Sample records for semiconductors

  1. Diode and method of making the same

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert

    2018-03-13

    A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

  2. Method of producing strained-layer semiconductor devices via subsurface-patterning

    DOEpatents

    Dodson, Brian W.

    1993-01-01

    A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

  3. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical... October 1, 2009, applicable to workers of Freescale Semiconductor, Inc., Technical Information Center..., Massachusetts location of Freescale Semiconductor, Inc., Technical Information Center. The intent of the...

  4. Optically switched graphene/4H-SiC junction bipolar transistor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.

    A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on amore » first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.« less

  5. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    DOEpatents

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  6. Electric field induced spin-polarized current

    DOEpatents

    Murakami, Shuichi; Nagaosa, Naoto; Zhang, Shoucheng

    2006-05-02

    A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

  7. High resolution energy-sensitive digital X-ray

    DOEpatents

    Nygren, David R.

    1995-01-01

    An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays From the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detect or such that each one of the of semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into the semiconductor strip detector at the time of the interaction.

  8. High resolution energy-sensitive digital X-ray

    DOEpatents

    Nygren, D.R.

    1995-07-18

    An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays from the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detector such that each one of the semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into the semiconductor strip detector at the time of the interaction. 5 figs.

  9. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon [Pinole, CA; Bruchez, Jr., Marcel; Alivisatos, Paul [Oakland, CA

    2008-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  10. Semiconductor structure and recess formation etch technique

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching processmore » stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.« less

  11. Method of making photovoltaic cell

    DOEpatents

    Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

    2017-06-20

    A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

  12. Optical orientation in ferromagnet/semiconductor hybrids

    NASA Astrophysics Data System (ADS)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  13. Fabrication of Metallic Hollow Nanoparticles

    NASA Technical Reports Server (NTRS)

    Lillehei, Peter T. (Inventor); Chu, Sang-Hyon (Inventor); Park, Yeonjoon (Inventor); Kim, Jae-Woo (Inventor); Choi, Sr., Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2016-01-01

    Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH.sub.4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

  14. Method of physical vapor deposition of metal oxides on semiconductors

    DOEpatents

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  15. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  16. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  17. Method for removing semiconductor layers from salt substrates

    DOEpatents

    Shuskus, Alexander J.; Cowher, Melvyn E.

    1985-08-27

    A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

  18. Photovoltaic cell with nano-patterned substrate

    DOEpatents

    Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

    2016-10-18

    A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

  19. Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

    DOEpatents

    Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

    2015-05-12

    A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

  20. Reducing leakage current in semiconductor devices

    DOEpatents

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  1. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  2. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  3. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    DOEpatents

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  4. Stable surface passivation process for compound semiconductors

    DOEpatents

    Ashby, Carol I. H.

    2001-01-01

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  5. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  6. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  7. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  8. Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors

    PubMed Central

    Jin Lee, Su; Kim, Yong-Jae; Young Yeo, So; Lee, Eunji; Sun Lim, Ho; Kim, Min; Song, Yong-Won; Cho, Jinhan; Ah Lim, Jung

    2015-01-01

    Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step. PMID:26359068

  9. Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

    PubMed

    Lee, Su Jin; Kim, Yong-Jae; Yeo, So Young; Lee, Eunji; Lim, Ho Sun; Kim, Min; Song, Yong-Won; Cho, Jinhan; Lim, Jung Ah

    2015-09-11

    Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

  10. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  11. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  12. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  13. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

    NASA Astrophysics Data System (ADS)

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-12-01

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

  14. Contact Us

    Science.gov Websites

    SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing (ERC ) ** Bringing Sustainability to Semiconductor Manufacturing ** A multi-university research center leading the way to environmentally friendly semiconductor manufacturing, sponsored by the Semiconductor Research

  15. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  16. Method of making silicon on insalator material using oxygen implantation

    DOEpatents

    Hite, Larry R.; Houston, Ted; Matloubian, Mishel

    1989-01-01

    The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

  17. Controlling the stoichiometry and doping of semiconductor materials

    DOEpatents

    Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

    2016-08-16

    Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

  18. ERC Membership/Boards

    Science.gov Websites

    SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing (ERC ) ** Bringing Sustainability to Semiconductor Manufacturing ** A multi-university research center leading the way to environmentally friendly semiconductor manufacturing, sponsored by the Semiconductor Research

  19. Bi-Se doped with Cu, p-type semiconductor

    DOEpatents

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  20. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2006-09-05

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  1. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon [Pinole, CA; Bruchez, Jr., Marcel; Alivisatos, Paul [Oakland, CA

    2004-03-02

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  2. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  3. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2002-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  4. Back-side readout semiconductor photomultiplier

    DOEpatents

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  5. Bulk semiconducting scintillator device for radiation detection

    DOEpatents

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

  6. Sintered silver joints via controlled topography of electronic packaging subcomponents

    DOEpatents

    Wereszczak, Andrew A.

    2014-09-02

    Disclosed are sintered silver bonded electronic package subcomponents and methods for making the same. Embodiments of the sintered silver bonded EPSs include topography modification of one or more metal surfaces of semiconductor devices bonded together by the sintered silver joint. The sintered silver bonded EPSs include a first semiconductor device having a first metal surface, the first metal surface having a modified topography that has been chemically etched, grit blasted, uniaxial ground and/or grid sliced connected to a second semiconductor device which may also include a first metal surface with a modified topography, a silver plating layer on the first metal surface of the first semiconductor device and a silver plating layer on the first metal surface of the second semiconductor device and a sintered silver joint between the silver plating layers of the first and second semiconductor devices which bonds the first semiconductor device to the second semiconductor device.

  7. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2014-01-28

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  8. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul A.

    2016-12-27

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with onemore » or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.« less

  9. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, A.J.

    1985-02-19

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  10. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  11. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass.

    PubMed

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-12-08

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co 28.6 Fe 12.4 Ta 4.3 B 8.7 O 46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm 2  V -1  s -1 . Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

  12. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

    PubMed Central

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-an; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-01-01

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities. PMID:27929059

  13. Where the chips fall: environmental health in the semiconductor industry.

    PubMed

    Chepesiuk, R

    1999-09-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

  14. Where the chips fall: environmental health in the semiconductor industry.

    PubMed Central

    Chepesiuk, R

    1999-01-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

  15. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  16. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  17. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  18. Solid state radiative heat pump

    DOEpatents

    Berdahl, P.H.

    1984-09-28

    A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

  19. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  20. 78 FR 21344 - Grant of Authority for Subzone Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-10

    ... Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock, Michigan Pursuant to its authority... polysilicon manufacturing facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan (FTZ... manufacturing of polysilicon at the facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan...

  1. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    NASA Astrophysics Data System (ADS)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  2. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  3. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  4. Electrochemical characterization of bilayer lipid membrane-semiconductor junctions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhao, Xiao Kang; Baral, S.; Fendler, J.H.

    Three different systems of glyceryl monooleate (GMO), bilayer lipid membrane (BLM) supported semiconductor particles have been prepared and characterized. A single composition of particulate semiconductor deposited only on one side of the BLM constituted system A, two different compositions of particulate semiconductors sequentially deposited on the same side of the BLM represented system B, and two different compositions of particulate semiconductors deposited on the opposite sides of the BLM made up system C.

  5. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 7 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

  6. Semiconductors: A 21st Century Social Studies Topic.

    ERIC Educational Resources Information Center

    Sunal, Cynthia

    2000-01-01

    Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

  7. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

  8. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  9. Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua (Inventor)

    2013-01-01

    The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

  10. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    PubMed

    Bennett, Herbert S

    2007-01-01

    We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry's powerful impact in the world's macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry.

  11. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

  12. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

  13. 78 FR 40427 - Foreign-Trade Zone (FTZ) 183-Austin, Texas; Notification of Proposed Production Activity; Samsung...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-05

    ..., Texas; Notification of Proposed Production Activity; Samsung Austin Semiconductor, LLC (Semiconductors); Austin, Texas Samsung Austin Semiconductor, LLC (Samsung), operator of Subzone 183B, submitted a... June 26, 2013. Samsung currently has authority to produce semiconductor memory devices for export...

  14. 40 CFR 63.7182 - What parts of my facility does this subpart cover?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... CATEGORIES (CONTINUED) National Emission Standards for Hazardous Air Pollutants for Semiconductor... manufactures semiconductors. (b) An affected source subject to this subpart is the collection of all semiconductor manufacturing process units used to manufacture p-type and n-type semiconductors and active solid...

  15. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

  16. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

  17. Thermoelectric generator and method for the fabrication thereof

    DOEpatents

    Benson, David K.; Tracy, C. Edwin

    1987-01-01

    A thermoelectric generator using semiconductor elements for responding to a temperature gradient to produce electrical energy with all of the semiconductor elements being of the same type is disclosed. A continuous process for forming substrates on which the semiconductor elements and superstrates are deposited and a process for forming the semiconductor elements on the substrates are also disclosed. The substrates with the semiconductor elements thereon are combined with superstrates to form modules for use thermoelectric generators.

  18. Thermoelectric generator and method for the fabrication thereof

    DOEpatents

    Benson, D.K.; Tracy, C.E.

    1984-08-01

    A thermoelectric generator using semiconductor elements for responding to a temperature gradient to produce electrical energy with all of the semiconductor elements being of the same type is disclosed. A continuous process for forming substrates on which the semiconductor elements and superstrates are deposited and a process for forming the semiconductor elements on the substrates are also disclosed. The substrates with the semiconductor elements thereon are combined with superstrates to form modules for use as thermoelectric generators.

  19. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

    DOEpatents

    Sopori, Bhushan

    2014-05-27

    Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

  20. 78 FR 68814 - Subzone 183B; Authorization of Production Activity; Samsung Austin Semiconductor, LLC...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-15

    ... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [B-70-2013] Subzone 183B; Authorization of Production Activity; Samsung Austin Semiconductor, LLC (Semiconductors); Austin, Texas On June 26, 2013, Samsung Austin Semiconductor, LLC submitted a notification of proposed export production activity to the...

  1. 40 CFR 63.7195 - What definitions apply to this subpart?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... units used to manufacture p-type and n-type semiconductors or active solid state devices from a wafer.... Examples of semiconductor or related solid state devices include semiconductor diodes, semiconductor stacks... permanently attached to motor vehicles such as trucks, railcars, barges, or ships; (2) Flow-through tanks...

  2. 40 CFR 63.7195 - What definitions apply to this subpart?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... units used to manufacture p-type and n-type semiconductors or active solid state devices from a wafer.... Examples of semiconductor or related solid state devices include semiconductor diodes, semiconductor stacks... permanently attached to motor vehicles such as trucks, railcars, barges, or ships; (2) Flow-through tanks...

  3. 40 CFR 63.7195 - What definitions apply to this subpart?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... units used to manufacture p-type and n-type semiconductors or active solid state devices from a wafer.... Examples of semiconductor or related solid state devices include semiconductor diodes, semiconductor stacks... permanently attached to motor vehicles such as trucks, railcars, barges, or ships; (2) Flow-through tanks...

  4. Electrodes for Semiconductor Gas Sensors

    PubMed Central

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  5. Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2011-01-01

    Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.

  6. Method for manufacturing electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1988-11-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  7. Electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  8. Lattice matched semiconductor growth on crystalline metallic substrates

    DOEpatents

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  9. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    PubMed Central

    Bennett, Herbert S.

    2007-01-01

    We discuss the ability of the nation’s measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry’s powerful impact in the world’s macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry. PMID:27110452

  10. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    DOE PAGES

    Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; ...

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr xTi 1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x.more » We present structural and electrical characterization of SrZr xTi 1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  11. Light emitting diode with porous SiC substrate and method for fabricating

    DOEpatents

    Li, Ting; Ibbetson, James; Keller, Bernd

    2005-12-06

    A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

  12. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

    PubMed

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  13. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

    NASA Astrophysics Data System (ADS)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  14. Organic photosensitive cells grown on rough electrode with nano-scale morphology control

    DOEpatents

    Yang, Fan [Piscataway, NJ; Forrest, Stephen R [Ann Arbor, MI

    2011-06-07

    An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

  15. Photovoltaic healing of non-uniformities in semiconductor devices

    DOEpatents

    Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

    2006-08-29

    A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

  16. Semiconductor films on flexible iridium substrates

    DOEpatents

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  17. Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

    1998-01-01

    Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

  18. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    NASA Astrophysics Data System (ADS)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  19. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  20. Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

    PubMed

    Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

    2017-01-25

    We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

  1. Solid state radiative heat pump

    DOEpatents

    Berdahl, Paul H.

    1986-01-01

    A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.

  2. FOREWORD: Focus on Superconductivity in Semiconductors Focus on Superconductivity in Semiconductors

    NASA Astrophysics Data System (ADS)

    Takano, Yoshihiko

    2008-12-01

    Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm-3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors. This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1). The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In2O3 (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high-TC superconductors (Tamegai et al), and the mechanism of superconductivity is discussed. Last but not least, a novel highest-density phase of boron is produced and characterized (Zarechnaya et al). We hope that this focus issue will help readers to understand the frontiers of superconductivity in semiconductors and assist in the application of new devices using a combination of superconductivity and semiconductivity.

  3. Semiconductor liquid crystal composition and methods for making the same

    DOEpatents

    Alivisatos, A. Paul; Li, Liang-shi

    2005-04-26

    Semiconductor liquid crystal compositions and methods for making such compositions are disclosed. One embodiment of the invention is directed to a liquid crystal composition including a solvent and semiconductor particles in the solvent. The solvent and the semiconductor particles are in an effective amount in the liquid crystal composition to form a liquid crystal phase.

  4. Integrated three-dimensional module heat exchanger for power electronics cooling

    DOEpatents

    Bennion, Kevin; Lustbader, Jason

    2013-09-24

    Embodiments discussed herein are directed to a power semiconductor packaging that removes heat from a semiconductor package through one or more cooling zones that are located in a laterally oriented position with respect to the semiconductor package. Additional embodiments are directed to circuit elements that are constructed from one or more modular power semiconductor packages.

  5. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    DOEpatents

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  6. Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

    DOEpatents

    Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; Jasinski, Jacek B.

    2017-09-05

    The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

  7. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  8. Surface preparation of substances for continuous convective assembly of fine particles

    DOEpatents

    Rossi, Robert

    2003-01-01

    A method for producing periodic nanometer-scale arrays of metal or semiconductor junctions on a clean semiconductor substrate surface is provided comprising the steps of: etching the substrate surface to make it hydrophilic, forming, under an inert atmosphere, a crystalline colloid layer on the substrate surface, depositing a metal or semiconductor material through the colloid layer onto the surface of the substrate, and removing the colloid from the substrate surface. The colloid layer is grown on the clean semiconductor surface by withdrawing the semiconductor substrate from a sol of colloid particles.

  9. High resolution three-dimensional doping profiler

    DOEpatents

    Thundat, Thomas G.; Warmack, Robert J.

    1999-01-01

    A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

  10. Methods for enhancing P-type doping in III-V semiconductor films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  11. Method of transferring a thin crystalline semiconductor layer

    DOEpatents

    Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

    2006-12-26

    A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

  12. Reflection technique for thermal mapping of semiconductors

    DOEpatents

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  13. Capital investment in semiconductors: The lifeblood of the US semiconductor industry

    NASA Astrophysics Data System (ADS)

    Finan, William F.

    1990-09-01

    An analysis is given of four proposals designed to improve capital formation for U.S. industry in general, and the semiconductor industry in particular. The National Advisory Committee on Semiconductors recommendations were to make the current research and experimentation (R and E) tax credit more effective, to reduce taxes on capital gains, to increase personal savings incentives, and to improve semiconductor manufacturing equipment depreciation rules. The results of the qualitative analysis of the proposals as well as a description of the methodology employed are given.

  14. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  15. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing [Lenexa, KS; Jiang, Hong-Xing [Manhattan, KS; Lin, Jing-Yu [Manhattan, KS

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  16. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  17. Electro-chemical sensors, sensor arrays and circuits

    DOEpatents

    Katz, Howard E.; Kong, Hoyoul

    2014-07-08

    An electro-chemical sensor includes a first electrode, a second electrode spaced apart from the first electrode, and a semiconductor channel in electrical contact with the first and second electrodes. The semiconductor channel includes a trapping material. The trapping material reduces an ability of the semiconductor channel to conduct a current of charge carriers by trapping at least some of the charge carriers to localized regions within the semiconductor channel. The semiconductor channel includes at least a portion configured to be exposed to an analyte to be detected, and the trapping material, when exposed to the analyte, interacts with the analyte so as to at least partially restore the ability of the semiconductor channel to conduct the current of charge carriers.

  18. Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    1999-01-01

    A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

  19. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  20. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  1. 75 FR 16887 - Self-Regulatory Organizations; NASDAQ OMX PHLX, Inc.; Order Granting Approval of Proposed Rule...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-02

    ... the Number of Components in the PHLX Semiconductor Sector SM Known as SOX SM , on Which Options are... expand the number of components in the PHLX Semiconductor Sector\\SM\\ known as SOX\\SM\\, on which options... 240.19b-4. \\3\\ PHLX Semiconductor Sector\\SM\\ may also be known as PHLX Semiconductor Index or PHLX...

  2. Context-based automated defect classification system using multiple morphological masks

    DOEpatents

    Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

    2002-01-01

    Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

  3. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

    PubMed

    Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

    2015-12-23

    We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

  4. Electrostatic separation for recycling conductors, semiconductors, and nonconductors from electronic waste.

    PubMed

    Xue, Mianqiang; Yan, Guoqing; Li, Jia; Xu, Zhenming

    2012-10-02

    Electrostatic separation has been widely used to separate conductors and nonconductors for recycling e-waste. However, the components of e-waste are complex, which can be classified as conductors, semiconductors, and nonconductors according to their conducting properties. In this work, we made a novel attempt to recover the mixtures containing conductors (copper), semiconductors (extrinsic silicon), and nonconductors (woven glass reinforced resin) by electrostatic separation. The results of binary mixtures separation show that the separation of conductor and nonconductor, semiconductor and nonconductor need a higher voltage level while the separation of conductor and semiconductor needs a higher roll speed. Furthermore, the semiconductor separation efficiency is more sensitive to the high voltage level and the roll speed than the conductor separation efficiency. An integrated process was proposed for the multiple mixtures separation. The separation efficiency of conductors and semiconductors can reach 82.5% and 88%, respectively. This study contributes to the efficient recycling of valuable resources from e-waste.

