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Sample records for si crystals measured

  1. Measurement of Thermal Conductivity of Anisotropic SiC Crystal

    NASA Astrophysics Data System (ADS)

    Su, Guo-Ping; Zheng, Xing-Hua; Qiu, Lin; Tang, Da-Wei; Zhu, Jie

    2013-12-01

    Silicon carbide (SiC) crystals with excellent heat conduction and thermal stability can be widely used in microelectronic devices and integrated circuits. It is important for the study of a functional type SiC material to have accurate thermal-conductivity and thermal-diffusivity values of SiC crystal. A 3 ω technique is employed to determine the anisotropic thermal conductivity of SiC crystal. Three micrometal probes with different widths are deposited by chemical-vapor deposition on the surface of SiC crystal. Each micrometal probe is used as a heater, and also as a thermometer. The temperature fluctuation signals of a micrometal probe represent heat conduction in different directions in the specimen. Thermal conductivities both in the cross-plane and in-plane directions of SiC crystal are achieved through fitted values. The results indicate that thermal conductivities in three different directions of SiC crystal can be characterized using the metal heater construction.

  2. Temperature and Field Induced Strain Measurements in Single Crystal Gd5Si2Ge2

    NASA Astrophysics Data System (ADS)

    McCall, S. K.; Nersessian, N.; Carman, G. P.; Pecharsky, V. K.; Schlagel, D. L.; Radousky, H. B.

    2016-06-01

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of -8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of -8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.

  3. Improved measurement results for the Avogadro constant using a 28Si-enriched crystal

    NASA Astrophysics Data System (ADS)

    Azuma, Y.; Barat, P.; Bartl, G.; Bettin, H.; Borys, M.; Busch, I.; Cibik, L.; D'Agostino, G.; Fujii, K.; Fujimoto, H.; Hioki, A.; Krumrey, M.; Kuetgens, U.; Kuramoto, N.; Mana, G.; Massa, E.; Meeß, R.; Mizushima, S.; Narukawa, T.; Nicolaus, A.; Pramann, A.; Rabb, S. A.; Rienitz, O.; Sasso, C.; Stock, M.; Vocke, R. D., Jr.; Waseda, A.; Wundrack, S.; Zakel, S.

    2015-04-01

    New results are reported from an ongoing international research effort to accurately determine the Avogadro constant by counting the atoms in an isotopically enriched silicon crystal. The surfaces of two 28Si-enriched spheres were decontaminated and reworked in order to produce an outer surface without metal contamination and improved sphericity. New measurements were then made on these two reconditioned spheres using improved methods and apparatuses. When combined with other recently refined parameter measurements, the Avogadro constant derived from these new results has a value of NA = 6.022 140 76(12) × 1023 mol-1. The x-ray crystal density method has thus achieved the target relative standard uncertainty of 2.0  ×  10-8 necessary for the realization of the definition of the new kilogram.

  4. Temperature and field induced strain measurements in single crystal Gd5Si2Ge2

    DOE PAGES

    McCall, S. K.; Nersessian, N.; Carman, G. P.; Pecharsky, V. K.; Schlagel, D. L.; Radousky, H. B.

    2016-03-29

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of –8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of –8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Furthermore,more » using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.« less

  5. Nanocalorimetry: Using Si-micromachined Devices for Thermodynamic Measurements of Thin Films and Tiny Crystals

    NASA Astrophysics Data System (ADS)

    Hellman, Frances

    2006-03-01

    We have used Si micromachining to fabricate membrane-based calorimeters for measuring thermodynamic properties of microgram-quantity samples over a temperature range from 1.7 to 550K in magnetic fields to 8T. Prototype scaled down devices have been made which allow precise measurements of nanogram quantities. Different types of thermometers are used for different purposes and in different temperature ranges. Current development efforts are extending the temperature range to 0.3 - 800K, and we are collaborating with the national high magnetic field lab to extend the field range to 65T in pulsed magnets. These devices are particularly useful for specific heat measurements of thin film samples (100-400 nm thick) deposited directly onto the membrane through a Si micromachined evaporation mask. They have also been used for small bulk samples attached by conducting paint or In, and for powder samples dissolved in a solvent and dropped onto devices. The measurement technique used (relaxation method) is particularly suited to high fields because thermal conductance is measured in zero field and is field independent, while the relaxation time constant does not depend on thermometer calibration. The devices have been used with little modification for thermal conductivity and thermopower measurements, and are well suited to measurements of calorimetric signals such as those occurring at phase transitions or under irreversible thermal behavior. I will discuss device fabrication and thermal analysis which allow us to precisely identify heat flow in the devices and consequent limits on the absolute accuracy, as well as possible future directions for device development. I will also briefly discuss examples of measurements on several materials of current interest: 1) amorphous Si and its alloys, 2) high precision critical temperature studies of La1-xSrxMnO3 and La1-xCaxMnO3, 3) antiferromagnetic CoO nanoparticles and thin layers, 4) Fe/Cr giant magnetoresistance multilayers.

  6. Strain distribution in an Si single crystal measured by interference fringes of X-ray mirage diffraction.

    PubMed

    Jongsukswat, Sukswat; Fukamachi, Tomoe; Ju, Dongying; Negishi, Riichirou; Hirano, Keiichi; Kawamura, Takaaki

    2013-10-01

    In X-ray interference fringes accompanied by mirage diffraction, variations have been observed in the spacing and position of the fringes from a plane-parallel Si single crystal fixed at one end as a function of distance from the incident plane of the X-rays to the free crystal end. The variations can be explained by distortion of the sample crystal due to gravity. From the variations and positions of the fringes, the strain gradient of the crystal has been determined. The distribution of the observed strain agrees with that expected from rod theory except for residual strain. When the distortion is large, the observed strain distribution does not agree with that expected from rod theory. PMID:24068841

  7. Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy

    SciTech Connect

    Herrera-Gomez, A. |; Rousseau, P.M.; Woicik, J.C.; Kendelewicz, T.; Plummer, J.; Spicer, W.E.

    1999-02-01

    In an earlier letter [Appl. Phys. Lett. {bold 68}, 3090 (1996)] we reported results about heavily arsenic doped silicon crystals, where we unambiguously showed, based on x-ray standing wave spectroscopy (XSW) and other techniques, that electrically deactivated As remains essentially substitutional. In this article we present the analysis methodology that led us to said conclusion, and show how from further analysis it is possible to extract the compression or expansion of thin epitaxial layers. We report the evolution of the compression of highly As doped Si epitaxial layers as deactivation takes place. The XSW measurements required a very small thickness of the doped layer and a perfect registry between the substrate and the surface layer. We found larger values for compression than previously reported, which may be explained by the absence of structural defects on our samples that relax the interface stress. Our results show a saturation on the compression as the electron concentration increases. We also report an estimation of the small displacement from perfect substitutional positions suffered by deactivated As. {copyright} {ital 1999 American Institute of Physics.}

  8. Group delay dispersion measurement of Yb:Gd(2)SiO(5), Yb:GdYSiO(5) and Yb:LuYSiO(5)crystal with white-light interferometry.

    PubMed

    Yang, Weijian; Li, Jing; Zhang, Fan; Zhang, Yuanyang; Zhang, Zhigang; Zhao, Guangjun; Zheng, Lihe; Xu, Jun; Su, Liangbi

    2007-06-25

    We report the measured group delay dispersion (GDD) of new crystals Yb:Gd(2)SiO,(5)(Yb:GSO), Yb:GdYSiO(5) (Yb:GYSO) and Yb:LuYSiO(5) (Yb:LYSO) over wavelengths from 1000nm to 1200nm, with a white-light interferometer. Those GDD data should be useful for the dispersion compensation for femtosecond pulse generation in the lasers with these new crystals as the gain media.

  9. Three-dimensional Si/Ge quantum dot crystals.

    PubMed

    Grützmacher, Detlev; Fromherz, Thomas; Dais, Christian; Stangl, Julian; Müller, Elisabeth; Ekinci, Yasin; Solak, Harun H; Sigg, Hans; Lechner, Rainer T; Wintersberger, Eugen; Birner, Stefan; Holý, Vaclav; Bauer, Günther

    2007-10-01

    Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered

  10. Fabrication of crystal α-Si₃N₄/Si-SiOx core-shell/Au-SiOx peapod-like axial double heterostructures for optoelectronic applications.

    PubMed

    Nie, Tianxiao; Chen, Zhi-Gang; Wu, Yueqin; Guo, Yanan; Zhang, Jiuzhan; Fan, Yongliang; Yang, Xinju; Jiang, Zuimin; Zou, Jin

    2012-08-01

    Novel crystal α-Si(3)N(4)/Si-SiO(x) core-shell/Au-SiO(x) peapod-like axial double heterostructural nanowires were obtained by directly annealing a Au covered SiO(2) thin film on a Si substrate. Our extensive electron microscopic investigation revealed that the α-Si(3)N(4) sections with a mathematical left angle bracket 101 mathematical right angle bracket growth direction were grown first, followed by growth of the Si-SiO(x) core-shell sections and finally growth of the Au-SiO(x) peapod-like sections. Through a series of systematically comparative experiments, a temperature-dependent multi-step vapor-liquid-solid growth mechanism is proposed. Room temperature photoluminescence measurement of individual nanowires reveals two emission peaks (410 and 515 nm), indicating their potential applications in light sources, laser or light emitting display devices.

  11. Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

    SciTech Connect

    Abrams, K. J.; Greaves, G.; Berg, J. A. van den; Hinks, J. A.; Donnelly, S. E.; Pawley, C. J.; Eyidi, D.; Ward, M. B.

    2012-04-15

    Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin ({approx_equal}55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change.

  12. Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    1997-01-01

    We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

  13. Diffusion-driven crystal structure transformation: synthesis of Heusler alloy Fe3Si nanowires.

    PubMed

    Seo, Kwanyong; Bagkar, Nitin; Kim, Si-in; In, Juneho; Yoon, Hana; Jo, Younghun; Kim, Bongsoo

    2010-09-01

    We report fabrication of Heusler alloy Fe(3)Si nanowires by a diffusion-driven crystal structure transformation method from paramagnetic FeSi nanowires. Magnetic measurements of the Fe(3)Si nanowire ensemble show high-temperature ferromagnetic properties with T(c) > 370 K. This methodology is also successfully applied to Co(2)Si nanowires in order to obtain metal-rich nanowires (Co) as another evidence of the structural transformation process. Our newly developed nanowire crystal transformation method would be valuable as a general method to fabricate metal-rich silicide nanowires that are otherwise difficult to synthesize.

  14. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    PubMed

    Pramann, Axel; Rienitz, Olaf

    2016-06-01

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  15. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    PubMed

    Pramann, Axel; Rienitz, Olaf

    2016-06-01

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram. PMID:27173726

  16. Effect of Pt Doping on Nucleation and Crystallization in Li2O.2SiO2 Glass: Experimental Measurements and Computer Modeling

    NASA Technical Reports Server (NTRS)

    Narayan, K. Lakshmi; Kelton, K. F.; Ray, C. S.

    1996-01-01

    Heterogeneous nucleation and its effects on the crystallization of lithium disilicate glass containing small amounts of Pt are investigated. Measurements of the nucleation frequencies and induction times with and without Pt are shown to be consistent with predictions based on the classical nucleation theory. A realistic computer model for the transformation is presented. Computed differential thermal analysis data (such as crystallization rates as a function of time and temperature) are shown to be in good agreement with experimental results. This modeling provides a new, more quantitative method for analyzing calorimetric data.

  17. Diamond turning of Si and Ge single crystals

    SciTech Connect

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  18. Fabrication of nanometer single crystal metallic CoSi2 structures on Si

    NASA Technical Reports Server (NTRS)

    Nieh, Kai-Wei (Inventor); Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor)

    1991-01-01

    Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

  19. Crystal field excitations of YbMn2Si2

    NASA Astrophysics Data System (ADS)

    Mole, R. A.; Hofmann, M.; Adroja, D. T.; Moze, O.; Campbell, S. J.

    2013-12-01

    The crystal field excitations of the rare earth intermetallic compound YbMn2Si2 have been measured by inelastic neutron scattering over the temperature range 2.5-50 K. The YbMn2Si2 spectra exhibit three low energy excitations (~3-7 meV) in the antiferromagnetic AFil region above the magnetic phase transition at TN2 = 30(5) K. The crystal field parameters have been determined for YbMn2Si2 in the antiferromagnetic AFil region. A further two inelastic excitations (~9 meV, 17 meV) are observed below TN2=30(5) K, the temperature at which the high temperature antiferromagnetic structure is reported to exhibit doubling of the magnetic cell. Energy level diagrams have been determined for Yb3+ ions in the different sites above (single site) and below the magnetic transition temperature (two sites). The excitation energies for both sites are shown to be temperature independent with the temperature dependences of the transition intensities for the two sites described well by a simple Boltzmann model. The spectra below TN2 cannot be described fully in terms of molecular field models based on either a single Yb3+ site or two Yb3+ sites. This indicates that the magnetic behaviour of YbMn2Si2 is more complicated than previously considered. The inability to account fully for excitations below the magnetic phase transition may be due to an, as yet, unresolved structural transition associated with the magnetic transition.

  20. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2010-01-01

    Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

  1. Crystal growth and characterization of Mg2Si for IR-detectors and thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Udono, Haruhiko; Tajima, Hiroyuki; Uchikoshi, Masahito; Itakura, Masaru

    2015-07-01

    We have investigated the melt growth of Mg2Si crystal and its electrical and optical properties. Progress in Mg source purity and stoichiometric control during the growth enabled the development of a high purity Mg2Si crystal with low carrier density and a high stable Mg2Si with good doping controllability. The Mg2Si crystal grown by the pressure controlled Bridgman method using 5N purity or 6N purity of Mg source and purified PG crucible showed low electron density (˜1015 cm-3) and high electron mobility (485 cm2 V-1 s-1 at 300 K and 21900 cm2 V-1 s-1 at 40 K). Silver doping in the high purity crystals performed the low-hole density of p-type Mg2Si (˜3 × 1016 cm-3). Ionization energy of residual Al donor in the high purity crystal and Ag acceptor in the Ag doped crystals was determined as 8-9 meV and 26 meV, respectively. Indirect band gap energy Eg of approximately 0.61 eV at 300 K and 0.69 eV at 4 K were estimated by the optical transmission measurements on the high purity crystals. It is also found that the Sb-doped melt grown crystal had good power factor around room temperature (26 µW cm-1 K-2 at 270 K).

  2. Crystal growth of mixed AlN-SiC bulk crystals

    NASA Astrophysics Data System (ADS)

    Filip, Octavian; Bickermann, Matthias; Epelbaum, Boris M.; Heimann, Paul; Winnacker, Albrecht

    2010-09-01

    Bulk AlN-SiC mixed single crystals are prepared by sublimation growth employing pure AlN or mixed AlN-SiC sources and 6H-SiC seed crystals. As the growth temperature is increased from 1900 to 2050 °C, using seeds with different off-axis orientations, inclined up to 42° from the basal plane toward the (0 1 -1 0)-plane, or using different source materials, crystals with different Si/C contents are obtained. Dependent on the Si and/or C content, crystal coloration changes from yellowish to greenish to blackish. Modification in crystals' coloration and corresponding changes in below band-gap optical absorption and cathodoluminescence spectra are discussed.

  3. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer.

    PubMed

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-01-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm(2) above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers. PMID:26601894

  4. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

    PubMed Central

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-01-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers. PMID:26601894

  5. Synthesis and characterization of Mo 3Si single crystal

    NASA Astrophysics Data System (ADS)

    Rosales, I.

    2008-08-01

    Mo 3Si single crystals were successfully produced using an optical floating zone furnace. Reoriented specimens were obtained from the original crystal with <1 1 1>, <1 1 0> and <1 0 0> orientations. Cracking behavior of the crystals shows an interesting relation regarding their crystal orientation. Fracture toughness values show small orientation dependence. The hardness test shows that the hard plane is the (1 0 0), and the softest plane was the (1 1 0) and not the (1 1 1) as it was expected.

  6. Single-crystal, Si nanotubes, and their mechanical resonant properties.

    PubMed

    Quitoriano, Nathaniel J; Belov, Miro; Evoy, Stephane; Kamins, Theodore I

    2009-04-01

    Single-crystalline Si nanotubes (NTs) were fabricated using vapor-liquid-solid grown, Ge nanowires (NWs) as a template upon which a Si shell was deposited to first grow Ge-core, Si-shell NWs. The tips of these NWs were removed, enabling exposure of the Ge core to H(2)SO(4) and H(2)O(2). After removing the Ge core, single-crystalline Si NTs remained. In addition to growing these Ge-core, Si-shell NWs from a Si (111) substrate, these NWs were also grown horizontally from a vertical Si surface to enable the fabrication of horizontal NTs after focused ion-beam cutting and etching steps. The resonant properties of the Ge-core, Si-shell NW, and the Si NT after the cutting and etching steps were measured and found to have a quality factor, Q, of approximately 1800. PMID:19271766

  7. Advanced Si solid phase crystallization for vertical channel in vertical NANDs

    SciTech Connect

    Lee, Sangsoo; Son, Yong-Hoon; Hwang, Kihyun; Shin, Yoo Gyun; Yoon, Euijoon

    2014-07-01

    The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.

  8. Transmission function and thermal conductivity of Si phononic crystals

    NASA Astrophysics Data System (ADS)

    Oh, Jung Hyun; Jang, Moon-Gyu; Moon, S. E.; Shin, Mincheol

    2016-10-01

    We investigate phonon transport properties of Si phononic crystals by using an atomistic Green function method. By varying form factors such as thickness, orientation, and pore size of unit cells, mean-free path and associated thermal conductivity of phononic crystals are obtained. We present the empirical formula for thermal conductivity as a function of cell size and, by extrapolating results from it for realistic cell sizes, the thermal conductivity is compared with experimental ones. The formula is found to predict a nearly equal amount of the suppression in thermal conductivity to the experimental values, implying a feasible calculation method for predicting thermal properties of phononic crystals.

  9. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  10. Strain relaxation of GaAs/Ge crystals on patterned Si substrates

    SciTech Connect

    Taboada, A. G. Kreiliger, T.; Falub, C. V.; Känel, H. von; Isa, F.; Isella, G.; Salvalaglio, M.; Miglio, L.; Wewior, L.; Fuster, D.; Alén, B.; Niedermann, P.; Neels, A.; Dommann, A.; Mancarella, F.

    2014-01-13

    We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

  11. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2011-01-01

    Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

  12. Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion

    NASA Astrophysics Data System (ADS)

    Li, Xinlu; Feng, Shuang; Liu, Xiuhuan; Hou, Lixin; Gao, Yanjun; Wang, Qi; Liu, Nian; Zhang, Hai; Chen, Zhanguo; Zheng, Jie; Jia, Gang

    2014-07-01

    The method of high temperature thermal diffusion was successfully applied for doping Si impurities into cubic boron nitride (cBN) crystals. X-ray photoelectron spectra (XPS) and the current-voltage (I-V) characteristics at different temperatures were respectively used for analyzing the chemical states and the activation energy of Si impurity in cBN. According to the XPS results, Si impurities mainly replace B atoms bonding with the adjacent N atoms and become donors in cBN. Without surface cleaning, there are a lot of C and O contaminations on the surface of cBN, so a small quantity of C-Si and Si-N-O bonds also exist at the surface of cBN. Most Si impurities distribute in the shallow layer underneath the surface of cBN. Based on the electric measurement, Si impurities in cBN usually have the activation energy beyond 0.4 eV, and they can only be slightly ionized at room temperature, therefore the resistivity of Si-doped cBN is still high, and the space charge limited current becomes the main conductive mechanism in cBN. However, the conductivity of Si-doped cBN can rapidly increase with the temperature. In addition, the activation energy and the concentration of Si impurity in cBN can be affected by the temperature and the time of thermal diffusion, which needs to be verified further.

  13. Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc

    SciTech Connect

    Ou, Sin-Liang; Kuo, Po-Cheng; Tsai, Tsung-Lin; Chen, Sheng-Chi; Yeh, Chin-Yen; Chang, Han-Feng; Lee, Chao-Te; Chiang, Donyau

    2011-09-19

    The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu{sub 3}Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu{sub 3}Si nucleation sites as the film was annealed at 270 deg. C. After heating to 500 deg. C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4x BD-R with the bottom jitter values below 6.5%.

  14. Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method

    NASA Astrophysics Data System (ADS)

    Thi Kieu Lien, Mai; Horita, Susumu

    2016-03-01

    Amorphous Si thin films on yttria-stabilized zirconia (YSZ) layers were crystallized widely in solid phase by the two-step method with a pulsed laser, moving the sample stage. The crystalline quality, impurity diffusion, and electrical properties of the crystallized Si films were investigated. It was found that the crystallinity of the Si thin films was improved and their surface was smooth without an incubation layer at the interface, indicating the uniform crystallinity of Si on YSZ. The diffusion of Zr and Y into the Si thin films was as small as or smaller than the order of 1017 atoms/cm3. We evaluated the electrical properties of carrier concentration and Hall mobility of the Si thin films with/without YSZ layers by using the resistivity and AC Hall effect measurements. The temperature and doping concentration dependences were measured for both undoped and P-doped films. It was found that both the undoped and P-doped Si/YSZ/glass films showed higher mobilities and carrier concentrations (and therefore higher conductivities), which indicate a smaller number of defects, than the Si/glass films. This suggested that the Si film crystallized on the YSZ layer is more suitable for application to electronic devices than the Si film on glass.

  15. Piezoelectric Ca3NbGa3Si2O14 crystal: crystal growth, piezoelectric and acoustic properties

    NASA Astrophysics Data System (ADS)

    Roshchupkin, Dmitry; Ortega, Luc; Plotitcyna, Olga; Erko, Alexei; Zizak, Ivo; Vadilonga, Simone; Irzhak, Dmitry; Emelin, Evgenii; Buzanov, Oleg; Leitenberger, Wolfram

    2016-08-01

    Ca3NbGa3Si2O14 (CNGS), a five-component crystal of lanthanum-gallium silicate group, was grown by the Czochralski method. The parameters of the elementary unit cell of the crystal were measured by powder diffraction. The independent piezoelectric strain coefficients d{}_{11} and d_{14} were determined by the triple-axis X-ray diffraction in the Bragg and Laue geometries. Excitation and propagation of surface acoustic waves (SAW) were studied by high-resolution X-ray diffraction at BESSY II synchrotron radiation source. The velocity of SAW propagation and power flow angles in the Y-, X- and yxl/{+}36°-cuts of the CNGS crystal were determined from the analysis of the diffraction spectra. The CNGS crystal was found practically isotropic by its acoustic properties.

  16. Crystal structure of laser-induced subsurface modifications in Si

    SciTech Connect

    Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in ’t Veld, A. J.

    2015-06-04

    Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.

  17. Photochemical switching behavior of azofunctionalized polymer liquid crystal/SiO{sub 2} composite photonic crystal

    SciTech Connect

    Moritsugu, M.; Kim, S. N.; Ogata, T.; Nonaka, T.; Kurihara, S.; Kubo, S.; Segawa, H.; Sato, O.

    2006-10-09

    A photochemically tunable photonic crystal was prepared by infiltrating azopolymer liquid crystal in a SiO{sub 2} inverse opal structure. The SiO{sub 2} inverse opal film obtained reflected a light corresponding to the periodicity as well as the refractive indices of the inverse opal structure. Linearly polarized light irradiation shifted the reflection band to longer wavelength more than 15 nm. This is caused by the formation of anisotropic molecular orientation of the azopolymer. The switched state was stable in the dark, and the reversible switching of the reflection band can be achieved by the linearly and circularly polarized light irradiations.

  18. Growth and characterization of large CdSiP 2 single crystals

    NASA Astrophysics Data System (ADS)

    Zawilski, Kevin T.; Schunemann, Peter G.; Pollak, Thomas C.; Zelmon, David E.; Fernelius, Nils C.; Kenneth Hopkins, F.

    2010-04-01

    Large, optically transparent crystals of CdSiP 2 (CSP) have been grown for the first time from a stoichiometric melt. The material is a high temperature analog to ZnGeP 2 with promising characteristics for IR frequency conversion. Crystals are birefringent and are transparent from 0.5 to 9 μm. Polycrystalline charges were successfully synthesized from high purity elemental starting materials by two-temperature vapor transport despite the very high equilibrium vapor pressure (˜22 atm) at the melting point of CdSiP 2 (1133 °C). Single crystals were grown using the horizontal gradient freeze (HGF) technique in high-temperature transparent furnaces. Over the course of several growth runs, the material proved to be prone to cracking and to twinning along (1 1 2) planes. Twinning was eliminated by seeded growth along directions normal to the 112 planar boundaries. Further modifications to growth conditions resulted in high optical quality, crack- and twin-free single crystals 70×25×8 mm 3. The largest CdSiP 2 single crystals previously reported in the literature were grown through either halogen assisted vapor transport or from a molten Sn flux and measured 2×2×0.2 mm 3. The HGF growth of large CdSiP 2 crystals has allowed several bulk properties to be measured for the first time, including the thermal expansion coefficients, thermal conductivity, and wavelength dependent birefringence and dispersion. Measurements of the optical and thermal properties reveal this to be an extremely promising material for 1-, 1.5-, and 2 μm-pumped mid-IR lasers.

  19. NMR study of crystallization in MgO-CaO-SiO 2-P 2O 5 glass-ceramics

    NASA Astrophysics Data System (ADS)

    Ren, Hai-Lan; Yue, Yong; Ye, Chao-Hui; Guo, Li-Ping; Lei, Jia-Heng

    1998-08-01

    29Si and 31P magic-angle-spinning (MAS) nuclear magnetic resonance (NMR) measurements were employed to investigate crystallization in MgO-CaO-SiO 2-P 2O 5 bioglass-ceramics. The results suggest that wollastonite (β-CaSiO 3) is separated as a new crystalline phase, corresponding to the appearance of a sharp signal in the 29Si MAS NMR spectra, while oxyapatite (Ca 10(PO 4) 6O) forms in the process of the order of the phosphorus-rich phases increasing as a whole, corresponding to the gradual narrowing of 31P MAS NMR spectra. ZnO can make the glass stable and difficult to crystallize at a low temperature, while at a high temperature, ZnO can participate in the crystallization of β-CaSiO 3 and promote it.

  20. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Edgar, J. H.; Liu, L.; Liu, B.; Zhuang, D.; Chaudhuri, J.; Kuball, M.; Rajasingam, S.

    2002-12-01

    The properties of bulk AlN crystals grown by sublimation recondensation and either randomly nucleated (i.e. self-seeded) or seeded on 6H-SiC substrates or compared. Self-seeding produces crystals of the highest perfection, lowest stress, and low Si and C impurity content, but the crystals grow in random crystallographic orientations. Crystals grown in boron nitride crucibles typically form thin platelets with the fastest growth occurring in the c-axis direction. Growth striations run the length of the crystals in the c-axis direction. Anisotropic etching in aqueous 45 wt% KOH solutions shows that the growth (0 0 0 1) planes exposed to the AlN source predominately have an aluminum polarity. AlN crystals seeded on 6H-SiC(0 0 0 1) have a single crystallographic orientation and the largest dimensions are perpendicular to the c-axis, determined by the size of the substrate. Cracking and voids in the AlN layer produced by differences in thermal expansion coefficients of AlN and SiC and decomposition of the SiC were ameliorated by depositing an AlN-SiC alloy layer on the SiC before growing the AlN layer. Raman spectroscopy measurements suggest the AlN and AlN-SiC alloy layer are both under tensile stress. The defect density in AlN crystals grown on composite AlN-SiC/6H-SiC substrates was 3.7×10 5 cm -2, as determined by synchrotron white beam X-ray topography.

  1. Crystallization of amorphous Si film by microwave annealing with SiC susceptors

    NASA Astrophysics Data System (ADS)

    Fong, S. C.; Wang, C. Y.; Chang, T. H.; Chin, T. S.

    2009-03-01

    Crystalline silicon film is extremely important for low-cost, high performance Si-based devices, such as thin film transistors and solar cells. This study employs an elliptical microwave applicator to process the material placing near the field maximum. It is demonstrated that microwave irradiation incorporating with SiC susceptors is able to crystallize amorphous silicon film on glass substrate at a low temperature below 600 °C in a short period of 600 s. The reasons for such a fast processing time and a low annealing temperature are not clear.

  2. Magnetic order and crystal structure study of YNi{sub 4}Si-type NdNi{sub 4}Si

    SciTech Connect

    Yao, Jinlei; Isnard, O.; Morozkin, A.V.; Ivanova, T.I.; Koshkid'ko, Yu.S.; Bogdanov, A.E.; Nikitin, S.A.; Suski, W.

    2015-02-15

    Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi{sub 4}Si-type (space group Cmmm) NdNi{sub 4}Si compound are presented. The magnetocaloric effect of NdNi{sub 4}Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of –3.3 J/kg K for a field change of 50 kOe near T{sub C}=12 K. Below ∼12 K, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μ{sub B}. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu{sub 5}-type compound. - Graphical abstract: The NdNi{sub 4}Si supplement the series of the orthorhombic derivative of the CaCu{sub 5}-type, namely the YNi{sub 4}Si-type, RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho). Below ∼12 K in a zero applied magnetic field, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group. Compared to the CaCu{sub 5}-type NdNi{sub 4}Si compound, the YNi{sub 4}Si-type counterpart has the relatively high ferromagnetic ordering temperature (9.2 K vs. 12 K), the small magnetocaloric effect (–7.3 J/kg K vs. –3.3 J/kg K for ∆H=50 kOe), and the large magnetic anisotropy at low temperatures. In contrast with CaCu{sub 5}-type NdNi{sub 4}Si, YNi{sub 4}Si-type NdNi{sub 4}Si shows distinct hysteresis loop at 2 K.We suggest that orthorhombic distortion may be used as a prospective route for optimization of permanent magnetic properties in the family of CaCu{sub 5}-type rare earth materials. - Highlights: • Below ∼12 K the YNi{sub 4}Si-type NdNi{sub 4}Si shows a ferromagnetic ordering. • MCE of NdNi{sub 4}Si reaches value of –3.3 J/kg K in 0–50 kOe near Curie point. • NdNi{sub 4}Si exhibits b-axis ferromagnetic order with the Cmm′m magnetic space

  3. Si-O Bonded Interactions in Silicate Crystals and Molecules: A Comparison

    SciTech Connect

    Gibbs, Gerald V.; Jayatilaka, Dylan; Spackman, M. A.; Cox, David F.; Rosso, Kevin M.

    2006-11-16

    Bond critical point, local kinetic energy density, G(rc), and local potential energy density, V(rc), properties of the electron density distributions, ρ(r), calculated for silicates like quartz and molecules like disiloxane are similar, indicating that the forces that govern the Si-O bonded interactions in crystals are short-ranged and molecular-like. Using the G(rc)/ρ(rc) ratio as a measure of bond character, the ratio increases as the Si-O bond length, the local electronic energy density, H(rc) = G(rc) + V(rc), and the oordination number of the Si atom decrease, and as the value of the electron density at the bond critical point, ρ(rc) and the Laplacian, ∇2ρ(rc), increase. The G(rc)/ρ(rc) and H(rc)/ρ(rc) ratios categorize the bond as observed for other second row atom M-O bonds into nonequivalent classes with the covalent character of each of the M-O bonds increasing with the H(rc)/ρ(rc) ratio. Some workers consider the Si-O bond to be highly ionic and others considered it to be either intermediate or substantially covalent. The character of the bond is examined in terms of the large net atomic basin charges conferred on the Si atoms comprising disiloxane, stishovite, quartz and forsterite, the domains of localized electron density along the Si-O bond vectors and on the reflex side of the Si-O-Si angle together with the close similarity of the Si-O bonded interactions observed for a variety of hydroxyacid silicate molecules and a large number of silicate crystals. The bond critical point and local energy density properties of the electron density distribution indicate that the bond is intermediate in character between Al-O and P-O bonded interations rather than being ionic or covalent.

  4. Polarized spectroscopic properties of Er3+:Gd2SiO5 crystal and evaluation of Er3+:Yb3+:Gd2SiO5 crystal as a 1.55 μm laser medium

    NASA Astrophysics Data System (ADS)

    Wang, H.; Huang, J. H.; Gong, X. H.; Chen, Y. J.; Lin, Y. F.; Luo, Z. D.; Huang, Y. D.

    2016-10-01

    An Er3+-doped Gd2SiO5 single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd-Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er3+-Yb3+ co-doped Gd2SiO5 crystal was evaluated.

  5. Crystal structure of laser-induced subsurface modifications in Si

    DOE PAGES

    Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in ’t Veld, A. J.

    2015-06-04

    Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystalmore » structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.« less

  6. Measurement of thermal boundary conductance at sintered Si-Si interface

    NASA Astrophysics Data System (ADS)

    Sakata, Masanori; Hori, Takuma; Oyake, Takafumi; Maire, Jeremie; Nomura, Masahiro; Shiomi, Junichiro

    2015-03-01

    Performance of thermoelectric materials is enhanced by reducing thermal conductivity (TC) without appreciably decreasing electrical properties. Recently, nanocrystalline formed by compaction of nanopowder by sintering has been shown to be a promising solution for low TC and high scalability However, little is known about the thermal boundary conductance (TBC) of the grain boundaries, which dominantly affect the TC, because of the difficulty to directly measure the TBC of the local boundaries. We have therefore developed a process to fabricate a highly planer and uniform bonded-interface between Si thin film and Si substrate, which is suitable for measuring the TBC of the interfaces with time-domain thermoreflectance method. We have found that sintering temperature and HF removal of native oxide on the wafers can change the interface structures from uniform to local SiOx structures, which alter the TBC from 0.1 to 1 GWm-2K-1 order. Moreover, crystal orientation mismatch can change the TBC by several times. Together with theoretical calculation that relates the TBC and TC of nanocrystalline Si, the measurement results identify the route to reduce the TC less than the state-of-art value. This research is partially supported by KAKENHI 2679009.

  7. Simultaneous presence of (Si3O10)8- and (Si2O7)6- groups in new synthetic mixed sorosilicates: BaY4(Si2O7)(Si3O10) and isotypic compounds, studied by single-crystal X-ray diffraction, Raman spectroscopy and DFT calculations

    NASA Astrophysics Data System (ADS)

    Wierzbicka-Wieczorek, Maria; Többens, Daniel M.; Kolitsch, Uwe; Tillmanns, Ekkehart

    2013-11-01

    Three new, isotypic silicate compounds, BaY4(Si2O7)(Si3O10), SrYb4(Si2O7)(Si3O10) and SrSc4(Si2O7)(Si3O10), were synthesized using high-temperature flux growth techniques, and their crystal structures were solved from single-crystal X-ray intensity data: monoclinic, P21/m, with a=5.532(1)/5.469(1)/5.278(1), b=19.734(4)/19.447(4)/19.221(4), c=6.868(1)/6.785(1)/6.562(1) Å, β=106.53(3)/106.20(3)/106.50(3)°, V=718.8(2)/693.0(2)/638.3(2) Å3, R(F)=0.0225/0.0204/0.0270, respectively. The topology of the novel structure type contains isolated horseshoe-shaped Si3O10 groups (Si-Si-Si=93.15-95.98°), Si2O7 groups (Si-Obridge-Si=180°, symmetry-restricted) and edge-sharing M(1)O6 and M(2)O6 octahedra. Single-crystal Raman spectra of the title compounds were measured and compared with Raman spectroscopic data of chemically and topologically related disilicates and trisilicates, including BaY2(Si3O10) and SrY2(Si3O10). The band assignments are supported by additional theoretical calculation of Raman vibrations by DFT methods.

  8. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

    NASA Astrophysics Data System (ADS)

    Taboada, A. G.; MeduÅa, M.; Salvalaglio, M.; Isa, F.; Kreiliger, T.; Falub, C. V.; Barthazy Meier, E.; Müller, E.; Miglio, L.; Isella, G.; von Känel, H.

    2016-02-01

    Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

  9. Orientational bonding of phases accompanying directed crystallization of the eutectic of the system Si-TiSi2

    NASA Astrophysics Data System (ADS)

    Derevyagina, L. S.; Butkevich, L. M.

    1987-09-01

    The characteristic features of structure formation in cast and direct crystallized alloys of the system Si-TiSi2 were studied. It is shown that the predominant orientation of the bonding of the phases in directionally crystallized eutectics (DE) of the system Si-TiSi2, observed at the stage of steady-state growth, already appears on the surface of nucleation, which apparently indicates that the nucleation of the phases in the alloys of this system is of an epitaxial character.

  10. Study of hydrogen states in a-Si:H films, dehydrogenization treatments and influence of hydrogen on nanosecond pulse laser crystallization of a-Si:H

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Galkov, M. S.; Safronova, N. A.; Kamaev, G. N.; Antonenko, A. H.; Kochubey, S. A.

    2014-12-01

    Structures based on hydrogenated amorphous silicon (a-Si:H) films deposited on various substrates (including not refractory ones) are widely applied in giant microelectronics devices, such as flat panel displays based on active matrix thin-film transistors and solar cells. The a-Si:H films produced by plasma enhanced chemical vapor deposition (PECVD) methods, contain up to 40% atoms of hydrogen. The influence of hydrogen on the optical and electrical properties of the films and their degradation is important. Therefore, the development of express and non-destructive methods for control of the hydrogen concentration in thin films continues to be an actual task to date. Previously, from a comparative analysis of infrared (IR) spectroscopy and Raman scattering spectroscopy, the ratios of the integral intensities of Raman peaks due to scattering by vibrations of the Si-H and Si-H2 bonds to the intensity of Raman peak of the Si-Si bonds were experimentally determined. Knowing these ratios, it is possible to measure the hydrogen concentration, moreover, separately in Si-H and Si-H2 states. Proposed quantitative method for determining of the hydrogen concentration from analysis of the Raman spectra is an express, non-destructive method and can be used for "in situ" monitoring of the hydrogen. The aim of this work was to determine the polarization dependence of Raman scattering by stretching vibrations of Si-H bonds and find the form of the corresponding Raman tensors. From analysis of Raman intensities in different polarizations the Raman tensors for Si-H and Si-H2 bonds were determined. The regimes for dehydrogenization of thick (up to 1 micron) a-Si:H films were found. The nanosecond pulse XeCl laser with wavelength of 308 nm and pulse duration of 10 ns was used for pulse crystallization of as-deposited and dehydrogenated films. As it was studied earlier, for a-Si:H films with high hydrogen concentration, the threshold for crystallization is very close to threshold of

  11. Exotic (anti)ferrogmagnetism in Single Crystals of Pr6ni2Si3

    SciTech Connect

    Y. Janssen; K.W. Dennis; R. Prozorov; P.C. Canfield; R.W. McCallum

    2008-06-04

    The ternary intermetallic compound, Pr{sub 6}Ni{sub 2}Si{sub 3}, is a member of a structure series of compounds based on a triangular structure where the number of Pr atoms in the prism cross section can be systematically varied. Pr{sub 6}Ni{sub 2}Si{sub 3} contains two distinct Pr lattice sites which result in complex interactions between the magnetic ions. Extensive measurements of specific heat and magnetization on single-crystal samples indicate that Pr{sub 6}Ni{sub 2}Si{sub 3} orders with both a ferromagnet and an antiferromagnet component, with ordering temperatures of 39.6 and {approx}32 K, respectively. The ferromagnetic component c axis is accompanied by a large hysteresis, and the antiferromagnetic component c axis is accompanied by a spin-flop-type transition. More detailed measurements, of the vector magnetization, indicate that the ferromagnetic and the antiferromagnetic order appear independent of each other. These results not only clarify the behavior of Pr{sub 6}Ni{sub 2}Si{sub 3} itself but also of the other members of the structure series, Pr{sub 5}Ni{sub 2}Si{sub 3} and Pr{sub 15}Ni{sub 7}Si{sub 10}.

  12. Charge transfer of single laser crystallized intrinsic and phosphorus-doped Si-nanocrystals visualized by Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Xu, Jie; Xu, Jun; Lu, Peng; Shan, Dan; Li, Wei; Chen, Kunji

    2014-10-01

    Isolated intrinsic and phosphorus doped (P-doped) Si-nanocrystals (Si-NCs) on n- and p-Si substrates are fabricated by excimer laser crystallization techniques. The formation of Si-NCs is confirmed by atomic force microscopy (AFM) and conductive AFM measurements. Kelvin probe force microscopy (KPFM) is then carried out to visualize the trapped charges in a single Si-NC dot which derives from the charge transfer between Si-NCs and Si substrates due to their different Fermi levels. The laser crystallized P-doped Si-NCs have a similar Fermi level around the mid-gap to the intrinsic counterparts, which might be caused by the inactivated impurity atoms or the surface states-related Fermi level pinning. A clear rise of the Fermi level in P-doped Si-NCs is observed after a short time thermal annealing treatment, indicating the activation of dopants in Si-NCs. Moreover, the surface charge quantity can be estimated using a simple parallel plate capacitor model for a quantitative understanding of the KPFM results at the nanoscale.

  13. Charge transfer of single laser crystallized intrinsic and phosphorus-doped Si-nanocrystals visualized by Kelvin probe force microscopy

    SciTech Connect

    Xu, Jie; Xu, Jun Lu, Peng; Shan, Dan; Li, Wei; Chen, Kunji

    2014-10-07

    Isolated intrinsic and phosphorus doped (P-doped) Si-nanocrystals (Si-NCs) on n- and p-Si substrates are fabricated by excimer laser crystallization techniques. The formation of Si-NCs is confirmed by atomic force microscopy (AFM) and conductive AFM measurements. Kelvin probe force microscopy (KPFM) is then carried out to visualize the trapped charges in a single Si-NC dot which derives from the charge transfer between Si-NCs and Si substrates due to their different Fermi levels. The laser crystallized P-doped Si-NCs have a similar Fermi level around the mid-gap to the intrinsic counterparts, which might be caused by the inactivated impurity atoms or the surface states-related Fermi level pinning. A clear rise of the Fermi level in P-doped Si-NCs is observed after a short time thermal annealing treatment, indicating the activation of dopants in Si-NCs. Moreover, the surface charge quantity can be estimated using a simple parallel plate capacitor model for a quantitative understanding of the KPFM results at the nanoscale.

  14. The closo-Si12C12 molecule from cluster to crystal: A theoretical prediction.

    PubMed

    Duan, Xiaofeng F; Burggraf, Larry W

    2016-03-21

    The structure of closo-Si12C12 is unique among stable SinCm isomers (n, m > 4) because of its high symmetry, π-π stacking of C6 rings and unsaturated silicon atoms at symmetrical peripheral positions. Dimerization potential surfaces reveal various dimerization reactions that form between two closo-Si12C12 molecules through Si-Si bonds at unsaturated Si atoms. As a result the closo-Si12C12 molecule is capable of polymerization to form stable 1D polymer chains, 2D crystal layers, and 3D crystals. 2D crystal structures formed by side-side polymerization satisfy eight Si valences on each monomer without large distortion of the monomer structure. 3D crystals are formed by stacking 2D structures in the Z direction, preserving registry of C6 rings in monomer moiety. PMID:27004878

  15. The closo-Si12C12 molecule from cluster to crystal: A theoretical prediction

    NASA Astrophysics Data System (ADS)

    Duan, Xiaofeng F.; Burggraf, Larry W.

    2016-03-01

    The structure of closo-Si12C12 is unique among stable SinCm isomers (n, m > 4) because of its high symmetry, π-π stacking of C6 rings and unsaturated silicon atoms at symmetrical peripheral positions. Dimerization potential surfaces reveal various dimerization reactions that form between two closo-Si12C12 molecules through Si-Si bonds at unsaturated Si atoms. As a result the closo-Si12C12 molecule is capable of polymerization to form stable 1D polymer chains, 2D crystal layers, and 3D crystals. 2D crystal structures formed by side-side polymerization satisfy eight Si valences on each monomer without large distortion of the monomer structure. 3D crystals are formed by stacking 2D structures in the Z direction, preserving registry of C6 rings in monomer moiety.

  16. Investigation of single crystal zircon, (Zr,Pu)SiO4 doped with Pu

    NASA Astrophysics Data System (ADS)

    Hanchar, J. M.; Burakov, B. E.; Anderson, E. B.; Zamoryanskaya, M. V.

    2003-04-01

    Zircon-based ceramics are under consideration as durable waste forms for immobilization of weapons grade plutonium and other actinide elements. Samples of polycrystalline zircon doped with 238Pu and 239Pu have been obtained in previous studies. These materials, however, are difficult to use for precise measurement of the leach-rate of Pu, and to accurately determine the level of Pu doping that can be attained in zircon, (Zr,Pu)SiO_4. Single crystals of 238Pu doped zircon (ranging from 0.3 to 3.5 mm in size) were successfully grown for the first time ever using a Li-Mo flux synthesis method. The incorporation of Pu ranged from 1.9 to 4.7 wt. % el. (with approximately 81 wt.% of 238Pu isotope) based on electron microprobe analysis. The zircon crystals were pinkish-brown when they were crystallized, and then over a period of five months changed to a brown color. After fourteen months the crystals turned to a brown-gray color. The zircon crystals glow in the dark probably from alpha particle induced luminescence. The intensity of the cathodoluminescence (CL) emission in the Pu doped crystals is correlated with the Pu content, and the CL emission showed no change 141 days after the initial CL measurements were made. Single crystal X-ray diffraction results obtained 141 days after synthesis indicate unit cell parameters (in angstroms): a = 6.6267(15), c = 5.9992(10) and a cell volume of 263.41(10). When the zircon crystals were grown, they were free of cracks. Over the course of five months cracks appeared throughout the crystals, and after fourteen months the cracks became much more abundant. The zircon crystals were transparent upon crystallization, and even with numerous cracks throughout the crystals remain transparent. Radiation damage calculations indicate that after only a short period of time, six months, these zircon crystals had already accumulated significant alpha-induced radiation damage (˜2.5 x1014 alpha-decay events per milligram). After five years they

  17. Kinetics of Isothermal Melt Crystallization in CaO-SiO2-CaF2-Based Mold Fluxes

    NASA Astrophysics Data System (ADS)

    Seo, Myung-Duk; Shi, Cheng-Bin; Baek, Ji-Yeon; Cho, Jung-Wook; Kim, Seon-Hyo

    2015-10-01

    A kinetic study for isothermal melt crystallization of CaO-SiO2-CaF2-based mold fluxes with different basicity of 0.94 and 1.34 has been carried out systematically by DSC measurements. The kinetic parameters were determined by Johnson-Mehl-Avrami equation. The average Avrami exponent of cuspidine (3CaO·2SiO2·CaF2) crystallization for mold flux of lower basicity (0.94) is calculated to be 3.1, implying that the crystallization mode is instantaneous nucleation followed by 3-dimensional growth. For the mold flux of higher basicity (1.34), the average Avrami exponent of cuspidine equals to 3.4, strongly suggesting that the growth is still 3 dimensional but the nucleation should be continuous. It was found that the effective crystallization rate constant for both mold fluxes increases as the crystallization temperature decreases, showing that the crystallization rate could be governed by nucleation rate. The negative effective activation energy indicates an anti-Arrhenius behavior for crystallization of the mold fluxes studied. Therefore, it is concluded that the melt crystallization for the commercial mold fluxes will be determined by thermodynamics of nucleation which is relevant to degree of undercooling. The morphology of cuspidine crystals observed by SEM agreeds well with the isothermal crystallization kinetics results.

  18. Electroactive complex in thermally treated Ge-Si crystals

    SciTech Connect

    Azhdarov, G. Kh.; Zeynalov, Z. M.; Zakhrabekova, Z. M.; Kyazimova, A. I.

    2010-05-15

    It is shown by Hall measurements that quenching complexly doped Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.20) crystals from 1050-1080 K leads to the formation of additional electroactive acceptor centers in them. The activation energy of these centers increases linearly with an increase in the silicon content in the crystal and is described by the relation E{sub k}{sup x} = (52 + 320x) meV. Annealing these crystals at 550-570 K removes the additional acceptor levels. It is established that the most likely model for the additional electroactive centers is a pair composed of substituent copper and aluminum atoms (Cu{sub s}Al{sub s}) or interstitial copper and substituent aluminum atoms (Cu{sub i}Al{sub s}). It is shown that the generation of additional deep acceptor levels must be taken into account when using the method of precise doping of Ge{sub 1-x}Si{sub x} crystals with copper.

  19. Deflection of 32.8 TeV/c fully stripped Pb ions by means of a bent Si crystal

    NASA Astrophysics Data System (ADS)

    Biino, C.; Clément, M.; Doble, N.; Elsener, K.; Gatignon, L.; Grafström, P.; Herr, W.; Keppler, P.; Major, J.; Mikkelsen, U.; Taratin, A.; Velasco, M.

    2000-03-01

    New results on the deflection of fully stripped 32.8 TeV/c Pb ions in a bent Si crystal at the CERN-SPS are reported. Deflection efficiencies above 10% have been measured for deflection angles in the range 4-9 mrad. The effect of particle losses due to interaction in the crystal and other systematic errors have been carefully investigated. The experimental results are in agreement with theoretical calculations.

  20. Electron microscopy study of Ni induced crystallization in amorphous Si thin films

    SciTech Connect

    Radnóczi, G. Z.; Battistig, G.; Pécz, B.; Dodony, E.; Vouroutzis, N.; Stoemenos, J.; Frangis, N.; Kovács, A.

    2015-02-17

    The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.

  1. Single crystal growth of type I Na-Si clathrate by using Na-Sn flux

    NASA Astrophysics Data System (ADS)

    Morito, Haruhiko; Shimoda, Masashi; Yamane, Hisanori

    2016-09-01

    Single crystals of type I Na-Si clathrate, Na8Si46, were synthesized by heating Na, Na4Si4, and Na15Sn4 at 723 K under an Ar gas pressure of 104 Pa for 12 h. The single crystals having {110} habit planes grew up to 1.5 mm in size due to Na evaporation from a Na-Si-Sn melt with a starting compositional molar ratio of Na/Si/Sn=5.75:2:1.

  2. Anisotropic magnetic properties and giant magnetocaloric effect of single-crystal PrSi

    NASA Astrophysics Data System (ADS)

    Das, Pranab Kumar; Bhattacharyya, Amitava; Kulkarni, Ruta; Dhar, S. K.; Thamizhavel, A.

    2014-04-01

    A single crystal of PrSi was grown by the Czochralski method in a tetra-arc furnace. Powder x-ray diffraction of the as-grown crystal revealed that PrSi crystallizes in an FeB-type structure with space group Pnma (No. 62). The anisotropic magnetic properties were investigated by means of magnetic susceptibility, isothermal magnetization, electrical transport, and heat capacity measurements. Magnetic susceptibility data clearly indicate the ferromagnetic transition in PrSi with a TC of 52 K. The relative easy axis of magnetization was found to be the [010] direction. Heat capacity data confirm the bulk nature of the transition at 52 K and exhibit a huge anomaly at the transition. A sharp rise in the low-temperature heat capacity has been observed (below 5 K) which is attributed to the 141Pr nuclear Schottky heat capacity arising from the hyperfine field of the Pr moment. The estimated Pr magnetic moment 2.88 μB/Pr from the hyperfine splitting is in agreement with the saturation magnetization value obtained from the magnetization data measured at 2 K. From the crystal electric field analysis of the magnetic susceptibility, magnetization, and heat capacity data it is found that the degenerate J =4 Hund's rule derived state of the Pr3+ ion splits into nine singlets with an overall splitting of 284 K, the first excited singlet state separated by just 9 K from the ground state. The magnetic ordering in PrGe appears to be due to the exchange-generated admixture of low-lying crystal field levels. The magnetocaloric effect (MCE) has been investigated from magnetization data along all three principal crystallographic directions. The large magnetic entropy change, -ΔSM=22.2 J/kg K, and the relative cooling power, RCP = 460 J/kg, characteristic of the giant magnetocaloric effect are achieved near the transition temperature (TC = 52 K) for H = 70 kOe along [010]. Furthermore, the PrSi single crystal exhibits a giant MCE anisotropy.

  3. Electronic and crystal structure of α- and β-CeIr 2Si 2

    NASA Astrophysics Data System (ADS)

    Mihalik, M.; Diviš, M.; Sechovský, V.

    2009-10-01

    We present the results of XRD, magnetization, resistivity and specific heat measurements of CeIr 2Si 2 single crystals for both, the low-temperature α-phase and the high-temperature β-phase, respectively. The α-phase adopts the tetragonal ThCr 2Si 2-type whereas the β-phase forms in the CaBe 2Ge 2-type structure. Both the phases remain paramagnetic down to low temperatures, nevertheless both, the magnetization and resistivity exhibit pronounced anisotropy in the whole temperature range of measurements (2-300 K). Results of fitting the temperature dependence of the susceptibility within the interconfiguration-fluctuation model point to the Ce valence fluctuating between 3+ and 4+. The α-phase behaves as a Fermi-liquid (FL) at low temperatures whereas the β-phase exhibits non-Fermi-liquid (NFL) features. The results are discussed in context of other similar polymorphic compounds.

  4. Synthesis and crystal growth of Mg2Si by the liquid encapsulated vertical gradient freezing method

    NASA Astrophysics Data System (ADS)

    Nakagawa, Reo; Katsumata, Hiroshi; Hashimoto, Satoshi; Sakuragi, Shiro

    2015-08-01

    The synthesis of Mg2Si bulk crystals was performed by the vertical gradient freezing method using a KCl-MgCl2 eutectic liquid encapsulant. Stoichiometric polycrystalline Mg2Si bulk crystals were successfully grown by changing the composition ratio of starting Mg and Si powders (Mg/Si) from 2.0 to 3.5. A chemical reaction between Mg2Si and the crucible materials was inhibited using encapsulant materials, and the contamination by K or Cl originating from the encapsulant materials was not detected in almost all the samples. However, Mg evaporation could not be prevented completely during the synthesis and crystal growth. The optical band-gap energy of Mg2Si bulk crystals became minimal (0.79 eV) at a Mg/Si ratio of 2.5, at which the maximum electron mobility of 202 cm2·V-1·s-1 was obtained. These results indicate that the composition ratio of Mg/Si = 2.5 for starting Mg and Si powders was optimal for synthesizing Mg2Si bulk crystals with high crystalline quality.

  5. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

    SciTech Connect

    Gu, Zheng; Du, L; Edgar, James H.; Payzant, Edward A.; Walker, L. R.; Liu, R.; Engelhard, Mark H.

    2005-12-20

    AlN-SiC alloy crystals, with a thickness greater than 500 m, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8? or 3.68?) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlN-SiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 106 cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

  6. Truncated tetrahedron seed crystals initiating stereoaligned growth of FeSi nanowires.

    PubMed

    Kim, Si-in; Yoon, Hana; Seo, Kwanyong; Yoo, Youngdong; Lee, Sungyul; Kim, Bongsoo

    2012-10-23

    We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an m-Al(2)O(3) substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth is initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs via seed crystals could be employed to heteroepitaxial growth of other compound NWs.

  7. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

    SciTech Connect

    Gu, Z; Du, Li; Edgar, J H; Payzant, E Andrew; Walker, Larry R; Liu, R; Engelhard, M H

    2005-01-01

    AlN-SiC alloy crystals, with a thickness greater than 500μm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8 or 3.68 ) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlNSiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). Xray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 10^6cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

  8. Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions.

    PubMed

    Amato, Michele; Kaewmaraya, Thanayut; Zobelli, Alberto; Palummo, Maurizia; Rurali, Riccardo

    2016-09-14

    Recent experimental investigations have confirmed the possibility to synthesize and exploit polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles methods based on density functional theory and many-body perturbation theory to investigate the electronic and optical properties of hexagonal-diamond and cubic-diamond Si NWs as well as their homojunctions. We show that hexagonal-diamond NWs are characterized by a more pronounced quantum confinement effect than cubic-diamond NWs. Furthermore, they absorb more light in the visible region with respect to cubic-diamond ones and, for most of the studied diameters, they are direct band gap materials. The study of the homojunctions reveals that the diameter has a crucial effect on the band alignment at the interface. In particular, at small diameters the band-offset is type-I whereas at experimentally relevant sizes the offset turns up to be of type-II. These findings highlight intriguing possibilities to modulate electron and hole separations as well as electronic and optical properties by simply modifying the crystal phase and the size of the junction. PMID:27530077

  9. Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions.

    PubMed

    Amato, Michele; Kaewmaraya, Thanayut; Zobelli, Alberto; Palummo, Maurizia; Rurali, Riccardo

    2016-09-14

    Recent experimental investigations have confirmed the possibility to synthesize and exploit polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles methods based on density functional theory and many-body perturbation theory to investigate the electronic and optical properties of hexagonal-diamond and cubic-diamond Si NWs as well as their homojunctions. We show that hexagonal-diamond NWs are characterized by a more pronounced quantum confinement effect than cubic-diamond NWs. Furthermore, they absorb more light in the visible region with respect to cubic-diamond ones and, for most of the studied diameters, they are direct band gap materials. The study of the homojunctions reveals that the diameter has a crucial effect on the band alignment at the interface. In particular, at small diameters the band-offset is type-I whereas at experimentally relevant sizes the offset turns up to be of type-II. These findings highlight intriguing possibilities to modulate electron and hole separations as well as electronic and optical properties by simply modifying the crystal phase and the size of the junction.

  10. Plastically deformed region around indentations on Si angle crystal

    NASA Astrophysics Data System (ADS)

    Yoshioka, M.

    1994-12-01

    Expansion of a hemispherical shell by inner pressure has been widely applied for the model of the deformation by an indentation on a flat surface; however, the deformed region is not necessarily spherically symmetric, especially in anisotropic materials such as single crystals. Therefore, whether the spherical model is applicable in an indentation process for objective materials must always be kept in mind. Indentations have been made on the (111) surface of silicon crystal at various temperatures. The three-dimensional shape of the plastically deformed region was experimentally measured by means of an etching technique and its difference from the hemisphere was observed. It was never spherical but much more complicated, similar to a bottle gourd. The slip mechanism, which resulted in the observed shape of the plastic region, is discussed further. The plastic region was analytically obtained also on the assumption that the stress distribution was spherically symmetrical. The result is approximately in accordance with the observed shape. It is therefore concluded that the stress distribution is nearly spherical although the plastic region is far from it. The yield strength of silicon crystals and their temperature dependence were obtained based on the spherical model.

  11. Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate

    NASA Astrophysics Data System (ADS)

    Kimura, M.; Egami, K.; Kanamori, M.; Hamaguchi, T.

    1983-08-01

    Epitaxial film transfer, a new technique for producing a single crystal Si film with both large size and high quality on an insulating substrate, is demonstrated. The technique in which an epitaxial Si film is transferred to a secondary substrate by using three fundamental processes of epitaxial growth, bonding of two wafers, and substrate elimination, can produce a 2-in. single crystal Si film as thin as 1.5 μm on a insulating substrate. Thickness variation can be controlled to ±0.06 μm across a 2-in. wafer. An epitaxial Si film is transferred without significant degradation in quality although a fine film waving exists.

  12. Formation of buried epitaxial Si-Ge alloy layers in Si<100>crystal by high dose Ge ion implantation

    SciTech Connect

    Yu, Kin Man; Brown, I.G.; Im, S.

    1991-11-01

    We have synthesized single crystal Si{sub 1-x}Ge{sub x} alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 1000 keV and with doses ranging from 1{times}10{sup 16} to 7{times}10{sup 16} ions/cm{sup 2} were implanted into Si <100> crystals at room temperature, resulting in the formation of Si{sub 1-x}Ge{sub x} alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers were initiated by thermal annealing at temperatures higher than 500{degrees}C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si{sub 1-x}Ge{sub x} layers with full width at half maximum {approximately}100nm were formed under a {approximately}30nm Si layer after annealing at 600{degrees}C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900{degrees}C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

  13. Fabrication of single-crystal Si nanowires by ultrahigh vacuum magnetron sputtering.

    NASA Astrophysics Data System (ADS)

    Knepper, J. W.; Zhao, X. W.; Yang, F. Y.

    2006-03-01

    Semiconductor nanowires have attracted great interests due to the intriguing fundamental science and technological application they provide. Many semiconductor materials have been made into single crystal nanowires with superior crystal quality and high mobility. Among them, silicon is particularly interesting because silicon is the foundation of modern electronic technology. A majority of the nanowire synthesis used laser-assisted catalyst growth or chemical vapor deposition. Here we reported a different approach to the fabrication of semiconductor nanowires using ultrahigh vacuum magnetron sputtering. Using thin Au layers as catalyst via vopor-liquid-solid mechanism, single crystal Si nanowires have been grown on Si substrates at a temperature of ˜700 C. Electron microscopy revealed that most Si nanowires grew epitaxially on Si(111) surfaces. Si nanowires are perpendicular to the Si(111) surface with a Si/Au alloy sphere on the top of the nanowires. The growth of Si nanowires on Si wafers with other orientations and amorphous silicon oxide layers was also observed, but with much less probability. The diameter of the Si nanowires is about 200 nm using Au layers as catalyst. The nanowire diameter can be controlled to smaller size by patterning the Au layers into small dots to reduce the catalyst size. Si nanowires fabricated by ultrahigh vacuum sputter at a base pressure of 10̂-10 torr are high purity and can be easily doped to desirable carrier concentration.

  14. Precipitates of MnSi cubic phase in tetragonal Mn{sub 4}Si{sub 7} crystal

    SciTech Connect

    Suvorova, E. I. Klechkovskaya, V. V.

    2013-11-15

    Higher manganese silicides (HMSs) exhibit interesting thermoelectric and optoelectronic properties. Development of HMS-based thermoelements and microthermopiles of different designs may meet a number of problems, which can be solved only when the real structure of crystals and thin layers on which they are based is established. We have applied scanning and transmission electron microscopy and electron diffraction to investigate HMS crystals of two types: single crystals grown from melt by the Bridgman method and microislands formed by reactive diffusion during manganese vapor deposition on silicon substrates. The exact phase composition of these materials is established: matrix HMS crystal belonging to tetragonal system (Mn{sub 4}Si{sub 7} composition) and precipitates of cubic manganese monosilicide MnSi. The shape and sizes of precipitates are determined, the crystallographic relationships between the tetragonal and cubic phases are found, and the interface is investigated.

  15. Measuring Light Reflectance of BGO Crystal Surfaces

    SciTech Connect

    Janecek, Martin; Moses, William

    2008-07-28

    A scintillating crystal's surface reflectance has to be well understood in order to accurately predict and optimize the crystal?s light collection through Monte Carlo simulations. In this paper, we measure the inner surface reflectance properties for BGO. The measurements include BGO crystals with a mechanically polished surface, rough-cut surface, and chemically etched surface, and with various reflectors attached, both air- coupled and with coupling compound. The measurements are performed with a laser aimed at the center of a hemispherical shaped BGO crystal. The hemispherical shape eliminates any non-perpendicular angles for light entering and exiting the crystal. The reflected light is collected with an array of photodiodes. The laser can be set at an arbitrary angle, and the photodiode array is rotated to fully cover 2? of solid angle. The current produced in the photodiodes is readout with a digital multimeter connected through a multiplexer. The two rows of photodiodes achieve 5-degree by 4-degree resolution, and the current measurement has a dynamic range of 10^5:1. The acquired data was not described by the commonly assumed linear combination of specular and diffuse (Lambertian) distributions, except for a very few surfaces. Surface roughness proved to be the most important parameter when choosing crystal setup. The reflector choice was of less importance and of almost no consequence for rough-cut surfaces. Pure specular reflection distribution for all incidence angles was measured for polished surfaces with VM2000 film, while the most Lambertian distribution for any surface finish was measured for titanium dioxide paint. The distributions acquired in this paper will be used to create more accurate Monte Carlo models for light reflection distribution within BGO crystals.

