Exploring the Time Evolution of Cool Metallic Absorption Features in UV Burst Spectra

NASA Astrophysics Data System (ADS)

Belmes, K.; Madsen, C. A.; DeLuca, E.

2017-12-01

UV bursts are compact brightenings in active regions that appear in UV images. They are identified through three spectroscopic features: (1) broadening and intensification of NUV/FUV emission lines, (2) the presence of optically thin Si IV emission, and (3) the presence of absorption features from cool metallic ions. Properties (2) and (3) imply that bursts exist at transition region temperatures (≥ 80,000 K) but are located in the cooler lower chromosphere ( 5,000 K). Their energetic and dynamical properties remain poorly constrained. Improving our understanding of this phenomena could help us further constrain the energetic and dynamical properties of the chromosphere, as well as give us insight into whether or not UV bursts contribute to chromospheric and/or coronal heating. We analyzed the time evolution of UV bursts using spectral data from the Interface Region Imaging Spectrograph (IRIS). We inspected Si IV 1393.8 Å line profiles for Ni II 1393.3 Å absorption features to look for signs of heating. Weakening of absorption features over time could indicate heating of the cool ions above the burst, implying that thermal energy from the burst could rapidly conduct upward through the chromosphere. To detect the spectral profiles corresponding to bursts, we applied a four-parameter Gaussian fit to every profile in each observation and took cuts in parameter space to isolate the bursts. We then manually reviewed the remaining profiles by looking for a statistically significant appearance of Ni II 1393.3 Å absorption. We quantified these absorption features by normalizing the Si IV 1393.8 Å emission profiles and measuring the maximum fractional extinction in each. Our preliminary results indicate that Ni II 1393.3 Å absorption may undergo a cycle of strengthening and weakening throughout a burst's lifetime. However, further investigation is needed for confirmation. This work is supported by the NSF-REU solar physics program at SAO, grant number AGS-1560313.

Broad absorption line symbiotic stars: highly ionized species in the fast outflow from MWC 560

NASA Astrophysics Data System (ADS)

Lucy, Adrian B.; Knigge, Christian; Sokoloski, J. L.

2018-07-01

In symbiotic binaries, jets and disc winds may be integral to the physics of accretion on to white dwarfs from cool giants. The persistent outflow from symbiotic star MWC 560 (≡V694 Mon) is known to manifest as broad absorption lines (BALs), most prominently at the Balmer transitions. We report the detection of high-ionization BALs from C IV, Si IV, N V, and He II in International Ultraviolet Explorer spectra obtained on 1990 April 29-30, when an optical outburst temporarily erased the obscuring `iron curtain' of absorption troughs from Fe II and similar ions. The C IV and Si IV BALs reached maximum radial velocities at least 1000 km s-1 higher than contemporaneous Mg II and He II BALs; the same behaviours occur in the winds of quasars and cataclysmic variables. An iron curtain lifts to unveil high-ionization BALs during the P Cygni phase observed in some novae, suggesting by analogy a temporary switch in MWC 560 from persistent outflow to discrete mass ejection. At least three more symbiotic stars exhibit broad absorption with blue edges faster than 1500 km s-1; high-ionization BALs have been reported in AS 304 (≡V4018 Sgr), while transient Balmer BALs have been reported in Z And and CH Cyg. These BAL-producing fast outflows can have wider opening angles than has been previously supposed. BAL symbiotics are short-time-scale laboratories for their giga-scale analogues, broad absorption line quasars (BALQSOs), which display a similarly wide range of ionization states in their winds.

Broad absorption line symbiotic stars: highly ionized species in the fast outflow from MWC 560

NASA Astrophysics Data System (ADS)

Lucy, Adrian B.; Knigge, Christian; Sokoloski, J. L.

2018-04-01

In symbiotic binaries, jets and disk winds may be integral to the physics of accretion onto white dwarfs from cool giants. The persistent outflow from symbiotic star MWC 560 (≡V694 Mon) is known to manifest as broad absorption lines (BALs), most prominently at the Balmer transitions. We report the detection of high-ionization BALs from C IV, Si IV, N V, and He II in International Ultraviolet Explorer spectra obtained on 1990 April 29 - 30, when an optical outburst temporarily erased the obscuring `iron curtain' of absorption troughs from Fe II and similar ions. The C IV and Si IV BALs reached maximum radial velocities at least 1000 km s-1 higher than contemporaneous Mg II and He II BALs; the same behaviors occur in the winds of quasars and cataclysmic variables. An iron curtain lifts to unveil high-ionization BALs during the P Cygni phase observed in some novae, suggesting by analogy a temporary switch in MWC 560 from persistent outflow to discrete mass ejection. At least three more symbiotic stars exhibit broad absorption with blue edges faster than 1500 km s-1; high-ionization BALs have been reported in AS 304 (≡V4018 Sgr), while transient Balmer BALs have been reported in Z And and CH Cyg. These BAL-producing fast outflows can have wider opening angles than has been previously supposed. BAL symbiotics are short-timescale laboratories for their giga-scale analogs, broad absorption line quasars (BALQSOs), which display a similarly wide range of ionization states in their winds.

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

NASA Astrophysics Data System (ADS)

Attiaoui, Anis; Wirth, Stephan; Blanchard-Dionne, André-Pierre; Meunier, Michel; Hartmann, J. M.; Buca, Dan; Moutanabbir, Oussama

2018-06-01

Sn-containing Si and Ge (Ge1-y-xSixSny) alloys are an emerging family of semiconductors with the potential to impact group IV material-based devices. These semiconductors provide the ability to independently engineer both the lattice parameter and bandgap, which holds the premise to develop enhanced or novel photonic and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-y-xSixSny layers on the optical properties of Si and Ge based heterostructures and nanowires. We found that by adding a thin Ge1-y-xSixSny capping layer on Si or Ge greatly enhances light absorption especially in the near infrared range, leading to an increase in short-circuit current density. For the Ge1-y-xSixSny structure at thicknesses below 30 nm, a 14-fold increase in the short-circuit current is observed with respect to bare Si. This enhancement decreases by reducing the capping layer thickness. Conversely, decreasing the shell thickness was found to improve the short-circuit current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell nanowires. The optical absorption becomes very important by increasing the Sn content. Moreover, by exploiting an optical antenna effect, these nanowires show extreme light absorption, reaching an enhancement factor, with respect to Si or Ge nanowires, on the order of 104 in Si/Ge0.84Si0.04Sn0.12 and 12 in Ge/Ge0.84Si0.04Sn0.12. Furthermore, we analyzed the optical response after the addition of a dielectric layer of Si3N4 to the Si/Ge1-y-xSixSny core-shell nanowire and found approximatively a 50% increase in the short-circuit current density for a dielectric layer of thickness equal to 45 nm and both a core radius and a shell thickness greater than 40 nm. The core-shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances in the semiconductor part and antireflection effects in the dielectric part.

The very high rotators in the late-B and early-A stars: Shell stars with Si IV and C IV features the case of HD 119921

NASA Technical Reports Server (NTRS)

Freireferrero, R.; Bruhweiler, Frederick C.; Grady, C. A.

1990-01-01

Study of several stars in the late B and early A spectral types shows that very high rotators are associated with shell characteristics (sometimes not detected at all in the visible spectra) and also with C IV and some Si IV spectral absorption features which can be explained by circumstellar phenomena superimposed over stellar metallic blends. These particularities are evidenced by comparison with other spectra of low and high rotators in the same spectral range. HD 119921, a star with similar characteristics to the other ones of the sample, is given special attention. A possible scenario is suggested to explain the observed superionization features.

Ultraviolet studies of nova-like variables with the IUE

NASA Technical Reports Server (NTRS)

Guinan, E. F.

1983-01-01

KQ Mon is a new UX UMa-type nova-like variable. Optical spectra taken in 1978 reveal very shallow Balmer absorption lines and He I (wavelength 4471) absorption. There was no evidence of orbital variations but the appearance of the optical spectrum and the presence of low amplitude flickering suggested a strong similarity to CD-42 degrees 14462 (=V3885 Sgr) and other members of the UX UMa class. KQ Mon was observed at low dispersion with the IUE satellite. Six spectra taken with the short wavelength prime (SWP) camera are dominated by strong broad absorption lines due to N V, O I, Si III, Si IV, C IV, He II, N IV, and A1 III. There is little evidence of orbital phase modulation over the time baseline of the observations. Unlike UV observations of other UX UMa-type objects, KQ Mon exhibits no emission lines or P Cygni-type profiles and the velocity displacements appear to be smaller, suggesting the absence of a hot, high velocity wind characterizing other UX UMa stars. The relationship of KQ Mon to other UX UMa disk stars is discussed and a model is suggested to explain their observed properties and the lack of major outbursts.

Ultraviolet gas absorption and dust extinction toward M8

NASA Technical Reports Server (NTRS)

Boggs, Don; Bohm-Vitense, Erika

1990-01-01

Interstellar absorption lines are analyzed using high-resolution IUE spectra of 11 stars in the young cluster NGC 6530 located in the M8 region. High-velocity clouds at -35 km/s and -60 km/s are seen toward all cluster stars. The components arise in gases that are part of large interstellar bubbles centered on the cluster and driven by stellar winds of the most luminous members. Absorption lines of species of different ionization states are separated in velocity. The velocity stratification is best explained as a 'champagne' flow of ionized gas away from the cluster. The C IV/Si IV ratios toward the hotter cluster members are consistent with simple photoionization models if the gas-phase C/Si ratio is increased by preferential accretion onto dust grains. High ion column densities in the central cluster decline with distance from W93, suggesting that radiation from a hot source near W93 has photoionized gas in the central cluster.

A multi-epoch spectroscopic study of the BAL quasar APM 08279+5255. II. Emission- and absorption-line variability time lags

NASA Astrophysics Data System (ADS)

Saturni, F. G.; Trevese, D.; Vagnetti, F.; Perna, M.; Dadina, M.

2016-03-01

Context. The study of high-redshift bright quasars is crucial to gather information about the history of galaxy assembly and evolution. Variability analyses can provide useful data on the physics of quasar processes and their relation with the host galaxy. Aims: In this study, we aim to measure the black hole mass of the bright lensed BAL QSO APM 08279+5255 at z = 3.911 through reverberation mapping, and to update and extend the monitoring of its C IV absorption line variability. Methods: We perform the first reverberation mapping of the Si IV and C IV emission lines for a high-luminosity quasar at high redshift with the use of 138 R-band photometric data and 30 spectra available over 16 years of observations. We also cross-correlate the C IV absorption equivalent width variations with the continuum light curve to estimate the recombination time lags of the various absorbers and infer the physical conditions of the ionised gas. Results: We find a reverberation-mapping time lag of ~900 rest-frame days for both Si IV and C IV emission lines. This is consistent with an extension of the BLR size-to-luminosity relation for active galactic nuclei up to a luminosity of ~1048 erg s-1, and implies a black hole mass of 1010 M⊙. Additionally, we measure a recombination time lag of ~160 days in the rest frame for the C IV narrow absorption system, which implies an electron density of the absorbing gas of ~2.5 × 104 cm-3. Conclusions: The measured black hole mass of APM 08279+5255 indicates that the quasar resides in an under-massive host-galaxy bulge with Mbulge ~ 7.5MBH, and that the lens magnification is lower than ~8. Finally, the inferred electron density of the narrow-line absorber implies a distance of the order of 10 kpc of the absorbing gas from the quasar, placing it within the host galaxy.

A study of ultraviolet absorption lines through the complete Galactic halo by the analysis of HST faint object spectrograph spectra of active Galactic nuclei, 1

NASA Technical Reports Server (NTRS)

Burks, Geoffrey S.; Bartko, Frank; Shull, J. Michael; Stocke, John T.; Sachs, Elise R.; Burbidge, E. Margaret; Cohen, Ross D.; Junkkarinen, Vesa T.; Harms, Richard J.; Massa, Derck

1994-01-01

The ultraviolet (1150 - 2850 A) spectra of a number of active galactic nuclei (AGNs) observed with the Hubble Space Telescope (HST) Faint Object Spectrograph (FOS) have been used to study the properties of the Galactic halo. The objects that served as probes are 3C 273, PKS 0454-220, Pg 1211+143, CSO 251, Ton 951, and PG 1351+640. The equivalent widths of certain interstellar ions have been measured, with special attention paid to the C IV/C II and Si IV/Si II ratios. These ratios have been intercompared, and the highest values are found in the direction of 3C 273, where C IV/C II = 1.2 and Si IV/Si II greater than 1. These high ratios may be due to a nearby supernova remnant, rather than to ionized gas higher up in the Galactic halo. Our data give some support to the notion that QSO metal-line systems may arise from intervening galaxies which contain high supernova rates, galactic fountains, and turbulent mixing layers.

Broad absorption-line time variability in the QSO CSO 203

NASA Technical Reports Server (NTRS)

Barlow, Thomas A.; Junkkarinen, Vesa T.; Burbidge, E. M.; Weymann, Ray J.; Morris, Simon L.; Korista, Kirk T.

1992-01-01

We present spectroscopy of the BALQSO CSO 203 during four epochs over a 17-month time span. These data show three distinct levels in the broad absorption lines (BALs) of Si IV 1397A and C IV 1549A. We also note possible variations in the N V 1240A and Al III 1857A absorption troughs. A broad-band monitoring effort during this period shows that the continuum level remained constant to within 10 percent. We argue that the triggering mechanism for the absorption-line changes is most likely synchronous with the continuum source photons; however, no correlation with the central source has yet been found. The observed variations are consistent with changes in the ionization level in the broad absorption-line region (BALR). We discuss possible mechanisms for these changes and the implications for the structure of the BALR.

Properties of the +70 kilometers per second cloud toward HD 203664

NASA Technical Reports Server (NTRS)

Sembach, Kenneth R.

1995-01-01

I present high-resolution International Ultraviolet Explorer (IUE) spectra of the ultraviolet absorption in an intermediate-velocity interstellar cloud (nu(sub LSR) approximately equal to +70 km/s) toward HD 203664. The combined, multiple IUE images result in spectra with S/N = 15-40 and resolutions of approximately 20-25 km/s. The intermediate-velocity cloud absorption is present in ultraviolet lines of C II, C II(sup *), C IV, N I, O I, Mg I, Mg II, Al II, Al III, Si II, Si III, Si IV, S II, Cr II, Mn II, Fe II, and Zn II. The relative abundances of low-ionization species suggest an electron density of 0.15-0.34/cu cm and a temperature of 5300-6100 K in the neutral and weakly ionized gas. Given the presence of high-ionization gas tracers such as Si IV and C IV, ionized portions of the cloud probably contribute to the relatively large values of n(sub e) derived from measurements of the lower ionization species. The high-ionization species in the cloud have an abundance ratio, N(C IV)/N(Si IV) approximately equal to 4.5, similar to that inferred for collisionally ionized cloud interfaces at temperatures near 10(exp 5) K along other sight lines. When referenced to sulfur, the abundances of most elements in the cloud are within a factor of 5 of their solar values, which suggests that the +70 km/s gas has a previous origin in the Galactic disk despite a recent determination by Little et al. that the cloud lies at a distance of 200-1500 pc below the Galactic plane. I have checked this result against a model of the ionization for the diffuse ionized gas layer of the Galaxy and find that this conclusion is essentially unchanged as long as the ionization parameter is low as implied by the abundances of adjoining ionization states of aluminum and silicon. The processes responsible for the production of highly ionized gas in the +70 km/s cloud appear to be able to account for the inferred dust grain destruction as well.

Non-aggregated axially disubstituted silicon phthalocyanines bearing electropolymerizable ligands and their aggregation, electropolymerizaton and thermal properties.

PubMed

Biyiklioglu, Zekeriya; Bas, Huseyin; Alp, Hakan

2015-08-21

A novel series of axially disubstituted silicon(iv) phthalocyanines bearing electropolymerizable ligands were designed and synthesized for the first time. The silicon(iv) phthalocyanines were characterized by various spectroscopic techniques as well as elemental analysis. The aggregation behavior of the SiPcs were examined in different solvents and at different concentrations in chloroform. In all the studied solvents and concentrations, the SiPcs were non-aggregated. The thermal behavior of the silicon(iv) phthalocyanines was also studied. The electropolymerization properties of the silicon(iv) phthalocyanines were investigated by cyclic and square wave voltammetry. This study is the first example of the electropolymerization of axially disubstituted silicon phthalocyanines. The type of axial ligand on the phthalocyanine ring did not show any effect on the absorption and thermal properties but influenced the electropolymerization of the phthalocyanines.

The Mean Metal-line Absorption Spectrum of Damped Ly α Systems in BOSS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mas-Ribas, Lluís; Miralda-Escudé, Jordi; Pérez-Ràfols, Ignasi

We study the mean absorption spectrum of the Damped Ly α (DLA) population at z ∼ 2.6 by stacking normalized, rest-frame-shifted spectra of ∼27,000 DLA systems from the DR12 of the Baryon Oscillation Spectroscopic Survey (BOSS)/SDSS-III. We measure the equivalent widths of 50 individual metal absorption lines in five intervals of DLA hydrogen column density, five intervals of DLA redshift, and overall mean equivalent widths for an additional 13 absorption features from groups of strongly blended lines. The mean equivalent width of low-ionization lines increases with N {sub H} {sub i}, whereas for high-ionization lines the increase is much weaker.more » The mean metal line equivalent widths decrease by a factor ∼1.1–1.5 from z ∼ 2.1 to z ∼ 3.5, with small or no differences between low- and high-ionization species. We develop a theoretical model, inspired by the presence of multiple absorption components observed in high-resolution spectra, to infer mean metal column densities from the equivalent widths of partially saturated metal lines. We apply this model to 14 low-ionization species and to Al iii, S iii, Si iii, C iv, Si iv, N v, and O vi. We use an approximate derivation for separating the equivalent width contributions of several lines to blended absorption features, and infer mean equivalent widths and column densities from lines of the additional species N i, Zn ii, C ii*, Fe iii, and S iv. Several of these mean column densities of metal lines in DLAs are obtained for the first time; their values generally agree with measurements of individual DLAs from high-resolution, high signal-to-noise ratio spectra when they are available.« less

Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew; Landini, Barbara

2015-09-28

Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction,more » single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.« less

Quasars with P v broad absorption in BOSS data release 9

NASA Astrophysics Data System (ADS)

Capellupo, D. M.; Hamann, F.; Herbst, H.; Brandt, W. N.; Ge, J.; Pâris, I.; Petitjean, P.; Schneider, D. P.; Streblyanska, A.; York, D.

2017-07-01

Broad absorption lines (BALs) found in a significant fraction of quasar spectra identify high-velocity outflows that might be present in all quasars and could be a major factor in feedback to galaxy evolution. Understanding the nature of these flows requires further constraints on their physical properties, including their column densities, for which well-studied BALs, such as C IV λλ1548,1551, typically provide only a lower limit because of saturation effects. Low-abundance lines, such as P v λλ1118,1128, indicate large column densities, implying that outflows more powerful than measurements of C IV alone would indicate. We search through a sample of 2694 BAL quasars from the Sloan Digital Sky Survey III/Baryon Oscillation Spectroscopic Survey data release 9 quasar catalogue for such absorption, and we identify 81 'definite' and 86 'probable' detections of P v broad absorption, yielding a firm lower limit of 3.0-6.2 per cent for the incidence of such absorption among BAL quasars. The P v-detected quasars tend to have stronger C IV and Si IV absorption, as well as a higher incidence of LoBAL absorption, than the overall BAL quasar population. Many of the P v-detected quasars have C IV troughs that do not reach zero intensity (at velocities where P v is detected), confirming that the outflow gas only partially covers the UV continuum source. P v appears significantly in a composite spectrum of non-P v-detected BAL quasars, indicating that P v absorption (and large column densities) is much more common than indicated by our search results. Our sample of P v detections significantly increases the number of known P v detections, providing opportunities for follow-up studies to better understand BAL outflow energetics.

Rapid ionization of the environment of SN 1987A

NASA Technical Reports Server (NTRS)

Raga, A. C.

1987-01-01

It has been suggested by some authors that IUE observations of the supernova SN 1987A show the presence of a strong component of the interstellar C IV 1550 and Si IV 1393 absorption lines at a velocity that approximately corresponds to the velocity of the LMC. It is possible that this component might come from originally neutral (or at least not very highly ionized) gas which has been photoionized by the initially very strong ionizing radiation field of the supernova. Theoretical considerations of this scenario lead to the study of fast (with velocities of about c) ionization fronts. It is shown that for reasonable model parameters it is possible to obtain considerably large C IV column densities, in agreement with the IUE observations. On the other hand, the models do not so easily predict the large Si IV column densities that are also obtained from the IUE observations. It is found that only models in which the interstellar medium surrounding SN 1987A is initially composed of already ionized hydrogen and helium predict substantial Si IV column densities. This result provides an interesting prediction of the ionization state of the environment of the presupernova star.

Evidence for mass loss at polar latitudes in the Be stars Omega Orionis and 66 Ophiuchi

NASA Technical Reports Server (NTRS)

Peters, G. J.

1982-01-01

IUE observations of the pole-on Be stars Omega Ori and 66 Oph have revealed the unexpected presence of high velocity (-250 to -850 km/sec), relatively narrow (about 1 A) absorption components to the resonance lines of C IV, Si IV, and Si III. The C IV features show structure indicative of multiple shells or clouds. If Omega Ori and 66 Oph are indeed viewed pole-on, then these observations suggest that substantial matter is being ejected from the polar regions of these stars. The nature of these unusual high velocity features, which were not observed in other pole-on Be stars considered in the program, and the column densities and mass loss rates implied by them are discussed in this Letter.

Highly ionized gas in the Gum nebula and elsewhere - A comparison of IUE and Copernicus satellite results

NASA Technical Reports Server (NTRS)

Edgar, Richard J.; Savage, Blair D.

1992-01-01

The data from six high-dispersion IUE echelle spectra are averaged in order to obtain an interstellar absorption line spectrum with an S/N of about 30 and a resolution of about 25 km/s. The interstellar lines of C IV and Si IV are very strong and broad and N V is detected. The profiles for these species and Al III are compared to the Copernicus satellite profiles for O VI. The high ionization lines toward HD 64760 are much stronger and broader than those recorded toward Zeta Pup and Gamma super 2 Vel, the two exciting stars of the Gum nebula. The profiles for Al III and Si IV are similar and considerably narrower than the O VI profile. An origin in photoionized Gum nebula gas is suggested as the most likely explanation for Al III and Si IV. The C IV profile has a high positive velocity wing extending to approximately +80 km/s, which is similar in appearance to the positive velocity portion of the O VI profile. It is inferred that a substantial part of the observed C IV has an origin in the collisionally ionized gas most likely rsponsible for the O VI.

Statistical analysis of solar wind stream interface induced temperature effects on the upper mesosphere and lower thermosphere over SANAE IV, Antarctica

NASA Astrophysics Data System (ADS)

Ogunjobi, Olakunle; Sivakumar, Venkataraman; William; Sivla, T.

Using superposed epoch techniques, the TIMED (Thermosphere Ionosphere Mesosphere Energetic and Dynamics) and NOAA 15-18 (National Oceanic and Atmospheric Administration) satellites measurements are used to examine the response of the polar MLT (Mesosphere and Lower Thermosphere) temperature to energetic electron precipitation during solar wind stream interfaces (SI). We first investigate the relationship between the ionospheric absorption from the ground based riometer and degree of energetic electron precipitation from the MEPED (Medium Energy Proton and Electron Detectors) on board the NOAA satellites. By interpolating the energetic electron measurements from MEPED instruments, we can obtain the electron precipitation rates close in time to the SABER (Sounding of the Atmosphere using Broadband Emission Radiometry) temperature retrieval. Using measurements sorted over the vicinity of SANAE IV (South Africa National Antarctic Expedition IV), we investigate if there are significant temperature effects in the MLT altitude on SI arrival at Earth. The preliminary analysis indicate that there are no temperature increase below 100 km prior to the SI triggered precipitation; whereas a clear temperature increase is observed at 95 km immediately after the SI impact. The analysis on the SI geophysical properties indicates that an enhanced magnetospheric convection resulting to heating could be responsible for the temperature modification on SI arrival.

The extent of chemically enriched gas around star-forming dwarf galaxies

NASA Astrophysics Data System (ADS)

Johnson, Sean

2018-01-01

Supernovae driven winds are often invoked to remove chemically enriched gas from galaxies to match the low metallicities of dwarf galaxies. In such shallow potential wells, outflows may produce massive amounts of enriched halo gas (circum-galactic medium or CGM) and pollute the intergalactic medium (IGM). I will present a survey of the CGM and IGM around 18 star-forming field dwarf galaxies with stellar masses of log M*/M⊙ ≈ 8 ‑ 9 at z ≈ 0.2. Eight of these have CGM probed by quasar absorption spectra at projected distances, d, less than the host virial radius, Rh. Ten are probed at d/Rh = 1 ‑ 3 to study the surrounding IGM. The absorption measurements include neutral hydrogen (H I), the dominant silicon ions for diffuse cool gas (T ∼ 104 K; Si II, Si III, and Si IV), more highly ionized carbon (C IV), and highly ionized oxygen (O VI). The metal absorption from the CGM of the dwarf galaxies is less common and ≈ 4× weaker compared to massive star-forming galaxies though O VI absorption is still common. None of the dwarfs probed at d/Rh = 1 ‑ 3 have definitive metal-line detections. Combining the available silicon ions, we estimate that the cool CGM accounts for only 2 ‑ 6% of the expected silicon budget. CGM absorption from O VI can account for ≈ 8% of the expected oxygen budget. As O VI traces an ion with expected equilibrium ion fractions of 0.2, this highly ionized phase of the CGM may represent a significant metal reservoir even for dwarf galaxies not expected to maintain gravitationally shock heated hot halos.

Synthetic Spectral Ananlysis of the Nova-Like Variable KQ Mon

NASA Astrophysics Data System (ADS)

Wolfe, Aaron; Sion, E.

2011-01-01

KQ Mon is classified as a nova-like variable with an uncertain orbital period of 0.128 d. Optical spectra (Zwitter, T. & Munari, U.1994, A&AS, 107, 503) reveal no emission lines but strong Balmer absorption features. High speed flickering has been observed indicative of accretion. IUE spectra reveal deep absorption lines due to C III, C II, Si III, Si IV, C IV, He II but no P Cygni profiles indicative of outflow. Its classification in Ritter and Kolb (2006) as a UX UMa type nova-like is uncertain. We have carried out the first synthetic spectral analysis of the IUE archival spectra of KQ Mon with realistic accretion disk models with vertical structure and high gravity photosphere models. The results of our model atmosphere and model accretion disk analyses are presented. We discuss the properties that we have derived for KQ Mon and compare KQ Mon with other nova-like variables viewed at low inclination. This work was supported in part by NSF grant AST0807892 to Villanova University.

The onset of Wolf-Rayet wind outflow and the nature of the hot component in the symbiotic nova PU Vulpecula

NASA Technical Reports Server (NTRS)

Sion, Edward M.; Shore, Steven N.; Ready, Christian J.; Scheible, Maureen P.

1993-01-01

We have analyzed temporal variations in the far ultraviolet He II (1640), Si IV (1393, 1402), and C IV (1548, 1550) line profiles in eight high dispersion, International Ultraviolet Explorer Short Wavelength Prime spectra of the symbiotic nova PU Vul by comparatively examining these profiles on a common velocity scale. We see clear evidence of the onset of a Wolf-Rayet-like wind outflow from the bloated, contracting white dwarf hot component with terminal velocity of approximately equals -550 to -600 km/s. We have quantitatively analyzed the complicated He II (1640) emission region for the first time and show that the discrete absorption features seen in the He II region occur at precisely the same velocites in each spectrum, thus demonstrating that the absorbing source is steady and not affected by any orbital motion. We demonstrate that there is an underlying He II wind emission feature whose true shape is hidden by superposed absorption due to the foreground red giant wind flowing in front of the white dwarf and abscuring the white dwarf's wind outflow. We present synthetic spectra of He II emission behind an absorbing slab with u = 20 km/s, T = 5000 K, and column densities in the range N = 1 x 10(exp 22) and 1 x 10(exp 23)/sq cm which explain these absorptions. Our analysis of the Si IV and C IV resonance doublets, in velocity space, reveal temporal variations in the profile between 1987 and 1991 with the emergence of clear P Cygni profiles in Si IV by 1990. A nebular emission feature in C III 1909 also appears in the most recent spectra (e.g., SW42538H) while it was absent or extremely weak in the earliest spectra (e.g., SW36332H), thus strengthening evidence that the nebular emission, as seen in permitted and semiforbidden lines, intensities in step with the onset of the hot, fast, wind outflow. We also report the first detection of narrow interstellar (circumbinary shell?) absorption lines near -1 km/s, most strongly in Al III (1854, 1862) and Si IV (1392, 1402). We have carried out a rough quantitative analysis of the He II wind emission by using the theoretical He II Wolf-Rayet profiles of Hamann & Schmutz (1987). We obtain a lower limit to the He II net emission equivalent width of approximately 1 A, a hot component temperature in the range 25,000 to 35,000 K, a hot component radius in the range 5 solar radius to 30 solar radius, a maximum wind velocity of approximately equals -600 km/s and a rough upper limit to the mass-loss rate of less than 1 x 10(exp -5) solar mass/yr. To our knowledge, this is the first quantitative wind analysis, albeit crude, to be carried out for the hot component of a symbiotic nova or symbiotic variable.

Observations of the interstellar medium with IUE

NASA Technical Reports Server (NTRS)

Jenkins, E. B.

1981-01-01

Limitations of the International Ultraviolet Explorer (IUE) are discussed, as well as improved powers of research in these areas: (1) Si and C IV doublet absorptions in the high dispersion stellar spectra of distant stars; (2) observation of spectra outside the galactic plans; (3) high velocity gas.

EVIDENCE FOR PHOTOIONIZATION-DRIVEN BROAD ABSORPTION LINE VARIABILITY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Tinggui; Yang, Chenwei; Wang, Huiyuan

2015-12-01

We present a qualitative analysis of the variability of quasar broad absorption lines using the large multi-epoch spectroscopic data set of the Sloan Digital Sky Survey Data Release 10. We confirm that variations of absorption lines are highly coordinated among different components of the same ion or the same absorption component of different ions for C iv, Si iv, and N v. Furthermore, we show that the equivalent widths (EWs) of the lines decrease or increase statistically when the continuum brightens or dims. This is further supported by the synchronized variations of emission and absorption-line EWs when the well-established intrinsicmore » Baldwin effect for emission lines is taken into account. We find that the emergence of an absorption component is usually accompanied by the dimming of the continuum while the disappearance of an absorption-line component is accompanied by the brightening of the continuum. This suggests that the emergence or disappearance of a C iv absorption component is only the extreme case, when the ionic column density is very sensitive to continuum variations or the continuum variability the amplitude is larger. These results support the idea that absorption-line variability is driven mainly by changes in the gas ionization in response to continuum variations, that the line-absorbing gas is highly ionized, and in some extreme cases, too highly ionized to be detected in UV absorption lines. Due to uncertainties in the spectroscopic flux calibration, we cannot quantify the fraction of quasars with asynchronized continuum and absorption-line variations.« less

First-principles calculations of phonons and Raman and infrared spectra in Cd-IV-N2 compounds

NASA Astrophysics Data System (ADS)

Lyu, Sai; Lambrecht, Walter R. L.

2018-05-01

A first-principles study of the phonons at the zone center in Cd-IV-N2 compounds is presented with IV = Si, Ge, Sn. The calculations are performed for the most likely Pbn21 crystal structure, after showing that it is indeed lower in total energy compared to the closely related Pmc21 structure. The normal mode frequencies are calculated using density functional perturbation theory and symmetry labeled. The longitudinal optical-transverse optical splittings are determined using the Born effective charges which are also reported. These are used to simulate polarized Raman spectra for different scattering configurations as well as the infrared absorption and reflection spectra. The mode frequencies are found to decrease from Si to Ge to Sn as group-IV cation. The spectra show a wide variety of number of prominent peaks and relative intensities in spite of the great similarities of these three materials. Phonon densities of states and their analysis in atom by atom contributions are also reported.

IUE observations of the atmospheric eclipsing binary system Zeta Aurigae

NASA Technical Reports Server (NTRS)

Champman, R. D.

1980-01-01

IUE observations of the eclipsing binary system Zeta Aurigae made prior to and during the eclipse of the relatively small B8 V star by the cool supergiant star (spectral type K2 II) are reported. Spectral lines produced by the absorption of B star radiation in the atmosphere of the K star during eclipse can be used as a probe of the extended K star atmosphere, due to the negligible cool star continuum in the 1200-3200 A region. Spectra taken prior to eclipse are found to be similar to those of the single B8 V star 64 Ori, with the exception of very strong multi-component absorption lines of Si II, Si IV, C IV and the Mg resonance doublet with strong P Cygni profiles, indicating a double shell. Absorption lines including those corresponding to Al II, Al III, Cr II, Mn II, Fe II, Ni II and Ca II are observed to increase in strength and number as the eclipse progresses, with high-ionization-potential lines formed far from the K star, possibly in a shock wave, and low-ionization potential lines, formed in cool plasma, probably a cool wind, nearer to the K star. Finally, an emission-line spectra with lines corresponding to those previously observed in absorption is noted at the time the B-star continuum had disappeared.

The Extent of Chemically Enriched Gas around Star-forming Dwarf Galaxies

NASA Astrophysics Data System (ADS)

Johnson, Sean D.; Chen, Hsiao-Wen; Mulchaey, John S.; Schaye, Joop; Straka, Lorrie A.

2017-11-01

Supernova driven winds are often invoked to remove chemically enriched gas from dwarf galaxies to match their low observed metallicities. In such shallow potential wells, outflows may produce massive amounts of enriched halo gas (circumgalactic medium, CGM) and pollute the intergalactic medium (IGM). Here, we present a survey of the CGM and IGM around 18 star-forming field dwarfs with stellar masses of {log} {M}* /{M}⊙ ≈ 8{--}9 at z≈ 0.2. Eight of these have CGM probed by quasar absorption spectra at projected distances, d, less than that of the host virial radius, {R}{{h}}. Ten are probed in the surrounding IGM at d/{R}{{h}}=1{--}3. The absorption measurements include neutral hydrogen, the dominant silicon ions for diffuse cool gas (T ˜ 104 K; Si II, Si III, and Si IV), moderately ionized carbon (C IV), and highly ionized oxygen (O VI). Metal absorption from the CGM of the dwarfs is less common and ≈ 4× weaker compared to massive star-forming galaxies, though O VI absorption is still common. None of the dwarfs probed at d/{R}{{h}}=1{--}3 have definitive metal-line detections. Combining the available silicon ions, we estimate that the cool CGM of the dwarfs accounts for only 2%-6% of the expected silicon budget from the yields of supernovae associated with past star formation. The highly ionized O VI accounts for ≈8% of the oxygen budget. As O VI traces an ion with expected equilibrium ion fractions of ≲0.2, the highly ionized CGM may represent a significant metal reservoir even for dwarfs not expected to maintain gravitationally shock heated hot halos.

HST/COS Far-ultraviolet Spectroscopic Analysis of U Geminorum Following a Wide Outburst

NASA Astrophysics Data System (ADS)

Godon, Patrick; Shara, Michael M.; Sion, Edward M.; Zurek, David

2017-12-01

We used the Cosmic Origins Spectrograph (COS) on the Hubble Space Telescope (HST) to obtain a series of four far-ultraviolet (FUV; 915-2148 Å) spectroscopic observations of the prototypical dwarf nova U Geminorum during its cooling following a two-week outburst. Our FUV spectral analysis of the data indicates that the white dwarf (WD) cools from a temperature of ˜41,500 K, 15 days after the peak of the outburst, to ˜36,250 K, 56 days after the peak of the outburst, assuming a massive WD (log(g) = 8.8) and a distance of 100.4 ± 3.7 pc. These results are self-consistent with a ˜1.1 M ⊙ WD with a 5000 ± 200 km radius. The spectra show absorption lines of H I, He II, C II III IV, N III IV, O VI, S IV, Si II III IV, Al III, Ar III, and Fe II, but no emission features. We find suprasolar abundances of nitrogen, confirming the anomalous high N/C ratio. The FUV light curve reveals a ±5% modulation with the orbital phase, showing dips near phases 0.25 and ˜0.75, where the spectra exhibit an increase in the depth of some absorption lines and in particular strong absorption lines from Si II, Al III, and Ar III. The phase dependence we observe is consistent with material overflowing the disk rim at the hot spot, reaching a maximum elevation near phase 0.75, falling back at smaller radii near phase 0.5 where it bounces off the disk surface, and again rising above the disk near phase ˜0.25. There is a large scatter in the absorption lines’ velocities, especially for the silicon lines, while the carbon lines seem to match more closely the orbital velocity of the WD. This indicates that many absorption lines are affected by—or form in—the overflowing stream material veiling the WD, making the analysis of the WD spectra more difficult. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by AURA, Inc., under NASA contract NAS 5-26555.

Vibrationally high-resolved electronic spectra of MCl2 (M=C, Si, Ge, Sn, Pb) and photoelectron spectra of MCl2(.).

PubMed

Ran, Yibin; Pang, Min; Shen, Wei; Li, Ming; He, Rongxing

2016-10-05

We systematically studied the vibrational-resolved electronic spectra of group IV dichlorides using the Franck-Condon approximation combined with the Duschinsky and Herzberg-Teller effects in harmonic and anharmonic frameworks (only the simulation of absorption spectra includes the anharmonicity). Calculated results showed that the band shapes of simulated spectra are in accordance with those of the corresponding experimental or theoretical ones. We found that the symmetric bend mode in progression of absorption is the most active one, whereas the main contributor in photoelectron spectra is the symmetric stretching mode. Moreover, the Duschinsky and anharmonic effects exert weak influence on the absorption spectra, except for PbCl2 molecule. The theoretical insights presented in this work are significant in understanding the photophysical properties of MCl2 (M=C, Si, Ge, Sn, Pb) and studying the Herzberg-Teller and the anharmonic effects on the absorption spectra of new dichlorides of this main group. Copyright © 2016 Elsevier B.V. All rights reserved.

Ultraviolet absorption by highly ionized halo gas near the Galactic center

NASA Technical Reports Server (NTRS)

Savage, B. D.; Massa, D.

1985-01-01

Initial results are presented for a program to survey highly ionized gas in the Milky Way disk and halo. High-resolution IUE (International Ultraviolet Explorer) far-UV spectra were obtained for 12 stars at galactocentric distances less than 6 kpc. The stars are 0.7-2.2 kpc away from the plane. Most of the spectra contain exceedingly strong and broad interstellar absorption lines of weakly and highly ionized atoms. In addition to the normally strong lines of Si IV and C IV, strong interstellar NV lines have been detected in the spectra of eight stars. The detection of NV absorption (amounting to more than 10 times the predicted NV) provides an important new constraint on models for the origin of Galactic halo gas. A Galactic fountain operating in the presence of known UV and EUV radiation might explain the observations.

Far-ultraviolet absorption spectra of quasars: How to find missing hot gas and metals

NASA Technical Reports Server (NTRS)

Verner, D. A.; Tytler, David; Barthel, P. D.

1994-01-01

We show that some high-redshift QSO absorption systems that reveal only the H I Lyman series lines at wavelengths visible from the ground maybe a new class of ultra-high-ionization metal line systems, with metal lines in the far-UV region which is now being explored with satellites. At high temperatures or in intense radiation fields metal systems will not show the usual C IV absorption, and O VI will become the most prominent metal absorber. At still higher ionization, O IV also becomes weak and the strongest metal lines are from Ne VIII, Mg X and Si XII, which have doublets in the rangs 500-800 A. Hence very high ionization metal systems will not show metal lines in existing spectra. Recent X-ray observations show that galaxy halos contain hot gas, so we predict that far-UV spectra of QSOs will also show this gas.

On the nature of the nova-like variable CD-42 deg 14462

NASA Technical Reports Server (NTRS)

Guinan, E. F.; Sion, E. M.

1981-01-01

Low dispersion long and short wavelength IUE spectra of the nova like system CD-42 deg 14462 were obtained on August 24 U.T. The short wave spectrum exhibits absorption features due to C III (lambda 1175), Lalpha 1216), NV (lambda1240), HeII (lambda 1640), SiIV (lambda1394), NIV (lambda1875) with CIV (lambda1550) as a P Cygni feature with blue shifted absorption suggesting the presence of material leaving the system. Possible interpretations of this object are discussed.

A Hubble Space Telescope Survey of Intrinsic Absorption in Nearby AGN

NASA Astrophysics Data System (ADS)

Dashtamirova, Dzhuliya; Dunn, Jay P.; Crenshaw, D. Michael

2017-01-01

We present a survey of the intrinsic UV absorption lines in active galactic nuclei (AGN). We limit our study to the ultraviolet spectra of type 1 AGN with a redshift of z < 0.15 as a continuation of the Dunn et al. (2007, 2008) and Crenshaw et al. (1999) studies of smaller samples. We identify approximately 90 AGN fit our redshift specifications in the Mikulski Archive for Space Telescopes (MAST) database with Cosmic Origin Spectrograph (COS) observations. We download and co-add all of the COS spectra. We find that about 80 of these are type 1 AGN. We normalize the COS spectra and identify all of the intrinsic Lyman-alpha, N V, Si IV, and C IV intrinsic absorption features. From these data, we determine the fraction of type 1 AGN with intrinsic absorption in this redshift range and find the global covering factors of the absorbers. We also identify low ionization species as well as excited state lines. A number of objects have multiple epoch COS and/or Space Telescope Imaging Spectrograph (STIS) observations, which we use to investigate the absorption variability.

More Constraints on the Physical Conditions of the Kinematically Complex, Multiphase Absorption Line System at z=0.93 toward PG1206+459

NASA Astrophysics Data System (ADS)

Rosenwasser, Ben; Muzahid, Sowgat; Norris, Jackson; Charlton, Jane C.

2015-01-01

We present the results of photo- and collisional ionization modeling of the strong MgII absorption system at redshift z~0.93 towards the quasar PG1206+459. This system has been extensively studied over the last two decades (Churchill & Charlton 1999; Ding et al. 2003; Tripp et al. 2011) using a combination of spectra from Keck/HIRES, HST/FOS, HST/STIS, and HST/COS. Here we present newconstraints using the most complete spectral coverage including more recent observations of OVI and the Lyman series from HST/COS. Numerous absorption components are seen over a large velocity spread (~1500km/s), and multiple ionization phases are required to account for the detected transitions, which include MgI, MgII, FeII, SiII, SiIII, SiIV, CII, CIII, CIV, SIII, SIV, SV, SVI, NIII, NIV, NV, OIII, OIV, OV, OVI, and NeVIII. Considering the new constraints, we revisit the question of the physical nature of the structures that produce this absorber.

The Hubble Space Telescope Quasar Absorption Line Key Project: The Unusual Absorption-Line System in the Spectrum of PG 2302+029--Ejected or Intervening?

NASA Technical Reports Server (NTRS)

Jannuzi, B. T.; Hartig, G. F.; Kirhakos, S.; Sargent, W. L. W.; Turnshek, D. A.; Weymann, R. J.; Bahcall, J. N.; Bergeron, J.; Boksenberg, A.; Savage, B. D.;

Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions

NASA Astrophysics Data System (ADS)

Pura, J. L.; Souto, J.; Periwal, P.; Baron, T.; Jiménez, J.

2018-05-01

Semiconductor nanowires are the building blocks of future nanoelectronic devices. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. We carried out experimental measurements through the micro-Raman spectroscopy of different group IV nanowires, both homogeneous Si nanowires and axially heterostructured SiGe/Si nanowires. These experimental measurements show an enhancement of the Raman signal in the vicinity of the heterojunction of SiGe/Si nanowires. The results are analysed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances, and the results are understood as a consequence of a finite change in the relative permittivity of the material at the SiGe/Si heterojunction. This effect opens a path to controlling interactions between light and matter at the nanoscale with direct applications in photonic nanodevices.

High Velocity Absorption during Eta Car B's Periastron Passage

NASA Technical Reports Server (NTRS)

Nielsen, Krister E.; Groh, J. H.; Hillier, J.; Gull, Theodore R.; Owocki, S. P.; Okazaki, A. T.; Damineli, A.; Teodoro, M.; Weigelt, G.; Hartman, H.

2010-01-01

Eta Car is one of the most luminous massive stars in the Galaxy, with repeated eruptions with a 5.5 year periodicity. These events are caused by the periastron passage of a massive companion in an eccentric orbit. We report the VLT/CRIRES detection of a strong high-velocity, (<1900 km/s) , broad absorption wing in He I at 10833 A during the 2009.0 periastron passage. Previous observations during the 2003.5 event have shown evidence of such high-velocity absorption in the He I 10833 transition, allowing us to conclude that the high-velocity gas is crossing the line-of-sight toward Eta Car over a time period of approximately 2 months. Our analysis of HST/STlS archival data with observations of high velocity absorption in the ultraviolet Si IV and C IV resonance lines, confirm the presence of a high-velocity material during the spectroscopic low state. The observations provide direct detection of high-velocity material flowing from the wind-wind collision zone around the binary system, and we discuss the implications of the presence of high-velocity gas in Eta Car during periastron

PROPERTIES OF QSO METAL-LINE ABSORPTION SYSTEMS AT HIGH REDSHIFTS: NATURE AND EVOLUTION OF THE ABSORBERS AND NEW EVIDENCE ON ESCAPE OF IONIZING RADIATION FROM GALAXIES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boksenberg, Alec; Sargent, Wallace L. W., E-mail: boksy@ast.cam.ac.uk

2015-05-15

Using Voigt-profile-fitting procedures on Keck High Resolution Spectrograph spectra of nine QSOs, we identify 1099 C IV absorber components clumped in 201 systems outside the Lyman forest over 1.6 ≲ z ≲ 4.4. With associated Si IV, C II, Si II  and N V where available, we investigate the bulk statistical and ionization properties of the components and systems and find no significant change in redshift for C IV and Si IV while C II, Si II  and N V change substantially. The C IV components exhibit strong clustering, but no clustering is detected for systems on scales from 150 kmmore » s{sup –1} out to 50,000 km s{sup –1}. We conclude that the clustering is due entirely to the peculiar velocities of gas present in the circumgalactic media of galaxies. Using specific combinations of ionic ratios, we compare our observations with model ionization predictions for absorbers exposed to the metagalactic ionizing radiation background augmented by proximity radiation from their associated galaxies and find that the generally accepted means of radiative escape by transparent channels from the internal star-forming sites is spectrally not viable for our stronger absorbers. We develop an active scenario based on runaway stars with resulting changes in the efflux of radiation that naturally enable the needed spectral convergence, and in turn provide empirical indicators of morphological evolution in the associated galaxies. Together with a coexisting population of relatively compact galaxies indicated by the weaker absorbers in our sample, the collective escape of radiation is sufficient to maintain the intergalactic medium ionized over the full range 1.9 < z ≲ 4.4.« less

Constraints on hydrodynamical subgrid models from quasar absorption line studies of the simulated circumgalactic medium

NASA Astrophysics Data System (ADS)

Hummels, Cameron B.; Bryan, Greg L.; Smith, Britton D.; Turk, Matthew J.

2013-04-01

Cosmological hydrodynamical simulations of galaxy evolution are increasingly able to produce realistic galaxies, but the largest hurdle remaining is in constructing subgrid models that accurately describe the behaviour of stellar feedback. As an alternate way to test and calibrate such models, we propose to focus on the circumgalactic medium (CGM). To do so, we generate a suite of adaptive mesh refinement simulations for a Milky-Way-massed galaxy run to z = 0, systematically varying the feedback implementation. We then post-process the simulation data to compute the absorbing column density for a wide range of common atomic absorbers throughout the galactic halo, including H I, Mg II, Si II, Si III, Si IV, C IV, N V, O VI and O VII. The radial profiles of these atomic column densities are compared against several quasar absorption line studies to determine if one feedback prescription is favoured. We find that although our models match some of the observations (specifically those ions with lower ionization strengths), it is particularly difficult to match O VI observations. There is some indication that the models with increased feedback intensity are better matches. We demonstrate that sufficient metals exist in these haloes to reproduce the observed column density distribution in principle, but the simulated CGM lacks significant multiphase substructure and is generally too hot. Furthermore, we demonstrate the failings of inflow-only models (without energetic feedback) at populating the CGM with adequate metals to match observations even in the presence of multiphase structure. Additionally, we briefly investigate the evolution of the CGM from z = 3 to present. Overall, we find that quasar absorption line observations of the gas around galaxies provide a new and important constraint on feedback models.

Evidence for two-loop interaction from IRIS and SDO observations of penumbral brightenings

NASA Astrophysics Data System (ADS)

Alissandrakis, C. E.; Koukras, A.; Patsourakos, S.; Nindos, A.

2017-07-01

Aims: We investigate small scale energy release events which can provide clues on the heating mechanism of the solar corona. Methods: We analyzed spectral and imaging data from the Interface Region Imaging Spectrograph (IRIS), images from the Atmospheric Imaging Assembly (AIA) aboard the Solar Dynamics Observatoty (SDO), and magnetograms from the Helioseismic and Magnetic Imager (HMI) aboard SDO. Results: We report observations of small flaring loops in the penumbra of a large sunspot on July 19, 2013. Our main event consisted of a loop spanning 15'', from the umbral-penumbral boundary to an opposite polarity region outside the penumbra. It lasted approximately 10 min with a two minute impulsive peak and was observed in all AIA/SDO channels, while the IRIS slit was located near its penumbral footpoint. Mass motions with an apparent velocity of 100 km s-1 were detected beyond the brightening, starting in the rise phase of the impulsive peak; these were apparently associated with a higher-lying loop. We interpret these motions in terms of two-loop interaction. IRIS spectra in both the C II and Si iv lines showed very extended wings, up to about 400 km s-1, first in the blue (upflows) and subsequently in the red wing. In addition to the strong lines, emission was detected in the weak lines of Cl I, O I and C I, as well as in the Mg II triplet lines. Absorption features in the profiles of the C II doublet, the Si iv doublet and the Mg II h and k lines indicate the existence of material with a lower source function between the brightening and the observer. We attribute this absorption to the higher loop and this adds further credibility to the two-loop interaction hypothesis. Tilts were detected in the absorption spectra, as well as in the spectra of Cl I, O I, and C I lines, possibly indicating rotational motions from the untwisting of magnetic flux tubes. Conclusions: We conclude that the absorption features in the C II, Si iv and Mg II profiles originate in a higher-lying, descending loop; as this approached the already activated lower-lying loop, their interaction gave rise to the impulsive peak, the very broad line profiles and the mass motions. Movies associated to Figs. A.1-A.3 are available at http://www.aanda.org

Broad absorption line disappearance and emergence using multiple-epoch spectroscopy from the Sloan Digital Sky Survey

NASA Astrophysics Data System (ADS)

McGraw, S. M.; Brandt, W. N.; Grier, C. J.; Filiz Ak, N.; Hall, P. B.; Schneider, D. P.; Anderson, S. F.; Green, P. J.; Hutchinson, T. A.; Macleod, C. L.; Vivek, M.

2017-08-01

We investigate broad absorption line (BAL) disappearance and emergence using a 470 BAL-quasar sample over ≤0.10-5.25 rest-frame years with at least three spectroscopic epochs for each quasar from the Sloan Digital Sky Survey. We identify 14 disappearing BALs over ≤1.73-4.62 rest-frame years and 18 emerging BALs over ≤1.46-3.66 rest-frame years associated with the C IV λλ1548,1550 and/or Si IV λλ1393,1402 doublets, and report on their variability behaviour. BAL quasars in our data set exhibit disappearing/emerging C IV BALs at a rate of 2.3^{+0.9}_{-0.7} and 3.0^{+1.0}_{-0.8} per cent, respectively, and the frequency for BAL to non-BAL quasar transitions is 1.7^{+0.8}_{-0.6} per cent. We detect four re-emerging BALs over ≤3.88 rest-frame years on average and three re-disappearing BALs over ≤4.15 rest-frame years on average, the first reported cases of these types. We infer BAL lifetimes along the line of sight to be nominally ≲ 100-1000 yr using disappearing C IV BALs in our sample. Interpretations of (re-)emerging and (re-)disappearing BALs reveal evidence that collectively supports both transverse-motion and ionization-change scenarios to explain BAL variations. We constrain a nominal C IV/Si IV BAL-outflow location of ≲ 100 pc from the central source and a radial size of ≳ 1× 10-7 pc (0.02 au) using the ionization-change scenario, and constrain a nominal outflow location of ≲ 0.5 pc and a transverse size of ˜0.01 pc using the transverse-motion scenario. Our findings are consistent with previous work, and provide evidence in support of BALs tracing compact flow geometries with small filling factors.

Orbital phase dependent IUE spectra of the nova like binary II Arietis

NASA Technical Reports Server (NTRS)

Guinan, E. F.; Sion, E. M.

1981-01-01

Nine low dispersion IUE spectra of the nova like binary TT Ari over its 3h17m orbital period were obtained. Four short wave spectra and five long wave spectra exhibit marked changes in line strength and continuum shape with orbital phase. The short wave spectra show the presence in absorption of C III, Lyman alpha, SiIII, NV, SiIV, CIV, HeII, AlIII, and NIV. The CIV shows a P Cygni profile on two of the spectra. Implications of these spectra for the nature of nova like variables are discussed.

Bismuth Oxide Nanoparticles Partially Substituted with EuIII, MnIV, and SiIV: Structural, Spectroscopic, and Optical Findings.

PubMed

Ortiz-Quiñonez, José-Luis; Zumeta-Dubé, Inti; Díaz, David; Nava-Etzana, Noel; Cruz-Zaragoza, Epifanio; Santiago-Jacinto, Patricia

2017-03-20

Interest in nanostructured partially substituted bismuth oxides has been increasing over the last years. Research on new synthesis methods, properties, and possible uses for these oxides is needed. The objective of this paper is to synthesize β-Bi 2 O 3 , β-Bi 2 O 3 :Eu 3+ , β-Bi 2 O 3 :Mn 4+ , Bi 12 Bi 0.8 O 19.2 , Bi 12 Bi 0.8 O 19.2 /Li + , Bi 12 MnO 20 , and Bi 12 SiO 20 nanoparticles and to investigate their structural, spectroscopic, and optical changes. Some of the causes that generated their properties are also discussed. These materials are important because the doping or partial substitution of bismuth oxide with these cations (Eu 3+ , Mn 4+ , and Si 4+ ) modifies some properties such as optical absorption, reactivity toward CO 2 , among others. X-ray diffraction (in powders), high-resolution transmission electron microscopy, Fourier transform infrared (FTIR), resonance Raman scattering, diffuse reflectance, and solid-state magic-angle-spinning 29 Si NMR were used for the characterization of the synthesized materials. We found that partial substitution of yellow Bi 12 Bi 0.8 O 19.2 with Mn 4+ and Si 4+ changed the color to green and whitish, respectively. New bands in the Raman scattering and FTIR spectra of these oxides are deeply discussed. Raman scattering spectroscopy was a valuable and reliable technique to detect the Eu 3+ and Mn 4+ cations as dopants in the bismuth oxides. The 29 Si chemical shift (δ) in Bi 12 SiO 20 was -78.16 ppm, whereas in SiO 2 , it was around -110 ppm. This considerable shift in Bi 12 SiO 20 occurred because of an increased shielding of the Si nucleus in the Si(O) 4 tetrahedron. This shielding was provided by the low-electronegativity and highly polarizable Bi cations. The isovalent doping of β-Bi 2 O 3 nanoparticles with Eu 3+ enhanced their thermal stability over 400 °C. Variation in the optical absorption and reactivity toward the acidic CO 2 molecule of the partially substituted bismuth oxides was explained on the basis of the optical basicity and ionic-covalent parameter concepts. Some possible uses for the synthesized oxides are suggested.

Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

PubMed

de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

2017-10-31

Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

β-FeSi II as a Kankyo (environmentally friendly) semiconductor for solar cells in the space application

NASA Astrophysics Data System (ADS)

Makita, Yunosuke; Ootsuka, Teruhisa; Fukuzawa, Yasuhiro; Otogawa, Naotaka; Abe, Hironori; Liu, Zhengxin; Nakayama, Yasuhiko

2006-04-01

β-FeSi II defined as a Kankyo (Environmentally Friendly) semiconductor is regarded as one of the 3-rd generation semiconductors after Si and GaAs. Versatile features about β-FeSi II are, i) high optical absorption coefficient (>10 5cm -1), ii) chemical stability at temperatures as high as 937°C, iii) high thermoelectric power (Seebeck coefficient of k ~ 10 -4/K), iv) a direct energy band-gap of 0.85 eV, corresponding to 1.5μm of quartz optical fiber communication, v) lattice constant nearly well-matched to Si substrate, vi) high resistance against the humidity, chemical attacks and oxidization. Using β-FeSi II films, one can fabricate various devices such as Si photosensors, solar cells and thermoelectric generators that can be integrated basically on Si-LSI circuits. β-FeSi II has high resistance against the exposition of cosmic rays and radioactive rays owing to the large electron-empty space existing in the electron cloud pertinent to β-FeSi II. Further, the specific gravity of β-FeSi II (4.93) is placed between Si (2.33) and GaAs ((5.33). These features together with the aforementioned high optical absorption coefficient are ideal for the fabrication of solar cells to be used in the space. To demonstrate fascinating capabilities of β-FeSi II, one has to prepare high quality β-FeSi II films. We in this report summarize the current status of β-FeSi II film preparation technologies. Modified MBE and facing-target sputtering (FTS) methods are principally discussed. High quality β-FeSi II films have been formed on Si substrates by these methods. Preliminary structures of n-β-FeSi II /p-Si and p-β-FeSi II /n-Si solar cells indicated an energy conversion efficiency of 3.7%, implying that β-FeSi II is practically a promising semiconductor for a photovoltaic device.

Far-ultraviolet Spectroscopy of the Nova-like Variable KQ Monocerotis: A New SW Sextantis Star?

NASA Astrophysics Data System (ADS)

Wolfe, Aaron; Sion, Edward M.; Bond, Howard E.

2013-06-01

New optical spectra obtained with the SMARTS 1.5 m telescope and archival International Ultraviolet Explorer (IUE) far-ultraviolet (FUV) spectra of the nova-like variable KQ Mon are discussed. The optical spectra reveal Balmer lines in absorption as well as He I absorption superposed on a blue continuum. The 2011 optical spectrum is similar to the KPNO 2.1 m IIDS spectrum we obtained 33 years earlier except that the Balmer and He I absorption is stronger in 2011. Far-ultraviolet IUE spectra reveal deep absorption lines due to C II, Si III, Si IV, C IV, and He II, but no P Cygni profiles indicative of wind outflow. We present the results of the first synthetic spectral analysis of the IUE archival spectra of KQ Mon with realistic optically thick, steady-state, viscous accretion-disk models with vertical structure and high-gravity photosphere models. We find that the photosphere of the white dwarf (WD) contributes very little FUV flux to the spectrum and is overwhelmed by the accretion light of a steady disk. Disk models corresponding to a WD mass of ~0.6 M ⊙, with an accretion rate of order 10-9 M ⊙ yr-1 and disk inclinations between 60° and 75°, yield distances from the normalization in the range of 144-165 pc. KQ Mon is discussed with respect to other nova-like variables. Its spectroscopic similarity to the FUV spectra of three definite SW Sex stars suggests that it is likely a member of the SW Sex class and lends support to the possibility that the WD is magnetic.

Line identifications, line strengths, and continuum flux measurements in the ultraviolet spectrum of Arcturus

NASA Technical Reports Server (NTRS)

Carpenter, K. G.; Wing, R. F.; Stencel, R. E.

1985-01-01

The ultraviolet spectrum of Arcturus has been observed at high resolution with the IUE satellite. Line identifications, mean absolute 'continuum' flux measurements, integrated absolute emission-line fluxes, and measurements of selected absorption line strengths are presented for the 2250-2930 A region. In the 1150-2000 A region, identifications are given primarily on the basis of low-resolution spectra. Chromospheric emission lines have been identified with low-excitation species including H I, C I, C II, O I, Mg I, Mg II, Al II, Si I, Si II, S I, and Fe II; there is no evidence for lines of C IV, N V, or other species requiring high temperatures. A search for molecular absorption features in the 2500-2930 A interval has led to several tentative identifications, but only OH could be established as definitely present. Iron lines strongly dominate the identifications in the 2250-2930 A region, Fe II accounting for about 86 percent of the emission features and Fe I for 43 percent of the identified absorption features.

The HST-pNFL program: Mapping the Fluorescent Emission of Galactic Outflows

NASA Astrophysics Data System (ADS)

Heckman, Timothy

2017-08-01

Galactic outflows associated with star formation are believed to play a crucial role in the evolution of galaxies and the IGM. Most of our knowledge about outflows has come from down-the-barrel UV absorption spectroscopy of star-forming galaxies. However, absorption-line data alone provide only indirect information about the radial structure of the gas flows, which introduces large systematic uncertainties in some of the most important quantities, such as the outflow rate, the mass loading factor, and the momentum, metal, and energy fluxes. Recent spectroscopic observations of star-forming galaxies with large (projected physical) apertures have revealed non-resonant (fluorescent) emission in the UV, e.g., FeII* and SiII*, that can be naturally produced by spatially extended emission from the same outflowing material traced in absorption. Encouraged by the most recent observations of FeII* emission by the SDSS-IV/eBOSS survey (Zhu et al. 2015), we propose a pilot program to use narrow-band filter UVIS F280N images to map the extended FeII* 2626 and 2613 fluorescent emission in a carefully-chosen sample of 4 starburst galaxies at z=0.065, and COS G130M to obtain down-the- barrel spectra for SiII absorption and SiII* emission. This HST pilot program can provide unique information about the spatial structure of galactic outflows and can potentially lead to a revolution in our understanding of outflow physics and its impact on galaxies and the IGM.

Effect of Systematic Control of Pd Thickness and Annealing Temperature on the Fabrication and Evolution of Palladium Nanostructures on Si (111) via the Solid State Dewetting.

PubMed

Kunwar, Sundar; Pandey, Puran; Sui, Mao; Zhang, Quanzhen; Li, Ming-Yu; Lee, Jihoon

2017-12-01

Si-based optoelectronic devices embedded with metallic nanoparticles (NPs) have demonstrated the NP shape, size, spacing, and crystallinity dependent on light absorption and emission induced by the localized surface plasmon resonance. In this work, we demonstrate various sizes and configurations of palladium (Pd) nanostructures on Si (111) by the systematic thermal annealing with the variation of Pd thickness and annealing temperature. The evolution of Pd nanostructures are systematically controlled by the dewetting of thin film by means of the surface diffusion in conjunction with the surface and interface energy minimization and Volmer-Weber growth model. Depending on the control of deposition amount ranging between 0.5 and 100 nm at various annealing temperatures, four distinctive regimes of Pd nanostructures are demonstrated: (i) small pits and grain formation, (ii) nucleation and growth of NPs, (iii) lateral evolution of NPs, and (iv) merged nanostructures. In addition, by the control of annealing between 300 and 800 °C, the Pd nanostructures show the evolution of small pits and grains, isolated NPs, and finally, Pd NP-assisted nanohole formation along with the Si decomposition and Pd-Si inter-diffusion. The Raman analysis showed the discrepancies on phonon modes of Si (111) such that the decreased peak intensity with left shift after the fabrication of Pd nanostructures. Furthermore, the UV-VIS-NIR reflectance spectra revealed the existence of surface morphology dependent on absorption, scattering, and reflectance properties.

Effect of Systematic Control of Pd Thickness and Annealing Temperature on the Fabrication and Evolution of Palladium Nanostructures on Si (111) via the Solid State Dewetting

NASA Astrophysics Data System (ADS)

Kunwar, Sundar; Pandey, Puran; Sui, Mao; Zhang, Quanzhen; Li, Ming-Yu; Lee, Jihoon

2017-05-01

Si-based optoelectronic devices embedded with metallic nanoparticles (NPs) have demonstrated the NP shape, size, spacing, and crystallinity dependent on light absorption and emission induced by the localized surface plasmon resonance. In this work, we demonstrate various sizes and configurations of palladium (Pd) nanostructures on Si (111) by the systematic thermal annealing with the variation of Pd thickness and annealing temperature. The evolution of Pd nanostructures are systematically controlled by the dewetting of thin film by means of the surface diffusion in conjunction with the surface and interface energy minimization and Volmer-Weber growth model. Depending on the control of deposition amount ranging between 0.5 and 100 nm at various annealing temperatures, four distinctive regimes of Pd nanostructures are demonstrated: (i) small pits and grain formation, (ii) nucleation and growth of NPs, (iii) lateral evolution of NPs, and (iv) merged nanostructures. In addition, by the control of annealing between 300 and 800 °C, the Pd nanostructures show the evolution of small pits and grains, isolated NPs, and finally, Pd NP-assisted nanohole formation along with the Si decomposition and Pd-Si inter-diffusion. The Raman analysis showed the discrepancies on phonon modes of Si (111) such that the decreased peak intensity with left shift after the fabrication of Pd nanostructures. Furthermore, the UV-VIS-NIR reflectance spectra revealed the existence of surface morphology dependent on absorption, scattering, and reflectance properties.

Shining a light on galactic outflows: photoionized outflows

NASA Astrophysics Data System (ADS)

Chisholm, John; Tremonti, Christy A.; Leitherer, Claus; Chen, Yanmei; Wofford, Aida

2016-04-01

We study the ionization structure of galactic outflows in 37 nearby, star-forming galaxies with the Cosmic Origins Spectrograph on the Hubble Space Telescope. We use the O I, Si II, Si III, and Si IV ultraviolet absorption lines to characterize the different ionization states of outflowing gas. We measure the equivalent widths, line widths, and outflow velocities of the four transitions, and find shallow scaling relations between them and galactic stellar mass and star formation rate. Regardless of the ionization potential, lines of similar strength have similar velocities and line widths, indicating that the four transitions can be modelled as a comoving phase. The Si equivalent width ratios (e.g. Si IV/Si II) have low dispersion, and little variation with stellar mass; while ratios with O I and Si vary by a factor of 2 for a given stellar mass. Photoionization models reproduce these equivalent width ratios, while shock models under predict the relative amount of high ionization gas. The photoionization models constrain the ionization parameter (U) between -2.25 < log (U) < -1.5, and require that the outflow metallicities are greater than 0.5 Z⊙. We derive ionization fractions for the transitions, and show that the range of ionization parameters and stellar metallicities leads to a factor of 1.15-10 variation in the ionization fractions. Historically, mass outflow rates are calculated by converting a column density measurement from a single metal ion into a total hydrogen column density using an ionization fraction, thus mass outflow rates are sensitive to the assumed ionization structure of the outflow.

