Science.gov

Sample records for si crystals measured

  1. Temperature and Field Induced Strain Measurements in Single Crystal Gd5Si2Ge2

    NASA Astrophysics Data System (ADS)

    McCall, S. K.; Nersessian, N.; Carman, G. P.; Pecharsky, V. K.; Schlagel, D. L.; Radousky, H. B.

    2016-06-01

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of -8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of -8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.

  2. Polarization and resistivity measurements of post-crystallization changes in amorphous Fe-B-Si alloys

    SciTech Connect

    Chattoraj, I.; Bhattamishra, A.K. . CRP Div.); Mitra, A. . MTP Div.)

    1993-09-01

    The effects of grain growth and compositional changes on the electrochemical behavior and the resistivity of amorphous iron-boron-silicon (Fe[sub 77.5]B[sub 15]Si[sub 7.5]) alloys after crystallization were studied. Deterioration of the protective passive film was observed, along with increased annealing. Potentiodynamic polarization provided excellent information about microstructural and chemical changes. It was concluded that electrochemical measurements could be used in conjunction with resistivity measurements in direct studies of grain growth and chemical changes occurring in different phases of the devitrified alloy.

  3. Improved measurement results for the Avogadro constant using a 28Si-enriched crystal

    NASA Astrophysics Data System (ADS)

    Azuma, Y.; Barat, P.; Bartl, G.; Bettin, H.; Borys, M.; Busch, I.; Cibik, L.; D'Agostino, G.; Fujii, K.; Fujimoto, H.; Hioki, A.; Krumrey, M.; Kuetgens, U.; Kuramoto, N.; Mana, G.; Massa, E.; Meeß, R.; Mizushima, S.; Narukawa, T.; Nicolaus, A.; Pramann, A.; Rabb, S. A.; Rienitz, O.; Sasso, C.; Stock, M.; Vocke, R. D., Jr.; Waseda, A.; Wundrack, S.; Zakel, S.

    2015-04-01

    New results are reported from an ongoing international research effort to accurately determine the Avogadro constant by counting the atoms in an isotopically enriched silicon crystal. The surfaces of two 28Si-enriched spheres were decontaminated and reworked in order to produce an outer surface without metal contamination and improved sphericity. New measurements were then made on these two reconditioned spheres using improved methods and apparatuses. When combined with other recently refined parameter measurements, the Avogadro constant derived from these new results has a value of NA = 6.022 140 76(12) × 1023 mol-1. The x-ray crystal density method has thus achieved the target relative standard uncertainty of 2.0  ×  10-8 necessary for the realization of the definition of the new kilogram.

  4. Molar-mass measurement of a 28Si-enriched silicon crystal for determination of the Avogadro constant

    NASA Astrophysics Data System (ADS)

    Narukawa, Tomohiro; Hioki, Akiharu; Kuramoto, Naoki; Fujii, Kenichi

    2014-06-01

    The molar mass of a 28Si-enriched crystal was measured at the National Metrology Institute of Japan to determine the Avogadro constant by the x-ray crystal density method as part of the International Avogadro Coordination project. The molar mass was determined by isotope ratio measurements using a multicollector inductively coupled plasma mass spectrometer combined with an isotope dilution technique. The 28Si-enriched crystal was dissolved in tetramethylammonium hydroxide and three different blended solutions were used to correct for mass bias in the measurement. The molar mass of the 28Si-enriched crystal was determined to be 27.976 970 09 g mol-1 with a standard uncertainty of 0.000 000 14 g mol-1. This corresponds to a relative standard uncertainty of 5.2 × 10-9. This result is consistent with measurements reported by the Physikalisch-Technische Bundesanstalt, Germany.

  5. Temperature and field induced strain measurements in single crystal Gd5Si2Ge2

    DOE PAGES

    McCall, S. K.; Nersessian, N.; Carman, G. P.; ...

    2016-03-29

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of –8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of –8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Furthermore,more » using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.« less

  6. Strain distribution in an Si single crystal measured by interference fringes of X-ray mirage diffraction.

    PubMed

    Jongsukswat, Sukswat; Fukamachi, Tomoe; Ju, Dongying; Negishi, Riichirou; Hirano, Keiichi; Kawamura, Takaaki

    2013-10-01

    In X-ray interference fringes accompanied by mirage diffraction, variations have been observed in the spacing and position of the fringes from a plane-parallel Si single crystal fixed at one end as a function of distance from the incident plane of the X-rays to the free crystal end. The variations can be explained by distortion of the sample crystal due to gravity. From the variations and positions of the fringes, the strain gradient of the crystal has been determined. The distribution of the observed strain agrees with that expected from rod theory except for residual strain. When the distortion is large, the observed strain distribution does not agree with that expected from rod theory.

  7. Magnetoelasticity of Fe-Si single crystals

    SciTech Connect

    Xing, Q; Wu, D.; Lograsso, T. A.

    2010-04-20

    The tetragonal magnetostriction constant, (3/2){lambda}{sub 100}, of Fe-Si single crystals was measured and was found to be structure dependent. Similar to that of Fe-Ge single crystals, (3/2){lambda}{sub 100} is positive in the single phase A2 regime, becomes negative in the single phase D0{sub 3} regime, and changes from positive to negative between the two regimes. Short-range order in the A2 regime decreases the magnetostriction prior to the onset of long range order. In the single phase regions of both A2 and D0{sub 3}, thermal history does not show any obvious effect on the magnetostriction, contrary to that found for Fe-Ga alloys. However, in the regions of phase mixture involving A2, B2, and D0{sub 3} phases, quenching pushes the change in magnetostriction from positive to negative to higher Si contents.

  8. Studying the magnetic properties of CoSi single crystals

    SciTech Connect

    Narozhnyi, V. N. Krasnorussky, V. N.

    2013-05-15

    The magnetic properties of CoSi single crystals have been measured in a range of temperatures T = 5.5-450 K and magnetic field strengths H {<=} 11 kOe. A comparison of the results for crystals grown in various laboratories allowed the temperature dependence of magnetic susceptibility {chi}(T) = M(T)/H to be determined for a hypothetical 'ideal' (free of magnetic impurities and defects) CoSi crystal. The susceptibility of this ideal crystal in the entire temperature range exhibits a diamagnetic character. The {chi}(T) value significantly increases in absolute value with decreasing temperature and exhibits saturation at the lowest temperatures studied. For real CoSi crystals of four types, paramagnetic contributions to the susceptibility have been evaluated and nonlinear (with respect to the field) contributions to the magnetization have been separated and taken into account in the calculations of {chi}(T).

  9. Temperature and field induced strain measurements in single crystal Gd5Si2Ge2

    SciTech Connect

    McCall, S. K.; Nersessian, N.; Carman, G. P.; Pecharsky, V. K.; Schlagel, D. L.; Radousky, H. B.

    2016-03-29

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of –8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of –8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Furthermore, using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.

  10. Growth and characterization of cubic SiC single-crystal films on Si

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

    1987-01-01

    Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

  11. Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; George, Thomas

    1994-01-01

    Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.

  12. Influence of Containment on Defects in GeSi Crystals

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Croell, A.; Mazuruk, K.

    2009-01-01

    Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10(exp -5) m. A small meniscus bridges the gap between the top of the crystal and the wall. Key parameters involved in achieving detached growth are the contact angle between the melt and crucible and the pressure differential across the meniscus. Sessile drop measurements were used to determine the wetting angles of Ge(sub 1-x)Si(sub x) melts on a variety of substrates and found that the highest wetting angles were achieved with pyrolitic boron nitride (pBN). GeSi crystals have been repeatedly grown detached in pBN crucibles but only occasionally in crucibles with lower wetting angles. Experiments have been conducted to assess the effect of pressure differential across the meniscus in sealed crucibles. This was done by adjusting the temperature profile after partial melting of the starting material. In a separate set of experiments, the pressure was controlled by connecting the volume below the meniscus to a regulated gas supply. The experiments were in agreement with calculations which predicted that stable detachment will only occur in crucibles with a low wetting angle over a relatively narrow range of pressure differential. Detached-grown crystals exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  13. Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    1997-01-01

    We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

  14. Si XIII and Si XIV line emission search with the ANS crystal spectrometer

    NASA Technical Reports Server (NTRS)

    Parsignault, D. R.; Delvaille, J. P.; Epstein, A.; Grindlay, J. E.; Schnopper, H. W.

    1978-01-01

    The final results of the search for Si XIII and Si XIV line emission, using the ANS Bragg crystal spectrometer, are presented. No positive line detection was achieved in any of the measurements made on several types of cosmic object; i.e., a transient X-ray source, close binary systems, supernova remnants, GX sources, and clusters of galaxies. Three-sigma upper limits for discrete line emission from these objects are reported and compared with line strengths inferred from other proportional-counter and Bragg spectrometer data. The present upper limit of 1.0 eV for the equivalent width of a narrow Si XIV line emission from the X-ray nova A0620-00 is an order of magnitude lower than previous limits set by other experiments.

  15. Effect of Pt Doping on Nucleation and Crystallization in Li2O.2SiO2 Glass: Experimental Measurements and Computer Modeling

    NASA Technical Reports Server (NTRS)

    Narayan, K. Lakshmi; Kelton, K. F.; Ray, C. S.

    1996-01-01

    Heterogeneous nucleation and its effects on the crystallization of lithium disilicate glass containing small amounts of Pt are investigated. Measurements of the nucleation frequencies and induction times with and without Pt are shown to be consistent with predictions based on the classical nucleation theory. A realistic computer model for the transformation is presented. Computed differential thermal analysis data (such as crystallization rates as a function of time and temperature) are shown to be in good agreement with experimental results. This modeling provides a new, more quantitative method for analyzing calorimetric data.

  16. Float zone processing in a weightless environment. [Si crystals

    NASA Technical Reports Server (NTRS)

    Fowle, A. A.; Haggerty, J. S.; Strong, P. F.; Rudenberg, G.; Kronauer, R.

    1974-01-01

    Results are given for investigations into: (1) the physical limits which set the maximum practical diameters of Si crystals that can be processed by the float-zone method in a near weightless environment, and (2) the economic impact of large, space-produced Si crystals on the electronics industry. The stability of the melt is evaluated. Heat transfer and fluid flow within the melt as dependent on the crystal size and the degree and type of rotation imparted to the melt are studied. Methods of utilizing the weightless environment for the production of large, stress-free Si crystals of uniform composition are proposed. The economic effect of large size Si crystals, their potential applications, likely utilization and cost advantages in LSI, integrated circuits, and power devices are also evaluated. Foreseeable advantages of larger diameter wafers of good characteristics and the possibilities seen for greater perfection resulting from stress-free growth are discussed.

  17. Diamond turning of Si and Ge single crystals

    SciTech Connect

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  18. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    PubMed

    Pramann, Axel; Rienitz, Olaf

    2016-06-07

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  19. Fabrication of nanometer single crystal metallic CoSi2 structures on Si

    NASA Technical Reports Server (NTRS)

    Nieh, Kai-Wei (Inventor); Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor)

    1991-01-01

    Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

  20. Crystallization of amorphous Si nanoclusters in SiO(x) films using femtosecond laser pulse annealings.

    PubMed

    Korchagina, T T; Gutakovsky, A K; Fedina, L I; Neklyudova, M A; Volodin, V A

    2012-11-01

    The SiO(x) films of various stoichiometries deposited on Si substrates with the use of the co-sputtering from two separate Si and SiO2 targets were annealed by femtosecond laser pulses. Femtosecond laser treatments were applied for crystallization of amorphous silicon nanoclusters in the silicon-rich oxide films. The treatments were carried out with the use of Ti-Sapphire laser with wavelength 800 nm and pulse duration about 30 fs. Regimes of crystallization of amorphous Si nanoclusters in the initial films were found. Ablation thresholds for SiO(x) films of various stoichiometries were discovered. The effect of laser assisted formation of a-Si nanoclusters in the non-stoichiometric dielectric films with relatively low concentration of additional Si atoms was also observed. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

  1. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2010-01-01

    Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

  2. Bridgman Growth of Detached GeSi Crystals

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Vujisic, L.; Motakef, S.; Szofran, F. R.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    The growth of detached crystals by the Bridgman technique, in which the growing crystal is not in contact with the crucible wall, has been observed both on earth and in microgravity conditions. Such detachment has particularly been in evidence in microgravity experiments, where the pressure head of the molten sample is absent. At present, the mechanisms contributing to the detachment are not completely understood and until recently detachment has not been reproducibly obtained. Key parameters which must be considered are the contact angle between the melt and the crucible and the growth angle. Another essential parameter is the pressure difference between the annular gap around the solid below the melt and the volume above the melt. Here we present results of the growth of Ge(0.98)Si(0.02) using adjustments in the applied temperature profile to control the pressure difference between the bottom and top of the melt. The technique is less susceptible to sample contamination than controlling the pressure by connecting the crucible to external gas sources. Using this technique, a pressure difference is created by decreasing the temperature in the volume above the melt while the sample is molten but prior to growth. A maximum pressure difference approximately equal to the pressure head of the molten sample can thus be obtained. Several GeSi crystals were grown in pyrolitic boron nitride crucibles. When a pressure difference was applied, samples were reproducibly grown mostly detached. For comparison, samples were also grown in a configuration in which gas could pass freely between the gap below the melt and the volume above the melt and no pressure difference could be established. These samples were initially attached. Existence of detachment was determined both by measuring the radius of the samples with a profilometer and by observations of the sample surfaces with optical and electron microscopy. The gap thickness between the crucible and detached crystal was on the

  3. Silicon and magnesium diffusion in a single crystal of MgSiO3 perovskite

    NASA Astrophysics Data System (ADS)

    Xu, Junshan; Yamazaki, Daisuke; Katsura, Tomoo; Wu, Xiaoping; Remmert, Patrick; Yurimoto, Hisayoshi; Chakraborty, Sumit

    2011-12-01

    Si and Mg self-diffusion coefficients were measured simultaneously in single crystals of MgSiO3 perovskite under lower mantle conditions. There is little difference in Si volume diffusivity measured directly using single crystals (this study) and those retrieved from experiments with polycrystals (earlier studies). This agreement between studies establishes the reliability of Si diffusion coefficients measured in perovskite. Within the uncertainties of our measurements, no anisotropy in the diffusion of either Si or Mg could be resolved. Diffusion of Si and Mg in perovskite are described by an Arrhenius equation, D = D0 exp (-ΔH/RT) at 25 GPa, with D0 = 5.10 × 10-11 m2/s for Si and 4.99 × 10-11 m2/s for Mg, ΔH = 308 kJ/mol for Si, and 305 kJ/mol for Mg. Mg diffusivity in MgSiO3 perovskite is distinctly lower than those measured in olivine, wadsleyite, and ringwoodite. We find that Mg has very similar diffusivity to Si in perovskite. As a consequence, the rheological properties of the lower mantle may be controlled by the coupled motion of Si and Mg. A point defect-based model is discussed that may account for the diffusion behavior of Si and Mg in MgSiO3 perovskite. Our data indicate that, within realistic ranges of temperature, grain size, and state of stress, both diffusion creep as well as dislocation creep may be observed in the lower mantle.

  4. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

    PubMed Central

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-01-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers. PMID:26601894

  5. Measuring phonons in protein crystals

    NASA Astrophysics Data System (ADS)

    Niessen, Katherine A.; Snell, Edward; Markelz, A. G.

    2013-03-01

    Using Terahertz near field microscopy we find orientation dependent narrow band absorption features for lysozyme crystals. Here we discuss identification of protein collective modes associated with the observed features. Using normal mode calculations we find good agreement with several of the measured features, suggesting that the modes arise from internal molecular motions and not crystal phonons. Such internal modes have been associated with protein function.

  6. Advanced Si solid phase crystallization for vertical channel in vertical NANDs

    SciTech Connect

    Lee, Sangsoo; Son, Yong-Hoon; Hwang, Kihyun; Shin, Yoo Gyun; Yoon, Euijoon

    2014-07-01

    The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.

  7. Measurements, Standards, and the SI.

    ERIC Educational Resources Information Center

    Journal of Chemical Education, 1983

    1983-01-01

    Highlights six papers presented at the Seventh Biennial Conference on Chemical Education (Stillwater, Oklahoma 1982). Topics addressed included history, status, and future of SI units, algebra of SI units, periodic table, new standard-state pressure unit, and suggested new names for mole concept ("numerity" and "chemical amount"). (JN)

  8. [Lattice vibration of Sr3TaGa3Si2O14 single crystal].

    PubMed

    Yang, Hong; Lu, Gui-Wu; Yu, Ying-Hui; Li, Ying-Feng; Wang, Zeng-Mei

    2008-03-01

    Based on the space group theory, the normal vibration modes of Sr3 TaGa3Si2O14 (STGS) single crystal were predicted, and the Raman scattering intensities of non-polar and polar modes were calculated. The Raman spectrum of STGS crystal was measured, and lattice vibration modes of STGS crystal were assigned. For symmetry species A1, six typical Raman-active optical modes have been recorded at 126, 245, 557, 604, 896 and 991 cm(-1), respectively. It is easy to assign the mode of 126 cm(-1) as the relative translation between SiO4, Sr and the TaO6. The mode 245 cm(-1) corresponds to the twisting vibration of SiO4 correlating with the Sr-TaO6-Sr stretching vibration. The mode 557 cm(-1) was assigned as the O-Ta-O stretching vibration, while the mode 604 cm(-1) as the O-Ga-O stretching vibration. The band at 896 cm(-1) in the Raman spectrum was assigned to be the O-Si-O stretching vibration of the two SiO4 tetrahedra in the primitive cell of STGS single crystal. Meanwhile, the band at 991 cm(-1) in the Raman spectrum was assigned to be the Si-O stretching vibration of the two SiO4 tetrahedra in the primitive cell of STGS single crystal. The layer structure of STGS crystal was identified by both theory study and Raman spectroscopy experiment results. The small anisotropy and piezoelectric modulus of STGS crystal were ascribed to the weak distortion of decahedral unit.

  9. Bridgman Growth of Detached GeSi Crystals

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Vujisic, L.; Motakef, S.; Szofran, F. R.

    2002-01-01

    Ge(1-x)Si(x) (0 less than x less than 0.12) has been grown by the vertical Bridgman technique using adjustments in the applied temperature profile to control the pressure difference between the bottom and top of the melt. Using this technique. a pressure difference is created by decreasing the temperature in the gas volume above the melt while the sample is molten but prior to growth. A maximum pressure difference approximately equal to the hydrostatic pressure of the molten sample can thus be obtained. Several GeSi crystals were grown in pyrolitic boron nitride ampoules. When a pressure difference was applied, samples were reproducibly grown mostly detached. For comparison, samples were also grown in a configuration in which gas could flow freely between the gap below the melt and the volume above the melt and no pressure difference could be established. These samples were initially attached. Existence of detachment was determined both by measuring the surface roughness of the samples with a profilometer and by observations of the sample surfaces with optical and electron microscopy.

  10. Bridgman Growth of Detached GeSi Crystals

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Vujisic, L.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Ge(1-x)Si(x)(0 less than x less than 0.12) has been grown by the vertical Bridgman technique using adjustments in the applied temperature profile to control the pressure difference between the bottom and top of the melt. Using this technique, a pressure difference is created by decreasing the temperature in the gas volume above the melt while the sample is molten but prior to growth. A maximum pressure difference approximately equal to the hydrostatic pressure of the molten sample can thus be obtained. Several GeSi crystals were grown in pyrolitic boron nitride ampoules. When a pressure difference was applied, samples were reproducibly grown mostly detached. For comparison, samples were also grown in a configuration in which gas could flow freely between the gap below the melt and the volume above the melt and no pressure difference could be established. These samples were initially attached. Existence of detachment was determined both by measuring the surface roughness of the samples with a profilometer and by observations of the sample surfaces with optical and electron microscopy.

  11. Ultrashort light pulse selfdifraction in Si and CdSe single crystals

    NASA Astrophysics Data System (ADS)

    Baltramejunas, R.; Vaitkus, J.; Veleckas, D.

    1981-10-01

    Interaction of mode-locked neodyme-glass laser pulses with Si and CdSe single crystals has been investigated. The dependence of light induced diffraction on time is demonstrated in differently doped Si and CdSe. the possibility to use semiconductors for light-coherence measurement is discussed and necessary conditions are determined. The influence of thermal heating is discussed. the mechanisms of recombination at high excitation level was determined in both materials.

  12. Magnetic order and crystal structure study of YNi4Si-type NdNi4Si

    NASA Astrophysics Data System (ADS)

    Yao, Jinlei; Isnard, O.; Morozkin, A. V.; Ivanova, T. I.; Koshkid`ko, Yu. S.; Bogdanov, A. E.; Nikitin, S. A.; Suski, W.

    2015-02-01

    Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi4Si-type (space group Cmmm) NdNi4Si compound are presented. The magnetocaloric effect of NdNi4Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of -3.3 J/kg K for a field change of 50 kOe near TC=12 K. Below ~12 K, NdNi4Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm‧m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μB. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu5-type compound.

  13. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  14. Strain relaxation of GaAs/Ge crystals on patterned Si substrates

    SciTech Connect

    Taboada, A. G. Kreiliger, T.; Falub, C. V.; Känel, H. von; Isa, F.; Isella, G.; Salvalaglio, M.; Miglio, L.; Wewior, L.; Fuster, D.; Alén, B.; Niedermann, P.; Neels, A.; Dommann, A.; Mancarella, F.

    2014-01-13

    We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

  15. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2011-01-01

    Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

  16. Structural characterization of Lu1.8Y0.2SiO5 crystals

    NASA Astrophysics Data System (ADS)

    Chiriu, Daniele; Faedda, Nicola; Lehmann, Alessandra Geddo; Ricci, Pier Carlo; Anedda, Alberto; Desgreniers, Serge; Fortin, Emery

    2007-08-01

    The structural and vibrational properties of Lu1.8Y0.2SiO5 (LYSO) single crystals were investigated by means of Raman spectroscopy and x-ray diffraction measurements. Unit cell parameters and bond lengths were determined by Rietveld refinement of the collected x-ray diffraction powder spectra. By comparison with the vibrational spectra of the parent compounds Lu2SiO5 and Y2SiO5 and by using polarized Raman measurements, we propose the assignment of the principal vibrational modes of LYSO crystals. The strict connection of Raman spectra of the LYSO solid solution and of the pure lutetium and yttrium crystals, as well as the analysis of the polarized measurements, confirms that LYSO structure adopts the C2/c space group symmetry. The structural analogies of LYSO with the pure compound Lu2SiO5 are further shown by means of high pressure Raman spectroscopy, and the possibility of considering the LYSO crystal analogous to the LSO structure with a tensile stress between 0.25 and 0.80GPa is discussed.

  17. Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion

    NASA Astrophysics Data System (ADS)

    Li, Xinlu; Feng, Shuang; Liu, Xiuhuan; Hou, Lixin; Gao, Yanjun; Wang, Qi; Liu, Nian; Zhang, Hai; Chen, Zhanguo; Zheng, Jie; Jia, Gang

    2014-07-01

    The method of high temperature thermal diffusion was successfully applied for doping Si impurities into cubic boron nitride (cBN) crystals. X-ray photoelectron spectra (XPS) and the current-voltage (I-V) characteristics at different temperatures were respectively used for analyzing the chemical states and the activation energy of Si impurity in cBN. According to the XPS results, Si impurities mainly replace B atoms bonding with the adjacent N atoms and become donors in cBN. Without surface cleaning, there are a lot of C and O contaminations on the surface of cBN, so a small quantity of C-Si and Si-N-O bonds also exist at the surface of cBN. Most Si impurities distribute in the shallow layer underneath the surface of cBN. Based on the electric measurement, Si impurities in cBN usually have the activation energy beyond 0.4 eV, and they can only be slightly ionized at room temperature, therefore the resistivity of Si-doped cBN is still high, and the space charge limited current becomes the main conductive mechanism in cBN. However, the conductivity of Si-doped cBN can rapidly increase with the temperature. In addition, the activation energy and the concentration of Si impurity in cBN can be affected by the temperature and the time of thermal diffusion, which needs to be verified further.

  18. Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc

    NASA Astrophysics Data System (ADS)

    Ou, Sin-Liang; Kuo, Po-Cheng; Chen, Sheng-Chi; Tsai, Tsung-Lin; Yeh, Chin-Yen; Chang, Han-Feng; Lee, Chao-Te; Chiang, Donyau

    2011-09-01

    The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu3Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu3Si nucleation sites as the film was annealed at 270 °C. After heating to 500 °C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4× BD-R with the bottom jitter values below 6.5%.

  19. Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method

    NASA Astrophysics Data System (ADS)

    Thi Kieu Lien, Mai; Horita, Susumu

    2016-03-01

    Amorphous Si thin films on yttria-stabilized zirconia (YSZ) layers were crystallized widely in solid phase by the two-step method with a pulsed laser, moving the sample stage. The crystalline quality, impurity diffusion, and electrical properties of the crystallized Si films were investigated. It was found that the crystallinity of the Si thin films was improved and their surface was smooth without an incubation layer at the interface, indicating the uniform crystallinity of Si on YSZ. The diffusion of Zr and Y into the Si thin films was as small as or smaller than the order of 1017 atoms/cm3. We evaluated the electrical properties of carrier concentration and Hall mobility of the Si thin films with/without YSZ layers by using the resistivity and AC Hall effect measurements. The temperature and doping concentration dependences were measured for both undoped and P-doped films. It was found that both the undoped and P-doped Si/YSZ/glass films showed higher mobilities and carrier concentrations (and therefore higher conductivities), which indicate a smaller number of defects, than the Si/glass films. This suggested that the Si film crystallized on the YSZ layer is more suitable for application to electronic devices than the Si film on glass.

  20. Piezoelectric Ca3NbGa3Si2O14 crystal: crystal growth, piezoelectric and acoustic properties

    NASA Astrophysics Data System (ADS)

    Roshchupkin, Dmitry; Ortega, Luc; Plotitcyna, Olga; Erko, Alexei; Zizak, Ivo; Vadilonga, Simone; Irzhak, Dmitry; Emelin, Evgenii; Buzanov, Oleg; Leitenberger, Wolfram

    2016-08-01

    Ca3NbGa3Si2O14 (CNGS), a five-component crystal of lanthanum-gallium silicate group, was grown by the Czochralski method. The parameters of the elementary unit cell of the crystal were measured by powder diffraction. The independent piezoelectric strain coefficients d{}_{11} and d_{14} were determined by the triple-axis X-ray diffraction in the Bragg and Laue geometries. Excitation and propagation of surface acoustic waves (SAW) were studied by high-resolution X-ray diffraction at BESSY II synchrotron radiation source. The velocity of SAW propagation and power flow angles in the Y-, X- and yxl/{+}36°-cuts of the CNGS crystal were determined from the analysis of the diffraction spectra. The CNGS crystal was found practically isotropic by its acoustic properties.

  1. Crystal structure of laser-induced subsurface modifications in Si

    SciTech Connect

    Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in ’t Veld, A. J.

    2015-06-04

    Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.

  2. Molecular insights into the heterogeneous crystal growth of si methane hydrate.

    PubMed

    Vatamanu, Jenel; Kusalik, Peter G

    2006-08-17

    In this paper we report a successful molecular simulation study exploring the heterogeneous crystal growth of sI methane hydrate along its [001] crystallographic face. The molecular modeling of the crystal growth of methane hydrate has proven in the past to be very challenging, and a reasonable framework to overcome the difficulties related to the simulation of such systems is presented. Both the microscopic mechanisms of heterogeneous crystal growth as well as interfacial properties of methane hydrate are probed. In the presence of the appropriate crystal template, a strong tendency for water molecules to organize into cages around methane at the growing interface is observed; the interface also demonstrates a strong affinity for methane molecules. The maximum growth rate measured for a hydrate crystal is about 4 times higher than the value previously determined for ice I in a similar framework (Gulam Razul, M. S.; Hendry, J. G.; Kusalik, P. G. J. Chem. Phys. 2005, 123, 204722).

  3. Growth and characterization of large CdSiP 2 single crystals

    NASA Astrophysics Data System (ADS)

    Zawilski, Kevin T.; Schunemann, Peter G.; Pollak, Thomas C.; Zelmon, David E.; Fernelius, Nils C.; Kenneth Hopkins, F.

    2010-04-01

    Large, optically transparent crystals of CdSiP 2 (CSP) have been grown for the first time from a stoichiometric melt. The material is a high temperature analog to ZnGeP 2 with promising characteristics for IR frequency conversion. Crystals are birefringent and are transparent from 0.5 to 9 μm. Polycrystalline charges were successfully synthesized from high purity elemental starting materials by two-temperature vapor transport despite the very high equilibrium vapor pressure (˜22 atm) at the melting point of CdSiP 2 (1133 °C). Single crystals were grown using the horizontal gradient freeze (HGF) technique in high-temperature transparent furnaces. Over the course of several growth runs, the material proved to be prone to cracking and to twinning along (1 1 2) planes. Twinning was eliminated by seeded growth along directions normal to the 112 planar boundaries. Further modifications to growth conditions resulted in high optical quality, crack- and twin-free single crystals 70×25×8 mm 3. The largest CdSiP 2 single crystals previously reported in the literature were grown through either halogen assisted vapor transport or from a molten Sn flux and measured 2×2×0.2 mm 3. The HGF growth of large CdSiP 2 crystals has allowed several bulk properties to be measured for the first time, including the thermal expansion coefficients, thermal conductivity, and wavelength dependent birefringence and dispersion. Measurements of the optical and thermal properties reveal this to be an extremely promising material for 1-, 1.5-, and 2 μm-pumped mid-IR lasers.

  4. Optical hyperpolarization and inductive readout of 31P donor nuclei in natural abundance single crystal 29Si

    NASA Astrophysics Data System (ADS)

    Alexander, Thomas; Haas, Holger; Deshpande, Rahul; Gumann, Patryk; Cory, David

    2016-05-01

    We optically polarize and inductively detect 31P donor nuclei in single crystal silicon at high magnetic fields (6 . 7T). Samples include both natural abundance 29Si and an isotopically purified 28Si sample. We observe dipolar order in the 29Si nuclear spins through a spin-locking measurement. This provides a means of characterizing spin transport in the vicinity of the 31P donors.

  5. The Effect of Multiple Interface States and nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by their G—V Characteristics

    NASA Astrophysics Data System (ADS)

    Shi, Yong; Ma, Zhong-Yuan; Chen, Kun-Ji; Jiang, Xiao-Fan; Li, Wei; Huang, Xin-Fan; Xu, Ling; Xu, Jun; Feng, Duan

    2013-07-01

    An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiNx/a-Si/SiO2. There are nc-Si dots isolated by a-Si due to partial crystallization. Conductance-voltage (G—V) measurements are performed to investigate the effect of multiple interface states including Si-sub/SiO2, a-Si related (as-deposited sample) and nc-Si (annealed sample) in a charge trapping/releasing process. Double conductance peaks located in the depletion and weak inversion regions are found in our study. For the as-deposited sample, the Si-sub/SiO2 related G—V peak with weak intensity shifts to the negative as test frequency increases. The a-Si related G—V peak with strong intensity shifts slightly with the increasing frequency. For the annealed sample, little change appears in the intensity and shift of Si-sub/SiO2 related G—V peaks. The position of a-Si/nc-Si related peak is independent of frequency, and its intensity is weaker compared to that of the as-deposited sample. It is also found that as the size of nc-Si becomes larger, the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si.

  6. Uncertainty assessment of Si molar mass measurements

    NASA Astrophysics Data System (ADS)

    Mana, G.; Massa, E.; Valkiers, S.; Willenberg, G.-D.

    2010-01-01

    The uncertainty of the Si molar mass measurement is theoretically investigated by means of a two-isotope model, with particular emphasis to the role of this measurement in the determination of the Avogadro constant. This model allows an explicit calibration formula to be given and propagation of error analysis to be made. It also shows that calibration cannot correct for non-linearity.

  7. Magnetic order and crystal structure study of YNi{sub 4}Si-type NdNi{sub 4}Si

    SciTech Connect

    Yao, Jinlei; Isnard, O.; Morozkin, A.V.; Ivanova, T.I.; Koshkid'ko, Yu.S.; Bogdanov, A.E.; Nikitin, S.A.; Suski, W.

    2015-02-15

    Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi{sub 4}Si-type (space group Cmmm) NdNi{sub 4}Si compound are presented. The magnetocaloric effect of NdNi{sub 4}Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of –3.3 J/kg K for a field change of 50 kOe near T{sub C}=12 K. Below ∼12 K, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μ{sub B}. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu{sub 5}-type compound. - Graphical abstract: The NdNi{sub 4}Si supplement the series of the orthorhombic derivative of the CaCu{sub 5}-type, namely the YNi{sub 4}Si-type, RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho). Below ∼12 K in a zero applied magnetic field, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group. Compared to the CaCu{sub 5}-type NdNi{sub 4}Si compound, the YNi{sub 4}Si-type counterpart has the relatively high ferromagnetic ordering temperature (9.2 K vs. 12 K), the small magnetocaloric effect (–7.3 J/kg K vs. –3.3 J/kg K for ∆H=50 kOe), and the large magnetic anisotropy at low temperatures. In contrast with CaCu{sub 5}-type NdNi{sub 4}Si, YNi{sub 4}Si-type NdNi{sub 4}Si shows distinct hysteresis loop at 2 K.We suggest that orthorhombic distortion may be used as a prospective route for optimization of permanent magnetic properties in the family of CaCu{sub 5}-type rare earth materials. - Highlights: • Below ∼12 K the YNi{sub 4}Si-type NdNi{sub 4}Si shows a ferromagnetic ordering. • MCE of NdNi{sub 4}Si reaches value of –3.3 J/kg K in 0–50 kOe near Curie point. • NdNi{sub 4}Si exhibits b-axis ferromagnetic order with the Cmm′m magnetic space

  8. Polarized spectroscopic properties of Er3+:Gd2SiO5 crystal and evaluation of Er3+:Yb3+:Gd2SiO5 crystal as a 1.55 μm laser medium

    NASA Astrophysics Data System (ADS)

    Wang, H.; Huang, J. H.; Gong, X. H.; Chen, Y. J.; Lin, Y. F.; Luo, Z. D.; Huang, Y. D.

    2016-10-01

    An Er3+-doped Gd2SiO5 single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd-Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er3+-Yb3+ co-doped Gd2SiO5 crystal was evaluated.

  9. Si-O Bonded Interactions in Silicate Crystals and Molecules: A Comparison

    SciTech Connect

    Gibbs, Gerald V.; Jayatilaka, Dylan; Spackman, M. A.; Cox, David F.; Rosso, Kevin M.

    2006-11-16

    Bond critical point, local kinetic energy density, G(rc), and local potential energy density, V(rc), properties of the electron density distributions, ρ(r), calculated for silicates like quartz and molecules like disiloxane are similar, indicating that the forces that govern the Si-O bonded interactions in crystals are short-ranged and molecular-like. Using the G(rc)/ρ(rc) ratio as a measure of bond character, the ratio increases as the Si-O bond length, the local electronic energy density, H(rc) = G(rc) + V(rc), and the oordination number of the Si atom decrease, and as the value of the electron density at the bond critical point, ρ(rc) and the Laplacian, ∇2ρ(rc), increase. The G(rc)/ρ(rc) and H(rc)/ρ(rc) ratios categorize the bond as observed for other second row atom M-O bonds into nonequivalent classes with the covalent character of each of the M-O bonds increasing with the H(rc)/ρ(rc) ratio. Some workers consider the Si-O bond to be highly ionic and others considered it to be either intermediate or substantially covalent. The character of the bond is examined in terms of the large net atomic basin charges conferred on the Si atoms comprising disiloxane, stishovite, quartz and forsterite, the domains of localized electron density along the Si-O bond vectors and on the reflex side of the Si-O-Si angle together with the close similarity of the Si-O bonded interactions observed for a variety of hydroxyacid silicate molecules and a large number of silicate crystals. The bond critical point and local energy density properties of the electron density distribution indicate that the bond is intermediate in character between Al-O and P-O bonded interations rather than being ionic or covalent.

  10. Crystal structure of laser-induced subsurface modifications in Si

    DOE PAGES

    Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; ...

    2015-06-04

    Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystalmore » structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.« less

  11. Lateral photovoltaic measurements of electrical properties of SiAl:H/n-type Si structures

    NASA Astrophysics Data System (ADS)

    Shikama, T.; Okada, Y.; Hamana, T.; Niu, H.; Matsuda, T.; Takai, M.

    1984-12-01

    A modified lateral photovoltaic method is developed to measure p-n junction characteristics as exemplified by those of the junction formed by an amorphous-microcrystalline SiAl:H film on a crystal Si. The junction is biased at a forward voltage, V, by uniform irradiation by a He-Ne/laser beam, and the lateral-photovoltage (LPV) induced by the laser beam is measured with a lock-in amplifier for various V. It is shown that I0 and m in the I-V equation of the junction, I = I0 exp (qV/mkT - 1), are determined with high accuracy when the leakage conductance at the periphery of a junction is reduced to a negligible value. If the leakage conductance is not negligible, its existence is confirmed by the LPV method.

  12. Luminescence of Ni2+ and Cr3+ centres in MgSiO3 enstatite crystals

    NASA Astrophysics Data System (ADS)

    Moncorgé, R.; Bettinelli, M.; Guyot, Y.; Cavalli, E.; Capobianco, J. A.; Girard, S.

    1999-09-01

    Emission and excitation spectra and luminescence decay curves of enstatite MgSiO3 single crystals nominally doped with Ni and Cr have been measured at temperatures down to 10 K. For all the crystals under investigation, the emission band peaking at about 1520 nm is assigned to the 3T2icons/Journals/Common/to" ALT="to" ALIGN="TOP"/> 3A2 transition of octahedral Ni2+ centres, whilst the luminescence around 800 nm is assigned to the 4T2icons/Journals/Common/to" ALT="to" ALIGN="TOP"/> 4A2 transition of octahedral Cr3+ centres. Chemical analysis has confirmed the presence of Ni impurities in the nominally Cr doped crystals, and Cr impurities in the nominally Ni doped crystals. The peak stimulated emission cross section of the 1520 nm emission of Ni2+ is 3 × 10-20 cm2.

  13. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

    SciTech Connect

    Taboada, A. G. Kreiliger, T.; Falub, C. V.; Känel, H. von; Meduňa, M.; Salvalaglio, M.; Miglio, L.; Isa, F.; Barthazy Meier, E.; Müller, E.; Isella, G.

    2016-02-07

    Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

  14. Crystal structure and physical properties of the novel ternary intermetallics URuSi 3- x and U 3Ru 2Si 7

    NASA Astrophysics Data System (ADS)

    Pasturel, M.; Pikul, A. P.; Potel, M.; Roisnel, T.; Tougait, O.; Noël, H.; Kaczorowski, D.

    2010-08-01

    Two novel ternary intermediate phases, namely URuSi 3- x ( x=0.11) and U 3Ru 2Si 7 were found in the Si-rich part of the U -Ru -Si phase diagram. Single crystal X-ray diffraction measurements, carried out at room temperature, indicated that URuSi 3- x crystallizes in its own tetragonal type structure (space group P4/ nmm, no. 129; unit cell parameters: a=12.108(1) Å and c=9.810(1) Å), being a derivative of the BaNiSn 3-type structure. U 3Ru 2Si 7 adopts in turn a disordered orthorhombic La 3Co 2Sn 7-type structure (space group Cmmm, no. 65; unit cell parameters: a=4.063(1) Å, b=24.972(2) Å and c=4.072(1) Å). As revealed by magnetization, electrical resistivity and specific heat measurements, both compounds order magnetically at low temperatures. Namely URuSi 3- x is a ferromagnet with TC=45 K, and U 3Ru 2Si 7 shows ferrimagnetic behavior below TC=29 K.

  15. Precursor Routes to Complex Ternary Intermetallics: Single-Crystal and Microcrystalline Preparation of Clathrate-I Na8Al8Si38 from NaSi + NaAlSi.

    PubMed

    Dong, Yongkwan; Chai, Ping; Beekman, Matt; Zeng, Xiaoyu; Tritt, Terry M; Nolas, George S

    2015-06-01

    Single crystals of the ternary clathrate-I Na8Al8Si38 were synthesized by kinetically controlled thermal decomposition (KCTD), and microcrystalline Na8Al8Si38 was synthesized by spark plasma sintering (SPS) using a NaSi + NaAlSi mixture as the precursor. Na8AlxSi46-x compositions with x ≤ 8 were also synthesized by SPS from precursor mixtures of different ratios. The crystal structure of Na8Al8Si38 was investigated using both Rietveld and single-crystal refinements. Temperature-dependent transport and UV/vis measurements were employed in the characterization of Na8Al8Si38, with diffuse-reflectance measurement indicating an indirect optical gap of 0.64 eV. Our results indicate that, when more than one precursor is used, both SPS and KCTD are effective methods for the synthesis of multinary inorganic phases that are not easily accessible by traditional solid-state synthesis or crystal growth techniques.

  16. Study of hydrogen states in a-Si:H films, dehydrogenization treatments and influence of hydrogen on nanosecond pulse laser crystallization of a-Si:H

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Galkov, M. S.; Safronova, N. A.; Kamaev, G. N.; Antonenko, A. H.; Kochubey, S. A.

    2014-12-01

    Structures based on hydrogenated amorphous silicon (a-Si:H) films deposited on various substrates (including not refractory ones) are widely applied in giant microelectronics devices, such as flat panel displays based on active matrix thin-film transistors and solar cells. The a-Si:H films produced by plasma enhanced chemical vapor deposition (PECVD) methods, contain up to 40% atoms of hydrogen. The influence of hydrogen on the optical and electrical properties of the films and their degradation is important. Therefore, the development of express and non-destructive methods for control of the hydrogen concentration in thin films continues to be an actual task to date. Previously, from a comparative analysis of infrared (IR) spectroscopy and Raman scattering spectroscopy, the ratios of the integral intensities of Raman peaks due to scattering by vibrations of the Si-H and Si-H2 bonds to the intensity of Raman peak of the Si-Si bonds were experimentally determined. Knowing these ratios, it is possible to measure the hydrogen concentration, moreover, separately in Si-H and Si-H2 states. Proposed quantitative method for determining of the hydrogen concentration from analysis of the Raman spectra is an express, non-destructive method and can be used for "in situ" monitoring of the hydrogen. The aim of this work was to determine the polarization dependence of Raman scattering by stretching vibrations of Si-H bonds and find the form of the corresponding Raman tensors. From analysis of Raman intensities in different polarizations the Raman tensors for Si-H and Si-H2 bonds were determined. The regimes for dehydrogenization of thick (up to 1 micron) a-Si:H films were found. The nanosecond pulse XeCl laser with wavelength of 308 nm and pulse duration of 10 ns was used for pulse crystallization of as-deposited and dehydrogenated films. As it was studied earlier, for a-Si:H films with high hydrogen concentration, the threshold for crystallization is very close to threshold of

  17. Crystal structure and magnetic behavior in CeAu2Si2 and CeAu4Si2

    NASA Astrophysics Data System (ADS)

    Palasyuk, Andriy M.; Corbett, John D.; Sefat, Athena S.; Canfield, Paul C.

    2007-03-01

    Interest in Ce-based compounds of systems like CeCu2Si2, CePd2Si2 and CeRu2Si2 has attracted much interest due to magnetic ordering, heavy Fermion behavior and superconductivity. This work is a comparative study of crystal structure and properties of CeAuxSi2 flux-grown crystals with x=2, 4. For CeAuxSi2 system, we have studied structure and anisotropic field- and temperature-dependent magnetization M(H, T). The single-crystal x-ray data indicate that CeAu4Si2 has CeRe4Si2-type structure and is orthorhombic (Cmmm) and CeAu2Si2 is tetragonal (I4/mmm). Although there is an extra layer of Au atoms in the CeAu4Si2 structure the magnetic ordering temperatures of CeAu2Si2and CeAu4Si2 are remarkably similar. In this work we will examine and discuss the similarities and differences between the thermodynamic, transport and structural properties of these related materials.

  18. Charge transfer of single laser crystallized intrinsic and phosphorus-doped Si-nanocrystals visualized by Kelvin probe force microscopy

    SciTech Connect

    Xu, Jie; Xu, Jun Lu, Peng; Shan, Dan; Li, Wei; Chen, Kunji

    2014-10-07

    Isolated intrinsic and phosphorus doped (P-doped) Si-nanocrystals (Si-NCs) on n- and p-Si substrates are fabricated by excimer laser crystallization techniques. The formation of Si-NCs is confirmed by atomic force microscopy (AFM) and conductive AFM measurements. Kelvin probe force microscopy (KPFM) is then carried out to visualize the trapped charges in a single Si-NC dot which derives from the charge transfer between Si-NCs and Si substrates due to their different Fermi levels. The laser crystallized P-doped Si-NCs have a similar Fermi level around the mid-gap to the intrinsic counterparts, which might be caused by the inactivated impurity atoms or the surface states-related Fermi level pinning. A clear rise of the Fermi level in P-doped Si-NCs is observed after a short time thermal annealing treatment, indicating the activation of dopants in Si-NCs. Moreover, the surface charge quantity can be estimated using a simple parallel plate capacitor model for a quantitative understanding of the KPFM results at the nanoscale.

  19. Comparison of crystallization kinetics in a-Si/Cu and a-Si/Al bilayer recording films under thermal annealing and pulsed laser irradiation

    NASA Astrophysics Data System (ADS)

    Her, Yung-Chiun; Chen, Chih-Wei; Wu, Chun-Lin

    2006-06-01

    Under thermal annealing, the crystallization temperatures of a-Si in a-Si/Cu and a-Si/Al bilayer recording films were significantly reduced to around 485 and 357 °C, respectively, and the activation energies for crystallization were reduced to about 3.3 eV. The formation of Cu3Si phase prior to crystallization of a-Si was found to occur at around 175 °C in a-Si/Cu, while no Al silicide was observed in a-Si/Al before crystallization of a-Si. The reaction exponents for a-Si/Cu and a-Si/Al were determined to be around 1.8 and 1.6, respectively, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of grain growth. Under pulsed laser irradiation, the precipitation of Cu3Si phases and crystallization of a-Si were observed in a-Si/Cu, while the crystallization and reamorphization of a-Si took place sequentially in a-Si/Al. The reaction exponents for a-Si/Cu and a-Si/Al, determined to be about 2.0 and 2.2, respectively, are slightly higher than those under thermal annealing, indicating that the crystallization processes of a-Si/Cu and a-Si/Al under pulsed laser irradiation are similar to those under thermal annealing. However, the decrease of nucleation rate with the progress of grain growth is slower. At the same time, the activation energies for crystallization of a-Si/Cu and a-Si/Al, estimated to be about 0.18 and 0.22 eV, respectively, are nearly an order of magnitude lower than those under thermal annealing. This may be explained by the explosive crystallization of a-Si by mechanical impact, with a high power pulsed laser.

  20. Calcium aluminate silicate Ca2Al2SiO7 single crystal applicable to piezoelectric sensors at high temperature

    NASA Astrophysics Data System (ADS)

    Takeda, Hiroaki; Hagiwara, Manabu; Noguchi, Hiroaki; Hoshina, Takuya; Takahashi, Tomoko; Kodama, Nobuhiro; Tsurumi, Takaaki

    2013-06-01

    Ca2Al2SiO7 (CAS) bulk single crystals were grown by the Czochralski method. Material constants of the crystal were determined over the driving temperature range of a typical combustion pressure sensor. The electrical resistivity at 800 °C was found to be of the order of 108 Ωcm. We constructed a measurement system for the direct piezoelectric effect at high temperature, and characterized the crystals in a simulated engine cylinder combustion environment. Output charge signal against applied stress was detected at 700 °C. These observations suggest that CAS crystals are superior candidate materials for high temperature for stress sensing.

  1. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-04-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  2. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-01-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  3. Crystallization and Transport Properties of Amorphous Cr-Si Thin Film Thermoelectrics

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Burkov, A. T.; Schumann, J.

    2014-06-01

    We studied the thermoelectric properties, crystallization, and stability of amorphous and nanocrystalline states in Cr-Si composite films. Amorphous films, prepared by magnetron sputtering, were transformed into the nanocrystalline state by annealing with in situ thermopower and electrical resistivity measurements. We have found that the amorphous state is stable in these film composites to about 550 K. Prior to crystallization, the amorphous films undergo a structural relaxation, detected by peculiarities in the temperature dependences of the transport properties, but not visible in x-ray or electron diffraction. The magnitude and temperature dependences of electrical conductivity and thermopower indicate that electron transport in the amorphous films is through extended states. The amorphous films are crystallized at annealing temperatures above 550 K into a nanocrystalline composite with an average grain size of 10-20 nm.

  4. Measurable characteristics of lysozyme crystal growth

    NASA Technical Reports Server (NTRS)

    Gorti, Sridhar; Forsythe, Elizabeth L.; Pusey, Marc L.

    2005-01-01

    The behavior of protein crystal growth is estimated from measurements performed at both the microscopic and molecular levels. In the absence of solutal flow, it was determined that a model that balances the macromolecular flux toward the crystal surface with the flux of the crystal surface well characterizes crystal growth observed using microscopic methods. Namely, it was determined that the model provides accurate estimates for the crystal-growth velocities upon evaluation of crystal-growth measurements obtained in time. Growth velocities thus determined as a function of solution supersaturation were further interpreted using established deterministic models. From analyses of crystal-growth velocities, it was found that the mode of crystal growth varies with respect to increasing solution supersaturation, possibly owing to kinetic roughening. To verify further the hypothesis of kinetic roughening, crystal growth at the molecular level was examined using atomic force microscopy (AFM). From the AFM measurements, it was found that the magnitude of surface-height fluctuations, h(x), increases with increasing solution supersaturation. In contrast, the estimated characteristic length, xi, decreases rapidly upon increasing solution supersaturation. It was conjectured that the magnitude of both h(x) and xi could possibly determine the mode of crystal growth. Although the data precede any exact theory, the non-critical divergence of h(x) and xi with respect to increasing solution supersaturation was nevertheless preliminarily established. Moreover, approximate models to account for behavior of both h(x) and xi are also presented.

  5. Coherent effects of high-energy particles in a graded Si(1-x)Ge(x) crystal.

    PubMed

    Bagli, E; Bandiera, L; Guidi, V; Mazzolari, A; De Salvador, D; Maggioni, G; Berra, A; Lietti, D; Prest, M; Vallazza, E; Abrosimov, N V

    2013-04-26

    A graded Si(1-x)Ge(x) crystal has been manufactured for operation with high-energy protons to excite coherent interactions of the particles with the crystal such as channeling and volume reflection. The crystal had the shape of a parallelepiped though its (111) atomic planes were curved at a radius of 25.6 m because of the graded Ge content. The crystal was exposed to a 400  GeV/c proton beam at the external lines of CERN Super Proton Synchrotron to probe its capability to steer high-energy particles. Measured deflection efficiency was 62.0% under planar channeling and 96.0% under volume reflection. Such values are critically compared to their counterparts for a standard bent Si crystal under peer conditions. A Monte Carlo simulation of the dynamics of channeled and volume reflected particles in a graded crystal including the effect of Ge impurities and of lattice dislocations has been carried out. We found that the effect of crystal imperfections spoiled the efficiency of channeling while it negligibly affected the performance of volume reflection. We finally propose the usage of the graded crystal as a primary scatterer to aid halo collimation for the new generation of hadronic machines. As a unique feature, a properly cut graded crystal circumvents the problem of the miscut angle, which is currently a severe limitation for implementation of crystal-assisted collimation.

  6. Infrared spectrometric measurement of impurities in highly enriched 'Si28'

    NASA Astrophysics Data System (ADS)

    Zakel, S.; Wundrack, S.; Niemann, H.; Rienitz, O.; Schiel, D.

    2011-04-01

    Within the scope of re-determining the Avogadro constant, the content of impurities in ultra-pure, mono-isotopically enriched silicon 'Si28' was measured by infrared spectrometry. The calibration factors required for the calculation of the concentrations from the maximum absorption coefficients had to be determined in this context for the isotopically enriched material. For this purpose a model was prepared, which enables conversion of the factors for Si with natural isotopic abundance. On the basis of these results, the concentrations of the three most decisive impurities in the enriched material were determined. These are oxygen atoms on interstitial sites and substituting carbon and boron atoms which occupy silicon sites. Whereas carbon and oxygen were measured in accordance with standardized procedures modified for the particular metrological use, the absorption measurement of the boron was carried out differently to the conventional standard. The concentrations determined for the three types of crystal impurities are high enough to make a correction of the lattice parameter for the 'Si28' material necessary.

  7. SiPM optical crosstalk amplification due to scintillator crystal: effects on timing performance.

    PubMed

    Gola, Alberto; Ferri, Alessandro; Tarolli, Alessandro; Zorzi, Nicola; Piemonte, Claudio

    2014-07-07

    For a given photon detection efficiency (PDE), the primary, Poisson distributed, dark count rate of the detector (DCR0) is one of the most limiting factors affecting the timing resolution of a silicon photomultiplier (SiPM) in the scintillation light readout. If the effects of DCR0 are removed through a suitable baseline compensation algorithm or by cooling, it is possible to clearly observe another phenomenon that limits the PDE, and thus the timing resolution of the detector. It is caused by the optical crosstalk of the SiPM, which is significantly increased by the presence of the scintillator. In this paper, we describe this phenomenon, which is also easily observed from the reverse I-V curve of the device, and we relate it to the measured coincidence resolving time in 511 keV γ-ray measurements. We discuss its consequences on the SiPM design and, in particular, we observe that there is an optimal cell size, dependent on both SiPM and crystal parameters, that maximizes the PDE in presence of optical crosstalk. Finally, we report on a crosstalk simulator developed to study the phenomenon and we compare the simulation results obtained for different SiPM technologies, featuring different approaches to the reduction of the crosstalk.

  8. Electroactive complex in thermally treated Ge-Si crystals

    SciTech Connect

    Azhdarov, G. Kh.; Zeynalov, Z. M.; Zakhrabekova, Z. M.; Kyazimova, A. I.

    2010-05-15

    It is shown by Hall measurements that quenching complexly doped Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.20) crystals from 1050-1080 K leads to the formation of additional electroactive acceptor centers in them. The activation energy of these centers increases linearly with an increase in the silicon content in the crystal and is described by the relation E{sub k}{sup x} = (52 + 320x) meV. Annealing these crystals at 550-570 K removes the additional acceptor levels. It is established that the most likely model for the additional electroactive centers is a pair composed of substituent copper and aluminum atoms (Cu{sub s}Al{sub s}) or interstitial copper and substituent aluminum atoms (Cu{sub i}Al{sub s}). It is shown that the generation of additional deep acceptor levels must be taken into account when using the method of precise doping of Ge{sub 1-x}Si{sub x} crystals with copper.

  9. SiGe crystal growth aboard the international space station

    NASA Astrophysics Data System (ADS)

    Kinoshita, K.; Arai, Y.; Tsukada, T.; Inatomi, Y.; Miyata, H.; Tanaka, R.

    2015-05-01

    A silicon germanium mixed crystal Si1-xGex (x~0.5) 10 mm in diameter and 9.2 mm in length was grown by the traveling liquidus-zone (TLZ) method in microgravity by suppressing convection in a melt. Ge concentration of 49.8±2.5 at% has been established for the whole of the grown crystal. Compared with the former space experiment, concentration variation in the axial direction increased from ±1.5 at% to ±2.5 at% although average Ge concentration reached to nearly 50 at%. Excellent radial Ge compositional uniformity 52±0.5 at% was established in the region of 7-9 mm growth length, where axial compositional uniformity was also excellent. The single crystalline region is about 5 mm in length. The interface shape change from convex to concave is implied from both experimental results and numerical analysis. The possible cause of increase in concentration variation and interface shape change and its relation to the two-dimensional growth model are discussed.

  10. Electron microscopy study of Ni induced crystallization in amorphous Si thin films

    SciTech Connect

    Radnóczi, G. Z.; Battistig, G.; Pécz, B.; Dodony, E.; Vouroutzis, N.; Stoemenos, J.; Frangis, N.; Kovács, A.

    2015-02-17

    The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.

  11. Design of Sequential Lateral Solidification Crystallization Method for Low Temperature Poly-Si Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Park, Ji-Yong; Park, Hye-Hyang; Lee, Ki-Yong; Chung, Ho-Kyoon

    2004-04-01

    Sequential lateral solidification (SLS) is known as a promising method for making low-temperature poly-Si thin film transistors (LTPS TFT) with superior performance for the fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display (LCD) and TFT organic light Emitting diode (OLED). In this work we studied the dependence of TFT characteristics on SLS poly-Si grain width and suggested the methods of designing SLS mask pattern to achieve uniform TFT performance. We varied the width of the poly-Si grain by employing the 2-shot SLS mask pattern with different overlaps between the 1st and 2nd laser pulses. The width of the poly-Si grain decreased with decreasing the overlap. However, the measured TFT characteristics revealed that the width of the poly-Si grain negligibly influences the device properties. We could achieve the TFT mobility of approximately 350 cm2/V\\cdots for the overlap of not less than 1 μm. We suggested that the SLS mask pattern (x, y) should be designed such that 2+y≤ x<2 (C-SLG distance) and y > (optical resolution), where x is the spacing of the laser-absorbed region and y is the spacing of the laser-nonabsorbed region on the substrate.

  12. Synthesis and crystal growth of Mg2Si by the liquid encapsulated vertical gradient freezing method

    NASA Astrophysics Data System (ADS)

    Nakagawa, Reo; Katsumata, Hiroshi; Hashimoto, Satoshi; Sakuragi, Shiro

    2015-08-01

    The synthesis of Mg2Si bulk crystals was performed by the vertical gradient freezing method using a KCl-MgCl2 eutectic liquid encapsulant. Stoichiometric polycrystalline Mg2Si bulk crystals were successfully grown by changing the composition ratio of starting Mg and Si powders (Mg/Si) from 2.0 to 3.5. A chemical reaction between Mg2Si and the crucible materials was inhibited using encapsulant materials, and the contamination by K or Cl originating from the encapsulant materials was not detected in almost all the samples. However, Mg evaporation could not be prevented completely during the synthesis and crystal growth. The optical band-gap energy of Mg2Si bulk crystals became minimal (0.79 eV) at a Mg/Si ratio of 2.5, at which the maximum electron mobility of 202 cm2·V-1·s-1 was obtained. These results indicate that the composition ratio of Mg/Si = 2.5 for starting Mg and Si powders was optimal for synthesizing Mg2Si bulk crystals with high crystalline quality.

  13. Morphology of SiO2 films as a key factor in alignment of liquid crystals with negative dielectric anisotropy

    PubMed Central

    Marino, Antigone; Otón, Eva; Bennis, Noureddine; Otón, Josè Manuel

    2016-01-01

    Control of liquid crystal (LC) orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN) displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles. PMID:28144524

  14. Morphology of SiO2 films as a key factor in alignment of liquid crystals with negative dielectric anisotropy.

    PubMed

    Tkachenko, Volodymyr; Marino, Antigone; Otón, Eva; Bennis, Noureddine; Otón, Josè Manuel

    2016-01-01

    Control of liquid crystal (LC) orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN) displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles.

  15. Luminescence and scintillation timing characteristics of (LuxGd2-x)SiO5:Ce single crystals

    NASA Astrophysics Data System (ADS)

    Yawai, Nattasuda; Chewpraditkul, Warut; Sakthong, Ongsa; Chewpraditkul, Weerapong; Wantong, Kriangkrai; Szczesniak, Tomasz; Swiderski, Lukasz; Moszynski, Marek; Sidletskiy, Oleg

    2017-02-01

    The luminescence and scintillation characteristics of cerium-doped lutetium-gadolinium orthosilicate (LuxGd2-xSiO5:Ce; x=0, 0.8, 1.8) single crystals were investigated. At 662 keV γ-rays, the light yield of 29,800±3000 ph MeV-1 obtained for Lu1.8Gd0.2SiO5:Ce is higher than that of 20,200±2000 and 11,800±1200 ph MeV-1 obtained for Lu0.8Gd1.2SiO5:Ce and Gd2SiO5:Ce, respectively. The fast component decay time of 32, 18 and 17 ns was measured in the scintillation decay of Gd2SiO5:Ce, Lu0.8Gd1.2SiO5:Ce and Lu1.8Gd0.2SiO5:Ce, respectively. The coincidence time spectra for 511 keV annihilation quanta were measured in reference to a fast BaF2 detector and time resolution was discussed in terms of a number of photoelectrons and decay time of the fast component. The mass attenuation coefficient for studied crystals at 60 and 662 keV γ-rays was also evaluated and discussed.

  16. Truncated tetrahedron seed crystals initiating stereoaligned growth of FeSi nanowires.

    PubMed

    Kim, Si-in; Yoon, Hana; Seo, Kwanyong; Yoo, Youngdong; Lee, Sungyul; Kim, Bongsoo

    2012-10-23

    We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an m-Al(2)O(3) substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth is initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs via seed crystals could be employed to heteroepitaxial growth of other compound NWs.

  17. Crystallization behavior of PA6/SiO{sub 2} organic-inorganic hybrid material

    SciTech Connect

    Wang Hualin; Shi Tiejun . E-mail: stjdean@hfut.edu.cn; Yang Shanzhong; Hang Guopei

    2006-02-02

    Poly 2-hydroxy propylmethacrylate-methyl methacrylate/SiO{sub 2} (PHPMA-MMA/SiO{sub 2}), an active composite was used to synthesize polyamide-6/SiO{sub 2} (PA6/SiO{sub 2}) organic-inorganic hybrid materials via blending method. X-ray diffraction analysis (XRD) results showed that the addition of PHPMA-MMA/SiO{sub 2} composite induced PA6 to transit from {alpha} to {gamma} crystal form. The nonisothermal crystallization kinetics of PA6 and PA6/SiO{sub 2} hybrid materials was investigated by differential scanning calorimetry (DSC). Jeziorny method derived from Avrami analysis and a method developed by Liu were employed to describe the nonisothermal crystallization process of PA6 and PA6/SiO{sub 2} hybrid materials. Based on our experimental data, if the relative degree of crystallinity was approximately 60% or more, the Jeziorny method was not valid to describe the nonisothermal crystallization process, while Liu method was successful to describe the whole nonisothermal crystallization process. When X(t) was below about 60%, the crystallization rates of PA6 and PA6/SiO{sub 2} hybrid materials were very approximate, but when X(t) was approximately 60% or more, the crystallization rate of PA6 was quicker than that of PA6/SiO{sub 2} hybrid materials. Moreover, the addition of PHPMA-MMA/SiO{sub 2} composite decreased the crystallization activation energy {delta}E calculated by Kissinger equation because of the {gamma} transition.

  18. Li2B12Si2: the first ternary compound in the system Li/B/Si: synthesis, crystal structure, hardness, spectroscopic investigations, and electronic structure.

    PubMed

    Vojteer, Natascha; Schroeder, Melanie; Röhr, Caroline; Hillebrecht, Harald

    2008-01-01

    We present the synthesis, crystal structure, hardness, IR/Raman and UV/Vis spectra, and FP-LAPW calculations of the electronic structure of Li(2)B(12)Si(2), the first ternary compound in the system Li/B/Si. Yellow, transparent single crystals were synthesized from the elements in tin as solvent at 1500 degrees C in h-BN crucibles in arc-welded Ta ampoules. Li(2)B(12)Si(2) crystallizes orthorhombic in the space group Cmce (no. 64) with a=6.1060(6), b=10.9794(14), c=8.4050(8) A, and Z=4. The crystal structure is characterized by a covalent network of B(12) icosahedra connected by Si atoms and Li atoms located in interstitial spaces. The structure is closely related to that of MgB(12)Si(2) and fulfils the electron-counting rules of Wade and Longuet-Higgins. Measurements of Vickers (H(V)=20.3 GPa) and Knoop microhardness (H(K)=20.4 GPa) revealed that Li(2)B(12)Si(2) is a hard material. The band gap was determined experimentally and calculated by theoretical means. UV/Vis spectra revealed a band gap of 2.27 eV, with which the calculated value of 2.1 eV agrees well. The IR and Raman spectra show the expected oscillations of icosahedral networks. Theoretical investigations of bonding in this structure were carried out with the FP-LAPW method. The results confirm the applicability of simple electron-counting rules and enable some structural specialties to be explained in more detail.