  16. Glass formation and crystallization in high-temperature glass-ceramics and Si3N4

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III

    1991-01-01

    The softening of glassy grain boundaries in ceramic matrix composites and Si3N4 at high temperatures reduces mechanical strength and the upper-use temperature. By crystallizing this glass to a more refractory crystalline phase, a material which performs at higher temperatures may result. Three systems were examined: a cordierite composition with ZrO2 as a nucleating agent; celsian compositions; and yttrium silicate glasses both in bulk and intergranular in Si3N4. For the cordierite compositions, a series of metastable phases was obtained. The crystallization of these compositions was summarized in terms of metastable ternary isothermal sections. Zircon formed at the expense of ZrO2 and spinel. In SiC composites, the transformations were slower. In celsian, two polymorphs were crystallized. One phase, hexacelsian, which always crystallized, even when metastable, had an undesirable volume change. The other phase, celsian, was very difficult to crystallize. In yttrium silicate bulk glasses, similar in composition to the intergranular glass in Si3N4, a number of polymorphs of Y2Si2O7 were crystallized. The conditions under which these polymorphs formed are compared with crystallization in Si3N4.

  17. Process facilitates photoresist mask alignment on SiC crystals

    NASA Technical Reports Server (NTRS)

    Formigoni, N. P.; Roberts, J. S.

    1967-01-01

    Growth of silicon dioxide on a silicon carbide crystal ensures proper orientation of photoresist masks on the crystals used for semiconductor devices. The crystal is heated in a water vapor-saturated gas to delineate p-n junctions that intersect the crystal surface.

  18. Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

    NASA Astrophysics Data System (ADS)

    Preidel, V.; Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C.

    2015-06-01

    Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

  19. Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

    SciTech Connect

    Preidel, V. Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C.

    2015-06-14

    Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

  20. Measuring Curved Crystal Performance for a High Resolution, Imaging X-ray Spectrometer

    SciTech Connect

    Michael Haugh and Richard Stewart

    2010-06-07

    This paper describes the design, crystal selection, and crystal testing for a vertical Johann spectrometer operating in the 13 keV range to measure ion Doppler broadening in inertial confinement plasmas. The spectrometer is designed to use thin, curved, mica crystals to achieve a resolving power of E/ΔE>2000. A number of natural mica crystals were screened for flatness and X-ray diffraction width to find samples of sufficient perfection for use in the instrument. Procedures to select and mount high quality mica samples are discussed. A diode-type X-ray source coupled to a dual goniometer arrangement was used to measure the crystal reflectivity curve. A procedure was developed for evaluating the goniometer performance using a set of diffraction grade Si crystals. This goniometer system was invaluable for identifying the best original crystals for further use and developing the techniques to select satisfactory curved crystals for the spectrometer.

  1. A Semitransparent and Flexible Single Crystal Si Thin Film: Silicon on Nothing (SON) Revisited.

    PubMed

    Park, Sanghyun; Lee, Yong Hwan; Wi, Jung-Sub; Oh, Jihun

    2016-07-27

    Ultrathin single crystal Si films offer a versatile vehicle for high performance flexible and semitransparent electric devices due to their outstanding optoelectric and mechanical properties. Here, we demonstrate the formation of an ultrathin (100) single crystal Si film based on morphological evolution of nanoporous Si during high temperature annealing. Square arrays of cylindrical Si pores are formed by nanoimprint lithography and deep reactive etching and then subjected to annealing in hydrogen ambient. By controlling the aspect ratio of nanoporous Si, defect-free single crystal Si membranes with controlled thicknesses from 330 to 470 nm are formed on a platelike void after the annealing. In addition, we investigate the role of oxygen impurities in a hydrogen atmosphere on defect formation on a Si surface and eliminate the oxygen-related defects on Si by controlling gas phase diffusion of oxygen impurities during annealing in a conventional tube furnace. Finally, we demonstrate the transfer of a defect-free, flexible, and wafer scale Si membrane with thickness of 470 nm onto a PDMS substrate, utilizing the platelike void under the membrane as a releaser. The ultrathin flexible Si film on PDMS shows optical transmittance of about 30-70% in visible and near-infrared light. PMID:27352938

  2. A Semitransparent and Flexible Single Crystal Si Thin Film: Silicon on Nothing (SON) Revisited.

    PubMed

    Park, Sanghyun; Lee, Yong Hwan; Wi, Jung-Sub; Oh, Jihun

    2016-07-27

    Ultrathin single crystal Si films offer a versatile vehicle for high performance flexible and semitransparent electric devices due to their outstanding optoelectric and mechanical properties. Here, we demonstrate the formation of an ultrathin (100) single crystal Si film based on morphological evolution of nanoporous Si during high temperature annealing. Square arrays of cylindrical Si pores are formed by nanoimprint lithography and deep reactive etching and then subjected to annealing in hydrogen ambient. By controlling the aspect ratio of nanoporous Si, defect-free single crystal Si membranes with controlled thicknesses from 330 to 470 nm are formed on a platelike void after the annealing. In addition, we investigate the role of oxygen impurities in a hydrogen atmosphere on defect formation on a Si surface and eliminate the oxygen-related defects on Si by controlling gas phase diffusion of oxygen impurities during annealing in a conventional tube furnace. Finally, we demonstrate the transfer of a defect-free, flexible, and wafer scale Si membrane with thickness of 470 nm onto a PDMS substrate, utilizing the platelike void under the membrane as a releaser. The ultrathin flexible Si film on PDMS shows optical transmittance of about 30-70% in visible and near-infrared light.

  3. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Nomura, Masahiro; Kage, Yuta; Müller, David; Moser, Dominik; Paul, Oliver

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  4. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    SciTech Connect

    Nomura, Masahiro; Kage, Yuta; Müller, David; Moser, Dominik; Paul, Oliver

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  5. Solution based synthesis of simple fcc Si nano-crystals under ambient conditions.

    PubMed

    Balcı, Mustafa H; Sæterli, Ragnhild; Maria, Jerome; Lindgren, Mikael; Holmestad, Randi; Grande, Tor; Einarsrud, Mari-Ann

    2013-02-28

    We demonstrate for the first time that simple face-centered cubic (fcc) silicon nano-crystals can be produced by a solution based bottom-up synthesis route under ambient conditions. Simple fcc Si nano-crystals (2-7 nm) were prepared at room temperature by using sodium cyclopentadienide as a reducing agent for silicon tetrachloride. Photoluminescence emission at 550 nm was observed for the fcc silicon nano-crystals upon excitation at 340 nm, indicating that fcc Si nano-crystals were exhibiting direct bandgap like semiconductor properties with very fast radiative recombination rates. The new synthesis route makes possible the production and study of simple fcc polymorphs of Si nano-crystals with an easy alteration of surface termination groups.

  6. Crystal growth of Ca3SiO4Br2: New photoluminescence bromosilicate host

    NASA Astrophysics Data System (ADS)

    Xia, Zhiguo; Li, Qiang; Li, Guowu; Xiong, Ming; Liao, Libing

    2011-03-01

    Single crystals of new bromosilicate compound Ca3SiO4Br2 were grown out of high-temperature Ca2SiO4/CaBr2 melts by the slow cooling process. Colorless, transparent and flaky crystals of Ca3SiO4Br2 were directly isolated from the final solid coagulation. The as-obtained crystals were investigated by energy dispersive X-ray spectrometer (EDS), scanning electron microscope (SEM) and polarized light microscope (PLM). The structure of the new Ca3SiO4Br2 compound was determined by single-crystal X-ray diffraction, and it crystallized in the triclinic system, space group P-1 with unit cell parameters a=8.0051(18) Å, b=8.720(3) Å, c=11.749(3) Å, α=69.07(0)°, β=89.98(0)°, γ=75.46(0)° and V=737.88(196) Å3, Z=3. Interestingly, a significant amount of Eu2+ enters the Ca3SiO4Br2 phase, and the Eu2+-doped Ca3SiO4Br2 phosphor shows a strong blue emission band centered at 469 nm under 365 nm UV light, which demonstrates that Ca3SiO4Br2:Eu2+ is a promising blue phosphor for use in white light LEDs.

  7. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

    PubMed

    Paskiewicz, Deborah M; Tanto, Boy; Savage, Donald E; Lagally, Max G

    2011-07-26

    Many important materials cannot be grown as single crystals in bulk form because strain destroys long-range crystallinity. Among them, alloys of group IV semiconductors, specifically SiGe alloys, have significant technological value. Using nanomembrane strain engineering methods, we demonstrate the fabrication of fully elastically relaxed Si(1-x)Ge(x) nanomembranes (NMs) for use as growth substrates for new materials. To do so, we grow defect-free, uniformly and elastically strained SiGe layers on Si substrates and release the SiGe layers to allow them to relax this strain completely as free-standing NMs. These SiGe NMs are transferred to new hosts and bonded there. We confirm the high structural quality of these new materials and demonstrate their use as substrates for technologically relevant epitaxial films by growing strained-Si layers and thick, lattice-matched SiGe alloy layers on them.

  8. Structural properties of a-Si films and their effect on aluminum induced crystallization

    SciTech Connect

    Tankut, Aydin; Ozkol, Engin; Karaman, Mehmet; Turan, Rasit; Canli, Sedat

    2015-10-15

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

  9. Crystallization of a Li2O2SiO2 Glass under High Hydrostatic Pressures

    NASA Technical Reports Server (NTRS)

    Fuss, T.; Day, D. E.; Lesher, C. E.; Ray, C. S.

    2004-01-01

    The crystallization behavior of a Li2O.2SiO2 (LS2) glass subjected to a uniform hydrostatic pressure of 4.5 or 6 GPa was investigated between 550 and 800 C using XRD, IR, Raman, TEM, NMR, and DTA. The density of the glass subjected to 6 GPa was between 2.52 plus or minus 0.01 and 2.57 plus or minus 0.01 grams per cubic centimeters, depending upon the processing temperatures, and was higher than that of the stoichiometric LS2 crystals, 2.46 plus or minus 0.01 grams per cubic centimeter. Thus, crystallization in 6 GPa glass occurred in a condition of negative volume dilatation, deltaV = V(sub glass) - V(sub crystal), while that for the 4.5 GPa glass occurred in the condition deltaV greater than 0. For deltaV greater than 0, which also includes the control glass at ambient (one atmosphere) pressure, the glasses always crystallize Li2Si2O5 (orthorhombic, Ccc2) crystals, but for deltaV less than 0 (6 GPa), the glasses crystallize Li2SiO3 crystals with a slightly deformed structure. The crystal growth rate vs. temperature curve moved to higher temperature with increasing pressure, and was independent of the sign of deltaV. These results for the effect of hydrostatic pressure on the crystallization of LS2 glass were discussed from thermodynamic considerations.

  10. Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

    SciTech Connect

    Pavlyk, B. V.; Lys, R. M. Didyk, R. I.; Shykorjak, J. A.

    2015-05-15

    Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.

  11. Si-O Bonded Interactions in Silicate Crystals and Molecules:  A Comparison

    SciTech Connect

    Gibbs, G. V.; Jayatilaka, D.; Spackman, M. A.; Cox, D. F.; Rosso, K. M.

    2006-11-01

    Bond critical point, local kinetic energy density, G(rc), and local potential energy density, V(rc), properties of the electron density distributions, ρ(r), calculated for silicates such as quartz and gas-phase molecules such as disiloxane are similar, indicating that the forces that govern the Si-O bonded interactions in silica are short-ranged and molecular-like. Using the G(rc)/ρ(rc) ratio as a measure of bond character, the ratio increases as the Si-O bond length, the local electronic energy density, H(rc) = G(rc) + V(rc), and the coordination number of the Si atom decrease and as the accumulation of the electron density at the bond critical point, ρ(rc), and the Laplacian, ∇2ρ(rc), increase. The G(rc)/ρ(rc) and H(rc)/ρ(rc) ratios categorize the bonded interaction as observed for other second row atom M-O bonds into discrete categories with the covalent character of each of the M-O bonds increasing with the H(rc)/ρ(rc) ratio. The character of the bond is examined in terms of the large net atomic charges conferred on the Si atoms comprising disiloxane, stishovite, quartz, and forsterite and the domains of localized electron density along the Si-O bond vectors and on the reflex side of the Si-O-Si angle together with the close similarity of the Si-O bonded interactions observed for a variety of hydroxyacid silicate molecules and a large number of silicate crystals. Finally, the bond critical point and local energy density properties of the electron density distribution indicate that the bond is an intermediate interaction between Al-O and P-O bonded interactions rather than being a closed-shell or a shared interaction.

  12. Vertical Bridgman growth of Bi 12SiO 20 crystal with axial vibration

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Liu, Y.; Jiang, W.; Pan, X. H.; Jin, W. Q.; Ai, F.

    2008-12-01

    Bi 12SiO 20 (BSO) single crystal was grown in the <2 2 0> direction by vertical Bridgman technique with axial vibration. The crystals grown with and without vibration have been characterized by X-ray rocking curves, chemical etching and optical transmission spectra. The results show that the quality of the crystal grown with vibration is more homogeneous. The size of the inclusions in crystal becomes smaller and the dislocation density is only 50% as low as that grown in the case of vibration. Furthermore, the optical transmittance is increased by about 10% compared with the crystal grown without vibration in the spectrum range of 600-800 nm.

  13. Measurement of single crystal surface parameters

    NASA Technical Reports Server (NTRS)

    Swanson, L. W.; Bell, A. E.; Strayer, R. W.

    1972-01-01

    The sticking coefficient and thermal desorption spectra of Cs from the (110) plane of W was investigated. A sticking coefficient of unity for the monolayer region was measured for T 250 K. Several distinct binding states were observed in the thermal desorption spectrum. Work function and electron reflection measurements were made on the (110) and (100) crystal faces of Mo. Both LEED and Auger were used to determine the orientation and cleanliness of the crystal surfaces. The work function values obtained for the (110) and (100) planes of Mo were 4.92 and 4.18 eV respectively.

  14. The mechanical properties of single crystal {alpha}-Si{sub 3}N{sub 4}

    SciTech Connect

    Reimanis, I.E.; Suematsu, H.; Petrovic, J.J.; Mitchell, T.E.

    1993-11-01

    The ambient and high temperature mechanical properties of single crystal {alpha}{minus}Si{sub 3}N{sub 4} synthesized by chemical vapor deposition are reported. Crack patterns in the as-grown crystals and around Vicker`s indentations reveal that significant residual stresses develop during growth. Indentation studies indicate that the cleavage is essentially isotropic in {alpha}{minus}Si{sub 3}N{sub 4} at 25 C as well as at 1400 C. Transmission electron microscopy on crystals deformed at high temperatures, confirmed previous observation that high-temperature slip occurs primarily on (1011)[1120] system.

  15. The synthesis of SbSI rodlike crystals with studded pyramids

    NASA Astrophysics Data System (ADS)

    Yang, Qing; Tang, Kaibin; Wang, Chunrui; Hai, Bin; Shen, Guozhen; An, Changhua; Zhang, Chunjuan; Qian, Yitai

    2001-12-01

    The SbSI rodlike crystals with studded pyramids were synthesized from the reaction among antimony trichloride, thiourea, and excessive sodium iodide under moderate hydrothermal conditions at 200°C. The final products were characterized by XRD, SEM, XPS, and elemental analysis. The SEM images showed the SbSI rodlike crystals are inserted some octahedrons on the surfaces of the rods. Typically, the structure is 3-4 mm in length, 8-10 μm in diameter for a singular crystal. The size of the pyramids on the surface is about 10 μm in height and the length of hemline is 6-12 μm.

  16. Floating zone crystal growth of selected R2PdSi3 ternary silicides

    SciTech Connect

    Xu, Yiku; Frontzek, Matthias D; Mazilu, Irina; Loeser, W; Behr, G; Buechner, Bernd; Liu, L

    2011-01-01

    Substitution of various rare earths R within the class of R2PdSi3 single crystals with hexagonal AlB2-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds with R = Tb, Tm, Pr, and Gd. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, except of Tb2PdSi3, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. Thin precipitates of RSi secondary phases were detected in the crystal matrix. Their phase fraction can be diminished by growth from Pd-rich melt compositions and annealing treatments. The compounds exhibit antiferromagnetic order below the N el temperatures TN: 23.6 K (Tb2PdSi3), 1.8 K (Tm2PdSi3), 2.17 K (Pr2PdSi3) and 22 K (Gd2PdSi3) with different grades of magnetic anisotropy.

  17. Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Iannelli, J. M.; Nieh, C. W.; Hashimoto, Shin

    1990-01-01

    Infrared radiation at wavelengths of 1-2 microns has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi2 particles with dimensions of 10-50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single-crystal silicon matrix. A peak quantum efficiency of 1.3 percent is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5-nm silicide thickness.

  18. Structural and surface topography analysis of AlN single crystals grown on 6H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Sumathi, R. R.; Barz, R. U.; Straubinger, T.; Gille, P.

    2012-12-01

    Bulk AlN single crystals (3 mm thick and 1 in. diameter) were hetero-epitaxially grown on (0001) 6H-SiC substrates by the sublimation method. Double-crystal x-ray diffraction and micro-Raman results confirm the good crystallinity as well as structural homogeneity of the grown crystals. The presence of low-angle grain boundaries was observed by x-ray diffraction rocking curve analysis and also supported by defect-selective etching analysis. The estimated defect density of the 3 mm thick crystals is about (5-8)×105 cm-2. 3D-microstructures with different morphology were observed on the as-grown crystal surfaces and were interpreted to be originated from screw dislocations. These screw dislocations are decorated by carbon impurities as evidenced by micro-Raman spectroscopic measurements. SiC incorporation in the grown crystals was found to be fairly low with 4 mol% at 2 mm distance from the interface and varies slightly between different sub-grains.

  19. On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

    SciTech Connect

    Mahan, A. H.; Ahrenkiel, S. P.; Roy, B.; Schropp, R.E.I.; Li, H.; Ginley, D. S.

    2006-05-01

    We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600 C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasing film CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.

  20. Mechanism of photoluminescence investigation of Si nano-crystals embedded in SiOx

    NASA Astrophysics Data System (ADS)

    Vivas Hernández, A.; Torchynska, T. V.; Guerrero Moreno, I.

    2010-05-01

    Nanoscaled Si (Ge) systems continue to be of interest for their potential application as Si (Ge) based light emiting materials and photonic structures. Optical properties of such systems are sensitive to nanocrystallite (NC) size fluctuations as well as to defects effects due to large surface to volume ratio in small NCs. Intensive research of Si (Ge) NCs is focused on the elucidation of the mechanism of radiative recombination with the aim to provide high efficient emission at room temperature in different spectral range. The bright visible photoluminescence (PL) of the Si (Ge)-SiOX system was investigated during last 15 years and several models were proposed. It was shown that blue (~2.64 eV) and green (~2.25 eV) PL are caused by various emitting centers in silicon oxide [1], while the nature of the more intensive red (1.70-2.00 eV) and infrared (0.80-1.60 eV) PL bands steel is no clear. These include PL model connected whit quantum confinement effects in Si (Ge) nanocrystallites [2-4], surface states on Si (Ge) nanocrystallites, as well as defects at the Si/SiOX (Ge/SiOX) interface and in the SiO2 layer [5-11]. It should be noted, that even investigation of PL on single Si quantum dots [12] cannot undoubtedly confirm the quantum confinement nature of red emission.

  1. Compensating defects in Si-doped AlN bulk crystals

    NASA Astrophysics Data System (ADS)

    Irmscher, K.; Schulz, T.; Albrecht, M.; Hartmann, C.; Wollweber, J.; Fornari, R.

    2007-12-01

    The rather low n-type conductivity observed in Si-doped sublimation-grown AlN bulk crystals is explained by the formation of high concentrations of compensating defects. The model is based on the experimental verification of a shallow impurity band formed by Si donors and the presence of acceptor-like electron traps within 1 eV below the conduction band edge. Further it is suggested that the majority of the Si donors is compensated by deep acceptors in the lower half of the band gap. This compensation model is an alternative to the controversially discussed assumption of Si DX center formation.

  2. Advanced piezoelectric crystal Ca3TaGa3Si2O14: growth, crystal structure perfection, and acoustic properties

    NASA Astrophysics Data System (ADS)

    Roshchupkin, Dmitry; Ortega, Luc; Plotitcyna, Olga; Erko, Alexei; Zizak, Ivo; Irzhak, Dmitry; Fahrtdinov, Rashid; Buzanov, Oleg

    2014-03-01

    A five-component crystal of the lanthanum-gallium silicate family Ca3TaGa3Si2O14 (CTGS) was grown by the Czochralski method. The CTGS crystal, like the langasite crystal (La3Ga5SiO14, LGS), possesses unique temperature properties and the fewer number of the Ga atoms in the unit cell makes the density much lower and, consequently, increases the velocity of acoustic wave propagation. The unit-cell parameters were determined by the powder diffraction technique. The defects in the CTGS crystal structure were studied by X-ray topography, which enables the visualization of growth banding characteristics of crystals grown by the Czochralski method. Surface acoustic wave (SAW) propagation in the CTGS crystal was investigated by the high-resolution X-ray diffraction method on the BESSY II synchrotron radiation source. The velocities of propagation and power flow angles of SAWs in the Y- and X-cuts of the CTGS crystal were determined from the X-ray diffraction spectra.

  3. A novel light trapping concept for liquid phase crystallized poly-Si thin-film solar cells on periodically nanoimprinted glass substrates

    NASA Astrophysics Data System (ADS)

    Preidel, V.; Amkreutz, D.; Sontheimer, T.; Back, F.; Rudigier-Voigt, E.; Rech, B.; Becker, C.

    2013-09-01

    Large grained polycrystalline silicon (poly-Si) absorbers were realized by electron beam induced liquid phase crystallization on 2 μm periodically patterned glass substrates and processed into a-Si:H/poly-Si heterojunction thin-film solar cells. The substrates were structured by nanoimprint lithography using a UV curable hybrid polymer sol-gel resist, resulting in a glassy high-temperature stable micro-structured surface. Structural analysis yielded high quality poly-Si material with grain sizes up to several hundred micrometers. An increase of absorption and an enhancement of the external quantum efficiency in the NIR as a consequence of light trapping due to the micro-structured poly-Si/substrate interface were observed. Up to now, only moderate solar cell parameters, a maximum open-circuit voltage of 413 mV and a short-circuit current density of 8 mA cm-2, were measured being significantly lower to what can be achieved with liquid phase crystallized poly-Si thin-film solar cells on planar glass substrates indicating that the substrate texture has impact on the electrical material quality. By reduction of the SiC interlayer thickness at the micro-structured poly- Si/substrate interface defect-related parasitic absorption was considerably minimized. This encourages the implementation of nanoimprinted tailored substrate textures for light trapping in liquid phase crystallized poly-Si thinfilm solar cells.

  4. Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. R.

    2012-10-01

    We present results of structural, electrical, and defect characterization of 4H-SiC epitaxial layers and bulk crystals and show performance of the radiation detectors fabricated from these materials. The crystal quality was evaluated by x-ray diffraction (XRD) rocking curve measurements, electron beam induced current (EBIC) imaging, and defect delineating etching in conjunction with optical microscopy and scanning electron microscopy (SEM). Studies of the electrically active intrinsic defects and impurities were conducted using thermally stimulated current (TSC) measurements in a wide temperature range of 94 - 750K. The results are correlated with the capability of bulk crystals and epitaxial layers for the detection of α-particles, low to high energy x-rays and gamma rays. High barrier rectifying Schottky diodes have been fabricated and tested. The epitaxial 4H-SiC radiation detectors exhibited low leakage current (< 1 nA) at ~ 200 V operating voltage up to 200 C. The soft x-ray responsivity measurements performed at the National Synchrotron Light Source (NSLS) at Brookhaven National Lab (BNL) showed significantly improved characteristics compared to commercially-available SiC UV photodiode detectors.

  5. Crystallization from high temperature solutions of Si in copper

    DOEpatents

    Ciszek, Theodore F.

    1994-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  6. SiPM based readout system for PbWO4 crystals

    NASA Astrophysics Data System (ADS)

    Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

    2013-08-01

    Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20-100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

  7. Structural phase transitions in Si and SiO2 crystals via the random phase approximation

    NASA Astrophysics Data System (ADS)

    Xiao, Bing; Sun, Jianwei; Ruzsinszky, Adrienn; Feng, Jing; Perdew, John P.

    2012-09-01

    We have assessed the performance of the non-self-consistent random phase approximation (RPA) on two pressure-induced structural phase transitions, diamond to β-Sn Si in Si and α-quartz to stishovite in SiO2. The calculated equilibrium lattice properties of the four structures are in better agreement with experimental results than are those from several semilocal functionals. The energy differences between the high- and low-pressure phases are found to be 0.37 eV/Si and 0.39 eV/SiO2, respectively. The transition pressure obtained from our RPA calculations for diamond to β-Sn in Si is 12.2 GPa, in excellent agreement with the experimental value 11.3-12.6 GPa. However, the α-quartz to stishovite phase-transition pressure in SiO2 is found to be 5.6 GPa, lower than the experimental 7.46 GPa; the Perdew-Burke-Ernzerhof (PBE) semilocal functional gives the transition pressure closest to experiment in this case. We conclude that the non-self-consistent, nonlocal RPA accurately describes the insulator-to-metal transition in Si, where semilocal density functionals tend to fail. But the RPA error cancellation that is nearly perfect in many solids, including Si, may be less perfect in solid SiO2, as it is in many molecules.

  8. Synthesis, crystal structure, and magnetic properties of novel intermetallic compounds R2Co2SiC (R = Pr, Nd).

    PubMed

    Zhou, Sixuan; Mishra, Trinath; Wang, Man; Shatruk, Michael; Cao, Huibo; Latturner, Susan E

    2014-06-16

    The intermetallic compounds R2Co2SiC (R = Pr, Nd) were prepared from the reaction of silicon and carbon in either Pr/Co or Nd/Co eutectic flux. These phases crystallize with a new stuffed variant of the W2CoB2 structure type in orthorhombic space group Immm with unit cell parameters a = 3.978(4) Å, b = 6.094(5) Å, c = 8.903(8) Å (Z = 2; R1 = 0.0302) for Nd2Co2SiC. Silicon, cobalt, and carbon atoms form two-dimensional flat sheets, which are separated by puckered layers of rare-earth cations. Magnetic susceptibility measurements indicate that the rare earth cations in both analogues order ferromagnetically at low temperature (TC ≈ 12 K for Nd2Co2SiC and TC ≈ 20 K for Pr2Co2SiC). Single-crystal neutron diffraction data for Nd2Co2SiC indicate that Nd moments initially align ferromagnetically along the c axis around ∼12 K, but below 11 K, they tilt slightly away from the c axis, in the ac plane. Electronic structure calculations confirm the lack of spin polarization for Co 3d moments. PMID:24898034

  9. Synthesis, crystal structure, and magnetic properties of novel intermetallic compounds R2Co2SiC (R = Pr, Nd).

    PubMed

    Zhou, Sixuan; Mishra, Trinath; Wang, Man; Shatruk, Michael; Cao, Huibo; Latturner, Susan E

    2014-06-16

    The intermetallic compounds R2Co2SiC (R = Pr, Nd) were prepared from the reaction of silicon and carbon in either Pr/Co or Nd/Co eutectic flux. These phases crystallize with a new stuffed variant of the W2CoB2 structure type in orthorhombic space group Immm with unit cell parameters a = 3.978(4) Å, b = 6.094(5) Å, c = 8.903(8) Å (Z = 2; R1 = 0.0302) for Nd2Co2SiC. Silicon, cobalt, and carbon atoms form two-dimensional flat sheets, which are separated by puckered layers of rare-earth cations. Magnetic susceptibility measurements indicate that the rare earth cations in both analogues order ferromagnetically at low temperature (TC ≈ 12 K for Nd2Co2SiC and TC ≈ 20 K for Pr2Co2SiC). Single-crystal neutron diffraction data for Nd2Co2SiC indicate that Nd moments initially align ferromagnetically along the c axis around ∼12 K, but below 11 K, they tilt slightly away from the c axis, in the ac plane. Electronic structure calculations confirm the lack of spin polarization for Co 3d moments.

  10. Magnetocaloric effect in a dual-phase coupled LaFe11Si2 crystal prepared by a modified high-pressure zone-melting technique

    NASA Astrophysics Data System (ADS)

    Feng, Shutong; Fang, Yue; Zhai, Qijie; Luo, Zhiping; Zheng, Hongxing

    2016-10-01

    A modified high-pressure optical zone-melting technique was adopted to grow a rare-earth-based LaFe11Si2 crystal in the present work. Dual-phase coupled microstructure was obtained where aligned α(Fe) phase distributed in the La(Fe,Si)13 matrix. Magnetic measurements showed that the produced crystal underwent a second-order magnetic transition in the vicinity of 250 K. Under a magnetic field change of 30 kOe, the refrigeration capacity (RC) of the produced crystal reached up to 162 J/kg. It was confirmed that zone-melting crystal growth technique is an effective approach to strikingly enhance the magnetocaloric effect of La-Fe-Si refrigeration materials.

  11. Ionic conductivity in single-crystal LiAlSi2O6: influence of structure on lithium mobility

    NASA Astrophysics Data System (ADS)

    Welsch, A.-M.; Murawski, D.; Prekajski, M.; Vulic, P.; Kremenovic, A.

    2015-05-01

    With the increased interest in application of Li aluminosilicate materials as solid electrolytes, this study focuses on investigating the influence of structure on conductivity properties in single-crystal LiAlSi2O6 which is characterized by three crystal polymorphs where only structural arrangements differ while the amount of mobile carriers is identical. Two single-crystal polymorphic phases produced at ambient pressure are with tetragonal P41212 symmetry and hexagonal P6222 symmetry, also referred to as β- and γ-spodumene in the older literature. For this study, flux-grown hexagonal spodumene single-crystals were measured for conductivity parallel to the crystallographic c-axis and the results were compared with previously published results for tetragonal spodumene, both as single-crystal and polycrystalline aggregate, monoclinic spodumene ( α-spodumene) and LiAlSi2O6 glass. The activation energy E a of 79.69 ± 0.38 kJ/mol for hexagonal phase is very similar to the other crystalline polymorphs with the same orientation. However, the σ DC in hexagonal spodumene was determined to be higher than other crystalline phases and about 1.5 orders of magnitude lower than the conductivity in glass LiAlSi2O6 phase. Additionally, the densities of atomic packing were compared between phases, and the differences in the openness of the structures indicate that the more dominant effect on the Li mobility lies with the actual spatial arrangement of Li sites and the Si/Al sublattice.

  12. Optical filters using Cantor quasi-periodic one dimensional photonic crystal based on Si/SiO2

    NASA Astrophysics Data System (ADS)

    Sahel, S.; Amri, R.; Bouaziz, L.; Gamra, D.; Lejeune, M.; Benlahsen, M.; Zellama, K.; Bouchriha, H.

    2016-09-01

    Quasi-periodic one-dimensional Cantor photonic crystals are elaborated by depositing alternating silicon and silica Si/SiO2 layers by radiofrequency magnetron sputtering technique with cold plasma. Transmittance and reflectance spectra of these quasi crystals exhibit a large photonic band gap in the infrared range at normal incidence which is well reproduced by a theoretical model based on the transfer matrix method. The obtained wide photonic band gap reveals the existence of permitted modes depending on the nature and characteristics of the built in system which can constitute optical windows. This effect can be a good alternative for the design of flexible filters used in many areas of applications such as telecommunication and optoelectronic devices.

  13. Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide

    SciTech Connect

    Lo Savio, R.; Galli, M.; Liscidini, M.; Andreani, L. C.; Franzò, G.; Iacona, F.; Miritello, M.; Irrera, A.; Sanfilippo, D.; Piana, A.; Priolo, F.

    2014-03-24

    We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54 μm, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission in a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.

  14. The system Ta-V-Si: Crystal structure and phase equilibria

    SciTech Connect

    Khan, A.U.; Broz, P.; Bursik, J.; Grytsiv, A.; Chen, X.-Q.; Giester, G.; Rogl, P.

    2012-03-15

    Phase relations have been evaluated for the Ta-V-Si system at 1500 and 1200 Degree-Sign C. Three ternary phases were found: {tau}{sub 1}-(Ta,V){sub 5}Si{sub 3} (Mn{sub 5}Si{sub 3}-type), {tau}{sub 2}-Ta(Ta,V,Si){sub 2} (MgZn{sub 2}-type) and {tau}{sub 3}-Ta(Ta,V,Si){sub 2} (MgCu{sub 2}-type). The crystal structure of {tau}{sub 2}-Ta(Ta,V,Si){sub 2} was solved by X-ray single crystal diffraction (space group P6{sub 3}/mmc). Atom order in the crystal structures of {tau}{sub 1}-(Ta,V){sub 5}Si{sub 3} (Mn{sub 5}Si{sub 3} type) and {tau}{sub 3}-Ta(Ta,V,Si){sub 2} was derived from X-ray powder diffraction data. A large homogeneity range was found for {tau}{sub 1}-(Ta{sub x}V{sub 1-x}){sub 5}Si{sub 3} revealing random exchange of Ta and V at a constant Si content. At 1500 Degree-Sign C, the end points of the {tau}{sub 1}-phase solution (0.082{<=}x{<=}0.624) are in equilibrium with the solutions (Ta{sub 1-x}V{sub x}){sub 5}Si{sub 3} (Cr{sub 5}B{sub 3} type, 0{<=}x{<=}0.128) and (Ta{sub x}V{sub 1-x}){sub 5}Si{sub 3} (W{sub 5}Si{sub 3} type, 0{<=}x{<=}0.048). - Graphical abstract: Phase relations have been evaluated for the Ta-V-Si system at 1500 and 1200 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Phase relations have been evaluated for the Ta-V-Si system at 1500 and 1200 Degree-Sign C. Black-Right-Pointing-Pointer Three ternary phases were found at 1500 Degree-Sign C. Black-Right-Pointing-Pointer At 1500 Degree-Sign C, {tau}{sub 1}-phase has large homogeneity region (0.064{<=}x{<=}0.624).

  15. Mechanism of the Reduced Thermal Conductivity of Fishbone-Type Si Phononic Crystal Nanostructures

    NASA Astrophysics Data System (ADS)

    Nomura, M.; Maire, J.

    2015-06-01

    The mechanism of the reduced thermal conductivity of fishbone-type phononic crystal (PnC) nanostructures, in which ballistic phonon transport is dominant, was investigated with consideration of both the wave and particle nature of phonons. Phononic band diagrams were calculated for an Si nanowire and a fishbone-type PnC structure with a period of 100 nm, and a clear reduction of the group velocity of phonons, because of a zone-folding effect, was shown. Air-suspended Si nanowires and fishbone-type PnC structures were fabricated by electron beam (EB) lithography, and their thermal conductivities were measured by use of the originally developed micro time-domain thermoreflectance method. The PnC structure had a much lower thermal conductivity. We measured the thermal conductivity of a variety of PnC structures with different fin widths to investigate the mechanism of the reduced thermal conductivity observed. The result indicates that the increase of the phonon traveling distance. as a result of the fins, also results in reduced thermal conductivity.

  16. Mechanism of the Reduced Thermal Conductivity of Fishbone-Type Si Phononic Crystal Nanostructures

    NASA Astrophysics Data System (ADS)

    Nomura, M.; Maire, J.

    2014-09-01

    The mechanism of the reduced thermal conductivity of fishbone-type phononic crystal (PnC) nanostructures, in which ballistic phonon transport is dominant, was investigated with consideration of both the wave and particle nature of phonons. Phononic band diagrams were calculated for an Si nanowire and a fishbone-type PnC structure with a period of 100 nm, and a clear reduction of the group velocity of phonons, because of a zone-folding effect, was shown. Air-suspended Si nanowires and fishbone-type PnC structures were fabricated by electron beam (EB) lithography, and their thermal conductivities were measured by use of the originally developed micro time-domain thermoreflectance method. The PnC structure had a much lower thermal conductivity. We measured the thermal conductivity of a variety of PnC structures with different fin widths to investigate the mechanism of the reduced thermal conductivity observed. The result indicates that the increase of the phonon traveling distance. as a result of the fins, also results in reduced thermal conductivity.

  17. Measurements of crystal growth kinetics at extreme deviations from equilibrium

    SciTech Connect

    Aziz, M.J.

    1992-07-14

    We have measured solute trapping of several solutes in Al and Ni during rapid solidification. We have also made preliminary measurements of solute trapping of As in Si, trapped 20 atomic percent As in Si, and made a preliminary measurement of the T{sub o} curve in Si-As. 5 figs.

  18. Studies of an array of PbF$_2$ Cherenkov crystals with large-area SiPM readout

    SciTech Connect

    Fienberg, A.T.; et al.

    2015-05-21

    The electromagnetic calorimeter for the new muon (g-2) experiment at Fermilab will consist of arrays of PbF2 Cherenkov crystals read out by large-area silicon photo-multiplier (SiPM) sensors. We report here on measurements and simulations using 2.0 -- 4.5 GeV electrons with a 28-element prototype array. All data were obtained using fast waveform digitizers to accurately capture signal pulse shapes versus energy, impact position, angle, and crystal wrapping. The SiPMs were gain matched using a laser-based calibration system, which also provided a stabilization procedure that allowed gain correction to a level of 1e-4 per hour. After accounting for longitudinal fluctuation losses, those crystals wrapped in a white, diffusive wrapping exhibited an energy resolution sigma/E of (3.4 +- 0.1) % per sqrt(E/GeV), while those wrapped in a black, absorptive wrapping had (4.6 +- 0.3) % per sqrt(E/GeV). The white-wrapped crystals---having nearly twice the total light collection---display a generally wider and impact-position-dependent pulse shape owing to the dynamics of the light propagation, in comparison to the black-wrapped crystals, which have a narrower pulse shape that is insensitive to impact position.

  19. Studies of an array of PbF2 Cherenkov crystals with large-area SiPM readout

    NASA Astrophysics Data System (ADS)

    Fienberg, A. T.; Alonzi, L. P.; Anastasi, A.; Bjorkquist, R.; Cauz, D.; Fatemi, R.; Ferrari, C.; Fioretti, A.; Frankenthal, A.; Gabbanini, C.; Gibbons, L. K.; Giovanetti, K.; Goadhouse, S. D.; Gohn, W. P.; Gorringe, T. P.; Hertzog, D. W.; Iacovacci, M.; Kammel, P.; Kaspar, J.; Kiburg, B.; Li, L.; Mastroianni, S.; Pauletta, G.; Peterson, D. A.; Počanić, D.; Smith, M. W.; Sweigart, D. A.; Tishchenko, V.; Venanzoni, G.; Van Wechel, T. D.; Wall, K. B.; Winter, P.; Yai, K.

    2015-05-01

    The electromagnetic calorimeter for the new muon (g - 2) experiment at Fermilab will consist of arrays of PbF2 Cherenkov crystals read out by large-area silicon photo-multiplier (SiPM) sensors. We report here on measurements and simulations using 2.0-4.5 GeV electrons with a 28-element prototype array. All data were obtained using fast waveform digitizers to accurately capture signal pulse shapes vs. energy, impact position, angle, and crystal wrapping. The SiPMs were gain matched using a laser-based calibration system, which also provided a stabilization procedure that allowed gain correction to a level of 10-4 per hour. After accounting for longitudinal fluctuation losses, those crystals wrapped in a white, diffusive wrapping exhibited an energy resolution σ/E of (3.4 ± 0.1) % /√{ E / GeV }, while those wrapped in a black, absorptive wrapping had (4.6 ± 0.3) % /√{ E / GeV }. The white-wrapped crystals-having nearly twice the total light collection-display a generally wider and impact-position-dependent pulse shape owing to the dynamics of the light propagation, in comparison to the black-wrapped crystals, which have a narrower pulse shape that is insensitive to impact position.

  20. Metal-induced crystallization of a-Si thin films by nonvacuum treatments

    SciTech Connect

    Kalkan, A.K.; Fonash, S.J.

    1997-11-01

    Thin film polycrystalline Si (poly-Si) is of considerable interest today for microelectronics, flat panel displays, and photovoltaics. Low thermal budget solid-phase crystallization (SPC) of a-Si precursor films was achieved using surface treatments with metal-containing solutions. Two different treatment procedures were demonstrated. With these treatments, one based on a Pd solution and the other on a Ni solution, the SPC time at 600 C was reduced from 18 h to 10 min or less. This approach renders the usual vacuum deposition step used in metal-induced crystallization unnecessary. The authors find that the ultraviolet reflectance and Raman shift signals for the crystallized films are independent of whether the SPC-enhancing metal is applied by vacuum or solution. These characterization results do differ, however, with the metal applied.

  1. Ferromagnetism in proton irradiated 4H-SiC single crystal

    SciTech Connect

    Zhou, Ren-Wei; Wang, Hua-Jie; Chen, Wei-Bin; Li, Fei; Liu, Xue-Chao Zhuo, Shi-Yi; Shi, Er-Wei

    2015-04-15

    Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

  2. Single-crystal growth of aluminum nitride on 6H-SiC substrates by an open-system sublimation method

    NASA Astrophysics Data System (ADS)

    Kamata, Hiroyuki; Naoe, Kunihiro; Sanada, Kazuo; Ichinose, Noboru

    2009-02-01

    Single-crystalline aluminum nitride (AlN) has successfully been grown on 6H-SiC (0 0 0 1) substrates by sublimation using an open-system crucible at 2273 K within 30 h. The thickness of the AlN single-crystal layer is about 1 mm. The dislocation density in the vicinity of the crystal surface has been calculated to be less than 10 7 cm -2 from transmission electron microscopy observation and etch pit density measurement of the crystal. Single-crystal growth of AlN has been carried out by varying supersaturation of Al vapor and employing on- and off-axis SiC substrates. Supersaturation of Al vapor has critically influenced the crystalline quality and morphology, while it has not affected the growth rate so much. Thus, precise control of supersaturation is a key to ensuring the quality of AlN single crystals. The quality of the crystals grown on off-axis SiC substrates is superior to that grown on on-axis SiC substrates. Moreover, the quality has been improved as the thickness of the crystals has increased.

  3. Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.; Manion, S. J.; Milliken, S. J.; Pike, W. T.; Fathauer, R. W.

    1995-01-01

    The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

  4. SERS active Ag encapsulated Fe@SiO2 nanorods in electromagnetic wave absorption and crystal violet detection.

    PubMed

    Senapati, Samarpita; Srivastava, Suneel Kumar; Singh, Shiv Brat; Kulkarni, Ajit R

    2014-11-01

    The present work is focused on the preparation of Fe nanorods by the chemical reduction of FeCl3 (aq) using NaBH4 in the presence of glycerol as template followed by annealing of the product at 500°C in the presence of H2 gas flow. Subsequently, its surface has been modified by silica followed by silver nanoparticles to form silica coated Fe (Fe@SiO2) and Ag encapsulated Fe@SiO2 nanostructure employing the Stöber method and silver mirror reaction respectively. XRD pattern of the products confirmed the formation of bcc phase of iron and fcc phase of silver, though silica remained amorphous. FESEM images established the growth of iron nanorods from the annealed product and also formation of silica and silver coating on its surface. The appearance of the characteristics bands in FTIR confirmed the presence of SiO2 on the Fe surface. Magnetic measurements at room temperature indicated the ferromagnetic behavior of as prepared iron nanorods, Fe@SiO2 and silver encapsulated Fe@SiO2 nanostructures. All the samples exhibited strong microwave absorption property in the high frequency range (10GHz), though it is superior for Ag encapsulated Fe@SiO2 (-14.7dB) compared with Fe@SiO2 (-9.7dB) nanostructures of the same thickness. The synthesized Ag encapsulated Fe@SiO2 nanostructure also exhibited the SERS phenomena, which is useful in the detection of the carcinogenic dye crystal violet (CV) upto the concentration of 10(-10)M. All these findings clearly demonstrate that the Ag encapsulated Fe@SiO2 nanostructure could efficiently be used in the environmental remediation.

  5. SERS active Ag encapsulated Fe@SiO2 nanorods in electromagnetic wave absorption and crystal violet detection.

    PubMed

    Senapati, Samarpita; Srivastava, Suneel Kumar; Singh, Shiv Brat; Kulkarni, Ajit R

    2014-11-01

    The present work is focused on the preparation of Fe nanorods by the chemical reduction of FeCl3 (aq) using NaBH4 in the presence of glycerol as template followed by annealing of the product at 500°C in the presence of H2 gas flow. Subsequently, its surface has been modified by silica followed by silver nanoparticles to form silica coated Fe (Fe@SiO2) and Ag encapsulated Fe@SiO2 nanostructure employing the Stöber method and silver mirror reaction respectively. XRD pattern of the products confirmed the formation of bcc phase of iron and fcc phase of silver, though silica remained amorphous. FESEM images established the growth of iron nanorods from the annealed product and also formation of silica and silver coating on its surface. The appearance of the characteristics bands in FTIR confirmed the presence of SiO2 on the Fe surface. Magnetic measurements at room temperature indicated the ferromagnetic behavior of as prepared iron nanorods, Fe@SiO2 and silver encapsulated Fe@SiO2 nanostructures. All the samples exhibited strong microwave absorption property in the high frequency range (10GHz), though it is superior for Ag encapsulated Fe@SiO2 (-14.7dB) compared with Fe@SiO2 (-9.7dB) nanostructures of the same thickness. The synthesized Ag encapsulated Fe@SiO2 nanostructure also exhibited the SERS phenomena, which is useful in the detection of the carcinogenic dye crystal violet (CV) upto the concentration of 10(-10)M. All these findings clearly demonstrate that the Ag encapsulated Fe@SiO2 nanostructure could efficiently be used in the environmental remediation. PMID:25262081

  6. Numerical simulations of SiGe crystal growth by the traveling liquidus-zone method in a microgravity environment

    NASA Astrophysics Data System (ADS)

    Abe, K.; Sumioka, S.; Sugioka, K.-I.; Kubo, M.; Tsukada, T.; Kinoshita, K.; Arai, Y.; Inatomi, Y.

    2014-09-01

    Recently, a Si1-xGex (approximately x=0.5) crystal has been grown by the traveling liquidus-zone (TLZ) method under microgravity condition in the International Space Station (ISS). In this work, a mathematical model of the TLZ crystal growth has been developed to investigate details of the transport and solidification phenomena occurred during the TLZ growth of SiGe crystals performed in the ISS. Using this model, the experimental Ge concentration distributions in the grown SiGe crystal is explained, and the emissivity variation of the metal cartridge surface due to oxidation during the crystal growth is revealed to strongly affect the Ge concentration distribution in the grown crystal. In addition, a strategy for growing SiGe crystals, which are more homogeneous than those obtained in the current experiment, is proposed on the basis of the numerical results.

  7. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  8. Extreme low thermal conductivity in nanoscale 3D Si phononic crystal with spherical pores.

    PubMed

    Yang, Lina; Yang, Nuo; Li, Baowen

    2014-01-01

    In this work, we propose a nanoscale three-dimensional (3D) Si phononic crystal (PnC) with spherical pores, which can reduce the thermal conductivity of bulk Si by a factor up to 10,000 times at room temperature. Thermal conductivity of Si PnCs depends on the porosity, for example, the thermal conductivity of Si PnCs with porosity 50% is 300 times smaller than that of bulk Si. The phonon participation ratio spectra demonstrate that more phonons are localized as the porosity increases. The thermal conductivity is insensitive to the temperature changes from room temperature to 1100 K. The extreme-low thermal conductivity could lead to a larger value of ZT than unity as the periodic structure affects very little the electric conductivity.

  9. Measuring induction times and crystal nucleation rates.

    PubMed

    Brandel, Clément; ter Horst, Joop H

    2015-01-01

    A large variation is observed in induction times measured under equal conditions in 1 ml solutions. Ruling out experimental errors, this variation originates from the nucleation process. The induction time distribution is explained by the stochastic nature of nucleation if the number of nuclei formed is approaching 1 per vial. Accurate heterogeneous crystal nucleation rates were determined from the induction time distributions on a 1 ml scale for racemic diprophylline in two solvents. The difference in nucleation behaviour in the two solvents originates from the energy barrier for nucleation, which is much higher in the solvent in which induction times are much longer. In addition the pre-exponential factor for the crystal nucleation rate in both solvents is rather low compared to predictions using Classical Nucleation Theory. Unfortunately, concentration and surface characteristics of the effective heterogeneous particles are not known which clouds a further molecular interpretation.

  10. Raman Spectroscopy Characterization of Se- Doped Bi{sub 12}SiO{sub 20} Crystals

    SciTech Connect

    Milenov, T. I.; Rafailov, P. M.; Yankova, L.; Veleva, M. N.; Dobreva, S.; Thomsen, C.; Egorysheva, A. V.; Skorikov, V. M.; Titorenkova, R.

    2010-01-21

    Crystals of BSO doped with Se are successfully grown by the Czochralski method. The measured concentration of Se is 1.75x10{sup 18} cm{sup -3} and of Fe is 6.4x10{sup 18} cm{sup -3}, i.e. the concentration of Fe is significantly increased. It is assumed that the doping takes place through the replacement 3Si{sup 4+}->(Se{sup 6+}+2Fe{sup 3+}). The doping-induced shift of the Raman-active A, E and F-modes is not significant and it is concluded that the lattice distortions caused by doping are very small in BSO crystals doped with Se at low concentrations. The doping with Se at high concentration leads to occasional second phase inclusions. It is observed that all A, E and F- modes in the Raman spectrum are downshifted with 2-5 cm{sup -1}. It is concluded that the doping with Se at high concentrations follows the same mechanism as those with low concentrations but the introduced lattice distortions are more significant.

  11. Anisotropic physical properties of PrRhAl4Si2 single crystal: A non-magnetic singlet ground state compound

    NASA Astrophysics Data System (ADS)

    Maurya, Arvind; Kulkarni, R.; Thamizhavel, A.; Dhar, S. K.

    2016-08-01

    We have grown the single crystal of PrRhAl4Si2, which crystallizes in the tetragonal crystal structure. From the low temperature physical property measurements like, magnetic susceptibility, magnetization, heat capacity and electrical resistivity, we found that this compound does not show any magnetic ordering down to 70 mK. Our crystal field calculations on the magnetic susceptibility and specific heat measurements reveal that the 9-fold degenerate (2 J + 1) levels of Pr atom in PrRhAl4Si2 split into 7 levels, with a singlet ground state and a well-separated excited doublet state at 123 K, with a overall level splitting energy of 320 K.

  12. The electro-optical behavior of liquid crystal molecules on the surface of SiO2 inorganic thin films.

    PubMed

    Sung, Shi-Joon; Yang, Kee-Jeong; Kim, Dae-Hwan; Do, Yun Seon; Kang, Jin-Kyu; Choi, Byeong-Dae

    2009-12-01

    Inorganic thin films are well known for the liquid crystal alignment layers for LCoS application due to the higher thermal and photochemical stability of inorganic materials. The switching time of liquid crystals is the important factor for the projection application and the faster switching time is required for the high quality display. The switching behavior of liquid crystal molecules on inorganic thin films might be closely related with the surface properties of the inorganic thin films. Therefore the understanding of surface properties of the inorganic thin films is required for the enhancement of the switching time of liquid crystals of LCoS devices. In this work, we prepared the SiO2 inorganic thin films and the electro-optical behavior of liquid crystal molecules on SiO2 thin film was investigated. The sputtering condition of SiO2 thin film was closely related with the thickness and the surface morphology of SiO2 thin film. The switching time of liquid crystals with negative dielectric constant on SiO2 inorganic thin films was dominantly affected by the size of protrusion on the surface of SiO2 thin film and the surface roughness of SiO2 thin film was also related with the switching time of liquid crystals. From these results, it is possible to prepare the SiO2 inorganic thin film suitable for the liquid crystal alignment layer for VAN LC mode.

  13. Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane

    NASA Astrophysics Data System (ADS)

    Anzalone, R.; D'Arrigo, G.; Camarda, M.; Piluso, N.; La Via, F.

    2014-03-01

    The following paper explores the development of a combined bulge test/micro-Raman analysis. This analysis, together with a refined load-deflection model (valid in both small and large deformation regimes, defined as the regimes in which the ratio between membrane deflection and width is smaller or larger than 1:10), allowed the determination of the elastic and optical properties of high quality single-crystal 3C-SiC squared membranes. Specifically we have evaluated the breaking strain of the membranes by measuring the breaking pressure for various membrane widths. The relation between the shift of the Raman Transverse Optical (TO) mode and the total residual strain (Δa/a) has been determined by measuring the TO shift for different membrane deflections. This relation, which allows determination of the residual strain by simply measuring the TO shift, was known only for thick samples (Olego et al) and high-oriented (100) thin films (Rohmfeld et al). Finally, we have calculated the TO stress-free value of high-quality thin single-crystal 3C-SiC/Si(100) films as 796.71 ± 0.04 cm-1.

  14. The Formation of Crystal Defects in a Fe-Mn-Si Alloy Under Cyclic Martensitic Transformations.

    PubMed

    Bondar, Vladimir I; Danilchenko, Vitaliy E; Iakovlev, Viktor E

    2016-12-01

    Formation of crystalline defects due to cyclic martensitic transformations (CMT) in the iron-manganese Fe-18 wt.% Mn-2 wt.% Si alloy was investigated using X-ray diffractometry. Conditions for accumulation of fragment sub-boundaries with low-angle misorientations and chaotic stacking faults in crystal lattice of austenite and ε-martensite were analyzed.

  15. Forced diffusion via electrically induced crystallization for fabricating ZnO–Ti–Si structures

    SciTech Connect

    Chen, Yen-Ting; Hung, Fei-Yi

    2014-11-15

    Highlights: • ZnO–Ti–Si system is very important for the structural design. • The electrically induced crystallization method is useful to diffusion process. • Intermetallic compound characteristics have been presented using electrically induced crystallization. • Interface mechanism about diffusion of TZO–TiSi{sub x}–Si structure is presented. - Abstract: Electrically induced crystallization (EIC) is a recently developed process for material modification. This study is applied to EIC to fabricate ZnO–Ti–Si multi-layer structures of various thicknesses to dope Ti into ZnO thin film and to form TiSi{sub x} intermetallic compound (IMC) in a single step. The IMC layer was confirmed using transmission electron microscopy images. The Ti layer thickness was more than 40 nm, which enhanced electron transmission and decreased the total electrical resistance in the structure. Finally, the diffusion mechanisms of EIC and the annealing process were investigated. This study shows that the EIC process has potential for industrial applications.

  16. Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures

    NASA Astrophysics Data System (ADS)

    De Salvo, B.; Ghibaudo, G.; Luthereau, P.; Baron, T.; Guillaumot, B.; Reimbold, G.

    2001-08-01

    In this work the transport mechanisms and charge trapping of novel dielectric systems based on semiconductor nano-crystals embedded in a dielectric matrix are studied. In particular, stacked films composed of a thin bottom dielectric (2-4 nm thick SiO2 or Si3N4), with an embedded two-dimensional (2-D) array of Si nano-crystals (obtained by low pressure chemical vapor deposition or by annealing of silicon rich oxide) and a thick top dielectric (8 nm-thick SiO2) are investigated. Gate leakage currents, at medium/high electric fields, are examined at temperatures varying between 77 and 473 K. Charge trapping phenomena, occurring at low electric fields, are studied as a function of the stressing gate voltage and the stressing time. Experimental results are explained by means of an elastic tunneling model, which takes into account the main structural characteristics of the Si-dots (size dispersion, density, spatial distribution) as well as the effect of trapped charges in the silicon nano-crystals.

  17. Methods for growth of relatively large step-free SiC crystal surfaces

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  18. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Crystal Structure and High Hardness Mechanism of Orthorhomic Si2N2O

    NASA Astrophysics Data System (ADS)

    Xiong, Lan-Tian; Cao, Mao-Sheng; Hou, Zhi-Ling

    2009-07-01

    A quasi-single-phase orthorombic Si2N2O compound is obtained by hot-pressing sintering using homogeneous precursors as raw materials under nitrogen atmosphere. The bulk hardness of orthorombic Si2N2O (o-Si2N2O) is investigated by a nanoindenter experiment; the results show that o-Si2N2O with maximal value about 19GPa has a high hardness covalent crystal besides β-Si3N4. It is discovered that the high hardness is mainly attributed to the unique crystal structure. The bridging O atoms in the o-Si2N2O are responsible for decreasing hardness. It is found that the Si-O bonds in the open tetrahedral crystal structure are more easily broken and tilted than other bonds.

  19. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    NASA Technical Reports Server (NTRS)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  20. Low temperature rhombohedral single crystal SiGe epitaxy on c-plane sapphire

    NASA Astrophysics Data System (ADS)

    Duzik, Adam J.; Choi, Sang H.

    2016-04-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100°C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550°C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  1. Evolution of the Shape of Detached GeSi Crystals in Microgravity

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.

    2013-01-01

    A series of GeSi crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. An objective of these experiments is to understand the mechanisms of detached Bridgman growth, a process in which a gap exists between the growing semiconductor crystal and the crucible wall. Crystals grown without wall contact have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. Numerical calculations are used to determine the conditions in which a gap can exist. According to crystal shape stability theory, only some of these gap widths will be dynamically stable. Beginning with a crystal diameter that differs from stable conditions, the transient crystal growth process is analyzed. In microgravity, dynamic stability depends only on capillary effects and is decoupled from heat transfer. Depending on the initial conditions and growth parameters, the crystal shape will evolve towards the crucible wall, towards a stable gap width, or towards the center of the crucible, collapsing the meniscus.

  2. Crystallization Behavior of Amorphous Si3N4 and Particle Size Control of the Crystallized α-Si3N4.

    PubMed

    Chung, Yong-Kwon; Kim, Shin-A; Koo, Jae-Hong; Oh, Hyeon-Cheol; Chi, Eun-Ok; Hahn, Jee-Hyun; Park, Chan

    2016-05-01

    Amorphous silicon nitride powder prepared by low-temperature vapor-phase reaction was heat treated at various temperatures for different periods of time to examine the crystallization behavior. The effects of the heat-treatment temperature and duration on the degree of crystallization were investigated along with the effect of the heat-up rate on the particle size, and its distribution, of the crystallized α-phase silicon nitride powder. A phase transition from amorphous to α-phase occurred at a temperature above 1400 degrees C. The crystallization. process was completed after heat treatment at 1500 degrees C for 3 h or at 1550 degrees C for 1 h. The crystallization process starts at the surface of the amorphous particle: while the outer regions of the particle become crystalline, the inner part remains amorphous. The re-arrangement of the Si and N atoms on the surface of the amorphous particle leads to the formation of hexagonal crystals that are separated from the host amorphous particle. The particle size and size distribution can be controlled by varying the heat-treatment profile (namely, the heat-treatment temperature, heating rate, and heating duration at the specified temperature), which can be used to control the relative extent of the nucleation and growth. The completion of most of the nucleation process by lowering the heat-up rate can be used to achieve a singlet particle size distribution. Bimodal particle size distribution can be achieved by fast heat-up during the crystallization process. PMID:27483939

  3. Preparation and stress evolution of sol-gel SiO2 antireflective coatings for small-size anisotropic lithium triborate crystals

    NASA Astrophysics Data System (ADS)

    Tian, Bingtao; Wang, Xiaodong; Niu, Yanyan; Zhang, Jinlong; Zhang, Qinghua; Zhang, Zhihua; Wu, Guangming; Zhou, Bin; Shen, Jun

    2016-04-01

    Lithium triborate (LiB3O5, LBO) crystal is now one of the most useful nonlinear optical materials for frequency conversion of high power lasers. The use of the crystal, however, has been hampered by the unavailability of antireflective (AR) coatings with high laser damage resistance. In this work, a "point contact" dip-coating method is developed to prepare sol-gel SiO2 AR coatings on small-size LBO crystals. Using this approach, we obtain a homogenous coating surface on an 8 mm×8 mm×3 mm LBO crystal. The stress measurements show that the stresses in sol-gel SiO2 coatings vary with the time of natural drying, which is beyond our expectation. The anisotropic Young's modulus of the LBO crystal and the different evolution tendency of the stress in the different SiO2 coating layers are found to be responsible for the crack of the double-layer AR coatings on anisotropic LBO crystal. Meanwhile, the resulting coatings on LBO crystal achieve a LIDT of over 15 J/cm2 (532 nm, 3ns) and the coated LBO is expected to have a transmittance of over 99% at 800 nm.

  4. Thomson Scattering Measurements on HIT-SI3

    NASA Astrophysics Data System (ADS)

    Everson, C. J.; Morgan, K. D.; Jarboe, T. R.

    2015-11-01

    A multi-point Thomson Scattering diagnostic has been implemented on HIT-SI3 (Helicity Injected Torus - Steady Inductive 3) to measure electron temperature. The HIT-SI3 experiment is a modification of the original HIT-SI apparatus that uses three injectors instead of two. This modification alters the configuration of magnetic fields and thus the plasma behavior in the device. The scientific aim of HIT-SI3 is to develop a deeper understanding of how injector behavior and interactions influence current drive and plasma performance in the spheromak. The Thomson Scattering system includes a 20 J (1 GW pulse) Ruby laser that provides the incident beam, and collection optics that are installed such that measurements can be taken at four spatial locations in HIT-SI3 plasmas. For each measurement point, a 3-channel polychromator is used to detect the relative level of scattering. These measurements allow for the presence of temperature gradients in the spheromak to be investigated. Preliminary HIT-SI3 temperature data are presented and can be compared to predictions from computational models. Work supported by the D.O.E.

  5. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  6. Thermal Diffusivity Measurement for p-Si and Ag/p-Si by Photoacoustic Technique

    NASA Astrophysics Data System (ADS)

    Hussein, Mohammed Jabbar; Yunus, W. Mahmood Mat; Kamari, Halimah Mohamed; Zakaria, Azmi

    2015-10-01

    Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using open photoacoustic cell (OPC). The samples were annealed by heating them at 960, 1050, 1200, and 1300 °C for 3 h in air. The thermal diffusivity of Ag-coated samples was obtained by fitting the photoacoustic experimental data to the thermally thick equation for Rosencwaig and Gersho (RG) theory. For the single layer samples, the thermal diffusivity can be obtained by fitting as well as by obtaining the critical frequency f c . In this study, the thermal diffusivity of the p-Si samples increased with increasing the annealing temperature. The thermal diffusivity of the Ag/p-Si samples, after reaching the maximum value of about 2.73 cm2/s at a temperature of 1200 °C, decreased due to the silver complete melt in the surface of the silicon.

  7. Time of flight measurements based on FPGA and SiPMs for PET-MR

    NASA Astrophysics Data System (ADS)

    Aguilar, Albert; García-Olcina, Raimundo; Martínez, Pedro A.; Martos, Julio; Soret, Jesús; Torres, José; Benlloch, José M.; González, Antonio J.; Sánchez, Filomeno

    2014-01-01

    Coincidence time measurements with SiPMs have shown to be suitable for PET/MR systems. The present study is based on 3×3 mm2 SiPMs, LSO crystals and a conditioning signal electronic circuit. A Constant Fraction Discriminator (CFD) is used to digitalize the signals and a TDC FPGA-implemented is employed for fine time measurements. TDC capability allows processing the arrival of multiple events simultaneously, measuring times under 100 ps. The complete set-up for time measurements results on a resolution of 892±41 ps for a pair of detectors. The details of such implementation are exposed and the trade-offs of each configuration are discussed.

  8. Crystal structure and physical properties of the novel ternary intermetallics URuSi{sub 3-x} and U{sub 3}Ru{sub 2}Si{sub 7}

    SciTech Connect

    Pasturel, M.; Pikul, A.P.; Potel, M.; Roisnel, T.; Tougait, O.; Noel, H.; Kaczorowski, D.

    2010-08-15

    Two novel ternary intermediate phases, namely URuSi{sub 3-x} (x=0.11) and U{sub 3}Ru{sub 2}Si{sub 7} were found in the Si-rich part of the U-Ru-Si phase diagram. Single crystal X-ray diffraction measurements, carried out at room temperature, indicated that URuSi{sub 3-x} crystallizes in its own tetragonal type structure (space group P4/nmm, no. 129; unit cell parameters: a=12.108(1) A and c=9.810(1) A), being a derivative of the BaNiSn{sub 3}-type structure. U{sub 3}Ru{sub 2}Si{sub 7} adopts in turn a disordered orthorhombic La{sub 3}Co{sub 2}Sn{sub 7}-type structure (space group Cmmm, no. 65; unit cell parameters: a=4.063(1) A, b=24.972(2) A and c=4.072(1) A). As revealed by magnetization, electrical resistivity and specific heat measurements, both compounds order magnetically at low temperatures. Namely URuSi{sub 3-x} is a ferromagnet with T{sub C}=45 K, and U{sub 3}Ru{sub 2}Si{sub 7} shows ferrimagnetic behavior below T{sub C}=29 K. - Graphical abstract: Thermal dependence of the specific heat of the novel intermetallics URuSi{sub 3} and U{sub 3}Ru{sub 2}Si{sub 7}. The arrows mark temperatures of ferro- or ferrimagnetic phase transitions.

