Electron impact ionization of plasma important SiClX (X = 1-4) molecules: theoretical cross sections

NASA Astrophysics Data System (ADS)

Kothari, Harshit N.; Pandya, Siddharth H.; Joshipura, K. N.

2011-06-01

Electron impact ionization of SiClX (X = 1-4) molecules is less studied but an important process for understanding and modelling the interactions of silicon-chlorine plasmas with different materials. The SiCl3 radical is a major chloro-silicon species involved in the CVD (chemical vapour deposition) of silicon films from SiCl4/Ar microwave plasmas. We report in this paper the total ionization cross sections for electron collisions on these silicon compounds at incident energies from the ionization threshold to 2000 eV. We employ the 'complex scattering potential-ionization contribution' method and identify the relative importance of various channels, with ionization included in the cumulative inelastic scattering. New results are also presented on these exotic molecular targets. This work is significant in view of the paucity of theoretical studies on the radicals SiClX (X = 1-3) and on SiCl4.

Fusion of deformed nuclei in the reactions of 76Ge+150Nd and 28Si+198Pt at the Coulomb barrier region

NASA Astrophysics Data System (ADS)

Nishio, K.; Ikezoe, H.; Mitsuoka, S.; Lu, J.

2000-07-01

Evaporation residue cross sections for 28Si+198Pt and 76Ge+150Nd, both of which form a compound nucleus 226U, were measured in the vicinity of the Coulomb barrier. The measurement gives direct evidence that the system really fuses together to form a fully equilibrated compound nucleus. For the 28Si+198Pt reaction, we have measured the fission fragments to determine the fusion cross section by taking advantage of the highly fissile character of 226U. The evaporation residue cross section and the fusion cross section for 28Si+198Pt allowed us to investigate the deexcitation process (exit channel) of the compound nucleus 226U, and the parameters entering in a statistical model calculation could be determined. By estimating the deexcitation of the compound nucleus 226U with the statistical model, the effect of the deformed nucleus 150Nd on the fusion reaction 76Ge+150Nd was extracted. The experimental data indicated that there is more than 13 MeV extra-extra-push energy for the system to fuse together when the projectile 76Ge collides at the tip of the deformed 150Nd nucleus. On the contrary, for the side collision which is more compact in configuration than the tip collision, no fusion hindrance is suggested.

Neutron elastic and inelastic cross section measurements for 28Si

NASA Astrophysics Data System (ADS)

Derdeyn, E. C.; Lyons, E. M.; Morin, T.; Hicks, S. F.; Vanhoy, J. R.; Peters, E. E.; Ramirez, A. P. D.; McEllistrem, M. T.; Mukhopadhyay, S.; Yates, S. W.

2017-09-01

Neutron elastic and inelastic cross sections are critical for design and implementation of nuclear reactors and reactor equipment. Silicon, an element used abundantly in fuel pellets as well as building materials, has little to no experimental cross sections in the fast neutron region to support current theoretical evaluations, and thus would benefit from any contribution. Measurements of neutron elastic and inelastic differential scattering cross sections for 28Si were performed at the University of Kentucky Accelerator Laboratory for incident neutron energies of 6.1 MeV and 7.0 MeV. Neutrons were produced by accelerated deuterons incident on a deuterium gas cell. These nearly mono-energetic neutrons then scattered off a natural Si sample and were detected using liquid deuterated benzene scintillation detectors. Scattered neutron energy was deduced using time-of-flight techniques in tandem with kinematic calculations for an angular distribution. The relative detector efficiency was experimentally determined over a neutron energy range from approximately 0.5 to 7.75 MeV prior to the experiment. Yields were corrected for multiple scattering and neutron attenuation in the sample using the forced-collision Monte Carlo correction code MULCAT. Resulting cross sections will be presented along with comparisons to various data evaluations. Research is supported by USDOE-NNSA-SSAP: NA0002931, NSF: PHY-1606890, and the Donald A. Cowan Physics Institute at the University of Dallas.

TEM study of {beta} Prime precipitate interaction mechanisms with dislocations and {beta} Prime interfaces with the aluminium matrix in Al-Mg-Si alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teichmann, Katharina; Marioara, Calin D.; Andersen, Sigmund J.

The interaction mechanisms between dislocations and semi-coherent, needle-shaped {beta} Prime precipitates in Al-Mg-Si alloys have been studied by High Resolution Transmission Electron Microscopy (HRTEM). Dislocation loops appearing as broad contrast rings around the precipitate cross-sections were identified in the Al matrix. A size dependency of the interaction mechanism was observed; the precipitates were sheared when the longest dimension of their cross-section was shorter than approximately 15 nm, and looped otherwise. A more narrow ring located between the Al matrix and bulk {beta} Prime indicates the presence of a transition interface layer. Together with the bulk {beta} Prime structure, this wasmore » further investigated by High Angle Annular Dark Field Scanning TEM (HAADF-STEM). In the bulk {beta} Prime a higher intensity could be correlated with a third of the Si-columns, as predicted from the published structure. The transition layer incorporates Si columns in the same arrangement as in bulk {beta} Prime , although it is structurally distinct from it. The Z-contrast information and arrangement of these Si-columns demonstrate that they are an extension of the Si-network known to structurally connect all the precipitate phases in the Al-Mg-Si(-Cu) system. The width of the interface layer was estimated to about 1 nm. - Highlights: Black-Right-Pointing-Pointer {beta} Prime is found to be looped at sizes larger than 15 nm (cross section diameter). Black-Right-Pointing-Pointer {beta} Prime is found to be sheared at sizes smaller than 15 nm (cross section diameter). Black-Right-Pointing-Pointer The recently determined crystal structure of {beta} Prime is confirmed by HAADF-STEM. Black-Right-Pointing-Pointer Between {beta} Prime and the Al-matrix a transition layer of about 1 nm is existent. Black-Right-Pointing-Pointer The {beta} Prime /matrix layer is structurally distinct from bulk {beta} Prime and the aluminium matrix.« less

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

PubMed

Habicht, S; Zhao, Q T; Feste, S F; Knoll, L; Trellenkamp, S; Ghyselen, B; Mantl, S

2010-03-12

We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.

Macrosegregation Due to Convection in Al-19Cu Alloy Directionally Solidified Through an Abrupt Expansion in Cross-Section: A Comparison with Al-7Si

NASA Astrophysics Data System (ADS)

Ghods, M.; Lauer, M.; Grugel, R. N.; Tewari, S. N.; Poirier, D. R.

2017-10-01

Hypoeutectic Al-19 wt.% Cu alloys were directionally solidified at two different growth speeds in cylindrical molds that featured an abrupt increase in cross-section, from 3.2 to 9.5 mm in diameter. The effects of thermosolutal convection and shrinkage flow induced by the cross-section change on macrosegregation were investigated. Dendrite clustering and extensive radial macrosegregation were seen, particularly in the larger cross-section after expansion. Negative longitudinal macrosegregation right after the cross-section increase was observed; the extent of macrosegregation, however, decreases with increasing growth speed. Both thermal and flow effects due to cross-section change were seen to influence the radial macrosegregation immediately before, and after the expansion. Radial macrosegregation pattern was found to be changing as the mushy zone enters the larger cross-section region above the cross-section change where the solidification is in its unsteady state. The effect of the solutal expansion coefficient on macrosegregation was studied by comparing the degree of thermosolutal convection in Al-19 wt.% Cu with a previous study in which we investigated Al-7 wt.% Si. A two-dimensional model accounting for both shrinkage and thermosolutal convection was used to simulate the resulting steepling, as well as the axial and radial macrosegregation. The experimentally observed macrosegregation associated with the expansion during directional solidification is well predicted by the numerical simulations.

Silicon Promotes Exodermal Casparian Band Formation in Si-Accumulating and Si-Excluding Species by Forming Phenol Complexes

PubMed Central

Hinrichs, Martin; Specht, André; Waßmann, Friedrich; Schreiber, Lukas; Schenk, Manfred K.

2015-01-01

We studied the effect of Silicon (Si) on Casparian band (CB) development, chemical composition of the exodermal CB and Si deposition across the root in the Si accumulators rice and maize and the Si non-accumulator onion. Plants were cultivated in nutrient solution with and without Si supply. The CB development was determined in stained root cross-sections. The outer part of the roots containing the exodermis was isolated after enzymatic treatment. The exodermal suberin was transesterified with MeOH/BF3 and the chemical composition was measured using gas chromatography-mass spectroscopy (GC-MS) and flame ionization detector (GC-FID). Laser ablation-inductively coupled plasma-mass spectroscopy (LA-ICP-MS) was used to determine the Si deposition across root cross sections. Si promoted CB formation in the roots of Si-accumulator and Si non-accumulator species. The exodermal suberin was decreased in rice and maize due to decreased amounts of aromatic suberin fractions. Si did not affect the concentration of lignin and lignin-like polymers in the outer part of rice, maize and onion roots. The highest Si depositions were found in the tissues containing CB. These data along with literature were used to suggest a mechanism how Si promotes the CB development by forming complexes with phenols. PMID:26383862

Defect formation in MeV H+ implanted GaN and 4H-SiC investigated by cross-sectional Raman spectroscopy

NASA Astrophysics Data System (ADS)

Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Shibin; Lin, Jiajie; Zhang, Runchun; Zhou, Min; Yu, Wenjie; Zhang, Bo; Ou, Xin; Wang, Xi

2017-09-01

Cross-sectional Raman spectroscopy is used to characterize the defect formation and the defect recovery in MeV H+ implanted bulk GaN and 4H-SiC in the high energy MeV ion-cut process. The Raman intensity decreases but the forbidden modes are activated at the damage region, and the intensity decrease is proportional to the damage level. The Raman spectrum is quite sensitive to detect the damage recovery after annealing. The main peak intensity increases and the forbidden mode disappears in both annealed GaN and 4H-SiC samples. The Raman spectra of GaN samples annealed at different temperatures suggest that higher annealing temperature is more efficient for damage recovery. While, the Raman spectra of SiC indicate that higher implantation temperature results in heavier lattice damage and other polytype clusters might be generated by high annealing temperature in the annealed SiC samples. The cross-sectional Raman spectroscopy is a straightforward method to characterize lattice damage and damage recovery in high energy ion-cut process. It can serve as a fast supplementary measurement technique to Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) and transmission electron microscope (TEM) for the defect characterizations.

Ab initio density functional theory investigation of crystalline bundles of polygonized single-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2008-11-01

By using ab initio density functional theory, the structural characterizations and electronic properties of two large-diameter (13, 13) and (14, 14) armchair silicon carbide nanotube (SiCNT) bundles are investigated. Full structural optimizations show that the cross sections of these large-diameter SiCNTs in the bundles have a nearly hexagonal shape. The effects of inter-tube coupling on the electronic dispersions of large-diameter SiCNT bundles are demonstrated. By comparing the band structures of the triangular lattices of (14, 14) SiCNTs with nearly hexagonal and circular cross sections we found that the polygonization of the tubes in the bundle leads to a further dispersion of the occupied bands and an increase in the bandgap by 0.18 eV.

Ab initio density functional theory investigation of crystalline bundles of polygonized single-walled silicon carbide nanotubes.

PubMed

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2008-11-19

By using ab initio density functional theory, the structural characterizations and electronic properties of two large-diameter (13, 13) and (14, 14) armchair silicon carbide nanotube (SiCNT) bundles are investigated. Full structural optimizations show that the cross sections of these large-diameter SiCNTs in the bundles have a nearly hexagonal shape. The effects of inter-tube coupling on the electronic dispersions of large-diameter SiCNT bundles are demonstrated. By comparing the band structures of the triangular lattices of (14, 14) SiCNTs with nearly hexagonal and circular cross sections we found that the polygonization of the tubes in the bundle leads to a further dispersion of the occupied bands and an increase in the bandgap by 0.18 eV.

Effects of silicon cross section and neutron spectrum on the radial uniformity in neutron transmutation doping.

PubMed

Kim, Haksung; Ho Pyeon, Cheol; Lim, Jae-Yong; Misawa, Tsuyoshi

2012-01-01

The effects of silicon cross section and neutron spectrum on the radial uniformity of a Si-ingot are examined experimentally with various neutron spectrum conditions. For the cross section effect, the numerical results using silicon single crystal cross section reveal good agreements with experiments within relative difference of 6%, whereas the discrepancy is approximately 20% in free-gas cross section. For the neutron spectrum effect, the radial uniformity in hard neutron spectrum is found to be more flattening than that in soft spectrum. Copyright © 2011 Elsevier Ltd. All rights reserved.

Two-Dimensional Nonlinear Finite Element Analysis of CMC Microstructures

NASA Technical Reports Server (NTRS)

Mital, Subodh K.; Goldberg, Robert K.; Bonacuse, Peter J.

2011-01-01

Detailed two-dimensional finite element analyses of the cross-sections of a model CVI (chemical vapor infiltrated) SiC/SiC (silicon carbide fiber in a silicon carbide matrix) ceramic matrix composites are performed. High resolution images of the cross-section of this composite material are generated using serial sectioning of the test specimens. These images are then used to develop very detailed finite element models of the cross-sections using the public domain software OOF2 (Object Oriented Analysis of Material Microstructures). Examination of these images shows that these microstructures have significant variability and irregularity. How these variabilities manifest themselves in the variability in effective properties as well as the stress distribution, damage initiation and damage progression is the overall objective of this work. Results indicate that even though the macroscopic stress-strain behavior of various sections analyzed is very similar, each section has a very distinct damage pattern when subjected to in-plane tensile loads and this damage pattern seems to follow the unique architectural and microstructural details of the analyzed sections.

Isotopic effects in sub-barrier fusion of Si + Si systems

NASA Astrophysics Data System (ADS)

Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

2018-04-01

Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion potential nicely fit the data at low energies, without the need of an imaginary potential. The comparison with the results for 28Si+28Si strengthens the explanation of the oblate shape of 28Si being the reason for the irregular behavior of that system.

Measuring excitation functions needed to interpret cosmogenic nuclide production in lunar rocks

NASA Technical Reports Server (NTRS)

Sisterson, J. M.; Kim, K.; Beverding, A.; Englert, P. A. J.; Caffee, M. W.; Vincent, J.; Castaneda, C.; Reedy, R. C.

1997-01-01

Radionuclides produced in lunar rocks by cosmic ray interactions are measured using Accelerator Mass Spectrometry or gamma-ray spectroscopy. From these measurements, estimates of the solar proton flux over time periods characterized by the half-life of the isotope under study can be made, if all the cross sections for all the reactions of all cosmic ray particles with all elements found in lunar rocks are known. Proton production cross sections are very important because (approximately) 98% of solar cosmic rays and (approximately) 87% of galactic cosmic rays are protons in the lunar environment. Many of the needed cross sections have never been measured. Targets of C, Al, Si, SiO2, mg, K, Ca, Fe and Ni have been irradiated using three accelerators to cover a proton energy range of 25-500 MeV. Excitation functions for Be-7, Be-10, Na-22, and Al-26 production from Mg and Al will be reported, and the consequences of using these new cross section values to estimate solar proton fluxes discussed.

Nuclear structure and reaction properties of Ne, Mg and Si isotopes with RMF densities

NASA Astrophysics Data System (ADS)

Panda, R. N.; Sharma, Mahesh K.; Patra, S. K.

2014-01-01

We have studied nuclear structure and reaction properties of Ne, Mg and Si isotopes, using relativistic mean field (RMF) densities, in the framework of Glauber model. Total reaction cross-section σR for Ne isotopes on 12C target have been calculated at incident energy 240 MeV. The results are compared with the experimental data and with the recent theoretical study [W. Horiuchi et al., Phys. Rev. C 86, 024614 (2012)]. Study of σR using deformed densities have shown a good agreement with the data. We have also predicted total reaction cross-section σR for Ne, Mg and Si isotopes as projectiles and 12C as target at different incident energies.

Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciurea, Magdalena Lidia, E-mail: ciurea@infim.ro; Lazanu, Sorina, E-mail: ciurea@infim.ro

2014-10-06

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increasemore » of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.« less

Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

NASA Astrophysics Data System (ADS)

Ciurea, Magdalena Lidia; Lazanu, Sorina

2014-10-01

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.

Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

NASA Astrophysics Data System (ADS)

Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

2018-06-01

In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thangadurai, P.; Lumelsky, Yulia; Silverstein, Michael S.

Transmission electron microscopy (TEM) cross-section specimens of PMMA in contact with gold and Si were prepared by focused ion beam (FIB) and compared with plan-view PMMA specimens prepared by a dip-coating technique. The specimens were characterized by TEM and electron energy loss spectroscopy (EELS). In the cross-section specimens, the thin films of PMMA were located in a Si-PMMA-Au multilayer. Different thicknesses of PMMA films were spin-coated on the Si substrates. The thickness of the TEM specimens prepared by FIB was estimated using EELS to be 0.65 of the plasmon mean-free-path. Along the PMMA-Au interface, Au particle diffusion into the PMMAmore » was observed, and the size of the Au particles was in the range of 2-4 nm. Dip-coating of PMMA directly on Cu TEM grids resulted in thin specimens with a granular morphology, with a thickness of 0.58 of the plasmon mean-free-path. The dip-coated specimens were free from ion milling induced artifacts, and thus serve as control specimens for comparison with the cross-sectioned specimens prepared by FIB.« less

Photoluminescence enhancement of silicon quantum dot monolayer by plasmonic substrate fabricated by nano-imprint lithography

NASA Astrophysics Data System (ADS)

Yanagawa, Hiroto; Inoue, Asuka; Sugimoto, Hiroshi; Shioi, Masahiko; Fujii, Minoru

2017-12-01

Near-field coupling between a silicon quantum dot (Si-QD) monolayer and a plasmonic substrate fabricated by nano-imprint lithography and having broad multiple resonances in the near-infrared (NIR) window of biological substances was studied by precisely controlling the QDs-substrate distance. A strong enhancement of the NIR photoluminescence (PL) of Si-QDs was observed. Detailed analyses of the PL and PL excitation spectra, the PL decay dynamics, and the reflectance spectra revealed that both the excitation cross-sections and the emission rates are enhanced by the surface plasmon resonances, thanks to the broad multiple resonances of the plasmonic substrate, and that the relative contribution of the two enhancement processes depends strongly on the excitation wavelength. Under excitation by short wavelength photons (405 nm), where enhancement of the excitation cross-section is not expected, the maximum enhancement was obtained when the QDs-substrate distance was around 30 nm. On the other hand, under long wavelength excitation (641 nm), where strong excitation cross-section enhancement is expected, the largest enhancement was obtained when the distance was minimum (around 1 nm). The achievement of efficient excitation of NIR luminescence of Si-QDs by long wavelength photons paves the way for the development of Si-QD-based fluorescence bio-sensing devices with a high bound-to-free ratio.

Study of the Electronic Surface States of III-V Compounds and Silicon.

DTIC Science & Technology

1981-03-31

region in metal/Si interfaces is thus at most a quantitative , with increasing intermixing going from Ag/Si, Cu/Si, Ni/Si, PdSi to Au/Si. This...to- At the present time, the above argument on cross sections noise ratio better than 102. can not be put in a completely quantitative way since the...of the intensity (0 - 23 in Fig. 2) when the system search effort (also theoretical) is made for a more quantitative becomes richer in the metal

SEGR in SiO$${}_2$$ –Si$$_3$$ N$$_4$$ Stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Javanainen, Arto; Ferlet-Cavrois, Veronique; Bosser, Alexandre

2014-04-17

This work presents experimental SEGR data for MOS-devices, where the gate dielectrics are are made of stacked SiO 2–Si 3N 4 structures. Also a semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is proposed. Then statistical interrelationship between SEGR cross-section data and simulated energy deposition probabilities in thin dielectric layers is discussed.

Relativistic Coulomb Fission

NASA Technical Reports Server (NTRS)

Norbury, John W.

1992-01-01

Nuclear fission reactions induced by the electromagnetic field of relativistic nuclei are studied for energies relevant to present and future relativistic heavy ion accelerators. Cross sections are calculated for U-238 and Pu-239 fission induced by C-12, Si-28, Au-197, and U-238 projectiles. It is found that some of the cross sections can exceed 10 b.

The Impact of Updated Zr Neutron-capture Cross Sections and New Asymptotic Giant Branch Models on our Understanding of the s process and the origin of stardust

DOE PAGES

Lugaro, M.; Tagliente, Giuseppe; Karakas, Amanda I.; ...

2013-12-13

We present model predictions for the Zr isotopic ratios produced by slow neutron captures in C-rich asymptotic giant branch (AGB) stars of masses 1.25-4 M-circle dot and metallicities Z = 0.01-0.03, and compare them to data from single meteoritic stardust silicon carbide (SiC) and high-density graphite grains that condensed in the outflows of these stars. We compare predictions produced using the Zr neutron-capture cross sections from Bao et al. and from n_TOF experiments at CERN, and present a new evaluation for the neutron-capture cross section of the unstable isotope Zr-95, the branching point leading to the production of Zr-96. Themore » new cross sections generally present an improved match with the observational data, except for the Zr-92/Zr-94 ratios, which are on average still substantially higher than predicted. The Zr-96/Zr-94 ratios can be explained using our range of initial stellar masses, with the most Zr-96-depleted grains originating from AGB stars of masses 1.8-3 M-circle dot and the others from either lower or higher masses. The Zr-90,Zr-91/Zr-94 variations measured in the grains are well reproduced by the range of stellar metallicities considered here, which is the same needed to cover the Si composition of the grains produced by the chemical evolution of the Galaxy. The Zr-92/Zr-94 versus Si-29/Si-28 positive correlation observed in the available data suggests that stellar metallicity rather than rotation plays the major role in covering the Zr-90,Zr-91,Zr-92/Zr-94 spread« less

Measurement of Kα and Kβ fluorescence cross sections for elements in the range 44<=Z<=68 at 59.5 keV

NASA Astrophysics Data System (ADS)

Budak, G.; Karabulut, A.; Demir, L.; Sahin, Y.

1999-09-01

The Kα and Kβ x-ray fluorescence cross sections have been measured for elements in the range 44<=Z<=68 at an excitation energy of 59.5-keV γ ray from 241Am radioisotope with a Si(Li) detector. A reasonable agreement is found between the present experimental results and the theoretically calculated values based on photoionization cross sections by Scofield using Hartree-Slater and Hartree-Fock central potential theory.

Charge exchange cross sections in slow collisions of Si3+ with Hydrogen atom

NASA Astrophysics Data System (ADS)

Joseph, Dwayne; Quashie, Edwin; Saha, Bidhan

2011-05-01

In recent years both the experimental and theoretical studies of electron transfer in ion-atom collisions have progressed considerably. Accurate determination of the cross sections and an understanding of the dynamics of the electron-capture process by multiply charged ions from atomic hydrogen over a wide range of projectile velocities are important in various field ranging from fusion plasma to astrophysics. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si3+, with neutrals in the cometary gas vapor. The cross sections are evaluated using the (a) full quantum and (b) semi-classical molecular orbital close coupling (MOCC) methods. Adiabatic potentials and wave functions for relavent singlet and triplet states are generated using the MRDCI structure codes. Details will be presented at the conference. In recent years both the experimental and theoretical studies of electron transfer in ion-atom collisions have progressed considerably. Accurate determination of the cross sections and an understanding of the dynamics of the electron-capture process by multiply charged ions from atomic hydrogen over a wide range of projectile velocities are important in various field ranging from fusion plasma to astrophysics. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si3+, with neutrals in the cometary gas vapor. The cross sections are evaluated using the (a) full quantum and (b) semi-classical molecular orbital close coupling (MOCC) methods. Adiabatic potentials and wave functions for relavent singlet and triplet states are generated using the MRDCI structure codes. Details will be presented at the conference. Work supported by NSF CREST project (grant #0630370).

Some peculiarities of interactions of weakly bound lithium nuclei at near-barrier energies

NASA Astrophysics Data System (ADS)

Kabyshev, A. M.; Kuterbekov, K. A.; Sobolev, Yu G.; Penionzhkevich, Yu E.; Kubenova, M. M.; Azhibekov, A. K.; Mukhambetzhan, A. M.; Lukyanov, S. M.; Maslov, V. A.; Kabdrakhimova, G. D.

2018-02-01

This paper presents new experimental data on the total cross sections of 9Li + 28Si reactions at low energies as well as the analysis of previously obtained data for 6,7Li. Based on a large collection of data (authors’ and literature data) we carried out a comparative analysis of the two main experimental interaction cross sections (angular distributions of the differential cross sections and total reaction cross sections) for weakly bound lithium (6-9Li, 11Li) nuclei in the framework of Kox parameterization and the macroscopic optical model. We identified specific features of these interactions and predicted the experimental trend in the total reaction cross sections for Li isotopes at energies close to the Coulomb barrier.

In-situ micro bend testing of SiC and the effects of Ga+ ion damage

NASA Astrophysics Data System (ADS)

Robertson, S.; Doak, SS; Zhou, Z.; Wu, H.

2017-09-01

The Young’s modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young’s modulus decreasing as the cross-sectional area reduces. One of the possible reasons for such size effect is the Ga+ induced damage on all surfaces of the cantilever. Transmission electron microscopy (TEM) was used to analyse the degree of damage, and the measurements of damage is compared to predictions by SRIM irradiation simulation.

Photochemistry on ultrathin metal films: Strongly enhanced cross sections for NO2 on Ag /Si(100)

NASA Astrophysics Data System (ADS)

Wesenberg, Claudia; Autzen, Olaf; Hasselbrink, Eckart

2006-12-01

The surface photochemistry of NO2 on ultrathin Ag(111) films (5-60nm ) on Si(100) substrates has been studied. NO2, forming N2O4 on the surface, dissociates to release NO and NO2 into the gas phase with translational energies exceeding the equivalent of the sample temperature. An increase of the photodesorption cross section is observed for 266nm light when the film thickness is decreased below 30nm despite the fact that the optical absorptivity decreases. For 4.4nm film thickness this increase is about threefold. The data are consistent with a similar effect for 355nm light. The reduced film thickness has no significant influence on the average translation energy of the desorbing molecules or the branching into the different channels. The increased photodesorption cross section is interpreted to result from photon absorption in the Si substrate producing electrons with no or little momenta parallel to the surface at energies where this is not allowed in Ag. It is suggested that these electrons penetrate through the Ag film despite the gap in the surface projected band structure.

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.

PubMed

Liu, Xinyu; Wang, Xinhua; Zhang, Yange; Wei, Ke; Zheng, Yingkui; Kang, Xuanwu; Jiang, Haojie; Li, Junfeng; Wang, Wenwu; Wu, Xuebang; Wang, Xianping; Huang, Sen

2018-06-12

Constant-capacitance deep-level transient Fourier spectroscopy is utilized to characterize the interface between a GaN epitaxial layer and a SiN x passivation layer grown by low-pressure chemical vapor deposition (LPCVD). A near-conduction band (NCB) state E LP ( E C - E T = 60 meV) featuring a very small capture cross section of 1.5 × 10 -20 cm -2 was detected at 70 K at the LPCVD-SiN x /GaN interface. A partially crystallized Si 2 N 2 O thin layer was detected at the interface by high-resolution transmission electron microscopy. Based on first-principles calculations of crystallized Si 2 N 2 O/GaN slabs, it was confirmed that the NCB state E LP mainly originates from the strong interactions between the dangling bonds of gallium and its vicinal atoms near the interface. The partially crystallized Si 2 N 2 O interfacial layer might also give rise to the very small capture cross section of the E LP owing to the smaller lattice mismatch between the Si 2 N 2 O and GaN epitaxial layer and a larger mean free path of the electron in the crystallized portion compared with an amorphous interfacial layer.

Cross-sectional and temporal association between non-suicidal self-injury and suicidal ideation in young adults: The explanatory roles of thwarted belongingness and perceived burdensomeness.

PubMed

Chu, Carol; Rogers, Megan L; Joiner, Thomas E

2016-12-30

Non-suicidal self-injury (NSSI) is a strong predictor of suicidal ideation and attempts. Consistent with the interpersonal theory of suicide, preliminary evidence suggests that NSSI is associated with higher levels of perceived burdensomeness (PB) and thwarted belongingness (TB). However, no study to date has examined the cross-sectional and prospective relationships between NSSI, TB, PB, and suicidal ideation (SI). To fill this gap, this study examined the mediating role of TB and PB in the relationship between NSSI and SI at baseline and follow-up. Young adults (N=49) with and without histories of NSSI completed self-report measures of TB, PB, and SI at three time points over two months. NSSI history was associated with higher levels of PB, TB, and SI at all time points. TB and PB significantly accounted for the relationship between NSSI history and SI at baseline. However, the relationship between NSSI history and SI at follow-up was mediated by PB, not TB. Findings provide evidence for the roles of TB and PB in the relationship between NSSI and SI, and partial support for the interpersonal theory of suicide. Future research and clinical implications are discussed. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Cross-sectional and temporal association between non-suicidal self-injury and suicidal ideation in young adults: The explanatory roles of thwarted belongingness and perceived burdensomeness

PubMed Central

Chu, Carol; Rogers, Megan L.; Joiner, Thomas E.

2016-01-01

Non-suicidal self-injury (NSSI) is a strong predictor of suicidal ideation and attempts. Consistent with the interpersonal theory of suicide, preliminary evidence suggests that NSSI is associated with higher levels of perceived burdensomeness (PB) and thwarted belongingness (TB). However, no study to date has examined the cross-sectional and prospective relationships between NSSI, TB, PB, and suicidal ideation (SI). To fill this gap, this study examined the mediating role of TB and PB in the relationship between NSSI and SI at baseline and follow-up. Young adults (N=49) with and without histories of NSSI completed self-report measures of TB, PB, and SI at three time points over two months. NSSI history was associated with higher levels of PB, TB, and SI at all time points. TB and PB significantly accounted for the relationship between NSSI history and SI at baseline. However, the relationship between NSSI history and SI at follow-up was mediated by PB, not TB. Findings provide evidence for the roles of TB and PB in the relationship between NSSI and SI, and partial support for the interpersonal theory of suicide. Future research and clinical implications are discussed. PMID:27835855

Total reaction cross sections and neutron-removal cross sections of neutron-rich light nuclei measured by the COMBAS fragment-separator

NASA Astrophysics Data System (ADS)

Hue, B. M.; Isataev, T.; Erdemchimeg, B.; Artukh, A. G.; Aznabaev, D.; Davaa, S.; Klygin, S. A.; Kononenko, G. A.; Khuukhenkhuu, G.; Kuterbekov, K.; Lukyanov, S. M.; Mikhailova, T. I.; Maslov, V. A.; Mendibaev, K.; Sereda, Yu M.; Penionzhkevich, Yu E.; Vorontsov, A. N.

2017-12-01

Preliminary results of measurements of the total reaction cross sections σR and neutron removal cross section σ-xn for weakly bound 6He, 8Li, 9Be and 10Be nuclei at energy range (20-35) A MeV with 28Si target is presented. The secondary beams of light nuclei were produced by bombardment of the 22Ne (35 A MeV) primary beam on Be target and separated by COMBAS fragment-separator. In dispersive focal plane a horizontal slit defined the momentum acceptance as 1% and a wedge degrader of 200 μm Al was installed. The Bρ of the second section of the fragment-separator was adjusted for measurements in energy range (20-35) A MeV. Two-neutron removal cross sections for 6He and 10Be and one -neutron removal cross sections 8Li and 9Be were measured.

Electron Bremsstrahlung Cross Sections at 25 and 50 keV from Xe and Kr

NASA Astrophysics Data System (ADS)

Portillo, Salvador; Quarles, C. A.

2002-05-01

Absolute doubly differential bremsstrahlung cross sections for radiation at 90 from 25 and 50 keV electron bombardment of Kr and Xe of will be presented. The electrons were accelerated by a Cockcroft - Walton accelerator into an Al chamber through a .06" Al collimator. Thick target bremsstrahlung background was minimized by having Al nipples and fixtures and by the addition of a carbon lined nipple placed at 180 to the SiLi detector. A comparison of the doubly differential cross sections will be made with current bremsstrahlung theories. The ratio of the Kr and Xe cross sections will also be compared with the theoretical cross section ratios. The ratio provides a more sensitive test of the contribution, if any, of polarization bremsstrahlung.

Total Electron-Impact Ionization Cross-Sections of CFx and NFx (x = 1 - 3)

NASA Technical Reports Server (NTRS)

Huo, Winifred M.; Tarnovsky, Vladimir; Becker, Kurt H.; Kwak, Dochan (Technical Monitor)

2001-01-01

The discrepancy between experimental and theoretical total electron-impact ionization cross sections for a group of fluorides, CFx, and NFx, (x = 1 - 3), is attributed to the inadequacies in previous theoretical models. Cross-sections calculated using a recently developed siBED (simulation Binary-Encounter-Dipole) model that takes into account the shielding of the long-range dipole potential between the scattering electron and target are in agreement with experimentation. The present study also carefully reanalyzed the previously reported experimental data to account for the possibility of incomplete collection of fragment ions and the presence of ion-pair formation channels. For NF3, our experimental and theoretical cross-sections compare well with the total ionization cross-sections recently reported by Haaland et al. in the region below dication formation.

Excitation energies, photoionization cross sections, and asymmetry parameters of the methyl and silyl radicals.

PubMed

Velasco, A M; Lavín, C; Dolgounitcheva, O; Ortiz, J V

2014-08-21

Vertical excitation energies of the methyl and silyl radicals were inferred from ab initio electron propagator calculations on the electron affinities of CH3(+) and SiH3(+). Photoionization cross sections and angular distribution of photoelectrons for the outermost orbitals of both CH3 and SiH3 radicals have been obtained with the Molecular Quantum Defect Orbital method. The individual ionization cross sections corresponding to the Rydberg channels to which the excitation of the ground state's outermost electron gives rise are reported. Despite the relevance of methyl radical in atmospheric chemistry and combustion processes, only data for the photon energy range of 10-11 eV seem to be available. Good agreement has been found with experiment for photoionization cross section of this radical. To our knowledge, predictions of the above mentioned photoionization parameters on silyl radical are made here for the first time, and we are not aware of any reported experimental measurements. An analysis of our results reveals the presence of a Cooper minimum in the photoionization of the silyl radical. The adequacy of the two theoretical procedures employed in the present work is discussed.

Convection and macrosegregation in Al-19Cu alloy directionally solidified through an abrupt contraction in cross-section: A comparison with Al-7Si

NASA Astrophysics Data System (ADS)

Ghods, M.; Lauer, M.; Grugel, R. N.; Tewari, S. N.; Poirier, D. R.

2017-02-01

Hypoeutectic Al-19 wt. % Cu alloys were directionally solidified in cylindrical molds that featured an abrupt cross-section decrease 9.5 to 3.2 mm in diameter). Thermo-solutal convection and cross-section-change-induced shrinkage flow effects on macrosegregation were investigated. Dendrite clustering and extensive radial macrosegregation was seen, particularly in the larger cross-section before contraction. This alloy shows positive longitudinal macrosegregation near the contraction followed by negative macrosegregation right after it; the extent of macrosegregation, however, decreases with increasing growth speed. The degree of thermo-solutal convection was compared to another study investigating directional solidification of Al-7 wt. % Si [1] in order to study the effect of solutal expansion coefficient on macrosegregation. An interesting change of the radial macrosegregation profile, attributable to the area-change-induced-shrinkage flow, was observed very close to the contraction. A two-dimensional model accounting for both shrinkage and thermo-solutal convection was used to simulate solidification, the resulting steepling as well as axial and radial macrosegregation. The experimentally observed macrosegregation associated with the contraction during directional solidification was well predicted by the numerical simulations.

Excitation energies, photoionization cross sections, and asymmetry parameters of the methyl and silyl radicals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velasco, A. M.; Lavín, C., E-mail: clavin@qf.uva.es; Dolgounitcheva, O.

2014-08-21

Vertical excitation energies of the methyl and silyl radicals were inferred from ab initio electron propagator calculations on the electron affinities of CH{sub 3}{sup +} and SiH{sub 3}{sup +}. Photoionization cross sections and angular distribution of photoelectrons for the outermost orbitals of both CH{sub 3} and SiH{sub 3} radicals have been obtained with the Molecular Quantum Defect Orbital method. The individual ionization cross sections corresponding to the Rydberg channels to which the excitation of the ground state's outermost electron gives rise are reported. Despite the relevance of methyl radical in atmospheric chemistry and combustion processes, only data for the photonmore » energy range of 10–11 eV seem to be available. Good agreement has been found with experiment for photoionization cross section of this radical. To our knowledge, predictions of the above mentioned photoionization parameters on silyl radical are made here for the first time, and we are not aware of any reported experimental measurements. An analysis of our results reveals the presence of a Cooper minimum in the photoionization of the silyl radical. The adequacy of the two theoretical procedures employed in the present work is discussed.« less

Stressed Oxidation of C/SiC Composites

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Brewer, David N.; Eckel, Andrew J.; Cawley, James D.

1997-01-01

Constant load, stressed oxidation testing was performed on T-300 C/SiC composites with a SiC seal coat. Test conditions included temperatures ranging from 350 C to 1500 C at stresses of 69 MPa and 172 MPa (10 and 25 ksi). The coupon subjected to stressed oxidation at 550 C/69 MPa for 25 hours had a room temperature residual strength one-half that of the as-received coupons. The coupon tested at the higher stress and all coupons tested at higher temperatures failed in less than 25 hr. Microstructural analysis of the fracture surfaces, using SEM (scanning electron microscopy), revealed the formation of reduced cross-sectional fibers with pointed tips. Analysis of composite cross-sections show pathways for oxygen ingress. The discussion will focus on fiber/matrix interphase oxidation and debonding as well as the formation and implications of the fiber tip morphology.

Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

NASA Astrophysics Data System (ADS)

Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

2017-06-01

We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals.

PubMed

Ghosh, Ramesh; Giri, P K; Imakita, Kenji; Fujii, Minoru

2014-01-31

Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Cross sections for electron collision with difluoroacetylene

NASA Astrophysics Data System (ADS)

Gupta, Dhanoj; Choi, Heechol; Kwon, Deuk-Chul; Yoon, Jung-Sik; Antony, Bobby; Song, Mi-Young

2017-04-01

We report a detailed calculation of total elastic, differential elastic, momentum transfer and electronic excitation for electron impact on difluoroacetylene (C2F2) molecules using the R-matrix method at low energies. After testing many target models, the final results are reported for the target model that gave the best target properties and predicted the lowest value of the shape resonance. The shape resonance is detected at 5.86 eV and 6.49 eV with the close-coupling and static exchange models due to 2Πg (2B2g, 2B3g) states. We observed that the effect of polarization becomes prominent at low energies below 4 eV, decreasing the magnitude of the elastic cross section systematically as it increases for C2F2. We have also computed elastic cross sections for C2H2, C2F4 and C2H4 with a similar model and compared with the experimental data for these molecules along with C2F2. General agreement is found in terms of the shape and nature of the cross section. Such a comparison shows the reliability of the present method for obtaining the cross section for C2F2. The calculation of elastic scattering cross section is extended to higher energies up to 5 keV using the spherical complex optical potential method. The two methods are found to be consistent, merging at around 12 eV for the elastic scattering cross section. Finally we report the total ionization cross section using the binary encounter Bethe method for C2F2. The perfluorination effect in the shape and magnitude of the elastic, momentum transfer and ionization cross sections when compared with C2H2 showed a similar trend to that in the C2H4-C2F4 and C6H6-C6F6 systems. The cross-section data reported in this article could be an important input for the development of a C2F2 plasma model for selective etching of Si/SiO2 in the semiconductor industry.

Benchmarking the evaluated proton differential cross sections suitable for the EBS analysis of natSi and 16O

NASA Astrophysics Data System (ADS)

Kokkoris, M.; Dede, S.; Kantre, K.; Lagoyannis, A.; Ntemou, E.; Paneta, V.; Preketes-Sigalas, K.; Provatas, G.; Vlastou, R.; Bogdanović-Radović, I.; Siketić, Z.; Obajdin, N.

2017-08-01

The evaluated proton differential cross sections suitable for the Elastic Backscattering Spectroscopy (EBS) analysis of natSi and 16O, as obtained from SigmaCalc 2.0, have been benchmarked over a wide energy and angular range at two different accelerator laboratories, namely at N.C.S.R. 'Demokritos', Athens, Greece and at Ruđer Bošković Institute (RBI), Zagreb, Croatia, using a variety of high-purity thick targets of known stoichiometry. The results are presented in graphical and tabular forms, while the observed discrepancies, as well as, the limits in accuracy of the benchmarking procedure, along with target related effects, are thoroughly discussed and analysed. In the case of oxygen the agreement between simulated and experimental spectra was generally good, while for silicon serious discrepancies were observed above Ep,lab = 2.5 MeV, suggesting that a further tuning of the appropriate nuclear model parameters in the evaluated differential cross-section datasets is required.

Interactions of 13. 6-GeV/nucleon [sup 16]O and [sup 28]Si with carbon, aluminum, and copper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cumming, J.B.; Chu, Y.Y.; Haustein, P.E.

1993-10-01

Cross sections for forming [sup 24]Na and [sup 18]F by the interactions of 13.6-GeV/nucleon [sup 16]O and [sup 28]Si ions with Al and for forming [sup 24]Na in [sup 16]O interactions with Cu have been measured relative to the cross section for forming [sup 11]C from carbon. The results are generally consistent with energy-independent inclusive cross sections (limiting fragmentation) for heavy ions between [similar to]2 and 13.6 GeV/nucleon. However, comparison of the heavy-ion data with those for high-energy protons indicates a significantly weaker dependence on projectile size than that predicted by the factorization hypothesis for [sigma][sub C]([sup 11]C), [sigma][sub Al]([supmore » 18]F), and [sigma][sub Al]([sup 24]Na). The dependence is slightly stronger in the case of [sigma][sub Cu]([sup 24]Na).« less

In-situ observation of the growth of individual silicon wires in the zinc reduction reaction of SiCl4

NASA Astrophysics Data System (ADS)

Inasawa, Susumu

2015-02-01

We conducted in-situ monitoring of the formation of silicon wires in the zinc reduction reaction of SiCl4 at 950 °C. Tip growth with a constant growth rate was observed. Some wires showed a sudden change in the growth direction during their growth. We also observed both the lateral faces and cross sections of formed wires using a scanning electron microscope. Although wires with smooth lateral faces had a smooth hexagonal cross section, those with rough lateral faces had a polygonal cross section with a radial pattern. The transition of lateral faces from smooth to rough was found even in a single wire. Because the diameter of the rough part became larger than that of the smooth part, we consider that the wire diameter is a key factor for the lateral faces. Our study revealed that both dynamic and static observations are still necessary to further understand the VLS growth of wires and nanowires.

Molecular versus squared Woods-Saxon α-nucleus potentials in the 27Al(α, t)28Si reaction

NASA Astrophysics Data System (ADS)

Abdullah, M. N. A.; Das, S. K.; Tariq, A. S. B.; Mahbub, M. S.; Mondal, A. S.; Uddin, M. A.; Basak, A. K.; Gupta, H. M. Sen; Malik, F. B.

2003-06-01

The differential cross-section of the 27Al(alpha, t)28Si reaction for 64.5 MeV incident energy has been reanalysed in DWBA with full finite range using a squared Woods-Saxon (Michel) alpha-nucleus potential with the modified value of the depth parameter alpha = 2.0 as reported in a comment article by Michel and Reidemeister. This new value produces significant improvement in fitting the data of the reaction with its overall performance, in some cases, close to that previously observed for the molecular potential. Although the non-monotonic shallow molecular potential with a soft repulsive core and the Michel potentials produce the same quality fits to the elastic scattering and non-elastic processes, they are not phase equivalent. The two types of potential produce altogether different cross-sections, particularly at large reaction angles. The importance of the experimental cross-sections at large angles for both elastic scattering and non-elastic processes is elucidated.

Total Reaction Cross Section Excitation Function Studies for 6He Interaction with 181Ta, 59Co, natSi, 9Be Nuclei

NASA Astrophysics Data System (ADS)

Sobolev, Yu. G.; Penionzhkevich, Yu. E.; Borcea, C.; Demekhina, N. A.; Eshanov, A. G.; Ivanov, M. P.; Kabdrakhimova, G. D.; Kabyshev, A. M.; Kugler, A.; Kuterbekov, K. A.; Lukyanov, K. V.; Maj, A.; Maslov, V. A.; Negret, A.; Skobelev, N. K.; Testov, D.; Trzaska, W. H.; Voskobojnik, E. I.; Zemlyanaya, E. V.

2015-06-01

Total reaction cross section excitation functions σR(E) were measured for 6He secondary beam particles on 181Ta, 59Co, natSi and 9Be targets in a wide energy range by direct and model-independent method. This experimental method was based on prompt n-γ 4π-technique applied in event-by event mode. A high efficiency CsI(Tl) γ-spectrometer was used for the detection of reaction products (prompt γ-quanta and neutrons) accompanying each reaction event. Using the ACCULINNA fragment-separator 6He fragments (produced by 11B primary beam with 9Be target) are separated and transported to n-γ shielded experimental cave at FLNR JINR. The measured total reaction cross section data σR(E) for the above mentioned reactions are compared with a theoretical calculation based on the optical potential with the real part having the double-folding form.

Double-differential cross section for ionization of H2O molecules by 4-MeV/u C6 + and Si13 + ions

NASA Astrophysics Data System (ADS)

Bhattacharjee, Shamik; Biswas, S.; Monti, J. M.; Rivarola, R. D.; Tribedi, L. C.

2017-11-01

Double-differential cross section (DDCS) for electrons ejected in collisions of fast C6 + and Si13 + projectiles, with a H2O vapor target, were measured. The electrons were detected over an energy range of 1-600 eV and an angular range of 20∘-160∘. The obtained DDCS spectra, for both the ions, were compared with the CDW-EIS model. Occasional reference has been made to the DDCS data for the case of 3.75-MeV/u O8 + colliding on the same molecule for an overall comparison. A reasonable agreement with theoretical results was seen for the case of C6 + and O8 + projectiles. However, between C6 + and O8 + projectiles, the deviation from theory is larger for the case of the carbon projectile. Substantial deviation starts to show up for the case of the Si13 + projectile. By numerical integration of the DDCS data, the single-differential cross section (SDCS) and total cross section (TCS) were obtained and compared with theoretical models. The present TCS data along with the other available data for p , He , and C ions were plotted together. A clear and gradual deviation from the Bethe-Born predicted q2 scaling was observed, where q is the projectile charge state. From all the data we find TCS varies as qn where n = 1.7 ± 0.1. The provided data set will be valuable in order to help model the radiation damage in hadron therapy, particularly in the Bragg peak region.

Characteristics of poly- and mono-crystalline BeO and SiO2 as thermal and cold neutron filters

NASA Astrophysics Data System (ADS)

Adib, M.; Habib, N.; Bashter, I. I.; Morcos, H. N.; El-Mesiry, M. S.; Mansy, M. S.

2015-09-01

A simple model along with a computer code "HEXA-FILTERS" is used to carry out the calculation of the total cross-sections of BeO and SiO2 having poly or mono-crystalline form as a function of neutron wavelength at room (R.T.) and liquid nitrogen (L.N.) temperatures. An overall agreement is indicated between the calculated neutron cross-sections and experimental data. Calculation shows that 25 cm thick of polycrystalline BeO cooled at liquid nitrogen temperature was found to be a good filter for neutron wavelengths longer than 0.46 nm. While, 50 cm of SiO2, with much less transmission, for neutrons with wavelengths longer than 0.85 nm. It was also found that 10 cm of BeO and 15 cm SiO2 thick mono-crystals cut along their (0 0 2) plane, with 0.5° FWHM on mosaic spread and cooled at L.N., are a good thermal neutron filter, with high effect-to-noise ratio.

Electronic stopping in oxides beyond Bragg additivity

NASA Astrophysics Data System (ADS)

Sigmund, P.; Schinner, A.

2018-01-01

We present stopping cross sections calculated by our PASS code for several ions in metal oxides and SiO2 over a wide energy range. Input takes into account changes in the valence structure by assigning two additional electrons to the 2p shell of oxygen and removing the appropriate number of electrons from the outer shells of the metal atom. Results are compared with tabulated experimental values and with two versions of Bragg's additivity rule. Calculated stopping cross sections are applied in testing a recently-proposed scaling rule, which relates the stopping cross section to the number of oxygen atoms per molecule.

Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prohl, Christopher; Lenz, Andrea, E-mail: alenz@physik.tu-berlin.de; Döscher, Henning

2016-05-15

In a fundamental cross-sectional scanning tunneling microscopy investigation on epitaxially grown GaP layers on a Si(001) substrate, differently oriented antiphase boundaries are studied. They can be identified by a specific contrast and by surface step edges starting/ending at the position of an antiphase boundary. Moreover, a change in the atomic position of P and Ga atoms along the direction of growth is observed in agreement with the structure model of antiphase boundaries in the GaP lattice. This investigation opens the perspective to reveal the orientation and position of the antiphase boundaries at the atomic scale due to the excellent surfacemore » sensitivity of this method.« less

Cross-sectional aspect ratio modulated electronic properties in Si/Ge core/shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Nuo; Lu, Ning; Yao, Yong-Xin

2013-02-28

Electronic structures of (4, n) and (m, 4) (the NW has m layers parallel to the {1 1 1} facet and n layers parallel to {1 1 0}) Si/Ge core/shell nanowires (NWs) along the [1 1 2] direction with cross-sectional aspect ratio (m/n) from 0.36 to 2.25 are studied by first-principles calculations. An indirect to direct band gap transition is observed as m/n decreases, and the critical values of m/n and diameter for the transition are also estimated. The size of the band gap also depends on the aspect ratio. These results suggest that m/n plays an important role inmore » modulating the electronic properties of the NWs.« less

Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

NASA Astrophysics Data System (ADS)

Arisawa, You; Sawano, Kentarou; Usami, Noritaka

2017-06-01

The influence of ion implantation energies on compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si substrates was investigated. It was found that relaxation ratio can be enhanced over 100% at relatively low implantation energies, and compressive strain in the topmost Si layer is maximized at 45 keV due to large lattice mismatch. Cross-sectional transmission electron microscope images revealed that defects are localized around the hetero-interface between the Si1-xCx layer and the Ar+-implanted Si substrate when the implantation energy is 45 keV, which decreases the amount of defects in the topmost Si layer and the upper part of the Si1-xCx buffer layer.

Size of lethality target in mouse immature oocytes determined with accelerated heavy ions.

PubMed

Straume, T; Dobson, R L; Kwan, T C

1989-01-01

Mouse immature oocytes were irradiated in vivo with highly charged, heavy ions from the Bevalac accelerator at the Lawrence Berkeley Laboratory. The particles used were 670-MeV/nucleon Si14+, 570-MeV/nucleon Ar18+, and 450-MeV/nucleon Fe26+. The cross-sectional area of the lethality target in these extremely radiosensitive cells was determined from fluence-response curves and information on energy deposition by delta rays. Results indicate a target cross-section larger than that of the nucleus, one which closely approximates the cross-sectional area of the entire oocyte. For 450-MeV/nucleon Fe26+ particles, the predicted target cross-sectional area is 120 +/- 16 microns2, comparing well with the microscopically determined cross-sectional area of 111 +/- 12 microns2 for these cells. The present results are in agreement with our previous target studies which implicate the oocyte plasma membrane.

Single and double capture in F9+ + Ar collisions: Comparison of total capture with capture occurring from the Ar K shell

NASA Astrophysics Data System (ADS)

La Mantia, David; Kumara, Nuwan; Kayani, Asghar; Simon, Anna; Tanis, John

2016-05-01

Total cross sections for single and double capture, as well as the corresponding cross sections for capture resulting in the emission of an Ar K x ray, were measured. This work was performed at Western Michigan University with the use of the tandem Van de Graaff accelerator. A 45 MeV beam of fully-stripped fluorine ions was collided with argon gas molecules in a differentially pumped cell. Surface barrier detectors were used to observe the charge changed projectiles and a Si(Li) x-ray detector, placed at 90o to the incident beam, were used to measure coincidences with Ar K x rays. The total capture cross sections are compared to previously measured cross sections in the existing literature. The coincidence cross sections, considerably smaller than the total cross sections, are found to be nearly equal for single and double capture in contrast to the total cross sections, which vary by about an order of magnitude. Possible reasons for this behavior are discussed. Supported in part by the NSF.

Spurious Grain Formation at Cross-Sectional Expansion During Directional Solidification: Influence of Thermosolutal Convection

NASA Astrophysics Data System (ADS)

Ghods, M.; Lauer, M.; Upadhyay, S. R.; Grugel, R. N.; Tewari, S. N.; Poirier, D. R.

2018-04-01

Formation of spurious grains during directional solidification (DS) of Al-7 wt.% Si and Al-19 wt.% Cu alloys through an abrupt increase in cross-sectional area has been examined by experiments and by numerical simulations. Stray grains were observed in the Al-19 wt.% Cu samples and almost none in the Al-7 wt.% Si. The locations of the stray grains correlate well where numerical solutions indicate the solute-rich melt to be flowing up the thermal gradient faster than the isotherm velocity. It is proposed that the spurious grain formation occurred by fragmentation of slender tertiary dendrite arms was enhanced by thermosolutal convection. In Al-7 wt.% Si, the dendrite fragments sink in the surrounding melt and get trapped in the dendritic array growing around them, and therefore they do not grow further. In the Al-19 wt.% Cu alloy, on the other hand, the dendrite fragments float in the surrounding melt and some find conducive thermal conditions for further growth and become stray grains.

Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

NASA Astrophysics Data System (ADS)

Higbie, J. M.; Perreault, J. D.; Acosta, V. M.; Belthangady, C.; Lebel, P.; Kim, M. H.; Nguyen, K.; Demas, V.; Bajaj, V.; Santori, C.

2017-05-01

Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, nonbleaching emission line at 738 nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We measure the two-photon fluorescence cross section of a negatively charged silicon vacancy (Si -V- ) in ion-implanted bulk diamond to be 0.74 (19 )×10-50 cm4 s /photon at an excitation wavelength of 1040 nm. Compared to the diamond nitrogen-vacancy center, the expected detection threshold of a two-photon excited Si -V center is more than an order of magnitude lower, largely due to its much narrower linewidth. We also present measurements of two- and three-photon excitation spectra, finding an increase in the two-photon cross section with decreasing wavelength, and we discuss the physical interpretation of the spectra in the context of existing models of the Si -V energy-level structure.

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powel J. Anthony; Spry, David J.; Trunek, Andrew J.; Huang, Xianrong; Vetter, William M.; Dudley, Michael; Skowronski, Marek; Liu, Jinqiang

2002-01-01

This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.

Following electron impact excitation of single (N, O, F, Ne, Na, Mg, Al, Si) atom L subshells ionization cross section calculations by using Lotz's equation

NASA Astrophysics Data System (ADS)

Aydinol, Mahmut

2017-02-01

L shell and L subshells ionization cross sections σL and σLi (i = 1, 2, 3) following electron impact on (N,O, F, Ne, Na, Mg, Al, Si) atoms calculated. By using Lotz' equation for nonrelativistic cases in Matlab σL and σLi cross section values obtained for ten electron impact(Eo) values in the range of ELi

The electroluminescence mechanism of Er³⁺ in different silicon oxide and silicon nitride environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rebohle, L., E-mail: l.rebohle@hzdr.de; Wutzler, R.; Braun, M.

Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO₂ and an Er-implanted layer made of SiO₂, Si-rich SiO₂, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficienciesmore » in the order of 2 × 10⁻³ (for SiO₂:Er) or 2 × 10⁻⁴(all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5 × 10⁻¹⁵cm⁻². Whereas the fraction of potentially excitable Er ions in SiO₂ can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO₂ or Si nitride compared to SiO₂ as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er³⁺. For all investigated devices, EL quenching cross sections in the 10⁻²⁰ cm² range and charge-to-breakdown values in the range of 1–10 C cm⁻² were measured. For the present design with a SiO₂ acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.« less

Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

NASA Astrophysics Data System (ADS)

Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

2018-06-01

Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

Photodecomposition of Mo(CO)[sub 6]/Si(111) 7[times]7: CO state-resolved evidence for excited state relaxation and quenching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, P.M.; Buntin, S.A.; Richter, L.J.

1994-08-15

State-resolved detection techniques have been used to characterize the ultraviolet photodecomposition dynamics of Mo(CO)[sub 6] on Si(111) 7[times]7 at 100 K. Details of the excitation/fragmentation mechanism including adsorbate energy transfer were examined by measuring the cross sections and the internal and translational energies of the photoejected CO from submonolayer through multilayer coverage regimes. The CO energy distributions are found to be independent of Mo(CO)[sub 6] coverage, and can be characterized by two components with markedly different mean energies. In contrast to the coverage independence of the measured energy disposal, the cross section was found to decrease by a factor ofmore » 3 from multilayer coverages to submonolayer coverages.« less

Effects of Microstructural Variability on Thermo-Mechanical Properties of a Woven Ceramic Matrix Composite

NASA Technical Reports Server (NTRS)

Goldsmith, Marlana B.; Sankar, Bhavani V.; Haftka, Raphael T.; Goldberg, Robert K.

2013-01-01

The objectives of this paper include identifying important architectural parameters that describe the SiC/SiC five-harness satin weave composite and characterizing the statistical distributions and correlations of those parameters from photomicrographs of various cross sections. In addition, realistic artificial cross sections of a 2D representative volume element (RVE) are generated reflecting the variability found in the photomicrographs, which are used to determine the effects of architectural variability on the thermo-mechanical properties. Lastly, preliminary information is obtained on the sensitivity of thermo-mechanical properties to architectural variations. Finite element analysis is used in combination with a response surface and it is shown that the present method is effective in determining the effects of architectural variability on thermo-mechanical properties.

Preparation and characterization of 33S samples for 33S(n, α)30Si cross-section measurements at the n_TOF facility at CERN

NASA Astrophysics Data System (ADS)

Praena, J.; Ferrer, F. J.; Vollenberg, W.; Sabaté-Gilarte, M.; Fernández, B.; García-López, J.; Porras, I.; Quesada, J. M.; Altstadt, S.; Andrzejewski, J.; Audouin, L.; Bécares, V.; Barbagallo, M.; Bečvář, F.; Belloni, F.; Berthoumieux, E.; Billowes, J.; Boccone, V.; Bosnar, D.; Brugger, M.; Calviño, F.; Calviani, M.; Cano-Ott, D.; Carrapiço, C.; Cerutti, F.; Chiaveri, E.; Chin, M.; Colonna, N.; Cortés, G.; Cortés-Giraldo, M. A.; Diakaki, M.; Dietz, M.; Domingo-Pardo, C.; Dressler, R.; Durán, I.; Eleftheriadis, C.; Ferrari, A.; Fraval, K.; Furman, V.; Göbel, K.; Gómez-Hornillos, M. B.; Ganesan, S.; García, A. R.; Giubrone, G.; Gonçalves, I. F.; González-Romero, E.; Goverdovski, A.; Griesmayer, E.; Guerrero, C.; Gunsing, F.; Heftrich, T.; Hernández-Prieto, A.; Heyse, J.; Jenkins, D. G.; Jericha, E.; Käppeler, F.; Kadi, Y.; Karadimos, D.; Katabuchi, T.; Ketlerov, V.; Khryachkov, V.; Kivel, N.; Koehler, P.; Kokkoris, M.; Kroll, J.; Krtička, M.; Lampoudis, C.; Langer, C.; Leal-Cidoncha, E.; Lederer, C.; Leeb, H.; Leong, L. S.; Lerendegui-Marco, J.; Losito, R.; Mallick, A.; Manousos, A.; Marganiec, J.; Martínez, T.; Massimi, C.; Mastinu, P.; Mastromarco, M.; Mendoza, E.; Mengoni, A.; Milazzo, P. M.; Mingrone, F.; Mirea, M.; Mondelaers, W.; Paradela, C.; Pavlik, A.; Perkowski, J.; Plompen, A. J. M.; Rauscher, T.; Reifarth, R.; Riego-Perez, A.; Robles, M.; Rubbia, C.; Ryan, J. A.; Sarmento, R.; Saxena, A.; Schillebeeckx, P.; Schmidt, S.; Schumann, D.; Sedyshev, P.; Tagliente, G.; Tain, J. L.; Tarifeño-Saldivia, A.; Tarrío, D.; Tassan-Got, L.; Tsinganis, A.; Valenta, S.; Vannini, G.; Variale, V.; Vaz, P.; Ventura, A.; Vermeulen, M. J.; Vlachoudis, V.; Vlastou, R.; Wallner, A.; Ware, T.; Weigand, M.; Weiss, C.; Wright, T.; Žugec, P.; n TOF Collaboration

2018-05-01

Thin 33S samples for the study of the 33S(n, α)30Si cross-section at the n_TOF facility at CERN were made by thermal evaporation of 33S powder onto a dedicated substrate made of kapton covered with thin layers of copper, chromium and titanium. This method has provided for the first time bare sulfur samples a few centimeters in diameter. The samples have shown an excellent adherence with no mass loss after few years and no sublimation in vacuum at room temperature. The determination of the mass thickness of 33S has been performed by means of Rutherford backscattering spectrometry. The samples have been successfully tested under neutron irradiation.

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

PubMed Central

Wang, Rui; Lu, Fen; Fan, Wei Jun; Liu, Chong Yang; Loh, Ter-Hoe; Nguyen, Hoai Son; Narayanan, Balasubramanian

2007-01-01

Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

NASA Astrophysics Data System (ADS)

Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen

2017-03-01

In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs with two channel crystallographic orientations <1 1 0> and <1 0 0> and six different cross-section profiles. In the first part, we study the impact of quantum corrections on the gate capacitance and mobile charge in the channel. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic performance of the NWTs, is also investigated. The influence of the rotating of the NWTs cross-sectional geometry by 90° on charge distribution in the channel is also studied. We compare the correlation between the charge profile in the channel and cross-sectional dimension for circular transistor with four different cross-sections diameters: 5 nm, 6 nm, 7 nm and 8 nm. In the second part of this paper, we expand the computational study by including different gate lengths for some of the Si NWTs. As a result, we establish a correlation between the mobile charge distribution in the channel and the gate capacitance, drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All calculations are based on a quantum mechanical description of the mobile charge distribution in the channel. This description is based on the solution of the Schrödinger equation in NWT cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions.

State of the art timing in TOF-PET detectors with LuAG, GAGG and L(Y)SO scintillators of various sizes coupled to FBK-SiPMs

NASA Astrophysics Data System (ADS)

Gundacker, S.; Acerbi, F.; Auffray, E.; Ferri, A.; Gola, A.; Nemallapudi, M. V.; Paternoster, G.; Piemonte, C.; Lecoq, P.