Variability of the broad absorption lines in the QSO UM 232

NASA Technical Reports Server (NTRS)

Barlow, Thomas A.; Junkkarinen, Vesa T.; Burbidge, E. Margaret

1989-01-01

Low-resolution spectra of UM 232 taken in 1978, 1979, and 1988 at Lick Observatory are presented. Large changes in the Si IV lambda 1397, CIV lambda 1549, and Al III lambda 1857 broad absorption lines are apparent. The decrease in column density in all three ions and an observed brightening of the QSO suggests that these changes are due to an increase in the ionization level driven by an increase in the central source luminosity. This mechanism has been proposed by Smith and Penston to explain small changes in the absorption spectrum of the QSO 1246-057. The spectra of UM 232 show that the fractional decrease in optical depth is smaller at higher outflow velocies. The structure of the broad absorption-line region (BALR) is investigted by estimating an ionization parameter for each ion species as a function of velocity.

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

NASA Astrophysics Data System (ADS)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

THE STRUCTURE OF THE CIRCUMGALACTIC MEDIUM OF GALAXIES: COOL ACCRETION INFLOW AROUND NGC 1097

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowen, David V.; Jenkins, Edward B.; Chelouche, Doron

We present Hubble Space Telescope far-UV spectra of four QSOs whose sightlines pass through the halo of NGC 1097 at impact parameters of ρ = 48–165 kpc. NGC 1097 is a nearby spiral galaxy that has undergone at least two minor merger events, but no apparent major mergers, and is relatively isolated with respect to other nearby bright galaxies. This makes NGC 1097 a good case study for exploring baryons in a paradigmatic bright-galaxy halo. Ly α absorption is detected along all sightlines and Si iii λ 1206 is found along the three sightlines with the smallest ρ ; metalmore » lines of C ii, Si ii, and Si iv are only found with certainty toward the innermost sightline. The kinematics of the absorption lines are best replicated by a model with a disk-like distribution of gas approximately planar to the observed 21 cm H i disk, which is rotating more slowly than the inner disk, and into which gas is infalling from the intergalactic medium. Some part of the absorption toward the innermost sightline may arise either from a small-scale outflow or from tidal debris associated with the minor merger that gives rise to the well known “dog-leg” stellar stream that projects from NGC 1097. When compared to other studies, NGC 1097 appears to be a “typical” absorber, although the large dispersion in absorption line column density and equivalent width in a single halo goes perhaps some way toward explaining the wide range of these values seen in higher- z studies.« less

Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors

NASA Astrophysics Data System (ADS)

Augel, L.; Fischer, I. A.; Dunbar, L. A.; Bechler, S.; Berrier, A.; Etezadi, D.; Hornung, F.; Kostecki, K.; Ozdemir, C. I.; Soler, M.; Altug, H.; Schulze, J.

2016-03-01

Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.

Successive ion layer adsorption and reaction (SILAR) technique synthesis of Al(III)-8-hydroxy-5-nitrosoquinolate nano-sized thin films: characterization and factors optimization.

PubMed

Haggag, Sawsan M S; Farag, A A M; Abdel Refea, M

2013-02-01

Nano Al(III)-8-hydroxy-5-nitrosoquinolate [Al(III)-(HNOQ)(3)] thin films were synthesized by the rapid, direct, simple and efficient successive ion layer adsorption and reaction (SILAR) technique. Thin film formation optimized factors were evaluated. Stoichiometry and structure were confirmed by elemental analysis and FT-IR. The particle size (27-71 nm) was determined using scanning electron microscope (SEM). Thermal stability and thermal parameters were determined by thermal gravimetric analysis (TGA). Optical properties were investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence. Refractive index, n, and absorption index, k, were determined. Spectral behavior of the absorption coefficient in the intrinsic absorption region revealed a direct allowed transition with 2.45 eV band gap. The current-voltage (I-V) characteristics of [Al(III)-(HNOQ)(3)]/p-Si heterojunction was measured at room temperature. The forward and reverse I-V characteristics were analyzed. The calculated zero-bias barrier height (Φ(b)) and ideality factor (n) showed strong bias dependence. Energy distribution of interface states (N(ss)) was obtained. Copyright © 2012 Elsevier B.V. All rights reserved.

Space Telescope and Optical Reverberation Mapping Project: Unraveling the Broad Line Region and the Intrinsic Absorption in NGC 5548

NASA Astrophysics Data System (ADS)

Kriss, G.; Storm Team

2015-07-01

The Space Telescope and Optical Reverberation Mapping (STORM) project monitored the Seyfert 1 galaxy NGC 5548 over a six-month period, obtaining 171 far-ultraviolet HST/COS spectra at approximately daily intervals. We find significant correlated variability in the continuum and broad emission lines, with amplitudes ranging from a factor of two in the emission lines to a factor of three in the continuum. The variations of all the strong emission lines lag behind those of the continuum, with He II lagging by ˜ 2.5 days and Ly&alpha,; C IV, and Si IV lagging by 5 to 6 days. The broad UV absorption lines discovered by Kaastra et al. (2014) and associated with the new soft X-ray obscurer are continuously present in the STORM campaign COS spectra. Their strength varies with the degree of soft X-ray obscuration as revealed by the Swift X-ray spectra. The narrow absorption lines associated with the historical warm absorber varied in response to the changing UV flux on a daily basis with lags of 3 to 8 days. The ionization response allows precise determinations of the locations, mass flux, and kinetic luminosities of the absorbers.

Comparison of antibacterial activities of Ag@TiO2 and Ag@SiO2 core-shell nanoparticles

NASA Astrophysics Data System (ADS)

Dhanalekshmi, K. I.; Meena, K. S.

2014-07-01

Core-shell type Ag@TiO2 nanoparticles were prepared by one pot simultaneous reduction of AgNO3 and hydrolysis of Ti (IV) isopropoxide and Ag@SiO2 core-shell nanoparticles were prepared by Stober's method. They were characterized by absorption, XRD, and HR-TEM techniques. XRD patterns show the presence of anatase form of TiO2 and amorphous form of SiO2 and the noble metal (Ag). High resolution transmission electron microscopy measurements revealed that their size is below 50 nm. The antibacterial properties of Ag@TiO2 and Ag@SiO2 core-shell nanoparticles against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) were examined by the agar diffusion method. As a result E. coli and S. aureus were shown to be substantially inhibited by Ag@TiO2 and Ag@SiO2 core-shell nanoparticles. These results demonstrated that TiO2 and SiO2 supported on the surface of Ag NPs without aggregation was proved to have enhanced antibacterial activity.

Comparison of antibacterial activities of Ag@TiO2 and Ag@SiO2 core-shell nanoparticles.

PubMed

Dhanalekshmi, K I; Meena, K S

2014-07-15

Core-shell type Ag@TiO2 nanoparticles were prepared by one pot simultaneous reduction of AgNO3 and hydrolysis of Ti (IV) isopropoxide and Ag@SiO2 core-shell nanoparticles were prepared by Stober's method. They were characterized by absorption, XRD, and HR-TEM techniques. XRD patterns show the presence of anatase form of TiO2 and amorphous form of SiO2 and the noble metal (Ag). High resolution transmission electron microscopy measurements revealed that their size is below 50 nm. The antibacterial properties of Ag@TiO2 and Ag@SiO2 core-shell nanoparticles against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) were examined by the agar diffusion method. As a result E. coli and S. aureus were shown to be substantially inhibited by Ag@TiO2 and Ag@SiO2 core-shell nanoparticles. These results demonstrated that TiO2 and SiO2 supported on the surface of Ag NPs without aggregation was proved to have enhanced antibacterial activity. Copyright © 2014 Elsevier B.V. All rights reserved.

The Influence of the Photoionizing Radiation Spectrum on Metal-Line Ratios in Ly(alpha) Forest Clouds

NASA Technical Reports Server (NTRS)

Giroux, Mark L.; Shull, J. Michael

1997-01-01

Recent measurements of Si IV/C IV ratios in the high-redshift Ly(alpha) forest (Songaila & Cowie, AJ, 112, 335 (1996a); Savaglio et at., A&A (in press) (1997)) have opened a new window on chemical enrichment and the first generations of stars. However, the derivation of accurate Si/C abundances requires reliable ionization corrections, which are strongly dependent on the spectral shape of the metagalactic ionizing background and on the 'local effects' of hot stars in nearby galaxies. Recent models have assumed power-law quasar ionizing backgrounds plus a decrement at 4 Ryd to account for He II attenuation in intervening clouds. However, we show that realistic ionizing backgrounds based on cosmological radiative transfer models produce more complex ionizing spectra between 1-5 Ryd that are critical to interpreting ions of Si and C. We also make a preliminary investigation of the effects of He II ionization front nonoverlap. Because the attenuation and reemission by intervening clouds enhance Si IV relative to C the observed high Si IV/C IV ratios do not require an unrealistic Si overproduction (Si/C greater than or equal to 3 (Si/C)(solar mass)). If the ionizing spectrum is dominated by 'local effects' from massive stars, even larger Si IV/C IV ratios are possible. However, unless stellar radiation dominates quasars by more than a factor of 10, we confirm the evidence for some Si overproduction by massive stars; values Si/C approx. 2(Si/C)(solar mass) fit the measurements better than solar abundances. Ultimately, an adequate interpretation of the ratios of C IV, Si IV, and C II may require hot, collisionally ionized gas in a multiphase medium.

Photo-induced intersubband absorption in {Si}/{SiGe} quantum wells

NASA Astrophysics Data System (ADS)

Boucaud, P.; Gao, L.; Visocekas, F.; Moussa, Z.; Lourtioz, J.-M.; Julien, F. H.; Sagnes, I.; Campidelli, Y.; Badoz, P.-A.; Vagos, P.

1995-12-01

We have investigated photo-induced intersubband absorption in the valence band of {Si}/{SiGe} quantum wells. Carriers are optically generated in the quantum wells using an argon ion laser. The resulting infrared absorption is probed with a step-scan Fourier transform infrared spectrometer. The photo-induced infrared absorption in SiGe quantum wells is dominated by two contributions: the free carrier absorption, which is similar to bulk absorption in a uniformly doped SiGe layer, and the valence subband absorption in the quantum wells. Both p- and s-polarized intersubband absorptions are measured. We have observed that the photo-induced intersubband absorption in doped samples is shifted to lower energy as compared to direct intersubband absorption. This absorption process is attributed to carriers away from the Brillouin zone center. We show that the photo-induced technique is appropriate to study valence band mixing effects and their influence on intersubband absorption.

Aligned metal absorbers and the ultraviolet background at the end of reionization

NASA Astrophysics Data System (ADS)

Doughty, Caitlin; Finlator, Kristian; Oppenheimer, Benjamin D.; Davé, Romeel; Zackrisson, Erik

2018-04-01

We use observations of spatially aligned C II, C IV, Si II, Si IV, and O I absorbers to probe the slope and intensity of the ultraviolet background (UVB) at z ˜ 6. We accomplish this by comparing observations with predictions from a cosmological hydrodynamic simulation using three trial UVBs applied in post-processing: a spectrally soft, fluctuating UVB calculated using multifrequency radiative transfer; a soft, spatially uniform UVB; and a hard, spatially uniform `quasars-only' model. When considering our paired high-ionization absorbers (C IV/Si IV), the observed statistics strongly prefer the hard, spatially uniform UVB. This echoes recent findings that cosmological simulations generically underproduce strong C IV absorbers at z > 5. A single low/high ionization pair (Si II/Si IV), by contrast, shows a preference for the HM12 UVB, whereas two more (C II/C IV and O I/C IV) show no preference for any of the three UVBs. Despite this, future observations of specific absorbers, particularly Si IV/C IV, with next-generation telescopes probing to lower column densities should yield tighter constraints on the UVB.

Properties of QSO Metal-line Absorption Systems at High Redshifts: Nature and Evolution of the Absorbers and New Evidence on Escape of Ionizing Radiation from Galaxies

NASA Astrophysics Data System (ADS)

Boksenberg, Alec; Sargent, Wallace L. W.

2015-05-01

Using Voigt-profile-fitting procedures on Keck High Resolution Spectrograph spectra of nine QSOs, we identify 1099 C IV absorber components clumped in 201 systems outside the Lyman forest over 1.6 <~ z <~ 4.4. With associated Si IV, C II, Si II and N V where available, we investigate the bulk statistical and ionization properties of the components and systems and find no significant change in redshift for C IV and Si IV while C II, Si II and N V change substantially. The C IV components exhibit strong clustering, but no clustering is detected for systems on scales from 150 km s-1 out to 50,000 km s-1. We conclude that the clustering is due entirely to the peculiar velocities of gas present in the circumgalactic media of galaxies. Using specific combinations of ionic ratios, we compare our observations with model ionization predictions for absorbers exposed to the metagalactic ionizing radiation background augmented by proximity radiation from their associated galaxies and find that the generally accepted means of radiative escape by transparent channels from the internal star-forming sites is spectrally not viable for our stronger absorbers. We develop an active scenario based on runaway stars with resulting changes in the efflux of radiation that naturally enable the needed spectral convergence, and in turn provide empirical indicators of morphological evolution in the associated galaxies. Together with a coexisting population of relatively compact galaxies indicated by the weaker absorbers in our sample, the collective escape of radiation is sufficient to maintain the intergalactic medium ionized over the full range 1.9 < z <~ 4.4. The data presented herein were obtained at the W. M. Keck Observatory, which is operated as a scientific partnership among the California Institute of Technology, the University of California, and the National Aeronautics and Space Administration. The Observatory was made possible by the generous financial support of the W. M. Keck Foundation.

Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles.

PubMed

Sun, Hui; Wu, Hsuan-Chung; Chen, Sheng-Chi; Ma Lee, Che-Wei; Wang, Xin

2017-12-01

Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investigated. The results show that all the NiSi/Si films and AlSi/Si films possess higher absorption ability compared to a pure a-Si film (60 nm). After annealing from 400 to 600 °C under vacuum for 1 h, the Si layer remains amorphous in both NiSi/Si films and AlSi/Si films, while the NiSi layer crystallizes into NiSi 2 phase, whereas Al atoms diffuse through the whole film during the annealing process. Consequently, with increasing the annealing temperature, the optical absorption of NiSi/Si films increases, while that of AlSi/Si films obviously degrades.

Accurate spectroscopic redshift of the multiply lensed quasar PSOJ0147 from the Pan-STARRS survey

NASA Astrophysics Data System (ADS)

Lee, C.-H.

2017-09-01

Context. The gravitational lensing time delay method provides a one-step determination of the Hubble constant (H0) with an uncertainty level on par with the cosmic distance ladder method. However, to further investigate the nature of the dark energy, a H0 estimate down to 1% level is greatly needed. This requires dozens of strongly lensed quasars that are yet to be delivered by ongoing and forthcoming all-sky surveys. Aims: In this work we aim to determine the spectroscopic redshift of PSOJ0147, the first strongly lensed quasar candidate found in the Pan-STARRS survey. The main goal of our work is to derive an accurate redshift estimate of the background quasar for cosmography. Methods: To obtain timely spectroscopically follow-up, we took advantage of the fast-track service programme that is carried out by the Nordic Optical Telescope. Using a grism covering 3200-9600 Å, we identified prominent emission line features, such as Lyα, N V, O I, C II, Si IV, C IV, and [C III] in the spectra of the background quasar of the PSOJ0147 lens system. This enables us to determine accurately the redshift of the background quasar. Results: The spectrum of the background quasar exhibits prominent absorption features bluewards of the strong emission lines, such as Lyα, N V, and C IV. These blue absorption lines indicate that the background source is a broad absorption line (BAL) quasar. Unfortunately, the BAL features hamper an accurate determination of redshift using the above-mentioned strong emission lines. Nevertheless, we are able to determine a redshift of 2.341 ± 0.001 from three of the four lensed quasar images with the clean forbidden line [C III]. In addition, we also derive a maximum outflow velocity of 9800 km s-1 with the broad absorption features bluewards of the C IV emission line. This value of maximum outflow velocity is in good agreement with other BAL quasars.

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

NASA Technical Reports Server (NTRS)

Rajakarunanayake, Yasantha; Mcgill, Tom C.

1990-01-01

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

CGM-GRB: A survey of the CircumGalactic Medium around GRB hosts

NASA Astrophysics Data System (ADS)

Gatkine, Pradip; Veilleux, Sylvain; Cucchiara, Antonino; Cenko, Bradley

2018-01-01

Recent space- and ground-based studies of the circumgalactic medium around galaxies have revealed the dynamic interplay between the galaxy ecosystem and surrounding CGM using bright background quasars. Here, we extend this investigation of the CGM to higher redshifts by using the bright afterglows of gamma-ray bursts as background sources. This provides a unique opportunity to probe the host galaxy ISM and its surrounding CGM together. We compiled a sample of 25 high-resolution (R > 8000) and high-quality (typical S/N ~ 20) rest-frame UV spectra of GRB afterglows with a redshift range (1.5 < z < 5.9) obtained using Keck-HIRES, VLT-UVES, and VLT-X-shooter spectrographs. We fit multi-component Voigt profiles to several absorption lines of both high-ionization (O VI, C IV, Si IV, etc) and low-ionization species (Si II, C II, Fe II, etc) to extract the column densities (N), Doppler parameters (b) and line-centroids. The preliminary results of our analysis on the kinematics and physical properties of the ISM and CGM of these GRB hosts are presented here.

On the Importance of the Nonequilibrium Ionization of Si IV and O IV and the Line of Sight in Solar Surges

NASA Astrophysics Data System (ADS)

Nóbrega-Siverio, D.; Moreno-Insertis, F.; Martínez-Sykora, J.

2018-05-01

Surges are ubiquitous cool ejections in the solar atmosphere that often appear associated with transient phenomena like UV bursts or coronal jets. Recent observations from the Interface Region Imaging Spectrograph show that surges, although traditionally related to chromospheric lines, can exhibit enhanced emission in Si IV with brighter spectral profiles than for the average transition region (TR). In this paper, we explain why surges are natural sites to show enhanced emissivity in TR lines. We performed 2.5D radiative-MHD numerical experiments using the Bifrost code including the nonequilibrium (NEQ) ionization of silicon and oxygen. A surge is obtained as a by-product of magnetic flux emergence; the TR enveloping the emerged domain is strongly affected by NEQ effects: assuming statistical equilibrium would produce an absence of Si IV and O IV ions in most of the region. Studying the properties of the surge plasma emitting in the Si IV λ1402.77 and O IV λ1401.16 lines, we find that (a) the timescales for the optically thin losses and heat conduction are very short, leading to departures from statistical equilibrium, and (b) the surge emits in Si IV more and has an emissivity ratio of Si IV to O IV larger than a standard TR. Using synthetic spectra, we conclude the importance of line-of-sight effects: given the involved geometry of the surge, the line of sight can cut the emitting layer at small angles and/or cross it multiple times, causing prominent, spatially intermittent brightenings in both Si IV and O IV.

The Loopy Ultraviolet Line Profiles of RU Lupi: Accretion, Outflows, and Fluorescence

NASA Astrophysics Data System (ADS)

Herczeg, Gregory J.; Walter, Frederick M.; Linsky, Jeffrey L.; Gahm, Gösta F.; Ardila, David R.; Brown, Alexander; Johns-Krull, Christopher M.; Simon, Michal; Valenti, Jeff A.

2005-06-01

We present far-ultraviolet (FUV) spectra of the classical T Tauri star RU Lup covering the 912-1710 Å spectral range, as observed by the Hubble Space Telescope STIS and the Far Ultraviolet Spectroscopic Explorer satellite. We use these spectra, which are rich in emission and absorption lines, to probe both the accreting and outflowing gas. Absorption in the Lyα profile constrains the extinction to AV~0.07 mag, which we confirm with other diagnostics. We estimate a mass accretion rate of (5+/-2)×10-8 Msolar yr-1 using the optical-NUV accretion continuum. The accreting gas is also detected in bright, broad lines of C IV, Si IV, and N V, which all show complex structures across the line profile. Many other emission lines, including those of H2 and Fe II, are pumped by Lyα. RU Lup's spectrum varies significantly in the FUV; our STIS observations occurred when RU Lup was brighter than several other observations in the FUV, possibly because of a high mass accretion rate.

Measurement of the absorption cross sections of SiCl4, SiCl3, SiCl2 and Cl at H Lyman-α wavelength

NASA Astrophysics Data System (ADS)

Mével, R.; Catoire, L.; Fikri, M.; Roth, P.

2013-03-01

Atomic resonance absorption spectroscopy coupled with a shock tube is a powerful technique for studying high temperature dynamics of reactive systems. Presently, high temperature pyrolysis of SiCl4-Ar mixtures has been studied behind reflected shock waves. Using time-resolved absorption profiles at 121.6 nm and a detailed reaction model, the absorption cross sections of SiCl, SiCl, SiCl and Cl have been measured. Results agree well with available data for SiCl and constitute, to our knowledge, the first measurements for SiCl, SiCl and Cl at the Lyman-α wavelength. These data are relevant to silica particle production from SiCl-oxidant mixtures combustion synthesis.

Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes on silicon for mid-infrared photonic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallagher, J. D.; Xu, C.; Menéndez, J.

This paper reports initial the demonstration of prototype Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge{sub 1−x−y}Si{sub x}Sn{sub y}/p-Ge(Sn/Si)] using ultra low-temperature (T < 300 °C) depositions of the highly reactive chemical sources Si{sub 4}H{sub 10}, Ge{sub 4}H{sub 10}, Ge{sub 3}H{sub 8}, and SnD{sub 4}. The Sn content in the i-Ge{sub 1−x−y}Si{sub x}Sn{sub y} layer was varied from ∼3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigatemore » the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge{sub 1−y}Sn{sub y} counterparts. These findings-combined with the enhanced thermal stability of Ge{sub 1−x−y}Si{sub x}Sn{sub y} relative to Ge{sub 1−y}Sn{sub y} and the observation that ternary alloy disorder does not adversely affect the emission properties—indicate that Ge{sub 1−x−y}Si{sub x}Sn{sub y} may represent a practical target system for future generations of group-IV light sources on Si.« less

THE CURIOUS CASE OF THE ALPHA PERSEI CORONA: A DWARF IN SUPERGIANT'S CLOTHING?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayres, Thomas R., E-mail: Thomas.Ayres@Colorado.edu

2011-09-10

Alpha Persei (HD 20902: F5 Iab) is a luminous, nonvariable supergiant located at the blue edge of the Cepheid instability strip. It is one of the brightest coronal X-ray sources in the young open cluster bearing its name, yet warm supergiants as a class generally avoid conspicuous high-energy activity. The Cosmic Origins Spectrograph on the Hubble Space Telescope has recently uncovered additional oddities. The 1290-1430 A far-ultraviolet (FUV) spectrum of {alpha} Per is dominated by photospheric continuum emission, with numerous superposed absorption features, mainly stellar. However, the normal proxies of coronal activity, such as the Si IV 1400 A doubletmore » (T {approx} 8 x 10{sup 4} K), are very weak, as are the chromospheric C II 1335 A multiplet (T {approx} 3 x 10{sup 4} K) and O I 1305 A triplet. In fact, the Si IV features of {alpha} Per are not only narrower than those of later, G-type supergiants of similar L{sub X}/L{sub bol}, but are also fainter (in L{sub SiIV}/L{sub bol}) by two orders of magnitude. Further, a reanalysis of the ROSAT pointing on {alpha} Per finds the X-ray centroid offset from the stellar position by 9'', at a moderate level of significance. The FUV and X-ray discrepancies raise the possibility that the coronal source might be unrelated to the supergiant, perhaps an accidentally close dwarf cluster member; heretofore unrecognized in the optical, lost in the glare of the bright star.« less

Synthesis of Ge-nanoparticles in organic solution

NASA Astrophysics Data System (ADS)

Pugsley, Andrew James

Much interest is focused on the synthesis of semiconductor particles from organic solution, in order to provide luminescent tracers for biological assays. However, group IV semiconductors have been largely neglected be cause of the lack of suitable nanoparticle formation reactions by solution-phase chemistries. A potentially useful new route to solution-based synthesis of nanocrystalline-Si,Ge involves the reaction between Zintl phases (NaSi, Mg 2Ge) that formally contain anionic semiconducting group species (Si-, Ge4-) and liquid phase SiCU, GeCU, etc. Luminescent nanoparticles formed by these reactions in organic solvents (e.g. diglyme) have been decribed in work from the Kauzlarich group at UC Davis (California, USA). The aim of this project has been to characterise the structural chemistry and luminescent properties of the products of the reaction, as well as following the course of the reaction in situ via synchrotron measurements. The product of the reaction has been characterised by TEM and x-ray absorption spectroscopy as well as other techniques. In order to analyse the x-ray absorption spectroscopy data, a number of model compounds have been studied, including the precursor material which was previously uncharacterised by this technique. An in situ reaction cell has been designed and built and used at a number of synchrotron beamlines to follow the course of the reaction. It has been found that the presence of even low concentrations of water can greatly affect the formation reaction, this is described herein.

Shining a light on star formation driven outflows: the physical conditions within galactic outflows

NASA Astrophysics Data System (ADS)

Chisholm, John P.; Tremonti, Christina A.; Leitherer, Claus; Wofford, Aida; Chen, Yanmei

2016-01-01

Stellar feedback drives energy and momentum into the surrounding gas, which drives gas and metals out of galaxies through a galactic outflow. Unfortunately, galactic outflows are difficult to observe and characterize because they are extremely diffuse, and contain gas at many different temperatures. Here we present results from a sample of 37 nearby (z < 0.27) star forming galaxies observed in the ultraviolet with the Cosmic Origins Spectrograph on the Hubble Space Telescope. The sample covers over three decades in stellar mass and star formation rate, probing different morphologies such as dwarf irregulars and high-mass merging systems. Using four different UV absorption lines (O I, Si II, Si III and Si IV) that trace a wide range of temperatures (ionization potentials between 13.6 eV and 45 eV), we find shallow correlations between the outflow velocity or the equivalent width of absorption lines with stellar mass or star formation rate. Absorption lines probing different temperature phases have similar centroid velocities and line widths, indicating that they are comoving. Using the equivalent width ratios of the four different transitions, we find the ratios to be consistent with photo-ionized outflows, with moderately strong ionization parameters. By constraining the ionization mechanism we model the ionization fractions for each transition, but find the ionization fractions depend crucially on input model parameters. The shallow velocity scalings imply that low-mass galaxies launch outflows capable of escaping their galactic potential, while higher mass galaxies retain all of their gas, unless they undergo a merger.

Theoretical Prediction of Si 2–Si 33 Absorption Spectra

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Li -Zhen; Lu, Wen -Cai; Qin, Wei

Here, the optical absorption spectra of Si 2–Si 33 clusters were systematically studied by a time-dependent density functional theory approach. The calculations revealed that the absorption spectrum becomes significantly broad with increasing cluster size, stretching from ultraviolet to the infrared region. The absorption spectra are closely related to the structural motifs. With increasing cluster size, the absorption intensity of cage structures gradually increases, but the absorption curves of the prolate and the Y-shaped structures are very sensitive to cluster size. If the transition energy reaches ~12 eV, it is noted that all the clusters have remarkable absorption in deep ultravioletmore » region of 100–200 nm, and the maximum absorption intensity is ~100 times that in the visible region. Further, the optical responses to doping in the Si clusters were studied.« less

Theoretical Prediction of Si 2–Si 33 Absorption Spectra

DOE PAGES

Zhao, Li -Zhen; Lu, Wen -Cai; Qin, Wei; ...

2017-07-07

Here, the optical absorption spectra of Si 2–Si 33 clusters were systematically studied by a time-dependent density functional theory approach. The calculations revealed that the absorption spectrum becomes significantly broad with increasing cluster size, stretching from ultraviolet to the infrared region. The absorption spectra are closely related to the structural motifs. With increasing cluster size, the absorption intensity of cage structures gradually increases, but the absorption curves of the prolate and the Y-shaped structures are very sensitive to cluster size. If the transition energy reaches ~12 eV, it is noted that all the clusters have remarkable absorption in deep ultravioletmore » region of 100–200 nm, and the maximum absorption intensity is ~100 times that in the visible region. Further, the optical responses to doping in the Si clusters were studied.« less

Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application

NASA Astrophysics Data System (ADS)

AlMaiyaly, BushraK H.; Hussein, Bushra H.; Shaban, Auday H.

2018-05-01

Different thicknesses (150 250 and 350) ±20 nm has been deposited on the glass substrate and nSi wafer to fabricate ZnTe/n-Si heterojunction solar cell by vacuum evaporation technique Structural optical electrical and photovoltaic properties are investigated for the samples. The structural characteristics studied via X ray analyses indicated that the films are polycrystalline besides having a cubic (zinc blende) structure also average diameter and surface roughness calculated from AFM images The optical measurements of the deposited films were performed in different thicknesses to determine the transmission spectrum as a function of incident wavelength in the range of wavelength (4001000) nm and the optical energy gap calculated from the optical absorption spectra was found to reduse with thickness The IV characteristic at (dark and illuminated) and CV measurement for ZnTe/n-Si heterojunction shows the good rectifying behaviour under dark condition. The measurements of opencircuit voltage (VOC) short-circuit current density (JSC) fill factor (FF) and quantum fficiencies of the ZnTe/n-Si heterojunction are calculated for all samples The results of these studies are presented and discussed in this paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heckman, Timothy; Borthakur, Sanchayeeta; Wild, Vivienne

We report on observations made with the Cosmic Origins Spectrograph (COS) on the Hubble Space Telescope ( HST ) using background quasi-stellar objects to probe the circum-galactic medium (CGM) around 17 low-redshift galaxies that are undergoing or have recently undergone a strong starburst (the COS-Burst program). The sightlines extend out to roughly the virial radius of the galaxy halo. We construct control samples of normal star-forming low-redshift galaxies from the COS/ HST archive that match the starbursts in terms of galaxy stellar mass and impact parameter. We find clear evidence that the CGM around the starbursts differs systematically compared tomore » the control galaxies. The Ly α , Si iii, C iv, and possibly O vi absorption lines are stronger as a function of impact parameter, and the ratios of the equivalent widths of C iv/Ly α and Si iii/Ly α are both higher than in normal star-forming galaxies. We also find that the widths and the velocity offsets (relative to v {sub sys}) of the Ly α absorption lines are significantly larger in the CGM of the starbursts, implying velocities of the absorbing material that are roughly twice the halo virial velocity. We show that these properties can be understood as a consequence of the interaction between a starburst-driven wind and the preexisting CGM. These results underscore the importance of winds driven from intensely star-forming galaxies in helping drive the evolution of galaxies and the intergalactic medium. They also offer a new probe of the properties of starburst-driven winds and of the CGM itself.« less

Results of the IRIS UV Burst Survey, Part I: Active Regions Tracked Limb to Limb

NASA Astrophysics Data System (ADS)

Madsen, C. A.; DeLuca, E.

2017-12-01

We present results from the first phase of an effort to thoroughly characterize UV bursts within the Interface Region Imaging Spectrograph (IRIS) data catalogue. The observational signatures of these phenomena include dramatically intensified and broadened NUV/FUV emission line profiles with absorption features from cool metallic ions. These properties suggest that UV bursts originate from plasma at transition region temperatures (≥ 80,000 K) which is deeply embedded in the cool lower chromosphere ( 5,000 K). Rigorously characterizing the energetic and dynamical properties of UV bursts is crucial since they have considerable potential to heat active region chromospheres and could provide critical constraints for models of magnetic reconnection in these regions. The survey first focuses on IRIS observations of active regions tracked from limb to limb. All observations consist of large field-of-view raster scans of 320 or 400 steps each, which allow for widespread detection of many burst profiles at the expense of having limited short-term time evolution information. We detect bursts efficiently by applying a semi-automated single-Gaussian fitting technique to Si IV 1393.8 Å emission profiles that isolates the distinct burst population in a 4-D parameter space. The robust sample of NUV/FUV burst spectra allows for precise constraints of properties critical for modeling reconnection in the chromosphere, including outflow kinetic energy, density estimates from intensity ratios of Si IV 1402.8 Å and O IV 1401.2 Å emission lines, and coincident measures of emission in other wavelengths. We also track burst properties throughout the lifetimes of their host active regions, noting changes in detection rate and preferential location as the active regions evolve. Finally, the tracked active region observations provide a unique opportunity to investigate line-of-sight effects on observed UV burst spectral properties, particularly the strength of Ni II 1393.3 Å absorption, a feature that may be important in identifying the upward conduction of burst thermal energy through the chromosphere.

A search for the cause of cyclical wind variability in O stars. Simultaneous UV and optical observations including magnetic field measurements of the O7.5III star xi Persei

NASA Astrophysics Data System (ADS)

de Jong, J. A.; Henrichs, H. F.; Kaper, L.; Nichols, J. S.; Bjorkman, K.; Bohlender, D. A.; Cao, H.; Gordon, K.; Hill, G.; Jiang, Y.; Kolka, I.; Morrison, N.; Neff, J.; O'Neal, D.; Scheers, B.; Telting, J. H.

2001-03-01

We present the results of an extensive observing campaign on the O7.5 III star xi Persei. The UV observations were obtained with the International Ultraviolet Explorer. xi Per was monitored continuously in October 1994 during 10 days at ultraviolet and visual wavelengths. The ground-based optical observations include magnetic field measurements, Hα and He I lambda 6678 spectra, and were partially covered by photometry and polarimetry. We describe a method to automatically remove the variable contamination of telluric lines in the groundbased spectra. The aim of this campaign was to search for the origin of the cyclical wind variability in this star. We determined a very accurate period of 2.086(2) d in the resonance lines of Si Iv and in the subordinate N Iv and Hα line profiles. The epochs of maximum absorption in the UV resonance lines due to discrete absorption components (DACs) coincide in phase with the maxima in blue-shifted Hα absorption. This implies that the periodic variability originates close to the stellar surface. The phase-velocity relation shows a maximum at -1400 km s-1. The general trend of these observations can be well explained by the corotating interaction region (CIR) model. In this model the wind is perturbed by one or more fixed patches on the stellar surface, which are most probably due to small magnetic field structures. Our magnetic field measurements gave, however, only a null-detection with a 1sigma errorbar of 70 G in the longitudinal component. Some observations are more difficult to fit into this picture. The 2-day period is not detected in the photospheric/transition region line He I lambda 6678. The dynamic spectrum of this line shows a pattern indicating the presence of non-radial pulsation, consistent with the previously reported period of 3.5 h. The edge variability around -2300 km s-1 in the saturated wind lines of C Iv and N V is nearly identical to the edge variability in the unsaturated Si Iv line, supporting the view that this type of variability is also due to the moving DACs. A detailed analysis using Fourier reconstructions reveals that each DAC actually consists of 2 different components: a ``fast'' and a ``slow'' one which merge at higher velocities. Based on observations obtained using the International Ultraviolet Explorer, collected at NASA Goddard Space Flight Center and Villafranca Satellite Tracking Station of the European Space Agency.

Hubble Space Telescope STIS Observations of the Wolf-Rayet Star HD 5980 in the Small Magellanic Cloud. II. The Interstellar Medium Components

NASA Astrophysics Data System (ADS)

Koenigsberger, Gloria; Georgiev, Leonid; Peimbert, Manuel; Walborn, Nolan R.; Barbá, Rodolfo; Niemela, Virpi S.; Morrell, Nidia; Tsvetanov, Zlatan; Schulte-Ladbeck, Regina

2001-01-01

Observations of the interstellar and circumstellar absorption components obtained with the Hubble Space Telescope Space Telescope Imaging Spectrograph (STIS) along the line of sight toward the Wolf-Rayet-luminous blue variable (LBV) system HD 5980 in the Small Magellanic Cloud are analyzed. Velocity components from C I, C I*, C II, C II*, C IV, N I, N V, O I, Mg II, Al II, Si II, Si II*, Si III, Si IV, S II, S III, Fe II, Ni II, Be I, Cl I, and CO are identified, and column densities estimated. The principal velocity systems in our data are (1) interstellar medium (ISM) components in the Galactic disk and halo (Vhel=1.1+/-3, 9+/-2 km s-1) (2) ISM components in the SMC (Vhel=+87+/-6, +110+/-6, +132+/-6, +158+/-8, +203+/-15 km s-1) (3) SMC supernova remnant SNR 0057-7226 components (Vhel=+312+/-3, +343+/-3, +33, +64 km s-1) (4) circumstellar (CS) velocity systems (Vhel=-1020, -840, -630, -530, -300 km s-1) and (5) a possible system at -53+/-5 km s-1 (seen only in some of the Si II lines and marginally in Fe II) of uncertain origin. The supernova remnant SNR 0057-7226 has a systemic velocity of +188 km s-1, suggesting that its progenitor was a member of the NGC 346 cluster. Our data allow estimates to be made of Te~40,000 K, ne~100 cm-3, N(H)~(4-12)×1018 cm-2 and a total mass between 400 and 1000 Msolar for the supernova remnant (SNR) shell. We detect C I absorption lines primarily in the +132 and +158 km s-1 SMC velocity systems. As a result of the LBV-type eruptions in HD 5980, a fast-wind/slow-wind circumstellar interaction region has appeared, constituting the earliest formation stages of a windblown H II bubble surrounding this system. Variations over a timescale of 1 year in this circumstellar structure are detected. Based on observations with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555.

Applying contact to individual silicon nanowires using a dielectrophoresis (DEP)-based technique

NASA Astrophysics Data System (ADS)

Leiterer, Christian; Broenstrup, Gerald; Jahr, Norbert; Urban, Matthias; Arnold, Cornelia; Christiansen, Silke; Fritzsche, Wolfgang

2013-05-01

One major challenge for the technological use of nanostructures is the control of their electrical and optoelectronic properties. For that purpose, extensive research into the electrical characterization and therefore a fast and reliable way of contacting these structures are needed. Here, we report on a new, dielectrophoresis (DEP)-based technique, which enables to apply sufficient and reliable contact to individual nanostructures, like semiconducting nanowires (NW), easily and without the need for lithography. The DEP contacting technique presented in this article can be done without high-tech equipment and monitored in situ with an optical microscope. In the presented experiments, individual SiNWs are trapped and subsequently welded between two photolithographically pre-patterned electrodes by applying varying AC voltages to the electrodes. To proof the quality of these contacts, I-V curves, photoresponse and photoconductivity of a single SiNW were measured. Furthermore, the measured photoconductivity in dependence on the wavelength of illuminated light and was compared with calculations predicting the absorption spectra of an individual SiNW.

SimBAL: A Spectral Synthesis Approach to Analyzing Broad Absorption Line Quasar Spectra

NASA Astrophysics Data System (ADS)

Terndrup, Donald M.; Leighly, Karen; Gallagher, Sarah; Richards, Gordon T.

2017-01-01

Broad Absorption Line quasars (BALQSOs) show blueshifted absorption lines in their rest-UV spectra, indicating powerful winds emerging from the central engine. These winds are essential part of quasars: they can carry away angular momentum and thus facilitate accretion through a disk, they can distribute chemically-enriched gas through the intergalactic medium, and they may inject kinetic energy to the host galaxy, influencing its evolution. The traditional method of analyzing BALQSO spectra involves measuring myriad absorption lines, computing the inferred ionic column densities in each feature, and comparing with the output of photonionization models. This method is inefficient and does not handle line blending well. We introduce SimBAL, a spectral synthesis fitting method for BALQSOs, which compares synthetic spectra created from photoionization model results with continuum-normalized observed spectra using Bayesian model calibration. We find that we can obtain an excellent fit to the UV to near-IR spectrum of the low-redshift BALQSO SDSS J0850+4451, including lines from diverse ionization states such as PV, CIII*, SIII, Lyalpha, NV, SiIV, CIV, MgII, and HeI*.

Fast variations in the ultraviolet resonance lines of Alpha Camelopardalis (O9.5 Ia) - Evidence for blobs in the wind

NASA Technical Reports Server (NTRS)

Lamers, Henry J. G. L. M.; Snow, Theodore P.; De Jager, Cornelis; Langerwerf, A.

1988-01-01

The 72 IUE spectra of Alpha Cam and 19 IUE spectra of Kappa Cas, obtained during 72 hours of continuous IUE time in September 1978 were searched for variations in the profiles of the resonance lines of Si IV, C IV, and N V, and the results are discussed. The UV resonance lines in the spectra of Alpha Cam showed variations at the 2 percent level near -1800, -700, and +700 km/s. The first two variations can be explained by absorption components of outward-accelerated blobs or shells with an average acceleration of 1.5 cm/sq s. The characteristics of the blobs and shells are discussed, including the column densities and masses. No variations were found in the spectra of Kappa Cas.

Catalog of far-ultraviolet objective-prism spectrophotometry: Skylab experiment S-019, ultraviolet steller astronomy

NASA Technical Reports Server (NTRS)

Henize, K. G.; Wray, J. D.; Parsons, S. B.; Benedict, G. F.

1979-01-01

Ultraviolet stellar spectra in the wavelength region from 1300 to 5000 A (130 to 500) were photographed during the three manned Skylab missions using a 15 cm aperture objective-prism telescope. The prismatic dispersion varied from 58 A mm/1 at 1400 A to 1600 A mm/1 at 3000 A. Approximately 1000 spectra representing 500 stars were measured and reduced to observed fluxes. About 100 stars show absorption lines of Si IV, C IV, or C II. Numerous line features are also recorded in supergiant stars, shell stars, A and F stars, and Wolf-Rayet stars. Most of the stars in the catalog are of spectral class B, with a number of O and A type stars and a sampling of WC, WN, F and C type stars. Spectrophotometric results are tabulated for these 500 stars.

Polarized electronic absorption spectra of Cr2SiO4 single crystals

NASA Astrophysics Data System (ADS)

Furche, A.; Langer, K.

Polarized electronic absorption spectra, E∥a(∥X), E∥b(∥Y) and E∥c(∥Z), in the energy range 3000-5000 cm-1 were obtained for the orthorhombic thenardite-type phase Cr2SiO4, unique in its Cr2+-allocation suggesting some metal-metal bonding in Cr2+Cr2+ pairs with Cr-Cr distance 2.75 Å along [001]. The spectra were scanned at 273 and 120 K on single crystal platelets ∥(100), containing optical Y and Z, and ∥(010), containing optical X and Z, with thicknesses 12.3 and 15.6 μm, respectively. Microscope-spectrometric techniques with a spatial resolution of 20 μm and 1 nm spectral resolution were used. The orientations were obtained by means of X-ray precession photographs. The xenomorphic, strongly pleochroic crystal fragments (X deeply greenish-blue, Y faint blue almost colourless, Z deeply purple almost opaque) were extracted from polycrystalline Cr2SiO4, synthesized at 35 kbar, above 1440 °C from high purity Cr2O3, Cr (10% excess) and SiO2 in chromium capsules. The Cr2SiO4-phase was identified by X-ray diffraction (XRD). Four strongly polarized bands, at about 13500 (I), 15700 (II), 18700 (III) and 19700 (IV) cm-1, in the absorption spectra of Cr2SiO4 single crystals show properties (temperature behaviour of linear and integral absorption coefficients, polarization behaviour, molar absorptivities) which are compatible with an assignment to localized spin-allowed transitions of Cr2+ in a distorted square planar coordination of point symmetry C2. The crystal field parameter of Cr2+ is estimated to be 10 Dq =10700 cm-1. A relatively intense, sharp band at 18400 cm-1 and three other minor features can, from their small half widths, be assigned to spin-forbidden dd-transitions of Cr2+. The intensity of such bands strongly decreases on decreasing temperature. The large half widths, near 5000 cm-1 of band III are indicative of some Cr-Cr interactions, i.e. δ-δ* transitions of Cr24+, whereas the latter alone would be in conflict with the strong polarization of bands I and II parallel [100]. Therefore, it is concluded that the spectra obtained can best be interpreted assuming both dd-transitions of localized d-electrons at Cr2+ as well as δ-δ* transitions of Cr24+ pairs with metal-metal interaction. To explain this, a dynamic exchange process 2 Crloc2+⇔Cr2, cpl4+ is suggested wherein the half life times of the ground states of both exchanging species are significantly longer than those of the respective optically excited states, such that the spectra show both dd- and δ-δ*-transitions.

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells

DOE PAGES

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey; ...

2017-11-10

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p–n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generatemore » and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Thus, findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells.« less

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p–n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generatemore » and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Thus, findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells.« less

Searching for the UV counterpart of the extraordinary X-ray UFO in the NLSy1 IRAS17020+4544

NASA Astrophysics Data System (ADS)

Krongold, Yair

2017-08-01

We recently reported the first unambiguous discovery in high resolution X-ray data of an ultra fast outflow (UFO) with velocity .1c. This wind, in Narrow Line Seyfert 1 galaxy IRAS17020+4544, represents so far the most compelling detection of an UFO, with many different absorption lines that give rise to very high significance detections. The charge states that form the wind clearly indicate a large range of ionization states in the gas, and significant absorption by Ly alpha, C IV, Si IV and N V (among other ions) is expected in the UV band. The goal of our proposed program is to observe an characterize the best X-ray detected UFO in the UV. These observations are crucial to study in great detail the UFO phenomenon, and understand its nature and its relation to the narrow absorption line low velocity systems. Only through detection of Ly alpha absorption in the UV data, measurements of the metallicity of these winds will be possible. The proposed program will help guide new theoretical models of UFOs origins, beyond the simple actual picture that predicts only very high ionization Fe absorption. UV data are required to understand the wind nature and launching mechanism (whether due to radiation pressure via line or continuum opacity, or magnetic forces). Fully characterizing the wind properties will put stronger constraints in the mass outflow and kinetic outflow rates of these systems, as well as in their geometry. Such estimates will give a much clearer picture of UFOs feedback potential, and will provide clues on the feedback mode in action (e.g. energy conserving vs. momentum conserving).

Narrow C IV absorption doublets on quasar spectra of the Baryon Oscillation Spectroscopic Survey

NASA Astrophysics Data System (ADS)

Chen, Zhi-Fu; Gu, Qiu-Sheng; Zhou, Luwenjia; Chen, Yan-Mei

2016-11-01

In this paper, we extend our work of Papers I and II, which are assigned to systematically survey C IV λλ1548,1551 narrow absorption lines (NALs) with zabs ≪ zem on quasar spectra of the Baryon Oscillation Spectroscopic Survey (BOSS) to collect C IV NALs with zabs ≈ zem from blue to red wings of C IV λ1549 emission lines. Together with Papers I and II, we have collected a total number of 41 479 C IV NALs with 1.4544 ≤ zabs ≤ 4.9224 in surveyed spectral region redward of Lyα until red wing of C IV λ1549 emission line. We find that the stronger C IV NALs tend to be the more saturated absorptions, and associated systems (zabs ≈ zem) seem to have larger absorption strengths when compared to intervening ones (zabs ≪ zem). The redshift density evolution behaviour of absorbers (the number of absorbers per redshift path) is similar to the history of the cosmic star formation. When compared to the quasar-frame velocity (β) distribution of Mg II absorbers, the β distribution of C IV absorbers is broader at β ≈ 0, shows longer extended tail, and exhibits a larger dispersion for environmental absorptions. In addition, for associated C IV absorbers, we find that low-luminosity quasars seem to exhibit smaller β and stronger absorptions when compared to high-luminosity quasars.

Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques

PubMed Central

Limaye, Mukta V.; Chen, S. C.; Lee, C. Y.; Chen, L. Y.; Singh, Shashi B.; Shao, Y. C.; Wang, Y. F.; Hsieh, S. H.; Hsueh, H. C.; Chiou, J. W.; Chen, C. H.; Jang, L. Y.; Cheng, C. L.; Pong, W. F.; Hu, Y. F.

2015-01-01

The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2− (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2− species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2−, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples. PMID:26098075

The Correlated Variations of {\\rm{C}}\\,{\\rm{IV}} Narrow Absorption Lines and Quasar Continuum

NASA Astrophysics Data System (ADS)

Chen, Zhi-Fu; Pang, Ting-Ting; He, Bing; Huang, Yong

2018-06-01

We assemble 207 variable quasars from the Sloan Digital Sky Survey, all with at least 3 observations, to analyze C IV narrow absorption doublets, and obtain 328 C IV narrow absorption line systems. We find that 19 out of 328 C IV narrow absorption line systems were changed by | {{Δ }}{W}rλ 1548| ≥slant 3{σ }{{Δ }{W}rλ 1548} on timescales from 15.9 to 1477 days at rest-frame. Among the 19 obviously variable C IV systems, we find that (1) 14 systems have relative velocities {\\upsilon }r> 0.01c and 4 systems have {\\upsilon }r> 0.1c, where c is the speed of light; (2) 13 systems are accompanied by other variable C IV systems; (3) 9 systems were changed continuously during multiple observations; and (4) 1 system with {\\upsilon }r = 16,862 km s‑1 was enhanced by {{Δ }}{W}rλ 1548=2.7{σ }{{Δ }{W}rλ 1548} in 0.67 day at rest-frame. The variations of absorption lines are inversely correlated with the changes in the ionizing continuum. We also find that large variations of C IV narrow absorption lines are form differently over a short timescale.

An HST/COS legacy survey of high-velocity ultraviolet absorption in the Milky Way's circumgalactic medium and the Local Group

NASA Astrophysics Data System (ADS)

Richter, P.; Nuza, S. E.; Fox, A. J.; Wakker, B. P.; Lehner, N.; Ben Bekhti, N.; Fechner, C.; Wendt, M.; Howk, J. C.; Muzahid, S.; Ganguly, R.; Charlton, J. C.

2017-11-01

Context. The Milky Way is surrounded by large amounts of diffuse gaseous matter that connects the stellar body of our Galaxy with its large-scale Local Group (LG) environment. Aims: To characterize the absorption properties of this circumgalactic medium (CGM) and its relation to the LG we present the so-far largest survey of metal absorption in Galactic high-velocity clouds (HVCs) using archival ultraviolet (UV) spectra of extragalactic background sources. The UV data are obtained with the Cosmic Origins Spectrograph (COS) onboard the Hubble Space Telescope (HST) and are supplemented by 21 cm radio observations of neutral hydrogen. Methods: Along 270 sightlines we measure metal absorption in the lines of Si II, Si III, C II, and C iv and associated H I 21 cm emission in HVCs in the velocity range | vLSR | = 100-500 km s-1. With this unprecedented large HVC sample we were able to improve the statistics on HVC covering fractions, ionization conditions, small-scale structure, CGM mass, and inflow rate. For the first time, we determine robustly the angular two point correlation function of the high-velocity absorbers, systematically analyze antipodal sightlines on the celestial sphere, and compare the HVC absorption characteristics with that of damped Lyman α absorbers (DLAs) and constrained cosmological simulations of the LG (CLUES project). Results: The overall sky-covering fraction of high-velocity absorption is 77 ± 6 percent for the most sensitive ion in our survey, Si III, and for column densities log N(Si III)≥ 12.1. This value is 4-5 times higher than the covering fraction of 21 cm neutral hydrogen emission at log N(H I)≥ 18.7 along the same lines of sight, demonstrating that the Milky Way's CGM is multi-phase and predominantly ionized. The measured equivalent-width ratios of Si II, Si III, C II, and C iv are inhomogeneously distributed on large and small angular scales, suggesting a complex spatial distribution of multi-phase gas that surrounds the neutral 21 cm HVCs. We estimate that the total mass and accretion rate of the neutral and ionized CGM traced by HVCs is MHVC ≥ 3.0 × 109M⊙ and dMHVC/dt ≥ 6.1 M⊙ yr-1, where the Magellanic Stream (MS) contributes with more than 90 percent to this mass/mass-flow. If seen from an external vantage point, the Milky Way disk plus CGM would appear as a DLA that would exhibit for most viewing angles an extraordinary large velocity spread of Δv ≈ 400-800 km s-1, a result of the complex kinematics of the Milky Way CGM that is dominated by the presence of the MS. We detect a velocity dipole of high-velocity absorption at low/high galactic latitudes that we associate with LG gas that streams to the LG barycenter. This scenario is supported by the gas kinematics predicted from the LG simulations. Conclusions: Our study confirms previous results, indicating that the Milky Way CGM contains sufficient gaseous material to feed the Milky Way disk over the next Gyr at a rate of a few solar masses per year, if the CGM gas can actually reach the MW disk. We demonstrate that the CGM is composed of discrete gaseous structures that exhibit a large-scale kinematics together with small-scale variations in physical conditions. The MS clearly dominates both the cross section and mass flow of high-velocity gas in the Milky Way's CGM. The possible presence of high-velocity LG gas underlines the important role of the local cosmological environment in the large-scale gas-circulation processes in and around the Milky Way. Based on observations obtained with the NASA/ESA Hubble Space Telescope, which is operated by the Space Telescope Science Institute (STScI) for the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS5D26555.Full Tables A.1, A.2, and A.4 are available at the CDS via anonymous ftp to http://cdsarc.u-strasbg.fr (http://130.79.128.5) or via http://cdsarc.u-strasbg.fr/viz-bin/qcat?J/A+A/607/A48

Structural and thermochemical Aspects of (III-V)IV3 Material Assembly from First Principles

NASA Astrophysics Data System (ADS)

Chizmeshya, Andrew; Kouvetakis, John

2014-03-01

Alloys with (III-V)-(IV) compositions, including Si3(AlP), Si5-2y(AlP)y, Si3Al(As1-xNx), Si5-2yAl(P1-xNx)y and Ge5-2y(InP)y and have recently been synthesized as mono-crystalline films on Si substrates, using a synthesis route specifically designed to avoid phase separation between the III-V and IV constituents. Molecular ``building blocks'' containing group-V-centered III-V-IV3 cores, formed via interactions of group-III atoms and reactive silyly/germyl hydride precursors of desired composition (e.g, P(SiH3)3 , P(GeH3)3 , etc), assemble to form stable, covalent, diamond-like materials with the inherent tetrahedral symmetry and composition of the III-V-IV3 units. The resulting systems may provide access to a broad range of new semiconductor systems with extended optoelectronic properties, provided that the required molecular sources are available, the thermodynamic processes are viable, and the resulting alloy composition can be tuned to lattice-match the growth substrate. Molecular/solid-state simulations are used to identify promising synthetic pathways and guide the epitaxial creation of new (III-V)-(IV) materials. The thermodynamics of gas phase synthesis reactions, energetic stability of the alloys, and their epitaxial/chemical compatibility with the substrate are combined to form a global figure of merit. The latter corroborates the synthesis of known systems and predicts that formation of GaPSi3/Si(100), GaAsSi3/SiGe(100), AlPGe3/Ge(100) and InAsSi3/Ge(100) may also be favorable. Supported by NSF-DMR under SusChEM award #1309090.

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells.

PubMed

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey; Huang, Jing-Shun; Sfeir, Matthew Y; Reed, Mark A; Jung, Yeonwoong; Taylor, André D

2017-12-01

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p-n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generate and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface plasmon effects in the absorption enhancements of amorphous silicon solar cells with periodical metal nanowall and nanopillar structures.

PubMed

Lin, Hung-Yu; Kuo, Yang; Liao, Cheng-Yuan; Yang, C C; Kiang, Yean-Woei

2012-01-02

The authors numerically investigate the absorption enhancement of an amorphous Si solar cell, in which a periodical one-dimensional nanowall or two-dimensional nanopillar structure of the Ag back-reflector is fabricated such that a dome-shaped grating geometry is formed after Si deposition and indium-tin-oxide coating. In this investigation, the effects of surface plasmon (SP) interaction in such a metal nanostructure are of major concern. Absorption enhancement in most of the solar spectral range of significant amorphous Si absorption (320-800 nm) is observed in a grating solar cell. In the short-wavelength range of high amorphous Si absorption, the weakly wavelength-dependent absorption enhancement is mainly caused by the broadband anti-reflection effect, which is produced through the surface nano-grating structures. In the long-wavelength range of diminishing amorphous Si absorption, the highly wavelength-sensitive absorption enhancement is mainly caused by Fabry-Perot resonance and SP interaction. The SP interaction includes the contributions of surface plasmon polariton and localized surface plasmon.

Surges and Si IV Bursts in the Solar Atmosphere: Understanding IRIS and SST Observations through RMHD Experiments

NASA Astrophysics Data System (ADS)

Nóbrega-Siverio, D.; Martínez-Sykora, J.; Moreno-Insertis, F.; Rouppe van der Voort, L.

2017-12-01

Surges often appear as a result of the emergence of magnetized plasma from the solar interior. Traditionally, they are observed in chromospheric lines such as Hα 6563 \\mathringA and Ca II 8542 \\mathringA . However, whether there is a response to the surge appearance and evolution in the Si IV lines or, in fact, in many other transition region lines has not been studied. In this paper, we analyze a simultaneous episode of an Hα surge and a Si IV burst that occurred on 2016 September 03 in active region AR 12585. To that end, we use coordinated observations from the Interface Region Imaging Spectrograph and the Swedish 1-m Solar Telescope. For the first time, we report emission of Si IV within the surge, finding profiles that are brighter and broader than the average. Furthermore, the brightest Si IV patches within the domain of the surge are located mainly near its footpoints. To understand the relation between the surges and the emission in transition region lines like Si IV, we have carried out 2.5D radiative MHD (RMHD) experiments of magnetic flux emergence episodes using the Bifrost code and including the nonequilibrium ionization of silicon. Through spectral synthesis, we explain several features of the observations. We show that the presence of Si IV emission patches within the surge, their location near the surge footpoints and various observed spectral features are a natural consequence of the emergence of magnetized plasma from the interior to the atmosphere and the ensuing reconnection processes.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

NASA Astrophysics Data System (ADS)

Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

2017-03-01

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach.

PubMed

Lin, Tsung-Han; Margossian, Tigran; De Marchi, Michele; Thammasack, Maxime; Zemlyanov, Dmitry; Kumar, Sudhir; Jagielski, Jakub; Zheng, Li-Qing; Shih, Chih-Jen; Zenobi, Renato; De Micheli, Giovanni; Baudouin, David; Gaillardon, Pierre-Emmanuel; Copéret, Christophe

2017-02-08

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this breakthrough, challenges toward high-performance devices have emerged on each significant step, such as the inhomogeneous coverage issue and thermal-induced short circuit issue of metal silicide formation. In this respect, we developed a two-step organometallic approach for nickel silicide formation under near-ambient temperature. Transmission electron and atomic force microscopy show the formation of a homogeneous and conformal layer of NiSi x on pristine silicon surface. Post-treatment decreases the carbon content to a level similar to what is found for the original wafer (∼6%). X-ray photoelectron spectroscopy also reveals an increasing ratio of Si content in the layer after annealing, which is shown to be NiSi 2 according to X-ray absorption spectroscopy investigation on a Si nanoparticle model. I-V characteristic fitting reveals that this NiSi 2 layer exhibits a competitive Schottky barrier height of 0.41 eV and series resistance of 8.5 Ω, thus opening an alternative low-temperature route for metal silicide formation on advanced devices.

Interstellar C IV and Si IV column densities toward early-type stars

NASA Technical Reports Server (NTRS)

Bruhweiler, F. C.; Kondo, Y.; Mccluskey, G. E.

1980-01-01

Equivalent widths and deduced column densities of Si IV and C IV are examined for 18 early-type close binaries, and physical processes responsible for the origin of these ions in the interstellar medium are investigated. The available C IV/Si IV column density ratios typically lie within a narrow range from 0.8 to 4.5, and there is evidence that the column density of C IV is higher than that of N V along most lines of sight, suggesting that C IV is not formed in the same hot region as O VI. In addition, the existence of regions with a narrowly defined new temperature range around 50,000 deg K is indicated. The detection of the semitorrid gas of Bruhweiler, Kondo, and McCluskey (1978, 1979) is substantiated, and the relation of this gas to the observations of coronal gas in the galactic halo is discussed.

Ultraviolet Broad Absorption Features and the Spectral Energy Distribution of the QSO PG 1351+64. 3.1

NASA Technical Reports Server (NTRS)

Zheng, W.; Kriss, G. A.; Wang, J. X.; Brotherton, M.; Oegerle, W. R.; Blair, W. P.; Davidsen, A. F.; Green, R. F.; Hutchings, J. B.; Kaiser, M. E.;

Ultraviolet Broad Absorption Features and the Spectral Energy Distribution of the QSO PG 1351+641. 2.5

NASA Technical Reports Server (NTRS)

Zheng, W.; Kriss, G. A.; Wang, J. X.; Brotherton, M.; Oegerle, W. R.; Blair, W. P.; Davidsen, A. F.; Green, R. F.; Hutchings, J. B.; Kaiser, M. E.;

Spatial and Functional Relationships Among Pol V-Associated loci, Pol IV-Dependent siRNAs, and Cytosine Methylation in the Arabidopsis Epigenome

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierzbicki, A. T.; Cocklin, Ross; Mayampurath, Anoop

2012-08-15

Multisubunit RNA polymerases IV and V (Pols IV and V) mediate RNA-directed DNA methylation and transcriptional silencing of retrotransposons and heterochromatic repeats in plants. We identified genomic sites of Pol V occupancy in parallel with siRNA deep sequencing and methylcytosine mapping, comparing wild-type plants with mutants defective for Pol IV, Pol V, or both Pols IV and V. Approximately 60% of Pol V-associated regions encompass regions of 24-nucleotide (nt) siRNA complementarity and cytosine methylation, consistent with cytosine methylation being guided by base-pairing of Pol IV-dependent siRNAs with Pol V transcripts. However, 27% of Pol V peaks do not overlap sitesmore » of 24-nt siRNA biogenesis or cytosine methylation, indicating that Pol V alone does not specify sites of cytosine methylation. Surprisingly, the number of methylated CHH motifs, a hallmark of RNA-directed de novo methylation, is similar in wild-type plants and Pol IV or Pol V mutants. In the mutants, methylation is lost at 50%-60% of the CHH sites that are methylated in the wild type but is gained at new CHH positions, primarily in pericentromeric regions. These results indicate that Pol IV and Pol V are not required for cytosine methyltransferase activity but shape the epigenome by guiding CHH methylation to specific genomic sites.« less

Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10 nm silicon-nanodisc array structure

NASA Astrophysics Data System (ADS)

Fairuz Budiman, Mohd; Hu, Weiguo; Igarashi, Makoto; Tsukamoto, Rikako; Isoda, Taiga; Itoh, Kohei M.; Yamashita, Ichiro; Murayama, Akihiro; Okada, Yoshitaka; Samukawa, Seiji

2012-02-01

A sub-10 nm, high-density, periodic silicon-nanodisc (Si-ND) array has been fabricated using a new top-down process, which involves a 2D array bio-template etching mask made of Listeria-Dps with a 4.5 nm diameter iron oxide core and damage-free neutral-beam etching (Si-ND diameter: 6.4 nm). An Si-ND array with an SiO2 matrix demonstrated more controllable optical bandgap energy due to the fine tunability of the Si-ND thickness and diameter. Unlike the case of shrinking Si-ND thickness, the case of shrinking Si-ND diameter simultaneously increased the optical absorption coefficient and the optical bandgap energy. The optical absorption coefficient became higher due to the decrease in the center-to-center distance of NDs to enhance wavefunction coupling. This means that our 6 nm diameter Si-ND structure can satisfy the strict requirements of optical bandgap energy control and high absorption coefficient for achieving realistic Si quantum dot solar cells.

Time scale variations of the physical parameters of the Si IV resonance lines in the case of the Be star HD 50138

NASA Astrophysics Data System (ADS)

Stathopoulos, D.

2012-01-01

As it is well known many lines in the spectra of hot emission stars (Be and Oe) present peculiar and very complex profiles. As a result, we cannot find a classical theoretical distribution in order to fit these profiles. Because of this, we are not able to calculate the physical parameters of the regions were these lines are created. In this paper, using the Gauss-Rotation model (GR-model Danezis et al), that proposed the idea that these complex profiles consist of a number of independent Discrete or Satellite Absorption Components (DACs, SACs), we study the UV Si IV (λλ 1393.755, 1402.77 A) resonance lines of the Be star HD 50138 in three different periods. From this analysis we can calculate the values of a group of physical parameters. The parameters are the apparent rotational and radial velocities, the random velocities of the thermal motions of the ions, as well as the Full Width at Half Maximum (FWHM) an the absorbed energy of the independent regions of matter which produce the main and the satellite components of the studied spectral line. Finally we calculate the time scale variations of the above physical parameters.

Investigation of electronic structures and optical properties of β -Si3N4 doped with IV A elements: A first-principles simulation

NASA Astrophysics Data System (ADS)

Lu, Xuefeng; Gao, Xu; Ren, Junqiang; Li, Cuixia; Guo, Xin; Wei, Yupeng; La, Peiqing

2018-04-01

Based on first-principles simulations with the generalized gradient approximation (GGA) of the Perdew-Burke-Ernzerhof (PBE) functional, we studied the electronic structures and optical properties of hexagonal silicon nitride (β-Si3N4) doped with IV A elements, C, Ge, Sn and Pb. It was found that the Ge-doped system is characterized by a more stable structure with a lower formation energy of 2.584 eV compared with those of the C-, Sn- and Pb-doped systems of 3.877 eV, 5.249 eV and 7.672 eV, respectively. The band gap (EG) of the Pb-doped system was the lowest at 1.6 eV, displaying semiconducting characteristics. Additionally, there was a transition from a direct band gap to an indirect band gap in the C-doped system. Charge difference density analysis showed that the covalent property of the C-N bonds was enhanced by expansion of the electron-free region and the larger Mulliken population values of 0.71 and 0.86. Furthermore, lower absorption and reflectivity peaks at 11.30 eV were observed for the C-doped system, demonstrating its broader potential for application in photoelectric and microelectronic devices.

Spectral studies of SiCl4 + N2O + Ar and SiH4 + Ar mixtures in a shock tube in 160-550 nm range

NASA Technical Reports Server (NTRS)

Park, C.; Fujiwara, T.

1978-01-01

Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.

Spectroscopic and Orbital Properties of the Binary Feige 24 and Discovery of External Plasma at Inferior Conjunction

NASA Astrophysics Data System (ADS)

Vennes, S.; Thorstensen, J. R.

1993-12-01

We have obtained new high-dispersion optical (KPNO) and ultraviolet spectroscopy (IUE) of the close white dwarf + red dwarf binary system Feige 24 (P = 4.2316 d). The optical range shows a composite DA+dM spectrum, together with H i Balmer and He i emission. The orbital phase dependence of the emission shows that it results from extreme ultraviolet (EUV) light reprocessing in the red dwarf photosphere. The systems close enough and hot enough to show this reprocessing signature must arise from common-envelope evolution. The ultraviolet spectrum is dominated by the white dwarf. It shows numerous Fe v absorption lines together with C iv, N v, and Si iv resonance doublets and few excited lines from the most abundant elements (N iv, O iv, S v). We measured accurate (1 km s(-1) ) radial velocities of the red dwarf component motion, traced by both optical absorption and emission lines, and new radial velocities of the white dwarf, traced by UV Fe v lines. Combining these measurements, we refine the orbital parameters presented by Vennes et al. (1991, ApJ, 372, L37), and we confirm that the white dwarf gravitational redshift is exceptionally small (8 +/- 2 km s(-1) ). Using theoretical radii for thin hydrogen layers we can uniquely constrain its mass and radius to MWD = 0.40 +/- 0.04 Msun and RWD = 0.024-0.032 Rsun. The mass of the red dwarf and the inclination of the system naturally follow: MdM = 0.27 +/- 0.03 Msun, i = 65 deg . The IUE spectra taken when the system is near inferior conjunction show strong He ii 1640 absorption. The profile is highly variable in width and intensity and appears correlated with the passage of the white dwarf in the background of plasma associated with the red dwarf, almost 4 Rsun above the orbital plane. At maximum, the line absorption is broad (130 km s(-1) ) and blueshifted (-20 km s(-1) ) relative to the systemic velocity. The plasma probably consists of coronal material and/or wind material. Additional UV spectroscopy will help determine the nature, dynamics, and temperature of this external plasma. This work is supported by NASA contract NAS5-30180 and grant NAG5-1805.