  9. Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC.

    PubMed

    Bracher, David O; Hu, Evelyn L

    2015-09-01

    Silicon carbide (SiC) is an intriguing material due to the presence of spin-active point defects in several polytypes, including 4H-SiC. For many quantum information and sensing applications involving such point defects, it is important to couple their emission to high quality optical cavities. Here we present the fabrication of 1D nanobeam photonic crystal cavities (PCC) in 4H-SiC using a dopant-selective etch to undercut a homoepitaxially grown epilayer of p-type 4H-SiC. These are the first PCCs demonstrated in 4H-SiC and show high quality factors (Q) of up to ∼7000 as well as low modal volumes of <0.5 (λ/n)(3). We take advantage of the high device yield of this fabrication method to characterize hundreds of devices and determine which PCC geometries are optimal. Additionally, we demonstrate two methods to tune the resonant wavelengths of the PCCs over 5 nm without significant degradation of the Q. Lastly, we characterize nanobeam PCCs coupled to luminescence from silicon vacancy point defects (V1, V2) in 4H-SiC. The fundamental modes of two such PCCs are tuned into spectral overlap with the zero phonon line (ZPL) of the V2 center, resulting in an intensity increase of up to 3-fold. These results are important steps on the path to developing 4H-SiC as a platform for quantum information and sensing.

  10. Structural characterization of Lu{sub 1.8}Y{sub 0.2}SiO{sub 5} crystals

    SciTech Connect

    Chiriu, Daniele; Faedda, Nicola; Lehmann, Alessandra Geddo; Ricci, Pier Carlo; Anedda, Alberto; Desgreniers, Serge; Fortin, Emery

    2007-08-01

    The structural and vibrational properties of Lu{sub 1.8}Y{sub 0.2}SiO{sub 5} (LYSO) single crystals were investigated by means of Raman spectroscopy and x-ray diffraction measurements. Unit cell parameters and bond lengths were determined by Rietveld refinement of the collected x-ray diffraction powder spectra. By comparison with the vibrational spectra of the parent compounds Lu{sub 2}SiO{sub 5} and Y{sub 2}SiO{sub 5} and by using polarized Raman measurements, we propose the assignment of the principal vibrational modes of LYSO crystals. The strict connection of Raman spectra of the LYSO solid solution and of the pure lutetium and yttrium crystals, as well as the analysis of the polarized measurements, confirms that LYSO structure adopts the C2/c space group symmetry. The structural analogies of LYSO with the pure compound Lu{sub 2}SiO{sub 5} are further shown by means of high pressure Raman spectroscopy, and the possibility of considering the LYSO crystal analogous to the LSO structure with a tensile stress between 0.25 and 0.80 GPa is discussed.

  11. Stopped Light at High Storage Efficiency in a Pr3 + :Y2SiO5 Crystal

    NASA Astrophysics Data System (ADS)

    Schraft, Daniel; Hain, Marcel; Lorenz, Nikolaus; Halfmann, Thomas

    2016-02-01

    We demonstrate efficient storage and retrieval of light pulses by electromagnetically induced transparency (EIT) in a Pr3 +:Y2SiO5 crystal. Using a ring-type multipass configuration, we increase the optical depth (OD) of the medium up to a factor of 16 towards OD ≈96 . Combining the large optical depth with optimized conditions for EIT, we reach a light storage efficiency of (76.3 ±3.5 )% . In addition, we perform extended systematic measurements of the storage efficiency versus optical depth, control Rabi frequency, and probe pulse duration. The data confirm the theoretically expected behavior of an EIT-driven solid-state memory.

  12. Detection of high energy muons with sub-20 ps timing resolution using L(Y)SO crystals and SiPM readout

    NASA Astrophysics Data System (ADS)

    Benaglia, A.; Gundacker, S.; Lecoq, P.; Lucchini, M. T.; Para, A.; Pauwels, K.; Auffray, E.

    2016-09-01

    Precise timing capability will be a key aspect of particle detectors at future high energy colliders, as the time information can help in the reconstruction of physics events at the high collision rate expected there. Other than being used in detectors for PET, fast scintillating crystals coupled to compact Silicon Photomultipliers (SiPMs) constitute a versatile system that can be exploited to realize an ad-hoc timing device to be hosted in a larger high energy physics detector. In this paper, we present the timing performance of LYSO:Ce and LSO:Ce codoped 0.4% Ca crystals coupled to SiPMs, as measured with 150 GeV muons at the CERN SPS H2 extraction line. Small crystals, with lengths ranging from 5 mm up to 30 mm and transverse size of 2 × 2mm2 or 3 × 3mm2 , were exposed to a 150 GeV muon beam. SiPMs from two different companies (Hamamatsu and FBK) were used to detect the light produced in the crystals. The best coincidence time resolution value of (14.5 ± 0.5) ps , corresponding to a single-detector time resolution of about 10 ps, is demonstrated for 5 mm long LSO:Ce,Ca crystals coupled to FBK SiPMs, when time walk corrections are applied.

  13. Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

    PubMed

    Liu, Yu; Wang, Gang; Wang, Shunchong; Yang, Jianhui; Chen, Liang; Qin, Xiubo; Song, Bo; Wang, Baoyi; Chen, Xiaolong

    2011-02-25

    Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.

  14. Measurement of Young's modulus and residual stress of thin SiC layers for MEMS high temperature applications

    NASA Astrophysics Data System (ADS)

    Pabst, Oliver; Schiffer, Michael; Obermeier, Ernst; Tekin, Tolga; Lang, Klaus Dieter; Ngo, Ha-Duong

    2011-06-01

    Silicon carbide (SiC) is a promising material for applications in harsh environments. Standard silicon (Si) microelectromechanical systems (MEMS) are limited in operating temperature to temperatures below 130 °C for electronic devices and below 600 °C for mechanical devices. Due to its large bandgap SiC enables MEMS with significantly higher operating temperatures. Furthermore, SiC exhibits high chemical stability and thermal conductivity. Young's modulus and residual stress are important mechanical properties for the design of sophisticated SiC-based MEMS devices. In particular, residual stresses are strongly dependent on the deposition conditions. Literature values for Young's modulus range from 100 to 400 GPa, and residual stresses range from 98 to 486 MPa. In this paper we present our work on investigating Young's modulus and residual stress of SiC films deposited on single crystal bulk silicon using bulge testing. This method is based on measurement of pressure-dependent membrane deflection. Polycrystalline as well as single crystal cubic silicon carbide samples are studied. For the samples tested, average Young's modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples, the according values are 388 GPa and 217 MPa. These results compare well with literature values.

  15. Crystal and magnetic structure of the R15Si9C compounds (R = Ho, Er, Tb)

    NASA Astrophysics Data System (ADS)

    Ritter, C.; Wrubl, F.; Hill, A. H.; Pani, M.; Manfrinetti, P.

    2011-07-01

    The synthesis of the new compounds R15Si9C with R = Sm, Gd-Er, Y and R15Ge9C with R = Ce, Pr and Nd has been recently reported; these compounds crystallize in the hexagonal La15Ge9Fe structure type, hP50-P63mc, Z = 2 (ordered superstructure of La5Ge3 (Mn5Si3-type, hP 16-P63/mcm, Z = 2)). Here we report the results of a neutron diffraction investigation that we have performed to study the crystal and magnetic structures of the R15Si9C compounds with R = Tb, Ho and Er. All three compounds see the establishment of commensurate magnetic order with a predominantly ferromagnetic interaction. Details of mixed antiferro-ferromagnetic spin arrangements (κ = [000]) (for Tb15Si9C and Ho15Si9C) or of purely ferromagnetic ordering (Er15Si9C), and of their temperature dependence, are given and linked to the different coordination of the four dissimilar rare earth sites. In the Tb and Ho compounds the thermal evolution of the magnetic moment values strongly differs between the different R sites. The position occupied by the principal carbon has been determined (Wyckoff site 2b) and the existence of a second position available for the interstitial carbon (Wyckoff site 2a) has been revealed for R = Ho, Tb. Moreover, in the Tb and Ho compounds the magnetic moment value of the rare earth site R4, surrounding the second interstitial carbon site, is strongly reduced if compared to the value on the other rare earth sites. The magnetic transition temperatures of all three compounds, i.e. TC = 130, 43 and 45 K for Tb15Si9C, Ho15Si9C and Er15Si9C, are remarkably high compared to those of the parent R5Si3 compounds. The magnetic behaviour of the partly filled Tb5Si3C0.25 is reported.

  16. Room-temperature light emission from an airbridge double-heterostructure microcavity of Er-doped Si photonic crystal

    NASA Astrophysics Data System (ADS)

    Wang, Yue; An, Jun-ming; Wu, Yuan-da; Hu, Xiong-wei

    2016-01-01

    We experimentally demonstrate an efficient enhancement of luminescence from two-dimensional (2D) hexagonal photonic crystal (PC) airbridge double-heterostructure microcavity with Er-doped silicon (Si) as light emitters on siliconon-insulator (SOI) wafer at room temperature. A single sharp resonant peak at 1 529.6 nm dominates the photoluminescence (PL) spectrum with the pumping power of 12.5 mW. The obvious red shift and the degraded quality factor (Q-factor) of resonant peak appear with the pumping power increasing, and the maximum measured Q-factor of 4 905 is achieved at the pumping power of 1.5 mW. The resonant peak is observed to shift depending on the structural parameters of PC, which indicates a possible method to control the wavelength of enhanced luminescence for Si-based light emitters based on PC microcavity.

  17. Photonic crystals with SiO2-Ag ``post-cap'' nanostructure coatings for surface enhanced Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Kim, Seok-min; Zhang, Wei; Cunningham, Brian T.

    2008-10-01

    We demonstrate that the resonant near fields of a large-area replica molded photonic crystal (PC) slab can efficiently couple light from a laser to SiO2-Ag "post-cap" nanostructures deposited on the PC surface by a glancing angle evaporation technique for achieving high surface enhanced Raman spectroscopy (SERS) enhancement factor. To examine the feasibility of the PC-SERS substrate, the simulated electric field around individual Ag particles and the measured Raman spectrum of trans-1,2-bis(4pyridyl)ethane on the PC-SERS substrate were compared with those from an ordinary glass substrate coated with the same SiO2-Ag nanostructures.

  18. One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

    SciTech Connect

    Liu, Ziheng Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A.

    2014-02-03

    In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.

  19. Smart dust: self-assembling, self-orienting photonic crystals of porous Si.

    PubMed

    Link, Jamie R; Sailor, Michael J

    2003-09-16

    Micrometer-sized one-dimensional photonic crystals of porous Si that spontaneously assemble, orient, and sense their local environment are prepared. The photonic crystals are generated by electrochemically etching two discrete porous multilayered dielectric mirrors into Si, one on top of the other. The first mirror is chemically modified by hydrosilylation with dodecene before the etching of the second mirror, which is prepared with an optical reflectivity spectrum that is distinct from the first. The entire film is removed from the substrate, and the second mirror is then selectively modified by mild thermal oxidation. The films are subsequently fractured into small particles by sonication. The chemically asymmetric particles spontaneously align at an organic liquid-water interface, with the hydrophobic side oriented toward the organic phase and the hydrophilic side toward the water. Sensing is accomplished when liquid at the interface infuses into the porous mirrors, inducing predictable shifts in the optical spectra of both mirrors. PMID:12947036

  20. Preparation and crystal structure of the semiconducting compound Sn 4.2Si 9P 16

    NASA Astrophysics Data System (ADS)

    Pivan, Jean-Yves; Guerin, Roland; Padiou, Jean; Sergent, Marcel

    1988-09-01

    The phosphide Sn 4.2Si 9P 16 has been grown as single crystals using tin as a flux. The unit cell is rhombohedral, space group R3, with a = 9.504(2) Å, α = 111.00(2)°, and Z = 1. The X-ray structure was solved from three-dimensional single-crystal counter data and refined down the final R indices 0.027 and 0.033 for 854 independent reflections. It consists of |SiP 4| tetrahedra linked together by common apices which generate a tridimensional framework into which tin atoms, in a distorted tetrahedral phosphorus coordination, are inserted. This new compound was found to be semiconducting with a band gap of 0.2 eV.

  1. Magnetostrictive behaviors of Fe-Si(001) single-crystal films under rotating magnetic fields

    NASA Astrophysics Data System (ADS)

    Kawai, Tetsuroh; Aida, Takuya; Ohtake, Mitsuru; Futamoto, Masaaki

    2015-05-01

    Magnetostrictive behaviors under rotating magnetic fields are investigated for bcc(001) single-crystal films of Fe100-x-Six(x = 0, 6, 10 at. %). The magnetostriction observation directions are along bcc[100] and bcc[110] of the films. The magnetostriction waveform varies greatly depending on the observation direction. For the observation along [100], the magnetostriction waveform of all the films is bathtub-like and the amplitude stays at almost constant even when the magnetic field is increased up to the anisotropy field. On the other hand, the waveform along [110] is triangular and the amplitude increases with increasing magnetic field up to the anisotropy field and then saturates. In addition, the waveform of Fe90Si10 film is distorted triangular when the applied magnetic fields are less than its anisotropy field. These magnetostrictive behaviors under rotating magnetic fields are well explained by employing a proposed modified coherent rotation model where the anisotropy field and the magnetization reversal field are determined by using measured magnetization curves. The results show that magnetocrystalline anisotropy plays important role on magnetostrictive behavior under rotating magnetic fields.

  2. Trap and track: designing self-reporting porous Si photonic crystals for rapid bacteria detection.

    PubMed

    Massad-Ivanir, Naama; Mirsky, Yossi; Nahor, Amit; Edrei, Eitan; Bonanno-Young, Lisa M; Ben Dov, Nadav; Sa'ar, Amir; Segal, Ester

    2014-08-21

    The task of rapid detection and identification of bacteria remains a major challenge in both medicine and industry. This work introduces a new concept for the design of self-reporting optical structures that can detect and quantify bacteria in real-time. The sensor is based on a two-dimensional periodic structure of porous Si photonic crystals in which the pore size is adjusted to fit the target bacteria cells (Escherichia coli). Spontaneous bacteria capture within the pores induces measurable changes in the zero-order reflectivity spectrum collected from the periodic structure. Confocal laser microscopy and electron microscopy confirm that the Escherichia coli cells are individually imprisoned within the porous array. A simple model is suggested to correlate the optical readout and the bacteria concentration and its predictions are found to be in good agreement with experimental results. In addition, we demonstrate that sensing scheme can be easily modified to potentially allow monitoring of concentration, growth and physiological state of bacteria cells. This generic platform can be tailored to target different microorganisms by tuning the array periodicity and its surface chemistry for rapid and label-free detection outside the laboratory environment.

  3. Si{sub 3}N{sub 4} optomechanical crystals in the resolved-sideband regime

    SciTech Connect

    Davanço, M.; Ates, S.; Liu, Y.; Srinivasan, K.

    2014-01-27

    We demonstrate sideband-resolved Si{sub 3}N{sub 4} optomechanical crystals supporting 10{sup 5} quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers in excess of 10{sup 4}.

  4. From polymer to monomer: cleavage and rearrangement of Si-O-Si bonds after oxidation yielded an ordered cyclic crystallized structure.

    PubMed

    Zuo, Yujing; Gou, Zhiming; Cao, Jinfeng; Yang, Zhou; Lu, Haifeng; Feng, Shengyu

    2015-07-27

    Polymerization reactions are very common in the chemical industry, however, the reaction in which monomers are obtained from polymers is rarely invesitgated. This work reveals for the first time that oxone can break the Si-O-Si bond and induce further rearrangement to yield an ordered cyclic structure. The oxidation of P1, which is obtained by reaction of 2,2'-1,2-ethanediylbis(oxy)bis(ethanethiol) (DBOET) with 1,3-divinyl-1,1,3,3-tetramethyldisiloxane (MM(Vi)), with oxone yielded cyclic crystallized sulfone-siloxane dimer (P1-ox) after unexpected cleavage and rearrangement of the Si-O-Si bond.

  5. Single-crystal X-ray diffraction study of Fe2SiO4 fayalite up to 31 GPa

    NASA Astrophysics Data System (ADS)

    Zhang, Jin S.; Hu, Yi; Shelton, Hannah; Kung, Jennifer; Dera, Przemyslaw

    2016-10-01

    Olivine is widely believed to be the most abundant mineral in the Earth's upper mantle. Here, we report structural refinement results for the Fe-end-member olivine, Fe2SiO4 fayalite, up to 31 GPa in diamond-anvil cell, using single-crystal synchrotron X-ray diffraction. Unit-cell parameters a, b, c and V, average Si-O Fe-O bond lengths, as well as Si-O Fe-O polyhedral volumes continuously decrease with increasing pressure. The pressure derivative of isothermal bulk modulus K_{T0}^' } is determined to be 4.0 (2) using third-order Birch-Murnaghan equation of state with ambient isothermal bulk modulus fixed to 135 GPa on the basis of previous Brillouin measurements. The Si-O tetrahedron is stiffer than the Fe-O octahedra, and the compression mechanism is dominated by Fe-O bond and Fe-O octahedral compression. Densities of olivine along 1600 and 900 K adiabats are calculated based on this study. The existence of metastable olivine inside the cold subduction slab could cause large positive buoyancy force against subduction, slow down the subduction and possibly affect the slab geometry.

  6. Crystal structure and electronic properties of the new compounds, U 6Fe 16Si 7 and its interstitial carbide U 6Fe 16Si 7C

    NASA Astrophysics Data System (ADS)

    Berthebaud, D.; Tougait, O.; Potel, M.; Lopes, E. B.; Gonçalves, A. P.; Noël, H.

    2007-10-01

    The new compounds U6Fe16Si7 and U6Fe16Si7C were prepared by arc-melting and subsequent annealing at 1500 °C. Single-crystal X-ray diffraction showed that they crystallize in the cubic space group Fm3¯m (No. 225), with unit-cell parameters at room temperature a=11.7206(5) Å for U6Fe16Si7 and a=11.7814(2) Å for U6Fe16Si7C. Their crystal structures correspond to ordered variants of the Th6Mn23 type. U6Fe16Si7 adopts the Mg6Cu16Si7 structure type, whereas U6Fe16Si7C crystallizes with a novel "filled" quaternary variant. The inserted carbon is located in octahedral cages formed by six U atoms, with U-U interatomic distances of 3.509(1) Å. Insertion of carbon in the structure of U6Fe16Si7 has a direct influence on the U-Fe and Fe-Fe interatomic distances. The electronic properties of both compounds were investigated by means of DC susceptibility, electrical resistivity and thermopower. U6Fe16Si7 is a Pauli paramagnet. Its electrical resistivity and thermopower point out that it cannot be classified as a simple metal. The magnetic susceptibility of U 6Fe 16Si 7C is best described over the temperature range 100-300 K by using a modified Curie-Weiss law with an effective magnetic moment of 2.3(2) μB/U, a paramagnetic Weiss temperature, θp=57(2) K and a temperature-independent term χ0=0.057(1) emu/mol. Both the electrical resistivity and thermopower reveal metallic behavior.

  7. Crystallization of Na2O-SiO2 gel and glass

    NASA Technical Reports Server (NTRS)

    Neilson, G. F.; Weinberg, M. C.

    1984-01-01

    The crystallization behavior of a 19 wt pct soda silica gel and gel-derived glass was compared to that of the ordinary glass of the same composition. Both bulk and ground glass samples were utilized. X-ray diffraction measurements were made to identify the crystalline phases and gauge the extent of crystallization. It was found that the gel crystallized in a distinctive manner, while the gel glass behavior was not qualitatively different from that of the ordinary glass.

  8. Crystallization and characterization of Y2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III; Lee, William E.; Sanders, W. A.; Kiser, J. D.

    1991-01-01

    Glasses in the yttria-silica system with 20 to 40 mol pct Y2O3 were subjected to recrystallization studies after melting at 1900 to 2100 C in W crucibles in 1 and 50 atm N2. The TEM and XRD results obtained indicate the presence of the delta, gamma, gamma prime, and beta-Y2Si2O7 crystalline phases, depending on melting and quenching conditions. Heat treatment in air at 1100 to 1600 C increased the amount of crystallization, and led to the formation of Y2SiO5, cristabalite, and polymorphs of Y2Si2O7. Also investigated were the effects of 5 and 10 wt pct zirconia additions.

  9. Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Pedesseau, L.; Even, J.; Modreanu, M.; Chaussende, D.; Sarigiannidou, E.; Chaix-Pluchery, O.; Durand, O.

    2015-12-01

    New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4). A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al4SiC4 material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al4SiC4 material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.

  10. Measurements of Protein Crystal Face Growth Rates

    NASA Technical Reports Server (NTRS)

    Gorti, S.

    2014-01-01

    Protein crystal growth rates will be determined for several hyperthermophile proteins.; The growth rates will be assessed using available theoretical models, including kinetic roughening.; If/when kinetic roughening supersaturations are established, determinations of protein crystal quality over a range of supersaturations will also be assessed.; The results of our ground based effort may well address the existence of a correlation between fundamental growth mechanisms and protein crystal quality.

  11. High-pressure synthesis and crystal structure of silicon phosphate hydroxide, SiPO 4(OH)

    NASA Astrophysics Data System (ADS)

    Stearns, Linda A.; Groy, Thomas L.; Leinenweber, Kurt

    2005-09-01

    A new high-pressure phase, silicon phosphate hydroxide, was prepared at 8.3±0.5 GPa and 1000 °C in >98% purity. From X-ray diffraction on a pseudo-merohedrally twinned crystal, it was found that SiPO 4(OH) crystallizes in a monoclinic cell with space group P21/n (No. 14), a=6.8446(11) Å, b=6.8683(13) Å, c=6.8446(11) Å, β=119.77(1)∘, and Z=4. The refinement gave a conventional Robs of 0.0320 and wRobs of 0.0864 for the overlapped data from both twin components. In the structure, SiO 6 octahedra form chains along [101], with PO 4 tetrahedra alternating along the chain in the b-direction. The parallel chains link up with tetrahedral corners from other chains to form a 3-dimensional network. SiPO 4(OH) belongs to a structural family that includes HgSeO4·H2O. It is also related to the SbOPO 4 structure by a small distortion that lowers the symmetry from C2/c in SbOPO 4 to P21/c (P21/n) in SiPO 4(OH).

  12. Spin measurement in an undoped Si/SiGe double quantum dot incorporating a micromagnet

    NASA Astrophysics Data System (ADS)

    Wu, Xian; Prance, Jonathan; Ward, Daniel; Gamble, John; Savage, Donald; Lagally, Max; Friesen, Mark; Coppersmith, Susan; Eriksson, Mark

    2013-03-01

    We present recent measurements on a double dot formed in an accumulation mode undoped Si/SiGe heterostructure. The double dot incorporates a proximal micromagnet to generate a stable magnetic field difference between the quantum dots. By measuring the ground state and excited state spectrum of this double dot as a function of in-plane magnetic field we identify the (1,1) and (2,0) charge degeneracy point. Using single-shot readout we measure transitions between the (2,0) singlet and the (1,1) triplet states. This method enables the identification of the crossing as a function of detuning between the (1,1) triplet states (both the first and second excited states) and the (2,0) singlet state. We also present data showing that this undoped device has good charge stability and can be measured with high frequency (up to 500MHz) voltage pulses. Now work at Lancaster University

  13. Comparison of the quantum and classical calculations of flux density of (220) channeled positrons in Si crystal

    NASA Astrophysics Data System (ADS)

    Korotchenko, K. B.; Tukhfatullin, TA; Pivovarov, Yu L.; Eikhorn, Yu L.

    2016-07-01

    Simulation of flux-peaking effect of the 255 MeV positrons channeled in (220) Si crystals is performed in the frame of classical and quantum mechanics. Comparison of the results obtained using both approaches shows relatively good agreement.

  14. Synthesis and crystal structure of Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} containing [Si{sub 2}] dumbbells

    SciTech Connect

    Takayuki, Hashimoto; Yamane, Hisanori; Becker, Nils; Dronskowski, Richard

    2015-10-15

    Black, metallic luster, platelet single crystals of Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} were grown on a BN crucible wall by slowly cooling from 900 °C to 27 °C. X-ray diffraction analysis revealed that Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} crystallizes in an orthorhombic cell (a=17.6942(4) Å, b=34.1437(6) Å, c=10.0410(2) Å; space group Fdd2). Isolated nitridoborate anionic groups [BN{sub 2}]{sup 3–}, dumbbell-type Zintl polyanions [Si{sub 2}]{sup 2.8–}, and nitride anions N{sup 3–} are included in the structure. The structural formula is represented as (Ba{sup 2+}){sub 26}([BN{sub 2}]{sup 3–}){sub 12}[([Si{sub 2}]{sup 2.8–}){sub 1.25}(N{sup 3–}){sub 2×0.75}]{sub 2}. The [Si{sub 2}]{sup 2.8–} dumbbell with a Si–Si length of 2.177(5) Å has a bond order of 2.6, which is close to the triple bond of Si. - Graphical abstract: Single crystals of Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27} grown by slow cooling from 900 °C have an orthorhombic crystal structure with space group Fdd2, containing nitridoborate anionic groups [BN{sub 2}]{sup 3–}, dumbbell-type Zintl polyanions [Si{sub 2}]{sup 2.8–}, and nitride anions N{sup 3–}. - Highlights: • A novel compound, Ba{sub 26}B{sub 12}Si{sub 5}N{sub 27}, was synthesized by slow cooling from 900 °C. • Single crystal X-ray diffraction clarified a new crystal structure. • Anionic groups [BN{sub 2}]{sup 3–} and dumbbell-type Zintl polyanions [Si{sub 2}]{sup 2.8–} are contained. • The [Si{sub 2}]{sup 2.8–} dumbbell has a bond order of 2.6, which is close to the triple bond.

  15. A Linear Single-Crystal Bragg-Fresnel Lens With SiO2 Surface Structure

    SciTech Connect

    Kuznetsov, S.; Yunkin, V.; Drakopoulos, M.; Snigireva, I.; Snigirev, A.

    2004-05-12

    Bragg-Fresnel lens (BFL) as thin silicon dioxide strips grown on the surface of perfect silicon crystal was designed, manufactured and experimentally tested. In this case the BFL structure consists of a set of silicon dioxide rectangular shape etched zones arranged by the Fresnel zone law. The stress within coated and uncoated crystal regions is opposite in sign, whether tensile or compressive. The strain in the substrate crystal lattice directly underneath discontinuities in the deposited film give rise to phase difference between waves diffracted from coated and uncoated crystal regions. This phase difference is known to be dependent on the thickness and composition of film and substrate. The focusing properties of Si/SiO2 BFLs with 107 zones and 0.3 micrometer outermost zone width were experimentally studied as a function of the silicon oxide thickness in the range of 100 - 400 nanometers. It was shown that deformation Bragg-Fresnel lenses could effectively focus hard X-rays to a linear focal spot of about 2 microns. The efficiency of focusing was found to be about 16% at energy 10 keV. The developed lens design is a promising approach to extend the angular range of focusing by Bragg-Fresnel optical elements and to avoid some drawbacks of BFL properties related to aspect-ratio dependent etching.

  16. Spectral broadening induced by intense ultra-short pulse in 4H-SiC crystals

    NASA Astrophysics Data System (ADS)

    Chun-hua, Xu; Teng-fei, Yan; Gang, Wang; Wen-jun, Wang; Jing-kui, Liang; Xiao-long, Chen

    2016-06-01

    We report the observation of spectral broadening induced by 200 femtosecond laser pulses with the repetition rate of 1 kHz at the wavelength of 532 nm in semi-insulating 4H-SiC single crystals. It is demonstrated that the full width at half maximum of output spectrum increases linearly with the light propagation length and the peak power density, reaching a maximum 870 cm-1 on a crystal of 19 mm long under an incident laser with a peak power density of 60.1 GW/cm2. Such spectral broadening can be well explained by the self-phase modulation model which correlates time-dependent phase change of pulses to intensity-dependent refractive index. The nonlinear refractive index n 2 is estimated to be 1.88×10-15 cm2/W. The intensity-dependent refractive index is probably due to both the nonlinear optical polarizability of the bound electrons and the increase of free electrons induced by the two-photon absorption process. Super continuum spectra could arise as crystals are long enough to induce the self-focusing effect. The results show that SiC crystals may find applications in spectral broadening of high power lasers. Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA041402) and the National Natural Science Foundation of China (Grant Nos. 51272276 and 51322211).

  17. Spectral broadening induced by intense ultra-short pulse in 4H–SiC crystals

    NASA Astrophysics Data System (ADS)

    Chun-hua, Xu; Teng-fei, Yan; Gang, Wang; Wen-jun, Wang; Jing-kui, Liang; Xiao-long, Chen

    2016-06-01

    We report the observation of spectral broadening induced by 200 femtosecond laser pulses with the repetition rate of 1 kHz at the wavelength of 532 nm in semi-insulating 4H–SiC single crystals. It is demonstrated that the full width at half maximum of output spectrum increases linearly with the light propagation length and the peak power density, reaching a maximum 870 cm‑1 on a crystal of 19 mm long under an incident laser with a peak power density of 60.1 GW/cm2. Such spectral broadening can be well explained by the self-phase modulation model which correlates time-dependent phase change of pulses to intensity-dependent refractive index. The nonlinear refractive index n 2 is estimated to be 1.88×10‑15 cm2/W. The intensity-dependent refractive index is probably due to both the nonlinear optical polarizability of the bound electrons and the increase of free electrons induced by the two-photon absorption process. Super continuum spectra could arise as crystals are long enough to induce the self-focusing effect. The results show that SiC crystals may find applications in spectral broadening of high power lasers. Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA041402) and the National Natural Science Foundation of China (Grant Nos. 51272276 and 51322211).

  18. Single-crystal structure determination of (Mg,Fe)SiO3 postperovskite.

    PubMed

    Zhang, Li; Meng, Yue; Dera, Przemyslaw; Yang, Wenge; Mao, Wendy L; Mao, Ho-Kwang

    2013-04-16

    Knowledge of the structural properties of mantle phases is critical for understanding the enigmatic seismic features observed in the Earth's lower mantle down to the core-mantle boundary. However, our knowledge of lower mantle phase equilibria at high pressure (P) and temperature (T) conditions has been based on limited information provided by powder X-ray diffraction technique and theoretical calculations. Here, we report the in situ single-crystal structure determination of (Mg,Fe)SiO3 postperovskite (ppv) at high P and after temperature quenching in a diamond anvil cell. Using a newly developed multigrain single-crystal X-ray diffraction analysis technique in a diamond anvil cell, crystallographic orientations of over 100 crystallites were simultaneously determined at high P in a coarse-grained polycrystalline sample containing submicron ppv grains. Conventional single-crystal structural analysis and refinement methods were applied for a few selected ppv crystallites, which demonstrate the feasibility of the in situ study of crystal structures of submicron crystallites in a multiphase polycrystalline sample contained within a high P device. The similarity of structural models for single-crystal Fe-bearing ppv (~10 mol% Fe) and Fe-free ppv from previous theoretical calculations suggests that the Fe content in the mantle has a negligible effect on the crystal structure of the ppv phase.

  19. Characterization of stacked-crystal PET detector designs for measurement of both TOF and DOI.

    PubMed

    Schmall, Jeffrey P; Surti, Suleman; Karp, Joel S

    2015-05-01

    A PET detector with good timing resolution and two-level depth-of-interaction (DOI) discrimination can be constructed using a single-ended readout of scintillator stacks of Lanthanum Bromide (LaBr3), with various Cerium dopant concentrations, including pure Cerium Bromide (CeBr3). The stacked crystal geometry creates a unique signal shape for interactions occurring in each layer, which can be used to identify the DOI, while retaining the inherently good timing properties of LaBr3 and CeBr3. In this work, single pixel elements are used to optimize the choice of scintillator, coupling of layers, and type of photodetector, evaluating the performance using a fast, single-channel photomultiplier tube (PMT) and a single 4 × 4 mm(2) silicon photomultiplier (SiPM). We also introduce a method to quantify and evaluate the DOI discrimination accuracy. From signal shape measurements using fast waveform sampling, we found that in addition to differences in signal rise times, between crystal layers, there were also differences in the signal fall times. A DOI accuracy of 98% was achieved using our classification method for a stacked crystal pair, consisting of a 15 mm long LaBr3(Ce:20%) crystal on top of a 15 mm long CeBr3 crystal, readout using a PMT. A DOI accuracy of 95% was measured with a stack of two, identical, 12 mm long, CeBr3 crystals. The DOI accuracy of this crystal pair was reduced to 91% when using a SiPM for readout. For the stack of two, 12 mm long, CeBr3 crystals, a coincidence timing resolution (average of timing results from the top and bottom layer) of 199 ps was measured using a PMT, and this was improved to 153 ps when using a SiPM. These results show that with stacked LaBr3/CeBr3 scintillators and fast waveform sampling nearly perfect DOI accuracy can be achieved with excellent timing resolution-timing resolution that is only minimally degraded compared to results from a single CeBr3 crystal of comparable length to the stacked crystals. The

  20. Dynamic range measurement and calibration of SiPMs

    NASA Astrophysics Data System (ADS)

    Bretz, T.; Hebbeker, T.; Lauscher, M.; Middendorf, L.; Niggemann, T.; Schumacher, J.; Stephan, M.; Bueno, A.; Navas, S.; Ruiz, A. G.

    2016-03-01

    Photosensors have played and will continue to play an important role in high-energy and Astroparticle cutting-edge experiments. As of today, the most common photon detection device in use is the photomultiplier tube (PMT). However, we are witnessing rapid progress in the field and new devices now show very competitive features when compared to PMTs. Among those state-of-the-art photo detectors, silicon photomultipliers (SiPMs) are a relatively new kind of semiconductor whose potential is presently studied by many laboratories. Their characteristics make them a very attractive candidate for future Astroparticle physics experiments recording fluorescence and Cherenkov light, both in the atmosphere and on the ground. Such applications may require the measurement of the light flux on the sensor for the purpose of energy reconstruction. This is a complex task due to the limited dynamic range of SiPMs and the presence of thermal and correlated noise. In this work we study the response of three SiPM types in terms of delivered charge when exposed to light pulses in a broad range of intensities: from single photon to saturation. The influence of the pulse time duration and the SiPM over-voltage on the response are also quantified. Based on the observed behaviour, a method is presented to reconstruct the real number of photons impinging on the SiPM surface directly from the measured SiPM charge. A special emphasis is placed on the description of the methodology and experimental design used to perform the measurements.

  1. Preparation of Si nano-crystals with controlled oxidation state from SiO disproportionated by ZrO2 ball-milling

    NASA Astrophysics Data System (ADS)

    Okamoto, Yuji; Harada, Yoshitomo; Ohta, Narumi; Takada, Kazunori; Sumiya, Masatomo

    2016-09-01

    We demonstrate that a SiO disproportionation reaction can be achieved simply by high energy mechanochemical milling. The planetary ball-milling of ZrO2 for a few minutes generated Si nano-crystals. Milling conditions including rotation speed, ball number, milling time, and type of ball material were able to control the oxidation states of Si. The ball-milled SiO powder was tested as an anode of a lithium battery. ZrO2 contamination from the vial and balls was eliminated by dipping the ball-milled SiO powder in (NH4)HSO4 molten salt and heating for 5 min. The disproportionated SiO powder showed characteristics comparable to those of a powder prepared by a conventional heating process taking several hours.

  2. SU-C-201-01: Investigation of the Effects of Scintillator Surface Treatment On Light Output Measurements with SiPM Detectors

    SciTech Connect

    Valenciaga, Y; Prout, D; Chatziioannou, A

    2015-06-15

    Purpose: To examine the effect of different scintillator surface treatments (BGO crystals) on the fraction of scintillation photons that exit the crystal and reach the photodetector (SiPM). Methods: Positron Emission Tomography is based on the detection of light that exits scintillator crystals, after annihilation photons deposit energy inside these crystals. A considerable fraction of the scintillation light gets trapped or absorbed after going through multiple internal reflections on the interfaces surrounding the crystals. BGO scintillator crystals generate considerably less scintillation light than crystals made of LSO and its variants. Therefore, it is crucial that the small amount of light produced by BGO exits towards the light detector. The surface treatment of scintillator crystals is among the factors affecting the ability of scintillation light to reach the detectors. In this study, we analyze the effect of different crystal surface treatments on the fraction of scintillation light that is detected by the solid state photodetector (SiPM), once energy is deposited inside a BGO crystal. Simulations were performed by a Monte Carlo based software named GATE, and validated by measurements from individual BGO crystals coupled to Philips digital-SiPM sensor (DPC-3200). Results: The results showed an increment in light collection of about 4 percent when only the exit face of the BGO crystal, is unpolished; compared to when all the faces are polished. However, leaving several faces unpolished caused a reduction of at least 10 percent of light output when the interaction occurs as far from the exit face of the crystal as possible compared to when it occurs very close to the exit face. Conclusion: This work demonstrates the advantages on light collection from leaving unpolished the exit face of BGO crystals. The configuration with best light output will be used to obtain flood images from BGO crystal arrays coupled to SiPM sensors.

  3. Searching for the Best Protein Crystals: Synchrotron Based Measurements of Protein Crystal Quality

    NASA Technical Reports Server (NTRS)

    Borgstahl, Gloria; Snell, Edward H.; Bellamy, Henry; Pangborn, Walter; Nelson, Chris; Arvai, Andy; Ohren, Jeff; Pokross, Matt

    1999-01-01

    We are developing X-ray diffraction methods to quantitatively evaluate the quality of protein crystals. The ultimate use for these crystal quality will be to optimize crystal growth and freezing conditions to obtain the best diffraction data. We have combined super fine-phi slicing with highly monochromatic, low divergence synchrotron radiation and the ADSC Quantum 4 CCD detector at the Stanford Synchrotron Radiation laboratory beamline 1.5 to accurately measure crystal mosaicity. Comparisons of microgravity versus earth-grown insulin crystals using these methods will be presented.

  4. Strain measurements of Ge epilayers on Si by Spectroscopic Ellipsometry

    NASA Astrophysics Data System (ADS)

    Ghosh, A.; Fernando, N.; Medina, A. A.; Nelson, C. M.; Zollner, S.; Xu, S. C.; Menendez, J.; Kouvetakis, J.

    2014-03-01

    Using spectroscopic ellipsometry, we determined the strain of a Ge epilayer grown on a Si (100) substrate. This strain depends on the sample temperature and arises because of the difference in thermal expansion coefficients between Si and Ge. It can be calculated since the thermal expansion coefficients of Si and Ge are known very precisely, if we assume that the Ge epilayer was fully relaxed at the growth temperature, leading to an increase in strain as the temperature decreases. We calculate in-plane tensile strain values of 0.12% at 300 K or 0.19% at 77K for our Ge on Si layer, that compares favorably with an in-plane strain of 0.11% derived from shifts of the Ge lattice reflection at 300 K by x-ray diffraction. This temperature-dependent strain affects the energies of the E1 and E1+Delta1 critical points of the Ge epilayer, which can be measured very precisely using spectroscopic ellipsometry from 77 to 800 K.From the difference in the critical point energies between our Ge epilayers on Si and bulk Ge (up to 20 meV), we can calculate the strain from the known elastic constants and deformation potentials. The strain determined from ellipsometry agrees well with the strain calculated from the temperature-dependent thermal expansion coefficient. This work was supported by AFOSR, Award Number FA9550-13-1-0022.

  5. Study of Electron, Phonon and Crystal Stability Versus Thermoelectric Properties in Mg2X(X = Si, Sn) Compounds and Their Alloys

    NASA Astrophysics Data System (ADS)

    Bourgeois, J.; Tobola, J.; Wiendlocha, B.; Chaput, L.; Zwolenski, P.; Berthebaud, D.; Gascoin, F.; Recour, Q.; Scherrer, H.

    2013-10-01

    We present results of extensive theoretical and experimental investigations of Mg2Si and Mg2Sn and their Mg2Si1-xSnx alloys. Electronic and phonon properties of binary compounds were studied by ab initio calculations. Then, both compounds were synthesized by the solid-state reaction and electrical resistivity and thermopower was measured at high temperature (300-900 K). In both the compounds, the theoretical bandgaps (0.56 eV in Mg2Si and 0.16 eV in Mg2Sn) agree very well with the experimental values (0.6 eV in Mg2Si and 0.17 eV from activation law in Mg2Sn) upon applying the modified Becke-Johnson semilocal exchange potential and including spin-orbit coupling in the calculations. Calculated phonon spectra support crystal stability of both compounds. For Mg2Si, the contributions from Si and Mg are spread over all the spectrum (0-10 THz), whereas in the case of Mg2Sn, a gap opens around 4 THz with Sn and Mg contributions dominating in lower and higher energy range, respectively. The calculated heat capacity at low temperature (0-300 K) fairly agrees with available experimental data. The crystal structure of Mg2Si1-xSnx with x = 0, 0.25, 0.4, 0.75, 1 was studied by X-ray diffraction measurements. The alloy compositions exist in the ranges 0 < x < 0.4 and 0.6 < x < 1 and the obtained samples are almost single phased. Detailed crystal stability study with temperature revealed that all powder samples started to decompose into MgO, Si and Sn at 630 K. For hot pressed bulk materials, the decomposition is much slower than in powder compounds but it still appears. Interestingly, thermoelectric properties measurements performed in Mg2Si1-xSnx show that both electrical resistivity and thermopower curves are repeatable during temperature cycles up to 770 K. On the other hand, temperature-dependent X-ray powder diffraction suggests that these compounds are not stable. Furthermore, electronic structure calculations of almost 40 impurities (s- and p-block, 3d and 4d transition

  6. Syntheses, crystal structures, and electronic properties of Ba8Si2US14 and Ba8SiFeUS14

    NASA Astrophysics Data System (ADS)

    Mesbah, Adel; Prakash, Jai; Lebègue, Sébastien; Stojko, Wojciech; Ibers, James A.

    2015-10-01

    Black single crystals of the new compounds Ba8Si2US14 and Ba8SiFeUS14 have been obtained by high-temperature solid-state methods at 1223 K. These isostructural compounds crystallize in a new structure type in space group C2h3 - C2/m of the monoclinic system. The salt-like structure comprises isolated US6 octahedra and MS4 tetrahedra separated by Ba cations. The US6 octahedra form pseudo-layers that are separated by two other pseudo-layers formed by isolated MS4 tetrahedra. These compounds do not show any short S-S interactions. Ba8Si2US14 charge balances with 8 Ba2+, 2 Si4+, 1 U4+, and 14 S2-; Ba8SiFeUS14 can be charge balanced with 8 Ba2+, 1 Si4+, 1 Fe3+, 1 U5+, and 14 S2-. DFT calculations using the HSE functional indicate that the compounds are semiconductors. The calculated band gaps are 1.2 eV and 1.8 eV for Ba8Si2US14 and Ba8SiFeUS14, respectively.

  7. A review on solar cells from Si-single crystals to porous materials and quantum dots

    PubMed Central

    Badawy, Waheed A.

    2013-01-01

    Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed. PMID:25750746

  8. A review on solar cells from Si-single crystals to porous materials and quantum dots.

    PubMed

    Badawy, Waheed A

    2015-03-01

    Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.

  9. Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped Lu2SiO5 crystal

    NASA Astrophysics Data System (ADS)

    Li, D. Z.; Xu, X. D.; Zhou, D. H.; Xia, C. T.; Wu, F.; Xu, J.; Cong, Z. H.; Zhang, J.; Tang, D. Y.

    2011-01-01

    High quality Nd3+-doped Lu2SiO5 (Nd:LSO) crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Room temperature absorption and fluorescence spectra and fluorescence lifetime of the Nd:LSO crystal were measured and analyzed. The Judd-Ofelt intensity parameters Ω2,4,6 were obtained to be 2.59, 4.90, and 5.96×10-20 cm2, respectively. The absorption and emission cross sections and the branching ratios were calculated. The peak emission cross section is 5.8 and 6.6×10-20 cm2 at 1075 and 1079 nm, respectively, with full width at half maximum (FWHM) of 2.8 and 5.1 nm in turn. Pumped by a laser diode, a maximum 2.54 W continuous-wave laser output has been obtained with a slope efficiency of 32%. All the results show that this crystal is a promising laser material.

  10. Ternary rare earth silicides RE2M3Si4 (RE = Sc, Y, Lu; M = Mo, W): crystal structure, coloring and electronic properties.

    PubMed

    Nielsen, Morten B; Xie, Weiwei; Cava, Robert J

    2016-03-01

    The ternary compounds Sc2Mo3Si4, Y2Mo3Si4, Lu2Mo3Si4 and Sc2W3Si4 have been synthesized using arc melting and structurally characterized using single crystal X-ray diffraction. The compounds are isostructural with Gd5Si4 but with coloring (order of the rare earth and transition metals) on the Gd site. In contrast to group 4 and 5 ternaries of the same type, we observe no site mixing between the rare earth and transition metals. The Y compound displays a different, less common coloring from the others and through DFT calculations and investigation of the solid solution between Sc2Mo3Si4 and Y2Mo3Si4 it is shown that the different coloring of the latter is only marginally more stable. The electronic structures of the ternary compounds have been investigated using DFT calculations, yielding densities of states very similar to Gd5Si4. These predict metallic behavior and no magnetism, which is confirmed through resistivity and magnetization measurements. PMID:26817679

  11. Sublimation in Growth of Aluminum Nitride-silicon carbide Alloy Crystals on SiC (001) substrates

    SciTech Connect

    Gu, Z; Edgar, J H; Payzant, E Andrew; Meyer III, Harry M; Walker, Larry R; Sarua, A; Kuball, M

    2005-06-01

    Thick (up to 1 mm) AlN-SiC alloy crystals were grown on off-axis Si-face 6H-SiC (0001) substrates by the sublimation-recondensation method from a mixture of AlN and SiC powders at 1860-1990 C in a N2 atmosphere. The color of the crystals changed from clear to dark green with increasing growth temperature. Raman spectroscopy and x-ray diffraction (XRD) confirmed an AlN-SiC alloy was formed with the wurtzite structure and good homogeneity. Three broad peaks were detected in the Raman spectra, with one of those related to an AlN-like and another one to a SiC-like mode, both shifted relative to their usual positions in the binary compounds, and the third with possible contributions from both AlN and SiC. Scanning Auger microanalysis (SAM) and electron probe microanalysis (EPMA) demonstrated the alloy crystals had an approximate composition of (AlN)0.75(SiC)0.25 with a stoichiometric ratio of Al:N and Si:C. The substrate misorientation ensured a two-dimensional growth mode confirmed by scanning electron microscopy (SEM).

  12. Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films

    SciTech Connect

    Wen, Guozhi; Zeng, Xiangbin Wen, Xixin; Liao, Wugang

    2014-04-28

    Silicon quantum dots (QDs) embedded in hydrogenated amorphous Si-rich silicon carbide (α-SiC:H) thin films were realized by plasma-enhanced chemical vapor deposition process and post-annealing. Fluorescence spectroscopy was used to characterize the room-temperature photoluminescence properties. X-ray photoelectron spectroscopy was used to analyze the element compositions and bonding configurations. Ultraviolet visible spectroscopy, Raman scattering, and high-resolution transmission electron microscopy were used to display the microstructural properties. Photoluminescence measurements reveal that there are six emission sub-bands, which behave in different ways. The peak wavelengths of sub-bands P1, P2, P3, and P6 are pinned at about 425.0, 437.3, 465.0, and 591.0 nm, respectively. Other two sub-bands, P4 is red-shifted from 494.6 to 512.4 nm and P5 from 570.2 to 587.8 nm with temperature increasing from 600 to 900 °C. But then are both blue-shifted, P4 to 500.2 nm and P5 to 573.8 nm from 900 to 1200 °C. The X-ray photoelectron spectroscopy analysis shows that the samples are in Si-rich nature, Si-O and Si-N bonds consumed some silicon atoms. The structure characterization displays that a separation between silicon phase and SiC phase happened; amorphous and crystalline silicon QDs synthesized with increasing the annealing temperature. P1, P2, P3, and P6 sub-bands are explained in terms of defect-related emission, while P4 and P5 sub-bands are explained in terms of quantum confinement effect. A correlation between the peak wavelength shift, as well as the integral intensity of the spectrum and crystallization of silicon QDs is supposed. These results help clarify the probable luminescence mechanisms and provide the possibility to optimize the optical properties of silicon QDs in Si-rich α-SiC: H materials.

  13. Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO{sub 2} substrates

    SciTech Connect

    Kurosawa, Masashi; Sadoh, Taizoh; Miyao, Masanobu

    2014-11-07

    Orientation-controlled crystalline Si films on insulating substrates are strongly required to achieve high-performance thin-film devices for next-generation electronics. We have comprehensively investigated the layer-exchange kinetics of Al-induced crystallization (AIC) in stacked structures, i.e., amorphous-Si/Al-oxide/Al/SiO{sub 2}-substrates, as a function of the air-exposure time of Al surfaces (t{sub air}: 0–24 h) to form Al-oxide interface-layers, the thickness of Al and Si layers (d{sub Al,} d{sub Si}: 50–200 nm), the annealing temperature (450–500 °C), and the annealing time (0–50 h). It has been clarified that longer t{sub air} (>60 min) and/or thinner d{sub Al} and d{sub Si} (<50 nm) lead to the (111) oriented growth; in contrast, shorter t{sub air} (<60 min) and/or thicker d{sub Al} and d{sub Si} (>100 nm) lead to the (100) oriented growth. No correlation between the annealing temperature and the crystal orientation is observed. Detailed analysis reveals that the layer-exchange kinetics are dominated by “supply-limited” processing, i.e., diffusion of Si atoms into Al layers through Al-oxide layer. Based on the growth rate dependent Si concentration profiles in Al layers, and the free-energy of Si at Al-oxide/Al or Al/SiO{sub 2} interfaces, a comprehensive model for layer-exchange growth is proposed. This well explains the experimental results of not only Si-AIC but also another material system such as gold-induced crystallization of Ge. In this way, a growth technique achieving the orientation-controlled Si crystals on insulating substrates is established from both technological and scientific points of view.

  14. Stability of a Crystal Oscillator, Type Si530, Inside and Beyond its Specified Operating Temperature Range

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Hammoud, Ahmad

    2011-01-01

    Data acquisition and control systems depend on timing signals for proper operation and required accuracy. These clocked signals are typically provided by some form of an oscillator set to produce a repetitive, defined signal at a given frequency. Crystal oscillators are commonly used because they are less expensive, smaller, and more reliable than other types of oscillators. Because of the inherent characteristics of the crystal, the oscillators exhibit excellent frequency stability within the specified range of operational temperature. In some cases, however, some compensation techniques are adopted to further improve the thermal stability of a crystal oscillator. Very limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) crystal oscillators at temperatures beyond the manufacturer's specified operating temperature range. This information is very crucial if any of these parts were to be used in circuits designed for use in space exploration missions where extreme temperature swings and thermal cycling are encountered. This report presents the results of the work obtained on the operation of Silicon Laboratories crystal oscillator, type Si530, under specified and extreme ambient temperatures.

  15. Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Yazdi, G. R.; Beckers, M.; Giuliani, F.; Syväjärvi, M.; Hultman, L.; Yakimova, R.

    2009-02-01

    A sublimation-recondensation process is presented for high quality AlN (0001) crystals at a high growth rate by employing 4H-SiC substrates with a predeposited epilayer. It is based on the coalescence of well oriented AlN microrods, which evolve from the apex of 2H-SiC pyramids grown out of hexagonal pits formed by thermal etching of the substrate during a temperature ramp up. This process yields stress-free 120-μm-thick AlN single crystals with a dislocation density as low as 2×106cm-2.

  16. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1999-01-01

    Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

  17. Crystallization Experiments of SiO2-rich Amorphous Silicate: Application to SiO2-rich Circumstellar Dust and GEMS

    NASA Astrophysics Data System (ADS)

    Matsuno, Junya; Tsuchiyama, Akira; Koike, Chiyoe; Chihara, Hiroki; Ohi, Shugo; Imai, Yuta; Noguchi, Ryo

    2012-07-01

    Crystallization experiments of relatively SiO2-rich amorphous silicates using the mean chemical composition of the silicate portions in GEMS (glass with embedded metal and sulfide), which is a major component in anhydrous interplanetary dust particles and a primitive material of the early solar system, were performed to understand the presence of crystalline silica around young stars and crystallization in GEMS. Olivine crystallized at ~900-1400 K, probably prior to pyroxene. Three different polymorphs of pyroxene, protopyroxene, orthopyroxene, and clinopyroxene, were identified at >=1000 K. Cristobalite, which is one of the silica polymorphs, crystallized only at high temperatures (>=1500 K). We obtained time-temperature-transformation (TTT) crystallization diagrams. These results suggest that crystallization of a silica polymorph is kinetically difficult in a day or so at ~900-1400 K even for the SiO2-saturated composition, while the crystallization might be possible after metastable olivine crystallization if duration is long enough. The TTT diagram also indicates that the GEMS cooling timescale was ~105 s if they condensed at 1000 K as amorphous silicates and annealed during cooling after the condensation.

  18. M-line spectroscopy on mid-infrared Si photonic crystals for fluid sensing and chemical imaging.

    PubMed

    Lavchiev, V M; Jakoby, B; Hedenig, U; Grille, Th; Kirkbride, J M R; Ritchie, G A D

    2016-01-11

    The presented work demonstrates the design and characterization of Si-based photonic crystal waveguides operating as an evanescent wave absorption sensor in the mid-IR range λ = 5-6 µm. The photonic crystal structure is fabricated in a Si slab upon a thin Si(3)N(4)/TEOS/Si(3)N(4) membrane. M-line spectroscopy is used to verify the presence of guided waves. Different fillings of the photonic crystal holes have been realized to avoid sample residuals in the holes and, at the same time, to obtain spectral tuning of the structures by modification of the refractive index contrast with the photonic background. The chip displays sensitivity to fluid droplets in two-prism experiments. The output signal is quantitatively related to the fluid's absorption coefficient thereby validating the experimental method. PMID:26832257

  19. Czochralski growth and Faraday rotation properties of Tb9.33(SiO4)6O2 crystals

    NASA Astrophysics Data System (ADS)

    Chen, Xin; Gong, Zhongliang; Fu, Hao; Zhuang, Naifeng; Zhang, Wenhui; Xie, Xitong; Guo, Feiyun; Chen, Jianzhong

    2015-05-01

    Tb9.33(SiO4)6O2 crystals have been grown by the Czochralski technique for the first time for magneto-optical applications. Rietveld structure refinement of XRD data confirms that the compound crystallizes in the hexagonal system P63 / m, with oxyapatite structure. Transmittance spectra and the Faraday rotation have been investigated, which demonstrate that Tb9.33(SiO4)6O2 crystals show a higher visible transparency and a larger Faraday rotation than Tb3Ga5O12 crystals. Tb9.33(SiO4)6O2 is therefore a promising material in particular for new magneto-optical applications in the visible-near IR wavelength region.

  20. Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

    SciTech Connect

    Qiusheng, Y. Senkai, C. Jisheng, P.

    2015-03-30

    Different machining processes were used in the single crystal SiC wafer machining. SEM was used to observe the surface morphology and a cross-sectional cleavages microscopy method was used for subsurface cracks detection. Surface and subsurface cracks characteristics of single crystal SiC wafer in abrasive machining were analysed. The results show that the surface and subsurface cracks system of single crystal SiC wafer in abrasive machining including radial crack, lateral crack and the median crack. In lapping process, material removal is dominated by brittle removal. Lots of chipping pits were found on the lapping surface. With the particle size becomes smaller, the surface roughness and subsurface crack depth decreases. When the particle size was changed to 1.5µm, the surface roughness Ra was reduced to 24.0nm and the maximum subsurface crack was 1.2µm. The efficiency of grinding is higher than lapping. Plastic removal can be achieved by changing the process parameters. Material removal was mostly in brittle fracture when grinding with 325# diamond wheel. Plow scratches and chipping pits were found on the ground surface. The surface roughness Ra was 17.7nm and maximum subsurface crack depth was 5.8 µm. When grinding with 8000# diamond wheel, the material removal was in plastic flow. Plastic scratches were found on the surface. A smooth surface of roughness Ra 2.5nm without any subsurface cracks was obtained. Atomic scale removal was possible in cluster magnetorheological finishing with diamond abrasive size of 0.5 µm. A super smooth surface eventually obtained with a roughness of Ra 0.4nm without any subsurface crack.

  1. High-resolution x-ray diffraction measurements of SiGe/Si structures

    SciTech Connect

    Jordan-Sweet, J.L.; Mooney, P.M.; Stephenson, G.B.

    1995-09-01

    High-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables one to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows one to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. They demonstrate the power of these techniques with two examples.

  2. Spin measurement in an undoped Si/SiGe double quantum dot incorporating a micromagnet

    NASA Astrophysics Data System (ADS)

    Wu, Xian; Ward, Daniel; Prance, Jonathan; Kim, Dohun; Shi, Zhan; Mohr, Robert; Gamble, John; Savage, Donald; Lagally, Max; Friesen, Mark; Coppersmith, Susan; Eriksson, Mark

    2014-03-01

    We present measurements on a double dot formed in an accumulation-mode undoped Si/SiGe heterostructure. The double dot incorporates a proximal micromagnet to generate a stable magnetic field difference between the quantum dots. The gate design incorporates two layers of gates, and the upper layer of gates is split into five different sections to decrease crosstalk between different gates. A novel pattern of the lower layer gates enhances the tunability of tunnel rates. We will describe our attempts to create a singlet-triplet qubit in this device. This work was supported in part by ARO(W911NF-12-0607), NSF(DMR-1206915), and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. Now works at Lancaster University, UK.

  3. Color centers in Cu-doped Bi 12SiO 20 crystals

    NASA Astrophysics Data System (ADS)

    Potera, P.; Piecuch, A.

    2007-01-01

    The present work is devoted to the investigation of stable color centers that are induced by light illumination of Cu-doped Bi 12SiO 20 (BSO) single crystals. The induced stable absorption is characterized by wide band with maximum at 21,500 cm -1 and optical bleaching in the near-infrared region. We clearly attribute the observed changes to the increase in the Cu + concentration and decrease the Cu 2+ concentration as a result of electron trapping by Cu 2+ ions (Cu 2++e -→Cu +). The effect of heating in air on the absorption of light is studied. The decay activation energy of photochromic centers in BSO:Cu crystals is obtained from the transmission spectra.

  4. Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

    NASA Astrophysics Data System (ADS)

    Pezzoli, Fabio; Giorgioni, Anna; Gallacher, Kevin; Isa, Fabio; Biagioni, Paolo; Millar, Ross W.; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Isella, Giovanni; Paul, Douglas J.; Miglio, Leo

    2016-06-01

    We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

  5. Multiplexed DNA detection using spectrally encoded porous SiO2 photonic crystal particles

    PubMed Central

    Meade, Shawn O.; Chen, Michelle Y.

    2009-01-01

    A particle-based multiplexed DNA assay based on encoded porous SiO2 photonic crystal disks is demonstrated. A “spectral barcode” is generated by electrochemical etch of a single-crystal silicon wafer using a programmed current-time waveform. A lithographic procedure is used to isolate cylindrical microparticles 25 microns in diameter and 10 microns thick, which are then oxidized, modified with a silane linker, and conjugated to various amino functionalized oligonucleotide probes via cyanuric chloride. It is shown that the particles can be decoded based on their reflectivity spectra, and that a multiple analyte assay can be performed in a single sample with a modified fluorescence microscope. The homogeneity of the reflectivity and fluorescence spectra, both within and across the microparticles is also reported. PMID:19271746

  6. Impurity effects in the growth of 4H-SiC crystals by physical vapor transport

    SciTech Connect

    Balakrishna, V.; Augustine, G.; Hopkins, R.H.

    1999-07-01

    SiC is an important wide bandgap semiconductor material for high temperature and high power electronic device applications. Purity improvements in the growth environment has resulted in a two-fold benefit during growth: (a) minimized inconsistencies in the background doping resulting in high resistivity (> 5,000 ohm-cm) wafer yield increase from 10--15% to 70--85%, and (b) decrease in micropipe formation. Growth parameters play an important role in determining the perfection and properties of the SiC crystals, and are extremely critical in the growth of large diameter crystals. Several aspects of growth are vital in obtaining highly perfect, large diameter crystals, such as: (1) optimized furnace design, (2) high purity growth environment, and (3) carefully controlled growth conditions. Although significant reduction in micropipe density has been achieved by improvements in the growth process, more stringent device requirements mandate further reduction in the defect density. In-depth understanding of the mechanisms of micropipe formation is essential in order to devise approaches to eliminate them. Experiments have been performed to understand the role of growth conditions and ambient purity on crystal perfection by intentionally introducing arrays of impurity sites on one half of the growth surface. Results clearly suggest that presence of impurities or second phase inclusions during start or during growth can result in the nucleation of micropipes. Insights obtained from these studies were instrumental in the growth of ultra-low micropipe density (less than 2 micropipes cm{sup {minus}2}) in 1.5 inch diameter boules.

  7. Structural study and Raman scattering analysis of Cu2ZnSiTe4 bulk crystals.

    PubMed

    Levcenko, Serghei; Nateprov, Alexandr; Kravtsov, Victor; Guc, Maxim; Pérez-Rodríguez, Alejandro; Izquierdo-Roca, Victor; Fontané, Xavier; Arushanov, Ernest

    2014-12-15

    Bulk crystals of Cu(2)ZnSiTe(4) (CZSiTe) have been prepared by modified Bridgman method and have been investigated by single crystal X-ray method, Energy Dispersive X-Ray analysis and Raman scattering techniques. The structural studies revealed that the CZSiTe compounds crystallizes in the tetragonal space group I4¯2m, with a = b = 5.9612(1) Å and c = 11.7887(4) Å at 293 K. The Raman spectrum characteristic of the crystals exhibits nine peaks, with two dominant peaks at approximately 134 cm(-1) and 151 cm(-1) that can be used as fingerprint peaks for the identification of this compound. The Raman peaks were analyzed on the basis of the derived irreducible representation for the zone center phonons and by comparison with experimental and theoretical data from close related semiconductors as Cu(2)FeSnS(4) and Cu(2)ZnSnSe(4). PMID:25607506

  8. A direct measurement of the electronic structure of Si nanocrystals and its effect on optoelectronic properties

    SciTech Connect

    Mustafeez, Waqas; Salleo, Alberto; Majumdar, Arka; Vučković, Jelena

    2014-03-14

    Since reports that silicon nanocrystals (Si-NCs) can exhibit direct transition emission, the silicon laser field is at a juncture where the importance of this discovery needs to be evaluated. Most theoretical models predicted a monotonic increase in the bandgap and experimental information currently available on the electronic structure at the Γ valley of these promising materials is circumstantial as it is obtained from emission measurements where competing non-radiative relaxation and recombination processes only provide an incomplete picture of the electronic structure of Si-NCs. Optical absorption, the most immediate probe of the electronic structure beyond the band-edges, showing the evolution of the Γ valley states with nanocrystal size has not been measured. Here, we show such measurements, performed with high dynamic range, allowing us to observe directly the effect of crystal size on the Γ valley splitting far above the band-edges. We show that the splitting is 100 s of meV more pronounced than predicted by pseudo potential calculations and Luttinger-Kohn model. We also show that ultrafast red-shifting emission can be observed in plasma enhanced chemical vapor deposition prepared Si-NCs.