  19. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

    SciTech Connect

    Gu, Z; Du, Li; Edgar, J H; Payzant, E Andrew; Walker, Larry R; Liu, R; Engelhard, M H

    2005-01-01

    AlN-SiC alloy crystals, with a thickness greater than 500μm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8 or 3.68 ) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlNSiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). Xray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 10^6cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

  20. Plastically deformed region around indentations on Si angle crystal

    NASA Astrophysics Data System (ADS)

    Yoshioka, M.

    1994-12-01

    Expansion of a hemispherical shell by inner pressure has been widely applied for the model of the deformation by an indentation on a flat surface; however, the deformed region is not necessarily spherically symmetric, especially in anisotropic materials such as single crystals. Therefore, whether the spherical model is applicable in an indentation process for objective materials must always be kept in mind. Indentations have been made on the (111) surface of silicon crystal at various temperatures. The three-dimensional shape of the plastically deformed region was experimentally measured by means of an etching technique and its difference from the hemisphere was observed. It was never spherical but much more complicated, similar to a bottle gourd. The slip mechanism, which resulted in the observed shape of the plastic region, is discussed further. The plastic region was analytically obtained also on the assumption that the stress distribution was spherically symmetrical. The result is approximately in accordance with the observed shape. It is therefore concluded that the stress distribution is nearly spherical although the plastic region is far from it. The yield strength of silicon crystals and their temperature dependence were obtained based on the spherical model.

  1. Enhancement of luminescence from Er-doped Si by photonic crystal gradient double-heterostructuremicrocavity

    NASA Astrophysics Data System (ADS)

    Wang, Y.; An, J. M.; Wu, Y. D.; Hu, X. W.

    2017-03-01

    We experimentally demonstrate efficient enhancements of luminescence at wavelength of 1550 nm from two-dimensional (2D)-slab hexagonal photonic crystal (PC) non-airbridge and air bridge gradient double-heterostructure microcavities with Er/O co-implanted silicon (Si) as light emitters on silicon-on-insulator (SOI) wafer. The maximum measured Q-factor of 6284 of airbridge cavity has been achieved at the pumping power of 1.5 mW at room temperature. The airbridge cavity has stronger enhancement, but weaker heat dissipation than the non-airbridge one. The obvious red-shift and degraded Q-factor of resonant peak are present with the pumping power increasing. The resonant peak is observed to shift depending on the structural parameters of PC, which indicates a possible method to control the wavelength of enhanced luminescence for Si-based light emitters based on PC microcavity.

  2. Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

    NASA Technical Reports Server (NTRS)

    Choi, Doo Jin; Scott, William D.

    1987-01-01

    The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

  3. Si3N4 Optomechanical Crystals in the Resolved-sideband Regime

    DTIC Science & Technology

    2014-01-27

    Si3N4 optomechanical crystals in the resolved-sideband regime M. Davanço,1,2,a) S. Ates,1,3,b) Y. Liu,1,3,c) and K. Srinivasan1 1Center for...November 2013; accepted 13 December 2013; published online 27 January 2014) We demonstrate sideband-resolved Si3N4 optomechanical crystals supporting...which leads to reduced Qo for large N. As an alternative to Si, Si3N4 is a potentially advanta- geous material for OMCs: it does not exhibit two-photon

  4. Characterization of Surface Features in Detached Grown GeSi Crystals

    NASA Technical Reports Server (NTRS)

    Cobb, S. D.; Volz, M. P.; Schweizer, M.; Kaiser, N.; Carpenter, P. K.; Szofran, F. R.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    The growth of detached crystals by the Bridgman technique, in which the growing crystal is not in contact with the crucible wall, has been observed both on earth and in microgravity conditions. At present, the mechanisms contributing to the detachment are not completely understood and until recently detachment has not been reproducibly obtained. It is commonly understood that the main factors that promote the occurrence of detached growth include: high contact angle between the melt and the crucible material, high growth angle, and a pressure difference between the annular gap around the solid below the melt and the volume above the melt along the meniscus. These parameters were varied in Bridgman growth experiments to determine the conditions required to achieve detached growth terrestrially in Ge and GeSi alloys. These experiments are in preparation for experiments on the International Space Station (ISS). The detailed objectives of the flight experiments and a description of the growth methods employed are the subject of another presentation at this Congress. Detached crystals were achieved repeatedly in pyrolytic boron nitride ampoules when a pressure difference was employed. All crystals, except for those grown in fused silica ampoules, were easily removed from their containers; however, this fact alone is not sufficient to infer detached growth. Detachment was verified by comparing profilometer measurements of the radius of the samples with observations of the sample surfaces using optical and electron microscopy. The surfaces of the attached areas of the crystals had the same shape and surface texture as the interior crucible wall. Regions of detached growth contained many unique features and crystal facets could usually be observed. Several of these surface features have been correlated with mechanisms of detachment or free surface growth in general and others to processing events or conditions. These results will be compared with observations of surface

  5. Determination of the Avogadro Constant by Counting the Atoms in a Si28 Crystal

    NASA Astrophysics Data System (ADS)

    Andreas, B.; Azuma, Y.; Bartl, G.; Becker, P.; Bettin, H.; Borys, M.; Busch, I.; Gray, M.; Fuchs, P.; Fujii, K.; Fujimoto, H.; Kessler, E.; Krumrey, M.; Kuetgens, U.; Kuramoto, N.; Mana, G.; Manson, P.; Massa, E.; Mizushima, S.; Nicolaus, A.; Picard, A.; Pramann, A.; Rienitz, O.; Schiel, D.; Valkiers, S.; Waseda, A.

    2011-01-01

    The Avogadro constant links the atomic and the macroscopic properties of matter. Since the molar Planck constant is well known via the measurement of the Rydberg constant, it is also closely related to the Planck constant. In addition, its accurate determination is of paramount importance for a definition of the kilogram in terms of a fundamental constant. We describe a new approach for its determination by counting the atoms in 1 kg single-crystal spheres, which are highly enriched with the Si28 isotope. It enabled isotope dilution mass spectroscopy to determine the molar mass of the silicon crystal with unprecedented accuracy. The value obtained, NA=6.02214078(18)×1023mol-1, is the most accurate input datum for a new definition of the kilogram.

  6. Determination of the Avogadro constant by counting the atoms in a 28Si crystal.

    PubMed

    Andreas, B; Azuma, Y; Bartl, G; Becker, P; Bettin, H; Borys, M; Busch, I; Gray, M; Fuchs, P; Fujii, K; Fujimoto, H; Kessler, E; Krumrey, M; Kuetgens, U; Kuramoto, N; Mana, G; Manson, P; Massa, E; Mizushima, S; Nicolaus, A; Picard, A; Pramann, A; Rienitz, O; Schiel, D; Valkiers, S; Waseda, A

    2011-01-21

    The Avogadro constant links the atomic and the macroscopic properties of matter. Since the molar Planck constant is well known via the measurement of the Rydberg constant, it is also closely related to the Planck constant. In addition, its accurate determination is of paramount importance for a definition of the kilogram in terms of a fundamental constant. We describe a new approach for its determination by counting the atoms in 1 kg single-crystal spheres, which are highly enriched with the 28Si isotope. It enabled isotope dilution mass spectroscopy to determine the molar mass of the silicon crystal with unprecedented accuracy. The value obtained, NA = 6.022,140,78(18) × 10(23) mol(-1), is the most accurate input datum for a new definition of the kilogram.

  7. In situ observation of fractal growth during a-Si crystallization in a Cu3Si matrix

    NASA Astrophysics Data System (ADS)

    Russell, S. W.; Li, Jian; Mayer, J. W.

    1991-11-01

    We observe that the crystallization of amorphous Si thin films in contact with a copper silicide layer occurs at a temperature of around 485 °C in the form of dendrites with a fractal dimension of 1.7. The in situ observation of both the silicidation reaction, forming Cu3Si, and the subsequent crystallization of the remaining amorphous silicon in the silicide matrix, were observed during annealing in a transmission electron microscope. We estimate the radial growth rate of these crystallites at 5 nm/s at this temperature. The fractal dimension of the dendrites indicates a growth process similar to one known as diffusion-limited aggregation.

  8. Measuring and predicting the diffraction properties of cylindrically bent potassium acid phthalate, KAP(001), crystals

    NASA Astrophysics Data System (ADS)

    Haugh, M. J.; Jacoby, K. D.

    2017-02-01

    This report presents the results from measuring the X-ray diffraction properties of a curved potassium acid phthalate (KAP(001)) spectrometer crystal using two measurement methods. One method used a diode type X-ray source and a dual goniometer analysis system, utilizing a flat, perfect KAP(001) crystal as the monochromator. The second method used a synchrotron source and dual crystal Si(111) monochromator. Bent crystals are used in X-ray spectrometers as dispersion elements. These crystals are bent into a circular cylinder section, and this bending can alter the rocking curve properties. The crystal rocking curves were measured for spectral energies ranging from 1250 to 4500 eV. A multi-lamellar model was compared to the measurements and showed good quantitative agreement. This provides a valuable tool for predicting the changes to the KAP (001) for any radius of curvature when the crystal is bent into a cylindrical section.

  9. Glass formation and crystallization in high-temperature glass-ceramics and Si3N4

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III

    1991-01-01

    The softening of glassy grain boundaries in ceramic matrix composites and Si3N4 at high temperatures reduces mechanical strength and the upper-use temperature. By crystallizing this glass to a more refractory crystalline phase, a material which performs at higher temperatures may result. Three systems were examined: a cordierite composition with ZrO2 as a nucleating agent; celsian compositions; and yttrium silicate glasses both in bulk and intergranular in Si3N4. For the cordierite compositions, a series of metastable phases was obtained. The crystallization of these compositions was summarized in terms of metastable ternary isothermal sections. Zircon formed at the expense of ZrO2 and spinel. In SiC composites, the transformations were slower. In celsian, two polymorphs were crystallized. One phase, hexacelsian, which always crystallized, even when metastable, had an undesirable volume change. The other phase, celsian, was very difficult to crystallize. In yttrium silicate bulk glasses, similar in composition to the intergranular glass in Si3N4, a number of polymorphs of Y2Si2O7 were crystallized. The conditions under which these polymorphs formed are compared with crystallization in Si3N4.

  10. Liquid crystal quantitative temperature measurement technique

    NASA Astrophysics Data System (ADS)

    Lu, Wei; Wu, Zongshan

    2001-10-01

    Quantitative temperature measurement using wide band thermochromic liquid crystals is an “area” thermal measurement technique. This technique utilizes the feature that liquid crystal changes its reflex light color with variation of temperature and applies an image capturing and processing system to calibrate the characteristic curve of liquid crystal’s color-temperature. Afterwards, the technique uses this curve to measure the distribution of temperature on experimental model. In this paper, firstly, each part of quantitative temperature measurement system using liquid crystal is illustrated and discussed. Then the technique is employed in a long duration hypersonic wind tunnel, and the quantitative result of the heat transfer coefficient along laminar plate is obtained. Additionally, some qualitative results are also given. In the end, comparing the experimental results with reference enthalpy theoretical results, a conclusion of thermal measurement accuracy is drawn.

  11. Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization

    NASA Astrophysics Data System (ADS)

    Lindorf, M.; Rohrmann, H.; Span, G.; Raoux, S.; Jordan-Sweet, J.; Albrecht, M.

    2016-11-01

    While the process of metal induced crystallization (MIC) is widely used in the fabrication of thin film electronic devices, its application to the field of thermoelectrics is fairly new. Especially, its implementation in the field of the classic thermoelectric material SiGe could lead to a low cost approach by combining the benefits of low thermal budget, self-doping, and thin film and sputter deposition compatibility. In this work, samples consisting of SiGe/Al multilayers deposited on aluminum oxide based substrates have been prepared. Special emphasis was put on the ratio of Al to SiGe and the resulting changes in transport properties during annealing. On one hand, a certain amount of Al is needed to ensure a complete MIC process for the SiGe, but on the other hand, an excess of Al results in a metallic system with low thermoelectric efficiency. In-situ characterization during annealing of the samples was carried out via x-ray diffraction, electrical resistivity, and Seebeck measurements.

  12. Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopy

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. D.; Grunthaner, F. J.; Kaiser, W. J.

    1988-01-01

    A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

  13. Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

    SciTech Connect

    Preidel, V. Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C.

    2015-06-14

    Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

  14. Optically active zwitterionic lambda(5)Si,lambda(5)Si'-disilicates: syntheses, crystal structures, and behavior in aqueous solution.

    PubMed

    Theis, Bastian; Burschka, Christian; Tacke, Reinhold

    2008-01-01

    The zwitterionic lambda(5)Si,lambda(5)Si'-disilicates 1-8 were synthesized and characterized by solid-state and solution NMR spectroscopy. In addition, compounds 26 H(2)O, 32 CH(3)CN, 45/2 CH(3)CN, 6CH(3)OH, 7, and 8CH(3)OHCH(3)CN were studied by single-crystal X-ray diffraction. The optically active (Delta,Delta,R,R,R,R)-configured compounds 1-8 contain two pentacoordinate (formally negatively charged) silicon atoms and two tetracoordinate (formally positively charged) nitrogen atoms. One (ammonio)alkyl group is bound to each of the two silicon centers, and two tetradentate (R,R)-tartrato(4-) ligands bridge the silicon atoms. Although these lambda(5)Si,lambda(5)Si'-disilicates contain SiO(4)C skeletons, some of them display a remarkable stability in aqueous solution as shown by NMR spectroscopy and ESI mass spectrometry.

  15. A Semitransparent and Flexible Single Crystal Si Thin Film: Silicon on Nothing (SON) Revisited.

    PubMed

    Park, Sanghyun; Lee, Yong Hwan; Wi, Jung-Sub; Oh, Jihun

    2016-07-27

    Ultrathin single crystal Si films offer a versatile vehicle for high performance flexible and semitransparent electric devices due to their outstanding optoelectric and mechanical properties. Here, we demonstrate the formation of an ultrathin (100) single crystal Si film based on morphological evolution of nanoporous Si during high temperature annealing. Square arrays of cylindrical Si pores are formed by nanoimprint lithography and deep reactive etching and then subjected to annealing in hydrogen ambient. By controlling the aspect ratio of nanoporous Si, defect-free single crystal Si membranes with controlled thicknesses from 330 to 470 nm are formed on a platelike void after the annealing. In addition, we investigate the role of oxygen impurities in a hydrogen atmosphere on defect formation on a Si surface and eliminate the oxygen-related defects on Si by controlling gas phase diffusion of oxygen impurities during annealing in a conventional tube furnace. Finally, we demonstrate the transfer of a defect-free, flexible, and wafer scale Si membrane with thickness of 470 nm onto a PDMS substrate, utilizing the platelike void under the membrane as a releaser. The ultrathin flexible Si film on PDMS shows optical transmittance of about 30-70% in visible and near-infrared light.

  16. Lithium Ion Mobility in Lithium Phosphidosilicates: Crystal Structure, (7) Li, (29) Si, and (31) P MAS NMR Spectroscopy, and Impedance Spectroscopy of Li8 SiP4 and Li2 SiP2.

    PubMed

    Toffoletti, Lorenzo; Kirchhain, Holger; Landesfeind, Johannes; Klein, Wilhelm; van Wüllen, Leo; Gasteiger, Hubert A; Fässler, Thomas F

    2016-12-05

    The need to improve electrodes and Li-ion conducting materials for rechargeable all-solid-state batteries has drawn enhanced attention to the investigation of lithium-rich compounds. The study of the ternary system Li-Si-P revealed a series of new compounds, two of which, Li8 SiP4 and Li2 SiP2 , are presented. Both phases represent members of a new family of Li ion conductors that display Li ion conductivity in the range from 1.15(7)×10(-6) Scm(-1) at 0 °C to 1.2(2)×10(-4) Scm(-1) at 75 °C (Li8 SiP4 ) and from 6.1(7)×10(-8) Scm(-1) at 0 °C to 6(1)×10(-6) Scm(-1) at 75 °C (Li2 SiP2 ), as determined by impedance measurements. Temperature-dependent solid-state (7) Li NMR spectroscopy revealed low activation energies of about 36 kJ mol(-1) for Li8 SiP4 and about 47 kJ mol(-1) for Li2 SiP2 . Both compounds were structurally characterized by X-ray diffraction analysis (single crystal and powder methods) and by (7) Li, (29) Si, and (31) P MAS NMR spectroscopy. Both phases consist of tetrahedral SiP4 anions and Li counterions. Li8 SiP4 contains isolated SiP4 units surrounded by Li atoms, while Li2 SiP2 comprises a three-dimensional network based on corner-sharing SiP4 tetrahedra, with the Li ions located in cavities and channels.

  17. Solution based synthesis of simple fcc Si nano-crystals under ambient conditions.

    PubMed

    Balcı, Mustafa H; Sæterli, Ragnhild; Maria, Jerome; Lindgren, Mikael; Holmestad, Randi; Grande, Tor; Einarsrud, Mari-Ann

    2013-02-28

    We demonstrate for the first time that simple face-centered cubic (fcc) silicon nano-crystals can be produced by a solution based bottom-up synthesis route under ambient conditions. Simple fcc Si nano-crystals (2-7 nm) were prepared at room temperature by using sodium cyclopentadienide as a reducing agent for silicon tetrachloride. Photoluminescence emission at 550 nm was observed for the fcc silicon nano-crystals upon excitation at 340 nm, indicating that fcc Si nano-crystals were exhibiting direct bandgap like semiconductor properties with very fast radiative recombination rates. The new synthesis route makes possible the production and study of simple fcc polymorphs of Si nano-crystals with an easy alteration of surface termination groups.

  18. Crystal structure of Si-doped HfO2

    NASA Astrophysics Data System (ADS)

    Zhao, Lili; Nelson, Matthew; Aldridge, Henry; Iamsasri, Thanakorn; Fancher, Chris M.; Forrester, Jennifer S.; Nishida, Toshikazu; Moghaddam, Saeed; Jones, Jacob L.

    2014-01-01

    Si-doped HfO2 was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO2 was determined as less than 9 at. %. A second phase was identified as Cristobalite (SiO2) rather than HfSiO4, the latter of which would be expected from existing SiO2-HfO2 phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO2 shows that c/b increases, while β decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

  19. Characterization of Surface Features in Detached Grown GeSi Crystals

    NASA Technical Reports Server (NTRS)

    Cobb, S. D.; Volz, M. P.; Schweizer, M.; Kaiser, N.; Carpenter, P. K.; Szofran, F. R.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The growth of detached crystals by the Bridgman technique, in which the growing crystal is not in contact with the crucible wall, has been observed both on earth and in microgravity conditions. At present, the mechanisms contributing to the detachment are not completely understood and until recently detachment has not been reproducibly obtained. It is commonly understood that the main factors that promote the occurrence of detached growth include: high contact angle between the melt and the crucible material, high growth angle, and a pressure difference between the annular gap around the solid below the melt and the volume above the melt along the meniscus. These parameters were varied in Bridgman growth experiments to determine the conditions required to achieve detached growth terrestrially in Ge and GeSi alloys. These experiments are in preparation for experiments on the International Space Station (ISS). The detailed objectives of the flight experiments and a description of the growth methods employed are the subject of another presentation at this Conference. Detached crystals were achieved repeatedly in pyrolytic boron nitride ampoules when a pressure difference was employed. All crystals, except for those grown in fused silica ampoules, were easily removed from their containers, however, this fact alone is not sufficient to infer detached growth. Detachment was verified by comparing profilometer measurements of the radius of the samples with observations of the sample surfaces using optical and electron microscopy. The surfaces of the attached areas of the crystals had the same shape and surface texture as the interior crucible wall. Regions of detached growth contained many unique features and crystal facets could usually be observed. Several of these surface features have been correlated with mechanisms of detachment or free-surface growth and others to processing events or conditions.

  20. Structural properties of a-Si films and their effect on aluminum induced crystallization

    SciTech Connect

    Tankut, Aydin; Ozkol, Engin; Karaman, Mehmet; Turan, Rasit; Canli, Sedat

    2015-10-15

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

  1. Advanced chemical model for analysis of Cz and DS Si-crystal growth

    NASA Astrophysics Data System (ADS)

    Vorob'ev, A. N.; Sid'ko, A. P.; Kalaev, V. V.

    2014-01-01

    In growing bulk crystals from the melt, impurities contained in silicon feedstock, generated due to the melt-to-crucible contact and transported by the gas flow from graphite elements strongly affect the efficiency of mono and multicrystalline silicon solar cells. The present paper is aimed at developing an advanced coupled chemical model accounting for such phenomena as oxygen and nitrogen solution at crucible wall, oxygen and carbon transport through the melt free surface, formation of Si3N4-, Si2N2O- and SiC-particles in the melt, mass transport of SiO-, CO- and Si-species in argon carrier gas and, finally, formation of parasitic deposits on the furnace units. The model is verified by simulation of DS and Cz Si-crystal growth. It is shown that the computational results agree well with available experimental data, and the model can be used for optimization of Cz and DS processes.

  2. Dynamic holographic interferometry by photorefractive crystals for quantitative deformation measurements.

    PubMed

    Pouet, B; Krishnaswamy, S

    1996-02-10

    A holographic interferometer that uses two-wave mixing in a photorefractive (Bi12SiO20) crystal under an applied ac field is described. The interferometer uses a repetitive sequence of separate record and readout times to obtain quasi real-time holographic interferograms of vibrating objects. It is shown that a good signal-to-noise ratio of the interferometer is obtained by turning off the object illumination and the applied ac field during readout of the hologram. The good signal-to-noise ratio of the resulting holographic interferograms enables phase measurement, which allows for quantitative deformation analysis.

  3. Measurement of single crystal surface parameters

    NASA Technical Reports Server (NTRS)

    Swanson, L. W.; Bell, A. E.; Strayer, R. W.

    1972-01-01

    The sticking coefficient and thermal desorption spectra of Cs from the (110) plane of W was investigated. A sticking coefficient of unity for the monolayer region was measured for T 250 K. Several distinct binding states were observed in the thermal desorption spectrum. Work function and electron reflection measurements were made on the (110) and (100) crystal faces of Mo. Both LEED and Auger were used to determine the orientation and cleanliness of the crystal surfaces. The work function values obtained for the (110) and (100) planes of Mo were 4.92 and 4.18 eV respectively.

  4. Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

    SciTech Connect

    Pavlyk, B. V.; Lys, R. M. Didyk, R. I.; Shykorjak, J. A.

    2015-05-15

    Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.

  5. Single Crystal Epitaxy and Characterization of Beta-SiC.

    DTIC Science & Technology

    1982-07-01

    Bessman and Spear (11) have pro- duced a new version of the program ( SOLGASMIX - PV ) which incorporates the ideal gas law. This last version is now capable...equilibrium compositions of the Si-C-H system by the aforementioned SOLGASMIX - PV program. The results of these calculations will be presented in the...using ’ SOLGASMIX - PV " computer program. 3. Direct CVD growth of O-SiC film on Si was difficult and non- reproducible. However, the growth of an

  6. Crystal structures and magnetic properties of CeAu 4Si 2 and CeAu 2Si 2

    NASA Astrophysics Data System (ADS)

    Sefat, Athena S.; Palasyuk, Andriy M.; Bud'ko, Sergey L.; Corbett, John D.; Canfield, Paul C.

    2008-02-01

    Single crystals of CeAu 4Si 2 and CeAu 2Si 2 have been grown out of ternary fluxes rich in Au, and the former, also by sintering the stoichiometric composition at 750 °C. The single-crystal X-ray refinement result for CeAu 4Si 2 is orthorhombic, Cmmm (No. 65, Z=2), different from a tetragonal result found from an X-ray powder diffraction refinement [H. Nakashima, et al., J. Alloys Compds. 424 (2006) 7]. For CeAu 2Si 2, this is the first report of the stoichiometric crystalline phase, in the known tetragonal I4/ mmm structure. The anisotropic field- and temperature-dependent magnetizations, as well as specific heat and resistivity data are compared. Although both compounds have related structural packing, they present unique magnetic features. CeAu 2Si 2 is a typical antiferromagnet with TN=8.8(1) K and CeAu 4Si 2 features a ferromagnetic component below Tc=3.3(1) K. Both phases have effective moments close in value to that of free Ce 3+.

  7. Crystal structures and magnetic properties of CsAu4Si2 and CeAu2Si2

    SciTech Connect

    Sefat, A.; Palasyuk, A.; Bud'ko, S.; Corbett, J.; Canfield, P.

    2007-12-03

    Single crystals of CeAu{sub 4}Si{sub 2} and CeAu{sub 2}Si{sub 2} have been grown out of ternary fluxes rich in Au, and the former, also by sintering the stoichiometric composition at 750 C. The single-crystal X-ray refinement result for CeAu{sub 4}Si{sub 2} is orthorhombic, Cmmm (No. 65, Z=2), different from a tetragonal result found from an X-ray powder diffraction refinement [H. Nakashima, et al., J. Alloys Compds. 424 (2006) 7]. For CeAu{sub 2}Si{sub 2}, this is the first report of the stoichiometric crystalline phase, in the known tetragonal I4/mmm structure. The anisotropic field- and temperature-dependent magnetizations, as well as specific heat and resistivity data are compared. Although both compounds have related structural packing, they present unique magnetic features. CeAu{sub 2}Si{sub 2} is a typical antiferromagnet with T{sub N} = 8.8(1) K and CeAu{sub 4}Si{sub 2} features a ferromagnetic component below T{sub c}=3.3(1) K. Both phases have effective moments close in value to that of free Ce{sup 3+}.

  8. Si-O Bonded Interactions in Silicate Crystals and Molecules:  A Comparison

    SciTech Connect

    Gibbs, G. V.; Jayatilaka, D.; Spackman, M. A.; Cox, D. F.; Rosso, K. M.

    2006-11-01

    Bond critical point, local kinetic energy density, G(rc), and local potential energy density, V(rc), properties of the electron density distributions, ρ(r), calculated for silicates such as quartz and gas-phase molecules such as disiloxane are similar, indicating that the forces that govern the Si-O bonded interactions in silica are short-ranged and molecular-like. Using the G(rc)/ρ(rc) ratio as a measure of bond character, the ratio increases as the Si-O bond length, the local electronic energy density, H(rc) = G(rc) + V(rc), and the coordination number of the Si atom decrease and as the accumulation of the electron density at the bond critical point, ρ(rc), and the Laplacian, ∇2ρ(rc), increase. The G(rc)/ρ(rc) and H(rc)/ρ(rc) ratios categorize the bonded interaction as observed for other second row atom M-O bonds into discrete categories with the covalent character of each of the M-O bonds increasing with the H(rc)/ρ(rc) ratio. The character of the bond is examined in terms of the large net atomic charges conferred on the Si atoms comprising disiloxane, stishovite, quartz, and forsterite and the domains of localized electron density along the Si-O bond vectors and on the reflex side of the Si-O-Si angle together with the close similarity of the Si-O bonded interactions observed for a variety of hydroxyacid silicate molecules and a large number of silicate crystals. Finally, the bond critical point and local energy density properties of the electron density distribution indicate that the bond is an intermediate interaction between Al-O and P-O bonded interactions rather than being a closed-shell or a shared interaction.

  9. Crystal growth of Dirac semimetal ZrSiS with high magnetoresistance and mobility

    PubMed Central

    Sankar, Raman; Peramaiyan, G.; Muthuselvam, I. Panneer; Butler, Christopher J.; Dimitri, Klauss; Neupane, Madhab; Rao, G. Narsinga; Lin, M.-T.; Chou, F. C.

    2017-01-01

    High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (RH), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ(100) and Iǁ(110) were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (RH) showed hole-dominated carriers with a high mobility of 3.05 × 104 cm2 V−1 s−1 at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS). PMID:28098209

  10. Crystal growth of Dirac semimetal ZrSiS with high magnetoresistance and mobility.

    PubMed

    Sankar, Raman; Peramaiyan, G; Muthuselvam, I Panneer; Butler, Christopher J; Dimitri, Klauss; Neupane, Madhab; Rao, G Narsinga; Lin, M-T; Chou, F C

    2017-01-18

    High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (RH), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ(100) and Iǁ(110) were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (RH) showed hole-dominated carriers with a high mobility of 3.05 × 10(4) cm(2) V(-1) s(-1) at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS).

  11. Hopping conductivity in Mn-doped β-FeSi2 single crystals

    NASA Astrophysics Data System (ADS)

    Arushanov, E.; Lisunov, K. G.; Vinzelberg, H.; Behr, G.; Schumann, J.; Schmidt, O. G.

    2008-09-01

    The article gives a report on resistivity measurements on Mn-doped p-type FeSi2 single crystals and analyzes the data within the framework of different hopping conductivity models. Both the Mott [N. Mott and E. A. Davies, Electron Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979)] and the Shklovskii-Efros [B. I. Shklovskii and A. L. Efros, Electronic Properties o0066 Doped Semiconductors (Springer, Berlin, 1984)] regimes of the variable-range hopping (VRH) conductivity are observed. It is shown that the temperature dependence of the resistivity of Mn-doped β-FeSi2 crystals, which follows a VRH conduction mechanism, can be expressed by a scaling expression of the form ln(ρ /ρ0)=Af(T /Tx). The characteristic and transition temperatures, as well as the complete set of parameters describing the properties of the localized holes (the localization radius, the dielectric permittivity, the width of the Coulomb gap Δ, and the values of the density of states at the Fermi level) are determined. The data above indicate existence of a rigid gap δ in the spectrum of the DOS in addition to Δ and point out to the polaronic nature of the charge carriers in the investigated compound.

  12. Crystal growth of Dirac semimetal ZrSiS with high magnetoresistance and mobility

    NASA Astrophysics Data System (ADS)

    Sankar, Raman; Peramaiyan, G.; Muthuselvam, I. Panneer; Butler, Christopher J.; Dimitri, Klauss; Neupane, Madhab; Rao, G. Narsinga; Lin, M.-T.; Chou, F. C.

    2017-01-01

    High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (RH), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ(100) and Iǁ(110) were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (RH) showed hole-dominated carriers with a high mobility of 3.05 × 104 cm2 V‑1 s‑1 at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS).

  13. The mechanical properties of single crystal {alpha}-Si{sub 3}N{sub 4}

    SciTech Connect

    Reimanis, I.E.; Suematsu, H.; Petrovic, J.J.; Mitchell, T.E.

    1993-11-01

    The ambient and high temperature mechanical properties of single crystal {alpha}{minus}Si{sub 3}N{sub 4} synthesized by chemical vapor deposition are reported. Crack patterns in the as-grown crystals and around Vicker`s indentations reveal that significant residual stresses develop during growth. Indentation studies indicate that the cleavage is essentially isotropic in {alpha}{minus}Si{sub 3}N{sub 4} at 25 C as well as at 1400 C. Transmission electron microscopy on crystals deformed at high temperatures, confirmed previous observation that high-temperature slip occurs primarily on (1011)[1120] system.

  14. THz conductivity measurement of MnSi

    NASA Astrophysics Data System (ADS)

    Mohtashemi, Laleh; Farahani, Amir; Karhu, Eric; Monchesky, Theodore L.; Dodge, J. Steven

    2012-10-01

    We present measurements of the low-frequency optical conductivity of a thin film of MnSi, using time-domain terahertz spectroscopy. At low temperatures and low frequencies, we extract the DC resistivity, scattering life time and plasma frequency from a Drude fit. We obtain a value of φp˜1.0 eV, which can be used to estimate the renormalization coefficient through comparison with band theory. At higher temperatures, a deviation from Drude behavior is observed, suggesting a loss of quasi-particle coherence. In the region of low temperatures and high frequencies, we see evidence for a crossover to the anomalous power law dependence observed by Mena et al.footnotetextF.P. Mena et al. Phys. Rev. B. 67, 241101(R) (2003). As the temperature increases, the anomalous frequency dependence becomes more pronounced, and the plasma frequency inferred from a Drude fit increases dramatically. Above T 50 K, σ2(φ) develops a negative slope that is inconsistent with both a Drude model and the anomalous power law observed earlier, indicating a sharp pseudogap in the conductivity spectrum.

  15. Improved efficiency of ultra-thin µc-Si solar cells with photonic-crystal structures.

    PubMed

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Umeda, Takami; Kawamoto, Yosuke; Noda, Susumu

    2015-09-21

    We investigate the improvement of the conversion efficiency of ultra-thin (~500nm-thick) microcrystalline silicon (μc-Si) solar cells incorporating photonic-crystal structures, where light absorption is strongly enhanced by the multiple resonant modes in the photonic crystal. We focus on the quality of the intrinsic μc-Si layer deposited on the substrate, which is structured to form a photonic crystal at its upper surface with a period of several hundred nanometers. We first study the crystalline quality from the viewpoint of the crystalline fraction and show that the efficiency can be improved when the deposition conditions for the μc-Si layer are tuned to give an almost constant crystalline fraction of ~50% across the entire film. We then study the influence of the photonic-crystal structure on the crystalline quality. From transmission-electron microscope images, we show that the collision of μc-Si grains growing at different angles occurs when a photonic-crystal structure with an angular surface is used; this can be suppressed by introducing a rounded surface structure. As a result, we demonstrate an efficiency of 8.7% in a ~500-nm thick, homo-junction μc-Si solar cell, which has only ~1/4 the thickness of typical μc-Si solar cells. We also discuss the possibility of further improving the efficiency by performing calculations that focus on the absorption characteristics of the fabricated cell structure.

  16. Floating zone crystal growth of selected R2PdSi3 ternary silicides

    SciTech Connect

    Xu, Yiku; Frontzek, Matthias D; Mazilu, Irina; Loeser, W; Behr, G; Buechner, Bernd; Liu, L

    2011-01-01

    Substitution of various rare earths R within the class of R2PdSi3 single crystals with hexagonal AlB2-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds with R = Tb, Tm, Pr, and Gd. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, except of Tb2PdSi3, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. Thin precipitates of RSi secondary phases were detected in the crystal matrix. Their phase fraction can be diminished by growth from Pd-rich melt compositions and annealing treatments. The compounds exhibit antiferromagnetic order below the N el temperatures TN: 23.6 K (Tb2PdSi3), 1.8 K (Tm2PdSi3), 2.17 K (Pr2PdSi3) and 22 K (Gd2PdSi3) with different grades of magnetic anisotropy.

  17. Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals

    SciTech Connect

    Zhang, Y.; Zhang, L.; Chen, H.; Choi, G.; Raghothamachar, B.; Dudley, M.; Edgar, J.H.; Grasza, K.; Tymicki, E.; Su, D.; Zhu, Y.

    2010-06-01

    A model is presented for the nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC boules. Inhomogeneous densities of screw dislocations lead to uneven growth rates, resulting in complex step overgrowth processes which can partially suppress the Burgers vector of a 15R 1c screw dislocation through the creation of Frank faults and Frank partial dislocations. Combined with stacking shifts induced by the passage of basal plane partial dislocations, it is shown that the partial Burgers vector suppression can leave behind a residual 6H 1c dislocation, which then acts as a nucleus for reproduction of 6H-SiC structure in the 15R-SiC crystal.

  18. Crystal structure of the ternary silicide Gd2Re3Si5.

    PubMed

    Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

    2014-12-01

    A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta-silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo-octa-hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti-prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re-Re distance of 2.78163 (5) Å and isolated squares with an Re-Re distance of 2.9683 (6) Å.

  19. Prismatic Slip in PVT-Grown 4H-SiC Crystals

    NASA Astrophysics Data System (ADS)

    Guo, Jianqiu; Yang, Yu; Raghothamachar, Balaji; Kim, Jungyu; Dudley, Michael; Chung, Gilyong; Sanchez, Edward; Quast, Jeffrey; Manning, Ian

    2017-04-01

    Basal plane slip is the most frequently observed deformation mechanism in 4H-type silicon carbon (4H-SiC) single crystals grown by the physical vapor transport (PVT) method. However, it was recently reported that dislocations in such crystals can also glide in prismatic slip systems. In this study, we observed nonuniform distributions of three sets of prismatic dislocations in a commercial 4H-SiC substrate wafer. The nonuniformity is a result of the distribution of resolved shear stress on each prismatic slip system caused by radial thermal gradients in the growing crystal boule. A radial thermal model has been developed to estimate the thermal stress across the entire area of the crystal boule during PVT growth. The model results show excellent agreement with the observations, confirming that radial thermal gradients play a key role in activating prismatic slip in 4H-SiC during bulk growth.

  20. Prismatic Slip in PVT-Grown 4H-SiC Crystals

    NASA Astrophysics Data System (ADS)

    Guo, Jianqiu; Yang, Yu; Raghothamachar, Balaji; Kim, Jungyu; Dudley, Michael; Chung, Gilyong; Sanchez, Edward; Quast, Jeffrey; Manning, Ian

    2016-11-01

    Basal plane slip is the most frequently observed deformation mechanism in 4H-type silicon carbon (4H-SiC) single crystals grown by the physical vapor transport (PVT) method. However, it was recently reported that dislocations in such crystals can also glide in prismatic slip systems. In this study, we observed nonuniform distributions of three sets of prismatic dislocations in a commercial 4H-SiC substrate wafer. The nonuniformity is a result of the distribution of resolved shear stress on each prismatic slip system caused by radial thermal gradients in the growing crystal boule. A radial thermal model has been developed to estimate the thermal stress across the entire area of the crystal boule during PVT growth. The model results show excellent agreement with the observations, confirming that radial thermal gradients play a key role in activating prismatic slip in 4H-SiC during bulk growth.

  1. Mechanism of photoluminescence investigation of Si nano-crystals embedded in SiOx

    NASA Astrophysics Data System (ADS)

    Vivas Hernández, A.; Torchynska, T. V.; Guerrero Moreno, I.

    2010-05-01

    Nanoscaled Si (Ge) systems continue to be of interest for their potential application as Si (Ge) based light emiting materials and photonic structures. Optical properties of such systems are sensitive to nanocrystallite (NC) size fluctuations as well as to defects effects due to large surface to volume ratio in small NCs. Intensive research of Si (Ge) NCs is focused on the elucidation of the mechanism of radiative recombination with the aim to provide high efficient emission at room temperature in different spectral range. The bright visible photoluminescence (PL) of the Si (Ge)-SiOX system was investigated during last 15 years and several models were proposed. It was shown that blue (~2.64 eV) and green (~2.25 eV) PL are caused by various emitting centers in silicon oxide [1], while the nature of the more intensive red (1.70-2.00 eV) and infrared (0.80-1.60 eV) PL bands steel is no clear. These include PL model connected whit quantum confinement effects in Si (Ge) nanocrystallites [2-4], surface states on Si (Ge) nanocrystallites, as well as defects at the Si/SiOX (Ge/SiOX) interface and in the SiO2 layer [5-11]. It should be noted, that even investigation of PL on single Si quantum dots [12] cannot undoubtedly confirm the quantum confinement nature of red emission.

  2. Solid-phase crystallization of Si1- x - y Sn x C y ternary alloy layers and characterization of their crystalline and optical properties

    NASA Astrophysics Data System (ADS)

    Yano, Shota; Yamaha, Takashi; Shimura, Yosuke; Takeuchi, Wakana; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

    2017-01-01

    The solid phase crystallization of Si1- x - y Sn x C y ternary alloy layers on an insulator has been examined. Amorphous Si1- x - y Sn x C y layers with a Sn content of 0-20% and a C content of 0-10% were deposited on quartz substrates using a radio-frequency magnetron sputtering method and annealed at temperatures from 400 to 800 °C to induce the solid-phase crystallization. The crystalline properties of the Si1- x - y Sn x C y layers and the influences of Sn and C introduction on their crystalline structures were investigated. It was found that Sn introduction effectively reduces the crystallization temperature of a Si1- x - y Sn x C y layer to 400 °C, while a Si1- y C y binary alloy layer is hardly crystallized even at 800 °C. In addition, X-ray photoelectron spectroscopy measurement revealed that the Sn introduction effectively enhances the introduction of C atoms into substitutional sites in the ternary alloys. The substitutional C content in a polycrystalline Si1- x - y Sn x C y layer was estimated to be as high as 7.2%, which exceeds the thermal equilibrium solid solubility of C in a Si matrix. The absorption spectra of Si1- x - y Sn x C y ternary alloys were also investigated.

  3. Fabrication and measurement of devices in Si/SiGe nanomembranes

    NASA Astrophysics Data System (ADS)

    Mohr, Robert

    Silicon/silicon-germanium (Si/SiGe) heterostructures are useful as hosts for gated quantum dots. The quality of the as-grown Si/SiGe heterostructure has a large impact on the final quality of the quantum dot as a qubit host. For many years, quantum dots have been fab- ricated on strain-graded heterostructures. Commonly used strain-graded heterostructures inevitably develop plastic defects that lead to interface roughness, crosshatch, and mosaic tilt. All of these factors are sources of disorder in Si/SiGe quantum electronics. In this dissertation, I report the fabrication of Hall bars and gated quantum dots on heterostructures grown on fully elastically relaxed SiGe nanomembranes, rather than strain-graded heterostructures. I report measurements of Hall bars demonstrating the creation of two-dimensional electron gases in these structures. I report the fabrication procedures used to create pairs of Hall bars and quantum dots on individual membranes. In addition, I explain a general process flow for the creation of Si/SiGe quantum devices. I focus especially on an ion-implantation technique I implemented for the fabrication of Hall bars and quantum dots in Si/SiGe heterostructures without modulation doping layers.

  4. Crystallization from high temperature solutions of Si in copper

    DOEpatents

    Ciszek, Theodore F.

    1994-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  5. Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements

    NASA Astrophysics Data System (ADS)

    Privitera, Stefania M. S.; Litrico, Grazia; Camarda, Massimo; Piluso, Nicolò; La Via, Francesco

    2017-03-01

    We study the correlation between crystal quality and electrical transport in 4H-SiC by micro-photoluminescence and laser-beam-induced photocurrent measurements. A focused HeCd laser at 325 nm has been employed to simultaneously measure, with a spatial resolution of a few microns, both the photoluminescence and current–voltage characteristics of 4H-SiC Schottky diodes. We found that the laser-induced photocurrent acquired along a defect can give information on its spatial distribution in depth and that the local minority carrier lifetime and generation depend on the type of stacking fault, both decreasing for defects with deeper intragap levels.

  6. Synthesis, crystal structure, and magnetic properties of novel intermetallic compounds R2Co2SiC (R = Pr, Nd).

    PubMed

    Zhou, Sixuan; Mishra, Trinath; Wang, Man; Shatruk, Michael; Cao, Huibo; Latturner, Susan E

    2014-06-16

    The intermetallic compounds R2Co2SiC (R = Pr, Nd) were prepared from the reaction of silicon and carbon in either Pr/Co or Nd/Co eutectic flux. These phases crystallize with a new stuffed variant of the W2CoB2 structure type in orthorhombic space group Immm with unit cell parameters a = 3.978(4) Å, b = 6.094(5) Å, c = 8.903(8) Å (Z = 2; R1 = 0.0302) for Nd2Co2SiC. Silicon, cobalt, and carbon atoms form two-dimensional flat sheets, which are separated by puckered layers of rare-earth cations. Magnetic susceptibility measurements indicate that the rare earth cations in both analogues order ferromagnetically at low temperature (TC ≈ 12 K for Nd2Co2SiC and TC ≈ 20 K for Pr2Co2SiC). Single-crystal neutron diffraction data for Nd2Co2SiC indicate that Nd moments initially align ferromagnetically along the c axis around ∼12 K, but below 11 K, they tilt slightly away from the c axis, in the ac plane. Electronic structure calculations confirm the lack of spin polarization for Co 3d moments.

  7. The kinetics of Al-Si spinel phase crystallization from calcined kaolin

    SciTech Connect

    Ptacek, Petr

    2010-11-15

    The crystallization of Al-Si spinel from medium ordered kaolin with high content of kaolinite was investigated using the differential thermal analysis (DTA). The apparent activation energy of the process was evaluated from the dependence of exothermic peak of crystallization on heating rate. Within the applied interval of heating rate (1-40 K min{sup -1}) the temperature of peak maximum increases from initial value of 1220.5 K in about 54.2 K. The apparent activation energy of the process 856{+-}2 kJ mol{sup -1}was calculated using the Kissinger equation. The growth morphology of Al-Si spinel crystal was evaluated from the Avrami parameter. The average value of morphology parameter determined within the observed interval of heating rate is 3.08{+-}0.03. This value indicates that crystallization mechanism of Al-Si spinel phase proceeds by bulk nucleation of the new phase with constant number of nuclei and that the three-dimensional growth of crystals is controlled by the reaction rate on the phases interface. - Graphical abstract: Kinetics of crystallization of Al-Si spinel from calcined kaolin was investigated by the DTA using the Kissinger kinetic approach. The apparent activation energy and morphology parameter of the process is 856{+-}2 kJ mol{sup -1} and 3.08{+-}0.03, respectively.

  8. Magnetocaloric effect in a dual-phase coupled LaFe11Si2 crystal prepared by a modified high-pressure zone-melting technique

    NASA Astrophysics Data System (ADS)

    Feng, Shutong; Fang, Yue; Zhai, Qijie; Luo, Zhiping; Zheng, Hongxing

    2016-10-01

    A modified high-pressure optical zone-melting technique was adopted to grow a rare-earth-based LaFe11Si2 crystal in the present work. Dual-phase coupled microstructure was obtained where aligned α(Fe) phase distributed in the La(Fe,Si)13 matrix. Magnetic measurements showed that the produced crystal underwent a second-order magnetic transition in the vicinity of 250 K. Under a magnetic field change of 30 kOe, the refrigeration capacity (RC) of the produced crystal reached up to 162 J/kg. It was confirmed that zone-melting crystal growth technique is an effective approach to strikingly enhance the magnetocaloric effect of La-Fe-Si refrigeration materials.

  9. Optical filters using Cantor quasi-periodic one dimensional photonic crystal based on Si/SiO2

    NASA Astrophysics Data System (ADS)

    Sahel, S.; Amri, R.; Bouaziz, L.; Gamra, D.; Lejeune, M.; Benlahsen, M.; Zellama, K.; Bouchriha, H.

    2016-09-01

    Quasi-periodic one-dimensional Cantor photonic crystals are elaborated by depositing alternating silicon and silica Si/SiO2 layers by radiofrequency magnetron sputtering technique with cold plasma. Transmittance and reflectance spectra of these quasi crystals exhibit a large photonic band gap in the infrared range at normal incidence which is well reproduced by a theoretical model based on the transfer matrix method. The obtained wide photonic band gap reveals the existence of permitted modes depending on the nature and characteristics of the built in system which can constitute optical windows. This effect can be a good alternative for the design of flexible filters used in many areas of applications such as telecommunication and optoelectronic devices.

  10. Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

    NASA Astrophysics Data System (ADS)

    Kriso, C.; Triozon, F.; Delerue, C.; Schneider, L.; Abbate, F.; Nolot, E.; Rideau, D.; Niquet, Y.-M.; Mugny, G.; Tavernier, C.

    2017-03-01

    The optical response of strained SiGe alloys, as well as thin Si layers, is analyzed using a sp3d5s∗ tight-binding model within the independent particle approximation. The theoretical results are compared to measurements obtained on samples with various Ge content and layer thicknesses. The dielectric function is extracted from spectroscopic ellipsometry allowing a separation of its real and imaginary parts. Theory and simulation show similar trends for the variation of the dielectric function of SiGe with varying Ge content. Variations are also well reproduced for thin Si layers with varying thickness and are attributed to quantum confinement.

  11. Infrared study of α–SiO{sub 2} single crystal under high pressure

    SciTech Connect

    Pellicer-Porres, J. Segura, A.; Santamaría-Pérez, D.

    2016-02-07

    We have measured high pressure α-quartz reflectance spectra in the mid infrared. We used single crystals, taking full profit of polarization. The quality of the spectra allows fitting the reflectance spectra. We have characterized the pressure evolution of E and A{sub 2} modes with increased precision, even in the spectral regions where they overlap. In addition, we have determined the TO-LO splitting of each mode. Some of the A{sub 2} modes show dramatic pressure variations of the LO-TO splitting, which cannot be explained only by changes in length and ionicity of individual bonds, requiring a new mechanism. We suggest that rotation of the SiO{sub 4} tetrahedra plays a fundamental role. We have also determined the evolution of the electronic dielectric constant under high pressure. We find that its pressure increment is mainly a volume effect, although the small increase in birefringence points to secondary changes associated to the electronic resonances.

  12. Universal conductance fluctuations in three dimensional metallic single crystals of Si

    PubMed

    Ghosh; Raychaudhuri

    2000-05-15

    In this paper we report the measurement of conductance fluctuations in 3D crystals of Si made metallic by heavy doping. ( L/L(straight phi) approximately 10(3), where L(straight phi) is the phase coherence length.) Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations as a predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of L(3)(straight phi) were found to be saturated at <(deltaG(straight phi))(2)> approximately (e(2)/h)(2). An accurate knowledge of the level of disorder enables us to calculate the change in conductance deltaG1 due to movement of a single scatterer as <(deltaG1)(2)> approximately (e(2)/h)(2), which is approximately 2 orders of magnitude higher than its theoretically expected value in 3D systems.

  13. Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide

    SciTech Connect

    Lo Savio, R.; Galli, M.; Liscidini, M.; Andreani, L. C.; Franzò, G.; Iacona, F.; Miritello, M.; Irrera, A.; Sanfilippo, D.; Piana, A.; Priolo, F.

    2014-03-24

    We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54 μm, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission in a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.

  14. Mechanism of the Reduced Thermal Conductivity of Fishbone-Type Si Phononic Crystal Nanostructures

    NASA Astrophysics Data System (ADS)

    Nomura, M.; Maire, J.

    2014-09-01

    The mechanism of the reduced thermal conductivity of fishbone-type phononic crystal (PnC) nanostructures, in which ballistic phonon transport is dominant, was investigated with consideration of both the wave and particle nature of phonons. Phononic band diagrams were calculated for an Si nanowire and a fishbone-type PnC structure with a period of 100 nm, and a clear reduction of the group velocity of phonons, because of a zone-folding effect, was shown. Air-suspended Si nanowires and fishbone-type PnC structures were fabricated by electron beam (EB) lithography, and their thermal conductivities were measured by use of the originally developed micro time-domain thermoreflectance method. The PnC structure had a much lower thermal conductivity. We measured the thermal conductivity of a variety of PnC structures with different fin widths to investigate the mechanism of the reduced thermal conductivity observed. The result indicates that the increase of the phonon traveling distance. as a result of the fins, also results in reduced thermal conductivity.

  15. Mechanism of the Reduced Thermal Conductivity of Fishbone-Type Si Phononic Crystal Nanostructures

    NASA Astrophysics Data System (ADS)

    Nomura, M.; Maire, J.

    2015-06-01

    The mechanism of the reduced thermal conductivity of fishbone-type phononic crystal (PnC) nanostructures, in which ballistic phonon transport is dominant, was investigated with consideration of both the wave and particle nature of phonons. Phononic band diagrams were calculated for an Si nanowire and a fishbone-type PnC structure with a period of 100 nm, and a clear reduction of the group velocity of phonons, because of a zone-folding effect, was shown. Air-suspended Si nanowires and fishbone-type PnC structures were fabricated by electron beam (EB) lithography, and their thermal conductivities were measured by use of the originally developed micro time-domain thermoreflectance method. The PnC structure had a much lower thermal conductivity. We measured the thermal conductivity of a variety of PnC structures with different fin widths to investigate the mechanism of the reduced thermal conductivity observed. The result indicates that the increase of the phonon traveling distance. as a result of the fins, also results in reduced thermal conductivity.

  16. The system Ta-V-Si: Crystal structure and phase equilibria

    SciTech Connect

    Khan, A.U.; Broz, P.; Bursik, J.; Grytsiv, A.; Chen, X.-Q.; Giester, G.; Rogl, P.

    2012-03-15

    Phase relations have been evaluated for the Ta-V-Si system at 1500 and 1200 Degree-Sign C. Three ternary phases were found: {tau}{sub 1}-(Ta,V){sub 5}Si{sub 3} (Mn{sub 5}Si{sub 3}-type), {tau}{sub 2}-Ta(Ta,V,Si){sub 2} (MgZn{sub 2}-type) and {tau}{sub 3}-Ta(Ta,V,Si){sub 2} (MgCu{sub 2}-type). The crystal structure of {tau}{sub 2}-Ta(Ta,V,Si){sub 2} was solved by X-ray single crystal diffraction (space group P6{sub 3}/mmc). Atom order in the crystal structures of {tau}{sub 1}-(Ta,V){sub 5}Si{sub 3} (Mn{sub 5}Si{sub 3} type) and {tau}{sub 3}-Ta(Ta,V,Si){sub 2} was derived from X-ray powder diffraction data. A large homogeneity range was found for {tau}{sub 1}-(Ta{sub x}V{sub 1-x}){sub 5}Si{sub 3} revealing random exchange of Ta and V at a constant Si content. At 1500 Degree-Sign C, the end points of the {tau}{sub 1}-phase solution (0.082{<=}x{<=}0.624) are in equilibrium with the solutions (Ta{sub 1-x}V{sub x}){sub 5}Si{sub 3} (Cr{sub 5}B{sub 3} type, 0{<=}x{<=}0.128) and (Ta{sub x}V{sub 1-x}){sub 5}Si{sub 3} (W{sub 5}Si{sub 3} type, 0{<=}x{<=}0.048). - Graphical abstract: Phase relations have been evaluated for the Ta-V-Si system at 1500 and 1200 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Phase relations have been evaluated for the Ta-V-Si system at 1500 and 1200 Degree-Sign C. Black-Right-Pointing-Pointer Three ternary phases were found at 1500 Degree-Sign C. Black-Right-Pointing-Pointer At 1500 Degree-Sign C, {tau}{sub 1}-phase has large homogeneity region (0.064{<=}x{<=}0.624).

  17. Crystallization Behavior of Amorphous Si3N4 and Particle Size Control of the Crystallized α-Si3N4.

    PubMed

    Chung, Yong-Kwon; Kim, Shin-A; Koo, Jae-Hong; Oh, Hyeon-Cheol; Chi, Eun-Ok; Hahn, Jee-Hyun; Park, Chan

    2016-05-01

    Amorphous silicon nitride powder prepared by low-temperature vapor-phase reaction was heat treated at various temperatures for different periods of time to examine the crystallization behavior. The effects of the heat-treatment temperature and duration on the degree of crystallization were investigated along with the effect of the heat-up rate on the particle size, and its distribution, of the crystallized α-phase silicon nitride powder. A phase transition from amorphous to α-phase occurred at a temperature above 1400 degrees C. The crystallization. process was completed after heat treatment at 1500 degrees C for 3 h or at 1550 degrees C for 1 h. The crystallization process starts at the surface of the amorphous particle: while the outer regions of the particle become crystalline, the inner part remains amorphous. The re-arrangement of the Si and N atoms on the surface of the amorphous particle leads to the formation of hexagonal crystals that are separated from the host amorphous particle. The particle size and size distribution can be controlled by varying the heat-treatment profile (namely, the heat-treatment temperature, heating rate, and heating duration at the specified temperature), which can be used to control the relative extent of the nucleation and growth. The completion of most of the nucleation process by lowering the heat-up rate can be used to achieve a singlet particle size distribution. Bimodal particle size distribution can be achieved by fast heat-up during the crystallization process.

  18. Measurements of crystal growth kinetics at extreme deviations from equilibrium

    SciTech Connect

    Aziz, M.J.

    1992-07-14

    We have measured solute trapping of several solutes in Al and Ni during rapid solidification. We have also made preliminary measurements of solute trapping of As in Si, trapped 20 atomic percent As in Si, and made a preliminary measurement of the T{sub o} curve in Si-As. 5 figs.

  19. Studies of an array of PbF2 Cherenkov crystals with large-area SiPM readout

    SciTech Connect

    Fienberg, A. T.; Alonzi, L. P.; Anastasi, A.; Bjorkquist, R.; Cauz, D.; Fatemi, R.; Ferrari, C.; Fioretti, A.; Frankenthal, A.; Gabbanini, C.; Gibbons, L. K.; Giovanetti, K.; Goadhouse, S. D.; Gohn, W. P.; Gorringe, T. P.; Hertzog, D. W.; Iacovacci, M.; Kammel, P.; Kaspar, J.; Kiburg, B.; Li, L.; Mastroianni, S.; Pauletta, G.; Peterson, D. A.; Počanić, D.; Smith, M. W.; Sweigart, D. A.; Tishchenko, V.; Venanzoni, G.; Van Wechel, T. D.; Wall, K. B.; Winter, P.; Yai, K.

    2015-05-01

    The electromagnetic calorimeter for the new muon (g-2) experiment at Fermilab will consist of arrays of PbF2 Cherenkov crystals read out by large-area silicon photo-multiplier (SiPM) sensors. We report here on measurements and simulations using 2.0 -- 4.5 GeV electrons with a 28-element prototype array. All data were obtained using fast waveform digitizers to accurately capture signal pulse shapes versus energy, impact position, angle, and crystal wrapping. The SiPMs were gain matched using a laser-based calibration system, which also provided a stabilization procedure that allowed gain correction to a level of 1e-4 per hour. After accounting for longitudinal fluctuation losses, those crystals wrapped in a white, diffusive wrapping exhibited an energy resolution sigma/E of (3.4 +- 0.1) % per sqrt(E/GeV), while those wrapped in a black, absorptive wrapping had (4.6 +- 0.3) % per sqrt(E/GeV). The white-wrapped crystals---having nearly twice the total light collection---display a generally wider and impact-position-dependent pulse shape owing to the dynamics of the light propagation, in comparison to the black-wrapped crystals, which have a narrower pulse shape that is insensitive to impact position.

  20. Studies of an array of PbF2 Cherenkov crystals with large-area SiPM readout

    NASA Astrophysics Data System (ADS)

    Fienberg, A. T.; Alonzi, L. P.; Anastasi, A.; Bjorkquist, R.; Cauz, D.; Fatemi, R.; Ferrari, C.; Fioretti, A.; Frankenthal, A.; Gabbanini, C.; Gibbons, L. K.; Giovanetti, K.; Goadhouse, S. D.; Gohn, W. P.; Gorringe, T. P.; Hertzog, D. W.; Iacovacci, M.; Kammel, P.; Kaspar, J.; Kiburg, B.; Li, L.; Mastroianni, S.; Pauletta, G.; Peterson, D. A.; Počanić, D.; Smith, M. W.; Sweigart, D. A.; Tishchenko, V.; Venanzoni, G.; Van Wechel, T. D.; Wall, K. B.; Winter, P.; Yai, K.

    2015-05-01

    The electromagnetic calorimeter for the new muon (g - 2) experiment at Fermilab will consist of arrays of PbF2 Cherenkov crystals read out by large-area silicon photo-multiplier (SiPM) sensors. We report here on measurements and simulations using 2.0-4.5 GeV electrons with a 28-element prototype array. All data were obtained using fast waveform digitizers to accurately capture signal pulse shapes vs. energy, impact position, angle, and crystal wrapping. The SiPMs were gain matched using a laser-based calibration system, which also provided a stabilization procedure that allowed gain correction to a level of 10-4 per hour. After accounting for longitudinal fluctuation losses, those crystals wrapped in a white, diffusive wrapping exhibited an energy resolution σ/E of (3.4 ± 0.1) % /√{ E / GeV }, while those wrapped in a black, absorptive wrapping had (4.6 ± 0.3) % /√{ E / GeV }. The white-wrapped crystals-having nearly twice the total light collection-display a generally wider and impact-position-dependent pulse shape owing to the dynamics of the light propagation, in comparison to the black-wrapped crystals, which have a narrower pulse shape that is insensitive to impact position.

  1. Fresnoite Ba2TiSi2O8: A novel stimulated Raman scattering active crystal

    NASA Astrophysics Data System (ADS)

    Shen, Chuanying; Wang, Duanliang; Zhang, Huaijin; Wang, Jiyang; Boughton, Robert I.

    2016-12-01

    Large Ba2TiSi2O8 crystals were successfully grown by the Czochralski technique. The stimulated Raman scattering properties of the Ba2TiSi2O8 crystals were investigated for the first time, and the first (558 nm) and second (587 nm) Stokes lines were generated in an ultracavity single-pass configuration excited by 532 nm picosecond pulses. The output energy and conversion efficiency of the scattering process as functions of pump energy were studied, and the highest conversion efficiency was found to be 31.8%. The experiments indicate that Ba2TiSi2O8 is a novel active crystal suitable for solid-state Raman laser applications.

  2. Interface nature of oxidized single-crystal arrays of etched Si nanowires on (100)Si

    NASA Astrophysics Data System (ADS)

    Jivanescu, M.; Stesmans, A.; Kurstjens, R.; Dross, F.

    2012-02-01

    Low temperature electron spin resonance studies have been carried out on single crystalline arrays of sub-10 nm Si nanowires (NWs) manufactured on (100)Si by top down etching and oxidation thinning. This reveals the presence of a substantial inherent density of Pb0 (Si3 ≡ Si•) defects (traps) at the NW Si/SiO2 interfaces, due to particular faceting and enhanced interface strain, leaving NW interfaces of reduced electrical quality. Perusal of the specific properties of the occurring Pb-type defect system points to a nanopillar morphology compatible with NWs predominantly bordered by {110} facets, with cross sectional shape of <100> truncated {110} squares. The inherent interface quality appears limited by the wire-narrowing thermal oxidation procedure.

  3. Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.; Manion, S. J.; Milliken, S. J.; Pike, W. T.; Fathauer, R. W.

    1995-01-01

    The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

  4. Ferromagnetism in proton irradiated 4H-SiC single crystal

    SciTech Connect

    Zhou, Ren-Wei; Wang, Hua-Jie; Chen, Wei-Bin; Li, Fei; Liu, Xue-Chao Zhuo, Shi-Yi; Shi, Er-Wei

    2015-04-15

    Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

  5. Differential cross sections measurement of 28Si(p,p/γ)28Si and 29Si(p,p/γ)29Si reactions for PIGE applications

    NASA Astrophysics Data System (ADS)

    Jokar, A.; Kakuee, O.; Lamehi-Rachti, M.

    2016-03-01

    Differential cross sections for gamma-ray emission from the 28Si(p,p/γ)28Si (Eγ = 1779 keV) and the 29Si(p,p/γ)29Si (Eγ = 1273 keV) nuclear reactions were measured in the energy range of 2.0-3.2 MeV and 2.0-3.0 MeV, respectively. The thin Si targets were prepared by evaporating natural SiO onto self-supporting Ag films. The gamma-rays and backscattered protons were detected simultaneously. An HPGe detector placed at an angle of 90° with respect to beam direction was employed to collect gamma-rays while an ion implanted Si detector placed at a scattering angle of 165° was used to detect backscattered protons. The great advantage of this work is that differential cross sections were obtained with a procedure irrespective of absolute value of the collected beam charge.

  6. The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

    NASA Astrophysics Data System (ADS)

    Huang, Yi; Bos, Philip J.; Bhowmik, Achintya

    2010-09-01

    We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.