Electronic structure of O-doped SiGe calculated by DFT + U method

NASA Astrophysics Data System (ADS)

Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

2016-12-01

To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

Real-space study of the optical absorption in alternative phases of silicon

NASA Astrophysics Data System (ADS)

Ong, Chin Shen; Coh, Sinisa; Cohen, Marvin L.; Louie, Steven G.

2017-12-01

We introduce a real-space approach to understand the relationship between optical absorption and crystal structure. We apply this approach to alternative phases of silicon, with a focus on the Si20 crystal phase as a case study. We find that about 83% of the changes in the calculated low-energy absorption in Si20 as compared to Si in the diamond structure can be attributed to reducing the differences between the on-site energies of the bonding and antibonding orbitals as well as increasing the hopping integrals for specific Si-Si bonds.

Tracing the Cosmic Metal Evolution in the Low-redshift Intergalactic Medium

NASA Astrophysics Data System (ADS)

Shull, J. Michael; Danforth, Charles W.; Tilton, Evan M.

2014-11-01

Using the Cosmic Origins Spectrograph aboard the Hubble Space Telescope, we measured the abundances of six ions (C III, C IV, Si III, Si IV, N V, and O VI) in the low-redshift (z <= 0.4) intergalactic medium (IGM). Both C IV and Si IV have increased in abundance by a factor of ~10 from z ≈ 5.5 to the present. We derive ion mass densities, ρion ≡ Ωionρcr, with Ωion expressed relative to the closure density. Our models of mass-abundance ratios, (Si III/Si IV) = 0.67+0.35-0.19, (C III/C IV) = 0.70+0.43-0.20, and (Ω C \\scriptsize{III} + Ω C \\scriptsize{IV}) / (Ω _Si \\scriptsize{III} + Ω _Si \\scriptsize{IV}) = 4.9+2.2-1.1, are consistent with the photoionization parameter log U = -1.5 ± 0.4, hydrogen photoionization rate ΓH = (8 ± 2) × 10-14 s-1 at z < 0.4, and specific intensity I 0 = (3 ± 1) × 10-23 erg cm-2 s-1 Hz-1 sr-1 at the Lyman limit. Consistent ionization corrections for C and Si are scaled to an ionizing photon flux Φ0 = 104 cm-2 s-1, baryon overdensity Δ b ≈ 200 ± 50, and "alpha-enhancement" (Si/C enhanced to three times its solar ratio). We compare these metal abundances to the expected IGM enrichment and abundances in higher photoionized states of carbon (C V) and silicon (Si V, Si VI, and Si VII). Our ionization modeling infers IGM metal densities of (5.4 ± 0.5) × 105 M ⊙ Mpc-3 in the photoionized Lyα forest traced by the C and Si ions and (9.1 ± 0.6) × 105 M ⊙ Mpc-3 in hotter gas traced by O VI. Combining both phases, the heavy elements in the IGM have mass density ρ Z = (1.5 ± 0.8) × 106 M ⊙ Mpc-3 or Ω Z ≈ 10-5. This represents 10% ± 5% of the metals produced by (6 ± 2) × 108 M ⊙ Mpc-3 of integrated star formation with yield ym = 0.025 ± 0.010. The missing metals at low redshift may reside within galaxies and in undetected ionized gas in galactic halos and circumgalactic medium. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained from the data archive at the Space Telescope Science Institute. STScI is operated by the Association of Universities for Research in Astronomy, Inc., under NASA Contract NAS5-26555.

Achieving an Accurate Surface Profile of a Photonic Crystal for Near-Unity Solar Absorption in a Super Thin-Film Architecture.

PubMed

Kuang, Ping; Eyderman, Sergey; Hsieh, Mei-Li; Post, Anthony; John, Sajeev; Lin, Shawn-Yu

2016-06-28

In this work, a teepee-like photonic crystal (PC) structure on crystalline silicon (c-Si) is experimentally demonstrated, which fulfills two critical criteria in solar energy harvesting by (i) its Gaussian-type gradient-index profile for excellent antireflection and (ii) near-orthogonal energy flow and vortex-like field concentration via the parallel-to-interface refraction effect inside the structure for enhanced light trapping. For the PC structure on 500-μm-thick c-Si, the average reflection is only ∼0.7% for λ = 400-1000 nm. For the same structure on a much thinner c-Si ( t = 10 μm), the absorption is near unity (A ∼ 99%) for visible wavelengths, while the absorption in the weakly absorbing range (λ ∼ 1000 nm) is significantly increased to 79%, comparing to only 6% absorption for a 10-μm-thick planar c-Si. In addition, the average absorption (∼94.7%) of the PC structure on 10 μm c-Si for λ = 400-1000 nm is only ∼3.8% less than the average absorption (∼98.5%) of the PC structure on 500 μm c-Si, while the equivalent silicon solid content is reduced by 50 times. Furthermore, the angular dependence measurements show that the high absorption is sustained over a wide angle range (θinc = 0-60°) for teepee-like PC structure on both 500 and 10-μm-thick c-Si.

The triply-ionized carbon forest from eBOSS: cosmological correlations with quasars in SDSS-IV DR14

NASA Astrophysics Data System (ADS)

Blomqvist, Michael; Pieri, Matthew M.; du Mas des Bourboux, Hélion; Busca, Nicolás G.; Slosar, Anže; Bautista, Julian E.; Brinkmann, Jonathan; Brownstein, Joel R.; Dawson, Kyle; de Sainte Agathe, Victoria; Guy, Julien; Percival, Will J.; Pérez-Ràfols, Ignasi; Rich, James; Schneider, Donald P.

2018-05-01

We present measurements of the cross-correlation of the triply-ionized carbon (CIV) forest with quasars using Sloan Digital Sky Survey Data Release 14. The study exploits a large sample of new quasars from the first two years of observations by the Extended Baryon Oscillation Spectroscopic Survey (eBOSS). The CIV forest is a weaker tracer of large-scale structure than the Lyα forest, but benefits from being accessible at redshifts z<2 where the quasar number density from eBOSS is high. Our data sample consists of 287,651 CIV forest quasars in the redshift range 1.4

Design of optimum rear passivated submicron Al corrugation in very thin textured silicon back-contact back-junction solar cell for absorption enhancement up to near-infrared region

NASA Astrophysics Data System (ADS)

Abdullah, Mohd Faizol; Hashim, Abdul Manaf

2018-01-01

The optical reflection and absorption in a very thin textured back-contact back-junction silicon (Si) solar cell are investigated. The introduction of nanotexturing on front Si surface has significantly increased the absorption in the ultraviolet (UV)-visible region with a low reflection of below 0.05. The introduction of rear surface corrugation formed by a combination of SiO2-Al has successfully enhanced the absorption up to near-infrared (NI) region. The optimum crest width, periodicity, and trough depth of corrugation are derived, which lead to high absorption up to 0.97. The internal reflection and scattering that occur near the plasmonic Al corrugation are contributing to the local maximum electric field intensity in both transverse magnetic (TM) and transverse electric (TE) modes. Since there is no perpendicular electric component in TE mode, a coupling of electric field within a corrugation trough is not observed but is only observed in TM mode. On 10-μm-thick Si, the application of Si nanocones (NCs) and optimized rear Al corrugation results in 56% improvement in photogenerated current, Jsc, compared to the reference flat Si. Thinning down the Si to only 2 μm severely limits the Jsc. Our optimized Al corrugation manages to compensate net 9% and 7% Jsc loss in 2-μm Si in respect to 10-μm-thick Si for the model with and without front Si NCs. The results seem to reveal the optimum design of rear Al corrugation for the absorption enhancement from UV up to NI wavelength region.

OSO 8 observations of wave propagation in the solar chromosphere and transition region

NASA Technical Reports Server (NTRS)

Chipman, E. G.

1978-01-01

The University of Colorado instrument on OSO 8 has been used to observe relative phases of the 300-s intensity variation between the temperature-minimum region and several emission lines formed in the solar chromosphere and chromosphere-corona transition region. The lines used are due to Fe II, Si II, C II, Si IV, and C IV. The scattered light in the spectrograph, which originates almost entirely in the spectral region between 1700 and 1900 A, was used as a probe of the temperature-minimum region. The lines of Fe II, Si II, and C II show almost identical delays of approximately 30 s relative to the temperature minimum, while the intensity oscillations of the lines of Si IV and C IV appear to lead the temperature-minimum intensity oscillations by about 10 s.

Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong; Ji, An; Yang, Fuhua

2014-03-01

The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

Two-photon absorption in SiO{sub 2}- and (SiO{sub 2} + GeO{sub 2})-based fibres at a wavelength of 349 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chunaev, D S; Karasik, A Ya

2014-06-30

The nonlinear two-photon light absorption coefficients have been measured in an optical fibre with a quartz glass (SiO{sub 2}) core and in a fibre with a germanosilicate glass (SiO{sub 2} + GeO{sub 2}) core. The two-photon absorption coefficient β measured at a wavelength of 349 nm in the (SiO{sub 2} + GeO{sub 2})-based fibre (13.7 cm TW{sup -1}) multiply exceeds that for the pure quartz glass optical fibre (0.54 cm TW{sup -1}). (nonlinear optical phenomena)

Understanding the strong intervening O VI absorber at zabs ˜ 0.93 towards PG1206+459

NASA Astrophysics Data System (ADS)

Rosenwasser, B.; Muzahid, S.; Charlton, J. C.; Kacprzak, G. G.; Wakker, B. P.; Churchill, C. W.

2018-05-01

We have obtained new observations of the partial Lyman limit absorber at zabs=0.93 towards quasar PG 1206+459, and revisit its chemical and physical conditions. The absorber, with N({H I})˜ 10^{17.0} cm-2 and absorption lines spread over ≳1000 km s-1 in velocity, is one of the strongest known O VI absorbers at \\log N({{O VI}})= 15.54 ± 0.17. Our analysis makes use of the previously known low- (e.g. Mg II), intermediate- (e.g. Si IV), and high-ionization (e.g. C IV, N V, Ne VIII) metal lines along with new Hubble Space Telescope (HST)/Cosmic Origins Spectrograph (COS) observations that cover O VI and an HST/ACS image of the quasar field. Consistent with previous studies, we find that the absorber has a multiphase structure. The low-ionization phase arises from gas with a density of \\log (n_H/cm^{-3})˜ -2.5 and a solar to supersolar metallicity. The high-ionization phase stems from gas with a significantly lower density, i.e. \\log (n_H/cm^{-3}) ˜ -3.8, and a near-solar to solar metallicity. The high-ionization phase accounts for all of the absorption seen in C IV, N V, and O VI. We find the the detected Ne VIII, reported by Tripp et al. (2011), is best explained as originating in a stand-alone collisionally ionized phase at T˜ 10^{5.85} K, except in one component in which both O VI and Ne VIII can be produced via photoionization. We demonstrate that such strong O VI absorption can easily arise from photoionization at z ≳ 1, but that, due to the decreasing extragalactic UV background radiation, only collisional ionization can produce large O VI features at z ˜ 0. The azimuthal angle of ˜88° of the disc of the nearest (68 kpc) luminous (1.3L*) galaxy at zgal = 0.9289, which shows signatures of recent merger, suggests that the bulk of the absorption arises from metal enriched outflows.

Effect of Aluminum on Characterization of ZnTe/n-Si Heterojunction Photo detector

NASA Astrophysics Data System (ADS)

Maki, Samir A.; Hassun, Hanan K.

2018-05-01

Aluminum doped zinc telluride ZnTenSi thin films of (400nm) thickness with (005 01 015 and 02) wt % were deposited on the glass substrate and nSi wafer to fabricate ZnTenSi heterojunction Photodetector by using thermal vacuum evaporation technique Structural optical electrical and photovoltaic properties are investigated for the samples XRD analysis shows that all the deposited ZnTenSi films show polycrystalline structure with cubic phases and highest sharp peak corresponding to (111) planes and from AFM images shows the surface roughness increase with increase Al percentage ratio The optical absorption measurement of the films was find from transmittance ranges in the variety of wavelength (400 1000) nm and the optical energy band gap decrease from 224 eV to 186 eV dependent upon the Aluminum ratio in the films moreover our studies contain the calculation of the electrical properties of hetero junction were obtained via IV (dark and light condition) and C V measurement The photoelectric properties indicated rise illumination current of heterojunctions through increasing both of incident lighting intensity and Aluminum dopant The values of specific detectivity and quantum efficiency are calculated for all samples also the best spectral response occurs when Al doping ratio 02% The high photo sensitivity and comparatively fast response haste are attributable to in height crystal quality of the [ZnTe ] thin films.

Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

NASA Astrophysics Data System (ADS)

Pal, Dipayan; Singhal, Jaya; Mathur, Aakash; Singh, Ajaib; Dutta, Surjendu; Zollner, Stefan; Chattopadhyay, Sudeshna

2017-11-01

Atomic Layer Deposition technique was used to grow high quality, very low roughness, crystalline, Zinc Oxide (ZnO) thin films on silicon (Si) and fused quartz (SiO2) substrates to study the optical properties. Spectroscopic ellipsometry results of ZnO/Si system, staggered type-II quantum well, demonstrate that there is a significant drop in the magnitudes of both the real and imaginary parts of complex dielectric constants and in near-band gap absorption along with a blue shift of the absorption edge with decreasing film thickness at and below ∼20 nm. Conversely, UV-vis absorption spectroscopy of ZnO/SiO2, thin type-I quantum well, consisting of a narrower-band gap semiconductor grown on a wider-band gap (insulator) substrate, shows the similar thickness dependent blue-shift of the absorption edge but with an increase in the magnitude of near-band gap absorption with decreasing film thickness. Thickness dependent blue shift, energy vs. 1/d2, in two different systems, ZnO/Si and ZnO/SiO2, show a difference in their slopes. The observed phenomena can be consistently explained by the corresponding exciton (or carrier/s) deconfinement and confinement effects at the ZnO/Si and ZnO/SiO2 interface respectively, where Tanguy-Elliott amplitude pre-factor plays the key role through the electron-hole overlap factor at the interface.

Photovoltaic Enhancement with Ferroelectric HfO2Embedded in the Structure of Solar Cells

NASA Astrophysics Data System (ADS)

Eskandari, Rahmatollah; Malkinski, Leszek

Enhancing total efficiency of the solar cells is focused on the improving one or all of the three main stages of the photovoltaic effect: absorption of the light, generation of the carriers and finally separation of the carriers. Ferroelectric photovoltaic designs target the last stage with large electric forces from polarized ferroelectric films that can be larger than band gap of the material and the built-in electric fields in semiconductor bipolar junctions. In this project we have fabricated very thin ferroelectric HfO2 films ( 10nm) doped with silicon using RF sputtering method. Doped HfO2 films were capped between two TiN layers ( 20nm) and annealed at temperatures of 800ºC and 1000ºC and Si content was varied between 6-10 mol. % using different size of mounted Si chip on hafnium target. Piezoforce microscopy (PFM) method proved clear ferroelectric properties in samples with 6 mol. % of Si that were annealed at 800ºC. Ferroelectric samples were poled in opposite directions and embedded in the structure of a cell and an enhancement in photovoltaic properties were observed on the poled samples vs unpoled ones with KPFM and I-V measurements. The current work is funded by the NSF EPSCoR LA-SiGMA project under award #EPS-1003897.

CHLORINE ABSORPTION IN S(IV) SOLUTIONS

EPA Science Inventory

The report gives results of measurements of the rate of Chlorine (Cl2) absorption into aqueous sulfite/bisulfite -- S(IV) -- solutions at ambient temperature using a highly characterized stirred-cell reactor. The reactor media were 0 to 10 mM S(IV) with pHs of 3.5-8.5. Experiment...

Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration

NASA Astrophysics Data System (ADS)

Murota, Junichi; Le Thanh, Vinh

2015-03-01

One of the main requirements for ultra-large-scale integration (ULSI) is atomic-order control of process technology. Our concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of a few nm-thick Ge/about 4 nm-thick Si0.5Ge0.5/Si(100) by NH3, it is found that N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5/Si(100) substrate and form Si nitride, even at 500 °C. By subsequent H2 heat treatment, although N atomic amount in Ge layer is reduced drastically, the reduction of the Si nitride is slight. It is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride and that Ge/atomic-order N layer/Si1-xGex/Si (100) heterostructure is formed. These results demonstrate the capability of CVD technology for atomically controlled nitridation of group IV semiconductors for ultra-large-scale integration. Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam.

Hybrid silicon–carbon nanostructures for broadband optical absorption

DOE PAGES

Yang, Wen -Hua; Lu, Wen -Cai; Ho, K. M.; ...

2017-01-25

Proper design of nanomaterials for broadband light absorption is a key factor for improving the conversion efficiency of solar cells. Here we present a hybrid design of silicon–carbon nanostructures with silicon clusters coated by carbon cages, i.e., Si m@C 2n for potential solar cell application. The optical properties of these hybrid nanostructures were calculated based on time dependent density function theory (TDDFT). The results show that the optical spectra of Si m@C 2n are very different from those of pure Si m and C 2n clusters. While the absorption spectra of pure carbon cages and Si m clusters exhibit peaksmore » in the UV region, those of the Si m@C 2n nanostructures exhibit a significant red shift. Superposition of the optical spectra of various Si m@C 2n nanostructures forms a broad-band absorption, which extends to the visible light and infrared regions. As a result, the broadband adsorption of the assembled Si m@C 2n nanoclusters may provide a new approach for the design of high efficiency solar cell nanomaterials.« less

Approaching total absorption of graphene strips using a c-Si subwavelength periodic membrane

NASA Astrophysics Data System (ADS)

Sang, Tian; Wang, Rui; Li, Junlang; Zhou, Jianyu; Wang, Yueke

2018-04-01

Approaching total absorption of graphene strips at near infrared using a crystalline-silicon (c-Si) subwavelength periodic membrane (SPM) is presented. The absorption in graphene strips in a c-Si SPM is enhanced by a resonant tip, which is resulted from the coupling between the guided mode and the radiation mode through symmetry breaking of the structure at near-normal incidence. The enhancement of the electric field intensity is increased 1939 times and the group velocity of light is decreased to 3.55 ×10-4c at resonance, and 99.3% absorption in graphene strips can be achieved by critical coupling at the incident angle of 2°. High absorption of the graphene strips can be maintained as the etching thickness, the strip width, and the period are altered. When this type of c-Si SPM with graphene strips is used in refractive index sensors, it shows excellent sensing properties due to its stable near-unity absorption.

Fourier Transform Infrared Absorption Spectroscopy of Gas-Phase and Surface Reaction Products during Si Etching in Inductively Coupled Cl2 Plasmas

NASA Astrophysics Data System (ADS)

Miyata, Hiroki; Tsuda, Hirotaka; Fukushima, Daisuke; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2011-10-01

A better understanding of plasma-surface interactions is indispensable during etching, including the behavior of reaction or etch products, because the products on surfaces and in the plasma are important in passivation layer formation through their redeposition on surfaces. In practice, the nanometer-scale control of plasma etching would still rely largely on such passivation layer formation as well as ion-enhanced etching on feature surfaces. This paper presents in situ Fourier transform infrared (FTIR) absorption spectroscopy of gas-phase and surface reaction products during inductively coupled plasma (ICP) etching of Si in Cl2. The observation was made in the gas phase by transmission absorption spectroscopy (TAS), and also on the substrate surface by reflection absorption spectroscopy (RAS). The quantum chemical calculation was also made of the vibrational frequency of silicon chloride molecules. The deconvolution of the TAS spectrum revealed absorption features of Si2Cl6 and SiClx (x = 1-3) as well as SiCl4, while that of the RAS spectrum revealed relatively increased absorption features of unsaturated silicon chlorides. A different behavior was also observed in bias power dependence between the TAS and RAS spectra.

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallacher, K.; Millar, R. W.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk

2016-02-29

Mid-infrared intersubband absorption from p-Ge quantum wells with Si{sub 0.5}Ge{sub 0.5} barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

Sorption of Th (IV) to silica as a function of pH, humic/fulvic acid, ionic strength, electrolyte type.

PubMed

Chen, Changlun; Wang, Xiangke

2007-02-01

The removal behavior of thorium (Th(IV)) has been investigated in multicomponent systems containing silica (SiO2) as the model of inorganic particles because of its widespread presence in the earth's crust and soil humic acid (HA)/fulvic acid (FA) by batch experiments. The influence of pH from 2 to 12, ionic strength from 0.02 to 0.2 M KNO3, soil HA/FA concentration from 8.3 to 22.5 mg/L, and foreign cations (Li+, Na+, K+) and anions (NO3(-), Cl-) on the sorption of Th(IV) onto SiO2 was also tested. The sorption isotherms of Th(IV) at approximately constant pH (3.50+/-0.02) were determined and analyzed regressively with three kinds of sorption isotherm models, i.e., linear, Langmuir, and Freundlich models. The results demonstrated that the sorption of Th(IV) onto SiO2 increased steeply with increasing pH from 2 to 4. Generally, humic substances (HSs) were shown to enhance Th(IV) sorption at low pH, but to reduce Th(IV) sorption at intermediate and high pH. It was a hypothesis that the significantly positive influence of HA/FA at pH from 2 to 4 on the sorption of Th(IV) onto SiO2 was attributed to strong surface binding of HA/FA on SiO2 and subsequently the formation of ternary surface complexes such as [triple bond]MO-O-HA-Th or [triple bond]MO-O-FA-Th. The results also demonstrated that the sorption was strongly dependent on the concentration of HA/FA, and independent of ionic strength and foreign ions under our experimental conditions.

Completing the evolution of supernova remnants and their bubbles

NASA Technical Reports Server (NTRS)

Slavin, Jonathan D.; Cox, Donald P.

1992-01-01

The filling fraction of hot gas in the ISM is reexamined with new calculations of the very long term evolution of SNRs and their fossil hot bubbles. Results are presented of a 1D numerical solution of the evolution of an SNR in a homogeneous medium with a nonthermal pressure corresponding to a 5-micro-G magnetic field and density of 0.2/cu cm. Comparison is made with a control simulation having no magnetic field pressure. It is found that the evolutions, once they have become radiative, differ in several significant ways, while both differ appreciably from qualitative pictures presented in the past. Over most of the evolution of either case, the hot bubble in the interior occupies only a small fraction of the shocked volume, the remainder in a thick shell of slightly compressed material. Column densities and radial distributions of O VI, N V, C IV, and Si IV as well as examples of absorption profiles for their strong UV lines are presented.

Investigation of silicate mineral sanidine by vibrational and NMR spectroscopic methods

NASA Astrophysics Data System (ADS)

Anbalagan, G.; Sankari, G.; Ponnusamy, S.; kumar, R. Thilak; Gunasekaran, S.

2009-10-01

Sanidine, a variety of feldspar minerals has been investigated through optical absorption, vibrational (IR and Raman), EPR and NMR spectroscopic techniques. The principal reflections occurring at the d-spacings, 3.2892, 3.2431, 2.9022 and 2.6041 Å confirm the presence of sanidine structure in the mineral. Sanidine shows five prominent characteristic infrared absorption bands in the region 1200-950, 770-720, 590-540 and 650-640 cm -1. The Raman spectrum shows the strongest band at 512 cm -1 characteristic of the feldspar structure, which contains four membered rings of tetrahedra. The UV-vis-NIR absorption spectrum had strong absorption features at 6757, 5780 and 5181 cm -1 due to the combination of fundamental OH- stretching. The bands at 11236 and 8196 cm -1and the strong, well-defined band at (30303 cm -1 attest the presence of Fe 2+ and Fe 3+, respectively, in the sample. The signals at g = 4.3 and 3.7 are interpreted in terms of Fe 3+ at two distinct tetrahedral positions Tl and T2 of the monoclinic crystal structure The 29Si NMR spectrum shows two peaks at -97 and -101 ppm corresponding to T2 and T1, respectively, and one peak in 27Al NMR for Al(IV).

Investigation of silicate mineral sanidine by vibrational and NMR spectroscopic methods.

PubMed

Anbalagan, G; Sankari, G; Ponnusamy, S; Kumar, R Thilak; Gunasekaran, S

2009-10-01

Sanidine, a variety of feldspar minerals has been investigated through optical absorption, vibrational (IR and Raman), EPR and NMR spectroscopic techniques. The principal reflections occurring at the d-spacings, 3.2892, 3.2431, 2.9022 and 2.6041 A confirm the presence of sanidine structure in the mineral. Sanidine shows five prominent characteristic infrared absorption bands in the region 1200-950, 770-720, 590-540 and 650-640 cm(-1). The Raman spectrum shows the strongest band at 512 cm(-1) characteristic of the feldspar structure, which contains four membered rings of tetrahedra. The UV-vis-NIR absorption spectrum had strong absorption features at 6757, 5780 and 5181 cm(-1) due to the combination of fundamental OH- stretching. The bands at 11236 and 8196 cm(-1)and the strong, well-defined band at (30303 cm(-1) attest the presence of Fe(2+) and Fe(3+), respectively, in the sample. The signals at g = 4.3 and 3.7 are interpreted in terms of Fe(3+) at two distinct tetrahedral positions Tl and T2 of the monoclinic crystal structure The (29)Si NMR spectrum shows two peaks at -97 and -101 ppm corresponding to T2 and T1, respectively, and one peak in (27)Al NMR for Al(IV).

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

NASA Astrophysics Data System (ADS)

Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

2018-01-01

Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

Changes in the Near-UV Spectrum of eta Car 2002 - 2015

NASA Astrophysics Data System (ADS)

Martin, John; Davidson, Kris; Ishabashi, Kazunori; Humphreys, Roberta; Mehner, Andrea

2018-01-01

Eta Car's detailed UV spectrum has been somewhat neglected in recent years, because of its complexity. Here we report on NUV and FUV data obtained with the HST STIS/MAMA spanning a time interval of more than a decade. The main results fall into three categories: (1) Changes in a diverse set of absorption lines (Fe II, Si II, Si IV, Al III, etc.) indicate changes in the wind's ionization structure between 2002 and 2013. The trend is toward more highly ionized species. (2) The extremely luminous N III] 1750 A multiplet has also changed in the same sense. (3) Curiously, the N III] profile in 2015 closely resembled its 2013 state. This is a surprise because those two dates had very different orbital phases; in most models the Doppler velocity profiles should have differed because the shock structure's viewing angle changed. We discuss these results' implications for the primary stellar wind and for the secondary star's orbit.

Broadband absorption enhancement in amorphous Si solar cells using metal gratings and surface texturing

NASA Astrophysics Data System (ADS)

Magdi, Sara; Swillam, Mohamed A.

2017-02-01

The efficiencies of thin film amorphous silicon (a-Si) solar cells are restricted by the small thickness required for efficient carrier collection. This thickness limitations result in poor light absorption. In this work, broadband absorption enhancement is theoretically achieved in a-Si solar cells by using nanostructured back electrode along with surface texturing. The back electrode is formed of Au nanogratings and the surface texturing consists of Si nanocones. The results were then compared to random texturing surfaces. Three dimensional finite difference time domain (FDTD) simulations are used to design and optimize the structure. The Au nanogratings achieved absorption enhancement in the long wavelengths due to sunlight coupling to surface plasmon polaritons (SPP) modes. High absorption enhancement was achieved at short wavelengths due to the decreased reflection and enhanced scattering inside the a-Si absorbing layer. Optimizations have been performed to obtain the optimal geometrical parameters for both the nanogratings and the periodic texturing. In addition, an enhancement factor (i.e. absorbed power in nanostructured device/absorbed power in reference device) was calculated to evaluate the enhancement obtained due to the incorporation of each nanostructure.

The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors

DTIC Science & Technology

2013-10-01

infrared applications; SiGeSn heterostructure photonics; group IV plasmonics with silicides , germanicides, doped Si, Ge or GeSn; Franz-Keldysh...SPP waveguide in which localized silicide or germanicide “conductors” are introduced to give local plasmonic confinement. Therefore, guided-wave...reconfigurable integrated optoelectronics, electro-optical logic in silicon, silicides for group IV plasmonics, reviews of third-order nonlinear optical

Optical absorption of suspended graphene based metal plasmonic grating in the visible range

NASA Astrophysics Data System (ADS)

Han, Y. X.; Chen, B. B.; Yang, J. B.; He, X.; Huang, J.; Zhang, J. J.; Zhang, Z. J.

2018-05-01

We employ finite-difference time-domain ( FDTD) method and Raman spectroscopy to study the properties of graphene, which is suspended on a gold/SiO2/Si grating structure with different trench depth of SiO2 layer. The absorption enhancement of suspended graphene and plasmonic resonance of metal grating are investigated in the visible range using 2D FDTD method. Moreover, it is found that the intensity of the Raman features depends very sensitively on the trench depth of SiO2 layer. Raman enhancement in our experiments is attributed to the enhanced optical absorption of graphene by near-field coupling based metal plasmonic grating. The enhanced absorption of suspended graphene modulated by localized surface plasmon resonance (LSPR) offers a potential application for opto-electromechanical devices.

Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

NASA Astrophysics Data System (ADS)

Bhowmik, Dipak; Karmakar, Prasanta

2018-05-01

The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

Gd-based Contrast Enhancement of the Perivascular Spaces in the Basal Ganglia.

PubMed

Naganawa, Shinji; Nakane, Toshiki; Kawai, Hisashi; Taoka, Toshiaki

2017-01-10

In textbooks, the perivascular space (PVS) is described as non-enhancing after the intravenous administration of gadolinium-based contrast agent (IV-GBCA). We noticed that the PVS sometimes has high signal intensity (SI) on heavily T 2 -weighted 3D-FLAIR (hT 2 -FL) images obtained 4 h after IV-GBCA. The purpose of this study was to retrospectively evaluate the contrast enhancement of the PVS. In 8 healthy subjects and 19 patients with suspected endolymphatic hydrops, magnetic resonance cisternography (MRC) and hT 2 -FL images were obtained before and 4 h after a single dose of IV-GBCA. No subjects had renal insufficiency. On axial MRC at the level of the anterior commissure (AC)-posterior commissure (PC) line, 1 cm circular regions of interest (ROIs) were drawn centering on the PVS in the bilateral basal ganglia and thalami. Three-millimeter diameter ROIs were set in the cerebrospinal fluid (CSF) of the bilateral ambient cistern. The ROIs on MRC were copied onto the hT 2 -FL images and the SI was measured. The SI ratio (SIR) was defined as SIR PVS = SI of PVS/SI of the thalami, and SIR CSF = SI of CSF/SI of the thalami. The average of the bilateral values was used for the calculation. The SIR CSF , SIR PVS , and SI of the thalami were compared between before and 4 h after IV-GBCA. The SIR was increased significantly from 1.02 ± 0.37 to 2.65 ± 0.82 in the CSF (P < 0.01) and from 1.20 ± 0.35 to 2.13 ± 1.23 in the PVS at 4 h after IV-GBCA (P < 0.01). The SI of the thalami showed no significant difference. The enhancement of the PVS at 4 h after IV-GBCA was confirmed even in subjects without renal insufficiency. It is possible that the GBCA in the blood vessels might have permeated into the cerebrospinal fluid (CSF) space and the PVS. This might be a first step in the imaging evaluation of the glymphatic system (waste clearance system) of the brain.

Gd-based Contrast Enhancement of the Perivascular Spaces in the Basal Ganglia

PubMed Central

Naganawa, Shinji; Nakane, Toshiki; Kawai, Hisashi; Taoka, Toshiaki

2017-01-01

Purpose: In textbooks, the perivascular space (PVS) is described as non-enhancing after the intravenous administration of gadolinium-based contrast agent (IV-GBCA). We noticed that the PVS sometimes has high signal intensity (SI) on heavily T2-weighted 3D-FLAIR (hT2-FL) images obtained 4 h after IV-GBCA. The purpose of this study was to retrospectively evaluate the contrast enhancement of the PVS. Materials and Methods: In 8 healthy subjects and 19 patients with suspected endolymphatic hydrops, magnetic resonance cisternography (MRC) and hT2-FL images were obtained before and 4 h after a single dose of IV-GBCA. No subjects had renal insufficiency. On axial MRC at the level of the anterior commissure (AC)-posterior commissure (PC) line, 1 cm circular regions of interest (ROIs) were drawn centering on the PVS in the bilateral basal ganglia and thalami. Three-millimeter diameter ROIs were set in the cerebrospinal fluid (CSF) of the bilateral ambient cistern. The ROIs on MRC were copied onto the hT2-FL images and the SI was measured. The SI ratio (SIR) was defined as SIRPVS = SI of PVS/SI of the thalami, and SIRCSF = SI of CSF/SI of the thalami. The average of the bilateral values was used for the calculation. The SIRCSF, SIRPVS, and SI of the thalami were compared between before and 4 h after IV-GBCA. Results: The SIR was increased significantly from 1.02 ± 0.37 to 2.65 ± 0.82 in the CSF (P < 0.01) and from 1.20 ± 0.35 to 2.13 ± 1.23 in the PVS at 4 h after IV-GBCA (P < 0.01). The SI of the thalami showed no significant difference. Conclusion: The enhancement of the PVS at 4 h after IV-GBCA was confirmed even in subjects without renal insufficiency. It is possible that the GBCA in the blood vessels might have permeated into the cerebrospinal fluid (CSF) space and the PVS. This might be a first step in the imaging evaluation of the glymphatic system (waste clearance system) of the brain. PMID:27430361

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

NASA Technical Reports Server (NTRS)

Mahan, John E.

1989-01-01

Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

Long term variability of B supergiant winds

NASA Technical Reports Server (NTRS)

Massa, Derck L.

1995-01-01

The object of this observing proposal was to sample wind variability in B supergiants on a daily basis over a period of several days in order to determine the time scale with which density variability occurs in their winds. Three stars were selected for this project: 69 Cyg (B0 Ib), HD 164402 (B0 Ib), and HD 47240 (B1 Ib). Three grey scale representations of the Si IV lambda lambda 1400 doublet in each star are attached. In these figures, time (in days) increases upward, and the wavelength (in terms of velocity relative to the rest wavelength of the violet component of the doublet) is the abscissa. The spectra are normalized by a minimum absorption (maximum flux) template, so that all changes appear as absorptions. As a result of these observations, we can now state with some certainty that typical B supergiants develop significant wind inhomogeneities with recurrence times of a few days, and that some of these events show signs of strong temporal coherence.

Periodic molybdenum disc array for light trapping in amorphous silicon layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jiwei; Deng, Changkai; Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China

2016-05-15

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under lightmore » illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.« less

Neutral six-coordinate bis(dithiocarbamato)silicon(iv) complexes with an SiCl2S4 skeleton.

PubMed

Baus, Johannes A; Tacke, Reinhold

2017-07-11

Treatment of SiCl 4 with lithium dithiocarbamates of the formula type Li[R 2 NCS 2 ] (R = Ph, iPr) in a molar ratio of 1 : 2 afforded the respective six-coordinate silicon(iv) complexes [Ph 2 NCS 2 ] 2 SiCl 2 (3) and [iPr 2 NCS 2 ] 2 SiCl 2 (4), which were isolated as the solvates 3·MeCN and 4·MeCN. Compounds 3·MeCN and 4·MeCN were structurally characterised by single-crystal X-ray diffraction and multinuclear NMR spectroscopic studies in the solid state and in solution. In this study, dithiocarbamato ligands were implemented in silicon coordination chemistry for the first time. Compounds 3 and 4 represent the first six-coordinate silicon(iv) complexes with an SiCl 2 S 4 skeleton.

Growth of periodic nano-layers of nano-crystals of Au, Ag, Cu by ion beam

NASA Technical Reports Server (NTRS)

Smith, Cydale C.; Zheng, B.; Muntele, C. I.; Muntele, I. C.; Ila, D.

2005-01-01

Multilayered thin films of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/, were grown by deposition. We have previously shown that MeV ion Bombardment of multi-nano-layers of SiO2/AU+ SiO2/ produces Au nanocrystals in the AU+ SiO2 layers. An increased number of nano-layers followed by MeV ion bombardment produces a wide optical absorption band, of which its FWHM depends on the number of nano-layers of SiO2/AU+ SiO2/. We have successfully repeated this process for nano-layers of SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/. In this work we used 5 MeV Si as the post deposition bombardment ion and monitored the location as well as the optical absorption's FWHM for each layered structure using Optical Absorption Photospectrometry. The concentration and location of the metal nano-crystals were measured by Rutherford Backscattering Spectrometry. We will report on the results obtained for nano-layered structures produced by post deposition bombardment of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/ layered systems as well as the results obtained from a system containing a periodic combination of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/.

Non-equilibrium ionization by a periodic electron beam. II. Synthetic Si IV and O IV transition region spectra

NASA Astrophysics Data System (ADS)

Dzifčáková, Elena; Dudík, Jaroslav

2018-03-01

Context. Transition region (TR) spectra typically show the Si IV 1402.8 Å line to be enhanced by a factor of 5 or more compared to the neighboring O IV 1401.2 Å, contrary to predictions of ionization equilibrium models and the Maxwellian distribution of particle energies. Non-equilibrium effects in TR spectra are therefore expected. Aims: To investigate the combination of non-equilibrium ionization and high-energy particles, we apply the model of the periodic electron beam, represented by a κ-distribution that recurs at periods of several seconds, to plasma at chromospheric temperatures of 104 K. This simple model can approximate a burst of energy release involving accelerated particles. Methods: Instantaneous time-dependent charge states of silicon and oxygen were calculated and used to synthesize the instantaneous and period-averaged spectra of Si IV and O IV. Results: The electron beam drives the plasma out of equilibrium. At electron densities of Ne = 1010 cm-3, the plasma is out of ionization equilibrium at all times in all cases we considered, while for a higher density of Ne = 1011 cm-3, ionization equilibrium can be reached toward the end of each period, depending on the conditions. In turn, the character of the period-averaged synthetic spectra also depends on the properties of the beam. While the case of κ = 2 results in spectra with strong or even dominant O IV, higher values of κ can approximate a range of observed TR spectra. Spectra similar to typically observed spectra, with the Si IV 1402.8 Å line about a factor 5 higher than O IV 1401.2 Å, are obtained for κ = 3. An even higher value of κ = 5 results in spectra that are exclusively dominated by Si IV, with negligible O IV emission. This is a possible interpretation of the TR spectra of UV (Ellerman) bursts, although an interpretation that requires a density that is 1-3 orders of magnitude lower than for equilibrium estimates. Movies associated to Fig. A.1 are available at http://https://www.aanda.org

Exciton-polariton state in nanocrystalline SiC films

NASA Astrophysics Data System (ADS)

Semenov, A. V.; Lopin, A. V.

2016-05-01

We studied the features of optical absorption in the films of nanocrystalline SiC (nc-SiC) obtained on the sapphire substrates by the method of direct ion deposition. The optical absorption spectra of the films with a thickness less than ~500 nm contain a maximum which position and intensity depend on the structure and thickness of the nc-SiC films. The most intense peak at 2.36 eV is observed in the nc-SiC film with predominant 3C-SiC polytype structure and a thickness of 392 nm. Proposed is a resonance absorption model based on excitation of exciton polaritons in a microcavity. In the latter, under the conditions of resonance, there occurs strong interaction between photon modes of light with λph=521 nm and exciton of the 3С polytype with an excitation energy of 2.36 eV that results in the formation of polariton. A mismatch of the frequencies of photon modes of the cavity and exciton explains the dependence of the maximum of the optical absorption on the film thickness.

Cs(2)K(UO)(2)Si(4)O(12): a mixed-valence uranium(IV,V) silicate.

PubMed

Lee, Cheng-Shiuan; Wang, Sue-Lein; Lii, Kwang-Hwa

2009-10-28

The first mixed-valence uranium(IV,V) silicate is synthesized under high-temperature, high-pressure hydrothermal conditions. The structure contains chains of corner-sharing U(IV,V)O(6) octahedra which are interconnected by Si(4)O(12) four-membered rings to form a 3-D framework. XPS and XANES spectra were measured to identify the valence state of uranium.

Effect of Garlic, Gingko, and St. John's Wort Extracts on the Pharmacokinetics of Fexofenadine: A Mechanistic Study.

PubMed

Turkanovic, Jasmina; Ward, Michael B; Gerber, Jacobus P; Milne, Robert W

2017-05-01

The aim of this study was to determine the effects of garlic and ginkgo herbal extracts on the pharmacokinetics of the P-glycoprotein (P-gp)/organic anion-transporting polypeptides (Oatps) substrate fexofenadine. Male rats were dosed orally with garlic (120 mg/kg), ginkgo (17 mg/kg), St. John's wort (SJW; 1000 mg/kg; positive control), or Milli-Q water for 14 days. On day 15, rats either were administered fexofenadine (orally or i.v.), had their livers isolated and perfused with fexofenadine, or had their small intestines divided into four segments (SI-SIV) and analyzed for P-gp and Oatp1a5. In vivo, SJW increased the clearance of i.v. administered fexofenadine by 28%. Garlic increased the area under the curve 0-∞ and maximum plasma concentration of orally administered fexofenadine by 47% and 85%, respectively. Ginkgo and SJW had no effect on the oral absorption of fexofenadine. In the perfused liver, garlic, ginkgo, and SJW increased the biliary clearance of fexofenadine with respect to perfusate by 71%, 121%, and 234%, respectively. SJW increased the biliary clearance relative to the liver concentration by 64%. The ratio of liver to perfusate concentrations significantly increased in all treated groups. The expression of Oatp1a5 in SI was increased by garlic (88%) and SJW (63%). There were no significant changes in the expression of P-gp. Induction of intestinal Oatp1a5 by garlic may explain the increased absorption of orally administered fexofenadine. Ginkgo had no effect on the expression of intestinal P-gp or Oatp1a5. A dual inductive effect by SJW on opposing intestinal epithelial transport by Oatp1a5 and P-gp remains a possibility. Copyright © 2017 by The American Society for Pharmacology and Experimental Therapeutics.

Shock-tube studies of silicon-compound vapors

NASA Technical Reports Server (NTRS)

Park, C.; Fujiwara, T.

1977-01-01

Test gas mixtures containing SiO, SiO2, Si2, and SiH were produced in a shock tube by processing shock waves through a mixture of SiCl4 + N2O + Ar, SiH4 + Ar, or SiH4 + O2 + Ar. Absorption spectra of the test gases were studied photographically in the reflected shock region using a xenon flash lamp as the light source in the range of wavelengths between 250 and 600 nm. SiO was found to be a dominant species in the vapors produced by the SiCl4 + N2O and SiH4 + O2 mixtures. Spontaneous combustion was observed in the SiH4 + O2 + Ar mixture prior to the shock arrival, and the resulting solid SiO2 particles evaporated behind the shock wave. Spectral absorption characteristics of SiO, SiO2, Si2, and SiH were determined by studying the test gases.

Insights into quasar UV spectra using unsupervised clustering analysis

NASA Astrophysics Data System (ADS)

Tammour, A.; Gallagher, S. C.; Daley, M.; Richards, G. T.

2016-06-01

Machine learning techniques can provide powerful tools to detect patterns in multidimensional parameter space. We use K-means - a simple yet powerful unsupervised clustering algorithm which picks out structure in unlabelled data - to study a sample of quasar UV spectra from the Quasar Catalog of the 10th Data Release of the Sloan Digital Sky Survey (SDSS-DR10) of Paris et al. Detecting patterns in large data sets helps us gain insights into the physical conditions and processes giving rise to the observed properties of quasars. We use K-means to find clusters in the parameter space of the equivalent width (EW), the blue- and red-half-width at half-maximum (HWHM) of the Mg II 2800 Å line, the C IV 1549 Å line, and the C III] 1908 Å blend in samples of broad absorption line (BAL) and non-BAL quasars at redshift 1.6-2.1. Using this method, we successfully recover correlations well-known in the UV regime such as the anti-correlation between the EW and blueshift of the C IV emission line and the shape of the ionizing spectra energy distribution (SED) probed by the strength of He II and the Si III]/C III] ratio. We find this to be particularly evident when the properties of C III] are used to find the clusters, while those of Mg II proved to be less strongly correlated with the properties of the other lines in the spectra such as the width of C IV or the Si III]/C III] ratio. We conclude that unsupervised clustering methods (such as K-means) are powerful methods for finding `natural' binning boundaries in multidimensional data sets and discuss caveats and future work.

Designing metal hemispheres on silicon ultrathin film solar cells for plasmonic light trapping.

PubMed

Gao, Tongchuan; Stevens, Erica; Lee, Jung-kun; Leu, Paul W

2014-08-15

We systematically investigate the design of two-dimensional silver (Ag) hemisphere arrays on crystalline silicon (c-Si) ultrathin film solar cells for plasmonic light trapping. The absorption in ultrathin films is governed by the excitation of Fabry-Perot TEMm modes. We demonstrate that metal hemispheres can enhance absorption in the films by (1) coupling light to c-Si film waveguide modes and (2) exciting localized surface plasmon resonances (LSPRs). We show that hemisphere arrays allow light to couple to fundamental TEm and TMm waveguide modes in c-Si film as well as higher-order versions of these modes. The near-field light concentration of LSPRs also may increase absorption in the c-Si film, though these resonances are associated with significant parasitic absorption in the metal. We illustrate how Ag plasmonic hemispheres may be utilized for light trapping with 22% enhancement in short-circuit current density compared with that of a bare 100 nm thick c-Si ultrathin film solar cell.

Birefringence and anisotropic optical absorption in porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Efimova, A. I., E-mail: efimova@vega.phys.msu.ru; Krutkova, E. Yu.; Golovan', L. A.

2007-10-15

The refractive indices and the coefficients of optical absorption by free charge carriers and local vibrations in porous silicon (por-Si) films, comprising nanometer-sized silicon residues (nanocrystals) separated by nanometer-sized pores (nanopores) formed in the course of electrochemical etching of the initial single crystal silicon, have been studied by polarization-resolved IR absorption spectroscopy techniques. It is shown that the birefringence observed in por-Si is related to the anisotropic shapes of nanocrystals and nanopores, while the anisotropy (dichroism) of absorption by the local vibrational modes is determined predominantly by the microrelief of the surface of nanocrystals. It is demonstrated that silicon-hydrogen surfacemore » bonds in nanocrystals can be restored by means of selective hydrogen thermodesorption with the formation of a considerable number of H-terminated surface Si-Si dimers.« less

X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

NASA Astrophysics Data System (ADS)

Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

2018-06-01

Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

NASA Technical Reports Server (NTRS)

Elsamadicy, A. M.; Ila, D.; Zimmerman, R.; Muntele, C.; Evelyn, L.; Muntele, I.; Poker, D. B.; Hensley, D.; Hirvonen, J. K.; Demaree, J. D.;

Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

DTIC Science & Technology

2006-12-01

single layer Si0 2 with similar EOT [19]. In Fig. 2, the solid symbols represent the typical I-V characteristics of an AI/(HfON-Si3N4)/Si structure. The...black curve (with open symbols ) is a simulated I-V curve for theoretical Si0 2 with the same EOT. It can be seen clearly that it takes only 3 volts for...R. Wasser , B. Reichenberg, and S. Tiedke, "Resistive switching mechanism of TiO 2 thin films grown by atomic-layer deposition", J. App/. Phys., vol

Photocatalytic activity of silicon-based nanoflakes for the decomposition of nitrogen monoxide.

PubMed

Itahara, Hiroshi; Wu, Xiaoyong; Imagawa, Haruo; Yin, Shu; Kojima, Kazunobu; Chichibu, Shigefusa F; Sato, Tsugio

2017-07-04

The photocatalytic decomposition of nitrogen monoxide (NO) was achieved for the first time using Si-based nanomaterials. Nanocomposite powders composed of Si nanoflakes and metallic particles (Ni and Ni 3 Si) were synthesized using a simple one-pot reaction of layered CaSi 2 and NiCl 2 . The synthesized nanocomposites have a wide optical absorption band from the visible to the ultraviolet. Under the assumption of a direct transition, the photoabsorption behavior is well described and an absorption edge of ca. 1.8 eV is indicated. Conventional Si and SiO powders with indirect absorption edges of 1.1 and 1.4 eV, respectively, exhibit considerably low photocatalytic activities for NO decomposition. In contrast, the synthesized nanocomposites exhibited photocatalytic activities under irradiation with light at wavelengths >290 nm (<4.28 eV). The photocatalytic activities of the nanocomposites were confirmed to be constant and did not degrade with the light irradiation time.

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

NASA Astrophysics Data System (ADS)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer

NASA Astrophysics Data System (ADS)

Yakimov, A. I.; Nikiforov, A. I.; Timofeev, V. A.; Dvurechenskii, A. V.

2011-12-01

A combined infrared absorption and admittance spectroscopy is carried out in examining the energy level structure and the hole emission process in self-assembled Ge quantum dots (QDs) placed on a strained Si0.65Ge0.35 quantum well (QW), which, in turn, is incorporated in a Si matrix. In the midinfrared spectral range, the dots exhibit three dominant absorption bands peaked at 130, 250 and 390 meV. By a comparison between absorption measurements and six-band {\\bf k}\\;{\\bm \\cdot}\\;{\\bf p} calculations, the long-wave (~130 meV) resonance is attributed to a transition from the QD hole ground state to the two-dimensional heavy-hole states confined in the Si0.65Ge0.35 layer. The mid-wave absorption band around 390 meV is ascribed to a transition from the QD hole ground state to the three-dimensional continuum states of the Si matrix. An equivalent absorption cross section for these two types of transitions is determined to be 1.2 × 10-15 cm2 and 1.2 × 10-16 cm2, respectively. The origin of the transmission minimum around 250 meV is more ambiguous. We tentatively propose that it can be due to transition either from the highest heavy-hole subband of the Si0.65Ge0.35 QW to continuum states above the Si barrier or from the dot states to the light-hole and split-off subbands of the Si0.65Ge0.35 layer. The photoinduced bleaching of the near-infrared absorption is detected under interband optical excitation of undoped samples. This finding is explained by blocking the interband transitions inside the dots due to the state filling effect. By using the admittance spectroscopy, the mechanism of hole escape from QDs in the presence of an ac vertical electric field is identified. A thermally activated emission from the QD ground state into the two-dimensional states of the Si0.65Ge0.35 well is observed. From the temperature- and frequency-dependent measurements the QD hole ground state is determined to be located ~160 meV below the heavy-hole subband of the Si0.65Ge0.35 layer in good agreement with the results obtained by infrared absorption spectroscopy and six-band {\\bf k}\\;{\\bm \\cdot}\\;{\\bf p} theory. The information acquired from our experimental observations is valuable for feasible device applications.

Multiresponsive polysiloxane bearing spiropyran: synthesis and sensing of pH and metal ions of different valence

NASA Astrophysics Data System (ADS)

Li, Hongqi; Zheng, Tao; Zhao, Yong; Xu, Zhenxiang; Dai, Xuhang; Shao, Zhiyu

2018-03-01

A spiropyran-appended polysiloxane (SP-Si) was synthesized and characterized. The pH-responsive behavior of SP-Si was investigated. It was found that with the decrease of the pH of SP-Si solution the intensity of the absorption peak at 440 nm increased and the color of SP-Si solution turned from colorless to yellow gradually. The polymer serves as chemosensor for colorimetric detection of Ag+ and Fe3+ ions. Addition of Ag+ and Fe3+ ions to SP-Si solution induced color change from colorless to brown and earthy yellow, respectively. Sensing of Ag+ ions by SP-Si was not affected by common competitive metal ions except Hg2+ ions. Based on the transformation from colorless SP-Si solution with negligible absorption at 440 nm to brown SP-Si/Ag+ showing extremely strong absorption at 440 nm by addition of Ag+ ions and subsequent transformation from brown to colorless SP-Si/Ag+/Hg2+ with relatively weak absorption at 440 nm after addition of 1 equivalent of Hg2+ ions, SP-Si/Ag+ system serves as a dual colorimetric and spectroscopic probe for highly selective and sensitive detection of Hg2+ ions. The selective detection of Fe3+ ions by SP-Si is not interfered by common competitive metal ions including Na+, K+, Li+, Hg2+, Ni2+, Fe2+, Zn2+, Co2+, Sr2+, Cu2+, Al3+, Ce3+ and Cr3+. The detection limit of Ag+ and Fe3+ ions is 1.45 × 10-6 M and 3.52 × 10-6 M, respectively.

Phytoplankton-Environmental Interactions in Reservoirs. Volume II. Discussion of Workshop Papers and Open Literature.

DTIC Science & Technology

1981-09-01

Springfield, Va. 22151. II. KEY WORDS (Continue on revere side it necessary and Id lltv by block number) Environmental effects Marine plants Phytoplankton...NITROGEN AND PHOSPHORUS ........ ................. 73 IV-4 HALF-SATURATION CONSTANTS FOR N, P, AND Si UPTAKE (PM) REPORTED FOR MARINE AND FRESHWATER...PLANKTON ALGAE . . . . 74 IV-5 MINIMUM CELL NUTRIENT QUOTAS (OIMOLES CELL - ) OF PM Si, AND N FOR SOME MARINE AND FRESHWATER PHYTOPLANKTON . . . 75 IV

Fabrication of Spherical AlSi10Mg Powders by Radio Frequency Plasma Spheroidization

NASA Astrophysics Data System (ADS)

Wang, Linzhi; Liu, Ying; Chang, Sen

2016-05-01

Spherical AlSi10Mg powders were prepared by radio frequency plasma spheroidization from commercial AlSi10Mg powders. The fabrication process parameters and powder characteristics were investigated. Field emission scanning electron microscope, X-ray diffraction, laser particle size analyzer, powder rheometer, and UV/visible/infrared spectrophotometer were used for analyses and measurements of micrographs, phases, granulometric parameters, flowability, and laser absorption properties of the powders, respectively. The results show that the obtained spherical powders exhibit good sphericity, smooth surfaces, favorable dispersity, and excellent fluidity under appropriate feeding rate and flow rate of carrier gas. Further, acicular microstructures of the spherical AlSi10Mg powders are composed of α-Al, Si, and a small amount of Mg2Si phase. In addition, laser absorption values of the spherical AlSi10Mg powders increase obviously compared with raw material, and different spectra have obvious absorption peaks at a wavelength of about 826 nm.

First-principles calculation on electronic structure and optical property of BaSi{sub 2}O{sub 2}N{sub 2}:Eu{sup 2+} phosphor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, Zhi-Fang, E-mail: tongzhifang1998@126.com; Wei, Zhan-Long; Xiao, Cheng

The crystal structure, electronic structure and optical properties of BaSi{sub 2}O{sub 2}N{sub 2}:Eu{sup 2+} with varying Eu doping concentrations are computed by the density functional theory (DFT) and compared with experimental results. The results show that the lattice parameters of primitive cells of Ba{sub 1−x}Si{sub 2}O{sub 2}N{sub 2}:Eu{sub x} become smaller and Eu–N bond length shortens as Eu concentration increases. The band structure of Ba{sub 1−x}Si{sub 2}O{sub 2}N{sub 2}:Eu{sub x} exhibits a direct optical band gap and it's propitious to luminescence. The energy differences from the lowest Eu 5d state to the lowest Eu 4f state decrease with increasing Eumore » concentrations. The analysis of simulative absorption spectra indicates that the electron transition from Eu 4f states to 5d states of both Eu and Ba atoms contributes to the absorption of Ba{sub 1−x}Si{sub 2}O{sub 2}N{sub 2}:Eu{sub x}. Under the coupling effect between Eu and Ba, Ba in BaSi{sub 2}O{sub 2}N{sub 2} exhibits longer wavelength absorption and increases absorption efficiency. The emission wavelength is deduced by measuring energy differences from the lowest Eu 5d state to the lowest Eu 4f state, and the result is in good agreement with experimental value within experimental Eu{sup 2+} doping range. - Graphical abstract: The structure and optical property of BaSi{sub 2}O{sub 2}N{sub 2}:Eu{sup 2+} are computed by DFT and its absorption mechanism is analysed. Results show that absorption peak α is from the host lattice absorption. The absorption peaks β, γ and δ are from Eu 4f to Eu 5d and Ba 6s 5d states. The absorption is attributed to the coupling effect of Eu and Ba atom. - Highlights: • The crystal, electronic structure and optical properties of BaSi{sub 2}O{sub 2}N{sub 2}:Eu{sup 2+} are computed by DFT. • The lattice parameters of primitive cells reduces and Eu–N bond length shortens as Eu{sup 2+} increases. • The energy gap from Eu 5d state to Eu 4f state decrease with increasing Eu concentrations. • Both Eu and Ba atoms contributes to the absorption of Ba{sub 1−x}Si{sub 2}O{sub 2}N{sub 2}:Eu{sub x}. • The deduced emission wavelength is in good agreement with experimental value.« less

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

NASA Astrophysics Data System (ADS)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

PubMed

Park, Seungil; Parida, Bhaskar; Kim, Keunjoo

2013-05-01

We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures. The film samples showed the different infrared absorption spectra of 2,000 and 2,100 cm(-1), which are corresponding to the chemical bonds of SiH and SiH2, respectively. The a-Si:H sample with the relatively high silane concentration provides the absorption peak of SiH bond, but the microc-Si:H sample with the relatively low silane concentration provides the absorption peak of SiH2 bond as well as SiH bond. Furthermore, the microc-Si:H sample showed the Raman spectral shift of 520 cm(-1) for crystalline phase Si bonds as well as the 480 cm(-1) for the amorphous phase Si bonds. These bonding structures are very consistent with the further analysis of the long-wavelength photoconduction tail and the formation of nanocrystalline Si structures. The microc-Si:H thin film solar cell has the photovoltaic behavior of open circuit voltage similar to crystalline silicon thin film solar cell, indicating that microc-Si:H thin film with the mixed phase of amorphous and nanocrystalline structures show the carrier transportation through the channel of nanocrystallites.

Electrical and optical properties of Si-doped Ga2O3

NASA Astrophysics Data System (ADS)

Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

2017-05-01

The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

High-speed Si/GeSi hetero-structure Electro Absorption Modulator.

PubMed

Mastronardi, L; Banakar, M; Khokhar, A Z; Hattasan, N; Rutirawut, T; Bucio, T Domínguez; Grabska, K M; Littlejohns, C; Bazin, A; Mashanovich, G; Gardes, F Y

2018-03-19

The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.

Microwave electromagnetic and absorption properties of SiO2/C core/shell composites plated with metal cobalt

NASA Astrophysics Data System (ADS)

Shen, Guozhu; Fang, Xumin; Wu, Hongyan; Wei, Hongyu; Li, Jingfa; Li, Kaipeng; Mei, Buqing; Xu, Yewen

2017-04-01

A facile method has been developed to fabricate magnetic core/shell SiO2/C/Co sub-microspheres via the pyrolysis of SiO2/PANI (polyaniline) and electroless plating method. The electromagnetic parameters of these SiO2/C and SiO2/C/Co composites were measured and the microwave reflection loss properties were evaluated in the frequency range of 2-18 GHz. The results show that the dielectric loss of SiO2/C composite increases with the increase of carbonization temperature and the magnetic loss enhances due to the deposition of cobalt on the SiO2/C sub-microspheres. The reflection loss results exhibit that the microwave absorption properties of the SiO2/C/Co composites are more excellent than those of SiO2/C composites for each thickness. The maximum effective absorption bandwidth (reflection loss ≤ -10 dB) arrives at 5.0 GHz (13.0-18 GHz) for SiO2/C/Co composite with 1.5 mm of thickness and the minimum reflection loss value is -24.0 dB at 5.0 GHz with 4.0 mm of thickness. The microwave loss mechanism of the SiO2/C/Co composites was also discussed in this paper.

Narrow absorption lines with two observations from the Sloan Digital Sky Survey

NASA Astrophysics Data System (ADS)

Chen, Zhi-Fu; Gu, Qiu-Sheng; Chen, Yan-Mei; Cao, Yue

2015-07-01

We assemble 3524 quasars from the Sloan Digital Sky Survey (SDSS) with repeated observations to search for variations of the narrow C IV λ λ 1548,1551 and Mg II λ λ 2796,2803 absorption doublets in spectral regions shortward of 7000 Å in the observed frame, which corresponds to time-scales of about 150-2643 d in the quasar rest frame. In these quasar spectra, we detect 3580 C IV absorption systems with zabs = 1.5188-3.5212 and 1809 Mg II absorption systems with zabs = 0.3948-1.7167. In term of the absorber velocity (β) distribution in the quasar rest frame, we find a substantial number of C IV absorbers with β < 0.06, which might be connected to absorption of quasar outflows. The outflow absorption peaks at υ ≈ 2000 km s^{-1} and drops rapidly below this peak value. Among 3580 C IV absorption systems, 52 systems (˜1.5 per cent) show obvious variations in equivalent widths in the absorber rest frame (Wr): 16 enhanced, 16 emerged, 12 weakened and 8 disappeared systems, respectively. We find that changes in Wrλ1548 are related neither to the time-scales of the two SDSS observations nor to absorber velocities in the quasar rest frame. Variable absorption in low-ionization species is important to constrain the physical conditions of the absorbing gas. There are two variable Mg II absorption systems measured from SDSS spectra detected by Hacker et al. However, in our Mg II absorption sample, we find that neither shows variable absorption with confident levels of >4σ for λ2796 lines and >3σ for λ2803 lines.

Low-reflective wire-grid polarizers with absorptive interference overlayers.

PubMed

Suzuki, Motofumi; Takada, Akio; Yamada, Takatoshi; Hayasaka, Takashi; Sasaki, Kouji; Takahashi, Eiji; Kumagai, Seiji

2010-04-30

Wire-grid (WG) polarizers with low reflectivity for visible light have been successfully developed. We theoretically consider the optical properties of simple sandwich structures of absorptive layer/transparent layer (gap layer)/high-reflective mirrors and found that it is possible to develop an antireflection (AR) coating owing to the interference along with the absorption in the absorptive layer. A wide variety of materials can be used for AR coatings by tuning the thicknesses of both the absorptive and the gap layers. This AR concept has been applied to reduce the reflectance of WG polarizers of Al. FeSi(2) as an absorptive layer has been deposited by the glancing angle deposition technique immediately on the top of Al wires covered with a thin SiO(2) layer as a gap layer. For the optimum combination of the thicknesses of FeSi(2) and SiO(2), the reflectance becomes lower than a few per cent, independent of the polarization, whereas the transmission polarization properties remain good. Because low-reflective (LR) WG polarizers are completely composed of inorganic materials, they are useful for applications requiring high-temperature durability such as liquid crystal projection displays.

The optical properties of β-FeSi 2 fabricated by ion beam assisted sputtering

NASA Astrophysics Data System (ADS)

McKinty, C. N.; Kewell, A. K.; Sharpe, J. S.; Lourenço, M. A.; Butler, T. M.; Valizadeh, R.; Colligon, J. S.; Reeson Kirkby, K. J.; Homewood, K. P.

2000-03-01

β-FeSi 2 has been shown to have a minimum direct band gap of 0.87 eV [T.D. Hunt, K.J. Reeson, K.P. Homewood, S.W. Teon, R.M. Gwilliam, B.J. Sealy, Nucl. Instr. and Meth. B 84 (1994) 168-171] which leads to the opportunity for Si based opto-electronics, optical communications and optical interconnects. Electroluminescence has been reported from structures containing β-FeSi 2, which were produced by high dose ion implantation and annealing [D. Leong, M.A. Harry, K.J. Reeson, K.P. Homewood, Nature 387 (12 June 1987) 686]. In this paper we report the formation of β-FeSi 2 by ion beam assisted co-sputtering of Fe and Si in varying percentages. The layers were deposited with a varying Fe/Si ratio, with a Si capping layer applied to prevent oxidation. Separate regions of the sample were investigated at room temperature using optical absorption, to measure the band gap values. Absorption under the fundamental edge was also analysed at room temperature. Further investigations looked at the temperature dependence of the band gap and the absorption under the fundamental edge. The results showed that a variety of Fe/Si ratios produced β-FeSi 2, the formation of which was ascertained by the presence of a suitable band gap value [0.83-0.88 eV]. Absorption under the fundamental edge was shown to follow an exponential Urbach tail [C.H. Grein, S. John, Phys. Rev. B 39 (1989) 1140]. The temperature measurements are in good agreement with the Einstein model.

Atomic scale origins of sub-band gap optical absorption in gold-hyperdoped silicon

NASA Astrophysics Data System (ADS)

Ferdous, Naheed; Ertekin, Elif

2018-05-01

Gold hyperdoped silicon exhibits room temperature sub band gap optical absorption, with potential applications as infrared absorbers/detectors and impurity band photovoltaics. We use first-principles density functional theory to establish the origins of the sub band gap response. Substitutional gold AuSi and substitutional dimers AuSi - AuSi are found to be the energetically preferred defect configurations, and AuSi gives rise to partially filled mid-gap defect bands well offset from the band edges. AuSi is predicted to offer substantial sub-band gap absorption, exceeding that measured in prior experiments by two orders of magnitude for similar Au concentration. This suggests that in experimentally realized systems, in addition to AuSi, the implanted gold is accommodated by the lattice in other ways, including other defect complexes and gold precipitates. We further identify that it is energetically favorable for isolated AuSi to form AuSi - AuSi, which by contrast do not exhibit mid-gap states. The formation of dimers and other complexes could serve as nuclei in the earliest stages of Au precipitation, which may be responsible for the observed rapid deactivation of sub-band gap response upon annealing.

Surfactant-assisted hydrothermal crystallization of nanostructured lithium metasilicate (Li{sub 2}SiO{sub 3}) hollow spheres: II-Textural analysis and CO{sub 2}-H{sub 2}O sorption evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ortiz-Landeros, Jose; Gomez-Yanez, Carlos; Pfeiffer, Heriberto, E-mail: pfeiffer@iim.unam.mx

In a previous work, the synthesis and structural-microstructural characterization of different nanocrystalline lithium metasilicate (Li{sub 2}SiO{sub 3}) samples were performed. Then, in this work, initially, a textural analysis was performed over the same samples. Li{sub 2}SiO{sub 3} samples prepared with a non-ionic surfactant (TRITON X-114) presented the best textural properties. Therefore, this sample was selected to evaluate its water vapor (H{sub 2}O) and carbon dioxide (CO{sub 2}) sorption properties. Sorption experiments were performed at low temperatures (30-80 deg. C) in presence of water vapor using N{sub 2} or CO{sub 2} as carrier gases. Results clearly evidenced that CO{sub 2} sorptionmore » on these materials is highly improved by H{sub 2}O vapor, and of course, textural properties enhanced the H{sub 2}O-CO{sub 2} sorption efficiency, in comparison with the solid-state reference sample. - Graphical abstract: Li{sub 2}SiO{sub 3} varied significantly its capacity of CO{sub 2} absorption as a function of the microstructural properties and by the water presence. Highlights: > We studied the CO{sub 2} absorption on different Li{sub 2}SiO{sub 3} samples in presence of H{sub 2}O vapor. > It was proved that CO{sub 2} absorption on Li{sub 2}SiO{sub 3} is controlled by different factors. > Li{sub 2}SiO{sub 3} with a porous microstructure produces a higher CO{sub 2} absorption. > H{sub 2}O vapor favors the CO{sub 2} absorption on Li{sub 2}SiO{sub 3} due to a surface hydroxylation.« less

Hydrogenation properties of KSi and NaSi Zintl phases.