  9. Effect of SiO2 nanoparticle doping on electro-optical properties of polymer dispersed liquid crystal lens for smart electronic glasses

    NASA Astrophysics Data System (ADS)

    Kim, Eunju; Liu, Yang; Hong, Sung-Jei; Han, Jeong In

    2015-03-01

    In this paper, SiO2 nanoparticle doped polymer dispersed liquid crystal (PDLC) lenses were made from a mixture of prepolymer, E7 liquid crystal and SiO2 nanoparticles by the polymerization induced phase separation (PIPS) process for smart electronic glasses with auto-shading and auto-focusing functions. Electro-optical properties of doped and undoped samples including transmittance, driving voltage, contrast ratio and slope of the linear region of the transmittance-voltage were measured, compared and analyzed. Driving voltage of SiO2 nanoparticle doped PDLC lenses moderately improved. But the slope of linear region, response time and contrast ratio deteriorated, especially the latter two. It can be assumed that these doping effects were due to the mechanistic change from liquid-gel separation to liquid-liquid separation by the fast heterogeneous nucleation rate caused by the increased nucleation at the surface of SiO2 nanoparticles. The marked deteriorations of falling response time and contrast ratio were due to well defined liquid crystal molecules in LC droplets, which induced slow and imperfect random rearrangement of LC molecules at the off state.

  10. Mixed Si/Ge nine-atom Zintl clusters: ESI mass spectrometric investigations and single-crystal structure determination of paramagnetic [Si(9-x)Ge(x)]3-.

    PubMed

    Waibel, Markus; Fässler, Thomas F

    2013-05-20

    Mixed Si/Ge compounds are of special interest as potential materials for photovoltaic applications. In order to evaluate the usage of soluble precursor compounds, we investigated the synthesis of heteroatomic nine-atom clusters that consist of Si and Ge atoms through dissolution of the ternary Zintl phases K12Si(17-x)Ge(x) (x = 9, 12) and Rb12Si(17-x)Ge(x) (x = 9). Electrospray ionization (ESI) mass spectrometry demonstrates the presence of mixed Si(9-x)Ge(x) clusters in acetonitrile solution. From ammonia solutions of the ternary phases, four compounds that contain 3-fold negatively charged [Si(9-x)Ge(x)](3-) clusters are obtained. The paramagnetic behavior is confirmed by EPR spectroscopy. [E9](3-) Zintl clusters are considered as intermediate structures in the stepwise oxidation of [E9](4-) clusters to novel element allotropes (E = Si-Pb). The structure of Rb[Rb-crypt]2[Si2.3(1)Ge6.7(1)](NH3)7 and the isostructural structures of [Rb-crypt]3[Si2.2(1)Ge6.8(1)](NH3)8, [K-crypt]3[Si2.4(1)Ge6.6(1)](NH3)8.5, and [K-crypt]3[Si4.6(1)Ge4.4(1)](NH3)8.5 are investigated by single-crystal X-ray diffraction (crypt = 4,7,13,16,21,24-hexaoxa-1,10-diazabicyclo[8.8.8]-hexacosane). The Si/Ge ratio of the products correlates with the composition of the ternary precursor phases.

  11. Timing performance measurements of Si-PM-based LGSO phoswich detectors

    NASA Astrophysics Data System (ADS)

    Yamamoto, Seiichi; Kobayashi, Takahiro; Okumura, Satoshi; Yeom, Jung Yeol

    2016-06-01

    Since the timing resolution was significantly improved using silicon photomultipliers (Si-PMs) combined with fast scintillators, we expect that phoswich detectors will be used in future TOF-PET systems. However, no practical phoswich detector has been proposed for TOF-PET detectors. We conducted timing performance measurements of phoswich detectors comprised of two types of Ce-doped LGSO scintillators with different decay times coupled to Si-PMs and digitized the output signals using a high bandwidth digital oscilloscope. We prepared three types of LGSOs (LGSO-fast, LGSO-standard, and LGSO-slow) with different Ce concentrations. After measuring the decay time, the energy performance, and the timing performance of each LGSO, we conducted pulse shape analysis and timing resolution measurements for two versions of phoswich LGSOs: LGSO-standard/LGSO-fast and LGSO-slow/LGSO-fast combinations. The pulse shape spectra for a 10-mm-long crystal LGSO-slow/LGSO-fast combination showed good separation of the front and back crystals with a peak-to-valley ratio of 2.0. The timing resolutions for the 20-mm-long crystal LGSO-slow/LGSO-fast combination were ~300 ps FWHM. The timing resolutions for the phoswich LGSOs were slightly inferior than that measured with the individual LGSO fast, but the acquired timing resolution for the phoswich configuration, ~300 ps with a LGSO-slow/LGSO-fast combination, is adequate for TOF-PET systems. We conclude that LGSO phoswich detectors are promising for TOF-DOI-PET systems.

  12. Simultaneous presence of (Si{sub 3}O{sub 10}){sup 8−} and (Si{sub 2}O{sub 7}){sup 6−} groups in new synthetic mixed sorosilicates: BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) and isotypic compounds, studied by single-crystal X-ray diffraction, Raman spectroscopy and DFT calculations

    SciTech Connect

    Wierzbicka-Wieczorek, Maria; Többens, Daniel M.; Kolitsch, Uwe; Tillmanns, Ekkehart

    2013-11-15

    Three new, isotypic silicate compounds, BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}), SrYb{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) and SrSc{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}), were synthesized using high-temperature flux growth techniques, and their crystal structures were solved from single-crystal X-ray intensity data: monoclinic, P2{sub 1}/m, with a=5.532(1)/5.469(1)/5.278(1), b=19.734(4)/19.447(4)/19.221(4), c=6.868(1)/6.785(1)/6.562(1) Å, β=106.53(3)/106.20(3)/106.50(3)°, V=718.8(2)/693.0(2)/638.3(2) Å{sup 3}, R(F)=0.0225/0.0204/0.0270, respectively. The topology of the novel structure type contains isolated horseshoe-shaped Si{sub 3}O{sub 10} groups (Si–Si–Si=93.15–95.98°), Si{sub 2}O{sub 7} groups (Si–O{sub bridge}–Si=180°, symmetry-restricted) and edge-sharing M(1)O{sub 6} and M(2)O{sub 6} octahedra. Single-crystal Raman spectra of the title compounds were measured and compared with Raman spectroscopic data of chemically and topologically related disilicates and trisilicates, including BaY{sub 2}(Si{sub 3}O{sub 10}) and SrY{sub 2}(Si{sub 3}O{sub 10}). The band assignments are supported by additional theoretical calculation of Raman vibrations by DFT methods. - Graphical abstract: View of BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) along [100], showing zigzag chains and the tri- and disilicate groups. The unit cell is outlined. Display Omitted - Highlights: • We report a novel interesting crystal structure type for mixed sorosilicates containing Y, Yb, and Sc. • Synthesis of such mixed sorosilicates is possible by a high-temperature flux-growth technique. • Calculation of Raman vibrations by advanced DFT methods allows a considerably improved interpretation of measured Raman spectra.

  13. Growth of Si spherical crystals and the surface oxidation (M-9)

    NASA Technical Reports Server (NTRS)

    Nishinaga, Tatau

    1993-01-01

    Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting materials. For instance, the integrated circuits (IC), which are used in almost all electronic equipments such as TV, tape recorders, audio amplifiers, etc., are made after various processings of Si single crystal wafers. In these wafers, the same controlled amounts of impurities are added and the uniformities in their distributions are extremely important. Growth under microgravity makes it possible to eliminate the buoyancy-driven convection in the melt, which is one of the main origins of convections which results in non-uniformity of the impurity. Another source of convection is known as Marangoni convection which is driven on the free surface when a temperature gradient occurs. One of the merits of microgravity experimentation is that the detailed study of this convection becomes possible. Another important advantage of microgravity is that growth of crystals without a crucible is possible. This makes it possible to study melt growth without the strain which is usually introduced on the ground. Nevertheless, we should repeat and analyze many growth experiments in space to get reliable results. However, since in the FMPT, the time for the experiment is limited, we plan to carry out two kinds of very simple and basic experiments as the first step for the semiconductor growth experiment. In the first experiment, we use single crystal Si sphere as the starting material and as shown, this sphere is heated in the furnace at a slightly higher temperature than the melting point. After the melting front moves nearly half way to its center, the temperature is decreased to stop the melting and to start the growth from the seed for which we use the unmelted solid party of the sphere. The sphere is centered by quartz protuberances inside of the quartz crucible. There exists the possibility of temperature fluctuations being introduced when the molten sphere occasionally touches

  14. Multiple-layer SOI based on Single-Crystal Si Nanomembrane Transfer

    NASA Astrophysics Data System (ADS)

    Peng, Weina; Roberts, Michelle; Nordberg, Eric; Flack, Frank; Colavita, Paula; Hamers, Robert; Savage, Donald; Lagally, Max; Eriksson, Mark

    2007-03-01

    Silicon-on-insulator (SOI) has many advantages over bulk Si including the reduction of parasitic resistance and increased device speed. Multiple-layer SOI, having more device layers per unit area, enables 3D process integration as well as applications in optics. However, it is impossible to achieve such a system by growth techniques (one can grow only non-crystalline Si on SiO2), and multiple Smart Cut transfers used to create single layer SOI may be prohibitively expensive. We present here a novel method to fabricate such a multiple SOI system using transferred Si nanomembranes^ and subsequent oxidation. The surface roughness and interface quality are examined respectively by AFM and cross-sectional SEM. Low surface roughness (0.176nm) and smooth interfaces are achieved. As an example optical application, we apply the multilayer system to fabricate a Si-based Bragg reflector. The specular reflectivity of one, two, and three-membrane mirrors is measured using FTIR. High specular reflectivity, above 99%, is achieved for three stacked membranes. Comparison of the measured reflectivity with theoretical calculations shows good agreement.

  15. Crystal structure of coesite, a high-pressure form of SiO/sub 2/, at 15 and 298 K from single-crystal neutron and x-ray diffraction data: test of bonding models

    SciTech Connect

    Smyth, J.R.; Smith, J.V.; Artioli, G.; Kvick, A.

    1987-02-12

    The crystal structure of a natural coesite from an eclogite rock fragment in the Roberts Victor kimberlite, South Africa, was determined at 15 K by neutron diffraction (a = 7.1357 (13) A, b = 12.3835 (26) A, c = 7.1859 (11) A, ..beta.. = 120.375 (16)/sup 0/, C2/c), and at approx.298 K by X-ray diffraction. Cell dimensions measured by neutron diffraction at 292 K (7.1464 (9), 12.3796 (19), and 7.1829 (8) A, 120.283 (9)/sup 0/) differed from those determined by X-ray diffraction, probably because of a systematic absorption error for the latter. The strongly anisotropic nature of the thermal expansion is explained qualitatively by the relatively large changes (approx.1%) in the distances between the nonbonded oxygen neighbors and the relatively small changes of Si-O-Si and O-Si-O angles in the compact three-dimensional framework. There is a good, but not perfect, negative correlation between the eight independent Si-O distances and the five independent values for sec theta(Si-O-Si) at 15 K. It is weaker than that for 298 K, and the scatter from a straight-line prediction from molecular-orbital models for small clusters (e.g., H/sub 6/Si/sub 2/O/sub 7/) implies that it is desirably to consider additional forces, including repulsive forces between nonbonded oxygen neighbors. The combined at a for Si-O and Si-O-Si in coesite, quartz, and cristobalite at 10-15 K show less scatter than those for approx.298 K, in accordance with the greater thermal response of framework geometry in the more open structures.

  16. Surface and defect correlation studies on high resistivity 4H SiC bulk crystals and epitaxial layers for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Muzykov, Peter G.; Krishna, Ramesh M.; Hayes, Timothy C.

    2011-09-01

    Radiation detectors have been fabricated using bulk semi-insulating (SI) 4H-SiC crystals and SI and n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) on highly doped (0001) 4H-SiC substrates. The devices have been characterized by optical microscopy, current-voltage (I-V) measurements, thermally stimulated current (TSC) spectroscopy (94K - 650 K), Hall effect, van der Pauw measurements, and electron beam induced current (EBIC) technique. Both epitaxial layers exhibited relatively shallow levels related to Al, B, L- and D- centers. Deep level centers in the n-type epitaxial layer peaked at ~ 400 K (Ea ~ 1.1 eV) and ~ 470 K were correlated with IL2 defect and 1.1 eV center in high purity bulk SI 4H-SiC. The SI epitaxial layer exhibited peak at ~ 290 K (Ea = 0.82 - 0.87 eV) that was attributed to IL1 center and 3C inclusions, and at ~ 525 K that was related to intrinsic defects and their complexes with energy levels close to the middle of the band gap. The TSC spectra of the SI epitaxial layer exhibited peaks with different current polarity which we attributed to the built-in electric field reversal. Results of EBIC and optical microscopy characterization showed segregation of threading dislocations around comet tail defects in the n-type epitaxial layers and presence of stacking faults and 3C-SiC inclusions in both epitaxial layers. The I-V characteristics of the devices on SI epi obtained in wide temperature range (94K - 650 K) exhibited steps at ~ 1 V and ~ 70 V corresponding to the ultimate trap filling of deep centers peaked at > 500 K and at ~ 250 K (Ea ~ 0.57 eV), & ~ 300 K (Ea ~ 0.85 eV) respectively. Slow processes of the injected carrier capture on traps resulted in the I-V characteristic with negative differential resistance (NDR). The high temperature resistivity measurements of bulk SI 4H-SiC sample revealed resistivity hysteresis that was attributed to the filling of the deep level electron trap centers.

  17. Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si

    NASA Astrophysics Data System (ADS)

    Radnóczi, G. Z.; Dodony, E.; Battistig, G.; Vouroutzis, N.; Kavouras, P.; Stoemenos, J.; Frangis, N.; Kovács, A.; Pécz, B.

    2016-02-01

    The nickel metal induced lateral crystallization of amorphous silicon is studied by transmission electron microscopy in the range of temperatures from 413 to 521 °C. The structural characteristics of the whiskers grown at 413 °C are compared to the grains grown at 600 °C, where both Metal Induced Lateral Crystallization (MILC) and Solid Phase Crystallization (SPC) are involved. At 413 °C, long whiskers are formed at any crystallographic direction almost free of defects. In contrary, whiskers grown by MILC around 600 °C are crystallized along the ⟨111⟩ directions. These differences are attributed to the low crystallization rate and suppression of the SPC process. The activation energy of the pure MILC was measured in the order of 2 eV. The effect of Ni on the crystallization rate is studied by in-situ heating experiments inside the microscope. The role of contamination that can inhibit MILC is discussed. The cases of MILC process under limited Ni and unlimited Ni source were studied and compared to in-situ annealing experiments. The crystallization rate is strongly influenced by the neighbouring Ni sources; this long-range interaction is attributed to the requirement of a critical Ni concentration in amorphous silicon before the initiation of the MILC process. The long-range interaction can enhance crystallization along a certain direction. The transition from MILC to SPC and the change of the crystallization mode due to the lack of Ni are discussed. The beneficial effect of long annealing at 413 °C is also discussed.

  18. History dependence of the magnetic properties of single-crystal Fe1 -xCoxSi

    NASA Astrophysics Data System (ADS)

    Bauer, A.; Garst, M.; Pfleiderer, C.

    2016-06-01

    We report the magnetization, ac susceptibility, and specific heat of optically float-zoned single crystals of Fe1 -xCoxSi , 0.20 ≤x ≤0.50 . We determine the magnetic phase diagrams for all major crystallographic directions and cooling histories. After zero-field cooling, the phase diagrams resemble that of the archetypal stoichiometric cubic chiral magnet MnSi. Besides the helical and conical state, we observe a pocket of skyrmion lattice phase just below the helimagnetic ordering temperature. At the phase boundaries between these states evidence for slow dynamics is observed. When the sample is cooled in small magnetic fields, the phase pocket of skyrmion lattice may persist metastably down to the lowest temperatures. Taken together with the large variation in the transition temperatures, transition fields, and helix wavelength as a function of the composition, this hysteresis identifies Fe1 -xCoxSi as an ideal material for future experiments exploring, for instance, the topological unwinding of the skyrmion lattice.

  19. Critical behavior of the single-crystal helimagnet MnSi

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Menzel, Dirk; Jin, Chiming; Du, Haifeng; Ge, Min; Zhang, Changjin; Pi, Li; Tian, Mingliang; Zhang, Yuheng

    2015-01-01

    The critical behavior of the single-crystal helimagnet MnSi is investigated by means of bulk dc magnetization at the boundary between the conical state and paramagnetic phase. We obtain the critical exponents (β =0.242 ±0.006 ,γ =0.915 ±0.003 , and δ =4.734 ±0.006 ), where the self-consistency and reliability are verified by the Widom scaling law and the scaling equation. The critical exponents of MnSi belong to the universality class of tricritical mean-field theory, which unambiguously indicates a tricritical phenomenon at the boundary between the first-order phase transition and the second-order one induced by the external magnetic field. The tricritical point (TCP) is determined as HTCP≈3200 Oe at the critical temperature, consistent with the previous report [A. Bauer, M. Garst, and C. Pfleiderer, Phys. Rev. Lett. 110, 177207 (2013), 10.1103/PhysRevLett.110.177207]. The critical behavior suggests a long-range magnetic coupling with the exchange distance decaying as J (r ) ≈r-4.3 in MnSi.

  20. Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Farrell, S.; Kodama, R.; Blissett, C.; Wang, X.; Colegrove, E.; Metzger, W. K.; Gessert, T. A.; Sivananthan, S.

    2014-08-01

    We report the use of molecular beam epitaxy to achieve p-type doping of CdTe grown on Si(211) substrates, by use of an arsenic cracker and post-growth annealing. A high hole density in CdTe is crucial for high efficiency II-VI-based solar cells. We measured the density of As in single-crystal CdTe by secondary ion mass spectroscopy; this showed that high As incorporation is achieved at low growth temperatures. Progressively higher incorporation was observed during low-temperature growth, presumably because of degradation of crystal quality with incorporation of As at such defect sites as dislocations and defect complexes. After As activation annealing under Hg overpressure, hole concentrations were obtained from Hall measurements. The highest doping level was ˜2.3 × 1016 cm-3, and near-1016 cm-3 doping was readily reproduced. The activation efficiency was ˜50%, but further optimization of the growth and annealing conditions is likely to improve this value.

  1. Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal

    NASA Astrophysics Data System (ADS)

    Zuev, V. V.; Grigoriev, S. N.; Romanov, R. I.; Fominski, V. Y.; Volosova, M. A.; Demin, M. V.

    2016-09-01

    Amorphous WOx films were prepared on the SiC crystal by using two different methods, namely, reactive pulsed laser deposition (RPLD) and reactive deposition by ion sputtering (RDIS). After deposition, the WOx films were annealed in an air. The RISD film possessed a m-WO3 structure and consisted of closely packed microcrystals. Localized swelling of the films and micro-hills growth did not destroy dense crystal packing. RPLD film had layered β-WO3 structure with relatively smooth surface. Smoothness of the films were destroyed by localized swelling and the micro-openings formation was observed. Comparative study of m-WO3/SiC, Pt/m-WO3/SiC, and P-WO3/SiC samples shows that structural characteristics of the WO3 films strongly influence on the voltage/current response as well as on the rate of current growth during H2 detection at elevated temperatures.

  2. Crystal growth and luminescence properties of Yb2Si2O7 infra-red emission scintillator

    NASA Astrophysics Data System (ADS)

    Horiai, Takahiko; Kurosawa, Shunsuke; Murakami, Rikito; Pejchal, Jan; Yamaji, Akihiro; Shoji, Yasuhiro; Chani, Valery I.; Ohashi, Yuji; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira

    2016-08-01

    (CexYb1-x)2Si2O7 (x = 0.00, 0.01) single crystals were grown by the micro-pulling-down method to test the possibility of its application as infra-red scintillator for medical imaging. Powder X-ray diffraction analysis indicated that the crystals were single-phase materials. The radioluminescence spectra of the crystals demonstrated presence of two near infra-red emission peaks (at 1010 and 1030 nm). The emission peaks at 420 and 580 nm ascribed to defects were also observed in the crystals. The human body has maximum transmission in wavelength range from 650 to 1200 nm. Therefore, Yb2Si2O7 is expected to be used as efficient infra-red scintillator for medical applications.

  3. Electron Diffraction Study of α-AlMnSi Crystals Along Non-Crystallographic Zone Axes

    NASA Astrophysics Data System (ADS)

    Song, G. L.; Bursill, L. A.

    The structure of crystalline α-AlMnSi is examined by electron diffraction. Six distinct zone axes are examined, including both normal crystallographic and non-crystallographic zone axes, allowing the space group symmetry of α-AlMnSi to be studied. A method for indexing the non-crystallographic zone axis diffraction patterns, which involve reflections from several nearby crystallographic zone axes, is described and applied to electron diffraction patterns of the quasi-5-fold, 3-fold and 2-fold axes of the icosahedral building units of cubic α-AlMnSi. These are compared with electron diffraction patterns from the corresponding 5-fold, 3-fold and 2-fold axes of the quasicrystalline phase i-AlMnSi, from which we may make some conclusions concerning the occupancies of the icosahedral units in i-AlMnSi. Electron diffraction patterns characteristic of Pmbar {3} were obtained for thicker specimens. However, for thin specimens, as used for HRTEM imaging, the electron diffraction patterns were characteristic of Imbar {3} space group symmetry. This unusual behaviour arises because the structural basis for the Pmbar {3} to Imbar {3} phase transition is a weak effect, involving changes in occupancy of the icosahedral structural elements located at the corners (double-MacKay icosahedra) and body-centers (MacKay icosahedra) of the cubic unit cell. The effects of changing the occupancies of the outer shells of the MI and DMI structural units on the diffraction intensities of the weak reflections were examined. Thus, calculation of the dynamical diffraction amplitudes shows that in fact the weak reflections characteristic of Pmbar {3} only develop sufficient intensity if two conditions are satisfied: namely (1) the crystal thickness exceeds approx. 50 nm and (2) if a significant proportion of Imbar {3} occupancies are included in the structural model. By fitting the observed thickness variation of the diffraction intensities we propose a new set of occupancies for α-AlMnSi

  4. AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

    NASA Astrophysics Data System (ADS)

    Nagai, Ichiro; Kato, Tomohisa; Miura, Tomonori; Kamata, Hiroyuki; Naoe, Kunihiro; Sanada, Kazuo; Okumura, Hajime

    2010-09-01

    Large and thick AlN bulk single crystals up to 43 mm in diameter and 10 mm in thickness have been successfully grown on 6H-SiC (0 0 0 1) substrates by the sublimation method using a TaC crucible. Raman spectrum indicates that the polytype of the grown AlN single crystals is a Wurtzite-2H type structure, and the crystals do not include any impurity phases. The quality at the top of the crystal improves as crystal thickness increases along the <0 0 0 1> direction during growth: a low etch pit density (7×10 4 cm -2) and a small full width at half maximum for a 0002 X-ray rocking curve (58 arcsec) have been achieved at a thickness of ˜8 mm. The possible mechanism behind the improvement in the AlN crystal quality is also discussed.

  5. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films.

    PubMed

    Zhou, H P; Xu, M; Xu, S; Liu, L L; Liu, C X; Kwek, L C; Xu, L X

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  6. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films

    PubMed Central

    Zhou, H. P.; Xu, M.; Xu, S.; Liu, L. L.; Liu, C. X.; Kwek, L. C.; Xu, L. X.

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  7. Positron lifetime measurements in chiral nematic liquid crystals

    NASA Technical Reports Server (NTRS)

    Singh, Jag J.; Eftekhari, Abe; Parmar, Devendra S.

    1991-01-01

    Positron lifetimes in the isotropic phases of chiral nematic liquid crystal formulations and their mixtures up to the racemic level were measured. The lifetime spectra for all liquid crystal systems were analyzed into three components. Although the individual spectra in the left- and right-handed components are identical, their racemic mixtures exhibit much larger orthopositronium lifetimes; these larger lifetimes indicate the presence of larger microvoids. This result is consistent with the reportedly higher thermodynamic stability and color play range in the racemic mixtures of chiral nematic liquid crystals.

  8. Oxidation and microstructure evolution of Al-Si coated Ni3Al based single crystal superalloy with high Mo content

    NASA Astrophysics Data System (ADS)

    Tu, Xiaolu; Peng, Hui; Zheng, Lei; Qi, Wenyan; He, Jian; Guo, Hongbo; Gong, Shengkai

    2015-01-01

    A Si modified aluminide (Al-Si) coating was prepared on a Ni3Al based single crystal superalloy with high Mo content by high-activity pack cementation. Cyclic oxidation test at 1150 °C was carried out and the microstructure evolution of the coating was investigated. The results show that the oxidation resistance of the substrate was greatly increased by applying an Al-Si coating. During oxidation, outward diffusion of Mo was effectively blocked due to its high affinity with Si. Besides, a layered structure was formed as a result of the elements inter-diffusion. An obvious degradation of the Al-Si coating was observed after 100 h oxidation. Possible mechanisms related to the oxidation and elements inter-diffusion behaviours were also discussed.

  9. Crystal structures of (Mg1-x,Fex)SiO3postperovskite at high pressures

    PubMed Central

    Yamanaka, Takamitsu; Hirose, Kei; Mao, Wendy L.; Meng, Yue; Ganesh, P.; Shulenburger, Luke; Shen, Guoyin; Hemley, Russell J.

    2012-01-01

    X-ray diffraction experiments on postperovskite (ppv) with compositions (Mg0.9Fe0.1)SiO3 and (Mg0.6Fe0.4)SiO3 at Earth core-mantle boundary pressures reveal different crystal structures. The former adopts the CaIrO3-type structure with space group Cmcm, whereas the latter crystallizes in a structure with the Pmcm (Pmma) space group. The latter has a significantly higher density (ρ = 6.119(1) g/cm3) than the former (ρ = 5.694(8) g/cm3) due to both the larger amount of iron and the smaller ionic radius of Fe2+ as a result of an electronic spin transition observed by X-ray emission spectroscopy (XES). The smaller ionic radius for low-spin compared to high-spin Fe2+ also leads to an ordered cation distribution in the M1 and M2 crystallographic sites of the higher density ppv structure. Rietveld structure refinement indicates that approximately 70% of the total Fe2+ in that phase occupies the M2 site. XES results indicate a loss of 70% of the unpaired electronic spins consistent with a low spin M2 site and high spin M1 site. First-principles calculations of the magnetic ordering confirm that Pmcm with a two-site model is energetically more favorable at high pressure, and predict that the ordered structure is anisotropic in its electrical and elastic properties. These results suggest that interpretations of seismic structure in the deep mantle need to treat a broader range of mineral structures than previously considered. PMID:22223656

  10. The Influence of C and Si on the Flow Behavior of NiAl Single Crystals

    NASA Technical Reports Server (NTRS)

    Weaver, M. L.; Noebe, R. D.; Kaufman, M. J.

    1996-01-01

    Alloys based on the intermetallic compound NiAl are considered potential replacements for Ni and Co-based superalloys in high temperature structural applications due to their excellent oxidation resistance, low densities, high thermal conductivities, and increased melting points. Unfortunately, NiAl exhibits low tensile ductility at room temperature and low strengths at elevated temperatures which have combined to hinder its development. Recent efforts, have revealed that NiAl in the presence of sufficient solute levels, is subject to the phenomenon of strain aging which manifests itself as: sharp yield points, abnormally low strain rate sensitivities (SRS), plateaus or peaks in yield stress and work hardening rate as a function of temperature, flow stress transients upon an upward change in strain rate, reduced tensile elongations at elevated temperatures, and serrated stress-strain curves. Though recent efforts via either alloying or the removal of interstitial impurities, have resulted in consistent room-temperature tensile elongations exceeding 5% and the elimination of serrated flow, the effects of particular substitutional and interstitial elements and the mechanisms by which they might enhance or hinder the mechanical properties remain unknown. Consequently, the purpose of the present paper is to provide a preliminary assessment of the influence of common substitutional and interstitial impurities on the deformation behavior of NiAl. To accomplish this goal a series of NiAl single crystal alloys containing various interstitial solutes were prepared and their mechanical properties were evaluated between 77 and 1100 K. Because Si is a common impurity in conventional purity single crystals grown by the Bridgman method, Si concentrations were also varied in order to determine the influence of this element.

  11. Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1989-01-01

    The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by an Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.

  12. Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers

    NASA Astrophysics Data System (ADS)

    Kinoshita, Kyoichi; Nakatsuka, Osamu; Arai, Yasutomo; Taguchi, Keisuke; Tomioka, Hiroshi; Tanaka, Ryota; Yoda, Shinichi

    2013-04-01

    Compositionally uniform 2 and 10 mm diameter Si0.5Ge0.5 bulk crystals have been grown by the traveling liquidus-zone (TLZ) method. The TLZ method requires diffusion controlled mass transport in a melt and crystal size was limited for suppressing convection in a melt. For substrate use, however, larger diameter crystals are required. Increase of crystal diameter was challenged in spite of the concern that compositional homogeneity of grown crystals might be degraded due to faster convective flow in a larger diameter melt. As a result, however, increase of crystal diameter was possible up to 30 mm although single crystal length was limited to 5 mm. Si0.55Ge0.45 and Si0.6Ge0.4 bulk crystals with 30 mm diameter showed excellent compositional homogeneity and high crystallinity without mosaicity.

  13. Magnetic properties of Cu-flux-grown UCu2Si2 single crystals

    NASA Astrophysics Data System (ADS)

    Tro, R.; Bukowski, Z.

    2006-01-01

    In order to solve a serious problem of understanding the magnetic properties of UCu2Si2, we have grown single crystals of this compound from Cu-flux. Here we focus primarily on the magnetic behavior of this compound. In contrast to some previous polycrystalline and single-crystalline reports on UCu2Si2 no signs of the transition into antiferromagnetic behavior have been observed below T C = 104(1) K. The magnetic properties of this compound are highly anisotropic, with an easy axis of magnetization along the [001] direction. The saturation moment has been determined at 4.2 K to be 1.55 B. In the paramagnetic region the effective moments for the easy and hard directions are both about 3.0μ B. An extensive discussion of the obtained data, compared to those recently published by Fisk et al. and Matsuda et al., also based on single crystalline materials, has been presented. No an antiferromagnetic phase above T C has been detected.

  14. Characterization of Si nanostructures using internal quantum efficiency measurements

    SciTech Connect

    ZAIDI,SALEEM H.

    2000-04-01

    Hemispherical reflectance and internal quantum efficiency measurements have been employed to evaluate the response of Si nanostructured surfaces formed by using random and periodic reactive ion etching techniques. Random RIE-textured surfaces have demonstrated solar weighted reflectance of {approx} 3% over 300--1,200-nm spectral range even without the benefit of anti-reflection films. Random RIE-texturing has been found to be applicable over large areas ({approximately} 180 cm{sup 2}) of both single and multicrystalline Si surfaces. Due to the surface contamination and plasma-induced damage, RIE-textured surfaces did not initially provide increased short circuit current as expected from the enhanced absorption. Improved processing combined with wet-chemical damage removal etches resulted in significant improvement in the short circuit current with IQEs comparable to the random, wet-chemically textured surfaces. An interesting feature of the RIE-textured surfaces was their superior performance in the near IR spectral range. The response of RIE-textured periodic surfaces can be broadly classified into three distinct regimes. One-dimensional grating structures with triangular profiles are characterized by exceptionally low, polarization-independent reflective behavior. The reflectance response of such surfaces is similar to a graded-index anti-reflection film. The IQE response from these surfaces is severely degraded in the UV-Visible spectral region due to plasma-induced surface damage. One-dimensional grating structures with rectangular profiles exhibit spectrally selective absorptive behavior with somewhat similar IQE response. The third type of grating structure combines broadband anti-reflection behavior with significant IQE enhancement in 800--1,200-nm spectral region. The hemispherical reflectance of these 2D grating structures is comparable to random RIE-textured surfaces. The IQE enhancement in the long wavelength spectral region can be attributed to

  15. Achieving omnidirectional photonic band gap in sputter deposited TiO{sub 2}/SiO{sub 2} one dimensional photonic crystal

    SciTech Connect

    Jena, S. Tokas, R. B.; Sarkar, P.; Thakur, S.; Sahoo, N. K.; Haque, S. Maidul; Misal, J. S.; Rao, K. D.

    2015-06-24

    The multilayer structure of TiO{sub 2}/SiO{sub 2} (11 layers) as one dimensional photonic crystal (1D PC) has been designed and then fabricated by using asymmetric bipolar pulse DC magnetron sputtering technique for omnidirectional photonic band gap. The experimentally measured photonic band gap (PBG) in the visible region is well matched with the theoretically calculated band structure (ω vs. k) diagram. The experimentally measured omnidirectional reflection band of 44 nm over the incident angle range of 0°-70° is found almost matching within the theoretically calculated band.

  16. Multishell contribution to the Dzyaloshinskii-Moriya spiraling in MnSi-type crystals

    NASA Astrophysics Data System (ADS)

    Chizhikov, Viacheslav A.; Dmitrienko, Vladimir E.

    2013-12-01

    The transition from the microscopic Heisenberg model to the macroscopic elastic theory is carried out for MnSi-type chiral magnetics with B20 crystal structure. Both exchange and Dzyaloshinskii-Moriya (DM) interactions are taken into account for the first, second, and third magnetic neighbors. The particular components of the DM vectors of bonds are found, which are responsible for (i) the global magnetic twist and (ii) the canting between four different spin sublattices. A possible mechanism for effective reinforcement of the global magnetic twist is suggested: it is demonstrated that the components of the DM vectors normal to corresponding interatomic bonds become very important for the twisting power. The Ruderman-Kittel-Kasuya-Yosida (RKKY) theory is used for model calculation of exchange parameters. It is found that just the interplay between the exchange parameters of several magnetic shells rather than the signs of DM vectors can be responsible for the concentration-induced reverse of the magnetic chirality recently observed in Mn1-xFexGe crystals.

  17. Behavior of nitrogen in Si crystal during irradiation and post-annealing

    SciTech Connect

    Inoue, Naohisa; Oyama, Hidenori; Watanabe, Kaori; Seki, Hirofumi; Kawamura, Yuichi

    2014-02-21

    Radiation induced complexes in nitrogen (N) -doped silicon crystal was investigated by highly sensitive infrared absorption spectroscopy. The absorption by N{sub 2} pair was reduced by the electron irradiation in FZ crystals. The absorptions appeared on both sides of N{sub 2} line at 766 cm{sup −1}, at about 725 and 778 cm{sup −1}. By the annealing, N{sub 2} lines recovered a little at 600 °C and mostly at 800 °C. The above new absorption lines reduced by the annealing at lower temperatures and other absorption appeared. In CZ silicon, N{sub 2} lines did not change by the irradiation. Dominant absorption in low carbon FZ silicon was that of C-rich type complexes, VO and I{sub n}C{sub i}O{sub im}(n=0–3, m=0,1). Dominant absorption in the irradiated low carbon CZ silicon was that of C-lean type complexes I{sub n}O{sub 2+mi}(n=1, 2, m=0, 1), and the decrease of C-lean type O{sub 2i} and TDD was observed. By the annealing of CZ Si, VO{sub n} (n=2–4) formation and annihilation was observed.

  18. Imaging System For Measuring Macromolecule Crystal Growth Rates in Microgravity

    NASA Technical Reports Server (NTRS)

    Corder, Eric L.; Briscoe, Jeri

    2004-01-01

    In order to determine how macromolecule crystal quality improvement in microgravity is related to crystal growth characteristics, a team of scientists and engineers at NASA's Marshal Space Flight Center (MSFC) developed flight hardware capable of measuring the crystal growth rates of a population of crystals growing under the same conditions. As crystal growth rate is defined as the change or delta in a defined dimension or length (L) of crystal over time, the hardware was named Delta-L. Delta-L consists of three sub assemblies: a fluid unit including a temperature-controlled growth cell, an imaging unit, and a control unit (consisting of a Data Acquisition and Control Unit (DACU), and a thermal control unit). Delta-L will be used in connection with the Glovebox Integrated Microgravity Isolation Technology (g-LIMIT) inside the Microgravity Science Glovebox (MSG), onboard the International Space Station. This paper will describe the Delta-L imaging system. The Delta-L imaging system was designed to locate, resolve, and capture images of up to 10 individual crystals ranging in size from 10 to 500 microns with a point-to-point accuracy of +/- 2.0 microns within a quartz growth cell observation area of 20 mm x 10 mm x 1 mm. The optical imaging system is comprised of a video microscope camera mounted on computer controlled translation stages. The 3-axis translation stages and control units provide crewmembers the ability to search throughout the growth cell observation area for crystals forming in size of approximately 10 microns. Once the crewmember has selected ten crystals of interest, the growth of these crystals is tracked until the size reaches approximately 500 microns. In order to resolve these crystals an optical system with a magnification of 10X was designed. A black and white NTSC camera was utilized with a 20X microscope objective and a 0.5X custom designed relay lens with an inline light to meet the magnification requirement. The design allows a 500 pm

  19. Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal

    NASA Astrophysics Data System (ADS)

    Valvo, M.; Bongiorno, C.; Giannazzo, F.; Terrasi, A.

    2013-01-01

    Transmission electron microscopy (TEM), atomic force microscopy, and Rutherford backscattering spectrometry (RBS) have been used to investigate the morphology, structure, and composition of self-assembled Ge islands grown on Si (001) substrates by molecular beam epitaxy (MBE) at different temperatures. Increasing the temperature from 550 °C to 700 °C causes progressive size and shape uniformity, accompanied by enhanced Si-Ge intermixing within the islands and their wetting layer. Elemental maps obtained by energy filtered-TEM (EF-TEM) clearly show pronounced Si concentration not only in correspondence of island base perimeters, but also along their curved surface boundaries. This phenomenon is strengthened by an increase of the growth temperature, being practically negligible at 550 °C, while very remarkable already at 650 °C. The resulting island shape is affected, since this localized Si enrichment not only provides strain relief near their highly stressed base perimeters but it also influences the cluster surface energy by effective alloying, so as to form Si-enriched SiGe interfaces. Further increase to 700 °C causes a shape transition where more homogenous Si-Ge concentration profiles are observed. The crucial role played by local "flattened" alloyed clusters, similar to truncated pyramids with larger bases and enhanced Si enrichment at coherently stressed interfaces, has been further clarified by EF-TEM analysis of a multi-layered Ge/Si structure containing stacked Ge islands grown at 650 °C. Sharp accumulation of Si has been here observed not only in proximity of the uncapped island surface in the topmost layer but also at the buried Ge/Si interfaces and even in the core of such capped Ge islands.

  20. Luminescence of SiO2 and GeO2 crystals with rutile structure. Comparison with α-quartz crystals and relevant glasses (Review Article)

    NASA Astrophysics Data System (ADS)

    Trukhin, A. N.

    2016-07-01

    Luminescence properties of SiO2 in different structural states are compared. Similar comparison is made for GeO2. Rutile and α-quartz structures as well as glassy state of these materials are considered. Main results are that for α-quartz crystals the luminescence of self-trapped exciton is the general phenomenon that is absent in the crystal with rutile structure. In rutile structured SiO2 (stishovite) and GeO2 (argutite) the main luminescence is due to a host material defect existing in as-received (as-grown) samples. The defect luminescence possesses specific two bands, one of which has a slow decay (for SiO2 in the blue and for GeO2, in green range) and another, a fast ultraviolet (UV) band (4.75 eV in SiO2 and at 3 eV in GeO2). In silica and germania glasses, the luminescence of self-trapped exciton coexists with defect luminescence. The latter also contains two bands: one in the visible range and another in the UV range. The defect luminescence of glasses was studied in details during last 60-70 years and is ascribed to oxygen deficient defects. Analogous defect luminescence in the corresponding pure nonirradiated crystals with α-quartz structure is absent. Only irradiation of a α-quartz crystal by energetic electron beam, γ-rays and neutrons provides defect luminescence analogous to glasses and crystals with rutile structure. Therefore, in glassy state the structure containing tetrahedron motifs is responsible for existence of self-trapped excitons and defects in octahedral motifs are responsible for oxygen deficient defects.

  1. Thermal expansion and elastic anisotropy in single crystal Al2O3 and SiC reinforcements

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Li, Zhuang; Bradt, Richard C.

    1994-01-01

    In single crystal form, SiC and Al2O3 are attractive reinforcing components for high temperature composites. In this study, the axial coefficients of thermal expansion and single crystal elastic constants of SiC and Al2O3 were used to determine their coefficients of thermal expansion and Young's moduli as a function of crystallographic orientation and temperature. SiC and Al2O3 exhibit a strong variation of Young's modulus with orientation; however, their moduli and anisotropies are weak functions of temperature below 1000 C. The coefficients of thermal expansion exhibit significant temperature dependence, and that of the non-cubic Al2O3 is also a function of crystallographic orientation.

  2. Crystal Lattice Controlled SiGe Thermoelectric Materials with High Figure of Merit

    NASA Technical Reports Server (NTRS)

    Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Lee, Kunik; Choi, Sang H.

    2010-01-01

    Direct energy conversion between thermal and electrical energy, based on thermoelectric (TE) effect, has the potential to recover waste heat and convert it to provide clean electric power. The energy conversion efficiency is related to the thermoelectric figure of merit ZT expressed as ZT=S(exp 2)(sigma)T/Kappa, T is temperature, S is the Seebeck coefficient, sigma is conductance and Kappa is thermal conductivity. For a lower thermal conductivity Kappa and high power factor (S(exp 2)(sigma)), our current strategy is the development of rhombohedrally strained single crystalline SiGe materials that are highly [111]-oriented twinned. The development of a SiGe "twin lattice structure (TLS)" plays a key role in phonon scattering. The TLS increases the electrical conductivity and decreases thermal conductivity due to phonon scattering at stacking faults generated from the 60 X rotated primary twin structure. To develop high performance materials, the substrate temperature, chamber working pressure, and DC sputtering power are controlled for the aligned growth production of SiGe layer and TLS on a c-plane sapphire. Additionally, a new elevated temperature thermoelectric characterization system, that measures the thermal diffusivity and Seebeck effect nondestructively, was developed. The material properties were characterized at various temperatures and optimized process conditions were experimentally determined. The present paper encompasses the technical discussions toward the development of thermoelectric materials and the measurement techniques.

  3. Crystal structure dependence of antiferromagnetic coupling in Fe/Si multilayers

    SciTech Connect

    Michel, R.P.; Chaiken, A.; Wall, M.A.

    1995-04-01

    Recent reports of temperature dependent antiferromagnetic coupling in Fe/Si multilayers have motivated the generalization of models describing magnetic coupling in metal/metal multilayers to metal/insulator and metal/semiconductor layered systems. Interesting dependence of the magnetic properties on layer thickness and temperature are predicted. We report measurements that show the antiferromagnetic (AF) coupling observed in Fe/Si multilayers is strongly dependent on the crystalline coherence of the silicide interlayer. Electron diffraction images show the silicide interlayer has a CsCl structure. It is not clear at this time whether the interlayer is a poor metallic conductor or a semiconductor so the relevance of generalized coupling theories is unclear.

  4. Single-crystal p-i-n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Yeh, Wenchang; Tatebe, Kyohei

    2015-08-01

    An intrinsic sputter-epitaxial (SE) Si film with a thickness of 1000 nm and a 50-nm-thick n+ SE-Si film were successfully grown as the light-absorbing layer and emitter layer, respectively, on a heavily doped p-Si(100) wafer to form the p-i-n junction of a solar cell (SC). Heavily doped n+ SE-Si with an electron concentration n of 3 × 1020 cm-3 was grown by cosputtering of Sb with Si. The characteristics of SE-Si grown at 310 °C was investigated in relation to annealing temperature. The oxygen concentration in SE-Si was ˜1018 cm-3, which was found to originate from the gas released in the chamber. Oxygen-induced thermal donors then became the source of n in the film, and n was reduced to 1 × 1016 cm-3 after forming-gas annealing at 700 °C because the thermal donors were neutralized by hydrogen. The SC exhibited a maximum internal quantum efficiency of 73.7%.

  5. Crystallization of LiAlSiO4 Glass in Hydrothermal Environments at Gigapascal Pressures-Dense Hydrous Aluminosilicates.

    PubMed

    Spektor, Kristina; Fischer, Andreas; Häussermann, Ulrich

    2016-08-15

    High-pressure hydrothermal environments can drastically reduce the kinetic constraints of phase transitions and afford high-pressure modifications of oxides at comparatively low temperatures. Under certain circumstances such environments allow access to kinetically favored phases, including hydrous ones with water incorporated as hydroxyl. We studied the crystallization of glass in the presence of a large excess of water in the pressure range of 0.25-10 GPa and at temperatures from 200 to 600 °C. The p and T quenched samples were analyzed by powder X-ray diffraction, scanning electron microscopy, and IR spectroscopy. At pressures of 0.25-2 GPa metastable zeolite Li-ABW and stable α-eucryptite are obtained at low and high temperatures, respectively, with crystal structures based on tetrahedrally coordinated Al and Si atoms. At 5 GPa a new, hydrous phase of LiAlSiO4, LiAlSiO3(OH)2 = LiAlSiO4·H2O, is produced. Its crystal structure was characterized from single-crystal X-ray diffraction data (space group P21/c, a = 9.547(3) Å, b = 14.461(5) Å, c = 5.062(2) Å, β = 104.36(1)°). The monoclinic structure resembles that of α-spodumene (LiAlSi2O6) and constitutes alternating layers of chains of corner-condensed SiO4 tetrahedra and chains of edge-sharing AlO6 octahedra. OH groups are part of the octahedral Al coordination and extend into channels provided within the SiO4 tetrahedron chain layers. At 10 GPa another hydrous phase of LiAlSiO4 with presently unknown structure is produced. The formation of hydrous forms of LiAlSiO4 shows the potential of hydrothermal environments at gigapascal pressures for creating truly new materials. In this particular case it indicates the possibility of generally accessing pyroxene-type aluminosilicates with crystallographic amounts of hydroxyl incorporated. This could also have implications to geosciences by representing a mechanism of water storage and transport in the depths of the Earth. PMID:27482770

  6. Crystallization of LiAlSiO4 Glass in Hydrothermal Environments at Gigapascal Pressures-Dense Hydrous Aluminosilicates.

    PubMed

    Spektor, Kristina; Fischer, Andreas; Häussermann, Ulrich

    2016-08-15

    High-pressure hydrothermal environments can drastically reduce the kinetic constraints of phase transitions and afford high-pressure modifications of oxides at comparatively low temperatures. Under certain circumstances such environments allow access to kinetically favored phases, including hydrous ones with water incorporated as hydroxyl. We studied the crystallization of glass in the presence of a large excess of water in the pressure range of 0.25-10 GPa and at temperatures from 200 to 600 °C. The p and T quenched samples were analyzed by powder X-ray diffraction, scanning electron microscopy, and IR spectroscopy. At pressures of 0.25-2 GPa metastable zeolite Li-ABW and stable α-eucryptite are obtained at low and high temperatures, respectively, with crystal structures based on tetrahedrally coordinated Al and Si atoms. At 5 GPa a new, hydrous phase of LiAlSiO4, LiAlSiO3(OH)2 = LiAlSiO4·H2O, is produced. Its crystal structure was characterized from single-crystal X-ray diffraction data (space group P21/c, a = 9.547(3) Å, b = 14.461(5) Å, c = 5.062(2) Å, β = 104.36(1)°). The monoclinic structure resembles that of α-spodumene (LiAlSi2O6) and constitutes alternating layers of chains of corner-condensed SiO4 tetrahedra and chains of edge-sharing AlO6 octahedra. OH groups are part of the octahedral Al coordination and extend into channels provided within the SiO4 tetrahedron chain layers. At 10 GPa another hydrous phase of LiAlSiO4 with presently unknown structure is produced. The formation of hydrous forms of LiAlSiO4 shows the potential of hydrothermal environments at gigapascal pressures for creating truly new materials. In this particular case it indicates the possibility of generally accessing pyroxene-type aluminosilicates with crystallographic amounts of hydroxyl incorporated. This could also have implications to geosciences by representing a mechanism of water storage and transport in the depths of the Earth.

  7. New Laboratory Measurements of Rhomboidal SiC_3

    NASA Astrophysics Data System (ADS)

    Gottlieb, Carl A.; Thaddeus, Patrick

    2009-06-01

    Rhomboidal SiC_3, the highly polar planar ring with C_{2v} symmetry and a transannular C-C bond, was detected in our laboratory about 10 years ago, and soon afterwards was identified with a radio telescope in the expanding envelope of IRC+10216. Recently a sensitive spectral line survey of IRC+10216 was made with the Submillimeter Array (SMA) in the 300 - 355 GHz range with a 3^'' × 2^'' synthesized beam. Many new lines were detected in this survey. Most are from high rotational transitions of molecules that are known in IRC+10216, but some of the lines are quite narrow and more than 10 of these are unassigned. In support of the SMA observations we have extended the earlier laboratory measurements by Apponi et al. from 286 GHz and K_a ≤ 6, to 450 GHz and K_a ≤ 20 from rotational levels as high as 825 K above ground. As a result uncertainties in the predicted spectrum for lines with high K_a have been reduced by as much as two orders of magnitude, which should aid the assignment of SiC_3 in the SMA survey and in future observations with ALMA. A. J. Apponi, M. C. McCarthy, C. A. Gottlieb, and P. Thaddeus, Journ. Chem. Phys. 111, 3911 (1999). A. J. Apponi, M. C. McCarthy, C. A. Gottlieb, and P. Thaddeus, Astrophys. Journ. Lett. 516, L103 (1999). N. A. Patel, K. H. Young, S. Brünken, R. W. Wilson, P. Thaddeus, K. M. Menten, M. Reid, M. C. McCarthy, Dinh-V Trung, C. A. Gottlieb, and A. Hedden, Astrophys. Journ., in press (2009).

  8. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

    NASA Astrophysics Data System (ADS)

    Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

    2016-08-01

    Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

  9. Influence of the chemical composition of rapidly quenched amorphous alloys (Ni, Fe, Cr)-B-Si on its crystallization process

    NASA Astrophysics Data System (ADS)

    Elmanov, G.; Dzhumaev, P.; Ivanitskaya, E.; Skrytnyi, V.; Ruslanov, A.

    2016-04-01

    This paper presents results of research of the structure and phase transformations during the multistage crystallization of the metallic glasses with the compositions Ni71,5Cr6,8Fe2,7B11,9Si7,1 and Ni63,4Cr7,4Fe4,3Mn0,8B15,6Si8,5 labeled as AWS BNi-2 according to American Welding Society. Differential scanning calorimetry (DSC), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX) were used as experimental research methods. The influence of the alloys chemical composition (boron, manganese and iron) on the temperatures and the exothermic heat effects of phase transformations, as well as on the phase composition of alloys at three stages of crystallization was analyzed. We present a thermodynamic explanation of the observed heat effects. It has been shown that manganese has the main influence on the phase transformations temperatures and heat effects in these two alloys. It is also assumed that at the final crystallization stage simultaneously with the formation of phases Ni3B and β1-Ni3Si should occur the nucleation of borides of CrB type with high Cr and low Si content.

  10. From stable divalent to valence-fluctuating behaviour in Eu(Rh(1-x)Ir(x))2Si2 single crystals.

    PubMed

    Seiro, Silvia; Geibel, Christoph

    2011-09-21

    We have succeeded in growing high-quality single crystals of the valence-fluctuating system EuIr(2)Si(2), the divalent Eu system EuRh(2)Si(2) and the substitutional alloy Eu(Rh(1-x)Ir(x))(2)Si(2) across the range 0 < x < 1, which we characterized by means of x-ray diffraction, energy-dispersive x-ray spectroscopy, specific heat, magnetization and resistivity measurements. On increasing x, the divalent Eu ground state subsists up to x = 0.25 with a slight increase in Néel temperature, while for 0.3≤x < 0.7 a sharp hysteretic change in susceptibility and resistivity marks the first-order valence transition. For x≳0.7 the broad feature observed in the physical properties is characteristic of the continuous valence evolution beyond the critical end point of the valence transition line, and the resistivity is reminiscent of Kondo-like behaviour while the Sommerfeld coefficient indicates a mass renormalization of at least a factor of 8. The resulting phase diagram is similar to those reported for polycrystalline Eu(Pd(1-x)Au(x))(2)Si(2) and EuNi(2)(Si(1-x)Ge(x))(2), confirming its generic character for Eu systems, and markedly different to those of homologue Ce and Yb systems, which present a continuous suppression of the antiferromagnetism accompanied by a very smooth evolution of the valence. We discuss these differences and suggest them to be related to the large polarization energy of the Eu half-filled 4f shell. We further argue that the changes in the rare earth valence between RRh(2)Si(2) and RIr(2)Si(2) (R = Ce, Eu, Yb) are governed by a purely electronic effect and not by a volume effect.

  11. Programmable integrated front-end for SiPM/PMT PET detectors with continuous scintillating crystal

    NASA Astrophysics Data System (ADS)

    Herrero-Bosch, V.; Monzó, J. M.; Ros, A.; Aliaga, R. J.; González, A.; Montoliu, C.; Colom-Palero, R. J.; Benlloch, J. M.

    2012-12-01

    AMIC architecture has been introduced in previous works in order to provide a generic and expandable solution for implementing large number of outputs SiPM array/PMT detectors. The underlying idea in AMIC architecture is to calculate the moments of the detected light distribution in an analog fashion. These moments provide information about energy, x/y position, etc. of the light distribution of the detected event. Moreover this means that a small set of signals contains most of the information of the event, thus reducing the number of channels to be acquired. This paper introduces a new front-end device AMIC2GR which implements the AMIC architecture improving the features of the former integrated devices. Higher bandwidth and filtering coefficient precision along with a lower noise allow to apply some detector enhancements. Inhomogeneity among detector elements throughout the array can be reduced. Depth of interaction measurements can be obtained from the light distribution analysis. Also a common trigger signal can be obtained for the whole detector array. Finally AMIC2GR preamplifier stage close to SiPM output signals optimizes signal to noise ratio, which allows to reduce SiPM gain by using lower operating voltages thus reducing dark noise.

  12. Optimal enhancement in conversion efficiency of crystalline Si solar cells using inverse opal photonic crystals as back reflectors

    NASA Astrophysics Data System (ADS)

    Chaouachi, A.; Chtourou, R.; M'nif, A.; Hamzaoui, A. H.

    2015-04-01

    The effect of using inverse opal photonic crystals as back reflectors on the power conversion efficiency of c-Si solar cells is investigated. The reflection spectra of inverse opal photonic crystals with different diameters of air spheres are simulated using the finite difference time domain (FDTD) method. The reflection peaks are correlated with photonic band gaps present in the photonic band gap diagram. Significant improvement in the optical absorption of the crystalline silicon layer is recorded when inverse opal photonic crystals are considered. Physical mechanisms which may contribute to the enhancement of the light absorption are underlined. With higher short-circuit current enhancement possible, and with no corresponding degradation in open-circuit voltage Voc or the fill factor, the power conversion efficiency is increased significantly when inverse opal photonic crystals are used as back reflectors with optimized diameter of air spheres.

  13. Skin friction measurement with partially exposed polymer dispersed liquid crystals

    NASA Technical Reports Server (NTRS)

    Parmar, D. S.; Holmes, H. K.

    1993-01-01

    Partially exposed polymer dispersed liquid crystal thin film (10-25 microns) deposited on a flat glass substrate has been used for the first time to measure skin friction. Utilizing the shear-stress-induced director reorientation in the partially exposed liquid-crystal droplets, optical transmission under crossed polarization has been measured as a function of the air flow differential pressure. Direct measurement of the skin friction with a skin friction drag balance, under the same aerodynamic conditions, lets us correlate the skin friction with optical transmission. This provides a unique technique for the direct measurement of skin friction from the transmitted light intensity. The results are in excellent agreement with the model suggested in this paper.

  14. Robust Population Transfer by Stimulated Raman Adiabatic Passage in a Pr{sup 3+}:Y{sub 2}SiO{sub 5} Crystal

    SciTech Connect

    Klein, Jens; Beil, Fabian; Halfmann, Thomas

    2007-09-14

    We report on the experimental implementation of stimulated Raman adiabatic passage (STIRAP) in a Pr{sup 3+}:Y{sub 2}SiO{sub 5} crystal. Our data provide clear and striking proof for nearly complete population inversion between hyperfine levels in the Pr{sup 3+} ions. The transfer efficiency was monitored by absorption spectroscopy. Time-resolved absorption measurements serve to monitor the adiabatic population dynamics during the STIRAP process. Efficient transfer is observed for negative pulse delays (STIRAP), as well as for positive delays. We identify the latter by an alternative adiabatic passage process.

  15. Spectroscopic study and laser operation of Cr 4+-doped (Sr,Ca)Gd 4(SiO 4) 3O single crystals

    NASA Astrophysics Data System (ADS)

    Moncorgé, R.; Manaa, H.; Deghoul, F.; Borel, C.; Wyon, Ch.

    1995-02-01

    Cr-doped oxyapatite single crystals with formula AGd 4(SiO 4) 3O and A = Sr or Ca were grown and studied. The shape and the intensity of their optical absorption and fluorescence bands as well as the values and the temperature variations of the fluorescence lifetimes are characteristic of those of tetrahedrally coordinated Cr 4+ ions. Gain measurements show their potential wavelength tunability between about 1.2 and 1.5 μm. Room temperature laser action is demonstrated at 1.37 and 1.44 μm in the Ca- and Sr-compounds, respectively.

  16. Inclusion Analysis and Absorption Measurement in Nonlinear Crystals

    SciTech Connect

    Smith, L L

    2005-08-26

    Yttrium calcium oxyborate (YCOB) is a newly developed nonlinear optical crystal used for second harmonic generation in the Mercury laser. As with any new crystal, optical characterization of the material properties needs to be fully investigated. We are developing two new techniques to detect inclusions and measure optical absorption. With the side illuminating detection examination (SIDE) method, we hope to identify and map the size, density, and the morphology of inclusions. The multi-pass absorption technique (MPAT) will be used to help determine the absorption coefficient of various finished crystalline pieces at near-infrared wavelengths.

  17. Crystal structures of RPt{sub 3-x}Si{sub 1-y}(R=Y, Tb, Dy, Ho, Er, Tm, Yb) studied by single crystal X-ray diffraction

    SciTech Connect

    Gribanov, Alexander; Grytsiv, Andriy; Rogl, Peter; Seropegin, Yurii; Giester, Gerald

    2009-07-15

    The crystal structures of ternary compounds RPt{sub 3-x}Si{sub 1-y}(R=Y, Tb, Dy, Ho, Er, Tm, Yb) have been elucidated from X-ray single crystal CCD data. All compounds are isotypic and crystallize in the tetragonal space group P4/mbm. The general formula RPt{sub 3-x}Si{sub 1-y} arises from defects: x{approx}0.20, y{approx}0.14. The crystal structure of RPt{sub 3-x}Si{sub 1-y} can be considered as a packing of four types of building blocks which derive from the CePt{sub 3}B-type unit cell by various degrees of distortion and Pt, Si-defects. - Graphical Abstract: Electron density in RPt{sub 3-x}Si{sub 1-y} at 0, 1/2 , 0.

  18. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

    PubMed

    Medvid, Artur; Onufrijevs, Pavels; Jarimaviciute-Gudaitiene, Renata; Dauksta, Edvins; Prosycevas, Igoris

    2013-01-01

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms' redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones.

  19. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    PubMed Central

    2013-01-01

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms’ redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones. PMID:23735193

  20. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    NASA Astrophysics Data System (ADS)

    Medvid, Artur; Onufrijevs, Pavels; Jarimaviciute-Gudaitiene, Renata; Dauksta, Edvins; Prosycevas, Igoris

    2013-06-01

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms' redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones.

  1. Magnetic Field Induced Phase Transitions in Gd5(Si1.95Ge2.05)Single Crystal and the Anisotropic Magnetocaloric Effect

    SciTech Connect

    H. Tang; V.K. Pecharsky; A.O. Pecharsky; D.L. Schlagel; T.A. Lograsso; K.A. Gschneidner,jr.

    2004-09-30

    The magnetization measurements using a Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with the magnetic field applied along three crystallographic directions, [001], [010] and [100], were carried out as function of applied field (0-56 kOe) at various temperatures ({approx}5-320 K). The magnetic-field induced phase transformations at temperature above the zero-field critical temperature, i.e. the paramagnetic (PM) {leftrightarrow} ferromagnetic (FM) transitions with application or removal of magnetic field, are found to be temperature dependent and hysteretic. The corresponding critical fields increase with increasing temperature. The magnetic field (H)-temperature (T) phase diagrams have been constructed for the Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with field along the three directions. A small anisotropy has been observed. The magnetocaloric effect (MCE) has been calculated from the isothermal magnetization data, and the observed anisotropy correlates with H-T phase diagrams. The results are discussed in connection with the magnetic-field induced martensitic-like structural transition observed in the Gd{sub 5}(Si{sub 2}Ge{sub 2})-type compounds.

  2. The growth and thermal, electrical properties characterization of Ba2TiSi2O8 piezoelectric crystal

    NASA Astrophysics Data System (ADS)

    Cao, Shuoliang; Jiang, Bohan; Zheng, Yanqing; Tu, Xiaoniu; Xiong, Kainan; Gao, Pan; Shi, Erwei

    2016-10-01

    Ba2TiSi2O8 (BTS) crystals were successfully grown by the Czochralski method. The raw material ratio was optimized according to the effective segregation coefficient keff of different components in the BTS crystal. The thermal properties of the BTS crystal were systematically studied at elevated temperature, including thermal expansion, specific heat, thermal diffusivity and thermal conductivity. The variations of the thermal expansion coefficients α 33 and α 11 in the temperature range of 25-185 °C were small, whereas those in the temperature range of 185-1000 °C were 17.14×10-6/°C and 4.73×10-6/°C, respectively. A strong anisotropic characteristic in the thermal expansion ratio is associated with the lamellar structure of the BTS crystal. The thermal conductivity increased slowly as the temperature rises. The piezoelectric strain constant d33 of the BTS crystal was determined to be 4.5 pC/N at room temperature using a quasi-static d33 meter. The electrical resistivity of the BTS crystal was investigated at temperatures up to 900 °C, the resistivity ρr of the BTS Z-cut sample was 2.06×109 Ω cm at 800 °C, which is three orders of magnitude higher than that of a Ca3TaGa3Si2O14 (langasite-type crystal) X-cut sample (7.15×106 Ω cm) at the same temperature. Thermal and electrical properties have shown that BTS crystal is a potential alternative material for the high temperature piezoelectric sensors.

  3. Investigaction of Switching Behavior in a Ferroelectric Liquid Crystal Aligned on Obliquely Deposited SiO Films

    NASA Astrophysics Data System (ADS)

    Yamada, Yuichiro; Yamamoto, Norio; Inoue, Tetsuya; Orihara, Hiroshi; Ishibashi, Yoshihiro

    1989-01-01

    The effect of oblique evaporation of SiO on the chevron structure and the switching behavior in a ferroelectric liquid crystal have been investigated by means of the X-ray diffraction and the stroboscopic micrographs. It is found experimentally that the chevron direction and the domain structure appearing during the switching are determined by the direction of incidence of evaporated SiO. On the basis of the experimental results, it is clarified that the bow and the stern of the boat-shaped domain correspond to {+}2π and {-}2π internal disclinations, respectively. The structure of the zig-zag defect is determined.

  4. Synthesis, crystal structure and thermoelectric properties of a new carbide Zr 2[Al 3.56Si 0.44]C 5

    NASA Astrophysics Data System (ADS)

    Fukuda, Koichiro; Hisamura, Miyuki; Iwata, Tomoyuki; Tera, Nobuyuki; Sato, Kimiyasu

    2007-06-01

    A new quaternary layered carbide, Zr 2[Al 3.56Si 0.44]C 5, has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and thermopower and electrical conductivity measurements. The crystal structure was successfully determined using direct methods, and further refined by the Rietveld method. The crystal is trigonal (space group R3 m, Z=3) with lattice dimensions of a=0.331059(5), c=4.09450(5) nm and V=0.38864(1) nm 3. The final reliability indices calculated from the Rietveld refinement were Rwp=6.24%, Rp=4.21% and RB=0.82%. The crystal structure is composed of electroconductive NaCl-type ZrC slabs separated by Al 4C 3-type [Al 3.56Si 0.44]C 3 layers. This material had thermoelectric properties superior to those of the ternary layered carbides Zr 2Al 3C 4 and Zr 3Al 3C 5, with the power factor reaching 7.6×10 -5W m -1 K -2.

