Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

NASA Astrophysics Data System (ADS)

Marchelek, M.; Grabowska, E.; Klimczuk, T.; Lisowski, W.; Zaleska-Medynska, A.

2017-01-01

A novel synthesis process was used to prepare TiO2 microspheres, TiO2 P-25, SrTiO3 and KTaO3 decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO2 microspheres, P25, SrTiO3 and KTaO3 semiconductors was investigated under UV-vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO3/CdTe-Pt(R) sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO3.

Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walters, Diane M; Antony, Lucas; de Pablo, Juan

High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that themore » structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.« less

Construction of vesicle CdSe nano-semiconductors photocatalysts with improved photocatalytic activity: Enhanced photo induced carriers separation efficiency and mechanism insight.

PubMed

Wen, Jiangsu; Ma, Changchang; Huo, Pengwei; Liu, Xinlin; Wei, Maobin; Liu, Yang; Yao, Xin; Ma, Zhongfei; Yan, Yongsheng

2017-10-01

Visible-light-driven photocatalysis as a green technology has attracted a lot of attention due to its potential applications in environmental remediation. Vesicle CdSe nano-semiconductor photocatalyst are successfully prepared by a gas template method and characterized by a variety of methods. The vesicle CdSe nano-semiconductors display enhanced photocatalytic performance for the degradation of tetracycline hydrochloride, the photodegradation rate of 78.824% was achieved by vesicle CdSe, which exhibited an increase of 31.779% compared to granular CdSe. Such an exceptional photocatalytic capability can be attributed to the unique structure of the vesicle CdSe nano-semiconductor with enhanced light absorption ability and excellent carrier transport capability. Meanwhile, the large surface area of the vesicle CdSe nano-semiconductor can increase the contact probability between catalyst and target and provide more surface-active centers. The photocatalytic mechanisms are analyzed by active species quenching. It indicates that h + and O 2 - are the main active species which play a major role in catalyzing environmental toxic pollutants. Simultaneously, the vesicle CdSe nano-semiconductor had high efficiency and stability. Copyright © 2017. Published by Elsevier B.V.

Lattice matched crystalline substrates for cubic nitride semiconductor growth

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2015-02-24

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

Noncontact, Electrode-free Capacitance/Voltage Measurement Based on General Theory of Metal-Oxide-Semiconductor (MOS) Structure

NASA Astrophysics Data System (ADS)

Sakai, Takamasa; Kohno, Motohiro; Hirae, Sadao; Nakatani, Ikuyoshi; Kusuda, Tatsufumi

1993-09-01

In this paper, we discussed a novel approach to semiconductor surface inspection, which is analysis using the C--V curve measured in a noncontact method by the metal-air-semiconductor (MAIS) technique. A new gap sensing method using the so-called Goos-Haenchen effect was developed to achieve the noncontact C--V measurement. The MAIS technique exhibited comparable sensitivity and repeatability to those of conventional C--V measurement, and hence, good reproducibility and resolution for quantifying the electrically active impurity on the order of 1× 109/cm2, which is better than most spectrometric techniques, such as secondary ion mass spectroscopy (SIMS), electron spectroscopy for chemical analysis (ESCA) and Auger electron spectrocopy (AES) which are time-consuming and destructive. This measurement without preparation of any electrical contact metal electrode suggested, for the first time, the possibility of measuring an intrinsic characteristic of the semiconductor surface, using the examples of a concrete examination.

Fabrication of precision high quality facets on molecular beam epitaxy material

DOEpatents

Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

2001-01-01

Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Dependence of the photoluminescence density on surface preparation and properties of n-type InP

NASA Astrophysics Data System (ADS)

Knauer, A.; Gramlich, S.; Staske, R.

1988-11-01

Comprehensive studies were made of the relationship between the photoluminescence intensity and the effective carrier lifetime, on the one hand, and the quality of the surface treatment of wafers (damage, oxide layer thickness) and the initial properties of a material (surface and bulk defects, inhomogeneity of the dopant concentration), on the other.

Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

NASA Astrophysics Data System (ADS)

Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

2018-04-01

The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

Synthesis and characterization of CdSe/ZnS quantum dots conjugated with poly (ethylene glycol) diamine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bharti, Shivani; Tripathi, S. K., E-mail: surya@pu.ac.in; Kaur, Gurvir

2015-08-28

Bio-functionalization or surface modification is an important technique to obtain biocompatibility in semiconductor nanoparticles for biomedical applications. In this study semiconductor core/shell quantum dots of CdSe/ZnS have been prepared by chemical reduction method and then further PEGylated using Poly(ethylene glycol) diamine of M{sub w} 2000. They were characterized by UV-vis spectroscopy & Fourier transform infrared spectroscopy. The results reveals the successful PEGylation of CdSe/ZnS quantum dots.

Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

PubMed

Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

2014-09-02

The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

PubMed Central

Walters, Diane M.; Lyubimov, Ivan; de Pablo, Juan J.; Ediger, M. D.

2015-01-01

Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. We apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (Tsubstrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by Tsubstrate/Tg, where Tg is the glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. By showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics. PMID:25831545

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH{sub 3} surface preparation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L., E-mail: emily.warren@nrel.gov; Kibbler, Alan E.; France, Ryan M.

2015-08-24

Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH{sub 3} in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH{sub 3} etching quickly removes O and C contaminants at a relatively low temperature (690–740 °C), and creates a single-domain “A-type” As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration ofmore » III-Vs and Si at an industrial scale.« less

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1998-01-01

Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Stable surface passivation process for compound semiconductors

DOEpatents

Ashby, Carol I. H.

2001-01-01

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

Formation and characterization of microcrystalline semiconductor particles on bilayer lipid membranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baral, S.; Zhao, X.K.; Rolandi, R.

Microcrystalline cadmium, indium, copper, and zinc sulfides were generated in situ on the surface of bilayer lipid membranes (BLMs) prepared from bovine-brain phosphatidylserine (PS), glyceryl monooleate (GMO), and a synthetic, polymerizable surfactant (n-C/sub 15/H/sub 31/CO/sub 2/(CH/sub 2/)/sub 2/)/sub 2/N/sup +/(CH/sub 3/)CH/sub 2/C/sub 6/H/sub 4/CH double bond CH/sub 2/, Cl/sup -/ (STYRS). Semiconductor-containing BLMs remained stable for days. Semiconductor formation on the BLM surface was monitored by optical microscopy, voltage-dependent capacitance measurements, and absorption and intracavity-laser-absorption spectroscopy. Band gap excitation of GMO- BLM-incorporated CdS resulted in the development of photovoltage. Irradiation of CdS incorporated into BLMs formed from STYRS (using amore » 350-nm cutoff filter) led to absorption losses due to the styrene moiety in the surfactant. Apparently, CdS sensitized the photopolymerization of STRYS BLMs.« less

Modeling electrochemical deposition inside nanotubes to obtain metal-semiconductor multiscale nanocables or conical nanopores.

PubMed

Lebedev, Konstantin; Mafé, Salvador; Stroeve, Pieter

2005-08-04

Nanocables with a radial metal-semiconductor heterostructure have recently been prepared by electrochemical deposition inside metal nanotubes. First, a bare nanoporous polycarbonate track-etched membrane is coated uniformly with a metal film by electroless deposition. The film forms a working electrode for further deposition of a semiconductor layer that grows radially inside the nanopore when the deposition rate is slow. We propose a new physical model for the nanocable synthesis and study the effects of the deposited species concentration, potential-dependent reaction rate, and nanopore dimensions on the electrochemical deposition. The problem involves both axial diffusion through the nanopore and radial transport to the nanopore surface, with a surface reaction rate that depends on the axial position and the time. This is so because the radial potential drop across the deposited semiconductor layer changes with the layer thickness through the nanopore. Since axially uniform nanocables are needed for most applications, we consider the relative role of reaction and axial diffusion rates on the deposition process. However, in those cases where partial, empty-core deposition should be desirable (e.g., for producing conical nanopores to be used in single nanoparticle detection), we give conditions where asymmetric geometries can be experimentally realized.

Method of physical vapor deposition of metal oxides on semiconductors

DOEpatents

Norton, David P.

2001-01-01

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Employment of a metal microgrid as a front electrode in a sandwich-structured photodetector.

PubMed

Zhang, Junying; Cai, Chao; Pan, Feng; Hao, Weichang; Zhang, Weiwei; Wang, Tianmin

2009-07-01

A highly UV-transparent metal microgrid was prepared and employed as the front electrode in a sandwich-structured ultraviolet (UV) photodetector using TiO(2) thin film as the semiconductor layer. The photo-generated charger carriers travel a shorter distance before reaching the electrodes in comparison with a photodetector using large-spaced interdigitated metal electrodes (where distance between fingers is several to tens of micrometers) on the surface of the semiconductor film. This photodetector responds to UV light irradiation, and the photocurrent intensity increases linearly with the irradiation intensity below 0.2 mW/cm(2).

Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

DOE PAGES

Dalal, Shakeel S.; Walters, Diane M.; Lyubimov, Ivan; ...

2015-03-23

Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. In this paper, we apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (T substrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by T substrate/T g, where T g is themore » glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. Finally, by showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics.« less

Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

PubMed

Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

2018-05-24

Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

PubMed Central

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode. PMID:25814770

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

NASA Astrophysics Data System (ADS)

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2014-09-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode.

High performance thermoelectric materials and methods of preparation

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1997-01-01

Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Spin Coherence at the Nanoscale: Polymer Surfaces and Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Epstein, Arthur J.

2013-09-10

Breakthrough results were achieved during the reporting period in the areas of organic spintronics. (A) For the first time the giant magnetic resistance (GMR) was observed in spin valve with an organic spacer. Thus we demonstrated the ability of organic semiconductors to transport spin in GMR devices using rubrene as a prototype for organic semiconductors. (B) We discovered the electrical bistability and spin valve effect in a ferromagnet /organic semiconductor/ ferromagnet heterojunction. The mechanism of switching between conducting phases and its potential applications were suggested. (C) The ability of V(TCNE)x to inject spin into organic semiconductors such as rubrene wasmore » demonstrated for the first time. The mechanisms of spin injection and transport from and into organic magnets as well through organic semiconductors were elucidated. (D) In collaboration with the group of OSU Prof. Johnston-Halperin we reported the successful extraction of spin polarized current from a thin film of the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). Thus all basic steps for fabrication of room temperature, light weight, flexible all organic spintronic devices were successfully performed. (E) A new synthesis/processing route for preparation of V(TCNE)x enabling control of interface and film thicknesses at the nanoscale was developed at OSU. Preliminary results show these films are higher quality and what is extremely important they are substantially more air stable than earlier prepared V(TCNE)x. In sum the breakthrough results we achieved in the past two years form the basis of a promising new technology, Multifunctional Flexible Organic-based Spintronics (MFOBS). MFOBS technology enables us fabrication of full function flexible spintronic devices that operate at room temperature.« less

Synthesis and spectroscopic properties of silica-dye-semiconductor nanocrystal hybrid particles.

PubMed

Ren, Ting; Erker, Wolfgang; Basché, Thomas; Schärtl, Wolfgang

2010-12-07

We prepared silica-dye-nanocrystal hybrid particles and studied the energy transfer from semiconductor nanocrystals (= donor) to organic dye molecules (= acceptor). Multishell CdSe/CdS/ZnS semiconductor nanocrystals were adsorbed onto monodisperse Stöber silica particles with an outer silica shell of thickness 2-23 nm containing organic dye molecules (Texas Red). The thickness of this dye layer has a strong effect on the energy transfer efficiency, which is explained by the increase in the number of dye molecules homogeneously distributed within the silica shell, in combination with an enhanced surface adsorption of nanocrystals with increasing dye amount. Our conclusions were underlined by comparison of the experimental results with numerically calculated FRET efficiencies and by control experiments confirming attractive interaction between the nanocrystals and Texas Red freely dissolved in solution.

Enhanced near-infrared photocatalysis of NaYF4:Yb, Tm/CdS/TiO2 composites.

PubMed

Guo, Xingyuan; Di, Weihua; Chen, Changfeng; Liu, Chunxu; Wang, Xue; Qin, Weiping

2014-01-21

The previous works by our group (Chem. Commun., 2010, 46, 2304-2306; ACS Catal., 2013, 3, 405-412; Phys. Chem. Chem. Phys., 2013, 15, 14681-14688) have reported the near-infrared-driven photocatalysis of broadband semiconductor TiO2 or ZnO that was combined with upconverting luminescence particles to form a core-shell structure. However, the photocatalytic efficiency is low for this new type of photocatalysts. In this work, NaYF4:Yb,Tm/CdS/TiO2 composites for NIR photocatalysis were prepared by linking CdS and TiO2 nanocrystals on the NaYF4:Yb,Tm microcrystal surfaces. CdS and TiO2 were well interacted to form a heterojunction structure. The energy transfer between NaYF4:Yb,Tm and the semiconductors CdS and TiO2 was investigated by steady-state and dynamic fluorescence spectroscopy. The photocatalytic activities of the as-prepared composites were evaluated by the degradation of methylene blue in aqueous solution upon NIR irradiation. Significantly, it was found that the united adhesions of CdS and TiO2 on the NaYF4:Yb,Tm particle surfaces showed much higher catalytic activities than the individual adhesion of CdS or TiO2 on the NaYF4:Yb,Tm surfaces. This was attributed mainly to the effective separation of the photogenerated electron-hole pairs due to the charge transfer across the CdS-TiO2 interface driven by the band potential difference between them. The presented composite structure of upconverting luminescence materials coupled with narrow/wide semiconductor heterojunctions provides a new model for improved NIR photocatalysis.

Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

NASA Astrophysics Data System (ADS)

Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

2015-09-01

Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

Sintered silver joints via controlled topography of electronic packaging subcomponents

DOEpatents

Wereszczak, Andrew A.

2014-09-02

Disclosed are sintered silver bonded electronic package subcomponents and methods for making the same. Embodiments of the sintered silver bonded EPSs include topography modification of one or more metal surfaces of semiconductor devices bonded together by the sintered silver joint. The sintered silver bonded EPSs include a first semiconductor device having a first metal surface, the first metal surface having a modified topography that has been chemically etched, grit blasted, uniaxial ground and/or grid sliced connected to a second semiconductor device which may also include a first metal surface with a modified topography, a silver plating layer on the first metal surface of the first semiconductor device and a silver plating layer on the first metal surface of the second semiconductor device and a sintered silver joint between the silver plating layers of the first and second semiconductor devices which bonds the first semiconductor device to the second semiconductor device.

Ionic liquids for nano- and microstructures preparation. Part 2: Application in synthesis.

PubMed

Łuczak, Justyna; Paszkiewicz, Marta; Krukowska, Anna; Malankowska, Anna; Zaleska-Medynska, Adriana

2016-01-01

Ionic liquids (ILs) are widely applied to prepare metal nanoparticles and 3D semiconductor microparticles. Generally, they serve as a structuring agent or reaction medium (solvent), however it was also demonstrated that ILs can play a role of a co-solvent, metal precursor, reducing as well as surface modifying agent. The crucial role and possible types of interactions between ILs and growing particles have been presented in the Part 1 of this review paper. Part 2 of the paper gives a comprehensive overview of recent experimental studies dealing with application of ionic liquids for preparation of metal and semiconductor based nano- and microparticles. A wide spectrum of preparation routes using ionic liquids is presented, including precipitation, sol-gel technique, hydrothermal method, nanocasting and ray-mediated methods (microwave, ultrasound, UV-radiation and γ-radiation). It was found that ionic liquids formed of a 1-butyl-3-methylimidazolium [BMIM] combined with tetrafluoroborate [BF4], hexafluorophosphate [PF6], and bis(trifluoromethanesulfonyl)imide [Tf2N] are the most often used ILs in the synthesis of nano- and microparticles, due to their low melting temperature, low viscosity and good transportation properties. Nevertheless, examples of other IL classes with intrinsic nanoparticles stabilizing abilities such as phosphonium and ammonium derivatives are also presented. Experimental data revealed that structure of ILs (both anion and cation type) affects the size and shape of formed metal particles, and in some cases may even determine possibility of particles formation. The nature of the metal precursor determines its affinity to polar or nonpolar domains of ionic liquid, and therefore, the size of the nanoparticles depends on the size of these regions. Ability of ionic liquids to form varied extended interactions with particle precursor as well as other compounds presented in the reaction media (water, organic solvents etc.) provides nano- and microstructures with different morphologies (0D nanoparticles, 1D nanowires, rods, 2D layers, sheets, and 3D features of molecules). ILs interact efficiently with microwave irradiation, thus even small amount of IL can be employed to increase the dielectric constant of nonpolar solvents used in the synthesis. Thus, combining the advantages of ionic liquids and ray-mediated methods resulted in the development of new ionic liquid-assisted synthesis routes. One of the recently proposed approaches of semiconductor particles preparation is based on the adsorption of semiconductor precursor molecules at the surface of micelles built of ionic liquid molecules playing a role of a soft template for growing microparticles. Copyright © 2015 Elsevier B.V. All rights reserved.

Algan/Gan Hemt By Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Garcia Perez, Roman

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

Hexamethyldisilazane Removal with Mesoporous Materials Prepared from Calcium Fluoride Sludge.

PubMed

Kao, Ching-Yang; Lin, Min-Fa; Nguyen, Nhat-Thien; Tsai, Hsiao-Hsin; Chang, Luh-Maan; Chen, Po-Han; Chang, Chang-Tang

2018-05-01

A large amount of calcium fluoride sludge is generated by the semiconductor industry every year. It also requires a high amount of fuel consumption using rotor concentrators and thermal oxidizers to treat VOCs. The mesoporous adsorbent prepared by calcium fluoride sludge was used for VOCs treatment. The semiconductor industry employs HMDS to promote the adhesion of photo-resistant material to oxide(s) due to the formation of silicon dioxide, which blocks porous adsorbents. The adsorption of HMDS (Hexamethyldisiloxane) was tested with mesoporous silica materials synthesized from calcium fluoride (CF-MCM). The resulting samples were characterized by XRD, XRF, FTIR, N2-adsorption-desorption techniques. The prepared samples possessed high specific surface area, large pore volume and large pore diameter. The crystal patterns of CF-MCM were similar with Mobil composite matter (MCM-41) from TEM image. The adsorption capacity of HMDS with CF-MCM was 40 and 80 mg g-1, respectively, under 100 and 500 ppm HMDS. The effects of operation parameters, such as contact time and mixture concentration, on the performance of CF-MCM were also discussed in this study.

Fabrication of Metallic Hollow Nanoparticles

NASA Technical Reports Server (NTRS)

Lillehei, Peter T. (Inventor); Chu, Sang-Hyon (Inventor); Park, Yeonjoon (Inventor); Kim, Jae-Woo (Inventor); Choi, Sr., Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

2016-01-01

Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH.sub.4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

PubMed

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

NASA Astrophysics Data System (ADS)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

Novel nano-semiconductor film layer supported nano-Pd Complex Nanostructured Catalyst Pd/Ⓕ-MeOx/AC for High Efficient Selective Hydrogenation of Phenol to Cyclohexanone.

PubMed

Si, Jiaqi; Ouyang, Wenbing; Zhang, Yanji; Xu, Wentao; Zhou, Jicheng

2017-04-28

Supported metal as a type of heterogeneous catalysts are the most widely used in industrial processes. High dispersion of the metal particles of supported catalyst is a key factor in determining the performance of such catalysts. Here we report a novel catalyst Pd/Ⓕ-MeO x /AC with complex nanostructured, Pd nanoparticles supported on the platelike nano-semiconductor film/activated carbon, prepared by the photocatalytic reduction method, which exhibited high efficient catalytic performance for selective hydrogenation of phenol to cyclohexanone. Conversion of phenol achieved up to more than 99% with a lower mole ratio (0.5%) of active components Pd and phenol within 2 h at 70 °C. The synergistic effect of metal nanoparticles and nano-semiconductors support layer and the greatly increasing of contact interface of nano-metal-semiconductors may be responsible for the high efficiency. This work provides a clear demonstration that complex nanostructured catalysts with nano-metal and nano-semiconductor film layer supported on high specific surface AC can yield enhanced catalytic activity and can afford promising approach for developing new supported catalyst.

Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1998-01-01

New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

Atomically-thin molecular layers for electrode modification of organic transistors

NASA Astrophysics Data System (ADS)

Gim, Yuseong; Kang, Boseok; Kim, Bongsoo; Kim, Sun-Guk; Lee, Joong-Hee; Cho, Kilwon; Ku, Bon-Cheol; Cho, Jeong Ho

2015-08-01

Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs.Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03307a

Reactive codoping of GaAlInP compound semiconductors

DOEpatents

Hanna, Mark Cooper [Boulder, CO; Reedy, Robert [Golden, CO

2008-02-12

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Twenty years of molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cho, A. Y.

1995-05-01

The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

Solid state radiative heat pump

DOEpatents

Berdahl, P.H.

1984-09-28

A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

Quantum dot-decorated semiconductor micro- and nanoparticles: A review of their synthesis, characterization and application in photocatalysis.

PubMed

Bajorowicz, Beata; Kobylański, Marek P; Gołąbiewska, Anna; Nadolna, Joanna; Zaleska-Medynska, Adriana; Malankowska, Anna

2018-06-01

Quantum dot (QD)-decorated semiconductor micro- and nanoparticles are a new class of functional nanomaterials that have attracted considerable interest for their unique structural, optical and electronic properties that result from the large surface-to-volume ratio and the quantum confinement effect. In addition, because of QDs' excellent light-harvesting capacity, unique photoinduced electron transfer, and up-conversion behaviour, semiconductor nanoparticles decorated with quantum dots have been used widely in photocatalytic applications for the degradation of organic pollutants in both the gas and aqueous phases. This review is a comprehensive overview of the recent progress in synthesis methods for quantum dots and quantum dot-decorated semiconductor composites with an emphasis on their composition, morphology and optical behaviour. Furthermore, various approaches used for the preparation of QD-based composites are discussed in detail with respect to visible and UV light-induced photoactivity. Finally, an outlook on future development is proposed with the goal of overcoming challenges and stimulating further research into this promising field. Copyright © 2018 Elsevier B.V. All rights reserved.

Studies on the photo-catalytic activity of semiconductor nanostructures and their gold core-shell on the photodegradation of malathion.

PubMed

Fouad, Dina Mamdouh; Mohamed, Mona Bakr

2011-11-11

This work is devoted to the synthesis of different semiconductor nanoparticles and their metal core-shell nanocomposites such as TiO2, Au/TiO2, ZnO, and Au/ZnO. The morphology and crystal structures of the developed nanomaterials were characterized by transmission electron microscopy (TEM) and x-ray diffraction (XRD). These materials were used as catalysts for the photodegradation of malathion, which is one of the most commonly used pesticides in developing countries. The degradation of 10 ppm malathion under ultraviolet (UV) and visible light in the presence of different synthesized nanocomposites was analyzed using high performance liquid chromatography (HPLC) and UV-visible spectra. A comprehensive study was carried out for the catalytic efficiency of the prepared nanoparticles. Moreover, the effects of different factors that could influence catalytic photodegradation, such as different light sources, surface coverage and the nature of the organic contaminants, were investigated. The results indicate that the core-shell nanocomposite of semiconductor-gold serves as a better catalytic system than the semiconductor nanoparticles themselves.

A General Strategy to Achieve Colossal Permittivity and Low Dielectric Loss Through Constructing Insulator/Semiconductor/Insulator Multilayer Structures

NASA Astrophysics Data System (ADS)

Liu, Kai; Sun, Yalong; Zheng, Fengang; Tse, Mei-Yan; Sun, Qingbo; Liu, Yun; Hao, Jianhua

2018-06-01

In this work, we propose a route to realize high-performance colossal permittivity (CP) by creating multilayer structures of insulator/semiconductor/insulator. To prove the new concept, we made heavily reduced rutile TiO2 via annealing route in Ar/H2 atmosphere. Dielectric studies show that the maximum dielectric permittivity ( 3.0 × 104) of our prepared samples is about 100 times higher than that ( 300) of conventional TiO2. The minimum dielectric loss is 0.03 (at 104-105 Hz). Furthermore, CP is almost independent of the frequency (100-106 Hz) and the temperature (20-350 K). We suggest that the colossal permittivity is attributed to the high carrier concentration of the inner TiO2 semiconductor, while the low dielectric loss is due to the presentation of the insulator layer on the surface of TiO2. The method proposed here can be expanded to other material systems, such as semiconductor Si sandwiched by top and bottom insulator layers of Ga2O3.

Surface passivation process of compound semiconductor material using UV photosulfidation

DOEpatents

Ashby, Carol I. H.

1995-01-01

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

High quality lamella preparation of gallium nitride compound semiconductor using Triple Beam™ system

NASA Astrophysics Data System (ADS)

Sato, T.; Nakano, K.; Matsumoto, H.; Torikawa, S.; Nakatani, I.; Kiyohara, M.; Isshiki, T.

2017-09-01

Gallium nitride (GaN) compound semiconductors have been known to be very sensitive to Ga focused ion beam (FIB) processing. Due to the nature of GaN based materials it is often difficult to produce damage-free lamellae, therefore applying the Triple Beam™ system which incorporates an enhanced method for amorphous removal is presented to make a high quality lamella. The damage or distortion layer thickness of GaN single crystal prepared with 30 kV Ga FIB and 1 kV Ga FIB were about 17 nm and 1.5 nm respectively. The crystallinity at the uppermost surface remained unaffected when the condition of 1 kV Ar ion milling with the Triple Beam™ system was used. The technique of combining traditional Ga FIB processing with an enhanced method for amorphous layer removal by low energy Ar ion milling allows us to analyse the InGaN/GaN interface using aberration corrected scanning transmission electron microscopy at atomic resolution levels.

Method of preparing nitrogen containing semiconductor material

DOEpatents

Barber, Greg D.; Kurtz, Sarah R.

2004-09-07

A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

DOE PAGES

Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; ...

2015-06-04

We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiO x and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstratesmore » an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

Preparation of III-V semiconductor nanocrystals

DOEpatents

Alivisatos, A. Paul; Olshavsky, Michael A.

1996-01-01

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Initial formation behaviour of polypyrrole on single crystal TiO2 through photo-electrochemical reaction.

PubMed

Kawakita, Jin; Weitzel, Matthias

2011-04-01

Hybrid materials of the organic and inorganic semiconductors have a potential to show the better performance in the charge separation at the junction upon the photovoltaic action by the presence of the space charge layer in the inorganic semiconductor. In this study, the photo-anodic polymerization was selected as a fabrication method for the hybrid materials composed of TiO2 and polypyrrole on the basis of some advantages of this method. For the process control of the photo-anodic polymerization, it is important to elucidate the formation and growth mechanisms of the organic polymer. In this study, a flat sheet of single-crystal TiO2 was used as a well-defined surface for preparation of the organic polymer of pyrrole. Photo-anodic polarization behaviour was clarified and polypyrrole was prepared on TiO2. The formation process, especially the initial step was revealed by observation of polypyrrole with atomic force microscope (AFM) and statistical interpretation of the morphology of polypyrrole in the nano-scopic level. The formation process of polypyrrole on the TiO2 surface was summarized; (1) adsorption of precursors, (2) localized formation and growth of polypyrrole under the photo-illumination, and (3) homogenous growth of polypyrrole with the external current application under the photo-illumination.

ZnSe based semiconductor core-shell structures: From preparation to application

NASA Astrophysics Data System (ADS)

Sun, Chengcheng; Gu, Yarong; Wen, Weijia; Zhao, Lijuan

2018-07-01

Inorganic core-shell semiconductor materials have attracted increasing interest in recent years because of the unique structure, stable chemical properties and high performance in devices. With special properties such as a direct band-gap and excellent photoelectrical characteristics, ZnSe based semiconductor core-shell structures are promising materials for applications in such fields as photocatalysts, light-emitting diodes, solar cells, photodetectors, biomedical science and so on. However, few reviews on ZnSe based semiconductor core-shell structures have been reported so far. Therefore this manuscript mainly focuses on the research activities on ZnSe based semiconductor core-shell composites including various preparation methods and the applications of these core-shell structures, especially in photocatalysts, light emitting, solar cells and photodetectors. The possibilities and limitations of studies on ZnSe based semiconductor core-shell composites are also highlighted.

Quantifying the density of surface capping ligands on semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Zhan, Naiqian; Palui, Goutam; Merkl, Jan-Philip; Mattoussi, Hedi

2015-03-01

We have designed a new set of coordinating ligands made of a lipoic acid (LA) anchor and poly(ethylene glycol) (PEG) hydrophilic moiety appended with a terminal aldehyde for the surface functionalization of QDs. This ligand design was combined with a recently developed photoligation strategy to prepare hydrophilic CdSe-ZnS QDs with good control over the fraction of intact aldehyde (-CHO) groups per nanocrystal. We further applied the efficient hydrazone ligation to react aldehyde-QDs with 2-hydrazinopyridine (2-HP). This covalent modification produces QD-conjugates with a well-defined absorption feature at 350 nm ascribed to the hydrazone chromophore. We exploited this unique optical signature to accurately measure the number of aldehyde groups per QD when the fraction of LA-PEG-CHO per nanocrystal was varied. This allowed us to extract an estimate for the number of LA-PEG ligands per QD. These results suggest that hydrazone ligation has the potential to provide a simple and general analytical method to estimate the number of surface ligands for a variety of nanocrystals such as metal, metal oxide and semiconductor nanocrystals.

Preparation of III-V semiconductor nanocrystals

DOEpatents

Alivisatos, A.P.; Olshavsky, M.A.

1996-04-09

Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

NASA Astrophysics Data System (ADS)

Nakamura, Daisuke; Kimura, Taishi; Narita, Tetsuo; Suzumura, Akitoshi; Kimoto, Tsunenobu; Nakashima, Kenji

2017-11-01

A novel sintered tantalum carbide coating (SinTaC) prepared via a wet ceramic process is proposed as an approach to reducing the production cost and improving the crystal quality of bulk-grown crystals and epitaxially grown films of wide-bandgap semiconductors. Here, we verify the applicability of the SinTaC components as susceptors for chemical vapor deposition (CVD)-SiC and metal-organic chemical vapor deposition (MOCVD)-GaN epitaxial growth in terms of impurity incorporation from the SinTaC layers and also clarify the surface-roughness controllability of SinTaC layers and its advantage in CVD applications. The residual impurity elements in the SinTaC layers were confirmed to not severely incorporate into the CVD-SiC and MOCVD-GaN epilayers grown using the SinTaC susceptors. The quality of the epilayers was also confirmed to be equivalent to that of epilayers grown using conventional susceptors. Furthermore, the surface roughness of the SinTaC components was controllable over a wide range of average roughness (0.4 ≤ Ra ≤ 5 μm) and maximum height roughness (3 ≤ Rz ≤ 36 μm) through simple additional surface treatment procedures, and the surface-roughened SinTaC susceptor fabricated using these procedures was predicted to effectively reduce thermal stress on epi-wafers. These results confirm that SinTaC susceptors are applicable to epitaxial growth processes and are advantageous over conventional susceptor materials for reducing the epi-cost and improving the quality of epi-wafers.

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

PubMed

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

Photovoltaic healing of non-uniformities in semiconductor devices

DOEpatents

Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

2006-08-29

A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO₂ Magnetic Semiconductors.

PubMed

Fan, Junpeng; Menéndez, Enric; Guerrero, Miguel; Quintana, Alberto; Weschke, Eugen; Pellicer, Eva; Sort, Jordi

2017-10-25

The origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO₂ powders, prepared by hard-templating, have been unraveled. Whereas, both oxygen vacancies and Fe-based impurity phases could be a plausible explanation for the observed room temperature ferromagnetism, the low temperature magnetism is mainly and unambiguously arising from the nanoscale nature of the formed antiferromagnetic CuO, which results in a net magnetization that is reminiscent of ferromagnetic behavior. This is ascribed to uncompensated spins and shape-mediated spin canting effects. The reduced blocking temperature, which resides between 30 and 5 K, and traces of vertical shifts in the hysteresis loops confirm size effects in CuO. The mesoporous nature of the system with a large surface-to-volume ratio likely promotes the occurrence of uncompensated spins, spin canting, and spin frustration, offering new prospects in the use of magnetic semiconductors for energy-efficient spintronics.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, M.W.

1990-06-19

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, Mark W.

1990-01-01

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Development of cadmium-free quantum dot for intracellular labelling through electroporation or lipid-calcium-phosphate

NASA Astrophysics Data System (ADS)

Liu, Ying-Feng; Hung, Wei-Ling; Hou, Tzh-Yin; Huang, Hsiu-Ying; Lin, Cheng-An J.

2016-04-01

Traditional fluorescent labelling techniques has severe photo-bleaching problem such as organic dyes and fluorescent protein. Quantum dots made up of traditional semiconductor (CdSe/ZnS) material has sort of biological toxicity. This research has developed novel Cd-free quantum dots divided into semiconductor (Indium phosphide, InP) and noble metal (Gold). Former has lower toxicity compared to traditional quantum dots. Latter consisting of gold (III) chloride (AuCl3) and toluene utilizes sonochemical preparation and different stimulus to regulate fluorescent wavelength. Amphoteric macromolecule surface technology and ligand Exchange in self-Assembled are involved to develop hydrophilic nanomaterials which can regulate the number of grafts per molecule of surface functional groups. Calcium phosphate (CaP) nanoparticle (NP) with an asymmetric lipid bilayer coating technology developed for intracellular delivery and labelling has synthesized Cd-free quantum dots possessing high brightness and multi-fluorescence successfully. Then, polymer coating and ligand exchange transfer to water-soluble materials to produce liposome nanomaterials as fluorescent probes and enhancing medical applications of nanotechnology.

Enhanced photocatalytic CO₂-reduction activity of electrospun mesoporous TiO₂ nanofibers by solvothermal treatment.

PubMed

Fu, Junwei; Cao, Shaowen; Yu, Jiaguo; Low, Jingxiang; Lei, Yongpeng

2014-06-28

Photocatalytic reduction of CO2 into renewable hydrocarbon fuels using semiconductor photocatalysts is considered as a potential solution to the energy deficiency and greenhouse effect. In this work, mesoporous TiO2 nanofibers with high specific surface areas and abundant surface hydroxyl groups are prepared using an electrospinning strategy combined with a subsequent calcination process, followed by a solvothermal treatment. The solvothermally treated mesoporous TiO2 nanofibers exhibit excellent photocatalytic performance on CO2 reduction into hydrocarbon fuels. The significantly improved photocatalytic activity can be attributed to the enhanced CO2 adsorption capacity and the improved charge separation after solvothermal treatment. The highest activity is achieved for the sample with a 2-h solvothermal treatment, showing 6- and 25-fold higher CH4 production rate than those of TiO2 nanofibers without solvothermal treatment and P25, respectively. This work may also provide a prototype for studying the effect of solvothermal treatment on the structure and photocatalytic activity of semiconductor photocatalysts.

Optically switched graphene/4H-SiC junction bipolar transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.

A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on amore » first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.« less

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

NASA Technical Reports Server (NTRS)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Metal-chelate dye-controlled organization of Cd32S14(SPh)40(4-) nanoclusters into three-dimensional molecular and covalent open architecture.

PubMed

Zheng, Nanfeng; Lu, Haiwei; Bu, Xianhui; Feng, Pingyun

2006-04-12

Chalcogenide II-VI nanoclusters are usually prepared as isolated clusters and have defied numerous efforts to join them into covalent open-framework architecture with conventional templating methods such as protonated amines or inorganic cations commonly used to direct the formation of porous frameworks. Herein, we report the first templated synthesis of II-VI covalent superlattices from large II-VI tetrahedral clusters (i.e., [Cd32S14(SPh)38]2-). Our method takes advantage of low charge density of metal-chelate dyes that is a unique match with three-dimensional II-VI semiconductor frameworks in charge density, surface hydrophilicity-hydrophobicity, and spatial organization. In addition, metal-chelate dyes also serve to tune the optical properties of resulting dye semiconductor composite materials.

Solid state radiative heat pump

DOEpatents

Berdahl, Paul H.

1986-01-01

A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.

Surface breakdown igniter for mercury arc devices

DOEpatents

Bayless, John R.

1977-01-01

Surface breakdown igniter comprises a semiconductor of medium resistivity which has the arc device cathode as one electrode and has an igniter anode electrode so that when voltage is applied between the electrodes a spark is generated when electrical breakdown occurs over the surface of the semiconductor. The geometry of the igniter anode and cathode electrodes causes the igniter discharge to be forced away from the semiconductor surface.

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

DOEpatents

Hansen, W.L.; Haller, E.E.

1980-09-19

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Charge carrier transport and optical properties of SAM-induced conducting channel in organic semiconductors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

2009-03-01

Certain types of self-assembled monolayers (SAM) grown directly at the surface of organic semiconductors can induce a high surface conductivity in these materials [1]. For example, the conductivity induced by perfluorinated alkyl silanes in organic molecular crystals approaches 10 to -5 Siemens per square. The observed large electronic effect opens new opportunities for nanoscale surface functionalization of organic semiconductors and provides experimental access to the regime of high carrier density. Here, we will discuss temperature variable measurements of SAM-induced conductivity in several types of organic semiconductors. [1]. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, ``Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers'', Nature Mat. 7, 84 (2008).