  5. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  6. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  7. Solid state potentiometric gaseous oxide sensor

    NASA Technical Reports Server (NTRS)

    Wachsman, Eric D. (Inventor); Azad, Abdul Majeed (Inventor)

    2003-01-01

    A solid state electrochemical cell (10a) for measuring the concentration of a component of a gas mixture (12) includes first semiconductor electrode (14) and second semiconductor electrode (16) formed from first and second semiconductor materials, respectively. The materials are selected so as to undergo a change in resistivity upon contacting a gas component, such as CO or NO. An electrolyte (18) is provided in contact with the first and second semiconductor electrodes. A reference cell can be included in contact with the electrolyte. Preferably, a voltage response of the first semiconductor electrode is opposite in slope direction to that of the second semiconductor electrode to produce a voltage response equal to the sum of the absolute values of the control system uses measured pollutant concentrations to direct adjustment of engine combustion conditions.

  8. Plasma Properties of an Exploding Semiconductor Igniter

    NASA Astrophysics Data System (ADS)

    McGuirk, J. S.; Thomas, K. A.; Shaffer, E.; Malone, A. L.; Baginski, T.; Baginski, M. E.

    1997-11-01

    Requirements by the automotive industry for low-cost, pyrotechnic igniters for automotive airbags have led to the development of several semiconductor devices. The properties of the plasma produced by the vaporization of an exploding semiconductor are necessary in order to minimize the electrical energy requirements. This work considers two silicon-based semiconductor devices: the semiconductor bridge (SCB) and the semiconductor junction igniter both consisting of etched silicon with vapor deposited aluminum structures. Electrical current passing through the device heats a narrow junction region to the point of vaporization creating an aluminum and silicon low-temperature plasma. This work will investigate the electrical characteristics of both devices and infer the plasma properties. Furthermore optical spectral measurements will be taken of the exploding devices to estimate the temperature and density of the plasma.

  9. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

    NASA Astrophysics Data System (ADS)

    Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

    1988-11-01

    A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

  10. The Morphologies of the Semiconductor Oxides and Their Gas-Sensing Properties

    PubMed Central

    Lv, Xin; Li, Shuang; Wang, Qingji

    2017-01-01

    Semiconductor oxide chemoresistive gas sensors are widely used for detecting deleterious gases due to low cost, simple preparation, rapid response and high sensitivity. The performance of gas sensor is greatly affected by the morphology of the semiconductor oxide. There are many semiconductor oxide morphologies, including zero-dimensional, one-dimensional, two-dimensional and three-dimensional ones. The semiconductor oxides with different morphologies significantly enhance the gas-sensing performance. Among the various morphologies, hollow nanostructures and core-shell nanostructures are always the focus of research in the field of gas sensors due to their distinctive structural characteristics and superior performance. Herein the morphologies of semiconductor oxides and their gas-sensing properties are reviewed. This review also proposes a potential strategy for the enhancement of gas-sensing performance in the future. PMID:29189714

  11. Method for depositing high-quality microcrystalline semiconductor materials

    DOEpatents

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  12. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  13. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner on Icelandic National Day In connection with the conference, a summer school for 40 research students was organized by the Nordic LENS network. The summer school took place in Reykjavik on 11-14 June. For more information on the school please visit the website. The next Nordic Semiconductor meeting, NSM 2011, is scheduled to take place in Aarhus, Denmark, 19-22 June 2011. A full participant list is available in the PDF of this article.

  14. Method of preparing nitrogen containing semiconductor material

    DOEpatents

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  15. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A Paul [Oakland, CA; Scher, Erik C [San Francisco, CA; Manna, Liberato [Palo Del Collie, IT

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  16. Nanomembrane structures having mixed crystalline orientations and compositions

    DOEpatents

    Lagally, Max G.; Scott, Shelley A.; Savage, Donald E.

    2014-08-12

    The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

  17. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  18. Surface passivation process of compound semiconductor material using UV photosulfidation

    DOEpatents

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  19. Researchers Validate UV Light's Use in Improving Semiconductors | News |

    Science.gov Websites

    device. The ability to use different classes of semiconductors could create additional possibilities for integrating a variety of different semiconductors in the future," Park said. The researchers explored

  20. Manipulating semiconductor colloidal stability through doping.

    PubMed

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  1. ZnSe based semiconductor core-shell structures: From preparation to application

    NASA Astrophysics Data System (ADS)

    Sun, Chengcheng; Gu, Yarong; Wen, Weijia; Zhao, Lijuan

    2018-07-01

    Inorganic core-shell semiconductor materials have attracted increasing interest in recent years because of the unique structure, stable chemical properties and high performance in devices. With special properties such as a direct band-gap and excellent photoelectrical characteristics, ZnSe based semiconductor core-shell structures are promising materials for applications in such fields as photocatalysts, light-emitting diodes, solar cells, photodetectors, biomedical science and so on. However, few reviews on ZnSe based semiconductor core-shell structures have been reported so far. Therefore this manuscript mainly focuses on the research activities on ZnSe based semiconductor core-shell composites including various preparation methods and the applications of these core-shell structures, especially in photocatalysts, light emitting, solar cells and photodetectors. The possibilities and limitations of studies on ZnSe based semiconductor core-shell composites are also highlighted.

  2. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  3. Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures

    PubMed Central

    Sang, Liwen; Hu, Junqing; Zou, Rujia; Koide, Yasuo; Liao, Meiyong

    2013-01-01

    The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors. PMID:23917790

  4. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

    2014-11-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

  5. Single steady frequency and narrow-linewidth external-cavity semiconductor laser

    NASA Astrophysics Data System (ADS)

    Zhao, Weirui; Jiang, Pengfei; Xie, Fuzeng

    2003-11-01

    A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10-3°C by temperature control system. The experiments have been carried out and the results obtained - the spectral line width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

  6. Visible light photoreduction of CO.sub.2 using heterostructured catalysts

    DOEpatents

    Matranga, Christopher; Thompson, Robert L; Wang, Congjun

    2015-03-24

    The method provides for use of sensitized photocatalyst for the photocatalytic reduction of CO.sub.2 under visible light illumination. The photosensitized catalyst is comprised of a wide band gap semiconductor material, a transition metal co-catalyst, and a semiconductor sensitizer. The semiconductor sensitizer is photoexcited by visible light and forms a Type II band alignment with the wide band gap semiconductor material. The wide band gap semiconductor material and the semiconductor sensitizer may be a plurality of particles, and the particle diameters may be selected to accomplish desired band widths and optimize charge injection under visible light illumination by utilizing quantum size effects. In a particular embodiment, CO.sub.2 is reduced under visible light illumination using a CdSe/Pt/TiO2 sensitized photocatalyst with H.sub.2O as a hydrogen source.

  7. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1983-01-01

    Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

  8. Deposition method for producing silicon carbide high-temperature semiconductors

    DOEpatents

    Hsu, George C.; Rohatgi, Naresh K.

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  9. Electronic structure of ferromagnetic semiconductor material on the monoclinic and rhombohedral ordered double perovskites La{sub 2}FeCoO{sub 6}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fuh, Huei-Ru; Chang, Ching-Ray; Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan

    2015-05-07

    Double perovskite La{sub 2}FeCoO{sub 6} with monoclinic structure and rhombohedra structure show as ferromagnetic semiconductor based on density functional theory calculation. The ferromagnetic semiconductor state can be well explained by the superexchange interaction. Moreover, the ferromagnetic semiconductor state remains under the generalized gradient approximation (GGA) and GGA plus onsite Coulomb interaction calculation.

  10. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  11. Roadmap on semiconductor-cell biointerfaces

    NASA Astrophysics Data System (ADS)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  12. Methods and devices for fabricating and assembling printable semiconductor elements

    DOEpatents

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  13. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  14. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  15. Group I-III-VI.sub.2 semiconductor films for solar cell application

    DOEpatents

    Basol, Bulent M.; Kapur, Vijay K.

    1991-01-01

    This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

  16. Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometric Approaches to Proteome Analysis

    PubMed Central

    Kailasa, Suresh Kumar; Cheng, Kuang-Hung; Wu, Hui-Fen

    2013-01-01

    Semiconductor quantum dots (QDs) or nanoparticles (NPs) exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs) in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis. PMID:28788422

  17. III-V semiconductor resonators: A new strategy for broadband light perfect absorbers

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoshan; Chen, Jian; Liu, Jiasong; Huang, Zhenping; Yu, Meidong; Pan, Pingping; Liu, Zhengqi

    2017-11-01

    Broadband light perfect absorbers (BPAs) are desirable for applications in numerous optoelectronics devices. In this work, a semiconductor-based broadband light perfect absorber (S-BPA) has been numerically demonstrated by utilizing plasmonlike resonances of high-index semiconductor resonators. A maximal absorption of 99.7% is observed in the near-infrared region. By taking the absorption above 80% into account, the spectral bandwidth reaches 340 nm. The absorption properties mainly originate from the optical cavity modes induced by the cylinder resonators and ultrathin semiconductor film. These optical properties and simple structural features can maintain the absorber platform with wide applications in semiconductor optoelectronics.

  18. Monolithic integrated high-T.sub.c superconductor-semiconductor structure

    NASA Technical Reports Server (NTRS)

    Barfknecht, Andrew T. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Clayton, Stanley R. (Inventor)

    2000-01-01

    A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

  19. Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

    PubMed

    Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

    2014-01-01

    The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

  20. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

    2000-01-01

    A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

  1. Field-effect P-N junction

    DOEpatents

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  2. A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

    PubMed

    Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

    2014-12-23

    An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Near-infrared light emitting device using semiconductor nanocrystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon

    A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

  4. Charge regulation at semiconductor-electrolyte interfaces.

    PubMed

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2015-07-01

    The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

  5. Architectures and criteria for the design of high efficiency organic photovoltaic cells

    DOEpatents

    Rand, Barry; Forrest, Stephen R; Burk, Diana Pendergrast

    2015-03-24

    An organic photovoltaic cell includes an anode and a cathode, and a plurality of organic semiconductor layers between the anode and the cathode. At least one of the anode and the cathode is transparent. Each two adjacent layers of the plurality of organic semiconductor layers are in direct contact. The plurality of organic semiconductor layers includes an intermediate layer consisting essentially of a photoconductive material, and two sets of at least three layers. A first set of at least three layers is between the intermediate layer and the anode. Each layer of the first set consists essentially of a different organic semiconductor material having a higher LUMO and a higher HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the cathode. A second set of at least three layers is between the intermediate layer and the cathode. Each layer of the second set consists essentially of a different organic semiconductor material having a lower LUMO and a lower HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the anode.

  6. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  7. Route to the Smallest Doped Semiconductor: Mn(2+)-Doped (CdSe)13 Clusters.

    PubMed

    Yang, Jiwoong; Fainblat, Rachel; Kwon, Soon Gu; Muckel, Franziska; Yu, Jung Ho; Terlinden, Hendrik; Kim, Byung Hyo; Iavarone, Dino; Choi, Moon Kee; Kim, In Young; Park, Inchul; Hong, Hyo-Ki; Lee, Jihwa; Son, Jae Sung; Lee, Zonghoon; Kang, Kisuk; Hwang, Seong-Ju; Bacher, Gerd; Hyeon, Taeghwan

    2015-10-14

    Doping semiconductor nanocrystals with magnetic transition-metal ions has attracted fundamental interest to obtain a nanoscale dilute magnetic semiconductor, which has unique spin exchange interaction between magnetic spin and exciton. So far, the study on the doped semiconductor NCs has usually been conducted with NCs with larger than 2 nm because of synthetic challenges. Herein, we report the synthesis and characterization of Mn(2+)-doped (CdSe)13 clusters, the smallest doped semiconductors. In this study, single-sized doped clusters are produced in large scale. Despite their small size, these clusters have semiconductor band structure instead of that of molecules. Surprisingly, the clusters show multiple excitonic transitions with different magneto-optical activities, which can be attributed to the fine structure splitting. Magneto-optically active states exhibit giant Zeeman splittings up to elevated temperatures (128 K) with large g-factors of 81(±8) at 4 K. Our results present a new synthetic method for doped clusters and facilitate the understanding of doped semiconductor at the boundary of molecules and quantum nanostructure.

  8. General Observation of Photocatalytic Oxygen Reduction to Hydrogen Peroxide by Organic Semiconductor Thin Films and Colloidal Crystals.

    PubMed

    Gryszel, Maciej; Sytnyk, Mykhailo; Jakešová, Marie; Romanazzi, Giuseppe; Gabrielsson, Roger; Heiss, Wolfgang; Głowacki, Eric Daniel

    2018-04-25

    Low-cost semiconductor photocatalysts offer unique possibilities for industrial chemical transformations and energy conversion applications. We report that a range of organic semiconductors are capable of efficient photocatalytic oxygen reduction to H 2 O 2 in aqueous conditions. These semiconductors, in the form of thin films, support a 2-electron/2-proton redox cycle involving photoreduction of dissolved O 2 to H 2 O 2 , with the concurrent photooxidation of organic substrates: formate, oxalate, and phenol. Photochemical oxygen reduction is observed in a pH range from 2 to 12. In cases where valence band energy of the semiconductor is energetically high, autoxidation competes with oxidation of the donors, and thus turnover numbers are low. Materials with deeper valence band energies afford higher stability and also oxidation of H 2 O to O 2 . We found increased H 2 O 2 evolution rate for surfactant-stabilized nanoparticles versus planar thin films. These results evidence that photochemical O 2 reduction may be a widespread feature of organic semiconductors, and open potential avenues for organic semiconductors for catalytic applications.

  9. Energetics of the Semiconductor-Electrolyte Interface.

    ERIC Educational Resources Information Center

    Turner, John A.

    1983-01-01

    The use of semiconductors as electrodes for electrochemistry requires an understanding of both solid-state physics and electrochemistry, since phenomena associated with both disciplines are seen in semiconductor/electrolyte systems. The interfacial energetics of these systems are discussed. (JN)

  10. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  11. Early Stages of Interface Formation at Compound Semiconductor Surfaces Studied by Scanning Tunneling Microscopy

    DTIC Science & Technology

    1991-10-01

    classical image potential in an ideal creasing gap separation, that is specific to the form of the metal- insulator -semiconductor (MIS) junction...with which one can precisely adjust s, and hence continuously vary the vacvuum barrier, is a potentially valuable tool for investigating this effect- By... insulator -semiconductor (MIS) junction similar to that shown in Fig. I diverge at the semiconductor-vacuum and vacuum-metal interfaces [7,81. These

  12. Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Hughes, Steven; Citrin, David

    1998-01-01

    We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

  13. The AMOS cell - An improved metal-semiconductor solar cell. [Antireflection coated Metal Oxide Semiconductor

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y.-C. M.

    1975-01-01

    A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

  14. Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies

    NASA Astrophysics Data System (ADS)

    Kotadiya, Naresh B.; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

    2018-02-01

    Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

  15. Creating semiconductor metafilms with designer absorption spectra

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate thatmore » near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells.« less

  16. Organic semiconductor crystals.

    PubMed

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  17. Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

    PubMed

    Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

    2018-04-01

    Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

  18. Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

    NASA Astrophysics Data System (ADS)

    Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

    2017-08-01

    Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

  19. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  20. Photon detector configured to employ the Gunn effect and method of use

    DOEpatents

    Cich, Michael J

    2015-03-17

    Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

  1. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    DOEpatents

    Forrest, Stephen R.; Wei, Guodan

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  2. A compact semiconductor digital interferometer and its applications

    NASA Astrophysics Data System (ADS)

    Britsky, Oleksander I.; Gorbov, Ivan V.; Petrov, Viacheslav V.; Balagura, Iryna V.

    2015-05-01

    The possibility of using semiconductor laser interferometers to measure displacements at the nanometer scale was demonstrated. The creation principles of miniature digital Michelson interferometers based on semiconductor lasers were proposed. The advanced processing algorithm for the interferometer quadrature signals was designed. It enabled to reduce restrictions on speed of measured movements. A miniature semiconductor digital Michelson interferometer was developed. Designing of the precision temperature stability system for miniature low-cost semiconductor laser with 0.01ºС accuracy enabled to use it for creation of compact interferometer rather than a helium-neon one. Proper firmware and software was designed for the interferometer signals real-time processing and conversion in to respective shifts. In the result the relative displacement between 0-500 mm was measured with a resolution of better than 1 nm. Advantages and disadvantages of practical use of the compact semiconductor digital interferometer in seismometers for the measurement of shifts were shown.

  3. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

    PubMed

    Fluegel, Brian; Mialitsin, Aleksej V; Beaton, Daniel A; Reno, John L; Mascarenhas, Angelo

    2015-05-28

    Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10(-4). Comparing our strain sensitivity and signal strength in Al(x)Ga(1-x)As with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10(3), thus obviating key constraints in semiconductor strain metrology.

  4. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

    PubMed Central

    Fluegel, Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; Reno, John L.; Mascarenhas, Angelo

    2015-01-01

    Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10−4. Comparing our strain sensitivity and signal strength in AlxGa1−xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology. PMID:26017853

  5. Method and structure for passivating semiconductor material

    DOEpatents

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  6. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    DOEpatents

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  7. Macroporous Semiconductors

    PubMed Central

    Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

    2010-01-01

    Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  8. Room-temperature ductile inorganic semiconductor.

    PubMed

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag 2 S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  9. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  10. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  11. Printable semiconductor structures and related methods of making and assembling

    DOEpatents

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  12. Printable semiconductor structures and related methods of making and assembling

    DOEpatents

    Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Durham, NC; Lee, Keon Jae [Tokyo, JP; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Westmont, IL; Meitl, Matthew [Raleigh, NC; Zhu, Zhengtao [Rapid City, SD; Ko, Heung Cho [Urbana, IL; Mack, Shawn [Goleta, CA

    2011-10-18

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  13. Printable semiconductor structures and related methods of making and assembling

    DOEpatents

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2010-09-21

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  14. Electron transfer dynamics and yield from gold nanoparticle to different semiconductors induced by plasmon band excitation

    NASA Astrophysics Data System (ADS)

    Du, L. C.; Xi, W. D.; Zhang, J. B.; Matsuzaki, H.; Furube, A.

    2018-06-01

    Photoinduced electron transfer from gold nanoparticles (NPs) to semiconductor under plasmon excitation is an important phenomenon in photocatalysis and solar cell applications. Femtosecond plasmon-induced electron transfer from gold NPs to the conduction band of different semiconductor like TiO2, SnO2, and ZnO was monitored at 3440 nm upon optical excitation of the surface plasmon band of gold NPs. It was found that electron injection was completed within 240 fs and the electron injection yield reached 10-30% under 570 nm excitation. It means TiO2 is not the only proper semiconductor as electron acceptors in such gold/semiconductor nanoparticle systems.