  5. The crystallization, magnetic and magnetocaloric properties in Fe 76.5-xNb xSi 15.5B 7Au 1 ribbons

    NASA Astrophysics Data System (ADS)

    Hoa, N. Q.; Gam, D. T. H.; Chau, N.; The, N. D.; Yu, S.-C.

    2007-03-01

    Fe 76.5-xNb xSi 15.5B 7Au 1 ribbons ( x=0.0, 1.5, 3.0, 4.5) have been fabricated by rapid quenching technique. The DSC measurements indicated that both first exothermal peak Tp1 (of α-Fe(Si) phase) and second peak Tp2 (of boride phase) as well as crystallization activation energy increase with increasing Nb content substituted, whereas saturation magnetization of samples decreases with x, due to ferromagnetic dilution. Besides, Curie temperature of amorphous phase decreases with x, i.e. Nb stabilizes amorphous structure of ribbons. The investigation of magnetic entropy change of studied samples showed that it may lead to magnetocaloric effect around respective Curie temperature of amorphous phase.

  6. Optimal azimuthal orientation for Si(111) double-crystal monochromators to achieve the least amount of glitches in the hard X-ray region.

    PubMed

    Tang, Zheng; Zheng, Lirong; Chu, Shengqi; Wu, Min; An, Pengfei; Zhang, Long; Hu, Tiandou

    2015-09-01

    Simulations of the periods, split regularities and mirror symmetries of the glitch pattern of a Si(111) crystal along with the azimuthal angles are presented. The glitch patterns of Si(111) double-crystal monochromators (DCMs) are found to be the superposition of the two sets of glitch patterns from the two crystals. The optimal azimuthal orientation ϕ1,2 = [(2n+1)π]/6 (n = 0, ±1, ±2…) for Si(111) DCMs to achieve the least amount of glitches in the hard X-ray region has been suggested.

  7. Determination of struvite crystallization mechanisms in urine using turbidity measurement.

    PubMed

    Triger, Aurélien; Pic, Jean-Stéphane; Cabassud, Corinne

    2012-11-15

    Sanitation improvement in developing countries could be achieved through wastewater treatment processes. Nowadays alternative concepts such as urine separate collection are being developed. These processes would be an efficient way to reduce pollution of wastewater while recovering nutrients, especially phosphorus, which are lost in current wastewater treatment methods. The precipitation of struvite (MgNH(4)PO(4)∙6H(2)O) from urine is an efficient process yielding more than 98% phosphorus recovery with very high reaction rates. The work presented here aims to determine the kinetics and mechanisms of struvite precipitation in order to supply data for the design of efficient urine treatment processes. A methodology coupling the resolution of the population balance equation to turbidity measurement was developed, and batch experiments with synthetic and real urine were performed. The main mechanisms of struvite crystallization were identified as crystal growth and nucleation. A satisfactory approximation of the volumetric crystal size distribution was obtained. The study has shown the low influence on the crystallization process of natural organic matter contained in real urine. It has also highlighted the impact of operational parameters. Mixing conditions can create segregation and attrition which influence the nucleation rate, resulting in a change in crystals number, size, and thus final crystal size distribution (CSD). Moreover urine storage conditions can impact urea hydrolysis and lead to spontaneous struvite precipitation in the stock solution also influencing the final CSD. A few limits of the applied methodology and of the proposed modelling, due to these phenomena and to the turbidity measurement, are also discussed.

  8. A novel method for measurement of crystal growth rate

    NASA Astrophysics Data System (ADS)

    Kim, Do Yeon; Yang, Dae Ryook

    2013-06-01

    A new method for measurement of crystal growth rate is proposed, in an attempt to make the measuring of growth rate more convenient than the existing methods. In this newly proposed method, the point of nucleation under a constant cooling rate condition was measured as changing the amount of seeds. The growth kinetics parameters were then estimated using the experimental data to match the points of nucleation. Experiments were performed with potash alum in the water system and growth kinetic parameters were estimated. Compared with existing results, the proposed method showed tolerable discrepancy in the growth kinetic parameters. The proposed method can be an alternative technique for measurement of growth rate.

  9. Prediction method of basic domain structure in Fe3%Si(110) single crystal with grooved surface

    SciTech Connect

    Iwata, K.; Fujikura, M.; Arai, S.; Ishiyama, K.

    2014-05-07

    This paper proposes the method to accurately predict the 180° basic domain width (D{sub w}) in demagnetized states of the grooved Fe3%Si(110) single crystal with the tilt angle of [001] out of the sheet surface (β). The evaluation of D{sub w} enables the estimation of the anomalous eddy current losses. In this paper, D{sub w} is optimized to minimize the magnetic Gibbs free energy represented by vector potentials using the finite element method and the conjugate gradient method. The μ*-method is adopted to approximate the magnetization relaxation. The stray field energy generated by the magnetic charges occurring on both grooves cross section and sheet surfaces is considered in our proposed method. The validity of the proposed method was confirmed by comparison with the observed D{sub w}. As a result, we could reveal the β dependence of D{sub w} against the groove depth. Moreover, the theoretical threshold of the domain refinement due to the grooves has been suggested.

  10. Dependence of high-order-harmonic generation on dipole moment in Si O2 crystals

    NASA Astrophysics Data System (ADS)

    Yu, Chao; Zhang, Xirui; Jiang, Shicheng; Cao, Xu; Yuan, Guanglu; Wu, Tong; Bai, Lihua; Lu, Ruifeng

    2016-07-01

    High-order-harmonic generation in α-quartz Si O2 is theoretically investigated under a strong laser field by solving the extended semiconductor Bloch equations. The accurate band structures as well as dipole moments between different bands are obtained from state-of-the-art first-principles calculations. We find that the shapes of k -space-dependent dipole moments play an important role in harmonic generation. The calculated results show that harmonic conversion efficiency is significantly enhanced and the cutoff energy is distinctly increased when the dipole moments change greatly along a valley in the k direction in the solid. Based on that dependence on the dipole moment, we also show that symmetry groups greatly affect the harmonic spectra from the solid materials. Moreover, a two-color synthesized field is used to achieve a supercontinuum harmonic spectrum near the cutoff region, and isolated attosecond pulses can be obtained directly by filtering out the harmonic radiation. We hope the contribution presented in this work provides a useful reference for future studies on laser-crystal interactions.

  11. Stopping power measurements of He ions in Si and SiC by time-of-flight spectrometry

    SciTech Connect

    Zhang, Yanwen; Jensen, Jens; Possnert, Goran; Grove, David A.; Bae, In-Tae; Weber, William J.

    2007-08-01

    Electronic energy loss is the fundamental mechanism accountable for the response of materials to ions. Helium particles are a product from alpha decay in nuclear waste materials, and helium ions are widely used as projectiles in ion beam analysis. Current work introduces a straightforward approach to determine electronic stopping powers of He ions in Si and SiC over a continuous range of energies. In transmission geometry, the energy loss of He ions in self-supporting stopping foils of Si and SiC is measured using a Time-of-Flight (TOF) set-up. The energy of individual heavy ions prior to impingement on the foil is determined from its TOF data; the exit energy after the stopping foil is essentially measured using the Si detector, for which every channel has been calibrated using TOF data without the stopping foil present. The measured stopping powers demonstrate excellent repeatability of this experimental approach and good reliability as compared with pervious data from the literature and theoretical predictions.

  12. A molecular dynamics study of the growth rate of SiC crystal and its dependence on the temperature

    NASA Astrophysics Data System (ADS)

    Zhou, Naigen; Zhang, Chi; Zeng, Xiang; Yuan, Jiren; Zhou, Lang

    2016-07-01

    Molecular dynamics simulations of crystal growth of SiC in the reduced temperature range of 0.51-1.02 have been carried out. In particular, the relationship between the growth rate and the reduced temperature has been investigated by the simulations. The results show that the growth rate increases first with the temperature and then decreases dramatically after passing through a maximum. Calculations of the growth rate according to the Wilson-Frenkel model have been applied to the present system, with the required parameters of the activation energy for atomic diffusion and the free energy changes calculated by molecular dynamics simulations. The temperature dependence of the growth rate, calculated by molecular dynamics, agrees with the prediction of Wilson-Frenkel model, indicating that the crystal growth of SiC is a kind of diffusion limited growth.

  13. Particle size measurement for the control of industrial crystallizers

    NASA Astrophysics Data System (ADS)

    Boxman, A.

    1992-01-01

    The need for on-line sensors to monitor particulate processes is rapidly increasing. Such systems are a necessity to understand the complex phenomena of particle formation, growth, and breakage. Some aspects of the design of an on-line sensor for particle size analysis are discussed. The technique used is based on forward light scattering, which covers a size range from about 1 to 2,000 micrometers. The observations are used to develop a physical model and subsequently an effective control strategy for a 970 liter continuous crystallizer. The purpose of the controller is to manipulate the dynamics of the size distribution. Therefore, a firm relation between process inputs and outputs (i.e., the crystal size distribution) must first be established. Secondly, an intelligent interpretation of the recorded data, in this case a light scattering pattern, is required. Chapter headings include the following: Validation of Light Scattering Models for Polydisperse Particle Systems; Deconvolution Algorithm for the Recovery of Particle Size Distributions; Automated Measurement and Interpretation of Scattering Patterns; On-line Measurement of Crystal Size Distribution in Industrial Crystallizers.

  14. Interaction of Ni90Ti10 alloy thin film with 6H-SiC single crystal

    NASA Astrophysics Data System (ADS)

    Levit, M.; Grimberg, I.; Weiss, B.-Z.

    1996-07-01

    Interfacial reactions, phase formation, microstructure, and composition, as functions of heat treatments (400-800 °C) were investigated in Ni90Ti10 alloy thin film coevaporated on an n-type 6H-SiC (0001) single-crystal substrate. The study was carried out with the aid of Auger electron spectroscopy, x-ray diffraction, and analytical transmission electron microscopy. The interaction was found to begin at 450 °C. Ni and C are the dominant diffusing species. The reaction zone is divided into three layers. In the first layer, adjacent to the SiC substrate, the presence of Ni-rich silicide, Ni2Si, and C precipitates, was observed. The second layer is composed mainly of TiC, while the third consists of Ni2Si. This composite structure, consisting of the silicide as a low resistivity ohmic contact, and of the carbide as a diffusion barrier, promises high-temperature stability crucial to ohmic contact development for SiC technology. Factors controlling phase formation in the Ni-Ti/SiC system are discussed.

  15. Crystal structure and magnetic properties of GdSi1.78, Gd(Si0.684Ge0.316)1.78, GdGe1.57, and GdSn2 compounds

    NASA Astrophysics Data System (ADS)

    Zou, J. D.; Liu, J.; Yan, M.

    2015-07-01

    Intermetallic compounds of Gd with Si, Ge, and Sn near 1:2 stoichiometry adopt several closely related crystal structures. We find that GdSi1.78 and Gd(Si0.684Ge0.316)1.78 crystallize in the same GdSi1.4-type orthorhombic structure (space group Imma), while GdGe1.57 and GdSn2 adopt α-ThSi2-type tetragonal structure (space group I41/amd) and ZrSi2-type orthorhombic structure (space group Cmcm), respectively. All compounds order antiferromagnetically; their Néel temperatures are only weakly affected by the magnetic field of less than 50 kOe. Unusual features are observed including multiple phase transitions and thermomagnetic irreversibilities.

  16. Side readout of long scintillation crystal elements with digital SiPM for TOF-DOI PET

    SciTech Connect

    Yeom, Jung Yeol E-mail: cslevin@stanford.edu; Vinke, Ruud; Levin, Craig S. E-mail: cslevin@stanford.edu

    2014-12-15

    Purpose: Side readout of scintillation light from crystal elements in positron emission tomography (PET) is an alternative to conventional end-readout configurations, with the benefit of being able to provide accurate depth-of-interaction (DOI) information and good energy resolution while achieving excellent timing resolution required for time-of-flight PET. This paper explores different readout geometries of scintillation crystal elements with the goal of achieving a detector that simultaneously achieves excellent timing resolution, energy resolution, spatial resolution, and photon sensitivity. Methods: The performance of discrete LYSO scintillation elements of different lengths read out from the end/side with digital silicon photomultipliers (dSiPMs) has been assessed. Results: Compared to 3 × 3 × 20 mm{sup 3} LYSO crystals read out from their ends with a coincidence resolving time (CRT) of 162 ± 6 ps FWHM and saturated energy spectra, a side-readout configuration achieved an excellent CRT of 144 ± 2 ps FWHM after correcting for timing skews within the dSiPM and an energy resolution of 11.8% ± 0.2% without requiring energy saturation correction. Using a maximum likelihood estimation method on individual dSiPM pixel response that corresponds to different 511 keV photon interaction positions, the DOI resolution of this 3 × 3 × 20 mm{sup 3} crystal side-readout configuration was computed to be 0.8 mm FWHM with negligible artifacts at the crystal ends. On the other hand, with smaller 3 × 3 × 5 mm{sup 3} LYSO crystals that can also be tiled/stacked to provide DOI information, a timing resolution of 134 ± 6 ps was attained but produced highly saturated energy spectra. Conclusions: The energy, timing, and DOI resolution information extracted from the side of long scintillation crystal elements coupled to dSiPM have been acquired for the first time. The authors conclude in this proof of concept study that such detector configuration has the potential to enable

  17. Al{sub 4}SiC{sub 4} wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

    SciTech Connect

    Pedesseau, L. E-mail: jacky.even@insa-rennes.fr; Even, J. E-mail: jacky.even@insa-rennes.fr; Durand, O.; Modreanu, M.; Chaussende, D.; Sarigiannidou, E.; Chaix-Pluchery, O.

    2015-12-01

    New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al{sub 4}SiC{sub 4}). A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al{sub 4}SiC{sub 4} material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al{sub 4}SiC{sub 4} material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.

  18. Measurement of Valley Kondo Effect in a Si/SiGe Quantum Dot

    NASA Astrophysics Data System (ADS)

    Yuan, Mingyun; Yang, Zhen; Tang, Chunyang; Rimberg, A. J.; Joynt, R.; Savage, D. E.; Lagally, M. G.; Eriksson, M. A.

    2013-03-01

    The Kondo effect in Si/SiGe QDs can be enriched by the valley degree of freedom in Si. We have observed resonances showing temperature dependence characteristic of the Kondo effect in two consecutive Coulomb diamonds. These resonances exhibit unusual magnetic field dependence that we interpret as arising from Kondo screening of the valley degree of freedom. In one diamond two Kondo peaks due to screening of the valley index exist at zero magnetic field, revealing a zero-field valley splitting of Δ ~ 0.28 meV. In a non-zero magnetic field the peaks broaden and coalesce due to Zeeman splitting. In the other diamond, a single resonance at zero bias persists without Zeeman splitting for non-zero magnetic field, a phenomenon characteristic of valley non-conservation in tunneling. This research is supported by the NSA and ARO.

  19. Crystal structure and luminescence of Sr 0.99Eu 0.01AlSiN 3

    NASA Astrophysics Data System (ADS)

    Watanabe, Hiromu; Yamane, Hisanori; Kijima, Naoto

    2008-08-01

    Strontium europium aluminum silicon nitride, Sr 0.99Eu 0.01AlSiN 3, was synthesized by heating a mixture of binary nitrides at 2173 K and a N 2 gas pressure of 190 MPa. Single crystals of Sr 0.99Eu 0.01AlSiN 3 approximately 30 μm were obtained. The structure was confirmed to be an isotypic structure of CaAlSiN 3 in the orthorhombic space group Cmc2 1, analyzed by single-crystal X-ray diffraction. The lattice parameters are a=9.843(3), b=5.7603(16), c=5.177(2) Å, cell volume=293.53(17) Å 3. It shows an orange-red photoluminescence by 5 d→4 f transition of Eu 2+ at around 610 nm under excitation ranging from ultraviolet to 525 nm. The photoluminescence intensity, temperature characteristics, and oxidative stability were comparable or superior to those of CaAlSiN 3:Eu 2+ phosphor.

  20. Thermal-expansion measurements for Lu5Ir4Si10, Lu5Rh4Si10, Sc5Ir4Si10, and Tm5Ir4Si10: Charge-density-wave effects

    NASA Astrophysics Data System (ADS)

    Swenson, C. A.; Shelton, R. N.; Klavins, P.; Yang, H. D.

    1991-04-01

    Linear-thermal-expansion measurements have determined the small relative length changes (ΔL/L~=-10-4) at the charge-density-wave (CDW) transitions in Lu5Ir4Si10, Lu5Rh4Si10, and Tm5Ir4Si10. Tm5Ir4Si10 shows a second sluggish transition near 18+/-8 K which is comparable in magnitude. Thermal-expansivity measurements show that, for each material, significant changes occur in lattice properties on cooling through the CDW transition. Expansivity data above the low-temperature ordering transitions for these three (Lu5Ir4Si10, Lu5Rh4Si10 superconducting; Tm5Ir4Si10, magnetic) and also for Sc5Ir4Si10 (no CDW, but superconducting) in combination with previous CP results show unusual electronic behavior (large electronic contributions to α for all except Lu5Ir4Si10), a positive lattice expansivity only for Lu5Ir4Si10, and a very large lattice expansivity for Tm5Ir4Si10. The lattice Grüneisen parameters for the superconducting compounds show significant temperature dependence. A comparison of the pressure dependences of the superconducting transition temperatures (dTc/dP) as calculated from the discontinuities in α and CP and as determined in high-pressure experiments suggests a complex Tc(P) behavior. The magnetic contributions to the expansivity of Tm5Ir4Si10 are consistent with different signs for dTc/dP for the 1.9-K ordering transition studied in these experiments and for the 0.86-K transition which has been observed in CP measurements.

  1. Orientational order parameter measurements of discotic liquid crystal

    NASA Astrophysics Data System (ADS)

    Kaur, Supreet; Raina, K. K.; Kumar, S.; Pratibha, R.

    2014-04-01

    The IR dichroism technique is a convenient method which can be used to measure the molecular order parameter corresponding to the IR bands exclusively present in the disc -like molecules in discotic liquid crystal (DLC). To measure orientational order parameter, homeotropic alignment of discotic liquid crystal was attained by slow cooling of sample from isotropic phase on untreated flat CaF2 substrate. The homeotropic alignment thus achieved was found to be thermodynamically stable in the discotic mesophase. IR spectra were recorded at different temperatures for the DLC. The order parameter was calculated by comparing the spectra of discotic phase with that of the isotropic phase. Order parameter has been presented as function of temperature for different significant IR bands present in the DLC.

  2. 'Crystal Collimator' Measurement of CESR particle-beam Source Size

    SciTech Connect

    Finkelstein, K.D.; Bazarov, Ivan; White, Jeffrey; Revesz, Peter

    2004-05-12

    We have measured electron and positron beam source size at CHESS when the Cornell Electron Storage Ring (CESR) is run dedicated for the production of synchrotron radiation. Horizontal source size at several beamlines is expected to shrink by a factor of two but synchrotron (visible) light measurements only provide the vertical size. Therefore a 'crystal collimator' using two Bragg reflection in dispersive (+,+) orientation has been built to image the horizontal (vertical) source by passing x-rays parallel to within 5 microradians to an imaging screen and camera. With the 'crystal collimator' we observe rms sizes of 1.2 mm horizontal by 0.28 mm vertical, in good agreement with the 1.27 mm size calculated from lattice functions, and 0.26 mm observed using a synchrotron light interferometer.

  3. Orientational order parameter measurements of discotic liquid crystal

    SciTech Connect

    Kaur, Supreet; Raina, K. K.; Kumar, S.; Pratibha, R.

    2014-04-24

    The IR dichroism technique is a convenient method which can be used to measure the molecular order parameter corresponding to the IR bands exclusively present in the disc –like molecules in discotic liquid crystal (DLC). To measure orientational order parameter, homeotropic alignment of discotic liquid crystal was attained by slow cooling of sample from isotropic phase on untreated flat CaF{sub 2} substrate. The homeotropic alignment thus achieved was found to be thermodynamically stable in the discotic mesophase. IR spectra were recorded at different temperatures for the DLC. The order parameter was calculated by comparing the spectra of discotic phase with that of the isotropic phase. Order parameter has been presented as function of temperature for different significant IR bands present in the DLC.

  4. Ca(Ti,Si)O3 Diamond Inclusions Crystallized From Carbonate Melts in the Transition Zone: Experimental Constraints

    NASA Astrophysics Data System (ADS)

    Armstrong, L. S.; Walter, M. J.; Keshav, S.; Bulanova, G.; Pickles, J.; Lord, O. T.; Lennie, A.

    2007-12-01

    Composite diamond inclusions consisting of coexisting endmember CaSiO3 and CaTiO3 are rare but occur in diamond populations from Juina, Brazil1-2. Phase relations show that above ~9 GPa (at 1500 K) a perovskite-structured solid solution exists between these endmembers, while at lower pressures intermediate compositions produce coexisting CaTiO3-perovskite and CaSiO3 in the walstromite structure3. Inclusions with `perovskite' stoichiometry are commonly interpreted as fragments of solid mantle from the transition zone or lower mantle4-6. Here we report on two composite diamond inclusions from Juina kimberlite, and can effectively eliminate a subsolidus origin on the basis of experimental mineral phase relations. Instead, based on new melting experiments we find that the inclusions most likely crystallized directly from Ca-rich carbonate melts. Like other workers1-2 we interpret the composite inclusions as exsolution products of a high-pressure Ca(Ti,Si)O3 perovskite stable in the transition zone. Our bulk inclusion compositions are estimated to contain 50- 65 mol% CaTiO3, and are remarkably low in MgSiO3 component at less than 0.2 mol%. Experiments have shown that in peridotite or eclogite lithologies, Ca-rich perovskite in equilibrium with an MgSiO3-phase (majorite or Mg-perovskite) have about 3 to 7 mol% MgSiO37-8. Here we report on new subsolidus laser-heated diamond anvil cell experiments at 20-50 GPa in the ternary system CaSiO3-CaTiO3-MgSiO3 that bracket the CaTi-rich limb of the solvus between Ca- and Mg-rich perovskites. All experiments were made at 2000 (±200) K for 45-75 min, and were analysed using synchrotron micro-focus X-ray diffraction. We find that the solubility of MgSiO3 in CaTi-perovskite solid solutions increases significantly with increasing CaTiO3 component. Thus, Ti-rich calcium perovskite in peridotite or eclogite lithologies should have very high, not exceptionally low, MgSiO3 component. Accordingly, a subsolidus paragenesis is unlikely for

  5. Fabrication of FCC-SiO{sub 2} colloidal crystals using the vertical convective self-assemble method

    SciTech Connect

    Castañeda-Uribe, O. A.; Salcedo-Reyes, J. C.; Méndez-Pinzón, H. A.; Pedroza-Rodríguez, A. M.

    2014-05-15

    In order to determine the optimal conditions for the growth of high-quality 250 nm-SiO{sub 2} colloidal crystals by the vertical convective self-assemble method, the Design of Experiments (DoE) methodology is applied. The influence of the evaporation temperature, the volume fraction, and the pH of the colloidal suspension is studied by means of an analysis of variance (ANOVA) in a 3{sup 3} factorial design. Characteristics of the stacking lattice of the resulting colloidal crystals are determined by scanning electron microscopy and angle-resolved transmittance spectroscopy. Quantitative results from the statistical test show that the temperature is the most critical factor influencing the quality of the colloidal crystal, obtaining highly ordered structures with FCC stacking lattice at a growth temperature of 40°C.

  6. Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

    NASA Astrophysics Data System (ADS)

    Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2016-10-01

    {100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

  7. Intrinsic carrier multiplication efficiency in bulk Si crystals evaluated by optical-pump/terahertz-probe spectroscopy

    SciTech Connect

    Yamashita, G.; Nagai, M. E-mail: ashida@mp.es.osaka-u.ac.jp; Ashida, M. E-mail: ashida@mp.es.osaka-u.ac.jp; Matsubara, E.; Kanemitsu, Y.

    2014-12-08

    We estimated the carrier multiplication efficiency in the most common solar-cell material, Si, by using optical-pump/terahertz-probe spectroscopy. Through close analysis of time-resolved data, we extracted the exact number of photoexcited carriers from the sheet carrier density 10 ps after photoexcitation, excluding the influences of spatial diffusion and surface recombination in the time domain. For incident photon energies greater than 4.0 eV, we observed enhanced internal quantum efficiency due to carrier multiplication. The evaluated value of internal quantum efficiency agrees well with the results of photocurrent measurements. This optical method allows us to estimate the carrier multiplication and surface recombination of carriers quantitatively, which are crucial for the design of the solar cells.

  8. Polar nephelometer for light-scattering measurements of ice crystals.

    PubMed

    Barkey, B; Liou, K N

    2001-02-15

    We report on a small, lightweight polar nephelometer for the measurement of the light-scattering properties of cloud particles, specifically designed for use on a balloonborne platform in cirrus cloud conditions. The instrument consists of 33 fiber-optic light guides positioned in a two-dimensional plane from 5 degrees to 175 degrees that direct the scattered light to photodiode detectors-amplifier units. The system uses an onboard computer and data acquisition card to collect and store the measured signals. The instrument's calibration is tested by measurement of light scattered into a two-dimensional plane from small water droplets generated by an ultrasonic humidifier. Excellent comparisons between the measured water-droplet scattering properties and expectations generated by Mie calculation are shown. The measured scattering properties of ice crystals generated in a cold chamber also compare reasonably well with the theoretical results based on calculations from a unified theory of light scattering by ice crystals that use the particle size distribution measured in the chamber. PMID:18033557

  9. Polar nephelometer for light-scattering measurements of ice crystals.

    PubMed

    Barkey, B; Liou, K N

    2001-02-15

    We report on a small, lightweight polar nephelometer for the measurement of the light-scattering properties of cloud particles, specifically designed for use on a balloonborne platform in cirrus cloud conditions. The instrument consists of 33 fiber-optic light guides positioned in a two-dimensional plane from 5 degrees to 175 degrees that direct the scattered light to photodiode detectors-amplifier units. The system uses an onboard computer and data acquisition card to collect and store the measured signals. The instrument's calibration is tested by measurement of light scattered into a two-dimensional plane from small water droplets generated by an ultrasonic humidifier. Excellent comparisons between the measured water-droplet scattering properties and expectations generated by Mie calculation are shown. The measured scattering properties of ice crystals generated in a cold chamber also compare reasonably well with the theoretical results based on calculations from a unified theory of light scattering by ice crystals that use the particle size distribution measured in the chamber.

  10. Crystal structure of Si-doped HfO{sub 2}

    SciTech Connect

    Zhao, Lili; Nelson, Matthew; Fancher, Chris M.; Aldridge, Henry; Iamsasri, Thanakorn; Forrester, Jennifer S.; Jones, Jacob L.; Nishida, Toshikazu; Moghaddam, Saeed

    2014-01-21

    Si-doped HfO{sub 2} was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO{sub 2} was determined as less than 9 at. %. A second phase was identified as Cristobalite (SiO{sub 2}) rather than HfSiO{sub 4}, the latter of which would be expected from existing SiO{sub 2}-HfO{sub 2} phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO{sub 2} shows that c/b increases, while β decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

  11. Electron density distribution and disordered crystal structure of 15R-SiAlON, SiAl{sub 4}O{sub 2}N{sub 4}

    SciTech Connect

    Banno, Hiroki; Hanai, Takaaki; Asaka, Toru; Kimoto, Koji; Fukuda, Koichiro

    2014-03-15

    The crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} was characterized by laboratory X-ray powder diffraction (CuKα{sub 1}). The title compound is trigonal with space group R3-bar m. The hexagonal unit-cell dimensions (Z=3) are a=0.301332(3) nm, c=4.18616(4) nm and V=0.3291825(5) nm{sup 3}. The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of one of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=5.05%, S (=R{sub wp}/R{sub e})=1.21, R{sub p}=3.77%, R{sub B}=1.29% and R{sub F}=1.01%. The disordered crystal structure was successfully described by overlapping three types of domains with ordered atom arrangements. The distribution of atomic positions in one of the three types of domains can be achieved in the space group R3-bar m. The atom arrangements in the other two types of domains are noncentrosymmetrical with the space group R3m. These two structural configurations are related by the pseudo-symmetry inversion. -- Graphical abstract: A bird's eye view of electron densities up to 75.3% (0.133 nm{sup −3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of SiAl{sub 4}O{sub 2}N{sub 4}. Highlights: • Crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping three types of domains with ordered atom arrangements.

  12. The systems Sr-Zn-{l_brace}Si,Ge{r_brace}: Phase equilibria and crystal structure of ternary phases

    SciTech Connect

    Romaka, V.V.; Falmbigl, M.; Grytsiv, A.; Rogl, P.

    2012-02-15

    Phase relations have been established by electron probe microanalysis (EPMA) and X-ray powder diffraction (XPD) for the Sr-poor part of the ternary systems Sr-Zn-Si at 800 Degree-Sign C and Sr-Zn-Ge at 700 Degree-Sign C. In the Sr-Zn-Si system one new ternary compound SrZn{sub 2+x}Si{sub 2-x} (0{<=}x{<=}0.45) with CeAl{sub 2}Ga{sub 2} structure and a statistical mixture of Zn/Si in the 4e site was found. Neither a type-I nor a type-IX clathrate phase was encountered. This system is characterized by formation of two further phases, i.e. SrZn{sub 1-x}Si{sub 1+x} with ZrBeSi-type (0.16{<=}x{<=}0.22) and SrZn{sub 1-x}Si{sub 1+x} with AlB{sub 2}-type (0.35{<=}x{<=}0.65) with a random distribution of Zn/Si atoms in the 2c site. For the Sr-Zn-Ge system, the homogeneity regions of the isotypic phases SrZn{sub 1-x}Ge{sub 1+x} with ZrBeSi-type (0{<=}x{<=}0.17) and AlB{sub 2}-type (0.32{<=}x{<=}0.56), respectively, have been determined. Whereas the germanide SrZn{sub 2+x}Ge{sub 2-x} (CeAl{sub 2}Ga{sub 2}-type) is characterized by a homogeneity region (0{<=}x{<=}0.5), the clathrate type-I phase Sr{sub 8}Zn{sub 8}Ge{sub 38} shows a point composition. - Graphical abstract: Phase equilibria of ternary compounds in the Sr-Zn-Si-system at 800 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Phase equilibria in the Sr-Zn-Si-system are established at 800 Degree-Sign C. Black-Right-Pointing-Pointer Phase equilibria in the Sr-Zn-Ge-system are established at 700 Degree-Sign C. Black-Right-Pointing-Pointer Crystal structures of the ternary compounds were confirmed by X-ray powder diffraction. Black-Right-Pointing-Pointer All ternary compounds except the clathrate-I in the Ge-system are characterized by a homogeneity region.

  13. Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates

    NASA Astrophysics Data System (ADS)

    Argunova, T. S.; Gutkin, M. Yu.; Mokhov, E. N.; Kazarova, O. P.; Lim, J.-H.; Shcheglov, M. P.

    2015-12-01

    The problem of prevention of AlN crystal layers from cracking under action of thermoelastic stresses during growth of these layers on SiC substrates has been studied. Calculation of residual thermoelastic stresses in AlN/SiC double-layer system has shown that cracking of the AlN layer during cooling is inevitable until this layer becomes at least 15 times thicker than a substrate. The required ratio of the thicknesses of the layer and the substrate can be reached by growing an AlN layer with simultaneous evaporation of the SiC substrate. Experimentally performed evaporation of SiC substrates in one process with growing AlN single layers on them using the sublimation sandwich method has made it possible to prevent these layers from cracking. Continuous (non-cracked) plates with 0.2-0.8 mm thickness without substrates have been obtained as a result of these experiments. According to X-ray images obtained in synchrotron radiation, they consist of single crystalline AlN of 2H polytype, contain dislocations, but do not contain cracks. The degree of crystallinity of these thin plates, which was estimated by the full widths at half-maximum of rocking curves of X-ray diffraction reflections, corresponds to the degree of crystallinity of thick (3-5 mm) AlN layers grown on nonevaporated SiC substrates.

  14. Li3AlSiO5: the first aluminosilicate as a potential deep-ultraviolet nonlinear optical crystal with the quaternary diamond-like structure.

    PubMed

    Chen, Xinglong; Zhang, Fangfang; Liu, Lili; Lei, Bing-Hua; Dong, Xiaoyu; Yang, Zhihua; Li, Hongyi; Pan, Shilie

    2016-02-14

    Deep-ultraviolet (deep-UV) nonlinear optical (NLO) crystals play a crucial role in modern laser frequency conversion technology. Traditionally, the exploration of deep-UV NLO crystals is mainly focused on borates, while, the use of phosphates recently opened up a novel and promising non-boron pathway for designing new deep-UV NLO crystals. Extending this pathway to aluminosilicates led to the discovery of Li3AlSiO5, the first NLO crystal in this system. It crystallizes in the polar space group Pna21 (no. 33) with a quaternary diamond-like structure composed of LiO4, AlO4 and SiO4 tetrahedral groups. The compound exhibits a deep-UV cut-off edge below 190 nm and is phase matchable with moderate powder second harmonic generation (SHG) intensity (0.8KH2PO4). The band gap calculated using PBE0 is 7.29 eV, indicating that the cut-off edge of the Li3AlSiO5 crystal can be down to 170 nm. In addition, the compound is nonhygroscopic and thermally stable up to ∼1472 K. These results suggest that Li3AlSiO5 is a potential deep-UV NLO crystal. First-principles studies were performed to elucidate the structure-property relationship of Li3AlSiO5. PMID:26788988

  15. Correlated Protein Motion Measurements of Dihydrofolate Reductase Crystals

    NASA Astrophysics Data System (ADS)

    Xu, Mengyang; Niessen, Katherine; Pace, James; Cody, Vivian; Markelz, Andrea

    2014-03-01

    We report the first direct measurements of the long range structural vibrational modes in dihydrofolate reductase (DHFR). DHFR is a universal housekeeping enzyme that catalyzes the reduction of 7,8-dihydrofolate to 5,6,7,8-tetra-hydrofolate, with the aid of coenzyme nicotinamide adenine dinucleotide phosphate (NADPH). This crucial enzymatic role as the target for anti-cancer [methotrexate (MTX)], and other clinically useful drugs, has made DHFR a long-standing target of enzymological studies. The terahertz (THz) frequency range (5-100 cm-1), corresponds to global correlated protein motions. In our lab we have developed Crystal Anisotropy Terahertz Microscopy (CATM), which directly measures these large scale intra-molecular protein vibrations, by removing the relaxational background of the solvent and residue side chain librational motions. We demonstrate narrowband features in the anisotropic absorbance for mouse DHFR with the ligand binding of NADPH and MTX single crystals as well as Escherichia coli DHFR with the ligand binding of NADPH and MTX single crystals. This work is supported by NSF grant MRI2 grant DBI2959989.

  16. Energy loss distributions of 7 TeV protons axially channeled in the bent <1 1 0> Si crystal

    NASA Astrophysics Data System (ADS)

    Stojanov, Nace; Petrović, Srdjan

    2016-04-01

    In this article, the energy loss distributions of relativistic protons axially channeled in the bent <1 1 0> Si crystal are studied. The crystal thickness is equal to 1 mm, which corresponds to the reduced crystal thickness, Λ, equal to 1.22, whereas the bending angle, α, was varied from 0 to 30 μrad. The proton energy of 7 TeV was chosen in accordance with the concept of using the bent crystals as a tool for selective deflection of the beam halo particles from the LUA9 experiment at LHC. For the continuum interaction potential of the proton and the crystal the Molière's expression was used and the energy loss of a proton was calculated by applying the trajectory dependent stopping power model. Further, the uncertainness of the scattering angle of the proton caused by its collisions with the electrons of the crystal and the divergence of the proton beam were taken into account. The energy loss distribution of the channeled protons was obtained via the numerical solution of the proton equations of motion in the transverse plane and the computer simulation method. The analysis of the obtained theoretical data shows that the shape of the energy loss distribution strongly depends on the horizontal or vertical direction of the curvature of the crystal. The number of dechanneled protons as a function of the bending angle also strongly depends on the direction of the crystal's curvature. As a result, the dechanneling rates and ranges, obtained from the Gompertz type sigmoidal fitting functions, have different sets of values for different bending orientations. We have also studied the influence of the proton beam divergence on the energy loss distribution of channeled protons.

  17. Measurement of probability distributions for internal stresses in dislocated crystals

    SciTech Connect

    Wilkinson, Angus J.; Tarleton, Edmund; Vilalta-Clemente, Arantxa; Collins, David M.; Jiang, Jun; Britton, T. Benjamin

    2014-11-03

    Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called “restricted second moment of the probability distribution” can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.

  18. Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2014-01-01

    The impact of additional Pt and Ni monosilicide (NiSi) crystal orientation on channel stress from Ni silicide in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been demonstrated. The channel stress generation mechanism can be explained by the NiSi crystal orientation. In pure Ni silicide films, the channel stress in the p-type substrate is much larger than that in the n-type one, since the NiSi a-axis parallel to the channel direction is strongly aligned on the p-type substrate compared with on the n-type one. On the other hand, in NiPt silicide films, the difference in the channel stress between the p- and n-type substrates is small, because the NiSi crystal orientation on the p-type substrate is similar to that on the n-type one. These results can be explained by the Pt segregation at the interface between the NiSi film and the Si surface. Segregated Pt atoms cause the NiSi b-axis to align normal to the Si(001) surface in the nucleation step owing to the expansion of the NiSi lattice spacing at the NiSi/Si interface. Furthermore, the Pt segregation mechanism is considered to be caused by the grain boundary diffusion in the Ni2Si film during NiSi formation. We confirmed that the grains of Ni2Si on the p-type substrate are smaller than those on the n-type one. The Ni2Si film on the p-type substrate has more grain boundary diffusion paths than that on the n-type one. Therefore, the amount of Pt segregation at the NiSi/Si interface on the p-type substrate is larger than that on the n-type one. Consequently, the number of NiSi grains with the b-axis aligned normal to the Si(001) in the p-type substrate is larger than that in the n-type one. As a result, the channel stress induced by NiPt silicide in PMOS is larger than that in NMOS. According to this mechanism, controlling the Pt concentration at the NiSi/Si interface is one of the key factors for channel stress engineering.

  19. Analysis of grain structure evolution based on optical measurements of mc Si wafers

    NASA Astrophysics Data System (ADS)

    Strauch, Theresa; Demant, Matthias; Krenckel, Patricia; Riepe, Stephan; Rein, Stefan

    2016-11-01

    Grain structure and grain competition have a strong impact on bulk lifetime in multicrystalline (mc) silicon. A fast and thorough characterization of grain structure is crucial in order to improve industrial crystal growth. This work introduces key parameters of grain structure, extracted with a newly developed image processing tool. Four bricks grown with different concepts were chosen to investigate the value of the identified key parameters and to identify characteristic developments along the brick. Optical measurements on as-cut wafers from these bricks serve as a basis to extract grain structure properties, i.e., size, shape, homogeneity and distribution of grain size. By connecting the 2D-information over brick height, a statistical insight into the entire brick is gained. Weighted percentiles of grain area offer a robust measure to characterize grain size distribution. As twinning has a large impact on grain competition, twinned grains are detected via grain shape. Additionally, regions with strong grain competition are highlighted for investigations on grain overgrowth. It is found that the share of twin grains increases with brick height in high-performance mc (HPM) silicon with fine-granular seeds from almost zero up to about 15% whereas it remains rather constant over the whole brick height in standard mc-Si. The results of the investigated bricks show clearly that towards the brick top, the material differences in grain size decrease. This suggests that an energetically favorable state may exist for grain structure development.

  20. Magnetic field effects on ultrafast lattice compression dynamics of Si(111) crystal when excited by linearly-polarized femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Hatanaka, Koji; Odaka, Hideho; Ono, Kimitoshi; Fukumura, Hiroshi

    2007-03-01

    Time-resolved X-ray diffraction measurements of Si (111) single crystal are performed when excited by linearly-polarized femtosecond laser pulses (780 nm, 260 fs, negatively-chirped, 1 kHz) under a magnetic field (0.47 T). Laser fluence on the sample surface is 40 mJ/cm^2, which is enough lower than the ablation threshold at 200 mJ/cm^2. Probing X-ray pulses of iron characteristic X-ray lines at 0.193604 and 0.193998 nm are generated by focusing femtosecond laser pulses onto audio-cassette tapes in air. Linearly-polarized femtosecond laser pulse irradiation onto Si(111) crystal surface induces transient lattice compression in the picosecond time range, which is confirmed by transient angle shift of X-ray diffraction to higher angles. Little difference of compression dynamics is observed when the laser polarization is changed from p to s-pol. without a magnetic field. On the other hand, under a magnetic field, the lattice compression dynamics changes when the laser is p-polarized which is vertical to the magnetic field vector. These results may be assigned to photo-carrier formation and energy-band distortion.

  1. Neutron diffraction determination of hydrogen atom locations in the α(TiCrSiO) 1/1 crystal approximant

    NASA Astrophysics Data System (ADS)

    Kim, J. Y.; Kim, W. J.; Gibbons, P. C.; Kelton, K. F.; Yelon, W. B.

    1999-08-01

    Titanium/zirconium-based quasicrystals and their related crystal approximants have been identified as potential new materials for hydrogen storage applications. To better understand the local chemistry and atomic ordering in these phases, preferential interstitial sites for hydrogen/deuterium were determined for α(TiCrSiO). This is a bcc 1/1 crystal approximant to the icosahedral quasicrystal phase that contains a two-shell, Mackay-icosahedral cluster of atoms at each bcc site. It absorbs hydrogen or deuterium, without formation of other hydride phases, to a maximum hydrogen to metal atom ratio (H/M) of 0.26. For fully deuterated samples, both tetrahedral and octahedral interstitial sites are occupied with fractions of 0.14 and 0.12, respectively. Here, the hydrogen/deuterium sites are determined from a Rietveld analysis of x-ray and neutron powder diffraction data taken from samples of α(TiCrSiO) loaded with deuterium. Only the octahedral sites are occupied in the partially deuterated samples (D/M=0.11). A decrease in the oxygen concentration below the stoichiometric value for α(TiCrSiO) leads to an increase in the total amount of hydrogen that can be absorbed, suggesting that these interstitial atoms are competing for the same octahedral interstitial sites.

  2. The low-temperature crystal structure of the multiferroic melilite Ca2CoSi2O7.

    PubMed

    Sazonov, Andrew; Hutanu, Vladimir; Meven, Martin; Roth, Georg; Kézsmárki, István; Murakawa, Hiroshi; Tokura, Yoshinori; Náfrádi, Bálint

    2016-02-01

    In the antiferromagnetic ground state, below TN ≃ 5.7 K, Ca2CoSi2O7 exhibits strong magnetoelectric coupling. For a symmetry-consistent theoretical description of this multiferroic phase, precise knowledge of its crystal structure is a prerequisite. Here we report the results of single-crystal neutron diffraction on Ca2CoSi2O7 at temperatures between 10 and 250 K. The low-temperature structure at 10 K was refined assuming twinning in the orthorhombic space group P2(1)2(1)2 with a 3 × 3 × 1 supercell [a = 23.52 (1), b = 23.52 (1), c = 5.030 (3) Å] compared with the high-temperature normal state [tetragonal space group P42(1)m, a = b ≃ 7.86, c ≃ 5.03 Å]. The precise structural parameters of Ca2CoSi2O7 at 10 K are presented and compared with the literature X-ray diffraction results at 130 and 170 K (low-temperature commensurate phase), as well as at ∼ 500 K (high-temperature normal phase). PMID:26830804

  3. Crystal structure of Na2HfSi2O7 by Rietveld refinement

    PubMed Central

    Massoni, Nicolas; Chevreux, Pierrick

    2016-01-01

    The structure of triclinic disodium hafnium disilicate, Na2HfSi2O7, has been determined by laboratory powder X-ray diffraction and refined by the Rietveld refinement. The structure is a framework made of alternate layers of HfO6 octa­hedra and SiO4 tetra­hedra linked by common O atoms. Sodium atoms are located in the voids of the framework, aligned into tunnels along the [010] direction. Na2HfSi2O7 is isostructural with the parakeldyshite Na2ZrSi2O7 phase. PMID:27746936

  4. Electron escape depth variation in thin SiO2 films measured with variable photon energy

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.; Grunthaner, F. J.; Pianetta, P.; Johansson, L. I.; Lindau, I.

    1984-01-01

    A double crystal monochromator at the Stanford Synchrotron Radiation Laboratory is used to study the Si/SiO2 interface, using photon energies of hv = 1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 A thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). These differences are attributed to a strained oxide layer near the interface.

  5. Iron and Nickel Isotope Measurements on SiC X Grains with CHILI

    NASA Astrophysics Data System (ADS)

    Kodolányi, J.; Stephan, T.; Trappitsch, R.; Hoppe, P.; Pignatari, M.; Davis, A. M.; Pellin, M. J.

    2016-08-01

    New measurements with CHILI on SiC X grains provide more detailed Fe and Ni isotope data than previous NanoSIMS analyses. The new data suggest that Fe-Ni fractionation may occur in supernova ejecta before SiC condensation.

  6. Lattice modes in molecular crystals measured with nuclear inelastic scattering

    SciTech Connect

    Kohn, V. G.; Chumakov, A. I.; Rueffer, R.

    2006-03-01

    We reveal an important property of nuclear inelastic scattering in a molecular crystal with well-separated lattice and molecular modes: The presence of the molecular modes does not change the shape but merely rescales the lattice part of the energy dependence of nuclear inelastic scattering. Therefore, the density of states (DOS) of the lattice vibrations can be properly derived even from the lattice part of nuclear inelastic scattering alone. In this case, one has to substitute the mean recoil energy of a nucleus by the effective recoil energy of the molecule. In first approximation, the ratio of the recoil energies is close to the ratio of the nuclear and molecular masses. More precisely, it is given by the relative area of the lattice part in the entire DOS. The theoretical analysis is verified with numerical calculations for a model DOS and with the experimental data for the decamethyl ferrocene molecular crystal. More generally, the analysis is valid for any region of nuclear inelastic scattering around the central elastic peak with sufficiently narrow lines beyond it. Therefore, the demonstrated property of nuclear inelastic scattering allows for a much shorter measuring time in studies of lattice modes in molecular crystals, low-energy molecular modes in proteins, and in investigations of glass dynamics with molecular probes.

  7. X-Ray Line Measurements with High Efficiency Bragg Crystals

    SciTech Connect

    Pak, A; Gregori, G; Knight, J; Campbell, K; Landen, O; Glenzer, S

    2004-04-01

    We have studied the focusing properties of two highly oriented pyrolitic graphite (HOPG) spectrometers, which differ in the degree of the mosaic spread: ZYA with a low mosaic spread ({gamma}=0.4 degrees) and ZYH with a large mosaic spread ({gamma}=3.5 degrees). In order to assess the crystal performance for a variety of different experiments, various K{alpha} and K{beta} x-ray lines have been produced using a high-intensity ({approx}>10{sup 17} W/cm{sup 2}) short-pulse ({approx} 100 fs) laser beam focused onto Ti, V, Zn, and Cu foils. The measured spectral resolution of the HOPG crystals in both first and second order diffraction has been compared with theoretical predictions. Using known values for the peak reflectivity of HOPG crystals, we have also computed K{alpha} x-ray conversion efficiencies of Ti, V, Zn, and Cu. These results are important to estimate the optimal conditions under which different types of HOPG monochromators can be used for the detection of weak x-ray signals as the one encountered in x-ray Thomson/Compton scattering experiments.

  8. X-ray line measurements with high efficiency Bragg crystals

    SciTech Connect

    Pak, A.; Gregori, G.; Knight, J.; Campbell, K.; Price, D.; Hammel, B.; Landen, O.L.; Glenzer, S.H.

    2004-10-01

    We have studied the focusing properties of two highly oriented pyrolitic graphite (HOPG) spectrometers, which differ in the degree of the mosaic spread: ZYA with a low mosaic spread ({gamma}=0.4 deg.) and ZYH with a large mosaic spread ({gamma}=3.5 deg.). In order to asses the crystal performance for a variety of different experiments, various K{alpha} and K{beta} x-ray lines have been produced using a high-intensity (> or approx. 10{sup 17} W/cm{sup 2}) short-pulse ({approx}100 fs) laser beam focused onto Ti, V, Zn, and Cu foils. The measured spectral resolution of the HOPG crystals in both first and second order diffraction has been compared with theoretical predictions. Using known values for the peak reflectivity of HOPG crystals, we have also computed K{alpha} x-ray conversion efficiencies of Ti, V, Zn, and Cu. These results are important to estimate the optimal conditions under which different types of HOPG monochromators can be used for the detection of weak x-ray signals as the one encountered in x-ray Thomson/Compton scattering experiments.

  9. Active performance of tetrahedral groups to SHG response: theoretical interpretations of Ge/Si-containing borate crystals.

    PubMed

    Li, Linping; Yang, Zhihua; Lei, Bing-Hua; Kong, Qingrong; Lee, Ming-Hsein; Zhang, Bingbing; Pan, Shilie; Zhang, Jun

    2016-02-17

    As potential candidates for deep-UV nonlinear optical (NLO) crystals, borosilicates and borogermanates, which contain NLO-active groups such as B-O, Si-O and Ge-O, have fascinated many scientists. The crystal structures, electronic structures and optical properties of seven borates in different B/R (R = Si, Ge) ratios have been studied using DFT methods. Through the SHG-density, we find that besides the recognized contribution of the π-conjugation configuration of BO3 to second harmonic generation (SHG), the tetrahedra have a non-negligible influence. This is because the non-bonding p orbitals of the bridging oxygen in the tetrahedra are observably closer to the Fermi level than those in BO3, which is observed in the PDOS of Rb4Ge3B6O17 and RbGeB3O7. This conclusion would be very meaningful in the understanding of the relationship between the crystal structure and nonlinear optical properties. PMID:26844983

  10. Si K Edge Measurements of the ISM with Chandra

    NASA Astrophysics Data System (ADS)

    Schulz, Norbert S.; Corrales, Lia; Canizares, C. R.

    2016-01-01

    The Si K edge structure in X-ray spectra of the diffuse ISM is expected to exhibit substructure related to the fact that most absorption is due to silicates in dust. We surveyed high resolution X-ray spectra of a large number of bright low-mass X-ray binaries with column densities significantly larger than 10^22 cm^2. Using the to date unprecedented spectral resolution of the high energy transmission gratings onboard the Chandra X-ray observatory we find complex substructure in the Si K edge. The highest resolved spectra show two edges, one at the expected value for atomic, one at the value for most silicate compounds with the dominant contribution of the latter. There is specific subtructure from silicate optical depth caused by absorption and scattering. Some is also variable and can be attributed to ionized absorption in the vicinity of the X-ray sources.

  11. Photothermal method for absorption measurements in anisotropic crystals

    NASA Astrophysics Data System (ADS)

    Stubenvoll, M.; Schäfer, B.; Mann, K.; Novak, O.

    2016-02-01

    A measurement system for quantitative determination of both surface and bulk contributions to the photo-thermal absorption has been extended to anisotropic optical media. It bases upon a highly sensitive Hartmann-Shack wavefront sensor, accomplishing precise on-line monitoring of wavefront deformations of a collimated test beam transmitted perpendicularly through the laser-irradiated side of a cuboid sample. Caused by the temperature dependence of the refractive index as well as thermal expansion, the initially plane wavefront of the test beam is distorted. Sign and magnitude depend on index change and expansion. By comparison with thermal theory, a calibration of the measurement is possible, yielding a quantitative absolute measure of bulk and surface absorption losses from the transient wavefront distortion. Results for KTP and BBO single crystals are presented.

  12. Piconewton force measurement using a nanometric photonic crystal diaphragm.

    PubMed

    Jo, Wonuk; Digonnet, Michel J F

    2014-08-01

    A compact force fiber sensor capable of measuring forces at the piconewton level is reported. It consists of a miniature Fabry-Perot cavity fabricated at the tip a single-mode fiber, in which the external reflector is a compliant photonic-crystal diaphragm that deflects when subjected to a force. In the laboratory environment, this sensor was able to detect a force of only ∼4  pN generated by the radiation pressure of a laser beam. Its measured minimum detectable force (MDF) at 3 kHz was as weak as 1.3  pN/√Hz. In a quiet environment, the measured noise was ∼16 times lower, and the MDF predicted to be ∼76  fN/√Hz. PMID:25078221

  13. Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

    SciTech Connect

    Schmidt, E. W.; Bernhardt, D.; Mueller, A.; Schippers, S.; Fritzsche, S.; Hoffmann, J.; Jaroshevich, A. S.; Krantz, C.; Lestinsky, M.; Orlov, D. A.; Wolf, A.; Lukic, D.; Savin, D. W.

    2007-09-15

    The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p{sup 6}nln{sup '}l{sup '} dielectronic recombination (DR) resonances associated with 3s{yields}nl core excitations, 2s2p{sup 6}3snln{sup '}l{sup '} resonances associated with 2s{yields}nl (n=3,4) core excitations, and 2p{sup 5}3snln{sup '}l{sup '} resonances associated with 2p{yields}nl (n=3,...,{infinity}) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s{yields}3pn{sup '}l{sup '} and 3s{yields}3dn{sup '}l{sup '}(both n{sup '}=3,...,6) and 2p{sup 5}3s3ln{sup '}l{sup '} (n{sup '}=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.

  14. Si1-xGex crystal growth by the floating zone method starting from SPS sintered feed rods - A segregation study

    NASA Astrophysics Data System (ADS)

    Wagner, A. C.; Cröll, A.; Hillebrecht, H.

    2016-08-01

    The availability of suitable feed rods for Si-Ge bulk crystal growth is known to be a limiting factor in floating zone growth and other growth techniques. In this work, three Si-rich SiGe single crystals were crystallized by an optical floating zone technique in a double ellipsoid mirror furnace. The feed rods were prepared by pre-synthesis in the Spark Plasma Sintering (SPS) process starting with powders of different compositions. In a detailed section the preparation method of consolidation by mechanical alloyed powders to feed rods will be given. Results from two growth experiments starting with uniform compositions with 11 at% and 20 at% germanium as well as a zone leveling experiment with a segmented feed rod consisting of a starting zone with 32 at% Ge will be discussed. The latter experiment resulted in a crystal with nearly no axial segregation.

  15. Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

    NASA Astrophysics Data System (ADS)

    Taniguchi, Chisato; Ichimura, Aiko; Ohtani, Noboru; Katsuno, Masakazu; Fujimoto, Tatsuo; Sato, Shinya; Tsuge, Hiroshi; Yano, Takayuki

    2016-04-01

    The formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed model, and provides a detailed explanation of the annealing-induced formation of double layer Shockley-type stacking faults in heavily nitrogen-doped 4H-SiC crystals. We further revised the model to consider the carrier distribution in the depletion regions adjacent to the stacking fault and successfully explained the shrinkage of stacking faults during annealing at even higher temperatures. The model also succeeded in accounting for the aluminum co-doping effect in heavily nitrogen-doped 4H-SiC crystals, in that the stacking fault formation is suppressed when aluminum acceptors are co-doped in the crystals.

  16. Influence of thickness of Fe-3% Si single crystals on ratio of magnetic losses in rotating and linearly polarized magnetic fields

    NASA Astrophysics Data System (ADS)

    Tiunov, V. F.

    2013-06-01

    The influence of the thickness of Fe-3% Si single crystals on the ratio of magnetic losses in rotating magnetic fields to losses measured in linearly polarized magnetic fields is investigated. A nonmonotonic character of the behavior of this ratio depending on the thickness of the samples in the range of its variation of 0.09-040 mm is revealed. It is established that the thickness of samples, which corresponds to minimal losses upon rotating remagnetization, exceeds their thickness measured for the samples in linearly polarized fields by a factor of almost two. The revealed features in the behavior of magnetic losses of the samples studied are discussed based on the dynamics of their domain structure.

  17. Kondo Lattice and Antiferromagnetic Behavior in Quaternary CeTAl4Si2 (T = Rh, Ir) Single Crystals

    NASA Astrophysics Data System (ADS)

    Maurya, Arvind; Kulkarni, Ruta; Thamizhavel, Arumugam; Paudyal, Durga; Dhar, Sudesh Kumar

    2016-03-01

    We have explored in detail the anisotropic magnetic properties of CeRhAl4Si2 and CeIrAl4Si2, which undergo two antiferromagnetic transitions, at TN1 = 12.6 and 15.5 K, followed by a second transition at TN2 = 9.4 and 13.8 K, respectively, with the [001]-axis as the relatively easy axis of magnetization. The electrical resistivity at ambient and applied pressure provides evidence of Kondo interaction in both compounds, further supported by a reduced value of the entropy associated with the magnetic ordering. The Sommerfeld coefficient γ is inferred to be 195.6 and 49.4 mJ/(mol K2) for CeRhAl4Si2 and CeIrAl4Si2, respectively, classifying these materials as moderate heavy-fermion compounds. The crystal electric field energy levels are derived from the peak seen in the Schottky heat capacity. Furthermore, we have also performed electronic structure calculations by using the local spin density approximation + U [LSDA+U] approach, which provide physical insights on the observed magnetic behavior of these two compounds.

  18. Electrochemical Characteristics of Cell Cultured Ti-Nb-Zr Alloys After Nano-Crystallized Si-HA Coating.

    PubMed

    Jeong, Yong-Hoon; Choe, Han-Cheol

    2015-01-01

    The aim of this study was to investigate the electrochemical characteristics of nano crystallized Si-HA coating on Ti-Nb-Zr alloy after human osteoblast like (HOB) cell attachment. The Ti-Nb-Zr alloy was manufactured with 35 wt.% of Nb and 10 wt.% of Zr by arc melting furnace to appropriate physical properties as biomaterials. The HA and Si-substituted coatings were prepared by electron-beam physical vapor deposition method with 0.5, 0.8 and 1.2 wt.% of Si contents, and nano aging treatment was performed 500 degrees C for 1 h. The characteristics of coating surface were analyzed by field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction, respectively. To evaluate of cell attachment on cell cultured surface, the potentiodynamic test was performed on the surface using HOB cells. The results showed that the Si-HA coating surface showed higher tendency of cell attachment than that of single HA coating, corrosion resistance value was increased by dense of cell attachment.

  19. Kondo lattice and antiferromagnetic behavior in quaternary CeTAl4Si2 (T = Rh, Ir) single crystals

    DOE PAGES

    Maurya, Arvind; Kulkarni, Ruta; Thamizhavel, Arumugam; Paudyal, Durga; Dhar, Sudesh Kumar

    2016-02-26

    Here, we have explored in detail the anisotropic magnetic properties of CeRhAl4Si2 and CeIrAl4Si2, which undergo two antiferromagnetic transitions, at TN1 = 12.6 and 15.5 K, followed by a second transition at TN2 = 9.4 and 13.8 K, respectively, with the [001]-axis as the relatively easy axis of magnetization. The electrical resistivity at ambient and applied pressure provides evidence of Kondo interaction in both compounds, further supported by a reduced value of the entropy associated with the magnetic ordering. The Sommerfeld coefficient γ is inferred to be 195.6 and 49.4 mJ/(mol K2) for CeRhAl4Si2 and CeIrAl4Si2, respectively, classifying these materialsmore » as moderate heavy-fermion compounds. The crystal electric field energy levels are derived from the peak seen in the Schottky heat capacity. Furthermore, we have also performed electronic structure calculations by using the local spin density approximation + U [LSDA+U] approach, which provide physical insights on the observed magnetic behavior of these two compounds.« less

  20. Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures.

    PubMed

    Yang, Peng; Yang, Yingshu; Wang, Yinghui; Gao, Jiechao; Sui, Ning; Chi, Xiaochun; Zou, Lu; Zhang, Han-Zhuang

    2016-02-01

    The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. PMID:26781789

  1. Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures.

    PubMed

    Yang, Peng; Yang, Yingshu; Wang, Yinghui; Gao, Jiechao; Sui, Ning; Chi, Xiaochun; Zou, Lu; Zhang, Han-Zhuang

    2016-02-01

    The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs.

  2. BaAl4 derivative phases in the sections {La,Ce}Ni2Si2-{La,Ce}Zn2Si2: phase relations, crystal structures and physical properties.

    PubMed

    Failamani, Fainan; Malik, Zahida; Salamakha, Leonid; Kneidinger, Friedrich; Grytsiv, Andriy; Michor, Herwig; Bauer, Ernst; Giester, Gerald; Rogl, Peter

    2016-03-28

    Phase relations and crystal structures have been evaluated within the sections LaNi2Si2-LaZn2Si2 and CeNi2Si2-CeZn2Si2 at 800 °C using electron microprobe analysis and X-ray powder and single crystal structure analyses. Although the systems La-Zn-Si and Ce-Zn-Si at 800 °C do not reveal compounds such as "LaZn2Si2" or "CeZn2Si2", solid solutions {La,Ce}(Ni1-xZnx)2Si2 exist with the Ni/Zn substitution starting from {La,Ce}Ni2Si2 (ThCr2Si2-type; I4/mmm) up to x = 0.18 for Ce(Ni1-xZnx)2Si2 and x = 0.125 for La(Ni1-xZnx)2Si2. For higher Zn-contents 0.25 ≤ x ≤ 0.55 the solutions adopt the CaBe2Ge2-type (P4/nmm). The investigations are backed by single crystal X-ray diffraction data for Ce(Ni0.61Zn0.39)2Si2 (P4/nmm; a = 0.41022(1) nm, c = 0.98146(4) nm; RF = 0.012) and by Rietveld refinement for La(Ni0.56Zn0.44)2Si2 (P4/nmm; a = 0.41680(6) nm, c = 0.99364(4) nm; RF = 0.043). Interestingly, the Ce-Zn-Si system contains a ternary phase CeZn2(Si1-xZnx)2 of the ThCr2Si2 structure type (0.25 ≤ x ≤ 0.30 at 600 °C), which forms peritectically at T = 695 °C but does not include the composition "CeZn2Si2". The primitive high temperature tetragonal phase with the CaBe2Ge2-type has also been observed for the first time in the Ce-Ni-Si system at CeNi2+xSi2-x, x = 0.33 (single crystal data, P4/nmm; a = 0.40150(2) nm, c = 0.95210(2) nm; RF = 0.0163). Physical properties (from 400 mK to 300 K) including specific heat, electrical resistivity and magnetic susceptibility have been elucidated for Ce(Ni0.61Zn0.39)2Si2 and La(Ni0.56Zn0.44)2Si2. Ce(Ni0.61Zn0.39)2Si2 exhibits a Kondo-type ground state. Low temperature specific heat data of La(Ni0.56Zn0.44)2Si2 suggest a spin fluctuation scenario with an enhanced value of the Sommerfeld constant. PMID:26895373

  3. BaAl4 derivative phases in the sections {La,Ce}Ni2Si2-{La,Ce}Zn2Si2: phase relations, crystal structures and physical properties.