Electrochemical characterization of bilayer lipid membrane-semiconductor junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xiao Kang; Baral, S.; Fendler, J.H.

Three different systems of glyceryl monooleate (GMO), bilayer lipid membrane (BLM) supported semiconductor particles have been prepared and characterized. A single composition of particulate semiconductor deposited only on one side of the BLM constituted system A, two different compositions of particulate semiconductors sequentially deposited on the same side of the BLM represented system B, and two different compositions of particulate semiconductors deposited on the opposite sides of the BLM made up system C.

Gamma ray detector modules

NASA Technical Reports Server (NTRS)

Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

2009-01-01

A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

PubMed Central

2011-01-01

Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs and ohmic contacts on blank surfaces. Forward and reverse current-voltage characteristics of the diodes showed high rectification ratio and high Schottky barrier heights, giving evidence of very small Fermi level pinning. A large increase of current was observed after exposing diodes to flow of gas blend hydrogen in nitrogen. Current change ratio about 700,000 with 0.1% hydrogen blend was achieved, which is more than two orders-of-magnitude improvement over the best result reported previously. Hydrogen detection limit of the diodes was estimated at 1 ppm H2/N2. The diodes, besides this extremely high sensitivity, have been temporally stable and of inexpensive production. Relatively more expensive GaN diodes have potential for functionality at high temperatures. PMID:21831273

Chemical modifications and bioconjugate reactions of nanomaterials for sensing, imaging, drug delivery and therapy.

PubMed

Biju, Vasudevanpillai

2014-02-07

As prepared nanomaterials of metals, semiconductors, polymers and carbon often need surface modifications such as ligand exchange, and chemical and bioconjugate reactions for various biosensor, bioanalytical, bioimaging, drug delivery and therapeutic applications. Such surface modifications help us to control the physico-chemical, toxicological and pharmacological properties of nanomaterials. Furthermore, introduction of various reactive functional groups on the surface of nanomaterials allows us to conjugate a spectrum of contrast agents, antibodies, peptides, ligands, drugs and genes, and construct multifunctional and hybrid nanomaterials for the targeted imaging and treatment of cancers. This tutorial review is intended to provide an introduction to newcomers about how chemical and bioconjugate reactions transform the surface of nanomaterials such as silica nanoparticles, gold nanoparticles, gold quantum clusters, semiconductor quantum dots, carbon nanotubes, fullerene and graphene, and accordingly formulate them for applications such as biosensing, bioimaging, drug and gene delivery, chemotherapy, photodynamic therapy and photothermal therapy. Nonetheless, controversial reports and our growing concerns about toxicity and pharmacokinetics of nanomaterials suggest the need for not only rigorous in vivo experiments in animal models but also novel nanomaterials for practical applications in the clinical settings. Further reading of original and review articles cited herein is necessary to buildup in-depth knowledge about the chemistry, bioconjugate chemistry and biological applications of individual nanomaterials.

Light emitting diode with porous SiC substrate and method for fabricating

DOEpatents

Li, Ting; Ibbetson, James; Keller, Bernd

2005-12-06

A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

NASA Technical Reports Server (NTRS)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

PubMed

He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

2018-05-30

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

Electrodes for Semiconductor Gas Sensors

PubMed Central

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Tunnel barrier schottky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Rongming; Cao, Yu; Li, Zijian

2018-02-20

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Investigation of photocalalytic activity of ZnO prepared by spray pyrolis with various precursors

NASA Astrophysics Data System (ADS)

Bourfaa, F.; Lamri Zeggar, M.; A, A.; Aida, M. S.; Attaf, N.

2016-03-01

Semiconductor photocatalysts such as ZnO has attracted much attention in recent years due to their various applications for the degradation of organic pollutants in water, air and in dye sensitized photovoltaic solar cell. In the present work, ZnO thin films were prepared by ultrasonic spray pyrolysis by using different precursors namely: acetate, chloride and zinc nitrate in order to investigate their influence on ZnO photocatalytic activity. The films crystalline structure was studied by mean of X- ray diffraction measurements (XRD) and the films surface morphology by Scanning Electron Microscopy (SEM). The films optical properties were studied by mean of UV-visible spectroscopy. The prepared films were tested for the degradation of the red reactive dye largely used in textile industry. As a result, we found that the zinc nitrate is the best precursor to prepare ZnO thin films suitable for a good photocatalytic activity.

Nanocrystal synthesis

DOEpatents

Tisdale, William; Prins, Ferry; Weidman, Mark; Beck, Megan

2016-11-01

A method of preparing monodisperse MX semiconductor nanocrystals can include contacting an M-containing precursor with an X donor to form a mixture, where the molar ratio between the M containing precursor and the X donor is large. Alternatively, if additional X donor is added during the reaction, a smaller ratio between the M containing precursor and the X donor can be used to prepare monodisperse MX semiconductor nanocrystals.

Photoconversion of 4-nitrophenol in the presence of hydrazine with AgNPs-TiO2 nanoparticles prepared by the sol-gel method.

PubMed

Hernández-Gordillo, Agileo; Arroyo, Missael; Zanella, R; Rodríguez-González, V

2014-03-15

The photocatalytic properties of functionalized TiO2 with silver nanoparticles (AgNPs) for the conversion of 4-nitrophenol to 4-aminophenol in the presence of hydrazine were investigated. The TiO2 semiconductor synthesized by the sol-gel method was functionalized with AgNPs at different loadings, and their structural and optical properties were characterized by several techniques. The functionalized TiO2 with 1.5wt% AgNPs presented the highest photocatalytic activity for the conversion of 4-nitrophenol with appropriate hydrazine concentrations (0.5M). The photoefficiency enhancement under UV light irradiation was attributed to the electron transfer from the TiO2 semiconductor surface to the adsorbed acceptor reactant (4-nitrophenol) through the deposited AgNPs. Copyright © 2014 Elsevier B.V. All rights reserved.

Seed-induced growth of flower-like Au-Ni-ZnO metal-semiconductor hybrid nanocrystals for photocatalytic applications.

PubMed

Chen, Yuanzhi; Zeng, Deqian; Cortie, Michael B; Dowd, Annette; Guo, Huizhang; Wang, Junbao; Peng, Dong-Liang

2015-03-25

The combination of metal and semiconductor components in nanoscale to form a hybrid nanocrystal provides an important approach for achieving advanced functional materials with special optical, magnetic and photocatalytic functionalities. Here, a facile solution method is reported for the synthesis of Au-Ni-ZnO metal-semiconductor hybrid nanocrystals with a flower-like morphology and multifunctional properties. This synthetic strategy uses noble and magnetic metal Au@Ni nanocrystal seeds formed in situ to induce the heteroepitaxial growth of semiconducting ZnO nanopyramids onto the surface of metal cores. Evidence of epitaxial growth of ZnO{0001} facets on Ni {111} facets is observed on the heterojunction, even though there is a large lattice mismatch between the semiconducting and magnetic components. Adjustment of the amount of Au and Ni precursors can control the size and composition of the metal core, and consequently modify the surface plasmon resonance (SPR) and magnetic properties. Room-temperature superparamagnetic properties can be achieved by tuning the size of Ni core. The as-prepared Au-Ni-ZnO nanocrystals are strongly photocatalytic and can be separated and re-cycled by virtue of their magnetic properties. The simultaneous combination of plasmonic, semiconducting and magnetic components within a single hybrid nanocrystal furnishes it multifunctionalities that may find wide potential applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O

NASA Astrophysics Data System (ADS)

Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V.; Pillai, Vijayamohanan K.

2014-07-01

Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers. Electronic supplementary information (ESI) available: See DOI: 10.1039/c3nr06917f

Laser ablation caused by geometrically constrained illumination and inventive target design

NASA Astrophysics Data System (ADS)

Inogamov, N. A.; Zhakhovsky, V. V.; Khokhlov, V. A.

2018-01-01

Modern laser technologies use very sophisticated manipulations with (i) a photon cloud forming an irradiation beam and with (ii) disign of a target. E.g. high numerical aperture illumination at very small, diffraction limited conditions is employed for fabrication of the tiny solitary nanoformations on surface of specially prepared thin films deposited onto usually dielectric or semiconductor substrate. In the paper below we list such cases and consider an example with a free standing gold nanofilm modified by tightly focused femtosecond laser pulse.

Cohesive zone modelling of wafer bonding and fracture: effect of patterning and toughness variations

NASA Astrophysics Data System (ADS)

Kubair, D. V.; Spearing, S. M.

2006-03-01

Direct wafer bonding has increasingly become popular in the manufacture of microelectromechanical systems and semiconductor microelectronics components. The success of the bonding process is controlled by variables such as wafer flatness and surface preparation. In order to understand the effects of these variables, spontaneous planar crack propagation simulations were performed using the spectral scheme in conjunction with a cohesive zone model. The fracture-toughness on the bond interface is varied to simulate the effect of surface roughness (nanotopography) and patterning. Our analysis indicated that the energetics of crack propagation is sensitive to the local surface property variations. The patterned wafers are tougher (well bonded) than the unpatterned ones of the same average fracture-toughness.

Dry soldering with hot filament produced atomic hydrogen

DOEpatents

Panitz, Janda K. G.; Jellison, James L.; Staley, David J.

1995-01-01

A system for chemically transforming metal surface oxides to metal that is especially, but not exclusively, suitable for preparing metal surfaces for dry soldering and solder reflow processes. The system employs one or more hot, refractory metal filaments, grids or surfaces to thermally dissociate molecular species in a low pressure of working gas such as a hydrogen-containing gas to produce reactive species in a reactive plasma that can chemically reduce metal oxides and form volatile compounds that are removed in the working gas flow. Dry soldering and solder reflow processes are especially applicable to the manufacture of printed circuit boards, semiconductor chip lead attachment and packaging multichip modules. The system can be retrofitted onto existing metal treatment ovens, furnaces, welding systems and wave soldering system designs.

Biomolecular detection using a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Estephan, Elias; Saab, Marie-Belle; Buzatu, Petre; Aulombard, Roger; Cuisinier, Frédéric J. G.; Gergely, Csilla; Cloitre, Thierry

2010-04-01

In this work, our attention was drawn towards developing affinity-based electrical biosensors, using a MESFET (Metal Semiconductor Field Effect Transistor). Semiconductor (SC) surfaces must be prepared before the incubations with biomolecules. The peptides route was adapted to exceed and bypass the limits revealed by other types of surface modification due to the unwanted unspecific interactions. As these peptides reveal specific recognition of materials, then controlled functionalization can be achieved. Peptides were produced by phage display technology using a library of M13 bacteriophage. After several rounds of bio-panning, the phages presenting affinities for GaAs SC were isolated; the DNA of these specific phages were sequenced, and the peptide with the highest affinity was synthesized and biotinylated. To explore the possibility of electrical detection, the MESFET fabricated with the GaAs SC were used to detect the streptavidin via the biotinylated peptide in the presence of the bovine Serum Albumin. After each surface modification step, the IDS (current between the drain and the source) of the transistor was measured and a decrease in the intensity was detected. Furthermore, fluorescent microscopy was used in order to prove the specificity of this peptide and the specific localisation of biomolecules. In conclusion, the feasibility of producing an electrical biosensor using a MESFET has been demonstrated. Controlled placement, specific localization and detection of biomolecules on a MESFET transistor were achieved without covering the drain and the source. This method of functionalization and detection can be of great utility for biosensing application opening a new way for developing bioFETs (Biomolecular Field-Effect Transistor).

Nanoscale observation of organic thin film by atomic force microscopy

NASA Astrophysics Data System (ADS)

Mochizuki, Shota; Uruma, Takeshi; Satoh, Nobuo; Saravanan, Shanmugam; Soga, Tetsuo

2017-08-01

Organic photovoltaics (OPVs) fabricated using organic semiconductors and hybrid solar cells (HSCs) based on organic semiconductors/quantum dots (QDs) have been attracting significant attention owing to their potential use in low-cost solar energy-harvesting applications and flexible, light-weight, colorful, large-area devices. In this study, we observed and evaluated the surface of a photoelectric conversion layer (active layer) of the OPVs and HSCs based on phenyl-C61-butyric acid methyl ester (PCBM), poly(3-hexylthiophene) (P3HT), and zinc oxide (ZnO) nanoparticles. The experiment was performed using atomic force microscopy (AFM) combined with a frequency modulation detector (FM detector) and a contact potential difference (CPD) detection circuit. We experimentally confirmed the changes in film thickness and surface potential, as affected by the ZnO nanoparticle concentration. From the experimental results, we confirmed that ZnO nanoparticles possibly affect the structures of PCBM and P3HT. Also, we prepared an energy band diagram on the basis of the observation results, and analyzed the energy distribution inside the active layer.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric [Concord, MA; Shen, Mengyan [Arlington, MA

2008-10-28

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric; Shen, Mengyan

2015-09-15

The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric , Shen; Mengyan, [Belmont, MA

2011-02-08

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

PubMed

Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J

2017-10-09

One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondarenko, V. B., E-mail: enter@spbstu.ru; Filimonov, A. V.

2015-09-15

Natural irregularities of the electric potential on the surface of a semiconductor under conditions of the partial self-assembly of electrically active defects, i.e., on the formation of donor–acceptor pairs in depletion layers, are studied. The amplitude and character of the spatial distribution of the chaotic potential on the surface of a semiconductor in the cases of localized and delocalized states are determined. The dependence of the amplitude of the chaotic potential on the degree of compensation of the semiconductor is obtained.

Photocatalytic CO2 reduction over SrTiO3: Correlation between surface structure and activity

NASA Astrophysics Data System (ADS)

Luo, Chao; Zhao, Jie; Li, Yingxuan; Zhao, Wen; Zeng, Yubin; Wang, Chuanyi

2018-07-01

Perovskite oxide SrTiO3 is a promising semiconductor photocatalyst for CO2 reduction, which has two possible chemical surfaces-TiO2-terminated and SrO-terminated surfaces. Up to now, the effect of chemical surface and its modification on CO2 adsorption, activation and sequential photocatalytic reduction is not established. In the work, SrTiO3, surface-Ti-rich SrTiO3 and Sr(OH)2-decorated SrTiO3 were prepared and their structural, surface, and optical properties and photocatalytic activity were explored. It is found that the absorption edge of surface-Ti-rich SrTiO3 shifted toward visible-light region as compared with that of the other two photocatalysts, which is attributed to the decreased Ti 3d ground-state level at the surface. Bicarbonate- (HCO3-) and bidentate carbonate-like (b-CO3=) species are the main species for CO2 adsorption on the surface-Ti-rich SrTiO3, whereas, besides HCO3- and b-CO3=, plenty of monodentate carbonate-like species (m-CO3=) that has relatively low reactivity is present on the SrTiO3 and Sr(OH)2-decorated photocatalysts. As a result, the surface-Ti-rich SrTiO3 exhibits the highest activity for CO2 reduction. Furthermore, although Sr(OH)2-decoration and SrO-terminated surfaces facilitate CO2 fixing, the produced surface species are attached to the weakly active Sr ions, giving rise to the lower reactivity. The present work might supply a guide for designing highly active perovskite-type semiconductors for photocatalysis.

Low energy positrons as probes of reconstructed semiconductor surfaces.

NASA Astrophysics Data System (ADS)

Fazleev, Nail G.; Weiss, Alex H.

2007-03-01

Positron probes of semiconductor surfaces that play a fundamental role in modern science and technology are capable to non-destructively provide information that is both unique to the probe and complimentary to that extracted using other more standard techniques. We discuss recent progress in studies of the reconstructed Si(100), Si(111), Ge(100), and Ge(111) surfaces, clean and exposed to hydrogen and oxygen, using a surface characterization technique, Positron-Annihilation-Induced Auger-Electron Spectroscopy (PAES). Experimental PAES results are analyzed by performing first-principles calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons for the reconstructed surfaces, taking into account discrete lattice effects, the electronic reorganization due to bonding, and charge redistribution effects at the surface. Effects of the hydrogen and oxygen adsorption on semiconductor surfaces on localization of positron surface state wave functions and annihilation characteristics are also analyzed. Theoretical calculations confirm that PAES intensities, which are proportional to annihilation probabilities of the surface trapped positrons that results in a core hole, are sensitive to the crystal face, surface structure and elemental content of the semiconductors.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

PubMed

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-12-05

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

PubMed Central

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-01-01

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal–semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω−1 cm−1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2. PMID:26710105

Photovoltaic-thermal collectors

DOEpatents

Cox, III, Charles H.

1984-04-24

A photovoltaic-thermal solar cell including a semiconductor body having antireflective top and bottom surfaces and coated on each said surface with a patterned electrode covering less than 10% of the surface area. A thermal-absorbing surface is spaced apart from the bottom surface of the semiconductor and a heat-exchange fluid is passed between the bottom surface and the heat-absorbing surface.

Tungsten coating for improved wear resistance and reliability of microelectromechanical devices

DOEpatents

Fleming, James G.; Mani, Seethambal S.; Sniegowski, Jeffry J.; Blewer, Robert S.

2001-01-01

A process is disclosed whereby a 5-50-nanometer-thick conformal tungsten coating can be formed over exposed semiconductor surfaces (e.g. silicon, germanium or silicon carbide) within a microelectromechanical (MEM) device for improved wear resistance and reliability. The tungsten coating is formed after cleaning the semiconductor surfaces to remove any organic material and oxide film from the surface. A final in situ cleaning step is performed by heating a substrate containing the MEM device to a temperature in the range of 200-600 .degree. C. in the presence of gaseous nitrogen trifluoride (NF.sub.3). The tungsten coating can then be formed by a chemical reaction between the semiconductor surfaces and tungsten hexafluoride (WF.sub.6) at an elevated temperature, preferably about 450.degree. C. The tungsten deposition process is self-limiting and covers all exposed semiconductor surfaces including surfaces in close contact. The present invention can be applied to many different types of MEM devices including microrelays, micromirrors and microengines. Additionally, the tungsten wear-resistant coating of the present invention can be used to enhance the hardness, wear resistance, electrical conductivity, optical reflectivity and chemical inertness of one or more semiconductor surfaces within a MEM device.

Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

NASA Astrophysics Data System (ADS)

Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

2016-03-01

High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O.

PubMed

Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V; Pillai, Vijayamohanan K

2014-08-07

Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, "as grown" CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ∼ 470 μA cm(-2)) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.

Enhanced photocatalytic hydrogen production on three-dimensional gold butterfly wing scales/CdS nanoparticles

NASA Astrophysics Data System (ADS)

Fang, Jing; Song, Guofen; Liu, Qinglei; Zhang, Wang; Gu, Jiajun; Su, Yishi; Su, Huilan; Guo, Cuiping; Zhang, Di

2018-01-01

Photocatalytic water splitting via utilizing various semiconductors is recognized as a promising way for hydrogen production. Plasmonic metals with sub-micrometer textures can improve the photocatalytic performance of semiconductors via a localized surface plasmon resonance (LSPR) process. Moreover, arrays of multilayer metallic structures can help generate strong LSPR. However, artificial synthesis has difficulties in constructing novel multilayer metallic arrays down to nanoscales. Here, we use three dimensional (3D) scales from Morpho didius forewings (M) to prepare 3D Au-wings with intact hierarchical bio-structures. For comparison, we use Troides helena forewings (T) which are known for their antireflection quasi-honeycomb structures resulting in strong light absorbing ability. Results show that multilayer rib structures of Au-M can significantly amplify the LSPR of 3D Au and thus can efficiently help the photocatalytic process (9-fold increase). This amplification effect is obviously more superior to the straightforward enhancement of the absorption of incident light (Au-T, 5-fold increase). Thus, our study provides the possibility to prepare highly efficient plasmonic photocatalysts (possessing 3D multilayer rib structures) via an easy method. This work will also be revealing for plasmonic applications in other fields.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric; Shen, Mengyan

2013-12-03

The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Ergonomic risk factors of work processes in the semiconductor industry in Peninsular Malaysia.

PubMed

Chee, Heng-Leng; Rampal, Krishna Gopal; Chandrasakaran, Abherhame

2004-07-01

A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).

Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples

DTIC Science & Technology

2015-11-13

P Wijewarnasuriya at the Army Research Lab to understand the bandd offsets of HgCdTe infrared detector structures. Especially when a sample is not...Final Report: Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples Report Title A used calibrated...structures i. G15-38 and G15-38 Quantum Dot ---------------------------- 16 Infrared Detector Samples ii. GSU13-MPD-GB1 Heterostructure

Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

PubMed Central

Kangawa, Yoshihiro; Akiyama, Toru; Ito, Tomonori; Shiraishi, Kenji; Nakayama, Takashi

2013-01-01

We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001) with experimental results. In addition, the Ga diffusion length on GaAs(001) during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed. PMID:28811438

[Progress in the application of laser ablation ICP-MS to surface microanalysis in material science].

PubMed

Zhang, Yong; Jia, Yun-hai; Chen, Ji-wen; Shen, Xue-jing; Liu, Ying; Zhao, Leiz; Li, Dong-ling; Hang, Peng-cheng; Zhao, Zhen; Fan, Wan-lun; Wang, Hai-zhou

2014-08-01

In the present paper, apparatus and theory of surface analysis is introduced, and the progress in the application of laser ablation ICP-MS to microanalysis in ferrous, nonferrous and semiconductor field is reviewed in detail. Compared with traditional surface analytical tools, such as SEM/EDS (scanning electron microscopy/energy dispersive spectrum), EPMA (electron probe microanalysis analysis), AES (auger energy spectrum), etc. the advantage is little or no sample preparation, adjustable spatial resolution according to analytical demand, multi-element analysis and high sensitivity. It is now a powerful complementary method to traditional surface analytical tool. With the development of LA-ICP-MS technology maturing, more and more analytical workers will use this powerful tool in the future, and LA-ICP-MS will be a super star in elemental analysis field just like LIBS (Laser-induced breakdown spectroscopy).

Scalable maskless patterning of nanostructures using high-speed scanning probe arrays

NASA Astrophysics Data System (ADS)

Chen, Chen; Akella, Meghana; Du, Zhidong; Pan, Liang

2017-08-01

Nanoscale patterning is the key process to manufacture important products such as semiconductor microprocessors and data storage devices. Many studies have shown that it has the potential to revolutionize the functions of a broad range of products for a wide variety of applications in energy, healthcare, civil, defense and security. However, tools for mass production of these devices usually cost tens of million dollars each and are only affordable to the established semiconductor industry. A new method, nominally known as "pattern-on-the- y", that involves scanning an array of optical or electrical probes at high speed to form nanostructures and offers a new low-cost approach for nanoscale additive patterning. In this paper, we report some progress on using this method to pattern self-assembled monolayers (SAMs) on silicon substrate. We also functionalize the substrate with gold nanoparticle based on the SAM to show the feasibility of preparing amphiphilic and multi-functional surfaces.

A Survey of Plasmas and Their Applications

NASA Technical Reports Server (NTRS)

Eastman, Timothy E.; Grabbe, C. (Editor)

2006-01-01

Plasmas are everywhere and relevant to everyone. We bath in a sea of photons, quanta of electromagnetic radiation, whose sources (natural and artificial) are dominantly plasma-based (stars, fluorescent lights, arc lamps.. .). Plasma surface modification and materials processing contribute increasingly to a wide array of modern artifacts; e.g., tiny plasma discharge elements constitute the pixel arrays of plasma televisions and plasma processing provides roughly one-third of the steps to produce semiconductors, essential elements of our networking and computing infrastructure. Finally, plasmas are central to many cutting edge technologies with high potential (compact high-energy particle accelerators; plasma-enhanced waste processors; high tolerance surface preparation and multifuel preprocessors for transportation systems; fusion for energy production).

Atomic Chain Electronics

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Saini, Subhash (Technical Monitor)

1998-01-01

Adatom chains, precise structures artificially created on an atomically regulated surface, are the smallest possible candidates for future nanoelectronics. Since all the devices are created by combining adatom chains precisely prepared with atomic precision, device characteristics are predictable, and free from deviations due to accidental structural defects. In this atomic dimension, however, an analogy to the current semiconductor devices may not work. For example, Si structures are not always semiconducting. Adatom states do not always localize at the substrate surface when adatoms form chemical bonds to the substrate atoms. Transport properties are often determined for the entire system of the chain and electrodes, and not for chains only. These fundamental issues are discussed, which will be useful for future device considerations.

Theory of raman scattering from molecules adsorbed at semiconductor surfaces

NASA Astrophysics Data System (ADS)

Ueba, H.

1983-09-01

A theory is presented to calculate the Raman polarizability of an adsorbed molecule at a semiconductor surface, where the electronic excitation in the molecular site interacts with excitons (elementary excitations in the semiconductor) through non-radiative energy transfer between them, in an intermediate state in the Raman scattering process. The Raman polarizability thus calculated is found to exhibit a peak at the energy corresponding to a resonant excitation of excitons, thereby suggesting the possibility of surface enhanced Raman scattering on semiconductor surfaces. The mechanism studied here can also give an explanation of a recent observation of the Raman excitation profiles of p-NDMA and p-DMAAB adsorbed on ZnO or TiO 2, where those profiles were best described by assuming a resonant intermediate state of the exciton transition in the semiconductors. It is also demonstrated that in addition to vibrational Raman scattering, excitonic Raman scattering of adsorbed molecules will occur in the coupled molecule-semiconductor system, where the molecular returns to its ground electronic state by leaving an exciton in the semiconductor. A spectrum of the excitonic Raman scattering is expected to appear in the background of the vibrational Raman band and to be characterized by the electronic structure of excitons. A desirable experiment is suggested for an examination of the theory.

Hybrid anode for semiconductor radiation detectors

DOEpatents

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Dry soldering with hot filament produced atomic hydrogen

DOEpatents

Panitz, J.K.G.; Jellison, J.L.; Staley, D.J.

1995-04-25

A system is disclosed for chemically transforming metal surface oxides to metal that is especially, but not exclusively, suitable for preparing metal surfaces for dry soldering and solder reflow processes. The system employs one or more hot, refractory metal filaments, grids or surfaces to thermally dissociate molecular species in a low pressure of working gas such as a hydrogen-containing gas to produce reactive species in a reactive plasma that can chemically reduce metal oxides and form volatile compounds that are removed in the working gas flow. Dry soldering and solder reflow processes are especially applicable to the manufacture of printed circuit boards, semiconductor chip lead attachment and packaging multichip modules. The system can be retrofitted onto existing metal treatment ovens, furnaces, welding systems and wave soldering system designs. 1 fig.

Mechanochemical activation and gallium and indiaarsenides surface catalycity

NASA Astrophysics Data System (ADS)

Kirovskaya, I. A.; Mironova, E. V.; Umansky, I. V.; Brueva, O. Yu; Murashova, A. O.; Yureva, A. V.

2018-01-01

The present work has been carried out in terms of determining the possibilities for a clearer identification of the active sites nature, intermediate surface compounds nature, functional groups during adsorption and catalysis, activation of the diamond-like semiconductors surface (in particular, the AIIIBV type) based on mechanochemical studies of the “reaction medium (H2O, iso-C3H7OH) - dispersible semiconductor (GaAs, InAs)” systems. As a result, according to the read kinetic curves of dispersion in water, both acidification and alkalinization of the medium have been established and explained; increased activity of the newly formed surface has been noted; intermediate surface compounds, functional groups appearing on the real surface and under H2O adsorption conditions, adsorption and catalytic decomposition of iso-C3H7OH have been found (with explanation of the origin). The unconcealed role of coordinatively unsaturated atoms as active sites of these processes has been shown; the relative catalytic activity of the semiconductors studied has been evaluated. Practical recommendations on the preferred use of gallium arsenide in semiconductor gas analysis and semiconductor catalysis have been given in literature searches, great care should be taken in constructing both.

Plasmon absorption modulator systems and methods

DOEpatents

Kekatpure, Rohan Deodatta; Davids, Paul

2014-07-15

Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.

Apparatus and methods of measuring minority carrier lifetime using a liquid probe

DOEpatents

Li, Jian

2016-04-12

Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.

Method for depositing high-quality microcrystalline semiconductor materials

DOEpatents

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gulyamov, G., E-mail: Gulyamov1949@rambler.ru; Sharibaev, N. U.

2011-02-15

The temporal dependence of thermal generation of electrons from occupied surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure is studied. It is established that, at low temperatures, the derivative of the probability of depopulation of occupied surface states with respect to energy is represented by the Dirac {delta} function. It is shown that the density of states of a finite number of discrete energy levels under high-temperature measurements manifests itself as a continuous spectrum, whereas this spectrum appears discrete at low temperatures. A method for processing the continuous spectrum of the density of surface states is suggested thatmore » method makes it possible to determine the discrete energy spectrum. The obtained results may be conducive to an increase in resolution of the method of non-stationary spectroscopy of surface states.« less

Glial cell adhesion and protein adsorption on SAM coated semiconductor and glass surfaces of a microfluidic structure

NASA Astrophysics Data System (ADS)

Sasaki, Darryl Y.; Cox, Jimmy D.; Follstaedt, Susan C.; Curry, Mark S.; Skirboll, Steven K.; Gourley, Paul L.

2001-05-01

The development of microsystems that merge biological materials with microfabricated structures is highly dependent on the successful interfacial interactions between these innately incompatible materials. Surface passivation of semiconductor and glass surfaces with thin organic films can attenuate the adhesion of proteins and cells that lead to biofilm formation and biofouling of fluidic structures. We have examined the adhesion of glial cells and serum albumin proteins to microfabricated glass and semiconductor surfaces coated with self-assembled monolayers of octadecyltrimethoxysilane and N-(triethoxysilylpropyl)-O- polyethylene oxide urethane, to evaluate the biocompatibility and surface passivation those coatings provide.

Great improvement in pseudocapacitor properties of nickel hydroxide via simple gold deposition

NASA Astrophysics Data System (ADS)

Kim, Sun-I.; Thiyagarajan, Pradheep; Jang, Ji-Hyun

2014-09-01

In this letter, we report a facile approach to improve the capacitor properties of nickel hydroxide (Ni(OH)2) by simply coating gold nanoparticles (Au NPs) on the surface of Ni(OH)2. Au NP-deposited Ni(OH)2 (Au/Ni(OH)2) has been prepared by application of a conventional colloidal coating of Au NPs on the surface of 3D-Ni(OH)2 synthesized via a hydrothermal method. Compared with pristine Ni(OH)2, Au/Ni(OH)2 shows a 41% enhanced capacitance value, excellent rate capacitance behavior at high current density conditions, and greatly improved cycling stability for supercapacitor applications. The specific capacitance of Au/Ni(OH)2 reached 1927 F g-1 at 1 A g-1, which is close to the theoretical capacitance and retained 66% and 80% of the maximum value at a high current density of 20 A g-1 and 5000 cycles while that of pristine Ni(OH)2 was 1363 F g-1 and significantly decreased to 48% and 30%, respectively, under the same conditions. The outstanding performance of Au/Ni(OH)2 as a supercapacitor is attributed to the presence of metal Au NPs on the surface of semiconductor Ni(OH)2; this permits the creation of virtual 3D conducting networks via metal/semiconductor contact, which induces fast electron and ion transport by acting as a bridge between Ni(OH)2 nanostructures, thus eventually leading to significantly improved electrochemical capacitive behaviors, as confirmed by the EIS and I-V characteristic data.In this letter, we report a facile approach to improve the capacitor properties of nickel hydroxide (Ni(OH)2) by simply coating gold nanoparticles (Au NPs) on the surface of Ni(OH)2. Au NP-deposited Ni(OH)2 (Au/Ni(OH)2) has been prepared by application of a conventional colloidal coating of Au NPs on the surface of 3D-Ni(OH)2 synthesized via a hydrothermal method. Compared with pristine Ni(OH)2, Au/Ni(OH)2 shows a 41% enhanced capacitance value, excellent rate capacitance behavior at high current density conditions, and greatly improved cycling stability for supercapacitor applications. The specific capacitance of Au/Ni(OH)2 reached 1927 F g-1 at 1 A g-1, which is close to the theoretical capacitance and retained 66% and 80% of the maximum value at a high current density of 20 A g-1 and 5000 cycles while that of pristine Ni(OH)2 was 1363 F g-1 and significantly decreased to 48% and 30%, respectively, under the same conditions. The outstanding performance of Au/Ni(OH)2 as a supercapacitor is attributed to the presence of metal Au NPs on the surface of semiconductor Ni(OH)2; this permits the creation of virtual 3D conducting networks via metal/semiconductor contact, which induces fast electron and ion transport by acting as a bridge between Ni(OH)2 nanostructures, thus eventually leading to significantly improved electrochemical capacitive behaviors, as confirmed by the EIS and I-V characteristic data. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr02204a

The Property, Preparation and Application of Topological Insulators: A Review

PubMed Central

Tian, Wenchao; Shi, Jing; Wang, Yongkun

2017-01-01

Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI. PMID:28773173

Preparation and characterisation of crystalline tris(acetylacetonato)Fe(III) films grown on p-Si substrate for dielectric applications

NASA Astrophysics Data System (ADS)

Dakhel, A. A.; Ali-Mohamed, A. Y.

2007-02-01

Thin tris(acetylacetonato)iron(III) films were prepared by sublimation in vacuum on glass and p-Si substrates. Then comprehensive studies of X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, AC-conductivity, and dielectric permittivity as a function of frequency and temperature have been performed. The prepared films show a polycrystalline of orthorhombic structure. The optical absorption spectrum of the film was identical with that of the bulk powder layer. For electrical measurements of the complex as insulator, sample in form of metal insulator semiconductor (MIS) structure was prepared and characterised by the measurement of the capacitance and AC-conductance as a function of gate voltage. From those measurements, the state density Dit at insulator/semiconductor interface and the density of the fixed charges in the complex film were determined. It was found that Dit was of order 1010 eV-1/cm2 and the surface charge density in the insulator film was of order 1010 cm-2. The frequency dependence of the electrical conductivity and dielectric properties of MIS structures were studied at room temperature. It was observed that the experimental data follow the correlated barrier-hopping (CBH) model, from which the fundamental absorption edge, the cut off hopping distance, and other parameters of the model were determined. It was found that the capacitance of the complex increases as temperature increases. Generally, the present study shows that the tris(acetylacetonato)iron(III) films grown on p-Si is a promising candidate for low-k dielectric applications, it displays low-k value around 2.0.

Enhancing surface plasmon leakage at the metal/semiconductor interface: towards increased light outcoupling efficiency in organic optoelectronics.

PubMed

Kohl, Jesse; Pantina, Joseph A; O'Carroll, Deirdre M

2014-04-07

The light outcoupling efficiency of organic light-emitting optoelectronic devices is severely limited by excitation of tightly bound surface plasmon polaritons at the metal electrodes. We present a theoretical study of an organic semiconductor-silver-SiO(2) waveguide and demonstrate that by simple tuning of metal film thickness and the emission regime of the organic semiconductor, a significant fraction of surface plasmon polariton mode amplitude is leaked into the active semiconductor layer, thereby decreasing the amount of optical energy trapped by the metal. At visible wavelengths, mode leakage increases by factors of up to 3.8 and 88 by tuning metal film thickness and by addition of gain, respectively.

The preparation method of terahertz monolithic integrated device

NASA Astrophysics Data System (ADS)

Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

2018-01-01

The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

PubMed

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

NASA Astrophysics Data System (ADS)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Thin-film solar cell fabricated on a flexible metallic substrate

DOEpatents

Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

DOEpatents

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Arrays of Ultrathin CdS Nanoflakes with High-Energy Surface for Efficient Gas Detection.

PubMed

Liu, Xiao-Hua; Yin, Peng-Fei; Kulinich, Sergei A; Zhou, Yu-Zhu; Mao, Jing; Ling, Tao; Du, Xi-Wen

2017-01-11

It is fascinating and challenging to endow conventional materials with unprecedented properties. For instance, cadmium sulfide (CdS) is an important semiconductor with excellent light response; however, its potential in gas-sensing was underestimated owing to relatively low chemical activity and poor electrical conductivity. Herein, we demonstrate that an ideal architecture, ultrathin nanoflake arrays (NFAs), can improve significantly gas-sensing properties of CdS material. The CdS NFAs are grown directly on the interdigitated electrode to expose large surface area. Their thickness is reduced below the double Debye length of CdS, permitting to achieve a full depletion of carriers. Particularly, the prepared CdS nanoflakes are enclosed with high-energy {0001} facets exposed, which provides more active sites for gas adsorption. Moreover, the NFAs exhibit the light-trapping effect, which further enhances their gas sensitivity. As a result, the as-prepared CdS NFAs demonstrate excellent gas-sensing and light-response properties, thus being capable of dual gas and light detection.

