Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stock, L. V.

1984-01-01

It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.

Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.

PubMed

Shin, Hong-Sik; Oh, Se-Kyung; Kang, Min-Ho; Li, Shi-Guang; Lee, Ga-Won; Lee, Hi-Deok

2011-07-01

In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B18H22) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal--NiSi (YbNi2Si2), whose peaks were confirmed by XRD. The junction leakage current of the p + -n junction with Yb/Ni/TiN and B18H22 implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.

A Pending Major Crisis: An Analysis of the Critical Shortage of US Army Officers in Year Groups 1991-1997

DTIC Science & Technology

2008-12-12

Raymond, Jr., PhD _____________________________________, Member COL(R) David Hunter- Chester Accepted this 12th day of December 2008 by...Ph.D., and COL(R) David Hunter- Chester for their insightful and instructive direction; LTG William B. Caldwell IV, Commanding General of the US...J. McCollum and Dr. Constance A. Lowe, CGSC MMAS seminar instructors, LTC Scott Nester PhD Director, Center for Data Analysis & Statistics, West

Joint Services Electronics Program.

DTIC Science & Technology

1983-08-01

cause excessive outdiffusion from the highlydoped SIPOS layer into the monocrystalline region. A comparison of SIPOS contacted devices annealed for...outdiffusion from the SIPOS into the underlying monocrystalline silicon to form the emitter base junction. This junction should be as shallow as possible to...minimize the bulk recombination in the monocrystalline region yet should present enough of a barrier to reduce the minority carrier population at the

The Northern Bald Eagle (Haliaeetus leucocephalus alascanus).

DTIC Science & Technology

1979-01-01

finally lured out of the nest with a show of food. Kussman (1976, cited in Diss. Abst. Intern. 38(3):1033-D) studied post- fledging behavior of eagles...Frenzel, L. D., G. Juenemann, and J. Kussman 1973 Behavioral Aspects of Eagle Nest Surveys. pp 33-36 in: Bald Eagle Nest Survey Workshop, 15 Aug. U.S...J. Ligas, and W. B. Robertson, Jr. 1970 Organochlorine and Heavy Metal Residues in Bald Eagle Eggs. Pestic. Monit. Jour., 3(3): 136-140. Kussman , J

Influence of design variables on radiation hardness of silicon MINP solar cells

NASA Technical Reports Server (NTRS)

Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

1985-01-01

Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

NASA Astrophysics Data System (ADS)

Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

2004-10-01

Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

Quantitative Evaluation of Ion-implanted Arsenic in Silicon by Instrumental Neutron Activation Analysis

NASA Astrophysics Data System (ADS)

Takatsuka, Toshiko; Hirata, Kouichi; Kobayashi, Yoshinori; Kuroiwa, Takayoshi; Miura, Tsutomu; Matsue, Hideaki

2008-11-01

Certified reference materials (CRMs) of shallow arsenic implants in silicon are now under development at the National Metrology Institute of Japan (NMIJ). The amount of ion-implanted arsenic atoms is quantified by Instrumental Neutron Activation Analysis (INAA) using research reactor JRR-3 in Japan Atomic Energy Agency (JAEA). It is found that this method can evaluate arsenic amounts of 1015 atoms/cm2 with small uncertainties, and is adaptable to shallower dopants. The estimated uncertainties can satisfy the industrial demands for reference materials to calibrate the implanted dose of arsenic at shallow junctions.

Excimer laser annealing: A gold process for CZ silicon junction formation

NASA Technical Reports Server (NTRS)

Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul

1987-01-01

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Monitoring Ion Implantation Energy Using Non-contact Characterization Methods

NASA Astrophysics Data System (ADS)

Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

2011-01-01

State-of-the-art ultra-shallow junctions are produced using extremely low ion implant energies, down to the range of 1-3 keV. This can be achieved by a variety of production techniques; however there is a significant risk that the actual implantation energy differs from the desired value. To detect this, sensitive measurement methods need to be utilized. Experiments show that both Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are suitable for this purpose.

Application of the SEM to the measurement of solar cell parameters

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Andrews, C. W.

1977-01-01

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Studies of silicon PN junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1975-01-01

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

`Orphan' afterglows in the Universal structured jet model for γ-ray bursts

NASA Astrophysics Data System (ADS)

Rossi, Elena M.; Perna, Rosalba; Daigne, Frédéric

2008-10-01

The paucity of reliable achromatic breaks in γ-ray burst afterglow light curves motivates independent measurements of the jet aperture. Serendipitous searches of afterglows, especially at radio wavelengths, have long been the classic alternative. These survey data have been interpreted assuming a uniformly emitting jet with sharp edges (`top-hat' jet), in that case the ratio of weakly relativistically beamed afterglows to GRBs scales with the jet solid angle. In this paper, we consider, instead, a very wide outflow with a luminosity that decreases across the emitting surface. In particular, we adopt the universal structured jet (USJ) model, which is an alternative to the top-hat model for the structure of the jet. However, the interpretation of the survey data is very different: in the USJ model, we only observe the emission within the jet aperture and the observed ratio of prompt emission rate to afterglow rate should solely depend on selection effects. We compute the number and rate of afterglows expected in all-sky snapshot observations as a function of the survey sensitivity. We find that the current (negative) results for OA searches are in agreement with our expectations. In radio and X-ray bands, this was mainly due to the low sensitivity of the surveys, while in the optical band the sky coverage was not sufficient. In general, we find that X-ray surveys are poor tools for OA searches, if the jet is structured. On the other hand, the Faint Images of the Radio Sky at Twenty-cm radio survey and future instruments like the Allen Telescope Array (in the radio band) and especially GAIA, Panoramic Survey Telescope and Rapid Response System and Large Synoptic Survey Telescope (in the optical band) will have chances to detect afterglows.

Overview of processing activities aimed at higher efficiencies and economical production

NASA Technical Reports Server (NTRS)

Bickler, D. B.

1985-01-01

An overview of processing activities aimed at higher efficiencies and economical production were presented. Present focus is on low-cost process technology for higher-efficiency cells of up to 18% or higher. Process development concerns center on the use of less than optimum silicon sheet, the control of production yields, and making uniformly efficient large-area cells. High-efficiency cell factors that require process development are bulk material perfection, very shallow junction formation, front-surface passivation, and finely detailed metallization. Better bulk properties of the silicon sheet and the keeping of those qualities throughout large areas during cell processing are required so that minority carrier lifetimes are maintained and cell performance is not degraded by high doping levels. When very shallow junctions are formed, the process must be sensitive to metallizatin punch-through, series resisitance in the cell, and control of dopant leaching during surface passivation. There is a need to determine the sensitivity to processing by mathematical modeling and experimental activities.

Recoil implantation of boron into silicon by high energy silicon ions

NASA Astrophysics Data System (ADS)

Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

2001-07-01

A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stock, L. V.

1984-01-01

The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

Operation and Applications of the Boron Cathodic Arc Ion Source

NASA Astrophysics Data System (ADS)

Williams, J. M.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.; Freeman, J. H.

2008-11-01

The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.

Method for shallow junction formation

DOEpatents

Weiner, K.H.

1996-10-29

A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

Method for shallow junction formation

DOEpatents

Weiner, Kurt H.

1996-01-01

A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

Inversion layer solar cell fabrication and evaluation. [measurement of response of inversion layer solar cell to light of different wavelengths

NASA Technical Reports Server (NTRS)

Call, R. L.

1973-01-01

Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) applying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

Application of the SEM to the measurement of solar cell parameters

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Andrews, C. W.

1977-01-01

A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Activation of boron and recrystallization in Ge preamorphization implant structure of ultra shallow junctions by microwave annealing

NASA Astrophysics Data System (ADS)

Tsai, Ming Han; Wu, Chi-Ting; Lee, Wen-His

2014-04-01

In this study, high-current and low-energy (400 eV) ion implantation and low-temperature microwave annealing were employed to achieve ultra shallow junctions. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (2400 W; ˜500 °C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a 600 W (˜250 °C) microwave was used to achieve low sheet resistance. The device subjected to two-step microwave annealing at 2400 W for 300 s + 600 W for 600 s has the lowest Vth. It also has the lowest subthreshold swing (SS), which means that it has the highest cap ability to control sub threshold current. In these three devices, the largest Ion/Ioff ratio is 2.203 × 106, and the smallest Ion/Ioff ratio is 2.024 × 106.

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

PubMed

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-04-27

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

PubMed Central

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-01-01

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. PMID:28773440

Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun-Sheng; Moutinho, Helio

2016-11-21

We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm frommore » the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.« less

Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Hugh; Todorov, Stan; Colombeau, Benjamin

2012-11-06

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less

Development of the ion source for cluster implantation

NASA Astrophysics Data System (ADS)

Kulevoy, T. V.; Seleznev, D. N.; Kozlov, A. V.; Kuibeda, R. P.; Kropachev, G. N.; Alexeyenko, O. V.; Dugin, S. N.; Oks, E. M.; Gushenets, V. I.; Hershcovitch, A.; Jonson, B.; Poole, H. J.

2014-02-01

Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.

Total internal reflection optical switch using the reverse breakdown of a pn junction in silicon.

PubMed

Kim, Jong-Hun; Park, Hyo-Hoon

2015-11-01

We demonstrate a new type of silicon total-internal-reflection optical switch with a simple pn junction functioning both as a reflector and a heater. The reflector is placed between asymmetrically y-branched multimode waveguides with an inclination angle corresponding to half of the branch angle. When the reflector is at rest, incident light is reflected in accordance to the refractive index difference due to the plasma dispersion effect of the pre-doped carriers. Switching to the transmission state is attained under a reverse breakdown of the pn junction by the thermo-optic effect which smears the refractive index difference. From this switching scheme, we confirmed the switching operation with a shallow total-internal-reflection region of 1 μm width. At a 6° branch angle, an extinction ratio of 12 dB and an insertion loss of -4.2  dB are achieved along with a thermal heating power of 151.5 mW.

Phosphorus doping a semiconductor particle

DOEpatents

Stevens, G.D.; Reynolds, J.S.

1999-07-20

A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

Phosphorous doping a semiconductor particle

DOEpatents

Stevens, Gary Don; Reynolds, Jeffrey Scott

1999-07-20

A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

Status of silicon solar cell technology

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.

1976-01-01

Major progress in solar cell technology leading to increased efficiency has occurred since 1970. Technical approaches leading to this increased output include surface texturing, improved antireflection coatings, reduced grid pattern area coverage, shallow junctions and back surface fields. The status of these developments and their incorporation into cell production is discussed. Future research and technology trends leading to further efficiency increases and substantial cost reductions are described.

[Chemical and behavioural addiction of medical students. Comparative study in Lebanese students].

PubMed

Moaouad, J; Kazour, F; Haddad, R; Rouhayem, J; Chammai, R; Richa, S

2012-12-01

Evaluate chemical and behavioural dependence of medical students, and compare it to a control group (students in non-medical faculties), in order to underline the harmful effect of university on medical students' dependence. A three-part questionnaire was distributed to a sample of 140 medical students at the Saint-Joseph university of Beirut (USJ), and to 140 students in many other USJ faculties, and filled in anonymously. The first part is about demographic criteria and the second and third parts are respectively about chemical and behavioural dependence, based on DSM IV criteria. There is no statistically significant difference between the two studied populations concerning the dependence on alcohol, cannabis, sedatives, opiates, amphetamines, workaholism, gambling and Internet. However, the prevalence of addiction to caffeine, cocaine, nicotine; sexual addiction, and compulsive buying are significantly lower in medical students when compared to the control group. Men, compared to women, did not show significantly higher levels of dependence on chemical substances. Workaholism is not significantly more prevalent in women. Sexual addiction and compulsive buying are not significantly higher in men. However, pathological gambling and Internet addiction are significantly more prevalent in men. Finally, this study does not show a variation in dependence through the years of medical studies. Most studies show that medical students have high levels of dependence on alcohol, opiates and sedatives. The results of our study show greater dependence on caffeine followed by nicotine, alcohol and sedatives. Medical students in our population did not reveal higher dependence rates compared to other university students. Overall, substance addiction in medical students may be related to the stress of medical studies, and easy access to drugs and prescriptions. These factors may be balanced by perfectionist traits, ethical standards and knowledge of adverse effects seen in medical students resulting in more adjusted prevalence of addiction when compared to other university students. The prevalence of chemical and behavioural dependency of medical students is not higher than the other population. Copyright © 2011 L’Encéphale, Paris. Published by Elsevier Masson SAS. All rights reserved.

Monolithic pattern-sensitive detector

DOEpatents

Berger, Kurt W.

2000-01-01

Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.

1991-01-01

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3 which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.

1991-01-01

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes

NASA Astrophysics Data System (ADS)

Chen, Changping; Wang, Han; Jiang, Zhenyu; Jin, Xiangliang; Luo, Jun

2014-12-01

Two silicon-based ultraviolet (UV) and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor (CMOS) process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same.

2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

NASA Astrophysics Data System (ADS)

Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

2018-02-01

PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.

Local Resistance Profiling of Ultra-Shallow Junction with Spike Lamp and Laser Annealing Using Scanning Spreading Resistance Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abo, Satoshi; Tanaka, Yuji; Nishikawa, Kazuhisa

2008-11-03

Local resistance profiles of ultra-shallow arsenic implanted into silicon with an energy of 3.5 keV and a dose of 1.2x10{sup 15} ions/cm{sup 2} activated by conventional spike lamp and laser annealing were measured by SSRM in a nitrogen atmosphere with a depth resolution of less than 10 nm for investigating the combination of the conventional spike lamp and laser annealing. Spike lamp annealing at 1050 deg. C followed by laser annealing at a power density of 0.42 kW/mm{sup 2} was found to give the lowest sheet resistance. The resistance profiles obtained by SSRM also indicated the lowest resistance for themore » sample after spike lamp annealing at 1050 deg. C followed by laser annealing with a power density of 0.42 kW/mm{sup 2}. Laser annealing alone with a power density of 0.42 kW/mm{sup 2} resulted in the higher sheet resistance, though the shallower resistance profile could be obtained. Spike lamp annealing followed by laser annealing procedures are effective in activating shallow arsenic profiles.« less

The relationship between level of processing and hippocampal-cortical functional connectivity during episodic memory formation in humans.

PubMed

Schott, Björn H; Wüstenberg, Torsten; Wimber, Maria; Fenker, Daniela B; Zierhut, Kathrin C; Seidenbecher, Constanze I; Heinze, Hans-Jochen; Walter, Henrik; Düzel, Emrah; Richardson-Klavehn, Alan

2013-02-01

New episodic memory traces represent a record of the ongoing neocortical processing engaged during memory formation (encoding). Thus, during encoding, deep (semantic) processing typically establishes more distinctive and retrievable memory traces than does shallow (perceptual) processing, as assessed by later episodic memory tests. By contrast, the hippocampus appears to play a processing-independent role in encoding, because hippocampal lesions impair encoding regardless of level of processing. Here, we clarified the neural relationship between processing and encoding by examining hippocampal-cortical connectivity during deep and shallow encoding. Participants studied words during functional magnetic resonance imaging and freely recalled these words after distraction. Deep study processing led to better recall than shallow study processing. For both levels of processing, successful encoding elicited activations of bilateral hippocampus and left prefrontal cortex, and increased functional connectivity between left hippocampus and bilateral medial prefrontal, cingulate and extrastriate cortices. Successful encoding during deep processing was additionally associated with increased functional connectivity between left hippocampus and bilateral ventrolateral prefrontal cortex and right temporoparietal junction. In the shallow encoding condition, on the other hand, pronounced functional connectivity increases were observed between the right hippocampus and the frontoparietal attention network activated during shallow study processing. Our results further specify how the hippocampus coordinates recording of ongoing neocortical activity into long-term memory, and begin to provide a neural explanation for the typical advantage of deep over shallow study processing for later episodic memory. Copyright © 2011 Wiley Periodicals, Inc.

Enhanced blue responses in nanostructured Si solar cells by shallow doping

NASA Astrophysics Data System (ADS)

Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho

2018-03-01

Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.

NMOS contact resistance reduction with selenium implant into NiPt silicide

NASA Astrophysics Data System (ADS)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

The Reduction of TED in Ion Implanted Silicon

NASA Astrophysics Data System (ADS)

Jain, Amitabh

2008-11-01

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.

GaAs and 3-5 compound solar cells status and prospects for use in space

NASA Technical Reports Server (NTRS)

Flood, D. J.; Brinker, D. J.

1984-01-01

Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

A simple model of space radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Stith, J. J.; Stock, L. V.

1983-01-01

A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.

High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

DOE PAGES

Xia, Zhenyang; Zang, Kai; Liu, Dong; ...

2017-08-21

Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less

Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions

NASA Astrophysics Data System (ADS)

Singh, Pooja; Rout, P. K.; Singh, Manju; Rakshit, R. K.; Dogra, Anjana

2015-09-01

We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal-ferroelectric semiconductor junctions. The current (I)-voltage (V) measurements across the junctions comprising of 20-500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (<0.65 eV) below conduction band with increasing thickness. Moreover, the observed hysteresis in I-V curves implies a bipolar resistive switching behaviour, which can be explained in terms of charge trapping and de-trapping process.

Modeling of thin, back-wall silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.

1979-01-01

The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Zhenyang; Zang, Kai; Liu, Dong

Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less

Laser annealing of ion implanted CZ silicon for solar cell junction formation

NASA Technical Reports Server (NTRS)

Katzeff, J. S.

1981-01-01

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Baranov, Artem I.; Gudovskikh, Alexander S.; Kudryashov, Dmitry A.; Lazarenko, Alexandra A.; Morozov, Ivan A.; Mozharov, Alexey M.; Nikitina, Ekaterina V.; Pirogov, Evgeny V.; Sobolev, Maxim S.; Zelentsov, Kirill S.; Egorov, Anton Yu.; Darga, Arouna; Le Gall, Sylvain; Kleider, Jean-Paul

2018-04-01

The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7-12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm-3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm-3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm-3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3-5) × 1015 cm-3, while the concentration of deep levels becomes 1.3 × 1015 cm-3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.

Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping.

PubMed

Alphazan, Thibault; Díaz Álvarez, Adrian; Martin, François; Grampeix, Helen; Enyedi, Virginie; Martinez, Eugénie; Rochat, Névine; Veillerot, Marc; Dewitte, Marc; Nys, Jean-Philippe; Berthe, Maxime; Stiévenard, Didier; Thieuleux, Chloé; Grandidier, Bruno

2017-06-14

Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO 2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10 20 cm -3 . Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.

Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

NASA Astrophysics Data System (ADS)

Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

2017-12-01

With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

Development of high efficiency (14 percent) solar cell array module

NASA Technical Reports Server (NTRS)

Iles, P. A.; Khemthong, S.; Olah, S.; Sampson, W. J.; Ling, K. S.

1980-01-01

Most effort was concentrated on development of procedures to provide large area (3 in. diameter) high efficiency (16.5 percent AM1, 28 C) P+NN+ solar cells. Intensive tests with 3 in. slices gave consistently lower efficiency (13.5 percent). The problems were identified as incomplete formation of and optimum back surface field (BSF), and interaction of the BSF process and the shallow P+ junction. The problem was shown not to be caused by reduced quality of silicon near the edges of the larger slices.

Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

NASA Astrophysics Data System (ADS)

Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin

2011-12-01

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

Remaining Sites Verification Package for the 100-F-44:2, Discovery Pipeline Near 108-F Building, Waste Site Reclassification Form 2007-006

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. M. Capron

2008-05-30

The 100-F-44:2 waste site is a steel pipeline that was discovered in a junction box during confirmatory sampling of the 100-F-26:4 pipeline from December 2004 through January 2005. The 100-F-44:2 pipeline feeds into the 100-F-26:4 subsite vitrified clay pipe (VCP) process sewer pipeline from the 108-F Biology Laboratory at the junction box. In accordance with this evaluation, the confirmatory sampling results support a reclassification of this site to No Action. The current site conditions achieve the remedial action objectives and the corresponding remedial action goals established in the Remaining Sites ROD. The results of confirmatory sampling show that residual contaminantmore » concentrations do not preclude any future uses and allow for unrestricted use of shallow zone soils. The results also demonstrate that residual contaminant concentrations are protective of groundwater and the Columbia River.« less

Aseismic Transform Fault Slip at the Mendocino Triple Junction From Characteristically Repeating Earthquakes

NASA Astrophysics Data System (ADS)

Materna, Kathryn; Taira, Taka'aki; Bürgmann, Roland

2018-01-01

The Mendocino Triple Junction (MTJ), at the northern terminus of the San Andreas Fault system, is an actively deforming plate boundary region with poorly constrained estimates of seismic coupling on most offshore fault surfaces. Characteristically repeating earthquakes provide spatial and temporal descriptions of aseismic creep at the MTJ, including on the oceanic transform Mendocino Fault Zone (MFZ) as it subducts beneath North America. Using a dataset of earthquakes from 2008 to 2017, we find that the easternmost segment of the MFZ displays creep during this period at about 65% of the long-term slip rate. We also find creep at slower rates on the shallower strike-slip interface between the Pacific plate and the North American accretionary wedge, as well as on a fault that accommodates Gorda subplate internal deformation. After a nearby M5.7 earthquake in 2015, we observe a possible decrease in aseismic slip on the near-shore MFZ that lasts from 2015 to at least early 2017.

Development and fabrication of a high current, fast recovery power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Evolution of the Gorda Escarpment, San Andreas fault and Mendocino triple junction from multichannel seismic data collected across the northern Vizcaino block, offshore northern California

USGS Publications Warehouse

Godfrey, N.J.; Meltzer, A.S.; Klemperer, S.L.; Trehu, A.M.; Leitner, B.; Clarke, S.H.; Ondrus, A.

1998-01-01

The Gorda Escarpment is a north facing scarp immediately south of the Mendocino transform fault (the Gorda/Juan de Fuca-Pacific plate boundary) between 126??W and the Mendocino triple junction. It elevates the seafloor at the northern edge of the Vizcaino block, part of the Pacific plate, ??? 1.5 km above the seafloor of the Gorda/Juan de Fuca plate to the north. Stratigraphy interpreted from multichannel seismic data across and close to the Gorda Escarpment suggests that the escarpment is a relatively recent pop-up feature caused by north-south compression across the plate boundary. Close to 126??W. the Vizcaino block acoustic basement shallows and is overlain by sediments that thin north toward the Gorda Escarpment. These sediments are tilted south and truncated at the seafloor. By contrast, in a localized region at the eastern end of the Gorda Escarpment, close to the Mendocino triple junction, the top of acoustic basement dips north and is overlain by a 2-km-thick wedge of pre-11 Ma sedimentary rocks that thickens north, toward the Gorda Escarpment. This wedge of sediments is restricted to the northeast corner of the Vizcaino block. Unless the wedge of sediments was a preexisting feature on the Vizcaino block before it was transferred from the North American to the Pacific plate, the strong spatial correlation between the sedimentary wedge and the triple junction suggests the entire Vizcaino block, with the San Andreas at its eastern boundary, has been part of the Pacific plate since significantly before 11 Ma.

Refining interseismic fault slip and shallow creep on the Hayward and Calaveras Faults, California, using UAVSAR, satellite InSAR and GPS data

NASA Astrophysics Data System (ADS)

Farge, G.; Delbridge, B. G.; Materna, K.; Johnson, C. W.; Chaussard, E.; Jones, C. E.; Burgmann, R.

2016-12-01

Understanding the role of the Hayward/Calaveras fault junction in major earthquake ruptures in the East San Francisco Bay Area is a major challenge in trying to assess the regional seismic hazard. We use updated GPS velocities, and surface geodetic measurements from both traditional space-based InSAR and the NASA JPL's Uninhabited Aerial Vehicle Synthetic Aperture Radar (UAVSAR) system to quantify the deep long-term interseismic deformation and shallow temporally variable fault creep. Here, we present a large data set of interseismic deformation over the Hayward/Calaveras fault system, combining far-field deformation from 1992-2011 ERS and Envisat InSAR data, near-field deformation from 2009-2016 UAVSAR data and 1997-2016 regional GPS measurements from the Bay Area Velocity Unification model (BAVU4) in both near-field and far field. We perform a joint inversion of the data to obtain the long-term slip on deep through-going dislocations and the distribution of shallow creep on a 3D model of the Hayward and Calaveras faults. Spatially adaptative weights are given to each data set in order to account for its importance in constraining slip at different depths. The coherence and resolution of the UAVSAR data allow us to accurately resolve the near-field fault deformation, thus providing stronger constraints on the location of active strands of the southern Hayward and Calaveras faults and their shallow interseismic creep distribution.

Mantle transition zone beneath northeast China from P-receiver function

NASA Astrophysics Data System (ADS)

Zhang, R.; Wu, Q.

2015-12-01

We used receiver functions to examine lateral topographical variations on the 410- and 660-km beneath northeast China and particularly the Kuril-Japan arc junctions. Compared to other receiver functions studies, our analysis was based on greater station coverage of higher density by combining all recent seismic arrays so far deployed in northeast China. Our image shows that the 410-km is featured by a ~10-20 km uplift extending in the NNE direction beneath some areas of the Quaternary basaltic rocks distributed at Abaga and at Wudalianchi. The Clapeyron slope of the olivine phase transiton at 410-km suggests that the uplift is compatible with a negative thermal anomaly. We also confirm a significant depression of the 660 from the Changbai volcanism in the north to Korea in the south along the NW-SE direction. The depression is also accompanied by an uplift of the 660 to the west. The shallow 660-km discontinuity is also particularly detected beneath the Kuril-Japan arc junctions, while it was not detected before. The thermal anomaly at 410 km depth is most likely a remnant of a detached mantle lithosphere that recently sank to depth, thus providing robust evidence for the source and evolution of these basalts. The depression of the 660-km discontinuity may support that the subducting Pacific slab bends sharply and becomes stagnant when it meets strong resistance at a depth of about 670 km. After accumulation to a great extent the stagnant slab finally penetrates into the lower mantle. Combined with the previous triplicated studies, the shallow 660-km may suggest that descending Pacific slab at its leading and junction edges might be accommodated by a tearing near a depth of 660 km. Acknowledgements. Two liner seismic arrays were deployed by the Institute of Geophysics, China Earthquake Administration. The data of the permanent stations were provided by the Data Management Centre of China, National Seismic Network at the Institute of Geophysics, China Earthquake Administration. We thank the NECESSArray project for providing data, which are downloadable from website of IRIS. This research supported by the NSF of China (Grant Nos. 41474089, 90814013 and 40974061).

Low energy implantation of boron with decaborane ions

NASA Astrophysics Data System (ADS)

Albano, Maria Angela

The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

Low resistance contacts for shallow junction semiconductors

NASA Technical Reports Server (NTRS)

Fatemi, Navid S. (Inventor); Weizer, Victor G. (Inventor)

1994-01-01

A method of enhancing the specific contact resistivity in InP semiconductor devices and improved devices produced thereby are disclosed. Low resistivity values are obtained by using gold ohmic contacts that contain small amounts of gallium or indium and by depositing a thin gold phosphide interlayer between the surface of the InP device and the ohmic contact. When both the thin interlayer and the gold-gallium or gold-indium contact metallizations are used, ultra low specific contact resistivities are achieved. Thermal stability with good contact resistivity is achieved by depositing a layer of refractory metal over the gold phosphide interlayer.

Toward an understanding of disequilibrium dihedral angles in mafic rocks

USGS Publications Warehouse

Holness, Marian B.; Humphreys, Madeleine C.S.; Sides, Rachel; Helz, Rosalind T.; Tegner, Christian

2012-01-01

The median dihedral angle at clinopyroxene-plagioclase-plagioclase junctions in mafic rocks, Θcpp, is generally lower than equilibrium (109˚ {plus minus} 2˚). Observation of a wide range of mafic bodies demonstrates that previous work on systematic variations of Θcpp is incorrect in several important respects. Firstly, the spatial distribution of plagioclase compositional zoning demonstrates that the final geometry of three-grain junctions, and hence Θcpp, is formed during solidification (the igneous process): sub-solidus textural modification in most dolerites and gabbros, previously thought to be the dominant control on Θcpp, is insignificant. Θcpp is governed by mass transport constraints, the inhibiting effects of small pore size on crystallization, and variation in relative growth rates of pyroxene and plagioclase. During rapid cooling, pyroxene preferentially fills wider pores while the narrower pores remain melt-filled, resulting in an initial value of Θcpp of 78˚, rather than 60˚ which would be expected if all melt-filled pores were filled with pyroxene. Lower cooling rates create a higher initial Θcpp due to changes in relative growth rates of the two minerals at the nascent three-grain junction. Low Θcpp (associated with cuspate clinopyroxene grains at triple junctions) can also be diagnostic of infiltration of previously melt-free rocks by late-stage evolved liquids (the metasomatic process). Modification of Θcpp by sub-solidus textural equilibration (the metamorphic process) is only important for fine-grained mafic rocks such as chilled margins and intra-plutonic chill zones. In coarse-grained gabbros from shallow crustal intrusions the metamorphic process occurs only in the centres of oikocrysts, associated with rounding of chadacrysts.

Monolithic optical link in silicon-on-insulator CMOS technology.

PubMed

Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan

2017-03-06

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n⁺p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

Study of Etching Pits in a Large-grain Single Cell Bulk Niobium Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xin; Ciovati, Gianluigi; Reece, Charles E.

2009-11-01

Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitativelymore » low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed crystal structure surrounding the pits via crystal phase orientation mapping, while 3D profilometry gave information on the depth and size of the pits. In addition, a survey of the samples by energy dispersive X-ray analysis (EDX) did not show any significant contamination of the samples surface.« less

Flat-plate solar array project process development area process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1985-01-01

Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.

A program continuation to develop processing procedures for advanced silicon solar cells

NASA Technical Reports Server (NTRS)

Avery, J. E.; Scott-Monck, J. A.

1976-01-01

Shallow junctions, aluminum back surface fields and tantalum pentoxide (Ta205) antireflection coatings coupled with the development of a chromium-palladium-silver contact system, were used to produce a 2 x 4 cm wraparound contact silicon solar cell. One thousand cells were successfully fabricated using batch processing techniques. These cells were 0.020 mm thick, with the majority (800) made from nominal ten ohm-cm silicon and the remainder from nominal 30 ohm-cm material. Unfiltered, these cells delivered a minimum AMO efficiency at 25 C of 11.5 percent and successfully passed all the normal in-process and acceptance tests required for space flight cells.

Development of processing procedures for advanced silicon solar cells. [antireflection coatings and short circuit currents

NASA Technical Reports Server (NTRS)

Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.

1975-01-01

Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.

Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

NASA Technical Reports Server (NTRS)

1972-01-01

High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com; Lavoie, Christian; Jordan-Sweet, Jean

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

Shallow V-Shape Nanostructured Pit Arrays in Germanium Using Aqua Regia Electroless Chemical Etching

PubMed Central

Chaabane, Ibtihel; Banerjee, Debika; Touayar, Oualid; Cloutier, Sylvain G.

2017-01-01

Due to its high refractive index, reflectance is often a problem when using Germanium for optoelectronic devices integration. In this work, we propose an effective and low-cost nano-texturing method for considerably reducing the reflectance of bulk Germanium. To do so, uniform V-shape pit arrays are produced by wet electroless chemical etching in a 3:1 volume ratio of highly-concentrated hydrochloridric and nitric acids or so-called aqua regia bath using immersion times ranging from 5 to 60 min. The resulting pit morphology, the crystalline structure of the surface and the changes in surface chemistry after nano-patterning are all investigated. Finally, broadband near-infrared reflectance measurements confirm a significant reduction using this simple wet etching protocol, while maintaining a crystalline, dioxide-free, and hydrogen-passivated surface. It is important to mention that reflectance could be further reduced using deeper pits. However, most optoelectronic applications such as photodetectors and solar cells require relatively shallow patterning of the Germanium to allow formation of a pn-junction close to the surface. PMID:28773215

Theoretical and experimental research in space photovoltaics

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria

1995-01-01

Theoretical and experimental research is outlined for indium phosphide solar cells, other solar cells for space applications, fabrication and performance measurements of shallow homojunction InP solar cells for space applications, improved processing steps and InP material characterization with applications to fabrication of high efficiency radiation resistant InP solar cells and other opto-electronic InP devices, InP solar cells fabricated by thermal diffusion, experiment-based predicted high efficiency solar cells fabricated by closed-ampoule thermal diffusion, radiation resistance of diffused junction InP solar cells, chemical and electrochemical characterization and processing of InP diffused structures and solar cells, and progress in p(+)n InP diffused solar cells.

Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Kuo, Meng-Wei

Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350°C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.

Criteria for Seismic Splay Fault Activation During Subduction Earthquakes

NASA Astrophysics Data System (ADS)

Dedontney, N.; Templeton, E.; Bhat, H.; Dmowska, R.; Rice, J. R.

2008-12-01

As sediment is added to the accretionary prism or removed from the forearc, the material overlying the plate interface must deform to maintain a wedge structure. One of the ways this internal deformation is achieved is by slip on splay faults branching from the main detachment, which are possibly activated as part of a major seismic event. As a rupture propagates updip along the plate interface, it will reach a series of junctions between the shallowly dipping detachment and more steeply dipping splay faults. The amount and distribution of slip on these splay faults and the detachment determines the seafloor deformation and the tsunami waveform. Numerical studies by Kame et al. [JGR, 2003] of fault branching during dynamic slip-weakening rupture in 2D plane strain showed that branch activation depends on the initial stress state, rupture velocity at the branching junction, and branch angle. They found that for a constant initial stress state, with the maximum principal stress at shallow angles to the main fault, branch activation is favored on the compressional side of the fault for a range of branch angles. By extending the part of their work on modeling the branching behavior in the context of subduction zones, where critical taper wedge concepts suggest the angle that the principal stress makes with the main fault is shallow, but not horizontal, we hope to better understand the conditions for splay fault activation and the criteria for significant moment release on the splay. Our aim is to determine the range of initial stresses and relative frictional strengths of the detachment and splay fault that would result in seismic splay fault activation. In aid of that, we conduct similar dynamic rupture analyses to those of Kame et al., but use explicit finite element methods, and take fuller account of overall structure of the zone (rather than focusing just on the branching junction). Critical taper theory requires that the basal fault be weaker than the overlying material, so we build on previous work by incorporating the effect of strength contrasts between the basal and splay faults. The relative weakness of the basal fault is often attributed to high pore pressures, which lowers the effective normal stress and brings the basal fault closer to failure. We vary the initial stress state, while maintaining a constant principal stress orientation, to see how the closeness to failure affects the branching behavior for a variety of branch step-up angles.

Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.

1993-01-01

Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abo, Satoshi; Nishikawa, Kazuhisa; Ushigome, Naoya

2011-01-07

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.0x10{sup 15} and 1.0x10{sup 15} ions/cm{sup 2} activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 deg. C spike lamp annealing followed by 0.35 kW/mm{sup 2} laser annealing was half of that without laser annealing. The lowest local resistance at themore » low resistance region in the arsenic implanted silicon activated by 1050 deg. C spike lamp annealing followed by 0.39 kW/mm{sup 2} laser annealing was 74% lower than that followed by 0.36 kW/mm{sup 2} laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm{sup 2} laser annealing followed by 1050 deg. C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.« less

Inverse models of gravity data from the Red Sea-Aden-East African rifts triple junction zone

NASA Astrophysics Data System (ADS)

Tiberi, Christel; Ebinger, Cynthia; Ballu, Valérie; Stuart, Graham; Oluma, Befekadu

2005-11-01

The combined effects of stretching and magmatism permanently modify crustal structure in continental rifts and volcanic passive margins. The Red Sea-Gulf of Aden-Ethiopian rift triple junction zone provides a unique opportunity to examine incipient volcanic margin formation above or near an asthenospheric upwelling. We use gravity inversions and forward modelling to examine lateral variations in crust and upper mantle structure across the Oligocene flood basalt province, which has subsequently been extended to form the Red Sea, Gulf of Aden and Main Ethiopian rifts. We constrain and test the obtained models with new and existing seismic estimates of crustal thickness. In particular, we predict crustal thickness across the uplifted plateaux and rift valleys, and calibrate our results with recent receiver function analyses. We discuss the results together with a 3-D distribution of density contrasts in terms of magmatic margin structure. The main conclusions are: (1) a denser (+240 kg m-3) and/or a thinner crust (23 km) in the triple junction zone of the Afar depression; (2) a shallower Moho is found along the Main Ethiopian rift axis, with crustal thickness values decreasing from 32-33 km in the south to 24 km beneath the southern Afar depression; (3) thicker crust (~40 km) is present beneath the broad uplifted Oligocene flood basalt province, suggesting that crustal underplating compensates most of the plateau uplift and (4) possible magmatic underplating or a segmentation in the rift structure is observed at ~8°N, 39°W beneath several collapsed caldera complexes. These results indicate that magmatism has profoundly changed crustal structure throughout the flood basalt province.

Multifunctional organic thin films and their electronic/optical properties

NASA Astrophysics Data System (ADS)

Shao, Yan

The concept of multifunctional organic thin films and their electronic/optical properties has been applied to organic functional device design, fabrication, and characterization. The organic devices involve organic light-emitting diodes (OLEDs) and organic photovoltaic devices (OPV) in this dissertation. In the research of graded junction structure of OLEDs, two kinds of naturally-formed graded junction (NFGJ) structures, sharp and shallow graded junctions, can be formed using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. OLEDs with NFGJ have been demonstrated in Chapter 3; the performance is comparable to the heterojunction OLEDs, but with better device lifetime. A novel method to prepare highly uniform mixed organic solid solutions through a high temperature and high-pressure fusion process has been demonstrated in Chapter 4. A series of fused organic solid solution (FOSS) compounds with NPD doped with different organic emitting dopants were prepared and DSC technique was utilized to determine the thermal characteristics. For the first time, the schematic phase diagram for this binary system has been obtained. High performance OLEDs of single color and white emission were fabricated and the device properties were characterized. In Chapter 5, an efficient photovoltaic heterojunction of tetracene and fullerene has been investigated and high performance organic solar cells have been demonstrated by thermal deposition and successive heat treatment. The preliminary conclusion for this enhancement is discussed and supported by atomic force microscopy images, absorption spectra and x-ray diffraction analysis. Additionally, an effective organic photovoltaic heterojunction based on the typical triplet material PtOEP was demonstrated. It is believed that introducing appropriate organic materials with long exciton lifetime is a very promising way to improve photovoltaic performance.

Zero bias thermally stimulated currents in synthetic diamond

NASA Astrophysics Data System (ADS)

Mori, R.; Miglio, S.; Bruzzi, M.; Bogani, F.; De Sio, A.; Pace, E.

2009-06-01

Zero bias thermally stimulated currents (ZBTSCs) have been observed in single crystal high pressure high temperature (HPHT) and polycrystalline chemical vapor deposited (pCVD) diamond films. The ZBTSC technique is characterized by an increased sensitivity with respect to a standard TSC analysis. Due to the absence of the thermally activated background current, new TSC peaks have been observed in both HPHT and pCVD diamond films, related to shallow activation energies usually obscured by the emission of the dominant impurities. The ZBTSC peaks are explained in terms of defect discharge in the nonequilibrium potential distribution created by a nonuniform traps filling at the metal-diamond junctions. The electric field due to the charged defects has been estimated in a quasizero bias TSC experiment by applying an external bias.

Effects of solar cell environment on contact integrity

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.

1993-01-01

The III-V semiconductors react extremely rapidly with most commonly used contact metallizations. This precludes the use of elevated temperatures in the contact formation process for solar cells and other shallow junction devices. These devices must rely upon contact metallizations that are sufficiently conductive in their 'as-fabricated' state. However, while there are a number of non-sintered metallizations that have acceptable characteristics, the lack of a sintering step makes them vulnerable to a variety of environmentally induced degradation processes. The degrading effects resulting from the exposure of unsintered devices to a humid environment and to a vacuum (space) environment are described. It is shown, further, that these effects are magnified by the presence of mechanical damage in the contact metallization. The means to avoid or prevent these degrading interactions are presented.

Stability analysis of Eulerian-Lagrangian methods for the one-dimensional shallow-water equations

USGS Publications Warehouse

Casulli, V.; Cheng, R.T.

1990-01-01

In this paper stability and error analyses are discussed for some finite difference methods when applied to the one-dimensional shallow-water equations. Two finite difference formulations, which are based on a combined Eulerian-Lagrangian approach, are discussed. In the first part of this paper the results of numerical analyses for an explicit Eulerian-Lagrangian method (ELM) have shown that the method is unconditionally stable. This method, which is a generalized fixed grid method of characteristics, covers the Courant-Isaacson-Rees method as a special case. Some artificial viscosity is introduced by this scheme. However, because the method is unconditionally stable, the artificial viscosity can be brought under control either by reducing the spatial increment or by increasing the size of time step. The second part of the paper discusses a class of semi-implicit finite difference methods for the one-dimensional shallow-water equations. This method, when the Eulerian-Lagrangian approach is used for the convective terms, is also unconditionally stable and highly accurate for small space increments or large time steps. The semi-implicit methods seem to be more computationally efficient than the explicit ELM; at each time step a single tridiagonal system of linear equations is solved. The combined explicit and implicit ELM is best used in formulating a solution strategy for solving a network of interconnected channels. The explicit ELM is used at channel junctions for each time step. The semi-implicit method is then applied to the interior points in each channel segment. Following this solution strategy, the channel network problem can be reduced to a set of independent one-dimensional open-channel flow problems. Numerical results support properties given by the stability and error analyses. ?? 1990.

Progressive deformation of the Chugach accretionary complex, Alaska, during a paleogene ridge-trench encounter

USGS Publications Warehouse

Kusky, Timothy M.

1997-01-01

The Mesozoic accretionary wedge of south-central Alaska is cut by an array of faults including dextral and sinistral strike-slip faults, synthetic and antithetic thrust faults, and synthetic and antithetic normal faults. The three fault sets are characterized by quartz ± calcite ± chlorite ± prehnite slickensides, and are all relatively late, i.e. all truncate ductile fabrics of the host rocks. Cross-cutting relationships suggest that the thrust fault sets predate the late normal and strike-slip fault sets. Together, the normal and strike-slip fault system exhibits orthorhombic symmetry. Thrust faulting shortened the wedge subhorizontally perpendicular to strike, and then normal and strike-slip faulting extended the wedge oblique to orogenic strike. Strongly curved slickenlines on some faults of each set reveal that displacement directions changed over time. On dip-slip faults (thrust and normal), slickenlines tend to become steeper with younger increments of slip, whereas on strike-slip faults, slickenlines become shallower with younger strain increments. These patterns may result from progressive exhumation of the accretionary wedge while the faults were active, with the curvature of the slickenlines tracking the change from a non-Andersonian stress field at depth to a more Andersonian system (σ1 or σ2 nearly vertical) at shallower crustal levels.We interpret this complex fault array as a progressive deformation that is one response to Paleocene-Eocene subduction of the Kula-Farallon spreading center beneath the accretionary complex because: (1) on the Kenai Peninsula, ENE-striking dextral faults of this array exhibit mutually cross-cutting relationships with Paleocene-Eocene dikes related to ridge subduction; and (2) mineralized strike-slip and normal faults of the orthorhombic system have yielded 40Ar/39Ar ages identical to near-trench intrusives related to ridge subduction. Both features are diachronous along-strike, having formed at circa 65 Ma in the west and 50 Ma in the east. Exhumation of deeper levels of the southern Alaska accretionary wedge and formation of this late fault array is interpreted as a critical taper adjustment to subduction of progressively younger oceanic lithosphere yielding a shallower basal de´collement dip as the Kula-Farallon ridge approached the accretionary prism. The late structures also record different kinematic regimes associated with subduction of different oceanic plates, before and after ridge subduction. Prior to triple junction passage, subduction of the Farallon plate occurred at nearly right angles to the trench axis, whereas after triple junction migration, subduction of the Kula plate involved a significant component of dextral transpression and northward translation of the Chugach terrane. The changes in kinematics are apparent in the sequence of late structures from: (1) thrusting; (2) near-trench plutonism associated with normal + strike-slip faulting; (3) very late gouge-filled dextral faults.

3-D structure of the crust and uppermost mantle at the junction between the Southeastern Alps and External Dinarides from ambient noise tomography

NASA Astrophysics Data System (ADS)

Guidarelli, Mariangela; Aoudia, Abdelkrim; Costa, Giovanni

2017-12-01

We use ambient noise tomography to investigate the crust and the uppermost mantle structure beneath the junction between the Southern Alps, the Dinarides and the Po Plain. We obtained Rayleigh wave empirical Green's functions from cross-correlation of vertical component seismic recordings for three years (2010-2012) using stations from networks in Italy, Slovenia, Austria, Croatia, Serbia and Switzerland. We measure group and phase velocity dispersion curves from the reconstructed Rayleigh waves in the period range 5-30 and 8-37 s, respectively, and we invert the surface wave velocities for tomographic images on a grid of 0.1° × 0.1°. After the tomography, the group velocities are then inverted to compute the 3-D shear wave velocity model of the crust and the upper mantle beneath the region. Our shear wave velocity model provides the 3-D image of the structure in the region between Northeastern Italy, Slovenia and Austria. The velocity variations at shallow depths correlate with known geological and tectonic domains. We find low velocities below the Po Plain, the northern tip of the Adriatic and the Pannonian Basin, whereas higher velocities characterize the Alpine chain. The vertical cross-sections reveal a clear northward increase of the crustal thickness with a sharp northward dipping of the Moho that coincides at the surface with the leading edge of the Alpine thrust front adjacent to the Friuli Plain in Northeastern Italy. This geometry of the Moho mimics fairly well the shallow north dipping geometry of the decollement inferred from permanent GPS velocity field where high interseismic coupling is reported. From the northern Adriatic domain up to the Idrija right lateral strike-slip fault system beneath Western Slovenia, the crustal thickness is more uniform. Right across Idrija fault, to the northeast, and along its strike, we report a clear change of the physical properties of the crust up to the uppermost mantle as reflected by the lateral distribution of both group and phase velocity anomalies at relevant periods. Idrija fault is therefore interpreted as a subvertical fault sampling the whole crust. Our 3-D velocity model favours crustal thickening with Adria underthrusting the Alps at a shallow angle north of the Friuli Plain where much of the convergence is absorbed and where the destructive 1976 Ms 6.5 thrust Friuli earthquake sequence took place. In Western Slovenia, the deformation is accommodated by strike-slip motion along the Idrija strike-slip fault system where the destructive 1511 Mw 6.9 right lateral strike-slip event occurred.

Natural Gases in Ground Water near Tioga Junction, Tioga County, North-Central Pennsylvania - Occurrence and Use of Isotopes to Determine Origins, 2005

USGS Publications Warehouse

Breen, Kevin J.; Revesz, Kinga; Baldassare, Fred J.; McAuley, Steven D.

2007-01-01

In January 2001, State oil and gas inspectors noted bubbles of natural gas in well water during a complaint investigation near Tioga Junction, Tioga County, north-central Pa. By 2004, the gas occurrence in ground water and accumulation in homes was a safety concern; inspectors were taking action to plug abandoned gas wells and collect gas samples. The origins of the natural-gas problems in ground water were investigated by the U.S. Geological Survey, in cooperation with the Pennsylvania Department of Environmental Protection, in wells throughout an area of about 50 mi2, using compositional and isotopic characteristics of methane and ethane in gas and water wells. This report presents the results for gas-well and water-well samples collected from October 2004 to September 2005. Ground water for rural-domestic supply and other uses near Tioga Junction is from two aquifer systems in and adjacent to the Tioga River valley. An unconsolidated aquifer of outwash sand and gravel of Quaternary age underlies the main river valley and extends into the valleys of tributaries. Fine-grained lacustrine sediments separate shallow and deep water-bearing zones of the outwash. Outwash-aquifer wells are seldom deeper than 100 ft. The river-valley sediments and uplands adjacent to the valley are underlain by a fractured-bedrock aquifer in siliciclastic rocks of Paleozoic age. Most bedrock-aquifer wells produce water from the Lock Haven Formation at depths of 250 ft or less. A review of previous geologic investigations was used to establish the structural framework and identify four plausible origins for natural gas. The Sabinsville Anticline, trending southwest to northeast, is the major structural feature in the Devonian bedrock. The anticline, a structural trap for a reservoir of deep native gas in the Oriskany Sandstone (Devonian) (origin 1) at depths of about 3,900 ft, was explored and tapped by numerous wells from 1930-60. The gas reservoir in the vicinity of Tioga Junction, depleted of native gas, was converted to the Tioga gas-storage field for injection and withdrawal of non-native gases (origin 2). Devonian shale gas (shallow native gas) also has been reported in the area (origin 3). Gas might also originate from microbial degradation of buried organic material in the outwash deposits (origin 4). An inventory of combustible-gas concentrations in headspaces of water samples from 91 wells showed 49 wells had water containing combustible gases at volume fractions of 0.1 percent or more. Well depth was a factor in the observed occurrence of combustible gas for the 62 bedrock wells inventoried. As well-depth range increased from less than 50 ft to 51-150 ft to greater than 151 ft, the percentage of bedrock-aquifer wells with combustible gas increased. Wells with high concentrations of combustible gas occurred in clusters; the largest cluster was near the eastern boundary of the gas-storage field. A subsequent detailed gas-sampling effort focused on 39 water wells with the highest concentrations of combustible gas (12 representing the outwash aquifer and 27 from the bedrock aquifer) and 8 selected gas wells. Three wells producing native gas from the Oriskany Sandstone and five wells (two observation wells and three injection/withdrawal wells) with non-native gas from the gas-storage field were sampled twice. Chemical composition, stable carbon and hydrogen isotopes of methane (13CCH4 and DCH4), and stable carbon isotopes of ethane (13CC2H6) were analyzed. No samples could be collected to document the composition of microbial gas originating in the outwash deposits (outwash or 'drift' gas) or of native natural gas originating solely in Devonian shale at depths shallower than the Oriskany Sandstone, although two of the storage-field observation wells sampled reportedly yielded some Devonian shale gas. Literature values for outwash or 'drift' gas and Devonian shale gases were used to supplement the data collection. Non-native gases fr

Cell–cell communication enhances the capacity of cell ensembles to sense shallow gradients during morphogenesis

PubMed Central

Ellison, David; Mugler, Andrew; Brennan, Matthew D.; Lee, Sung Hoon; Huebner, Robert J.; Shamir, Eliah R.; Woo, Laura A.; Kim, Joseph; Amar, Patrick; Nemenman, Ilya; Ewald, Andrew J.; Levchenko, Andre

2016-01-01

Collective cell responses to exogenous cues depend on cell–cell interactions. In principle, these can result in enhanced sensitivity to weak and noisy stimuli. However, this has not yet been shown experimentally, and little is known about how multicellular signal processing modulates single-cell sensitivity to extracellular signaling inputs, including those guiding complex changes in the tissue form and function. Here we explored whether cell–cell communication can enhance the ability of cell ensembles to sense and respond to weak gradients of chemotactic cues. Using a combination of experiments with mammary epithelial cells and mathematical modeling, we find that multicellular sensing enables detection of and response to shallow epidermal growth factor (EGF) gradients that are undetectable by single cells. However, the advantage of this type of gradient sensing is limited by the noisiness of the signaling relay, necessary to integrate spatially distributed ligand concentration information. We calculate the fundamental sensory limits imposed by this communication noise and combine them with the experimental data to estimate the effective size of multicellular sensory groups involved in gradient sensing. Functional experiments strongly implicated intercellular communication through gap junctions and calcium release from intracellular stores as mediators of collective gradient sensing. The resulting integrative analysis provides a framework for understanding the advantages and limitations of sensory information processing by relays of chemically coupled cells. PMID:26792522

Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, William, E-mail: william.hsu@utexas.edu; Kim, Taegon; Chou, Harry

2016-07-07

Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B{sup +} implantation, the use of the heavier BF{sub 2}{sup +} ions or even BF{sup +} is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B{sup +}, BF{sup +}, and BF{sub 2}{sup +} implants in crystalline and pre-amorphized Ge, employing rapid thermal annealingmore » at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF{sup +}, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p{sup +}/n junctions formed by BF{sup +} implantation was evaluated.« less

Space solar cell technology development - A perspective

NASA Technical Reports Server (NTRS)

Scott-Monck, J.