  15. Thermovoltaic semiconductor device including a plasma filter

    DOEpatents

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  16. Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

    NASA Astrophysics Data System (ADS)

    Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

    2018-01-01

    We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

  17. Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

    NASA Technical Reports Server (NTRS)

    Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Russell, Stephen D. (Inventor); Garcia, Graham A. (Inventor); Barfknecht, Andrew T. (Inventor); Clayton, Stanley R. (Inventor)

    2000-01-01

    A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

  18. Room-temperature ductile inorganic semiconductor

    NASA Astrophysics Data System (ADS)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  19. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  20. Method and system for powering and cooling semiconductor lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Telford, Steven J; Ladran, Anthony S

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  1. Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

    PubMed

    Jang, Hyuk-Jae; Richter, Curt A

    2017-01-01

    Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Organic semiconductor growth and morphology considerations for organic thin-film transistors.

    PubMed

    Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

    2010-09-08

    Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

  3. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1982-01-01

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  4. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOEpatents

    Mickelsen, Reid A [Bellevue, WA; Chen, Wen S [Seattle, WA

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  5. Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

    NASA Astrophysics Data System (ADS)

    Seiler, David G.

    1997-10-01

    A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

  6. Role of direct electron-phonon coupling across metal-semiconductor interfaces in thermal transport via molecular dynamics.

    PubMed

    Lin, Keng-Hua; Strachan, Alejandro

    2015-07-21

    Motivated by significant interest in metal-semiconductor and metal-insulator interfaces and superlattices for energy conversion applications, we developed a molecular dynamics-based model that captures the thermal transport role of conduction electrons in metals and heat transport across these types of interface. Key features of our model, denoted eleDID (electronic version of dynamics with implicit degrees of freedom), are the natural description of interfaces and free surfaces and the ability to control the spatial extent of electron-phonon (e-ph) coupling. Non-local e-ph coupling enables the energy of conduction electrons to be transferred directly to the semiconductor/insulator phonons (as opposed to having to first couple to the phonons in the metal). We characterize the effect of the spatial e-ph coupling range on interface resistance by simulating heat transport through a metal-semiconductor interface to mimic the conditions of ultrafast laser heating experiments. Direct energy transfer from the conduction electrons to the semiconductor phonons not only decreases interfacial resistance but also increases the ballistic transport behavior in the semiconductor layer. These results provide new insight for experiments designed to characterize e-ph coupling and thermal transport at the metal-semiconductor/insulator interfaces.

  7. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

    PubMed Central

    Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

    2017-01-01

    Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided. PMID:28788080

  8. Electron gas grid semiconductor radiation detectors

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  9. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

    PubMed

    Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

    2017-07-28

    Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  10. Photoelectrochemistry: Introductory Concepts.

    ERIC Educational Resources Information Center

    Finklea, Harry O.

    1983-01-01

    Photoelectrochemistry is based on the semiconductor electrode. It is the semiconductor's ability to absorb light and convert it to electrical and/or chemical energy that forms the basis for the semiconductor liquid-junction solar cell. To understand how this occurs, solid-state physics concepts are discussed. (Author/JN)

  11. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each...

  12. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each...

  13. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS ELECTRICAL INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each...

  14. Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vela Becerra, Javier; Ruberu, T. Purnima A.

    A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

  15. Large-area, laterally-grown epitaxial semiconductor layers

    DOEpatents

    Han, Jung; Song, Jie; Chen, Danti

    2017-07-18

    Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

  16. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  17. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  18. Engineering the unique 2D mat of graphene to achieve graphene-TiO2 nanocomposite for photocatalytic selective transformation: what advantage does graphene have over its forebear carbon nanotube?

    PubMed

    Zhang, Yanhui; Tang, Zi-Rong; Fu, Xianzhi; Xu, Yi-Jun

    2011-09-27

    Increasing interest has been devoted to synthesizing graphene (GR)-semiconductor nanocomposites as photocatalysts for potential applications, which is very similar to its forebear carbon nanotube (CNT)-semiconductor photocatalysts. Unfortunately, a thoughtful and inevitable comparison between GR- and CNT-semiconductors as photocatalysts is often neglected in literature. This situation may give incomplete or exaggerated information on the contribution role of GR to enhance the semiconductor photocatalytic activity, as compared to CNT. Thus, our knowledge regarding the specific advantage of GR over CNT on how to design more efficient GR-semiconductor nanocomposites and understanding the origin of their enhanced photocatalytic performance is far from satisfactory. By taking the TiO(2) semiconductor as an example, we conceptually demonstrate how to synthesize a more efficient GR-TiO(2) nanocomposite as a visible light photocatalyst toward selective oxidation of alcohols under mild conditions. Comparison between GR-TiO(2) and CNT-TiO(2) discloses the prominent advantage of GR over CNT on both controlling the morphology of GR-TiO(2) nanocomposite and enhancing the photocatalytic activity of TiO(2). This work clearly highlights the importance and necessity for a comparison investigation between GR- and CNT-semiconductors as photocatalysts, which will promote our in-depth fundamental understanding on the analogy and difference between GR and CNT on controlling the morphology of GR (or CNT)-semiconductor nanocomposites and enhancing the photocatalytic performance. Therefore, we appeal the photocatalysis community to pay attention to this respect rather than separately imposing hype on the miracle of GR in much the same way as its carbon forebears, which could significantly advance our rational fabrication of smart GR-semiconductor nanocomposites for artificial photosynthesis. © 2011 American Chemical Society

  19. High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In,Fe)Sb

    NASA Astrophysics Data System (ADS)

    Thanh Tu, Nguyen; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2018-06-01

    Over the past two decades, intensive studies on various ferromagnetic semiconductor (FMS) materials have failed to realize reliable FMSs that have a high Curie temperature (T C > 300 K), good compatibility with semiconductor electronics, and characteristics superior to those of their nonmagnetic host semiconductors. Here, we demonstrate a new n-type Fe-doped narrow-gap III–V FMS, (In1‑ x ,Fe x )Sb. Its T C is unexpectedly high, reaching ∼335 K at a modest Fe concentration (x) of 16%. The anomalous Hall effect and magnetic circular dichroism (MCD) spectroscopy indicate that the high-temperature ferromagnetism in (In,Fe)Sb thin films is intrinsic and originates from the zinc-blende (In,Fe)Sb alloy semiconductor.

  20. Liquid crystal cells with built-in CdSe nanotubes for chromogenic smart emission devices.

    PubMed

    Lin, Tsung Ju; Chen, Chin-Chang; Cheng, Soofin; Chen, Yang Fang

    2008-01-21

    A simple and general approach for controlling optical anisotropy of nanostructured semiconductors is reported. Our design involves the fabrication of liquid crystal devices with built-in semiconductor nanotubes. Quite interestingly, it is found that semiconductor nanotubes can be well aligned along the orientation of liquid crystals molecules automatically, resulting in a very large emission anisotropy with the degree of polarization up to 72%. This intriguing result manifests a way to obtain well aligned semiconductor nanotubes and the emission anisotropy can be easily manipulated by an external bias. The ability to well control the emission anisotropy should open up new opportunities for nanostructured semiconductors, including optical filters, polarized light emitting diodes, flat panel displays, and many other chromogenic smart devices.

  1. Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

    DOEpatents

    Hansen, W.L.; Haller, E.E.

    1980-09-19

    Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

  2. Experimental study on the monomer structure of solar semiconductor cold wall

    NASA Astrophysics Data System (ADS)

    Fu, Yuanyuan; Liu, Qiuxin; Chen, Tianshou

    2018-06-01

    In this paper, solar semiconductor cold wall structure was adopted in the net-zero energy buildings, NZEB for short. The heat transfer and refrigeration effect of the monomer structure of semiconductor cold wall were tested, we get that the monomer structure of semiconductor cold wall has certain cooling effect. However, the heat exchange effect is not good of the cold and hot aluminum plate only through natural convection and radiation heat transfer. It is necessary to further study the process of semiconductor refrigeration and heat transfer and the factors that affect the cooling effect. At the same time, it put forward a series of suggestions and improvement opinion for NZEB in hot summer and cold winter areas.

  3. Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits

    NASA Astrophysics Data System (ADS)

    Chen, Z.; Harris, V. G.

    2012-10-01

    It is widely recognized that as electronic systems' operating frequency shifts to microwave and millimeter wave bands, the integration of ferrite passive devices with semiconductor solid state active devices holds significant advantages in improved miniaturization, bandwidth, speed, power and production costs, among others. Traditionally, ferrites have been employed in discrete bulk form, despite attempts to integrate ferrite as films within microwave integrated circuits. Technical barriers remain centric to the incompatibility between ferrite and semiconductor materials and their processing protocols. In this review, we present past and present efforts at ferrite integration with semiconductor platforms with the aim to identify the most promising paths to realizing the complete integration of on-chip ferrite and semiconductor devices, assemblies and systems.

  4. 32nd International Conference on the Physics of Semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chelikowsky, James

    The International Conference on the Physics of Semiconductors (ICPS) continues a series of biennial conferences that began in the 1950's. ICPS is the premier meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties with an emphasis on new materials and their applications. The meeting will reflect the state of art in the semiconductor physics field and will serve as a forum where scholars, researchers, and specialists can interact to discuss future research directions and technological advancements. The conference typically draws 1,000 international physicists, scientists, and students. This is one of the largest sciencemore » meetings on semiconductors and related materials to be held in the United States.« less

  5. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, Carol I. H.; Dishman, James L.

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  6. Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

    DOEpatents

    Norman, Andrew G; Ptak, Aaron J

    2013-08-13

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

  7. Charge carrier transport and optical properties of SAM-induced conducting channel in organic semiconductors.

    NASA Astrophysics Data System (ADS)

    Podzorov, Vitaly

    2009-03-01

    Certain types of self-assembled monolayers (SAM) grown directly at the surface of organic semiconductors can induce a high surface conductivity in these materials [1]. For example, the conductivity induced by perfluorinated alkyl silanes in organic molecular crystals approaches 10 to -5 Siemens per square. The observed large electronic effect opens new opportunities for nanoscale surface functionalization of organic semiconductors and provides experimental access to the regime of high carrier density. Here, we will discuss temperature variable measurements of SAM-induced conductivity in several types of organic semiconductors. [1]. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, ``Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers'', Nature Mat. 7, 84 (2008).

  8. Photoelectroconversion by Semiconductors: A Physical Chemistry Experiment.

    ERIC Educational Resources Information Center

    Fan, Qinbai; And Others

    1995-01-01

    Presents an experiment designed to give students some experience with photochemistry, electrochemistry, and basic theories about semiconductors. Uses a liquid-junction solar cell and illustrates some fundamental physical and chemical principles related to light and electricity interconversion as well as the properties of semiconductors. (JRH)

  9. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 7 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER 100 GROSS TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier...

  10. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 7 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER 100 GROSS TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier...

  11. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 7 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) SMALL PASSENGER VESSELS (UNDER 100 GROSS TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier...

  12. 76 FR 63282 - Foreign-Trade Zone 140-Flint, Michigan; Application for Subzone; Hemlock Semiconductor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-12

    ... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [Docket 61-2011] Foreign-Trade Zone 140--Flint, Michigan; Application for Subzone; Hemlock Semiconductor Corporation (Polysilicon); Hemlock, MI An... Hemlock Semiconductor Corporation (HSC), located in Hemlock, Michigan. The application was submitted...

  13. Narrowband light detection via internal quantum efficiency manipulation of organic photodiodes

    NASA Astrophysics Data System (ADS)

    Armin, Ardalan; Jansen-van Vuuren, Ross D.; Kopidakis, Nikos; Burn, Paul L.; Meredith, Paul

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is material-agnostic and applicable to other disordered and polycrystalline semiconductors.

  14. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

    PubMed Central

    Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

    2013-01-01

    Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

  15. Anisotropy-based crystalline oxide-on-semiconductor material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  16. Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    S Kim; M Jang; H Yang

    2011-12-31

    Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less

  17. Suppressing molecular vibrations in organic semiconductors by inducing strain

    PubMed Central

    Kubo, Takayoshi; Häusermann, Roger; Tsurumi, Junto; Soeda, Junshi; Okada, Yugo; Yamashita, Yu; Akamatsu, Norihisa; Shishido, Atsushi; Mitsui, Chikahiko; Okamoto, Toshihiro; Yanagisawa, Susumu; Matsui, Hiroyuki; Takeya, Jun

    2016-01-01

    Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm2 V−1 s−1 by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices. PMID:27040501

  18. Suppressing molecular vibrations in organic semiconductors by inducing strain.

    PubMed

    Kubo, Takayoshi; Häusermann, Roger; Tsurumi, Junto; Soeda, Junshi; Okada, Yugo; Yamashita, Yu; Akamatsu, Norihisa; Shishido, Atsushi; Mitsui, Chikahiko; Okamoto, Toshihiro; Yanagisawa, Susumu; Matsui, Hiroyuki; Takeya, Jun

    2016-04-04

    Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm(2) V(-1) s(-1) by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.

  19. Narrowband Light Detection via Internal Quantum Efficiency Manipulation of Organic Photodiodes

    DOE PAGES

    Armin, A.; Jansen-van Vuuren, R. D.; Kopidakis, N.; ...

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (inputmore » filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is materialagnostic and applicable to other disordered and polycrystalline semiconductors.« less

  20. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

    DOEpatents

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1988-06-16

    An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

  1. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.; Vook, Frederick L.

    1989-01-01

    An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

  2. Conduit for high temperature transfer of molten semiconductor crystalline material

    NASA Technical Reports Server (NTRS)

    Fiegl, George (Inventor); Torbet, Walter (Inventor)

    1983-01-01

    A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

  3. Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor

    PubMed Central

    Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

    2016-01-01

    Large spin-splitting in the conduction band and valence band of ferromagnetic semiconductors, predicted by the influential mean-field Zener model and assumed in many spintronic device proposals, has never been observed in the mainstream p-type Mn-doped ferromagnetic semiconductors. Here, using tunnelling spectroscopy in Esaki-diode structures, we report the observation of such a large spontaneous spin-splitting energy (31.7–50 meV) in the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As, which is surprising considering the very weak s-d exchange interaction reported in several zinc-blende type semiconductors. The mean-field Zener model also fails to explain consistently the ferromagnetism and the spin-splitting energy of (In,Fe)As, because we found that the Curie temperature values calculated using the observed spin-splitting energies are much lower than the experimental ones by a factor of 400. These results urge the need for a more sophisticated theory of ferromagnetic semiconductors. PMID:27991502

  4. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

    DOE PAGES

    Fluegel., Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; ...

    2015-05-28

    In this study, the semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10 –4. Comparing our strain sensitivity andmore » signal strength in Al xGa 1–xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10 3, thus obviating key constraints in semiconductor strain metrology.« less

  5. A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

    PubMed Central

    Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

    2012-01-01

    Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

  6. Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

    PubMed

    Wu, Menghao; Dong, Shuai; Yao, Kailun; Liu, Junming; Zeng, Xiao Cheng

    2016-11-09

    Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS 2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110 , 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

  7. Efficient Solar Energy Conversion Systems for Hydrogen Production from Water using Semiconductor Photoelectrodes and Photocatalysts

    NASA Astrophysics Data System (ADS)

    Sayama, K.; Arai, T.

    2008-02-01

    Efficient solar energy conversion system for hydrogen production from water, solar-hydrogen system, is one of most important technologies for genuinely sustainable development of the society in the world wide scale. However, there are many problems to breakthrough such as low solar-to-H2 efficiency (STH), high cost, low stability, etc in order to realize the system practically and economically. The solar-hydrogen systems using semiconductors are mainly classified as follows; solar cell-electrolysis system, semiconductor photoelectrode system, and photocatalyst system. There are various merits and demerits in each system. The solar cell-electrolysis system is very efficient but is very high cost. The photocatalyst system is very simple and relatively low cost, but the efficiency is still very low. On the other hand, various semiconductor systems with high efficiency have been investigated. A high STH more than 10% was reported using non-oxide semiconductor photoelectrodes such as InGaP, while the preparation methods were costly. In a European project, some simple oxide semiconductor photoelectrodes such as Fe2O3 and WO3 are mainly studied. Here, we investigated various photoelectrodes using mixed metal oxide especially on BiVO4 semiconductor, and a high throughput screening system of new visible light responsible semiconductors for photoelectrode and photocatalyst. Moreover, photocatalysis-electrolysis hybrid system for economical H2 production is studied to overcome the demerit of photocatalyst system on the gas separation and low efficiency.

  8. 37 CFR 211.1 - General provisions.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... the Copyright Office concerning the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620, chapter... apply, where appropriate, to the administration by the Copyright Office of the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620. (c) For purposes of this part, the terms semiconductor chip product...

  9. 37 CFR 211.1 - General provisions.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... the Copyright Office concerning the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620, chapter... apply, where appropriate, to the administration by the Copyright Office of the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620. (c) For purposes of this part, the terms semiconductor chip product...

  10. 76 FR 65751 - Notice of intent to grant exclusive license

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-24

    ... Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal,'' U.S. Patent Application No. 12/254,134 entitled ``Hybrid Bandgap Engineering for Super-Hetero- Epitaxial Semiconductor Materials... Semiconductor Materials on Trigonal Substrate with Single Crystal Properties and Devices Based on Such Materials...

  11. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, Martin; Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

    1998-01-01

    A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  12. 37 CFR 211.1 - General provisions.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... with the Copyright Office concerning the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620... apply, where appropriate, to the administration by the Copyright Office of the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620. (c) For purposes of this part, the terms semiconductor chip product...

  13. 37 CFR 211.1 - General provisions.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... the Copyright Office concerning the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620, chapter... apply, where appropriate, to the administration by the Copyright Office of the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620. (c) For purposes of this part, the terms semiconductor chip product...

  14. 37 CFR 211.1 - General provisions.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... the Copyright Office concerning the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620, chapter... apply, where appropriate, to the administration by the Copyright Office of the Semiconductor Chip Protection Act of 1984, Pub. L. 98-620. (c) For purposes of this part, the terms semiconductor chip product...

  15. Nanocrystal structures

    DOEpatents

    Eisler, Hans J [Stoneham, MA; Sundar, Vikram C [Stoneham, MA; Walsh, Michael E [Everett, MA; Klimov, Victor I [Los Alamos, NM; Bawendi, Moungi G [Cambridge, MA; Smith, Henry I [Sudbury, MA

    2008-12-30

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  16. Nanocrystal structures

    DOEpatents

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2006-12-19

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  17. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

    DOEpatents

    Guha, Subhendu; Ovshinsky, Stanford R.

    1988-10-04

    An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

  18. neutron-Induced Failures in semiconductor Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wender, Stephen Arthur

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  19. 37 CFR 211.5 - Deposit of identifying material.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... fixed in the form of the semiconductor chip product in which it was first commercially exploited... photograph of each layer of the work fixed in a semiconductor chip product. The visually perceptible... complete form of the mask work as fixed in a semiconductor product. (ii) Where the mask work contribution...