Niobium pentoxide: a promising surface-enhanced Raman scattering active semiconductor substrate

NASA Astrophysics Data System (ADS)

Shan, Yufeng; Zheng, Zhihui; Liu, Jianjun; Yang, Yong; Li, Zhiyuan; Huang, Zhengren; Jiang, Dongliang

2017-03-01

Surface-enhanced Raman scattering technique, as a powerful tool to identify the molecular species, has been severely restricted to the noble metals. The surface-enhanced Raman scattering substrates based on semiconductors would overcome the shortcomings of metal substrates and promote development of surface-enhanced Raman scattering technique in surface science, spectroscopy, and biomedicine studies. However, the detection sensitivity and enhancement effects of semiconductor substrates are suffering from their weak activities. In this work, a semiconductor based on Nb2O5 is reported as a new candidate for highly sensitive surface-enhanced Raman scattering detection of dye molecules. The largest enhancement factor value greater than 107 was observed with the laser excitation at 633 and 780 nm for methylene blue detection. As far as literature review shows, this is in the rank of the highest sensitivity among semiconductor materials; even comparable to the metal nanostructure substrates with "hot spots". The impressive surface-enhanced Raman scattering activities can be attributed to the chemical enhancement dominated by the photo-induced charge transfer, as well as the electromagnetic enhancement, which have been supported by the density-functional-theory and finite element method calculation results. The chemisorption of dye on Nb2O5 creates a new highest occupied molecular orbital and lowest unoccupied molecular orbital contributed by both fragments in the molecule-Nb2O5 system, which makes the charge transfer more feasible with longer excitation wavelength. In addition, the electromagnetic enhancement mechanism also accounts for two orders of magnitude enhancement in the overall enhancement factor value. This work has revealed Nb2O5 nanoparticles as a new semiconductor surface-enhanced Raman scattering substrate that is able to replace noble metals and shows great potentials applied in the fields of biology related.

Electronic components embedded in a single graphene nanoribbon.

PubMed

Jacobse, P H; Kimouche, A; Gebraad, T; Ervasti, M M; Thijssen, J M; Liljeroth, P; Swart, I

2017-07-25

The use of graphene in electronic devices requires a band gap, which can be achieved by creating nanostructures such as graphene nanoribbons. A wide variety of atomically precise graphene nanoribbons can be prepared through on-surface synthesis, bringing the concept of graphene nanoribbon electronics closer to reality. For future applications it is beneficial to integrate contacts and more functionality directly into single ribbons by using heterostructures. Here, we use the on-surface synthesis approach to fabricate a metal-semiconductor junction and a tunnel barrier in a single graphene nanoribbon consisting of 5- and 7-atom wide segments. We characterize the atomic scale geometry and electronic structure by combined atomic force microscopy, scanning tunneling microscopy, and conductance measurements complemented by density functional theory and transport calculations. These junctions are relevant for developing contacts in all-graphene nanoribbon devices and creating diodes and transistors, and act as a first step toward complete electronic devices built into a single graphene nanoribbon.Adding functional electronic components to graphene nanoribbons requires precise control over their atomic structure. Here, the authors use a bottom-up approach to build a metal-semiconductor junction and a tunnel barrier directly into a single graphene nanoribbon, an exciting development for graphene-based electronic devices.

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

PubMed

Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

2016-06-28

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties

NASA Astrophysics Data System (ADS)

Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

2016-06-01

Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities. Electronic supplementary information (ESI) available: Synthesis and TEM images of pure ZnO nanocrystals. Photocatalytic testing procedures and degradation curves. SEM and TEM images, SAED pattern and EDS spectra and maps of parts of Cu-ZnO hybrid samples. A schematic image of coincident lattice matching between Cu and ZnO. STEM-EDS elemental maps and XRD pattern of the Cu@CuNi-ZnO sample. Comparative synthetic parameters. See DOI: 10.1039/c6nr02055k

Monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Barfknecht, Andrew T. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Optical Fiber Chemical Sensor with Sol-Gel Derived Refractive Material as Transducer for High Temperature Gas Sensing in Clean Coal Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiquan Tao

2006-12-31

The chemistry of sol-gel derived silica and refractive metal oxide has been systematically studied. Sol-gel processes have been developed for preparing porous silica and semiconductor metal oxide materials. Micelle/reversed micelle techniques have been developed for preparing nanometer sized semiconductor metal oxides and noble metal particles. Techniques for doping metal ions, metal oxides and nanosized metal particles into porous sol-gel material have also been developed. Optical properties of sol-gel derived materials in ambient and high temperature gases have been studied by using fiber optic spectroscopic techniques, such as fiber optic ultraviolet/visible absorption spectrometry, fiber optic near infrared absorption spectrometry and fibermore » optic fluorescence spectrometry. Fiber optic spectrometric techniques have been developed for investigating the optical properties of these sol-gel derived materials prepared as porous optical fibers or as coatings on the surface of silica optical fibers. Optical and electron microscopic techniques have been used to observe the microstructure, such as pore size, pore shape, sensing agent distribution, of sol-gel derived material, as well as the size and morphology of nanometer metal particle doped in sol-gel derived porous silica, the nature of coating of sol-gel derived materials on silica optical fiber surface. In addition, the chemical reactions of metal ion, nanostructured semiconductor metal oxides and nanometer sized metal particles with gas components at room temperature and high temperatures have also been investigated with fiber optic spectrometric methods. Three classes of fiber optic sensors have been developed based on the thorough investigation of sol-gel chemistry and sol-gel derived materials. The first group of fiber optic sensors uses porous silica optical fibers doped with metal ions or metal oxide as transducers for sensing trace NH{sub 3} and H{sub 2}S in high temperature gas samples. The second group of fiber optic sensors uses sol-gel derived porous silica materials doped with nanometer particles of noble metals in the form of fiber or coating for sensing trace H{sub 2}, NH{sub 3} and HCl in gas samples at for applications ambient temperature. The third classes of fiber optic sensors use sol-gel derived semiconductor metal oxide coating on the surface of silica optical fiber as transducers for selectively sensing H{sub 2}, CH{sub 4} and CO at high temperature. In addition, optical fiber temperature sensors use the fluorescence signal of rare-earth metal ions doped porous silica optical fiber or the optical absorption signal of thermochromic metal oxide materials coated on the surface of silica optical fibers have also been developed for monitoring gas temperature of corrosive gas. Based on the results obtained from this project, the principle of fiber optic sensor techniques for monitoring matrix gas components as well as trace components of coal gasification derived syngas has been established. Prototype sensors for sensing trace ammonia and hydrogen sulfide in gasification derived syngas have been built up in our laboratory and have been tested using gas samples with matrix gas composition similar to that of gasification derived fuel gas. Test results illustrated the feasibility of these sensors for applications in IGCC processes.« less

Transport Properties of ZnSe- ITO Hetero Junction

NASA Astrophysics Data System (ADS)

Ichibakase, Tsuyoshi

In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The sample that ZnSe was prepared as 3.4 μm in case of ITO-ZnSe sample, has high density level at the junction surface. The ITO-ZnSe junction has two type of diffusion current. However, the ITO-ZnSe sample that ZnSe layer was prepared as 0.1 μm can be assumed as the ohmic contact, and ITO-ZnSe(0.1μm) -CdTe sample shows the avalanche breakdown, and it is considered that the avalanche breakdown occurs in CdTe layer. It is difficult to occur the avalanche breakdown, if ZnSe-CdTe junction has high-density level and CdTe layer has high-density defect. Hence, the ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. It found that ITO-ZnSe(0.1μm) substrate is available for the II-VI compounds semiconductor device through above analysis result.

Kinetics of surfactant-mediated epitaxy of III-V semiconductors

NASA Astrophysics Data System (ADS)

Grandjean, N.; Massies, J.

1996-05-01

Surfactant-mediated epitaxy (SME) of III-V semiconductors is studied in the case of the GaAs(001) growth using Te as surfactant. To account for the strong surface segregation of Te, a phenomenological exchange mechanism is used. This process explains the reduction of the surface diffusion length evidenced by scanning tunneling microscopy (STM). However, this kinetics effect is observed only for restricted growth conditions: the As surface coverage should be sufficient to allow the exchange process. STM results as well as Monte Carlo simulations clearly show that the group-V element surface coverage plays a key role in the kinetics of SME of III-V semiconductors.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Edges in CNC polishing: from mirror-segments towards semiconductors, paper 1: edges on processing the global surface.

PubMed

Walker, David; Yu, Guoyu; Li, Hongyu; Messelink, Wilhelmus; Evans, Rob; Beaucamp, Anthony

2012-08-27

Segment-edges for extremely large telescopes are critical for observations requiring high contrast and SNR, e.g. detecting exo-planets. In parallel, industrial requirements for edge-control are emerging in several applications. This paper reports on a new approach, where edges are controlled throughout polishing of the entire surface of a part, which has been pre-machined to its final external dimensions. The method deploys compliant bonnets delivering influence functions of variable diameter, complemented by small pitch tools sized to accommodate aspheric mis-fit. We describe results on witness hexagons in preparation for full size prototype segments for the European Extremely Large Telescope, and comment on wider applications of the technology.

A New Commercializable Route for the Preparation of Single-Source Precursors for Bulk, Thin-Film, and Nanocrystallite I-III-IV Semiconductors

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Jin, Michael H. C.; Harris, Jerry D.; Fanwick, Philip E.; Hepp, Aloysius F.

2004-01-01

We report a new simplified synthetic procedure for commercial manufacture of ternary single source precursors (SSP). This new synthetic process has been successfully implemented to fabricate known SSPs on bulk scale and the first liquid SSPs to the semiconductors CuInSe2 and AgIn(x)S(y). Single crystal X-ray determination reveals the first unsolvated ternary AgInS SSP. SSPs prepared via this new route have successfully been used in a spray assisted chemical vapor deposition (CVD) process to deposit polycrystalline thin films, and for preparing ternary nanocrystallites.

Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

2008-10-01

The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

Fabricating porous silicon carbide

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.

Semiconductor electrode with improved photostability characteristics

DOEpatents

Frank, A.J.

1985-02-19

An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Semiconductor electrode with improved photostability characteristics

DOEpatents

Frank, Arthur J.

1987-01-01

An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Near-infrared light emitting device using semiconductor nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Proximity charge sensing for semiconductor detectors

DOEpatents

Luke, Paul N; Tindall, Craig S; Amman, Mark

2013-10-08

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Electrical Properties of Reactive Liquid Crystal Semiconductors

NASA Astrophysics Data System (ADS)

McCulloch, Iain; Coelle, Michael; Genevicius, Kristijonas; Hamilton, Rick; Heckmeier, Michael; Heeney, Martin; Kreouzis, Theo; Shkunov, Maxim; Zhang, Weimin

2008-01-01

Fabrication of display products by low cost printing technologies such as ink jet, gravure offset lithography and flexography requires solution processable semiconductors for the backplane electronics. The products will typically be of lower performance than polysilicon transistors, but comparable to amorphous silicon. A range of prototypes are under development, including rollable electrophoretic displays, active matrix liquid crystal displays (AMLCD's), and flexible organic light-emitting diode (OLED) displays. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes the initial evaluation of reactive mesogen semiconductors, which can polymerise within mesophase temperatures, “freezing in” the order in crosslinked domains. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed to facilitate charge transport and provide good oxidative stability, were prepared and their liquid crystalline properties evaluated. Both time-of-flight and field effect transistor devices were prepared and their electrical characterisation reported.

Semiconductor sensors

NASA Technical Reports Server (NTRS)

Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

1977-01-01

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Russell, Stephen D. (Inventor); Garcia, Graham A. (Inventor); Barfknecht, Andrew T. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Filamentation of a surface plasma wave over a semiconductor-free space interface

NASA Astrophysics Data System (ADS)

Kumar, Gagan; Tripathi, V. K.

2007-12-01

A large amplitude surface plasma wave (SPW), propagating over a semiconductor-free space interface, is susceptible to filamentation instability. A small perturbation in the amplitude of the SPW across the direction of propagation exerts a ponderomotive force on free electrons and holes, causing spatial modulation in free carrier density and hence the effective permittivity ɛeff of the semiconductor. The regions with higher ɛeff attract more power from the nieghborhood, leading to the growth of the perturbation. The growth rate increases with the intensity of the surface wave. It decreases with the frequency of the SPW.

Amplification and generation of surface plasmon polaritons in a semiconductor film - dielectric structure

NASA Astrophysics Data System (ADS)

Abramov, A. S.; Zolotovskii, I. O.; Moiseev, S. G.; Sementsov, D. I.

2018-01-01

The peculiarities of propagation and amplification of surface waves of plasmon polariton type in a planar semiconductor film - dielectric structure are considered for the THz frequency region, with allowance for dissipation in a semiconductor. Two spectral regions are found, where the group velocity of surface plasmon polaritons is negative. It is shown that in these regions the structure can be considered as an amplifying waveguide with distributed feedback and a high gain with respect to the reflected and transmitted signals. The possibility of generation of electromagnetic radiation in such structures is established.

The Morphologies of the Semiconductor Oxides and Their Gas-Sensing Properties

PubMed Central

Lv, Xin; Li, Shuang; Wang, Qingji

2017-01-01

Semiconductor oxide chemoresistive gas sensors are widely used for detecting deleterious gases due to low cost, simple preparation, rapid response and high sensitivity. The performance of gas sensor is greatly affected by the morphology of the semiconductor oxide. There are many semiconductor oxide morphologies, including zero-dimensional, one-dimensional, two-dimensional and three-dimensional ones. The semiconductor oxides with different morphologies significantly enhance the gas-sensing performance. Among the various morphologies, hollow nanostructures and core-shell nanostructures are always the focus of research in the field of gas sensors due to their distinctive structural characteristics and superior performance. Herein the morphologies of semiconductor oxides and their gas-sensing properties are reviewed. This review also proposes a potential strategy for the enhancement of gas-sensing performance in the future. PMID:29189714

Subnanosecond Scintillation Detector

NASA Technical Reports Server (NTRS)

Hoenk, Michael (Inventor); Hennessy, John (Inventor); Hitlin, David (Inventor)

2017-01-01

A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.

Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films.

PubMed

Chen, Zhiwen; Jiao, Zheng; Wu, Minghong; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

2012-01-01

Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.

Semiconductor nanocrystal-based phagokinetic tracking

DOEpatents

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

The dual role of sulfur-containing amino acids in the synthesis of IV-VI semiconductor nanocrystals: a mechanochemical approach.

PubMed

Baláž, Peter; Baláž, Matej; Caplovičová, Mária; Zorkovská, Anna; Caplovič, Lubomír; Psotka, Miroslav

2014-01-01

PbS@cystine nanocrystals were synthesized mechanochemically, with lead acetate and L-cystine being used as the lead and sulfur precursors, respectively. The resulting nanocrystals are 22-34 nm in size, well-faceted and octahedral in shape. Characterization by XRD, FT-IR, NMR, FE-SEM, EDS, TEM (HRTEM) and surface area measurement methods showed that the particles are single, defect-free crystals with a high crystallinity. Furthermore, the crystals were prepared using a solvent-free procedure that was performed under ambient temperature and atmospheric pressure.

Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties.

PubMed

Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

2016-06-02

Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.

Electrochemical liquid-liquid-solid (ec-LLS) crystal growth: a low-temperature strategy for covalent semiconductor crystal growth.

PubMed

Fahrenkrug, Eli; Maldonado, Stephen

2015-07-21

This Account describes a new electrochemical synthetic strategy for direct growth of crystalline covalent group IV and III-V semiconductor materials at or near ambient temperature conditions. This strategy, which we call "electrochemical liquid-liquid-solid" (ec-LLS) crystal growth, marries the semiconductor solvation properties of liquid metal melts with the utility and simplicity of conventional electrodeposition. A low-temperature liquid metal (i.e., Hg, Ga, or alloy thereof) acts simultaneously as the source of electrons for the heterogeneous reduction of oxidized semiconductor precursors dissolved in an electrolyte as well as the solvent for dissolution of the zero-valent semiconductor. Supersaturation of the semiconductor in the liquid metal triggers eventual crystal nucleation and growth. In this way, the liquid electrolyte-liquid metal-solid crystal phase boundary strongly influences crystal growth. As a synthetic strategy, ec-LLS has several intrinsic features that are attractive for preparing covalent semiconductor crystals. First, ec-LLS does not require high temperatures, toxic precursors, or high-energy-density semiconductor reagents. This largely simplifies equipment complexity and expense. In practice, ec-LLS can be performed with only a beaker filled with electrolyte and an electrical circuit capable of supplying a defined current (e.g., a battery in series with a resistor). By this same token, ec-LLS is compatible with thermally and chemically sensitive substrates (e.g., plastics) that cannot be used as deposition substrates in conventional syntheses of covalent semiconductors. Second, ec-LLS affords control over a host of crystal shapes and sizes through simple changes in common experimental parameters. As described in detail herein, large and small semiconductor crystals can be grown both homogeneously within a liquid metal electrode and heterogeneously at the interface of a liquid metal electrode and a seed substrate, depending on the particular details chosen for ec-LLS. Third, the rate of introduction of zero-valent materials into the liquid metal is precisely gated with a high degree of resolution by the applied potential/current. The intent of this Account is to summarize the key elements of ec-LLS identified to date, first contextualizing this method with respect to other semiconductor crystal growth methods and then highlighting some unique capabilities of ec-LLS. Specifically, we detail ec-LLS as a platform to prepare Ge and Si crystals from bulk- (∼1 cm(3)), micro- (∼10(-10) cm(3)), and nano-sized (∼10(-16) cm(3)) liquid metal electrodes in common solvents at low temperature. In addition, we describe our successes in the preparation of more compositionally complex binary covalent III-V semiconductors.

Multidimensional Anodized Titanium Foam Photoelectrode for Efficient Utilization of Photons in Mesoscopic Solar Cells.

PubMed

Kang, Jin Soo; Choi, Hyelim; Kim, Jin; Park, Hyeji; Kim, Jae-Yup; Choi, Jung-Woo; Yu, Seung-Ho; Lee, Kyung Jae; Kang, Yun Sik; Park, Sun Ha; Cho, Yong-Hun; Yum, Jun-Ho; Dunand, David C; Choe, Heeman; Sung, Yung-Eun

2017-09-01

Mesoscopic solar cells based on nanostructured oxide semiconductors are considered as a promising candidates to replace conventional photovoltaics employing costly materials. However, their overall performances are below the sufficient level required for practical usages. Herein, this study proposes an anodized Ti foam (ATF) with multidimensional and hierarchical architecture as a highly efficient photoelectrode for the generation of a large photocurrent. ATF photoelectrodes prepared by electrochemical anodization of freeze-cast Ti foams have three favorable characteristics: (i) large surface area for enhanced light harvesting, (ii) 1D semiconductor structure for facilitated charge collection, and (iii) 3D highly conductive metallic current collector that enables exclusion of transparent conducting oxide substrate. Based on these advantages, when ATF is utilized in dye-sensitized solar cells, short-circuit photocurrent density up to 22.0 mA cm -2 is achieved in the conventional N719 dye-I 3 - /I - redox electrolyte system even with an intrinsically inferior quasi-solid electrolyte. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials

NASA Astrophysics Data System (ADS)

Wołowski, J.; Badziak, J.; Czarnecka, A.; Parys, P.; Pisarek, M.; Rosinski, M.; Turan, R.; Yerci, S.

This work reports experiment concerning specific applications of implantation of laser-produced ions for production of semiconductor nanocrystals. The investigation was carried out in the IPPLM within the EC STREP `SEMINANO' project. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 μ m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced ions was performed with the use of `time-of-flight' ion diagnostics simultaneously with other diagnostic methods in dependence on laser pulse parameters, illumination geometry and target material. The properties of laser-implanted and modified SiO2 layers on sample surface were characterised with the use of different methods (XPS + ASD, Raman spectroscopy, PL spectroscopy) at the Middle East Technological University in Ankara and at the Warsaw University of Technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.

Modification of Semiconductor Surfaces through Si-N Linkages by Wet-Chemistry Approaches and Modular Functionalization of Zinc Oxide Surfaces for Chemical Protection of Material Morphology

NASA Astrophysics Data System (ADS)

Gao, Fei

Semiconductor substrates are widely used in many applications. Multiple practical uses involving these materials require the ability to tune their physical and chemical properties to adjust those to a specific application. In recent years, surface and interface reactions have affected dramatically device fabrication and material design. Novel surface functionalization techniques with diverse chemical approaches make the desired physical, thermal, electrical, and mechanical properties attainable. Meanwhile, the modified surface can serve as one of the most important key steps for further assembly process in order to make novel devices and materials. In the following chapters, novel chemical approaches to the functionalization of silicon and zinc oxide substrates will be reviewed and discussed. The specific functionalities including amines, azides, and alkynes on surfaces of different materials will be applied to address subsequent attachment of large molecules and assembly processes. This research is aimed to develop new strategies for manipulating the surface properties of semiconductor materials in a controlled way. The findings of these investigations will be relevant for future applications in molecular and nanoelectronics, sensing, and solar energy conversion. The ultimate goals of the projects are: 1) Preparation of an oxygen-and carbon-free silicon surface based exclusively on Si-N linkages for further modification protocols.. This project involves designing the surface reaction of hydrazine on chlorine-terminated silicon surface, introduction of additional functional group through dehydrohalogenation condensation reaction and direct covalent attachment of C60. 2) Demonstrating alternative method to anchor carbon nanotubes to solid substrates directly through the carbon cage.. This project targets surface modification of silicon and gold substrates with amine-terminated organic monolayers and the covalent attachment of nonfunctionalized and carboxylic acid-functionalized carbon nanotubes. 3) Designing a universal method for the modular functionalization of zinc oxide surface for the chemical protection of material morphology.. This project involves surface modification of zinc oxide nanopowder under vacuum condition with propiolic acid, followed by "click" reaction. A combination of spectroscopy and microscopy techniques was utilized to study the surface functionalization and assembly processes. Fourier-transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and time of fight secondary ion mass spectroscopy (ToF-SIMS) were employed to elucidate the chemical structure of the modified surface. Atomic force microscopy (AFM), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were combined to obtain the surface morphological information. Density functional theory (DFT) calculations were applied to confirm the experimental results and to suggest plausible reaction mechanisms. Other complementary techniques for these projects also include nuclear magnetic resonance (NMR) spectroscopy to identify the chemical species on the surface and charge-carrier lifetime measurements to evaluate the electronic property of C60-modified silicon surface.

Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

NASA Astrophysics Data System (ADS)

Kumar, S. Girish; Rao, K. S. R. Koteswara

2017-01-01

Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6, etc., to improve their competence for various environmental applications.

Method and structure for passivating semiconductor material

DOEpatents

Pankove, Jacques I.

1981-01-01

A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

ERIC Educational Resources Information Center

Jones, Kenneth

1979-01-01

Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

Facile synthesis of bismuth oxyhalide nanosheet films with distinct conduction type and photo-induced charge carrier behavior

NASA Astrophysics Data System (ADS)

Jia, Huimin; He, Weiwei; Zhang, Beibei; Yao, Lei; Yang, Xiaokai; Zheng, Zhi

2018-05-01

A modified successive ionic layer adsorption and reaction (SILAR) method was developed to fabricate 2D ordered BiOX (X = CI, Br, I) nanosheet array films on FTO substrates at room temperature. The formation of BiOX films were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV-vis absorption spectroscopy, and X-ray photoelectron spectroscopy (XPS). The semiconductor surface states determine the type of semiconductor. Although BiOCI, BiOBr and BiOI belong to the bismuth oxyhalide semiconductor family and possess similar crystal and electronic structures, they show different conductivity types due to their respective surface states. Mott-Schottky curve results demonstrate that the BiOCl and BiOI nanosheet arrays display n-type semiconductor properties, while the BiOBr films exhibit p-type semiconductor properties. Assisted by surface photovoltage (SPV) and transient photovoltage (TPV) techniques, the photoinduced charge transfer dynamics on the surface/interface of the BiOX/FTO nanosheet films were systematically and comparatively investigated. As revealed by the results, both the separation and transfer dynamics of the photo-induced carrier are influenced by film thickness.

Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.

PubMed

López-Gejo, Juan; Arranz, Antonio; Navarro, Alvaro; Palacio, Carlos; Muñoz, Elías; Orellana, Guillermo

2010-02-17

Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O(2) sensitivity of the new device is comparable to those of other ruthenium-based sensor systems. This achievement paves the way to a new generation of integrable ultracompact microsensors that combine semiconductor emitter-probe assemblies.

Isolated molecular dopants in pentacene observed by scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Kahn, Antoine

2009-11-01

Doping is essential to the control of electronic structure and conductivity of semiconductor materials. Whereas doping of inorganic semiconductors is well established, doping of organic molecular semiconductors is still relatively poorly understood. Using scanning tunneling microscopy, we investigate, at the molecular scale, surface and subsurface tetrafluoro-tetracyanoquinodimethane p -dopants in the prototypical molecular semiconductor pentacene. Surface dopants diffuse to pentacene vacancies and appear as negatively charged centers, consistent with the standard picture of an ionized acceptor. Subsurface dopants, however, have the effect of a positive charge, evidence that the donated hole is localized by the parent acceptor counterion, in contrast to the model of doping in inorganic semiconductors. Scanning tunneling spectroscopy shows that the electron potential energy is locally lowered near a subsurface dopant feature, in agreement with the localized hole model.

The influence of surface coating on the properties of water-soluble CdSe and CdSe/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Coto-García, Ana María; Fernández-Argüelles, María T.; Costa-Fernández, José M.; Sanz-Medel, Alfredo; Valledor, Marta; Campo, Juan C.; Ferrero, Francisco J.

2013-01-01

It is well-known that ligands coating the surface of luminescent semiconductor nanocrystals (quantum dots [QDs]) play an important role in the preparation, stability and physical properties of the colloidal QDs in both organic and aqueous media. Here we report on the synthesis and characterization of core (CdSe QDs) and core-shell structured QDs (CdSe/ZnS QDs), both of them stabilized in aqueous medium through different mechanisms of modification of their surface chemistry. The approaches evaluated for QDs transfer to aqueous media were ligand exchange and polymer coating. Experiments were performed using two typical thioalkyl acids as ligands, namely mercaptoacetic acid (QDs-MAA) and 2-mercaptoethanesulphonic acid (QDs-MES), and an amphiphilic polymer (PQDs) based on poly(maleic anhydride) functional groups. The effects of pH (buffer solution), illumination and the presence of ions in the QD environment on the spectroscopic properties of the different synthesized QDs are reported. The stability of the prepared QDs has been comparatively evaluated aimed to elucidate which surface chemistry provides the suitable properties to be employed as fluorescence labels in distinct types of applications. The experimental results and conclusions will be useful for the development of sensitive sensors or assays adopting QDs as fluorescence labels.

Symmetry and Structure of Cubic Semiconductor Surfaces.

PubMed

Jenkins, Stephen J

2017-11-07

A systematic stereographic approach to the description of surface symmetry and structure, applied previously to face-centered cubic, body-centered cubic, and hexagonal close-packed metals, is here extended to the surfaces of diamond-structure and zinc-blende-structure semiconductors. A variety of symmetry-structure combinations are categorized and the chiral properties of certain cases emphasized. A general condition for nonpolarity in the surfaces of zincblende materials is also noted.

InP and GaAs characterization with variable stoichiometry obtained by molecular spray

NASA Technical Reports Server (NTRS)

Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

1979-01-01

Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

Shape control of II-VI semiconductor nanomaterials.

PubMed

Kumar, Sandeep; Nann, Thomas

2006-03-01

Anisotropic II-VI semiconductor nanocrystals and nanoparticles have become important building blocks for (potential) nanotechnological applications. Even though a wide variety of differently shaped nanoparticles of this class can be prepared, the underlying mechanisms are mostly not fully understood. This Review article provides a brief overview of the currently studied shape-evolution mechanisms and the most prominent synthesis methods for such particles, with an aim to provide a fundamental understanding on how different morphologies evolve, and to function as a tool to aid in the preparation of specific nanocrystals.

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

NASA Technical Reports Server (NTRS)

Groves, W. O. (Inventor)

1969-01-01

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Ultrafast direct electron transfer at organic semiconductor and metal interfaces.

PubMed

Xiang, Bo; Li, Yingmin; Pham, C Huy; Paesani, Francesco; Xiong, Wei

2017-11-01

The ability to control direct electron transfer can facilitate the development of new molecular electronics, light-harvesting materials, and photocatalysis. However, control of direct electron transfer has been rarely reported, and the molecular conformation-electron dynamics relationships remain unclear. We describe direct electron transfer at buried interfaces between an organic polymer semiconductor film and a gold substrate by observing the first dynamical electric field-induced vibrational sum frequency generation (VSFG). In transient electric field-induced VSFG measurements on this system, we observe dynamical responses (<150 fs) that depend on photon energy and polarization, demonstrating that electrons are directly transferred from the Fermi level of gold to the lowest unoccupied molecular orbital of organic semiconductor. Transient spectra further reveal that, although the interfaces are prepared without deliberate alignment control, a subensemble of surface molecules can adopt conformations for direct electron transfer. Density functional theory calculations support the experimental results and ascribe the observed electron transfer to a flat-lying polymer configuration in which electronic orbitals are found to be delocalized across the interface. The present observation of direct electron transfer at complex interfaces and the insights gained into the relationship between molecular conformations and electron dynamics will have implications for implementing novel direct electron transfer in energy materials.

Study of Electrical Contacts and Devices in Advanced Semiconductors

NASA Technical Reports Server (NTRS)

Hall, H. P.; Das, K.; Alterovitz, Samuel (Technical Monitor)

2001-01-01

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Nanoscale surface characterization using laser interference microscopy

NASA Astrophysics Data System (ADS)

Ignatyev, Pavel S.; Skrynnik, Andrey A.; Melnik, Yury A.

2018-03-01

Nanoscale surface characterization is one of the most significant parts of modern materials development and application. The modern microscopes are expensive and complicated tools, and its use for industrial tasks is limited due to laborious sample preparation, measurement procedures, and low operation speed. The laser modulation interference microscopy method (MIM) for real-time quantitative and qualitative analysis of glass, metals, ceramics, and various coatings has a spatial resolution of 0.1 nm for vertical and up to 100 nm for lateral. It is proposed as an alternative to traditional scanning electron microscopy (SEM) and atomic force microscopy (AFM) methods. It is demonstrated that in the cases of roughness metrology for super smooth (Ra >1 nm) surfaces the application of a laser interference microscopy techniques is more optimal than conventional SEM and AFM. The comparison of semiconductor test structure for lateral dimensions measurements obtained with SEM and AFM and white light interferometer also demonstrates the advantages of MIM technique.

Programming interfacial energetic offsets and charge transfer in β-Pb 0.33V 2O 5/quantum-dot heterostructures: Tuning valence-band edges to overlap with midgap states

DOE PAGES

Pelcher, Kate E.; Milleville, Christopher C.; Wangoh, Linda; ...

2016-12-06

Here, semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb 0.33V 2O 5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb 0.33V 2O 5 heterostructures prepared by the samemore » methods. Increased valence-band (VB) edge onsets in X-ray photoelectron spectra for CdS/β-Pb 0.33V 2O 5 heterostructures relative to CdSe/β-Pb 0.33V 2O 5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb 0.33V 2O 5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb 0.33V 2O 5 NWs, along with electron transfer into the conduction band of the β-Pb 0.33V 2O 5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 5—30 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore tunable as a function of the mode of attachment of QDs to NWs, provide a vital design tool for designing architectures for solar energy conversion. More generally, the approach developed here suggests that interfacing semiconductor QDs with transition-metal oxide NWs exhibiting intercalative midgap states yields a versatile platform wherein the thermodynamics and kinetics of charge transfer can be systematically modulated to improve the efficiency of charge separation across interfaces.« less

Programming interfacial energetic offsets and charge transfer in β-Pb 0.33V 2O 5/quantum-dot heterostructures: Tuning valence-band edges to overlap with midgap states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelcher, Kate E.; Milleville, Christopher C.; Wangoh, Linda

Here, semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb 0.33V 2O 5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb 0.33V 2O 5 heterostructures prepared by the samemore » methods. Increased valence-band (VB) edge onsets in X-ray photoelectron spectra for CdS/β-Pb 0.33V 2O 5 heterostructures relative to CdSe/β-Pb 0.33V 2O 5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb 0.33V 2O 5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb 0.33V 2O 5 NWs, along with electron transfer into the conduction band of the β-Pb 0.33V 2O 5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 5—30 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore tunable as a function of the mode of attachment of QDs to NWs, provide a vital design tool for designing architectures for solar energy conversion. More generally, the approach developed here suggests that interfacing semiconductor QDs with transition-metal oxide NWs exhibiting intercalative midgap states yields a versatile platform wherein the thermodynamics and kinetics of charge transfer can be systematically modulated to improve the efficiency of charge separation across interfaces.« less

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materialsmore » on the basis of porous silicon and nanostructures with a high aspect ratio.« less

Pure white-light emitting ultrasmall organic-inorganic hybrid perovskite nanoclusters.

PubMed

Teunis, Meghan B; Lawrence, Katie N; Dutta, Poulami; Siegel, Amanda P; Sardar, Rajesh

2016-10-14

Organic-inorganic hybrid perovskites, direct band-gap semiconductors, have shown tremendous promise for optoelectronic device fabrication. We report the first colloidal synthetic approach to prepare ultrasmall (∼1.5 nm diameter), white-light emitting, organic-inorganic hybrid perovskite nanoclusters. The nearly pure white-light emitting ultrasmall nanoclusters were obtained by selectively manipulating the surface chemistry (passivating ligands and surface trap-states) and controlled substitution of halide ions. The nanoclusters displayed a combination of band-edge and broadband photoluminescence properties, covering a major part of the visible region of the solar spectrum with unprecedentedly large quantum yields of ∼12% and photoluminescence lifetime of ∼20 ns. The intrinsic white-light emission of perovskite nanoclusters makes them ideal and low cost hybrid nanomaterials for solid-state lighting applications.

Influence of Nb doping on the phase transition properties of VO2 thin films prepared by ion beam co-sputtering deposition

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Pengfei; Zhao, Lite; Liu, Jiahuan

2016-03-01

The Nb-doped VO2 thin films were successfully prepared on the glass substrates by ion beam co-sputtering at room temperature and post annealing under the air condition. The effects of the preparation processing and Nb doping on the thermal hysteresis loop and phase transition temperature of the VO2 thin films were analyzed by resistancetemperature measurement. The results show that Nb doping significantly changes the surface morphologies of VO2 thin films, and Nb-doped VO2 thin films exhibit VO2(002) preferred orientation growth with greatly improved crystallinity and orientation. Compared with pure VO2, the phase transition temperature of Nb-doped VO2 thin films drops to 40 ºC, and the width of thermal hysteresis loop narrows to 8 ºC. It is demonstrated that Nb-doped VO2 thin films prepared by ion beam co-sputtered at room temperature have an obvious thermal sensitive effect, and keep a good characteristic from metal to semiconductor phase transition.

Charge regulation at semiconductor-electrolyte interfaces.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Layer-by-Layer Molecular Assemblies for Dye-Sensitized Photoelectrosynthesis Cells Prepared by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Degao; Sheridan, Matthew V.; Shan, Bing

2017-08-30

In a Dye Sensitized Photoelectrosynthesis Cell (DSPEC) the relative orientation of catalyst and chromophore play important roles. Here we introduce a new, robust, Atomic Layer Deposition (ALD) procedure for the preparation of assemblies on wide bandgap semiconductors. In the procedure, phosphonated metal complex precursors react with metal ion bridging to an external chromophore or catalyst to give assemblies bridged by Al(III), Sn(IV), Ti(IV), or Zr(IV) metal oxide units as bridges. The procedure has been extended to chromophore-catalyst assemblies for water oxidation catalysis. A SnO2 bridged assembly on SnO2/TiO2 core/shell electrodes undergoes water splitting with an incident photon conversion efficiency (IPCE)more » of 17.1% at 440 nm. Reduction of water at a Ni(II)-based catalyst on NiO films has been shown to give H2. Compared to conventional solution-based procedures, the ALD approach offers significant advantages in scope and flexibility for the preparation of stable surface structures.« less

TEMPO Monolayers on Si(100) Electrodes: Electrostatic Effects by the Electrolyte and Semiconductor Space-Charge on the Electroactivity of a Persistent Radical.

PubMed

Zhang, Long; Vogel, Yan Boris; Noble, Benjamin B; Gonçales, Vinicius R; Darwish, Nadim; Brun, Anton Le; Gooding, J Justin; Wallace, Gordon G; Coote, Michelle L; Ciampi, Simone

2016-08-03

This work demonstrates the effect of electrostatic interactions on the electroactivity of a persistent organic free radical. This was achieved by chemisorption of molecules of 4-azido-2,2,6,6-tetramethyl-1-piperdinyloxy (4-azido-TEMPO) onto monolayer-modified Si(100) electrodes using a two-step chemical procedure to preserve the open-shell state and hence the electroactivity of the nitroxide radical. Kinetic and thermodynamic parameters for the surface electrochemical reaction are investigated experimentally and analyzed with the aid of electrochemical digital simulations and quantum-chemical calculations of a theoretical model of the tethered TEMPO system. Interactions between the electrolyte anions and the TEMPO grafted on highly doped, i.e., metallic, electrodes can be tuned to predictably manipulate the oxidizing power of surface nitroxide/oxoammonium redox couple, hence showing the practical importance of the electrostatics on the electrolyte side of the radical monolayer. Conversely, for monolayers prepared on the poorly doped electrodes, the electrostatic interactions between the tethered TEMPO units and the semiconductor-side, i.e., space-charge, become dominant and result in drastic kinetic changes to the electroactivity of the radical monolayer as well as electrochemical nonidealities that can be explained as an increase in the self-interaction "a" parameter that leads to the Frumkin isotherm.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Dynamic probe of ZnTe(110) surface by scanning tunneling microscopy

PubMed Central

Kanazawa, Ken; Yoshida, Shoji; Shigekawa, Hidemi; Kuroda, Shinji

2015-01-01

The reconstructed surface structure of the II–VI semiconductor ZnTe (110), which is a promising material in the research field of semiconductor spintronics, was studied by scanning tunneling microscopy/spectroscopy (STM/STS). First, the surface states formed by reconstruction by the charge transfer of dangling bond electrons from cationic Zn to anionic Te atoms, which are similar to those of IV and III–V semiconductors, were confirmed in real space. Secondly, oscillation in tunneling current between binary states, which is considered to reflect a conformational change in the topmost Zn–Te structure between the reconstructed and bulk-like ideal structures, was directly observed by STM. Third, using the technique of charge injection, a surface atomic structure was successfully fabricated, suggesting the possibility of atomic-scale manipulation of this widely applicable surface of ZnTe. PMID:27877752

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

NASA Technical Reports Server (NTRS)

Morrison, Andrew D. (Inventor); Daud, Taher (Inventor)

1986-01-01

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

Semiconductor structural damage attendant to contact formation in III-V solar cells

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Weizer, Victor G.