    PubMed

    Failamani, Fainan; Malik, Zahida; Salamakha, Leonid; Kneidinger, Friedrich; Grytsiv, Andriy; Michor, Herwig; Bauer, Ernst; Giester, Gerald; Rogl, Peter

    2016-03-28

    Phase relations and crystal structures have been evaluated within the sections LaNi2Si2-LaZn2Si2 and CeNi2Si2-CeZn2Si2 at 800 °C using electron microprobe analysis and X-ray powder and single crystal structure analyses. Although the systems La-Zn-Si and Ce-Zn-Si at 800 °C do not reveal compounds such as "LaZn2Si2" or "CeZn2Si2", solid solutions {La,Ce}(Ni1-xZnx)2Si2 exist with the Ni/Zn substitution starting from {La,Ce}Ni2Si2 (ThCr2Si2-type; I4/mmm) up to x = 0.18 for Ce(Ni1-xZnx)2Si2 and x = 0.125 for La(Ni1-xZnx)2Si2. For higher Zn-contents 0.25 ≤ x ≤ 0.55 the solutions adopt the CaBe2Ge2-type (P4/nmm). The investigations are backed by single crystal X-ray diffraction data for Ce(Ni0.61Zn0.39)2Si2 (P4/nmm; a = 0.41022(1) nm, c = 0.98146(4) nm; RF = 0.012) and by Rietveld refinement for La(Ni0.56Zn0.44)2Si2 (P4/nmm; a = 0.41680(6) nm, c = 0.99364(4) nm; RF = 0.043). Interestingly, the Ce-Zn-Si system contains a ternary phase CeZn2(Si1-xZnx)2 of the ThCr2Si2 structure type (0.25 ≤ x ≤ 0.30 at 600 °C), which forms peritectically at T = 695 °C but does not include the composition "CeZn2Si2". The primitive high temperature tetragonal phase with the CaBe2Ge2-type has also been observed for the first time in the Ce-Ni-Si system at CeNi2+xSi2-x, x = 0.33 (single crystal data, P4/nmm; a = 0.40150(2) nm, c = 0.95210(2) nm; RF = 0.0163). Physical properties (from 400 mK to 300 K) including specific heat, electrical resistivity and magnetic susceptibility have been elucidated for Ce(Ni0.61Zn0.39)2Si2 and La(Ni0.56Zn0.44)2Si2. Ce(Ni0.61Zn0.39)2Si2 exhibits a Kondo-type ground state. Low temperature specific heat data of La(Ni0.56Zn0.44)2Si2 suggest a spin fluctuation scenario with an enhanced value of the Sommerfeld constant.

  4. Time-Domain Thermoreflectance Measurements of Thermal Transport in Amorphous SiC Thin Films

    NASA Astrophysics Data System (ADS)

    Daly, Brian; Hondongwa, Donald; King, Sean

    2010-03-01

    We present ultrafast optical pump-probe measurements of thermal transport in a series of amorphous SiC samples. The samples were grown on Si wafers by plasma enhanced chemical vapor deposition utilizing various combinations of methylsilanes and H2 and He diluent gases. The sample films were well characterized and found to have densities (1.3 -- 2.3 g cm-3) and dielectric constants (4.0 -- 7.2) that spanned a wide range of values. Prior to their measurement, the samples were coated with 40-70 nm of polycrystalline Al. The pump-probe measurements were performed at room temperature using a modelocked Ti:sapphire laser that produced sub-picosecond pulses of a few nJ. The pulses heat the Al coating, causing a transient reflectivity change. As the Al film cools into the SiC film, the reflectivity change can be measured, giving a measure of the thermal effusivity of the SiC film. We then extract values for the thermal conductivity of the SiC films and find that it varies from less than half of the thermal conductivity of amorphous SiO2 for the lower density materials to somewhat larger than amorphous SiO2 for the highest density films.

  5. Crystal structure and electronic properties of the new compounds, U{sub 6}Fe{sub 16}Si{sub 7} and its interstitial carbide U{sub 6}Fe{sub 16}Si{sub 7}C

    SciTech Connect

    Berthebaud, D.; Tougait, O. Potel, M.; Lopes, E.B.; Goncalves, A.P.

    2007-10-15

    The new compounds U6Fe16Si7 and U6Fe16Si7C were prepared by arc-melting and subsequent annealing at 1500 deg. C. Single-crystal X-ray diffraction showed that they crystallize in the cubic space group Fm3-barm (No. 225), with unit-cell parameters at room temperature a=11.7206(5) A for U6Fe16Si7 and a=11.7814(2) A for U6Fe16Si7C. Their crystal structures correspond to ordered variants of the Th6Mn23 type. U6Fe16Si7 adopts the Mg6Cu16Si7 structure type, whereas U6Fe16Si7C crystallizes with a novel 'filled' quaternary variant. The inserted carbon is located in octahedral cages formed by six U atoms, with U-U interatomic distances of 3.509(1) A. Insertion of carbon in the structure of U6Fe16Si7 has a direct influence on the U-Fe and Fe-Fe interatomic distances. The electronic properties of both compounds were investigated by means of DC susceptibility, electrical resistivity and thermopower. U6Fe16Si7 is a Pauli paramagnet. Its electrical resistivity and thermopower point out that it cannot be classified as a simple metal. The magnetic susceptibility of U{sub 6}Fe{sub 16}Si{sub 7}C is best described over the temperature range 100-300 K by using a modified Curie-Weiss law with an effective magnetic moment of 2.3(2) {mu}{sub B}/U, a paramagnetic Weiss temperature, {theta}{sub p}=57(2) K and a temperature-independent term {chi}{sub 0}=0.057(1) emu/mol. Both the electrical resistivity and thermopower reveal metallic behavior. - Graphical abstract: The new compounds U{sub 6}Fe{sub 16}Si{sub 7} and U{sub 6}Fe{sub 16}Si{sub 7}C crystallize with the ternary ordered variant of the Th{sub 6}Mn{sub 23} type, commonly referred as Mg{sub 6}Cu{sub 16}Si7 and with a novel 'filled' variant of this type of structure, respectively.

  6. In-plane switching mode-based liquid-crystal hybrid Si wired Mach–Zehnder optical switch

    NASA Astrophysics Data System (ADS)

    Atsumi, Yuki; Miyazaki, Tetsuo; Takei, Ryohei; Okano, Makoto; Miura, Noboru; Mori, Masahiko; Sakakibara, Youichi

    2016-11-01

    A Mach–Zehnder optical switch based on a Si wire waveguide embedded in a liquid crystal overcladding is developed. Switching operation at a wavelength of 1550 nm with a voltage-length product of 1.86 V·mm is obtained for a device with a 300-µm-long loop-back phase shifter. The switching speed is qualitatively evaluated under various alignment film conditions, and switch-off and switch-on times of 7.9 and 8.4 ms, respectively, are achieved when the alignment layer is appropriately positioned relative to the waveguides.

  7. High quality Si-InP bulk crystal growth by horizontal gradient freeze method under controlled phosphorus vapor pressure

    NASA Astrophysics Data System (ADS)

    Yoshida, S.; Suzuki, J.; Nakayama, M.; Kikuta, T.

    1990-06-01

    High purity InP was grown by horizontal gradient freeze (HGF) method under controlled phosphorus vapor pressure. The ingot was free from residual In and In inclusion. The carrier concentration of undoped InP ingot was almost in the range of (1.1-4.0)×10 15 cm -3 at 77 K even though a quartz boat was used. Using this technique, Si-InP wafers with a high resistivity over 1.0×10 7 Ω cm were obtained by lower Fe doping (4.0×10 15 cm -3). The growth of single crystals using the seeding technique was also tried by direct synthesis. The strict control of the temperature gradient with the CPU system enabled the seeding to be performed reproducibly. A single crystal, 6 cm long, was obtained from the seed end of the ingot, but twin boundaries were generated from the middle of the ingot.

  8. Exchange field effect in the crystal-field ground state of Ce M Al4Si2

    NASA Astrophysics Data System (ADS)

    Chen, K.; Strigari, F.; Sundermann, M.; Agrestini, S.; Ghimire, N. J.; Lin, S.-Z.; Batista, C. D.; Bauer, E. D.; Thompson, J. D.; Otero, E.; Tanaka, A.; Severing, A.

    2016-09-01

    The crystal-field ground-state wave functions of the tetragonal, magnetically ordering Kondo lattice materials Ce M Al4Si2 (M =Rh , Ir, and Pt) are determined with low-temperature linearly polarized soft-x-ray absorption spectroscopy, and estimates for the crystal-field splittings are given from the temperature evolution of the linear dichroism. Values for the dominant exchange field in the magnetically ordered phases can be obtained from fitting the influence of magnetic order on the linear dichroism. The direction of the required exchange field is ∥c for the antiferromagnetic Rh and Ir compounds, with the corresponding strength of the order of λex≈6 meV (65 K). Furthermore, the presence of Kondo screening in the Rh and Ir compound is demonstrated on the basis of the absorption due to f0 in the initial state.

  9. Crystal structure of (tert-butyl­dimethyl­sil­yl)tri­phenyl­germane, Ph3Ge-SiMe2(t-Bu)

    PubMed Central

    Zaitsev, Kirill V.; Zaitseva, Galina S.; Karlov, Sergey S.; Korlyukov, Alexander A.

    2015-01-01

    In the title compound, Ph3Ge-SiMe2(t-Bu) or C24H30GeSi, the Si and Ge atoms both possess a tetra­hedral coordination environment with C—E—C (E = Si, Ge) angles in the range 104.47 (5)–114.67 (5)°. The mol­ecule adopts an eclipsed conformation, with three torsion angles less than 29.5°. In the crystal, neighbouring mol­ecules are combined to dimers by six T-shaped C—H⋯π inter­actions, forming sixfold phenyl embraces (6PE). PMID:26870472

  10. High-resolution transmission electron microscopy study of solid phase crystallized silicon thin films on SiO2: Crystal growth and defects formation

    NASA Astrophysics Data System (ADS)

    Kim, J. H.; Lee, J. Y.; Nam, K. S.

    1995-01-01

    A high-resolution transmission electron microscopy study of the solid phase crystallization of amorphous silicon thin films deposited on SiO2 at 520 C by low pressure chemical vapor deposition and annealed at 550 C in a dry N2 ambient was carried out so that the grain growth mechanism, various types of defects, and the origins of defect formation could be understood on an atomic level. Silicon crystallites formed at the initial stage of the crystallization had a circular shape and grains had a branched elliptical or a dendritic shape. Many twins, of which (111) coherent boundaries were parallel to the long axis of a grain, were observed in the interior of all the elongated grains. In addition to twins, the following defects are observed in the grain: intrinsic stacking faults, extrinsic stacking faults, perfect dislocations, extended screw dislocations, and Shockley partial dislocations. These defects were formed by the following reasons: errors in the stacking sequence at the amorphous/crystalline interface; jumps of a twin plane; the intersecting of two crystal growth fronts slightly misoriented; and the intersecting of two twin planes at the amorphous/crystalline interface. Among those defects, twins and stacking faults provided a preferable nucleation site for an atomic step of a (111) plane. As a result, it was concluded that grain growth in the (112) direction along the (111) plane parallel to the long axis of a grain was accelerated by twins and stacking faults.

  11. Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)

    SciTech Connect

    Nurdjaja, I.; Schiff, E.A.

    1997-07-01

    The authors present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

  12. Simultaneous NO and NO(2) DIAL measurement using BBO crystals.

    PubMed

    Kölsch, H J; Rairoux, P; Wolf, J P; Wöste, L

    1989-06-01

    We report a new differential absorption lidar technique for measuring simultaneously the concentrations of NO and NO(2) in the atmosphere. The technique is based on the correlation of the 450-nm absorption band of NO(2) and 227-nm absorption band of NO by frequency doubling. This performance has been allowed by the advent of a new and highly efficient frequency doubling crystal: the beta-BaB(2)O(4). A test experiment on a NO/NO(2) emitter has been performed, demonstrating the efficiency of the technique. The detection limit is estimated to be ~1 ppm .m for NO(2) and 100 ppb.m for NO. The range of measurement is limited to 1 km, due to the strong UV Rayleigh scattering and O(2) absorption.

  13. Quartz crystal microbalance and photoacoustic measurements in dental photocuring

    NASA Astrophysics Data System (ADS)

    Lima, Marcenilda A.; Bastos, Ivan N.; Cella, Norberto

    2016-09-01

    Photocured dental resins are used extensively in restorative procedures in dentistry. Inadequate curing reduces the lifetime of the dental restoration, and consequently it is essential to precisely measure the polymerisation kinetics. In this study, two techniques, Quartz Crystal Microbalance (QCM) and Photoacoustic Spectroscopy (PAS), were used to monitor the real-time cure and to obtain the optical absorption spectra of resins, respectively. From the PAS measurements, the precise peaks of absorption were identified, and were used as the appropriate wavelength of the photocuring light in the QCM monitoring. The combined use of these techniques allows reliable determination of the duration of the phases of physical and chemical changes that occur during photocuring. Two commercial dental resins were tested, and the results confirmed the advantages of using PAS and QCM to study polymerisation kinetics.

  14. Two isostructural layered oxohalide compounds containing Mn{sup 2+}, Te{sup 4+} and Si{sup 4+}; crystal structure and magnetic susceptibility

    SciTech Connect

    Zimmermann, Iwan; Kremer, Reinhard K.; Johnsson, Mats

    2014-10-15

    The new compounds Mn{sub 4}(TeO{sub 3})(SiO{sub 4})X{sub 2} (X=Br, Cl) were synthesized by solid state reactions in sealed evacuated silica tubes. The compounds crystallize in the monoclinic space group P2{sub 1}/m with the unit cell parameters a=5.5463(3) Å (5.49434(7) Å), b=6.4893(4) Å (6.44184(9) Å), c=12.8709(7) Å (12.60451(18) Å), β=93.559(5)° (94.1590(12)°) and Z=2 for the respective Br and Cl analogues. Manganese adopts various distorted coordination polyhedra; [MnO{sub 6}] octahedra, [MnO{sub 5}] tetragonal pyramids and [MnO{sub 2}X{sub 2}] tetrahedra. Other building blocks are [SiO{sub 4}] tetrahedra and [TeO{sub 3}] trigonal pyramids. The structure is made up from layers having no net charge that are connected via weak Van der Waal interactions. The layers that are parallel to (1 1 0) consist of two manganese oxide sheets which are separated by [SiO{sub 4}] tetrahedra. On the outer sides of the sheets are the [MnO{sub 2}X{sub 2}] tetrahedra and the [TeO{sub 3}] trigonal pyramids connected so that the halide ions and the stereochemically active lone pairs on the tellurium atoms protrude from the layers. Magnetic susceptibility measurements reveal a Curie law with a Weiss temperature of θ=−153(3) K for temperatures ≥100 K and indicate antiferromagnetic ordering at T{sub N} ∼4 K. Possible structural origins of the large frustration parameter of f=38 are discussed. - Graphical abstract: Table of contents caption. The new compounds Mn{sub 4}(TeO{sub 3})(SiO{sub 4})X{sub 2} (X=Br, Cl) are layered with weak Van der Waal interactions in between the layers. Manganese adopts various distorted coordination polyhedral, other building blocks are [SiO{sub 4}] tetrahedra and [TeO{sub 3}] trigonal pyramids. Magnetic susceptibility measurements indicate antiferromagnetic ordering at low temperatures and a large frustration parameter. - Highlights: • Two new isostructural oxohalide compounds are described. • The compounds are the first examples of

  15. The Influence of Na2O on the Solidification and Crystallization Behavior of CaO-SiO2-Al2O3-Based Mold Flux

    NASA Astrophysics Data System (ADS)

    Gao, Jinxing; Wen, Guanghua; Sun, Qihao; Tang, Ping; Liu, Qiang

    2015-08-01

    The reaction between [Al] and SiO2 sharply increased the Al2O3 and decreased SiO2 contents in mold flux during the continuous casting of high-Al steels. These changes converted original CaO-SiO2-based flux into CaO-SiO2-Al2O3-based flux, promoting the crystallization and deteriorating the mold lubrication. Therefore, study on the solidification and crystallization behavior of CaO-SiO2-Al2O3-based mold flux, with the applicable fluidizers, is of importance. The effect of Na2O, predominantly used as the fluidizer in mold flux, on the solidification and crystallization behavior of CaO-SiO2-Al2O3-based mold flux needs to be investigated. In this study, a CaO-SiO2-Al2O3-based mold flux containing 6.5 wt pct Li2O was designed; the effect of Na2O on the solidification and crystallization behavior of these mold fluxes was investigated using the single hot thermocouple technique (SHTT) and the double hot thermocouple technique (DHTT). Moreover, the slag film obtained by a heat flux simulator was analyzed using X-ray diffraction (XRD). The results indicate that the solid fraction of molten slag (Fs) and the crystalline fraction of solid slag (Fc) in the mold slag films decrease with increasing Na2O content from 0 to 2 wt pct. However, Fs and Fc increased when the Na2O content increased from 2 to 6 wt pct. The critical cooling rates initially decreases and then increases with increasing Na2O content. The XRD analysis results show that LiAlO2 and CaF2 were the basic crystals for all the mold fluxes. Increasing the Na2O content both inhibits the Ca2Al2SiO7 formation and promotes the production of Ca12Al14O33, indicating that the mold lubrication deteriorated because of the high melting-point phase formation of Ca2Al2SiO7 in the CaO-SiO2-Al2O3-based mold flux containing 6.5 wt pct Li2O, without Na2O. The strong crystallization tendency also deteriorated the mold lubrication for the mold flux with a higher Na2O content. Therefore, the addition of Na2O was less than 2 wt pct in

  16. Si1-x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing.

    PubMed

    Morris, R J H; Hase, T P A; Sanchez, A M; Rowlands, G

    2016-10-01

    The utility of energy sequencing for extracting an accurate matrix level interface profile using ultra-low energy SIMS (uleSIMS) is reported. Normally incident O2 (+) over an energy range of 0.25-2.5 keV were used to probe the interface between Si0.73Ge0.27/Si, which was also studied using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). All the SIMS profiles were linearized by taking the well understood matrix effects on ion yield and erosion rate into account. A method based on simultaneous fitting of the SIMS profiles measured at different energies is presented, which allows the intrinsic sample profile to be determined to sub-nanometer precision. Excellent agreement was found between the directly imaged HAADF-STEM interface and that derived from SIMS. Graphical Abstract ᅟ. PMID:27444703

  17. Si1- x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

    NASA Astrophysics Data System (ADS)

    Morris, R. J. H.; Hase, T. P. A.; Sanchez, A. M.; Rowlands, G.

    2016-10-01

    The utility of energy sequencing for extracting an accurate matrix level interface profile using ultra-low energy SIMS (uleSIMS) is reported. Normally incident O2 + over an energy range of 0.25-2.5 keV were used to probe the interface between Si0.73Ge0.27/Si, which was also studied using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). All the SIMS profiles were linearized by taking the well understood matrix effects on ion yield and erosion rate into account. A method based on simultaneous fitting of the SIMS profiles measured at different energies is presented, which allows the intrinsic sample profile to be determined to sub-nanometer precision. Excellent agreement was found between the directly imaged HAADF-STEM interface and that derived from SIMS.

  18. High-speed and high-efficiency Si optical modulator with MOS junction, using solid-phase crystallization of polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Fujikata, Junichi; Takahashi, Masashi; Takahashi, Shigeki; Horikawa, Tsuyoshi; Nakamura, Takahiro

    2016-04-01

    We developed a high-speed and high-efficiency MOS-capacitor-type Si optical modulator (Si-MOD) by applying a low optical loss and a low resistivity of a polycrystalline silicon (poly-Si) gate with large grains. To achieve a low resistivity of a poly-Si film, a P-doped poly-Si film based on Si2H6 solid-phase crystallization (SPC) was developed, which showed a comparable resistivity to that of P-doped single-crystal Si. In addition, high-temperature annealing (HTA) after SPC was effective for realizing low optical loss. We designed the optimum Si-MOD structure and demonstrated a very high modulation efficiency of 0.3 V cm, which is very efficient among the Si-MODs developed thus far. High-speed (15 Gbps) operation was achieved with a small footprint of the 200-µm-long phase shifter and a low drive voltage of 1.5 Vpp at a low optical insertion loss of -2.2 dB and 1.55 µm wavelength.

  19. Crystallization from high temperature solutions of Si in Cu/Al solvent

    DOEpatents

    Ciszek, Theodore F.; Wang, Tihu

    1996-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  20. Crystallization from high temperature solutions of Si in Cu/Al solvent

    DOEpatents

    Ciszek, T.F.; Wang, T.

    1996-08-13

    A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.

  1. Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

    NASA Astrophysics Data System (ADS)

    Guo, Lina; Liu, Shuang; Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

    2016-10-01

    CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

  2. Czochralski growth of Sr2Tb8(SiO4)6O2 crystals for visible-near IR magneto-optical applications

    NASA Astrophysics Data System (ADS)

    Chen, Xin; Zhang, Wenhui; Wan, Qiping; Guo, Feiyun; Zhuang, Naifeng; Fu, Hao; Xie, Xitong; Chen, Jianzhong

    2014-11-01

    Sr2Tb8(SiO4)6O2 crystals have been grown and investigated for the first time for magneto-optical applications. The X-ray powder diffraction confirms that the compound crystallizes in the hexagonal system, with a common oxyapatite structure. The as-grown crystal exhibits low thermal expansion anisotropy (αa/αc ≈ 1.1), and the hardness is about 5.0 Moh. The temperature dependence of the magnetic susceptibility indicated that the Sr2Tb8(SiO4)6O2 crystal exhibits paramagnetic behavior over the experimental temperature-range 2-300 K. The present investigations demonstrate that Sr2Tb8(SiO4)6O2 crystals show a higher visible transparency and a larger Faraday rotation than terbium gallium garnet (TGG) crystals. Sr2Tb8(SiO4)6O2 is therefore a very promising material in particular for new magneto-optical applications in the visible-near IR wavelength region.

  3. Rheo-NMR Measurements of Cocoa Butter Crystallized Under

    SciTech Connect

    Mudge, E.; Mazzanti, G

    2009-01-01

    Modifications of a benchtop NMR instrument were made to apply temperature control to a shearing NMR cell. This has enabled the determination in situ of the solid fat content (SFC) of cocoa butter under shearing conditions. The cocoa butter was cooled at 3 C/min to three final temperatures of 17.5, 20.0, and 22.5 C with applied shear rates between 45 and 720 s-1. Polymorphic transitions of the cocoa butter were determined using synchrotron X-ray diffraction with an identical shearing system constructed of Lexan. Sheared samples were shown to have accelerated phase transitions compared to static experiments. In experiments where form V was confirmed to be the dominant polymorph, the final SFC averaged around 50%. However, when other polymorphic forms were formed, a lower SFC was measured because the final temperature was within the melting range of that polymorph and only partial crystallization happened. A shear rate of 720 s-1 delayed phase transitions, likely due to viscous heating of the sample. Pulsed NMR is an invaluable tool for determining the crystalline fraction in hydrogen containing materials, yet its use for fundamental and industrial research on fat or alkanes crystallization under shear has only recently been developed.

  4. The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Ayers, J. E.

    1994-01-01

    The measurement of threading dislocation densities in heteroepitaxial semiconductor layers is important for the development of injection lasers, microwave transistors, and also the integration of devices in disimilar semiconductors. Dislocation density measurements have been made by destructive techniques such as etching and by transmission electron microscopy (TEM). However, X-ray rocking curves provide non-destructive measurements of dislocation densities with accuracy equal to crystallographic etches or TEM. The theory of this technique has been described by Gay, Hirsch, and Kelly [P. Gay, P.B. Hirsch, and A. Kelly, Acta Met. 1 (1953) 315] and Hordon and Averbach [M.J. Hordon and B.L. Averbach, Acta Met. 9 (1961) 237], for the case of highly dislocated metal crystals. In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors. It is shown that the measurement of several ( hkl) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocation density by two independent techniques, thus allowing for a check of self-consistency. It is shown that for the case of epitaxial GaAs on Si(001), dislocation densities determined by these two methods are in good agreement.

  5. On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects

    SciTech Connect

    Gaidar, G. P.

    2015-09-15

    A variation in the tensoresistance of n-Ge:Sb and n-Si:As crystals as a result of irradiation with γ-ray photons ({sup 60}Co source) at fixed temperatures under conditions of the application of uniaxial elastic stress (0 ≤ X ≤ 1.2 GPa) along the main crystallographic direction is studied. It is found that, in the case of the deformation axis being in an asymmetric position relative to the isoenergetic ellipsoids, there is a maximum for the dependences of the tensoresistance ρ{sub X}/ρ{sub 0} = f(X); an explanation as to the nature of the observed effect is suggested. Tensoresistance is revealed in unirradiated n-Si:As crystals in the case of the deformation axis being in a symmetric position relative to all isoenergetic ellipsoids; the value of the tensoresistance as a result of irradiation with γ-ray photons decreases. It is shown that this effect can be attributed to a variation in the mobility of electrons in the conduction band as a result of an increase in the transverse effective mass and the appearance of new deep-level centers under the effect of irradiation, respectively.

  6. Effects of ultrasonic agitation and surfactant additive on surface roughness of Si (111) crystal plane in alkaline KOH solution.

    PubMed

    Jiao, Qingbin; Tan, Xin; Zhu, Jiwei; Feng, Shulong; Gao, Jianxiang

    2016-07-01

    In the silicon wet etching process, the "pseudo-mask" formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (111) crystal plane during silicon wet etching process. The surface roughness Rq is smaller than 15 nm when using ultrasonic agitation and Rq is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5-20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30-50 W/L, the surface roughness Rq is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness Rq is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (111) crystal plane in silicon wet etching process.

  7. Vertical alignment of liquid crystal through ion beam exposure on oxygen-doped SiC films deposited at room temperature

    SciTech Connect

    Son, Phil Kook; Park, Jeung Hun; Kim, Jae Chang; Yoon, Tae-Hoon; Rho, Soon Joon; Jeon, Back Kyun; Shin, Sung Tae; Kim, Jang Sub; Lim, Soon Kwon

    2007-09-03

    The authors report the vertical alignment of liquid crystal (LC) through the ion beam exposure on amorphous oxygen-doped SiC (SiOC) film surfaces deposited at room temperature. The optical transmittance of these films was similar to that of polyimide layers, but much higher than that of SiO{sub x} films. The light leakage of a LC cell aligned vertically on SiOC films was much lower than those of a LC cell aligned on polyimide layers or other inorganic films. They found that LC molecules align vertically on ion beam treated SiOC film when the roughness of the electrostatic force microscopy (EFM) data is high on the SiOC film surface, while they align homogeneously when the roughness of the EFM data is low.

  8. Mesoporogen-Free Synthesis of Hierarchically Structured Zeolites with Variable Si/Al Ratios via a Steam-Assisted Crystallization Process.

    PubMed

    He, Xiaoyun; Ge, Tongguang; Hua, Zile; Zhou, Jian; Lv, Jian; Zhou, Jinling; Liu, Zhicheng; Shi, Jianlin

    2016-03-23

    In the absence of additional mesoporous template, hierarchically structured zeolites (HSZs) with variable Si/Al ratios (30-150) have been successfully synthesized via a newly developed steam-assisted crystallization process. The synthesized materials were characterized with powder X-ray diffraction, nitrogen sorption measurement, scanning electron microscopy, transmission electron microscopy, inductively coupled plasma optical emission spectrometry, solid-state nuclear magnetic resonance, and ammonia temperature-programmed desorption. All these results prove that the synthesized materials feature high crystallinity (microporous framework) and auxiliary mesoporous structure. In the model reactions of isopropylbenzene and 1,3,5-triisopropylbenzene cracking, compared to purely microporous ZSM-5 counterparts, here synthesized HSZs exhibited markedly enhanced catalytic performances resulting from their enlarged external surface area and shortened diffusion length in the microporous system. PMID:26928368

  9. Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method

    NASA Astrophysics Data System (ADS)

    Feng, He; Xu, Wusheng; Ren, Guohao; Yang, Qiuhong; Xie, Jianjun; Xu, Jun; Xu, Jiayue

    2013-02-01

    Single crystal of Gd2Si2O7:Ce (GPS) presenting attractive scintillation performance was grown by the floating zone method. The vacuum ultra-violet (VUV) excitation and emission, ultra-violet (UV) excitation and emission spectra and fluorescent decay time at 77 K and RT were measured and discussed. Relative energy levels of 5d sublevels of Ce3+ in GPS:Ce are detected by the VUV excitation spectrum. The UV emission curve of GPS:1%Ce peaks around 382 nm at 77 K and moves towards longer wavelength direction as temperature increases. Thermally stimulated luminescence (TSL) was employed to investigate the defects in GPS:1%Ce. Energy depths of two traps detected in GPS:1%Ce are 0.64 and 1.00 eV.

  10. Investigation of crystal surface finish and geometry on single LYSO scintillator detector performance for depth-of-interaction measurement with silicon photomultipliers

    NASA Astrophysics Data System (ADS)

    Bircher, Chad; Shao, Yiping

    2012-11-01

    Depth of Interaction (DOI) information can improve quality of reconstructed images acquired from Positron Emission Tomography (PET), especially in high resolution and compact scanners dedicated for breast, brain, or small animal imaging applications. Additionally, clinical scanners with time of flight capability can also benefit from DOI information. One of the most promising methods of determining DOI in a crystal involves reading the signal from two ends of a scintillation crystal, and calculating the signal ratio between the two detectors. This method is known to deliver a better DOI resolution with rough crystals compared to highly polished crystals. However, what is still not well studied is how much of a tradeoff is involved between spatial, energy, temporal, and DOI resolutions as a function of the crystal surface treatment and geometry with the use of Silicon Photomultipliers (SiPM) as the photo detectors. This study investigates the effects of different crystal surface finishes and geometries on energy, timing and DOI resolutions at different crystal depths. The results show that for LYSO scintillators of 1.5×1.5×20 mm3 and 2×2×20 mm3 with their surfaces finished from 0.5 to 30 μm roughness, almost the same energy and coincidence timing resolutions were maintained, around 15% and 2.4 ns, respectively across different crystal depths, while the DOI resolutions were steadily improved from worse than 5 mm to better than 2 mm. They demonstrate that crystal roughness, with proper surface preparing, does not have a significant effect on the energy and coincidence timing resolutions in the crystals examined, and there does not appear to be a tradeoff between improving DOI resolution and degrading other detector performances. These results will be valuable to guide the selection of crystal surface conditions for developing a DOI measurable PET detector with a full array of LYSO scintillators coupled to SiPM arrays.

  11. Interplay between crystal field splitting and Kondo effect in CeNi9Ge(4-x)Si(x).

    PubMed

    Gold, C; Gross, P; Peyker, L; Eickerling, G; Simeoni, G G; Stockert, O; Kampert, E; Wolff-Fabris, F; Michor, H; Scheidt, E-W

    2012-09-01

    The pseudo-ternary solid solution CeNi(9)Ge(4-x)Si(x) (0 ≤ x ≤ 4) has been investigated by means of x-ray diffraction, magnetic susceptibility, specific heat, electrical resistivity, thermopower and inelastic neutron scattering studies. The isoelectronic substitution of germanium by silicon atoms causes a dramatic change of the relative strength of competing Kondo, RKKY and crystal field (CF) energy scales. The strongest effect is the continuous elevation of the Kondo temperature T(K) from approximately 3.5 K for CeNi(9)Ge(4) to about 70 K for CeNi(9)Si(4). This increase of the Kondo temperature is attended by a change of the CF level scheme of the Ce ions. The interplay of the different energy scales results in an incipient reduction of the ground state degeneracy from an effectively fourfold degenerate non-magnetic Kondo ground state with unusual non-Fermi-liquid features of CeNi(9)Ge(4) to a lower one, followed by an increase towards a sixfold, fully degenerate ground state multiplet in CeNi(9)Si(4) (T(K) ∼ Δ(CF)).

  12. Crystal structure of yegorovite Na4[Si4O8(OH)4] · 7H2O

    NASA Astrophysics Data System (ADS)

    Zubkova, N. V.; Pekov, I. V.; Pushcharovskii, D. Yu.; Kazantsev, S. S.

    2009-07-01

    Using X-ray analysis, the crystal structure of yegorovite Na4[Si4O8(OH)4] · 7H2O, a newly-discovered mineral from the Lovozero alkaline complex (Kola Peninsula, Russia), was determined. The mineral is monoclinic, of P21/ c, a = 9.8744(4), b = 12.3981(5), c = 14.8973(7) Å, β = 104.675(5)°, V =1764.29(13)Å3, Z = 4. Yegorovite is a representative of a new structure type. Its structure is based upon the zigzag chains [Si4O8(OH)4]∞ extended along [100]. The Na atoms occupy four nonequivalent crystallographic positions and are located in six-fold polyhedra [NaO(OH)2(H2O)3] and [NaO(OH)(H2O)4]. The Na polyhedra are joined with each other by vertices and edges to form corrugated layers parallel to (001). To each of these layers, the silicon-oxygen chains adjoin from both sides, and the neighboring Na-Si layers are combined with one another by a system of H-bonds.

  13. Growth of single-crystal Al layers on GaAs and Si substrates for microwave superconducting resonators

    NASA Astrophysics Data System (ADS)

    Tournet, J.; Gosselink, D.; Jaikissoon, M.; Miao, G.-X.; Langenberg, D.; Mariantoni, M.; Wasilewski, Zr

    Thin Al layers on dielectrics are essential building blocks of circuits used in the quest for scalable quantum computing systems. While molecular beam epitaxy (MBE) has been shown to produce the highest quality Al layers, further reduction of losses in superconducting resonators fabricated from them is highly desirable. Defects at the Al-substrate interface are likely the key source of losses. Here we report on the optimization of MBE growth of Al layers on GaAs and Si substrates. Si surfaces were prepared by in-situ high temperature substrate annealing. For GaAs, defects typically remaining on the substrate surfaces after oxide desorption were overgrown with GaAs or GaAs/AlAs superlattice buffer layers. Such surface preparation steps were followed by cooling process to below 0°C, precisely controlled to obtain targeted surface reconstructions. Deposition of 110 nm Al layers was done at subzero temperatures and monitored with RHEED at several azimuths simultaneously. The resulting layers were characterized by HRXRD, AFM and Nomarski. Single crystal, near-atomically smooth layers of Al(110) were demonstrated on GaAs(001)-2x4 surface whereas Al(111) of comparable quality was formed on Si(111)-1x1 and 7x7 surfaces.

  14. Rotation method for the measurement of thickness of Z-cut uniaxial crystals

    NASA Astrophysics Data System (ADS)

    Paranin, V. D.

    2015-12-01

    An original polarization method for the measurement of thickness of Z-cut uniaxial crystals employs the transmittance measurement of the polarizer-crystal-analyzer system at different rotation angles of the crystal. The mathematical analysis of the method is based on the optics of uniaxial crystals and Jones matrices. A measurement error of no greater than ±0.6 μm is estimated using the formula of a vector sum. Z-cut crystals of congruent lithium niobate with rated thicknesses of 514 and 554 μm are used to experimentally test the method and propose practical recommendations for applications.

  15. A More Accurate Measurement of the {sup 28}Si Lattice Parameter

    SciTech Connect

    Massa, E. Sasso, C. P.; Mana, G.; Palmisano, C.

    2015-09-15

    In 2011, a discrepancy between the values of the Planck constant measured by counting Si atoms and by comparing mechanical and electrical powers prompted a review, among others, of the measurement of the spacing of {sup 28}Si (220) lattice planes, either to confirm the measured value and its uncertainty or to identify errors. This exercise confirmed the result of the previous measurement and yields the additional value d{sub 220} = 192 014 711.98(34) am having a reduced uncertainty.

  16. Measurements of striae in CR+ doped YAG laser crystals

    NASA Technical Reports Server (NTRS)

    Cady, Fredrick M.

    1994-01-01

    Striations in Czochralski (CZ) grown crystals have been observed in materials such as GaAs, silicon, photorefractive crystals used for data storage, potassium titanyl phosphate crystals and LiNbO3. Several techniques have been used for investigating these defects including electron microscopy, laser scanning tomography, selective photoetching, X-ray diffuse scattering, interference orthoscopy, laser interferometry and micro-Fourier transform infrared spectroscopy mapping. A 2mm thick sample of the material to be investigated is illuminated with light that is absorbed and non-absorbed by the ion concentration to be observed. The back surface of the sample is focused onto a solid-state image detector and images of the input beam and absorbed (and diffracted) beams are captured at two wavelengths. The variation of the coefficient of absorption asa function of distance on the sample can be derived from these measurements. A Big Sky Software Beamcode system is used to capture and display images. Software has been written to convert the Beamcode data files to a format that can be imported into a spreadsheet program such as Quatro Pro. The spreadsheet is then used to manipulate and display data. A model of the intensity map of the striae collected by the imaging system has been proposed and a data analysis procedure derived. From this, the variability of the attenuation coefficient alpha can be generated. Preliminary results show that alpha may vary by a factor of four or five over distances of 100 mu m. Potential errors and problems have been discovered and additional experiments and improvements to the experimental setup are in progress and we must now show that the measurement techniques and data analysis procedures provide 'real' information. Striae are clearly visible at all wavelengths including white light. Their basic spatial frequency does not change radically, at least when changing from blue to green to white light. Further experimental and theoretical work can

  17. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si.

    PubMed

    Pantzas, K; Le Bourhis, E; Patriarche, G; Troadec, D; Beaudoin, G; Itawi, A; Sagnes, I; Talneau, A

    2016-03-18

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m(-2), respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits. PMID:26878333

  18. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    NASA Astrophysics Data System (ADS)

    Pantzas, K.; Le Bourhis, E.; Patriarche, G.; Troadec, D.; Beaudoin, G.; Itawi, A.; Sagnes, I.; Talneau, A.

    2016-03-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m-2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  19. Dependence of acoustic property on Al substitution for Ca3Ta(Ga1‑ x Al x )3Si2O14 single crystals

    NASA Astrophysics Data System (ADS)

    Ohashi, Yuji; Arakawa, Mototaka; Kudo, Tetsuo; Yokota, Yuui; Shoji, Yasuhiro; Kurosawa, Shunsuke; Kamada, Kei; Kushibiki, Jun-ichi; Yoshikawa, Akira

    2016-07-01

    The acoustic properties of Ca3Ta(Ga1‑ x Al x )3Si2O14 (CTGASx) were experimentally studied as a function of the Al substitution content x in the ranges from x = 0 to 0.50. Five specimens, X-, Y-, Z-, 35°Y-, and 140°Y-cut, were prepared from each crystal of CTGASx (x = 0, 0.25, and 0.50) grown by the Czochralski technique. Longitudinal wave and shear wave velocities for CTGASx linearly increase with Al content for all propagation directions. Dielectric constants and density were measured and then elastic and piezoelectric constants were determined from the measured velocities for each crystal. The results revealed that all of the constants change linearly with Al content. From the relationship, the constants for CTAS (x = 1) were estimated. Calculations of the velocities using the determined constants also suggested that the maximum electromechanical coupling factor k 2 for the slow shear wave mode propagating along the rotated Y-axis direction of CTAS was improved to 4.42% compared with 3.83% for CTGS, owing to the Al substitution effect.

  20. System for the growth of bulk SiC crystals by modified CVD techniques

    NASA Technical Reports Server (NTRS)

    Steckl, Andrew J.

    1994-01-01

    The goal of this program was the development of a SiC CVD growth of films thick enough to be useful as pseudo-substrates. The cold-walled CVD system was designed, assembled, and tested. Extrapolating from preliminary evaluation of SiC films grown in the system at relatively low temperatures indicates that the growth rate at the final temperatures will be high enough to make our approach practical. Modifications of the system to allow high temperature growth and cleaner growth conditions are in progress. This program was jointly funded by Wright Laboratory, Materials Directorate and NASA LeRC and monitored by NASA.

  1. Crystalline and spin chiralities in multiferroics with langasite-type structure and Fe1- x Co x Si crystals

    NASA Astrophysics Data System (ADS)

    Pikin, S. A.; Lyubutin, I. S.; Dudka, A. P.

    2015-09-01

    It is shown that, when magnetic ordering occurs in layered iron-containing langasites (sp. gr. P321), one of the reasons for spin chiralities of different signs is the presence of structural chirality (the existence of inversion twins), which, in turn, is due to the nonsymmetricity of these crystals. Spin helicoids arise in these multiferroics at split sites of Fe3+ ions below the Néel point. The direction of electric polarization vectors coincides with the direction of the magnetic helicoid axes because of the piezoelectric properties of these materials. Due to the magnetostriction effects, structural chirality wave vector k z exceeds the magnetic helicoid wave vector by a factor of 2: k z = 2 q z. The temperatures of transitions to the chiral structural and chiral magnetic states may differ. In particular, if the structural transition initial temperature exceeds the magnetic transition temperature ( Т U > Т М ), structural displacements may arise in the absence of magnetism at Т М < Т < Т U . In noncentrosymmetric Fe1- x Co x Si crystals (sp. gr. P213), which are not multiferroics, magnetic chirality is due to the Dzyaloshinski-Moriya interaction. The dependence of the moduli of incommensurate wave number of the corresponding helicoid on the atomic composition of the crystals under consideration is nonmonotonic.

  2. Set-up and methods for SiPM Photo-Detection Efficiency measurements

    NASA Astrophysics Data System (ADS)

    Zappalà, G.; Acerbi, F.; Ferri, A.; Gola, A.; Paternoster, G.; Zorzi, N.; Piemonte, C.

    2016-08-01

    In this work, a compact set-up and three different methods to measure the Photo-Detection Efficiency (PDE) of Silicon Photomultipliers (SiPMs) and Single-Photon Avalanche Diodes (SPADs) are presented. The methods, based on either continuous or pulsed light illumination, are discussed in detail and compared in terms of measurement precision and time. For the SiPM, these methods have the feature of minimizing the effect of both the primary and correlated noise on the PDE estimation. The PDE of SiPMs (produced at FBK, Trento, Italy) was measured in a range from UV to NIR, obtaining similar results with all the methods. Furthermore, the advantages of measuring, when possible, the PDE of SPADs (of the same technology and with the same layout of a single SiPM cell) instead of larger devices are also discussed and a direct comparison between measurement results is shown. Using a SPAD, it is possible to reduce the measurement complexity and uncertainty since the correlated noise sources are reduced with respect to the SiPM case.

  3. Crystallography of the NiHfSi Phase in a NiAl (0.5 Hf) Single-Crystal Alloy

    NASA Technical Reports Server (NTRS)

    Garg, A.; Noebe, R. D.; Darolia, R.

    1996-01-01

    Small additions of Hf to conventionally processed NiAl single crystals result in the precipitation of a high density of cuboidal G-phase along with a newly identified silicide phase. Both of these phases form in the presence of Si which is not an intentional alloying addition but is a contaminant resulting from contact with the ceramic shell molds during directional solidification of the single-crystal ingots. The morphology, crystal structure and Orientation Relationship (OR) of the silicide phase in a NiAl (0.5 at.%Hf) single-crystal alloy have been determined using transmission electron microscopy, electron microdiffraction and energy dispersive X-ray spectroscopy. Qualitative elemental analysis and indexing of the electron microdiffraction patterns from the new phase indicate that it is an orthorhombic NiHfSi phase with unit cell parameters, a = 0.639 nm, b = 0.389 nm and c = 0.72 nm, and space group Pnma. The NiHfSi phase forms as thin rectangular plates on NiAl/111/ planes with an OR that is given by NiHfSi(100))(parallel) NiAl(111) and NiHfSi zone axes(010) (parallel) NiAl zone axes (101). Twelve variants of the NiHfSi phase were observed in the alloy and the number of variants and rectangular morphology of NiHfSi plates are consistent with symmetry requirements. Quenching experiments indicate that nucleation of the NiHfSi phase in NiAI(Hf) alloys is aided by the formation of NiAl group of zone axes (111) vacancy loops that form on the NiAl /111/ planes.

  4. Preparation and upconversion emission modification of Yb, Er co-doped Y2SiO5 inverse opal photonic crystals.

    PubMed

    Yan, Dong; Zhu, Jialun; Yang, Zhengwen; Wu, Hangjun; Wang, Rongfei; Qiu, Jianbei; Song, Zhiguo; Zhou, Dacheng; Yang, Yong; Yin, Zhaoyi

    2014-05-01

    Yb, Er co-doped Y2SiO5 inverse opal photonic crystals with three-dimensionally ordered macroporous were fabricated using polystyrene colloidal crystals as the template. Under 980 nm excitation, the effect of the photonic stopband on the upconversion luminescence of Er3+ ions has been investigated in the Y2SiO5:Yb, Er inverse opals. Significant suppression of the green or red UC emissions was detected if the photonic band-gap overlaps with the Er3+ ions emission band. PMID:24734639

  5. Coherent bremsstrahlung and channeling radiation from 40 and 150 GeV electrons and positrons traversing Si and diamond single crystals near planar directions

    NASA Astrophysics Data System (ADS)

    Medenwaldt, R.; Møller, S. P.; Sørensen, A. H.; Uggerhøj, E.; Elsener, K.; Hage-Ali, M.; Siffert, P.; Stoquert, J.; Sona, P.

    1991-05-01

    Along planar directions in both Si and C single crystals the radiation yields from 150 GeV electrons are enhanced 40 times or more and the data present the first use of C crystals in the multi-hundred GeV region. For channeled electrons in Si the experimental results agree with calculations using the constant field approximation (CFA). Increasing incident angles reduce rapidly soft photon yields as expected from first order corrections to CFA. The first born approximation only describes experimental results for large incident angles to planes.

  6. Effective refractive index of face-centered-cubic and hexagonal close-packed 250 nm-SiO2 based colloidal crystals

    NASA Astrophysics Data System (ADS)

    Salcedo-Reyes, Juan Carlos

    2012-01-01

    A quantitative kinematic analysis, of the refraction properties of face-centered-cubic and hexagonal close-packed 250 nm-SiO2-based colloidal crystals, was performed using the plane wave expansion method. The angle-dependent effective refractive index, for different frequencies, was calculated taking into account the continuity of the tangential component of the wave vector across the interface and the energy conservation principle as well. The results demonstrate that the unusual optical properties, of the close packed SiO2-based colloidal crystals, depend strongly on the sphere-packing symmetry rather than from the material itself.

  7. Crystal Growth, Structure, and Physical Properties of LnCu[subscript 2](Al,Si)[subscript 5] (Ln = La and Ce)

    SciTech Connect

    Phelan, W. Adam; Kangas, Michael J.; Drake, Brenton L.; Zhao, Liang L.; Wang, Jiakui K.; DiTusa, J.F.; Morosan, Emilia; Chan, Julia Y.

    2012-03-15

    LnCu{sub 2}(Al,Si){sub 5} (Ln = La and Ce) were synthesized and characterized. These compounds adopt the SrAu{sub 2}Ga{sub 5} structure type and crystallize in the tetragonal space group P4/mmm with unit cell dimensions of a {approx} 4.2 {angstrom} and c {approx} 7.9 {angstrom}. Herein, we report the structure as obtained from single crystal X-ray diffraction. Additionally, we report the magnetic susceptibility, magnetization, resistivity, and specific heat capacity data obtained for polycrystalline samples of LnCu{sub 2}(Al,Si){sub 5} (Ln = La and Ce).

  8. High Energy IED measurements with MEMs based Si grid technology inside a 300mm Si wafer

    NASA Astrophysics Data System (ADS)

    Funk, Merritt

    2012-10-01

    The measurement of ion energy at the wafer surface for commercial equipment and process development without extensive modification of the reactor geometry has been an industry challenge. High energy, wide frequency range, process gases tolerant, contamination free and accurate ion energy measurements are the base requirements. In this work we will report on the complete system developed to achieve the base requirements. The system includes: a reusable silicon ion energy analyzer (IEA) wafer, signal feed through, RF confinement, and high voltage measurement and control. The IEA wafer design required carful understanding of the relationships between the plasma Debye length, the number of grids, intergrid charge exchange (spacing), capacitive coupling, materials, and dielectric flash over constraints. RF confinement with measurement transparency was addressed so as not to disturb the chamber plasma, wafer sheath and DC self-bias as well as to achieve spectral accuracy The experimental results were collected using a commercial parallel plate etcher powered by a dual frequency (VHF + LF). Modeling and Simulations also confirmed the details captured in the IED.

  9. Viscosity measurements of crystallizing andesite from Tungurahua volcano (Ecuador)

    PubMed Central

    Cimarelli, Corrado; deBiasi, Lea; Hanson, Jonathan B.; Lavallée, Yan; Arzilli, Fabio; Dingwell, Donald B.

    2015-01-01

    Abstract Viscosity has been determined during isothermal crystallization of an andesite from Tungurahua volcano (Ecuador). Viscosity was continuously recorded using the concentric cylinder method and employing a Pt‐sheathed alumina spindle at 1 bar and from 1400°C to subliquidus temperatures to track rheological changes during crystallization. The disposable spindle was not extracted from the sample but rather left in the sample during quenching thus preserving an undisturbed textural configuration of the crystals. The inspection of products quenched during the crystallization process reveals evidence for heterogeneous crystal nucleation at the spindle and near the crucible wall, as well as crystal alignment in the flow field. At the end of the crystallization, defined when viscosity is constant, plagioclase is homogeneously distributed throughout the crucible (with the single exception of experiment performed at the lowest temperature). In this experiments, the crystallization kinetics appear to be strongly affected by the stirring conditions of the viscosity determinations. A TTT (Time‐Temperature‐Transformation) diagram illustrating the crystallization “nose” for this andesite under stirring conditions and at ambient pressure has been constructed. We further note that at a given crystal content and distribution, the high aspect ratio of the acicular plagioclase yields a shear‐thinning rheology at crystal contents as low as 13 vol %, and that the relative viscosity is higher than predicted from existing viscosity models. These viscosity experiments hold the potential for delivering insights into the relative influences of the cooling path, undercooling, and deformation on crystallization kinetics and resultant crystal morphologies, as well as their impact on magmatic viscosity.

  10. Viscosity measurements of crystallizing andesite from Tungurahua volcano (Ecuador)

    PubMed Central

    Cimarelli, Corrado; deBiasi, Lea; Hanson, Jonathan B.; Lavallée, Yan; Arzilli, Fabio; Dingwell, Donald B.

    2015-01-01

    Abstract Viscosity has been determined during isothermal crystallization of an andesite from Tungurahua volcano (Ecuador). Viscosity was continuously recorded using the concentric cylinder method and employing a Pt‐sheathed alumina spindle at 1 bar and from 1400°C to subliquidus temperatures to track rheological changes during crystallization. The disposable spindle was not extracted from the sample but rather left in the sample during quenching thus preserving an undisturbed textural configuration of the crystals. The inspection of products quenched during the crystallization process reveals evidence for heterogeneous crystal nucleation at the spindle and near the crucible wall, as well as crystal alignment in the flow field. At the end of the crystallization, defined when viscosity is constant, plagioclase is homogeneously distributed throughout the crucible (with the single exception of experiment performed at the lowest temperature). In this experiments, the crystallization kinetics appear to be strongly affected by the stirring conditions of the viscosity determinations. A TTT (Time‐Temperature‐Transformation) diagram illustrating the crystallization “nose” for this andesite under stirring conditions and at ambient pressure has been constructed. We further note that at a given crystal content and distribution, the high aspect ratio of the acicular plagioclase yields a shear‐thinning rheology at crystal contents as low as 13 vol %, and that the relative viscosity is higher than predicted from existing viscosity models. These viscosity experiments hold the potential for delivering insights into the relative influences of the cooling path, undercooling, and deformation on crystallization kinetics and resultant crystal morphologies, as well as their impact on magmatic viscosity. PMID:27656114

  11. Improved Re-Crystallization of p+ Poly-Si Gates with Molecular Ion Implantation

    NASA Astrophysics Data System (ADS)

    Lee, Jin-Ku; Ju, Min-Ae; Oh, Jae-Geun; Hwang, Sun-Hwan; Jeon, Seung-Joon; Ku, Ja-Chun; Park, Sungki; Lee, Kyung-Won; Kim, Steve; Ra, Geum-Joo; Reece, Ron; Rubin, Leonard M.; Krull, W. A.; Cho, H. T.

    2008-11-01

    Implantation of B18H22 molecules at 80 keV and doses up to 4×1016 cm-2 were evaluated for the application of p-type counterdoping of in situ n-type doped polysilicon gates. Compared to conventional B implants, molecular implantation provides greatly improved throughput without the risk of energy contamination. Implants at these high doses resulted in poor re-crystallization of the polysilicon layer due to the formation of excessive cluster-type defects. Subjecting the polysilicon to either UV-curing or low temperature soak annealing prior to dopant activation was not effective in improving the re-crystallization process. However, breaking the dose into two portions at two different energies was shown to significantly improve re-crystallization of the polysilicon layer. Improved dopant activation was confirmed by a >90% reduction in ring oscillator delay time on a 60 nm PMOSFET.

  12. Measuring the x-ray resolving power of bent potassium acid phthalate diffraction crystals

    SciTech Connect

    Haugh, M. J. Jacoby, K. D.; Wu, M.; Loisel, G. P.

    2014-11-15

    This report presents the results from measuring the X-ray resolving power of a curved potassium acid phthalate (KAP(001)) spectrometer crystal using two independent methods. It is part of a continuing effort to measure the fundamental diffraction properties of bent crystals that are used to study various characteristics of high temperature plasmas. Bent crystals like KAP(001) do not usually have the same diffraction properties as corresponding flat crystals. Models that do exist to calculate the effect of bending the crystal on the diffraction properties have simplifying assumptions and their accuracy limits have not been adequately determined. The type of crystals that we measured is being used in a spectrometer on the Z machine at Sandia National Laboratories in Albuquerque, New Mexico. The first technique for measuring the crystal resolving power measures the X-ray spectral line width of the characteristic lines from several metal anodes. The second method uses a diode X-ray source and a double crystal diffractometer arrangement to measure the reflectivity curve of the KAP(001) crystal. The width of that curve is inversely proportional to the crystal resolving power. The measurement results are analyzed and discussed.

  13. The Si ribbon crystal for the solar battery using the horizontal pull method

    NASA Technical Reports Server (NTRS)

    Norifuji, H.; Matsuo, M.; Maki, T.

    1979-01-01

    A method utilizing a device to spray noble gases to cool the site of silicon crystal growth is described. The salient points are: (1) soft and uniform cooling was possible, (2) the length of the boundary surface of growth along the growth direction was made long over a wide width compared to the thickness, and (3) this made it possible to effectively remove the heat produced from solification. By using forced gas spraying on the solution surface in contact with the points of crystal growth, growth at the points of growth is enhanced and the rate of growth is speeded up.

  14. Single crystal growth and heat capacity measurements of triangular lattice R2Pt6Ga15 (R =rare earth)

    NASA Astrophysics Data System (ADS)

    Matsumoto, Y.; Ueda, T.; Ohara, S.

    2016-02-01

    We have succeeded in synthesizing the single crystal of R2Pt6Ga15 (R=La-Nd, Sm- Lu) with hexagonal Sc0.67Fe2Si5-type structure using Ga self flux method. The crystal structure was confirmed by the powder X-ray method. The unit-cell volume V of R2Pt6Ga15 follows the lanthanide concentration except R = Ce, Eu and Yb, indicating that the valences of R = La, Pr, Nd, Sm, Gd-Tm, and Lu ion are trivalent, whereas those of R = Ce, Eu and Yb ion are deviate from trivalent. We have measured the specific heat C(T) of R2Pt6Ga15. It is found that the magnetic order takes place in R2Pt6Ga15 (R=Pr, Nd, Sm-Tm). Moreover, the multiple phase transitions were observed in R2Pt6Ga15 (R = Nd, Eu, Gd and Ho).

  15. Absolute specific heat measurements of a microgram Pb crystal using ac nanocalorimetry

    NASA Astrophysics Data System (ADS)

    Tagliati, S.; Rydh, A.

    2012-12-01

    Heat capacity measurements using the ac steady state method are often considered difficult to provide absolute accuracy. By adjusting the working frequency to maintain a constant phase and using the phase information to obtain the heat capacity, we have found that it is possible to achieve good absolute accuracy. Here we present a thermodynamic study of a ~ 2.6 μg Pb superconducting crystal to demonstrate the newly opened capabilities. The sample is measured using a differential membrane-based calorimeter. The custom-made calorimetric cell is a pile of thin film Ti heater, insulation layer and Ge1-xAux thermometer fabricated in the center of two Si3N4 membranes. It has a background heat capacity < 100 nJ/K at 300 K, decreasing to 9 pJ/K at 1 K. The sample is characterized at temperatures down to 0.5 K. The zero field transition at Tc = 7.21 K has a width asymp 20 mK and displays no upturn in C. From the heat capacity jump at Tc and the extrapolated Sommerfeld term we find ΔC/γTc = 2.68. The latent heat curve obtained from the zero field heat capacity measurement, and the deviations of the thermodynamic critical field from the empirical expression Hc = Hc (0) [1 - (T/Tc)2] are discussed. Both analyses give results in good agreement with literature.

  16. Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond: evaluation of efficiency of Si doping from gas phase

    NASA Astrophysics Data System (ADS)

    Ralchenko, Victor; Sedov, Vadim; Saraykin, Vladimir; Bolshakov, Andrey; Zavedeev, Evgeny; Ashkinazi, Evgeny; Khomich, Andrew

    2016-09-01

    Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4-H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10-3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond.

  17. Hydrodechlorination of chlorobenzene over NiB/SiO 2 and NiP/SiO 2 amorphous catalysts after being partially crystallized: A consideration of electronic and geometrical factors

    NASA Astrophysics Data System (ADS)

    Chen, Jixiang; Ci, Donghui; Wang, Rijie; Zhang, Jiyan

    2008-12-01

    The effect of electronic and geometrical factors on the performance of the crystallized Ni-B and Ni-P amorphous alloys in the gas-phase hydrodechlorination (HDC) was investigated by means of N 2 adsorption, inductively coupled plasma spectroscopy (ICP), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy-dispersion X-ray spectroscopy (EDS), hydrogen chemisorption, hydrogen temperature-programmed desorption (H 2-TPD), and the activity evaluation. Through the thermal treatment at 673 K in H 2 flow, SiO 2-supported Ni-B amorphous alloy was partially crystallized to metallic Ni, while SiO 2-supported Ni-P amorphous alloy was partially crystallized to metallic Ni and Ni 3P. The crystallized catalysts have smaller metallic crystallites than SiO 2-supported Ni, a reference catalyst prepared by the impregnation method. B and P make different effects on the electron density of nickel in the crystallized samples. It is suggested that the electronic property of Ni strongly affects the catalyst activity, and the electron deficiency of nickel is favorable to promoting the hydrodechlorination of chlorobenzene. Turnover frequency (TOF) of the hydrodechlorination is related to the electronic and geometrical properties of the catalysts.

  18. X-ray diffraction on the X-cut of a Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} single crystal modulated by a surface acoustic wave

    SciTech Connect

    Irzhak, D. Roshchupkin, D.

    2014-06-28

    The result of X-ray diffraction study on a single crystal of the calcium-gallogermanate family Ca{sub 3}TaGa{sub 3}Si{sub 2}O{sub 14} (CTGS) modulated by a surface acoustic wave (SAW) is presented. The power flow angle for SAW propagating along the X{sub 2} axis of the X-cut in CTGS was measured. The rocking curves for the CTGS crystal were recorded at different amplitudes of an input high frequency electric signal on interdigital transducer used to excite a SAW. Based on the data obtained, intensity dependence of diffraction satellites on the amplitude of electric signal exciting a SAW was built. Numerical simulation of the crystal rocking curves and dependence of diffraction satellite intensities on the SAW amplitude enabled the selection of a set of material constants at which the most complete coincidence of experimental and calculated results is observed.

  19. Growth of SiC single crystals on patterned seeds by a sublimation method

    NASA Astrophysics Data System (ADS)

    Yang, Xianglong; Chen, Xiufang; Peng, Yan; Xu, Xiangang; Hu, Xiaobo

    2016-04-01

    Growth of 6H-SiC on patterned seeds with the vertical sidewalls composed of {11-20} and {1-100} faces by a sublimation method at 1700-2000 °C was studied. Anisotropy in lateral growth rates was observed, i.e the growth rate towards <11-20> was faster than that along <1-100>. It was found that free lateral growth on mesas was accompanied by a sharp decrease in the density of threading dislocation. The dependence of lateral growth rate on growth conditions such as reactor pressure and growth temperature was investigated. The factors governing the process of lateral growth of 6H-SiC on patterned seeds were discussed.

  20. Genetic algorithm prediction of crystal structure of metastable Si-IX phase

    SciTech Connect

    Nguyen, Manh Cuong; Zhao, Xin; Wang, Yangang; Wang, Cai-Zhuang; Ho, Kai-Ming

    2013-12-14

    We performed genetic algorithm search for the atomic structure of the long Lime unsolved Si-IX phase. We found two new structures with space groups of P4(2)/m and P-4, respectively, which have lattice parameters in excellent agreement with the experimental data. The phonon calculations showed that the P4(2)/m structure exhibits a soft phonon mode, while the P-4 structure is dynamically stable. Our calculation also showed that the P-4 structure is a meta-stable structure in a pressure range from 0 to 40 GPa, The Si-IX phase could be a mixed phase consisting of the P4(2)/m and the P-4 structures. Published by Elsevier Ltd.

  1. Discovery of iron group impurity ion spin states in single crystal Y{sub 2}SiO{sub 5} with strong coupling to whispering gallery photons

    SciTech Connect

    Goryachev, Maxim; Farr, Warrick G.; Carmo Carvalho, Natalia do; Creedon, Daniel L.; Le Floch, Jean-Michel; Probst, Sebastian; Bushev, Pavel; Tobar, Michael E.

    2015-06-08

    Interaction of Whispering Gallery Modes (WGMs) with dilute spin ensembles in solids is an interesting paradigm of Hybrid Quantum Systems potentially beneficial for Quantum Signal Processing applications. Unexpected ion transitions are measured in single crystal Y{sub 2}SiO{sub 5} using WGM spectroscopy with large Zero Field Splittings at 14.7 GHz, 18.4 GHz, and 25.4 GHz, which also feature considerable anisotropy of the g-tensors as well as two inequivalent lattice sites, indicating spins from Iron Group Ion (IGI) impurities. The comparison of undoped and Rare-Earth doped crystals reveal that the IGIs are introduced during co-doping of Eu{sup 3+} or Er{sup 3+} with concentration at much lower levels of order 100 ppb. The strong coupling regime between an ensemble of IGI spins and WGM photons have been demonstrated at 18.4 GHz and near zero field. This approach together with useful optical properties of these ions opens avenues for “spins-in-solids” Quantum Electrodynamics.

  2. Gompertz type dechanneling functions for protons in <1 0 0>, <1 1 0> and <1 1 1> Si crystal channels

    NASA Astrophysics Data System (ADS)

    Petrović, S.; Erić, M.; Kokkoris, M.; Nešković, N.

    2007-03-01

    In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters for protons in <1 0 0>, <1 1 0> and <1 1 1> Si crystal channels is investigated theoretically. The proton energy range considered is between 1 and 10 MeV. The original dechanneling functions are generated using a realistic Monte Carlo computer simulation code. We show that the Gompertz type dechanneling function, having two parameters, lc and k, representing the dechanneling range and rate, respectively, approximate accurately the original dechanneling function. It is also shown that the energy dependences of parameters lc and k can be approximated by a linear function and a sum of two exponential functions, respectively. The results obtained can be used for accurate reproduction of experimental proton channeling spectra recorded in the backscattering geometry.

  3. On the ratio of magnetic losses in Fe-3% Si single crystals in rotating and linear-polarized magnetic fields

    NASA Astrophysics Data System (ADS)

    Tiunov, V. F.

    2012-12-01

    The behavior of the magnetic losses in Fe-Si crystals in rotating and linear-polarized fields has been studied and particular features of the dependence of the ratio of these losses on the induction amplitude have been revealed. It has been demonstrated that abnormally high magnitudes of magnetic losses in rotating fields at low induction values ( B < 1.0 T) are caused by the nonuniformity of the displacement speeds of 180° walls of the stripe domain structure. At high induction values ( B > 1.0 T), the high magnitude of magnetic losses is caused by particular features of the motion of 90° and 180° walls of the closure domain structure of the tested samples.

  4. Yb:Lu2SiO5 crystal : characterization of the laser emission along the three dielectric axes

    NASA Astrophysics Data System (ADS)

    Toci, Guido; Pirri, Angela; Beitlerova, Alena; Shoji, Yasuhiro; Yoshikawa, Akira; Hybler, Jiri; Nikl, Martin; Vannini, Matteo

    2015-05-01

    Yb:doped Lu2SiO5 (Lutetium orthosilicate, LSO) is an optically biaxial crystal with laser emission in the range 1000- 1100 nm. It features different absorption and emission spectra for polarization along its three dielectric axes. In this work we have characterized the laser emission properties of Yb:LSO along all the three dielectric axis, evidencing differences that can be exploited in the design of ultrafast laser sources. The material was tested in a longitudinally pumped laser cavity. The laser emission efficiency was found similar along all the three dielectric axes, with slope efficiencies around 90% in most cases. Regarding the tuning range, for the most favourable polarization direction we obtained a continuously tunable emission between 993 and 1088 nm (i. e. 95 nm) peaked at 1040 nm. The tuning curves along the three dielectric axes spanned similar ranges but with relevant differences in the shape.