2016-08-01

Time of flight (TOF) in positron emission tomography (PET) has experienced a revival of interest after its first introduction in the eighties. This is due to a significant progress in solid state photodetectors (SiPMs) and newly developed scintillators (LSO and its derivatives). Latest developments at Fondazione Bruno Kessler (FBK) lead to the NUV-HD SiPM with a very high photon detection efficiency of around 55%. Despite the large area of 4×4 mm2 it achieves a good single photon time resolution (SPTR) of 180±5ps FWHM. Coincidence time resolution (CTR) measurements using LSO:Ce codoped with Ca scintillators yield best values of 73±2ps FWHM for 2×2×3 mm3 and 117±3ps for 2×2×20 mm3 crystal sizes. Increasing the crystal cross-section from 2×2 mm2 to 3×3 mm2 a non negligible CTR deterioration of approximately 7ps FWHM is observed. Measurements with LSO:Ce codoped Ca and LYSO:Ce scintillators with various cross-sections (1×1 mm2 - 4×4 mm2) and lengths (3mm - 30mm) will be a basis for discussing on how the crystal geometry affects timing in TOF-PET. Special attention is given to SiPM parameters, e.g. SPTR and optical crosstalk, and their measured dependency on the crystal cross-section. Additionally, CTR measurements with LuAG:Ce, LuAG:Pr and GGAG:Ce samples are presented and the results are interpreted in terms of their scintillation properties, e.g. rise time, decay time, light yield and emission spectra.

^{7}Be(n,α)^{4}He Reaction and the Cosmological Lithium Problem: Measurement of the Cross Section in a Wide Energy Range at n_TOF at CERN.

PubMed

Barbagallo, M; Musumarra, A; Cosentino, L; Maugeri, E; Heinitz, S; Mengoni, A; Dressler, R; Schumann, D; Käppeler, F; Colonna, N; Finocchiaro, P; Ayranov, M; Damone, L; Kivel, N; Aberle, O; Altstadt, S; Andrzejewski, J; Audouin, L; Bacak, M; Balibrea-Correa, J; Barros, S; Bécares, V; Bečvář, F; Beinrucker, C; Berthoumieux, E; Billowes, J; Bosnar, D; Brugger, M; Caamaño, M; Calviani, M; Calviño, F; Cano-Ott, D; Cardella, R; Casanovas, A; Castelluccio, D M; Cerutti, F; Chen, Y H; Chiaveri, E; Cortés, G; Cortés-Giraldo, M A; Cristallo, S; Diakaki, M; Domingo-Pardo, C; Dupont, E; Duran, I; Fernandez-Dominguez, B; Ferrari, A; Ferreira, P; Furman, W; Ganesan, S; García-Rios, A; Gawlik, A; Glodariu, T; Göbel, K; Gonçalves, I F; González-Romero, E; Griesmayer, E; Guerrero, C; Gunsing, F; Harada, H; Heftrich, T; Heyse, J; Jenkins, D G; Jericha, E; Katabuchi, T; Kavrigin, P; Kimura, A; Kokkoris, M; Krtička, M; Leal-Cidoncha, E; Lerendegui, J; Lederer, C; Leeb, H; Lo Meo, S; Lonsdale, S J; Losito, R; Macina, D; Marganiec, J; Martínez, T; Massimi, C; Mastinu, P; Mastromarco, M; Mazzone, A; Mendoza, E; Milazzo, P M; Mingrone, F; Mirea, M; Montesano, S; Nolte, R; Oprea, A; Pappalardo, A; Patronis, N; Pavlik, A; Perkowski, J; Piscopo, M; Plompen, A; Porras, I; Praena, J; Quesada, J; Rajeev, K; Rauscher, T; Reifarth, R; Riego-Perez, A; Rout, P; Rubbia, C; Ryan, J; Sabate-Gilarte, M; Saxena, A; Schillebeeckx, P; Schmidt, S; Sedyshev, P; Smith, A G; Stamatopoulos, A; Tagliente, G; Tain, J L; Tarifeño-Saldivia, A; Tassan-Got, L; Tsinganis, A; Valenta, S; Vannini, G; Variale, V; Vaz, P; Ventura, A; Vlachoudis, V; Vlastou, R; Vollaire, J; Wallner, A; Warren, S; Weigand, M; Weiß, C; Wolf, C; Woods, P J; Wright, T; Žugec, P

2016-10-07

The energy-dependent cross section of the ^{7}Be(n,α)^{4}He reaction, of interest for the so-called cosmological lithium problem in big bang nucleosynthesis, has been measured for the first time from 10 meV to 10 keV neutron energy. The challenges posed by the short half-life of ^{7}Be and by the low reaction cross section have been overcome at n_TOF thanks to an unprecedented combination of the extremely high luminosity and good resolution of the neutron beam in the new experimental area (EAR2) of the n_TOF facility at CERN, the availability of a sufficient amount of chemically pure ^{7}Be, and a specifically designed experimental setup. Coincidences between the two alpha particles have been recorded in two Si-^{7}Be-Si arrays placed directly in the neutron beam. The present results are consistent, at thermal neutron energy, with the only previous measurement performed in the 1960s at a nuclear reactor. The energy dependence reported here clearly indicates the inadequacy of the cross section estimates currently used in BBN calculations. Although new measurements at higher neutron energy may still be needed, the n_TOF results hint at a minor role of this reaction in BBN, leaving the long-standing cosmological lithium problem unsolved.

Fundamental Studies of the Silicon Carbide MOS Interface

NASA Astrophysics Data System (ADS)

Swandono, Steven

Climate change has placed a spotlight on renewable energy. Power electronics are essential to minimize energy loss when electricity is converted to a form used on the power grid. With silicon devices now approaching performance limits, SiC MOSFET can deliver power electronics to greater heights. However, the power capability of SiC MOSFETs is constrained by having low interface carrier mobility. It was coincidentally discovered that MOSFETs with oxide grown in alumina tubes have significantly higher mobility. We believe that the large surface potential fluctuations in SiC MOS interface results in percolation transport, and sodium ions from the alumina tubes reduces these percolative effects. Fabrication of SiC MOSFETs with different oxide thickness can vary the surface potential fluctuations and is used to verify the impact of percolation transport on SiC interface mobility. Characterization techniques on SiC devices are adopted from their silicon counterparts. Many characterization techniques are not tailored to the specification of SiC materials and hence, result in conflicting results during comparison of data among different research groups. The later chapters discussed the inaccuracies in the MOS AC conductance technique caused by the non-linear surface potential - gate voltage relationship and an energy-dependent interface state density. Using an exact model, we quantify errors in the extraction of interface state density, capture cross section, and position of the surface Fermi level when analyzed using the standard Nicollian-Goetzberger equations. We show that the exponential dependence of capture cross section on energy near the band edges is an artifact of the data analysis.

Capping of rare earth silicide nanowires on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Appelfeller, Stephan; Franz, Martin; Kubicki, Milan

The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain duemore » to the lattice mismatch between the Si overlayer and the nanowires.« less

Preparation of PVDF/SiO2 composite membrane for salty oil emulsion separation: Physicochemical properties changes and its impact on fouling propensity

NASA Astrophysics Data System (ADS)

Ngang, H. P.; Ahmad, A. L.; Low, S. C.; Ooi, B. S.

2017-06-01

In this study, polyvinylidene fluoride (PVDF)/silica (SiO2) composite membranes were prepared by diffusion induced phase separation through direct blending method. The roles of SiO2 particles concentration on membrane physicochemical properties were evaluated through oil emulsion separation under high ionic strength environment whereby hydrophobic interaction is prevalent. Membranes were characterized using field emission scanning electron microscope (FESEM), atomic force microscopy (AFM), contact angle measurement, membrane porosity and pore size distribution. It was expected that by adding the monodispersed SiO2, it will render the membrane with hydrophilic characteristic. However, it is concomitantly changing the physical properties of the membrane. Addition of SiO2 caused the changes to the physicochemical properties of the composite membrane and its effects on the fouling propensity were evaluated. It was found that the mean pore size of the membranes increased with the increase of SiO2 concentration. The addition of hydrophilic SiO2 had accelerated the precipitation of the membrane dope solution resulting in changes of membrane cross section morphology. FESEM images showed the membrane cross-section morphology of PVDF/SiO2 composite membrane had gradually changed from finger-like to macrovoid-like structure with the increased of SiO2 concentration. The hydrophilicity of the PVDF/SiO2 composite membrane was enhanced which is a desired property for water purification. However, the changes in physical properties (pore size, porosity, and surface roughness) had played more dominant role in the oil emulsion fouling behaviour rather than hydrophilicity enhancement. Due to the salting out effect under high ionic strength environment, hydrophobic interaction played an important role in the oil adsorption. The increment in membrane pore size, porosity, and surface roughness after incorporation of SiO2 particles had encountered more serious relative flux reduction and lower flux recovery ratio.

Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Park, K. W.; Krivoy, E. M.; Nair, H. P.; Bank, S. R.; Yu, E. T.

2015-07-01

Scanning thermal microscopy has been implemented in a cross-sectional geometry, and its application for quantitative, nanoscale analysis of thermal conductivity is demonstrated in studies of an ErAs/GaAs nanocomposite superlattice. Spurious measurement effects, attributable to local thermal transport through air, were observed near large step edges, but could be eliminated by thermocompression bonding to an additional structure. Using this approach, bonding of an ErAs/GaAs superlattice grown on GaAs to a silicon-on-insulator wafer enabled thermal signals to be obtained simultaneously from Si, SiO2, GaAs, and ErAs/GaAs superlattice. When combined with numerical modeling, the thermal conductivity of the ErAs/GaAs superlattice measured using this approach was 11 ± 4 W m-1 K-1.

Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy.

PubMed

Park, K W; Krivoy, E M; Nair, H P; Bank, S R; Yu, E T

2015-07-03

Scanning thermal microscopy has been implemented in a cross-sectional geometry, and its application for quantitative, nanoscale analysis of thermal conductivity is demonstrated in studies of an ErAs/GaAs nanocomposite superlattice. Spurious measurement effects, attributable to local thermal transport through air, were observed near large step edges, but could be eliminated by thermocompression bonding to an additional structure. Using this approach, bonding of an ErAs/GaAs superlattice grown on GaAs to a silicon-on-insulator wafer enabled thermal signals to be obtained simultaneously from Si, SiO2, GaAs, and ErAs/GaAs superlattice. When combined with numerical modeling, the thermal conductivity of the ErAs/GaAs superlattice measured using this approach was 11 ± 4 W m(-1) K(-1).

Fission fragment angular distributions in the reactions {sup 16}O+{sup 188}Os and {sup 28}Si+{sup 176}Yb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathi, R.; Sudarshan, K.; Sharma, S. K.

2009-06-15

Fission fragment angular distributions have been measured in the reactions {sup 16}O+{sup 188}Os and {sup 28}Si+{sup 176}Yb to investigate the contribution from noncompound nucleus fission. Parameters for statistical model calculations were fixed using fission cross section data in the {sup 16}O+{sup 188}Os reaction. Experimental anisotropies were in reasonable agreement with those calculated using the statistical saddle point model for both reactions. The present results are also consistent with those of mass distribution studies in the fission of {sup 202}Po, formed in the reactions with varying entrance channel mass asymmetry. However, the present studies do not show a large fusion hindrancemore » as reported in the pre-actinide region based on the measurement of evaporation residue cross section.« less

Study of Heavy-ion Induced Fission for Heavy Element Synthesis

NASA Astrophysics Data System (ADS)

Nishio, K.; Ikezoe, H.; Hofmann, S.; Ackermann, D.; Aritomo, Y.; Comas, V. F.; Düllmann, Ch. E.; Heinz, S.; Heredia, J. A.; Heßberger, F. P.; Hirose, K.; Khuyagbaatar, J.; Kindler, B.; Kojouharov, I.; Lommel, B.; Makii, M.; Mann, R.; Mitsuoka, S.; Nishinaka, I.; Ohtsuki, T.; Saro, S.; Schädel, M.; Popeko, A. G.; Türler, A.; Wakabayashi, Y.; Watanabe, Y.; Yakushev, A.; Yeremin, A.

2014-05-01

Fission fragment mass distributions were measured in heavy-ion induced fission of 238U. The mass distributions changed drastically with incident energy. The results are explained by a change of the ratio between fusion and quasifission with nuclear orientation. A calculation based on a fluctuation dissipation model reproduced the mass distributions and their incident energy dependence. Fusion probability was determined in the analysis. Evaporation residue cross sections were calculated with a statistical model for the reactions of 30Si+238U and 34S+238U using the obtained fusion probability in the entrance channel. The results agree with the measured cross sections of 263,264Sg and 267,268Hs, produced by 30Si+238U and 34S+238U, respectively. It is also suggested that sub-barrier energies can be used for heavy element synthesis.

Model-independent analyses of dark-matter particle interactions

DOE PAGES

Anand, Nikhil; Fitzpatrick, A. Liam; Haxton, W. C.

2015-03-24

A model-independent treatment of dark-matter particle elastic scattering has been developed, yielding the most general interaction for WIMP-nucleon low-energy scattering, and the resulting amplitude has been embedded into the nucleus, taking into account the selection rules imposed by parity and time-reversal. One finds that, in contrast to the usual spin-independent/spin-dependent (SI/SD) formulation, the resulting cross section contains six independent nuclear response functions, three of which are associated with possible velocity-dependent interactions. We find that current experiments are four orders of magnitude more sensitive to derivative couplings than is apparent in the standard SI/SD treatment, which necessarily associated such interactions withmore » cross sections proportional to v 2 T ~ 10⁻⁶, where v T is the WIMP velocity relative to the center of mass of the nuclear target.« less

Optical model calculations of 14.6A GeV silicon fragmentation cross sections

NASA Technical Reports Server (NTRS)

Townsend, Lawrence W.; Khan, Ferdous; Tripathi, Ram K.

1993-01-01

An optical potential abrasion-ablation collision model is used to calculate hadronic dissociation cross sections for a 14.6 A GeV(exp 28) Si beam fragmenting in aluminum, tin, and lead targets. The frictional-spectator-interaction (FSI) contributions are computed with two different formalisms for the energy-dependent mean free path. These estimates are compared with experimental data and with estimates obtained from semi-empirical fragmentation models commonly used in galactic cosmic ray transport studies.

Spectral studies of SiCl4 + N2O + Ar and SiH4 + Ar mixtures in a shock tube in 160-550 nm range

NASA Technical Reports Server (NTRS)

Park, C.; Fujiwara, T.

1978-01-01

Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.

A Physics-Based Engineering Methodology for Calculating Soft Error Rates of Bulk CMOS and SiGe Heterojunction Bipolar Transistor Integrated Circuits

NASA Astrophysics Data System (ADS)

Fulkerson, David E.

2010-02-01

This paper describes a new methodology for characterizing the electrical behavior and soft error rate (SER) of CMOS and SiGe HBT integrated circuits that are struck by ions. A typical engineering design problem is to calculate the SER of a critical path that commonly includes several circuits such as an input buffer, several logic gates, logic storage, clock tree circuitry, and an output buffer. Using multiple 3D TCAD simulations to solve this problem is too costly and time-consuming for general engineering use. The new and simple methodology handles the problem with ease by simple SPICE simulations. The methodology accurately predicts the measured threshold linear energy transfer (LET) of a bulk CMOS SRAM. It solves for circuit currents and voltage spikes that are close to those predicted by expensive 3D TCAD simulations. It accurately predicts the measured event cross-section vs. LET curve of an experimental SiGe HBT flip-flop. The experimental cross section vs. frequency behavior and other subtle effects are also accurately predicted.

Coupling of semiconductor nanowires with neurons and their interfacial structure.

PubMed

Lee, Ki-Young; Shim, Sojung; Kim, Il-Soo; Oh, Hwangyou; Kim, Sunoh; Ahn, Jae-Pyeong; Park, Seung-Han; Rhim, Hyewhon; Choi, Heon-Jin

2009-12-04

We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

Microstructures of BN/SiC coatings on nicalon fibers

NASA Technical Reports Server (NTRS)

Dickerson, R. M.; Singh, M.

1995-01-01

The microstructures of Nicalon silicon carbide (SiC) fibers and layered coatings of boron nitride (BN) followed by chemical vapor infiltrated silicon carbide (CVI-SiC) were characterized using optical and electron microscopy. Two different precursors and reactions were used to produce the BN layers while the deposition of CVI silicon carbide was nearly identical. Coated tows were examined in cross-section to characterize the chemistry and structures of the constituents and the interfaces. One BN precursor yielded three sublayers while the other gave a relatively homogeneous nanocrystalline layer.

Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

NASA Astrophysics Data System (ADS)

Hatayama, Tomoaki; Tamura, Tetsuya; Yano, Hiroshi; Fuyuki, Takashi

2012-07-01

The etch pit shape of an off-angled 4H-SiC Si-face formed by chlorine trifluoride (ClF3) in nitrogen (N2) ambient has been studied. One type of etch pit with a crooked hexagonal shape was formed at an etching temperature below 500 °C. The angle of the etch pit measured from a cross-sectional atomic force microscopy image was about 10° from the [11bar 20] view. The dislocation type of the etch pit was discussed in relation to the etch pit shape and an electron-beam-induced current image.

Experimental Study of Floating-Gate-Type Metal-Oxide-Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Guo, Ruofeng; Kamei, Takahiro; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Hayashida, Tetsuro; Sakamoto, Kunihiro; Ogura, Atsushi; Masahara, Meishoku

2012-06-01

The floating-gate (FG)-type metal-oxide-semiconductor (MOS) capacitors with planar (planar-MOS) and three-dimensional (3D) nanosize triangular cross-sectional tunnel areas (3D-MOS) have successfully been fabricated by introducing rapid thermal oxidation (RTO) and postdeposition annealing (PDA), and their electrical characteristics between the control gate (CG) and FG have been systematically compared. It was experimentally found in both planar- and 3D-MOS capacitors that the uniform and higher breakdown voltages are obtained by introducing RTO owing to the high-quality thermal oxide formation on the surface and etched edge regions of the n+ polycrystalline silicon (poly-Si) FG, and the leakage current is highly suppressed after PDA owing to the improved quality of the tetraethylorthosilicate (TEOS) silicon dioxide (SiO2) between CG and FG. Moreover, a lower breakdown voltage between CG and FG was obtained in the fabricated 3D-MOS capacitors as compared with that of planar-MOS capacitors thanks to the enhanced local electric field at the tips of triangular tunnel areas. The developed nanosize triangular cross-sectional tunnel area is useful for the fabrication of low operating voltage flash memories.

Robust mode space approach for atomistic modeling of realistically large nanowire transistors

NASA Astrophysics Data System (ADS)

Huang, Jun Z.; Ilatikhameneh, Hesameddin; Povolotskyi, Michael; Klimeck, Gerhard

2018-01-01

Nanoelectronic transistors have reached 3D length scales in which the number of atoms is countable. Truly atomistic device representations are needed to capture the essential functionalities of the devices. Atomistic quantum transport simulations of realistically extended devices are, however, computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost, but a good MS basis is usually very hard to obtain for atomistic full-band models. In this work, a robust and parallel algorithm is developed to optimize the MS basis for atomistic nanowires. This enables engineering-level, reliable tight binding non-equilibrium Green's function simulation of nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) with a realistic cross section of 10 nm × 10 nm using a small computer cluster. This approach is applied to compare the performance of InGaAs and Si nanowire n-type MOSFETs (nMOSFETs) with various channel lengths and cross sections. Simulation results with full-band accuracy indicate that InGaAs nanowire nMOSFETs have no drive current advantage over their Si counterparts for cross sections up to about 10 nm × 10 nm.

Theoretical and Experimental K+ + Nucleus Total and Reaction Cross Sections from the KDP-RIA Model

NASA Astrophysics Data System (ADS)

Kerr, L. K.; Clark, B. C.; Hama, S.; Ray, L.; Hoffmann, G. W.

2000-02-01

The 5-dimensional spin-0 form of the Kemmer-Duffin-Petiau (KDP) equation is used to calculate scattering observables [elastic differential cross sections (dσ / dΩ), total cross sections (σ Tot ), and total reaction cross sections (σ Reac )] and to deduce σ Tot and σReac from transmission data for K+ + 6Li, 12C, 28Si and 40Ca at several momenta in the range 488 - 714 MeV / c. Realistic uncertainties are generated for the theoretical predictions. These errors, mainly due to uncertainties associated with the elementary K+ + nucleon amplitudes, are large, which may account for some of the disagreement between experimental and theoretical σTot and σReac. The results suggest that the K+ + nucleon amplitudes need to be much better determined before further improvement in the understanding of these data can occur.

Insomnia and hypnotic medications are associated with suicidal ideation in a community population.

PubMed

Pigeon, Wilfred R; Woosley, Julie A; Lichstein, Kenneth L

2014-01-01

Suicidal ideation (SI), a significant predictor of suicide, is associated with sleep disturbance, which is seldom assessed using stringent diagnostic criteria and validated sleep instruments in community samples. Cross-sectional data, including sleep diaries and validated instruments, from 767 community adults were used to identify variables associated with SI and subsequently entered into a regression model to predict SI. Suicidal ideation was endorsed by 9.3% of the sample. This group differed from non-ideators on several variables, but only insomnia diagnosis, depression severity, and hypnotic medication use predicted SI. Findings confirm an association of insomnia with SI using stringent criteria and controlling for depression. If treating insomnia is a conceivable pathway to reduce SI, the apparent risk posed by hypnotics may limit treatment options.

Laboratory Studies in UV and EUV Solar Physics

NASA Technical Reports Server (NTRS)

Wagner, William J. (Technical Monitor); Kohl, John L.

2005-01-01

A new 5 GHZ Electron Cyclotron Resonance (ECR) ion source for SAO's Ion Beam Experiment was designed, built and tested. Absolute cross sections were measured for electron impact excitation (EIE) in C(2+) (2s2p (3)P(sup o) - 2p(sup 2) (3)P), and empirical EIE rate coefficients were derived. The absolute cross section for EIE in Si(2+) (3s3p (3)P(sup o) - 3s3p (1)P(sup o)) was measured, and our experimental values for absolute cross sections for EIE in C(3+) (2s (2)S - 2p (2)P(sup o)) were reanalyzed and compared to values obtained by other experimental methods and by theory. In addition, a paper was published. The development and testing of the new ion source, the Si(2+) EIE measurements, and the reevaluation of the cross sections for C(3+) resulted from the Ph.D. research of Paul H. Janzen who completed the degree requirements for the Harvard University Department of Physics in 2002. John Kohl served as the Ph.D.Thesis Advisor. Because of delays in bringing the new ion source on line, the measurements of EIE in C(2+) (2s2p (3)P(sup o) - (2)p(sup 2) (3)P) were not completed until 2004. Preparations for measurements of EIE in C(2+) (1s(sup 2) (1)S - 2s2p (1)P(sup o)) are currently underway.

Effect of Convection Associated with Cross-section Change during Directional Solidification of Binary Alloys on Dendritic Array Morphology and Macrosegregation

NASA Astrophysics Data System (ADS)

Ghods, Masoud

This dissertation explores the role of different types of convection on macrosegregation and on dendritic array morphology of two aluminum alloys directionally solidified through cylindrical graphite molds having both cross-section decrease and increase. Al- 19 wt. % Cu and Al-7 wt. % Si alloys were directionally solidified at two growth speed of 10 and 29.1 mum s-1 and examined for longitudinal and radial macrosegregation, and for primary dendrite spacing and dendrite trunk diameter. Directional solidification of these alloys through constant cross-section showed clustering of primary dendrites and parabolic-shaped radial macrosegregation profile, indicative of "steepling convection" in the mushy-zone. The degree of radial macrosegregation increased with decreased growth speed. The Al- 19 wt. % Cu samples, grown under similar conditions as Al-7 wt. % Si, showed more radial macrosegregation because of more intense "stepling convection" caused by their one order of magnitude larger coefficient of solutal expansion. Positive macrosegregation right before, followed by negative macrosegregation right after an abrupt cross-section decrease (from 9.5 mm diameter to 3.2 mm diameter), were observed in both alloys; this is because of the combined effect of thermosolutal convection and area-change-driven shrinkage flow in the contraction region. The degree of macrosegregation was found to be higher in the Al- 19 wt. % Cu samples. Strong area-change-driven shrinkage flow changes the parabolic-shape radial macrosegregation in the larger diameter section before contraction to "S-shaped" profile. But in the smaller diameter section after the contraction very low degree of radial macrosegregation was found. The samples solidified through an abrupt cross-section increase (from 3.2 mm diameter to 9.5 mm diameter) showed negative macrosegregation right after the cross-section increase on the expansion platform. During the transition to steady-state after the expansion, radial macrosegregation profile in locations close to the expansion was found to be "S-shaped". This is attributed to the redistribution of solute-rich liquid ahead of the mushy-zone as it transitions from the narrow portion below into the large diameter portion above. Solutal remelting and fragmentation of dendrite branches, and floating of these fragmented pieces appear to be responsible for spurious grains formation in Al- 19 wt. % Cu samples after the cross-section expansion. New grain formation was not observed in Al-7 wt. % Si in similar locations; it is believed that this is due to the sinking of the fragmented dendrite branches in this alloy. Experimentally observed radial and axial macrosegregations agree well with the results obtained from the numerical simulations carried out by Dr. Mark Lauer and Prof. David R. Poirier at the University of Arizona. Trunk Diameter (TD) of dendritic array appears to respond more readily to the changing growth conditions as compared to the Nearest Neighbor Spacing (NNS) of primary dendrites.

Fusion-fission Study at JAEA for Heavy-element Synthesis

NASA Astrophysics Data System (ADS)

Nishio, K.

Fission fragment mass distributions were measured in the heavy-ion induced fission using 238U target nucleus. The mass distribu- tions changed drastically with incident energy. The results are explained by a change of the ratio between fusion and qasifission with nuclear orientation. A calculation based on a fluctuation dissipation model reproduced the mass distributions and their inci- dent energy dependence. Fusion probability was determined in the analysis. Evaporation residue cross sections were calculated with a statistical model in the reactions of 30Si+238U and 34S+238U using the obtained fusion probability in the entrance channel. The results agree with the measured cross sections of 263,264Sg and 267,268Hs, produced by 30Si+238U and 34S+238U, respectively. It is also suggested that the sub-barrier energies can be used for heavy element synthesis.

In-beam fissio study at JAEA for heavy element synthesis

NASA Astrophysics Data System (ADS)

Nishio, K.; Ikezoe, H.; Hofmann, S.; Ackermann, D.; Aritomo, Y.; Comas, V. F.; Düllmann, Ch. E.; Heinz, S.; Heredia, J. A.; Heßberger, F. P.; Hirose, K.; Khuyagbaatar, J.; Kindler, B.; Kojouharov, I.; Lommel, B.; Makii, M.; Mann, R.; Mitsuoka, S.; Nishinaka, I.; Ohtsuki, T.; Saro, S.; Schädel, M.; Popeko, A. G.; Türler, A.; Wakabayashi, Y.; Watanabe, Y.; Yakushev, A.; Yeremin, A.

2013-04-01

Fission fragment mass distributions were measured in the heavy-ion induced fission using 238U target nucleus. The mass distributions changed drastically with incident energy. The results are explained by a change of the ratio between fusion and qasifission with nuclear orientation. A calculation based on a fluctuation dissipation model reproduced the mass distributions and their incident energy dependence. Fusion probability was determined in the analysis. Evaporation residue cross sections were calculated with a statistical model in the reactions of 30Si+238U and 34S+238U using the obtained fusion probability in the entrance channel. The results agree with the measured cross sections of 263,264Sg and 267,268Hs, produced by 30Si+238U and 34S+238U, respectively. It is also suggested that the sub-barrier energies can be used for heavy element synthesis.

Photodecomposition of Mo(CO)/sub 6/ adsorbed on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Creighton, J.R.

1986-01-15

The photochemical properties of Mo(CO)/sub 6/ adsorbed on Si(100) were investigated using temperature programmed desorption (TPD) and Auger spectroscopy. TPD experiments indicate that Mo(CO)/sub 6/ physisorbs on silicon and desorbs at 210--230 K. At 150 K, KrF laser radiation (248 nm) partially decomposes the adsorbed Mo(CO)/sub 6/ releasing gas-phase CO in the process and TPD experiments after irradiation show that additional CO desorbs at 335 K. However, Auger analysis indicates that one CO molecule per molybdenum atom dissociates, leaving the molybdenum overlayer heavily contaminated with carbon and oxygen. The cross section for photodecomposition was measured to be 5 +- 3more » x 10/sup -17/ cm/sup 2/. Decomposition of the excited molecule must compete strongly with energy relaxation to account for the magnitude of this cross section.« less

Cross-Section Measurements of the Kr86(γ,n) Reaction to Probe the s-Process Branching at Kr85

NASA Astrophysics Data System (ADS)

Raut, R.; Tonchev, A. P.; Rusev, G.; Tornow, W.; Iliadis, C.; Lugaro, M.; Buntain, J.; Goriely, S.; Kelley, J. H.; Schwengner, R.; Banu, A.; Tsoneva, N.

2013-09-01

We have carried out photodisintegration cross-section measurements on Kr86 using monoenergetic photon beams ranging from the neutron separation energy, Sn=9.86MeV, to 13 MeV. We combine our experimental Kr86(γ,n)Kr85 cross section with results from our recent Kr86(γ,γ') measurement below the neutron separation energy to obtain the complete nuclear dipole response of Kr86. The new experimental information is used to predict the neutron capture cross section of Kr85, an important branching point nucleus on the abundance flow path during s-process nucleosynthesis. Our new and more precise Kr85(n,γ)Kr86 cross section allows us to produce more precise predictions of the Kr86 abundance from s-process models. In particular, we find that the models of the s process in asymptotic giant branch stars of mass <1.5M⊙, where the C13 neutron source burns convectively rather than radiatively, represent a possible solution for the highest Kr86∶Kr82 ratios observed in meteoritic stardust SiC grains.

Cross-section measurements of the 86Kr(γ,n) reaction to probe the s-process branching at 85Kr.

PubMed

Raut, R; Tonchev, A P; Rusev, G; Tornow, W; Iliadis, C; Lugaro, M; Buntain, J; Goriely, S; Kelley, J H; Schwengner, R; Banu, A; Tsoneva, N

2013-09-13

We have carried out photodisintegration cross-section measurements on 86Kr using monoenergetic photon beams ranging from the neutron separation energy, S(n) = 9.86  MeV, to 13 MeV. We combine our experimental 86Kr(γ,n)85Kr cross section with results from our recent 86Kr(γ,γ') measurement below the neutron separation energy to obtain the complete nuclear dipole response of 86Kr. The new experimental information is used to predict the neutron capture cross section of 85Kr, an important branching point nucleus on the abundance flow path during s-process nucleosynthesis. Our new and more precise 85Kr(n,γ)86Kr cross section allows us to produce more precise predictions of the 86Kr abundance from s-process models. In particular, we find that the models of the s process in asymptotic giant branch stars of mass <1.5M⊙, where the 13C neutron source burns convectively rather than radiatively, represent a possible solution for the highest 86Kr:82Kr ratios observed in meteoritic stardust SiC grains.

Ionization cross sections of the Au L subshells by electron impact from the L3 threshold to 100 keV

NASA Astrophysics Data System (ADS)

Barros, Suelen F.; Vanin, Vito R.; Maidana, Nora L.; Martins, Marcos N.; García-Alvarez, Juan A.; Santos, Osvaldo C. B.; Rodrigues, Cleber L.; Koskinas, Marina F.; Fernández-Varea, José M.

2018-01-01

We measured the cross sections for Au Lα, Lβ, Lγ, Lℓ and Lη x-ray production by the impact of electrons with energies from the L3 threshold to 100 keV using a thin Au film whose mass thickness was determined by Rutherford Backscattering Spectrometry. The x-ray spectra were acquired with a Si drift detector, which allowed to separate the components of the Lγ multiplet lines. The measured Lα, Lβ, {{L}}{γ }1, L{γ }{2,3,6}, {{L}}{γ }{4,4\\prime }, {{L}}{γ }5, {{L}}{\\ell } and Lη x-ray production cross sections were then employed to derive Au L1, L2 and L3 subshell ionization cross sections with relative uncertainties of 8%, 7% and 7%, respectively; these figures include the uncertainties in the atomic relaxation parameters. The correction for the increase in electron path length inside the Au film was estimated by means of Monte Carlo simulations. The experimental ionization cross sections are about 10% above the state-of-the-art distorted-wave calculations.

Fusion hindrance for the positive Q -value system 12C+30Si

NASA Astrophysics Data System (ADS)

Montagnoli, G.; Stefanini, A. M.; Jiang, C. L.; Hagino, K.; Galtarossa, F.; Colucci, G.; Bottoni, S.; Broggini, C.; Caciolli, A.; Čolović, P.; Corradi, L.; Courtin, S.; Depalo, R.; Fioretto, E.; Fruet, G.; Gal, A.; Goasduff, A.; Heine, M.; Hu, S. P.; Kaur, M.; Mijatović, T.; Mazzocco, M.; Montanari, D.; Scarlassara, F.; Strano, E.; Szilner, S.; Zhang, G. X.

2018-02-01

Background: The fusion reaction 12C+30Si is a link between heavier cases studied in recent years, and the light heavy-ion systems, e.g., 12C+12C , 16O+16O that have a prominent role in the dynamics of stellar evolution. 12C+30Si fusion itself is not a relevant process for astrophysics, but it is important to establish its behavior below the barrier, where couplings to low-lying collective modes and the hindrance phenomenon may determine the cross sections. The excitation function is presently completely unknown below the barrier for the 12C+30Si reaction, thus no reliable extrapolation into the astrophysical regime for the C+C and O+O cases can be performed. Purpose: Our aim was to carry out a complete measurement of the fusion excitation function of 12C+30Si from well below to above the Coulomb barrier, so as to clear up the consequence of couplings to low-lying states of 30Si, and whether the hindrance effect appears in this relatively light system which has a positive Q value for fusion. This would have consequences for the extrapolated behavior to even lighter systems. Methods: The inverse kinematics was used by sending 30Si beams delivered from the XTU Tandem accelerator of INFN-Laboratori Nazionali di Legnaro onto thin 12C (50 μ g /cm2 ) targets enriched to 99.9 % in mass 12. The fusion evaporation residues (ER) were detected at very forward angles, following beam separation by means of an electrostatic deflector. Angular distributions of ER were measured at Ebeam=45 , 59, and 80 MeV, and they were angle integrated to derive total fusion cross sections. Results: The fusion excitation function of 12C+30Si was measured with high statistical accuracy, covering more than five orders of magnitude down to a lowest cross section ≃3 μ b . The logarithmic slope and the S factor have been extracted and we have convincing phenomenological evidence of the hindrance effect. These results have been compared with the calculations performed within the model that considers a damping of the coupling strength well inside the Coulomb barrier. Conclusions: The experimental data are consistent with the coupled-channels calculations. A better fit is obtained by using the Yukawa-plus-exponential potential and a damping of the coupling strengths inside the barrier. The degree of hindrance is much smaller than the one in heavier systems. Also a phenomenological estimate reproduces quite closely the hindrance threshold for 12C+30Si , so that an extrapolation to the C+C and O+O cases can be reliably performed.

Farbrication of diffractive optical elements on a Si chip by an imprint lithography using nonsymmetrical silicon mold

NASA Astrophysics Data System (ADS)

Hirai, Yoshihiko; Okano, Masato; Okuno, Takayuki; Toyota, Hiroshi; Yotsuya, Tsutomu; Kikuta, Hisao; Tanaka, Yoshio

2001-11-01

Fabrication of a fine diffractive optical element on a Si chip is demonstrated using imprint lithography. A chirped diffraction grating, which has modulated pitched pattern with curved cross section is fabricated by an electron beam lithography, where the exposure dose profile is automatically optimized by computer aided system. Using the resist pattern as an etching mask, anisotropic dry etching is performed to transfer the resist pattern profile to the Si chip. The etched Si substrate is used as a mold in the imprint lithography. The Si mold is pressed to a thin polymer (poly methyl methacrylate) on a Si chip. After releasing the mold, a fine diffractive optical pattern is successfully transferred to the thin polymer. This method is exceedingly useful for fabrication of integrated diffractive optical elements with electric circuits on a Si chip.

Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing.

PubMed

Wen, C; Wan, W; Li, F H; Tang, D

2015-04-01

The [110] cross-sectional samples of 3C-SiC/Si (001) were observed with a spherical aberration-corrected 300 kV high-resolution transmission electron microscope. Two images taken not close to the Scherzer focus condition and not representing the projected structures intuitively were utilized for performing the deconvolution. The principle and procedure of image deconvolution and atomic sort recognition are summarized. The defect structure restoration together with the recognition of Si and C atoms from the experimental images has been illustrated. The structure maps of an intrinsic stacking fault in the area of SiC, and of Lomer and 60° shuffle dislocations at the interface have been obtained at atomic level. Copyright © 2015 Elsevier Ltd. All rights reserved.

La 137 , 138 , 139 ( n , γ ) cross sections constrained with statistical decay properties of La 138 , 139 , 140 nuclei

DOE PAGES

Kheswa, B. V.; Wiedeking, M.; Brown, J. A.; ...

2017-04-21

The nuclear level densities and γ-ray strength functions of 138,139,140La were measured using the 139La( 3He,α), 139La( 3He,' 3He), and 139La(d,p) reactions. The particle-γ coincidences were recorded with the silicon particle telescope (SiRi) and NaI(Tl) (CACTUS) arrays. In the context of these experimental results, the low-energy enhancement in the A~140 region is discussed. The 137,138,139La(n,γ) cross sections were calculated at s- and p-process temperatures using the experimentally measured nuclear level densities and γ-ray strength functions. As a result, good agreement is found between 139La(n,γ) calculated cross sections and previous measurements.

La 137 , 138 , 139 ( n , γ ) cross sections constrained with statistical decay properties of La 138 , 139 , 140 nuclei

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kheswa, B. V.; Wiedeking, M.; Brown, J. A.

The nuclear level densities and γ-ray strength functions of 138,139,140La were measured using the 139La( 3He,α), 139La( 3He,' 3He), and 139La(d,p) reactions. The particle-γ coincidences were recorded with the silicon particle telescope (SiRi) and NaI(Tl) (CACTUS) arrays. In the context of these experimental results, the low-energy enhancement in the A~140 region is discussed. The 137,138,139La(n,γ) cross sections were calculated at s- and p-process temperatures using the experimentally measured nuclear level densities and γ-ray strength functions. As a result, good agreement is found between 139La(n,γ) calculated cross sections and previous measurements.

137,138,139La(n ,γ ) cross sections constrained with statistical decay properties of 138,139,140La nuclei

NASA Astrophysics Data System (ADS)

Kheswa, B. V.; Wiedeking, M.; Brown, J. A.; Larsen, A. C.; Goriely, S.; Guttormsen, M.; Bello Garrote, F. L.; Bernstein, L. A.; Bleuel, D. L.; Eriksen, T. K.; Giacoppo, F.; Görgen, A.; Goldblum, B. L.; Hagen, T. W.; Koehler, P. E.; Klintefjord, M.; Malatji, K. L.; Midtbø, J. E.; Nyhus, H. T.; Papka, P.; Renstrøm, T.; Rose, S. J.; Sahin, E.; Siem, S.; Tornyi, T. G.

2017-04-01

The nuclear level densities and γ -ray strength functions of 138,139,140La were measured using the 139La(3He,α ), 139La(3He,3He' ), and 139La(d ,p ) reactions. The particle-γ coincidences were recorded with the silicon particle telescope (SiRi) and NaI(Tl) (CACTUS) arrays. In the context of these experimental results, the low-energy enhancement in the A ˜140 region is discussed. The 137,138,139La (n ,γ ) cross sections were calculated at s - and p -process temperatures using the experimentally measured nuclear level densities and γ -ray strength functions. Good agreement is found between 139La(n ,γ ) calculated cross sections and previous measurements.

Probing neutron-skin thickness with total reaction cross sections

NASA Astrophysics Data System (ADS)

Horiuchi, W.; Suzuki, Y.; Inakura, T.

2014-01-01

We analyze total reaction cross sections, σR, to explore their sensitivity to the neutron-skin thickness of nuclei. We cover 91 nuclei of O, Ne, Mg, Si, S, Ca, and Ni isotopes. The cross sections are calculated in the Glauber theory using the density distributions obtained with the Skyrme-Hartree-Fock method in three-dimensional coordinate space. Defining a reaction radius, aR=√σR/π , to characterize the nuclear size and target (proton or 12C) dependence, we find an empirical formula for expressing aR with the point matter radius and the skin thickness, and assess two practical ways of determining the skin thickness from proton-nucleus σR values measured at different energies or from σR values measured for different targets.

Electrical properties of grain boundaries and dislocations in crystalline silicon: Influence of impurity incorporation and hydrogenation

NASA Astrophysics Data System (ADS)

Park, Yongkook

This thesis examines the electrical properties of grain boundaries (GBs) and dislocations in crystalline silicon. The influence of impurity incorporation and hydrogenation on the electrical properties of grain boundaries , as well as the electrical activity of impurity decorated dislocations and the retention of impurities at dislocations at high temperatures have been investigated. The electrical properties of Si GB were examined by C-V, J-V , and capacitance transient methods using aluminum/Si(100)/Si(001) junctions. First, the density of states and the carrier capture cross-sections of the clean GB were evaluated by C-V/J-V analyses. The density of GB states was determined as 4.0x1012 cm-2eV -1. It was found that the states close to the valance band edge have relatively smaller hole capture cross sections than those at higher energy position, and electron capture cross sections are at least two or three orders larger than the corresponding hole capture cross sections. Secondly, the influence of iron contamination and hydrogenation following iron contamination on the electrical properties of (110)/(001) Si GB was characterized by a capacitance transient technique. Compared with the clean sample, iron contamination increased both the density of states by at least three times and the zero-bias barrier height by 70 meV, while reducing by two orders of magnitude the electron/hole capture cross-section ratio. Hydrogenation following iron contamination led to the reduction of the density of Fe-decorated GB states, which was increased to over 2x1013 cm-2eV-1 after iron contamination, to ˜1x1013 cm-2 eV-1 after hydrogenation treatment. The increased zero-bias GB energy barrier due to iron contamination was reversed as well by hydrogen treatment. The density of GB states before and after hydrogenation was evaluated by J-V, C-V and capacitance transient methods using gold/direct-silicon-bonded (DSB) (110) thin silicon top layer/(100) silicon substrate junctions. The GB potential energy barrier in thermal equilibrium was reduced by 70 meV. Whereas the clean sample had a density of GB states of ˜6x1012 cm-2eV-1 in the range of Ev+0.54˜0.64 eV, hydrogenation reduced the density of GB states to ˜9x1011 cm-2eV -1 in the range of Ev+0.56˜0.61 eV, which is about a seven-fold reduction from that of the clean sample. Segregation and thermal dissociation kinetics of hydrogen at a large-angle general GB in crystalline silicon have been investigated using deuterium as a readily identifiable isotope which duplicates hydrogen chemistry. Segregation or trapping of deuterium (hydrogen) introduced was found to take place at (110)/(001) Si GB. The segregation coefficient (k) of deuterium (hydrogen) at GB was determined as k≈24+/-3 at 100°C. Thermal dissociation of deuterium (hydrogen) from GB obeyed first-order kinetics with an activation energy of ˜1.62 eV. The electrical activities of dislocations in a SiGe/Si heterostructure were examined by deep level transient spectroscopy (DLTS) after iron contamination and phosphorous diffusion gettering. DLTS of iron contaminated samples revealed a peak at 210 K, which was assigned to individual iron atoms or very small (<2 nm) precipitates decorated along dislocations. Arrhenius plot of the 210 K peak yielded a hole capture cross section of 2.4x10-14 cm2 and an energy level of 0.42 eV above the valance band. DLTS of the iron contaminated sample revealed that 6x10 14 cm-3 of boron can more effectively trap interstitial iron at room temperature than the strain field/defect sites at 107 ˜108 cm-2 dislocations. Phosphorous diffusion experiments revealed that the gettering efficiency of iron impurities depends on the dislocation density. For regions of high dislocation density, phosphorous diffusion cannot remove all iron impurities decorated at dislocations, suggesting a strong binding of iron impurities at dislocation core defects.

Macrosegregation Caused by Convection Associated with Directional Solidification through Cross-Section Change

NASA Technical Reports Server (NTRS)

Ghods, M.; Lauer, M.; Tewari, S. N.; Poirier, D. R..; Grugel, R. N.

2015-01-01

Al-7 wt% Si and Pb-6 wt% Sb alloy samples were directionally solidified (DS), with liquid above and solid below and gravity pointing down, in cylindrical graphite crucibles through an abrupt cross-section change. Fraction eutectic distribution in the microstructure, primary dendrite spacing and primary dendrite trunk diameters have been measured in the DS samples in the vicinity of section change in order to examine the effect of convection associated with the combined influence of thermosolutal factors and solidification shrinkage. It is observed that convection not only produces extensive radial and axial macrosegregation near cross-section change, it also affects the dendritic array morphology. Primary dendrite spacing and primary dendrite trunk diameter, both, are influenced by this convection. In addition to the experimental results, preliminary results from a numerical model which includes solidification shrinkage and thermosolutal convection in the mushy zone in its analysis will also be presented

Growth, characterization and device development in monocrystalline diamond films

NASA Astrophysics Data System (ADS)

Davis, R. F.; Glass, J. T.; Nemanich, R. J.; Bozeman, S. P.; Sowers, A. T.

1995-06-01

Experimental and theoretical studies concerned with interface interactions of diamond with Si, Ni, and Ni3Si substrates have been conducted. Oriented diamond films deposited on (100) Si were characterized by polar Raman, polar x-ray diffraction (XRD), and cross-sectional high resolution transmission electron microscopy (HRTEM). These sutides showed that the diamond(100)/Si(100) interface adopted the 3:2-match arrangement rather than a 45 deg rotation. Extended Hueckel tight-binding (EHTB) electronic structure calculations for a model system revealed that the interface interaction favors the 3:2-match arrangement. Growth on polycrystalline Ni3Si resulted in oriented diamond particles; under the same growth conditions, graphite was formed on the nickel substrate. Our EHTB electronic structure calculations showed that the (111) and (100) surfaces of Ni3Si have a strong preference for diamond nucleation over graphite nucleation, but this was not the case for the (111) and (100) surfaces of Ni.

Mode Transitions in Hall Effect Thrusters

DTIC Science & Technology

2013-07-01

Al2O3), silicon carbide ( SiC ) and graphite (C). The significant differences being ion bombardment sputter yield and secondary electron emission...channel cross-section is radially symmetric about ( mirrored above and below) discharge channel centerline from the anode to the exit plane, whereas

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

NASA Astrophysics Data System (ADS)

Imada, Kenta; Ishimaru, Manabu; Sato, Kazuhisa; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven; Weber, William J.

2015-10-01

Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.

Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface

NASA Astrophysics Data System (ADS)

Okada, Tatsuya; Tomita, Takuro; Ueki, Tomoyuki; Hashimoto, Takuya; Kawakami, Hiroki; Fuchikami, Yuki; Hisazawa, Hiromu; Tanaka, Yasuhiro

2018-01-01

We investigated low-temperature diffusion at the Ni/SiC interface with the assistance of femtosecond laser-induced modifications. Cross sections of the laser-irradiated lines of two different pulse energies — 0.84 and 0.60 J/cm2 in laser fluence — were compared before and after annealing at 673 K. At the laser fluence of 0.60 J/cm2, a single flat Ni-based particle was formed at the interface after annealing. The SiC crystal under the particle was defect-free. The present results suggest the potential application of femtosecond laser-induced modifications to the low-temperature fabrication of contacts at the interface without introducing crystal defects, e.g., dislocations and stacking faults, in SiC.

Isothermal and cyclic oxidation resistance of pack siliconized Mo-Si-B alloy

NASA Astrophysics Data System (ADS)

Majumdar, Sanjib

2017-08-01

Oxidation behaviour of MoSi2 coated Mo-9Si-8B-0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi2 layer during thermal cycling. The dominant oxidation mechanisms at 750-900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

Covariance propagation in spectral indices

DOE PAGES

Griffin, P. J.

2015-01-09

In this study, the dosimetry community has a history of using spectral indices to support neutron spectrum characterization and cross section validation efforts. An important aspect to this type of analysis is the proper consideration of the contribution of the spectrum uncertainty to the total uncertainty in calculated spectral indices (SIs). This study identifies deficiencies in the traditional treatment of the SI uncertainty, provides simple bounds to the spectral component in the SI uncertainty estimates, verifies that these estimates are reflected in actual applications, details a methodology that rigorously captures the spectral contribution to the uncertainty in the SI, andmore » provides quantified examples that demonstrate the importance of the proper treatment the spectral contribution to the uncertainty in the SI.« less

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

NASA Astrophysics Data System (ADS)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

The relationship of psychological trauma and dissociative and posttraumatic stress disorders to nonsuicidal self-injury and suicidality: a review.

PubMed

Ford, Julian D; Gómez, Jennifer M

2015-01-01

We reviewed research on the relationship between (a) exposure to psychological trauma and (b) nonsuicidal self-injury (NSSI) and suicidality (suicidal ideation [SI] and suicide attempts [SA]) in individuals with dissociative disorders and posttraumatic stress disorder (PTSD). The review provides a context for the special issue of the Journal of Trauma & Dissociation on these topics. Exposure to childhood sexual abuse is the most consistent traumatic antecedent of self-harm, although traumatic violence in childhood (particularly physical abuse) and adulthood (particularly domestic violence) and exposure to multiple types of traumatic stressors also are associated with NSSI and SI/SA. Dissociative disorders and PTSD are consistently associated with increased NSSI and SA/SI. There is preliminary cross-sectional evidence that dissociation and posttraumatic stress disorders may mediate the relationship between psychological trauma and NSSI and SI/SA. Research on emotion dysregulation as a potential cross-cutting mechanism linking dissociation, PTSD, and self-harm is also reviewed. We conclude with a discussion of implications for clinical practice and future directions for scientific research.

Comparison of Cyclic Hysteresis Behavior between Cross-Ply C/SiC and SiC/SiC Ceramic-Matrix Composites

PubMed Central

Li, Longbiao

2016-01-01

In this paper, the comparison of cyclic hysteresis behavior between cross-ply C/SiC and SiC/SiC ceramic-matrix composites (CMCs) has been investigated. The interface slip between fibers and the matrix existed in the matrix cracking mode 3 and mode 5, in which matrix cracking and interface debonding occurred in the 0° plies are considered as the major reason for hysteresis loops of cross-ply CMCs. The hysteresis loops of cross-ply C/SiC and SiC/SiC composites corresponding to different peak stresses have been predicted using present analysis. The damage parameter, i.e., the proportion of matrix cracking mode 3 in the entire matrix cracking modes of the composite, and the hysteresis dissipated energy increase with increasing peak stress. The damage parameter and hysteresis dissipated energy of C/SiC composite under low peak stress are higher than that of SiC/SiC composite; However, at high peak stress, the damage extent inside of cross-ply SiC/SiC composite is higher than that of C/SiC composite as more transverse cracks and matrix cracks connect together. PMID:28787861

Comparison of Cyclic Hysteresis Behavior between Cross-Ply C/SiC and SiC/SiC Ceramic-Matrix Composites.

PubMed

Li, Longbiao

2016-01-19

In this paper, the comparison of cyclic hysteresis behavior between cross-ply C/SiC and SiC/SiC ceramic-matrix composites (CMCs) has been investigated. The interface slip between fibers and the matrix existed in the matrix cracking mode 3 and mode 5, in which matrix cracking and interface debonding occurred in the 0° plies are considered as the major reason for hysteresis loops of cross-ply CMCs. The hysteresis loops of cross-ply C/SiC and SiC/SiC composites corresponding to different peak stresses have been predicted using present analysis. The damage parameter, i.e. , the proportion of matrix cracking mode 3 in the entire matrix cracking modes of the composite, and the hysteresis dissipated energy increase with increasing peak stress. The damage parameter and hysteresis dissipated energy of C/SiC composite under low peak stress are higher than that of SiC/SiC composite; However, at high peak stress, the damage extent inside of cross-ply SiC/SiC composite is higher than that of C/SiC composite as more transverse cracks and matrix cracks connect together.

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

NASA Astrophysics Data System (ADS)

Ohno, Yutaka; Yoshida, Hideto; Takeda, Seiji; Liang, Jianbo; Shigekawa, Naoteru

2018-02-01

The intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature is examined by plane-view transmission electron microscopy (TEM) and cross-sectional scanning TEM using damage-free TEM specimens prepared only by mechanochemical etching. The bonded heterointerfaces include an As-deficient crystalline GaAs layer with a thickness of less than 1 nm and an amorphous Si layer with a thickness of approximately 3 nm, introduced by the irradiation of an Ar atom beam for surface activation before bonding. It is speculated that the interface resistance mainly originates from the As-deficient defects in the former layer.

Unidirectional endotaxial cobalt di-silicide nanowires on Si(110) substrates

NASA Astrophysics Data System (ADS)

Mahato, J. C.; Das, Debolina; Banu, Nasrin; Satpati, Biswarup; Dev, B. N.

2017-10-01

Self-organized growth of well-ordered endotaxial silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). Co deposition on clean Si(110) reconstructed surfaces at ∼600 °C produces unidirectional CoSi2 NWs by reaction of cobalt with the hot silicon substrate. STM investigations reveal four major types of distinct NWs, all growing along the [-110] in-plane direction except one type growing along the in-plane [-113] direction. There are also some nanodots. The cross-sectional TEM measurements show that the unidirectional NWs are of two types—flat-top and ridged. The NWs grow not only on the substrate but also into the substrate. CoSi2 in flat top NWs are in the same crystallographic orientation as the substrate Si and the buried interfaces between CoSi2 and Si are A-type. In the ridged NWs CoSi2 and Si are in different crystallographic orientations and the interfaces are B-type. The ridged NWs are in general wider and grow deeper into the substrate.

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.

PubMed

Łaszcz, A; Katcki, J; Ratajczak, J; Tang, Xiaohui; Dubois, E

2006-10-01

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 degrees C, 525 degrees C and 600 degrees C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO(2)/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450-600 degrees C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 degrees C, the Pt top layer vanishes and a (Pt-Er)Si(x) system is formed.

Unidirectional endotaxial cobalt di-silicide nanowires on Si(110) substrates.

PubMed

Mahato, J C; Das, Debolina; Banu, Nasrin; Satpati, Biswarup; Dev, B N

2017-10-20

Self-organized growth of well-ordered endotaxial silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). Co deposition on clean Si(110) reconstructed surfaces at ∼600 °C produces unidirectional CoSi 2 NWs by reaction of cobalt with the hot silicon substrate. STM investigations reveal four major types of distinct NWs, all growing along the [-110] in-plane direction except one type growing along the in-plane [-113] direction. There are also some nanodots. The cross-sectional TEM measurements show that the unidirectional NWs are of two types-flat-top and ridged. The NWs grow not only on the substrate but also into the substrate. CoSi 2 in flat top NWs are in the same crystallographic orientation as the substrate Si and the buried interfaces between CoSi 2 and Si are A-type. In the ridged NWs CoSi 2 and Si are in different crystallographic orientations and the interfaces are B-type. The ridged NWs are in general wider and grow deeper into the substrate.

State-selective charge exchange in slow collisions of Si3+ ions with H atoms: A molecular state close coupling treatment*)

NASA Astrophysics Data System (ADS)

Joseph, Dwayne C.; Saha, Bidhan C.

2012-11-01

Charge transfer cross sections are calculated by employing both the quantal and semiclassical ɛ(R) molecular orbital close coupling (MOCC) approximations in the adiabatic representation and compared with other theoretical and experimental results

Charge transfer and ionization in collisions of Si3+ with H from low to high energy

NASA Astrophysics Data System (ADS)

Wang, J. G.; He, B.; Ning, Y.; Liu, C. L.; Yan, J.; Stancil, P. C.; Schultz, D. R.

2006-11-01

Charge transfer processes due to collisions of ground state Si3+(3sS1) ions with atomic hydrogen are investigated using the quantum-mechanical molecular-orbital close-coupling (MOCC) and classical-trajectory Monte Carlo (CTMC) methods. The MOCC calculations utilize ab initio adiabatic potentials and nonadiabatic radial coupling matrix elements obtained from Herrero [J. Phys. B 29, 5583 (1996)] which were calculated with a full configuration-interaction method. Total and state-selective single-electron capture cross sections are obtained for collision energies from 0.01eV/u to 1MeV/u . Total and state-selective rate coefficients are also presented for temperatures from 2×103K to 107K . Comparison with existing data reveals that the total CTMC cross sections are in good agreement with the experimental measurements at the higher considered energies and that previous Landau-Zener calculations underestimate the total rate coefficients by a factor of up to two. The CTMC calculations of target ionization are presented for high energies.

Quantitative hard x-ray phase contrast imaging of micropipes in SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohn, V. G.; Argunova, T. S.; Je, J. H., E-mail: jhje@postech.ac.kr

2013-12-15

Peculiarities of quantitative hard x-ray phase contrast imaging of micropipes in SiC are discussed. The micropipe is assumed as a hollow cylinder with an elliptical cross section. The major and minor diameters can be restored using the least square fitting procedure by comparing the experimental data, i.e. the profile across the micropipe axis, with those calculated based on phase contrast theory. It is shown that one projection image gives an information which does not allow a complete determination of the elliptical cross section, if an orientation of micropipe is not known. Another problem is a weak accuracy in estimating themore » diameters, partly because of using pink synchrotron radiation, which is necessary because a monochromatic beam intensity is not sufficient to reveal the weak contrast from a very small object. The general problems of accuracy in estimating the two diameters using the least square procedure are discussed. Two experimental examples are considered to demonstrate small as well as modest accuracies in estimating the diameters.« less

Microscopic analysis of irradiated AGR-1 coated particle fuel compacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scott A. Ploger; Paul A. Demkowicz; John D. Hunn

The AGR-1 experiment involved irradiation of 72 TRISO-coated particle fuel compacts to a peak compact-average burnup of 19.5% FIMA with no in-pile failures observed out of 3 x 105 total particles. Irradiated AGR-1 fuel compacts have been cross-sectioned and analyzed with optical microscopy to characterize kernel, buffer, and coating behavior. Six compacts have been examined, spanning a range of irradiation conditions (burnup, fast fluence, and irradiation temperature) and including all four TRISO coating variations irradiated in the AGR-1 experiment. The cylindrical specimens were sectioned both transversely and longitudinally, then polished to expose from 36 to 79 individual particles near midplanemore » on each mount. The analysis focused primarily on kernel swelling and porosity, buffer densification and fracturing, buffer–IPyC debonding, and fractures in the IPyC and SiC layers. Characteristic morphologies have been identified, 981 particles have been classified, and spatial distributions of particle types have been mapped. No significant spatial patterns were discovered in these cross sections. However, some trends were found between morphological types and certain behavioral aspects. Buffer fractures were found in 23% of the particles, and these fractures often resulted in unconstrained kernel protrusion into the open cavities. Fractured buffers and buffers that stayed bonded to IPyC layers appear related to larger pore size in kernels. Buffer–IPyC interface integrity evidently factored into initiation of rare IPyC fractures. Fractures through part of the SiC layer were found in only four classified particles, all in conjunction with IPyC–SiC debonding. Compiled results suggest that the deliberate coating fabrication variations influenced the frequencies of IPyC fractures and IPyC–SiC debonds.« less

Oxidation of Ultra-High Temperature Ceramics in Water Vapor

NASA Technical Reports Server (NTRS)

Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

2003-01-01

Ultra high temperature ceramics (UHTCs) including HfB2 + SiC (20% by volume), ZrB2 + SiC (20% by volume) and ZrB2 + SiC (14% by volume) + C (30% by volume) have historically been evaluated as reusable thermal protection systems for hypersonic vehicles. This study investigates UHTCs for use as potential combustion and aeropropulsion engine materials. These materials were oxidized in water vapor (90%) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 hours at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline comparison. Weight change measurements, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results will be compared with tests ran in static air at temperatures of 1327, 1627, and 1927 C. Oxidation comparisons will also be made to the study by Tripp. A small number of high pressure burner rig (HPBR) results at 1100 and 1300 C will also be discussed. Specific weight changes at all three temperatures along with the SIC results are shown. SiC weight change is negligible at such short duration times. HB2 + SiC (HS) performed the best out of all the tested UHTCS for all exposure temperatures. ZrB2 + Sic (ZS) results indicate a slightly lower oxidation rate than that of ZrBl + SiC + C (ZCS) at 1200 and 1400 C, but a clear distinction can not be made based on the limited number of tested samples. Scanning electron micrographs of the cross-sections of all the UHTCs were evaluated. A representative area for HS is presented at 1400 C for 26 hours which was the composition with the least amount of oxidation. A continuous SiO2 scale is present in the outer most edge of the surface. An image of ZCS is presented at 1400 C for 10 hours, which shows the most degradation of all the compositions studied. Here, the oxide surface is a mixture of ZrSiO4, ZrO2 and SO2.

Porous silicon formation during Au-catalyzed etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Algasinger, Michael; Bernt, Maximilian; Koynov, Svetoslav

2014-04-28

The formation of “black” nano-textured Si during the Au-catalyzed wet-chemical etch process was investigated with respect to photovoltaic applications. Cross-sectional scanning electron microscopy (SEM) images recorded at different stages of the etch process exhibit an evolution of a two-layer structure, consisting of cone-like Si hillocks covered with a nano-porous Si (np-Si) layer. Optical measurements confirm the presence of a np-Si phase which appears after the first ∼10 s of the etch process and continuously increases with the etch time. Furthermore, the etch process was investigated on Si substrates with different doping levels (∼0.01–100 Ω cm). SEM images show a transition frommore » the two-layer morphology to a structure consisting entirely of np-Si for higher doping levels (<0.1 Ω cm). The experimental results are discussed on the basis of the model of a local electrochemical etch process. A better understanding of the metal-catalyzed etch process facilitates the fabrication of “black” Si on various Si substrates, which is of significant interest for photovoltaic applications.« less

Dioxin-like compounds are not associated with bone strength measured by ultrasonography in Inuit women from Nunavik (Canada): results of a cross-sectional study.

PubMed

Paunescu, Alexandra-Cristina; Ayotte, Pierre; Dewailly, Eric; Dodin, Sylvie

2013-01-01

Bone strength in Inuit people appears lower than that of non-Aboriginals. Inuit are exposed to persistent organic pollutants including dioxin-like compounds (DLCs) through their traditional diet that comprises predatory fish and marine mammal fat. Results from experimental and population studies suggest that some DLCs can alter bone metabolism and increase bone fragility. This cross-sectional descriptive study was conducted to examine the relationship between the stiffness index (SI) and plasma concentrations of total DLCs or specific dioxin-like polychlorinated biphenyls (DL-PCBs) in Inuit women of Nunavik (Northern Quebec, Canada). SI was determined by ultrasonography at the right calcaneus of 194 Inuit women aged 35-72 years who participated to Qanuippitaa? How Are We? Nunavik Inuit Health Survey in 2004. Plasma total DLC levels were quantified by measuring the aryl hydrocarbon receptor-mediated transcriptional activity elicited by plasma sample extracts in a cell-based reporter gene assay. Plasma concentrations of DL-PCBs nos. 105, 118, 156, 157, 167 and 189 were measured by gas chromatography-mass spectrometry. We used multiple linear regression analyses to investigate relations between total DLCs or specific DL-PCBs and SI, taking into consideration several potential confounders. Neither total plasma DLCs nor specific DL-PCBs were associated with SI after adjustment for several confounders and covariates. Our results do not support a relation between exposure to DLCs and bone strength measured by ultrasonography in Inuit women of Nunavik.