1991-01-01

In order to keep the resistive losses in solar cells to a minimum, it is often necessary for the ohmic contacts to be heat treated to lower the metal-semiconductor contact resistivity to acceptable values. Sintering of the contacts, however can result in extensive mechanical damage of the semiconductor surface under the metallization. An investigation of the detailed mechanisms involved in the process of contact formation during heat treatment may control the structural damage incurred by the semiconductor surface to acceptable levels, while achieving the desired values of contact resistivity for the ohmic contacts. The reaction kinetics of sintered gold contacts to InP were determined. It was found that the Au-InP interaction involves three consecutive stages marked by distinct color changes observed on the surface of the Au, and that each stage is governed by a different mechanism. A detailed description of these mechanisms and options to control them are presented.

Electroless silver plating of the surface of organic semiconductors.

PubMed

Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

2011-10-04

The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor. © 2011 American Chemical Society

Interconnect assembly for an electronic assembly and assembly method therefor

DOEpatents

Gerbsch, Erich William

2003-06-10

An interconnect assembly and method for a semiconductor device, in which the interconnect assembly can be used in lieu of wirebond connections to form an electronic assembly. The interconnect assembly includes first and second interconnect members. The first interconnect member has a first surface with a first contact and a second surface with a second contact electrically connected to the first contact, while the second interconnect member has a flexible finger contacting the second contact of the first interconnect member. The first interconnect member is adapted to be aligned and registered with a semiconductor device having a contact on a first surface thereof, so that the first contact of the first interconnect member electrically contacts the contact of the semiconductor device. Consequently, the assembly method does not require any wirebonds, but instead merely entails aligning and registering the first interconnect member with the semiconductor device so that the contacts of the first interconnect member and the semiconductor device make electrically contact, and then contacting the second contact of the first interconnect member with the flexible finger of the second interconnect member.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

NASA Astrophysics Data System (ADS)

Fu, Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Jürgen

2006-12-01

FeS polycrystalline thin films were prepared on float glass at 500°C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360to600°C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

Conduit for high temperature transfer of molten semiconductor crystalline material

NASA Technical Reports Server (NTRS)

Fiegl, George (Inventor); Torbet, Walter (Inventor)

1983-01-01

A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

Preparation of InYO3 catalyst and its application in photodegradation of molasses fermentation wastewater.

PubMed

Qin, Zuzeng; Liang, Yi; Liu, Zili; Jiang, Weiqing

2011-01-01

An InYO3 photocatalyst was prepared through a precipitation method and used for the degradation of molasses fermentation wastewater. The InYO3 photocatalyst characterized by X-ray diffraction (XRD), UV-Vis diffuse reflectance spectroscopy, surface area and porosimetry. Energy band structures and density of states were achieved using the Cambridge Serial Total Energy package (CASTEP). The results indicated that the photodegradation of molasses fermentation wastewater was significantly enhanced in the presence of InYO3 when compared with PbWO4. The calcination temperature was found to have a significant effect on the photocatalytic activity of InYO3. Specifically, InYO3 calcined at 700 degrees C had a considerably larger surface area and lower reflectance intensity and showed higher photocatalytic activity. The mathematical simulation results indicated that InYO3 is a direct band gap semiconductor, and its conduction band is composed of In 5p and Y 4d orbitals, whereas its valence band is composed of O 2p and In 5s orbitals.

Low temperature junction growth using hot-wire chemical vapor deposition

DOEpatents

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Bi-component semiconductor oxide photoanodes for the photoelectrocatalytic oxidation of organic solutes and vapours: a short review with emphasis to TiO2-WO3 photoanodes.

PubMed

Georgieva, J; Valova, E; Armyanov, S; Philippidis, N; Poulios, I; Sotiropoulos, S

2012-04-15

The use of binary semiconductor oxide anodes for the photoelectrocatalytic oxidation of organic species (both in solution and gas phase) is reviewed. In the first part of the review, the principle of electrically assisted photocatalysis is presented, the preparation methods for the most common semiconductor oxide catalysts are briefly mentioned, while the advantages of appropriately chosen semiconductor combinations for efficient UV and visible (vis) light utilization are highlighted. The second part of the review focuses on the discussion of TiO(2)-WO(3) photoanodes (among the most studied bi-component semiconductor oxide systems) and in particular on coatings prepared by electrodeposition/electrosynthesis or powder mixtures (the focus of the authors' research during recent years). Studies concerning the microscopic, spectroscopic and photoelectrochemical characterization of the catalysts are presented and examples of photoanode activity towards typical dissolved organic contaminants as well as organic vapours are given. Particular emphasis is paid to: (a) The dependence of photoactivity on catalyst morphology and composition and (b) the possibility of carrying out photoelectrochemistry in all-solid cells, thus opening up the opportunity for photoelectrocatalytic air treatment. Copyright © 2011 Elsevier B.V. All rights reserved.

Conjugated polymers/semiconductor nanocrystals hybrid materials--preparation, electrical transport properties and applications.

PubMed

Reiss, Peter; Couderc, Elsa; De Girolamo, Julia; Pron, Adam

2011-02-01

This critical review discusses specific preparation and characterization methods applied to hybrid materials consisting of π-conjugated polymers (or oligomers) and semiconductor nanocrystals. These materials are of great importance in the quickly growing field of hybrid organic/inorganic electronics since they can serve as active components of photovoltaic cells, light emitting diodes, photodetectors and other devices. The electronic energy levels of the organic and inorganic components of the hybrid can be tuned individually and thin hybrid films can be processed using low cost solution based techniques. However, the interface between the hybrid components and the morphology of the hybrid directly influences the generation, separation and transport of charge carriers and those parameters are not easy to control. Therefore a large variety of different approaches for assembling the building blocks--conjugated polymers and semiconductor nanocrystals--has been developed. They range from their simple blending through various grafting procedures to methods exploiting specific non-covalent interactions between both components, induced by their tailor-made functionalization. In the first part of this review, we discuss the preparation of the building blocks (nanocrystals and polymers) and the strategies for their assembly into hybrid materials' thin films. In the second part, we focus on the charge carriers' generation and their transport within the hybrids. Finally, we summarize the performances of solar cells using conjugated polymer/semiconductor nanocrystals hybrids and give perspectives for future developments.

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

NASA Astrophysics Data System (ADS)

de Kergommeaux, Antoine; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-03-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. Invited talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces.

PubMed

Aizawa, Masato; Buriak, Jillian M

2005-06-29

Patterning of semiconductor surfaces is an area of intense interest, not only for technological applications, such as molecular electronics, sensing, cellular recognition, and others, but also for fundamental understanding of surface reactivity, general control over surface properties, and development of new surface reactivity. In this communication, we describe the use of self-assembling block copolymers to direct semiconductor surface chemistry in a spatially defined manner, on the nanoscale. The proof-of-principle class of reactions evaluated here is galvanic displacement, in which a metal ion, M+, is reduced to M0 by the semiconductor, including Si, Ge, InP, and GaAs. The block copolymer chosen has a polypyridine block which binds to the metal ions and brings them into close proximity with the surface, at which point they undergo reaction; the pattern of resulting surface chemistry, therefore, mirrors the nanoscale structure of the parent block copolymer. This chemistry has the added advantage of forming metal nanostructures that result in an alloy or intermetallic at the interface, leading to strongly bound metal nanoparticles that may have interesting electronic properties. This approach has been shown to be very general, functioning on a variety of semiconductor substrates for both silver and gold deposition, and is being extended to organic and inorganic reactions on a variety of conducting, semiconducting, and insulating substrates.

Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

PubMed

Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

2009-12-09

We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

Surface Plasmon-Assisted Solar Energy Conversion.

PubMed

Dodekatos, Georgios; Schünemann, Stefan; Tüysüz, Harun

2016-01-01

The utilization of localized surface plasmon resonance (LSPR) from plasmonic noble metals in combination with semiconductors promises great improvements for visible light-driven photocatalysis, in particular for energy conversion. This review summarizes the basic principles of plasmonic photocatalysis, giving a comprehensive overview about the proposed mechanisms for enhancing the performance of photocatalytically active semiconductors with plasmonic devices and their applications for surface plasmon-assisted solar energy conversion. The main focus is on gold and, to a lesser extent, silver nanoparticles in combination with titania as semiconductor and their usage as active plasmonic photocatalysts. Recent advances in water splitting, hydrogen generation with sacrificial organic compounds, and CO2 reduction to hydrocarbons for solar fuel production are highlighted. Finally, further improvements for plasmonic photocatalysts, regarding performance, stability, and economic feasibility, are discussed for surface plasmon-assisted solar energy conversion.

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

SEM evaluation of metallization on semiconductors. [Scanning Electron Microscope

NASA Technical Reports Server (NTRS)

Fresh, D. L.; Adolphsen, J. W.

1974-01-01

A test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.

Characterization of CdTe and (CdZn)Te detectors with different metal contacts

NASA Astrophysics Data System (ADS)

Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

2013-09-01

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

Computational insights into charge transfer across functionalized semiconductor surfaces

NASA Astrophysics Data System (ADS)

Kearney, Kara; Rockett, Angus; Ertekin, Elif

2017-12-01

Photoelectrochemical water-splitting is a promising carbon-free fuel production method for producing H2 and O2 gas from liquid water. These cells are typically composed of at least one semiconductor photoelectrode which is prone to degradation and/or oxidation. Various surface modifications are known for stabilizing semiconductor photoelectrodes, yet stabilization techniques are often accompanied by a decrease in photoelectrode performance. However, the impact of surface modification on charge transport and its consequence on performance is still lacking, creating a roadblock for further improvements. In this review, we discuss how density functional theory and finite-element device simulations are reliable tools for providing insight into charge transport across modified photoelectrodes.

Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system

DOEpatents

Baldasaro, Paul F; Brown, Edward J; Charache, Greg W; DePoy, David M

2000-01-01

A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).

Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system

DOEpatents

Baldasaro, Paul F; Brown, Edward J; Charache, Greg W; DePoy, David M

2000-09-05

A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).

Surface plasmon oscillations in a semi-bounded semiconductor plasma

NASA Astrophysics Data System (ADS)

M, SHAHMANSOURI; A, P. MISRA

2018-02-01

We study the dispersion properties of surface plasmon (SP) oscillations in a semi-bounded semiconductor plasma with the effects of the Coulomb exchange (CE) force associated with the spin polarization of electrons and holes as well as the effects of the Fermi degenerate pressure and the quantum Bohm potential. Starting from a quantum hydrodynamic model coupled to the Poisson equation, we derive the general dispersion relation for surface plasma waves. Previous results in this context are recovered. The dispersion properties of the surface waves are analyzed in some particular cases of interest and the relative influence of the quantum forces on these waves are also studied for a nano-sized GaAs semiconductor plasma. It is found that the CE effects significantly modify the behaviors of the SP waves. The present results are applicable to understand the propagation characteristics of surface waves in solid density plasmas.

Metal Contacts in Semiconductors.

DTIC Science & Technology

1983-11-01

greater understanding of the role that imperfec- tions, defects etc. play in the formation of Schottk~y barriers and related devices. In section 1 of...these effects. In Section 2 of this report we consider the role of surface defects in the pinning of the Fermi level at free semiconductor surfaces and...in the adsorption and oxidation processes involved when these surfaces interact with gases and metals. The role of imperfections at metal

CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.

InP solar cell with window layer

NASA Technical Reports Server (NTRS)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

NASA Astrophysics Data System (ADS)

Chung, Jeyon; Hyon, Jinho; Park, Kyung-Sun; Cho, Boram; Baek, Jangmi; Kim, Jueun; Lee, Sang Uck; Sung, Myung Mo; Kang, Youngjong

2016-03-01

Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8-133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

Optically pumped lasing and electroluminescence of formamidinium perovskite semiconductors prepared by the cast-capping method

NASA Astrophysics Data System (ADS)

Sasaki, Fumio; Nguyen, Van-Cao; Yanagi, Hisao

2018-03-01

Optically pumped lasing and electroluminescence (EL) have been observed in solution-processed perovskite semiconducting materials of formamidinium lead bromide, CH(NH2)2PbBr3. Microcavities with flat surfaces and sharp edges have been easily obtained by the simple solution process called the “cast-capping method”. The crystals show clear multimode lasing of Fabry-Pérot cavities. The mode intervals are well explained by the optical constants with large dispersions of the materials. We have also fabricated EL devices and obtained clear EL in a single layer of the materials, but the EL intensity has been quenched rapidly.

Methods and devices for fabricating and assembling printable semiconductor elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Methods and devices for fabricating and assembling printable semiconductor elements

DOEpatents

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Solution combustion synthesis of oxide semiconductors

NASA Astrophysics Data System (ADS)

Thomas, Abegayl Lorenda Shara-Lynn

The quest for stable and efficient photocatalytic materials beyond TiO2 and WO3 has over the years led to the development of new materials that possess varied interfacial energetics. This dissertation study focused on using for the first time a novel method, solution combustion synthesis (SCS), to prepare two distinct families of binary metal-based oxide semiconductor materials. Detailed studies on material characteristics and applications were carried out on tungsten- and niobium-based oxide semiconductors with varying principal metals. Initial emphasis was placed on the SCS of tungsten-based oxide semiconductors (ZnWO4, CuWO4, and Ag2WO4). The influence of different tungsten precursor's on the resultant product was of particular relevance to this study, with the most significant effects highlighted. Upon characterization, each sample's photocatalytic activity towards methyl orange dye degradation was studied, and benchmarked against their respective commercial oxide sample, obtained by solid-state ceramic synthesis. Detailed analysis highlighted the importance of the SCS process as a time- and energy-efficient method to produce crystalline nano-sized materials even without additional or excessive heat treatment. It was observed that using different tungstate precursors does influence the structural and morphological make-up of the resulting materials. The as-synthesized tungstate materials showed good photocatalytic performance for the degradation of methyl orange dye, while taking into account specific surface area and adsorbed dye amount on the surface of the material. Like the tungstate's, niobium-based oxide semiconductors CuNb 2O6 and ZnNb2O6 were the first to be synthesized via solution combustion synthesis. Particular attention was placed on the crystal structures formed while using an oxalate niobium precursor during the reaction process. X-ray patterns yielded a multiphase structure for the ZnNb2O6 and a single phase structure for CuNb 2O6. Photoelectrochemical (PEC) measurements were used both as a characterization tool as well as an application for CO2 reduction. The PEC data was consistent with an n-type and p-type semiconductor for ZnNb 2O6 and CuNb2O6 respectively. Good phototelectrochemical behavior was observed for CuNb2O6 with stable, high photocurrents suggesting a suitable material for CO 2 reduction while in a 0.1 M NaHCO3 + CO2 medium. All in all, this dissertation study expounds on metal ion insertion into various structural frameworks (e.g. WO3) which may open sustainable materials chemistry avenues to solar energy conversion and environmental remediation.

Tunable surface plasmon devices

DOEpatents

Shaner, Eric A [Rio Rancho, NM; Wasserman, Daniel [Lowell, MA

2011-08-30

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

Screenable contact structure and method for semiconductor devices

DOEpatents

Ross, Bernd

1980-08-26

An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal frit. The ink is screened onto the semiconductor surface in the desired pattern and is heated to a temperature sufficient to cause the metal frit to become liquid. The metal frit dissolves some of the metal powder and densifies the structure by transporting the dissolved metal powder in a liquid sintering process. The sintering process typically may be carried out in any type of atmosphere. A small amount of dopant or semiconductor material may be added to the ink systems to achieve particular results if desired.

Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

1988-01-01

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

1990-01-01

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

Synthesis and Characterization of Quantum Dots: A Case Study Using PbS

ERIC Educational Resources Information Center

Pan, Yi; Li, Yue Ru; Zhao, Yu; Akins, Daniel L.

2015-01-01

A research project for senior undergraduates of chemistry has been developed to introduce syntheses of a series of monodispersed semiconductor PbS quantum dots (QDs) and their characterization methodologies. In this paper, we report the preparation of monodispersed semiconductor PbS QDs with sizes smaller than the exciton Bohr radius using a…

CATALYTIC PROPERTIES OF SEMICONDUCTORS.

DTIC Science & Technology

SEMICONDUCTORS, CATALYSTS), (*CATALYSIS, REACTION KINETICS), (* SODIUM COMPOUNDS, TUNGSTATES), (*GALLIUM ALLOYS, ARSENIC ALLOYS), (*YTTERBIUM...COMPOUNDS, SILICIDES ), (*GERMANIUM, CATALYSIS), INTERNAL CONVERSION, EXCHANGE REACTIONS, HEAT OF ACTIVATION, THERMODYNAMICS, DEUTERIUM, POWDERS, SURFACES, HYDROGEN

Study of Surface States at the Semiconductor/electrolyte Interface of Liquid-Junction Solar Cells.

NASA Astrophysics Data System (ADS)

Siripala, Withana P.

The existence of surface states at the semiconductor electrolyte interface of photoelectrochemical (PEC) cells plays a major role in determining the performance of the device in regard to the potential distribution and transport mechanisms of photogenerated carriers at the interface. We have investigated the n-TiO(,2)/electrolyte interface using three experimental techniques: relaxation spectrum analysis, photocurrent spectroscopy, and electrolyte electroreflectance (EER) spectroscopy. The effect of Fermi level pinning at the CdIn(,2)SE(,4)/aqueous-polysulfide interface was also studied using EER. Three distinct surface states were observed at the n-TiO(,2)/aqueous-electrolyte interface. The dominant state, which tails from the conduction band edge, is primarily responsible for the surface recombination of photocarriers at the interface. The second surface state, observed at 0.8 eV below the conduction band of TiO(,2), originates in the dark charge transfer intermediates (TiO(,2)-H). It is proposed that the sub-bandgap (SBG) photocurrent-potential behavior is a result of the mechanism of dynamic formation and annihilation of these surface states. The third surface state was at 1.3 eV below the conduction band of TiO(,2), and the SBG EER measurements show this state is "intrinsic" to the surface. These states were detected with SBG EER and impedance measurements in the presence of electrolytes that can adsorb on the surface of TiO(,2). Surface concentration of these states was evaluated with impedance measurements. EER measurements on a CdIn(,2)Se(,4)/polysulfide system have shown that the EER spectrum is sensitive to the surface preparation of the sample. The EER signal was quenched as the surface was driven to strong depletion, owing to Fermi level pinning at the interface in the presence of a high density of surface states. The full analysis of this effect enables us to measure the change in the flatband potential, as a function of the electrode potential, and also the energy distribution of these states.

MIS diode structure in As/+/ implanted CdS

NASA Technical Reports Server (NTRS)

Hutchby, J. A.

1977-01-01

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

Fabrication of Te@Au core-shell hybrids for efficient ethanol oxidation

NASA Astrophysics Data System (ADS)

Jin, Huile; Wang, Demeng; Zhao, Yuewu; Zhou, Huan; Wang, Shun; Wang, Jichang

2012-10-01

Using Au nanoparticles to catalyze the oxidation of alcohols has garnered increasing attention due to its potential application in direct alcohol fuel cells. In this research Te@Au core-shell hybrids were fabricated for the catalytic oxidation of ethanol, where the preparation procedure involved the initial production of Te crystals with different microstructures and the subsequent utilization of the Te crystal as a template and reducing agent for the production of Te@Au hybrids. The as-prepared core-shell hybrids were characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction techniques. Electrochemical measurements illustrate that the hybrids have great electrocatalytic activity and stability toward ethanol oxidation in alkaline media. The enhanced electrocatalytic property may be attributed to the cooperative effects between the metal and semiconductor and the presence of a large number of active sites on the hybrids surface.

Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

PubMed Central

2013-01-01

SiOxNy films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O2 and N2 as gaseous precursors diluted in He. Interface properties of SiOxNy films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density (Dit) and positive fixed charge density (Qf). After forming gas anneal, Dit decreases largely with decreasing N2/O2 flow ratio from 1 to 0.01 while the change of Qf is insignificant. These results suggest that low N2/O2 flow ratio is a key parameter to achieve a low Dit and relatively high Qf, which is effective for field effect passivation of n-type Si surfaces. PMID:23634872

n/p-Type changeable semiconductor TiO2 prepared from NTA

NASA Astrophysics Data System (ADS)

Li, Qiuye; Wang, Xiaodong; Jin, Zhensheng; Yang, Dagang; Zhang, Shunli; Guo, Xinyong; Yang, Jianjun; Zhang, Zhijun

2007-10-01

A novel kind of nano-sized TiO2 (anatase) was obtained by high-temperature (400-700°C) dehydration of nanotube titanic acid (H2Ti2O4(OH)2, NTA). The high-temperature (400-700°C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation (λ≥420 nm, E photon=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light (λ=365 nm, E photon=3.40 eV).

Interfaces of electrical contacts in organic semiconductor devices

NASA Astrophysics Data System (ADS)

Demirkan, Korhan

Progress in organic semiconductor devices relies on better understanding of interfaces as well as material development. The engineering of interfaces that exhibit low resistance, low operating voltage and long-term stability to minimize device degradation is one of the crucial requirements. Photoelectron spectroscopy is a powerful technique to study the metal-semiconductor interfaces, allowing: (i) elucidation of the energy levels of the semiconductor and the contacts that determine Schottky barrier height, (ii) inspection of electrical interactions (such as charge transfer, dipole formation, formation of induced density of states or formation of polaron/bi-polaron states) that effect the energy level alignment, (iii) determination of interfacial chemistry, and (iv) estimation of interface morphology. In this thesis, we have used photoelectron spectroscopy extensively for detailed analysis of the metal organic semiconductor interfaces. In this study, we demonstrate the use of photoelectron spectroscopy for construction of energy level diagrams and display some results related to chemical tailoring of materials for engineering interfaces with lowered Schottky barriers. Following our work on the energy level alignment of poly(p-phenyene vinylene) based organic semiconductors on various substrates [Au, indium tin oxide, Si (with native oxide) and Al (with native oxide)], we tested controlling the energy level alignment by using polar self assembled molecules (SAMs). Photoelectron spectroscopy showed that, by introducing SAMs on the Au surface, we successfully changed the effective work function of Au surface. We found that in this case, the change in the effective work function of the metal surface was not reflected as a shift in the energy levels of the organic semiconductor, as opposed to the results achieved with different substrate materials. To investigate the chemical interactions at the metal/organic interface, we studied the metallization of poly(2-methoxy-5,2'-ethyl-hexyloxy-phenylene vinylene) (MEH-PPV), polystyrene (PS) and ozone treated polystyrene (PS-O3) surfaces by thermal deposition of aluminum. Photoelectron spectroscopy showed the degree of chemical interaction between Al and each polymer, for MEH-PPV, the chemical interactions were mainly through the C-O present in the side chain of the polymer structure. The chemical interaction of Al with polystyrene was less significant, but it showed a dramatic increase after ozone treatment of the polystyrene surface (due to the formation of exposed oxygen sites). Formation of metal oxide and metal-organic compound is detected during the Al metallization of MEH-PPV and ozone-treated PS surfaces. Our results showed that the condensation of Al on polymer surfaces is highly dependent on surface reactivity. Enormous differences were observed for the condensation coefficient of Al on PS and PS-O3 surfaces. For the inert PS surface, results showed that Al atoms poorly wet the polymer surface and form distributed clusters at the surface. Results on reactive polymer surfaces suggest morphology reminiscent of a Stranski-Krastanov-type growth and high contact area. Many studies have shown that the insertion of a thin interlayer of the oxide or fluoride of alkali or alkaline metals between the low work function electrode and the organic semiconductor layers dramatically lowers the onset voltage and increases the efficiency compared to identical devices without the insulating layer. Various modes have been suggested for the mechanism of device performance enhancement. We have investigated the chemical and electrical interaction of (i) LiF with MEH-PPV, (ii) Al with MEH-PPV in the presence of a thin LiF layer at the interface, and finally (iii) the interaction of Al with LiF. AFM and XPS data showed that LiF forms island on the surface. Our data in agreement with various existing models suggested the (i) alteration in the electronic properties under applied bias, (ii) doping of the organic semiconductor, (iii) formation of metal alloy (Au-Li). In addition to the possible electrical modifications at the interface suggested previously, our data also suggest a change in the film growth on LiF modified surfaces.

Vapor-Liquid-Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets.

PubMed

Nikoobakht, Babak; Herzing, Andrew; Muramoto, Shin; Tersoff, Jerry

2015-12-09

We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when heated in the presence of water vapor. As they move, the particles etch crystallographically aligned grooves into the surface. We show that this process is a negative analogue of the vapor-liquid-solid (VLS) growth of semiconductor nanowires: the semiconductor dissolves into the catalyst and reacts with water vapor at the catalyst surface to create volatile oxides, depleting the dissolved cations and anions and thus sustaining the dissolution process. This VLS etching process provides a new tool for directed assembly of structures with sublithographic dimensions, as small as a few nanometers in diameter. Au particles above 100 nm in size do not exhibit this process but remain stationary, with oxide accumulating around the particles.

High resolution three-dimensional doping profiler

DOEpatents

Thundat, Thomas G.; Warmack, Robert J.

1999-01-01

A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

PubMed Central

2009-01-01

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors. PMID:20596433

Anticorrosion performance of chromized coating prepared by pack cementation in simulated solution with H2S and CO2

NASA Astrophysics Data System (ADS)

Wang, Qin-Ying; Behnamian, Yashar; Luo, Hong; Wang, Xian-Zong; Leitch, Michael; Zeng, Hongbo; Luo, Jing-Li

2017-10-01

A hash service environment containing H2S and CO2 in oil industry usually causes corrosion of carbon steel. In this study, the chromized coatings with different deposited time were prepared on the surface of carbon steel by the method of pack cementation to enhance its corrosion resistance. Then the microstructure, hardness, corrosion resistance as well as the semiconductor behavior of coatings in the simulated solution with saturated H2S and CO2 were investigated. The results show that the content of Cr in coating was increased by prolonging deposited time, and both chromium carbides and chromium nitrides were formed. Furthermore, coatings display higher polarization resistance, Rp, than that of the substrate, indicating a higher resistance to charge transfer on coating surface. The corrosion rates of coatings with different deposited time were significantly lower than that of substrate. Chemical analysis showed the formation of heavy sulfides on the surface of substrates after corrosion, while the least corrosion products were detected on the surface of coating with deposited time of 12 h. Mott-Schottky results indicated that coating of 12 h displayed less defects than the other two coatings with deposited time of 4 h and 8 h, which will be beneficial to improve corrosion resistance. The investigation showed that chromized coatings exhibited high corrosion resistance and owned a potential application in oil industry for corrosion prevention.

Early Stages of Interface Formation at Compound Semiconductor Surfaces Studied by Scanning Tunneling Microscopy

DTIC Science & Technology

1991-10-01

classical image potential in an ideal creasing gap separation, that is specific to the form of the metal- insulator -semiconductor (MIS) junction...with which one can precisely adjust s, and hence continuously vary the vacvuum barrier, is a potentially valuable tool for investigating this effect- By... insulator -semiconductor (MIS) junction similar to that shown in Fig. I diverge at the semiconductor-vacuum and vacuum-metal interfaces [7,81. These

Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alvarado, Samuel R.; Guo, Yijun; Ruberu, T. Purnima A.

2014-03-15

The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductor–metal and semiconductor–metal oxide photocatalytic nanocomposites. In addition, we describemore » our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).« less

Raman spectroscopy and atomic force microscopy study of interfacial polytypism in GaP/Ge(111) heterostructures

NASA Astrophysics Data System (ADS)

Aggarwal, R.; Ingale, Alka A.; Dixit, V. K.

2018-01-01

Effects of lattice and polar/nonpolar mismatch between the GaP layer and Ge(111) substrate are investigated by spatially resolved Raman spectroscopy. The red shifted transverse optical (TO) and longitudinal optical (LO) phonons due to residual strain, along with asymmetry to TO phonon ∼358 cm-1 are observed in GaP/Ge(111). The peak intensity variation of mode ∼358 cm-1 with respect to TO phonon across the crystallographic morphed surface of GaP micro structures is associated with the topographical variations using atomic force microscopy mapping and Raman spectroscopy performed on both in plane and cross-sectional surface. Co-existence of GaP allotropes, i.e. wurtzite phase near heterojunction interface and dominant zinc-blende phase near surface is established using the spatially resolved polarized Raman spectroscopy from the cross sectional surface of heterostructures. This consistently explains effect of surface morphology on Raman spectroscopy from GaP(111). The study shows the way to identify crystalline phases in other advanced semiconductor heterostructures without any specific sample preparation.

Semiconductor etching by hyperthermal neutral beams

NASA Technical Reports Server (NTRS)

Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

1999-01-01

An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

Theoretical and experimental investigations of superconductivity. Amorphous semiconductors, superconductivity and magnetism

NASA Technical Reports Server (NTRS)

Cohen, M. H.

1973-01-01

The research activities from 1 March 1963 to 28 February 1973 are summarized. Major lectures are listed along with publications on superconductivity, superfluidity, electronic structures and Fermi surfaces of metals, optical spectra of solids, electronic structure of insulators and semiconductors, theory of magnetic metals, physics of surfaces, structures of metals, and molecular physics.

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

"Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

PubMed

Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

2013-12-03

Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Submicron polymer particles containing fluorescent semiconductor nanocrystals CdSe/ZnS for bioassays.

PubMed

Generalova, Alla N; Sizova, Svetlana V; Zdobnova, Tatiana A; Zarifullina, Margarita M; Artemyev, Michail V; Baranov, Alexander V; Oleinikov, Vladimir A; Zubov, Vitaly P; Deyev, Sergey M

2011-02-01

This study aimed to design a panel of uniform particulate biochemical reagents and to test them in specific bioassays. These reagents are polymer particles of different sizes doped with semiconductor nanocrystals and conjugated with either full-size antibodies or recombinant mini-antibodies (4D5 scFv fragment) designed by genetic engineering approaches. A panel of highly fluorescent polymer particles (150-800 nm) were formed by embedding CdSe/ZnS nanocrystals (quantum dots) into preformed polyacrolein and poly(acrolein-co-styrene) particles. Morphology, content and fluorescence characteristics of the prepared materials were studied by laser correlation spectroscopy, spectrophotometry, optical and fluorescent microscopy and fluorimetry. The obtained fluorescent particles sensitized by anti-Yersinia pestis antibodies were used for rapid agglutination glass test suitable for screening analysis of Y. pestis antigen and for microtiter particle agglutination, which, owing to its speed and simplicity, is very beneficial for diagnostic detection of Y. pestis antigen. Recombinant 4D5 scFv antibodies designed and conjugated with polymer particles containing quantum dots provide multipoint highly specific binding with cancer marker HER2/neu on the surface of SKOV-3 cell.

A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

NASA Astrophysics Data System (ADS)

Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

2016-07-01

The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

Preparation of a Phosphor, ZnS:Cupric.

ERIC Educational Resources Information Center

Suib, Steven L.; Tanaka, John

1984-01-01

Background information (including optical properties of inorganic materials) and procedures are provided for an experiment which introduces students to preparation of a doped semiconductor; phosphorescence; gettering procedures; reducing atmospheres; and use of a high-temperature furnace with associated thermocouples, temperature controllers, and…

Properties of Semiconductors: Synthesis of Oriented ZnO for Photoelectrochemistry and Photoremediation

ERIC Educational Resources Information Center

Koenig, Emma; Jacobs, Ari; Lisensky, George

2017-01-01

Semiconductors are an important class of materials; preparing ZnO nanorods allows semiconducting properties to be easily observed. The week before lab, groups of four students take 15 min to setup two fluorine-doped tin oxide glass (FTO) slides in a zinc nitrate and hexamethylenetetramine solution stored at 90°C until the next lab. Hexagonal ZnO…

Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography.

PubMed

Pantzer, Adi; Vakahy, Atsmon; Eliyahou, Zohar; Levi, George; Horvitz, Dror; Kohn, Amit

2014-03-01

Modern semiconductor devices function due to accurate dopant distribution. Off-Axis Electron Holography (OAEH) in the transmission electron microscope (TEM) can map quantitatively the electrostatic potential in semiconductors with high spatial resolution. For the microelectronics industry, ongoing reduction of device dimensions, 3D device geometry, and failure analysis of specific devices require preparation of thin TEM samples, under 70 nm thick, by focused ion beam (FIB). Such thicknesses, which are considerably thinner than the values reported to date in the literature, are challenging due to FIB induced damage and surface depletion effects. Here, we report on preparation of TEM samples of silicon PN junctions in the FIB completed by low-energy (5 keV) ion milling, which reduced amorphization of the silicon to 10nm thick. Additional perpendicular FIB sectioning enabled a direct measurement of the TEM sample thickness in order to determine accurately the crystalline thickness of the sample. Consequently, we find that the low-energy milling also resulted in a negligible thickness of electrically inactive regions, approximately 4nm thick. The influence of TEM sample thickness, FIB induced damage and doping concentrations on the accuracy of the OAEH measurements were examined by comparison to secondary ion mass spectrometry measurements as well as to 1D and 3D simulations of the electrostatic potentials. We conclude that for TEM samples down to 100 nm thick, OAEH measurements of Si-based PN junctions, for the doping levels examined here, resulted in quantitative mapping of potential variations, within ~0.1 V. For thinner TEM samples, down to 20 nm thick, mapping of potential variations is qualitative, due to a reduced accuracy of ~0.3 V. This article is dedicated to the memory of Zohar Eliyahou. Copyright © 2014 Elsevier B.V. All rights reserved.

Raman study of TiO2 coatings modified by UV pulsed laser

NASA Astrophysics Data System (ADS)

Belka, Radosław; Keczkowska, Justyna; Sek, Piotr

2016-12-01

The TiO2 coatings were prepared by simple sol-gel method and modified by UV pulsed laser. TiO2, also know as titania, is a ceramic compound, existing in numerous polymorphic forms, mainly as tetragonal rutile and anatase, and rhomboidal brookite. Rutile is the most stable form of titanium dioxide, whereas anatase is a metastable form, created in lower temperatures than rutile. Anatase is marked with higher specific surface area, porosity and a higher number of surface hydroxyl groups as compared to rutile. The unique optical and electronic properties of TiO2 results in its use as semiconductors dielectric mirrors, sunscreen and UV-blocking pigments and especially as photocatalyst. In this paper, the tetraisopropoxide was used as Ti precursor according to sol-gel method. An organic base was applied during sol preparation. Prepared gel was coated on glass substrates and calcined in low temperature to obtain amorphous phase of titania. Prepared coatings were modified by UV picosecond pulse laser with different pulse repetition rate and pulse power. Physical modification of the coatings using laser pulses was intended in order change the phase content of the produced material. Raman spectroscopy (RS) method was applied to studies of modified coatings as it is one of the basic analytical techniques, supporting the identification of compounds and obtaining information about the structure. Especially, RS is a useful method for distinguishing the anatase and rutile phases. In these studies, anatase to rutile transformation was observed, depending on laser parameters.

Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity

PubMed Central

Bent, Stacey F.; Kachian, Jessica S.; Rodríguez-Reyes, Juan Carlos F.; Teplyakov, Andrew V.

2011-01-01

Surface functionalization of semiconductors has been the backbone of the newest developments in microelectronics, energy conversion, sensing device design, and many other fields of science and technology. Over a decade ago, the notion of viewing the surface itself as a chemical reagent in surface reactions was introduced, and adding a variety of new functionalities to the semiconductor surface has become a target of research for many groups. The electronic effects on the substrate have been considered as an important consequence of chemical modification. In this work, we shift the focus to the electronic properties of the functional groups attached to the surface and their role on subsequent reactivity. We investigate surface functionalization of clean Si(100)-2 × 1 and Ge(100)-2 × 1 surfaces with amines as a way to modify their reactivity and to fine tune this reactivity by considering the basicity of the attached functionality. The reactivity of silicon and germanium surfaces modified with ethylamine (CH3CH2NH2) and aniline (C6H5NH2) is predicted using density functional theory calculations of proton attachment to the nitrogen of the adsorbed amine to differ with respect to a nucleophilic attack of the surface species. These predictions are then tested using a model metalorganic reagent, tetrakis(dimethylamido)titanium (((CH3)2N)4Ti, TDMAT), which undergoes a transamination reaction with sufficiently nucleophilic amines, and the reactivity tests confirm trends consistent with predicted basicities. The identity of the underlying semiconductor surface has a profound effect on the outcome of this reaction, and results comparing silicon and germanium are discussed. PMID:21068370

Organic semiconductor growth and morphology considerations for organic thin-film transistors.