1982-01-01

The developmental history of photovoltaics is examined as a basis for predicting further advances to the year 2000. Transistor technology was the precursor of solar cell development. Terrestrial cells were modified for space through changes in geometry and size, as well as the use of Ag-Ti contacts and manufacture of a p-type base. The violet cell was produced for Comsat, and involved shallow junctions, new contacts, and an enhanced antireflection coating for better radiation tolerance. The driving force was the desire by private companies to reduce cost and weight for commercial satellite power supplies. Liquid phase epitaxial (LPE) GaAs cells are the latest advancement, having a 4 sq cm area and increased efficiency. GaAs cells are expected to be flight ready in the 1980s. Testing is still necessary to verify production techniques and the resistance to electron and photon damage. Research will continue in CVD cell technology, new panel technology, and ultrathin Si cells.

Thin silicon solar cell performance characteristics

NASA Technical Reports Server (NTRS)

Gay, C. F.

1978-01-01

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

The Boquillas Formation of the Big Bend National Park, Texas, USA, a reference Cenomanian through Santonian (Upper Cretaceous) carbonate succession at the southern end of the Western Interior Seaway

NASA Astrophysics Data System (ADS)

Cooper, Dee Ann; Cooper, Roger W.; Stevens, James B.; Stevens, M. S.; Cobban, William A.; Walaszczyk, Ireneusz

2017-12-01

The upper lower Cenomanian through middle Santonian (Upper Cretaceous) of the Boquillas Formation in the Big Bend Region of Trans-Pecos Texas consists of a marine carbonate succession deposited at the southern end of the Western Interior Seaway. The Boquillas Formation, subdivided into the lower, c. 78 m thick limestone-shale Ernst Member, and the upper, c. 132 m thick limestone/chalk/marl San Vicente Member, was deposited in a shallow shelf open marine environment at the junction between the Western Interior Seaway and the western margins of the Tethys Basin. Biogeographically, the area was closely tied with the southern Western Interior Seaway. The richly fossiliferous upper Turonian, Coniacian and lower Santonian parts of the Boquillas Formation are particularly promising for multistratigraphic studies.

Electron and proton degradation in /AlGa/As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Knechtli, R. C.; Kamath, G. S.; Goldhammer, L.; Anspaugh, B.

1978-01-01

Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.

Nanoscale doping of compound semiconductors by solid phase dopant diffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Jaehyun, E-mail: jaehyun.ahn@utexas.edu; Koh, Donghyi; Roy, Anupam

2016-03-21

Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration ofmore » 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.« less

Silicon solar cell process development, fabrication, and analysis

NASA Technical Reports Server (NTRS)

Yoo, H. I.; Iles, P. A.; Leung, D. C.

1981-01-01

Work has progressed in fabrication and characterization of solar cells from ubiquitous crystallization process (UCP) wafers and LASS ribbons. Gettering tests applied to UCP wafers made little change on their performance compared with corresponding baseline data. Advanced processes such as shallow junction (SJ), back surface field (BSF), and multilayer antireflection (MLAR) were also applied. While BSF by Al paste had shunting problems, cells with SJ and BSF by evaporated Al, and MLAR did achieve 14.1% AMI on UCP silicon. The study of LASS material was very preliminary. Only a few cells with SJ, BSR, (no BSF) and MLAR were completed due to mechanical yield problems after lapping the material. Average efficiency was 10.7% AMI with 13.4% AMI for CZ controls. Relatively high minority carrier diffusion lengths were obtained. The lower than expected Jsc could be partially explained by low active area due to irregular sizes.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua

2015-01-28

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measuredmore » carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.« less

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

NASA Astrophysics Data System (ADS)

Tomita, Toshihiro; Miyaji, Kousuke

2015-04-01

The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration NA and cell program state Vth is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude ΔVth is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since NA is relatively low to suppress junction leakage current. In addition, ΔVth peak at the center of the channel decreases in the higher Vth state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, ΔVth distribution slope λ cannot be determined by only considering RDF and single trap.

A Bayesian rupture model of the 2007 Mw 8.1 Solomon Islands earthquake in Southwest Pacific with coral reef displacement measurements

NASA Astrophysics Data System (ADS)

Chen, Ting; Luo, Haipeng; Furlong, Kevin P.

2017-05-01

On 1st April 2007 a Mw 8.1 megathrust earthquake occurred in the western Solomon Islands of the Southwest Pacific and generated a regional tsunami with run-up heights of up to 12 m. A Bayesian inversion model is constructed to derive fault dip angle and cumulative co-seismic and early post-seismic slip using coral reef displacement measurements, in which both data misfit and moment magnitude are used as constraints. Results show three shallow, high-slip patches concentrated along the trench from west of Ranongga Island to Rendova Island on a fault plane dipping 20°, and a maximum dip slip of 11.6 m beneath Ranongga Island. Considerable subsidence on Simbo Island outboard of the trench on the subducting plate is not well explained with this model, but may be related to the effects of afterslip and/or Simbo Island's location near the triple junction among the Australia, Woodlark and Pacific plates.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

One-dimensional GIS-based model compared with a two-dimensional model in urban floods simulation.

PubMed

Lhomme, J; Bouvier, C; Mignot, E; Paquier, A

2006-01-01

A GIS-based one-dimensional flood simulation model is presented and applied to the centre of the city of Nîmes (Gard, France), for mapping flow depths or velocities in the streets network. The geometry of the one-dimensional elements is derived from the Digital Elevation Model (DEM). The flow is routed from one element to the next using the kinematic wave approximation. At the crossroads, the flows in the downstream branches are computed using a conceptual scheme. This scheme was previously designed to fit Y-shaped pipes junctions, and has been modified here to fit X-shaped crossroads. The results were compared with the results of a two-dimensional hydrodynamic model based on the full shallow water equations. The comparison shows that good agreements can be found in the steepest streets of the study zone, but differences may be important in the other streets. Some reasons that can explain the differences between the two models are given and some research possibilities are proposed.

Potential for larger earthquakes in the East San Francisco Bay Area due to the direct connection between the Hayward and Calaveras Faults

NASA Astrophysics Data System (ADS)

Chaussard, E.; Bürgmann, R.; Fattahi, H.; Nadeau, R. M.; Taira, T.; Johnson, C. W.; Johanson, I.

2015-04-01

The Hayward and Calaveras Faults, two strike-slip faults of the San Andreas System located in the East San Francisco Bay Area, are commonly considered independent structures for seismic hazard assessment. We use Interferometric Synthetic Aperture RADAR to show that surface creep on the Hayward Fault continues 15 km farther south than previously known, revealing new potential for rupture and damage south of Fremont. The extended trace of the Hayward Fault, also illuminated by shallow repeating micro-earthquakes, documents a surface connection with the Calaveras Fault. At depths greater than 3-5 km, repeating micro-earthquakes located 10 km north of the surface connection highlight the 3-D wedge geometry of the junction. Our new model of the Hayward and Calaveras Faults argues that they should be treated as a single system with potential for earthquake ruptures generating events with magnitudes greater than 7, posing a higher seismic hazard to the East San Francisco Bay Area than previously considered.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

PubMed

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

David P. Norton; Stephen Pearton; Fan Ren

2007-09-30

By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg formore » higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.« less

Three-junction solar cell

DOEpatents

Ludowise, Michael J.

1986-01-01

A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

ESD protection design for advanced CMOS

NASA Astrophysics Data System (ADS)

Huang, Jin B.; Wang, Gewen

2001-10-01

ESD effects in integrated circuits have become a major concern as today's technologies shrink to sub-micron/deep- sub-micron dimensions. The thinner gate oxide and shallower junction depth used in the advanced technologies make them very vulnerable to ESD damages. The advanced techniques like silicidation and STI (shallow trench insulation) used for improving other device performances make ESD design even more challenging. For non-silicided technologies, a certain DCGS (drain contact to gate edge spacing) is needed to achieve ESD hardness for nMOS output drivers and nMOS protection transistors. The typical DCGS values are 4-5um and 2-3um for 0.5um and 0.25um CMOS, respectively. The silicidation reduces the ballast resistance provided by DCGS with at least a factor of 10. As a result, scaling of the ESD performance with device width is lost and even zero ESD performance is reported for standard silicided devices. The device level ESD design is focused in this paper, which includes GGNMOS (gate grounded NMOS) and GCNMOS (gate coupled NMOS). The device level ESD testing including TLP (transmission line pulse) is given. Several ESD issues caused by advanced technologies have been pointed out. The possible solutions have been developed and summarized including silicide blocking, process optimization, back-end ballasting, and new protection scheme, dummy gate/n-well resistor ballsting, etc. Some of them require process cost increase, and others provide novel, compact, and simple design but involving royalty/IP (intellectual property) issue. Circuit level ESD design and layout design considerations are covered. The top-level ESD protection strategies are also given.

Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

PubMed

Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

2017-04-01

The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, Mark W.

1995-01-01

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Electronic thermometry in tunable tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maksymovych, Petro

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may bemore » measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.« less

Gap junctions contain different amounts of cholesterol which undergo unique sequestering processes during fiber cell differentiation in the embryonic chicken lens.

PubMed

Biswas, Sondip K; Lo, Woo-Kuen

2007-03-09

To determine the possible changes in the distribution of cholesterol in gap junction plaques during fiber cell differentiation and maturation in the embryonic chicken lens. The possible mechanism by which cholesterol is removed from gap junction plaques is also investigated. Filipin cytochemistry in conjunction with freeze-fracture TEM was used to visualize cholesterol, as represented by filipin-cholesterol complexes (FCCs) in gap junction plaques. Quantitative analysis on the heterogeneous distribution of cholesterol in gap junction plaques was conducted from outer and inner cortical regions. A novel technique combining filipin cytochemistry with freeze-fracture replica immunogold labeling (FRIL) was used to label Cx45.6 and Cx56 antibodies in cholesterol-containing gap junctions. Filipin cytochemistry and freeze-fracture TEM and thin-section TEM were used to examine the appearance and nature of the cholesterol-containing vesicular structures associated with gap junction plaques. Chicken lens fibers contain cholesterol-rich, cholesterol-intermediate and cholesterol-free gap junction populations in both outer and inner cortical regions. Filipin cytochemistry and FRIL studies confirmed that cholesterol-containing junctions were gap junctions. Quantitative analysis showed that approximately 86% of gap junctions in the outer cortical zone were cholesterol-rich gap junctions, whereas approximately 81% of gap junctions in the inner cortical zone were cholesterol-free gap junctions. A number of pleiomorphic cholesterol-rich vesicles of varying sizes were often observed in the gap junction plaques. They appear to be involved in the removal of cholesterol from gap junction plaques through endocytosis. Gap junctions in the young fibers are enriched with cholesterol because they are assembled in the unique cholesterol-rich cell membranes in the lens. A majority of cholesterol-rich gap junctions in the outer young fibers are transformed into cholesterol-free ones in the inner mature fibers during fiber cell maturation. A distinct endocytotic process appears to be involved in removing cholesterol from the cholesterol-containing gap junctions, and it may play a major role in the transformation of cholesterol-rich gap junctions into cholesterol-free ones during fiber cell maturation.

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, M.W.

1995-02-21

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.

Geochemical signals of progressive continental rupture in the Main Ethiopian Rift

NASA Astrophysics Data System (ADS)

Furman, T.; Bryce, J.; Yirgu, G.; Ayalew, D.; Cooper, L.

2003-04-01

Mafic volcanics of the Main Ethiopian Rift record the development of magmatic rift segments during continental extension. The Ethiopian Rift is one arm of a triple junction that formed above a Paleogene mantle plume, concurrent with eruption of flood basalts ca. 30 Ma across northern Ethiopian and Yemen. The geochemistry of Ethiopian Rift lavas thus provides insight into processes associated with the shift from mechanical (lithospheric) to magmatic (asthenospheric) segmentation in the transitional phase of continental rifting. Quaternary basalts from five volcanic centers representing three magmatic segments display along-axis geochemical variations that likely reflect the degree of rifting and magma supply, which increase abruptly with proximity to the highly-extended Afar region. To first order, the geochemical data indicate a decreasing degree of shallow-level fractionation and greater involvement of depleted or plume-like mantle source materials in basalts sampled closer to the Afar. These spatially controlled geochemical signatures observed in contemporaneous basalts are similar to temporal variations documented in southern Ethiopia, where Quaternary lavas indicate a greater degree of crustal extension than those erupted at the onset of plume activity. Primitive Ethiopian Rift basalts have geochemical signatures (e.g., Ce/Pb, La/Nb, Ba/Nb, Ba/Rb, U/Th) that overlap ocean island basalt compositions, suggesting involvement of sub-lithospheric source materials. The estimated depth of melting (65-75 km) is shallower than values obtained for young primitive mafic lavas from the Western Rift and southern Kenya as well as Oligocene Ethiopian flood basalts from the onset of plume-driven activity. Basalts from the Turkana region (N. Kenya) and Erta 'Ale (Danakil depression) reflect melting at shallower levels, corresponding to the greater degree of crustal extension in these provinces. Preliminary Sr and Nd isotopic data trend towards primitive earth values, consistent with values observed previously in central Ethiopia that are associated with moderately high 3He/4He values (<19 RA; Marty et al. 1996) and interpreted as reflecting involvement of a mantle plume. Taken together, these data support a model in which upwelling plume material sampled in central Ethiopia incorporates depleted mantle during ascent beneath the more highly extended portions of the African Rift.

Gap/silicon Tandem Solar Cell with Extended Temperature Range

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2006-01-01

A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

Gap and tight junctions in the formation of feather branches: A descriptive ultrastructural study.

PubMed

Alibardi, Lorenzo

2010-08-20

The present study has focused on the distribution and ultrastructure of gap and tight junctions responsible for the formation of the barb/barbule branching in developing feathers using immunocytochemical detection. Apart from desmosomes, both tight and gap junctions are present between differentiating barb/barbule cells and during keratinization. While gap junctions are rare along the perimeter of these cells, tight junctions tend to remain localized in nodes joining barbule cells and between barb cells of the ramus. Occludin and connexin-26 but not connexin-43 have been detected between barb medullary, barb cortical and barbule cells during formation of barbs. Gap junctions are present in supportive cells located in the vicinity of barbule cells and destined to degenerate, but no close junctions are present between supportive and barb/barbule cells. Close junctions mature into penta-laminar junctions that are present between mature barb/barbule cells. Immunolabeling for occludin and Cx26 is rare along these cornified junctions. The junctions allow barb/barbule cells to remain connected until feather-keratin form the mature corneous syncytium that constitutes the barbs. A discussion of the role of gap and tight junctions during feather morphogenesis is presented. 2010 Elsevier GmbH. All rights reserved.

An EMMPRIN-γ-catenin-Nm23 complex drives ATP production and actomyosin contractility at endothelial junctions.

PubMed

Moreno, Vanessa; Gonzalo, Pilar; Gómez-Escudero, Jesús; Pollán, Ángela; Acín-Pérez, Rebeca; Breckenridge, Mark; Yáñez-Mó, María; Barreiro, Olga; Orsenigo, Fabrizio; Kadomatsu, Kenji; Chen, Christopher S; Enríquez, José A; Dejana, Elisabetta; Sánchez-Madrid, Francisco; Arroyo, Alicia G

2014-09-01

Cell-cell adhesions are important sites through which cells experience and resist forces. In endothelial cells, these forces regulate junction dynamics and determine endothelial barrier strength. We identify the Ig superfamily member EMMPRIN (also known as basigin) as a coordinator of forces at endothelial junctions. EMMPRIN localization at junctions correlates with endothelial junction strength in different mouse vascular beds. Accordingly, EMMPRIN-deficient mice show altered junctions and increased junction permeability. Lack of EMMPRIN alters the localization and function of VE-cadherin (also known as cadherin-5) by decreasing both actomyosin contractility and tugging forces at endothelial cell junctions. EMMPRIN ensures proper actomyosin-driven maturation of competent endothelial junctions by forming a molecular complex with γ-catenin (also known as junction plakoglobin) and Nm23 (also known as NME1), a nucleoside diphosphate kinase, thereby locally providing ATP to fuel the actomyosin machinery. These results provide a novel mechanism for the regulation of actomyosin contractility at endothelial junctions and might have broader implications in biological contexts such as angiogenesis, collective migration and tissue morphogenesis by coupling compartmentalized energy production to junction assembly. © 2014. Published by The Company of Biologists Ltd.

An EMMPRIN–γ-catenin–Nm23 complex drives ATP production and actomyosin contractility at endothelial junctions

PubMed Central

Moreno, Vanessa; Gonzalo, Pilar; Gómez-Escudero, Jesús; Pollán, Ángela; Acín-Pérez, Rebeca; Breckenridge, Mark; Yáñez-Mó, María; Barreiro, Olga; Orsenigo, Fabrizio; Kadomatsu, Kenji; Chen, Christopher S.; Enríquez, José A.; Dejana, Elisabetta; Sánchez-Madrid, Francisco; Arroyo, Alicia G.

2014-01-01

ABSTRACT Cell–cell adhesions are important sites through which cells experience and resist forces. In endothelial cells, these forces regulate junction dynamics and determine endothelial barrier strength. We identify the Ig superfamily member EMMPRIN (also known as basigin) as a coordinator of forces at endothelial junctions. EMMPRIN localization at junctions correlates with endothelial junction strength in different mouse vascular beds. Accordingly, EMMPRIN-deficient mice show altered junctions and increased junction permeability. Lack of EMMPRIN alters the localization and function of VE-cadherin (also known as cadherin-5) by decreasing both actomyosin contractility and tugging forces at endothelial cell junctions. EMMPRIN ensures proper actomyosin-driven maturation of competent endothelial junctions by forming a molecular complex with γ-catenin (also known as junction plakoglobin) and Nm23 (also known as NME1), a nucleoside diphosphate kinase, thereby locally providing ATP to fuel the actomyosin machinery. These results provide a novel mechanism for the regulation of actomyosin contractility at endothelial junctions and might have broader implications in biological contexts such as angiogenesis, collective migration and tissue morphogenesis by coupling compartmentalized energy production to junction assembly. PMID:24994937

Abundance and ultrastructural diversity of neuronal gap junctions in the OFF and ON sublaminae of the inner plexiform layer of rat and mouse retina.

PubMed

Kamasawa, N; Furman, C S; Davidson, K G V; Sampson, J A; Magnie, A R; Gebhardt, B R; Kamasawa, M; Yasumura, T; Zumbrunnen, J R; Pickard, G E; Nagy, J I; Rash, J E

2006-11-03

Neuronal gap junctions are abundant in both outer and inner plexiform layers of the mammalian retina. In the inner plexiform layer (IPL), ultrastructurally-identified gap junctions were reported primarily in the functionally-defined and anatomically-distinct ON sublamina, with few reported in the OFF sublamina. We used freeze-fracture replica immunogold labeling and confocal microscopy to quantitatively analyze the morphologies and distributions of neuronal gap junctions in the IPL of adult rat and mouse retina. Under "baseline" conditions (photopic illumination/general anesthesia), 649 neuronal gap junctions immunogold-labeled for connexin36 were identified in rat IPL, of which 375 were photomapped to OFF vs. ON sublaminae. In contrast to previous reports, the volume-density of gap junctions was equally abundant in both sublaminae. Five distinctive morphologies of gap junctions were identified: conventional crystalline and non-crystalline "plaques" (71% and 3%), plus unusual "string" (14%), "ribbon" (7%) and "reticular" (2%) forms. Plaque and reticular gap junctions were distributed throughout the IPL. However, string and ribbon gap junctions were restricted to the OFF sublamina, where they represented 48% of gap junctions in that layer. In string and ribbon junctions, curvilinear strands of connexons were dispersed over 5 to 20 times the area of conventional plaques having equal numbers of connexons. To define morphologies of gap junctions under different light-adaptation conditions, we examined an additional 1150 gap junctions from rats and mice prepared after 30 min of photopic, mesopic and scotopic illumination, with and without general anesthesia. Under these conditions, string and ribbon gap junctions remained abundant in the OFF sublamina and absent in the ON sublamina. Abundant gap junctions in the OFF sublamina of these two rodents with rod-dominant retinas revealed previously-undescribed but extensive pathways for inter-neuronal communication; and the wide dispersion of connexons in string and ribbon gap junctions suggests unique structural features of gap junctional coupling in the OFF vs. ON sublamina.

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

NASA Technical Reports Server (NTRS)

Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

1990-01-01

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

DOEpatents

Chang, Y. Austin; Yang, Jianhua Joshua

2008-11-11

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Possible involvement of gap junctions in the barrier function of tight junctions of brain and lung endothelial cells.

PubMed

Nagasawa, Kunihiko; Chiba, Hideki; Fujita, Hiroki; Kojima, Takashi; Saito, Tsuyoshi; Endo, Toshiaki; Sawada, Norimasa

2006-07-01

Gap-junction plaques are often observed with tight-junction strands of vascular endothelial cells but the molecular interaction and functional relationships between these two junctions remain obscure. We herein show that gap-junction proteins connexin40 (Cx40) and Cx43 are colocalized and coprecipitated with tight-junction molecules occludin, claudin-5, and ZO-1 in porcine blood-brain barrier (BBB) endothelial cells. Gap junction blockers 18beta-glycyrrhetinic acid (18beta-GA) and oleamide (OA) did not influence expression of Cx40, Cx43, occludin, claudin-5, junctional adhesion molecule (JAM)-A, JAM-B, JAM-C, or ZO-1, or their subcellular localization in the porcine BBB endothelial cells. In contrast, these gap-junction blocking agents inhibited the barrier function of tight junctions in cells, determined by measurement of transendothelial electrical resistance and paracellular flux of mannitol and inulin. 18beta-GA also significantly reduced the barrier property in rat lung endothelial (RLE) cells expressing doxycycline-induced claudin-1, but did not change the interaction between Cx43 and either claudin-1 or ZO-1, nor their expression levels or subcellular distribution. These findings suggest that Cx40- and/or Cx43-based gap junctions might be required to maintain the endothelial barrier function without altering the expression and localization of the tight-junction components analyzed. Copyright 2006 Wiley-Liss, Inc.

Research and develop locking design for NJDOT junction boxes : final report, April 2009.

DOT National Transportation Integrated Search

2009-04-01

The report outlines the guidelines for securing electrical junction box covers to the junction box to prevent vandalism. The report provides details drawings that show various methods for securing the junction box cover to the junction box.

Four-junction superconducting circuit

PubMed Central

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Intercellular junctions between palisade nerve endings and outer root sheath cells of rat vellus hairs.

PubMed

Kaidoh, T; Inoué, T

2000-05-15

Hair follicles have a longitudinal set of sensory nerve endings called palisade nerve endings (PN). We examined the junctional structures between the PN and outer root sheath (ORS) cells of hair follicles in the rat external ear. Transmission electron microscopy of serial thin sections showed that the processes of the ORS cells penetrated the basal lamina of the hair follicle, forming intercellular junctions with the PN (PN-ORS junctions). Two types of junctions were found: junctions between nerve endings and ORS cells (N-ORS junctions) and those between Schwann cell processes and ORS cells (S-ORS junctions). The N-ORS junctions had two subtypes: 1) a short process or small eminence of the ORS cell was attached to the nerve ending (type I); or 2) a process of the ORS cell was invaginated into the nerve ending (type II). The S-ORS junctions also had two subtypes: 1) a short process or small eminence of the ORS cell was abutted on the Schwann cell process (type I); or 2) a process of the ORS cell was invaginated into the Schwann cell process (type II). Vesicles, coated pits, coated vesicles, and endosomes were sometimes seen in nerve endings, Schwann cells, and ORS cells near the junctions. Computer-aided reconstruction of the serial thin sections displayed the three-dimensional structure of these junctions. These results suggested that the PN-ORS junctions provided direct relationships between the PN and ORS in at least four different patterns. The discovery of these junctions shows the PN-ORS relationship to be closer than previously realized. We speculate that these junctions may have roles in attachment of the PN to the ORS, contributing to increases in the sensitivity of the PN, and in chemical signaling between the PN and ORS.

Superstrate sub-cell voltage-matched multijunction solar cells

DOEpatents

Mascarenhas, Angelo; Alberi, Kirstin

2016-03-15

Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

Effect of solar-cell junction geometry on open-circuit voltage

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

Anisotropic-Scale Junction Detection and Matching for Indoor Images.

PubMed

Xue, Nan; Xia, Gui-Song; Bai, Xiang; Zhang, Liangpei; Shen, Weiming

Junctions play an important role in characterizing local geometrical structures of images, and the detection of which is a longstanding but challenging task. Existing junction detectors usually focus on identifying the location and orientations of junction branches while ignoring their scales, which, however, contain rich geometries of images. This paper presents a novel approach for junction detection and characterization, which especially exploits the locally anisotropic geometries of a junction and estimates its scales by relying on an a-contrario model. The output junctions are with anisotropic scales, saying that a scale parameter is associated with each branch of a junction and are thus named as anisotropic-scale junctions (ASJs). We then apply the new detected ASJs for matching indoor images, where there are dramatic changes of viewpoints and the detected local visual features, e.g., key-points, are usually insufficient and lack distinctive ability. We propose to use the anisotropic geometries of our junctions to improve the matching precision of indoor images. The matching results on sets of indoor images demonstrate that our approach achieves the state-of-the-art performance on indoor image matching.Junctions play an important role in characterizing local geometrical structures of images, and the detection of which is a longstanding but challenging task. Existing junction detectors usually focus on identifying the location and orientations of junction branches while ignoring their scales, which, however, contain rich geometries of images. This paper presents a novel approach for junction detection and characterization, which especially exploits the locally anisotropic geometries of a junction and estimates its scales by relying on an a-contrario model. The output junctions are with anisotropic scales, saying that a scale parameter is associated with each branch of a junction and are thus named as anisotropic-scale junctions (ASJs). We then apply the new detected ASJs for matching indoor images, where there are dramatic changes of viewpoints and the detected local visual features, e.g., key-points, are usually insufficient and lack distinctive ability. We propose to use the anisotropic geometries of our junctions to improve the matching precision of indoor images. The matching results on sets of indoor images demonstrate that our approach achieves the state-of-the-art performance on indoor image matching.

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, Hong Q.; Reinhardt, Kitt C.

1999-01-01

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, H.Q.; Reinhardt, K.C.

1999-08-31

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

[Influence of Cx26/Cx32 gap junction channel on antineoplastic effect of etoposide in Hela cells].

PubMed

Tong, Xu-Hui; Dong, Shu-Ying; Jiang, Guo-Jun; Fan, Gao-Fu

2012-03-01

To observe the influence of Cx26/Cx32 gap junction channel on the antineoplastic effect of etoposide in Hela cervical cancer cells. Fluorescence trace was used to assay the gap junction intercellular communication mediated by Cx26/Cx32 in Hela cells and its functional modulation by the pharmacological agents (oleamide, retinoid acid). A standard colony-forming assay was applied to determine the cell growth-inhibiting effect of etoposide in Hela cells with functional modulation of the gap junction. Hoechst 33258 staining was used to assess the changes in etoposide-induced apoptosis of Hela cells with altered gap junction functions. Oleamide markedly decreased while retinoid acid obviously increased the gap junction function in Hela cells. Standard colony-forming assay showed that etoposide produced a lowered antiproliferative effect in Hela cells with reduced gap junction and an increased antiproliferative effect in cells with enhanced gap junction function. In cells with a reduced gap junction function, etoposide induced a lowered apoptosis rate, which increased obviously in cells with an enhanced gap junction function. The antineoplastic effect of etoposide is reduced in Hela cells with a decreased gap junction intercellular communication mediated by Cx26/Cx32 and is enhanced in cells with an increased gap junction intercellular communication.

Effects of 18beta-glycyrrhetinic acid on the junctional complex and steroidogenesis in rat adrenocortical cells.

PubMed

Huang, Shih-Horng; Wu, Jiahn-Chun; Hwang, Ra-Der; Yeo, Hui-Lin; Wang, Seu-Mei

2003-09-01

Cellular junctions play important roles in cell differentiation, signal transduction, and cell function. This study investigated their function in steroid secretion by adrenal cells. Immunofluorescence staining revealed the presence of gap junctions and adherens junctions between adrenal cells. The major gap junction protein, connexin43, was seen as a linear dotted pattern of the typical gap junction plaques, in contrast to alpha-, beta-, and gamma-catenin, which were seen as continuous, linear staining of cell-cell adherens junction. Treatment with 18beta-glycyrrhetinic acid, a gap junction inhibitor, reduced the immunoreactivity of these proteins in a time- and dose-dependent manner, and caused the gap junction and adherens junction to separate longitudinally from the cell-cell contact sites, indicating the structural interdependency of these two junctions. Interestingly, 18beta-glycyrrhetinic acid stimulated a two- to three-fold increase in steroid production in these adrenal cells lacking intact cell junctions. These data raise the question of the necessity for cell communication for the endocrine function of adrenal cells. Pharmacological analyses indicated that the steroidogenic effect of 18beta-glycyrrhetinic acid was partially mediated by extracellular signal-related kinase and calcium/calmodulin-dependent kinase, a pathway distinct from the protein kinase A signaling pathway already known to mediate steroidogenesis in adrenal cells. Copyright 2003 Wiley-Liss, Inc.

Gap junctions modulate glioma invasion by direct transfer of microRNA.

PubMed

Hong, Xiaoting; Sin, Wun Chey; Harris, Andrew L; Naus, Christian C

2015-06-20

The invasiveness of high-grade glioma is the primary reason for poor survival following treatment. Interaction between glioma cells and surrounding astrocytes are crucial to invasion. We investigated the role of gap junction mediated miRNA transfer in this context. By manipulating gap junctions with a gap junction inhibitor, siRNAs, and a dominant negative connexin mutant, we showed that functional glioma-glioma gap junctions suppress glioma invasion while glioma-astrocyte and astrocyte-astrocyte gap junctions promote it in an in vitro transwell invasion assay. After demonstrating that glioma-astrocyte gap junctions are permeable to microRNA, we compared the microRNA profiles of astrocytes before and after co-culture with glioma cells, identifying specific microRNAs as candidates for transfer through gap junctions from glioma cells to astrocytes. Further analysis showed that transfer of miR-5096 from glioma cells to astrocytes is through gap junctions; this transfer is responsible, in part, for the pro-invasive effect. Our results establish a role for glioma-astrocyte gap junction mediated microRNA signaling in modulation of glioma invasive behavior, and that gap junction coupling among astrocytes magnifies the pro-invasive signaling. Our findings reveal the potential for therapeutic interventions based on abolishing alteration of stromal cells by tumor cells via manipulation of microRNA and gap junction channel activity.

Gap junctions modulate glioma invasion by direct transfer of microRNA

PubMed Central

Hong, Xiaoting; Sin, Wun Chey; Harris, Andrew L.; Naus, Christian C.

2015-01-01

The invasiveness of high-grade glioma is the primary reason for poor survival following treatment. Interaction between glioma cells and surrounding astrocytes are crucial to invasion. We investigated the role of gap junction mediated miRNA transfer in this context. By manipulating gap junctions with a gap junction inhibitor, siRNAs, and a dominant negative connexin mutant, we showed that functional glioma-glioma gap junctions suppress glioma invasion while glioma-astrocyte and astrocyte-astrocyte gap junctions promote it in an in vitro transwell invasion assay. After demonstrating that glioma-astrocyte gap junctions are permeable to microRNA, we compared the microRNA profiles of astrocytes before and after co-culture with glioma cells, identifying specific microRNAs as candidates for transfer through gap junctions from glioma cells to astrocytes. Further analysis showed that transfer of miR-5096 from glioma cells to astrocytes is through gap junctions; this transfer is responsible, in part, for the pro-invasive effect. Our results establish a role for glioma-astrocyte gap junction mediated microRNA signaling in modulation of glioma invasive behavior, and that gap junction coupling among astrocytes magnifies the pro-invasive signaling. Our findings reveal the potential for therapeutic interventions based on abolishing alteration of stromal cells by tumor cells via manipulation of microRNA and gap junction channel activity. PMID:25978028

CSReport: A New Computational Tool Designed for Automatic Analysis of Class Switch Recombination Junctions Sequenced by High-Throughput Sequencing.

PubMed

Boyer, François; Boutouil, Hend; Dalloul, Iman; Dalloul, Zeinab; Cook-Moreau, Jeanne; Aldigier, Jean-Claude; Carrion, Claire; Herve, Bastien; Scaon, Erwan; Cogné, Michel; Péron, Sophie

2017-05-15

B cells ensure humoral immune responses due to the production of Ag-specific memory B cells and Ab-secreting plasma cells. In secondary lymphoid organs, Ag-driven B cell activation induces terminal maturation and Ig isotype class switch (class switch recombination [CSR]). CSR creates a virtually unique IgH locus in every B cell clone by intrachromosomal recombination between two switch (S) regions upstream of each C region gene. Amount and structural features of CSR junctions reveal valuable information about the CSR mechanism, and analysis of CSR junctions is useful in basic and clinical research studies of B cell functions. To provide an automated tool able to analyze large data sets of CSR junction sequences produced by high-throughput sequencing (HTS), we designed CSReport, a software program dedicated to support analysis of CSR recombination junctions sequenced with a HTS-based protocol (Ion Torrent technology). CSReport was assessed using simulated data sets of CSR junctions and then used for analysis of Sμ-Sα and Sμ-Sγ1 junctions from CH12F3 cells and primary murine B cells, respectively. CSReport identifies junction segment breakpoints on reference sequences and junction structure (blunt-ended junctions or junctions with insertions or microhomology). Besides the ability to analyze unprecedentedly large libraries of junction sequences, CSReport will provide a unified framework for CSR junction studies. Our results show that CSReport is an accurate tool for analysis of sequences from our HTS-based protocol for CSR junctions, thereby facilitating and accelerating their study. Copyright © 2017 by The American Association of Immunologists, Inc.

Regulation of gap junctional charge selectivity in cells coexpressing connexin 40 and connexin 43.

PubMed

Heyman, Nathanael S; Kurjiaka, David T; Ek Vitorin, Jose F; Burt, Janis M

2009-07-01

Expression of connexin 40 (Cx40) and Cx43 in cardiovascular tissues varies as a function of age, injury, and development with unknown consequences on the selectivity of junctional communication and its acute regulation. We investigated the PKC-dependent regulation of charge selectivity in junctions composed of Cx43, Cx40, or both by simultaneous assessment of junctional permeance rate constants (B(dye)) for dyes of similar size but opposite charge, N,N,N-trimethyl-2-[methyl-(7-nitro-2,1,3-benzoxadiol-4-yl)amino]ethanaminium (NBD-M-TMA; +1) and Alexa 350 (-1). The ratio of dye rate constants (B(NBD-M-TMA)/B(Alexa 350)) indicated that Cx40 junctions are cation selective (10.7 +/- 0.5), whereas Cx43 junction are nonselective (1.22 +/- 0.14). In coexpressing cells, a broad range of junctional selectivities was observed with mean cation selectivity increasing as the Cx40 to Cx43 expression ratio increased. PKC activation reduced or eliminated dye permeability of Cx43 junctions without altering their charge selectivity, had no effect on either permeability or charge selectivity of Cx40 junctions, and significantly increased the cation selectivity of junctions formed by coexpressing cells (approaching charge selectivity of Cx40 junctions). Junctions composed of Cx43 truncated at residue 257 (Cx43tr) were also not charge selective, but when Cx43tr was coexpressed with Cx40, a broad range of junctional selectivities that was unaffected by PKC activation was observed. Thus, whereas the charge selectivities of homomeric/homotypic Cx43 and Cx40 junctions appear invariant, the selectivities of junctions formed by cells coexpressing Cx40 and Cx43 vary considerably, reflecting both their relative expression levels and phosphorylation-dependent regulation. Such regulation could represent a mechanism by which coexpressing cells such as vascular endothelium and atrial cells regulate acutely the selective intercellular communication mediated by their gap junctions.

Method of making high breakdown voltage semiconductor device

DOEpatents

Arthur, Stephen D.; Temple, Victor A. K.

1990-01-01

A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

Methods for the fabrication of thermally stable magnetic tunnel junctions

DOEpatents

Chang, Y Austin [Middleton, WI; Yang, Jianhua J [Madison, WI; Ladwig, Peter F [Hutchinson, MN

2009-08-25

Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

Possible Involvement of Tight Junctions, Extracellular Matrix and Nuclear Receptors in Epithelial Differentiation

PubMed Central

Ichikawa-Tomikawa, Naoki; Sugimoto, Kotaro; Satohisa, Seiro; Nishiura, Keisuke; Chiba, Hideki

2011-01-01

Tight junctions are intercellular junctions localized at the most apical end of the lateral plasma membrane. They consist of four kinds of transmembrane proteins (occludin, claudins, junctional adhesion molecules, and tricellulin) and huge numbers of scaffolding proteins and contribute to the paracellular barrier and fence function. The mutation and deletion of these proteins impair the functions of tight junctions and cause various human diseases. In this paper, we provide an overview of recent studies on transmembrane proteins of tight junctions and highlight the functional significance of tight junctions, extracellular matrix, and nuclear receptors in epithelial differentiation. PMID:22162632

Gap junction- and hemichannel-independent actions of connexins.

PubMed

Jiang, Jean X; Gu, Sumin

2005-06-10

Connexins have been known to be the protein building blocks of gap junctions and mediate cell-cell communication. In contrast to the conventional dogma, recent evidence suggests that in addition to forming gap junction channels, connexins possess gap junction-independent functions. One important gap junction-independent function for connexins is to serve as the major functional component for hemichannels, the un-apposed halves of gap junctions. Hemichannels, as independent functional units, play roles that are different from that of gap junctions in the cell. The other functions of connexins appear to be gap junction- and hemichannel-independent. Published studies implicate the latter functions of connexins in cell growth, differentiation, tumorigenicity, injury, and apoptosis, although the mechanistic aspects of these actions remain largely unknown. In this review, gap junction- and hemichannel-independent functions of connexins are summarized, and the molecular mechanisms underlying these connexin functions are speculated and discussed.

Atomic-scaled characterization of graphene PN junctions

NASA Astrophysics Data System (ADS)

Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

Molecular mechanisms regulating formation, trafficking and processing of annular gap junctions.

PubMed

Falk, Matthias M; Bell, Cheryl L; Kells Andrews, Rachael M; Murray, Sandra A

2016-05-24

Internalization of gap junction plaques results in the formation of annular gap junction vesicles. The factors that regulate the coordinated internalization of the gap junction plaques to form annular gap junction vesicles, and the subsequent events involved in annular gap junction processing have only relatively recently been investigated in detail. However it is becoming clear that while annular gap junction vesicles have been demonstrated to be degraded by autophagosomal and endo-lysosomal pathways, they undergo a number of additional processing events. Here, we characterize the morphology of the annular gap junction vesicle and review the current knowledge of the processes involved in their formation, fission, fusion, and degradation. In addition, we address the possibility for connexin protein recycling back to the plasma membrane to contribute to gap junction formation and intercellular communication. Information on gap junction plaque removal from the plasma membrane and the subsequent processing of annular gap junction vesicles is critical to our understanding of cell-cell communication as it relates to events regulating development, cell homeostasis, unstable proliferation of cancer cells, wound healing, changes in the ischemic heart, and many other physiological and pathological cellular phenomena.

ABUNDANCE AND ULTRASTRUCTURAL DIVERSITY OF NEURONAL GAP JUNCTIONS IN THE OFF AND ON SUBLAMINAE OF THE INNER PLEXIFORM LAYER OF RAT AND MOUSE RETINA

PubMed Central

KAMASAWA, N.; FURMAN, C. S.; DAVIDSON, K. G. V.; SAMPSON, J. A.; MAGNIE, A. R.; GEBHARDT, B. R.; KAMASAWA, M.; YASUMURA, T.; ZUMBRUNNEN, J. R.; PICKARD, G. E.; NAGY, J. I.; RASH, J. E.

2007-01-01

Neuronal gap junctions are abundant in both outer and inner plexiform layers of the mammalian retina. In the inner plexiform layer (IPL), ultrastructurally-identified gap junctions were reported primarily in the functionally-defined and anatomically-distinct ON sublamina, with few reported in the OFF sublamina. We used freeze-fracture replica immunogold labeling and confocal microscopy to quantitatively analyze the morphologies and distributions of neuronal gap junctions in the IPL of adult rat and mouse retina. Under “baseline” conditions (photopic illumination/general anesthesia), 649 neuronal gap junctions immunogold-labeled for connexin36 were identified in rat IPL, of which 375 were photomapped to OFF vs. ON sublaminae. In contrast to previous reports, the volume-density of gap junctions was equally abundant in both sublaminae. Five distinctive morphologies of gap junctions were identified: conventional crystalline and non-crystalline “plaques” (71% and 3%), plus unusual “string” (14%), “ribbon” (7%) and “reticular” (2%) forms. Plaque and reticular gap junctions were distributed throughout the IPL. However, string and ribbon gap junctions were restricted to the OFF sublamina, where they represented 48% of gap junctions in that layer. In string and ribbon junctions, curvilinear strands of connexons were dispersed over 5 to 20 times the area of conventional plaques having equal numbers of connexons. To define morphologies of gap junctions under different light-adaptation conditions, we examined an additional 1150 gap junctions from rats and mice prepared after 30 min of photopic, mesopic and scotopic illumination, with and without general anesthesia. Under these conditions, string and ribbon gap junctions remained abundant in the OFF sublamina and absent in the ON sublamina. Abundant gap junctions in the OFF sublamina of these two rodents with rod-dominant retinas revealed previously-undescribed but extensive pathways for inter-neuronal communication; and the wide dispersion of connexons in string and ribbon gap junctions suggests unique structural features of gap junctional coupling in the OFF vs. ON sublamina. PMID:17010526

Signaling from the Podocyte Intercellular Junction to the Actin Cytoskeleton

PubMed Central

George, Britta; Holzman, Lawrence B.

2012-01-01

Observations of hereditary glomerular disease support the contention that podocyte intercellular junction proteins are essential for junction formation and maintenance. Genetic deletion of most of these podocyte intercellular junction proteins results in foot process effacement and proteinuria. This review focuses on the current understanding of molecular mechanisms by which podocyte intercellular junction proteins such as the Nephrin-Neph1-Podocin receptor complex coordinate cytoskeletal dynamics and thus intercellular junction formation, maintenance and injury-dependent remodeling. PMID:22958485

Visualizing the effect of dynamin inhibition on annular gap vesicle formation and fission

PubMed Central

Nickel, Beth; Boller, Marie; Schneider, Kimberly; Shakespeare, Teresa; Gay, Vernon; Murray, Sandra A.

2013-01-01

Summary Although gap junction plaque assembly has been extensively studied, mechanisms involved in plaque disassembly are not well understood. Disassembly involves an internalization process in which annular gap junction vesicles are formed. These vesicles undergo fission, but the molecular machinery needed for these fissions has not been described. The mechanoenzyme dynamin has been previously demonstrated to play a role in gap junction plaque internalization. To investigate the role of dynamin in annular gap junction vesicle fission, immunocytochemical, time-lapse and transmission electron microscopy were used to analyze SW-13 adrenocortical cells in culture. Dynamin was demonstrated to colocalize with gap junction plaques and vesicles. Dynamin inhibition, by siRNA knockdown or treatment with the dynamin GTPase inhibitor dynasore, increased the number and size of gap junction ‘buds’ suspended from the gap junction plaques. Buds, in control populations, were frequently released to form annular gap junction vesicles. In dynamin-inhibited populations, the buds were larger and infrequently released and thus fewer annular gap junction vesicles were formed. In addition, the number of annular gap junction vesicle fissions per hour was reduced in the dynamin-inhibited populations. We believe this to be the first report addressing the details of annular gap junction vesicle fissions and demonstrating a role of dynamin in this process. This information is crucial for elucidating the relationship between gap junctions, membrane regulation and cell behavior. PMID:23591819

Role of heteromeric gap junctions in the cytotoxicity of cisplatin.

PubMed

Tong, Xuhui; Dong, Shuying; Yu, Meiling; Wang, Qin; Tao, Liang

2013-08-09

In several systems, the presence of gap junctions made of a single connexin has been shown to enhance the cytotoxicity of cisplatin. However, most gap junction channels in vivo appear to be heteromeric (composed of more than one connexin isoform). Here we explore in HeLa cells the cytotoxicity to cisplatin that is enhanced by heteromeric gap junctions composed of Cx26 and Cx32, which have been shown to be more selective among biological permeants than the corresponding homomeric channels. We found that survival and subsequent proliferation of cells exposed to cisplatin were substantially reduced when gap junctions were present than when there were no gap junctions. Functional inhibition of gap junctions by oleamide enhanced survival/proliferation, and enhancement of gap junctions by retinoic acid decreased survival/proliferation. These effects occurred only in high density cultures, and the treatments were without effect when there was no opportunity for gap junction formation. The presence of functional gap junctions enhanced apoptosis as reflected in markers of both early-stage and late-stage apoptosis. Furthermore, analysis of caspases 3, 8 and 9 showed that functional gap junctions specifically induced apoptosis by the mitochondrial pathway. These results demonstrate that heteromeric Cx26/Cx32 gap junctions increase the cytotoxicity of cisplatin by induction of apoptosis via the mitochondrial pathway. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Visualizing the effect of dynamin inhibition on annular gap vesicle formation and fission.

PubMed

Nickel, Beth; Boller, Marie; Schneider, Kimberly; Shakespeare, Teresa; Gay, Vernon; Murray, Sandra A

2013-06-15

Although gap junction plaque assembly has been extensively studied, mechanisms involved in plaque disassembly are not well understood. Disassembly involves an internalization process in which annular gap junction vesicles are formed. These vesicles undergo fission, but the molecular machinery needed for these fissions has not been described. The mechanoenzyme dynamin has been previously demonstrated to play a role in gap junction plaque internalization. To investigate the role of dynamin in annular gap junction vesicle fission, immunocytochemical, time-lapse and transmission electron microscopy were used to analyze SW-13 adrenocortical cells in culture. Dynamin was demonstrated to colocalize with gap junction plaques and vesicles. Dynamin inhibition, by siRNA knockdown or treatment with the dynamin GTPase inhibitor dynasore, increased the number and size of gap junction 'buds' suspended from the gap junction plaques. Buds, in control populations, were frequently released to form annular gap junction vesicles. In dynamin-inhibited populations, the buds were larger and infrequently released and thus fewer annular gap junction vesicles were formed. In addition, the number of annular gap junction vesicle fissions per hour was reduced in the dynamin-inhibited populations. We believe this to be the first report addressing the details of annular gap junction vesicle fissions and demonstrating a role of dynamin in this process. This information is crucial for elucidating the relationship between gap junctions, membrane regulation and cell behavior.

The Junction of Hellenic and Cyprus Arcs: the Bey Daglari Lineament, Offshore Termination of the Antalya Basin

NASA Astrophysics Data System (ADS)

Gogacz, A.; Hall, J.; Cifci, G.; Yasar, D.; Kucuk, M.; Yaltirak, C.; Aksu, A.

2009-05-01

The Antalya Basin is one of a series of basins that sweep along the Cyprus Arc in the forearc region between the (formerly) volcanic Tauride Mountains on Turkey in the north and the subduction zone and associated suture between the African plate and the Aegean-Anatolian microplate in the eastern Mediterranean, south of Cyprus. Miocene contraction occurs widely on southwest verging thrusts. Pliocene-Quaternary structures vary from extension/transtension in the northeast, adjacent to the Turkish coastline, to transpression in the southwest, farther offshore. All these structures are truncated at the northwest end of the Antalya Basin by a broad zone of NNE-SSW-trending transverse structure that appears to represent a prolongation of the extreme easterly transform end of the Hellenic arc. Our mapping suggests that this broad zone links the Hellenic Arc with the Isparta Angle in southern Turkey, which we suggest is an earlier location of the junction of Hellenic and Cyprus Arcs: the junction migrated to the southwest over time, as the Hellenic Arc rolled back. The Turkish coastline turns from parallel to the Antalya Basin structures in the east to a N-S orientation, cutting across the trend of the Antalya Basin. The Antalya Complex and the Bey Dağları Mountains provide a spectacular backdrop to this edge of the offshore basin. Somewhere offshore lies the structural termination of the Antalya Basin. In 2001, we acquired around 400 km of high-resolution multi-channel seismic reflection data across the western end of the Antalya Basin to explore the nature of the termination, which we call the Bey Dağları lineament. We present a selection of the seismic profiles with interpretation of the nature and Neogene history of the lineament. Landward of the N-S-trending coastline, ophiolites of the Antalya Complex are exposed in a series of westerly-verging thrust slivers that extend to the carbonate sequences of the Bey Dağları Mountains. Our seismic data indicate that N-S trending west- and east-verging thrusts define a transpressional continental margin. The shelf is underlain by a prominent angular unconformity between overlying shallow-dipping Pliocene-Quaternary sediments and underlying, easterly- dipping ?Miocene sediments.

Magnetotelluric 2D Modelling Provides Insight on the Structural Characteristics of the Guadalajara (Mexico) Triple Junction Domains

NASA Astrophysics Data System (ADS)

Arboleda Zapata, M. D. J., Sr.; Arzate-Flores, J.; Guevara Betancourt, R. E., Sr.