PubMed

Tang, Wan Si; Chotard, Jean-Noël; Raybaud, Pascal; Janot, Raphaël

2012-10-14

The recently reported KSi-KSiH(3) system can store 4.3 wt% of hydrogen reversibly with slow kinetics of several hours for complete absorption at 373 K and complete desorption at 473 K. From the kinetics measured at different temperatures, the Arrhenius plots give activation energies (E(a)) of 56.0 ± 5.7 kJ mol(-1) and 121 ± 17 kJ mol(-1) for the absorption and desorption processes, respectively. Ball-milling with 10 wt% of carbon strongly improves the kinetics of the system, i.e. specifically the initial rate of absorption becomes about one order of magnitude faster than that of pristine KSi. However, this fast absorption causes a disproportionation into KH and K(8)Si(46), instead of forming the KSiH(3) hydride from a slow absorption. This disproportionation, due to the formation of stable KH, leads to a total loss of reversibility. In a similar situation, when the pristine Zintl NaSi phase absorbs hydrogen, it likewise disproportionates into NaH and Na(8)Si(46), indicating a very poorly reversible reaction.

Seeing High Velocity Clouds and Turbulent Mixing Layers in the Ultraviolet: Predictions from Hydrodynamic Simulations

NASA Astrophysics Data System (ADS)

Shelton, Robin L.

2018-06-01

High velocity clouds (HVCs) and turbulent mixing layers (TMLs) emit light across a wide range of wavelengths. In order to aid in the detection of their ultraviolet emission, we predict the UV emission line intensities emitted by C II, C III, C IV, N II, N III, N IV, N V, O III, O IV, O V, O VI, Si II, Si III, and Si IV in a variety of simulated HVCs and TMLs. These predictions are based on detailed hydrodynamic simulations made with the FLASH code and employing non-equilibrium ionization calculations for carbon, nitrogen, oxygen, and silicon. The results are compared with FUSE and SPEAR/FIMS observations and with predictions from other models of hot/cool interfaces. We also present methods for scaling the results so that they can be applied to more or less dense environments.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films.

PubMed

Nikitin, Timur; Khriachtchev, Leonid

2015-04-22

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si-SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ∼300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas.

Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

AL-Zoubi, Omar H.

Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we found that the optical properties of SiNW arrays are strongly affected by the radial diversity, the arrangement of SiNW in a lattice, and the configuration of such lattice. The proper selection of these parameters leads to broaden and enhance the light absorption of the SiNW arrays. Inspired by natural configurations, fractal geometry and diamond lattice structures, we introduced two lattice configurations: fractal-like array (FLA) that is inspired by fractal geometry, and diamond-like array (DLA) that is inspired by diamond crystal lattice structure. Optimization, using parametric analysis, of the introduced arrays parameters for the light absorption level and the amount of used material has been performed. Both of the introduced SiNW arrays show broadband, strong light absorption coupled with reduction of the amount of the used material. DLA in specific showed significantly enhanced absorption covering the entire solar spectrum of interest, where near-unity absorption spectrum could be achieved. We studied the optical properties of complete PVSC devices that are based on SiNW array. Moreover, the performance of PVSC device that is based on SiNW has been investigated by using numerical modeling. SILVACO software package is used for performing the numerical simulation of the PVSC device performance, which can simultaneously handle the different coupled physical mechanisms contributing to the photovoltaic effect. The effect of the geometry of PVSC device that is based on SiNW is investigated, which shows that the geometry of such PVSC has a role in enhancing its electrical properties. The outcome of this study introduces new SiNW array configurations that have enhanced optical properties using a low amount of material that can be utilized for producing higher efficiency thin film PVCS. The overall conclusion of this work is that a weak absorption indirect band gap material, silicon, in the form of properly designed SiNW and SiNC arrays has the potentials to achieve near-unity ideal absorption spectrum using reduced amount of material, which can lead to produce new generation of lower cost and enhanced efficiency thin film PVSC.

Femtosecond transient absorption spectroscopy of silanized silicon quantum dots

NASA Astrophysics Data System (ADS)

Kuntermann, Volker; Cimpean, Carla; Brehm, Georg; Sauer, Guido; Kryschi, Carola; Wiggers, Hartmut

2008-03-01

Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of 4nm were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from 0.3psto2.3ns using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a 150fs pump pulse at 390nm was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within 0.6ps . Exciton capturing by surface states forming shallow traps in the amorphous SiOx shell was found to occur with a time constant of 4ps , whereas deeper traps presumably localized in the Si-SiOx interface gave rise to exciton trapping processes with time constants of 110 and 180ps . Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots (>2nm) was observed to take place within 400 or 700fs .

Spaceborne Sun-Induced Vegetation Fluorescence Time Series from 2007 to 2015 Evaluated with Australian Flux Tower Measurements

NASA Technical Reports Server (NTRS)

Sanders, Abram F. J.; Verstraeten, Willem W.; Kooreman, Maurits L.; van Leth, Thomas C.; Beringer, Jason; Joiner, Joanna

2016-01-01

A global, monthly averaged time series of Sun-induced Fluorescence (SiF), spanning January 2007 to June 2015, was derived from Metop-A Global Ozone Monitoring Experiment 2 (GOME-2) spectral measurements. Far-red SiF was retrieved using the filling-in of deep solar Fraunhofer lines and atmospheric absorption bands based on the general methodology described by Joiner et al, AMT, 2013. A Principal Component (PC) analysis of spectra over non-vegetated areas was performed to describe the effects of atmospheric absorption. Our implementation (SiF KNMI) is an independent algorithm and differs from the latest implementation of Joiner et al, AMT, 2013 (SiF NASA, v26), because we used desert reference areas for determining PCs (as opposed to cloudy ocean and some desert) and a wider fit window that covers water vapour and oxygen absorption bands (as opposed to only Fraunhofer lines). As a consequence, more PCs were needed (35 as opposed to 12). The two time series (SiF KNMI and SiF NASA, v26) correlate well (overall R of 0.78) except for tropical rain forests. Sensitivity experiments suggest the strong impact of the water vapour absorption band on retrieved SiF values. Furthermore, we evaluated the SiF time series with Gross Primary Productivity (GPP) derived from twelve flux towers in Australia. Correlations for individual towers range from 0.37 to 0.84. They are particularly high for managed biome types. In the de-seasonalized Australian SiF time series, the break of the Millennium Drought during local summer of 2010/2011 is clearly observed.

Optical Properties of TiO2-SiO2 Glass Over a Wide Spectral Range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith,D.; Black, C.; Homes, C.

Optical properties of vitreous SiO{sub 2} with 7.4 wt.% TiO{sub 2} are found by dispersion analysis of reflectivity measured in the infrared, visible, and ultraviolet augmented with literature values of vacuum-ultraviolet reflectivity and absorption. The principal infrared absorption associated with the titanium dopant occurs at 950 cm{sup -1} in a deep minimum of the host silica absorption. We attribute this to a perturbation of the silica's absorption at 1076 cm{sup -1} involving oxygen atoms bridging SiO{sub 4} and TiO{sub 4} tetrahedra. Strong ultraviolet absorptions of Ti{sup 4+} occur just below the silica exciton peak between 5.5 and 7.8 eV. Wemore » attribute these to charge-transfer transitions at TiO{sub 4} tetrahedra; i.e., bound excitons consisting of a Ti{sup 3+} ion and a hole shared by four oxygen neighbours.« less

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

PubMed Central

Nikitin, Timur; Khriachtchev, Leonid

2015-01-01

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas. PMID:28347028

A Si IV/O IV Electron Density Diagnostic for the Analysis of IRIS Solar Spectra

NASA Astrophysics Data System (ADS)

Young, P. R.; Keenan, F. P.; Milligan, R. O.; Peter, H.

2018-04-01

Solar spectra of ultraviolet bursts and flare ribbons from the Interface Region Imaging Spectrograph (IRIS) have suggested high electron densities of > {10}12 cm‑3 at transition region temperatures of 0.1 MK, based on large intensity ratios of Si IV λ1402.77 to O IV λ1401.16. In this work, a rare observation of the weak O IV λ1343.51 line is reported from an X-class flare that peaked at 21:41 UT on 2014 October 24. This line is used to develop a theoretical prediction of the Si IV λ1402.77 to O IV λ1401.16 ratio as a function of density that is recommended to be used in the high-density regime. The method makes use of new pressure-dependent ionization fractions that take account of the suppression of dielectronic recombination at high densities. It is applied to two sequences of flare kernel observations from the October 24 flare. The first shows densities that vary between 3× {10}12 and 3× {10}13 cm‑3 over a seven-minute period, while the second location shows stable density values of around 2× {10}12 cm‑3 over a three-minute period.

Evidence that 50% of BALQSO Outflows Are Situated at Least 100 pc from the Central Source

NASA Astrophysics Data System (ADS)

Arav, Nahum; Liu, Guilin; Xu, Xinfeng; Stidham, James; Benn, Chris; Chamberlain, Carter

2018-04-01

The most robust way for determining the distance of quasar absorption outflows is the use of troughs from ionic excited states. The column density ratio between the excited and resonance states yields the outflow number density. Combined with a knowledge of the outflow’s ionization parameter, a distance from the central source (R) can be determined. Here we report results from two surveys targeting outflows that show troughs from S IV. One survey includes 1091 SDSS and BOSS quasar spectra, and the other includes higher-quality spectra of 13 quasars observed with the Very Large Telescope. Our S IV samples include 38 broad absorption line (BAL) outflows and four mini-BAL outflows. The S IV is formed in the same physical region of the outflow as the canonical outflow-identifying species C IV. Our results show that S IV absorption is only detected in 25% of C IV BAL outflows. The smaller detection fraction is due to the higher total column density (N H) needed to detect S IV absorption. Since R empirically anticorrelates with N H, the results of these surveys can be extrapolated to C IV quasar outflows with lower N H as well. We find that at least 50% of quasar outflows are at distances larger than 100 pc from the central source, and at least 12% are at distances larger than 1000 pc. These results have profound implications for the study of the origin and acceleration mechanism of quasar outflows and their effects on the host galaxy.

Controlling the size and optical properties of ZnO nanoparticles by capping with SiO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babu, K. Sowri, E-mail: sowribabuk@gmail.com; Reddy, A. Ramachandra; Reddy, K. Venugopal

Graphical abstract: - Highlights: • Small and uniform sized ZnO nanoparticles were obtained with SiO{sub 2} coating. • ZnO and ZnO–SiO{sub 2} nanocomposite exhibited excitation wavelength dependent PL. • Maximum UV emission intensity was obtained with 353 nm excitation wavelength. • Excitation processes in SiO{sub 2} were also contributed to the UV intensity. • It was found that oxygen vacancies and interstitials enhanced with SiO{sub 2} coating. - Abstract: The size and shape of the ZnO nanoparticles synthesized through sol–gel method were controlled by capping with SiO{sub 2}. X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM) and Highmore » Resolution Transmission Electron Microscope (HR-TEM) results demonstrated that the particle growth of the ZnO nanoparticles has been restricted to 5 nm with SiO{sub 2} capping. As a result, the absorption spectra of ZnO nanoparticles capped with SiO{sub 2} got blue shifted (toward lower wavelength side) due to strong quantum confinement effects. BET (Brunauer–Emmet–Teller) surface area pore size analyzer results showed that surface area of samples increased monotonously with increase of SiO{sub 2} concentration. It was observed that the absorption spectra of ZnO capped with SiO{sub 2} broadened with increase of SiO{sub 2} concentration. Absorption and photoluminescence excitation results (PLE) confirmed that this broadening is due to the absorption of non-bridging oxygen hole centers (NBOHC) of SiO{sub 2}. These results also indicated that ZnO nanoparticles capped with SiO{sub 2} are insensitive to Raman scattering. Maximum UV emission intensity was achieved with 353 nm excitation wavelength compared to 320 nm in ZnO as well as in SiO{sub 2} capped ZnO nanoparticles. Furthermore, there is an enhancement in the intensities of emission peaks related to oxygen vacancies and interstitials with SiO{sub 2} capping. The enhancement in the UV intensity is attributed to the surface passivation of ZnO nanoparticles and excitation processes in SiO{sub 2}.« less

Non-Maxwellian Analysis of the Transition-region Line Profiles Observed by the Interface Region Imaging Spectrograph

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dudík, Jaroslav; Dzifčáková, Elena; Polito, Vanessa

2017-06-10

We investigate the nature of the spectral line profiles for transition-region (TR) ions observed with the Interface Region Imaging Spectrograph (IRIS) . In this context, we analyzed an active-region observation performed by IRIS in its 1400 Å spectral window. The TR lines are found to exhibit significant wings in their spectral profiles, which can be well fitted with a non-Maxwellian κ distribution. The fit with a κ distribution can perform better than a double-Gaussian fit, especially for the strongest line, Si iv 1402.8 Å. Typical values of κ found are about 2, occurring in a majority of spatial pixels wheremore » the TR lines are symmetric, i.e., the fit can be performed. Furthermore, all five spectral lines studied (from Si iv, O iv, and S iv) appear to have the same full-width at half-maximum irrespective of whether the line is an allowed or an intercombination transition. A similar value of κ is obtained for the electron distribution by the fitting of the line intensities relative to Si iv 1402.8 Å, if photospheric abundances are assumed. The κ distributions, however, do not remove the presence of non-thermal broadening. Instead, they actually increase the non-thermal width. This is because, for κ distributions, TR ions are formed at lower temperatures. The large observed non-thermal width lowers the opacity of the Si iv line sufficiently enough for this line to become optically thin.« less

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

PubMed

Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

2017-06-27

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

Mesoporous fluorocarbon-modified silica aerogel membranes enabling long-term continuous CO2 capture with large absorption flux enhancements.

PubMed

Lin, Yi-Feng; Chen, Chien-Hua; Tung, Kuo-Lun; Wei, Te-Yu; Lu, Shih-Yuan; Chang, Kai-Shiun

2013-03-01

The use of a membrane contactor combined with a hydrophobic porous membrane and an amine absorbent has attracted considerable attention for the capture of CO2 because of its extensive use, low operational costs, and low energy consumption. The hydrophobic porous membrane interface prevents the passage of the amine absorbent but allows the penetration of CO2 molecules that are captured by the amine absorbent. Herein, highly porous SiO2 aerogels modified with hydrophobic fluorocarbon functional groups (CF3 ) were successfully coated onto a macroporous Al2 O3 membrane; their performance in a membrane contactor for CO2 absorption is discussed. The SiO2 aerogel membrane modified with CF3 functional groups exhibits the highest CO2 absorption flux and can be continuously operated for CO2 absorption for extended periods of time. This study suggests that a SiO2 aerogel membrane modified with CF3 functional groups could potentially be used in a membrane contactor for CO2 absorption. Also, the resulting hydrophobic SiO2 aerogel membrane contactor is a promising technology for large-scale CO2 absorption during the post-combustion process in power plants. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications.

PubMed

Lin, Chenxi; Povinelli, Michelle L

2009-10-26

In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100 nm to 600 nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600 nm and wire diameter of 540 nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles.

Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

NASA Astrophysics Data System (ADS)

Cansizoglu, Hilal; Gao, Yang; Ghandiparsi, Soroush; Kaya, Ahmet; Perez, Cesar Bartolo; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

2017-08-01

Nanostructures allow broad spectrum and near-unity optical absorption and contributed to high performance low-cost Si photovoltaic devices. However, the efficiency is only a few percent higher than a conventional Si solar cell with thicker absorption layers. For high speed surface illuminated photodiodes, the thickness of the absorption layer is critical for short transit time and RC time. Recently a CMOS-compatible micro/nanohole silicon (Si) photodiode (PD) with more than 20 Gb/s data rate and with 52 % quantum efficiency (QE) at 850 nm was demonstrated. The achieved QE is over 400% higher than a similar Si PD with the same thickness but without absorption enhancement microstructure holes. The micro/nanoholes increases the QE by photon trapping, slow wave effects and generate a collective assemble of modes that radiate laterally, resulting in absorption enhancement and therefore increase in QE. Such Si PDs can be further designed to enhance the bandwidth (BW) of the PDs by reducing the device capacitance with etched holes in the pin junction. Here we present the BW and QE of Si PDs achievable with micro/nanoholes based on a combination of empirical evidence and device modeling. Higher than 50 Gb/s data rate with greater than 40% QE at 850 nm is conceivable in transceivers designed with such Si PDs that are integrated with photon trapping micro and nanostructures. By monolithic integration with CMOS/BiCMOS integrated circuits such as transimpedance amplifiers, equalizers, limiting amplifiers and other application specific integrated circuits (ASIC), the data rate can be increased to more than 50 Gb/s.

Silicon K-edge XANES spectra of silicate minerals

NASA Astrophysics Data System (ADS)

Li, Dien; Bancroft, G. M.; Fleet, M. E.; Feng, X. H.

1995-03-01

Silicon K-edge x-ray absorption near-edge structure (XANES) spectra of a selection of silicate and aluminosilicate minerals have been measured using synchrotron radiation (SR). The spectra are qualitatively interpreted based on MO calculation of the tetrahedral SiO{4/4-}cluster. The Si K-edge generally shifts to higher energy with increased polymerization of silicates by about 1.3 eV, but with considerable overlap for silicates of different polymerization types. The substitution of Al for Si shifts the Si K-edge to lower energy. The chemical shift of Si K-edge is also sensitive to cations in more distant atom shells; for example, the Si K-edge shifts to lower energy with the substitution of Al for Mg in octahedral sites. The shifts of the Si K-edge show weak correlation with average Si-O bond distance (dSi-O), Si-O bond valence (sSi-O) and distortion of SiO4 tetrahedra, due to the crystal structure complexity of silicate minerals and multiple factors effecting the x-ray absorption processes.

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode.

PubMed

Chang, Wen-Chung; Su, Sheng-Chien; Wu, Chia-Ching

2016-06-30

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current-voltage (I-V) measurements. Nonlinear and rectifying I-V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

In vitro transcription activities of Pol IV, Pol V and RDR2 reveal coupling of Pol IV and RDR2 for dsRNA synthesis in plant RNA silencing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haag, Jeremy R.; Ream, Thomas S.; Marasco, Michelle

2012-12-14

In Arabidopsis, RNA-dependent DNA methylation and transcriptional silencing involves three nuclear RNA polymerases that are biochemically undefined: the presumptive DNA-dependent RNA polymerases, Pol IV and Pol V and the putative RNA-dependent RNA polymerase, RDR2. Here, we demonstrate their RNA polymerase activities in vitro. Unlike Pol II, Pols IV and V require an RNA primer, are insensitive to alpha-amanitin and differ in their ability to displace non-template DNA during transcription. Biogenesis of 24 nt small interfering RNAs (siRNAs) requires both Pol IV and RDR2, which physically associate in vivo. Pol IV does not require RDR2 for activity, but RDR2 is nonfunctionalmore » in the absence of associated Pol IV, suggesting that their coupling explains the channeling of Pol IV transcripts into double-stranded RNAs that are then diced into 24 nt siRNAs.« less

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

NASA Astrophysics Data System (ADS)

Ajay, A.; Lim, C. B.; Browne, D. A.; Polaczyński, J.; Bellet-Amalric, E.; Bleuse, J.; den Hertog, M. I.; Monroy, E.

2017-10-01

In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor in the nanowire geometry. Regarding the ISB characteristics, we report absorption covering 1.45-1.75 μm using Ge-doped quantum wells, with comparable performance to Si-doped planar heterostructures. We also report similar ISB absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing ISB phenomena. The spectral shift of the ISB absorption as a function of the doping concentration due to many body effects confirms that Si and Ge efficiently dope GaN/AlN nanowire heterostructures.

Absorptivity of semiconductors used in the production of solar cell panels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V.; Mikityuk, T. I.

The dependence of the absorptivity of semiconductors on the thickness of the absorbing layer is studied for crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS), and copper gallium diselenide (CuGaSe{sub 2}, CGS). The calculations are performed with consideration for the spectral distribution of AM1.5 standard solar radiation and the absorption coefficients of the materials. It is shown that, in the region of wavelengths {lambda} = {lambda}{sub g} = hc/E{sub g}, almost total absorption of the photons in AM1.5 solar radiation is attained in c-Si at the thickness d = 7-8 mm, in a-Simore » at d = 30-60 {mu}m, in CdTe at d = 20-30 {mu}m, and in CIS and CGS at d = 3-4 {mu}m. The results differ from previously reported data for these materials (especially for c-Si). In previous publications, the thickness needed for the semiconductor to absorb solar radiation completely was identified with the effective light penetration depth at a certain wavelength in the region of fundamental absorption for the semiconductor.« less

Luminal glucose concentrations in the gut under normal conditions.

PubMed

Ferraris, R P; Yasharpour, S; Lloyd, K C; Mirzayan, R; Diamond, J M

1990-11-01

Luminal glucose (Glc) concentrations in the small intestine (SI) are widely assumed to be 50-500 mM. These values have posed problems for interpreting SI luminal osmolality and absorptive capacity, Glc transporter Michaelis-Menten constants (Km), and the physiological role of active Glc transport and its regulation. Hence we measured luminal contents, osmolality, and Glc, Na+, and K+ concentrations in normally feeding rats, rabbits, and dogs. Measured Glc concentrations were compatible with the portion of measured osmolality not accounted for by Na+ and K+ salts, amino acids, and peptides. Mean SI luminal osmolalities were less than or equal to 100 mosmol/kg hypertonic. For animals on the most nearly physiological diets, SI Glc concentrations averaged 0.4-24 mM and ranged with time and SI region from 0.2 to a maximum of 48 mM. The older published very high values are artifacts of direct infusion of concentrated Glc solutions into the gut, nonspecific Glc assays, and failure to test for quantitative recovery or to centrifuge samples in the cold. By storing food after meals and releasing it between meals, rat stomach greatly damps diurnal fluctuations in quantity and osmolality of food reaching the SI and hence also damps fluctuations in absorption rates. These new values for luminal Glc have five important physiological implications: the problem of accounting for apparently very hypertonic SI contents in the face of high osmotic water permeability disappears; the effective Km of the SI Glc transporter is now comparable to prevailing Glc concentrations; the SI no longer appears to have enormous excess absorptive capacity for Glc; regulation of Glc transport by dietary intake now makes functional sense; and the claim that high luminal Glc concentrations permit solvent drag to become the major mode of Glc absorption under normal conditions is undermined.

Compound formation and superconductivity in Au-Si: X-ray absorption measurements on ion-beam-mixed Au-Si films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Y.; Jisrawi, N.; Liang, G.

Multilayered Au-Si thin films have been deposited with the net compositions ''Au/sub 1-//sub x/Si/sub x/,'' x = 0.29, 0.5, and 0.8. After ion-beam mixing these films exhibited superconductivity in the 0.3--1.2 K range despite the nonsuperconducting character of both Au and Si. Near-edge x-ray absorption spectroscopy (XAS) measurements on the Au L/sub 3/ edge in these films indicate that metastable Au-Si compound formation occurs in these ion-mixed materials. Specifically, the XAS measurements indicate changes in Au 5d-orbital occupancy and changes in the local Au structural environment which are both consistent with local compound formation.

SiN{sub x} layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Yunae; Kim, Eunah; Gwon, Minji

2015-10-12

We compared nanopatterned Si solar cells with and without SiN{sub x} layers. The SiN{sub x} layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN{sub x} layer played a crucial role in the improved carrier collection ofmore » the nanostructured solar cells.« less

a-Si:H/SiNW shell/core for SiNW solar cell applications

PubMed Central

2013-01-01

Vertically aligned silicon nanowires have been synthesized by the chemical etching of silicon wafers. The influence of a hydrogenated amorphous silicon (a-Si:H) layer (shell) on top of a silicon nanowire (SiNW) solar cell has been investigated. The optical properties of a-Si:H/SiNWs and SiNWs are examined in terms of optical reflection and absorption properties. In the presence of the a-Si:H shell, 5.2% reflection ratio in the spectral range (250 to 1,000 nm) is achieved with a superior absorption property with an average over 87% of the incident light. In addition, the characteristics of the solar cell have been significantly improved, which exhibits higher open-circuit voltage, short-circuit current, and efficiency by more than 15%, 12%, and 37%, respectively, compared with planar SiNW solar cells. Based on the current–voltage measurements and morphology results, we show that the a-Si:H shell can passivate the defects generated by wet etching processes. PMID:24195734

Opto-electronic characterizations of oriented nano-structure CdSe film/Si (0 0 1) heterostructure

NASA Astrophysics Data System (ADS)

Al-Kotb, M. S.; Al-Waheidi, Jumana Z.; Kotkata, M. F.

2014-05-01

Nano-crystalline CdSe thin films were fabricated by evaporating CdSe nano-powders on glass and p-Si (0 0 1) substrates. X-ray diffraction analysis indicated the hexagonal structure for the growing film along the (0 0 2) plane. The results revealed that the thermally evaporated thin film has a comparatively smoother surface with grain size ˜21 nm. Analysis of the absorption coefficient dependence on the photon energy predicts two direct band-gap values of 2.11 ± 0.02 and 1.71 ± 0.03 eV. On the basis of the Wemple-diDomenico single oscillator model, the values of single oscillator energy (Eu) and oscillator dispersion energy (Ed) found to be 2.71 ± 0.09 and 12.94 ± 0.35 eV, respectively. The photoluminescence measurements show levels at the following values: 1.824, 1.786, 1.682, and 1.617 eV confirming the native defects existence in the gap of CdSe films because of stoichiometric deviation. The forward I-V characteristics of Ni/CdSe/p-Si (0 0 1) structure have been primarily analyzed within the framework of a standard thermionic emission theory over the temperature range of 160-360 K. The characteristic parameters of the Ni/CdSe/p-Si(0 0 1) structure such as barrier height (φb), ideality factor (n), and series resistance (Rs) have been calculated using a method developed by Cheung-Cheung.

Studies of silicon quantum dots prepared at different substrate temperatures

NASA Astrophysics Data System (ADS)

Al-Agel, Faisal A.; Suleiman, Jamal; Khan, Shamshad A.

2017-03-01

In this research work, we have synthesized silicon quantum dots at different substrate temperatures 193, 153 and 123 K at a fixed working pressure 5 Torr. of Argon gas. The structural studies of these silicon quantum dots have been undertaken using X-ray diffraction, Field Emission Scanning Electron Microscopy (FESEM) and High Resolution Transmission Electron Microscopy (HRTEM). The optical and electrical properties have been studied using UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Fluorescence spectroscopy and I-V measurement system. X-ray diffraction pattern of Si quantum dots prepared at different temperatures show the amorphous nature except for the quantum dots synthesized at 193 K which shows polycrystalline nature. FESEM images of samples suggest that the size of quantum dots varies from 2 to 8 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed for Si quantum dots. FTIR spectra suggest that as-grown Si quantum dots are partially oxidized which is due exposure of as-prepared samples to air after taking out from the chamber. PL spectra of the synthesized silicon quantum dots show an intense peak at 444 nm, which may be attributed to the formation of Si quantum dots. Temperature dependence of dc conductivity suggests that the dc conductivity enhances exponentially by raising the temperature. On the basis above properties i.e. direct band gap, high absorption coefficient and high conductivity, these silicon quantum dots will be useful for the fabrication of solar cells.

Co7Fe3 and Co7Fe3@SiO2 Nanospheres with Tunable Diameters for High-Performance Electromagnetic Wave Absorption.

PubMed

Chen, Na; Jiang, Jian-Tang; Xu, Cheng-Yan; Yuan, Yong; Gong, Yuan-Xun; Zhen, Liang

2017-07-05

Ferromagnetic metal/alloy nanoparticles have attracted extensive interest for electromagnetic wave-absorbing applications. However, ferromagnetic nanoparticles are prone to oxidization and producing eddy currents, leading to the deterioration of electromagnetic properties. In this work, a simple and scalable liquid-phase reduction method was employed to synthesize uniform Co 7 Fe 3 nanospheres with diameters ranging from 350 to 650 nm for high-performance microwave absorption application. Co 7 Fe 3 @SiO 2 core-shell nanospheres with SiO 2 shell thicknesses of 30 nm were then fabricated via a modified Stöber method. When tested as microwave absorbers, bare Co 7 Fe 3 nanospheres with a diameter of 350 nm have a maximum reflection loss (RL) of 78.4 dB and an effective absorption with RL > 10 dB from 10 to 16.7 GHz at a small thickness of 1.59 mm. Co 7 Fe 3 @SiO 2 nanospheres showed a significantly enhanced microwave absorption capability for an effective absorption bandwidth and a shift toward a lower frequency, which is ascribed to the protection of the SiO 2 shell from direct contact among Co 7 Fe 3 nanospheres, as well as improved crystallinity and decreased defects upon annealing. This work illustrates a simple and effective method to fabricate Co 7 Fe 3 and Co 7 Fe 3 @SiO 2 nanospheres as promising microwave absorbers, and the design concept can also be extended to other ferromagnetic alloy particles.

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

PubMed

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

RNA polymerases IV and V influence the 3' boundaries of Polymerase II transcription units in Arabidopsis.

PubMed

McKinlay, Anastasia; Podicheti, Ram; Wendte, Jered M; Cocklin, Ross; Rusch, Douglas B

2018-02-01

Nuclear multisubunit RNA polymerases IV and V (Pol IV and Pol V) evolved in plants as specialized forms of Pol II. Their functions are best understood in the context of RNA-directed DNA methylation (RdDM), a process in which Pol IV-dependent 24 nt siRNAs direct the de novo cytosine methylation of regions transcribed by Pol V. Pol V has additional functions, independent of Pol IV and 24 nt siRNA biogenesis, in maintaining the repression of transposons and genomic repeats whose silencing depends on maintenance cytosine methylation. Here we report that Pol IV and Pol V play unexpected roles in defining the 3' boundaries of Pol II transcription units. Nuclear run-on assays reveal that in the absence of Pol IV or Pol V, Pol II occupancy downstream of poly A sites increases for approximately 12% of protein-coding genes. This effect is most pronounced for convergently transcribed gene pairs. Although Pols IV and V are detected near transcript ends of the affected Pol II - transcribed genes, their role in limiting Pol II read-through is independent of siRNA biogenesis or cytosine methylation for the majority of these genes. Interestingly, we observed that splicing was less efficient in pol IV or pol V mutant plants, compared to wild-type plants, suggesting that Pol IV or Pol V might affect pre-mRNA processing. We speculate that Pols IV and V (and/or their associated factors) play roles in Pol II transcription termination and pre-mRNA splicing by influencing polymerase elongation rates and/or release at collision sites for convergent genes.

SiP monolayers: New 2D structures of group IV-V compounds for visible-light photohydrolytic catalysts

NASA Astrophysics Data System (ADS)

Ma, Zhinan; Zhuang, Jibin; Zhang, Xu; Zhou, Zhen

2018-06-01

Because of graphene and phosphorene, two-dimensional (2D) layered materials of group IV and group V elements arouse great interest. However, group IV-V monolayers have not received due attention. In this work, three types of SiP monolayers were computationally designed to explore their electronic structure and optical properties. Computations confirm the stability of these monolayers, which are all indirect-bandgap semiconductors with bandgaps in the range 1.38-2.21 eV. The bandgaps straddle the redox potentials of water at pH = 0, indicating the potential of the monolayers for use as watersplitting photocatalysts. The computed optical properties demonstrate that certain monolayers of SiP 2D materials are absorbers of visible light and would serve as good candidates for optoelectronic devices.

In vitro investigation of intestinal transport mechanism of silicon, supplied as orthosilicic acid-vanillin complex.

PubMed

Sergent, Thérèse; Croizet, Karine; Schneider, Yves-Jacques

2017-02-01

Silicon (Si) is one of the most abundant trace elements in the body. Although pharmacokinetics data described its absorption from the diet and its body excretion, the mechanisms involved in the uptake and transport of Si across the gut wall have not been established. Caco-2 cells were used as a well-accepted in vitro model of the human intestinal epithelium to investigate the transport, across the intestinal barrier in both the absorption and excretion directions, of Si supplied as orthosilicic acid stabilized by vanillin complex (OSA-VC). The transport of this species was found proportional to the initial concentration and to the duration of incubation, with absorption and excretion mean rates similar to those of Lucifer yellow, a marker of paracellular diffusion, and increasing in the presence of EGTA, a chelator of divalents cations including calcium. A cellular accumulation of Si, polarized from the apical side of cells, was furthermore detected. These results provide evidence that Si, ingested as a food supplement containing OSA-VC, crosses the intestinal mucosa by passive diffusion via the paracellular pathway through the intercellular tight junctions and accumulates intracellularly, probably by an uptake mechanism of facilitated diffusion. This study can help to further understand the kinetic of absorption of Si. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-layer coating of SiO2 nanoparticles to enhance light absorption by Si solar cells

NASA Astrophysics Data System (ADS)

Nam, Yoon-Ho; Um, Han-Don; Park, Kwang-Tae; Shin, Sun-Mi; Baek, Jong-Wook; Park, Min-Joon; Jung, Jin-Young; Zhou, Keya; Jee, Sang-Won; Guo, Zhongyi; Lee, Jung-Ho

2012-06-01

We found that multi-layer coating of a Si substrate with SiO2 dielectric nanoparticles (NPs) was an effective method to suppress light reflection by silicon solar cells. To suppress light reflection, two conditions are required for the coating: 1) The difference of refractive indexes between air and Si should be alleviated, and 2) the quarter-wavelength antireflection condition should be satisfied while avoiding intrinsic absorption loss. Light reflection was reduced due to destructive interference at certain wavelengths that depended on the layer thickness. For the same thickness dielectric layer, smaller NPs enhanced antireflectance more than larger NPs due to a decrease in scattering loss by the smaller NPs.

Investigation of direct current electrical properties of electrochemically etched mesoporous silicon carbide

NASA Astrophysics Data System (ADS)

Gautier, G.; Biscarrat, J.; Defforge, T.; Fèvre, A.; Valente, D.; Gary, A.; Menard, S.

2014-12-01

In this study, we show I-V characterizations of various metal/porous silicon carbide (pSiC)/silicon carbide (SiC) structures. SiC wafers were electrochemically etched from the Si and C faces in the dark or under UV lighting leading to different pSiC morphologies. In the case of low porosity pSiC etched in the dark, the I-V characteristics were found to be almost linear and the extracted resistivities of pSiC were around 1.5 × 104 Ω cm at 30 °C for the Si face. This is around 6 orders of magnitude higher than the resistivity of doped SiC wafers. In the range of 20-200 °C, the activation energy was around 50 meV. pSiC obtained from the C face was less porous and the measured average resistivity was 10 Ω cm. In the case high porosity pSiC etched under UV illumination, the resistivity was found to be much higher, around 1014 Ω cm at room temperature. In this case, the extracted activation energy was estimated to be 290 meV.

Hydrothermally-altered dacite terrains in the Methana peninsula Greece: Relevance to Mars

NASA Astrophysics Data System (ADS)

Cloutis, Edward A.; Jonatanson, Victoria; Bandfield, Joshua L.; Amador, Elena S.; Rivera-Hernández, Frances; Mann, P.; Mertzman, Stanley A.

2017-04-01

Dacitic rocks, often indicative of crustal recycling on Earth, have been identified in some regions on Mars, as have possible hydrothermally/aqueously-altered dacites. To enable more robust identification of unaltered and altered dacites on Mars and other planetary bodies, we undertook a spectroscopic-structural-compositional study of altered and unaltered dacites from a dacitic volcanic region in Methana, Greece. Dacites erupted in this region range from fresh to pervasively hydrothermally altered, resulting in friable, Si-enriched products, as well as fumarolic deposition of Si and S-rich precipitates. Spectrally, fresh dacites are unremarkable in the 0.35-2.5 μm region with low, generally flat, reflectance and few, if any, absorption bands. Dacite infrared spectra exhibit Si-O absorption features in the 8-10 μm region (which are characteristic of Si-bearing rocks, in general). With increasing alteration, reflectance over the 0.35-2.5 μm range increases, absorption bands in the 1.4 and 1.9 μm region, associated with H2O/OH, and in the 2.2-2.3 μm region, associated with SiOH, become deeper, Fe3+-associated absorption bands in the 0.43 and 0.9 μm region appear, and the Christiansen feature near 8 μm moves to shorter wavelengths. Silica-rich coatings appear to be spectrally indistinguishable from Si-rich alteration. Alteration-formed sulfates may be detectable by the presence of diagnostic absorption features in the 0.35-2.5 μm region. Spectral similarities between different poorly crystalline high-Si phases make it difficult to uniquely determine the processes that formed high-Si surfaces that have been identified on Mars. However, the samples described here show a variety of spectral features that correspond to variable amounts of alteration. We find a similar range of spectral features, likely due to similar phases, on Mars, perhaps indicating a similar range of alteration environments. Comparison of laboratory spectra to Mars observational data also suggests that the major Si-rich regions likely consist of assemblages that more mineralogically complex than those included in this study.

Research on Antiphonic Characteristic of AlMg10-SiC Ultralight Composite Materials

NASA Astrophysics Data System (ADS)

Rusu, O.; Rusu, I.

2018-06-01

The paper presents the results on the absorption sound testing of an ultralight cellular composite material AlMg10-SiC, obtained by sputtering method. We have chosen this type of material because its microstructure generally comprises open cells (and relatively few semi-open cells), evenly distributed in the material, a structure that, at least theoretically, has a favorable behavior in relation to sound damping. The tests were performed on three types of samples, namely P11 – AlMg10 – 5%SiC, P12 – AlMg10 – 10%SiC şi P13 – AlMg10 – 15%SiC. The 15% SiC (P13) cellular material sample has the best sound-absorbing characteristics and the highest practical absorption degree.

RNA polymerase V-dependent small RNAs in Arabidopsis originate from small, intergenic loci including most SINE repeats.

PubMed

Lee, Tzuu-fen; Gurazada, Sai Guna Ranjan; Zhai, Jixian; Li, Shengben; Simon, Stacey A; Matzke, Marjori A; Chen, Xuemei; Meyers, Blake C

2012-07-01

In plants, heterochromatin is maintained by a small RNA-based gene silencing mechanism known as RNA-directed DNA methylation (RdDM). RdDM requires the non-redundant functions of two plant-specific DNA-dependent RNA polymerases (RNAP), RNAP IV and RNAP V. RNAP IV plays a major role in siRNA biogenesis, while RNAP V may recruit DNA methylation machinery to target endogenous loci for silencing. Although small RNA-generating regions that are dependent on both RNAP IV and RNAP V have been identified previously, the genomic loci targeted by RNAP V for siRNA accumulation and silencing have not been described extensively. To characterize the RNAP V-dependent, heterochromatic siRNA-generating regions in the Arabidopsis genome, we deeply sequenced the small RNA populations of wild-type and RNAP V null mutant (nrpe1) plants. Our results showed that RNAP V-dependent siRNA-generating loci are associated predominately with short repetitive sequences in intergenic regions. Suppression of small RNA production from short repetitive sequences was also prominent in RdDM mutants including dms4, drd1, dms3 and rdm1, reflecting the known association of these RdDM effectors with RNAP V. The genomic regions targeted by RNAP V were small, with an estimated average length of 238 bp. Our results suggest that RNAP V affects siRNA production from genomic loci with features dissimilar to known RNAP IV-dependent loci. RNAP V, along with RNAP IV and DRM1/2, may target and silence a set of small, intergenic transposable elements located in dispersed genomic regions for silencing. Silencing at these loci may be actively reinforced by RdDM.

Revisiting Weak Emission-line Quasars with a Simple Approach to Deduce their Nature and the Tracers of X-ray Weakness

NASA Astrophysics Data System (ADS)

Ni, Qingling

2018-01-01

We present an X-ray and multi-wavelength study of 17 “bridge” weak emission-line quasars (WLQs) and 16 “extreme” WLQs naturally divided by their C IV rest equivalent widths (REWs), which constitute our clean WLQ sample together. New Chandra 3.1-4.8 ks observations were obtained for 14 objects while the other 19 have archival X-ray observations. 4 of the 17 bridge WLQs appear to be X-ray weak, while 9 of the 16 extreme WLQs appear to be X-ray weak. The X-ray weak fraction in the bridge sample (23.5%) is lower than in the extreme sample(56.3%), indicating the fraction of X-ray weak objects along with rising C IV REWs.X-ray stacking analysis is performed for the X-ray weak WLQs in the clean sample. We measured a relatively hard (Γeff=1.37) effective power-law photon index for a stack of the X-ray weak subsample, suggesting X-ray absorption due to shielding material inside the broad emission-line region (BELR). We proposed a geometrically and optically thick inner accretion disk as the natural shield, which could also explain the behavior of the X-ray weak fraction along with C IV REW.Futhermore, we ran Peto-Prentice tests to assess if the distributions of optical-UV spectral properties are different between X-ray weak WLQs and X-ray normal WLQs. We also examined correlations between △αOX and optical-UV spectral properties. The C IV REW, C IV blueshift, C IV FWHM, REWs of the Si IV, λ1900, Fe II, and Mg II emission features, and the relative SDSS color △(g - i) are examined in our study. △(g - i) turned out to be the most effective tracer of X-ray weakness.

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.

PubMed

Jiang, Xiaofan; Ma, Zhongyuan; Xu, Jun; Chen, Kunji; Xu, Ling; Li, Wei; Huang, Xinfan; Feng, Duan

2015-10-28

The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p(+)-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiNx:H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I-V) curves combined with the temperature dependence of the I-V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole-Frenkel (P-F) processes. Our introduction of hydrogen in the a-SiNx:H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM.

Far-UV Spectroscopy of the Planet-hosting Star WASP-13: High-energy Irradiance, Distance, Age, Planetary Mass-loss Rate, and Circumstellar Environment

NASA Astrophysics Data System (ADS)

Fossati, L.; France, K.; Koskinen, T.; Juvan, I. G.; Haswell, C. A.; Lendl, M.

2015-12-01

Several transiting hot Jupiters orbit relatively inactive main-sequence stars. For some of those, the {log}{R}{HK}\\prime activity parameter lies below the basal level (-5.1). Two explanations have been proposed so far: (i) the planet affects the stellar dynamo, (ii) the {log}{R}{HK}\\prime measurements are biased by extrinsic absorption, either by the interstellar medium (ISM) or by material local to the system. We present here Hubble Space Telescope/COS far-UV spectra of WASP-13, which hosts an inflated hot Jupiter and has a measured {log}{R}{HK}\\prime value (-5.26), well below the basal level. From the star’s spectral energy distribution we obtain an extinction E(B - V) = 0.045 ± 0.025 mag and a distance d = 232 ± 8 pc. We detect at ≳4σ lines belonging to three different ionization states of carbon (C i, C ii, and C iv) and the Si iv doublet at ˜3σ. Using far-UV spectra of nearby early G-type stars of known age, we derive a C iv/C i flux ratio-age relation, from which we estimate WASP-13's age to be 5.1 ± 2.0 Gyr. We rescale the solar irradiance reference spectrum to match the flux of the C iv 1548 doublet. By integrating the rescaled solar spectrum, we obtain an XUV flux at 1 AU of 5.4 erg s-1 cm-2. We use a detailed model of the planet’s upper atmosphere, deriving a mass-loss rate of 1.5 × 1011 g s-1. Despite the low {log}{R}{HK}\\prime value, the star shows a far-UV spectrum typical of middle-aged solar-type stars, pointing toward the presence of significant extrinsic absorption. The analysis of a high-resolution spectrum of the Ca ii H&K lines indicates that the ISM absorption could be the origin of the low {log}{R}{HK}\\prime value. Nevertheless, the large uncertainty in the Ca ii ISM abundance does not allow us to firmly exclude the presence of circumstellar gas. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained from MAST at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. These observations are associated with program #13859.

The Cycles of Gaseous Baryons between the Disk and Halo

NASA Astrophysics Data System (ADS)

Zheng, Yong

2018-01-01

The disks of galaxies closely interact with the circumgalactic medium (CGM) through the disk-halo (D/H) interface. The disks grow by inflows from the CGM, while the CGM is enriched, stirred, and heated by outflows from the disks. Recent years have seen great breakthroughs in observations of inflows and outflows at the D/H interface; however, inflow detections are still rare and the structure of the D/H interface is unclear. My thesis work includes searching for inflows and studying the multiphase gas at the D/H interface, and building my expertise in both UV spectroscopy and HI 21cm observations.I will first show HST/COS observations of gas inflows detected in Si IV absorption lines at M33’s D/H interface (Zheng et al. 2017a); this is among the first to unambiguously reveal the existence of disk-wide galactic inflows. The detection of Si IV-bearing inflows indicates that baryons are efficiently recycled between the disk and halo, mostly consistent with a galactic fountain scenario. Then I will present a 3-dimensional kinematic model of the Milky Way (MW)’s D/H interface. I will show that beyond the MW’s D/H interface, there is a significant amount of baryons in the MW’s CGM moving at low velocities (|vlsr|<100 km/s; Zheng et al. 2015, Zheng et al. 2017c). Current MW’s CGM mass estimates suffer from an inside-out observational bias: local observers miss more than half of the gas mass in the MW’s CGM that is blocked out in high-velocity focused studies.

On the origin of the warm-hot absorbers in the Milky Way's halo

NASA Astrophysics Data System (ADS)

Marasco, A.; Marinacci, F.; Fraternali, F.

2013-08-01

Disc galaxies like the Milky Way are expected to be surrounded by massive coronae of hot plasma that may contain a significant fraction of the so-called missing baryons. We investigate whether the local (|vLSR| < 400 km s-1) warm-hot absorption features observed towards extra-Galactic sources or halo stars are consistent with being produced by the cooling of the Milky Way's corona. In our scheme, cooling occurs at the interface between the disc and the corona and it is triggered by positive supernova feedback. We combine hydrodynamical simulations with a dynamical 3D model of the galactic fountain to predict the all-sky distribution of this cooling material, and we compare it with the observed distribution of detections for different `warm' (Si III, Si IV, C II, C IV) and `hot' (O VI) ionized species. The model reproduces the position-velocity distribution and the column densities of the vast majority of warm absorbers and about half of O VI absorbers. We conclude that the warm-hot gas responsible for most of the detections lies within a few kiloparsec from the Galactic plane, where high-metallicity material from the disc mixes efficiently with the hot corona. This process provides an accretion of a few M⊙ yr- 1 of fresh gas that can easily feed the star formation in the disc of the Galaxy. The remaining O VI detections are likely to be a different population of absorbers, located in the outskirts of the Galactic corona and/or in the circumgalactic medium of nearby galaxies.

Bond-length relaxation in crystalline Si1-xGex alloys: An extended x-ray-absorption fine-structure study

NASA Astrophysics Data System (ADS)

Kajiyama, Hiroshi; Muramatsu, Shin-Ichi; Shimada, Toshikazu; Nishino, Yoichi

1992-06-01

Extended x-ray-absorption fine-structure spectra for crystalline Si1-xGex alloys, measured at the K edge of Ge at room temperature, are analyzed with a curve-fitting method based on the spherical-wave approximation. The Ge-Ge and Ge-Si bond lengths, coordination numbers of Ge and Si atoms around a Ge atom, and Debye-Waller factors of Ge and Si atoms are obtained. It is shown that Ge-Ge and Ge-Si bonds relax completely, for all Ge concentrations of their study, while the lattice constant varies monotonically, following Vegard's law. As noted by Bragg and later by Pauling and Huggins, the Ge-Ge and Ge-Si bond lengths are close to the sum of their constituent-element atomic radii: nearly 2.45 Å for Ge-Ge bonds and 2.40 Å for Ge-Si bonds. A study on the coordination around a Ge atom in the alloys revealed that Ge and Si atoms mix randomly throughout the compositional range studied.

MT2-MMP-dependent release of collagen IV NC1 domains regulates submandibular gland branching morphogenesis.

PubMed

Rebustini, Ivan T; Myers, Christopher; Lassiter, Keyonica S; Surmak, Andrew; Szabova, Ludmila; Holmbeck, Kenn; Pedchenko, Vadim; Hudson, Billy G; Hoffman, Matthew P

2009-10-01

Proteolysis is essential during branching morphogenesis, but the roles of MT-MMPs and their proteolytic products are not clearly understood. Here, we discover that decreasing MT-MMP activity during submandibular gland branching morphogenesis decreases proliferation and increases collagen IV and MT-MMP expression. Specifically, reducing epithelial MT2-MMP profoundly decreases proliferation and morphogenesis, increases Col4a2 and intracellular accumulation of collagen IV, and decreases the proteolytic release of collagen IV NC1 domains. Importantly, we demonstrate the presence of collagen IV NC1 domains in developing tissue. Furthermore, recombinant collagen IV NC1 domains rescue branching morphogenesis after MT2-siRNA treatment, increasing MT-MMP and proproliferative gene expression via beta1 integrin and PI3K-AKT signaling. Additionally, HBEGF also rescues MT2-siRNA treatment, increasing NC1 domain release, proliferation, and MT2-MMP and Hbegf expression. Our studies provide mechanistic insight into how MT2-MMP-dependent release of bioactive NC1 domains from collagen IV is critical for integrating collagen IV synthesis and proteolysis with epithelial proliferation during branching morphogenesis.

Anomalous ionization seen in the spectra of B supergiants

NASA Technical Reports Server (NTRS)

Cassinelli, J. P.; Abbott, D. C.

1981-01-01

An IUE survey of B supergiants has been conducted to study the persistence with spectral type of the ultraviolet resonance lines of N V, C IV and Si IV. N V is seen as late as B2.5Ia, C IV until B6Ia and Si IV throughout the range from B1.5 to B9. This is in fairly good agreement with the Auger ionization model of Cassinelli and Olson (1979). The terminal velocities are derived for the 20 stars in the sample and it is found that the ratio v(T)/v(esc) decreases monotonically with spectral type from the value of 3.0 that it has in the O spectral range to the value 1.0 at B9Ia.

The Shock Index revisited – a fast guide to transfusion requirement? A retrospective analysis on 21,853 patients derived from the TraumaRegister DGU®

PubMed Central

2013-01-01

Introduction Isolated vital signs (for example, heart rate or systolic blood pressure) have been shown unreliable in the assessment of hypovolemic shock. In contrast, the Shock Index (SI), defined by the ratio of heart rate to systolic blood pressure, has been advocated to better risk-stratify patients for increased transfusion requirements and early mortality. Recently, our group has developed a novel and clinical reliable classification of hypovolemic shock based upon four classes of worsening base deficit (BD). The objective of this study was to correlate this classification to corresponding strata of SI for the rapid assessment of trauma patients in the absence of laboratory parameters. Methods Between 2002 and 2011, data for 21,853 adult trauma patients were retrieved from the TraumaRegister DGU® database and divided into four strata of worsening SI at emergency department arrival (group I, SI <0.6; group II, SI ≥0.6 to <1.0; group III, SI ≥1.0 to <1.4; and group IV, SI ≥1.4) and were assessed for demographics, injury characteristics, transfusion requirements, fluid resuscitation and outcomes. The four strata of worsening SI were compared with our recently suggested BD-based classification of hypovolemic shock. Results Worsening of SI was associated with increasing injury severity scores from 19.3 (± 12) in group I to 37.3 (± 16.8) in group IV, while mortality increased from 10.9% to 39.8%. Increments in SI paralleled increasing fluid resuscitation, vasopressor use and decreasing hemoglobin, platelet counts and Quick’s values. The number of blood units transfused increased from 1.0 (± 4.8) in group I to 21.4 (± 26.2) in group IV patients. Of patients, 31% in group III and 57% in group IV required ≥10 blood units until ICU admission. The four strata of SI discriminated transfusion requirements and massive transfusion rates equally with our recently introduced BD-based classification of hypovolemic shock. Conclusion SI upon emergency department arrival may be considered a clinical indicator of hypovolemic shock in respect to transfusion requirements, hemostatic resuscitation and mortality. The four SI groups have been shown to equal our recently suggested BD-based classification. In daily clinical practice, SI may be used to assess the presence of hypovolemic shock if point-of-care testing technology is not available. PMID:23938104

Effect of N2 Plasma Annealing on Properties of Fluorine Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra-Large-Scale Integrated Circuits

NASA Astrophysics Data System (ADS)

Zhang, Wei; Wang, Peng-Fei; Ding, Shi-Jin; Wang, Ji-Tao; William, Wei Lee

2002-06-01

The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated. The stability of the dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing. After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50°C, the dielectric constant variation of the annealed SiOF films is only 1.5%, while the variation for those SiOF films without annealing is 15.5%. Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films. These unstable Si-F2 bonds are suitable to react with water, resulting in the degradation of SiOF film properties. Therefore, the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.

Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory.

PubMed

Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-Ichi; Bowler, David R; Miki, Kazushi

2017-04-20

We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from [Formula: see text] to [Formula: see text] Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.

Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si

NASA Astrophysics Data System (ADS)

Yang, W.; Akey, A. J.; Smillie, L. A.; Mailoa, J. P.; Johnson, B. C.; McCallum, J. C.; Macdonald, D.; Buonassisi, T.; Aziz, M. J.; Williams, J. S.

2017-12-01

Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a limit to this behavior since ultrahigh Au concentrations (>1 ×1020c m-3 ) are expected to induce cellular breakdown during the rapid resolidification of Si, a process that is associated with significant lateral impurity precipitation. This work shows that the cellular morphology observed in Au-hyperdoped Si differs from that in conventional, steady-state cellular breakdown. In particular, Rutherford backscattering spectrometry combined with channeling and transmission electron microscopy revealed an inhomogeneous Au distribution and a subsurface network of Au-rich filaments, within which the Au impurities largely reside on substitutional positions in the crystalline Si lattice, at concentrations as high as ˜3 at. %. The measured substitutional Au dose, regardless of the presence of Au-rich filaments, correlates strongly with the sub-band gap optical absorptance. Upon subsequent thermal treatment, the supersaturated Au forms precipitates, while the Au substitutionality and the sub-band gap optical absorption both decrease. These results offer insight into a metastable filamentary regime in Au-hyperdoped Si that has important implications for Si-based infrared optoelectronics.

Towards better light harvesting capability for DSSC (dye sensitized solar cells) through addition of Au@SiO2 core-shell nanoparticles

NASA Astrophysics Data System (ADS)

Fadhilah, Nur; Alhadi, Emha Riyadhul Jinan; Risanti, Doty Dewi

2018-04-01

The Au nanoparticles as core can increase the light harvesting due to the strong near-field effect LSPR (Localized Surface Plasmon Resonance), effectively minimized the electron recombination process and also can improve the optical absorption of the dye sensitized. Au@SiO2 core-shell nanoparticles were prepared using SiO2 extracted from Sidoarjo mud volcano. In this work investigated the influence of pH solution and silica shell volume fraction in Au@SiO2 nanoparticles core-shell structure on DSSC loaded with Ru-based dye. From XRD characterization it was found that core-shell contains SiO2, Au, γAl2O3 and traces NaCl. UV-Vis absorption spectra of core-shell showed the position of the surface plasmon AuNP band in the range of 500-600 nm. The Au@SiO2 core-shell with volume fraction of 30ml silica has the highest peak absorbance. The enhanced light absorption is primarily attributed to the LSPR effect of the Au core. Our results on incident photon-to-current conversion efficiency indicates that the presence of SiO2 depending on its volume fraction tends to shift to longer wavelength.

Millimeter-wave spectroscopy of the SiCl+ ion

NASA Astrophysics Data System (ADS)

Takeda, Kazuki; Masuda, Satoshi; Harada, Kensuke; Tanaka, Keiichi

2016-05-01

The millimeter-wave spectrum of the SiCl+ ion in the ground and first excited vibrational states was observed for the two isotopic (35Cl and 37Cl) species. The ion was generated in a free-space absorption cell by a hollow cathode discharge of SiCl4 diluted with He and discriminated from neutral species by the magnetic field effect on the absorption lines. The observed millimeter-wave spectrum was combined with a previously reported diode laser spectrum in an analysis to determine mass-independent Dunham coefficients as well as the mass scaling parameters. The equilibrium bond length of SiCl+ determined is re = 1.943 978(2) Å.

Broadband optical absorption by tunable Mie resonances in silicon nanocone arrays

DOE PAGES

Wang, Z. Y.; Zhang, R. J.; Wang, S. Y.; ...

2015-01-15

Nanostructure arrays such as nanowire, nanopillar, and nanocone arrays have been proposed to be promising antireflection structures for photovoltaic applications due to their great light trapping ability. In this paper, the optical properties of Si nanopillar and nanocone arrays in visible and infrared region were studied by both theoretical calculations and experiments. The results show that the Mie resonance can be continuously tuned across a wide range of wavelength by varying the diameter of the nanopillars. However, Si nanopillar array with uniform diameter exhibits only discrete resonance mode, thus can't achieve a high broadband absorption. On the other hand, themore » Mie resonance wavelength in a Si nanocone array can vary continuously as the diameters of the cross sections increase from the apex to the base. Therefore Si nanocone arrays can strongly interact with the incident light in the broadband spectrum and the absorbance by Si nanocone arrays is higher than 95% over the wavelength from 300 to 2000 nm. In addition to the Mie resonance, the broadband optical absorption of Si nanocone arrays is also affected by Wood-Rayleigh anomaly effect and metal impurities introduced in the fabrication process.« less

Enhanced photoemission from glancing angle deposited SiOx-TiO2 axial heterostructure nanowire arrays

NASA Astrophysics Data System (ADS)

Dhar, J. C.; Mondal, A.; Singh, N. K.; Chattopadhyay, K. K.

2013-05-01

The glancing angle deposition technique has been employed to synthesize SiOx-TiO2 heterostructure nanowire (NW) arrays on indium tin oxide (ITO) coated glass substrate. A field emission gun scanning electron microscopic image shows that the average diameter of the NWs is ˜50 nm. Transmission electron microscopy images show the formation of heterostructure NWs, which consist of ˜180 nm SiOx and ˜210 nm long TiO2. The selected-area electron diffraction shows the amorphous nature of the synthesized NWs, which was also confirmed by X-ray diffraction method. The main band absorption edges at 3.5 eV were found for both the SiOx-TiO2 and TiO2 NW arrays on ITO coated glass plate from optical absorption measurement. Ti3+ defect related sub-band gap transition at 2.5 eV was observed for TiO2 NWs, whereas heterostructure NWs revealed the SiOx optical band gap related transition at ˜2.2 eV. Two fold improved photon absorption as well as five times photoluminescence emission enhancement were observed for the SiOx-TiO2 multilayer NWs compared to TiO2 NWs.

Broadband optical absorption by tunable Mie resonances in silicon nanocone arrays

PubMed Central

Wang, Z. Y.; Zhang, R. J.; Wang, S. Y.; Lu, M.; Chen, X.; Zheng, Y. X.; Chen, L. Y.; Ye, Z.; Wang, C. Z.; Ho, K. M.

2015-01-01

Nanostructure arrays such as nanowire, nanopillar, and nanocone arrays have been proposed to be promising antireflection structures for photovoltaic applications due to their great light trapping ability. In this paper, the optical properties of Si nanopillar and nanocone arrays in visible and infrared region were studied by both theoretical calculations and experiments. The results show that the Mie resonance can be continuously tuned across a wide range of wavelength by varying the diameter of the nanopillars. However, Si nanopillar array with uniform diameter exhibits only discrete resonance mode, thus can't achieve a high broadband absorption. On the other hand, the Mie resonance wavelength in a Si nanocone array can vary continuously as the diameters of the cross sections increase from the apex to the base. Therefore Si nanocone arrays can strongly interact with the incident light in the broadband spectrum and the absorbance by Si nanocone arrays is higher than 95% over the wavelength from 300 to 2000 nm. In addition to the Mie resonance, the broadband optical absorption of Si nanocone arrays is also affected by Wood-Rayleigh anomaly effect and metal impurities introduced in the fabrication process. PMID:25589290

Enhancement of Light Absorption in Silicon Nanowire Photovoltaic Devices with Dielectric and Metallic Grating Structures.

PubMed

Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu

2017-12-13

We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.

Investigation on nonlinear optical properties of MoS2 nanoflake, grown on silicon and quartz substrates

NASA Astrophysics Data System (ADS)

Bayesteh, S.; Mortazavi, S. Z.; Reyhani, A.

2018-03-01

In this study, MoS2 was directly synthesized by one-step thermal chemical vapour deposition (TCVD), on different substrates including Si/SiO2 and quartz, using MoO3 and sulfide powders as precursor. The XRD patterns demonstrate the high crystallinity of MoS2 on Si/SiO2 and quartz substrates. SEM confirmed the formation of MoS2 grown on both substrates. According to line width and frequency difference between the E1 2g and A1g in Raman spectroscopy, it is inferred that the MoS2 grown on Si/SiO2 substrate is monolayer and the MoS2 grown on quartz substrate is multilayer. Moreover, by assessment of MoS2 nanoflake band gap via UV-visible analysis, it verified the formation of few layer structures. In addition, the open-aperture and close-aperture Z-scan techniques were employed to study the nonlinear optical properties including nonlinear absorption and nonlinear refraction of the synthesized MoS2. All experiments were performed using a diode laser with a wavelength of 532 nm as light source. The monolayer MoS2 synthesized on Si/SiO2, display considerable two-photon absorption. However, the multilayer MoS2 synthesized on quartz displayed saturable absorption (SA). It is noticeable that both samples demonstrate obvious self-defocusing behaviour.

Absorption spectra measurements of the x-ray radiation heated SiO2 aerogel plasma in 'dog-bone' targets irradiated by high power laser pulses

NASA Astrophysics Data System (ADS)

Zhang, Y.; Dong, Q.-L.; Wang, S.-J.; Li, Y.-T.; Zhang, J.; Wei, H.-G.; Shi, J.-R.; Zhao, G.; Zhang, J.-Y.; Wen, T.-S.; Zhang, W.-H.; Hu, X.; Liu, S.-Y.; Ding, Y.-K.; Zhang, L.; Tang, Y.-J.; Zhang, B.-H.; Zheng, Z.-J.; Nishimura, H.; Fujioka, S.; Takabe, H.

2008-05-01

We studied the opacity effect of the SiO2 aerogel plasma heated by x-ray radiation produced by high power laser pulses irradiating the inner surface of golden 'dog-bone' targets. The PET crystal spectrometer was used to measure the absorption spectra of the plasmas in the range from 6.4 Å to 7.4 Å, among which the line emissions involving the K shell of Si ions from He-like to neutral atom were located. The experimental results were analyzed with Detailed-Level-Accounting method. As the plasma temperature increased, the characteristic lines of highly ionized ions gradually dominated the absorption spectrum.

Intestinal expression of human apolipoprotein A-IV in transgenic mice fails to influence dietary lipid absorption or feeding behavior.

PubMed Central

Aalto-Setälä, K; Bisgaier, C L; Ho, A; Kieft, K A; Traber, M G; Kayden, H J; Ramakrishnan, R; Walsh, A; Essenburg, A D; Breslow, J L

1994-01-01

Two transgenic mouse lines, expressing low or high amounts of human apo A-IV were created. In low and high expressor HuAIVTg mice on a chow diet, serum human apo A-IV levels were 6 and 25 times the normal human level and on a high fat diet, they were 12 and 77 times higher. Human apo A-IV was equally distributed between lipoprotein (mainly HDL) and lipid-free fractions. Intestinal absorption of radiolabeled cholesterol and triglycerides was unaffected in HuAIVTg mice. Vitamin A, carried exclusively in chylomicrons and their remnants, was catabolized normally. When an intragastric vitamin E bolus is given to the HuAIVTg mice, the initial absorption and appearance in triglyceride-rich lipoproteins was similar to that observed in normal mice. However, elevated amounts of vitamin E were subsequently observed in the VLDL of the HuAIVTg mice. Furthermore, in the fed state, serum VLDL triglycerides were markedly elevated in HuAIVTg mice. This effect was greater in high expressor mice. Serum total cholesterol was not elevated, but the distribution was altered in the HuAIVTg mice; VLDL-C was increased at the expense of VLDL-C. Kinetic studies suggested a delayed clearance of VLDL in HuAIVTg mice. Apo A-IV has been suggested to be a satiety factor, but no effect on feeding behavior or weight gain was observed in these HuAIVTg mice. In summary, our studies with HuAIVTg mice show that additional apo A-IV does not effect intestinal absorption of fat and fat-soluble vitamins, and at least chronic elevation of plasma apo A-IV does not effect feeding behavior in this model system. Images PMID:8163677

Tuning optical properties of magic number cluster (SiO2)4O2H4 by substitutional bonding with gold atoms.

PubMed

Cai, Xiulong; Zhang, Peng; Ma, Liuxue; Zhang, Wenxian; Ning, Xijing; Zhao, Li; Zhuang, Jun

2009-04-30

By bonding gold atoms to the magic number cluster (SiO(2))(4)O(2)H(4), two groups of Au-adsorbed shell-like clusters Au(n)(SiO(2))(4)O(2)H(4-n) (n = 1-4) and Au(n)(SiO(2))(4)O(2) (n = 5-8) were obtained, and their spectral properties were studied. The ground-state structures of these clusters were optimized by density functional theory, and the results show that in despite of the different numbers and types of the adsorbed Au atoms, the cluster core (SiO(2))(4)O(2) of T(d) point-group symmetry keeps almost unchanged. The absorption spectra were obtained by time-dependent density functional theory. From one group to the other, an extension of absorption wavelength from the UV-visible to the NIR region was observed, and in each group the absorption strengths vary linearly with the number of Au atoms. These features indicate their advantages for exploring novel materials with easily controlled tunable optical properties. Furthermore, due to the weak electronic charge transfer between the Au atoms, the clusters containing Au(2) dimers, especially Au(8)(SiO(2))(4)O(2), absorb strongly NIR light at 900 approximately 1200 nm. Such strong absorption suggests potential applications of these shell-like clusters in tumor cells thermal therapy, like the gold-coated silica nanoshells with larger sizes.