PubMed

Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

2010-09-08

Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

Positron beam studies of solids and surfaces: A summary

NASA Astrophysics Data System (ADS)

Coleman, P. G.

2006-02-01

A personal overview is given of the advances in positron beam studies of solids and surfaces presented at the 10th International Workshop on Positron Beams, held in Doha, Qatar, in March 2005. Solids studied include semiconductors, metals, alloys and insulators, as well as biophysical systems. Surface studies focussed on positron annihilation-induced Auger electron spectroscopy (PAES), but interesting applications of positron-surface interactions in fields as diverse as semiconductor technology and studies of the interstellar medium serve to illustrate once again the breadth of scientific endeavour covered by slow positron beam investigations.

Carbon Nanotube Tip Probes: Stability and Lateral Resolution in Scanning Probe Microscopy and Application to Surface Science to Semiconductors

NASA Technical Reports Server (NTRS)

Nguyen, Cattien V.; Chao, Kuo-Jen; Stevens, Ramsey M. D.; Delzeit, Lance; Cassell, Alan; Han, Jie; Meyyappan, M.; Arnold, James (Technical Monitor)

2001-01-01

In this paper we present results on the stability and lateral resolution capability of carbon nanotube (CNT) scanning probes as applied to atomic force microscopy (AFM). Surface topography images of ultra-thin films (2-5 nm thickness) obtained with AFM are used to illustrate the lateral resolution capability of single-walled carbon nanotube probes. Images of metal films prepared by ion beam sputtering exhibit grain sizes ranging from greater than 10 nm to as small as approximately 2 nm for gold and iridium respectively. In addition, imaging stability and lifetime of multi-walled carbon nanotube scanning probes are studied on a relatively hard surface of silicon nitride (Si3N4). AFM images Of Si3N4 surface collected after more than 15 hrs of continuous scanning show no detectable degradation in lateral resolution. These results indicate the general feasibility of CNT tips and scanning probe microscopy for examining nanometer-scale surface features of deposited metals as well as non-conductive thin films. AFM coupled with CNT tips offers a simple and nondestructive technique for probing a variety of surfaces, and has immense potential as a surface characterization tool in integrated circuit manufacturing.

Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

DTIC Science & Technology

1990-01-01

18] L. Bovino , T. Burke, R. Youmans, M. Weiner, and J. Car, r, "Recent Advances in Optically C’ntrolled Bulk Semiconductor Switches," Digest of...Comp. Simul. 5 (3), 175 (1988). [321 M. Weiner, L. Bovino , R. Youmans, and T. Burke, "Modeling of the Optically Conrolled Semiconductor Switch," J

Terahertz optoelectronics with surface plasmon polariton diode.

PubMed

Vinnakota, Raj K; Genov, Dentcho A

2014-05-09

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

Multi-harmonic quantum dot optomechanics in fused LiNbO3-(Al)GaAs hybrids

NASA Astrophysics Data System (ADS)

Nysten, Emeline D. S.; Huo, Yong Heng; Yu, Hailong; Song, Guo Feng; Rastelli, Armando; Krenner, Hubert J.

2017-11-01

We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises of a surface acoustic wave chip made from highly piezoelectric LiNbO3 and a GaAs-based semiconductor membrane with an embedded layer of quantum dots. Employing multi-harmonic transducers, we generated sound waves on LiNbO3 over a wide range of radio frequencies. We monitored their coupling to and propagation across the semiconductor membrane, both in the electrical and optical domain. We demonstrate the enhanced optomechanical tuning of the embedded quantum dots with increasing frequencies. This effect was verified by finite element modelling of our device geometry and attributed to an increased localization of the acoustic field within the semiconductor membrane. For moderately high acoustic frequencies, our simulations predict strong optomechanical coupling, making our hybrid device ideally suited for applications in semiconductor based quantum acoustics.

Method of making silicon on insalator material using oxygen implantation

DOEpatents

Hite, Larry R.; Houston, Ted; Matloubian, Mishel

1989-01-01

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

NASA Astrophysics Data System (ADS)

Lee, Donghun; Daughton, David; Gupta, Jay

2009-03-01

Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

PubMed Central

2013-01-01

In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms’ redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones. PMID:23735193

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

NASA Astrophysics Data System (ADS)

Park, Jun Hong

For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part, the effect of ambient air on TMDs will be investigated and partial oxidation of TMDs. In the last part, uniform deposition of dielectric layers on 2D materials will be presented, employing organic seedling layer. Although 2D materials have been expected as next generation semiconductor platform, direct deposition of dielectric is still challenging and induces leakage current commonly, because inertness of their surface resulted from absent of dangling bond. Here, metal phthalocyanine monolayer (ML) is employed as seedling layers and the growth of atomic layer deposition (ALD) dielectric is investigated in each step using STM.

Epitaxy of Polar Oxides and Semiconductors

NASA Astrophysics Data System (ADS)

Shelton, Christopher Tyrel

Integrating polar oxide materials with wide-bandgap nitride semiconductors offers the possibility of a tunable 2D carrier gas (2DCG) - provided defect densities are low and interfaces are abrupt. This dissertation investigates a portion of the synthesis science necessary to produce a "semiconductor-grade" interface between these highly dissimilar materials. A significant portion of this work is aligned with efforts to engineer a step-free GaN substrate to produce single in-plane oriented rocksalt oxide films. Initially, we explore the homoepitaxial MOCVD growth conditions necessary to produce highquality GaN films on ammonothermally grown substrates. Ammono substrates are only recently available for purchase and are the market leader in low-dislocation density material. Their novelty requires development of an understanding of morphology trade-offs in processing space. This includes preservation of the epi-polished surface in aggressive MOCVD environments and an understanding of the kinetic barriers affecting growth morphologies. Based on several factors, it was determined that GaN exhibits an 'uphill' diffusion bias that may likely be ascribed to a positive Ehrlich-Schwoebel (ES) barrier. This barrier should have a stabilizing effect against step-bunching but, for many growth conditions, regular step bunching was observed. One possible explanation for the step-bunching instability is the presence of impurities. Experimentally, conditions which incorporate more carbon into GaN homoepitaxial layers are correlated with step-bunching while conditions that suppress carbon produce bilayer stepped morphologies. These observations lead us to the conclusion that GaN homoepitaxial morphology is a competition between impurity induced step-bunching and a stabilizing diffusion bias due to a positive ES barrier. Application of the aforementioned homoepitaxial growth techniques to discrete substrate regions using selected- and confined area epitaxy (SAE,CAE) produces some remarkable surface morphologies. This work represents the first effort to extend SAE and CAE to true bulk single-crystal GaN substrates. By carefully controlling supersaturation during growth it is possible to prepare confined areas with a range of step densities, including surfaces that are entirely step-free. Single terrace GaN mesas up to 100 m in size have been observed, however the potential exists, due to the extremely low dislocation density of the substrate, to further extend the dimensions of these regions. Step-free GaN templates are ideal substrates for rocksalt heteroepitaxy and solve a long-standing challenge related to the integration of cubic and hexagonal materials. It has been previously observed that the origin of the two in-plane orientations in rocksalts grown on III-nitrides is a consequence of the stepped GaN surface. By using a substrate that is effectively step-free across a 100 m region, it is possible to prepare a rocksalt // GaN film with a single in-plane orientation. Heterojunctions of this type are disclination defect free and highly crystalline. The ability to locally prepare a single orientation rocksalt film, coupled with commensurate 2D layer-by-layer growth techniques, allows growth, for the first time, of a truly 'semiconductor-grade' oxide-nitride interface. To study the transport properties of oxide-nitride heterostructures, a series of experiments on standard GaN // sapphire template layers were conducted. Devices that allowed contact to the buried oxide-nitride interface were prepared and characterized using low-temperature Hall measurements. Although a high mobility 2DEG was not observed in these samples, a conduction path at the lattice matched Mg0.52Ca0.48O // GaN interface did appear. If confirmed, this finding could represent the first evidence for interfacial polar coupling between an oxide and a nitride. Overcoming the significant symmetry, chemistry and bonding environment barriers to forming a structurally perfect oxide-nitride interface has required many innovations and the development of several new technologies. It is encouraging, however, that a path around such challenging obstacles exists. We believe the techniques and findings presented in this work are general to many systems, offering hope for a future 'materials functionality' based integration strategy. (Abstract shortened by ProQuest.).

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Robust forests of vertically aligned carbon nanotubes chemically assembled on carbon substrates.

PubMed

Garrett, David J; Flavel, Benjamin S; Shapter, Joseph G; Baronian, Keith H R; Downard, Alison J

2010-02-02

Forests of vertically aligned carbon nanotubes (VACNTs) have been chemically assembled on carbon surfaces. The structures show excellent stability over a wide potential range and are resistant to degradation from sonication in acid, base, and organic solvent. Acid-treated single-walled carbon nanotubes (SWCNTs) were assembled on amine-terminated tether layers covalently attached to pyrolyzed photoresist films. Tether layers were electrografted to the carbon substrate by reduction of the p-aminobenzenediazonium cation and oxidation of ethylenediamine. The amine-modified surfaces were incubated with cut SWCNTs in the presence of N,N'-dicyclohexylcarbodiimide (DCC), giving forests of vertically aligned carbon nanotubes (VACNTs). The SWCNT assemblies were characterized by scanning electron microscopy, atomic force microscopy, and electrochemistry. Under conditions where the tether layers slow electron transfer between solution-based redox probes and the underlying electrode, the assembly of VACNTs on the tether layer dramatically increases the electron-transfer rate at the surface. The grafting procedure, and hence the preparation of VACNTs, is applicable to a wide range of materials including metals and semiconductors.

Effect of corona discharge on cadmium sulphide and lead sulphide films

NASA Astrophysics Data System (ADS)

Koul Chaku, Anemone; Singh, Pramod K.; Bhattacharya, Bhaskar

2018-03-01

This paper describes the effect of corona discharge on cadmium sulphide (CdS) and lead sulphide (PbS) films prepared using the chemical route. The property of films before and after exposure to corona has been described in detail. The electronic properties of the CdS and PbS films have been studied by current-voltage (I-V), capacitance-voltage (C-V) measurements. The structural properties and surface morphology were studied by using X-ray diffraction and scanning electron microscopy before and after exposing to Corona discharge. The films displayed the change in surface morphology after exposure to the corona discharge. It has been found that the films showed an increase in resistivity after exposure. This change in property has been attributed to modification in surface states. Time-dependent recovery indicated that room temperature annealing is sufficient to regain the normal resistivity of the films. The experiment was carried with the aim of studying the effect of the interaction of corona discharge on the semiconductor films and its subsequent effects.

Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vela Becerra, Javier; Ruberu, T. Purnima A.

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

Synergistic effects of semiconductor substrate and noble metal nano-particles on SERS effect both theoretical and experimental aspects

NASA Astrophysics Data System (ADS)

Yang, Chen; Liang, Pei; Tang, Lisha; Zhou, Yongfeng; Cao, Yanting; Wu, Yanxiong; Zhang, De; Dong, Qianmin; Huang, Jie; He, Peng

2018-04-01

As a means of chemical identification and analysis, Surface enhanced Raman spectroscopy (SERS), with the advantages of high sensitivity and selectivity, non-destructive, high repeatability and in situ detection etc., has important significance in the field of composition detection, environmental science, biological medicine etc. Physical model of coupling effect between different semiconductor substrates and noble metal particles were investigated by using 3D-FDTD method. Mechanism and the effects of excitation wavelength, particle spacing and semiconductor substrate types on the SERS effect were discussed. The results showed that the optimal excitation wavelengths of three noble metals of Ag, Au, Cu, were located at 510, 600 and 630 nm, respectively; SERS effect of Ag, Au, Cu increases with the decreasing of the inter distance of particles, while the distance of the NPs reaches the critical value of 3 nm, the strength of SERS effect will be greatly enhanced. For the four different types of substrate of Ge, Si, SiO2 (glass) and Al2O3, the SERS effect of Ag on SiO2 > Ge > Al2O3 > Si. For Au and Cu nanoparticles, the SERS effect of them on oxide substrate is stronger than that on non-oxide substrate. In order to verify FDTD simulations, taking silver nanoparticles as an example, and silver nanoparticles prepared by chemical method were spinning coating on the four different substrates with R6G as probe molecules. The results show that the experimental results are consistent with FDTD theoretical simulations, and the SERS enhancement effect of Ag-SiO2 substrate is best. The results of this study have important theoretical significance to explain the variations of SERS enhancement on different noble metals, which is also an important guide for the preparation of SERS substrates, especially for the microfluidics. The better Raman effect can be realized by choosing proper substrate type, particle spacing and excitation wavelength, result in expanding the depth and width of SERS application.

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Optic probe for semiconductor characterization

DOEpatents

Sopori, Bhushan L [Denver, CO; Hambarian, Artak [Yerevan, AM

2008-09-02

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si.

PubMed

Gries, Katharina I; Werner, Katharina; Beyer, Andreas; Stolz, Wolfgang; Volz, Kerstin

2016-02-01

Melt-back etching is an effect that can occur for gallium (Ga) containing III/V semiconductors grown on Si. Since this effect influences interfaces between the two compounds and therefore the physical characteristics of the material composition, it is desirable to understand its driving forces. Therefore, we investigated Ga grown on Si (001) via metal organic chemical vapor deposition using trimethyl Ga as a precursor. As a result of the melt-back etching, Ga-containing droplets formed on the Si surface which reach into the Si wafer. The shape of these structures was analyzed by plan view investigation and cross sectional tomography in a (scanning) transmission electron microscope. For plan view preparation a focused ion beam was used to avoid damage to the Ga-containing structures, which are sensitive to the chemicals normally used during conventional plan view preparation. Combining the results of both investigation methods confirms that the Ga-containing structure within the Si exhibits a pyramid shape with facets along the Si {111} lattice planes.

Band alignments in Fe/graphene/Si(001) junctions studied by x-ray photoemission spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Breton, J.-C., E-mail: jean-christophe.lebreton@univ-rennes1.fr; Tricot, S.; Delhaye, G.

2016-08-01

The control of tunnel contact resistance is of primary importance for semiconductor-based spintronic devices. This control is hardly achieved with conventional oxide-based tunnel barriers due to deposition-induced interface states. Manipulation of single 2D atomic crystals (such as graphene sheets) weakly interacting with their substrate might represent an alternative and efficient way to design new heterostructures for a variety of different purposes including spin injection into semiconductors. In the present paper, we study by x-ray photoemission spectroscopy the band alignments and interface chemistry of iron–graphene-hydrogenated passivated silicon (001) surfaces for a low and a high n-doping concentration. We find that themore » hydrogen passivation of the Si(001) surface remains efficient even with a graphene sheet on the Si(001) surface. For both doping concentrations, the semiconductor is close to flat-band conditions which indicates that the Fermi level is unpinned on the semiconductor side of the Graphene/Si(001):H interface. When iron is deposited on the graphene/Si(001):H structures, the Schottky barrier height remains mainly unaffected by the metallic overlayer with a very low barrier height for electrons, a sought-after property in semiconductor based spintronic devices. Finally, we demonstrate that the graphene layer intercalated between the metal and semiconductor also serves as a protection against iron-silicide formation even at elevated temperatures preventing from the formation of a Si-based magnetic dead layer.« less

Band alignments in Fe/graphene/Si(001) junctions studied by x-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Le Breton, J.-C.; Tricot, S.; Delhaye, G.; Lépine, B.; Turban, P.; Schieffer, P.

2016-08-01

The control of tunnel contact resistance is of primary importance for semiconductor-based spintronic devices. This control is hardly achieved with conventional oxide-based tunnel barriers due to deposition-induced interface states. Manipulation of single 2D atomic crystals (such as graphene sheets) weakly interacting with their substrate might represent an alternative and efficient way to design new heterostructures for a variety of different purposes including spin injection into semiconductors. In the present paper, we study by x-ray photoemission spectroscopy the band alignments and interface chemistry of iron-graphene-hydrogenated passivated silicon (001) surfaces for a low and a high n-doping concentration. We find that the hydrogen passivation of the Si(001) surface remains efficient even with a graphene sheet on the Si(001) surface. For both doping concentrations, the semiconductor is close to flat-band conditions which indicates that the Fermi level is unpinned on the semiconductor side of the Graphene/Si(001):H interface. When iron is deposited on the graphene/Si(001):H structures, the Schottky barrier height remains mainly unaffected by the metallic overlayer with a very low barrier height for electrons, a sought-after property in semiconductor based spintronic devices. Finally, we demonstrate that the graphene layer intercalated between the metal and semiconductor also serves as a protection against iron-silicide formation even at elevated temperatures preventing from the formation of a Si-based magnetic dead layer.

Great improvement in pseudocapacitor properties of nickel hydroxide via simple gold deposition.

PubMed

Kim, Sun-I; Thiyagarajan, Pradheep; Jang, Ji-Hyun

2014-10-21

In this letter, we report a facile approach to improve the capacitor properties of nickel hydroxide (Ni(OH)2) by simply coating gold nanoparticles (Au NPs) on the surface of Ni(OH)2. Au NP-deposited Ni(OH)2 (Au/Ni(OH)2) has been prepared by application of a conventional colloidal coating of Au NPs on the surface of 3D-Ni(OH)2 synthesized via a hydrothermal method. Compared with pristine Ni(OH)2, Au/Ni(OH)2 shows a 41% enhanced capacitance value, excellent rate capacitance behavior at high current density conditions, and greatly improved cycling stability for supercapacitor applications. The specific capacitance of Au/Ni(OH)2 reached 1927 F g(-1) at 1 A g(-1), which is close to the theoretical capacitance and retained 66% and 80% of the maximum value at a high current density of 20 A g(-1) and 5000 cycles while that of pristine Ni(OH)2 was 1363 F g(-1) and significantly decreased to 48% and 30%, respectively, under the same conditions. The outstanding performance of Au/Ni(OH)2 as a supercapacitor is attributed to the presence of metal Au NPs on the surface of semiconductor Ni(OH)2; this permits the creation of virtual 3D conducting networks via metal/semiconductor contact, which induces fast electron and ion transport by acting as a bridge between Ni(OH)2 nanostructures, thus eventually leading to significantly improved electrochemical capacitive behaviors, as confirmed by the EIS and I-V characteristic data.

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

NASA Astrophysics Data System (ADS)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

Semiconductor Phase Conjugation

DTIC Science & Technology

1992-05-01

PL-TR--91- 1082 PL-TR-- AD-A253 684 91- 1082 SEMICONDUCTOR PHASE CONJUGATION lam-Choon Khoo Pennsylvania State University Electrical and Computer... 1082 This final report was prepared by Pennsylvania State University, University Park, Pennsylvania, under Contract F29601-88-K-0028, Job Order 33261B18...10. SPONSORING/ MONITORING AGENCY REPORT NUMBER Phill ips Laboratory PL-TR--91- 1082 Kirtland AFB, NM 87117-6008 11. SUPPLEMENTARY NOTES 12a

Three-dimensional charge transport in organic semiconductor single crystals.

PubMed

He, Tao; Zhang, Xiying; Jia, Jiong; Li, Yexin; Tao, Xutang

2012-04-24

Three-dimensional charge transport anisotropy in organic semiconductor single crystals - both plates and rods (above and below, respectively, in the figure) - is measured in well-performing organic field-effect transistors for the first time. The results provide an excellent model for molecular design and device preparation that leads to good performance. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

PubMed

Jewett, Scott A; Ivanisevic, Albena

2012-09-18

In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can occur during sample transfer between solutions. The passivation of InAs is dominated by sulfur-based molecules, which form stable In-S bonds on the InAs surface. Both sulfides and alkanethiols form well-defined monolayers on InAs and are dominated by In-S interactions. Sulfur-passivated InAs surfaces prevent regrowth of the surface oxide layer and are more stable in air than unpassivated surfaces. Although functionalization of InAs with sulfur-based molecules effectively passivates the surface, future sensing applications may require the adsorption of functional biomolecules onto the InAs surface. Current research in this area focuses on the passivation abilities of biomolecules such as collagen binding peptides and amino acids. These biomolecules can physically adsorb onto InAs, and they demonstrate some passivation ability but not to the extent of sulfur-based molecules. Because these adsorbents do not form covalent bonds with the InAs surface, they do not effectively block oxide regrowth. A mixed adlayer containing a biomolecule and a thiol on the InAs surface provides one possible solution: these hybrid surfaces enhance passivation but also maintain the presence of a biomolecule on the surface. Such surface functionalization strategies on InAs could provide long-term stability and make these surfaces suitable for biological applications.

Defect engineering of two-dimensional WO3 nanosheets for enhanced electrochromism and photoeletrochemical performance

NASA Astrophysics Data System (ADS)

Zhou, Xiaofang; Zheng, Xiaoli; Yan, Bo; Xu, Tao; Xu, Qun

2017-04-01

The capability of introduction of oxygen vacancies in a controlled way has emerged as the heart of modern transition metal oxide semiconductor chemistry. As chemical defects, the oxygen vacancies have been proposed as electron donors, which are prone to increase carrier density and promote charge carrier separation. Herein, we have successfully prepared 2D WO3 ultrathin nanosheets with abundant surface oxygen vacancies by a combination of facile solvothermal reaction and hydrogenation method. The resultant hydrogenated WO3 ultrathin nanosheets exhibit remarkable electrochromism and photocatalytic performances compared with the non-hydrogenated samples, mainly due to their increased oxygen vacancies, narrowed band gap coupled with fast charge transfer and enhanced adsorption of visible light.

Visible Light Photocatalysis via CdS/ TiO 2 Nanocomposite Materials

DOE PAGES

Srinivasan, Sesha S.; Wade, Jeremy; Stefanakos, Elias K.

2006-01-01

Nmore » anostructured colloidal semiconductors with heterogeneous photocatalytic behavior have drawn considerable attention over the past few years. This is due to their large surface area, high redox potential of the photogenerated charge carriers, and selective reduction/oxidation of different classes of organic compounds. In the present paper, we have carried out a systematic synthesis of nanostructured CdS- TiO 2 via reverse micelle process. The structural and microstructural characterizations of the as-prepared CdS- TiO 2 nanocomposites are determined using XRD and SEM-EDS techniques. The visible light assisted photocatalytic performance is monitored by means of degradation of phenol in water suspension.« less

Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors

NASA Astrophysics Data System (ADS)

Burger, Arnold; Chattopadhyay, Kaushik; Chen, Henry; Olivier Ndap, Jean; Ma, Xiaoyan; Trivedi, Sudhir; Kutcher, Susan W.; Chen, Rujin; Rosemeier, Robert D.

1999-03-01

Cadmium manganese telluride (Cd 1- xMn xTe) is a diluted magnetic semiconductor material which forms the basis for many important devices such as IR detectors, solar cells, magnetic field sensors, optical isolators, and visible and near IR lasers. High resistivity (>10 10 Ω cm) and high μ τ (>10 -6 cm 2/V) material, which are the two prerequisites in the fabrication of radiation detectors, has recently been demonstrated at Brimrose Corp. This paper presents the crystal growth of intentionally vanadium doped crystals, the surface preparation and contacting procedure, as well as the best detector performance obtained so far. Dark current characteristics, and low temperature photoluminescence results are also presented and discussed.

Synthesis of carbon-based quantum dots from starch extracts: Optical investigations.

PubMed

Al-Douri, Y; Badi, N; Voon, C H

2018-03-01

Carbon-based quantum dots (C-QDs) were synthesized through microwave-assisted carbonization of an aqueous starch suspension mediated by sulphuric and phosphoric acids. The as-prepared C-QDs showed blue, green and yellow luminescence without the addition of any surface-passivating agent. The C-QDs were further analyzed by UV-vis spectroscopy to measure the optical response of the organic compound. The energy gaps revealed narrow sizing of C-QDs in the semiconductor range. The optical refractive index and dielectric constant were investigated. The C-QDs size distribution was characterized. The results suggested an easy route to the large scale production of C-QDs materials. Copyright © 2017 John Wiley & Sons, Ltd.

Porous glasses as a matrix for incorporation of photonic materials. Pore determination by positron annihilation lifetime spectroscopy

NASA Astrophysics Data System (ADS)

Reisfeld, Pore determination by positron annihilation lifetime spectroscopy R.; Saraidarov, T.; Jasinska, B.

2004-07-01

Porous glasses prepared by the sol-gel technique have a variety of applications when incorporated by photonic materials: tunable lasers, sensors, luminescence solar concentrators, semiconductor quantum dots, biological markers. The known methods of pore size determinations, the nitrogen adsorption and mercury porosimetry allow to determine the sizes of open pores. Positron annihilation lifetime spectroscopy (PALS) allows to determine pore sizes also of closed pores. As an example we have performed measurements of non-doped zirconia-silica-polyurethane (ZSUR) ormocer glasses and the same glasses doped with lead sulfide quantum dots. The pore radii range between 0.25-0.38 nm, total surface area 15.5-23.8 m 2/g.

Research study on materials processing in space, experiment M512

NASA Technical Reports Server (NTRS)

Rubenstein, M.; Hopkins, R. H.; Kim, H. B.

1973-01-01

Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C), by vapor growth, and by growth from metallic solutions. It has been established that growth from metallic solution can produce material with high, and perhaps with the highest possible, chemical homogeneity and crystalline perfection. Growth of GaAs from metallic solution can be performed at relatively low temperatures (about 600C) and is relatively insensitive to temperature fluctuations. However, this type of crystal growth is subject to the decided disadvantage that density induced convection currents may produce variations in rates of growth at a growing surface. This problem would be minimized under reduced gravity conditions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

EUO-Based Multifunctional Heterostructures

DTIC Science & Technology

2015-06-06

magnetoresistance and the metal -insulator transition resistance ratios of doped EuO by interfacing this semiconductor with niobium; the observed effect is...general and may be applied to any metal /semiconductor interface where the semiconductor shows large Zeeman splitting under magnetic field, (2...understanding the changes in electronic structure and Fermi-surface reconstruction that occur as doped EuO progresses through the ferromagnetic metal

Liquid precursor for deposition of copper selenide and method of preparing the same

DOEpatents

Curtis, Calvin J.; Miedaner, Alexander; Franciscus Antonius Maria Van Hest, Marinus; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

2015-09-08

Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed.

Structural and phase transformation of A{sup III}B{sup V}(100) semiconductor surface in interaction with selenium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bezryadin, N. N.; Kotov, G. I., E-mail: giktv@mail.ru; Kuzubov, S. V., E-mail: kuzub@land.ru

2015-03-15

Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific features and regularities of the formation of A{sub 3}{sup III}B{sub 4}{sup VI} (100)c(2 × 2) surface phases and thin layers of gallium or indium selenides A{sub 2}{sup III}B{sub 3}{sup VI} (100) on surfaces of different A{sup III}B{sup V}(100) semiconductors are discussed within the vacancy model of surface atomic structure.

Megavoltage imaging with a photoconductor based sensor

DOEpatents

Partain, Larry Dean [Los Altos, CA; Zentai, George [Mountain View, CA

2011-02-08

A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.

Noncontact Measurement of Doping Profile for Bare Silicon

NASA Astrophysics Data System (ADS)

Kohno, Motohiro; Matsubara, Hideaki; Okada, Hiroshi; Hirae, Sadao; Sakai, Takamasa

1998-10-01

In this study, we evaluate the doping concentrations of bare silicon wafers by noncontact capacitance voltage (C V) measurements. The metal-air-insulator-semiconductor (MAIS) method enables the measurement of C V characteristics of silicon wafers without oxidation and electrode preparation. This method has the advantage that a doping profile close to the wafer surface can be obtained. In our experiment, epitaxial silicon wafers were used to compare the MAIS method with the conventional MIS method. The experimental results obtained from the two methods showed good agreement. Then, doping profiles of boron-doped Czochralski (CZ) wafers were measured by the MAIS method. The result indicated a significant reduction of the doping concentration near the wafer surface. This observation is attributed to the well-known deactivation of boron with atomic hydrogen which permeated the silicon bulk during the polishing process. This deactivation was recovered by annealing in air at 180°C for 120 min.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

DOEpatents

Alivisatos, A. Paul; Colvin, Vicki L.

1998-01-01

Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed.

Wafer-level packaging with compression-controlled seal ring bonding

DOEpatents

Farino, Anthony J

2013-11-05

A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

Functionalization of semiconductors for biosensing applications

NASA Astrophysics Data System (ADS)

Estephan, E.; Larroque, C.; Martineau, P.; Cloitre, T.; Gergely, Cs.

2007-05-01

Functionalization of semiconductors (SC) has been widely used for various electronic, photonic and biomedical applications. In this paper, we report on selective functionalization achieved by peptides that reveal specific recognition of the SC surfaces. A M13 bacteriophage library was used to screen 10 10 different 12-mer peptide on various SC substrates to successfully isolate after 3 cycles one specific peptide for the majority of semiconductors. Our results conclude that GaAs(100) and GaN(0001) retain the same sequence of 12-mer peptide, suggesting that the specificity does not depend on the crystallographic structure but it depends on the chemical composition and the electronegativity of the surface, thus on the orientation of the material. We also note the presence of at least one proline (Pro) amino acid in each peptide, and the presence of the histidine (His) in the specific peptides for the II-VI class SC. Pro imprints a constraint to the peptide to facilitate adhesion to the surface, whereas the basic side chain His is known for its affinity towards some of the elements of class II SC. Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide to their specific SC surface in close proximity to a surface of different chemical and structural composition. The use of selected peptides expressed by phage display can be extended to encompass a variety of nanostructured semiconductor based devices.

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1973-01-01

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Magneto-optical Faraday rotation of semiconductor nanoparticles embedded in dielectric matrices.

PubMed

Savchuk, Andriy I; Stolyarchuk, Ihor D; Makoviy, Vitaliy V; Savchuk, Oleksandr A

2014-04-01

Faraday rotation has been studied for CdS, CdTe, and CdS:Mn semiconductor nanoparticles synthesized by colloidal chemistry methods. Additionally these materials were prepared in a form of semiconductor nanoparticles embedded in polyvinyl alcohol films. Transmission electron microscopy and atomic force microscopy analyses served as confirmation of nanocrystallinity and estimation of the average size of the nanoparticles. Spectral dependence of the Faraday rotation for the studied nanocrystals and nanocomposites is correlated with a blueshift of the absorption edge due to the confinement effect in zero-dimensional structures. Faraday rotation spectra and their temperature behavior in Mn-doped nanocrystals demonstrates peculiarities, which are associated with s, p-d exchange interaction between Mn²⁺ ions and band carriers in diluted magnetic semiconductor nanostructures.

Photoinduced energy transfer in transition metal complex oligomers

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1997-04-01

The work we have done over the past three years has been directed toward the preparation, characterization and photophysical examination of mono- and bimetallic diimine complexes. The work is part of a broader project directed toward the development of stable, efficient, light harvesting arrays of transition metal complex chromophores. One focus has been the synthesis of rigid bis-bidentate and bis-tridentate bridging ligands. We have managed to make the ligand bphb in multigram quantities from inexpensive starting materials. The synthetic approach used has allowed us prepare a variety of other ligands which may have unique applications (vide infra). We have prepared,more » characterized and examined the photophysical behavior of Ru(II) and Re(I) complexes of the ligands. Energy donor/acceptor complexes of bphb have been prepared which exhibit nearly activationless energy transfer. Complexes of Ru(II) and Re(I) have also been prepared with other polyunsaturated ligands in which two different long lived ( > 50 ns) excited states exist; results of luminescence and transient absorbance measurements suggest the two states are metal-to-ligand charge transfer and ligand localized {pi}{r_arrow}{pi}* triplets. Finally, we have developed methods to prepare polymetallic complexes which are covalently bound to various surfaces. The long term objective of this work is to make light harvesting arrays for the sensitization of large band gap semiconductors. Details of this work are provided in the body of the report.« less

Liquid precursor for deposition of indium selenide and method of preparing the same

DOEpatents

Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

2015-09-22

Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

Charge transfer excitons and image potential states on organic semiconductor surfaces

NASA Astrophysics Data System (ADS)

Yang, Qingxin; Muntwiler, Matthias; Zhu, X.-Y.

2009-09-01

We report two types of excited electronic states on organic semiconductor surfaces: image potential states (IPS) and charge transfer excitons (CTE). In the former, an excited electron is localized in the surface-normal direction by the image potential and delocalized in the surface plane. In the latter, the electron is localized in all directions by both the image potential and the Coulomb potential from a photogenerated hole on an organic molecule. We use crystalline pentacene and tetracene surfaces as model systems, and time- and angle-resolved two-photon photoemission spectroscopy to probe the energetics and dynamics of both the IPS and the CTE states. On either pentacene or tetracene surfaces, we observe delocalized image bands and a series of CT excitons with binding energies <0.5eV below the image-band minimum. The binding energies of these CT excitons agree well with solutions to the atomic-H-like Schrödinger equation based on the image potential and the electron-hole Coulomb potential. We hypothesize that the formation of CT excitons should be general to the surfaces of organic semiconductors where the relatively narrow valance-band width facilitates the localization of the hole and the low dielectric constant ensures strong electron-hole attraction.

Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

2000-01-01

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

PubMed

Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

2018-05-09

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

Direct observation of triplet energy transfer from semiconductor nanocrystals.

PubMed

Mongin, Cédric; Garakyaraghi, Sofia; Razgoniaeva, Natalia; Zamkov, Mikhail; Castellano, Felix N

2016-01-22

Triplet excitons are pervasive in both organic and inorganic semiconductors but generally remain confined to the material in which they originate. We demonstrated by transient absorption spectroscopy that cadmium selenide semiconductor nanoparticles, selectively excited by green light, engage in interfacial Dexter-like triplet-triplet energy transfer with surface-anchored polyaromatic carboxylic acid acceptors, extending the excited-state lifetime by six orders of magnitude. Net triplet energy transfer also occurs from surface acceptors to freely diffusing molecular solutes, further extending the lifetime while sensitizing singlet oxygen in an aerated solution. The successful translation of triplet excitons from semiconductor nanoparticles to the bulk solution implies that such materials are generally effective surrogates for molecular triplets. The nanoparticles could thereby potentially sensitize a range of chemical transformations that are relevant for fields as diverse as optoelectronics, solar energy conversion, and photobiology. Copyright © 2016, American Association for the Advancement of Science.

Real time quantitative imaging for semiconductor crystal growth, control and characterization

NASA Technical Reports Server (NTRS)

Wargo, Michael J.

1991-01-01

A quantitative real time image processing system has been developed which can be software-reconfigured for semiconductor processing and characterization tasks. In thermal imager mode, 2D temperature distributions of semiconductor melt surfaces (900-1600 C) can be obtained with temperature and spatial resolutions better than 0.5 C and 0.5 mm, respectively, as demonstrated by analysis of melt surface thermal distributions. Temporal and spatial image processing techniques and multitasking computational capabilities convert such thermal imaging into a multimode sensor for crystal growth control. A second configuration of the image processing engine in conjunction with bright and dark field transmission optics is used to nonintrusively determine the microdistribution of free charge carriers and submicron sized crystalline defects in semiconductors. The IR absorption characteristics of wafers are determined with 10-micron spatial resolution and, after calibration, are converted into charge carrier density.

Active Control of Charge Density Waves at Degenerate Semiconductor Interfaces

NASA Astrophysics Data System (ADS)

Vinnakota, Raj; Genov, Dentcho

We present numerical modeling of an active electronically controlled highly confined charge-density waves, i.e. surface plasmon polaritons (SPPs) at the metallurgic interfaces of degenerate semiconductor materials. An electro-optic switching element for fully-functional plasmonic circuits based on p-n junction semiconductor Surface Plasmon Polariton (SPP) waveguide is shown. Two figures of merits are introduced and parametric study has been performed identifying the device optimal operation range. The Indium Gallium Arsenide (In0.53Ga0.47As) is identified as the best semiconductor material for the device providing high optical confinement, reduced system size and fast operation. The electro-optic SPP switching element is shown to operate at signal modulation up to -24dB and switching rates surpassing 100GHz, thus potentially providing a new pathway toward bridging the gap between electronic and photonic devices. The current work is funded by the NSF EPSCoR CIMM project under award #OIA-1541079.

