-mm-diameter cold sphenoid defects, a dual-cylinder phantom with an adjusted concentration of 1:2, and an "H"-shaped hot phantom. These were surrounded with water. Phantom images and (18)F-FDG PET images of patients with nasopharyngeal cancer were compared with conventional bismuth germanate PET images. Profile curves for the phantoms were measured as peak-to-valley ratios to define contrast. Intratumoral inhomogeneity and tumor edge sharpness were evaluated on the images of the patients. The contrast obtained with the semiconductor PET scanner (1.53) was 28% higher than that obtained with the conventional scanner (1.20) for the 6-mm-diameter cold sphenoid phantom. The contrast obtained with the semiconductor PET scanner (1.43) was 27% higher than that obtained with the conventional scanner (1.13) for the dual-cylinder phantom. Similarly, the 2-mm cold region between 1-mm hot rods was identified only by the new PET scanner and not by the conventional scanner. The new PET scanner identified intratumoral inhomogeneity in more detail than the conventional scanner in 6 of 10 patients. The tumor edge was sharper on the images obtained with the new PET scanner than on those obtained with the conventional scanner. These phantom and clinical studies suggested that this new PET scanner has the potential for better identification of intratumoral inhomogeneity, probably because of its high spatial

High-energy proton radiation damage of high-purity germanium detectors

NASA Technical Reports Server (NTRS)

Pehl, R. H.; Varnell, L. S.; Metzger, A. E.

1978-01-01

Quantitative studies of radiation damage in high-purity germanium gamma-ray detectors due to high-energy charged particles have been carried out; two 1.0 cm thick planar detectors were irradiated by 6 GeV/c protons. Under proton bombardment, degradation in the energy resolution was found to begin below 7 x 10 to the 7th protons/sq cm and increased proportionately in both detectors until the experiment was terminated at a total flux of 5.7 x 10 to the 8th protons/sq cm, equivalent to about a six year exposure to cosmic-ray protons in space. At the end of the irradiation, the FWHM resolution measured at 1332 keV stood at 8.5 and 13.6 keV, with both detectors of only marginal utility as a spectrometer due to the severe tailing caused by charge trapping. Annealing these detectors after proton damage was found to be much easier than after neutron damage.

Room temperature aluminum antimonide radiation detector and methods thereof

DOEpatents

Lordi, Vincenzo; Wu, Kuang Jen J.; Aberg, Daniel; Erhart, Paul; Coombs, III, Arthur W; Sturm, Benjamin W

2015-03-03

In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

A history of radiation detection instrumentation.

PubMed

Frame, Paul W

2004-08-01

A review is presented of the history of radiation detection instrumentation. Specific radiation detection systems that are discussed include the human senses, photography, calorimetry, color dosimetry, ion chambers, electrometers, electroscopes, proportional counters, Geiger Mueller counters, scalers and rate meters, barium platinocyanide, scintillation counters, semiconductor detectors, radiophotoluminescent dosimeters, thermoluminescent dosimeters, optically stimulated luminescent dosimeters, direct ion storage, electrets, cloud chambers, bubble chambers, and bubble dosimeters. Given the broad scope of this review, the coverage is limited to a few key events in the development of a given detection system and some relevant operating principles. The occasional anecdote is included for interest.

A history of radiation detection instrumentation.

PubMed

Frame, Paul W

2005-06-01

A review is presented of the history of radiation detection instrumentation. Specific radiation detection systems that are discussed include the human senses, photography, calorimetry, color dosimetry, ion chambers, electrometers, electroscopes, proportional counters, Geiger Mueller counters, scalers and rate meters, barium platinocyanide, scintillation counters, semiconductor detectors, radiophotoluminescent dosimeters, thermoluminescent dosimeters, optically stimulated luminescent dosimeters, direct ion storage, electrets, cloud chambers, bubble chambers, and bubble dosimeters. Given the broad scope of this review, the coverage is limited to a few key events in the development of a given detection system and some relevant operating principles. The occasional anecdote is included for interest.

MOSFET assessment of radiation dose delivered to mice using the Small Animal Radiation Research Platform (SARRP).

PubMed

Ngwa, Wilfred; Korideck, Houari; Chin, Lee M; Makrigiorgos, G Mike; Berbeco, Ross I

2011-12-01

The Small Animal Radiation Research Platform (SARRP) is a novel isocentric irradiation system that enables state-of-the-art image-guided radiotherapy research to be performed with animal models. This paper reports the results obtained from investigations assessing the radiation dose delivered by the SARRP to different anatomical target volumes in mice. Surgically implanted metal oxide semiconductor field effect transistors (MOSFET) dosimeters were employed for the dose assessment. The results reveal differences between the calculated and measured dose of -3.5 to 0.5%, -5.2 to -0.7%, -3.9 to 0.5%, -5.9 to 2.5%, -5.5 to 0.5%, and -4.3 to 0% for the left kidney, liver, pancreas, prostate, left lung, and brain, respectively. Overall, the findings show less than 6% difference between the delivered and calculated dose, without tissue heterogeneity corrections. These results provide a useful assessment of the need for tissue heterogeneity corrections in SARRP dose calculations for clinically relevant tumor model sites.

Delay-Line Three-Dimensional Position Sensitive Radiation Detection

NASA Astrophysics Data System (ADS)

Jeong, Manhee

High-resistivity silicon(Si) in large volumes and with good charge carrier transport properties has been produced and achieved success as a radiation detector material over the past few years due to its relatively low cost as well as the availability of well-established processing technologies. One application of that technology is in the fabrication of various position-sensing topologies from which the incident radiation's direction can be determined. We have succeeded in developing the modeling tools for investigating different position-sensing schemes and used those tools to examine both amplitude-based and time-based methods, an assessment that indicates that fine position-sensing can be achieved with simpler readout designs than are conventionally deployed. This realization can make ubiquitous and inexpensive deployment of special nuclear materials (SNM) detecting technology becomes more feasible because if one can deploy position-sensitive semiconductor detectors with only one or two contacts per side. For this purpose, we have described the delay-line radiation detector and its optimized fabrication. The semiconductor physics were simulated, the results from which guided the fabrication of the guard ring structure and the detector electrode, both of which included metal-field-plates. The measured improvement in the leakage current was confirmed with the fabricated devices, and the structures successfully suppressed soft-breakdown. We also demonstrated that fabricating an asymmetric strip-line structure successfully minimizing the pulse shaping and increases the distance through which one can propagate the information of the deposited charge distribution. With fabricated delay-line detectors we can acquire alpha spectra (Am-241) and gamma spectra (Ba-133, Co-57 and Cd-109). The delay-line detectors can therefore be used to extract the charge information from both ion and gamma-ray interactions. Furthermore, standard charge-sensitive circuits yield high SNR

CMOS sensor as charged particles and ionizing radiation detector

NASA Astrophysics Data System (ADS)

Cruz-Zaragoza, E.; Piña López, I.

2015-01-01

This paper reports results of CMOS sensor suitable for use as charged particles and ionizing radiation detector. The CMOS sensor with 640 × 480 pixels area has been integrated into an electronic circuit for detection of ionizing radiation and it was exposed to alpha particle (Am-241, Unat), beta (Sr-90), and gamma photons (Cs-137). Results show after long period of time (168 h) irradiation the sensor had not loss of functionality and also the energy of the charge particles and photons were very well obtained.