  7. SERS active Ag encapsulated Fe@SiO2 nanorods in electromagnetic wave absorption and crystal violet detection.

    PubMed

    Senapati, Samarpita; Srivastava, Suneel Kumar; Singh, Shiv Brat; Kulkarni, Ajit R

    2014-11-01

    The present work is focused on the preparation of Fe nanorods by the chemical reduction of FeCl3 (aq) using NaBH4 in the presence of glycerol as template followed by annealing of the product at 500°C in the presence of H2 gas flow. Subsequently, its surface has been modified by silica followed by silver nanoparticles to form silica coated Fe (Fe@SiO2) and Ag encapsulated Fe@SiO2 nanostructure employing the Stöber method and silver mirror reaction respectively. XRD pattern of the products confirmed the formation of bcc phase of iron and fcc phase of silver, though silica remained amorphous. FESEM images established the growth of iron nanorods from the annealed product and also formation of silica and silver coating on its surface. The appearance of the characteristics bands in FTIR confirmed the presence of SiO2 on the Fe surface. Magnetic measurements at room temperature indicated the ferromagnetic behavior of as prepared iron nanorods, Fe@SiO2 and silver encapsulated Fe@SiO2 nanostructures. All the samples exhibited strong microwave absorption property in the high frequency range (10GHz), though it is superior for Ag encapsulated Fe@SiO2 (-14.7dB) compared with Fe@SiO2 (-9.7dB) nanostructures of the same thickness. The synthesized Ag encapsulated Fe@SiO2 nanostructure also exhibited the SERS phenomena, which is useful in the detection of the carcinogenic dye crystal violet (CV) upto the concentration of 10(-10)M. All these findings clearly demonstrate that the Ag encapsulated Fe@SiO2 nanostructure could efficiently be used in the environmental remediation.

  8. Phase corrections in the optical interferometer for Si sphere volume measurements at NMIJ

    NASA Astrophysics Data System (ADS)

    Andreas, B.; Ferroglio, L.; Fujii, K.; Kuramoto, N.; Mana, G.

    2011-04-01

    To determine the volume of solid density standards, manufactured as Si-crystal spheres, an optical interferometer is used to measure their diameter at the NMIJ. To support and complement these measurements, the effect of the Gouy phase has been studied analytically and numerically. In measurement, the sphere is placed between the end-mirrors of a Fizeau cavity and the distances between the cavity mirrors and the sphere are measured, as well as the cavity length. The present analysis outlines a model of the interferometer operation and quantifies the Gouy-phase correction in the diameter measurement.

  9. Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal

    NASA Astrophysics Data System (ADS)

    Abe, T.; Takahashi, T.; Shirai, K.

    2017-02-01

    In order to reveal a steady distribution structure of point defects of no growing Si on the solid-liquid interface, the crystals were grown at a high pulling rate, which Vs becomes predominant, and the pulling was suddenly stopped. After restoring the variations of the crystal by the pulling-stop, the crystals were then left in prolonged contact with the melt. Finally, the crystals were detached and rapidly cooled to freeze point defects and then a distribution of the point defects of the as-grown crystals was observed. As a result, a dislocation loop (DL) region, which is formed by the aggregation of interstitials (Is), was formed over the solid-liquid interface and was surrounded with a Vs-and-Is-free recombination region (Rc-region), although the entire crystals had been Vs rich in the beginning. It was also revealed that the crystal on the solid-liquid interface after the prolonged contact with the melt can partially have a Rc-region to be directly in contact with the melt, unlike a defect distribution of a solid-liquid interface that has been growing. This experimental result contradicts a hypothesis of Voronkov's diffusion model, which always assumes the equilibrium concentrations of Vs and Is as the boundary condition for distribution of point defects on the growth interface. The results were disscussed from a qualitative point of view of temperature distribution and thermal stress by the pulling-stop.

  10. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  11. Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er

    NASA Astrophysics Data System (ADS)

    Zakharov, N. D.; Werner, P.; Vdovin, V. I.; Denisov, D. V.; Sobolev, N. A.; Gösele, U.

    The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x1019, small complexes consisting of tiny Er precipitates and four petals of ErSi2 platelets have been found additionally. The layer with [Er]= 8×1018 cm-3 was defect free. The formation of silicides from a supersaturated solid solution and Er precipitates is accompanied by the emission of vacancies V resulting in the formation of pores, V-V and V-Er complexes.

  12. Raman Spectroscopy Characterization of Se- Doped Bi{sub 12}SiO{sub 20} Crystals

    SciTech Connect

    Milenov, T. I.; Rafailov, P. M.; Yankova, L.; Veleva, M. N.; Dobreva, S.; Thomsen, C.; Egorysheva, A. V.; Skorikov, V. M.; Titorenkova, R.

    2010-01-21

    Crystals of BSO doped with Se are successfully grown by the Czochralski method. The measured concentration of Se is 1.75x10{sup 18} cm{sup -3} and of Fe is 6.4x10{sup 18} cm{sup -3}, i.e. the concentration of Fe is significantly increased. It is assumed that the doping takes place through the replacement 3Si{sup 4+}->(Se{sup 6+}+2Fe{sup 3+}). The doping-induced shift of the Raman-active A, E and F-modes is not significant and it is concluded that the lattice distortions caused by doping are very small in BSO crystals doped with Se at low concentrations. The doping with Se at high concentration leads to occasional second phase inclusions. It is observed that all A, E and F- modes in the Raman spectrum are downshifted with 2-5 cm{sup -1}. It is concluded that the doping with Se at high concentrations follows the same mechanism as those with low concentrations but the introduced lattice distortions are more significant.

  13. Extreme low thermal conductivity in nanoscale 3D Si phononic crystal with spherical pores.

    PubMed

    Yang, Lina; Yang, Nuo; Li, Baowen

    2014-01-01

    In this work, we propose a nanoscale three-dimensional (3D) Si phononic crystal (PnC) with spherical pores, which can reduce the thermal conductivity of bulk Si by a factor up to 10,000 times at room temperature. Thermal conductivity of Si PnCs depends on the porosity, for example, the thermal conductivity of Si PnCs with porosity 50% is 300 times smaller than that of bulk Si. The phonon participation ratio spectra demonstrate that more phonons are localized as the porosity increases. The thermal conductivity is insensitive to the temperature changes from room temperature to 1100 K. The extreme-low thermal conductivity could lead to a larger value of ZT than unity as the periodic structure affects very little the electric conductivity.

  14. The electro-optical behavior of liquid crystal molecules on the surface of SiO2 inorganic thin films.

    PubMed

    Sung, Shi-Joon; Yang, Kee-Jeong; Kim, Dae-Hwan; Do, Yun Seon; Kang, Jin-Kyu; Choi, Byeong-Dae

    2009-12-01

    Inorganic thin films are well known for the liquid crystal alignment layers for LCoS application due to the higher thermal and photochemical stability of inorganic materials. The switching time of liquid crystals is the important factor for the projection application and the faster switching time is required for the high quality display. The switching behavior of liquid crystal molecules on inorganic thin films might be closely related with the surface properties of the inorganic thin films. Therefore the understanding of surface properties of the inorganic thin films is required for the enhancement of the switching time of liquid crystals of LCoS devices. In this work, we prepared the SiO2 inorganic thin films and the electro-optical behavior of liquid crystal molecules on SiO2 thin film was investigated. The sputtering condition of SiO2 thin film was closely related with the thickness and the surface morphology of SiO2 thin film. The switching time of liquid crystals with negative dielectric constant on SiO2 inorganic thin films was dominantly affected by the size of protrusion on the surface of SiO2 thin film and the surface roughness of SiO2 thin film was also related with the switching time of liquid crystals. From these results, it is possible to prepare the SiO2 inorganic thin film suitable for the liquid crystal alignment layer for VAN LC mode.

  15. The Formation of Crystal Defects in a Fe-Mn-Si Alloy Under Cyclic Martensitic Transformations.

    PubMed

    Bondar, Vladimir I; Danilchenko, Vitaliy E; Iakovlev, Viktor E

    2016-12-01

    Formation of crystalline defects due to cyclic martensitic transformations (CMT) in the iron-manganese Fe-18 wt.% Mn-2 wt.% Si alloy was investigated using X-ray diffractometry. Conditions for accumulation of fragment sub-boundaries with low-angle misorientations and chaotic stacking faults in crystal lattice of austenite and ε-martensite were analyzed.

  16. Measurement of interfacial shear strength in SiC-fiber/Si3N4 composites

    NASA Technical Reports Server (NTRS)

    Laughner, James W.; Bhatt, Rham T.

    1989-01-01

    An indentation method for measuring shear strength in brittle matrix composites was applied to SiC-fiber/Si3N4-matrix samples. Three methods were used to manufacture the composites: reaction bonding of a Si/SiC preform, hot-pressing, and nitrogen-overpressure sintering. An indentation technique developed by Marshall for thin specimens was used to measure the shear strength of the interface and the interfacial friction stresses. This was done by inverting the sample after the initial push through and retesting the pushed fibers. SEM observations showed that the shear strength was determined by the degree of reaction between the fiber and the matrix unless the fiber was pushed out of its (well-bonded) sheath.

  17. Methods for growth of relatively large step-free SiC crystal surfaces

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  18. The kinetics of Al-Si spinel phase crystallization from calcined kaolin

    NASA Astrophysics Data System (ADS)

    Ptáček, Petr; Šoukal, František; Opravil, Tomáš; Nosková, Magdaléna; Havlica, Jaromír; Brandštetr, Jiří

    2010-11-01

    The crystallization of Al-Si spinel from medium ordered kaolin with high content of kaolinite was investigated using the differential thermal analysis (DTA). The apparent activation energy of the process was evaluated from the dependence of exothermic peak of crystallization on heating rate. Within the applied interval of heating rate (1-40 K min -1) the temperature of peak maximum increases from initial value of 1220.5 K in about 54.2 K. The apparent activation energy of the process 856±2 kJ mol -1was calculated using the Kissinger equation. The growth morphology of Al-Si spinel crystal was evaluated from the Avrami parameter. The average value of morphology parameter determined within the observed interval of heating rate is 3.08±0.03. This value indicates that crystallization mechanism of Al-Si spinel phase proceeds by bulk nucleation of the new phase with constant number of nuclei and that the three-dimensional growth of crystals is controlled by the reaction rate on the phases interface.

  19. Evolution of the Shape of Detached GeSi Crystals in Microgravity

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.

    2013-01-01

    A series of GeSi crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. An objective of these experiments is to understand the mechanisms of detached Bridgman growth, a process in which a gap exists between the growing semiconductor crystal and the crucible wall. Crystals grown without wall contact have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. Numerical calculations are used to determine the conditions in which a gap can exist. According to crystal shape stability theory, only some of these gap widths will be dynamically stable. Beginning with a crystal diameter that differs from stable conditions, the transient crystal growth process is analyzed. In microgravity, dynamic stability depends only on capillary effects and is decoupled from heat transfer. Depending on the initial conditions and growth parameters, the crystal shape will evolve towards the crucible wall, towards a stable gap width, or towards the center of the crucible, collapsing the meniscus.

  20. Numerical design of induction heating in the PVT growth of SiC crystal

    NASA Astrophysics Data System (ADS)

    Su, Juan; Chen, Xuejiang; Li, Yuan

    2014-09-01

    A 2-D numerical global model was applied to study effects of induction heating system on silicon carbide single crystal growth by a finite element method. Models with different coil radii and different electrical frequencies were carried out to investigate the relationship between coil design and SiC crystal growth process while the temperature of the monitoring point was fixed at about 2300 K. The predicted growth rate along the substrate surface was also compared and discussed. The results showed that the temperature distribution inside the furnace and the growth rate were affected by coil radius and electrical frequency. Finally, based on the analysis of simulation results, one reasonable range of coil radius and electrical frequency compromising a balance between higher growth rate, lower electrical power consumption, lower thermal stress in grown crystals and more stable operation of SiC powder was obtained.

  1. Low temperature rhombohedral single crystal SiGe epitaxy on c-plane sapphire

    NASA Astrophysics Data System (ADS)

    Duzik, Adam J.; Choi, Sang H.

    2016-04-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100°C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550°C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  2. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    NASA Technical Reports Server (NTRS)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  3. Thomson Scattering Measurements on HIT-SI3

    NASA Astrophysics Data System (ADS)

    Everson, C. J.; Morgan, K. D.; Jarboe, T. R.

    2015-11-01

    A multi-point Thomson Scattering diagnostic has been implemented on HIT-SI3 (Helicity Injected Torus - Steady Inductive 3) to measure electron temperature. The HIT-SI3 experiment is a modification of the original HIT-SI apparatus that uses three injectors instead of two. This modification alters the configuration of magnetic fields and thus the plasma behavior in the device. The scientific aim of HIT-SI3 is to develop a deeper understanding of how injector behavior and interactions influence current drive and plasma performance in the spheromak. The Thomson Scattering system includes a 20 J (1 GW pulse) Ruby laser that provides the incident beam, and collection optics that are installed such that measurements can be taken at four spatial locations in HIT-SI3 plasmas. For each measurement point, a 3-channel polychromator is used to detect the relative level of scattering. These measurements allow for the presence of temperature gradients in the spheromak to be investigated. Preliminary HIT-SI3 temperature data are presented and can be compared to predictions from computational models. Work supported by the D.O.E.

  4. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  5. Development of X-ray spectroscopic polarimetry with bent Si crystals and CFRP substrate

    NASA Astrophysics Data System (ADS)

    Iizuka, Ryo; Izumiya, Takanori; Tsuboi, Yohko

    2016-07-01

    The light from celestial objects includes four important quantities; images, time variation, energy spectrum, and polarization. In the field of X-ray astronomy, the capabilities of the former three have remarkably developed. On the other hand, the progress for the polarimetry is considerably delayed because of technical difficulties. In order to make a breakthrough in the field of X-ray polarimetry, we have developed a new type of optics for X-ray polarimetry. The system is collecting Bragg crystal with large area and very high sensitivity for the polarization dedicated to Fe-K lines. We adopt the 400 re ection of Si(100) crystals with high sensitivity for the polarization around Fe-K lines (6 7 keV), and bent the crystals with the wide X-ray band and high S/N ratio. Furthermore, to install small area of CCD to non-focal plane, it also has the spectroscopic capability with the better resolution than that of general X-ray CCD. Our previous development was to bent Si crystals to the cylindrical shape of circle and parabola with the DLC deposition. However, for the better optics for the X-ray polarimetry, the shape should be the paraboloid of revolution to collect X-rays with high S/N ratio. We searched for the method to bent the Si crystals to the shape of the paraboloid of revolution. We devised the method to mold the crystal and the CFRP substrate simultaneously pushed to the sophisticated foundation with the paraboloid of revolution. We developed the prototype of about 8 inch in radius of one-quater size. The crystals was also bent in the circumferential direction. Therefore, the image capability examined with optical parallel beam is 0.6 degree. In this thesis, we discussed the new design for X-ray spectroscopic polarimetry, the evaluation of image capability.

  6. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Hyatt, Mark J.

    1988-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  7. Silicon crystal morphologies during solidification refining from Al-Si melts

    NASA Astrophysics Data System (ADS)

    Ullah, Mohammad W.; Carlberg, Torbjörn

    2011-03-01

    To obtain a sound basis for further development of a refining process in which Si is precipitated from aluminium melts, a series of experiments have been performed in a Bridgman furnace. Compositions studied are in the range of 17-38% Si, and experiments have been carried out with the hot zone up and with the hot zone down to study the effects of flotation and sedimentation as well as those of different convection conditions on silicon precipitation. The similarity in density between liquid aluminium and silicon crystals implies that the melt convection is important for the possible separation of the crystals in a gravity field, but the crystal morphologies also have to be controlled to avoid aluminum inclusions. At lower silicon contents the silicon morphologies have a fish-bone or star-like shape but as the Si content increases the morphology changes to a plate-like structure, which becomes coarser with increasing Si concentration. The growth pattern for coarse plates growing as (1 1 1) platelets tend to form pockets of aluminium, which will end up as inclusions during dissolution of the matrix.

  8. Intersubband infrared absorption in Ge(x)Si(1-x)/Si superlattice by photocurrent measurement

    NASA Technical Reports Server (NTRS)

    Karunasiri, R. P. G.; Park, J. S.; Wang, K. L.; Cheng, Li-Jen

    1990-01-01

    The intersubband IR absorption of holes in a Ge(x)Si(1-x)/Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first of the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.

  9. Crystal structure and physical properties of the novel ternary intermetallics URuSi{sub 3-x} and U{sub 3}Ru{sub 2}Si{sub 7}

    SciTech Connect

    Pasturel, M.; Pikul, A.P.; Potel, M.; Roisnel, T.; Tougait, O.; Noel, H.; Kaczorowski, D.

    2010-08-15

    Two novel ternary intermediate phases, namely URuSi{sub 3-x} (x=0.11) and U{sub 3}Ru{sub 2}Si{sub 7} were found in the Si-rich part of the U-Ru-Si phase diagram. Single crystal X-ray diffraction measurements, carried out at room temperature, indicated that URuSi{sub 3-x} crystallizes in its own tetragonal type structure (space group P4/nmm, no. 129; unit cell parameters: a=12.108(1) A and c=9.810(1) A), being a derivative of the BaNiSn{sub 3}-type structure. U{sub 3}Ru{sub 2}Si{sub 7} adopts in turn a disordered orthorhombic La{sub 3}Co{sub 2}Sn{sub 7}-type structure (space group Cmmm, no. 65; unit cell parameters: a=4.063(1) A, b=24.972(2) A and c=4.072(1) A). As revealed by magnetization, electrical resistivity and specific heat measurements, both compounds order magnetically at low temperatures. Namely URuSi{sub 3-x} is a ferromagnet with T{sub C}=45 K, and U{sub 3}Ru{sub 2}Si{sub 7} shows ferrimagnetic behavior below T{sub C}=29 K. - Graphical abstract: Thermal dependence of the specific heat of the novel intermetallics URuSi{sub 3} and U{sub 3}Ru{sub 2}Si{sub 7}. The arrows mark temperatures of ferro- or ferrimagnetic phase transitions.

  10. Structural characterization of Lu{sub 1.8}Y{sub 0.2}SiO{sub 5} crystals

    SciTech Connect

    Chiriu, Daniele; Faedda, Nicola; Lehmann, Alessandra Geddo; Ricci, Pier Carlo; Anedda, Alberto; Desgreniers, Serge; Fortin, Emery

    2007-08-01

    The structural and vibrational properties of Lu{sub 1.8}Y{sub 0.2}SiO{sub 5} (LYSO) single crystals were investigated by means of Raman spectroscopy and x-ray diffraction measurements. Unit cell parameters and bond lengths were determined by Rietveld refinement of the collected x-ray diffraction powder spectra. By comparison with the vibrational spectra of the parent compounds Lu{sub 2}SiO{sub 5} and Y{sub 2}SiO{sub 5} and by using polarized Raman measurements, we propose the assignment of the principal vibrational modes of LYSO crystals. The strict connection of Raman spectra of the LYSO solid solution and of the pure lutetium and yttrium crystals, as well as the analysis of the polarized measurements, confirms that LYSO structure adopts the C2/c space group symmetry. The structural analogies of LYSO with the pure compound Lu{sub 2}SiO{sub 5} are further shown by means of high pressure Raman spectroscopy, and the possibility of considering the LYSO crystal analogous to the LSO structure with a tensile stress between 0.25 and 0.80 GPa is discussed.

  11. Detection of high energy muons with sub-20 ps timing resolution using L(Y)SO crystals and SiPM readout

    NASA Astrophysics Data System (ADS)

    Benaglia, A.; Gundacker, S.; Lecoq, P.; Lucchini, M. T.; Para, A.; Pauwels, K.; Auffray, E.

    2016-09-01

    Precise timing capability will be a key aspect of particle detectors at future high energy colliders, as the time information can help in the reconstruction of physics events at the high collision rate expected there. Other than being used in detectors for PET, fast scintillating crystals coupled to compact Silicon Photomultipliers (SiPMs) constitute a versatile system that can be exploited to realize an ad-hoc timing device to be hosted in a larger high energy physics detector. In this paper, we present the timing performance of LYSO:Ce and LSO:Ce codoped 0.4% Ca crystals coupled to SiPMs, as measured with 150 GeV muons at the CERN SPS H2 extraction line. Small crystals, with lengths ranging from 5 mm up to 30 mm and transverse size of 2 × 2mm2 or 3 × 3mm2 , were exposed to a 150 GeV muon beam. SiPMs from two different companies (Hamamatsu and FBK) were used to detect the light produced in the crystals. The best coincidence time resolution value of (14.5 ± 0.5) ps , corresponding to a single-detector time resolution of about 10 ps, is demonstrated for 5 mm long LSO:Ce,Ca crystals coupled to FBK SiPMs, when time walk corrections are applied.

  12. Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

    PubMed

    Liu, Yu; Wang, Gang; Wang, Shunchong; Yang, Jianhui; Chen, Liang; Qin, Xiubo; Song, Bo; Wang, Baoyi; Chen, Xiaolong

    2011-02-25

    Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.

  13. Photonic crystals with SiO2-Ag ``post-cap'' nanostructure coatings for surface enhanced Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Kim, Seok-min; Zhang, Wei; Cunningham, Brian T.

    2008-10-01

    We demonstrate that the resonant near fields of a large-area replica molded photonic crystal (PC) slab can efficiently couple light from a laser to SiO2-Ag "post-cap" nanostructures deposited on the PC surface by a glancing angle evaporation technique for achieving high surface enhanced Raman spectroscopy (SERS) enhancement factor. To examine the feasibility of the PC-SERS substrate, the simulated electric field around individual Ag particles and the measured Raman spectrum of trans-1,2-bis(4pyridyl)ethane on the PC-SERS substrate were compared with those from an ordinary glass substrate coated with the same SiO2-Ag nanostructures.

  14. One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

    SciTech Connect

    Liu, Ziheng Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A.

    2014-02-03

    In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.

  15. Measurements of Protein Crystal Face Growth Rates

    NASA Technical Reports Server (NTRS)

    Gorti, S.

    2014-01-01

    Protein crystal growth rates will be determined for several hyperthermophile proteins.; The growth rates will be assessed using available theoretical models, including kinetic roughening.; If/when kinetic roughening supersaturations are established, determinations of protein crystal quality over a range of supersaturations will also be assessed.; The results of our ground based effort may well address the existence of a correlation between fundamental growth mechanisms and protein crystal quality.

  16. Single-crystal X-ray diffraction study of Fe2SiO4 fayalite up to 31 GPa

    NASA Astrophysics Data System (ADS)

    Zhang, Jin S.; Hu, Yi; Shelton, Hannah; Kung, Jennifer; Dera, Przemyslaw

    2017-03-01

    Olivine is widely believed to be the most abundant mineral in the Earth's upper mantle. Here, we report structural refinement results for the Fe-end-member olivine, Fe2SiO4 fayalite, up to 31 GPa in diamond-anvil cell, using single-crystal synchrotron X-ray diffraction. Unit-cell parameters a, b, c and V, average Si-O Fe-O bond lengths, as well as Si-O Fe-O polyhedral volumes continuously decrease with increasing pressure. The pressure derivative of isothermal bulk modulus K_{T0}^' } is determined to be 4.0 (2) using third-order Birch-Murnaghan equation of state with ambient isothermal bulk modulus fixed to 135 GPa on the basis of previous Brillouin measurements. The Si-O tetrahedron is stiffer than the Fe-O octahedra, and the compression mechanism is dominated by Fe-O bond and Fe-O octahedral compression. Densities of olivine along 1600 and 900 K adiabats are calculated based on this study. The existence of metastable olivine inside the cold subduction slab could cause large positive buoyancy force against subduction, slow down the subduction and possibly affect the slab geometry.

  17. Crystallization and characterization of Y2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III; Lee, William E.; Sanders, W. A.; Kiser, J. D.

    1991-01-01

    Glasses in the yttria-silica system with 20 to 40 mol pct Y2O3 were subjected to recrystallization studies after melting at 1900 to 2100 C in W crucibles in 1 and 50 atm N2. The TEM and XRD results obtained indicate the presence of the delta, gamma, gamma prime, and beta-Y2Si2O7 crystalline phases, depending on melting and quenching conditions. Heat treatment in air at 1100 to 1600 C increased the amount of crystallization, and led to the formation of Y2SiO5, cristabalite, and polymorphs of Y2Si2O7. Also investigated were the effects of 5 and 10 wt pct zirconia additions.

  18. Crystallization and characterization of Y2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Drummond, C. H., III; Lee, W. E.; Sanders, W. A.; Kiser, J. D.

    1988-01-01

    Glasses in the yttria-silica system with 20-40 mol pct Y2O3 have been subjected to recrystallization studies after melting at 1900-2100 C in W crucibles in 1 and 50 atm N2. The TEM and XRD results obtained indicate the presence of the delta, gamma, gamma-prime, and beta-Y2Si2O7 crystalline phases, depending on melting and quenching conditions. Heat-treatment in air at 1100-1600 C increased the amount of crystallization, and led to the formation of Y2SiO5, cristobalite, and polymorphs of Y2Si2O7. Also investigated were the effects of 5 and 10 wt pct zirconia additions.

  19. Nucleation and crystallization of Na2O-2CaO-3SiO2 glass by differential thermal analysis

    NASA Technical Reports Server (NTRS)

    Xu, Xiaojie J.; Ray, Chandra S.; Day, Delbert E.

    1991-01-01

    DTA is presently used to characterize the nucleation and crystallization processes of the Na2O-2CaO-3SiO2 glass. A nucleation rate-temperaturelike curve is obtained by plotting either the reciprocal of the temperature corresponding to the crystallization peak maximum, or the height of the crystallization peak, as a function of nucleation temperature. The nucleation-temperature range for this glass composition, 550-650 C, and the maximum nucleation temperature of 600 + or - 5 C, are found to be in excellent agreement with those associated with the classical nucleation technique, followed by isothermal crystallization. It is noted that when most of the nucleation occurs during the DTA measurements, a modified Kissinger equation must be used to calculate the crystallization energy.

  20. Metal-induced crystallization of amorphous Si thin films assisted by atomic layer deposition of nickel oxide layers.

    PubMed

    So, Byung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Jo, DaiHui; Lee, Sun Sook; Chung, Taek-Mo; Kim, Chang Gyoun; An, Ki-Seok; Hwang, Jin-Ha

    2011-08-01

    Atomic layer deposition (ALD) of nickel oxide was applied to the nickel-induced crystallization of amorphous Si thin films. The nickel-induced crystallization was monitored as a function of annealing temperature and time using Raman spectroscopy. Since Raman spectroscopy allows for the numerical quantification of structural components, the incubation time and the crystallization rates were estimated as functions of the annealing temperature. The spatial locations of a nickel-based species, probably NiSi2, were investigated using X-ray photoelectron spectrometry. The formed NiSi2 seeds appeared to accelerate the crystallization kinetics in amorphous Si thin films deposited onto glass substrates. The ramifications of the atomic layer deposition are discussed with regard to large-panel displays, with special emphasis on the sophisticated control of the catalytic elements, especially nickel.

  1. A Linear Single-Crystal Bragg-Fresnel Lens With SiO2 Surface Structure

    SciTech Connect

    Kuznetsov, S.; Yunkin, V.; Drakopoulos, M.; Snigireva, I.; Snigirev, A.

    2004-05-12

    Bragg-Fresnel lens (BFL) as thin silicon dioxide strips grown on the surface of perfect silicon crystal was designed, manufactured and experimentally tested. In this case the BFL structure consists of a set of silicon dioxide rectangular shape etched zones arranged by the Fresnel zone law. The stress within coated and uncoated crystal regions is opposite in sign, whether tensile or compressive. The strain in the substrate crystal lattice directly underneath discontinuities in the deposited film give rise to phase difference between waves diffracted from coated and uncoated crystal regions. This phase difference is known to be dependent on the thickness and composition of film and substrate. The focusing properties of Si/SiO2 BFLs with 107 zones and 0.3 micrometer outermost zone width were experimentally studied as a function of the silicon oxide thickness in the range of 100 - 400 nanometers. It was shown that deformation Bragg-Fresnel lenses could effectively focus hard X-rays to a linear focal spot of about 2 microns. The efficiency of focusing was found to be about 16% at energy 10 keV. The developed lens design is a promising approach to extend the angular range of focusing by Bragg-Fresnel optical elements and to avoid some drawbacks of BFL properties related to aspect-ratio dependent etching.

  2. Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates

    NASA Astrophysics Data System (ADS)

    Bergamaschini, Roberto; Salvalaglio, Marco; Scaccabarozzi, Andrea; Isa, Fabio; Falub, Claudiu V.; Isella, Giovanni; von Känel, Hans; Montalenti, Francesco; Miglio, Leo

    2016-04-01

    A method for growing suspended Ge films on micron-sized Si pillars in Si(001) is discussed. In [C.V. Falub et al., Science 335 (2012) 1330] vertically aligned three-dimensional Ge crystals, separated by a few tens of nanometers, were obtained by depositing several micrometers of Ge using Low-Energy Plasma-Enhanced Chemical Vapor Deposition. Here a different regime of high growth temperature is exploited in order to induce the merging of the crystals into a connected structure eventually forming a continuous, two-dimensional film. The mechanisms leading to such a behavior are discussed with the aid of an effective model of crystal growth. Both the effects of deposition and curvature-driven surface diffusion are considered to reproduce the main features of coalescence. The key enabling role of high temperature is identified with the activation of the diffusion process on a time scale competitive with the deposition rate. We demonstrate the versatility of the deposition process, which allows to switch between the formation of individual crystals and a continuous suspended film simply by tuning the growth temperature.

  3. Synthesis and crystal structure of Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} containing [Si{sub 2}] dumbbells

    SciTech Connect

    Takayuki, Hashimoto; Yamane, Hisanori; Becker, Nils; Dronskowski, Richard

    2015-10-15

    Black, metallic luster, platelet single crystals of Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} were grown on a BN crucible wall by slowly cooling from 900 °C to 27 °C. X-ray diffraction analysis revealed that Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} crystallizes in an orthorhombic cell (a=17.6942(4) Å, b=34.1437(6) Å, c=10.0410(2) Å; space group Fdd2). Isolated nitridoborate anionic groups [BN{sub 2}]{sup 3–}, dumbbell-type Zintl polyanions [Si{sub 2}]{sup 2.8–}, and nitride anions N{sup 3–} are included in the structure. The structural formula is represented as (Ba{sup 2+}){sub 26}([BN{sub 2}]{sup 3–}){sub 12}[([Si{sub 2}]{sup 2.8–}){sub 1.25}(N{sup 3–}){sub 2×0.75}]{sub 2}. The [Si{sub 2}]{sup 2.8–} dumbbell with a Si–Si length of 2.177(5) Å has a bond order of 2.6, which is close to the triple bond of Si. - Graphical abstract: Single crystals of Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} grown by slow cooling from 900 °C have an orthorhombic crystal structure with space group Fdd2, containing nitridoborate anionic groups [BN{sub 2}]{sup 3–}, dumbbell-type Zintl polyanions [Si{sub 2}]{sup 2.8–}, and nitride anions N{sup 3–}. - Highlights: • A novel compound, Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27}, was synthesized by slow cooling from 900 °C. • Single crystal X-ray diffraction clarified a new crystal structure. • Anionic groups [BN{sub 2}]{sup 3–} and dumbbell-type Zintl polyanions [Si{sub 2}]{sup 2.8–} are contained. • The [Si{sub 2}]{sup 2.8–} dumbbell has a bond order of 2.6, which is close to the triple bond.

  4. The Crystal Structure of Cs 2TiSi 6O 15

    NASA Astrophysics Data System (ADS)

    Grey, I. E.; Roth, R. S.; Balmer, M. L.

    1997-06-01

    Crystals of a new titanosilicate phase, Cs2TiSi6O15, were grown from a cesium vanadate flux. The compound has monoclinic symmetry, space groupC2/c, witha=13.386(5),b=7.423(3),c=15.134(5) Å,β=107.71(3)°,Z=4. The crystal structure was solved using single crystal X-ray data (MoKαradiation) and refined toR(F)=0.039 for 1874 unique reflections. In the structure, isolated titanium-centred octahedra and silica-centred tetrahedra share all corners to form an open framework structure containing large cavities in which the cesium ions are located. Each cavity is bound by three 5-rings, two 6-rings, and two 8-rings. The cavities are linked via the 8-rings into channels parallel to [101]. The cesium ions occur in pairs along the channels, separated by 3.765(2) Å.

  5. Dynamic range measurement and calibration of SiPMs

    NASA Astrophysics Data System (ADS)

    Bretz, T.; Hebbeker, T.; Lauscher, M.; Middendorf, L.; Niggemann, T.; Schumacher, J.; Stephan, M.; Bueno, A.; Navas, S.; Ruiz, A. G.

    2016-03-01

    Photosensors have played and will continue to play an important role in high-energy and Astroparticle cutting-edge experiments. As of today, the most common photon detection device in use is the photomultiplier tube (PMT). However, we are witnessing rapid progress in the field and new devices now show very competitive features when compared to PMTs. Among those state-of-the-art photo detectors, silicon photomultipliers (SiPMs) are a relatively new kind of semiconductor whose potential is presently studied by many laboratories. Their characteristics make them a very attractive candidate for future Astroparticle physics experiments recording fluorescence and Cherenkov light, both in the atmosphere and on the ground. Such applications may require the measurement of the light flux on the sensor for the purpose of energy reconstruction. This is a complex task due to the limited dynamic range of SiPMs and the presence of thermal and correlated noise. In this work we study the response of three SiPM types in terms of delivered charge when exposed to light pulses in a broad range of intensities: from single photon to saturation. The influence of the pulse time duration and the SiPM over-voltage on the response are also quantified. Based on the observed behaviour, a method is presented to reconstruct the real number of photons impinging on the SiPM surface directly from the measured SiPM charge. A special emphasis is placed on the description of the methodology and experimental design used to perform the measurements.

  6. Characterization of stacked-crystal PET detector designs for measurement of both TOF and DOI

    NASA Astrophysics Data System (ADS)

    Schmall, Jeffrey P.; Surti, Suleman; Karp, Joel S.

    2015-05-01

    A PET detector with good timing resolution and two-level depth-of-interaction (DOI) discrimination can be constructed using a single-ended readout of scintillator stacks of Lanthanum Bromide (LaBr3), with various Cerium dopant concentrations, including pure Cerium Bromide (CeBr3). The stacked crystal geometry creates a unique signal shape for interactions occurring in each layer, which can be used to identify the DOI, while retaining the inherently good timing properties of LaBr3 and CeBr3. In this work, single pixel elements are used to optimize the choice of scintillator, coupling of layers, and type of photodetector, evaluating the performance using a fast, single-channel photomultiplier tube (PMT) and a single 4 × 4 mm2 silicon photomultiplier (SiPM). We also introduce a method to quantify and evaluate the DOI discrimination accuracy. From signal shape measurements using fast waveform sampling, we found that in addition to differences in signal rise times, between crystal layers, there were also differences in the signal fall times. A DOI accuracy of 98% was achieved using our classification method for a stacked crystal pair, consisting of a 15 mm long LaBr3(Ce:20%) crystal on top of a 15 mm long CeBr3 crystal, readout using a PMT. A DOI accuracy of 95% was measured with a stack of two, identical, 12 mm long, CeBr3 crystals. The DOI accuracy of this crystal pair was reduced to 91% when using a SiPM for readout. For the stack of two, 12 mm long, CeBr3 crystals, a coincidence timing resolution (average of timing results from the top and bottom layer) of 199 ps was measured using a PMT, and this was improved to 153 ps when using a SiPM. These results show that with stacked LaBr3/CeBr3 scintillators and fast waveform sampling nearly perfect DOI accuracy can be achieved with excellent timing resolution—timing resolution that is only minimally degraded compared to results from a single CeBr3 crystal of comparable length to the stacked crystals. The

  7. Characterization of stacked-crystal PET detector designs for measurement of both TOF and DOI.

    PubMed

    Schmall, Jeffrey P; Surti, Suleman; Karp, Joel S

    2015-05-07

    A PET detector with good timing resolution and two-level depth-of-interaction (DOI) discrimination can be constructed using a single-ended readout of scintillator stacks of Lanthanum Bromide (LaBr3), with various Cerium dopant concentrations, including pure Cerium Bromide (CeBr3). The stacked crystal geometry creates a unique signal shape for interactions occurring in each layer, which can be used to identify the DOI, while retaining the inherently good timing properties of LaBr3 and CeBr3. In this work, single pixel elements are used to optimize the choice of scintillator, coupling of layers, and type of photodetector, evaluating the performance using a fast, single-channel photomultiplier tube (PMT) and a single 4 × 4 mm(2) silicon photomultiplier (SiPM). We also introduce a method to quantify and evaluate the DOI discrimination accuracy. From signal shape measurements using fast waveform sampling, we found that in addition to differences in signal rise times, between crystal layers, there were also differences in the signal fall times. A DOI accuracy of 98% was achieved using our classification method for a stacked crystal pair, consisting of a 15 mm long LaBr3(Ce:20%) crystal on top of a 15 mm long CeBr3 crystal, readout using a PMT. A DOI accuracy of 95% was measured with a stack of two, identical, 12 mm long, CeBr3 crystals. The DOI accuracy of this crystal pair was reduced to 91% when using a SiPM for readout. For the stack of two, 12 mm long, CeBr3 crystals, a coincidence timing resolution (average of timing results from the top and bottom layer) of 199 ps was measured using a PMT, and this was improved to 153 ps when using a SiPM. These results show that with stacked LaBr3/CeBr3 scintillators and fast waveform sampling nearly perfect DOI accuracy can be achieved with excellent timing resolution-timing resolution that is only minimally degraded compared to results from a single CeBr3 crystal of comparable length to the stacked crystals. The

  8. Characterization of stacked-crystal PET detector designs for measurement of both TOF and DOI

    PubMed Central

    Schmall, Jeffrey P; Surti, Suleman; Karp, Joel S

    2015-01-01

    A PET detector with good timing resolution and two-level depth-of-interaction (DOI) discrimination can be constructed using a single-ended readout of scintillator stacks of Lanthanum Bromide (LaBr3), with various Cerium dopant concentrations, including pure Cerium Bromide (CeBr3). The stacked crystal geometry creates a unique signal shape for interactions occurring in each layer, which can be used to identify the DOI, while retaining the inherently good timing properties of LaBr3 and CeBr3. In this work, single pixel elements are used to optimize the choice of scintillator, coupling of layers, and type of photodetector, evaluating the performance using a fast, single-channel photomultiplier tube (PMT) and a single 4×4 mm2 silicon photomultiplier (SiPM). We also introduce a method to quantify and evaluate the DOI discrimination accuracy. From signal shape measurements using fast waveform sampling, we found that in addition to differences in signal rise times, between crystal layers, there were also differences in the signal fall times. A DOI accuracy of 98% was achieved using our classification method for a stacked crystal pair, consisting of a 15-mm long LaBr3(Ce:20%) crystal on top of a 15-mm long CeBr3 crystal, readout using a PMT. A DOI accuracy of 95% was measured with a stack of two, identical, 12-mm long, CeBr3 crystals. The DOI accuracy of this crystal pair was reduced to 91% when using a SiPM for readout. For the stack of two, 12-mm long, CeBr3 crystals, a coincidence timing resolution (average of timing results from the top and bottom layer) of 199 ps was measured using a PMT, and this was improved to 153 ps when using a SiPM. These results show that with stacked LaBr3/CeBr3 scintillators and fast waveform sampling nearly perfect DOI accuracy can be achieved with excellent timing resolution—timing resolution that is only minimally degraded compared to results from a single CeBr3 crystal of comparable length to the stacked crystals. The interface in the

  9. SU-C-201-01: Investigation of the Effects of Scintillator Surface Treatment On Light Output Measurements with SiPM Detectors

    SciTech Connect

    Valenciaga, Y; Prout, D; Chatziioannou, A

    2015-06-15

    Purpose: To examine the effect of different scintillator surface treatments (BGO crystals) on the fraction of scintillation photons that exit the crystal and reach the photodetector (SiPM). Methods: Positron Emission Tomography is based on the detection of light that exits scintillator crystals, after annihilation photons deposit energy inside these crystals. A considerable fraction of the scintillation light gets trapped or absorbed after going through multiple internal reflections on the interfaces surrounding the crystals. BGO scintillator crystals generate considerably less scintillation light than crystals made of LSO and its variants. Therefore, it is crucial that the small amount of light produced by BGO exits towards the light detector. The surface treatment of scintillator crystals is among the factors affecting the ability of scintillation light to reach the detectors. In this study, we analyze the effect of different crystal surface treatments on the fraction of scintillation light that is detected by the solid state photodetector (SiPM), once energy is deposited inside a BGO crystal. Simulations were performed by a Monte Carlo based software named GATE, and validated by measurements from individual BGO crystals coupled to Philips digital-SiPM sensor (DPC-3200). Results: The results showed an increment in light collection of about 4 percent when only the exit face of the BGO crystal, is unpolished; compared to when all the faces are polished. However, leaving several faces unpolished caused a reduction of at least 10 percent of light output when the interaction occurs as far from the exit face of the crystal as possible compared to when it occurs very close to the exit face. Conclusion: This work demonstrates the advantages on light collection from leaving unpolished the exit face of BGO crystals. The configuration with best light output will be used to obtain flood images from BGO crystal arrays coupled to SiPM sensors.

  10. Searching for the Best Protein Crystals: Synchrotron Based Measurements of Protein Crystal Quality

    NASA Technical Reports Server (NTRS)

    Borgstahl, Gloria; Snell, Edward H.; Bellamy, Henry; Pangborn, Walter; Nelson, Chris; Arvai, Andy; Ohren, Jeff; Pokross, Matt

    1999-01-01

    We are developing X-ray diffraction methods to quantitatively evaluate the quality of protein crystals. The ultimate use for these crystal quality will be to optimize crystal growth and freezing conditions to obtain the best diffraction data. We have combined super fine-phi slicing with highly monochromatic, low divergence synchrotron radiation and the ADSC Quantum 4 CCD detector at the Stanford Synchrotron Radiation laboratory beamline 1.5 to accurately measure crystal mosaicity. Comparisons of microgravity versus earth-grown insulin crystals using these methods will be presented.

  11. Preparation of Si nano-crystals with controlled oxidation state from SiO disproportionated by ZrO2 ball-milling

    NASA Astrophysics Data System (ADS)

    Okamoto, Yuji; Harada, Yoshitomo; Ohta, Narumi; Takada, Kazunori; Sumiya, Masatomo

    2016-09-01

    We demonstrate that a SiO disproportionation reaction can be achieved simply by high energy mechanochemical milling. The planetary ball-milling of ZrO2 for a few minutes generated Si nano-crystals. Milling conditions including rotation speed, ball number, milling time, and type of ball material were able to control the oxidation states of Si. The ball-milled SiO powder was tested as an anode of a lithium battery. ZrO2 contamination from the vial and balls was eliminated by dipping the ball-milled SiO powder in (NH4)HSO4 molten salt and heating for 5 min. The disproportionated SiO powder showed characteristics comparable to those of a powder prepared by a conventional heating process taking several hours.

  12. Crystal structure and superconductivity in the Th-doped LaPtSi compounds

    NASA Astrophysics Data System (ADS)

    Chen, J. Y.; Sung, H. H.; Syu, K. J.; Lee, W. H.

    2010-12-01

    As observed with X-ray powder diffraction, the tetragonal structure of the parent compound LaPtSi, which crystallizes in the LaPtSi-type structure with space group I41md, is retained in (La1-xThx)PtSi up to the solubility limit near x = 0.5. By considering the size factor of Hume-Rothery theory of alloy phase formation, it is not marvelous that the extensive solid solutions cannot be fully completed in (La1-xThx)PtSi. We present the room temperature powder X-ray diffraction patterns, the room temperature lattice parameters and the dc magnetic susceptibility between 1.8 and 4.0 K for three single phase polycrystalline samples in (La1-xThx)PtSi with x = 0, 0.25 and 0.50. The refined lattice parameters show that both the a-axis and the volume of the unit cell v contract clearly, though the c-axis gives a less percentage expansion due to doping with thorium. It is found that the change in Tc with x is similar to the change in the lattice parameter a or v, which indicates that the stiffening of the lattice under pressure has a dominant effect on the decrease in Tc in this system.

  13. Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped Lu2SiO5 crystal

    NASA Astrophysics Data System (ADS)

    Li, D. Z.; Xu, X. D.; Zhou, D. H.; Xia, C. T.; Wu, F.; Xu, J.; Cong, Z. H.; Zhang, J.; Tang, D. Y.

    2011-01-01

    High quality Nd3+-doped Lu2SiO5 (Nd:LSO) crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Room temperature absorption and fluorescence spectra and fluorescence lifetime of the Nd:LSO crystal were measured and analyzed. The Judd-Ofelt intensity parameters Ω2,4,6 were obtained to be 2.59, 4.90, and 5.96×10-20 cm2, respectively. The absorption and emission cross sections and the branching ratios were calculated. The peak emission cross section is 5.8 and 6.6×10-20 cm2 at 1075 and 1079 nm, respectively, with full width at half maximum (FWHM) of 2.8 and 5.1 nm in turn. Pumped by a laser diode, a maximum 2.54 W continuous-wave laser output has been obtained with a slope efficiency of 32%. All the results show that this crystal is a promising laser material.

  14. A review on solar cells from Si-single crystals to porous materials and quantum dots

    PubMed Central

    Badawy, Waheed A.

    2013-01-01

    Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed. PMID:25750746

  15. A review on solar cells from Si-single crystals to porous materials and quantum dots.

    PubMed

    Badawy, Waheed A

    2015-03-01

    Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.

  16. Synthesis, crystal structure and properties of Mg3B36Si9C and related rare earth compounds RE3-xB36Si9C (RE=Y, Gd-Lu)

    NASA Astrophysics Data System (ADS)

    Ludwig, Thilo; Pediaditakis, Alexis; Sagawe, Vanessa; Hillebrecht, Harald

    2013-08-01

    We report on the synthesis and characterisation of Mg3B36Si9C. Black single crystals of hexagonal shape were yielded from the elements at 1600 °C in h-BN crucibles welded in Ta ampoules. The crystal structure (space group R3barm, a=10.0793(13) Å, c=16.372(3) Å, 660 refl., 51 param., R1(F)=0.019; wR2(F2)=0.051) is characterized by a Kagome-net of B12 icosahedra, ethane like Si8-units and disordered SiC-dumbbells. Vibrational spectra show typical features of boron-rich borides and Zintl phases. Mg3B36Si9C is stable against HF/HNO3 and conc. NaOH. The micro-hardness is 17.0 GPa (Vickers) and 14.5 GPa (Knoop), respectively. According to simple electron counting rules Mg3B36Si9C is an electron precise compound. Band structure calculations reveal a band gap of 1.0 eV in agreement to the black colour. Interatomic distances obtained from the refinement of X-ray data are biased and falsified by the disorder of the SiC-dumbbell. The most evident structural parameters were obtained by relaxation calculation. Composition and carbon content were confirmed by WDX measurements. The small but significant carbon content is necessary by structural reasons and frequently caused by contaminations. The rare earth compounds RE3-xB36Si9C (RE=Y, Dy-Lu) are isotypic. Single crystals were grown from a silicon melt and their structures refined. The partial occupation of the RE-sites fits to the requirements of an electron-precise composition. According to the displacement parameters a relaxation should be applied to obtain correct structural parameters.

  17. Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

    NASA Astrophysics Data System (ADS)

    Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen

    2015-11-01

    In this letter, the metal induced crystallization (MIC) process is used in the Si-based conductive bridging resistive random access memory (CBRAM) application. The amorphous Si (a-Si) is transformed to crystallized poly-silicon (poly-Si) at a low temperature by using Ni metal for inducing poly-Si to provide the resistive switching. The MIC process can produce a highly preferred orientation poly-Si film, which can create the exact paths or grain boundaries through the top and down electrodes in the present CBRAM device. The grain boundary in MIC poly-Si layer can confine the conductive filament of metal bridging growth in it, which can improve the switching fluctuation behavior in the nonvolatile memory application. Compared with the a-Si based device, a significant improvement in terms of resistive switching parameters such as stability and resistance distribution is demonstrated in the MIC poly-Si CBRAM device. Moreover, the well-behaved memory performance, such as high ON/OFF resistance ratio (4 order), a large AC endurance (106), and good retention characteristics (104 s at 125 °C) are achieved in the Cu/poly-Si/n+-Si CMOS compatible cross bar structure.

  18. Stability of a Crystal Oscillator, Type Si530, Inside and Beyond its Specified Operating Temperature Range

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Hammoud, Ahmad

    2011-01-01

    Data acquisition and control systems depend on timing signals for proper operation and required accuracy. These clocked signals are typically provided by some form of an oscillator set to produce a repetitive, defined signal at a given frequency. Crystal oscillators are commonly used because they are less expensive, smaller, and more reliable than other types of oscillators. Because of the inherent characteristics of the crystal, the oscillators exhibit excellent frequency stability within the specified range of operational temperature. In some cases, however, some compensation techniques are adopted to further improve the thermal stability of a crystal oscillator. Very limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) crystal oscillators at temperatures beyond the manufacturer's specified operating temperature range. This information is very crucial if any of these parts were to be used in circuits designed for use in space exploration missions where extreme temperature swings and thermal cycling are encountered. This report presents the results of the work obtained on the operation of Silicon Laboratories crystal oscillator, type Si530, under specified and extreme ambient temperatures.

  19. Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO{sub 2} substrates

    SciTech Connect

    Kurosawa, Masashi; Sadoh, Taizoh; Miyao, Masanobu

    2014-11-07

    Orientation-controlled crystalline Si films on insulating substrates are strongly required to achieve high-performance thin-film devices for next-generation electronics. We have comprehensively investigated the layer-exchange kinetics of Al-induced crystallization (AIC) in stacked structures, i.e., amorphous-Si/Al-oxide/Al/SiO{sub 2}-substrates, as a function of the air-exposure time of Al surfaces (t{sub air}: 0–24 h) to form Al-oxide interface-layers, the thickness of Al and Si layers (d{sub Al,} d{sub Si}: 50–200 nm), the annealing temperature (450–500 °C), and the annealing time (0–50 h). It has been clarified that longer t{sub air} (>60 min) and/or thinner d{sub Al} and d{sub Si} (<50 nm) lead to the (111) oriented growth; in contrast, shorter t{sub air} (<60 min) and/or thicker d{sub Al} and d{sub Si} (>100 nm) lead to the (100) oriented growth. No correlation between the annealing temperature and the crystal orientation is observed. Detailed analysis reveals that the layer-exchange kinetics are dominated by “supply-limited” processing, i.e., diffusion of Si atoms into Al layers through Al-oxide layer. Based on the growth rate dependent Si concentration profiles in Al layers, and the free-energy of Si at Al-oxide/Al or Al/SiO{sub 2} interfaces, a comprehensive model for layer-exchange growth is proposed. This well explains the experimental results of not only Si-AIC but also another material system such as gold-induced crystallization of Ge. In this way, a growth technique achieving the orientation-controlled Si crystals on insulating substrates is established from both technological and scientific points of view.

  20. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1999-01-01

    Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

  1. Formation, stability, and crystal structure of σ phase in Mo-Re-Si alloys

    SciTech Connect

    Bei, Hongbin; Yang, Ying; Viswanathan, G.; Rawn, Claudia J; George, Easo P; Tiley, Jaimie; Chang, Y. Austin

    2010-01-01

    The formation, stability and crystal structure of the {sigma} phase in Mo-Re-Si alloys were investigated. Guided by thermodynamic calculations, six critically selected alloys were arc melted and annealed at 1600 C for 150 h. Their as-cast and annealed microstructures, including phase fractions and distributions, the compositions of the constituent phases and the crystal structure of the {sigma} phase were analyzed by thermodynamic modeling coupled with experimental characterization by scanning electron microscopy, electron probe microanalysis, X-ray diffraction and transmission electron microscopy. Two key findings resulted from this work. One is the large homogeneity range of the {sigma} phase region, extending from binary Mo-Re to ternary Mo-Re-Si. The other is the formation of a {sigma} phase in Mo-rich alloys either through the peritectic reaction of liquid + Mo{sub ss} {yields} {sigma} or primary solidification. These findings are important in understanding the effects of Re on the microstructure and providing guidance on the design of Mo-Re-Si alloys.

  2. Single crystal growth and characterization of the reduced barium sodium siliconiobate, Ba3Na0.32Nb6O12(Si2O7)2

    NASA Astrophysics Data System (ADS)

    Cortese, Anthony J.; Wilkins, Branford; Smith, Mark D.; Morrison, Gregory; zur Loye, Hans-Conrad

    2015-10-01

    Single crystals of Ba3Na0.32Nb6O12(Si2O7)2 were grown for the first time. The use of an alkali/alkaline earth eutectic flux facilitated the crystal growth. Ba3Na0.32Nb6O12(Si2O7)2, a mixed valent Nb(V)/Nb(IV) compound, crystallizes in the noncentrosymmetric hexagonal space group P-62m with a = 8.9998(10) Å and c = 7.8119(17) Å. The temperature dependence of the magnetic susceptibility was measured and found to be paramagnetic across the entire 2-300 K temperature range measured. Although noncentrosymmetric, Ba3Na0.32Nb6O12(Si2O7)2 was not found to be second harmonic generation active. Ba3Na0.32Nb6O12(Si2O7)2 was further characterized by IR and UV/Vis spectroscopies.

  3. CRYSTALLIZATION EXPERIMENTS OF SiO{sub 2}-RICH AMORPHOUS SILICATE: APPLICATION TO SiO{sub 2}-RICH CIRCUMSTELLAR DUST AND GEMS

    SciTech Connect

    Matsuno, Junya; Tsuchiyama, Akira; Koike, Chiyoe; Chihara, Hiroki; Imai, Yuta; Noguchi, Ryo; Ohi, Shugo

    2012-07-10

    Crystallization experiments of relatively SiO{sub 2}-rich amorphous silicates using the mean chemical composition of the silicate portions in GEMS (glass with embedded metal and sulfide), which is a major component in anhydrous interplanetary dust particles and a primitive material of the early solar system, were performed to understand the presence of crystalline silica around young stars and crystallization in GEMS. Olivine crystallized at {approx}900-1400 K, probably prior to pyroxene. Three different polymorphs of pyroxene, protopyroxene, orthopyroxene, and clinopyroxene, were identified at {>=}1000 K. Cristobalite, which is one of the silica polymorphs, crystallized only at high temperatures ({>=}1500 K). We obtained time-temperature-transformation (TTT) crystallization diagrams. These results suggest that crystallization of a silica polymorph is kinetically difficult in a day or so at {approx}900-1400 K even for the SiO{sub 2}-saturated composition, while the crystallization might be possible after metastable olivine crystallization if duration is long enough. The TTT diagram also indicates that the GEMS cooling timescale was {approx}10{sup 5} s if they condensed at 1000 K as amorphous silicates and annealed during cooling after the condensation.

  4. Crystal growth kinetics of ultra-thin ZrO2 film on Si by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Faruque, Sk Abdul Kader Md; Debnath, Debika; Giri, Bimalesh; Chakraborty, Supratic

    2017-02-01

    Crystal growth kinetics of thin ZrO2 film deposited on Si is described in the framework of Johnson, Mehl and Avrami (JMA) equation and Kissinger method. Differential scanning calorimetry is employed here to determine the Avrami exponent and the activation energy of crystalline transition from the amorphous nature of ZrO2/Si. The activation energy is found to be 0.77 ± 0.06 eV, estimated from the slope of Kissinger plot. From the variation of Avrami exponent, it is observed that the crystallization of ZrO2 begins at the ZrO2/Si interface and grows normal to the interface at lower temperature range. The crystallization grows laterally, identified as heterogeneous nucleation at the grain boundary that dominates at higher temperature range indicating an increase in its grain size without increasing the number of grains. Only the growth along the grain boundary occurs during heterogeneous crystallization.

  5. Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform.

    PubMed

    Birowosuto, Muhammad Danang; Yokoo, Atsushi; Zhang, Guoqiang; Tateno, Kouta; Kuramochi, Eiichi; Taniyama, Hideaki; Takiguchi, Masato; Notomi, Masaya

    2014-03-01

    Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light confinement or efficient coupling with photonic circuits is not straightforward and remains a challenge. Here we show that a high-Q nanocavity can be created by placing a single III–V semiconductor nanowire with a diameter of under 100 nm in a grooved waveguide in a Si photonic crystal, by means of nanoprobe manipulation. We observe very fast spontaneous emission (91 ps) from nanowires accelerated by the strong Purcell enhancement in nanocavities, which proves that very strong light confinement can be achieved. Furthermore, this system enables us to move the nanocavity anywhere along the waveguide. This configuration provides a significant degree of flexibility in integrated photonics and permits the addition and displacement of various functionalities of III–V nanocavity devices in Si photonic circuits.

  6. Effects of surface crystallization and oxidation in nanocrystalline FeNbCuSiB(P) ribbons

    NASA Astrophysics Data System (ADS)

    Butvinová, B.; Butvin, P.; Brzózka, K.; Kuzminski, M.; Maťko, I.; Švec, P., Sr.; Chromčíková, M.

    2017-02-01

    Si-poor Fe74Nb3Cu1Si8B14-xPx, (x=0, 3) nanocrystalline ribbon-form alloys often form surfaces, which exert in-plane force on underlying ribbon interior when nanocrystallized in even modest presence of oxygen. Mostly unwanted hard-ribbon-axis magnetic anisotropy is standard result. Essential sources of the surface-caused stress have been sought and influence of P instead of B substitution on this effect was studied too. Preferred surface crystallization (PSC) was found to be the major reason. However P substitution suppresses PSC and promotes Fe-oxide formation, which eases the stress, softens the surfaces and provides different annealing evolution of surface properties.

  7. Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

    NASA Astrophysics Data System (ADS)

    Qiusheng, Y.; Senkai, C.; Jisheng, P.

    2015-03-01

    Different machining processes were used in the single crystal SiC wafer machining. SEM was used to observe the surface morphology and a cross-sectional cleavages microscopy method was used for subsurface cracks detection. Surface and subsurface cracks characteristics of single crystal SiC wafer in abrasive machining were analysed. The results show that the surface and subsurface cracks system of single crystal SiC wafer in abrasive machining including radial crack, lateral crack and the median crack. In lapping process, material removal is dominated by brittle removal. Lots of chipping pits were found on the lapping surface. With the particle size becomes smaller, the surface roughness and subsurface crack depth decreases. When the particle size was changed to 1.5µm, the surface roughness Ra was reduced to 24.0nm and the maximum subsurface crack was 1.2µm. The efficiency of grinding is higher than lapping. Plastic removal can be achieved by changing the process parameters. Material removal was mostly in brittle fracture when grinding with 325# diamond wheel. Plow scratches and chipping pits were found on the ground surface. The surface roughness Ra was 17.7nm and maximum subsurface crack depth was 5.8 µm. When grinding with 8000# diamond wheel, the material removal was in plastic flow. Plastic scratches were found on the surface. A smooth surface of roughness Ra 2.5nm without any subsurface cracks was obtained. Atomic scale removal was possible in cluster magnetorheological finishing with diamond abrasive size of 0.5 µm. A super smooth surface eventually obtained with a roughness of Ra 0.4nm without any subsurface crack.

  8. Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

    SciTech Connect

    Qiusheng, Y. Senkai, C. Jisheng, P.

    2015-03-30

    Different machining processes were used in the single crystal SiC wafer machining. SEM was used to observe the surface morphology and a cross-sectional cleavages microscopy method was used for subsurface cracks detection. Surface and subsurface cracks characteristics of single crystal SiC wafer in abrasive machining were analysed. The results show that the surface and subsurface cracks system of single crystal SiC wafer in abrasive machining including radial crack, lateral crack and the median crack. In lapping process, material removal is dominated by brittle removal. Lots of chipping pits were found on the lapping surface. With the particle size becomes smaller, the surface roughness and subsurface crack depth decreases. When the particle size was changed to 1.5µm, the surface roughness Ra was reduced to 24.0nm and the maximum subsurface crack was 1.2µm. The efficiency of grinding is higher than lapping. Plastic removal can be achieved by changing the process parameters. Material removal was mostly in brittle fracture when grinding with 325# diamond wheel. Plow scratches and chipping pits were found on the ground surface. The surface roughness Ra was 17.7nm and maximum subsurface crack depth was 5.8 µm. When grinding with 8000# diamond wheel, the material removal was in plastic flow. Plastic scratches were found on the surface. A smooth surface of roughness Ra 2.5nm without any subsurface cracks was obtained. Atomic scale removal was possible in cluster magnetorheological finishing with diamond abrasive size of 0.5 µm. A super smooth surface eventually obtained with a roughness of Ra 0.4nm without any subsurface crack.

  9. Crystal structures and magnetic properties of CeAu{sub 4}Si{sub 2} and CeAu{sub 2}Si{sub 2}

    SciTech Connect

    Sefat, Athena S. Palasyuk, Andriy M.; Bud'ko, Sergey L.; Corbett, John D.; Canfield, Paul C.

    2008-02-15

    Single crystals of CeAu{sub 4}Si{sub 2} and CeAu{sub 2}Si{sub 2} have been grown out of ternary fluxes rich in Au, and the former, also by sintering the stoichiometric composition at 750 deg. C. The single-crystal X-ray refinement result for CeAu{sub 4}Si{sub 2} is orthorhombic, Cmmm (No. 65, Z=2), different from a tetragonal result found from an X-ray powder diffraction refinement [H. Nakashima, et al., J. Alloys Compds. 424 (2006) 7]. For CeAu{sub 2}Si{sub 2}, this is the first report of the stoichiometric crystalline phase, in the known tetragonal I4/mmm structure. The anisotropic field- and temperature-dependent magnetizations, as well as specific heat and resistivity data are compared. Although both compounds have related structural packing, they present unique magnetic features. CeAu{sub 2}Si{sub 2} is a typical antiferromagnet with T{sub N}=8.8(1) K and CeAu{sub 4}Si{sub 2} features a ferromagnetic component below T{sub c}=3.3(1) K. Both phases have effective moments close in value to that of free Ce{sup 3+}. - Graphical abstract: The magnetization versus applied field for CeAu{sub 2}Si{sub 2} along two crystallographic directions.

  10. Fabrication of ordered poly(methyl methacrylate) nanobowl arrays using SiO2 colloidal crystal templates.

    PubMed

    Deng, Lier; Fu, Ming; Tao, Yinglei; Guo, Xiaoyun

    2014-06-01

    A simple approach is presented for the fabrication of poly(methyl methacrylate) (PMMA) nanobowl arrays over cm2 areas using SiO2 colloidal crystal templates. SiO2 colloidal crystal templates were prepared on a clean glass substrate by self-assembled SiO2 spheres of 410 nm in diameter. The air between the silica spheres was filled by the superfluous monomer of PMMA that can be subsequently polymerized. After infiltration, the SiO2-PMMA templates were immersed in a 3 wt% hydrofluoric acid (HF) aqueous solution. After 24 h, silica spheres were etched and a free-standing nanobowl sheet was obtained. The size of the nanobowls could be controlled by the size of the SiO2 spheres and the area of the nanobowl sheet could be altered by the size of the glass substrate.