2017-12-01

The Jalisco Block is a continental microplate produced by the extension along three large structures: the Tepic-Zacoalco rift (TZR), the Colima rift (CR) and the Chapala rift that converge in a triple junction 50 km southwest of Guadalajara, Mexico, with orientation NW-SE, N-S, and E-W respectively. The present study focuses on investigating the deep structure of the north Colima and eastern Zacoalco grabens close to the Guadalajara triple junction (GTJ). This is a first study of its type that provide insight on the grabens structures and crustal characteristics underneath. We measured along two magnetotellurics (MT) profiles that cut perpendicularly the TZR (profile ZAC), and the northern CR (profile SAY) comprising a total of 24 broad band MT soundings. The ZAC profile has 11 stations and has a NE orientation, and the SAY profile has 14 station aligned E-W. Standard processing and editing procedures were completed, and distortion analysis was applied to the data set in order to define the dimensionality and electric strike of the separated profiles. Static shift was corrected using geology information to distinguish the different types of soundings and later averaging for those soundings located over the same lithology. The Bahr dimensionality parameters showed that the medium is mainly 3D for the SAY profile and 2D for the ZAC profile; furthermore, the regional geoelectric strike azimuth calculated with Bahr methodology were -4° and -48° respectively, with good concordance with the main surface structures. The tipper analysis permitted validated these results, as the real induction vectors were nearly perpendicular to main fault structures. All soundings were rotated to the respective regional strike and a 2D simultaneous inversion of the transverse electric (TE) mode, the transvers magnetic (TM) mode and the Tipper was completed. The RMS fitting error yield 3.2% for ZAC profile and 3.7% for SAY profile. Both profiles show a shallow conductive zone at north of the Colima Rift and the south of the Zacoalco rift, which are interpreted as lacustrine and fluvial sediments having maximum thickness of 1.5 and 1.0 km respectively. The profiles show a faulted resistive upper crust, 35 to 40 km thick, that is reliably correlated with mapped surface structures and consistent with two types of extensional processes.

Current deformation in Central Afar and triple junction kinematics deduced from GPS and InSAR measurements

NASA Astrophysics Data System (ADS)

Doubre, Cécile; Déprez, Aline; Masson, Frédéric; Socquet, Anne; Lewi, Elias; Grandin, Raphaël; Nercessian, Alexandre; Ulrich, Patrice; De Chabalier, Jean-Bernard; Saad, Ibrahim; Abayazid, Ahmadine; Peltzer, Gilles; Delorme, Arthur; Calais, Eric; Wright, Tim

2017-02-01

Kinematics of divergent boundaries and Rift-Rift-Rift junctions are classically studied using long-term geodetic observations. Since significant magma-related displacements are expected, short-term deformation provides important constraints on the crustal mechanisms involved both in active rifting and in transfer of extensional deformation between spreading axes. Using InSAR and GPS data, we analyse the surface deformation in the whole Central Afar region in detail, focusing on both the extensional deformation across the Quaternary magmato-tectonic rift segments, and on the zones of deformation transfer between active segments and spreading axes. The largest deformation occurs across the two recently activated Asal-Ghoubbet (AG) and Manda Hararo-Dabbahu (MH-D) magmato-tectonic segments with very high strain rates, whereas the other Quaternary active segments do not concentrate any large strain, suggesting that these rifts are either sealed during interdyking periods or not mature enough to remain a plate boundary. Outside of these segments, the GPS horizontal velocity field shows a regular gradient following a clockwise rotation of the displacements from the Southeast to the East of Afar, with respect to Nubia. Very few shallow creeping structures can be identified as well in the InSAR data. However, using these data together with the strain rate tensor and the rotations rates deduced from GPS baselines, the present-day strain field over Central Afar is consistent with the main tectonic structures, and therefore with the long-term deformation. We investigate the current kinematics of the triple junction included in our GPS data set by building simple block models. The deformation in Central Afar can be described by adding a central microblock evolving separately from the three surrounding plates. In this model, the northern block boundary corresponds to a deep EW-trending trans-tensional dislocation, locked from the surface to 10-13 km and joining at depth the active spreading axes of the Red Sea and the Aden Ridge, from AG to MH-D rift segments. Over the long-term, this plate configuration could explain the presence of the en-échelon magmatic basins and subrifts. However, the transient behaviour of the spreading axes implies that the deformation in Central Afar evolves depending on the availability of magma supply within the well-established segments.

A WAVE2–Arp2/3 actin nucleator apparatus supports junctional tension at the epithelial zonula adherens

PubMed Central

Verma, Suzie; Han, Siew Ping; Michael, Magdalene; Gomez, Guillermo A.; Yang, Zhe; Teasdale, Rohan D.; Ratheesh, Aparna; Kovacs, Eva M.; Ali, Radiya G.; Yap, Alpha S.

2012-01-01

The epithelial zonula adherens (ZA) is a specialized adhesive junction where actin dynamics and myosin-driven contractility coincide. The junctional cytoskeleton is enriched in myosin II, which generates contractile force to support junctional tension. It is also enriched in dynamic actin filaments, which are replenished by ongoing actin assembly. In this study we sought to pursue the relationship between actin assembly and junctional contractility. We demonstrate that WAVE2–Arp2/3 is a major nucleator of actin assembly at the ZA and likely acts in response to junctional Rac signaling. Furthermore, WAVE2–Arp2/3 is necessary for junctional integrity and contractile tension at the ZA. Maneuvers that disrupt the function of either WAVE2 or Arp2/3 reduced junctional tension and compromised the ability of cells to buffer side-to-side forces acting on the ZA. WAVE2–Arp2/3 disruption depleted junctions of both myosin IIA and IIB, suggesting that dynamic actin assembly may support junctional tension by facilitating the local recruitment of myosin. PMID:23051739

A WAVE2-Arp2/3 actin nucleator apparatus supports junctional tension at the epithelial zonula adherens.

PubMed

Verma, Suzie; Han, Siew Ping; Michael, Magdalene; Gomez, Guillermo A; Yang, Zhe; Teasdale, Rohan D; Ratheesh, Aparna; Kovacs, Eva M; Ali, Radiya G; Yap, Alpha S

2012-12-01

The epithelial zonula adherens (ZA) is a specialized adhesive junction where actin dynamics and myosin-driven contractility coincide. The junctional cytoskeleton is enriched in myosin II, which generates contractile force to support junctional tension. It is also enriched in dynamic actin filaments, which are replenished by ongoing actin assembly. In this study we sought to pursue the relationship between actin assembly and junctional contractility. We demonstrate that WAVE2-Arp2/3 is a major nucleator of actin assembly at the ZA and likely acts in response to junctional Rac signaling. Furthermore, WAVE2-Arp2/3 is necessary for junctional integrity and contractile tension at the ZA. Maneuvers that disrupt the function of either WAVE2 or Arp2/3 reduced junctional tension and compromised the ability of cells to buffer side-to-side forces acting on the ZA. WAVE2-Arp2/3 disruption depleted junctions of both myosin IIA and IIB, suggesting that dynamic actin assembly may support junctional tension by facilitating the local recruitment of myosin.

Disruption of gap junctions attenuates aminoglycoside-elicited renal tubular cell injury.

PubMed

Yao, Jian; Huang, Tao; Fang, Xin; Chi, Yuan; Zhu, Ying; Wan, Yigang; Matsue, Hiroyuki; Kitamura, Masanori

2010-08-01

Gap junctions play important roles in the regulation of cell phenotype and in determining cell survival after various insults. Here, we investigated the role of gap junctions in aminoglycoside-induced injury to renal tubular cells. Two tubular epithelial cell lines NRK-E52 and LLC-PK1 were compared for gap junction protein expression and function by immunofluorescent staining, Western blot and dye transfer assay. Cell viability after exposure to aminoglycosides was evaluated by WST assay. Gap junctions were modulated by transfection of the gap junction protein, connexin 43 (Cx43), use of Cx43 siRNA and gap junction inhibitors. NRK-E52 cells expressed abundant Cx43 and were functionally coupled by gap junctional intercellular communication (GJIC). Exposure of NRK-E52 cells to aminoglycosides, G418 and hygromycin, increased Cx43 phosphorylation and GJIC. The aminoglycosides also decreased cell viability that was prevented by gap junction inhibitors and Cx43 siRNA. LLC-PK1 cells were gap junction-deficient and resistant to aminoglycoside-induced cytotoxicity. Over-expression of a wild-type Cx43 converted LLC-PK1 cells to a drug-sensitive phenotype. The gap junction inhibitor alpha-glycyrrhetinic acid (alpha-GA) activated Akt in NRK-E52 cells. Inhibition of the Akt pathway enhanced cell toxicity to G418 and abolished the protective effects of alpha-GA. In addition, gentamycin-elicited cytotoxicity in NRK-E52 cells was also significantly attenuated by alpha-GA. Gap junctions contributed to the cytotoxic effects of aminoglycosides. Modulation of gap junctions could be a promising approach for prevention and treatment of aminoglycoside-induced renal tubular cell injury.

Coincidence of features of emitted THz electromagnetic wave power form a single Josephson junction and different current components

NASA Astrophysics Data System (ADS)

Hamdipour, Mohammad

2017-12-01

By applying a voltage to a Josephson junction, the charge in superconducting layers (S-layers) will oscillate. Wavelength of the charge oscillations in S-layers is related to external current in junction, by increasing the external current, the wavelength will decrease which cause in some currents the wavelength be incommensurate with width of junction, so the CVC shows Fiske like steps. External current throwing along junction has some components, resistive, capacitive and superconducting current, beside these currents there is a current in lateral direction of junction, (x direction). On the other hand, the emitted electromagnetic wave power in THz region is related to AC component of electric field in junction, which itself is related to charge density in S-layers, which is related to currents in the system. So we expect that features of variation of current components reflect the features of emitted THz power form junction. Here we study in detail the superconductive current in a long Josephson junction (JJ), the current voltage characteristics (CVC) of junction and emitted THz power from the system. Then we compare the results. Comparing the results we see that there is a good qualitative coincidence in features of emitted THz power and supercurrent in junction.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1992-01-01

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

Stress analysis of the Mw 7.4 Armería, Colima, Mexico earthquake of 22 January 2003

NASA Astrophysics Data System (ADS)

Vargas-Bracamontes, D.; Nunez-Cornu, F. J.

2012-12-01

On 22 January 2003 a shallow Mw 7.4 earthquake occurred off the Pacific coast of the state of Colima. This event struck near the towns of Tecomán and Armería in western Mexico where a diffuse triple junction between the North American, Cocos and Rivera plates makes the local tectonic setting highly complex. This earthquake is the largest during the twenty-first century in the area. Some seismic studies of this earthquake indicate that this event occurred on a continental intraplate reverse fault, suggesting that the shock and its aftershocks represent partial accommodation of deformation in the continental crust caused by oblique subduction. In contrast, other works propose that the 2003 Armería earthquake was due to faulting along the subduction interface between the Rivera and North American Plates. We assess the suggested sources of this earthquake in terms of stress models that consider the controversial geometrical features that characterize this tectonic area. Also, we explore the implications for seismic hazard that this event could have caused in the Colima region.

Investigation of Short Channel Effects on Device Performance for 60nm NMOS Transistor

NASA Astrophysics Data System (ADS)

Chinnappan, U.; Sanudin, R.

2017-08-01

In the aggressively scaled complementary metal oxide semiconductor (CMOS) devices, shallower p-n junctions and low sheet resistances are essential for short-channel effect (SCE) control and high device performance. The SCE are attributed to two physical phenomena that are the limitation imposed on electron drift characteristics in channel and the modification of the threshold voltage (Vth) due to the shortening channel length. The decrement of Vth with decrement in gate length is a well-known attribute in SCE known as “threshold voltage roll-off’. In this research, the Technology Computer Aided Design (TCAD) was used to model the SCE phenomenon effect on 60nm n-type metal oxide semiconductor (NMOS) transistor. There are three parameters being investigated, which are the oxide thickness (Tox), gate length (L), acceptor concentration (Na). The simulation data were used to visualise the effect of SCE on the 60nm NMOS transistor. Simulation data suggest that all three parameters have significant effect on Vth, and hence on the transistor performance. It is concluded that there is a trade-off among these three parameters to obtain an optimized transistor performance.

How valid are current diagnostic criteria for dental erosion?

PubMed Central

2008-01-01

In principle, there is agreement about the clinical diagnostic criteria for dental erosion, basically defined as cupping and grooving of the occlusal/incisal surfaces, shallow defects on smooth surfaces located coronal from the enamel–cementum junction with an intact cervical enamel rim and restorations rising above the adjacent tooth surface. This lesion characteristic was established from clinical experience and from observations in a small group of subjects with known exposure to acids rather than from systematic research. Their prevalence is higher in risk groups for dental erosion compared to subjects not particularly exposed to acids, but analytical epidemiological studies on random or cluster samples often fail to find a relation between occurrence or severity of lesions and any aetiological factor. Besides other aspects, this finding might be due to lack of validity with respect to diagnostic criteria. In particular, cupping and grooving might be an effect of abrasion as well as of erosion and their value for the specific diagnosis of erosion must be doubted. Knowledge about the validity of current diagnostic criteria of different forms of tooth wear is incomplete, therefore further research is needed. PMID:18228062

Trigonal Cu2-II-Sn-VI4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics.

PubMed

Hong, Feng; Lin, Wenjun; Meng, Weiwei; Yan, Yanfa

2016-02-14

We propose trigonal Cu2-II-Sn-VI4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant solar cell applications. Through density functional theory calculations, we show that these compounds exhibit similar electronic and optical properties to kesterite Cu2ZnSnS4 (CZTS): high optical absorption with band gaps suitable for efficient single-junction solar cell applications. However, the trigonal Cu2-II-Sn-VI4 compounds exhibit defect properties more suitable for photovoltaic applications than those of CZTS. In CZTS, the dominant defects are the deep acceptors, Cu substitutions on Zn sites, which cause non-radiative recombination and limit the open-circuit voltages of CZTS solar cells. On the contrary, the dominant defects in trigonal Cu2-II-Sn-VI4 are the shallow acceptors, Cu vacancies, similar to those in CuInSe2. Our results suggest that the trigonal Cu2-II-Sn-VI4 quaternary compounds could be promising candidates for efficient earth-abundant thin-film solar cell and photoeletrochemical water-splitting applications.

Specific Cx43 phosphorylation events regulate gap junction turnover in vivo

PubMed Central

Solan, Joell L.; Lampe, Paul D.

2014-01-01

Gap junctions, composed of proteins from the connexin gene family, are highly dynamic structures that are regulated by kinase-mediated signaling pathways and interactions with other proteins. Phosphorylation of Connexin43 (Cx43) at different sites controls gap junction assembly, gap junction size and gap junction turnover. Here we present a model describing how Akt, mitogen activated protein kinase (MAPK) and src kinase coordinate to regulate rapid turnover of gap junctions. Specifically, Akt phosphorylates Cx43 at S373 eliminating interaction with zona occludens-1 (ZO-1) allowing gap junctions to enlarge. Then MAPK and src phosphorylate Cx43 to initiate turnover. We integrate published data with new data to test and refine this model. Finally, we propose that differential coordination of kinase activation and Cx43 phosphorylation controls the specific routes of disassembly, e.g., annular junction formation or gap junctions can potentially “unzip” and be internalized/endocytosed into the cell that produced each connexin. PMID:24508467

Nanotube junctions

DOEpatents

Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

2004-12-28

The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

Nanotube junctions

DOEpatents

Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon Sheng; Zettl, Alexander Karlwalter

2003-01-01

The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping

NASA Astrophysics Data System (ADS)

Park, Jinho; Lee, Jae Hyeong; Lee, Gil-Ho; Takane, Yositake; Imura, Ken-Ichiro; Taniguchi, Takashi; Watanabe, Kenji; Lee, Hu-Jong

2018-02-01

We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current Ic . The product of Ic and the normal-state junction resistance RN , normalized by the zero-temperature gap energy Δ0 of the superconducting electrodes, turns out to be exceptionally large close to 2, an indication of strong Josephson coupling in the SB junction limit. However, Ic shows a temperature dependence that is inconsistent with the conventional short-junction-like behavior based on the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the effects of inhomogeneous carrier doping in graphene near the superconducting contacts, although the junction is in fact in the short-junction limit.

Correlation between the graft-host junction of penetrating keratoplasty by anterior segment-optical coherence tomography and the magnitude of postoperative astigmatism.

PubMed

Nassar, Ghada Azab; Arfeen, Shaimaa Abd El Salam

2017-07-01

This study aimed to evaluate the alignment pattern of the graft-host junction after penetrating keratoplasty (PK) by anterior segment-optical coherence tomography (AS-OCT) and to correlate this pattern with the magnitude of postoperative astigmatism. This retrospective observational study was carried out on forty patients who underwent PK from February 2013 to August 2014. AS-OCT was performed, and the graft-host junctions were classified into well-apposed junction, malapposed junction, and equally apposed junction. Mal-apposition is subdivided into gap and protrusion. The correlations between clinical characteristics, wound profiles from the AS-OCT, and the magnitude of postoperative astigmatism by Sirius camera (Costruzione Strumenti Oftalmici [CSO], Florence, Italy (CSO, Sirius), were analyzed. Graft-host junctions from forty patients were analyzed; 18 eyes had well-apposed junctions, ten eyes had malapposed junctions, and 12 had equally apposed junctions. The mean cylinder was -9.44 ± -4.00D in well-apposed group, -13.40 ± -5.01D in malapposed group, and -4.67 ± -0.94D in equally apposed group. Alignment pattern of the graft-host junction correlated significantly with the magnitude of astigmatism (P = 0.034). Preoperative corneal diseases did not have an effect on the magnitude of astigmatism (P = 0.123). The alignment pattern of the graft-host junction by AS-OCT can explain the postoperative astigmatism after PK where it correlates significantly with the magnitude of astigmatism.

Membrane junctions in Xenopus eggs: their distribution suggests a role in calcium regulation.

PubMed

Gardiner, D M; Grey, R D

1983-04-01

We have observed the presence of membrane junctions formed between the plasma membrane and cortical endoplasmic reticulum of mature, unactivated eggs of xenopus laevis. The parallel, paired membranes of the junction are separated by a 10-mn gap within which electron-dense material is present. This material occurs in patches with an average center-to-center distance of approximately 30 nm. These junctions are rare in immature (but fully grown) oocytes (approximately 2 percent of the plasma membrane is associated with junctions) and increase dramatically during progesterone-induced maturation. Junctions in the mature, unactivated egg are two to three times more abundant in the animal hemisphere (25-30 percent of the plasma membrane associated with junction) as compared with the vegetal hemisphere (10-15 percent). Junction density decreases rapidly to values characteristic of immature oocytes in response to egg activation. The plasma membrane-ER junctions of xenopus eggs are strikingly similar in structure to membrane junctions in muscle cells thought to be essential in the triggering of intracellular calcium release from the sarcoplasmic reticulum. In addition, the junctions' distinctive, animal-vegetal polarity of distribution, their dramatic appearance during maturation, and their disapperance during activation are correlated with previously documented patterns of calcium-mediated events in anuran eggs. We discuss several lines of evidence supporting the hypothesis that these junctions in xenopus eggs are sites that transduce extracellular events into intracellular calcium release during fertilization and activation of development.

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

PubMed

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2012-03-06

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2011-10-18

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, J.M.; Kurtz, S.R.

1992-11-24

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

PubMed

Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

2018-02-08

Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

Imaging snake orbits at graphene n -p junctions

NASA Astrophysics Data System (ADS)

Kolasiński, K.; Mreńca-Kolasińska, A.; Szafran, B.

2017-01-01

We consider conductance mapping of the snake orbits confined along the n -p junction defined in graphene by the electrostatic doping in the quantum Hall regime. We explain the periodicity of conductance oscillations at the magnetic field and the Fermi energy scales by the properties of the n -p junction as a conducting channel. We evaluate the conductance maps for a floating gate scanning the surface of the device. In the quantum Hall conditions the currents flow near the edges of the sample and along the n -p junction. The conductance mapping resolves only the n -p junction and not the edges. The conductance oscillations along the junction are found in the maps with periodicity related to the cyclotron orbits of the scattering current. Stronger probe potentials provide support to localized resonances at one of the sides of the junction with current loops that interfere with the n -p junction currents. The interference results in a series of narrow lines parallel to the junction with positions that strongly depend on the magnetic field through the Aharonov-Bohm effect. The consequences of a limited transparency of finite-width n -p junctions are also discussed.

Geodynamical simulation of the RRF triple junction

NASA Astrophysics Data System (ADS)

Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

2017-12-01

Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

Disruption of gap junctions attenuates aminoglycoside-elicited renal tubular cell injury

PubMed Central

Yao, Jian; Huang, Tao; Fang, Xin; Chi, Yuan; Zhu, Ying; Wan, Yigang; Matsue, Hiroyuki; Kitamura, Masanori

2010-01-01

BACKGROUND AND PURPOSE Gap junctions play important roles in the regulation of cell phenotype and in determining cell survival after various insults. Here, we investigated the role of gap junctions in aminoglycoside-induced injury to renal tubular cells. EXPERIMENTAL APPROACH Two tubular epithelial cell lines NRK-E52 and LLC-PK1 were compared for gap junction protein expression and function by immunofluorescent staining, Western blot and dye transfer assay. Cell viability after exposure to aminoglycosides was evaluated by WST assay. Gap junctions were modulated by transfection of the gap junction protein, connexin 43 (Cx43), use of Cx43 siRNA and gap junction inhibitors. KEY RESULTS NRK-E52 cells expressed abundant Cx43 and were functionally coupled by gap junctional intercellular communication (GJIC). Exposure of NRK-E52 cells to aminoglycosides, G418 and hygromycin, increased Cx43 phosphorylation and GJIC. The aminoglycosides also decreased cell viability that was prevented by gap junction inhibitors and Cx43 siRNA. LLC-PK1 cells were gap junction-deficient and resistant to aminoglycoside-induced cytotoxicity. Over-expression of a wild-type Cx43 converted LLC-PK1 cells to a drug-sensitive phenotype. The gap junction inhibitor α-glycyrrhetinic acid (α-GA) activated Akt in NRK-E52 cells. Inhibition of the Akt pathway enhanced cell toxicity to G418 and abolished the protective effects of α-GA. In addition, gentamycin-elicited cytotoxicity in NRK-E52 cells was also significantly attenuated by α-GA. CONCLUSION AND IMPLICATIONS Gap junctions contributed to the cytotoxic effects of aminoglycosides. Modulation of gap junctions could be a promising approach for prevention and treatment of aminoglycoside-induced renal tubular cell injury. PMID:20649601

Expression pattern of adhesion molecules in junctional epithelium differs from that in other gingival epithelia.

PubMed

Hatakeyama, S; Yaegashi, T; Oikawa, Y; Fujiwara, H; Mikami, T; Takeda, Y; Satoh, M

2006-08-01

The gingival epithelium is the physiologically important interface between the bacterially colonized gingival sulcus and periodontal soft and mineralized connective tissues, requiring protection from exposure to bacteria and their products. However, of the three epithelia comprising the gingival epithelium, the junctional epithelium has much wider intercellular spaces than the sulcular epithelium and oral gingival epithelium. Hence, the aim of the present study was to characterize the cell adhesion structure in the junctional epithelium compared with the other two epithelia. Gingival epithelia excised at therapeutic flap surgery from patients with periodontitis were examined for expression of adhesion molecules by immunofluorescence. In the oral gingival epithelium and sulcular epithelium, but not in the junctional epithelium, desmoglein 1 and 2 in cell-cell contact sites were more abundant in the upper than the suprabasal layers. E-cadherin, the main transmembranous molecule of adherens junctions, was present in spinous layers of the oral gingival epithelium and sulcular epithelium, but was scarce in the junctional epithelium. In contrast, desmoglein 3 and P-cadherin were present in all layers of the junctional epithelium as well as the oral gingival epithelium and sulcular epithelium. Connexin 43 was clearly localized to spinous layers of the oral gingival epithelium, sulcular epithelium and parts of the junctional epithelium. Claudin-1 and occludin were expressed in the cell membranes of a few superficial layers of the oral gingival epithelium. These findings indicated that the junctional epithelium contains only a few desmosomes, composed of only desmoglein 3; adherens junctions are probably absent because of defective E-cadherin. Thus, the anchoring junctions connecting junctional epithelium cells are lax, causing widened intercellular spaces. In contrast, the oral gingival epithelium, which has a few tight junctions, functions as a barrier.

Endoplasmic reticulum-plasma membrane junctions: structure, function and dynamics.

PubMed

Okeke, Emmanuel; Dingsdale, Hayley; Parker, Tony; Voronina, Svetlana; Tepikin, Alexei V

2016-06-01

Endoplasmic reticulum (ER)-plasma membrane (PM) junctions are contact sites between the ER and the PM; the distance between the two organelles in the junctions is below 40 nm and the membranes are connected by protein tethers. A number of molecular tools and technical approaches have been recently developed to visualise, modify and characterise properties of ER-PM junctions. The junctions serve as the platforms for lipid exchange between the organelles and for cell signalling, notably Ca(2+) and cAMP signalling. Vice versa, signalling events regulate the development and properties of the junctions. Two Ca(2+) -dependent mechanisms of de novo formation of ER-PM junctions have been recently described and characterised. The junction-forming proteins and lipids are currently the focus of vigorous investigation. Junctions can be relatively short-lived and simple structures, forming and dissolving on the time scale of a few minutes. However, complex, sophisticated and multifunctional ER-PM junctions, capable of attracting numerous protein residents and other cellular organelles, have been described in some cell types. The road from simplicity to complexity, i.e. the transformation from simple 'nascent' ER-PM junctions to advanced stable multiorganellar complexes, is likely to become an attractive research avenue for current and future junctologists. Another area of considerable research interest is the downstream cellular processes that can be activated by specific local signalling events in the ER-PM junctions. Studies of the cell physiology and indeed pathophysiology of ER-PM junctions have already produced some surprising discoveries, likely to expand with advances in our understanding of these remarkable organellar contact sites. © 2016 The Authors. The Journal of Physiology © 2016 The Physiological Society.

Ferromagnetic Josephson Junctions for Cryogenic Memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Calcium/Ask1/MKK7/JNK2/c-Src signalling cascade mediates disruption of intestinal epithelial tight junctions by dextran sulfate sodium.

PubMed

Samak, Geetha; Chaudhry, Kamaljit K; Gangwar, Ruchika; Narayanan, Damodaran; Jaggar, Jonathan H; Rao, RadhaKrishna

2015-02-01

Disruption of intestinal epithelial tight junctions is an important event in the pathogenesis of ulcerative colitis. Dextran sodium sulfate (DSS) induces colitis in mice with symptoms similar to ulcerative colitis. However, the mechanism of DSS-induced colitis is unknown. We investigated the mechanism of DSS-induced disruption of intestinal epithelial tight junctions and barrier dysfunction in Caco-2 cell monolayers in vitro and mouse colon in vivo. DSS treatment resulted in disruption of tight junctions, adherens junctions and actin cytoskeleton leading to barrier dysfunction in Caco-2 cell monolayers. DSS induced a rapid activation of c-Jun N-terminal kinase (JNK), and the inhibition or knockdown of JNK2 attenuated DSS-induced tight junction disruption and barrier dysfunction. In mice, DSS administration for 4 days caused redistribution of tight junction and adherens junction proteins from the epithelial junctions, which was blocked by JNK inhibitor. In Caco-2 cell monolayers, DSS increased intracellular Ca(2+) concentration, and depletion of intracellular Ca(2+) by 1,2-bis-(o-aminophenoxy)ethane-N,N,N',N'-tetra-acetic acid tetrakis(acetoxymethyl ester) (BAPTA/AM) or thapsigargin attenuated DSS-induced JNK activation, tight junction disruption and barrier dysfunction. Knockdown of apoptosis signal-regulated kinase 1 (Ask1) or MKK7 blocked DSS-induced tight junction disruption and barrier dysfunction. DSS activated c-Src by a Ca2+ and JNK-dependent mechanism. Inhibition of Src kinase activity or knockdown of c-Src blocked DSS-induced tight junction disruption and barrier dysfunction. DSS increased tyrosine phosphorylation of occludin, zonula occludens-1 (ZO-1), E-cadherin and β-catenin. SP600125 abrogated DSS-induced tyrosine phosphorylation of junctional proteins. Recombinant JNK2 induced threonine phosphorylation and auto-phosphorylation of c-Src. The present study demonstrates that Ca(2+)/Ask1/MKK7/JNK2/cSrc signalling cascade mediates DSS-induced tight junction disruption and barrier dysfunction.

Fluorescence recovery after photobleaching reveals regulation and distribution of connexin36 gap junction coupling within mouse islets of Langerhans

PubMed Central

Farnsworth, Nikki L; Hemmati, Alireza; Pozzoli, Marina; Benninger, Richard K P

2014-01-01

The pancreatic islets are central to the maintenance of glucose homeostasis through insulin secretion. Glucose-stimulated insulin secretion is tightly linked to electrical activity in β cells within the islet. Gap junctions, composed of connexin36 (Cx36), form intercellular channels between β cells, synchronizing electrical activity and insulin secretion. Loss of gap junction coupling leads to altered insulin secretion dynamics and disrupted glucose homeostasis. Gap junction coupling is known to be disrupted in mouse models of pre-diabetes. Although approaches to measure gap junction coupling have been devised, they either lack cell specificity, suitable quantification of coupling or spatial resolution, or are invasive. The purpose of this study was to develop fluorescence recovery after photobleaching (FRAP) as a technique to accurately and robustly measure gap junction coupling in the islet. The cationic dye Rhodamine 123 was used with FRAP to quantify dye diffusion between islet β cells as a measure of Cx36 gap junction coupling. Measurements in islets with reduced Cx36 verified the accuracy of this technique in distinguishing between distinct levels of gap junction coupling. Analysis of individual cells revealed that the distribution of coupling across the islet is highly heterogeneous. Analysis of several modulators of gap junction coupling revealed glucose- and cAMP-dependent modulation of gap junction coupling in islets. Finally, FRAP was used to determine cell population specific coupling, where no functional gap junction coupling was observed between α cells and β cells in the islet. The results of this study show FRAP to be a robust technique which provides the cellular resolution to quantify the distribution and regulation of Cx36 gap junction coupling in specific cell populations within the islet. Future studies utilizing this technique may elucidate the role of gap junction coupling in the progression of diabetes and identify mechanisms of gap junction regulation for potential therapies. PMID:25172942

Fluorescence recovery after photobleaching reveals regulation and distribution of connexin36 gap junction coupling within mouse islets of Langerhans.

PubMed

Farnsworth, Nikki L; Hemmati, Alireza; Pozzoli, Marina; Benninger, Richard K P

2014-10-15

The pancreatic islets are central to the maintenance of glucose homeostasis through insulin secretion. Glucose‐stimulated insulin secretion is tightly linked to electrical activity in β cells within the islet. Gap junctions, composed of connexin36 (Cx36), form intercellular channels between β cells, synchronizing electrical activity and insulin secretion. Loss of gap junction coupling leads to altered insulin secretion dynamics and disrupted glucose homeostasis. Gap junction coupling is known to be disrupted in mouse models of pre‐diabetes. Although approaches to measure gap junction coupling have been devised, they either lack cell specificity, suitable quantification of coupling or spatial resolution, or are invasive. The purpose of this study was to develop fluorescence recovery after photobleaching (FRAP) as a technique to accurately and robustly measure gap junction coupling in the islet. The cationic dye Rhodamine 123 was used with FRAP to quantify dye diffusion between islet β cells as a measure of Cx36 gap junction coupling. Measurements in islets with reduced Cx36 verified the accuracy of this technique in distinguishing between distinct levels of gap junction coupling. Analysis of individual cells revealed that the distribution of coupling across the islet is highly heterogeneous. Analysis of several modulators of gap junction coupling revealed glucose‐ and cAMP‐dependent modulation of gap junction coupling in islets. Finally, FRAP was used to determine cell population specific coupling, where no functional gap junction coupling was observed between α cells and β cells in the islet. The results of this study show FRAP to be a robust technique which provides the cellular resolution to quantify the distribution and regulation of Cx36 gap junction coupling in specific cell populations within the islet. Future studies utilizing this technique may elucidate the role of gap junction coupling in the progression of diabetes and identify mechanisms of gap junction regulation for potential therapies.

Calcium Channels and Oxidative Stress Mediate a Synergistic Disruption of Tight Junctions by Ethanol and Acetaldehyde in Caco-2 Cell Monolayers.

PubMed

Samak, Geetha; Gangwar, Ruchika; Meena, Avtar S; Rao, Roshan G; Shukla, Pradeep K; Manda, Bhargavi; Narayanan, Damodaran; Jaggar, Jonathan H; Rao, RadhaKrishna

2016-12-13

Ethanol is metabolized into acetaldehyde in most tissues. In this study, we investigated the synergistic effect of ethanol and acetaldehyde on the tight junction integrity in Caco-2 cell monolayers. Expression of alcohol dehydrogenase sensitized Caco-2 cells to ethanol-induced tight junction disruption and barrier dysfunction, whereas aldehyde dehydrogenase attenuated acetaldehyde-induced tight junction disruption. Ethanol up to 150 mM did not affect tight junction integrity or barrier function, but it dose-dependently increased acetaldehyde-mediated tight junction disruption and barrier dysfunction. Src kinase and MLCK inhibitors blocked this synergistic effect of ethanol and acetaldehyde on tight junction. Ethanol and acetaldehyde caused a rapid and synergistic elevation of intracellular calcium. Calcium depletion by BAPTA or Ca 2+ -free medium blocked ethanol and acetaldehyde-induced barrier dysfunction and tight junction disruption. Diltiazem and selective knockdown of TRPV6 or Ca V 1.3 channels, by shRNA blocked ethanol and acetaldehyde-induced tight junction disruption and barrier dysfunction. Ethanol and acetaldehyde induced a rapid and synergistic increase in reactive oxygen species by a calcium-dependent mechanism. N-acetyl-L-cysteine and cyclosporine A, blocked ethanol and acetaldehyde-induced barrier dysfunction and tight junction disruption. These results demonstrate that ethanol and acetaldehyde synergistically disrupt tight junctions by a mechanism involving calcium, oxidative stress, Src kinase and MLCK.

Assembly of the Escherichia coli RuvABC resolvasome directs the orientation of Holliday junction resolution

PubMed Central

van Gool, Alain J.; Hajibagheri, Nasser M.A.; Stasiak, Andrzej; West, Stephen C.

1999-01-01

Genetic recombination can lead to the formation of intermediates in which DNA molecules are linked by Holliday junctions. Movement of a junction along DNA, by a process known as branch migration, leads to heteroduplex formation, whereas resolution of a junction completes the recombination process. Holliday junctions can be resolved in either of two ways, yielding products in which there has, or has not, been an exchange of flanking markers. The ratio of these products is thought to be determined by the frequency with which the two isomeric forms (conformers) of the Holliday junction are cleaved. Recent studies with enzymes that process Holliday junctions in Escherichia coli, the RuvABC proteins, however, indicate that protein binding causes the junction to adopt an open square-planar configuration. Within such a structure, DNA isomerization can have little role in determining the orientation of resolution. To determine the role that junction-specific protein assembly has in determining resolution bias, a defined in vitro system was developed in which we were able to direct the assembly of the RuvABC resolvasome. We found that the bias toward resolution in one orientation or the other was determined simply by the way in which the Ruv proteins were positioned on the junction. Additionally, we provide evidence that supports current models on RuvABC action in which Holliday junction resolution occurs as the resolvasome promotes branch migration. PMID:10421637

Models and methods for in vitro testing of hepatic gap junctional communication.

PubMed

Maes, Michaël; Yanguas, Sara Crespo; Willebrords, Joost; Vinken, Mathieu

2015-12-25

Inherent to their pivotal roles in controlling all aspects of the liver cell life cycle, hepatocellular gap junctions are frequently disrupted upon impairment of the homeostatic balance, as occurs during liver toxicity. Hepatic gap junctions, which are mainly built up by connexin32, are specifically targeted by tumor promoters and epigenetic carcinogens. This renders inhibition of gap junction functionality a suitable indicator for the in vitro detection of nongenotoxic hepatocarcinogenicity. The establishment of a reliable liver gap junction inhibition assay for routine in vitro testing purposes requires a cellular system in which gap junctions are expressed at an in vivo-like level as well as an appropriate technique to probe gap junction activity. Both these models and methods are discussed in the current paper, thereby focusing on connexin32-based gap junctions. Copyright © 2015 Elsevier B.V. All rights reserved.

Effect of inductive and capacitive coupling on the current–voltage characteristic and electromagnetic radiation from a system of Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahmonov, I. R., E-mail: rahmonov@theor.jinr.ru, E-mail: ilhom-tj@inbox.ru; Shukrinov, Yu. M.; Atanasova, P. Kh.

We have studied the current–voltage characteristic of a system of long Josephson junctions taking into account the inductive and capacitive coupling. The dependence of the average time derivative of the phase difference on the bias current and spatiotemporal dependences of the phase difference and magnetic field in each junction are considered. The possibility of branching of the current–voltage characteristic in the region of zero field step, which is associated with different numbers of fluxons in individual Josephson junctions, is demonstrated. The current–voltage characteristic of the system of Josephson junctions is compared with the case of a single junction, and itmore » is shown that the observed branching is due to coupling between the junctions. The intensity of electromagnetic radiation associated with motion of fluxons is calculated, and the effect of coupling between junctions on the radiation power is analyzed.« less

Varactor with integrated micro-discharge source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.; Manginell, Ronald P.; Moorman, Matthew W.

2016-10-18

An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of themore » np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO).« less

Extension of the ADC Charge-Collection Model to Include Multiple Junctions

NASA Technical Reports Server (NTRS)

Edmonds, Larry D.

2011-01-01

The ADC model is a charge-collection model derived for simple p-n junction silicon diodes having a single reverse-biased p-n junction at one end and an ideal substrate contact at the other end. The present paper extends the model to include multiple junctions, and the goal is to estimate how collected charge is shared by the different junctions.

Cell-specific expression of connexins and evidence of restricted gap junctional coupling between glial cells and between neurons.

PubMed

Rash, J E; Yasumura, T; Dudek, F E; Nagy, J I

2001-03-15

The transmembrane connexin proteins of gap junctions link extracellularly to form channels for cell-to-cell exchange of ions and small molecules. Two primary hypotheses of gap junction coupling in the CNS are the following: (1) generalized coupling occurs between neurons and glia, with some connexins expressed in both neurons and glia, and (2) intercellular junctional coupling is restricted to specific coupling partners, with different connexins expressed in each cell type. There is consensus that gap junctions link neurons to neurons and astrocytes to oligodendrocytes, ependymocytes, and other astrocytes. However, unresolved are the existence and degree to which gap junctions occur between oligodendrocytes, between oligodendrocytes and neurons, and between astrocytes and neurons. Using light microscopic immunocytochemistry and freeze-fracture replica immunogold labeling of adult rat CNS, we investigated whether four of the best-characterized CNS connexins are each present in one or more cell types, whether oligodendrocytes also share gap junctions with other oligodendrocytes or with neurons, and whether astrocytes share gap junctions with neurons. Connexin32 (Cx32) was found only in gap junctions of oligodendrocyte plasma membranes, Cx30 and Cx43 were found only in astrocyte membranes, and Cx36 was only in neurons. Oligodendrocytes shared intercellular gap junctions only with astrocytes, with each oligodendrocyte isolated from other oligodendrocytes except via astrocyte intermediaries. Finally, neurons shared gap junctions only with other neurons and not with glial cells. Thus, the different cell types of the CNS express different connexins, which define separate pathways for neuronal versus glial gap junctional communication.

Regulation of Gap Junction Dynamics by UNC-44/ankyrin and UNC-33/CRMP through VAB-8 in C. elegans Neurons

PubMed Central

Yan, Dong

2016-01-01

Gap junctions are present in both vertebrates and invertebrates from nematodes to mammals. Although the importance of gap junctions has been documented in many biological processes, the molecular mechanisms underlying gap junction dynamics remain unclear. Here, using the C. elegans PLM neurons as a model, we show that UNC-44/ankyrin acts upstream of UNC-33/CRMP in regulation of a potential kinesin VAB-8 to control gap junction dynamics, and loss-of-function in the UNC-44/UNC-33/VAB-8 pathway suppresses the turnover of gap junction channels. Therefore, we first show a signal pathway including ankyrin, CRMP, and kinesin in regulating gap junctions. PMID:27015090

Many-junction photovoltaic device performance under non-uniform high-concentration illumination

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

2017-09-01

A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; Tamboli, Adele C; Warren, Emily L

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

Controlling formation of single-molecule junctions by electrochemical reduction of diazonium terminal groups.

PubMed

Hines, Thomas; Díez-Pérez, Ismael; Nakamura, Hisao; Shimazaki, Tomomi; Asai, Yoshihiro; Tao, Nongjian

2013-03-06

We report controlling the formation of single-molecule junctions by means of electrochemically reducing two axialdiazonium terminal groups on a molecule, thereby producing direct Au-C covalent bonds in situ between the molecule and gold electrodes. We report a yield enhancement in molecular junction formation as the electrochemical potential of both junction electrodes approach the reduction potential of the diazonium terminal groups. Step length analysis shows that the molecular junction is significantly more stable, and can be pulled over a longer distance than a comparable junction created with amine anchoring bonds. The stability of the junction is explained by the calculated lower binding energy associated with the direct Au-C bond compared with the Au-N bond.

MLN0264 in Previously Treated Asian Participants With Advanced Gastrointestinal Carcinoma or Metastatic or Recurrent Gastric or Gastroesophageal Junction Adenocarcinoma Expressing Guanylyl Cyclase C

ClinicalTrials.gov

2017-02-08

Advanced Gastrointestinal Carcinoma; Gastroesophageal Junction Adenocarcinoma; Recurrent Gastric Adenocarcinoma; Recurrent Gastroesophageal Junction Adenocarcinoma; Metastatic Gastric Adenocarcinoma; Metastatic Gastroesophageal Junction Adenocarcinoma; Recurrent Gastrointestinal Carcinoma

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Tight junctions negatively regulate mechanical forces applied to adherens junctions in vertebrate epithelial tissue.

PubMed

Hatte, Guillaume; Prigent, Claude; Tassan, Jean-Pierre

2018-02-05

Epithelia are layers of polarised cells tightly bound to each other by adhesive contacts. Epithelia act as barriers between an organism and its external environment. Understanding how epithelia maintain their essential integrity while remaining sufficiently plastic to allow events such as cytokinesis to take place is a key biological problem. In vertebrates, the remodelling and reinforcement of adherens junctions maintains epithelial integrity during cytokinesis. The involvement of tight junctions in cell division, however, has remained unexplored. Here, we examine the role of tight junctions during cytokinesis in the epithelium of the Xenopus laevis embryo. Depletion of the tight junction-associated proteins ZO-1 and GEF-H1 leads to altered cytokinesis duration and contractile ring geometry. Using a tension biosensor, we show that cytokinesis defects originate from misregulation of tensile forces applied to adherens junctions. Our results reveal that tight junctions regulate mechanical tension applied to adherens junctions, which in turn impacts cytokinesis.This article has an associated First Person interview with the first author of the paper. © 2018. Published by The Company of Biologists Ltd.

Gap junction-mediated intercellular communication in the immune system.

PubMed

Neijssen, Joost; Pang, Baoxu; Neefjes, Jacques

2007-01-01

Immune cells are usually considered non-attached blood cells, which would exclude the formation of gap junctions. This is a misconception since many immune cells express connexin 43 (Cx43) and other connexins and are often residing in tissue. The role of gap junctions is largely ignored by immunologists as is the immune system in the field of gap junction research. Here, the current knowledge of the distribution of connexins and the function of gap junctions in the immune system is discussed. Gap junctions appear to play many roles in antibody productions and specific immune responses and may be important in sensing danger in tissue by the immune system. Gap junctions not only transfer electrical and metabolical but also immunological information in the form of peptides for a process called cross-presentation. This is essential for proper immune responses to viruses and possibly tumours. Until now only 40 research papers on gap junctions in the immune system appeared and this will almost certainly expand with the increased mutual interest between the fields of immunology and gap junction research.

76 FR 40293 - Proposed Amendment of Class D and Modification of Class E Airspace; Grand Junction, CO

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-08

... Junction, Walker Field. DATES: Comments must be received on or before August 22, 2011. ADDRESSES: Send... E airspace areas to update the airport name from Grand Junction, Walker Field, to Grand Junction...

76 FR 56966 - Amendment of Class D and Modification of Class E Airspace; Grand Junction, CO

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-15

... and Class E airspace to update the airport name from Grand Junction, Walker Field. DATES: Effective... airspace to update the airport name from Grand Junction, Walker Field, to Grand Junction Regional Airport...

Holographic s-wave and p-wave Josephson junction with backreaction

NASA Astrophysics Data System (ADS)

Wang, Yong-Qiang; Liu, Shuai

2016-11-01

In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

Tight junctions and the modulation of barrier function in disease

PubMed Central

2008-01-01

Tight junctions create a paracellular barrier in epithelial and endothelial cells protecting them from the external environment. Two different classes of integral membrane proteins constitute the tight junction strands in epithelial cells and endothelial cells, occludin and members of the claudin protein family. In addition, cytoplasmic scaffolding molecules associated with these junctions regulate diverse physiological processes like proliferation, cell polarity and regulated diffusion. In many diseases, disruption of this regulated barrier occurs. This review will briefly describe the molecular composition of the tight junctions and then present evidence of the link between tight junction dysfunction and disease. PMID:18415116

Multifluxon dynamics in driven Josephson junctions

NASA Astrophysics Data System (ADS)

Lawrence, Albert; Kim, Nung Soo; McDaniel, James; Jack, Michael

1985-06-01

The dynamics of fluxons in a long Josephson junction driven by time-varying nonuniform bias currents are described by a generalization of the sine-Gordon equation. This equation has solitary wave solutions which correspond to current vortices or quantized packets of magnetic flux in the junction. As with the sine-Gordon equation, multifluxon solutions may be demonstrated for the long Josephson junction. Our numerical calculations show that several fluxons may be launched or annihilated at the end of a junction. We also show multiple steady state conditions which correspond to one or more flux quanta trapped in the junction.

Garlic (Allium sativum) feeding impairs Sertoli cell junctional proteins in male Wistar rat testis: microscopy study.

PubMed

Hammami, I; Nahdi, A; Atig, F; El May, A; El May, M V

2016-12-01

Sertoli cell junctions, such as adhesion junction (AJ), gap junction (GJ) and tight junction (TJ), are important for maintaining spermatogenesis. In previous studies, we showed the inhibitory effect of crude garlic (Allium sativum, As) on spermatogenesis and steroidogenesis. The aim of this work was to complete our investigation on the impact of this plant, especially on Sertoli cell junctional proteins (SCJPs). During 1 month, 24 male rats were divided into groups: group control (0% of As) and treated groups fed 5%, 10% and 15% of As. Light and electron microscopy observations were performed to localise junctional proteins: connexin-43, Zona Occluding-1 and N-cadherin (immunohistochemistry) and to describe junctions. We showed that the specific cells involved in the localisation of the SCJP were similar in both control and treated groups, but with different immunoreactivity intensity between them. The electron microscopy observation focused on TJs between Sertoli cells, constituting the blood-testis barrier, showed ultrastructural changes such as fragmentation of TJs between adjacent Sertoli cell membranes and dilatation of rough endoplasmic reticulum saccules giving an aspect of scale to these junctions. We concluded that crude garlic consumption during 1 month induces perturbations on Sertoli cell junctions. These alterations can explain apoptosis in testicular germ cells previously showed. © 2016 Blackwell Verlag GmbH.

Neisseria gonorrhoeae breaches the apical junction of polarized epithelial cells for transmigration by activating EGFR

PubMed Central

Edwards, Vonetta L.; Wang, Liang-Chun; Dawson, Valerie; Stein, Daniel C.; Song, Wenxia

2017-01-01

Summary Neisseria gonorrhoeae initiates infection at the apical surface of columnar endocervical epithelial cells in the female reproductive tract. These cells provide a physical barrier against pathogens by forming continuous apical junctional complexes between neighbouring cells. This study examines the interaction of gonococci (GC) with polarized epithelial cells. We show that viable GC preferentially localize at the apical side of the cell–cell junction in polarized endometrial and colonic epithelial cells, HEC-1-B and T84. In GC-infected cells, continuous apical junctional complexes are disrupted, and the junction-associated protein β-catenin is redistributed from the apical junction to the cytoplasm and to GC adherent sites; however, overall cellular levels remain unchanged. This redistribution of junctional proteins is associated with a decrease in the ‘fence’ function of the apical junction but not its ‘gate’ function. Disruption of the apical junction by removing calcium increases GC transmigration across the epithelial monolayer. GC inoculation induces the phosphorylation of both epidermal growth factor receptor (EGFR) and β-catenin, while inhibition of EGFR kinase activity significantly reduces both GC-induced β-catenin redistribution and GC transmigration. Therefore, the gonococcus is capable of weakening the apical junction and polarity of epithelial cells by activating EGFR, which facilitates GC transmigration across the epithelium. PMID:23279089

Characterization of the column and autocellular junctions that define the vasculature of gill lamellae.

PubMed

Kato, Akira; Nakamura, Korefumi; Kudo, Hisayuki; Tran, Yen Ha; Yamamoto, Yoko; Doi, Hiroyuki; Hirose, Shigehisa

2007-09-01

Novel adhesion junctions have been characterized that are formed at the interface between pillar cells and collagen columns, both of which are essential constituents of the gill lamellae in fish. We termed these junctions the "column junction" and "autocellular junction" and determined their molecular compositions by immunofluorescence microscopy using pufferfish. We visualized collagen columns by concanavalin A staining and found that the components of integrin-mediated cell-matrix adhesion, such as talin, vinculin, paxillin, and fibronectin, were concentrated on plasma membranes surrounding collagen columns (column membranes). This connection is analogous to the focal adhesion of cultured mammalian cells, dense plaque of smooth muscle cells, and myotendinous junction of skeletal muscle cells. We named this connection the "column junction." In the cytoplasm near the column, actin fibers, actinin, and a phosphorylated myosin light chain of 20 kDa are densely located, suggesting the contractile nature of pillar cells. The membrane infoldings surrounding the collagen columns were found to be connected by the autocellular junction, whose components are highly tyrosine-phosphorylated and contain the tight junction protein ZO-1. This study represents the first molecular characterization and fluorescence visualization of the column and autocellular junctions involved in both maintaining structural integrity and the hemodynamics of the branchial lamellae.

Tight junctions and human diseases.