Up-conversion of MMW radiation to visual band using glow discharge detector and silicon detector

NASA Astrophysics Data System (ADS)

Aharon Akram, Avihai; Rozban, Daniel; Abramovich, Amir; Yitzhaky, Yitzhak; Kopeika, Natan S.

2016-10-01

In this work we describe and demonstrate a method for up-conversion of millimeter wave (MMW) radiation to the visual band using a very inexpensive miniature Glow Discharge Detector (GDD), and a silicon detector (photodetector). Here we present 100 GHz up-conversion images based on measuring the visual light emitting from the GDD rather than its electrical current. The results showed better response time of 480 ns and better sensitivity compared to the electronic detection that was performed in our previous work. In this work we performed MMW imaging based on this method using a GDD lamp, and a photodetector to measure GDD light emission.

Elevated Radiation Exposure Associated With Above Surface Flat Detector Mini C-Arm Use.

PubMed

Martin, Dennis P; Chapman, Talia; Williamson, Christopher; Tinsley, Brian; Ilyas, Asif M; Wang, Mark L

2017-11-01

This study aims to test the hypothesis that: (1) radiation exposure is increased with the intended use of Flat Surface Image Intensifier (FSII) units above the operative surface compared with the traditional below-table configuration; (2) this differential increases in a dose-dependent manner; and (3) radiation exposure varies with body part and proximity to the radiation source. A surgeon mannequin was seated at a radiolucent hand table, positioned for volar distal radius plating. Thermoluminescent dosimeters measured exposure to the eyes, thyroid, chest, hand, and groin, for 1- and 15-minute trials from a mini C-arm FSII unit positioned above and below the operating surface. Background radiation was measured by control dosimeters placed within the operating theater. At 1-minute of exposure, hand and eye dosages were significantly greater with the flat detector positioned above the table. At 15-minutes of exposure, hand radiation dosage exceeded that of all other anatomic sites with the FSII in both positions. Hand exposure was increased in a dose-dependent manner with the flat detector in either position, whereas groin exposure saw a dose-dependent only with the flat detector beneath the operating table. These findings suggest that the surgeon's hands and eyes may incur greater radiation exposure compared with other body parts, during routine mini C-arm FSII utilization in its intended position above the operating table. The clinical impact of these findings remains unclear, and future long-term radiation safety investigation is warranted. Surgeons should take precautions to protect critical body parts, particularly when using FSII technology above the operating with prolonged exposure time.

The ATLAS SemiConductor Tracker operation and performance

NASA Astrophysics Data System (ADS)

Pater, J. R.

2012-04-01

The ATLAS SemiConductor Tracker (SCT) is a key precision tracking detector in the ATLAS experiment at CERN's Large Hadron Collider. The SCT is composed of 4088 planar p-in-n silicon micro-strip detectors. The signals from the strips are processed in the front-end ABCD3TA ASICs, which operate in binary readout mode; data are transferred to the off-detector readout electronics via optical fibres. The SCT was completed in 2007. An extensive commissioning phase followed, during which calibration data were collected and analysed to determine the noise performance of the system, and further performance parameters of the detector were determined using cosmic ray data, both with and without magnetic field. After the commissioning phase, the SCT was ready for the first LHC proton-proton collisions in December 2009. From the beginning of data taking, the completed SCT has been in very good shape with more than 99% of its 6.3 million strips operational; the detector is well timed-in and the operational channels are 99.9% efficient in data acquisition. The noise occupancy and hit efficiency are better than the design specifications. The detector geometry is monitored continuously with a laser-based alignment system and is stable to the few-micron level; the alignment accuracy as determined by tracks is near specification and improving as statistics increase. The sensor behaviour in the 2T solenoidal magnetic field has been studied by measuring the Lorentz angle. Radiation damage in the silicon is monitored by periodic measurements of the leakage current; these measurements are in reasonable agreement with predictions.

Dichroic filters to protect milliwatt far-infrared detectors from megawatt ECRH radiation.

PubMed

Bertschinger, G; Endres, C P; Lewen, F; Oosterbeek, J W

2008-10-01

Dichroic filters have been used to shield effectively the far infrared (FIR) detectors at the interferometer/polarimeter on TEXTOR. The filters consist of metal foils with regular holes, the hole diameter, the mutual spacing and the thickness of the foils are chosen to transmit radiation at the design frequency with transmission >90%. The attenuation at the low frequency end of the bandpass filter is about 30 dB per octave, the high frequency transmission is between 20% and 40%. The filters have been used to block the stray radiation from the megawatt microwave heating beam to the detectors of the FIR interferometer, operating with power on the detector in the milliwatt range. If required, the low frequency attenuation can be still enhanced, without compromising the transmission in the passband. The FIR interferometer used for plasma density and position control is no longer disturbed by electromagnetic waves used for plasma heating.

The Beginning of Semiconductor Research in Cuba

NASA Astrophysics Data System (ADS)

Veltfort, Theodore

I was invited to Cuba in 1962 to initiate some efforts in semiconductor development. I had been a physicist and senior research engineer with various electronic companies of the "Silicon Valley" of California, south of San Francisco. I had heard of the efforts made by the new revolutionary government of Cuba to advance the level of science and technology, and I was anxious to see what I could do to help.

Hybrid Molecular and Spin-Semiconductor Based Research

DTIC Science & Technology

2005-02-02

thick layers of low- temperature-grown (LTG) GaAs, i.e. GaAs grown at lower than normal substrate temperatures in a molecular beam epitaxy system...1999 – Oct.31, 2004 4. TITLE AND SUBTITLE Hybrid Molecular and Spin-Semiconductor Based research 5. FUNDING NUMBERS DAAD19-99-1-0198...spintronic devices. Thrust III is entitled “ Molecular Electronics” and its objective is to develop, characterize and model organic/inorganic

High-efficiency scintillation detector for combined detection of thermal and fast neutrons and gamma radiation

DOEpatents

Chiles, M.M.; Mihalczo, J.T.; Blakeman, E.D.

1987-02-27

A scintillation based radiation detector for the combined detection of thermal neutrons, high-energy neutrons and gamma rays in a single detecting unit. The detector consists of a pair of scintillators sandwiched together and optically coupled to the light sensitive face of a photomultiplier tube. A light tight radiation pervious housing is disposed about the scintillators and a portion of the photomultiplier tube to hold the arrangement in assembly and provides a radiation window adjacent the outer scintillator through which the radiation to be detected enters the detector. The outer scintillator is formed of a material in which scintillations are produced by thermal-neutrons and the inner scintillator is formed of a material in which scintillations are produced by high-energy neutrons and gamma rays. The light pulses produced by events detected in both scintillators are coupled to the photomultiplier tube which produces a current pulse in response to each detected event. These current pulses may be processed in a conventional manner to produce a count rate output indicative of the total detected radiation event count rate. Pulse discrimination techniques may be used to distinguish the different radiations and their energy distribution.