  11. Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

    NASA Astrophysics Data System (ADS)

    Pezzoli, Fabio; Giorgioni, Anna; Gallacher, Kevin; Isa, Fabio; Biagioni, Paolo; Millar, Ross W.; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Isella, Giovanni; Paul, Douglas J.; Miglio, Leo

    2016-06-01

    We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

  12. A direct measurement of the electronic structure of Si nanocrystals and its effect on optoelectronic properties

    SciTech Connect

    Mustafeez, Waqas; Salleo, Alberto; Majumdar, Arka; Vučković, Jelena

    2014-03-14

    Since reports that silicon nanocrystals (Si-NCs) can exhibit direct transition emission, the silicon laser field is at a juncture where the importance of this discovery needs to be evaluated. Most theoretical models predicted a monotonic increase in the bandgap and experimental information currently available on the electronic structure at the Γ valley of these promising materials is circumstantial as it is obtained from emission measurements where competing non-radiative relaxation and recombination processes only provide an incomplete picture of the electronic structure of Si-NCs. Optical absorption, the most immediate probe of the electronic structure beyond the band-edges, showing the evolution of the Γ valley states with nanocrystal size has not been measured. Here, we show such measurements, performed with high dynamic range, allowing us to observe directly the effect of crystal size on the Γ valley splitting far above the band-edges. We show that the splitting is 100 s of meV more pronounced than predicted by pseudo potential calculations and Luttinger-Kohn model. We also show that ultrafast red-shifting emission can be observed in plasma enhanced chemical vapor deposition prepared Si-NCs.

  13. Modeling of Si/Ge based two-dimensional photonic crystal nanocavity

    NASA Astrophysics Data System (ADS)

    Rahmasari, Lita; Zain, Ahmad Rifqi M.; Hashim, Abdul Manaf

    2016-11-01

    This paper has theoretically demonstrated the variation of geometrical parameters for L3 cavity photonic crystal. We have tuned a lattice constant of the photonic crystal to optimize the device. 2D photonic crystal structures with L3 configuration arranged in the triangular lattice is simulated using 2D FDTD (Finite Difference Time Domain) approach. We have tuned the stop band within 1451 nm to 1532 nm wavelength windows. This stop band was achieved with a hole diameter of 150 nm and lattice constant, a of 350 nm. We have also varied the lattice constant to 320 nm, 330 nm, 340 nm, 350 nm and 360 nm respectively by keeping the hole diameter to 150 nm. The Q factor does not show any significant changes with different lattice constant. The highest Q factor of approximately 7000 was obtained with the lattice constant of 350 nm and hole diameter of 150 nm at the resonance wavelength of 1472 nm. The resonance excited by the L3 photonic crystal cavity structure in Si/Ge layer grown on silicon-on-insulator were achieved at 1476 nm with a right combination of lattice constant and hole diameters. This resonance wavelength was obtained at lattice constant 360 nm and hole diameter 150 nm. The highest optical transmission spectra also achieved at this parameter was approximately 30%. The resonance wavelength between this two geometry parameter was almost the same. This result can be utilized in telecommunication wavelength for many applications in the photonic area.

  14. Timing performance measurements of Si-PM-based LGSO phoswich detectors

    NASA Astrophysics Data System (ADS)

    Yamamoto, Seiichi; Kobayashi, Takahiro; Okumura, Satoshi; Yeom, Jung Yeol

    2016-06-01

    Since the timing resolution was significantly improved using silicon photomultipliers (Si-PMs) combined with fast scintillators, we expect that phoswich detectors will be used in future TOF-PET systems. However, no practical phoswich detector has been proposed for TOF-PET detectors. We conducted timing performance measurements of phoswich detectors comprised of two types of Ce-doped LGSO scintillators with different decay times coupled to Si-PMs and digitized the output signals using a high bandwidth digital oscilloscope. We prepared three types of LGSOs (LGSO-fast, LGSO-standard, and LGSO-slow) with different Ce concentrations. After measuring the decay time, the energy performance, and the timing performance of each LGSO, we conducted pulse shape analysis and timing resolution measurements for two versions of phoswich LGSOs: LGSO-standard/LGSO-fast and LGSO-slow/LGSO-fast combinations. The pulse shape spectra for a 10-mm-long crystal LGSO-slow/LGSO-fast combination showed good separation of the front and back crystals with a peak-to-valley ratio of 2.0. The timing resolutions for the 20-mm-long crystal LGSO-slow/LGSO-fast combination were ~300 ps FWHM. The timing resolutions for the phoswich LGSOs were slightly inferior than that measured with the individual LGSO fast, but the acquired timing resolution for the phoswich configuration, ~300 ps with a LGSO-slow/LGSO-fast combination, is adequate for TOF-PET systems. We conclude that LGSO phoswich detectors are promising for TOF-DOI-PET systems.

  15. Viscous Fingering and Dendritic Growth of Surface Crystallized Sr2TiSi2O8 Fresnoite

    PubMed Central

    Wisniewski, Wolfgang; Patschger, Marek; Rüssel, Christian

    2013-01-01

    During the quenching of a melt with the composition 2SrO·TiO2·2.75SiO2, cubic SrTiO3- and tetragonal Sr2TiSi2O8-crystals are formed at the surface. Subsequent crystal growth leads to dendritic fresnoite structures which become increasingly finer until the mechanism changes to viscous fingering during further cooling. In the final stages of this initial growth step, the crystal orientations of these dendrites systematically change. Due to a complete absence of bulk nucleation in this system, crystal growth is resumed upon reheating to 970°C and fractal growth with the c-axis tilted by about 45° from the main growth direction is observed. The results are interpreted to confirm the link between viscous fingering and dendritic growth in the case of a true crystallization process. PMID:24356207

  16. In situ synthesis and hydrothermal crystallization of nanoanatase TiO2 -SiO2 coating on aramid fabric (HTiSiAF) for UV protection.

    PubMed

    Deng, Hui; Zhang, Hongda

    2015-10-01

    TiO2 -SiO2 thin film was prepared by sol-gel method and coated on the aramid fabric to prepare functional textiles. The aramid fabric was dipped and withdrawn in TiO2 -SiO2 gel and hydrothermal crystallization at 80(°) C, then its UV protection functionality was evaluated. The crystalline phase and the surface morphology of TiO2 -SiO2 thin film were characterized using SEM, XRD, and AFM respectively. SEM showed hydrothermal crystallization led to a homogeneous dispersion of anatase nonocrystal in TiO2 -SiO2 film, and XRD suggested the mean particle size of the formed anatase TiO2 was less than 30 nm. AFM indicated that hydrothermal treatment enhanced the crystallization of TiO2 . UV protection analysis suggested that the hydrothermally treated coated textile had a better screening property in comparison with TiO2 -SiO2 gel and native aramid fabric.

  17. Optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres.

    PubMed

    Oh, Yong Taeg; Choi, Bum Ho; Shin, Dong Chan

    2012-02-01

    The optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres structures were studied. Colloidal crystal film of SiO2 microspheres were self-assembled by evaporation using SiO2 in solution at a constant 0.1 wt%. ZnO in thin films was then electrochemically deposited on to colloidal crystal film of SiO2 microspheres. During electrochemical deposition, the content of Zn(NO3)2 x 6H2O in solution was 5 wt%, and the process's conditions were varied between of 2-4 V and 30-120 s at room temperature, with subsequent heat-treatment between 200 and 400 degrees C. A smooth surface and uniform thickness of 1.8 microm were obtained at 3 V for 90 s. The highest PL peak intensity was obtained in the ZnO thin film heat-treated at 400 degrees C. The double layered ZnO/SiO2 colloidal crystals showed clearly better emission properties than the SiO2/ZnO and ZnO structures.

  18. Simultaneous presence of (Si{sub 3}O{sub 10}){sup 8−} and (Si{sub 2}O{sub 7}){sup 6−} groups in new synthetic mixed sorosilicates: BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) and isotypic compounds, studied by single-crystal X-ray diffraction, Raman spectroscopy and DFT calculations

    SciTech Connect

    Wierzbicka-Wieczorek, Maria; Többens, Daniel M.; Kolitsch, Uwe; Tillmanns, Ekkehart

    2013-11-15

    Three new, isotypic silicate compounds, BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}), SrYb{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) and SrSc{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}), were synthesized using high-temperature flux growth techniques, and their crystal structures were solved from single-crystal X-ray intensity data: monoclinic, P2{sub 1}/m, with a=5.532(1)/5.469(1)/5.278(1), b=19.734(4)/19.447(4)/19.221(4), c=6.868(1)/6.785(1)/6.562(1) Å, β=106.53(3)/106.20(3)/106.50(3)°, V=718.8(2)/693.0(2)/638.3(2) Å{sup 3}, R(F)=0.0225/0.0204/0.0270, respectively. The topology of the novel structure type contains isolated horseshoe-shaped Si{sub 3}O{sub 10} groups (Si–Si–Si=93.15–95.98°), Si{sub 2}O{sub 7} groups (Si–O{sub bridge}–Si=180°, symmetry-restricted) and edge-sharing M(1)O{sub 6} and M(2)O{sub 6} octahedra. Single-crystal Raman spectra of the title compounds were measured and compared with Raman spectroscopic data of chemically and topologically related disilicates and trisilicates, including BaY{sub 2}(Si{sub 3}O{sub 10}) and SrY{sub 2}(Si{sub 3}O{sub 10}). The band assignments are supported by additional theoretical calculation of Raman vibrations by DFT methods. - Graphical abstract: View of BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) along [100], showing zigzag chains and the tri- and disilicate groups. The unit cell is outlined. Display Omitted - Highlights: • We report a novel interesting crystal structure type for mixed sorosilicates containing Y, Yb, and Sc. • Synthesis of such mixed sorosilicates is possible by a high-temperature flux-growth technique. • Calculation of Raman vibrations by advanced DFT methods allows a considerably improved interpretation of measured Raman spectra.

  19. Film/substrate registry as measured by anomalous x-ray scattering at a reacted, epitaxial Cu/Si(111) interface

    NASA Astrophysics Data System (ADS)

    Walker, F. J.; Specht, E. D.; McKee, R. A.

    1991-11-01

    We used anomalous x-ray-diffraction methods to measure the contribution of an epitaxial copper overlayer on silicon to the crystal truncation rods (CTR's). The intensities of the CTR's are analyzed to determine interface structure; the epitaxy of a large-misfit system, Cu on Si(111), can be described in relationship to this structure. Anomalous scattering observed at the Cu K edge along a Si CTR demonstrates copper atoms to be in registry with the Si(111) surface. The copper-atom registry at the interface can be modeled based on the known bulk η-Cu3Si structure and observed epitaxy.

  20. Density functional theory study of stable configurations of substitutional and interstitial C and Sn atoms in Si and Ge crystals

    NASA Astrophysics Data System (ADS)

    Koyama, Hiroki; Sueoka, Koji

    2017-04-01

    Group IV semiconductor compounds, e.g., Si and Ge containing substitutional C (Cs) and/or Sn (Sns) atoms (mono-doping and co-doping) with contents of several % are attracting attention for application to solar cells because they are good for the environment and have an affinity with Si materials. In this study, we evaluate the stable configurations of C and/or Sn atoms in Si (Ge) crystals with a focus on the formation of interstitial C (Ci) atoms by means of density functional theory calculations. The Hakoniwa method proposed by Kamiyama et al. (2016) is applied to a 64-atom supercell to obtain the thermal equilibrium ratio of Ci to the total C atoms. The results of the analysis are fourfold. First, the isolated Cs atom is stabler than the isolated Ci atom in both Si and Ge crystals, and it is stabler in Si than in Ge. The isolated Sns atom is much stabler that Sni as well, but it is stabler in Ge than Si. Second, a Ci atom is formed in a [0 0 1] oriented Ci-Cs pair in Ge crystals with the ratio of 7.7% to total C atoms at 450 °C when the concentration of uniformly distributed C atoms is about 3%. Third, the difference of the formation energy of Ci and Cs in Si decreases to about 0.3 eV with an increase in the concentration of uniformly distributed C atoms up to 6%. Fourth, the co-doping of C and Sn suppresses the formation of Ci atoms in Si and Ge crystals. The results obtained here are useful for the prediction of possible atomic configurations of C and/or Sn in Si and Ge for solar cell application.

  1. Ice crystal and ice nucleus measurements in cap clouds

    NASA Technical Reports Server (NTRS)

    Vali, G.; Rogers, D. C.; Deshler, T. L.

    1982-01-01

    Ice nucleation in cap clouds over a mountain in Wyoming was examined with airborne instrumentation. Crosswind and wind parallel passes were made through the clouds, with data being taken on the ice crystal concentrations and sizes. A total of 141 penetrations of 26 separate days in temperatures ranging from -7 to -24 C were performed. Subsequent measurements were also made 100 km away from the mountain. The ice crystal concentrations measured showed good correlation with the ice nucleus content in winter time, midcontinental air masses in Wyoming. Further studies are recommended to determine if the variations in the ice nucleus population are the cause of the variability if ice crystal content.

  2. Synthesis, electronic transport and optical properties of Si:α-Fe 2 O 3 single crystals

    SciTech Connect

    Rettie, Alexander J. E.; Chemelewski, William D.; Wygant, Bryan R.; Lindemuth, Jeffrey; Lin, Jung-Fu; Eisenberg, David; Brauer, Carolyn S.; Johnson, Timothy J.; Beiswenger, Toya N.; Ash, Richard D.; Li, Xiang; Zhou, Jianshi; Mullins, C. Buddie

    2016-01-01

    We report the synthesis of silicon-doped hematite (Si:α-Fe2O3) single crystals via chemical vapor transport, with Si incorporation on the order of 1019 cm-3. The conductivity, Seebeck and Hall effect were measured in the basal plane between 200 and 400 K. Distinct differences in electron transport were observed above and below the magnetic transition temperature of hematite at ~265 K (the Morin transition, TM). Above 265 K, transport was found to agree with the adia-batic small-polaron model, the conductivity was characterized by an activation energy of ~100 meV and the Hall effect was dominated by the weak ferromagnetism of the material. A room temperature electron drift mobility of ~10-2 cm2 V-1 s-1 was estimated. Below TM, the activation energy increased to ~160 meV and a conventional Hall coefficient could be de-termined. In this regime, the Hall coefficient was negative and the corresponding Hall mobility was temperature-independent with a value of ~10-1 cm2 V-1 s-1. Seebeck coefficient measurements indicated that the silicon donors were fully ionized in the temperature range studied. Finally, in the doped species we observe a very broad infrared absorption fea-ture centered near 0.4 eV that does not appear to be hydroxyl related but is tentatively assigned to photon-assisted small-polaron hops. These results are discussed in the context of existing hematite transport studies.

  3. Crystal structure of coesite, a high-pressure form of SiO/sub 2/, at 15 and 298 K from single-crystal neutron and x-ray diffraction data: test of bonding models

    SciTech Connect

    Smyth, J.R.; Smith, J.V.; Artioli, G.; Kvick, A.

    1987-02-12

    The crystal structure of a natural coesite from an eclogite rock fragment in the Roberts Victor kimberlite, South Africa, was determined at 15 K by neutron diffraction (a = 7.1357 (13) A, b = 12.3835 (26) A, c = 7.1859 (11) A, ..beta.. = 120.375 (16)/sup 0/, C2/c), and at approx.298 K by X-ray diffraction. Cell dimensions measured by neutron diffraction at 292 K (7.1464 (9), 12.3796 (19), and 7.1829 (8) A, 120.283 (9)/sup 0/) differed from those determined by X-ray diffraction, probably because of a systematic absorption error for the latter. The strongly anisotropic nature of the thermal expansion is explained qualitatively by the relatively large changes (approx.1%) in the distances between the nonbonded oxygen neighbors and the relatively small changes of Si-O-Si and O-Si-O angles in the compact three-dimensional framework. There is a good, but not perfect, negative correlation between the eight independent Si-O distances and the five independent values for sec theta(Si-O-Si) at 15 K. It is weaker than that for 298 K, and the scatter from a straight-line prediction from molecular-orbital models for small clusters (e.g., H/sub 6/Si/sub 2/O/sub 7/) implies that it is desirably to consider additional forces, including repulsive forces between nonbonded oxygen neighbors. The combined at a for Si-O and Si-O-Si in coesite, quartz, and cristobalite at 10-15 K show less scatter than those for approx.298 K, in accordance with the greater thermal response of framework geometry in the more open structures.

  4. Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)

    NASA Astrophysics Data System (ADS)

    Jannesary, Reyhaneh; Bergmair, Iris; Zamiri, Saeid; Hingerl, Kurt; Hubbard, Graham; Abbott, Steven; Chen, Qin; Allsopp, Duncan

    2009-05-01

    The quest for mass replication has established technologies like nanoimprinting via hard stamps or PDMS stamps, where the stamps are usually produced via Electron Beam Lithography (EBL) for applications in the microelectronic industry. On the other hand, nanopatterning with self ordered structures1 or via holographic patterns provide the basis for large area imprints for applications for example, antireflection coatings based on biomimetic motheyes2. In this work we report on a technology for enabling the mass replication of custom-designed and e-beam lithographically prepared structures via establishing novel roll to roll nanoimprint processes for pattern transfer into UV curable pre-polymers. The new nano-fabrication technology is based on the concept of Disposal Master Technology (DMT) capable of patterning areas up to 1 x 1 m2 and is suitable for mass volume manufacturing of large area arrays of sub-wavelength photonic elements. As an example to show the potential of the application of the new nanoimprint technologies, we choose the fabrication of a photonic crystal (PhC) structure with integrated light coupling devices for low loss interconnection between PhC lightwave circuits and optical fibre systems. We present two methods for fabrication of nanoimprint lithography stamps in Si substrate. In the first method optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and then the pattern transfer into Si using reacting ion etching (RIE) with SF6 as etch gas. In the first method, we use 200nm of positive resist PMMA 950K for EBL exposure. In this method, resist thickness, exposure dose, development time and parameter for etching have been optimized and a photonic crystal of Si-rods in air was fabricated. In the second method lift-off has not been performed and metal mask has been used as master. The subsequent steps for fabricating the master will be presented in detail.

  5. Critical behavior of the single-crystal helimagnet MnSi

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Menzel, Dirk; Jin, Chiming; Du, Haifeng; Ge, Min; Zhang, Changjin; Pi, Li; Tian, Mingliang; Zhang, Yuheng

    2015-01-01

    The critical behavior of the single-crystal helimagnet MnSi is investigated by means of bulk dc magnetization at the boundary between the conical state and paramagnetic phase. We obtain the critical exponents (β =0.242 ±0.006 ,γ =0.915 ±0.003 , and δ =4.734 ±0.006 ), where the self-consistency and reliability are verified by the Widom scaling law and the scaling equation. The critical exponents of MnSi belong to the universality class of tricritical mean-field theory, which unambiguously indicates a tricritical phenomenon at the boundary between the first-order phase transition and the second-order one induced by the external magnetic field. The tricritical point (TCP) is determined as HTCP≈3200 Oe at the critical temperature, consistent with the previous report [A. Bauer, M. Garst, and C. Pfleiderer, Phys. Rev. Lett. 110, 177207 (2013), 10.1103/PhysRevLett.110.177207]. The critical behavior suggests a long-range magnetic coupling with the exchange distance decaying as J (r ) ≈r-4.3 in MnSi.

  6. History dependence of the magnetic properties of single-crystal Fe1 -xCoxSi

    NASA Astrophysics Data System (ADS)

    Bauer, A.; Garst, M.; Pfleiderer, C.

    2016-06-01

    We report the magnetization, ac susceptibility, and specific heat of optically float-zoned single crystals of Fe1 -xCoxSi , 0.20 ≤x ≤0.50 . We determine the magnetic phase diagrams for all major crystallographic directions and cooling histories. After zero-field cooling, the phase diagrams resemble that of the archetypal stoichiometric cubic chiral magnet MnSi. Besides the helical and conical state, we observe a pocket of skyrmion lattice phase just below the helimagnetic ordering temperature. At the phase boundaries between these states evidence for slow dynamics is observed. When the sample is cooled in small magnetic fields, the phase pocket of skyrmion lattice may persist metastably down to the lowest temperatures. Taken together with the large variation in the transition temperatures, transition fields, and helix wavelength as a function of the composition, this hysteresis identifies Fe1 -xCoxSi as an ideal material for future experiments exploring, for instance, the topological unwinding of the skyrmion lattice.

  7. Slow-light Mach–Zehnder modulators based on Si photonic crystals

    PubMed Central

    Baba, Toshihiko; Nguyen, Hong C; Yazawa, Naoya; Terada, Yosuke; Hashimoto, Satoshi; Watanabe, Tomohiko

    2014-01-01

    Mach–Zehnder optical modulators are the key devices for high-speed electrical-to-optical conversion in Si photonics. Si rib waveguides with a p–n diode structure operated in the carrier depletion mode have mainly been developed as their phase shifters. Their length is usually longer than millimeters due to the limited change in the refractive index due to the carrier depletion in a Si p–n diode. This length is shorter than commercial LiNbO3 modulators, but still much shorter devices are desired for large-scale integration and for simplifying the high-speed RF modulation. A promising solution is to use slow light in photonic crystal waveguides, which enhances the modulation efficiency in proportion to the group-velocity refractive index ng. In particular, dispersion-engineered slow light allows more than five-fold enhancement, maintaining a wide working spectrum as well as large temperature tolerance. The devices with a phase shifter length of around 100 μm are fabricated by a standard process compatible with complementary metal-oxide semiconductors. The operation at 10 Gbps and higher speeds are obtained in the wavelength range of 16.9 nm and temperature range of 105 K. PMID:27877658

  8. Performance comparison between ceramic Ce:GAGG and single crystal Ce:GAGG with digital-SiPM

    NASA Astrophysics Data System (ADS)

    Park, C.; Kim, C.; Kim, J.; Lee, Y.; Na, Y.; Lee, K.; Yeom, J. Y.

    2017-01-01

    The Gd3Al2Ga3O12 (Ce:GAGG) is a new inorganic scintillator known for its attractive properties such as high light yield, stopping power and relatively fast decay time. In this study, we fabricated a ceramic Ce:GAGG scintillator as a cost-effective alternative to single crystal Ce:GAGG and, for the first time, investigated their performances when coupled to the digital silicon photomultiplier (dSiPM)—a new type of photosensor designed for applications in medical imaging, high energy and astrophysics. Compared to 3 × 3 × 2 mm3 sized single crystal Ce:GAGG, the translucent ceramic Ce:GAGG, which has a much lower transmittance than the single crystal, was determined to give an output signal amplitude that is approximately 61% of single crystal Ce:GAGG. The energy resolution of the 511 keV annihilation peak of a 22Na source was measured to be 9.9 ± 0.2% and 13.0 ± 0.3% for the single and ceramic scintillators respectively. On the other hand, the coincidence resolving time (CRT) of ceramic Ce:GAGG was 307 ± 23 ps, better than the 465 ± 37 ps acquired with single crystals—probably attributed to its slightly faster decay time and higher proportion of the fast decay component. The ceramic Ce:GAGG may be a promising cost-effective candidate for applications that do not require thick scintillators such as x-ray detectors and charged particle detectors, and those that require time-of-flight capabilities.

  9. Crystal structure and anisotropic magnetic properties of new ferromagnetic Kondo lattice compound Ce(Cu,Al,Si)2

    NASA Astrophysics Data System (ADS)

    Maurya, A.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Pani, M.; Costa, G. A.

    2017-03-01

    Single crystals of the new compound CeCu0.18Al0.24Si1.58 have been grown by high-temperature solution growth method using a eutectic Al-Si mixture as flux. This compound is derived from the binary CeSi2 (tetragonal α-ThSi2-type, Pearson symbol tI12, space group I41/amd) obtained by partial substitution of Si by Cu and Al atoms but showing full occupation of the Si crystal site (8e). While CeSi2 is a well-known valence-fluctuating paramagnetic compound, the CeCu0.18Al0.24Si1.58 phase orders ferromagnetically at TC=9.3 K. At low temperatures the easy-axis of magnetization is along the a-axis, which re-orients itself along the c-axis above 30 K. The presence of hysteresis in the magnetization curve, negative temperature coefficient of resistivity at high temperatures, reduced jump in the heat capacity and a relatively lower entropy released up to the ordering temperature, and enhanced Sommerfeld coefficient (≈100 mJ/mol K2) show that CeCu0.18Al0.24Si1.58 is a Kondo lattice ferromagnetic, moderate heavy fermion compound. Analysis of the high temperature heat capacity data in the paramagnetic region lets us infer that the crystal electric field split doublet levels are located at 178 and 357 K, respectively, and Kondo temperature (8.4 K) is of the order of TC in CeCu0.18Al0.24Si1.58.

  10. Li{sub 2}Si{sub 3}O{sub 7}: Crystal structure and Raman spectroscopy

    SciTech Connect

    Krueger, Hannes Kahlenberg, Volker; Kaindl, Reinhard

    2007-03-15

    The crystal structure of metastable Li{sub 2}Si{sub 3}O{sub 7} was determined from single crystal X-ray diffraction data. The orthorhombic crystals were found to adopt space group Pmca with unit cell parameters of a=19.648(3)A, b=5.9969(8)A and c=4.8691(6)A. The content of the cell is Z=4. The obtained structural model was refined to a R-value of 0.035. The structure exhibits silicate sheets, which can be classified as {l_brace}uB,2,1{sub {approx}}{sup 2}{r_brace}[Si{sub 6}O{sub 14}] using the silicate nomenclature of Liebau. The layers are build up from zweier single chains running parallel to c. Raman spectra are presented and compared with other silicates. Furthermore, the structure is discussed versus Na{sub 2}Si{sub 3}O{sub 7}.

  11. High-performance poly-Si thin film transistors with highly biaxially oriented poly-Si thin films using double line beam continuous-wave laser lateral crystallization

    NASA Astrophysics Data System (ADS)

    Yamano, Masayuki; Kuroki, Shin-Ichiro; Sato, Tadashi; Kotani, Koji

    2014-01-01

    Highly biaxially oriented poly-Si thin films were formed by double-line beam continuous-wave laser lateral crystallization (DLB-CLC). The crystallinities of the DLB-CLC poly-Si thin films were (110), (111), and (211) for the laser scan, transverse, and surface directions, respectively, and an energetically stable Σ3 grain boundary was observed to be dominant. All silicon grains were elongated in the laser scan direction and one-dimensionally very large silicon grains with lengths of more than 100 µm were fabricated. Using these biaxially oriented polycrystalline silicon (poly-Si) films, low-temperature poly-Si TFTs (LTPS-TFTs) were fabricated at low temperatures (≦550 °C) by a metal gate self-aligned process. As a result, a TFT with a high electron field effect mobility of μFE = 450 cm2 V-1 s-1 in a linear region was realized.

  12. Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal

    NASA Astrophysics Data System (ADS)

    Zuev, V. V.; Grigoriev, S. N.; Romanov, R. I.; Fominski, V. Y.; Volosova, M. A.; Demin, M. V.

    2016-09-01

    Amorphous WOx films were prepared on the SiC crystal by using two different methods, namely, reactive pulsed laser deposition (RPLD) and reactive deposition by ion sputtering (RDIS). After deposition, the WOx films were annealed in an air. The RISD film possessed a m-WO3 structure and consisted of closely packed microcrystals. Localized swelling of the films and micro-hills growth did not destroy dense crystal packing. RPLD film had layered β-WO3 structure with relatively smooth surface. Smoothness of the films were destroyed by localized swelling and the micro-openings formation was observed. Comparative study of m-WO3/SiC, Pt/m-WO3/SiC, and P-WO3/SiC samples shows that structural characteristics of the WO3 films strongly influence on the voltage/current response as well as on the rate of current growth during H2 detection at elevated temperatures.

  13. Comparison of modeled and measured performance of a GSO crystal as gamma detector

    SciTech Connect

    Parno, Diana Syemour; Friend, Megan Lynn; Mamyan, Vahe; Benmokhtar, Fatiha; Camsonne, Alexandre; Franklin, Gregg B.; Paschke, Kent D.; Quinn, Brian Patrick

    2013-11-01

    We have modeled, tested, and installed a large, cerium-activated Gd{sub 2}SiO{sub 5} crystal scintillator for use as a detector of gamma rays. We present the measured detector response to two types of incident photons: nearly monochromatic photons up to 40 MeV, and photons from a continuous Compton backscattering spectrum up to 200 MeV. Our GEANT4 simulations, developed to determine the analyzing power of the Compton polarimeter in Hall A of Jefferson Lab, reproduce the measured spectra well.

  14. Growth and characterization of the La3Ga4.85Fe0.15SiO14 piezoelectric single crystal

    NASA Astrophysics Data System (ADS)

    Dou, Renqin; Liu, Wenpeng; Zhang, Qi; Zhang, Qingli; Ding, Shoujun; Shi, Zibin; Sun, Dunlu; Wang, Jiyang

    2017-01-01

    A new piezoelectric single crystal La3Ga4.85Fe0.15SiO14 (LGFS) was grown by the Czochralski method firstly. Its structural parameters were obtained by Rietveld refinement to the X-ray diffraction. The effective segregation coefficient k eff of Fe in the LGFS was determined to be 0.6. The cost of LGFS is reduced due to the doping of cheap Fe. The crystal density was measured to be 5.7 g cm-3 by the buoyancy method. The defect structure of LGFS crystal was investigated by the chemical etching with 85% H2SO4 etchant. Dislocation etching pit patterns of LGFS crystal are consistent with the corresponding atomic arrangement schematics. Compared with LGS, LGN, LGT, and LGAS crystal, the LGFS crystal exhibits outstanding dielectric and piezoelectric properties, and ɛ 11, ɛ 33, d 11, and d 14 are 20.86, 51.99, 6.5 pC/N, and -5.10 pC/N, respectively. Therefore, LGFS may be a new potential piezoelectric crystal with high performance and low expense.

  15. The measurement of droplet temperature using thermochromic liquid crystals

    SciTech Connect

    Peterson, D.; Hu, S.H.; Richards, C.D.; Richards, R.F.

    1995-12-31

    A noninvasive technique to determine the temperature of droplets in flight is under development. The technique involves atomizing droplets of neat thermochromic liquid crystals and then inferring the droplet temperatures form the liquid crystals` color-play. Previous work has shown the feasibility of atomizing the neat liquid crystal. The present work reports results of a calibration of the temperature response of 200 to 300 micron droplets of neat liquid crystal. The calibration is accomplished by suspending droplets of the neat liquid crystal on a microthermocouple within a controlled temperature environment. The droplet is imaged using a long-distance microscope, an RGB video camera, and a frame grabber. Images of the droplet are acquired and digitized to quantify changes in RGB values (color) with temperature. The RGB information is transformed into hue, saturation, intensity (HSI) space to relate hue, H, to temperature. The temperature of the droplet is measured directly with the micro-thermocouple.

  16. Effect of electrolytical hydrogenation on the thermal stability and crystallization kinetics of metallic glass Fe79Si9B12

    NASA Astrophysics Data System (ADS)

    Górecki, Cz; Górecki, T.

    2011-04-01

    The effect of electrolytical hydrogenation on both the surface and volume crystallization kinetics and thermal stability of amorphous alloy Fe79Si9B12 has been investigated. The parameters of the surface and volume crystallization (temperature, activation energy) have been determined applying the exoelectron emission (EEE) and differential thermal analysis (DTA) methods, respectively. It has been found that the surface crystallization of investigated material occurs at temperature much lower and with activation energy smaller than the volume crystallization. The determination of the activation energies for the volume and surface crystallization by the combination of DTA and EEE techniques enables the determination of activation energies for both the nucleation and growth of the crystalline phase in metallic glasses and other amorphous materials. Hydrogenation of the investigated metallic glass reduces its thermal stability, what is manifested by an decrease in the activation energies for both the surface and volume crystallization.

  17. Dynamic and static measurements on epitaxial Fe/Si/Fe

    NASA Astrophysics Data System (ADS)

    Kuanr, Bijoy K.; Buchmeier, M.; Buergler, D. E.; Gruenberg, P.; Camley, R.; Celinski, Z.

    2003-07-01

    Strong antiferromagnetic interlayer exchange coupling across an insulating spacer is in increasing demand for high-density magnetic recording. We report here on the interlayer exchange coupling of epitaxial Fe(8 nm)/Si(t)/Fe(10 nm) trilayers as a function of Si thickness studied by ferromagnetic resonance (FMR), Brillouin light scattering, and magneto optic Kerr effect (MOKE) measurement techniques. A very strong antiferromagnetic (AFM) interlayer exchange coupling (>6 erg/cm2) was observed at a spacer Si thickness of 0.7 nm. The bilinear J1 and biquadratic J2 coupling constants were determined from (i) the fitting of the angular variation of the resonance field (Hres) in FMR experiments, (ii) the field variation of the frequencies of the Damon-Eshbach surface modes (both optic and acoustic) in BLS measurements, and (iii) the fitting of longitudinal MOKE hysteresis loops. We obtain a higher Hres along the easy axis than along the hard axis and the magnetizations of the two Fe films are canted. The eightfold-like symmetry of Hres as a function of the angle observed at room temperature is due to the competition between the Fe fourfold anisotropy and AFM interfacial coupling energy. This behavior vanishes at low temperatures due to a strong increase of AFM coupling (especially J2) in comparison to fourfold in-plane anisotropy. From the fitting of the temperature dependent FMR data, we obtain the temperature variation of the bilinear and biquadratic exchange coupling constants. We distinguish the existence of canted magnetization states at resonance by fitting the experimental Hres versus θH data to the model calculation.

  18. Synthesis of silver nanoparticles by chemical reduction method and its metal induced crystallization of poly-Si thin film application

    NASA Astrophysics Data System (ADS)

    Huang, Jung-Jie; Lin, Che-Chun; Wuu, Dong-Sing

    2014-12-01

    Metal induced crystallization (MIC) can be generated by using a silver nanoparticles (AgNPs) solution spin coated on amorphous silicon (a-Si) film, and annealing the sample in a furnace under vacuum. Because nanoscale metal has a large specific surface area, its catalytic effect is enhanced, resulting in a low processing temperature. Thus, a poly-Si thin film with a high crystalline fraction can be obtained by using AgNPs induced crystallization. In this study, the size and annealing time of AgNPs are discussed. According to the results, the grain size of the poly-Si thin film produced using AgNPs induced crystallization was more uniform than that of the film obtained by employing traditional thermally evaporated Ag induced crystallization. Smaller AgNPs size and long annealing time enhance the crystallization of poly-Si thin film. Applying an annealing temperature of 550 °C for 480 min with 10 nm of AgNPs yielded a crystalline fraction of 75%.

  19. Profile measurement taken with liquid-crystal gratings.

    PubMed

    Kakunai, S; Sakamoto, T; Iwata, K

    1999-05-01

    Profile measurement taken with liquid-crystal gratings and a phase-shifting technique is proposed, and its effectiveness is verified by experiment. The surface profile is obtained by measurement of the phase distributions of the sinusoidal gratings deformed by an object's surface. The liquid-crystal grating gives an accurate phase shift, an arbitrary projection pitch, and a constant surface brightness compared with conventional gratings such as a laser interference fringe grating and a Ronchi grating. Therefore a flexible measuring system may be developed with it. Two gratings with different pitches are used to measure an object with large steps. A two-color projection system can be used to produce such gratings simultaneously. Locally varying reflectivity on a surface can also be compensated by adjustment of the color component of the projected grating with a liquid-crystal grating. Thus the contrast in the projected grating can be made uniform, and a good profile measurement can be accomplished.

  20. Measurement & Minimization of Mount Induced Strain on Double Crystal Monochromator Crystals

    NASA Astrophysics Data System (ADS)

    Kelly, J.; Alcock, S. G.

    2013-03-01

    Opto-mechanical mounts can cause significant distortions to monochromator crystals and mirrors if not designed or implemented carefully. A slope measuring profiler, the Diamond-NOM [1], was used to measure the change in tangential slope as a function of crystal clamping configuration and load. A three point mount was found to exhibit the lowest surface distortion (< 2μrad peak-to-valley) over the whole length of the monochromator 2nd crystal. A thermal circuit, comprising the liquid nitrogen manifold to the crystal, was modelled using experimental data for the 2nd crystal absorbed beam power and braid link thermal conductance. In the case of the I09 monochromator 2nd crystal assembly, the temperature drop across the 3 indium mount pads was calculated to be 25% of the total 0.22 K. Less than 1% loss of flux due to the 2nd crystal strain is expected at 25keV. This three pad mount will be used in the monochromators on the I09 and I23 beamlines at Diamond Light Source.

  1. Positron lifetime measurements in chiral nematic liquid crystals

    NASA Technical Reports Server (NTRS)

    Singh, Jag J.; Eftekhari, Abe; Parmar, Devendra S.

    1991-01-01

    Positron lifetimes in the isotropic phases of chiral nematic liquid crystal formulations and their mixtures up to the racemic level were measured. The lifetime spectra for all liquid crystal systems were analyzed into three components. Although the individual spectra in the left- and right-handed components are identical, their racemic mixtures exhibit much larger orthopositronium lifetimes; these larger lifetimes indicate the presence of larger microvoids. This result is consistent with the reportedly higher thermodynamic stability and color play range in the racemic mixtures of chiral nematic liquid crystals.

  2. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films

    PubMed Central

    Zhou, H. P.; Xu, M.; Xu, S.; Liu, L. L.; Liu, C. X.; Kwek, L. C.; Xu, L. X.

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  3. Improvement of the growth of Li4SiO4 single crystals for neutron detection and their scintillation and luminescence properties

    NASA Astrophysics Data System (ADS)

    Pejchal, Jan; Babin, Vladimir; Beitlerova, Alena; Kurosawa, Shunsuke; Yokota, Yuui; Yoshikawa, Akira; Nikl, Martin

    2017-01-01

    We have investigated Li4SiO4 scintillation crystals for their possible application in neutron detection due to high Li content and low density of 2.35 g/cm3. The micro-pulling-down method employing the Ir crucible and afterheater was optimized for crystal growth of Li4SiO4 taking into account the Li evaporation. To grow high-quality crack-free single crystals, the heating power was increased to establish milder temperature gradient, thicker meniscus, smaller crystal diameter and resulting smaller stress in the as-grown crystals. The undoped, Ti-, Cr-, and Al- doped crystals were prepared and studied. Radioluminescence measurements under X-ray excitation showed quite high overall scintillation efficiency of the Ti-doped sample reaching as high as 250% of that of Bi4Ge3O12 reference scintillator. The emission spectrum was dominated by one broad band peaking at 350 nm related to Ti4+ impurity. Reasonable light yield of 10000 photons/neutron was found. However, its long decay time of 54 μs might be a limitation especially for high counting rate applications. The overall scintillation efficiency of the Cr3+ sample was much lower and the spectrum shows one broad peak at 463 nm which does not correspond to Cr3+ luminescence. The radioluminescence spectrum of the Al-doped sample resembled to that of the Ti-doped one, just its magnitude is considerably lower, which was explained by Ti contamination. Peculiarities and optimization of crystal growth and a preliminary sketch of luminescence mechanisms and dopant incorporation are discussed.

  4. The Avogadro constant: determining the number of atoms in a single-crystal ²⁸Si sphere.

    PubMed

    Becker, Peter; Bettin, Horst

    2011-10-28

    The Avogadro constant, the number of entities in an amount of substance of one mole, links the atomic and the macroscopic properties of matter. Since the molar Planck constant--the product of the Planck constant and the Avogadro constant--is very well known via the measurement of the Rydberg constant, the Avogadro constant is also closely related to the Planck constant. In addition, its accurate determination is of paramount importance for a new definition of the kilogram in terms of a fundamental constant. Here, we describe a new and unique approach to determine the Avogadro constant from the number of atoms in 1 kg single-crystal spheres that are highly enriched with the (28)Si isotope. This approach has enabled us to apply isotope dilution mass spectroscopy to determine the molar mass of the silicon crystal with unprecedented accuracy. The value obtained, N(A)=6.022 140 82(18)×10(23) mol(-1), is now the most accurate input datum for a new definition of the kilogram.

  5. Oxidation and microstructure evolution of Al-Si coated Ni3Al based single crystal superalloy with high Mo content

    NASA Astrophysics Data System (ADS)

    Tu, Xiaolu; Peng, Hui; Zheng, Lei; Qi, Wenyan; He, Jian; Guo, Hongbo; Gong, Shengkai

    2015-01-01

    A Si modified aluminide (Al-Si) coating was prepared on a Ni3Al based single crystal superalloy with high Mo content by high-activity pack cementation. Cyclic oxidation test at 1150 °C was carried out and the microstructure evolution of the coating was investigated. The results show that the oxidation resistance of the substrate was greatly increased by applying an Al-Si coating. During oxidation, outward diffusion of Mo was effectively blocked due to its high affinity with Si. Besides, a layered structure was formed as a result of the elements inter-diffusion. An obvious degradation of the Al-Si coating was observed after 100 h oxidation. Possible mechanisms related to the oxidation and elements inter-diffusion behaviours were also discussed.

  6. Prediction method of basic domain structure in Fe3%Si(110) single crystal with grooved surface

    NASA Astrophysics Data System (ADS)

    Iwata, K.; Fujikura, M.; Arai, S.; Ishiyama, K.

    2014-05-01

    This paper proposes the method to accurately predict the 180° basic domain width (Dw) in demagnetized states of the grooved Fe3%Si(110) single crystal with the tilt angle of [001] out of the sheet surface (β). The evaluation of Dw enables the estimation of the anomalous eddy current losses. In this paper, Dw is optimized to minimize the magnetic Gibbs free energy represented by vector potentials using the finite element method and the conjugate gradient method. The μ*-method is adopted to approximate the magnetization relaxation. The stray field energy generated by the magnetic charges occurring on both grooves cross section and sheet surfaces is considered in our proposed method. The validity of the proposed method was confirmed by comparison with the observed Dw. As a result, we could reveal the β dependence of Dw against the groove depth. Moreover, the theoretical threshold of the domain refinement due to the grooves has been suggested.

  7. Room-temperature ferromagnetism in Cu-implanted 6H-SiC single crystal

    NASA Astrophysics Data System (ADS)

    Zheng, H. W.; Yan, Y. L.; Lv, Z. C.; Yang, S. W.; Li, X. G.; Liu, J. D.; Ye, B. J.; Peng, C. X.; Diao, C. L.; Zhang, W. F.

    2013-04-01

    200 keV Cu+ ions were implanted into 6H-SiC single crystal at room temperature with fluence of 8 × 1015 cm-2. No ferromagnetism (FM)-related secondary phase was found by the results of high-resolution x-ray diffraction and x-ray photoelectron spectroscopy. Positron annihilation lifetime spectroscopy results indicated that the main defect type was silicon vacancy and the concentration of it increased after Cu implantation. The room-temperature ferromagnetism was detected by superconducting quantum interference device. First-principles calculations revealed that the magnetic moments mainly come from the 2p orbitals of C atoms and 3d orbitals of Cu dopant. The origin of the FM has been discussed in detail.

  8. Crystal structures of (Mg1-x,Fe(x))SiO3 postperovskite at high pressures.

    PubMed

    Yamanaka, Takamitsu; Hirose, Kei; Mao, Wendy L; Meng, Yue; Ganesh, P; Shulenburger, Luke; Shen, Guoyin; Hemley, Russell J

    2012-01-24

    X-ray diffraction experiments on postperovskite (ppv) with compositions (Mg(0.9)Fe(0.1))SiO(3) and (Mg(0.6)Fe(0.4))SiO(3) at Earth core-mantle boundary pressures reveal different crystal structures. The former adopts the CaIrO(3)-type structure with space group Cmcm, whereas the latter crystallizes in a structure with the Pmcm (Pmma) space group. The latter has a significantly higher density (ρ = 6.119(1) g/cm(3)) than the former (ρ = 5.694(8) g/cm(3)) due to both the larger amount of iron and the smaller ionic radius of Fe(2+) as a result of an electronic spin transition observed by X-ray emission spectroscopy (XES). The smaller ionic radius for low-spin compared to high-spin Fe(2+) also leads to an ordered cation distribution in the M1 and M2 crystallographic sites of the higher density ppv structure. Rietveld structure refinement indicates that approximately 70% of the total Fe(2+) in that phase occupies the M2 site. XES results indicate a loss of 70% of the unpaired electronic spins consistent with a low spin M2 site and high spin M1 site. First-principles calculations of the magnetic ordering confirm that Pmcm with a two-site model is energetically more favorable at high pressure, and predict that the ordered structure is anisotropic in its electrical and elastic properties. These results suggest that interpretations of seismic structure in the deep mantle need to treat a broader range of mineral structures than previously considered.

  9. Antiresonant guiding photonic crystal fibers for distributed temperature gradient measurements

    NASA Astrophysics Data System (ADS)

    Biswas, R.; Zeng, J.; Kandel, M.; Fam, A. T.; Cartwright, A. N.; Litchinitser, N. M.

    2011-11-01

    We propose, design, and experimentally demonstrate a novel, simple, distributed refractometric measurement technique based on unique spectral properties of antiresonant-guiding photonic crystal fibers for measuring temperature gradients. We use a simple and accurate analytical model and numerical simulations to guide our experiments. The proposed technique may find applications for monitoring and control of chemical and biological reactions in microfluidic systems.

  10. Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1989-01-01

    The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by an Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.

  11. Characterization of Si nanostructures using internal quantum efficiency measurements

    SciTech Connect

    ZAIDI,SALEEM H.

    2000-04-01

    Hemispherical reflectance and internal quantum efficiency measurements have been employed to evaluate the response of Si nanostructured surfaces formed by using random and periodic reactive ion etching techniques. Random RIE-textured surfaces have demonstrated solar weighted reflectance of {approx} 3% over 300--1,200-nm spectral range even without the benefit of anti-reflection films. Random RIE-texturing has been found to be applicable over large areas ({approximately} 180 cm{sup 2}) of both single and multicrystalline Si surfaces. Due to the surface contamination and plasma-induced damage, RIE-textured surfaces did not initially provide increased short circuit current as expected from the enhanced absorption. Improved processing combined with wet-chemical damage removal etches resulted in significant improvement in the short circuit current with IQEs comparable to the random, wet-chemically textured surfaces. An interesting feature of the RIE-textured surfaces was their superior performance in the near IR spectral range. The response of RIE-textured periodic surfaces can be broadly classified into three distinct regimes. One-dimensional grating structures with triangular profiles are characterized by exceptionally low, polarization-independent reflective behavior. The reflectance response of such surfaces is similar to a graded-index anti-reflection film. The IQE response from these surfaces is severely degraded in the UV-Visible spectral region due to plasma-induced surface damage. One-dimensional grating structures with rectangular profiles exhibit spectrally selective absorptive behavior with somewhat similar IQE response. The third type of grating structure combines broadband anti-reflection behavior with significant IQE enhancement in 800--1,200-nm spectral region. The hemispherical reflectance of these 2D grating structures is comparable to random RIE-textured surfaces. The IQE enhancement in the long wavelength spectral region can be attributed to

  12. Counting the atoms in a 28Si crystal for a new kilogram definition

    NASA Astrophysics Data System (ADS)

    Andreas, B.; Azuma, Y.; Bartl, G.; Becker, P.; Bettin, H.; Borys, M.; Busch, I.; Fuchs, P.; Fujii, K.; Fujimoto, H.; Kessler, E.; Krumrey, M.; Kuetgens, U.; Kuramoto, N.; Mana, G.; Massa, E.; Mizushima, S.; Nicolaus, A.; Picard, A.; Pramann, A.; Rienitz, O.; Schiel, D.; Valkiers, S.; Waseda, A.; Zakel, S.

    2011-04-01

    This paper concerns an international research project aimed at determining the Avogadro constant by counting the atoms in an isotopically enriched silicon crystal. The counting procedure was based on the measurement of the molar volume and the volume of an atom in two 1 kg crystal spheres. The novelty was the use of isotope dilution mass spectrometry as a new and very accurate method for the determination of the molar mass of enriched silicon. Because of an unexpected metallic contamination of the sphere surfaces, the relative measurement uncertainty, 3 × 10-8 NA, is larger by a factor 1.5 than that targeted. The measured value of the Avogadro constant, NA = 6.022 140 82(18) × 1023 mol-1, is the most accurate input datum for the kilogram redefinition and differs by 16 × 10-8 NA from the CODATA 2006 adjusted value. This value is midway between the NIST and NPL watt-balance values.

  13. Imaging System For Measuring Macromolecule Crystal Growth Rates in Microgravity

    NASA Technical Reports Server (NTRS)

    Corder, Eric L.; Briscoe, Jeri

    2004-01-01

    In order to determine how macromolecule crystal quality improvement in microgravity is related to crystal growth characteristics, a team of scientists and engineers at NASA's Marshal Space Flight Center (MSFC) developed flight hardware capable of measuring the crystal growth rates of a population of crystals growing under the same conditions. As crystal growth rate is defined as the change or delta in a defined dimension or length (L) of crystal over time, the hardware was named Delta-L. Delta-L consists of three sub assemblies: a fluid unit including a temperature-controlled growth cell, an imaging unit, and a control unit (consisting of a Data Acquisition and Control Unit (DACU), and a thermal control unit). Delta-L will be used in connection with the Glovebox Integrated Microgravity Isolation Technology (g-LIMIT) inside the Microgravity Science Glovebox (MSG), onboard the International Space Station. This paper will describe the Delta-L imaging system. The Delta-L imaging system was designed to locate, resolve, and capture images of up to 10 individual crystals ranging in size from 10 to 500 microns with a point-to-point accuracy of +/- 2.0 microns within a quartz growth cell observation area of 20 mm x 10 mm x 1 mm. The optical imaging system is comprised of a video microscope camera mounted on computer controlled translation stages. The 3-axis translation stages and control units provide crewmembers the ability to search throughout the growth cell observation area for crystals forming in size of approximately 10 microns. Once the crewmember has selected ten crystals of interest, the growth of these crystals is tracked until the size reaches approximately 500 microns. In order to resolve these crystals an optical system with a magnification of 10X was designed. A black and white NTSC camera was utilized with a 20X microscope objective and a 0.5X custom designed relay lens with an inline light to meet the magnification requirement. The design allows a 500 pm

  14. Kinetics of Passive Oxidation of Hi-Nicalon-S SiC Fibers in Wet Air: Relationships between Si02 Scale Thickness, Crystallization, and Fiber Strength (Preprint)

    DTIC Science & Technology

    2012-07-01

    Temperature Oxidation of Multilayered SiC Processed by Tape Casting and Sintering . J. Eur. Ceram . Soc. 2002;22:2017-79. 6 Approved for public release...earths, that increase oxidation rates, reduce scale viscosity, and lower temperatures for scale crystallization.2-3 Moisture has similar effects .4-9... temperature (24°C). Water saturation at this temperature yields a water/air molar ratio of 0.03. Fibers were oxidized in an alumina muffle tube

  15. Effects of crystal anisotropy on optical phonon resonances in midinfrared second harmonic response of SiC

    NASA Astrophysics Data System (ADS)

    Paarmann, Alexander; Razdolski, Ilya; Gewinner, Sandy; Schöllkopf, Wieland; Wolf, Martin

    2016-10-01

    We study the effects of crystal anisotropy on optical phonon resonances in the second harmonic generation (SHG) from silicon carbide (SiC) in its reststrahl region. By comparing experiments and simulations for isotropic 3C-SiC and anisotropic 4H-SiC in two crystal cuts, we identify several pronounced effects in the nonlinear response, which arise solely from the crystal anisotropy. Specifically, we demonstrate that the axial and planar transverse optical phonon resonances selectively and exclusively appear in the corresponding tensor elements of the nonlinear susceptibility, enabling observation of an intense SHG peak originating from a weak phonon mode due to zone folding along the c axis of 4H-SiC. Similarly, we identify an anisotropy factor ζ ≡ɛ⊥/ɛ∥ responsible for a steep enhancement of the transmitted fundamental fields at the axial longitudinal optical phonon frequency, resulting in strongly enhanced SHG. We develop a general recipe to extract all these features that is directly applicable to all wurtzite-structure polar dielectrics, where a very similar behavior is expected. Our model study illustrates the opportunities for utilizing the crystal anisotropy for selectively enhancing nonlinear-optical effects in polar dielectrics, which could potentially be extended to built-in anisotropy in artificially designed hybrid materials.

  16. Behavior of nitrogen in Si crystal during irradiation and post-annealing

    SciTech Connect

    Inoue, Naohisa; Oyama, Hidenori; Watanabe, Kaori; Seki, Hirofumi; Kawamura, Yuichi

    2014-02-21

    Radiation induced complexes in nitrogen (N) -doped silicon crystal was investigated by highly sensitive infrared absorption spectroscopy. The absorption by N{sub 2} pair was reduced by the electron irradiation in FZ crystals. The absorptions appeared on both sides of N{sub 2} line at 766 cm{sup −1}, at about 725 and 778 cm{sup −1}. By the annealing, N{sub 2} lines recovered a little at 600 °C and mostly at 800 °C. The above new absorption lines reduced by the annealing at lower temperatures and other absorption appeared. In CZ silicon, N{sub 2} lines did not change by the irradiation. Dominant absorption in low carbon FZ silicon was that of C-rich type complexes, VO and I{sub n}C{sub i}O{sub im}(n=0–3, m=0,1). Dominant absorption in the irradiated low carbon CZ silicon was that of C-lean type complexes I{sub n}O{sub 2+mi}(n=1, 2, m=0, 1), and the decrease of C-lean type O{sub 2i} and TDD was observed. By the annealing of CZ Si, VO{sub n} (n=2–4) formation and annihilation was observed.

  17. Achieving omnidirectional photonic band gap in sputter deposited TiO{sub 2}/SiO{sub 2} one dimensional photonic crystal

    SciTech Connect

    Jena, S. Tokas, R. B.; Sarkar, P.; Thakur, S.; Sahoo, N. K.; Haque, S. Maidul; Misal, J. S.; Rao, K. D.

    2015-06-24

    The multilayer structure of TiO{sub 2}/SiO{sub 2} (11 layers) as one dimensional photonic crystal (1D PC) has been designed and then fabricated by using asymmetric bipolar pulse DC magnetron sputtering technique for omnidirectional photonic band gap. The experimentally measured photonic band gap (PBG) in the visible region is well matched with the theoretically calculated band structure (ω vs. k) diagram. The experimentally measured omnidirectional reflection band of 44 nm over the incident angle range of 0°-70° is found almost matching within the theoretically calculated band.

  18. Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal

    SciTech Connect

    Valvo, M.; Bongiorno, C.; Giannazzo, F.; Terrasi, A.

    2013-01-21

    Transmission electron microscopy (TEM), atomic force microscopy, and Rutherford backscattering spectrometry (RBS) have been used to investigate the morphology, structure, and composition of self-assembled Ge islands grown on Si (001) substrates by molecular beam epitaxy (MBE) at different temperatures. Increasing the temperature from 550 Degree-Sign C to 700 Degree-Sign C causes progressive size and shape uniformity, accompanied by enhanced Si-Ge intermixing within the islands and their wetting layer. Elemental maps obtained by energy filtered-TEM (EF-TEM) clearly show pronounced Si concentration not only in correspondence of island base perimeters, but also along their curved surface boundaries. This phenomenon is strengthened by an increase of the growth temperature, being practically negligible at 550 Degree-Sign C, while very remarkable already at 650 Degree-Sign C. The resulting island shape is affected, since this localized Si enrichment not only provides strain relief near their highly stressed base perimeters but it also influences the cluster surface energy by effective alloying, so as to form Si-enriched SiGe interfaces. Further increase to 700 Degree-Sign C causes a shape transition where more homogenous Si-Ge concentration profiles are observed. The crucial role played by local 'flattened' alloyed clusters, similar to truncated pyramids with larger bases and enhanced Si enrichment at coherently stressed interfaces, has been further clarified by EF-TEM analysis of a multi-layered Ge/Si structure containing stacked Ge islands grown at 650 Degree-Sign C. Sharp accumulation of Si has been here observed not only in proximity of the uncapped island surface in the topmost layer but also at the buried Ge/Si interfaces and even in the core of such capped Ge islands.

  19. Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Crespillo, M. L.; Huang, Q.; Wang, T. J.; Liu, P.; Wang, X. L.

    2017-02-01

    As one of the representative ABO3 perovskite-structured oxides, lanthanum aluminate (LaAlO3) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO3-based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided-mode measurement and

  20. Determination of the SiO(2)/Si interface roughness by diffuse reflectance measurements.

    PubMed

    Roos, A; Bergkvist, M; Ribbing, C G

    1988-11-15

    The problem of determining the roughness of the SiO(2)/Si interface is treated. A model is used based on the Fresnel formalism and scalar scattering theory. The resulting formulas express the diffuse reflectance as a function of the optical constants of the two materials, the oxide thickness and the rms roughness of the interfaces. Using the roughness values as adjustable parameters, quantitative information about the interface roughness is obtained from the diffuse reflectance spectra for an SiO(2)/Si double layer. Excellent agreement between calculated and experimental spectra is obtained for an rms roughness of 9.0 nm at the front surface and 2.2 nm at the oxide substrate interface for the case of a low-pressure low-temperature CVD film of SiO(2) on Si.

  1. Determination of the SiO(2)/Si interface roughness by diffuse reflectance measurements.

    PubMed

    Roos, A; Bergkvist, M; Ribbing, C G

    1988-10-15

    The problem of determining the roughness of the SiO(2)/Si interface is treated. A model is used based on the Fresnel formalism and scalar scattering theory. The resulting formulas express the diffuse reflectance as a function of the optical constants of the two materials, the oxide thickness and the rms roughness of the interfaces. Using the roughness values as adjustable parameters, quantitative information about the interface roughness is obtained from the diffuse reflectance spectra for an SiO(2)/Si double layer. Excellent agreement between calculated and experimental spectra is obtained for an rms roughness of 9.0 nm at the front surface and 2.2 nm at the oxide substrate interface for the case of a low-pressure low-temperature CVD film of SiO(2) on Si.

  2. Luminescence of SiO2 and GeO2 crystals with rutile structure. Comparison with α-quartz crystals and relevant glasses (Review Article)

    NASA Astrophysics Data System (ADS)

    Trukhin, A. N.

    2016-07-01

    Luminescence properties of SiO2 in different structural states are compared. Similar comparison is made for GeO2. Rutile and α-quartz structures as well as glassy state of these materials are considered. Main results are that for α-quartz crystals the luminescence of self-trapped exciton is the general phenomenon that is absent in the crystal with rutile structure. In rutile structured SiO2 (stishovite) and GeO2 (argutite) the main luminescence is due to a host material defect existing in as-received (as-grown) samples. The defect luminescence possesses specific two bands, one of which has a slow decay (for SiO2 in the blue and for GeO2, in green range) and another, a fast ultraviolet (UV) band (4.75 eV in SiO2 and at 3 eV in GeO2). In silica and germania glasses, the luminescence of self-trapped exciton coexists with defect luminescence. The latter also contains two bands: one in the visible range and another in the UV range. The defect luminescence of glasses was studied in details during last 60-70 years and is ascribed to oxygen deficient defects. Analogous defect luminescence in the corresponding pure nonirradiated crystals with α-quartz structure is absent. Only irradiation of a α-quartz crystal by energetic electron beam, γ-rays and neutrons provides defect luminescence analogous to glasses and crystals with rutile structure. Therefore, in glassy state the structure containing tetrahedron motifs is responsible for existence of self-trapped excitons and defects in octahedral motifs are responsible for oxygen deficient defects.

  3. Thermal expansion and elastic anisotropy in single crystal Al2O3 and SiC reinforcements

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Li, Zhuang; Bradt, Richard C.

    1994-01-01

    In single crystal form, SiC and Al2O3 are attractive reinforcing components for high temperature composites. In this study, the axial coefficients of thermal expansion and single crystal elastic constants of SiC and Al2O3 were used to determine their coefficients of thermal expansion and Young's moduli as a function of crystallographic orientation and temperature. SiC and Al2O3 exhibit a strong variation of Young's modulus with orientation; however, their moduli and anisotropies are weak functions of temperature below 1000 C. The coefficients of thermal expansion exhibit significant temperature dependence, and that of the non-cubic Al2O3 is also a function of crystallographic orientation.

  4. Phase diagram and thermal expansion measurements on the system URu2-xFexSi2.

    PubMed

    Ran, Sheng; Wolowiec, Christian T; Jeon, Inho; Pouse, Naveen; Kanchanavatee, Noravee; White, Benjamin D; Huang, Kevin; Martien, Dinesh; DaPron, Tyler; Snow, David; Williamsen, Mark; Spagna, Stefano; Riseborough, Peter S; Maple, M Brian

    2016-11-22

    Thermal expansion, electrical resistivity, magnetization, and specific heat measurements were performed on URu2-xFexSi2 single crystals for various values of Fe concentration x in both the hidden-order (HO) and large-moment antiferromagnetic (LMAFM) regions of the phase diagram. Our results show that the paramagnetic (PM) to HO and LMAFM phase transitions are manifested differently in the thermal expansion coefficient. The uniaxial pressure derivatives of the HO/LMAFM transition temperature T0 change dramatically when crossing from the HO to the LMAFM phase. The energy gap also changes consistently when crossing the phase boundary. In addition, for Fe concentrations at xc ≈ 0.1, we observe two features in the thermal expansion upon cooling, one that appears to be associated with the transition from the PM to the HO phase and another one at lower temperature that may be due to the transition from the HO to the LMAFM phase.

  5. Crystal Lattice Controlled SiGe Thermoelectric Materials with High Figure of Merit

    NASA Technical Reports Server (NTRS)

    Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Lee, Kunik; Choi, Sang H.

    2010-01-01

    Direct energy conversion between thermal and electrical energy, based on thermoelectric (TE) effect, has the potential to recover waste heat and convert it to provide clean electric power. The energy conversion efficiency is related to the thermoelectric figure of merit ZT expressed as ZT=S(exp 2)(sigma)T/Kappa, T is temperature, S is the Seebeck coefficient, sigma is conductance and Kappa is thermal conductivity. For a lower thermal conductivity Kappa and high power factor (S(exp 2)(sigma)), our current strategy is the development of rhombohedrally strained single crystalline SiGe materials that are highly [111]-oriented twinned. The development of a SiGe "twin lattice structure (TLS)" plays a key role in phonon scattering. The TLS increases the electrical conductivity and decreases thermal conductivity due to phonon scattering at stacking faults generated from the 60 X rotated primary twin structure. To develop high performance materials, the substrate temperature, chamber working pressure, and DC sputtering power are controlled for the aligned growth production of SiGe layer and TLS on a c-plane sapphire. Additionally, a new elevated temperature thermoelectric characterization system, that measures the thermal diffusivity and Seebeck effect nondestructively, was developed. The material properties were characterized at various temperatures and optimized process conditions were experimentally determined. The present paper encompasses the technical discussions toward the development of thermoelectric materials and the measurement techniques.

  6. Microstructural evolution on crystallizing the glassy phase in a 6 weight percent Y2O3-Si3N4 ceramic

    NASA Technical Reports Server (NTRS)

    Lee, W. E.; Drummond, C. H., III; Hilmas, G. E.; Kiser, J. D.; Sanders, W. A.

    1988-01-01

    X-ray diffraction and analytical electron microscopy have been used to study the crystallization of the grain-boundary glass in a 6 wt pct Y2O3-Si3N4 ceramic. Upon crystallization, high densities of dislocations formed in the Si3N4 grains and remained after 5 h at temperature. However, prolonged holds at the crystallization temperature effectively annealed out the dislocations. Other features present in the microstructure are characterized.

  7. Single-crystal Elasticity of Zoisite Ca2Al3Si3O12(OH) by Brillouin Scattering

    NASA Astrophysics Data System (ADS)

    Mao, Z.; Jiang, F.; Duffy, T. S.