Symposium on New Materials for Nonlinear Optics

DTIC Science & Technology

1991-01-01

C. B. Aakeroy, N. Azoz, P. D. Calvert, M. Kadim, A. J. McCaffery, and K. R. Seddon 35 . Clathrasils: New Materials for Nonlinear Optical...of Quantum Confined Semiconductor Structures - D.S. Chemla 2: 35 Preparation and Characterization of Small Semiconductor Particulates - Norman Herron 3...presiding 2:00 Opening Remarks - John Sohn 2:05 Approaches for the Design of Materials for Nonlinear Optics - M. Lahav 2: 35 Control of Symmetry and Asymmetry

Development of a high average current polarized electron source with long cathode operational lifetime

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. K. Sinclair; P. A. Adderley; B. M. Dunham

Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and havemore » often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2?105???C/cm2 and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.« less

Microscale fluid transport using optically controlled marangoni effect

DOEpatents

Thundat, Thomas G [Knoxville, TN; Passian, Ali [Knoxville, TN; Farahi, Rubye H [Oak Ridge, TN

2011-05-10

Low energy light illumination and either a doped semiconductor surface or a surface-plasmon supporting surface are used in combination for manipulating a fluid on the surface in the absence of any applied electric fields or flow channels. Precise control of fluid flow is achieved by applying focused or tightly collimated low energy light to the surface-fluid interface. In the first embodiment, with an appropriate dopant level in the semiconductor substrate, optically excited charge carriers are made to move to the surface when illuminated. In a second embodiment, with a thin-film noble metal surface on a dispersive substrate, optically excited surface plasmons are created for fluid manipulation. This electrode-less optical control of the Marangoni effect provides re-configurable manipulations of fluid flow, thereby paving the way for reprogrammable microfluidic devices.

High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Yansheng; Tu, Rong, E-mail: turong@whut.edu.cn; Goto, Takashi

2013-08-01

Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakismore » (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.« less

Process for preparing group Ib-IIIa-VIa semiconducting films

DOEpatents

Birkmire, Robert W.; Schultz, Jerold M.; Marudachalam, Matheswaran; Hichri, Habib

1997-01-01

Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.

Process for preparing group Ib-IIIa-VIa semiconducting films

DOEpatents

Birkmire, R.W.; Schultz, J.M.; Marudachalam, M.; Hichri, H.

1997-10-07

Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells. 4 figs.

Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography.

PubMed

Somodi, P K; Twitchett-Harrison, A C; Midgley, P A; Kardynał, B E; Barnes, C H W; Dunin-Borkowski, R E

2013-11-01

Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p-n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p-n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. © 2013 Elsevier B.V. All rights reserved.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

Selective growth of n-type nanoparticles on p-type semiconductors for Z-scheme photocatalysis.

PubMed

Miyauchi, Masahiro; Nukui, Yuuya; Atarashi, Daiki; Sakai, Etsuo

2013-10-09

Nanoparticles of an n-type WO3 semiconductor were segregated on the surface of p-type CaFe2O4 particles by a heterogeneous nucleation process under controlled hydrothermal conditions. By use of this approach, WO3 nanoparticles were selectively deposited on the surface of CaFe2O4, resulting in a significant increase in the photocatalytic reaction rate of the WO3/CaFe2O4 composite for the decomposition of gaseous acetaldehyde under visible-light irradiation. The high visible-light activity of the WO3/CaFe2O4 composite was due to efficient charge recombination through the junctions that formed between the two semiconductors.

Vapor phase growth technique of III-V compounds utilizing a preheating step

NASA Technical Reports Server (NTRS)

Olsen, Gregory Hammond (Inventor); Zamerowski, Thomas Joseph (Inventor); Buiocchi, Charles Joseph (Inventor)

1978-01-01

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface

NASA Astrophysics Data System (ADS)

Kimura, Kenji; Usui, Satoshi; Nakajima, Kaoru

2000-12-01

We have measured secondary-electron (SE) yield γ induced by 0.5 MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface. The position-dependent SE production rate is derived from the observed γ. The SE production rate normalized by the observed mean square charge of the reflected ions is almost independent of the atomic number of the projectile ion. This indicates that the surface track potential induced by the projectile ion is negligibly small to affect the SE emission at semiconductor surfaces probably due to rapid relaxation processes.

Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

DOEpatents

Alivisatos, A.P.; Colvin, V.L.

1998-05-12

Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed. 10 figs.

Organic photosensitive cells grown on rough electrode with nano-scale morphology control

DOEpatents

Yang, Fan [Piscataway, NJ; Forrest, Stephen R [Ann Arbor, MI

2011-06-07

An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

NASA Technical Reports Server (NTRS)

Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

1998-01-01

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Image sensor with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2006-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

High speed CMOS imager with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2001-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Electron transfer dynamics and yield from gold nanoparticle to different semiconductors induced by plasmon band excitation

NASA Astrophysics Data System (ADS)

Du, L. C.; Xi, W. D.; Zhang, J. B.; Matsuzaki, H.; Furube, A.

2018-06-01

Photoinduced electron transfer from gold nanoparticles (NPs) to semiconductor under plasmon excitation is an important phenomenon in photocatalysis and solar cell applications. Femtosecond plasmon-induced electron transfer from gold NPs to the conduction band of different semiconductor like TiO2, SnO2, and ZnO was monitored at 3440 nm upon optical excitation of the surface plasmon band of gold NPs. It was found that electron injection was completed within 240 fs and the electron injection yield reached 10-30% under 570 nm excitation. It means TiO2 is not the only proper semiconductor as electron acceptors in such gold/semiconductor nanoparticle systems.

Surface potential measurement of n-type organic semiconductor thin films by mist deposition via Kelvin probe microscopy

NASA Astrophysics Data System (ADS)

Odaka, Akihiro; Satoh, Nobuo; Katori, Shigetaka

2017-08-01

We partially deposited fullerene (C60) and phenyl-C61-butyric acid methyl ester thin films that are typical n-type semiconductor materials on indium-tin oxide by mist deposition at various substrate temperatures. The topographic and surface potential images were observed via dynamic force microscopy/Kelvin probe force microscopy with the frequency modulation detection method. We proved that the area where a thin film is deposited depends on the substrate temperature during deposition from the topographic images. It was also found that the surface potential depends on the substrate temperature from the surface potential images.

Formation and evolution of ripples on ion-irradiated semiconductor surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, M.; Wu, J. H.; Ye, W.

We have examined the formation and evolution of ripples on focused-ion-beam (FIB) irradiated compound semiconductor surfaces. Using initially normal-incidence Ga{sup +} FIB irradiation of InSb, we tuned the local beam incidence angle (θ{sub eff}) by varying the pitch and/or dwell time. For single-pass FIB irradiation, increasing θ{sub eff} induces morphological evolution from pits and islands to ripples to featureless surfaces. Multiple-pass FIB irradiation of the rippled surfaces at a fixed θ{sub eff} leads to island formation on the ripple crests, followed by nanorod (NR) growth. This ripple-NR transition provides an alternative approach for achieving dense arrays of NRs.

Schottky-barrier-free contacts with two-dimensional semiconductors by surface-engineered MXenes

DOE PAGES

Liu, Yuanyue; Xiao, Hai; Goddard, III, William A.

2016-11-22

Two-dimensional (2D) metal carbides and nitrides, called MXenes, have attracted great interest for applications such as energy storage. Here we demonstrate their potential as Schottky-barrier-free metal contacts to 2D semiconductors, providing a solution to the contact-resistance problem in 2D electronics. Based on first principles calculations, we find that the surface chemistry strongly affects the Fermi level of MXenes: O termination always increases the work function with respect to that of bare surface, OH always decreases it, while F exhibits either trend depending on the specific material. This phenomenon originates from the effect of surface dipoles, which together with the weakmore » Fermi level pinning, enable Schottky-barrier-free hole (or electron) injection into 2D semiconductors through van der Waals junctions with some of the O-terminated (or all the OH-terminated) MXenes. Furthermore, we suggest synthetic routes to control the surface terminations based on the calculated formation energies. Finally, this study enhances the understanding of the correlation between surface chemistry and electronic/transport properties of 2D materials, and also gives practical predictions for improving 2D electronics.« less

Peptides for functionalization of InP semiconductors.

PubMed

Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

2009-09-15

The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

FIBER AND INTEGRATED OPTICS. OTHER TOPICS IN QUANTUM ELECTRONICS: Laser generation of dislocations and mechanism of anisotropic melting of semiconductor surfaces

NASA Astrophysics Data System (ADS)

Volodin, B. L.; Emel'yanov, Vladimir I.

1990-05-01

An analysis is made of a vacancy-deformation mechanism of generation of dislocations by laser radiation involving condensation of laser-induced vacancies when the vacancy concentration exceeds a certain critical value. The theory can be used to estimate the radius of the resultant dislocation loops and their density. It is used to interpret anisotropic laser melting of semiconductor surfaces.

Method of plasma etching Ga-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2012-12-25

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Method of plasma etching GA-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2013-01-01

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

NASA Astrophysics Data System (ADS)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.

Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Tao, Hong; Ma, Zhibin; Yang, Guang; Wang, Haoning; Long, Hao; Zhao, Hongyang; Qin, Pingli; Fang, Guojia

2018-03-01

Tin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2 (FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.

Three-Dimensional CdS/Au Butterfly Wing Scales with Hierarchical Rib Structures for Plasmon-Enhanced Photocatalytic Hydrogen Production.

PubMed

Fang, Jing; Gu, Jiajun; Liu, Qinglei; Zhang, Wang; Su, Huilan; Zhang, Di

2018-06-13

Localized surface plasmon resonance (LSPR) of plasmonic metals (e.g., Au) can help semiconductors improve their photocatalytic hydrogen (H 2 ) production performance. However, an artificial synthesis of hierarchical plasmonic structures down to nanoscales is usually difficult. Here, we adopt the butterfly wing scales from Morpho didius to fabricate three-dimensional (3D) CdS/Au butterfly wing scales for plasmonic photocatalysis. The as-prepared materials well-inherit the pristine hierarchical biostructures. The 3D CdS/Au butterfly wing scales exhibit a high H 2 production rate (221.8 μmol·h -1 within 420-780 nm), showing a 241-fold increase over the CdS butterfly wing scales. This is attributed to the effective potentiation effect of LSPR introduced by multilayer metallic rib structures and a good interface bonding state between Au and CdS nanoparticles. Thus, our study provides a relatively simple method to learn from nature and inspiration for preparing highly efficient plasmonic photocatalysts.

Preparation and characterization of a poly (1, 4-phenylenevinylene) derivative-based hybrid thin film nanocomposites with enhanced performance

NASA Astrophysics Data System (ADS)

Belhaj, Marwa; Jemmeli, Dhouha; Dridi, Cherif; Ben Salem, Balkiss; Jaballah, Najmeddine; Majdoub, Mustapha; Yatskiv, Roman; Grym, Jan

2018-05-01

In this study, a poly (1, 4-phenylenevinylene) derivative (PPV-C6) was synthesized via Gilch polycondensation, and its electrochemical and optical characteristics were determined by cyclic voltammetry analysis, ultraviolet-visible, and photoluminescence spectroscopy. The polymer exhibited semiconductor behavior with an optical band gap of about 2.02 eV. Thin-film hybrid nanocomposites were prepared based on PPV-C6 with a large range of concentrations of sol-gel synthesized surfactant-free ZnO nanoparticles (n-ZnO). We investigated the photophysical properties of nanocomposites with different weight ratios of n-ZnO. The optical absorption spectra of PPV-C6: n-ZnO nanocomposites exhibited moderate variation in terms of the optical band gap energy with respect to the pristine polymer. Photoluminescence spectra indicated that the optimum n-ZnO concentration was about 50 wt% to achieve photoluminescence quenching, which corresponded to the most homogeneous surface and efficient charge transfer due to optimal exciton dissociation. We established good correlations between the investigated properties.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

NASA Astrophysics Data System (ADS)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the potential of non-equilibrium phenomena in metals and semiconductors for future light-based technologies.

Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

NASA Astrophysics Data System (ADS)

Li, Yali; Li, Chunyang; He, Deyan; Li, Junshuai

2009-05-01

We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ~4.6 × 10-4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ~1.21 × 1021 cm-3 and a lower mobility of ~11.4 cm2 V-1 s-1. More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

Next-Generation Theranostic Agents Based on Polyelectrolyte Microcapsules Encoded with Semiconductor Nanocrystals: Development and Functional Characterization

NASA Astrophysics Data System (ADS)

Nifontova, Galina; Zvaigzne, Maria; Baryshnikova, Maria; Korostylev, Evgeny; Ramos-Gomes, Fernanda; Alves, Frauke; Nabiev, Igor; Sukhanova, Alyona

2018-01-01

Fabrication of polyelectrolyte microcapsules and their use as carriers of drugs, fluorescent labels, and metal nanoparticles is a promising approach to designing theranostic agents. Semiconductor quantum dots (QDs) are characterized by extremely high brightness and photostability that make them attractive fluorescent labels for visualization of intracellular penetration and delivery of such microcapsules. Here, we describe an approach to design, fabricate, and characterize physico-chemical and functional properties of polyelectrolyte microcapsules encoded with water-solubilized and stabilized with three-functional polyethylene glycol derivatives core/shell QDs. Developed microcapsules were characterized by dynamic light scattering, electrophoretic mobility, scanning electronic microscopy, and fluorescence and confocal microscopy approaches, providing exact data on their size distribution, surface charge, morphological, and optical characteristics. The fluorescence lifetimes of the QD-encoded microcapsules were also measured, and their dependence on time after preparation of the microcapsules was evaluated. The optimal content of QDs used for encoding procedure providing the optimal fluorescence properties of the encoded microcapsules was determined. Finally, the intracellular microcapsule uptake by murine macrophages was demonstrated, thus confirming the possibility of efficient use of developed system for live cell imaging and visualization of microcapsule transportation and delivery within the living cells.

A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp

The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As themore » result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.« less

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

NASA Astrophysics Data System (ADS)

Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

2018-03-01

Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.

PubMed

Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V

2005-01-01

The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be < 100 microSv h(-1) after 100 d of Large Hadron Collider (LHC) operation and 10 d of cooling.

Modelling short channel mosfets for use in VLSI

NASA Technical Reports Server (NTRS)

Klafter, Alex; Pilorz, Stuart; Polosa, Rosa Loguercio; Ruddock, Guy; Smith, Andrew

1986-01-01

In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dimensional mathematical model of device dynamics was prepared, from which an accurate and computationally efficient drain current expression could be derived for subsequent parameter extraction. While a critical review revealed weaknesses in existing 1-D models (Pao-Sah, Pierret-Shields, Brews, and Van de Wiele), this new model in contrast was found to allow all the charge distributions to be continuous, to retain the inversion layer structure, and to include the contribution of current from the pinched-off part of the device. The model allows the source and drain to operate in different regimes. Numerical algorithms used for the evaluation of surface potentials in the various models are presented.

Chemically Derivatized Semiconductor Photoelectrodes.

ERIC Educational Resources Information Center

Wrighton, Mark S.

1983-01-01

Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

Manipulating semiconductor colloidal stability through doping.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Promotion of atomic hydrogen recombination as an alternative to electron trapping for the role of metals in the photocatalytic production of H2

PubMed Central

Joo, Ji Bong; Dillon, Robert; Lee, Ilkeun; Yin, Yadong; Bardeen, Christopher J.; Zaera, Francisco

2014-01-01

The production of hydrogen from water with semiconductor photocatalysts can be promoted by adding small amounts of metals to their surfaces. The resulting enhancement in photocatalytic activity is commonly attributed to a fast transfer of the excited electrons generated by photon absorption from the semiconductor to the metal, a step that prevents deexcitation back to the ground electronic state. Here we provide experimental evidence that suggests an alternative pathway that does not involve electron transfer to the metal but requires it to act as a catalyst for the recombination of the hydrogen atoms made via the reduction of protons on the surface of the semiconductor instead. PMID:24843154

Promotion of atomic hydrogen recombination as an alternative to electron trapping for the role of metals in the photocatalytic production of H2.

PubMed

Joo, Ji Bong; Dillon, Robert; Lee, Ilkeun; Yin, Yadong; Bardeen, Christopher J; Zaera, Francisco

2014-06-03

The production of hydrogen from water with semiconductor photocatalysts can be promoted by adding small amounts of metals to their surfaces. The resulting enhancement in photocatalytic activity is commonly attributed to a fast transfer of the excited electrons generated by photon absorption from the semiconductor to the metal, a step that prevents deexcitation back to the ground electronic state. Here we provide experimental evidence that suggests an alternative pathway that does not involve electron transfer to the metal but requires it to act as a catalyst for the recombination of the hydrogen atoms made via the reduction of protons on the surface of the semiconductor instead.

Electron-beam-induced potentials in semiconductors: calculation and measurement with an SEM/SPM hybrid system

NASA Astrophysics Data System (ADS)

Thomas, Ch; Joachimsthaler, I.; Heiderhoff, R.; Balk, L. J.

2004-10-01

In this work electron-beam-induced potentials are analysed theoretically and experimentally for semiconductors. A theoretical model is developed to describe the surface potential distribution produced by an electron beam. The distribution of generated carriers is calculated using semiconductor equations. This distribution causes a local change in surface potential, which is derived with the help of quasi-Fermi energies. The potential distribution is simulated using the model developed and measured with a scanning probe microscope (SPM) built inside a scanning electron microscope (SEM), for different samples, for different beam excitations and for different cantilever voltages of SPM. In the end, some fields of application are shown where material properties can be determined using an SEM/SPM hybrid system.

Semiconductor electrolyte photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Anderson, W. W.; Anderson, L. B.

1975-01-01

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, K., E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Takenaka, M.; Takagi, S.

2014-12-08

We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that onmore » (100) surfaces.« less

Designing Selectivity in Metal-Semiconductor Nanocrystals: Synthesis, Characterization, and Self-Assembly

NASA Astrophysics Data System (ADS)

Pavlopoulos, Nicholas George

This dissertation contains six chapters detailing recent advances that have been made in the synthesis and characterization of metal-semiconductor hybrid nanocrystals (HNCs), and the applications of these materials. Primarily focused on the synthesis of well-defined II-VI semiconductor nanorod (NR) and tetrapod (TP) based constructs of interest for photocatalytic and solar energy applications, the research described herein discusses progress towards the realization of key design rules for the synthesis of functional semiconductor nanocrystals (NCs). As such, a blend of novel synthesis, advanced characterization, and direct application of heterostructured nanoparticles are presented. The first chapter is a review summarizing the design, synthesis, properties, and applications of multicomponent nanomaterials composed of disparate semiconductor and metal domains. By coupling two compositionally distinct materials onto a single nanocrystal, synergistic properties can arise that are not present in the isolated components, ranging from self-assembly to photocatalysis. For semiconductor nanomaterials, this was first realized in the ability to tune nanomaterial dimensions from 0-D quantum dot (QD) structures to cylindrical (NR) and branched (TP) structures by exploitation of advanced colloidal synthesis techniques and understandings of NC facet reactivities. The second chapter is focused on the synthesis and characterization of well-defined CdSe-seeded-CdS (CdSe CdS) NR systems synthesized by overcoating of wurtzite (W) CdSe quantum dots with W-CdS shells. 1-dimensional NRs have been interesting constructs for applications such as solar concentrators, optical gains, and photocatalysis. Through synthetic control over CdSe CdS NR systems, materials with small and large CdSe seeds were prepared, and for each seed size, multiple NR lengths were prepared. Through transient absorption studies, it was found that band alignment did not affect the efficiency of charge localization in the CdSe core, whereas NR length had a profound effect. This work indicated that longer NRs resulted in poor exciton localization efficiencies owing to ultrafast trapping of photoexcited excitons generated in the CdS NR. The third chapter describes the synthesis of Au-tipped CdSe NRs and studies of the effects of selective metal nanoparticle deposition on the band edge energetics of these model photocatalytic systems. Previous studies had demonstrated ultrafast localization of photoexcited electrons in Au nanoparticles (AuNP) (and PtNP) deposited at the termini of CdSe and CdSe CdS NR constructs. Also, for similar systems, the hydrogen evolution reaction (HER) had been studied, for which it was found that noble metal nanoparticle tips were necessary to extract photoexcited electrons from the NR constructs and drive catalytic reactions. However, in these studies, energetic trap states, generally ascribed to surface defects on the NC surface, are often cited as contributing to loss of catalytic efficiency. Through a combination of ultraviolet photoelectron spectroscopy and waveguide based spectroelectrochemistry on films of 40 nm long CdSe NRs before and after AuNP functionalization, we found that metal deposition resulted in the formation of mid-gap energy states, which were assigned as metal-semiconductor interface states. The fourth chapter transitions from NR constructs to highly absorbing CdSe CdS TP materials, for which a single zincblende (ZB) CdSe NC is used to seed the growth of four identical CdS arms. These arms act as highly efficient light absorbers, resulting in absorption cross sections an order of magnitude greater than for comparable NR systems. In the past, many studies have been published on the striking properties of TP nanocrystals, such as dual wavelength fluorescence, multiple exciton generation, and inherent self-assembly owing to their unique geometry. Nonetheless, these materials have not been exploited for photocatalysis, primarily owing to challenges in preparing TP from ultrasmall ZB-CdSe seed size, thus preventing access to quasi-type II structures necessary for efficient photocatalysis. In this study, we successfully break through the type I/quasi-type II barrier for TP NCs, reclaiming lost ground in this field and demonstrating for the first time quasi-type II behavior in CdSe CdS TPs through transient absorption measurements. The fifth chapter continues with the study of CdSe CdS TPs, and elaborates on a new method for the selective functionalization of the highly symmetrical TP construct. TP materials have been notoriously difficult to selectively functionalize, owing to their symmetric nature. Using a novel photoinduced electrochemical Ostwald ripening process, we found that initially randomly deposited AuNPs could be ripened to a single, large AuNP tip at the end of one arm of a type I CdSe CdS TP with 40 nm arms. The sixth chapter elaborates further on the preparation of colloidal polymers, further extending the analogy between molecular and colloidal levels of synthetic control. One challenge in the field of colloidal science is the realization of new modes of self-assemble for compositionally distinct nanoparticles. In this work, it was found that Au Co nanoparticle dipole strength could be systematically varied by tuning of AuNP size on CdSe CdS nanorods/tetrapods. (Abstract shortened by ProQuest.).

Solar energy harvesting by magnetic-semiconductor nanoheterostructure in water treatment technology.

PubMed

Mahmoodi, Vahid; Bastami, Tahereh Rohani; Ahmadpour, Ali

2018-03-01

Photocatalytic degradation of toxic organic pollutants in the wastewater using dispersed semiconductor nanophotocatalysts has a number of advantages such as high activity, cost effectiveness, and utilization of free solar energy. However, it is difficult to recover and recycle nanophotocatalysts since the fine dispersed nanoparticles are easily suspended in waters. Furthermore, a large amount of photocatalysts will lead to color contamination. Thus, it is necessary to prepare photocatalysts with easy separation for the reusable application. To take advantage of high photocatalysis activity and reusability, magnetic photocatalysts with separation function were utilized. In this review, the photocatalytic principle, structure, and application of the magnetic-semiconductor nanoheterostructure photocatalysts under solar light are evaluated. Graphical abstract ᅟ.

Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-07-09

A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

The structural and optical constants of Ag2S semiconductor nanostructure in the Far-Infrared.

PubMed

Zamiri, Reza; Abbastabar Ahangar, Hossein; Zakaria, Azmi; Zamiri, Golnoosh; Shabani, Mehdi; Singh, Budhendra; Ferreira, J M F

2015-01-01

In this paper a template-free precipitation method was used as an easy and low cost way to synthesize Ag2S semiconductor nanoparticles. The Kramers-Kronig method (K-K) and classical dispersion theory was applied to calculate the optical constants of the prepared samples, such as the reflective index n(ω) and dielectric constant ε(ω) in Far-infrared regime. Nanocrystalline Ag2S was synthesized by a wet chemical precipitation method. Ag2S nanoparticle was characterized by X-ray diffraction, Scanning Electron Microscopy, UV-visible, and FT-IR spectrometry. The refinement of the monoclinic β-Ag2S phase yielded a structure solution similar to the structure reported by Sadanaga and Sueno. The band gap of Ag2S nanoparticles is around 0.96 eV, which is in good agreement with previous reports for the band gap energy of Ag2S nanoparticles (0.9-1.1 eV). The crystallite size of the synthesized particles was obtained by Hall-Williamson plot for the synthesized Ag2S nanoparticles and it was found to be 217 nm. The Far-infrared optical constants of the prepared Ag2S semiconductor nanoparticles were evaluated by means of FTIR transmittance spectra data and K-K method. Graphical abstractThe Far-infrared optical constants of Ag2S semiconductor nanoparticles.

Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

NASA Technical Reports Server (NTRS)

Hamakawa, Yoshihiro

1993-01-01

Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors.

PubMed

Irkhin, P; Najafov, H; Podzorov, V

2015-10-19

Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of "gauge effect" in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors.

Apparatus for photocatalytic treatment of liquids

NASA Technical Reports Server (NTRS)

Cooper, Gerald (Inventor); Ratcliff, Matthew A. (Inventor)

1992-01-01

Apparatus for decontaminating a contaminated fluid by using photocatalytic particles. The apparatus includes a reactor tank for holding a slurry of the contaminated fluid and the photocatalytic particles ultraviolet light irradiates the surface of the slurry, thereby activating the photocatalytic properties of the particles. Stirring blades for continuously agitate the irradiated fluid surface maintaining the particles in a suspended state within the fluid. A cross flow filter is used for separating the fluid from the semiconductor powder after the decomposition reaction is ended. The cross flow filter is occasionally back flushed to remove any caked semiconductor powder. The semiconductor powder may be recirculated back to the tank for reuse, or may be stored for future use. A series of reactor tanks may be used to gradually decompose a chemical in the fluid. The fluid may be pretreated to remove certain metal ions which interfere with the photocatalytic process. Such pretreatment may be accomplished by dispersing semiconductor particles within the fluid, which particles adsorb ions or photodeposit the metal as the free metal or its insoluble oxide or hydroxide, and then removing the semiconductor particles together with the adsorbed metal ions/oxides/hydroxide/free metal from the fluid.

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

PubMed

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

PubMed Central

2014-01-01

Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

Electron transport in high aspect ratio semiconductor nanowires and metal-semiconductor interfaces

NASA Astrophysics Data System (ADS)

Sun, Zhuting

We are facing variability problems for modern semiconductor transistors due to the fact that the performances of nominally identical devices in the scale of 10 100 nm could be dramatically different attributed to the small manufacturing variations. Different doping strategies give statistical variations in the number of dopant atom density ND in the channel. The material size gives variations in wire diameter dW. And the immediate environment of the material leads to an additional level of variability. E.g. vacuum-semiconductor interface causes variations in surface state density Ds, metal-semiconductor interface causes variations in Schottky barrier and dielectric semiconductor interface induces dielectric confinement at small scales. To approach these variability problems, I choose Si-doped GaAs nanowires as an example. I investigate transport in Si-doped GaAs nanowire (NW) samples contacted by lithographically patterned Gold-Titanium films as function of temperature T. I find a drastically different temperature dependence between the wire resistance RW, which is relatively weak, and the zero bias resistance RC, which is strong. I show that the data are consistent with a model based on a sharp donor energy level slightly above the bottom of the semiconductor conduction band and develop a simple method for using transport measurements for estimates of the doping density after nanowire growth. I discuss the predictions of effective free carrier density n eff as function of the surface state density Ds and wire size dW. I also describe a correction to the widely used model of Schottky contacts that improves thermodynamic consistency of the Schottky tunnel barrier profile and show that the original theory may underestimate the barrier conductance under certain conditions. I also provide analytical calculations for shallow silicon dopant energy in GaAs crystals, and find the presence of dielectrics (dielectric screening) and free carriers (Coulomb screening) cause a reduction of ionization energy and shift the donor energy level ED upward, accompanying conduction band EC shift downward due to band gap narrowing for doped semiconductor material. The theoretical results are in a reasonable agreement with previous experimental data. I also find that when the material reduces to nanoscale, dielectric confinement and surface depletion compete with both Coulomb screening and dielectric screening that shift the donor level ED down towards the band gap. The calculation should be appropriate for all types of semiconductors and dopant species.

The formation of organic (propolis films)/inorganic (layered crystals) interfaces for optoelectronic applications

NASA Astrophysics Data System (ADS)

Drapak, S. I.; Bakhtinov, A. P.; Gavrylyuk, S. V.; Kovalyuk, Z. D.; Lytvyn, O. S.

2008-10-01

Propolis (honeybee glue) organic films were prepared from an alcoholic solution on the surfaces of inorganic layered semiconductors (indium, gallium and bismuth selenides). Atomic force microscopy (AFM) and X-ray diffraction (XRD) are used to characterize structural properties of an organic/inorganic interfaces. It is shown that nanodimensional linear defects and nanodimensional cavities of various shapes are formed on the van der Waals (VDW) surfaces of layered crystals as a result of chemical interaction between the components of propolis (flavonoids, aminoacids and phenolic acids) and the VDW surfaces as well as deformation interaction between the VDW surfaces and propolis films during their polymerization. The nanocavities are formed as a result of the rupture of strong covalent bonds in the upper layers of layered crystals and have the shape of hexagons or triangles in the (0001) plane. The shape, lateral size and distribution of nanodimensional defects on the VDW surfaces depends on the type of crystals, the magnitude and distribution of surface stresses. We have obtained self-organized nanofold structures of propolis/InSe interface. It is established that such heterostructures have photosensitivity in the infrared range hν<1.2 eV (the values of energy gap are 1.2 eV for InSe and 3.07 eV for propolis films at room temperature).

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

PubMed

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2015-07-08

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

Surface plasmon-mediated energy transfer of electrically-pumped excitons

DOEpatents

An, Kwang Hyup; Shtein, Max; Pipe, Kevin P.

2015-08-25

An electrically pumped light emitting device emits a light when powered by a power source. The light emitting device includes a first electrode, a second electrode including an outer surface, and at least one active organic semiconductor disposed between the first and second electrodes. The device also includes a dye adjacent the outer surface of the second electrode such that the second electrode is disposed between the dye and the active organic semiconductor. A voltage applied by the power source across the first and second electrodes causes energy to couple from decaying dipoles into surface plasmon polariton modes, which then evanescently couple to the dye to cause the light to be emitted.

Surface modification using low energy ground state ion beams

NASA Technical Reports Server (NTRS)

Chutjian, Ara (Inventor); Hecht, Michael H. (Inventor); Orient, Otto J. (Inventor)

1990-01-01

A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux, and energy is presented. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation. One area of application is in the manufacture of semiconductor devices from semiconductor wafers.

Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks

NASA Astrophysics Data System (ADS)

Makoudi, Younes; Jeannoutot, Judicaël; Palmino, Frank; Chérioux, Frédéric; Copie, Guillaume; Krzeminski, Christophe; Cleri, Fabrizio; Grandidier, Bruno

2017-09-01

Understanding the physical and chemical processes in which local interactions lead to ordered structures is of particular relevance to the realization of supramolecular architectures on surfaces. While spectacular patterns have been demonstrated on metal surfaces, there have been fewer studies of the spontaneous organization of supramolecular networks on semiconductor surfaces, where the formation of covalent bonds between organics and adatoms usually hamper the diffusion of molecules and their subsequent interactions with each other. However, the saturation of the dangling bonds at a semiconductor surface is known to make them inert and offers a unique way for the engineering of molecular patterns on these surfaces. This review describes the physicochemical properties of the passivated B-Si(111)-(√3x√3) R30° surface, that enable the self-assembly of molecules into a rich variety of extended and regular structures on silicon. Particular attention is given to computational methods based on multi-scale simulations that allow to rationalize the relative contribution of the dispersion forces involved in the self-assembled networks observed with scanning tunneling microscopy. A summary of state of the art studies, where a fine tuning of the molecular network topology has been achieved, sheds light on new frontiers for exploiting the construction of supramolecular structures on semiconductor surfaces.

Synthesis of Perylene Imide Diones as Platforms for the Development of Pyrazine Based Organic Semiconductors.

PubMed

de Echegaray, Paula; Mancheño, María J; Arrechea-Marcos, Iratxe; Juárez, Rafael; López-Espejo, Guzmán; López Navarrete, J Teodomiro; Ramos, María Mar; Seoane, Carlos; Ortiz, Rocío Ponce; Segura, José L

2016-11-18

There is a great interest in peryleneimide (PI)-containing compounds given their unique combination of good electron accepting ability, high abosorption in the visible region, and outstanding chemical, thermal, and photochemical stabilities. Thus, herein we report the synthesis of perylene imide derivatives endowed with a 1,2-diketone functionality (PIDs) as efficient intermediates to easily access peryleneimide (PI)-containing organic semiconductors with enhanced absorption cross-section for the design of tunable semiconductor organic materials. Three processable organic molecular semiconductors containing thiophene and terthiophene moieties, PITa, PITb, and PITT, have been prepared from the novel PIDs. The tendency of these semiconductors for molecular aggregation have been investigated by NMR spectroscopy and supported by quantum chemical calculations. 2D NMR experiments and theoretical calculations point to an antiparallel π-stacking interaction as the most stable conformation in the aggregates. Investigation of the optical and electrochemical properties of the materials is also reported and analyzed in combination with DFT calculations. Although the derivatives presented here show modest electron mobilities of ∼10 -4 cm 2 V -1 s -1 , these preliminary studies of their performance in organic field effect transistors (OFETs) indicate the potential of these new building blocks as n-type semiconductors.

Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

2017-04-01

We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering.

PubMed

Tao, Ye; Xu, Lijia; Zhang, Zhen; Chen, Runfeng; Li, Huanhuan; Xu, Hui; Zheng, Chao; Huang, Wei

2016-08-03

Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor-resonance-acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic.

Holographic patterning of organic-inorganic photopolymerizable nanocomposites

NASA Astrophysics Data System (ADS)

Sakhno, Oksana V.; Goldenberg, Leonid M.; Smirnova, Tatiana N.; Stumpe, J.

2009-09-01

We present here novel easily processible organic-inorganic nanocomposites suitable for holographic fabrication of diffraction optical elements (DOE). The nanocomposites are based on photocurable acrylate monomers and inorganic nanoparticles (NP). The compatibility of inorganic NP with monomers was achieved by capping the NP surface with proper organic shells. Surface modification allows to introduce up to 50wt.% of inorganic NP in organic media. Depending on the NP nature (metal oxides, phosphates, semiconductors, noble metals) and their properties, the materials for both efficient DOE and multifunctional elements can be designed. Organic-inorganic composites prepared have been successfully used for the effective inscription of periodic volume refractive index structures using the holographic photopolymerization method. The nanocomposite preparation procedure, their properties and optical performance of holographic gratings are reported. The use of functional NP makes it possible to obtain effective holographic gratings having additional physical properties such as light-emission or NLO. Some examples of such functional polymer-NP structures and their possible application fields are presented. The combination of easy photo-patterning of soft organic compounds with physical properties of inorganic materials in new nanocomposites and the flexibility of the holographic patterning method allow the fabrication of mono- and multifunctional one- and multi-dimensional passive or active optical and photonic elements.

Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors

PubMed Central

Khosroabadi, Akram A.; Gangopadhyay, Palash; Hernandez, Steven; Kim, Kyungjo; Peyghambarian, Nasser; Norwood, Robert A.

2015-01-01

We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO) structures, with feature sizes below 100 nm and a controlled surface architecture. The optical and electrical properties of these core shell electrodes, including the surface plasmon frequency, can be tuned by suitably changing the order and thickness of the dielectric layers. By varying the dimensions of the nanopillars, the surface plasmon wavelength of the nanopillar Ag can be tuned from 650 to 690 nm. Adding layers of ITO to the structure further shifts the resonance wavelength toward the IR region and, depending on the sequence and thickness of the layers within the structure, we show that such structures can be applied in sensing devices including enhancing silicon as a photodetection material. PMID:28793489

Photoinduced energy transfer in transition metal complex oligomers

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1997-06-01

The work done over the past three years has been directed toward the preparation, characterization and photophysical examination of mono- and bimetallic diimine complexes. The work is part of a broader project directed toward the development of stable, efficient, light harvesting arrays of transition metal complex chromophores. One focus has been the synthesis of rigid bis-bidentate and bis-tridentate bridging ligands. The authors have managed to make the ligand bphb in multigram quantities from inexpensive starting materials. The synthetic approach used has allowed them to prepare a variety of other ligands which may have unique applications (vide infra). They have prepared,more » characterized and examined the photophysical behavior of Ru(II) and Re(I) complexes of the ligands. Energy donor/acceptor complexes of bphb have been prepared which exhibit nearly activationless energy transfer. Complexes of Ru(II) and Re(I) have also been prepared with other polyunsaturated ligands in which two different long lived (> 50 ns) excited states exist; results of luminescence and transient absorbance measurements suggest the two states are metal-to-ligand charge transfer and ligand localized {pi}{r_arrow}{pi}* triplets. Finally, the authors have developed methods to prepare polymetallic complexes which are covalently bound to various surfaces. The long term objective of this work is to make light harvesting arrays for the sensitization of large band gap semiconductors. Details of this work are provided in the body of the report.« less

A Semiconductor Microlaser for Intracavity Flow Cytometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhil, O.; Copeland, G.C.; Dunne, J.L.

1999-01-20

Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

DTIC Science & Technology

1982-05-01

semiconductor Schottky-barrier contacts are used in many semiconductor devices, including switches, rectifiers, varactors , IMPATTs, mixer and detector...ionic materials such as most of the II-VI compound semiconductors (e.g. ZnS and ZnO) and the transition-metal oxides , the barrier height is strongly...the alloying process described above is nonuniformity, due to the incomplete removal of residual surface oxides prior to the evaporation of the metal

An Automatic System of Testing the Best Stress of Installation for Semiconductor Refrigeration Piece

NASA Astrophysics Data System (ADS)

Chen, Hongyan; Song, Ping

Concerning the problems of the impact on the factors of installation about semiconductor refrigeration piece are rarely studied in China and abroad, a reasonable structure of test device is designed, using stepper motor to test the temperature of the cold surface under different stress of installation to get the best stress of installation for the semiconductor refrigeration piece. Experiments shows that the system is of good noise immunity, high controlling and measuring precision.

Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachleben, Joseph Robert

1993-09-01

Semiconductor nanocrystals, small biomolecules, and 13C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution 1H and 13C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10 -8 s -1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O 2 and ultraviolet. A method formore » measuring 14N- 1H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T 1 and T 2 experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in 13C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.« less

Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

NASA Astrophysics Data System (ADS)

Sachleben, J. R.

1993-09-01

Semiconductor nanocrystals, small biomolecules, and C-13 enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution H-1 and C-13 liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 angstrom. Internal motion is estimated to be slow with a correlation time greater than 10(exp -8) s(exp -1). The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring (N-14)-(H-1) J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T(sub 1) and T(sub 2) experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in C-13 enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

SiGe derivatization by spontaneous reduction of aryl diazonium salts

NASA Astrophysics Data System (ADS)

Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

2013-10-01

Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

2018-02-01

The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1-xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal capacitance-voltage (C-V) characteristics in the low-frequency and high-frequency approximations. The concentrations of the majority carriers in the near-surface semiconductor layer are determined from the values of the capacitances in the minima of low-frequency C-V curves. For MIS structures based on p-Hg1-xCdxTe, the effect of the presence of the compositionally graded layer on the hole concentration in the near-surface semiconductor layer, determined from capacitive measurements, has not been established. Perhaps this is due to the fact that the concentration of holes in the near-surface layer largely depends on the type of dielectric coating and the regimes of its application. For MIS structures based on n-Hg1-x Cd x Te (x = 0.22-0.23) without a graded-gap layer, the electron concentration determined by the proposed method is close to the average concentration determined by the Hall measurements. The electron concentration in the near-surface semiconductor layer of the compositionally graded n-Hg1-x Cd x Te (x = 0.22-0.23) found from the minimum capacitance value is much higher than the average electron concentration determined by the Hall measurements. The results are qualitatively explained by the creation of additional intrinsic donor-type defects in the near-surface compositionally graded layer of n-Hg1-x Cd x Te.

Direct grafting of long-lived luminescent indicator dyes to GaN light-emitting diodes for chemical microsensor development.

PubMed

López-Gejo, Juan; Navarro-Tobar, Álvaro; Arranz, Antonio; Palacio, Carlos; Muñoz, Elías; Orellana, Guillermo

2011-10-01

Two new methods for covalent functionalization of GaN based on plasma activation of its surface are presented. Both of them allow attachment of sulfonated luminescent ruthenium(II) indicator dyes to the p- and n-type semiconductor as well as to the surface of nonencapsulated chips of GaN light-emitting diodes (blue LEDs). X-ray photoelectron spectroscopy analysis of the functionalized semiconductor confirms the formation of covalent bonds between the GaN surface and the dye. Confocal fluorescence microscopy with single-photon-timing (SPT) detection has been used for characterization of the functionalized surfaces and LED chips. While the ruthenium complex attached to p-GaN under an oxygen-free atmosphere gives significantly long mean emission lifetimes for the indicator dye (ca. 2000 ns), the n-GaN-functionalized surfaces display surprisingly low values (600 ns), suggesting the occurrence of a quenching process. A photoinduced electron injection from the dye to the semiconductor conduction band, followed by a fast back electron transfer, is proposed to be responsible for the excited ruthenium dye deactivation. This process invalidates the use of the n-GaN/dye system for sensing applications. However, for p-GaN/dye materials, the luminescence decay accelerates in the presence of O(2). The moderate sensitivity is attributed to the fact that only a monolayer of indicator dye is anchored to the semiconductor surface but serves as a demonstrator device. Moreover, the luminescence decays of the functionalized LED chip measured with excitation of either an external (laser) source or the underlying LED emission (from p-GaN/InGaN quantum wells) yield the same mean luminescence lifetime. These results pave the way for using advanced LEDs to develop integrateable optochemical microsensors for gas analysis. © 2011 American Chemical Society

Specific peptide for functionalization of GaN

NASA Astrophysics Data System (ADS)

Estephan, E.; Larroque, C.; Cloitre, T.; Cuisinier, F. J. G.; Gergely, C.

2008-04-01

Nanobiotechnology aims to exploit biomolecular recognition and self-assembly capabilities for integrating advanced materials into medicine and biology. However frequent problems are encountered at the interface of substrate-biological molecule, as the direct physical adsorption of biological molecules is dependent of unpredictable non-specific interactions with the surface, often causing their denaturation. Therefore, a proper functionalization of the substrate should avoid a loss of biological activity. In this work we address the functionalization of the semiconductor GaN (0001) for biosensing applications. The basic interest of using III-V class semiconductors is their good light emitting properties and a fair chemical stability that allows various applications of these materials. The technology chosen to elaborate GaN-specific peptides is the combinatorial phage-display method, a biological screening procedure based on affinity selection. An M13 bacteriophage library has been used to screen 10 10 different peptides against the GaN (0001) surface to finally isolate one specific peptide. The preferential attachment of the biotinylated selected peptide onto the GaN (0001), in close proximity to a surface of different chemical and structural composition has been demonstrated by fluorescence microscopy. Further physicochemical studies have been initiated to evaluate the semiconductor-peptide interface and understand the details in the specific recognition of peptides for semiconductor substrates. Fourier Transform Infrared spectroscopy in Attenuated Total Reflection mode (FTIR-ATR) has been employed to prove the presence of peptides on the surface. Our Atomic Force Microscopy (AFM) studies on the morphology of the GaN surface after functionalization revealed a total surface coverage by a very thin, homogeneous peptide layer. Due to its good biocompatibility, functionalized GaN devices might evolve in a new class of implantable biosensors for medical applications.

A Semimetal Nanowire Rectifier: Balancing Quantum Confinement and Surface Electronegativity.

PubMed

Sanchez-Soares, Alfonso; Greer, James C

2016-12-14

For semimetal nanowires with diameters on the order of 10 nm, a semimetal-to-semiconductor transition is observed due to quantum confinement effects. Quantum confinement in a semimetal lifts the degeneracy of the conduction and valence bands in a "zero" gap semimetal or shifts energy levels with a "negative" overlap to form conduction and valence bands. For semimetal nanowires with diameters less than 10 nm, the band gap energy can be significantly larger than the thermal energy at room temperature resulting in a new class of semiconductors suitable for nanoelectronics. As a nanowire's diameter is reduced, its surface-to-volume ratio increases rapidly leading to an increased impact of surface chemistry on its electronic structure. Energy level shifts to states in the vicinity of the Fermi energy with varying surface electronegativity are shown to be comparable in magnitude to quantum confinement effects arising in nanowires with diameters of a few nanometer; these two effects can counteract one another leading to semimetallic behavior at nanowire cross sections at which confinement effects would otherwise dominate. Abruptly changing the surface terminating species along the length of a nanowire can lead to an abrupt change in the surface electronegativity. This can result in the formation of a semimetal-semiconductor junction within a monomaterial nanowire without impurity doping nor requiring the formation of a heterojunction. Using density functional theory in tandem with a Green's function approach to determine electronic structure and charge transport, respectively, current rectification is calculated for such a junction. Current rectification ratios of the order of 10 3 -10 5 are predicted at applied biases as low as 300 mV. It is concluded that rectification can be achieved at essentially molecular length scales with conventional biasing, while rivaling the performance of macroscopic semiconductor diodes.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Micro-nano zinc oxide film fabricated by biomimetic mineralization: Designed architectures for SERS substrates

NASA Astrophysics Data System (ADS)

Lu, Fei; Guo, Yue; Wang, Yunxin; Song, Wei; Zhao, Bing

2018-05-01

In this study, we have investigated the effect of the surface morphologies of the zinc oxide (ZnO) substrates on surface enhanced Raman spectroscopy (SERS). During synthetic process, the self-assembly monolayers (SAMs) with different terminal groups are used as templates to induce the nucleation and growth of Zn(NO3)2·6H2O crystals, then different morphologies micro-nano ZnO powders are obtained by annealing Zn(NO3)2·6H2O crystals at 450 °C. The products obtained at different conditions are characterized by means of X-ray diffraction (XRD) patterns, scanning electron microscopy (SEM) and Raman spectra. The as-prepared ZnO micro-sized particles have been used the efficient Surface enhanced Raman scattering (SERS) substrates, and the SERS signals of 4-mercaptopyridine (Mpy) probe molecules are much influenced by the morphologies of the ZnO structures. Results indicated that the more (0001) facets appear in the of ZnO morphology, the greater degree of charge-transfer (PCT) for the SERS enhancement on the surface of semiconductors is achieved. The chemical interaction between ZnO structures and Mpy molecules plays a very important role in the SERS enhancement.

Chelating ligands for nanocrystals' surface functionalization.

PubMed

Querner, Claudia; Reiss, Peter; Bleuse, Joël; Pron, Adam

2004-09-22

A new family of ligands for the surface functionalization of CdSe nanocrystals is proposed, namely alkyl or aryl derivatives of carbodithioic acids (R-C(S)SH). The main advantages of these new ligands are as follows: they nearly quantitatively exchange the initial surface ligands (TOPO) in very mild conditions; they significantly improve the resistance of nanocrystals against photooxidation because of their ability of strong chelate-type binding to metal atoms; their relatively simple preparation via Grignard intermediates facilitates the development of new bifunctional ligands containing, in addition to the anchoring carbodithioate group, a second function, which enables the grafting of molecules or macromolecules of interest on the nanocrystal surface. To give an example of this approach, we report, for the first time, the grafting of an electroactive oligomer from the polyaniline family-aniline tetramer-on CdSe nanocrystals after their functionalization with 4-formyldithiobenzoic acid. The grafting proceeds via a condensation reaction between the aldehyde group of the ligand and the terminal primary amine group of the tetramer. The resulting organic/inorganic hybrid exhibits complete extinction of the fluorescence of its constituents, indicating efficient charge or energy transfer between the organic and the inorganic semiconductors.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Witczak, Przemysław; Kempisty, Pawel; Strak, Pawel

2015-11-15

Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gainmore » of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.« less

Lack of enhanced photocatalytic formation of iodine on particulate semiconductor mixtures.

PubMed

Karunakaran, C; Anilkumar, P; Vinayagamoorthy, P

2012-12-01

Under UV-A light illumination, formation of iodine from iodide ion on the surfaces of anatase TiO(2), ZnO, Fe(2)O(3), CeO(2), MoO(3), Bi(2)O(3), and Nb(2)O(5) increases with the concentration of iodide ion, airflow rate and light intensity and conform to the Langmuir-Hinshelwood kinetic model. Measurement of the particle size of the semiconductor oxides by light scattering method and deduction of the same from the determined specific surface area show that the oxide particles agglomerate in suspension. However, mixtures of any two listed particulate semiconductors do not show enhanced photocatalytic formation of iodine indicating absence of interparticle charge transfer. The results are rationalized. Copyright © 2012 Elsevier B.V. All rights reserved.

Whatever happened to silicon carbide. [semiconductor devices

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1981-01-01

The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.

High Temperature Superconductor/Semiconductor Hybrid Microwave Devices and Circuits

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.; Miranda, Felix A.

1999-01-01

Contents include following: film deposition technique; laser ablation; magnetron sputtering; sequential evaporation; microwave substrates; film characterization at microwave frequencies; complex conductivity; magnetic penetration depth; surface impedance; planar single-mode filters; small antennas; antenna arrays phase noise; tunable oscillations; hybrid superconductor/semiconductor receiver front ends; and noise modeling.

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

PubMed Central

Maier, Konrad; Helwig, Andreas; Müller, Gerhard; Hille, Pascal; Eickhoff, Martin

2015-01-01

In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high. PMID:28793583

Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jaouad, A.; Aimez, V.; Aktik, Ç.; Bellatreche, K.; Souifi, A.

2004-05-01

Metal-insulator-semiconductor (MIS) capacitors were fabricated on n-GaAs(100) substrate using (NH4)2S surface passivation and low-frequency plasma-enhanced chemical vapor deposited silicon nitride as gate insulators. The electrical properties of the fabricated MIS capacitors were analyzed using high-frequency capacitance-voltage and conductance-voltage measurements. The high concentration of hydrogen present during low-frequency plasma deposition of silicon nitride enhances the passivation of GaAs surface, leading to the unpinning of the Fermi level and to a good modulation of the surface potential by gate voltage. The electrical properties of the insulator-semiconductor interface are improved after annealing at 450 °C for 60 s, as a significant reduction of the interface fixed charges and of the interface states density is put into evidence. The minimum interface states density was found to be about 3×1011 cm-2 eV-1, as estimated by the Terman method. .

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

PubMed

Jana, Dipankar; Porwal, S; Sharma, T K; Kumar, Shailendra; Oak, S M

2014-04-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

Analysis of tuning methods in semiconductor frequency-selective surfaces

NASA Astrophysics Data System (ADS)

Shemelya, Corey; Palm, Dominic; Fip, Tassilo; Rahm, Marco

2017-02-01

Advanced technology, such as sensing and communication equipment, has recently begun to combine optically sensitive nano-scale structures with customizable semiconductor material systems. Included within this broad field of study is the aptly named frequency-selective surface; which is unique in that it can be artificially designed to produce a specific electromagnetic or optical response. With the inherent utility of a frequency-selective surface, there has been an increased interest in the area of dynamic frequency-selective surfaces, which can be altered through optical or electrical tuning. This area has had exciting break throughs as tuning methods have evolved; however, these methods are typically energy intensive (optical tuning) or have met with limited success (electrical tuning). As such, this work investigates multiple structures and processes which implement semiconductor electrical biasing and/or optical tuning. Within this study are surfaces ranging from transmission meta-structures to metamaterial surface-waves and the associated coupling schemes. This work shows the utility of each design, while highlighting potential methods for optimizing dynamic meta-surfaces. As an added constraint, the structures were also designed to operate in unison with a state-of-the-art Ti:Sapphire Spitfire Ace and Spitfire Ace PA dual system (12 Watt) with pulse front matching THz generation and an EOS detection system. Additionally, the Ti:Sapphire laser system would provide the means for optical tunablity, while electrical tuning can be obtained through external power supplies.

Efficient Solar Energy Conversion Systems for Hydrogen Production from Water using Semiconductor Photoelectrodes and Photocatalysts

NASA Astrophysics Data System (ADS)

Sayama, K.; Arai, T.

2008-02-01

Efficient solar energy conversion system for hydrogen production from water, solar-hydrogen system, is one of most important technologies for genuinely sustainable development of the society in the world wide scale. However, there are many problems to breakthrough such as low solar-to-H2 efficiency (STH), high cost, low stability, etc in order to realize the system practically and economically. The solar-hydrogen systems using semiconductors are mainly classified as follows; solar cell-electrolysis system, semiconductor photoelectrode system, and photocatalyst system. There are various merits and demerits in each system. The solar cell-electrolysis system is very efficient but is very high cost. The photocatalyst system is very simple and relatively low cost, but the efficiency is still very low. On the other hand, various semiconductor systems with high efficiency have been investigated. A high STH more than 10% was reported using non-oxide semiconductor photoelectrodes such as InGaP, while the preparation methods were costly. In a European project, some simple oxide semiconductor photoelectrodes such as Fe2O3 and WO3 are mainly studied. Here, we investigated various photoelectrodes using mixed metal oxide especially on BiVO4 semiconductor, and a high throughput screening system of new visible light responsible semiconductors for photoelectrode and photocatalyst. Moreover, photocatalysis-electrolysis hybrid system for economical H2 production is studied to overcome the demerit of photocatalyst system on the gas separation and low efficiency.

Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

NASA Astrophysics Data System (ADS)

Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

2015-11-01

The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

Valley spin polarization of Tl/Si(111)

NASA Astrophysics Data System (ADS)

Stolwijk, Sebastian D.; Schmidt, Anke B.; Sakamoto, Kazuyuki; Krüger, Peter; Donath, Markus

2017-11-01

The metal/semiconductor hybrid system Tl/Si(111)-(1 ×1 ) exhibits a unique Tl-derived surface state with remarkable properties. It lies within the silicon band gap and forms spin-momentum-locked valleys close to the Fermi energy at the K ¯ and K¯' points. These valleys are completely spin polarized with opposite spin orientation at K ¯ and K¯' and show a giant spin splitting of more than 0.5 eV. We present a detailed preparation study of the surface system and demonstrate that the electronic valleys are extremely robust, surviving exposure to 100 L hydrogen and 500 L oxygen. We investigate the influence of additional Tl atoms on the spin-polarized valleys. By combining photoemission and inverse photoemission, we prove the existence of fully spin-polarized valleys crossing the Fermi level. Moreover, these metallic valleys carry opposite Berry curvature at K ¯ and K¯', very similar to WSe2, promising a large spin Hall effect. Thus, Tl/Si(111)-(1 ×1 ) possesses all necessary key properties for spintronic applications.

Superconducting magnesium diboride films on Si with Tc0˜24 K grown via vacuum annealing from stoichiometric precursors

NASA Astrophysics Data System (ADS)

Zhai, H. Y.; Christen, H. M.; Zhang, L.; Cantoni, C.; Paranthaman, M.; Sales, B. C.; Christen, D. K.; Lowndes, D. H.

2001-10-01

Superconducting magnesium diboride films with Tc0˜24 K and sharp transition ˜1 K were prepared on Si by pulsed-laser deposition from stoichiometric MgB2 target. Contrary to previous reports, anneals at 630 °C and a background of 2×10-4Ar/4%H2 were performed without the requirement of Mg vapor or Mg cap layer. This integration of superconducting MgB2 film on Si may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy show that the films have a uniform surface morphology and thickness. Energy-dispersive spectroscopy study reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low Tc for those in situ annealed films, while the use of Si as a substrate does not result in a decrease in Tc as compared to other substrates.

Observation of a two-dimensional liquid of Fröhlich polarons at the bare SrTiO3 surface

PubMed Central

Chen, Chaoyu; Avila, José; Frantzeskakis, Emmanouil; Levy, Anna; Asensio, Maria C.

2015-01-01

The polaron is a quasi-particle formed by a conduction electron (or hole) together with its self-induced polarization in a polar semiconductor or an ionic crystal. Among various polarizable examples of complex oxides, strontium titanate (SrTiO3) is one of the most studied. Here we examine the carrier type and the interplay of inner degrees of freedom (for example, charge, lattice, orbital) in SrTiO3. We report the experimental observation of Fröhlich polarons, or large polarons, at the bare SrTiO3 surface prepared by vacuum annealing. Systematic analyses of angle-resolved photoemission spectroscopy and X-ray absorption spectra show that these Fröhlich polarons are two-dimensional and only exist with inversion symmetry breaking by two-dimensional oxygen vacancies. Our discovery provides a rare solvable field theoretical model, and suggests the relevance of large (bi)polarons for superconductivity in perovskite oxides, as well as in high-temperature superconductors. PMID:26489376

A facile strategy to decorate Cu₉S₅ nanocrystals on polyaniline nanowires and their synergetic catalytic properties.

PubMed

Lu, Xiao-feng; Bian, Xiu-jie; Li, Zhi-cheng; Chao, Dan-ming; Wang, Ce

2013-10-16

Here, we demonstrated a novel method to decorate Cu₉S₅ nanocrystals on polyaniline (PANI) nanowires using the dopant of mercaptoacetic acid (MAA) in the PANI matrix as the sulfur source under a hydrothermal reaction. TEM images showed that Cu₉S₅ nanocrystals with a size in the range of 5-20 nm were uniformly formed on the surface of PANI nanowires. Significantly, the as-prepared PANI/Cu₉S₅ composite nanowires have been proven to be novel peroxidase mimics toward the oxidation of the peroxidase substrate 3,3',5,5'-tetramethylbenzidine (TMB) in the presence of H₂O₂. Due to the synergetic effects between polyaniline nanowires and Cu₉S₅ nanocrystals, the obtained PANI/Cu₉S₅ composite nanowires exhibit superior catalytic activity over the independent components. This work not only presents a simple and versatile method to decorate semiconductor nanocrystals on the surface of conducting polymer nanostructures, but also provides fundamental guidelines for further investigations into the synergetic effect between conducting polymers and other materials.

Study on the high-power semi-insulating GaAs PCSS with quantum well structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luan, Chongbiao; Wang, Bo; Huang, Yupeng

A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity ofmore » the AlGaAs/GaAs PCSS was larger than 10{sup 6} shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.« less

Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

NASA Astrophysics Data System (ADS)

Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

2016-08-01

Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir-Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

Surface Conduction in III-V Semiconductor Infrared Detector Materials

NASA Astrophysics Data System (ADS)

Sidor, Daniel Evan

III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are ineffectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture offers a potential solution. III-V bulk unipolar barrier detectors that effectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated.

Sulfide semiconductor materials prepared by high-speed electrodeposition and discussion of electrochemical reaction mechanism

NASA Astrophysics Data System (ADS)

Okamoto, Naoki; Kataoka, Kentaro; Saito, Takeyasu

2017-07-01

A manufacturing method for SnS using a one-step electrochemical technique was developed. The sulfide semiconductor was formed by electrodeposition using an aqueous bath at low temperatures. The sulfide semiconductor particles produced were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The highest current density at which SnS was formed was 1800 mA/cm2 at a bath temperature of 293 K, which is 36 times larger than that in a previous deposition process. Analysis of the chronoamperometric current-time transients indicated that in the potential range from -1100 to -2000 mV vs saturated calomel electrode (SCE), the electrodeposition of SnS can be explained by an instantaneous nucleation model.

Sulfur as a surface passivation for InP

NASA Technical Reports Server (NTRS)

Iyer, R.; Chang, R. R.; Lile, D. L.

1988-01-01

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

Studying Some of Electrical and Mechanical Properties for Kevlar Fiber Reinforced Epoxy

NASA Astrophysics Data System (ADS)

Rafeeq, Sewench N.; Hussein, Samah M.

2011-12-01

As ordinary known the ability of synthesizing electrical conducting polymer composites is possible but with poor mechanical properties, for the solution of this problem, we carried out this study in order to obtain that both properties. Three methods were applied for preparing the conductive polyaniline (PANI) composites using Kevlar fiber fabric as substrate for the deposition of the PANI at one time and the prepared composite (EP/Kevlar fiber) at others. The chemical oxidative method was adopted for polymerization of the aniline and simultaneously protonated of PANI with a hydrochloric acid at concentration (1M). Two kinds of oxidation agents (FeCl3.6H2O) and ((NH4)2S2O8) were used. The electrical measurements indicate the effect of each preparation method, kind of oxidant agent and the kind of mat erial which PANI deposited on the electrical results. The conductivity results showed that the prepared composites lie within semiconductors region. Temperature—dependence of electric conductivity results showed semiconductors and conductors behavior of this material within the applied temperature ranges. The mechan ical property (tensile strength) was studied. X-ray diffraction study showed the crystalline structure for EP/Kevlar fiber/PANI composites prepared by the three methods. These results gave optimism to the synthesis of conductive polymer composites with excellent mechanical properties..

New Methods of Sample Preparation for Atom Probe Specimens

NASA Technical Reports Server (NTRS)

Kuhlman, Kimberly, R.; Kowalczyk, Robert S.; Ward, Jennifer R.; Wishard, James L.; Martens, Richard L.; Kelly, Thomas F.

2003-01-01

Magnetite is a common conductive mineral found on Earth and Mars. Disk-shaped precipitates approximately 40 nm in diameter have been shown to have manganese and aluminum concentrations. Atom-probe field-ion microscopy (APFIM) is the only technique that can potentially quantify the composition of these precipitates. APFIM will be used to characterize geological and planetary materials, analyze samples of interest for geomicrobiology; and, for the metrology of nanoscale instrumentation. Prior to APFIM sample preparation was conducted by electropolishing, the method of sharp shards (MSS), or Bosch process (deep reactive ion etching) with focused ion beam (FIB) milling as a final step. However, new methods are required for difficult samples. Many materials are not easily fabricated using electropolishing, MSS, or the Bosch process, FIB milling is slow and expensive, and wet chemistry and the reactive ion etching are typically limited to Si and other semiconductors. APFIM sample preparation using the dicing saw is commonly used to section semiconductor wafers into individual devices following manufacture. The dicing saw is a time-effective method for preparing high aspect ratio posts of poorly conducting materials. Femtosecond laser micromachining is also suitable for preparation of posts. FIB time required is reduced by about a factor of 10 and multi-tip specimens can easily be fabricated using the dicing saw.

Understanding Reflectance Anisotropy: Surface-structure signatures and bulk-related features

NASA Astrophysics Data System (ADS)

Gero Schmidt, W.

2000-03-01

Reflectance anisotropy spectroscopy (RAS) is becoming an increasingly important tool for in situ control of semiconductor processing with real-time feedback. The understanding and interpretation of the measured spectra, however, has been hampered by relatively slow theoretical progress. Using a massively parallel real-space multigrid technique [1] and ab initio pseudopotentials we calculated the optical spectra of a variety of III-V(001) growth structures and stepped Si(111):H surfaces. Our results agree well with experiment, notably with respect to the stoichiometric changes induced by different surface preparations. We identify two distinct sources for the optical anisotropy: (i) highly structure-dependent features are caused by transitions involving electronic surface states, and (ii) derivative-like oscillations or peaks at the bulk critical point energies arise from transitions between surface-modified bulk wave functions. The latter are nearly independent from the actual surface structure. The agreement between the calculated and measured spectra is further improved by applying quasi-particle corrections obtained from numerically efficient, simplified GW calculations [2]. The combination of converged first-principles calculations with an approximate treatment of many-particle effects allows the reliable identification of ``surface-structure fingerprints'' in the optical spectra, paving the way for the exploitation of their rich technological potential. [1ex] [1] EL Briggs, DJ Sullivan, J Bernholc, Phys. Rev. B 54, 14362 (1996). [2] F Bechstedt, R Del Sole, G Cappellini, L Reining, Solid State Commun. 84, 765 (1992).

Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors

PubMed Central

Irkhin, P.; Najafov, H.; Podzorov, V.

2015-01-01

Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of “gauge effect” in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors. PMID:26478121

Metal complexes of alkyl-aryl dithiocarbamates: Structural studies, anticancer potentials and applications as precursors for semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Andrew, Fartisincha P.; Ajibade, Peter A.

2018-03-01

Dithiocarbamates are versatile ligands able to stabilize wide range of metal ions in their various oxidation states with the partial double bond character of Csbnd N and Csbnd S of thioureide moiety. Variation of the substituents attached to the nitrogen atom of dithiocarbamate moiety generates various intermolecular interactions, which lead to different structural arrangement in the solid state. The presence of bulky substituents on the N atom obviates the supramolecular aggregation via secondary Msbnd S interactions whereas smaller substituents encourage such aggregation that results in their wide properties and applications. Over the past decades, the synthesis and structural studies of metal complexes of dithiocarbamates have received considerable attention as potential anticancer agents with various degree of DNA binding affinity and cytotoxicity and as single molecule precursors for the preparation of semiconductor nanocrystals. In this paper, we review the synthesis, structural studies, anticancer potency and the use of alkyl-phenyl dithiocarbamate complexes as precursors for the preparation of semiconductor nanocrystals. The properties of these compounds and activities are ascribed to be due to either the dithiocarbamate moieties, the nature or type of the substituents around the dithiocarbamate backbone and the central metal ions or combination of these factors.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, Edith D.

1992-01-01

A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, E.D.

1992-07-21

A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

Mechanism of amino acid interaction with silicon nitride surface during chemical mechanical planarization

NASA Astrophysics Data System (ADS)

America, William George

Chemical-Mechanical Planarization (CMP) has become an essential technology for making modern semiconductor devices. This technique was originally applied to overcome the depth of focus limitations of lithography tools during pattern development of metal and dielectric films. As features of the semiconductor device became smaller the lithographic process shifted to shorter exposure wavelengths and the useable depth of focus became smaller. The topography differences on the wafer's surface from all of the previous processing steps became greater than the exposure tools could properly project. CMP helped solve this problem by bringing the features of the wafer surface to the same plane. As semiconductor fabrication technology progressed further, CMP was applied to other areas of the process, including shallow trench isolation and metal line Damascene processing. In its simplest application, CMP polishes on features projecting upward and higher than the average surface. These projections experience more work and are polished faster. Given sufficient time the surface becomes essentially flat, on a micro-scale, and the lithographic projection tools has the same plane onto which to focus. Thus, the pattern is properly and uniformly exposed and subsequent reactive ion etching (RIE) steps are executed. This technique was initially applied to later steps in the wafer processing scheme to render a new flat surface at each metal layer. Building on this success, CMP has been applied to a broad range of steps in the wafer processing particularly where surface topography warrants and when RIE of dielectric or metallic films is not practical. CMP has seen its greatest application in semiconductor logic and memory devices and most recently, a Damascene processing for copper lines and shallow trench isolation. This pattern dependent CMP issue is explored in this thesis as it pertains primarily to shallow trench isolation CMP coupled with a highly selective slurry chemistry.

Observation of Structure of Surfaces and Interfaces by Synchrotron X-ray Diffraction: Atomic-Scale Imaging and Time-Resolved Measurements

NASA Astrophysics Data System (ADS)

Wakabayashi, Yusuke; Shirasawa, Tetsuroh; Voegeli, Wolfgang; Takahashi, Toshio

2018-06-01

The recent developments in synchrotron optics, X-ray detectors, and data analysis algorithms have enhanced the capability of the surface X-ray diffraction technique. This technique has been used to clarify the atomic arrangement around surfaces in a non-contact and nondestructive manner. An overview of surface X-ray diffraction, from the historical development to recent topics, is presented. In the early stage of this technique, surface reconstructions of simple semiconductors or metals were studied. Currently, the surface or interface structures of complicated functional materials are examined with sub-Å resolution. As examples, the surface structure determination of organic semiconductors and of a one-dimensional structure on silicon are presented. A new frontier is time-resolved interfacial structure analysis. A recent observation of the structure and dynamics of the electric double layer of ionic liquids, and an investigation of the structural evolution in the wettability transition on a TiO2 surface that utilizes a newly designed time-resolved surface diffractometer, are presented.

Distributed feedback acoustic surface wave oscillator

NASA Technical Reports Server (NTRS)

Elachi, C.

1974-01-01

Using a simple model, the feasibility of applying the distributed feedback concept to the generation of acoustic surface waves is evaluated. It is shown that surface corrugation of the piezoelectric boundary in a semiconductor-piezoelectric surface acoustic wave amplifier could lead to self-sustained oscillations.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

SnS2 Thin Film Deposition by Spray Pyrolysis

NASA Astrophysics Data System (ADS)

Jaber, Abdallah Yahia; Alamri, Saleh Noaiman; Aida, Mohammed Salah

2012-06-01

Tin disulfide (SnS2) thin films have been synthesized using a simplified spray pyrolysis technique using a perfume atomizer. The films were deposited using two different solutions prepared by the dilution of SnCl2 and thiourea in distilled water and in methanol. The obtained films have a microcrystalline structure. The film deposited using methanol as the solvent is nearly stochiometric SnS2 with a spinel phase having a (001) preferential orientation. The film prepared with an aqueous solution is Sn-rich. Scanning electronic microscopy (SEM) images reveal that the film deposited with the aqueous solution is rough and is formed with large wires. However, the film deposited with methanol is dense and smooth. Conductivity measurements indicate that the aqueous solution leads to an n-type semiconductor, while methanol leads to a p-type semiconductor.

Understanding polymorphism in organic semiconductor thin films through nanoconfinement.

PubMed

Diao, Ying; Lenn, Kristina M; Lee, Wen-Ya; Blood-Forsythe, Martin A; Xu, Jie; Mao, Yisha; Kim, Yeongin; Reinspach, Julia A; Park, Steve; Aspuru-Guzik, Alán; Xue, Gi; Clancy, Paulette; Bao, Zhenan; Mannsfeld, Stefan C B

2014-12-10

Understanding crystal polymorphism is a long-standing challenge relevant to many fields, such as pharmaceuticals, organic semiconductors, pigments, food, and explosives. Controlling polymorphism of organic semiconductors (OSCs) in thin films is particularly important given that such films form the active layer in most organic electronics devices and that dramatic changes in the electronic properties can be induced even by small changes in the molecular packing. However, there are very few polymorphic OSCs for which the structure-property relationships have been elucidated so far. The major challenges lie in the transient nature of metastable forms and the preparation of phase-pure, highly crystalline thin films for resolving the crystal structures and evaluating the charge transport properties. Here we demonstrate that the nanoconfinement effect combined with the flow-enhanced crystal engineering technique is a powerful and likely material-agnostic method to identify existing polymorphs in OSC materials and to prepare the individual pure forms in thin films at ambient conditions. With this method we prepared high quality crystal polymorphs and resolved crystal structures of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), including a new polymorph discovered via in situ grazing incidence X-ray diffraction and confirmed by molecular mechanic simulations. We further correlated molecular packing with charge transport properties using quantum chemical calculations and charge carrier mobility measurements. In addition, we applied our methodology to a [1]benzothieno[3,2-b][1]1benzothiophene (BTBT) derivative and successfully stabilized its metastable form.

Graphene-on-semiconductor substrates for analog electronics

DOEpatents

Lagally, Max G.; Cavallo, Francesca; Rojas-Delgado, Richard

2016-04-26

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

Optical and Electronic Transport Properties of Luminescent Semiconductors, Amorphous Materials and Metastable Solids.

DTIC Science & Technology

1979-02-26

Williams, Electronic States of Semiconductors with Graded Periodic Inhomogeneities, Phys. Rev. Eli, 2200 (1975) . 7. P. DiBona and R. Ewing, ESR of...Fellow) - K. Daghir, Ph.D. (1974) (IBM) P. DiBona , M.S. (1967), Ph.D. (1974) (U.S. Navy, Surface Weapons Research Laboratory) D. Hoover (current

First-principles calculation of electronic energy level alignment at electrochemical interfaces

NASA Astrophysics Data System (ADS)

Azar, Yavar T.; Payami, Mahmoud

2017-08-01

Energy level alignment at solid-solvent interfaces is an important step in determining the properties of electrochemical systems. The positions of conduction and valence band edges of a semiconductor are affected by its environment. In this study, using first-principles DFT calculation, we have determined the level shifts of the semiconductors TiO2 and ZnO at the interfaces with MeCN and DMF solvent molecules. The level shifts of semiconductor are obtained using the potential difference between the clean and exposed surfaces of asymmetric slabs. In this work, neglecting the effects of present ions in the electrolyte solution, we have shown that the solvent molecules give rise to an up-shift for the levels, and the amount of this shift varies with coverage. It is also shown that the shapes of density of states do not change sensibly near the gap. Molecular dynamics simulations of the interface have shown that at room temperatures the semiconductor surface is not fully covered by the solvent molecules, and one must use intermediate values in an static calculations.

Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

PubMed Central

Fine, George F.; Cavanagh, Leon M.; Afonja, Ayo; Binions, Russell

2010-01-01

Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and quick response times. They have been used extensively to measure and monitor trace amounts of environmentally important gases such as carbon monoxide and nitrogen dioxide. In this review the nature of the gas response and how it is fundamentally linked to surface structure is explored. Synthetic routes to metal oxide semiconductor gas sensors are also discussed and related to their affect on surface structure. An overview of important contributions and recent advances are discussed for the use of metal oxide semiconductor sensors for the detection of a variety of gases—CO, NOx, NH3 and the particularly challenging case of CO2. Finally a description of recent advances in work completed at University College London is presented including the use of selective zeolites layers, new perovskite type materials and an innovative chemical vapour deposition approach to film deposition. PMID:22219672

Theoretical study of new potential semiconductor surfaces performance for dye sensitized solar cell usage: TiO2-B (001), (100) and H2Ti3O7 (100)

NASA Astrophysics Data System (ADS)

German, Estefania; Faccio, Ricardo; Mombrú, Álvaro W.

2017-12-01

Hydrogen titanate (H2Ti3O7) and TiO2-B polymorph are potential surfaces identified experimentally in the last years, which need to be analyzed. To study their performance as surfaces for dye sensitized solar cells (DSSC), a set of dye adsorption configurations were evaluated on them, as model dye the small and organic catechol molecule was used. We have calculated adsorption geometry, energy, electronic transfer from dye to semiconductor adsorbent and frontier orbitals by means of density functional theory (DFT). Results show that vacancy-like defected H2Ti3O7 (100) and TiO2-B (100) surfaces present favorable adsorption energies. Finally, an adequate energy level alignment make both surfaces prone to be adequate for direct electron transfer upon excitation, from catechol to the conduction band of the semiconductors, with bands located in the Visible region of the electromagnetic spectrum. Additionally, the band structure alignment indicates an increase in the open circuit voltage, in reference to I2/I3- redox pair potential. All these characteristics make hydrogen titanate (H2Ti3O7) and TiO2-B polymorph promising for DSSC applications.