  20. 76 FR 14687 - In the Matter of Certain Semiconductor Chips and Products Containing Same; Notice of Commission...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-17

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-753] In the Matter of Certain Semiconductor Chips and Products Containing Same; Notice of Commission Determination Not To Review an Initial... semiconductor chips and products containing the same. The Commission's notice of investigation named numerous...

  1. 78 FR 24234 - Certain Semiconductor Chips With DRAM Circuitry, and Modules and Products Containing Same; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-24

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-819] Certain Semiconductor Chips With DRAM Circuitry, and Modules and Products Containing Same; Notice of Request for Statements on the... order barring the entry of unlicensed DRAM semiconductor chips manufactured by Nanya Technology...

  2. 77 FR 14424 - Certain Semiconductor Chips and Products Containing Same; Request for Statements On the Public...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-09

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-753] Certain Semiconductor Chips and Products Containing Same; Request for Statements On the Public Interest AGENCY: U.S. International Trade... semiconductor chips; and cease and desist orders against five respondents. Comments should address whether...

  3. 76 FR 76934 - Foreign-Trade Zones 140 and 78; Applications for Subzone Authority; Dow Corning Corporation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-09

    ... 140 and 78; Applications for Subzone Authority; Dow Corning Corporation, Hemlock Semiconductor Corporation and Hemlock Semiconductor, L.L.C.; Extension of Comment Periods The comment periods for the...- 63283, October 12, 2011), at the Hemlock Semiconductor Corporation facility in Hemlock, Michigan (76 FR...

  4. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

    1998-01-27

    A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  5. Reliability Prediction Models for Discrete Semiconductor Devices

    DTIC Science & Technology

    1988-07-01

    influence failure rate were device construction, semiconductor material, junction temperature, electrical stress, circuit application., a plication...found to influence failure rate were device construction, semiconductor material, junction temperature, electrical stress, circuit application...MFA Airbreathlng 14issile, Flight MFF Missile, Free Flight ML Missile, Launch MMIC Monolithic Microwave Integrated Circuits MOS Metal-Oxide

  6. Postirradiation Effects In Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Shaw, David C.; Barnes, Charles E.

    1993-01-01

    Two reports discuss postirradiation effects in integrated circuits. Presents examples of postirradiation measurements of performances of integrated circuits of five different types: dual complementary metal oxide/semiconductor (CMOS) flip-flop; CMOS analog multiplier; two CMOS multiplying digital-to-analog converters; electrically erasable programmable read-only memory; and semiconductor/oxide/semiconductor octal buffer driver.

  7. 75 FR 14467 - In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-25

    ... Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of... the sale within the United States after importation of certain dynamic random access memory semiconductors and products containing same, including memory modules, by reason of infringement of certain...

  8. 75 FR 16507 - In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-01

    ... Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers and Products Containing Same... synchronous dynamic random access memory controllers and products containing same by reason of infringement of... semiconductor chips having synchronous dynamic random access memory controllers and products containing same...

  9. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-729] Certain Semiconductor Products Made by... the sale within the United States after importation of certain semiconductor products made by advanced lithography techniques and products containing same by reason of infringement of certain claims of U.S. Patent...

  10. 76 FR 14688 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-17

    ... Integrated Circuit Semiconductor Chips and Products Containing the Same; Notice of a Commission Determination... certain large scale integrated circuit semiconductor chips and products containing same by reason of... existence of a domestic industry. The Commission's notice of investigation named several respondents...

  11. Semiconductor Manufacturing Comes to Virginia: Developing Partnerships for Workforce Education and Training.

    ERIC Educational Resources Information Center

    Cantor, Jeffrey A.

    1998-01-01

    In Virginia, a community college consortium for semiconductor education and training programs works with a semiconductor manufacturers' partnership to review programs based on a national core curriculum model. The results are being used to improve curriculum development, faculty training, facility improvement, and student recruitment. (SK)

  12. 77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-01

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-840] Certain Semiconductor Integrated Circuit... States after importation of certain semiconductor integrated circuit devices and products containing same... No. 6,847,904 (``the '904 patent''). The complaint further alleges that an industry in the United...

  13. 77 FR 37900 - Agency Information Collection Activities; Submission to OMB for Review and Approval; Comment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-25

    ... Activities; Submission to OMB for Review and Approval; Comment Request; NESHAP for Semiconductor...: NESHAP for Semiconductor Manufacturing (Renewal). ICR Numbers: EPA ICR Number 2042.05, OMB Control Number... the owners or operators of semiconductor manufacturing plants. Estimated Number of Respondents: 1...

  14. Review of the Semiconductor Industry and Technology Roadmap.

    ERIC Educational Resources Information Center

    Kumar, Sameer; Krenner, Nicole

    2002-01-01

    Points out that the semiconductor industry is extremely competitive and requires ongoing technological advances to improve performance while reducing costs to remain competitive and how essential it is to gain an understanding of important facets of the industry. Provides an overview of the initial and current semiconductor technology roadmap that…

  15. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  16. New organic semiconductors with imide/amide-containing molecular systems.

    PubMed

    Liu, Zitong; Zhang, Guanxin; Cai, Zhengxu; Chen, Xin; Luo, Hewei; Li, Yonghai; Wang, Jianguo; Zhang, Deqing

    2014-10-29

    Due to their high electron affinities, chemical and thermal stabilities, π-conjugated molecules with imide/amide frameworks have received considerable attentions as promising candidates for high-performance optoelectronic materials, particularly for organic semiconductors with high carrier mobilities. The purpose of this Research News is to give an overview of recent advances in development of high performance imide/amide based organic semiconductors for field-effect transistors. It covers naphthalene diimide-, perylene diimide- and amide-based conjugated molecules and polymers for organic semiconductors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Mixed ternary heterojunction solar cell

    DOEpatents

    Chen, Wen S.; Stewart, John M.

    1992-08-25

    A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

  18. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  19. X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor)

    2017-01-01

    An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

  20. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    NASA Astrophysics Data System (ADS)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  1. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  2. Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

    PubMed

    Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

    2018-05-09

    Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

  3. The practice of problem-based investigative teaching reform in semiconductor physics course

    NASA Astrophysics Data System (ADS)

    Chen, Aiping; Wu, Gaojian; Gu, Dawei; Jiang, Hongying; Wang, Lei

    2017-08-01

    Semiconductor physics is an important basic course for the students of the majors of applied physics, optoelectronics, and microelectronics. The authors have been carrying out investigative-teaching reform in semiconductor physics teaching. Firstly, the teaching content was re-structured based on scientific problems. Secondly, the students were placed in groups to discuss different scientific problems and to present a few short science-reports. Thirdly, micro-lesson videos were produced for the students to study and analyze before or after class. With comparative analysis, we find out that the semiconductor-physics curriculum content was greatly enriched. In addition, the students' learning motivation and scientific thinking ability increased, and their innovation ability was improved. Overall, the teaching quality of the semiconductor physics course could be significantly improved.

  4. Operation and biasing for single device equivalent to CMOS

    DOEpatents

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  5. Isolated molecular dopants in pentacene observed by scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Ha, Sieu D.; Kahn, Antoine

    2009-11-01

    Doping is essential to the control of electronic structure and conductivity of semiconductor materials. Whereas doping of inorganic semiconductors is well established, doping of organic molecular semiconductors is still relatively poorly understood. Using scanning tunneling microscopy, we investigate, at the molecular scale, surface and subsurface tetrafluoro-tetracyanoquinodimethane p -dopants in the prototypical molecular semiconductor pentacene. Surface dopants diffuse to pentacene vacancies and appear as negatively charged centers, consistent with the standard picture of an ionized acceptor. Subsurface dopants, however, have the effect of a positive charge, evidence that the donated hole is localized by the parent acceptor counterion, in contrast to the model of doping in inorganic semiconductors. Scanning tunneling spectroscopy shows that the electron potential energy is locally lowered near a subsurface dopant feature, in agreement with the localized hole model.

  6. Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

    PubMed

    Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

    2017-02-01

    Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. High performance thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

    1997-01-01

    Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

  8. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

    2018-06-01

    Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

  9. GaN/NbN epitaxial semiconductor/superconductor heterostructures.

    PubMed

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D Scott; Nepal, Neeraj; Downey, Brian P; Muller, David A; Xing, Huili G; Meyer, David J; Jena, Debdeep

    2018-03-07

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  10. Theory of raman scattering from molecules adsorbed at semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Ueba, H.

    1983-09-01

    A theory is presented to calculate the Raman polarizability of an adsorbed molecule at a semiconductor surface, where the electronic excitation in the molecular site interacts with excitons (elementary excitations in the semiconductor) through non-radiative energy transfer between them, in an intermediate state in the Raman scattering process. The Raman polarizability thus calculated is found to exhibit a peak at the energy corresponding to a resonant excitation of excitons, thereby suggesting the possibility of surface enhanced Raman scattering on semiconductor surfaces. The mechanism studied here can also give an explanation of a recent observation of the Raman excitation profiles of p-NDMA and p-DMAAB adsorbed on ZnO or TiO 2, where those profiles were best described by assuming a resonant intermediate state of the exciton transition in the semiconductors. It is also demonstrated that in addition to vibrational Raman scattering, excitonic Raman scattering of adsorbed molecules will occur in the coupled molecule-semiconductor system, where the molecular returns to its ground electronic state by leaving an exciton in the semiconductor. A spectrum of the excitonic Raman scattering is expected to appear in the background of the vibrational Raman band and to be characterized by the electronic structure of excitons. A desirable experiment is suggested for an examination of the theory.

  11. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOEpatents

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  12. Assembly of mesoscale helices with near-unity enantiomeric excess and light-matter interactions for chiral semiconductors.

    PubMed

    Feng, Wenchun; Kim, Ji-Young; Wang, Xinzhi; Calcaterra, Heather A; Qu, Zhibei; Meshi, Louisa; Kotov, Nicholas A

    2017-03-01

    Semiconductors with chiral geometries at the nanoscale and mesoscale provide a rich materials platform for polarization optics, photocatalysis, and biomimetics. Unlike metallic and organic optical materials, the relationship between the geometry of chiral semiconductors and their chiroptical properties remains, however, vague. Homochiral ensembles of semiconductor helices with defined geometries open the road to understanding complex relationships between geometrical parameters and chiroptical properties of semiconductor materials. We show that semiconductor helices can be prepared with an absolute yield of ca 0.1% and an enantiomeric excess (e.e.) of 98% or above from cysteine-stabilized cadmium telluride nanoparticles (CdTe NPs) dispersed in methanol. This high e.e. for a spontaneously occurring chemical process is attributed to chiral self-sorting based on the thermodynamic preference of NPs to assemble with those of the same handedness. The dispersions of homochiral self-assembled helices display broadband visible and near-infrared (Vis-NIR) polarization rotation with anisotropy ( g ) factors approaching 0.01. Calculated circular dichroism (CD) spectra accurately reproduced experimental CD spectra and gave experimentally validated spectral predictions for different geometrical parameters enabling de novo design of chiroptical semiconductor materials. Unlike metallic, ceramic, and polymeric helices that serve predominantly as scatterers, chiroptical properties of semiconductor helices have nearly equal contribution of light absorption and scattering, which is essential for device-oriented, field-driven light modulation. Deconstruction of a helix into a series of nanorods provides a simple model for the light-matter interaction and chiroptical activity of helices. This study creates a framework for further development of polarization-based optics toward biomedical applications, telecommunications, and hyperspectral imaging.

  13. Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

    DTIC Science & Technology

    2013-01-01

    resonant modulation of semiconductor lasers beyond relaxation oscillation frequency,” Appl. Phys. Lett., 63, 1459–1461 (1993). [26] J. Helms and K. Petermann ...5, 4–6 (1993). [28] K. Petermann , “External optical feedback phenomena in semiconductor lasers,” IEEE J. Sel. Top. Quantum Elec- tron., 1, 480–489

  14. 75 FR 9438 - Samsung Austin Semiconductor, LLC, DRAM Fab 1, a Subsidiary of Samsung Electronics Corporation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-02

    ... Semiconductor, LLC, DRAM Fab 1, a Subsidiary of Samsung Electronics Corporation, Including On-Site Leased... Semiconductor, LLC, a subsidiary of Samsung Electronics Corporation, DRAM Fab 1, including on-site leased.... The workers are engaged in activities related to the production of DRAM chips for use in electronics...

  15. Estimation of Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

    NASA Technical Reports Server (NTRS)

    Numata, Kenji; Camp, Jordan

    2012-01-01

    We evaluate mechanical thermal noise in semiconductor lasers, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Our simple model determines an underlying fundamental limit for the frequency noise of free-running semiconductor laser, and provides a framework: where the noise may be potentially reduced with improved design.

  16. Tight-Binding Description of Impurity States in Semiconductors

    ERIC Educational Resources Information Center

    Dominguez-Adame, F.

    2012-01-01

    Introductory textbooks in solid state physics usually present the hydrogenic impurity model to calculate the energy of carriers bound to donors or acceptors in semiconductors. This model treats the pure semiconductor as a homogeneous medium and the impurity is represented as a fixed point charge. This approach is only valid for shallow impurities…

  17. 77 FR 30500 - Foreign-Trade Zones 140 and 78, Applications for Subzone Authority, Dow Corning Corporation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-23

    ... 140 and 78, Applications for Subzone Authority, Dow Corning Corporation, Hemlock Semiconductor Corporation, and Hemlock Semiconductor, L.L.C.; Reopening of Comment Periods The comment periods for the...- 63283, 10/12/2011), at the Hemlock Semiconductor Corporation facility in Hemlock, Michigan (76 FR 63282...

  18. 19 CFR 12.39 - Imported articles involving unfair methods of competition or practices.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... the authorization or consent of the Government. (e) Importations of semiconductor chip products. (1) In accordance with the Semiconductor Chip Protection Act of 1984 (17 U.S.C. 901 et seq.), if the... imported semiconductor chip products which infringe his rights in such mask work, the owner must obtain a...

  19. 77 FR 21082 - Foreign-Trade Zones 140 and 78, Applications for Subzone Authority Dow Corning Corporation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-09

    ... 140 and 78, Applications for Subzone Authority Dow Corning Corporation, Hemlock Semiconductor Corporation, and Hemlock Semiconductor, L.L.C.; Reopening of Rebuttal Periods The rebuttal periods for the...- 63283, 10/12/2011), at the Hemlock Semiconductor Corporation facility in Hemlock, Michigan (76 FR 63282...

  20. 76 FR 81475 - Foreign-Trade Zones 140 and 78 Applications for Subzone Authority Dow Corning Corporation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-28

    ...-Trade Zones 140 and 78 Applications for Subzone Authority Dow Corning Corporation, Hemlock Semiconductor Corporation and Hemlock Semiconductor, L.L.C.; Notice of Public Hearing and Extension of Comment Period A... facility in Midland, Michigan (76 FR 63282-63283, 10/12/2011), the Hemlock Semiconductor Corporation...

  1. 47 CFR 95.667 - CB transmitter power.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... transmitter power. The dissipation rating of all the semiconductors or electron tubes which supply RF power to the antenna terminals of each CB transmitter must not exceed 10 W. For semiconductors, the dissipation... semiconductor. These values may be temperature de-rated by no more than 50 °C. For an electron tube, the...

  2. 47 CFR 95.667 - CB transmitter power.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... transmitter power. The dissipation rating of all the semiconductors or electron tubes which supply RF power to the antenna terminals of each CB transmitter must not exceed 10 W. For semiconductors, the dissipation... semiconductor. These values may be temperature de-rated by no more than 50 °C. For an electron tube, the...

  3. Parallel stitching of 2D materials

    DOE PAGES

    Ling, Xi; Wu, Lijun; Lin, Yuxuan; ...

    2016-01-27

    Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. Lastly, the methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.

  4. 75 FR 20564 - Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-20

    ... DEPARTMENT OF COMMERCE International Trade Administration [C-580-851] Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit for Preliminary Results of Countervailing Duty... access memory semiconductors from the Republic of Korea, covering the period January 1, 2008 through...

  5. Bibliography of Soviet Laser Developments, No. 18, October - December 1974

    DTIC Science & Technology

    1975-04-25

    IIV Lasers, Laser Theory , Laser Biological Effects, Laser Communications, Laser Computer Technology, Holography, Laser Chemical Effects...spectros.copy of laser materials; ultrashort pulse generation; crystal growing; theoretical aspects of advanced lasers; and general laser theory Laser...Semiconductor: Mixed Junction 5 6. Semiconductor: Heterojunction ^ 7. Semiconductor: Theory 8. Nd:Glass B. Liquid Lasers 1

  6. 75 FR 76023 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-07

    ... Certain Semiconductor Chips and Products Containing Same, DN 2771; the Commission is soliciting comments... semiconductor chips and products containing same The complaint names as respondents Freescale Semiconductor, Inc... Microtech (U.S.A.) Corp. of City of Industry, CA; Biostar Microtech International Corp. of Hsin Tien, Taiwan...

  7. 75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-05

    ... Integrated Circuit Semiconductor Chips and Products Containing Same; Notice of Investigation AGENCY: U.S... of certain large scale integrated circuit semiconductor chips and products containing same by reason... alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The...

  8. 75 FR 5804 - In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-04

    ... Semiconductor Integrated Circuits and Products Containing Same; Notice of Commission Determination To Review in... importation of certain semiconductor integrated circuits and products containing same by reason of... that there exists a domestic industry with respect to each of the asserted patents. The complaint named...

  9. Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

    NASA Astrophysics Data System (ADS)

    Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

    2017-10-01

    Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

  10. Designing new classes of high-power, high-brightness VECSELs

    NASA Astrophysics Data System (ADS)

    Moloney, J. V.; Zakharian, A. R.; Hader, J.; Koch, Stephan W.

    2005-10-01

    Optically-pumped vertical external cavity semiconductor lasers offer the exciting possibility of designing kW-class solid state lasers that provide significant advantages over their doped YAG, thin-disk YAG and fiber counterparts. The basic VECSEL/OPSL (optically-pumped semiconductor laser) structure consists of a very thin (approximately 6 micron thick) active mirror consisting of a DBR high-reflectivity stack followed by a multiple quantum well resonant periodic (RPG) structure. An external mirror (reflectivity typically between 94%-98%) provides conventional optical feedback to the active semiconductor mirror chip. The "cold" cavity needs to be designed to take into account the semiconductor sub-cavity resonance shift with temperature and, importantly, the more rapid shift of the semiconductor material gain peak with temperature. Thermal management proves critical in optimizing the device for serious power scaling. We will describe a closed-loop procedure that begins with a design of the semiconductor active epi structure. This feeds into the sub-cavity optimization, optical and thermal transport within the active structure and thermal transport though the various heat sinking elements. Novel schemes for power scaling beyond current record performances will be discussed.