The simulation of the LANFOS-H food radiation contamination detector using Geant4 package

NASA Astrophysics Data System (ADS)

Piotrowski, Lech Wiktor; Casolino, Marco; Ebisuzaki, Toshikazu; Higashide, Kazuhiro

2015-02-01

Recent incident in the Fukushima power plant caused a growing concern about the radiation contamination and resulted in lowering the Japanese limits for the permitted amount of 137Cs in food to 100 Bq/kg. To increase safety and ease the concern we are developing LANFOS (Large Food Non-destructive Area Sampler)-a compact, easy to use detector for assessment of radiation in food. Described in this paper LANFOS-H has a 4 π coverage to assess the amount of 137Cs present, separating it from the possible 40K food contamination. Therefore, food samples do not have to be pre-processed prior to a test and can be consumed after measurements. It is designed for use by non-professionals in homes and small institutions such as schools, showing safety of the samples, but can be also utilized by specialists providing radiation spectrum. Proper assessment of radiation in food in the apparatus requires estimation of the γ conversion factor of the detectors-how many γ photons will produce a signal. In this paper we show results of the Monte Carlo estimation of this factor for various approximated shapes of fish, vegetables and amounts of rice, performed with Geant4 package. We find that the conversion factor combined from all the detectors is similar for all food types and is around 37%, varying maximally by 5% with sample length, much less than for individual detectors. The different inclinations and positions of samples in the detector introduce uncertainty of 1.4%. This small uncertainty validates the concept of a 4 π non-destructive apparatus.

Electrical properties study under radiation of the 3D-open-shell-electrode detector

NASA Astrophysics Data System (ADS)

Liu, Manwen; Li, Zheng

2018-05-01

Since the 3D-Open-Shell-Electrode Detector (3DOSED) is proposed and the structure is optimized, it is important to study 3DOSED's electrical properties to determine the detector's working performance, especially in the heavy radiation environments, like the Large Hadron Collider (LHC) and it's upgrade, the High Luminosity (HL-LHC) at CERN. In this work, full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Simulated detector properties include the electric field distribution, the electric potential distribution, current-voltage (I-V) characteristics, capacitance-voltage (C-V) characteristics, charge collection property, and full depletion voltage. Through the analysis of calculations and simulation results, we find that the 3DOSED's electric field and potential distributions are very uniform, even in the tiny region near the shell openings with little perturbations. The novel detector fits the designing purpose of collecting charges generated by particle/light in a good fashion with a well defined funnel shape of electric potential distribution that makes these charges drifting towards the center collection electrode. Furthermore, by analyzing the I-V, C-V, charge collection property and full depletion voltage, we can expect that the novel detector will perform well, even in the heavy radiation environments.

Multiple Detector Optimization for Hidden Radiation Source Detection

DTIC Science & Technology

2015-03-26

important in achieving operationally useful methods for optimizing detector emplacement, the 2-D attenuation model approach promises to speed up the...process of hidden source detection significantly. The model focused on detection of the full energy peak of a radiation source. Methods to optimize... radioisotope identification is possible without using a computationally intensive stochastic model such as the Monte Carlo n-Particle (MCNP) code

Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships

ERIC Educational Resources Information Center

Logar, Nathaniel; Anadon, Laura Diaz; Narayanamurti, Venkatesh

2014-01-01

In the study of innovation institutions, it is important to consider how different institutional models can affect a research organization in conducting or funding successful work. As an industry collaborative, Semiconductor Research Corporation (SRC) provides an example of a privately funded institution that leverages the inputs of several member…

Autoradiography imaging in targeted alpha therapy with Timepix detector.

PubMed

A L Darwish, Ruqaya; Staudacher, Alexander Hugo; Bezak, Eva; Brown, Michael Paul

2015-01-01

There is a lack of data related to activity uptake and particle track distribution in targeted alpha therapy. These data are required to estimate the absorbed dose on a cellular level as alpha particles have a limited range and traverse only a few cells. Tracking of individual alpha particles is possible using the Timepix semiconductor radiation detector. We investigated the feasibility of imaging alpha particle emissions in tumour sections from mice treated with Thorium-227 (using APOMAB), with and without prior chemotherapy and Timepix detector. Additionally, the sensitivity of the Timepix detector to monitor variations in tumour uptake based on the necrotic tissue volume was also studied. Compartmental analysis model was used, based on the obtained imaging data, to assess the Th-227 uptake. Results show that alpha particle, photon, electron, and muon tracks were detected and resolved by Timepix detector. The current study demonstrated that individual alpha particle emissions, resulting from targeted alpha therapy, can be visualised and quantified using Timepix detector. Furthermore, the variations in the uptake based on the tumour necrotic volume have been observed with four times higher uptake for tumours pretreated with chemotherapy than for those without chemotherapy.

Autoradiography Imaging in Targeted Alpha Therapy with Timepix Detector

PubMed Central

AL Darwish, Ruqaya; Staudacher, Alexander Hugo; Bezak, Eva; Brown, Michael Paul

2015-01-01

There is a lack of data related to activity uptake and particle track distribution in targeted alpha therapy. These data are required to estimate the absorbed dose on a cellular level as alpha particles have a limited range and traverse only a few cells. Tracking of individual alpha particles is possible using the Timepix semiconductor radiation detector. We investigated the feasibility of imaging alpha particle emissions in tumour sections from mice treated with Thorium-227 (using APOMAB), with and without prior chemotherapy and Timepix detector. Additionally, the sensitivity of the Timepix detector to monitor variations in tumour uptake based on the necrotic tissue volume was also studied. Compartmental analysis model was used, based on the obtained imaging data, to assess the Th-227 uptake. Results show that alpha particle, photon, electron, and muon tracks were detected and resolved by Timepix detector. The current study demonstrated that individual alpha particle emissions, resulting from targeted alpha therapy, can be visualised and quantified using Timepix detector. Furthermore, the variations in the uptake based on the tumour necrotic volume have been observed with four times higher uptake for tumours pretreated with chemotherapy than for those without chemotherapy. PMID:25688285

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Amin, Yusoff Mohd; Periasamy, Vengadesh

2015-01-01

Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors. PMID:25730484

Coated semiconductor devices for neutron detection

DOEpatents

Klann, Raymond T.; McGregor, Douglas S.

2002-01-01

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Evaluation of Segmented Amorphous-Contact Planar Germanium Detectors for Heavy-Element Research

NASA Astrophysics Data System (ADS)

Jackson, Emily G.

(>14 cm) wafers is being considered as the next step forward in germanium detector technology. A Small Business Innovative Research (SBIR) grant is funding the construction of such a counter, the world's largest, along with research into radiation hardness. The measurements reported here are encouraging for both ultra-high gamma-ray count rates and for neutron-damage, though reliable high temperature annealing to remove neutron-induced trapping centers will be essential for success.

High-energy cosmic-ray electrons - A new measurement using transition-radiation detectors

NASA Technical Reports Server (NTRS)

Hartmann, G.; Mueller, D.; Prince, T.

1977-01-01

A new detector for cosmic-ray electrons, consisting of a combination of a transition-radiation detector and a shower detector, has been constructed, calibrated at accelerator beams, and exposed in a balloon flight under 5 g/sq cm of atmosphere. The design of this instrument and the methods of data analysis are described. Preliminary results in the energy range 9-300 GeV are presented. The energy spectrum of electrons is found to be significantly steeper than that of protons, consistent with a long escape lifetime of cosmic rays in the galaxy.

Zinc Alloys for the Fabrication of Semiconductor Devices

NASA Technical Reports Server (NTRS)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

Dosimetric characterization of a single crystal diamond detector in X-ray beams for preclinical research.