A fresnoite-structure-related mixed valent titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl: A flux crystal growth route to Ti(III) containing oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abeysinghe, Dileka; Smith, Mark D.; Loye, Hans-Conrad zur, E-mail: zurloye@mailbox.sc.edu

Single crystals of mixed valent barium titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were grown in a high temperature molten chloride flux involving an in situ reduction step. The fresnoite structure related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} crystallizes in the tetragonal space group P4/mbm with lattice parameters of a=8.6717(2) Å, c=18.6492(5) Å. The title compound exhibits a 3D structure consisting of 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} groups and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} groups that are linked via barium atoms. The in situmore » reduction of Ti(IV) to Ti(III) is achieved via the addition of metallic Mg to the flux to function as the reducing agent. The temperature dependence of the magnetic susceptibility shows simple paramagnetism above 100 K. There is a discontinuity in the susceptibility data below 100 K, which might be due to a structural change that takes place resulting in charge ordering. - Graphical abstract: The fresnoite structure related novel reduced barium titanium chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were synthesized via flux method. An in situ reduction of Ti(IV) to Ti(III) achieved using Mg metal. The 3D structure consists 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connected via barium atoms. Compound shows simple paramagnetism above 100 K. - Highlights: • The fresnoite related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} were grown via molten flux method. • The in situ reduction of Ti(IV) to Ti(III) is achieved using metallic Mg. • 2D layers of Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connect via Ba atoms. • The magnetic susceptibility shows simple paramagnetism above 100 K.« less

VARIATIONS OF ABSORPTION TROUGHS IN THE QUASAR SDSS J125216.58+052737.7

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhi-Fu; Qin, Yi-Ping, E-mail: zhichenfu@126.com

2015-01-20

In this work, we analyze the spectra of quasar J125216.58+052737.7 (z {sub em} = 1.9035) which was observed by SDSS-I/II on 2003 January 30 and by BOSS on 2011 April 2. Both the continuum and the absorption spectra of this quasar show obvious variations between the two epochs. In the SDSS-I/II spectrum, we detect 8 C IV λλ1548,1551 absorption systems, which are detected at z {sub abs} = 1.9098, 1.8948, 1.8841, 1.8770, 1.8732, 1.8635, 1.8154, and 1.7359, respectively, and one Mg II λλ2796,2803 absorption system at z {sub abs} = 0.9912. Among these absorption systems, two C IV λλ1548,1551 absorptionmore » systems at z {sub abs} = 1.9098 and 1.7359 and the Mg II λλ2796,2803 absorption system are imprinted on the BOSS spectrum as well, and have similar absorption strengths when compared to those measured from the SDSS-I/II spectrum. Three C IV λλ1548,1551 absorption systems at z {sub abs} = 1.8948, 1.8841, and 1.8770 are also detected in the BOSS spectrum, while their absorption strengths are much weaker than those measured from the SDSS-I/II spectrum; three systems at z {sub abs} = 1.8732, 1.8635, and 1.8154 disappeared from the BOSS spectrum. Based on the variability analysis, the absorption systems that disappeared and weakened are likely to be intrinsic to the quasar. If these intrinsic absorption gases are blown away from the central region of the quasar, with respect to the quasar system, the absorption systems that disappeared would have separation velocities of 3147 kms{sup –1}, 4161 km s{sup –1}, and 9241 km s{sup –1}, while the absorption systems that weakened would have separation velocities of 900 km s{sup –1}, 2011 km s{sup –1}, and 2751 km s{sup –1}. Well-coordinated variations of the six C IV λλ1548,1551 absorption systems that disappeared and weakened, occurring on a timescale of 1026.7 days at the quasar rest frame, can be interpreted as a result of global changes in the ionization state of the absorbing gas.« less

Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

NASA Technical Reports Server (NTRS)

Wang, W. B.; Cavicchia, M. A.; Alfano, R. R.

1996-01-01

Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

Controlling enhanced absorption in graphene metamaterial

NASA Astrophysics Data System (ADS)

Zhou, Qihui; Liu, Peiguo; Bian, Li-an; Liu, Hanqing; Liu, Chenxi; Chen, Genghui

2018-04-01

In this paper, a controllable terahertz (THz) metamaterial absorber (MA) is designed with the circuit analog method. Taking advantage of the patterned graphene on SiO2/doped Si/polyimide substrates with a gold reflector, the controllable MA achieves perfect absorption at 0.75 THz. The chemical potential of graphene is regulated by controlling the voltage between graphene and doped Si layers. As the chemical potential varies from 0 eV to 0.5 eV, the MA is changed from reflection (<0.37) to absorption (>0.99). The distributions of surface current and electric field are illustrated to analyze the resonant characteristic of patterned graphene. According to the resonant characteristic, we introduce patterned graphene elements with different dimension in a unit cell, which effectively extends the effective absorption bandwidth (absorption > 0 . 9) from 0.67-0.93 THz to 0.52-0.95 THz. Moreover, replacing part of the graphene structure with gold, the switchable MA is turned into a frequency tunable MA. The absorption peak moves from 0.62 THz to 0.92 THz as the chemical potential increases from 0.1 eV to 0.5 eV. These designs overcome limitation of traditional absorbers and exhibit great potentials in many practical applications.

The Rest-frame Ultraviolet Spectra of UV-selected Active Galactic Nuclei at z ~ 2-3

NASA Astrophysics Data System (ADS)

Hainline, Kevin N.; Shapley, Alice E.; Greene, Jenny E.; Steidel, Charles C.

2011-05-01

We present new results for a sample of 33 narrow-lined UV-selected active galactic nuclei (AGNs), identified in the course of a spectroscopic survey for star-forming galaxies at z ~ 2-3. The rest-frame UV composite spectrum for our AGN sample shows several emission lines characteristic of AGNs, as well as interstellar absorption features detected in star-forming Lyman break galaxies (LBGs). We report a detection of N IV] λ1486, which has been observed in high-redshift radio galaxies, as well as in rare optically selected quasars. The UV continuum slope of the composite spectrum is significantly redder than that of a sample of non-AGN UV-selected star-forming galaxies. Blueshifted Si IV absorption provides evidence for outflowing highly ionized gas in these objects at speeds of ~103 km s-1, quantitatively different from what is seen in the outflows of non-AGN LBGs. Grouping the individual AGNs by parameters such as the Lyα equivalent width, redshift, and UV continuum magnitude allows for an analysis of the major spectroscopic trends within the sample. Stronger Lyα emission is coupled with weaker low-ionization absorption, which is similar to what is seen in the non-AGN LBGs, and highlights the role that cool interstellar gas plays in the escape of Lyα photons. However, the AGN composite does not show the same trends between Lyα strength and extinction seen in the non-AGN LBGs. These results represent the first such comparison at high redshift between star-forming galaxies and similar galaxies that host AGN activity. Based, in part, on data obtained at the W. M. Keck Observatory, which is operated as a scientific partnership among the California Institute of Technology, the University of California, and NASA, and was made possible by the generous financial support of the W. M. Keck Foundation.

Co-delivery of platinum drug and siNotch1 with micelleplex for enhanced hepatocellular carcinoma therapy.

PubMed

Shen, Song; Sun, Chun-Yang; Du, Xiao-Jiao; Li, Hong-Jun; Liu, Yang; Xia, Jin-Xing; Zhu, Yan-Hua; Wang, Jun

2015-11-01

As part of HCC tumor cellularity, cancer stem cells (CSCs) are considered a major obstacle to eradicate hepatocellular carcinoma (HCC), which is the third most common cause of cancer-related death worldwide, and the accumulation of chemotherapeutic drug-resistant CSCs invariably accounts for poor prognosis and HCC relapse. In the present study, we explored the efficacy of co-delivery of platinum drug and siRNA targeting Notch1 to treat CSCs-harboring HCC. To overcome the challenging obstacles of platinum drug and siRNA in the systemic administration, we developed a micellar nanoparticle (MNP) to deliver platinum(IV) prodrug and siNotch1, hereafter referred to as (Pt(IV))MNP/siNotch1. We demonstrated that (Pt(IV))MNP/siNotch1 was able to efficiently deliver two drugs into both non-CSCs and CSCs of SMMC7721, a HCC cell line. We further found that siRNA-mediated inhibition of Notch1 suppression can increase the sensitivity of HCC cells to platinum drugs and decrease the percentage of HCC CSCs, and consequently resulting in enhanced proliferation inhibition and apoptosis induction in HCC cells in vitro. Moreover, our results indicated that the combined drug delivery system can remarkably augment drug enrichment in tumor tissues, substantially suppressing the tumor growth while avoiding the accumulation of CSCs in a synergistic manner in the SMMC7721 xenograft model. Copyright © 2015 Elsevier Ltd. All rights reserved.

Color Doppler Ultrasound and Gamma Imaging of Intratumorally Injected 500 nm Iron-Silica Nanoshells

PubMed Central

Liberman, Alexander; Wu, Zhe; Barback, Christopher V.; Viveros, Robert; Blair, Sarah L.; Ellies, Lesley G.; Vera, David R.; Mattrey, Robert F.; Kummel, Andrew C.; Trogler, William C.

2013-01-01

Perfluoropentane gas filled iron-silica nanoshells have been developed as stationary ultrasound contrast agents for marking tumors to guide surgical resection. It is critical to establish their long term imaging efficacy, as well as biodistribution. This work shows that 500 nm Fe-SiO2 nanoshells can be imaged by color Doppler ultrasound over the course of 10 days in Py8119 tumor bearing mice. The 500 nm non-biodegradable SiO2 and biodegradable Fe-SiO2 nanoshells were functionalized with diethylenetriamine pentaacetic acid (DTPA) ligand and radiolabeled with 111In3+ for biodistribution studies in nu/nu mice. The majority of radioactivity was detected in the liver and kidneys following intravenous (IV) administration of nanoshells to healthy animals. By contrast, after nanoshells were injected intratumorally, most of the radioactivity remained at the injection site; however, some nanoshells escaped into circulation and were distributed similarly as those given intravenously. For intratumoral delivery of nanoshells and IV delivery to healthy animals, little difference was seen between the biodistribution of SiO2 and biodegradable Fe-SiO2 nanoshells. However, when nanoshells were administered IV to tumor bearing mice, a significant increase was observed in liver accumulation of SiO2 nanoshells relative to biodegradable Fe-SiO2 nanoshells. Both SiO2 and Fe-SiO2 nanoshells accumulate passively in proportion to tumor mass, during intravenous delivery of nanoshells. This is the first report of the biodistribution following intratumoral injection of any biodegradable silica particle, as well as the first report demonstrating the utility of DTPA-111In labeling for studying silica nanoparticle biodistributions. PMID:23802554

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

NASA Astrophysics Data System (ADS)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Dynamic Modeling of Silicon Bioavailability, Uptake, Transport, and Accumulation: Applicability in Improving the Nutritional Quality of Tomato

PubMed Central

López-Pérez, Mari C.; Pérez-Labrada, Fabián; Ramírez-Pérez, Lino J.; Juárez-Maldonado, Antonio; Morales-Díaz, América B.; González-Morales, Susana; García-Dávila, Luis R.; García-Mata, Jesús; Benavides-Mendoza, Adalberto

2018-01-01

Silicon is an essential nutrient for humans, additionally is beneficial for terrestrial plants. In plants Si enhances tolerance to different types of stress; in humans, it improves the metabolism and increases the strength of skeletal and connective tissues as well as of the immune system. Most of the Si intake of humans come from edible plants creating a double benefit: first, because the absorption of Si increases the antioxidants and other phytochemicals in plants, thereby increasing its functional value, and second because the higher concentration of Si in plants increases intake in human consumers. Therefore, it is desirable to raise the availability of Si in the human diet through the agronomic management of Si accumulator species, such as corn, wheat, rice, soybeans, and beans. But also in such species as tomatoes, carrots, and other vegetables, whose per capita consumption has increased. However, there are few systematized recommendations for the application and management of Si fertilizers based on the physicochemical factors that determine their availability, absorption, transport, and deposition in cells and tissues. This study presents updated information about edaphic and plant factors, which determine the absorption, transport, and deposition rates in edible organs. The information was integrated into an estimated dynamic model that approximates the processes previously mentioned in a model that represents a tomato crop in soil and soilless conditions. In the model, on the other hand, was integrated the available information about key environmental factors related to Si absorption and mobilization, such as the temperature, pH, and soil organic matter. The output data of the model were compared against information collected in the literature, finding an adequate adjustment. The use of the model for educational or technical purposes, including the possibility of extending it to other horticultural crops, can increase the understanding of the agronomic management of Si in plants. PMID:29868098

Dynamic Modeling of Silicon Bioavailability, Uptake, Transport, and Accumulation: Applicability in Improving the Nutritional Quality of Tomato.

PubMed

López-Pérez, Mari C; Pérez-Labrada, Fabián; Ramírez-Pérez, Lino J; Juárez-Maldonado, Antonio; Morales-Díaz, América B; González-Morales, Susana; García-Dávila, Luis R; García-Mata, Jesús; Benavides-Mendoza, Adalberto

2018-01-01

Silicon is an essential nutrient for humans, additionally is beneficial for terrestrial plants. In plants Si enhances tolerance to different types of stress; in humans, it improves the metabolism and increases the strength of skeletal and connective tissues as well as of the immune system. Most of the Si intake of humans come from edible plants creating a double benefit: first, because the absorption of Si increases the antioxidants and other phytochemicals in plants, thereby increasing its functional value, and second because the higher concentration of Si in plants increases intake in human consumers. Therefore, it is desirable to raise the availability of Si in the human diet through the agronomic management of Si accumulator species, such as corn, wheat, rice, soybeans, and beans. But also in such species as tomatoes, carrots, and other vegetables, whose per capita consumption has increased. However, there are few systematized recommendations for the application and management of Si fertilizers based on the physicochemical factors that determine their availability, absorption, transport, and deposition in cells and tissues. This study presents updated information about edaphic and plant factors, which determine the absorption, transport, and deposition rates in edible organs. The information was integrated into an estimated dynamic model that approximates the processes previously mentioned in a model that represents a tomato crop in soil and soilless conditions. In the model, on the other hand, was integrated the available information about key environmental factors related to Si absorption and mobilization, such as the temperature, pH, and soil organic matter. The output data of the model were compared against information collected in the literature, finding an adequate adjustment. The use of the model for educational or technical purposes, including the possibility of extending it to other horticultural crops, can increase the understanding of the agronomic management of Si in plants.

Si3 AlP: A New Promising Material for Solar Cell Absorber

NASA Astrophysics Data System (ADS)

Yang, Jihui; Zhai, Yingteng; Liu, Hengrui; Xiang, Hongjun; Gong, Xingao; Wei, Suhuai

2014-03-01

First-principles calculations are performed to study the structural and optoelectronic properties of the newly synthesized nonisovalent and lattice-matched (Si2)0.6(AlP)0.4 alloy [T. Watkins et al., J. Am. Chem. Soc. 2011, 133, 16212.] The most stable structure of Si3AlP is a superlattice along the <111>direction with separated AlP and Si layers, which has a similar optical absorption spectrum to silicon. The ordered C1c1-Si3AlP is found to be the most stable one among all the structures with -AlPSi3- motifs, in agreement with the experimental suggestions. We predict that C1c1-Si3AlP has good optical properties, i.e., it has a larger fundamental band gap and a smaller direct band gap than Si, thus it has much higher absorption in the visible light region, making it a promising candidate for improving the performance of the existing Si-based solar cells.

Evidence of redshifts in the average solar line profiles of C IV and Si IV from OSO-8 observations

NASA Technical Reports Server (NTRS)

Roussel-Dupre, D.; Shine, R. A.

1982-01-01

Line profiles of C IV and Si V obtained by the Colorado spectrometer on OSO-8 are presented. It is shown that the mean profiles are redshifted with a magnitude varying from 6-20 km/s, and with a mean of 12 km/s. An apparent average downflow of material in the 50,000-100,000 K temperature range is measured. The redshifts are observed in the line center positions of spatially and temporally averaged profiles and are measured either relative to chromospheric Si I lines or from a comparison of sun center and limb profiles. The observations of 6-20 km/s redshifts place constraints on the mechanisms that dominate EUV line emission since it requires a strong weighting of the emission in regions of downward moving material, and since there is little evidence for corresponding upward moving materials in these lines.

Facile Reductive Silylation of UO22+ to Uranium(IV) Chloride.

PubMed

Kiernicki, John J; Zeller, Matthias; Bart, Suzanne C

2017-01-19

General reductive silylation of the UO 2 2+ cation occurs readily in a one-pot, two-step stoichiometric reaction at room temperature to form uranium(IV) siloxides. Addition of two equivalents of an alkylating reagent to UO 2 X 2 (L) 2 (X=Cl, Br, I, OTf; L=triphenylphosphine oxide, 2,2'-bipyridyl) followed by two equivalents of a silyl (pseudo)halide, R 3 Si-X (R=aryl, alkyl, H; X=Cl, Br, I, OTf, SPh), cleanly affords (R 3 SiO) 2 UX 2 (L) 2 in high yields. Support is included for the key step in the process, reduction of U VI to U V . This procedure is applicable to a wide range of commercially available uranyl salts, silyl halides, and alkylating reagents. Under this protocol, one equivalent of SiCl 4 or two equivalents of Me 2 SiCl 2 results in direct conversion of the uranyl to uranium(IV) tetrachloride. Full spectroscopic and structural characterization of the siloxide products is reported. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of deposited CdS thin films by Spray Pyrolysis method and used in Cd/CdS/p-Si/Al structure

NASA Astrophysics Data System (ADS)

Özakın, Oǧuzhan; Aktaş, Şeydanur; Güzeldir, Betül; Saǧlam, Mustafa

2017-04-01

In our study, as p-type crystalline Si substrate was used. Omic contact was performed by evaporating Al metal on the matt surface of crystal. On the other surface of it CdS thin film were enlarged with the technique of Spray Pyrolysis. Structural characteristics of the grown thin film was examined SEM and EDAX image. When examining SEM image of CdS thin film were totally covered the p-Si crystal surface of it was nearly homogeneous and The EDAX spectra showed that the expected different ratios metal percent exist in the alloys, approximately. On the CdS films whose surface features were investigated, at 10-7 torr pressure was obtained Cd/CdS/p-Si/Al sandwich structure by evaporating Cd. Firstly, the I-V (current-voltage) characteristics on 80K between 320K at room temperature of this structure was measured. I-V characteristics of the examined at parameters diodes calculation, Thermionic Emission, were used. The characteristic parameters such as barrier height and ideality factor of this structure have been calculated from the forward bias I-V characteristics. Consequently, it was seen that CdS thin film grown on p-Si semiconductor will be used confidently in Cd/p-Si metal-semiconductor contacts thanks to Spray Pyrolysis method.

Synthesis and characterization of nanosilver-silicone hydrogel composites for inhibition of bacteria growth.

PubMed

Helaly, F M; El-Sawy, S M; Hashem, A I; Khattab, A A; Mourad, R M

2017-02-01

Nanosilver-silicone hydrogel (NAgSiH) composites for contact lenses were synthesized to asses the antimicrobial effects. Silicone hydrogel (SiH) films were synthesized followed by impregnation in silver nitrate solutions (10, 20, 30, 40, 60, 80ppm) and in-situ chemical reduction of silver ions using sodium borohydride (NaBH 4 ). The silver nano particles (AgNPS) were identified by UV-vis absorption spectroscopy, Energy-dispersive X-ray spectroscopy (EDX) mapping and EDX spectrum. Physico-mechanical and chemical properties of NAgSIH films were studied. The antimicrobial effect of the hydrogels against Escherichia coli, Pseudomonas aeruginosa, Bacillus subtilis and Staphylococcus aureus was evaluated. The numbers of viable bacterial cells on NAgSiH surface or in solution compared to control SiH were examined. The NAgSiH films were successfully synthesized. FTIR results indicated that AgNPS had no effect on the bulk structure of the prepared SiH films. From TGA analysis, NAgSiH(R80) and SiH(R0) films had the same maximum decomposition temperature (404°C). UV-vis absorption spectroscopy and EDX mapping and spectrum emphasized that AgNPS were in spherical shape. The maximum absorption wavelength of NAgSiH films were around 400nm. The light transmittance decreased as the concentration of AgNPS increased, but still greater than 90% at wavelength around 555nm. The Young's modulus increased gradually from 1.06MPa of SiH(R0) to highest value 1.38MPa of NAgSiH(R80). AgNPS incorporated into SiH films reduced the bacterial cell growth and prevented colonization. Groups NAgSiH(R60,R80) demonstrated an excellent reduction in bacterial viability in solution and on the SiH surface. NAgSiH composites were successfully synthesized and possessed an excellent antimicrobial effects. Copyright © 2016 British Contact Lens Association. Published by Elsevier Ltd. All rights reserved.

Equatorial Ligand Perturbations Influence the Reactivity of Manganese(IV)-Oxo Complexes.

PubMed

Massie, Allyssa A; Denler, Melissa C; Cardoso, Luísa Thiara; Walker, Ashlie N; Hossain, M Kamal; Day, Victor W; Nordlander, Ebbe; Jackson, Timothy A

2017-04-03

Manganese(IV)-oxo complexes are often invoked as intermediates in Mn-catalyzed C-H bond activation reactions. While many synthetic Mn IV -oxo species are mild oxidants, other members of this class can attack strong C-H bonds. The basis for these reactivity differences is not well understood. Here we describe a series of Mn IV -oxo complexes with N5 pentadentate ligands that modulate the equatorial ligand field of the Mn IV center, as assessed by electronic absorption, electron paramagnetic resonance, and Mn K-edge X-ray absorption methods. Kinetic experiments show dramatic rate variations in hydrogen-atom and oxygen-atom transfer reactions, with faster rates corresponding to weaker equatorial ligand fields. For these Mn IV -oxo complexes, the rate enhancements are correlated with both 1) the energy of a low-lying 4 E excited state, which has been postulated to be involved in a two-state reactivity model, and 2) the Mn III/IV reduction potentials. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

PubMed

Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

2010-08-01

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

Multiple infrared bands absorber based on multilayer gratings

NASA Astrophysics Data System (ADS)

Liu, Xiaoyi; Gao, Jinsong; Yang, Haigui; Wang, Xiaoyi; Guo, Chengli

2018-03-01

The present study offers an Ag/Si multilayer-grating microstructure based on an Si substrate. The microstructure exhibits designable narrowband absorption in multiple infrared wavebands, especially in mid- and long-wave infrared atmospheric windows. We investigate its resonance mode mechanism, and calculate the resonance wavelengths by the Fabry-Perot and metal-insulator-metal theories for comparison with the simulation results. Furthermore, we summarize the controlling rules of the absorption peak wavelength of the microstructure to provide a new method for generating a Si-based device with multiple working bands in infrared.

Magnetic and optical properties of carbon and silicon decorated free standing buckled germanene: A DFT approach

NASA Astrophysics Data System (ADS)

Dhar, Namrata; Jana, Debnarayan

2018-04-01

Ab initio magnetic and optical properties of group IV elements (carbon (C) and silicon (Si)) decorated free standing (FS) buckled germanene systems have been employed theoretically. Our study elucidates that, decoration of these elements in proper sites with suitable concentrations form dynamically stable configurations. Band structure is modified due to decoration of these atoms in Ge-nanosheet and pristine semi-metallic germanene undergoes to semiconductors with a finite amount of bandgap. Interestingly, this bandgap value meets closely the requirement of gap for field effect transistor (FET) applications. Moreover, significant magnetic moment is induced in non-magnetic germanene for C decorated structure and ground state in anti-ferromagnetic in nature for this structure. Along with magnetic property, optical properties like dielectric functions, optical absorption, electron energy loss spectra (EELS), refractive index and reflectivity of these systems have also been investigated. Maximum number of plasma frequencies appear for Si decorated configuration considering both parallel and perpendicular polarizations. In addition, birefringence characteristics of these configurations have also been studied as it is an important parameter in various applications of optical devices, liquid crystal displays, light modulators etc.

Systematic Control of Self-Assembled Au Nanoparticles and Nanostructures Through the Variation of Deposition Amount, Annealing Duration, and Temperature on Si (111).

PubMed

Li, Ming-Yu; Sui, Mao; Pandey, Puran; Zhang, Quanzhen; Kim, Eun-Soo; Lee, Jihoon

2015-12-01

The size, density, and configurations of Au nanoparticles (NPs) can play important roles in controlling the electron mobility, light absorption, and localized surface plasmon resonance, and further in the Au NP-assisted nanostructure fabrications. In this study, we present a systematical investigation on the evolution of Au NPs and nanostructures on Si (111) by controlling the deposition amount (DA), annealing temperature (AT), and dwelling time (DT). Under an identical growth condition, the morphologies of Au NPs and nanostructures drastically evolve when the DA is only slightly varied, based on the Volmer-Weber and coalescence models: i.e. I: mini NPs, II: mid-sized round dome-shaped Au NPs, III: large Au NPs, and IV: coalesced nanostructures. With the AT control, three distinctive ranges are observed: i.e., NP nucleation, Au NPs maturation and melting. The gradual dimensional expansion of Au NPs is always compensated with the density reduction, which is explained with the thermodynamic theory. The DT effect is relatively minor on Au NPs, a sharp contrast to other metallic NPs, which is discussed based on the Ostwald-ripening.

A first-principles study of group IV and VI atoms doped blue phosphorene

NASA Astrophysics Data System (ADS)

Bai, Ruimin; Chen, Zheng; Gou, Manman; Zhang, Yixin

2018-02-01

Using first-principles calculations, we have systematically investigated the structural, electronic and magnetic properties of blue phosphorene doped by group IV and VI atoms, including C, Si, Ge, Sn, O, S, Se and Te. All the doped systems are energetically stable. Only C, Si, Ge and O-substituted systems show the characteristics of spin polarization and the magnetic moments are all 1.0 μB. Moreover, we found that C, Si, Ge and O doped systems are indirect bandgap semiconductors, while Sn, S, Se and Te doped systems present metallic property. These results show that blue phosphorene can be used prospectively in optoelectronic and spintronic devices.

Strong light absorption capability directed by structured profile of vertical Si nanowires

NASA Astrophysics Data System (ADS)

Chaliyawala, Harsh A.; Ray, Abhijit; Pati, Ranjan K.; Mukhopadhyay, Indrajit

2017-11-01

Si nanowire arrays (SiNWAs) with random fractal geometry was fabricated using fast, mask-less, non-lithographic and facile approach by incorporating metal assisted electroless etching of n-type Si (111) substrates. The FESEM images demonstrate the formation of nano-porous surfaces that provide effective path for the incoming light to get trapped into the cavity of nanowires. The length of NWs increases from ∼1 to 10 μm with increase in the etching time having a diameter in the range of ∼25-82 nm. A transformation from zero to first order kinetics after a prolonged etching has been determined. The synthesized SiNWAs show high light trapping properties, including a maximum photon absorption across the entire visible and near IR range below the band gap of Si. The SiNWAs etched for 15 min exhibit extremely low specular and total reflectance of ∼0.2% and 4.5%, respectively over a broadband of wavelength. The reduction in the reflection loss is accompanied with the gradient of refractive index from air to Si substrate as well as due to the sub-wavelength structures, which manifests the light scattering effect. The COMSOL multiphysics simulation has been performed to study the high broadband light absorption capability in terms of the strong localized light field confinement by varying the length of the nanowire. Moreover, the SiNWs induces the dewetting ability at the solid/liquid interface and enhances the superhydrophobicity. Furthermore, a maximum length scale of 100-200 nm manifests a strong heterogeneity along the planar section of the surface of SiNWs. The study thus provides an insight on the light propagation into the random fractal geometries of Si nanowires. These outstanding properties should contribute to the structural optimization of various optoelectronic and photonic devices.

Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray absorption fine structures study at the Ni and Si L3,2 edge

NASA Astrophysics Data System (ADS)

Naftel, S. J.; Coulthard, I.; Sham, T. K.; Xu, D.-X.; Erickson, L.; Das, S. R.

1999-05-01

We report a Ni and Si L3,2-edge x-ray absorption near edge structures (XANES) study of nickel-silicon interaction in submicron (0.15 and 0.2 μm) lines on a n-Si(100) wafer as well as a series of well characterized Ni-Si blanket films. XANES measurements recorded in both total electron yield and soft x-ray fluorescence yield indicate that under the selected silicidation conditions, the more desirable low resistivity phase, NiSi, is indeed the dominant phase in the subhalf-micron lines although the formation of this phase is less complete as the line becomes narrower and this is accompanied by a Ni rich surface.

Synthesis and characterization of group IV semiconductor nanowires by vapor-liquid-solid growth

NASA Astrophysics Data System (ADS)

Lew, Kok-Keong

There is currently intense interest in one-dimensional nanostructures, such as nanotubes and nanowires, due to their potential to test fundamental concepts of dimensionality and to serve as building blocks for nanoscale devices. Vapor-liquid-solid (VLS) growth, which is one of the most common fabrication methods, has been used to produce single crystal semiconductor nanowires such as silicon (Si), germanium (Ge), and gallium arsenide (GaAs). In the VLS growth of Group IV semiconductor nanowires, a metal, such as gold (Au) is used as a catalyst agent to nucleate whisker growth from a Si-containing (silane (SIH4)) or Ge-containing vapor (germane (GeH 4)). Au and Si/Ge form a liquid alloy that has a eutectic temperature of around 360°C, which, upon supersaturation, nucleates the growth of a Si or Ge wire. The goal of this work is to develop a more fundamental understanding of VLS growth kinetics and intentional doping of Group IV semiconductor nanowires in order to better control the properties of the nanowires. The fabrication of p-type and n-type Si nanowires will be studied via the addition of dopant gases such as diborane (B2H 6), trimethylboron (TMB), and phosphine (PH3) during growth. The use of gaseous dopant sources provides more flexibility in growth, particularly for the fabrication of p-n junctions and structures with axial dopant variations (e.g. p+-p- p+). The study is then extended to fabricate SiGe alloy nanowires by mixing SiH4 and GeH4. Bandgap engineering in Si/SiGe heterostructures can lead to novel devices with improved performance compared to those made entirely of Si. The scientific findings will lead to a better understanding of the fabrication of Si/SiGe axial and radial heterostructure nanowires for functional nanowire device structures, such as heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). Eventually, the central theme of this research is to provide a scientific knowledge base and foundation for the design of Si, Ge, and SiGe nanostructures that will be of importance in nanoscale device applications.

Heterochromatic siRNAs and DDM1 Independently Silence Aberrant 5S rDNA Transcripts in Arabidopsis

PubMed Central

Blevins, Todd; Pontes, Olga; Pikaard, Craig S.; Meins, Frederick

2009-01-01

5S ribosomal RNA gene repeats are arranged in heterochromatic arrays (5S rDNA) situated near the centromeres of Arabidopsis chromosomes. The chromatin remodeling factor DDM1 is known to maintain 5S rDNA methylation patterns while silencing transcription through 5S rDNA intergenic spacers (IGS). We mapped small-interfering RNAs (siRNA) to a composite 5S rDNA repeat, revealing a high density of siRNAs matching silenced IGS transcripts. IGS transcript repression requires proteins of the heterochromatic siRNA pathway, including RNA polymerase IV (Pol IV), RNA-DEPENDENT RNA POLYMERASE 2 (RDR2) and DICER-LIKE 3 (DCL3). Using molecular and cytogenetic approaches, we show that the DDM1 and siRNA-dependent silencing effects are genetically independent. DDM1 suppresses production of the siRNAs, however, thereby limiting RNA-directed DNA methylation at 5S rDNA repeats. We conclude that DDM1 and siRNA-dependent silencing are overlapping processes that both repress aberrant 5S rDNA transcription and contribute to the heterochromatic state of 5S rDNA arrays. PMID:19529764

Chemoselective Hydrogenation with Supported Organoplatinum(IV) Catalyst on Zn(II)-Modified Silica

DOE Office of Scientific and Technical Information (OSTI.GOV)

Camacho-Bunquin, Jeffrey; Ferrandon, Magali; Sohn, Hyuntae

For this research, well-defined organoplatinum(IV) sites were grafted on a Zn(II)-modified SiO 2 support via surface organometallic chemistry in toluene at room temperature. Solid-state spectroscopies including XAS, DRIFTS, DRUV–vis, and solid-state (SS) NMR enhanced by dynamic nuclear polarization (DNP), as well as TPR-H 2 and TEM techniques revealed highly dispersed (methylcyclopentadienyl)methylplatinum(IV) sites on the surface ((MeCp)PtMe/Zn/SiO 2, 1). In addition, computational modeling suggests that the surface reaction of (MeCp)PtMe 3 with Zn(II)-modified SiO 2 support is thermodynamically favorable (ΔG = -12.4 kcal/mol), likely due to the increased acidity of the hydroxyl group, as indicated by NH 3-TPD and DNP-enhanced 17O{more » 1H} SSNMR. In situ DRIFTS and XAS hydrogenation experiments reveal the probable formation of a surface Pt(IV)-H upon hydrogenolysis of Pt-Me groups. The heterogenized organoplatinum(IV)-hydride sites catalyze the selective partial hydrogenation of 1,3-butadiene to butenes (up to 95%) and the reduction of nitrobenzene derivatives to anilines (up to 99%) with excellent tolerance of reduction-sensitive functional groups (olefin, carbonyl, nitrile, halogens) under mild reaction conditions.« less

Chemoselective Hydrogenation with Supported Organoplatinum(IV) Catalyst on Zn(II)-Modified Silica

DOE Office of Scientific and Technical Information (OSTI.GOV)

Camacho-Bunquin, Jeffrey; Ferrandon, Magali; Sohn, Hyuntae

Well-defined organoplatinum(IV) sites were grafted on a Zn(II)-modified SiO2 support via surface organometallic chemistry in toluene at room temperature. Solid-state spectroscopies including XAS, DRIFTS, DRUV-Vis, and solid-state (SS)NMR enhanced by dynamic nuclear polarization (DNP), as well as TPR-H2 and TEM techniques revealed highly dispersed (methylcyclopentadi-enyl)methylplatinum(IV) sites on the surface ((MeCp)PtMe/Zn/SiO2, 1). In addition, computational modelling suggests that the surface reaction of (MeCp)PtMe3 with Zn(II)-modified SiO2 support is thermodynamically favorable (ΔG = -12.4 kcal/mol), likely due to the increased acidity of the hydroxyl group, as confirmed by NH3-TPD and DNP-enhanced 17O{1H} SSNMR. In situ DRIFTS and XAS hydrogenation experiments reveal themore » formation of a surface Pt(IV)-H upon hydrogenolysis of Pt-Me groups. The heterogenized organoplatinum(IV)-H sites catalyze the selective partial hydrogenation of 1,3-butadiene to butenes (up to 95%) and the reduction of nitrobenzene derivatives to anilines (up to 100%) with excellent tolerance of reduction-sensitive func-tional groups (olefin, carbonyl, nitrile, halogens) under mild reaction conditions.« less

Chemoselective Hydrogenation with Supported Organoplatinum(IV) Catalyst on Zn(II)-Modified Silica

DOE PAGES

Camacho-Bunquin, Jeffrey; Ferrandon, Magali; Sohn, Hyuntae; ...

2018-02-27

For this research, well-defined organoplatinum(IV) sites were grafted on a Zn(II)-modified SiO 2 support via surface organometallic chemistry in toluene at room temperature. Solid-state spectroscopies including XAS, DRIFTS, DRUV–vis, and solid-state (SS) NMR enhanced by dynamic nuclear polarization (DNP), as well as TPR-H 2 and TEM techniques revealed highly dispersed (methylcyclopentadienyl)methylplatinum(IV) sites on the surface ((MeCp)PtMe/Zn/SiO 2, 1). In addition, computational modeling suggests that the surface reaction of (MeCp)PtMe 3 with Zn(II)-modified SiO 2 support is thermodynamically favorable (ΔG = -12.4 kcal/mol), likely due to the increased acidity of the hydroxyl group, as indicated by NH 3-TPD and DNP-enhanced 17O{more » 1H} SSNMR. In situ DRIFTS and XAS hydrogenation experiments reveal the probable formation of a surface Pt(IV)-H upon hydrogenolysis of Pt-Me groups. The heterogenized organoplatinum(IV)-hydride sites catalyze the selective partial hydrogenation of 1,3-butadiene to butenes (up to 95%) and the reduction of nitrobenzene derivatives to anilines (up to 99%) with excellent tolerance of reduction-sensitive functional groups (olefin, carbonyl, nitrile, halogens) under mild reaction conditions.« less

A Catalog of Broad Absorption Line Quasars from the Sloan Digital Sky Survey Third Data Release

NASA Astrophysics Data System (ADS)

Trump, Jonathan R.; Hall, Patrick B.; Reichard, Timothy A.; Richards, Gordon T.; Schneider, Donald P.; Vanden Berk, Daniel E.; Knapp, Gillian R.; Anderson, Scott F.; Fan, Xiaohui; Brinkman, J.; Kleinman, S. J.; Nitta, Atsuko

2006-07-01

We present a total of 4784 unique broad absorption line quasars from the Sloan Digital Sky Survey Third Data Release. An automated algorithm was used to match a continuum to each quasar and to identify regions of flux at least 10% below the continuum over a velocity range of at least 1000 km s-1 in the C IV and Mg II absorption regions. The model continuum was selected as the best-fit match from a set of template quasar spectra binned in luminosity, emission line width, and redshift, with the power-law spectral index and amount of dust reddening as additional free parameters. We characterize our sample through the traditional ``balnicity'' index and a revised absorption index, as well as through parameters such as the width, outflow velocity, fractional depth, and number of troughs. From a sample of 16,883 quasars at 1.7<=z<=4.38, we identify 4386 (26.0%) quasars with broad C IV absorption, of which 1756 (10.4%) satisfy traditional selection criteria. From a sample of 34,973 quasars at 0.5<=z<=2.15, we identify 457 (1.31%) quasars with broad Mg II absorption, 191 (0.55%) of which satisfy traditional selection criteria. We also provide a supplementary list of 39 visually identified z>4.38 quasars with broad C IV absorption. We find that broad absorption line quasars may have broader emission lines on average than other quasars.

Effect of Different Silicon Sources on Yield and Silicon Uptake of Rice Grown under Varying Phosphorus Rates

PubMed Central

Agostinho, Flavia B.; Tubana, Brenda S.; Martins, Murilo S.; Datnoff, Lawrence E.

2017-01-01

A series of pot experiments were conducted to: (1) evaluate the effects of different Si sources (soil- and foliar-applied) on grain yield and Si accumulation of rice supplied with varying P rates, and (2) evaluate Si absorption of rice using foliar- and soil-applied Si fertilizers. Three P rates, (0, 112, and 224 kg ha−1) combined with five Si treatments (wollastonite and slag applied at 4.5 ton ha−1 and one foliar Si solution applied at 20, 40 and 80 mg Si L−1) and a check were arranged in a randomized complete block design with four replications. The presence of P and Si in the soil created a synergistic effect on soil Al, Mn, and As (P < 0.01), but not on rice growth and P uptake. Wollastonite and slag application were most effective in raising rice Si content than foliar applied Si (P < 0.001). While there was an improvement in biomass (42%) and tiller production (25%) for rice receiving foliar Si, no supporting evidence was obtained in these experiments to verify leaf surface Si absorption. The application of Si-rich materials to soil still remains the most effective method for enhancing Si uptake by plants. PMID:28850079

Effect of Different Silicon Sources on Yield and Silicon Uptake of Rice Grown under Varying Phosphorus Rates.

PubMed

Agostinho, Flavia B; Tubana, Brenda S; Martins, Murilo S; Datnoff, Lawrence E

2017-08-29

A series of pot experiments were conducted to: (1) evaluate the effects of different Si sources (soil- and foliar-applied) on grain yield and Si accumulation of rice supplied with varying P rates, and (2) evaluate Si absorption of rice using foliar- and soil-applied Si fertilizers. Three P rates, (0, 112, and 224 kg ha -1 ) combined with five Si treatments (wollastonite and slag applied at 4.5 ton ha -1 and one foliar Si solution applied at 20, 40 and 80 mg Si L -1 ) and a check were arranged in a randomized complete block design with four replications. The presence of P and Si in the soil created a synergistic effect on soil Al, Mn, and As ( P < 0.01), but not on rice growth and P uptake. Wollastonite and slag application were most effective in raising rice Si content than foliar applied Si ( P < 0.001). While there was an improvement in biomass (42%) and tiller production (25%) for rice receiving foliar Si, no supporting evidence was obtained in these experiments to verify leaf surface Si absorption. The application of Si-rich materials to soil still remains the most effective method for enhancing Si uptake by plants.

X-ray absorption spectroscopy to determine originating depth of electrons that form an inelastic background of Auger electron spectrum

NASA Astrophysics Data System (ADS)

Isomura, Noritake; Cui, Yi-Tao; Murai, Takaaki; Oji, Hiroshi; Kimoto, Yasuji

2017-07-01

In Auger electron spectroscopy (AES), the spectral background is mainly due to inelastic scattering of Auger electrons that lose their kinetic energy in a sample bulk. To investigate the spectral components within this background for SiO2(19.3 nm)/Si(100) with known layer thickness, X-ray absorption spectroscopy (XAS) was used in the partial-electron-yield (PEY) mode at several electron kinetic energies to probe the background of the Si KLL Auger peak. The Si K-edge PEY-XAS spectra constituted of both Si and SiO2 components at each kinetic energy, and their component fractions were approximately the same as those derived from the simulated AES background for the same sample structure. The contributions of Auger electrons originating from layers at different depths to the inelastic background could thus be identified experimentally.

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Harsha, Cirandur Sri; Reddy, V. Rajagopal; Lee, Sung-Nam; Won, Jonghan; Choi, Chel-Jong

2018-02-01

Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. The barrier height, ideality factor and series resistance were estimated based on the I-V, Cheung's and Norde's methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained from I-V and C-V measurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

PubMed

Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

2015-02-13

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

The Host Galaxies Of UV-selected AGNs At z 2-3

NASA Astrophysics Data System (ADS)

Hainline, Kevin; Shapley, A.; Greene, J.; Steidel, C.

2012-01-01

An important goal for studies of galaxy formation consists of tracing a direct evolutionary connection between the growth of supermassive black holes powering active galactic nuclei (AGNs) and the build-up of stellar mass in their host galaxies. In the local universe, AGNs are preferentially found in bulge-dominated galaxies, but the AGN demographics at earlier epochs are not as well understood. We present a rest-frame UV composite spectrum for a sample of 33 z 2-3 AGNs drawn from the UV-selected Lyman Break Galaxy (LBG) survey. This spectrum shows many emission and absorption features, such as HI Lyman-alpha, NV 1240, NIV] 1483, 1486, CIV 1548, 1550, HeII 1640, and CIII] 1907, 1909. Redshifted SiIV 1394 absorption provides evidence for outflowing high-ionization gas in these objects at speeds of 103 km/s. Finally, using optical, near-IR, and mid-IR photometry, which cover the rest-frame UV to near-IR portions of the galaxies' spectral energy distributions, we perform stellar population synthesis modeling of the sample. Based on these results, we explore the relationship in the host galaxy between AGN activity, maturity of the stellar population, and regulation of star formation.

The effect of thermal oxidation on the luminescence properties of nanostructured silicon.

PubMed

Liu, Lijia; Sham, Tsun-Kong

2012-08-06

Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

MT2-MMP-dependent release of collagen IV NC1 domains regulates submandibular gland branching morphogenesis

PubMed Central

Rebustini, Ivan T.; Myers, Christopher; Lassiter, Keyonica S.; Surmak, Andrew; Szabova, Ludmila; Holmbeck, Kenn; Pedchenko, Vadim; Hudson, Billy G.; Hoffman, Matthew P.

2009-01-01

Summary Proteolysis is essential during branching morphogenesis, but the roles of MT-MMPs and their proteolytic products are not clearly understood. Here we discover that decreasing MT-MMP activity during submandibular gland branching morphogenesis decreases proliferation and increases collagen IV and MT-MMP expression. Importantly, reducing epithelial MT2-MMP profoundly decreases proliferation and morphogenesis, increases Col4a2 and intracellular accumulation of collagen IV, and decreases the proteolytic release of collagen IV NC1 domains. Importantly, we demonstrate the presence of collagen IV NC1 domains in developing tissue. Furthermore, recombinant collagen IV NC1 domains rescue branching morphogenesis after MT2-siRNA-treatment, increasing MT-MMP and pro-proliferative gene expression via β1 integrin and PI3K-AKT signaling. Additionally, HBEGF also rescues MT2-siRNA-treatment, increasing NC1 domain release, proliferation, and MT2-MMP and Hbegf expression. Our studies provide mechanistic insight into how MT2-MMP-dependent release of bioactive NC1 domains from collagen IV is critical for integrating collagen IV synthesis and proteolysis with epithelial proliferation during branching morphogenesis. PMID:19853562

Effects of substituents in silyl groups on the absorption, fluorescence and structural properties of 1,3,6,8-tetrasilylpyrenes.

PubMed

Maeda, Hajime; Suzuki, Tsubasa; Segi, Masahito

2018-05-09

1,3,6,8-Tetrasilylpyrenes and related germyl and stannyl derivatives were synthesized, and their absorption and fluorescence spectroscopic and structural properties were elucidated. The results show that the UV-vis absorption maxima of these substances in CH2Cl2 solutions shift to longer wavelengths as the size of the alkyl groups and numbers of phenyl groups on silicon increase. Fluorescence quantum yields of tetrasilylpyrenes in cyclohexane are larger than that of pyrene, and a pentamethyldisilyl derivative has an emission efficiency of 0.79. Except in the case of the SiMe2H derivative, excimer emission was not observed in concentrated solutions of these substances. The SiMe2H and SiMe3 derivatives were shown to form CT complexes with tetracyanoethylene in CH2Cl2 solutions. The calculated energy barriers for rotation of the silyl groups about the Si-C bond increase as the steric bulk of the silyl group increases. 29Si NMR chemical shifts were found to depend on the sizes of the alkyl groups and numbers of phenyl groups. Data arising from theoretical calculations suggest that the silyl groups act as electron-donating groups, and the donating ability of the groups decreases in the order SiR3 > GeR3 > SnR3.

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

NASA Astrophysics Data System (ADS)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

A Deep Search for Faint Galaxies Associated with Very Low Redshift C IV Absorbers. III. The Mass- and Environment-dependent Circumgalactic Medium

NASA Astrophysics Data System (ADS)

Burchett, Joseph N.; Tripp, Todd M.; Bordoloi, Rongmon; Werk, Jessica K.; Prochaska, J. Xavier; Tumlinson, Jason; Willmer, C. N. A.; O'Meara, John; Katz, Neal

2016-12-01

Using Hubble Space Telescope Cosmic Origins Spectrograph observations of 89 QSO sightlines through the Sloan Digital Sky Survey footprint, we study the relationships between C IV absorption systems and the properties of nearby galaxies, as well as the large-scale environment. To maintain sensitivity to very faint galaxies, we restrict our sample to 0.0015\\lt z\\lt 0.015, which defines a complete galaxy survey to L≳ 0.01 L\\ast or stellar mass {M}* ≳ {10}8 {M}⊙ . We report two principal findings. First, for galaxies with impact parameter ρ \\lt 1 {r}{vir}, C IV detection strongly depends on the luminosity/stellar mass of the nearby galaxy. C IV is preferentially associated with galaxies with {M}* \\gt {10}9.5 {M}⊙ ; lower-mass galaxies rarely exhibit significant C IV absorption (covering fraction {f}C={9}-6+12 % for 11 galaxies with {M}* \\lt {10}9.5 {M}⊙ ). Second, C IV detection within the {M}* \\gt {10}9.5 {M}⊙ population depends on environment. Using a fixed-aperture environmental density metric for galaxies with ρ < 160 kpc at z\\lt 0.055, we find that {57}-13+12 % (8/14) of galaxies in low-density regions (regions with fewer than seven L\\gt 0.15 L\\ast galaxies within 1.5 Mpc) have affiliated C IV absorption; however, none (0/7) of the galaxies in denser regions show C IV. Similarly, the C IV detection rate is lower for galaxies residing in groups with dark matter halo masses of {M}{halo}\\gt {10}12.5 {M}⊙ . In contrast to C IV, H I is pervasive in the circumgalactic medium without regard to mass or environment. These results indicate that C IV absorbers with {log} N({{C}} {{IV}})≳ 13.5 {{cm}}-2 trace the halos of {M}* \\gt {10}9.5 {M}⊙ galaxies but also reflect larger-scale environmental conditions.

THE ELECTRON DENSITY IN EXPLOSIVE TRANSITION REGION EVENTS OBSERVED BY IRIS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doschek, G. A.; Warren, H. P.; Young, P. R.

We discuss the intensity ratio of the O iv line at 1401.16 Å to the Si iv line at 1402.77 Å in Interface Region Imaging Spectrograph ( IRIS ) spectra. This intensity ratio is important if it can be used to measure high electron densities that cannot be measured using line intensity ratios of two different O iv lines from the multiplet within the IRIS wavelength range. Our discussion is in terms of considerably earlier observations made from the Skylab manned space station and other spectrometers on orbiting spacecraft. The earlier data on the O iv and Si iv ratiomore » and other intersystem line ratios not available to IRIS are complementary to IRIS data. In this paper, we adopt a simple interpretation based on electron density. We adopt a set of assumptions and calculate the electron density as a function of velocity in the Si iv line profiles of two explosive events. At zero velocity the densities are about 2–3 × 10{sup 11} cm{sup -3}, and near 200 km s{sup -1} outflow speed the densities are about 10{sup 12} cm{sup -3}. The densities increase with outflow speed up to about 150 km s{sup -1} after which they level off. Because of the difference in the temperature of formation of the two lines and other possible effects such as non-ionization equilibrium, these density measurements do not have the precision that would be available if there were some additional lines near the formation temperature of O iv.« less

Role of HfO 2/SiO 2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

DOE PAGES

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; ...

2016-07-15

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and anmore » E-field peak and average intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO 2 and SiO 2 materials.« less

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Huang, W.; Dudley, M.

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Enhancement of broadband optical absorption in photovoltaic devices by band-edge effect of photonic crystals.

PubMed

Tanaka, Yoshinori; Kawamoto, Yosuke; Fujita, Masayuki; Noda, Susumu

2013-08-26

We numerically investigate broadband optical absorption enhancement in thin, 400-nm thick microcrystalline silicon (µc-Si) photovoltaic devices by photonic crystals (PCs). We realize absorption enhancement by coupling the light from the free space to the large area resonant modes at the photonic band-edge induced by the photonic crystals. We show that multiple photonic band-edge modes can be produced by higher order modes in the vertical direction of the Si photovoltaic layer, which can enhance the absorption on multiple wavelengths. Moreover, we reveal that the photonic superlattice structure can produce more photonic band-edge modes that lead to further optical absorption. The absorption average in wavelengths of 500-1000 nm weighted to the solar spectrum (AM 1.5) increases almost twice: from 33% without photonic crystal to 58% with a 4 × 4 period superlattice photonic crystal; our result outperforms the Lambertian textured structure.

Tunable absorption enhancement in electric split-ring resonators-shaped graphene arrays

NASA Astrophysics Data System (ADS)

Liu, Lin; Chen, Jiajia; Zhou, Zigang; Yi, Zao; Ye, Xin

2018-04-01

In this paper, we propose a wavelength-tunable absorber consisting of electric split-ring resonators (eSRRs)-shaped graphene arrays deposited on a SiO2/Si substrate in the far-infrared and terahertz regions. The simulation results exhibit that two resonance modes are supported by the structure. In terms of the resonance at longer wavelength, the light absorption declines while the period a or length L increases. However, absorption contrarily improves with enlargement of incident angle under the transverse magnetic (TM) polarization. And in terms of resonance at shorter wavelengths, absorption enhances with increasing length L and incident angle θ. Generally, the light absorption enhances with Fermi level E F of graphene, accompanied by blue shift. The aforementioned results unquestionably provide a distinctive source of inspiration for how to design and manufacture devices related to absorption such as filters, spatial light modulator and sensors.

Hot Gas Lines in T Tauri Stars

NASA Astrophysics Data System (ADS)

Ardila, David R.; Herczeg, Gregory J.; Gregory, Scott G.; Ingleby, Laura; France, Kevin; Brown, Alexander; Edwards, Suzan; Johns-Krull, Christopher; Linsky, Jeffrey L.; Yang, Hao; Valenti, Jeff A.; Abgrall, Hervé; Alexander, Richard D.; Bergin, Edwin; Bethell, Thomas; Brown, Joanna M.; Calvet, Nuria; Espaillat, Catherine; Hillenbrand, Lynne A.; Hussain, Gaitee; Roueff, Evelyne; Schindhelm, Eric R.; Walter, Frederick M.

2013-07-01

For Classical T Tauri Stars (CTTSs), the resonance doublets of N V, Si IV, and C IV, as well as the He II 1640 Å line, trace hot gas flows and act as diagnostics of the accretion process. In this paper we assemble a large high-resolution, high-sensitivity data set of these lines in CTTSs and Weak T Tauri Stars (WTTSs). The sample comprises 35 stars: 1 Herbig Ae star, 28 CTTSs, and 6 WTTSs. We find that the C IV, Si IV, and N V lines in CTTSs all have similar shapes. We decompose the C IV and He II lines into broad and narrow Gaussian components (BC and NC). The most common (50%) C IV line morphology in CTTSs is that of a low-velocity NC together with a redshifted BC. For CTTSs, a strong BC is the result of the accretion process. The contribution fraction of the NC to the C IV line flux in CTTSs increases with accretion rate, from ~20% to up to ~80%. The velocity centroids of the BCs and NCs are such that V BC >~ 4 V NC, consistent with the predictions of the accretion shock model, in at most 12 out of 22 CTTSs. We do not find evidence of the post-shock becoming buried in the stellar photosphere due to the pressure of the accretion flow. The He II CTTSs lines are generally symmetric and narrow, with FWHM and redshifts comparable to those of WTTSs. They are less redshifted than the CTTSs C IV lines, by ~10 km s-1. The amount of flux in the BC of the He II line is small compared to that of the C IV line, and we show that this is consistent with models of the pre-shock column emission. Overall, the observations are consistent with the presence of multiple accretion columns with different densities or with accretion models that predict a slow-moving, low-density region in the periphery of the accretion column. For HN Tau A and RW Aur A, most of the C IV line is blueshifted suggesting that the C IV emission is produced by shocks within outflow jets. In our sample, the Herbig Ae star DX Cha is the only object for which we find a P-Cygni profile in the C IV line, which argues for the presence of a hot (105 K) wind. For the overall sample, the Si IV and N V line luminosities are correlated with the C IV line luminosities, although the relationship between Si IV and C IV shows large scatter about a linear relationship and suggests that TW Hya, V4046 Sgr, AA Tau, DF Tau, GM Aur, and V1190 Sco are silicon-poor, while CV Cha, DX Cha, RU Lup, and RW Aur may be silicon-rich.

Flow injection for the determination of Se(IV) and Se(VI) by hydride generation atomic absorption spectrometry with microwave oven on-line prereduction of Se(VI) to Se(IV)

NASA Astrophysics Data System (ADS)

Burguera, J. L.; Carrero, P.; Burguera, M.; Rondon, C.; Brunetto, M. R.; Gallignani, M.

1996-12-01

An on-line flow injection system has been developed for the selective determination of Se(IV) and Se(VI) in citric fruit juices and geothermal waters by hydride generation atomic absorption spectrometry with microwave-aided heating prereduction of Se(VI) to Se(IV). The samples and the prereductant solutions (4 mol l -1 HCl for Se(IV) and 12 mol l -1 HCl for Se(VI)) which circulated in a closed-flow circuit were injected by means of a time-based injector. This mixture was displaced by a carrier solution of 1% v/v of hydrochloric acid through a PTFE coil located inside the focused microwave oven and mixed downstream with a borohydride solution to generate the hydride. The linear ranges were 0-120 and 0-100 μg l -1 of Se(IV) and Se(VI), respectively. The detection limits were 1.0 μg l -1 for Se(IV) and 1.5 μg l -1 for Se(VI). The precision (about 2.0-2.5% RSD) and recoveries (96-98% for Se(IV) and 94-98% for Se(VI)) were good. Total selenium values were also obtained by electrothermal atomic absorption spectrometry which agreed with the content of both selenium species. The sample throughput was about 50 measurements per hour. The main advantage of the method is that the selective determination of Se(IV) and Se(VI) in citric fruit juices and geothermal waters is performed in a closed system with a minimum sample manipulation, exposure to the environment, minimum sample waste and operator attention.

Vibrational spectra and structures of neutral Si(m)C(n) clusters (m + n = 6): sequential doping of silicon clusters with carbon atoms.

PubMed

Savoca, Marco; Lagutschenkov, Anita; Langer, Judith; Harding, Dan J; Fielicke, André; Dopfer, Otto

2013-02-14

Vibrational spectra of mixed silicon carbide clusters Si(m)C(n) with m + n = 6 in the gas phase are obtained by resonant infrared-vacuum-ultraviolet two-color ionization (IR-UV2CI for n ≤ 2) and density functional theory (DFT) calculations. Si(m)C(n) clusters are produced in a laser vaporization source, in which the silicon plasma reacts with methane. Subsequently, they are irradiated with tunable IR light from an IR free electron laser before they are ionized with UV photons from an F(2) laser. Resonant absorption of one or more IR photons leads to an enhanced ionization efficiency for Si(m)C(n) and provides the size-specific IR spectra. IR spectra measured for Si(6), Si(5)C, and Si(4)C(2) are assigned to their most stable isomers by comparison with calculated linear absorption spectra. The preferred Si(m)C(n) structures with m + n = 6 illustrate the systematic transition from chain-like geometries for bare C(6) to three-dimensional structures for bare Si(6). In contrast to bulk SiC, carbon atom segregation is observed already for the smallest n (n = 2).

Optical study of Tm-doped solid solution (Sc0.5Y0.5)2SiO5 crystal

NASA Astrophysics Data System (ADS)

Shi, Jiaojiao; Liu, Bin; Zheng, Lihe; Wang, Qingguo; Tang, Huili; Liu, Junfang; Su, Liangbi; Wu, Feng; Zhao, Hengyu; He, Nuotian; Li, Na; Li, Qiu; Guo, Chao; Xu, Jun; Yang, Kejian; Xu, Xiaodong; Ryba-Romanowski, Witold; Lisiecki, Radosław; Solarz, Piotr

2018-04-01

Tm-doped (Sc0.5Y0.5)2SiO5 (SYSO) crystals were grown by Czochralski method. The UV-VIR-NIR absorption spectra and the near-infrared emission spectra were measured and analysed by the Judd-Ofelt approach. Temperature influence on both absorption and emission spectra has been determined from the data recorded at room temperature and 10 K. It has been found that the structural disorder resulting from dissimilar ionic radii of Sc3+ and Y3+ in the solid solution (Sc0.5Y0.5)2SiO5 crystal brings about a strong inhomogeneous broadening of Tm3+ ions spectra. However, it affects the excited state relaxation dynamics inherent to thulium-doped Y2SiO5 and Sc2SiO5 hosts weakly.

SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

NASA Astrophysics Data System (ADS)

Haiping, Shang; Qiuxia, Xu

2010-05-01

By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

NASA Astrophysics Data System (ADS)

Guichard, Alex Richard

Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores. Investigation of the non-radiative Auger recombination (AR) process suggests that for high carrier densities in excess of 1019 cm-3, the AR lifetime is about 80 ns and decreases with increasing carrier density. This SiNW AR lifetime is slower than the AR process in Si nanocrystals at similar carrier densities, but faster than the radiative process. I also study the light emission and absorption properties of single SiNWs patterned on Silicon-on-insulator (SOI) substrates and find that a large fraction of NWs is optically dead. Moreover, the active, light-emitting nanostructures exhibit PL blinking, a mechanism often seen for individual nanostructure light emitters. These results are essential to evaluating Si nanostructures as a feasible gain or lasing medium. A second potential application for SiNWs is as a building block for low-cost, Si-based photovoltaics (PV). The market for thin-film PV, particularly organic thin-film PV, exists because it offers potential lower cost solutions for solar power versus bulk Si-based PV. However, many thin film technologies, while possessing superior optical absorption properties compared to Si, suffer from poor electronic transport properties. Here, I present a new Si-based PV design that combines the desirable optical properties of highly absorptive organic molecules and the high-mobility electronic properties of crystalline Si. This synergy is achieved by exploiting efficient Forster energy transfer from the light absorbing organic to SiNWs that enable current extraction. The energy transfer radius of a particular dye and bulk Si is found to be roughly 4 nm. Spectroscopic photocurrent experiments were performed on unpatterned SOI wafers as well as SiNWs patterned in SOI substrates and a significant photocurrent increase was seen in samples coated with organics versus uncoated samples. The photocurrent increase is seen in the wavelength range of the dye's absorption band, suggesting absorption of the dye and subsequent energy transfer to the Si plays a role. These results could pave the way for new low-cost, Si-based solar cell designs that leverage the strengths of the Si PV and microelectronics industries.

RECOMBINATION PROCESSES AND NATURE OF THE TAIL AND GAP STATES IN a-Si:H and a-Si:H/a-SiNx:H MULTILAYERS

NASA Astrophysics Data System (ADS)

Morigaki, K.

We discuss recombination processes and nature of the tail and gap states in a-Si:H and a-Si:H/a-SiNx:H multilayers on the basis of our ODMR, luminescence, photoinduced absorption and ENDOR measurements. We present other results relevant to this subject and attempt to interpret them in terms of our model.

Preparation of SiO2@Ag Composite Nanoparticles and Their Antimicrobial Activity.

PubMed

Qin, Rui; Li, Guian; Pan, Liping; Han, Qingyan; Sun, Yan; He, Qiao

2017-04-01

At normal atmospheric temperature, the modified sol–gel method was employed to synthesize SiO2 nanospheres (SiO2 NSs) whose average size was about 352 nm. Silver nanoparticles (Ag NPs) were uniformly distributed on the surface of SiO2 nanospheres (SiO2 NSs) by applying chemical reduction method at 95 °C and the size of silver nanoparticles (Ag NPs) could be controlled by simply tuning the reaction time and the concentration of sodium citrate. Besides, the size, morphology, structure and optical absorption properties of SiO2@Ag composite nanoparticles were measured and characterized by laser particle size analyzer (LPSA), transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffraction (XRD) and ultraviolet visible absorption spectrometer (UV-Vis), respectively. Furthermore, antimicrobial effect experiments that against gram-negative bacteria (E. coli) and gram-positive bacteria (S. aureus) were carried out to characterize the antibacterial activity of synthesized SiO2@Ag composite nanoparticles. The results show that the prepared SiO2@Ag composite nanoparticles have strong antimicrobial activity, which is associated with the size of silver nanoparticles.

Equivalent circuit model of Ge/Si separate absorption charge multiplication avalanche photodiode

NASA Astrophysics Data System (ADS)

Wang, Wei; Chen, Ting; Yan, Linshu; Bao, Xiaoyuan; Xu, Yuanyuan; Wang, Guang; Wang, Guanyu; Yuan, Jun; Li, Junfeng

2018-03-01

The equivalent circuit model of Ge/Si Separate Absorption Charge Multiplication Avalanche Photodiode (SACM-APD) is proposed. Starting from the carrier rate equations in different regions of device and considering the influences of non-uniform electric field, noise, parasitic effect and some other factors, the equivalent circuit model of SACM-APD device is established, in which the steady-state and transient current voltage characteristics can be described exactly. In addition, the proposed Ge/Si SACM APD equivalent circuit model is embedded in PSpice simulator. The important characteristics of Ge/Si SACM APD such as dark current, frequency response, shot noise are simulated, the simulation results show that the simulation with the proposed model are in good agreement with the experimental results.

Quantification of absorption, retention and elimination of two different oral doses of vitamin A in Zambian boys using accelerator mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aklamati, E K; Mulenga, M; Dueker, S R

A recent survey indicated that high-dose vitamin A supplements (HD-VAS) had no apparent effect on vitamin A (VA) status of Zambian children <5 y of age. To explore possible reasons for the lack of response to HD-VAS among Zambian children, we quantified the absorption, retention, and urinary elimination of either a single HDVAS (60 mg) or a smaller dose of stable isotope (SI)-labeled VA (5 mg), which was used to estimate VA pool size, in 3-4 y old Zambian boys (n = 4 for each VA dose). A 25 nCi tracer dose of [{sup 14}C{sub 2}]-labeled VA was co-administered withmore » the HD-VAS or SI-labeled VA, and 24-hr stool and urine samples were collected for 3 and 7 consecutive days, respectively, and 24-hr urine samples at 4 later time points. Accelerator Mass Spectrometry (AMS) was used to measure the cumulative excretion of {sup 14}C in stool and urine 3d after dosing to estimate, respectively, absorption and retention of the VAS and SI-labeled VA. The urinary elimination rate (UER) was estimated by plotting {sup 14}C in urine vs. time, and fitting an exponential equation to the data. Estimates of mean absorption, retention and the UER were 83.8 {+-} 7.1%, 76.3 {+-} 6.7%, and 1.9 {+-} 0.6%/d, respectively, for the HD-VAS and 76.5 {+-} 9.5%, 71.1 {+-} 9.4%, and 1.8 {+-} 1.2%/d, respectively for the smaller dose of SI-labeled VA. Estimates of absorption, retention and the UER did not differ by size of the VA dose administered (P=0.26, 0.40, 0.88, respectively). Estimated absorption and retention were negatively associated with reported fever (P=0.011) and malaria (P =0.010). HD-VAS and SI-labeled VA were adequately absorbed, retained and utilized in apparently healthy Zambian preschool-age boys, although absorption and retention may be affected by recent infections.« less

Reactivity of the Donor-Stabilized Silylenes [iPrNC(Ph)NiPr]2 Si and [iPrNC(NiPr2 )NiPr]2 Si: Activation of CO2 and CS2.

PubMed

Mück, Felix M; Baus, Johannes A; Nutz, Marco; Burschka, Christian; Poater, Jordi; Bickelhaupt, F Matthias; Tacke, Reinhold

2015-11-09

Activation of CO2 by the bis(amidinato)silylene 1 and the analogous bis(guanidinato)silylene 2 leads to the structurally analogous six-coordinate silicon(IV) complexes 4 (previous work) and 8, respectively, the first silicon compounds with a chelating carbonato ligand. Likewise, CS2 activation by silylene 1 affords the analogous six-coordinate silicon(IV) complex 10, the first silicon compound with a chelating trithiocarbonato ligand. CS2 activation by silylene 2, however, yields the five-coordinate silicon(IV) complex 13 with a carbon-bound CS2 (2-) ligand, which also represents an unprecedented coordination mode in silicon coordination chemistry. Treatment of the dinuclear silicon(IV) complexes 5 and 6 with CO2 also affords the six-coordinate carbonatosilicon(IV) complexes 4 and 8, respectively. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparative performance evaluation of a new a-Si EPID that exceeds quad high-definition resolution.

PubMed

McConnell, Kristen A; Alexandrian, Ara; Papanikolaou, Niko; Stathakis, Sotiri

2018-01-01

Electronic portal imaging devices (EPIDs) are an integral part of the radiation oncology workflow for treatment setup verification. Several commercial EPID implementations are currently available, each with varying capabilities. To standardize performance evaluation, Task Group Report 58 (TG-58) and TG-142 outline specific image quality metrics to be measured. A LinaTech Image Viewing System (IVS), with the highest commercially available pixel matrix (2688x2688 pixels), was independently evaluated and compared to an Elekta iViewGT (1024x1024 pixels) and a Varian aSi-1000 (1024x768 pixels) using a PTW EPID QC Phantom. The IVS, iViewGT, and aSi-1000 were each used to acquire 20 images of the PTW QC Phantom. The QC phantom was placed on the couch and aligned at isocenter. The images were exported and analyzed using the epidSoft image quality assurance (QA) software. The reported metrics were signal linearity, isotropy of signal linearity, signal-tonoise ratio (SNR), low contrast resolution, and high-contrast resolution. These values were compared between the three EPID solutions. Computed metrics demonstrated comparable results between the EPID solutions with the IVS outperforming the aSi-1000 and iViewGT in the low and high-contrast resolution analysis. The performance of three commercial EPID solutions have been quantified, evaluated, and compared using results from the PTW QC Phantom. The IVS outperformed the other panels in low and high-contrast resolution, but to fully realize the benefits of the IVS, the selection of the monitor on which to view the high-resolution images is important to prevent down sampling and visual of resolution.