    2005-12-01

    Zoisite, Ca 2Al3Si3O12(OH), is an important metamorphic mineral and one of the main H2O-containing phases minerals in subduction zones. Experiments in basaltic compositions have shown that zoisite can remain stable to pressures of ~3.1 GPa at 650°C (Forneris and Holloway, 2003), and it is stable to ~7 GPa and 1000°C in the calcium-aluminum-silicon-hydrogen system (Poli et al, 1998). The bulk modulus of zoisite was measured by X-ray diffraction in both multi-anvil apparatus and diamond anvil cells (Holland et al, 1996; Comodi et al, 1997; Pawley et al, 1998; Grevel et al, 2000). However, existing results show large discrepancies. That cannot be explained by presence of small amounts of Fe. In order to provide reliable elastic moduli, the single-crystal elastic constants of zoisite were determined by Brillouin spectroscopy. Three platelets were cut from a gem-quality zoisite sample. Single-crystal x-ray diffraction was performed at x17C of Brookhaven National Laboratory. The lattice parameters are a=16.207(5), b=5.540(5), c=10.056(2) Å with a calculated density 3.343(3)g/cm3. The Brillouin spectra were recorded in a forward scattering geometry at ambient conditions. Measurements were made in a total of 37 directions in each plane. The data were inverted for 9 elastic tensor components and 9 crystal orientation parameters. The single crystal elastic tensor constants C11, C12, C13, C22, C23, C33, C44, C55, C66 are 279.1(8), 95.1(18), 91.3(16), 249.3(8), 30.9(8), 216.5(8), 51.6(4), 80.2(4), 65.9(3)GPa respectively. The resulting bounds on the adiabatic bulk and shear moduli are 127.9(4) and 72.6(2)GPa respectively. Our results are generally consistent with previous static compression studies although we obtain higher c axis compressibility than some X-ray studies. Compared with the elastic moduli of lawsonite, zoisite has a similar bulk modulus (~125 GPa), but a 30% larger shear modulus than lawsonite (~52 GPa) (Sinogeikin et al, 2000). The VP/VS ratio is 1.76 for

  8. Pilot tests of a PET detector using the TOF-PET ASIC based on monolithic crystals and SiPMs

    NASA Astrophysics Data System (ADS)

    Aguilar, A.; González-Montoro, A.; González, A. J.; Hernández, L.; Monzó, J. M.; Bugalho, R.; Ferramacho, L.; Benlloch, J. M.

    2016-12-01

    In this work we show pilot tests of PET detector blocks using the TOF-PET ASIC, coupled to SiPM detector arrays and different crystal configurations. We have characterized the main ASIC features running calibration processes to compensate the time dispersion among the different ASIC/SiPM paths as well as for the time walk on the arrival of optical photons. The aim of this work is to use of LYSO monolithic crystals and explore their photon Depth of Interaction (DOI) capabilities, keeping good energy and spatial resolutions. First tests have been carried out with crystal arrays. Here we made it possible to reach a coincidence resolving times (CRT) of 370 ps FWHM, with energy resolutions better than 20% and resolving well 2 mm sized crystal elements. When using monolithic crystals, a single-pixel LYSO reference crystal helped to explore the CRT performance. We studied different strategies to provide the best timestamp determination in the monolithic scintillator. Times around 1 ns FWHM have been achieved in these pilot studies. In terms of spatial and energy resolution, values of about 3 mm and better than 30% were found, respectively. We have also demonstrated the capability of this system (monolithic and ASIC) to return accurate DOI information.

  9. Volume measurements of 28Si spheres using an interferometer with a flat etalon to determine the Avogadro constant

    NASA Astrophysics Data System (ADS)

    Kuramoto, N.; Fujii, K.; Yamazawa, K.

    2011-04-01

    The volumes of two 1 kg silicon spheres, AVO28-S5 and AVO28-S8, fabricated from a 28Si-enriched crystal were measured to determine the Avogadro constant by the x-ray crystal density method in the International Avogadro Coordination Project. The volumes were determined from diameter measurements of the two spheres using a laser interferometer with a flat etalon. In the diameter measurement, the sphere was placed between the two flat etalon plates. The gaps between the sphere and the etalon plates and the distance between the etalon plates were measured by phase-shifting interferometry with optical frequency tuning. The apparent volumes of the 28Si spheres were determined from the diameter measurement in many directions with relative combined standard uncertainties of 5.0 × 10-8 and 4.4 × 10-8 for AVO28-S5 and AVO28-S8, respectively. The effect of the surface layer on the diameter measurement was evaluated on the basis of the results of characterizing the sphere surface. By taking into account the effect of the surface layer, the silicon core volume excluding the surface layer and the actual volume including the surface layer were also determined. Details of the interferometer, data analysis and the uncertainty in the measurement are described.

  10. Optical properties of self-assembled TiO2-SiO2 double-layered photonic crystals.

    PubMed

    Oh, Yong Taeg; Koo, Bo Ra; Shin, Dong Chan

    2013-01-01

    The optical properties of self-assembled TiO2/SiO2 double-layered photonic crystals were examined using SiO2 and TiO2 nanopowders. The SiO2 and TiO2 nanopowders were fabricated using the well-known Stöber process, and the double-layered structure was self-assembled by an evaporation method. Self-assembled TiO2 thin film was coated at a 1.2 mm thickness by the evaporation process, and 3 atomic layers of the SiO2 layer was coated onto the TiO2 thin film. The relative reflectance peak intensity of the photonic bandgap in the specimen was 13% before thermal treatment. The peak value was increased by sequential heat-treatments and reached the highest value of 21% at 400 degrees C.

  11. Carrier Lifetime Measurement in n(-) 4H-SiC Epilayers

    DTIC Science & Technology

    2008-01-01

    limitations of Si -based technology. However, in spite of the progress that has been made in both materials growth and device fabrication, material...lifetime measurement techniques have been primarily fo- cused on Si and on electrical techniques that are directly applicable to device structures...compared to experi- ment. A. Transient free carrier absorption The TFCA technique has been applied in Si Refs. 18–20 as well as in SiC.21–23 In this

  12. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

    NASA Astrophysics Data System (ADS)

    Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

    2016-08-01

    Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

  13. Influence of the chemical composition of rapidly quenched amorphous alloys (Ni, Fe, Cr)-B-Si on its crystallization process

    NASA Astrophysics Data System (ADS)

    Elmanov, G.; Dzhumaev, P.; Ivanitskaya, E.; Skrytnyi, V.; Ruslanov, A.

    2016-04-01

    This paper presents results of research of the structure and phase transformations during the multistage crystallization of the metallic glasses with the compositions Ni71,5Cr6,8Fe2,7B11,9Si7,1 and Ni63,4Cr7,4Fe4,3Mn0,8B15,6Si8,5 labeled as AWS BNi-2 according to American Welding Society. Differential scanning calorimetry (DSC), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX) were used as experimental research methods. The influence of the alloys chemical composition (boron, manganese and iron) on the temperatures and the exothermic heat effects of phase transformations, as well as on the phase composition of alloys at three stages of crystallization was analyzed. We present a thermodynamic explanation of the observed heat effects. It has been shown that manganese has the main influence on the phase transformations temperatures and heat effects in these two alloys. It is also assumed that at the final crystallization stage simultaneously with the formation of phases Ni3B and β1-Ni3Si should occur the nucleation of borides of CrB type with high Cr and low Si content.

  14. Skin friction measurement with partially exposed polymer dispersed liquid crystals

    NASA Technical Reports Server (NTRS)

    Parmar, D. S.; Holmes, H. K.

    1993-01-01

    Partially exposed polymer dispersed liquid crystal thin film (10-25 microns) deposited on a flat glass substrate has been used for the first time to measure skin friction. Utilizing the shear-stress-induced director reorientation in the partially exposed liquid-crystal droplets, optical transmission under crossed polarization has been measured as a function of the air flow differential pressure. Direct measurement of the skin friction with a skin friction drag balance, under the same aerodynamic conditions, lets us correlate the skin friction with optical transmission. This provides a unique technique for the direct measurement of skin friction from the transmitted light intensity. The results are in excellent agreement with the model suggested in this paper.

  15. Dielectric Constant Measurements on Lead Azide Single Crystals

    DTIC Science & Technology

    1980-09-01

    1000 Hz. The dielectric constants of the azides of TI, Na, and K Vere also measured and compared to published values. Calculations takf’ into account ...and W. McCrone , "Lead Azide, Pb(N 3 ) 2 , Aial. Chem. 28, 1791 (1956). 9 5 i:% 8. W.L. Garrett, "The Growth of Large Lead Azide Crystals," Mat. Res...10. Handbook of Chemistry and Physics, The Chemical Rubber Publishing Co., 1963. 11. J.N. Appleton, and J. Sharma, "Growth of Single Crystals of

  16. Formation of equiaxed crystal structures in directionally solidified Al-Si alloys using Nb-based heterogeneous nuclei

    PubMed Central

    Bolzoni, Leandro; Xia, Mingxu; Babu, Nadendla Hari

    2016-01-01

    The design of chemical compositions containing potent nuclei for the enhancement of heterogeneous nucleation in aluminium, especially cast alloys such as Al-Si alloys, is a matter of importance in order to achieve homogeneous properties in castings with complex geometries. We identified that Al3Nb/NbB2 compounds are effective heterogeneous nuclei and are successfully produced in the form of Al-2Nb-xB (x = 0.5, 1 and 2) master alloys. Our study shows that the inoculation of Al-10Si braze alloy with these compounds effectively promotes the heterogeneous nucleation of primary α-Al crystals and reduces the undercooling needed for solidification to take place. Moreover, we present evidences that these Nb-based compounds prevent the growth of columnar crystals and permit to obtain, for the first time, fine and equiaxed crystals in directionally solidified Al-10Si braze alloy. As a consequence of the potent heterogeneous particles, the size of the α-Al crystals was found to be less dependent on the processing conditions, especially the thermal gradient. Finally, we also demonstrate that the enhanced nucleation leads to the refinement of secondary phases such as eutectic silicon and primary silicon particles. PMID:28008967

  17. Formation of equiaxed crystal structures in directionally solidified Al-Si alloys using Nb-based heterogeneous nuclei

    NASA Astrophysics Data System (ADS)

    Bolzoni, Leandro; Xia, Mingxu; Babu, Nadendla Hari

    2016-12-01

    The design of chemical compositions containing potent nuclei for the enhancement of heterogeneous nucleation in aluminium, especially cast alloys such as Al-Si alloys, is a matter of importance in order to achieve homogeneous properties in castings with complex geometries. We identified that Al3Nb/NbB2 compounds are effective heterogeneous nuclei and are successfully produced in the form of Al-2Nb-xB (x = 0.5, 1 and 2) master alloys. Our study shows that the inoculation of Al-10Si braze alloy with these compounds effectively promotes the heterogeneous nucleation of primary α-Al crystals and reduces the undercooling needed for solidification to take place. Moreover, we present evidences that these Nb-based compounds prevent the growth of columnar crystals and permit to obtain, for the first time, fine and equiaxed crystals in directionally solidified Al-10Si braze alloy. As a consequence of the potent heterogeneous particles, the size of the α-Al crystals was found to be less dependent on the processing conditions, especially the thermal gradient. Finally, we also demonstrate that the enhanced nucleation leads to the refinement of secondary phases such as eutectic silicon and primary silicon particles.

  18. From stable divalent to valence-fluctuating behaviour in Eu(Rh(1-x)Ir(x))2Si2 single crystals.

    PubMed

    Seiro, Silvia; Geibel, Christoph

    2011-09-21

    We have succeeded in growing high-quality single crystals of the valence-fluctuating system EuIr(2)Si(2), the divalent Eu system EuRh(2)Si(2) and the substitutional alloy Eu(Rh(1-x)Ir(x))(2)Si(2) across the range 0 < x < 1, which we characterized by means of x-ray diffraction, energy-dispersive x-ray spectroscopy, specific heat, magnetization and resistivity measurements. On increasing x, the divalent Eu ground state subsists up to x = 0.25 with a slight increase in Néel temperature, while for 0.3≤x < 0.7 a sharp hysteretic change in susceptibility and resistivity marks the first-order valence transition. For x≳0.7 the broad feature observed in the physical properties is characteristic of the continuous valence evolution beyond the critical end point of the valence transition line, and the resistivity is reminiscent of Kondo-like behaviour while the Sommerfeld coefficient indicates a mass renormalization of at least a factor of 8. The resulting phase diagram is similar to those reported for polycrystalline Eu(Pd(1-x)Au(x))(2)Si(2) and EuNi(2)(Si(1-x)Ge(x))(2), confirming its generic character for Eu systems, and markedly different to those of homologue Ce and Yb systems, which present a continuous suppression of the antiferromagnetism accompanied by a very smooth evolution of the valence. We discuss these differences and suggest them to be related to the large polarization energy of the Eu half-filled 4f shell. We further argue that the changes in the rare earth valence between RRh(2)Si(2) and RIr(2)Si(2) (R = Ce, Eu, Yb) are governed by a purely electronic effect and not by a volume effect.

  19. Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE

    NASA Astrophysics Data System (ADS)

    Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D.; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

    2017-03-01

    We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO2-mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

  20. Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE.

    PubMed

    Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

    2017-03-01

    We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO2-mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

  1. Influence of growth atmosphere on Ca3TaGa3Si2O14 single crystals optical properties

    NASA Astrophysics Data System (ADS)

    Kozlova, N. S.; Kozlova, A. P.; Spassky, D. A.; Zabelina, E. V.

    2017-02-01

    Ca3TaGa3Si2O14 crystals were grown by the Czochralski technique in different atmospheres. Crystal grown in pure Ar was colourless and in N2+(1-3)%O2 – yellowish coloured. In the absorption spectra of yellowish CTGS we observed anisotropy: no significant absorption bands are observed in Z direction, but in X direction we observe absorption bands at 360 nm and at (470-480) nm. In case of colourless CTGS we observed extremely low intensity of the absorption band at ∼500 nm, in near UV we observed anisotropy of absorption and absorption band at ∼290 nm for X direction. Dichroism degree intensity is extremely low for these crystals, with maximum connected with coloration at 470 nm for yellow crystal and in case of colourless CTGS the main extrema are observed in near UV.

  2. Crystallization kinetics and recording characteristics of Cu/a-Si bilayer recording film for write-once Blu-ray disk

    NASA Astrophysics Data System (ADS)

    Her, Yung-Chiun; Wu, Chun-Lin

    2004-09-01

    The crystallization kinetics and recording characteristics of the Cu/a-Si bilayer recording film have been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Si with a thin Cu metal layer were reduced to about 485°C and 3.3+/-0.1 eV, respectively, indicating that inserting a thin Cu underlayer could effectively reduce the crystallization temperature and activation energy for crystallization of a-Si. The reaction exponent was determined to be around 1.8, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of the grain growth process. This is consistent with the hypothesis that the Cu3Si precipitates act as the nucleation sites for the subsequent crystallization of a-Si in the Cu/a-Si bilayer recording film. Additionally, the maximum data-transfer-rates that can be achieved by the Cu/a-Si bilayer recording film at recording powers of 6, 8, and 10 mW were estimated to be about 23, 46, and 223 Mb/s, respectively.

  3. Liquid crystal infiltrated photonic crystal fibers for electric field intensity measurements.

    PubMed

    Mathews, Sunish; Farrell, Gerald; Semenova, Yuliya

    2011-06-10

    The application of nematic liquid crystal infiltrated photonic crystal fiber as a sensor for electric field intensity measurement is demonstrated. The device is based on an intrinsic sensing mechanism for electric fields. The sensor probe, which consists of a 1  cm infiltrated section of photonic crystal fiber with a lateral size of ∼125  μm, is very compact with small size and weight. A simple all-fiber design for the sensor is employed in an intensity based measurement scheme. The transmitted and reflected power of the infiltrated photonic crystal fiber is shown to have a linear response with the applied electric field. The sensor is operated in the telecommunication window at 1550  nm. The temperature dependence of the device at this operating wavelength is also experimentally studied and discussed. These structures can be used to accurately measure electric field intensity and can be used for the fabrication of all-fiber sensors for high electric field environments as both an in-line and reflective type point sensor.

  4. Robust Population Transfer by Stimulated Raman Adiabatic Passage in a Pr{sup 3+}:Y{sub 2}SiO{sub 5} Crystal

    SciTech Connect

    Klein, Jens; Beil, Fabian; Halfmann, Thomas

    2007-09-14

    We report on the experimental implementation of stimulated Raman adiabatic passage (STIRAP) in a Pr{sup 3+}:Y{sub 2}SiO{sub 5} crystal. Our data provide clear and striking proof for nearly complete population inversion between hyperfine levels in the Pr{sup 3+} ions. The transfer efficiency was monitored by absorption spectroscopy. Time-resolved absorption measurements serve to monitor the adiabatic population dynamics during the STIRAP process. Efficient transfer is observed for negative pulse delays (STIRAP), as well as for positive delays. We identify the latter by an alternative adiabatic passage process.

  5. Determination of struvite crystallization mechanisms in urine using turbidity measurement.

    PubMed

    Triger, Aurélien; Pic, Jean-Stéphane; Cabassud, Corinne

    2012-11-15

    Sanitation improvement in developing countries could be achieved through wastewater treatment processes. Nowadays alternative concepts such as urine separate collection are being developed. These processes would be an efficient way to reduce pollution of wastewater while recovering nutrients, especially phosphorus, which are lost in current wastewater treatment methods. The precipitation of struvite (MgNH(4)PO(4)∙6H(2)O) from urine is an efficient process yielding more than 98% phosphorus recovery with very high reaction rates. The work presented here aims to determine the kinetics and mechanisms of struvite precipitation in order to supply data for the design of efficient urine treatment processes. A methodology coupling the resolution of the population balance equation to turbidity measurement was developed, and batch experiments with synthetic and real urine were performed. The main mechanisms of struvite crystallization were identified as crystal growth and nucleation. A satisfactory approximation of the volumetric crystal size distribution was obtained. The study has shown the low influence on the crystallization process of natural organic matter contained in real urine. It has also highlighted the impact of operational parameters. Mixing conditions can create segregation and attrition which influence the nucleation rate, resulting in a change in crystals number, size, and thus final crystal size distribution (CSD). Moreover urine storage conditions can impact urea hydrolysis and lead to spontaneous struvite precipitation in the stock solution also influencing the final CSD. A few limits of the applied methodology and of the proposed modelling, due to these phenomena and to the turbidity measurement, are also discussed.

  6. Crystal structures of RPt{sub 3-x}Si{sub 1-y}(R=Y, Tb, Dy, Ho, Er, Tm, Yb) studied by single crystal X-ray diffraction

    SciTech Connect

    Gribanov, Alexander; Grytsiv, Andriy; Rogl, Peter; Seropegin, Yurii; Giester, Gerald

    2009-07-15

    The crystal structures of ternary compounds RPt{sub 3-x}Si{sub 1-y}(R=Y, Tb, Dy, Ho, Er, Tm, Yb) have been elucidated from X-ray single crystal CCD data. All compounds are isotypic and crystallize in the tetragonal space group P4/mbm. The general formula RPt{sub 3-x}Si{sub 1-y} arises from defects: x{approx}0.20, y{approx}0.14. The crystal structure of RPt{sub 3-x}Si{sub 1-y} can be considered as a packing of four types of building blocks which derive from the CePt{sub 3}B-type unit cell by various degrees of distortion and Pt, Si-defects. - Graphical Abstract: Electron density in RPt{sub 3-x}Si{sub 1-y} at 0, 1/2 , 0.

  7. X-Ray Crystal Structures of ((Me3SiCH2)2InCl)2 and ((Me3SiCH2)InCl2)

    DTIC Science & Technology

    1994-01-18

    Continue on reverse of necessary and identify by block number) FIELD GROUP SUB- GROUP synthesis, crystal structure, indium compounds 19. ABSTRACT (Continue...crystal X-ray analysis. Compound I crystallizes as a centrosymmetric dimer, [(Me 3SiCH 2)2 InCI]2 , in the triclinic space group P1 [(Cil), No.2] with unit...1.378 g cm-3 for Z = 1 [R = 0.072 (R. = 0.098)]. Compound II crystallizes as an infinite polymer, [(Me 3SiCH2 )InCI2q,, in the triclinic space group P1

  8. Magnetic Field Induced Phase Transitions in Gd5(Si1.95Ge2.05)Single Crystal and the Anisotropic Magnetocaloric Effect

    SciTech Connect

    H. Tang; V.K. Pecharsky; A.O. Pecharsky; D.L. Schlagel; T.A. Lograsso; K.A. Gschneidner,jr.

    2004-09-30

    The magnetization measurements using a Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with the magnetic field applied along three crystallographic directions, [001], [010] and [100], were carried out as function of applied field (0-56 kOe) at various temperatures ({approx}5-320 K). The magnetic-field induced phase transformations at temperature above the zero-field critical temperature, i.e. the paramagnetic (PM) {leftrightarrow} ferromagnetic (FM) transitions with application or removal of magnetic field, are found to be temperature dependent and hysteretic. The corresponding critical fields increase with increasing temperature. The magnetic field (H)-temperature (T) phase diagrams have been constructed for the Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with field along the three directions. A small anisotropy has been observed. The magnetocaloric effect (MCE) has been calculated from the isothermal magnetization data, and the observed anisotropy correlates with H-T phase diagrams. The results are discussed in connection with the magnetic-field induced martensitic-like structural transition observed in the Gd{sub 5}(Si{sub 2}Ge{sub 2})-type compounds.

  9. The new kilogram definition based on counting the atoms in a 28Si crystal

    NASA Astrophysics Data System (ADS)

    Becker, Peter

    2012-11-01

    The kilogram is the only unit of measure still defined by a physical object. Now, a marathon effort to tie the kilogram to a constant of nature is nearing the finish line. This paper concerns an international research project aimed at determining the Avogadro constant by counting the atoms in an isotopically enriched silicon crystal. The counting procedure was based on the measurement of the molar volume and the volume of an atom in two 1 kg crystal spheres. The novelty was the use of isotope dilution mass spectrometry as a new and very accurate method for the determination of the molar mass of enriched silicon. Because of an unexpected metallic contamination of the sphere surfaces, the relative measurement uncertainty, ? , results were larger by a factor 1.5 than that targeted. The measured value of the Avogadro constant, ? mol-1 is the most accurate input datum for the kilogram redefinition and differs only by ? from the CODATA 2010 adjusted value. This value is midway between the watt-balance values.

  10. Large tensile elongation behavior of Fe-14 at.% Si single crystal

    SciTech Connect

    Kim, W.Y.; Hanada, S.; Takasugi, T.

    1998-10-09

    A large tensile elongation reaching 180% is observed in Fe{sub 3}Si single crystal with the B2 structure at temperatures of 0.65--0.74T{sub m}, and at initial strain rates of 10{sup {minus}4}--10{sup {minus}3}/s. The large tensile elongation takes place at a steadily increased flow stress with increasing strain. The mechanical parameters evaluated for a constitutive equation show that the strain rate sensitivity is as large as 0.38 and the apparent activation energy ranges from 230 to 280 kJ/mol. The deformation microstructure responsible for the large tensile elongation consists of subgrain microstructure, and indicates that glide and climb motions of the {l_angle}111{r_angle}-type dislocations are concomitantly operating. It is suggested that comparable work hardening (by the glide motion of dislocations) with the dynamic recovery (by the climb motion of dislocations) takes place, and leads to a steadily increased flow stress and favorable value of strain rate sensitivity, resulting in large plastic elongation and high fracture resistance.

  11. Epitaxial growth of largely mismatched crystals on H-terminated Si(111) surfaces.

    PubMed

    Asaoka, Hidehito

    2010-12-01

    A strontium or strontium oxide epitaxial layer was grown using a monoatomic buffer layer of hydrogen on silicon, in spite of a huge lattice mismatch. The onset of the initial growth stage of strontium crystals occur with only one atomic layer deposition. To investigate the growth mechanism in the highly mismatched system, combination analysis using neutron reflection, reflection high-energy electron diffraction, x-ray photoelectron spectra, and stress measurements is employed. The interface structure has opened up a new way to fabricate novel heterostructures, consisting of various kinds of one-, two- or three-dimensional materials for future silicon-based technology.

  12. Precursor routes to quaternary intermetallics: Synthesis, crystal structure, and physical properties of clathrate-II Cs8Na16Al24Si112

    NASA Astrophysics Data System (ADS)

    Wei, Kaya; Dong, Yongkwan; Nolas, George S.

    2016-05-01

    A new quaternary clathrate-II composition, Cs8Na16Al24Si112, was synthesized by kinetically controlled thermal decomposition (KCTD) employing both NaSi and NaAlSi as the precursors and CsCl as a reactive flux. The crystal structure and composition of Cs8Na16Al24Si112 were investigated using both Rietveld refinement and elemental analysis, and the temperature dependent transport properties were investigated. Our results indicate that KCTD with multiple precursors is an effective method for the synthesis of multinary inorganic phases that are not easily accessible by traditional solid-state synthesis or crystal growth techniques.

  13. Crystallization paths in SiO2-Al2O3-CaO system as a genotype of silicate materials

    NASA Astrophysics Data System (ADS)

    Lutsyk, V. I.; Zelenaya, A. E.

    2013-12-01

    The phases trajectories in the fields of primary crystallization of cristobalite (SiO2cr), tridymite (SiO2tr), mullite (3Al2O3-2SiO2) and in a field of liquid immiscibility are analyzed on a basis of computer model for T-x-y diagram of SiO2-Al2O3-CaO system. The concentration fields with unique set of microconstituents and the fields without individual crystallization schemes and microconstituents are revealed.

  14. Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS

    NASA Astrophysics Data System (ADS)

    Geiser, Jürgen; Klein, Olaf; Philip, Peter

    2007-05-01

    We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). The results are computed using our software WIAS-HiTNIHS, the WIAS High Temperature Numerical Induction Heating Simulator; pronunciation: ˜hit-nice, by solving the energy balance in the entire growth apparatus, taking into account the heat conduction in the solid parts as well as in gas cavities, and also accounting for the radiative heat transfer between the surfaces of the gas cavities. The insulation in a PVT growth apparatus usually consists of graphite felt, where the fibers are aligned in one particular direction, resulting in an anisotropic thermal conductivity. We show that neglecting this anisotropy can overestimate the SiC crystal's temperature by 70 K or underestimate the required heating power by 800 W.

  15. Orientational order parameter measurements of discotic liquid crystal

    SciTech Connect

    Kaur, Supreet; Raina, K. K.; Kumar, S.; Pratibha, R.

    2014-04-24

    The IR dichroism technique is a convenient method which can be used to measure the molecular order parameter corresponding to the IR bands exclusively present in the disc –like molecules in discotic liquid crystal (DLC). To measure orientational order parameter, homeotropic alignment of discotic liquid crystal was attained by slow cooling of sample from isotropic phase on untreated flat CaF{sub 2} substrate. The homeotropic alignment thus achieved was found to be thermodynamically stable in the discotic mesophase. IR spectra were recorded at different temperatures for the DLC. The order parameter was calculated by comparing the spectra of discotic phase with that of the isotropic phase. Order parameter has been presented as function of temperature for different significant IR bands present in the DLC.

  16. Calorimetric Measurements at Low Temperatures in Toluene Glass and Crystal

    NASA Astrophysics Data System (ADS)

    Alvarez-Ney, C.; Labarga, J.; Moratalla, M.; Castilla, J. M.; Ramos, M. A.

    2017-04-01

    The specific heat of toluene in glass and crystal states has been measured both at low temperatures down to 1.8 K (using the thermal relaxation method) and in a wide temperature range up to the liquid state (using a quasiadiabatic continuous method). Our measurements therefore extend earlier published data to much lower temperatures, thereby allowing to explore the low-temperature "glassy anomalies" in the case of toluene. Surprisingly, no indication of the existence of tunneling states is found, at least within the temperature range studied. At moderate temperatures, our data either for the glass or for the crystal show good agreement with those found in the literature. Also, we have been able to prepare bulk samples of toluene glass by only doping with 2% mol ethanol instead of with higher impurity doses used by other authors.

  17. Volume measurements of 28Si-enriched spheres using an improved optical interferometer for the determination of the Avogadro constant

    NASA Astrophysics Data System (ADS)

    Kuramoto, Naoki; Azuma, Yasushi; Inaba, Hajime; Fujii, Kenichi

    2017-04-01

    For the determination of the Avogadro constant by the x-ray crystal density method, an accurate volume measurement of 1 kg Si spheres is of primary importance. For this purpose, an optical interferometer was improved and used to measure the volumes of two 1 kg silicon spheres which were manufactured from a silicon crystal highly enriched in 28Si. The apparent volumes of the spheres, which do not take into account the influence of the surface layers on the volume measurement by interferometry, were determined with a relative standard uncertainty of as small as 2.0  ×  10‑8. The surface of the spheres was characterized by using an improved spectroscopic ellipsometer. By considering the influence of the surface layers, the core volumes of the spheres, which exclude the surface layers, were determined. These results were used for the determination of the Avogadro constant in 2015 as a framework organized by the International Avogadro Coordination project. This paper provides details on the measurements, the improvements made to the apparatus, the data analysis and the uncertainty evaluation.

  18. Side readout of long scintillation crystal elements with digital SiPM for TOF-DOI PET

    SciTech Connect

    Yeom, Jung Yeol E-mail: cslevin@stanford.edu; Vinke, Ruud; Levin, Craig S. E-mail: cslevin@stanford.edu

    2014-12-15

    Purpose: Side readout of scintillation light from crystal elements in positron emission tomography (PET) is an alternative to conventional end-readout configurations, with the benefit of being able to provide accurate depth-of-interaction (DOI) information and good energy resolution while achieving excellent timing resolution required for time-of-flight PET. This paper explores different readout geometries of scintillation crystal elements with the goal of achieving a detector that simultaneously achieves excellent timing resolution, energy resolution, spatial resolution, and photon sensitivity. Methods: The performance of discrete LYSO scintillation elements of different lengths read out from the end/side with digital silicon photomultipliers (dSiPMs) has been assessed. Results: Compared to 3 × 3 × 20 mm{sup 3} LYSO crystals read out from their ends with a coincidence resolving time (CRT) of 162 ± 6 ps FWHM and saturated energy spectra, a side-readout configuration achieved an excellent CRT of 144 ± 2 ps FWHM after correcting for timing skews within the dSiPM and an energy resolution of 11.8% ± 0.2% without requiring energy saturation correction. Using a maximum likelihood estimation method on individual dSiPM pixel response that corresponds to different 511 keV photon interaction positions, the DOI resolution of this 3 × 3 × 20 mm{sup 3} crystal side-readout configuration was computed to be 0.8 mm FWHM with negligible artifacts at the crystal ends. On the other hand, with smaller 3 × 3 × 5 mm{sup 3} LYSO crystals that can also be tiled/stacked to provide DOI information, a timing resolution of 134 ± 6 ps was attained but produced highly saturated energy spectra. Conclusions: The energy, timing, and DOI resolution information extracted from the side of long scintillation crystal elements coupled to dSiPM have been acquired for the first time. The authors conclude in this proof of concept study that such detector configuration has the potential to enable

  19. Side readout of long scintillation crystal elements with digital SiPM for TOF-DOI PET

    PubMed Central

    Yeom, Jung Yeol; Vinke, Ruud; Levin, Craig S.

    2014-01-01

    Purpose: Side readout of scintillation light from crystal elements in positron emission tomography (PET) is an alternative to conventional end-readout configurations, with the benefit of being able to provide accurate depth-of-interaction (DOI) information and good energy resolution while achieving excellent timing resolution required for time-of-flight PET. This paper explores different readout geometries of scintillation crystal elements with the goal of achieving a detector that simultaneously achieves excellent timing resolution, energy resolution, spatial resolution, and photon sensitivity. Methods: The performance of discrete LYSO scintillation elements of different lengths read out from the end/side with digital silicon photomultipliers (dSiPMs) has been assessed. Results: Compared to 3 × 3 × 20 mm3 LYSO crystals read out from their ends with a coincidence resolving time (CRT) of 162 ± 6 ps FWHM and saturated energy spectra, a side-readout configuration achieved an excellent CRT of 144 ± 2 ps FWHM after correcting for timing skews within the dSiPM and an energy resolution of 11.8% ± 0.2% without requiring energy saturation correction. Using a maximum likelihood estimation method on individual dSiPM pixel response that corresponds to different 511 keV photon interaction positions, the DOI resolution of this 3 × 3 × 20 mm3 crystal side-readout configuration was computed to be 0.8 mm FWHM with negligible artifacts at the crystal ends. On the other hand, with smaller 3 × 3 × 5 mm3 LYSO crystals that can also be tiled/stacked to provide DOI information, a timing resolution of 134 ± 6 ps was attained but produced highly saturated energy spectra. Conclusions: The energy, timing, and DOI resolution information extracted from the side of long scintillation crystal elements coupled to dSiPM have been acquired for the first time. The authors conclude in this proof of concept study that such detector configuration has the potential to enable outstanding

  20. Determination of Low Loss in Isotopically Pure Single Crystal 28Si at Low Temperatures and Single Microwave Photon Energy

    PubMed Central

    Kostylev, Nikita; Goryachev, Maxim; Bulanov, Andrey D.; Gavva, Vladimir A.; Tobar, Michael E.

    2017-01-01

    The low dielectric losses of an isotopically pure single crystal 28Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order 2 × 106 (dielectric loss ~5 × 10−7) at high powers, degrading to 7 × 10−5 (dielectric loss ~1.4 × 10−6 at single photon energy. A very low-loss narrow line width paramagnetic spin flip transition was detected with extreme sensitivity in 28Si, with very small concentration below 1010 cm−3 (less than 10 parts per trillion) and g-factor of 1.995 ± 0.008. Such determination was only possible due to the low dielectric photonic losses combined with the long lifetime of the spin transition (low magnetic loss), which enhances the magnetic AC susceptibility. Such low photonic loss at single photon energy combined with the narrow line width of the spin ensemble, indicate that single crystal 28Si could be an important crystal for future cavity QED experiments. PMID:28317908

  1. Determination of Low Loss in Isotopically Pure Single Crystal (28)Si at Low Temperatures and Single Microwave Photon Energy.

    PubMed

    Kostylev, Nikita; Goryachev, Maxim; Bulanov, Andrey D; Gavva, Vladimir A; Tobar, Michael E

    2017-03-20

    The low dielectric losses of an isotopically pure single crystal (28)Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order 2 × 10(6) (dielectric loss ~5 × 10(-7)) at high powers, degrading to 7 × 10(-5) (dielectric loss ~1.4 × 10(-6) at single photon energy. A very low-loss narrow line width paramagnetic spin flip transition was detected with extreme sensitivity in (28)Si, with very small concentration below 10(10) cm(-3) (less than 10 parts per trillion) and g-factor of 1.995 ± 0.008. Such determination was only possible due to the low dielectric photonic losses combined with the long lifetime of the spin transition (low magnetic loss), which enhances the magnetic AC susceptibility. Such low photonic loss at single photon energy combined with the narrow line width of the spin ensemble, indicate that single crystal (28)Si could be an important crystal for future cavity QED experiments.

  2. Microwave losses of undoped n-type silicon and undoped 4H-SiC single crystals at cryogenic temperatures

    NASA Astrophysics Data System (ADS)

    Jung, Ho Sang; Yang, Woo Il; Cho, Man Soon; Joo, Kee Nam; Lee, Sang Young

    2014-05-01

    We investigated microwave losses of single-crystalline Si and 4H-SiC at cryogenic temperatures at 8.6-24 GHz using a method involving a dielectric resonator with high- T c superconductor YBa2Cu3O7- δ films used to improve the measurement sensitivity. The loss tangent of our undoped n-type Si appeared to be extremely low at temperatures below 20 K with a value of 1 × 10-6 at 24 GHz at 10 K, which is more than 100 times lower than the value of 2 × 10-4 at 6.8 GHz at 10 K reported by Krupka et al. [ IEEE Trans. Microw. Theory Tech. 54, 3995 (2006)] for undoped p-type Si. Meanwhile, the loss tangent of pristine 4H-SiC appeared to be very high with a value of 0.01 at 10 K at 8.6 GHz, which is 4000 times higher than that of our undoped Si. When the pristine 4H-SiC was irradiated with thermal neutrons, the loss tangent was enhanced by seven times due to the significantly reduced electrical resistivity. Our results show that, at temperatures below 20 K, the loss tangent of undoped n-type Si is low enough for various cryogenic applications and that thermal neutron irradiation could provide a useful means of reducing the electrical resistivity of SiC possibly by means of neutron transmutation doping.

  3. Al{sub 4}SiC{sub 4} wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

    SciTech Connect

    Pedesseau, L. E-mail: jacky.even@insa-rennes.fr; Even, J. E-mail: jacky.even@insa-rennes.fr; Durand, O.; Modreanu, M.; Chaussende, D.; Sarigiannidou, E.; Chaix-Pluchery, O.

    2015-12-01

    New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al{sub 4}SiC{sub 4}). A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al{sub 4}SiC{sub 4} material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al{sub 4}SiC{sub 4} material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.

  4. First principles study of crystal Si-doped Ge2Sb2Te5

    NASA Astrophysics Data System (ADS)

    Yan, Beibei; Yang, Fei; Chen, Tian; Wang, Minglei; Chang, Hong; Ke, Daoming; Dai, Yuehua

    2017-02-01

    Ge2Sb2Te5 (GST) and Si-doped GST with hexagonal structure were investigated by means of First-principles calcucations. We performed many kinds of doping types and studied the electronic properties of Si-doped GST with various Si concentrations. The theoretical calculations show that the lowest formation energy appeared when Si atoms substitute the Sb atoms (SiSb). With the increasing of Si concentrations from 10% to 30%, the impurity states arise around the Fermi level and the band gap of the SiSb structure broadens. Meanwhile, the doping supercell has the most favorable structure when the doping concentration keeps in 20%. The Si-doped GST exhibits p-type metallic characteristics more distinctly owing to the Fermi level moves toward the valence band. The Te p, d-orbitals electrons have greater impact on electronic properties than that of Te s-orbitals.

  5. High-pressure synthesis and crystal structure of silicon phosphate hydroxide, SiPO{sub 4}(OH)

    SciTech Connect

    Stearns, Linda A. . E-mail: linda.stearns@asu.edu; Groy, Thomas L.; Leinenweber, Kurt

    2005-09-15

    A new high-pressure phase, silicon phosphate hydroxide, was prepared at 8.3+/-0.5GPa and 1000 deg. C in >98% purity. From X-ray diffraction on a pseudo-merohedrally twinned crystal, it was found that SiPO{sub 4}(OH) crystallizes in a monoclinic cell with space group P2{sub 1}/n (No. 14), a=6.8446(11)A,b=6.8683(13)A,c=6.8446(11)A,{beta}=119.77(1){sup o}, and Z=4. The refinement gave a conventional R{sub obs} of 0.0320 and wR{sub obs} of 0.0864 for the overlapped data from both twin components. In the structure, SiO{sub 6} octahedra form chains along [101], with PO{sub 4} tetrahedra alternating along the chain in the b-direction. The parallel chains link up with tetrahedral corners from other chains to form a 3-dimensional network. SiPO{sub 4}(OH) belongs to a structural family that includes HgSeO{sub 4}.H{sub 2}O. It is also related to the SbOPO{sub 4} structure by a small distortion that lowers the symmetry from C2/c in SbOPO{sub 4} to P2{sub 1}/c(P2{sub 1}/n) in SiPO{sub 4}(OH)

  6. Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

    PubMed

    Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

    2016-10-05

    In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

  7. Magnetic measurements on single crystals of dysprosium trifluoromethanesulfonate nonahydrate; effects of crystal field perturbed energy levels

    NASA Astrophysics Data System (ADS)

    Neogy, D.; Paul, P.; Chattopadhyay, K. N.; Bisui, D.

    2002-07-01

    Magnetic susceptibility measurements on single crystals of dysprosium trifluoromethanesulfonate (DyTFMS) have been carried out from 300 K down to 13 K. The hexagonal crystal structure of DyTFMS renders the crystal uniaxial with the Kramers ion Dy 3+ occupying a site of C 3h symmetry. The principal magnetic susceptibilities, observed by us and the Friedberg group, over the wide range 300 to ˜1.0 K find an excellent theoretical simulation by the crystal field perturbed J-mixed eigenvectors with due consideration of the intermediate coupling effects. No ordering effects were noticed down to ˜13 K indicating the interionic interaction to be predominantly of the dipolar type which is consistent with the discovery of a ferromagnetic transition at T˜0.111 K by the Friedberg group. The g-values derived from other sources are reasonably accounted for. The thermal behavior of quadrupole splitting and that of electronic and nuclear heat capacities is also worked out.

  8. Measurement of the {2 2 0} lattice-plane spacing of a 28Si x-ray interferometer

    NASA Astrophysics Data System (ADS)

    Massa, E.; Mana, G.; Kuetgens, U.; Ferroglio, L.

    2011-04-01

    The spacing of the {2 2 0} lattice planes of a 28Si crystal, used to determine the Avogadro constant by counting silicon atoms, was measured by combined x-ray and optical interferometry to a relative accuracy of 3.5 × 10-9. The result is d2 2 0 = (192 014 712.67 ± 0.67) am, at 20.0 °C and 0 Pa. This value is greater by (1.9464 ± 0.0067) × 10-6d2 2 0 than the spacing in natural Si, a difference which confirms quantum-mechanics calculations. This result is a key step towards a realization of the mass unit based on a conventional value of the Planck or the Avogadro constant.

  9. Ca(Ti,Si)O3 Diamond Inclusions Crystallized From Carbonate Melts in the Transition Zone: Experimental Constraints

    NASA Astrophysics Data System (ADS)

    Armstrong, L. S.; Walter, M. J.; Keshav, S.; Bulanova, G.; Pickles, J.; Lord, O. T.; Lennie, A.

    2007-12-01

    Composite diamond inclusions consisting of coexisting endmember CaSiO3 and CaTiO3 are rare but occur in diamond populations from Juina, Brazil1-2. Phase relations show that above ~9 GPa (at 1500 K) a perovskite-structured solid solution exists between these endmembers, while at lower pressures intermediate compositions produce coexisting CaTiO3-perovskite and CaSiO3 in the walstromite structure3. Inclusions with `perovskite' stoichiometry are commonly interpreted as fragments of solid mantle from the transition zone or lower mantle4-6. Here we report on two composite diamond inclusions from Juina kimberlite, and can effectively eliminate a subsolidus origin on the basis of experimental mineral phase relations. Instead, based on new melting experiments we find that the inclusions most likely crystallized directly from Ca-rich carbonate melts. Like other workers1-2 we interpret the composite inclusions as exsolution products of a high-pressure Ca(Ti,Si)O3 perovskite stable in the transition zone. Our bulk inclusion compositions are estimated to contain 50- 65 mol% CaTiO3, and are remarkably low in MgSiO3 component at less than 0.2 mol%. Experiments have shown that in peridotite or eclogite lithologies, Ca-rich perovskite in equilibrium with an MgSiO3-phase (majorite or Mg-perovskite) have about 3 to 7 mol% MgSiO37-8. Here we report on new subsolidus laser-heated diamond anvil cell experiments at 20-50 GPa in the ternary system CaSiO3-CaTiO3-MgSiO3 that bracket the CaTi-rich limb of the solvus between Ca- and Mg-rich perovskites. All experiments were made at 2000 (±200) K for 45-75 min, and were analysed using synchrotron micro-focus X-ray diffraction. We find that the solubility of MgSiO3 in CaTi-perovskite solid solutions increases significantly with increasing CaTiO3 component. Thus, Ti-rich calcium perovskite in peridotite or eclogite lithologies should have very high, not exceptionally low, MgSiO3 component. Accordingly, a subsolidus paragenesis is unlikely for

  10. Fabrication of FCC-SiO{sub 2} colloidal crystals using the vertical convective self-assemble method

    SciTech Connect

    Castañeda-Uribe, O. A.; Salcedo-Reyes, J. C.; Méndez-Pinzón, H. A.; Pedroza-Rodríguez, A. M.

    2014-05-15

    In order to determine the optimal conditions for the growth of high-quality 250 nm-SiO{sub 2} colloidal crystals by the vertical convective self-assemble method, the Design of Experiments (DoE) methodology is applied. The influence of the evaporation temperature, the volume fraction, and the pH of the colloidal suspension is studied by means of an analysis of variance (ANOVA) in a 3{sup 3} factorial design. Characteristics of the stacking lattice of the resulting colloidal crystals are determined by scanning electron microscopy and angle-resolved transmittance spectroscopy. Quantitative results from the statistical test show that the temperature is the most critical factor influencing the quality of the colloidal crystal, obtaining highly ordered structures with FCC stacking lattice at a growth temperature of 40°C.

  11. Probing the dynamics of the interaction between few-cycle laser pulses and single crystal (100) Si and GaAs near the laser-induced damage threshold

    NASA Astrophysics Data System (ADS)

    Talisa, Noah; Werner, Kevin; Kafka, Kyle; Austin, Drake R.; Chowdhury, Enam

    2016-12-01

    The dynamics of the laser-solid interaction with high intensity ultra-short s-polarized few-cycle pulses (FCPs) (Ephoton 1.65 eV) and single crystals (100) Si and GaAs (Egap 1.14 and 1.4 eV, respectivly) near the multipulse laser-induced damage threshold (LIDT) were measured using a pump-probe reflectivity technique. FCP's with central wavelength 760 nm and FWHM duration 5 fs used as both pump and probe pulses were incident at 45°, and the reflectivity of each probe pulse was measured as the delay between the pump and probe pulses was varied with 0.1 fs resolution. Near zero delay, the probe pulse reflectivity displayed oscillatory behavior relative to the unexcited reflectivity for both materials, with a period equal to the optical cycle ( 2.6 fs). For Si, the crystal orientation was varied so that the field polarization was parallel to the (010) and (011) directions, and half way in between. Significantly larger zero delay oscillations were observed for the field polarization parallel to the (011) direction compared to those for the other two directions.

  12. Unique [(1)infinityNi(8)Bi(8)S] metallic wires in a novel quasi-1D compound. Synthesis, crystal and electronic structure, and properties of Ni(8)Bi(8)SI.

    PubMed

    Baranov, A I; Kloo, L; Olenev, A V; Popovkin, B A; Romanenko, A I; Shevelkov, A V

    2001-12-12

    A new quasi-one-dimensional compound Ni(8)Bi(8)SI has been synthesized and its crystal structure determined from single-crystal X-ray diffraction data. The structure of Ni(8)Bi(8)SI consists of [(1)infinityNi(8)Bi(8)S] columns separated by iodine atoms. Conductivity and magnetic susceptibility measurements (down to 4.2 K) show that Ni(8)Bi(8)SI is a one-dimensional metal and exhibits Pauli paramagnetic properties. These observations are in good agreement with the results from electronic structure calculations. An analysis of the chemical bonding employing difference electron charge density maps reveals strong multicenter Ni-Bi bonds and pair Ni-S interactions within the [(1)infinityNi(8)Bi(8)S] columns. Only electrostatic interactions are inferred between the columns and iodine atoms.

  13. Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

    NASA Astrophysics Data System (ADS)

    Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2016-10-01

    {100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

  14. Intrinsic carrier multiplication efficiency in bulk Si crystals evaluated by optical-pump/terahertz-probe spectroscopy

    SciTech Connect

    Yamashita, G.; Nagai, M. E-mail: ashida@mp.es.osaka-u.ac.jp; Ashida, M. E-mail: ashida@mp.es.osaka-u.ac.jp; Matsubara, E.; Kanemitsu, Y.

    2014-12-08

    We estimated the carrier multiplication efficiency in the most common solar-cell material, Si, by using optical-pump/terahertz-probe spectroscopy. Through close analysis of time-resolved data, we extracted the exact number of photoexcited carriers from the sheet carrier density 10 ps after photoexcitation, excluding the influences of spatial diffusion and surface recombination in the time domain. For incident photon energies greater than 4.0 eV, we observed enhanced internal quantum efficiency due to carrier multiplication. The evaluated value of internal quantum efficiency agrees well with the results of photocurrent measurements. This optical method allows us to estimate the carrier multiplication and surface recombination of carriers quantitatively, which are crucial for the design of the solar cells.

  15. Electron density distribution and disordered crystal structure of 15R-SiAlON, SiAl{sub 4}O{sub 2}N{sub 4}

    SciTech Connect

    Banno, Hiroki; Hanai, Takaaki; Asaka, Toru; Kimoto, Koji; Fukuda, Koichiro

    2014-03-15

    The crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} was characterized by laboratory X-ray powder diffraction (CuKα{sub 1}). The title compound is trigonal with space group R3-bar m. The hexagonal unit-cell dimensions (Z=3) are a=0.301332(3) nm, c=4.18616(4) nm and V=0.3291825(5) nm{sup 3}. The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of one of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=5.05%, S (=R{sub wp}/R{sub e})=1.21, R{sub p}=3.77%, R{sub B}=1.29% and R{sub F}=1.01%. The disordered crystal structure was successfully described by overlapping three types of domains with ordered atom arrangements. The distribution of atomic positions in one of the three types of domains can be achieved in the space group R3-bar m. The atom arrangements in the other two types of domains are noncentrosymmetrical with the space group R3m. These two structural configurations are related by the pseudo-symmetry inversion. -- Graphical abstract: A bird's eye view of electron densities up to 75.3% (0.133 nm{sup −3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of SiAl{sub 4}O{sub 2}N{sub 4}. Highlights: • Crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping three types of domains with ordered atom arrangements.

  16. Correlated Protein Motion Measurements of Dihydrofolate Reductase Crystals

    NASA Astrophysics Data System (ADS)

    Xu, Mengyang; Niessen, Katherine; Pace, James; Cody, Vivian; Markelz, Andrea

    2014-03-01

    We report the first direct measurements of the long range structural vibrational modes in dihydrofolate reductase (DHFR). DHFR is a universal housekeeping enzyme that catalyzes the reduction of 7,8-dihydrofolate to 5,6,7,8-tetra-hydrofolate, with the aid of coenzyme nicotinamide adenine dinucleotide phosphate (NADPH). This crucial enzymatic role as the target for anti-cancer [methotrexate (MTX)], and other clinically useful drugs, has made DHFR a long-standing target of enzymological studies. The terahertz (THz) frequency range (5-100 cm-1), corresponds to global correlated protein motions. In our lab we have developed Crystal Anisotropy Terahertz Microscopy (CATM), which directly measures these large scale intra-molecular protein vibrations, by removing the relaxational background of the solvent and residue side chain librational motions. We demonstrate narrowband features in the anisotropic absorbance for mouse DHFR with the ligand binding of NADPH and MTX single crystals as well as Escherichia coli DHFR with the ligand binding of NADPH and MTX single crystals. This work is supported by NSF grant MRI2 grant DBI2959989.

  17. A quartz crystal biosensor for measurement in liquids.

    PubMed

    Kösslinger, C; Drost, S; Aberl, F; Wolf, H; Koch, S; Woias, P

    1992-01-01

    The detection of anti-human immunodeficiency virus (HIV) antibodies by means of synthetic HIV peptide immobilized on a piezoelectric quartz sensor is demonstrated. The measurement set-up consists of an oscillator circuit, a suitably modified AT-cut thickness-shear-mode quartz crystal with gold electrodes, which is housed in a special reaction vessel, and a computer-controlled frequency counter for the registration of the measured frequency values. The quartz crystal is adapted for a steady operation in liquids at a frequency of 20 MHz. In phosphate-buffered saline solution the oscillator reaches a stability of about 0.5 Hz within a few seconds, of about 2 Hz within 10 min and about 30 Hz within 1 h. The frequency shift due to the adsorption of various proteins to the uncoated sensor surface has been investigated. It can be shown that a stable adsorptive binding of proteins to an oscillating gold surface is feasible and can be used for the immobilization of a receptor layer (e.g. HIV peptide). Specific binding of the anti-HIV monoclonal antibody to the HIV peptide immobilized on the quartz sensor is demonstrated. Control experiments show, however, additional unspecific binding. According to the experiments, the Sauerbrey formula gives a sufficiently accurate value for the decrease of the resonant frequency due to adsorption or binding of macromolecular proteins on the quartz crystal surface.

  18. The systems Sr-Zn-{l_brace}Si,Ge{r_brace}: Phase equilibria and crystal structure of ternary phases

    SciTech Connect

    Romaka, V.V.; Falmbigl, M.; Grytsiv, A.; Rogl, P.

    2012-02-15

    Phase relations have been established by electron probe microanalysis (EPMA) and X-ray powder diffraction (XPD) for the Sr-poor part of the ternary systems Sr-Zn-Si at 800 Degree-Sign C and Sr-Zn-Ge at 700 Degree-Sign C. In the Sr-Zn-Si system one new ternary compound SrZn{sub 2+x}Si{sub 2-x} (0{<=}x{<=}0.45) with CeAl{sub 2}Ga{sub 2} structure and a statistical mixture of Zn/Si in the 4e site was found. Neither a type-I nor a type-IX clathrate phase was encountered. This system is characterized by formation of two further phases, i.e. SrZn{sub 1-x}Si{sub 1+x} with ZrBeSi-type (0.16{<=}x{<=}0.22) and SrZn{sub 1-x}Si{sub 1+x} with AlB{sub 2}-type (0.35{<=}x{<=}0.65) with a random distribution of Zn/Si atoms in the 2c site. For the Sr-Zn-Ge system, the homogeneity regions of the isotypic phases SrZn{sub 1-x}Ge{sub 1+x} with ZrBeSi-type (0{<=}x{<=}0.17) and AlB{sub 2}-type (0.32{<=}x{<=}0.56), respectively, have been determined. Whereas the germanide SrZn{sub 2+x}Ge{sub 2-x} (CeAl{sub 2}Ga{sub 2}-type) is characterized by a homogeneity region (0{<=}x{<=}0.5), the clathrate type-I phase Sr{sub 8}Zn{sub 8}Ge{sub 38} shows a point composition. - Graphical abstract: Phase equilibria of ternary compounds in the Sr-Zn-Si-system at 800 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Phase equilibria in the Sr-Zn-Si-system are established at 800 Degree-Sign C. Black-Right-Pointing-Pointer Phase equilibria in the Sr-Zn-Ge-system are established at 700 Degree-Sign C. Black-Right-Pointing-Pointer Crystal structures of the ternary compounds were confirmed by X-ray powder diffraction. Black-Right-Pointing-Pointer All ternary compounds except the clathrate-I in the Ge-system are characterized by a homogeneity region.

  19. Measurement of probability distributions for internal stresses in dislocated crystals

    SciTech Connect

    Wilkinson, Angus J.; Tarleton, Edmund; Vilalta-Clemente, Arantxa; Collins, David M.; Jiang, Jun; Britton, T. Benjamin

    2014-11-03

    Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called “restricted second moment of the probability distribution” can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.

  20. Energy loss distributions of 7 TeV protons axially channeled in the bent <1 1 0> Si crystal

    NASA Astrophysics Data System (ADS)

    Stojanov, Nace; Petrović, Srdjan

    2016-04-01

    In this article, the energy loss distributions of relativistic protons axially channeled in the bent <1 1 0> Si crystal are studied. The crystal thickness is equal to 1 mm, which corresponds to the reduced crystal thickness, Λ, equal to 1.22, whereas the bending angle, α, was varied from 0 to 30 μrad. The proton energy of 7 TeV was chosen in accordance with the concept of using the bent crystals as a tool for selective deflection of the beam halo particles from the LUA9 experiment at LHC. For the continuum interaction potential of the proton and the crystal the Molière's expression was used and the energy loss of a proton was calculated by applying the trajectory dependent stopping power model. Further, the uncertainness of the scattering angle of the proton caused by its collisions with the electrons of the crystal and the divergence of the proton beam were taken into account. The energy loss distribution of the channeled protons was obtained via the numerical solution of the proton equations of motion in the transverse plane and the computer simulation method. The analysis of the obtained theoretical data shows that the shape of the energy loss distribution strongly depends on the horizontal or vertical direction of the curvature of the crystal. The number of dechanneled protons as a function of the bending angle also strongly depends on the direction of the crystal's curvature. As a result, the dechanneling rates and ranges, obtained from the Gompertz type sigmoidal fitting functions, have different sets of values for different bending orientations. We have also studied the influence of the proton beam divergence on the energy loss distribution of channeled protons.

  1. Crystal structure and electronic properties of the new compounds U{sub 3}Co{sub 12-x}X{sub 4} with X=Si, Ge

    SciTech Connect

    Soude, A.; Tougait, O.; Pasturel, M.; Kaczorowski, D.; Noel, H.

    2010-05-15

    The new compounds U{sub 3}Co{sub 12-x}X{sub 4} with X=Si, Ge were prepared by direct solidification of the corresponding liquid phase, followed by subsequent annealing at 1173 K. Single crystal X-ray diffraction carried out at room temperature showed that they crystallize with the hexagonal space group P6{sub 3}/mmc (no.194) and the unit-cell parameters a=8.130(5), c=8.537(5) A and a=8.256(1), c=8.608(1) A for the silicide and germanide, respectively. Their crystal structure derives from the EuMg{sub 5.2} structure type, and is closely related to the Sc{sub 3}Ni{sub 11}Si{sub 4} and Gd{sub 3}Ru{sub 4-x}Al{sub 12+x} types. For the present compounds, no substitution mechanisms have been observed, the partial occupancy of one Co site results from the presence of vacancies, only. The homogeneity ranges, evaluated by energy dispersive spectroscopy analysis, extend from x=0.0(2) to 0.3(2) and from x=0.0(2) to 1.0(2) for U{sub 3}Co{sub 12-x}Si{sub 4} and U{sub 3}Co{sub 12-x}Ge{sub 4}, respectively. The electronic properties of both compounds were investigated by means of DC magnetic susceptibility and DC electrical resistivity measurements. The U{sub 3}Co{sub 12-x}X{sub 4} compounds are both Pauli paramagnets with their electrical resistivity best described as poor metallic or dirty metallic behavior. - Graphical abstract: The crystal structure of the new compounds U{sub 3}Co{sub 12-x}X{sub 4}, X=Si, Ge is a ternary ordered variant of the EuMg{sub 5.2}-type with a site preference for the 4e position.

  2. Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory.

    PubMed

    Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-Ichi; Bowler, David R; Miki, Kazushi

    2017-04-20

    We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from [Formula: see text] to [Formula: see text] Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.

  3. Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory

    NASA Astrophysics Data System (ADS)

    Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-ichi; Bowler, David R.; Miki, Kazushi

    2017-04-01

    We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi–Si bond length from 2.79+/- 0.01~{\\mathring{\\text{A}}} to 2.63+/- 0.02 Å. We infer that following epitaxial growth the Bi–Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi–Si bond lengths.

  4. Analysis of grain structure evolution based on optical measurements of mc Si wafers

    NASA Astrophysics Data System (ADS)

    Strauch, Theresa; Demant, Matthias; Krenckel, Patricia; Riepe, Stephan; Rein, Stefan

    2016-11-01

    Grain structure and grain competition have a strong impact on bulk lifetime in multicrystalline (mc) silicon. A fast and thorough characterization of grain structure is crucial in order to improve industrial crystal growth. This work introduces key parameters of grain structure, extracted with a newly developed image processing tool. Four bricks grown with different concepts were chosen to investigate the value of the identified key parameters and to identify characteristic developments along the brick. Optical measurements on as-cut wafers from these bricks serve as a basis to extract grain structure properties, i.e., size, shape, homogeneity and distribution of grain size. By connecting the 2D-information over brick height, a statistical insight into the entire brick is gained. Weighted percentiles of grain area offer a robust measure to characterize grain size distribution. As twinning has a large impact on grain competition, twinned grains are detected via grain shape. Additionally, regions with strong grain competition are highlighted for investigations on grain overgrowth. It is found that the share of twin grains increases with brick height in high-performance mc (HPM) silicon with fine-granular seeds from almost zero up to about 15% whereas it remains rather constant over the whole brick height in standard mc-Si. The results of the investigated bricks show clearly that towards the brick top, the material differences in grain size decrease. This suggests that an energetically favorable state may exist for grain structure development.

  5. Ion beam damage assessment and waveguide formation induced by energetic Si-ion irradiation in lanthanum aluminate crystal

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Huang, Q.; Crespillo, M. L.; Qiao, M.; Liu, P.; Wang, X. L.

    2017-02-01

    Lanthanum aluminate (LaAlO3) crystal has emerged as one of the most valuable functional-materials, and its physical, electronic and optical properties strongly depend on the crystal structure, which can be easily altered in an irradiation environment and therefore affect the performance of LaAlO3-based devices. On the other hand, the preparation of LaAlO3 waveguide is also a scientific challenge for its potential application prospects in optoelectronics field. In this work, the damage evolution behavior of LaAlO3 crystal under Si-ion irradiation has been discussed in detail utilizing complementary characterization techniques, and then, single-mode waveguide of LaAlO3 crystal in the visible band can be obtained based on ion-irradiation-induced lattice damage behavior. Waveguide optical-coupling techniques are used to show its competitive features. Thus, novel optical waveguides with optimized features in LaAlO3 crystals can be tailored by a proper selection of ion mass, energy and fluence using the modification of the target material during ion irradiation process.

  6. Electron escape depth variation in thin SiO2 films measured with variable photon energy

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.; Grunthaner, F. J.; Pianetta, P.; Johansson, L. I.; Lindau, I.

    1984-01-01

    A double crystal monochromator at the Stanford Synchrotron Radiation Laboratory is used to study the Si/SiO2 interface, using photon energies of hv = 1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 A thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). These differences are attributed to a strained oxide layer near the interface.

  7. Iron and Nickel Isotope Measurements on SiC X Grains with CHILI

    NASA Astrophysics Data System (ADS)

    Kodolányi, J.; Stephan, T.; Trappitsch, R.; Hoppe, P.; Pignatari, M.; Davis, A. M.; Pellin, M. J.

    2016-08-01

    New measurements with CHILI on SiC X grains provide more detailed Fe and Ni isotope data than previous NanoSIMS analyses. The new data suggest that Fe-Ni fractionation may occur in supernova ejecta before SiC condensation.

  8. Crystal structure of Na2HfSi2O7 by Rietveld refinement.

    PubMed

    Massoni, Nicolas; Chevreux, Pierrick

    2016-10-01

    The structure of triclinic disodium hafnium disilicate, Na2HfSi2O7, has been determined by laboratory powder X-ray diffraction and refined by the Rietveld refinement. The structure is a framework made of alternate layers of HfO6 octa-hedra and SiO4 tetra-hedra linked by common O atoms. Sodium atoms are located in the voids of the framework, aligned into tunnels along the [010] direction. Na2HfSi2O7 is isostructural with the parakeldyshite Na2ZrSi2O7 phase.

  9. Crystal structure of Na2HfSi2O7 by Rietveld refinement

    PubMed Central

    Massoni, Nicolas; Chevreux, Pierrick

    2016-01-01

    The structure of triclinic disodium hafnium disilicate, Na2HfSi2O7, has been determined by laboratory powder X-ray diffraction and refined by the Rietveld refinement. The structure is a framework made of alternate layers of HfO6 octa­hedra and SiO4 tetra­hedra linked by common O atoms. Sodium atoms are located in the voids of the framework, aligned into tunnels along the [010] direction. Na2HfSi2O7 is isostructural with the parakeldyshite Na2ZrSi2O7 phase. PMID:27746936

  10. Evaporation kinetics of Mg2SiO4 crystals and melts from molecular dynamics simulations

    NASA Technical Reports Server (NTRS)

    Kubicki, J. D.; Stolper, E. M.