  11. Photo-voltaic power generating means and methods

    DOEpatents

    Kroger, Ferdinand A.; Rod, Robert L.; Panicker, M. P. Ramachandra

    1983-08-23

    A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials. The present invention also provides a method of using three electrodes in order to form the semiconductor compound material on one of these electrodes. Various examples are given for manufacturing different photo-voltaic cells in accordance with the present invention.

  12. Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

    PubMed Central

    Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

    2016-01-01

    Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

  13. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    PubMed

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  14. Astronaut Peggy Whitson Installs SUBSA Experiment

    NASA Technical Reports Server (NTRS)

    2002-01-01

    Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

  15. International Space Station (ISS)

    NASA Image and Video Library

    2002-07-05

    Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

  16. Photo-voltaic power generating means and methods

    DOEpatents

    Kroger, Ferdinand A.; Rod, Robert L.; Panicker, Ramachandra M. P.; Knaster, Mark B.

    1984-01-10

    A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials. The present invention also provides a method of using three electrodes in order to form the semiconductor compound material on one of these electrodes. Various examples are given for manufacturing different photo-voltaic cells in accordance with the present invention.

  17. Ultrafast dynamics of many-body processes and fundamental quantum mechanical phenomena in semiconductors

    PubMed Central

    Chemla, Daniel S.; Shah, Jagdeep

    2000-01-01

    The large dielectric constant and small effective mass in a semiconductor allows a description of its electronic states in terms of envelope wavefunctions whose energy, time, and length scales are mesoscopic, i.e., halfway between those of atomic and those of condensed matter systems. This property makes it possible to demonstrate and investigate many quantum mechanical, many-body, and quantum kinetic phenomena with tabletop experiments that would be nearly impossible in other systems. This, along with the ability to custom-design semiconductor nanostructures, makes semiconductors an ideal laboratory for experimental investigations. We present an overview of some of the most exciting results obtained in semiconductors in recent years using the technique of ultrafast nonlinear optical spectrocopy. These results show that Coulomb correlation plays a major role in semiconductors and makes them behave more like a strongly interacting system than like an atomic system. The results provide insights into the physics of strongly interacting systems that are relevant to other condensed matter systems, but not easily accessible in other materials. PMID:10716981

  18. Time-Resolved Photoluminescence Microscopy for the Analysis of Semiconductor-Based Paint Layers

    PubMed Central

    Mosca, Sara; Gonzalez, Victor; Eveno, Myriam

    2017-01-01

    In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor paints, it is clear that their detection by conventional optical fluorescence imaging and microscopy is limited by the complexity of historical painting materials. Here, we illustrate and prove the capabilities of time-resolved photoluminescence (TRPL) microscopy, equipped with both spectral and lifetime sensitivity at timescales ranging from nanoseconds to hundreds of microseconds, for the analysis of cross-sections of paint layers made of luminescent semiconductor pigments. The method is sensitive to heterogeneities within micro-samples and provides valuable information for the interpretation of the nature of the emissions in samples. A case study is presented on micro samples from a painting by Henri Matisse and serves to demonstrate how TRPL can be used to identify the semiconductor pigments zinc white and cadmium yellow, and to inform future investigations of the degradation of a cadmium yellow paint. PMID:29160862

  19. Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor material

    NASA Astrophysics Data System (ADS)

    Rajput Priti, J.; Patankar, Udayan S.; Koel, Ants; Nitnaware, V. N.

    2018-05-01

    Silicon substance (is also known as Quartz) is an abundant in nature and the electrical properties it exhibits, plays a vital role in developing its usage in the field of semiconductor. More than decades we can say that Silicon has shown desirable signs but at the later parts it has shown some research potential for development of alternative material as semiconductor devices. This need has come to light as we started scaling down in size of the Silicon material and up in speed. This semiconductor material started exhibiting several fundamental physical limits that include the minimum gate oxide thickness and the maximum saturation velocity of carriers which determines the operation frequency. Though the alternative semiconductors provide some answers (such as III-V's for high speed devices) for a path to skirt these problems, there also may be some ways to extend the life of silicon itself. Two paths are used as for alternative semiconductors i.e alternative gate dielectrics and silicon-based heterostructures. The SiC material has some strength properties under different conditions and find out the defects available in the material.

  20. Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace

    NASA Technical Reports Server (NTRS)

    Fiegl, George (Inventor); Torbet, Walter (Inventor)

    1981-01-01

    A replenishment crucible is mounted adjacent the usual drawing crucible, from which a monocrystalline boule is drawn according to the Czochralski method. A siphon tube for molten semiconductor transfer extends from the replenishment crucible to the drawing crucible. Each crucible is enclosed within its own hermetic shell and is provided with its own heater. The siphon tube is initially filled with molten semiconductor by raising the inert atmospheric pressure in the shell surrounding the replenishment crucible above that surrounding the drawing crucible. Thereafter, adjustment of the level of molten semiconductor in the drawing crucible may be achieved by adjusting the level in either crucible, since the siphon tube will establish the same level in both crucibles. For continuous processing, solid semiconductor may be added to and melted in the replenishment crucible during the process of drawing crystals from the drawing crucible. A constant liquid level of melted semiconductor is maintained in the system by an optical monitoring device and any of several electromechanical controls of the rate of replenishment or crucible height.

  1. Cancer mortality among US workers employed in semiconductor wafer fabrication.

    PubMed

    Boice, John D; Marano, Donald E; Munro, Heather M; Chadda, Bandana K; Signorello, Lisa B; Tarone, Robert E; Blot, William J; McLaughlin, Joseph K

    2010-11-01

    To evaluate potential cancer risks in the US semiconductor wafer fabrication industry. A cohort of 100,081 semiconductor workers employed between 1968 and 2002 was studied. Standardized mortality ratios and relative risks (RRs) were estimated. Standardized mortality ratios were similar and significantly low among fabrication and nonfabrication workers for all causes (0.54 and 0.54) and all cancers (0.74 and 0.72). Internal comparisons also showed similar overall cancer risks among fabrication workers (RR = 0.98), including process equipment operators and process equipment service technicians (OP/EST) employed in cleanrooms (RR = 0.97), compared with nonfabrication workers. Nonsignificantly elevated RRs were observed for a few cancer sites among OP/EST workers, but the numbers of deaths were small and there were no trends of increasing risk with duration of employment. Work in the US semiconductor industry, including semiconductor wafer fabrication in cleanrooms, was not associated with increased cancer mortality overall or mortality from any specific form of cancer. However, due to the young average age of this cohort and its associated relatively low numbers of deaths, regular mortality updates of this semiconductor worker cohort are warranted.

  2. Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Deng, Guochu; He, Zhangbin; Muralt, Paul

    2009-04-01

    The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 (CCTO) thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor defect at a level ˜90 meV higher than valence band. Two contact types, metal-semiconductor and metal-insulator-semiconductor junctions, were observed and their barrier heights, and impurity concentrations were theoretically calculated. Accordingly, the Schottky barrier height of metal-semiconductor contact is about 0.8 eV, and the diffusion barrier height of metal-insulator-semiconductor contact is about 0.4-0.7 eV. The defect concentrations of both samples are quite similar, of the magnitude of 1019 cm-3, indicating an inherent feature of high defect concentration.

  3. Nanotube junctions

    DOEpatents

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

    2004-12-28

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  4. Nanotube junctions

    DOEpatents

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon Sheng; Zettl, Alexander Karlwalter

    2003-01-01

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  5. Transparent contacts for stacked compound photovoltaic cells

    DOEpatents

    Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

    2016-11-29

    A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

  6. Thin film heterojunction photovoltaic cells and methods of making the same

    DOEpatents

    Basol, Bulent M.; Tseng, Eric S.; Rod, Robert L.

    1983-06-14

    A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

  7. Conductive layer for biaxially oriented semiconductor film growth

    DOEpatents

    Findikoglu, Alp T.; Matias, Vladimir

    2007-10-30

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  8. The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brudnyi, V. N.; Kolin, N. G.; Smirnov, L. S.

    2007-09-15

    A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (F{sub lim}) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor represents a highly compensated material, in which F{sub lim} is identical to /2, where is the average energy gap between the conduction band and valence band within the entire Brillouin zone of the crystal. The experimental values of F{sub lim}, the calculated values of /2, and the data on the electrical properties of irradiated semiconductors are presented. The chemical trends controllingmore » the variation in the quantity F{sub lim} in groups of semiconductors with the similar types of chemical bonding are analyzed.« less

  9. Apparatus and methods of measuring minority carrier lifetime using a liquid probe

    DOEpatents

    Li, Jian

    2016-04-12

    Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.

  10. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associatedmore » with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?« less

  11. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  12. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOEpatents

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  13. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOEpatents

    Rogers, John A [Champaign, IL; Meitl, Matthew [Raleigh, NC; Sun, Yugang [Naperville, IL; Ko, Heung Cho [Urbana, IL; Carlson, Andrew [Urbana, IL; Choi, Won Mook [Champaign, IL; Stoykovich, Mark [Dover, NH; Jiang, Hanqing [Urbana, IL; Huang, Yonggang [Glencoe, IL; Nuzzo, Ralph G [Champaign, IL; Lee, Keon Jae [Tokyo, JP; Zhu, Zhengtao [Rapid City, SD; Menard, Etienne [Durham, NC; Khang, Dahl-Young [Seoul, KR; Kan, Seong Jun [Daejeon, KR; Ahn, Jong Hyun [Suwon, KR; Kim, Hoon-sik [Champaign, IL

    2012-07-10

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  14. Power electronics cooling apparatus

    DOEpatents

    Sanger, Philip Albert; Lindberg, Frank A.; Garcen, Walter

    2000-01-01

    A semiconductor cooling arrangement wherein a semiconductor is affixed to a thermally and electrically conducting carrier such as by brazing. The coefficient of thermal expansion of the semiconductor and carrier are closely matched to one another so that during operation they will not be overstressed mechanically due to thermal cycling. Electrical connection is made to the semiconductor and carrier, and a porous metal heat exchanger is thermally connected to the carrier. The heat exchanger is positioned within an electrically insulating cooling assembly having cooling oil flowing therethrough. The arrangement is particularly well adapted for the cooling of high power switching elements in a power bridge.

  15. Lattice Dynamical, Elastic and Thermodynamical Properties of III-V Semiconductor AlSb, GaSb and Their Mixed Semiconductor Ga_{1-x}AlxSb

    NASA Astrophysics Data System (ADS)

    Kushwaha, A. K.

    2017-07-01

    A proposed eleven-parameter three-body shell model is used to study the lattice dynamical properties such as phonon dispersion relations along high symmetry directions, phonon density of states, variation of specific heat and Debye characteristic temperature with absolute temperature, elastic constants and related properties for III-V semiconductor AlSb, GaSb and their mixed semiconductor Ga_{1-x}AlxSb having zinc-blende structure. We found an overall good agreement with the available experimental and theoretical results available in the literature.

  16. Fabrication of eco-friendly PNP transistor using RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kumar, B. Santhosh; Harinee, N.; Purvaja, K.; Shanker, N. Praveen; Manikandan, M.; Aparnadevi, N.; Mukilraj, T.; Venkateswaran, C.

    2018-05-01

    An effort has been made to fabricate a thin film transistor using eco-friendly oxide semiconductor materials. Oxide semiconductor materials are cost - effective, thermally and chemically stable with high electron/hole mobility. Copper (II) oxide is a p-type semiconductor and zinc oxide is an n-type semiconductor. A pnp thin film transistor was fabricated using RF magnetron sputtering. The films deposited have been subjected to structural characterization using AFM. I-V characterization of the fabricated device, Ag/CuO/ZnO/CuO/Ag, confirms transistor behaviour. The mechanism of electron/hole transport of the device is discussed below.

  17. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    PubMed

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  18. Fabricating porous silicon carbide

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.

  19. 75 FR 62462 - Additions to the List of Validated End-Users in the People's Republic of China: Hynix...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-12

    ...In this final rule, the Bureau of Industry and Security amends the Export Administration Regulations (EAR) to add three end-users, Hynix Semiconductor (China) Ltd., Hynix Semiconductor (Wuxi) Ltd. and Lam Research Corporation to the list of validated end-users in the People's Republic of China (PRC). With this rule, exports, reexports and transfers (in-country) of certain items to one facility of Hynix Semiconductor (China) Ltd., one facility of Hynix Semiconductor (Wuxi) Ltd. and nine facilities of Lam Research Corporation in the PRC are now authorized under Authorization Validated End-User (VEU).

  20. Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

    PubMed

    Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

    2016-08-02

    Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

  1. Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

    PubMed Central

    Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

    2016-01-01

    Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed. PMID:28773772

  2. FIBER OPTICS. ACOUSTOOPTICS: Amplification of semiconductor laser radiation in the wavelength range 1.24-1.3 μm by stimulated Raman scattering in an optical fiber

    NASA Astrophysics Data System (ADS)

    Belotitskiĭ, V. I.; Kuzin, E. A.; Ovsyannikov, D. V.; Petrov, Mikhail P.

    1990-07-01

    An investigation was made of the influence of weak semiconductor laser radiation on the spectrum of stimulated Raman scattering in a single-mode optical waveguide pumped by a YAG:Nd3+ laser emitting at 1.06 μm. The scattered radiation power increased by a factor exceeding 10 at the semiconductor laser wavelength. A small-signal dynamic gain reached 47 dB. Simultaneous amplification was observed of several modes of multimode semiconductor laser radiation with an intermode spectral interval of 1.3 nm.

  3. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  4. Noise And Charge Transport In Carbon Nanotube Devices

    NASA Astrophysics Data System (ADS)

    Reza, Shahed; Huynh, Quyen T.; Bosman, Gijs; Sippel, Jennifer; Rinzler, Andrew G.

    2005-11-01

    The charge transport and noise properties of three terminal, gated devices containing multiple, single wall, metallic and semiconductor carbon nanotubes have been measured as a function of gate and drain bias at 300K. Using pulsed bias the metallic tubes could be burned sequentially enabling the separation of measured conductance and low frequency excess noise into metallic and semiconductor contributions. The relative low frequency excess noise of the metallic tubes was about a factor 100 lower than that of the semiconductor tubes, whereas the conductance of the metallic tubes was significantly higher (10 to 50 times) than that of the semiconductor tubes.

  5. Electronegativity estimation of electronic polarizabilities of semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Keyan; Xue, Dongfeng, E-mail: dfxue@chem.dlut.edu.cn

    2010-03-15

    On the basis of the viewpoint of structure-property relationship in solid state matters, we proposed some useful relations to quantitatively calculate the electronic polarizabilities of binary and ternary chalcopyrite semiconductors, by using electronegativity and principal quantum number. The calculated electronic polarizabilities are in good agreement with reported values in the literature. Both electronegativity and principal quantum number can effectively reflect the detailed chemical bonding behaviors of constituent atoms in these semiconductors, which determines the magnitude of their electronic polarizabilities. The present work provides a useful guide to compositionally design novel semiconductor materials, and further explore advanced electro-optic devices.

  6. Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor

    NASA Astrophysics Data System (ADS)

    Häusermann, R.; Batlogg, B.

    2011-08-01

    Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO2 and Cytop). We show that it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone or in the dielectric.

  7. On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bondarenko, V. B., E-mail: enter@spbstu.ru; Filimonov, A. V.

    2015-09-15

    Natural irregularities of the electric potential on the surface of a semiconductor under conditions of the partial self-assembly of electrically active defects, i.e., on the formation of donor–acceptor pairs in depletion layers, are studied. The amplitude and character of the spatial distribution of the chaotic potential on the surface of a semiconductor in the cases of localized and delocalized states are determined. The dependence of the amplitude of the chaotic potential on the degree of compensation of the semiconductor is obtained.

  8. Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

    PubMed

    Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

    2010-10-01

    We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

  9. Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn; Xiong, S. J.; Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn

    2016-08-08

    The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.

  10. Room-temperature semiconductor heterostructure refrigeration

    NASA Astrophysics Data System (ADS)

    Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

    2005-07-01

    With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

  11. Gain in three-dimensional metamaterials utilizing semiconductor quantum structures

    NASA Astrophysics Data System (ADS)

    Schwaiger, Stephan; Klingbeil, Matthias; Kerbst, Jochen; Rottler, Andreas; Costa, Ricardo; Koitmäe, Aune; Bröll, Markus; Heyn, Christian; Stark, Yuliya; Heitmann, Detlef; Mendach, Stefan

    2011-10-01

    We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a tightly bent superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show that the transmission through the superlattice can be enhanced by exciting the quantum well optically under both pulsed or continuous wave excitation. This points out that our structures can be used as a starting point for arbitrary three-dimensional metamaterials including gain.

  12. Solid-state-based analog of optomechanics

    DOE PAGES

    Naumann, Nicolas L.; Droenner, Leon; Carmele, Alexander; ...

    2016-09-01

    In this study, we investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction processes, which in the optomechanical case is the radiation pressure coupling and in the semiconductor case the electron–phonon coupling. We discuss bistabilities, lasing, and phonon damping, and recover the same qualitative behaviors for the semiconductor and the optomechanical cases expected for low driving strengths. However, in contrast to the optomechanical case, distinct signatures of higher order processes arise in the semiconductor model.

  13. Electrochemical liquid-liquid-solid (ec-LLS) crystal growth: a low-temperature strategy for covalent semiconductor crystal growth.

    PubMed

    Fahrenkrug, Eli; Maldonado, Stephen

    2015-07-21

    This Account describes a new electrochemical synthetic strategy for direct growth of crystalline covalent group IV and III-V semiconductor materials at or near ambient temperature conditions. This strategy, which we call "electrochemical liquid-liquid-solid" (ec-LLS) crystal growth, marries the semiconductor solvation properties of liquid metal melts with the utility and simplicity of conventional electrodeposition. A low-temperature liquid metal (i.e., Hg, Ga, or alloy thereof) acts simultaneously as the source of electrons for the heterogeneous reduction of oxidized semiconductor precursors dissolved in an electrolyte as well as the solvent for dissolution of the zero-valent semiconductor. Supersaturation of the semiconductor in the liquid metal triggers eventual crystal nucleation and growth. In this way, the liquid electrolyte-liquid metal-solid crystal phase boundary strongly influences crystal growth. As a synthetic strategy, ec-LLS has several intrinsic features that are attractive for preparing covalent semiconductor crystals. First, ec-LLS does not require high temperatures, toxic precursors, or high-energy-density semiconductor reagents. This largely simplifies equipment complexity and expense. In practice, ec-LLS can be performed with only a beaker filled with electrolyte and an electrical circuit capable of supplying a defined current (e.g., a battery in series with a resistor). By this same token, ec-LLS is compatible with thermally and chemically sensitive substrates (e.g., plastics) that cannot be used as deposition substrates in conventional syntheses of covalent semiconductors. Second, ec-LLS affords control over a host of crystal shapes and sizes through simple changes in common experimental parameters. As described in detail herein, large and small semiconductor crystals can be grown both homogeneously within a liquid metal electrode and heterogeneously at the interface of a liquid metal electrode and a seed substrate, depending on the particular details chosen for ec-LLS. Third, the rate of introduction of zero-valent materials into the liquid metal is precisely gated with a high degree of resolution by the applied potential/current. The intent of this Account is to summarize the key elements of ec-LLS identified to date, first contextualizing this method with respect to other semiconductor crystal growth methods and then highlighting some unique capabilities of ec-LLS. Specifically, we detail ec-LLS as a platform to prepare Ge and Si crystals from bulk- (∼1 cm(3)), micro- (∼10(-10) cm(3)), and nano-sized (∼10(-16) cm(3)) liquid metal electrodes in common solvents at low temperature. In addition, we describe our successes in the preparation of more compositionally complex binary covalent III-V semiconductors.