PubMed

Kampfer, Severin; Cho, Nathan; Combs, Stephanie E; Wilkens, Jan J

2018-05-29

The aim of this study was to investigate a single crystal diamond detector, the microDiamond detector from PTW (PTW-Freiburg, Freiburg, Germany), concerning the particular requirements in the set-up and energy range used in small animal radiotherapy (RT) research (around 220kV). We tested it to find out the minimal required pre-irradiation dose, the dose linearity, dose rate dependency and the angular response as well as usability in the small animal radiation research platform, SARRP (Xstrahl Ltd., Camberley, UK). For a stable signal in the range of energies used in the study, we found a required pre-irradiation dose of 10Gy. The dose linearity and dose rate dependence measurements showed a very good performance of the microDiamond detector. Regarding the effect of angular dependency, the variation of the response signal is less than 0.5% within the first 15° of the polar angle. In the azimuthal angle, however, there are differences in detector response up to 20%, depending on the range of energies used in the study. In addition, we compared the detector to a radiosensitive film for a profile measurement of a 5×5mm 2 irradiation field. Both methods showed a good accordance with the field size, however, the film has a steeper dose gradient in the penumbra region but also a higher noise than the microDiamond detector. We demonstrated that the microDiamond detector is a useful measurement tool for small animal RT research due to its small size. Nevertheless, it seems to be very important to verify the response of the detector in the given set-up and energy range. Copyright © 2018. Published by Elsevier GmbH.

Radiation measurement platform for balloon flights based on the TriTel silicon detector telescope

NASA Astrophysics Data System (ADS)

Zabori, Balazs; Hirn, Attila; Pazmandi, Tamas; Apathy, Istvan; Szanto, Peter; Deme, Sandor

Several measurements have been performed on the cosmic radiation field from the surface of the Earth up to the maximum altitudes of research airplanes. However the cosmic radiation field is not well known between 15 km and 30 km. Our experiment idea based on to study the radiation environment in the stratosphere. The main technical goals of our experiment were to test at first time the TriTel 3D silicon detector telescope system for future ISS missons and to develop a balloon technology platform for advanced cosmic radiation and dosimetric measurements. The main scientific goals were to give an assessment of the cosmic radiation field at the altitude of the BEXUS balloons, to use the TriTel system to determine dosimetric and radiation quantities during the ballon flight and to intercompare the TriTel and Pille results to provide a correction factor definition method for the Pille ISS measurements. To fulfil the scientific and technological objectives several different dosimeter systems were included in the experiment: an advanced version of the TriTel silicon detector telescope, Geiger-Müller counters, Pille passive thermoluminescent dosimeters and Solid State Nuclear Track Detectors. The experiment was built by students from Hungarian universities and flew on board the BEXUS stratospheric balloon in Northern Sweden (from ESRANGE Space Center). The float altitude was approximately 28.6 km and the total flight time was about 4 hours. The active instruments measured in real time and the ground team received the collected data continuously during the mission. The main technical goals were received since the operation of the TriTel experienced no failures and the experiment worked as it expected. This paper presents the scientific goals and results. From the TriTel measurements the deposited energy spectra, the Linear Energy Transfer spectra, the average quality factor of the cosmic radiation as well as the absorbed dose and the dose equivalent were determined for the

A novel radiation detector for removing scattered radiation in chest radiography: Monte Carlo simulation-based performance evaluation

NASA Astrophysics Data System (ADS)

Roh, Y. H.; Yoon, Y.; Kim, K.; Kim, J.; Kim, J.; Morishita, J.

2016-10-01

Scattered radiation is the main reason for the degradation of image quality and the increased patient exposure dose in diagnostic radiology. In an effort to reduce scattered radiation, a novel structure of an indirect flat panel detector has been proposed. In this study, a performance evaluation of the novel system in terms of image contrast as well as an estimation of the number of photons incident on the detector and the grid exposure factor were conducted using Monte Carlo simulations. The image contrast of the proposed system was superior to that of the no-grid system but slightly inferior to that of the parallel-grid system. The number of photons incident on the detector and the grid exposure factor of the novel system were higher than those of the parallel-grid system but lower than those of the no-grid system. The proposed system exhibited the potential for reduced exposure dose without image quality degradation; additionally, can be further improved by a structural optimization considering the manufacturer's specifications of its lead contents.

Prototypes of Self-Powered Radiation Detectors Employing Intrinsic High-Energy Current (HEC) (POSTPRINT)

DTIC Science & Technology

2016-01-01

neutron sensi- tivities of a Pt self - powered detector ,” IEEE Trans. Nucl. Sci. 25, 292–295 (1978). 6T. A. Dellin, R. E. Huddleston, and C. J...Gamma-sensitive self - powered detectors and their use for in-core flux -mapping,” IEEE Trans. Nucl. Sci. 28, 752–757 (1981). 9E. A. Burke and J. Wall...AFCEC-CX-TY-TP-2016-0006 PROTOTYPES OF SELF - POWERED RADIATION DETECTORS EMPLOYING INTRINSIC HIGH-ENERGY CURRENT (HEC) (POSTPRINT) Piotr

Lithium-drifted silicon detector with segmented contacts

DOEpatents

Tindall, Craig S.; Luke, Paul N.

2006-06-13

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

A Self-Powered Thin-Film Radiation Detector Using Intrinsic High-Energy Current (HEC) (Author’s Final Version)

DTIC Science & Technology

2016-09-08

10.1118/1.4935531. A new radiation detection method relies on high-energy current (HEC) formed by secondary charged particles in the detector material...photocurrent, radiation detection , self-powered, thin-film U U U SAR 17 Dr. Joseph Wander Reset A Self-powered thin-film radiation detector using intrinsic...Program, Lowell, MA 01854 Purpose: We introduce a radiation detection method that relies on high-energy current (HEC) formed by secondary 10 charged

High field CdS detector for infrared radiation

NASA Technical Reports Server (NTRS)

Tyagi, R. C.; Robertson, J. B.; Boer, K. W.; Hadley, H. C., Jr. (Inventor)

1974-01-01

An infrared radiation detector including a cadmium sulfide platelet having a cathode formed on one of its ends and an anode formed on its other end is presented. The platelet is suitably doped such that stationary high-field domains are formed adjacent the cathode when based in the negative differential conductivity region. A negative potential is applied to the cathode such that a high-field domain is formed adjacent to the cathode. A potential measuring probe is located between the cathode and the anode at the edge of the high-field domain and means are provided for measuring the potential at the probe whereby this measurement is indicative of the infrared radiation striking the platelet.

Radiation effects on ALICE V0 detector components

NASA Astrophysics Data System (ADS)

Cheynis, B.; Ducroux, L.; Grossiord, J.-Y.; Guichard, A.; Pillot, P.; Rapp, B.; Tieulent, R.; Tromeur, W.; Zoccarato, Y.

2006-12-01

The 60 MeV proton beam delivered by the RADEF facility of the University of Jyväskylä (Finland) was used to measure the radiation effects on the counter components of the V0 detector of ALICE. There are the scintillator BC404, the wavelength shifting fibres BCF9929A and the optical fibres BCF98 from Bicron (Saint-Gobain). The light yield and the time resolution given by a counter of the inner ring of the V0C array, mounted within a dedicated device, were measured as a function of the radiation dose up to about 300 krad. A global light attenuation of the order of 30% can be anticipated during 10 years of ALICE running.

Evaluation of a GEM and CAT-based detector for radiation therapy beam monitoring

NASA Astrophysics Data System (ADS)

Brahme, A.; Danielsson, M.; Iacobaeus, C.; Ostling, J.; Peskov, V.; Wallmark, M.