NHC→SiCl4 : an ambivalent carbene-transfer reagent.

PubMed

Böttcher, Tobias; Steinhauer, Simon; Lewis-Alleyne, Lesley C; Neumann, Beate; Stammler, Hans-Georg; Bassil, Bassem S; Röschenthaler, Gerd-Volker; Hoge, Berthold

2015-01-07

The addition of BCl3 to the carbene-transfer reagent NHC→SiCl4 (NHC=1,3-dimethylimidazolidin-2-ylidene) gave the tetra- and pentacoordinate trichlorosilicon(IV) cations [(NHC)SiCl3 ](+) and [(NHC)2 SiCl3 ](+) with tetrachloroborate as counterion. This is in contrast to previous reactions, in which NHC→SiCl4 served as a transfer reagent for the NHC ligand. The addition of BF3 ⋅OEt2 , on the other hand, gave NHC→BF3 as the product of NHC transfer. In addition, the highly Lewis acidic bis(pentafluoroethyl)silane (C2 F5 )2 SiCl2 was treated with NHC→SiCl4 . In acetonitrile, the cationic silicon(IV) complexes [(NHC)SiCl3 ](+) and [(NHC)2 SiCl3 ](+) were detected with [(C2 F5 )SiCl3 ](-) as counterion. A similar result was already reported for the reaction of NHC→SiCl4 with (C2 F5 )2 SiH2 , which gave [(NHC)2 SiCl2 H][(C2 F5 )SiCl3 ]. If the reaction medium was changed to dichloromethane, the products of carbene transfer, NHC→Si(C2 F5 )2 Cl2 and NHC→Si(C2 F5 )2 ClH, respectively, were obtained instead. The formation of the latter species is a result of chloride/hydride metathesis. These compounds may serve as valuable precursors for electron-poor silylenes. Furthermore, the reactivity of NHC→SiCl4 towards phosphines is discussed. The carbene complex NHC→PCl3 shows similar reactivity to NHC→SiCl4 , and may even serve as a carbene-transfer reagent as well. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced Broadband Electromagnetic Absorption in Silicon Film with Photonic Crystal Surface and Random Gold Grooves Reflector

PubMed Central

Chen, Zhi-Hui; Qiao, Na; Yang, Yibiao; Ye, Han; Liu, Shaoding; Wang, Wenjie; Wang, Yuncai

2015-01-01

We show a hybrid structure consisting of Si film with photonic crystal surface and random triangular gold grooves reflector at the bottom, which is capable of realizing efficient, broad-band, wide-angle optical absorption. It is numerically demonstrated that the enhanced absorption in a broad wavelength range (0.3–9.9 μm) due to the scattering effect of both sides of the structure and the created resonance modes. Larger thickness and period are favored to enhance the absorption in broader wavelength range. Substantial electric field concentrates in the grooves of surface photonic crystal and in the Si film. Our structure is versatile for solar cells, broadband photodetection and stealth coating. PMID:26238270

Binarity and Accretion in AGB Stars: HST/STIS Observations of UV Flickering in Y Gem

NASA Astrophysics Data System (ADS)

Sahai, R.; Sánchez Contreras, C.; Mangan, A. S.; Sanz-Forcada, J.; Muthumariappan, C.; Claussen, M. J.

2018-06-01

Binarity is believed to dramatically affect the history and geometry of mass loss in AGB and post-AGB stars, but observational evidence of binarity is sorely lacking. As part of a project to search for hot binary companions to cool AGB stars using the GALEX archive, we discovered a late-M star, Y Gem, to be a source of strong and variable UV and X-ray emission. Here we report UV spectroscopic observations of Y Gem obtained with the Hubble Space Telescope that show strong flickering in the UV continuum on timescales of ≲20 s, characteristic of an active accretion disk. Several UV lines with P-Cygni-type profiles from species such as Si IV and C IV are also observed, with emission and absorption features that are red- and blueshifted by velocities of ∼500 {km} {{{s}}}-1 from the systemic velocity. Our model for these (and previous) observations is that material from the primary star is gravitationally captured by a companion, producing a hot accretion disk. The latter powers a fast outflow that produces blueshifted features due to the absorption of UV continuum emitted by the disk, whereas the redshifted emission features arise in heated infalling material from the primary. The outflow velocities support a previous inference by Sahai et al. that Y Gem’s companion is a low-mass main-sequence star. Blackbody fitting of the UV continuum implies an accretion luminosity of about 13 L ⊙, and thus a mass-accretion rate >5 × 10‑7 M ⊙ yr‑1 we infer that Roche-lobe overflow is the most likely binary accretion mode for Y Gem.

Low Z elements (Mg, Al, and Si) K-edge X-ray absorption spectroscopy in minerals and disordered systems

NASA Astrophysics Data System (ADS)

Ildefonse, Ph.; Calas, G.; Flank, A. M.; Lagarde, P.

1995-05-01

Soft X-ray absorption near edge spectroscopy (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy have been performed at the Mg-, Al- and Si-K edges in order to establish the ability of this spectroscopy to derive structural information in disordered solids such as glasses and gels. Mg- and Al-K XANES are good structural probes to determine the coordination state of these elements in important minerals, glasses and gels. In a CaOsbnd MgOsbnd 2SiO2 glass Mg XANES spectra differ from that found in the crystalline equivalent, with a significant shift of the edge maxima to lower energy, consistent with a CN lower than 6. Mg-EXAFS on the same sample are in agreement and indicate the presence of 5-coordinated Mg with Mgsbnd O distances of 2.01Å. In aluminosilicate gels, Alsbnd K XANES has been used to investigate the [4]Al/Altotal ratios. These ratios increase as the Al/Si ratios decrease. Aluminosilicate and ferric-silicate gels were studied by using Sisbnd K edge XANES. XANES spectra differ significantly among the samples studied. Aluminosilicate gels with Al/Si= 1 present a different Al and Si local environment from that known in clay minerals with the same Al/Si ratio. The gel-to-mineral transformation thus implies a dissolution-recrystallization mechanism. On the contrary, ferric-silicate gel presents a Si local environment close to that found in nontronite which may be formed by a long range ordering of the initial gels.

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

PubMed

Lucovsky, Gerald; Zeller, Daniel

2011-09-01

Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x < 2. These films were stable in normal laboratory ambients with no evidence for reaction with atmospheric water. Films deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

NASA Astrophysics Data System (ADS)

Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Suppressed Far-UV Stellar Activity and Low Planetary Mass Loss in the WASP-18 System

NASA Astrophysics Data System (ADS)

Fossati, L.; Koskinen, T.; France, K.; Cubillos, P. E.; Haswell, C. A.; Lanza, A. F.; Pillitteri, I.

2018-03-01

WASP-18 hosts a massive, very close-in Jupiter-like planet. Despite its young age (<1 Gyr), the star presents an anomalously low stellar activity level: the measured {log}{R}HK}{\\prime } activity parameter lies slightly below the basal level; there is no significant time-variability in the {log}{R}HK}{\\prime } value; there is no detection of the star in the X-rays. We present results of far-UV observations of WASP-18 obtained with COS on board of Hubble Space Telescope aimed at explaining this anomaly. From the star’s spectral energy distribution, we infer the extinction (E(B-V) ≈ 0.01 mag) and then the interstellar medium (ISM) column density for a number of ions, concluding that ISM absorption is not the origin of the anomaly. We measure the flux of the four stellar emission features detected in the COS spectrum (C II, C III, C IV, Si IV). Comparing the C II/C IV flux ratio measured for WASP-18 with that derived from spectra of nearby stars with known age, we see that the far-UV spectrum of WASP-18 resembles that of old (>5 Gyr), inactive stars, in stark contrast with its young age. We conclude that WASP-18 has an intrinsically low activity level, possibly caused by star–planet tidal interaction, as suggested by previous studies. Re-scaling the solar irradiance reference spectrum to match the flux of the Si IV line, yields an XUV integrated flux at the planet orbit of 10.2 erg s‑1 cm‑2. We employ the rescaled XUV solar fluxes to models of the planetary upper atmosphere, deriving an extremely low thermal mass-loss rate of 10‑20 M J Gyr‑1. For such high-mass planets, thermal escape is not energy limited, but driven by Jeans escape. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained from MAST at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. These observations are associated with program #13859. Based on observations made with ESO Telescopes at the La Silla Paranal Observatory under programme ID 092.D-0587.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

NASA Astrophysics Data System (ADS)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Ten-gram scale SiC@SiO2 nanowires: high-yield synthesis towards industrialization, in situ growth mechanism and their peculiar photoluminescence and electromagnetic wave absorption properties.

PubMed

Li, Z J; Yu, H Y; Song, G Y; Zhao, J; Zhang, H; Zhang, M; Meng, A L; Li, Q D

2017-02-01

SiC@SiO 2 nanowires, as a functional nanocomposite, have attracted widespread attention due to their fascinating performance and broad application prospect. However, the low-cost, high yield preparation of large-scale SiC@SiO 2 nanowires is still a bottleneck, which hinders their industrial application. Herein, a carbothermal reduction strategy has been developed to synthesize SiC@SiO 2 nanowires, which breaks through the handicap of the traditional growth pattern that uses the aid of a substrate. Systematic characterization results illustrate that the yield of the as-obtained products greatly depends on the heating rate, and ten-gram scale SiC@SiO 2 nanowires (∼27.2 g) composed of a cubic β-SiC core and homogeneous amorphous SiO 2 coating are achieved under the optimum process parameters. The in situ mechanisms of expansion-insertion-growth and inhibition of expansion-package-obstruction are proposed to rationally interpret the growth process of SiC@SiO 2 nanowires and the effect of various heating rates, respectively. Furthermore, the SiC@SiO 2 nanowires display violet-blue photoluminescence and electromagnetic wave absorption properties. This study not only provides some beneficial suggestions for the commercial production of SiC@SiO 2 nanowires, but also reveals promising applications of SiC@SiO 2 nanowires in the optical and electromagnetic shielding fields. Moreover, the developed novel in situ growth mechanism enriches the growth theory of one-dimension nanomaterials and offers inspiration for their industrial-scale production.

Axially substituted silicon(IV) phthalocyanine and its quaternized derivative as photosensitizers towards tumor cells and bacterial pathogens.

PubMed

Ömeroğlu, İpek; Kaya, Esra Nur; Göksel, Meltem; Kussovski, Vesselin; Mantareva, Vanya; Durmuş, Mahmut

2017-10-15

Axially di-(alpha,alpha-diphenyl-4-pyridylmethoxy) silicon(IV) phthalocyanine (3) and its quaternized derivative (3Q) were synthesized and tested as photosensitizers against tumor and bacterial cells. These new phthalocyanines were characterized by elemental analysis, and different spectroscopic methods such as FT-IR, UV-Vis, MALDI-TOF and 1 H NMR. The photophysical properties such as absorption and fluorescence, and the photochemical properties such as singlet oxygen generation of both phthalocyanines were investigated in solutions. The obtained values were compared to the values obtained with unsubstituted silicon(IV) phthalocyanine dichloride (SiPcCl 2 ). The addition of two di-(alpha,alpha-diphenyl-4-pyridylmethanol) groups as axial ligands showed an improvement of the photophysical and photochemical properties and an increasement of the singlet oxygen quantum yield (Φ Δ ) from 0.15 to 0.33 was determined. The photodynamic efficacy of synthesized photosensitizers (3 and 3Q) were evaluated with promising photocytotoxicity (17% cell survival for 3 and 28% for 3Q) against the cervical cancer cell line (HeLa). The photodynamic inactivation of pathogenic bacterial strains Streptococcus mutans, Staphylococcus aureus, and Pseudomonas aeruginosa suggested a high susceptibility with quaternized derivative (3Q). The both Gram-positive bacterial strains were fully photoinactivated with 11μM 3Q and mild light dose 50J.cm -2 . In case of P. aeruginosa the effect was negligible for concentrations up to 22μM 3Q and light dose 100J.cm -2 . The results suggested that the novel axially substituted silicon(IV) phthalocyanines have promising characteristic as photosensitizer towards tumor cells. The quaternized derivative 3Q has high potential for photoinactivation of pathogenic bacterial species. Copyright © 2017 Elsevier Ltd. All rights reserved.

The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO 2/SiO 2 thin-film pairs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristau, Detlev; Papernov, S.; Kozlov, A. A.

2015-11-23

The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and an E-field peak and averagemore » intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO 2 and SiO 2 materials.« less

A Comparison of mucosal surface area and villous histology in small intestines of the Brazilian free-tailed bat (Tadarida brasiliensis) and the mouse (Mus musculus).

PubMed

Zhang, Zhi-Qiang; Brun, Antonio; Price, Edwin R; Cruz-Neto, Ariovaldo P; Karasov, William H; Caviedes-Vidal, Enrique

2015-01-01

Studies on birds have led to the hypothesis that increased intestinal absorption between enterocytes (paracellular) evolved as a compensation for smaller intestinal size in fliers, which was perhaps selected to minimize the mass of digesta carried. This hypothesis predicts that bats will also exhibit relatively reduced intestinal size and high paracellular absorption, compared with nonflying mammals. Published studies on three bat species indicate relatively high paracellular absorption. One mechanism for increasing paracellular absorption per cm2 small intestine (SI) is increased number of tight junctions (TJs) across which paracellular absorption occurs. To our knowledge, we provide the first comparative analysis of enterocyte size and number in flying and nonflying mammals. Intestines of insectivorous bats Tadarida brasiliensis were compared with Mus musculus using hematoxylin and eosin staining method. Bats had shorter and narrower SIs than mice, and after correction for body size difference by normalizing to mass3/4, the bats had 40% less nominal surface area than the mouse, as predicted. Villous enhancement of surface area was 90% greater in the bat than in the mouse, mainly because of longer villi and a greater density of villi in bat intestines. Bat and mouse were similar in enterocyte diameter. Bats exceeded mice by 54.4% in villous area per cm length SI and by 95% in number of enterocytes per cm2 of the nominal surface area of the SI. Therefore, an increased density of TJs per cm2 SI may be a mechanistic explanation that helps to understand the high paracellular absorption observed in bats compared to nonflying mammals. © 2014 Wiley Periodicals, Inc.

Si K EDGE STRUCTURE AND VARIABILITY IN GALACTIC X-RAY BINARIES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulz, Norbert S.; Corrales, Lia; Canizares, Claude R.

2016-08-10

We survey the Si K edge structure in various absorbed Galactic low-mass X-ray binaries (LMXBs) to study states of silicon in the inter- and circum-stellar medium. The bulk of these LMXBs lie toward the Galactic bulge region and all have column densities above 10{sup 22} cm{sup −2}. The observations were performed using the Chandra High Energy Transmission Grating Spectrometer. The Si K edge in all sources appears at an energy value of 1844 ± 0.001 eV. The edge exhibits significant substructure that can be described by a near edge absorption feature at 1849 ± 0.002 eV and a far edgemore » absorption feature at 1865 ± 0.002 eV. Both of these absorption features appear variable with equivalent widths up to several mÅ. We can describe the edge structure using several components: multiple edge functions, near edge absorption excesses from silicates in dust form, signatures from X-ray scattering optical depths, and a variable warm absorber from ionized atomic silicon. The measured optical depths of the edges indicate much higher values than expected from atomic silicon cross sections and interstellar medium abundances, and they appear consistent with predictions from silicate X-ray absorption and scattering. A comparison with models also indicates a preference for larger dust grain sizes. In many cases, we identify Si xiii resonance absorption and determine ionization parameters between log ξ = 1.8 and 2.8 and turbulent velocities between 300 and 1000 km s{sup −1}. This places the warm absorber in close vicinity of the X-ray binaries. In some data, we observe a weak edge at 1.840 keV, potentially from a lesser contribution of neutral atomic silicon.« less

Visible and near IR Si--H vibrational overtones in SiH/sub 4/

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernheim, R.A.; Lampe, F.W.; O'Keefe, J.F.

1984-06-15

Absorption spectra in the 12 000 to 18 000 cm/sup -1/ range have been recorded for gaseous SiH/sub 4/ using intracavity photoacoustic detection with cw dye lasers. The observed transitions correspond to the ..delta..v = 6--9 overtones of the Si--H local mode stretch and show considerable rotational structure.

Visible and near IR Si-H vibrational overtones in SiH/sub 4/

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernheim, R.A.; Lampe, F.W.; O'Keefe, J.F.

1985-01-01

Absorption spectra in the 12,000 to 18,000 cm/sup -1/ range have been recorded for gaseous SiH/sub 4/ using intracavity photoacoustic detection with cw dye lasers. The observed transitions correspond to the ..delta.. nu = 6-9 overtones of the Si-H local mode stretch and show considerable rotational structure.

Optical Absorption Spectra of Hydrogenated Microcrystalline Silicon Films by Resonant Photothermal Bending Spectroscopy

NASA Astrophysics Data System (ADS)

Kunii, Toshie; Yoshida, Norimitsu; Hori, Yasuro; Nonomura, Shuichi

2006-05-01

A resonant photothermal bending spectroscopy (PBS) is demonstrated for the measurement of absorption coefficient spectra in hydrogenated microcrystalline silicon (μc-Si:H) and hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) films. The resonant vibration technique utilized in PBS establishes the sensitivity as α d˜ 5× 10-5 in a vacuum measurement. Appling resonant PBS to μc-Si:H films, a new extra absorption coefficient αex spectrum is observed from 0.6 to 1.2 eV. The αex spectrum has a peak at ˜1.0 eV, and the localized states inducing the αex are located ˜0.35 eV below the conduction band edge of μc-Si:H. A possible explanation for the observed localized state is that an oxidation produces weak bonds at the grain boundaries and/or amorphous silicon tissues. In μc-3C-SiC:H film, an optical band-gap energy of ˜2.2 eV was demonstrated assuming an indirect optical transition. The temperature coefficient of the optical band-gap energy was ˜2.3× 10-4 eV K-1. The αex spectrum of μc-3C-SiC:H film is plateau-shaped and its magnitude is in accord with an increase in grain size.

Electrical analysis of c-Si/CGSe monolithic tandem solar cells by using a cell-selective light absorption scheme.

PubMed

Jeong, Ah Reum; Choi, Sung Bin; Kim, Won Mok; Park, Jong-Keuk; Choi, Jihye; Kim, Inho; Jeong, Jeung-Hyun

2017-11-16

A monolithic tandem solar cell consisting of crystalline Si (c-Si)/indium tin oxide (ITO)/CuGaSe 2 (CGSe) was demonstrated by stacking a CGSe solar cell on a c-Si/ITO solar cell to obtain a photovoltaic conversion efficiency of about 10%. Electrical analyses based on cell-selective light absorption were applied to individually characterize the photovoltaic performances of the top and bottom subcells. Illumination at a frequency that could be absorbed only by a targeted top or bottom subcell permitted measurement of the open-circuit voltage of the target subcell and the shunt resistance of the non-target subcell. The cell parameters measured from each subcell were very similar to those of the corresponding single cell, confirming the validity of the suggested method. In addition, separating the light absorption intensities at the top and bottom subcells made us measure the bias-dependent photocurrent for each subcell. The series resistance of a c-Si/ITO/CGSe cell subjected to bottom-cell limiting conditions was slightly large, implying that the tunnel junction was a little resistive or slightly beyond ohmic. This analysis demonstrated that aside from producing a slightly resistive tunnel junction, our fabrication processes were successful in monolithically integrating a CGSe cell onto a c-Si/ITO cell without degrading the performances of both cells.

Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Winata, Toto, E-mail: toto@fi.itb.ac.id

2016-04-19

Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which relatedmore » with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.« less

A two-step process for epigenetic inheritance in Arabidopsis

PubMed Central

Blevins, Todd; Pontvianne, Frédéric; Cocklin, Ross; Podicheti, Ram; Chandrasekhara, Chinmayi; Yerneni, Satwica; Braun, Chris; Lee, Brandon; Rusch, Doug; Mockaitis, Keithanne; Tang, Haixu; Pikaard, Craig S.

2014-01-01

Summary In Arabidopsis, multisubunit RNA polymerases IV and V orchestrate RNA-directed DNA methylation (RdDM) and transcriptional silencing, but what identifies the loci to be silenced is unclear. We show that heritable silent locus identity at a specific subset of RdDM targets requires HISTONE DEACETYLASE 6 (HDA6) acting upstream of Pol IV recruitment and siRNA biogenesis. At these loci, epigenetic memory conferring silent locus identity is erased in hda6 mutants such that restoration of HDA6 activity cannot restore siRNA biogenesis or silencing. Silent locus identity is similarly lost in mutants for the cytosine maintenance methyltransferase, MET1. By contrast, pol IV or pol V mutants disrupt silencing without erasing silent locus identity, allowing restoration of Pol IV or Pol V function to restore silencing. Collectively, these observations indicate that silent locus specification and silencing are separable steps that together account for epigenetic inheritance of the silenced state. PMID:24657166

Near-infrared and optical spectroscopy of FSC 10214+4724

NASA Technical Reports Server (NTRS)

Soifer, B. T.; Cohen, J. G.; Armus, L.; Matthews, K.; Neugebauer, G.; Oke, J. B.

1995-01-01

New infrared and optical spectroscopic observations, obtained with the W. M. Keck Telescope, are reported for the highly luminous infrared source FSC 10214+4724. The rest frame optical spectrum shows new emission lines of (Ne III), (Ne V), (O I), (O II), (S II), and He(+), while the rest frame ultraviolet spectrum shows new lines of O IV) + Si IV, N III, N IV), Si II, Ne IV, and possibly N II and (Ne III), as well as clearly showing that Ly-alpha is self-absorbed. The emission-line spectrum is most characteristic of a Seyfert 2 nucleus. The preponderance of spectroscopic evidence strengthens the case for a dust-enshrouded Active galactic nuclei (AGN) powering much or most of the observed luminosity. The various spectral lines lead to a wide range in the inferred reddening and ionization parameter for this system, suggesting that we are viewing several environments through differing extinctions.

Origin of microplasma instabilities during DC operation of silicon based microhollow cathode devices

NASA Astrophysics Data System (ADS)

Felix, Valentin; Lefaucheux, Philippe; Aubry, Olivier; Golda, Judith; Schulz-von der Gathen, Volker; Overzet, Lawrence J.; Dussart, Rémi

2016-04-01

The failure mechanisms of micro hollow cathode discharges (MHCD) in silicon have been investigated using their I-V characteristics, high speed photography and scanning electron microscopy. Experiments were carried out in helium. We observed I-V instabilities in the form of rapid voltage decreases associated with current spikes. The current spikes can reach values more than 100 times greater than the average MHCD current. (The peaks can be more than 1 Ampere for a few 10’s of nanoseconds.) These current spikes are correlated in time with 3-10 μm diameter optical flashes that occur inside the cavities. The SEM characterizations indicated that blister-like structures form on the Si surface during plasma operation. Thin Si layers detach from the surface in localized regions. We theorize that shallow helium implantation occurs and forms the ‘blisters’ whenever the Si is biased as the cathode. These blisters ‘explode’ when the helium pressure inside them becomes too large leading to the transient micro-arcs seen in both the optical emission and the I-V characteristics. We noted that blisters were never found on the metal counter electrode, even when it was biased as the cathode (and the Si as the anode). This observation led to a few suggestions for delaying the failure of Si MHCDs. One may coat the Si cathode (cavities) with blister resistant material; design the MHCD array to operate with the Si as the anode rather than as the cathode; or use a gas additive to prevent surface damage. Regarding the latter, tests using SF6 as the gas additive successfully prevented blister formation through rapid etching. The result was an enhanced MHCD lifetime.

A coating of silane modified silica nanoparticles on PET substrate film for inkjet printing

NASA Astrophysics Data System (ADS)

Wu, J.; Liu, L.; Jiang, B.; Hu, Z.; Wang, X. Q.; Huang, Y. D.; Lin, D. R.; Zhang, Q. H.

2012-04-01

The paper aims to design nanoporous coatings for inkjet printing and study its microstructure influence on the ink absorption. In the present work, two inkjet materials were prepared: one with unmodified nano-SiO2 (S_1), the other with silica coupling agent modified nano-SiO2 (S_2). The surface characteristic changing after modification was investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM). Wetting with contact angles was determined by the dynamic contact angle analysis test (DCAT). Through measurements, the dispersion of modified nano-SiO2 particles in the coating was superior to the dispersion of unmodified nano-SiO2 particles, surface roughness value (Ra) of S_1 was significantly higher than that of S_2, dynamic contact angle of S_2 is smaller than that of S_1 and ink droplet absorption in S_2 was much faster than in S_1. These results also reveal that the modification method is effective and offers a potential way to fabricate inkjet material with the advantages of microstructure and ink absorption over traditional methods.

Adsorption and photodecomposition of Mo(CO)[sub 6] on Si(111) 7[times]7: An infrared reflection absorption spectroscopy study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richter, L.J.; Buntin, S.A.; Chu, P.M.

1994-02-15

The adsorption and photodecomposition of Mo(CO)[sub 6] adsorbed on Si(111) 7[times]7 surfaces has been studied with Auger electron spectroscopy, temperature programmed desorption, low energy electron diffraction and infrared reflection absorption spectroscopy in a single external reflection configuration. The external-reflection technique is demonstrated to have adequate sensitivity to characterize submonolayer coverages of photogenerated Mo(CO)[sub [ital x

[Infrared spectroscopy and XRD studies of coral fossils].

PubMed

Chen, Quan-li; Zhou, Guan-min; Yin, Zuo-wei

2012-08-01

Coral fossil is an old remain of multicellular animal on the earth, and formed by various geological processes. The structural characteristics and compositions of the coral fossils with different color and radial texture on the surface were studied by infrared absorption spectroscopy and X-ray powder diffraction analyses. The results show that the studied coral fossils mainly are composed of SiO2, and the radial microstructure characterized by the calcareous coral cross-section is preserved. It is formed by metasomatism by SiO2. The infrared absorption spectra of the coral fossil with different color and texture are essentially the same, showing typical infrared absorption spectra of the quartz jade. XRD analysis shows that the main components of the coral fossils with different color and texture are consistent and mainly composed of SiO2 with a trace amount of other minerals and without CaCO3.

Transient absorption phenomena and related structural transformations in femtosecond laser-excited Si

NASA Astrophysics Data System (ADS)

Kudryashov, Sergey I.

2004-09-01

Analysis of processes affecting transient optical absorption and photogeneration of electron-hole plasma in silicon pumped by an intense NIR or visible femtosecond laser pulse has been performed taking into account the most important electron-photon, electron-electron and electron-phonon interactions and, as a result, two main regimes of such laser-matter interaction have been revealed. The first regime is concerned with indirect interband optical absorption in Si, enhanced by a coherent shrinkage of its smallest indirect bandgap due to dynamic Franz-Keldysh effect (DFKE). The second regime takes place due to the critical renormalization of the Si direct bandgap along Λ-axis of its first Brillouin zone because of DFKE and the deformation potential electron-phonon interaction and occurs as intense direct single-photon excitation of electrons into one of the quadruplet of equivalent Λ-valleys in the lowest conduction band, which is split down due to the electron-phonon interaction.

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

NASA Astrophysics Data System (ADS)

Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

2015-03-01

GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

Mesoscale modeling of photoelectrochemical devices: light absorption and carrier collection in monolithic, tandem, Si|WO3 microwires.

PubMed

Fountaine, Katherine T; Atwater, Harry A

2014-10-20

We analyze mesoscale light absorption and carrier collection in a tandem junction photoelectrochemical device using electromagnetic simulations. The tandem device consists of silicon (E(g,Si) = 1.1 eV) and tungsten oxide (E(g,WO3) = 2.6 eV) as photocathode and photoanode materials, respectively. Specifically, we investigated Si microwires with lengths of 100 µm, and diameters of 2 µm, with a 7 µm pitch, covered vertically with 50 µm of WO3 with a thickness of 1 µm. Many geometrical variants of this prototypical tandem device were explored. For conditions of illumination with the AM 1.5G spectra, the nominal design resulted in a short circuit current density, J(SC), of 1 mA/cm(2), which is limited by the WO3 absorption. Geometrical optimization of photoanode and photocathode shape and contact material selection, enabled a three-fold increase in short circuit current density relative to the initial design via enhanced WO3 light absorption. These findings validate the usefulness of a mesoscale analysis for ascertaining optimum optoelectronic performance in photoelectrochemical devices.

Electromagnetic Spectrum Analysis and Its Influence on the Photoelectric Conversion Efficiency of Solar Cells.

PubMed

Hu, Kexiang; Ding, Enjie; Wangyang, Peihua; Wang, Qingkang

2016-06-01

The electromagnetic spectrum and the photoelectric conversion efficiency of the silicon hexagonal nanoconical hole (SiHNH) arrays based solar cells is systematically analyzed according to Rigorous Coupled Wave Analysis (RCWA) and Modal Transmission Line (MTL) theory. An ultimate efficiency of the optimized SiHNH arrays based solar cell is up to 31.92% in consideration of the absorption spectrum, 4.52% higher than that of silicon hexagonal nanoconical frustum (SiHNF) arrays. The absorption enhancement of the SiHNH arrays is due to its lower reflectance and more supported guided-mode resonances, and the enhanced ultimate efficiency is insensitive to bottom diameter (D(bot)) of nanoconical hole and the incident angle. The result provides an additional guideline for the nanostructure surface texturing fabrication design for photovoltaic applications.

Fe II fluorescence and anomalous C IV doublet intensities in symbiotic novae

NASA Technical Reports Server (NTRS)

Michalitsianos, A. G.; Kafatos, M.; Meier, S. R.

1992-01-01

The variation of absolute intensities of Bowen-excited Fe II emission in the symbiotic stars RR Tel, RX Pup, and AG Peg is examined. The C IV doublet intensity ratios in RR Tel were not anomalous between 1979 and 1989, and the ratio had typical values within the optically thin range. The intensity of individual Fe II Bowen-excited lines is correlated with the C IV 1548.2 A flux, suggesting the presence of a foreground Fe II region in which fluorescent-excited material responds to flux variations of C IV 1548.2 A. In RX Pup the combined fluxes of Fe II Bowen-pumped lines can account for an appreciable fraction of the flux deficit in the C IV 1548.2 A line when the C IV doublet ratio is less than the optically thick limit of unity. The Fe II Bowen lines in RX Pup exhibit a velocity range from 0 to 80 km/s, where several strong Fe II emission lines correspond to deep absorption structure in the C IV 1548.2 A line profile. In AG Peg and C IV 1548.2 A flux deficit cannot be explained by Fe II fluorescent absorption alone when the C IV doublet ratio anomaly is at an extreme.

Photospheric, circumstellar, and interstellar features of HE, C, N. O, and Si in the HST spectra of four hot white dwarf stars

NASA Technical Reports Server (NTRS)

Shipman, Harry L.; Provencal, Judi; Roby, Scott W.; Barstow, Martin; Bond, Howard; Bruhweiler, Fred; Finley, David; Fontaine, Gilles; Holberg, Jay; Nousek, John

1995-01-01

This paper reports on the observations of four hot white dwarf stars with the spectrographs on the Hubble Space Telescope (HST). The higher resolving power and higher signal/noise, in comparison with IUE, reveals a very rich phenomomenology, including photospheric features from heavy elements, circumstellar features, and the first direct detection of accretion onto the white dwarf component of a binary system. Specific results include the following: Our observations of the ultrahot degenerate H1504+65 confirm that it has a photosphere which is depleted in both H and He, and reveals features of C IV and O VI. The spectrum fits previously published models extremely well. The intermediate-temperature DO star PG 1034+001 has an ultraviolet spectrum showing complex profiles of the well-known resonance doublets of C IV, N v, and Si IV. The O V 1371 line shows a clear separation into a photospheric and a circumstellar component, and it is likely that the same two components can explain the other lines as well. The cooler DA star GD 394 has an extensive system of heavy-element features, but their radial velocity is such that it is highly unlikely that they are formed in the stellar photosphere. Time-resolved spectra of the accreting white dwarf in the V 471 Tau binary system are briefly presented here; they do show the presence of C IV, Si IV, and He II. However, the C IV and He II lines are in emission, rather than in aborption as had been expected.

Determination of doping effects on Si and GaAs bulk samples properties by photothermal investigations

NASA Astrophysics Data System (ADS)

Abroug, Sameh; Saadallah, Faycel; Yacoubi, Noureddine

2007-11-01

The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of opto-electronic compounds. The purpose of this work is to investigate these effects by mirage effect technique and spectroscopic ellipsometry SE. The near gap optical spectra are obtained from photothermal signal for differently doped Si and GaAs bulk samples. However, the above bandgap absorption is determined from SE. These spectra show that absorption in the near IR increases with dopant density and also the bandgap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon-assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density through a semi-empirical model. We have also used the photothermal signal phase to measure the influence of doping on thermal diffusivity.

Conjugate of biotin with silicon(IV) phthalocyanine for tumor-targeting photodynamic therapy.

PubMed

Li, Ke; Qiu, Ling; Liu, Qingzhu; Lv, Gaochao; Zhao, Xueyu; Wang, Shanshan; Lin, Jianguo

2017-09-01

In order to improve the efficacy of photodynamic therapy (PDT), biotin was axially conjugated with silicon(IV) phthalocyanine (SiPc) skeleton to develop a new tumor-targeting photosensitizer SiPc-biotin. The target compound SiPc-biotin showed much higher binding affinity toward BR-positive (biotin receptor overexpressed) HeLa human cervical carcinoma cells than its precursor SiPc-pip. However, when the biotin receptors of HeLa cells were blocked by free biotin, >50% uptake of SiPc-biotin was suppressed, demonstrating that SiPc-biotin could selectively accumulate in BR-positive cancer cells via the BR-mediated internalization. The confocal fluorescence images further confirmed the target binding ability of SiPc-biotin. As a consequence of specificity of SiPc-biotin toward BR-positive HeLa cells, the photodynamic effect was also largely dependent on the BR expression level of HeLa cells. The photodynamic activities of SiPc-biotin against HeLa cells were dramatically reduced when the biotin receptors were blocked by the free biotin (IC 50 : 0.18μM vs. 0.46μM). It is concluded that SiPc-biotin can selectively damage BR-positive cancer cells under irradiation. Furthermore, the dark toxicity of SiPc-biotin toward human normal liver cell lines LO2 was much lower than that of its precursor SiPc-pip. The targeting photodynamic activity and low dark toxicity suggest that SiPc-biotin is a promising photosensitizer for tumor-targeting photodynamic therapy. Copyright © 2017 Elsevier B.V. All rights reserved.

Physical Parameters of Erupting Luminous Blue Variables: NGC 2363-V1 Caught in the Act

NASA Astrophysics Data System (ADS)

Drissen, Laurent; Crowther, Paul A.; Smith, Linda J.; Robert, Carmelle; Roy, Jean-René; Hillier, D. John

2001-01-01

A quantitative study of the luminous blue variable NGC 2363-V1 in the Magellanic galaxy NGC 2366 (D=3.44 Mpc) is presented, based on ultraviolet and optical Hubble Space Telescope STIS spectroscopy. Contemporary WFPC2 and William Herschel Telescope imaging reveals a modest V-band brightness increase of ~0.2 mag per year between 1996 January-1997 November, reaching V=17.4 mag, corresponding to MV=-10.4 mag. Subsequently, V1 underwent a similar decrease in V-band brightness, together with a UV brightening of 0.35 mag from 1997 November to 1999 November. The optical spectrum of V1 is dominated by H emission lines, with Fe II, He I and Na I also detected. In the ultraviolet, a forest of Fe absorption features and numerous absorption lines typical of mid-B supergiants (such as Si II, Si III, Si IV, C III, C IV) are observed. From a spectral analysis with the non-LTE, line-blanketed code of Hillier & Miller, we derive stellar parameters of T*=11 kK, R*=420 Rsolar, log (L/Lsolar)=6.35 during 1997 November, and T*=13 kK, R*=315 Rsolar, log (L/Lsolar)=6.4 for 1999 July. The wind properties of V1 are also exceptional, with M~=4.4×10-4Msolar yr-1 and v∞~=300 km s-1, allowing for a clumped wind (filling factor=0.3) and assuming H/He~4 by number. The presence of Fe lines in the UV and optical spectrum of V1 permits an estimate of the heavy elemental abundance of NGC 2363 from our spectral synthesis. Although some deficiencies remain, allowance for charge exchange reactions in our calculations supports a SMC-like metallicity, that has previously been determined for NGC 2363 from nebular oxygen diagnostics. Considering a variety of possible progenitor stars, V1 has definitely undergone a giant eruption, with a substantial increase in stellar luminosity, radius, and almost certainly mass-loss rate, such that its stellar radius increased at an average rate of ~4 km s-1 during 1992 October-1995 February. The stellar properties of V1 are compared to other LBVs, including η Car and HD 5980 during its brief eruption in 1994 September, the latter newly analyzed here. The mass-loss rate of the HD 5980 eruptor compares closely with V1, but its bolometric luminosity was a factor ~6 times larger. Based on observations with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by AURA, Inc., under NASA contract NAS 5-26555.

Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

PubMed

Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

2017-08-07

A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

Polarization-independent dual-band terahertz metamaterial absorbers based on gold/parylene-C/silicide structure.

PubMed

Wen, Yongzheng; Ma, Wei; Bailey, Joe; Matmon, Guy; Yu, Xiaomei; Aeppli, Gabriel

2013-07-01

We design, fabricate, and characterize dual-band terahertz (THz) metamaterial absorbers with high absorption based on structures consisting of a cobalt silicide (Co-Si) ground plane, a parylene-C dielectric spacer, and a metal top layer. By combining two periodic metal resonators that couple separately within a single unit cell, a polarization-independent absorber with two distinct absorption peaks was obtained. By varying the thickness of the dielectric layer, we obtain absorptivity of 0.76 at 0.76 THz and 0.97 at 2.30 THz, which indicates the Co-Si ground plane absorbers present good performance.

Near Edge X-Ray Absorption and X-Ray Photoelectron Diffraction Studies of the Structural Environment of Ge-Si Systems

NASA Astrophysics Data System (ADS)

Castrucci, P.; Gunnella, R.; Pinto, N.; Bernardini, R.; de Crescenzi, M.; Sacchi, M.

Near edge X-ray absorption spectroscopy (XAS), X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) are powerful techniques for the qualitative study of the structural and electronic properties of several systems. The recent development of a multiple scattering approach to simulating experimental spectra opened a friendly way to the study of structural environments of solids and surfaces. This article reviews recent X-ray absorption experiments using synchrotron radiation which were performed at Ge L edges and core level electron diffraction measurements obtained using a traditional X-ray source from Ge core levels for ultrathin Ge films deposited on silicon substrates. Thermodynamics and surface reconstruction have been found to play a crucial role in the first stages of Ge growth on Si(001) and Si(111) surfaces. Both techniques show the occurrence of intermixing processes even for room-temperature-grown Ge/Si(001) samples and give a straightforward measurement of the overlayer tetragonal distortion. The effects of Sb as a surfactant on the Ge/Si(001) interface have also been investigated. In this case, evidence of layer-by-layer growth of the fully strained Ge overlayer with a reduced intermixing is obtained when one monolayer of Sb is predeposited on the surface.

Quasars Probing Quasars. VII. The Pinnacle of the Cool Circumgalactic Medium Surrounds Massive z ~ 2 Galaxies

NASA Astrophysics Data System (ADS)

Prochaska, J. Xavier; Lau, Marie Wingyee; Hennawi, Joseph F.

2014-12-01

We survey the incidence and absorption strength of the metal-line transitions C II 1334 and C IV 1548 from the circumgalactic medium (CGM) surrounding z ~ 2 quasars, which act as signposts for massive dark matter halos M halo ≈ 1012.5 M ⊙. On scales of the virial radius (r vir ≈ 160 kpc), we measure a high covering fraction fC = 0.73 ± 0.10 to strong C II 1334 absorption (rest equivalent width W 1334 >= 0.2 Å), implying a massive reservoir of cool (T ~ 104 K) metal enriched gas. We conservatively estimate a metal mass exceeding 108 M ⊙. We propose that these metals trace enrichment of the incipient intragroup/intracluster medium that these halos eventually inhabit. This cool CGM around quasars is the pinnacle among galaxies observed at all epochs, as regards covering the fraction and average equivalent width of H I Lyα and low-ion metal absorption. We argue that the properties of this cool CGM primarily reflect the halo mass, and that other factors such as feedback, star-formation rate, and accretion from the intergalactic medium are secondary. We further estimate that the CGM of massive, z ~ 2 galaxies accounts for the majority of strong Mg II absorption along random quasar sightlines. Last, we detect an excess of strong C IV 1548 absorption (W 1548 >= 0.3 Å) over random incidence to the 1 Mpc physical impact parameter and measure the quasar-C IV cross-correlation function: ξ C \\scriptsize{IV-Q}(r) = (r/r_0)-γ with r0 = 7.5+2.8-1.4 h-1 Mpc and γ = 1.7+0.1-0.2. Consistent with previous work on larger scales, we infer that this highly ionized C IV gas traces massive (1012 M ⊙) halos.

Si Wire-Array Solar Cells

NASA Astrophysics Data System (ADS)

Boettcher, Shannon

2010-03-01

Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

Allophane on Mars: Evidence from IR Spectroscopy and TES Spectral Models

NASA Technical Reports Server (NTRS)

Ming, Douglas W.; Rampe, E. B.; Kraft, M. D.; Sharp. T. G.; Golden, D. C.; Christensen, P. C.

2010-01-01

Allophane is an alteration product of volcanic glass and a clay mineral precursor that is commonly found in basaltic soils on Earth. It is a poorly-crystalline or amorphous, hydrous aluminosilicate with Si/Al ratios ranging from approx.0.5-1 [Wada, 1989]. Analyses of thermal infrared (TIR) spectra of the Martian surface from TES show high-silica phases at mid-to-high latitudes that have been proposed to be primary volcanic glass [Bandfield et al., 2000; Bandfield, 2002; Rogers and Christensen, 2007] or poorly-crystalline secondary silicates such as allophane or aluminous amorphous silica [Kraft et al., 2003; Michalski et al., 2006; Rogers and Christensen, 2007; Kraft, 2009]. Phase modeling of chemical data from the APXS on the Mars Exploration Rover Spirit suggest the presence of allophane in chemically weathered rocks [Ming et al., 2006]. The presence of allophane on Mars has not been previously tested with IR spectroscopy because allophane spectra have not been available. We synthesized allophanes and allophanic gels with a range of Si/Al ratios to measure TIR emission and VNIR reflectance spectra and to test for the presence of allophane in Martian soils. VNIR reflectance spectra of the synthetic allophane samples have broad absorptions near 1.4 m from OH stretching overtones and 1.9 m from a combination of stretching and bending vibrations in H2O. Samples have a broad absorption centered near 2.25 microns, from AlAlOH combination bending and stretching vibrations, that shifts position with Si/Al ratio. Amorphous silica (opaline silica or primary volcanic glass) has been identified in CRISM spectra of southern highland terrains based on the presence of 1.4, 1.9, and broad 2.25 m absorptions [Mustard et al., 2008]; however, these absorptions are also consistent with the presence of allophane. TIR emission spectra of the synthetic allophanes show two spectrally distinct types: Si-rich and Al-rich. Si-rich allophanes have two broad absorptions centered near 1080 and 430 cm-1 from Si(Al)-O stretching and Si(Al)-O bending vibrations, respectively, and Al-rich allophanes have three broad absorptions centered near 950, 540, and 430 cm-1. We used a spectral library commonly used to deconvolve TES spectra and four allophane spectra to model nine spectrally distinct regions on Mars [from Rogers et al., 2007]. Regions previously modeled with high-silica phases contain significant amounts of allophane (>10 vol.%) in our models. Our models of northern Acidalia, the type locality for surface type 2 materials, contain 40 vol.% Si-rich allophane. The presence of allophane in multiple surface regions of Mars indicates a more widespread occurrence of low-temperature aqueous alteration at moderate pH than has been previously recognized. The regional variations in modeled abundances and the types of allophane (Si- vs. Al-rich) suggest regional differences in Mars weathering processes.

NRPD4, a protein related to the RPB4 subunit of RNA polymerase II, is a component of RNA polymerases IV and V and is required for RNA-directed DNA methylation

PubMed Central

He, Xin-Jian; Hsu, Yi-Feng; Pontes, Olga; Zhu, Jianhua; Lu, Jian; Bressan, Ray A.; Pikaard, Craig; Wang, Co-Shine; Zhu, Jian-Kang

2009-01-01

RNA-directed DNA methylation (RdDM) is an RNAi-based mechanism for establishing transcriptional gene silencing in plants. The plant-specific RNA polymerases IV and V are required for the generation of 24-nucleotide (nt) siRNAs and for guiding sequence-specific DNA methylation by the siRNAs, respectively. However, unlike the extensively studied multisubunit Pol II, our current knowledge about Pol IV and Pol V is restricted to only the two largest subunits NRPD1a/NRPD1 and NRPD1b/NRPE1 and the one second-largest subunit NRPD2a. It is unclear whether other subunits may be required for the functioning of Pol IV and Pol V in RdDM. From a genetic screen for second-site suppressors of the DNA demethylase mutant ros1, we identified a new component (referred to as RDM2) as well as seven known components (NRPD1, NRPE1, NRPD2a, AGO4, HEN1, DRD1, and HDA6) of the RdDM pathway. The differential effects of the mutations on two mechanistically distinct transcriptional silencing reporters suggest that RDM2, NRPD1, NRPE1, NRPD2a, HEN1, and DRD1 function only in the siRNA-dependent pathway of transcriptional silencing, whereas HDA6 and AGO4 have roles in both siRNA-dependent and -independent pathways of transcriptional silencing. In the rdm2 mutants, DNA methylation and siRNA accumulation were reduced substantially at loci previously identified as endogenous targets of Pol IV and Pol V, including 5S rDNA, MEA-ISR, AtSN1, AtGP1, and AtMU1. The amino acid sequence of RDM2 is similar to that of RPB4 subunit of Pol II, but we show evidence that RDM2 has diverged significantly from RPB4 and cannot function in Pol II. An association of RDM2 with both NRPD1 and NRPE1 was observed by coimmunoprecipitation and coimmunolocalization assays. Our results show that RDM2/NRPD4/NRPE4 is a new component of the RdDM pathway in Arabidopsis and that it functions as part of Pol IV and Pol V. PMID:19204117

NRPD4, a Protein Related to the RPB4 Subunit of RNA Polymerase II, is a Component of RNA Polymerases IV and V and is Required for RNA-directed DNA methylation

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Xin-Jian; Hsu, Yi-Feng; Pontes, Olga

2009-01-01

RNA-directed DNA methylation (RdDM) is an RNAi-based mechanism for establishing transcriptional gene silencing in plants. The plant-specific RNA polymerases IV and V are required for the generation of 24-nucleotide (nt) siRNAs and for guiding sequence-specific DNA methylation by the siRNAs, respectively. However, unlike the extensively studied multisubunit Pol II, our current knowledge about Pol IV and Pol V is restricted to only the two largest subunits NRPD1a/NRPD1 and NRPD1b/NRPE1 and the one second-largest subunit NRPD2a. It is unclear whether other subunits may be required for the functioning of Pol IV and Pol V in RdDM. From a genetic screen formore » second-site suppressors of the DNA demethylase mutant ros1, we identified a new component (referred to as RDM2) as well as seven known components (NRPD1, NRPE1, NRPD2a, AGO4, HEN1, DRD1, and HDA6) of the RdDM pathway. The differential effects of the mutations on two mechanistically distinct transcriptional silencing reporters suggest that RDM2, NRPD1, NRPE1, NRPD2a, HEN1, and DRD1 function only in the siRNA-dependent pathway of transcriptional silencing, whereas HDA6 and AGO4 have roles in both siRNA-dependent and -independent pathways of transcriptional silencing. In the rdm2 mutants, DNA methylation and siRNA accumulation were reduced substantially at loci previously identified as endogenous targets of Pol IV and Pol V, including 5S rDNA, MEA-ISR, AtSN1, AtGP1, and AtMU1. The amino acid sequence of RDM2 is similar to that of RPB4 subunit of Pol II, but we show evidence that RDM2 has diverged significantly from RPB4 and cannot function in Pol II. An association of RDM2 with both NRPD1 and NRPE1 was observed by coimmunoprecipitation and coimmunolocalization assays. Our results show that RDM2/NRPD4/NRPE4 is a new component of the RdDM pathway in Arabidopsis and that it functions as part of Pol IV and Pol V.« less

Chloro-, methyl-, and (tetrahydroborato)tris((hexamethyldisilyl)amido)thorium(IV) and -uranium(IV). Crystal structure of (tetrahydroborato)tris((hexamethyldisilyl)amido)thorium(IV)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turner, H.W.; Andersen, R.A.; Zalkin, A.

1979-05-01

Reaction of sodium (hexamethyldisilyl)amide with thorium tetrachloride or uranium tetrachloride yields chlorotris-((hexamethyldisilyl)amido)thorium(IV) or -uranium(IV), respectively. The chloroamides of thorium or uranium react with dimethylmagnesium or methyllithium yielding the methyl derivatives MeTh(N(SiMe/sub 3/)/sub 2/)/sub 3/ or MeU(N(SiMe/sub 3/)/sub 2/)/sub 3/, respectively. The chloro compounds yield BH/sub 4/M(N(SiMe/sub 3/)/sub 2/)/sub 3/ upon reaction with lithium tetrahydroborate, where M is thorium or uranium. Infrared spectra of the tetrahydroborate derivatives suggest that BH/sub 4/ is bonded in a tridentate fashion in both compounds, the metal atoms being six-coordinate. Single-crystal X-ray analysis of the thorium borohydride confirms the infrared result. The white BH/sub 4/Th(N(Si(CH/sub 3/))/submore » 2/)/sub 3/ crystals are rhombohedral with cell dimensions a/sub r/ = 11.137 A and ..cap alpha../sub r/ = 113.61/sup 0/; the triply primitive hexagonal cell has a/sub h/ = 18.640 (3) A c/sub h/ = 8.604 (1) A, V = 2489 A/sup 3/, Z = 3, and D/sub x/ = 1.40 g/cm/sup 3/, space group R3m. The structure was refined by full-matrix least squares to a conventional R factor of 0.031 for 1014 data. The Th atom is on a threefold axis 2.32 A from three nitrogen atoms and 2.61 A from the boron atom, a distance which represents a triple bridge bond between Th and B. The three (dimethylsilyl)amide ligands are disordered by a mirror plane parallel to the threefold axis. CH/sub 3/Th(N(Si(CH/sub 3/)/sub 3/)/sub 2/)/sub 3/ is isomorphous with BH/sub 4/Th(N(Si(CH/sub 3/)/sub 3/)/sub 2/)/sub 3/ with cell dimensions a/sub h/ = 18.68 (1) A and c/sub h/ = 8.537 (6) A. The diffraction data yielded integral'' = 12.16 +- 0.33 e for the imaginary scattering term for Th with Cu K..cap alpha.. radiation.« less

Mushroom plasmonic metamaterial infrared absorbers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp; Fujisawa, Daisuke; Hata, Hisatoshi

2015-01-26

There has been a considerable amount of interest in the development of various types of electromagnetic wave absorbers for use in different wavelength ranges. In particular, infrared (IR) absorbers with wavelength selectivity can be applied to advanced uncooled IR sensors, which would be capable of identifying objects through their radiation spectrum. In the present study, mushroom plasmonic metamaterial absorbers (MPMAs) for the IR wavelength region were designed and fabricated. The MPMAs consist of a periodic array of thin metal micropatches connected to a thin metal plate with narrow silicon (Si) posts. A Si post height of 200 nm was achieved bymore » isotropic XeF{sub 2} etching of a thin Si layer sandwiched between metal plates. This fabrication procedure is relatively simple and is consistent with complementary metal oxide semiconductor technology. The absorption spectra of the fabricated MPMAs were experimentally measured. In addition, theoretical calculations of their absorption properties were conducted using rigorous coupled wave analysis. Both the calculated and measured absorbance results demonstrated that these MPMAs can realize strong selective absorption at wavelengths beyond the period of the array by varying the micropatch width. Absorbance values greater than 90% were achieved. Dual- or single-mode absorption can also be selected by varying the width of the Si posts. Pixel structures using such MPMAs could be used as high responsivity, high resolution and fast uncooled IR sensors.« less

Mapping Gas Flows from the Disk to the Circumgalactic Medium

NASA Astrophysics Data System (ADS)

Zheng, Yong

2017-08-01

The feedback efficiency in galaxies remains a crucial component in simulations that is not well constrained by observations. To understand how effectively feedback drives metals into the circumgalactic medium (CGM), we propose to map the metal flows from the disk to the CGM of the nearby dwarf irregular galaxy IC 1613. This will be the first spatial and kinematic map of gas flows from the disk to the halo of a dwarf galaxy. In archival COS spectra of two IC 1613 stars we detect blue-shifted SiII, CII, and SiIV absorption lines, indicative of the existence of multiphase outflows from the disk. We propose to observe two more UV bright stars in IC 1613's disk to assess the covering fraction and strength of the outflow in relation to the galaxy's resolved star formation. We will also observe three QSO sightlines at 0.1, 0.3, and 0.5 Rvir to measure the ionization profile of the gas and the extent of the outflows. We will relate our measurements to the detailed observed star formation history of IC 1613 to directly determine the mass loading factor and feedback efficiency. The proposal will provide critical information on how galaxies evolve and how metals circulate between the disk and the CGM.

Goddard High Resolution Spectrograph Observations of Variability in the RS Canum Venaticorum System V711 Tauri (HR 1099)

NASA Technical Reports Server (NTRS)

Dempsey, Robert C.; Neff, James E.; Thorpe, Marjorie J.; Linsky, Jeffrey L.; Brown, Alexander; Cutispoto, Giuseppe; Rodono, Marcello

1996-01-01

Goddard High Resolution Spectrograph (GHRS) observations of the RS CVn-type binary V711 Tau (Kl IV+G5 IV) were obtained at several phases over two consecutive stellar orbital cycles in order to study ultraviolet emission-line profile and flux variability. Spectra cover the Mg II h and k lines, C IV doublet, and Si IV region, as well as the density-sensitive lines of C III] (1909 A) and Si III] (1892 A). IUE spectra, Extreme Ultra Violet (EUV) data, and Ultraviolet, Blue, Visual (UBV) photometry were obtained contemporaneously with the GHRS data. Variable extended wings were detected in the Mg II lines. We discuss the Mg II line profile variability using various Gaussian emission profile models. No rotational modulation of the line profiles was observed, but there were several large flares. These flares produced enhanced emission in the extended line wings, radial velocity shifts, and asymmetries in some line profiles. Nearly continuous flaring for more than 24 hr, as indicated in the IUE data, represents the most energetic and long-lived chromospheric and transition region flare ever observed with a total energy much greater than 5 x 10(exp 35) ergs. The C III] to Si III] line ratio is used to estimate the plasma density during the flares.

Ultraviolet continuum absorption /less than about 1000 A/ above the quiet sun transition region

NASA Technical Reports Server (NTRS)

Doschek, G. A.; Feldman, U.

1982-01-01

Lyman continuum absorption shortward of 912 A in the quiet sun solar transition region is investigated by combining spectra obtained from the Apollo Telescope Mount experiments on Skylab. The most recent atomic data are used to compute line intensities for lines that fall on both sides of the Lyman limit. Lines of O III, O IV, O V, and S IV are considered. The computed intensity ratios of most lines from O IV, O V, and S IV agree with the experimental ratios to within a factor of 2. However, the discrepancies show no apparent wavelength dependence. From this fact, it is concluded that at least part of the discrepancy between theory and observation for lines of these ions can be accounted for by uncertainties in instrumental calibration and atomic data. However, difficulties remain in reconciling observation and theory, particularly for lines of O III, and one line of S IV. The other recent results of Schmahl and Orrall (1979) are also discussed in terms of newer atomic data.

Bioreduction of U(VI)-Phthalate to a Polymeric U(IV)-Phthalate Colloid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vazquez, G.; Dodge, C; Francis, A

2009-01-01

Phthalic acid, a ubiquitous organic ligand, formed soluble mono- and biligand complexes with a uranyl ion that was then reduced to a U(IV)-phthalate by a Clostridium species under anaerobic conditions. We confirmed the reduction of the hexavalent uranium to the tetravalent oxidation state by UV-vis absorption and X-ray absorption near edge structure spectroscopy. Sequential micro- and ultrafiltration of the solution revealed that the bioreduced uranium was present as a colloid with particles between 0.03 and 0.45 {mu}m. Analysis with extended X-ray absorption fine structure revealed the association of the reduced uranium with the phthalic acid as a repeating biligand 1:2more » U(IV):phthalic acid polymer. This is the first report of the formation of a U(IV) complexed to two phthalic acid molecules in the form of a polymeric colloid. Although it was proposed that the bioreduction and the precipitation of uranium might be an invaluable strategy to immobilize uranium in contaminated environments, our results suggest that the organic ligands present there might hinder the precipitation of the bioreduced uranium under anaerobic conditions and, thereby, enhance its environmental mobility as uranium organic complexes or colloids.« less

Analysis of electrical properties of heterojunction based on ZnIn2Se4

NASA Astrophysics Data System (ADS)

Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

2017-04-01

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Nemeth, William; LaSalvia, Vincenzo

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO 2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm -2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nmmore » thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV oc) values of 730 mV with J o values of 2 fA/cm 2. Samples doped with B 2H 6 gave iV oc values of 690 mV and J o values of 24 fA/cm 2, outperforming BF 3 doping, which gave iV oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.« less

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

NASA Astrophysics Data System (ADS)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

Specific features of the atomic structure of metallic layers of multilayered (CoFeZr/SiO2)32 and (CoFeZr/ a-Si)40 nanostructures with different interlayers

NASA Astrophysics Data System (ADS)

Domashevskaya, E. P.; Guda, A. A.; Chernyshev, A. V.; Sitnikov, V. G.

2017-02-01

Multilayered nanostructures (MN) were prepared by ion-beam successive sputtering from two targets, one of which was a metallic Co45Fe45Zr10 alloy plate and another target was a quartz (SiO2) or silicon plate on the surface of a rotating glass-ceramic substrate in an argon atmosphere. The Co and Fe K edges X-ray absorption fine structure of XANES in the (CoFeZr/SiO2)32 sample with oxide interlayers was similar to XANES of metallic Fe foil. This indicated the existence in metallic layers of multilayered CoFeZr nanocrystals with a local environment similar to the atomic environment in solid solutions on the base of bcc Fe structure, which is also confirmed by XRD data. XANES near the Co and Fe K edges absorption in another multilayered nanostructure with silicon interlayers (CoFeZr/ a-Si)40 differs from XANES of MN with dielectric SiO2 interlayer, which demonstrates a dominant influence of the Fe-Si and Co-Si bonds in the local environment of 3 d Co and Fe metals when they form CoFeSi-type silicide phases in thinner bilayers of this MN.

A dominant mutation in mediator of paramutation2, one of three second-largest subunits of a plant-specific RNA polymerase, disrupts multiple siRNA silencing processes.

PubMed

Sidorenko, Lyudmila; Dorweiler, Jane E; Cigan, A Mark; Arteaga-Vazquez, Mario; Vyas, Meenal; Kermicle, Jerry; Jurcin, Diane; Brzeski, Jan; Cai, Yu; Chandler, Vicki L

2009-11-01

Paramutation involves homologous sequence communication that leads to meiotically heritable transcriptional silencing. We demonstrate that mop2 (mediator of paramutation2), which alters paramutation at multiple loci, encodes a gene similar to Arabidopsis NRPD2/E2, the second-largest subunit of plant-specific RNA polymerases IV and V. In Arabidopsis, Pol-IV and Pol-V play major roles in RNA-mediated silencing and a single second-largest subunit is shared between Pol-IV and Pol-V. Maize encodes three second-largest subunit genes: all three genes potentially encode full length proteins with highly conserved polymerase domains, and each are expressed in multiple overlapping tissues. The isolation of a recessive paramutation mutation in mop2 from a forward genetic screen suggests limited or no functional redundancy of these three genes. Potential alternative Pol-IV/Pol-V-like complexes could provide maize with a greater diversification of RNA-mediated transcriptional silencing machinery relative to Arabidopsis. Mop2-1 disrupts paramutation at multiple loci when heterozygous, whereas previously silenced alleles are only up-regulated when Mop2-1 is homozygous. The dramatic reduction in b1 tandem repeat siRNAs, but no disruption of silencing in Mop2-1 heterozygotes, suggests the major role for tandem repeat siRNAs is not to maintain silencing. Instead, we hypothesize the tandem repeat siRNAs mediate the establishment of the heritable silent state-a process fully disrupted in Mop2-1 heterozygotes. The dominant Mop2-1 mutation, which has a single nucleotide change in a domain highly conserved among all polymerases (E. coli to eukaryotes), disrupts both siRNA biogenesis (Pol-IV-like) and potentially processes downstream (Pol-V-like). These results suggest either the wild-type protein is a subunit in both complexes or the dominant mutant protein disrupts both complexes. Dominant mutations in the same domain in E. coli RNA polymerase suggest a model for Mop2-1 dominance: complexes containing Mop2-1 subunits are non-functional and compete with wild-type complexes.

Catalytic properties of RNA polymerases IV and V: accuracy, nucleotide incorporation and rNTP/dNTP discrimination

PubMed Central

Marasco, Michelle; Li, Weiyi; Lynch, Michael

2017-01-01

Abstract All eukaryotes have three essential nuclear multisubunit RNA polymerases, abbreviated as Pol I, Pol II and Pol III. Plants are remarkable in having two additional multisubunit RNA polymerases, Pol IV and Pol V, which synthesize noncoding RNAs that coordinate RNA-directed DNA methylation for silencing of transposons and a subset of genes. Based on their subunit compositions, Pols IV and V clearly evolved as specialized forms of Pol II, but their catalytic properties remain undefined. Here, we show that Pols IV and V differ from one another, and Pol II, in nucleotide incorporation rate, transcriptional accuracy and the ability to discriminate between ribonucleotides and deoxyribonucleotides. Pol IV transcription is considerably more error-prone than Pols II or V, which may be tolerable in its synthesis of short RNAs that serve as precursors for siRNAs targeting non-identical members of transposon families. By contrast, Pol V exhibits high fidelity transcription, similar to Pol II, suggesting a need for Pol V transcripts to faithfully reflect the DNA sequence of target loci to which siRNA–Argonaute silencing complexes are recruited. PMID:28977461

Design Two-dimensional Materials with Superb Electronic and Optoelectronic Properties: The case of SiS

NASA Astrophysics Data System (ADS)

Wei, Su-Huai; Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X. G.; Yakobson, Boris I.

Two-dimensional (2D) semiconductors have many unique electronic and optoelectronic properties that is suitable for novel device applications. Most of the current study are focused on group IV or transition metal chalcogenides. In this study, using atomic transmutation and global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide that can overcome shortcomings encountered in conventional 2D semiconducttord. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has unique electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer thickness and strain appliance, and good air stability as well. Therefore, Pma2-SiS is expected to be a very promising 2D material in the field of 2D electronics and optoelectronics. Silicene sulfide also shows similar properties. We believe that the designing principles and approaches used to identify these materials have great potential to accelerate future finding of new functional materials within the 2D families.

The Volatility of Far-Ultraviolet Radiation from Low-Mass Stars and Planetary Implications

NASA Astrophysics Data System (ADS)

Loyd, R. O. Parke

A low-mass star emits only 0.001-0.01% of its electromagnetic energy in the ultraviolet (100 - 1700 A), yet the implications for planets are profound. Radiation at the short-wavelength end of this range, the extreme ultraviolet (100 - 912 A), powers planetary atmospheric escape that can be observed through transit spectroscopy in the far ultraviolet (FUV; 912 - 1700 A). In addition, FUV light that penetrates further into a planet's atmosphere photolyzes molecules, driving nonthermal chemistry capable of producing O2 and O3 abiotically. I present results from extensive Hubble Space Telescope (HST) observations of the FUV emission from low-mass stars, focusing on its variability in time. Using all available archival data, I determined an astrophysical noise floor on detectable absorption in the C II, Si III, and Si IV FUV lines due to a transiting evaporating planet. I analyzed such a transit of the evaporating hot-Neptune GJ 436b, finding no detectable absorption in C II or Si III despite a large (>50%) transit in Lyalpha, but placing upper limits that agree with a photochemical-hydrodynamical model of the planetary outflow. These observations of GJ 436 were part of the MUSCLES Treasury Survey, a much larger dataset covering 7 M and 4 K dwarf stars. A time series analysis of all of these data constrained FUV flares on the surveyed M dwarfs, which I augmented with archival data on well-studied flare stars. The analysis confirmed that M dwarf flares are ubiquitous. In relative units, the FUV flares of the "inactive" MUSCLES M dwarfs are equally as energetic and frequent as those of the M dwarf flare stars. Both flare 3 orders of magnitude more frequently than the sun. Indeed, flares possibly (if not probably) dominate the energy budget of FUV emission from M dwarf stars. Highly energetic flares occurring roughly yearly could annihilate most of the ozone from an Earth-like atmosphere. However, the effect is short-lived, unless additional reactions not accounted for or particle events play a dominant role.

Nanocrystalline silicon thin films and grating structures for solar cells

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Sudhakar, Selvakumar; Khonina, Svetlana N.; Skidanov, Roman V.; Porfirevb, Alexey P.; Moissev, Oleg Y.; Kazanskiy, Nikolay L.; Kumar, Sushil

2016-03-01

Enhancement of optical absorption for achieving high efficiencies in thin film silicon solar cells is a challenge task. Herein, we present the use of grating structure for the enhancement of optical absorption. We have made grating structures and same can be integrated in hydrogenated micro/nanocrystalline silicon (μc/nc-Si: H) thin films based p-i-n solar cells. μc/nc-Si: H thin films were grown using plasma enhanced chemical vapor deposition method. Grating structures integrated with μc/nc-Si: H thin film solar cells may enhance the optical path length and reduce the reflection losses and its characteristics can be probed by spectroscopic and microscopic technique with control design and experiment.

Controllable surface-plasmon resonance in engineered nanometer epitaxial silicide particles embedded in silicon

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; Ksendzov, A.; Iannelli, J. M.; George, T.

1991-01-01

Epitaxial CoSi2 particles in a single-crystal silicon matrix are grown by molecular-beam epitaxy using a technique that allows nanometer control over particle size in three dimensions. These composite layers exhibit resonant absorption predicted by effective-medium theory. Selection of the height and diameter of disklike particles through a choice of growth conditions allows tailoring of the depolarization factor and hence of the surface-plasmon resonance energy. Resonant absorption from 0.49 to 1.04 eV (2.5 to 1.2 micron) is demonstrated and shown to agree well with values predicted by the Garnett (1904, 1906) theory using the bulk dielectric constants for CoSi2 and Si.