    1993-01-01

    Computer simulations based on the molecular dynamics (MD) technique were used to study the mechanisms and kinetics of free evaporation from crystalline and molten forsterite (i.e., Mg2SiO4) on an atomic level. The interatomic potential employed for these simulations reproduces the energetics of bonding in forsterite and in gas-phase MgO and SiO2 reasonably accurately. Results of the simulation include predicted evaporation rates, diffusion rates, and reaction mechanisms for Mg2SiO4(s or l) yields 2Mg(g) + 20(g) + SiO2(g).

  11. High resolution grazing-incidence in-plane x-ray diffraction for measuring the strain of a Si thin layer.

    PubMed

    Omote, Kazuhiko

    2010-12-01

    We have measured the strain of a thin Si layer deposited on a SiGe layer using a high resolution x-ray diffraction system. The Si layer was deposited on the SiGe layer in order to introduce a tensile strain to the Si layer. To measure the in-plane lattice constant accurately, we have employed so-called grazing-incidence in-plane diffraction. For this measurement, we have made a new five-axis x-ray goniometer which has four ordinal circles (ω, 2θ, χ, φ) plus a counter-χ-axis for selecting the exit angle of the diffracted x-rays. In grazing-incidence geometry, an incident x-ray is focused on the sample surface in order to obtain good diffraction intensity even though the layer thickness is less than 5 nm. Because diffracted x-rays are detected through analyzer crystals, the diffraction angle can be determined with an accuracy of ± 0.0003°. This indicates that the strain sensitivity is about 10( - 5) when we measure in-plane Si 220 diffraction. Use of x-ray diffraction could be the best standard metrology method for determining strain in thin layers. Furthermore, we have demonstrated that incident/exit angle selected in-plane diffraction is very useful for height/depth selective strain determination.

  12. On the Synthesis and Characterization of Novel Aluminum-Arsenic Compounds; Crystal Structure of Et2AlAs(SiMe3)22

    DTIC Science & Technology

    1991-10-03

    ARSENIC COMPOUNDS; CRYSTAL STRUCTURE OF [Et2AIAs(SiMe 3 )2 ]2 12 PERSONAL AUTHOR(S) :ells, A.T. McPhail, and T. M. Speer 13a. ’YPE OF REPORT 13b. riME...synthesis, crystal structure , ring compound 19 ABSTRACT (Continue on reverse ir necessary &nd iaenrtiy by 6lOCK numOer) See attached. 91-12706 ITu 20...DU/DC/TR-24 ON THE SYNTHESIS AND CHARACTERIZATION OF NOVEL ALUMINUM-ARSENIC COMPOUNDS- CRYSTAL STRUCTURE OF [Et 2 A1As(SiMe 3)21 2 by R. L. Wells, A. T

  13. Synthesis of green emitting and transparent zn2siO4:mn2+ thin film phosphors on 2D photonic crystal patterned quartz substrates.

    PubMed

    Kim, Donghyuk; Han, Ji Yeon; Jeon, Duk Young

    2012-02-01

    Zn2SiO4:Mn2+ thin film phosphors (TFPs) have been synthesized by RF magnetron sputtering, using a single multicomponent stoichiometric target. And 2D photonic crystal patterns were introduced on a quartz substrate to enhance the light extraction efficiency. In order to introduce 2D photonic crystal patterns on a quartz substrate, nanosphere lithography was used. Polystyrene spheres, with diameter of 330 nm, were transferred on the quartz substrate and subsequently were served as an etch mask. Quartz substrates were patterned by CF4 gas-based reactive ion etching. Zn2SiO4:Mn2+ were deposited on that 2D photonic crystal patterned quartz substrate and the effect of height of photonic crystal layers were investigated. The light extraction efficiency of Zn2SiO4:Mn2+ thin film phosphors deposited on the photonic crystal patterned quartz substrate was enhanced three times to compared with that of flat Zn2SiO4:Mn2+ thin film phosphors due to the Bragg diffraction and leaky mode caused by PCLs. Transmittance of Zn2SiO4:Mn2+ TFPs deposited on the photonic crystal patterned substrate was high enough, above 70% in the visible light region with respect to that of quartz substrate.

  14. Time-Domain Thermoreflectance Measurements of Thermal Transport in Amorphous SiC Thin Films

    NASA Astrophysics Data System (ADS)

    Daly, Brian; Hondongwa, Donald; King, Sean

    2010-03-01

    We present ultrafast optical pump-probe measurements of thermal transport in a series of amorphous SiC samples. The samples were grown on Si wafers by plasma enhanced chemical vapor deposition utilizing various combinations of methylsilanes and H2 and He diluent gases. The sample films were well characterized and found to have densities (1.3 -- 2.3 g cm-3) and dielectric constants (4.0 -- 7.2) that spanned a wide range of values. Prior to their measurement, the samples were coated with 40-70 nm of polycrystalline Al. The pump-probe measurements were performed at room temperature using a modelocked Ti:sapphire laser that produced sub-picosecond pulses of a few nJ. The pulses heat the Al coating, causing a transient reflectivity change. As the Al film cools into the SiC film, the reflectivity change can be measured, giving a measure of the thermal effusivity of the SiC film. We then extract values for the thermal conductivity of the SiC films and find that it varies from less than half of the thermal conductivity of amorphous SiO2 for the lower density materials to somewhat larger than amorphous SiO2 for the highest density films.

  15. Si1-xGex crystal growth by the floating zone method starting from SPS sintered feed rods - A segregation study

    NASA Astrophysics Data System (ADS)

    Wagner, A. C.; Cröll, A.; Hillebrecht, H.

    2016-08-01

    The availability of suitable feed rods for Si-Ge bulk crystal growth is known to be a limiting factor in floating zone growth and other growth techniques. In this work, three Si-rich SiGe single crystals were crystallized by an optical floating zone technique in a double ellipsoid mirror furnace. The feed rods were prepared by pre-synthesis in the Spark Plasma Sintering (SPS) process starting with powders of different compositions. In a detailed section the preparation method of consolidation by mechanical alloyed powders to feed rods will be given. Results from two growth experiments starting with uniform compositions with 11 at% and 20 at% germanium as well as a zone leveling experiment with a segmented feed rod consisting of a starting zone with 32 at% Ge will be discussed. The latter experiment resulted in a crystal with nearly no axial segregation.

  16. Kondo lattice and antiferromagnetic behavior in quaternary CeTAl4Si2 (T = Rh, Ir) single crystals

    DOE PAGES

    Maurya, Arvind; Kulkarni, Ruta; Thamizhavel, Arumugam; ...

    2016-02-26

    Here, we have explored in detail the anisotropic magnetic properties of CeRhAl4Si2 and CeIrAl4Si2, which undergo two antiferromagnetic transitions, at TN1 = 12.6 and 15.5 K, followed by a second transition at TN2 = 9.4 and 13.8 K, respectively, with the [001]-axis as the relatively easy axis of magnetization. The electrical resistivity at ambient and applied pressure provides evidence of Kondo interaction in both compounds, further supported by a reduced value of the entropy associated with the magnetic ordering. The Sommerfeld coefficient γ is inferred to be 195.6 and 49.4 mJ/(mol K2) for CeRhAl4Si2 and CeIrAl4Si2, respectively, classifying these materialsmore » as moderate heavy-fermion compounds. The crystal electric field energy levels are derived from the peak seen in the Schottky heat capacity. Furthermore, we have also performed electronic structure calculations by using the local spin density approximation + U [LSDA+U] approach, which provide physical insights on the observed magnetic behavior of these two compounds.« less

  17. Crystal structure of Li 3ABO 5 ( A = Al,Ga; B = Si,Ge): A novel wurtzite superstructure

    NASA Astrophysics Data System (ADS)

    Skakle, J. M. S.; Fletcher, J. G.; Howie, R. A.; Lee, C. K.; West, A. R.

    1992-05-01

    The crystal data for lithium aluminogermanate, Li 3AlGeO 5, are Mr 200.386, orthorhombic, P2 1nb, a = 4.881(1), b = 5.404(3), and c = 15.841(7)Å, V = 417.9Å 3, Z = 4, Dx = 3.184 g cm -3, λ(Mo Kα) = 0.71069Å, F(000) = 376.0, T = 298 K, R = 0.043, and Rw = 0.045 for 553 independent reflections. The structure consists of hexagonal close-packed oxide ions with cations ordered over one set of tetrahedral sites. It may also be described as a cristobalite-like sheet structure. The phases Li 3AlSiO 5, Li 3GaSiO 5, and Li 3GaGeO 5 are isostructural, as confirmed by Rietveld refinement.

  18. Laboratory measurement of optical constants of solid SiO and application to circumstellar dust

    NASA Astrophysics Data System (ADS)

    Wetzel, S.; Klevenz, M.; Gail, H.-P.; Pucci, A.; Trieloff, M.

    2013-05-01

    Context. Silicate minerals belong to the most abundant solids that form in cosmic environments. Their formation requires that a sufficient number of oxygen atoms per silicon atom are freely available. For the standard cosmic element mixture this can usually be taken for granted, but it becomes a problem at the transition from the oxygen-rich chemistry of M-stars to the carbon-rich chemistry of C-stars. In the intermediate type S-stars, most of the oxygen and carbon is consumed by formation of CO and SiO molecules, and left-over oxygen to build SiO4-tetrahedrons in solids becomes scarce. Under such conditions SiO molecules from the gas phase may condense into solid SiO. The infrared absorption spectrum of solid SiO differs from that of normal silicates by the absence of Si-O-Si bending modes around 18 μm whereas the absorption band due to Si-O bond stretching modes at about 10 μm is present. Observations show that exactly this particular characteristic can be found in some S-star spectra. Aims: We demonstrate that this observation may be explained by the formation of solid SiO as a major dust component at C/O abundance ratios close to unity. Methods: The infrared absorption properties of solid SiO are determined by laboratory transmission measurements of thin films of SiO produced by vapour deposition on a Si(111) wafer in the range between 100 cm-1 and 5000 cm-1 (2 μm and 100 μm). From the measured spectra the dielectric function of SiO is derived by using a Brendel-oscillator model, particularly suited to the representation of optical properties of amorphous materials. The results are used in model calculations of radiative transfer in circumstellar dust shells with solid SiO dust in order to determine the spectral features due to SiO dust. Results: Comparison of synthetic and observed spectra shows that reasonable agreement is obtained between the main spectral characteristics of emission bands due to solid silicon monoxide and an emission band centred on 10

  19. BaAl4 derivative phases in the sections {La,Ce}Ni2Si2-{La,Ce}Zn2Si2: phase relations, crystal structures and physical properties.

    PubMed

    Failamani, Fainan; Malik, Zahida; Salamakha, Leonid; Kneidinger, Friedrich; Grytsiv, Andriy; Michor, Herwig; Bauer, Ernst; Giester, Gerald; Rogl, Peter

    2016-03-28

    Phase relations and crystal structures have been evaluated within the sections LaNi2Si2-LaZn2Si2 and CeNi2Si2-CeZn2Si2 at 800 °C using electron microprobe analysis and X-ray powder and single crystal structure analyses. Although the systems La-Zn-Si and Ce-Zn-Si at 800 °C do not reveal compounds such as "LaZn2Si2" or "CeZn2Si2", solid solutions {La,Ce}(Ni1-xZnx)2Si2 exist with the Ni/Zn substitution starting from {La,Ce}Ni2Si2 (ThCr2Si2-type; I4/mmm) up to x = 0.18 for Ce(Ni1-xZnx)2Si2 and x = 0.125 for La(Ni1-xZnx)2Si2. For higher Zn-contents 0.25 ≤ x ≤ 0.55 the solutions adopt the CaBe2Ge2-type (P4/nmm). The investigations are backed by single crystal X-ray diffraction data for Ce(Ni0.61Zn0.39)2Si2 (P4/nmm; a = 0.41022(1) nm, c = 0.98146(4) nm; RF = 0.012) and by Rietveld refinement for La(Ni0.56Zn0.44)2Si2 (P4/nmm; a = 0.41680(6) nm, c = 0.99364(4) nm; RF = 0.043). Interestingly, the Ce-Zn-Si system contains a ternary phase CeZn2(Si1-xZnx)2 of the ThCr2Si2 structure type (0.25 ≤ x ≤ 0.30 at 600 °C), which forms peritectically at T = 695 °C but does not include the composition "CeZn2Si2". The primitive high temperature tetragonal phase with the CaBe2Ge2-type has also been observed for the first time in the Ce-Ni-Si system at CeNi2+xSi2-x, x = 0.33 (single crystal data, P4/nmm; a = 0.40150(2) nm, c = 0.95210(2) nm; RF = 0.0163). Physical properties (from 400 mK to 300 K) including specific heat, electrical resistivity and magnetic susceptibility have been elucidated for Ce(Ni0.61Zn0.39)2Si2 and La(Ni0.56Zn0.44)2Si2. Ce(Ni0.61Zn0.39)2Si2 exhibits a Kondo-type ground state. Low temperature specific heat data of La(Ni0.56Zn0.44)2Si2 suggest a spin fluctuation scenario with an enhanced value of the Sommerfeld constant.

  20. Passively mode-locked femtosecond laser with an Nd-doped La₃Ga₅SiO₁₄ disordered crystal.

    PubMed

    Liu, Jiaxing; Wang, Zhaohua; He, Kunna; Wei, Long; Zhang, Zhiguo; Wei, Zhiyi; Yu, Haohai; Zhang, Huaijin; Wang, Jiyang

    2014-11-03

    We experimentally prove the broad emission band of Nd:LGS disordered crystal and demonstrate a diode-pumped passively mode-locked femtosecond Nd-doped La₃Ga₅SiO₁₄ (Nd:LGS) laser for the first time. With a birefringent filter inserted into the cavity, the tunable continuous wave (CW) laser of over 60 nm from 1045.2 nm to 1105.3 nm is achieved, which is the widest tuning range with Nd-doped crystals to our knowledge. Further in mode-locked operation, femtosecond pulses with pulse duration of 381 fs, average output power of 75 mW and repetition rate of 134.4 MHz are obtained at the central wavelength of 1066 nm. It is suitable to be a compact seed for femtosecond laser amplifiers.

  1. Simple and quick enhancement of SiC bulk crystal growth using a newly developed crucible material

    NASA Astrophysics Data System (ADS)

    Nakamura, Daisuke

    2016-05-01

    Newly developed highly reliable low-cost TaC-coated graphite materials prepared by a wet ceramic process were applied to SiC sublimation growth. We demonstrated an increased long-duration growth rate and a resultant increase in crystal size by a factor of ∼1.2 (experimental value) after 24 h of growth [and ∼1.5 (extrapolated value) after the optimum duration of 53.1 h] by simply and quickly replacing graphite crucibles with TaC-coated graphite crucibles. Growth with the TaC-coated graphite crucibles reduced source gas leakage and increased the material yield for single crystals because the TaC layers were gas-tight and had a low emissivity.

  2. Thermochromic liquid crystal temperature measurements through a borescope imaging system

    NASA Astrophysics Data System (ADS)

    Kodzwa, Paul M.; Elkins, Christopher J.; Mukerji, Debjit; Eaton, John K.

    2007-10-01

    Thermochromic liquid crystals (TLCs) have proven to be a valuable tool for the collection of full-field, high-resolution heat transfer data. This paper presents an extension of previously developed calibration techniques to a simplified transonic linear cascade for a highly cambered turbine blade geometry. This required the introduction of miniature periscopes to image the measurement surfaces. The procedures and equipment used to ensure high-accuracy wide-band TLC measurements are presented. These included a geometry-matched calibration device, mechanisms to accurately position the borescope imaging optics, an algorithm to automatically divide the imaging region into a large number of calibration subregions (termed as cells), and algorithms to correct for geometric and optical image distortions. The cell calibration approach is shown to halve calibration times and dramatically reduce memory requirements when compared to a pixel-by-pixel calibration. The results of an extensive validation study are presented.

  3. Quartz crystal microbalance and photoacoustic measurements in dental photocuring

    NASA Astrophysics Data System (ADS)

    Lima, Marcenilda A.; Bastos, Ivan N.; Cella, Norberto

    2016-09-01

    Photocured dental resins are used extensively in restorative procedures in dentistry. Inadequate curing reduces the lifetime of the dental restoration, and consequently it is essential to precisely measure the polymerisation kinetics. In this study, two techniques, Quartz Crystal Microbalance (QCM) and Photoacoustic Spectroscopy (PAS), were used to monitor the real-time cure and to obtain the optical absorption spectra of resins, respectively. From the PAS measurements, the precise peaks of absorption were identified, and were used as the appropriate wavelength of the photocuring light in the QCM monitoring. The combined use of these techniques allows reliable determination of the duration of the phases of physical and chemical changes that occur during photocuring. Two commercial dental resins were tested, and the results confirmed the advantages of using PAS and QCM to study polymerisation kinetics.

  4. Measurement of gas viscosity using photonic crystal fiber

    NASA Astrophysics Data System (ADS)

    Gao, R.-K.; Sheehe, S. L.; Kurtz, J.; O'Byrne, S.

    2016-11-01

    A new measurement technique for gas viscosity coefficient is designed and demonstrated using the technique of tunable diode laser absorption spectroscopy (TDLAS). Gas flow is driven by a pressure gradient between two gas cells, through a photonic crystal fiber (PCF) surrounded by a furnace for temperature adjustment. PCF with 20-micron diameter affords physical space for gas-light interaction and provides a basis for gas viscosity measurement by determining the time for flow to exit a capillary tube under the influence of a pressure gradient. Infrared radiation from a diode laser is coupled into the fiber to be guided through the gas, and the light attenuation due to absorption from the molecular absorbing species is measured by a photo detector placed at the exit of the fiber. A numerical model from Sharipov and Graur describing local number density distribution in a unsteady state is applied for the determination of gas viscosity, based on the number density of gas measured by the absorption of the laser light, using the Beer-Lambert law. The measurement system is confirmed by measuring the viscosity of CO2 as a reference gas.

  5. Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate

    NASA Astrophysics Data System (ADS)

    Iqbal, A.; Walker, G.; Iacopi, A.; Mohd-Yasin, F.

    2016-04-01

    Aluminum Nitride (AlN) thin films are successfully deposited on epitaxial 3C-SiC-on-Si (100) substrates using DC magnetron sputterer. The sputtered films are characterized on the following parameters: crystal orientations (Siemens D500 X-Ray diffraction tool), deposition rate (Nanospec AFT 180), surface roughness (Park NX20 Atomic Force Microscopy), refractive index (Rudolph AutoEL IV Ellipsometer), in-plane stress (Tencor Flexus 2320 System) and Raman Spectra (Rennishaw InVia Spectrometer). XRD results demonstrate that the orientation of the AlN thin films can be changed from (002) to (101) by increasing the Nitrogen to Argon ratio from 40% to 80% at the total gas flow of 50 sccm. We are also able to tune the in-plane stress via RF biasing on the substrate. Both controlling abilities enable the applications of these thin films for low cost longitudinal piezoelectric devices and a quasi-shear mode devices using (002) and (101) orientations, respectively.

  6. Si1- x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

    NASA Astrophysics Data System (ADS)

    Morris, R. J. H.; Hase, T. P. A.; Sanchez, A. M.; Rowlands, G.

    2016-10-01

    The utility of energy sequencing for extracting an accurate matrix level interface profile using ultra-low energy SIMS (uleSIMS) is reported. Normally incident O2 + over an energy range of 0.25-2.5 keV were used to probe the interface between Si0.73Ge0.27/Si, which was also studied using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). All the SIMS profiles were linearized by taking the well understood matrix effects on ion yield and erosion rate into account. A method based on simultaneous fitting of the SIMS profiles measured at different energies is presented, which allows the intrinsic sample profile to be determined to sub-nanometer precision. Excellent agreement was found between the directly imaged HAADF-STEM interface and that derived from SIMS.

  7. Growth conditions, structure, Raman characterization and optical properties of Sm-doped (LuxGd1-x)2SiO5 single crystals grown by the Czochralski method

    NASA Astrophysics Data System (ADS)

    GŁowacki, MichaŁ; Dominiak-Dzik, Grażyna; Ryba-Romanowski, Witold; Lisiecki, RadosŁaw; Strzęp, Adam; Runka, Tomasz; Drozdowski, MirosŁaw; Domukhovski, Viktor; Diduszko, Ryszard; Berkowski, Marek

    2012-02-01

    The (LuxGd0.995-xSm0.005)2SiO5 single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm3+ ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu3+ content in (LuxGd0.995-xSm0.005)2SiO5 solid solution crystals induces the phase transition from C2/c (Lu2SiO5) to P21/c (Gd2SiO5) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15

  8. Achieving a table-like magnetocaloric effect and large refrigerant capacity in in situ multiphase Gd65Mn25Si10 alloys obtained by crystallization treatment

    NASA Astrophysics Data System (ADS)

    Shen, X. Y.; Zhong, X. C.; Huang, X. W.; Mo, H. Y.; Feng, X. L.; Liu, Z. W.; Jiao, D. L.

    2017-01-01

    In situ multiphase structure Gd65Mn25Si10 alloys were fabricated by melt spinning and subsequent crystallization treatment. In the process of crystallization, the α-Gd, GdMn2 and Gd5Si3 phases precipitate in the amorphous matrix in turn. The Curie temperature (T C) values for the α-Gd crystallization phase and amorphous matrix can be tailored by tuning the crystallization treatment time. All three multiphase alloys obtained by crystallization treatment at 637 K for 20, 30 and 40 min, respectively, undergo multiple successive magnetic phase transitions. A table-like magnetic entropy change over a wide temperature range (~90-120 K) and a large full width at half maximum (ΔT FWHM) magnetic entropy change (~230 K) were achieved in the above-mentioned crystallized alloys, resulting in large refrigerant capacities (RCs). The enhanced RCs of the three crystallized alloys for a magnetic field change of 0-5 T are in the range of 541-614 J kg-1. Large ΔT FWHM and RC values and a table-like (-ΔS M)max feature obtained in in situ multiphase Gd65Mn25Si10 crystallized alloys make them suitable for potential application in efficient Ericsson-cycle magnetic refrigeration working in a temperature range from 74 to 310 K.

  9. Crystallization from high temperature solutions of Si in Cu/Al solvent

    DOEpatents

    Ciszek, Theodore F.; Wang, Tihu

    1996-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  10. Crystallization from high temperature solutions of Si in Cu/Al solvent

    DOEpatents

    Ciszek, T.F.; Wang, T.

    1996-08-13

    A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.

  11. Two isostructural layered oxohalide compounds containing Mn{sup 2+}, Te{sup 4+} and Si{sup 4+}; crystal structure and magnetic susceptibility

    SciTech Connect

    Zimmermann, Iwan; Kremer, Reinhard K.; Johnsson, Mats

    2014-10-15

    The new compounds Mn{sub 4}(TeO{sub 3})(SiO{sub 4})X{sub 2} (X=Br, Cl) were synthesized by solid state reactions in sealed evacuated silica tubes. The compounds crystallize in the monoclinic space group P2{sub 1}/m with the unit cell parameters a=5.5463(3) Å (5.49434(7) Å), b=6.4893(4) Å (6.44184(9) Å), c=12.8709(7) Å (12.60451(18) Å), β=93.559(5)° (94.1590(12)°) and Z=2 for the respective Br and Cl analogues. Manganese adopts various distorted coordination polyhedra; [MnO{sub 6}] octahedra, [MnO{sub 5}] tetragonal pyramids and [MnO{sub 2}X{sub 2}] tetrahedra. Other building blocks are [SiO{sub 4}] tetrahedra and [TeO{sub 3}] trigonal pyramids. The structure is made up from layers having no net charge that are connected via weak Van der Waal interactions. The layers that are parallel to (1 1 0) consist of two manganese oxide sheets which are separated by [SiO{sub 4}] tetrahedra. On the outer sides of the sheets are the [MnO{sub 2}X{sub 2}] tetrahedra and the [TeO{sub 3}] trigonal pyramids connected so that the halide ions and the stereochemically active lone pairs on the tellurium atoms protrude from the layers. Magnetic susceptibility measurements reveal a Curie law with a Weiss temperature of θ=−153(3) K for temperatures ≥100 K and indicate antiferromagnetic ordering at T{sub N} ∼4 K. Possible structural origins of the large frustration parameter of f=38 are discussed. - Graphical abstract: Table of contents caption. The new compounds Mn{sub 4}(TeO{sub 3})(SiO{sub 4})X{sub 2} (X=Br, Cl) are layered with weak Van der Waal interactions in between the layers. Manganese adopts various distorted coordination polyhedral, other building blocks are [SiO{sub 4}] tetrahedra and [TeO{sub 3}] trigonal pyramids. Magnetic susceptibility measurements indicate antiferromagnetic ordering at low temperatures and a large frustration parameter. - Highlights: • Two new isostructural oxohalide compounds are described. • The compounds are the first examples of

  12. Rheo-NMR Measurements of Cocoa Butter Crystallized Under

    SciTech Connect

    Mudge, E.; Mazzanti, G

    2009-01-01

    Modifications of a benchtop NMR instrument were made to apply temperature control to a shearing NMR cell. This has enabled the determination in situ of the solid fat content (SFC) of cocoa butter under shearing conditions. The cocoa butter was cooled at 3 C/min to three final temperatures of 17.5, 20.0, and 22.5 C with applied shear rates between 45 and 720 s-1. Polymorphic transitions of the cocoa butter were determined using synchrotron X-ray diffraction with an identical shearing system constructed of Lexan. Sheared samples were shown to have accelerated phase transitions compared to static experiments. In experiments where form V was confirmed to be the dominant polymorph, the final SFC averaged around 50%. However, when other polymorphic forms were formed, a lower SFC was measured because the final temperature was within the melting range of that polymorph and only partial crystallization happened. A shear rate of 720 s-1 delayed phase transitions, likely due to viscous heating of the sample. Pulsed NMR is an invaluable tool for determining the crystalline fraction in hydrogen containing materials, yet its use for fundamental and industrial research on fat or alkanes crystallization under shear has only recently been developed.

  13. Measurement of optical constants of Si and SiO2 from reflection electron energy loss spectra using factor analysis method

    NASA Astrophysics Data System (ADS)

    Jin, H.; Shinotsuka, H.; Yoshikawa, H.; Iwai, H.; Tanuma, S.; Tougaard, S.

    2010-04-01

    The energy loss functions (ELFs) and optical constants of Si and SiO2 were obtained from quantitative analysis of reflection electron energy loss spectroscopy (REELS) by a new approach. In order to obtain the ELF, which is directly related to the optical constants, we measured series of angular and energy dependent REELS spectra for Si and SiO2. The λ(E )K(ΔE) spectra, which are the product of the inelastic mean free path (IMFP) and the differential inverse IMFP, were obtained from the measured REELS spectra. We used the factor analysis (FA) method to analyze series of λ(E )K(ΔE) spectra for various emission angles at fixed primary beam energy to separate the surface-loss and bulk-loss components. The extracted bulk-loss components enable to obtain the ELFs of Si and SiO2, which are checked by oscillator strength-sum and perfect-screening-sum rules. The real part of the reciprocal of the complex dielectric function was determined by Kramers-Kronig analysis of the ELFs. Subsequently, the optical constants of Si and SiO2 were calculated. The resulting optical constants in terms of the refractive index and the extinction coefficient for Si and SiO2 are in good agreement with Palik's reference data. The results demonstrate the general applicability of FA as an efficient method to obtain the bulk ELF and to determine the optical properties from REELS measurements.

  14. A polycrystalline SiO2 colloidal crystal film with ultra-narrow reflections.

    PubMed

    Fu, Qianqian; Chen, Ang; Shi, Lei; Ge, Jianping

    2015-04-30

    This work reported a high quality photonic crystal film with an ultra-narrow photonic bandgap obtained via a chemical synthetic route. The bandgap is much narrower than that of traditional colloidal crystals, which makes the film qualified for use in optical devices. The narrow PBG originates from not only the high crystallinity and uniform orientations of microcrystals within the film but also the very close refractive indices between the silica and the polymer matrix. Due to the matching of the refractive index, the amorphous contents of the film are optically transparent and do not interfere with the reflection, so that the photonic crystal film is tolerant of the existence of disordered contents.

  15. Nano-scale elastic-plastic properties and indentation-induced deformation of single crystal 4H-SiC.

    PubMed

    Nawaz, A; Mao, W G; Lu, C; Shen, Y G

    2017-02-01

    The nanoscale elastic-plastic response of single crystal 4H-SiC has been investigated by nanoindentationwith a Berkovich tip. The hardness (H) and elastic modulus (E) determined in the load-independent region were 36±2GPa and 413±8GPa, respectively. The indentation size effect (ISE) of hardness within an indentation depth of 60nm was systematically analyzed by the Nix-Gao model. Pop-in events occurring at a depth of ~23nm with indentation loads of 0.60-0.65mN were confirmed to indicate the elastic-plastic transition of the crystal, on the basis of the Hertzian contact theory and Johnson's cavity model. Theoritically calculated maximum tensile strength (13.5GPa) and cleavage strength (33GPa) also affirms the deformation due to the first pop-in rather than tensile stresses. Further analyses of deformation behavior across the indent was done in 4H-SiC by a combined technique of focused ion beam and transmission electron microscope, revealing that slippage occurred in the (0001) plane after indentation.

  16. On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects

    SciTech Connect

    Gaidar, G. P.

    2015-09-15

    A variation in the tensoresistance of n-Ge:Sb and n-Si:As crystals as a result of irradiation with γ-ray photons ({sup 60}Co source) at fixed temperatures under conditions of the application of uniaxial elastic stress (0 ≤ X ≤ 1.2 GPa) along the main crystallographic direction is studied. It is found that, in the case of the deformation axis being in an asymmetric position relative to the isoenergetic ellipsoids, there is a maximum for the dependences of the tensoresistance ρ{sub X}/ρ{sub 0} = f(X); an explanation as to the nature of the observed effect is suggested. Tensoresistance is revealed in unirradiated n-Si:As crystals in the case of the deformation axis being in a symmetric position relative to all isoenergetic ellipsoids; the value of the tensoresistance as a result of irradiation with γ-ray photons decreases. It is shown that this effect can be attributed to a variation in the mobility of electrons in the conduction band as a result of an increase in the transverse effective mass and the appearance of new deep-level centers under the effect of irradiation, respectively.

  17. Excited-state absorption measurements of Tm3+-doped crystals

    NASA Astrophysics Data System (ADS)

    Szela, J. W.; Mackenzie, J. I.

    2012-06-01

    High resolution, absolute excited-state absorption (ESA) spectra, at room temperature, from the long-lived 3F4 energy level of several crystals doped with trivalent thulium (Tm3+) ions have been measured employing high-brightness narrowband (FWHM <30 nm) light emitting diodes (LEDs) as a probe wavelength. The aim of this investigation was to determine the strength of ESA channels at wavelengths addressable by commercially available semiconductor laser diodes operating around 630-680 nm. The favourable lifetime of the 3F4 manifold and negligible ground-state absorption (GSA) for the red-wavelength second-step excitation, ensures a direct and efficient route for a dual-wavelength pumping scheme of the thulium ion, which will enable blue-green laser emission from its 1G4 upper-laser level.

  18. Measurement of the coincidence response of very thin BGO crystals

    SciTech Connect

    Murthy, K.; Thompson, C.J. . Montreal Neurological Inst.); Weinberg, I.N. Johns Hopkins Univ., Baltimore, MD . Dept. of Radiology); Mako, F.M. )

    1994-08-01

    More then half the 511 keV photons in BGO crystals undergo Compton scattering at least once prior to photo-electric interaction within the detector. In a PET scanner, this can result in mis-positioning of annihilation events. As crystal dimensions are made smaller, the fraction of mispositioned events increases. The authors have studied the coincidence aperture function (CAF) of 25 mm [times] 10 mm BGO crystals with thicknesses varying from 1 mm to 3 mm in steps of 0.5 mm. By sandwiching the active crystal between two other BGO crystals not in contact with the photomultiplier, the authors have studied the effect of Compton scatter upon CAF. By allowing the annihilation photons to be incident along the 25 mm axis and the 10 mm axis, the authors have studied the effect of detector depth upon the CAF, with and without Compton Scatter. The CAF increases linearly with crystal width, ranging from 1.3 mm for the 1 mm wide crystal to 2.15 for 3 mm crystal. The lines joining the FWHM of the CAFs as a function of crystal width appear to converge indicating that no further improvement in resolution can be achieved by reducing crystal width. The CAFs for 10 mm and 25 mm long crystals without Compton scatter is essentially the same. The presence of neighboring crystals results in an increase in the CAF which is greater for long crystals compared with short ones of the same width. Using 1 mm wide and 10 mm long crystals sandwiched between two uncoupled BGO crystals, the authors have achieved spatial resolution of 1.64 mm FWHM for a PMT separation of 34 cm. Recent experiments with PMT separation of 11.5 cm have yielded 1.23 mm FWHM CAF in the same setup.

  19. Optical transition probabilities in Er3+- and Tm3+-doped LiLa9(SiO4)6O2 crystals.

    PubMed

    Cantelar, E; Quintanilla, M; Cussó, F; Cavalli, E; Bettinelli, M

    2010-06-02

    In this work, Er(3+) and Tm(3+)-doped LiLa(9)(SiO(4))(6)O(2) crystals have been grown from an Li(2)MoO(4) flux in the 1360-940 °C temperature range. Optical absorption spectra have been measured to obtain the experimental oscillator strengths of the transitions from the ground state to the excited levels. Judd-Ofelt calculations have been performed to estimate the Ω(2), Ω(4) and Ω(6) intensity parameters. The dynamics of selected Er(3+) and Tm(3+) manifolds have been investigated under selective pulsed excitation in order to determine the energy gap law by comparing the observed decay rates with the Judd-Ofelt predictions.

  20. Measurements of striae in CR+ doped YAG laser crystals

    NASA Technical Reports Server (NTRS)

    Cady, Fredrick M.

    1994-01-01

    Striations in Czochralski (CZ) grown crystals have been observed in materials such as GaAs, silicon, photorefractive crystals used for data storage, potassium titanyl phosphate crystals and LiNbO3. Several techniques have been used for investigating these defects including electron microscopy, laser scanning tomography, selective photoetching, X-ray diffuse scattering, interference orthoscopy, laser interferometry and micro-Fourier transform infrared spectroscopy mapping. A 2mm thick sample of the material to be investigated is illuminated with light that is absorbed and non-absorbed by the ion concentration to be observed. The back surface of the sample is focused onto a solid-state image detector and images of the input beam and absorbed (and diffracted) beams are captured at two wavelengths. The variation of the coefficient of absorption asa function of distance on the sample can be derived from these measurements. A Big Sky Software Beamcode system is used to capture and display images. Software has been written to convert the Beamcode data files to a format that can be imported into a spreadsheet program such as Quatro Pro. The spreadsheet is then used to manipulate and display data. A model of the intensity map of the striae collected by the imaging system has been proposed and a data analysis procedure derived. From this, the variability of the attenuation coefficient alpha can be generated. Preliminary results show that alpha may vary by a factor of four or five over distances of 100 mu m. Potential errors and problems have been discovered and additional experiments and improvements to the experimental setup are in progress and we must now show that the measurement techniques and data analysis procedures provide 'real' information. Striae are clearly visible at all wavelengths including white light. Their basic spatial frequency does not change radically, at least when changing from blue to green to white light. Further experimental and theoretical work can

  1. Investigation of crystal surface finish and geometry on single LYSO scintillator detector performance for depth-of-interaction measurement with silicon photomultipliers

    NASA Astrophysics Data System (ADS)

    Bircher, Chad; Shao, Yiping

    2012-11-01

    Depth of Interaction (DOI) information can improve quality of reconstructed images acquired from Positron Emission Tomography (PET), especially in high resolution and compact scanners dedicated for breast, brain, or small animal imaging applications. Additionally, clinical scanners with time of flight capability can also benefit from DOI information. One of the most promising methods of determining DOI in a crystal involves reading the signal from two ends of a scintillation crystal, and calculating the signal ratio between the two detectors. This method is known to deliver a better DOI resolution with rough crystals compared to highly polished crystals. However, what is still not well studied is how much of a tradeoff is involved between spatial, energy, temporal, and DOI resolutions as a function of the crystal surface treatment and geometry with the use of Silicon Photomultipliers (SiPM) as the photo detectors. This study investigates the effects of different crystal surface finishes and geometries on energy, timing and DOI resolutions at different crystal depths. The results show that for LYSO scintillators of 1.5×1.5×20 mm3 and 2×2×20 mm3 with their surfaces finished from 0.5 to 30 μm roughness, almost the same energy and coincidence timing resolutions were maintained, around 15% and 2.4 ns, respectively across different crystal depths, while the DOI resolutions were steadily improved from worse than 5 mm to better than 2 mm. They demonstrate that crystal roughness, with proper surface preparing, does not have a significant effect on the energy and coincidence timing resolutions in the crystals examined, and there does not appear to be a tradeoff between improving DOI resolution and degrading other detector performances. These results will be valuable to guide the selection of crystal surface conditions for developing a DOI measurable PET detector with a full array of LYSO scintillators coupled to SiPM arrays.

  2. Investigation of Crystal Surface Finish and Geometry on Single LYSO Scintillator Detector Performance for Depth-of-Interaction Measurement with Silicon Photomultipliers.

    PubMed

    Bircher, Chad; Shao, Yiping

    2012-11-21

    Depth of Interaction (DOI) information can improve quality of reconstructed images acquired from Positron Emission Tomography (PET), especially in high resolution and compact scanners dedicated for breast, brain, or small animal imaging applications. Additionally, clinical scanners with time of flight capability can also benefit from DOI information. One of the most promising methods of determining DOI in a crystal involves reading the signal from two ends of a scintillation crystal, and calculating the signal ratio between the two detectors. This method is known to deliver a better DOI resolution with rough crystals compared to highly polished crystals. However, what is still not well studied is how much of a tradeoff is involved between spatial, energy, temporal, and DOI resolutions as a function of the crystal surface treatment and geometry with the use of Silicon Photomultipliers (SiPM) as the photo detectors. This study investigates the effects of different crystal surface finishes and geometries on energy, timing and DOI resolutions at different crystal depths. The results show that for LYSO scintillators of 1.5×1.5×20 mm(3) and 2×2×20 mm(3) with their surfaces finished from 0.5 to 30 micron roughness, almost the same energy and coincidence timing resolutions were maintained, around 15% and 2.4 ns respectively across different crystal depths, while the DOI resolutions were steadily improved from worse than 5 mm to better than 2 mm. They demonstrate that crystal roughness, with proper surface preparing, does not have a significant effect on the energy and coincidence timing resolutions in the crystals examined, and there does not appear to be a tradeoff between improving DOI resolution and degrading other detector performances. These results will be valuable to guide the selection of crystal surface conditions for developing a DOI measurable PET detector with a full array of LYSO scintillators coupled to SiPM arrays.

  3. Interfacial study of the role of SiO2 on Si anodes using electrochemical quartz crystal microbalance

    NASA Astrophysics Data System (ADS)

    Hubaud, Aude A.; Yang, ZhenZhen; Schroeder, David J.; Dogan, Fulya; Trahey, Lynn; Vaughey, John T.

    2015-05-01

    One of the challenges associated with silicon as an anode material for Li-ion batteries is the formation of an unstable solid-electrolyte interphase which, forms continuously while consuming lithium and other components; and consequently contributes to irreversible capacity. To elucidate some of the details of the formation and subsequent dissolution of species formed during lithiation of silicon anodes we have produced thin film silicon electrodes and analyzed them during lithiation and delithiation using an electrochemical quartz microbalance with in-situ dissipation (EQCM-D). Measurements were conducted on electrodes with silicon alone and silicon with a silicon dioxide coating, and in EC:EMC and EC:DEC:FEC based electrolytes. Mass loss during lithiation was observed in both solvents systems when an oxide layer was present on the surface of the electrode. Solid state and solution NMR measurements indicate that the formation and dissolution of Li2O is the most likely cause of mass loss.

  4. Thermal conductivity measurement and interface thermal resistance estimation using SiO2 thin film.

    PubMed

    Chien, Heng-Chieh; Yao, Da-Jeng; Huang, Mei-Jiau; Chang, Tien-Yao

    2008-05-01

    In this paper, we describe an easy-to-use method to measure the thermal conductivity of thin films based on an electrical heating/sensing mechanism and a steady-state technique. The method used relative commonly used instruments, and without any signal processing circuit, is easy to be used in such thin-film thermal conductivity measurement. The SiO2 thin-film samples, prepared by thermal oxidation, plasma enhanced chemical vapor deposition (PECVD), and E-beam evaporator, were deposited on a silicon substrate. The apparent thermal conductivity, the intrinsic thermal conductivity of SiO2 films, and the total interface thermal resistance of the heater/SiO2/silicon system were evaluated. Our data showed agreement with those data obtained from previous literatures and from the 3 omega method. Furthermore, by using a sandwiched structure, the interface thermal resistance of Cr/PECVD SiO2 and PECVD SiO2/silicon were also separately evaluated in this work. The data showed that the interface thermal resistance of Cr/PECVD SiO2 (metal/dielectric) is about one order of magnitude larger than that of PECVD SiO2/silicon (dielectric/dielectric).

  5. A More Accurate Measurement of the {sup 28}Si Lattice Parameter

    SciTech Connect

    Massa, E. Sasso, C. P.; Mana, G.; Palmisano, C.

    2015-09-15

    In 2011, a discrepancy between the values of the Planck constant measured by counting Si atoms and by comparing mechanical and electrical powers prompted a review, among others, of the measurement of the spacing of {sup 28}Si (220) lattice planes, either to confirm the measured value and its uncertainty or to identify errors. This exercise confirmed the result of the previous measurement and yields the additional value d{sub 220} = 192 014 711.98(34) am having a reduced uncertainty.

  6. Ultrafast Optical Measurements of Thermal Conductivity and Sound Velocity of Amorphous SiC

    NASA Astrophysics Data System (ADS)

    Hondongwa, Donald; Olasov, Lauren; Daly, Brian; King, Sean; Bielefeld, Jeff

    2011-03-01

    We present ultrafast optical measurements of longitudinal sound velocity and thermal transport in hydrogenated amorphous carbon (a-SiC:H) films. The films were grown on Si wafers by PECVD using combinations of methylsilanes and H2 and He diluent gases. The films were well characterized and found to have densities (1.0 -- 2.5 g cm-3) and dielectric constants (2.8 -- 7.2) that spanned a wide range of values. Prior to their measurement, the a-SiC:H films were coated with 40-70 nm of polycrystalline Al. The pump-probe measurements were performed at room temperature using a modelocked Ti:sapphire laser. Transient reflectivity changes that are associated with very high frequency sound waves (picosecond ultrasonics) and the cooling rate of the SiC sample (Time Domain Thermorerflectance (TDTR)) were measured. We extract values for the thermal conductivity and sound velocity of the SiC films, and analyze the results in terms of rigidity percolation effects within the SiC layers. This work was supported by NSF award DMR-0906753.

  7. Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications

    PubMed Central

    Tran, Binh Tinh; Maeda, Noritoshi; Jo, Masafumi; Inoue, Daishi; Kikitsu, Tomoka; Hirayama, Hideki

    2016-01-01

    An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si substrates has so far been insufficient for replacing templates grown on sapphire substrates. In this work, we grew a high-quality AlN template on 2 in. micro-circle-patterned Si substrate (mPSiS) with two different sizes and shapes through controlling the bias power of inductively coupled plasma (ICP) etching. The experimental results showed that the best AlN template was obtained on a large pattern size with a bow-angle shape and the template had X-ray rocking curves with full widths at half-maximum of 620 and 1141 arcsec for the (002) and (102) reflection planes. The threading dislocation density near surface of AlN template through transmission electron microscopy (TEM) estimation was in the order of 107 cm−2, which is the lowest dislocation density reported for a Si substrate to our knowledge. A strong single electroluminescence (EL) peak was also obtained for an AlGaN-based deep UV-LED grown on this template, means that it can be used for further developing high-efficiency deep UV-LEDs. PMID:27819331

  8. Growth of single-crystal Al layers on GaAs and Si substrates for microwave superconducting resonators

    NASA Astrophysics Data System (ADS)

    Tournet, J.; Gosselink, D.; Jaikissoon, M.; Miao, G.-X.; Langenberg, D.; Mariantoni, M.; Wasilewski, Zr

    Thin Al layers on dielectrics are essential building blocks of circuits used in the quest for scalable quantum computing systems. While molecular beam epitaxy (MBE) has been shown to produce the highest quality Al layers, further reduction of losses in superconducting resonators fabricated from them is highly desirable. Defects at the Al-substrate interface are likely the key source of losses. Here we report on the optimization of MBE growth of Al layers on GaAs and Si substrates. Si surfaces were prepared by in-situ high temperature substrate annealing. For GaAs, defects typically remaining on the substrate surfaces after oxide desorption were overgrown with GaAs or GaAs/AlAs superlattice buffer layers. Such surface preparation steps were followed by cooling process to below 0°C, precisely controlled to obtain targeted surface reconstructions. Deposition of 110 nm Al layers was done at subzero temperatures and monitored with RHEED at several azimuths simultaneously. The resulting layers were characterized by HRXRD, AFM and Nomarski. Single crystal, near-atomically smooth layers of Al(110) were demonstrated on GaAs(001)-2x4 surface whereas Al(111) of comparable quality was formed on Si(111)-1x1 and 7x7 surfaces.

  9. Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications

    NASA Astrophysics Data System (ADS)

    Tran, Binh Tinh; Maeda, Noritoshi; Jo, Masafumi; Inoue, Daishi; Kikitsu, Tomoka; Hirayama, Hideki

    2016-11-01

    An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si substrates has so far been insufficient for replacing templates grown on sapphire substrates. In this work, we grew a high-quality AlN template on 2 in. micro-circle-patterned Si substrate (mPSiS) with two different sizes and shapes through controlling the bias power of inductively coupled plasma (ICP) etching. The experimental results showed that the best AlN template was obtained on a large pattern size with a bow-angle shape and the template had X-ray rocking curves with full widths at half-maximum of 620 and 1141 arcsec for the (002) and (102) reflection planes. The threading dislocation density near surface of AlN template through transmission electron microscopy (TEM) estimation was in the order of 107 cm‑2, which is the lowest dislocation density reported for a Si substrate to our knowledge. A strong single electroluminescence (EL) peak was also obtained for an AlGaN-based deep UV-LED grown on this template, means that it can be used for further developing high-efficiency deep UV-LEDs.

  10. DLTS Measurement on Electron-Irradiated GaAs-on-Si

    NASA Astrophysics Data System (ADS)

    Okamoto, Hiroshi; Oh'hara, Takahiko; Kadota, Yoshiaki; Ohmachi, Yoshiro

    1990-06-01

    Three electron traps, E3*, E4*, and E5*, are observed in 1 MeV-electron-irradiated GaAs-on-Si by using DLTS measurement. The characteristics of these traps are similar to those of E3, E4, and E5 in irradiated GaAs-on-GaAs. The slightly lower activation energies and broader DLTS peaks of the traps in GaAs-on-Si than those in GaAs-on-GaAs might be caused by band-gap decrease and valence-band splitting of biaxially strained GaAs on Si.

  11. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    NASA Astrophysics Data System (ADS)

    Pantzas, K.; Le Bourhis, E.; Patriarche, G.; Troadec, D.; Beaudoin, G.; Itawi, A.; Sagnes, I.; Talneau, A.

    2016-03-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m-2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  12. High Energy IED measurements with MEMs based Si grid technology inside a 300mm Si wafer

    NASA Astrophysics Data System (ADS)

    Funk, Merritt

    2012-10-01

    The measurement of ion energy at the wafer surface for commercial equipment and process development without extensive modification of the reactor geometry has been an industry challenge. High energy, wide frequency range, process gases tolerant, contamination free and accurate ion energy measurements are the base requirements. In this work we will report on the complete system developed to achieve the base requirements. The system includes: a reusable silicon ion energy analyzer (IEA) wafer, signal feed through, RF confinement, and high voltage measurement and control. The IEA wafer design required carful understanding of the relationships between the plasma Debye length, the number of grids, intergrid charge exchange (spacing), capacitive coupling, materials, and dielectric flash over constraints. RF confinement with measurement transparency was addressed so as not to disturb the chamber plasma, wafer sheath and DC self-bias as well as to achieve spectral accuracy The experimental results were collected using a commercial parallel plate etcher powered by a dual frequency (VHF + LF). Modeling and Simulations also confirmed the details captured in the IED.

  13. Set-up and methods for SiPM Photo-Detection Efficiency measurements

    NASA Astrophysics Data System (ADS)

    Zappalà, G.; Acerbi, F.; Ferri, A.; Gola, A.; Paternoster, G.; Zorzi, N.; Piemonte, C.

    2016-08-01

    In this work, a compact set-up and three different methods to measure the Photo-Detection Efficiency (PDE) of Silicon Photomultipliers (SiPMs) and Single-Photon Avalanche Diodes (SPADs) are presented. The methods, based on either continuous or pulsed light illumination, are discussed in detail and compared in terms of measurement precision and time. For the SiPM, these methods have the feature of minimizing the effect of both the primary and correlated noise on the PDE estimation. The PDE of SiPMs (produced at FBK, Trento, Italy) was measured in a range from UV to NIR, obtaining similar results with all the methods. Furthermore, the advantages of measuring, when possible, the PDE of SPADs (of the same technology and with the same layout of a single SiPM cell) instead of larger devices are also discussed and a direct comparison between measurement results is shown. Using a SPAD, it is possible to reduce the measurement complexity and uncertainty since the correlated noise sources are reduced with respect to the SiPM case.

  14. Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y2SiO5 crystal

    DOE PAGES

    Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; ...

    2017-01-28

    Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this study, we used 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated Y2SiO5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prism coupling and the end-facetmore » coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. Finally, 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.« less

  15. Crystalline and spin chiralities in multiferroics with langasite-type structure and Fe1- x Co x Si crystals

    NASA Astrophysics Data System (ADS)

    Pikin, S. A.; Lyubutin, I. S.; Dudka, A. P.

    2015-09-01

    It is shown that, when magnetic ordering occurs in layered iron-containing langasites (sp. gr. P321), one of the reasons for spin chiralities of different signs is the presence of structural chirality (the existence of inversion twins), which, in turn, is due to the nonsymmetricity of these crystals. Spin helicoids arise in these multiferroics at split sites of Fe3+ ions below the Néel point. The direction of electric polarization vectors coincides with the direction of the magnetic helicoid axes because of the piezoelectric properties of these materials. Due to the magnetostriction effects, structural chirality wave vector k z exceeds the magnetic helicoid wave vector by a factor of 2: k z = 2 q z. The temperatures of transitions to the chiral structural and chiral magnetic states may differ. In particular, if the structural transition initial temperature exceeds the magnetic transition temperature ( Т U > Т М ), structural displacements may arise in the absence of magnetism at Т М < Т < Т U . In noncentrosymmetric Fe1- x Co x Si crystals (sp. gr. P213), which are not multiferroics, magnetic chirality is due to the Dzyaloshinski-Moriya interaction. The dependence of the moduli of incommensurate wave number of the corresponding helicoid on the atomic composition of the crystals under consideration is nonmonotonic.

  16. Phonon spectra of eulytite crystals Bi4M3O12 (M = Ge,Si): ab initio study

    NASA Astrophysics Data System (ADS)

    Avram, N. M.; Chernyshev, V. A.; Andreici, E.-L.; Petrov, V. P.; Petkova, P.

    2016-11-01

    In this paper we present the results of ab initio DFT calculation of phonon spectra for bismuth ortho-germanate Bi4Ge3O12 and bismuth ortho-silicate Bi4Si3O12 crystals, in the center of the first Brillouin zone. First, the geometry optimization was performed using the analytical energy gradients, with respect to atomic coordinates and unit cell parameters. Vibrational frequencies and normal modes were calculated within the harmonic approximation by diagonalizing the mass-weighted Hessian matrix. The IR and Raman spectra of both crystals were simulated with the periodic ab initio Crystal 09 code and B3LYP hybrid functional and the two sets of Transverse-Optical and Longitudinal-Optical frequencies are generated, together with their intensities. Also, the influence of isotopic substitution for Bi, Ge and O in phonon modes and the picture with values of frequencies shift in each mode by isotopic substitution were calculated. The obtained results are discussed and the comparision between the computed spectra and experimental data is quite satisfactory, which justifies the model and simulation scheme used for the title systems.

  17. Viscosity measurements of crystallizing andesite from Tungurahua volcano (Ecuador).

    PubMed

    Chevrel, Magdalena Oryaëlle; Cimarelli, Corrado; deBiasi, Lea; Hanson, Jonathan B; Lavallée, Yan; Arzilli, Fabio; Dingwell, Donald B

    2015-03-01

    Viscosity has been determined during isothermal crystallization of an andesite from Tungurahua volcano (Ecuador). Viscosity was continuously recorded using the concentric cylinder method and employing a Pt-sheathed alumina spindle at 1 bar and from 1400°C to subliquidus temperatures to track rheological changes during crystallization. The disposable spindle was not extracted from the sample but rather left in the sample during quenching thus preserving an undisturbed textural configuration of the crystals. The inspection of products quenched during the crystallization process reveals evidence for heterogeneous crystal nucleation at the spindle and near the crucible wall, as well as crystal alignment in the flow field. At the end of the crystallization, defined when viscosity is constant, plagioclase is homogeneously distributed throughout the crucible (with the single exception of experiment performed at the lowest temperature). In this experiments, the crystallization kinetics appear to be strongly affected by the stirring conditions of the viscosity determinations. A TTT (Time-Temperature-Transformation) diagram illustrating the crystallization "nose" for this andesite under stirring conditions and at ambient pressure has been constructed. We further note that at a given crystal content and distribution, the high aspect ratio of the acicular plagioclase yields a shear-thinning rheology at crystal contents as low as 13 vol %, and that the relative viscosity is higher than predicted from existing viscosity models. These viscosity experiments hold the potential for delivering insights into the relative influences of the cooling path, undercooling, and deformation on crystallization kinetics and resultant crystal morphologies, as well as their impact on magmatic viscosity.

  18. Viscosity measurements of crystallizing andesite from Tungurahua volcano (Ecuador)

    PubMed Central

    Cimarelli, Corrado; deBiasi, Lea; Hanson, Jonathan B.; Lavallée, Yan; Arzilli, Fabio; Dingwell, Donald B.

    2015-01-01

    Abstract Viscosity has been determined during isothermal crystallization of an andesite from Tungurahua volcano (Ecuador). Viscosity was continuously recorded using the concentric cylinder method and employing a Pt‐sheathed alumina spindle at 1 bar and from 1400°C to subliquidus temperatures to track rheological changes during crystallization. The disposable spindle was not extracted from the sample but rather left in the sample during quenching thus preserving an undisturbed textural configuration of the crystals. The inspection of products quenched during the crystallization process reveals evidence for heterogeneous crystal nucleation at the spindle and near the crucible wall, as well as crystal alignment in the flow field. At the end of the crystallization, defined when viscosity is constant, plagioclase is homogeneously distributed throughout the crucible (with the single exception of experiment performed at the lowest temperature). In this experiments, the crystallization kinetics appear to be strongly affected by the stirring conditions of the viscosity determinations. A TTT (Time‐Temperature‐Transformation) diagram illustrating the crystallization “nose” for this andesite under stirring conditions and at ambient pressure has been constructed. We further note that at a given crystal content and distribution, the high aspect ratio of the acicular plagioclase yields a shear‐thinning rheology at crystal contents as low as 13 vol %, and that the relative viscosity is higher than predicted from existing viscosity models. These viscosity experiments hold the potential for delivering insights into the relative influences of the cooling path, undercooling, and deformation on crystallization kinetics and resultant crystal morphologies, as well as their impact on magmatic viscosity. PMID:27656114

  19. Crystallography of the NiHfSi Phase in a NiAl (0.5 Hf) Single-Crystal Alloy

    NASA Technical Reports Server (NTRS)

    Garg, A.; Noebe, R. D.; Darolia, R.

    1996-01-01

    Small additions of Hf to conventionally processed NiAl single crystals result in the precipitation of a high density of cuboidal G-phase along with a newly identified silicide phase. Both of these phases form in the presence of Si which is not an intentional alloying addition but is a contaminant resulting from contact with the ceramic shell molds during directional solidification of the single-crystal ingots. The morphology, crystal structure and Orientation Relationship (OR) of the silicide phase in a NiAl (0.5 at.%Hf) single-crystal alloy have been determined using transmission electron microscopy, electron microdiffraction and energy dispersive X-ray spectroscopy. Qualitative elemental analysis and indexing of the electron microdiffraction patterns from the new phase indicate that it is an orthorhombic NiHfSi phase with unit cell parameters, a = 0.639 nm, b = 0.389 nm and c = 0.72 nm, and space group Pnma. The NiHfSi phase forms as thin rectangular plates on NiAl/111/ planes with an OR that is given by NiHfSi(100))(parallel) NiAl(111) and NiHfSi zone axes(010) (parallel) NiAl zone axes (101). Twelve variants of the NiHfSi phase were observed in the alloy and the number of variants and rectangular morphology of NiHfSi plates are consistent with symmetry requirements. Quenching experiments indicate that nucleation of the NiHfSi phase in NiAI(Hf) alloys is aided by the formation of NiAl group of zone axes (111) vacancy loops that form on the NiAl /111/ planes.

  20. Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth

    NASA Astrophysics Data System (ADS)

    Niinomi, Hiromasa; Horio, Atsushi; Harada, Shunta; Ujihara, Toru; Miura, Hitoshi; Kimura, Yuki; Tsukamoto, Katsuo

    2014-05-01

    The solubility of the metastable achiral monoclinic phase in NaClO3 crystallization from an aqueous solution, which appears prior to the nucleation of chiral crystals, was successfully measured in the range from 10 °C to 23 °C. Antisolvent crystallization method was used to obtain metastable crystals for the measurement. The solubility was determined to be about 1.6 times higher than that of the chiral stable cubic phase by observing growth or dissolution of the crystal in aqueous solution at the temperature and concentration of which is predetermined.

  1. Growth of(Fe xMg 1 - x) 2SiO 4 single crystals by the double pass floating zone method

    NASA Astrophysics Data System (ADS)

    Tsai, Tse-Lun; Markgraf, Steven A.; Higuchi, Mikio; Dieckmann, Ru¨diger

    1996-12-01

    Good quality olivine single crystals,(Fe xMg 1 - x) 2SiO 4, have been successfully grown by the floating zone method using an image furnace. The double pass floating zone method was utilized to grow crystals with uniform composition along the growth axis. Chemical analyses by electron microprobe confirmed that the crystals were homogeneous in composition along the growth direction over the entire length of the boule. The primary crystal defects observed were bubbles. Precipitates, such as iron oxide and silica-rich phases were only occasionally found in iron-rich olivine crystals. An after-heater, either active or passive, was placed just below the freezing interface to control the interface shape and reduce the thermal gradient, enabling the growth of crack-free single crystals.

  2. Measuring the x-ray resolving power of bent potassium acid phthalate diffraction crystals

    SciTech Connect

    Haugh, M. J. Jacoby, K. D.; Wu, M.; Loisel, G. P.

    2014-11-15

    This report presents the results from measuring the X-ray resolving power of a curved potassium acid phthalate (KAP(001)) spectrometer crystal using two independent methods. It is part of a continuing effort to measure the fundamental diffraction properties of bent crystals that are used to study various characteristics of high temperature plasmas. Bent crystals like KAP(001) do not usually have the same diffraction properties as corresponding flat crystals. Models that do exist to calculate the effect of bending the crystal on the diffraction properties have simplifying assumptions and their accuracy limits have not been adequately determined. The type of crystals that we measured is being used in a spectrometer on the Z machine at Sandia National Laboratories in Albuquerque, New Mexico. The first technique for measuring the crystal resolving power measures the X-ray spectral line width of the characteristic lines from several metal anodes. The second method uses a diode X-ray source and a double crystal diffractometer arrangement to measure the reflectivity curve of the KAP(001) crystal. The width of that curve is inversely proportional to the crystal resolving power. The measurement results are analyzed and discussed.

  3. Measuring the x-ray resolving power of bent potassium acid phthalate diffraction crystals.

    PubMed

    Haugh, M J; Wu, M; Jacoby, K D; Loisel, G P

    2014-11-01

    This report presents the results from measuring the X-ray resolving power of a curved potassium acid phthalate (KAP(001)) spectrometer crystal using two independent methods. It is part of a continuing effort to measure the fundamental diffraction properties of bent crystals that are used to study various characteristics of high temperature plasmas. Bent crystals like KAP(001) do not usually have the same diffraction properties as corresponding flat crystals. Models that do exist to calculate the effect of bending the crystal on the diffraction properties have simplifying assumptions and their accuracy limits have not been adequately determined. The type of crystals that we measured is being used in a spectrometer on the Z machine at Sandia National Laboratories in Albuquerque, New Mexico. The first technique for measuring the crystal resolving power measures the X-ray spectral line width of the characteristic lines from several metal anodes. The second method uses a diode X-ray source and a double crystal diffractometer arrangement to measure the reflectivity curve of the KAP(001) crystal. The width of that curve is inversely proportional to the crystal resolving power. The measurement results are analyzed and discussed.

  4. The effect of near-crystallization temperature annealing on the electrochemical behavior of amorphous Fe[sub 77. 5]B[sub 15]Si[sub 7. 5] fibres in borate buffer

    SciTech Connect

    Chattoraj, I.; Bhattamishra, A.K. . CRP Div.); Mitra, A. . MTP Div.)

    1993-09-01

    Amorphous alloys are increasingly being utilized in various industrial situations. Most of the studies on electrochemical behavior and corrosion resistance have been on amorphous ribbons, which have two surfaces (shiny side and dull side), with different corrosion behavior. Electrochemical studies on amorphous fibres are relatively few. Crystallization of amorphous materials leads to changes in physical properties, which are of practical benefit. The theoretical and practical importance of the crystallization of amorphous materials are borne out by the volume of work on the kinetics of the process. Various direct, as well as indirect, means have been employed to follow the process of crystallization. Investigation of the process in amorphous fibres by direct observation by TEM or x-ray diffraction is extremely difficult due to the very small radial dimensions, and researchers must resort to indirect means like resistivity measurements. Whereas the earlier work was on post-crystallization changes, this work focused on samples annealed at near and below crystallization temperatures. In the former, the electrochemical response as well as resistivity changes were influenced not only by the phase fraction of the primary [alpha]-Fe phase, but also by the appearance of secondary phases like Fe[sub 2]B, Fe[sub 3]B, etc., as well as by the process of grain growth of each phase. In this work the annealing temperatures and times were selected such that the contribution of secondary phases could be precluded and thus the process of crystallization of the primary phase could be studied. Although the emphasis was on electrochemical measurements as a means of studying the crystallization process in Fe[sub 77.5]Si[sub 7.5]B[sub 15] amorphous fibres, the authors also obtained isothermal resistivity values as alternate measures of the crystallization process. In this paper they have tried to explain the differences observed in the two measurement techniques.

  5. Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations

    SciTech Connect

    Marfaing, J.; Marine, W. ); Vidal, B. ); Toulemonde, M. ); Hage Ali, M.; Stoquert, J.P. )

    1990-10-22

    Ultrathin amorphous multilayers structures (1.55 nm bilayer period) were irradiated by high-energy heavy ion ({sup 127}I and {sup 238}U ions). Transmission electron microscopy study shows that the ion-material interaction in such a configuration leads to an irreversible transformation of the initial amorphous structures. In this letter, we report the first observation of the crystallization of the multilayers induced by the heavy ion irradiations with a subsequent formation of a new WSi structure. The crucial role of the electronic effects in the crystallization process is discussed relatively to the other phenomena induced under the ion irradiation.