  14. Dye-sensitized solar cells

    DOEpatents

    Skotheim, T.A.

    1980-03-04

    A low-cost dye-sensitized Schottky barrier solar cell is comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent. 3 figs.

  15. Dye-sensitized solar cells

    DOEpatents

    Skotheim, Terje A. [Berkeley, CA

    1980-03-04

    A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

  16. Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

    PubMed

    Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

    2016-06-28

    Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

  17. Dye-sensitized Schottky barrier solar cells

    DOEpatents

    Skotheim, Terje A.

    1978-01-01

    A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

  18. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

    PubMed Central

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  19. Protection of inorganic semiconductors for sustained, efficient photoelectrochemical water oxidation

    DOE PAGES

    Lichterman, Michael F.; Sun, Ke; Hu, Shu; ...

    2015-10-25

    Small-band-gap (E g < 2 eV) semiconductors must be stabilized for use in integrated devices that convert solar energy into the bonding energy of a reduced fuel, specifically H 2 (g) or a reduced-carbon species such as CH 3 OH or CH 4 . To sustainably and scalably complete the fuel cycle, electrons must be liberated through the oxidation of water to O 2 (g). Strongly acidic or strongly alkaline electrolytes are needed to enable efficient and intrinsically safe operation of a full solar-driven water-splitting system. But, under water-oxidation conditions, the small-band-gap semiconductors required for efficient cell operation aremore » unstable, either dissolving or forming insulating surface oxides. Here, we describe herein recent progress in the protection of semiconductor photoanodes under such operational conditions. We specifically describe the properties of two protective overlayers, TiO 2 /Ni and NiO x , both of which have demonstrated the ability to protect otherwise unstable semiconductors for > 100 h of continuous solar-driven water oxidation when in contact with a highly alkaline aqueous electrolyte (1.0 M KOH(aq)). Furthermore, the stabilization of various semiconductor photoanodes is reviewed in the context of the electronic characteristics and a mechanistic analysis of the TiO 2 films, along with a discussion of the optical, catalytic, and electronic nature of NiO x films for stabilization of semiconductor photoanodes for water oxidation.« less

  20. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  1. High efficiency, low cost, thin film silicon solar cell design and method for making

    DOEpatents

    Sopori, Bhushan L.

    2001-01-01

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  2. High efficiency low cost thin film silicon solar cell design and method for making

    DOEpatents

    Sopori, Bhushan L.

    1999-01-01

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  3. Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

    ERIC Educational Resources Information Center

    Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

    2016-01-01

    Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

  4. Energy storage device with large charge separation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Holme, Timothy P.; Prinz, Friedrich B.; Iancu, Andrei T.

    High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

  5. Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

    DTIC Science & Technology

    1990-01-01

    18] L. Bovino , T. Burke, R. Youmans, M. Weiner, and J. Car, r, "Recent Advances in Optically C’ntrolled Bulk Semiconductor Switches," Digest of...Comp. Simul. 5 (3), 175 (1988). [321 M. Weiner, L. Bovino , R. Youmans, and T. Burke, "Modeling of the Optically Conrolled Semiconductor Switch," J

  6. 37 CFR 211.4 - Registration of claims of protection in mask works.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... version of a mask work fixed in an intermediate or final form of any semiconductor chip product. However... registration per work, owners of mask works in final forms of semiconductor chip products that are produced by... commercially exploited: All original mask work elements fixed in a particular form of a semiconductor chip...

  7. Alberi Validates New Theory, Sheds Light on Semiconductors | News | NREL

    Science.gov Websites

    the discovery when they found that light can suppress native defect formation during semiconductor growth. When Alberi and Scarpulla began discussing the concept of how light can affect semiconductor that pieces easily fit together, so are the atoms in the crystal. But when an atom appears in a crystal

  8. 340 Ghz Multipixel Transceiver

    NASA Technical Reports Server (NTRS)

    Chattopadhyay, Goutam (Inventor); Cooper, Ken B. (Inventor); Decrossas, Emmanuel (Inventor); Gill, John J. (Inventor); Jung-Kubiak, Cecile (Inventor); Lee, Choonsup (Inventor); Lin, Robert (Inventor); Mehdi, Imran (Inventor); Peralta, Alejandro (Inventor); Reck, Theodore (Inventor)

    2017-01-01

    A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

  9. DNA/RNA sequencing using a semiconducting nanopore

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fleharty, Mark; Petsev, Dimiter N.; Van Swol, Frank B.

    The present disclosure provides novel apparatus including, though not necessarily limited to, biosensors utilizing semiconductor materials in electrolyte solutions and methods for using the same. The biosensors rely on a unique property wherein a charged body in the electrolyte solution produces a detectable change in the local conductivity of the semiconductor as the body approaches or travels near the semiconductor.

  10. Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    González, I.; Castro, J.; Baldomir, D.

    2002-10-01

    Using an extension of the Nagaev model of phase separation [E. L. Nagaev and A. I. Podel'shchikov, Sov. Phys. JETP, 71, 1108 (1990)] we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both wide-band semiconductors and double-exchange materials are investigated.

  11. Energy storage device with large charge separation

    DOEpatents

    Holme, Timothy P.; Prinz, Friedrich B.; Iancu, Andrei

    2016-04-12

    High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

  12. 75 FR 44283 - In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-28

    ... Random Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of a... importation of certain dynamic random access memory semiconductors and products containing same, including memory modules, by reason of infringement of certain claims of U.S. Patent Nos. 5,480,051; 5,422,309; 5...

  13. Hybrid anode for semiconductor radiation detectors

    DOEpatents

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  14. Educating Tomorrow's Workforce: A Report on the Semiconductor Industry's Commitment to Youth in K-12.

    ERIC Educational Resources Information Center

    Semiconductor Industry Association, San Jose, CA.

    The U.S. semiconductor industry, now the nation's largest manufacturing industry, displays its commitment to training its current workers and educating future workers by supporting educational efforts on the K-12 level. This catalog describes innovative actions by 16 Semiconductor Industry Association companies to improve education at the K-12…

  15. 75 FR 8765 - Self-Regulatory Organizations; NASDAQ OMX PHLX, Inc.; Notice of Filing of Proposed Rule Change To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-25

    ...-growing (yet extremely volatile) semiconductor industry. When investors want information and investment... Number of Components in the PHLX Semiconductor Sector\\SM\\ Known as SOX\\SM\\, on Which Options Are Listed... Commission a proposal to expand the number of components in the PHLX Semiconductor Sector\\SM\\ known as SOX\\SM...

  16. 75 FR 51843 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-23

    ... Integrated Circuit Semiconductor Chips and Products Containing the Same; Notice of Commission Decision Not To... semiconductor chips and products containing same by reason of infringement of certain claims of U.S. Patent Nos. 5,933,364 and 6,834,336. The complaint further alleges the existence of a domestic industry. The...

  17. Thermocouple for heating and cooling of memory metal actuators

    NASA Technical Reports Server (NTRS)

    Wood, Charles (Inventor)

    1988-01-01

    A semiconductor thermocouple unit is provided for heating and cooling memory metal actuators. The semiconductor thermocouple unit is mounted adjacent to a memory metal actuator and has a heat sink attached to it. A flexible thermally conductive element extends between the semiconductor thermocouple and the actuator and serves as a heat transfer medium during heating and cooling operations.

  18. Plasmonic Enhancement Mechanisms in Solar Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Cushing, Scott K.

    Semiconductor photovoltaics (solar-to-electrical) and photocatalysis (solar-to-chemical) requires sunlight to be converted into excited charge carriers with sufficient lifetimes and mobility to drive a current or photoreaction. Thin semiconductor films are necessary to reduce the charge recombination and mobility losses, but thin films also limit light absorption, reducing the solar energy conversion efficiency. Further, in photocatalysis, the band edges of semiconductor must straddle the redox potentials of a photochemical reaction, reducing light absorption to half the solar spectrum in water splitting. Plasmonics transforms metal nanoparticles into antennas with resonances tuneable across the solar spectrum. If energy can be transferred from the plasmon to the semiconductor, light absorption in the semiconductor can be increased in thin films and occur at energies smaller than the band gap. This thesis investigates why, despite this potential, plasmonic solar energy harvesting techniques rarely appear in top performing solar architectures. To accomplish this goal, the possible plasmonic enhancement mechanisms for solar energy conversion were identified, isolated, and optimized by combining systematic sample design with transient absorption spectroscopy, photoelectrochemical and photocatalytic testing, and theoretical development. Specifically, metal semiconductor nanostructures were designed to modulate the plasmon's scattering, hot carrier, and near field interactions as well as remove heating and self-catalysis effects. Transient absorption spectroscopy then revealed how the structure design affected energy and charge carrier transfer between metal and semiconductor. Correlating this data with wavelength-dependent photoconversion efficiencies and theoretical developments regarding metal-semiconductor interactions identified the origin of the plasmonic enhancement. Using this methodology, it has first been proven that three plasmonic enhancement routes are possible: i) increasing light absorption in the semiconductor by light trapping through scattering, ii) transferring hot carriers from metal to semiconductor after light absorption in the metal, and iii) non-radiative excitation of interband transitions in the semiconductor by plasmon-induced resonant energy transfer (PIRET). The effects of the metal on charge transport and carrier recombination were also revealed. Next, it has been shown that the strength and balance of the three enhancement mechanisms is rooted in the plasmon's dephasing time, or how long it takes the collective electron oscillations to stop being collective. The importance of coherent effects in plasmonic enhancement is also shown. Based on these findings, a thermodynamic balance framework has been used to predict the theoretical maximum efficiency of solar energy conversion in plasmonic metal-semiconductor heterojunctions. These calculations have revealed how plasmonics is best used to address the different light absorption problems in semiconductors, and that not taking into account the plasmon's dephasing is the origin of low plasmonic enhancement Finally, to prove these guidelines, each of the three enhancement mechanisms has been translated into optimal device geometries, showing the plasmon's potential for solar energy harvesting. This dissertation identifies the three possible plasmonic enhancement mechanisms for the first time, discovering a new enhancement mechanism (PIRET) in the process. It has also been shown for the first time that the various plasmon-semiconductor interactions could be rooted in the plasmon's dephasing. This has allowed for the first maximum efficiency estimates which have combined all three enhancement mechanisms to be performed, and revealed that changes in the plasmon's dephasing leads to the disparity in reported plasmonic enhancements. These findings are combined to create optimal device design guidelines, which are proven by fabrication of several devices with top efficiencies in plasmonic solar energy conversion. The knowledge obtained will guide the design of efficient photovoltaics and photocatalysts, helping usher in a renewable energy economy and address current needs of climate change.

  19. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton-QD (QW) coupled system is inhibited and polariton bound states are formed within the polaritonic energy gap. A theory is also developed to study the polariton eigenenergy spectrum, polariton effective mass, and polariton spectral density of N identical semiconductor QDs (QWs) or a superlattice (SL) placed inside a III--V semiconductor. A polariton-impurity band lying within the polaritonic energy gap of the III--V semiconductor is predicted when the resonance energies of the QDs (QWs) lie inside the polaritonic energy gap. Hole-like polariton effective mass of the polariton-impurity band is predicted. It is also predicted that the spectral density of the polariton has a Lorentzian shape if the resonance energies of the QDs (QWs) lie outside the polaritonic gap.

  20. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.

  1. Assembly of mesoscale helices with near-unity enantiomeric excess and light-matter interactions for chiral semiconductors

    PubMed Central

    Feng, Wenchun; Kim, Ji-Young; Wang, Xinzhi; Calcaterra, Heather A.; Qu, Zhibei; Meshi, Louisa; Kotov, Nicholas A.

    2017-01-01

    Semiconductors with chiral geometries at the nanoscale and mesoscale provide a rich materials platform for polarization optics, photocatalysis, and biomimetics. Unlike metallic and organic optical materials, the relationship between the geometry of chiral semiconductors and their chiroptical properties remains, however, vague. Homochiral ensembles of semiconductor helices with defined geometries open the road to understanding complex relationships between geometrical parameters and chiroptical properties of semiconductor materials. We show that semiconductor helices can be prepared with an absolute yield of ca 0.1% and an enantiomeric excess (e.e.) of 98% or above from cysteine-stabilized cadmium telluride nanoparticles (CdTe NPs) dispersed in methanol. This high e.e. for a spontaneously occurring chemical process is attributed to chiral self-sorting based on the thermodynamic preference of NPs to assemble with those of the same handedness. The dispersions of homochiral self-assembled helices display broadband visible and near-infrared (Vis-NIR) polarization rotation with anisotropy (g) factors approaching 0.01. Calculated circular dichroism (CD) spectra accurately reproduced experimental CD spectra and gave experimentally validated spectral predictions for different geometrical parameters enabling de novo design of chiroptical semiconductor materials. Unlike metallic, ceramic, and polymeric helices that serve predominantly as scatterers, chiroptical properties of semiconductor helices have nearly equal contribution of light absorption and scattering, which is essential for device-oriented, field-driven light modulation. Deconstruction of a helix into a series of nanorods provides a simple model for the light-matter interaction and chiroptical activity of helices. This study creates a framework for further development of polarization-based optics toward biomedical applications, telecommunications, and hyperspectral imaging. PMID:28275728

  2. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    NASA Astrophysics Data System (ADS)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  3. Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

    PubMed

    Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

    2015-07-08

    Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

  4. Four-terminal circuit element with photonic core

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sampayan, Stephen

    A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less

  5. Technological and organizational diversity and technical advance in the early history of the American semiconductor industry

    NASA Astrophysics Data System (ADS)

    Cohen, W.; Holbrook, D.; Klepper, S.

    1994-06-01

    This study examines the early years of the semiconductor industry and focuses on the roles played by different size firms in technologically innovative processes. A large and diverse pool of firms participated in the growth of the industry. Three related technological areas were chosen for in-depth analysis: integrated circuits, materials technology, and device packaging. Large business producing vacuum tubes dominated the early production of semiconductor devices. As the market for new devices grew during the 1950's, new firms were founded and existing firms from other industries, e.g. aircraft builders and instrument makers, began to pursue semiconductor electronics. Small firms began to cater to the emerging industry by supplying materials and equipment. These firms contributed to the development of certain aspects of one thousand firms that were playing some part in the semiconductor industry.

  6. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  7. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  8. Thin-film solar cell fabricated on a flexible metallic substrate

    DOEpatents

    Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  9. Hybrid organic semiconductor lasers for bio-molecular sensing.

    PubMed

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  10. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    PubMed

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

  11. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  12. Microscopic properties of ionic liquid/organic semiconductor interfaces revealed by molecular dynamics simulations.

    PubMed

    Yokota, Yasuyuki; Miyamoto, Hiroo; Imanishi, Akihito; Takeya, Jun; Inagaki, Kouji; Morikawa, Yoshitada; Fukui, Ken-Ichi

    2018-05-09

    Electric double-layer transistors based on ionic liquid/organic semiconductor interfaces have been extensively studied during the past decade because of their high carrier densities at low operation voltages. Microscopic structures and the dynamics of ionic liquids likely determine the device performance; however, knowledge of these is limited by a lack of appropriate experimental tools. In this study, we investigated ionic liquid/organic semiconductor interfaces using molecular dynamics to reveal the microscopic properties of ionic liquids. The organic semiconductors include pentacene, rubrene, fullerene, and 7,7,8,8-tetracyanoquinodimethane (TCNQ). While ionic liquids close to the substrate always form the specific layered structures, the surface properties of organic semiconductors drastically alter the ionic dynamics. Ionic liquids at the fullerene interface behave as a two-dimensional ionic crystal because of the energy gain derived from the favorable electrostatic interaction on the corrugated periodic substrate.

  13. Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    None

    2010-10-01

    ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with anmore » innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.« less

  14. Methods for neutralizing anthrax or anthrax spores

    DOEpatents

    Sloan, Mark A; Vivekandanda, Jeevalatha; Holwitt, Eric A; Kiel, Johnathan L

    2013-02-26

    The present invention concerns methods, compositions and apparatus for neutralizing bioagents, wherein bioagents comprise biowarfare agents, biohazardous agents, biological agents and/or infectious agents. The methods comprise exposing the bioagent to an organic semiconductor and exposing the bioagent and organic semiconductor to a source of energy. Although any source of energy is contemplated, in some embodiments the energy comprises visible light, ultraviolet, infrared, radiofrequency, microwave, laser radiation, pulsed corona discharge or electron beam radiation. Exemplary organic semiconductors include DAT and DALM. In certain embodiments, the organic semiconductor may be attached to one or more binding moieties, such as an antibody, antibody fragment, or nucleic acid ligand. Preferably, the binding moiety has a binding affinity for one or more bioagents to be neutralized. Other embodiments concern an apparatus comprising an organic semiconductor and an energy source. In preferred embodiments, the methods, compositions and apparatus are used for neutralizing anthrax spores.

  15. Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

    DOEpatents

    Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

    2014-06-24

    The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

  16. Free-electron laser spectroscopy in biology, medicine, and materials science; Proceedings of the Meeting, Los Angeles, CA, Jan. 22, 1993

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schwettman, H.A.

    1993-01-01

    Various papers on FEL spectroscopy in biology, medicine, and materials science are presented. Individual topics addressed include: Vanderbilt University FEL Center, FIR FEL facility at the University of California/Santa Barbara, FEL research facilities and opportunities at Duke, facilities at the Stanford Picosecond FEL Center, FIR nonlinear response of electrons in semiconductor nanostructures, FIR harmonic generation from semiconductor heterostructures, intrinsic response times of double-barrier resonant tunneling diodes at tetrahertz frequencies, semiconductor spectroscopy and ablation processes with the Vanderbilt FEL. Also discussed are: picosecond nonlinear optics in semiconductor quantum wells with the SCA FEL, excitation spectroscopy of thin-film disordered semiconductors, biophysical applicationmore » of FELs, FEL investigation of energy transfer in condensed phase systems, probing protein photochemistry and dynamics with ultrafast infrared spectroscopy, plasma ablation of hard tissues by FEL, FEL irradiation of the cornea.« less

  17. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    DOEpatents

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  18. Piezo-Phototronic Matrix via a Nanowire Array.