Preparation and characterization of laser cladding wollastonite derived bioceramic coating on titanium alloy.

PubMed

Li, Huan-cai; Wang, Dian-gang; Chen, Chuan-zhong; Weng, Fei; Shi, Hua

2015-09-25

The bioceramic coating is fabricated on titanium alloy (Ti6Al4V) by laser cladding the preplaced wollastonite (CaSiO3) powders. The coating on Ti6Al4V is characterized by x-ray diffraction, scanning electron microscopy coupled with energy dispersive spectroscopy, and attenuated total reflection Fourier-transform infrared. The interface bonding strength is measured using the stretching method using an RGD-5-type electronic tensile machine. The microhardness distribution of the cross-section is determined using an indentation test. The in vitro bioactivity of the coating on Ti6Al4V is evaluated using the in vitro simulated body fluid (SBF) immersion test. The microstructure of the laser cladding sample is affected by the process parameters. The coating surface is coarse, accidented, and microporous. The cross-section microstructure of the ceramic layer from the bottom to the top gradually changes from cellular crystal, fine cellular-dendrite structure to underdeveloped dendrite crystal. The coating on Ti6Al4V is composed of CaTiO3, CaO, α-Ca2SiO4, SiO2, and TiO2. After soaking in the SBF solution, the calcium phosphate layer is formed on the coating surface.

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chin, Hock-Chun; Gong, Xiao; Yeo, Yee-Chia

Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAsmore » grown and the high growth selectivity of the MEE process.« less

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

DOE PAGES

Imada, Kenta; Ishimaru, Manabu; Sato, Kazuhisa; ...

2015-06-18

In this paper, nano-engineered 3C–SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. Finally, the resultant strain fieldmore » probably contributes to the enhancement of radiation tolerance of this material.« less

Nuclear data measurements at the new NFS facility at GANIL

NASA Astrophysics Data System (ADS)

Gustavsson, C.; Pomp, S.; Scian, G.; Lecolley, F.-R.; Tippawan, U.; Watanabe, Y.

2012-10-01

The NFS (Neutrons For Science) facility is part of the SPRIAL 2 project at GANIL, Caen, France. The facility is currently under construction and the first beam is expected in early 2013. NFS will have a white neutron source covering the 1-40 MeV energy range with a neutron flux higher than comparable facilities. A quasi-mono-energetic neutron beam will also be available. In these energy ranges, especially above 14 MeV, there is a large demand for neutron-induced data for a wide range of applications involving dosimetry, medical therapy, single-event upsets in electronics and nuclear energy. Today, there are a few or no cross section data on reactions such as (n, fission), (n, xn), (n, p), (n, d) and (n, α). We propose to install experimental equipment for measuring neutron-induced light-charged particle production and fission relative to the H(n, p) cross section. Both the H(n, p) cross section and the fission cross section for 238U are important reference cross sections used as standards for many other experiments. Nuclear data for certain key elements, such as closed shell nuclei, are also of relevance for the development of nuclear reaction models. Our primary intention is to measure charged particle production (protons, deuterons and alphas) from 12C, 16O, 28Si and 56Fe and neutron-induced fission cross sections from 238U and 232Th.

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

NASA Astrophysics Data System (ADS)

Schulze, C. S.; Huang, X.; Prohl, C.; Füllert, V.; Rybank, S.; Maddox, S. J.; March, S. D.; Bank, S. R.; Lee, M. L.; Lenz, A.

2016-04-01

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.

Associations between work stress and suicidal ideation: Individual-participant data from six cross-sectional studies.

PubMed

Loerbroks, Adrian; Cho, Sung-Il; Dollard, Maureen F; Zou, Jianfang; Fischer, Joachim E; Jiang, Yueying; Angerer, Peter; Herr, Raphael M; Li, Jian

2016-11-01

Epidemiological evidence suggests that work stress is associated with suicidal ideation (SI). However, only few studies in this area have drawn on well-established theoretical work stress models (i.e., the job-demand-control [JDC] model, the effort-reward-imbalance [ERI] model, and the model of organizational injustice [OJ]). Utilization of such models allows though for theory-based assessments and workplace interventions. Since evidence on those models' relationship with suicide-related outcomes is currently inconclusive (with regard to JDC), markedly sparse (OJ) or lacking (ERI), we aimed to provide additional or initial evidence. We drew on original data from six cross-sectional studies, which were conducted in four countries (i.e., South Korea, China, Australia, and Germany). Work stress was measured by established questionnaires and was categorized into tertiles. In each study, SI was assessed by either one or two items taken from validated scales. Associations of work stress with SI were estimated for each study and were pooled across studies using multivariate random-effects logistic modeling. In the pooled analyses (n=12,422) all three work stress models were significantly associated with SI with odds ratios fluctuating around 2. For instance, the pooled odds ratios for highest versus lowest work stress exposure in terms of job strain, OJ, and ERI equalled 1.91 (95% confidence interval [CI]=1.52, 2.41), 1.98 (95% CI=1.48, 2.65), and 2.77 (95% CI=1.57, 4.88), respectively. Patterns of associations were largely consistent across the individual studies. Our study provides robust evidence of a positive association between work stress and SI. Copyright © 2016 Elsevier Inc. All rights reserved.

Self-healing of cracks formed in Silicon-Aluminum anodes electrochemically cycled at high lithiation rates

NASA Astrophysics Data System (ADS)

Bhattacharya, Sandeep; Alpas, Ahmet T.

2016-10-01

Lithiation-induced volume changes in Si result in fracture and fragmentation of Si anodes in Li-ion batteries. This paper reports the self-healing behaviour of cracks observed in micron-sized Si particles dispersed in a ductile Al matrix of a Si-Al electrode electrochemically cycled vs. Li/Li+ using a high lithiation rate of 15.6 C. Cross-sectional high-resolution transmission electron microscopy and Raman spectroscopy revealed that an amorphous layer with a depth up to ∼100 nm was formed at the surface of Si particles. In-situ optical microscopy performed during electrochemical experiments revealed development of cracks in Si particles as the voltage decreased to 0.02 V during lithiation. Self-healing of cracks in Si particles occurred in two steps: i) arresting of the crack growth at the Si/Al interface as the surrounding Al matrix had a higher fracture toughness and thus acted as a barrier to crack propagation, and ii) closure of cracks due to compressive stresses applied to the crack faces by the amorphous zones formed on each side of the crack paths.

Catalyst shape engineering for anisotropic cross-sectioned nanowire growth

NASA Astrophysics Data System (ADS)

Calahorra, Yonatan; Kelrich, Alexander; Cohen, Shimon; Ritter, Dan

2017-01-01

The ability to engineer material properties at the nanoscale is a crucial prerequisite for nanotechnology. Hereunder, we suggest and demonstrate a novel approach to realize non-hemispherically shaped nanowire catalysts, subsequently used to grow InP nanowires with a cross section anisotropy ratio of up to 1:1.8. Gold was deposited inside high aspect ratio nanotrenches in a 5 nm thick SiNx selective area mask; inside the growth chamber, upon heating to 455 °C, the thin gold stripes agglomerated, resulting in an ellipsoidal dome (hemiellipsoid). The initial shape of the catalyst was preserved during growth to realize asymmetrically cross-sectioned nanowires. Moreover, the crystalline nature of the nanowire side facets was found to depend on the nano-trench orientation atop the substrate, resulting in hexagonal or octagonal cross-sections when the nano-trenches are aligned or misaligned with the [1¯10] orientation atop a [111]B substrate. These results establish the role of catalyst shape as a unique tool to engineer nanowire growth, potentially allowing further control over its physical properties.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lukyanov, V. K., E-mail: lukyanov@theor.jinr.ru; Zemlyanaya, E. V.; Lukyanov, K. V.

The folding-model optical potential is generalized in such a way as to apply it to calculating the cross sections for inelastic scattering of π{sup ±}-mesons on {sup 28}Si, {sup 40}Ca, {sup 58}Ni, and {sup 208}Pb nuclei at the energies of 162, 180, 226, and 291 MeV leading to the excitation of the 2{sup +} and 3{sup −} collective states. In doing this, use is made of known nucleon-density distributions in nuclei and the pion–nucleon scattering amplitude whose parameters were obtained previously by fitting the elastic scattering cross sections for the same nuclei. Thus, the values of quadrupole (β{sub 2}) andmore » octupole (β{sub 3}) deformations of nuclei appear here as the only adjustable parameters. The scattering cross section is calculated by solving the relativistic wave equation, whereby effects of relativization and distortion in the entrance and exit scattering channels are taken exactly into account. The cross sections calculated in this way for inelastic scattering are in good agreement with respective experimental data. The importance of the inclusion of in-medium effects in choosing parameters of the pion–nucleon amplitude is emphasized.« less

Thermal neutron radiative capture cross-section of 186W(n, γ)187W reaction

NASA Astrophysics Data System (ADS)

Tan, V. H.; Son, P. N.

2016-06-01

The thermal neutron radiative capture cross section for 186W(n, γ)187W reaction was measured by the activation method using the filtered neutron beam at the Dalat research reactor. An optimal composition of Si and Bi, in single crystal form, has been used as neutron filters to create the high-purity filtered neutron beam with Cadmium ratio of Rcd = 420 and peak energy En = 0.025 eV. The induced activities in the irradiated samples were measured by a high resolution HPGe digital gamma-ray spectrometer. The present result of cross section has been determined relatively to the reference value of the standard reaction 197Au(n, γ)198Au. The necessary correction factors for gamma-ray true coincidence summing, and thermal neutron self-shielding effects were taken into account in this experiment by Monte Carlo simulations.

Reaction production + AMS: An alternative method to study low energy reactions. 26Al as a test case

NASA Astrophysics Data System (ADS)

Acosta, L.; Araujo-Escalona, V.; Chávez, E.; Andrade, E.; Barrón-Palos, L.; Favela, F.; Flores, M. A.; García-Ramírez, J.; Huerta, A.; de Lucio, O.; Méndez-García, C.; Ortiz, M. E.; Padilla, S.; Sánchez-Benítez, A. M.; Santa Rita, P.; Solís, C.

2018-01-01

Considering the importance of the 26Al nuclei in Astrophysics, in this work, preliminary results regarding a campaign of measurements related with this radioisotope production, are presented. We have taken advantage of two different facilities: first, the radio-nucleus is produced by means of irradiation of targets selected in correlation with particular reactions; once the enrichment with 26Al was made, the targets are analyzed in an AMS machine to obtain the concentration of 26Al produced during the irradiation. With this off-line method, it is possible to measure acceptable small cross sections of a selected low energy reaction. In this work, our preliminary results for three different energies of 28Si(d,α)26Al reaction cross sections are shown, as well as our first considerations to commence with measurements of 25Mg(p,γ)26Al reaction cross sections below 1 MeV.

Solid State Research, 1981-1

DTIC Science & Technology

1981-02-15

Pine J. Mol. Spectrosc. 84, 132 v I + v 3 Combination Band of SO 2 M. Dang-Nhu* (1980) 5076 Formation of the XeBr Exciplex D. J. Ehrlich J. Chem. Phys...heteroepitaxial Ge film deposited on (I00>Si at Ts 550*C. III 0 5P.m 130- ol III --- SURFACEIGe,-,Si, ALLOY (b) * *I (b)) ,0, ++, p...:l: Fig. 111-8. (a) Bright...with the 32 input samples in the CCD ( ol wells. Center cross section: With the write voltage applied to the memory gate and the first transfer gate

Investigation of total cross sections for reactions induced by {sup 6}He interaction with silicon nuclei at energies between 5 and 50 MeV/A

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kabdrakhimova, G. D., E-mail: gaukharkd@gmail.com; Sobolev, Yu. G.; Kuhtina, I. N.

2017-01-15

Experimental excitation functions in terms of the total cross sections for {sup 6}He + Si nuclear reactions are analyzed in the energy range between 5 and 50 MeV/A, and a brief survey of the procedures used to obtain experimental data is given. Particular attention is given to describing experiments performed in beams of radioactive nuclei from the accelerators of the Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research (JINR, Dubna). The experimental data in question are analyzed on the basis of a semimicroscopic optical model.

In-beam Fission Study at JAEA

NASA Astrophysics Data System (ADS)

Nishio, Katsuhisa

2013-12-01

Fission fragment mass distributions were measured in heavy-ion induced fissions using 238U target nucleus. The measured mass distributions changed drastically with incident energy. The results are explained by a change of the ratio between fusion and quasifission with nuclear orientation. A calculation based on a fluctuation dissipation model reproduced the mass distributions and their incident energy dependence. Fusion probability was determined in the analysis. Evaporation residue cross sections were calculated with a statistical model in the reactions of 30Si + 238U and 34S + 238U using the obtained fusion probability in the entrance channel. The results agree with the measured cross sections for seaborgium and hassium isotopes.

In-beam fission study for Heavy Element Synthesis

NASA Astrophysics Data System (ADS)

Nishio, Katsuhisa

2013-12-01

Fission fragment mass distributions were measured in heavy-ion induced fissions using 238U target nucleus. The measured mass distributions changed drastically with incident energy. The results are explained by a change of the ratio between fusion and qasifission with nuclear orientation. A calculation based on a fluctuation dissipation model reproduced the mass distributions and their incident energy dependence. Fusion probability was determined in the analysis. Evaporation residue cross sections were calculated with a statistical model in the reactions of 30Si + 238U and 34S + 238U using the obtained fusion probability in the entrance channel. The results agree with the measured cross sections for seaborgium and hassium isotopes.

Proton trapping in SiO 2 layers thermally grown on Si and SiC

NASA Astrophysics Data System (ADS)

Afanas'ev, V. V.; Ciobanu, F.; Pensl, G.; Stesmans, A.

2002-11-01

Positive charging of thermal SiO 2 layers on (1 0 0)Si and (0 0 0 1)6H-, 4H-SiC related to trapping of protons is studied using low-energy proton implantation into the oxide, and compared to the trapping of holes generated by 10-eV photons. Proton trapping has an initial probability close to 100% and shows little sensitivity to the annealing-induced oxygen deficiency of SiO 2. In contrast to protons, hole trapping in as-grown SiO 2 shows a much lower efficiency which increases upon oxide annealing, in qualitative correlation with the higher density of O 3Si• defects (E' centers) detected by electron spin resonance after hole injection. Despite these differences, the neutralization of positive charges induced by holes and protons has the same cross-section, and in both cases is accompanied by liberation of atomic H suggesting that protons account for positive charge in both cases. The rupture of Si-O bonds in the oxide observed upon proton injection suggests, as a first basic step, the bonding of a proton to a bridging oxygen atom in SiO 2 network.

Comparison of silicon, nickel, and nickel silicide (Ni 3Si) as substrates for epitaxial diamond growth

NASA Astrophysics Data System (ADS)

Tucker, D. A.; Seo, D.-K.; Whangbo, M.-H.; Sivazlian, F. R.; Stoner, B. R.; Bozeman, S. P.; Sowers, A. T.; Nemanich, R. J.; Glass, J. T.

1995-07-01

We carried out experimental and theoretical studies aimed at probing interface interactions of diamond with Si, Ni, and Ni 3Si substrates. Oriented diamond films deposited on (100) silicon were characterized by polar Raman, polar XRD, and cross-sectional HRTEM. These studies show that the diamond-(100)/Si(100) interface does not adopt the 45°-rotation but the 3 : 2-match arrangement. Our extended Hückel tight-binding (EHTB) electronic structure calculations for a model system show that the interface interaction favors the 3 : 2-match arrangement. Growth on polycrystalline Ni 3Si resulted in oriented diamond particles while, under the same growth conditions, largely graphite was formed on the nickel substrate. Our EHTB electronic structure calculations for model systems show that the (111) and (100) surfaces of Ni 3Si have a strong preference for diamond-nucleation over graphite-nucleation, but this is not the case for the (111) and (100) surfaces of Ni.

Characterization of Ceramic Matrix Composite Vane Subelements Subjected to Rig Testing in a Gas Turbine Environment

NASA Technical Reports Server (NTRS)

Verrilli, Michael; Calomino, Anthony; Thomas, David J.; Robinson, R. Craig

2004-01-01

Vane subelements were fabricated from a silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite. A cross-sectional slice of an aircraft engine metal vane was the basis of the vane subelement geometry. To fabricate the small radius of the vane's trailing edge using stiff Sylramic SiC fibers, a unique SiC fiber architecture was developed. A test configuration for the vanes in a high pressure gas turbine environment was designed and fabricated. Testing was conducted using a pressure of 6 atm and combustion flow rate of 0.5 kg/sec, and consisted of fifty hours of steady state operation followed by 102 2-minute thermal cycles. A surface temperature of 1320 C was obtained for the EBC-coated SiC/SiC vane subelement. This paper will briefly discuss the vane fabrication, test configuration, and results of the vane testing. The emphasis of the paper is on characterization of the post-test condition of the vanes.

Sub-barrier fusion of Si+Si systems

NASA Astrophysics Data System (ADS)

Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

2017-11-01

The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

PubMed Central

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

2017-01-01

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. Here, we study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. We find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. These results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC. PMID:28304397

Room temperature bonding and debonding of polyimide film and glass substrate based on surface activate bonding method

NASA Astrophysics Data System (ADS)

Takeuchi, Kai; Fujino, Masahisa; Matsumoto, Yoshiie; Suga, Tadatomo

2018-02-01

The temporary bonding of polyimide (PI) films and glass substrates is a key technology for realizing flexible devices with thin-film transistors (TFTs). In this paper, we report the surface activated bonding (SAB) method using Si intermediate layers and its bonding and debonding mechanisms after heating. The bonding interface composed of Si and Fe shows a higher bond strength than the interface of only Si, while the bond strengths of both interfaces decrease with post bonding heating. It is also clarified by composition analysis on the debonded surfaces and cross-sectional observation of the bonding interface that the bond strength depends on the toughness of the intermediated layers and PI. The SAB method using Si intermediate layers is found to be applicable to the bonding and debonding of PI and glass.

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (andmore » quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.« less

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

DOE PAGES

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

2017-03-17

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (andmore » quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.« less

Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon.

PubMed

Chiu, Shao-Pin; Yeh, Sheng-Shiuan; Chiou, Chien-Jyun; Chou, Yi-Chia; Lin, Juhn-Jong; Tsuei, Chang-Chyi

2017-01-24

High-precision resistance noise measurements indicate that the epitaxial CoSi 2 /Si heterostructures at 150 and 2 K (slightly above its superconducting transition temperature T c of 1.54 K) exhibit an unusually low 1/f noise level in the frequency range of 0.008-0.2 Hz. This corresponds to an upper limit of Hooge constant γ ≤ 3 × 10 -6 , about 100 times lower than that of single-crystalline aluminum films on SiO 2 capped Si substrates. Supported by high-resolution cross-sectional transmission electron microscopy studies, our analysis reveals that the 1/f noise is dominated by excess interfacial Si atoms and their dimer reconstruction induced fluctuators. Unbonded orbitals (i.e., dangling bonds) on excess Si atoms are intrinsically rare at the epitaxial CoSi 2 /Si(100) interface, giving limited trapping-detrapping centers for localized charges. With its excellent normal-state properties, CoSi 2 has been used in silicon-based integrated circuits for decades. The intrinsically low noise properties discovered in this work could be utilized for developing quiet qubits and scalable superconducting circuits for future quantum computing.

Prevalence and Correlates of Suicidal Ideation in a Treatment-Seeking Sample of Violent Loss Survivors.

PubMed

Williams, Joah L; Eddinger, Jasmine R; Rynearson, Edward K; Rheingold, Alyssa A

2018-05-31

Family members grieving the traumatic death of a loved one, as in cases of homicide, suicide, and fatal accidents, are at risk for a number of trauma and bereavement-related mental health problems, including posttraumatic stress disorder (PTSD), depression, prolonged grief disorder, and suicidal ideation (SI). The purpose of this study was to examine the prevalence and correlates of SI among a sample of 130 treatment-seeking traumatically bereaved family members. Adults seeking treatment at two clinics on the US West Coast were assessed for SI, clinical outcomes, and death-related characteristics. Overall, 42% of traumatically bereaved family members endorsed some form of active or passive SI on the Beck Depression Inventory suicide item. The type of loss experienced (i.e., homicide, suicide, fatal accident) was not associated with SI. Although individuals with SI reported more severe symptoms across all clinical outcomes, avoidance (OR = 2.22) and depression (OR = 1.16) were uniquely associated with SI even after adjusting for PTSD-related intrusions and hyperarousal. Results should be interpreted in light of limitations associated with cross-sectional data and a single-item outcome of SI. Routine screening for SI should be standard practice for providers working with traumatically bereaved families.

In-situ observation of equilibrium transitions in Ni films; agglomeration and impurity effects.

PubMed

Thron, Andrew M; Greene, Peter; Liu, Kai; van Benthem, Klaus

2014-02-01

Dewetting of ultra-thin Ni films deposited on SiO2 layers was observed, in cross-section, by in situ scanning transmission electron microscopy. Holes were observed to nucleate by voids which formed at the Ni/SiO2 interface rather than at triple junctions at the free surface of the Ni film. Ni islands were observed to retract, in attempt to reach equilibrium on the SiO2 layer. SiO2 layers with 120 nm thickness were found to limit in situ heating experiments due to poor thermal conductivity of SiO2. The formation of graphite was observed during the agglomeration of ultra-thin Ni films. Graphite was observed to wet both the free surface and the Ni/SiO2 interface of the Ni islands. Cr forms surface oxide layers on the free surface of the SiO2 layer and the Ni islands. Cr does not prevent the dewetting of Ni, however it will likely alter the equilibrium shape of the Ni islands. © 2013 Published by Elsevier B.V.

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si.

PubMed

Gries, Katharina I; Werner, Katharina; Beyer, Andreas; Stolz, Wolfgang; Volz, Kerstin

2016-02-01

Melt-back etching is an effect that can occur for gallium (Ga) containing III/V semiconductors grown on Si. Since this effect influences interfaces between the two compounds and therefore the physical characteristics of the material composition, it is desirable to understand its driving forces. Therefore, we investigated Ga grown on Si (001) via metal organic chemical vapor deposition using trimethyl Ga as a precursor. As a result of the melt-back etching, Ga-containing droplets formed on the Si surface which reach into the Si wafer. The shape of these structures was analyzed by plan view investigation and cross sectional tomography in a (scanning) transmission electron microscope. For plan view preparation a focused ion beam was used to avoid damage to the Ga-containing structures, which are sensitive to the chemicals normally used during conventional plan view preparation. Combining the results of both investigation methods confirms that the Ga-containing structure within the Si exhibits a pyramid shape with facets along the Si {111} lattice planes.

Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

Effect of RF power density on micro- and macro-structural properties of PECVD grown hydrogenated nanocrystalline silicon thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gokdogan, Gozde Kahriman, E-mail: gozdekahriman@gmail.com; Anutgan, Tamila, E-mail: tamilaanutgan@karabuk.edu.tr

2016-03-25

This contribution provides the comparison between micro- and macro-structure of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by plasma enhanced chemical vapor deposition (PECVD) technique under different RF power densities (P{sub RF}: 100−444 mW/cm{sup 2}). Micro-structure is assessed through grazing angle X-ray diffraction (GAXRD), while macro-structure is followed by surface and cross-sectional morphology via field emission scanning electron microscopy (FE-SEM). The nanocrystallite size (∼5 nm) and FE-SEM surface conglomerate size (∼40 nm) decreases with increasing P{sub RF}, crystalline volume fraction reaches maximum at 162 mW/cm{sup 2}, FE-SEM cross-sectional structure is columnar except for the film grown at 162 mW/cm{sup 2}. The dependence of previously determinedmore » ‘oxygen content–refractive index’ correlation on obtained macro-structure is investigated. Also, the effect of P{sub RF} is discussed in the light of plasma parameters during film deposition process and nc-Si:H film growth models.« less

Electron capture in collisions of Si3+ ions with atomic hydrogen from low to intermediate energies

NASA Astrophysics Data System (ADS)

Liu, C. H.; Liu, L.; Wang, J. G.

2014-07-01

The electron capture process for the Si3+(3s) + H(1s) collisions is investigated by the quantum-mechanical molecular orbital close-coupling (MOCC) method and by the two-center atomic orbital close-coupling (AOCC) method in the energy range of 10-5-10 keV/u and 0.8-200 keV/u, respectively. Total and state-selective cross sections are presented and compared with the available theoretical and experimental results. The present MOCC and AOCC results agree well with the experimental measurements, but show some discrepancy with the calculations of Wang et al. [Phys. Rev. A 74, 052709 (2006), 10.1103/PhysRevA.74.052709] at E > 40 eV/u because of the inclusion of rotational couplings, which play important roles in the electron capture process. At lower energies, the present results are about three to five times smaller than those of Wang et al. due to the difference in the molecular data at large internuclear distances. The energy behaviors of the electron capture cross sections are discussed on the basis of identified reaction mechanisms.

The morphological study of porous silicon formed by electrochemical anodization method

NASA Astrophysics Data System (ADS)

Suryana, R.; Sandi, D. K.; Nakatsuka, O.

2018-03-01

Due to its good physical and chemical properties, porous silicon (PSi) is very attractive to study. In this research, PSi has been fabricated on n-type Si (100) by the electrochemical anodization method. The electrolyte solution used was a mixture of HF (40%), ethanol (99%) and aquadest with volume ratio of 1:1:2, respectively. It was anodized on Si(100) surface at different current densities of 10 mA/cm2 and 20 mA/cm2 with the anodization time at each current density for 10 min, 20 min, and 30 min. The Scanning Electron Microscope (SEM) images showed that the PSi surfaces have inhomogeneous sized pores in the range of 95.00 nm–1.46 μm. The PSi layers with current density and anodization time of 10 mA/cm2 (10 min), 10mA/cm2 (20 min), and 20mA/cm2 (10 min) have spherical shaped pores while the others have some uncommon (cross sectional) shaped pores on surfaces. It is considered that the cross sectional shaped maybe caused by unstable the current during the electrochemical anodization process.

Thermomechanical testing of high-temperature composites - Thermomechanical fatigue (TMF) behavior of SiC(SCS-6)/Ti-15-3

NASA Technical Reports Server (NTRS)

Castelli, Michael G.; Bartolotta, Paul; Ellis, John R.

1992-01-01

Thermomechanical testing techniques recently developed for monolithic structural alloys were successfully extended to continuous fiber reinforced composite materials in plate form. The success of this adaptation was verified on a model metal matrix composite (MMC) material, namely SiC(SCS-6)/Ti-15V-3Cr-3Al-3Sn. Effects of heating system type and specimen preparation are also addressed. Cyclic lives determined under full thermomechanical conditions were shown to be significantly reduced from those obtained under comparable isothermal and in-phase bi-thermal conditions. Fractography and metallography from specimens subjected to isothermal, out-of-phase and in-phase conditions reveal distinct differences in damage-failure modes. Isothermal metallography revealed extensive matrix cracking associated with fiber damage throughout the entire cross-section of the specimen. Out-of-phase metallography revealed extensive matrix damage associated with minimal (if any) fiber cracking. However, the damage was located exclusively at surface and near-surface locations. In-phase conditions produced extensive fiber cracking throughout the entire cross-section, associated with minimal (if any) matrix damage.

Thermomechanical testing techniques for high-temparature composites: TMF behavior of SiC(SCS-6)/Ti-15-3

NASA Technical Reports Server (NTRS)

Castelli, Michael G.; Ellis, J. Rodney; Bartolotta, Paul A.

1990-01-01

Thermomechanical testing techniques recently developed for monolithic structural alloys were successfully extended to continuous fiber reinforced composite materials in plate form. The success of this adaptation was verified on a model metal matrix composite (MMC) material, namely SiC(SCS-6)/Ti-15V-3Cr-3Al-3Sn. Effects of heating system type and specimen preparation are also addressed. Cyclic lives determined under full thermo-mechanical conditions were shown to be significantly reduced from those obtained under comparable isothermal and in-phase bi-thermal conditions. Fractography and metallography from specimens subjected to isothermal, out-of-phase and in-phase conditions reveal distinct differences in damage-failure modes. Isothermal metallography revealed extensive matrix cracking associated with fiber damage throughout the entire cross-section of the specimen. Out-of-phase metallography revealed extensive matrix damage associated with minimal (if any) fiber cracking. However, the damage was located exclusively at surface and near-surface locations. In-phase conditions produced extensive fiber cracking throughout the entire cross-section, associated with minimal (if any) matrix damage.

Age-related differences in hair trace elements: a cross-sectional study in Orenburg, Russia.

PubMed

Skalnaya, Margarita G; Tinkov, Alexey A; Demidov, Vasily A; Serebryansky, Eugeny P; Nikonorov, Alexandr A; Skalny, Anatoly V

2016-09-01

Age-related differences in the trace element content of hair have been reported. However, some discrepancies in the data exist. The primary objective of this study was to estimate the change in hair trace elements content in relation to age. Six hundred and eighteen women and 438 men aged from 10-59 years took part in the current cross-sectional study. Hair Cr, Mn, Ni, Si, Al, As, Be, Cd and Pb tended to decrease with age in the female sample, whereas hair Cu, Fe, I, Se, Li and Sn were characterised by an age-associated increase. Hair levels of Cr, Cu, I, Mn, Ni, Si and Al in men decreased with age, whereas hair Co, Fe, Se, Cd, Li and Pb content tended to increase. Hair mercury increased in association with age in men and in women, whereas hair vanadium was characterised by a significant decrease in both sexes. The difference in hair trace element content between men and women decreased with age. These data suggest that age-related differences in trace element status may have a direct implication in the ageing process.

Profiling of the injected charge drift current transients by cross-sectional scanning technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Pavlov, J.

2014-02-07

The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has beenmore » shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.« less

The Preparation and Microstructure of Nanocrystal 3C-SiC/ZrO2 Bilayer Films

PubMed Central

Ye, Chao; Ran, Guang; Zhou, Wei; Qu, Yazhou; Yan, Xin; Cheng, Qijin; Li, Ning

2017-01-01

The nanocrystal 3C-SiC/ZrO2 bilayer films that could be used as the protective coatings of zirconium alloy fuel cladding were prepared on a single-crystal Si substrate. The corresponding nanocrystal 3C-SiC film and nanocrystal ZrO2 film were also dividedly synthesized. The microstructure of nanocrystal films was analyzed by grazing incidence X-ray diffraction (GIXRD) and cross-sectional transmission electron microscopy (TEM). The 3C-SiC film with less than 30 nm crystal size was synthesized by Plasma Enhanced Chemical Vapor Deposition (PECVD) and annealing. The corresponding formation mechanism of some impurities in SiC film was analyzed and discussed. An amorphous Zr layer about 600 nm in width was first deposited by magnetron sputtering and then oxidized to form a nanocrystal ZrO2 layer during the annealing process. The interface characteristics of 3C-SiC/ZrO2 bilayer films prepared by two different processes were obviously different. SiZr and SiO2 compounds were formed at the interface of 3C-SiC/ZrO2 bilayer films. A corrosion test of 3C-SiC/ZrO2 bilayer films was conducted to qualitatively analyze the surface corrosion resistance and the binding force of the interface. PMID:29168782

Suppressing the cellular breakdown in silicon supersaturated with titanium

NASA Astrophysics Data System (ADS)

Liu, Fang; Prucnal, S.; Hübner, R.; Yuan, Ye; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2016-06-01

Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.

Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation

NASA Astrophysics Data System (ADS)

Mamor, M.; Auret, F. D.; Goodman, S. A.; Meyer, W. E.; Myburg, G.

1998-06-01

Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6-8×1016cm-3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10-15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique.

Imaging of fullerene-like structures in CNx thin films by electron microscopy; sample preparation artefacts due to ion-beam milling.

PubMed

Czigány, Zs; Neidhardt, J; Brunell, I F; Hultman, L

2003-04-01

The microstructure of CN(x) thin films, deposited by reactive magnetron sputtering, was investigated by transmission electron microscopy (TEM) at 200kV in plan-view and cross-sectional samples. Imaging artefacts arise in high-resolution TEM due to overlap of nm-sized fullerene-like features for specimen thickness above 5nm. The thinnest and apparently artefact-free areas were obtained at the fracture edges of plan-view specimens floated-off from NaCl substrates. Cross-sectional samples were prepared by ion-beam milling at low energy to minimize sample preparation artefacts. The depth of the ion-bombardment-induced surface amorphization was determined by TEM cross sections of ion-milled fullerene-like CN(x) surfaces. The thickness of the damaged surface layer at 5 degrees grazing incidence was 13 and 10nm at 3 and 0.8keV, respectively, which is approximately three times larger than that observed on Si prepared under the same conditions. The shallowest damage depth, observed for 0.25keV, was less than 1nm. Chemical changes due to N loss and graphitization were also observed by X-ray photoelectron spectroscopy. As a consequence of chemical effects, sputtering rates of CN(x) films were similar to that of Si, which enables relatively fast ion-milling procedure compared to carbon compounds. No electron beam damage of fullerene-like CN(x) was observed at 200kV.

Mg2Sn heterostructures on Si(111) substrate

NASA Astrophysics Data System (ADS)

Dózsa, L.; Galkin, N. G.; Pécz, B.; Osváth, Z.; Zolnai, Zs.; Németh, A.; Galkin, K. N.; Chernev, I. M.; Dotsenko, S. A.

2017-05-01

Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg2Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg2Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg2Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg2Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg2Sn layer. The measurements indicate the necessity of protective layer grown over the Mg2Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

Preparation and laser properties of Yb3+-doped microstructure fiber based on hydrolysis-melting technique

NASA Astrophysics Data System (ADS)

Wang, Chao

2017-01-01

The Yb3+-doped silica glass was prepared by the SiCl4 hydrolysis doping and powder melting technology based on high frequency plasma. The absorption and emission characteristics of the Yb3+-doped silica glass are studied at room temperature. The integrated absorption cross section, stimulated emission cross section and fluorescence lifetime are calculated to be 8.56×104 pm3, 1.39 pm2 and 0.56 ms, respectively. The Yb3+-doped microstructure fiber (MSF) was also fabricated by using the Yb3+-doped silica glass as fiber core. What's more, the laser properties of the Yb3+-doped MSF are studied.

Polarization effects in the elastic scattering of low-energy electrons by XH{sub 4} (X=C, Si, Ge, Sn, Pb)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bettega, M.H.F.; Varella, M.T.N. do; Lima, M.A.P.

2003-07-01

We report integral and differential cross sections for elastic scattering of electrons by XH{sub 4} (X=C, Si, Ge, Sn, Pb) molecules for energies between 3 and 10 eV. We use the Schwinger multichannel method with pseudopotentials [Bettega et al., Phys. Rev. A 47, 1111 (1993)] at the static-exchange and static-exchange plus polarization approximations. We compare our results with available theoretical and experimental results and find very good agreement. In particular, our results show Ramsauer-Towsend minima for all XH{sub 4} molecules.

Lifestyle and Genetic Predictors of Stiffness Index in Community-dwelling Elderly Korean Men and Women.

PubMed

Park, Kyung-Ae; Park, Yeon-Hwan; Suh, Min-Hee; Choi-Kwon, Smi

2015-09-01

Differing lifestyle, nutritional, and genetic factors may lead to a differing stiffness index (SI) determined by quantitative ultrasound in elderly men and women. The purpose of this study was to determine SI and the gender-specific factors associated with low SI in a Korean elderly cohort. This was a cross-sectional descriptive study identifying the gender-specific factors related to SI in 252 men and women aged 65 years and greater from local senior centers in Seoul, Korea between January and February 2009. The mean SI of elderly men was significantly higher than that of the women's. A multiple regression analysis reveals that age, nutritional status, and physical activity were predictive factors of lower SI in men, whereas age, alcohol consumption, educational level, and genetic polymorphism were predictive factors for elderly women. Low SI was common in both elderly men and women. We found gender differences in factors linked to low SI. In multiple regression analysis, nutritional status and physical activity were more important factors in men, whereas alcohol consumption, educational level, and genetic polymorphism were significant factors predicting low SI in women. Gender-specific modifiable risk factors associated with low SI should be considered when developing osteoporosis prevention programs for the elderly. Copyright © 2015. Published by Elsevier B.V.

A Detailed Analysis of Visible Defects Formed in Commercial Silicon Thin-Film Modules During Outdoor Exposure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerber, Andreas; Johnston, Steve; Olivera-Pimentel, Guillermo

We analyzed defects in silicon thin-film tandem (a-Si:H/..mu..c-Si:H) modules from an outdoor installation in India. The inspection of several affected modules reveals that most of the defects -- which optically appear as bright spots -- were formed primarily nearby the separation and series connection laser lines. Cross-sectional SEM analysis reveals that the bright spots emerge due to electrical isolation, caused by a delamination of the cell from the front TCO in the affected area. In addition, the morphology of the a-Si:H top cell differs in the delaminated area compared to the surrounding unaffected area. We propose that these effects aremore » potentially caused by an explosive and thermally triggered liberation of hydrogen from the a-Si:H layer. Electrical and thermal measurements reveal that these defects can impact the cell performance significantly.« less

Charge exchange in slow collisions of Si3+ with H

NASA Astrophysics Data System (ADS)

Joseph, D. C.; Saha, B. C.

2010-10-01

Low energy electron capture from atomic hydrogen by multi-charged ions continues to be of interest and has wide applications including both magnetically confined^ fusion and astrophysical plasmas. The charge exchange process reported here, Si^3+ + H -- Si^2+ + H^+ is an important destruction mechanism of Si^3+ in photo-ionized gas. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si^3+, with neutrals in the cometary gas vapor. The state selective cross sections are evaluated using the semi-classical molecular orbital close coupling (MOCC) [1] methods. Adiabatic potentials and wave functions for a number of low-lying singlet and triplet states are calculated using the MRD-CI package [2]. Details will be presented at the conference. [1] M. Kimura and N. F. Lane, At. Mol. Opt. Phys 26, 79 (1990). [3] R. J. Buenker, ``Current Aspects of Quantum Chemistry'' 1981, Vol 21, edited by R. Carbo (Elsevier, Amsterdam) p 17.

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, C. S.; Prohl, C.; Füllert, V.

2016-04-04

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration ofmore » III-V optoelectronic components into silicon-based technology.« less

Isotope production and target preparation for nuclear astrophysics data

NASA Astrophysics Data System (ADS)

Schumann, Dorothea; Dressler, Rugard; Maugeri, Emilio Andrea; Heinitz, Stephan

2017-09-01

Targets are in many cases an indispensable ingredient for successful experiments aimed to produce nuclear data. With the recently observed shift to study nuclear reactions on radioactive targets, this task can become extremely challenging. Concerted actions of a certain number of laboratories able to produce isotopes and manufacture radioactive targets are urgently needed. We present here some examples of successful isotope and target production at PSI, in particular the production of 60Fe samples used for half-life measurements and neutron capture cross section experiments, the chemical processing and fabrication of lanthanide targets for capture cross section experiments at n_TOF (European Organization for Nuclear Research (CERN), Switzerland) as well as the recently performed manufacturing of highly-radioactive 7Be targets for the measurement of the 7Be(n,α)4He cross section in the energy range of interest for the Big-Bang nucleosynthesis contributing to the solving of the cosmological Li-problem. The two future projects: "Determination of the half-life and experiments on neutron capture cross sections of 53Mn" and "32Si - a new chronometer for nuclear dating" are briefly described. Moreover, we propose to work on the establishment of a dedicated network on isotope and target producing laboratories.

DLTS and in situ C-V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors

NASA Astrophysics Data System (ADS)

Shashank, N.; Singh, Vikram; Gupta, Sanjeev K.; Madhu, K. V.; Akhtar, J.; Damle, R.

2011-04-01

Ni/SiO2/Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li3+ ions with fluences ranging from 1×1010 to 1×1012 ions/cm2. High frequency C-V characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai

2016-06-15

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscopemore » (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.« less

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

NASA Astrophysics Data System (ADS)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

2016-12-01

A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Modular fabrication and characterization of complex silicon carbide composite structures Advanced Reactor Technologies (ART) Research Final Report (Feb 2015 – May 2017)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khalifa, Hesham

Advanced ceramic materials exhibit properties that enable safety and fuel cycle efficiency improvements in advanced nuclear reactors. In order to fully exploit these desirable properties, new processing techniques are required to produce the complex geometries inherent to nuclear fuel assemblies and support structures. Through this project, the state of complex SiC-SiC composite fabrication for nuclear components has advanced significantly. New methods to produce complex SiC-SiC composite structures have been demonstrated in the form factors needed for in-core structural components in advanced high temperature nuclear reactors. Advanced characterization techniques have been employed to demonstrate that these complex SiC-SiC composite structures providemore » the strength, toughness and hermeticity required for service in harsh reactor conditions. The complex structures produced in this project represent a significant step forward in leveraging the excellent high temperature strength, resistance to neutron induced damage, and low neutron cross section of silicon carbide in nuclear applications.« less

L x-ray production cross sections in high-Z atoms by 3-5 MeV/u silicon ions

NASA Astrophysics Data System (ADS)

Oswal, M.; Kumar, Sunil; Singh, Udai; Singh, G.; Singh, K. P.; Mehta, D.; Mitnik, D.; Montanari, C. C.; Nandi, T.

2018-02-01

Total L x-ray production cross sections have been measured in 74W, 79Au, 82Pb, and 83Bi by impact of 3-5 MeV/u 28Si ions, with different charge states q = 8+ up to 12+. We find that the measured cross sections do not differ with the charge state of the projectile ions, but they vary with the beam energies. The experimental data has been compared with three theoretical results, ECUSAR, ECPSSR and SLPA by using the multiple-hole fluorescence and Coster-Kronig yields. The comparison has showed the best agreement with the ECUSAR. The SLPA results also describe the experiments quite well for 74W, 79Au and 83Bi, but certain differences are observed for 82Pb, while the ECPSSR values underestimate by up to a factor two. Surprisingly, the theoretical-experimental agreement is better at low beam energies than in the high beam energy side.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown

NASA Astrophysics Data System (ADS)

Wahab, Q.; Karlsteen, M.; Nur, O.; Hultman, L.; Willander, M.; Sundgren, J.-E.

1996-09-01

3C-SiC/Si heterojunction diodes were prepared by reactive magnetron sputtering of pure Si in CH4-Ar discharge on Si(111) substrates kept at temperatures (Ts) ranging from 800 to 1000°C. A good diode rectification process started for films grown at Ts≤900°C. Heterojunction diodes grown at Ts = 850°C showed the best performance with a saturation current density of 2.4 × 10-4 A cm-2. Diode reverse breakdown was obtained at a voltage of -110 V. The doping concentration (Nd) of the 3C-SiC films was calculated from 1/C2 vs V plot to be 3 × 1015 cm-3. Band offset values obtained were -0.27 and 1.35 eV for the conduction and valence band, respectively. X-ray diffraction analysis revealed the film grown at Ts = 850°C to be single-phase 3C-SiC. The full width at half maximum of the 3C-SiC(111) peak was only 0.25 degree. Cross-sectional transmission electron microscopy showed the film to be highly (111)-oriented with an epitaxial columnar structure of double positioning domain boundaries.

Spin distributions and cross sections of evaporation residues in the 28Si+176Yb reaction

NASA Astrophysics Data System (ADS)

Sudarshan, K.; Tripathi, R.; Sodaye, S.; Sharma, S. K.; Pujari, P. K.; Gehlot, J.; Madhavan, N.; Nath, S.; Mohanto, G.; Mukul, I.; Jhingan, A.; Mazumdar, I.

2017-02-01

Background: Non-compound-nucleus fission in the preactinide region has been an active area of investigation in the recent past. Based on the measurements of fission-fragment mass distributions in the fission of 202Po, populated by reactions with varying entrance channel mass asymmetry, the onset of non-compound-nucleus fission was proposed to be around ZpZt˜1000 [Phys. Rev. C 77, 024606 (2008), 10.1103/PhysRevC.77.024606], where Zp and Zt are the projectile and target proton numbers, respectively. Purpose: The present paper is aimed at the measurement of cross sections and spin distributions of evaporation residues in the 28Si+176Yb reaction (ZpZt=980 ) to investigate the fusion hindrance which, in turn, would give information about the contribution from non-compound-nucleus fission in this reaction. Method: Evaporation-residue cross sections were measured in the beam energy range of 129-166 MeV using the hybrid recoil mass analyzer (HYRA) operated in the gas-filled mode. Evaporation-residue cross sections were also measured by the recoil catcher technique followed by off-line γ -ray spectrometry at few intermediate energies. γ -ray multiplicities of evaporation residues were measured to infer about their spin distribution. The measurements were carried out using NaI(Tl) detector-based 4π-spin spectrometer from the Tata Institute of Fundamental Research, Mumbai, coupled to the HYRA. Results: Evaporation-residue cross sections were significantly lower compared to those calculated using the statistical model code pace2 [Phys. Rev. C 21, 230 (1980), 10.1103/PhysRevC.21.230] with the coupled-channel fusion model code ccfus [Comput. Phys. Commun. 46, 187 (1987), 10.1016/0010-4655(87)90045-2] at beam energies close to the entrance channel Coulomb barrier. At higher beam energies, experimental cross sections were close to those predicted by the model. Average γ -ray multiplicities or angular momentum values of evaporation residues were in agreement with the calculations of the code ccfus + pace2 within the experimental uncertainties at all the beam energies. Conclusions: Deviation of evaporation-residue cross sections from the "fusion + statistical model" predictions at beam energies close to the entrance channel Coulomb barrier indicates fusion hindrance at these beam energies which would lead to non-compound-nucleus fission. However, reasonable agreement of average angular momentum values of evaporation residues at these beam energies with those calculated using the coupled-channel fusion model with the statistical model codes ccfus + pace2 suggests that fusion suppression at beam energies close to the entrance channel Coulomb barrier where populated l waves are low is not l dependent.

YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

NASA Technical Reports Server (NTRS)

Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

1993-01-01

Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

PubMed

Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

2017-01-01

Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity engineering in bulk and nanostructures to produce high-performance thermoelectric materials.

Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures

PubMed Central

Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

2017-01-01

Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, <100>, is better than the <111> crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity engineering in bulk and nanostructures to produce high-performance thermoelectric materials. PMID:28469733

Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

NASA Astrophysics Data System (ADS)

Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

2016-11-01

Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

NASA Astrophysics Data System (ADS)

Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

2018-01-01

A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Cuevas, Andres

2015-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta2O5) underneath plasma enhanced chemical vapour deposited silicon nitride (SiNx). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta2O5 and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω.cm and n-type 1.0 Ω.cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm2 and 68 fA/cm2 are measured on 150 Ω/sq boron-diffused p+ and 120 Ω/sq phosphorus-diffused n+ c-Si, respectively. Capacitance-voltage measurements reveal a negative fixed insulator charge density of -1.8 × 1012 cm-2 for the Ta2O5 film and -1.0 × 1012 cm-2 for the Ta2O5/SiNx stack. The Ta2O5/SiNx stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

Retarding friction versus white noise in the description of heavy ion fusion

NASA Astrophysics Data System (ADS)

Chushnyakova, Maria; Gontchar, Igor

2014-03-01

We performed modeling of the collision of two spherical nuclei resulting in capture. For this aim the stochastic differential equations are used with the white or colored noise and with the instant or retarding friction, respectively. The dissipative forces are proportional to the squared derivative of the strong nucleus-nucleus interaction potential (SnnP). The SnnP is calculated in the framework of the double folding approach with the density-dependent M3Y NN-forces. Calculations performed for 28Si+144Sm reaction show that accounting for the fluctuations typically reduces the capture cross sections by not more than 10%. In contradistinction, the influence of the memory effects is found resulting in about 20% enhancement of the cross section.

Nonelastic nuclear reactions and accompanying gamma radiation

NASA Technical Reports Server (NTRS)

Snow, R.; Rosner, H. R.; George, M. C.; Hayes, J. D.

1971-01-01

Several aspects of nonelastic nuclear reactions which proceed through the formation of a compound nucleus are dealt with. The full statistical model and the partial statistical model are described and computer programs based on these models are presented along with operating instructions and input and output for sample problems. A theoretical development of the expression for the reaction cross section for the hybrid case which involves a combination of the continuum aspects of the full statistical model with the discrete level aspects of the partial statistical model is presented. Cross sections for level excitation and gamma production by neutron inelastic scattering from the nuclei Al-27, Fe-56, Si-28, and Pb-208 are calculated and compared with avaliable experimental data.

Fragment distribution in 78,86Kr+181Ta reactions

NASA Astrophysics Data System (ADS)

Zhang, Dong-Hong; Zhang, Feng-Shou

2018-05-01

Within the framework of the isospin-dependent quantum molecular dynamics model, along with the GEMINI model, the 86Kr+181Ta reaction at 80, 120 and 160 MeV/nucleon and the 78Kr+181Ta reaction at 160 MeV/nucleon are studied, and the production cross sections of the generated fragments are calculated. More inter-mediate and large mass fragments can be produced in the reactions with a large range of impact parameter. The production cross sections of nuclei such as the isotopes of Si and P generally decrease with increasing incident energy. Isotopes near the neutron drip line are produced more in the neutron-rich system 86Kr+181Ta. Supported by Youth Research Foundation of Shanxi Datong University (2016Q10)

Cross sections and rate coefficients for excitation of Δn = 1 transitions in Li-like ions with 6 < Z < 42.

NASA Astrophysics Data System (ADS)

Safronova, U. I.; Safronova, M. S.; Kato, T.

Excitation cross sections and rate coefficients by electron impact were calculated for the 1s22s - 1s2s2p, 1s22s - 1s2s2 and 1s22s - 1s2p2 transitions of the Li-like ions (C IV, N V, O VI, Ne VIII, Mg X, Al XI, Si XII, S XIV, Ar XVI, Ca XVIII, Ti XX, Fe XXIV, Ni XXVI, Zn XXVIII, Ge XXX, Se XXXII, Kr XXXIIV and Mo XXXX) by a Coulomb-Born approximation with exchange and including relativistic effects and configuration interactions. Level energies, mixing coefficients and transition wavelengths and probabilities were also computed.

Stability, Intracellular Delivery, and Release of siRNA from Chitosan Nanoparticles Using Different Cross-Linkers

PubMed Central

Abdul Ghafoor Raja, Maria; Katas, Haliza; Jing Wen, Thum

2015-01-01

Chitosan (CS) nanoparticles have been extensively studied for siRNA delivery; however, their stability and efficacy are highly dependent on the types of cross-linker used. To address this issue, three common cross-linkers; tripolyphosphate (TPP), dextran sulphate (DS) and poly-D-glutamic acid (PGA) were used to prepare siRNA loaded CS-TPP/DS/PGA nanoparticles by ionic gelation method. The resulting nanoparticles were compared with regard to their physicochemical properties including particle size, zeta potential, morphology, binding and encapsulation efficiencies. Among all the formulations prepared with different cross linkers, CS-TPP-siRNA had the smallest particle size (ranged from 127 ± 9.7 to 455 ± 12.9 nm) with zeta potential ranged from +25.1 ± 1.5 to +39.4 ± 0.5 mV, and high entrapment (>95%) and binding efficiencies. Similarly, CS-TPP nanoparticles showed better siRNA protection during storage at 4˚C and as determined by serum protection assay. TEM micrographs revealed the assorted morphology of CS-TPP-siRNA nanoparticles in contrast to irregular morphology displayed by CS-DS-siRNA and CS-PGA-siRNA nanoparticles. All siRNA loaded CS-TPP/DS/PGA nanoparticles showed initial burst release followed by sustained release of siRNA. Moreover, all the formulations showed low and concentration-dependent cytotoxicity with human colorectal cancer cells (DLD-1), in vitro. The cellular uptake studies with CS-TPP-siRNA nanoparticles showed successful delivery of siRNA within cytoplasm of DLD-1 cells. The results demonstrate that ionically cross-linked CS-TPP nanoparticles are biocompatible non-viral gene delivery system and generate a solid ground for further optimization studies, for example with regard to steric stabilization and targeting. PMID:26068222

Superplastic Aluminum Evaluation

DTIC Science & Technology

1981-06-01

Gold coated. 450 Lilt to electron beam ...................... ............... 111 16 Scanning electron micrograph of a cross section through a cavity... Gold coated. 450 tilt to electron beam ............. ...... .. ... 113 17 Typical EDAX spectra from (a) dark, angular, loose particles ((Fe,Cr)3SiAll...with atmospheric water vapor to form aluminum oxide and hydrogen. The hydrogen (already in monoatomic form) is very rapidly dissolved by the liquid

Synthesis of Mismatched Heterojunction/Substrate Interfaces

DTIC Science & Technology

1991-10-11

and advantages of strained layers. DD IZ JAN7 1473 EDITION OF INOV 65 IS OBSOLETE *’~~s.*. ~ ~.-A ~’ SECURITY CLASSIFICATIO14 Ol THIS PAGE (When Dsea...cross-section is shown ini 1-ig. 1.14(a), is analogous to the polysilicon -gate FET in Si-MOS devices. From the band diagam in Fig 1.14(b), it can be seen

Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Lieb, K. P.; Bibić, N.

2014-03-01

The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 °C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 °C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 °C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 °C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 °C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model.

Electron Capture in Slow Collisions of Si4+ With Atomic Hydrogen

NASA Astrophysics Data System (ADS)

Joseph, D. C.; Gu, J. P.; Saha, B. C.

2009-10-01

In recent years the charge transfer involving Si4+ and H at low energies has drawn considerable attention both theoretically and experimentally due to its importance not only in astronomical environments but also in modern semiconductor industries. Accurate information regarding its molecular structures and interactions are essential to understand the low energy collision dynamics. Ab initio calculations are performed using the multireference single- and double-excitation configuration-interaction (MRD-CI) method to evaluate potential energies. State selective cross sections are calculate using fully quantum and semi-classical molecular-orbital close coupling (MOCC) methods in the adiabatic representation. Detail results will be presented in the conference.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

BACKWARD ANGLE STRUCTURE IN THE 20Ne+28Si QUASIELASTIC SCATTERING

NASA Astrophysics Data System (ADS)

Sgouros, O.; Soukeras, V.; Pakou, A.; Patronis, N.; Zerva, K.; Keeley, N.; Strojek, I.; Trzcińska, A.; Piasecki, E.; Rusek, K.; Stiliaris, E.; Mazzocco, M.

2013-10-01

New data for the quasielastic scattering of 20Ne from a 28Si target at incident energies of 42.5 MeV and 52.3 MeV and for the 28Si(20Ne, 24Mg)24Mg, 28Si(20Ne, 16O)32S and 28Si(20Ne, 12C)36Ar transfer reactions at 52.3 MeV are reported. Oscillations are observed in the backward angle quasielastic scattering data at 52.3 MeV and the 28Si(20Ne, 12C)36Ar transfer cross-sections are of the same magnitude as those for single-α stripping. Coupled reaction channels (CRC) calculations are unable to describe either the quasielastic or the 28Si(20Ne, 12C)36Ar transfer data assuming a sequential α transfer process with α-particle form factors from the literature. The addition of direct 8Be cluster transfer can provide a reasonable description of both data sets, but only with much larger spectroscopic factors than suggested by simple structure calculations or the large 8Be emission thresholds of 20Ne, 28Si and 36Ar, suggesting that the observed structure is of resonance-like origin. An optical model analysis of the quasielastic scattering data is also reported.

Magnetoceramics from the bulk pyrolysis of polysilazane cross-linked by polyferrocenylcarbosilanes with hyperbranched topology.

PubMed

Kong, Jie; Kong, Minmin; Zhang, Xiaofei; Chen, Lixin; An, Linan

2013-10-23

In this contribution, we report a novel strategy for the synthesis of nanocrystal-containing magnetoceramics with an ultralow hysteresis loss by the pyrolysis of commercial polysilazane cross-linked with a functional metallopolymer possessing hyperbranched topology. The usage of hyperbranched polyferrocenylcarbosilane offers either enhanced ceramic yield or magnetic functionality of pyrolyzed ceramics. The ceramic yield was enhanced accompanied by a decreased evolution of hydrocarbons and NH3 because of the cross-linking of precursors and the hyperbranched cross-linker. The nucleation of Fe5Si3 from the reaction of iron atoms with Si-C-N amorphous phase promoted the formation of α-Si3N4 and SiC crystals. After annealing at 1300 °C, stable Fe3Si crystals were generated from the transformation of the metastable Fe5Si3 phase. The nanocrystal-containing ceramics showed good ferromagnetism with an ultralow (close to 0) hysteresis loss. This method is convenient for the generation of tunable functional ceramics using a commercial polymeric precursor cross-linked by a metallopolymer with a designed topology.

Silicon and Ge in the deep sea deduced from Si isotope and Ge measurements in giant glass sponges

NASA Astrophysics Data System (ADS)

Jochum, K. P.; Schuessler, J. A.; Haug, G. H.; Andreae, M. O.; Froelich, P. N.

2016-12-01

Biogenic silica, such as giant glass spicules of the deep-sea sponge Monorhaphis chuni, is an archive to monitor paleo-Si and -Ge in past seawater. Here we report on Si isotopes and Ge/Si ratios in up to 2.7 m long spicules using LA-(MC)-ICP-MS. Isotope ratios of Si are suitable proxies for Si concentrations in seawater, because Si isotope fractionation into biogenic silica is a function of seawater dissolved Si concentration. The δ30Si values for our specimens range from about - 0.5 ‰ to - 3.6 ‰ and are much lower than modern (>1000 m) seawater δ30Si of about 1.3 ‰. Interestingly, there is a systematic Si isotopic and Ge variation from the rim to the center of the cross sections, which we interpret as seawater paleo-Si and -Ge changes. The lifetime of the giant sponges appears to be between about 6 and 14 ka. These age estimates were obtained by comparing our analytical data with various paleo-markers of the glacial-interglacial termination. Thus, the entire Holocene and the end of the last glacial period are contained in the oldest giant spicules. The derived Si and Ge seawater concentrations are ca. 12 % higher and 20 % lower, respectively, during the late glacial than at present. Possible explanations for changing Si, Ge and Ge/Si during the deglaciation could be changes in riverine, glacial, and/or eolian deliveries of silica to the oceans and changes in marine sedimentary reverse weathering, which removes Ge into marine sediments during opal dissolution and diagenesis.

L i ( i=1,2,3) subshell X-ray production cross-sections and fluorescence yields for Ir, Pt, Pb and Bi

NASA Astrophysics Data System (ADS)

Singh, P.; Sharma, M.; Shahi, J. S.; Mehta, D.; Singh, N.

2003-09-01

The L i ( i=1,2,3) subshell X-ray production (XRP) cross-sections were measured for 77Ir, 78Pt, 82Pb and 83Bi following direct ionization in the L i ( i=1,2,3) subshells by the 59.54 keV γ-rays and the L 3 subshell by the Br/Rb/Sr/Y K X-rays. The photon sources consisting of an 241Am source in (i) the direct excitation mode and (ii) the secondary excitation mode together with the KBr/RbNO 3/SrCO 3 /Y secondary exciter and an Si(Li) detector were used. The L i ( i=1,2,3) subshell fluorescence yields ( ωi) for these elements were deduced using the measured XRP cross-sections and the L i subshell photoionization cross-sections based on the Hartree-Fock-Slater model. The measured ω1 values are found to be higher upto 50% than those based on the relativistic Dirac-Hartree-Slater (RDHS) calculations, while the ω2 and ω3 values exhibit good agreement. The predicted jump in the RDHS based ω1 values from 77Ir to 78Pt due to onset of intense L 1-L 3M 4 CK transition is not observed.

Nuclear interactions in high energy heavy ions and applications in astrophysics. [Dept. of Physics and Astronomy, Louisiana State Univ. , Baton Rouge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wefel, J.P.; Guzik, T.G.

1993-01-11

The overall objective is to study the mechanisms and the energy dependence of heavy ion fragmentation by studying the reactions of heavy ion projectiles (e.g. [sup 4]He, [sup 16]O, [sup 20]Ne, [sup 28]Si, [sup 56]Fe) in a variety of targets (H, He, C, Si, Cu, Pb) and at a number of beam energies exceeding 0.1 GeV/nucleon. The results have application to questions in high-energy nuclear astrophysics. Most of the discussion is on low-energy [sup 16]O,[sup 28]Si data analysis. The description includes analysis procedures and techniques, detector calibrations, data selections and normalizations. Cross section results for the analysis are also presented.more » 83 figs., 6 tabs., 73 refs.« less

Traps in AlGaN /GaN/SiC heterostructures studied by deep level transient spectroscopy

NASA Astrophysics Data System (ADS)

Fang, Z.-Q.; Look, D. C.; Kim, D. H.; Adesida, I.

2005-10-01

AlGaN /GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10-12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Microstructural defects in He-irradiated polycrystalline α-SiC at 1000 °C

NASA Astrophysics Data System (ADS)

Han, Wentuo; Li, Bingsheng

2018-06-01

In order to investigate the effect of the high-temperature irradiation on microstructural evolutions of the polycrystalline SiC, an ion irradiation at 1000 °C with the 500 keV He2+ was imposed to the α-SiC. The platelets, He bubbles, dislocation loops, and particularly, their interaction with the stacking fault and grain boundaries were focused on and characterized by the cross-sectional transmission electron microscopy (XTEM). The platelets expectably exhibit a dominant plane of (0001), while planes of (01-10) and (10-16) are also found. Inside the platelet, the over-pressurized bubbles exist and remarkably cause a strong-strain zone surrounding the platelet. The disparate roles between the grain boundaries and stacking faults in interacting with the bubbles and loops are found. The results are compared with the previous weighty findings and discussed.

Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering

NASA Astrophysics Data System (ADS)

Otsuka, Shintaro; Mori, Takahiro; Morita, Yukinori; Uchida, Noriyuki; Liu, Yongxun; O'uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku; Matsukawa, Takashi

2017-04-01

We structurally and electrically characterize sub-10-nm-thick heteroepitaxial Ge films on Si(001), formed by heated sputtering and subsequent rapid thermal annealing (RTA). After RTA treatment at 720 °C, we find the heteroepitaxial Ge films to have smooth surfaces with a roughness root mean square value of 0.54 nm. Raman measurement reveals that the 720 °C RTA improves the crystallinity of Ge films while maintaining abrupt Ge/Si interfaces. Cross-sectional transmission electron microscopy confirms that the 720 °C RTA step effectively reduces stacking faults and dislocations in the Ge films. The Richardson plot of the TaN/Ge/n-Si diode indicates a Schottky barrier height (SBH) of 0.33 V, which is close to the height of 0.37 V measured from the capacitance-voltage measurement. These values are reasonable compared with the reported SBH of the TaN/bulk Ge Schottky barrier diode, indicating that the method involving heated sputtering and subsequent RTA provides adequate thin Ge films for Ge/Si heterostructures.