  5. CW and passively Q-switched laser performance of Nd:Lu2SiO5 crystal

    NASA Astrophysics Data System (ADS)

    Xu, Xiaodong; Di, Juqing; Zhang, Jian; Tang, Dingyuan; Xu, Jun

    2016-01-01

    We demonstrated an efficient and controllable dual-wavelength continuous-wave (CW) laser of Nd:Lu2SiO5 (Nd:LSO) crystal. The maximum output power was 3.02 W at wavelength of 1075 nm and 1079 nm, and with increasing of absorbed pump power, the ratio of 1079 nm laser rose. The slope efficiency of 65.6% and optical-to-optical conversion efficiency of 63.3% were obtained. The passively Q-switched laser properties of Nd:LSO were investigated for the first time. The shortest pulse, maximum pulse energy and peak power were 11.58 ns, 29.05 μJ and 2.34 kW, respectively.

  6. Synthesis, crystal structure and properties of Mg{sub 3}B{sub 36}Si{sub 9}C and related rare earth compounds RE{sub 3−x}B{sub 36}Si{sub 9}C (RE=Y, Gd–Lu)

    SciTech Connect

    Ludwig, Thilo; Pediaditakis, Alexis; Sagawe, Vanessa; Hillebrecht, Harald

    2013-08-15

    We report on the synthesis and characterisation of Mg{sub 3}B{sub 36}Si{sub 9}C. Black single crystals of hexagonal shape were yielded from the elements at 1600 °C in h-BN crucibles welded in Ta ampoules. The crystal structure (space group R3{sup ¯}m, a=10.0793(13) Å, c=16.372(3) Å, 660 refl., 51 param., R{sub 1}(F)=0.019; wR{sub 2}(F{sup 2})=0.051) is characterized by a Kagome-net of B{sub 12} icosahedra, ethane like Si{sub 8}-units and disordered SiC-dumbbells. Vibrational spectra show typical features of boron-rich borides and Zintl phases. Mg{sub 3}B{sub 36}Si{sub 9}C is stable against HF/HNO{sub 3} and conc. NaOH. The micro-hardness is 17.0 GPa (Vickers) and 14.5 GPa (Knoop), respectively. According to simple electron counting rules Mg{sub 3}B{sub 36}Si{sub 9}C is an electron precise compound. Band structure calculations reveal a band gap of 1.0 eV in agreement to the black colour. Interatomic distances obtained from the refinement of X-ray data are biased and falsified by the disorder of the SiC-dumbbell. The most evident structural parameters were obtained by relaxation calculation. Composition and carbon content were confirmed by WDX measurements. The small but significant carbon content is necessary by structural reasons and frequently caused by contaminations. The rare earth compounds RE{sub 3−x}B{sub 36}Si{sub 9}C (RE=Y, Dy–Lu) are isotypic. Single crystals were grown from a silicon melt and their structures refined. The partial occupation of the RE-sites fits to the requirements of an electron-precise composition. According to the displacement parameters a relaxation should be applied to obtain correct structural parameters. - Graphical abstract: Single crystals of the new boridesilicide Mg{sub 3}B{sub 36}Si{sub 9}C were obtained from the elements in a Si-melt. Besides B{sub 12}-icosahedra and ethan-like Si{sub 8}-units it contains a disordered SiC-dumbbell. Correct distances were obtained by relaxation calculation based on the X-ray data

  7. Layered hydride CaNiGeH with a ZrCuSiAs-type structure: crystal structure, chemical bonding, and magnetism induced by Mn doping.

    PubMed

    Liu, Xiaofeng; Matsuishi, Satoru; Fujitsu, Satoru; Ishigaki, Toru; Kamiyama, Takashi; Hosono, Hideo

    2012-07-18

    Stimulated by the discovery of the iron oxypnictide superconductor with ZrCuSiAs-type structure in 2008, extensive exploration of its isostructural and isoelectronic compounds has started. These compounds, including oxides, fluorides, and hydrides, can all be simply recognized as valence compounds for which the octet rule is valid. We report herein the first example of a ZrCuSiAs-type hydride, CaNiGeH, which violates the octet rule. This hydride was synthesized by hydrogenation of the CeFeSi-type compound CaNiGe under pressurized hydrogen. Powder diffraction and theoretical simulation confirm that H enters into the interstitial position of the Ca(4) tetrahedron, leading to notable anisotropic expansion of the unit cell along the c axis. Density functional theory calculations indicate the modification of the chemical bonding and formation of ionic Ca-H bond as a result of hydrogen insertion. Furthermore, CaNiGeH shows Pauli paramagnetism and metallic conduction similar to that of CaNiGe, but its carrier type changes to hole and the carrier density is drastically reduced as compared to CaNiGe. Mn-doping at the Ni site introduces magnetism to both the parent compound and the hydride. The measurement demonstrates that hydrogenation of CaNi(1-x)Mn(x)Ge reduces ferromagnetic ordering of Mn ions and induces huge magnetic hysteresis, whereas the spin glass state observed for the parent compound is preserved in the hydride. The hydrogenation-induced changes in the electric and magnetic properties are interpreted in terms of development of two-dimensionality in crystal structure as well as electronic state.

  8. Delta L: An Apparatus for Measuring Macromolecular Crystal Growth Rates in Microgravity

    NASA Technical Reports Server (NTRS)

    Judge, Russell A.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    In order to determine how macromolecule crystal quality improvement in microgravity is related to crystal growth characteristics, is was necessary to develop new hardware that could measure the crystal growth rates of a population of crystals growing under the same solution conditions. As crystal growth rate is defined as the change or delta in a defined dimension or length (L) of a crystal over time, the hardware was named Delta L. Delta L consists of fluids, optics, and data acquisition, sub-assemblies. Temperature control is provided for the crystal growth chamber. Delta L will be used in connection with the Glovebox Integrated Microgravity Isolation Technology (g-LIMIT) inside the Microgravity Science Glovebox (MSG), onboard the International Space Station (ISS). Delta L prototype hardware has been assembled. This paper will describe an overview of the design of Delta L and present preliminary crystal growth rate data.

  9. Crystal structures of (Mg1;#8722;x,Fex)SiO[subscript 3] postperovskite at high pressures

    SciTech Connect

    Yamanaka, Takamitsu; Hirose, Kei; Mao, Wendy L.; Meng, Yue; Ganesh, P.; Shulenburger, Luke; Shen, Guoyin; Hemley, Russell J.

    2012-03-15

    X-ray diffraction experiments on postperovskite (ppv) with compositions (Mg{sub 0.9}Fe{sub 0.1})SiO{sub 3} and (Mg{sub 0.6}Fe{sub 0.4})SiO{sub 3} at Earth core-mantle boundary pressures reveal different crystal structures. The former adopts the CaIrO{sub 3}-type structure with space group Cmcm, whereas the latter crystallizes in a structure with the Pmcm (Pmma) space group. The latter has a significantly higher density ({rho} = 6.119(1) g/cm{sup 3}) than the former ({rho} = 5.694(8) g/cm{sup 3}) due to both the larger amount of iron and the smaller ionic radius of Fe{sup 2+} as a result of an electronic spin transition observed by X-ray emission spectroscopy (XES). The smaller ionic radius for low-spin compared to high-spin Fe{sup 2+} also leads to an ordered cation distribution in the M1 and M2 crystallographic sites of the higher density ppv structure. Rietveld structure refinement indicates that approximately 70% of the total Fe{sup 2+} in that phase occupies the M2 site. XES results indicate a loss of 70% of the unpaired electronic spins consistent with a low spin M2 site and high spin M1 site. First-principles calculations of the magnetic ordering confirm that Pmcm with a two-site model is energetically more favorable at high pressure, and predict that the ordered structure is anisotropic in its electrical and elastic properties. These results suggest that interpretations of seismic structure in the deep mantle need to treat a broader range of mineral structures than previously considered.

  10. Investigations on the Crystal-Chemical Behavior of Transition-Metal-Bearing Aluminosilicate Garnet Solid Solutions Using 27Al and 29Si NMR Spectroscopy

    NASA Astrophysics Data System (ADS)

    Palke, A. C.; Geiger, C. A.; Stebbins, J. F.

    2015-12-01

    The petrological importance of silicate garnet is derived from the presence of three distinct cation sites of varying size and coordination number. This allows for a wide range of trace, minor, and major element substitutions. However, a full and precise crystal-chemical understanding of the nature of transition metals in garnet is not at hand. Possible mechanisms of various charge-balanced substitutions (e.g. octahedral Ti4+ or tetrahedral Al3+) and the structural state of solid solutions (i.e. short- to long-range ordering) need study. We report on ongoing efforts in these directions using 27Al and 29Si Magic-Angle Spinning Nuclear Magnetic Resonance (MAS-NMR) spectroscopy. Early work on synthetic and natural Fe- and Mn-bearing pyrope- and grossular-rich garnets focused on the effect these paramagnetic transition metals have in measuring and interpreting NMR spectra. These results have been expanded with NMR measurements on synthetic pyrope-rich garnets containing other paramagnetic transition metals including Cr3+, V3+, Co2+, and Ni2+ as well as diamagnetic Ti4+. NMR peaks are severely broadened in the presence of even small concentrations of Cr3+, Mn2+, and Fe3+ leading to a loss of spectral resolution. On the other hand, the spectra of garnet containing V3+, Fe2+, Co2+, and Ni2+ have better resolution and show separate paramagnetically shifted NMR peaks. In some cases, crystal-chemical information can be obtained because of the large frequency separations between the NMR peaks that can be assigned to various local atomic configurations around Al and Si. Furthermore, the 27Al NMR spectrum of a synthetic pyrope garnet with about 2% diamagnetic Ti4+ on the octahedral site showed the absence of any tetrahedral Al3+, which rules out the substitution mechanism VITi + IVAl = VIAl + IVSi in the solid solution. Our NMR investigations on garnet are now being made at the exploratory level. We think that NMR spectra of diamagnetic garnet can provide information on a

  11. Crystal structure, characterization and thermoelectric properties of the type-I clathrate Ba{sub 8-y}Sr{sub y}Al{sub 14}Si{sub 32} (0.6{<=}y{<=}1.3) prepared by aluminum flux

    SciTech Connect

    Roudebush, John H.; Toberer, Eric S.; Hope, Hakon; Jeffrey Snyder, G.; Kauzlarich, Susan M.

    2011-05-15

    The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3-bar n. Electron microprobe characterization indicates the composition to be Ba{sub 8-y}Sr{sub y}Al{sub 14.2(2)}Si{sub 31.8(2)} (0.77crystal X-ray diffraction data (90 and 12 K) were refined with the Al content fixed at the microprobe value (12 K data: R{sub 1}=0.0233, wR{sub 2}=0.0441) on a crystal of compositions Ba. The Sr atom preferentially occupies the 2a position; mixed Al/Si occupancy was found on all framework sites. These refinements are consistent with a fully occupied framework and nearly fully occupied cation guest sites as found by microprobe analysis. Temperature dependent electrical resistivity and thermal conductivity have been measured from room temperature to 1200 K on a hot-pressed pellet. Electrical resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers. Thermal conductivity is between 22 and 25 mW/cm K. The sample shows n-type conductivity with a maximum figure of merit, zT of 0.3 at 1200 K. A single parabolic band model predicts a five-fold increase in zT at 800 K if carrier concentration is lowered. -- Graphical abstract: The inorganic type-I clathrate phase with nominal composition Ba{sub 7}Sr{sub 1}Al{sub 14}Si{sub 32} has been prepared by Al flux. Single crystal diffraction at 90 and 12 K reveal that the framework is fully occupied with the cation sites nearly fully occupied. The lattice thermal conductivity is low thereby suggesting further optimization of the carrier concentration will lead to a high zT. Display Omitted Highlights: {yields} Ba{sub 7}Sr{sub 1}Al{sub 14}Si{sub 32} is a light element phase ideal for thermoelectric power generation. {yields} Ba{sub 7}Sr{sub 1}Al{sub 14}Si{sub 32} is a high melting point cubic

  12. Capillary-force measurement on SiC surfaces.

    PubMed

    Sedighi, M; Svetovoy, V B; Palasantzas, G

    2016-06-01

    Capillary forces have been measured by atomic force microscopy in the sphere-plate geometry, in a controlled humidity environment, between smooth silicon carbide and borosilicate glass spheres. The force measurements were performed as a function of the rms surface roughness ∼4-14 nm mainly due to sphere morphology, the relative humidity (RH) ∼0%-40%, the applied load on the cantilever, and the contact time. The pull-off force was found to decrease by nearly two orders of magnitude with increasing rms roughness from 8 to 14 nm due to formation of a few capillary menisci for the roughest surfaces, while it remained unchanged for rms roughness <8 nm implying fully wetted surface features leading to a single meniscus. The latter reached a steady state in less than 5 s for the smoothest surfaces, as force measurements versus contact time indicated for increased RH∼40%. Finally, the pull-off force increases and reaches a maximum with applied load, which is associated with plastic deformation of surface asperities, and decreases at higher loads. PMID:27415337

  13. Capillary-force measurement on SiC surfaces

    NASA Astrophysics Data System (ADS)

    Sedighi, M.; Svetovoy, V. B.; Palasantzas, G.

    2016-06-01

    Capillary forces have been measured by atomic force microscopy in the sphere-plate geometry, in a controlled humidity environment, between smooth silicon carbide and borosilicate glass spheres. The force measurements were performed as a function of the rms surface roughness ˜4-14 nm mainly due to sphere morphology, the relative humidity (RH) ˜0%-40%, the applied load on the cantilever, and the contact time. The pull-off force was found to decrease by nearly two orders of magnitude with increasing rms roughness from 8 to 14 nm due to formation of a few capillary menisci for the roughest surfaces, while it remained unchanged for rms roughness <8 nm implying fully wetted surface features leading to a single meniscus. The latter reached a steady state in less than 5 s for the smoothest surfaces, as force measurements versus contact time indicated for increased RH˜40%. Finally, the pull-off force increases and reaches a maximum with applied load, which is associated with plastic deformation of surface asperities, and decreases at higher loads.

  14. Capillary-force measurement on SiC surfaces.

    PubMed

    Sedighi, M; Svetovoy, V B; Palasantzas, G

    2016-06-01

    Capillary forces have been measured by atomic force microscopy in the sphere-plate geometry, in a controlled humidity environment, between smooth silicon carbide and borosilicate glass spheres. The force measurements were performed as a function of the rms surface roughness ∼4-14 nm mainly due to sphere morphology, the relative humidity (RH) ∼0%-40%, the applied load on the cantilever, and the contact time. The pull-off force was found to decrease by nearly two orders of magnitude with increasing rms roughness from 8 to 14 nm due to formation of a few capillary menisci for the roughest surfaces, while it remained unchanged for rms roughness <8 nm implying fully wetted surface features leading to a single meniscus. The latter reached a steady state in less than 5 s for the smoothest surfaces, as force measurements versus contact time indicated for increased RH∼40%. Finally, the pull-off force increases and reaches a maximum with applied load, which is associated with plastic deformation of surface asperities, and decreases at higher loads.

  15. Realization of hollow SiO2 micronozzles for electrical measurements on living cells

    NASA Astrophysics Data System (ADS)

    Lehnert, T.; Gijs, M. A. M.; Netzer, R.; Bischoff, U.

    2002-12-01

    We present a microfluidic device for the immobilization and electrical measurements, such as patch-clamp or impedance measurements, on individual living cells. Micron-sized hollow SiO2 nozzles are realized in Si wafers using a deep plasma etching process. The micronozzles are integrated with glass wafers containing microfluidic channels and Ag/AgCl electrodes. Reliable cell positioning on the nozzles via hydrodynamic forces is obtained. Relevant electrical parameters of the system, especially seal resistances between attached cells and the nozzle, are determined.

  16. Simulation and Measurement of Absorbed Dose from 137 Cs Gammas Using a Si Timepix Detector

    NASA Technical Reports Server (NTRS)

    Stoffle, Nicholas; Pinsky, Lawrence; Empl, Anton; Semones, Edward

    2011-01-01

    The TimePix readout chip is a hybrid pixel detector with over 65k independent pixel elements. Each pixel contains its own circuitry for charge collection, counting logic, and readout. When coupled with a Silicon detector layer, the Timepix chip is capable of measuring the charge, and thus energy, deposited in the Silicon. Measurements using a NIST traceable 137Cs gamma source have been made at Johnson Space Center using such a Si Timepix detector, and this data is compared to simulations of energy deposition in the Si layer carried out using FLUKA.

  17. Thermodynamic analysis of binary Fe85B15 to quinary Fe85Si2B8P4Cu1 alloys for primary crystallizations of α-Fe in nanocrystalline soft magnetic alloys

    NASA Astrophysics Data System (ADS)

    Takeuchi, A.; Zhang, Y.; Takenaka, K.; Makino, A.

    2015-05-01

    Fe-based Fe85B15, Fe84B15Cu1, Fe82Si2B15Cu1, Fe85Si2B12Cu1, and Fe85Si2B8P4Cu1 (NANOMET®) alloys were experimental and computational analyzed to clarify the features of NANOMET that exhibits high saturation magnetic flux density (Bs) nearly 1.9 T and low core loss than conventional nanocrystalline soft magnetic alloys. The X-ray diffraction analysis for ribbon specimens produced experimentally by melt spinning from melts revealed that the samples were almost formed into an amorphous single phase. Then, the as-quenched samples were analyzed with differential scanning calorimeter (DSC) experimentally for exothermic enthalpies of the primary and secondary crystallizations (ΔHx1 and ΔHx2) and their crystallization temperatures (Tx1 and Tx2), respectively. The ratio ΔHx1/ΔHx2 measured by DSC experimentally tended to be extremely high for the Fe85Si2B8P4Cu1 alloy, and this tendency was reproduced by the analysis with commercial software, Thermo-Calc, with database for Fe-based alloys, TCFE7 for Gibbs free energy (G) assessments. The calculations exhibit that a volume fraction (Vf) of α-Fe tends to increase from 0.56 for the Fe85B15 to 0.75 for the Fe85Si2B8P4Cu1 alloy. The computational analysis of the alloys for G of α-Fe and amorphous phases (Gα-Fe and Gamor) shows that a relationship Gα-Fe ˜ Gamor holds for the Fe85Si2B12Cu1, whereas Gα-Fe < Gamor for the Fe85Si2B8P4Cu1 alloy at Tx1 and that an extremely high Vf = 0.75 was achieved for the Fe85Si2B8P4Cu1 alloy by including 2.8 at. % Si and 4.5 at. % P into α-Fe. These computational results indicate that the Fe85Si2B8P4Cu1 alloy barely forms amorphous phase, which, in turn, leads to high Vf and resultant high Bs.

  18. Measuring the X-ray Resolving Power of Bent Potassium Acid Phthalate Diffraction Crystals

    SciTech Connect

    Haugh, M. J.; Wu, M.; Jacoby, K. D.; Loisel, G. P.

    2014-11-01

    This report presents the results from measuring the X-ray resolving power of a curved potassium acid phthalate (KAP(001)) spectrometer crystal using two independent methods. It is part of a continuing effort to measure the fundamental diffraction properties of bent crystals that are used to study various characteristics of high temperature plasmas. Bent crystals like KAP(001) do not usually have the same diffraction properties as corresponding flat crystals. Models that do exist to calculate the effect of bending the crystal on the diffraction properties have simplifying assumptions and their accuracy limits have not been adequately determined. The type of crystals that we measured is being used in a spectrometer on the Z machine at Sandia National Laboratories (SNL) in Albuquerque, NM. The first technique for measuring the crystal resolving power measures the X-ray spectral line width of the characteristic lines from several metal anodes. The second method uses a diode X-ray source and a dual goniometer arrangement to measure the reflectivity curve of the KAP(001) crystal. The width of that curve is inversely proportional to the crystal resolving power. The measurement results are analyzed and discussed.

  19. Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon.

    PubMed

    Kail, F; Molera, J; Farjas, J; Roura, P; Secouard, C; Roca i Cabarrocas, P

    2012-03-01

    The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 °C and 1.7 eV, respectively, the 'standard' values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.

  20. Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Kail, F.; Molera, J.; Farjas, J.; Roura, P.; Secouard, C.; Cabarrocas, P. Roca i.

    2012-03-01

    The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 °C and 1.7 eV, respectively, the ‘standard’ values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.

  1. A visual and organic vapor sensitive photonic crystal sensor consisting of polymer-infiltrated SiO2 inverse opal.

    PubMed

    Zhang, Yuqi; Qiu, Jianhua; Hu, Rongrong; Li, Pei; Gao, Loujun; Heng, Liping; Tang, Ben Zhong; Jiang, Lei

    2015-04-21

    A photonic crystal (PC) sensor that can selectively detect organic vapors through visual color changes has been proposed. The sensor was fabricated by infiltrating a tetraphenylethene polymer (TPEP) into the voids of SiO2 inverse opal photonic crystal. When the sensor was exposed to tetrahydrofuran or acetone vapor, a red shift of the stopband of more than 50 nm could be clearly observed; meanwhile, the film's color changed from violet to cyan. Subsequently, when exposed to air, the stopband underwent a blue shift and the color returned to violet. The reason for the observed change is that a reversible adsorption-desorption process occurs on alternate exposure of the sensor to organic vapor and air, due to the high specific surface area of the inverse opal macroporous structure and the high affinity of TPEP to tetrahydrofuran and acetone. The adsorption of vapor analyte can increase the PC's effective refractive index, which will induce the stopband red shift and the resulting color change according to Bragg's Law. The reversible adsorption-desorption of organic vapors varied the effective refractive index of the sensor repeatedly, causing the reversible stopband shift and color change, and providing a general method for the design of visual vapor sensors. PMID:25777537

  2. Investigation of Ca3TaGa3Si2O14 piezoelectric crystals for high temperature sensors

    NASA Astrophysics Data System (ADS)

    Yu, Fapeng; Zhang, Shujun; Zhao, Xian; Yuan, Duorong; Qin, Lifeng; Wang, Qing-ming; Shrout, Thomas R.

    2011-06-01

    The dielectric and electromechanical properties of fully ordered Ca3TaGa3Si2O14 (CTGS) crystals were investigated over the temperature range of -60˜700 °C. The highest electromechanical coupling factor, k26 (18.9%) and piezoelectric coefficient, d26 (-11.5 pC/N) were obtained for (YXl)-25° cuts. The temperature dependent behavior of resonance frequency (fr) was investigated in single-rotated thickness shear mode (TSM) (YXl)θ cuts (θ = -35°˜10°). The turnover temperatures of resonance frequency were found to increase from 20 °C to 330 °C, as the rotation angle θ varied from -22.5° to -35°. Bulk acoustic wave (BAW) resonators based on Y(-30°) monolithic disks with a fundamental frequency ˜2.87 MHz were fabricated, where the in air mechanical quality factor Q was found to be on the order of 24000 and 10000 at 20 °C and 700 °C, respectively. The high coupling k26, high mechanical Q, and high electrical resistivity (16 MΩ.cm) at 700 °C, together with the near zero TCF characteristics at elevated temperatures, demonstrate the potential of CTGS crystals for high temperature sensor applications.

  3. A visual and organic vapor sensitive photonic crystal sensor consisting of polymer-infiltrated SiO2 inverse opal.

    PubMed

    Zhang, Yuqi; Qiu, Jianhua; Hu, Rongrong; Li, Pei; Gao, Loujun; Heng, Liping; Tang, Ben Zhong; Jiang, Lei

    2015-04-21

    A photonic crystal (PC) sensor that can selectively detect organic vapors through visual color changes has been proposed. The sensor was fabricated by infiltrating a tetraphenylethene polymer (TPEP) into the voids of SiO2 inverse opal photonic crystal. When the sensor was exposed to tetrahydrofuran or acetone vapor, a red shift of the stopband of more than 50 nm could be clearly observed; meanwhile, the film's color changed from violet to cyan. Subsequently, when exposed to air, the stopband underwent a blue shift and the color returned to violet. The reason for the observed change is that a reversible adsorption-desorption process occurs on alternate exposure of the sensor to organic vapor and air, due to the high specific surface area of the inverse opal macroporous structure and the high affinity of TPEP to tetrahydrofuran and acetone. The adsorption of vapor analyte can increase the PC's effective refractive index, which will induce the stopband red shift and the resulting color change according to Bragg's Law. The reversible adsorption-desorption of organic vapors varied the effective refractive index of the sensor repeatedly, causing the reversible stopband shift and color change, and providing a general method for the design of visual vapor sensors.

  4. Crystallization behavior and properties of BaO-Al2O3-2SiO2 glass matrices

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III; Bansal, Narottam P.

    1990-01-01

    Glass of stoichiometric celsian composition, BaO-Al2O3-2SiO2, is a potential glass-ceramic matrix for high-temperature composites. The glass has a density of 3.39 g/cu cm, thermal expansion coefficient of 6.6 x 10(exp -6)/deg C glass transition temperature of 910 C, and dilatometric softening point of 925 C. On heat treatment, only hexacelsian crystallized out on the surface, but both celsian and hexacelsian were present in the bulk. Effects of cold isostatic pressing (CIP), sintering, and hot pressing, in the presence and absence of an additive, on the formation of the celsian phase in the glass were studied. CIP'ed samples, after appropriate heat treatments, always crystallized out as celsian whereas the presence of 5 to 10 weight percent of an additive was necessary for formation of celsian in sintered as well as hot pressed specimens. Green density increased with CIP'ing pressure but had no effect on sintered density. Hot pressing resulted in fully dense samples.

  5. Effects of Contact Resistance on Electrical Conductivity Measurements of SiC-Based Materials

    SciTech Connect

    Youngblood, Gerald E.; Thomsen, Edwin C.; Henager, Charles H.

    2012-04-17

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from RT to ~700°C. The specific contact resistance values (Rc) behaved similarly for each type of metallic electrode: Rc >~1000 Ω-cm2 at RT, decreasing continuously to ~1-10 Ω-cm2 at 700°C. The temperature dependence of the inverse Rc indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by ~1/2.

  6. Spin alignment and density matrix measurement in sup 28 Si + sup 12 C orbiting reaction

    SciTech Connect

    Ray, A.; Shapira, D.; Halbert, M.L.; Gomez del Campo, J.; Kim, H.J. ); Sullivan, J.P. . Cyclotron Inst.); Shivakumar, B.; Mitchell, J. . Wright Nuclear Structure Lab.)

    1990-01-01

    Gamma-ray angular correlations have been measured for the strongly damped reactions {sup 12}C({sup 28}Si,{sup 12}C){sup 28}Si between {theta}{sub cm} = (120{degree} {minus} 160{degree}) for E{sub cm} = 43.5 and 48 MeV. We find that the density matrices for the {sup 12}C(2{sub 1}{sup +}) and {sup 28}Si states are almost diagonal with respect to the direction of motion of the outgoing particle. The measured density matrices and spin alignments are consistent with the picture of formation of a long-lived dinuclear complex undergoing orbiting, bending and wriggling motions, but not with those obtained from statistical compound nucleus or sticking model calculations. 17 refs., 2 figs., 1 tab.

  7. Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

    NASA Astrophysics Data System (ADS)

    Medenwaldt, R.; Møller, S. P.; Tang-Petersen, S.; Uggerhøj, E.; Elsener, K.; Hage-Ali, M.; Siffert, P.; Stoquert, J.; Sona, P.; Maier, K.

    1990-06-01

    The dramatic peak found in photon spectra from 150 GeV channelled electrons has for the first time been investigated for 70, 150, and 240 GeV electrons incident on crystals with thickness from 100μ (Si). Very pronounced variations for the high energy part of the photon spectra are found. In Si the photon peak is not found for lower energies and thin crystals. For well-aligned electrons in Si the yield is more than 160 times the Bethe-Heitler one. In general the peak in the photon spectra disaapears for incident angles larger than half the critical angle for channeling. Dramatic radiative energy losses are found along axial directions - in 0.6 mm <110> Ge a 150 GeV electron loses more than 60% of its total energy.

  8. Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Wang, K. L.; Zwerdling, S.

    1982-01-01

    Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

  9. Depth-of-interaction measurement in a single-layer crystal array with a single-ended readout using digital silicon photomultiplier.

    PubMed

    Lee, Min Sun; Lee, Jae Sung

    2015-08-21

    We present the first experimental evaluation of a depth-of-interaction (DOI) positron emission tomography (PET) detector using a digital silicon photomultiplier (dSiPM). To measure DOI information from a mono-layer array of scintillation crystals with a single-ended readout, our group has previously proposed and developed a new method based on light spread using triangular reflectors. Since this method relies on measurement of the light distribution, dSiPM, which has a fully digital interface, has several merits for our DOI measurement. The DOI PET detector comprised of a dSiPM sensor (DPC-3200-22-44) coupled with a 14   ×   14 array of 2 mm  ×  2 mm  ×  20 mm unpolished LGSO crystals. All crystals were covered with triangular reflectors. To obtain a good performance of the DOI PET detector, several parameters of detector were selected as a preliminary experiment. Detector performance was evaluated with the selected parameters and the optimal experimental setup, and a DOI measurement was conducted by irradiating the crystal block at five DOI positions spaced at intervals of 4 mm. Maximum-likelihood estimation was employed for DOI positioning and the optimal DOI estimation scheme was also investigated in this study. As a result, the DOI PET detector showed clear crystal identification. The energy resolution (full-width at half-maximum (FWHM)) averaged over all depths was 10.21%  ±  0.15% at 511 keV, and time resolution averaged over all depths was 1198.61   ±   39.70 ps FWHM. The average DOI positioning accuracy for all depths was 74.22%  ±  6.77%, which equates to DOI resolution of 4.67 mm. Energy and DOI resolutions were uniform over all crystal positions except for the back parts of the array. Furthermore, additional simulation studies were conducted to verify the results of our DOI measurement method that is combined with dSiPM technology. In conclusion, our continuous DOI PET detector

  10. A research of weak absorption measurements in crystal based on photothermal interferometry

    NASA Astrophysics Data System (ADS)

    Chen, Bing; Liu, Zongkai; Wang, Shiwu

    2013-07-01

    It is important for testing the process of crystal growing and crystal quality. This paper built a mathematical model based on principle of photothermal common-path interferometry, the index change induced in the crystal by the heating pump beam and the phase distortion of probe beam in the heated area are presented then obtain the intensity distribution of the interference in the near filed. Optical geometry of focusing pump beam and intersecting pump and probe beams at waist position of the pump beam is used. This optical instruction can be adjusted easily and stabilized. Now CRYSTECH have the largest NLO crystals product line in the world, especially KTP crystals. With absorption measurements in nonlinear laser crystal KTP as an example to investigate the experimental parameters affecting the photothermal interference signal and high measuring precision. The analysis of experimental data showed this kind of instruction can reach the measurement accuracy of 0.1ppm.

  11. Boron suboxide crystal: high pressure synthesis and hardness measurement

    NASA Astrophysics Data System (ADS)

    He, Duanwei

    2002-03-01

    B6O crystal growth from the B-B2O3 system was investigated at 1700-2200 ¡ãC and 4.5-6.5 GPa by using two different sample assemblies. Single B6O crystals over 100 mm in size have been synthesized at 5.5 GPa and 2100 ¡ãC. This makes it possible to study the properties of this interesting material. The factors affecting the B6O crystal morphology, size, colour, and growth process were discussed. The solubility of B6O in B2O3 flux was estimated at 5.5 GPa and different temperatures. Based on the experimental results, we suggest two methods to grow large B6O crystal.

  12. Transport Measurements on Si Nanostructures with Counted Sb Donors

    NASA Astrophysics Data System (ADS)

    Singh, Meenakshi; Bielejec, Edward; Garratt, Elias; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

    2014-03-01

    Donor based spin qubits are a promising platform for quantum computing. Single qubits using timed implant of donors have been demonstrated.1 Extending this to multiple qubits requires precise control over the placement and number of donors. Such control can be achieved by using a combination of low-energy heavy-ion implants (to reduce depth straggle), electron-beam lithography (to define position), focused ion beam (to localize implants to one lithographic site) and counting the number of implants with a single ion detector.2 We report transport measurements on MOS quantum dots implanted with 5, 10 and 20 Sb donors using the approach described above. A donor charge transition is identified by a charge offset in the transport characteristics. Correlation between the number of donors and the charge offsets is studied. These results are necessary first steps towards fabricating donor nanostructures for two qubit interactions. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. 1J. J. Pla et al., Nature 496, 334 (2013) 2J. A. Seamons et al., APL 93, 043124 (2008).

  13. Measurements of Si hybrid CMOS x-ray detector characteristics

    NASA Astrophysics Data System (ADS)

    Bongiorno, Stephen D.; Falcone, Abe D.; Burrows, David N.; Cook, Robert; Bai, Yibin; Farris, Mark

    2009-08-01

    The development of Hybrid CMOS Detectors (HCDs) for X-Ray telescope focal planes will place them in contention with CCDs on future satellite missions due to their faster frame rates, flexible readout scenarios, lower power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels with low power, on-chip multiplexer electronics in a random access fashion. Faster frame rates achieved with multi-output readout design will allow the next generation's larger effective area telescopes to observe bright sources free of pileup. Radiation damaged lattice sites effect a single pixel instead of an entire row. Random access, multi-output readout will allow for novel readout modes such as simultaneous bright-source-fast/whole-chip-slow readout. In order for HCDs to be useful as X-Ray detectors, they must show noise and energy resolution performance similar to CCDs while retaining advantages inherent to HCDs. We will report on readnoise, conversion gain, and energy resolution measurements of an X-Ray enhanced Teledyne HAWAII-1RG (H1RG) HCD and describe techniques of H1RG data reduction.

  14. Influence of the Ca/Si ratio of the C–S–H phase on the interaction with sulfate ions and its impact on the ettringite crystallization pressure

    SciTech Connect

    Kunther, Wolfgang; Lothenbach, Barbara

    2015-03-15

    The effect of the Ca/Si ratio of the calcium–silicate–hydrate (C–S–H) phase on the interaction with sulfate ions is investigated for C–S–H phases (Ca/Si = 0.83, 1.25, 1.50) and mortar samples of blended Portland cements. It is shown that leaching of calcium from C–S–H and portlandite affects the composition of the pore solution and contributes to the developing crystallization pressure of ettringite. Sulfate profiles show that sulfate binding before cracking is similar for different Ca/Si ratios whereas the highest expansion rates are observed for the mortars with the highest Ca/Si ratios. After leaching in sulfate solutions, the C–S–H samples have been characterized by {sup 29}Si MAS NMR, thermogravimetric analysis, and elemental solution analysis. Generally, the exposure to sulfate solutions results in decalcification of the C–S–H, which increases with decreasing Ca/Si ratio. The data are in good agreement with thermodynamic modeling, indicating that equilibrium is almost achieved in the leached systems. Finally, the expansion of mortar samples exposed to sulfate solutions was much less at lower Ca/Si ratios of the cement blends. This reduced expansion can be related to the decrease of the supersaturation of the pore solution with respect to ettringite at lower Ca/Si ratios of the C–S–H and in the absence of portlandite.

  15. Formation of spherical primary silicon crystals during semi-solid processing of hypereutectic Al-15.5wt%Si alloy

    SciTech Connect

    Lee, J.I.; Lee, H.I.; Kim, M.I.

    1995-06-15

    Semi-solid state processing is considered as an attractive processing technique because of it offers several potential advantages such as energy saving for forming, reduction of microsegregation and porosity, especially for near net shape manufacturing of components. This technique is frequently applied to make sound casting products of hypoeutectic Al-Si alloys. On the other hand, hypereutectic Al-Si alloys have limited applications because of their inherent problems associated with poor machinability and mechanical properties, although the commercial potential for their outstanding resistance to wear and corrosion, higher hardness and low coefficient of thermal expansion is well recognized. To exploit the full potential of hypereutectic Al-Si alloys, semi-solid processing is utilized in an attempt to improve the mechanical properties through the spheroidization of primary Si crystals. The purpose of the present work is to provide the experimental evidence of the fragmentation of primary Si crystals in hypereutectic Al-15.5wt%Si alloy during semi-solid processing. Microstructural evolution during the isothermal shearing above the eutectic temperature of this alloy as a function of processing time is also reported.

  16. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon

    SciTech Connect

    Zanatta, A. R.; Kordesch, M. E.

    2014-08-21

    Amorphous (a-)Si-based materials always attracted attention of the scientific community, especially after their use in commercial devices like solar cells and thin film transistors in the 1980s. In addition to their technological importance, the study of a-Si-based materials also present some interesting theoretical-practical challenges. Their crystallization as induced by metal species is one example, which is expected to influence the development of electronic-photovoltaic devices. In fact, the amorphous-to-crystalline transformation of the a-SiAl system has been successfully applied to produce solar cells suggesting that further improvements can be achieved. Stimulated by these facts, this work presents a comprehensive study of the a-SiAl system. The samples, with Al contents in the ∼0−15 at. % range, were made in the form of thin films and were characterized by different spectroscopic techniques. The experimental results indicated that: (a) increasing amounts of Al changed both the atomic structure and the optical properties of the samples; (b) thermal annealing induced the crystallization of the samples at temperatures that depend on the Al concentration; and (c) the crystallization process was also influenced by the annealing duration and the structural disorder of the samples. All of these aspects were addressed in view of the existing models of the a-Si crystallization, which were also discussed to some extent. Finally, the ensemble of experimental results suggest an alternative method to produce cost-effective crystalline Si films with tunable structural-optical properties.

  17. Colors Of Liquid Crystals Used To Measure Surface Shear Stresses

    NASA Technical Reports Server (NTRS)

    Reda, D. C.; Muratore, J. J., Jr.

    1996-01-01

    Developmental method of mapping shear stresses on aerodynamic surfaces involves observation, at multiple viewing angles, of colors of liquid-crystal surface coats illuminated by white light. Report describing method referenced in "Liquid Crystals Indicate Directions Of Surface Shear Stresses" (ARC-13379). Resulting maps of surface shear stresses contain valuable data on magnitudes and directions of skin friction forces associated with surface flows; data used to refine mathematical models of aerodynamics for research and design purposes.

  18. Growth of piezoelectric water-free GeO2 and SiO2-substituted GeO2 single-crystals.

    PubMed

    Lignie, A; Armand, P; Papet, P

    2011-10-01

    Using the slow-cooling method in selected fluxes, we have grown spontaneously nucleated single-crystals of pure GeO(2) and SiO(2)-substituted GeO(2) materials with the α-quartz structure. These piezoelectric materials were obtained in millimeter size as well-faceted, visually colorless, and transparent crystals. Cubic-like or hexagonal prism-like morphology was identified depending on the chemical composition of the single-crystals and on the nature of the flux. Both the silicon substitution rate and the homogeneity of its distribution were estimated by Energy Dispersive X-ray spectroscopy. The cell parameters of the flux-grown GeO(2) and Ge(1-x)Si(x)O(2) (0.038 ≤ x ≤ 0.089) solid-solution were deduced from their X-ray powder diffraction pattern. As expected, the cell volumes decrease as the silicon content substitution increases. A room temperature Infrared spectroscopy study confirms the absence of hydroxyl groups in the as-grown crystals. Unlike what was observed for hydrothermally grown GeO(2) crystals, these flux-grown oxide materials did not present any phase transition before melting as pointed out by a Differential Scanning Calorimetry study. Neither a α-quartz/β-quartz transition as encountered in SiO(2) near 573 °C nor a α-quartz to rutile transformation were detected for these GeO(2) and Ge(1-x)Si(x)O(2) single-crystals. PMID:21875033

  19. Measurements of crystal growth kinetics at extreme deviations from equilibrium. Technical progress report, 1 September 1990--31 August 1991

    SciTech Connect

    Aziz, M.J.

    1992-07-14

    We have measured solute trapping of several solutes in Al and Ni during rapid solidification. We have also made preliminary measurements of solute trapping of As in Si, trapped 20 atomic percent As in Si, and made a preliminary measurement of the T{sub o} curve in Si-As. 5 figs.

  20. In situ measurement and dynamic control of the evaporation rate in vapor diffusion crystallization of proteins

    NASA Astrophysics Data System (ADS)

    Shu, Zhan-Yong; Gong, Hai-Yun; Bi, Ru-Chang

    1998-08-01

    A special device with a weight-sensitive facility was designed for monitoring and controlling the water evaporation in vapor diffusion protein crystallization. The device made it possible to measure the weight of the drop in real time while the crystallization experiment was going on normally. The precise water equilibration curves under different crystallization conditions could be obtained automatically. By monitoring and controlling the evaporation rate, the crystallization of hen egg-white lysozyme and trichosanthin, a plant protein from Chinese herb, was optimized by regulating the reservoir solution dynamically. The experimental results of these two proteins indicate both the feasibility of the device and the usefulness of dynamic control technique. Compared with traditional crystallization experiments, dynamically controlled crystallization can reduce the number of nuclei, increase the crystal size and save experimental time effectively.

  1. Integrated III-V Photonic CrystalSi waveguide platform with tailored optomechanical coupling

    PubMed Central

    Tsvirkun, Viktor; Surrente, Alessandro; Raineri, Fabrice; Beaudoin, Grégoire; Raj, Rama; Sagnes, Isabelle; Robert-Philip, Isabelle; Braive, Rémy

    2015-01-01

    Optomechanical systems, in which the vibrations of a mechanical resonator are coupled to an electromagnetic radiation, have permitted the investigation of a wealth of novel physical effects. To fully exploit these phenomena in realistic circuits and to achieve different functionalities on a single chip, the integration of optomechanical resonators is mandatory. Here, we propose a novel approach to heterogeneously integrate arrays of two-dimensional photonic crystal defect cavities on top of silicon-on-insulator waveguides. The optomechanical response of these devices is investigated and evidences an optomechanical coupling involving both dispersive and dissipative mechanisms. By controlling the optical coupling between the waveguide and the photonic crystal, we were able to vary and understand the relative strength of these couplings. This scalable platform allows for an unprecedented control on the optomechanical coupling mechanisms, with a potential benefit in cooling experiments, and for the development of multi-element optomechanical circuits in the framework of optomechanically-driven signal-processing applications. PMID:26567535

  2. Crystal chemistry and optical investigations of the Cu{sub 2}Zn(Sn,Si)S{sub 4} series for photovoltaic applications

    SciTech Connect

    Hamdi, Mohamed; Lafond, Alain; Guillot-Deudon, Catherine; Hlel, Faouzi; Gargouri, Mohamed; Jobic, Stéphane

    2014-12-15

    Different compounds in the Cu{sub 2}ZnSnS{sub 4}–Cu{sub 2}ZnSiS{sub 4} system have been prepared via ceramic route and structurally characterized via X-ray diffraction on powders and single crystals. Two solid solutions were identified along the Cu{sub 2}Zn(Sn,Si)S{sub 4} series. Namely, materials with Si-content x=Si/(Sn+Si) lower than 0.5 crystallize with the Cu{sub 2}ZnSnS{sub 4} kesterite structure type while materials with x higher than 0.8 adopt the Cu{sub 2}ZnSiS{sub 4} enargite structure type. In between, a miscibility gap occurs where the Cu{sub 2}ZnSn{sub 0.5}Si{sub 0.5}S{sub 4} and Cu{sub 2}ZnSn{sub 0.2}Si{sub 0.8}S{sub 4} compounds co-exist. The optical bandgap increases continuously with the Si content in the whole series. This opens up the possibility to fine tune the absorption threshold and to adjust it to 1.7 eV for x∼0.5, the optimum value for the top cell of tandem solar devises to achieve high photovoltaic conversion efficiency. - Graphical abstract: Two solid solutions have been pointed out in the Cu{sub 2}Zn(Sn{sub 1−x}Si{sub x})S{sub 4} series with the kesterite and the enargite type structures. - Highlights: • New compounds in Cu{sub 2}Zn(Sn,Si)S{sub 4} series have been prepared. • Two solid solutions Cu{sub 2}ZnSn{sub 1−x}Si{sub x}S{sub 4} were identified for x≤0.5 and x≥0.8. • In the miscibility gap 2 phases co-exist with kesterite and enargite structure types. • The optical bandgap increases continuously with the Si-content in the whole series. • These materials could be envisioned as absorber in thin-film solar cells.

  3. Growth rate measurements of lysozyme crystals under microgravity conditions by laser interferometry.

    PubMed

    Yoshizaki, Izumi; Tsukamoto, Katsuo; Yamazaki, Tomoya; Murayama, Kenta; Oshi, Kentaro; Fukuyama, Seijiro; Shimaoka, Taro; Suzuki, Yoshihisa; Tachibana, Masaru

    2013-10-01

    The growth rate vs. supersaturation of a lysozyme crystal was successfully measured in situ together with the crystal surface observation and the concentration measurements onboard the International Space Station. A Michelson-type interferometer and a Mach-Zehnder interferometer were, respectively, employed for real-time growth rate measurements and concentration field measurements. The hardware development, sample preparation, operation, and analysis methods are described.

  4. Measuring parameters of large-aperture crystals used for generating optical harmonics

    SciTech Connect

    English, R. E.; Hibbard, R. L.; Michie, R. B.; Wegner, P. J.; Auerbach, J. M.; Norton, M. A.; Summers, M. D.; Perfect, S. A.

    1999-02-23

    The purpose of this project was to develop tools for understanding the influence of crystal quality and crystal mounting on harmonic-generation efficiency at high irradiance. Measuring the homogeneity of crystals interferometrically, making detailed physics calculations of conversion efficiency, performing finite- element modeling of mounted crystals, and designing a new optical metrology tool were key elements in obtaining that understanding. For this work, we used the following frequency-tripling scheme: type I second- harmonic generation followed by type II sum-frequency mixing of the residual fundamental and the second harmonic light. The doubler was potassium dihydrogen phosphate (KDP), and the tripler was deuterated KDP (KD*P). With this scheme, near-infrared light (1053 nm) can be frequency tripled (to 351 nm) at high efficiency (theoretically >90%) for high irradiance (>3 GW/cm²). Spatial variations in the birefringence of the large crystals studied here (37 to 41 cm square by about 1 cm thick) imply that the ideal phase-matching orientation of the crystal with respect to the incident laser beam varies across the crystal. We have shown that phase-measuring interferometry can be used to measure these spatial variations. We observed transmitted wavefront differences between orthogonally polarized interferograms of {lambda}/50 to {lambda}/100, which correspond to index variations of order 10-6. On some plates that we measured, the standard deviation of angular errors is 22-23 µrad; this corresponds to a 1% reduction in efficiency. Because these conversion crystals are relatively thin, their surfaces are not flat (deviate by k2.5 urn from flat). A crystal is mounted against a precision-machined surface that supports the crystal on four edges. This mounting surface is not flat either (deviates by +2.5 µm from flat). A retaining flange presses a compliant element against the crystal. The load thus applied near the edges of the crystal surface holds

  5. A SiPM-based isotropic-3D PET detector X'tal cube with a three-dimensional array of 1 mm3 crystals

    NASA Astrophysics Data System (ADS)

    Yamaya, Taiga; Mitsuhashi, Takayuki; Matsumoto, Takahiro; Inadama, Naoko; Nishikido, Fumihiko; Yoshida, Eiji; Murayama, Hideo; Kawai, Hideyuki; Suga, Mikio; Watanabe, Mitsuo

    2011-11-01

    We are developing a novel, general purpose isotropic-3D PET detector X'tal cube which has high spatial resolution in all three dimensions. The research challenge for this detector is implementing effective detection of scintillation photons by covering six faces of a segmented crystal block with silicon photomultipliers (SiPMs). In this paper, we developed the second prototype of the X'tal cube for a proof-of-concept. We aimed at realizing an ultimate detector with 1.0 mm3 cubic crystals, in contrast to our previous development using 3.0 mm3 cubic crystals. The crystal block was composed of a 16 × 16 × 16 array of lutetium gadolinium oxyorthosilicate (LGSO) crystals 0.993 × 0.993 × 0.993 mm3 in size. The crystals were optically glued together without inserting any reflector inside and 96 multi-pixel photon counters (MPPCs, S10931-50P, i.e. six faces each with a 4 × 4 array of MPPCs), each having a sensitive area of 3.0 × 3.0 mm2, were optically coupled to the surfaces of the crystal block. Almost all 4096 crystals were identified through Anger-type calculation due to the finely adjusted reflector sheets inserted between the crystal block and light guides. The reflector sheets, which formed a belt of 0.5 mm width, were placed to cover half of the crystals of the second rows from the edges in order to improve identification performance of the crystals near the edges. Energy resolution of 12.7% was obtained at 511 keV with almost uniform light output for all crystal segments thanks to the effective detection of the scintillation photons.

  6. In situ Ultrasonic Velocity Measurements Across the Olivine-spinel Transformation in Fe2Si04

    SciTech Connect

    Liu, Q.; Liu, W; Whitaker, M; Wang, L; Li, B

    2010-01-01

    Compressional (P) and shear (S) wave velocities across the olivine-spinel transformation in Fe{sub 2}SiO{sub 4} were investigated in situ using combined synchrotron X-ray diffraction, X-ray imaging, and ultrasonic interferometry up to 5.5 GPa along the 1173 K isotherm. The onset of the spinel to olivine transformation at 4.5 GPa and olivine to spinel transition for Fe{sub 2}SiO{sub 4} at 4.8 GPa was concurrently observed from X-ray diffraction, the amplitude of the ultrasonic signals, the calculated velocities, and the ratio of P and S wave velocities (v{sub P}/v{sub S}). No velocity softening was observed prior to the fayalite to spinel transition. The velocity contrasts across the Fe{sub 2}SiO{sub 4} spinel to fayalite phase transition are derived directly from the measured velocities, which are 13 and 12% for P and S waves, respectively, together with a density contrast of 9.4%. A comparison with literature data indicates that the changes in compressional-wave velocity and density across the olivine-spinel transformation in Fe{sub 2}SiO{sub 4} are comparable to those with different iron concentrations in the (Mg,Fe){sub 2}SiO{sub 4} solid solution, whereas the shear wave velocity contrast decreases slightly with increasing iron concentration.

  7. Integrated X-Ray Reflectivity Measurements for Elliptically Curved PET Crystals

    SciTech Connect

    Haugh, M J; Ross, P W; Regan, P W; Magoon, J; Shoup, M J; Barrios, M A; Emig, J A; Fournier, K B

    2012-04-26

    Spectroscopy provides valuable information about the temperature and density of a compressed pellet in a plasma. Elliptically curved pentaerythritol (PET) crystals are used as components for spectrometers. Their elliptical geometry gives several advantages related to spectral energy range, source focus, and spectral image compression.[1] The crystal curvature increases the spectrometer throughput but at the cost of a loss in resolution. Four different crystals are used in a spectrometer at the National Ignition Facility (NIF) target chamber at Lawrence Livermore National Laboratory (LLNL). Figure 1 shows the arrangement of the elliptical PET crystals in the snout of a NIF target diagnostic shown in Figure 2. The spectrum from the crystals is captured by four image plates located behind the crystals. A typical mandrel, the darkened section, upon which the PET crystal is glued, is shown in Figure 3, which also shows the complete ellipse. There are four elliptical segment types, each having the same major axis but a different minor axis. The crystals are 150 mm long in the diffraction direction and 25.4 mm high. Two crystals of each type were calibrated. The throughput for each spectrometer is determined by the integrated reflectivity of the PET crystal.[1] The goal of this effort was to measure the reflectivity curve of the PET curved crystal at several energies and determine the integrated reflectivity and the curve width as a function of the X-ray spectral energy and location on the ellipse where the beam strikes.

  8. Crystal chemistry of the G-phases in the {l_brace}Ti, Zr, Hf{r_brace}-Ni-Si systems

    SciTech Connect

    Grytsiv, A.; Chen Xingqiu; Rogl, P. Podloucky, R.; Schmidt, H.; Giester, G.; Pomjakushin, V.

    2007-02-15

    Ternary compounds M{sub 6}Ni{sub 16}Si{sub 7} (M=Ti, Zr, Hf) have been investigated by X-ray powder/single crystal and neutron powder diffraction. Compounds with Zr and Hf crystallize in the ordered Th{sub 6}Mn{sub 23} type (Mg{sub 6}Cu{sub 16}Si{sub 7}-type, space group Fm3-bar m), whereas Ti{sub 6}Ni{sub 16.7}Si{sub 7} contains an additional Ni atom partially occupying the 24e site (M2 site, x=0.4637,0,0; occ.=0.119) inside a Ti octahedron; Ti atoms occupy a split position. Ti{sub 6}Ni{sub 16.7}Si{sub 7} represents a new variant of the filled Th{sub 6}Mn{sub 23} type structure. Ab initio calculations confirm the structural difference: additional Ni atoms favour the 24e site for Ti{sub 6}Ni{sub 16.7}Si{sub 7}, however, for the Zr and Hf-based compounds the unoccupied site renders an energetically lower ground state. Enthalpies of formation of Ti{sub 6}Ni{sub 17}Si{sub 7}, Zr{sub 6}Ni{sub 16}Si{sub 7}, and Hf{sub 6}Ni{sub 16}Si{sub 7} were calculated to be -68.65, -74.78, and -78.59kJ/(mol of atoms), respectively.

  9. Fractured toughness of Si3N4 measured with short bar chevron-notched specimens

    NASA Technical Reports Server (NTRS)

    Salem, J. A.; Shannon, J. L., Jr.

    1985-01-01

    The short bar chevron-notched specimen is used to measure the plane strain fracture toughness of hot pressed Si3N4. Specimen proportions and chevron-notch angle are varied, thereby varying the amount of crack extension to maximum load (upon which K sub IC is based). The measured toughness (4.68 + or - 0.19 MNm to the 3/2 power) is independent of these variations, inferring that the material has a flat crack growth resistance curve.

  10. Coherent radiation from 70 GeV and 150 GeV electrons and positrons traversing diamond and Si crystals near axial and planar directions

    NASA Astrophysics Data System (ADS)

    Medenwaldt, R.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Elsener, K.; Sona, P.; Connell, S. H.; Sellschop, J. P. F.; Avakian, R. O.; Avetisian, A. E.; Taroian, S. P.

    1995-10-01

    Channeling radiation and energy loss for 150 GeV electrons and positrons incident on a 0.5 mm thick <100> diamond and a 0.6 mm thick <110> Si crystal have been measured — near axial and planar directions. It is found that yields from well channeled electrons are enhanced by a factor of two, and those for positrons are reduced by a factor of five, as compared to yields outside the channeling region. The experimental critical angle for channeling agrees very well with the Lindhard angle ψ1. For incidence along planes and close to axial directions, the overall picture of the radiation spectra for electrons and positrons is the same for the high-energy photons, where a strongly enhanced peak is found, as was first discovered in an earlier electron experiment. In diamond, the standard coherent bremsstrahlung has been measured close to the 110 planes but for 10 mrad and 50 mrad from the axis. These experimental results agree well with calculations using the Born approximation.

  11. Crystal structure of apatite type Ca2.49Nd7.51(SiO4)6O1.75.

    PubMed

    Le, Thu Hoai; Brooks, Neil R; Binnemans, Koen; Blanpain, Bart; Guo, Muxing; Van Meervelt, Luc

    2016-02-01

    The title compound, Ca2+x Nd8-x (SiO4)6O2-0.5x (x = 0.49), was synthesized at 1873 K and rapidly quenched to room temperature. Its structure has been determined using single-crystal X-ray diffraction and compared with results reported using neutron and X-ray powder diffraction from samples prepared by slow cooling. The single-crystal structure from room temperature data was found to belong to the space group P63/m and has the composition Ca2.49Nd7.51(SiO4)6O1.75 [dicalcium octa-neodymium hexa-kis-(ortho-silicate) dioxide], being isotypic with natural apatite and the previously reported Ca2Nd8(SiO4)6O2 and Ca2.2Nd7.8(SiO4)6O1.9. The solubility limit of calcium in the equilibrium state at 1873 K was found to occur at a composition of Ca2+x Nd8-x (SiO4)6O2-0.5x , where x = 0.49. PMID:26958389

  12. Crystal structure of apatite type Ca2.49Nd7.51(SiO4)6O1.75

    PubMed Central

    Le, Thu Hoai; Brooks, Neil R.; Binnemans, Koen; Blanpain, Bart; Guo, Muxing; Van Meervelt, Luc

    2016-01-01

    The title compound, Ca2+xNd8–x(SiO4)6O2–0.5x (x = 0.49), was synthesized at 1873 K and rapidly quenched to room temperature. Its structure has been determined using single-crystal X-ray diffraction and compared with results reported using neutron and X-ray powder diffraction from samples prepared by slow cooling. The single-crystal structure from room temperature data was found to belong to the space group P63/m and has the composition Ca2.49Nd7.51(SiO4)6O1.75 [dicalcium octa­neodymium hexa­kis­(ortho­silicate) dioxide], being isotypic with natural apatite and the previously reported Ca2Nd8(SiO4)6O2 and Ca2.2Nd7.8(SiO4)6O1.9. The solubility limit of calcium in the equilibrium state at 1873 K was found to occur at a composition of Ca2+xNd8–x(SiO4)6O2–0.5x, where x = 0.49. PMID:26958389

  13. Film-Cooling Heat-Transfer Measurements Using Liquid Crystals

    NASA Technical Reports Server (NTRS)

    Hippensteele, Steven A.

    1997-01-01

    The following topics are discussed: (1) The Transient Liquid-Crystal Heat-Transfer Technique; (2) 2-D Film-Cooling Heat-Transfer on an AlliedSignal Vane; and (3) Effects of Tab Vortex Generators on Surface Heat Transfer. Downstream of a Jet in Crossflow.

  14. Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy

    NASA Astrophysics Data System (ADS)

    Viswanathan, E.; Murugaraj, R.; Selvakumar, S.; Kanjilal, D.; Sivaji, K.

    2011-07-01

    In the present work, low temperature impedance measurements were made on the pristine and Ag12+ ions irradiated 6H-SiC samples. The conductivity properties were studied at low temperature. The activation energies were calculated from the Arrhenius plot of d.c conductivity and impedance relaxation time. The activation energy was comparatively higher for the irradiated samples and found to be electronic conduction. From the study we observe the lower conductivity values exhibited for 300 K irradiated sample due to severe damage than the 80 K irradiated sample. The damage production mechanism and the change in electrical properties are discussed.

  15. In Situ Study of the Formation of Silicide Phases in Amorphous Co–Si Mixed Layers

    SciTech Connect

    Van Bockstael, C.; De Keyser, K; Demeulemeester, J; Vantomme, A; Van Meirhaeghe, R; Detavernier, C; Jordan-Sweet, J; Lavoie, C

    2010-01-01

    We investigate Co silicide phase formation when extra Si is added within an as deposited 50 nm Co film. The addition of Si is investigated for both the Co/SiO{sub 2} and Co/Si(1 0 0) system. A series of 10 Co-Si mixed films with a Si content varying from 21 to 59 at.% was prepared and investigated during annealing with in situ X-ray diffraction. The oxide system is used as reference system to identify phases that initially crystallize in an amorphous mixture of a given composition. Multiple phases can nucleate, and the temperature of crystallization depends on the Co-Si atomic ratio. Upon heating of the Co(Si)/Si system, the first reaction is a similar crystallization reaction of the Co(Si) mixture. Once the first phase is formed, one has the normal system of a silicide phase in contact with an unlimited amount of Si from the substrate, and the sequential phase formation towards CoSi{sub 2} is established. For deposited layers of composition ranging from 48%Si to 52%Si, the CoSi is the first phase to form and increasing the amount of Si leads to a remarkable improvement of the thermal stability of CoSi on Si(1 0 0). CoSi{sub 2} nucleation was extensively delayed by 150 C compared to the reaction observed from a pure Co film on Si(1 0 0). Electron backscatter diffraction measurements reveal that in this range, the gradual Si increase systematically leads to bigger CoSi grains (up to 20 {micro}m). This shows that the grain size of the CoSi precursor strongly affects the nucleation of the following CoSi{sub 2} phase. Laser-light scattering measurements suggest that adding more than 42%Si reduces the roughness of the CoSi{sub 2} layer.

  16. Laser cladding of quasi-crystal-forming Al-Cu-Fe-Bi on an Al-Si alloy substrate

    NASA Astrophysics Data System (ADS)

    Biswas, Krishanu; Chattopadhyay, Kamanio; Galun, Rolf; Mordike, Barry L.

    2005-07-01

    We report here the results of an investigation aimed at producing coatings containing phases closely related to the quasi-crystalline phase with dispersions of soft Bi particles using an Al-Cu-Fe-Bi elemental powder mixture on Al-10.5 at. pct Si substrates. A two-step process of cladding followed by remelting is used to fine-tune the alloying, phase distribution, and microstructure. A powder mix of Al64Cu22.3Fe11.7Bi2 has been used to form the clads. The basic reason for choosing Bi lies in the fact that it is immiscible with each of the constituent elements. Therefore, it is expected that Bi will solidify in the form of dispersoids during the rapid solidification. A detailed microstructural analysis has been carried out by using the backscattered imaging mode in a scanning electron microscope (SEM) and transmission electron microscope (TEM). The microstructural features are described in terms of layers of different phases. Contrary to our expectation, the quasi-crystalline phase could not form on the Al-Si substrate. The bottom of the clad and remelted layers shows the regrowth of aluminum. The formation of phases such as blocky hexagonal Al-Fe-Si and a ternary eutectic (Al + CuAl2 + Si) have been found in this layer. The middle layer shows the formation of long plate-shaped Al13Fe4 along with hexagonal Al-Fe-Si phase growing at the periphery of the former. The formation of metastable Al-Al6Fe eutectic has also been found in this layer. The top layer, in the case of the as-clad track, shows the presence of plate-shaped Al13Fe4 along with a 1/1 cubic rational approximant of a quasi-crystal. The top layer of the remelted track shows the presence of a significant amount of a 1/1 cubic rational approximant. In addition, the as-clad and remelted microstructures show a fine-scale dispersion of Bi particles of different sizes formed during monotectic solidification. The remelting is found to have a strong effect on the size and distribution of Bi particles. The dry

  17. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  18. Measurement of pair-production by high energy photons in an aligned tungsten crystal

    NASA Astrophysics Data System (ADS)

    Moore, R.; Parker, M. A.; Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Doble, N.; Elsener, K.; Ballestrero, S.; Sona, P.; Strakhovenko, V. M.; Biino, C.; Vilakazi, Z. Z.

    1996-10-01

    A new measurement has been made of the rate of pair-production in a 3.2 mm thick tungsten crystal, exposed to photons with energies in the range 10 to 150 GeV, for angles of incidence up to 10 mrad from the crystal axis. A strong enhancement of the pair-production rate is observed when the beam is aligned along the <100> crystal axis, as compared to a random orientation. This effect can be exploited in the NA48 CP-violation experiment by using a thin crystal rather than an amorphous material to convert photons, thus minimising the scattering of kaons in the converter.

  19. Experimental and Metrological Basis for SI-Traceable Infrared Radiance Measurements From Space

    NASA Astrophysics Data System (ADS)

    Gero, P. J.; Dykema, J. A.; Anderson, J. G.; Leroy, S. S.

    2007-12-01

    In order to establish a climate benchmark record and to be useful in interdecadal climate forecast testing, satellite measurements of high spectral resolution infrared radiance must have uncertainty estimates that can be proven beyond a doubt. An uncertainty in radiance of about 1 part in 1000 is required for climate applications. This can be accomplished by appealing to the best measurement practices of the metrology community. The International System of Units (SI) are linked to fundamental physical properties of matter, and can be realized anywhere in the world without bias. By doing so, one can make an accurate observation to within a specified uncertainty. Achieving SI-traceable radiance measurements from space is a novel requirement, and requires specialized sensor design and a disciplined experimental approach. Infrared remote sensing satellite instruments typically employ blackbody calibration targets, which are tied to the SI through Planck's law and the definition of the Kelvin. The blackbody temperature and emissivity, however, must be determined accurately on- orbit, in order for the blackbody emission scale to be SI-traceable. We outline a methodology of instrument design, pre-flight calibration and on-orbit diagnostics for realizing SI- traceable infrared radiance measurements. This instrument is intended as a component of the Climate Absolute Radiance and Refractivity Earth Observatory (CLARREO), a high priority recommendation of the National Research Council decadal survey. Calibration blackbodies for remote sensing differ from a perfect Planckian blackbody; thus the component uncertainties must be evaluated in order to confer traceability. We have performed traceability experiments in the laboratory to verify blackbody temperature, emissivity and the end-to-end radiance scale. We discuss the design of the Harvard standard blackbody and an intercomparison campaign that will be conducted with the GIFTS blackbody (University of Wisconsin, Madison) and

  20. The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

    SciTech Connect

    Savchenko, D. V.