    PubMed

    Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

    2017-12-01

    Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    DOEpatents

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  20. Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

    NASA Technical Reports Server (NTRS)

    Numata, K.; Camp, J.

    2011-01-01

    So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

  1. One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

    PubMed Central

    2009-01-01

    The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452

  2. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  3. Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems

    DOEpatents

    Welch, James D.

    2003-09-23

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

  4. Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

    NASA Technical Reports Server (NTRS)

    Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor); Lowenthal, Mark David (Inventor); Shotton, Neil O. (Inventor)

    2014-01-01

    The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

  5. Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

    NASA Technical Reports Server (NTRS)

    Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Blanchard, Richard A. (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor)

    2012-01-01

    The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

  6. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  7. Multifunctional nanocrystals

    DOEpatents

    Klimov, Victor I.; Hollingsworth, Jennifer A.; Crooker, Scott A.; Kim, Hyungrak

    2010-06-22

    Multifunctional nanocomposites are provided including a core of either a magnetic material or an inorganic semiconductor, and, a shell of either a magnetic material or an inorganic semiconductor, wherein the core and the shell are of differing materials, such multifunctional nanocomposites having multifunctional properties including magnetic properties from the magnetic material and optical properties from the inorganic semiconductor material. Various applications of such multifunctional nanocomposites are also provided.

  8. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  9. EUO-Based Multifunctional Heterostructures

    DTIC Science & Technology

    2015-06-06

    magnetoresistance and the metal -insulator transition resistance ratios of doped EuO by interfacing this semiconductor with niobium; the observed effect is...general and may be applied to any metal /semiconductor interface where the semiconductor shows large Zeeman splitting under magnetic field, (2...understanding the changes in electronic structure and Fermi-surface reconstruction that occur as doped EuO progresses through the ferromagnetic metal

  10. Using Polymer Semiconductors and a 3-in-1 Plastic Electronics STEM Education Kit to Engage Students in Hands-On Polymer Inquiry Activities

    ERIC Educational Resources Information Center

    Enlow, Jessica L.; Marin, Dawn M.; Walter, Michael G.

    2017-01-01

    To improve polymer education for 9-12 and undergraduate students, a plastic electronics laboratory kit using polymer semiconductors has been developed. The three-module kit and curriculum use polymer semiconductors to provide hands-on inquiry activities with overlapping themes of electrical conductivity, light emission, and light-harvesting solar…

  11. Insulator Charging in RF MEMS Capacitive Switches

    DTIC Science & Technology

    2005-06-01

    and Simulations,” Journal of Microelectromechanical Systems, 8: 208-217 (June 1999). 5. Neaman , Donald. Semiconductor Physics & Devices. Boston...227-230 (2001). 5. Sze, S.M. Semiconductor Devices: Physics and Technology. New York: Wiley, 1985. 6. Neaman , Donald A. Semiconductor Physics...Radiation Response of Hafnium-Silicate Capacitors,” IEEE Transactions on Nuclear Science, 49: 3191-3196 (December 2002). 3. Neaman , D.A

  12. Concept Maps as Expressions of Teachers' Meaning-Making While Beginning to Teach Semiconductors

    ERIC Educational Resources Information Center

    Rollnick, Marissa; Mundalamo, Fhatuwani; Booth, Shirley

    2013-01-01

    The challenge of teaching new subject matter is a familiar one for most teachers. This paper investigates the content knowledge gains made by seven teachers as they learn to teach the topic of semiconductors through a process of self-study. "Semiconductors" is a new topic in the curriculum which looks at the sub-microscopic properties of…

  13. Semiconductor composition containing iron, dysprosium, and terbium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.

    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  14. Thin Semiconductor/Metal Films For Infrared Devices

    NASA Technical Reports Server (NTRS)

    Lamb, James L.; Nagendra, Channamallappa L.

    1995-01-01

    Spectral responses of absorbers and reflectors tailored. Thin cermet films composites of metals and semiconductors undergoing development for use as broadband infrared reflectors and absorbers. Development extends concepts of semiconductor and dielectric films used as interference filters for infrared light and visible light. Composite films offer advantages over semiconductor films. Addition of metal particles contributes additional thermal conductivity, reducing thermal gradients and associated thermal stresses, with resultant enhancements of thermal stability. Because values of n in composite films made large, same optical effects achieved with lesser thicknesses. By decreasing thicknesses of films, one not only decreases weights but also contributes further to reductions of thermal stresses.

  15. Methods of forming semiconductor devices and devices formed using such methods

    DOEpatents

    Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

    2013-05-21

    Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

  16. Production of 35S for a Liquid Semiconductor Betavoltaic

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Meier, David E.; Garnov, A. Y.; Robertson, J. D.

    2009-10-01

    The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and it is chemically compatible with known liquid semiconductormore » media.« less

  17. Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

    PubMed

    Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

    2016-06-08

    Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

  18. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

    DOEpatents

    Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

    2012-09-04

    In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

  19. Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.

    PubMed

    López-Gejo, Juan; Arranz, Antonio; Navarro, Alvaro; Palacio, Carlos; Muñoz, Elías; Orellana, Guillermo

    2010-02-17

    Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O(2) sensitivity of the new device is comparable to those of other ruthenium-based sensor systems. This achievement paves the way to a new generation of integrable ultracompact microsensors that combine semiconductor emitter-probe assemblies.

  20. Direct conversion semiconductor detectors in positron emission tomography

    NASA Astrophysics Data System (ADS)

    Cates, Joshua W.; Gu, Yi; Levin, Craig S.

    2015-05-01

    Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

  1. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  2. Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

    NASA Astrophysics Data System (ADS)

    Fu, Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Jürgen

    2006-12-01

    FeS polycrystalline thin films were prepared on float glass at 500°C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360to600°C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

  3. Editorial

    NASA Astrophysics Data System (ADS)

    Bruzzi, Mara; Cartiglia, Nicolo; Pace, Emanuele; Talamonti, Cinzia

    2015-10-01

    The 10th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD) was held in Florence, at Dipartimento di Fisica ed Astronomia on October 8-10, 2014. It has been aimed at discussing frontier research activities in several application fields as nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference concern performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), ultra-fast silicon detectors design and manufacturing, high-band gap semiconductor detectors, novel semiconductor-based devices for medical applications, radiation damage issues in semiconductors and related radiation-hardening technologies.

  4. Productivity improvement through industrial engineering in the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Meyersdorf, Doron

    1996-09-01

    Industrial Engineering is fairly new to the semiconductor industry, though the awareness to its importance has increased in recent years. The US semiconductor industry in particular has come to the realization that in order to remain competitive in the global market it must take the lead not only in product development but also in manufacturing. Industrial engineering techniques offer one ofthe most effective strategies for achieving manufacturing excellence. Industrial engineers play an important role in the success of the manufacturing facility. This paper defines the Industrial engineers role in the IC facility, set the visions of excellence in semiconductor manufacturing and highlights 10 roadblocks on the journey towards manufacturing excellence.

  5. Codoped direct-gap semiconductor scintillators

    DOEpatents

    Derenzo, Stephen Edward [Pinole, CA; Bourret-Courchesne, Edith [Berkeley, CA; Weber, Marvin J [Danville, CA; Klintenberg, Mattias K [Berkeley, CA

    2008-07-29

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  6. Codoped direct-gap semiconductor scintillators

    DOEpatents

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  7. Alpha voltaic batteries and methods thereof

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip (Inventor); Scheiman, David (Inventor); Castro, Stephanie (Inventor); Raffaelle, Ryne P. (Inventor); Wilt, David (Inventor); Chubb, Donald (Inventor)

    2011-01-01

    An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

  8. Health and safety executive inspection of U.K. semiconductor manufacturers.

    PubMed

    Watterson, Andrew; LaDou, Joseph

    2003-01-01

    Europe plays a major role in the international semiconductor industry, but has conducted few studies of the occupational health of its workers. An exception is in the United Kingdom, where, in two small studies, the Health and Safety Executive (HSE) evaluated some health effects of semiconductor work. Neither of these studies, largely restricted to Scotland, produced definitive results, and both were misused by industry to assert that they demonstrated no adverse health effect on workers. The results of the studies prompted semiconductor industry inspections recently completed by the HSE that included chip manufacturers in Scotland and other U.K. areas. The results of these inspections are disappointing.

  9. Design and simulation of a semiconductor chip-based visible - NIR spectrometer for Earth observation

    NASA Astrophysics Data System (ADS)

    Coote, J.; Woolliams, E.; Fox, N.; Goodyer, I. D.; Sweeney, S. J.

    2014-03-01

    We present the development of a novel semiconductor chip-based spectrometer for calibration of Earth observation instruments. The chip follows the Solo spectroscopy approach utilising an array of microdisk resonators evanescently coupled to a central waveguide. Each resonator is tuned to select out a specific wavelength from the incoming spectrum, and forms a p-i-n junction in which current is generated when light of the correct wavelength is present. In this paper we discuss important design aspects including the choice of semiconductor material, design of semiconductor quantum well structures for optical absorption, and design and optimisation of the waveguide and resonators.

  10. Graphite based Schottky diodes formed semiconducting substrates

    NASA Astrophysics Data System (ADS)

    Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

    2010-03-01

    We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

  11. Diluted magnetic semiconductors with narrow band gaps

    NASA Astrophysics Data System (ADS)

    Gu, Bo; Maekawa, Sadamichi

    2016-10-01

    We propose a method to realize diluted magnetic semiconductors (DMSs) with p - and n -type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2 , which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn2Sb2 , of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2 , the Tc of which was up to 230 K in a recent experiment.

  12. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  13. Synthesis of Perylene Imide Diones as Platforms for the Development of Pyrazine Based Organic Semiconductors.

    PubMed

    de Echegaray, Paula; Mancheño, María J; Arrechea-Marcos, Iratxe; Juárez, Rafael; López-Espejo, Guzmán; López Navarrete, J Teodomiro; Ramos, María Mar; Seoane, Carlos; Ortiz, Rocío Ponce; Segura, José L

    2016-11-18

    There is a great interest in peryleneimide (PI)-containing compounds given their unique combination of good electron accepting ability, high abosorption in the visible region, and outstanding chemical, thermal, and photochemical stabilities. Thus, herein we report the synthesis of perylene imide derivatives endowed with a 1,2-diketone functionality (PIDs) as efficient intermediates to easily access peryleneimide (PI)-containing organic semiconductors with enhanced absorption cross-section for the design of tunable semiconductor organic materials. Three processable organic molecular semiconductors containing thiophene and terthiophene moieties, PITa, PITb, and PITT, have been prepared from the novel PIDs. The tendency of these semiconductors for molecular aggregation have been investigated by NMR spectroscopy and supported by quantum chemical calculations. 2D NMR experiments and theoretical calculations point to an antiparallel π-stacking interaction as the most stable conformation in the aggregates. Investigation of the optical and electrochemical properties of the materials is also reported and analyzed in combination with DFT calculations. Although the derivatives presented here show modest electron mobilities of ∼10 -4 cm 2 V -1 s -1 , these preliminary studies of their performance in organic field effect transistors (OFETs) indicate the potential of these new building blocks as n-type semiconductors.

  14. Controlled growth of larger heterojunction interface area for organic photosensitive devices

    DOEpatents

    Yang, Fan [Somerset, NJ; Forrest, Stephen R [Ann Arbor, MI

    2009-12-29

    An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

  15. A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices

    NASA Astrophysics Data System (ADS)

    AlQurashi, Ahmed; Selvakumar, C. R.

    2018-06-01

    There had been tremendous growth in the field of Integrated circuits (ICs) in the past fifty years. Scaling laws mandated both lateral and vertical dimensions to be reduced and a steady increase in doping densities. Most of the modern semiconductor devices have invariably heavily doped regions where Fermi-Dirac Integrals are required. Several attempts have been devoted to developing analytical approximations for Fermi-Dirac Integrals since numerical computations of Fermi-Dirac Integrals are difficult to use in semiconductor devices, although there are several highly accurate tabulated functions available. Most of these analytical expressions are not sufficiently suitable to be employed in semiconductor device applications due to their poor accuracy, the requirement of complicated calculations, and difficulties in differentiating and integrating. A new approximation has been developed for the Fermi-Dirac integrals of the order 1/2 by using Prony's method and discussed in this paper. The approximation is accurate enough (Mean Absolute Error (MAE) = 0.38%) and easy enough to be used in semiconductor device equations. The new approximation of Fermi-Dirac Integrals is applied to a more generalized Einstein Relation which is an important relation in semiconductor devices.

  16. Construction of vesicle CdSe nano-semiconductors photocatalysts with improved photocatalytic activity: Enhanced photo induced carriers separation efficiency and mechanism insight.

    PubMed

    Wen, Jiangsu; Ma, Changchang; Huo, Pengwei; Liu, Xinlin; Wei, Maobin; Liu, Yang; Yao, Xin; Ma, Zhongfei; Yan, Yongsheng

    2017-10-01

    Visible-light-driven photocatalysis as a green technology has attracted a lot of attention due to its potential applications in environmental remediation. Vesicle CdSe nano-semiconductor photocatalyst are successfully prepared by a gas template method and characterized by a variety of methods. The vesicle CdSe nano-semiconductors display enhanced photocatalytic performance for the degradation of tetracycline hydrochloride, the photodegradation rate of 78.824% was achieved by vesicle CdSe, which exhibited an increase of 31.779% compared to granular CdSe. Such an exceptional photocatalytic capability can be attributed to the unique structure of the vesicle CdSe nano-semiconductor with enhanced light absorption ability and excellent carrier transport capability. Meanwhile, the large surface area of the vesicle CdSe nano-semiconductor can increase the contact probability between catalyst and target and provide more surface-active centers. The photocatalytic mechanisms are analyzed by active species quenching. It indicates that h + and O 2 - are the main active species which play a major role in catalyzing environmental toxic pollutants. Simultaneously, the vesicle CdSe nano-semiconductor had high efficiency and stability. Copyright © 2017. Published by Elsevier B.V.

  17. Optoelectronics of supported and suspended 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Bolotin, Kirill

    2014-03-01

    Two-dimensional semiconductors, materials such monolayer molybdenum disulfide (MoS2) are characterized by strong spin-orbit and electron-electron interactions. However, both electronic and optoelectronic properties of these materials are dominated by disorder-related scattering. In this talk, we investigate approaches to reduce scattering and explore physical phenomena arising in intrinsic 2D semiconductors. First, we discuss fabrication of pristine suspended monolayer MoS2 and use photocurrent spectroscopy measurements to study excitons in this material. We observe band-edge and van Hove singularity excitons and estimate their binding energies. Furthermore, we study dissociation of these excitons and uncover the mechanism of their contribution to photoresponse of MoS2. Second, we study strain-induced modification of bandstructures of 2D semiconductors. With increasing strain, we find large and controllable band gap reduction of both single- and bi-layer MoS2. We also detect experimental signatures consistent with strain-induced transition from direct to indirect band gap in monolayer MoS2. Finally, we fabricate heterostructures of dissimilar 2D semiconductors and study their photoresponse. For closely spaced 2D semiconductors we detect charge transfer, while for separation larger than 10nm we observe Forster-like energy transfer between excitations in different layers.

  18. Ultimate linewidth reduction of a semiconductor laser frequency-stabilized to a Fabry-Pérot interferometer.

    PubMed

    Bahoura, Messaoud; Clairon, André

    2003-11-01

    We report a theoretical dynamical analysis on effect of semiconductor laser phase noise on the achievable linewidth when locked to a Fabry-Pérot cavity fringe using a modulation-demodulation frequency stabilization technique such as the commonly used Pound-Drever-Hall frequency locking scheme. We show that, in the optical domain, the modulation-demodulation operation produces, in the presence of semiconductor laser phase noise, two kinds of excess noise, which could be much above the shot noise limit, namely, conversion noise (PM-to-AM) and intermodulation noise. We show that, in typical stabilization conditions, the ultimate semiconductor laser linewidth reduction can be severely limited by the intermodulation excess noise. The modulation-demodulation operation produces the undesirable nonlinear intermodulation effect through which the phase noise spectral components of the semiconductor laser, in the vicinity of even multiples of the modulation frequency, are downconverted into the bandpass of the frequency control loop. This adds a spurious signal, at the modulation frequency, to the error signal and limits the performance of the locked semiconductor laser. This effect, reported initially in the microwave domain using the quasistatic approximation, can be considerably reduced by a convenient choice of the modulation frequency.

  19. Funding Proposal for EDISON’20 Conference Buffalo, New York, 07/17 - 07/21, 2017

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bird, Jonathan

    EDISON’20 – The 20th International Conference on Electron Dynamics in Semiconductors, Optoe- lectronics and Nanostructures – was held at the Hyatt Regency Hotel, Buffalo, NY from July 17 – 21, 2017. The technical focus of this conference was on the fundamental physics and applications of nonequilibrium classical and quantum carrier dynamics in semiconductors, optoelectronic de- vices, and nanostructures. This five-day, single-session conference featured a program consisting of some 15 invited talks, given by internationally-renowned academics from the U.S., Europe, and Japan. Their keynote presentations covered topics including: terahertz phenomena in semiconductors; quantum transport in novel two-dimensional semiconductors; topological insulators; mesoscopicmore » phenomena in semiconductors, and; semiconductor spintronics. The invited papers were supplemented by some 30 contributed talks, selected from almost 120 abstracts submitted in response to the conference’s call for papers, and by two poster sessions that each consisted of close to 40 different reports. This critical mass in terms of scientific content ensured a highly vibrant conference, in which leaders in the field had the opportunity to interact closely with early-career scientists.« less

  20. Health risk in the offspring of female semiconductor workers.

    PubMed

    Lin, Ching-Chun; Wang, Jung-Der; Hsieh, Gong-Yih; Chang, Yu-Yin; Chen, Pau-Chung

    2008-09-01

    There are no published studies focusing on adverse birth outcomes or infant mortality in the semiconductor industry. To investigate whether female workers have higher risks of any adverse birth outcome or death from congenital malformation. A total of 27,610 female workers had been employed in eight semiconductor companies in Taiwan between 1980 and 2000. Using the national birth registry, their live born children were identified, and then any deaths under 5 years of age with or without congenital malformations were identified by linking with the national death registry. Periconceptional exposure was defined as the mother having been employed in the semiconductor industry 3 months before and 3 months after conception of the live born infants. A total of 24,223 live births were included. No significant association between adverse birth outcomes or death with congenital malformation and maternal employment in semiconductor industry was found either in the period of 1980-94 or 1995-2000. There is no convincing evidence that female workers employed during the periconceptional period in the semiconductor industry had higher risks of having adverse birth outcomes or death due to congenital malformations. However, prospective research is warranted to confirm these findings.