  6. Single crystal growth and heat capacity measurements of triangular lattice R2Pt6Ga15 (R =rare earth)

    NASA Astrophysics Data System (ADS)

    Matsumoto, Y.; Ueda, T.; Ohara, S.

    2016-02-01

    We have succeeded in synthesizing the single crystal of R2Pt6Ga15 (R=La-Nd, Sm- Lu) with hexagonal Sc0.67Fe2Si5-type structure using Ga self flux method. The crystal structure was confirmed by the powder X-ray method. The unit-cell volume V of R2Pt6Ga15 follows the lanthanide concentration except R = Ce, Eu and Yb, indicating that the valences of R = La, Pr, Nd, Sm, Gd-Tm, and Lu ion are trivalent, whereas those of R = Ce, Eu and Yb ion are deviate from trivalent. We have measured the specific heat C(T) of R2Pt6Ga15. It is found that the magnetic order takes place in R2Pt6Ga15 (R=Pr, Nd, Sm-Tm). Moreover, the multiple phase transitions were observed in R2Pt6Ga15 (R = Nd, Eu, Gd and Ho).

  7. The Relationships Between Measures of Fluid, Crystallized, and "Piagetian" Intelligence in Elementary-School-Aged Children

    ERIC Educational Resources Information Center

    Rubin, Kenneth H.; And Others

    1978-01-01

    Examines the relationship between performance on two measures of fluid intelligence, one measure of crystallized intelligence, and three Piagetian measures of intelligence. Subjects were 102 first- and second-grade students. (BD)

  8. Chemical composition characterization of Ca3Ta(Ga0.5Al0.5)3Si2O14 single crystal by the line-focus-beam ultrasonic material characterization system

    NASA Astrophysics Data System (ADS)

    Ohashi, Yuji; Kudo, Tetsuo; Yokota, Yuui; Shoji, Yasuhiro; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

    2016-10-01

    A new method for evaluation of homogeneity of Ca3Ta(Ga0.5Al0.5)3Si2O14 (CTGAS) single crystals was established based on leaky surface acoustic wave (LSAW) velocity measurements performed by the line-focus-beam ultrasonic material characterization (LFB-UMC) system. Three plate specimens cut perpendicular to X-, Y-, and Z-axes were prepared from the CTGAS crystal ingot and LSAW velocity distributions were examined for these specimens. LSAW velocity changes due to Al-substitution effect were successfully extracted by using a relationship between two LSAW velocities propagating along different directions for Ca3TaGa3Si2O14 (CTGS) and Al-substituted CTGS. Comparison of measured LSAW velocities and the results of chemical composition analysis performed by electron probe microanalysis (EPMA) demonstrated that LSAW velocity is mainly affected by Al-content change in CTGAS. Maximum velocity variation was observed in radial direction of the crystal ingot through the Z-axis propagating LSAW velocity measurements for Y-cut CTGAS specimen corresponding to Al-content change of 0.226 mol%. Accuracy of evaluation of Al content by velocity measurement for Y-cut Z-propagating LSAW is estimated to be ±0.0047 mol% and is superior to that by EPMA.

  9. Capillary-force measurement on SiC surfaces

    NASA Astrophysics Data System (ADS)

    Sedighi, M.; Svetovoy, V. B.; Palasantzas, G.

    2016-06-01

    Capillary forces have been measured by atomic force microscopy in the sphere-plate geometry, in a controlled humidity environment, between smooth silicon carbide and borosilicate glass spheres. The force measurements were performed as a function of the rms surface roughness ˜4-14 nm mainly due to sphere morphology, the relative humidity (RH) ˜0%-40%, the applied load on the cantilever, and the contact time. The pull-off force was found to decrease by nearly two orders of magnitude with increasing rms roughness from 8 to 14 nm due to formation of a few capillary menisci for the roughest surfaces, while it remained unchanged for rms roughness <8 nm implying fully wetted surface features leading to a single meniscus. The latter reached a steady state in less than 5 s for the smoothest surfaces, as force measurements versus contact time indicated for increased RH˜40%. Finally, the pull-off force increases and reaches a maximum with applied load, which is associated with plastic deformation of surface asperities, and decreases at higher loads.

  10. Delta L: An Apparatus for Measuring Macromolecular Crystal Growth Rates in Microgravity

    NASA Technical Reports Server (NTRS)

    Judge, Russell A.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    In order to determine how macromolecule crystal quality improvement in microgravity is related to crystal growth characteristics, is was necessary to develop new hardware that could measure the crystal growth rates of a population of crystals growing under the same solution conditions. As crystal growth rate is defined as the change or delta in a defined dimension or length (L) of a crystal over time, the hardware was named Delta L. Delta L consists of fluids, optics, and data acquisition, sub-assemblies. Temperature control is provided for the crystal growth chamber. Delta L will be used in connection with the Glovebox Integrated Microgravity Isolation Technology (g-LIMIT) inside the Microgravity Science Glovebox (MSG), onboard the International Space Station (ISS). Delta L prototype hardware has been assembled. This paper will describe an overview of the design of Delta L and present preliminary crystal growth rate data.

  11. Discovery of iron group impurity ion spin states in single crystal Y{sub 2}SiO{sub 5} with strong coupling to whispering gallery photons

    SciTech Connect

    Goryachev, Maxim; Farr, Warrick G.; Carmo Carvalho, Natalia do; Creedon, Daniel L.; Le Floch, Jean-Michel; Probst, Sebastian; Bushev, Pavel; Tobar, Michael E.

    2015-06-08

    Interaction of Whispering Gallery Modes (WGMs) with dilute spin ensembles in solids is an interesting paradigm of Hybrid Quantum Systems potentially beneficial for Quantum Signal Processing applications. Unexpected ion transitions are measured in single crystal Y{sub 2}SiO{sub 5} using WGM spectroscopy with large Zero Field Splittings at 14.7 GHz, 18.4 GHz, and 25.4 GHz, which also feature considerable anisotropy of the g-tensors as well as two inequivalent lattice sites, indicating spins from Iron Group Ion (IGI) impurities. The comparison of undoped and Rare-Earth doped crystals reveal that the IGIs are introduced during co-doping of Eu{sup 3+} or Er{sup 3+} with concentration at much lower levels of order 100 ppb. The strong coupling regime between an ensemble of IGI spins and WGM photons have been demonstrated at 18.4 GHz and near zero field. This approach together with useful optical properties of these ions opens avenues for “spins-in-solids” Quantum Electrodynamics.

  12. X-ray diffraction on the X-cut of a Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} single crystal modulated by a surface acoustic wave

    SciTech Connect

    Irzhak, D. Roshchupkin, D.

    2014-06-28

    The result of X-ray diffraction study on a single crystal of the calcium-gallogermanate family Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} (CTGS) modulated by a surface acoustic wave (SAW) is presented. The power flow angle for SAW propagating along the X{sub 2} axis of the X-cut in CTGS was measured. The rocking curves for the CTGS crystal were recorded at different amplitudes of an input high frequency electric signal on interdigital transducer used to excite a SAW. Based on the data obtained, intensity dependence of diffraction satellites on the amplitude of electric signal exciting a SAW was built. Numerical simulation of the crystal rocking curves and dependence of diffraction satellite intensities on the SAW amplitude enabled the selection of a set of material constants at which the most complete coincidence of experimental and calculated results is observed.

  13. CW and passively Q-switched laser performance of Nd:Lu2SiO5 crystal

    NASA Astrophysics Data System (ADS)

    Xu, Xiaodong; Di, Juqing; Zhang, Jian; Tang, Dingyuan; Xu, Jun

    2016-01-01

    We demonstrated an efficient and controllable dual-wavelength continuous-wave (CW) laser of Nd:Lu2SiO5 (Nd:LSO) crystal. The maximum output power was 3.02 W at wavelength of 1075 nm and 1079 nm, and with increasing of absorbed pump power, the ratio of 1079 nm laser rose. The slope efficiency of 65.6% and optical-to-optical conversion efficiency of 63.3% were obtained. The passively Q-switched laser properties of Nd:LSO were investigated for the first time. The shortest pulse, maximum pulse energy and peak power were 11.58 ns, 29.05 μJ and 2.34 kW, respectively.

  14. Kerr-Lens Self-Mode-Locked Laser Characteristics of Yb:Lu2SiO5 Crystal

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Yang, Ji-Min; Wang, Wei-Wei; Zheng, Li-He; Su, Liang-Bi; Xu, Jun

    2011-07-01

    A diode-pumped Kerr-lens self-mode-locked laser is achieved by using Yb: Lu2SiO5(Yb:LSO) crystal without additional components. Under the incident pump power of 14.44 W, a self-mode-locked output power of 2.98 W is obtained in the five-mirror cavity, corresponding to an optical-optical efficiency of 20.6%. Pulses as short as 8.2 ps are realized at 1059 nm, with the corresponding pulse energy and peak power of 28.9 nJ and 3.5 kW, respectively. A pair of SF10 prisms are inserted into the laser cavity to compensate for the group velocity dispersion. The pulse width is compressed to 2.2 ps with an average output power of 1.25 W.

  15. The anisotropy of the basic characteristics of Lamb waves in a (001)-Bi12SiO20 piezoelectric crystal

    NASA Astrophysics Data System (ADS)

    Anisimkin, V. I.

    2016-03-01

    The orientation dependences of the phase velocity, the effective electromechanical coupling coefficient, and the angle between the wave normal and the energy flux vector are numerically calculated for zeroand first-order Lamb waves propagating in the (001) basal plane of a Bi12SiO20 cubic piezoelectric crystal. It is shown that the anisotropies of these modes are different and depend on the plate thickness h and the wavelength λ. For h/λ < 1, the mode anisotropy can exceed the anisotropy of the corresponding characteristics of surface acoustic waves propagating in the same plane; for h/λ > 1, it approximately coincides with the SAW anisotropy for all the characteristics.

  16. Yb:Lu2SiO5 crystal : characterization of the laser emission along the three dielectric axes

    NASA Astrophysics Data System (ADS)

    Toci, Guido; Pirri, Angela; Beitlerova, Alena; Shoji, Yasuhiro; Yoshikawa, Akira; Hybler, Jiri; Nikl, Martin; Vannini, Matteo

    2015-05-01

    Yb:doped Lu2SiO5 (Lutetium orthosilicate, LSO) is an optically biaxial crystal with laser emission in the range 1000- 1100 nm. It features different absorption and emission spectra for polarization along its three dielectric axes. In this work we have characterized the laser emission properties of Yb:LSO along all the three dielectric axis, evidencing differences that can be exploited in the design of ultrafast laser sources. The material was tested in a longitudinally pumped laser cavity. The laser emission efficiency was found similar along all the three dielectric axes, with slope efficiencies around 90% in most cases. Regarding the tuning range, for the most favourable polarization direction we obtained a continuously tunable emission between 993 and 1088 nm (i. e. 95 nm) peaked at 1040 nm. The tuning curves along the three dielectric axes spanned similar ranges but with relevant differences in the shape.

  17. Gompertz type dechanneling functions for protons in <1 0 0>, <1 1 0> and <1 1 1> Si crystal channels

    NASA Astrophysics Data System (ADS)

    Petrović, S.; Erić, M.; Kokkoris, M.; Nešković, N.

    2007-03-01

    In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters for protons in <1 0 0>, <1 1 0> and <1 1 1> Si crystal channels is investigated theoretically. The proton energy range considered is between 1 and 10 MeV. The original dechanneling functions are generated using a realistic Monte Carlo computer simulation code. We show that the Gompertz type dechanneling function, having two parameters, lc and k, representing the dechanneling range and rate, respectively, approximate accurately the original dechanneling function. It is also shown that the energy dependences of parameters lc and k can be approximated by a linear function and a sum of two exponential functions, respectively. The results obtained can be used for accurate reproduction of experimental proton channeling spectra recorded in the backscattering geometry.

  18. Formation and crystallization of silicon nanoclusters in SiN{sub x}:H films using femtosecond pulsed laser annealings

    SciTech Connect

    Korchagina, T. T. Volodin, V. A.; Chichkov, B. N.

    2010-12-15

    SiN{sub x}:H films of different compositions grown on glass and silicon substrates using plasma-chemical vapor deposition at a temperature of 380 deg. C have been subjected to pulsed laser annealings. The treatments are performed using titanium-sapphire laser radiation with a wavelength of 800 nm and a pulse duration of 30 fs. Structural changes in the films are studied using Raman spectroscopy. Amorphous silicon nanoclusters are detected in as-grown films with molar fractions of excess silicon of {approx}1/5 and larger. Conditions required for pulsed crystallization of nanoclusters were determined. According to the Raman data, no silicon clusters were detected in as-grown films with a small amount of excess silicon (x > 1.25). Pulsed treatments resulted in the formation of silicon nanoclusters 1-2 nm in size in these films.

  19. Hydrothermal synthesis and the crystal structure of borate cancrinite (Na,Ca){sub 2}[Na{sub 6}(AlSiO{sub 4}){sub 6}](BO{sub 3}) . 2H{sub 2}O

    SciTech Connect

    Shirinova, A. F. Khrustalev, V. N.; Samedov, H. R.; Chiragov, M. I.

    2006-01-15

    Transparent prismatic single crystals of borate cancrinite (Na,Ca){sub 2}[Na{sub 6}(AlSiO{sub 4}){sub 6}](BO{sub 3}) . 2H{sub 2}O are prepared through hydrothermal crystallization. The parameters of the hexagonal unit cell and intensities of 10806 reflections are measured on an Enraf-Nonius CAD4 automated diffractometer. The compound crystallizes in the hexagonal crystal system with the unit cell parameters a = 12.745(4) A, c = 5.180(2) A, V = 728.6(4) A{sup 3}, and space group P6{sub 3}. The structure is determined by direct methods and refined using the full-matrix least-squares procedure in the anisotropic approximation for the non-hydrogen atoms. The refinement of the structure is performed to the final discrepancy factor R{sub 1} = 0.027 for 2889 unique reflections with I > 2 {sigma} (I). In the structure of the borate cancrinite, the AlO{sub 4} and SiO{sub 4} tetrahedra form a zeolite-like framework in which twelve-membered hexagonal channels are occupied by sodium atoms and BO{sub 3} groups, whereas six-membered channels are filled with sodium and calcium atoms and water molecules. The mean interatomic distances are found to be as follows: (Si-O){sub mean} = 1.614 A and (Al-O){sub mean} = 1.741 A in the AlO{sub 4} and SiO{sub 4} tetrahedra, (Na-O){sub mean} = 2.542 A in the seven-vertex sodium polyhedra, and [(Na,Ca)-O]{sub mean} = 2.589 A in the ditrigonal bipyramids.

  20. Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond: evaluation of efficiency of Si doping from gas phase

    NASA Astrophysics Data System (ADS)

    Ralchenko, Victor; Sedov, Vadim; Saraykin, Vladimir; Bolshakov, Andrey; Zavedeev, Evgeny; Ashkinazi, Evgeny; Khomich, Andrew

    2016-09-01

    Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4-H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10-3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond.

  1. Measuring the X-ray Resolving Power of Bent Potassium Acid Phthalate Diffraction Crystals

    SciTech Connect

    Haugh, M. J.; Wu, M.; Jacoby, K. D.; Loisel, G. P.

    2014-11-01

    This report presents the results from measuring the X-ray resolving power of a curved potassium acid phthalate (KAP(001)) spectrometer crystal using two independent methods. It is part of a continuing effort to measure the fundamental diffraction properties of bent crystals that are used to study various characteristics of high temperature plasmas. Bent crystals like KAP(001) do not usually have the same diffraction properties as corresponding flat crystals. Models that do exist to calculate the effect of bending the crystal on the diffraction properties have simplifying assumptions and their accuracy limits have not been adequately determined. The type of crystals that we measured is being used in a spectrometer on the Z machine at Sandia National Laboratories (SNL) in Albuquerque, NM. The first technique for measuring the crystal resolving power measures the X-ray spectral line width of the characteristic lines from several metal anodes. The second method uses a diode X-ray source and a dual goniometer arrangement to measure the reflectivity curve of the KAP(001) crystal. The width of that curve is inversely proportional to the crystal resolving power. The measurement results are analyzed and discussed.

  2. Crystal structures of (Mg1;#8722;x,Fex)SiO[subscript 3] postperovskite at high pressures

    SciTech Connect

    Yamanaka, Takamitsu; Hirose, Kei; Mao, Wendy L.; Meng, Yue; Ganesh, P.; Shulenburger, Luke; Shen, Guoyin; Hemley, Russell J.

    2012-03-15

    X-ray diffraction experiments on postperovskite (ppv) with compositions (Mg{sub 0.9}Fe{sub 0.1})SiO{sub 3} and (Mg{sub 0.6}Fe{sub 0.4})SiO{sub 3} at Earth core-mantle boundary pressures reveal different crystal structures. The former adopts the CaIrO{sub 3}-type structure with space group Cmcm, whereas the latter crystallizes in a structure with the Pmcm (Pmma) space group. The latter has a significantly higher density ({rho} = 6.119(1) g/cm{sup 3}) than the former ({rho} = 5.694(8) g/cm{sup 3}) due to both the larger amount of iron and the smaller ionic radius of Fe{sup 2+} as a result of an electronic spin transition observed by X-ray emission spectroscopy (XES). The smaller ionic radius for low-spin compared to high-spin Fe{sup 2+} also leads to an ordered cation distribution in the M1 and M2 crystallographic sites of the higher density ppv structure. Rietveld structure refinement indicates that approximately 70% of the total Fe{sup 2+} in that phase occupies the M2 site. XES results indicate a loss of 70% of the unpaired electronic spins consistent with a low spin M2 site and high spin M1 site. First-principles calculations of the magnetic ordering confirm that Pmcm with a two-site model is energetically more favorable at high pressure, and predict that the ordered structure is anisotropic in its electrical and elastic properties. These results suggest that interpretations of seismic structure in the deep mantle need to treat a broader range of mineral structures than previously considered.

  3. Rotation rate measurement and calculation for calcite crystals in a C-point mode

    NASA Astrophysics Data System (ADS)

    Herne, Catherine M.; O'Brien, Ann E.

    2016-09-01

    A polarization singularity mode offers a unique tool for actuating an array of birefringent calcite crystals, and measurement of the rotation rates of these crystals is in turn a way to image modes with varying polarization. In this work, we show the calculated and measured rotation rates of individual calcite crystals in a C-point mode and their dependence on three key factors: polarization, mode intensity profile, and crystal size. The C-point is a polarization singularity mode in which the mode has a circularly polarized center surrounded by elliptically polarized regions, with the orientation of the ellipse varying azimuthally and the degree of ellipticity changing radially. The beam is focused into an optical trapping region, and micron-sized birefringent calcite crystals in solution are positioned at key points in the mode. The crystals experience different torques at each location. The spin angular momentum of the light is proportional to the degree of ellipticity and to the intensity at each point in the mode. Our technique for generating C-point modes results in an intensity profile with a nonlinear radial dependence. Our crystal growth process generates crystals of varying width and thickness; the crystal size and shape affect the drag forces and light torque acting on them. We explain the crystal growth process and estimations of torque, demonstrate the rate and direction of rotation of calcite crystals placed at different points in the laser mode, and discuss the difference between the estimated and measured rotation rates.

  4. Crystal Monochromator based Emittance Measurements at the PETRA Undulator Beamline

    NASA Astrophysics Data System (ADS)

    Hahn, U.; Schulte-Schrepping, H.

    2004-05-01

    The synchrotron radiation beamline at the PETRA storage ring at DESY with two end stations uses a 4 m-long undulator delivering hard X-ray photons up to 300 keV at a storage ring energy of 12 GeV. The spatial photon intensity distribution at the first undulator harmonic (21.23 keV) was used to determine the horizontal emittance of the storage ring. The set-up installed at 107.7 m from the source point consists of a vacuum chamber with a cryogenically cooled silicon crystal in Laue geometry. The monochromatized radiation is converted to visible light by a fluorescent screen on the back of an aluminum plate and observed by a digital camera. Gaussian fits to horizontal lines through the centre of mass of the images provide the standard deviations of the measured intensity distributions in the horizontal plane. The corresponding emittance values were derived by modeling the whole setup with the SPECTRA code using the emittance as a free parameter and by using machine physics formulas neglecting photon source size effects.

  5. Measurement of MTFs for monochrome and color liquid crystal displays

    NASA Astrophysics Data System (ADS)

    Horii, Akiko; Takamura, Miho; Ichikawa, Katsuhiro; Kodera, Yoshie; Ikeda, Mitsuru; Ishigaki, Takeo

    2006-03-01

    We measured modulation transfer functions (MTFs) of liquid crystal displays (LCDs) by rectangular waveform analysis. This method is taking a picture of the bar pattern on the monitor surface with a digital camera, and analyzing the picture with a personal computer. The monitors used are the monochrome LCDs of 1M(about 1 million of the number of pixels), 2M, 3M, and 5M, and the color LCDs of 1M, 2M, 3M. The display of 2M used IPS system and VA system. 3M and 5M of the monochrome LCDs were examined when there was a protective filter or not. Two or three displays are used for each system. In both the monochrome and the color LCDs, MTFs became high as the matrix size increased. In the monochrome LCDs, MTF in horizontal direction was higher than MTF in vertical direction. And there was no difference when a protective filter was used or not. MTFs of the color LCDs had little difference in horizontal direction and the vertical direction. MTFs of the LCDs are influenced on the form and the fill factor of a pixel, and composition of sub-pixels.

  6. Simulation and Measurement of Absorbed Dose from 137 Cs Gammas Using a Si Timepix Detector

    NASA Technical Reports Server (NTRS)

    Stoffle, Nicholas; Pinsky, Lawrence; Empl, Anton; Semones, Edward

    2011-01-01

    The TimePix readout chip is a hybrid pixel detector with over 65k independent pixel elements. Each pixel contains its own circuitry for charge collection, counting logic, and readout. When coupled with a Silicon detector layer, the Timepix chip is capable of measuring the charge, and thus energy, deposited in the Silicon. Measurements using a NIST traceable 137Cs gamma source have been made at Johnson Space Center using such a Si Timepix detector, and this data is compared to simulations of energy deposition in the Si layer carried out using FLUKA.

  7. Evolving Planck Constant Measurements into the SI Kilogram Standard

    NASA Astrophysics Data System (ADS)

    Steiner, Richard

    2012-02-01

    This is a very brief 100 year history of measuring 2e/h (pre-and post-Josephson), with a little on e^2/h (quantum Hall Effect, QHE), and then on to a direct measure of Planck constant h, where the watt balance technique combines four basic standards, i.e., physical constants of time, length, voltage, and resistance into a mass redefinition. There are parallels between old and new controversies. In the 1970's and 80's the controversy was in the changeover from standard cells to the Josephson effect as voltage reference. A slightly similar and briefer one concerned the ohm and QHE. Today's discussion is about changing definitions from an artifact mass standard to the Planck constant (or Avogadro constant) using the different methods as realization. The mass redefinition concerns are two orders of magnitude down from those of voltage, and the discrepancies between h are probably more systemic rather than artifact related (or not) as compared to the Josephson effect testing. This shows how far electronic metrology has progressed but also that is it not completed research. The conclusion summarizes the latest efforts on the watt balances.

  8. Crystal structure, characterization and thermoelectric properties of the type-I clathrate Ba{sub 8-y}Sr{sub y}Al{sub 14}Si{sub 32} (0.6{<=}y{<=}1.3) prepared by aluminum flux

    SciTech Connect

    Roudebush, John H.; Toberer, Eric S.; Hope, Hakon; Jeffrey Snyder, G.; Kauzlarich, Susan M.

    2011-05-15

    The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3-bar n. Electron microprobe characterization indicates the composition to be Ba{sub 8-y}Sr{sub y}Al{sub 14.2(2)}Si{sub 31.8(2)} (0.77crystal X-ray diffraction data (90 and 12 K) were refined with the Al content fixed at the microprobe value (12 K data: R{sub 1}=0.0233, wR{sub 2}=0.0441) on a crystal of compositions Ba. The Sr atom preferentially occupies the 2a position; mixed Al/Si occupancy was found on all framework sites. These refinements are consistent with a fully occupied framework and nearly fully occupied cation guest sites as found by microprobe analysis. Temperature dependent electrical resistivity and thermal conductivity have been measured from room temperature to 1200 K on a hot-pressed pellet. Electrical resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers. Thermal conductivity is between 22 and 25 mW/cm K. The sample shows n-type conductivity with a maximum figure of merit, zT of 0.3 at 1200 K. A single parabolic band model predicts a five-fold increase in zT at 800 K if carrier concentration is lowered. -- Graphical abstract: The inorganic type-I clathrate phase with nominal composition Ba{sub 7}Sr{sub 1}Al{sub 14}Si{sub 32} has been prepared by Al flux. Single crystal diffraction at 90 and 12 K reveal that the framework is fully occupied with the cation sites nearly fully occupied. The lattice thermal conductivity is low thereby suggesting further optimization of the carrier concentration will lead to a high zT. Display Omitted Highlights: {yields} Ba{sub 7}Sr{sub 1}Al{sub 14}Si{sub 32} is a light element phase ideal for thermoelectric power generation. {yields} Ba{sub 7}Sr{sub 1}Al{sub 14}Si{sub 32} is a high melting point cubic

  9. Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-type dopants in Si crystal

    NASA Astrophysics Data System (ADS)

    Zhao, Mingshu; Dong, Juncai; Chen, Dongliang

    2017-02-01

    Doping is widely applied in yielding desirable properties and functions in silicon technology; thus, fully understanding the relaxation mechanism for lattice-mismatch strain is of fundamental importance. Here we systematically study the local lattice distortion near dilute IIIA-, IVA-, and VA-group substitutional dopants in Si crystal using density functional theory, and anomalous radial and angular strain relaxation modes are first revealed. Both the nearest-neighbor (NN) bond-distances and the tetrahedral bond-angles are found to exhibit completely opposite dependence on the electronic configurations for the low Z (Z<26) and high Z (Z>26) dopants. More surprisingly, negative and positive angular shifts for the second NN twelve Si2 atoms are unveiled surrounding the p- and n-type dopants, respectively. While electron localization function shows that the doped hole and electron are highly localized near the dopants, hence being responsible for the abnormal angular shifts, a universal radial strain relaxation mechanism dominated by a competition of the Coulomb interactions among the ion-core, bond-charge, and the localized hole or electron is also proposed. These findings may prove to be instrumental in precise design of silicon-based solotronics.

  10. Thermodynamic analysis of binary Fe85B15 to quinary Fe85Si2B8P4Cu1 alloys for primary crystallizations of α-Fe in nanocrystalline soft magnetic alloys

    NASA Astrophysics Data System (ADS)

    Takeuchi, A.; Zhang, Y.; Takenaka, K.; Makino, A.

    2015-05-01

    Fe-based Fe85B15, Fe84B15Cu1, Fe82Si2B15Cu1, Fe85Si2B12Cu1, and Fe85Si2B8P4Cu1 (NANOMET®) alloys were experimental and computational analyzed to clarify the features of NANOMET that exhibits high saturation magnetic flux density (Bs) nearly 1.9 T and low core loss than conventional nanocrystalline soft magnetic alloys. The X-ray diffraction analysis for ribbon specimens produced experimentally by melt spinning from melts revealed that the samples were almost formed into an amorphous single phase. Then, the as-quenched samples were analyzed with differential scanning calorimeter (DSC) experimentally for exothermic enthalpies of the primary and secondary crystallizations (ΔHx1 and ΔHx2) and their crystallization temperatures (Tx1 and Tx2), respectively. The ratio ΔHx1/ΔHx2 measured by DSC experimentally tended to be extremely high for the Fe85Si2B8P4Cu1 alloy, and this tendency was reproduced by the analysis with commercial software, Thermo-Calc, with database for Fe-based alloys, TCFE7 for Gibbs free energy (G) assessments. The calculations exhibit that a volume fraction (Vf) of α-Fe tends to increase from 0.56 for the Fe85B15 to 0.75 for the Fe85Si2B8P4Cu1 alloy. The computational analysis of the alloys for G of α-Fe and amorphous phases (Gα-Fe and Gamor) shows that a relationship Gα-Fe ˜ Gamor holds for the Fe85Si2B12Cu1, whereas Gα-Fe < Gamor for the Fe85Si2B8P4Cu1 alloy at Tx1 and that an extremely high Vf = 0.75 was achieved for the Fe85Si2B8P4Cu1 alloy by including 2.8 at. % Si and 4.5 at. % P into α-Fe. These computational results indicate that the Fe85Si2B8P4Cu1 alloy barely forms amorphous phase, which, in turn, leads to high Vf and resultant high Bs.

  11. Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon.

    PubMed

    Kail, F; Molera, J; Farjas, J; Roura, P; Secouard, C; Roca i Cabarrocas, P

    2012-03-07

    The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 °C and 1.7 eV, respectively, the 'standard' values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.

  12. Measurements of Si Hybrid CMOS X-Ray Detector Characteristics

    NASA Astrophysics Data System (ADS)

    Bongiorno, Stephen; Falcone, A.; Burrows, D.; Cook, R.

    2010-01-01

    The development of Hybrid CMOS Detectors (HCDs) for X-Ray telescope focal planes will place them in contention with CCDs on future satellite missions due to their faster frame rates, flexible readout scenarios, lower power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels with low power, on-chip multiplexer electronics in a random access fashion. Faster frame rates, achieved with multi-output readout design, will allow the next generation's larger effective area telescopes to observe bright sources free of pileup. Radiation damaged lattice sites effect a single pixel instead of an entire row. Random access, multi-output readout will allow for novel readout modes such as simultaneous bright-source-fast/whole-chip-slow readout. In order for HCDs to become useful X-Ray detectors, they must show noise and energy resolution performance similar to CCDs while retaining advantages inherent to HCDs. We will report on readnoise, conversion gain, and energy resolution measurements of X-Ray enhanced Teledyne HAWAII-1RG (H1RG) HCDs and describe techniques of H1RG data reduction.

  13. Measurements of Si hybrid CMOS x-ray detector characteristics

    NASA Astrophysics Data System (ADS)

    Bongiorno, Stephen D.; Falcone, Abe D.; Burrows, David N.; Cook, Robert; Bai, Yibin; Farris, Mark

    2009-08-01

    The development of Hybrid CMOS Detectors (HCDs) for X-Ray telescope focal planes will place them in contention with CCDs on future satellite missions due to their faster frame rates, flexible readout scenarios, lower power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels with low power, on-chip multiplexer electronics in a random access fashion. Faster frame rates achieved with multi-output readout design will allow the next generation's larger effective area telescopes to observe bright sources free of pileup. Radiation damaged lattice sites effect a single pixel instead of an entire row. Random access, multi-output readout will allow for novel readout modes such as simultaneous bright-source-fast/whole-chip-slow readout. In order for HCDs to be useful as X-Ray detectors, they must show noise and energy resolution performance similar to CCDs while retaining advantages inherent to HCDs. We will report on readnoise, conversion gain, and energy resolution measurements of an X-Ray enhanced Teledyne HAWAII-1RG (H1RG) HCD and describe techniques of H1RG data reduction.

  14. Transport Measurements on Si Nanostructures with Counted Sb Donors

    NASA Astrophysics Data System (ADS)

    Singh, Meenakshi; Bielejec, Edward; Garratt, Elias; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

    2014-03-01

    Donor based spin qubits are a promising platform for quantum computing. Single qubits using timed implant of donors have been demonstrated.1 Extending this to multiple qubits requires precise control over the placement and number of donors. Such control can be achieved by using a combination of low-energy heavy-ion implants (to reduce depth straggle), electron-beam lithography (to define position), focused ion beam (to localize implants to one lithographic site) and counting the number of implants with a single ion detector.2 We report transport measurements on MOS quantum dots implanted with 5, 10 and 20 Sb donors using the approach described above. A donor charge transition is identified by a charge offset in the transport characteristics. Correlation between the number of donors and the charge offsets is studied. These results are necessary first steps towards fabricating donor nanostructures for two qubit interactions. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. 1J. J. Pla et al., Nature 496, 334 (2013) 2J. A. Seamons et al., APL 93, 043124 (2008).

  15. Pulsed and cw lasing in a new Cr{sup 3+}:Li:Mg{sub 2}SiO{sub 4} laser crystal

    SciTech Connect

    Gaister, A V; Zharikov, Evgeny V; Shcherbakov, Ivan A; Lebedev, V F; Tenyakov, S Yu; Podstavkin, A S; Shestakov, A V

    2004-08-31

    CW and pulsed lasing is obtained for the first time in Cr{sup 3+} ions in a forsterite (Mg{sub 2}SiO{sub 4}) crystal codoped with lithium ions. Pulsed lasing is tunable in the spectral range from 1030 to 1180 nm. (lasers)

  16. Revealing unusual chemical bonding in planar hyper-coordinate Ni2Ge and quasi-planar Ni2Si two-dimensional crystals.

    PubMed

    Yang, Li-Ming; Popov, Ivan A; Frauenheim, Thomas; Boldyrev, Alexander I; Heine, Thomas; Bačić, Vladimir; Ganz, Eric

    2015-10-21

    We discover unusual chemical bonding in a novel planar hyper-coordinate Ni2Ge free-standing 2D monolayer, and also in a nearly planar slightly buckled Ni2Si monolayer. This unusual bonding is revealed by Solid State Adaptive Natural Density Partitioning analysis. This analysis shows that a new type of 2c-2e Ni-Si σ and 3c-2e Ni-Ge-Ni σ bonds stabilize these 2D crystals. This is completely different from any previously known 2D crystals. Both of these free-standing monolayers are global minima in two-dimensional space. Although their exotic structure has unprecedented chemical bonding, they show extraordinary stability as single layers. The stabilities of these frameworks are confirmed by phonon dispersion calculations and ab initio molecular dynamics calculations. For Ni2Si, the framework was maintained during short 10 ps molecular dynamics annealing up to 1500 K, while Ni2Ge survived 10 ps runs up to 900 K. Both systems are predicted to be non-magnetic and metallic. As these new 2D crystals contain hypercoordinated Group 14 atoms, they are examples of a new class of 2D crystals with unconventional chemical bonding and potentially exciting new properties. Interestingly, we find that the stabilities of Ni2Si and Ni2Ge are much higher than that of silicene and germanene. Thus, this work provides a novel way to stabilize 2D sheets of Group 14 elements.

  17. A visual and organic vapor sensitive photonic crystal sensor consisting of polymer-infiltrated SiO2 inverse opal.

    PubMed

    Zhang, Yuqi; Qiu, Jianhua; Hu, Rongrong; Li, Pei; Gao, Loujun; Heng, Liping; Tang, Ben Zhong; Jiang, Lei

    2015-04-21

    A photonic crystal (PC) sensor that can selectively detect organic vapors through visual color changes has been proposed. The sensor was fabricated by infiltrating a tetraphenylethene polymer (TPEP) into the voids of SiO2 inverse opal photonic crystal. When the sensor was exposed to tetrahydrofuran or acetone vapor, a red shift of the stopband of more than 50 nm could be clearly observed; meanwhile, the film's color changed from violet to cyan. Subsequently, when exposed to air, the stopband underwent a blue shift and the color returned to violet. The reason for the observed change is that a reversible adsorption-desorption process occurs on alternate exposure of the sensor to organic vapor and air, due to the high specific surface area of the inverse opal macroporous structure and the high affinity of TPEP to tetrahydrofuran and acetone. The adsorption of vapor analyte can increase the PC's effective refractive index, which will induce the stopband red shift and the resulting color change according to Bragg's Law. The reversible adsorption-desorption of organic vapors varied the effective refractive index of the sensor repeatedly, causing the reversible stopband shift and color change, and providing a general method for the design of visual vapor sensors.

  18. Crystallization behavior and properties of BaO-Al2O3-2SiO2 glass matrices

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III; Bansal, Narottam P.

    1990-01-01

    Glass of stoichiometric celsian composition, BaO-Al2O3-SiO2, has a density of 3.39 g/cu cm, a thermal expansion coefficient of 6.6 x 10 to the -6th/C, a glass-transition temperature of 910 C, and a dilatometric softening point of 925 C. On heat treatment, only hexacelsian crystallized out on the surface, but both celsian and hexacelsian were present in the bulk. Effects of cold isostatic pressing (CIP), sintering, and hot-pressing, in the presence and absence of an additive, on the formation of the celsian phase in the glass have been studied. CIP'd samples, after appropriate heat treatments, always crystallized out as celsian, whereas presence of 5-10 wt pct of an additive was necessary for formation of celsian in sintered as well as hot-pressed specimens. Green density increased with CIP'ing pressure but had no effect on sintered density. Hot-pressing resulted in fully dense samples.

  19. Crystallization behavior and properties of BaO-Al2O3-2SiO2 glass matrices

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III; Bansal, Narottam P.

    1990-01-01

    Glass of stoichiometric celsian composition, BaO-Al2O3-2SiO2, is a potential glass-ceramic matrix for high-temperature composites. The glass has a density of 3.39 g/cu cm, thermal expansion coefficient of 6.6 x 10(exp -6)/deg C glass transition temperature of 910 C, and dilatometric softening point of 925 C. On heat treatment, only hexacelsian crystallized out on the surface, but both celsian and hexacelsian were present in the bulk. Effects of cold isostatic pressing (CIP), sintering, and hot pressing, in the presence and absence of an additive, on the formation of the celsian phase in the glass were studied. CIP'ed samples, after appropriate heat treatments, always crystallized out as celsian whereas the presence of 5 to 10 weight percent of an additive was necessary for formation of celsian in sintered as well as hot pressed specimens. Green density increased with CIP'ing pressure but had no effect on sintered density. Hot pressing resulted in fully dense samples.

  20. Spin alignment and density matrix measurement in sup 28 Si + sup 12 C orbiting reaction

    SciTech Connect

    Ray, A.; Shapira, D.; Halbert, M.L.; Gomez del Campo, J.; Kim, H.J. ); Sullivan, J.P. . Cyclotron Inst.); Shivakumar, B.; Mitchell, J. . Wright Nuclear Structure Lab.)

    1990-01-01

    Gamma-ray angular correlations have been measured for the strongly damped reactions {sup 12}C({sup 28}Si,{sup 12}C){sup 28}Si between {theta}{sub cm} = (120{degree} {minus} 160{degree}) for E{sub cm} = 43.5 and 48 MeV. We find that the density matrices for the {sup 12}C(2{sub 1}{sup +}) and {sup 28}Si states are almost diagonal with respect to the direction of motion of the outgoing particle. The measured density matrices and spin alignments are consistent with the picture of formation of a long-lived dinuclear complex undergoing orbiting, bending and wriggling motions, but not with those obtained from statistical compound nucleus or sticking model calculations. 17 refs., 2 figs., 1 tab.

  1. Precise half-life measurement of the superallowed {beta}{sup +} emitter {sup 26}Si

    SciTech Connect

    Iacob, V. E.; Hardy, J. C.; Banu, A.; Chen, L.; Golovko, V. V.; Goodwin, J.; Horvat, V.; Nica, N.; Park, H. I.; Trache, L.; Tribble, R. E.

    2010-09-15

    We measured the half-life of the superallowed 0{sup +{yields}}0{sup +} {beta}{sup +} emitter {sup 26}Si to be 2245.3(7) ms. We used pure sources of {sup 26}Si and employed a high-efficiency gas counter, which was sensitive to positrons from both this nuclide and its daughter {sup 26}Al{sup m}. The data were analyzed as a linked parent-daughter decay. To contribute meaningfully to any test of the unitarity of the Cabibbo-Kobayashi-Maskawa (CKM) matrix, the ft value of a superallowed transition must be determined to a precision of 0.1% or better. With a precision of 0.03%, the present result is more than sufficient to be compatible with that requirement. Only the branching ratio now remains to be measured precisely before a {+-}0.1% ft value can be obtained for the superallowed transition from {sup 26}Si.

  2. Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

    NASA Astrophysics Data System (ADS)

    Hatakeyama, Tetsuo; Kiuchi, Yuji; Sometani, Mitsuru; Harada, Shinsuke; Okamoto, Dai; Yano, Hiroshi; Yonezawa, Yoshiyuki; Okumura, Hajime

    2017-04-01

    The effects of nitridation on the density of traps at SiO2/SiC interfaces near the conduction band edge were qualitatively examined using a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance–voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge as a result of nitridation, but the interface traps were not completely eliminated by nitridation.

  3. Ostwald-Meyers Metastable Region in LiBr Crystallization-Comparison of Measurements with Predictions.

    PubMed

    Duvall, Kristin N.; Dirksen, James A.; Ring, Terry A.

    2001-07-15

    Experiments have been performed to measure the Ostwald-Meyers metastable region during crystallization from concentrated LiBr solutions. Solution thermodynamics shows that several hydrated LiBr salts and ice can crystallize depending upon the concentration of LiBr in aqueous solution. The available solubility data were interpreted to give solubility products of several hydrated LiBr salts using the formulation of Helgeson, which accounts for the activity of water. The crystallization temperature was measured by monitoring to +/-0.01 degrees C the temperature of solutions inside test tubes placed in a cooling bath programmed at a cooling rate of 20 degrees C/h. A release of the heat of crystallization identifies the temperature of crystallization. The equilibrium solubility was verified by crystallization with seed crystals present. The crystallization temperature without seeds present was 10 to 20 degrees C less than the equilibrium solubility temperature corresponding to the Ostwald-Meyers metastable region. This crystallization temperature measured at 20 degrees C/h was shown to correspond to nucleation on the surface of the test tube with an interface energy of 40+/-1.2 erg/cm(2). Homogeneous nucleation from solution data shows the crystallization temperature to be from 40 to 50 degrees C below the equilibrium solubility curve and to be accurately predicted by homogeneous nucleation with an interface energy of 26 erg/cm(2), the literature value of the ice/water interface. Since the hydrated LiBr salts have surfaces that expose structured water molecules to the solution, this value is believed to be an appropriate value of the interface energy of the hydrated LiBr crystals. Crystallization temperature measurements were performed at different cooling rates, showing that slower cooling rates gave a narrower Ostwald-Myers metastable zone as is expected. Induction time measurements showed that the time to spontaneous crystallization increases as the supersaturation

  4. Colors Of Liquid Crystals Used To Measure Surface Shear Stresses

    NASA Technical Reports Server (NTRS)

    Reda, D. C.; Muratore, J. J., Jr.

    1996-01-01

    Developmental method of mapping shear stresses on aerodynamic surfaces involves observation, at multiple viewing angles, of colors of liquid-crystal surface coats illuminated by white light. Report describing method referenced in "Liquid Crystals Indicate Directions Of Surface Shear Stresses" (ARC-13379). Resulting maps of surface shear stresses contain valuable data on magnitudes and directions of skin friction forces associated with surface flows; data used to refine mathematical models of aerodynamics for research and design purposes.

  5. Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Wang, K. L.; Zwerdling, S.

    1982-01-01

    Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

  6. New orthorhombic derivative of CaCu5-type structure: RNi4Si compounds (R=Y, La, Ce, Sm, Gd-Ho), crystal structure and some magnetic properties

    NASA Astrophysics Data System (ADS)

    Morozkin, A. V.; Knotko, A. V.; Yapaskurt, V. O.; Yuan, Fang; Mozharivskyj, Y.; Nirmala, R.

    2013-12-01

    The crystal structure of new YNi4Si-type RNi4Si (R=Y, La, Ce, Sm, Gd-Ho) compounds has been established using powder X-ray diffraction. The YNi4Si structure is a new structure type, which is orthorhombic derivative of CaCu5-type structure (space group Cmmm N 65, oC12).

  7. Influence of the Ca/Si ratio of the C–S–H phase on the interaction with sulfate ions and its impact on the ettringite crystallization pressure

    SciTech Connect

    Kunther, Wolfgang; Lothenbach, Barbara

    2015-03-15

    The effect of the Ca/Si ratio of the calcium–silicate–hydrate (C–S–H) phase on the interaction with sulfate ions is investigated for C–S–H phases (Ca/Si = 0.83, 1.25, 1.50) and mortar samples of blended Portland cements. It is shown that leaching of calcium from C–S–H and portlandite affects the composition of the pore solution and contributes to the developing crystallization pressure of ettringite. Sulfate profiles show that sulfate binding before cracking is similar for different Ca/Si ratios whereas the highest expansion rates are observed for the mortars with the highest Ca/Si ratios. After leaching in sulfate solutions, the C–S–H samples have been characterized by {sup 29}Si MAS NMR, thermogravimetric analysis, and elemental solution analysis. Generally, the exposure to sulfate solutions results in decalcification of the C–S–H, which increases with decreasing Ca/Si ratio. The data are in good agreement with thermodynamic modeling, indicating that equilibrium is almost achieved in the leached systems. Finally, the expansion of mortar samples exposed to sulfate solutions was much less at lower Ca/Si ratios of the cement blends. This reduced expansion can be related to the decrease of the supersaturation of the pore solution with respect to ettringite at lower Ca/Si ratios of the C–S–H and in the absence of portlandite.

  8. Crystal field energy levels, spin-Hamiltonian parameters and local structures for the Cr3+ and Mn4+ centers in La3Ga5SiO14 crystals

    NASA Astrophysics Data System (ADS)

    Mei, Yang; Chen, Bo-Wei; Zheng, Wen-Chen; Li, Bang-Xing

    2017-02-01

    The crystal field energy levels (obtained from optical spectra) together with the spin-Hamiltonian parameters g//, g⊥ and D (obtained from EPR spectra) for 3d3 ions Cr3+ and Mn4+ at the trigonal octahedral Ga3+ sites in La3Ga5SiO14 crystals are computed from the complete diagonalization (of energy matrix) method based on the two-spin-orbit-parameter model. The model takes into account the contributions due to the spin-orbit parameter of central dn ion (in the traditional crystal field theory) and that of ligand ions via covalence effect. The calculated results are in rational accord with the experimental values. The calculations also imply that the covalence of (MnO6)8- center in La3Ga5SiO14 crystals is stronger than that of (CrO6)9- center, and the impurity-induced local lattice relaxation for (MnO6)8- center is larger than that for (CrO6)9- cluster because of the larger size and charge mismatch for Mn4+ replacing Ga3+ in La3Ga5SiO14 crystals.

  9. Integrated III-V Photonic CrystalSi waveguide platform with tailored optomechanical coupling

    PubMed Central

    Tsvirkun, Viktor; Surrente, Alessandro; Raineri, Fabrice; Beaudoin, Grégoire; Raj, Rama; Sagnes, Isabelle; Robert-Philip, Isabelle; Braive, Rémy

    2015-01-01

    Optomechanical systems, in which the vibrations of a mechanical resonator are coupled to an electromagnetic radiation, have permitted the investigation of a wealth of novel physical effects. To fully exploit these phenomena in realistic circuits and to achieve different functionalities on a single chip, the integration of optomechanical resonators is mandatory. Here, we propose a novel approach to heterogeneously integrate arrays of two-dimensional photonic crystal defect cavities on top of silicon-on-insulator waveguides. The optomechanical response of these devices is investigated and evidences an optomechanical coupling involving both dispersive and dissipative mechanisms. By controlling the optical coupling between the waveguide and the photonic crystal, we were able to vary and understand the relative strength of these couplings. This scalable platform allows for an unprecedented control on the optomechanical coupling mechanisms, with a potential benefit in cooling experiments, and for the development of multi-element optomechanical circuits in the framework of optomechanically-driven signal-processing applications. PMID:26567535

  10. A new approach for improved time and position measurements for TOF-PET: Time-stamping of the photo-electrons using analogue SiPMs

    NASA Astrophysics Data System (ADS)

    Doroud, K.; Williams, M. C. S.

    2017-03-01

    Measurement of the Time-of-Flight (TOF) of the 511 keV gammas brings an important reduction of statistical noise in the PET image, with higher precision time measurements producing clearer images. The common method of coupling a photodetector to scintillating crystals is to have two matching matrices, with a one-to-one coupling between the crystal and the photodetector. We propose a new geometry based on analogue strip SiPMs reading out a scintillator cut into slabs. This technique allows the time stamping of individual photo-electrons and extracts the best time resolution using a specific algorithm. Here we present the results from the first 'slab module' test.

  11. Geometrical spin frustration in Pr5Ni2Si3 composed of triangular crystal lattices

    NASA Astrophysics Data System (ADS)

    Min, B. H.; Hong, J. I.; Kwon, Y. S.

    2014-08-01

    We have studied the transport, magnetic and thermal properties of Pr5Ni2Si3 with complex triangular lattices under various magnetic fields. The ferromagnetic transitions in the basal plane were observed at TC1 = 52 K and TC2 = 65 K. A decrease in magnetization below 30 K and the reduced paramagnetic Curie temperature θP are indicative of the development of antiferromagnetic correlation. These features are well understood by the frustration effect of the magnetic moments of Pr ions which constitute the triangular structural unit. The frustration caused the rapid rise of electrical resistivity below 30 K and an enormous entropy in low-temperature regions. The antiferromagnetic correlation acting between the frustrated Pr ions never causes any long-range order down to 0.6 K.

  12. Realization of direct bonding of single crystal diamond and Si substrates

    NASA Astrophysics Data System (ADS)

    Liang, Jianbo; Masuya, Satoshi; Kasu, Makoto; Shigekawa, Naoteru

    2017-03-01

    Diamond/Si junctions have been achieved by surface activated bonding method without any chemical and heating treatments. Bonded interfaces were obtained that were free from voids and mechanical cracks. Observations by using transmission electron microscopy indicated that an amorphous layer with a thickness of ˜20 nm across the bonded interface was formed, and no structural defects were observed at the interface. The amorphous layer of the diamond side was confirmed to be the mixture of sp2 and sp3 carbons by electron energy loss spectroscopy analyzation. The sp3/(sp2 + sp3) ratio estimated from the X-ray photoemission spectra decreased from 53.8% to 27.5%, while the relative intensity of sp2 increased from 26.8% to 72.5% after the irradiation with Ar fast beam which should be predominantly attributable to the diamond-graphite conversion.

  13. Measurements of crystal growth kinetics at extreme deviations from equilibrium. Technical progress report, 1 September 1990--31 August 1991

    SciTech Connect

    Aziz, M.J.

    1992-07-14

    We have measured solute trapping of several solutes in Al and Ni during rapid solidification. We have also made preliminary measurements of solute trapping of As in Si, trapped 20 atomic percent As in Si, and made a preliminary measurement of the T{sub o} curve in Si-As. 5 figs.

  14. Focused beam reflectance measurement as a tool for in situ monitoring of the lactose crystallization process.

    PubMed

    Pandalaneni, K; Amamcharla, J K

    2016-07-01

    Lactose accounts for about 75 and 85% of the solids in whey and deproteinized whey, respectively. Production of lactose is usually carried out by a process called crystallization. Several factors including rate of cooling, presence of impurities, and mixing speed influence the crystal size characteristics. To optimize the lactose crystallization process parameters to maximize the lactose yield, it is important to monitor the crystallization process. However, efficient in situ tools to implement at concentrations relevant to the dairy industry are lacking. The objective of the present work was to use a focused beam reflectance measurement (FBRM) system for in situ monitoring of lactose crystallization at supersaturated concentrations (wt/wt) 50, 55, and 60% at 20 and 30°C. The FBRM data were compared with Brix readings collected using a refractometer during isothermal crystallization. Chord length distributions obtained from FBRM in the ranges of <50 µm (fine crystals) and 50 to 300 µm (coarse crystals) were recorded and evaluated in relation to the extent of crystallization and rate constants deduced from the refractometer measurements. Extent of crystallization and rate constants increased with increasing supersaturation concentration and temperature. The measured fine crystal counts from FBRM increased at higher supersaturated concentration and temperature during isothermal crystallization. On the other hand, coarse counts were observed to increase with decreasing supersaturated concentration and temperature. Square weighted chord length distribution obtained from FBRM showed that as concentration increased, a decrease in chord lengths occurred at 20°C and similar observations were made from microscopic images. The robustness of FBRM in understanding isothermal lactose crystallization at various concentrations and temperatures was successfully assessed in the study.

  15. Crystal chemistry and optical investigations of the Cu{sub 2}Zn(Sn,Si)S{sub 4} series for photovoltaic applications

    SciTech Connect

    Hamdi, Mohamed; Lafond, Alain; Guillot-Deudon, Catherine; Hlel, Faouzi; Gargouri, Mohamed; Jobic, Stéphane

    2014-12-15

    Different compounds in the Cu{sub 2}ZnSnS{sub 4}–Cu{sub 2}ZnSiS{sub 4} system have been prepared via ceramic route and structurally characterized via X-ray diffraction on powders and single crystals. Two solid solutions were identified along the Cu{sub 2}Zn(Sn,Si)S{sub 4} series. Namely, materials with Si-content x=Si/(Sn+Si) lower than 0.5 crystallize with the Cu{sub 2}ZnSnS{sub 4} kesterite structure type while materials with x higher than 0.8 adopt the Cu{sub 2}ZnSiS{sub 4} enargite structure type. In between, a miscibility gap occurs where the Cu{sub 2}ZnSn{sub 0.5}Si{sub 0.5}S{sub 4} and Cu{sub 2}ZnSn{sub 0.2}Si{sub 0.8}S{sub 4} compounds co-exist. The optical bandgap increases continuously with the Si content in the whole series. This opens up the possibility to fine tune the absorption threshold and to adjust it to 1.7 eV for x∼0.5, the optimum value for the top cell of tandem solar devises to achieve high photovoltaic conversion efficiency. - Graphical abstract: Two solid solutions have been pointed out in the Cu{sub 2}Zn(Sn{sub 1−x}Si{sub x})S{sub 4} series with the kesterite and the enargite type structures. - Highlights: • New compounds in Cu{sub 2}Zn(Sn,Si)S{sub 4} series have been prepared. • Two solid solutions Cu{sub 2}ZnSn{sub 1−x}Si{sub x}S{sub 4} were identified for x≤0.5 and x≥0.8. • In the miscibility gap 2 phases co-exist with kesterite and enargite structure types. • The optical bandgap increases continuously with the Si-content in the whole series. • These materials could be envisioned as absorber in thin-film solar cells.

  16. Integrated X-Ray Reflectivity Measurements for Elliptically Curved PET Crystals

    SciTech Connect

    Haugh, M J; Ross, P W; Regan, P W; Magoon, J; Shoup, M J; Barrios, M A; Emig, J A; Fournier, K B

    2012-04-26

    Spectroscopy provides valuable information about the temperature and density of a compressed pellet in a plasma. Elliptically curved pentaerythritol (PET) crystals are used as components for spectrometers. Their elliptical geometry gives several advantages related to spectral energy range, source focus, and spectral image compression.[1] The crystal curvature increases the spectrometer throughput but at the cost of a loss in resolution. Four different crystals are used in a spectrometer at the National Ignition Facility (NIF) target chamber at Lawrence Livermore National Laboratory (LLNL). Figure 1 shows the arrangement of the elliptical PET crystals in the snout of a NIF target diagnostic shown in Figure 2. The spectrum from the crystals is captured by four image plates located behind the crystals. A typical mandrel, the darkened section, upon which the PET crystal is glued, is shown in Figure 3, which also shows the complete ellipse. There are four elliptical segment types, each having the same major axis but a different minor axis. The crystals are 150 mm long in the diffraction direction and 25.4 mm high. Two crystals of each type were calibrated. The throughput for each spectrometer is determined by the integrated reflectivity of the PET crystal.[1] The goal of this effort was to measure the reflectivity curve of the PET curved crystal at several energies and determine the integrated reflectivity and the curve width as a function of the X-ray spectral energy and location on the ellipse where the beam strikes.

  17. A SiPM-based isotropic-3D PET detector X'tal cube with a three-dimensional array of 1 mm(3) crystals.

    PubMed

    Yamaya, Taiga; Mitsuhashi, Takayuki; Matsumoto, Takahiro; Inadama, Naoko; Nishikido, Fumihiko; Yoshida, Eiji; Murayama, Hideo; Kawai, Hideyuki; Suga, Mikio; Watanabe, Mitsuo

    2011-11-07

    We are developing a novel, general purpose isotropic-3D PET detector X'tal cube which has high spatial resolution in all three dimensions. The research challenge for this detector is implementing effective detection of scintillation photons by covering six faces of a segmented crystal block with silicon photomultipliers (SiPMs). In this paper, we developed the second prototype of the X'tal cube for a proof-of-concept. We aimed at realizing an ultimate detector with 1.0 mm(3) cubic crystals, in contrast to our previous development using 3.0 mm(3) cubic crystals. The crystal block was composed of a 16 × 16 × 16 array of lutetium gadolinium oxyorthosilicate (LGSO) crystals 0.993 × 0.993 × 0.993 mm(3) in size. The crystals were optically glued together without inserting any reflector inside and 96 multi-pixel photon counters (MPPCs, S10931-50P, i.e. six faces each with a 4 × 4 array of MPPCs), each having a sensitive area of 3.0 × 3.0 mm(2), were optically coupled to the surfaces of the crystal block. Almost all 4096 crystals were identified through Anger-type calculation due to the finely adjusted reflector sheets inserted between the crystal block and light guides. The reflector sheets, which formed a belt of 0.5 mm width, were placed to cover half of the crystals of the second rows from the edges in order to improve identification performance of the crystals near the edges. Energy resolution of 12.7% was obtained at 511 keV with almost uniform light output for all crystal segments thanks to the effective detection of the scintillation photons.

  18. Fracture toughness of Si3N4 measured with short bar chevron-notched specimens

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Shannon, John L., Jr.

    1987-01-01

    The short bar chevron-notched specimen is used to measure the plane strain fracture toughness of hot pressed Si3N4. Specimen proportions and chevron-notch angle are varied, thereby varying the amount of crack extension to maximum load (upon which K sub IC is based). The measured toughness (4.68 + or 0.19 MNm to the 3/2 power) is independent of these variations, inferring that the material has a flat crack growth resistance curve.

  19. Density Functional Theory Study of Bandgap Modulation of Si2N-h2D Crystal Nanoribbons and Nanotubes Under Elastic Strain

    NASA Astrophysics Data System (ADS)

    Ma, ShengQian; Li, Feng; Geng, JiGuo

    2017-04-01

    Since efficient synthesis of C2N holey two-dimensional (h2D) crystal has been possible, bandgap modulation through use of analogous nanoribbon and nanotube structures has attracted strong interest. In this study, bandgap modulation of Si2N-h2D nanoribbons and nanotubes under elastic strain has been deeply researched using density functional theory calculations. The results indicate that the bandgap of Si2N-h2D nanoribbons and nanotubes in zigzag and armchair configurations can be tuned in both directions, namely by stretching or compressing, in the range of ɛ = ( d - d 0)/ d 0 from -10% to 10%. It is also found that the bandgap of Si2N-h2D nanoribbons and nanotubes varies with their width. Therefore, it is predicted that Si2N-h2D nanoribbons and nanotubes have great potential for application in nanoscale strain sensors and optoelectronics.

  20. Comparative studies of glow peaks and kinetic trapping parameters of LiF(Mg,Cu), LiF(Mg,Cu,P), LiF(Mg,Cu,Si) and LiF(Mg,Cu,Na,Si) single crystals

    NASA Astrophysics Data System (ADS)

    Laopaiboon, R.; Bootjomchai, C.; Pencharee, S.; Laopaiboon, J.

    2014-02-01

    Glow curve structure and kinetic trapping parameter of the thermoluminescent (TL) phosphors based on LiF(Mg,Cu) LiF(Mg,Cu,P) LiF(Mg,Cu,Si) and LiF(Mg,Cu,Na,Si) single crystals were investigated (denoted as SMC, SMCP, SMCS and SMCNS, respectively). Wet mixing and drying before TL phosphors production in single-crystal form were achieved by the Bridgeman method. The transparent solid single crystals were cut to the size of 5.0×5.0×0.6 mm3 for use as thermoluminescence dosimeters (TLD). Four different types of TLD were irradiated with X-ray photon energy 128 keV in the dose of 3 mGy after dual step pre-irradiation annealing. From the glow curve structure, the geometrical factors (μ) were calculated. The graph created by Chen confirms the first-order kinetics. Moreover, the glow curve shape results in more fading of the TLD 100 sample than the SMCS and SMCNS samples. It is evident that the kinetic trapping parameters depend on the type of dopant. The frequency factors of all TLD single crystals are higher than TLD100 (poly-crystal). These results are useful to provide the TL trapping and recombination centers for these materials.

  1. A single-crystal neutron and X-ray diffraction study of pezzottaite, Cs(Be2Li)Al2Si6O18

    NASA Astrophysics Data System (ADS)

    Gatta, G. Diego; Adamo, Ilaria; Meven, Martin; Lambruschi, Erica

    2012-11-01

    The chemical composition and the crystal structure of pezzottaite [ideal composition Cs(Be2Li)Al2Si6O18; space group: {{R}} overline{{3}} c, a = 15.9615(6) Å, c = 27.8568(9) Å] from the type locality in Ambatovita (central Madagascar) were investigated by electron microprobe analysis in wavelength dispersive mode, thermo-gravimetric analysis, Fourier-transform infrared spectroscopy, single-crystal X-ray (at 298 K) and neutron (at 2.3 K) diffraction. The average chemical formula of the sample of pezzottaite resulted Cs1,Cs2(Cs0.565Rb0.027K0.017)Σ0.600 Na1,Na2(Na0.101Ca0.024)Σ0.125Be2.078Li0.922 Al1,Al2(Mg0.002Mn0.002Fe0.003Al1.978)Σ1.985 Si1,Si2,Si3(Al0.056Si5.944)Σ6O18·0.27H2O. The (unpolarized) IR spectrum over the region 3,800-600 cm-1 was collected and a comparison with the absorption bands found in beryl carried out. In particular, two-weak absorption bands ascribable to the fundamental H2O stretching vibrations (i.e. 3,591 and 3,545 cm-1) were observed, despite the mineral being nominally anhydrous. The X-ray and neutron structure refinements showed: ( a) a non-significant presence of aluminium, beryllium or lithium at the Si1, Si2 and Si3 sites, ( b) the absence (at a significant level) of lithium at the octahedral Al1, Al2 and Al3 sites and ( c) a partial lithium/beryllium disordering between tetrahedral Be and Li sites.

  2. Crystal structures of Zn2SiO4 III and IV synthesized at 6.5-8 GPa and 1,273 K

    NASA Astrophysics Data System (ADS)

    Liu, Xianyu; Kanzaki, Masami; Xue, Xianyu

    2013-06-01

    We report the crystal structures determined under ambient condition for two Zn2SiO4 polymorphs synthesized at 6.5 GPa and 1,273 K (phase III) and 8 GPa and 1,273 K (phase IV) and also compare their 29Si MAS NMR spectroscopic characteristics with those of other Zn2SiO4 polymorphs (phases I, II and V). Electron microprobe analysis revealed that both of phases III and IV are stoichiometric like the lower-pressure polymorphs (phases I and II), contrary to previous report. The crystal structures were solved using an ab initio structure determination technique from synchrotron powder X-ray diffraction data utilizing local structural information from 29Si MAS NMR as constraints and were further refined with the Rietveld technique. Phase III is orthorhombic ( Pnma) with a = 10.2897(5), b = 6.6711(3), c = 5.0691(2) Å. It is isostructural with the high-temperature (Zn1.1Li0.6Si0.3)SiO4 phase and may be regarded as a `tetrahedral olivine' type that resembles the `octahedral olivine' structure in the (approximately hexagonally close packed) oxygen arrangement and tetrahedral Si positions, but has Zn in tetrahedral, rather than octahedral coordination. Phase IV is orthorhombic ( Pbca) with a = 10.9179(4), b = 9.6728(4), c = 6.1184(2) Å. It also consists of tetrahedrally coordinated Zn and Si and features unique edge-shared Zn2O6 dimers. The volumes per formula under ambient condition for phases III and IV are both somewhat larger than that of the lower-pressure polymorph, phase II, suggesting that the two phases may have undergone structural changes during temperature quench and/or pressure release.