Microstructure study of ZnO thin films on Si substrate grown by MOCVD

NASA Astrophysics Data System (ADS)

Huang, Jingyun; Ye, Zhizhen; Lu, Huanming; Wang, Lei; Zhao, Binghui; Li, Xianhang

2007-08-01

The microstructure of zinc oxide thin films on silicon substrates grown by metalorganic chemical vapour deposition (MOCVD) was characterized. The cross-sectional bright-field transmission electron microscopy (TEM) image showed that small ZnO columnar grains were embedded into large columnar grains, and the selected-area electron diffraction pattern showed that the ZnO/Si thin films were nearly c-axis oriented. The deviation angle along the ZnO (0 0 0 1) direction with respect to the growth direction of Si (1 0 0) was no more than 5°. The [0 0 0 1]-tilt grain boundaries in ZnO/Si thin films were investigated symmetrically by plan-view high resolution TEM. The boundaries can be classified into three types: low-angle boundaries described as an irregular array of edge dislocations, boundaries of near 30° angle with (1\\,0\\,\\bar{1}\\,0) facet structures and large-angle boundaries with symmetric structure which could be explained by a low Σ coincident site lattice structure mode. The research was useful to us for finding optimized growth conditions to improve ZnO/Si thin film quality.

Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Woo, Seohwi; Kim, Minho; So, Byeongchan; Yoo, Geunho; Jang, Jongjin; Lee, Kyuseung; Nam, Okhyun

2014-12-01

Nonpolar (1 0 -1 0) m-plane GaN has been grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). We studied the defect reduction of m-GaN with embedded SiNx interlayers deposited by ex-situ metal organic chemical vapor deposition (MOCVD). The full-width at half-maximum values of the X-ray rocking curves for m-GaN with embedded SiNx along [1 1 -2 0]GaN and [0 0 0 1]GaN were reduced to 528 and 1427 arcs, respectively, as compared with the respective values of 947 and 3170 arcs, of m-GaN without SiNx. Cross-section transmission electron microscopy revealed that the basal stacking fault density was decreased by approximately one order to 5×104 cm-1 due to the defect blocking of the embedded SiNx. As a result, the near band edge emission intensities of the room-temperature and low-temperature photoluminescence showed approximately two-fold and four-fold improvement, respectively.

Rating scale item assessment of self-harm in postpartum women: a cross-sectional analysis.

PubMed

Coker, Jessica L; Tripathi, Shanti P; Knight, Bettina T; Pennell, Page B; Magann, Everett F; Newport, D Jeffrey; Stowe, Zachary N

2017-10-01

We examined the utility of screening instruments to identify risk factors for suicidal ideation (SI) in a population of women with neuropsychiatric illnesses at high risk for postpartum depression. Pregnant women with neuropsychiatric illness enrolled prior to 20 weeks of gestation. Follow-up visits at 4-8-week intervals through 13 weeks postpartum included assessment of depressive symptoms with both clinician and self-rated scales. A total of 842 women were included in the study. Up to 22.3% of postpartum women admitted SI on rating scales, despite the majority (79%) receiving active pharmacological treatment for psychiatric illness. Postpartum women admitting self-harm/SI were more likely to meet criteria for current major depressive episode (MDE), less than college education, an unplanned pregnancy, a history of past suicide attempt, and a higher score on the Childhood Trauma Questionnaire. In women with a history of neuropsychiatric illness, over 20% admitted SI during the postpartum period despite ongoing psychiatric treatment. Patient-rated depression scales are more sensitive screening tools than a clinician-rated depression scale for +SI in the postpartum period.

Measurement of Thicknesses of High-κ Gate-Dielectric Films on Silicon by Angle-Resolved XPS

NASA Astrophysics Data System (ADS)

Powell, Cedric; Smekal, Werner; Werner, Wolfgang

2006-03-01

We report on the use of a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA) in measuring thicknesses of candidate high-κ gate-dielectric materials (HfO2, HfSiO4, ZrO2, and ZrSiO4) on silicon by angle-resolved XPS. For conventional measurements of film thicknesses, effective attenuation lengths (EALs) have been computed for these materials from SESSA as a function of film thickness and photoelectron emission angle (i.e., to simulate the effects of tilting the sample). These EALs are believed to be more accurate than similar EALs obtained from the transport approximation because realistic cross sections are used for both elastic and inelastic scattering in the film and substrate materials. We also present ``calibration curves'' showing calculated ratios of selected photoelectron intensities from thin films of HfO2 on Si with an intermediate SiO2 layer. These ratios provide a simple and convenient means of determining the thicknesses of SiO2 and HfO2 films for particular measurement conditions.

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Cherkova, S. G.; Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Kamaev, G. N.; Skuratov, V. A.

2017-08-01

Light-emitting nanoclusters were formed in Si/SiO2 multilayer structures irradiated with 167 MeV Xe ions to the doses of 1011-3  ×  1014 cm-2 and annealed in the forming-gas at 500 °C and in nitrogen at 800-1100 °C, 30 min. The thicknesses were ~4 nm or ~7-8 for the Si, and ~10 nm for the SiO2 layers. The structures were studied using photoluminescence (PL), Raman spectroscopy, and the cross-sectional high resolution transmission electron microscopy (HRTEM). As-irradiated samples showed the PL, correlating with the growth of the ion doses. HRTEM found the layers to be partly disintegrated. The thickness of the amorphous Si layer was crucial. For 4 nm thick Si layers the PL was peaking at ~490 nm, and quenched by the annealing. It was ascribed to the structural imperfections. For the thicker Si layers the PL was peaking at ~600 nm and was attributed to the Si-rich nanoclusters in silicon oxide. The annealing increases the PL intensity and shifts the band to ~790 nm, typical of Si nanocrystals. Its intensity was proportional to the dose. Raman spectra confirmed the nanocrystals formation. All the results obtained evidence the material melting in the tracks for 10-11-10-10 s providing thereby fast diffusivities of the atoms. The thicker Si layers provide more excess Si to create the nanoclusters via a molten state diffusion.

Elastic, inelastic, and 1-nucleon transfer channels in the 7Li+120Sn system

NASA Astrophysics Data System (ADS)

Kundu, A.; Santra, S.; Pal, A.; Chattopadhyay, D.; Tripathi, R.; Roy, B. J.; Nag, T. N.; Nayak, B. K.; Saxena, A.; Kailas, S.

2017-03-01

Background: Simultaneous description of major outgoing channels for a nuclear reaction by coupled-channels calculations using the same set of potential and coupling parameters is one of the difficult tasks to accomplish in nuclear reaction studies. Purpose: To measure the elastic, inelastic, and transfer cross sections for as many channels as possible in 7Li+120Sn system at different beam energies and simultaneously describe them by a single set of model calculations using fresco. Methods: Projectile-like fragments were detected using six sets of Si-detector telescopes to measure the cross sections for elastic, inelastic, and 1-nucleon transfer channels at two beam energies of 28 and 30 MeV. Optical model analysis of elastic data and coupled-reaction-channels (CRC) calculations that include around 30 reaction channels coupled directly to the entrance channel, with respective structural parameters, were performed to understand the measured cross sections. Results: Structure information available in the literature for some of the identified states did not reproduce the present data. Cross sections obtained from CRC calculations using a modified but single set of potential and coupling parameters were able to describe simultaneously the measured data for all the channels at both the measured energies as well as the existing data for elastic and inelastic cross sections at 44 MeV. Conclusions: Non-reproduction of some of the cross sections using the structure information available in the literature which are extracted from reactions involving different projectiles indicates that such measurements are probe dependent. New structural parameters were assigned for such states as well as for several new transfer states whose spectroscopic factors were not known.

Measurement of the 33S(n,α) cross-section at n_TOF(CERN): Applications to BNCT

PubMed Central

Sabaté-Gilarte, Marta; Praena, Javier; Porras, Ignacio; Quesada, José Manuel; Mastinu, Pierfrancesco

2016-01-01

Aim The main purpose of this work is to present a new (n,α) cross-section measurement for a stable isotope of sulfur, 33S, in order to solve existing discrepancies. Background 33S has been studied as a cooperating target for Boron Neutron Capture Therapy (BNCT) because of its large (n,α) cross-section in the epithermal neutron energy range, the most suitable one for BNCT. Although the most important evaluated databases, such as ENDF, do not show any resonances in the cross-section, experimental measurements which provided data from 10 keV to 1 MeV showed that the lowest-lying and strongest resonance of 33S(n,α) cross-section occurs at 13.5 keV. Nevertheless, the set of resonance parameters that describe such resonance shows important discrepancies (more than a factor of 2) between them. Materials and methods A new measurement of the 33S(n,α)30Si reaction cross-section was proposed to the ISOLDE and Neutron Time-of-Flight Experiments Committee of CERN. It was performed at n_TOF(CERN) in 2012 using MicroMegas detectors. Results In this work, we will present a brief overview of the experiment as well as preliminary results of the data analysis in the neutron energy range from thermal to 100 keV. These results will be taken into account to calculate the kerma-fluence factors corresponding to 33S in addition to 10B and those of a standard four-component ICRU tissue. Conclusions MCNP simulations of the deposited dose, including our experimental data, shows an important kerma rate enhancement at the surface of the tissue, mainly due to the presence of 33S. PMID:26933393

Measurement of the (33)S(n,α) cross-section at n_TOF(CERN): Applications to BNCT.

PubMed

Sabaté-Gilarte, Marta; Praena, Javier; Porras, Ignacio; Quesada, José Manuel; Mastinu, Pierfrancesco

2016-01-01

The main purpose of this work is to present a new (n,α) cross-section measurement for a stable isotope of sulfur, (33)S, in order to solve existing discrepancies. (33)S has been studied as a cooperating target for Boron Neutron Capture Therapy (BNCT) because of its large (n,α) cross-section in the epithermal neutron energy range, the most suitable one for BNCT. Although the most important evaluated databases, such as ENDF, do not show any resonances in the cross-section, experimental measurements which provided data from 10 keV to 1 MeV showed that the lowest-lying and strongest resonance of (33)S(n,α) cross-section occurs at 13.5 keV. Nevertheless, the set of resonance parameters that describe such resonance shows important discrepancies (more than a factor of 2) between them. A new measurement of the (33)S(n,α)(30)Si reaction cross-section was proposed to the ISOLDE and Neutron Time-of-Flight Experiments Committee of CERN. It was performed at n_TOF(CERN) in 2012 using MicroMegas detectors. In this work, we will present a brief overview of the experiment as well as preliminary results of the data analysis in the neutron energy range from thermal to 100 keV. These results will be taken into account to calculate the kerma-fluence factors corresponding to (33)S in addition to (10)B and those of a standard four-component ICRU tissue. MCNP simulations of the deposited dose, including our experimental data, shows an important kerma rate enhancement at the surface of the tissue, mainly due to the presence of (33)S.

Sandwich-structured C/C-SiC composites fabricated by electromagnetic-coupling chemical vapor infiltration.

PubMed

Hu, Chenglong; Hong, Wenhu; Xu, Xiaojing; Tang, Sufang; Du, Shanyi; Cheng, Hui-Ming

2017-10-13

Carbon fiber (CF) reinforced carbon-silicon carbide (C/C-SiC) composites are one of the most promising lightweight materials for re-entry thermal protection, rocket nozzles and brake discs applications. In this paper, a novel sandwich-structured C/C-SiC composite, containing two exterior C/SiC layers, two gradient C/C-SiC layers and a C/C core, has been designed and fabricated by two-step electromagnetic-coupling chemical vapor infiltration (E-CVI) for a 20-hour deposition time. The cross-section morphologies, interface microstructures and SiC-matrix growth characteristics and compositions of the composites were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD), respectively. Microstructure characterization indicates that the SiC growth includes an initial amorphous SiC zone, a gradual crystallization of SiC and grow-up of nano-crystal, and a columnar grain region. The sandwich structure, rapid deposition rate and growth characteristics are attributed to the formation of thermal gradient and the establishment of electromagnetic field in the E-CVI process. The composite possesses low density of 1.84 g/cm 3 , high flexural strength of 325 MPa, and low linear ablation rate of 0.38 μm/s under exposure to 5-cycle oxyacetylene flame for 1000 s at ~1700 °C.

Broadband optical absorption by tunable Mie resonances in silicon nanocone arrays

DOE PAGES

Wang, Z. Y.; Zhang, R. J.; Wang, S. Y.; ...

2015-01-15

Nanostructure arrays such as nanowire, nanopillar, and nanocone arrays have been proposed to be promising antireflection structures for photovoltaic applications due to their great light trapping ability. In this paper, the optical properties of Si nanopillar and nanocone arrays in visible and infrared region were studied by both theoretical calculations and experiments. The results show that the Mie resonance can be continuously tuned across a wide range of wavelength by varying the diameter of the nanopillars. However, Si nanopillar array with uniform diameter exhibits only discrete resonance mode, thus can't achieve a high broadband absorption. On the other hand, themore » Mie resonance wavelength in a Si nanocone array can vary continuously as the diameters of the cross sections increase from the apex to the base. Therefore Si nanocone arrays can strongly interact with the incident light in the broadband spectrum and the absorbance by Si nanocone arrays is higher than 95% over the wavelength from 300 to 2000 nm. In addition to the Mie resonance, the broadband optical absorption of Si nanocone arrays is also affected by Wood-Rayleigh anomaly effect and metal impurities introduced in the fabrication process.« less

Charge Transfer Processes in Collisions of Si4+ Ions with He Atoms at Intermediate Energies

NASA Astrophysics Data System (ADS)

Suzuki, R.; Watanabe, A.; Sato, H.; Gu, J. P.; Hirsch, G.; Buenker, R. J.; Kimura, M.; Stancil, P. C.

Charge transfer in collisions of Si4+ ions with He atoms below 100 keV/u is studied by using a molecular orbital representation within both the semiclassical and quantal representations. Single transfer reaction Si4++He →Si3++He+ has been studied by a number of theoretical investigations. In addition to the reaction (1), the first semiclassical MOCC calculations are performed for the double transfer channel Si4++HE→Si2++He2+ Nine molecular states that connect both with single and double electron transfer processes are considered in the present model. Electronic states and corresponding couplings are determined by the multireference single- and double- excitation configuration interaction method. The present cross sections tie well with the earlier calculations of Stancil et al., Phys. Rev. A 55, 1064 (1997) at lower energies, but show a rather different magnitude from those of Bacchus-Montabonel and Ceyzeriat, Phys. Rev. A 58, 1162 (1998). The present rate constant is found to be significantly different from the experimental finding of Fang and Kwong, Phys. Rev. A 59, 342 (1996) at 4,600 K, and hence does not support the experiment.

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

NASA Astrophysics Data System (ADS)

Bonilla, Ruy S.; Wilshaw, Peter R.

2017-04-01

The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting factor in achieving high performance optoelectronic devices, including solar cells, laser diodes, and photodetectors. The theoretical model and a solution algorithm for surface recombination have been previously reported. However, their successful application to experimental data for a wide range of both minority excess carrier concentrations and dielectric fixed charge densities has not previously been shown. Here, a parametrisation for the semiconductor-dielectric interface charge Q i t is used in a Shockley-Read-Hall extended formalism to describe recombination at the c-Si/SiO2 interface, and estimate the physical parameters relating to the interface trap density D i t , and the electron and hole capture cross-sections σ n and σ p . This approach gives an excellent description of the experimental data without the need to invoke a surface damage region in the c-Si/SiO2 system. Band-gap tail states have been observed to limit strongly the effectiveness of field effect passivation. This approach provides a methodology to determine interface recombination parameters in any semiconductor-insulator system using macro scale measuring techniques.

Broadband optical absorption by tunable Mie resonances in silicon nanocone arrays

PubMed Central

Wang, Z. Y.; Zhang, R. J.; Wang, S. Y.; Lu, M.; Chen, X.; Zheng, Y. X.; Chen, L. Y.; Ye, Z.; Wang, C. Z.; Ho, K. M.

2015-01-01

Nanostructure arrays such as nanowire, nanopillar, and nanocone arrays have been proposed to be promising antireflection structures for photovoltaic applications due to their great light trapping ability. In this paper, the optical properties of Si nanopillar and nanocone arrays in visible and infrared region were studied by both theoretical calculations and experiments. The results show that the Mie resonance can be continuously tuned across a wide range of wavelength by varying the diameter of the nanopillars. However, Si nanopillar array with uniform diameter exhibits only discrete resonance mode, thus can't achieve a high broadband absorption. On the other hand, the Mie resonance wavelength in a Si nanocone array can vary continuously as the diameters of the cross sections increase from the apex to the base. Therefore Si nanocone arrays can strongly interact with the incident light in the broadband spectrum and the absorbance by Si nanocone arrays is higher than 95% over the wavelength from 300 to 2000 nm. In addition to the Mie resonance, the broadband optical absorption of Si nanocone arrays is also affected by Wood-Rayleigh anomaly effect and metal impurities introduced in the fabrication process. PMID:25589290

Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shasti, M.; Mortezaali, A., E-mail: mortezaali@alzahra.ac.ir; Dariani, R. S.

2015-01-14

In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Simore » photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.« less

Superconducting magnesium diboride films on Si with Tc0˜24 K grown via vacuum annealing from stoichiometric precursors

NASA Astrophysics Data System (ADS)

Zhai, H. Y.; Christen, H. M.; Zhang, L.; Cantoni, C.; Paranthaman, M.; Sales, B. C.; Christen, D. K.; Lowndes, D. H.

2001-10-01

Superconducting magnesium diboride films with Tc0˜24 K and sharp transition ˜1 K were prepared on Si by pulsed-laser deposition from stoichiometric MgB2 target. Contrary to previous reports, anneals at 630 °C and a background of 2×10-4Ar/4%H2 were performed without the requirement of Mg vapor or Mg cap layer. This integration of superconducting MgB2 film on Si may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy show that the films have a uniform surface morphology and thickness. Energy-dispersive spectroscopy study reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low Tc for those in situ annealed films, while the use of Si as a substrate does not result in a decrease in Tc as compared to other substrates.

SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect

NASA Astrophysics Data System (ADS)

Ooka, Masahiro; Yokoyama, Shin

2004-06-01

The etching of contact holes of 0.1 μm size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the radio frequency (rf) power is extended.

Fabrication and characterization of plasma-sprayed HA/SiO(2) coatings for biomedical application.

PubMed

Morks, M F

2008-01-01

Fused silica powder has been mixed with hydroxyapatite (HA) powder and plasma sprayed by using gas tunnel-type plasma jet. The influence of silica content (10 wt% and 20 wt%) on the microstructure and mechanical properties of HA-silica coatings was investigated. For investigating the microstructure and mechanical properties of HA-silica coatings, SUS 304 stainless steel was used as substrate material. The spraying was carried out on roughened substrate in an atmospheric chamber. Scanning electron microscope micrographs of cross-sectioned HA/SiO(2) coatings showed that the sprayed HA coatings with 10 and 20 wt% SiO(2) have dense structure with low porosity compared to the pure HA coatings. On the other hand, as the amount of silica was increased the coatings became denser, harder and exhibited high abrasive wear resistance. The presence of silica significantly improved the adhesive strength of HA/SiO(2) coatings mainly due to the increase in bonding strength of the coating at the interface.

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

NASA Astrophysics Data System (ADS)

Frazzetto, Alessia; Giannazzo, Filippo; Lo Nigro, Raffaella; di Franco, Salvatore; Bongiorno, Corrado; Saggio, Mario; Zanetti, Edoardo; Raineri, Vito; Roccaforte, Fabrizio

2011-12-01

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM. The characteristics of the contacts were significantly affected by the roughness of the underlying SiC. In particular, the surface roughness of the Al-implanted SiC regions annealed at 1700°C could be strongly reduced using a protective carbon capping layer during annealing. This latter resulted in an improved surface morphology and specific contact resistance of the Ti/Al ohmic contacts formed on these regions. The microstructure of the contacts was monitored by X-ray diffraction analysis and a cross-sectional transmission electron microscopy, and correlated with the electrical results.

Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

PubMed

Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

2014-02-12

Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.

Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching

PubMed Central

2014-01-01

Abstract Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm−2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS 61.46.Km; 78.55.-m; 78.67.Lt PMID:24521284

Primary Dendrite Arm Spacings in Al-7Si Alloy Directionally Solidified on the International Space Station

NASA Technical Reports Server (NTRS)

Angart, Samuel; Lauer, Mark; Poirier, David; Tewari, Surendra; Rajamure, Ravi; Grugel, Richard

2015-01-01

Samples from directionally solidified Al- 7 wt. % Si have been analyzed for primary dendrite arm spacing (lambda) and radial macrosegregation. The alloy was directionally solidified (DS) aboard the ISS to determine the effect of mitigating convection on lambda and macrosegregation. Samples from terrestrial DS-experiments thermal histories are discussed for comparison. In some experiments, lambda was measured in microstructures that developed during the transition from one speed to another. To represent DS in the presence of no convection, the Hunt-Lu model was used to represent diffusion controlled growth under steady-state conditions. By sectioning cross-sections throughout the entire length of a solidified sample, lambda was measured and calculated using the model. During steady-state, there was reasonable agreement between the measured and calculated lambda's in the space-grown samples. In terrestrial samples, the differences between measured and calculated lambda's indicated that the dendritic growth was influenced by convection.

Measurements of Rayleigh, Compton and resonant Raman scattering cross-sections for 59.536 keV γ-rays

NASA Astrophysics Data System (ADS)

Singh, Prem; Mehta, D.; Singh, N.; Puri, S.; Shahi, J. S.

2004-09-01

The K-L and K-M resonant Raman scattering (RRS) cross-sections have been measured for the first time at the 59.536 keV photon energy in the 70Yb ( BK=61.332 keV), 71Lu ( BK=63.316 keV) and 72Hf ( BK=65.345 keV) elements; BK being the K-shell binding energy. The K-L and K-M RRS measurements have been performed at the 59° and 133° angles, respectively, to avoid interference of the Compton-scatter peak. The Rayleigh and Compton scattering cross-sections for the 59.536 keV γ-rays have also been measured at both the angles in the atomic region 1⩽ Z⩽92. Measurements were performed using the reflection-mode geometrical arrangements involving the 241Am radioisotope as photon source and planar Si(Li) and HPGe detectors. Ratios of the K-M and K-L RRS cross-sections in Yb, Lu and Hf are in general lower than that of the fluorescent Kβ 1,3,5 (K-M) and Kα (K-L) X-ray transition probabilities. Theoretical Rayleigh scattering cross-sections based on the modified form-factors (MFs) corrected for the anomalous scattering factors (ASFs) and the S-matrix calculations are on an average ˜15% and ˜6% higher, respectively, at the 133° angle and exhibit good agreement with the measured data at the 59° angle. Larger deviations ˜30% and ˜20%, respectively, are observed at the 133° angle for the 64Gd, 66Dy, 67Ho and 70Yb elements having the K-shell binding energy in vicinity of the incident photon energy. The measured Compton scattering cross-sections are in general agreement with those calculated using the Klein-Nishina cross-sections and the incoherent scattering function.

Electron Impact Inner-shell Ionization including relativistic corrections.

NASA Astrophysics Data System (ADS)

Saha, Bidhan C.; Alfaz Uddin, M.; Basak, Arun K.

2007-04-01

We report a simple method to evaluate the electron impact inner-shell ionization cross sections at ultra high energy regime; there still remains a sparse cross sections due to lack of reliable method. To extend the validity domains of the siBED model [1] in terms of targets and incident energies in this work we modified the RQIBED model [2], and denoted it as MUIBED. It is examined for the description of the experimental EIICS data of various target atoms up to E=250MeV. Details will be presented at the meeting. [1] W. M. Huo, Phys. Rev A 64, 042719 (2001). [2] M. A. Uddin, A. K. F. Haque, M. S. Mahbub, K. R. Karim, A. K. Basak and B. C. Saha, Phys. Rev. A 71, 032715 (2005).

Measurements of K shell absorption jump factors and jump ratios using EDXRF technique

NASA Astrophysics Data System (ADS)

Kacal, Mustafa Recep; Han, İbrahim; Akman, Ferdi

2015-04-01

In the present work, the K-shell absorption jump factors and jump ratios for 30 elements between Ti ( Z = 22) and Er ( Z = 68) were measured by energy dispersive X-ray fluorescence (EDXRF) technique. The jump factors and jump ratios for these elements were determined by measuring the K shell fluorescence parameters such as the Kα X-ray production cross-sections, K shell fluorescence yields, Kβ-to- Kα X-rays intensity ratios, total atomic absorption cross sections and mass attenuation coefficients. The measurements were performed using an Am-241 radioactive point source and a Si (Li) detector in direct excitation and transmission experimental geometry. The results for jump factors and jump ratios were compared with theoretically calculated and the ones available in the literature.

A model comparison approach to trauma-related guilt as a mediator of the relationship between PTSD symptoms and suicidal ideation among veterans.

PubMed

Cunningham, Katherine C; Farmer, Chloe; LoSavio, Stefanie T; Dennis, Paul A; Clancy, Carolina P; Hertzberg, Michael A; Collie, Claire F; Calhoun, Patrick S; Beckham, Jean C

2017-10-15

Suicidal ideation (SI) is a serious issue affecting U.S. veterans, and those with posttraumatic stress disorder (PTSD) are at an especially high risk of SI. Guilt has been associated with both PTSD and SI and may therefore be an important link between these constructs. The present study compared models of trauma-related guilt and used path analysis to examine the direct and indirect effects of PTSD and trauma-related guilt on SI among a sample of 988 veterans receiving outpatient PTSD treatment at a Veterans Affairs (VA) specialty clinic. Results showed that a model of trauma-related guilt including guilt-cognitions and global guilt (but not distress) provided the best model fit for the data. PTSD and trauma-related guilt had direct effects on SI, and PTSD exhibited indirect effects on SI via trauma-related guilt. The use of cross-sectional data limits the ability to make causal inferences. A treatment-seeking sample composed primarily of Vietnam veterans limits generalizability to other populations. Trauma-related guilt, particularly guilt cognitions, may be an effective point of intervention to help reduce SI among veterans with PTSD. This is an important area of inquiry, and suggestions for future research are discussed. Published by Elsevier B.V.

Inelastic scattering of electrons at real metal surfaces

NASA Astrophysics Data System (ADS)

Ding, Z.-J.

1997-04-01

A theory is presented to calculate the electron inelastic scattering cross section for a moving electron near the surface region at an arbitrary takeoff angle. The theory is based on using a bulk plasmon-pole approximation to derive the numerically computable expression of the electron self-energy in the random-phase approximation for a surface system, through the use of experimental optical constants. It is shown that the wave-vector-dependent surface dielectric function satisfies the surface sum rules in this scheme. The theory provides a detailed knowledge of electron self-energy depending on the kinetic energy, distance from surface, and velocity vector of an electron moving in any metal of a known dielectric constant, accommodating the formulation to practical situation in surface electron spectroscopies. Numerical computations of the energy-loss cross section have been made for Si and Au. The contribution to the total differential scattering cross section from each component is analyzed. The depth dependence informs us in detail how the bulk excitation mode changes to a surface excitation mode with an electron approaching the surface from the interior of a medium.

Experimental study on beryllium-7 production via sequential reactions in lithium-containing compounds irradiated by 14 MeV neutrons

NASA Astrophysics Data System (ADS)

Maekawa, F.; Verzilov, Y. M.; Smith, D. L.; Ikeda, Y.

2000-12-01

Except for 3H and 14C, no radioactive nuclide is produced by neutron-induced reactions with lithium in lithium-containing materials such as Li 2O and Li 2CO 3. However, when the lithium-containing materials are irradiated by 14 MeV neutrons, radioactive 7Be is produced by sequential charged particle reactions (SCPR). In this study, we measured effective 7Be production cross-sections in several lithium-containing samples at 14 MeV: the cross-sections are in the order of μb. Estimation of the effective cross-sections is attempted, and the estimated values agreed well with the experimental data. It was shown that the 7Be activity in a unit volume of lithium-containing materials in D-T fusion reactors can exceed total activity of the same unit volume of the SiC structural material in a certain cooling time. Consequently, a careful consideration of the 7Be production by SCPR is required to assess radioactive inventories in lithium-containing D-T fusion blanket materials.

Glyoxalated polyacrylamide as a covalently attachable and rapidly cross-linkable binder for Si electrode in lithium ion batteries

NASA Astrophysics Data System (ADS)

Yoo, Jung-Keun; Jeon, Jaebeom; Kang, Kisuk; Jung, Yeon Sik

2017-03-01

Recently, investigation of Si-based anode materials for rechargeable battery applications garnered much interest due to its exceptionally high capacity. High-capacity Si anode ( 4,200 mAhg-1) is highly desirable for the replacement of conventional graphite anode (< 400 mAhg-1) for large-scale energy-storage applications such as in electric vehicles (EVs) and energy storage systems (ESSs) for renewable energy sources. However, Si-based anodes suffer from poor cycling stability due to their large volumetric changes during repeated Li insertion. Therefore, development of highly efficient binder materials that can suppress the volume change of Si is one of the most essential parts of improving the performance of batteries. We herein demonstrate highly cross-linked polymeric binder (glyoxalated polyacrylamide) with an enhanced mechanical property by applying wet-strengthening chemistry used in paper industry. We found that the degree of cross-linking can be systematically adjusted by controlling the acidity of the slurry and has a profound effect on the cell performance using Si anode. The enhanced cycle performance of Si nanoparticles obtained by treating the binder at pH 4 can be explained by its strong interaction between the binder and Si surface and current collector, and also rigidity of binder by cross-linking.

High-Temperature Corrosion Behavior of SiBCN Fibers for Aerospace Applications.

PubMed

Ji, Xiaoyu; Wang, Shanshan; Shao, Changwei; Wang, Hao

2018-06-13

Amorphous SiBCN fibers possessing superior stability against oxidation have become a desirable candidate for high-temperature aerospace applications. Currently, investigations on the high-temperature corrosion behavior of these fibers for the application in high-heat engines are insufficient. Here, our polymer-derived SiBCN fibers were corroded at 1400 °C in air and simulated combustion environments. The fibers' structural evolution after corrosion in two different conditions and the potential mechanisms are investigated. It shows that the as-prepared SiBCN fibers mainly consist of amorphous networks of SiN 3 C, SiN 4 , B-N hexatomic rings, free carbon clusters, and BN 2 C units. High-resolution transmission electron microscopy cross-section observations combined with energy-dispersive spectrometry/electron energy-loss spectroscopy analysis exhibit a trilayer structure with no detectable cracks for fibers after corrosion, including the outermost SiO 2 layer, the h-BN grain-contained interlayer, and the uncorroded fiber core. A high percentage of water vapor contained in the simulated combustion environment triggers the formation of abundant α-cristobalite nanoparticles dispersing in the amorphous SiO 2 phase, which are absent in fibers corroded in air. The formation of h-BN grains in the interlayer could be ascribed to the sacrificial effects of free carbon clusters, Si-C, and Si-N units reacting with oxygen diffusing inward, which protects h-BN grains formed by networks of B-N hexatomic rings in original SiBCN fibers. These results improve our understanding of the corrosion process of SiBCN fibers in a high-temperature oxygen- and water-rich atmosphere.

Light-ion Production from O, Si, Fe and Bi Induced by 175 MeV Quasi-monoenergetic Neutrons

NASA Astrophysics Data System (ADS)

Bevilacqua, R.; Pomp, S.; Jansson, K.; Gustavsson, C.; Österlund, M.; Simutkin, V.; Hayashi, M.; Hirayama, S.; Naitou, Y.; Watanabe, Y.; Hjalmarsson, A.; Prokofiev, A.; Tippawan, U.; Lecolley, F.-R.; Marie, N.; Leray, S.; David, J.-C.; Mashnik, S.

2014-05-01

We have measured double-differential cross sections in the interaction of 175 MeV quasi-monoenergetic neutrons with O, Si, Fe and Bi. We have compared these results with model calculations with INCL4.5-Abla07, MCNP6 and TALYS-1.2. We have also compared our data with PHITS calculations, where the pre-equilibrium stage of the reaction was accounted respectively using the JENDL/HE-2007 evaluated data library, the quantum molecular dynamics model (QMD) and a modified version of QMD (MQMD) to include a surface coalescence model. The most crucial aspect is the formation and emission of composite particles in the pre-equilibrium stage.

Low-energy charge transfer for collisions of Si3+ with atomic hydrogen

NASA Astrophysics Data System (ADS)

Bruhns, H.; Kreckel, H.; Savin, D. W.; Seely, D. G.; Havener, C. C.

2008-06-01

Cross sections of charge transfer for Si3+ ions with atomic hydrogen at collision energies of ≈40-2500eV/u were carried out using a merged-beam technique at the Multicharged Ion Research Facility at Oak Ridge National Laboratory. The data span an energy range in which both molecular orbital close coupling (MOCC) and classical trajectory Monte Carlo (CTMC) calculations are available. The influence of quantum mechanical effects of the ionic core as predicted by MOCC is clearly seen in our results. However, discrepancies between our experiment and MOCC results toward higher collision energies are observed. At energies above 1000 eV/u good agreement is found with CTMC results.

Analysis of photogenerated random telegraph signal in single electron detector (photo-SET).

PubMed

Troudi, M; Sghaier, Na; Kalboussi, A; Souifi, A

2010-01-04

In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiO(x = 1.5) interfaces.

Sex hormones and quantitative ultrasound parameters at the heel in men and women from the general population.

PubMed

Pätzug, Konrad; Friedrich, Nele; Kische, Hanna; Hannemann, Anke; Völzke, Henry; Nauck, Matthias; Keevil, Brian G; Haring, Robin

2017-12-01

The present study investigates potential associations between liquid chromatography-mass spectrometry (LC-MS) measured sex hormones, dehydroepiandrosterone sulphate, sex hormone-binding globulin (SHBG) and bone ultrasound parameters at the heel in men and women from the general population. Data from 502 women and 425 men from the population-based Study of Health in Pomerania (SHIP-TREND) were used. Cross-sectional associations of sex hormones including testosterone (TT), calculated free testosterone (FT), dehydroepiandrosterone sulphate (DHEAS), androstenedione (ASD), estrone (E1) and SHBG with quantitative ultrasound (QUS) parameters at the heel, including broadband ultrasound attenuation (BUA), speed of sound (SOS) and stiffness index (SI) were examined by analysis of variance (ANOVA) and multivariable quantile regression models. Multivariable regression analysis showed a sex-specific inverse association of DHEAS with SI in men (Beta per SI unit = - 3.08, standard error (SE) = 0.88), but not in women (Beta = - 0.01, SE = 2.09). Furthermore, FT was positively associated with BUA in men (Beta per BUA unit = 29.0, SE = 10.1). None of the other sex hormones (ASD, E1) or SHBG was associated with QUS parameters after multivariable adjustment. This cross-sectional population-based study revealed independent associations of DHEAS and FT with QUS parameters in men, suggesting a potential influence on male bone metabolism. The predictive role of DHEAS and FT as a marker for osteoporosis in men warrants further investigation in clinical trials and large-scale observational studies.

X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC

NASA Astrophysics Data System (ADS)

Tanuma, R.; Mori, D.; Kamata, I.; Tsuchida, H.

2013-07-01

This paper describes the strain-field analysis of threading edge dislocations (TEDs) and basal-plane dislocations (BPDs) in 4H-SiC using x-ray microbeam three-dimensional (3D) topography. This 3D topography enables quantitative strain-field analysis, which measures images of effective misorientations (Δω maps) around the dislocations. A deformation-matrix-based simulation algorithm is developed to theoretically evaluate the Δω mapping. Systematic linear calculations can provide simulated Δω maps (Δωsim maps) of dislocations with different Burgers vectors, directions, and reflection vectors for the desired cross-sections. For TEDs and BPDs, Δω maps are compared with Δωsim maps, and their excellent correlation is demonstrated. Two types of asymmetric reflections, high- and low-angle incidence types, are compared. Strain analyses are also conducted to investigate BPD-TED conversion near an epilayer/substrate interface in 4H-SiC.

[Infrared spectroscopy and XRD studies of coral fossils].

PubMed

Chen, Quan-li; Zhou, Guan-min; Yin, Zuo-wei

2012-08-01

Coral fossil is an old remain of multicellular animal on the earth, and formed by various geological processes. The structural characteristics and compositions of the coral fossils with different color and radial texture on the surface were studied by infrared absorption spectroscopy and X-ray powder diffraction analyses. The results show that the studied coral fossils mainly are composed of SiO2, and the radial microstructure characterized by the calcareous coral cross-section is preserved. It is formed by metasomatism by SiO2. The infrared absorption spectra of the coral fossil with different color and texture are essentially the same, showing typical infrared absorption spectra of the quartz jade. XRD analysis shows that the main components of the coral fossils with different color and texture are consistent and mainly composed of SiO2 with a trace amount of other minerals and without CaCO3.

Structure determination of a multilayer with an island-like overlayer using hard x-ray photoelectron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isomura, N., E-mail: isomura@mosk.tytlabs.co.jp; Kataoka, K.; Horibuchi, K.

We use hard X-ray photoelectron spectroscopy (HAXPES) to obtain the surface structure of a multilayer Au/SiO{sub 2}/Si substrate sample with an island-like overlayer. Photoelectron intensities are measured as a function of incident photon energy (PE) and take-off angle (TOA, measured from the sample surface). The Au layer coverage and Au and SiO{sub 2} layer thicknesses are obtained by the PE dependence, and are used for the following TOA analysis. The Au island lateral width in the cross section is obtained by the TOA dependence, including information about surface roughness, in consideration of the island shadowing at small TOAs. In bothmore » cases, curve-fitting analysis is conducted. The surface structure, which consists of layer thicknesses, overlayer coverage and island width, is determined nondestructively by a combination of PE and TOA dependent HAXPES measurements.« less

Formation of mono-layered gold nanoparticles in shallow depth of SiO 2 thin film by low-energy negative-ion implantation

NASA Astrophysics Data System (ADS)

Tsuji, H.; Arai, N.; Ueno, K.; Matsumoto, T.; Gotoh, N.; Adachi, K.; Kotaki, H.; Gotoh, Y.; Ishikawa, J.

2006-01-01

Mono-layered gold nanoparticles just below the surface of silicon oxide film have been formed by a gold negative-ion implantation at a very low-energy, where the deviation of implanted atoms was sufficiently narrow comparing to the size of nanoparticles. Gold negative ions were implanted into SiO2 thin films on Si substrate at energies of 35, 15 and 1 keV. The samples were annealed in Ar flow for 1 h at 900 or 1000 °C. Cross-sectional TEM observation for the implantation at 1 keV showed existence of Au nanoparticles aligned in the same depth of 5 nm from the surface. The nanoparticles had almost same diameter of 7 nm. The nanoparticles were found to be gold single crystal from a high-resolution TEM image.

Nitridation of silicon by nitrogen neutral beam

NASA Astrophysics Data System (ADS)

Hara, Yasuhiro; Shimizu, Tomohiro; Shingubara, Shoso

2016-02-01

Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si3N4 layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si3N4 layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

Skin penetration of silicon dioxide microneedle arrays.

PubMed

Kim, Sangchae; Shetty, S; Price, D; Bhansali, S

2006-01-01

Out-of-plane hollow silicon dioxide microneedle arrays were fabricated and investigated to determine their efficacy for transdermal applications. The fabrication process of the SiO2 microneedles is described, and mechanical fracture forces were investigated on microneedles with different geometrical dimensions. Biomechanical characterization of the microneedles was performed to specifically test for reliable stratum corneum and skin insertion by changing the regulatory parameters such as needle width and cross-section.

Effect of channel coupling on the elastic scattering of lithium isotopes

NASA Astrophysics Data System (ADS)

Furumoto, T.; Suhara, T.; Itagaki, N.

2018-04-01

Herein, we investigated the channel coupling (CC) effect on the elastic scatterings of lithium (Li) isotopes (A =6 -9) for 12C and 28Si targets at E /A =50 -60 MeV. The wave functions of the Li isotopes were obtained using the stochastic multi-configuration mixing method based on the microscopic-cluster model. The proton radii of the 7Li, 8Li, and 9Li nuclei became smaller as the number of valence neutrons increased. The valence neutrons in the 8Li and 9Li nuclei exhibited a glue-like behavior, thereby attracting the α and t clusters. Based on the transition densities derived from these microscopic wave functions, the elastic-scattering cross section was calculated using a microscopic coupled-channel method with a complex G -matrix interaction. The existing experimental data for the elastic scatterings of the Li isotopes and 10Be nuclei were well reproduced. The Li isotope elastic cross sections were demonstrated for the 12C and 28Si targets at E /A =53 MeV. The glue-like effect of the valence neutrons on the Li isotope was clearly demonstrated by the CC effect on elastic scattering. Finally, we realize that the valence neutrons stabilized the bindings of the core parts and the CC effect related to core excitation was indeed reduced.

Dental caries risk indicators in early childhood and their association with caries polarization in adolescence: a cross-sectional study.

PubMed

Zemaitiene, Migle; Grigalauskiene, Ruta; Andruskeviciene, Vilija; Matulaitiene, Zivile Kristina; Zubiene, Jurate; Narbutaite, Julija; Slabsinskiene, Egle

2016-07-02

Based on the hypothesis that biological and social risks accumulate during life, it is important to identify possible dental caries risk indicators from the life course of early childhood and assess their association with caries polarization in adolescence. A cross-sectional design was applied to the study, and a multistage cluster sampling method used to draw a representative sample of 1063 18-year-old Lithuanian adolescents. The dental examinations were performed according to the methodology for oral status evaluation recommended by the World Health Organization. Parents of the participating adolescents completed a self-administered questionnaire about their children's life course during early childhood. The interdependence of characteristics was evaluated by chi-square (χ (2)) and Student's (t) criteria. A multivariate logistic regression model with the Significant Caries (SiC) index as an outcome was performed. The mean scores for the number of decayed, missing, and filled teeth (DMFT) and decayed teeth (DT) in the SiC positive group were higher than the corresponding values in the SiC negative group (6.14 [SD, 2.30] and 1.67 [SD, 2.02] vs 1.28 [SD, 1.11] and 0.34 [SD, 0.69], p < 0.001, respectively). Three dental caries risk indicators were identified that were independently associated with a SiC positive outcome: gender(OR = 1.32 [95 % CI: 1.01-1.73]), earlier eruption of the first primary tooth(OR = 1.43 [95 % CI: 1.03-1.97]), and past caries experience in the primary dentition (OR = 1.62 [95 % CI:1.22-2.14]). These study findings provide reliable evidence that gender, earlier eruption of the first primary tooth, and past caries experience in the primary dentition should be considered to be dental caries risk indicators and may have an adverse effect on caries polarization in adolescence.

Kinetics of color center formation in silica irradiated with swift heavy ions: Thresholding and formation efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manzano-Santamaria, J.; Euratom/CIEMAT Fusion Association, Madrid; Olivares, J.

2012-10-08

We have determined the cross-section {sigma} for color center generation under single Br ion impacts on amorphous SiO{sub 2}. The evolution of the cross-sections, {sigma}(E) and {sigma}(S{sub e}), show an initial flat stage that we associate to atomic collision mechanisms. Above a certain threshold value (S{sub e} > 2 keV/nm), roughly coinciding with that reported for the onset of macroscopic disorder (compaction), {sigma} shows a marked increase due to electronic processes. In this regime, a energetic cost of around 7.5 keV is necessary to create a non bridging oxygen hole center-E Prime (NBOHC/E Prime ) pair, whatever the input energy.more » The data appear consistent with a non-radiative decay of self-trapped excitons.« less

Determination of K shell absorption jump factors and jump ratios of 3d transition metals by measuring K shell fluorescence parameters.

PubMed

Kaçal, Mustafa Recep; Han, İbrahim; Akman, Ferdi

2015-01-01

Energy dispersive X-ray fluorescence technique (EDXRF) has been employed for measuring K-shell absorption jump factors and jump ratios for Ti, Cr, Fe, Co, Ni and Cu elements. The jump factors and jump ratios for these elements were determined by measuring K shell fluorescence parameters such as the Kα X-ray production cross-sections, K shell fluorescence yields, Kβ-to-Kα X-rays intensity ratios, total atomic absorption cross sections and mass attenuation coefficients. The measurements were performed using a Cd-109 radioactive point source and an Si(Li) detector in direct excitation and transmission experimental geometry. The measured values for jump factors and jump ratios were compared with theoretically calculated and the ones available in the literature. Copyright © 2014 Elsevier Ltd. All rights reserved.

Probing Neutron-Skin Thickness of Unstable Nuclei with Total Reaction Cross Sections

NASA Astrophysics Data System (ADS)

Horiuchi, Wataru; Suzuki, Yasuyuki; Inakura, Tsunenori

We present our recent analysis of the total reaction cross sections, σR, of unstable nuclei and discuss their sensitivity to the neutron-skin thickness. The σR is calculated with the Glauber model using projectile densities obtained with the Skyrme-Hartree-Fock method on the three-dimensional coordinate space. We cover 91 nuclei of O, Ne, Mg, Si, S, Ca, and Ni isotopes. Defining a reaction radius, aR = √{σ R/π } , to characterize the nuclear size and target (proton or 12C) dependence, we see the 12C target probes the matter radius while the proton target is sensitive to the skin-thickness. We find an empirical formula for expressing aR with the point matter radius and the skin thickness, which can be used to determine the skin thickness.

Effect of deformation and orientation on spin orbit density dependent nuclear potential

NASA Astrophysics Data System (ADS)

Mittal, Rajni; Kumar, Raj; Sharma, Manoj K.

2017-11-01

Role of deformation and orientation is investigated on spin-orbit density dependent part VJ of nuclear potential (VN=VP+VJ) obtained within semi-classical Thomas Fermi approach of Skyrme energy density formalism. Calculations are performed for 24-54Si+30Si reactions, with spherical target 30Si and projectiles 24-54Si having prolate and oblate shapes. The quadrupole deformation β2 is varying within range of 0.023 ≤ β2 ≤0.531 for prolate and -0.242 ≤ β2 ≤ -0.592 for oblate projectiles. The spin-orbit dependent potential gets influenced significantly with inclusion of deformation and orientation effect. The spin-orbit barrier and position gets significantly influenced by both the sign and magnitude of β2-deformation. Si-nuclei with β22<0 have higher spin-orbit barrier (compact spin-orbit configuration) in comparison to systems with β2>0. The possible role of spin-orbit potential on barrier characteristics such as barrier height, barrier curvature and on the fusion pocket is also probed. In reference to prolate and oblate systems, the angular dependence of spin-orbit potential is further studied on fusion cross-sections.

Slow Collisions of Si3+ with Atomic Hydrogen

NASA Astrophysics Data System (ADS)

Joseph, D. C.; Gu, J.-P.; Saha, B. C.; Liebermann, H. P.; Funke, P.; Buenker, R. J.

2010-03-01

Low energy electron capture from hydrogen atom by multi-charged ions continues to be of interest and applications include both magnetically confined fusion and astrophysical plasmas. The charge exchange process reported here, Si^3+ + H -> Si^2+ + H^+ is an important destruction mechanism of Si^3+ in photo-ionized gas. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si^3+, with neutrals in the cometary gas vapor. The state selective cross sections are evaluated using the full quantum [1] and semi-classical molecular orbital close coupling (MOCC) [2] methods. Adiabatic potentials and wave functions for a number of low-lying singlet and triplet states of and symmetry are calculated wing the MRD-CI package [3]. Details will be presented at the conference. [4pt] [1] L. B. Zhao, D. C. Joseph, B. C. Saha, H. P. Liebermann, P. Funke and R. J. Buenker, Phys. Rev A, 79, 034701 (1009).[0pt] [2] M. Kimura and N. F. Lane, At. Mol. Opt. Phys 26, 79 (1990).[0pt] [3] R. J. Buenker, ``Current Aspects of Quantum Chemistry 1981, Vol 21, edited by R. Carbo (Elsevier, Amsterdam) p 17.

Switching properties of SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3 capacitor grown on Cu-coated Si substrate measured at various temperatures

NASA Astrophysics Data System (ADS)

Chen, J. H.; Liu, B. T.; Li, C. R.; Li, X. H.; Dai, X. H.; Guo, J. X.; Zhou, Y.; Wang, Y. L.; Zhao, Q. X.; Ma, L. X.

2014-09-01

SrRuO3(SRO)/Ni-Al/Cu/Ni-Al/SiO2/Si heterostructures annealed at various temperatures are found to remain intact after 750 \\circ\\text{C} annealing. Moreover, a SRO/Pb(Zr0.4Ti0.6)O3 (PZT)/SRO capacitor is grown on a Ni-Al/Cu/Ni-Al/SiO2/Si heterostructure, which is tested up to 100 \\circ\\text{C} to investigate the reliability of the memory capacitor. It is found that besides the good fatigue resistance and retention characteristic, the capacitor, measured at 5 V and room temperature, possesses a large remnant polarization of 25.0 μ \\text{C/cm}2 and a small coercive voltage of 0.83 V, respectively. Its dominant leakage current behavior satisfies the space-charge-limited conduction at various temperatures. Very clear interfaces can be observed from the cross-sectional images of transmission electron microscopy, indicating that the Ni-Al film can be used as a diffusion barrier layer for copper metallization as well as a conducting barrier layer between copper and oxide layer.

Effect of Rotating Mold Speed on Microstructure of Al LM6 Hollow Cylinder Fabricated Using Centrifugal Method

NASA Astrophysics Data System (ADS)

Kohnizio Mahli, Maximus; Jamian, Saifulnizan; Ismail, Al Emran; Nor, Nik Hisyamudin Muhd; Nor, Mohd Khir Mohd; Azhar Kamarudin, Kamarul

2017-10-01

Al LM6 hollow cylinder is fabricated using horizontal centrifugal casting which produce a very fine grain on the outer surface of the structure. In this study, the effect of motor speed and pouring temperature on the microstructure of Al LM6 hollow cylinder is determined. The speed of the motor used during casting are 1300rpm, 1500rpm and 1700rpm and the pouring temperature are 690°C, 710°C and 725°C. The Al LM6 hollow cylinder is produced by pouring the molten Al LM6 into a cylindrical casting mold which is connected with a shaft and it is rotated by motor until it is solidified. Then, the cross-section is observed using OM and SEM/EDS. From the microstructure observation, the distributions of Si are more concentrated at the inner parts and the size of Si is bigger at the inner parts. The result shows that the Si particles at the inner part which is fabricated at the highest motor speed (1700rpm) have the most Si particles compared with the Si particles that are casted with other motor speeds.

On the limits to Ti incorporation into Si using pulsed laser melting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mathews, Jay, E-mail: jay.mathews@udayton.edu; Warrender, Jeffrey M.; Akey, Austin J.

2014-03-17

Fabrication of p-Si(111) layers with Ti levels well above the solid solubility limit was achieved via ion implantation of 15 keV {sup 48}Ti{sup +} at doses of 10{sup 12} to 10{sup 16} cm{sup −2} followed by pulsed laser melting using a Nd:YAG laser (FWHM = 6 ns) operating at 355 nm. All implanted layers were examined using cross-sectional transmission electron microscopy, and only the 10{sup 16} cm{sup −2} Ti implant dose showed evidence of Ti clustering in a microstructure with a pattern of Ti-rich zones. The liquid phase diffusivity and diffusive velocity of Ti in Si were estimated to be 9 × 10{sup −4} cm{sup 2}/s and (2 ± 0.5) × 10{sup 4} m/s,more » respectively. Using these results the morphological stability limit for planar resolidification of Si:Ti was evaluated, and the results indicate that attaining sufficient concentrations of Ti in Si to reach the nominal Mott transition in morphologically stable plane-front solidification should occur only for velocities so high as to exceed the speed limits for crystalline regrowth in Si(111)« less

Tribological Properties of TiO2/SiO2 Double Layer Coatings Deposited on CP-Ti

NASA Astrophysics Data System (ADS)

Çomakli, O.; Yazici, M.; Yetim, T.; Yetim, A. F.; Çelik, A.

In the present paper, the influences of different double layer on wear and scratch performances of commercially pure Titanium (CP-Ti) were investigated. TiO2/SiO2 and SiO2/TiO2 double layer coatings were deposited on CP-Ti by sol-gel dip coating process and calcined at 750∘C. The phase structure, cross-sectional morphology, composition, wear track morphologies, adhesion properties, hardness and roughness of uncoated and coated samples were characterized with X-ray diffraction, scanning electron microscopy (SEM), nano-indentation technique, scratch tester and 3D profilometer. Also, the tribological performances of all samples were investigated by a pin-on-disc tribo-tester against Al2O3 ball. Results showed that hardness, elastic modulus and adhesion resistance of double layer coated samples were higher than untreated CP-Ti. It was found that these properties of TiO2/SiO2 double layer coatings have higher than SiO2/TiO2 double layer coating. Additionally, the lowest friction coefficient and wear rates were obtained from TiO2/SiO2 double layer coatings. Therefore, it was seen that phase structure, hardness and film adhesion are important factors on the tribological properties of double layer coatings.

29Si NMR and SAXS investigation of the hybrid organic-inorganic glasses obtained by consolidation of the melting gels

PubMed Central

Jitianu, Andrei; Cadars, Sylvian; Zhang, Fan; Rodriguez, Gabriela; Picard, Quentin; Aparicio, Mario; Mosa, Jadra; Klein, Lisa C.

2017-01-01

This study is focused on structural characterization of hybrid glasses obtained by consolidation of melting gels. The melting gels were prepared in molar ratios of methyltriethoxysilane (MTES) and dimethyldiethoxysilane (DMDES) of 75%MTES-25%DMDES and 65%MTES-35%DMDES. Following consolidation, the hybrid glasses were characterized using Raman, 29Si and 13C Nuclear Magnetic Resonance (NMR) spectroscopies, synchrotron Small Angle X-Ray Scattering (SAXS) and scanning electron microscopy (SEM). Raman spectroscopy revealed the presence of Si-C bonds in the hybrid glasses and 8-membered ring structures in the Si-O-Si network. Qualitative NMR spectroscopy identified the main molecular species, while quantitative NMR data showed that the ratio of trimers (T) to dimers (D) varied between 4.6 and 3.8. Two-dimensional 29Si NMR data were used to identify two distinct types of T3 environments. SAXS data showed that the glasses are homogeneous across the nm to micrometer length scales. The scattering cross section was one thousand times lower than what is expected when phase separation occurs. The SEM images show a uniform surface without defects, in agreement with the SAXS results, which further supports that the hybrid glasses are nonporous. PMID:28262904

Group III impurities Si interstitials interaction caused by ion irradiation

NASA Astrophysics Data System (ADS)

Romano, L.; Piro, A. M.; De Bastiani, R.; Grimaldi, M. G.; Rimini, E.

2006-01-01

The off-lattice displacement of substitutional impurities (B, Ga) in Si caused by irradiation with energetic light ion beams has been investigated. Samples have been prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 × 1020 at/cm3 confined in a 300 nm thick surface region. The off-lattice displacement of the impurities was induced at room temperature (RT) by irradiation with high energy (>600 keV) light ion beams (H, He) and detected by the channelling technique along different axes, using the 11B(p,α)8Be reaction and standard RBS, for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation, until it saturates at χF < 1 suggesting a non-random displacement of the dopant. Although the precise value of χF depends on the channelling direction and dopant species, the off-lattice displacement rate, deduced from the χ versus interstitial fluence curve, only depends on the excess of Si self-interstitials (SiI) generated by the irradiating beam through a parameter σ that can be interpreted as an effective cross-section for the impurity-SiI interaction.

Improvement of desolvation and resilience of alginate binders for Si-based anodes in a lithium ion battery by calcium-mediated cross-linking.

PubMed

Yoon, Jihee; Oh, Dongyeop X; Jo, Changshin; Lee, Jinwoo; Hwang, Dong Soo

2014-12-14

Si-based anodes in lithium ion batteries (LIBs) have exceptionally high theoretical capacity, but the use of a Si-based anode in LIBs is problematic because the charging-discharging process can fracture the Si particles. Alginate and its derivatives show promise as Si particle binders in the anode. We show that calcium-mediated "egg-box" electrostatic cross-linking of alginate improves toughness, resilience, electrolyte desolvation of the alginate binder as a Si-binder for LIBs. Consequently, the improved mechanical properties of the calcium alginate binder compared to the sodium alginate binder and other commercial binders extend the lifetime and increase the capacity of Si-based anodes in LIBs.

Effect of siRNA silencing of inducible co-stimulatory molecule on myocardial cell hypertrophy after cardiac infarction in rats.

PubMed

Wang, W M; Liu, Z; Chen, G

2016-05-20

As the most common cardiac disease, myocardial infarction is followed by hypertrophy of cardiac myocytes and reconstruction of ventricular structure. The up-regulation of a series of factors including metalloproteinases, inflammatory factors, and growth factors after primary infarction lead to the hypertrophy, apoptosis, necrosis, and fibroblast proliferation in cardiac muscle tissues. Recent studies have reported on the potency of small interfering RNA (siRNA) in treating cardiac diseases. We thus investigated the efficacy of inducible co-stimulatory molecule (ICOS)-specific siRNA silencing in myocardial hypertrophy in a cardiac infarction rat model. This cardiac infarction model was prepared by ligating the left anterior descending coronary artery. ICOS-siRNA treatment was administered in parallel with non-sense siRNA. After 18 days, the cross-sectional area of cardiac muscle tissues and the left ventricle weight index were measured, along with ICOS mRNA and protein expression levels, and pathological staining. Compared to those in the control groups, in myocardial infarcted rats, the application of ICOS-siRNA effectively decreased the left ventricle weight index, as well as the surface area of cardiac myocytes. Both mRNA and protein levels of ICOS were also significantly decreased. HE staining was consistent with these results. In conclusion, ICOS-targeted siRNA can effectively silence gene expression of ICOS, and provided satisfactory treatment efficacy for myocardial cell hypertrophy after infarction.

Intimate Partner Violence Is Associated with Suicidality Among Low-Income Postpartum Women.

PubMed

Tabb, Karen M; Huang, Hsiang; Valdovinos, Miriam; Toor, Raman; Ostler, Teresa; Vanderwater, Erin; Wang, Yang; Menezes, Paulo Rossi; Faisal-Cury, Alexandre

2018-02-01

Although intimate partner violence (IPV) during perinatal period is more common than during other maternal health conditions, it receives less attention within research on maternal mortality rates. Given the risks for maternal mortality because of suicidality, the purpose of this investigation is to examine the risk of suicidal ideation (SI) among postpartum women exposed to IPV. In this cross-sectional study, participants were recruited between May 2005 and March 2007 from primary care clinics in São Paulo, Brazil. A total of 701 postpartum women were included in the analysis. Postpartum SI was assessed using the clinical interview schedule-revised. IPV was assessed using a structured questionnaire previously validated in Brazilian populations. Crude and adjusted risk ratios with 95% confidence intervals (95% CI) were estimated using Poisson regression with robust variance to examine the association between IPV and the risk for postpartum SI. The prevalence of postpartum SI was 4%. Among those with postpartum SI, 70% reported IPV during the postpartum period. Compared with non-IPV counterparts, postpartum women who reported IPV had an increased risk for SI (relative risk [RR] 7.25, 95% CI: 3.23-16.27). In the fully adjusted model, the risk for SI remained significantly higher for women who experienced IPV than for those who did not (RR 3.02, 95% CI: 1.29-7.07). Postpartum women exposed to violence had a threefold greater risk of having suicidal thoughts.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

NASA Astrophysics Data System (ADS)

Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

2016-03-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metalmore » organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.« less

Alleviation of Al Toxicity by Si Is Associated with the Formation of Al-Si Complexes in Root Tissues of Sorghum.

PubMed

Kopittke, Peter M; Gianoncelli, Alessandra; Kourousias, George; Green, Kathryn; McKenna, Brigid A

2017-01-01

Silicon is reported to reduce the toxic effects of Al on root elongation but the in planta mechanism by which this occurs remains unclear. Using seedlings of soybean ( Glycine max ) and sorghum ( Sorghum bicolor ), we examined the effect of up to 2 mM Si on root elongation rate (RER) in Al-toxic nutrient solutions. Synchrotron-based low energy X-ray fluorescence (LEXRF) was then used for the in situ examination of the distribution of Al and Si within cross-sections cut from the apical tissues of sorghum roots. The addition of Si potentially increased RER in Al-toxic solutions, with RER being up to ca. 0.3 mm h -1 (14%) higher for soybean and ca. 0.2 mm h -1 (17%) higher for sorghum relative to solutions without added Si. This improvement in RER could not be attributed to a change in Al-chemistry of the bulk nutrient solution, nor was it due to a change in the concentration of Al within the apical (0-10 mm) root tissues. Using LEXRF to examine sorghum, it was demonstrated that in roots exposed to both Al and Si, much of the Al was co-located with Si in the mucigel and outer apoplast. These observations suggest that Si reduces the toxicity of Al in planta through formation of Al-Si complexes in mucigel and outer cellular tissues, thereby decreasing the binding of Al to the cell wall where it is known to inhibit wall loosening as required for cell elongation.

Multi-task learning for cross-platform siRNA efficacy prediction: an in-silico study

PubMed Central

2010-01-01

Background Gene silencing using exogenous small interfering RNAs (siRNAs) is now a widespread molecular tool for gene functional study and new-drug target identification. The key mechanism in this technique is to design efficient siRNAs that incorporated into the RNA-induced silencing complexes (RISC) to bind and interact with the mRNA targets to repress their translations to proteins. Although considerable progress has been made in the computational analysis of siRNA binding efficacy, few joint analysis of different RNAi experiments conducted under different experimental scenarios has been done in research so far, while the joint analysis is an important issue in cross-platform siRNA efficacy prediction. A collective analysis of RNAi mechanisms for different datasets and experimental conditions can often provide new clues on the design of potent siRNAs. Results An elegant multi-task learning paradigm for cross-platform siRNA efficacy prediction is proposed. Experimental studies were performed on a large dataset of siRNA sequences which encompass several RNAi experiments recently conducted by different research groups. By using our multi-task learning method, the synergy among different experiments is exploited and an efficient multi-task predictor for siRNA efficacy prediction is obtained. The 19 most popular biological features for siRNA according to their jointly importance in multi-task learning were ranked. Furthermore, the hypothesis is validated out that the siRNA binding efficacy on different messenger RNAs(mRNAs) have different conditional distribution, thus the multi-task learning can be conducted by viewing tasks at an "mRNA"-level rather than at the "experiment"-level. Such distribution diversity derived from siRNAs bound to different mRNAs help indicate that the properties of target mRNA have important implications on the siRNA binding efficacy. Conclusions The knowledge gained from our study provides useful insights on how to analyze various cross-platform RNAi data for uncovering of their complex mechanism. PMID:20380733

Multi-task learning for cross-platform siRNA efficacy prediction: an in-silico study.