    2015-01-28

    The magnetic and electronic properties of heavily doped n-type 6H SiC samples with a nitrogen concentration of 10{sup 19} and 4 × 10{sup 19 }cm{sup −3} were studied with electron spin resonance (ESR) at 5–150 K. The observed ESR line with a Dysonian lineshape was attributed to the conduction electrons (CE). The CE ESR (CESR) line was fitted by Lorentzian (insulating phase) (T < 40 K) and by Dysonian lineshape (metallic phase) above 40 K, demonstrating that Mott insulator-metal (IM) transition takes place at ∼40 K, accompanied by significant change in the microwave conductivity. The temperature dependence of CESR linewidth follows the linear Korringa law below 40 K, caused by the coupling of the localized electrons (LE) and CE, and is described by the exponential law above 40 K related to the direct relaxation of the LE magnetic moments via excited levels driven by the exchange interaction of LE with CE. The g-factor of the CESR line (g{sub ‖} = 2.0047(3), g{sub ⊥} = 2.0034(3)) is governed by the coupling of the LE of nitrogen donors at hexagonal and quasi-cubic sites with the CE. The sharp drop in CESR line intensity (25–30 K) was explained by the formation of antiferromagnetic ordering in the spin system close to the IM transition. The second broad ESR line overlapped with CESR signal (5–25 K) was attributed to the exchange line caused by the hopping motion of electrons between occupied and non-occupied positions of the nitrogen donors. Two mechanisms of conduction, hopping and band conduction, were distinguished in the range of T = 10–25 K and T > 50 K, respectively.

  1. Magnetic structures of β{sub I}-Li{sub 2}CoSiO{sub 4} and γ{sub 0}-Li{sub 2}MnSiO{sub 4}: Crystal structure type vs. magnetic topology

    SciTech Connect

    Avdeev, Maxim; Mohamed, Zakiah; Ling, Chris D.

    2014-08-15

    The magnetic structure and properties of the candidate lithium-ion battery cathode materials Pbn2{sub 1}(≡Pna2{sub 1}) Li{sub 2}CoSiO{sub 4} and P2{sub 1}/n Li{sub 2}MnSiO{sub 4} have been studied experimentally using low-temperature neutron powder diffraction and magnetometry. Both materials undergo long-range antiferromagnetic ordering, at 14 K and 12 K respectively, due to super–super-exchange mediated by bridging silicate groups. Despite having different crystal structures (wurtzite- vs. “dipolar”-type), Li{sub 2}CoSiO{sub 4} and Li{sub 2}MnSiO{sub 4} have the same topology in terms of magnetic interactions, and adopt collinear magnetic structures of the same type with the propagation vectors (0, 1/2, 1/2) and (1/2, 0, 1/2), respectively. The magnetic moments in the two materials are aligned in parallel and obliquely to the distorted closed-packed layers of oxygen atoms. The experimentally observed values of the ordered magnetic moments, 2.9 μ{sub B} and 4.6 μ{sub B}, are close to those expected for d{sup 7} Co{sup 2+} and d{sup 5} Mn{sup 2+}, respectively. - Graphical abstract: Despite the different crystal structures β{sub I}-Li{sub 2}CoSiO{sub 4} and γ{sub 0}-Li{sub 2}MnSiO{sub 4} have similar magnetic topology and as a result adopt magnetic structure of the same type. - Highlights: • Magnetic structures of Li{sub 2}CoSiO{sub 4} and Li{sub 2}MnSiO{sub 4} were studied for the first time. • Both materials antiferromagnetically order around 12–14 K. • Despite different crystal structure magnetic structures are of the same type. • The fact is attributed to similar topology of magnetic interactions.

  2. Measurement and models of bent KAP(001) crystal integrated reflectivity and resolution (invited)

    NASA Astrophysics Data System (ADS)

    Loisel, G. P.; Wu, M.; Stolte, W.; Kruschwitz, C.; Lake, P.; Dunham, G. S.; Bailey, J. E.; Rochau, G. A.

    2016-11-01

    The Advanced Light Source beamline-9.3.1 x-rays are used to calibrate the rocking curve of bent potassium acid phthalate (KAP) crystals in the 2.3-4.5 keV photon-energy range. Crystals are bent on a cylindrically convex substrate with a radius of curvature ranging from 2 to 9 in. and also including the flat case to observe the effect of bending on the KAP spectrometric properties. As the bending radius increases, the crystal reflectivity converges to the mosaic crystal response. The X-ray Oriented Programs (xop) multi-lamellar model of bent crystals is used to model the rocking curve of these crystals and the calibration data confirm that a single model is adequate to reproduce simultaneously all measured integrated reflectivities and rocking-curve FWHM for multiple radii of curvature in both 1st and 2nd order of diffraction.

  3. EPR and spin-lattice relaxation of rare-earth activated centres in Y 2SiO 5 single crystals

    NASA Astrophysics Data System (ADS)

    Kurkin, I. N.; Chernov, K. P.

    1980-08-01

    An investigation of the EPR spectra and spin-lattice relaxation of Ce 3+, Nd 3+ and Yb 3+ ions in Y 2SiO 5 single crystals has been carried out. Two different EPR spectra for each rare-earth ion are observed due to a substitution of Y 1 and Y 2 sites crytals. Spin-lattice relaxation times for both activated centres are shown to be essentially different, although static crystal field of Y 1 and Y 2 sites differ slightly.

  4. Direct measurements of irradiation-induced creep in micropillars of amorphous Cu56Ti38Ag6, Zr52Ni48, Si, and SiO2

    NASA Astrophysics Data System (ADS)

    Özerinç, Sezer; Kim, Hoe Joon; Averback, Robert S.; King, William P.

    2015-01-01

    We report in situ measurements of irradiation-induced creep on amorphous (a-) Cu56Ti38Ag6, Zr52Ni48, Si, and SiO2. Micropillars 1 μm in diameter and 2 μm in height were irradiated with ˜2 MeV heavy ions during uniaxial compression at room temperature. The creep measurements were performed using a custom mechanical testing apparatus utilizing a nanopositioner, a silicon beam transducer, and an interferometric laser displacement sensor. We observed Newtonian flow in all tested materials. For a-Cu56Ti38Ag6, a-Zr52Ni48, a-Si, and Kr+ irradiated a-SiO2 irradiation-induced fluidities were found to be nearly the same, ≈3 GPa-1 dpa-1, whereas for Ne+ irradiated a-SiO2 the fluidity was much higher, 83 GPa-1 dpa-1. A fluidity of 3 GPa-1 dpa-1 can be explained by point-defect mediated plastic flow induced by nuclear collisions. The fluidity of a-SiO2 can also be explained by this model when nuclear stopping dominates the energy loss, but when the electronic stopping exceeds 1 keV/nm, stress relaxation in thermal spikes also contributes to the fluidity.

  5. Real-time measurements of crystallization processes in viscoelastic polymeric photonic crystals

    NASA Astrophysics Data System (ADS)

    Snoswell, David R. E.; Finlayson, Chris E.; Zhao, Qibin; Baumberg, Jeremy J.

    2015-11-01

    We present a study of the dynamic shear ordering of viscoelastic photonic crystals, based on core-shell polymeric composite particles. Using an adapted shear-cell arrangement, the crystalline ordering of the material under conditions of oscillatory shear is interrogated in real time, through both video imaging and from the optical transmission spectra of the cell. In order to gain a deeper understanding of the macroscopic influences of shear on the crystallization process in this solvent-free system, the development of bulk ordering is studied as a function of the key parameters including duty cycle and shear-strain magnitude. In particular, optimal ordering is observed from a prerandomized sample at shear strains of around 160%, for 1-Hz oscillations. This ordering reaches completion over time scales of order 10 s. These observations suggest significant local strains are needed to drive nanoparticles through energy barriers, and that local creep is needed to break temporal symmetry in such high-viscosity nanoassemblies. Crystal shear-melting effects are also characterized under conditions of constant shear rate. These quantitative experiments aim to stimulate the development of theoretical models which can deal with the strong local particle interactions in this system.

  6. Coherent infrared emission from myoglobin crystals: an electric field measurement.

    PubMed

    Groot, Marie-Louise; Vos, Marten H; Schlichting, Ilme; van Mourik, Frank; Joffre, Manuel; Lambry, Jean-Christophe; Martin, Jean-Louis

    2002-02-01

    We introduce coherent infrared emission interferometry as a chi(2) vibrational spectroscopy technique and apply it to studying the initial dynamics upon photoactivation of myoglobin (Mb). By impulsive excitation (using 11-fs pulses) of a Mb crystal, vibrations that couple to the optical excitation are set in motion coherently. Because of the order in the crystal lattice the coherent oscillations of the different proteins in the crystal that are associated with charge motions give rise to a macroscopic burst of directional multi-teraHertz radiation. This radiation can be detected in a phase-sensitive way by heterodyning with a broad-band reference field. In this way both amplitude and phase of the different vibrations can be obtained. We detected radiation in the 1,000-1,500 cm(-1) frequency region, which contains modes sensitive to the structure of the heme macrocycle, as well as peripheral protein modes. Both in carbonmonoxy-Mb and aquomet-Mb we observed emission from six modes, which were assigned to heme vibrations. The phase factors of the modes contributing to the protein electric field show a remarkable consistency, taking on values that indicate that the dipoles are created "emitting" at t = 0, as one would expect for impulsively activated modes. The few deviations from this behavior in Mb-CO we propose are the result of these modes being sensitive to the photodissociation process and severely disrupted by it.

  7. Using Minority Carrier Lifetime Measurement to Determine Saw Damage Characteristics on Si Wafer Surfaces

    SciTech Connect

    Sopori, Bhushan; Devayajanam, Srinivas; Basnyat, Prakash

    2015-06-14

    The damage on the Si wafer surfaces, caused by ingot cutting, is determined from measurement of minority carrier lifetime (..tau..eff). Samples are sequentially etched to remove thin layers from each surface and lifetime is measured after each etch step. The thickness-removed at which the lifetime reaches a peak value corresponds to the damage depth. This technique also allows the depth distribution of the damage to be quantified in terms of surface recombination velocity (SRV). An accurate measurement of ..tau..eff requires corrections to optical reflection, and transmission to account for changes in the surface morphology and in the wafer thickness.

  8. A study on dual readout crystal calorimeter for hadron and jet energy measurement at a future lepton collider

    SciTech Connect

    Yeh, G.P.; /Fermilab

    2010-01-01

    Studies of requirements and specifications of crystals are necessary to develop a new generation of crystals for dual readout crystal hadron or total absorption calorimeter. This is a short and basic study of the characteristics and hadron energy measurement of PbWO4 and BGO crystals for scintillation and Cerenkov Dual Readout hadron calorimeter.

  9. Measurement of the decay rate of the SiH feature as a function of temperature

    NASA Technical Reports Server (NTRS)

    Nuth, Joseph A., III; Kraus, George F.

    1994-01-01

    We have previously suggested that the SiH fundamental stretch could serve as a diagnostic indicator of the oxidation state of silicate surfaces exposed to the solar wind for prolonged periods. We have now measured the primary decay rate of SiH in vacuo as a function of temperature and find that the primary rate constant for the decay can be characterized by the following equation: k(min(exp -1)) approximately equals 0.186 exp(-9/RT) min(exp -1), where R = 2 x 10(exp -3) kcal deg(exp -1) mole(exp -1). This means that the half-life for the decay of the SiH feature at room temperature is approximately 20 yrs, whereas the half-life at a peak lunar regolith temperature of approximately 500K would be only approximately 20 days. At the somewhat lower temperature of approximately 400K the half-life for the decay is on the order of 200 days. The rate of loss of SiH as a function of temperature provides an upper limit to the quantity of H implanted by the solar wind which can be retained by a silicate grain in a planetary regolith. This will be discussed in more detail here.

  10. Room temperature differential conductance measurements of triethylamine molecules adsorbed on Si(001).

    PubMed

    Naitabdi, Ahmed; Rochet, François; Carniato, Stéphane; Bournel, Fabrice; Gallet, Jean-Jacques

    2016-08-17

    We have measured the differential conductance of the triethylamine molecule (N(CH2CH3)3) adsorbed on Si(001)-2 × 1 at room temperature using scanning tunneling spectroscopy. Triethylamine can be engaged in a dative bonding with a silicon dimer, forming a Si-Si-N(CH2CH3)3 unit. We have examined the datively bonded adduct, either as an isolated molecule, or within an ordered molecular domain (reconstructed 4 × 2). The differential conductance curves, supported by DFT calculations, show that in the explored energy window (±2.5 near the Fermi level) the main features stem from the uncapped dangling bonds of the reacted dimer and of the adjacent unreacted ones that are electronically coupled The formation of a molecular domain, in which one dimer in two is left unreacted, is reflected in a shift of the up dimer atom occupied level away from the Fermi level, likely due to an increased π-bonding strength. In stark contrast with the preceding, pairs of dissociated molecule (a minority species) are electronically decoupled from the dimer dangling bond states. DFT calculation show that the lone-pair of the Si-N(CH2CH3)2 is a shallow level, that is clearly seen in the differential conductance curve. PMID:27499070

  11. Density Measurements of Low Silica CaO-SiO2-Al2O3 Slags

    NASA Astrophysics Data System (ADS)

    Muhmood, Luckman; Seetharaman, Seshadri

    2010-08-01

    Density measurements of a low-silica CaO-SiO2-Al2O3 system were carried out using the Archimedes principle. A Pt 30 pct Rh bob and wire arrangement was used for this purpose. The results obtained were in good agreement with those obtained from the model developed in the current group as well as with other results reported earlier. The density for the CaO-SiO2 and the CaO-Al2O3 binary slag systems also was estimated from the ternary values. The extrapolation of density values for high-silica systems also showed good agreement with previous works. An estimation for the density value of CaO was made from the current experimental data. The density decrease at high temperatures was interpreted based on the silicate structure. As the mole percent of SiO2 was below the 33 pct required for the orthosilicate composition, discrete {text{SiO}}4^{4 - } tetrahedral units in the silicate melt would exist along with O2- ions. The change in melt expansivity may be attributed to the ionic expansions in the order of {text{Al}}^{ 3+ } - {text{O}}^{ 2- } < {text{Ca}}^{ 2+ } - {text{O}}^{ 2- } < {text{Ca}}^{ 2+ } - {text{O}}^{ - } Structural changes in the ternary slag also could be correlated to a drastic change in the value of enthalpy of mixing.

  12. A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV

    NASA Astrophysics Data System (ADS)

    Kokkoris, M.; Perdikakis, G.; Kossionides, S.; Petrović, S.; Vlastou, R.; Grötzschel, R.

    2004-06-01

    In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range Ep=400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and α, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and xc, which represent characteristic dechanneling rate and range, respectively, is examined, and the results are compared to the ones obtained in the past, concerning the same polytype structures, based on the assumption that the dechanneling of protons follows an exponential law, for the energy range Ep=1.7-2.4 MeV.

  13. Antiferromagnetism in CaAl2Si2-type CaMn2As2 and SrMn2As2 single crystals

    NASA Astrophysics Data System (ADS)

    Sangeetha, N. S.; Pandey, Abhishek; Benson, Zackery A.; Johnston, D. C.

    Magnetic susceptibility versus temperature χ (T) measurements of CaMn2As2 and SrMn2As2 crystals show clear antiferromagnetic (AFM) transitions at TN ~ 65 K and 120 K,1 respectively. The anisotropic behaviors in χ (T <=TN) suggest that both compounds are noncollinear antiferromagnets which may result either from an intrinsic noncollinear structure or from multiple collinear AFM domains that are not aligned collinearly.2 The χ (T) data at T >TN reveal that both compounds exhibit strong short-range AFM ordering, evidently associated with quasi-two-dimensional spin lattices. The electrical resistivities show insulating ground states with activation energies of ~ 63 meV in CaMn2As2 and 44 meV in SrMn2As2 . The experimental results thus reveal that both (Ca , Sr) Mn2As2 materials are AFM insulators at low temperatures and in analogy with the high Tc cuprates, may be potential parent compounds for CaAl2Si2-type superconductors. Work was supported by the USDOE under Contract No. DE-AC02-07CH11358.

  14. Cascade phonon-assisted trapping of positrons by divacancies in n-FZ-Si(P) single crystals irradiated with 15 MeV protons

    NASA Astrophysics Data System (ADS)

    Arutyunov, N. Yu.; Emtsev, V. V.; Krause-Rehberg, R.; Kessler, C.; Elsayed, M.; Oganesyan, G. A.; Kozlovski, V. V.

    2014-02-01

    The trapping of positrons by the radiation defects in moderately doped oxygen-lean n-FZ-Si(P) single crystal irradiated with 15 MeV protons has been investigated in a comparative way using the positron lifetime spectroscopy and Hall effect measurements. The experiments were carried out within a wide temperature interval ranging from 25 K - 29 K to 300 K. The positron trapping rate for divacancies was reconstructed in the course of many-stage isochronal annealing. The concentration and the charged states of divacancies (V2- and V2--) were estimated. The temperature dependency of the trapping cross section of positrons by the negatively charged divacancies is in a good agreement with the data of calculations based on the assumptions of the cascade phonon-assisted mechanism of exchange of the energy between the positron and acoustic long-wave phonons. Obeying ˜ T-3 law, the cross-section of the trapping of positrons by divacancies changes considerably ranging from ˜1.7×10-12 cm2 (66 - 100 K) to ˜2×10-14 cm2 (≈ 250 K). The characteristic length of trapping of the positron by V2-- divacancy was estimated to be l0(V2--)≈(3.4±0.2)×10-8 cm.

  15. Calculation of Mass Transfer Coefficients in a Crystal Growth Chamber through Heat Transfer Measurements

    SciTech Connect

    Bell, J H; Hand, L A

    2005-04-21

    The growth rate of a crystal in a supersaturated solution is limited by both reaction kinetics and the local concentration of solute. If the local mass transfer coefficient is too low, concentration of solute at the crystal-solution interface will drop below saturation, leading to a defect in the growing crystal. Here, mass transfer coefficients are calculated for a rotating crystal growing in a supersaturated solution of potassium diphosphate (KDP) in water. Since mass transfer is difficult to measure directly, the heat transfer coefficient of a scale model crystal in water is measured using temperature-sensitive paint (TSP). To the authors' knowledge this is the first use of TSP to measure temperatures in water. The corresponding mass transfer coefficient is then calculated using the Chilton- Colburn analogy. Measurements were made for three crystal sizes at two running conditions each. Running conditions include periodic reversals of rotation direction. Heat transfer coefficients were found to vary significantly both across the crystal faces and over the course of a rotation cycle, but not from one face to another. Mean heat transfer coefficients increased with both crystal size and rotation rate. Computed mass transfer coefficients were broadly in line with expectations from the full-scale crystal growth experiments. Additional experiments show that continuous rotation of the crystal results in about a 30% lower heat transfer compared to rotation with periodic reversals. The continuous rotation case also shows a periodic variation in heat transfer coefficient of about 15%, with a period about 1/20th of the rotation rate.

  16. Comparative study of the absorption spectrum of Li 2CaSiO 4:Cr 4+: First-principles fully relativistic and crystal field calculations

    NASA Astrophysics Data System (ADS)

    Brik, M. G.; Ogasawara, K.

    2007-11-01

    Systematic analysis of the energy level scheme and ground state absorption of the Cr4+ ion in Li2CaSiO4 crystal was performed using the exchange charge model of the crystal field [B.Z. Malkin, in: A.A. Kaplyanskii, B.M. Macfarlane (Eds.), Spectroscopy of Solids Containing Rare-earth Ions, North-Holland, Amsterdam, 1987, pp. 33-50] and recently developed first-principles approach to the analysis of the absorption spectra of impurity ions in crystals based on the discrete variational multielectron (DVME) method [K. Ogasawara, T. Iwata, Y. Koyama, T. Ishii, I. Tanaka, H. Adachi, Phys. Rev. B 64 (2001) 115413]. Using the former method, the values of parameters of crystal field acting on the Cr4+ ion valence electrons were calculated using the Li2CaSiO4 crystal structure data. Energy levels of the Cr4+ ion obtained after diagonalizing the crystal field Hamiltonian are in good agreement with those obtained from the experimental spectra. The latter method is based on the numerical solution of the Dirac equation; therefore, all relativistic effects are automatically considered. As a result, energy level scheme of Cr4+ and its absorption spectra in both polarizations were calculated, assigned and compared with experimental data; energy of the lowest charge transfer transition was evaluated and compared with theoretical predictions for the CrO44- complex available in the literature. The main features of the experimental spectra shape are reproduced well by the calculations. By performing analysis of the molecular orbitals (MO) population, it was shown that the covalent effects play an important role in formation of the spectral properties of Cr4+ ion in the considered crystal.

  17. TEM investigation of the surface layer structure [111]{sub B2} of the single NiTi crystal modified by the Si-ion beam implantation

    SciTech Connect

    Girsova, S. L. Poletika, T. M.; Meisner, S. N. Meisner, L. L.

    2015-10-27

    The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]{sub B2} was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.

  18. Progress Toward an Absolute Measurement of Electron Impact Excitation of Si^2+

    NASA Astrophysics Data System (ADS)

    Reisenfeld, D. B.; Janzen, P. H.; Gardner, L. D.; Kohl, J. L.

    1997-04-01

    We are in the process of measuring the electron impact excitation (EIE) absolute rate coefficients for Si^2+(3s^2 ^1S - 3s3p ^1P) and Si^2+(3s3p ^3P^o - 3p^2 ^3P) for energies near threshold. A beams modulation technique with inclined electron and ion beams is being used. The radiation from the excited ions at λ 120.6 nm and λ 130.0 nm is detected using an absolutely calibrated optical system that subtends slightly over π steradians. The population of the Si^2+(3s3p ^3P^o) metastable state in the incident ion beam is determined by making an absolute measurement of the intensity of the λ 189.2 nm light from the beam due to radiative decay of the metastable state(G. P. Layfatis and J. L. Kohl, Phys. Rev. A 36), 59 (1987).. Because of the high density of overlapping resonances above threshold, the cross sections should exhibit a complex energy dependence(D. C. Griffin et al)., Phys. Rev. A 47, 2871 (1993).. We expect to resolve some of this structure. Research progress and the experimental apparatus will be described. There are no previous measurements of EIE in a Mg-like system, nor of EIE in a metastable ion. This work was supported in part by NASA Supporting Research and Technology Program in Solar Physics grant NAGW-1687 and NASA Training Grant NGT-51081.

  19. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    SciTech Connect

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

  20. Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

    NASA Astrophysics Data System (ADS)

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2016-04-01

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/ m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed-epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g· b and g· b× l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed-homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Finally, the implication of these results for improving the LTC growth process is addressed.

  1. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    DOE PAGES

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match themore » polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.« less

  2. Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

    SciTech Connect

    Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

    2010-04-30

    The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

  3. Observing cirrus halos to constrain in-situ measurements of ice crystal size

    NASA Astrophysics Data System (ADS)

    Garrett, T. J.; Kimball, M. B.; Mace, G. G.; Baumgardner, D. G.

    2007-01-01

    In this study, characteristic optical sizes of ice crystals in synoptic cirrus are determined using airborne measurements of ice crystal size distributions, optical extinction and water content. The measurements are compared with coincident visual observations of ice cloud optical phenomena, in particular the 22° and 46° halos. In general, the scattering profiles derived from the in-situ cloud probe measurements are consistent with the observed halo characteristics. It is argued that this implies that the measured ice crystals were small, probably with characteristic optical radii between 10 and 20 μm. There is a current contention that in-situ measurements of high concentrations of small ice crystals reflect artifacts from the shattering of large ice crystals on instrument inlets. Significant shattering cannot be entirely excluded using this approximate technique, but it is not indicated. On the basis of the in-situ measurements, a parameterization is provided that relates the optical effective radius of ice crystals to the temperature in mid-latitude synoptic cirrus.

  4. Characterization by XDR of amorphous SiCx/c-Si structures at high temperatures

    NASA Astrophysics Data System (ADS)

    Torres, I.

    2011-09-01

    By annealing thin hydrogenated amorphous silicon carbide (a-SiCx:H) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on crystalline silicon (c-Si) wafers, pn-junctions with very low inverse saturation current can be formed. This has been shown in heterojunction bipolar transistors and solar cells with +/- 400°C for this process. The characterization of these structures indicates that a-SiCx:H films partially re-crystallize during the annealing process forming Si-nanocrystals embedded in the amorphous film. Understanding this process and further improving the pn-junction the study of the re-crystallization process by X-Ray Diffraction (XRD) measurements has been done. This paper deals with the characterization of amorphous SiCx/c-Si structures with 100 and 300 nm thickness measured by XRD with the temperature chamber with an annealing process at 900°C. Both intrinsic and phosphorus-doped a-SiCx:H films were deposited on a c-Si substrate p-type of 300um-thickness with crystallographic orientation <100> using the PECVD reactor. From the in-situ measurements using the XDR, the crystallization phase was obtained; this was done by taking the maximum value of intensity at the dominant peak in the orientation <111> and normalization. Fitting this with the Avrami-Mehl-Johnson Theory the incubation as well as the crystallization time were obtained to study the thermally activated process.

  5. Surfactant-assisted hydrothermal crystallization of nanostructured lithium metasilicate (Li{sub 2}SiO{sub 3}) hollow spheres: (I) Synthesis, structural and microstructural characterization

    SciTech Connect

    Ortiz-Landeros, J.

    2011-05-15

    Lithium metasilicate (Li{sub 2}SiO{sub 3}) was successfully synthesized using a hydrothermal process in the presence of different surfactants with cationic, non-ionic and anionic characters. The samples obtained were compared to a sample prepared by the conventional solid-state reaction method. The structural and microstructural characterizations of different Li{sub 2}SiO{sub 3} powders were performed using various techniques. Diffraction analyses revealed the successful crystallization of pure Li{sub 2}SiO{sub 3} single phase by hydrothermal technique, even without further heat-treatments and independent of the surfactant used. Electron microscopy analyses revealed that Li{sub 2}SiO{sub 3} powders were composed of uniform micrometric particles with a hollow sphere morphology and nanostructured walls. Finally, different thermal analyses showed that Li{sub 2}SiO{sub 3} samples preserved their structure and microstructure after further thermal treatments. Specific aspects regarding the formation mechanism of the spherical aggregates under hydrothermal conditions are discussed, and there is a special emphasis on the effect of the synthesis pathway on the morphological characteristics. -- Graphical abstract: Li{sub 2}SiO{sub 3} was synthesized using a hydrothermal process in the presence of different surfactants. Li{sub 2}SiO{sub 3} powders were composed of uniform micrometric particles with a hollow sphere morphology and nanostructured walls. Display Omitted Highlights: {yields} Pure Li{sub 2}SiO{sub 3} was synthesized by the hydrothermal method. {yields} Surfactant addition produced microstructural and morphological variations. {yields} TEM reveled the generation of nanostructured hollow spheres.

  6. Effects of contact resistance on electrical conductivity measurements of SiC-based materials

    SciTech Connect

    Youngblood, G. E.; Thomsen, E. C.; Henager, C. H.

    2013-11-01

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (Rc) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ~973 K. The Rc-values behaved similarly for each type of metallic electrode: Rc > ~1000 Ω cm2 at RT, decreasing continuously to ~1–10 Ω cm2 at 973 K. The temperature dependence of the inverse Rc indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. Finally, for the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

  7. Nanosecond pulsed laser damage characteristics of HfO2/SiO2 high reflection coatings irradiated from crystal-film interface.

    PubMed

    Cheng, Xinbin; Jiao, Hongfei; Lu, Jiangtao; Ma, Bin; Wang, Zhanshan

    2013-06-17

    The nano-precursors in the subsurface of Nd:YLF crystal were limiting factor that decreased the laser-induced damage threshold (LIDT) of HfO(2)/SiO(2) high reflection (HR) coatings irradiated from crystal-film interface. To investigate the contribution of electric-field (E-field) to laser damage originating from nano-precursors and then to probe the distribution of vulnerable nano-precursors in the direction of subsurface depth, two 1064 nm HfO(2)/SiO(2) HR coatings having different standing-wave (SW) E-field distributions in subsurface of Nd:YLF c5424181043036123rystal were designed and prepared. Artificial gold nano-particles were implanted into the crystal-film interface prior to deposition of HR coatings to study the damage behaviors in a more reliable way. The damage test results revealed that the SW E-field rather than the travelling-wave (TW) E-field contributed to laser damage. By comparing the SW E-field distributions and LIDTs of two HR coating designs, the most vulnerable nano-precursors were determined to be concentrated in a thin redeposition layer that is within 100 nm from the crystal-film interface.

  8. In-situ measurement of bound states in the continuum in photonic crystal slabs (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kalchmair, Stefan; Gansch, Roman; Genevet, Patrice; Zederbauer, Tobias; MacFarland, Donald; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried; Capasso, Federico; Loncar, Marko

    2016-04-01

    Photonic crystal slabs have been subject to research for more than a decade, yet the existence of bound states in the radiation continuum (BICs) in photonic crystals has been reported only recently [1]. A BIC is formed when the radiation from all possible channels interferes destructively, causing the overall radiation to vanish. In photonic crystals, BICs are the result of accidental phase matching between incident, reflected and in-plane waves at seemingly random wave vectors [2]. While BICs in photonic crystals have been discussed previously using reflection measurements, we reports for the first time in-situ measurements of the bound states in the continuum in photonic crystal slabs. By embedding a photodetector into a photonic crystal slab we were able to directly observe optical BICs. The photonic crystal slabs are processed from a GaAs/AlGaAs quantum wells heterostructure, providing intersubband absorption in the mid-infrared wavelength range. The generated photocurrent is collected via doped contact layers on top and bottom of the suspended photonic crystal slab. We were mapping out the photonic band structure by rotating the device and by acquiring photocurrent spectra every 5°. Our measured photonic bandstructure revealed several BICs, which was confirmed with a rigorously coupled-wave analysis simulation. Since coupling to external fields is suppressed, the photocurrent measured by the photodetector vanishes at the BIC wave vector. To confirm the relation between the measured photocurrent and the Q-factor we used temporal coupled mode theory, which yielded an inverse proportional relation between the photocurrent and the out-coupling loss from the photonic crystal. Implementing a plane wave expansion simulation allowed us to identify the corresponding photonic crystal modes. The ability to directly measure the field intensity inside the photonic crystal presents an important milestone towards integrated opto-electronic BIC devices. Potential

  9. Plasma crystal dynamics measured with a three-dimensional plenoptic camera.

    PubMed

    Jambor, M; Nosenko, V; Zhdanov, S K; Thomas, H M

    2016-03-01

    Three-dimensional (3D) imaging of a single-layer plasma crystal was performed using a commercial plenoptic camera. To enhance the out-of-plane oscillations of particles in the crystal, the mode-coupling instability (MCI) was triggered in it by lowering the discharge power below a threshold. 3D coordinates of all particles in the crystal were extracted from the recorded videos. All three fundamental wave modes of the plasma crystal were calculated from these data. In the out-of-plane spectrum, only the MCI-induced hot spots (corresponding to the unstable hybrid mode) were resolved. The results are in agreement with theory and show that plenoptic cameras can be used to measure the 3D dynamics of plasma crystals.

  10. Plasma crystal dynamics measured with a three-dimensional plenoptic camera.

    PubMed

    Jambor, M; Nosenko, V; Zhdanov, S K; Thomas, H M

    2016-03-01

    Three-dimensional (3D) imaging of a single-layer plasma crystal was performed using a commercial plenoptic camera. To enhance the out-of-plane oscillations of particles in the crystal, the mode-coupling instability (MCI) was triggered in it by lowering the discharge power below a threshold. 3D coordinates of all particles in the crystal were extracted from the recorded videos. All three fundamental wave modes of the plasma crystal were calculated from these data. In the out-of-plane spectrum, only the MCI-induced hot spots (corresponding to the unstable hybrid mode) were resolved. The results are in agreement with theory and show that plenoptic cameras can be used to measure the 3D dynamics of plasma crystals. PMID:27036775

  11. Mo{sub 2}NiB{sub 2}-type (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} and La{sub 2}Ni{sub 3}-type (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} compounds: Crystal structure and magnetic properties

    SciTech Connect

    Morozkin, A.V.; Isnard, O.; Nirmala, R.; Malik, S.K.

    2015-05-15

    The crystal structure of new Mo{sub 2}NiB{sub 2}-type (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} (Immm, No. 71, oI10) and La{sub 2}Ni{sub 3}-type (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} (Cmce No. 64, oC20) compounds has been established using powder X-ray diffraction studies. Magnetization measurements show that the Mo{sub 2}NiB{sub 2}-type Gd{sub 2}Ni{sub 2.35}Si{sub 0.65} undergoes a ferromagnetic transition at ~66 K, whereas isostructural Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} shows an antiferromagnetic transition at ~52 K and a field-induced metamagnetic transition at low temperatures. Neutron diffraction study shows that, in zero applied field, Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} exhibits c-axis antiferromagnetic order with propagation vector K=[1/2, 0, 1/2] below its magnetic ordering temperature and Tb magnetic moment reaches a value of 8.32(5) μ{sub B} at 2 K. The La{sub 2}Ni{sub 3}-type Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} exhibits ferromagnetic like transition at ~42 K with coexisting antiferromagnetic interactions and field induced metamagnetic transition below ~17 K. The magnetocaloric effect of Gd{sub 2}Ni{sub 2.35}Si{sub 0.65}, Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} is calculated in terms of isothermal magnetic entropy change and it reaches a maximum value of −14.3 J/kg K, −5.3 J/kg K and −10.3 J/kg K for a field change of 50 kOe near 66 K, 52 K and 42 K, respectively. Low temperature magnetic ordering with enhanced anisotropic effects in Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.35}Si{sub 0.65} is accompanied by a positive magnetocaloric effect with isothermal magnetic entropy changes of +12.8 J/kg K and ~+9.9 J/kg K, respectively at 7 K for a field change of 50 kOe. - Graphical abstract: The (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} supplement the series of Mo{sub 2}NiB{sub 2}-type rare earth compounds, whereas the (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} supplement the series of La{sub 2}Ni{sub 3}-type rare

  12. Optical reflectance of pyrheliometer absorption cavities: progress toward SI-traceable measurements of solar irradiance.

    PubMed

    Patrick, Heather J; Germer, Thomas A; Zarobila, Clarence J; Cooksey, Catherine C; Yoon, Howard W

    2016-08-10

    We have accurately determined the absorptance of three pyrheliometer cavities at 532 nm by measuring the residual reflectance using an angle-resolved bidirectional reflectometer. Measurements were performed at a normal incidence as a function of the viewing angle and position on the cavity cone. By numerically integrating the measured angle-resolved scatter over both the direction and position and accounting for an obstructed view of the cavity, we determined that the effective cavity reflectance was between 8×10-4 and 9×10-4. Thus, the absorptance of the three cavities ranged from 0.99909±0.00014 to 0.99922±0.00012 (k=2 combined expanded uncertainties). These measurements, when extended over the spectral range of operation of the pyrheliometer, are required to establish SI traceability for absolute solar irradiance measurements. PMID:27534478

  13. Ultrafast visualization of crystallization and grain growth in shock-compressed SiO2

    PubMed Central

    Gleason, A. E.; Bolme, C. A.; Lee, H. J.; Nagler, B.; Galtier, E.; Milathianaki, D.; Hawreliak, J.; Kraus, R. G.; Eggert, J. H.; Fratanduono, D. E.; Collins, G. W.; Sandberg, R.; Yang, W.; Mao, W. L.

    2015-01-01

    Pressure- and temperature-induced phase transitions have been studied for more than a century but very little is known about the non-equilibrium processes by which the atoms rearrange. Shock compression generates a nearly instantaneous propagating high-pressure/temperature condition while in situ X-ray diffraction (XRD) probes the time-dependent atomic arrangement. Here we present in situ pump–probe XRD measurements on shock-compressed fused silica, revealing an amorphous to crystalline high-pressure stishovite phase transition. Using the size broadening of the diffraction peaks, the growth of nanocrystalline stishovite grains is resolved on the nanosecond timescale just after shock compression. At applied pressures above 18 GPa the nuclueation of stishovite appears to be kinetically limited to 1.4±0.4 ns. The functional form of this grain growth suggests homogeneous nucleation and attachment as the growth mechanism. These are the first observations of crystalline grain growth in the shock front between low- and high-pressure states via XRD. PMID:26337754

  14. Ultrafast visualization of crystallization and grain growth in shock-compressed SiO2

    DOE PAGES

    Gleason, A. E.; Bolme, C. A.; Lee, H. J.; Nagler, B.; Galtier, E.; Milathianaki, D.; Hawreliak, J.; Kraus, R. G.; Eggert, J. H.; Fratanduono, D. E.; et al

    2015-09-04

    Pressure- and temperature-induced phase transitions have been studied for more than a century but very little is known about the non-equilibrium processes by which the atoms rearrange. Shock compression generates a nearly instantaneous propagating high-pressure/temperature condition while in situ X-ray diffraction (XRD) probes the time-dependent atomic arrangement. Here we present in situ pump–probe XRD measurements on shock-compressed fused silica, revealing an amorphous to crystalline high-pressure stishovite phase transition. Using the size broadening of the diffraction peaks, the growth of nanocrystalline stishovite grains is resolved on the nanosecond timescale just after shock compression. At applied pressures above 18 GPa the nuclueationmore » of stishovite appears to be kinetically limited to 1.4±0.4 ns. The functional form of this grain growth suggests homogeneous nucleation and attachment as the growth mechanism. As a result, these are the first observations of crystalline grain growth in the shock front between low- and high-pressure states via XRD.« less

  15. Magnetic Field Measurements Based on Terfenol Coated Photonic Crystal Fibers

    PubMed Central

    Quintero, Sully M. M.; Martelli, Cicero; Braga, Arthur M. B.; Valente, Luiz C. G.; Kato, Carla C.

    2011-01-01

    A magnetic field sensor based on the integration of a high birefringence photonic crystal fiber and a composite material made of Terfenol particles and an epoxy resin is proposed. An in-fiber modal interferometer is assembled by evenly exciting both eigenemodes of the HiBi fiber. Changes in the cavity length as well as the effective refractive index are induced by exposing the sensor head to magnetic fields. The magnetic field sensor has a sensitivity of 0.006 (nm/mT) over a range from 0 to 300 mT with a resolution about ±1 mT. A fiber Bragg grating magnetic field sensor is also fabricated and employed to characterize the response of Terfenol composite to the magnetic field. PMID:22247655

  16. Magnetic field measurements based on Terfenol coated photonic crystal fibers.

    PubMed

    Quintero, Sully M M; Martelli, Cicero; Braga, Arthur M B; Valente, Luiz C G; Kato, Carla C

    2011-01-01

    A magnetic field sensor based on the integration of a high birefringence photonic crystal fiber and a composite material made of Terfenol particles and an epoxy resin is proposed. An in-fiber modal interferometer is assembled by evenly exciting both eigenemodes of the HiBi fiber. Changes in the cavity length as well as the effective refractive index are induced by exposing the sensor head to magnetic fields. The magnetic field sensor has a sensitivity of 0.006 (nm/mT) over a range from 0 to 300 mT with a resolution about ±1 mT. A fiber Bragg grating magnetic field sensor is also fabricated and employed to characterize the response of Terfenol composite to the magnetic field.

  17. Physical property measurements of doped cesium iodide crystals

    NASA Technical Reports Server (NTRS)

    Synder, R. S.; Clotfelter, W. N.

    1974-01-01

    Mechanical and thermal property values are reported for crystalline cesium iodide doped with sodium and thallium. Young's modulus, bulk modulus, shear modulus, and Poisson's ratio were obtained from ultrasonic measurements. Young's modulus and the samples' elastic and plastic behavior were also measured under tension and compression. Thermal expansion and thermal conductivity were the temperature dependent measurements that were made.

  18. Infrared measurement of undercooling during silicon solidification on bare and Si3N4 coated quartz substrates

    NASA Astrophysics Data System (ADS)

    Yang, C. F.; Tsoutsouva, M. G.; Hsu, H. P.; Lan, C. W.

    2016-11-01

    Undercooling is one of the most significant parameters in the solidification of silicon since it controls the grain structure formation, which determines the final performance of solar cell. Here a new and simple experimental facility is proposed to provide reliable undercooling values and visualize the melting-solidification process when silicon solidifies on a bare and a Si3N4 coated quartz (SiO2) substrate. A lamp heating system was used for the melting, the undercooling temperature was measured with the aid of an infrared single-color pyrometer while the morphologies of the growing silicon on the SiO2 and Si3N4-coated SiO2 substrates are also investigated through a digital microscope. The high precision and accuracy of the given undercooling values when using the present setup comes from the principle of minimizing the background radiation that can significantly influence the pyrometer measurements.

  19. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: Crystal structure and magnetic properties of Nd(Mn1-xFex)2Si2 compounds

    NASA Astrophysics Data System (ADS)

    Chen, Ye-Qing; Luo, Jun; Liang, Jing-Kui; Li, Jing-Bo; Rao, Guang-Hui

    2009-11-01

    X-ray powder diffraction, resistivity and magnetization studies have been performed on polycrystalline Nd(FexMn1-x)2Si2 (0 <= x <= 1) compounds which crystallize in a ThCr2Si2-type structure with the space group I4/mmm. The field-cooled temperature dependence of the magnetization curves shows that, at low temperatures, NdFe2Si2 is antiferromagnetic, while the other compounds show ferromagnetic behaviour. The substitution of Fe for Mn leads to a decrease in lattice parameters a, c and unit-cell volume V. The Curie temperature of the compounds first increases, reaches a maximum around x = 0.7, then decreases with Fe content. However, the saturation magnetization decreases monotonically with increasing Fe content. This Fe concentration dependent magnetization of Nd(FexMn1-x)2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe. The temperature's square dependence on electrical resistivity indicates that the curve of Nd(Fe0.6Mn0.4)2Si2 has a quasi-linear character above its Curie temperature, which is typical of simple metals.

  20. Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

    SciTech Connect

    Yakushev, M. V. Gutakovsky, A. K.; Sabinina, I. V.; Sidorov, Yu. G.

    2011-07-15

    Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te{sub 2} vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68 Degree-Sign . The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.

  1. Nb{sub 2}OsB{sub 2}, with a new twofold superstructure of the U{sub 3}Si{sub 2} type: Synthesis, crystal chemistry and chemical bonding

    SciTech Connect

    Mbarki, Mohammed; Touzani, Rachid St.; Fokwa, Boniface P.T.

    2013-07-15

    The new ternary metal-rich boride, Nb{sub 2}OsB{sub 2}, was synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The compound was characterized from single-crystal X-ray data and EDX measurements. It crystallizes as a new superstructure (space group P4/mnc, no. 128) of the tetragonal U{sub 3}Si{sub 2}-structure type with lattice parameters a=5.922(1) Å and c=6.879(2) Å. All of the B atoms are involved in B{sub 2} dumbbells with B–B distances of 1.89(4) Å. Structure relaxation using VASP (Vienna ab intio Simulation Package) has confirmed the space group and the lattice parameters. According to electronic structure calculations (TB–LMTO–ASA), the homoatomic B–B interactions are optimized and very strong, but relatively strong heteroatomic Os–B, Nb–B and Nb–Os bonds are also found: These interactions, which together build a three-dimensional network, are mainly responsible for the structural stability of this new phase. The density of state at the Fermi level predicts metallic behavior, as expected, from this metal-rich boride. - Graphical abstract: Nb{sub 2}OsB{sub 2} is, to the best of our knowledge, the first fully characterized phase in the ternary Nb–Os–B system. It crystallizes (space group P4/mnc, 128) with a new twofold superstructure of the U{sub 3}Si{sub 2} structure type (space group P4/mbm, 127), and is therefore the first boride in this structure family crystallizing with a superstructure of the U{sub 3}Si{sub 2} structure type. We show that the distortions leading to this superstructure occurs mainly in the Nb-layer, which tries to accommodate the large osmium atoms. The consequence of this puckering is the building osmium dumbbells instead of chains along [001]. - Highlights: • First compound in the Nb–Os–B system. • New twofold superstructure of U{sub 3}Si{sub 2} structure type. • Puckering of Nb-layer responsible for superstructure occurrence. • Chemical bonding studied

  2. Multiple-Component Crystal Fabric Measurements from Acoustically-Generated Normal Modes in Borehole

    NASA Astrophysics Data System (ADS)

    Kluskiewicz, D. J.; Waddington, E. D.; McCarthy, M.; Anandakrishnan, S.; Voigt, D.; Matsuoka, K.

    2014-12-01

    Sound wave velocities in ice are a proxy of crystal orientation fabric. Because p- and s-waves respectively travel faster and slower in the direction of an ice crystal c-axis, the velocities of these waves in a fabric are related to the clustering of ice crystal c-axes in the direction of wave propagation. Previous sonic logs at Dome C, NGRIP, WAIS, and NEEM have inferred a single component fabric description from the velocities of vertically-propagating p-waves around each ice core borehole. These records supplement thin-section measurements of crystal fabric by sampling larger numbers of crystals in a depth-continuous log. Observations of azimuthally anisotropic vertical-girdle fabrics at ice-core sites such as WAIS, NGRIP, and EDML underly a benefit for logging methods that are sensitive to such fabrics. We present a theoretical framework for using borehole flexural modes to measure azimuthal crystal-fabric anisotropy, and describe ongoing efforts to develop a sonic logging tool for this purpose. We also present data from p-wave logs and thin section measurements at the WAIS Divide, and describe how a flexural wave log could supplement the existing measurements.

  3. A combined metal-halide/metal flux synthetic route towards type-I clathrates: crystal structures and thermoelectric properties of A8Al8Si38 (A = K, Rb, and Cs).

    PubMed

    Baran, Volodymyr; Senyshyn, Anatoliy; Karttunen, Antti J; Fischer, Andreas; Scherer, Wolfgang; Raudaschl-Sieber, Gabriele; Fässler, Thomas F

    2014-11-10

    Single-phase samples of the compounds K8Al8Si38 (1), Rb8Al8Si38 (2), and Cs7.9Al7.9Si38.1 (3) were obtained with high crystallinity and in good quantities by using a novel flux method with two different flux materials, such as Al and the respective alkali-metal halide salt (KBr, RbCl, and CsCl). This approach facilitates the removal of the product mixture from the container and also allows convenient extraction of the flux media due to the good solubility of the halide salts in water. The products were analyzed by means of single-crystal X-ray structure determination, powder X-ray and neutron diffraction experiments, (27)Al-MAS NMR spectroscopy measurements, quantum chemical calculations, as well as magnetic and transport measurements (thermal conductivity, electrical resistivity, and Seebeck coefficient). Due to the excellent quality of the neutron diffraction data, the difference between the nuclear scattering factors of silicon and aluminum atoms was sufficient to refine their mixed occupancy at specific sites. The role of variable-range hopping for the interpretation of the resistivity and the Seebeck coefficient is discussed. PMID:25267571

  4. Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt

    NASA Astrophysics Data System (ADS)

    Sueoka, Koji; Kamiyama, Eiji; Vanhellemont, Jan

    2013-10-01

    Density functional theory (DFT) calculations are performed to obtain the formation energies of the vacancy V and the self-interstitial I at all sites within a sphere around the dopant atom with 6 Å radius for V and 5 Å radius for I in Si crystals. Substitutional p-type (B and Ga), neutral (C, Ge, and Sn), and n-type (P, As, Sb, and Bi) dopants were considered. The results show that the formation energies of V and I around dopant atoms change depending on the types and sizes of the dopants, i.e., depending on the electrical state and the local strain around the dopants. The dependence of the total thermal equilibrium concentrations of point defects (sum of free V or I and V or I around the dopants) at melting temperature on the type and concentration of each dopant is obtained. Further DFT calculations reveal that most of the total incorporated point defects from the melt contribute to pair recombination. An appropriate model of point defect behavior in heavily doped single crystal Si growing from a melt is proposed on the basis of DFT calculations. (1) The incorporated total V and I concentrations at melting point depend on the types and concentrations of dopants. (2) Most of the total V and I concentrations during Si crystal growth contribute to the pair recombination at temperatures much higher than those to form grown-in defects. The Voronkov model successfully explains all reported experimental results on intrinsic point defect behavior dependence on dopant type and concentration for heavily doped Si while taking the present model into consideration.

  5. Local symmetry breaking of a thin crystal structure of β-Si3N4 as revealed by spherical aberration corrected high-resolution transmission electron microscopy images.

    PubMed

    Kim, Hwang Su; Zhang, Zaoli; Kaiser, Ute

    2012-06-01

    This report is an extension of the study for structural imaging of 5-6 nm thick β-Si(3)N(4) [0001] crystal with a spherical aberration corrected transmission electron microscope by Zhang and Kaiser [2009. Structure imaging of β-Si(3)N(4) by spherical aberration-corrected high-resolution transmission electron microscopy. Ultramicroscopy 109, 1114-1120]. In this work, a local symmetry breaking with an uneven resolution of dumbbells in the six-membered rings revealed in the reported images in the study of Zhang and Kaiser has been analyzed in detail. It is found that this local asymmetry in the image basically is not relevant to a slight mistilt of the specimen and/or a beam tilt (coma). Rather the certain variation of the tetrahedral bond length of Si-N(4) in the crystal structure is found to be responsible for the uneven resolution with a local structural variation from region to region. This characteristic of the variation is also supposed to give a distorted lattice of apparently 2°-2.5° deviations from the perfect hexagonal unit cell as observed in the reported image in the work of Zhang and Kaiser. It is discussed that this variation may prevail only in a thin specimen with a thickness ranging ~≤ 5-6 nm. At the same time, it is noted that the average of the bond length variation is close to the fixed length known in a bulk crystal of β-Si(3)N(4).

  6. Measurement of Stress/Strain in Single-Crystal Samples using Diffraction

    SciTech Connect

    Yan,H.; Noyan, I.

    2006-01-01

    Diffraction profiles from an Si-single-crystal strip deformed in cantilever bending are presented as a function of tip displacement and incident-beam energy. Data obtained with slit-based diffracted-beam optics contain a secondary peak in addition to the primary 004 reflection for all energies when the bending strain is finite. This secondary peak can be identified as a 'mirage' peak, predicted by dynamical diffraction theory to occur in weakly deformed single-crystal samples. The integrated intensity of this mirage peak increases with increasing energy and tip displacement and exceeds the primary peak intensity at higher values. The mirage peak disappears when a monochromator is used in the diffracted-beam path. Data that show the effect of these mirage peaks on X-ray diffraction strain analysis are presented, and it is shown that a diffracted-beam monochromator may be used to eliminate these errors.

  7. The measurement results of carbon ion beam structure extracted by bent crystal from U-70 accelerator

    NASA Astrophysics Data System (ADS)

    Afonin, A. G.; Barnov, E. V.; Britvich, G. I.; Chesnokov, Yu A.; Chirkov, P. N.; Durum, A. A.; Kostin, M. Yu; Maisheev, V. A.; Pitalev, V. I.; Reshetnikov, S. F.; Yanovich, A. A.; Nazhmudinov, R. M.; Kubankin, A. S.; Shchagin, A. V.

    2016-07-01

    The carbon ion +6C beam with energy 25 GeV/nucleon was extracted by bent crystal from the U-70 ring. The bent angle of silicon crystal was 85 mrad. About 2×105 particles for 109 circulated ions in the ring were observed in beam line 4a after bent crystal. Geometrical parameters, time structure and ion beam structure were measured. The ability of the bent monocrystal to extract and generate ion beam with necessary parameters for regular usage in physical experiments is shown in the first time.

  8. Genetically designed L3 photonic crystal nanocavities with measured quality factor exceeding one million

    SciTech Connect

    Lai, Y.; Badolato, A.; Pirotta, S.; Urbinati, G.; Gerace, D.; Galli, M.; Minkov, M.; Savona, V.

    2014-06-16

    We report on the experimental realization of ultra-high quality factor (Q) designs of the L3-type photonic crystal nanocavity. Based on genetic optimization of the positions of few nearby holes, our design drastically improves the performance of the conventional L3 as experimentally confirmed by direct measurement of Q ≃ 2 × 10{sup 6} in a silicon-based photonic crystal membrane. Our devices rank among the highest Q/V ratios ever reported in photonic crystal cavities, holding great promise for the realization of integrated photonic platforms based on ultra-high-Q resonators.

  9. Integrated reflectivity measurements of hydrogen phthalate crystals for high-resolution soft x-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Zastrau, U.; Förster, E.

    2014-09-01

    The integrated x-ray reflectivity of Potassium Hydrogen Phthalate (KAP) and Rubidium Hydrogen Phthalate (RAP) crystals is studied at a photon energy of (1740±14) eV using a double-crystal setup. The absolute measured reflectivities are in < 5% agreement with the values predicted by the dynamic diffraction theory for perfect crystals when absorption is included. Within 4% experimental error margins, specimen that were exposed to ambient conditions over many years show identical reflectivity as specimen that were cleaved just before the measurement. No differences are observed between cleaving off a 10 μm surface layer and splitting the entire crystal bulk of 2 mm thickness. We conclude that at 1.7 keV photon energy the penetration depth of ~ 1 μm is large compared to a potentially deteriorated surface layer of a few 10 nm.

  10. Flexible tactile sensor for shear stress measurement using transferred sub-µm-thick Si piezoresistive cantilevers

    NASA Astrophysics Data System (ADS)

    Noda, Kentaro; Onoe, Hiroaki; Iwase, Eiji; Matsumoto, Kiyoshi; Shimoyama, Isao

    2012-11-01

    We propose a flexible tactile sensor using sub-µm-thick Si piezoresistive cantilevers for shear stress detection. The thin Si piezoresistive cantilevers were fabricated on the device layer of a silicon on insulator (SOI) wafer. By using an adhesion-based transfer method, only these thin and fragile cantilevers were transferred from the rigid handling layer of the SOI wafer to the polydimethylsiloxane layer without damage. Because the thin Si cantilevers have high durability of bending, the proposed sensor can be attached to a thin rod-type structure serving as the finger of a robotic hand. The cantilevers were arrayed in orthogonal directions to measure the X and Y directional components of applied shear stresses independently. We evaluated the bending durability of our flexible tactile sensor and confirmed that the sensor can be attached to a rod with a radius of 10 mm. The sensitivity of the flexible tactile sensor attached to a curved surface was 1.7 × 10-6 Pa-1 on average for a range of shear stresses from -1.8 × 103 to 1.8 × 103 Pa applied along its surface. It independently detected the X and Y directional components of the applied shear stresses.

  11. Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates

    NASA Astrophysics Data System (ADS)

    Sakita, Shinya; Hara, Shinjiro; Elm, Matthias T.; Klar, Peter J.

    2016-01-01

    We report on selective-area metal-organic vapor phase epitaxy and magnetic characterization of coupled MnAs/AlGaAs nanoclusters formed on thin Al2O3 insulating layers crystallized on Si(111) substrates. Cross-sectional transmission electron microscopy reveals that poly-crystalline γ-Al2O3 grains are formed after an annealing treatment of the amorphous Al2O3 layers deposited by atomic layer deposition on Si(111) substrates. The ⟨111⟩ direction of the γ-Al2O3 grains tends to be oriented approximately parallel to the ⟨111⟩ direction of the Si substrate. We observe that hexagonal MnAs nanoclusters on AlGaAs buffer layers grown by selective-area metal-organic vapor phase epitaxy on partially SiO2-masked Al2O3 insulator crystallized on Si(111) substrates are oriented with the c-axis along the ⟨111⟩ direction of the substrates, but exhibit a random in-plane orientation. A likely reason is the random orientation of the poly-crystalline γ-Al2O3 grains in the Al2O3 layer plane. Magnetic force microscopy studies at room temperature reveal that arrangements of coupled MnAs nanoclusters exhibit a complex magnetic domain structure. Such arrangements of coupled MnAs nanoclusters may also show magnetic random telegraph noise, i.e., jumps between two discrete resistance levels, in a certain temperature range, which can be explained by thermally activated changes of the complex magnetic structure of the nanocluster arrangements.

  12. Neutron scattering and susceptibility measurements on single crystals of ?

    NASA Astrophysics Data System (ADS)

    Coad, S.; Lussier, J.-G.; McMorrow, D. F.; McK Paul, D.

    1996-08-01

    Single-crystal derivatives of the spin - Peierls (S - P) system, 0953-8984/8/34/014/img8, doped with Zn (0.5 to 2.4%) and Ni (1.7 to 6%) have been studied using SQUID magnetometry and neutron scattering. Our study shows that the impurities act to suppress the S - P state and produce a 3D Néel state at low temperatures. A phase diagram is constructed which shows that doping with either Zn (S = 0) or Ni (S = 1) leads to qualitatively similar results: the temperature at which the transition to the S - P state occurs decreases linearly with dopant concentration, whereas the Néel temperature, 0953-8984/8/34/014/img9, initially increases to a maximum at around 4% and then decreases for higher concentrations. These results are discussed with reference to models of defects in 1D spin chains and to earlier experimental work on this system. One difference between the Zn- and Ni-doped samples is that in the Néel state the 0953-8984/8/34/014/img10 moments in the former point along the c-axis, while in the latter they are along the a-axis.

  13. Gas-phase NMR measurements, absolute shielding scales, and magnetic dipole moments of 29Si and 73Ge nuclei.

    PubMed

    Makulski, W; Jackowski, K; Antusek, A; Jaszuński, M

    2006-10-12

    New gas-phase NMR measurements of the shielding constants of 29Si, 73Ge, and 1H nuclei in SiH4 and GeH4 are reported. The results, extrapolated to zero density, provide accurate isolated molecule values, best suited for comparison with theoretical calculations. Using the recent ab initio results for these molecules and the measured chemical shifts, we determine the absolute shielding scales for 29Si and 73Ge. This allows us to provide new values of the nuclear magnetic dipole moments for these two nuclei; in addition, we examine the dipole moments of 13C and 119Sn.

  14. A novel approach to Hugoniot measurements utilizing transparent crystals

    SciTech Connect

    Fratanduono, D. E.; Eggert, J. H.; Akin, M. C.; Chau, R.; Holmes, N. C.

    2013-01-01

    A new absolute equation of state measurement technique is described and demonstrated measuring the shock state and the refractive index of MgO up to 226GPa. This technique utilizes steady shock waves and the high-pressure transparency of MgO under dynamic shock compression and release. Hugoniot measurements performed using this technique are consistent with the previous measurements. A linear dependence of the shocked refractive index and density is observed up to 226GPa, over a magnitude greater in pressure that previous studies. The transparency of MgO along the principal Hugoniot is higher than any other material reported to date. We observe a significant change in the refractive index of MgO as the Hugoniot elastic limit is exceeded due to the transition from uniaxial to hydrostatic strain. Measurements of the elastic-plastic two-wave structure in MgO indicate a nucleation time for plastic deformation.

  15. Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6

    DOE PAGES

    Hadimani, R. L.; Melikhov, Y.; Schlagel, D. L.; Lograsso, T. A.; Dennis, K. W.; McCallum, R. W.; Jiles, D. C.

    2015-01-30

    Gd5(SixGe1–x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6. In this study, we have investigated the first order and second order phase transition temperatures of these samples using magnetic moment vs. temperature and magnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.

  16. Absolute measurement of the effective nonlinearities of KTP and BBO crystals by optical parametric amplification.

    PubMed

    Armstrong, D J; Alford, W J; Raymond, T D; Smith, A V

    1996-04-20

    Absolute magnitudes of the effective nonlinearity, deff, were measured for seven KTP and six BBO crystals. The d(eff), were derived from the parametric gain of an 800-nm signal wave in the sample crystals when they were pumped by the frequency-doubled, spatially filtered light from an injectionseeded, Q-switched Nd:YAG laser. The KTP crystals, all type II phase matched with propagation in the X-Z plane, had d(eff) values ranging from 1.97 to 3.50 pm/V. Measurements of gain as a function of phase velocity mismatch indicate that two of the KTP crystals clearly contain multiple ferroelectric domains. For five type I phase-matched BBO crystals, d(eff) ranged from 1.76 to 1.83 pm/V, and a single type II phase-matched BBO crystal had a d(eff) of 1.56 pm/V. The uncertainty in our measurements of d(eff) values is ±5% for KTP and ±10% for BBO.

  17. Measurement of the parallelism error of a double crystal monochromator by the pencil beam interferometer

    SciTech Connect

    Lim, Jun; Rah, Seungyu

    2005-06-15

    For the precise measurement of the parallelism error between the two crystals in a double crystal monochromator, we suggest a new method that utilizes the pencil beam interferometer. The wave front-splitting pencil beam interferometer was modified, and applied to the measurement. The method overcomes the limitations of the precedent methods that using an autocollimator. Moreover, we can measure the parallelism error continuously through the full scan range with a simple setup. Especially, it should be noted that the angular sensitivity of this method is about 0.07 arcsec rms.

  18. Protein adsorption on surfaces: dynamic contact-angle (DCA) and quartz-crystal microbalance (QCM) measurements.

    PubMed

    Stadler, H; Mondon, M; Ziegler, C

    2003-01-01

    Adsorption of the protein bovine serum albumin (BSA) on gold has been tested at various concentrations in aqueous solution by dynamic contact-angle analysis (DCA) and quartz-crystal microbalance (QCM) measurements. With the Wilhelmy plate technique advancing and receding contact angles and the corresponding hysteresis were measured and correlated with the hydrophilicity and the homogeneity of the surface. With electrical admittance measurements of a gold-coated piezoelectrical quartz crystal, layer mass and viscoelastic contributions to the resonator's frequency shift during adsorption could be separated. A correlation was found between the adsorbed mass and the homogeneity and hydrophilicity of the adsorbed film.

  19. Keggin (K5, H3O)[SiV3W9O40H]·xH2O: Characterization and crystal structure

    NASA Astrophysics Data System (ADS)

    Bonfim, Rodrigo de Paiva Floro; de Moura, Luiza Cristina; Eon, Jean-Guillaume; Mentré, Olivier; Vezin, Hervé; Caldarelli, Stefano

    2014-05-01

    Single crystals of the potassium salt (K5, H3O)[SiV3W9O40H]·xH2O of the vanadium tri-substituted α-Keggin dodecatungstosilicate were prepared and analyzed by vibrational, EPR and 51V NMR spectroscopy. Varying the synthesis conditions allows crystallization of partially reduced anions. The crystal structure was determined for both oxidized (V5+) and partially reduced (V4+/5+) potassium salts. Single crystal X-ray diffraction data and solid state 51V-NMR spectra confirm the occurrence of a single vanadium site in a cubic structure due to rotational disorder of the Keggin ion. Partially reduced compounds crystallize within the same structure as fully oxidized ones. EPR experiments confirm strong interaction of V4+ with two V5+ ions, in accordance with insertion of a V3 subunit into the lacunary Keggin ion as designed in the synthesis method. The 3D-edifice is composed of K+/H2O counter-sublattice with evidence of tunable water occupancy.

  20. Effect of Agitation on Crystallization Behavior of CaO-Al2O3-SiO2-Na2O-CaF2 Mold Fluxes with Varying Basicity

    NASA Astrophysics Data System (ADS)

    Li, Jiangling; Shu, Qifeng; Chou, Kuochih

    2015-08-01

    The effect of agitation on crystallization behaviors of CaO-Al2O3-SiO2-Na2O-CaF2 mold fluxes with basicity of 1.1 and 1.2 was investigated. It was found that crystallization temperatures of agitated samples were higher than those of static samples. The morphology of cuspidine shifted from dendrites to facet crystals with the decrease of temperature. The agitation was conducive to the formation of small dendritic cuspidine and could lead to crystals with smaller size. Crystalline fraction could be significantly enhanced by agitation at the initial stage of crystallization.