2000-11-01

We are developing a radiation therapy beam monitor for the Karolinska Institute. This monitor will consist of two consecutive detectors confined in one gas chamber: a "keV-photon detector", which will allow diagnostic quality visualization of the patient, and a "MeV-photon detector", that will measure the absolute intensity of the therapy beam and its position with respect to the patient. Both detectors are based on highly radiation resistant gas and solid photon to electron converters, combined with GEMs and a CAT as amplification structures. We have performed systematic studies of the high-rate characteristics of the GEM and the CAT, as well as tested the electron transfer through these electron multipliers and various types of converters. The tests show that the GEM and the CAT satisfy all requirements for the beam monitoring system. As a result of these studies we successfully developed and tested a full section of the beam monitor equipped with a MeV-photon converter placed between the GEM and the CAT.

GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

NASA Technical Reports Server (NTRS)

Aslam, S.; Gronoff, G.; Hewagama, T.; Janz, S.; Kotecki, C.

2012-01-01

The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

Calibration of the active radiation detector for Spacelab-One

NASA Technical Reports Server (NTRS)

1982-01-01

The flight models of the active radiation detector (ARD) for the ENV-01 environmental monitor were calibrated using gamma radiation. Measured sensitivities of the ion chambers were 6.1 + or - 0.3 micron rad per count for ARD S/N1, and 10.4 + or - 0.5 micron rad per count for ARD S/N2. Both were linear over the measured range 0.10 to 500 m/rad hour. The particle counters (proportional counters) were set to respond to approximately 85% of minimum ionizing particles of unit charge passing through them. These counters were also calibrated in the gamma field.

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

Laser system for testing radiation imaging detector circuits

NASA Astrophysics Data System (ADS)

Zubrzycka, Weronika; Kasinski, Krzysztof

2015-09-01

Performance and functionality of radiation imaging detector circuits in charge and position measurement systems need to meet tight requirements. It is therefore necessary to thoroughly test sensors as well as read-out electronics. The major disadvantages of using radioactive sources or particle beams for testing are high financial expenses and limited accessibility. As an alternative short pulses of well-focused laser beam are often used for preliminary tests. There are number of laser-based devices available on the market, but very often their applicability in this field is limited. This paper describes concept, design and validation of laser system for testing silicon sensor based radiation imaging detector circuits. The emphasis is put on keeping overall costs low while achieving all required goals: mobility, flexible parameters, remote control and possibility of carrying out automated tests. The main part of the developed device is an optical pick-up unit (OPU) used in optical disc drives. The hardware includes FPGA-controlled circuits for laser positioning in 2 dimensions (horizontal and vertical), precision timing (frequency and number) and amplitude (diode current) of short ns-scale (3.2 ns) light pulses. The system is controlled via USB interface by a dedicated LabVIEW-based application enabling full manual or semi-automated test procedures.

COTS Silicon diodes as radiation detectors in proton and heavy charged particle radiotherapy 1.

PubMed

Kaiser, Franz-Joachim; Bassler, Niels; Jäkel, Oliver

2010-08-01

Modern radiotherapy facilities for cancer treatment such as the Heavy Ion Therapy Center (HIT) in Heidelberg, Germany, allow for sub-millimeter precision in dose deposition. For measurement of such dose distributions and characterization of the particle beams, detectors with high spatial resolution are necessary. Here, a detector based on the commercially available COTS photodiode (BPW-34) is presented. When applied in hadronic beams of protons and carbon ions, the detector reproduces dose distribution well, but its response decreases rapidly by radiation damage. However, for MeV photon beams, the detector exhibits a similar behavior as found in diode detectors usually applied in radiotherapy.

Synthesis and electronic properties of nanophase semiconductor materials

NASA Astrophysics Data System (ADS)

Sailor, Michael J.

1993-05-01

The objective of the research effort is to understand and learn to control the morphologic and electronic properties of electrodeposited nanophase semiconductors. The initial work has focused on electrodeposition of nanophase CdSe, using a sequential monolayer deposition technique that we are developing. We are currently extending the synthesis phase of this project into silicon, silicon carbide, and phosphor materials. This work also encompasses studying semiconductor electrodeposition into materials with restricted dimensions, such as microporous alumina and porous silicon membranes. By growing films with very small grain sizes, we hope to produce and study materials that display unusual electronic or luminescent effects. We are primarily interested in the electronic properties of the II-VI and group IV materials, for potential applications in nanoscale electronics and optical detector technologies. The phosphors are being studied for their potential as efficient high-resolution display materials.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, G. R.; Gordon, N. T.; Hall, D. J.; Ashby, M. K.; Little, J. C.; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, M. T.; Ashley, T.

2004-01-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas sensing; radiation shielding for, and non-uniformity correction of, high sensitivity staring infrared detectors; and dynamic infrared scene projection. Similarly, infrared (IR) detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We present results on negative luminescence in the mid- and long-IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1 cm×1 cm. We also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high-performance imaging is anticipated from systems which require no mechanical cooling.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, Geoff R.; Gordon, Neil T.; Hall, David J.; Little, J. Chris; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, Martin T.; Ashley, Tim

2004-02-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source" of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very higher performance imaging is anticipated from systems which require no mechanical cooling.

Infrared Negative Luminescent Devices and Higher Operating Temperature Detectors

NASA Astrophysics Data System (ADS)

Ashley, Tim

2003-03-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a source' of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high performance imaging is anticipated from systems which require no mechanical cooling.

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon [Pinole, CA; Bruchez, Jr., Marcel; Alivisatos, Paul [Oakland, CA

2008-01-01

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

NASA Astrophysics Data System (ADS)

Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

2017-03-01

In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

Crystal growth and characterization of europium doped lithium strontium iodide scintillator as an ionizing radiation detector

NASA Astrophysics Data System (ADS)

Uba, Samuel

High performance detectors used in the detection of ionizing radiation is critical to nuclear nonproliferation applications and other radiation detectors applications. In this research we grew and tested Europium doped Lithium Strontium Iodide compound. A mixture of lithium iodide, strontium iodide and europium iodide was used as the starting materials for this research. Congruent melting and freezing temperature of the synthesized compound was determined by differential scanning calorimetry (DSC) using a Setaram Labsys Evo DSC-DTA instrument. The melting temperatures were recorded at 390.35°C, 407.59°C and freezing temperature was recorded at 322.84°C from a graph of heat flow plotted against temperature. The synthesized material was used as the charge for the vertical Bridgeman growth, and a 6.5 cm and 7.7cm length boule were grown in a multi-zone transparent Mullen furnace. A scintillating detector of thickness 2.53mm was fabricated by mechanical lapping in mineral oil, and scintillating response and timing were obtained to a cesium source using CS-137 isotope. An energy resolution (FWHM over peak position) of 12.1% was observed for the 662keV full absorption peak. Optical absorption in the UV-Vis wavelength range was recorded for the grown crystal using a U-2900 UV/VIS Spectrophotometer. Absorption peaks were recorded at 194nm, 273nm, and 344nm from the absorbance spectrum, various optical parameters such as absorption coefficient, extinction coefficient, refractive index, and optical loss were derived. The optical band gap energy was calculated using Tauc relation expression at 1.79eV.

Radiation dose of digital tomosynthesis for sinonasal examination: comparison with multi-detector CT.