PubMed

Liu, Qi; Xu, Qian; Zheng, Vincent W; Xue, Hong; Cao, Zhiwei; Yang, Qiang

2010-04-10

Gene silencing using exogenous small interfering RNAs (siRNAs) is now a widespread molecular tool for gene functional study and new-drug target identification. The key mechanism in this technique is to design efficient siRNAs that incorporated into the RNA-induced silencing complexes (RISC) to bind and interact with the mRNA targets to repress their translations to proteins. Although considerable progress has been made in the computational analysis of siRNA binding efficacy, few joint analysis of different RNAi experiments conducted under different experimental scenarios has been done in research so far, while the joint analysis is an important issue in cross-platform siRNA efficacy prediction. A collective analysis of RNAi mechanisms for different datasets and experimental conditions can often provide new clues on the design of potent siRNAs. An elegant multi-task learning paradigm for cross-platform siRNA efficacy prediction is proposed. Experimental studies were performed on a large dataset of siRNA sequences which encompass several RNAi experiments recently conducted by different research groups. By using our multi-task learning method, the synergy among different experiments is exploited and an efficient multi-task predictor for siRNA efficacy prediction is obtained. The 19 most popular biological features for siRNA according to their jointly importance in multi-task learning were ranked. Furthermore, the hypothesis is validated out that the siRNA binding efficacy on different messenger RNAs(mRNAs) have different conditional distribution, thus the multi-task learning can be conducted by viewing tasks at an "mRNA"-level rather than at the "experiment"-level. Such distribution diversity derived from siRNAs bound to different mRNAs help indicate that the properties of target mRNA have important implications on the siRNA binding efficacy. The knowledge gained from our study provides useful insights on how to analyze various cross-platform RNAi data for uncovering of their complex mechanism.

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Mota-Santiago, P.; Vazquez, H.; Bierschenk, T.; Kremer, F.; Nadzri, A.; Schauries, D.; Djurabekova, F.; Nordlund, K.; Trautmann, C.; Mudie, S.; Ridgway, M. C.; Kluth, P.

2018-04-01

The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN x :H and SiO x :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN x :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO x :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

Phase transformations induced by spherical indentation in ion-implanted amorphous silicon

NASA Astrophysics Data System (ADS)

Haberl, B.; Bradby, J. E.; Ruffell, S.; Williams, J. S.; Munroe, P.

2006-07-01

The deformation behavior of ion-implanted (unrelaxed) and annealed ion-implanted (relaxed) amorphous silicon (a-Si) under spherical indentation at room temperature has been investigated. It has been found that the mode of deformation depends critically on both the preparation of the amorphous film and the scale of the mechanical deformation. Ex situ measurements, such as Raman microspectroscopy and cross-sectional transmission electron microscopy, as well as in situ electrical measurements reveal the occurrence of phase transformations in all relaxed a-Si films. The preferred deformation mode of unrelaxed a-Si is plastic flow, only under certain high load conditions can this state of a-Si be forced to transform. In situ electrical measurements have revealed more detail of the transformation process during both loading and unloading. We have used ELASTICA simulations to obtain estimates of the depth of the metallic phase as a function of load, and good agreement is found with the experiment. On unloading, a clear change in electrical conductivity is observed to correlate with a "pop-out" event on load versus penetration curves.

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

NASA Astrophysics Data System (ADS)

Shi, Bei; Li, Qiang; Lau, Kei May

2018-05-01

Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

/sup 18/O + /sup 12/C fusion-evaporation reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heusch, B; Beck, C; Coffin, J P

1980-01-01

A study of the /sup 18/O + /sup 12/C fusion evaporation reaction has been undertaken for 2 reasons: to make a systematic study of the formation cross section for each individual evaporation residue over a broad excitation energy region in the compound nucleus /sup 30/Si:30 to 62 MeV; and to compare all results to fusion-evaporation calculations done in the framework of the Hauser-Feschbach statistical model.

K-shell Photoionization of Na-like to Cl-like Ions of Mg, Si, S, Ar, and Ca

NASA Technical Reports Server (NTRS)

Witthoeft, M. C.; Garcia, J.; Kallman, T. R.; Bautista, M. A.; Mendoza, C.; Palmeri, P.; Quinet, P.

2010-01-01

We present R-matrix calculations of photoabsorption and photoionization cross sections across the K edge of Mg, Si, S, Ar, and Ca ions with more than 10 electrons. The calculations include the effects of radiative and Auger damping by means of an optical potential. The wave functions are constructed from single-electron. orbital bases obtained using a Thomas-Fermi-Dirac statistical model potential. Configuration interaction is considered among all states up to n = 3. The damping processes affect the resonances converging to the K-thresholds causing them to display symmetric profiles of constant width that smear the otherwise sharp edge at the photoionization threshold. These data are important for the modeling of features found in photoionized plasmas.

Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC

NASA Astrophysics Data System (ADS)

Suo, Hiromasa; Tsukimoto, Susumu; Eto, Kazuma; Osawa, Hiroshi; Kato, Tomohisa; Okumura, Hajime

2018-06-01

The increase in threading dislocation during the initial stage of physical vapor transport growth of n-type 4H-SiC crystals was evaluated by cross-sectional X-ray topography. Crystals were grown under two different temperature conditions. A significant increase in threading dislocation was observed in crystals grown at a high, not low, temperature. The local strain distribution in the vicinity of the grown/seed crystal interface was evaluated using the electron backscatter diffraction technique. The local nitrogen concentration distribution was also evaluated by time-of-flight secondary ion mass spectrometry. We discuss the relationship between the increase in threading dislocation and the local strain due to thermal stress and nitrogen concentration.

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitoma, Nobuhiko, E-mail: MITOMA.Nobuhiko@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

SiN-assisted polarization-insensitive multicore fiber to silicon photonics interface

NASA Astrophysics Data System (ADS)

Poulopoulos, Giannis N.; Kalavrouziotis, Dimitrios; Mitchell, Paul; Macdonald, John R.; Bakopoulos, Paraskevas; Avramopoulos, Hercules

2015-06-01

We demonstrate a polarization-insensitive coupler interfacing multicore-fiber (MCF) to silicon waveguides. It comprises a 3D glass fanout transforming the circular MCF core-arrangement to linear and performing initial tapering, followed by a Spot-Size-Converter on the silicon chip. Glass waveguides are formed of multiple overlapped modification elements and appropriate offsetting thereof yields tapers with symmetric cross-section. The Spot-Size-Converter is an inverselytapered silicon waveguide with a tapered polymer overcladding where light is initially coupled, whereas phase-matching gradually shifts it towards the silicon core. Co-design of the glass fanout and Spot-Size-Converter obtains theoretical loss below 1dB for the overall Si-to-MCF transition in both polarizations.

Effect of UV-ozone treatment on poly(dimethylsiloxane) membranes: surface characterization and gas separation performance.

PubMed

Fu, Ywu-Jang; Qui, Hsuan-zhi; Liao, Kuo-Sung; Lue, Shingjiang Jessie; Hu, Chien-Chieh; Lee, Kueir-Rarn; Lai, Juin-Yih

2010-03-16

A thin SiO(x) selective surface layer was formed on a series of cross-linked poly(dimethylsiloxane) (PDMS) membranes by exposure to ultraviolet light at room temperature in the presence of ozone. The conversion of the cross-linked polysiloxane to SiO(x) was monitored by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray (EDX) microanalysis, contact angle analysis, and atomic force microscopy (AFM). The conversion of the cross-linked polysiloxane to SiO(x) increased with UV-ozone exposure time and cross-linking agent content, and the surface possesses highest conversion. The formation of a SiO(x) layer increased surface roughness, but it decreased water contact angle. Gas permeation measurements on the UV-ozone exposure PDMS membranes documented interesting gas separation properties: the O(2) permeability of the cross-linked PDMS membrane before UV-ozone exposure was 777 barrer, and the O(2)/N(2) selectivity was 1.9; after UV-ozone exposure, the permeability decreased to 127 barrer while the selectivity increased to 5.4. The free volume depth profile of the SiO(x) layer was investigated by novel slow positron beam. The results show that free volume size increased with the depth, yet the degree of siloxane conversion to SiO(x) does not affect the amount of free volume.

Y balance test has no correlation with the Stability Index of the Biodex Balance System.

PubMed

Almeida, Gabriel Peixoto Leão; Monteiro, Isabel Oliveira; Marizeiro, Débora Fortes; Maia, Laísa Braga; de Paula Lima, Pedro Olavo

2017-02-01

A cross-sectional study design. The Stability Index of the Biodex Balance System (SI-BBS) and Y Balance Test (YBT) has been used in studies assessing postural stability but no studies have verified the association of the YBT with the SI-BBS. To analyze the association of the Y Balance Test (YBT) with the Stability Index of the Biodex Balance System (SI-BBS) to evaluate postural stability. Forty participants who engaged in recreational physical activities, 12 of whom had a history of injury to the lower limbs. Was used the SI-BBS and the anterior, posterolateral, posteromedial, and composite measures of the YBT. The order of execution of the tests and of the lower limbs evaluated was randomized and blind tested by two evaluators. Pearson's correlation coefficient was used to check the strength of the relationship between the distances achieved on the YBT and the SI-BBS. The YBT showed excellent reliability in the anterior, posteromedial, and posterolateral directions. However, the YBT showed no statistically significant correlation with any variables in the SI-BBS, indicating poor validity between YBT and SI-BBS assessments of postural stability in people with and without history of lower limb injuries. The results of this study showed the YBT is not correlated with the SI-BBS as an assessment of postural stability. This finding has implications for researchers and clinicians using YBT results as the only measure of postural stability. Copyright © 2016 Elsevier Ltd. All rights reserved.

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

NASA Astrophysics Data System (ADS)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Sensitivity and uncertainty analysis for the tritium breeding ratio of a DEMO fusion reactor with a helium cooled pebble bed blanket

NASA Astrophysics Data System (ADS)

Nunnenmann, Elena; Fischer, Ulrich; Stieglitz, Robert

2017-09-01

An uncertainty analysis was performed for the tritium breeding ratio (TBR) of a fusion power plant of the European DEMO type using the MCSEN patch to the MCNP Monte Carlo code. The breeding blanket was of the type Helium Cooled Pebble Bed (HCPB), currently under development in the European Power Plant Physics and Technology (PPPT) programme for a fusion power demonstration reactor (DEMO). A suitable 3D model of the DEMO reactor with HCPB blanket modules, as routinely used for blanket design calculations, was employed. The nuclear cross-section data were taken from the JEFF-3.2 data library. For the uncertainty analysis, the isotopes H-1, Li-6, Li-7, Be-9, O-16, Si-28, Si-29, Si-30, Cr-52, Fe-54, Fe-56, Ni-58, W-182, W-183, W-184 and W-186 were considered. The covariance data were taken from JEFF-3.2 where available. Otherwise a combination of FENDL-2.1 for Li-7, EFF-3 for Be-9 and JENDL-3.2 for O-16 were compared with data from TENDL-2014. Another comparison was performed with covariance data from JEFF-3.3T1. The analyses show an overall uncertainty of ± 3.2% for the TBR when using JEFF-3.2 covariance data with the mentioned additions. When using TENDL-2014 covariance data as replacement, the uncertainty increases to ± 8.6%. For JEFF-3.3T1 the uncertainty result is ± 5.6%. The uncertainty is dominated by O-16, Li-6 and Li-7 cross-sections.

The Xenon1T Dark Matter Search Experiment

NASA Astrophysics Data System (ADS)

Aprile, Elena

The worldwide race towards direct dark matter detection in the form of Weakly Interacting Massive Particles (WIMPs) has been dramatically accelerated by the remarkable progress and evolution of liquid xenon time projection chambers (LXeTPCs). With a realistic discovery potential, Xenon100 has already reached a sensitivity of 7 × 10-45 cm2, and continues to accrue data at the Laboratori Nazionali del Gran Sasso (LNGS) in Italy towards its ultimate sensitivity reach at the σ SI ˜ 2 × 10-45 cm2 level for the spin-independent WIMP-nucleon cross-section. To fully explore the favoured parameter space for WIMP dark matter in search of a first robust and statistically significant discovery, or to confirm any hint of a signal from Xenon100, the next phase of the Xenon program will be a detector at the ton scale - Xenon1T. The Xenon1T detector, based on 2.2 ton of LXe viewed by low radioactivity photomultiplier tubes and housed in a water Cherenkov muon veto at LNGS, is presented. With an experimental aim of probing WIMP interaction cross-sections above of order σ SI ˜ 2 × 10-47 cm2 within 2 years of operation, Xenon1T will provide the sensitivity to probe a particularly favourable region of electroweak physics on a timescale compatible with complementary ground and satellite based indirect searches and with accelerator dark matter searches at the LHC. Indeed, for a σ SI ˜ 10-45 cm2 and 100 GeV/c2 WIMP mass, Xenon1T could detect of order 100 events in this exposure, providing statistics for placing significant constraints on the WIMP mass.

Search for ternary fission of chromium-48

NASA Astrophysics Data System (ADS)

Dummer, Andrew K.

1999-07-01

Both alpha cluster model calculations and macroscopic energy calculations that allow for a double-neck shape of the compound nucleus suggest the possibility of a novel three 16O, chain-like configuration in 48 Cr. Such a configuration might lead to an enhanced cross section for three-16O breakup. To explore this possibility, the three-body exit channels for the 36Ar + 12C reaction at a beam energy of 210 MeV have been studied. The cross section for 16O + 16O + 16O breakup has been deduced and has been found to be in excess of what would be expected to result from a sequential binary fission process. However, the observation of a similarly enhanced 12C + 16O + 20Ne breakup cross section suggests that the observed 16O + 16O + 16O yields might still be associated with a statistical fission process. The results are discussed in the context of the fission of light nuclear systems and a simple cluster model calculation. This latter, ``Harvey model'' calculation suggests a possible inhibition of the formation of a three- 16O chain configuration from the 36Ar + 12C entrance channel. A further measurement using the 20Ne + 28Si-entrance channel is suggested.

Coupled neutron--gamma multigroup--multitable cross sections for 29 materials pertinent to nuclear weapons effect calculations generated by LASL/TD Division

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandmeier, H.A.; Hansen, G.E.; Seamon, R.E.

This report lists 42-group, coupled, neutron -gamma cross sections for H, D, T, /sup 3/He, /sup 4/He, /sup 6/Li, /sup 7/Li, Be, /sup 10/B, /sup 11/B, C, N, O, Na, Mg, Ai, Si, Cl, A, K, Ca, Fe, Cu, W, Pb, /sup 235/U, /sup 238/U, / sup 239/Pu, and /sup 240/Pu. Most of these materials are used in nuclear- weaponseffects calculations, where the elements for air, ground, and sea water are needed. Further, lists are given of cross sections for materials used in nuclear weapons vulnerability calculations, such as the elements of high explosives as well as materials that willmore » undergo fusion and fission. Most of the common reactor materials are also listed. The 42 coupled neutron-gamma groups are split into 30 neutron groups (17 MeV through 1.39 x 10/sup -4/ eV) and 12 gamma groups (10 MeV through 0.01 MeV). Data sources and averaging schemes used for the development of these multigroup parameters are given. (119 tables) (auth)« less

Density functional calculations of multiphonon capture cross sections at defects in semiconductors

NASA Astrophysics Data System (ADS)

Barmparis, Georgios D.; Puzyrev, Yevgeniy S.; Zhang, X.-G.; Pantelides, Sokrates T.

2014-03-01

The theory of electron capture cross sections by multiphonon processes in semiconductors has a long and controversial history. Here we present a comprehensive theory and describe its implementation for realistic calculations. The Born-Oppenheimer and the Frank-Condon approximations are employed. The transition probability of an incoming electron is written as a product of an instantaneous electronic transition in the initial defect configuration and the line shape function (LSF) that describes the multiphonon processes that lead to lattice relaxation. The electronic matrix elements are calculated using the Projector Augmented Wave (PAW) method which yields the true wave functions while still employing a plane-wave basis. The LSF is calculated by employing a Monte Carlo method and the real phonon modes of the defect, calculated using density functional theory in the PAW scheme. Initial results of the capture cross section for a prototype system, namely a triply hydrogenated vacancy in Si are presented. The results are relevant for modeling device degradation by hot electron effects. This work is supported in part by the Samsung Advanced Institute of Technology (SAIT)'s Global Research Outreach (GRO) Program and by the LDRD program at ORNL.

Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

NASA Astrophysics Data System (ADS)

Ko, Hyunseok

Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding. We used grand canonical monte carlo to optimize the interface, as a part of the stepping stone for further study using the interface.

Silicon induced Fe deficiency affects Fe, Mn, Cu and Zn distribution in rice (Oryza sativa L.) growth in calcareous conditions.

PubMed

Carrasco-Gil, Sandra; Rodríguez-Menéndez, Sara; Fernández, Beatriz; Pereiro, Rosario; de la Fuente, Vicenta; Hernandez-Apaolaza, Lourdes

2018-04-01

A protective effect by silicon in the amelioration of iron chlorosis has recently been proved for Strategy 1 species, at acidic pH. However in calcareous conditions, the Si effect on Fe acquisition and distribution is still unknown. In this work, the effect of Si on Fe, Mn, Cu and Zn distribution was studied in rice (Strategy 2 species) under Fe sufficiency and deficiency. Plants (+Si or-Si) were grown initially with Fe, and then Fe was removed from the nutrient solution. The plants were then analysed using a combined approach including LA-ICP-MS images for each element of interest, the analysis of the Fe and Si concentration at different cell layers of root and leaf cross sections by SEM-EDX, and determining the apoplastic Fe, total micronutrient concentration and oxidative stress indexes. A different Si effect was observed depending on plant Fe status. Under Fe sufficiency, Si supply increased Fe root plaque formation, decreasing Fe concentration inside the root and increasing the oxidative stress in the plants. Therefore, Fe acquisition strategies were activated, and Fe translocation rate to the aerial parts was increased, even under an optimal Fe supply. Under Fe deficiency, +Si plants absorbed Fe from the plaque more rapidly than -Si plants, due to the previous activation of Fe deficiency strategies during the growing period (+Fe + Si). Higher Fe plaque formation due to Si supply during the growing period reduced Fe uptake and could activate Fe deficiency strategies in rice, making it more efficient against Fe chlorosis alterations. Silicon influenced Mn and Cu distribution in root. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

Melting relations in the MgO-MgSiO3 system up to 70 GPa

NASA Astrophysics Data System (ADS)

Ohnishi, Satoka; Kuwayama, Yasuhiro; Inoue, Toru

2017-06-01

Melting experiments in a binary system MgO-MgSiO3 were performed up to 70 GPa using a CO2 laser heated diamond anvil cell. The quenched samples were polished and analyzed by a dualbeam focused ion beam (FIB) and a field emission scanning electron microscope (FE-SEM), respectively. The liquidus phase and the eutectic composition were determined on the basis of textual and chemical analyses of sample cross sections. Our experimental results show that the eutectic composition is the Si/Mg molar ratio of 0.76 at 35 GPa and it decreases with increasing pressure. Above 45 GPa, it becomes relatively constant at about 0.64-0.65 Si/Mg molar ratio. Using our experimental data collected at a wide pressure range up to 70 GPa together with previous experimental data, we have constructed a thermodynamic model of the eutectic composition of the MgO-MgSiO3 system. The eutectic composition extrapolated to the pressure and temperature conditions at the base of the mantle is about 0.64 Si/Mg molar ratio. The modeled eutectic composition is quite consistent with a previous prediction from ab initio calculations (de Koker et al. in Earth Planet Sci Lett 361:58-63, 2013), suggesting that the simple assumption of a non-ideal regular solution model can well describe the melting relation of the MgO-MgSiO3 system at high pressure. Our results show that the liquidus phase changes from MgO-periclase to MgSiO3-bridgmanite at 35 GPa for the simplified pyrolite composition ( 0.7 Si/Mg molar ratio), while MgSiO3-bridgmanite is the liquidus phase at the entire lower mantle conditions for the chondritic composition ( 0.84 Si/Mg molar ratio).

Silicon and Plants: Current Knowledge and Technological Perspectives

PubMed Central

Luyckx, Marie; Hausman, Jean-Francois; Lutts, Stanley; Guerriero, Gea

2017-01-01

Elemental silicon (Si), after oxygen, is the second most abundant element in the earth’s crust, which is mainly composed of silicates. Si is not considered essential for plant growth and development, however, increasing evidence in the literature shows that this metalloid is beneficial to plants, especially under stress conditions. Indeed Si alleviates the toxic effects caused by abiotic stresses, e.g., salt stress, drought, heavy metals, to name a few. Biogenic silica is also a deterrent against herbivores. Additionally, Si ameliorates the vigor of plants and improves their resistance to exogenous stresses. The protective role of Si was initially attributed to a physical barrier fortifying the cell wall (e.g., against fungal hyphae penetration), however, several studies have shown that the action of this element on plants is far more complex, as it involves a cross-talk with the cell interior and an effect on plant metabolism. In this study the beneficial role of Si on plants will be discussed, by reviewing the available data in the literature. Emphasis will be given to the protective role of Si during (a)biotic stresses and in this context both priming and the effects of Si on endogenous phytohormones will be discussed. A whole section will be devoted to the use of silica (SiO2) nanoparticles, in the light of the interest that nanotechnology has for agriculture. The paper also discusses the potential technological aspects linked to the use of Si in agriculture and to modify/improve the physical parameters of plant fibers. The study indeed provides perspectives on the use of Si to increase the yield of fiber crops and to improve the thermal stability and tensile strength of natural fibers. PMID:28386269

Transcriptomic analysis between self- and cross-pollinated pistils of tea plants (Camellia sinensis).

PubMed

Ma, Qingping; Chen, Changsong; Zeng, Zhongping; Zou, Zhongwei; Li, Huan; Zhou, Qiongqiong; Chen, Xuan; Sun, Kang; Li, Xinghui

2018-04-25

Self-incompatibility (SI) is a major barrier that obstructs the breeding process in most horticultural plants including tea plants (Camellia sinensis). The aim of this study was to elucidate the molecular mechanism of SI in tea plants through a high throughput transcriptome analysis. In this study, the transcriptomes of self- and cross-pollinated pistils of two tea cultivars 'Fudingdabai' and 'Yulv' were compared to elucidate the SI mechanism of tea plants. In addition, the ion components and pollen tube growth in self- and cross-pollinated pistils were investigated. Our results revealed that both cultivars had similar pollen activities and cross-pollination could promote the pollen tube growth. In tea pistils, the highest ion content was potassium (K + ), followed by calcium (Ca 2+ ), magnesium (Mg 2+ ) and phosphorus (P 5+ ). Ca 2+ content increased after self-pollination but decreased after cross-pollination, while K + showed reverse trend with Ca 2+ . A total of 990 and 3 common differentially expressed genes (DEGs) were identified in un-pollinated vs. pollinated pistils and self- vs. cross-pollinated groups after 48 h, respectively. Function annotation indicated that three genes encoding UDP-glycosyltransferase 74B1 (UGT74B1), Mitochondrial calcium uniporter protein 2 (MCU2) and G-type lectin S-receptor-like serine/threonine-protein kinase (G-type RLK) might play important roles during SI process in tea plants. Ca 2+ and K + are important signal for SI in tea plants, and three genes including UGT74B1, MCU2 and G-type RLK play essential roles during SI signal transduction.

Quantitative analysis of vascular colonisation and angio-conduction in porous silicon-substituted hydroxyapatite with various pore shapes in a chick chorioallantoic membrane (CAM) model.

PubMed

Magnaudeix, Amandine; Usseglio, Julie; Lasgorceix, Marie; Lalloue, Fabrice; Damia, Chantal; Brie, Joël; Pascaud-Mathieu, Patricia; Champion, Eric

2016-07-01

The development of scaffolds for bone filling of large defects requires an understanding of angiogenesis and vascular guidance, which are crucial processes for bone formation and healing. There are few investigations on the ability of a scaffold to support blood vessel guidance and it this is of great importance because it relates to the quality and dispersion of the blood vessel network. This work reports an analysis of vascularisation of porous silicon-substituted hydroxyapatite (SiHA) bioceramics and the effects of pore shape on vascular guidance using an expedient ex ovo model, the chick embryo chorioallantoic membrane (CAM) assay. Image analysis of vascularised implants assessed the vascular density, fractal dimension and diameter of blood vessels at two different scales (the whole ceramic and pores alone) and was performed on model SiHA ceramics harbouring pores of various cross-sectional geometries (circles, square, rhombus, triangles and stars). SiHA is a biocompatible material which allows the conduction of blood vessels on its surface. The presence of pores did not influence angiogenesis related-parameters (arborisation, fractal dimension) but pore geometry affected the blood vessel guidance and angio-conductive potential (diameter and number of the blood vessels converging toward the pores). The measured angles of pore cross-section modulated the number and diameter of blood vessels converging to pores, with triangular pores appearing of particular interest. This result will be used for shaping ceramic scaffolds with specific porous architecture to promote vascular colonisation and osteointegration. An expedient and efficient method, using chick embryo chorioallantoic membrane (CAM) assays, has been set up to characterise quantitatively the angiogenesis and the vascular conduction in scaffolds. This approach complements the usual cell culture assays and could replace to a certain extent in vivo experiments. It was applied to silicon-substituted hydroxyapatite porous bioceramics with various pore shapes. The material was found to be biocompatible, allowing the conduction of blood vessels on its surface. The presence of pores does not influence the angiogenesis but the pore shape affects the blood vessel guidance and angio-conductive potential. Pores with triangular cross-section appear particularly attractive for the further design of scaffolds in order to promote their vascular colonisation and osteointegration and improve their performances. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

The Infrared Handbook

DTIC Science & Technology

1978-01-01

wavelength, infrared range, SW1R, from 1.6 to 5.6 jum and in the long wavelength infrared, LWIR , from 7.0 to 23.0 fun. Figure 3-87 shows a profile of...si n n Wavelength (M ra) Fig. 3-86. Sample spectrum scan (vertical) from a LWIR spectrometer aboard a Black Brant rocket flown from Poker Flat...radiation of a finite cross-section. Laser, lidar, or search-light probes fall into this category. Because of the nonuniform illumination of the

Mediators of the relation between war experiences and suicidal ideation among former child soldiers in Northern Uganda: the WAYS study.

PubMed

Amone-P'Olak, Kennedy; Lekhutlile, Tlholego Molemane; Meiser-Stedman, Richard; Ovuga, Emilio

2014-09-24

Globally, suicide is a public health burden especially in the aftermath of war. Understanding the processes that define the path from previous war experiences (WE) to current suicidal ideation (SI) is crucial for defining opportunities for interventions. We assessed the extent to which different types of previous WE predict current SI and whether post-war hardships and depression mediate the relations between WE and SI among former child soldiers (FCS) in Northern Uganda. We performed cross-sectional analyses with a sample of 539 FCS (61% male) participating in an on-going longitudinal study. The influence of various types of previous WE on current SI and mediation by post-war hardships and depression were assessed by regression analyses. The following types of war experiences: "witnessing violence", "direct personal harm", "deaths", "Involvement in hostilities", "sexual abuse" and "general war experiences" significantly predicted current SI in a univariable analyses whereas "direct personal harm", "involvement in hostilities", and "sexual abuse" independently predicted current SI in a multivariable analyses. General WE were linked to SI (β = 0.18 (95% CI 0.10 to 0.25)) through post-war hardships (accounting for 69% of the variance in their relationship) and through depression/anxiety (β = 0.17 (95% CI 0.12 to 0.22)) accounting for 65% of the variance in their relationship. The direct relationship between previous WE and current SI reduced but remained marginally significant (β = .08, CI: (.01, .17) for depression/anxiety but not for post-war hardships (β = .09, CI: (-.03, .20). Types of WE should be examined when assessing risks for SI. Interventions to reduce SI should aim to alleviate post-war hardships and treat depression/anxiety.

Effects of SiO2 substitution on wettability of laser deposited Ca-P biocoating on Ti-6Al-4V.

PubMed

Yang, Yuling; Paital, Sameer R; Dahotre, Narendra B

2010-09-01

Silicon (Si) substitution in the crystal structure of calcium phosphate (CaP) ceramics has proved to generate materials with improved bioactivity than their stoichiometric counterpart. In light of this, in the current work, 100 wt% hydroxyapatite (HA) precursor and 25 wt% SiO(2)-HA precursors were used to prepare bioactive coatings on Ti-6Al-4V substrates by a laser cladding technique. The effects of SiO(2) on phase constituents, crystallite size, surface roughness, and surface energy of the CaP coatings were studied. Furthermore, on the basis of these results, the effects and roles of SiO(2) substitution in HA were systematically discussed. X-ray diffraction analysis of the coated samples indicated the presence of various phases such as CaTiO(3), Ca(2)SiO(4), Ca(3)(PO(4))(2), TiO(2) (Anatase), and TiO(2) (Rutile). The addition of SiO(2) in the HA precursor resulted in the refinement of grain size. Confocal laser microscopy characterization of the surface morphology demonstrated an improved surface roughness for samples with 25 wt% SiO(2)-HA precursor compared to the samples with 100 wt% HA precursor processed at 125 cm/min laser speed. The addition of SiO(2) in the HA precursor resulted in the highest surface energy, increased hydrophilicity, and improved biomineralization as compared to the control (untreated Ti-6Al-4V) and the sample with 100 wt% HA as precursor. The microstructural evolution observed using a scanning electron microscopy indicated that the addition of SiO(2) in the HA precursor resulted in the presence of reduced cracking across the cross-section of the bioceramic coating.

Sacroiliac joint motion in patients with degenerative lumbar spine disorders.

PubMed

Nagamoto, Yukitaka; Iwasaki, Motoki; Sakaura, Hironobu; Sugiura, Tsuyoshi; Fujimori, Takahito; Matsuo, Yohei; Kashii, Masafumi; Murase, Tsuyoshi; Yoshikawa, Hideki; Sugamoto, Kazuomi

2015-08-01

OBJECT Usually additional anchors into the ilium are necessary in long fusion to the sacrum for degenerative lumbar spine disorders (DLSDs), especially for adult spine deformity. Although the use of anchors is becoming quite common, surgeons must always keep in mind that the sacroiliac (SI) joint is mobile and they should be aware of the kinematic properties of the SI joint in patients with DLSDs, including adult spinal deformity. No previous study has clarified in vivo kinematic changes in the SI joint with respect to patient age, sex, or parturition status or the presence of DLSDs. The authors conducted a study to clarify the mobility and kinematic characteristics of the SI joint in patients with DLSDs in comparison with healthy volunteers by using in vivo 3D motion analysis with voxel-based registration, a highly accurate, noninvasive method. METHODS Thirteen healthy volunteers (the control group) and 20 patients with DLSDs (the DLSD group) underwent low-dose 3D CT of the lumbar spine and pelvis in 3 positions (neutral, maximal trunk flexion, and maximal trunk extension). SI joint motion was calculated by computer processing of the CT images (voxel-based registration). 3D motion of the SI joint was expressed as both 6 df by Euler angles and translations on the coordinate system and a helical axis of rotation. The correlation between joint motion and the cross-sectional area of the trunk muscles was also investigated. RESULTS SI joint motion during trunk flexion-extension was minute in healthy volunteers. The mean rotation angles during trunk flexion were 0.07° around the x axis, -0.02° around the y axis, and 0.16° around the z axis. The mean rotation angles during trunk extension were 0.38° around the x axis, -0.08° around the y axis, and 0.08° around the z axis. During trunk flexion-extension, the largest amount of motion occurred around the x axis. In patients with DLSDs, the mean rotation angles during trunk flexion were 0.57° around the x axis, 0.01° around the y axis, and 0.19° around the z axis. The mean rotation angles during trunk extension were 0.68° around the x axis, -0.11° around the y axis, and 0.05° around the z axis. Joint motion in patients with DLSDs was significantly greater, with greater individual difference, than in healthy volunteers. Among patients with DLSDs, women had significantly more motion than men did during trunk extension. SI joint motion was significantly negatively correlated with the cross-sectional area of the trunk muscles during both flexion and extension of the trunk. CONCLUSIONS The authors elucidated the mobility and kinematic characteristics of the SI joint in patients with DLSDs compared with healthy volunteers for the first time. This information is useful for spine surgeons because of the recent increase in spinopelvic fusion for the treatment of DLSDs.

Hybrid composite membranes of chitosan/sulfonated polyaniline/silica as polymer electrolyte membrane for fuel cells.

PubMed

Vijayakumar, Vijayalekshmi; Khastgir, Dipak

2018-01-01

A series of novel ionic cross-linked chitosan (CS) based hybrid nanocomposites were prepared by using polyaniline/nano silica (PAni/SiO 2 ) as inorganic filler and sulfuric acid as an ionic cross-linking agent. The CS-PAni/SiO 2 nanocomposites show enhanced mechanical properties and improved oxidative stabilities. These nanocomposites can be effectively used as environmental friendly proton exchange membranes. Incorporation of PAni/SiO 2 into CS matrix enhances water uptake and facilitates the phase separation which enables the formation of hydrophilic domains and improves the proton transport. Moreover, the doped polyaniline also provides some additional pathways for proton conduction. The membrane containing 3wt% loading of PAni/SiO 2 in chitosan (CS-PAni/SiO 2 -3) exhibits high proton conductivity at 80°C (8.39×10 -3 Scm -1 ) in fully hydrated state due to its excellent water retention properties. Moreover, methanol permeability of the ionic cross-linked CS-PAni/SiO 2 nanocomposite membranes significantly reduces with the addition of PAni/SiO 2 nano particles. The CS-PAni/SiO 2 -3 composite membrane displays the best overall performance as a polymer electrolyte membrane. Copyright © 2017 Elsevier Ltd. All rights reserved.

Oxidation of Carbon/Carbon through Coating Cracks

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Roth, d. J.; Rauser, R. W.; Cawley, J. D.; Curry, D. M.

2008-01-01

Reinforced carbon/carbon (RCC) is used to protect the wing leading edge and nose cap of the Space Shuttle Orbiter on re-entry. It is composed of a lay-up of carbon/carbon fabric protected by a SiC conversion coating. Due to the thermal expansion mismatch of the carbon/carbon and the SiC, the SiC cracks on cool-down from the processing temperature. The cracks act as pathways for oxidation of the carbon/carbon. A model for the diffusion controlled oxidation of carbon/carbon through machined slots and cracks is developed and compared to laboratory experiments. A symmetric cylindrical oxidation cavity develops under the slots, confirming diffusion control. Comparison of cross sectional dimensions as a function of oxidation time shows good agreement with the model. A second set of oxidation experiments was done with samples with only the natural craze cracks, using weight loss as an index of oxidation. The agreement of these rates with the model is quite reasonab

Zirconium oxide surface passivation of crystalline silicon

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Hettick, Mark; Xu, Zhaoran; Yan, Di; Peng, Jun; Javey, Ali; Cuevas, Andres

2018-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited zirconium oxide (ZrOx). The optimum layer thickness and activation annealing conditions are determined to be 20 nm and 300 °C for 20 min. Cross-sectional transmission electron microscopy imaging shows an approximately 1.6 nm thick SiOx interfacial layer underneath an 18 nm ZrOx layer, consistent with ellipsometry measurements (˜20 nm). Capacitance-voltage measurements show that the annealed ZrOx film features a low interface defect density of 1.0 × 1011 cm-2 eV-1 and a low negative film charge density of -6 × 1010 cm-2. Effective lifetimes of 673 μs and 1.1 ms are achieved on p-type and n-type 1 Ω cm undiffused c-Si wafers, respectively, corresponding to an implied open circuit voltage above 720 mV in both cases. The results demonstrate that surface passivation quality provided by ALD ZrOx is consistent with the requirements of high efficiency silicon solar cells.

Impact of emotional intelligence and spiritual intelligence on the caring behavior of nurses: a dimension-level exploratory study among public hospitals in Malaysia.

PubMed

Kaur, Devinder; Sambasivan, Murali; Kumar, Naresh

2015-11-01

The purpose of this research is to study the impact of individual factors such as emotional intelligence (EI) and spiritual intelligence (SI) on the caring behavior of nurses. A cross-sectional survey using questionnaire was conducted by sampling 550 nurses working in seven major public hospitals in Malaysia. Data were analyzed using structural equation modeling (SEM). The main findings are: (1) critical existential thinking and transcendental awareness dimensions of SI have significant impacts on assurance of human presence dimension of caring behavior; (2) personal meaning production and conscious state expansion dimensions of SI have significant impacts on perception of emotion and managing own emotions dimensions of EI; and (3) managing own emotions dimension of EI has significant impacts on respectful deference to other and assurance of human presence dimensions of caring behavior of nurses. The results can be used to recruit and educate nurses. Copyright © 2015 Elsevier Inc. All rights reserved.

Annealing temperature effect on self-assembled Au droplets on Si (111).

PubMed

Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

2013-12-13

We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

Enhancement of Ag nanoparticles concentration by prior ion implantation

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Wang, Jun; Liu, Changlong

2017-09-01

Thermally grown SiO2 layer on Si substrates were singly or sequentially implanted with Zn or Cu and Ag ions at the same fluence of 2 × 1016/cm2. The profiles of implanted species, structure, and spatial distribution of the formed nanoparticles (NPs) have been characterized by the cross-sectional transmission electron microscope (XTEM) and Rutherford backscattering spectrometry (RBS). It is found that pre-implantation of Zn or Cu ions could suppress the self sputtering of Ag atoms during post Ag ion implantation, which gives rise to fabrication of Ag NPs with a high density. Moreover, it has also been demonstrated that the suppressing effect strongly depends on the applied energy and mobility of pre-implanted ions. The possible mechanism for the enhanced Ag NPs concentration has been discussed in combination with SRIM simulations. Both vacancy-like defects acting as the increased nucleation sites for Ag NPs and a high diffusivity of prior implanted ions in SiO2 play key roles in enhancing the deposition of Ag implants.

Mechanical Behavior of a Hi-Nicalon(tm)/SiC Composite Having a Polycarbosilane Derived Matrix

NASA Technical Reports Server (NTRS)

Hurwitz, Frances I.; Calomino, Anthony M.; McCue, Terry R.

1999-01-01

Polymer infiltration of a rigidized preform, followed by pyrolysis to convert the polymer to a ceramic, potentially offers a lower cost alternative to CVD. It also offers more moderate temperature requirements than melt infiltration approaches, which should minimize potential fiber damage during processing. However, polymer infiltration and pyrolysis results in a more microcracked matrix. Preliminary mechanical property characterization, including elevated temperature (1204 C) tensile, 500 h stress rupture behavior and low cycle fatigue, was conducted on Hi-Nicalon (TM)/Si-C-(O) composites having a dual layer BN/SiC interface and a matrix derived by impregnation and pyrolysis of allylhydridopolycarbosilane (AHPCS). Microstructural evaluation of failure surfaces and of polished transverse and longitudinal cross sections of the failed specimens was used to identify predominant failure mechanisms. In stress rupture testing at 1093 C, the failure was interface dominated, while at 1204 C in both stress rupture and two hour hold/fatigue tests failure was matrix dominated, resulting in specimen delamination.

Laser Cladding of Composite Bioceramic Coatings on Titanium Alloy

NASA Astrophysics Data System (ADS)

Xu, Xiang; Han, Jiege; Wang, Chunming; Huang, Anguo

2016-02-01

In this study, silicon nitride (Si3N4) and calcium phosphate tribasic (TCP) composite bioceramic coatings were fabricated on a Ti6Al4V (TC4) alloy using Nd:YAG pulsed laser, CO2 CW laser, and Semiconductor CW laser. The surface morphology, cross-sectional microstructure, mechanical properties, and biological behavior were carefully investigated. These investigations were conducted employing scanning electron microscope, energy-dispersive x-ray spectroscopy, and other methodologies. The results showed that both Si3N4 and Si3N4/TCP composite coatings were able to form a compact bonding interface between the coating and the substrate by using appropriate laser parameters. The coating layers were dense, demonstrating a good surface appearance. The bioceramic coatings produced by laser cladding have good mechanical properties. Compared with that of the bulk material, microhardness of composite ceramic coatings on the surface significantly increased. In addition, good biological activity could be obtained by adding TCP into the composite coating.

A versatile technique for fabrication of SiC SPM probes

NASA Astrophysics Data System (ADS)

Therrien, Joel; Schmidt, Daniel; Barrot, Sheetal; Patel, Bhavin

2008-03-01

To date SPM probes have largely been fabricated via methods borrowed from the semiconductor industry for fabricating Micro Electro Mechanical Systems. Although these techniques have enabled SPM to see widespread use, the processes put significant limitations on what structures can be made. We report our progress on fabricating SPM cantilevers composed of Silicon Carbide using polymer molding techniques. A pre-ceramic polymer is molded into the desired probe shape and then converted to SiC via pyrolisys. We will also report on progress in using photo-sterolithography for fabrication of even more complex geometries. In addition to opening up a much larger set of probe structures, the use of SiC leads to improved wear resistance of the resulting probes. Among the potential applications, this method enables the fabrication of low spring constant, high resonant frequency cantilevers via cross sectional geometries not accessible to standard fabrication techniques. Such probes are required for high speed tapping and non-contact imaging.

Indentation fracture assessment of residual stress in Si{sub 3}N{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, K.H.; Liu, K.C.; Sentella, M.

1996-12-31

The measurement of residual stress in Si{sub 3}N{sub 4} ceramics was examined using the indentation technique while a bar specimen with a square cross-section was loaded in tension, and an indentation was created by means of a Vicker`s indenter. The stress applied to the specimen ranged from 0 to 98.8 MPa. The crack length and the shape of the crack were measured by both optical and scanning electron microscopes. Results of the tests indicate that the indentation fracture method can be used to accurately determine the residual stress existing in the material as well as to predict the K{sub c}more » value of the material. The indentation load must be higher than a critical value in order to develop a well-defined penny-shaped crack. For the Si{sub 3}N{sub 4} this critical load is approximately 3 kg. A geometric constant is an important factor for the calculation of the residual stress.« less

Are Nonadiabatic Reaction Dynamics the Key to Novel Organosilicon Molecules? The Silicon (Si(3P))-Dimethylacetylene (C4H6(X1A1g)) System as a Case Study.

PubMed

Thomas, Aaron M; Dangi, Beni B; Yang, Tao; Kaiser, Ralf I; Lin, Lin; Chou, Tzu-Jung; Chang, Agnes H H

2018-06-06

The bimolecular gas phase reaction of ground-state silicon (Si; 3 P) with dimethylacetylene (C 4 H 6 ; X 1 A 1g ) was investigated under single collision conditions in a crossed molecular beams machine. Merged with electronic structure calculations, the data propose nonadiabatic reaction dynamics leading to the formation of singlet SiC 4 H 4 isomer(s) and molecular hydrogen (H 2 ) via indirect scattering dynamics along with intersystem crossing (ISC) from the triplet to the singlet surface. The reaction may lead to distinct energetically accessible singlet SiC 4 H 4 isomers ( 1 p8- 1 p24) in overall exoergic reaction(s) (-107 -20 +12 kJ mol -1 ). All feasible reaction products are either cyclic, carry carbene analogous silylene moieties, or carry C-Si-H or C-Si-C bonds that would require extensive isomerization from the initial collision complex(es) to the fragmenting singlet intermediate(s). The present study demonstrates the first successful crossed beams study of an exoergic reaction channel arising from bimolecular collisions of silicon, Si( 3 P), with a hydrocarbon molecule.

Biscarbamate Cross-Linked Low-Molecular-Weight Polyethylenimine for Delivering Anti-chordin siRNA into Human Mesenchymal Stem Cells for Improving Bone Regeneration.

PubMed

Wang, Chuandong; Yuan, Weien; Xiao, Fei; Gan, Yaokai; Zhao, Xiaotian; Zhai, Zhanjing; Zhao, Xiaoying; Zhao, Chen; Cui, Penglei; Jin, Tuo; Chen, Xiaodong; Zhang, Xiaoling

2017-01-01

Small-interfering RNA (siRNA) provides a rapid solution for drug design and provides new methods to develop customizable medicines. Polyethyleneimine 25 kDa (PEI25kDa) is an effective transfection agent used in siRNA delivery. However, the lack of degradable linkage causes undesirable toxicity, hindering its clinical application. We designed a low-molecular-weight cross-linked polyethylenimine named PEI-Et (Mn:1220, Mw:2895) by using degradable ethylene biscarbamate linkage with lower cytotoxicity and higher knockdown efficiency than PEI25kDa in delivery Chordin siRNA to human bone mesenchymal stem cells (hBMSCs). Suppression of Chordin by using anti-Chordin siRNA delivered by PEI-Et improved bone regeneration in vitro and in vivo associated with the bone morphogenetic protein-2 (BMP-2) mediated smad1/5/8 signaling pathway. Results of this study suggest that Chordin siRNA can be potentially used to improve osteogenesis associated with the BMP-2-mediated Smad1/5/8 signaling pathway and biodegradable biscarbamate cross-linked low-molecular-weight polyethylenimine (PEI-Et) is a therapeutically feasible carrier material to deliver anti-Chordin siRNA to hBMSCs.

Milestone report on MD potential development for uranium silicide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Jianguo; Zhang, Yongfeng; Hales, Jason Dean

2016-03-01

This report summarizes the progress on the interatomic potential development of triuranium-disilicide (U 3Si 2) for molecular dynamics (MD) simulations. The development is based on the Tersoff type potentials for single element U and Si. The Si potential is taken from the literature and a Tersoff type U potential is developed in this project. With the primary focus on the U 3Si 2 phase, some other U-Si systems such as U 3Si are also included as a test of the transferability of the potentials for binary U-Si phases. Based on the potentials for unary U and Si, two sets ofmore » parameters for the binary U-Si system are developed using the Tersoff mixing rules and the cross-term fitting, respectively. The cross-term potential is found to give better results on the enthalpy of formation, lattice constants and elastic constants than those produced by the Tersoff mixing potential, with the reference data taken from either experiments or density functional theory (DFT) calculations. In particular, the results on the formation enthalpy and lattice constants for the U 3Si 2 phase and lattice constants for the high temperature U 3Si (h-U 3Si) phase generated by the cross-term potential agree well with experimental data. Reasonable agreements are also reached on the elastic constants of U 3Si 2, on the formation enthalpy for the low temperature U 3Si (m-U 3Si) and h-U 3Si phases, and on the lattice constants of m-U 3Si phase. All these phases are predicted to be mechanically stable. The unary U potential is tested for three metallic U phases (α, β, γ). The potential is found capable to predict the cohesive energies well against experimental data for all three phases. It matches reasonably with previous experiments on the lattice constants and elastic constants of αU.« less

New insights into micro/nanoscale combined probes (nanoAuger, μXPS) to characterize Ag/Au@SiO2 core-shell assemblies.

PubMed

Ledeuil, J B; Uhart, A; Soulé, S; Allouche, J; Dupin, J C; Martinez, H

2014-10-07

This work has examined the elemental distribution and local morphology at the nanoscale of core@shell Ag/Au@SiO2 particles. The characterization of such complex metal/insulator materials becomes more efficient when using an initial cross-section method of preparation of the core@shell nanoparticles (ion milling cross polisher). The originality of this route of preparation allows one to obtain undamaged, well-defined and planar layers of cross-cut nano-objects. Once combined with high-resolution techniques of characterization (XPS, Auger and SEM), the process appears as a powerful way to minimize charging effects and enhance the outcoming electron signal (potentially affected by the topography of the material) during analysis. SEM experiments have unambiguously revealed the hollow-morphology of the metal core, while Auger spectroscopy observations showed chemical heterogeneity within the particles (as silver and gold are randomly found in the core ring). To our knowledge, this is the first time that Auger nano probe spectroscopy has been used and successfully optimized for the study of some complex metal/inorganic interfaces at such a high degree of resolution (≈12 nm). Complementarily, XPS Au 4f and Ag 3d peaks were finally detected attesting the possibility of access to the whole chemistry of such nanostructured assemblies.

Gender-specific factors associated with the suicidal ideation of children in Taiwan: A large-scale cross-sectional study.

PubMed

Huang, Hsiao-Ling; Peng, Wu-Der; Lin, Ying-Chun; Lee, Chien-Hung; Hu, Chih-Yang; Huang, Shun-Te

2017-07-06

We examined the relationship between suicidal ideation (SI) and the depressed mood, life stress and parenting styles in children. A large-scale survey was conducted including 5328 children from 65 elementary schools in Taiwan. SI was measured by asking children if any suicidal thoughts had occurred in the previous month. A series of regression models was analysed separately for male and female students. Compared with boys, girls demonstrated a higher proportion of SI. Among boys, SI was significantly associated with a high level of perceived environmental stress (adjusted odds ratio [aOR] = 2.61), a high degree of depressed mood (aOR = 2.39), authoritative (aOR = 1.72) and authoritarian (aOR = 2.53) parenting styles and two or more life-stress events (aOR = 1.45). A high level of perceived environmental stress (aOR = 2.09), a high degree of depressed mood (aOR = 2.89) and an authoritarian parenting style (aOR = 1.76) were significantly associated with the SI in girls. Gender-specific interventions aimed at preventing SI must enhance support systems at school and at home, particularly for students who suffer from a high degree of stress and depressed mood, and are subjected to an authoritarian parenting style. © 2017 International Union of Psychological Science.

Modeling the Tensile Behavior of Cross-Ply C/SiC Ceramic-Matrix Composites

NASA Astrophysics Data System (ADS)

Li, L. B.; Song, Y. D.; Sun, Y. C.

2015-07-01

The tensile behavior of cross-ply C/SiC ceramic-matrix composites (CMCs) at room temperature has been investigated. Under tensile loading, the damage evolution process was observed with an optical microscope. A micromechanical approach was developed to predict the tensile stress-strain curve, which considers the damage mechanisms of transverse multicracking, matrix multicracking, fiber/matrix interface debonding, and fiber fracture. The shear-lag model was used to describe the microstress field of the damaged composite. By combining the shear-lag model with different damage models, the tensile stress-strain curve of cross-ply CMCs corresponding to each damage stage was modeled. The predicted tensile stress-strain curves of cross-ply C/SiC composites agreed with experimental data.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Bullock, James; Cuevas, Andres

2015-05-18

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negativemore » fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.« less

The Synthesis of 44Ti and 56Ni in Massive Stars

NASA Astrophysics Data System (ADS)

Chieffi, Alessandro; Limongi, Marco

2017-02-01

We discuss the influence of rotation on the combined synthesis of {}44{Ti} and {}56{Ni} in massive stars. While {}56{Ni} is significantly produced by both complete and incomplete explosive Si burning, {}44{Ti} is mainly produced by complete explosive Si burning, with a minor contribution (in standard non-rotating models) from incomplete explosive Si burning and O burning (both explosive and hydrostatic). We find that, in most cases, the thickness of the region exposed to incomplete explosive Si burning increases in rotating models (initial velocity, v ini = 300 km s-1) and since {}56{Ni} is significantly produced in this zone, the fraction of mass coming from the complete explosive Si burning zone necessary to get the required amount of {}56{Ni} reduces. Therefore the amount of {}44{Ti} ejected for a given fixed amount of {}56{Ni} decreases in rotating models. However, some rotating models at [Fe/H] = -1 develop a very extended O convective shell in which a consistent amount of {}44{Ti} is formed, preserved, and ejected in the interstellar medium. Hence a better modeling of the thermal instabilities (convection) in the advanced burning phases together with a critical analysis of the cross sections of the nuclear reactions operating in O burning are relevant for the understanding of the synthesis of {}44{Ti}.

Testing the Interpersonal Theory of Suicide in Chronic Pain.

PubMed

Wilson, Keith G; Heenan, Adam; Kowal, John; Henderson, Peter R; McWilliams, Lachlan A; Castillo, Dyana

2017-08-01

The interpersonal theory of suicide offers a conceptual framework for understanding suicidal ideation (SI) that may be applicable to individuals with chronic pain. The theory emphasizes the importance of 2 interpersonal constructs as precursors to SI: perceived burdensomeness (the belief that one has become a burden to others) and thwarted belongingness (a lack of social integration or connection). Our objective was to test the interpersonal theory of suicide in people with chronic pain. Hierarchical regression analysis was used in a cross-sectional study of 282 patients of an interdisciplinary pain clinic. The Beck Scale for Suicide Ideation was the criterion measure of SI, and independent variables included both general and pain-specific predictors. After adjusting for other known or putative risk factors related to pain and mental health, perceived burdensomeness significantly predicted SI, whereas thwarted belongingness did not. As expected according to theory, the interaction between perceived burdensomeness and thwarted belongingness was also significant; perceived burdensomeness was a strong predictor of SI at high levels of thwarted belongingness, but only marginally at low levels. Other independent predictors were male sex, number of prior suicide attempts, and hopelessness. These findings are in line with some, but not all, of the major predictions of the interpersonal theory of suicide. In general, however, they support the relevance of the theory for individuals with chronic pain.

GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orzali, Tommaso, E-mail: tommaso.orzali@sematech.org; Vert, Alexey; O'Brien, Brendan

2015-09-14

The Aspect Ratio Trapping technique has been extensively evaluated for improving the quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at the sidewalls of SiO{sub 2} patterned trenches that enclose the growth region. However, defects propagating along the trench direction cannot be effectively confined with this technique. We studied the effect of the trench bottom geometry on the density of defects of GaAs fins, grown by metal-organic chemical vapor deposition on 300 mm Si (001) wafers inside narrow (<90 nm wide) trenches. Plan view and cross sectional Scanning Electron Microscopy and Transmission Electron Microscopy, togethermore » with High Resolution X-Ray Diffraction, were used to evaluate the crystal quality of GaAs. The prevalent defects that reach the top surface of GaAs fins are (111) twin planes propagating along the trench direction. The lowest density of twin planes, ∼8 × 10{sup 8 }cm{sup −2}, was achieved on “V” shaped bottom trenches, where GaAs nucleation occurs only on (111) Si planes, minimizing the interfacial energy and preventing the formation of antiphase boundaries.« less

Effect of concentration variation on 2.0 µm emission of Ho3+-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 oxyfluorosilicate glasses

NASA Astrophysics Data System (ADS)

Gelija, Devarajulu; Borelli, Deva Prasad Raju

2018-02-01

The concentration variation of Ho3+ ion-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho3+-doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ωλ ( λ = 2, 4 and 6) were calculated for all concentrations of Ho3+ ions. The luminescence spectra in visible region of Ho3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands (5F4, 5S2) → 5I8 (547 nm), 5F3 → 5I8 (647 nm), 5F5 → 5I7 (660 nm) and (5F4, 5S2) → 5I7 (750 nm) in the range 500-780 nm. The fluorescence emission at ˜2.0 µm (5I7 → 5I8) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5I7 → 5I8 transition (˜2.0 µm) varies from 8.46 to 9.52 × 10-21 cm2, as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 × 10-21 cm2 for the 5I7 → 5I8 transition in all concentrations of Ho3+-doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho3+-doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ˜ 2.0 µm.

Evolution of L -shell photoabsorption of the molecular-ion series Si Hn + (n =1 ,2 ,3 ): Experimental and theoretical studies

NASA Astrophysics Data System (ADS)

Kennedy, E. T.; Mosnier, J.-P.; van Kampen, P.; Bizau, J.-M.; Cubaynes, D.; Guilbaud, S.; Carniato, S.; Puglisi, A.; Sisourat, N.

2018-04-01

We report on complementary laboratory and theoretical investigations of the 2 p photoexcitation cross sections for the molecular-ion series Si Hn + (n =1 ,2 ,3 ) near the L -shell threshold. The experiments used an electron cyclotron resonance (ECR) plasma molecular-ion source coupled with monochromatized synchrotron radiation in a merged-beam configuration. For all three molecular ions, the S i2 + decay channel appeared dominant, suggesting similar electronic and nuclear relaxation patterns involving resonant Auger and dissociation processes, respectively. The total yields of the S i2 + products were recorded and put on absolute cross-section scales by comparison with the spectrum of the S i+ parent atomic ion. Interpretation of the experimental spectra ensued from a comparison with total photoabsorption cross-sectional profiles calculated using ab initio configuration interaction theoretical methods inclusive of vibrational dynamics and contributions from inner-shell excitations in both ground and valence-excited electronic states. The spectra, while broadly similar for all three molecular ions, moved towards lower energies as the number of screening hydrogen atoms increased from one to three. They featured a wide and shallow region below ˜107 eV due to 2 p →σ* transitions to dissociative states, and intense and broadened peaks in the ˜107 -113 -eV region merging into sharp Rydberg series due to 2 p →n δ ,n π transitions converging on the LII ,III limits above ˜113 eV . This overall spectral shape is broadly replicated by theory in each case, but the level of agreement does not extend to individual resonance structures. In addition to the fundamental interest, the work should also prove useful for the understanding and modeling of astronomical and laboratory plasma sources where silicon hydride molecular species play significant roles.

Anisotropic Swelling and Fracture of Silicon Nanowires during Lithiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiao Hua; Zheng, He; Zhong, Li

2011-08-10

We report direct observation of an unexpected anisotropic swelling of Si nanowires during lithiation against either a solid electrolyte with a lithium counter-electrode or a liquid electrolyte with a LiCoO2 counter-electrode. Such anisotropic expansion is attributed to the interfacial processes of accommodating large volumetric strains at the lithiation reaction front that depend sensitively on the crystallographic orientation. This anisotropic swelling results in lithiated Si nanowires with a remarkable dumbbell-shaped cross section, which develops due to plastic flow and an ensuing necking instability that is induced by the tensile hoop stress buildup in the lithiated shell. The plasticity-driven morphological instabilities oftenmore » lead to fracture in lithiated nanowires, now captured in video. These results provide important insight into the battery degradation mechanisms.« less

Nuclear-grade zirconium prepared by combining combustion synthesis with molten-salt electrorefining technique

NASA Astrophysics Data System (ADS)

Li, Hui; Nersisyan, Hayk H.; Park, Kyung-Tae; Park, Sung-Bin; Kim, Jeong-Guk; Lee, Jeong-Min; Lee, Jong-Hyeon

2011-06-01

Zirconium has a low absorption cross-section for neutrons, which makes it an ideal material for use in nuclear reactor applications. However, hafnium typically contained in zirconium causes it to be far less useful for nuclear reactor materials because of its high neutron-absorbing properties. In the present study, a novel effective method has been developed for the production of hafnium-free zirconium. The process includes two main stages: magnesio-thermic reduction of ZrSiO 4 under a combustion mode, to produce zirconium silicide (ZrSi), and recovery of hafnium-free zirconium by molten-salt electrorefining. It was found that, depending on the electrorefining procedure, it is possible to produce zirconium powder with a low hafnium content: 70 ppm, determined by ICP-AES analysis.

Fabrication and characterization of lead-free BaTiO3 thin film for storage device applications

NASA Astrophysics Data System (ADS)

Sharma, Hakikat; Negi, N. S.

2018-05-01

The lead-free BaTiO3 (BT) thin film solution has been prepared by sol-gel method. The prepared solution spin coated on Pt/TiO2/SiO2/ Si substrate. The fabricated thin film was analyzed by XRD and Raman spectrometer for structural conformation. Uniformity of thin film was examined by Atomic force microscope (AFM). Thickness of the film was measured by cross sectional FESEM. Activation energies for both positive and negative biasing have been calculated from temperature dependent leakage current density as a function of electric field. For ferroelectric memory devices such as FRAM the hysteresis loop plays important role. Electric filed dependent polarization of BT thin film measured at different switching voltages. With increasing voltage maximum polarization increases.

Long range mid-infrared propagation in Si and Ge hybrid plasmonic-photonic nano-ribbon waveguides.

PubMed

Liang, Haibo; Soref, Richard; Mu, Jianwei; Li, Xun; Huang, Wei-Ping

2014-11-17

We have investigated a hybrid plasmonic-photonic mode in Si and Ge channel waveguides over the 1.55-8.0 μm wavelength range. A 10-nm Cu ribbon was buried midway within a Si₃N₄ "photonic slot" centered in the semiconductor strip. For the TMo mode, propagation lengths L of several millimeters are predicted for a waveguide cross-section of about 0.7λ/n x 0.7λ/n which offers optical confinement mainly within the ~λ²/400-area slot. The L increased strongly with λ. For 0.4λ/n x 0.4λ/n channels, we found multi-centimeter propagation, but there ~60% of the propagating energy had leaked out into the thick, all-around Si₃N₄ cladding.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demkowicz, Paul Andrew; Harp, Jason M.; Winston, Philip L.

Destructive post-irradiation examination was performed on AGR-1 fuel Compact 4-1-1, which was irradiated to a final compact-average burnup of 19.4% FIMA (fissions per initial metal atom) and a time-average, volume-average temperature of 1072°C. The analysis of this compact focused on characterizing the extent of fission product release from the particles and examining particles to determine the condition of the kernels and coating layers. The work included deconsolidation of the compact and leach-burn-leach analysis, visual inspection and gamma counting of individual particles, metallurgical preparation of selected particles, and examination of particle cross-sections with optical microscopy, electron microscopy, and elemental analysis. Deconsolidation-leach-burn-leachmore » (DLBL) analysis revealed no particles with failed TRISO or failed SiC layers (as indicated by very low uranium inventory in all of the leach solutions). The total fractions of the predicted compact inventories of fission products Ce-144, Cs-134, Cs-137, and Sr-90 that were present in the compact outside of the SiC layers were <2×10 -6, based on DLBL data. The Ag-110m fraction in the compact outside the SiC layers was 3.3×10 -2, indicating appreciable release of silver through the intact coatings and subsequent retention in the OPyC layers or matrix. The Eu-154 fraction was 2.4×10 -4, which is equivalent to the inventory in one average particle, and indicates a small but measurable level of release from the intact coatings. Gamma counting of 61 individual particles indicated no particles with anomalously low fission product retention. The average ratio of measured inventory to calculated inventory was close to a value of 1.0 for several fission product isotopes (Ce-144, Cs-134, and Cs-137), indicating good retention and reasonably good agreement with the predicted inventories. Measured-to-calculated (M/C) activity ratios for fission products Eu-154, Eu-155, Ru-106, Sb-125, and Zr-95 were significantly less than 1.0. However, as no significant release of these fission products from compacts was noted during previous analysis of the AGR-1 capsule components, the low M/C ratios are most likely an indication of a bias in the inventories predicted by physics simulations of the AGR-1 experiment. The distribution of Ag-110m M/C ratios was centered on a value of 1.02 and was fairly broad (standard deviation of 0.18, with values as high as 1.42 and as low as 0.68). Based on all data gathered to date, it is believed that silver retention in the particles was on average relatively high, but that the broad distribution in values among the particles represents significant variation in the inventory of Ag-110m generated in the particles. Ceramographic analysis of particle cross-sections revealed many of the characteristic microstructures often observed in irradiated AGR-1 particles from other fuel compacts. Palladium-rich fission product clusters were observed in the IPyC and SiC layers near the IPyC-SiC interface of three Compact 4-1-1 particle cross-sections. In spite of the presence of fission product clusters in the SiC layer, no significant corrosion or degradation of the layer was observed in any of the particles examined.« less

Donor-Specific Indirect Pathway Analysis Reveals a B-Cell-Independent Signature Which Reflects Outcomes in Kidney Transplant Recipients

PubMed Central

Haynes, L. D.; Jankowska-Gan, E.; Sheka, A.; Keller, M. R.; Hernandez-Fuentes, M. P.; Lechler, R. I.; Seyfert-Margolis, V.; Turka, L. A.; Newell, K. A.; Burlingham, W. J.