A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S., E-mail: shailesh.sharma6@mail.dcu.ie; National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9; Gahan, D., E-mail: david.gahan@impedans.com

2014-04-15

A novel retarding field energy analyzer design capable of measuring the spatial uniformity of the ion energy and ion flux across the surface of a semiconductor wafer is presented. The design consists of 13 individual, compact-sized, analyzers, all of which are multiplexed and controlled by a single acquisition unit. The analyzers were tested to have less than 2% variability from unit to unit due to tight manufacturing tolerances. The main sensor assembly consists of a 300 mm disk to mimic a semiconductor wafer and the plasma sampling orifices of each sensor are flush with disk surface. This device is placedmore » directly on top of the rf biased electrode, at the wafer location, in an industrial capacitively coupled plasma reactor without the need for any modification to the electrode structure. The ion energy distribution, average ion energy, and average ion flux were measured at the 13 locations over the surface of the powered electrode to determine the degree of spatial nonuniformity. The ion energy and ion flux are shown to vary by approximately 20% and 5%, respectively, across the surface of the electrode for the range of conditions investigated in this study.« less

Processes for multi-layer devices utilizing layer transfer

DOEpatents

Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2015-02-03

A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

NASA Astrophysics Data System (ADS)

Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

2018-05-01

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

Surface Plasmon Enhanced Sensitive Detection for Possible Signature of Majorana Fermions via a Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

PubMed Central

Chen, Hua-Jun; Zhu, Ka-Di

2015-01-01

In the present work, we theoretically propose an optical scheme to detect the possible signature of Majorana fermions via the optical pump-probe spectroscopy, which is very different from the current tunneling measurement based on electrical methods. The scheme consists of a metal nanoparticle and a semiconductor quantum dot coupled to a hybrid semiconductor/superconductor heterostructures. The results show that the probe absorption spectrum of the quantum dot presents a distinct splitting due to the existence of Majorana fermions. Owing to surface plasmon enhanced effect, this splitting will be more obvious, which makes Majorana fermions more easy to be detectable. The technique proposed here open the door for new applications ranging from robust manipulation of Majorana fermions to quantum information processing based on Majorana fermions. PMID:26310929

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

1997-11-01

Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

Thin film heterojunction photovoltaic cells and methods of making the same

DOEpatents

Basol, Bulent M.; Tseng, Eric S.; Rod, Robert L.

1983-06-14

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

Method For Growth of Crystal Surfaces and Growth of Heteroepitaxial Single Crystal Films Thereon

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor); Larkin, David J. (Inventor); Neudeck, Philip G. (Inventor); Matus, Lawrence G. (Inventor)

2000-01-01

A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon is discussed. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).

Arrays of ultrathin silicon solar microcells

DOEpatents

Rogers, John A.; Rockett, Angus A.; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2015-08-11

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Arrays of ultrathin silicon solar microcells

DOEpatents

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Coated semiconductor devices for neutron detection

DOEpatents

Klann, Raymond T.; McGregor, Douglas S.

2002-01-01

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

STM experiment and atomistic modelling hand in hand: individual molecules on semiconductor surfaces

NASA Astrophysics Data System (ADS)

Briggs, G. A. D.; Fisher, A. J.

When the scanning tunnelling microscope was invented, the world was amazed at the atomic resolution images of surfaces which could be obtained. It soon became apparent that it was one thing to obtain an image, and quite another to understand the structure that was seen. Happily the developments in real space experimental techniques for studying surfaces have been accompanied by developments in real space theoretical techniques for modelling electronic structure and bonding at surfaces. The aim of this review is to describe how and why STM experiments and atomistic modelling should be combined and what they can then be expected to tell us. A summary is given of the experimental methods for theorists and vice versa, and their relationship is illustrated using a number of case studies where they have been used together. To give the review a coherent focus the examples are confined to studies of adsorbed molecules on semiconductor surfaces, in particular Si(001) and GaAs(001). Questions thus addressed include: How are experimental images and structural modelling linked by tunnelling theory? What can they tell us together that we could not learn from experiment or theory alone? What can we learn about atomic positions and bonding at semiconductor surfaces with and without adsorbed molecules? How many different ways are there to relate images to calculations?

Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric

NASA Astrophysics Data System (ADS)

Wang, Jianli; Chen, Xinfeng; Wu, Shuyin; Tang, Gang; Zhang, Junting; Stampfl, C.

2018-03-01

Wurtzite-perovskite heterostructures composed of a high dielectric constant oxide and a wide bandgap semiconductor envision promising applications in field-effect transistors. In the present paper, the structural and electronic properties of LaAlO3/ZnO heterojunctions are investigated by first-principles calculations. We study the initial adsorption of La, Al, and oxygen atoms on ZnO (0001) and (000 1 ¯ ) surfaces and find that La atoms may occupy interstitial sites during the growth of stoichiometric ZnO (0001). The band gap of the stoichiometric ZnO (0001) surface is smaller than that of the stoichiometric ZnO (000 1 ¯ ) surface. The surface formation energy indicates that La or Al atoms may substitute Zn atoms at the nonstoichiometric ZnO (0001) surface. The atomic charges, electronic density of states, and band offsets are analyzed for the optimized LaAlO3/ZnO heterojunctions. There is a band gap for the LaAlO3/ZnO (000 1 ¯ ) heterostructures, and the largest variation in charge occurs at the surface or interface. Our results suggest that the Al-terminated LaAlO3/ZnO (000 1 ¯ ) interfaces are suitable for the design of metal oxide semiconductor devices because the valence and conduction band offsets are both larger than 1 eV and the interface does not produce any in-gap states.

Preparation of anatase TiO2 nanoparticles using low hydrothermal temperature for dye-sensitized solar cell

NASA Astrophysics Data System (ADS)

Sofyan, N.; Ridhova, A.; Yuwono, A. H.; Udhiarto, A.

2018-03-01

One device being developed as an alternative source of renewable energy by utilizing solar energy source is dye-sensitized solar cells (DSSC). This device works using simple photosynthetic-electrochemical principle in the molecular level. In this device, the inorganic oxide semiconductor of titanium dioxide (TiO2) has a great potential for the absorption of the photon energy from the solar energy source, especially in the form of TiO2 nanoparticle structure. This nanoparticle structure is expected to improve the performance of DSSC because the surface area to weight ratio of this nanostructures is very large. In this study, the synthesis of TiO2 nanoparticle from its precursors has been performed along with the fabrication of the DSSC device. Effort to improve the size of nanocrystalline anatase TiO2 was accomplished by low hydrothermal treatment at various temperatures whereas the crystallinity of the anatase phase in the structure was performed by calcination process. Characterization of the materials was performed using X-ray Diffraction (XRD) and scanning electron microscope (SEM), while the DSSC performance was examined through a high precision current versus voltage (I-V) curve analyzer. The results showed that pure anatase TiO2 nanoparticles could be obtained at low hydrothermal of 100, 125, and 150 °C followed by calcination at 450 °C. The best performance of photocurrent-voltage characteristic was given by TiO2 hydrothermally synthesized at 150 °C with power conversion efficiency (PCE) of 4.40 %, whereas the standard TiO2 nanoparticles has PCE only 4.02 %. This result is very promising in terms low temperature and thus low cost of anatase TiO2 semiconductor preparation for DSSC application.

A weak-light-responsive TiO2/g-C3N4 composite film: photocatalytic activity under low-intensity light irradiation.

PubMed

Wang, Peifang; Guo, Xiang; Rao, Lei; Wang, Chao; Guo, Yong; Zhang, Lixin

2018-05-10

A TiO 2 /g-C 3 N 4 composite photocatalytic film was prepared by in situ synthesis method and its photocatalytic capability under weak-visible-light condition was studied. The co-precursor with different ratio of melamine and TiO 2 sol-gel precursor were treated using ultrasonic mixing, physical deposition, and co-sintering method to form the smooth, white-yellow, and compact TiO 2 /g-C 3 N 4 composite films. The prepared TiO 2 /g-C 3 N 4 materials were characterized by SEM, TEM, EDS, XRD, BET, VBXPS, and UV-vis diffuse reflectance spectra. The results of composite showed that TiO 2 and g-C 3 N 4 have close interfacial connections which are favorable to charge transfer between these two semiconductors with suitable band structure, g-C 3 N 4 retard the anatase-to-rutile phase transition of TiO 2 significantly, the specific surface area were increased with g-C 3 N 4 ratio raised. Under weak-light irradiation, composite films photocatalytic experiments exhibited RhB removal efficiency approaching 90% after three recycles. Powders suspension degradation experiments revealed the removal efficiency of TiO 2 /g-C 3 N 4 (90.8%) was higher than pure TiO 2 (52.1%) and slightly lower than pure g-C 3 N 4 (96.6%). By control experiment, the enhanced photocatalysis is ascribed to the combination of TiO 2 and g-C 3 N 4 , which not only produced thin films with greater stability but also formed heterojunctions that can be favorable to charge transfer between these two semiconductors with suitable band structure. This study presents the potential application of photocatalytic film in the wastewater treatment under weak-light situation.

Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

PubMed

Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

2015-04-08

Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

Technology modules from micro- and nano-electronics for the life sciences.

PubMed

Birkholz, M; Mai, A; Wenger, C; Meliani, C; Scholz, R

2016-05-01

The capabilities of modern semiconductor manufacturing offer remarkable possibilities to be applied in life science research as well as for its commercialization. In this review, the technology modules available in micro- and nano-electronics are exemplarily presented for the case of 250 and 130 nm technology nodes. Preparation procedures and the different transistor types as available in complementary metal-oxide-silicon devices (CMOS) and BipolarCMOS (BiCMOS) technologies are introduced as key elements of comprehensive chip architectures. Techniques for circuit design and the elements of completely integrated bioelectronics systems are outlined. The possibility for life scientists to make use of these technology modules for their research and development projects via so-called multi-project wafer services is emphasized. Various examples from diverse fields such as (1) immobilization of biomolecules and cells on semiconductor surfaces, (2) biosensors operating by different principles such as affinity viscosimetry, impedance spectroscopy, and dielectrophoresis, (3) complete systems for human body implants and monitors for bioreactors, and (4) the combination of microelectronics with microfluidics either by chip-in-polymer integration as well as Si-based microfluidics are demonstrated from joint developments with partners from biotechnology and medicine. WIREs Nanomed Nanobiotechnol 2016, 8:355-377. doi: 10.1002/wnan.1367 For further resources related to this article, please visit the WIREs website. © 2015 Wiley Periodicals, Inc.

Enhanced NO2 sensing characteristics of Au modified porous silicon/thorn-sphere-like tungsten oxide composites

NASA Astrophysics Data System (ADS)

Yuan, Lin; Hu, Ming; Wei, Yulong; Ma, Wenfeng

2016-12-01

The thorn-sphere-like tungsten oxide (WO3) made up by 1D nanorods has been successfully synthesized through hydrothermal method on the Au-modified porous silicon (PS) substrates with seed-layer induction. By using XRD, EDS, FESEM and TEM techniques, we tested and verified that the crystal structure and morphology evolution of WO3 hierarchical nanostructure on the Au-modified PS strongly depend on the Au-sputtering time and hydrothermal reaction time. In addition, by comparing the NO2-sensing properties of the prepared products, we found that the 10 s-Au decorated PS/WO3-3 h (sputtering Au for 10 s and hydrothermal reaction for 3 h) composites sensor behaving as a typical p-type semiconductor and operating at room temperature (RT) exhibits high sensitivity and response characteristics even to ppb-level NO2, which makes this kind of sensor a competitive candidate for NO2-sensing applications. Moreover, the enhanced response may not only due to the high specific surface area but the Au nanoparticles acting as promoters for the spillover effect and forming metal-semiconductor heterojunctions with the PS and WO3. The transmission of electrons and holes in the heterogeneous interface generated among PS, WO3 and Au is proposed to illustrate the p-type response mechanism.

Fabrication of Smart Chemical Sensors Based on Transition-Doped-Semiconductor Nanostructure Materials with µ-Chips

PubMed Central

Rahman, Mohammed M.; Khan, Sher Bahadar; Asiri, Abdullah M.

2014-01-01

Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm2) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r2 = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm−2mM−1 and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I–V sensors on μ-chips. PMID:24454785

Fabrication of smart chemical sensors based on transition-doped-semiconductor nanostructure materials with µ-chips.

PubMed

Rahman, Mohammed M; Khan, Sher Bahadar; Asiri, Abdullah M

2014-01-01

Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm(2)) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r(2) = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm(-2)mM(-1) and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I-V sensors on μ-chips.

Anisotropy-based crystalline oxide-on-semiconductor material

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

2000-01-01

A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

S Kim; M Jang; H Yang

2011-12-31

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1988-06-16

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, Carol I. H.; Myers, David R.; Vook, Frederick L.

1989-01-01

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

First-Principles Framework to Compute Sum-Frequency Generation Vibrational Spectra of Semiconductors and Insulators.

PubMed

Wan, Quan; Galli, Giulia

2015-12-11

We present a first-principles framework to compute sum-frequency generation (SFG) vibrational spectra of semiconductors and insulators. The method is based on density functional theory and the use of maximally localized Wannier functions to compute the response to electric fields, and it includes the effect of electric field gradients at surfaces. In addition, it includes quadrupole contributions to SFG spectra, thus enabling the verification of the dipole approximation, whose validity determines the surface specificity of SFG spectroscopy. We compute the SFG spectra of ice I_{h} basal surfaces and identify which spectra components are affected by bulk contributions. Our results are in good agreement with experiments at low temperature.

Photomechanical vibration of thin crystals of polar semiconductors

NASA Technical Reports Server (NTRS)

Lagowski, J.; Gatos, H. C.

1974-01-01

It was found that thin crystals of polar (non-centrosymmetric) semiconductors constitute a new type of photosensitive system in which incident illumination is converted into mechanical energy: thus, illumination-induced elastic deformation (bending) was observed on thin (00.1) CdS and (111) GaAs crystals; furthermore, by employing chopped light the crystals were excited to their resonant vibration (photomechanical vibration); the dependence of the amplitude of this vibration on the energy of the incident radiation was found to be similar to the dependence of the surface photovoltage on the energy of the incident radiation (surface photovoltage spectrum). The present findings are consistent with a model based on light-induced modulation of the piezoelectric surface stresses.

Optimization of the parameters of ITO-CdTe photovoltaic cells

NASA Astrophysics Data System (ADS)

Adib, N.; Simashkevich, A. V.; Sherban, D. A.

The effect of the surface state density at the interface and of the static charge in the intermediate oxide layer on the photoelectric parameters of solar cells based on ITO-nCdTe semiconductor-insulator-semiconductor structures is calculated theoretically. It is shown that,under AMI conditions, the conversion efficiency of such cells can be as high as 12 percent (short-circuit current, 23 mA/sq cm; open-circuit voltage, 0.65 V; fill factor, 0.8), provided that the surface states are acceptors and the oxide is negatively charged. It is concluded that surface states and the dielectric layer charge have a positive effect on the efficiency of solar cells of this type.

Semiconductor Nanorod–Carbon Nanotube Biomimetic Films for Wire-Free Photostimulation of Blind Retinas

PubMed Central

2014-01-01

We report the development of a semiconductor nanorod-carbon nanotube based platform for wire-free, light induced retina stimulation. A plasma polymerized acrylic acid midlayer was used to achieve covalent conjugation of semiconductor nanorods directly onto neuro-adhesive, three-dimensional carbon nanotube surfaces. Photocurrent, photovoltage, and fluorescence lifetime measurements validate efficient charge transfer between the nanorods and the carbon nanotube films. Successful stimulation of a light-insensitive chick retina suggests the potential use of this novel platform in future artificial retina applications. PMID:25350365

Interpretation of quantum yields exceeding unity in photoelectrochemical systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szklarczyk, M.; Allen, R.E.

1986-10-20

In photoelectrochemical systems involving light shining on a semiconductor interfaced with an electrolyte, the quantum yield as a function of photon frequency ..nu.. is observed to exhibit a peak at h..nu..roughly-equal2E/sub g/, where E/sub g/ is the band gap of the semiconductor. The maximum in this peak is sometimes found to exceed unity. We provide an interpretation involving surface states and inelastic electron-electron scattering. The theory indicates that the effect should be observable for p-type semiconductors, but not n-type.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Progress in nanostructured photoanodes for dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Liu, Xueyang; Fang, Jian; Liu, Yong; Lin, Tong

2016-09-01

Solar cells represent a principal energy technology to convert light into electricity. Commercial solar cells are at present predominately produced by single- or multi-crystalline silicon wafers. The main drawback to silicon-based solar cells, however, is high material and manufacturing costs. Dye-sensitized solar cells (DSSCs) have attracted much attention during recent years because of the low production cost and other advantages. The photoanode (working electrode) plays a key role in determining the performance of DSSCs. In particular, nanostructured photoanodes with a large surface area, high electron transfer efficiency, and low electron recombination facilitate to prepare DSSCs with high energy conversion efficiency. In this review article, we summarize recent progress in the development of novel photoanodes for DSSCs. Effect of semiconductor material (e.g. TiO2, ZnO, SnO2, N2O5, and nano carbon), preparation, morphology and structure (e.g. nanoparticles, nanorods, nanofibers, nanotubes, fiber/particle composites, and hierarchical structure) on photovoltaic performance of DSSCs is described. The possibility of replacing silicon-based solar cells with DSSCs is discussed.

Ascorbic-acid-assisted growth of high quality M@ZnO: a growth mechanism and kinetics study.

PubMed

Yang, Yun; Han, Shuhua; Zhou, Guangju; Zhang, Lijie; Li, Xingliang; Zou, Chao; Huang, Shaoming

2013-12-07

We present a general route for synthesizing M@ZnO nanoparticles (NPs) by using ascorbic acid (AA) to induce deposition of ZnO on various shaped and structured cationic-surfactant-capped NP surfaces (noble, magnetic, semiconductor, rod-like, spherical, cubic, dendrite, alloy, core@shell). The results show that the complexing (AA and Zn(2+)) and cooperative effects (AA and CTAB) play important roles in the formation of polycrystalline ZnO shells. Besides, the growth kinetics of M@ZnO was systematically studied. It was found that the slow growth rate favors the successful formation of uniform core@ZnO NPs with relatively loose shells. An appropriate growth rate allows achieving high quality M@ZnO NPs with dense shells. However, very fast growth causes significant additional nucleation and the formation of pure ZnO NPs. This general method is suitable for preparing M@ZnO using seed NPs prepared in both water and organic phases. It might be an alternative route for functionalizing NPs for bioapplications (ZnO is biocompatible), modulating material properties as designed, or synthesizing template materials for building other nanostructures.

Distributed feedback acoustic surface wave oscillator

NASA Technical Reports Server (NTRS)

Elachi, C. (Inventor)

1977-01-01

An acoustic surface wave oscillator is constructed from a semiconductor piezoelectric acoustic surface wave amplifier by providing appropriate perturbations at the piezoelectric boundary. The perturbations cause Bragg order reflections that maintain acoustic wave oscillation under certain conditions of gain and feedback.

Synthesis of visible-light responsive graphene oxide/TiO(2) composites with p/n heterojunction.

PubMed

Chen, Chao; Cai, Weimin; Long, Mingce; Zhou, Baoxue; Wu, Yahui; Wu, Deyong; Feng, Yujie

2010-11-23

Graphene oxide/TiO(2) composites were prepared by using TiCl(3) and graphene oxide as reactants. The concentration of graphene oxide in starting solution played an important role in photoelectronic and photocatalytic performance of graphene oxide/TiO(2) composites. Either a p-type or n-type semiconductor was formed by graphene oxide in graphene oxide/TiO(2) composites. These semiconductors could be excited by visible light with wavelengths longer than 510 nm and acted as sensitizer in graphene oxide/TiO(2) composites. Visible-light driven photocatalytic performance of graphene oxide/TiO(2) composites in degradation of methyl orange was also studied. Crystalline quality and chemical states of carbon elements from graphene oxide in graphene oxide/TiO(2) composites depended on the concentration of graphene oxide in the starting solution. This study shows a possible way to fabricate graphene oxide/semiconductor composites with different properties by using a tunable semiconductor conductivity type of graphene oxide.

Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

NASA Astrophysics Data System (ADS)

Turkdogan, Sunay; Kilic, Bayram

2018-01-01

We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

Assembly of mesoscale helices with near-unity enantiomeric excess and light-matter interactions for chiral semiconductors.

PubMed

Feng, Wenchun; Kim, Ji-Young; Wang, Xinzhi; Calcaterra, Heather A; Qu, Zhibei; Meshi, Louisa; Kotov, Nicholas A

2017-03-01

Semiconductors with chiral geometries at the nanoscale and mesoscale provide a rich materials platform for polarization optics, photocatalysis, and biomimetics. Unlike metallic and organic optical materials, the relationship between the geometry of chiral semiconductors and their chiroptical properties remains, however, vague. Homochiral ensembles of semiconductor helices with defined geometries open the road to understanding complex relationships between geometrical parameters and chiroptical properties of semiconductor materials. We show that semiconductor helices can be prepared with an absolute yield of ca 0.1% and an enantiomeric excess (e.e.) of 98% or above from cysteine-stabilized cadmium telluride nanoparticles (CdTe NPs) dispersed in methanol. This high e.e. for a spontaneously occurring chemical process is attributed to chiral self-sorting based on the thermodynamic preference of NPs to assemble with those of the same handedness. The dispersions of homochiral self-assembled helices display broadband visible and near-infrared (Vis-NIR) polarization rotation with anisotropy ( g ) factors approaching 0.01. Calculated circular dichroism (CD) spectra accurately reproduced experimental CD spectra and gave experimentally validated spectral predictions for different geometrical parameters enabling de novo design of chiroptical semiconductor materials. Unlike metallic, ceramic, and polymeric helices that serve predominantly as scatterers, chiroptical properties of semiconductor helices have nearly equal contribution of light absorption and scattering, which is essential for device-oriented, field-driven light modulation. Deconstruction of a helix into a series of nanorods provides a simple model for the light-matter interaction and chiroptical activity of helices. This study creates a framework for further development of polarization-based optics toward biomedical applications, telecommunications, and hyperspectral imaging.

Reverse Non-Equilibrium Molecular Dynamics Demonstrate That Surface Passivation Controls Thermal Transport at Semiconductor-Solvent Interfaces.

PubMed

Hannah, Daniel C; Gezelter, J Daniel; Schaller, Richard D; Schatz, George C

2015-06-23

We examine the role played by surface structure and passivation in thermal transport at semiconductor/organic interfaces. Such interfaces dominate thermal transport in semiconductor nanomaterials owing to material dimensions much smaller than the bulk phonon mean free path. Utilizing reverse nonequilibrium molecular dynamics simulations, we calculate the interfacial thermal conductance (G) between a hexane solvent and chemically passivated wurtzite CdSe surfaces. In particular, we examine the dependence of G on the CdSe slab thickness, the particular exposed crystal facet, and the extent of surface passivation. Our results indicate a nonmonotonic dependence of G on ligand-grafting density, with interfaces generally exhibiting higher thermal conductance for increasing surface coverage up to ∼0.08 ligands/Å(2) (75-100% of a monolayer, depending on the particular exposed facet) and decreasing for still higher coverages. By analyzing orientational ordering and solvent penetration into the ligand layer, we show that a balance of competing effects is responsible for this nonmonotonic dependence. Although the various unpassivated CdSe surfaces exhibit similar G values, the crystal structure of an exposed facet nevertheless plays an important role in determining the interfacial thermal conductance of passivated surfaces, as the density of binding sites on a surface determines the ligand-grafting densities that may ultimately be achieved. We demonstrate that surface passivation can increase G relative to a bare surface by roughly 1 order of magnitude and that, for a given extent of passivation, thermal conductance can vary by up to a factor of ∼2 between different surfaces, suggesting that appropriately tailored nanostructures may direct heat flow in an anisotropic fashion for interface-limited thermal transport.

CMOS/SOS processing

NASA Technical Reports Server (NTRS)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

Ordered porous mesostructured materials from nanoparticle-block copolymer self-assembly

DOEpatents

Warren, Scott; Wiesner, Ulrich; DiSalvo, Jr., Francis J

2013-10-29

The invention provides mesostructured materials and methods of preparing mesostructured materials including metal-rich mesostructured nanoparticle-block copolymer hybrids, porous metal-nonmetal nanocomposite mesostructures, and ordered metal mesostructures with uniform pores. The nanoparticles can be metal, metal alloy, metal mixture, intermetallic, metal-carbon, metal-ceramic, semiconductor-carbon, semiconductor-ceramic, insulator-carbon or insulator-ceramic nanoparticles, or combinations thereof. A block copolymer/ligand-stabilized nanoparticle solution is cast, resulting in the formation of a metal-rich (or semiconductor-rich or insulator-rich) mesostructured nanoparticle-block copolymer hybrid. The hybrid is heated to an elevated temperature, resulting in the formation of an ordered porous nanocomposite mesostructure. A nonmetal component (e.g., carbon or ceramic) is then removed to produce an ordered mesostructure with ordered and large uniform pores.

High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline

NASA Astrophysics Data System (ADS)

Huang, Changbao; Wu, Haixin; Xiao, Ruichun; Chen, Shijing; Ma, Jiaren

2018-06-01

The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinear-optical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the high-pressure-resisted method can be used to rapidly synthesize other pnictide and chalcogenide semiconductors and control the components ratio.

Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

PubMed Central

2011-01-01

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

NASA Technical Reports Server (NTRS)

Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.;

Band-engineering of TiO2 as a wide-band gap semiconductor using organic chromophore dyes

NASA Astrophysics Data System (ADS)

Wahyuningsih, S.; Kartini, I.; Ramelan, A. H.; Saputri, L. N. M. Z.; Munawaroh, H.

2017-07-01

Bond-engineering as applied to semiconductor materials refers to the manipulation of the energy bands in order to control charge transfer processes in a device. When the device in question is a photoelectrochemical cell, the charges affected by drift become the focus of the study. The ideal band gap of semiconductors for enhancement of photocatalyst activity can be lowered to match with visible light absorption and the location of conduction Band (CB) should be raised to meet the reducing capacity. Otherwise, by the addition of the chromofor organic dyes, the wide-band gab can be influences by interacation resulting between TiO2 surface and the dyes. We have done the impruvisation wide-band gap of TiO2 by the addition of organic chromophore dye, and the addition of transition metal dopand. The TiO2 morphology influence the light absorption as well as the surface modification. The organic chromophore dye was syntesized by formation complexes compound of Co(PAR)(SiPA)(PAR)= 4-(2-piridylazoresorcinol), SiPA = Silyl propil amine). The result showed that the chromophore groups adsorbed onto TiO2 surface can increase the visible light absorption of wide-band gab semiconductor. Initial absorption of a chromophore will affect light penetration into the material surfaces. The use of photonic material as a solar cell shows this phenomenon clearly from the IPCE (incident photon to current conversion efficiency) measurement data. Organic chromophore dyes of Co(PAR)(SiPA) exhibited the long wavelength absorption character compared to the N719 dye (from Dyesol).

Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

PubMed

Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

2015-09-15

Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

Microscopic properties of ionic liquid/organic semiconductor interfaces revealed by molecular dynamics simulations.

PubMed

Yokota, Yasuyuki; Miyamoto, Hiroo; Imanishi, Akihito; Takeya, Jun; Inagaki, Kouji; Morikawa, Yoshitada; Fukui, Ken-Ichi

2018-05-09

Electric double-layer transistors based on ionic liquid/organic semiconductor interfaces have been extensively studied during the past decade because of their high carrier densities at low operation voltages. Microscopic structures and the dynamics of ionic liquids likely determine the device performance; however, knowledge of these is limited by a lack of appropriate experimental tools. In this study, we investigated ionic liquid/organic semiconductor interfaces using molecular dynamics to reveal the microscopic properties of ionic liquids. The organic semiconductors include pentacene, rubrene, fullerene, and 7,7,8,8-tetracyanoquinodimethane (TCNQ). While ionic liquids close to the substrate always form the specific layered structures, the surface properties of organic semiconductors drastically alter the ionic dynamics. Ionic liquids at the fullerene interface behave as a two-dimensional ionic crystal because of the energy gain derived from the favorable electrostatic interaction on the corrugated periodic substrate.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

1994-01-01

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yafyasov, A. M., E-mail: yafyasov@gmail.com; Bogevolnov, V. B.; Ryumtsev, E. I.

A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N{sub ss}) at the interface. A system with N{sub ss} ≈ 5 × 10{sup 10} cm{sup –2} is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbedmore » layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.« less

Three-dimensional charge coupled device

DOEpatents

Conder, Alan D.; Young, Bruce K. F.

1999-01-01

A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface of the semiconductor substrate. The 3D-CCD is capable of developing a strong E-field throughout the depth of the semiconductor by using deep (buried) parallel (bulk) electrodes in the substrate material. Using backside illumination, the 3D-CCD architecture enables a single device to image photon energies from the visible, to the ultra-violet and soft x-ray, and out to higher energy x-rays of 30 keV and beyond. The buried or bulk electrodes are electrically connected to the surface electrodes, and an E-field parallel to the surface is established with the pixel in which the bulk electrodes are located. This E-field attracts charge to the bulk electrodes independent of depth and confines it within the pixel in which it is generated. Charge diffusion is greatly reduced because the E-field is strong due to the proximity of the bulk electrodes.

Process for fabricating a charge coupled device

DOEpatents

Conder, Alan D.; Young, Bruce K. F.

2002-01-01

A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface of the semiconductor substrate. The 3D-CCD is capable of developing a strong E-field throughout the depth of the semiconductor by using deep (buried) parallel (bulk) electrodes in the substrate material. Using backside illumination, the 3D-CCD architecture enables a single device to image photon energies from the visible, to the ultra-violet and soft x-ray, and out to higher energy x-rays of 30 keV and beyond. The buried or bulk electrodes are electrically connected to the surface electrodes, and an E-field parallel to the surface is established with the pixel in which the bulk electrodes are located. This E-field attracts charge to the bulk electrodes independent of depth and confines it within the pixel in which it is generated. Charge diffusion is greatly reduced because the E-field is strong due to the proximity of the bulk electrodes.

Partially confined configuration for the growth of semiconductor crystals from the melt in zero-gravity environment

NASA Technical Reports Server (NTRS)

Lagowski, J.; Gatos, H. C.; Dabkowski, F. P.

1985-01-01

A novel partially confined configuration is proposed for the crystal growth of semiconductors from the melt, including those with volatile constituents. A triangular prism is employed to contain the growth melt. Due to surface tension, the melt will acquire a cylindrical-like shape and thus contact the prism along three parallel lines. The three empty spaces between the cylindrical melt and the edges of the prism will accommodate the expansion of the solidifying semiconductor, and in the case of semiconductor compounds with a volatile constituent, will permit the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry. Theoretical and experimental evidence in support of this new type of confinement is presented.

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.

PubMed

Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

2016-05-28

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

PubMed Central

Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

2016-01-01

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared. PMID:27285177

Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

NASA Astrophysics Data System (ADS)

Zhang, Runchun; Zhao, Beiji; Huang, Kai; You, Tiangui; Jia, Qi; Lin, Jiajie; Zhang, Shibin; Yan, Youquan; Yi, Ailun; Zhou, Min; Ou, Xin

2018-05-01

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Humidity sensitive polymers In solution processed adjustable pore-volume Cu(In,Ga)S2 photocathodes for solar hydrogen production

NASA Astrophysics Data System (ADS)

Zhang, Chuan; Luo, Wenjun; Wen, Xin; Guan, Zhongjie; Zou, Zhigang

2017-11-01

P-type Cu(In,Ga)S2 semiconductors are promising candidates to be used as photocathodes for solar water splitting. Porous structures have been widely used to improve the performances of photoelectrodes due to good minority carrier transport. However, a porous photoelectrode has longer transport distance of majority carriers, which limits its performance. Controlling pore volume of a photoelectrode can balance minority and majority carrier transport and improve the performance. Here, a porous Cu(In,Ga)S2 film is prepared by facile spin-coating method. The pore volume of Cu(In,Ga)S2 film is controlled by adjusting relative humidity (RH) of air during spin-coating process. Further studies suggest that polyvinyl acetate (PVAc) in precursor solution is a humidity sensitive polymer and plays a key role to form different pore volume. The 40% RH sample has the best performance due to its optimum pore volume. After further coated with CdS surface passivation layer and Pt electrocatalyst on the surface, a 40% RH Cu(In,Ga)S2 photocathode indicates a photocurrent density of 8.6 mA cm-2 at 0 V RHE, which is one of the highest photocurrents of Cu(In,Ga)S2 photocathodes. This new strategy for adjusting pore volume is also suitable to prepare other solution-processed inorganic materials.

Significant Enhancement of Photocatalytic Reduction of CO2 with H2O over ZnO by the Formation of Basic Zinc Carbonate.

PubMed

Xin, Chunyu; Hu, Maocong; Wang, Kang; Wang, Xitao

2017-07-11

Electron-hole pair separation efficiency and adsorption performance of photocatalysts to CO 2 are the two key factors affecting the performance of photocatalytic CO 2 reduction with H 2 O. Distinct from conventional promoter addition, this study proposed a novel approach to address these two issues by tuning the own surface features of semiconductor photocatalyst. Three ZnO samples with different morphologies, surface area, and defect content were fabricated by varying preparation methods, characterized by XRD, TEM, and room-temperature PL spectra, and tested in photoreduction of CO 2 with H 2 O. The results show that the as-prepared porous ZnO nanosheets exhibit a much higher activity for photoreduction of CO 2 with H 2 O when compared to ZnO nanoparticles and nanorods attributed to the existence of more defect sites, that is, zinc and oxygen vacancies. These defects would lower the combination rate of electron-hole pair as well as promote the formation of basic zinc carbonate by Lewis acid-base interaction, which is the active intermediate species for photoreduction of CO 2 . ZnO nanoparticles and ZnO nanorods with few defects show weak adsorption for CO 2 leading to the inferior photocatalytic activities. This work provides new insight on the CO 2 activation under light irradiation.

Nanostructured TiO2 and ZnO prepared by using pressurized hot water and their eco-toxicological evaluation

NASA Astrophysics Data System (ADS)

Troppová, Ivana; Matějová, Lenka; Sezimová, Hana; Matěj, Zdeněk; Peikertová, Pavlína; Lang, Jaroslav

2017-06-01

The eco-toxicological effects of unconventionally prepared nanostructured TiO2 and ZnO were evaluated in this study, since both oxides are keenly investigated semiconductor photocatalysts in the last three decades. Unconventional processing by pressurized hot water was applied in order to crystallize oxide materials as an alternative to standard calcination. Acute biological toxicity of the synthesized oxides was evaluated using germination of Sinapis alba seed (ISO 11269-1) and growth of Lemna minor fronds (ISO 20079) and was compared to commercially available TiO2 Degussa P25. Toxicity results revealed that synthesized ZnO as well as TiO2 is toxic contrary to commercial TiO2 Degussa P25 which showled stimulation effect to L. minor and no toxicity to S. alba. ZnO was significantly more toxic than TiO2. The effect of crystallite size was considered, and it was revealed that small crystallite size and large surface area are not the toxicity-determining factors. Factors such as the rate of nanosized crystallites aggregation and concentration, shape and surface properties of TiO2 nanoparticles affect TiO2 toxicity to both plant species. Seriously, the dissolution of Ti4+ ions from TiO2 was also observed which may contribute to its toxicity. In case of ZnO, the dissolution of Zn2+ ions stays the main cause of its toxicity.

Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface

NASA Astrophysics Data System (ADS)

Olszowska, Natalia; Lis, Jakub; Ciochon, Piotr; Walczak, Łukasz; Michel, Enrique G.; Kolodziej, Jacek J.

2016-09-01

Two-dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a one-dimensional (1D) self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. Electronic properties of these surfaces are tuned by changing the S coverage, while keeping a high-quality interface, free of defects and with a constant doping density. In contrast to earlier studies we show that the Poisson-Schrödinger scheme predicts the 2DEG band energies correctly but it is indispensable to take into account the existence of the physical surface. The surface substantially influences the band energies beyond simple electrostatics, by setting nontrivial boundary conditions for 2DEG wave functions.

Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes

PubMed Central

Toma, Francesca M.; Cooper, Jason K.; Kunzelmann, Viktoria; McDowell, Matthew T.; Yu, Jie; Larson, David M.; Borys, Nicholas J.; Abelyan, Christine; Beeman, Jeffrey W.; Yu, Kin Man; Yang, Jinhui; Chen, Le; Shaner, Matthew R.; Spurgeon, Joshua; Houle, Frances A.; Persson, Kristin A.; Sharp, Ian D.

2016-01-01

Artificial photosynthesis relies on the availability of semiconductors that are chemically stable and can efficiently capture solar energy. Although metal oxide semiconductors have been investigated for their promise to resist oxidative attack, materials in this class can suffer from chemical and photochemical instability. Here we present a methodology for evaluating corrosion mechanisms and apply it to bismuth vanadate, a state-of-the-art photoanode. Analysis of changing morphology and composition under solar water splitting conditions reveals chemical instabilities that are not predicted from thermodynamic considerations of stable solid oxide phases, as represented by the Pourbaix diagram for the system. Computational modelling indicates that photoexcited charge carriers accumulated at the surface destabilize the lattice, and that self-passivation by formation of a chemically stable surface phase is kinetically hindered. Although chemical stability of metal oxides cannot be assumed, insight into corrosion mechanisms aids development of protection strategies and discovery of semiconductors with improved stability. PMID:27377305