PubMed

Machida, Haruhiko; Yuhara, Toshiyuki; Tamura, Mieko; Numano, Tomokazu; Abe, Shinji; Sabol, John M; Suzuki, Shigeru; Ueno, Eiko

2012-06-01

Using an anthropomorphic phantom, we have investigated the feasibility of digital tomosynthesis (DT) of flat-panel detector (FPD) radiography to reduce radiation dose for sinonasal examination compared to multi-detector computed tomography (MDCT). A female Rando phantom was scanned covering frontal to maxillary sinus using the clinically routine protocol by both 64-detector CT (120 kV, 200 mAs, and 1.375-pitch) and DT radiography (80 kV, 1.0 mAs per projection, 60 projections, 40° sweep, and posterior-anterior projections). Glass dosimeters were used to measure the radiation dose to internal organs including the thyroid gland, brain, submandibular gland, and the surface dose at various sites including the eyes during those scans. We compared the radiation dose to those anatomies between both modalities. In DT radiography, the doses of the thyroid gland, brain, submandibular gland, skin, and eyes were 230 ± 90 μGy, 1770 ± 560 μGy, 1400 ± 80 μGy, 1160 ± 2100 μGy, and 112 ± 6 μGy, respectively. These doses were reduced to approximately 1/5, 1/8, 1/12, 1/17, and 1/290 of the respective MDCT dose. For sinonasal examinations, DT radiography enables dramatic reduction in radiation exposure and dose to the head and neck region, particularly to the lens of the eye. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

Mars science laboratory radiation assessment detector (MSL/RAD) modeling workshop proceedings

NASA Astrophysics Data System (ADS)

Hassler, Donald M.; Norbury, John W.; Reitz, Günther

2017-08-01

The Radiation Assessment Detector (RAD) (Hassler et al., 2012; Zeitlin et al., 2016) onboard the Mars Science Laboratory (MSL) Curiosity rover (Grotzinger et al., 2012) is a sophisticated charged and neutral particle radiation analyzer developed by an international team of scientists and engineers from Southwest Research Institute in Boulder, Colorado as the leading institution, the University of Kiel and the German Aerospace Center in Cologne, Germany. RAD is a compact, powerful instrument capable of distinguishing between ionizing particles and neutral particles and providing neutron, gamma, and charged particle spectra from protons to iron as well as absorbed dose measurements in tissue-equivalent material. During the 6 month cruise to Mars, inside the MSL spacecraft, RAD served as a proxy to validate models of the radiation levels expected inside a spacecraft that future astronauts might experience (Zeitlin et al., 2013). RAD was turned on one day after the landing on August 7, 2012, exactly 100 years to the day after the discovery of cosmic rays on Earth by Victor Hess. These measurements are the first of their kind on the surface of another planet (Hassler et al., 2014), and the radiation data collected by RAD on the surface of Mars will inform projections of crew health risks and the design of protective surface habitats and other countermeasures for future human missions in the coming decades.

Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors: Effect of chlorination on the TlBr band edges for radiation detectors

DOE PAGES

Varley, J. B.; Conway, A. M.; Voss, L. F.; ...

2015-02-09

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

Imaging detectors and electronics—a view of the future

NASA Astrophysics Data System (ADS)

Spieler, Helmuth

2004-09-01

Imaging sensors and readout electronics have made tremendous strides in the past two decades. The application of modern semiconductor fabrication techniques and the introduction of customized monolithic integrated circuits have made large-scale imaging systems routine in high-energy physics. This technology is now finding its way into other areas, such as space missions, synchrotron light sources, and medical imaging. I review current developments and discuss the promise and limits of new technologies. Several detector systems are described as examples of future trends. The discussion emphasizes semiconductor detector systems, but I also include recent developments for large-scale superconducting detector arrays.

Stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor

NASA Astrophysics Data System (ADS)

Ferdous, T.; Salahuddin, M.; Amin, M. R.; Salimullah, M.

1995-09-01

In the present paper we have studied the stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor. The nonlinearity in the low-frequency ion-acoustic wave arises through the ponderomotive force on both electrons and holes. The high-frequency nonlinearity arises through the nonlinear current density. For typical plasma parameters in compensated Ge, ɛL=16, T0=77 K, n00=1017 cm-3, Bs=60 kG, θ=30°, laser power density corresponding to a CO2 laser ~=0.1 MW cm-2, the growth rate of the low-frequency ion-acoustic wave turns out to be ~=107 rad sec-1.

Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

DOEpatents

Conway, Adam; Beck, Patrick R; Graff, Robert T; Nelson, Art; Nikolic, Rebecca J; Payne, Stephen A; Voss, Lars; Kim, Hadong

2015-04-07

A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

Measuring the activity of a {sup 51}Cr neutrino source based on the gamma-radiation spectrum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorbachev, V. V., E-mail: vvgor-gfb1@mail.ru; Gavrin, V. N.; Ibragimova, T. V.

A technique for the measurement of activities of intense β sources by measuring the continuous gamma-radiation (internal bremsstrahlung) spectra is developed. A method for reconstructing the spectrum recorded by a germanium semiconductor detector is described. A method for the absolute measurement of the internal bremsstrahlung spectrum of {sup 51}Cr is presented.

III-V semiconductor solid solution single crystal growth

NASA Technical Reports Server (NTRS)

Gertner, E. R.

1982-01-01

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Optical characterization of wide-gap detector-grade semiconductors

NASA Astrophysics Data System (ADS)

Elshazly, Ezzat S.

Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd1-xZnxTe, x˜0.1) and Thallium Bromide (TlBr), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and TlBr as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064nm wavelength and 7ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300K to 110K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (TlBr) and compared with the results for cadmium zinc telluride (CZT) in a

A radiation detector design mitigating problems related to sawed edges

NASA Astrophysics Data System (ADS)

Aurola, A.; Marochkin, V.; Tuuva, T.

2014-12-01

In pixelated silicon radiation detectors that are utilized for the detection of UV, visible, and in particular Near Infra-Red (NIR) light it is desirable to utilize a relatively thick fully depleted Back-Side Illuminated (BSI) detector design providing 100% Fill Factor (FF), low Cross-Talk (CT), and high Quantum Efficiency (QE). The optimal thickness of such detectors is typically less than 300μm and above 40μm and thus it is more or less mandatory to thin the detector wafer from the backside after the front side of the detector has been processed and before a conductive layer is formed on the backside. A TAIKO thinning process is optimal for such a thickness range since neither a support substrate on the front side nor lithographic steps on the backside are required. The conductive backside layer should, however, be homogenous throughout the wafer and it should be biased from the front side of the detector. In order to provide good QE for blue and UV light the conductive backside layer should be of opposite doping type than the substrate. The problem with a homogeneous backside layer being of opposite doping type than the substrate is that a lot of leakage current is typically generated at the sawed chip edges, which may increase the dark noise and the power consumption. These problems are substantially mitigated with a proposed detector edge arrangement which 2D simulation results are presented in this paper.

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin`ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Atsushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

2014-11-01

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0-2.0 keV (FWHM) at 60 keV and 1.6-2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.

Silicon Drift Detector response function for PIXE spectra fitting

NASA Astrophysics Data System (ADS)

Calzolai, G.; Tapinassi, S.; Chiari, M.; Giannoni, M.; Nava, S.; Pazzi, G.; Lucarelli, F.