2012-01-01

To investigate the role of donor-specific indirect pathway T cells in renal transplant tolerance, we analyzed responses in peripheral blood of 45 patients using the trans-vivo delayed-type hypersensitivity assay. Subjects were enrolled into five groups—identical twin, clinically tolerant (TOL), steroid monotherapy (MONO), standard immunosuppression (SI) and chronic rejection (CR)—based on transplant type, posttransplant immunosuppression and graft function. The indirect pathway was active in all groups except twins but distinct intergroup differences were evident, corresponding to clinical status. The antidonor indirect pathway T effector response increased across patient groups (TOL < MONO < SI < CR; p < 0.0001) whereas antidonor indirect pathway T regulatory response decreased (TOL > MONO = SI > CR; p < 0.005). This pattern differed from that seen in circulating naïve B-cell numbers and in a cross-platform biomarker analysis, where patients on monotherapy were not ranked closest to TOL patients, but rather were indistinguishable from chronically rejecting patients. Cross-sectional analysis of the indirect pathway revealed a spectrum in T-regulatory:T-effector balance, ranging from TOL patients having predominantly regulatory responses to CR patients having predominantly effector responses. Therefore, the indirect pathway measurements reflect a distinct aspect of tolerance from the recently reported elevation of circulating naïve B cells, which was apparent only in recipients off immunosuppression. PMID:22151236

Effects of ion irradiation on the surface mechanical behavior of hybrid sol-gel derived silicate thin films

NASA Astrophysics Data System (ADS)

Ghisleni, Rudy

A study on the effects of ion irradiation on the surface mechanical behavior of hybrid sol-gel derived thin films has been performed. Hybrid organic/inorganic modified silicate thin films were synthesized by sol-gel processing from tetraethoxysilane (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto (100) Si substrates. The synthesized films were investigated by nanoindentation, photoluminescence spectroscopy, and Raman spectroscopy. Hybrid TEOS/MTES sol-gel films modified by ion irradiation with deposited electronic energies of 1.87 x 1025 eV/cm3 or higher showed higher values of reduced elastic modulus and hardness than 800°C heat treated films. Thus, ion irradiation was found to be an effective means in converting the polymer sol into ceramic type coatings. The ions used in this study were Cu2+, N2+, Si+, O+, N+, He+, and H+, with incident energies ranging from 100 keV to 2 MeV, and fluences ranging from 1 x 1014 to 1 x 1017 ions/cm2. Both the reduced elastic modulus and hardness were seen to increase monotonically with the increase in ion fluence, with an observed maximum hardness of 7.7 GPa (an unirradiated film hardness was 0.4 GPa) and a maximum reduced elastic modulus of 84.0 GPa (an unirradiated film reduced elastic modulus was 7.1 GPa) for 250 keV N2+ irradiation with a 5 x 1016 ions/cm2 fluence. The electronic stopping power was found to be principally responsible for the film hardening, while the role of nuclear stopping power was minimal. A monotonic increase in hardness with increase in electronic energy deposited to the film surface was found. A model describing the hardening of ion irradiated films was developed. This model characterizes the hardening effectiveness of the ion species considered by two parameters: the constant hardening cross-section and the hardening coefficient. Where the hardening cross-section represents the cross-sectional area hardened by the interaction of an incident ion with the target, and the hardening coefficient represents an index of the cross-sectional area gradient as a function of fluence. The increase in hardness of hybrid sol-gel films following ion irradiation was linked to structural changes. Ion irradiation results in a cross-linked silica film as well as the segregation of amorphous carbon clusters, both of which contributed to increase the mechanical properties of the films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, J.; Richard, P.; Gray, T.J.

The systematics of single and double K-shell-vacancy production in titanium has been investigated in the limit of zero target thickness (approx.1 ..mu..g/cm/sup 2/) for incident C, N, O, F, Mg, Al, Si, S, and Cl ions over a maximum energy range of 0.5 to 6.5 MeV/amu. This corresponds to collision systems with 0.27< or =Z/sub 1//Z/sub 2/< or =0.77 and 0.24< or =v/sub 1//vK< or =0.85, where v/sub 1/ is the projectile nuclear velocity and vK is the mean velocity of an electron in the target K shell. The present work is divided into four major sections. (1) Single K-shell-vacancymore » production has been investigated by measuring K..cap alpha.. and K..beta.. p satellite x-ray-production cross sections for projectiles incident with no K-shell vacancies. For incident ions with Z/sub 1/> or =9, the contribution due to electron-transfer processes from the target K shell to outer shells of the projectile has also been noted. (2) Single K-shell--to--K-shell electron-transfer cross sections have been obtained indirectly by the measuring of the enhancement in the Ti K x-ray production cross section for bare incident projectiles over ions incident with no initial K-shell vacancies. (3) Double K-vacancy production has been investigated by measuring the K..cap alpha.. hypersatellite intensity in ratio to the total K..cap alpha.. intensity. (4) Double K-shell--to--K-shell electron-transfer cross sections have been obtained indirectly with the use of a procedure similar to that used for single K to K transfer. The measured cross sections have been compared to theoretical models for direct Coulomb ionization and inner-shell electron transfer and have been used to investigate the relative importance of these mechanisms for K-vacancy production in heavy-ion--atom collisions.« less

Macrosegregation Resulting from Directional Solidification Through an Abrupt Change in Cross-Sections

NASA Technical Reports Server (NTRS)

Lauer, M.; Poirier, D. R.; Ghods, M.; Tewari, S. N.; Grugel, R. N.

2017-01-01

Simulations of the directional solidification of two hypoeutectic alloys (Al-7Si alloy and Al-19Cu) and resulting macrosegregation patterns are presented. The casting geometries include abrupt changes in cross-section from a larger width of 9.5 mm to a narrower 3.2 mm width then through an expansion back to a width of 9.5 mm. The alloys were chosen as model alloys because they have similar solidification shrinkages, but the effect of Cu on changing the density of the liquid alloy is about an order of magnitude greater than that of Si. The simulations compare well with experimental castings that were directionally solidified in a graphite mold in a Bridgman furnace. In addition to the simulations of the directional solidification in graphite molds, some simulations were effected for solidification in an alumina mold. This study showed that the mold must be included in numerical simulations of directional solidification because of its effect on the temperature field and solidification. For the model alloys used for the study, the simulations clearly show the interaction of the convection field with the solidifying alloys to produce a macrosegregation pattern known as "steepling" in sections with a uniform width. Details of the complex convection- and segregation-patterns at both the contraction and expansion of the cross-sectional area are revealed by the computer simulations. The convection and solidification through the expansions suggest a possible mechanism for the formation of stray grains. The computer simulations and the experimental castings have been part of on-going ground-based research with the goal of providing necessary background for eventual experiments aboard the ISS. For casting practitioners, the results of the simulations demonstrate that computer simulations should be applied to reveal interactions between alloy solidification properties, solidification conditions, and mold geometries on macrosegregation. The simulations also presents the possibility of engineering the mold-material to avoid, or mitigate, the effects of thermosolutal convection and macrosegregation by selecting a mold material with suitable thermal properties, especially its thermal conductivity.

Channel Shoaling with Deepening of Houma Navigation Channel at Cat Island Pass, Louisiana

DTIC Science & Technology

2011-01-01

is, Ac (m2)=6.992x10-4P0.86 (m3) (2) The minimum cross-sectional area for Cat Island Pass has increased through time, approximately 32,100...Journal of Coastal Research SI 59 256-265 West Palm Beach, Florida 2011 Channel Shoaling with Deepening of Houma Navigation Channel at Cat ...Deepening of Houma Navigation Channel at Cat Island Pass, Louisiana. In: Roberts, T.M., Rosati, J.D., and Wang, P. (eds.), Proceedings, Symposium to Honor

Radiation Effects on the Electrical Properties of MOS Device Materials.

DTIC Science & Technology

1978-02-01

3 Under Contract e ~i8 DAAG39~~ C.0O88 tJTtj~ J b This work _ sponsored by di. Ds~nse Nuclear Aisocy undur Nuclear ~ ffiupons Effucta flussarch...numb •r) Si02, MOS , CMOS Vacuum Ultraviolet Radiation Radiation Hardness Interfac e States Capture Cross Sections 2 ’ ~~’*~~ TRACT (Continu e on...When 0 t e Entered ) Results show that unannealed dry oxides have the lowest interface— state density after irrad iation, making them more desirable

Dark matter candidates and methods for detecting them

NASA Technical Reports Server (NTRS)

Raffelt, G. G.

1992-01-01

A number of experiments employing Ge and Si ionization detectors have excluded large regions in the plane of masses and scattering cross-sections for weakly-interacting dark matter (DM) candidates. It is judged that, before a realistic detection experiment for supersymmetric DM candidates can be conducted, significant development efforts will have to be completed for suitable cryogenic or ionization detectors. Pilot experiments have demonstrated the feasibility of axion searches with microwave cavities, but these are at least two orders of magnitude too low in sensitivity.

Materials-Process Interactions in Ternary Alloy Semiconductors.

DTIC Science & Technology

1984-08-01

high, the surface potential can be * modulated . PECVD SiO. appears to be a viable candidate as a gate dielectric for * Irf ,fO-4A)s MISFETs...it is desirable to integrate the detectors with circuits capable of performing signal processing functions. These circuits can either be fabricated in...to be a major problem in In0. 5 3Ga 0.* 47 s. 25 S. . . . . 13821 -1 R I (a) CROSS SECTION KEYBOARD 210M ANNEALING CHAMBER GATE TRIGG TRIAC

Nanoscale Phase-Separated Structure in Core-Shell Nanoparticles of SiO2-Si1-xGexO2 Glass Revealed by Electron Microscopy.

PubMed

Kubo, Yugo; Yonezawa, Kazuhiro

2017-09-05

SiO 2 -based optical fibers are indispensable components of modern information communication technologies. It has recently become increasingly important to establish a technique for visualizing the nanoscale phase-separated structure inside SiO 2 -GeO 2 glass nanoparticles during the manufacturing of SiO 2 -GeO 2 fibers. This is because the rapidly increasing price of Ge has made it necessary to improve the Ge yield by clarifying the detailed mechanism of Ge diffusion into SiO 2 . However, direct observation of the internal nanostructure of glass particles has been extremely difficult, mainly due to electrostatic charging and the damage induced by electron and X-ray irradiation. In the present study, we used state-of-the-art scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and energy dispersive X-ray spectroscopy (EDX) to examine cross-sectional samples of SiO 2 -GeO 2 particles embedded in an epoxy resin, which were fabricated using a broad Ar ion beam and a focused Ga ion beam. These advanced techniques enabled us to observe the internal phase-separated structure of the nanoparticles. We have for the first time clearly determined the SiO 2 -Si 1-x Ge x O 2 core-shell structure of such particles, the element distribution, the degree of crystallinity, and the quantitative chemical composition of microscopic regions, and we discuss the formation mechanism for the observed structure. The proposed imaging protocol is highly promising for studying the internal structure of various core-shell nanoparticles, which affects their catalytic, optical, and electronic properties.

On the possibility to detect multipolar order in URu 2 Si 2 by the electric quadrupolar transition of resonant elastic x-ray scattering

DOE PAGES

Wang, Y. L.; Fabbris, G.; Meyers, D.; ...

2017-08-30

Resonant elastic x-ray scattering is a powerful technique for measuring multipolar order parameters. In this paper, we theoretically and experimentally study the possibility of using this technique to detect the proposed multipolar order parameters in URu 2 Si 2 at the U- L 3 edge with the electric quadrupolar transition. Based on an atomic model, we calculate the azimuthal dependence of the quadrupolar transition at the U- L 3 edge. Our results illustrate the potential of this technique for distinguishing different multipolar order parameters. We then perform experiments on ultraclean single crystals of URu 2 Si 2 at the U-more » L 3 edge to search for the predicted signal, but do not detect any indications of multipolar moments within the experimental uncertainty. We also theoretically estimate the orders of magnitude of the cross section and the expected count rate of the quadrupolar transition and compare them to the dipolar transitions at the U- M 4 and U- L 3 edges, clarifying the difficulty in detecting higher order multipolar order parameters in URu 2 Si 2 in the current experimental setup.« less

Perceived racism, discrimination, and acculturation in suicidal ideation and suicide attempts among black young adults.

PubMed

Castle, Kathryn; Conner, Kenneth; Kaukeinen, Kimberly; Tu, Xin

2011-06-01

During young adulthood the suicide rate among Blacks rises dramatically and approaches that of the U.S. general population, requiring that prevention efforts include a focus on Black young adults. Although most research on suicidality among Blacks has focused on risk factors observed in the dominant culture, in this study the authors examined associations between perceived discrimination, racism, and acculturation with lifetime suicidal ideation (SI) and suicide attempt (SA) among Black young adults. Two hundred fifty Black or African American individuals aged 18-24 residing in a midsize northeastern city were recruited to participate through advertisements. Participants filled out self-report questionnaires. Logistic regressions were used to examine the association of each predictor with SI and SA. Greater perceived acculturation was associated with SI in univariate and multivariate models. There were no other statistically significant results concerning the predictors of interest. The link between perceived acculturation and SI is consistent with limited available data, indicating the need for further study including the potential mechanism(s) for the association. Limitations include the cross-sectional design and reliance on subjective measures. © 2011 The American Association of Suicidology.

Atomic-scale characterization of hydrogenated amorphous-silicon films and devices. Annual subcontract report, 14 February 1994--14 April 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallagher, A.; Tanenbaum, D.; Laracuente, A.

1995-08-01

Properties of the hydrogenated amorphous silicon (a-Si:H) films used in photovoltaic (PV) panels are reported. The atomic-scale topology of the surface of intrinsic a-Si:H films, measured by scanning tunneling microscopy (STM) as a function of film thickness, are reported and diagnosed. For 1-500-nm-thick films deposited under normal device-quality conditions from silane discharges, most portions of these surfaces are uniformly hilly without indications of void regions. However, the STM images indicate that 2-6-nm silicon particulates are continuously deposited into the growing film from the discharge and fill approximately 0.01% of the film volume. Although the STM data are not sensitive tomore » the local electronic properties near these particulates, it is very likely that the void regions grow around them and have a deleterious effect on a-Si:H photovoltaics. Preliminary observations of particulates in the discharge, based on light scattering, confirm that particulates are present in the discharge and that many collect and agglomerate immediately downstream of the electrodes. Progress toward STM measurements of the electronic properties of cross-sectioned a-Si:H PV cells is also reported.« less

Non-strinking siloxane polymers

DOEpatents

Loy, Douglas A.; Rahimian, Kamyar

2001-01-01

Cross-linked polymers formed by ring-opening polymerization of a precursor monomer of the general formula R[CH.sub.2 CH(Si(CH.sub.3).sub.2).sub.2 O].sub.2, where R is a phenyl group or an alkyl group having at least two carbon atoms. A cross-linked polymer is synthesized by mixing the monomer with a co-monomer of the general formula CH.sub.2 CHR.sup.2 (SiMe.sub.2).sub.2 O in the presence of an anionic base to form a cross-linked polymer of recurring units of the general formula R(Me.sub.2 SiOCH.sub.2 CHSiMe.sub.2).sub.2 [CH.sub.2 CHR.sup.2 (SiMe.sub.2).sub.2 O].sub.n, where R.sup.2 is hydrogen, phenyl, ethyl, propyl or butyl. If the precursor monomer is a liquid, the polymer can be directly synthesized in the presence of an anionic base to a cross-linked polymer containing recurring units of the general formula R(Me.sub.2 SiOCH.sub.2 CHSiMe.sub.2).sub.2. The polymers have approximately less than 1% porosity and are thermally stable at temperatures up to approximately 500.degree. C. The conversion to the cross-linked polymer occurs by ring opening polymerization and results in shrinkage of less than approximately 5% by volume.

New insights into micro/nanoscale combined probes (nanoAuger, μXPS) to characterize Ag/Au@SiO2 core-shell assemblies

NASA Astrophysics Data System (ADS)

Ledeuil, J. B.; Uhart, A.; Soulé, S.; Allouche, J.; Dupin, J. C.; Martinez, H.

2014-09-01

This work has examined the elemental distribution and local morphology at the nanoscale of core@shell Ag/Au@SiO2 particles. The characterization of such complex metal/insulator materials becomes more efficient when using an initial cross-section method of preparation of the core@shell nanoparticles (ion milling cross polisher). The originality of this route of preparation allows one to obtain undamaged, well-defined and planar layers of cross-cut nano-objects. Once combined with high-resolution techniques of characterization (XPS, Auger and SEM), the process appears as a powerful way to minimize charging effects and enhance the outcoming electron signal (potentially affected by the topography of the material) during analysis. SEM experiments have unambiguously revealed the hollow-morphology of the metal core, while Auger spectroscopy observations showed chemical heterogeneity within the particles (as silver and gold are randomly found in the core ring). To our knowledge, this is the first time that Auger nano probe spectroscopy has been used and successfully optimized for the study of some complex metal/inorganic interfaces at such a high degree of resolution (~12 nm). Complementarily, XPS Au 4f and Ag 3d peaks were finally detected attesting the possibility of access to the whole chemistry of such nanostructured assemblies.This work has examined the elemental distribution and local morphology at the nanoscale of core@shell Ag/Au@SiO2 particles. The characterization of such complex metal/insulator materials becomes more efficient when using an initial cross-section method of preparation of the core@shell nanoparticles (ion milling cross polisher). The originality of this route of preparation allows one to obtain undamaged, well-defined and planar layers of cross-cut nano-objects. Once combined with high-resolution techniques of characterization (XPS, Auger and SEM), the process appears as a powerful way to minimize charging effects and enhance the outcoming electron signal (potentially affected by the topography of the material) during analysis. SEM experiments have unambiguously revealed the hollow-morphology of the metal core, while Auger spectroscopy observations showed chemical heterogeneity within the particles (as silver and gold are randomly found in the core ring). To our knowledge, this is the first time that Auger nano probe spectroscopy has been used and successfully optimized for the study of some complex metal/inorganic interfaces at such a high degree of resolution (~12 nm). Complementarily, XPS Au 4f and Ag 3d peaks were finally detected attesting the possibility of access to the whole chemistry of such nanostructured assemblies. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr03211j

Calibration of the JET neutron activation system for DT operation

NASA Astrophysics Data System (ADS)

Bertalot, L.; Roquemore, A. L.; Loughlin, M.; Esposito, B.

1999-01-01

The neutron activation system at JET is a pneumatic transfer system capable of positioning activation samples close to the plasma. Its primary purpose is to provide a calibration for the time-dependent neutron yield monitors (fission chambers and solid state detectors). Various activation reactions with different high energy thresholds were used including 56Fe(n,p) 56Mn, 27Al(n,α) 24Na, 93Nb(n,2n) 92mNb, and 28Si(n,p) 28Al reactions. The silicon reaction, with its short half life (2.25 min), provides a prompt determination of the 14 MeV DT yield. The neutron induced γ-ray activity of the Si samples was measured using three sodium iodide scintillators, while two high purity germanium detectors were used for other foils. It was necessary to use a range of sample masses and different counting geometries in order to cover the wide range of neutron yields (1015-1019 neutrons) while avoiding excessive count rates in the detectors. The absolute full energy peak efficiency calibration of the detectors was measured taking into account the source-detector geometry, the self-attenuation of the samples and cross-talk effects. An error analysis of the neutron yield measurement was performed including uncertainties in efficiency calibration, neutron transport calculations, cross sections, and counting statistics. Cross calibrations between the different irradiation ends were carried out in DD and DT (with 1% and 10% tritium content) discharges. The effect of the plasma vertical displacement was also experimentally studied. An agreement within 10% was found between the 14 MeV neutron yields measured from Si, Fe, Al, Nb samples in DT discharges.

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

NASA Astrophysics Data System (ADS)

Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

2018-05-01

Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

Cross-linked Composite Gel Polymer Electrolyte using Mesoporous Methacrylate-Functionalized SiO2 Nanoparticles for Lithium-Ion Polymer Batteries

PubMed Central

Shin, Won-Kyung; Cho, Jinhyun; Kannan, Aravindaraj G.; Lee, Yoon-Sung; Kim, Dong-Won

2016-01-01

Liquid electrolytes composed of lithium salt in a mixture of organic solvents have been widely used for lithium-ion batteries. However, the high flammability of the organic solvents can lead to thermal runaway and explosions if the system is accidentally subjected to a short circuit or experiences local overheating. In this work, a cross-linked composite gel polymer electrolyte was prepared and applied to lithium-ion polymer cells as a safer and more reliable electrolyte. Mesoporous SiO2 nanoparticles containing reactive methacrylate groups as cross-linking sites were synthesized and dispersed into the fibrous polyacrylonitrile membrane. They directly reacted with gel electrolyte precursors containing tri(ethylene glycol) diacrylate, resulting in the formation of a cross-linked composite gel polymer electrolyte with high ionic conductivity and favorable interfacial characteristics. The mesoporous SiO2 particles also served as HF scavengers to reduce the HF content in the electrolyte at high temperature. As a result, the cycling performance of the lithium-ion polymer cells with cross-linked composite gel polymer electrolytes employing methacrylate-functionalized mesoporous SiO2 nanoparticles was remarkably improved at elevated temperatures. PMID:27189842

Mechanistic Significance of the Si–O–Pd Bond in the Palladium-Catalyzed Cross-Coupling Reactions of Arylsilanolates

PubMed Central

2016-01-01

Through the combination of reaction kinetics (both stoichiometric and catalytic), solution- and solid-state characterization of arylpalladium(II) arylsilanolates, and computational analysis, the intermediacy of covalent adducts containing Si–O–Pd linkages in the cross-coupling reactions of arylsilanolates has been unambiguously established. Two mechanistically distinct pathways have been demonstrated: (1) transmetalation via a neutral 8-Si-4 intermediate that dominates in the absence of free silanolate (i.e., stoichiometric reactions of arylpalladium(II) arylsilanolate complexes), and (2) transmetalation via an anionic 10-Si-5 intermediate that dominates in the cross-coupling under catalytic conditions (i.e., in the presence of free silanolate). Arylpalladium(II) arylsilanolate complexes bearing various phosphine ligands have been isolated, fully characterized, and evaluated for their kinetic competence under thermal (stoichiometric) and anionic (catalytic) conditions. Comparison of the rates for thermal and anionic activation suggested, but did not prove, that intermediates containing the Si–O–Pd linkage were involved in the cross-coupling process. The isolation of a coordinatively unsaturated, T-shaped arylpalladium(II) arylsilanolate complex ligated with t-Bu3P allowed the unambiguous demonstration of the operation of both pathways involving 8-Si-4 and 10-Si-5 intermediates. Three kinetic regimes were identified: (1) with 0.5–1.0 equiv of added silanolate (with respect to arylpalladium bromide), thermal transmetalation via a neutral 8-Si-4 intermediate; (2) with 1.0–5.0 equiv of added silanolate, activated transmetalation via an anionic 10-Si-5 intermediate; and (3) with >5.0 equiv of added silanolate, concentration-independent (saturation) activated transmetalation via an anionic 10-Si-5 intermediate. Transition states for the intramolecular transmetalation of neutral (8-Si-4) and anionic (10-Si-5) intermediates have been located computationally, and the anionic pathway is favored by 1.8 kcal/mol. The energies of all intermediates and transition states are highly dependent on the configuration around the palladium atom. PMID:25945516

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

NASA Technical Reports Server (NTRS)

Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

2012-01-01

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Opacity Measurement and Theoretical Investigation of Hot Silicon Plasma

NASA Astrophysics Data System (ADS)

Xiong, Gang; Yang, Jiamin; Zhang, Jiyan; Hu, Zhimin; Zhao, Yang; Qing, Bo; Yang, Guohong; Wei, Minxi; Yi, Rongqing; Song, Tianming; Li, Hang; Yuan, Zheng; Lv, Min; Meng, Xujun; Xu, Yan; Wu, Zeqing; Yan, Jun

2016-01-01

We report on opacity measurements of a silicon (Si) plasma at a temperature of (72 ± 5) eV and a density of (6.0 ± 1.2) mg cm-3 in the photon energy range of 1790-1880 eV. A 23 μg cm-2 Si foil tamped by 50 μg cm-2 CH layers on each side was heated to a hot-dense plasma state by X-ray radiation emitted from a D-shaped gold cavity that was irradiated by intense lasers. Absorption lines of 1s - 2p transitions of Si xiii to Si ix ions have been measured using point-projection spectroscopy. The transmission spectrum of the silicon plasma was determined by comparing the light passing through the plasma to the light from the same shot passing by the plasma. The density of the Si plasma was determined experimentally by side-on radiography and the temperature was estimated from the radiation flux data. Radiative hydrodynamic simulations were performed to obtain the temporal evolutions of the density and temperature of the Si plasma. The experimentally obtained transmission spectra of the Si sample plasma have been reproduced using a detailed term account model with the local thermodynamic equilibrium approximation. The energy levels, oscillator strengths and photoionization cross-sections used in the calculation were generated by the flexible atomic code. The experimental transmission spectrum was compared with the theoretical calculation and good agreement was found. The present experimental spectrum and theoretical calculation were also compared with the new opacities available in the Los Alamos OPLIB database.

Association of chronic disease prevalence and quality of life with suicide-related ideation and suicide attempt among Korean adults.

PubMed

Joshi, Pankaj; Song, Han-Byol; Lee, Sang-Ah

2017-01-01

The aim of this study is to find the association of chronic disease prevalence (CDP) with suicide-related ideation (SI) and suicide attempt (SA) and to determine the combined effect of CDP and quality of life (QoL) with SI or SA. This was a cross-sectional study. The data were collected from the nationally representative Korea National Health and Nutrition Examination Survey IV and V (2007-2012). For the analysis, a total of 35,075 adult participants were selected as the final sample, which included 5773 participants with SI and 331 with SA. Multiple logistic regression models were used to examine the odds ratio after adjusting for age, sex, marital status, education, occupation, and household income. SI was positively associated with selected CDP, such as cardiovascular disease (CVD), stroke, ischemic heart disease (IHD), cancer, diabetes, renal failure, and depression, except hypertension. Subjects with CVD, IHD, renal failure, and depression were found likely to have increased odds for SA as compared to non-SA controls. Lower QoL strongly affected SI and SA. Furthermore, the likelihood of SI increased for depressed and cancer subjects who had low QoL in comparison to subjects with high QoL and without chronic disease. Similarly, statistically, significant interaction was observed between lower QoL and depression in relation to SA compared to non-SA controls. These data suggest that suicide-related behavior could be predicted by the prevalence of chronic disease and low QoL.

The effect of Si nano-columns in 2-D and 3-D on cellular behaviour: nanotopography-induced CaP deposition from differentiating mesenchymal stem cells.

PubMed

Guvendik, S; Trabzon, L; Ramazanoglu, M

2011-10-01

Si nano-columns were deposited in 2-D and 3-D in the form of well-defined geometries by physical vapor deposition. The films were grown by e-beam evaporation with an angle between source and substrate. The Si nano-columns were deposited in the shape of spiral with two different incoming atomic flux angle so that the manipulation of nano-columns in 3-D (out-of-plane) was obtained. The Si nano-columns were also grown as vertical stick with square, triangle and linear cross sections in 2D (in-plane). Rat bone marrow mesenchymal stem cells (MSCs) were cultured on these different Si nanosurfaces. MTS assay was carried out to determine the cell proliferation and viability based on different nanotopographies. For the evaluation of cell distribution and morphology, a SEM (Scanning Electron Microscopy) analysis was performed. Any CaP deposition on Si nanosurfaces was observed using energy dispersive X-Ray spectroscopy in SEM (SEM-EDX). After 4 days of culture, there was a higher value of cell proliferation on square columns and spiral Si nano-columns grown with 85 degrees of incoming atomic flux. The cell attachment and spreading was also affected by the geometry of Si nano-columns. While there were still cells showing round/spherical morphology with minimal spreading on conventional Si surfaces, most of the cells cultured on different Si nanotopographies attached on the surface and displayed flattened morphology, especially on the square columns surface. Moreover, CaP deposition was discovered on square columns and spiral films with 85 degrees substrate angle. So, it can be concluded that there is a clear correlation between cell responses and nano-sized geometry on Si surface and it is possible to induce cellular differentiation and CaP formation in certain geometrical constraints.

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Y. T., E-mail: yasun@kth.se; Omanakuttan, G.; Lourdudoss, S.

2015-05-25

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reductionmore » effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.« less

Characterization of Mo/Si multilayer growth on stepped topographies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boogaard, A. J. R. vcan den; Louis, E.; Zoethout, E.

2011-08-31

Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the stepedge region was studied by cross section transmission electron microscopy. A transition from a continuous- to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum model has been developed to give a detailed description of the height profiles of the individual continuous layers. Complementary optical characterization of the multilayer system using amore » microscope operating in the extreme ultraviolet wavelength range, revealed that the influence of the step-edge on the planar multilayer structure is restricted to a region within 300 nm from the step-edge.« less

Single and multiple ionization of C60 fullerenes and collective effects in collisions with highly charged C, F, and Si ions with energy 3 MeV/u

NASA Astrophysics Data System (ADS)

Kelkar, A. H.; Kadhane, U.; Misra, D.; Gulyas, L.; Tribedi, L. C.

2010-10-01

We have measured absolute cross sections for single, double, triple, and quadruple ionization of C60 in collisions with 3 MeV/u C, F, and Si projectile ions at various projectile charge states. The experiment was performed using the recoil-ion time-of-flight technique. Projectile charge state dependence of the ionization yields was compared mainly with a model based on the giant dipole plasmon resonance (GDPR). In some cases, the continuum-distorted-wave-eikonal-initial-state (CDW-EIS) model which is normally applied for ion-atom collisions was also used as a reference. An excellent qualitative agreement between the experimental data for single and double ionization and the GDPR model predictions was found for all projectile charge states.

Structural transformation of macroporous silicon anodes as a result of cyclic lithiation processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, G. V.; Kulova, T. L.; Tolmachev, V. A., E-mail: tva@mail.ioffe.ru

2013-09-15

Anodes based on a regular lattice of macroporous silicon with different periods, sizes, and shapes of pore cross sections are studied. The discharge capacity and its degradation during cycling (embedding and extraction of lithium) are examined. Scanning electron microscopy is used to analyze changes in the electrode structure upon the lithiation/delithiation of Si and to evaluate the elemental composition of the porous material. An ex situ morphological analysis of the electrodes demonstrates that, on the whole, the porous structure is preserved upon cycling and the thickness of silicon walls increases. The degree of Si-wall destruction depends on their initial thickness.more » Estimates show that the electrolyte reduction process mainly occurs according to the two-electron mechanism, with inorganic salts of lithium formed as a result.« less

Ellipsoidal all-dielectric Fano resonant core-shell metamaterials

NASA Astrophysics Data System (ADS)

Reena, Reena; Kalra, Yogita; Kumar, Ajeet

2018-06-01

In this paper, ellipsoidal core (Si) and shell (SiO2) metamaterial has been proposed for highly directional properties. At the wavelength of magnetic resonance, Fano dip occurs in the backward scattering cross section and forward scattering enhancement takes place at the same wavelength so that there is an increment in the directivity. Effect on the directivity by changing the length of ellipsoidal nanoparticle along semi-axes has been analyzed. Two Fano resonances have been observed by decreasing the length of the nanoparticle along the semi-axis having electric polarization, where first and second Fano resonances are attributed to the dipole and quadrupole moments, respectively. These Fano resonant wavelengths in ellipsoidal nanoparticle exhibit higher directivity than the Kerker's type scattering or forward scattering shown by symmetrical structures like sphere. So, this core-shell metamaterial can act as an efficient directional nanoantenna.

The association between obesity and self-reported sinus infection in non-smoking adults: a cross-sectional study.

PubMed

Christensen, R A G; Raiber, L; Macpherson, A K; Kuk, J L

2016-12-01

The aim of this article was to examine the associations between having had a sinus infection (SI) and BMI and physical activity (PA), diet quality, stress and/or sleep. A total of 2915 adults from the National Health and Nutrition Examination Survey 2005-2006 were examined. Logistic regression analysis was used to examine the association between having had an SI with BMI and PA, diet quality, stress or sleep. As these factors are known to influence one another, a fully adjusted model with PA, diet quality, stress and sleep was also constructed to examine their independent associations with having had an SI. Overall, 15.5 ± 1.2% of the population report having had an SI in the past year. In all models, individuals with obesity were approximately twice as likely to have had an SI compared to those of normal weight (P < 0.05). While PA and diet quality were not significantly associated with having had an SI (P > 0.05), individuals with stress and sleep troubles were also twice as likely to have had an SI (P < 0.05) independent of BMI. In the fully adjusted model, only the associations for BMI and sleep troubles remained significant (P < 0.05). Results from this study suggest that obesity and sleep troubles, but not PA, quality of diet and stress, are associated with having had an SI. As interactions exist between obesity, immune system factors and exposure to infectious disease(s), more research is necessary to understand the directionality of these relationships. © 2016 World Obesity Federation.

Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

NASA Astrophysics Data System (ADS)

Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

2018-02-01

We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

Psychosocial predictors of suicidal ideation in patients diagnosed with chronic illnesses in Jordan.

PubMed

Amer, Nuha Remon Yacoub; Hamdan-Mansour, Ayman M

2014-11-01

Suicide ideation (SI) is considered a major psychiatric emergency in patients diagnosed with chronic illnesses. Suicide ideation is a multifaceted issue that involves bio- psychosocial and cultural factors that interfere with patients' abilities. The purpose of this study is to investigate the psychosocial predictors of SI among Jordanian patients with chronic illnesses. A cross-sectional design using self-administered questionnaires was used to collect data from 480 patients diagnosed with diabetes mellitus, cardiovascular diseases, and cancer. The mean score of suicide ideation was 4.07 (SD  =  1.7) and almost 20% (n  =  85) of the participants found to be suicidal, the majority were suffering from moderate to severe depressive symptoms and low levels of life satisfaction. Also, the analysis showed that the patients had a high level of optimism and moderate perception of social support from family, friends, and significant other. Type of illness has a significant relation to the 'seriousness' component of SI (p  =  0.023). Depression (β  =  0.345, p<0.001) was a significant risk factor for 'thought' component of SI, and optimism (β  =  -0.008, p<0.05) a significant protective factor against the thought component of SI. Patients with chronic illnesses suffer serious psychological disturbances and are in need of psychological care, and periodic psychological screening to maintain their psychological wellbeing.

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

NASA Astrophysics Data System (ADS)

Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

2014-08-01

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

Tissue-Specific and Genetic Regulation of Insulin Sensitivity-Associated Transcripts in African Americans

PubMed Central

Sharma, Neeraj K.; Sajuthi, Satria P.; Chou, Jeff W.; Calles-Escandon, Jorge; Demons, Jamehl; Rogers, Samantha; Ma, Lijun; Palmer, Nicholette D.; McWilliams, David R.; Beal, John; Comeau, Mary E.; Cherry, Kristina; Hawkins, Gregory A.; Menon, Lata; Kouba, Ethel; Davis, Donna; Burris, Marcie; Byerly, Sara J.; Easter, Linda; Bowden, Donald W.; Freedman, Barry I.; Langefeld, Carl D.

2016-01-01

Context: Compared with European Americans, African Americans (AAs) are more insulin resistant, have a higher insulin secretion response to glucose, and develop type 2 diabetes more often. Molecular processes and/or genetic variations contributing to altered glucose homeostasis in high-risk AAs remain uncharacterized. Objective: Adipose and muscle transcript expression profiling and genotyping were performed in 260 AAs to identify genetic regulatory mechanisms associated with insulin sensitivity (SI). We hypothesized that: 1) transcription profiles would reveal tissue-specific modulation of physiologic pathways with SI, and 2) a subset of SI-associated transcripts would be controlled by DNA sequence variants as expression quantitative traits, and these variants in turn would be associated with SI. Design and Settings: The cross-sectional research study was performed in a clinical research unit. Participants: Unrelated nondiabetic AAs were recruited for the study. Main Outcome Measures: SI was measured by frequently sampled iv glucose tolerance test. Results: The expression levels of 2212 transcripts in adipose and 145 transcripts in muscle were associated with SI. Genes involved in eIF2, eIF4-p70S6K, and mTOR signaling were modulated with SI in both tissues. Genes involved in leukocyte extravasation signaling showed adipose-specific regulation, and genes involved in oxidative phosphorylation had discordant regulation between tissues. Intersecting cis-expression quantitative trait loci results with data from transcript-SI association analysis identified cis-regulatory single nucleotide polymorphisms for 363 and 42 SI-associated transcripts in adipose and muscle, respectively. Cis-eSNPs for three SI-associated adipose transcripts, NINJ1, AGA, and CLEC10A were associated with SI. Abrogation of NINJ1 induction in THP1 macrophages modulated expression of genes in chemokine signaling, cell adhesion, and angiogenesis pathways. Conclusion: This study identified multiple pathways associated with SI; particularly discordant tissue-specific regulation of the oxidative phosphorylation pathway, and adipose-specific regulation of transcripts in the leukocyte extravasation signaling pathway that seem to be important in insulin resistance. Identification of single nucleotide polymorphisms associated with SI and with modulation of expression of SI-associated transcripts, including NINJ1, reveals novel genetic regulatory mechanisms of insulin resistance in AAs. PMID:26789776

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

NASA Astrophysics Data System (ADS)

García, H.; Castán, H.; Dueñas, S.; García-Hemme, E.; García-Hernansaz, R.; Montero, D.; González-Díaz, G.

2018-03-01

Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm-2 and 1014 cm-2) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not exceeded. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We found a single deep center at energy near E C - 200 meV. This value agrees with one of the levels found for vanadium in silicon. The capture cross-section values of the deep levels were also calculated, and we found a relationship between the capture cross-section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations. The Meyer-Neldel energy values agree with those previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

Theoretical electron-impact-ionization cross section for Fe11+ forming Fe12+

NASA Astrophysics Data System (ADS)

Kwon, Duck-Hee; Savin, Daniel Wolf

2012-08-01

We have calculated cross sections for electron impact ionization (EII) of P-like Fe11+ forming Si-like Fe12+. We have used the flexible atomic code (FAC) and a distorted-wave (DW) approximation. Particular attention has been paid to the ionization through the 3l→nl' and 2l→nl' excitation autoionization (EA) channels. We compare our results to previously published FAC DW results and recent experimental results. We find that the previous discrepancy between theory and experiment at the EII threshold can be accounted for by the 3l→nl' EA channels which were not included in the earlier calculations. At higher energies the discrepancy previously seen between theory and experiment for the magnitude of the 2l→nl'(n≥4) EA remains, though the difference has been reduced by our newer results. The resulting Maxwellian rate coefficient derived from our calculations lies within 11% of the experimentally derived rate coefficient in the temperature range where Fe11+ forms in collisional ionization equilibrium.

Cross sections and rate coefficients for inner-shell excitation of Li-like ions with 6 < Z < 42

NASA Astrophysics Data System (ADS)

Safronova, U. I.; Safronova, M. S.; Kato, T.

1996-07-01

Excitation cross sections and rate coefficients by electron impact were calculated for the 1s22s-1s2s2p, 1s22s-1s2s2 and 1s22s-1s2p2 transitions of the Li-like ions (C IV, N V, O VI, Ne VIII, Mg X, Al XI, Si XII, S XIV, Ar XVI, Ca XVIII, Ti XX, Fe XXIV, Ni XXVI, Zn XXVIII, Ge XXX, Se XXXII, Kr XXXIV and Mo XXXX) in the Coulomb-Born approximation with exchange including relativistic effects and configuration interaction. Level energies, mixing coefficients and transition wavelengths and probabilities were also computed. Calculations performed by the 1/Z perturbation theory and Coulomb-Born approximation are compared with the R-matrix method and the distorted-wave approximation were Z is the nuclear charge. Formulae obtained for the angular factors of n-electron atomic system allow one to generalize this method to an arbitrary system of highly charged ions.

Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

NASA Technical Reports Server (NTRS)

Woodworth, Andrew, A; Sayir, Ali; Neudeck, Philip, G; Raghothamachar, Balaji; Dudley, Michael

2012-01-01

Commercially available bulk silicon carbide (SiC) has a high number (>2000/sq cm) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by x-ray transmission Laue diffraction patterns and x-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.

The effect of fluoroethylene carbonate additive content on the formation of the solid-electrolyte interphase and capacity fade of Li-ion full-cell employing nano Si-graphene composite anodes

NASA Astrophysics Data System (ADS)

Bordes, Arnaud; Eom, KwangSup; Fuller, Thomas F.

2014-07-01

When fluoroethylene carbonate (FEC) is added to the ethylene carbonate (EC)-diethyl carbonate (DEC) electrolyte, the capacity and cyclability of full-cells employing Si-graphene anode and lithium nickel cobalt aluminum oxide cathode (NCA) cathode are improved due to formation of a thin (30-50 nm) SEI layer with low ionic resistance (∼2 ohm cm2) on the surface of Si-graphene anode. These properties are confirmed with electrochemical impedance spectroscopy and a cross-sectional image analysis using Focused Ion Beam (FIB)-SEM. Approximately 5 wt.% FEC in EC:DEC (1:1 wt.%) shows the highest capacity and most stability. This high capacity and low capacity fade is attributed to a more stable SEI layer containing less CH2OCO2Li, Li2CO3 and LiF compounds, which consume cyclable Li. Additionally, a greater amount of polycarbonate (PC), which is known to form a more robust passivation layer, thus reducing further reduction of electrolyte, is confirmed with X-ray photoelectron spectroscopy (XPS).

Fabrication of TiO2 nanostructures on porous silicon for thermoelectric application

NASA Astrophysics Data System (ADS)

Fahrizal, F. N.; Ahmad, M. K.; Ramli, N. M.; Ahmad, N.; Fakhriah, R.; Mohamad, F.; Nafarizal, N.; Soon, C. F.; Ameruddin, A. S.; Faridah, A. B.; Shimomura, M.; Murakami, K.

2017-09-01

Nowadays, technology is moving by leaps and bounds over the last several decades. This has created new opportunities and challenge in the research fields. In this study, the experiment is about to investigate the potential of Titanium Dioxide (TiO2) nanostructures that have been growth onto a layer of porous silicon (pSi) for their thermoelectric application. Basically, it is divided into two parts, which is the preparation of the porous silicon (pSi) substrate by electrochemical-etching process and the growth of the Titanium Dioxide (TiO2) nanostructures by hydrothermal method. This sample have been characterize by Field Emission Scanning Electron Microscopy (FESEM) to visualize the morphology of the TiO2 nanostructures area that formed onto the porous silicon (pSi) substrate. Besides, the sample is also used to visualize their cross-section images under the FESEM microscopy. Next, the sample is characterized by the X-Ray Diffraction (XRD) machine. The XRD machine is used to get the information about the chemical composition, crystallographic structure and physical properties of materials.

CVD of silicon carbide on structural fibers - Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

CVD of silicon carbide on structural fibers: Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

Fabrication mechanism of friction-induced selective etching on Si(100) surface

PubMed Central

2012-01-01

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems. PMID:22356699

Fabrication mechanism of friction-induced selective etching on Si(100) surface.

PubMed

Guo, Jian; Song, Chenfei; Li, Xiaoying; Yu, Bingjun; Dong, Hanshan; Qian, Linmao; Zhou, Zhongrong

2012-02-23

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

Elderly Koreans who consider suicide: Role of healthcare use and financial status.

PubMed

Park, Sang-Mi; Moon, Sang-Sik

2016-10-30

This study investigated associations between the use of healthcare services and financial status and suicidal ideation (SI) in the past year among elderly people. Additionally, this study explored gender differences in such associations. Cross-sectional data of 1743 elderly people aged 65 years and above, who participated in the 2009 Korea National Health and Nutrition Examination Survey, were analyzed. The results showed that lack of preventive care and failure to obtain necessary healthcare services during the last 12 months had a significant effect on SI, especially among elderly women. Low financial status (i.e., receipt of National Basic Livelihood Security (NBLS) assistance) was significantly associated with SI among elderly men. The findings of this study emphasize the need for community-based suicide intervention services, especially for elderly men who receive NBLS and elderly women who do not undergo medical checkups and fail to obtain necessary medical services. Multiple intervention approaches, including the provision of community-based geriatric psychiatric services, improved social support, links with general hospital services, and local monitoring programs, are likely to be useful. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Evidence for room-temperature in-diffusion of nickel into silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yarykin, Nikolai, E-mail: nay@iptm.ru; Weber, Jörg

2016-09-05

Interstitial nickel in crystalline Si is shown to be a fast diffuser at room temperature. In this study, Ni is incorporated in Si by wet chemical etching in nickel-contaminated alkaline solutions. Nickel in-diffusion is observed by means of detecting the electrically active NiVO defect, which is formed due to Ni capture to the vacancy–oxygen complex in electron-irradiated Si. The depth profiles of the NiVO concentration measured by the deep-level transient spectroscopy technique extend to ∼15 μm in the samples doped with Ni at 35 °C for 30 min. This allows us to get a lower estimate for the nickel diffusivity at this temperaturemore » as 10{sup −9} cm{sup 2}/s. The activation energy for electron emission from the NiVO level and the apparent capture cross section are equal to 371 meV and 3 × 10{sup −15} cm{sup 2}, respectively. The NiVO complex dissociates at 300 °C reestablishing the initial concentration of the VO centers.« less

Revascularization and muscle adaptation to limb demand ischemia in diet-induced obese mice.

PubMed

Albadawi, Hassan; Tzika, A Aria; Rask-Madsen, Christian; Crowley, Lindsey M; Koulopoulos, Michael W; Yoo, Hyung-Jin; Watkins, Michael T

2016-09-01

Obesity and type 2 diabetes are major risk factors for peripheral arterial disease in humans, which can result in lower limb demand ischemia and exercise intolerance. Exercise triggers skeletal muscle adaptation including increased vasculogenesis. The goal of this study was to determine whether demand ischemia modulates revascularization, fiber size, and signaling pathways in the ischemic hind limb muscles of mice with diet-induced obesity (DIO). DIO mice (n = 7) underwent unilateral femoral artery ligation and recovered for 2 wks followed by 4 wks with daily treadmill exercise to induce demand ischemia. A parallel sedentary ischemia (SI) group (n = 7) had femoral artery ligation without exercise. The contralateral limb muscles of SI served as control. Muscles were examined for capillary density, myofiber cross-sectional area, cytokine levels, and phosphorylation of STAT3 and ERK1/2. Exercise significantly enhanced capillary density (P < 0.01) and markedly lowered cross-sectional area (P < 0.001) in demand ischemia compared with SI. These findings coincided with a significant increase in granulocyte colony-stimulating factor (P < 0.001) and interleukin-7 (P < 0.01) levels. In addition, phosphorylation levels of STAT3 and ERK1/2 (P < 0.01) were increased, whereas UCP1 and monocyte chemoattractant protein-1 protein levels were lower (P < 0.05) without altering vascular endothelial growth factor and tumor necrosis factor alpha protein levels. Demand ischemia increased the PGC1α messenger RNA (P < 0.001) without augmenting PGC1α protein levels. Exercise-induced limb demand ischemia in the setting of DIO causes myofiber atrophy despite an increase in muscle capillary density. The combination of persistent increase in tumor necrosis factor alpha, lower vascular endothelial growth factor, and failure to increase PGC1α protein may reflect a deficient adaption to demand ischemia in DIO. Copyright © 2016 Elsevier Inc. All rights reserved.

Influence of dietary forage and feed intake on carbohydrase activities and small intestinal morphology of calves.

PubMed

Kreikemeier, K K; Harmon, D L; Peters, J P; Gross, K L; Armendariz, C K; Krehbiel, C R

1990-09-01

Twenty (12 Holstein, 8 Longhorn cross) calves (198 kg and 7 mo old) were used in a randomized complete block design to evaluate the effects of dietary forage concentration and feed intake on carbohydrase activities and small intestinal (SI) morphology. Calves were individually fed 90% forage (alfalfa) or a 90% concentrate (50% sorghum: 50% wheat) diet at either one or two times NEm for 140 d and slaughtered; tissues and small intestinal digesta were collected. Increased feed intake increased (P less than .05) pancreatic weight, alpha-amylase and glucoamylase activities in the pancreas, SI length and SI digesta weight. Forage-fed calves gained faster (P less than .01) and had greater (P less than .05) pancreatic protein concentrations, alpha-amylase and glucoamylase activities in the pancreas and greater SI digesta alpha-amylase activities than grain-fed calves did. Increased feed intake increased (P less than .01) mucosal weight/cm small intestine only in forage-fed calves and increased (P less than .05) SI surface/volume only in grain-fed calves. Mucosal weight was greatest (P less than .05) at the terminal ileum, surface/volume was greatest (P less than .05) in the duodenum, and mucosal protein concentration was highest (P less than .05) in the SI mid-section. Mucosal lactase was higher (P less than .05) in proximal segments, whereas mucosal isomaltase was higher in middle and distal segments of the small intestine. For mucosal maltase activity, there was a feed intake x SI sampling site interaction (P less than .05) and for trehalase, a diet x feed intake x SI sampling site interaction (P less than .05). The SI distribution patterns of maltase and isomaltase were similar, as were those of trehalase and lactase. The alpha-amylase activity in the pancreas and SI morphology were influenced greatly by diet composition and feed intake by calves.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Three-dimensional cross-linking composite of graphene, carbon nanotubes and Si nanoparticles for lithium ion battery anode

NASA Astrophysics Data System (ADS)

Tian, Suyun; Zhu, Guannan; Tang, Yanping; Xie, Xiaohua; Wang, Qian; Ma, Yufei; Ding, Guqiao; Xie, Xiaoming

2018-03-01

Various graphene-based Si nanocomposites have been reported to improve the performance of active materials in Li-ion batteries. However, these candidates still yield severe capacity fading due to the electrical disconnection and fractures caused by the huge volume changes over extended cycles. Therefore, we have designed a novel three-dimensional cross-linked graphene and single-wall carbon nanotube structure to encapsulate the Si nanoparticles. The synthesized three-dimensional structure is attributed to the excellent self-assembly of carbon nanotubes with graphene oxide as well as a thermal treatment process at 900 °C. This special structure provides sufficient void spaces for the volume expansion of Si nanoparticles and channels for the diffusion of ions and electrons. In addition, the cross-linking of the graphene and single-wall carbon nanotubes also strengthens the stability of the structure. As a result, the volume expansion of the Si nanoparticles is restrained. The specific capacity remains at 1450 mAh g-1 after 100 cycles at 200 mA g-1. This well-defined three-dimensional structure facilitates superior capacity and cycling stability in comparison with bare Si and a mechanically mixed composite electrode of graphene, single-wall carbon nanotubes and silicon nanoparticles.

Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study

PubMed Central

2013-01-01

We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix. PMID:24314071

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taboada, A. G., E-mail: gonzalez@phys.ethz.ch; Kreiliger, T.; Falub, C. V.

Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces.more » The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.« less

29 Si NMR and SAXS investigation of the hybrid organic–inorganic glasses obtained by consolidation of the melting gels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jitianu, Andrei; Cadars, Sylvian; Zhang, Fan

This study is focused on structural characterization of hybrid glasses obtained by consolidation of melting gels. The melting gels were prepared in molar ratios of methyltriethoxysilane (MTES) and dimethyldiethoxysilane (DMDES) of 75%MTES-25%DMDES and 65%MTES-35%DMDES. Following consolidation, the hybrid glasses were characterized using Raman, 29Si and 13C Nuclear Magnetic Resonance (NMR) spectroscopies, synchrotron Small Angle X-Ray Scattering (SAXS) and scanning electron microscopy (SEM). Raman spectroscopy revealed the presence of Si–C bonds in the hybrid glasses and 8-membered ring structures in the Si–O–Si network. Qualitative NMR spectroscopy identified the main molecular species, while quantitative NMR data showed that the ratio of trimersmore » (T) to dimers (D) varied between 4.6 and 3.8. Two-dimensional 29Si NMR data were used to identify two distinct types of T3 environments. SAXS data showed that the glasses are homogeneous across the nm to micrometer length scales. The scattering cross section was one thousand times lower than what is expected when phase separation occurs. The SEM images show a uniform surface without defects, in agreement with the SAXS results, which further supports that the hybrid glasses are nonporous.« less

Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study.

PubMed

Pita, Kantisara; Baudin, Pierre; Vu, Quang Vinh; Aad, Roy; Couteau, Christophe; Lérondel, Gilles

2013-12-06

We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.

Ultrafast optical measurements of surface waves on a patterned layered nanostructure

NASA Astrophysics Data System (ADS)

Daly, Brian; Bjornsson, Matteo; Connolly, Aine; Mahat, Sushant; Rachmilowitz, Bryan; Antonelli, George; Myers, Alan; Yoo, Hui-Jae; Singh, Kanwal; King, Sean

2015-03-01

We report ultrafast optical pump-probe measurements of 12 - 54 GHz surface acoustic waves (SAWs) on patterned layered nanostructures. These very high frequency SAWs were generated and detected on the following patterned film stack: 25 nm physically vapor deposited TiN / 180 nm porous PECVD-grown a-SiOC:H dielectric / 12 nm non-porous PECVD-grown a-SiOC:H etch-stop / 100 nm CVD-grown a-SiO2 / Si (100) substrate. The TiN layer was dry plasma etched to form lines of rectangular cross section with pitches of 420 nm, 250 nm, 180 nm, and 168 nm and the lines were oriented parallel to the [110] direction on the wafer surface. The absorption of ultrafast pulses from a Ti:sapphire oscillator operating at 800 nm generated SAWs that were detected by time-delayed probe pulses from the same oscillator via a reflectivity change (ΔR) . In each of the four cases the SAW frequency increased with decreasing pitch, but not in a linear way as had been seen in previous experiments of this sort. By comparing the results with mechanical simulations, we present evidence for the detection of different types of SAWs in each case, including Rayleigh-like waves, Sezawa waves, and leaky or radiative waves. This work was supported by NSF Award DMR1206681.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

PubMed

Ma, Y J; Zhong, Z; Yang, X J; Fan, Y L; Jiang, Z M

2013-01-11

We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21°, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 × 10(10) cm(-2), and that the lateral and the vertical interdot spacing were ~10 and ~2.5 nm, respectively.

Texture and mechanical properties of Al-0.5Mg-1.0Si-0.5Cu alloy sheets manufactured via a cross rolling method

NASA Astrophysics Data System (ADS)

Jeon, Jae-Yeol; Son, Hyeon-Taek; Woo, Kee-Do; Lee, Kwang-Jin

2012-04-01

The relationship between the texture and mechanical properties of 6xxx aluminum alloy sheets processed via cross rolling was investigated. The microstructures of the conventional rolled and cross rolled sheets after annealing were analyzed using optical micrographs (OM). The texture distribution across the thickness in the Al-Mg-Si-Cu alloy, conventional rolled sheets, and cross rolled sheets both before and after annealing was investigated via X-ray texture measurements. The texture was analyzed in three layers from the surface to the center of the sheet. The β-fiber texture of the conventional rolled sheet was typical of the texture obtained using aluminumoll ring. After annealing, the typical β-fiber orientations were changed to recrystallization textures: cube{001}<100> and normal direction (ND)-rotated cubes. However, the texture of the cross rolled sheet was composed of an asymmetrical, rolling direction (RD)-rotated cubes. After annealing, the asymmetrical orientations in the cross rolled sheet were changed to a randomized texture. The average R-value of the annealed cross rolled sheets was higher than that of the conventional rolled sheets. The limit dome height (LDH) test results demonstrated that cross rolling is effective in improving the formability of the Al-Mg-Si-Cu alloy sheets.

Cross-sectional transmission electron microscopic study of irradiation induced nano-crystallization of nickel in a W/Ni multilayer.

PubMed

Bagchi, Sharmistha; Lalla, N P

2008-06-11

The present study reports the cross-sectional transmission electron microscopic investigations of swift heavy ion-irradiation induced nano-size recrystallization of Ni in a nearly immiscible W/Ni multilayer structure. Multilayer structures (MLS) of [W(25 Å)/Ni(25 Å)](10BL) were grown on Si-(100) substrate by the ion-beam sputtering technique. The as-synthesized MLS were subjected to 120 MeV-Au(9+) ion-irradiation to a fluence of ∼5 × 10(13) ions cm(-2). Wide-angle x-ray diffraction studies of pristine as well as irradiated W/Ni multilayers show deterioration of the superlattice structure, whereas x-ray reflectivity (XRR) measurement reveals a nearly unaffected microstructure after irradiation. Analysis of the XRR data using 'Parratt's formalism' does show a significant increase of W/Ni interface roughness. Cross-sectional transmission electron microscopy (TEM) studies carried out in diffraction and imaging modes (including bright-field and dark-field imaging), show that at high irradiation dose the intralayer microstructure of Ni becomes nano-crystalline (1-2 nm). During these irradiation induced changes of the intralayer microstructure, the interlayer definition of the W and Ni layers still remains intact. The observed nano-recrystallization of Ni has been attributed to competition between low miscibility of the W/Ni interface and the ion-beam induced mixing kinetics.

Interface modification based ultrashort laser microwelding between SiC and fused silica.

PubMed

Zhang, Guodong; Bai, Jing; Zhao, Wei; Zhou, Kaiming; Cheng, Guanghua

2017-02-06

It is a big challenge to weld two materials with large differences in coefficients of thermal expansion and melting points. Here we report that the welding between fused silica (softening point, 1720°C) and SiC wafer (melting point, 3100°C) is achieved with a near infrared femtosecond laser at 800 nm. Elements are observed to have a spatial distribution gradient within the cross section of welding line, revealing that mixing and inter-diffusion of substances have occurred during laser irradiation. This is attributed to the femtosecond laser induced local phase transition and volume expansion. Through optimizing the welding parameters, pulse energy and interval of the welding lines, a shear joining strength as high as 15.1 MPa is achieved. In addition, the influence mechanism of the laser ablation on welding quality of the sample without pre-optical contact is carefully studied by measuring the laser induced interface modification.

Radiation Performance of Commercial SiGe HBT BiCMOS-High Speed Operational Amplifiers

NASA Technical Reports Server (NTRS)

Chen, Dakai; Pellish, Jonathan; Phan, Anthony; Kim, Hak; Burns, Sam; Albarian, Rafi; Holcombe, Bruce; Little, Bradley; Salzman, James; LaBel, Kenneth

2010-01-01

We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS operational amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs. The SET cross-sections increase with increasing operating frequency. The LTC6400 exhibits a LET(sub th) < 7.4 MeV·sq cm/mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LET(sub th) < 4.4 MeV·sq cm/mg at 200 MHz; the LET(sub th) decreases with increasing frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz can erase several signal cycles. We al.so found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.

Desorption induced by electronic transitions of Na from SiO2: relevance to tenuous planetary atmospheres.

NASA Astrophysics Data System (ADS)

Yakshinskiy, B. V.; Madey, T. E.

2000-04-01

The authors have studied the desorption induced by electronic transitions (DIET) of Na adsorbed on model mineral surfaces, i.e. amorphous, stoichiometric SiO2 films. They find that electron stimulated desorption (ESD) of atomic Na occurs for electron energy thresholds as low as ≡4 eV, that desorption cross-sections are high (≡1×10-19cm2 at 11 eV), and that desorbing atoms are 'hot', with suprathermal velocities. The estimated Na desorption rate from the lunar surface via ESD by solar wind electrons is a small fraction of the rate needed to sustain the Na atmosphere. However, the solar photon flux at energies ≥5 eV exceeds the solar wind electron flux by orders of magnitude; there are sufficient ultraviolet photons incident on the lunar surface to contribute substantially to the lunar Na atmosphere via PSD of Na from the surface.

RIE-based Pattern Transfer Using Nanoparticle Arrays as Etch Masks

NASA Astrophysics Data System (ADS)

Hogg, Chip; Majetich, Sara A.; Bain, James A.

2009-03-01

Nanomasking is used to transfer the pattern of a self-assembled array of nanoparticles into an underlying thin film, for potential use as bit-patterned media. We have used this process to investigate the limits of pattern transfer, as a function of gap size in the pattern. Reactive Ion Etching (RIE) is our chosen process, since the gaseous reaction products and high chemical selectivity are ideal features for etching very small gaps. Interstitial surfactant is removed with an O2 plasma, allowing the etchants to penetrate between the particles. Their pattern is transferred into an intermediate SiO2 mask using a CH4-based RIE. This patterned SiO2 layer is finally used as a mask for the MeOH-based RIE which patterns the magnetic film. We present cross-sectional TEM characterization of the etch profiles, as well as magnetic characterization of the film before and after patterning.

Effect of Different Structural Materials on Neutronic Performance of a Hybrid Reactor

NASA Astrophysics Data System (ADS)

Übeyli, Mustafa; Tel, Eyyüp

2003-06-01

Selection of structural material for a fusion-fission (hybrid) reactor is very important by taking into account of neutronic performance of the blanket. Refractory metals and alloys have much higher operating temperatures and neutron wall load (NWL) capabilities than low activation materials (ferritic/martensitic steels, vanadium alloys and SiC/SiC composites) and austenitic stainless steels. In this study, effect of primary candidate refractory alloys, namely, W-5Re, T111, TZM and Nb-1Zr on neutronic performance of the hybrid reactor was investigated. Neutron transport calculations were conducted with the help of SCALE 4.3 System by solving the Boltzmann transport equation with code XSDRNPM. Among the investigated structural materials, tantalum had the worst performance due to the fact that it has higher neutron absorption cross section than others. And W-5Re and TZM having similar results showed the best performance.

Titanium in silicon as a deep level impurity

NASA Technical Reports Server (NTRS)

Chen, J.-W.; Milnes, A. G.; Rohatgi, A.

1979-01-01

Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K.

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

PubMed Central

Filonovich, Sergej Alexandrovich; Águas, Hugo; Busani, Tito; Vicente, António; Araújo, Andreia; Gaspar, Diana; Vilarigues, Marcia; Leitão, Joaquim; Fortunato, Elvira; Martins, Rodrigo

2012-01-01

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (∼20 nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film. PMID:27877504

Single and multiple ionization of C{sub 60} fullerenes and collective effects in collisions with highly charged C, F, and Si ions with energy 3 MeV/u

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kelkar, A. H.; Kadhane, U.; Misra, D.

2010-10-15

We have measured absolute cross sections for single, double, triple, and quadruple ionization of C{sub 60} in collisions with 3 MeV/u C, F, and Si projectile ions at various projectile charge states. The experiment was performed using the recoil-ion time-of-flight technique. Projectile charge state dependence of the ionization yields was compared mainly with a model based on the giant dipole plasmon resonance (GDPR). In some cases, the continuum-distorted-wave-eikonal-initial-state (CDW-EIS) model which is normally applied for ion-atom collisions was also used as a reference. An excellent qualitative agreement between the experimental data for single and double ionization and the GDPR modelmore » predictions was found for all projectile charge states.« less

The influence of hold time on the onset of plastic deformation in silicon

DOE PAGES

Wong, Sherman; Haberl, Bianca; Bradby, Jodie E.; ...

2015-12-24

Here, the formation of silicon (Si) in its -Sn form is known to be nucleation limited, with an undetermined period of time between when critical pressure for the trans- formation is reached and when the transformation actually occurs. In this letter, we use nanoindentation to apply critical pressure to diamond cubic Si and hold the sample under pressure to promote deformation via phase transformation and crystalline defects. We report that the number of indents in which phase transformation is observed increases with increasing hold time. Interestingly, the number of indents in which crystalline defects are observed also increase with increasingmore » hold time, suggesting crystalline defects are also nucleation limited. Raman spectroscopy and cross-sectional transmission electron microscopy is used to show that these two deformation mechanisms are mutually exclusive under the indentation conditions used within this letter.« less

The role of adult attachment and social support in hoarding disorder.