PubMed

Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

2003-09-01

Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

Synaptopodin couples epithelial contractility to α-actinin-4–dependent junction maturation

PubMed Central

Kannan, Nivetha

2015-01-01

The epithelial junction experiences mechanical force exerted by endogenous actomyosin activities and from interactions with neighboring cells. We hypothesize that tension generated at cell–cell adhesive contacts contributes to the maturation and assembly of the junctional complex. To test our hypothesis, we used a hydraulic apparatus that can apply mechanical force to intercellular junction in a confluent monolayer of cells. We found that mechanical force induces α-actinin-4 and actin accumulation at the cell junction in a time- and tension-dependent manner during junction development. Intercellular tension also induces α-actinin-4–dependent recruitment of vinculin to the cell junction. In addition, we have identified a tension-sensitive upstream regulator of α-actinin-4 as synaptopodin. Synaptopodin forms a complex containing α-actinin-4 and β-catenin and interacts with myosin II, indicating that it can physically link adhesion molecules to the cellular contractile apparatus. Synaptopodin depletion prevents junctional accumulation of α-actinin-4, vinculin, and actin. Knockdown of synaptopodin and α-actinin-4 decreases the strength of cell–cell adhesion, reduces the monolayer permeability barrier, and compromises cellular contractility. Our findings underscore the complexity of junction development and implicate a control process via tension-induced sequential incorporation of junctional components. PMID:26504173

Magmatic tectonic effects of high thermal regime at the site of active ridge subduction: the Chile Triple Junction model

NASA Astrophysics Data System (ADS)

Lagabrielle, Yves; Guivel, Christèle; Maury, René C.; Bourgois, Jacques; Fourcade, Serge; Martin, Hervé

2000-11-01

High thermal gradients are expected to be found at sites of subduction of very young oceanic lithosphere and more particularly at ridge-trench-trench (RTT) triple junctions, where active oceanic spreading ridges enter a subduction zone. Active tectonics, associated with the emplacement of two main types of volcanic products, (1) MORB-type magmas, and (2) calc-alkaline acidic magmas in the forearc, also characterize these plate junction domains. In this context, MORB-type magmas are generally thought to derive from the buried active spreading center subducted at shallow depths, whereas the origin of calc-alkaline acidic magmas is more problematic. One of the best constrained examples of ridge-trench interaction is the Chile Triple Junction (CTJ) located southwest of the South American plate at 46°12'S, where the active Chile spreading center enters the subduction zone. In this area, there is a clear correlation between the emplacement of magmatic products and the migration of the triple junction along the active margin. The CTJ lava population is bimodal, with mafic to intermediate lavas (48-56% SiO 2) and acidic lavas ranging from dacites to rhyolites (66-73% SiO 2). Previous models have shown that partial melting of oceanic crust plus 10-20% of sediments, leaving an amphibole- and plagioclase-rich residue, is the only process that may account for the genesis of acidic magmas. Due to special plate geometry in the CTJ area, a given section of the margin may be successively affected by the passage of several ridge segments. We emphasize that repeated passages will lead to the development of very high thermal gradients allowing melting of rocks of oceanic origin at temperatures of 800-900°C and low pressures, corresponding to depths of 10-20 km depth only. In addition, the structure of the CTJ forearc domain is dominated by horizontal displacements and tilting of crustal blocks along a network of strike-slip faults. The occurrence of such a deformed domain implies that an important tectonic coupling may exist between the upper and the lower plates leading to the partitioning of the continental lithosphere and to the tectonic underplating of very young oceanic lithosphere below the continental wedge. We assume that in the case of the CTJ, the uncommon situation of three successive ridge segments entering the trench at 2-3 Ma intervals only resulted in a strong and finally long-lived thermal anomaly. This anomaly caused remelting of underplated portions of very young, still hot oceanic lithosphere. Only particular geometrical RTT configurations are able to produce such features. These include linear continental margin, short ridge segments slightly oblique to the trench and short transform faults. Finally, the CTJ example shows that a possible scenario for the origin of calc-alkaline acidic rocks in the near-trench region involves coeval tectonic coupling and repeated passage of thermal anomalies due to successive subduction of short ridge segments. Therefore, the local abundance of calc-alkaline acidic rocks, associated with MORB-type lavas in ancient series, could be the tracer of plate tectonic configurations involving the subduction of short ridge segments in a relatively short duration.

Analyzing phorbol ester effects on gap junctional communication: a dramatic inhibition of assembly

PubMed Central

1994-01-01

The effect of 12-O-tetradeconylphorbol-13-acetate (TPA) on gap junction assembly between Novikoff hepatoma cells was examined. Cells were dissociated with EDTA to single cells and then reaggregated to form new junctions. When TPA (25 nM) was added to the cells at the onset of the 60-min reaggregation, dye transfer was detected at only 0.6% of the cell-cell interfaces compared to 72% for the untreated control and 74% for 4-alpha TPA, an inactive isomer of TPA. Freeze-fracture electron microscopy of reaggregated control cells showed interfaces containing an average of more than 600 aggregated intramembranous gap junction particles, while TPA-treated cells had no gap junctions. However, Lucifer yellow dye transfer between nondissociated cells via gap junctions was unaffected by 60 min of TPA treatment. Therefore, TPA dramatically inhibited gap junction assembly but did not alter channel gating nor enhance disassembly of preexisting gap junction structures. Short term TPA treatment (< 30 min) increased phosphorylation of the gap junction protein molecular weight of 43,000 (Cx43), but did not change the cellular level of Cx43. Cell surface biotinylation experiments suggested that TPA did not substantially reduce the plasma membrane concentration of Cx43. Therefore, the simple presence of Cx43 in the plasma membrane is not sufficient for gap junction assembly, and protein kinase C probably exerts an effect on assembly of gap junctions at the plasma membrane level. PMID:7806568

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

NASA Astrophysics Data System (ADS)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Shear zone junctions: Of zippers and freeways

NASA Astrophysics Data System (ADS)

Passchier, Cees W.; Platt, John P.

2017-02-01

Ductile shear zones are commonly treated as straight high-strain domains with uniform shear sense and characteristic curved foliation trails, bounded by non-deforming wall rock. Many shear zones, however, are branched, and if movement on such branches is contemporaneous, the resulting shape can be complicated and lead to unusual shear sense arrangement and foliation geometries in the wall rock. For Y-shaped shear zone triple junctions with three joining branches and transport direction at a high angle to the branchline, only eight basic types of junction are thought to be stable and to produce significant displacement. The simplest type, called freeway junctions, have similar shear sense in all three branches. The other types show joining or separating behaviour of shear zone branches similar to the action of a zipper. Such junctions may have shear zone branches that join to form a single branch (closing zipper junction), or a single shear zone that splits to form two branches, (opening zipper junction). All categories of shear zone junctions show characteristic foliation patterns and deflection of markers in the wall rock. Closing zipper junctions are unusual, since they form a non-active zone with opposite deflection of foliations in the wall rock known as an extraction fault or wake. Shear zipper junctions can form domains of overprinting shear sense along their flanks. A small and large field example are given from NE Spain and Eastern Anatolia. The geometry of more complex, 3D shear zone junctions with slip parallel and oblique to the branchline is briefly discussed.

Justification of Structural and Technological Solutions on Junction Perfecting on Permyakova and Shirotnaya Streets Intersection in Tyumen

NASA Astrophysics Data System (ADS)

Sannikov, S. P.; Timohovetz, V. D.; Kuzuek, A. Y.

2017-11-01

This article presents the justification of structurally-technological decisions on a junction perfecting on the intersection of Permyakova and Shirotnaya Streets in Tyumen. The authors made a comparative analysis of typical road junctions. Based on the comparison, the engineering decisions were made for an individual type of transport junctions. Several options of individual design were proposed and analyzed and three most suitable types for the road junctions were offered. On the basis of a multilateral studying and evaluation of the developed transport the article further proposed a transport junction with change-side traffic. The use of this type of intersection will increase the road junction capacity, reduce the number of accidents due to conflicting flows reduction which, in its turn, will increase the speed of cars.

Switching and Rectification in Carbon-Nanotube Junctions

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Andriotis, Antonis N.; Menon, Madhu; Chernozatonskii, Leonid

2003-01-01

Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.

Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

PubMed

Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

2012-07-01

Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewandowski, S.J.

1991-04-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-{ital T}{sub {ital c}} superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming amore » series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-{ital T}{sub {ital c}} materials are pointed out as a potential source of additional noise.« less

The prevalence of increased proximal junctional flexion following posterior instrumentation and arthrodesis for adolescent idiopathic scoliosis.

PubMed

Hollenbeck, S Matt; Glattes, R Christopher; Asher, Marc A; Lai, Sue Min; Burton, Douglas C

2008-07-01

Retrospective case series. To determine the prevalence of proximal junctional sagittal plane flexion increase after posterior instrumentation and arthrodesis. Increased flexion proximal to the junction of the instrumented and fused spinal region with the adjacent mobile spine seems to be a relatively recent observation, may be increasing, and is occasionally problematic. The proximal junctional sagittal angulation 2 motion segments above the upper end instrumentation levels was measured on lateral standing preoperative and follow-up radiographs. One hundred seventy-four of 208 consecutive patients (84%) at an average radiograph follow-up of 4.9 +/- 2.73 years had increased proximal junctional flexion in 9.2%. The preoperative junctional measurements were normal for both normal and increased flexion groups. At follow-up, proximal junctional flexion had increased significantly more in the increased flexion group (2.1 degrees vs. 14.1 degrees , P < 0.0001). None of the possible risk factors studied, including demographic comparisons, Lenke classification (including lumbar and sagittal modifiers), end-instrumented vertebrae, end vertebra anchor configurations, surgical sequence, additional anterior surgery, rib osteotomies, and instrumentation length, were significantly associated with increased proximal junctional flexion at follow-up. Lenke 6 curves were at marginal risk of increased proximal junctional flexion (P = 0.0108). There were no differences between the groups in total Scoliosis Research Society-22r scores at an average follow-up of 8.0 +/- 3.74 years. No patient had additional surgery related to increased proximal junctional flexion. The prevalence of increased proximal junctional flexion was 9.2%. No significant risk factors were identified. Total Scoliosis Research Society-22r scores were similar for groups with normal and increased proximal junctional flexion at follow-up.

High voltage series connected tandem junction solar battery

DOEpatents

Hanak, Joseph J.

1982-01-01

A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

CHLORAL HYDRATE DECREASES GAP JUNCTION COMMUNICATION IN RAT LIVER EPITHELIAL CELLS

EPA Science Inventory

Chloral hydrate decreases gap junction communication in rat liver epithelial cells

Gap junction communication (GJC) is involved in controlling cell proliferation and differentiation. Connexins (Cx) that make up these junctions are composed of a closely related group of m...

Monocytic cell junction proteins serve important roles in atherosclerosis via the endoglin pathway

PubMed Central

Chen, Lina; Chen, Zhongliang; Ge, Menghua; Tang, Oushan; Cheng, Yinhong; Zhou, Haoliang; Shen, Yu; Qin, Fengming

2017-01-01

The formation of atherosclerosis is recognized to be caused by multiple factors including pathogenesis in monocytes during inflammation. The current study provided evidence that monocytic junctions were significantly altered in patients with atherosclerosis, which suggested an association between cell junctions and atherosclerosis. Claudin-1, occludin-1 and ZO-1 were significantly enhanced in atherosclerosis, indicating that the tight junction pathway was activated during the pathogenesis of atherosclerosis. In addition, the gene expression of 5 connexin members involved in the gap junction pathway were quantified, indicating that connexin 43 and 46 were significantly up-regulated in atherosclerosis. Furthermore, inflammatory factors including endoglin and SMAD were observed, suggesting that immune regulative factors were down-regulated in this pathway. Silicon-based analysis additionally identified that connexins and tight junctions were altered in association with monocytic inflammation regulations, endoglin pathway. The results imply that reduced expression of the immune regulation pathway in monocytes is correlated with the generation of gap junctions and tight junctions which serve important roles in atherosclerosis. PMID:28901429

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

PubMed Central

Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

2015-01-01

The multi-junction concept is the most relevant approach to overcome the Shockley–Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies. PMID:26177808

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

PubMed

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

Direct analysis of Holliday junction resolving enzyme in a DNA origami nanostructure.

PubMed

Suzuki, Yuki; Endo, Masayuki; Cañas, Cristina; Ayora, Silvia; Alonso, Juan C; Sugiyama, Hiroshi; Takeyasu, Kunio

2014-06-01

Holliday junction (HJ) resolution is a fundamental step for completion of homologous recombination. HJ resolving enzymes (resolvases) distort the junction structure upon binding and prior cleavage, raising the possibility that the reactivity of the enzyme can be affected by a particular geometry and topology at the junction. Here, we employed a DNA origami nano-scaffold in which each arm of a HJ was tethered through the base-pair hybridization, allowing us to make the junction core either flexible or inflexible by adjusting the length of the DNA arms. Both flexible and inflexible junctions bound to Bacillus subtilis RecU HJ resolvase, while only the flexible junction was efficiently resolved into two duplexes by this enzyme. This result indicates the importance of the structural malleability of the junction core for the reaction to proceed. Moreover, cleavage preferences of RecU-mediated reaction were addressed by analyzing morphology of the reaction products. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

Advance of Mechanically Controllable Break Junction for Molecular Electronics.

PubMed

Wang, Lu; Wang, Ling; Zhang, Lei; Xiang, Dong

2017-06-01

Molecular electronics stands for the ultimate size of functional elements, keeping up with an unstoppable trend over the past few decades. As a vital component of molecular electronics, single molecular junctions have attracted significant attention from research groups all over the world. Due to its pronounced superiority, the mechanically controllable break junctions (MCBJ) technique has been widely applied to characterize the dynamic performance of single molecular junctions. This review presents a system analysis for single-molecule junctions and offers an overview of four test-beds for single-molecule junctions, thus offering more insight into the mechanisms of electron transport. We mainly focus on the development of state-of-the-art mechanically controlled break junctions. The three-terminal gated MCBJ approaches are introduced to manipulate the electron transport of molecules, and MCBJs are combined with characterization techniques. Additionally, applications of MCBJs and remarkable properties of single molecules are addressed. Finally, the challenges and perspective for the mechanically controllable break junctions technique are provided.

Myosin-dependent remodeling of adherens junctions protects junctions from Snail-dependent disassembly

PubMed Central

Weng, Mo

2016-01-01

Although Snail is essential for disassembly of adherens junctions during epithelial–mesenchymal transitions (EMTs), loss of adherens junctions in Drosophila melanogaster gastrula is delayed until mesoderm is internalized, despite the early expression of Snail in that primordium. By combining live imaging and quantitative image analysis, we track the behavior of E-cadherin–rich junction clusters, demonstrating that in the early stages of gastrulation most subapical clusters in mesoderm not only persist, but move apically and enhance in density and total intensity. All three phenomena depend on myosin II and are temporally correlated with the pulses of actomyosin accumulation that drive initial cell shape changes during gastrulation. When contractile myosin is absent, the normal Snail expression in mesoderm, or ectopic Snail expression in ectoderm, is sufficient to drive early disassembly of junctions. In both cases, junctional disassembly can be blocked by simultaneous induction of myosin contractility. Our findings provide in vivo evidence for mechanosensitivity of cell–cell junctions and imply that myosin-mediated tension can prevent Snail-driven EMT. PMID:26754645

ER-plasma membrane junctions: Why and how do we study them?

PubMed

Chang, Chi-Lun; Chen, Yu-Ju; Liou, Jen

2017-09-01

Endoplasmic reticulum (ER)-plasma membrane (PM) junctions are membrane microdomains important for communication between the ER and the PM. ER-PM junctions were first reported in muscle cells in 1957, but mostly ignored in non-excitable cells due to their scarcity and lack of functional significance. In 2005, the discovery of stromal interaction molecule 1 (STIM1) mediating a universal Ca 2+ feedback mechanism at ER-PM junctions in mammalian cells led to a resurgence of research interests toward ER-PM junctions. In the past decade, several major advancements have been made in this emerging topic in cell biology, including the generation of tools for labeling ER-PM junctions and the unraveling of mechanisms underlying regulation and functions of ER-PM junctions. This review summarizes early studies, recently developed tools, and current advances in the characterization and understanding of ER-PM junctions. This article is part of a Special Issue entitled: Membrane Contact Sites edited by Christian Ungermann and Benoit Kornmann. Copyright © 2017 Elsevier B.V. All rights reserved.

Electronic and mechanical characteristics of stacked dimer molecular junctions.

PubMed

Magyarkuti, András; Adak, Olgun; Halbritter, Andras; Venkataraman, Latha

2018-02-15

Break-junction measurements are typically aimed at characterizing electronic properties of single molecules bound between two metal electrodes. Although these measurements have provided structure-function relationships for such devices, there is little work that studies the impact of molecule-molecule interactions on junction characteristics. Here, we use a scanning tunneling microscope based break-junction technique to study pi-stacked dimer junctions formed with two amine-terminated conjugated molecules. We show that the conductance, force and flicker noise of such dimers differ dramatically when compared with the corresponding monomer junctions and discuss the implications of these results on intra- and inter-molecular charge transport.

Experiments and 3D simulations of flow structures in junctions and their influence on location of flowmeters.

PubMed

Mignot, E; Bonakdari, H; Knothe, P; Lipeme Kouyi, G; Bessette, A; Rivière, N; Bertrand-Krajewski, J-L

2012-01-01

Open-channel junctions are common occurrences in sewer networks and flow rate measurement often occurs near these singularities. Local flow structures are 3D, impact on the representativeness of the local flow measurements and thus lead to deviations in the flow rate estimation. The present study aims (i) to measure and simulate the flow pattern in a junction flow, (ii) to analyse the impact of the junction on the velocity distribution according to the distance from the junction and thus (iii) to evaluate the typical error derived from the computation of the flow rate close to the junction.

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Junction detection and pathway selection

NASA Astrophysics Data System (ADS)

Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

1992-02-01

The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

NASA Astrophysics Data System (ADS)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

2017-09-01

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE PAGES

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius; ...

2017-08-14

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the recordmore » III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.« less

Precision measurement with an optical Josephson junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ng, H. T.; Burnett, K.; Dunningham, J. A.

2007-06-15

We present a theoretical study of a type of Josephson device, the so-called 'optical Josephson junction' [Y. Shin et al. Phys. Rev. Lett. 95, 170402 (2005).]. In this device, two condensates are optically coupled through a waveguide by a pair of Bragg beams. This optical Josephson junction differs from the usual Josephson junction where condensates are weakly coupled by tunneling through a barrier. We discuss the use of this optical Josephson junction, for making precision measurements.

Superconducting Quantum Interference Devices for the Detection of Magnetic Flux and Application to Airborne High Frequency Direction Finding

DTIC Science & Technology

2015-03-26

junction [29]. • The Resistively-Shunted- Junction (RSJ) Model • The Tunnel - Junction -Microscopic (TJM) Model • The Nonlinear...Resistive (RSJN) Model These circuit representations describe the junction using a parallel configuration of a resistor, noise current source, and a...solution for the Josephson junction IVP model equation for the noise -free case, in = 0. The thermal noise current is set to zero to exclude noise

Functional assessment of gap junctions in monolayer and three-dimensional cultures of human tendon cells using fluorescence recovery after photobleaching

PubMed Central

Kuzma-Kuzniarska, Maria; Yapp, Clarence; Pearson-Jones, Thomas W.; Jones, Andrew K.; Hulley, Philippa A.

2014-01-01

Abstract. Gap junction-mediated intercellular communication influences a variety of cellular activities. In tendons, gap junctions modulate collagen production, are involved in strain-induced cell death, and are involved in the response to mechanical stimulation. The aim of the present study was to investigate gap junction-mediated intercellular communication in healthy human tendon-derived cells using fluorescence recovery after photobleaching (FRAP). The FRAP is a noninvasive technique that allows quantitative measurement of gap junction function in living cells. It is based on diffusion-dependent redistribution of a gap junction-permeable fluorescent dye. Using FRAP, we showed that human tenocytes form functional gap junctions in monolayer and three-dimensional (3-D) collagen I culture. Fluorescently labeled tenocytes following photobleaching rapidly reacquired the fluorescent dye from neighboring cells, while HeLa cells, which do not communicate by gap junctions, remained bleached. Furthermore, both 18 β-glycyrrhetinic acid and carbenoxolone, standard inhibitors of gap junction activity, impaired fluorescence recovery in tendon cells. In both monolayer and 3-D cultures, intercellular communication in isolated cells was significantly decreased when compared with cells forming many cell-to-cell contacts. In this study, we used FRAP as a tool to quantify and experimentally manipulate the function of gap junctions in human tenocytes in both two-dimensional (2-D) and 3-D cultures. PMID:24390370

Transparent contacts for stacked compound photovoltaic cells

DOEpatents

Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

2016-11-29

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

Fabrication and characterization of graphene/molecule/graphene vertical junctions with aryl alkane monolayers

NASA Astrophysics Data System (ADS)

Jeong, Inho; Song, Hyunwook

2017-11-01

In this study, we fabricated and characterized graphene/molecule/graphene (GMG) vertical junctions with aryl alkane monolayers. The constituent molecules were chemically self-assembled via electrophilic diazonium reactions into a monolayer on the graphene bottom electrode, while the other end physically contacted the graphene top electrode. A full understanding of the transport properties of molecular junctions is a key step in the realization of molecular-scale electronic devices and requires detailed microscopic characterization of the junction's active region. Using a multiprobe approach combining a variety of transport techniques, we elucidated the transport mechanisms and electronic structure of the GMG junctions, including temperature- and length-variable transport measurements, and transition voltage spectroscopy. These results provide criteria to establish a valid molecular junction and to determine the most probable transport characteristics of the GMG junctions.

Breaking into the epithelial apical–junctional complex — news from pathogen hackers

PubMed Central

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2012-01-01

The epithelial apical–junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical–junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical–junctional complex of the Ig superfamily — junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor — are important regulators of junction structure and function and represent critical targets of microbial virulence gene products. PMID:15037310

Breaking into the epithelial apical-junctional complex--news from pathogen hackers.

PubMed

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2004-02-01

The epithelial apical-junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical-junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical-junctional complex of the Ig superfamily--junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor--are important regulators of junction structure and function and represent critical targets of microbial virulence gene products.

Evolutionary dynamics and sites of illegitimate recombination revealed in the interspersion and sequence junctions of two nonhomologous satellite DNAs in cactophilic Drosophila species.

PubMed

Kuhn, G C S; Teo, C H; Schwarzacher, T; Heslop-Harrison, J S

2009-05-01

Satellite DNA (satDNA) is a major component of genomes but relatively little is known about the fine-scale organization of unrelated satDNAs residing at the same chromosome location, and the sequence structure and dynamics of satDNA junctions. We studied the organization and sequence junctions of two nonhomologous satDNAs, pBuM and DBC-150, in three species from the neotropical Drosophila buzzatii cluster (repleta group). In situ hybridization to microchromosomes, interphase nuclei and extended DNA fibers showed frequent interspersion of the two satellites in D. gouveai, D. antonietae and, to a lesser extent, D. seriema. We isolated by PCR six pBuM x DBC-150 junctions: four are exclusive to D. gouveai and two are exclusive to D. antonietae. The six junction breakpoints occur at different positions within monomers, suggesting independent origin. Four junctions showed abrupt transitions between the two satellites, whereas two junctions showed a distinct 10 bp tandem duplication before the junction. Unlike pBuM, DBC-150 junction repeats are more variable than randomly cloned monomers and showed diagnostic features in common to a 3-monomer higher-order repeat seen in the sister species D. serido. The high levels of interspersion between pBuM and DBC-150 repeats suggest extensive rearrangements between the two satellites, maybe favored by specific features of the microchromosomes. Our interpretation is that the junctions evolved by multiples events of illegitimate recombination between nonhomologous satDNA repeats, with subsequent rounds of unequal crossing-over expanding the copy number of some of the junctions.

Interferon-gamma inhibits intestinal restitution by preventing gap junction communication between enterocytes.

PubMed

Leaphart, Cynthia L; Qureshi, Faisal; Cetin, Selma; Li, Jun; Dubowski, Theresa; Baty, Catherine; Batey, Catherine; Beer-Stolz, Donna; Guo, Fengli; Murray, Sandra A; Hackam, David J

2007-06-01

Necrotizing enterocolitis (NEC) is characterized by interferon-gamma (IFN-gamma) release and inadequate intestinal restitution. Because enterocytes migrate together, mucosal healing may require interenterocyte communication via connexin 43-mediated gap junctions. We hypothesize that enterocyte migration requires interenterocyte communication, that IFN impairs migration by impairing connexin 43, and that impaired healing during NEC is associated with reduced gap junctions. NEC was induced in Swiss-Webster or IFN(-/-) mice, and restitution was determined in the presence of the gap junction inhibitor oleamide, or via time-lapse microscopy of IEC-6 cells. Connexin 43 expression, trafficking, and localization were detected in cultured or primary enterocytes or mouse or human intestine by confocal microscopy and (35)S-labeling, and gap junction communication was assessed using live microscopy with oleamide or connexin 43 siRNA. Enterocytes expressed connexin 43 in vitro and in vivo, and exchanged fluorescent dye via gap junctions. Gap junction inhibition significantly reduced enterocyte migration in vitro and in vivo. NEC was associated with IFN release and loss of enterocyte connexin 43 expression. IFN inhibited enterocyte migration by reducing gap junction communication through the dephosphorylation and internalization of connexin 43. Gap junction inhibition significantly increased NEC severity, whereas reversal of the inhibitory effects of IFN on gap junction communication restored enterocyte migration after IFN exposure. Strikingly, IFN(-/-) mice were protected from the development of NEC, and showed restored connexin 43 expression and intestinal restitution. IFN inhibits enterocyte migration by preventing interenterocyte gap junction communication. Connexin 43 loss may provide insights into the development of NEC, in which restitution is impaired.

Regulation of tight junction assembly and epithelial morphogenesis by the heat shock protein Apg-2

PubMed Central

Aijaz, Saima; Sanchez-Heras, Elena; Balda, Maria S; Matter, Karl

2007-01-01

Background Tight junctions are required for epithelial barrier formation and participate in the regulation of signalling mechanisms that control proliferation and differentiation. ZO-1 is a tight junction-associated adaptor protein that regulates gene expression, junction assembly and epithelial morphogenesis. We have previously demonstrated that the heat shock protein Apg-2 binds ZO-1 and thereby regulates its role in cell proliferation. Here, we addressed the question whether Apg-2 is also important for junction formation and epithelial morphogenesis. Results We demonstrate that depletion of Apg-2 by RNAi in MDCK cells did not prevent formation of functional tight junctions. Similar to ZO-1, however, reduced expression of Apg-2 retarded de novo junction assembly if analysed in a Ca-switch model. Formation of functional junctions, as monitored by measuring transepithelial electrical resistance, and recruitment of tight and adherens junction markers were retarded. If cultured in three dimensional extracellular matrix gels, Apg-2 depleted cells, as previously shown for ZO-1 depleted cells, did not form hollow polarised cysts but poorly organised, irregular structures. Conclusion Our data indicate that Apg-2 regulates junction assembly and is required for normal epithelial morphogenesis in a three-dimensional culture system, suggesting that Apg-2 is an important regulator of epithelial differentiation. As the observed phenotypes are similar to those previously described for ZO-1 depleted cells and depletion of Apg-2 retards junctional recruitment of ZO-1, regulation of ZO-1 is likely to be an important functional role for Apg-2 during epithelial differentiation. PMID:18028534

Regulation of tight junction assembly and epithelial morphogenesis by the heat shock protein Apg-2.

PubMed

Aijaz, Saima; Sanchez-Heras, Elena; Balda, Maria S; Matter, Karl

2007-11-20

Tight junctions are required for epithelial barrier formation and participate in the regulation of signalling mechanisms that control proliferation and differentiation. ZO-1 is a tight junction-associated adaptor protein that regulates gene expression, junction assembly and epithelial morphogenesis. We have previously demonstrated that the heat shock protein Apg-2 binds ZO-1 and thereby regulates its role in cell proliferation. Here, we addressed the question whether Apg-2 is also important for junction formation and epithelial morphogenesis. We demonstrate that depletion of Apg-2 by RNAi in MDCK cells did not prevent formation of functional tight junctions. Similar to ZO-1, however, reduced expression of Apg-2 retarded de novo junction assembly if analysed in a Ca-switch model. Formation of functional junctions, as monitored by measuring transepithelial electrical resistance, and recruitment of tight and adherens junction markers were retarded. If cultured in three dimensional extracellular matrix gels, Apg-2 depleted cells, as previously shown for ZO-1 depleted cells, did not form hollow polarised cysts but poorly organised, irregular structures. Our data indicate that Apg-2 regulates junction assembly and is required for normal epithelial morphogenesis in a three-dimensional culture system, suggesting that Apg-2 is an important regulator of epithelial differentiation. As the observed phenotypes are similar to those previously described for ZO-1 depleted cells and depletion of Apg-2 retards junctional recruitment of ZO-1, regulation of ZO-1 is likely to be an important functional role for Apg-2 during epithelial differentiation.

30 CFR 75.602 - Trailing cable junctions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Trailing cable junctions. 75.602 Section 75.602... MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Trailing Cables § 75.602 Trailing cable junctions. [Statutory Provision] When two or more trailing cables junction to the same distribution center, means shall...

Public Health Nursing: Public Health Centers

Science.gov Websites

Locations Anchorage-based Itinerants Bethel Craig Delta Junction Dillingham Fairbanks Homer Juneau Kenai agencies with state grant assistance Frontier Region Delta Junction Dillingham Fairbanks Kodiak Nome Tok [back to top] Delta Junction Public Health Center 2857 Alaska Hwy, Room 210 Delta Junction, Alaska 99737

Amorphous semiconductor solar cell

DOEpatents

Dalal, Vikram L.

1981-01-01

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Model Building to Facilitate Understanding of Holliday Junction and Heteroduplex Formation, and Holliday Junction Resolution

ERIC Educational Resources Information Center

Selvarajah, Geeta; Selvarajah, Susila

2016-01-01

Students frequently expressed difficulty in understanding the molecular mechanisms involved in chromosomal recombination. Therefore, we explored alternative methods for presenting the two concepts of the double-strand break model: Holliday junction and heteroduplex formation, and Holliday junction resolution. In addition to a lecture and…

Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

NASA Technical Reports Server (NTRS)

Chi, J.-Y.; Gatos, H. C.

1977-01-01

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

Zero energy states at a normal-metal/cuprate-superconductor interface probed by shot noise

NASA Astrophysics Data System (ADS)

Negri, O.; Zaberchik, M.; Drachuck, G.; Keren, A.; Reznikov, M.

2018-06-01

We report measurements of the current noise generated in the optimally doped, x =0.15 , Au-La2-xSrxCuO4 junctions. For high transmission junctions on a (110) surface, we observed a split zero-bias conductance peak (ZBCP), accompanied by enhanced shot noise. We observed no enhanced noise neither in low-transmission junctions on a (110) surface nor in any junction on a (100) surface. We attribute the enhanced noise to Cooper pair transport through the junctions.

Structure of junctions of multiwalled carbon nanotubes with tetragonal cross section and flattened nanotubes revealed by electron-beam tomography

NASA Astrophysics Data System (ADS)

Nagano, Yuta; Kohno, Hideo

2017-11-01

Multiwalled carbon nanotubes with tetragonal cross section frequently form junctions with flattened multi-walled carbon nanotubes, a kind of carbon nanoribbon. The three-dimensional structure of the junctions is revealed by transmission-electron-microscopy-based tomography. Two types of junction, parallel and diagonal, are found. The formation mechanism of these two types of junction is discussed in terms of the origami mechanism that was previously proposed to explain the formation of carbon nanoribbons and nanotetrahedra.

Transmembrane proteins of tight junctions.

PubMed

Chiba, Hideki; Osanai, Makoto; Murata, Masaki; Kojima, Takashi; Sawada, Norimasa

2008-03-01

Tight junctions contribute to the paracellular barrier, the fence dividing plasma membranes, and signal transduction, acting as a multifunctional complex in vertebrate epithelial and endothelial cells. The identification and characterization of the transmembrane proteins of tight junctions, claudins, junctional adhesion molecules (JAMs), occludin and tricellulin, have led to insights into the molecular nature of tight junctions. We provide an overview of recent progress in studies on these proteins and highlight their roles and regulation, as well as their functional significance in human diseases.

Overdamped Nb/Al-AlO{sub x}/Nb Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacquaniti, V.; Cagliero, C.; Maggi, S.

2005-01-24

We report the fabrication and characterization of overdamped Nb/Al-AlO{sub x}/Nb superconductor-insulator-superconductor Josephson junction whose fabrication process derives from that of the well-known hysteretic junctions. These junctions are an intermediate state between the superconductor-normal metal-superconductor and the superconductor-insulator-superconductor Josephson junctions. Stable and reproducible nonhysteretic current-voltage characteristics are obtained with a proper choice of the fabrication parameters. We have measured critical current densities J{sub C} from 10{sup 3} up to 2x10{sup 4} A/cm{sup 2}, with characteristic voltages from 80 to nearly 450 {mu}V. The junctions are stable against time and repeated thermal cycling.

Cleavage of transmembrane junction proteins and their role in regulating epithelial homeostasis

PubMed Central

Nava, Porfirio; Kamekura, Ryuta; Nusrat, Asma

2013-01-01

Epithelial tissues form a selective barrier that separates the external environment from the internal tissue milieu. Single epithelial cells are densely packed and associate via distinct intercellular junctions. Intercellular junction proteins not only control barrier properties of the epithelium but also play an important role in regulating epithelial homeostasis that encompasses cell proliferation, migration, differentiation and regulated shedding. Recent studies have revealed that several proteases target epithelial junction proteins during physiological maturation as well as in pathologic states such as inflammation and cancer. This review discusses mechanisms and biological consequences of transmembrane junction protein cleavage. The influence of junction protein cleavage products on pathogenesis of inflammation and cancer is discussed. PMID:24665393

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

PubMed

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

NASA Technical Reports Server (NTRS)

Mcgrath, W. R.; Leduc, H. G.; Stern, J. A.

1990-01-01

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Fabrication of Josephson Junction without shadow evaporation

NASA Astrophysics Data System (ADS)

Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

Overlap junctions for high coherence superconducting qubits

NASA Astrophysics Data System (ADS)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

Intestinal epithelial barrier function and tight junction proteins with heat and exercise

PubMed Central

Zuhl, Micah N.; Moseley, Pope L.

2015-01-01

A single layer of enterocytes and tight junctions (intercellular multiprotein complexes) form the intestinal epithelial barrier that controls transport of molecules through transcellular and paracellular pathways. A dysfunctional or “leaky” intestinal tight junction barrier allows augmented permeation of luminal antigens, endotoxins, and bacteria into the blood stream. Various substances and conditions have been shown to affect the maintenance of the intestinal epithelial tight junction barrier. The primary focus of the present review is to analyze the effects of exertional or nonexertional (passive hyperthermia) heat stress on tight junction barrier function in in vitro and in vivo (animals and humans) models. Our secondary focus is to review changes in tight junction proteins in response to exercise or hyperthermic conditions. Finally, we discuss some pharmacological or nutritional interventions that may affect the cellular mechanisms involved in maintaining homeostasis of the intestinal epithelial tight junction barrier during heat stress or exercise. PMID:26359485

Neogenin recruitment of the WAVE regulatory complex maintains adherens junction stability and tension

PubMed Central

Lee, Natalie K.; Fok, Ka Wai; White, Amanda; Wilson, Nicole H.; O'Leary, Conor J.; Cox, Hayley L.; Michael, Magdalene; Yap, Alpha S.; Cooper, Helen M.

2016-01-01

To maintain tissue integrity during epithelial morphogenesis, adherens junctions (AJs) must resist the mechanical stresses exerted by dynamic tissue movements. Junctional stability is dependent on actomyosin contractility within the actin ring. Here we describe a novel function for the axon guidance receptor, Neogenin, as a key component of the actin nucleation machinery governing junctional stability. Loss of Neogenin perturbs AJs and attenuates junctional tension. Neogenin promotes actin nucleation at AJs by recruiting the Wave regulatory complex (WRC) and Arp2/3. A direct interaction between the Neogenin WIRS domain and the WRC is crucial for the spatially restricted recruitment of the WRC to the junction. Thus, we provide the first example of a functional WIRS–WRC interaction in epithelia. We further show that Neogenin regulates cadherin recycling at the AJ. In summary, we identify Neogenin as a pivotal component of the AJ, where it influences both cadherin dynamics and junctional tension. PMID:27029596

Intestinal epithelial barrier function and tight junction proteins with heat and exercise.

PubMed

Dokladny, Karol; Zuhl, Micah N; Moseley, Pope L

2016-03-15

A single layer of enterocytes and tight junctions (intercellular multiprotein complexes) form the intestinal epithelial barrier that controls transport of molecules through transcellular and paracellular pathways. A dysfunctional or "leaky" intestinal tight junction barrier allows augmented permeation of luminal antigens, endotoxins, and bacteria into the blood stream. Various substances and conditions have been shown to affect the maintenance of the intestinal epithelial tight junction barrier. The primary focus of the present review is to analyze the effects of exertional or nonexertional (passive hyperthermia) heat stress on tight junction barrier function in in vitro and in vivo (animals and humans) models. Our secondary focus is to review changes in tight junction proteins in response to exercise or hyperthermic conditions. Finally, we discuss some pharmacological or nutritional interventions that may affect the cellular mechanisms involved in maintaining homeostasis of the intestinal epithelial tight junction barrier during heat stress or exercise. Copyright © 2016 the American Physiological Society.

Shot noise generated by graphene p–n junctions in the quantum Hall effect regime

PubMed Central

Kumada, N.; Parmentier, F. D.; Hibino, H.; Glattli, D. C.; Roulleau, P.

2015-01-01

Graphene offers a unique system to investigate transport of Dirac Fermions at p–n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p–n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p–n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p–n junction length. For short p–n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p–n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing. PMID:26337067

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction.

PubMed

Jeon, Youngeun; Jung, Sungchul; Jin, Hanbyul; Mo, Kyuhyung; Kim, Kyung Rok; Park, Wook-Ki; Han, Seong-Tae; Park, Kibog

2017-12-04

Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films. The voltage response of the EMSM THz detector shows the clear dependence on the polarization angle of incident THz wave and the responsivity is found to be very high (~2,169 V/W) at 0.4 THz without any antenna and signal amplifier. The EMSM junction structure can be a new and efficient way of fabricating the nonlinear device THz detector with high cut-off frequency relying on extremely small junction area.

Single-contact tunneling thermometry

DOEpatents

Maksymovych, Petro

2016-02-23

A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

Single-molecule detection of dihydroazulene photo-thermal reaction using break junction technique

NASA Astrophysics Data System (ADS)

Huang, Cancan; Jevric, Martyn; Borges, Anders; Olsen, Stine T.; Hamill, Joseph M.; Zheng, Jue-Ting; Yang, Yang; Rudnev, Alexander; Baghernejad, Masoud; Broekmann, Peter; Petersen, Anne Ugleholdt; Wandlowski, Thomas; Mikkelsen, Kurt V.; Solomon, Gemma C.; Brøndsted Nielsen, Mogens; Hong, Wenjing

2017-05-01

Charge transport by tunnelling is one of the most ubiquitous elementary processes in nature. Small structural changes in a molecular junction can lead to significant difference in the single-molecule electronic properties, offering a tremendous opportunity to examine a reaction on the single-molecule scale by monitoring the conductance changes. Here, we explore the potential of the single-molecule break junction technique in the detection of photo-thermal reaction processes of a photochromic dihydroazulene/vinylheptafulvene system. Statistical analysis of the break junction experiments provides a quantitative approach for probing the reaction kinetics and reversibility, including the occurrence of isomerization during the reaction. The product ratios observed when switching the system in the junction does not follow those observed in solution studies (both experiment and theory), suggesting that the junction environment was perturbing the process significantly. This study opens the possibility of using nano-structured environments like molecular junctions to tailor product ratios in chemical reactions.

Properties of Josephson Junction Fabricated on Bicrystal Substrate with Different Misorientation Angles

NASA Astrophysics Data System (ADS)

Minotani, Tadashi; Kawakami, Satoru; Kuroki, Yukinori; Enpuku, Keiji

1998-06-01

In order to develop YBa2Cu3O7-δ bicrystal junctions suitable for high-performance superconducting quantum interference device (SQUID), the relationship between the junction properties and the misorientation angle of the bicrystal substrate is studied experimentally. Misorientation angles of 24°, 27°, 30°, 33° and 36.8° are used, and the angular dependencies of junction resistance Rs and critical current Io are investigated. It is shown that values of Rs and Io approximately follow the relation IoRs1.5=const. in these junctions. The obtained results are analyzed in terms of the direct and resonant tunneling mechanisms. It is also shown that values of Rs≈10 Ω and Io≈20 µA can be obtained rather reproducibly when we use the 30° junctions. The properties of this junction are very promising for the development of high-performance SQUID.

All NbN tunnel junction fabrication

NASA Technical Reports Server (NTRS)

Leduc, H. G.; Khanna, S. K.; Stern, J. A.

1987-01-01

The development of SIS tunnel junctions based on NbN for mixer applications in the submillimeter range is reported. The unique technological challenges inherent in the development of all refractory-compound superconductor-based tunnel junctions are highlighted. Current deposition and fabrication techniques are discussed, and the current status of all-NbN tunnel junctions is reported.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

Gap junction systems in the rat vestibular labyrinth: immunohistochemical and ultrastructural analysis.

PubMed

Kikuchi, T; Adams, J C; Paul, D L; Kimura, R S

1994-09-01

The distribution of gap junctions within the vestibular labyrinth was investigated using immunohistochemistry and transmission electron microscopy. Connexin26-like immunoreactivity was observed among supporting cells in each vestibular sensory epithelium. Reaction product was also present in the transitional epithelium of each vestibular endorgan and in the planum semilunatum of crista ampullaris. No connexin26-like immunoreactivity was observed among thin wall epithelial cells or among vestibular dark cells. In addition, fibrocytes within vestibular connective tissue were positively immunostained. Reaction product was also detected in the melanocyte area just beneath dark cells. Ultrastructural observations indicated that a gap junction network of vestibular supporting cells extends to the transitional epithelium and planum semilunatum and forms an isolated epithelial cell gap junction system in each vestibular endorgan. In contrast, no gap junctions were found among wall epithelial cells or among dark cells. Fibrocytes and melanocytes were coupled by gap junctions and belong to the connective tissue cell gap junction system, which is continuous throughout the vestibular system and the cochlea. The possible functional significance of these gap junction systems is discussed.

New high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Daud, T.; Crotty, G. T.

1985-01-01

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Electron optics with ballistic graphene junctions

NASA Astrophysics Data System (ADS)

Chen, Shaowen

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Valley dependent transport in graphene L junction

NASA Astrophysics Data System (ADS)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Metallic Junction Thermoelectric Device Simulations

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2017-01-01

Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

JAM-C regulates tight junctions and integrin-mediated cell adhesion and migration.

PubMed

Mandicourt, Guillaume; Iden, Sandra; Ebnet, Klaus; Aurrand-Lions, Michel; Imhof, Beat A

2007-01-19

Junctional Adhesion Molecules (JAMs) have been described as major components of tight junctions in endothelial and epithelial cells. Tight junctions are crucial for the establishment and maintenance of cell polarity. During tumor development, they are remodeled, enabling neoplastic cells to escape from constraints imposed by intercellular junctions and to adopt a migratory behavior. Using a carcinoma cell line we tested whether JAM-C could affect tight junctions and migratory properties of tumor cells. We show that transfection of JAM-C improves the tight junctional barrier in tumor cells devoid of JAM-C expression. This is dependent on serine 281 in the cytoplasmic tail of JAM-C because serine mutation into alanine abolishes the specific localization of JAM-C in tight junctions and establishment of cell polarity. More importantly, the same mutation stimulates integrin-mediated cell migration and adhesion via the modulation of beta1 and beta3 integrin activation. These results highlight an unexpected function for JAM-C in controlling epithelial cell conversion from a static, polarized state to a pro-migratory phenotype.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Innovative architecture design for high performance organic and hybrid multi-junction solar cells

NASA Astrophysics Data System (ADS)

Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

2017-08-01

The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

Ephaptic coupling rescues conduction failure in weakly coupled cardiac tissue with voltage-gated gap junctions

NASA Astrophysics Data System (ADS)

Weinberg, S. H.

2017-09-01

Electrical conduction in cardiac tissue is usually considered to be primarily facilitated by gap junctions, providing a pathway between the intracellular spaces of neighboring cells. However, recent studies have highlighted the role of coupling via extracellular electric fields, also known as ephaptic coupling, particularly in the setting of reduced gap junction expression. Further, in the setting of reduced gap junctional coupling, voltage-dependent gating of gap junctions, an oft-neglected biophysical property in computational studies, produces a positive feedback that promotes conduction failure. We hypothesized that ephaptic coupling can break the positive feedback loop and rescue conduction failure in weakly coupled cardiac tissue. In a computational tissue model incorporating voltage-gated gap junctions and ephaptic coupling, we demonstrate that ephaptic coupling can rescue conduction failure in weakly coupled tissue. Further, ephaptic coupling increased conduction velocity in weakly coupled tissue, and importantly, reduced the minimum gap junctional coupling necessary for conduction, most prominently at fast pacing rates. Finally, we find that, although neglecting gap junction voltage-gating results in negligible differences in well coupled tissue, more significant differences occur in weakly coupled tissue, greatly underestimating the minimal gap junctional coupling that can maintain conduction. Our study suggests that ephaptic coupling plays a conduction-preserving role, particularly at rapid heart rates.

Tuning of optical and electrical properties of wide band gap Fe:SnO2/Li:NiO p- n junctions using 80 MeV oxygen ion beam

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Avasthi, D. K.; Joshi, U. S.

2016-12-01

Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p- n junction diode have been investigated for advanced electronics application. Fe:SnO2/Li:NiO p- n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO2 and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p- n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p- n junction diode was irradiated to 80 MeV O+6 ions with 1 × 1012 ions/cm2 fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p- n junction diode, O+6 ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p- n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p- n junction diode.

Real-space microscopic electrical imaging of n+-p junction beneath front-side Ag contact of multicrystalline Si solar cells

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

2012-04-01

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

MoRe-based tunnel junctions and their characteristics

NASA Astrophysics Data System (ADS)

Shaternik, V.; Larkin, S.; Noskov, V.; Chubatyy, V.; Sizontov, V.; Miroshnikov, A.; Karmazin, A.

2008-02-01

Perspective Josephson Mo-Re alloy-oxide-Pb, Mo-Re alloy-normal metal-oxide-Pb and Mo-Re alloy-normal metal-oxide-normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin (~50-100 nm) MoRe superconducting films are deposited on Al2O3 substrates by using a dc magnetron sputtering of MoRe target. Normal metal (Sn, Al) thin films are deposited on the MoRe films surfaces by thermal evaporation of metals in vacuum and oxidized to fabricate junctions oxide barriers. Quasiparticle I-V curves of the fabricated junctions were measured in wide range of voltages. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies. The result of the comparison of experimental quasiparticle I-V curves and calculated ones is proposed and discussed. Also I-V curves of the fabricated junctions have been measured under microwave irradiation with 60 GHz frequency, clear Shapiro steps in the measured I-V curves were observed and discussed.

Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-04-15

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, whichmore » is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.« less

Effects of geometric configuration on droplet generation in Y-junctions and anti-Y-junctions microchannels

NASA Astrophysics Data System (ADS)

Liu, Zhao-Miao; Liu, Li-Kun; Shen, Feng

2015-10-01

Droplets generation in Y-junctions and anti-Y-junctions microchannels are experimentally studied using a high speed digital microscopic system and numerical simulation. Geometric configuration of a microchannel, such as Y-angle (90°, 135°, -90° and -135°), channel depth and other factors have been taken into consideration. It is found that droplets generated in anti-Y-junctions have a smaller size and a shorter generation cycle compared with those in Y-junctions under the same experimental conditions. Through observing the internal velocity field, the vortex appearing in continuous phase in anti-Y-junctions is one of the key factors for the difference of droplet size and generation cycle. It is found that droplet size is bigger and generation cycle is longer when the absolute angle value of the intersection between the continuous and the dispersed phases (i.e., the angle between the main channel and the continuous phase or the dispersed phase channel) increases. The droplet's size is influenced by the Y-angle, which varies with the channel depth in Y-junctions. The Y-angle has a positive effect on the droplet generation cycle, but a smaller height-width ratio will enhance the impact of a continuous and dispersed phase's intersection angle on the droplet generation cycle in Y-junctions microchannels.

Three-dimensional modeling and quantitative analysis of gap junction distributions in cardiac tissue.

PubMed

Lackey, Daniel P; Carruth, Eric D; Lasher, Richard A; Boenisch, Jan; Sachse, Frank B; Hitchcock, Robert W

2011-11-01

Gap junctions play a fundamental role in intercellular communication in cardiac tissue. Various types of heart disease including hypertrophy and ischemia are associated with alterations of the spatial arrangement of gap junctions. Previous studies applied two-dimensional optical and electron-microscopy to visualize gap junction arrangements. In normal cardiomyocytes, gap junctions were primarily found at cell ends, but can be found also in more central regions. In this study, we extended these approaches toward three-dimensional reconstruction of gap junction distributions based on high-resolution scanning confocal microscopy and image processing. We developed methods for quantitative characterization of gap junction distributions based on analysis of intensity profiles along the principal axes of myocytes. The analyses characterized gap junction polarization at cell ends and higher-order statistical image moments of intensity profiles. The methodology was tested in rat ventricular myocardium. Our analysis yielded novel quantitative data on gap junction distributions. In particular, the analysis demonstrated that the distributions exhibit significant variability with respect to polarization, skewness, and kurtosis. We suggest that this methodology provides a quantitative alternative to current approaches based on visual inspection, with applications in particular in characterization of engineered and diseased myocardium. Furthermore, we propose that these data provide improved input for computational modeling of cardiac conduction.

Structure and function of gap junction proteins: role of gap junction proteins in embryonic heart development.

PubMed

Ahir, Bhavesh K; Pratten, Margaret K

2014-01-01

Intercellular (cell-to-cell) communication is a crucial and complex mechanism during embryonic heart development. In the cardiovascular system, the beating of the heart is a dynamic and key regulatory process, which is functionally regulated by the coordinated spread of electrical activity through heart muscle cells. Heart tissues are composed of individual cells, each bearing specialized cell surface membrane structures called gap junctions that permit the intercellular exchange of ions and low molecular weight molecules. Gap junction channels are essential in normal heart function and they assist in the mediated spread of electrical impulses that stimulate synchronized contraction (via an electrical syncytium) of cardiac tissues. This present review describes the current knowledge of gap junction biology. In the first part, we summarise some relevant biochemical and physiological properties of gap junction proteins, including their structure and function. In the second part, we review the current evidence demonstrating the role of gap junction proteins in embryonic development with particular reference to those involved in embryonic heart development. Genetics and transgenic animal studies of gap junction protein function in embryonic heart development are considered and the alteration/disruption of gap junction intercellular communication which may lead to abnormal heart development is also discussed.