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

NASA Astrophysics Data System (ADS)

Erdoğan, Erman; Kundakçı, Mutlu

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

The pH-Triggered Triblock Nanocarrier Enabled Highly Efficient siRNA Delivery for Cancer Therapy.

PubMed

Du, Lili; Zhou, Junhui; Meng, Lingwei; Wang, Xiaoxia; Wang, Changrong; Huang, Yuanyu; Zheng, Shuquan; Deng, Liandong; Cao, Huiqing; Liang, Zicai; Dong, Anjie; Cheng, Qiang

2017-01-01

Small interfering RNA (siRNA) therapies have been hampered by lack of delivery systems in the past decades. Nowadays, a few promising vehicles for siRNA delivery have been developed and it is gradually revealed that enhancing siRNA release from endosomes into cytosol is a very important factor for successful delivery. Here, we designed a novel pH-sensitive nanomicelle, PEG-PTTMA-P(GMA-S-DMA) (PTMS), for siRNA delivery. Owing to rapid hydrolysis in acidic environment, PTMS NPs underwent hydrophobic-to-hydrophilic transition in endosomes that enabled combination of proton sponge effect and raised osmotic pressure in endosomes, resulting in vigorous release of siRNAs from endosomes into cytosol. In vitro results demonstrated that PTMS/siRNA complexes exhibited excellent gene silencing effects in several cell lines. Their gene silencing efficiency could reach ~91%, ~87% and ~90% at the N/P ratio of 50/1 in MDA-MB-231, A549 and Hela cells respectively, which were better than that obtained with Lipofectamine 2000. The highly efficient gene silencing was then proven from enhanced siRNA endosomal release, which is mainly attributed to pH-triggered degradation of polymer and acid-accelerated siRNA release. In vivo experiments indicated that NPs/siRNA formulation rapidly accumulated in tumor sites after i.v. injection. Tumor growth was effectively inhibited and ~45% gene knockdown efficacy was determined at the siRRM2 dose of 1mg/kg. Meanwhile, no significant toxicity was observed during the whole treatment. We also found that PTMS/siRNA formulations could lead to significant gene silencing effects in liver (~63%) and skin (~80%) when injected by i.v. and s.c., respectively. This research work gives a rational strategy to optimize siRNA delivery systems for tumor treatments.

Quantum cascade lasers with Y2O3 insulation layer operating at 8.1 µm.

PubMed

Kang, JoonHyun; Yang, Hyun-Duk; Joo, Beom Soo; Park, Joon-Suh; Lee, Song-Ee; Jeong, Shinyoung; Kyhm, Jihoon; Han, Moonsup; Song, Jin Dong; Han, Il Ki

2017-08-07

SiO 2 is a commonly used insulation layer for QCLs but has high absorption peak around 8 to 10 µm. Instead of SiO 2 , we used Y 2 O 3 as an insulation layer for DC-QCL and successfully demonstrated lasing operation at the wavelength around 8.1 µm. We also showed 2D numerical analysis on the absorption coefficient of our DC-QCL structure with various parameters such as insulating materials, waveguide width, and mesa angle.

Damage threshold dependence of optical coatings on substrate materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhouling, W.; Zhenxiu, F.

1996-04-01

Damage threshold dependence on substrate materials was investigated for TiO2, ZrO2, SiO2, MgF2, ZnS, and single and TiO2/SiO2 multilayers. The results show that the damage threshold increases with increasing substrate thermal conductivity for single layers and AR coatings and remains the same for HR coatings. With the help of localized absorption measurement and in-situ damage process analysis, these phenomena were well correlated with local absorption-initiated thermal damage mechanism.

Microwave absorption properties of Ni/(C, silicides) nanocapsules

PubMed Central

2012-01-01

The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the ‘core/shell’ interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon. PMID:22548846

Detection of Ne VIII in an Intervening Multiphase Absorption System Toward 3C 263

NASA Astrophysics Data System (ADS)

Narayanan, Anand; Wakker, Bart P.; Savage, Blair D.

2009-09-01

We report the detection of Ne VIII in an intervening multiphase absorption line system at z = 0.32566 in the Far Ultraviolet Spectroscopic Explorer spectrum of the quasar 3C 263 (zem = 0.646). The Ne VIII λ770 Å detection has a 3.9σ significance. At the same velocity, we also find absorption lines from C IV, O III, O IV, and N IV. The line parameter measurements yield log [N(Ne VIII) cm-2] = 13.98+0.10 -0.13 and b = 49.8 ± 5.5 km s-1. We find that the ionization mechanism in the gas phase giving rise to the Ne VIII absorption is inconsistent with photoionization. The absorber has a multiphase structure, with the intermediate ions produced in cool photoionized gas and the Ne VIII most likely in a warm collisionally ionized medium in the temperature range (0.5-1.0) × 106 K. This is the second ever detection of an intervening Ne VIII absorption system. Its properties resemble the previous Ne VIII absorber reported by Savage and colleagues. Direct observations of H I and O VI are needed to better constrain the physical conditions in the collisionally ionized gas phase of this absorber. Based on observations with the NASA-CNES-CSA Far Ultraviolet Spectroscopic Explorer operated by Johns Hopkins University, supported by NASA contract NAS5-32985.

Luminescence and photoinduced absorption in ytterbium-doped optical fibres

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rybaltovsky, A A; Aleshkina, S S; Likhachev, M E

2011-12-31

Photochemical reactions induced in the glass network of an ytterbium-doped fibre core by IR laser pumping and UV irradiation have been investigated by analysing absorption and luminescence spectra. We have performed comparative studies of the photoinduced absorption and luminescence spectra of fibre preforms differing in core glass composition: Al{sub 2}O{sub 3} : SiO{sub 2}, Al{sub 2}O{sub 3} : Yb{sub 2}O{sub 3} : SiO{sub 2}, and P{sub 2}O{sub 5} : Yb{sub 2}O{sub 3} : SiO{sub 2}. The UV absorption spectra of unirradiated preform core samples show strong bands peaking at 5.1 and 6.5 eV, whose excitation plays a key role inmore » photoinduced colour centre generation in the glass network. 'Direct' UV excitation of the 5.1- and 6.5-eV absorption bands at 244 and 193 nm leads to the reduction of some of the Yb{sup 3+} ions to Yb{sup 2+}. The photodarkening of ytterbium-doped fibres by IR pumping is shown to result from oxygen hole centre generation. A phenomenological model is proposed for the IR-pumping-induced photodarkening of ytterbium-doped fibres. The model predicts that colour centre generation in the core glass network and the associated absorption in the visible range result from a cooperative effect involving simultaneous excitation of a cluster composed of several closely spaced Yb{sup 3+} ions.« less

[Study on the vibrational spectra and XRD characters of Huanglong jade from Longling County, Yunnan Province].

PubMed

Pei, Jing-cheng; Fan, Lu-wei; Xie, Hao

2014-12-01

Based on the conventional test methods, the infrared absorption spectrum, Raman spectrum and X-ray diffraction (XRD) were employed to study the characters of the vibration spectrum and mineral composition of Huanglong jade. The testing results show that Huanglong jade shows typical vibrational spectrum characteristics of quartziferous jade. The main infrared absorption bands at 1162, 1076, 800, 779, 691, 530 and 466 cm(-1) were induced by the asymmetric stretching vibration, symmetrical stretching vibration and bending vibration of Si-O-Si separately. Especially the absorption band near 800 cm(-1) is split, which indicates that Huanglong jade has good crystallinity. In Raman spectrum, the main strong vibration bands at 463 and 355 cm(-1) were attributed to bending vibration of Si-O-Si. XRD test confirmed that Quartz is main mineral composition of Huanglong jade and there is a small amount of hematite in red color samples which induced the red color of Huanglong jade. This is the first report on the infrared, Raman and XRD spectra feature of Huanglong jade. It will provide a scientific basis for the identification, naming and other research for huanglong jade.

Determination of essential elements in beverages, herbal infusions and dietary supplements using a new straightforward sequential approach based on flame atomic absorption spectrometry.

PubMed

Gómez-Nieto, Beatriz; Gismera, Mª Jesús; Sevilla, Mª Teresa; Procopio, Jesús R

2017-03-15

A simple method based on FAAS was developed for the sequential multi-element determination of Cu, Zn, Mn, Mg and Si in beverages and food supplements with successful results. The main absorption lines for Cu, Zn and Si and secondary lines for Mn and Mg were selected to carry out the measurements. The sample introduction was performed using a flow injection system. Using the choice of the absorption line wings, the upper limit of the linear range increased up to 110mgL -1 for Mg, 200mgL -1 for Si and 13mgL -1 for Zn. The determination of the five elements was carried out, in triplicate, without the need of additional sample dilutions and/or re-measurements, using less than 3.5mL of sample to perform the complete analysis. The LODs were 0.008mgL -1 for Cu, 0.017mgL -1 for Zn, 0.011mgL -1 for Mn, 0.16mgL -1 for Si and 0.11mgL -1 for Mg. Copyright © 2016 Elsevier Ltd. All rights reserved.

THEORETICAL EMISSION SPECTRA OF ATMOSPHERES OF HOT ROCKY SUPER-EARTHS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Yuichi; Ikoma, Masahiro; Kawahara, Hajime

Motivated by recent detection of transiting high-density super-Earths, we explore the detectability of hot rocky super-Earths orbiting very close to their host stars. In an environment hot enough for their rocky surfaces to be molten, they would have an atmosphere composed of gas species from the magma oceans. In this study, we investigate the radiative properties of the atmosphere that is in gas/melt equilibrium with the underlying magma ocean. Our equilibrium calculations yield Na, K, Fe, Si, SiO, O, and O{sub 2} as the major atmospheric species. We compile the radiative absorption line data of those species available in the literature andmore » calculate their absorption opacities in the wavelength region of 0.1–100 μm. Using them, we integrate the thermal structure of the atmosphere. Then, we find that thermal inversion occurs in the atmosphere because of the UV absorption by SiO. In addition, we calculate the ratio of the planetary to stellar emission fluxes during secondary eclipse, and we find prominent emission features induced by SiO at 4 μm detectable by Spitzer, and those at 10 and 100 μm detectable by near-future space telescopes.« less

Wide-band 'black silicon' with atomic layer deposited NbN.

PubMed

Isakov, Kirill; Perros, Alexander Pyymaki; Shah, Ali; Lipsanen, Harri

2018-08-17

Antireflection surfaces are often utilized in optical components to reduce undesired reflection and increase absorption. We report on black silicon (b-Si) with dramatically enhanced absorption over a broad wavelength range (250-2500 nm) achieved by applying a 10-15 nm conformal coating of NbN with atomic layer deposition (ALD). The improvement is especially pronounced in the near infrared (NIR) range of 1100-2500 nm where absorption is increased by >90%. A significant increase of absorption is also observed over the ultraviolet range of 200-400 nm. Preceding NbN deposition with a nanostructured ALD Al 2 O 3 (n-Al 2 O 3 ) coating to enhance the NbN texture was also examined. Such texturing further improves absorption in the NIR, especially at longer wavelengths, strong absorption up to 4-5 μm wavelengths has been attested. For comparison, double side polished silicon and sapphire coated with 10 nm thick NbN exhibited absorption of only ∼55% in the NIR range of 1100-2500 nm. The results suggest a positive correlation between the surface area of NbN coating and optical absorption. Based on the wide-band absorption, the presented NbN-coated b-Si may be an attractive candidate for use in e.g. spectroscopic systems, infrared microbolometers.

Transport Measurements and Synchrotron-Based X-Ray Absorption Spectroscopy of Iron Silicon Germanide Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Elmarhoumi, Nader; Cottier, Ryan; Merchan, Greg; Roy, Amitava; Lohn, Chris; Geisler, Heike; Ventrice, Carl, Jr.; Golding, Terry

2009-03-01

Some of the iron-based metal silicide and germanide phases have been predicted to be direct band gap semiconductors. Therefore, they show promise for use as optoelectronic materials. We have used synchrotron-based x-ray absorption spectroscopy to study the structure of iron silicon germanide films grown by molecular beam epitaxy. A series of Fe(Si1-xGex)2 thin films (2000 -- 8000å) with a nominal Ge concentration of up to x = 0.04 have been grown. X-ray absorption near edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) measurements have been performed on the films. The nearest neighbor co-ordination corresponding to the β-FeSi2 phase of iron silicide provides the best fit with the EXAFS data. Temperature dependent (20 < T < 350 K) magneto transport measurements were done on the Fe(Si1-xGex)2 thin films via Van Der Paw (VDP) Hall configuration using a 0.5-1T magnetic field and a current of 10-200 μA through indium ohmic contacts, the Hall coefficient was calculated. Results suggest semiconducting behavior of the films which is consistent with the EXAFS results.

Quick-scanning x-ray absorption spectroscopy system with a servo-motor-driven channel-cut monochromator with a temporal resolution of 10 ms.

PubMed

Nonaka, T; Dohmae, K; Araki, T; Hayashi, Y; Hirose, Y; Uruga, T; Yamazaki, H; Mochizuki, T; Tanida, H; Goto, S

2012-08-01

We have developed a quick-scanning x-ray absorption fine structure (QXAFS) system and installed it at the recently constructed synchrotron radiation beamline BL33XU at the SPring-8. Rapid acquisition of high-quality QXAFS data was realized by combining a servo-motor-driven Si channel-cut monochromator with a tapered undulator. Two tandemly aligned monochromators with channel-cut Si(111) and Si(220) crystals covered energy ranges of 4.0-28.2 keV and 6.6-46.0 keV, respectively. The system allows the users to adjust instantly the energy ranges of scans, the starting angles of oscillations, and the frequencies. The channel-cut crystals are cooled with liquid nitrogen to enable them to withstand the high heat load from the undulator radiation. Deformation of the reflecting planes is reduced by clamping each crystal with two cooling blocks. Performance tests at the Cu K-edge demonstrated sufficiently high data quality for x-ray absorption near-edge structure and extended x-ray absorption fine-structure analyses with temporal resolutions of up to 10 and 25 ms, respectively.

High photon-to-heat conversion efficiency in the wavelength region of 250–1200 nm based on a thermoelectric Bi2Te3 film structure

PubMed Central

Hu, Er-Tao; Yao, Yuan; Zang, Kai-Yan; Liu, Xin-Xing; Jiang, An-Qing; Zheng, Jia-Jin; Yu, Ke-Han; Wei, Wei; Zheng, Yu-Xiang; Zhang, Rong-Jun; Wang, Song-You; Zhao, Hai-Bin; Yoshie, Osamu; Lee, Young-Pak; Wang, Cai-Zhuang; Lynch, David W.; Guo, Jun-Peng; Chen, Liang-Yao

2017-01-01

In this work, 4-layered SiO2/Bi2Te3/SiO2/Cu film structures were designed and fabricated and the optical properties investigated in the wavelength region of 250–1200 nm for their promising applications for direct solar-thermal-electric conversion. A typical 4-layered film sample with the structure SiO2 (66.6 nm)/Bi2Te3 (7.0 nm)/SiO2 (67.0 nm)/Cu (>100.0 nm) was deposited on a Si or K9-glass substrate by magnetron sputtering. The experimental results agree well with the simulated ones showing an average optical absorption of 96.5%, except in the shorter wavelength region, 250–500 nm, which demonstrates the superior absorption property of the 4-layered film due to the randomly rough surface of the Cu layer resulting from the higher deposition power. The high reflectance of the film structure in the long wavelength region of 2–20 μm will result in a low thermal emittance, 0.064 at 600 K. The simpler 4-layered structure with the thermoelectric Bi2Te3 used as the absorption layer may provide a straightforward way to obtain solar-thermal-electric conversion more efficiently through future study. PMID:28300178

IUE observations of Si and C lines and comparison with non-LTE models

NASA Technical Reports Server (NTRS)

Kamp, L. W.

1982-01-01

Classical model atmosphere techniques are applied to analyze IUE spectra, and to determine abundances, effective temperatures and gravities. Measurements of the equivalent widths and other properties of the line profiles of 24 photospheric lines of Si II, Si III, Si IV, C II, C III and C IV are presented in the range of 1175-1725 A for seven B and two O stars. Observed line profiles are compared with theoretical profiles computed using non-LTE theory and models, and using line-blanketed model atmospheres. Agreement is reasonably good, although strong lines are calculated to be systematically stronger than those observed, while the reverse occurs for weak lines, and empirical profiles have smaller wings than theoretical profiles. It is concluded that the present theory of line formation when used with solar abundances, represents fairly well observed UV photospheric lines of silicon and carbon ions in the atmospheres of main sequence stars of types B5-O9.

Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

PubMed

Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

2010-05-21

The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

Visual and Plasmon Resonance Absorption Sensor for Adenosine Triphosphate Based on the High Affinity between Phosphate and Zr(IV).

PubMed

Qi, Wenjing; Liu, Zhongyuan; Zhang, Wei; Halawa, Mohamed Ibrahim; Xu, Guobao

2016-10-12

Zr(IV) can form phosphate and Zr(IV) (-PO₃ 2- -Zr 4+ -) complex owing to the high affinity between Zr(IV) with phosphate. Zr(IV) can induce the aggregation of gold nanoparticles (AuNPs), while adenosine triphosphate(ATP) can prevent Zr(IV)-induced aggregation of AuNPs. Herein, a visual and plasmon resonance absorption (PRA)sensor for ATP have been developed using AuNPs based on the high affinity between Zr(IV)with ATP. AuNPs get aggregated in the presence of certain concentrations of Zr(IV). After the addition of ATP, ATP reacts with Zr(IV) and prevents AuNPs from aggregation, enabling the detection of ATP. Because of the fast interaction of ATP with Zr(IV), ATP can be detected with a detection limit of 0.5 μM within 2 min by the naked eye. Moreover, ATP can be detected by the PRA technique with higher sensitivity. The A 520nm / A 650nm values in PRA spectra increase linearly with the concentrations of ATP from 0.1 μM to 15 μM (r = 0.9945) with a detection limit of 28 nM. The proposed visual and PRA sensor exhibit good selectivity against adenosine, adenosine monophosphate, guanosine triphosphate, cytidine triphosphate and uridine triphosphate. The recoveries for the analysis of ATP in synthetic samples range from 95.3% to 102.0%. Therefore, the proposed novel sensor for ATP is promising for real-time or on-site detection of ATP.

Simultaneous speciation and preconcentration of ultra traces of inorganic tellurium and selenium in environmental samples by hollow fiber liquid phase microextraction prior to electrothermal atomic absorption spectroscopy determination.

PubMed

Ghasemi, Ensieh; Najafi, Nahid Mashkouri; Raofie, Farhad; Ghassempour, Alireza

2010-09-15

A simple and effective speciation and preconcentration method based on hollow fiber liquid phase microextraction (HF-LPME) was developed for simultaneous separation of trace inorganic tellurium and selenium in environmental samples prior to electrothermal atomic absorption spectroscopy (ETAAS) determination. The method involves the selective extraction of the Te (IV) and Se (IV) species by HF-LPME with the use of ammonium pyrrolidinecarbodithioate (APDC) as the chelating agent. The complex compounds were extracted into 10 microL of toluene and the solutions were injected into a graphite furnace for the determination of Te (IV) and Se (IV). To determine the total tellurium and selenium in the samples, first Te (VI) and Se (VI) were reduced to Te (IV) and Se (IV), and then the microextraction method was performed. The experimental parameters of HF-LPME were optimized using a central composite design after a 2(n-1) fractional factorial experimental design. Under optimum conditions, enrichment factors of up to 520 and 480 were achieved for Te (IV) and Se (IV), respectively. The detection limits were 4 ng L(-1) with 3.5% RSD (n=5, c=2.0 microg L(-1)) for Te (IV) and 5 ng L(-1) with 3.1% RSD for Se (IV). The applicability of the developed technique was evaluated by application to spiked, environmental water and soil samples. Copyright 2010 Elsevier B.V. All rights reserved.

FTIR study of silicon carbide amorphization by heavy ion irradiations

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

2017-03-01

We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C-SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C-SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

Absorption and scattering by interstellar dust in the silicon K-edge of GX 5-1

NASA Astrophysics Data System (ADS)

Zeegers, S. T.; Costantini, E.; de Vries, C. P.; Tielens, A. G. G. M.; Chihara, H.; de Groot, F.; Mutschke, H.; Waters, L. B. F. M.; Zeidler, S.

2017-03-01

Context. We study the absorption and scattering of X-ray radiation by interstellar dust particles, which allows us to access the physical and chemical properties of dust. The interstellar dust composition is not well understood, especially on the densest sight lines of the Galactic plane. X-rays provide a powerful tool in this study. Aims: We present newly acquired laboratory measurements of silicate compounds taken at the Soleil synchrotron facility in Paris using the Lucia beamline. The dust absorption profiles resulting from this campaign were used in this pilot study to model the absorption by interstellar dust along the line of sight of the low-mass X-ray binary GX 5-1. Methods: The measured laboratory cross-sections were adapted for astrophysical data analysis and the resulting extinction profiles of the Si K-edge were implemented in the SPEX spectral fitting program. We derive the properties of the interstellar dust along the line of sight by fitting the Si K-edge seen in absorption in the spectrum of GX 5-1. Results: We measured the hydrogen column density towards GX 5-1 to be 3.40 ± 0.1 × 1022 cm-2. The best fit of the silicon edge in the spectrum of GX 5-1 is obtained by a mixture of olivine and pyroxene. In this study, our modeling is limited to Si absorption by silicates with different Mg:Fe ratios. We obtained an abundance of silicon in dust of 4.0 ± 0.3 × 10-5 per H atom and a lower limit for total abundance, considering both gas and dust of >4.4 × 10-5 per H atom, which leads to a gas to dust ratio of >0.22. Furthermore, an enhanced scattering feature in the Si K-edge may suggest the presence of large particles along the line of sight.

Selective femtosecond laser structuring of dielectric thin films with different band gaps: a time-resolved study of ablation mechanisms

NASA Astrophysics Data System (ADS)

Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2016-12-01

Ultrashort pulse lasers have been increasingly gaining importance for the selective structuring of dielectric thin films in industrial applications. In a variety of works the ablation of thin SiO2 and SiNx films from Si substrates has been investigated with near infrared laser wavelengths with photon energies of about 1.2 eV where both dielectrics are transparent (E_{{gap,SiO2}}≈ 8 eV; E_{{gap,SiN}x}≈ 2.5 eV). In these works it was found that few 100 nm thick SiO2 films are selectively ablated with a "lift-off" initiated by confined laser ablation whereas the SiN_{{x}} films are ablated by a combination of confined and direct laser ablation. In the work at hand, ultrafast pump-probe imaging was applied to compare the laser ablation dynamics of the two thin film systems directly with the uncoated Si substrate—on the same setup and under identical parameters. On the SiO2 sample, results show the pulse absorption in the Si substrate, leading to the confined ablation of the SiO2 layer by the expansion of the substrate. On the SiN_{{x}} sample, direct absorption in the layer is observed leading to its removal by evaporation. The pump-probe measurements combined with reflectivity corrected threshold fluence investigations suggest that melting of the Si substrate is sufficient to initiate the lift-off of an overlaying transparent film—evaporation of the substrate seems not to be necessary.

First-principles study on silicon atom doped monolayer graphene

NASA Astrophysics Data System (ADS)

Rafique, Muhammad; Shuai, Yong; Hussain, Nayyar

2018-01-01

This paper illustrates the structural, electronic and optical properties of individual silicon (Si) atom-doped single layer graphene using density functional theory method. Si atom forms tight bonding with graphene layer. The effect of doping has been investigated by varying the concentration of Si atoms from 3.125% to 9.37% (i.e. From one to three Si atoms in 4 × 4 pure graphene supercell containing 32 carbon atoms), respectively. Electronic structure, partial density of states (PDOS) and optical properties of pure and Si atom-doped graphene sheet were calculated using VASP (Vienna ab-initio Simulation Package). The calculated results for pure graphene sheet were then compared with Si atom doped graphene. It is revealed that upon Si doping in graphene, a finite band gap appears at the high symmetric K-point, thereby making graphene a direct band gap semiconductor. Moreover, the band gap value is directly proportional to the concentration of impurity Si atoms present in graphene lattice. Upon analyzing the optical properties of Si atom-doped graphene structures, it is found that, there is significant change in the refractive index of the graphene after Si atom substitution in graphene. In addition, the overall absorption spectrum of graphene is decreased after Si atom doping. Although a significant red shift in absorption is found to occur towards visible range of radiation when Si atom is substituted in its lattice. The reflectivity of graphene improves in low energy region after Si atom substitution in graphene. These results can be useful for tuning the electronic structure and to manipulate the optical properties of graphene layer in the visible region.

Enhanced microwave absorption properties of Fe3O4-modified flaky FeSiAl

NASA Astrophysics Data System (ADS)

He, Jun; Deng, Lianwen; Liu, Sheng; Yan, Shuoqing; Luo, Heng; Li, Yuhan; He, Longhui; Huang, Shengxiang

2017-12-01

The magnetic insulator Fe3O4-modified flaky Fe85Si9.5Al5.5 (FeSiAl) powders with significantly enhanced electromagnetic wave absorption properties in the frequency range of 2-8 GHz were prepared by chemical co-precipitation. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have confirmed the formation of nanoparticles Fe3O4 precipitated on the flake-shaped FeSiAl. The electromagnetic measurements of the modified flakes presents a nearly invariable complex permeability and decreased complex permittivity in the 2-8 GHz, as well as improved impedance matching performance. More importantly, an excellent microwave absorbing performance with the bandwidth (RL <-10 dB) of 5.36 GHz is achieved in modified sample with the thickness of 1.5 mm, which is a promising microwave absorbing material in 2-8 GHz.

Three-dimensional carbon nanotube based photovoltaics

NASA Astrophysics Data System (ADS)

Flicker, Jack

2011-12-01

Photovoltaic (PV) cells with a three dimensional (3D) morphology are an exciting new research thrust with promise to create cheaper, more efficient solar cells. This work introduces a new type of 3D PV device based on carbon nanotube (CNT) arrays. These arrays are paired with the thin film heterojunction, CdTe/CdS, to form a complete 3D carbon nanotube PV device (3DCNTPV). Marriage of a complicated 3D structure with production methods traditionally used for planar CdTe solar cell is challenging. This work examines the problems associated with processing these types of cells and systematically alters production methods of the semiconductor layers and electrodes to increase the short circuit current (Isc), eliminate parasitic shunts, and increase the open circuit voltage (Voc). The main benefit of 3D solar cell is the ability to utilize multiple photon interactions with the solar cell surface. The three dimensionality allows photons to interact multiple times with the photoactive material, which increases the absorption and the overall power output over what is possible with a two dimensional (2D) morphology. To quantify the increased power output arising from these multiple photon interactions, a new absorption efficiency term, eta3D, is introduced. The theoretical basis behind this new term and how it relates to the absorption efficiency of a planar cell, eta 2D, is derived. A unique model for the average number of multiple photon impingements, Gamma, is proposed based on three categories of 3D morphology: an infinite trench, an enclosed box, and an array of towers. The derivation of eta3D and Gamma for these 3D PV devices gives a complete picture of the enhanced power output over 2D cells based on CNT array height, pitch, radius, and shape. This theory is validated by monte carlo simulations and experiment. This new type of 3D PV devices has been shown to work experimentally. The first 3DCNTPV cells created posses Isc values of 0.085 to 17.872mA/cm2 and Voc values in the range of 2 to 122mV. These figures of merit are low for CdTe cells, so planar cells without CNTs and planar cells with unpatterned CNTs were developed. The planar cells had figures of merit about the same as the 3DCNTPV cells, indicating that the low efficiency of the 3DCNTPV cell is due to processing and not inherent to the 3D structure. CNTs were successfully grown directly on an Ag underlayer, but the growth reproducibility and the CNT height was not sufficient for use in 3DCNTPV devices. Therefore, CNTs were grown on a SiO2 passivated Si wafer and then metallized. This eliminated the CNTs as the back contact and used them only as a structure to provide the 3D morphology. These cells exhibited low shunt resistances on the order of 300O, causing a straight line IV curve. This shunting was found to be caused by the ion assisted deposition of ITO. This plasma process etched away semiconducting layers and caused pinholes in the CdTe/CdS film. Many different strategies were utilized to try and eliminate this shunt and induce curvature in the IV curve, including adding sacrificial metal layers before the ITO deposition, using electron beam evaporated ITO, and using RF sputtered ITO. The addition of metal layers before ITO deposition did not result in cells which could reliably demonstrate both photocurrent and IV curvature. Electron beam deposition of ITO resulted in cells with excellent IV curvature, but the ITO deposited in this manner was too resistive and absorptive to create well functioning cells. The output power of the cells at varying incident angles of light was measured. The cells show an increase in the normalized power output compared to similar planar cells when the solar ux is at off-normal angles. The power output vs. incident angle curve takes an inverted C-type curve as predicted by the theory developed here. The complete theory of 3DCNTPV presented in this work describes the power output vs. incident angle of a 3DCNTPV cell based only on cell morphology. The experimental power output vs. zenith angle was compared to the theoretically calculated power output with very good agreement between the two. (Abstract shortened by UMI.)

IUE observations of long period eclipsing binaries - A study of accretion onto non-degenerate stars

NASA Technical Reports Server (NTRS)

Plavec, M. J.

1980-01-01

IUE observations made in 1978-1979 recorded a whole class of interacting long-period binaries similar to beta Lyrae, which includes RX Cas, SX Cas, V 367 Cyg, W Cru, beta Lyr, and W Ser, called the W Serpentis stars. These mass-transferring binaries with relatively high mass transfer rate show two prominent features in the far ultraviolet: a continuum with a color temperature higher than the one observed in the optical region (about 12,000 K), and a strong emission line spectrum with the N V doublet at 1240 A, C IV doublet at 1550 A and lines of Si II, Si III, Si IV, C II, Fe III, AI III, etc. These phenomena are discussed on the assumption that they are due to accretion onto non-degenerate stars.

A shock-tube measurement of the SiO/E 1 Sigma + - X 1 Sigma +/ transition moment

NASA Technical Reports Server (NTRS)

Park, C.

1978-01-01

The sum of the squares of the electronic transition moments for the (E 1 Sigma +) - (X 1 Sigma +) band system of SiO has been determined from absorption measurements conducted in the reflected-shock region of a shock tube. The test gas produced by shock-heating a mixture of SiCl4, N2O, and Ar, and the spectra were recorded photographically in the 150-230-nm wavelength range. The values of the sum of the squares were determined by comparing the measured absorption spectra with those produced by a line-by-line synthetic spectrum calculation. The value so deduced at an r-centroid value of 3.0 bohr was 0.86 + or - 0.10 atomic unit.

The investigation of optimal Silicon/Silicon(1-x)Germanium(x) thin-film solar cells with quantitative analysis

NASA Astrophysics Data System (ADS)

Ehsan, Md Amimul

Thin-film solar cells are emerging from the research laboratory to become commercially available devices for low cost electrical power generation applications. Silicon which is a cheap, abundant and non-toxic elemental semiconductor is an attractive candidate for these solar cells. Advanced modeling and simulation of Si thin-film solar cells has been performed to make this technology more cost effective without compromising the performance and efficiency. In this study, we focus on the design and optimization of Si/Si1-xGex heterostructures, and microcrystalline and nanocrystalline Si thin-film solar cells. Layer by layer optimization of these structures was performed by using advanced bandgap engineering followed by numerical analysis for their structural, electrical and optical characterizations. Special care has been introduced for the selection of material layers which can help to improve the light absorption properties of these structures for harvesting the solar spectrum. Various strategies such as the optimization of the doping concentrations, Ge contents in Si1-xGex buffer layer, incorporation of the absorber layers and surface texturing have been in used to improve overall conversion efficiencies of the solar cells. To be more specific, the observed improvement in the conversion efficiency of these solar cells has been calculated by tailoring the thickness of the buffer, absorber, and emitter layers. In brief, an approach relying on the phenomena of improved absorption of the buffer and absorber layer which leads to a corresponding gain in the open circuit voltage and short circuit current is explored. For numerical analysis, a PC1D simulator is employed that uses finite element analysis technique for solving semiconductor transport equations. A comparative study of the Si/Si1-xGex and Ge/Si1-xGex is also performed. We found that due to the higher lattice mismatch of Ge to Si, thin-film solar cells based on Si/Si1-xGex heterostructures performed much better. It has been found that microc-Si and nc-Si pin structures have strong dependence on their grain sizes and crystallinity to enhance the light absorption capability of these solar cells. Our results show that silicon based thin-film solar cells exhibit high level of performance making them very competitive for the next generation of low cost photovoltaic technology.

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

DOE PAGES

Young, David L.; Nemeth, William; LaSalvia, Vincenzo; ...

2016-06-01

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO 2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm -2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nmmore » thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV oc) values of 730 mV with J o values of 2 fA/cm 2. Samples doped with B 2H 6 gave iV oc values of 690 mV and J o values of 24 fA/cm 2, outperforming BF 3 doping, which gave iV oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.« less

Wechsler Intelligence Scale for Children-fourth edition (WISC-IV) short-form validity: a comparison study in pediatric epilepsy.

PubMed

Hrabok, Marianne; Brooks, Brian L; Fay-McClymont, Taryn B; Sherman, Elisabeth M S

2014-01-01

The purpose of this article was to investigate the accuracy of the WISC-IV short forms in estimating Full Scale Intelligence Quotient (FSIQ) and General Ability Index (GAI) in pediatric epilepsy. One hundred and four children with epilepsy completed the WISC-IV as part of a neuropsychological assessment at a tertiary-level children's hospital. The clinical accuracy of eight short forms was assessed in two ways: (a) accuracy within +/- 5 index points of FSIQ and (b) the clinical classification rate according to Wechsler conventions. The sample was further subdivided into low FSIQ (≤ 80) and high FSIQ (> 80). All short forms were significantly correlated with FSIQ. Seven-subtest (Crawford et al. [2010] FSIQ) and 5-subtest (BdSiCdVcLn) short forms yielded the highest clinical accuracy rates (77%-89%). Overall, a 2-subtest (VcMr) short form yielded the lowest clinical classification rates for FSIQ (35%-63%). The short form yielding the most accurate estimate of GAI was VcSiMrBd (73%-84%). Short forms show promise as useful estimates. The 7-subtest (Crawford et al., 2010) and 5-subtest (BdSiVcLnCd) short forms yielded the most accurate estimates of FSIQ. VcSiMrBd yielded the most accurate estimate of GAI. Clinical recommendations are provided for use of short forms in pediatric epilepsy.

Surface-plasmon mediated total absorption of light into silicon.

PubMed

Yoon, Jae Woong; Park, Woo Jae; Lee, Kyu Jin; Song, Seok Ho; Magnusson, Robert

2011-10-10

We report surface-plasmon mediated total absorption of light into a silicon substrate. For an Au grating on Si, we experimentally show that a surface-plasmon polariton (SPP) excited on the air/Au interface leads to total absorption with a rate nearly 10 times larger than the ohmic damping rate of collectively oscillating free electrons in the Au film. Rigorous numerical simulations show that the SPP resonantly enhances forward diffraction of light to multiple orders of lossy waves in the Si substrate with reflection and ohmic absorption in the Au film being negligible. The measured reflection and phase spectra reveal a quantitative relation between the peak absorbance and the associated reflection phase change, implying a resonant interference contribution to this effect. An analytic model of a dissipative quasi-bound resonator provides a general formula for the resonant absorbance-phase relation in excellent agreement with the experimental results.

Pentacoordinate silicon(IV): cationic, anionic and neutral complexes derived from the reaction of NHC→SiCl4 with highly Lewis acidic (C2F5)2SiH2.

PubMed

Böttcher, T; Steinhauer, S; Neumann, B; Stammler, H-G; Röschenthaler, G-V; Hoge, B

2014-06-14

Addition of NHC→SiCl4 to the highly Lewis acidic bis(pentafluoroethyl)silane ((C2F5)2SiH2) afforded the salt [(NHC)2SiCl2H][(C2F5)2SiCl3] with pentacoordinate silicon in the cation and the anion. The anion represents the first example of a chlorosilicate structurally characterized in the solid state. In this reaction, the long sought pentacoordinate NHC-adduct of silicochloroform was identified as an intermediate and its crystal structure is presented.

Absorption spectroscopic studies of Np(IV) complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, D. T.

2004-01-01

The complexation of neptunium (IV) with selected inorganic and organic ligands was studied as part of an investigation to establish key subsurface interactions between neptunium and biological systems. The prevalence of reducing environments in most subsurface migation scenarios, which are in many cases induced by biological activity, has increased the role and importance of Np(IV) as a key subsurface neptunium oxidation state. The biodegradation of larger organics that often coexist with actinides in the subsurface leads to the formation of many organic acids as transient products that, by complexation, play a key role in defining the fate and speciation ofmore » neptunium in biologically active systems. These often compete with inorganic complexes e.g. hydrolysis and phosphate. Herein we report the results of a series of complexation studies based on new band formation of the characteristic 960 nm band for Np(IV). Formation constants for Np(IV) complexes with phosphate, hydrolysis, succinate, acetohydroxamic acid, and acetate were determined. These results show the 960 nm absorption band to be very amenable to these types of complexation studies.« less

Gender-related differences in the associations between sexual impulsivity and psychiatric disorders.

PubMed

Erez, Galit; Pilver, Corey E; Potenza, Marc N

2014-08-01

Sexual impulsivity (SI) has been associated with conditions that have substantial public health costs, such as sexually transmitted infections and unintended pregnancies. However, SI has not been examined systematically with respect to its relationships to psychopathology. We aimed to investigate associations between SI and psychopathology, including gender-related differences. We performed a secondary data analysis of Wave-2 of the National Epidemiologic Survey on Alcohol and Related Conditions (NESARC), a national sample of 34,653 adults in the United States. DSM-IV-based diagnoses of mood, anxiety, drug and personality disorders were assessed using the Alcohol Use Disorder and Associated Disabilities Interview Scheduled DSM-IV Version. The prevalence of SI was considerable (14.7%), with greater acknowledgment by men than women (18.9% versus 10.9%; p < 0.0001). For both women and men, SI was positively associated with most Axis-I and Axis-II psychiatric disorders (OR range: Women, Axis-I:1.89-6.14, Axis-II:2.10-10.02; Men, Axis-I:1.92-6.21, Axis-II:1.63-6.05). Significant gender-related differences were observed. Among women as compared to men, SI was more strongly associated with social phobia, alcohol abuse/dependence, and paranoid, schizotypal, antisocial, borderline, narcissistic, avoidant and obsessive-compulsive personality disorders. The robust associations between SI and psychopathology across genders suggest the need for screening and interventions related to SI for individuals with psychiatric concerns. The stronger associations between SI and psychopathology among women as compared to men emphasize the importance of a gender-oriented perspective in targeting SI. Longitudinal studies are needed to determine the extent to SI predates, postdates or co-occurs with specific psychiatric conditions. Copyright © 2014 Elsevier Ltd. All rights reserved.

Neutron absorption of Al-Si-Mg-B{sub 4}C composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullah, Yusof, E-mail: yusofabd@nuclearmalaysia.gov.my; Yusof, Mohd Reusmaazran; Ibrahim, Anis Syukriah

2016-01-22

Al-Si-Mg-B{sub 4}C composites containing 2-8 wt% of B{sub 4}C were prepared by stir casting technique. Homogenization treatment was carried out at temperatures of 540°C for 4 houra and followed by ageing at 180°C for 2 houra. Microstructure and phase identification were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD) respectively. Neutron absorption study was investigated using neutron source Am/Be{sup 241}. The result indicated that higher B{sub 4}C content improved the neutron absorption property. Meanwhile homogeneity of the composite was increased by ageing processes. This composite is potential to be used as neutron shielding material especially for nuclear reactormore » application.« less

Addition of 20-kDa PEG to Insulin Lispro Alters Absorption and Decreases Clearance in Animals.

PubMed

Knadler, Mary Pat; Nguyen, Tri-Hung; Campanale, Kristina; De Veer, Michael J; Beals, John M; Li, Shun; Hansen, Ryan; Siesky, Angela; Michael, M Dodson; Porter, Christopher J H

2016-12-01

Determine the pharmacokinetics of insulin peglispro (BIL) in 5/6-nephrectomized rats and study the absorption in lymph duct cannulated (LDC) sheep. BIL is insulin lispro modified with 20-kDa linear PEG at lysine B28 increasing the hydrodynamic size to 4-fold larger than insulin lispro. Pharmacokinetics of BIL and insulin lispro after IV administration were compared in 5/6-nephrectomized and sham rats. BIL was administered IV or SC into the interdigital space of the hind leg, and peripheral lymph and/or serum samples were collected from both LDC and non-LDC sheep to determine pharmacokinetics and absorption route of BIL. The clearance of BIL was similar in 5/6-nephrectomized and sham rats, while the clearance of insulin lispro was 3.3-fold slower in 5/6-nephrectomized rats than in the sham rats. In non-LDC sheep, the terminal half-life after SC was about twice as long vs IV suggesting flip-flop pharmacokinetics. In LDC sheep, bioavailability decreased to <2%; most of the dose was absorbed via the lymphatic system, with 88% ± 19% of the dose collected in the lymph after SC administration. This work demonstrates that increasing the hydrodynamic size of insulin lispro through PEGylation can impact both absorption and clearance to prolong drug action.

Preparation of Al-Si Master Alloy by Electrochemical Reduction of Volcanic Rock in Cryolite Molten Salt

NASA Astrophysics Data System (ADS)

Liu, Aimin; Shi, Zhongning; Xu, Junli; Hu, Xianwei; Gao, Bingliang; Wang, Zhaowen

2016-06-01

Volcanic rock found in the Longgang Volcano Group in Jilin Province of China has properties essentially similar to Apollo lunar soils and previously prepared lunar soil simulants, such as Johnson Space Center Lunar simulant and Minnesota Lunar simulant. In this study, an electrochemical method of preparation of Al-Si master alloy was investigated in 52.7 wt.%NaF-47.3 wt.%AlF3 melt adding 5 wt.% volcanic rock at 1233 K. The cathodic electrochemical process was studied by cyclic voltammetry, and the results showed that the cathodic reduction of Si(IV) is a two-step reversible diffusion-controlled reaction. Si(IV) is reduced to Si(II) by two electron transfers at -1.05 V versus platinum quasi-reference electrode in 52.7 wt.%NaF-47.3 wt.%AlF3 molten salt adding 5 wt.% volcanic rock, while the reduction peak at -1.18 V was the co-deposition of aluminum and silicon. In addition, the cathodic product obtained by galvanostatic electrolysis for 4 h was analyzed by means of x-ray diffraction, x-ray fluorescence, scanning electron microscopy and energy dispersive spectrometry. The results showed that the phase compositions of the products are Al, Si, Al5FeSi, and Al3.21Si0.47, while the components are 90.5 wt.% aluminum, 4.4 wt.% silicon, 1.9 wt.% iron, and 0.2 wt.% titanium.

Midinfrared absorption measured at a lambda/400 resolution with an atomic force microscope.

PubMed

Houel, Julien; Homeyer, Estelle; Sauvage, Sébastien; Boucaud, Philippe; Dazzi, Alexandre; Prazeres, Rui; Ortéga, Jean-Michel

2009-06-22

Midinfrared absorption can be locally measured using a detection combining an atomic force microscope and a pulsed excitation. This is illustrated for the midinfrared bulk GaAs phonon absorption and for the midinfrared absorption of thin SiO(2) microdisks. We show that the signal given by the cantilever oscillation amplitude of the atomic force microscope follows the spectral dependence of the bulk material absorption. The absorption spatial resolution achieved with microdisks is around 50 nanometer for an optical excitation around 22 micrometer wavelength.

Comparison of adverse events of laser and light-assisted hair removal systems in skin types IV-VI.

PubMed

Breadon, Jonith Y; Barnes, Chad A

2007-01-01

Photoepilation, utilizing lasers and noncoherent light sources, is designed to irradiate as much of the follicular unit as possible, with melanin as the target chromophore. Wavelength absorption should generate energy sufficient to heat and destroy the hair follicle, while preserving the surrounding tissue. When performing photoepilation on African-American skin (Fitzpatrick skin types IV-VI) a greater risk of potential epidermal adverse events, such as dyspigmentation, blistering, crusting, edema, and subsequent scarring, is possible. To reduce epidermal melanin absorption of energy longer wavelengths are considered safer for use on Fitzpatrick skin types IV to VI. This article reviews and compares the reported incidences of adverse events in African-American skin, utilizing lasers and noncoherent light sources for assisted hair removal.

Catalytic properties of RNA polymerases IV and V: accuracy, nucleotide incorporation and rNTP/dNTP discrimination.

PubMed

Marasco, Michelle; Li, Weiyi; Lynch, Michael; Pikaard, Craig S

2017-11-02

All eukaryotes have three essential nuclear multisubunit RNA polymerases, abbreviated as Pol I, Pol II and Pol III. Plants are remarkable in having two additional multisubunit RNA polymerases, Pol IV and Pol V, which synthesize noncoding RNAs that coordinate RNA-directed DNA methylation for silencing of transposons and a subset of genes. Based on their subunit compositions, Pols IV and V clearly evolved as specialized forms of Pol II, but their catalytic properties remain undefined. Here, we show that Pols IV and V differ from one another, and Pol II, in nucleotide incorporation rate, transcriptional accuracy and the ability to discriminate between ribonucleotides and deoxyribonucleotides. Pol IV transcription is considerably more error-prone than Pols II or V, which may be tolerable in its synthesis of short RNAs that serve as precursors for siRNAs targeting non-identical members of transposon families. By contrast, Pol V exhibits high fidelity transcription, similar to Pol II, suggesting a need for Pol V transcripts to faithfully reflect the DNA sequence of target loci to which siRNA-Argonaute silencing complexes are recruited. © The Author(s) 2017. Published by Oxford University Press on behalf of Nucleic Acids Research.

A new titanium-bearing calcium aluminosilicate phase. 2: Crystallography and crystal chemistry of grains formed in slowly cooled melts with bulk compositions of calcium-aluminium-rich inclusions

NASA Technical Reports Server (NTRS)

Barber, David J.; Beckett, John R.; Paque, Julie M.; Stolper, Edward

1994-01-01

The crystallography and crystal chemistry of a new calcium- titanium-aluminosilicate mineral (UNK) observed in synthetic analogs to calcium-aluminum-rich inclusions (CAIs) from carbonaceous chondrites was studied by electron diffraction techniques. The unit cell is primitive hexagonal or trigonal, with a = 0.790 +/- 0.02 nm and c = 0.492 +/- 0.002 nm, similar to the lattice parameters of melilite and consistent with cell dimensions for crystals in a mixer furnace slag described by Barber and Agrell (1994). The phase frequently displays an epitactic relationship in which melilite acts as the host, with (0001)(sub UNK) parallel (001)(sub mel) and zone axis group 1 0 -1 0(sub UNK) parallel zone axis group 1 0 0(sub mel). If one of the two space groups determined by Barber and Agrell (1994) for their sample of UNK is applicable (P3m1 or P31m), then the structure is probably characterized by puckered sheets of octahedra and tetrahedra perpendicular to the c-axis with successive sheets coordinated by planar arrays of Ca. In this likely structure, each unit cell contains three Ca sites located in mirror planes, one octahedrally coordinated cation located along a three-fold axis and five tetrahedrally coordinated cations, three in mirrors and two along triads. The octahedron contains Ti but, because there are 1.3-1.9 cations of Ti/formula unit, some of the Ti must also be in tetrahedral coordination, an unusual but not unprecedented situation for a silicate. Tetrahedral sites in mirror planes would contain mostly Si, with lesser amounts of Al while those along the triads correspondingly contain mostly Al with subordinate Ti. The structural formula, therefore, can be expressed as Ca(sub 3)(sup VIII)(Ti,Al)(sup VI)(Al,Ti,Si)(sub 2)(sup IV)(Si,Al)(sub 3)(sup IV)O14 with Si + Ti = 4. Compositions of meteoritic and synthetic Ti-bearing samples of the phase can be described in terms of a binary solid solution between the end-members Ca3TiAl2Si3O14 and Ca3Ti(AlTi)(AlSi2)O14. A Ti-free analog with a formula of Ca3Al2Si4O14 synthesized by Paque et al. (1994) is thought to be related structurally but with the octahedral site being occupied by Al, that is, Ca(sub 3)(sup VIII)Al(sup VI)(Al,Si)(sub 2)(sup IV)(Si)(sub 3)(sup IV)O14.

Distance determination to Broad Line Absorbers in AGN

NASA Astrophysics Data System (ADS)

Bautista, Manuel; Arav, N.; Dunn, J.; Edmonds, D.; Korista, K. T.; Moe, M.; Benn, C.; Ignacio, G.

2009-01-01

We present various techniques for the determination of the physical conditions (density, temperature, total hydrogen column density, and ionization structure), chemical composition, and distances of Broad Line Absorbers (BAL) to the central engine in AGN. We start by discussing various density diagnostics from absorption lines from species such as C II, Si II, and Fe III. On the other hand, lines from metastable levels Fe II are often affected by Bowen fluorescence by scattered C IV photons. Lines from metastable levels of Ni II are usually excited by continuum fluorescence and mostly sensitive to the strength of the radiation field shortward of the Lyman continuum and as such they cam be used as direct distance indicators. Further, we show how the total hydrogen density of the absorber, its ionization parameter and distance can be determined through photoionization modeling of the absorber. Finally, we present our results for outflows of three different quasars: QSO 2359-1241 and SDSS J0318-0600.

High-resolution IUE observations of the 1981 eclipse of 32 CYG

NASA Technical Reports Server (NTRS)

Reimers, D.; Che, A.; Hempe, K.

1981-01-01

32 Cyg shows a spectacular pure emission line spectrum during eclipse. Six weeks later, most lines, which were observed in emission during eclipse, are seen as P Cygni type profiles with strong absorption components. The lines are formed through line scattering of B star light in the extended atmosphere (wind) of the K supergiant. During eclipse, the emission parts of the P Cyg lines remain visible since the size of the line scattering sphere around the B star is larger than the red giant. Other emission lines are formed in a shock front near the B star (CIV, SiIV, FeIII) and possibly in an accretion disk. The strong FeII UV Mult. 191 lambda lambda 1785-88 A is shown to be formed through optical pumping via FeII UV Mult. 9 photons. The phase dependence of the P Cyg type profiles is modelled by means of line transfer calculations in nonspherical, 3-dimensional geometry with velocity fields.

Spectrophotometry of six broad absorption line QSOs

NASA Technical Reports Server (NTRS)

Junkkarinen, Vesa T.; Burbidge, E. Margaret; Smith, Harding E.

1987-01-01

Spectrophotometric observations of six broad absorption-line QSOs (BALQSOs) are presented. The continua and emission lines are compared with those in the spectra of QSOs without BALs. A statistically significant difference is found in the emission-line intensity ratio for (N V 1240-A)/(C IV 1549-A). The median value of (N V)/(C IV) for the BALQSOs is two to three times the median for QSOs without BALs. The absorption features of the BALQSOs are described, and the column densities and limits on the ionization structure of the BAL region are discussed. If the dominant ionization mechanism is photoionization, then it is likely that either the ionizing spectrum is steep or the abundances are considerably different from solar. Collisional ionization may be a significant factor, but it cannot totally dominate the ionization rate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahlawat, Navneet; Aghamkar, Praveen; Ahlawat, Neetu

Lithium lead silicate glasses with composition 30Li{sub 2}O{center_dot}(70-x)PbO{center_dot}xSiO{sub 2}(where, x = 10, 20, 30, 40, 50 mol %)(LPS glasses) were prepared by normal melt quench technique at 1373 K for half an hour in air to understand their structure. Compositional dependence of density, molar volume and glass transition temperature of these glasses indicates more compactness of the glass structure with increasing SiO{sub 2} content. Fourier transform infrared (FTIR) spectroscopic data obtained for these glasses was used to investigate the changes induced in the local structure of samples as the ratio between PbO and SiO{sub 2} content changes from 6.0 tomore » 0.4. The observed absorption band around 450-510 cm{sup -1} in IR spectra of these glasses indicates the presence of network forming PbO{sub 4} tetrahedral units in glass structure. The increase in intensity with increasing SiO{sub 2} content (upto x = 30 mol %) suggests superposition of Pb-O and Si-O bond vibrations in absorption band around 450-510 cm{sup -1}. The values of optical basicity in these glasses were found to be dependent directly on PbO/SiO{sub 2} ratio.« less

Influence of barrier absorption properties on laser patterning thin organic films

NASA Astrophysics Data System (ADS)

Naithani, Sanjeev; Mandamparambil, Rajesh; van Assche, Ferdie; Schaubroeck, David; Fledderus, Henri; Prenen, An; Van Steenberge, Geert; Vanfleteren, Jan

2012-06-01

This paper presents a study of selective ablation of thin organic films (LEP- Light Emitting Polymer, PEDOT:PSS- Poly 3,4-ethylenedioxythiophene: polystyrene sulfonate) by using 248 nm Excimer laser, on various kinds of multilayered SiN barrier foils for the development of Organic Light Emitting Diodes (OLED). Different Silicon Nitride (SiN) barrier foils with dedicated absorption spectra are taken into account for this purpose. The drive for looking into different types of SiN originates from the fact that the laser selective removal of a polymer without damage to the barrier layer underneath is challenging in the dynamic laser processing of thin films. The barrier is solely responsible for the proper encapsulation of the OLED stack. The main limitation of current OLED design is its shorter life span, which is directly related to the moisture or water permeation into the stack, leading to black spots. An optimization of laser parameters like fluence and number of shots has been carried out for the various types of SiN barrier foils. We are able to obtain a wider working process window for the selective removal of LEP and PEDOT:PSS from SiN barrier, by variation of the different types of SiN.

High ink absorption performance of inkjet printing based on SiO2@Al13 core-shell composites

NASA Astrophysics Data System (ADS)

Chen, YiFan; Jiang, Bo; Liu, Li; Du, Yunzhe; Zhang, Tong; Zhao, LiWei; Huang, YuDong

2018-04-01

The increasing growth of the inkjet market makes the inkjet printing more necessary. A composite material based on core-shell structure has been developed and applied to prepare inkjet printing layer. In this contribution, the ink printing record layers based on SiO2@Al13 core-shell composite was elaborated. The prepared core-shell composite materials were characterized by X-ray photoelectron spectroscopy (XPS), zeta potential, X-ray diffraction (XRD), scanning electron microscopy (SEM). The results proved the presence of electrostatic adsorption between SiO2 molecules and Al13 molecules with the formation of the well-dispersed system. In addition, based on the adsorption and the liquid permeability analysis, SiO2@Al13 ink printing record layer achieved a relatively high ink uptake (2.5 gmm-1) and permeability (87%), respectively. The smoothness and glossiness of SiO2@Al13 record layers were higher than SiO2 record layers. The core-shell structure facilitated the dispersion of the silica, thereby improved its ink absorption performance and made the clear printed image. Thus, the proposed procedure based on SiO2@Al13 core-shell structure of dye particles could be applied as a promising strategy for inkjet printing.

Influence of organic solvent on optical and structural properties of ultra-small silicon dots synthesized by UV laser ablation in liquid.

PubMed

Intartaglia, Romuald; Bagga, Komal; Genovese, Alessandro; Athanassiou, Athanassia; Cingolani, Roberto; Diaspro, Alberto; Brandi, Fernando

2012-11-28

Ultra small silicon nanoparticles (Si-NPs) with narrow size distribution are prepared in a one step process by UV picosecond laser ablation of silicon bulk in liquid. Characterization by electron microscopy and absorption spectroscopy proves Si-NPs generation with an average size of 2 nm resulting from an in situ photofragmentation effect. In this context, the current work aims to explore the liquid medium (water and toluene) effect on the Si-NPs structure and on the optical properties of the colloidal solution. Si-NPs with high pressure structure (s.g. Fm3m) and diamond-like structure (s.g. Fd3m), in water, and SiC moissanite 3C phase (s.g. F4[combining macron]3m) in toluene are revealed by the means of High-Resolution TEM and HAADF-STEM measurements. Optical investigations show that water-synthesized Si-NPs have blue-green photoluminescence emission characterized by signal modulation at a frequency of 673 cm(-1) related to electron-phonon coupling. The synthesis in toluene leads to generation of Si-NPs embedded in the graphitic carbon-polymer composite which has intrinsic optical properties at the origin of the optical absorption and luminescence of the obtained colloidal solution.

A search variability in the UV spectrum of Pi Aquarii and Fe 3 shell lines of Be stars

NASA Technical Reports Server (NTRS)

1984-01-01

Several short U1 and U2 observations of Be stars are obtained with the Copernicus satellite. Pi Aquarii (B1 IV-Ve) is observed with the U1 and U2 spectrometers. These scans are compared with earlier observations. Variations in the strengths and profiles of selected shell and photospheric features are examined. In order to study possible changes in the temperature of the circumstellar envelope, features covering a wide range in ionization are observed. Included in the observing program are lines of O VI, N V, Si IV, Si III, S III, Fe III, and N I.

Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

NASA Astrophysics Data System (ADS)

Miyao, Masanobu; Sadoh, Taizoh

2017-05-01

Recent progress in the crystal growth of group-IV-based semiconductor-on-insulators is reviewed from physical and technological viewpoints. Liquid-phase growth based on SiGe-mixing-triggered rapid-melting growth enables formation of hybrid (100) (110) (111)-orientation Ge-on-insulator (GOI) structures, which show defect-free GOI with very high carrier mobility (˜1040 cm2 V-1 s-1). Additionally, SiGe mixed-crystals with laterally uniform composition were obtained by eliminating segregation phenomena during the melt-back process. Low-temperature solid-phase growth has been explored by combining this process with ion-beam irradiation, additional doping of group-IV elements, metal induced lateral crystallization with/without electric field, and metal-induced layer exchange crystallization. These efforts have enabled crystal growth on insulators below 400 °C, achieving high carrier mobility (160-320 cm2 V-1 s-1). Moreover, orientation-controlled SiGe and Ge films on insulators have been obtained below the softening temperatures of conventional plastic films (˜300 °C). Detailed characterization provides an understanding of physical phenomena behind these crystal growth techniques. Applying these methods when fabricating next-generation electronics is also discussed.

Electrical Investigation of Nanostructured Fe2O3/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique

NASA Astrophysics Data System (ADS)

Mansour, Shehab A.; Ibrahim, Mervat M.

2017-11-01

Iron oxide (α-Fe2O3) nanocrystals have been synthesized via the sol-gel technique. The structural and morphological features of these nanocrystals were studied using x-ray diffraction, Fourier transform-infrared spectroscopy and transmission electron microscopy. Colloidal solution of synthesized α-Fe2O3 (hematite) was spin-coated onto a single-crystal p-type silicon (p-Si) wafer to fabricate a heterojunction diode with Mansourconfiguration Ag/Fe2O3/p-Si/Al. This diode was electrically characterized at room temperature using current-voltage (I-V) characteristics in the voltage range from -9 V to +9 V. The fabricated diode showed a good rectification behavior with a rectification factor 1.115 × 102 at 6 V. The junction parameters such as ideality factor, barrier height, series resistance and shunt resistance are determined using conventional I-V characteristics. For low forward voltage, the conduction mechanism is dominated by the defect-assisted tunneling process with conventional electron-hole recombination. However, at higher voltage, I-V ohmic and space charge-limited current conduction was became less effective with the contribution of the trapped-charge-limited current at the highest voltage range.

Structural study of Na2O-B2O3-SiO2 glasses from molecular simulations using a polarizable force field.

PubMed

Pacaud, Fabien; Delaye, Jean-Marc; Charpentier, Thibault; Cormier, Laurent; Salanne, Mathieu

2017-10-28

Sodium borosilicate glasses Na 2 O-B 2 O 3 -SiO 2 (NBS) are complex systems from a structural point of view. Three main building units are present: tetrahedral SiO 4 and BO 4 (B IV ) and triangular BO 3 (B III ). One of the salient features of these compounds is the change of the B III /B IV ratio with the alkali concentration, which is very difficult to capture in force fields-based molecular dynamics simulations. In this work, we develop a polarizable force field that is able to reproduce the boron coordination and more generally the structure of several NBS systems in the glass and in the melt. The parameters of the potential are fitted from density functional theory calculations only, in contrast with the existing empirical potentials for NBS systems. This ensures a strong improvement on the transferability of the parameters from one composition to another. Using this new force field, the structure of NBS systems is validated against neutron diffraction and nuclear magnetic resonance experiments. A special focus is given to the distribution of B III /B IV with respect to the composition and the temperature.

New Mononuclear Cu(II) Complexes and 1D Chains with 4-Amino-4H-1,2,4-triazole

PubMed Central

Dîrtu, Marinela M.; Boland, Yves; Gillard, Damien; Tinant, Bernard; Robeyns, Koen; Safin, Damir A.; Devlin, Eamonn; Sanakis, Yiannis; Garcia, Yann

2013-01-01

The crystal structures of two mononuclear Cu(II) NH2trz complexes [Cu(NH2trz)4(H2O)](AsF6)2 (I) and [Cu(NH2trz)4(H2O)](PF6)2 (II) as well as two coordination polymers [Cu(μ2-NH2trz)2Cl]Cl·H2O (III) and [Cu(μ2-NH2trz)2Cl] (SiF6)0.5·1.5H2O (IV) are presented. Cationic 1D chains with bridging bis-monodentate μ2-coordinated NH2trz and bridging μ2-coordinated chloride ligands are present in III and IV. In these coordination polymers, the Cu(II) ions are strongly antiferromagnetically coupled with J = −128.4 cm−1 for III and J = −143 cm−1 for IV (H = −J∑SiSi+1), due to the nature of the bridges between spin centers. Inter-chain interactions present in the crystal structures were taken into consideration, as well as g factors, which were determined experimentally, for the quantitative modeling of their magnetic properties. PMID:24300095

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, Sylvia -Monique; Wilson, Kathryn; Koch-Muller, Monika

Majoritic garnet, characterized by an excess of silicon (>3 Si per formula unit), is considered one of the major phases of the Earth’s transition zone from 410-660 km depth. Quantifying the H 2O content of nominally anhydrous mantle minerals is necessary to evaluate their water storage capacity from experiments and modeling the Earth’s deep water cycle. We present mineral-specific infrared absorption coefficients for the purpose of quantifying the amount of water incorporated into majorite as hydroxyl point defects. A suite of majoritic garnet samples with varying proportions of Si, Fe, Al, Cr and H 2O was synthesized at conditions ofmore » 18-19 GPa and 1500-1800°C. Single-crystals were characterized using X-ray diffraction, electron microprobe analysis, secondary Ion Mass spectrometry (SIMS), IR, Raman and Mössbauer spectroscopy. We utilize SIMS and Raman spectroscopy in combination with IR spectroscopy to provide IR absorption coefficients for water in majoritic garnets with the general mineral formula (Mg,Fe) 3(Si,Mg,Fe,Al,Cr) 2[SiO4] 3. Furthermore, the IR absorption coefficient for majoritic garnet in the OH stretching region is frequency-dependent and ranges from 10 470 ± 3100 Lmol-1cm-2 to 23 400 ± 2300 Lmol -1cm -2.« less

Quantification of water in majoritic garnet

DOE PAGES

Thomas, Sylvia -Monique; Wilson, Kathryn; Koch-Muller, Monika; ...

2015-05-01

Majoritic garnet, characterized by an excess of silicon (>3 Si per formula unit), is considered one of the major phases of the Earth’s transition zone from 410-660 km depth. Quantifying the H 2O content of nominally anhydrous mantle minerals is necessary to evaluate their water storage capacity from experiments and modeling the Earth’s deep water cycle. We present mineral-specific infrared absorption coefficients for the purpose of quantifying the amount of water incorporated into majorite as hydroxyl point defects. A suite of majoritic garnet samples with varying proportions of Si, Fe, Al, Cr and H 2O was synthesized at conditions ofmore » 18-19 GPa and 1500-1800°C. Single-crystals were characterized using X-ray diffraction, electron microprobe analysis, secondary Ion Mass spectrometry (SIMS), IR, Raman and Mössbauer spectroscopy. We utilize SIMS and Raman spectroscopy in combination with IR spectroscopy to provide IR absorption coefficients for water in majoritic garnets with the general mineral formula (Mg,Fe) 3(Si,Mg,Fe,Al,Cr) 2[SiO4] 3. Furthermore, the IR absorption coefficient for majoritic garnet in the OH stretching region is frequency-dependent and ranges from 10 470 ± 3100 Lmol-1cm-2 to 23 400 ± 2300 Lmol -1cm -2.« less

Mechanism of Pressure-Induced Phase Transitions, Amorphization, and Absorption-Edge Shift in Photovoltaic Methylammonium Lead Iodide.

PubMed

Szafrański, Marek; Katrusiak, Andrzej

2016-09-01

Our single-crystal X-ray diffraction study of methylammonium lead triiodide, MAPbI3, provides the first comprehensive structural information on the tetragonal phase II in the pressure range to 0.35 GPa, on the cubic phase IV stable between 0.35 and 2.5 GPa, and on the isostructural cubic phase V observed above 2.5 GPa, which undergoes a gradual amorphization. The optical absorption study confirms that up to 0.35 GPa, the absorption edge of MAPbI3 is red-shifted, allowing an extension of spectral absorption. The transitions to phases IV and V are associated with the abrupt blue shifts of the absorption edge. The strong increase of the energy gap in phase V result in a spectacular color change of the crystal from black to red around 3.5 GPa. The optical changes have been correlated with the pressure-induced strain of the MAPbI3 inorganic framework and its frustration, triggered by methylammonium cations trapped at random orientations in the squeezed voids.

Nanoscale assembly of silicon-like [Al(As1-xNx)]ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties

NASA Astrophysics Data System (ADS)

Jiang, L.; Sims, P. E.; Grzybowski, G.; Beeler, R. T.; Chizmeshya, A. V. G.; Smith, D. J.; Kouvetakis, J.; Menéndez, J.

2013-07-01

Ab initio theoretical simulations of Al(As1-xNx)Si3 alloys, a new class of optoelectronic materials, confirm that these compounds are likely to be disordered via a mechanism that preserves the integrity of the constituent III-V-Si3 tetrahedra but randomizes their orientation in the average diamond lattice of the compound. This type of disorder is consistent with experimental structural data and with the proposed growth mechanism for such alloys, according to which “III:V(SiH3)3” intermediate complexes are formed in the gas phase from reactions between group-III atomic beams and V(SiH3)3 molecules, delivering the entire III-V-Si3 tetrahedra to the growing film. Experimental optical studies of these Al(As1-xNx)Si3 alloys as well as more general [Al(As1-xNx)]ySi5-2y compounds grown on Si substrates were carried out using spectroscopic ellipsometry. The resulting dielectric functions are found to be similar to broadened versions of their counterparts in pure Si. This broadening may have important practical applications, particularly in photovoltaics, because it dramatically enhances the optical absorption of Si in the visible range of the electromagnetic spectrum. A critical point analysis reveals the existence of direct optical transitions at energies as low as 2.5 eV, well below the lowest direct absorption edge of Si at 3.3 eV. Such transitions are predicted theoretically for perfectly ordered III-V-Si3 compounds, and the experimental results suggest that they are robust against tetrahedra orientational disorder.