PubMed

Medard, Emma; Kellett, Stephen

2014-09-01

Research concerning the role of attachment and social support in hoarding is currently under investigated. To investigate whether hoarders experience less social support and more problematic relationships, the degree to which attachment and social support predicts hoarding and whether attachment moderates the relationship between social support and hoarding. Measures of hoarding, attachment and social support were taken in a cross-sectional methodological design. Hoarders were identified via scores reaching caseness on the Savings Inventory-Revised (SI-R). Hoarders (N = 380) reported significantly higher levels of attachment anxiety and avoidance and significantly lower levels of social support than student (N = 670) and community (N = 379) controls. Attachment and social support predicted 13% of total SI-R scores for hoarders, and attachment anxiety (but not avoidance) moderated the inverse relationship between social support and hoarding. Attachment and social support appears problematic for hoarders. Clinical implications and methodological issues are noted.

Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits

PubMed Central

Zhang, Xi; Xu, Chengkun; Chong, Kyuchul; Tu, King-Ning; Xie, Ya-Hong

2011-01-01

A highly conductive moat or Faraday cage of through-the-wafer thickness in Si substrate was proposed to be effective in shielding electromagnetic interference thereby reducing radio frequency (RF) cross-talk in high performance mixed signal integrated circuits. Such a structure was realized by metallization of selected ultra-high-aspect-ratio macroporous regions that were electrochemically etched in p− Si substrates. The metallization process was conducted by means of wet chemistry in an alkaline aqueous solution containing Ni2+ without reducing agent. It is found that at elevated temperature during immersion, Ni2+ was rapidly reduced and deposited into macroporous Si and a conformal metallization of the macropore sidewalls was obtained in a way that the entire porous Si framework was converted to Ni. A conductive moat was as a result incorporated into p− Si substrate. The experimentally measured reduction of crosstalk in this structure is 5~18 dB at frequencies up to 35 GHz. PMID:28879960

Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits.

PubMed

Zhang, Xi; Xu, Chengkun; Chong, Kyuchul; Tu, King-Ning; Xie, Ya-Hong

2011-05-25

A highly conductive moat or Faraday cage of through-the-wafer thickness in Si substrate was proposed to be effective in shielding electromagnetic interference thereby reducing radio frequency (RF) cross-talk in high performance mixed signal integrated circuits. Such a structure was realized by metallization of selected ultra-high-aspect-ratio macroporous regions that were electrochemically etched in p - Si substrates. The metallization process was conducted by means of wet chemistry in an alkaline aqueous solution containing Ni 2+ without reducing agent. It is found that at elevated temperature during immersion, Ni 2+ was rapidly reduced and deposited into macroporous Si and a conformal metallization of the macropore sidewalls was obtained in a way that the entire porous Si framework was converted to Ni. A conductive moat was as a result incorporated into p - Si substrate. The experimentally measured reduction of crosstalk in this structure is 5~18 dB at frequencies up to 35 GHz.

Multi-scale predictive modeling of nano-material and realistic electron devices

NASA Astrophysics Data System (ADS)

Palaria, Amritanshu

Among the challenges faced in further miniaturization of electronic devices, heavy influence of the detailed atomic configuration of the material(s) involved, which often differs significantly from that of the bulk material(s), is prominent. Device design has therefore become highly interrelated with material engineering at the atomic level. This thesis aims at outlining, with examples, a multi-scale simulation procedure that allows one to integrate material and device aspects of nano-electronic design to predict behavior of novel devices with novel material. This is followed in four parts: (1) An approach that combines a higher time scale reactive force field analysis with density functional theory to predict structure of new material is demonstrated for the first time for nanowires. Novel stable structures for very small diameter silicon nanowires are predicted. (2) Density functional theory is used to show that the new nanowire structures derived in 1 above have properties different from diamond core wires even though the surface bonds in some may be similar to the surface of bulk silicon. (3) Electronic structure of relatively large-scale germanium sections of realistically strained Si/strained Ge/ strained Si nanowire heterostructures is computed using empirical tight binding and it is shown that the average non-homogeneous strain in these structures drives their interesting non-conventional electronic characteristics such as hole effective masses which decrease as the wire cross-section is reduced. (4) It is shown that tight binding, though empirical in nature, is not necessarily limited to the material and atomic structure for which the parameters have been empirically derived, but that simple changes may adapt the derived parameters to new bond environments. Si (100) surface electronic structure is obtained from bulk Si parameters.

Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

PubMed Central

Hsieh, Shu-Huei; Chen, Wen Jauh; Chien, Chu-Mo

2015-01-01

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resistances, by X-ray diffractometers for their crystal structures, by scanning electron microscopes for their surface morphologies, and by transmission electron microscopes for their cross-section and high resolution views. The results showed that the ultra-thin tri-layer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is an effective diffusion barrier against the interdiffusion between Cu film and Si substrate. The MgO, and Ta layers as deposited are amorphous. The mechanism for the failure of the diffusion barrier is that the Ru layer first became discontinuous at a high temperature and the Ta layer sequentially become discontinuous at a higher temperature, the Cu atoms then diffuse through the MgO layer and to the substrate at the discontinuities, and the Cu3Si phases finally form. The maximum temperature at which the structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si are annealed and still have low sheet resistance is from 550 to 750 °C for the annealing time of 5 min and from 500 to 700 °C for the annealing time of 30 min. PMID:28347099

Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

NASA Astrophysics Data System (ADS)

Sammak, Amir; Qi, Lin; Nanver, Lis K.

2015-12-01

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

Electron ionization of SiCl4

NASA Astrophysics Data System (ADS)

King, Simon J.; Price, Stephen D.

2011-02-01

Relative partial ionization cross sections (PICS) for the formation of fragment ions following electron ionization of SiCl4, in the electron energy range 30-200 eV, have been determined using time-of-flight mass spectrometry coupled with an ion coincidence technique. By this method, the contributions to the yield of each fragment ion from dissociative single, double, and triple ionization, are distinguished. These yields are quantified in the form of relative precursor-specific PICS, which are reported here for the first time for SiCl4. For the formation of singly charged ionic fragments, the low-energy maxima appearing in the PICS curves are due to contributions from single ionization involving predominantly indirect ionization processes, while contributions to the yields of these ions at higher electron energies are often dominated by dissociative double ionization. Our data, in the reduced form of relative PICS, are shown to be in good agreement with a previous determination of the PICS of SiCl4. Only for the formation of doubly charged fragment ions are the current relative PICS values lower than those measured in a previous study, although both datasets agree within combined error limits. The relative PICS data presented here include the first quantitative measurements of the formation of Cl2+ fragment ions and of the formation of ion pairs via dissociative double ionization. The peaks appearing in the 2D ion coincidence data are analyzed to provide further information concerning the mechanism and energetics of the charge-separating dissociations of SiCl42+. The lowest energy dicationic precursor state, leading to SiCl3+ + Cl+ formation, lies 27.4 ± 0.3 eV above the ground state of SiCl4 and is in close agreement with a calculated value of the adiabatic double ionization energy (27.3 eV).

Electron ionization of SiCl4.

PubMed

King, Simon J; Price, Stephen D

2011-02-21

Relative partial ionization cross sections (PICS) for the formation of fragment ions following electron ionization of SiCl(4), in the electron energy range 30-200 eV, have been determined using time-of-flight mass spectrometry coupled with an ion coincidence technique. By this method, the contributions to the yield of each fragment ion from dissociative single, double, and triple ionization, are distinguished. These yields are quantified in the form of relative precursor-specific PICS, which are reported here for the first time for SiCl(4). For the formation of singly charged ionic fragments, the low-energy maxima appearing in the PICS curves are due to contributions from single ionization involving predominantly indirect ionization processes, while contributions to the yields of these ions at higher electron energies are often dominated by dissociative double ionization. Our data, in the reduced form of relative PICS, are shown to be in good agreement with a previous determination of the PICS of SiCl(4). Only for the formation of doubly charged fragment ions are the current relative PICS values lower than those measured in a previous study, although both datasets agree within combined error limits. The relative PICS data presented here include the first quantitative measurements of the formation of Cl(2) (+) fragment ions and of the formation of ion pairs via dissociative double ionization. The peaks appearing in the 2D ion coincidence data are analyzed to provide further information concerning the mechanism and energetics of the charge-separating dissociations of SiCl(4) (2+). The lowest energy dicationic precursor state, leading to SiCl(3) (+) + Cl(+) formation, lies 27.4 ± 0.3 eV above the ground state of SiCl(4) and is in close agreement with a calculated value of the adiabatic double ionization energy (27.3 eV).

How common is self-incompatibility across species of the herkogamous genus Ariocarpus?

PubMed

Martínez-Peralta, Concepción; Márquez-Guzmán, Judith; Mandujano, María C

2014-03-01

Self-incompatibility (SI), the most effective mechanism to prevent selfing, may limit the number of compatible mates in populations. The seven species of Ariocarpus are endangered and predominantly outcrossers but fruit set may reach 1-20% after selfing. We aimed to determine whether SI is the underlying mechanism influencing mating in Ariocarpus species. We characterized the presence/absence of SI using pollination treatments (self-pollination, cross-pollination, natural pollination) in one population per species. We assessed SI using epifluorescence and generalized linear models (GLMs) to compare the presence of pollen tubes in the stigma, stylar transmitting tissue, and ovary among self- and cross-pollinated pistils 48 h after pollination. Following the same treatments, production of fruit set was noted and related to pollen tube growth. Pollen tubes were found more frequently in the ovaries of natural and cross-pollinated flowers than in ovaries of self-pollinated. Stylar rejection of self-pollen indicated gametophytic SI, although pollen tubes reached the ovaries in six species (4-33% of pistils). Fruit set was lower after hand-pollinations than expected from pollen tube observations. The low percentages of self-compatibility in all species in pollen tube growth and pollination experiments indicated that no species had complete self-sterility, suggesting the presence of partial SI. Reduced fruit set relative to pollen tube production could result from a threshold of insufficient pollination, early-acting inbreeding depression, or resource limitation. The origin of partial SI in Ariocarpus could respond to pressures such as pollen limitation and population size.

Association of chronic disease prevalence and quality of life with suicide-related ideation and suicide attempt among Korean adults

PubMed Central

Joshi, Pankaj; Song, Han-Byol; Lee, Sang-Ah

2017-01-01

Aims: The aim of this study is to find the association of chronic disease prevalence (CDP) with suicide-related ideation (SI) and suicide attempt (SA) and to determine the combined effect of CDP and quality of life (QoL) with SI or SA. Design: This was a cross-sectional study. Materials and Methods: The data were collected from the nationally representative Korea National Health and Nutrition Examination Survey IV and V (2007–2012). For the analysis, a total of 35,075 adult participants were selected as the final sample, which included 5773 participants with SI and 331 with SA. Statistical Analysis: Multiple logistic regression models were used to examine the odds ratio after adjusting for age, sex, marital status, education, occupation, and household income. Results and Conclusion: SI was positively associated with selected CDP, such as cardiovascular disease (CVD), stroke, ischemic heart disease (IHD), cancer, diabetes, renal failure, and depression, except hypertension. Subjects with CVD, IHD, renal failure, and depression were found likely to have increased odds for SA as compared to non-SA controls. Lower QoL strongly affected SI and SA. Furthermore, the likelihood of SI increased for depressed and cancer subjects who had low QoL in comparison to subjects with high QoL and without chronic disease. Similarly, statistically, significant interaction was observed between lower QoL and depression in relation to SA compared to non-SA controls. These data suggest that suicide-related behavior could be predicted by the prevalence of chronic disease and low QoL. PMID:29085096

Transcriptome analysis reveals self-incompatibility in the tea plant (Camellia sinensis) might be under gametophytic control.

PubMed

Zhang, Cheng-Cai; Wang, Li-Yuan; Wei, Kang; Wu, Li-Yun; Li, Hai-Lin; Zhang, Fen; Cheng, Hao; Ni, De-Jiang

2016-05-17

Self-incompatibility (SI) is under genetic control and prevents inbreeding depression in angiosperms. SI mechanisms are quite complicated and still poorly understood in many plants. Tea (Camellia sinensis L.) belonging to the family of Theaceae, exhibits high levels of SI and high heterozygosity. Uncovering the molecular basis of SI of the tea plant may enhance breeding and simplify genomics research for the whole family. The growth of pollen tubes following selfing and crossing was observed using fluorescence microscopy. Self-pollen tubes grew slower than cross treatments from 24 h to 72 h after pollination. RNA-seq was employed to explore the molecular mechanisms of SI and to identify SI-related genes in C. sinensis. Self and cross-pollinated styles were collected at 24 h, 48 h and 72 h after pollination. Six RNA-seq libraries (SP24, SP48, SP72, CP24 CP48 and CP72; SP = self-pollinated, CP = cross-pollinated) were constructed and separately sequenced. In total, 299.327 million raw reads were generated. Following assembly, 63,762 unigenes were identified, and 27,264 (42.76 %) unigenes were annotated in five public databases: NR, KOG, KEGG, Swiss-Port and GO. To identify SI-related genes, the fragments per kb per million mapped reads (FPKM) values of each unigene were evaluated. Comparisons of CP24 vs. SP24, CP48 vs. SP48 and CP72 vs. SP72 revealed differential expression of 3,182, 3,575 and 3,709 genes, respectively. Consequently, several ubiquitin-mediated proteolysis, Ca(2+) signaling, apoptosis and defense-associated genes were obtained. The temporal expression pattern of genes following CP and SP was analyzed; 6 peroxidase, 1 polyphenol oxidase and 7 salicylic acid biosynthetic process-related genes were identified. The RNA-seq data were validated by qRT-PCR of 15 unigenes. Finally, a unigene (CL25983Contig1) with strong homology to the S-RNase was analyzed. It was mainly expressed in styles, with dramatically higher expression in self-pollinated versus cross-pollinated tissues at 24 h post-pollination. The present study reports the transcriptome of styles after cross- and self-pollination in tea and offers novel insights into the molecular mechanism behind SI in C. sinensis. We believe that this RNA-seq dataset will be useful for improvement in C. sinensis as well as other plants in the Theaceae family.

Tungsten Isotopic Compositions in Stardust SiC Grains from the Murchison Meteorite: Constraints on the s-process in the Hf-Ta-W-Re-Os Region

NASA Astrophysics Data System (ADS)

Ávila, Janaína N.; Lugaro, Maria; Ireland, Trevor R.; Gyngard, Frank; Zinner, Ernst; Cristallo, Sergio; Holden, Peter; Buntain, Joelene; Amari, Sachiko; Karakas, Amanda

2012-01-01

We report the first tungsten isotopic measurements in stardust silicon carbide (SiC) grains recovered from the Murchison carbonaceous chondrite. The isotopes 182,183,184,186W and 179,180Hf were measured on both an aggregate (KJB fraction) and single stardust SiC grains (LS+LU fraction) believed to have condensed in the outflows of low-mass carbon-rich asymptotic giant branch (AGB) stars with close-to-solar metallicity. The SiC aggregate shows small deviations from terrestrial (= solar) composition in the 182W/184W and 183W/184W ratios, with deficits in 182W and 183W with respect to 184W. The 186W/184W ratio, however, shows no apparent deviation from the solar value. Tungsten isotopic measurements in single mainstream stardust SiC grains revealed lower than solar 182W/184W, 183W/184W, and 186W/184W ratios. We have compared the SiC data with theoretical predictions of the evolution of W isotopic ratios in the envelopes of AGB stars. These ratios are affected by the slow neutron-capture process and match the SiC data regarding their 182W/184W, 183W/184W, and 179Hf/180Hf isotopic compositions, although a small adjustment in the s-process production of 183W is needed in order to have a better agreement between the SiC data and model predictions. The models cannot explain the 186W/184W ratios observed in the SiC grains, even when the current 185W neutron-capture cross section is increased by a factor of two. Further study is required to better assess how model uncertainties (e.g., the formation of the 13C neutron source, the mass-loss law, the modeling of the third dredge-up, and the efficiency of the 22Ne neutron source) may affect current s-process predictions.

Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.

PubMed

Norris, D J; Myronov, M; Leadley, D R; Walther, T

2017-12-01

We compare transmission electron microscopical analyses of the onset of islanding in the germanium-on-silicon (Ge/Si) system for three different Si substrate orientations: (001), (11¯0) and (11¯1)Si. The Ge was deposited by reduced pressure chemical vapour deposition and forms islands on the surface of all Si wafers; however, the morphology (aspect ratio) of the deposited islands is different for each type of wafer. Moreover, the mechanism for strain relaxation is different for each type of wafer owing to the different orientation of the (111) slip planes with the growth surface. Ge grown on (001)Si is initially pseudomorphically strained, yielding small, almost symmetrical islands of high aspect ratio (clusters or domes) on top interdiffused SiGe pedestals, without any evidence of plastic relaxation by dislocations, which would nucleate later-on when the islands might have coalesced and then the Matthews-Blakeslee limit is reached. For (11¯0)Si, islands are flatter and more asymmetric, and this is correlated with plastic relaxation of some islands by dislocations. In the case of growth on (11¯1)Si wafers, there is evidence of immediate strain relaxation taking place by numerous dislocations and also twinning. In the case of untwined film/substrate interfaces, Burgers circuits drawn around certain (amorphous-like) regions show a nonclosure with an edge-type a/4[1¯12] Burgers vector component visible in projection along [110]. Microtwins of multiples of half unit cells in thickness have been observed which occur at the growth interface between the Si(11¯1) buffer layer and the overlying Ge material. Models of the growth mechanisms to explain the interfacial configurations of each type of wafer are suggested. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Fe-Si particles on the surface of blast furnace coke

NASA Astrophysics Data System (ADS)

Gornostayev, Stanislav S.; Heikkinen, Eetu-Pekka; Heino, Jyrki J.; Fabritius, Timo M. J.

2015-07-01

This study investigates the surface of unpolished samples of blast furnace (BF) coke drilled from the tuyere zone, which hosts Fe-Si particles (mostly Fe3Si) that vary in size, shape, depth of submersion (penetration) into the coke matrix, and contact features with the surface. Based on the shape of the particles and the extent of their contact with the coke matrix, they have been grouped into three major types: (I) sphere-like droplets with limited contact area, (II) semi-spheres with a larger contact area, and (III) irregular segregations with a spherical surface, which exhibit the largest contact area among the three types of particles. Considering the ratio between the height ( h) of the particles and half of their length at the surface level ( l) along the cross-section, these three types can be characterized as follows: (I) h > l, (II) h ≈ l, and (III) h < l. All the three types of particles can be found near each other. The shape and the extent of the contact depend on the degree of penetration of the material into the matrix, which is a function of the composition of the particles. Type (I) particles were initially saturated with Si at an earlier stage and, for that reason, they can react less with carbon in the coke matrix than type (II) and (III), thereby moving faster through the coke cone. Thermodynamic calculations have shown that the temperature interval of 1250-1300°C can be considered the starting point for Si entering into molten iron under quartz-dominated coke ash. Accordingly, the initial pick-up of Si by molten iron can be assumed to be mineral-related. In terms of BF practice, better conditions for sliding Fe-Si droplets through the coke cone are available when they come into contact with free SiO2 concentrated into small grains, and when the SiO2/ΣMe x O y mass ratio in the coke ash is high.

Isobaric analog states in rare-earth nuclei studied with the ( 3He, t) charge-exchange reaction at θL = 0°

NASA Astrophysics Data System (ADS)

Jänecke, J.; Aarts, E. H. L.; Drentje, A. G.; Harakeh, M. N.; Gaarde, C.

1983-02-01

The ( 3He, t) charge-exchange reaction leading to the ground-state isobaric analog states (IAS) of 152, 154, 156, 158, 160Gd, 160,162Dy, 162,164,166,168,170Er, 170, 172, 174, 176Yb and 176, 178, 180Hf has been studied at θL = 0° and E( 3He) = 60.5 MeV. The reaction 28Si( 3He, t) 28P was used for energy calibration. The centroid energies of most IAS were determined to ±6 keV. Coulomb displacement energies have been extracted from the measured Q-values. They display the influence of non-spherical nuclear shapes which increase the rms radii and lower the Coulomb displacement energies. The dependence on both quadrupole and hexadecapole deformations is apparent with deformation parameters in good agreement with results from other measurements. The total widths Γ of the IAS are in the range 30 to 110 keV. They increase more strongly with neutron excess than is known for the IAS of the Sn and Te isotopes. The width of the IAS of 176Yb is anomalously low. The zero-degree ( 3He, t) cross sections are in the range 5 to 20 μb/sr. They generally increase with neutron excess except for the sequence of Yb isotopes. No systematic dependence on ( N - Z) appears to exist. Excitation energies and zero-degree cross sections for the reactions 28Si( 3He, t) 28P, 16O( 3He,t) 16F and 12C( 3He,t) 12N are reported.

Weakly interacting massive particle-nucleus elastic scattering response

NASA Astrophysics Data System (ADS)

Anand, Nikhil; Fitzpatrick, A. Liam; Haxton, W. C.

2014-06-01

Background: A model-independent formulation of weakly interacting massive particle (WIMP)-nucleon scattering was recently developed in Galilean-invariant effective field theory. Purpose: Here we complete the embedding of this effective interaction in the nucleus, constructing the most general elastic nuclear cross section as a factorized product of WIMP and nuclear response functions. This form explicitly defines what can and cannot be learned about the low-energy constants of the effective theory—and consequently about candidate ultraviolet theories of dark matter—from elastic scattering experiments. Results: We identify those interactions that cannot be reliably treated in a spin-independent/spin-dependent (SI/SD) formulation: For derivative- or velocity-dependent couplings, the SI/SD formulation generally mischaracterizes the relevant nuclear operator and its multipolarity (e.g., scalar or vector) and greatly underestimates experimental sensitivities. This can lead to apparent conflicts between experiments when, in fact, none may exist. The new nuclear responses appearing in the factorized cross section are related to familiar electroweak nuclear operators such as angular momentum l⃗(i) and the spin-orbit coupling σ⃗(i).l⃗(i). Conclusions: To unambiguously interpret experiments and to extract all of the available information on the particle physics of dark matter, experimentalists will need to (1) do a sufficient number of experiments with nuclear targets having the requisite sensitivities to the various operators and (2) analyze the results in a formalism that does not arbitrarily limit the candidate operators. In an appendix we describe a code that is available to help interested readers implement such an analysis.

Fabrication and Characterization of Diffusion Bonds for Silicon Carbide

NASA Technical Reports Server (NTRS)

Halbig, Michael; Singh, Mrityunjay; Martin, Richard E.; Cosgriff, Laura M.

2007-01-01

Diffusion bonds of silicon carbide (SiC) were fabricated using several different types of titanium (Ti) based interlayers between the SiC substrates. The interlayers were an alloyed Ti foil, a pure Ti foil, and a physically vapor deposited (PVD) Ti coating. Microscopy was conducted to evaluate the cross-sections of the resulting bonds. Microprobe analysis identified reaction formed phases in the diffusion bonded region. Uniform and well adhered bonds were formed between the SiC substrates. In the case where the alloyed Ti foil or a thick Ti coating (i.e. 20 micron) was used as the interlayer, microcracks and several phases were present in the diffusion bonds. When a thinner interlayer was used (i.e. 10 micron PVD Ti), no microcracks were observed and only two reaction formed phases were present. The two phases were preferred and fully reacted phases that did not introduce thermal stresses or microcracks during the cool-down stage after processing. Diffusion bonded samples were evaluated with the non-destructive evaluation (NDE) methods of pulsed thermography and immersion ultrasonic testing. Joined SiC substrates that were fully bonded and that had simulated bond flaws in the interlayer were also evaluated using immersion ultrasound. Pull testing was conducted on the bonds to determine the tensile strength. To demonstrate the joining approach for a complex multilayered component for a low NOx injector application, the diffusion bonding approach was used to join three 4" diameter SiC discs that contained complex fuel and air flow channels.

Effect of sputtered titanium interlayers on the properties of nanocrystalline diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Cuiping, E-mail: licp226@126.com, E-mail: limingji@163.com; Li, Mingji, E-mail: licp226@126.com, E-mail: limingji@163.com; Wu, Xiaoguo

2016-04-07

Ti interlayers with different thicknesses were sputtered on Si substrates and then ultrasonically seeded in a diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet chemical vapor deposition system on the seeded Ti/Si substrates. Atomic force microscopy and scanning electron microscopy tests showed that the roughness of the prepared Ti interlayer increased with increasing thickness. The effects of Ti interlayers with various thicknesses on the properties of NCD films were investigated. The results show nucleation, growth, and microstructure of the NCD films are strongly influenced by the Ti interlayers. The addition of a Timore » interlayer between the Si substrate and the NCD films can significantly enhance the nucleation rate and reduce the surface roughness of the NCD. The NCD film on a 120 nm Ti interlayer possesses the fastest nucleation rate and the smoothest surface. Raman spectra of the NCD films show trans-polyacetylene relevant peaks reduce with increasing Ti interlayer thickness, which can owe to the improvement of crystalline at grain boundaries. Furthermore, nanoindentation measurement results show that the NCD film on a 120 nm Ti interlayer displays a higher hardness and elastic modulus. High resolution transmission electron microscopy images of a cross-section show that C atoms diffuse into the Ti layer and Si substrate and form TiC and SiC hard phases, which can explain the enhancement of mechanical properties of NCD.« less

Associations between sleep disturbance and suicidal ideation in adolescents admitted to an inpatient psychiatric unit.

PubMed

Kaplan, Sebastian G; Ali, Shahzad K; Simpson, Brittany; Britt, Victoria; McCall, W Vaughn

2014-01-01

The goals of our study were to: 1) describe the incidence of disturbances in sleep quality, sleep hygiene, sleep-related cognitions and nightmares; and 2) investigate the association between these sleep-related disturbances and suicidal ideation (SI), in adolescents admitted to a psychiatric inpatient unit. Our sample consisted of 50 adolescents between the ages of 12 and 17 years (32 females and 18 males; 41 Caucasian and nine African American). Our cross-sectional design involved the administration of the Adolescent Sleep Wake Scale (ASWS), the Adolescent Sleep Hygiene Scale (ASHS), the Dysfunctional Beliefs and Attitudes about Sleep-Short version for use with children (DBAS-C10), the Disturbing Dreams and Nightmare Scale (DDNSI), and the Suicidal Ideation Questionnaire Jr (SIQ-JR). Analyses were conducted using Pearson correlations, as well as univariate and multivariate regression. Results indicated that our sample experienced sleep disturbances and SI to a greater degree than non-clinical samples. Sleep quality was correlated with nightmares, while sleep quality and nightmares were each correlated with SI. Sleep quality, dysfunctional beliefs, and nightmares each independently predicted SI. Our study was the first to use the four sleep measures with an adolescent psychiatric inpatient sample. It is important to develop sleep-related assessment tools in high-risk populations given the link between sleep disturbances and suicidality. Furthermore, a better understanding of the relationships between SI and sleep quality, sleep-related cognitions, and nightmares is needed to develop potential prevention and treatment options for suicidality in adolescents.

Magnetic resonance neurography evaluation of chronic extraspinal sciatica after remote proximal hamstring injury: a preliminary retrospective analysis.

PubMed

Bucknor, Matthew D; Steinbach, Lynne S; Saloner, David; Chin, Cynthia T

2014-08-01

Extraspinal sciatica can present unique challenges in clinical diagnosis and management. In this study, the authors evaluated qualitative and quantitative patterns of sciatica-related pathology at the ischial tuberosity on MR neurography (MRN) studies performed for chronic extraspinal sciatica. Lumbosacral MRN studies obtained in 14 patients at the University of California, San Francisco between 2007 and 2011 were retrospectively reviewed. The patients had been referred by neurosurgeons or neurologists for chronic unilateral sciatica (≥ 3 months), and the MRN reports described asymmetrical increased T2 signal within the sciatic nerve at the level of the ischial tuberosity. MRN studies were also performed prospectively in 6 healthy volunteers. Sciatic nerve T2 signal intensity (SI) and cross-sectional area at the ischial tuberosity were calculated and compared between the 2 sides in all 20 subjects. The same measurements were also performed at the sciatic notch as an internal reference. Adjacent musculoskeletal pathology was compared between the 2 sides in all subjects. Seven of the 9 patients for whom detailed histories were available had a specific history of injury or trauma near the proximal hamstring preceding the onset of sciatica. Eight of the 14 patients also demonstrated soft-tissue abnormalities adjacent to the proximal hamstring origin. The remaining 6 had normal muscles, tendons, and marrow in the region of the ischial tuberosity. There was a significant difference in sciatic nerve SI and size between the symptomatic and asymptomatic sides at the level of the ischial tuberosity, with a mean adjusted SI of 1.38 compared with 1.00 (p < 0.001) and a mean cross-sectional nerve area of 0.66 versus 0.54 cm(2) (p = 0.002). The control group demonstrated symmetrical adjusted SI and sciatic nerve size. This study suggests that chronic sciatic neuropathy can be seen at the ischial tuberosity in the setting of prior proximal hamstring tendon injury or adjacent soft-tissue abnormalities. Because hamstring tendon injury as a cause of chronic sciatica remains a diagnosis of exclusion, this distinct category of patients has not been described in the radiographic literature and merits special attention from clinicians and radiologists in the management of extraspinal sciatica. Magnetic resonance neurography is useful for evaluating chronic sciatic neuropathy both qualitatively and quantitatively, particularly in patients for whom electromyography and traditional MRI studies are unrevealing.

Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

NASA Astrophysics Data System (ADS)

Mitschker, F.; Wißing, J.; Hoppe, Ch; de los Arcos, T.; Grundmeier, G.; Awakowicz, P.

2018-04-01

The respective effect of average incorporated ion energy and impinging atomic oxygen flux on the deposition of silicon oxide (SiO x ) barrier coatings for polymers is studied in a microwave driven low pressure discharge with additional variable RF bias. Under consideration of plasma parameters, bias voltage, film density, chemical composition and particle fluxes, both are determined relative to the effective flux of Si atoms contributing to film growth. Subsequently, a correlation with barrier performance and chemical structure is achieved by measuring the oxygen transmission rate (OTR) and by performing x-ray photoelectron spectroscopy. It is observed that an increase in incorporated energy to 160 eV per deposited Si atom result in an enhanced cross-linking of the SiO x network and, therefore, an improved barrier performance by almost two orders of magnitude. Furthermore, independently increasing the number of oxygen atoms to 10 500 per deposited Si atom also lead to a comparable barrier improvement by an enhanced cross-linking.

Fabrication of microchannels in polycrystalline diamond using pre-fabricated Si substrates

NASA Astrophysics Data System (ADS)

Chandran, Maneesh; Elfimchev, Sergey; Michaelson, Shaul; Akhvlediani, Rozalia; Ternyak, Orna; Hoffman, Alon

2017-10-01

In this paper, we report on a simple, feasible method to fabricate microchannels in diamond. Polycrystalline diamond microchannels were produced by fabricating trenches in a Si wafer and subsequently depositing a thin layer of diamond onto this substrate using the hot filament vapor deposition technique. Fabrication of trenches in the Si substrate at different depths was carried out by standard photolithography, and the subsequent deposition of the diamond layer was performed by the hot filament chemical vapor deposition technique. The growth mechanism of diamond that leads to the formation of closed diamond microchannels is discussed in detail based on the Knudsen number and growth chemistry of diamond. Variations in the crystallite size, crystalline quality, and thickness of the diamond layer along the trench depths were systematically analyzed using cross-sectional scanning electron microscopy and Raman spectroscopy. Defect density and formation of non-diamond forms of carbon in the diamond layer were found to increase with the trench depth, which sets a limit of 5-45 μm trench depth (or an aspect ratio of 1-9) for the fabrication of diamond microchannels using this method under the present conditions.

High performance 1.2 Ah Si-alloy/Graphite|LiNi0.5Mn0.3Co0.2O2 prototype Li-ion battery

NASA Astrophysics Data System (ADS)

Marinaro, Mario; Yoon, Dong-hwan; Gabrielli, Giulio; Stegmaier, Petra; Figgemeier, Egbert; Spurk, Paul C.; Nelis, Daniël; Schmidt, Gregory; Chauveau, Jerome; Axmann, Peter; Wohlfahrt-Mehrens, Margret

2017-07-01

The study reports on realization and electrochemical testing of prototype Si-alloy/Graphite|LiNi0.5Mn0.3Co0.2O2 batteries. Water soluble polyacrylic acid (PAA), used as the only binder at the anode side, demonstrates excellent dispersant and binding properties. Sedimentation tests and rheological measurements show remarkable stability and mostly a thinning behavior of the non-Newtonian type of slurry. The cathode is processed in N-Methylpyrrolidone based slurry using polyvinylidene fluoride (PVDF) as the binding agent. The electronic conductivities of the manufactured Si-alloy/Graphite and LiNi0.5Mn0.3Co0.2O2 electrodes are evaluated. Furthermore, the cathode and anode electrochemical behavior is initially studied in half-cells, and subsequently in full Li-ion stacked prototype soft pouch-cells (1.22 Ah). It is demonstrated that the manufactured prototype cells can sustain about 290 charge/discharge galvanostatic cycles before the retained capacity drops below 80%. Cell aging is monitored using Electrochemical Impedance Spectroscopy (EIS), whereas post-mortem SEM analysis of electrodes cross-section is used to shed light on the causes of performance degradation of the cells.

Silicon nanowire sensor for DNA detection and sequencing: an ab initio simulation

NASA Astrophysics Data System (ADS)

Lu, Wenchang; Li, Yan; Hodak, Miroslav; Xiao, Zhongcan; Bernholc, Jerry

Electrical sensors able to detect DNA replication and determine its sequence would enable fast and relatively cheap diagnosis of gene-related vulnerabilities and cancers. At present, it is already possible to electrically monitor DNA replication events using a Klenow fragment of polymerase I attached to a carbon nanotube. Since devices based on Si nanowires would be much easier to produce in quantity, we examine theoretically the sensitivity of a Si nanowire/Klenow fragment for electrical detection of nucleotide addition. A highly parallel real-space multigrid code is used for DFT-based non-equilibrium Green's function calculations involving up to 16,000 atoms, employing highly-accurate variationally-optimized localized orbitals. We find that the open and closed Klenow fragment configurations, prior and during nucleotide addition, respectively, screen the Si nanowire differently and result in a detectable current difference. The sensitivity is the largest in the subthreshold regime while the absolute current difference is maximized in the turn-on state. The sensitivity decreases with an increase of the nanowire size, as expected, but the current difference between different enzymatic states is nearly independent on the nanowire size up to 800 Å2 cross section.

Pellet cladding mechanical interactions of ceramic claddings fuels under light water reactor conditions

NASA Astrophysics Data System (ADS)

Li, Bo-Shiuan

Ceramic materials such as silicon carbide (SiC) are promising candidate materials for nuclear fuel cladding and are of interest as part of a potential accident tolerant fuel design due to its high temperature strength, dimensional stability under irradiation, corrosion resistance, and lower neutron absorption cross-section. It also offers drastically lower hydrogen generation in loss of coolant accidents such as that experienced at Fukushima. With the implementation of SiC material properties to the fuel performance code, FRAPCON, performances of the SiC-clad fuel are compared with the conventional Zircaloy-clad fuel. Due to negligible creep and high stiffness, SiC-clad fuel allows gap closure at higher burnup and insignificant cladding dimensional change. However, severe degradation of SiC thermal conductivity with neutron irradiation will lead to higher fuel temperature with larger fission gas release. High stiffness of SiC has a drawback of accumulating large interfacial pressure upon pellet-cladding mechanical interactions (PCMI). This large stress will eventually reach the flexural strength of SiC, causing failure of SiC cladding instantly in a brittle manner instead of the graceful failure of ductile metallic cladding. The large interfacial pressure causes phenomena that were previously of only marginal significance and thus ignored (such as creep of the fuel) to now have an important role in PCMI. Consideration of the fuel pellet creep and elastic deformation in PCMI models in FRAPCON provide for an improved understanding of the magnitude of accumulated interfacial pressure. Outward swelling of the pellet is retarded by the inward irradiation-induced creep, which then reduces the rate of interfacial pressure buildup. Effect of PCMI can also be reduced and by increasing gap width and cladding thickness. However, increasing gap width and cladding thickness also increases the overall thermal resistance which leads to higher fuel temperature and larger fission gas release. An optimum design is sought considering both thermal and mechanical models of this ceramic cladding with UO2 and advanced high density fuels.

Surface topography of silicon nitride affects antimicrobial and osseointegrative properties of tibial implants in a murine model.

PubMed

Ishikawa, Masahiro; de Mesy Bentley, Karen L; McEntire, Bryan J; Bal, B Sonny; Schwarz, Edward M; Xie, Chao

2017-12-01

While silicon nitride (Si 3 N 4 ) is an antimicrobial and osseointegrative orthopaedic biomaterial, the contribution of surface topography to these properties is unknown. Using a methicillin-resistant strain of Staphylococcus aureus (MRSA), this study evaluated Si 3 N 4 implants in vitro utilizing scanning electron microscopy (SEM) with colony forming unit (CFU) assays, and later in an established in vivo murine tibia model of implant-associated osteomyelitis. In vitro, the "as-fired" Si 3 N 4 implants displayed significant reductions in adherent bacteria versus machined Si 3 N 4 (2.6 × 10 4 vs. 8.7 × 10 4 CFU, respectively; p < 0.0002). Moreover, SEM imaging demonstrated that MRSA cannot directly adhere to native as-fired Si 3 N 4 . Subsequently, a cross-sectional study was completed in which sterile or MRSA contaminated as-fired and machined Si 3 N 4 implants were inserted into the tibiae of 8-week old female Balb/c mice, and harvested on day 1, 3, 5, 7, 10, or 14 post-operatively for SEM. The findings demonstrated that the antimicrobial activity of the as-fired implants resulted from macrophage clearance of the bacteria during biofilm formation on day 1, followed by osseointegration through the apparent recruitment of mesenchymal stem cells on days 3-5, which differentiated into osteoblasts on days 7-14. In contrast, the antimicrobial behavior of the machined Si 3 N 4 was due to repulsion of the bacteria, a phenomenon that also limited osteogenesis, as host cells were also unable to adhere to the machined surface. Taken together, these results suggest that the in vivo biological behavior of Si 3 N 4 orthopaedic implants is driven by critical features of their surface nanotopography. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 3413-3421, 2017. © 2017 Wiley Periodicals, Inc.

Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

NASA Astrophysics Data System (ADS)

Raut, A. P.; Deshpande, V. K.

2018-01-01

The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

Probing the fusion of neutron-rich nuclei with re-accelerated radioactive beams

NASA Astrophysics Data System (ADS)

Vadas, J.; Singh, Varinderjit; Wiggins, B. B.; Huston, J.; Hudan, S.; deSouza, R. T.; Lin, Z.; Horowitz, C. J.; Chbihi, A.; Ackermann, D.; Famiano, M.; Brown, K. W.

2018-03-01

We report the first measurement of the fusion excitation functions for K,4739+28Si at near-barrier energies. Evaporation residues resulting from the fusion process were identified by direct measurement of their energy and time of flight with high geometric efficiency. At the lowest incident energy, the cross section measured for the neutron-rich 47K-induced reaction is ≈6 times larger than that of the β -stable system. This experimental approach, both in measurement and in analysis, demonstrates how to efficiently measure fusion with low-intensity re-accelerated radioactive beams, establishing the framework for future studies.

Achievement of controlled resistive response of nanogapped palladium film to hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Wong, M. H.; Ong, C. W., E-mail: c.w.ong@polyu.edu.hk

2015-07-20

Palladium (Pd) film containing nanogaps of well controlled dimension was fabricated on a Si wafer having a high-aspect-ratio micropillar. The Pd film was arranged to experience hydrogen (H{sub 2})-induced volume expansion. (i) If the nanogap is kept open, its width is narrowed down. A discharge current was generated to give a strong, fast, and repeatable on-off type resistive switching response. (ii) If the nanogap is closed, the cross section of the conduction path varies to give continuous H{sub 2}-concentration dependent resistive response. The influence of stresses and related physical mechanisms are discussed.

Dead time corrections for inbeam γ-spectroscopy measurements

NASA Astrophysics Data System (ADS)

Boromiza, M.; Borcea, C.; Negret, A.; Olacel, A.; Suliman, G.

2017-08-01

Relatively high counting rates were registered in a proton inelastic scattering experiment on 16O and 28Si using HPGe detectors which was performed at the Tandem facility of IFIN-HH, Bucharest. In consequence, dead time corrections were needed in order to determine the absolute γ-production cross sections. Considering that the real counting rate follows a Poisson distribution, the dead time correction procedure is reformulated in statistical terms. The arriving time interval between the incoming events (Δt) obeys an exponential distribution with a single parameter - the average of the associated Poisson distribution. We use this mathematical connection to calculate and implement the dead time corrections for the counting rates of the mentioned experiment. Also, exploiting an idea introduced by Pommé et al., we describe a consistent method for calculating the dead time correction which completely eludes the complicated problem of measuring the dead time of a given detection system. Several comparisons are made between the corrections implemented through this method and by using standard (phenomenological) dead time models and we show how these results were used for correcting our experimental cross sections.

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

NASA Technical Reports Server (NTRS)

George, M. A.; Burger, A.; Collins, W. E.; Davidson, J. L.; Barnes, A. V.; Tolk, N. H.

1994-01-01

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

Controlling compositional homogeneity and crystalline orientation in Bi 0.8 Sb 0.2 thermoelectric thin films [Control of composition and crystallinity in Bi 0.8Sb 0.2 thermoelectric thin films].

DOE PAGES

Rochford, C.; Medlin, D. L.; Erickson, K. J.; ...

2015-12-01

Controlling alloy composition, crystalline quality, and crystal orientation is necessary to achieve high thermoelectric performance in Bi 1-xSb x thin films. These microstructural attributes are demonstrated in this letter via co-sputter deposition of Bi and Sb metals on Si/SiO 2 substrates followed by ex-situ post anneals ranging from 200 – 300 °C in forming gas with rapid cooling to achieve orientation along the trigonal axis. We show with cross-sectional transmission electron microscopy and energy-dispersive X-ray spectrometry that 50 – 95% of the Sb segregates at the surface upon exposure to air during transfer. This then forms a nanocrystalline Sb 2Omore » 3 layer upon annealing, leaving the bulk of the film primarily Bi metal which is a poor thermoelectric material. We demonstrate a SiN capping technique to eliminate Sb segregation and preserve a uniform composition throughout the thickness of the film. Given that the Bi 1-xSb x solid solution melting point depends on the Sb content, the SiN cap allows one to carefully approach but not exceed the melting point during annealing. This leads to the strong orientation along the trigonal axis and high crystalline quality desired for thermoelectric applications.« less

The Effect of Grain Size on the Radiation Response of Silicon Carbide and its Dependence on Irradiation Species and Temperature

NASA Astrophysics Data System (ADS)

Jamison, Laura

In recent years the push for green energy sources has intensified, and as part of that effort accident tolerant and more efficient nuclear reactors have been designed. These reactors demand exceptional material performance, as they call for higher temperatures and doses. Silicon carbide (SiC) is a strong candidate material for many of these designs due to its low neutron cross-section, chemical stability, and high temperature resistance. The possibility of improving the radiation resistance of SiC by reducing the grain size (thus increasing the sink density) is explored in this work. In-situ electron irradiation and Kr ion irradiation was utilized to explore the radiation resistance of nanocrystalline SiC (nc-SiC), SiC nanopowders, and microcrystalline SiC. Electron irradiation simplifies the experimental results, as only isolated Frenkel pairs are produced so any observed differences are simply due to point defect interactions with the original microstructure. Kr ion irradiation simulates neutron damage, as large radiation cascades with a high concentration of point defects are produced. Kr irradiation studies found that radiation resistance decreased with particle size reduction and grain refinement (comparing nc-SiC and microcrystalline SiC). This suggests that an interface-dependent amorphization mechanism is active in SiC, suggested to be interstitial starvation. However, under electron irradiation it was found that nc-SiC had improved radiation resistance compared to single crystal SiC. This was found to be due to several factors including increased sink density and strength and the presence of stacking faults. The stacking faults were found to improve radiation response by lowering critical energy barriers. The change in radiation response between the electron and Kr ion irradiations is hypothesized to be due to either the change in ion type (potential change in amorphization mechanism) or a change in temperature (at the higher temperatures of the Kr ion irradiation, critical energy barriers can be overcome without the assistance of stacking faults). The dependence of the radiation response of SiC on grain size is not as straight forward as initially presumed. The stacking faults present in many nc-SiC materials boost radiation resistance, but an increased number of interfaces may lead to a reduction in radiation response.

Effects of SiC nanoparticles orally administered in a rat model: Biodistribution, toxicity and elemental composition changes in feces and organs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lozano, Omar, E-mail: omar.lozanogarcia@fundp.ac.be; Research Centre for the Physics of Matter and Radiation; Laloy, Julie

2012-10-15

Background: Silicon carbide (SiC) presents noteworthy properties as a material such as high hardness, thermal stability, and photoluminescent properties as a nanocrystal. However, there are very few studies in regard to the toxicological potential of SiC NPs. Objectives: To study the toxicity and biodistribution of silicon carbide (SiC) nanoparticles in an in vivo rat model after acute (24 h) and subacute (28 days) oral administrations. The acute doses were 0.5, 5, 50, 300 and 600 mg·kg{sup −1}, while the subacute doses were 0.5 and 50 mg·kg{sup −1}. Results: SiC biodistribution and elemental composition of feces and organs (liver, kidneys, andmore » spleen) have been studied by Particle-Induced X-ray Emission (PIXE). SiC and other elements in feces excretion increased by the end of the subacute assessment. SiC did not accumulate in organs but some elemental composition modifications were observed after the acute assessment. Histopathological sections from organs (stomach, intestines, liver, and kidneys) indicate the absence of damage at all applied doses, in both assessments. A decrease in the concentration of urea in blood was found in the 50 mg·kg{sup −1} group from the subacute assessment. No alterations in the urine parameters (sodium, potassium, osmolarity) were found. Conclusion: This is the first study that assesses the toxicity, biodistribution, and composition changes in feces and organs of SiC nanoparticles in an in vivo rat model. SiC was excreted mostly in feces and low traces were retrieved in urine, indicating that SiC can cross the intestinal barrier. No sign of toxicity was however found after oral administration. -- Highlights: ► SiC nanoparticles were orally administered to rats in acute and subacute doses. ► SiC was found in low traces in urine. It is mostly excreted in feces within 5 days. ► SiC excretion rate, feces and organ elemental composition change with time. ► No morphological alteration were found on GI tract, liver, kidneys, or spleen. ► Urea increased in blood in the subacute assessment. No change in urine properties.« less

Impact of physical activity, sedentary behaviour and muscle strength on bone stiffness in 2-10-year-old children-cross-sectional results from the IDEFICS study.

PubMed

Herrmann, Diana; Buck, Christoph; Sioen, Isabelle; Kouride, Yiannis; Marild, Staffan; Molnár, Dénes; Mouratidou, Theodora; Pitsiladis, Yannis; Russo, Paola; Veidebaum, Toomas; Ahrens, Wolfgang

2015-09-17

Physical activity (PA), weight-bearing exercises (WBE) and muscle strength contribute to skeletal development, while sedentary behaviour (SB) adversely affects bone health. Previous studies examined the isolated effect of PA, SB or muscle strength on bone health, which was usually assessed by x-ray methods, in children. Little is known about the combined effects of these factors on bone stiffness (SI) assessed by quantitative ultrasound. We investigated the joint association of PA, SB and muscle strength on SI in children. In 1512 preschool (2- < 6 years) and 2953 school children (6-10 years), data on calcaneal SI as well as on accelerometer-based sedentary time (SED), light (LPA), moderate (MPA) and vigorous PA (VPA) were available. Parents reported sports (WBE versus no WBE), leisure time PA and screen time of their children. Jumping distance and handgrip strength served as indicators for muscle strength. The association of PA, SB and muscle strength with SI was estimated by multivariate linear regression, stratified by age group. Models were adjusted for age, sex, country, fat-free mass, daylight duration, consumption of dairy products and PA, or respectively SB. Mean SI was similar in preschool (79.5 ± 15.0) and school children (81.3 ± 12.1). In both age groups, an additional 10 min/day in MPA or VPA increased the SI on average by 1 or 2%, respectively (p ≤ .05). The negative association of SED with SI decreased after controlling for MVPA. LPA was not associated with SI. Furthermore, participation in WBE led to a 3 and 2% higher SI in preschool (p = 0.003) and school children (p < .001), respectively. Although muscle strength significantly contributed to SI, it did not affect the associations of PA with SI. In contrast to objectively assessed PA, reported leisure time PA and screen time showed no remarkable association with SI. This study suggests that already an additional 10 min/day of MPA or VPA or the participation in WBE may result in a relevant increase in SI in children, taking muscle strength and SB into account. Our results support the importance of assessing accelerometer-based PA in large-scale studies. This may be important when deriving dose-response relationships between PA and bone health in children.

Secretinite-Reflectance and chemical data from two high volatile bituminous coals (Upper Carboniferous) of North America

USGS Publications Warehouse

Lyons, P.C.; Mastalerz, Maria

2001-01-01

Secretinite - a maceral of the inertinite group as recognized by the ICCP in 1996- is a noncellular maceral of seed fern origin. New reflectance data indicate that this maceral has primary anisotropy with bireflectances of 0.4% to 0.9% in high-volatile B bituminous (Ro = 0.6%) Carboniferous coal of North America. The highest reflectance is in cross-section as opposed to longitudinal section. Characteristic feature of secretinite is the virtual absence of Si and Al, unlike that in associated vitrinite. This indicates the absence of submicron aluminosilicates in secretinite and their presence in vitrinites. Secretinite is highly aromatic as indicated by low O/C ratios and high contribution of aromatic hydrogen bands detected by FTIR analysis. ?? 2001 Elsevier Science B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P.

Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detectionmore » limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.« less

Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

NASA Astrophysics Data System (ADS)

Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

2018-04-01

Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

Direct measurement of neon production rates by (α,n) reactions in minerals

NASA Astrophysics Data System (ADS)

Cox, Stephen E.; Farley, Kenneth A.; Cherniak, Daniele J.

2015-01-01

The production of nucleogenic neon from alpha particle capture by 18O and 19F offers a potential chronometer sensitive to temperatures higher than the more widely used (U-Th)/He chronometer. The accuracy depends on the cross sections and the calculated stopping power for alpha particles in the mineral being studied. Published 18O(α,n)21Ne production rates are in poor agreement and were calculated from contradictory cross sections, and therefore demand experimental verification. Similarly, the stopping powers for alpha particles are calculated from SRIM (Stopping Range of Ions in Matter software) based on a limited experimental dataset. To address these issues we used a particle accelerator to implant alpha particles at precisely known energies into slabs of synthetic quartz (SiO2) and barium tungstate (BaWO4) to measure 21Ne production from capture by 18O. Within experimental uncertainties the observed 21Ne production rates compare favorably to our predictions using published cross sections and stopping powers, indicating that ages calculated using these quantities are accurate at the ∼3% level. In addition, we measured the 22Ne/21Ne ratio and (U-Th)/He and (U-Th)/Ne ages of Durango fluorapatite, which is an important model system for this work because it contains both oxygen and fluorine. Finally, we present 21Ne/4He production rate ratios for a variety of minerals of geochemical interest along with software for calculating neon production rates and (U-Th)/Ne ages.

Sequential roles of primary somatosensory cortex and posterior parietal cortex in tactile-visual cross-modal working memory: a single-pulse transcranial magnetic stimulation (spTMS) study.

PubMed

Ku, Yixuan; Zhao, Di; Hao, Ning; Hu, Yi; Bodner, Mark; Zhou, Yong-Di

2015-01-01

Both monkey neurophysiological and human EEG studies have shown that association cortices, as well as primary sensory cortical areas, play an essential role in sequential neural processes underlying cross-modal working memory. The present study aims to further examine causal and sequential roles of the primary sensory cortex and association cortex in cross-modal working memory. Individual MRI-based single-pulse transcranial magnetic stimulation (spTMS) was applied to bilateral primary somatosensory cortices (SI) and the contralateral posterior parietal cortex (PPC), while participants were performing a tactile-visual cross-modal delayed matching-to-sample task. Time points of spTMS were 300 ms, 600 ms, 900 ms after the onset of the tactile sample stimulus in the task. The accuracy of task performance and reaction time were significantly impaired when spTMS was applied to the contralateral SI at 300 ms. Significant impairment on performance accuracy was also observed when the contralateral PPC was stimulated at 600 ms. SI and PPC play sequential and distinct roles in neural processes of cross-modal associations and working memory. Copyright © 2015 Elsevier Inc. All rights reserved.

Cross Sections for the Production of Cosmogenic Nuclides with Protons up to 400 MeV for the Interpretation of Cosmic-Ray-produced Nuclides

NASA Astrophysics Data System (ADS)

Schiekel, Th.; Rosel, R.; Herpers, U.; Bodemann, R.; Leya, I.; Gloris, M.; Michel, R.; Dittrich, B.; Kubik, P.; Suter, M.

1993-07-01

Integral excitation functions of the cosmogenic nuclides are the basic requirement for the interpretation of interactions between cosmic ray particles and extraterrestrial and terrestrial matter. Together with the knowledge of primary and secondary particle fields inside an irradiated body, model calculations can be developed to interpret abundances of cosmogenic nuclides in dependencies of the irradiation history of the irradiated body and of the cosmic particle ray itself. The quality of those model calculations depends on the quality of the available cross-section database, which is neither comprehensive nor reliable for the most important nuclides like the long-lived radionuclides (i.e., 10Be, 26Al, 36Cl, 41Ca) and the stable rare gas isotopes. For a systematic investigation in this field of science we carried out several irradiation experiments with protons in the energy region between 45 MeV and 400 MeV at the Paul Scherrer Institut (Villigen, Switzerland) and the Laboratoire Nationale Saturne (Saclay, France) using the stacked foil technique. We included 21 different target elements with Z between 6 and 79 (C, N as Si3N4, O as SiO2, Mg, Al, Si, Ca as CaC2H2O4, Ti, V, Mn as Mn/Ni alloy, Fe, Co, Ni, Cu, Sr as SrF2, Y, Zr, Nb, Rh, Ba as Ba containing glass and Au) in our experiments. The proton fluxes were monitored via the reaction 27Al(p,3p3n)22Na using the evaluated data of [1]. Residual nuclides were measured by X-, gamma-, and after a chemical separation by accelerator mass spectrometry. In order to check the quality of our experimental procedures we included some target elements in our new experiments for which consistent excitation functions have already been determined [2,3,4]. Our new data show excellent agreement with the earlier measurements. We measured cross sections for more than 120 different reactions. Here we report on the results for target elements with Z up to 28. The exsisting database of experimental excitation functions for the production of some radionuclides relevant for cosmic ray interactions with extraterrestrial and terrestrial matter, i.e., 7Be, 10Be, 22Na, 26Al, and 36Cl is discussed in detail. By a comparison of our new cross-section database with theoretical calculations, the ability to predict unknown excitation functions on the basis of equilibrium and preequilibrium reactions (code ALICE) and an internuclear cascade evaporation model (code HETC) is analyzed. The new data are applied to model calculations for the production of long-lived radionuclides by solar cosmic rays in lunar surface materials and in meteorites. Acknowledgment: This work was supported by the Deutsche Forschungsgemeinschaft and by the Swiss National Science Foundation. References: [1] Tobailem J. and de Lassus St. Genies C. H. (1981) CEA-N-1466. [2] Michel R. et al. (1984) JGR, 89, B673-B684. [3] Michel R. et al. (1985) Nucl. Phys., A441, 617-639. [4] Luepke M. et al. (1992) in Nuclear Data for Science and Technology (S. M. Qaim, ed.), 702, Springer Verlag.

Photoelectron angular distribution from free SiO2 nanoparticles as a probe of elastic electron scattering.

PubMed

Antonsson, E; Langer, B; Halfpap, I; Gottwald, J; Rühl, E

2017-06-28

In order to gain quantitative information on the surface composition of nanoparticles from X-ray photoelectron spectroscopy, a detailed understanding of photoelectron transport phenomena in these samples is needed. Theoretical results on the elastic and inelastic scattering have been reported, but a rigorous experimental verification is lacking. We report in this work on the photoelectron angular distribution from free SiO 2 nanoparticles (d = 122 ± 9 nm) after ionization by soft X-rays above the Si 2p and O 1s absorption edges, which gives insight into the relative importance of elastic and inelastic scattering channels in the sample particles. The photoelectron angular anisotropy is found to be lower for photoemission from SiO 2 nanoparticles than that expected from the theoretical values for the isolated Si and O atoms in the photoelectron kinetic energy range 20-380 eV. The reduced angular anisotropy is explained by elastic scattering of the outgoing photoelectrons from neighboring atoms, smearing out the atomic distribution. Photoelectron angular distributions yield detailed information on photoelectron elastic scattering processes allowing for a quantification of the number of elastic scattering events the photoelectrons have undergone prior to leaving the sample. The interpretation of the experimental photoelectron angular distributions is complemented by Monte Carlo simulations, which take inelastic and elastic photoelectron scattering into account using theoretical values for the scattering cross sections. The results of the simulations reproduce the experimental photoelectron angular distributions and provide further support for the assignment that elastic and inelastic electron scattering processes need to be considered.

Suicidal ideation and attentional biases in children: An eye-tracking study.

PubMed

Tsypes, Aliona; Owens, Max; Gibb, Brandon E

2017-11-01

Despite theoretical and empirical evidence for a heighted responsiveness to signals of social-threat in suicidal individuals, no studies to date have examined whether this responsiveness might also manifest in the form of specific biases in attention to interpersonal stimuli. The current study, therefore, examined the presence and nature of attentional biases for facial expressions of emotion in children with and without a history of suicidal ideation (SI). Participants were 88 children (44 with a history of SI and 44 demographically and clinically matched controls without such history) recruited from the community. The average age of children was 9.26 years (44.3% female; 67.0% Caucasian). Children's history of SI was assessed via structured interviews with children and their parent. Attentional biases were assessed using a dot probe task and included fearful, happy, and sad facial stimuli and focused on eye tracking and reaction time indices of attentional bias. Children with a history of SI exhibited significantly greater gaze duration toward fearful faces. The findings appeared to be at least partially independent of children's history of major depression or anxiety disorders or their current depressive or anxious symptoms. The study is limited by its cross-sectional design, which precludes any causal conclusions regarding the role of attentional biases in future suicide risk. Our results suggest that children with a history of SI exhibit biases in sustained attention toward socially-threatening facial expressions. Pending replications, these findings might represent a new avenue of suicide risk assessment and intervention. Copyright © 2017 Elsevier B.V. All rights reserved.

The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

NASA Astrophysics Data System (ADS)

Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.

2013-09-01

The tensile stress in light-emitting diode (LED)-on-Si(1 1 1) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(1 1 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AlN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.

A cross sectional study of surgical training among United Kingdom general practitioners with specialist interests in surgery.

PubMed

Ferguson, H J M; Fitzgerald, J E F; Reilly, J; Beamish, A J; Gokani, V J

2015-04-08

Increasing numbers of minor surgical procedures are being performed in the community. In the UK, general practitioners (family medicine physicians) with a specialist interest (GPwSI) in surgery frequently undertake them. This shift has caused decreases in available cases for junior surgeons to gain and consolidate operative skills. This study evaluated GPwSI's case-load, procedural training and perceptions of offering formalised operative training experience to surgical trainees. Prospective, questionnaire-based cross-sectional study. A novel, 13-item, self-administered questionnaire was distributed to members of the Association of Surgeons in Primary Care (ASPC). A total 113 of 120 ASPC members completed the questionnaire, representing a 94% response rate. Respondents were general practitioners practising or intending to practice surgery in the community. Respondents performed a mean of 38 (range 5-150) surgical procedures per month in primary care. 37% (42/113) of respondents had previously been awarded Membership or Fellowship of a Surgical Royal College; 22% (25/113) had completed a surgical certificate or diploma or undertaken a course of less than 1 year duration. 41% (46/113) had no formal British surgical qualifications. All respondents believed that surgical training in primary care could be valuable for surgical trainees, and the majority (71/113, 63%) felt that both general practice and surgical trainees could benefit equally from such training. There is a significant volume of surgical procedures being undertaken in the community by general practitioners, with the capacity and appetite for training of prospective surgeons in this setting, providing appropriate standards are achieved and maintained, commensurate with current standards in secondary care. Surgical experience and training of GPwSI's in surgery is highly varied, and does not yet benefit from the quality assurance secondary care surgical training in the UK undergoes. The Royal Colleges of Surgery and General Practice are well placed to invest in such infrastructure to provide long-term, high-quality service and training in the community. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Associations between lower urinary tract dysfunction and glycemic control in women with type 2 diabetes: A cross-sectional study.

PubMed

Tai, Huai-Ching; Tai, Tong-Yuan; Yang, Wei-Shiung; Wang, Shin-Wei; Yu, Hong-Jeng

2016-04-01

Patients with diabetes are predisposed to develop a variety of complications, including lower urinary tract (LUT) dysfunction. We aimed to examine the associations between glycemic control and LUT dysfunction in women with type 2 diabetes (T2D). We included 400 women with T2D (age range, 48-75 years) in this cross-sectional analysis. The participants were divided into tertiles according to glycosylated hemoglobin (HbA1c) measurements. The mean HbA1c levels for tertiles 1, 2, and 3 were 6.2% (N=132), 7.1% (N=132), and 8.4% (N=136), respectively. We evaluated LUT dysfunction with the American Urological Association Symptom Index (AUA-SI) questionnaire, uroflowmetry (UFM), and post-void residual (PVR). No significant differences were found among HbA1c tertiles regarding storage, voiding and total AUA-SI scores, and prevalence of LUT symptoms. However, women in tertile 3 had higher prevalences of severe LUT symptoms (AUA-SI≥20) and clinically significant PVR (≥100mL) compared to women in the other tertiles. Multivariate analysis revealed that diabetic neuropathy, but not HbA1c, significantly predicted LUT symptoms in women with T2D after adjustment for age, body mass index (BMI) and hypertension. However, HbA1c was associated with an increased risk of developing clinically significant PVR. Our findings do not support significant associations between glycemic control and LUT symptoms in women with T2D. However, women with poor glycemic control are more likely to develop urinary retention than women with proper glycemic control. Clinicians should, therefore, be aware of and educate patients about the association between urinary retention and glycemic control. Copyright © 2016 Elsevier Inc. All rights reserved.

Effect of oral intake of choline-stabilized orthosilicic acid on hair tensile strength and morphology in women with fine hair.