MarvelD3 couples tight junctions to the MEKK1–JNK pathway to regulate cell behavior and survival

PubMed Central

Steed, Emily; Elbediwy, Ahmed; Vacca, Barbara; Dupasquier, Sébastien; Hemkemeyer, Sandra A.; Suddason, Tesha; Costa, Ana C.; Beaudry, Jean-Bernard; Zihni, Ceniz; Gallagher, Ewen; Pierreux, Christophe E.

2014-01-01

MarvelD3 is a transmembrane component of tight junctions, but there is little evidence for a direct involvement in the junctional permeability barrier. Tight junctions also regulate signaling mechanisms that guide cell proliferation; however, the transmembrane components that link the junction to such signaling pathways are not well understood. In this paper, we show that MarvelD3 is a dynamic junctional regulator of the MEKK1–c-Jun NH2-terminal kinase (JNK) pathway. Loss of MarvelD3 expression in differentiating Caco-2 cells resulted in increased cell migration and proliferation, whereas reexpression in a metastatic tumor cell line inhibited migration, proliferation, and in vivo tumor formation. Expression levels of MarvelD3 inversely correlated with JNK activity, as MarvelD3 recruited MEKK1 to junctions, leading to down-regulation of JNK phosphorylation and inhibition of JNK-regulated transcriptional mechanisms. Interplay between MarvelD3 internalization and JNK activation tuned activation of MEKK1 during osmotic stress, leading to junction dissociation and cell death in MarvelD3-depleted cells. MarvelD3 thus couples tight junctions to the MEKK1–JNK pathway to regulate cell behavior and survival. PMID:24567356

Characterization of NbN films and tunnel junctions

NASA Technical Reports Server (NTRS)

Stern, J. A.; Leduc, H. G.

1991-01-01

Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.

The fallopian tube-peritoneal junction: a potential site of carcinogenesis.

PubMed

Seidman, Jeffrey D; Yemelyanova, Anna; Zaino, Richard J; Kurman, Robert J

2011-01-01

Junctions between different types of epithelia are hot spots for carcinogenesis, but the junction of the peritoneal mesothelium with the fallopian tubal epithelium, the tubal-peritoneal junction, has not been characterized earlier. A total of 613 junctional foci in 228 fallopian tube specimens from 182 patients who underwent surgery for a variety of indications, including 27 risk-reducing salpingo-oophorectomy specimens, were studied. Edema, congestion, and dilated lymphatic channels were commonly present. Transitional metaplasia was found at the junction in 20% of patients and mesothelial hyperplasia in 17%. Inflammation at the junction was seen predominantly in patients with salpingitis, torsion, or tubal pregnancy. Ovarian-type stroma was found at the junction in 5% of patients, and was found elsewhere in the tubal lamina propria in an additional 27% of patients. Findings in risk-reducing salpingo-oophorectomy specimens in women with BRCA mutations, a personal history of breast cancer, and/or a family history of breast/ovarian cancer were similar to those in controls. Transitional metaplasia specifically localizes to this junction, and is the probable source of Walthard cell nests. The recently highlighted significance of fimbrial tubal epithelium in the origin of serous ovarian carcinomas and a study suggesting that mucinous and Brenner tumors may arise from transitional-type epithelium in this location suggest that the tubal-peritoneal junction may play a role in the development of these tumors. This is the first comprehensive description of a hitherto unrecognized transitional zone in the adnexa.

Junction Potentials Bias Measurements of Ion Exchange Membrane Permselectivity.

PubMed

Kingsbury, Ryan S; Flotron, Sophie; Zhu, Shan; Call, Douglas F; Coronell, Orlando

2018-04-17

Ion exchange membranes (IEMs) are versatile materials relevant to a variety of water and waste treatment, energy production, and industrial separation processes. The defining characteristic of IEMs is their ability to selectively allow positive or negative ions to permeate, which is referred to as permselectivity. Measured values of permselectivity that equal unity (corresponding to a perfectly selective membrane) or exceed unity (theoretically impossible) have been reported for cation exchange membranes (CEMs). Such nonphysical results call into question our ability to correctly measure this crucial membrane property. Because weighing errors, temperature, and measurement uncertainty have been shown to not explain these anomalous permselectivity results, we hypothesized that a possible explanation are junction potentials that occur at the tips of reference electrodes. In this work, we tested this hypothesis by comparing permselectivity values obtained from bare Ag/AgCl wire electrodes (which have no junction) to values obtained from single-junction reference electrodes containing two different electrolytes. We show that permselectivity values obtained using reference electrodes with junctions were greater than unity for CEMs. In contrast, electrodes without junctions always produced permselectivities lower than unity. Electrodes with junctions also resulted in artificially low permselectivity values for AEMs compared to electrodes without junctions. Thus, we conclude that junctions in reference electrodes introduce two biases into results in the IEM literature: (i) permselectivity values larger than unity for CEMs and (ii) lower permselectivity values for AEMs compared to those for CEMs. These biases can be avoided by using electrodes without a junction.

Dielectric properties of biological tissues in which cells are connected by communicating junctions

NASA Astrophysics Data System (ADS)

Asami, Koji

2007-06-01

The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities Pj, the low-frequency (LF) relaxation curve became broader, especially at Pj of 0.2-0.5, and its intensity was proportional to Pj up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues.

The beneficial effects of cumulus cells and oocyte-cumulus cell gap junctions depends on oocyte maturation and fertilization methods in mice.

PubMed

Zhou, Cheng-Jie; Wu, Sha-Na; Shen, Jiang-Peng; Wang, Dong-Hui; Kong, Xiang-Wei; Lu, Angeleem; Li, Yan-Jiao; Zhou, Hong-Xia; Zhao, Yue-Fang; Liang, Cheng-Guang

2016-01-01

Cumulus cells are a group of closely associated granulosa cells that surround and nourish oocytes. Previous studies have shown that cumulus cells contribute to oocyte maturation and fertilization through gap junction communication. However, it is not known how this gap junction signaling affects in vivo versus in vitro maturation of oocytes, and their subsequent fertilization and embryonic development following insemination. Therefore, in our study, we performed mouse oocyte maturation and insemination using in vivo- or in vitro-matured oocyte-cumulus complexes (OCCs, which retain gap junctions between the cumulus cells and the oocytes), in vitro-matured, denuded oocytes co-cultured with cumulus cells (DCs, which lack gap junctions between the cumulus cells and the oocytes), and in vitro-matured, denuded oocytes without cumulus cells (DOs). Using these models, we were able to analyze the effects of gap junction signaling on oocyte maturation, fertilization, and early embryo development. We found that gap junctions were necessary for both in vivo and in vitro oocyte maturation. In addition, for oocytes matured in vivo, the presence of cumulus cells during insemination improved fertilization and blastocyst formation, and this improvement was strengthened by gap junctions. Moreover, for oocytes matured in vitro, the presence of cumulus cells during insemination improved fertilization, but not blastocyst formation, and this improvement was independent of gap junctions. Our results demonstrate, for the first time, that the beneficial effect of gap junction signaling from cumulus cells depends on oocyte maturation and fertilization methods.

Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.

In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

DOE PAGES

Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; ...

2014-12-17

In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

Increase of gap junction activities in SW480 human colorectal cancer cells.

PubMed

Bigelow, Kristina; Nguyen, Thu A

2014-07-09

Colorectal cancer is one of the most common cancers in the United States with an early detection rate of only 39%. Colorectal cancer cells along with other cancer cells exhibit many deficiencies in cell-to-cell communication, particularly gap junctional intercellular communication (GJIC). GJIC has been reported to diminish as cancer cells progress. Gap junctions are intercellular channels composed of connexin proteins, which mediate the direct passage of small molecules from one cell to the next. They are involved in the regulation of the cell cycle, cell differentiation, and cell signaling. Since the regulation of gap junctions is lost in colorectal cancer cells, the goal of this study is to determine the effect of GJIC restoration in colorectal cancer cells. Gap Junction Activity Assay and protein analysis were performed to evaluate the effects of overexpression of connexin 43 (Cx43) and treatment of PQ1, a small molecule, on GJIC. Overexpression of Cx43 in SW480 colorectal cancer cells causes a 6-fold increase of gap junction activity compared to control. This suggests that overexpressing Cx43 can restore GJIC. Furthermore, small molecule like PQ1 directly targeting gap junction channel was used to increase GJIC. Gap junction enhancers, PQ1, at 200 nM showed a 4-fold increase of gap junction activity in SW480 cells. A shift from the P0 to the P2 isoform of Cx43 was seen after 1 hour treatment with 200 nM PQ1. Overexpression of Cx43 and treatment of PQ1 can directly increase gap junction activity. The findings provide an important implication in which restoration of gap junction activity can be targeted for drug development.

Gap junctions in Malpighian tubules of Aedes aegypti.

PubMed

Weng, Xing-He; Piermarini, Peter M; Yamahiro, Atsuko; Yu, Ming-Jiun; Aneshansley, Daniel J; Beyenbach, Klaus W

2008-02-01

We present electrical, physiological and molecular evidence for substantial electrical coupling of epithelial cells in Malpighian tubules via gap junctions. Current was injected into one principal cell of the isolated Malpighian tubule and membrane voltage deflections were measured in that cell and in two neighboring principal cells. By short-circuiting the transepithelial voltage with the diuretic peptide leucokinin-VIII we largely eliminated electrical coupling of principal cells through the tubule lumen, thereby allowing coupling through gap junctions to be analyzed. The analysis of an equivalent electrical circuit of the tubule yielded an average gap-junction resistance (R(gj)) of 431 kOmega between two cells. This resistance would stem from 6190 open gap-junctional channels, assuming the high single gap-junction conductance of 375 pS found in vertebrate tissues. The addition of the calcium ionophore A23187 (2 micromol l(-1)) to the peritubular Ringer bath containing 1.7 mmol l(-1) Ca(2+) did not affect the gap-junction resistance, but metabolic inhibition of the tubule with dinitrophenol (0.5 mmol l(-1)) increased the gap-junction resistance 66-fold, suggesting the regulation of gap junctions by ATP. Lucifer Yellow injected into a principal cell did not appear in neighboring principal cells. Thus, gap junctions allow the passage of current but not Lucifer Yellow. Using RT-PCR we found evidence for the expression of innexins 1, 2, 3 and 7 (named after their homologues in Drosophila) in Malpighian tubules. The physiological demonstration of gap junctions and the molecular evidence for innexin in Malpighian tubules of Aedes aegypti call for the double cable model of the tubule, which will improve the measurement and the interpretation of electrophysiological data collected from Malpighian tubules.

A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hadley, Austin; Ding, George X., E-mail: george.ding@vanderbilt.edu

2014-01-01

Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fieldsmore » and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans.« less

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect smooth interface fails to explain such behavior, hence, we apply a modified emission theory with Gaussian distribution of Schottky barrier heights. The modified theory, applicable to inhomogeneous interfaces, explains the temperature dependent behavior of our Schottky junctions and gives a temperature independent mean barrier height. We attribute the inhomogeneous barrier height to the presence of graphene ripples and ridges in case of SiC and MoS2 while surface states and trapped charges at the interface is dominating in Si and GaAs. Additionally, we observe bias dependent current and barrier height in reverse bias regime also for all Schottky junctions. To explain such behavior, we consider two types of reverse bias conduction mechanisms; Poole-Frenkel and Schottky emission. We find that Poole-Frenkel emission explains the characteristics of graphene/SiC junctions very well. However, both the mechanism fails to interpret the behavior of graphene/Si and graphene/GaAs Schottky junctions. These findings provide insight into the fundamental physics at the interface of graphene/semiconductor junctions.

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany Maria

A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this complicated system, first, studies of junctions with only a single ferromagnetic junction were required to determine the 0-pi transition thickness of that material, the decay of the critical current through the junction with thickness, and the switching field of the material. The materials studied included NiFeMo, NiFe, Ni, and NiFeCo. Additionally, roughness studies of several different superconducting base electrodes and normal metal buffer and spacer layers were performed to determine the optimum junction layers. The ferromagnetic layers used were on the order of 1-2 nm thick, so a smooth growth template is imperative to maintain continuous films with in-plane magnetizations. Lastly, single junction spin-valve samples were studied. We are not equipped to measure the phase of a single junction, but series of samples where one ferromagnetic layer is systematically varied in thickness can inform the proper thicknesses needed for 0-pi switching based on relative critical current values between the parallel and antiparallel magnetic configurations. Utilizing this background information, two spin-valve samples were incorporated in a superconducting loop so that the relative phase of the two junctions could be investigated. Through this process, the first phase-controllable ferromagnetic Josephson junctions were experimentally demonstrated using phase-sensitive measurement techniques. This provided the proof of concept for the Josephson Magnetic Random Access Memory (JMRAM), a superconducting memory system in development at Northrop Grumman, with whom we collaborate on this work. Phase-controllable systems were successfully demonstrated using two different magnetic material stacks and verified with several analysis techniques.

75 FR 8990 - Notice of Public Meeting, Northwest Colorado Resource Advisory Council Subgroup for McInnis...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-26

... Land Management Grand Junction Field Office at 2815 H Road, Grand Junction, CO 81506. The meeting will... Conservation Area Manager, 2815 H Road, Grand Junction, CO; telephone 970-244-3049; or Erin Curtis, Public Affairs Specialist, 2815 H Road, Grand Junction, CO, telephone 970-244-3097. SUPPLEMENTARY INFORMATION...

The persistent current and energy spectrum on a driven mesoscopic LC-circuit with Josephson junction

NASA Astrophysics Data System (ADS)

Pahlavanias, Hassan

2018-03-01

The quantum theory for a mesoscopic electric circuit including a Josephson junction with charge discreteness is studied. By considering coupling energy of the mesoscopic capacitor in Josephson junction device, a Hamiltonian describing the dynamics of a quantum mesoscopic electric LC-circuit with charge discreteness is introduced. We first calculate the persistent current on a quantum driven ring including Josephson junction. Then we obtain the persistent current and energy spectrum of a quantum mesoscopic electrical circuit which includes capacitor, inductor, time-dependent external source and Josephson junction.

Series array of highly hysteretic Josephson junctions coupled to a microstrip resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costabile, G.; Andreone, D.; Lacquaniti, V.

1985-07-15

We have tested a new device based on a 12 junction array coupled to a resonator. We have explored the feasibility of the phase lock for all the junctions at the same biasing current, which yields voltage quantization across each junction, eliminating the need to individually bias the junctions. The whole rf structure has been realized by stripline technology. The resonator is fed by a 50-..cap omega.. line and is decoupled from the dc circuit by elliptical low-pass filters inserted in the bias leads.

Emergent central pattern generator behavior in gap-junction-coupled Hodgkin-Huxley style neuron model.

PubMed

Horn, Kyle G; Memelli, Heraldo; Solomon, Irene C

2012-01-01

Most models of central pattern generators (CPGs) involve two distinct nuclei mutually inhibiting one another via synapses. Here, we present a single-nucleus model of biologically realistic Hodgkin-Huxley neurons with random gap junction coupling. Despite no explicit division of neurons into two groups, we observe a spontaneous division of neurons into two distinct firing groups. In addition, we also demonstrate this phenomenon in a simplified version of the model, highlighting the importance of afterhyperpolarization currents (I(AHP)) to CPGs utilizing gap junction coupling. The properties of these CPGs also appear sensitive to gap junction conductance, probability of gap junction coupling between cells, topology of gap junction coupling, and, to a lesser extent, input current into our simulated nucleus.

Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Rhee, K. W.; Teufel, J.; Schoelkopf, R. J.

2002-01-01

This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

Fabrication of superconductor-ferromagnet-insulator-superconductor Josephson junctions with critical current uniformity applicable to integrated circuits

NASA Astrophysics Data System (ADS)

Ito, Hiroshi; Taniguchi, Soya; Ishikawa, Kouta; Akaike, Hiroyuki; Fujimaki, Akira

2017-03-01

Nb Josephson junctions (JJs) were fabricated with a Pd89Ni11 ferromagnetic interlayer and an AlO x tunnel barrier layer for use in large-scale superconducting integrated circuits. The junctions had a small critical current (I c) spread, where the standard deviation 1σ was less than 2% at 4.2 K for junctions with the same designed size. It was observed that the electrical behavior of the junctions could be controlled by manipulating the film thickness of the PdNi interlayer. The junctions behaved as a π-JJ for thicknesses of 9 and 11 nm, showing 1σ in the I c spread of 1.2% for 9 nm.

Interactions between strike-slip earthquakes and the subduction interface near the Mendocino Triple Junction

NASA Astrophysics Data System (ADS)

Gong, Jianhua; McGuire, Jeffrey J.

2018-01-01

The interactions between the North American, Pacific, and Gorda plates at the Mendocino Triple Junction (MTJ) create one of the most seismically active regions in North America. The earthquakes rupture all three plate boundaries but also include considerable intraplate seismicity reflecting the strong internal deformation of the Gorda plate. Understanding the stress levels that drive these ruptures and estimating the locking state of the subduction interface are especially important topics for regional earthquake hazard assessment. However owing to the lack of offshore seismic and geodetic instruments, the rupture process of only a few large earthquakes near the MTJ have been studied in detail and the locking state of the subduction interface is not well constrained. In this paper, first, we use the second moments inversion method to study the rupture process of the January 28, 2015 Mw 5.7 earthquake on the Mendocino transform fault that was unusually well recorded by both onshore and offshore strong motion instruments. We estimate the rupture dimension to be approximately 6 km by 3 km corresponding to a stress drop of ∼4 MPa for a crack model. Next we investigate the frictional state of the subduction interface by simulating the afterslip that would be expected there as a result of the stress changes from the 2015 earthquake and a 2010 Mw 6.5 intraplate earthquake within the subducted Gorda plate. We simulate afterslip scenarios for a range of depths of the downdip end of the locked zone defined as the transition to velocity strengthening friction and calculate the corresponding surface deformation expected at onshore GPS monuments. We can rule out a very shallow downdip limit owing to the lack of a detectable signal at onshore GPS stations following the 2010 earthquake. Our simulations indicate that the locking depth on the slab surface is at least 14 km, which suggests that the next M8 earthquake rupture will likely reach the coastline and strong shaking should be expected there.

Effect of intrinsic curvature and edge tension on the stability of binary mixed-membrane three-junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gardner, Jasmine M.; Abrams, Cameron F.; Deserno, Markus

We use a combination of coarse-grained molecular dynamics simulations and theoretical modeling to examine three-junctions in mixed lipid bilayer membranes. These junctions are localized defect lines in which three bilayers merge in such a way that each bilayer shares one monolayer with one of the other two bilayers. The resulting local morphology is non-lamellar, resembling the threefold symmetric defect lines in inverse hexagonal phases, but it regularly occurs during membrane fission and fusion events. We realize a system of junctions by setting up a honeycomb lattice, which in its primitive cell contains two hexagons and four three-line junctions, permitting usmore » to study their stability as well as their line tension. We specifically consider the effects of lipid composition and intrinsic curvature in binary mixtures, which contain a fraction of negatively curved lipids in a curvature-neutral background phase. Three-junction stability results from a competition between the junction and an open edge, which arises if one of the three bilayers detaches from the other two. We show that the stable phase is the one with the lower defect line tension. The strong and opposite monolayer curvatures present in junctions and edges enhance the mole fraction of negatively curved lipids in junctions and deplete it in edges. This lipid sorting affects the two line tensions and in turn the relative stability of the two phases. It also leads to a subtle entropic barrier for the transition between junction and edge that is absent in uniform membranes.« less

Experimental testing and modeling analysis of solute mixing at water distribution pipe junctions.

PubMed

Shao, Yu; Jeffrey Yang, Y; Jiang, Lijie; Yu, Tingchao; Shen, Cheng

2014-06-01

Flow dynamics at a pipe junction controls particle trajectories, solute mixing and concentrations in downstream pipes. The effect can lead to different outcomes of water quality modeling and, hence, drinking water management in a distribution network. Here we have investigated solute mixing behavior in pipe junctions of five hydraulic types, for which flow distribution factors and analytical equations for network modeling are proposed. First, based on experiments, the degree of mixing at a cross is found to be a function of flow momentum ratio that defines a junction flow distribution pattern and the degree of departure from complete mixing. Corresponding analytical solutions are also validated using computational-fluid-dynamics (CFD) simulations. Second, the analytical mixing model is further extended to double-Tee junctions. Correspondingly the flow distribution factor is modified to account for hydraulic departure from a cross configuration. For a double-Tee(A) junction, CFD simulations show that the solute mixing depends on flow momentum ratio and connection pipe length, whereas the mixing at double-Tee(B) is well represented by two independent single-Tee junctions with a potential water stagnation zone in between. Notably, double-Tee junctions differ significantly from a cross in solute mixing and transport. However, it is noted that these pipe connections are widely, but incorrectly, simplified as cross junctions of assumed complete solute mixing in network skeletonization and water quality modeling. For the studied pipe junction types, analytical solutions are proposed to characterize the incomplete mixing and hence may allow better water quality simulation in a distribution network. Published by Elsevier Ltd.

Low Level Pro-inflammatory Cytokines Decrease Connexin36 Gap Junction Coupling in Mouse and Human Islets through Nitric Oxide-mediated Protein Kinase Cδ*

PubMed Central

Farnsworth, Nikki L.; Walter, Rachelle L.; Hemmati, Alireza; Westacott, Matthew J.; Benninger, Richard K. P.

2016-01-01

Pro-inflammatory cytokines contribute to the decline in islet function during the development of diabetes. Cytokines can disrupt insulin secretion and calcium dynamics; however, the mechanisms underlying this are poorly understood. Connexin36 gap junctions coordinate glucose-induced calcium oscillations and pulsatile insulin secretion across the islet. Loss of gap junction coupling disrupts these dynamics, similar to that observed during the development of diabetes. This study investigates the mechanisms by which pro-inflammatory cytokines mediate gap junction coupling. Specifically, as cytokine-induced NO can activate PKCδ, we aimed to understand the role of PKCδ in modulating cytokine-induced changes in gap junction coupling. Isolated mouse and human islets were treated with varying levels of a cytokine mixture containing TNF-α, IL-1β, and IFN-γ. Islet dysfunction was measured by insulin secretion, calcium dynamics, and gap junction coupling. Modulators of PKCδ and NO were applied to determine their respective roles in modulating gap junction coupling. High levels of cytokines caused cell death and decreased insulin secretion. Low levels of cytokine treatment disrupted calcium dynamics and decreased gap junction coupling, in the absence of disruptions to insulin secretion. Decreases in gap junction coupling were dependent on NO-regulated PKCδ, and altered membrane organization of connexin36. This study defines several mechanisms underlying the disruption to gap junction coupling under conditions associated with the development of diabetes. These mechanisms will allow for greater understanding of islet dysfunction and suggest ways to ameliorate this dysfunction during the development of diabetes. PMID:26668311

Two Classes of Gap Junction Channels Mediate Soma-Germline Interactions Essential for Germline Proliferation and Gametogenesis in Caenorhabditis elegans

PubMed Central

Starich, Todd A.; Hall, David H.; Greenstein, David

2014-01-01

In all animals examined, somatic cells of the gonad control multiple biological processes essential for germline development. Gap junction channels, composed of connexins in vertebrates and innexins in invertebrates, permit direct intercellular communication between cells and frequently form between somatic gonadal cells and germ cells. Gap junctions comprise hexameric hemichannels in apposing cells that dock to form channels for the exchange of small molecules. Here we report essential roles for two classes of gap junction channels, composed of five innexin proteins, in supporting the proliferation of germline stem cells and gametogenesis in the nematode Caenorhabditis elegans. Transmission electron microscopy of freeze-fracture replicas and fluorescence microscopy show that gap junctions between somatic cells and germ cells are more extensive than previously appreciated and are found throughout the gonad. One class of gap junctions, composed of INX-8 and INX-9 in the soma and INX-14 and INX-21 in the germ line, is required for the proliferation and differentiation of germline stem cells. Genetic epistasis experiments establish a role for these gap junction channels in germline proliferation independent of the glp-1/Notch pathway. A second class of gap junctions, composed of somatic INX-8 and INX-9 and germline INX-14 and INX-22, is required for the negative regulation of oocyte meiotic maturation. Rescue of gap junction channel formation in the stem cell niche rescues germline proliferation and uncovers a later channel requirement for embryonic viability. This analysis reveals gap junctions as a central organizing feature of many soma–germline interactions in C. elegans. PMID:25195067

The adherens junction is lost during normal pregnancy but not during ovarian hyperstimulated pregnancy.

PubMed

Dowland, Samson N; Madawala, Romanthi J; Lindsay, Laura A; Murphy, Christopher R

2016-03-01

During early pregnancy in the rat, the luminal uterine epithelial cells (UECs) must transform to a receptive state to permit blastocyst attachment and implantation. The implantation process involves penetration of the epithelial barrier, so it is expected that the transformation of UECs includes alterations in the lateral junctional complex. Previous studies have demonstrated a deepening of the tight junction (zonula occludens) and a reduction in the number of desmosomes (macula adherens) in UECs at the time of implantation. However, the adherens junction (zonula adherens), which is primarily responsible for cell-cell adhesion, has been little studied during early pregnancy. This study investigated the adherens junction in rat UECs during the early stages of normal pregnancy and ovarian hyperstimulated (OH) pregnancy using transmission electron microscopy. The adherens junction is present in UECs at the time of fertilisation, but is lost at the time of blastocyst implantation during normal pregnancy. Interestingly, at the time of implantation after OH, adherens junctions are retained and may impede blastocyst penetration of the epithelium. The adherens junction anchors the actin-based terminal web, which is known to be disrupted in UECs during early pregnancy. However, artificial disruption of the terminal web, using cytochalasin D, did not cause removal of the adherens junction in UECs. This study revealed that adherens junction disassembly occurs during early pregnancy, but that this process does not occur during OH pregnancy. Such disassembly does not appear to depend on the disruption of the terminal web. Copyright © 2015 Elsevier GmbH. All rights reserved.

Structure activity relationship of synaptic and junctional neurotransmission.

PubMed

Goyal, Raj K; Chaudhury, Arun

2013-06-01

Chemical neurotransmission may include transmission to local or remote sites. Locally, contact between 'bare' portions of the bulbous nerve terminal termed a varicosity and the effector cell may be in the form of either synapse or non-synaptic contact. Traditionally, all local transmissions between nerves and effector cells are considered synaptic in nature. This is particularly true for communication between neurons. However, communication between nerves and other effectors such as smooth muscles has been described as nonsynaptic or junctional in nature. Nonsynaptic neurotransmission is now also increasingly recognized in the CNS. This review focuses on the relationship between structure and function that orchestrate synaptic and junctional neurotransmissions. A synapse is a specialized focal contact between the presynaptic active zone capable of ultrafast release of soluble transmitters and the postsynaptic density that cluster ionotropic receptors. The presynaptic and the postsynaptic areas are separated by the 'closed' synaptic cavity. The physiological hallmark of the synapse is ultrafast postsynaptic potentials lasting milliseconds. In contrast, junctions are juxtapositions of nerve terminals and the effector cells without clear synaptic specializations and the junctional space is 'open' to the extracellular space. Based on the nature of the transmitters, postjunctional receptors and their separation from the release sites, the junctions can be divided into 'close' and 'wide' junctions. Functionally, the 'close' and the 'wide' junctions can be distinguished by postjunctional potentials lasting ~1s and tens of seconds, respectively. Both synaptic and junctional communications are common between neurons; however, junctional transmission is the rule at many neuro-non-neural effectors. Published by Elsevier B.V.

Structure activity relationship of synaptic and junctional neurotransmission

PubMed Central

Goyal, Raj K; Chaudhury, Arun

2013-01-01

Chemical neurotransmission may include transmission to local or remote sites. Locally, contact between ‘bare’ portions of the bulbous nerve terminal termed a varicosity and the effector cell may be in the form of either synapse or non-synaptic contact. Traditionally, all local transmissions between nerves and effector cells are considered synaptic in nature. This is particularly true for communication between neurons. However, communication between nerves and other effectors such as smooth muscles has been described as nonsynaptic or junctional in nature. Nonsynaptic neurotransmission is now also increasing recognized in the CNS. This review focuses on the relationship between structure and function that orchestrate synaptic and junctional neurotransmissions. A synapse is a specialized focal contact between the presynaptic active zone capable for ultrafast release of soluble transmitters and the postsynaptic density that cluster ionotropic receptors. The presynaptic and the postsynaptic areas are separated by the ‘closed’ synaptic cavity. The physiological hallmark of the synapse is ultrafast postsynaptic potentials lasting in milliseconds. In contrast, junctions are juxtapositions of nerve terminals and the effector cells without clear synaptic specializations and the junctional space is ‘open’ to the extracellular space. Based on the nature of the transmitters, postjunctional receptors and their separation from the release sites, the junctions can be divided into ‘close’ and ‘wide’ junctions. Functionally, the ‘close’ and the ‘wide’ junctions can be distinguished by postjunctional potentials lasting ~1 second and 10s of seconds, respectively. Both synaptic and junctional communications are common between neurons; however, junctional transmission is the rule at many neuro-non-neural effectors. PMID:23535140

Activation of Akt, not connexin 43 protein ubiquitination, regulates gap junction stability.

PubMed

Dunn, Clarence A; Su, Vivian; Lau, Alan F; Lampe, Paul D

2012-01-20

The pore-forming gap junctional protein connexin 43 (Cx43) has a short (1-3 h) half-life in cells in tissue culture and in whole tissues. Although critical for cellular function in all tissues, the process of gap junction turnover is not well understood because treatment of cells with a proteasomal inhibitor results in larger gap junctions but little change in total Cx43 protein whereas lysosomal inhibitors increase total, mostly nonjunctional Cx43. To better understand turnover and identify potential sites of Cx43 ubiquitination, we prepared constructs of Cx43 with different lysines converted to arginines. However, when transfected into cells, a mutant version of Cx43 with all lysines converted to arginines behaved similarly to wild type in the presence of proteasomal and lysosomal inhibitors, indicating that ubiquitination of Cx43 did not appear to be playing a role in gap junction stability. Through the use of inhibitors and dominant negative constructs, we found that Akt (protein kinase B) activity controlled gap junction stability and was necessary to form larger stable gap junctions. Akt activation was increased upon proteasomal inhibition and resulted in phosphorylation of Cx43 at Akt phosphorylation consensus sites. Thus, we conclude that Cx43 ubiquitination is not necessary for the regulation of Cx43 turnover; rather, Akt activity, probably through direct phosphorylation of Cx43, controls gap junction stability. This linkage of a kinase involved in controlling cell survival and growth to gap junction stability may mechanistically explain how gap junctions and Akt play similar regulatory roles.

Gap junctional communication modulates gene transcription by altering the recruitment of Sp1 and Sp3 to connexin-response elements in osteoblast promoters

NASA Technical Reports Server (NTRS)

Stains, Joseph P.; Lecanda, Fernando; Screen, Joanne; Towler, Dwight A.; Civitelli, Roberto

2003-01-01

Loss-of-function mutations of gap junction proteins, connexins, represent a mechanism of disease in a variety of tissues. We have shown that recessive (gene deletion) or dominant (connexin45 overexpression) disruption of connexin43 function results in osteoblast dysfunction and abnormal expression of osteoblast genes, including down-regulation of osteocalcin transcription. To elucidate the molecular mechanisms of gap junction-sensitive transcriptional regulation, we systematically analyzed the rat osteocalcin promoter for sensitivity to gap junctional intercellular communication. We identified an Sp1/Sp3 containing complex that assembles on a minimal element in the -70 to -57 region of the osteocalcin promoter in a gap junction-dependent manner. This CT-rich connexin-response element is necessary and sufficient to confer gap junction sensitivity to the osteocalcin proximal promoter. Repression of osteocalcin transcription occurs as a result of displacement of the stimulatory Sp1 by the inhibitory Sp3 on the promoter when gap junctional communication is perturbed. Modulation of Sp1/Sp3 recruitment also occurs on the collagen Ialpha1 promoter and translates into gap junction-sensitive transcriptional control of collagen Ialpha1 gene expression. Thus, regulation of Sp1/Sp3 recruitment to the promoter may represent a potential general mechanism for transcriptional control of target genes by signals passing through gap junctions.

Mapping the Transmission Functions of Single-Molecule Junctions.

PubMed

Capozzi, Brian; Low, Jonathan Z; Xia, Jianlong; Liu, Zhen-Fei; Neaton, Jeffrey B; Campos, Luis M; Venkataraman, Latha

2016-06-08

Charge transport phenomena in single-molecule junctions are often dominated by tunneling, with a transmission function dictating the probability that electrons or holes tunnel through the junction. Here, we present a new and simple technique for measuring the transmission functions of molecular junctions in the coherent tunneling limit, over an energy range of 1.5 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different exposed areas, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junction Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction's transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed from first principles. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.

Thalamic modulation of cingulate seizure activity via the regulation of gap junctions in mice thalamocingulate slice.

PubMed

Chang, Wei-Pang; Wu, José Jiun-Shian; Shyu, Bai-Chuang

2013-01-01

The thalamus is an important target for deep brain stimulation in the treatment of seizures. However, whether the modulatory effect of thalamic inputs on cortical seizures occurs through the modulation of gap junctions has not been previously studied. Therefore, we tested the effects of different gap junction blockers and couplers in a drug-resistant seizure model and studied the role of gap junctions in the thalamic modulation on cortical seizures. Multielectrode array and calcium imaging were used to record the cortical seizures induced by 4-aminopyridine (250 µM) and bicuculline (5-50 µM) in a novel thalamocingulate slice preparation. Seizure-like activity was significantly attenuated by the pan-gap junction blockers carbenoxolone and octanol and specific neuronal gap junction blocker mefloquine. The gap junction coupler trimethylamine significantly enhanced seizure-like activity. Gap junction blockers did not influence the initial phase of seizure-like activity, but they significantly decreased the amplitude and duration of the maintenance phase. The development of seizures is regulated by extracellular potassium concentration. Carbenoxolone partially restored the amplitude and duration after removing the thalamic inputs. A two-dimensional current source density analysis showed that the sink and source signals shifted to deeper layers after removing the thalamic inputs during the clonic phase. These results indicate that the regulatory mechanism of deep brain stimulation in the thalamus occurs partially though gap junctions.

Spin-valve Josephson junctions for cryogenic memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Bertus, T. J.; Glick, Joseph A.; Loloee, R.; Pratt, W. P.; Birge, Norman O.

2018-01-01

Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be controllably toggled between zero and π by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the superconducting quantum interference device (SQUID) used for phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a "phase diagram" for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.

Thalamic Modulation of Cingulate Seizure Activity Via the Regulation of Gap Junctions in Mice Thalamocingulate Slice

PubMed Central

Chang, Wei-Pang; Wu, José Jiun-Shian; Shyu, Bai-Chuang

2013-01-01

The thalamus is an important target for deep brain stimulation in the treatment of seizures. However, whether the modulatory effect of thalamic inputs on cortical seizures occurs through the modulation of gap junctions has not been previously studied. Therefore, we tested the effects of different gap junction blockers and couplers in a drug-resistant seizure model and studied the role of gap junctions in the thalamic modulation on cortical seizures. Multielectrode array and calcium imaging were used to record the cortical seizures induced by 4-aminopyridine (250 µM) and bicuculline (5–50 µM) in a novel thalamocingulate slice preparation. Seizure-like activity was significantly attenuated by the pan-gap junction blockers carbenoxolone and octanol and specific neuronal gap junction blocker mefloquine. The gap junction coupler trimethylamine significantly enhanced seizure-like activity. Gap junction blockers did not influence the initial phase of seizure-like activity, but they significantly decreased the amplitude and duration of the maintenance phase. The development of seizures is regulated by extracellular potassium concentration. Carbenoxolone partially restored the amplitude and duration after removing the thalamic inputs. A two-dimensional current source density analysis showed that the sink and source signals shifted to deeper layers after removing the thalamic inputs during the clonic phase. These results indicate that the regulatory mechanism of deep brain stimulation in the thalamus occurs partially though gap junctions. PMID:23690968

Robustness effect of gap junctions between Golgi cells on cerebellar cortex oscillations

PubMed Central

2011-01-01

Background Previous one-dimensional network modeling of the cerebellar granular layer has been successfully linked with a range of cerebellar cortex oscillations observed in vivo. However, the recent discovery of gap junctions between Golgi cells (GoCs), which may cause oscillations by themselves, has raised the question of how gap-junction coupling affects GoC and granular-layer oscillations. To investigate this question, we developed a novel two-dimensional computational model of the GoC-granule cell (GC) circuit with and without gap junctions between GoCs. Results Isolated GoCs coupled by gap junctions had a strong tendency to generate spontaneous oscillations without affecting their mean firing frequencies in response to distributed mossy fiber input. Conversely, when GoCs were synaptically connected in the granular layer, gap junctions increased the power of the oscillations, but the oscillations were primarily driven by the synaptic feedback loop between GoCs and GCs, and the gap junctions did not change oscillation frequency or the mean firing rate of either GoCs or GCs. Conclusion Our modeling results suggest that gap junctions between GoCs increase the robustness of cerebellar cortex oscillations that are primarily driven by the feedback loop between GoCs and GCs. The robustness effect of gap junctions on synaptically driven oscillations observed in our model may be a general mechanism, also present in other regions of the brain. PMID:22330240

Smad ubiquitination regulatory factor-2 controls gap junction intercellular communication by modulating endocytosis and degradation of connexin43.

PubMed

Fykerud, Tone Aase; Kjenseth, Ane; Schink, Kay Oliver; Sirnes, Solveig; Bruun, Jarle; Omori, Yasufumi; Brech, Andreas; Rivedal, Edgar; Leithe, Edward

2012-09-01

Gap junctions consist of arrays of intercellular channels that enable adjacent cells to communicate both electrically and metabolically. Gap junction channels are made of a family of integral membrane proteins called connexins, of which the best-studied member is connexin43. Gap junctions are dynamic plasma membrane domains, and connexin43 has a high turnover rate in most tissue types. However, the mechanisms involved in the regulation of connexin43 endocytosis and transport to lysosomes are still poorly understood. Here, we demonstrate by live-cell imaging analysis that treatment of cells with 12-O-tetradecanoylphorbol 13-acetate (TPA) induces endocytosis of subdomains of connexin43 gap junctions. The internalized, connexin43-enriched vesicles were found to fuse with early endosomes, which was followed by transport of connexin43 to the lumen of early endosomes. The HECT E3 ubiquitin ligase smad ubiquitination regulatory factor-2 (Smurf2) was found to be recruited to connexin43 gap junctions in response to TPA treatment. Depletion of Smurf2 by small interfering RNA resulted in enhanced levels of connexin43 gap junctions between adjacent cells and increased gap junction intercellular communication. Smurf2 depletion also counteracted the TPA-induced endocytosis and degradation of connexin43. Collectively, these data identify Smurf2 as a novel regulator of connexin43 gap junctions.

Mixing Hot and Cold Water Streams at a T-Junction

ERIC Educational Resources Information Center

Sharp, David; Zhang, Mingqian; Xu, Zhenghe; Ryan, Jim; Wanke, Sieghard; Afacan, Artin

2008-01-01

A simple mixing of a hot- and cold-water stream at a T-junction was investigated. The main objective was to use mass and energy balance equations to predict mass low rates and the temperature of the mixed stream after the T-junction, and then compare these with the measured values. Furthermore, the thermocouple location after the T-junction and…

A Comment on the Dependence of LED's Efficiency on the Junction Ideality Factor

ERIC Educational Resources Information Center

Sethi, Anubhav; Gupta, Yashika; Arun, P.

2018-01-01

P-n junctions form the basic building blocks for any semiconductor device. Therefore, the complete understanding of the junction characteristics is very important. Although being a widely discussed topic in electronics, there are still some gaps such as finding the value and significance of the junction ideality factor, that needs to be addressed.…

String junction as a baryonic constituent

NASA Astrophysics Data System (ADS)

Kalashnikova, Yu. S.; Nefediev, A. V.

1996-02-01

We extend the model for QCD string with quarks to consider the Mercedes Benz string configuration describing the three-quark baryon. Under the assumption of adiabatic separation of quark and string junction motion we formulate and solve the classical equation of motion for the junction. We dare to quantize the motion of the junction, and discuss the impact of these modes on the baryon spectra.

Quantum shot noise in tunnel junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Mottola, E.; Schoen, G.

1983-01-01

The current and voltage fluctuations in a normal tunnel junction are calculated from microscopic theory. The power spectrum can deviate from the familiar Johnson-Nyquist form when the self-capacitance of the junction is small, at low temperatures permitting experimental verification. The deviation reflects the discrete nature of the charge transfer across the junction and should be present in a wide class of similar systems.

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE PAGES

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.; ...

2017-10-18

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Berberine potentizes apoptosis induced by X-rays irradiation probably through modulation of gap junctions.

PubMed

Liu, Bing; Wang, Qin; Yuan, Dong-dong; Hong, Xiao-ting; Tao, Liang

2011-04-01

Clinical combination of some traditional Chinese medical herbs, including berberine, with irradiation is demonstrated to improve efficacy of tumor radiotherapy, yet the mechanisms for such effect remain largely unknown. The present study investigated the effect of berberine on apoptosis induced by X-rays irradiation and the relation between this effect and gap junction intercellular communication (GJIC). The role of gap junctions in the modulation of X-rays irradiation-induced apoptosis was explored by manipulation of connexin (Cx) expression, and gap junction function, using oleamide, a GJIC inhibitor, and berberine. In transfected HeLa cells, Cx32 expression increased apoptosis induced by X-rays irradiation, while inhibition of gap junction by oleamide reduced the irradiation responses, indicating the dependence of X-rays irradiation-induced apoptosis on GJIC. Berberine, at the concentrations without cytotoxicity, enhanced apoptosis induced by irradiation only in the presence of functional gap junctions. These results suggest that berberine potentizes cell apoptosis induced by X-rays irradiation, probably through enhancement of gap junction activity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venkadesh, S.; Mandal, P.K.; Gautham, N., E-mail: n_gautham@hotmail.com

Highlights: {yields} This is the first crystal structure of a four-way junction with sticky ends. {yields} Four junction structures bind to each other and form a rhombic cavity. {yields} Each rhombus binds to others to form 'infinite' 2D tiles. {yields} This is an example of bottom-up fabrication of a DNA nano-lattice. -- Abstract: We report here the crystal structure of the partially self-complementary decameric sequence d(CGGCGGCCGC), which self assembles to form a four-way junction with sticky ends. Each junction binds to four others through Watson-Crick base pairing at the sticky ends to form a rhombic structure. The rhombuses bind tomore » each other and form two dimensional tiles. The tiles stack to form the crystal. The crystal diffracted in the space group P1 to a resolution of 2.5 A. The junction has the anti-parallel stacked-X conformation like other junction structures, though the formation of the rhombic net noticeably alters the details of the junction geometry.« less

Multi-junction solar cell device

DOEpatents

Friedman, Daniel J.; Geisz, John F.

2007-12-18

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Structure–property relationships in atomic-scale junctions: Histograms and beyond

DOE PAGES

Mark S. Hybertsen; Venkataraman, Latha

2016-03-03

Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less

Structure–property relationships in atomic-scale junctions: Histograms and beyond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mark S. Hybertsen; Venkataraman, Latha

Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less

Holliday Junction Thermodynamics and Structure: Coarse-Grained Simulations and Experiments

NASA Astrophysics Data System (ADS)

Wang, Wujie; Nocka, Laura M.; Wiemann, Brianne Z.; Hinckley, Daniel M.; Mukerji, Ishita; Starr, Francis W.

2016-03-01

Holliday junctions play a central role in genetic recombination, DNA repair and other cellular processes. We combine simulations and experiments to evaluate the ability of the 3SPN.2 model, a coarse-grained representation designed to mimic B-DNA, to predict the properties of DNA Holliday junctions. The model reproduces many experimentally determined aspects of junction structure and stability, including the temperature dependence of melting on salt concentration, the bias between open and stacked conformations, the relative populations of conformers at high salt concentration, and the inter-duplex angle (IDA) between arms. We also obtain a close correspondence between the junction structure evaluated by all-atom and coarse-grained simulations. We predict that, for salt concentrations at physiological and higher levels, the populations of the stacked conformers are independent of salt concentration, and directly observe proposed tetrahedral intermediate sub-states implicated in conformational transitions. Our findings demonstrate that the 3SPN.2 model captures junction properties that are inaccessible to all-atom studies, opening the possibility to simulate complex aspects of junction behavior.

Gap junction plasticity as a mechanism to regulate network-wide oscillations

PubMed Central

Nicola, Wilten; Clopath, Claudia

2018-01-01

Cortical oscillations are thought to be involved in many cognitive functions and processes. Several mechanisms have been proposed to regulate oscillations. One prominent but understudied mechanism is gap junction coupling. Gap junctions are ubiquitous in cortex between GABAergic interneurons. Moreover, recent experiments indicate their strength can be modified in an activity-dependent manner, similar to chemical synapses. We hypothesized that activity-dependent gap junction plasticity acts as a mechanism to regulate oscillations in the cortex. We developed a computational model of gap junction plasticity in a recurrent cortical network based on recent experimental findings. We showed that gap junction plasticity can serve as a homeostatic mechanism for oscillations by maintaining a tight balance between two network states: asynchronous irregular activity and synchronized oscillations. This homeostatic mechanism allows for robust communication between neuronal assemblies through two different mechanisms: transient oscillations and frequency modulation. This implies a direct functional role for gap junction plasticity in information transmission in cortex. PMID:29529034

On the self-association potential of transmembrane tight junction proteins.

PubMed

Blasig, I E; Winkler, L; Lassowski, B; Mueller, S L; Zuleger, N; Krause, E; Krause, G; Gast, K; Kolbe, M; Piontek, J

2006-02-01

Tight junctions seal intercellular clefts via membrane-related strands, hence, maintaining important organ functions. We investigated the self-association of strand-forming transmembrane tight junction proteins. The regulatory tight junction protein occludin was differently tagged and cotransfected in eucaryotic cells. These occludins colocalized within the plasma membrane of the same cell, coprecipitated and exhibited fluorescence resonance energy transfer. Differently tagged strand-forming claudin-5 also colocalized in the plasma membrane of the same cell and showed fluorescence resonance energy transfer. This demonstrates self-association in intact cells both of occludin and claudin-5 in one plasma membrane. In search of dimerizing regions of occludin, dimerization of its cytosolic C-terminal coiledcoil domain was identified. In claudin-5, the second extracellular loop was detected as a dimer. Since the transmembrane junctional adhesion molecule also is known to dimerize, the assumption that homodimerization of transmembrane tight junction proteins may serve as a common structural feature in tight junction assembly is supported.

Entropy Flow Through Near-Critical Quantum Junctions

NASA Astrophysics Data System (ADS)

Friedan, Daniel

2017-05-01

This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

The complex between a four-way DNA junction and T7 endonuclease I

PubMed Central

Déclais, Anne-Cécile; Fogg, Jonathan M.; Freeman, Alasdair D.J.; Coste, Franck; Hadden, Jonathan M.; Phillips, Simon E.V.; Lilley, David M.J.

2003-01-01

The junction-resolving enzyme endonuclease I is selective for the structure of the DNA four-way (Holliday) junction. The enzyme binds to a four-way junction in two possible orientations, with a 4:1 ratio, opening the DNA structure at the centre and changing the global structure into a 90° cross of approximately coaxial helices. The nuclease cleaves the continuous strands of the junction in each orientation. Binding leads to pronounced regions of protection of the DNA against hydroxyl radical attack. Using all this information together with the known structure of the enzyme and the structure of the BglI–DNA complex, we have constructed a model of the complex of endonuclease I and a DNA junction. This shows how the enzyme is selective for the structure of a four-way junction, such that both continuous strands can be accommodated into the two active sites so that a productive resolution event is possible. PMID:12628932

Ballistic Josephson junctions based on CVD graphene

NASA Astrophysics Data System (ADS)

Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

2018-04-01

Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

STIM proteins and the endoplasmic reticulum-plasma membrane junctions.

PubMed

Carrasco, Silvia; Meyer, Tobias

2011-01-01

Eukaryotic organelles can interact with each other through stable junctions where the two membranes are kept in close apposition. The junction that connects the endoplasmic reticulum to the plasma membrane (ER-PM junction) is unique in providing a direct communication link between the ER and the PM. In a recently discovered signaling process, STIM (stromal-interacting molecule) proteins sense a drop in ER Ca(2+) levels and directly activate Orai PM Ca(2+) channels across the junction space. In an inverse process, a voltage-gated PM Ca(2+) channel can directly open ER ryanodine-receptor Ca(2+) channels in striated-muscle cells. Although ER-PM junctions were first described 50 years ago, their broad importance in Ca(2+) signaling, as well as in the regulation of cholesterol and phosphatidylinositol lipid transfer, has only recently been realized. Here, we discuss research from different fields to provide a broad perspective on the structures and unique roles of ER-PM junctions in controlling signaling and metabolic processes.

What happens in Josephson junctions at high critical current densities

NASA Astrophysics Data System (ADS)

Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

2017-07-01

The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

A multilayered approach to superconducting tunnel junction x ray detectors

NASA Technical Reports Server (NTRS)

Rippert, E. D.; Song, S. N.; Ketterson, J. B.; Maglic, S. R.; Lomatch, S.; Thomas, C.; Cheida, M. A.; Ulmer, M. P.

1992-01-01

'First generation' superconducting tunnel junction X-ray detectors (characterized by a single tunnel junction in direct contact with its substrate, with totally external amplification) remain more than an order of magnitude away from their theoretical energy resolutions which are in the order of eV's. The difficulties that first generation devices are encountering are being attacked by a 'second generation' of superconducting X-ray detector designs including quasiparticle trapping configurations and Josephson junction arrays. A second generation design concept, the multilayered superconducting tunnel junction X-ray detector, consisting of tens to hundreds of tunnel junctions stacked on top of one another (a superlattice), is presented. Some of the possibilities of this engineered materials approach include the tuning of phonon transmission characteristics of the material, suppression of parasitic quasiparticle trapping and intrinsic amplification.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

PubMed

Lee, Woochul; Reddy, Pramod

2011-12-02

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

Variability metrics in Josephson Junction fabrication for Quantum Computing circuits

NASA Astrophysics Data System (ADS)

Rosenblatt, Sami; Hertzberg, Jared; Brink, Markus; Chow, Jerry; Gambetta, Jay; Leng, Zhaoqi; Houck, Andrew; Nelson, J. J.; Plourde, Britton; Wu, Xian; Lake, Russell; Shainline, Jeff; Pappas, David; Patel, Umeshkumar; McDermott, Robert

Multi-qubit gates depend on the relative frequencies of the qubits. To reliably build multi-qubit devices therefore requires careful fabrication of Josephson junctions in order to precisely set their critical currents. The Ambegaokar-Baratoff relation between tunnel conductance and critical current implies a correlation between qubit frequency spread and tunnel junction resistance spread. Here we discuss measurement of large numbers of tunnel junctions to assess these resistance spreads, which can exceed 5% of mean resistance. With the goal of minimizing these spreads, we investigate process parameters such as lithographic junction area, evaporation and masking scheme, oxidation conditions, and substrate choice, as well as test environment, design and setup. In addition, trends of junction resistance with temperature are compared with theoretical models for further insights into process and test variability.

Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.

PubMed

Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin

2017-06-01

With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding

NASA Astrophysics Data System (ADS)

Morita, Sho; Liang, Jianbo; Matsubara, Moeko; Dhamrin, Marwan; Nishio, Yoshitaka; Shigekawa, Naoteru

2018-02-01

We fabricate 17-µm-thick Al foil/n-4H-SiC Schottky junctions by surface-activated bonding. Their current-voltage and capacitance-voltage characteristics are compared with those of Schottky junctions fabricated by evaporating Al layers on n-4H-SiC epilayers. We find that the ideality factor of Al foil/SiC junctions is larger than that of conventional junctions, which is due to the irradiation of the fast atom beam (FAB) of Ar. The ideality factor of Al foil/SiC junctions is improved by annealing at 400 °C. We also find that the Schottky barrier height is increased by FAB irradiation, which is likely to be due to the negative charges formed at SiC surfaces.

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

NASA Technical Reports Server (NTRS)

Heinbockel, John H.; Walker, Gilbert H.

1988-01-01

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

Extended defects and hydrogen interactions in ion implanted silicon

NASA Astrophysics Data System (ADS)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (<650°C) defect dissolution and defect injection dominates, resulting in increased junction depths. At higher anneal temperatures, however, repair dominates over defect injection resulting in shallower junctions. Hydrogenation experiments shows that hydrogen enhances dopant activation and reduces TED at low anneal temperatures (<550°C). At anneal temperatures >550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for along time (300min). Also presented is the recipe for formation of multiple cavity layers and the electrical and optical properties of these cavities. Electrically, these cavities are metastable, with two strong minority carrier peaks formed by multiple defect levels. Photoluminescence measurements reveal a strong 0.8eV photon peak.

Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes

NASA Technical Reports Server (NTRS)

Garcia, Edouard; Jacobson, Brian R.; Hu, Qing

1993-01-01

We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.

Measurement of Single Channel Currents from Cardiac Gap Junctions

NASA Astrophysics Data System (ADS)

Veenstra, Richard D.; Dehaan, Robert L.

1986-08-01

Cardiac gap junctions consist of arrays of integral membrane proteins joined across the intercellular cleft at points of cell-to-cell contact. These junctional proteins are thought to form pores through which ions can diffuse from cytosol to cytosol. By monitoring whole-cell currents in pairs of embryonic heart cells with two independent patch-clamp circuits, the properties of single gap junction channels have been investigated. These channels had a conductance of about 165 picosiemens and underwent spontaneous openings and closings that were independent of voltage. Channel activity and macroscopic junctional conductance were both decreased by the uncoupling agent 1-octanol.

‘Gap Junctions and Cancer: Communicating for 50 Years’

PubMed Central

Aasen, Trond; Mesnil, Marc; Naus, Christian C.; Lampe, Paul D.; Laird, Dale W.

2017-01-01

Fifty years ago, tumour cells were found to lack electrical coupling, leading to the hypothesis that loss of direct intercellular communication is commonly associated with cancer onset and progression. Subsequent studies linked this phenomenon to gap junctions composed of connexin proteins. While many studies support the notion that connexins are tumour suppressors, recent evidence suggests that, in some tumour types, they may facilitate specific stages of tumour progression through both junctional and non-junctional signalling pathways. This Timeline article highlights the milestones connecting gap junctions to cancer, and underscores important unanswered questions, controversies and therapeutic opportunities in the field. PMID:27782134

AmeriFlux US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction

DOE Data Explorer

Randerson, James [University of California, Irvine

2016-01-01

This is the AmeriFlux version of the carbon flux data for the site US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction. Site Description - The Delta Junction 1920 Control site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. In 2001, total aboveground biomass consisted almost entirely of black spruce (Picea mariana).

Statistical evidence of strain induced breaking of metallic point contacts

NASA Astrophysics Data System (ADS)

Alwan, Monzer; Candoni, Nadine; Dumas, Philippe; Klein, Hubert R.

2013-06-01

A scanning tunneling microscopy in break junction regime and a mechanically controllable break junction are used to acquire thousands of conductance-elongation curves by stretching until breaking and re-connecting Au junctions. From a robust statistical analysis performed on large sets of experiments, parameters such as lifetime, elongation and occurrence probabilities are extracted. The analysis of results obtained for different stretching speeds of the electrodes indicates that the breaking mechanism of di- and mono-atomic junction is identical, and that the junctions undergo atomic rearrangement during their stretching and at the moment of breaking.

Simulation and measurement of a Ka-band HTS MMIC Josephson junction mixer

NASA Astrophysics Data System (ADS)

Zhang, Ting; Pegrum, Colin; Du, Jia; Guo, Yingjie Jay

2017-01-01

We report modeling and simulation results for a Ka band high-temperature superconducting (HTS) monolithic microwave integrated circuit (MMIC) Josephson junction mixer. A Verilog-A model of a Josephson junction is established and imported into the system simulator to realize a full HTS MMIC circuit simulation containing the HTS passive circuit models. Impedance matching optimization between the junction and passive devices is investigated. Junction DC I-V characteristics, current and local oscillator bias conditions and mixing performance are simulated and compared with the experimental results. Good agreement is obtained between the simulation and measurement results.

Nature and electronic properties of Y-junctions in CNTs and N-doped CNTs obtained by the pyrolysis of organometallic precursors

NASA Astrophysics Data System (ADS)

Deepak, F. L.; John, Neena Susan; Govindaraj, A.; Kulkarni, G. U.; Rao, C. N. R.

2005-08-01

Carbon nanotubes (CNTs) and N-doped CNTs with Y-junctions have been prepared by the pyrolysis of nickelocene-thiophene and nickel phthalocyanine-thiophene mixtures, respectively, the latter being reported for the first time. The junctions are free from the presence of sulfur and contain only carbon or carbon and nitrogen. The electronic properties of the junction nanotubes have been investigated by scanning tunneling microscopy. Tunneling conductance measurements reveal rectifying behavior with regions of coulomb blockade, the effect being much larger in the N-doped junction nanotubes.

Adenosine receptors regulate gap junction coupling of the human cerebral microvascular endothelial cells hCMEC/D3 by Ca2+ influx through cyclic nucleotide‐gated channels

PubMed Central

Bader, Almke; Bintig, Willem; Begandt, Daniela; Klett, Anne; Siller, Ina G.; Gregor, Carola; Schaarschmidt, Frank; Weksler, Babette; Romero, Ignacio; Couraud, Pierre‐Olivier; Hell, Stefan W.

2017-01-01

Key points Gap junction channels are essential for the formation and regulation of physiological units in tissues by allowing the lateral cell‐to‐cell diffusion of ions, metabolites and second messengers.Stimulation of the adenosine receptor subtype A2B increases the gap junction coupling in the human blood–brain barrier endothelial cell line hCMEC/D3.Although the increased gap junction coupling is cAMP‐dependent, neither the protein kinase A nor the exchange protein directly activated by cAMP were involved in this increase.We found that cAMP activates cyclic nucleotide‐gated (CNG) channels and thereby induces a Ca2+ influx, which leads to the increase in gap junction coupling.The report identifies CNG channels as a possible physiological link between adenosine receptors and the regulation of gap junction channels in endothelial cells of the blood–brain barrier. Abstract The human cerebral microvascular endothelial cell line hCMEC/D3 was used to characterize the physiological link between adenosine receptors and the gap junction coupling in endothelial cells of the blood–brain barrier. Expressed adenosine receptor subtypes and connexin (Cx) isoforms were identified by RT‐PCR. Scrape loading/dye transfer was used to evaluate the impact of the A2A and A2B adenosine receptor subtype agonist 2‐phenylaminoadenosine (2‐PAA) on the gap junction coupling. We found that 2‐PAA stimulated cAMP synthesis and enhanced gap junction coupling in a concentration‐dependent manner. This enhancement was accompanied by an increase in gap junction plaques formed by Cx43. Inhibition of protein kinase A did not affect the 2‐PAA‐related enhancement of gap junction coupling. In contrast, the cyclic nucleotide‐gated (CNG) channel inhibitor l‐cis‐diltiazem, as well as the chelation of intracellular Ca2+ with BAPTA, or the absence of external Ca2+, suppressed the 2‐PAA‐related enhancement of gap junction coupling. Moreover, we observed a 2‐PAA‐dependent activation of CNG channels by a combination of electrophysiology and pharmacology. In conclusion, the stimulation of adenosine receptors in hCMEC/D3 cells induces a Ca2+ influx by opening CNG channels in a cAMP‐dependent manner. Ca2+ in turn induces the formation of new gap junction plaques and a consecutive sustained enhancement of gap junction coupling. The report identifies CNG channels as a physiological link that integrates gap junction coupling into the adenosine receptor‐dependent signalling of endothelial cells of the blood–brain barrier. PMID:28075020

Adenosine receptors regulate gap junction coupling of the human cerebral microvascular endothelial cells hCMEC/D3 by Ca2+ influx through cyclic nucleotide-gated channels.

PubMed

Bader, Almke; Bintig, Willem; Begandt, Daniela; Klett, Anne; Siller, Ina G; Gregor, Carola; Schaarschmidt, Frank; Weksler, Babette; Romero, Ignacio; Couraud, Pierre-Olivier; Hell, Stefan W; Ngezahayo, Anaclet

2017-04-15

Gap junction channels are essential for the formation and regulation of physiological units in tissues by allowing the lateral cell-to-cell diffusion of ions, metabolites and second messengers. Stimulation of the adenosine receptor subtype A 2B increases the gap junction coupling in the human blood-brain barrier endothelial cell line hCMEC/D3. Although the increased gap junction coupling is cAMP-dependent, neither the protein kinase A nor the exchange protein directly activated by cAMP were involved in this increase. We found that cAMP activates cyclic nucleotide-gated (CNG) channels and thereby induces a Ca 2+ influx, which leads to the increase in gap junction coupling. The report identifies CNG channels as a possible physiological link between adenosine receptors and the regulation of gap junction channels in endothelial cells of the blood-brain barrier. The human cerebral microvascular endothelial cell line hCMEC/D3 was used to characterize the physiological link between adenosine receptors and the gap junction coupling in endothelial cells of the blood-brain barrier. Expressed adenosine receptor subtypes and connexin (Cx) isoforms were identified by RT-PCR. Scrape loading/dye transfer was used to evaluate the impact of the A 2A and A 2B adenosine receptor subtype agonist 2-phenylaminoadenosine (2-PAA) on the gap junction coupling. We found that 2-PAA stimulated cAMP synthesis and enhanced gap junction coupling in a concentration-dependent manner. This enhancement was accompanied by an increase in gap junction plaques formed by Cx43. Inhibition of protein kinase A did not affect the 2-PAA-related enhancement of gap junction coupling. In contrast, the cyclic nucleotide-gated (CNG) channel inhibitor l-cis-diltiazem, as well as the chelation of intracellular Ca 2+ with BAPTA, or the absence of external Ca 2+ , suppressed the 2-PAA-related enhancement of gap junction coupling. Moreover, we observed a 2-PAA-dependent activation of CNG channels by a combination of electrophysiology and pharmacology. In conclusion, the stimulation of adenosine receptors in hCMEC/D3 cells induces a Ca 2+ influx by opening CNG channels in a cAMP-dependent manner. Ca 2+ in turn induces the formation of new gap junction plaques and a consecutive sustained enhancement of gap junction coupling. The report identifies CNG channels as a physiological link that integrates gap junction coupling into the adenosine receptor-dependent signalling of endothelial cells of the blood-brain barrier. © 2017 The Authors. The Journal of Physiology © 2017 The Physiological Society.

Possible microplate generation at RRR triple junctions due to the non-circular finite motion of plates relative to each other

NASA Astrophysics Data System (ADS)

Cronin, V. S.

2012-12-01

First generation ideas of the kinematic stability of triple junctions lead to the common belief that the geometry of ridge-ridge-ridge (RRR) triple junctions remains constant over time under conditions of symmetric spreading. Given constant relative motion between each plate pair -- that is, the pole of plate relative motion is fixed to both plates in each pair during finite motion, as assumed in many accounts of plate kinematics -- there would be no boundary mismatch at the triple junction and no apparent kinematic reason why a microplate might develop there. But if, in a given RRR triple junction, the finite motion of one plate as observed from the other plate is not circular (as is generally the case, given the three-plate problem of plate kinematics), the geometry of the ridges and the triple junction will vary with time (Cronin, 1992, Tectonophys 207, 287-301). To explore the possible consequences of non-circular finite motion between plates at an RRR triple junction, a simple model was coded based on the cycloid finite-motion model (e.g., Cronin, 1987, Geology 15, 1006-1009) using NNR-MORVEL56 velocities for individual plates (Argus et al., 2011, G3 12, doi: 10.1029/2011GC003751). Initial assumptions include a spherical Earth, symmetric spreading, and constant angular velocities during the modeled finite time interval. The assumed-constant angular velocity vectors constitute a reference frame for observing finite plate motion. Typical results are [1] that the triple junction migrates relative to a coordinate system fixed to the angular-velocity vectors, [2] ridge axes rotates relative to each other, and [3] a boundary mismatch develops at the synthetic triple junction that might result in microplate nucleation. In a model simulating the Galapagos triple junction between the Cocos, Nazca and Pacific plates whose initial state did not include the Galapagos microplate, the mismatch gap was as much as ~3.4 km during 3 Myr of model displacement (see figure). The centroid of the synthetic triple junction translates ~81 km toward azimuth ~352° in 3 Myr. Of course, the details will vary as different angular velocity vectors are used; however, modeling indicates that non-circular finite relative motion between adjacent plates generally results in boundary mismatches and rotation of ridge segments relative to each other at RRR triple junctions. Left: synthetic Galapagos triple junction at initial model time, without a microplate. Right: synthetic triple junction after 3 Myr displacement, illustrating the resulting boundary mismatch (gap) and rotated ridge axes.

Force and Conductance Spectroscopy of Single Molecule Junctions

NASA Astrophysics Data System (ADS)

Frei, Michael

Investigation of mechanical properties of single molecule junctions is crucial to develop an understanding and enable control of single molecular junctions. This work presents an experimental and analytical approach that enables the statistical evaluation of force and simultaneous conductance data of metallic atomic point contacts and molecular junctions. A conductive atomic force microscope based break junction technique is developed to form single molecular junctions and collect conductance and force data simultaneously. Improvements of the optical components have been achieved through the use of a super-luminescent diode, enabling tremendous increases in force resolution. An experimental procedure to collect data for various molecular junctions has been developed and includes deposition, calibration, and analysis methods. For the statistical analysis of force, novel approaches based on two dimensional histograms and a direct force identification method are presented. The two dimensional method allows for an unbiased evaluation of force events that are identified using corresponding conductance signatures. This is not always possible however, and in these situations, the force based identification of junction rearrangement events is an attractive alternative method. This combined experimental and analytical approach is then applied to three studies: First, the impact of molecular backbones to the mechanical behavior of single molecule junctions is investigated and it is found that junctions formed with identical linkers but different backbone structure result in junctions with varying breaking forces. All molecules used show a clear molecular signature and force data can be evaluated using the 2D method. Second, the effects of the linker group used to attach molecules to gold electrodes are investigated. A study of four alkane molecules with different linkers finds a drastic difference in the evolution of donor-acceptor and covalently bonded molecules respectively. In fact, the covalent bond is found to significantly distort the metal electrode rearrangement such that junction rearrangement events can no longer be identified with a clean and well defined conductance signature. For this case, the force based identification process is used. Third, results for break junction measurements with different metals are presented. It is found that silver and palladium junctions rupture with forces different from those of gold contacts. In the case of silver experiments in ambient conditions, we can also identify oxygen impurities in the silver contact formation process, leading to force and conductance measurements of silver-oxygen structures. For the future, this work provides an experimental and analytical foundation that will enable insights into single molecule systems not previously accessible.

Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

NASA Astrophysics Data System (ADS)

Huang, Yin; Min, Daomin; Li, Shengtao; Li, Zhen; Xie, Dongri; Wang, Xuan; Lin, Shengjun

2017-06-01

The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al2O3 microcomposite was investigated. Epoxy resin/Al2O3 microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

Reciprocal capacitance transients?

NASA Astrophysics Data System (ADS)

Gfroerer, Tim; Simov, Peter; Wanlass, Mark

2007-03-01

When the reverse bias across a semiconductor diode is changed, charge carriers move to accommodate the appropriate depletion thickness, producing a simultaneous change in the device capacitance. Transient capacitance measurements can reveal inhibited carrier motion due to trapping, where the depth of the trap can be evaluated using the temperature-dependent escape rate. However, when we employ this technique on a GaAs0.72P0.28 n+/p diode (which is a candidate for incorporation in multi-junction solar cells), we observe a highly non-exponential response under a broad range of experimental conditions. Double exponential functions give good fits, but lead to non-physical results. The deduced rates depend on the observation time window and fast and slow rates, which presumably correspond to deep and shallow levels, have identical activation energies. Meanwhile, we have discovered a universal linear relationship between the inverse of the capacitance and time. An Arrhenius plot of the slope of the reciprocal of the transient yields an activation energy of approximately 0.4 eV, independent of the observation window and other experimental conditions. The reciprocal behavior leads us to hypothesize that hopping, rather than escape into high-mobility bands, may govern the transport of trapped holes in this system.

Control of the Intrinsic Sensor Response to Volatile Organic Compounds with Fringing Electric Fields.

PubMed

Henning, Alex; Swaminathan, Nandhini; Vaknin, Yonathan; Jurca, Titel; Shimanovich, Klimentiy; Shalev, Gil; Rosenwaks, Yossi

2018-01-26

The ability to control surface-analyte interaction allows tailoring chemical sensor sensitivity to specific target molecules. By adjusting the bias of the shallow p-n junctions in the electrostatically formed nanowire (EFN) chemical sensor, a multiple gate transistor with an exposed top dielectric layer allows tuning of the fringing electric field strength (from 0.5 × 10 7 to 2.5 × 10 7 V/m) above the EFN surface. Herein, we report that the magnitude and distribution of this fringing electric field correlate with the intrinsic sensor response to volatile organic compounds. The local variations of the surface electric field influence the analyte-surface interaction affecting the work function of the sensor surface, assessed by Kelvin probe force microscopy on the nanometer scale. We show that the sensitivity to fixed vapor analyte concentrations can be nullified and even reversed by varying the fringing field strength, and demonstrate selectivity between ethanol and n-butylamine at room temperature using a single transistor without any extrinsic chemical modification of the exposed SiO 2 surface. The results imply an electric-field-controlled analyte reaction with a dielectric surface extremely compelling for sensitivity and selectivity enhancement in chemical sensors.

Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

NASA Astrophysics Data System (ADS)

Sun, X.; Kolawa, E.; Im, S.; Garland, C.; Nicolet, M.-A.

Two ternary films about 100 nm thick, Ti34Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p junction diode and a Cu overlayer, this material is effective up to 700 °C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850 °C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance.

Seismogenesis of dual subduction beneath Kanto, central Japan controlled by fluid release.

PubMed

Ji, Yingfeng; Yoshioka, Shoichi; Manea, Vlad C; Manea, Marina

2017-12-04

Dual subduction represents an unusual case of subduction where one oceanic plate subducts on top of another, creating a highly complex tectonic setting. Because of the complex interaction between the two subducted plates, the origin of seismicity in such region is still not fully understood. Here we investigate the thermal structure of dual subduction beneath Kanto, central Japan formed as a consequence of a unique case of triple trench junction. Using high-resolution three-dimensional thermo-mechanical models tailored for the specific dual subduction settings beneath Kanto, we show that, compared with single-plate subduction systems, subduction of double slabs produces a strong variation of mantle flow, thermal and fluid release pattern that strongly controls the regional seismicity distribution. Here the deepening of seismicity in the Pacific slab located under the Philippine Sea slab is explained by delaying at greater depths (~150 km depth) of the eclogitization front in this region. On the other hand, the shallower seismicity observed in the Philippine Sea slab is related to a young and warm plate subduction and probably to the presence of a hot mantle flow traveling underneath the slab and then moving upward on top of the slab.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

DTIC Science & Technology

2015-08-27

photodiodes with different cutoff wavelengths connected in series with tunnel diodes between adjacent photodiodes. The LEDs optically bias the inactive...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...during this project, including initial demonstrations of optical addressing, tunnel junction studies and multicolor device characterization

Unconventional Josephson effect in hybrid superconductor-topological insulator devices.

PubMed

Williams, J R; Bestwick, A J; Gallagher, P; Hong, Seung Sae; Cui, Y; Bleich, Andrew S; Analytis, J G; Fisher, I R; Goldhaber-Gordon, D

2012-08-03

We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.

The effector and scaffolding proteins AF6 and MUPP1 interact with connexin36 and localize at gap junctions that form electrical synapses in rodent brain.

PubMed

Li, X; Lynn, B D; Nagy, J I

2012-01-01

Electrical synapses formed by neuronal gap junctions composed of connexin36 (Cx36) occur in most major structures in the mammalian central nervous system. These synapses link ensembles of neurons and influence their network properties. Little is known about the macromolecular constituents of neuronal gap junctions or how transmission through electrical synapses is regulated at the level of channel conductance or gap junction assembly/disassembly. Such knowledge is a prerequisite to understanding the roles of gap junctions in neuronal circuitry. Gap junctions share similarities with tight and adhesion junctions in that all three reside at close plasma membrane appositions, and therefore may associate with similar structural and regulatory proteins. Previously, we reported that the tight junction-associated protein zonula occludens-1 (ZO-1) interacts with Cx36 and is localized at gap junctions. Here, we demonstrate that two proteins known to be associated with tight and adherens junctions, namely AF6 and MUPP1, are components of neuronal gap junctions in rodent brain. By immunofluorescence, AF6 and MUPP1 were co-localized with Cx36 in many brain areas. Co-immunoprecipitation and pull-down approaches revealed an association of Cx36 with AF6 and MUPP1, which required the C-terminus PDZ domain interaction motif of Cx36 for interaction with the single PDZ domain of AF6 and with the 10th PDZ domain of MUPP1. As AF6 is a target of the cAMP/Epac/Rap1 signalling pathway and MUPP1 is a scaffolding protein that interacts with CaMKII, the present results suggest that AF6 may be a target for cAMP/Epac/Rap1 signalling at electrical synapses, and that MUPP1 may contribute to anchoring CaMKII at these synapses. © 2011 The Authors. European Journal of Neuroscience © 2011 Federation of European Neuroscience Societies and Blackwell Publishing Ltd.

Toxicants target cell junctions in the testis: Insights from the indazole-carboxylic acid model

PubMed Central

Cheng, C Yan

2014-01-01

There are numerous types of junctions in the seminiferous epithelium which are integrated with, and critically dependent on the Sertoli cell cytoskeleton. These include the basal tight junctions between Sertoli cells that form the main component of the blood–testis barrier, the basal ectoplasmic specializations (basal ES) and basal tubulobulbar complexes (basal TBC) between Sertoli cells; as well as apical ES and apical TBC between Sertoli cells and the developing spermatids that orchestrate spermiogenesis and spermiation. These junctions, namely TJ, ES, and TBC interact with actin microfilament-based cytoskeleton, which together with the desmosomal junctions that interact with the intermediate filament-based cytoskeleton plus the highly polarized microtubule-based cytoskeleton are working in concert to move spermatocytes and spermatids between the basal and luminal aspect of the seminiferous epithelium. In short, these various junctions are structurally complexed with the actin- and microtubule-based cytoskeleton or intermediate filaments of the Sertoli cell. Studies have shown toxicants (e.g., cadmium, bisphenol A (BPA), perfluorooctanesulfonate (PFOS), phthalates, and glycerol), and some male contraceptives under development (e.g., adjudin, gamendazole), exert their effects, at least in part, by targeting cell junctions in the testis. The disruption of Sertoli–Sertoli cell and Sertoli–germ cell junctions, results in the loss of germ cells from the seminiferous epithelium. Adjudin, a potential male contraceptive under investigation in our laboratory, produces loss of spermatids from the seminiferous tubules through disruption of the Sertoli cell spermatid junctions and disruption of the Sertoli cell cytoskeleton. The molecular and structural changes associated with adjudin administration are described, to provide an example of the profile of changes caused by disturbance of Sertoli-germ cell and also Sertoli cell-cell junctions. PMID:26413399

Understanding the Conductance of Single-Molecule Junctions from First Principles

NASA Astrophysics Data System (ADS)

Quek, Su Ying

2008-03-01

Discovering the anatomy of single-molecule junctions, in order to exploit their transport behavior, poses fundamental challenges to nanoscience. First-principles calculations based on density-functional theory (DFT) can, together with experiment, provide detailed atomic-scale insights into the transport properties, and their relation to junction structure and electronic properties. Here, a DFT scattering state approach [1] is used to explore the single-molecule conductance of two prototypical junctions as a function of junction geometry, in the context of recent experiments. First, the computed conductance of 15 distinct benzene-diamine-Au junctions is compared to a large robust experimental data set [2]. The amine-gold bonding is shown to be highly selective, but flexible, resulting in a conductance that is insensitive to other details of the junction structure. The range of computed conductance corresponds well to the narrow distribution in experiment, although the average calculated conductance is approximately 7 times larger. This discrepancy is attributed to the absence of many-electron corrections in the DFT molecular orbital energies; a simple physically-motivated estimate for the self-energy corrections results in a conductance that is much closer to experiment [3]. Second, similar first-principles techniques are applied to a range of bipyridine-Au junctions. The extent to which Au-pyridine link bonding is affected by the constraints of forming bipyridine-Au junctions is investigated. In some contrast to the amine case, the computed conductance shows a strong sensitivity to the tilt of the bipyridine rings relative to the Au surfaces. Experiments probing the conductance of bipyridine-Au junctions are discussed in the context of these findings. [1] H. J. Choi et al, Phys Rev B, 76, 155420 (2007) [2] L. Venkataraman et al, Nano Lett 6, 458 (2006) [3] S. Y. Quek et al, Nano Lett. 7, 3477 (2007)

Optimal Normal Tissue Sparing in Craniospinal Axis Irradiation Using IMRT With Daily Intrafractionally Modulated Junction(s)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kusters, Johannes M.A.M.; Louwe, Rob J.W.; Kollenburg, Peter G.M. van

2011-12-01

Purpose: To develop a treatment technique for craniospinal irradiation using intensity-modulated radiotherapy (IMRT) with improved dose homogeneity at the field junction(s), increased target volume conformity, and minimized dose to the organs at risk (OARs). Methods and Materials: Five patients with high-risk medulloblastoma underwent CT simulation in supine position. For each patient, an IMRT plan with daily intrafractionally modulated junction(s) was generated, as well as a treatment plan based on conventional three-dimensional planning (3DCRT). A dose of 39.6 Gy in 22 daily fractions of 1.8 Gy was prescribed. Dose-volume parameters for target volumes and OARs were compared for the two techniques.more » Results: The maximum dose with IMRT was <107% in all patients. V{sub <95} and V{sub >107} were <1 cm{sup 3} for IMRT compared with 3-9 cm{sup 3} for the craniospinal and 26-43 cm{sup 3} for the spinal-spinal junction with 3DCRT. These observations corresponded with a lower homogeneity index and a higher conformity index for the spinal planning target volume with IMRT. IMRT provided considerable sparing of acute and late reacting tissues. V{sub 75} for the esophagus, gastroesophageal junction, and intestine was 81%, 81%, and 22% with 3DCRT versus 5%, 0%, and 1% with IMRT, respectively. V{sub 75} for the heart and thyroid was 42% and 32% vs. 0% with IMRT. Conclusion: IMRT with daily intrafractionally modulated junction results in a superior target coverage and junction homogeneity compared with 3DCRT. A significant dose reduction can be obtained for acute as well as late-reacting tissues.« less

Low Level Pro-inflammatory Cytokines Decrease Connexin36 Gap Junction Coupling in Mouse and Human Islets through Nitric Oxide-mediated Protein Kinase Cδ.

PubMed

Farnsworth, Nikki L; Walter, Rachelle L; Hemmati, Alireza; Westacott, Matthew J; Benninger, Richard K P

2016-02-12

Pro-inflammatory cytokines contribute to the decline in islet function during the development of diabetes. Cytokines can disrupt insulin secretion and calcium dynamics; however, the mechanisms underlying this are poorly understood. Connexin36 gap junctions coordinate glucose-induced calcium oscillations and pulsatile insulin secretion across the islet. Loss of gap junction coupling disrupts these dynamics, similar to that observed during the development of diabetes. This study investigates the mechanisms by which pro-inflammatory cytokines mediate gap junction coupling. Specifically, as cytokine-induced NO can activate PKCδ, we aimed to understand the role of PKCδ in modulating cytokine-induced changes in gap junction coupling. Isolated mouse and human islets were treated with varying levels of a cytokine mixture containing TNF-α, IL-1β, and IFN-γ. Islet dysfunction was measured by insulin secretion, calcium dynamics, and gap junction coupling. Modulators of PKCδ and NO were applied to determine their respective roles in modulating gap junction coupling. High levels of cytokines caused cell death and decreased insulin secretion. Low levels of cytokine treatment disrupted calcium dynamics and decreased gap junction coupling, in the absence of disruptions to insulin secretion. Decreases in gap junction coupling were dependent on NO-regulated PKCδ, and altered membrane organization of connexin36. This study defines several mechanisms underlying the disruption to gap junction coupling under conditions associated with the development of diabetes. These mechanisms will allow for greater understanding of islet dysfunction and suggest ways to ameliorate this dysfunction during the development of diabetes. © 2016 by The American Society for Biochemistry and Molecular Biology, Inc.

Heterotypic gap junctions at glutamatergic mixed synapses are abundant in goldfish brain

PubMed Central

Rash, John E.; Kamasawa, Naomi; Vanderpool, Kimberly G.; Yasumura, Thomas; O'Brien, John; Nannapaneni, Srikant; Pereda, Alberto E.; Nagy, James I.

2014-01-01

Gap junctions provide for direct intercellular electrical and metabolic coupling. The abundance of gap junctions at “large myelinated club ending” synapses on Mauthner cells of the teleost brain provided a convenient model to correlate anatomical and physiological properties of electrical synapses. There, presynaptic action potentials were found to evoke short-latency electrical “pre-potentials” immediately preceding their accompanying glutamate-induced depolarizations, making these the first unambiguously identified “mixed” (i.e., chemical plus electrical) synapses in the vertebrate CNS. We recently showed that gap junctions at these synapses exhibit asymmetric electrical resistance (i.e., electrical rectification), which we correlated with total molecular asymmetry of connexin composition in their apposing gap junction hemiplaques, with Cx35 restricted to axon terminal hemiplaques and Cx34.7 restricted to apposing Mauthner cell plasma membranes. We now show that similarly heterotypic neuronal gap junctions are abundant throughout goldfish brain, with labeling exclusively for Cx35 in presynaptic hemiplaques and exclusively for Cx34.7 in postsynaptic hemiplaques. Moreover, the vast majority of these asymmetric gap junctions occur at glutamatergic axon terminals. The widespread distribution of heterotypic gap junctions at glutamatergic mixed synapses throughout goldfish brain and spinal cord implies that pre- vs. postsynaptic asymmetry at electrical synapses evolved early in the chordate lineage. We propose that the advantages of the molecular and functional asymmetry of connexins at electrical synapses that are so prominently expressed in the teleost CNS are unlikely to have been abandoned in higher vertebrates. However, to create asymmetric coupling in mammals, where most gap junctions are composed of Cx36 on both sides, would require some other mechanism, such as differential phosphorylation of connexins on opposite sides of the same gap junction or on asymmetric differences in the complement of their scaffolding and regulatory proteins. PMID:25451276

Two classes of gap junction channels mediate soma-germline interactions essential for germline proliferation and gametogenesis in Caenorhabditis elegans.

PubMed

Starich, Todd A; Hall, David H; Greenstein, David

2014-11-01

In all animals examined, somatic cells of the gonad control multiple biological processes essential for germline development. Gap junction channels, composed of connexins in vertebrates and innexins in invertebrates, permit direct intercellular communication between cells and frequently form between somatic gonadal cells and germ cells. Gap junctions comprise hexameric hemichannels in apposing cells that dock to form channels for the exchange of small molecules. Here we report essential roles for two classes of gap junction channels, composed of five innexin proteins, in supporting the proliferation of germline stem cells and gametogenesis in the nematode Caenorhabditis elegans. Transmission electron microscopy of freeze-fracture replicas and fluorescence microscopy show that gap junctions between somatic cells and germ cells are more extensive than previously appreciated and are found throughout the gonad. One class of gap junctions, composed of INX-8 and INX-9 in the soma and INX-14 and INX-21 in the germ line, is required for the proliferation and differentiation of germline stem cells. Genetic epistasis experiments establish a role for these gap junction channels in germline proliferation independent of the glp-1/Notch pathway. A second class of gap junctions, composed of somatic INX-8 and INX-9 and germline INX-14 and INX-22, is required for the negative regulation of oocyte meiotic maturation. Rescue of gap junction channel formation in the stem cell niche rescues germline proliferation and uncovers a later channel requirement for embryonic viability. This analysis reveals gap junctions as a central organizing feature of many soma-germline interactions in C. elegans. Copyright © 2014 by the Genetics Society of America.

Abundance of gap junctions at glutamatergic mixed synapses in adult Mosquitofish spinal cord neurons

PubMed Central

Serrano-Velez, Jose L.; Rodriguez-Alvarado, Melanie; Torres-Vazquez, Irma I.; Fraser, Scott E.; Yasumura, Thomas; Vanderpool, Kimberly G.; Rash, John E.; Rosa-Molinar, Eduardo

2014-01-01

“Dye-coupling”, whole-mount immunohistochemistry for gap junction channel protein connexin 35 (Cx35), and freeze-fracture replica immunogold labeling (FRIL) reveal an abundance of electrical synapses/gap junctions at glutamatergic mixed synapses in the 14th spinal segment that innervates the adult male gonopodium of Western Mosquitofish, Gambusia affinis (Mosquitofish). To study gap junctions’ role in fast motor behavior, we used a minimally-invasive neural-tract-tracing technique to introduce gap junction-permeant or -impermeant dyes into deep muscles controlling the gonopodium of the adult male Mosquitofish, a teleost fish that rapidly transfers (complete in <20 mS) spermatozeugmata into the female reproductive tract. Dye-coupling in the 14th spinal segment controlling the gonopodium reveals coupling between motor neurons and a commissural primary ascending interneuron (CoPA IN) and shows that the 14th segment has an extensive and elaborate dendritic arbor and more gap junctions than do other segments. Whole-mount immunohistochemistry for Cx35 results confirm dye-coupling and show it occurs via gap junctions. Finally, FRIL shows that gap junctions are at mixed synapses and reveals that >50 of the 62 gap junctions at mixed synapses are in the 14th spinal segment. Our results support and extend studies showing gap junctions at mixed synapses in spinal cord segments involved in control of genital reflexes in rodents, and they suggest a link between mixed synapses and fast motor behavior. The findings provide a basis for studies of specific roles of spinal neurons in the generation/regulation of sex-specific behavior and for studies of gap junctions’ role in regulating fast motor behavior. Finally, the CoPA IN provides a novel candidate neuron for future studies of gap junctions and neural control of fast motor behaviors. PMID:25018700

Distal gap junctions and active dendrites can tune network dynamics.

PubMed

Saraga, Fernanda; Ng, Leo; Skinner, Frances K

2006-03-01

Gap junctions allow direct electrical communication between CNS neurons. From theoretical and modeling studies, it is well known that although gap junctions can act to synchronize network output, they can also give rise to many other dynamic patterns including antiphase and other phase-locked states. The particular network pattern that arises depends on cellular, intrinsic properties that affect firing frequencies as well as the strength and location of the gap junctions. Interneurons or GABAergic neurons in hippocampus are diverse in their cellular characteristics and have been shown to have active dendrites. Furthermore, parvalbumin-positive GABAergic neurons, also known as basket cells, can contact one another via gap junctions on their distal dendrites. Using two-cell network models, we explore how distal electrical connections affect network output. We build multi-compartment models of hippocampal basket cells using NEURON and endow them with varying amounts of active dendrites. Two-cell networks of these model cells as well as reduced versions are explored. The relationship between intrinsic frequency and the level of active dendrites allows us to define three regions based on what sort of network dynamics occur with distal gap junction coupling. Weak coupling theory is used to predict the delineation of these regions as well as examination of phase response curves and distal dendritic polarization levels. We find that a nonmonotonic dependence of network dynamic characteristics (phase lags) on gap junction conductance occurs. This suggests that distal electrical coupling and active dendrite levels can control how sensitive network dynamics are to gap junction modulation. With the extended geometry, gap junctions located at more distal locations must have larger conductances for pure synchrony to occur. Furthermore, based on simulations with heterogeneous networks, it may be that one requires active dendrites if phase-locking is to occur in networks formed with distal gap junctions.

MYONEURAL JUNCTIONS OF TWO ULTRASTRUCTURALLY DISTINCT TYPES IN EARTHWORM BODY WALL MUSCLE

PubMed Central

Rosenbluth, Jack

1972-01-01

The longitudinal muscle of the earthworm body wall is innervated by nerve bundles containing axons of two types which form two corresponding types of myoneural junction with the muscle fibers Type I junctions resemble cholinergic neuromuscular junctions of vertebrate skeletal muscle and are characterized by three features: (a) The nerve terminals contain large numbers of spherical, clear, ∼500 A vesicles plus a small number of larger dense-cored vesicles (b) The junctional gap is relatively wide (∼900 A), and it contains a basement membrane-like material, (c) The postjunctional membrane, although not folded, displays prominent specializations on both its external and internal surfaces The cytoplasmic surface is covered by a dense matrix ∼200 A thick which appears to be the site of insertion of fine obliquely oriented cytoplasmic filaments The external surface exhibits rows of projections ∼200 A long whose bases consist of hexagonally arrayed granules seated in the outer dense layer of the plasma membrane The concentration of these hexagonally disposed elements corresponds to the estimated concentration of both receptor sites and acetylcholinesterase sites at cholinergic junctions elsewhere. Type II junctions resemble the adrenergic junctions in vertebrate smooth muscle and exhibit the following structural characteristics: (a) The nerve fibers contain predominantly dense-cored vesicles ∼1000 A in diameter (b) The junctional gap is relatively narrow (∼150 A) and contains no basement membrane-like material, (c) Postjunctional membrane specialization is minimal. It is proposed that the structural differences between the two types of myoneural junction reflect differences in the respective transmitters and corresponding differences in the mechanisms of transmitter action and/or inactivation. PMID:5044759

Interaction of Ddc1 and RPA with single-stranded/double-stranded DNA junctions in yeast whole cell extracts: Proteolytic degradation of the large subunit of replication protein A in ddc1Δ strains.

PubMed

Sukhanova, Maria V; D'Herin, Claudine; Boiteux, Serge; Lavrik, Olga I

2014-10-01

To characterize proteins that interact with single-stranded/double-stranded (ss/ds) DNA junctions in whole cell free extracts of Saccharomyces cerevisiae, we used [(32)P]-labeled photoreactive partial DNA duplexes containing a 3'-ss/ds-junction (3'-junction) or a 5'-ss/ds-junction (5'-junction). Identification of labeled proteins was achieved by MALDI-TOF mass spectrometry peptide mass fingerprinting and genetic analysis. In wild-type extract, one of the components of the Ddc1-Rad17-Mec3 complex, Ddc1, was found to be preferentially photocrosslinked at a 3'-junction. On the other hand, RPAp70, the large subunit of the replication protein A (RPA), was the predominant crosslinking product at a 5'-junction. Interestingly, ddc1Δ extracts did not display photocrosslinking of RPAp70 at a 5'-junction. The results show that RPAp70 crosslinked to DNA with a 5'-junction is subject to limited proteolysis in ddc1Δ extracts, whereas it is stable in WT, rad17Δ, mec3Δ and mec1Δ extracts. The degradation of the RPAp70-DNA adduct in ddc1Δ extract is strongly reduced in the presence of the proteasome inhibitor MG 132. We also addressed the question of the stability of free RPA, using anti-RPA antibodies. The results show that RPAp70 is also subject to proteolysis without photocrosslinking to DNA upon incubation in ddc1Δ extract. The data point to a novel property of Ddc1, modulating the turnover of DNA binding proteins such as RPAp70 by the proteasome. Copyright © 2014 Elsevier B.V. All rights reserved.

46 CFR 111.81-1 - Outlet boxes and junction boxes; general.

Code of Federal Regulations, 2010 CFR

2010-10-01

... fixture, wiring device, or similar item, including each separately installed connection and junction box... used. (d) As appropriate, each outlet-box or junction-box installation must meet the following...

Interplay of Bias-Driven Charging and the Vibrational Stark Effect in Molecular Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yajing; Zolotavin, Pavlo; Doak, Peter

We observe large, reversible, bias driven changes in the vibrational energies of PCBM based on simultaneous transport and surface-enhanced Raman spectroscopy (SERS) measurements on PCBM-gold junctions. A combination of linear and quadratic shifts in vibrational energies with voltage is analyzed and compared with similar measurements involving C-60-gold junctions. A theoretical model based on density functional theory (DFT) calculations suggests that both a vibrational Stark effect and bias-induced charging of the junction contribute to the shifts in vibrational energies. In the PCBM case, a linear vibrational Stark effect is observed due to the permanent electric dipole moment of PCBM. The vibrationalmore » Stark shifts shown here for PCBM junctions are comparable to or larger than the charging effects that dominate in C-60 junctions.« less

Fixed-Gap Tunnel Junction for Reading DNA Nucleotides

PubMed Central

2015-01-01

Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events. PMID:25380505

Interplay of Bias-Driven Charging and the Vibrational Stark Effect in Molecular Junctions

DOE PAGES

Li, Yajing; Zolotavin, Pavlo; Doak, Peter; ...

2016-01-27

We observe large, reversible, bias driven changes in the vibrational energies of PCBM based on simultaneous transport and surface-enhanced Raman spectroscopy (SERS) measurements on PCBM-gold junctions. A combination of linear and quadratic shifts in vibrational energies with voltage is analyzed and compared with similar measurements involving C-60-gold junctions. A theoretical model based on density functional theory (DFT) calculations suggests that both a vibrational Stark effect and bias-induced charging of the junction contribute to the shifts in vibrational energies. In the PCBM case, a linear vibrational Stark effect is observed due to the permanent electric dipole moment of PCBM. The vibrationalmore » Stark shifts shown here for PCBM junctions are comparable to or larger than the charging effects that dominate in C-60 junctions.« less

Regulation of neuronal axon specification by glia-neuron gap junctions in C. elegans.

PubMed

Meng, Lingfeng; Zhang, Albert; Jin, Yishi; Yan, Dong

2016-10-21

Axon specification is a critical step in neuronal development, and the function of glial cells in this process is not fully understood. Here, we show that C. elegans GLR glial cells regulate axon specification of their nearby GABAergic RME neurons through GLR-RME gap junctions. Disruption of GLR-RME gap junctions causes misaccumulation of axonal markers in non-axonal neurites of RME neurons and converts microtubules in those neurites to form an axon-like assembly. We further uncover that GLR-RME gap junctions regulate RME axon specification through activation of the CDK-5 pathway in a calcium-dependent manner, involving a calpain clp-4 . Therefore, our study reveals the function of glia-neuron gap junctions in neuronal axon specification and shows that calcium originated from glial cells can regulate neuronal intracellular pathways through gap junctions.

GdN nanoisland-based GaN tunnel junctions.

PubMed

Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

2013-06-12

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

Arp2/3 promotes junction formation and maintenance in the Caenorhabditis elegans intestine by regulating membrane association of apical proteins

PubMed Central

Bernadskaya, Yelena Y.; Patel, Falshruti B.; Hsu, Hsiao-Ting; Soto, Martha C.

2011-01-01

It has been proposed that Arp2/3, which promotes nucleation of branched actin, is needed for epithelial junction initiation but is less important as junctions mature. We focus here on how Arp2/3 contributes to the Caenorhabditis elegans intestinal epithelium and find important roles for Arp2/3 in the maturation and maintenance of junctions in embryos and adults. Electron microscope studies show that embryos depleted of Arp2/3 form apical actin-rich microvilli and electron-dense apical junctions. However, whereas apical/basal polarity initiates, apical maturation is defective, including decreased apical F-actin enrichment, aberrant lumen morphology, and reduced accumulation of some apical junctional proteins, including DLG-1. Depletion of Arp2/3 in adult animals leads to similar intestinal defects. The DLG-1/AJM-1 apical junction proteins, and the ezrin–radixin–moesin homologue ERM-1, a protein that connects F-actin to membranes, are required along with Arp2/3 for apical F-actin enrichment in embryos, whereas cadherin junction proteins are not. Arp2/3 affects the subcellular distribution of DLG-1 and ERM-1. Loss of Arp2/3 shifts both ERM-1 and DLG-1 from pellet fractions to supernatant fractions, suggesting a role for Arp2/3 in the distribution of membrane-associated proteins. Thus, Arp2/3 is required as junctions mature to maintain apical proteins associated with the correct membranes. PMID:21697505

Role of gap junction intercellular communication in testicular leydig cell apoptosis induced by oxaliplatin via the mitochondrial pathway.

PubMed

Tong, Xuhui; Han, Xi; Yu, Binbin; Yu, Meiling; Jiang, Guojun; Ji, Jie; Dong, Shuying

2015-01-01

Platinum agents are widely used in the chemotherapy of testicular cancer. However, adverse reactions and resistance to such agents have limited their application in antineoplastic treatment. The aim of the present study was to determine the role of gap junction intercellular communication (GJIC) composed of Cx43 on oxaliplatin‑induced survival/apoptosis in mouse leydig normal and cancer cells using MTT, Annexin V/PI double staining assays and western blot analysis. The results showed that GJIC exerted opposite effects on the mouse leydig cancer (I-10) and normal (TM3) cell apoptosis induced by oxaliplatin. In leydig cancer cells, survival of cells exposed to oxaliplatin was substantially reduced when gap junctions formed as compared to no gap junctions. Pharmacological inhibition of gap junctions by oleamide and 18-α-glycyrrhetinic acid resulted in enhanced survival/decreased apoptosis while enhancement of gap junctions by retinoic acid led to decreased survival/increased apoptosis. These effects occurred only in high‑density cultures (gap junction formed), while the pharmacological modulations had no effects when there was no opportunity for gap junction formation. Notably, GJIC played an opposite (protective) role in normal leydig cells survival/apoptosis following exposure to oxaliplatin. Furthermore, this converse oxaliplatin‑inducing apoptosis exerted through the functional gap junction was correlated with the mitochondrial pathway‑related protein Bcl-2/Bax and caspase‑3/9. These results suggested that in testicular leydig normal/cancer cells, GJIC plays an opposite role in oxaliplatin‑induced apoptosis via the mitochondrial pathway.

Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-06-01

We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. Wemore » found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.« less

Drivers' Visual Search Behavior Toward Vulnerable Road Users at Junctions as a Function of Cycling Experience.

PubMed

Robbins, Chloe Jade; Chapman, Peter

2018-06-01

The current study investigated the behavior and visual attention of two groups of drivers with differing pedal cycling experience (pedal cyclists and nonpedal cyclists) towards vulnerable road users at junctions in a driving simulator. Pedal cyclists and motorcyclists are involved in a disproportionate number of crashes given the distance they travel, with a high proportion of these crashes occurring at junctions. Many studies have found that car drivers who also hold a motorcycle license have increased awareness towards motorcycles. The task involved approaching a T-junction and turning right when it was deemed to be safe. In Study 1, the junction was controlled by a give way sign, and in Study 2, the junction was controlled by a stop sign. Each T-junction contained a target vehicle (car, motorcycle, or pedal cycle), approaching from a near, medium, or far distance from the junction. Participants did not look at pedal cycles approaching from a far distance for as long as they looked at approaching motorcycles and cars, despite all vehicles travelling at identical speeds. No differences were found between pedal cyclists and nonpedal cyclists on any visual attention measures, indicating that pedal cycling experience was not associated with differences in drivers' attention toward pedal cycles. Findings have implications for road safety, demonstrating subtle differences in drivers' everyday visual attention toward differing vehicle types. This research has the potential to inform the development of in-car technical assistive systems, improving the safety of vulnerable road users at junctions.

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

DOEpatents

Yang, Liyou; Chen, Liangfan

1998-03-24

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Modeling and Simulation of a Dual-Junction CIGS Solar Cell Using Silvaco ATLAS

DTIC Science & Technology

2012-12-01

junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell...Silvaco ATLASTM model of a single CIGS cell was created by utilizing actual solar cell parameters (such as layer thicknesses, gallium ratio, doping...THIS PAGE INTENTIONALLY LEFT BLANK v ABSTRACT The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic

Gap Junctions Contribute to the Regulation of Walking-Like Activity in the Adult Mudpuppy (Necturus Maculatus).

PubMed

Lavrov, Igor; Fox, Lyle; Shen, Jun; Han, Yingchun; Cheng, Jianguo

2016-01-01

Although gap junctions are widely expressed in the developing central nervous system, the role of electrical coupling of neurons and glial cells via gap junctions in the spinal cord in adults is largely unknown. We investigated whether gap junctions are expressed in the mature spinal cord of the mudpuppy and tested the effects of applying gap junction blocker on the walking-like activity induced by NMDA or glutamate in an in vitro mudpuppy preparation. We found that glial and neural cells in the mudpuppy spinal cord expressed different types of connexins that include connexin 32 (Cx32), connexin 36 (Cx36), connexin 37 (Cx37), and connexin 43 (Cx43). Application of a battery of gap junction blockers from three different structural classes (carbenexolone, flufenamic acid, and long chain alcohols) substantially and consistently altered the locomotor-like activity in a dose-dependent manner. In contrast, these blockers did not significantly change the amplitude of the dorsal root reflex, indicating that gap junction blockers did not inhibit neuronal excitability nonselectively in the spinal cord. Taken together, these results suggest that gap junctions play a significant modulatory role in the spinal neural networks responsible for the generation of walking-like activity in the adult mudpuppy.