  3. Crystal chemistry of the G-phases in the {l_brace}Ti, Zr, Hf{r_brace}-Ni-Si systems

    SciTech Connect

    Grytsiv, A.; Chen Xingqiu; Rogl, P. Podloucky, R.; Schmidt, H.; Giester, G.; Pomjakushin, V.

    2007-02-15

    Ternary compounds M{sub 6}Ni{sub 16}Si{sub 7} (M=Ti, Zr, Hf) have been investigated by X-ray powder/single crystal and neutron powder diffraction. Compounds with Zr and Hf crystallize in the ordered Th{sub 6}Mn{sub 23} type (Mg{sub 6}Cu{sub 16}Si{sub 7}-type, space group Fm3-bar m), whereas Ti{sub 6}Ni{sub 16.7}Si{sub 7} contains an additional Ni atom partially occupying the 24e site (M2 site, x=0.4637,0,0; occ.=0.119) inside a Ti octahedron; Ti atoms occupy a split position. Ti{sub 6}Ni{sub 16.7}Si{sub 7} represents a new variant of the filled Th{sub 6}Mn{sub 23} type structure. Ab initio calculations confirm the structural difference: additional Ni atoms favour the 24e site for Ti{sub 6}Ni{sub 16.7}Si{sub 7}, however, for the Zr and Hf-based compounds the unoccupied site renders an energetically lower ground state. Enthalpies of formation of Ti{sub 6}Ni{sub 17}Si{sub 7}, Zr{sub 6}Ni{sub 16}Si{sub 7}, and Hf{sub 6}Ni{sub 16}Si{sub 7} were calculated to be -68.65, -74.78, and -78.59kJ/(mol of atoms), respectively.

  4. Film-Cooling Heat-Transfer Measurements Using Liquid Crystals

    NASA Technical Reports Server (NTRS)

    Hippensteele, Steven A.

    1997-01-01

    The following topics are discussed: (1) The Transient Liquid-Crystal Heat-Transfer Technique; (2) 2-D Film-Cooling Heat-Transfer on an AlliedSignal Vane; and (3) Effects of Tab Vortex Generators on Surface Heat Transfer. Downstream of a Jet in Crossflow.

  5. The co-crystallization of beryl-structure compounds in the Al 2Be 3Si 6O 18—Mg,Ca/F,Cl system

    NASA Astrophysics Data System (ADS)

    Mikhailov, M. A.

    2005-02-01

    An Al 2Be 3Si 6O 18 — Mg, Ca/F, Cl flux system unused earlier has been chosen for the synthesis of beryl (Al 2Be 3Si 6O 18) and its varieties. In such a case of disregarding the well-known rules of the choice of a solvent, the following crystallization features of beryl have been revealed: (1) the beryl co-crystallizes successively and/or simultaneously with isostructural beryllian indialite (Mg 2BeAl 2Si 6O 18); (2) the bulk of beryl crystals is formed only in regions with high concentration of a flux; (3) the solution-melt liquates; (4) the solvent evaporates intensively. The advantages of the flux proposed are both the possibility of using inexpensive steel crucibles and good chromophoric properties of Cr, V, and Ti. Ratios of constitutient elements and some additive those between beryl and beryllian indialite, both grown simultaneously, and between pinacoid and prism in crystals of these compounds are reported.

  6. Crystal structure of apatite type Ca2.49Nd7.51(SiO4)6O1.75

    PubMed Central

    Le, Thu Hoai; Brooks, Neil R.; Binnemans, Koen; Blanpain, Bart; Guo, Muxing; Van Meervelt, Luc

    2016-01-01

    The title compound, Ca2+xNd8–x(SiO4)6O2–0.5x (x = 0.49), was synthesized at 1873 K and rapidly quenched to room temperature. Its structure has been determined using single-crystal X-ray diffraction and compared with results reported using neutron and X-ray powder diffraction from samples prepared by slow cooling. The single-crystal structure from room temperature data was found to belong to the space group P63/m and has the composition Ca2.49Nd7.51(SiO4)6O1.75 [dicalcium octa­neodymium hexa­kis­(ortho­silicate) dioxide], being isotypic with natural apatite and the previously reported Ca2Nd8(SiO4)6O2 and Ca2.2Nd7.8(SiO4)6O1.9. The solubility limit of calcium in the equilibrium state at 1873 K was found to occur at a composition of Ca2+xNd8–x(SiO4)6O2–0.5x, where x = 0.49. PMID:26958389

  7. Measurement and models of bent KAP(001) crystal integrated reflectivity and resolution (invited)

    NASA Astrophysics Data System (ADS)

    Loisel, G. P.; Wu, M.; Stolte, W.; Kruschwitz, C.; Lake, P.; Dunham, G. S.; Bailey, J. E.; Rochau, G. A.

    2016-11-01

    The Advanced Light Source beamline-9.3.1 x-rays are used to calibrate the rocking curve of bent potassium acid phthalate (KAP) crystals in the 2.3-4.5 keV photon-energy range. Crystals are bent on a cylindrically convex substrate with a radius of curvature ranging from 2 to 9 in. and also including the flat case to observe the effect of bending on the KAP spectrometric properties. As the bending radius increases, the crystal reflectivity converges to the mosaic crystal response. The X-ray Oriented Programs (xop) multi-lamellar model of bent crystals is used to model the rocking curve of these crystals and the calibration data confirm that a single model is adequate to reproduce simultaneously all measured integrated reflectivities and rocking-curve FWHM for multiple radii of curvature in both 1st and 2nd order of diffraction.

  8. Synthesis and Characterization of Sterically Hindered Alkylaluminum-Phosphorus and -Arsenic Compounds. X-Ray Crystal Structures of (Me3ECH2)3Al E’(SiMe3)3 (E = Si, E’ = As; E = C, E’ = P, As), (Me3SiCH2)2(Br)Al P(SiMe3)3, and (Me3SiCH2)(X)AlE(SiMe3)22 (X = Br, E = P, As; X = Me3SiCH2, E =As)

    DTIC Science & Technology

    2007-11-02

    Various physical and spectroscopic data, including a variable temperature NMR study of the dimeric compounds 6 through 9, are presented for the above...CHARACTERIZATION OF STERICALLY HINDERED ALKYLALUMINUM-PHOSPHORUS AND -ARSENIC COMPOUNDS . X-RAY CRYSTAL STRUCTURES OF (Me3ECH2)3Al«E’(SiMe3)3 (E = Si, E...Accepted for publication in the Organometallics 12a. DISTRIBUTION /AVAILABILITY STATEMENT Approved for Public Release Distribution Unlimited 12b

  9. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  10. The isotopic composition of enriched Si: a data analysis

    NASA Astrophysics Data System (ADS)

    Bulska, E.; Drozdov, M. N.; Mana, G.; Pramann, A.; Rienitz, O.; Sennikov, P.; Valkiers, S.

    2011-04-01

    To determine the Avogadro constant by counting the atoms in quasi-perfect spheres made of a silicon crystal highly enriched with 28Si, the isotopic composition of the crystal was measured in different laboratories by different measurement methods. This paper examines the consistency of the measurement results.

  11. Real-time measurements of crystallization processes in viscoelastic polymeric photonic crystals

    NASA Astrophysics Data System (ADS)

    Snoswell, David R. E.; Finlayson, Chris E.; Zhao, Qibin; Baumberg, Jeremy J.

    2015-11-01

    We present a study of the dynamic shear ordering of viscoelastic photonic crystals, based on core-shell polymeric composite particles. Using an adapted shear-cell arrangement, the crystalline ordering of the material under conditions of oscillatory shear is interrogated in real time, through both video imaging and from the optical transmission spectra of the cell. In order to gain a deeper understanding of the macroscopic influences of shear on the crystallization process in this solvent-free system, the development of bulk ordering is studied as a function of the key parameters including duty cycle and shear-strain magnitude. In particular, optimal ordering is observed from a prerandomized sample at shear strains of around 160%, for 1-Hz oscillations. This ordering reaches completion over time scales of order 10 s. These observations suggest significant local strains are needed to drive nanoparticles through energy barriers, and that local creep is needed to break temporal symmetry in such high-viscosity nanoassemblies. Crystal shear-melting effects are also characterized under conditions of constant shear rate. These quantitative experiments aim to stimulate the development of theoretical models which can deal with the strong local particle interactions in this system.

  12. Crystal structure of the pressure-induced metallic phase of SiH4 from ab initio theory.

    PubMed

    Kim, D Y; Scheicher, R H; Lebègue, S; Prasongkit, J; Arnaud, B; Alouani, M; Ahuja, R

    2008-10-28

    Metallization of pure solid hydrogen is of great interest, not least because it could lead to high-temperature superconductivity, but it continues to be an elusive goal because of great experimental challenges. Hydrogen-rich materials, in particular, CH(4), SiH(4), and GeH(4), provide an opportunity to study related phenomena at experimentally achievable pressures, and they too are expected to be high-temperature superconductors. Recently, the emergence of a metallic phase has been observed in silane for pressures just above 60 GPa. However, some uncertainty exists about the crystal structure of the discovered metallic phase. Here, we show by way of elimination, that a single structure that possesses all of the required characteristics of the experimentally observed metallic phase of silane from a pool of plausible candidates can be identified. Our density functional theory and GW calculations show that a structure with space group P4/nbm is metallic at pressures >60 GPa. Based on phonon calculations, we furthermore demonstrate that the P4/nbm structure is dynamically stable at >43 GPa and becomes the ground state at 97 GPa when zero-point energy contributions are considered. These findings could lead the way for further theoretical analysis of metallic phases of hydrogen-rich materials and stimulate experimental studies.

  13. Ti-Sn alloy nanodot composites embedded in single-crystal SiO2 by low energy dynamic coimplantation

    NASA Astrophysics Data System (ADS)

    Zhao, J. P.; Meng, Y.; Huang, D. X.; Rayabarapu, R. K.; Rabalais, J. W.

    2006-10-01

    Organized extremely small Ti-Sn alloy nanodots have been formed in the subsurface of SiO2 by dynamic coimplantation of isotopic Ti+48 and Sn+120 at a low kinetic energy of 9keV into (0001) Z-cut quartz at different substrate temperatures. Transmission electron microscopy images show that the Ti-Sn alloy nanodots are single crystal and have been formed uniformly at room temperature. They are distributed in a two-dimensional array with similar size of ˜4nm and constant interdot spacing between each dot. The regions beyond and below the two-dimensional array are depleted of detectable nanodots. At high temperature, the distribution and crystallinity were destroyed with much smaller amorphous nanodots in a slightly deeper region. The implantation was carried out by dynamic coimplantation, rather than the commonly used sequential implantation. These results indicate that dynamic low energy coimplantation is capable of forming well-ordered two-dimensional array of alloy nanodots.

  14. Disorder in the composite crystal structure of the manganese `disilicide' MnSi1.73 from powder X-ray diffraction data.

    PubMed

    Akselrud, L; Cardoso Gil, R; Wagner-Reetz, M; Grin, Yu

    2015-12-01

    The crystal structure of the higher manganese silicide MnSi1.7 (known in the literature as HMS) is investigated in samples with different compositions obtained by different techniques at temperatures not higher than 1273 K. Powder X-ray diffraction was applied. The crystal structure is described as incommensurate composite. In addition to the ordered model already known in the literature, the partial disorder in the silicon substructure was detected and described introducing an additional atomic site with a different modulation function.

  15. A study on dual readout crystal calorimeter for hadron and jet energy measurement at a future lepton collider

    SciTech Connect

    Yeh, G.P.; /Fermilab

    2010-01-01

    Studies of requirements and specifications of crystals are necessary to develop a new generation of crystals for dual readout crystal hadron or total absorption calorimeter. This is a short and basic study of the characteristics and hadron energy measurement of PbWO4 and BGO crystals for scintillation and Cerenkov Dual Readout hadron calorimeter.

  16. Raman study of TiO2 role in SiO2-Al2O3-MgO-TiO2-ZnO glass crystallization.

    PubMed

    Furić, Kresimir; Stoch, Leszek; Dutkiewicz, Jan

    2005-05-01

    Tough glass-ceramic material of special mechanical properties with nanosize crystal phases formed by appropriately controlled crystallization was studied by Raman spectroscopy. It was obtained by TiO2 activated crystallization of Mg-aluminosilicate glass of SiO2-Al2O3-MgO-TiO2-ZnO composition. Crystallization was preceded by a change in the TiO2 structural position and state, which is manifested by a changed color of glass from yellow into blue shortly before the glass transformation (Tg) temperature. Raman spectroscopy was applied to explain the mechanism of this process and to establish the role of TiO2 in the early stage of glass crystallization that precedes a complete crystal phase formation. The starting glasses were found in almost complete disorder, since all bands were weak, broad and dominated by a Bose band at about 90 cm-1. After the sample annealing all bands turned out better resolved and the Bose band practically disappeared, both confirming the amorphous structure reorganization process. A multiplet observed in the vicinity of 150 cm-1 we assigned to the anatase and other titania structures that can be considered prime centers of crystallization. Finally, in the closest neighborhood of the Rayleigh line the low frequency mode characterizing nanoparticles was observed. According to this band theory, the mean size of initial titania crystallites is about 10nm for all samples, but the size distribution varies within factor two among them.

  17. Measurement of the decay rate of the SiH feature as a function of temperature

    NASA Technical Reports Server (NTRS)

    Nuth, Joseph A., III; Kraus, George F.

    1994-01-01

    We have previously suggested that the SiH fundamental stretch could serve as a diagnostic indicator of the oxidation state of silicate surfaces exposed to the solar wind for prolonged periods. We have now measured the primary decay rate of SiH in vacuo as a function of temperature and find that the primary rate constant for the decay can be characterized by the following equation: k(min(exp -1)) approximately equals 0.186 exp(-9/RT) min(exp -1), where R = 2 x 10(exp -3) kcal deg(exp -1) mole(exp -1). This means that the half-life for the decay of the SiH feature at room temperature is approximately 20 yrs, whereas the half-life at a peak lunar regolith temperature of approximately 500K would be only approximately 20 days. At the somewhat lower temperature of approximately 400K the half-life for the decay is on the order of 200 days. The rate of loss of SiH as a function of temperature provides an upper limit to the quantity of H implanted by the solar wind which can be retained by a silicate grain in a planetary regolith. This will be discussed in more detail here.

  18. Calculation of Mass Transfer Coefficients in a Crystal Growth Chamber through Heat Transfer Measurements

    SciTech Connect

    Bell, J H; Hand, L A

    2005-04-21

    The growth rate of a crystal in a supersaturated solution is limited by both reaction kinetics and the local concentration of solute. If the local mass transfer coefficient is too low, concentration of solute at the crystal-solution interface will drop below saturation, leading to a defect in the growing crystal. Here, mass transfer coefficients are calculated for a rotating crystal growing in a supersaturated solution of potassium diphosphate (KDP) in water. Since mass transfer is difficult to measure directly, the heat transfer coefficient of a scale model crystal in water is measured using temperature-sensitive paint (TSP). To the authors' knowledge this is the first use of TSP to measure temperatures in water. The corresponding mass transfer coefficient is then calculated using the Chilton- Colburn analogy. Measurements were made for three crystal sizes at two running conditions each. Running conditions include periodic reversals of rotation direction. Heat transfer coefficients were found to vary significantly both across the crystal faces and over the course of a rotation cycle, but not from one face to another. Mean heat transfer coefficients increased with both crystal size and rotation rate. Computed mass transfer coefficients were broadly in line with expectations from the full-scale crystal growth experiments. Additional experiments show that continuous rotation of the crystal results in about a 30% lower heat transfer compared to rotation with periodic reversals. The continuous rotation case also shows a periodic variation in heat transfer coefficient of about 15%, with a period about 1/20th of the rotation rate.

  19. Cascade phonon-assisted trapping of positrons by divacancies in n-FZ-Si(P) single crystals irradiated with 15 MeV protons

    NASA Astrophysics Data System (ADS)

    Arutyunov, N. Yu.; Emtsev, V. V.; Krause-Rehberg, R.; Kessler, C.; Elsayed, M.; Oganesyan, G. A.; Kozlovski, V. V.

    2014-02-01

    The trapping of positrons by the radiation defects in moderately doped oxygen-lean n-FZ-Si(P) single crystal irradiated with 15 MeV protons has been investigated in a comparative way using the positron lifetime spectroscopy and Hall effect measurements. The experiments were carried out within a wide temperature interval ranging from 25 K - 29 K to 300 K. The positron trapping rate for divacancies was reconstructed in the course of many-stage isochronal annealing. The concentration and the charged states of divacancies (V2- and V2--) were estimated. The temperature dependency of the trapping cross section of positrons by the negatively charged divacancies is in a good agreement with the data of calculations based on the assumptions of the cascade phonon-assisted mechanism of exchange of the energy between the positron and acoustic long-wave phonons. Obeying ˜ T-3 law, the cross-section of the trapping of positrons by divacancies changes considerably ranging from ˜1.7×10-12 cm2 (66 - 100 K) to ˜2×10-14 cm2 (≈ 250 K). The characteristic length of trapping of the positron by V2-- divacancy was estimated to be l0(V2--)≈(3.4±0.2)×10-8 cm.

  20. Pumping-power-dependent photoluminescence angular distribution from an opal photonic crystal composed of monodisperse Eu3+/SiO2 core/shell nanospheres.

    PubMed

    Tuyen, Le Dac; Lin, Jian Hung; Wu, Cheng Yi; Tai, Po-Tse; Tang, Jau; Minh, Le Quoc; Kan, Hung-Chih; Hsu, Chia Chen

    2012-07-02

    High quality opal photonic crystals (PhCs) were successfully fabricated by self-assembling of monodisperse Eu(3+)/SiO(2) core/shell nanospheres. Angular resolved photoluminescence (PL) spectra of a PhC sample were measured with different pumping powers, and its PL emission strongly depended on spectroscopic position of the photonic stop band and the optical pumping power. Suppression of the PL occurred in the directions where the emission lines aligned with the center of the photonic stop band. Suppression and enhancement of the PL were observed at low- and high-pumping powers, respectively, in the directions where the emission lines were located at the edges of the photonic stop band. When pumping power exceeded 6 µJ/pulse, a super-linear dependence was found between the pumping power and PL intensity. The dramatic enhancement of PL was attributed to the amplification of spontaneous emission resulted from the creation of large population inversion and the slow group velocity of the emitted light inside the PhC. The opal PhC provided highly angular-selective quasi-monochromatic PL output, which can be useful for a variety of optical applications.

  1. Detailed optical spectroscopy of hybridization gap and hidden-order transition in high-quality URu2Si2 single crystals

    NASA Astrophysics Data System (ADS)

    Bachar, N.; Stricker, D.; Muleady, S.; Wang, K.; Mydosh, J. A.; Huang, Y. K.; van der Marel, D.

    2016-12-01

    We present a detailed temperature and frequency dependence of the optical conductivity measured on clean high-quality single crystals of URu2Si2 of a c - and a b -plane surfaces. Our data demonstrate the itinerant character of the narrow 5 f bands, becoming progressively coherent as the temperature is lowered below a crossover temperature T*˜75 K. T* is higher than in previous reports as a result of a different sample preparation, which minimizes residual strain. We furthermore present the density-response (energy-loss) function of this compound, and determine the energies of the heavy-fermion plasmons with a - and c -axis polarization. Our observation of a suppression of optical conductivity below 50 meV along both the a and c axes, along with a heavy-fermion plasmon at 18 meV, points toward the emergence of a band of coherent charge carriers crossing the Fermi energy and the emergence of a hybridization gap on part of the Fermi surface. The evolution towards coherent itinerant states is accelerated below the hidden order temperature THO=17.5 K. In the hidden order phase the low-frequency optical conductivity shows a single gap at ˜6.5 meV, which closes at THO.

  2. Comparative study of the absorption spectrum of Li 2CaSiO 4:Cr 4+: First-principles fully relativistic and crystal field calculations

    NASA Astrophysics Data System (ADS)

    Brik, M. G.; Ogasawara, K.

    2007-11-01

    Systematic analysis of the energy level scheme and ground state absorption of the Cr4+ ion in Li2CaSiO4 crystal was performed using the exchange charge model of the crystal field [B.Z. Malkin, in: A.A. Kaplyanskii, B.M. Macfarlane (Eds.), Spectroscopy of Solids Containing Rare-earth Ions, North-Holland, Amsterdam, 1987, pp. 33-50] and recently developed first-principles approach to the analysis of the absorption spectra of impurity ions in crystals based on the discrete variational multielectron (DVME) method [K. Ogasawara, T. Iwata, Y. Koyama, T. Ishii, I. Tanaka, H. Adachi, Phys. Rev. B 64 (2001) 115413]. Using the former method, the values of parameters of crystal field acting on the Cr4+ ion valence electrons were calculated using the Li2CaSiO4 crystal structure data. Energy levels of the Cr4+ ion obtained after diagonalizing the crystal field Hamiltonian are in good agreement with those obtained from the experimental spectra. The latter method is based on the numerical solution of the Dirac equation; therefore, all relativistic effects are automatically considered. As a result, energy level scheme of Cr4+ and its absorption spectra in both polarizations were calculated, assigned and compared with experimental data; energy of the lowest charge transfer transition was evaluated and compared with theoretical predictions for the CrO44- complex available in the literature. The main features of the experimental spectra shape are reproduced well by the calculations. By performing analysis of the molecular orbitals (MO) population, it was shown that the covalent effects play an important role in formation of the spectral properties of Cr4+ ion in the considered crystal.

  3. DC electrical conductivity measurements for pure and titanium oxide doped KDP Crystals grown by gel medium

    NASA Astrophysics Data System (ADS)

    Mareeswaran, S.; Asaithambi, T.

    2016-10-01

    Now a day's crystals are the pillars of current technology. Crystals are applied in various fields like fiber optic communications, electronic industry, photonic industry, etc. Crystal growth is an interesting and innovative field in the subject of physics, chemistry, material science, metallurgy, chemical engineering, mineralogy and crystallography. In recent decades optically good quality of pure and metal doped KDP crystals have been grown by gel growth method in room temperature and its characterizations were studied. Gel method is a very simple and one of the easiest methods among the various crystal growth methods. Potassium dihydrogen phosphate KH2PO4 (KDP) continues to be an interesting material both academically and technologically. KDP is a delegate of hydrogen bonded materials which possess very good electrical and nonlinear optical properties in addition to interesting electro-optic properties. We made an attempt to grow pure and titanium oxide doped KDP crystals with various doping concentrations (0.002, 0.004, 0.006, 0.008 and 0.010) using gel method. The grown crystals were collected after 20 days. We get crystals with good quality and shaped crystals. The dc electrical conductivity (resistance, capacitance and dielectric constant) values of the above grown crystals were measured at two different frequencies (1KHz and 100 Hz) with a temperature range of 500C to 1200C using simple two probe setup with Q band digital LCR meter present in our lab. The electrical conductivity increases with the increase of temperature. Dielectric constants value of titanium oxide doped KDP crystal was slightly decreased compared with pure KDP crystals. Results were discussed in details.

  4. TEM investigation of the surface layer structure [111]{sub B2} of the single NiTi crystal modified by the Si-ion beam implantation

    SciTech Connect

    Girsova, S. L. Poletika, T. M.; Meisner, S. N. Meisner, L. L.

    2015-10-27

    The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]{sub B2} was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.

  5. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    DOE PAGES

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; ...

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match themore » polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.« less

  6. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    SciTech Connect

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

  7. Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

    SciTech Connect

    Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

    2010-04-30

    The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

  8. Correlation measurements of light transmittance in polymer dispersed liquid crystals

    NASA Astrophysics Data System (ADS)

    Maksimyak, P. P.; Nehrych, A. L.

    2015-11-01

    The methods of correlation optics are for the first time applied to study structure of liquid crystal (LC) - polymer (P) composites at various concentrations of LC and P. Their phase correlation function (PCF) was obtained considering LC-P composite as a random phase screen. The amplitude of PCF contains information about number of LC domains and structure of LC director inside of them, while a half-width of this function is connected with a size of these domains. We studied unpowered and powered composite layers with a thickness of 5 μm. As liquid crystal and polymer were used nematic LC E7 from Merck and photopolymer composition NOA65 from Norland. Concentration of polymer φP was varied in a range 10-55 vol. %. In good agreement with previous studies by SEM technique we detected monotone decrease of LC domains with concentration of polymer. With application of electric field, amplitude of PCF behaves differently for the samples with different polymer content. For the samples with φP>35 vol. % (samples having morphology of polymer dispersed LC), this dependence is monotonic. In turn, if φP<35 vol. % (samples with polymer network LC morphology), the amplitude of PCF non-monotonically depends on the applied voltage going through a maximum. The latter fact is explained by transformation of orientational defects of LC phase with the applied voltage.

  9. Zygo interferometer for the precious measurement of tiny refractive index change of two laser crystals

    NASA Astrophysics Data System (ADS)

    Wu, Ting; Hui, Yongling; Yan, Zou; Li, Zhitong; Li, Qiang

    2017-03-01

    An application of the Zygo system for measuring the refractive index change between two crystals such as 1at%Yb3+: YAG and YAG, was introduced in this paper, having a high accuracy at an order of 10-7. In this method, the tiny refractive index change of two crystals was obtained by measuring the difference in optical path distance of equal thickness interference between two crystals. The mean value of refractive index change of the crystals measured by the Zygo interferometer is 1.10×10-4 for a wavelength of 632.8 nm. And a high accuracy of 3.2×10-6 was achieved.

  10. Structural studies on Si:H network before and after solid phase crystallization using spectroscopic ellipsometry: Correlation with Raman spectroscopy and transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Goswami, Romyani; Ray, Swati

    2013-10-01

    The structure of hydrogenated silicon films (Si:H) before and after solid phase crystallization (SPC) has been investigated by detailed study of spectroscopic ellipsometry (SE). The Si:H films have been deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) system varying deposition power density from 0.03 W/cm2 to 0.46 W/cm2, just below the onset of amorphous to nano-crystalline transition region. Solid phase crystallization of the Si:H network has been done by thermal annealing of the films in a vacuum furnace. Different bulk compositions of the as deposited Si:H network and annealed (polycrystalline) films have been calculated from the fitted parameters obtained from the simulation of the ellipsometry data by Bruggeman effective medium approximation (BEMA) method. More compact and void free structure in the bulk layer of the as deposited films has been observed at low power deposition region. Whereas void fraction in the bulk and surface roughness layer has increased with increase of deposition power density. For the annealed films higher crystallinity at the bulk layer with fewer voids has been observed at the low power region but in the surface roughness layer void fraction dominates in all the low and high power deposited films. The results obtained from the spectroscopic ellipsometry study have been correlated with Raman spectroscopy and transmission electron microscopy for both the as deposited and annealed films.

  11. Effects of contact resistance on electrical conductivity measurements of SiC-based materials

    SciTech Connect

    Youngblood, G. E.; Thomsen, E. C.; Henager, C. H.

    2013-11-01

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (Rc) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ~973 K. The Rc-values behaved similarly for each type of metallic electrode: Rc > ~1000 Ω cm2 at RT, decreasing continuously to ~1–10 Ω cm2 at 973 K. The temperature dependence of the inverse Rc indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. Finally, for the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

  12. A transient liquid crystal thermography technique for gas turbine heat transfer measurements

    NASA Astrophysics Data System (ADS)

    Ekkad, Srinath V.; Han, Je-Chin

    2000-07-01

    This paper presents in detail the transient liquid crystal technique for convective heat transfer measurements. A historical perspective on the active development of liquid crystal techniques for convective heat transfer measurement is also presented. The experimental technique involves using a thermochromic liquid crystal coating on the test surface. The colour change time of the coating at every pixel location on the heat transfer surface during a transient test is measured using an image processing system. The heat transfer coefficients are calculated from the measured time responses of these thermochromic coatings. This technique has been used for turbine blade internal coolant passage heat transfer measurements as well as turbine blade film cooling heat transfer measurements. Results can be obtained on complex geometry surfaces if visually accessible. Some heat transfer results for experiments with jet impingement, internal cooling channels with ribs, flow over simulated TBC spallation, flat plate film cooling, cylindrical leading edge and turbine blade film cooling are presented for demonstration.

  13. In-situ measurement of bound states in the continuum in photonic crystal slabs (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kalchmair, Stefan; Gansch, Roman; Genevet, Patrice; Zederbauer, Tobias; MacFarland, Donald; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried; Capasso, Federico; Loncar, Marko

    2016-04-01

    Photonic crystal slabs have been subject to research for more than a decade, yet the existence of bound states in the radiation continuum (BICs) in photonic crystals has been reported only recently [1]. A BIC is formed when the radiation from all possible channels interferes destructively, causing the overall radiation to vanish. In photonic crystals, BICs are the result of accidental phase matching between incident, reflected and in-plane waves at seemingly random wave vectors [2]. While BICs in photonic crystals have been discussed previously using reflection measurements, we reports for the first time in-situ measurements of the bound states in the continuum in photonic crystal slabs. By embedding a photodetector into a photonic crystal slab we were able to directly observe optical BICs. The photonic crystal slabs are processed from a GaAs/AlGaAs quantum wells heterostructure, providing intersubband absorption in the mid-infrared wavelength range. The generated photocurrent is collected via doped contact layers on top and bottom of the suspended photonic crystal slab. We were mapping out the photonic band structure by rotating the device and by acquiring photocurrent spectra every 5°. Our measured photonic bandstructure revealed several BICs, which was confirmed with a rigorously coupled-wave analysis simulation. Since coupling to external fields is suppressed, the photocurrent measured by the photodetector vanishes at the BIC wave vector. To confirm the relation between the measured photocurrent and the Q-factor we used temporal coupled mode theory, which yielded an inverse proportional relation between the photocurrent and the out-coupling loss from the photonic crystal. Implementing a plane wave expansion simulation allowed us to identify the corresponding photonic crystal modes. The ability to directly measure the field intensity inside the photonic crystal presents an important milestone towards integrated opto-electronic BIC devices. Potential

  14. Surfactant-assisted hydrothermal crystallization of nanostructured lithium metasilicate (Li{sub 2}SiO{sub 3}) hollow spheres: (I) Synthesis, structural and microstructural characterization

    SciTech Connect

    Ortiz-Landeros, J.

    2011-05-15

    Lithium metasilicate (Li{sub 2}SiO{sub 3}) was successfully synthesized using a hydrothermal process in the presence of different surfactants with cationic, non-ionic and anionic characters. The samples obtained were compared to a sample prepared by the conventional solid-state reaction method. The structural and microstructural characterizations of different Li{sub 2}SiO{sub 3} powders were performed using various techniques. Diffraction analyses revealed the successful crystallization of pure Li{sub 2}SiO{sub 3} single phase by hydrothermal technique, even without further heat-treatments and independent of the surfactant used. Electron microscopy analyses revealed that Li{sub 2}SiO{sub 3} powders were composed of uniform micrometric particles with a hollow sphere morphology and nanostructured walls. Finally, different thermal analyses showed that Li{sub 2}SiO{sub 3} samples preserved their structure and microstructure after further thermal treatments. Specific aspects regarding the formation mechanism of the spherical aggregates under hydrothermal conditions are discussed, and there is a special emphasis on the effect of the synthesis pathway on the morphological characteristics. -- Graphical abstract: Li{sub 2}SiO{sub 3} was synthesized using a hydrothermal process in the presence of different surfactants. Li{sub 2}SiO{sub 3} powders were composed of uniform micrometric particles with a hollow sphere morphology and nanostructured walls. Display Omitted Highlights: {yields} Pure Li{sub 2}SiO{sub 3} was synthesized by the hydrothermal method. {yields} Surfactant addition produced microstructural and morphological variations. {yields} TEM reveled the generation of nanostructured hollow spheres.

  15. Plasma crystal dynamics measured with a three-dimensional plenoptic camera.

    PubMed

    Jambor, M; Nosenko, V; Zhdanov, S K; Thomas, H M

    2016-03-01

    Three-dimensional (3D) imaging of a single-layer plasma crystal was performed using a commercial plenoptic camera. To enhance the out-of-plane oscillations of particles in the crystal, the mode-coupling instability (MCI) was triggered in it by lowering the discharge power below a threshold. 3D coordinates of all particles in the crystal were extracted from the recorded videos. All three fundamental wave modes of the plasma crystal were calculated from these data. In the out-of-plane spectrum, only the MCI-induced hot spots (corresponding to the unstable hybrid mode) were resolved. The results are in agreement with theory and show that plenoptic cameras can be used to measure the 3D dynamics of plasma crystals.

  16. Effect of partial crystallization on the mechanical properties and cytotoxicity of bioactive glass from the 3CaO.P(2)O(5)-SiO(2)-MgO system.

    PubMed

    Daguano, J K M F; Strecker, K; Ziemath, E C; Rogero, S O; Fernandes, M H V; Santos, C

    2012-10-01

    The aim of this study is to report on the development and characterization of bioactive glass and glass-ceramics from the 3CaO.P(2)O(5)-SiO(2)-MgO-system, using different degrees of cristallinity for applications as an implant material. A methodology was proposed to induce crystallization of phases. Bioglass samples of the nominal composition (wt %) 57.75 CaO.P(2)O(5)-30 SiO(2)-17.25MgO were heat treated at temperatures ranging from 700 to 1100°C for 4h. The findings from the research illustrate how partial crystallization and phase transformations modified the microstructure of the based glassy material, resulting in improved mechanical properties. The maximum gain was measured for samples treated at 975°C, having a hardness of 6.2GPa, an indentation fracture toughness of 1.7MPam(1/2) and a bending strength of 120MPa, representing an increase of 30, 55 and 70%, respectively, when compared to the nucleated glass. The highest elastic modulus of about 130GPa was determined for samples treated at 1100°C. As a preliminary biological evaluation, "in vitro" cytotoxicity tests were realized to determine the cytotoxic level of the materials, using the neutral red uptake method with NCTC clones L929 from the American Type Culture Collection (ATCC) bank. On the other hand, no significant influence of the partial crystallization on cytotoxicity was observed. The results provide support for implant materials based on the 3CaO.P(2)O(5)-SiO(2)-MgO-system.

  17. Nanosecond pulsed laser damage characteristics of HfO2/SiO2 high reflection coatings irradiated from crystal-film interface.

    PubMed

    Cheng, Xinbin; Jiao, Hongfei; Lu, Jiangtao; Ma, Bin; Wang, Zhanshan

    2013-06-17

    The nano-precursors in the subsurface of Nd:YLF crystal were limiting factor that decreased the laser-induced damage threshold (LIDT) of HfO(2)/SiO(2) high reflection (HR) coatings irradiated from crystal-film interface. To investigate the contribution of electric-field (E-field) to laser damage originating from nano-precursors and then to probe the distribution of vulnerable nano-precursors in the direction of subsurface depth, two 1064 nm HfO(2)/SiO(2) HR coatings having different standing-wave (SW) E-field distributions in subsurface of Nd:YLF c5424181043036123rystal were designed and prepared. Artificial gold nano-particles were implanted into the crystal-film interface prior to deposition of HR coatings to study the damage behaviors in a more reliable way. The damage test results revealed that the SW E-field rather than the travelling-wave (TW) E-field contributed to laser damage. By comparing the SW E-field distributions and LIDTs of two HR coating designs, the most vulnerable nano-precursors were determined to be concentrated in a thin redeposition layer that is within 100 nm from the crystal-film interface.

  18. In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction.

    PubMed

    Lu, Kuo-Chang; Wu, Wen-Wei; Wu, Han-Wei; Tanner, Carey M; Chang, Jane P; Chen, Lih J; Tu, K N

    2007-08-01

    Nanoheterostructures of NiSi/Si/NiSi in which the length of the Si region can be controlled down to 2 nm have been produced using in situ point contact reaction between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The Si region was found to be highly strained (more than 12%). The strain increases with the decreasing Si layer thickness and can be controlled by varying the heating temperature. It was observed that the Si nanowire is transformed into a bamboo-type grain of single-crystal NiSi from both ends following the path with low-activation energy. We propose the reaction is assisted by interstitial diffusion of Ni atoms within the Si nanowire and is limited by the rate of dissolution of Ni into Si at the point contact interface. The rate of incorporation of Ni atoms to support the growth of NiSi has been measured to be 7 x 10(-4) s per Ni atom. The nanoscale epitaxial growth rate of single-crystal NiSi has been measured using high-resolution lattice-imaging videos. On the basis of the rate, we can control the consumption of Si and, in turn, the dimensions of the nanoheterostructure down to less than 2 nm, thereby far exceeding the limit of conventional patterning process. The controlled huge strain in the controlled atomic scale Si region, potential gate of Si nanowire-based transistors, is expected to significantly impact the performance of electronic devices.

  19. ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

    NASA Astrophysics Data System (ADS)

    Shankar, S.; Tyryshkin, A. M.; Lyon, S. A.

    2015-06-01

    Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in 28Si and report two results. First, a fine structure is observed in the ESR spectrum arising from state mixing by the hyperfine coupling to the 31P nuclei, which is enhanced when the exchange energy is comparable to the Zeeman energy. This fine structure enables us to spectroscopically address two separate dimer subensembles, the first with exchange (J ) coupling ranging from 2 to 7 GHz and the second with J ranging from 6 to 60 GHz. Next, the average spin relaxation times T1 and T2 of both dimer subensembles were measured using pulsed ESR at 0.35 T. Both T1 and T2 for transitions between triplet states of the dimers were found to be identical to the relaxation times of isolated phosphorus donors in 28Si, with T2=4 ms at 1.7 K limited by spectral diffusion due to dipolar interactions with neighboring donor electron spins. This result, consistent with theoretical predictions, implies that an exchange coupling of 2-60 GHz does not limit the dimer T1 and T2 in bulk Si at the 10-ms time scale.

  20. Ultrafast visualization of crystallization and grain growth in shock-compressed SiO2

    DOE PAGES

    Gleason, A. E.; Bolme, C. A.; Lee, H. J.; ...

    2015-09-04

    Pressure- and temperature-induced phase transitions have been studied for more than a century but very little is known about the non-equilibrium processes by which the atoms rearrange. Shock compression generates a nearly instantaneous propagating high-pressure/temperature condition while in situ X-ray diffraction (XRD) probes the time-dependent atomic arrangement. Here we present in situ pump–probe XRD measurements on shock-compressed fused silica, revealing an amorphous to crystalline high-pressure stishovite phase transition. Using the size broadening of the diffraction peaks, the growth of nanocrystalline stishovite grains is resolved on the nanosecond timescale just after shock compression. At applied pressures above 18 GPa the nuclueationmore » of stishovite appears to be kinetically limited to 1.4±0.4 ns. The functional form of this grain growth suggests homogeneous nucleation and attachment as the growth mechanism. As a result, these are the first observations of crystalline grain growth in the shock front between low- and high-pressure states via XRD.« less

  1. Magnetic field measurements based on Terfenol coated photonic crystal fibers.

    PubMed

    Quintero, Sully M M; Martelli, Cicero; Braga, Arthur M B; Valente, Luiz C G; Kato, Carla C

    2011-01-01

    A magnetic field sensor based on the integration of a high birefringence photonic crystal fiber and a composite material made of Terfenol particles and an epoxy resin is proposed. An in-fiber modal interferometer is assembled by evenly exciting both eigenemodes of the HiBi fiber. Changes in the cavity length as well as the effective refractive index are induced by exposing the sensor head to magnetic fields. The magnetic field sensor has a sensitivity of 0.006 (nm/mT) over a range from 0 to 300 mT with a resolution about ±1 mT. A fiber Bragg grating magnetic field sensor is also fabricated and employed to characterize the response of Terfenol composite to the magnetic field.

  2. Measuring mechanical strain and twist using helical photonic crystal fiber.

    PubMed

    Xi, Xiaoming; Wong, Gordon K L; Weiss, Thomas; Russell, Philip St J

    2013-12-15

    Solid-core photonic crystal fiber (PCF) with a permanent helical twist exhibits dips in its transmission spectrum at certain wavelengths. These are associated with the formation of orbital angular momentum states in the cladding. Here we investigate the tuning of these states with mechanical torque and axial tension. The dip wavelengths are found to scale linearly with both axial strain and mechanical twist rate. Analysis shows that the tension-induced shift in resonance wavelength is determined both by the photoelastic effect and by the change in twist rate, while the torsion-induced wavelength shift depends only on the change in twist rate. Twisted PCF can act as an effective optically monitored torque-tension transducer, twist sensor, or strain gauge.

  3. Ring-core photonic crystal fiber interferometer for strain measurement

    NASA Astrophysics Data System (ADS)

    Chen, Weiguo; Lou, Shuqin; Wang, Liwen; Jian, Shuisheng

    2010-09-01

    A simple modal interferometer is proposed, to be produced by splicing a section of a novel ring-core photonic crystal fiber (RPCF) and two segments of single-mode fibers. Owing to the effects of the collapsed region, the ring modes in the RPCF can be effectively activated. This is the first demonstration of an interferometer based on the interference between ring modes, as opposed to previously reported interferometer based on the interference of core modes or cladding modes. The effects of the length of RPCF and the wavelength on the temperature and strain characteristics of the interferometer are investigated. The strain sensitivity increases with RPCF length and with wavelength. Based on the interferometer, a strain sensor with low temperature sensitivity is proposed, which has strain sensitivity of 1.777 pm/(μm/m).

  4. Physical property measurements of doped cesium iodide crystals

    NASA Technical Reports Server (NTRS)

    Synder, R. S.; Clotfelter, W. N.

    1974-01-01

    Mechanical and thermal property values are reported for crystalline cesium iodide doped with sodium and thallium. Young's modulus, bulk modulus, shear modulus, and Poisson's ratio were obtained from ultrasonic measurements. Young's modulus and the samples' elastic and plastic behavior were also measured under tension and compression. Thermal expansion and thermal conductivity were the temperature dependent measurements that were made.

  5. Measurements of the refractive indices and thermo-optic coefficients of Si3N4 and SiO(x) using microring resonances.

    PubMed

    Arbabi, Amir; Goddard, Lynford L

    2013-10-01

    We present a method for determining the core and cladding refractive indices of a microring resonator from its measured quasi-transverse electric and magnetic resonant modes. We use single wavelength reflective microrings to resolve the azimuthal order ambiguity of the measured resonances. We perform accurate electromagnetic simulations to model the dependence of the resonances on geometrical and material parameters. We linearize the model and use the singular value decomposition method to find the best fit parameters for the measured data. At 1550 nm, we determine n(Si(3)N(4))=1.977±0.003 for stoichiometric silicon nitride deposited using low-pressure chemical vapor deposition (LPCVD) technique and n(SiO(x))=1.428±0.011 for plasma-enhanced chemical vapor deposition (PECVD) oxide. By measuring the temperature sensitivities of microring resonant modes with different polarizations, we find the thermo-optic coefficient of the stoichiometric silicon nitride to be dn(Si(3)N(4))/dT=(2.45±0.09)×10(-5) (RIU/°C) and the PECVD oxide to be dn(SiO(x))/dT=(0.95±0.10)×10(-5) (RIU/°C).

  6. Mo{sub 2}NiB{sub 2}-type (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} and La{sub 2}Ni{sub 3}-type (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} compounds: Crystal structure and magnetic properties

    SciTech Connect

    Morozkin, A.V.; Isnard, O.; Nirmala, R.; Malik, S.K.

    2015-05-15

    The crystal structure of new Mo{sub 2}NiB{sub 2}-type (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} (Immm, No. 71, oI10) and La{sub 2}Ni{sub 3}-type (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} (Cmce No. 64, oC20) compounds has been established using powder X-ray diffraction studies. Magnetization measurements show that the Mo{sub 2}NiB{sub 2}-type Gd{sub 2}Ni{sub 2.35}Si{sub 0.65} undergoes a ferromagnetic transition at ~66 K, whereas isostructural Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} shows an antiferromagnetic transition at ~52 K and a field-induced metamagnetic transition at low temperatures. Neutron diffraction study shows that, in zero applied field, Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} exhibits c-axis antiferromagnetic order with propagation vector K=[1/2, 0, 1/2] below its magnetic ordering temperature and Tb magnetic moment reaches a value of 8.32(5) μ{sub B} at 2 K. The La{sub 2}Ni{sub 3}-type Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} exhibits ferromagnetic like transition at ~42 K with coexisting antiferromagnetic interactions and field induced metamagnetic transition below ~17 K. The magnetocaloric effect of Gd{sub 2}Ni{sub 2.35}Si{sub 0.65}, Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} is calculated in terms of isothermal magnetic entropy change and it reaches a maximum value of −14.3 J/kg K, −5.3 J/kg K and −10.3 J/kg K for a field change of 50 kOe near 66 K, 52 K and 42 K, respectively. Low temperature magnetic ordering with enhanced anisotropic effects in Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.35}Si{sub 0.65} is accompanied by a positive magnetocaloric effect with isothermal magnetic entropy changes of +12.8 J/kg K and ~+9.9 J/kg K, respectively at 7 K for a field change of 50 kOe. - Graphical abstract: The (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} supplement the series of Mo{sub 2}NiB{sub 2}-type rare earth compounds, whereas the (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} supplement the series of La{sub 2}Ni{sub 3}-type rare

  7. New orthorhombic derivative of CaCu{sub 5}-type structure: RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho), crystal structure and some magnetic properties

    SciTech Connect

    Morozkin, A.V.; Knotko, A.V.; Yapaskurt, V.O.; Yuan, Fang; Mozharivskyj, Y.; Nirmala, R.

    2013-12-15

    The crystal structure of new YNi{sub 4}Si-type RNi{sub 4}Si (R=Y, La, Ce, Sm, Gd–Ho) compounds has been established using powder X-ray diffraction. The YNi{sub 4}Si structure is a new structure type, which is orthorhombic derivative of CaCu{sub 5}-type structure (space group Cmmm N 65, oC12). GdNi{sub 4}Si and DyNi{sub 4}Si compounds order ferromagnetically at 25 and 19 K, respectively whereas YNi{sub 4}Si shows antiferromagnetic nature. At 15 K, DyNi{sub 4}Si shows second antiferromagnetic-like transition. The magnetic moment of GdNi{sub 4}Si at 5 K in 50 kOe field is ∼7.2 μ{sub B}/f.u. suggesting a completely ordered ferromagnetic state. The magnetocaloric effect of GdNi{sub 4}Si is calculated in terms of isothermal magnetic entropy change and it reaches the maximum value of −12.8 J/kg K for a field change of 50 kOe near T{sub C} ∼25 K. - Graphical abstract: The RNi{sub 4}Si (R=Y, La, Ce, Sm, Gd–Ho) compounds crystallize in new YNi{sub 4}Si-type structure which is orthorhombic derivative of the basic CaCu{sub 5}-type structure. GdNi{sub 4}Si and DyNi{sub 4}Si compounds show the ferromagnetic-like ordering, whereas.YNi{sub 4}Si has the antiferromagnetic nature. The GdNi{sub 4}Si demonstrates the big magnetocaloric effect near temperature of ferromagnetic ordering. The relationship between initial CaCu{sub 5}-type DyNi{sub 5} and YNi{sub 4}Si-type DyNi{sub 4}Si lattices.

  8. Multiple-Component Crystal Fabric Measurements from Acoustically-Generated Normal Modes in Borehole

    NASA Astrophysics Data System (ADS)

    Kluskiewicz, D. J.; Waddington, E. D.; McCarthy, M.; Anandakrishnan, S.; Voigt, D.; Matsuoka, K.

    2014-12-01

    Sound wave velocities in ice are a proxy of crystal orientation fabric. Because p- and s-waves respectively travel faster and slower in the direction of an ice crystal c-axis, the velocities of these waves in a fabric are related to the clustering of ice crystal c-axes in the direction of wave propagation. Previous sonic logs at Dome C, NGRIP, WAIS, and NEEM have inferred a single component fabric description from the velocities of vertically-propagating p-waves around each ice core borehole. These records supplement thin-section measurements of crystal fabric by sampling larger numbers of crystals in a depth-continuous log. Observations of azimuthally anisotropic vertical-girdle fabrics at ice-core sites such as WAIS, NGRIP, and EDML underly a benefit for logging methods that are sensitive to such fabrics. We present a theoretical framework for using borehole flexural modes to measure azimuthal crystal-fabric anisotropy, and describe ongoing efforts to develop a sonic logging tool for this purpose. We also present data from p-wave logs and thin section measurements at the WAIS Divide, and describe how a flexural wave log could supplement the existing measurements.

  9. Conoscopic polarized interference applied in measuring uniaxial axis direction of electro-optic crystal

    NASA Astrophysics Data System (ADS)

    Liu, Yong; Jiang, Hongzhen; Zhang, Lin; Li, Dong; Liu, Xu; Zheng, Fanglan

    2016-10-01

    The crystal can be used to be electro-optic switch because of its electro-optic modulation. Generally the uniaxial axis of electro-optic crystal is perpendicular to the light injection surface. Due to the manufacturing precision, the uniaxial axis direction has a little angle with the normal of the light injection surface, which affects the electro-optic modulation ability. In conoscopic polarized inference, due to birefraction the ordinary ray and extraordinary ray from crystal interferes after the polarizer. The interference pattern of crystal component is circle fringes with dark cross. The center of interference pattern has relation to the uniaxial axis direction. Using digital camera to capture the pattern and the center position of interferogram can be determinate by image processing program. In repeatability experiments the rms of center position is around 1 pixel. To measure the uniaxial axis direction, the normal direction of the crystal component should also be accurately determinate. Michelson interference method is introduced to determinate the normal direction. If rotate the crystal component around the normal direction in conoscopic polarized interference, the track of interferogram center is a circle theoretically. The circle center is related to the normal direction of crystal component, and the radii is related to the angle uniaxial axis, which can be determinate by least square fitting method. Experiment result shows that the measuring precision can achieves several tens of microradians.

  10. Phase diagram and thermal expansion measurements on the system URu2–xFexSi2

    DOE PAGES

    Ran, Sheng; Wolowiec, Christian T.; Jeon, Inho; ...

    2016-11-08

    Thermal expansion, electrical resistivity, magnetization, and specific heat measurements were performed on URu2–xFexSi2 single crystals for various values of Fe concentration x in both the hidden-order (HO) and large-moment antiferromagnetic (LMAFM) regions of the phase diagram. Our results show that the paramagnetic (PM) to HO and LMAFM phase transitions are manifested differently in the thermal expansion coefficient. The uniaxial pressure derivatives of the HO/LMAFM transition temperature T0 change dramatically when crossing from the HO to the LMAFM phase. The energy gap also changes consistently when crossing the phase boundary. In addition, for Fe concentrations at xc≈ 0.1, we observe twomore » features in the thermal expansion upon cooling, one that appears to be associated with the transition from the PM to the HO phase and another one at lower temperature that may be due to the transition from the HO to the LMAFM phase.« less

  11. Infrared measurement of undercooling during silicon solidification on bare and Si3N4 coated quartz substrates

    NASA Astrophysics Data System (ADS)

    Yang, C. F.; Tsoutsouva, M. G.; Hsu, H. P.; Lan, C. W.

    2016-11-01

    Undercooling is one of the most significant parameters in the solidification of silicon since it controls the grain structure formation, which determines the final performance of solar cell. Here a new and simple experimental facility is proposed to provide reliable undercooling values and visualize the melting-solidification process when silicon solidifies on a bare and a Si3N4 coated quartz (SiO2) substrate. A lamp heating system was used for the melting, the undercooling temperature was measured with the aid of an infrared single-color pyrometer while the morphologies of the growing silicon on the SiO2 and Si3N4-coated SiO2 substrates are also investigated through a digital microscope. The high precision and accuracy of the given undercooling values when using the present setup comes from the principle of minimizing the background radiation that can significantly influence the pyrometer measurements.

  12. Genetically designed L3 photonic crystal nanocavities with measured quality factor exceeding one million

    SciTech Connect

    Lai, Y.; Badolato, A.; Pirotta, S.; Urbinati, G.; Gerace, D.; Galli, M.; Minkov, M.; Savona, V.

    2014-06-16

    We report on the experimental realization of ultra-high quality factor (Q) designs of the L3-type photonic crystal nanocavity. Based on genetic optimization of the positions of few nearby holes, our design drastically improves the performance of the conventional L3 as experimentally confirmed by direct measurement of Q ≃ 2 × 10{sup 6} in a silicon-based photonic crystal membrane. Our devices rank among the highest Q/V ratios ever reported in photonic crystal cavities, holding great promise for the realization of integrated photonic platforms based on ultra-high-Q resonators.

  13. Integrated reflectivity measurements of hydrogen phthalate crystals for high-resolution soft x-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Zastrau, U.; Förster, E.

    2014-09-01

    The integrated x-ray reflectivity of Potassium Hydrogen Phthalate (KAP) and Rubidium Hydrogen Phthalate (RAP) crystals is studied at a photon energy of (1740±14) eV using a double-crystal setup. The absolute measured reflectivities are in < 5% agreement with the values predicted by the dynamic diffraction theory for perfect crystals when absorption is included. Within 4% experimental error margins, specimen that were exposed to ambient conditions over many years show identical reflectivity as specimen that were cleaved just before the measurement. No differences are observed between cleaving off a 10 μm surface layer and splitting the entire crystal bulk of 2 mm thickness. We conclude that at 1.7 keV photon energy the penetration depth of ~ 1 μm is large compared to a potentially deteriorated surface layer of a few 10 nm.

  14. Measurement of Stress/Strain in Single-Crystal Samples using Diffraction

    SciTech Connect

    Yan,H.; Noyan, I.

    2006-01-01

    Diffraction profiles from an Si-single-crystal strip deformed in cantilever bending are presented as a function of tip displacement and incident-beam energy. Data obtained with slit-based diffracted-beam optics contain a secondary peak in addition to the primary 004 reflection for all energies when the bending strain is finite. This secondary peak can be identified as a 'mirage' peak, predicted by dynamical diffraction theory to occur in weakly deformed single-crystal samples. The integrated intensity of this mirage peak increases with increasing energy and tip displacement and exceeds the primary peak intensity at higher values. The mirage peak disappears when a monochromator is used in the diffracted-beam path. Data that show the effect of these mirage peaks on X-ray diffraction strain analysis are presented, and it is shown that a diffracted-beam monochromator may be used to eliminate these errors.

  15. Mesoporous Nb2O5/SiO2 material obtained by sol-gel method and applied as adsorbent of crystal violet dye.

    PubMed

    Umpierres, Cibele S; Prola, Lizie D T; Adebayo, Matthew A; Lima, Eder C; Dos Reis, Glaydson S; Kunzler, Diego D F; Dotto, G L; Arenas, Leliz T; Benvenutti, Edilson V

    2017-03-01

    In this work, SiO2/Nb2O5 (SiNb) material was prepared using sol-gel method and employed as adsorbent for removal of crystal violet dye (CV). The material was characterized using nitrogen adsorption-desorption isotherms, FTIR spectroscopy, pHpzc, and SEM-EDS. The analysis of N2 isotherms revealed the presence of micro- and mesopores in the SiNb sample with specific surface area as high as 747 m(2) g(-1). For the CV adsorption process, variations of several parameters such as of pH, temperature, contact time, and concentration of dye of the process were evaluated. The optimum initial pH of the CV dye solution was 7.0. The adsorption kinetic and equilibrium data for CV adsorption were suitably represented by the general-order and Liu models, respectively. The maximum adsorption capacity of the CV dye by SiNb was achieved at 303 K, which attained 116 mg g(-1) at this temperaure. Dye effluents were simulated and used to check the applicability of the SiNb material for treatment of effluents - the material showed very good efficiency for decolorization of dye effluents.

  16. Syntheses, crystal structures, and NLO properties of the quaternary sulfides RE3Sb0.33SiS7 (RE=La, Pr)

    NASA Astrophysics Data System (ADS)

    Zhao, Hua-Jun

    2015-07-01

    Two quaternary sulfides RE3Sb0.33SiS7 (RE=La, Pr) have been prepared from stoichiometric mixtures of elements at 1223 K in an evacuated silica tube. They are the first examples of chalcogenides in the quaternary RE/Si/Sb/Q (RE=rare earth metal; Q=S, Se, Te) system. These two isostructural materials crystallize in the Ce3Al1.67S7 structure type in the hexagonal space group P63. Their structure features one-dimensional chains of face-sharing SbS6 octahedra running parallel to the c direction surrounded by the discrete SiS4 tetrahedra and RE cations. The La3Sb0.33SiS7 exhibits a SHG signal about 0.5 times that of the commercially used IR NLO material AgGaS2 at 2.05 μm laser. The optical gap of 1.92 eV for La3Sb0.33SiS7 was deduced from UV/Vis reflectance spectroscopy.

  17. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: Crystal structure and magnetic properties of Nd(Mn1-xFex)2Si2 compounds

    NASA Astrophysics Data System (ADS)

    Chen, Ye-Qing; Luo, Jun; Liang, Jing-Kui; Li, Jing-Bo; Rao, Guang-Hui

    2009-11-01

    X-ray powder diffraction, resistivity and magnetization studies have been performed on polycrystalline Nd(FexMn1-x)2Si2 (0 <= x <= 1) compounds which crystallize in a ThCr2Si2-type structure with the space group I4/mmm. The field-cooled temperature dependence of the magnetization curves shows that, at low temperatures, NdFe2Si2 is antiferromagnetic, while the other compounds show ferromagnetic behaviour. The substitution of Fe for Mn leads to a decrease in lattice parameters a, c and unit-cell volume V. The Curie temperature of the compounds first increases, reaches a maximum around x = 0.7, then decreases with Fe content. However, the saturation magnetization decreases monotonically with increasing Fe content. This Fe concentration dependent magnetization of Nd(FexMn1-x)2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe. The temperature's square dependence on electrical resistivity indicates that the curve of Nd(Fe0.6Mn0.4)2Si2 has a quasi-linear character above its Curie temperature, which is typical of simple metals.

  18. Nb{sub 2}OsB{sub 2}, with a new twofold superstructure of the U{sub 3}Si{sub 2} type: Synthesis, crystal chemistry and chemical bonding

    SciTech Connect

    Mbarki, Mohammed; Touzani, Rachid St.; Fokwa, Boniface P.T.

    2013-07-15

    The new ternary metal-rich boride, Nb{sub 2}OsB{sub 2}, was synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The compound was characterized from single-crystal X-ray data and EDX measurements. It crystallizes as a new superstructure (space group P4/mnc, no. 128) of the tetragonal U{sub 3}Si{sub 2}-structure type with lattice parameters a=5.922(1) Å and c=6.879(2) Å. All of the B atoms are involved in B{sub 2} dumbbells with B–B distances of 1.89(4) Å. Structure relaxation using VASP (Vienna ab intio Simulation Package) has confirmed the space group and the lattice parameters. According to electronic structure calculations (TB–LMTO–ASA), the homoatomic B–B interactions are optimized and very strong, but relatively strong heteroatomic Os–B, Nb–B and Nb–Os bonds are also found: These interactions, which together build a three-dimensional network, are mainly responsible for the structural stability of this new phase. The density of state at the Fermi level predicts metallic behavior, as expected, from this metal-rich boride. - Graphical abstract: Nb{sub 2}OsB{sub 2} is, to the best of our knowledge, the first fully characterized phase in the ternary Nb–Os–B system. It crystallizes (space group P4/mnc, 128) with a new twofold superstructure of the U{sub 3}Si{sub 2} structure type (space group P4/mbm, 127), and is therefore the first boride in this structure family crystallizing with a superstructure of the U{sub 3}Si{sub 2} structure type. We show that the distortions leading to this superstructure occurs mainly in the Nb-layer, which tries to accommodate the large osmium atoms. The consequence of this puckering is the building osmium dumbbells instead of chains along [001]. - Highlights: • First compound in the Nb–Os–B system. • New twofold superstructure of U{sub 3}Si{sub 2} structure type. • Puckering of Nb-layer responsible for superstructure occurrence. • Chemical bonding studied

  19. A combined metal-halide/metal flux synthetic route towards type-I clathrates: crystal structures and thermoelectric properties of A8Al8Si38 (A = K, Rb, and Cs).

    PubMed

    Baran, Volodymyr; Senyshyn, Anatoliy; Karttunen, Antti J; Fischer, Andreas; Scherer, Wolfgang; Raudaschl-Sieber, Gabriele; Fässler, Thomas F

    2014-11-10

    Single-phase samples of the compounds K8Al8Si38 (1), Rb8Al8Si38 (2), and Cs7.9Al7.9Si38.1 (3) were obtained with high crystallinity and in good quantities by using a novel flux method with two different flux materials, such as Al and the respective alkali-metal halide salt (KBr, RbCl, and CsCl). This approach facilitates the removal of the product mixture from the container and also allows convenient extraction of the flux media due to the good solubility of the halide salts in water. The products were analyzed by means of single-crystal X-ray structure determination, powder X-ray and neutron diffraction experiments, (27)Al-MAS NMR spectroscopy measurements, quantum chemical calculations, as well as magnetic and transport measurements (thermal conductivity, electrical resistivity, and Seebeck coefficient). Due to the excellent quality of the neutron diffraction data, the difference between the nuclear scattering factors of silicon and aluminum atoms was sufficient to refine their mixed occupancy at specific sites. The role of variable-range hopping for the interpretation of the resistivity and the Seebeck coefficient is discussed.

  20. Stability and Occurrence of the Molecule-Containing SiO2 Clathrate Melanophlogite: Metastable Crystallization from a Colloid or Gel?

    NASA Astrophysics Data System (ADS)

    Geiger, C. A.; Dachs, E.

    2008-12-01

    The mineral melanophlogite is the only known natural SiO2 clathrate. It has been found in a number of localities worldwide in different low-temperature geologic environments. Melanophlogite's thermodynamic stability is not known. Low-temperature hydrothermal laboratory experiments indicate that structure-directing agents and colloid formation are needed for crystallization. The formation of silica-rich colloids/gels and following crystal growth can be observed in glass-ampoule synthesis experiments. In order to better address these issues, the heat capacities of two different molecule-containing melanophlogites of approximate composition 46SiO2·1.80CH4·3.54N2·1.02CO2 from Mt. Hamilton, CA and 46SiO2·3.59CH4·3.10N2·1.31CO2 from Racalmuto, Sicily, along with a heated (molecule-free) sample of composition SiO2, were studied between 5 and 300 K using heat- pulse microcalorimetry. The molecule-free sample was obtained by heating a natural Racalmuto sample at 1173 K for 24 hr. It has a slightly larger low-temperature heat capacity and standard third-law entropy compared to other low-density SiO2 polymorphs such as various zeosils. The standard third-law entropy of the molecule-free sample is S° = 2216.3 J/(mol·K) for 46SiO2 and the natural Mt. Hamilton and Racalmuto samples give S° = 2805.7 J/(mol·K) and S° = 2956.8 J/(mol· K), respectively. The entropy and Gibbs free energy for molecule-free melanophlogite relative to quartz at 298 K are Δ Strans = 6.7 J/(mol·K) and Δ Gtrans = 7.5 kJ/mol, respectively and, thus, it does not have a thermodynamic field of stability in the SiO2 system. The difference in Cp values between molecule-containing and molecule-free melanophlogite is characterized by an increase in Cp from 0 K to approximately 70 K and then reaches a roughly constant value at 70 K < T < 250 K. The Δ Srxn at 298 K for 46SiO2(melan.) + xCH4(gas) + yCO2(gas) + zN2(gas) = 46SiO2·(xCH4)12·(yCO2, zN2)14 is estimated to be about -642 J/(mol·K) and -802