PubMed

Wickett, R R; Kossmann, E; Barel, A; Demeester, N; Clarys, P; Vanden Berghe, D; Calomme, M

2007-12-01

The appearance of hair plays an important role in people's overall physical appearance and self-perception. Silicon (Si) has been suggested to have a role in the formation of connective tissue and is present at 1-10 ppm in hair. Choline-stabilized orthosilicic acid ("ch-OSA") is a bioavailable form of silicon which was found to improve skin microrelief and skin mechanical properties in women with photoaged skin. The effect of ch-OSA on hair was investigated in a randomized, double blind, placebo-controlled study. Forty-eight women with fine hair were given 10 mg Si/day in the form of ch-OSA beadlets (n = 24) or a placebo (n = 24), orally for 9 months. Hair morphology and tensile properties were evaluated before and after treatment. Urinary silicon concentration increased significantly in the ch-OSA supplemented group but not in the placebo group. The elastic gradient decreased in both groups but the change was significantly smaller in the ch-OSA group (-4.52%) compared to placebo group (-11.9%). Break load changed significantly in the placebo group (-10.8%) but not in the ch-OSA supplemented group (-2.20%). Break stress and elastic modulus decreased in both groups but the change was smaller in the ch-OSA group. The cross sectional area increased significantly after 9 months compared to baseline in ch-OSA supplemented subjects but not in the placebo group. The change in urinary silicon excretion was significantly correlated with the change in cross sectional area. Oral intake of ch-OSA had a positive effect on tensile strength including elasticity and break load and resulted in thicker hair.

Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scarangella, Adriana; Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania; Reitano, Riccardo

2015-07-27

The process of energy transfer (ET) between optically active ions has been widely studied to improve the optical efficiency of a system for different applications, from lighting and photovoltaics to silicon microphotonics. In this work, we report the influence of Bi on the Er optical emission in erbium-yttrium oxide thin films synthesized by magnetron co-sputtering. We demonstrate that this host permits to well dissolve Er and Bi ions, avoiding their clustering, and thus to stabilize the optically active Er{sup 3+} and Bi{sup 3+} valence states. In addition, we establish the ET occurrence from Bi{sup 3+} to Er{sup 3+} by themore » observed Bi{sup 3+} PL emission decrease and the simultaneous Er{sup 3+} photoluminescence (PL) emission increase. This was further confirmed by the coincidence of the Er{sup 3+} and Bi{sup 3+} excitation bands, analyzed by PL excitation spectroscopy. By increasing the Bi content of two orders of magnitude inside the host, though the occurrence of Bi-Bi interactions becomes deleterious for Bi{sup 3+} optical efficiency, the ET process between Bi{sup 3+} and Er{sup 3+} is still prevalent. We estimate ET efficiency of 70% for the optimized Bi:Er ratio equal to 1:3. Moreover, we have demonstrated to enhance the Er{sup 3+} effective excitation cross section by more than three orders of magnitude with respect to the direct one, estimating a value of 5.3 × 10{sup −18} cm{sup 2}, similar to the expected Bi{sup 3+} excitation cross section. This value is one of the highest obtained for Er in Si compatible hosts. These results make this material very promising as an efficient emitter for Si-compatible photonics devices.« less

Type D personality is a risk factor for psychosomatic symptoms and musculoskeletal pain among adolescents: a cross-sectional study of a large population-based cohort of Swedish adolescents

PubMed Central

2013-01-01

Background Type D personality, or the “distressed personality”, is a psychosocial factor associated with negative health outcomes, although its impact in younger populations is unclear. The purpose of this study was to investigate the prevalence of Type D personality and the associations between Type D personality and psychosomatic symptoms and musculoskeletal pain among adolescences. Methods A population-based, self-reported cross-sectional study conducted in Västmanland, Sweden with a cohort of 5012 students in the age between 15–18 years old. The participants completed the anonymous questionnaire Survey of Adolescent Life in Västmanland 2008 during class hour. Psychosomatic symptoms and musculoskeletal pain were measured through index measuring the presence of symptoms and how common they were. DS14 and its two component subscales of negative affectivity (NA) and social inhibition (SI) were measured as well. Results There was a difference depending on sex, where 10.4% among boys and 14.6% among girls (p = < 0.001) were defined as Type D personality. Boys and girls with a Type D personality had an approximately 2-fold increased odds of musculoskeletal pain and a 5-fold increased odds of psychosomatic symptoms. The subscale NA explained most of the relationship between Type D personality and psychosomatic symptoms and musculoskeletal pain. No interaction effect of NA and SI was found. Conclusions There was a strong association between Type D personality and both psychosomatic symptoms and musculoskeletal pain where adolescent with a type D personality reported more symptoms. The present study contributes to the mapping of the influence of Type D on psychosomatic symptoms and musculoskeletal pain among adolescents. PMID:23336535

Collisional radiative model for Ar-O2 mixture plasma with fully relativistic fine structure cross sections

NASA Astrophysics Data System (ADS)

Priti, Gangwar, Reetesh Kumar; Srivastava, Rajesh

2018-04-01

A collisional radiative (C-R) model has been developed to diagnose the rf generated Ar-O2 (0%-5%) mixture plasma at low temperatures. Since in such plasmas the most dominant process is an electron impact excitation process, we considered several electron impact fine structure transitions in an argon atom from its ground as well as excited states. The cross-sections for these transitions have been obtained using the reliable fully relativistic distorted wave theory. Processes which account for the coupling of argon with the oxygen molecules have been further added to the model. We couple our model to the optical spectroscopic measurements reported by Jogi et al. [J. Phys. D: Appl. Phys. 47, 335206 (2014)]. The plasma parameters, viz. the electron density (ne) and the electron temperature (Te) as a function of O2 concentration have been obtained using thirteen intense emission lines out of 3p54p → 3p54s transitions observed in their spectroscopic measurements. It is found that as the content of O2 in Ar increases from 0%-5%, Te increases in the range 0.85-1.7 eV, while the electron density decreases from 2.76 × 1012-2.34 × 1011 cm-3. The Ar-3p54s (1si) fine-structure level populations at our extracted plasma parameters are found to be in very good agreement with those obtained from the measurements. Furthermore, we have estimated the individual contributions coming from the ground state, 1si manifolds and cascade contributions to the population of the radiating Ar-3p54p (2pi) states as a function of a trace amount of O2. Such information is very useful to understand the importance of various processes occurring in the plasma.

Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

NASA Astrophysics Data System (ADS)

Gunasekera, K.; Boolchand, P.; Micoulaut, M.

2014-04-01

Amorphous GexSixTe1-2x glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions xc1=7.5% and

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

NASA Astrophysics Data System (ADS)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Near-barrier Fusion Evaporation and Fission of 28Si+174Yb and 32S+170Er

NASA Astrophysics Data System (ADS)

Wang, Dongxi; Lin, Chengjian; Jia, Huiming; Ma, Nanru; Sun, Lijie; Xu, Xinxing; Yang, Lei; Yang, Feng; Zhang, Huanqiao; Bao, Pengfei

2017-11-01

Fusion evaporation residues and fission fragments have been measured, respectively, at energies around the Coulomb barrier for the 28Si+174Yb and 32S+170Er systems forming the same compound nucleus 202Po. The excitation function of fusion evaporation, fission as well as capture reactions were deduced. Coupled-channels analyses reveal that couplings to the deformations of targets and the two-phonon states of projectiles contribute much to the enhancement of capture cross sections at sub-barrier energies. The mass and total kinetic energy of fission fragments were deduced by the time-difference method assuming full momentum transfer in a two-body kinematics. The mass-energy and mass-angle distributions were obtained and no obvious quasi-fission components were observed in this bombarding energy range. Further, mass distributions of fission fragments were fitted to extract their widths. Results show that the mass widths decrease monotonically with decreasing energy, but might start to increase when Ec.m./VB < 0.95 for both systems.

Fabrication of high aspect grating using bonded substrate for X-ray refraction imaging by Talbot-Lau interferometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tada, Takuji; Murakoshi, Dai; Ishii, Hiroyasu

2012-07-31

In order to improve the image quality of X-ray refraction images using a Talbot-Lau interferometer, we have been attempting to fabricate gratings with high aspect ratio. In our attempt, deep grooves of grating structure were channeled on a Si substrate bonded by Au diffusion bonding method, and the grooves were filled with Au where the Au layer used for the bonding Si substrate was acting as a seed layer of Au electroplating. From the results of a visibility measurement and a cross sectional SEM image, it was confirmed that the grooves with a pitch of 5.8 {mu}m and a depthmore » of 100 {mu}m could be successfully filled with Au over a large area of 72 Multiplication-Sign 80 mm{sup 2}. Using this grating, the X-ray refraction images for the cartilage of a knee joint of a livestock pig could be obtained where SPS method was employed for the single-shot image acquisition.« less

Influence of etching current density on microstructural, optical and electrical properties of porous silicon (PS):n-Si heterostructure

NASA Astrophysics Data System (ADS)

Das, M.; Nath, P.; Sarkar, D.

2016-02-01

In this article effect of etching current density (J) on the microstructural, optical and electrical properties of photoelectrochemically prepared heterostructure is reported. Prepared samples are characterized by FESEM, XRD, UV-Visible, Raman and photoluminescence (PL) spectra and current-voltage (I-V) characteristics. FESEM shows presence of mixture of randomly distributed meso- and micro-pores. Porous layer thickness determined by cross section view of SEM is proportional to J. XRD shows crystalline nature but gradually extent of crystallinity decreases with increasing J. Raman spectra show large red-shift and asymmetric broadening with respect to crystalline silicon (c-Si). UV-visible reflectance and PL show blue shift in peaks with increasing J. The I-V characteristics are analyzed by the conventional thermionic emission (TE) model and Cheung's model to estimate the barrier height (φb), ideality factor (n) and series resistance (Rs) for comparison between the two models. The latter model is found to fit better.

Semimicroscopic analysis of 6Li+28Si elastic scattering at 76 to 318 MeV

NASA Astrophysics Data System (ADS)

Hassanain, M. A.; Anwar, M.; Behairy, Kassem O.

2018-04-01

Using the α-cluster structure of colliding nuclei, the elastic scattering of 6Li+28Si at energies from 76 to 318 MeV has been investigated by the use of the real folding cluster approach. The results of the cluster analysis are compared with those obtained by the CDM3Y6 effective density- and energy-dependent nucleon-nucleon (NN) interaction based upon G -matrix elements of the M3Y-Paris potential. A Woods-Saxon (WS) form was used for the imaginary potential. For all energies and derived potentials, the diffraction region was well reproduced, except at Elab=135 and 154 MeV at large angle. These results suggest that the addition of the surface (DWS) imaginary potential term to the volume imaginary potential is essential for a correct description of the refractive structure of the 6Li elastic scattering distribution at these energies. The energy dependence of the total reaction cross sections and that of the real and imaginary volume integrals is also discussed.

Multilevel acceleration of scattering-source iterations with application to electron transport

DOE PAGES

Drumm, Clif; Fan, Wesley

2017-08-18

Acceleration/preconditioning strategies available in the SCEPTRE radiation transport code are described. A flexible transport synthetic acceleration (TSA) algorithm that uses a low-order discrete-ordinates (S N) or spherical-harmonics (P N) solve to accelerate convergence of a high-order S N source-iteration (SI) solve is described. Convergence of the low-order solves can be further accelerated by applying off-the-shelf incomplete-factorization or algebraic-multigrid methods. Also available is an algorithm that uses a generalized minimum residual (GMRES) iterative method rather than SI for convergence, using a parallel sweep-based solver to build up a Krylov subspace. TSA has been applied as a preconditioner to accelerate the convergencemore » of the GMRES iterations. The methods are applied to several problems involving electron transport and problems with artificial cross sections with large scattering ratios. These methods were compared and evaluated by considering material discontinuities and scattering anisotropy. Observed accelerations obtained are highly problem dependent, but speedup factors around 10 have been observed in typical applications.« less

Angular momentum dependence in 22 MeV $alpha$-particle elastic scattering by light nuclei

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lega, J.; Macq, P.C.

1974-01-01

Elastic scattering of 22 MeV alpha -particles by /sup 23, /sup 24,15,26/ Mg, /sup 27/Al and /sup 28/Si was measured between 24 and 174 deg lab. Partial angular distributions, from 120 to 174 deg , were also measured at incident energies of 18.4 and 20.7 MeV for /sup 24/Mg, and 18.9 and 20.5 MeV for /sup 28/ Si. The most striking feature of the data is the large-angle behavior spin-zero nuclei display more pronounced backward oscillations and the cross section rises more steeply towards 180 deg for 4n nuclei than for the others. Optical Model analyses with an l-dependent absorptionmore » and a minimum of free parameters are used to describe the general trend of the data for A = 23 to 28 nuclei at different energies; a spinorbit coupling term, 2.75 MeV deep, is added to describe the /sup 23/Na scattering data. (auth)« less

Characterization of laser induced damage of HR coatings with picosecond pulses

NASA Astrophysics Data System (ADS)

Li, Cheng; Zhao, Yuan'an; Cui, Yun; Wang, Yueliang; Peng, Xiaocong; Shan, Chong; Zhu, Meiping; Wang, Jianguo; Shao, Jianda

2017-11-01

The effect of protective layer on the picosecond laser-induced damage behaviors of HfO2/SiO2 high-reflective (HR) coatings are explored. Two kinds of 1064nm HR coatings with and without protective layer are deposited by electron beam evaporation. Laser-induced damage tests are conducted with 1064nm, 30ps S-polarized and P-polarized pulses with different angle of incidence (AOI) to make the electric fields intensity in the HR coatings discrepantly. Damage morphology and cross section of damage sites were characterized by scanning electron microscope (SEM) and focused ion beam (FIB), respectively. It is found that SiO2 protective layer have a certain degree of improvement on laser induced damage threshold (LIDT) for every AOIs. The onset damage initiated very near to the Max peak of e-field, after which forms ripple-like pits. The damage morphology presents as layer delamination at high fluence. The Laser damage resistance is correspond with the maximum E-intensity in the coating stacks.

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned Si substrate

NASA Astrophysics Data System (ADS)

Chiu, Ching-Hsueh; Lin, Chien-Chung; Deng, Dongmei; Kuo, Hao-Chung; Lau, Kei-May

2011-10-01

We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.

Sporophytic self-incompatibility in Senecio squalidus (Asteraceae): S allele dominance interactions and modifiers of cross-compatibility and selfing rates

PubMed Central

Brennan, A C; Tabah, D A; Harris, S A; Hiscock, S J

2011-01-01

Understanding genetic mechanisms of self-incompatibility (SI) and how they evolve is central to understanding the mating behaviour of most outbreeding angiosperms. Sporophytic SI (SSI) is controlled by a single multi-allelic locus, S, which is expressed in the diploid (sporophyte) plant to determine the SI phenotype of its haploid (gametophyte) pollen. This allows complex patterns of independent S allele dominance interactions in male (pollen) and female (pistil) reproductive tissues. Senecio squalidus is a useful model for studying the genetic regulation and evolution of SSI because of its population history as an alien invasive species in the UK. S. squalidus maintains a small number of S alleles (7–11) with a high frequency of dominance interactions. Some S. squalidus individuals also show partial selfing and/or greater levels of cross-compatibility than expected under SSI. We previously speculated that these might be adaptations to invasiveness. Here we describe a detailed characterization of the regulation of SSI in S. squalidus. Controlled crosses were used to determine the S allele dominance hierarchy of six S alleles and effects of modifiers on cross-compatibility and partial selfing. Complex dominance interactions among S alleles were found with at least three levels of dominance and tissue-specific codominance. Evidence for S gene modifiers that increase selfing and/or cross-compatibility was also found. These empirical findings are discussed in the context of theoretical predictions for maintenance of S allele dominance interactions, and the role of modifier loci in the evolution of SI. PMID:20372180

Sporophytic self-incompatibility in Senecio squalidus (Asteraceae): S allele dominance interactions and modifiers of cross-compatibility and selfing rates.

PubMed

Brennan, A C; Tabah, D A; Harris, S A; Hiscock, S J

2011-01-01

Understanding genetic mechanisms of self-incompatibility (SI) and how they evolve is central to understanding the mating behaviour of most outbreeding angiosperms. Sporophytic SI (SSI) is controlled by a single multi-allelic locus, S, which is expressed in the diploid (sporophyte) plant to determine the SI phenotype of its haploid (gametophyte) pollen. This allows complex patterns of independent S allele dominance interactions in male (pollen) and female (pistil) reproductive tissues. Senecio squalidus is a useful model for studying the genetic regulation and evolution of SSI because of its population history as an alien invasive species in the UK. S. squalidus maintains a small number of S alleles (7-11) with a high frequency of dominance interactions. Some S. squalidus individuals also show partial selfing and/or greater levels of cross-compatibility than expected under SSI. We previously speculated that these might be adaptations to invasiveness. Here we describe a detailed characterization of the regulation of SSI in S. squalidus. Controlled crosses were used to determine the S allele dominance hierarchy of six S alleles and effects of modifiers on cross-compatibility and partial selfing. Complex dominance interactions among S alleles were found with at least three levels of dominance and tissue-specific codominance. Evidence for S gene modifiers that increase selfing and/or cross-compatibility was also found. These empirical findings are discussed in the context of theoretical predictions for maintenance of S allele dominance interactions, and the role of modifier loci in the evolution of SI.

Transitions between self-compatibility and self-incompatibility and the evolution of reproductive isolation in the large and diverse tropical genus Dendrobium (Orchidaceae)

PubMed Central

Pinheiro, Fabio; Cafasso, Donata; Cozzolino, Salvatore; Scopece, Giovanni

2015-01-01

Background and Aims The evolution of interspecific reproductive barriers is crucial to understanding species evolution. This study examines the contribution of transitions between self-compatibility (SC) and self-incompatibility (SI) and genetic divergence in the evolution of reproductive barriers in Dendrobium, one of the largest orchid genera. Specifically, it investigates the evolution of pre- and postzygotic isolation and the effects of transitions between compatibility states on interspecific reproductive isolation within the genus. Methods The role of SC and SI changes in reproductive compatibility among species was examined using fruit set and seed viability data available in the literature from 86 species and ∼2500 hand pollinations. The evolution of SC and SI in Dendrobium species was investigated within a phylogenetic framework using internal transcribed spacer sequences available in GenBank. Key Results Based on data from crossing experiments, estimations of genetic distance and the results of a literature survey, it was found that changes in SC and SI significantly influenced the compatibility between species in interspecific crosses. The number of fruits produced was significantly higher in crosses in which self-incompatible species acted as pollen donor for self-compatible species, following the SI × SC rule. Maximum likelihood and Bayesian tests did not reject transitions from SI to SC and from SC to SI across the Dendrobium phylogeny. In addition, postzygotic isolation (embryo mortality) was found to evolve gradually with genetic divergence, in agreement with previous results observed for other plant species, including orchids. Conclusions Transitions between SC and SI and the gradual accumulation of genetic incompatibilities affecting postzygotic isolation are important mechanisms preventing gene flow among Dendrobium species, and may constitute important evolutionary processes contributing to the high levels of species diversity in this tropical orchid group. PMID:25953040

Transitions between self-compatibility and self-incompatibility and the evolution of reproductive isolation in the large and diverse tropical genus Dendrobium (Orchidaceae).

PubMed

Pinheiro, Fabio; Cafasso, Donata; Cozzolino, Salvatore; Scopece, Giovanni

2015-09-01

The evolution of interspecific reproductive barriers is crucial to understanding species evolution. This study examines the contribution of transitions between self-compatibility (SC) and self-incompatibility (SI) and genetic divergence in the evolution of reproductive barriers in Dendrobium, one of the largest orchid genera. Specifically, it investigates the evolution of pre- and postzygotic isolation and the effects of transitions between compatibility states on interspecific reproductive isolation within the genus. The role of SC and SI changes in reproductive compatibility among species was examined using fruit set and seed viability data available in the literature from 86 species and ∼2500 hand pollinations. The evolution of SC and SI in Dendrobium species was investigated within a phylogenetic framework using internal transcribed spacer sequences available in GenBank. Based on data from crossing experiments, estimations of genetic distance and the results of a literature survey, it was found that changes in SC and SI significantly influenced the compatibility between species in interspecific crosses. The number of fruits produced was significantly higher in crosses in which self-incompatible species acted as pollen donor for self-compatible species, following the SI × SC rule. Maximum likelihood and Bayesian tests did not reject transitions from SI to SC and from SC to SI across the Dendrobium phylogeny. In addition, postzygotic isolation (embryo mortality) was found to evolve gradually with genetic divergence, in agreement with previous results observed for other plant species, including orchids. Transitions between SC and SI and the gradual accumulation of genetic incompatibilities affecting postzygotic isolation are important mechanisms preventing gene flow among Dendrobium species, and may constitute important evolutionary processes contributing to the high levels of species diversity in this tropical orchid group. © The Author 2015. Published by Oxford University Press on behalf of the Annals of Botany Company. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

NASA Astrophysics Data System (ADS)

Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

2018-02-01

Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm‑2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced foreign body response. The technique is promising and has potential for clinical translation and large scale manufacturing.

Effect of Slow Wave Sleep Disruption on Metabolic Parameters in Adolescents.

PubMed

Shaw, Natalie D; McHill, Andrew W; Schiavon, Michele; Kangarloo, Tairmae; Mankowski, Piotr W; Cobelli, Claudio; Klerman, Elizabeth B; Hall, Janet E

2016-08-01

Cross-sectional studies report a correlation between slow wave sleep (SWS) duration and insulin sensitivity (SI) in children and adults. Suppression of SWS causes insulin resistance in adults but effects in children are unknown. This study was designed to determine the effect of SWS fragmentation on SI in children. Fourteen pubertal children (11.3-14.1 y, body mass index 29(th) to 97(th) percentile) were randomized to sleep studies and mixed meal (MM) tolerance tests with and without SWS disruption. Beta-cell responsiveness (Φ) and SI were determined using oral minimal modeling. During the disruption night, auditory stimuli (68.1 ± 10.7/night; mean ± standard error) decreased SWS by 40.0 ± 8.0%. SWS fragmentation did not affect fasting glucose (non-disrupted 76.9 ± 2.3 versus disrupted 80.6 ± 2.1 mg/dL), insulin (9.2 ± 1.6 versus 10.4 ± 2.0 μIU/mL), or C-peptide (1.9 ± 0.2 versus 1.9 ± 0.1 ng/mL) levels and did not impair SI (12.9 ± 2.3 versus 10.1 ± 1.6 10(-4) dL/kg/min per μIU/mL) or Φ (73.4 ± 7.8 versus 74.4 ± 8.4 10(-9) min(-1)) to a MM challenge. Only the subjects in the most insulin-sensitive tertile demonstrated a consistent decrease in SI after SWS disruption. Pubertal children across a range of body mass indices may be resistant to the adverse metabolic effects of acute SWS disruption. Only those subjects with high SI (i.e., having the greatest "metabolic reserve") demonstrated a consistent decrease in SI. These results suggest that adolescents may have a unique ability to adapt to metabolic stressors, such as acute SWS disruption, to maintain euglycemia. Additional studies are necessary to confirm that this resiliency is maintained in settings of chronic SWS disruption. © 2016 Associated Professional Sleep Societies, LLC.

A study to compute integrated dpa for neutron and ion irradiation environments using SRIM-2013

NASA Astrophysics Data System (ADS)

Saha, Uttiyoarnab; Devan, K.; Ganesan, S.

2018-05-01

Displacements per atom (dpa), estimated based on the standard Norgett-Robinson-Torrens (NRT) model, is used for assessing radiation damage effects in fast reactor materials. A computer code CRaD has been indigenously developed towards establishing the infrastructure to perform improved radiation damage studies in Indian fast reactors. We propose a method for computing multigroup neutron NRT dpa cross sections based on SRIM-2013 simulations. In this method, for each neutron group, the recoil or primary knock-on atom (PKA) spectrum and its average energy are first estimated with CRaD code from ENDF/B-VII.1. This average PKA energy forms the input for SRIM simulation, wherein the recoil atom is taken as the incoming ion on the target. The NRT-dpa cross section of iron computed with "Quick" Kinchin-Pease (K-P) option of SRIM-2013 is found to agree within 10% with the standard NRT-dpa values, if damage energy from SRIM simulation is used. SRIM-2013 NRT-dpa cross sections applied to estimate the integrated dpa for Fe, Cr and Ni are in good agreement with established computer codes and data. A similar study carried out for polyatomic material, SiC, shows encouraging results. In this case, it is observed that the NRT approach with average lattice displacement energy of 25 eV coupled with the damage energies from the K-P option of SRIM-2013 gives reliable displacement cross sections and integrated dpa for various reactor spectra. The source term of neutron damage can be equivalently determined in the units of dpa by simulating self-ion bombardment. This shows that the information of primary recoils obtained from CRaD can be reliably applied to estimate the integrated dpa and damage assessment studies in accelerator-based self-ion irradiation experiments of structural materials. This study would help to advance the investigation of possible correlations between the damages induced by ions and reactor neutrons.

Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

PubMed

Yoon, Changjoon; Jeon, Youngin; Yun, Junggwon; Kim, Sangsig

2012-01-01

Arrayed Si nanowire (NW)-based nano-floating gate memory (NFGM) devices with Pt nanoparticles (NPs) embedded in Al2O3 gate layers are successfully constructed on flexible plastics by top-down approaches. Ten arrayed Si NW-based NFGM devices are positioned on the first level. Cross-linked poly-4-vinylphenol (PVP) layers are spin-coated on them as isolation layers between the first and second level, and another ten devices are stacked on the cross-linked PVP isolation layers. The electrical characteristics of the representative Si NW-based NFGM devices on the first and second levels exhibit threshold voltage shifts, indicating the trapping and detrapping of electrons in their NPs nodes. They have an average threshold voltage shift of 2.5 V with good retention times of more than 5 x 10(4) s. Moreover, most of the devices successfully retain their electrical characteristics after about one thousand bending cycles. These well-arrayed and stacked Si NW-based NFGM devices demonstrate the potential of nanowire-based devices for large-scale integration.

Probing the fusion of neutron-rich nuclei with re-accelerated radioactive beams

DOE PAGES

Vadas, J.; Singh, Varinderjit; Wiggins, B. B.; ...

2018-03-27

Here, we report the first measurement of the fusion excitation functions for 39,47K + 28Si at near-barrier energies. Evaporation residues resulting from the fusion process were identified by direct measurement of their energy and time-of-flight with high geometric efficiency. At the lowest incident energy, the cross section measured for the neutron-rich 47K-induced reaction is ≈6 times larger than that of the β-stable system. This experimental approach, both in measurement and in analysis, demonstrates how to efficiently measure fusion with low-intensity re-accelerated radioactive beams, establishing the framework for future studies.

Probing the fusion of neutron-rich nuclei with re-accelerated radioactive beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vadas, J.; Singh, Varinderjit; Wiggins, B. B.

Here, we report the first measurement of the fusion excitation functions for 39,47K + 28Si at near-barrier energies. Evaporation residues resulting from the fusion process were identified by direct measurement of their energy and time-of-flight with high geometric efficiency. At the lowest incident energy, the cross section measured for the neutron-rich 47K-induced reaction is ≈6 times larger than that of the β-stable system. This experimental approach, both in measurement and in analysis, demonstrates how to efficiently measure fusion with low-intensity re-accelerated radioactive beams, establishing the framework for future studies.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

PubMed

Zimmler, Mariano A; Stichtenoth, Daniel; Ronning, Carsten; Yi, Wei; Narayanamurti, Venkatesh; Voss, Tobias; Capasso, Federico

2008-06-01

We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.

Synergistic Effects of Temperature, Oxidation and Stress Level on Fatigue Damage Evolution and Lifetime Prediction of Cross-Ply SiC/CAS Ceramic-Matrix Composites Through Hysteresis-Based Parameters

NASA Astrophysics Data System (ADS)

Li, Longbiao

2017-12-01

The damage development and cyclic fatigue lifetime of cross-ply SiC/CAS ceramic-matrix composites have been investigated at different testing temperatures in air atmosphere. The relationships between the fatigue hysteresis-based damage parameters, i.e., fatigue hysteresis dissipated energy, fatigue hysteresis modulus and fatigue peak strain and the damage mechanisms of matrix multicracking, fiber/matrix interface debonding, interface sliding and fibers failure, have been established. With the increase in the cycle number, the evolution of the fatigue hysteresis modulus, fatigue peak strain and fatigue hysteresis dissipated energy depends upon the fatigue peak stress levels, interface and fibers oxidation and testing temperature. The fatigue life S-N curves of cross-ply SiC/CAS composite at room and elevated temperatures have been predicted, and the fatigue limit stresses at room temperature, 750 and 850 °C, are 50, 36 and 30% of the tensile strength, respectively.

He-irradiation effects on glass-ceramics for joining of SiC-based materials

NASA Astrophysics Data System (ADS)

Gozzelino, L.; Casalegno, V.; Ghigo, G.; Moskalewicz, T.; Czyrska-Filemonowicz, A.; Ferraris, M.

2016-04-01

CaO-Al2O3 (CA) and SiO2-Al2O3-Y2O3 (SAY) glass-ceramics are promising candidates for SiC/SiC indirect joints. In view of their use in locations where high radiation level is expected (i.e. fusion plants) it is important to investigate how radiation-induced damage can modify the material microstructure. To this aim, pellets of both types were irradiated with 5.5 MeV 4He+ ions at an average temperature of 75 °C up to a fluence of almost 2.3·1018 cm-2. This produces a displacement defect density that increases with depth and reaches a value of about 40 displacements per atom in the ion implantation region, where the He-gas reaches a concentration of several thousands of atomic parts per million. X-ray diffractometry and scanning electron microscopy showed no change in the microstructure and in the morphology of the pellet surface. Moreover, a transmission electron microscopy investigation on cross-section lamellas revealed the occurrence of structural defects and agglomerates of He-bubbles in the implantation region for the CA sample and a more homogeneous He-bubble distribution in the SAY pellet, even outside the implantation layer. In addition, no amorphization was found in both samples, even in correspondence to the He implantation zone. The radiation damage induced only occasional micro-cracks, mainly located at grain boundaries (CA) or within the grains (SAY).

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

NASA Astrophysics Data System (ADS)

Liu, Yu-Zhu; Li, Bing-Sheng; Zhang, Li

2017-05-01

Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The < 0001> -oriented 6H-SiC wafers are implanted with 15 keV helium ions at a dose of 1× 1017 cm-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473 K for 30 min. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy (XTEM) analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273 K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealing abides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914+0.236 eV. Supported by the National Natural Science Foundation of China under Grant No 11475229.

Effect of CeO2 and Y2O3 on microstructure, bioactivity and degradability of laser cladding CaO-SiO2 coating on titanium alloy.

PubMed

Li, H C; Wang, D G; Chen, C Z; Weng, F

2015-03-01

To solve the lack of strength of bulk biomaterials for load-bearing applications and improve the bioactivity of titanium alloy (Ti-6Al-4V), CaO-SiO2 coatings on titanium alloy were fabricated by laser cladding technique. The effect of CeO2 and Y2O3 on microstructure and properties of laser cladding coating was analyzed. The cross-section microstructure of ceramic layer from top to bottom gradually changes from cellular-dendrite structure to compact cellular crystal. The addition of CeO2 or Y2O3 refines the microstructure of the ceramic layer in the upper and middle regions. The refining effect on the grain is related to the kinds of additives and their content. The coating is mainly composed of CaTiO3, CaO, α-Ca2(SiO4), SiO2 and TiO2. Y2O3 inhibits the formation of CaO. After soaking in simulated body fluid (SBF), the calcium phosphate layer is formed on the coating surface, indicating the coating has bioactivity. After soaking in Tris-HCl solution, the samples doped with CeO2 or Y2O3 present a lower weight loss, indicating the addition of CeO2 or Y2O3 improves the degradability of laser cladding sample. Copyright © 2015 Elsevier B.V. All rights reserved.

Latino suicidal adolescent psychosocial service utilization: The role of mood fluctuations and inattention.

PubMed

Alonzo, Dana; Conway, Anne; Modrek, Anahid S

2016-01-15

Little is known about the specific factors related to whether or not Latino adolescents with suicide ideation (SI) will seek services. Utilizing Andersen's Behavior Model of Health Services Use (2008) the goal of this study is to identify the factors related to utilization of mental health services by Latino adolescents with SI to inform and improve suicide prevention efforts. Data from Wave 1 of the National Longitudinal Study of Adolescent Health was examined. Predispositional (gender, age), enabling/disabling (income, lack of insurance, difficulty obtaining medical care), and need (depressed mood, suicide attempt, perceived health, impulsivity, mood fluctuations, difficulties with attention, etc.) variables were examined via logistic regression as potential correlates of mental health service utilization. Twenty-eight percent of the Latino adolescents with suicidal ideation (SI) in our sample received mental health services. Need factors such as daily mood fluctuations within the past 12 months (OR=4.78) and frequent difficulty focusing attention within the past week (OR=4.96), but not impulsivity, were associated with an increased likelihood of receiving mental health services. No additional associations were observed. The current study is based on cross-sectional data. Therefore, statements about causality cannot be made. These findings suggest that emotion regulation (e.g., daily mood fluctuations) and neurocognitive factors (e.g., difficulty with focusing attention) may be important factors to consider in the clinical assessment of Latino adolescents with SI. Copyright © 2015. Published by Elsevier B.V.

Oxidation of Ultra High Temperature Ceramics in Water Vapor

NASA Technical Reports Server (NTRS)

Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

2004-01-01

Ultra High Temperature Ceramics (UHTCs) including HfB2 + 20v/0 SiC (HS), ZrB2 + 20v/0 SiC (ZS), and ZrB2 + 30v/0 C + 14v/0 SiC (ZCS) have been investigated for use as potential aeropropulsion engine materials. These materials were oxidized in water vapor (90 percent) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 h at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline for comparison. Weight change, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results are compared with tests ran in a stagnant air furnace at temperatures of 1327 C for 100 min, and with high pressure burner rig (HPBR) results at 1100 and 1300 C at 6 atm for 50 h. Low velocity water vapor does not make a significant contribution to the oxidation rates of UHTCs when compared to stagnant air. The parabolic rate constants at 1300 C, range from 0.29 to 16.0 mg(sup 2)cm(sup 4)/h for HS and ZCS, respectively, with ZS results between these two values. Comparison of results for UHTCs tested in the furnace in 90 percent water vapor with HPBR results was difficult due to significant sample loss caused by spallation in the increased velocity of the HPBR. Total recession measurements are also reported for the two test environments.

The influence of dairy consumption and physical activity on ultrasound bone measurements in Flemish children.

PubMed

De Smet, Stephanie; Michels, Nathalie; Polfliet, Carolien; D'Haese, Sara; Roggen, Inge; De Henauw, Stefaan; Sioen, Isabelle

2015-03-01

The study's aim was to analyse whether children's bone status, assessed by calcaneal ultrasound measurements, is influenced by dairy consumption and objectively measured physical activity (PA). Moreover, the interaction between dairy consumption and PA on bone mass was studied. Participants of this cross-sectional study were 306 Flemish children (6-12 years). Body composition was measured with air displacement plethysmography (BodPod), dairy consumption with a Food Frequency Questionnaire, PA with an accelerometer (only in 234 of the 306 children) and bone mass with quantitative ultrasound, quantifying speed of sound (SOS), broadband ultrasound attenuation (BUA) and Stiffness Index (SI). Regression analyses were used to study the associations between dairy consumption, PA, SOS, BUA and SI. Total dairy consumption and non-cheese dairy consumption were positively associated with SOS and SI, but no significant association could be demonstrated with BUA. In contrast, milk consumption, disregarding other dairy products, had no significant effect on calcaneal bone measurements. PA [vigorous PA, moderate to vigorous physical activity (MVPA) and counts per minute] was positively associated and sedentary time was negatively associated with BUA and SI, but no significant influence on SOS could be detected. Dairy consumption and PA (sedentary time and MVPA) did not show any interaction influencing bone measurements. In conclusion, even at young age, PA and dairy consumption positively influence bone mass. Promoting PA and dairy consumption in young children may, therefore, maximize peak bone mass, an important protective factor against osteoporosis later in life.

Nuclear Data Sheets for A = 34

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nica N.; Nica,N.; Singh,B.

2012-07-01

Nuclear spectroscopic information for experimentally investigated nuclides of mass 34 (Ne, Na, Mg, Al, Si, P, S, Cl, Ar, K, Ca) has been evaluated. The principal sources of the Adopted Levels presented for nuclides close to the stability line are Endt's evaluations (1990En08, 1978En02). The data sets for reactions and decays, including all available gamma-ray data, are based mostly on the original literature. There are no data available for the excited states in {sup 34}Ne and {sup 34}Na. The existence of the {sup 34}K and {sup 34}Ca nuclides has been searched and reported in a secondary publication but no evidencemore » was found for their detection. Both nuclides are possible candidates for one or two-proton emission. Only upper limits of half-lives have been proposed based on expected cross sections. Decay schemes for the {beta} decays of {sup 34}Ne, {sup 34}Na, {sup 34}Mg, and {sup 34}Si are not known. Very little information is available for {beta}-delayed neutron decays of {sup 35}Na, {sup 35}Mg and {sup 35}Si which lead to population of levels in A = 34 nuclides. Neutron-rich nuclides in this mass region are relevant to 'island of inversion'.« less

Athermal synchronization of laser source with WDM filter in a silicon photonics platform

PubMed Central

Li, Nanxi; Purnawirman; Salih Magden, E.; Poulton, Christopher V.; Ruocco, Alfonso; Singh, Neetesh; Byrd, Matthew J.; Bradley, Jonathan D. B.; Leake, Gerald; Watts, Michael R.

2017-01-01

In an optical interconnect circuit, microring resonators (MRRs) are commonly used in wavelength division multiplexing systems. To make the MRR and laser synchronized, the resonance wavelength of the MRR needs to be thermally controlled, and the power consumption becomes significant with a high-channel count. Here, we demonstrate an athermally synchronized rare-earth-doped laser and MRR. The laser comprises a Si3N4 based cavity covered with erbium-doped Al2O3 to provide gain. The low thermo-optic coefficient of Al2O3 and Si3N4 and the comparable thermal shift of the effective index in the laser and microring cross-sections enable lasing and resonance wavelength synchronization over a wide range of temperatures. The power difference between matched and unmatched channels remains greater than 15 dB from 20 to 50 °C due to a synchronized wavelength shift of 0.02 nm/°C. The athermal synchronization approach reported here is not limited to microring filters but can be applied to any Si3N4 filter with integrated lasers using rare earth ion doped Al2O3 as a gain medium to achieve system-level temperature control free operation. PMID:28611487

Room Temperature Ion-Beam-Induced Recrystallization and Large Scale Nanopatterning.

PubMed

Satpati, Biswarup; Ghosh, Tanmay

2015-02-01

We have studied ion-induced effects in the near-surface region of two eutectic systems. Gold and Silver nanodots on Silicon (100) substrate were prepared by thermal evaporation under high vacuum condition at room temperature (RT) and irradiated with 1.5 MeV Au2+ ions at flux ~1.25 x 10(11) ions cm-2 s-1 also at RT. These samples were characterized using cross-sectional transmission electron microscopy (XTEM) and associated techniques. We have observed that gold act as catalysis in the recrystallization process of ion-beam-induced amorphous Si at room temperature and also large mass transport up to a distance of about 60 nm into the substrate. Mass transport is much beyond the size (~ 6-20 nm) of these Au nanodots. Ag nanoparticles with diameter 15-45 nm are half-way embedded into the Si substrate and does not stimulate in recrystallization. In case of Au nanoparticles upon ion irradiation, mixed phase formed only when the local composition and transient temperature during irradiation is sufficient to cause mixing in accordance with the Au-Si stable phase diagram. Spectroscopic imaging in the scanning TEM using spatially resolved electron energy loss spectroscopy provides one of the few ways to measure the real-space nanoscale mixing.

Atomic structures of B20 FeGe thin films grown on the Si(111) surface

NASA Astrophysics Data System (ADS)

Kim, Wondong; Noh, Seungkyun; Yoon, Jisoo; Kim, Young Heon; Lee, Inho; Kim, Jae-Sung; Hwang, Chanyong

We investigated the growth and atomic structures of FeGe thin films on the Si (111) surface by using scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). The 2 5nm- thick FeGe thin films were prepared on the clean Si(111) 7x7 surface by co-deposition of Fe and Ge from separated electron-beam evaporators. With direct deposition on the substrate at the temperature above 550 K, the surface of FeGe films was not smooth and consisted of coarse grains. By the combination of room-temperature annealing and post-annealing process around 800 K, the structure of FeGe thin films evolved into the well crystalized structures. Atom-resolved STM images revealed that there are at least four different surface terminations. We constructed atomic models for each surface terminations based on the bulk atomic arrangement of a B20 chiral structure and confirmed that the observed STM images are successfully reproduced by using computational simulations employing Vienna Ab Initio Simulation package (VASP) with a B20 chiral structure model. TEM cross-sectional images also support our atomic models by revealing clearly the characteristic zigzag features of B20 structures of FeGe(111) thin films.

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Hansson, G. V.; Ni, W.-X.

A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si{sub 0.6}Ge{sub 0.4} layer on Si(001) by using molecular beam epitaxy (MBE), with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of {approx}400 deg. C, followed by a 20 nm Si{sub 0.6}Ge{sub 0.4} layer grown at temperatures ranging from 50 to 550 deg. C. A significant relaxation increase together with a surface roughness decrease both by a factor of {approx}2, accompaniedmore » with the cross-hatch/cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si{sub 0.6}Ge{sub 0.4} layer that was grown at {approx}200 deg. C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si{sub 0.6}Ge{sub 0.4} layer.« less

Cooperative processing in primary somatosensory cortex and posterior parietal cortex during tactile working memory.

PubMed

Ku, Yixuan; Zhao, Di; Bodner, Mark; Zhou, Yong-Di

2015-08-01

In the present study, causal roles of both the primary somatosensory cortex (SI) and the posterior parietal cortex (PPC) were investigated in a tactile unimodal working memory (WM) task. Individual magnetic resonance imaging-based single-pulse transcranial magnetic stimulation (spTMS) was applied, respectively, to the left SI (ipsilateral to tactile stimuli), right SI (contralateral to tactile stimuli) and right PPC (contralateral to tactile stimuli), while human participants were performing a tactile-tactile unimodal delayed matching-to-sample task. The time points of spTMS were 300, 600 and 900 ms after the onset of the tactile sample stimulus (duration: 200 ms). Compared with ipsilateral SI, application of spTMS over either contralateral SI or contralateral PPC at those time points significantly impaired the accuracy of task performance. Meanwhile, the deterioration in accuracy did not vary with the stimulating time points. Together, these results indicate that the tactile information is processed cooperatively by SI and PPC in the same hemisphere, starting from the early delay of the tactile unimodal WM task. This pattern of processing of tactile information is different from the pattern in tactile-visual cross-modal WM. In a tactile-visual cross-modal WM task, SI and PPC contribute to the processing sequentially, suggesting a process of sensory information transfer during the early delay between modalities. © 2015 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

Quantum transport modelling of silicon nanobeams using heterogeneous computing scheme

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harb, M., E-mail: harbm@physics.mcgill.ca; Michaud-Rioux, V., E-mail: vincentm@physics.mcgill.ca; Guo, H., E-mail: guo@physics.mcgill.ca

We report the development of a powerful method for quantum transport calculations of nanowire/nanobeam structures with large cross sectional area. Our approach to quantum transport is based on Green's functions and tight-binding potentials. A linear algebraic formulation allows us to harness the massively parallel nature of Graphics Processing Units (GPUs) and our implementation is based on a heterogeneous parallel computing scheme with traditional processors and GPUs working together. Using our software tool, the electronic and quantum transport properties of silicon nanobeams with a realistic cross sectional area of ∼22.7 nm{sup 2} and a length of ∼81.5 nm—comprising 105 000 Si atoms and 24 000more » passivating H atoms in the scattering region—are investigated. The method also allows us to perform significant averaging over impurity configurations—all possible configurations were considered in the case of single impurities. Finally, the effect of the position and number of vacancy defects on the transport properties was considered. It is found that the configurations with the vacancies lying closer to the local density of states (LDOS) maxima have lower transmission functions than the configurations with the vacancies located at LDOS minima or far away from LDOS maxima, suggesting both a qualitative method to tune or estimate optimal impurity configurations as well as a physical picture that accounts for device variability. Finally, we provide performance benchmarks for structures as large as ∼42.5 nm{sup 2} cross section and ∼81.5 nm length.« less

Dorsolateral prefrontal cortex bridges bilateral primary somatosensory cortices during cross-modal working memory.

PubMed

Zhao, Di; Ku, Yixuan

2018-05-01

Neural activity in the dorsolateral prefrontal cortex (DLPFC) has been suggested to integrate information from distinct sensory areas. However, how the DLPFC interacts with the bilateral primary somatosensory cortices (SIs) in tactile-visual cross-modal working memory has not yet been established. In the present study, we applied single-pulse transcranial magnetic stimulation (sp-TMS) over the contralateral DLPFC and bilateral SIs of human participants at various time points, while they performed a tactile-visual delayed matching-to-sample task with a 2-second delay. sp-TMS over the contralateral DLPFC or the contralateral SI at either an sensory encoding stage [i.e. 100 ms after the onset of a vibrotactile sample stimulus (200-ms duration)] or an early maintenance stage (i.e. 300 ms after the onset), significantly impaired the accuracy of task performance; sp-TMS over the contralateral DLPFC or the ipsilateral SI at a late maintenance stage (1600 ms and 1900 ms) also significantly disrupted the performance. Furthermore, at 300 ms after the onset of the vibrotactile sample stimulus, there was a significant correlation between the deteriorating effects of sp-TMS over the contralateral SI and the contralateral DLPFC. These results imply that the DLPFC and the bilateral SIs play causal roles at distinctive stages during cross-modal working memory, while the contralateral DLPFC communicates with the contralateral SI in the early delay, and cooperates with the ipsilateral SI in the late delay. Copyright © 2018 Elsevier B.V. All rights reserved.

40 CFR 91.1003 - Exclusions based on section 216(10) of the Act.

Code of Federal Regulations, 2010 CFR

2010-07-01

...) AIR PROGRAMS (CONTINUED) CONTROL OF EMISSIONS FROM MARINE SPARK-IGNITION ENGINES Exclusion and Exemption of Marine SI Engines § 91.1003 Exclusions based on section 216(10) of the Act. (a) For the purpose of determining the applicability of section 216(10) of the Act, any marine SI engine as that term is...

Sexual abuse and substance abuse increase risk of suicidal behavior in Malaysian youth.

PubMed

Chan, Lai Fong; Maniam, T; Saini, Suriati Mohamed; Shah, Shamsul Azhar; Loh, Sit Fong; Sinniah, Aishvarya; Idris, Zawaha Haji; Che Rus, Sulaiman; Hassan Nudin, Siti Sa'adiah; Tan, Susan Mooi Koon

2013-04-01

The aim of this study was to determine the association between sexual abuse, substance abuse and socio-demographic factors with suicidal ideation (SI), plans (SP) and deliberate self-harm (DSH) and propose steps to prevent youth suicidal behavior. This was a cross-sectional study of 6786 adolescents aged 17-18 years, selected randomly from all Malaysian adolescents to undergo compulsory youth camps located in Selangor, Malaysia (2008-2009). Participants were assessed using self-administered questionnaires developed to reflect the local cultural setting. However, only 4581 subjects were analyzed after excluding incomplete data. The rates of SI, SP and DSH were 7.6%, 3.2% and 6.3%, respectively. The multivariable-adjusted odds ratio showed that sexual abuse was associated with SI 1.99 (95% CI: 1.56-2.55), SP 1.57 (95% CI: 1.09-2.27) and DSH 2.26 (95% CI: 1.75-2.94); illicit drug use was associated with SI 4.05 (95% CI: 2.14-7.67), SP 2.62 (95% CI: 1.05-6.53) and DSH 2.06, (95% CI: 1.05-4.04); for alcohol use DSH was 1.34 (95% CI: 1.00-1.79). Being female was associated with all suicidal behaviors: SI 2.51 (95% CI: 1.91-3.30), SP 2.07 (95% CI: 1.39-3.08) and DSH 1.59 (95% CI: 1.19-2.11). Given the well-founded concern of increasing risk of suicidal behavior among youth, preventive efforts should adopt a more comprehensive approach in dealing with sexual abuse and substance abuse, and their sequelae, especially in girls. Copyright © 2013 Wiley Publishing Asia Pty Ltd.

Thermal and Microstructure Characterization of Zn-Al-Si Alloys and Chemical Reaction with Cu Substrate During Spreading

NASA Astrophysics Data System (ADS)

Berent, Katarzyna; Pstruś, Janusz; Gancarz, Tomasz

2016-08-01

The problems associated with the corrosion of aluminum connections, the low mechanical properties of Al/Cu connections, and the introduction of EU directives have forced the potential of new materials to be investigated. Alloys based on eutectic Zn-Al are proposed, because they have a higher melting temperature (381 °C), good corrosion resistance, and high mechanical strength. The Zn-Al-Si cast alloys were characterized using differential scanning calorimetry (DSC) measurements, which were performed to determine the melting temperatures of the alloys. Thermal linear expansion and electrical resistivity measurements were performed at temperature ranges of -50 to 250 °C and 25 to 300 °C, respectively. The addition of Si to eutectic Zn-Al alloys not only limits the growth of phases at the interface of liquid solder and Cu substrate but also raises the mechanical properties of the solder. Spreading test on Cu substrate using eutectic Zn-Al alloys with 0.5, 1.0, 3.0, and 5.0 wt.% of Si was studied using the sessile drop method in the presence of QJ201 flux. Spreading tests were performed with contact times of 1, 8, 15, 30, and 60 min, and at temperatures of 475, 500, 525, and 550 °C. After cleaning the flux residue from solidified samples, the spreadability of Zn-Al-Si on Cu was determined. Selected, solidified solder/substrate couples were cross-sectioned, and the interfacial microstructures were studied using scanning electron microscopy and energy dispersive x-ray spectroscopy. The growth of the intermetallic phase layer was studied at the solder/substrate interface, and the activation energy of growth of Cu5Zn8, CuZn4, and CuZn phases were determined.

Developing the Thai Siriraj Psoriatic Arthritis Screening Tool and validating the Thai Psoriasis Epidemiology Screening Tool and the Early Arthritis for Psoriatic Patients questionnaire.

PubMed

Chiowchanwisawakit, Praveena; Wattanamongkolsil, Luksame; Srinonprasert, Varalak; Petcharat, Chonachan; Siriwanarangsun, Palanan; Katchamart, Wanruchada

2016-10-01

To validate the Thai language version of the Psoriasis Epidemiology Screening Tool (PEST) and the Early Arthritis for Psoriatic Patients Questionnaire (EARP), as well as also to develop a new tool for screening psoriatic arthritis (PsA) among psoriasis (Ps) patients. This was a cross-sectional study. Ps patients visiting the psoriasis clinic at Siriraj Hospital were recruited. They completed the EARP and PEST. Full musculoskeletal history, examination, and radiography were evaluated. PsA was diagnosed by a rheumatologist's evaluation and fulfillment of the classification criteria for psoriatic arthritis. Receiver operator characteristic (ROC) curves, sensitivity, and specificity were used to evaluate the performances of the tools. The Siriraj Psoriatic Arthritis Screening Tool (SiPAT) contained questions most relevant to peripheral arthritis, axial inflammation, and enthesitis, selected from multivariate analysis. Of a total of 159 patients, the prevalence of PsA was 78.6 %. The ROC curve analyses of Thai EARP, PEST, and SiPAT were 0.90 (95 % CI 0.84, 0.96), 0.85 (0.78, 0.92), and 0.89 (0.83, 0.95), respectively. The sensitivities of SiPAT, Thai EARP, and PEST were 91.0, 83.0, and 72.0 %, respectively, while the specificities were 69.0, 79.3, and 89.7 %, respectively. All screening questionnaires showed good diagnostic performances. SiPAT could be considered as a screening tool with its desirable properties: higher sensitivity and taking less time. Thai PEST and EARP could possibly be sequentially administered for people with a positive test from SiPAT to reduce the number of false positives.

Berkovich Nanoindentation on AlN Thin Films.

PubMed

Jian, Sheng-Rui; Chen, Guo-Ju; Lin, Ting-Chun

2010-03-31

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm-3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young's modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young's modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

TEM and STEM Studies on the Cross-sectional Morphologies of Dual-/Tri-layer Broadband SiO2 Antireflective Films

NASA Astrophysics Data System (ADS)

Wang, Shuangyue; Yan, Hongwei; Li, Dengji; Qiao, Liang; Han, Shaobo; Yuan, Xiaodong; Liu, Wei; Xiang, Xia; Zu, Xiaotao

2018-02-01

Dual-layer and tri-layer broadband antireflective (AR) films with excellent transmittance were successfully fabricated using base-/acid-catalyzed mixed sols and propylene oxide (PO) modified silica sols. The sols and films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), nuclear magnetic resonance (NMR), transmission electron microscope (TEM), and scanning transmission electron microscope (STEM). FTIR and TEM results suggest that the PO molecules were covalently bonded to the silica particles and the bridge structure existing in PO modified silica sol is responsible for the low density of the top layer. The density ratio between different layers was measured by cross-sectional STEM, and the results are 1.69:1 and 2.1:1.7:1 from bottom-layer to top-layer for dual-layer and tri-layer films, respectively. The dual-layer film demonstrates good stability with 99.8% at the central wavelength of 351 nm and nearly 99.5% at the central wavelength of 1053 nm in laser system, and for the tri-layer AR film, the maximum transmittance reached nearly 100% at both the central wavelengths of 527 and 1053 nm.

Measurements of elastic and inelastic scattering cross-sections using monoenergetic Kα radiation

NASA Astrophysics Data System (ADS)

Rao, Donepudi V.; Seltzer, S. M.; Hubbell, John H.; Cesareo, Roberto; Brunetti, Antonio; Gigante, Giovanni E.

2000-12-01

Elastic and inelastic scattering cross-sections for low, medium and high Z atoms are measured in vacuum using an x- ray tube with a secondary targets as an excitation source. Monoenergetic K(alpha) radiation emitted from the secondary target is used to excite the sample. Monoenergetic radiation emitted from the secondary target is used to excite the sample. Monoenergetic radiation is also produced using two secondary targets coupled to an x-ray tube and the radiation from the second target of the system is used to excite the sample. Elastic and inelastic scattering of K(alpha) X-ray line energies of the secondary target by the sample are recorded with Hp Ge and Si(Li) detectors. Using this system the degree of monochromaticity of the secondary emission and the geometrical effects of the measuring system is estimated. The efficiency is large because the secondary target acts as a converter. Experimental results based on this system will be presented and compared with theoretical estimates. The importance of the dat and the potential use of the system for few applications in the field of medicine and archaeometry will also be presented.

DOSE EFFECT OF THE 33S(n,α) 30SI REACTION IN BNCT USING THE NEW n_TOF-CERN DATA.

PubMed

Sabaté-Gilarte, M; Praena, J; Porras, I; Quesada, J M

2017-09-23

33S is a stable isotope of sulphur which is being studied as a potential cooperative target for Boron Neutron Capture Therapy (BNCT) in accelerator-based neutron sources because of its large (n,α) cross section in the epithermal neutron energy range. Previous measurements resolved the resonances with a discrepant description of the lowest-lying and strongest one (at 13.5 keV). However, the evaluations of the major databases do not include resonances, except EAF-2010 which shows smaller values in this range than the experimental data. Furthermore, the glaring lack of data below 10 keV down to thermal (25.3 meV) has motivated a new measurement at n_TOF at CERN in order to cover the whole energy range. The inclusion of this new 33S(n,α) cross section in Monte Carlo simulations provides a more accurate estimation of the deposited kerma rate in tissue due to the presence of 33S. The results of those simulations represent the goal of this work. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Silica nanogelling of environment-responsive PEGylated polyplexes for enhanced stability and intracellular delivery of siRNA.

PubMed

Gouda, Noha; Miyata, Kanjiro; Christie, R James; Suma, Tomoya; Kishimura, Akihiro; Fukushima, Shigeto; Nomoto, Takahiro; Liu, Xueying; Nishiyama, Nobuhiro; Kataoka, Kazunori

2013-01-01

In this study, poly(ethylene glycol) (PEG)-block-polycation/siRNA complexes (PEGylated polyplexes) were wrapped with a hydrated silica, termed "silica nanogelling", in order to enhance their stability and functionality. Silica nanogelling was achieved by polycondensation of soluble silicates onto the surface of PEGylated polyplexes comprising a disulfide cross-linked core. Formation of silica nanogel layer on the PEGylated cross-linked polyplexes was confirmed by particle size increase, surface charge reduction, and elemental analysis of transmission electron micrographs. Silica nanogelling substantially improved polyplex stability against counter polyanion-induced dissociation under non-reductive condition, without compromising the reductive environment-responsive siRNA release triggered by disulfide cleavage. Silica nanogelling significantly enhanced the sequence-specific gene silencing activity of the polyplexes in HeLa cells without associated cytotoxicity, probably due lower endosomal entrapment (or lysosomal degradation) of delivered siRNA. The lower endosomal entrapment of the silica nanogel system could be explained by an accelerated endosomal escape triggered by deprotonated silanol groups in the silica (the proton sponge hypothesis) and/or a modulated intracellular trafficking, possibly via macropinocytosis, as evidenced by the cellular uptake inhibition assay. Henceforth, silica nanogelling of PEGylated siRNA polyplexes is a promising strategy for preparation of stable and functional siRNA delivery vehicles. Copyright © 2012 Elsevier Ltd. All rights reserved.

Microstructure and mechanical properties of Zr-Si-N films prepared by rf-reactive sputtering

NASA Astrophysics Data System (ADS)

Nose, M.; Chiou, W. A.; Zhou, M.; Mae, T.; Meshii, M.

2002-05-01

ZrN and ZrSiN films were prepared in an rf sputtering apparatus that has a pair of targets facing each other (referred to as the facing target-type rf sputtering). Films were deposited on silicon wafers without bias application or substrate heating in order to examine only the effect of silicon addition to the transition metal nitride films. The contents of zirconium, nitrogen, and silicon of the films were determined with an electron probe microanalyzer. The transmission electron microscopy studies were carried out in addition to x-ray diffraction. For the high resolution transmission electron microscopy observation, the field emission type transmission electron microscope was used, which provides a point-to-point resolution of 0.1 nm. The samples were observed both parallel and perpendicular to the film surface, which were plane and cross sectional views, respectively. In order to investigate the relationship between the mechanical properties and microstructure of films, the hardness was measured by a nanoindentation system at room temperature. The load was selected to keep the impression depth below 60 nm (not more than 5% of film thickness) so that the influence from the substrate can be neglected. The hardness of the films increases with small Si additions reaching the maximum value of 35 GPa at around 3 at. % Si. The tendency to grow columnar grains was strongest around this composition, while grains became equiaxial above 5 at. % of Si. The films containing 12.8% Si, which showed the lowest hardness of 18 GPa, consist of nanocrystal grains. The presence of ZrN nanocrystals embedded in Si3N4 was not observed in the present study. The hardening mechanism due to the addition of small amounts of Si in ZrN can not be determined at this time. The grain size and residual stress can make minor contributions to the hardening. A possibility of solid solution hardening due to atomistic strain, such as nitrogen atoms at interstitial sites or other point defects is postulated and should be examined further.

Laboratory Studies in UV and EUV Solar Physics

NASA Technical Reports Server (NTRS)

Parkinson, William

2003-01-01

The Ion Beam Experiment at the Center for Astrophysics is dedicated to the study of ion-electron collision processes of importance in solar physics. A paper describing our most recent measurement 'Absolute cross section for Si(2+)(3s3p(sup 3)Rho (sup 0) yields 3s3p(sup 1)Rho(sup 0)) electron-impact excitation' was published during the past year. Dr. Paul Janzen received his PhD. from the Harvard Physics Department on the basis of this and other work, such as the new electron cyclotron resonance (ECR) ion source. The ion source is producing stable beams with large currents for our present work on C(2+), and it also produces stable beams with large currents of more highly charged systems, for future work on systems such as O(4+). The past year has been focussed on our current program to measure absolute cross sections for Electron Impact Excitation (EIE) in C(2+), one of the primary ions used for probing the solar transition region. C(2+) beams produced by the ion source have been transported to the interaction region of the experiment, where the collisions are studied, and Visiting Scientist Dr. Adrian Daw is currently collecting data to measure the C(2+)(2s2p(sup 3)Rho(sup 0) yields 2p(sup 2)(sup 3)Rho) EIE cross section as a function of collision energy, under the guidance of Drs. John Kohl, Larry Gardner and Bill Parkinson. Also this year, modifications were made to the ECR ion source in order to produce greater currents of highly charged ions. Testing of the ion source was completed. Modifications were designed to extend the photon detection capabilities of the apparatus to shorter UV wavelengths, or EUV. Following the work on C(2+)(2s2p(sup 3)Pho(sup 0) yields 2p(sup 2)(sup 3)Rho), the extended UV detection capabilities will be used to measure the C(2+)(2s(sup 2)(sup 1)S yields 2s2p(sup 1)Rho(sup 0)) EIE cross section. The EUV modifications complement those of the new ion source, by enabling detection of EUV light generated by high charge state ions and putting us in a position to measure the excitation cross sections for more highly charged ions as well.

Evaluation of computational models and cross sections used by MCNP6 for simulation of characteristic X-ray emission from thick targets bombarded by kiloelectronvolt electrons

NASA Astrophysics Data System (ADS)

Poškus, A.

2016-09-01

This paper evaluates the accuracy of the single-event (SE) and condensed-history (CH) models of electron transport in MCNP6.1 when simulating characteristic Kα, total K (=Kα + Kβ) and Lα X-ray emission from thick targets bombarded by electrons with energies from 5 keV to 30 keV. It is shown that the MCNP6.1 implementation of the CH model for the K-shell impact ionization leads to underestimation of the K yield by 40% or more for the elements with atomic numbers Z < 15 and overestimation of the Kα yield by more than 40% for the elements with Z > 25. The Lα yields are underestimated by more than an order of magnitude in CH mode, because MCNP6.1 neglects X-ray emission caused by electron-impact ionization of L, M and higher shells in CH mode (the Lα yields calculated in CH mode reflect only X-ray fluorescence, which is mainly caused by photoelectric absorption of bremsstrahlung photons). The X-ray yields calculated by MCNP6.1 in SE mode (using ENDF/B-VII.1 library data) are more accurate: the differences of the calculated and experimental K yields are within the experimental uncertainties for the elements C, Al and Si, and the calculated Kα yields are typically underestimated by (20-30)% for the elements with Z > 25, whereas the Lα yields are underestimated by (60-70)% for the elements with Z > 49. It is also shown that agreement of the experimental X-ray yields with those calculated in SE mode is additionally improved by replacing the ENDF/B inner-shell electron-impact ionization cross sections with the set of cross sections obtained from the distorted-wave Born approximation (DWBA), which are also used in the PENELOPE code system. The latter replacement causes a decrease of the average relative difference of the experimental X-ray yields and the simulation results obtained in SE mode to approximately 10%, which is similar to accuracy achieved with PENELOPE. This confirms that the DWBA inner-shell impact ionization cross sections are significantly more accurate than the corresponding ENDF/B cross sections when energy of incident electrons is of the order of the binding energy.