Ultrastructural demonstration of Cx43 gap junctions in induced pluripotent stem cells from human cord blood.

PubMed

Beckmann, Anja; Schubert, Madline; Hainz, Nadine; Haase, Alexandra; Martin, Ulrich; Tschernig, Thomas; Meier, Carola

2016-11-01

Gap junction proteins are essential for direct intercellular communication but also influence cellular differentiation and migration. The expression of various connexin gap junction proteins has been demonstrated in embryonic stem cells, with Cx43 being the most intensely studied. As Cx43 is the most prominent gap junction protein in the heart, cardiomyocyte-differentiated stem cells have been studied intensely. To date, however, little is known about the expression and the subcellular distribution of Cx43 in undifferentiated stem cells or about the structural arrangement of channels. We, therefore, here investigate expression of Cx43 in undifferentiated human cord-blood-derived induced pluripotent stem cells (hCBiPS2). For this purpose, we carried out quantitative real-time PCR and immunohistochemistry. For analysis of Cx43 ultrastructure and protein assembly, we performed freeze-fracture replica immunogold labeling (FRIL). Cx43 expression was detected at mRNA and protein level in hCBIPS2 cells. For the first time, ultrastructural data are presented on gap junction morphology in induced pluripotent stem (iPS) cells from cord blood: Our FRIL and electron microscopical analysis revealed the occurrence of gap junction plaques in undifferentiated iPS cells. In addition, these gap junctions were shown to contain the gap junction protein Cx43.

Ultrastructure and regulation of lateralized connexin43 in the failing heart.

PubMed

Hesketh, Geoffrey G; Shah, Manish H; Halperin, Victoria L; Cooke, Carol A; Akar, Fadi G; Yen, Timothy E; Kass, David A; Machamer, Carolyn E; Van Eyk, Jennifer E; Tomaselli, Gordon F

2010-04-02

Gap junctions mediate cell-to-cell electric coupling of cardiomyocytes. The primary gap junction protein in the working myocardium, connexin43 (Cx43), exhibits increased localization at the lateral membranes of cardiomyocytes in a variety of heart diseases, although the precise location and function of this population is unknown. To define the subcellular location of lateralized gap junctions at the light and electron microscopic level, and further characterize the biochemical regulation of gap junction turnover. By electron microscopy, we characterized gap junctions formed between cardiomyocyte lateral membranes in failing canine ventricular myocardium. These gap junctions were varied in structure and appeared to be extensively internalizing. Internalized gap junctions were incorporated into multilamellar membrane structures, with features characteristic of autophagosomes. Intracellular Cx43 extensively colocalized with the autophagosome marker GFP-LC3 when both proteins were exogenously expressed in HeLa cells, and endogenous Cx43 colocalized with GFP-LC3 in neonatal rat ventricular myocytes. Furthermore, a distinct phosphorylated form of Cx43, as well as the autophagosome-targeted form of LC3 (microtubule-associated protein light chain 3) targeted to lipid rafts in cardiac tissue, and both were increased in heart failure. Our data demonstrate a previously unrecognized pathway of gap junction internalization and degradation in the heart and identify a cellular pathway with potential therapeutic implications.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

NASA Astrophysics Data System (ADS)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

Selective binding of meiosis-specific yeast Hop1 protein to the holliday junctions distorts the DNA structure and its implications for junction migration and resolution.

PubMed

Tripathi, Pankaj; Anuradha, S; Ghosal, Gargi; Muniyappa, K

2006-12-08

Saccharomyces cerevisiae HOP1, which encodes a component of synaptonemal complex (SC), plays an important role in both gene conversion and crossing over between homologs, as well as enforces meiotic recombination checkpoint control over the progression of recombination intermediates. In hop1Delta mutants, meiosis-specific double-strand breaks (DSBs) are reduced to 10% of the wild-type level, and at aberrantly late times, these DSBs are processed into inter-sister recombination intermediates. However, the underlying mechanism by which Hop1 protein regulates these nuclear events remains obscure. Here we show that Hop1 protein interacts selectively with the Holliday junction, changes its global conformation and blocks the dissolution of the junction by a RecQ helicase. The Holliday junction-Hop1 protein complexes are significantly more stable at higher ionic strengths and molar excess of unlabeled competitor DNA than complexes containing other recombination intermediates. Structural analysis of the Holliday junction using 2-aminopurine fluorescence emission, DNase I footprinting and KMnO4 probing provide compelling evidence that Hop1 protein binding induces significant distortion at the center of the Holliday junction. We propose that Hop1 protein might coordinate the physical monitoring of meiotic recombination intermediates with the process of branch migration of Holliday junction.

Ileocolic junction resection in dogs and cats: 18 cases.

PubMed

Fernandez, Yordan; Seth, Mayank; Murgia, Daniela; Puig, Jordi

2017-12-01

There is limited veterinary literature about dogs or cats with ileocolic junction resection and its long-term follow-up. To evaluate the long-term outcome in a cohort of dogs and cats that underwent resection of the ileocolic junction without extensive (≥50%) small or large bowel resection. Medical records of dogs and cats that had the ileocolic junction resected were reviewed. Follow-up information was obtained either by telephone interview or e-mail correspondence with the referring veterinary surgeons. Nine dogs and nine cats were included. The most common cause of ileocolic junction resection was intussusception in dogs (5/9) and neoplasia in cats (6/9). Two dogs with ileocolic junction lymphoma died postoperatively. Only 2 of 15 animals, for which long-term follow-up information was available, had soft stools. However, three dogs with suspected chronic enteropathy required long-term treatment with hypoallergenic diets alone or in combination with medical treatment to avoid the development of diarrhoea. Four of 6 cats with ileocolic junction neoplasia were euthanised as a consequence of progressive disease. Dogs and cats undergoing ileocolic junction resection and surviving the perioperative period may have a good long-term outcome with mild or absent clinical signs but long-term medical management may be required.

Characterization of buried metal-molecule-metal junctions using Fourier transform infrared microspectroscopy

NASA Astrophysics Data System (ADS)

Babayco, Christopher B.; Land, Donald P.; Parikh, Atul N.; Kiehl, Richard A.

2014-09-01

We have devised an infrared spectromicroscopy based experimental configuration to enable structural characterization of buried molecular junctions. Our design utilizes a small mercury drop at the focal point of an infrared microscope to act as a mirror in studying metal-molecule-metal (MmM) junctions. An organic molecular monolayer is formed either directly on the mercury drop or on a thin, infrared (IR) semi-transparent layer of Au deposited onto an IR transparent, undoped silicon substrate. Following the formation of the monolayer, films on either metal can be examined independently using specular reflection spectroscopy. Furthermore, by bringing together the two monolayers, a buried molecular bilayer within the MmM junction can be characterized. Independent examination of each half of the junction prior to junction formation also allows probing any structural and/or conformational changes that occur as a result of forming the bilayer. Because our approach allows assembling and disassembling microscopic junctions by forming and withdrawing Hg drops onto the monolayer covered metal, spatial mapping of junctions can be performed simply by translating the location of the derivatized silicon wafer. Finally, the applicability of this technique for the longer-term studies of changes in molecular structure in the presence of electrical bias is discussed.

Observing Holliday junction branch migration one step at a time

NASA Astrophysics Data System (ADS)

Ha, Taekjip

2004-03-01

During genetic recombination, two homologous DNA molecules undergo strand exchange to form a four-way DNA (Holliday) junction and the recognition and processing of this species by branch migration and junction resolving enzymes determine the outcome. We have used single molecule fluorescence techniques to study two intrinsic structural dynamics of the Holliday junction, stacking conformer transitions and spontaneous branch migration. Our studies show that the dynamics of branch migration, resolved with one base pair resolution, is determined by the stability of conformers which in turn depends on the local DNA sequences. Therefore, the energy landscape of Holliday junction branch migation is not uniform, but is rugged.

Heat currents in electronic junctions driven by telegraph noise

NASA Astrophysics Data System (ADS)

Entin-Wohlman, O.; Chowdhury, D.; Aharony, A.; Dattagupta, S.

2017-11-01

The energy and charge fluxes carried by electrons in a two-terminal junction subjected to a random telegraph noise, produced by a single electronic defect, are analyzed. The telegraph processes are imitated by the action of a stochastic electric field that acts on the electrons in the junction. Upon averaging over all random events of the telegraph process, it is found that this electric field supplies, on the average, energy to the electronic reservoirs, which is distributed unequally between them: the stronger is the coupling of the reservoir with the junction, the more energy it gains. Thus the noisy environment can lead to a temperature gradient across an unbiased junction.

A history of gap junction structure: hexagonal arrays to atomic resolution.

PubMed

Grosely, Rosslyn; Sorgen, Paul L

2013-02-01

Gap junctions are specialized membrane structures that provide an intercellular pathway for the propagation and/or amplification of signaling cascades responsible for impulse propagation, cell growth, and development. Prior to the identification of the proteins that comprise gap junctions, elucidation of channel structure began with initial observations of a hexagonal nexus connecting apposed cellular membranes. Concomitant with technological advancements spanning over 50 years, atomic resolution structures are now available detailing channel architecture and the cytoplasmic domains that have helped to define mechanisms governing the regulation of gap junctions. Highlighted in this review are the seminal structural studies that have led to our current understanding of gap junction biology.

On simulation of local fluxes in molecular junctions

NASA Astrophysics Data System (ADS)

Cabra, Gabriel; Jensen, Anders; Galperin, Michael

2018-05-01

We present a pedagogical review of the current density simulation in molecular junction models indicating its advantages and deficiencies in analysis of local junction transport characteristics. In particular, we argue that current density is a universal tool which provides more information than traditionally simulated bond currents, especially when discussing inelastic processes. However, current density simulations are sensitive to the choice of basis and electronic structure method. We note that while discussing the local current conservation in junctions, one has to account for the source term caused by the open character of the system and intra-molecular interactions. Our considerations are illustrated with numerical simulations of a benzenedithiol molecular junction.

An investigation of deformation and fluid flow at subduction zones using newly developed instrumentation and finite element modeling

NASA Astrophysics Data System (ADS)

Labonte, Alison Louise

Detecting seafloor deformation events in the offshore convergent margin environment is of particular importance considering the significant seismic hazard at subduction zones. Efforts to gain insight into the earthquake cycle have been made at the Cascadia and Costa Rica subduction margins through recent expansions of onshore GPS and seismic networks. While these studies have given scientists the ability to quantify and locate slip events in the seismogenic zone, there is little technology available for adequately measuring offshore aseismic slip. This dissertation introduces an improved flow meter for detecting seismic and aseismic deformation in submarine environments. The value of such hydrologic measurements for quantifying the geodetics at offshore margins is verified through a finite element modeling (FEM) study in which the character of deformation in the shallow subduction zone is determined from previously recorded hydrologic events at the Costa Rica Pacific margin. Accurately sensing aseismic events is one key to determining the stress state in subduction zones as these slow-slip events act to load or unload the seismogenic zone during the interseismic period. One method for detecting seismic and aseismic strain events is to monitor the hydrogeologic response to strain events using fluid flow meters. Previous instrumentation, the Chemical Aqueous Transport (CAT) meter which measures flow rates through the sediment-water interface, can detect transient events at very low flowrates, down to 0.0001 m/yr. The CAT meter performs well in low flow rate environments and can capture gradual changes in flow rate, as might be expected during ultra slow slip events. However, it cannot accurately quantify high flow rates through fractures and conduits, nor does it have the temporal resolution and accuracy required for detecting transient flow events associated with rapid deformation. The Optical Tracer Injection System (OTIS) developed for this purpose is an electronic flow meter that can measure flow rates of 0.1 to >500 m/yr at a temporal resolution of 30 minutes to 0.5 minutes, respectively. Test deployments of the OTIS at cold seeps in the transpressional Monterey Bay demonstrated the OTIS functionality over this range of flow environments. Although no deformation events were detected during these test deployments, the OTIS's temporally accurate measurements at the vigorously flowing Monterey Bay cold seep rendered valuable insight into the plumbing of the seep system. In addition to the capability to detect transient flow events, a primary functional requirement of the OTIS was the ability to communicate and transfer data for long-term real-time monitoring deployments. Real-time data transfer from the OTIS to the desktop was successful during a test deployment of the Nootka Observatory, an acoustically-linked moored-buoy system. A small array of CAT meters was also deployed at the Nootka transform-Cascadia subduction zone triple junction. Four anomalous flow rate events were observed across all four meters during the yearlong deployment. Although the records have low temporal accuracy, a preliminary explanation for the regional changes in flow rate is made through comparison between flow rate records and seismic records. The flow events are thought to be a result of a tectonic deformation event, possibly with an aseismic component. Further constraints are not feasible given the unknown structure of faulting near the triple junction. In a final proof of concept study, I find that use these hydrologic instruments, which capture unique aseismic flow rate patterns, is a valuable method for extracting information about deformation events on the decollement in the offshore subduction zone margin. Transient flow events observed in the frontal prism during a 1999--2000 deployment of CAT meters on the Costa Rica Pacific margin suggest episodic slow-slip deformation events may be occurring in the shallow subduction zone. The FEM study to infer the character of the hypothetical deformation event driving flow transients verify that indeed, a shallow slow-slip event can reproduce the unique flow rate patterns observed. Along (trench) strike variability in the rupture initiation location, and bidirectional propagation, is one way to explain the opposite sign of flow rate transients observed at different along-strike distances. The larger question stimulated by this dissertation project, is: What are the controls on fault mechanics in offshore subduction zone environments? It appears the shallow subduction zone plate interface doesn't behave solely in response to frictional properties of the sediment lining the decollement. Shallow episodic slip at the Costa Rica Pacific margin and further north off Nicaragua, where a slow earthquake broke through the shallow 'stable-sliding' zone and resulted in a tsunami, are potentially conceived through the normally faulted incoming basement topography. Scientists should seek to map out the controls of faulting mechanics, whatever they may be, at all temporal and spatial scales in order to understand these dynamic subduction zone systems. The quest to understanding these controls, in part, requires the characterization of aseismic and seismic strain occurring over time and space. The techniques presented in this dissertation advance scientists' capability for quantifying such strains. With the new instrumentation presented here, long-term real-time observatory networks on the seafloor, and modeling for characterization of deformation events, the pieces of the subduction zone earthquake cycle puzzle may start to come together.

Antenna feed system for receiving circular polarization and transmitting linear polarization

NASA Technical Reports Server (NTRS)

Seidel, B. L.; Bathker, D. A. (Inventor)

1979-01-01

An invention is described which provides for receiving a circularly polarized signal from an antenna feed connected to orthogonally spaced antenna elements. It also provides for transmitting a linearly polarized signal through the same feed without switches, and without suffering a 3 dB polarization mismatch loss, using an arrangement of hybrid junctions. The arrangement is comprised of two dividing hybrid junctions, each connected to a different pair of antenna elements and a summing hybrid junction. In one version, a receiver is connected to the summing hybrid junction directly. A diplexer is used to connect a transmitter to only one pair of antenna elements. In another version, designated left and right circularly polarized (LCP and RCP) transmitters are connected to the summing hybrid junction by separate diplexers, and separate LCP and RCP sensitive receivers are connected to the diplexers in order to transmit linearly polarized signals using all four antenna elements while receiving circularly polarized signals as before. An orthomode junction and horn antenna may replace the two dividing hybrid junctions and antenna feed.

Junction size dependence of ferroelectric properties in e-beam patterned BaTiO{sub 3} ferroelectric tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, A. V.; Gupta, A.; Althammer, M.

We investigate the switching characteristics in BaTiO{sub 3}-based ferroelectric tunnel junctions patterned in a capacitive geometry with circular Ru top electrode with diameters ranging from ∼430 to 2300 nm. Two different patterning schemes, viz., lift-off and ion-milling, have been employed to examine the variations in the ferroelectric polarization, switching, and tunnel electro-resistance resulting from differences in the pattering processes. The values of polarization switching field are measured and compared for junctions of different diameter in the samples fabricated using both patterning schemes. We do not find any specific dependence of polarization switching bias on the size of junctions in both samplemore » stacks. The junctions in the ion-milled sample show up to three orders of resistance change by polarization switching and the polarization retention is found to improve with increasing junction diameter. However, similar switching is absent in the lift-off sample, highlighting the effect of patterning scheme on the polarization retention.« less

Live-cell imaging of ER-PM contact architecture by a novel TIRFM approach reveals extension of junctions in response to store-operated Ca2+-entry.

PubMed

Poteser, Michael; Leitinger, Gerd; Pritz, Elisabeth; Platzer, Dieter; Frischauf, Irene; Romanin, Christoph; Groschner, Klaus

2016-10-19

Nanometer-spaced appositions between endoplasmic reticulum and plasma membrane (ER-PM junctions) stabilized by membrane-joining protein complexes are critically involved in cellular Ca 2+ -handling and lipid trafficking. ER-PM junctional architecture and plasticity associated with inter-membrane communication are as yet barely understood. Here, we introduce a method to precisely characterize ER-PM junction morphology and dynamics with high temporal resolution and minimal disturbance of junctional intermembrane communication. We show that expression of soluble cytosolic fluorophores in combination with TIRFM enables to delineate ER and PM distance in the range of 10-150 nm. Live-cell imaging of sub-plasmalemmal structures in RBL-2H3 mast cells by this method, designated as fluorescence density mapping (FDM), revealed profound dynamics of ER-PM contact sites in response to store-depletion. We report the existence of a Ca 2+ -dependent process that expands the junctional ER to enlarge its contact surface with the PM, thereby promoting and stabilizing STIM1-Orai1 competent ER-PM junctions.

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

NASA Technical Reports Server (NTRS)

Lichtenberger, A. W.; Feldman, M. J.; Mattauch, R. J.; Cukauskas, E. J.

1989-01-01

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Density matrix renormalization group study of Y-junction spin systems

NASA Astrophysics Data System (ADS)

Guo, Haihui

Junction systems are important to understand both from the fundamental and the practical point of view, as they are essential components in existing and future electronic and spintronic devices. With the continuous advance of technology, device size will eventual reach the atomic scale. Some of the most interesting and useful junction systems will be strongly correlated. We chose the Density Matrix Renormalization Group method to study two types of Y-junction systems, the Y and YDelta junctions, on strongly correlated spin chains. With new ideas coming from the quantum information field, we have made a very efficient. Y-junction DMRG algorithm, which improves the overall CUB cost from O(m6) to O(m4), where m is the number of states kept per block. We studied the ground state properties, the correlation length, and investigated the degeneracy problem on the Y and YDelta junctions. For the excited states, we researched the existence of magnon bound states for various conditions, and have shown that the bound state exists when the central coupling constant is small.

Fixed Junction Light Emitting Electrochemical Cells based on Polymerizable Ionic Liquids

NASA Astrophysics Data System (ADS)

Brown, Erin; Limanek, Austin; Bauman, James; Leger, Janelle

Organic photovoltaic (OPV) devices are of interest due to ease of fabrication, which increases their cost-effectiveness. OPV devices based on fixed-junction light emitting electrochemical cells (LECs) in particular have shown promising results. LECs are composed of a layer of polymer semiconductor blended with a salt sandwiched between two electrodes. As a forward bias is applied, the ions within the polymer separate, migrate to the electrodes, and enable electrochemical doping, thereby creating a p-n junction analog. In a fixed junction device, the ions are immobilized after the desired distribution has been established, allowing for operation under reverse bias conditions. Fixed junctions can be established using various techniques, including chemically by mixing polymerizable salts that will bond to the polymer under a forward bias. Previously we have demonstrated the use of the polymerizable ionic liquid allyltrioctylammonium allysulfonate (ATOAAS) as an effective means of creating a chemically fixed junction in an LEC. Here we present the application of this approach to the creation of photovoltaic devices. Devices demonstrate higher open circuit voltages, faster charging, and an overall improved device performance over previous chemically-fixed junction PV devices.

Proteomic analysis of laser capture microscopy purified myotendinous junction regions from muscle sections

PubMed Central

2014-01-01

The myotendinous junction is a specialized structure of the muscle fibre enriched in mechanosensing complexes, including costameric proteins and core elements of the z-disc. Here, laser capture microdissection was applied to purify membrane regions from the myotendinous junctions of mouse skeletal muscles, which were then processed for proteomic analysis. Sarcolemma sections from the longitudinal axis of the muscle fibre were used as control for the specificity of the junctional preparation. Gene ontology term analysis of the combined lists indicated a statistically significant enrichment in membrane-associated proteins. The myotendinous junction preparation contained previously uncharacterized proteins, a number of z-disc costameric ligands (e.g., actinins, capZ, αB cristallin, filamin C, cypher, calsarcin, desmin, FHL1, telethonin, nebulin, titin and an enigma-like protein) and other proposed players of sarcomeric stretch sensing and signalling, such as myotilin and the three myomesin homologs. A subset were confirmed by immunofluorescence analysis as enriched at the myotendinous junction, suggesting that laser capture microdissection from muscle sections is a valid approach to identify novel myotendinous junction players potentially involved in mechanotransduction pathways. PMID:25071420

IJS: An Intelligent Junction Selection Based Routing Protocol for VANET to Support ITS Services.

PubMed

Bhoi, Sourav Kumar; Khilar, Pabitra Mohan

2014-01-01

Selecting junctions intelligently for data transmission provides better intelligent transportation system (ITS) services. The main problem in vehicular communication is high disturbances of link connectivity due to mobility and less density of vehicles. If link conditions are predicted earlier, then there is a less chance of performance degradation. In this paper, an intelligent junction selection based routing protocol (IJS) is proposed to transmit the data in a quickest path, in which the vehicles are mostly connected and have less link connectivity problem. In this protocol, a helping vehicle is set at every junction to control the communication by predicting link failures or network gaps in a route. Helping vehicle at the junction produces a score for every neighboring junction to forward the data to the destination by considering the current traffic information and selects that junction which has minimum score. IJS protocol is implemented and compared with GyTAR, A-STAR, and GSR routing protocols. Simulation results show that IJS performs better in terms of average end-to-end delay, network gap encounter, and number of hops.

IJS: An Intelligent Junction Selection Based Routing Protocol for VANET to Support ITS Services

PubMed Central

Khilar, Pabitra Mohan

2014-01-01

Selecting junctions intelligently for data transmission provides better intelligent transportation system (ITS) services. The main problem in vehicular communication is high disturbances of link connectivity due to mobility and less density of vehicles. If link conditions are predicted earlier, then there is a less chance of performance degradation. In this paper, an intelligent junction selection based routing protocol (IJS) is proposed to transmit the data in a quickest path, in which the vehicles are mostly connected and have less link connectivity problem. In this protocol, a helping vehicle is set at every junction to control the communication by predicting link failures or network gaps in a route. Helping vehicle at the junction produces a score for every neighboring junction to forward the data to the destination by considering the current traffic information and selects that junction which has minimum score. IJS protocol is implemented and compared with GyTAR, A-STAR, and GSR routing protocols. Simulation results show that IJS performs better in terms of average end-to-end delay, network gap encounter, and number of hops. PMID:27433485

Single Molecule Junctions: A Laboratory for Chemistry, Mechanics and Bond Rupture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hybertsen M. S.

Simultaneous measurement [1] of junction conductance and sustained force in single molecule junctions bridging metal electrodes provides a powerful tool in the quantitative study of the character of molecule-metal bonds. In this talk I will discuss three topics. First, I will describe chemical trends in link bond strength based on experiments and Density Functional Theory based calculations. Second, I will focus on the specific case of pyridine-linked junctions. Bond rupture from the high conductance junction structure shows a requires a force that exceeds the rupture force of gold point contacts and clearly indicates the role of additional forces, beyond themore » specific N-Au donor acceptor bond. DFT-D2 calculations with empirical addition of dispersion interactions illustrates the interplay between the donor-acceptor bonding and the non-specific van der Waals interactions between the pyridine rings and Au asperities. Third, I will describe recent efforts to characterize the diversity of junction structures realized in break-junction experiments with suitable models for the potential surfaces that are observed. [1] Venkataraman Group, Columbia University.« less

Bi-directional gap junction-mediated soma-germline communication is essential for spermatogenesis.

PubMed

Smendziuk, Christopher M; Messenberg, Anat; Vogl, A Wayne; Tanentzapf, Guy

2015-08-01

Soma-germline interactions play conserved essential roles in regulating cell proliferation, differentiation, patterning and homeostasis in the gonad. In the Drosophila testis, secreted signalling molecules of the JAK-STAT, Hedgehog, BMP and EGF pathways are used to mediate soma-germline communication. Here, we demonstrate that gap junctions may also mediate direct, bi-directional signalling between the soma and germ line. When gap junctions between the soma and germ line are disrupted, germline differentiation is blocked and germline stem cells are not maintained. In the soma, gap junctions are required to regulate proliferation and differentiation. Localization and RNAi-mediated knockdown studies reveal that gap junctions in the fly testis are heterotypic channels containing Zpg (Inx4) and Inx2 on the germ line and the soma side, respectively. Overall, our results show that bi-directional gap junction-mediated signalling is essential to coordinate the soma and germ line to ensure proper spermatogenesis in Drosophila. Moreover, we show that stem cell maintenance and differentiation in the testis are directed by gap junction-derived cues. © 2015. Published by The Company of Biologists Ltd.

Kinase programs spatiotemporally regulate gap junction assembly and disassembly: effects on wound repair

PubMed Central

Solan, Joell L.; Lampe, Paul D.

2016-01-01

Gap junctions are highly ordered plasma membrane domains that are constantly assembled, remodeled and turned over due to the short half-life of connexins, the integral membrane proteins that form gap junctions. Connexin 43 (Cx43), by far the most widely expressed connexin, is phosphorylated at multiple serine residues in the cytoplasmic, C-terminal region allowing for exquisite cellular control over gap junctional communication. This is evident during epidermal wounding where spatiotemporal changes in connexin expression occur as cells are instructed whether to die, proliferate or migrate to promote repair. Early gap junctional communication is required for initiation of keratinocyte migration, but accelerated Cx43 turnover is also critical for proper wound healing at later stages. These events are controlled via a "kinase program" where sequential phosphorylation of Cx43 leads to reductions in Cx43’s half-life and significant depletion of gap junctions from the plasma membrane within several hours. The complex regulation of gap junction assembly and turnover affords several steps where intervention might speed wound healing. PMID:26706150

Kinase programs spatiotemporally regulate gap junction assembly and disassembly: Effects on wound repair.

PubMed

Solan, Joell L; Lampe, Paul D

2016-02-01

Gap junctions are highly ordered plasma membrane domains that are constantly assembled, remodeled and turned over due to the short half-life of connexins, the integral membrane proteins that form gap junctions. Connexin 43 (Cx43), by far the most widely expressed connexin, is phosphorylated at multiple serine residues in the cytoplasmic, C-terminal region allowing for exquisite cellular control over gap junctional communication. This is evident during epidermal wounding where spatiotemporal changes in connexin expression occur as cells are instructed whether to die, proliferate or migrate to promote repair. Early gap junctional communication is required for initiation of keratinocyte migration, but accelerated Cx43 turnover is also critical for proper wound healing at later stages. These events are controlled via a "kinase program" where sequential phosphorylation of Cx43 leads to reductions in Cx43's half-life and significant depletion of gap junctions from the plasma membrane within several hours. The complex regulation of gap junction assembly and turnover affords several steps where intervention might speed wound healing. Copyright © 2015 Elsevier Ltd. All rights reserved.

Resolution of model Holliday junctions by yeast endonuclease: effect of DNA structure and sequence.

PubMed Central

Parsons, C A; Murchie, A I; Lilley, D M; West, S C

1989-01-01

The resolution of Holliday junctions in DNA involves specific cleavage at or close to the site of the junction. A nuclease from Saccharomyces cerevisiae cleaves model Holliday junctions in vitro by the introduction of nicks in regions of duplex DNA adjacent to the crossover point. In previous studies [Parsons and West (1988) Cell, 52, 621-629] it was shown that cleavage occurred within homologous arm sequences with precise symmetry across the junction. In contrast, junctions with heterologous arm sequences were cleaved asymmetrically. In this work, we have studied the effect of sequence changes and base modification upon the site of cleavage. It is shown that the specificity of cleavage is unchanged providing that perfect homology is maintained between opposing arm sequences. However, in the absence of homology, cleavage depends upon sequence context and is affected by minor changes such as base modification. These data support the proposed mechanism for cleavage of a Holliday junction, which requires homologous alignment of arm sequences in an enzyme--DNA complex as a prerequisite for symmetrical cleavage by the yeast endonuclease. Images PMID:2653810

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, D.S.; Hietala, V.M.; Hohenwarter, G.K.G.; Martens, J.S.; Plut, T.A.; Tigges, C.P.; Vawter, G.A.; Zipperian, T.E.

1994-10-25

A process is disclosed for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO[sub 3] crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O[sub 3], followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry. 8 figs.

Disruption of the epithelial barrier during intestinal inflammation: Quest for new molecules and mechanisms.

PubMed

Lechuga, Susana; Ivanov, Andrei I

2017-07-01

The intestinal epithelium forms a key protective barrier that separates internal organs from the harmful environment of the gut lumen. Increased permeability of the gut barrier is a common manifestation of different inflammatory disorders contributing to the severity of disease. Barrier permeability is controlled by epithelial adherens junctions and tight junctions. Junctional assembly and integrity depend on fundamental homeostatic processes such as cell differentiation, rearrangements of the cytoskeleton, and vesicle trafficking. Alterations of intestinal epithelial homeostasis during mucosal inflammation may impair structure and remodeling of apical junctions, resulting in increased permeability of the gut barrier. In this review, we summarize recent advances in our understanding of how altered epithelial homeostasis affects the structure and function of adherens junctions and tight junctions in the inflamed gut. Specifically, we focus on the transcription reprogramming of the cell, alterations in the actin cytoskeleton, and junctional endocytosis and exocytosis. We pay special attention to knockout mouse model studies and discuss the relevance of these mechanisms to human gastrointestinal disorders. Copyright © 2017 Elsevier B.V. All rights reserved.

An Inhibitory Innervation at the Gastroduodenal Junction

PubMed Central

Anuras, Sinn; Cooke, Allan R.; Christensen, James

1974-01-01

Transverse muscle strips, 2-mm wide, were cut serially from the gastroduodenal junction in opossums, cats, dogs, and man. Electrical field stimulation with trains of rectangular current pulses of 0.5 ms in all opossums, all cats, some dogs, and the one human specimen induced relaxation in strips from the thickened circular muscle proximal to the mucosal junction. In some opossums weak relaxations also occurred in the first few strips below the mucosal junction. All other strips contracted or showed no response. This relaxation in opossums was abolished by tetrodotoxin but was not affected by antagonists to adrenergic and cholinergic transmission, nor by tripelennamine, methysergide, pentagastrin, secretin, cerulein, or cholecystokinin. Optimal frequency for stimulus-relaxation was 12 Hz. Chronaxie was 0.85 ms. The junctional strips also showed greater resistances to stretch than those remote from the junction. With apparent species variations, the junctional muscle possesses a nonadrenergic inhibitory innervation which is either absent or unexpressed in adjacent muscle of stomach and duodenum. This suggests the existence of a distinctive inhibitory neural control mechanism for pyloric muscle. Images PMID:4152775

Late Pleistocene sediments and fossils near the mouth of Mad River, Humboldt County, California: Facies analysis, sequence development, and possible age correlation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, E.W.

Study of late Pleistocene-age sediments near the mouth of the Mad River revealed a sequence of nearshore marine and shallow bay deposits. This sequence, bounded by unconformities, is informally named the Mouth of Mad unit. The Mouth of mad unit can be divided into four distinct depositional facies at the study site. The lowest facies are the Nearshore Sand and Estuarine Mud, which lie unconformably on a paleosol. The sand facies grades upward into a high-energy, interbedded Nearshore Sand and Gravel facies containing storm and rip-channel deposits. Above the sand and gravel is a Strand-Plain Sand facies. This sand ismore » overlain by a laterally variable sequence of shell-rich Bay facies. The bay deposits can be further divided into five subfacies: (1) a Bioturbated Sand; (2) a Lower Tidal Flat Mud; (3) a Mixed Sand and Mud; (4) an oyster-rich Bay Mud; and (5) an Upper Tidal Flat Mud. The bay sequence is overlain unconformably by younger late Pleistocene-age marine terrace deposits. The depositional environments represented by these facies progress from a shoreline estuary to nearshore deposits, above storm wave base, and slowly back to shoreline and finally shallow bay conditions. The Mouth of Mad unit represents a transgressive-regressive sequence, involving the development of a protective spit. The uppermost mud within the Mouth of Mad unit has been dated, using thermoluminescence age estimation, at 176 [+-] 33 ka, placing it in the late Pleistocene. The Mouth of Mad unit appears to be younger than the fossiliferous deposits at Elk Head, Crannell Junction, Trinidad Head, Moonstone Beach, and the Falor Formation near Maple Creek, and possibly time equivalent with gravel deposits exposed at the western end of School Road in McKinleyville.« less

Sudden Morphometric Changes Induced by Diffuse Mass Wasting Processes

NASA Astrophysics Data System (ADS)

Moretti, S.; Casagli, N.; Catani, F.; Battistini, A.; Raspini, F.

2010-12-01

On October 1st, 2009, an exceptionally intense and prolonged rainfall event, preceded by two similar storms on 16 and 23-24 September, triggered a large number of shallow landslides in the province of Messina (Sicily), causing human losses and extensive damages. In a follow-up study a detailed geomorphological survey was carried out as well as a LIDAR digital elevation model. In this paper we present an attempt at using such data to model and understand the mass wasting processes and their consequences in terms of slope morphometry changes in one of the affected watersheds, the Briga creek. Here, the event was characterized by a sudden triggering of many similar shallow soil failures, generating in turn a sediment flow that moved along the main directions of drainage with high velocities and modalities ranging from debris flow to mud flow. The main damages were registered at the channel junctions and at the watershed outlet, where the major mass concentration was reached. Starting from the landslide inventory mapping carried out a few days after the event, we performed an analisys of mobilized volumes, using a method that numerically compares the pre-event and the post-event DEMs. Afterwards, we generated a very accurate, morphology-based reconstruction of flow directions for the entire watershed, in order to understand which were the main avenues of mass flow over the area and where most of the mobilized sediment was deposited. Finally, combining the extensive data connected with landslide scars with a statistical model for the prediction of regolith thickness, we propose a distributed model of colluvium depth for the Briga watershed. The use of this dataset together with present-day topography as derived from LIDAR data allows for the definition of topographic and bedrock gradient maps which, in turn, constitute an important step towards the definition of the actual boundary conditions for slope stability analysis. We believe that this will be a fundamental component for the definition of the residual risk in the area

Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

NASA Astrophysics Data System (ADS)

Chen, C.-H.; Gösele, U. M.; Tan, T. Y.

We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa+ and as shallow acceptor species SiAs-. The solubility of SiAs- is much lower than that of SiGa+ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa+ which will convert into SiAs- in accordance with their solubilities and that the point defect species governing the diffusion of SiGa+ are triply-negatively-charged Ga vacancies VGa3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.

Nanotechnology with Carbon Nanotubes: Mechanics, Chemistry, and Electronics

NASA Technical Reports Server (NTRS)

Srivastava, Deepak

2003-01-01

This viewgraph presentation reviews the Nanotechnology of carbon nanotubes. The contents include: 1) Nanomechanics examples; 2) Experimental validation of nanotubes in composites; 3) Anisotropic plastic collapse; 4) Spatio-temporal scales, yielding single-wall nanotubes; 5) Side-wall functionalization of nanotubes; 6) multi-wall Y junction carbon nanotubes; 7) Molecular electronics with Nanotube junctions; 8) Single-wall carbon nanotube junctions; welding; 9) biomimetic dendritic neurons: Carbon nanotube, nanotube electronics (basics), and nanotube junctions for Devices,

Four photon parametric amplification. [in unbiased Josephson junction

NASA Technical Reports Server (NTRS)

Parrish, P. T.; Feldman, M. J.; Ohta, H.; Chiao, R. Y.

1974-01-01

An analysis is presented describing four-photon parametric amplification in an unbiased Josephson junction. Central to the theory is the model of the Josephson effect as a nonlinear inductance. Linear, small signal analysis is applied to the two-fluid model of the Josephson junction. The gain, gain-bandwidth product, high frequency limit, and effective noise temperature are calculated for a cavity reflection amplifier. The analysis is extended to multiple (series-connected) junctions and subharmonic pumping.

E-cadherin junction formation involves an active kinetic nucleation process

PubMed Central

Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng-han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan-Chen; Guo, Zhenhuan; Padmanabhan, Anup; Troyanovsky, Sergey M.; Dustin, Michael L.; Shapiro, Lawrence; Honig, Barry; Zaidel-Bar, Ronen; Groves, Jay T.

2015-01-01

Epithelial (E)-cadherin-mediated cell−cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin (E-cad-ECD) in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest that the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role. PMID:26290581

Superconducting current injection transistor with very high critical-current-density edge-junctions

NASA Astrophysics Data System (ADS)

van Zeghbroeck, B. J.

1985-03-01

A Superconducting Current Injection Transistor (Super-CIT) was fabricated with very high critical current-density edge-junctions. The junctions have a niobium base electrode and a lead-alloy counter electrode. The length of the junctions is 30 microns and the critical-current density is 190KA/sq cm. The Super-CIT has a current gain of 2, a large signal transresistance of 100 mV/A, and the turn-on delay, inferred from the junction resonance, is 7ps. The power dissipation is 3.5 microwatts and the power-delay product is 24.5aJ. Gap reduction due to heating was observed, limiting the maximum power dissipation per unit length to 1.1 microwatt/micron. Compared to lead-alloy Super-CITs, the device is five times smaller, three times faster, and has a three times larger output voltage. The damping resistor and the contact junction could also be eliminated.

Spin-polarized current in Zeeman-split d-wave superconductor/quantum wire junctions

NASA Astrophysics Data System (ADS)

Emamipour, Hamidreza

2016-06-01

We study a thin-film quantum wire/unconventional superconductor junction in the presence of an intrinsic exchange field for a d-wave symmetry of the superconducting order parameter. A strongly spin-polarized current is generated due to an interplay between Zeeman splitting of bands and the nodal structure of the superconducting order parameter. We show that strongly spin-polarized current is achievable for both metallic and tunnel junctions. This is because of the presence of a quantum wire (one-dimensional metal) in our junction. While in two-dimensional junctions with both conventional [F. Giazotto, F. Taddei, Phys. Rev. B 77 (2008) 132501] and unconventional [J. Linder, T. Yokoyama, Y. Tanaka, A. Sudbo, Phys. Rev. B 78 (2008) 014516] pairing states, highly spin polarized current takes place just for a tunnel junction. Also, the obtained spin-polarized current is tunable in sign and magnitude in terms of exchange field and applied bias voltage.

"V-junction": a novel structure for high-speed generation of bespoke droplet flows.

PubMed

Ding, Yun; Casadevall i Solvas, Xavier; deMello, Andrew

2015-01-21

We present the use of microfluidic "V-junctions" as a droplet generation strategy that incorporates enhanced performance characteristics when compared to more traditional "T-junction" formats. This includes the ability to generate target-sized droplets from the very first one, efficient switching between multiple input samples, the production of a wide range of droplet sizes (and size gradients) and the facile generation of droplets with residence time gradients. Additionally, the use of V-junction droplet generators enables the suspension and subsequent resumption of droplet flows at times defined by the user. The high degree of operational flexibility allows a wide range of droplet sizes, payloads, spacings and generation frequencies to be obtained, which in turn provides for an enhanced design space for droplet-based experimentation. We show that the V-junction retains the simplicity of operation associated with T-junction formats, whilst offering functionalities normally associated with droplet-on-demand technologies.

E-cadherin junction formation involves an active kinetic nucleation process

DOE PAGES

Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; ...

2015-08-19

Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest thatmore » the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less

E-cadherin junction formation involves an active kinetic nucleation process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han

Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest thatmore » the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less

Synergistic effect of ATP for RuvA-RuvB-Holliday junction DNA complex formation.

PubMed

Iwasa, Takuma; Han, Yong-Woon; Hiramatsu, Ryo; Yokota, Hiroaki; Nakao, Kimiko; Yokokawa, Ryuji; Ono, Teruo; Harada, Yoshie

2015-12-14

The Escherichia coli RuvB hexameric ring motor proteins, together with RuvAs, promote branch migration of Holliday junction DNA. Zero mode waveguides (ZMWs) constitute of nanosized holes and enable the visualization of a single fluorescent molecule under micromolar order of the molecules, which is applicable to characterize the formation of RuvA-RuvB-Holliday junction DNA complex. In this study, we used ZMWs and counted the number of RuvBs binding to RuvA-Holliday junction DNA complex. Our data demonstrated that different nucleotide analogs increased the amount of Cy5-RuvBs binding to RuvA-Holliday junction DNA complex in the following order: no nucleotide, ADP, ATPγS, and mixture of ADP and ATPγS. These results suggest that not only ATP binding to RuvB but also ATP hydrolysis by RuvB facilitates a stable RuvA-RuvB-Holliday junction DNA complex formation.

Gas-liquid flow splitting in T-junction with inclined lateral arm

NASA Astrophysics Data System (ADS)

Yang, Le-le; Liu, Shuo; Li, Hua; Zhang, Jian; Wu, Ying-xiang; Xu, Jing-yu

2018-02-01

This paper studies the gas-liquid flow splitting in T-junction with inclined lateral arm. The separation mechanism of the T-junction is related to the pressure distribution in the T-junction. It is shown that the separation efficiency strongly depends on the inclination angle, when the angle ranges from 0° to 30°, while not so strongly for angles in the range from 30° to 90° Increasing the number of connecting tubes is helpful for the gas-liquid separation, and under the present test conditions, with four connecting tubes, a good separation performance can be achieved. Accordingly, a multi-tube Y-junction separator with four connecting tubes is designed for the experimental investigation. A good agreement between the simulated and measured data shows that there is an optimal split ratio to achieve the best performance for the multi-tube Y-junction separator.

Smallest fullerene-like clusters in two-probe device junctions: first principle study

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

2017-07-01

First principle calculations based on density functional theory are realised to investigate the electron transport of the smallest fullerene-like clusters as two-probe junction devices. The junction devices are constructed by mechanically controlled break junction techniques to ensure the maximum stability of the Be20, B20 and N20 cluster molecular junctions. We investigate the density of states, transmission spectrum, molecular orbitals, current and differential conductance characteristics at discrete bias voltages to gain insight about the various transport phenomena occurring in these nano-junctions. The results show that B20 molecule when stringed to gold electrodes works as an ideal nano-device similar to the pure C20 device and is more symmetric in its characteristic nature. However, in N20 molecular device, the conduction is negligible due to the higher atomic interactions within N20 molecule, despite the fact that it is constructed with penta-valent atoms.

Dilute group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw; Yu, Kin Man

2015-02-24

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA

2012-07-31

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Effect of Impurities on the Josephson Current through Helical Metals: Exploiting a Neutrino Paradigm.

PubMed

Ghaemi, Pouyan; Nair, V P

2016-01-22

In this Letter we study the effect of time-reversal symmetric impurities on the Josephson supercurrent through two-dimensional helical metals such as on a topological insulator surface state. We show that, contrary to the usual superconducting-normal metal-superconducting junctions, the suppression of the supercurrent in the superconducting-helical metal-superconducting junction is mainly due to fluctuations of impurities in the junctions. Our results, which are a condensed matter realization of a part of the Mikheyev-Smirnov-Wolfenstein effect for neutrinos, show that the relationship between normal state conductance and the critical current of Josephson junctions is significantly modified for Josephson junctions on the surface of topological insulators. We also study the temperature dependence of the supercurrent and present a two fluid model which can explain some of the recent experimental results in Josephson junctions on the edge of topological insulators.

Effect of Impurities on the Josephson Current through Helical Metals: Exploiting a Neutrino Paradigm

NASA Astrophysics Data System (ADS)

Ghaemi, Pouyan; Nair, V. P.

2016-01-01

In this Letter we study the effect of time-reversal symmetric impurities on the Josephson supercurrent through two-dimensional helical metals such as on a topological insulator surface state. We show that, contrary to the usual superconducting-normal metal-superconducting junctions, the suppression of the supercurrent in the superconducting-helical metal-superconducting junction is mainly due to fluctuations of impurities in the junctions. Our results, which are a condensed matter realization of a part of the Mikheyev-Smirnov-Wolfenstein effect for neutrinos, show that the relationship between normal state conductance and the critical current of Josephson junctions is significantly modified for Josephson junctions on the surface of topological insulators. We also study the temperature dependence of the supercurrent and present a two fluid model which can explain some of the recent experimental results in Josephson junctions on the edge of topological insulators.

Spinal gap junctions: potential involvement in pain facilitation.

PubMed

Spataro, Leah E; Sloane, Evan M; Milligan, Erin D; Wieseler-Frank, Julie; Schoeniger, Diana; Jekich, Brian M; Barrientos, Ruth M; Maier, Steven F; Watkins, Linda R

2004-09-01

Glia are now recognized as important contributors in pathological pain creation and maintenance. Spinal cord glia exhibit extensive gap junctional connectivity, raising the possibility that glia are involved in the contralateral spread of excitation resulting in mirror image pain. In the present experiments, the gap junction decoupler carbenoxolone was administered intrathecally after induction of neuropathic pain in response to sciatic nerve inflammation (sciatic inflammatory neuropathy) or partial nerve injury (chronic constriction injury). In both neuropathic pain models, a low dose of carbenoxolone reversed mirror image mechanical allodynia, while leaving ipsilateral mechanical allodynia unaffected. Ipsilateral thermal hyperalgesia was briefly attenuated. Critically, blockade of mechanical allodynia and thermal hyperalgesia was not observed in response to intrathecal glycyrrhizic acid, a compound similar to carbenoxolone in all respects but it does not decouple gap junctions. Thus, blockade of mechanical allodynia and thermal hyperalgesia by carbenoxolone does appear to reflect an effect on gap junctions. Examination of carbenoxolone's effects on intrathecal human immunodeficiency virus type 1 gp120 showed that blockade of pain facilitation might result, at least in part, via suppression of interleukin-1 and, in turn, interleukin-6. These data provide the first suggestion that spread of excitation via gap junctions might contribute importantly to inflammatory and traumatic neuropathic pain. The current studies provide evidence for involvement of gap junctions in spinal cord pain facilitation. Intrathecal carbenoxolone, a gap junction decoupler, reversed neuropathy-induced mirror image pain and intrathecal gp120-induced allodynia. In addition, it decreased gp120-induced proinflammatory cytokines. This suggests gap junction activation might lead to proinflammatory cytokine release by distantly activated glia.

Death of Neurons following Injury Requires Conductive Neuronal Gap Junction Channels but Not a Specific Connexin

PubMed Central

Fontes, Joseph D.; Ramsey, Jon; Polk, Jeremy M; Koop, Andre; Denisova, Janna V.; Belousov, Andrei B.

2015-01-01

Pharmacological blockade or genetic knockout of neuronal connexin 36 (Cx36)-containing gap junctions reduces neuronal death caused by ischemia, traumatic brain injury and NMDA receptor (NMDAR)-mediated excitotoxicity. However, whether Cx36 gap junctions contribute to neuronal death via channel-dependent or channel-independent mechanism remains an open question. To address this, we manipulated connexin protein expression via lentiviral transduction of mouse neuronal cortical cultures and analyzed neuronal death twenty-four hours following administration of NMDA (a model of NMDAR excitotoxicity) or oxygen-glucose deprivation (a model of ischemic injury). In cultures prepared from wild-type mice, over-expression and knockdown of Cx36-containing gap junctions augmented and prevented, respectively, neuronal death from NMDAR-mediated excitotoxicity and ischemia. In cultures obtained form from Cx36 knockout mice, re-expression of functional gap junction channels, containing either neuronal Cx36 or non-neuronal Cx43 or Cx31, resulted in increased neuronal death following insult. In contrast, the expression of communication-deficient gap junctions (containing mutated connexins) did not have this effect. Finally, the absence of ethidium bromide uptake in non-transduced wild-type neurons two hours following NMDAR excitotoxicity or ischemia suggested the absence of active endogenous hemichannels in those neurons. Taken together, these results suggest a role for neuronal gap junctions in cell death via a connexin type-independent mechanism that likely relies on channel activities of gap junctional complexes among neurons. A possible contribution of gap junction channel-permeable death signals in neuronal death is discussed. PMID:26017008

Cell-cell interactions of isolated and cultured oligodendrocytes: formation of linear occluding junctions and expression of peculiar intramembrane particles.

PubMed

Massa, P T; Szuchet, S; Mugnaini, E

1984-12-01

Oligodendrocytes were isolated from lamb brain. Freshly isolated cells and cultured cells, either 1- to 4-day-old unattached or 1- to 5-week-old attached, were examined by thin section and freeze-fracture electron microscopy. Freeze-fracture of freshly isolated oligodendrocytes showed globular and elongated intramembrane particles similar to those previously described in oligodendrocytes in situ. Enrichment of these particles was seen at sites of inter-oligodendrocyte contact. Numerous gap junctions and scattered linear tight junctional arrays were apparent. Gap junctions were connected to blebs of astrocytic plasma membrane sheared off during isolation, whereas tight junctions were facing extracellular space or blebs of oligodendrocytic plasma membrane. Thin sections of cultured, unattached oligodendrocytes showed rounded cell bodies touching one another at points without forming specialized cell junctions. Cells plated on polylysine-coated aclar dishes attached, emanated numerous, pleomorphic processes, and expressed galactocerebroside and myelin basic protein, characteristic markers for oligodendrocytes. Thin sections showed typical oligodendrocyte ultrastructure but also intermediate filaments not present in unattached cultures. Freeze-fracture showed intramembrane particles similar to but more numerous, and with a different fracture face repartition, than those seen in oligodendrocytes, freshly isolated or in situ. Gap junctions were small and rare. Apposed oligodendrocyte plasma membrane formed linear tight junctions which became more numerous with time in culture. Thus, cultured oligodendrocytes isolated from ovine brains develop and maintain features characteristic of mature oligodendrocytes in situ and can be used to explore formation and maintenance of tight junctions and possibly other classes of cell-cell interactions important in the process of myelination.

Finding the optimal lengths for three branches at a junction.