  1. Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

    NASA Astrophysics Data System (ADS)

    Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

    2018-03-01

    Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

  2. Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors

    NASA Astrophysics Data System (ADS)

    Mascarenhas, Angelo; Fluegel, Brian; Beaton, Dan

    Semiconductor strain engineering has become a critical feature of high-performance electronics due to the significant device performance enhancements it enables. These improvements that emerge from strain induced modifications to the electronic band structure necessitate new ultra-sensitive tools for probing strain in semiconductors. Using electronic Raman scattering, we recently showed that it is possible to measure minute amounts of strain in thin semiconductor epilayers. We applied this strain measurement technique to two different semiconductor alloy systems, using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10-4. Comparing our strain sensitivity and signal strength in AlxGa1-xAs with those obtained using the industry-standard technique of phonon Raman scattering we found a sensitivity improvement of ×200, and a signal enhancement of 4 ×103 thus obviating key constraints in semiconductor strain metrology. The sensitivity of this approach rivals that of contemporary techniques and opens up a new realm for optically probing strain effects on electronic band structure. We acknowledge the financial support of the DOE Office of Science, BES under DE-AC36-80GO28308.

  3. High efficiency low cost thin film silicon solar cell design and method for making

    DOEpatents

    Sopori, B.L.

    1999-04-27

    A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

  4. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  5. Imaging the motion of electrons in 2D semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Dani, Keshav

    Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

  6. Imaging the motion of electrons across semiconductor heterojunctions.

    PubMed

    Man, Michael K L; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E Laine; Krishna, M Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M; Dani, Keshav M

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure-a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  7. Imaging the motion of electrons across semiconductor heterojunctions

    NASA Astrophysics Data System (ADS)

    Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  8. Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

    NASA Astrophysics Data System (ADS)

    Chosei, Naoya; Itoh, Eiji

    2018-02-01

    We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

  9. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

    NASA Astrophysics Data System (ADS)

    Alivov, Yahya; Funke, Hans; Nagpal, Prashant

    2015-07-01

    Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

  10. Emission factors of air toxics from semiconductor manufacturing in Korea.

    PubMed

    Eom, Yun-Sung; Hong, Ji-Hyung; Lee, Suk-Jo; Lee, Eun-Jung; Cha, Jun-Seok; Lee, Dae-Gyun; Bang, Sun-Ae

    2006-11-01

    The development of local, accurate emission factors is very important for the estimation of reliable national emissions and air quality management. For that, this study is performed for pollutants released to the atmosphere with source-specific emission tests from the semiconductor manufacturing industry. The semiconductor manufacturing industry is one of the major sources of air toxics or hazardous air pollutants (HAPs); thus, understanding the emission characteristics of the emission source is a very important factor in the development of a control strategy. However, in Korea, there is a general lack of information available on air emissions from the semiconductor industry. The major emission sources of air toxics examined from the semiconductor manufacturing industry were wet chemical stations, coating applications, gaseous operations, photolithography, and miscellaneous devices in the wafer fabrication and semiconductor packaging processes. In this study, analyses of emission characteristics, and the estimations of emission data and factors for air toxics, such as acids, bases, heavy metals, and volatile organic compounds from the semiconductor manufacturing process have been performed. The concentration of hydrogen chloride from the packaging process was the highest among all of the processes. In addition, the emission factor of total volatile organic compounds (TVOCs) for the packaging process was higher than that of the wafer fabrication process. Emission factors estimated in this study were compared with those of Taiwan for evaluation, and they were found to be of similar level in the case of TVOCs and fluorine compounds.

  11. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.

    PubMed

    Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert

    2016-03-15

    Today's information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi-Dirac occupation of which ultimately determines the doping efficiency, thus emerges as key challenge. As a first step, the formation of charge transfer complexes is identified as being detrimental to the doping efficiency, which suggests sterically shielding the functional core of dopant molecules as an additional design rule to complement the requirement of low ionization energies or high electron affinities in efficient n-type or p-type dopants, respectively. In an extended outlook, we finally argue that, to fully meet this challenge, an improved understanding is required of just how the admixture of dopant molecules to organic semiconductors does affect the density of states: compared with their inorganic counterparts, traps for charge carriers are omnipresent in organic semiconductors due to structural and chemical imperfections, and Coulomb attraction between ionized dopants and free charge carriers is typically stronger in organic semiconductors owing to their lower dielectric constant. Nevertheless, encouraging progress is being made toward developing a unifying picture that captures the entire range of doping induced phenomena, from ion-pair to complex formation, in both conjugated polymers and molecules. Once completed, such a picture will provide viable guidelines for synthetic and supramolecular chemistry that will enable further technological advances in organic and hybrid organic/inorganic devices.

  12. The Research Laboratory of Electronics Progress Report Number 133, January 1-December 1990

    DTIC Science & Technology

    1990-12-31

    4 6 Chapter 7 High-Frequency InAlAs/InGaAs Metal -Insulator-Doped Semiconductor...Epitaxy of Compound Semiconductors Chapter 7 High-Frequency InAlAs/InGaAs Metal -Insulator- Doped Semiconductor Field-Effect Transistors (MIDFETs) for...aligned silicided NMOS posed of refractory metals to allow a subsequentdevice fabrication. We have used cobalt deposi- high temperature anneal. This

  13. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin [Pullman, WA; Jones, Kelly [Colfax, WA; Ciampi, Guido [Watertown, MA

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  14. Surface breakdown igniter for mercury arc devices

    DOEpatents

    Bayless, John R.

    1977-01-01

    Surface breakdown igniter comprises a semiconductor of medium resistivity which has the arc device cathode as one electrode and has an igniter anode electrode so that when voltage is applied between the electrodes a spark is generated when electrical breakdown occurs over the surface of the semiconductor. The geometry of the igniter anode and cathode electrodes causes the igniter discharge to be forced away from the semiconductor surface.

  15. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  16. Semiconductor Materials for High Frequency Solid State Sources.

    DTIC Science & Technology

    1985-01-18

    saturation on near and submicron-scale device performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or...basis of all FET scaling procedures; and is a major motivating factor for going to submicron structures. This scaling was tested with the 4 following...performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or rejected as candidate device materials based, in

  17. Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

    PubMed Central

    Yu, Chongqi; Wang, Hui

    2010-01-01

    The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures. PMID:22163463

  18. Chemical Defects and Electronics States in Organic Semiconductors

    DTIC Science & Technology

    2008-05-31

    from interacting with organic semiconductor devices. An expt./theoretical study of 0 2 in pentacene indicated that a positive gate voltage can cause...dissociative interaction of02 with pentacene . 1S. SUBJECT TERMS organic semiconductors, PBTIT, P3HT, PQT, polythiophenes, pentacene , defects...investigations of the interaction of02 molecules with pentacene were performed. Based on calculations of formation energies of charged defects a model was

  19. Semiconductor Optical Nonlinearities in the IR

    DTIC Science & Technology

    2007-09-01

    study of the nonlinear properties of semiconductors in the infrared spectral region to develop a fundamental understanding of their optical... infrared countermeasures. 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF 18. NUMBER 19a. NAME OF RESPONSIBLE PERSON a. REPORT b...absorption [I] B. S. Wherrett, "Scaling rules for multiphoton interband absorption in semiconductors", Journal of Optical Society ofAmerica B, 1, 67 (1984) [2

  20. High Current, Multi-Filament Photoconductive Semiconductor Switching

    DTIC Science & Technology

    2011-06-01

    linear PCSS triggered with a 100 fs laser pulse . Figure 1. A generic photoconductive semiconductor switch rapidly discharges a charged capacitor...switching is the most critical challenge remaining for photoconductive semiconductor switch (PCSS) applications in Pulsed Power. Many authors have...isolation and control, pulsed or DC charging, and long device lifetime, provided the current per filament is limited to 20-30A for short pulse (10

  1. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

    NASA Astrophysics Data System (ADS)

    Marmalyuk, A. A.; Ryaboshtan, Yu L.; Gorlachuk, P. V.; Ladugin, M. A.; Padalitsa, A. A.; Slipchenko, S. O.; Lyutetskiy, A. V.; Veselov, D. A.; Pikhtin, N. A.

    2018-03-01

    The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

  2. Efficient semiconductor light-emitting device and method

    DOEpatents

    Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

    1996-01-01

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  3. Efficient semiconductor light-emitting device and method

    DOEpatents

    Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

    1996-02-20

    A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

  4. Variable optical delay using population oscillation and four-wave-mixing in semiconductor optical amplifiers.

    PubMed

    Su, Hui; Kondratko, Piotr; Chuang, Shun L

    2006-05-29

    We investigate variable optical delay of a microwave modulated optical beam in semiconductor optical amplifier/absorber waveguides with population oscillation (PO) and nearly degenerate four-wave-mixing (NDFWM) effects. An optical delay variable between 0 and 160 ps with a 1.0 GHz bandwidth is achieved in an InGaAsP/InP semiconductor optical amplifier (SOA) and shown to be electrically and optically controllable. An analytical model of optical delay is developed and found to agree well with the experimental data. Based on this model, we obtain design criteria to optimize the delay-bandwidth product of the optical delay in semiconductor optical amplifiers and absorbers.

  5. Enhancing surface plasmon leakage at the metal/semiconductor interface: towards increased light outcoupling efficiency in organic optoelectronics.

    PubMed

    Kohl, Jesse; Pantina, Joseph A; O'Carroll, Deirdre M

    2014-04-07

    The light outcoupling efficiency of organic light-emitting optoelectronic devices is severely limited by excitation of tightly bound surface plasmon polaritons at the metal electrodes. We present a theoretical study of an organic semiconductor-silver-SiO(2) waveguide and demonstrate that by simple tuning of metal film thickness and the emission regime of the organic semiconductor, a significant fraction of surface plasmon polariton mode amplitude is leaked into the active semiconductor layer, thereby decreasing the amount of optical energy trapped by the metal. At visible wavelengths, mode leakage increases by factors of up to 3.8 and 88 by tuning metal film thickness and by addition of gain, respectively.

  6. Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

    NASA Technical Reports Server (NTRS)

    Morrison, Andrew D. (Inventor); Daud, Taher (Inventor)

    1986-01-01

    A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

  7. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted basedmore » on time-dependent temperature calculation.« less

  8. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

    DOEpatents

    Compaan, Alvin D.; Price, Kent J.; Ma, Xianda; Makhratchev, Konstantin

    2005-02-08

    A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.

  9. Silicon superlattices: Theory and application to semiconductor devices

    NASA Technical Reports Server (NTRS)

    Moriarty, J. A.

    1981-01-01

    Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

  10. Thiazole-based organic semiconductors for organic electronics.

    PubMed

    Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

    2012-06-19

    Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Thiophene-Based Organic Semiconductors.

    PubMed

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  12. Voltage-matched, monolithic, multi-band-gap devices

    DOEpatents

    Wanlass, Mark W.; Mascarenhas, Angelo

    2006-08-22

    Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

  13. Substrate solder barriers for semiconductor epilayer growth

    DOEpatents

    Drummond, Timothy J.; Ginley, David S.; Zipperian, Thomas E.

    1989-01-01

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  14. Substrate solder barriers for semiconductor epilayer growth

    DOEpatents

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1989-05-09

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  15. Substrate solder barriers for semiconductor epilayer growth

    DOEpatents

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1987-10-23

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

  16. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  17. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    DOE PAGES

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; ...

    2015-07-15

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted basedmore » on time-dependent temperature calculation.« less

  18. Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

    NASA Astrophysics Data System (ADS)

    Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

    2018-03-01

    Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

  19. Temperature control of power semiconductor devices in traction applications

    NASA Astrophysics Data System (ADS)

    Pugachev, A. A.; Strekalov, N. N.

    2017-02-01

    The peculiarity of thermal management of traction frequency converters of a railway rolling stock is highlighted. The topology and the operation principle of the automatic temperature control system of power semiconductor modules of the traction frequency converter are designed and discussed. The features of semiconductors as an object of temperature control are considered; the equivalent circuit of thermal processes in the semiconductors is suggested, the power losses in the two-level voltage source inverters are evaluated and analyzed. The dynamic properties and characteristics of the cooling fan induction motor electric drive with the scalar control are presented. The results of simulation in Matlab are shown for the steady state of thermal processes.

  20. Productivity improvement through industrial engineering in the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Meyersdorf, Doron

    1996-09-01

    Industrial engineering is fairly new to the semiconductor industry, though the awareness to its importance has increased in recent years. The U.S. semiconductor industry in particular has come to the realization that in order to remain competitive in the global market it must take the lead not only in product development but also in manufacturing. Industrial engineering techniques offer one of the most effective strategies for achieving manufacturing excellence. Industrial engineers play an important role in the success of the manufacturing facility. This paper defines the industrial engineers role in the IC facility, sets the visions of excellence in semiconductor manufacturing and highlights 10 roadblocks on the journey towards manufacturing excellence.

  1. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

    2015-03-01

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  2. Voltage-Matched, Monolithic, Multi-Band-Gap Devices

    DOEpatents

    Wanlass, M. W.; Mascarenhas, A.

    2006-08-22

    Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

  3. Wavelength-resonant surface-emitting semiconductor laser

    DOEpatents

    Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

    1989-01-01

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  4. Charge carrier coherence and Hall effect in organic semiconductors

    DOE PAGES

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  5. Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

    NASA Technical Reports Server (NTRS)

    Mishina, H.; Buckley, D. H.

    1984-01-01

    Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

  6. Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji-Won

    The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes duringmore » consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.« less

  7. Electronic characterization of defects in narrow gap semiconductors

    NASA Technical Reports Server (NTRS)

    Patterson, James D.

    1993-01-01

    The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method.

  8. High-frequency high-voltage high-power DC-to-DC converters

    NASA Astrophysics Data System (ADS)

    Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

    1981-07-01

    The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

  9. New materials and structures for photovoltaics

    NASA Astrophysics Data System (ADS)

    Zunger, Alex; Wagner, S.; Petroff, P. M.

    1993-01-01

    Despite the fact that over the years crystal chemists have discovered numerous semiconducting substances, and that modern epitaxial growth techniques are able to produce many novel atomic-scale architectures, current electronic and opto-electronic technologies are based but on a handful of ˜10 traditional semiconductor core materials. This paper surveys a number of yet-unexploited classes of semiconductors, pointing to the much-needed research in screening, growing, and characterizing promising members of these classes. In light of the unmanageably large number of a-priori possibilities, we emphasize the role that structural chemistry and modern computer-aided design must play in screening potentially important candidates. The basic classes of materials discussed here include nontraditional alloys, such as non-isovalent and heterostructural semiconductors, materials at reduced dimensionality, including superlattices, zeolite-caged nanostructures and organic semiconductors, spontaneously ordered alloys, interstitial semiconductors, filled tetrahedral structures, ordered vacancy compounds, and compounds based on d and f electron elements. A collaborative effort among material predictor, material grower, and material characterizer holds the promise for a successful identification of new and exciting systems.

  10. Epitaxy of semiconductor-superconductor nanowires

    NASA Astrophysics Data System (ADS)

    Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

  11. Traditional Semiconductors in the Two-Dimensional Limit.

    PubMed

    Lucking, Michael C; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S B

    2018-02-23

    Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

  12. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

    DOE PAGES

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; ...

    2015-07-22

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe 2 monolayer crystals with SiO 2, and the exposed locations are selectively and totally converted to MoS 2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe 2/MoS 2 heterojunctions in predefinedmore » patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.« less

  13. Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

    PubMed

    He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

    2018-05-30

    Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

  14. Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

    PubMed

    Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

    2017-12-13

    A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

  15. Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

    PubMed Central

    Schlesinger, R.; Bianchi, F.; Blumstengel, S.; Christodoulou, C.; Ovsyannikov, R.; Kobin, B.; Moudgil, K.; Barlow, S.; Hecht, S.; Marder, S.R.; Henneberger, F.; Koch, N.

    2015-01-01

    The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach. PMID:25872919

  16. Multi-harmonic quantum dot optomechanics in fused LiNbO3-(Al)GaAs hybrids

    NASA Astrophysics Data System (ADS)

    Nysten, Emeline D. S.; Huo, Yong Heng; Yu, Hailong; Song, Guo Feng; Rastelli, Armando; Krenner, Hubert J.

    2017-11-01

    We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises of a surface acoustic wave chip made from highly piezoelectric LiNbO3 and a GaAs-based semiconductor membrane with an embedded layer of quantum dots. Employing multi-harmonic transducers, we generated sound waves on LiNbO3 over a wide range of radio frequencies. We monitored their coupling to and propagation across the semiconductor membrane, both in the electrical and optical domain. We demonstrate the enhanced optomechanical tuning of the embedded quantum dots with increasing frequencies. This effect was verified by finite element modelling of our device geometry and attributed to an increased localization of the acoustic field within the semiconductor membrane. For moderately high acoustic frequencies, our simulations predict strong optomechanical coupling, making our hybrid device ideally suited for applications in semiconductor based quantum acoustics.

  17. Processing approach towards the formation of thin-film Cu(In,Ga)Se2

    DOEpatents

    Beck, Markus E.; Noufi, Rommel

    2003-01-01

    A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

  18. Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

    2017-05-01

    Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

  19. Absorption of light dark matter in semiconductors

    DOE PAGES

    Hochberg, Yonit; Lin, Tongyan; Zurek, Kathryn M.

    2017-01-01

    Semiconductors are by now well-established targets for direct detection of MeV to GeV dark matter via scattering off electrons. We show that semiconductor targets can also detect significantly lighter dark matter via an absorption process. When the dark matter mass is above the band gap of the semiconductor (around an eV), absorption proceeds by excitation of an electron into the conduction band. Below the band gap, multiphonon excitations enable absorption of dark matter in the 0.01 eV to eV mass range. Energetic dark matter particles emitted from the sun can also be probed for masses below an eV. We derivemore » the reach for absorption of a relic kinetically mixed dark photon or pseudoscalar in germanium and silicon, and show that existing direct detection results already probe new parameter space. Finally, with only a moderate exposure, low-threshold semiconductor target experiments can exceed current astrophysical and terrestrial constraints on sub-keV bosonic dark matter.« less

  20. A lead-halide perovskite molecular ferroelectric semiconductor

    PubMed Central

    Liao, Wei-Qiang; Zhang, Yi; Hu, Chun-Li; Mao, Jiang-Gao; Ye, Heng-Yun; Li, Peng-Fei; Huang, Songping D.; Xiong, Ren-Gen

    2015-01-01

    Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm−2 and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics. PMID:26021758

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