2018-02-01

The correct determination of the X-ray peak areas in PIXE spectra by fitting with a computer program depends crucially on accurate parameterization of the detector peak response function. In the Guelph PIXE software package, GUPIXWin, one of the most used PIXE spectra analysis code, the response of a semiconductor detector to monochromatic X-ray radiation is described by a linear combination of several analytical functions: a Gaussian profile for the X-ray line itself, and additional tail contributions (exponential tails and step functions) on the low-energy side of the X-ray line to describe incomplete charge collection effects. The literature on the spectral response of silicon X-ray detectors for PIXE applications is rather scarce, in particular data for Silicon Drift Detectors (SDD) and for a large range of X-ray energies are missing. Using a set of analytical functions, the SDD response functions were satisfactorily reproduced for the X-ray energy range 1-15 keV. The behaviour of the parameters involved in the SDD tailing functions with X-ray energy is described by simple polynomial functions, which permit an easy implementation in PIXE spectra fitting codes.

Measurement and analysis of the conversion gain degradation of the CIS detectors in harsh radiation environments

NASA Astrophysics Data System (ADS)

Wang, Zujun; Xue, Yuanyuan; Guo, Xiaoqiang; Bian, Jingying; Yao, Zhibin; He, Baoping; Ma, Wuying; Sheng, Jiangkun; Dong, Guantao; Liu, Yan

2018-07-01

The conversion gain of the CMOS image sensor (CIS) is one of the most important key parameters to the CIS detector. The conversion gain degradation induced by radiation damage will seriously affect the performances of the CIS detector. The experiments of the CISs irradiated by protons, neutrons, and gamma rays are presented. The CISs have 4 Megapixels and pinned photodiode (PPD) pixel architecture with a standard 0.18 μm CMOS technology. The conversion gains versus the proton fluence (including the proton ionizing dose), neutron fluence and gamma total ionizing dose are presented, respectively. The mechanisms of the conversion gain degradation induced by radiation damage are analyzed in details. The investigations will help to improve the PPD CIS detector design, reliability and applicability for applications in the harsh radiation environments such as space and nuclear environments.

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

2018-01-01

The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

Characteristics of a p-Si detector in high energy electron fields.

PubMed

Rikner, G

1985-01-01

Comparison of depth ionization distributions from a silicon semiconductor detector and depth dose curves from a plane parallel ionization chamber show that a semiconductor detector of p-type is well suited for relative electron dosimetry in the energy range of 6 to 20 MeV in Ep,0. Maximum deviations of the order of 1.5 per cent and of 1 mm were obtained down to a phantom depth of about 1 mm. The directional dependence of the detector was about 4 per cent.

Assessment of the Influence of the RaD-X Balloon Payload on the Onboard Radiation Detectors

NASA Technical Reports Server (NTRS)

Gronoff, Guilluame; Mertens, Christopher J.; Norman, Ryan B.; Straume, Tore; Lusby, Terry C.

2016-01-01

The NASA Radiation Dosimetry Experiment (RaD-X) stratospheric balloon flight mission, launched on 25 September 2015, provided dosimetric measurements above the Pfotzer maximum. The goal of taking these measurements is to improve aviation radiation models by providing a characterization of cosmic ray primaries, which are the source of radiation exposure at aviation altitudes. The RaD-X science payload consists of four instruments. The main science instrument is a tissue-equivalent proportional counter (TEPC). The other instruments consisted of three solid state silicon dosimeters: Liulin, Teledyne total ionizing dose (TID) and RaySure detectors. The instruments were housed in an aluminum structure protected by a foam cover. The structure partially shielded the detectors from cosmic rays but also created secondary particles, modifying the ambient radiation environment observed by the instruments. Therefore, it is necessary to account for the influence of the payload structure on the measured doses. In this paper, we present the results of modeling the effect of the balloon payload on the radiation detector measurements using a Geant-4 (GEometry ANd Tracking) application. Payload structure correction factors derived for the TEPC, Liulin, and TID instruments are provided as a function of altitude. Overall, the payload corrections are no more than a 7% effect on the radiation environment measurements.

Design of a synchrotron radiation detector for the test beam lines at the Superconducting Super Collider Laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hutton, R.D.

1994-01-01

As part of the particle- and momentum-tagging instrumentation required for the test beam lines of the Superconducting Super Collider (SSC), the synchrotron radiation detector (SRD) was designed to provide electron tagging at momentum above 75 GeV. In a parallel effort to the three test beam lines at the SSC, schedule demands required testing and calibration operations to be initiated at Fermilab. Synchrotron radiation detectors also were to be installed in the NM and MW beam lines at Femilab before the test beam lines at the SSC would become operational. The SRD is the last instrument in a series of threemore » used in the SSC test beam fines. It follows a 20-m drift section of beam tube downstream of the last silicon strip detector. A bending dipole just in of the last silicon strip detector produces the synchrotron radiation that is detected in a 50-mm-square cross section NaI crystal. A secondary scintillator made of Bicron BC-400 plastic is used to discriminate whether it is synchrotron radiation or a stray particle that causes the triggering of the NaI crystal`s photo multiplier tube (PMT).« less

Zenith: A Radiosonde Detector for Rapid-Response Ionizing Atmospheric Radiation Measurements During Solar Particle Events

NASA Astrophysics Data System (ADS)

Dyer, A. C. R.; Ryden, K. A.; Hands, A. D. P.; Dyer, C.; Burnett, C.; Gibbs, M.

2018-03-01

Solar energetic particle events create radiation risks for aircraft, notably single-event effects in microelectronics along with increased dose to crew and passengers. In response to this, some airlines modify their flight routes after automatic alerts are issued. At present these alerts are based on proton flux measurements from instruments onboard satellites, so it is important that contemporary atmospheric radiation measurements are made and compared. This paper presents the development of a rapid-response system built around the use of radiosondes equipped with a radiation detector, Zenith, which can be launched from a Met Office weather station after significant solar proton level alerts are issued. Zenith is a compact, battery-powered solid-state radiation monitor designed to be connected to a Vaisala RS-92 radiosonde, which transmits all data to a ground station as it ascends to an altitude of 33 km. Zenith can also be operated as a stand-alone detector when connected to a laptop, providing real-time count rates. It can also be adapted for use on unmanned aerial vehicles. Zenith has been flown on the Met Office Civil Contingency Aircraft, taken to the European Organization for Nuclear Research-EU high energy Reference Field facility for calibration and launched on a meteorological balloon at the Met Office's weather station in Camborne, Cornwall, UK. During this sounding, Zenith measured the Pfotzer-Regener maximum to be at an altitude of 18-20 km where the count rate was measured to be 1.15 c s-1 cm-2 compared to 0.02 c s-1 cm-2 at ground level.

Gas mixtures for gas-filled radiation detectors

DOEpatents

Christophorou, Loucas G.; McCorkle, Dennis L.; Maxey, David V.; Carter, James G.

1982-01-05

Improved binary and ternary gas mixtures for gas-filled radiation detectors are provided. The components are chosen on the basis of the principle that the first component is one molecular gas or mixture of two molecular gases having a large electron scattering cross section at energies of about 0.5 eV and higher, and the second component is a noble gas having a very small cross section at and below about 1.0 eV, whereby fast electrons in the gaseous mixture are slowed into the energy range of about 0.5 eV where the cross section for the mixture is small and hence the electron mean free path is large. The reduction in both the cross section and the electron energy results in an increase in the drift velocity of the electrons in the gas mixtures over that for the separate components for a range of E/P (pressure-reduced electric field) values. Several gas mixtures are provided that provide faster response in gas-filled detectors for convenient E/P ranges as compared with conventional gas mixtures.

Fluorescence-suppressed time-resolved Raman spectroscopy of pharmaceuticals using complementary metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) detector.