PubMed

Woldenberg, M J; Horsfield, K

1983-09-21

This paper presents an exact analytical solution to the problem of locating the junction point between three branches so that the sum of the total costs of the branches is minimized. When the cost per unit length of each branch is known the angles between each pair of branches can be deduced following reasoning first introduced to biology by Murray. Assuming the outer ends of each branch are fixed, the location of the junction and the length of each branch are then deduced using plane geometry and trigonometry. The model has applications in determining the optimal cost of a branch or branches at a junction. Comparing the optimal to the actual cost of a junction is a new way to compare cost models for goodness of fit to actual junction geometry. It is an unambiguous measure and is superior to comparing observed and optimal angles between each daughter and the parent branch. We present data for 199 junctions in the pulmonary arteries of two human lungs. For the branches at each junction we calculated the best fitting value of x from the relationship that flow alpha (radius)x. We found that the value of x determined whether a junction was best fitted by a surface, volume, drag or power minimization model. While economy of explanation casts doubt that four models operate simultaneously, we found that optimality may still operate, since the angle to the major daughter is less than the angle to the minor daughter. Perhaps optimality combined with a space filling branching pattern governs the branching geometry of the pulmonary artery.

Simple Electronic Analog of a Josephson Junction.

ERIC Educational Resources Information Center

Henry, R. W.; And Others

1981-01-01

Demonstrates that an electronic Josephson junction analog constructed from three integrated circuits plus an external reference oscillator can exhibit many of the circuit phenomena of a real Josephson junction. Includes computer and other applications of the analog. (Author/SK)

75 FR 57024 - Decision To Evaluate a Petition To Designate a Class of Employees From the Grand Junction...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-09-17

...: Grand Junction Operations Office. Location: Grand Junction, Colorado. Job Titles and/or Job Duties: All..., Division of Compensation Analysis and Support, National Institute for Occupational Safety and Health (NIOSH...

Hazardous Waste Cleanup: SI Group Incorporated in Rotterdam Junction, New York

EPA Pesticide Factsheets

SI Group, Inc., formerly Schenectady International, Inc., Rotterdam Junction facility encompasses approximately 60 acres in Lower Rotterdam Junction, Schenectady County, New York. The facility is situated on the southwest bank of the Mohawk River, north of

Summary of mathematical models for a conventional and vertical junction photoconverter

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.

1986-01-01

The geometry and computer programming for mathematical models of a one-dimensional conventional photoconverter, a one-dimensional vertical junction photoconverter, a three-dimensional conventinal photoconverter, and a three-dimensional vertical junction solar cell are discussed.

Modeling single molecule junction mechanics as a probe of interface bonding

NASA Astrophysics Data System (ADS)

Hybertsen, Mark S.

2017-03-01

Using the atomic force microscope based break junction approach, applicable to metal point contacts and single molecule junctions, measurements can be repeated thousands of times resulting in rich data sets characterizing the properties of an ensemble of nanoscale junction structures. This paper focuses on the relationship between the measured force extension characteristics including bond rupture and the properties of the interface bonds in the junction. A set of exemplary model junction structures has been analyzed using density functional theory based calculations to simulate the adiabatic potential surface that governs the junction elongation. The junction structures include representative molecules that bond to the electrodes through amine, methylsulfide, and pyridine links. The force extension characteristics are shown to be most effectively analyzed in a scaled form with maximum sustainable force and the distance between the force zero and force maximum as scale factors. Widely used, two parameter models for chemical bond potential energy versus bond length are found to be nearly identical in scaled form. Furthermore, they fit well to the present calculations of N-Au and S-Au donor-acceptor bonds, provided no other degrees of freedom are allowed to relax. Examination of the reduced problem of a single interface, but including relaxation of atoms proximal to the interface bond, shows that a single-bond potential form renormalized by an effective harmonic potential in series fits well to the calculated results. This allows relatively accurate extraction of the interface bond energy. Analysis of full junction models shows cooperative effects that go beyond the mechanical series inclusion of the second bond in the junction, the spectator bond that does not rupture. Calculations for a series of diaminoalkanes as a function of molecule length indicate that the most important cooperative effect is due to the interactions between the dipoles induced by the donor-acceptor bond formation at the junction interfaces. The force extension characteristic of longer molecules such as diaminooctane, where the dipole interaction effects drop to a negligible level, accurately fit to the renormalized single-bond potential form. The results suggest that measured force extension characteristics for single molecule junctions could be analyzed with a modified potential form that accounts for the energy stored in deformable mechanical components in series.

Probing Electronic and Thermoelectric Properties of Single Molecule Junctions

NASA Astrophysics Data System (ADS)

Widawsky, Jonathan R.

In an effort to further understand electronic and thermoelectric phenomenon at the nanometer scale, we have studied the transport properties of single molecule junctions. To carry out these transport measurements, we use the scanning tunneling microscope-break junction (STM-BJ) technique, which involves the repeated formation and breakage of a metal point contact in an environment of the target molecule. Using this technique, we are able to create gaps that can trap the molecules, allowing us to sequentially and reproducibly create a large number of junctions. By applying a small bias across the junction, we can measure its conductance and learn about the transport mechanisms at the nanoscale. The experimental work presented here directly probes the transmission properties of single molecules through the systematic measurement of junction conductance (at low and high bias) and thermopower. We present measurements on a variety of molecular families and study how conductance depends on the character of the linkage (metal-molecule bond) and the nature of the molecular backbone. We start by describing a novel way to construct single molecule junctions by covalently connecting the molecular backbone to the electrodes. This eliminates the use of linking substituents, and as a result, the junction conductance increases substantially. Then, we compare transport across silicon chains (silanes) and saturated carbon chains (alkanes) while keeping the linkers the same and find a stark difference in their electronic transport properties. We extend our studies of molecular junctions by looking at two additional aspects of quantum transport -- molecular thermopower and molecular current-voltage characteristics. Each of these additional parameters gives us further insight into transport properties at the nanoscale. Evaluating the junction thermopower allows us to determine the nature of charge carriers in the system and we demonstrate this by contrasting the measurement of amine-terminated and pyridine-terminated molecules (which exhibit hole transport and electron transport, respectively). We also report the thermopower of the highly conducting, covalently bound molecular junctions that we have recently been able to form, and learn that, because of their unique transport properties, the junction power factors, GS2, are extremely high. Finally, we discuss the measurement of molecular current-voltage curves and consider the electronic and physical effects of applying a large bias to the system. We conclude with a summary of the work discussed and an outlook on related scientific studies.

Modeling single molecule junction mechanics as a probe of interface bonding

DOE PAGES

Hybertsen, Mark S.

2017-03-07

Using the atomic force microscope based break junction approach, applicable to metal point contacts and single molecule junctions, measurements can be repeated thousands of times resulting in rich data sets characterizing the properties of an ensemble of nanoscale junction structures. This paper focuses on the relationship between the measured force extension characteristics including bond rupture and the properties of the interface bonds in the junction. We analyzed a set of exemplary model junction structures using density functional theory based calculations to simulate the adiabatic potential surface that governs the junction elongation. The junction structures include representative molecules that bond tomore » the electrodes through amine, methylsulfide, and pyridine links. The force extension characteristics are shown to be most effectively analyzed in a scaled form with maximum sustainable force and the distance between the force zero and force maximum as scale factors. Widely used, two parameter models for chemical bond potential energy versus bond length are found to be nearly identical in scaled form. Furthermore, they fit well to the present calculations of N–Au and S–Au donor-acceptor bonds, provided no other degrees of freedom are allowed to relax. Examination of the reduced problem of a single interface, but including relaxation of atoms proximal to the interface bond, shows that a single-bond potential form renormalized by an effective harmonic potential in series fits well to the calculated results. This, then, allows relatively accurate extraction of the interface bond energy. Analysis of full junction models shows cooperative effects that go beyond the mechanical series inclusion of the second bond in the junction, the spectator bond that does not rupture. Calculations for a series of diaminoalkanes as a function of molecule length indicate that the most important cooperative effect is due to the interactions between the dipoles induced by the donor-acceptor bond formation at the junction interfaces. The force extension characteristic of longer molecules such as diaminooctane, where the dipole interaction effects drop to a negligible level, accurately fit to the renormalized single-bond potential form. Our results suggest that measured force extension characteristics for single molecule junctions could be analyzed with a modified potential form that accounts for the energy stored in deformable mechanical components in series.« less

Modeling single molecule junction mechanics as a probe of interface bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hybertsen, Mark S.

Using the atomic force microscope based break junction approach, applicable to metal point contacts and single molecule junctions, measurements can be repeated thousands of times resulting in rich data sets characterizing the properties of an ensemble of nanoscale junction structures. This paper focuses on the relationship between the measured force extension characteristics including bond rupture and the properties of the interface bonds in the junction. We analyzed a set of exemplary model junction structures using density functional theory based calculations to simulate the adiabatic potential surface that governs the junction elongation. The junction structures include representative molecules that bond tomore » the electrodes through amine, methylsulfide, and pyridine links. The force extension characteristics are shown to be most effectively analyzed in a scaled form with maximum sustainable force and the distance between the force zero and force maximum as scale factors. Widely used, two parameter models for chemical bond potential energy versus bond length are found to be nearly identical in scaled form. Furthermore, they fit well to the present calculations of N–Au and S–Au donor-acceptor bonds, provided no other degrees of freedom are allowed to relax. Examination of the reduced problem of a single interface, but including relaxation of atoms proximal to the interface bond, shows that a single-bond potential form renormalized by an effective harmonic potential in series fits well to the calculated results. This, then, allows relatively accurate extraction of the interface bond energy. Analysis of full junction models shows cooperative effects that go beyond the mechanical series inclusion of the second bond in the junction, the spectator bond that does not rupture. Calculations for a series of diaminoalkanes as a function of molecule length indicate that the most important cooperative effect is due to the interactions between the dipoles induced by the donor-acceptor bond formation at the junction interfaces. The force extension characteristic of longer molecules such as diaminooctane, where the dipole interaction effects drop to a negligible level, accurately fit to the renormalized single-bond potential form. Our results suggest that measured force extension characteristics for single molecule junctions could be analyzed with a modified potential form that accounts for the energy stored in deformable mechanical components in series.« less

High-efficiency thermal switch based on topological Josephson junctions

NASA Astrophysics Data System (ADS)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

A proposed route to independent measurements of tight junction conductance at discrete cell junctions

PubMed Central

Zhou, Lushan; Zeng, Yuhan; Baker, Lane A; Hou, Jianghui

2015-01-01

Direct recording of tight junction permeability is of pivotal importance to many biologic fields. Previous approaches bear an intrinsic disadvantage due to the difficulty of separating tight junction conductance from nearby membrane conductance. Here, we propose the design of Double whole-cell Voltage Clamp - Ion Conductance Microscopy (DVC-ICM) based on previously demonstrated potentiometric scanning of local conductive pathways. As proposed, DVC-ICM utilizes two coordinated whole-cell patch-clamps to neutralize the apical membrane current during potentiometric scanning, which in models described here will profoundly enhance the specificity of tight junction recording. Several potential pitfalls are considered, evaluated and addressed with alternative countermeasures. PMID:26716077

Switching Dynamics of an Underdamped Josephson Junction Coupled to a Microwave Cavity

NASA Astrophysics Data System (ADS)

Oelsner, G.; Il'ichev, E.

2018-05-01

Current-biased Josephson junctions are promising candidates for the detection of single photons in the microwave frequency domain. With modern fabrication technologies, the switching properties of the junction can be adjusted to achieve quantum limited sensitivity. Namely, the width of the switching current distribution can be reduced well below the current amplitude produced by a single photon trapped inside a superconducting cavity. However, for an effective detection a strong junction cavity coupling is required, providing nonlinear system dynamics. We compare experimental findings for our prototype device with a theoretical analysis aimed to describe the switching dynamics of junctions under microwave irradiation. Measurements are found in qualitative agreement with our simulations.

Grand Junction, Colorado: how a community drew on its values to shape a superior health system.

PubMed

Thorson, Marsha; Brock, Jane; Mitchell, Jason; Lynn, Joanne

2010-09-01

For the past decade, the high-quality, relatively low-cost health care delivered in Grand Junction, Colorado, has led that community to outperform most others in the United States. Medicare patients in Grand Junction have fewer hospitalizations, shorter hospitalizations, and lower mortality rates after hospitalization than do Medicare patients in comparison hospitals. Effective, efficient care is delivered in Grand Junction through separate, self-governing organizations that perceive health care as a community resource. This article describes how the various stakeholders in Grand Junction have addressed problems and set standards for the system. The lessons could apply to broader health reform efforts in communities around the country.

Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells

NASA Astrophysics Data System (ADS)

Mintairov, M. A.; Evstropov, V. V.; Mintairov, S. A.; Shvarts, M. Z.; Kozhukhovskaia, S. A.; Kalyuzhnyy, N. A.

2017-11-01

The existence within monolithic double- and triple-junction solar cells of a photoelectric source, which counteracts the basic photovoltaic p-n junctions, is proved. The paper presents a detailed analysis of the shape of the light IV-characteristics, as well as the dependence Voc-Jsc (open circuit voltage - short-circuit current). It is established that the counteracting source is tunnel p+-n+ junction. The photoelectric characteristics of samples with different tunnel diode peak current values were investigated, including the case of a zero value. When the tunnel p+-n+ junction is photoactive, the Voc-Jsc dependence has a dropping part, including a sharp jump. This undesirable effect decreases with increasing peak current.

Broad spectrum solar cell

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA; Wu, Junqiao [Richmond, CA; Schaff, William J [Ithaca, NY

2007-05-15

An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Underdamped long Josephson junction coupled to overdamped single-flux-quantum circuits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.M.; Borzenets, V.; Kaplunenko, V.K.

1997-09-01

We report a circuit that integrates an underdamped long Josephson junction with overdamped single-flux-quantum (SFQ) circuits. We confirm that the resonant soliton modes in the long junction are not affected by SFQ cells coupled to the junction, and demonstrate that the radiation frequency and linewidth of the soliton resonances can be measured with SFQ T-flip-flops. Our experimental results also show that a 4{pi} quantum mechanical phase leap at the end of the long junction, which is due to the reflection of a soliton, creates two single flux quanta propagating in the overdamped Josephson transmission line. {copyright} {ital 1997 American Institutemore » of Physics.}« less

Josephson junction Q-spoiler

DOEpatents

Clarke, J.; Hilbert, C.; Hahn, E.L.; Sleator, T.

1986-03-25

An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

Josephson junction Q-spoiler

DOEpatents

Clarke, John; Hilbert, Claude; Hahn, Erwin L.; Sleator, Tycho

1988-01-01

An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

Investigation of the Carbon Arc Source as an AM0 Solar Simulator for Use in Characterizing Multi-Junction Solar Cells

NASA Technical Reports Server (NTRS)

Xu, Jianzeng; Woodyward, James R.

2005-01-01

The operation of multi-junction solar cells used for production of space power is critically dependent on the spectral irradiance of the illuminating light source. Unlike single-junction cells where the spectral irradiance of the simulator and computational techniques may be used to optimized cell designs, optimization of multi-junction solar cell designs requires a solar simulator with a spectral irradiance that closely matches AM0.

Optimization of an Advanced Multi-Junction Solar-Cell Design for Space Environments (AM0) Using Nearly Orthogonal Latin Hypercubes

DTIC Science & Technology

2017-06-01

AN ADVANCED MULTI-JUNCTION SOLAR -CELL DESIGN FOR SPACE ENVIRONMENTS (AM0) USING NEARLY ORTHOGONAL LATIN HYPERCUBES by Silvio Pueschel June...ADVANCED MULTI-JUNCTION SOLAR -CELL DESIGN FOR SPACE ENVIRONMENTS (AM0) USING NEARLY ORTHOGONAL LATIN HYPERCUBES 5. FUNDING NUMBERS 6. AUTHOR(S) Silvio...multi-junction solar cells with Silvaco Atlas simulation software. It introduces the nearly orthogonal Latin hypercube (NOLH) design of experiments (DoE

Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.

PubMed

Fan, Congcheng; Zoombelt, Arjan P; Jiang, Hao; Fu, Weifei; Wu, Jiake; Yuan, Wentao; Wang, Yong; Li, Hanying; Chen, Hongzheng; Bao, Zhenan

2013-10-25

Organic single-crystalline p-n junctions are grown from mixed solutions. First, C60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plant-derived triterpene celastrol ameliorates oxygen glucose deprivation-induced disruption of endothelial barrier assembly via inducing tight junction proteins.

PubMed

Luo, Dan; Zhao, Jia; Rong, Jianhui

2016-12-01

The integrity and functions of blood-brain barrier (BBB) are regulated by the expression and organization of tight junction proteins. The present study was designed to explore whether plant-derived triterpenoid celastrol could regulate tight junction integrity in murine brain endothelial bEnd3 cells. We disrupted the tight junctions between endothelial bEnd3 cells by oxygen glucose deprivation (OGD). We investigated the effects of celastrol on the permeability of endothelial monolayers by measuring transepithelial electrical resistance (TEER). To clarify the tight junction composition, we analyzed the expression of tight junction proteins by RT-PCR and Western blotting techniques. We found that celastrol recovered OGD-induced TEER loss in a concentration-dependent manner. Celastrol induced occludin, claudin-5 and zonula occludens-1 (ZO-1) in endothelial cells. As a result, celastrol effectively maintained tight junction integrity and inhibited macrophage migration through endothelial monolayers against OGD challenge. Further mechanistic studies revealed that celastrol induced the expression of occludin and ZO-1) via activating MAPKs and PI3K/Akt/mTOR pathway. We also observed that celastrol regulated claudin-5 expression through different mechanisms. The present study demonstrated that celastrol effectively protected tight junction integrity against OGD-induced damage. Thus, celastrol could be a drug candidate for the treatment of BBB dysfunction in various diseases. Copyright © 2016 Elsevier GmbH. All rights reserved.

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Modulation of Intestinal Paracellular Transport by Bacterial Pathogens.

PubMed

Roxas, Jennifer Lising; Viswanathan, V K

2018-03-25

The passive and regulated movement of ions, solutes, and water via spaces between cells of the epithelial monolayer plays a critical role in the normal intestinal functioning. This paracellular pathway displays a high level of structural and functional specialization, with the membrane-spanning complexes of the tight junctions, adherens junctions, and desmosomes ensuring its integrity. Tight junction proteins, like occludin, tricellulin, and the claudin family isoforms, play prominent roles as barriers to unrestricted paracellular transport. The past decade has witnessed major advances in our understanding of the architecture and function of epithelial tight junctions. While it has been long appreciated that microbes, notably bacterial and viral pathogens, target and disrupt junctional complexes and alter paracellular permeability, the precise mechanisms remain to be defined. Notably, renewed efforts will be required to interpret the available data on pathogen-mediated barrier disruption in the context of the most recent findings on tight junction structure and function. While much of the focus has been on pathogen-induced dysregulation of junctional complexes, commensal microbiota and their products may influence paracellular permeability and contribute to the normal physiology of the gut. Finally, microbes and their products have become important tools in exploring host systems, including the junctional properties of epithelial cells. © 2018 American Physiological Society. Compr Physiol 8:823-842, 2018. Copyright © 2018 American Physiological Society. All rights reserved.

Intercellular ice propagation: experimental evidence for ice growth through membrane pores.

PubMed Central

Acker, J P; Elliott, J A; McGann, L E

2001-01-01

Propagation of intracellular ice between cells significantly increases the prevalence of intracellular ice in confluent monolayers and tissues. It has been proposed that gap junctions facilitate ice propagation between cells. This study develops an equation for capillary freezing-point depression to determine the effect of temperature on the equilibrium radius of an ice crystal sufficiently small to grow through gap junctions. Convection cryomicroscopy and video image analysis were used to examine the incidence and pattern of intracellular ice formation (IIF) in the confluent monolayers of cell lines that do (MDCK) and do not (V-79W) form gap junctions. The effect of gap junctions on intracellular ice propagation was strongly temperature-dependent. For cells with gap junctions, IIF occurred in a directed wave-like pattern in 100% of the cells below -3 degrees C. At temperatures above -3 degrees C, there was a marked drop in the incidence of IIF, with isolated individual cells initially freezing randomly throughout the sample. This random pattern of IIF was also observed in the V-79W monolayers and in MDCK monolayers treated to prevent gap junction formation. The significant change in the low temperature behavior of confluent MDCK monolayers at -3 degrees C is likely the result of the inhibition of gap junction-facilitated ice propagation, and supports the theory that gap junctions facilitate ice nucleation between cells. PMID:11509353

Atomically thin p-n junctions with van der Waals heterointerfaces.

PubMed

Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F; Guo, Jing; Hone, James; Kim, Philip

2014-09-01

Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors--each just one unit cell thick--are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.

Origin of hydrogen-inclusion-induced critical current deviation in Nb/AlOx/Al/Nb Josephson junctions

NASA Astrophysics Data System (ADS)

Hinode, Kenji; Satoh, Tetsuro; Nagasawa, Shuichi; Hidaka, Mutsuo

2010-04-01

We investigated the mechanisms that change the critical current density (Jc) of Nb/AlOx/Al/Nb Josephson junctions due to the inclusion of hydrogen in the Nb electrodes. Our investigations were performed according to three aspects: the superconductivity change, the change in thickness of the barrier layer, and the change in the barrier height due to the electronic effect. The results are as follows: (a) the hydrogen-inclusion-accompanied changes in the superconductivity parameters, such as the junction gap voltage, were much less than those of the critical current density, (b) the effect of hydrogen inclusion on Jc varied depending on the electrodes, i.e., the upper electrode above the barrier layer was the most affected, (c) the junctions with increased Ics due to hydrogen exclusion showed the identical amount of decrease in the junction resistance measured at room temperature, and (d) the hydrogen exclusion from the junction electrodes had no influence on the Nb/Al/AlOx/Al/Nb junctions, which had an extra Al layer. Based on these results we conclude that the Jc change is mainly caused by the change in junction resistance. A one order of magnitude smaller effect is caused by the superconductivity change. We believe the Jc change is caused by a Nb work function increase due to the hydrogen inclusion, resulting in an increase in barrier height.

Gap Junctions

PubMed Central

Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

2013-01-01

Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

Presence of claudins mRNA in the brain. Selective modulation of expression by kindling epilepsy.

PubMed

Lamas, Mónica; González-Mariscal, Lorenza; Gutiérrez, Rafael

2002-08-15

In the central nervous system, the junctional types that establish and maintain tissue architecture include gap junctions, for cytoplasmic connectivity, and tight junctions, for paracellular and/or cell polarity barriers. Connexins are the integral membrane proteins of gap junctions, whereas occludin and members of the multigene family of claudins form tight junctions. In the brain, there are no transendothelial pathways, as continuous tight junctions are present between the endothelial cells. Thus, they provide a continuous cellular barrier between the blood and the insterstitial fluid. However, several brain pathologies, including epilepsy, are known to alter the permeability of the blood-brain barrier and to cause edema. Therefore, since claudins, as constitutive proteins of tight junctions are likely candidates for modulation under pathological states, we explored their normal pattern of expression in the brain and its modulation by seizures. We found that several members of this family are normally expressed in the hippocampus and cortex. Interestingly, claudin-7 is expressed in the hippocampus but not in the cortex. On the other hand, the expression of claudin-8 is selectively down-regulated in the hippocampus as kindling evolves. These results link for the first time the modulation of expression of a tight junction protein to abnormal neuronal synchronization that could probably be reflected in permeability changes of the blood-brain barrier or edema.

Electrical transmission between mammalian neurons is supported by a small fraction of gap junction channels.

PubMed

Curti, Sebastian; Hoge, Gregory; Nagy, James I; Pereda, Alberto E

2012-06-01

Electrical synapses formed by gap junctions between neurons create networks of electrically coupled neurons in the mammalian brain, where these networks have been found to play important functional roles. In most cases, interneuronal gap junctions occur at remote dendro-dendritic contacts, making difficult accurate characterization of their physiological properties and correlation of these properties with their anatomical and morphological features of the gap junctions. In the mesencephalic trigeminal (MesV) nucleus where neurons are readily accessible for paired electrophysiological recordings in brain stem slices, our recent data indicate that electrical transmission between MesV neurons is mediated by connexin36 (Cx36)-containing gap junctions located at somato-somatic contacts. We here review evidence indicating that electrical transmission between these neurons is supported by a very small fraction of the gap junction channels present at cell-cell contacts. Acquisition of this evidence was enabled by the unprecedented experimental access of electrical synapses between MesV neurons, which allowed estimation of the average number of open channels mediating electrical coupling in relation to the average number of gap junction channels present at these contacts. Our results indicate that only a small proportion of channels (~0.1 %) appear to be conductive. On the basis of similarities with other preparations, we postulate that this phenomenon might constitute a general property of vertebrate electrical synapses, reflecting essential aspects of gap junction function and maintenance.

Variations in gap junctional intercellular communication and connexin expression in fibroblasts derived from keloid and hypertrophic scars.

PubMed

Lu, Feng; Gao, JianHua; Ogawa, Rei; Hyakusoku, Hiko

2007-03-01

Expression of connexins and other constituent proteins of gap junctions along with gap junctional intercellular communication are involved in cellular development and differentiation processes. In addition, an increasing number of hereditary skin disorders appear to be linked to connexins. Therefore, in this report, the authors studied in vitro gap junctional intercellular communication function and connexin expression in fibroblasts derived from keloid and hypertrophic scar patients. Fibroblasts harvested from each of six keloid and hypertrophic scar patients were used for this study. Gap junctional intercellular communication function was investigated using the gap fluorescence recovery after photobleaching method, and expression of connexin proteins was studied using quantitative confocal microscopic analyses. Compared with normal skin, a decreased level of gap junctional intercellular communication was seen in fibroblasts derived from hypertrophic scar tissue, whereas an extremely low gap junctional intercellular communication level was detected in fibroblasts derived from keloid tissue. We also detected little connexin 43 (Cx43) protein localized in fibroblasts derived from keloids. Moreover, Cx43 protein levels were much lower in fibroblasts derived from hypertrophic scars than in those derived from normal skin. The authors' data suggest that the loss of gap junctional intercellular communication and connexin expression may affect intercellular recognition and thus break the proliferation and apoptosis balance in fibroblasts derived from keloid and hypertrophic scar tissue.

Humidity dependence of molecular tunnel junctions with an AlOx/COOH- interface

NASA Astrophysics Data System (ADS)

Zhang, Xiaohang; McGill, Stephen; Xiong, Peng

2006-03-01

We have studied the electron transport in planar tunneling junctions with aluminum oxide and an organic self-assembled monolayer (SAM) as the tunnel barrier. The structure of the junctions is Al/AlOx/SAM/(Au, Pb) with a junction area of ˜ 0.4mm^2. The organic molecules investigated include mercaptohexadecanoic acid (MHA), hexadecanoic acid (HDA), and octadecyltrichlorosilane (OTS); all of which form ordered SAMs on top of aluminum oxide. The use of a superconducting electrode (Al) enables us to determine unambiguously that these are high-quality tunnel junctions. For junctions incorporating MHA, the transport behavior is found to be strongly humidity dependent. The resistance of these junctions drops more than 50% when placed in dry nitrogen and recovers when returned into the ambient. The same drop also occurs when the sample is placed into a vacuum, and backfilling the vacuum with either dry N2 or O2 has negligible effect on the resistance. For comparison, junctions with HDA show the same humidity dependence, while OTS samples do not. Since both MHA and HDA have carboxylic groups and OTS does not, the results suggest that water molecules at the AlOx/COOH- interface play the central role in the observed behavior. Inelastic tunneling spectroscopy (IETS) has also been performed to understand the role of water. This work was supported by a FSU Research Foundation PEG grant.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F; Steiner, Myles A; Jain, Nikhil

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAsmore » to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.« less

Changes in intestinal tight junction permeability associated with industrial food additives explain the rising incidence of autoimmune disease.

PubMed

Lerner, Aaron; Matthias, Torsten

2015-06-01

The incidence of autoimmune diseases is increasing along with the expansion of industrial food processing and food additive consumption. The intestinal epithelial barrier, with its intercellular tight junction, controls the equilibrium between tolerance and immunity to non-self-antigens. As a result, particular attention is being placed on the role of tight junction dysfunction in the pathogenesis of AD. Tight junction leakage is enhanced by many luminal components, commonly used industrial food additives being some of them. Glucose, salt, emulsifiers, organic solvents, gluten, microbial transglutaminase, and nanoparticles are extensively and increasingly used by the food industry, claim the manufacturers, to improve the qualities of food. However, all of the aforementioned additives increase intestinal permeability by breaching the integrity of tight junction paracellular transfer. In fact, tight junction dysfunction is common in multiple autoimmune diseases and the central part played by the tight junction in autoimmune diseases pathogenesis is extensively described. It is hypothesized that commonly used industrial food additives abrogate human epithelial barrier function, thus, increasing intestinal permeability through the opened tight junction, resulting in entry of foreign immunogenic antigens and activation of the autoimmune cascade. Future research on food additives exposure-intestinal permeability-autoimmunity interplay will enhance our knowledge of the common mechanisms associated with autoimmune progression. Copyright © 2015. Published by Elsevier B.V.

AII amacrine cells discriminate between heterocellular and homocellular locations when assembling connexin36-containing gap junctions

PubMed Central

Meyer, Arndt; Hilgen, Gerrit; Dorgau, Birthe; Sammler, Esther M.; Weiler, Reto; Monyer, Hannah; Dedek, Karin; Hormuzdi, Sheriar G.

2014-01-01

ABSTRACT Electrical synapses (gap junctions) rapidly transmit signals between neurons and are composed of connexins. In neurons, connexin36 (Cx36) is the most abundant isoform; however, the mechanisms underlying formation of Cx36-containing electrical synapses are unknown. We focus on homocellular and heterocellular gap junctions formed by an AII amacrine cell, a key interneuron found in all mammalian retinas. In mice lacking native Cx36 but expressing a variant tagged with enhanced green fluorescent protein at the C-terminus (KO-Cx36-EGFP), heterocellular gap junctions formed between AII cells and ON cone bipolar cells are fully functional, whereas homocellular gap junctions between two AII cells are not formed. A tracer injected into an AII amacrine cell spreads into ON cone bipolar cells but is excluded from other AII cells. Reconstruction of Cx36–EGFP clusters on an AII cell in the KO-Cx36-EGFP genotype confirmed that the number, but not average size, of the clusters is reduced – as expected for AII cells lacking a subset of electrical synapses. Our studies indicate that some neurons exhibit at least two discriminatory mechanisms for assembling Cx36. We suggest that employing different gap-junction-forming mechanisms could provide the means for a cell to regulate its gap junctions in a target-cell-specific manner, even if these junctions contain the same connexin. PMID:24463820

The lateral mobility of cell adhesion molecules is highly restricted at septate junctions in Drosophila.

PubMed

Laval, Monique; Bel, Christophe; Faivre-Sarrailh, Catherine

2008-07-18

A complex of three cell adhesion molecules (CAMs) Neurexin IV(Nrx IV), Contactin (Cont) and Neuroglian (Nrg) is implicated in the formation of septate junctions between epithelial cells in Drosophila. These CAMs are interdependent for their localization at septate junctions and e.g. null mutation of nrx IV or cont induces the mislocalization of Nrg to the baso-lateral membrane. These mutations also result in ultrastructural alteration of the strands of septate junctions and breakdown of the paracellular barrier. Varicose (Vari) and Coracle (Cora), that both interact with the cytoplasmic tail of Nrx IV, are scaffolding molecules required for the formation of septate junctions. We conducted photobleaching experiments on whole living Drosophila embryos to analyze the membrane mobility of CAMs at septate junctions between epithelial cells. We show that GFP-tagged Nrg and Nrx IV molecules exhibit very stable association with septate junctions in wild-type embryos. Nrg-GFP is mislocalized to the baso-lateral membrane in nrx IV or cont null mutant embryos, and displays increased mobile fraction. Similarly, Nrx IV-GFP becomes distributed to the baso-lateral membrane in null mutants of vari and cora, and its mobile fraction is strongly increased. The loss of Vari, a MAGUK protein that interacts with the cytoplasmic tail of Nrx IV, has a stronger effect than the null mutation of nrx IV on the lateral mobility of Nrg-GFP. The strands of septate junctions display a stable behavior in vivo that may be correlated with their role of paracellular barrier. The membrane mobility of CAMs is strongly limited when they take part to the multimolecular complex forming septate junctions. This restricted lateral diffusion of CAMs depends on both adhesive interactions and clustering by scaffolding molecules. The lateral mobility of CAMs is strongly increased in embryos presenting alteration of septate junctions. The stronger effect of vari by comparison with nrx IV null mutation supports the hypothesis that this scaffolding molecule may cross-link different types of CAMs and play a crucial role in stabilizing the strands of septate junctions.

The Jigsaw Earth--Putting the Pieces Together.

ERIC Educational Resources Information Center

Glenn, William H.

1983-01-01

Discusses continental drift, sea floor spreading, evidence for these two geological phenomena, and how they were unified into a theory of plate tectonics. Also discusses three types of plate boundaries: (1) divergent junctions, (2) convergent junctions, and (3) shear junctions. (Author/JN)

76 FR 64134 - Post Office Closing

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-17

... POSTAL REGULATORY COMMISSION [Docket No. A2012-5; Order No. 901] Post Office Closing AGENCY... the closing of the Conception Junction, Missouri post office has been filed. It identifies preliminary... Postal Service's determination to close the Conception Junction post office in Conception Junction...

Pseudomonas aeruginosa elastase causes transient disruption of tight junctions and downregulation of PAR-2 in human nasal epithelial cells.

PubMed

Nomura, Kazuaki; Obata, Kazufumi; Keira, Takashi; Miyata, Ryo; Hirakawa, Satoshi; Takano, Ken-ichi; Kohno, Takayuki; Sawada, Norimasa; Himi, Tetsuo; Kojima, Takashi

2014-02-18

Pseudomonas aeruginosa causes chronic respiratory disease, and the elastase enzyme that it produces increases the permeability of airway epithelial cells owing to the disruption of tight junctions. P. aeruginosa is also implicated in prolonged chronic rhinosinusitis. However, the effects of P. aeruginosa elastase (PE) against the barrier formed by human nasal epithelial cells (HNECs) remain unknown. To investigate the mechanisms involved in the disruption of tight junctions by PE in HNECs, primary cultures of HNECs transfected with human telomerase reverse transcriptase (hTERT-HNECs) were used. The hTERT-HNECs were pretreated with inhibitors of various signal transduction pathways, PKC, MAPK, p38MAPK, PI3K, JNK, NF-κB, EGF receptor, proteasome, COX1 and COX2 before treatment with PE. Some cells were pretreated with siRNA and agonist of protease activated receptor-2 (PAR-2) before treatment with PE. Expression and structures of tight junctions were determined by Western blotting, real-time PCR, immunostaining and freeze-fracture. Transepithelial electrical resistance (TER) was examined as the epithelial barrier function. PE treatment transiently disrupted the epithelial barrier and downregulated the transmembrane proteins claudin-1 and -4, occludin, and tricellulin, but not the scaffold PDZ-expression proteins ZO-1 and -2 and adherens junction proteins E-cadherin and β-catenin. The transient downregulation of tight junction proteins was controlled via distinct signal transduction pathways such as the PKC, MAPK, PI3K, p38 MAPK, JNK, COX-1 and -2, and NF-κB pathways. Furthermore, treatment with PE transiently decreased PAR-2 expression, which also regulated the expression of the tight junction proteins. Treatment with a PAR-2 agonist prevented the downregulation of the tight junction proteins after PE treatment in HNECs. PE transiently disrupts tight junctions in HNECs and downregulates PAR-2. The transient disruption of tight junctions by PE might occur repeatedly during chronic rhinosinusitis.

Pseudomonas aeruginosa elastase causes transient disruption of tight junctions and downregulation of PAR-2 in human nasal epithelial cells

PubMed Central

2014-01-01

Background Pseudomonas aeruginosa causes chronic respiratory disease, and the elastase enzyme that it produces increases the permeability of airway epithelial cells owing to the disruption of tight junctions. P. aeruginosa is also implicated in prolonged chronic rhinosinusitis. However, the effects of P. aeruginosa elastase (PE) against the barrier formed by human nasal epithelial cells (HNECs) remain unknown. Methods To investigate the mechanisms involved in the disruption of tight junctions by PE in HNECs, primary cultures of HNECs transfected with human telomerase reverse transcriptase (hTERT-HNECs) were used. The hTERT-HNECs were pretreated with inhibitors of various signal transduction pathways, PKC, MAPK, p38MAPK, PI3K, JNK, NF-κB, EGF receptor, proteasome, COX1 and COX2 before treatment with PE. Some cells were pretreated with siRNA and agonist of protease activated receptor-2 (PAR-2) before treatment with PE. Expression and structures of tight junctions were determined by Western blotting, real-time PCR, immunostaining and freeze-fracture. Transepithelial electrical resistance (TER) was examined as the epithelial barrier function. Results PE treatment transiently disrupted the epithelial barrier and downregulated the transmembrane proteins claudin-1 and -4, occludin, and tricellulin, but not the scaffold PDZ-expression proteins ZO-1 and -2 and adherens junction proteins E-cadherin and β-catenin. The transient downregulation of tight junction proteins was controlled via distinct signal transduction pathways such as the PKC, MAPK, PI3K, p38 MAPK, JNK, COX-1 and -2, and NF-κB pathways. Furthermore, treatment with PE transiently decreased PAR-2 expression, which also regulated the expression of the tight junction proteins. Treatment with a PAR-2 agonist prevented the downregulation of the tight junction proteins after PE treatment in HNECs. Conclusions PE transiently disrupts tight junctions in HNECs and downregulates PAR-2. The transient disruption of tight junctions by PE might occur repeatedly during chronic rhinosinusitis. PMID:24548792

Ultrastructural localization of connexins (Cx36, Cx43, Cx45), glutamate receptors and aquaporin-4 in rodent olfactory mucosa, olfactory nerve and olfactory bulb

PubMed Central

RASH, JOHN E.; DAVIDSON, KIMBERLY G. V.; KAMASAWA, NAOMI; YASUMURA, THOMAS; KAMASAWA, MASAMI; ZHANG, CHUNBO; MICHAELS, ROBIN; RESTREPO, DIEGO; OTTERSEN, OLE P.; OLSON, CARL O.; NAGY, JAMES I.

2006-01-01

Odorant/receptor binding and initial olfactory information processing occurs in olfactory receptor neurons (ORNs) within the olfactory epithelium. Subsequent information coding involves high-frequency spike synchronization of paired mitral/tufted cell dendrites within olfactory bulb (OB) glomeruli via positive feedback between glutamate receptors and closely-associated gap junctions. With mRNA for connexins Cx36, Cx43 and Cx45 detected within ORN somata and Cx36 and Cx43 proteins reported in ORN somata and axons, abundant gap junctions were proposed to couple ORNs. We used freeze-fracture replica immunogold labeling (FRIL) and confocal immunofluorescence microscopy to examine Cx36, Cx43 and Cx45 protein in gap junctions in olfactory mucosa, olfactory nerve and OB in adult rats and mice and early postnatal rats. In olfactory mucosa, Cx43 was detected in gap junctions between virtually all intrinsic cell types except ORNs and basal cells; whereas Cx45 was restricted to gap junctions in sustentacular cells. ORN axons contained neither gap junctions nor any of the three connexins. In OB, Cx43 was detected in homologous gap junctions between almost all cell types except neurons and oligodendrocytes. Cx36 and, less abundantly, Cx45 were present in neuronal gap junctions, primarily at “mixed” glutamatergic/electrical synapses between presumptive mitral/tufted cell dendrites. Genomic analysis revealed multiple miRNA (micro interfering RNA) binding sequences in 3′-untranslated regions of Cx36, Cx43 and Cx45 genes, consistent with cell-type-specific post-transcriptional regulation of connexin synthesis. Our data confirm absence of gap junctions between ORNs, and support Cx36- and Cx45-containing gap junctions at glutamatergic mixed synapses between mitral/tufted cells as contributing to higher-order information coding within OB glomeruli. PMID:16841170

Bioglass promotes wound healing by affecting gap junction connexin 43 mediated endothelial cell behavior.

PubMed

Li, Haiyan; He, Jin; Yu, Hongfei; Green, Colin R; Chang, Jiang

2016-04-01

It is well known that gap junctions play an important role in wound healing, and bioactive glass (BG) has been shown to help healing when applied as a wound dressing. However, the effects of BG on gap junctional communication between cells involved in wound healing is not well understood. We hypothesized that BG may be able to affect gap junction mediated cell behavior to enhance wound healing. Therefore, we set out to investigate the effects of BG on gap junction related behavior of endothelial cells in order to elucidate the mechanisms through which BG is operating. In in vitro studies, BG ion extracts prevented death of human umbilical vein endothelial cells (HUVEC) following hypoxia in a dose dependent manner, possibly through connexin hemichannel modulation. In addition, BG showed stimulatory effects on gap junction communication between HUVECs and upregulated connexin43 (Cx43) expression. Furthermore, BG prompted expression of vascular endothelial growth factor and basic fibroblast growth factor as well as their receptors, and vascular endothelial cadherin in HUVECs, all of which are beneficial for vascularization. In vivo wound healing results showed that the wound closure of full-thickness excisional wounds of rats was accelerated by BG with reduced inflammation during initial stages of healing and stimulated angiogenesis during the proliferation stage. Therefore, BG can stimulate wound healing through affecting gap junctions and gap junction related endothelial cell behaviors, including prevention of endothelial cell death following hypoxia, stimulation of gap junction communication and upregulation of critical vascular growth factors, which contributes to the enhancement of angiogenesis in the wound bed and finally to accelerate wound healing. Although many studies have reported that BG stimulates angiogenesis and wound healing, this work reveals the relationship between BG and gap junction connexin 43 mediated endothelial cell behavior and elucidates one of the possible mechanisms through which BG stimulates wound healing. Copyright © 2016 Elsevier Ltd. All rights reserved.

The role of the baryon junction in relativistic heavy-ion collisions

NASA Astrophysics Data System (ADS)

Vance, Stephen Earl

The non-perturbative nature of the conserved baryon number of nuclei is investigated by studying the role of the baryon junction in relativistic heavy-ion collisions. The junction, J, of a baryon originates in the Standard Model of Strong Interactions (QCD) and is the vertex which connects the color flux (Wilson) lines flowing from the three valence quarks. In high energy interactions, the baryon junction can play a dynamical role through the Regge exchange of junction states. We show that the junction exchange provides a natural mechanism for the transport of baryon number into the central rapidity region and has the remarkable ability to produce valence hyperons, including W- baryons. This mechanism is used to describe the observed baryon stopping and associated hyperon production in nucleus-nucleus collisions at the CERN SPS. We also show that junction - antijunction excitations or JJ loops provide a new mechanism for baryon pair production and lead to enhanced hyperon and antihyperon production. The combination of these two mechanisms is able to explain part of the anomalous hyperon production observed in Pb + Pb collisions at the SPS. Using the junction initial state dynamics, final state strangeness exchange interactions are shown to further enhance hyperon production and are proposed as an explanation of the remaining anomalous hyperon production. With larger phase space (higher energy) accessible at the newly constructed BNL RHIC facility, we propose that the observation of valence W- baryons in pp collisions will be a decisive observable to confirm the junction exchange picture of baryon number transport. In addition, we note that novel rapidity correlations between baryons and antibaryons of completely different quark flavors, like D++(uuu) and W+( ss s) , are predicted by the JJ loop mechanism. For numerical calculations of multiparticle observables associated with these junction mechanisms, we developed the HIJING/BB¯ nuclear event generator. HIJING/BB¯ was then coupled to the General Cascade Program (GCP) to study the role of the final state flavor changing interactions.

Polarity Proteins as Regulators of Cell Junction Complexes: Implications for Breast Cancer

PubMed Central

Bazzoun, Dana; Lelièvre, Sophie; Talhouk, Rabih

2013-01-01

The epithelium of multicellular organisms possesses a well-defined architecture, referred to as polarity that coordinates the regulation of essential cell features. Polarity proteins are intimately linked to the protein complexes that make the tight, adherens and gap junctions; they contribute to the proper localization and assembly of these cell-cell junctions within cells and consequently to functional tissue organization. The establishment of cell-cell junctions and polarity are both implicated in the regulation of epithelial modifications in normal and cancer situations. Uncovering the mechanisms through which cell-cell junctions and epithelial polarization are established and how their interaction with the microenvironment direct cell and tissue organization has opened new venues for the development of cancer therapies. In this review, we focus on the breast epithelium to highlight how polarity and cell-cell junction proteins interact together in normal and cancerous contexts to regulate major cellular mechanisms such as migration. The impact of these proteins on epigenetic mechanisms responsible for resetting cells towards oncogenesis is discussed in light of increasing evidence that tissue polarity modulates chromatin function. Finally, we give an overview of recent breast cancer therapies that target proteins involved in cell-cell junctions. PMID:23458609

Gap junctions on hippocampal mossy fiber axons demonstrated by thin-section electron microscopy and freeze–fracture replica immunogold labeling

PubMed Central

Hamzei-Sichani, Farid; Kamasawa, Naomi; Janssen, William G. M.; Yasumura, Thomas; Davidson, Kimberly G. V.; Hof, Patrick R.; Wearne, Susan L.; Stewart, Mark G.; Young, Steven R.; Whittington, Miles A.; Rash, John E.; Traub, Roger D.

2007-01-01

Gap junctions have been postulated to exist between the axons of excitatory cortical neurons based on electrophysiological, modeling, and dye-coupling data. Here, we provide ultrastructural evidence for axoaxonic gap junctions in dentate granule cells. Using combined confocal laser scanning microscopy, thin-section transmission electron microscopy, and grid-mapped freeze–fracture replica immunogold labeling, 10 close appositions revealing axoaxonic gap junctions (≈30–70 nm in diameter) were found between pairs of mossy fiber axons (≈100–200 nm in diameter) in the stratum lucidum of the CA3b field of the rat ventral hippocampus, and one axonal gap junction (≈100 connexons) was found on a mossy fiber axon in the CA3c field of the rat dorsal hippocampus. Immunogold labeling with two sizes of gold beads revealed that connexin36 was present in that axonal gap junction. These ultrastructural data support computer modeling and in vitro electrophysiological data suggesting that axoaxonic gap junctions play an important role in the generation of very fast (>70 Hz) network oscillations and in the hypersynchronous electrical activity of epilepsy. PMID:17640909

Aberrant Cx43 Expression and Mislocalization in Metastatic Human Melanomas.

PubMed

Alaga, Katanya C; Crawford, Melissa; Dagnino, Lina; Laird, Dale W

2017-01-01

At present, it is unclear if melanocytes contain Cx43 gap junctions and whether Cx43 expression is regulated in melanoma onset and progression. To this end, we cultured pure populations of mouse melanocytes and found that they had no detectable Cx43 and exhibited an inability for dye transfer indicating they were devoid of functional gap junctions. Given the evidence that melanomas acquire the expression of other connexin isoforms during tumor progression, we assessed if Cx43 was also expressed and assembled into gap junctions at any stage of human melanoma onset and progression to distant metastases. Nearly all primary melanomas within the epidermis lacked Cx43. In contrast, nodal metastases expressed low levels of Cx43 which was markedly higher in distant metastases that had invaded vital organs. Importantly, in all stages of melanoma progression, Cx43 could be detected in intracellular compartments but was rarely assembled into gap junctions indicative of functional gap junction channels. Overall, these studies suggest that melanocytes do not form Cx43 homocellular gap junctions and even though Cx43 levels increase during melanoma progression, this connexin rarely assembles into gap junction structures.

Aberrant Cx43 Expression and Mislocalization in Metastatic Human Melanomas

PubMed Central

Alaga, Katanya C.; Crawford, Melissa; Dagnino, Lina; Laird, Dale W.

2017-01-01

At present, it is unclear if melanocytes contain Cx43 gap junctions and whether Cx43 expression is regulated in melanoma onset and progression. To this end, we cultured pure populations of mouse melanocytes and found that they had no detectable Cx43 and exhibited an inability for dye transfer indicating they were devoid of functional gap junctions. Given the evidence that melanomas acquire the expression of other connexin isoforms during tumor progression, we assessed if Cx43 was also expressed and assembled into gap junctions at any stage of human melanoma onset and progression to distant metastases. Nearly all primary melanomas within the epidermis lacked Cx43. In contrast, nodal metastases expressed low levels of Cx43 which was markedly higher in distant metastases that had invaded vital organs. Importantly, in all stages of melanoma progression, Cx43 could be detected in intracellular compartments but was rarely assembled into gap junctions indicative of functional gap junction channels. Overall, these studies suggest that melanocytes do not form Cx43 homocellular gap junctions and even though Cx43 levels increase during melanoma progression, this connexin rarely assembles into gap junction structures. PMID:28607585

Method and apparatus for reducing sample dispersion in turns and junctions of microchannel systems

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.

2001-01-01

The performance of microchannel devices is improved by providing turns, wyes, tees, and other junctions that produce little dispersions of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. A numerical algorithm was employed to evolve low-dispersion geometries by computing the electric or pressure field within candidate configurations, sample transport through the turn or junction, and the overall effective dispersion. These devices should greatly increase flexibility in the design of microchannel devices by permitting the use of turns and junctions that do not induce large sample dispersion. In particular, the ability to fold electrophoretic and electrochrornatographic separation columns will allow dramatic improvements in the miniaturization of these devices. The low-lispersion devices are particularly suited to electrochromatographic and electrophoretic separations, as well as pressure-driven chromatographic separation. They are further applicable to microfluidic systems employing either electroosrnotic or pressure-driven flows for sample transport, reaction, mixing, dilution or synthesis.

Dbl3 drives Cdc42 signaling at the apical margin to regulate junction position and apical differentiation

PubMed Central

Zihni, Ceniz; Munro, Peter M.G.; Elbediwy, Ahmed; Keep, Nicholas H.; Terry, Stephen J.; Harris, John

2014-01-01

Epithelial cells develop morphologically characteristic apical domains that are bordered by tight junctions, the apical–lateral border. Cdc42 and its effector complex Par6–atypical protein kinase c (aPKC) regulate multiple steps during epithelial differentiation, but the mechanisms that mediate process-specific activation of Cdc42 to drive apical morphogenesis and activate the transition from junction formation to apical differentiation are poorly understood. Using a small interfering RNA screen, we identify Dbl3 as a guanine nucleotide exchange factor that is recruited by ezrin to the apical membrane, that is enriched at a marginal zone apical to tight junctions, and that drives spatially restricted Cdc42 activation, promoting apical differentiation. Dbl3 depletion did not affect junction formation but did affect epithelial morphogenesis and brush border formation. Conversely, expression of active Dbl3 drove process-specific activation of the Par6–aPKC pathway, stimulating the transition from junction formation to apical differentiation and domain expansion, as well as the positioning of tight junctions. Thus, Dbl3 drives Cdc42 signaling at the apical margin to regulate morphogenesis, apical–lateral border positioning, and apical differentiation. PMID:24379416