PubMed

Rojalin, Tatu; Kurki, Lauri; Laaksonen, Timo; Viitala, Tapani; Kostamovaara, Juha; Gordon, Keith C; Galvis, Leonardo; Wachsmann-Hogiu, Sebastian; Strachan, Clare J; Yliperttula, Marjo

2016-01-01

In this work, we utilize a short-wavelength, 532-nm picosecond pulsed laser coupled with a time-gated complementary metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) detector to acquire Raman spectra of several drugs of interest. With this approach, we are able to reveal previously unseen Raman features and suppress the fluorescence background of these drugs. Compared to traditional Raman setups, the present time-resolved technique has two major improvements. First, it is possible to overcome the strong fluorescence background that usually interferes with the much weaker Raman spectra. Second, using the high photon energy excitation light source, we are able to generate a stronger Raman signal compared to traditional instruments. In addition, observations in the time domain can be performed, thus enabling new capabilities in the field of Raman and fluorescence spectroscopy. With this system, we demonstrate for the first time the possibility of recording fluorescence-suppressed Raman spectra of solid, amorphous and crystalline, and non-photoluminescent and photoluminescent drugs such as caffeine, ranitidine hydrochloride, and indomethacin (amorphous and crystalline forms). The raw data acquired by utilizing only the picosecond pulsed laser and a CMOS SPAD detector could be used for identifying the compounds directly without any data processing. Moreover, to validate the accuracy of this time-resolved technique, we present density functional theory (DFT) calculations for a widely used gastric acid inhibitor, ranitidine hydrochloride. The obtained time-resolved Raman peaks were identified based on the calculations and existing literature. Raman spectra using non-time-resolved setups with continuous-wave 785- and 532-nm excitation lasers were used as reference data. Overall, this demonstration of time-resolved Raman and fluorescence measurements with a CMOS SPAD detector shows promise in diverse areas, including fundamental chemical research, the

Towards a microchannel-based X-ray detector with two-dimensional spatial and time resolution and high dynamic range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adams, Bernhard W.; Mane, Anil U.; Elam, Jeffrey W.

X-ray detectors that combine two-dimensional spatial resolution with a high time resolution are needed in numerous applications of synchrotron radiation. Most detectors with this combination of capabilities are based on semiconductor technology and are therefore limited in size. Furthermore, the time resolution is often realised through rapid time-gating of the acquisition, followed by a slower readout. Here, a detector technology is realised based on relatively inexpensive microchannel plates that uses GHz waveform sampling for a millimeter-scale spatial resolution and better than 100 ps time resolution. The technology is capable of continuous streaming of time- and location-tagged events at rates greatermore » than 10 7events per cm 2. Time-gating can be used for improved dynamic range.« less

Different Detector Types Used in Plasma Physics Experiment

NASA Astrophysics Data System (ADS)

Balovnev, A. V.; Manokhin, I. L.; Grigoryeva, I. G.; Kostyushin, V. A.; Savelov, A. S.; Salakhutdinov, G. Kh.

2017-12-01

We analyzed the possibility of using different detector types (semiconductor, scintillator, thermoluminescent, nuclear emulsions) for plasma diagnostics. We investigated the main characteristics of such detectors, on the basis of which an X-ray spectrometer complex was created.

Tailoring light-matter coupling in semiconductor and hybrid-plasmonic nanowires

PubMed Central

Piccione, Brian; Aspetti, Carlos O.; Cho, Chang-Hee; Agarwal, Ritesh

2014-01-01

Understanding interactions between light and matter is central to many fields, providing invaluable insights into the nature of matter. In its own right, a greater understanding of light-matter coupling has allowed for the creation of tailored applications, resulting in a variety of devices such as lasers, switches, sensors, modulators, and detectors. Reduction of optical mode volume is crucial to enhancing light-matter coupling strength, and among solid-state systems, self-assembled semiconductor and hybrid-plasmonic nanowires are amenable to creation of highly-confined optical modes. Following development of unique spectroscopic techniques designed for the nanowire morphology, carefully engineered semiconductor nanowire cavities have recently been tailored to enhance light-matter coupling strength in a manner previously seen in optical microcavities. Much smaller mode volumes in tailored hybrid-plasmonic nanowires have recently allowed for similar breakthroughs, resulting in sub-picosecond excited-state lifetimes and exceptionally high radiative rate enhancement. Here, we review literature on light-matter interactions in semiconductor and hybrid-plasmonic monolithic nanowire optical cavities to highlight recent progress made in tailoring light-matter coupling strengths. Beginning with a discussion of relevant concepts from optical physics, we will discuss how our knowledge of light-matter coupling has evolved with our ability to produce ever-shrinking optical mode volumes, shifting focus from bulk materials to optical microcavities, before moving on to recent results obtained from semiconducting nanowires. PMID:25093385

Metal-Insulator-Semiconductor Photodetectors

PubMed Central

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

High-sensitivity brain SPECT system using cadmium telluride (CdTe) semiconductor detector and 4-pixel matched collimator.

PubMed

Suzuki, Atsuro; Takeuchi, Wataru; Ishitsu, Takafumi; Tsuchiya, Katsutoshi; Morimoto, Yuichi; Ueno, Yuichiro; Kobashi, Keiji; Kubo, Naoki; Shiga, Tohru; Tamaki, Nagara

2013-11-07

For high-sensitivity brain imaging, we have developed a two-head single-photon emission computed tomography (SPECT) system using a CdTe semiconductor detector and 4-pixel matched collimator (4-PMC). The term, '4-PMC' indicates that the collimator hole size is matched to a 2 × 2 array of detector pixels. By contrast, a 1-pixel matched collimator (1-PMC) is defined as a collimator whose hole size is matched to one detector pixel. The performance of the higher-sensitivity 4-PMC was experimentally compared with that of the 1-PMC. The sensitivities of the 1-PMC and 4-PMC were 70 cps/MBq/head and 220 cps/MBq/head, respectively. The SPECT system using the 4-PMC provides superior image resolution in cold and hot rods phantom with the same activity and scan time to that of the 1-PMC. In addition, with half the usual scan time the 4-PMC provides comparable image quality to that of the 1-PMC. Furthermore, (99m)Tc-ECD brain perfusion images of healthy volunteers obtained using the 4-PMC demonstrated acceptable image quality for clinical diagnosis. In conclusion, our CdTe SPECT system equipped with the higher-sensitivity 4-PMC can provide better spatial resolution than the 1-PMC either in half the imaging time with the same administered activity, or alternatively, in the same imaging time with half the activity.

Space Research Results Purify Semiconductor Materials

NASA Technical Reports Server (NTRS)

2010-01-01

While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

PubMed Central

Yu, Chongqi; Wang, Hui

2010-01-01

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures. PMID:22163463

Detector absorptivity measuring method and apparatus

NASA Technical Reports Server (NTRS)

Sheets, R. E. (Inventor)

1976-01-01

A method and apparatus for measuring the absorptivity of a radiation detector by making the detector an integral part of a cavity radiometer are described. By substituting the detector for the surface of the cavity upon which the radiation first impinges a comparison is made between the quantity of radiation incident upon the detector and the quantity reflected from the detector. The difference between the two is a measurement of the amount of radiation absorbed by the detector.

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doan, T. C.; Li, J.; Lin, J. Y.

2016-07-15

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors basedmore » on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.« less

Fabrication of Superconducting Detectors for Studying the Universe

NASA Technical Reports Server (NTRS)

Brown, Ari-David

2012-01-01

Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.

Subnanosecond Scintillation Detector