Visual and Plasmon Resonance Absorption Sensor for Adenosine Triphosphate Based on the High Affinity between Phosphate and Zr(IV)

PubMed Central

Qi, Wenjing; Liu, Zhongyuan; Zhang, Wei; Halawa, Mohamed Ibrahim; Xu, Guobao

2016-01-01

Zr(IV) can form phosphate and Zr(IV) (–PO32−–Zr4+–) complex owing to the high affinity between Zr(IV) with phosphate. Zr(IV) can induce the aggregation of gold nanoparticles (AuNPs), while adenosine triphosphate(ATP) can prevent Zr(IV)-induced aggregation of AuNPs. Herein, a visual and plasmon resonance absorption (PRA)sensor for ATP have been developed using AuNPs based on the high affinity between Zr(IV)with ATP. AuNPs get aggregated in the presence of certain concentrations of Zr(IV). After the addition of ATP, ATP reacts with Zr(IV) and prevents AuNPs from aggregation, enabling the detection of ATP. Because of the fast interaction of ATP with Zr(IV), ATP can be detected with a detection limit of 0.5 μM within 2 min by the naked eye. Moreover, ATP can be detected by the PRA technique with higher sensitivity. The A520nm/A650nm values in PRA spectra increase linearly with the concentrations of ATP from 0.1 μM to 15 μM (r = 0.9945) with a detection limit of 28 nM. The proposed visual and PRA sensor exhibit good selectivity against adenosine, adenosine monophosphate, guanosine triphosphate, cytidine triphosphate and uridine triphosphate. The recoveries for the analysis of ATP in synthetic samples range from 95.3% to 102.0%. Therefore, the proposed novel sensor for ATP is promising for real-time or on-site detection of ATP. PMID:27754349

Absorption line indices in the UV. I. Empirical and theoretical stellar population models

NASA Astrophysics Data System (ADS)

Maraston, C.; Nieves Colmenárez, L.; Bender, R.; Thomas, D.

2009-01-01

Aims: Stellar absorption lines in the optical (e.g. the Lick system) have been extensively studied and constitute an important stellar population diagnostic for galaxies in the local universe and up to moderate redshifts. Proceeding towards higher look-back times, galaxies are younger and the ultraviolet becomes the relevant spectral region where the dominant stellar populations shine. A comprehensive study of ultraviolet absorption lines of stellar population models is however still lacking. With this in mind, we study absorption line indices in the far and mid-ultraviolet in order to determine age and metallicity indicators for UV-bright stellar populations in the local universe as well as at high redshift. Methods: We explore empirical and theoretical spectral libraries and use evolutionary population synthesis to compute synthetic line indices of stellar population models. From the empirical side, we exploit the IUE-low resolution library of stellar spectra and system of absorption lines, from which we derive analytical functions (fitting functions) describing the strength of stellar line indices as a function of gravity, temperature and metallicity. The fitting functions are entered into an evolutionary population synthesis code in order to compute the integrated line indices of stellar populations models. The same line indices are also directly evaluated on theoretical spectral energy distributions of stellar population models based on Kurucz high-resolution synthetic spectra, In order to select indices that can be used as age and/or metallicity indicators for distant galaxies and globular clusters, we compare the models to data of template globular clusters from the Magellanic Clouds with independently known ages and metallicities. Results: We provide synthetic line indices in the wavelength range ~1200 Å to ~3000 Å for stellar populations of various ages and metallicities.This adds several new indices to the already well-studied CIV and SiIV absorptions. Based on the comparison with globular cluster data, we select a set of 11 indices blueward of the 2000 Å rest-frame that allows us to recover well the ages and the metallicities of the clusters. These indices are ideal to study ages and metallicities of young galaxies at high redshift. We also provide the synthetic high-resolution stellar population SEDs.

Limitation of optical properties through porous silicon photonic crystals influenced by porosity and lattice dynamic

NASA Astrophysics Data System (ADS)

Amedome Min-Dianey, Kossi Aniya; Zhang, Hao-Chun; M'Bouana, Noé Landry Privace; Kougblenou, Komi; Xia, Xinlin

2018-01-01

Finite differential time domain (FDTD) tools were applied to simulate the optical properties characteristics' through square and triangular lattices of porous silicon (pSi) photonic crystals (PhCs); which consisted of periodical patterns of circular air holes built into the pSi material. This was used to investigate the influence of porosity and lattice dynamic on the reflection, transmission and absorption characteristics through unit cell pSi PhC in the visible wavelength domain (400 nm - 700 nm). The numerical simulation was achieved using FDTD Lumerical solutions with periodic boundary conditions (PBC) and perfectly matched layers (PML) as the appropriate boundary conditions. The results revealed that the limitation of optical properties is dependent on porosity and the lattice dynamic in pSi PhC. This was presented by the trend; the higher the reflection the higher the porosity and a decrease in porosity led to an increase in absorption in both lattice considerations. It was discovered that attaining optimum properties for triangular lattice will entail considering porosities less than 50% and hole radius r to the lattice constant a ratio (r / a) above 0.3 for the absorption characteristic and below 0.3 for the transmission characteristic. Triangular lattice can be adapted to improve the optical pattern through the PhC. In addition, the optimisation of these properties through pSi PhCs was achieved by controlling porosity and the ratio r / a .

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate.

PubMed

Li, Chong; Xue, ChunLai; Liu, Zhi; Cong, Hui; Cheng, Buwen; Hu, Zonghai; Guo, Xia; Liu, Wuming

2016-06-09

Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.

Combined toxicity of silica nanoparticles and methylmercury on cardiovascular system in zebrafish (Danio rerio) embryos.

PubMed

Duan, Junchao; Hu, Hejing; Li, Qiuling; Jiang, Lizhen; Zou, Yang; Wang, Yapei; Sun, Zhiwei

2016-06-01

This study was to investigate the combined toxicity of silica nanoparticles (SiNPs) and methylmercury (MeHg) on cardiovascular system in zebrafish (Danio rerio) embryos. Ultraviolet absorption analysis showed that the co-exposure system had high absorption and stability. The dosages used in this study were based on the NOAEL level. Zebrafish embryos exposed to the co-exposure of SiNPs and MeHg did not show any cardiovascular malformation or atrioventricular block, but had an inhibition effect on bradycardia. Using o-Dianisidine for erythrocyte staining, the cardiac output of zebrafish embryos was decreased gradually in SiNPs, MeHg, co-exposure groups, respectively. Co-exposure of SiNPs and MeHg enhanced the vascular endothelial damage in Tg(fli-1:EGFP) transgenic zebrafish line. Moreover, the co-exposure significantly activated the oxidative stress and inflammatory response in neutrophils-specific Tg(mpo:GFP) transgenic zebrafish line. This study suggested that the combined toxic effects of SiNPs and MeHg on cardiovascular system had more severe toxicity than the single exposure alone. Copyright © 2016 Elsevier B.V. All rights reserved.

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

PubMed Central

Li, Chong; Xue, ChunLai; Liu, Zhi; Cong, Hui; Cheng, Buwen; Hu, Zonghai; Guo, Xia; Liu, Wuming

2016-01-01

Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer. PMID:27279426

Fluorescence x-ray absorption fine structure studies of Fe-Ni-S and Fe-Ni-Si melts to 1600 K

NASA Astrophysics Data System (ADS)

Manghnani, M. H.; Hong, X.; Balogh, J.; Amulele, G.; Sekar, M.; Newville, M.

2008-04-01

We report NiK -edge fluorescence x-ray absorption fine structure spectra (XAFS) for Fe0.75Ni0.05S0.20 and Fe0.75Ni0.05Si0.20 ternary alloys from room temperature up to 1600 K. A high-temperature furnace designed for these studies incorporates two x-ray transparent windows and enables both a vertical orientation of the molten sample and a wide opening angle, so that XAFS can be measured in the fluorescence mode with a detector at 90° with respect to the incident x-ray beam. An analysis of the Ni XAFS data for these two alloys indicates different local structural environments for Ni in Fe0.75Ni0.05S0.20 and Fe0.75Ni0.05Si0.20 melts, with more Ni-Si coordination than Ni-S coordination persisting from room temperature through melting. These results suggest that light elements such as S and Si may impact the structural and chemical properties of Fe-Ni alloys with a composition similar to the earth’s core.

Mn K-edge X-ray absorption studies of oxo- and hydroxo-manganese(IV) complexes: experimental and theoretical insights into pre-edge properties.

PubMed

Leto, Domenick F; Jackson, Timothy A

2014-06-16

Mn K-edge X-ray absorption spectroscopy (XAS) was used to gain insights into the geometric and electronic structures of [Mn(II)(Cl)2(Me2EBC)], [Mn(IV)(OH)2(Me2EBC)](2+), and [Mn(IV)(O)(OH)(Me2EBC)](+), which are all supported by the tetradentate, macrocyclic Me2EBC ligand (Me2EBC = 4,11-dimethyl-1,4,8,11-tetraazabicyclo[6.6.2]hexadecane). Analysis of extended X-ray absorption fine structure (EXAFS) data for [Mn(IV)(O)(OH)(Me2EBC)](+) revealed Mn-O scatterers at 1.71 and 1.84 Å and Mn-N scatterers at 2.11 Å, providing the first unambiguous support for the formulation of this species as an oxohydroxomanganese(IV) adduct. EXAFS-determined structural parameters for [Mn(II)(Cl)2(Me2EBC)] and [Mn(IV)(OH)2(Me2EBC)](2+) are consistent with previously reported crystal structures. The Mn pre-edge energies and intensities of these complexes were examined within the context of data for other oxo- and hydroxomanganese(IV) adducts, and time-dependent density functional theory (TD-DFT) computations were used to predict pre-edge properties for all compounds considered. This combined experimental and computational analysis revealed a correlation between the Mn-O(H) distances and pre-edge peak areas of Mn(IV)═O and Mn(IV)-OH complexes, but this trend was strongly modulated by the Mn(IV) coordination geometry. Mn 3d-4p mixing, which primarily accounts for the pre-edge intensities, is not solely a function of the Mn-O(H) bond length; the coordination geometry also has a large effect on the distribution of pre-edge intensity. For tetragonal Mn(IV)═O centers, more than 90% of the pre-edge intensity comes from excitations to the Mn═O σ* MO. Trigonal bipyramidal oxomanganese(IV) centers likewise feature excitations to the Mn═O σ* molecular orbital (MO) but also show intense transitions to 3dx(2)-y(2) and 3dxy MOs because of enhanced 3d-4px,y mixing. This gives rise to a broader pre-edge feature for trigonal Mn(IV)═O adducts. These results underscore the importance of reporting experimental pre-edge areas rather than peak heights. Finally, the TD-DFT method was applied to understand the pre-edge properties of a recently reported S = 1 Mn(V)═O adduct; these findings are discussed within the context of previous examinations of oxomanganese(V) complexes.

Frequent ultraviolet brightenings observed in a solar active region with solar maximum mission

NASA Technical Reports Server (NTRS)

Porter, J. G.; Toomre, J.; Gebbie, K. B.

1984-01-01

Observations of the temporal behavior of ultraviolet emission from bright points within an active region of the sun are reported. Frequent and rapid brightenings in Si IV and O IV line emission are seen. The observations suggest that intermittent heating events of modest amplitude are occurring at many sites within an active region. By selecting the brightest site at any given time within an active region and then sampling its behavior in detail within a 120 s interval, it is found that about two-thirds of the samples show variations of the Si IV line intensity. The brightenings typically last about 40-60 s; intensity increases of about 20-100 percent are frequently observed. The results suggest that heating due to magnetic field reconnection within an active region is proceeding almost stochastically. Events involving only a modest release of energy occur the most frequently.

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

George, B. M.; Behrends, J.; Schnegg, A.; Schulze, T. F.; Fehr, M.; Korte, L.; Rech, B.; Lips, K.; Rohrmüller, M.; Rauls, E.; Schmidt, W. G.; Gerstmann, U.

2013-03-01

Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic roughness, (ii) the electronic structure of the interface defects is mainly determined by c-Si, (iii) we identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present a detailed recombination mechanism.

Solution-derived sodalite made with Si- and Ge-ethoxide precursors for immobilizing electrorefiner salt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riley, Brian J.; Lepry, William C.; Crum, Jarrod V.

Chlorosodalite has the general form of Na8(AlSiO4)6Cl2 and this paper describes experiments conducted to synthesize sodalite to immobilize a mixed chloride salt using solution-based techniques. Sodalites were made using different Group IV contributions from either Si(OC2H5)4 or Ge(OC2H5)4, NaAlO2, and a simulated spent electrorefiner salt solution containing a mixture of alkali, alkaline earth, and lanthanide chlorides. Additionally, 6 glass binders at low loadings of 5 mass% were evaluated as sintering aids for the consolidation process. The approach of using the organic Group IV additives can be used to produce large quantities of sodalite at room temperature and shows promise overmore » a method where colloidal silica is used as the silica source. However, the small particle sizes inhibited densification during pressure-less sintering.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and anmore » E-field peak and average intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO 2 and SiO 2 materials.« less

Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

NASA Astrophysics Data System (ADS)

Li, Guijun; Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing

2014-06-01

Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400-800 nm) and bottom (800-1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

Homogenization of CZ Si wafers by Tabula Rasa annealing

NASA Astrophysics Data System (ADS)

Meduňa, M.; Caha, O.; Kuběna, J.; Kuběna, A.; Buršík, J.

2009-12-01

The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, transmission electron microscopy and X-ray diffraction after application of homogenization annealing process called Tabula Rasa. The influence of this homogenization step consisting in short time annealing at high temperature has been observed for various temperatures and times. The experimental results involving the interstitial oxygen decay in Si wafers and absorption spectra of SiOx precipitates during precipitation annealing at 1000∘ C were compared with other techniques for various Tabula Rasa temperatures. The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied is evident from all used experimental techniques. The results qualitatively correlate with prediction of homogenization annealing process based on classical nucleation theory.

Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells

NASA Astrophysics Data System (ADS)

Yang, Guangtao; Guo, Peiqing; Procel, Paul; Weeber, Arthur; Isabella, Olindo; Zeman, Miro

2018-05-01

The poly-Si carrier-selective passivating contacts (CSPCs) parasitically absorb a substantial amount of light, especially in the form of free carrier absorption. To minimize these losses, we developed CSPCs based on oxygen-alloyed poly-Si (poly-SiOx) and deployed them in c-Si solar cells. Transmission electron microscopy analysis indicates the presence of nanometer-scale silicon crystals within such poly-SiOx layers. By varying the O content during material deposition, we can manipulate the crystallinity of the poly-SiOx material and its absorption coefficient. Also, depending on the O content, the bandgap of the poly-SiOx material can be widened, making it transparent for longer wavelength light. Thus, we optimized the O alloying, doping, annealing, and hydrogenation conditions. As a result, an extremely high passivation quality for both n-type poly-SiOx (J0 = 3.0 fA/cm2 and iVoc = 740 mV) and p-type poly-SiOx (J0 = 17.0 fA/cm2 and iVoc = 700 mV) is obtained. A fill factor of 83.5% is measured in front/back-contacted solar cells with both polarities made up of poly-SiOx. This indicates that the carrier transport through the junction between poly-SiOx and c-Si is sufficiently efficient. To demonstrate the merit of poly-SiOx layers' high transparency at long wavelengths, they are deployed at the back side of interdigitated back-contacted (IBC) solar cells. A preliminary cell efficiency of 19.7% is obtained with much room for further improvement. Compared to an IBC solar cell with poly-Si CSPCs, a higher internal quantum efficiency at long wavelengths is observed for the IBC solar cell with poly-SiOx CSPCs, thus demonstrating the potential of poly-SiOx in enabling higher JSC.

Myoglobin and the regulation of mitochondrial respiratory chain complex IV.

PubMed

Yamada, Tatsuya; Takakura, Hisashi; Jue, Thomas; Hashimoto, Takeshi; Ishizawa, Rie; Furuichi, Yasuro; Kato, Yukio; Iwanaka, Nobumasa; Masuda, Kazumi

2016-01-15

Mitochondrial respiration is regulated by multiple elaborate mechanisms. It has been shown that muscle specific O2 binding protein, Myoglobin (Mb), is localized in mitochondria and interacts with respiratory chain complex IV, suggesting that Mb could be a factor that regulates mitochondrial respiration. Here, we demonstrate that muscle mitochondrial respiration is improved by Mb overexpression via up-regulation of complex IV activity in cultured myoblasts; in contrast, suppression of Mb expression induces a decrease in complex IV activity and mitochondrial respiration compared with the overexpression model. The present data are the first to show the biological significance of mitochondrial Mb as a potential modulator of mitochondrial respiratory capacity. Mitochondria are important organelles for metabolism, and their respiratory capacity is a primary factor in the regulation of energy expenditure. Deficiencies of cytochrome c oxidase complex IV, which reduces O2 in mitochondria, are linked to several diseases, such as mitochondrial myopathy. Moreover, mitochondrial respiration in skeletal muscle tissue tends to be susceptible to complex IV activity. Recently, we showed that the muscle-specific protein myoglobin (Mb) interacts with complex IV. The precise roles of mitochondrial Mb remain unclear. Here, we demonstrate that Mb facilitates mitochondrial respiratory capacity in skeletal muscles. Although mitochondrial DNA copy numbers were not altered in Mb-overexpressing myotubes, O2 consumption was greater in these myotubes than that in mock cells (Mock vs. Mb-Flag::GFP: state 4, 1.00 ± 0.09 vs. 1.77 ± 0.34; state 3, 1.00 ± 0.29; Mock: 1.60 ± 0.53; complex 2-3-4: 1.00 ± 0.30 vs. 1.50 ± 0.44; complex IV: 1.00 ± 0.14 vs. 1.87 ± 0.27). This improvement in respiratory capacity could be because of the activation of enzymatic activity of respiratory complexes. Moreover, mitochondrial respiration was up-regulated in myoblasts transiently overexpressing Mb; complex IV activity was solely activated in Mb-overexpressing myoblasts, and complex IV activity was decreased in the myoblasts in which Mb expression was suppressed by Mb-siRNA transfection (Mb vector transfected vs. Mb vector, control siRNA transfected vs. Mb vector, Mb siRNA transfected: 0.15 vs. 0.15 vs. 0.06). Therefore, Mb enhances the enzymatic activity of complex IV to ameliorate mitochondrial respiratory capacity, and could play a pivotal role in skeletal muscle metabolism. © 2015 The Authors. The Journal of Physiology © 2015 The Physiological Society.

Multiband and Broadband Absorption Enhancement of Monolayer Graphene at Optical Frequencies from Multiple Magnetic Dipole Resonances in Metamaterials

NASA Astrophysics Data System (ADS)

Liu, Bo; Tang, Chaojun; Chen, Jing; Xie, Ningyan; Tang, Huang; Zhu, Xiaoqin; Park, Gun-sik

2018-05-01

It is well known that a suspended monolayer graphene has a weak light absorption efficiency of about 2.3% at normal incidence, which is disadvantageous to some applications in optoelectronic devices. In this work, we will numerically study multiband and broadband absorption enhancement of monolayer graphene over the whole visible spectrum, due to multiple magnetic dipole resonances in metamaterials. The unit cell of the metamaterials is composed of a graphene monolayer sandwiched between four Ag nanodisks with different diameters and a SiO2 spacer on an Ag substrate. The near-field plasmon hybridizations between individual Ag nanodisks and the Ag substrate form four independent magnetic dipole modes, which result into multiband absorption enhancement of monolayer graphene at optical frequencies. When the resonance wavelengths of the magnetic dipole modes are tuned to approach one another by changing the diameters of the Ag nanodisks, a broadband absorption enhancement can be achieved. The position of the absorption band in monolayer graphene can be also controlled by varying the thickness of the SiO2 spacer or the distance between the Ag nanodisks. Our designed graphene light absorber may find some potential applications in optoelectronic devices, such as photodetectors.

Tetra- and Hexavalent Uranium Forms Bidentate-Mononuclear Complexes with Particulate Organic Matter in a Naturally Uranium-Enriched Peatland.

PubMed

Mikutta, Christian; Langner, Peggy; Bargar, John R; Kretzschmar, Ruben

2016-10-04

Peatlands frequently serve as efficient biogeochemical traps for U. Mechanisms of U immobilization in these organic matter-dominated environments may encompass the precipitation of U-bearing mineral(oid)s and the complexation of U by a vast range of (in)organic surfaces. The objective of this work was to investigate the spatial distribution and molecular binding mechanisms of U in soils of an alpine minerotrophic peatland (pH 4.7-6.6, E h = -127 to 463 mV) using microfocused X-ray fluorescence spectrometry and bulk and microfocused U L 3 -edge X-ray absorption spectroscopy. The soils contained 2.3-47.4 wt % organic C, 4.1-58.6 g/kg Fe, and up to 335 mg/kg geogenic U. Uranium was found to be heterogeneously distributed at the micrometer scale and enriched as both U(IV) and U(VI) on fibrous and woody plant debris (48 ± 10% U(IV), x̅ ± σ, n = 22). Bulk U X-ray absorption near edge structure (XANES) spectroscopy revealed that in all samples U(IV) comprised 35-68% of total U (x̅ = 50%, n = 15). Shell-fit analyses of bulk U L 3 -edge extended X-ray absorption fine structure (EXAFS) spectra showed that U was coordinated to 1.3 ± 0.2 C atoms at a distance of 2.91 ± 0.01 Å (x̅ ± σ), which implies the formation of bidentate-mononuclear U(IV/VI) complexes with carboxyl groups. We neither found evidence for U shells at ∼3.9 Å, indicative of mineral-associated U or multinuclear U(IV) species, nor for a substantial P/Fe coordination of U. Our data indicates that U(IV/VI) complexation by natural organic matter prevents the precipitation of U minerals as well as U complexation by Fe/Mn phases at our field site, and suggests that organically complexed U(IV) is formed via reduction of organic matter-bound U(VI).

Spot-size converter with a SiO(2) spacer layer between tapered Si and SiON waveguides for fiber-to-chip coupling.

PubMed

Maegami, Yuriko; Takei, Ryohei; Omoda, Emiko; Amano, Takeru; Okano, Makoto; Mori, Masahiko; Kamei, Toshihiro; Sakakibara, Youichi

2015-08-10

We experimentally demonstrate low-loss and polarization-insensitive fiber-to-chip coupling spot-size converters (SSCs) comprised of a three dimensionally tapered Si wire waveguide, a SiON secondary waveguide, and a SiO(2) spacer inserted between them. Fabricated SSCs with the SiO(2) spacer exhibit fiber-to-chip coupling loss of 1.5 dB/facet for both the quasi-TE and TM modes and a small wavelength dependence in the C- and L-band regions. The SiON secondary waveguide is present only around the SSC region, which significantly suppresses the influence of the well-known N-H absorption of plasma-deposited SiON at around 1510 nm.

Impact of one-dimensional photonic crystal back reflector in thin-film c-Si solar cells on efficiency

NASA Astrophysics Data System (ADS)

Jalali, Tahmineh

2018-05-01

In this work, the effect of one-dimensional photonic crystal on optical absorption, which is implemented at the back side of thin-film crystalline silicon (c-Si) solar cells, is extensively discussed. The proposed structure acts as a Bragg reflector which reflects back light to the active layer as well as nanograting which couples the incident light to enhance optical absorption. To understand the optical mechanisms responsible for the enhancement of optical absorption, quantum efficiency and current density for all structures are calculated and the effect of influential parameters, such as grating period is investigated. The results confirm that our proposed structure have a great deal for substantial efficiency enhancement in a broad range from 400 to 1100 nm.

Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

PubMed

Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

2016-01-15

The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

Ancient origin and recent innovations of RNA polymerase IV and V

DOE PAGES

Huang, Yi; Kendall, Timmy; Forsythe, Evan S.; ...

2015-03-12

Small RNA-mediated chromatin modification is a conserved feature of eukaryotes. In flowering plants, the short interfering (si)RNAs that direct transcriptional silencing are abundant and subfunctionalization has led to specialized machinery responsible for synthesis and action of these small RNAs. In particular, plants possess polymerase (Pol) IV and Pol V, multi-subunit homologs of the canonical DNA-dependent RNA Pol II, as well as specialized members of the RNA-dependent RNA Polymerase (RDR), Dicer-like (DCL), and Argonaute (AGO) families. Together these enzymes are required for production and activity of Pol IV-dependent (p4-)siRNAs, which trigger RNA-directed DNA methylation (RdDM) at homologous sequences. p4-siRNAs accumulate highlymore » in developing endosperm, a specialized tissue found only in flowering plants, and are rare in nonflowering plants, suggesting that the evolution of flowers might coincide with the emergence of specialized RdDM machinery. Through comprehensive identification of RdDM genes from species representing the breadth of the land plant phylogeny, we describe the ancient origin of Pol IV and Pol V, suggesting that a nearly complete and functional RdDM pathway could have existed in the earliest land plants. We also uncover innovations in these enzymes that are coincident with the emergence of seed plants and flowering plants, and recent duplications that might indicate additional subfunctionalization. Phylogenetic analysis reveals rapid evolution of Pol IV and Pol V subunits relative to their Pol II counterparts and suggests that duplicates were retained and subfunctionalized through Escape from Adaptive Conflict. Finally, evolution within the carboxy-terminal domain of the Pol V largest subunit is particularly striking, where illegitimate recombination facilitated extreme sequence divergence.« less

Ancient origin and recent innovations of RNA polymerase IV and V

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi; Kendall, Timmy; Forsythe, Evan S.

Small RNA-mediated chromatin modification is a conserved feature of eukaryotes. In flowering plants, the short interfering (si)RNAs that direct transcriptional silencing are abundant and subfunctionalization has led to specialized machinery responsible for synthesis and action of these small RNAs. In particular, plants possess polymerase (Pol) IV and Pol V, multi-subunit homologs of the canonical DNA-dependent RNA Pol II, as well as specialized members of the RNA-dependent RNA Polymerase (RDR), Dicer-like (DCL), and Argonaute (AGO) families. Together these enzymes are required for production and activity of Pol IV-dependent (p4-)siRNAs, which trigger RNA-directed DNA methylation (RdDM) at homologous sequences. p4-siRNAs accumulate highlymore » in developing endosperm, a specialized tissue found only in flowering plants, and are rare in nonflowering plants, suggesting that the evolution of flowers might coincide with the emergence of specialized RdDM machinery. Through comprehensive identification of RdDM genes from species representing the breadth of the land plant phylogeny, we describe the ancient origin of Pol IV and Pol V, suggesting that a nearly complete and functional RdDM pathway could have existed in the earliest land plants. We also uncover innovations in these enzymes that are coincident with the emergence of seed plants and flowering plants, and recent duplications that might indicate additional subfunctionalization. Phylogenetic analysis reveals rapid evolution of Pol IV and Pol V subunits relative to their Pol II counterparts and suggests that duplicates were retained and subfunctionalized through Escape from Adaptive Conflict. Finally, evolution within the carboxy-terminal domain of the Pol V largest subunit is particularly striking, where illegitimate recombination facilitated extreme sequence divergence.« less

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.

PubMed

Kabra, Vinay; Aamir, Lubna; Malik, M M

2014-01-01

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effect of UV illumination on the I-V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

NASA Astrophysics Data System (ADS)

Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat

2018-03-01

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.

Bondonic effects in group-IV honeycomb nanoribbons with Stone-Wales topological defects.

PubMed

Putz, Mihai V; Ori, Ottorino

2014-04-03

This work advances the modeling of bondonic effects on graphenic and honeycomb structures, with an original two-fold generalization: (i) by employing the fourth order path integral bondonic formalism in considering the high order derivatives of the Wiener topological potential of those 1D systems; and (ii) by modeling a class of honeycomb defective structures starting from graphene, the carbon-based reference case, and then generalizing the treatment to Si (silicene), Ge (germanene), Sn (stannene) by using the fermionic two-degenerate statistical states function in terms of electronegativity. The honeycomb nanostructures present η-sized Stone-Wales topological defects, the isomeric dislocation dipoles originally called by authors Stone-Wales wave or SWw. For these defective nanoribbons the bondonic formalism foresees a specific phase-transition whose critical behavior shows typical bondonic fast critical time and bonding energies. The quantum transition of the ideal-to-defect structural transformations is fully described by computing the caloric capacities for nanostructures triggered by η-sized topological isomerisations. Present model may be easily applied to hetero-combinations of Group-IV elements like C-Si, C-Ge, C-Sn, Si-Ge, Si-Sn, Ge-Sn.

Winds in hot main-sequence stars near the static limit

NASA Technical Reports Server (NTRS)

Morrison, Nancy D.

1995-01-01

This project began with the acquisition of short-wavelength, high-dispersion IUE spectra of selected late O- and early B-type stars that are near the main sequence in open clusters and associations. The profiles of the resonance lines of N(V), Si(IV), and C(IV) were studied, and we found that the C(IV) lines are the most sensitive indicators of mass loss (stellar winds) in stars of this type. The mass loss manifests itself as an extension of the short-wavelength absorption wing of the doublet, while there is no P Cygni-type emission on the long-wavelength side of the line profile. We investigated whether the short-wavelength extension could be caused by blended lines of other ionic species formed in the photosphere. Although blending is present and introduces uncertainty into the estimation of the precise location on the main sequence of the onset of the mass-loss signature, it is a crucial issue only in a few marginal cases. Mass loss certainly overwhelms blending in its influence on the spectrum between spectral types B0 and B1 (effective temperatures in the range 25,000-27,000 K). We defined a parameter called P(sub w), to describe the degree of asymmetry of the C(IV) resonance-line profile, and we studied the dependence of this parameter on the fundamental stellar parameters. For this purpose, we derived new estimates of the stellar T(eff) and log g from a non-LTE, line-blanketed model-atmosphere analysis of these stars (Grigsby, Morrison, and Anderson 1992). In order to estimate the stellar luminosities, we performed an exhaustive search of the literature for the most reliable available estimates of the distances of the clusters and associations to which the program stars belong. The dependence of P(sub w) on stellar temperature and luminosity is also studied.

Solar cells based on particulate structure of active layer: Investigation of light absorption by an ordered system of spherical submicron silicon particles

NASA Astrophysics Data System (ADS)

Miskevich, Alexander A.; Loiko, Valery A.

2015-12-01

Enhancement of the performance of photovoltaic cells through increasing light absorption due to optimization of an active layer is considered. The optimization consists in creation of particulate structure of active layer. The ordered monolayers and multilayers of submicron crystalline silicon (c-Si) spherical particles are examined. The quasicrystalline approximation (QCA) and the transfer matrix method (TMM) are used to calculate light absorption in the wavelength range from 0.28 μm to 1.12 μm. The integrated over the terrestial solar spectral irradiance "Global tilt" ASTM G173-03 absorption coefficient is calculated. In the wavelength range of small absorption index of c-Si (0.8-1.12 μm) the integral absorption coefficient of monolayer can be more than 20 times higher than the one of the plane-parallel plate of the equivalent volume of material. In the overall considered range (0.28-1.12 μm) the enhancement factor up to ~1.45 for individual monolayer is observed. Maximum value of the spectral absorption coefficient approaches unity for multilayers consisting of large amount of sparse monolayers of small particles. Multilayers with variable concentration and size of particles in the monolayer sequences are considered. Absorption increasing by such gradient multilayers as compared to the non-gradient ones is illustrated. The considered structures are promising for creation of high efficiency thin-film solar cells.

Effect of Sn addition on glassy Si-Te bulk sample

NASA Astrophysics Data System (ADS)

Babanna, Jagannatha K.; Roy, Diptoshi; Varma, Sreevidya G.; Asokan, Sundarrajan; Das, Chandasree

2018-05-01

Bulk Si20Te79Sn1 glass is prepared by melt-quenching method, amorphous nature of the as-quenched glass is confirmed by XRD. I-V characteristics reveals that Si20Te79Sn1 bulk sample exhibits threshold type electrical switching behavior. The thermal parameters such as crystallization temperature, glass transition temperature are obtained using differential scanning calorimetry. The crystalline peak study of the sample annealed at crystallization temperature for 2 hr shows that the Sn atom interact with Si or Te but do not interact with the Si-Te matrix in a greater extent and it forms a separate phase network individually.

Subunit Compositions of the RNA-Silencing Enzymes Pol IV and Pol V Reveal Their Origins as Specialized Forms of RNA Polymerase II

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ream, Thomas S.; Haag, J. R.; Wierzbicki, A. T.

2009-01-30

In addition to RNA polymerases I, II and III, which are multi-subunit RNA polymerases found in all eukaryotes, plants have catalytic subunits for two additional nuclear RNA polymerases, abbreviated as Pol IV and Pol V (formerly Pol IVa and Pol IVb, respectively). Pol IV and Pol V play non-redundant roles in siRNA-directed DNA methylation and gene silencing pathways.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.

Recently, the authors have demonstrated that annealing Si/SiO{sub 2}/Si structures in a hydrogen containing ambient introduces mobile H{sup +} ions into the buried SiO{sub 2} layer. Changes in the H{sup +} spatial distribution within the SiO{sub 2} layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO{sub 2}/Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO{sub 2} structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memorymore » that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO{sub 2}/Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties.« less

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

NASA Astrophysics Data System (ADS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Delivery of RNAi reagents in murine models of obesity and diabetes.

PubMed

Wilcox, Denise M; Yang, Ruojing; Morgan, Sherry J; Nguyen, Phong T; Voorbach, Martin J; Jung, Paul M; Haasch, Deanna L; Lin, Emily; Bush, Eugene N; Opgenorth, Terry J; Jacobson, Peer B; Collins, Christine A; Rondinone, Cristina M; Surowy, Terry; Landschulz, Katherine T

2006-11-29

RNA interference (RNAi) is an exciting new tool to effect acute in vivo knockdown of genes for pharmacological target validation. Testing the application of this technology to metabolic disease targets, three RNAi delivery methods were compared in two frequently utilized preclinical models of obesity and diabetes, the diet-induced obese (DIO) and B6.V-Lep/J (ob/ob) mouse. Intraperitoneal (i.p.) and high pressure hydrodynamic intravenous (i.v.) administration of naked siRNA, and low pressure i.v. administration of shRNA-expressing adenovirus were assessed for both safety and gene knockdown efficacy using constructs targeting cJun N-terminal kinase 1 (JNK1). Hydrodynamic delivery of siRNA lowered liver JNK1 protein levels 40% in DIO mice, but was accompanied by iatrogenic liver damage. The ob/ob model proved even more intolerant of this technique, with hydrodynamic delivery resulting in severe liver damage and death of most animals. While well-tolerated, i.p. injections of siRNA in DIO mice did not result in any knockdown or phenotypic changes in the mice. On the other hand, i.v. injected adenovirus expressing shRNA potently reduced expression of JNK1 in vivo by 95% without liver toxicity. In conclusion, i.p. and hydrodynamic injections of siRNA were ineffective and/or inappropriate for in vivo gene targeting in DIO and ob/ob mice, while adenovirus-mediated delivery of shRNA provided a relatively benign and effective method for exploring liver target silencing.

Astragaloside-IV Alleviates Heat-Induced Inflammation by Inhibiting Endoplasmic Reticulum Stress and Autophagy.

PubMed

Dong, Zhiwei; Zhou, Jian; Zhang, Ying; Chen, Yajie; Yang, Zichen; Huang, Guangtao; Chen, Yu; Yuan, Zhiqiang; Peng, Yizhi; Cao, Tongtong

2017-01-01

Thermal injury is the main cause of pulmonary disease in stroke after burn and can be life threatening. Heat-induced inflammation is an important factor that triggers a series of induces pathological changes. However, this mechanism underlying heat-induced inflammation in thermal inhalation injury remains unclear. Studies have revealed that astragaloside-IV (AS-IV), a natural compound extracted from Astragalus membranaceus, has protective effects in inflammatory diseases. Here, we investigated whether the protective effects of AS-IV occur because of the suppression of heat-induced endoplasmic reticulum (ER) stress and excessive autophagy Methods: AS-IV was administered to Wistar rats after thermal inhalation injury and 16HBE140-cells were treated with AS-IV. TNF-α, IL-6, and IL-8 levels were determined by ELISA and real-time PCR. ER stress and autophagy were determined by western blot. Autophagic flux was measured by recording the fluorescence emission of the fusion protein mRFP-GFP-LC3 by dynamic live-cell imaging. AS-IV had protective effects against heat-induced reactive oxygen species production and attenuated ER stress. AS IV alleviated heat-induced excessive autophagy in vitro and in vivo. Excessive autophagy was attenuated by the PERK inhibitor GSK2656157 and eIF2α siRNA, suggesting that heat stress-induced autophagy can activate the PERK-eIF2α pathway. Beclin 1 and Atg5 siRNAs inhibited the upregulation of the inflammatory cytokines TNF-α, IL-6, and IL-8 after heat exposure. Thus, AS-IV may attenuate inflammatory responses by disrupting the crosstalk between autophagy and the PERK-eIF2α pathway and may be an ideal agent for treating inflammatory pulmonary diseases. © 2017 The Author(s). Published by S. Karger AG, Basel.

Absorption enhancement in non-coplanar silver nanowire networks

NASA Astrophysics Data System (ADS)

He, Zhihui; Zhou, Zhiping; Ren, Xincheng; Bai, Shaomin; Li, Hongjian; Cao, Dongmei; Li, Gang; Cao, Guangtao

2018-07-01

We propose non-coplanar silver nanowire (AgNW) networks placed on a SiO2 layer. A notable absorption peak is observed in our proposed structure, and compared with the absorption of coplanar periodic AgNW networks and periodic AgNW gratings, the absorption performance of the non-coplanar AgNW networks demonstrates obvious advantages. It could be determined that the absorption ratio in this non-coplanar AgNW networks can reach 95%. In addition, several parameters that have important effects on the absorption of the non-coplanar AgNW networks are discussed in detail. Our research may provide guidance for the fundamental exploration of plasmonic absorption device applications.

Tunable Nanoantennas for Surface Enhanced Infrared Absorption Spectroscopy by Colloidal Lithography and Post-Fabrication Etching

NASA Astrophysics Data System (ADS)

Chen, Kai; Duy Dao, Thang; Nagao, Tadaaki

2017-03-01

We fabricated large-area metallic (Al and Au) nanoantenna arrays on Si substrates using cost-effective colloidal lithography with different micrometer-sized polystyrene spheres. Variation of the sphere size leads to tunable plasmon resonances in the middle infrared (MIR) range. The enhanced near-fields allow us to detect the surface phonon polaritons in the natural SiO2 thin layers. We demonstrated further tuning capability of the resonances by employing dry etching of the Si substrates with the nanoantennas acting as the etching masks. The effective refractive index of the nanoantenna surroundings is efficiently decreased giving rise to blueshifts of the resonances. In addition, partial removal of the Si substrates elevates the nanoantennas from the high-refractive-index substrates making more enhanced near-fields accessible for molecular sensing applications as demonstrated here with surface-enhanced infrared absorption (SEIRA) spectroscopy for a thin polymer film. We also directly compared the plasmonic enhancement from the Al and Au nanoantenna arrays.

Mn K-Edge X-ray Absorption Studies of Oxo- and Hydroxo-manganese(IV) Complexes: Experimental and Theoretical Insights into Pre-Edge Properties

PubMed Central

2015-01-01

Mn K-edge X-ray absorption spectroscopy (XAS) was used to gain insights into the geometric and electronic structures of [MnII(Cl)2(Me2EBC)], [MnIV(OH)2(Me2EBC)]2+, and [MnIV(O)(OH)(Me2EBC)]+, which are all supported by the tetradentate, macrocyclic Me2EBC ligand (Me2EBC = 4,11-dimethyl-1,4,8,11-tetraazabicyclo[6.6.2]hexadecane). Analysis of extended X-ray absorption fine structure (EXAFS) data for [MnIV(O)(OH)(Me2EBC)]+ revealed Mn–O scatterers at 1.71 and 1.84 Å and Mn–N scatterers at 2.11 Å, providing the first unambiguous support for the formulation of this species as an oxohydroxomanganese(IV) adduct. EXAFS-determined structural parameters for [MnII(Cl)2(Me2EBC)] and [MnIV(OH)2(Me2EBC)]2+ are consistent with previously reported crystal structures. The Mn pre-edge energies and intensities of these complexes were examined within the context of data for other oxo- and hydroxomanganese(IV) adducts, and time-dependent density functional theory (TD-DFT) computations were used to predict pre-edge properties for all compounds considered. This combined experimental and computational analysis revealed a correlation between the Mn–O(H) distances and pre-edge peak areas of MnIV=O and MnIV–OH complexes, but this trend was strongly modulated by the MnIV coordination geometry. Mn 3d-4p mixing, which primarily accounts for the pre-edge intensities, is not solely a function of the Mn–O(H) bond length; the coordination geometry also has a large effect on the distribution of pre-edge intensity. For tetragonal MnIV=O centers, more than 90% of the pre-edge intensity comes from excitations to the Mn=O σ* MO. Trigonal bipyramidal oxomanganese(IV) centers likewise feature excitations to the Mn=O σ* molecular orbital (MO) but also show intense transitions to 3dx2–y2 and 3dxy MOs because of enhanced 3d-4px,y mixing. This gives rise to a broader pre-edge feature for trigonal MnIV=O adducts. These results underscore the importance of reporting experimental pre-edge areas rather than peak heights. Finally, the TD-DFT method was applied to understand the pre-edge properties of a recently reported S = 1 MnV=O adduct; these findings are discussed within the context of previous examinations of oxomanganese(V) complexes. PMID:24901026

The Amazing COS FUV (1320 - 1460 A) Spectrum of (lambda) Vel (K4Ib-II)

NASA Technical Reports Server (NTRS)

Carpenter, Kenneth

2010-01-01

The FUV spectrum (1320-1460 A) of the K4 lb-11 supergiant (lambda) Vel was observed with the Cosmic Origins Spectrograph (COS) on HST, as part of the Ayres and Redfield Cycle 17 SNAP program "SNAPing Coronal Iron". This spectrum covers a region not previously recorded in (lambda) Vel at high resolution and, in a mere 20 minutes of exposure, reveals a treasure trove of information. It shows a wide variety of strong emission lines, superposed on a bright continuum, with contributions from both atomic and molecular species. Multiple absorptions, including numerous Ni II and Fe II lines, are visible over this continuum, which is likely generated in the chromosphere of the star. Evidence of the stellar wind is seen in the P Cygni profiles of the CII lines near 1335 A and the results of fluorescence processes are visible throughout the region. The spectrum has remarkable similarities to that of (alpha) Boo (K1.5 III), but significant differences as well, including substantial FUV continuum emission, reminiscent of the M2 Iab supergiant (alpha) Ori, but minus the CO fundamental absorption bands seen in the spectrum of the latter star. However, fluoresced CO emission is present, as in the K-giant stars (alpha) Boo and (alpha) Tau (K5 III). The presence of hot plasma in the atmosphere of the star, indicated by previous GHRS observations of Si III] and C III] lines near 1900 A and FUSE observations of O VI 1032 A, is further confirmed by the detection in this COS spectrum of the Si IV UV 1 lines near 1400 A, though both lines are contaminated by overlying fluorescent H2 emission. We present the details of this spectrum, in comparison with stars of similar temperature or luminosity and discuss the implications for the structure of, and the radiative processes active in, the outer atmospheres of these stars.

Strain-Engineered Nanomembrane Substrates for Si/SiGe Heterostructures

NASA Astrophysics Data System (ADS)

Sookchoo, Pornsatit

For Group IV materials, including silicon, germanium, and their alloys, although they are most widely used in the electronics industry, the development of photonic devices is hindered by indirect band gaps and large lattice mismatches. Thus, any heterostructures involving Si and Ge (4.17% lattice mismatch) are subject to plastic relaxation by dislocation formation in the heterolayers. These defects make many devices impossible and at minimum degrade the performance of those that are possible. Fabrication using elastic strain engineering in Si/SiGe nanomembranes (NMs) is an approach that is showing promise to overcome this limitation. A key advantage of such NM substrates over conventional bulk substrates is that they are relaxed elastically and therefore free of dislocations that occur in the conventional fabrication of SiGe substrates, which are transferred to the epilayers and roughen film interfaces. In this thesis, I use the strain engineering of NMs or NM stacks to fabricate substrates for the epitaxial growth of many repeating units of Si/SiGe heterostructure, known as a 'superlattice', by the elastic strain sharing of a few periods of the repeating unit of Si/SiGe heterolayers or a Si/SiGe/Si tri-layer structure. In both cases, the process begins with the epitaxial growth of Si/SiGe heterolayers on silicon-on-insulator (SOI), where each layer thickness is designed to stay below its kinetic critical thickness for the formation of dislocations. The heterostructure NMs are then released by etching of the SiO2 sacrificial layer in hydrofluoric acid. The resulting freestanding NMs are elastically relaxed by the sharing of strain between the heterolayers. The NMs can be bonded in-place to their host substrate or transferred to another host substrate for the subsequent growth of many periods of superlattice film. The magnitude of strain sharing in these freestanding NMs is influenced by their layer thicknesses and layer compositions. As illustrated in this dissertation, strain-engineering of such NMs can provide the enabling basis for improved Group IV optoelectronic devices.

Amide proton transfer imaging of adult diffuse gliomas: correlation with histopathological grades.

PubMed

Togao, Osamu; Yoshiura, Takashi; Keupp, Jochen; Hiwatashi, Akio; Yamashita, Koji; Kikuchi, Kazufumi; Suzuki, Yuriko; Suzuki, Satoshi O; Iwaki, Toru; Hata, Nobuhiro; Mizoguchi, Masahiro; Yoshimoto, Koji; Sagiyama, Koji; Takahashi, Masaya; Honda, Hiroshi

2014-03-01

Amide proton transfer (APT) imaging is a novel molecular MRI technique to detect endogenous mobile proteins and peptides through chemical exchange saturation transfer. We prospectively assessed the usefulness of APT imaging in predicting the histological grade of adult diffuse gliomas. Thirty-six consecutive patients with histopathologically proven diffuse glioma (48.1 ± 14.7 y old, 16 males and 20 females) were included in the study. APT MRI was conducted on a 3T clinical scanner and was obtained with 2 s saturation at 25 saturation frequency offsets ω = -6 to +6 ppm (step 0.5 ppm). δB0 maps were acquired separately for a point-by-point δB0 correction. APT signal intensity (SI) was defined as magnetization transfer asymmetry at 3.5 ppm: magnetization transfer ratio (MTR)asym = (S[-3.5 ppm] - S[+3.5 ppm])/S0. Regions of interest were carefully placed by 2 neuroradiologists in solid parts within brain tumors. The APT SI was compared with World Health Organization grade, Ki-67 labeling index (LI), and cell density. The mean APT SI values were 2.1 ± 0.4% in grade II gliomas (n = 8), 3.2 ± 0.9% in grade III gliomas (n = 10), and 4.1 ± 1.0% in grade IV gliomas (n = 18). Significant differences in APT intensity were observed between grades II and III (P < .05) and grades III and IV (P < .05), as well as between grades II and IV (P < .001). There were positive correlations between APT SI and Ki-67 LI (P = .01, R = 0.43) and between APT SI and cell density (P < .05, R = 0.38). The gliomas with microscopic necrosis showed higher APT SI than those without necrosis (P < .001). APT imaging can predict the histopathological grades of adult diffuse gliomas.

Effects of prenatal cocaine exposure on social development in mice.

PubMed

Kabir, Zeeba D; Kennedy, Bruce; Katzman, Aaron; Lahvis, Garet P; Kosofsky, Barry E

2014-01-01

Prenatal cocaine exposure (PCE) in humans and animals has been shown to impair social development. Molecules that mediate synaptic plasticity and learning in the medial prefrontal cortex (mPFC), specifically brain-derived neurotrophic factor (BDNF) and its downstream signaling molecule, early growth response protein 1 (egr1), have been shown to affect the regulation of social interactions (SI). In this study we determined the effects of PCE on SI and the corresponding ultrasonic vocalizations (USVs) in developing mice. Furthermore, we studied the PCE-induced changes in the constitutive expression of BDNF, egr1 and their transcriptional regulators in the mPFC as a possible molecular mechanism mediating the altered SI. In prenatal cocaine-exposed (PCOC) mice we identified increased SI and USV production at postnatal day (PD) 25, and increased SI but not USVs at PD35. By PD45 the expression of both social behaviors normalized in PCOC mice. At the molecular level, we found increased BDNF exon IV and egr1 mRNA in the mPFC of PCOC mice at PD30 that normalized by PD45. This was concurrent with increased EGR1 protein in the mPFC of PCOC mice at PD30, suggesting a role of egr1 in the enhanced SI observed in juvenile PCOC mice. Additionally, by measuring the association of acetylation of histone 3 at lysine residues 9 and 14 (acH3K9,14) and MeCP2 at the promoters of BDNF exons I and IV and egr1, our results provide evidence of promoter-specific alterations in the mPFC of PCOC juvenile mice, with increased association of acH3K9,14 only at the BDNF exon IV promoter. These results identify a potential PCE-induced molecular alteration as the underlying neurobiological mechanism mediating the altered social development in juvenile mice. © 2014 S. Karger AG, Basel.

Enhanced absorption with quantum dots, metal nanoparticles, and 2D materials

NASA Astrophysics Data System (ADS)

Simsek, Ergun; Mukherjee, Bablu; Guchhait, Asim; Chan, Yin Thai

2016-03-01

We fabricate and characterize mono- and few- layers of MoS2 and WSe2 on glass and SiO2/Si substrates. PbS quantum dots and/or Au nanoparticles are deposited on the fabricated thin metal dichalcogenide films by controlled drop casting and electron beam evaporation techniques. The reflection spectra of the fabricated structures are measured with a spatially resolved reflectometry setup. Both experimental and numerical results show that surface functionalization with metal nanoparticles can enhance atomically thin transition metal dichalcogenides' absorption and scattering capabilities, however semiconducting quantum dots do not create such effect.

Evaluating Possible Heating Mechanisms Using the Transition Region Line Profiles of Late-Type Stars

NASA Technical Reports Server (NTRS)

Wood, Brian E.; Linsky, Jeffrey L.; Ayres, Thomas R.

1997-01-01

Our analysis of high-resolution Goddard High-Resolution Spectrograph (GHRS) spectra of late-type stars shows that the Si IV and C IV lines formed near 10(exp 5) K can be decomposed into the sum of two Gaussians, a broad component and a narrow component. We find that the flux contribution of the broad components is correlated with both the C IV and X-ray surface fluxes. For main-sequence stars, the widths of the narrow components suggest subsonic nonthermal velocities, and there appears to be a tight correlation between these nonthermal velocities and stellar surface gravity [xi(sub nc) varies as g(sup (-.68 +/-.07))]. For evolved stars with lower surface gravities, the nonthermal velocities suggested by the narrow components are at or just above the sound speed. Nonthermal velocities computed from the widths of the broad components are always highly supersonic. We propose that the broad components are diagnostics for microflare heating. Turbulent dissipation and Alfven waves are both viable candidates for the narrow component heating mechanism. A solar analog for the broad components might be the 'explosive events' detected by the High-Resolution Telescope and Spectrograph (HRTS) experiment. The broad component we observe for the Si IV lambda 1394 line of alpha Cen A, a star that is nearly identical to the Sun, has a FWHM of 109 +/- 10 km/s and is blueshifted by 9 +/- 3 km/s relative to the narrow component. Both of these properties are consistent with the properties of the solar explosive events. However, the alpha Cen A broad component accounts for 25% +/- 4% of the total Si IV line flux, while solar explosive events are currently thought to account for no more than 5% of the Sun's total transition region emission. This discrepancy must be resolved before the connection between broad components and explosive events can be positively established. In addition to our analysis of the Si IV and C IV lines of many stars, we also provide a more thorough analysis of all of the available GHRS data for alpha Cen A (G2 V) and alpha Cen B (K1 V). We find that the transition region lines of both stars have redshifts almost identical to those observed on the Sun: showing an increase with line formation temperature up to about log T = 5.2 and then a rapid decrease. Using the O IV] lines as density diagnostics, we compute electron densities of log n(sub e) = 9.65 +/- 0.20 and log n(sub e) = 9.50 +/- 0.30 for alpha Cen A and alpha Cen B, respectively.

GaN High Power Electronics

DTIC Science & Technology

2011-02-01

ARL) does not yet match the best work being done in Japan, the reasons for this have been identified as the relatively large carbon background...hand, SiC is a compound with a fixed composition. Second phases are formed, as opposed to solid solutions, when the group IV elements, carbon (C...Si, or germanium (Ge), are added to it. In order to form a 2DEG, a dielectric, usually silicon dioxide (SiO2), has to be grown or deposited on the

Photovoltaic Prospection in South Tamaulipas

NASA Astrophysics Data System (ADS)

Saleme Vila, S.; Rivas, D.; Ortega Izaguirre, R.

2015-12-01

Commercial monocrystalline silicon (c-Si), polycrystalline silicon (p-Si) and amorphous silicon (a-Si) photovoltaic (PV) panels are tested on real conditions in order to identify which of the aforementioned PV panels present the best performance in the city of Altamira, Tamaulipas (northeastern Mexico) and to evaluate the impact of the city's climatic conditions over the electrical characteristics and power generation of the aforementioned PV panels. In situ direct solar irradiance and current-voltage characteristics (I-V) of each PV panel were taken from Monday to Friday at 11:00, 13:00 and 15:00 hours (GMT-6) with 3 repeats from 08/04/2014 to 07/31/2015. Also, daylong in situ direct solar irradiance, panel temperature, and I-V characteristics were taken from 8:00 to 20:30 hours with a 30-minute interval in synchrony with National Polytechnic Institute-owned CICATA-I meteorological station in order to cross-reference the experimental data with the station's air temperature, specific humidity and global solar irradiance data. Up to June 2015, c-Si panel presented the best performance on real conditions with mean max power loss of 49% compared to the reference max power value followed by the p-Si with 54% mean max power loss and the a-Si panel with a 73% mean max power loss. The number of cloudy days, electrical resistance due to panel materials nature and meteorological impact are further discussed.

C IV absorption-line variability in X-ray-bright broad absorption-line quasi-stellar objects

NASA Astrophysics Data System (ADS)

Joshi, Ravi; Chand, Hum; Srianand, Raghunathan; Majumdar, Jhilik

2014-07-01

We report the kinematic shift and strength variability of the C IV broad absorption-line (BAL) trough in two high-ionization X-ray-bright quasi-stellar objects (QSOs): SDSS J085551+375752 (at zem ˜ 1.936) and SDSS J091127+055054 (at zem ˜ 2.793). Both these QSOs have shown a combination of profile shifts and the appearance and disappearance of absorption components belonging to a single BAL trough. The observed average kinematic shift of the whole BAL profile resulted in an average deceleration of ˜-0.7 ± 0.1, -2.0 ± 0.1 cm s-2 over rest-frame time-spans of 3.11 and 2.34 yr for SDSS J085551+375752 and SDSS J091127+055054, respectively. To our knowledge, these are the largest kinematic shifts known, exceeding by factors of about 2.8 and 7.8 the highest deceleration reported in the literature; this makes both objects potential candidates to investigate outflows using multiwavelength monitoring of their line and continuum variability. We explore various possible mechanisms to understand the observed profile variations. Outflow models involving many small self-shielded clouds, probably moving in a curved path, provide the simplest explanation for the C IV BAL strength and velocity variations, along with the X-ray-bright nature of these sources.

RE-VISIT OF HST FUV OBSERVATIONS OF THE HOT-JUPITER SYSTEM HD 209458: NO Si iii DETECTION AND THE NEED FOR COS TRANSIT OBSERVATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ballester, G. E.; Ben-Jaffel, L., E-mail: gilda@lpl.arizona.edu, E-mail: bjaffel@iap.fr

2015-05-10

The discovery of O i atoms and C ii ions in the upper atmosphere of HD 209458b, made with the Hubble Space Telescope Imaging Spectrograph (STIS) using the G140L grating, showed that these heavy species fill an area comparable to the planet’s Roche lobe. The derived ∼10% transit absorption depths require super-thermal processes and/or supersolar abundances. From subsequent Cosmic Origins Spectrograph (COS) observations, C ii absorption was reported with tentative velocity signatures, and absorption by Si iii ions was also claimed in disagreement with a negative STIS G140L detection. Here, we revisit the COS data set showing a severe limitationmore » in the published results from having contrasted the in-transit spectrum against a stellar spectrum averaged from separate observations, at planetary phases 0.27, 0.72, and 0.49. We find variable stellar Si iii and C ii emissions that were significantly depressed not only during transit but also at phase 0.27 compared to phases 0.72 and 0.49. Their respective off-transit 7.5% and 3.1% flux variations are large compared to their reported 8.2 ± 1.4% and 7.8 ± 1.3% transit absorptions. Significant variations also appear in the stellar line shapes, questioning reported velocity signatures. We furthermore present archive STIS G140M transit data consistent with no Si iii absorption, with a negative result of 1.7 ± 18.7 including ∼15% variability. Silicon may still be present at lower ionization states, in parallel with the recent detection of extended magnesium, as Mg i atoms. In this frame, the firm detection of O i and C ii implying solar or supersolar abundances contradicts the recent inference of potential 20–125× subsolar metallicity for HD 209458b.« less

Structure of nanocrystalline calcium silicate hydrates: insights from X-ray diffraction, synchrotron X-ray absorption and nuclear magnetic resonance.

PubMed

Grangeon, Sylvain; Claret, Francis; Roosz, Cédric; Sato, Tsutomu; Gaboreau, Stéphane; Linard, Yannick

2016-06-01

The structure of nanocrystalline calcium silicate hydrates (C-S-H) having Ca/Si ratios ranging between 0.57 ± 0.05 and 1.47 ± 0.04 was studied using an electron probe micro-analyser, powder X-ray diffraction, 29 Si magic angle spinning NMR, and Fourier-transform infrared and synchrotron X-ray absorption spectroscopies. All samples can be described as nanocrystalline and defective tobermorite. At low Ca/Si ratio, the Si chains are defect free and the Si Q 3 and Q 2 environments account, respectively, for up to 40.2 ± 1.5% and 55.6 ± 3.0% of the total Si, with part of the Q 3 Si being attributable to remnants of the synthesis reactant. As the Ca/Si ratio increases up to 0.87 ± 0.02, the Si Q 3 environment decreases down to 0 and is preferentially replaced by the Q 2 environment, which reaches 87.9 ± 2.0%. At higher ratios, Q 2 decreases down to 32.0 ± 7.6% for Ca/Si = 1.38 ± 0.03 and is replaced by the Q 1 environment, which peaks at 68.1 ± 3.8%. The combination of X-ray diffraction and NMR allowed capturing the depolymerization of Si chains as well as a two-step variation in the layer-to-layer distance. This latter first increases from ∼11.3 Å (for samples having a Ca/Si ratio <∼0.6) up to 12.25 Å at Ca/Si = 0.87 ± 0.02, probably as a result of a weaker layer-to-layer connectivity, and then decreases down to 11 Å when the Ca/Si ratio reaches 1.38 ± 0.03. The decrease in layer-to-layer distance results from the incorporation of interlayer Ca that may form a Ca(OH) 2 -like structure, nanocrystalline and intermixed with C-S-H layers, at high Ca/Si ratios.

Young's modulus and internal friction of the SiC/Si biomorphic composite based on the sapele wood precursor

NASA Astrophysics Data System (ADS)

Kardashev, B. K.; Orlova, T. S.; Smirnov, B. I.; de Arellano-Lopez, A. R.; Martinez-Fernandez, J.

2009-04-01

The effect of the vibrational strain amplitude on the Young’s modulus and ultrasound absorption (internal friction) of a SiC/Si biomorphic composite prepared by pyrolysis of sapele wood followed by infiltration of silicon were investigated. The studies were conducted in air and in vacuum by the acoustic resonance method with the use of a composite vibrator in longitudinal vibrations at frequencies of about 100 kHz. Measurements performed on sapele wood-based bio-SiC/Si samples revealed a substantial effect of adsorption-desorption of molecules contained in air on the effective elasticity modulus and elastic vibration decrement. Microplastic characteristics of the SiC/Si composites prepared from wood of different tree species were compared.

Abundances of O, Mg, S, Cr, Mn, Ti, NI and Zn from absorption lines of neutral gas in the Large Magellanic Cloud in front of R136

NASA Astrophysics Data System (ADS)

de Boer, K. S.; Fitzpatrick, E. L.; Savage, B. D.

1985-11-01

The authors have searched six high-dispersion IUE spectra of R136 for weak absorption lines of C I, O I, Mg I, Mg II, Si I, Si II, P I, Cl I, Cr II, Mn II, Fe I, Ni II, Zn II, CO and C2. The absorption detected is from neutral gas in front of the 30 Doradus H II region. For the first time abundances of Mg, Cr, Mn, Ti, Ni, and Zn are determined for an extragalactic system. The LMC abundances from the absorption lines are a factor of 2 to 3 below those of the Milky Way, in agreement with general results from emission line studies. The density and temperature of the neutral gas are estimates from the observed excitation and ionization at approximately n(H) = 300 cm-3 and T = 100K, implying a gas pressure of about 3×104cm-3K.

Wind Variability of B Supergiants. No. 2; The Two-component Stellar Wind of gamma Arae

NASA Technical Reports Server (NTRS)

Prinja, R. K.; Massa, D.; Fullerton, A. W.; Howarth, I. D.; Pontefract, M.

1996-01-01

The stellar wind of the rapidly rotating early-B supergiant, gamma Ara, is studied using time series, high-resolution IUE spectroscopy secured over approx. 6 days in 1993 March. Results are presented based on an analysis of several line species, including N(N), C(IV), Si(IV), Si(III), C(II), and Al(III). The wind of this star is grossly structured, with evidence for latitude-dependent mass loss which reflects the role of rapid rotation. Independent, co-existing time variable features are identified at low-velocity (redward of approx. -750 km/s) and at higher-speeds extending to approx. -1500 km/s. The interface between these structures is 'defined' by the appearance of a discrete absorption component which is extremely sharp (in velocity space). The central velocity of this 'Super DAC' changes only gradually, over several days, between approx. -400 and -750 km/s in most of the ions. However, its location is shifted redward by almost 400 km/s in Al(III) and C(II), indicating that the physical structure giving rise to this feature has a substantial velocity and ionization jump. Constraints on the relative ionization properties of the wind structures are discussed, together with results based on SEI line-profile-fitting methods. The overall wind activity in gamma Ara exhibits a clear ion dependence, such that low-speed features are promoted in low-ionization species, including Al(III), C(II), and Si(III). We also highlight that - in contrast to most OB stars - there are substantial differences in the epoch-to-epoch time-averaged wind profiles of gamma Ara. We interpret the results in terms of a two-component wind model for gamma Ara, with an equatorially compressed low ionization region, and a high speed, higher-ionization polar outflow. This picture is discussed in the context of the predicted bi-stability mechanism for line-driven winds in rapidly rotating early-B type stars, and the formation of compressed wind regions in rapidly rotating hot stars. The apparent absence of a substantial shift in the wind ionization mixture of gamma Ara, and the normal nature of its photospheric spectrum, suggests wind-compression as the likely dominant cause for the observed equatorial density enhancements.

Synthetic IRIS spectra of the solar transition region: Effect of high-energy tails

NASA Astrophysics Data System (ADS)

Dzifčáková, E.; Vocks, C.; Dudík, J.

2017-06-01

Aims: The solar transition region satisfies the conditions for presence of non-Maxwellian electron energy distributions with high-energy tails at energies corresponding to the ionization potentials of many ions emitting in the extreme-ultraviolet and ultraviolet portions of the spectrum. Methods: We calculate the synthetic Si iv, O iv, and S iv spectra in the far ultraviolet channel of the Interface Region Imaging Spectrograph (IRIS). Ionization, recombination, and excitation rates are obtained by integration of the cross-sections or their approximations over the model electron distributions considering particle propagation from the hotter corona. Results: The ionization rates are significantly affected by the presence of high-energy tails. This leads to the peaks of the relative abundance of individual ions to be broadened with pronounced low-temperature shoulders. As a result, the contribution functions of individual lines observable by IRIS also exhibit low-temperature shoulders, or their peaks are shifted to temperatures an order of magnitude lower than for the Maxwellian distribution. The integrated emergent spectra can show enhancements of Si iv compared to O iv by more than a factor of two. Conclusions: The high-energy particles can have significant impact on the emergent spectra and their presence needs to be considered even in situations without strong local acceleration.

Photoactivated processes in optical fibers: generation and conversion mechanisms of twofold coordinated Si and Ge atoms

NASA Astrophysics Data System (ADS)

Giacomazzi, Luigi; Martin-Samos, L.; Boukenter, A.; Ouerdane, Y.; Girard, S.; Alessi, A.; de Gironcoli, S.; Richard, N.

2017-05-01

In this work we present an extensive investigation of nanoscale physical phenomena related to oxygen-deficient centers (ODCs) in silica and Ge-doped silica by means of first-principles calculations, including nudged-elastic band, electron paramagnetic resonance parameters calculations, and many-body perturbation theory (GW and Bethe-Salpeter equation) techniques. We show that by neutralizing positively charged oxygen monovacancies we can obtain model structures of twofold Si and Ge defects of which the calculated absorption spectra and singlet-to-triplet transitions are in excellent agreement with the experimental optical absorption and photo-luminescence data. In particular we provide an exhaustive analysis of the main exciton peaks related to the presence of twofold defects including long-range correlation effects. By calculating the reaction pathways and energy barriers necessary for the interconversion, we advance a double precursory origin of the {E}α \\prime and Ge(2) centers as due to the ionization of neutral oxygen monovacancies (Si-Si and Ge-Si dimers) and as due to the ionization of twofold Si and Ge defects. Furthermore two distinct structural conversion mechanisms are found to occur between the neutral oxygen monovacancy and the twofold Si (and Ge) atom configurations. Such conversion mechanisms allow to explain the radiation induced generation of the ODC(II) centers, their photobleaching, and also their generation during the drawing of optical fibers.

Synthesis of Ag{sub 9}(SiO{sub 4}){sub 2}NO{sub 3} through a reactive flux method and its visible-light photocatalytic performances

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Xianglin; Wang, Zeyan, E-mail: wangzeyan@sdu.edu.cn, E-mail: bbhuang@sdu.edu.cn; Huang, Baibiao, E-mail: wangzeyan@sdu.edu.cn, E-mail: bbhuang@sdu.edu.cn

2015-10-01

Ag{sub 9}(SiO{sub 4}){sub 2}NO{sub 3} was prepared by a reactive flux method. The structures, morphologies, and light absorption properties were investigated. Owing to the polar crystal structure, an internal electric field can be formed inside the material, which can facilitate the photogenerated charge separation during the photocatalytic process. Based on both the wide light absorption spectra and high charge separation efficiency originated from the polarized internal electric field, Ag{sub 9}(SiO{sub 4}){sub 2}NO{sub 3} exhibit higher efficiency over Ag{sub 3}PO{sub 4} during the degradation of organic dyes under visible light irradiation, which is expected to be a potential material for solarmore » energy harvest and conversion.« less

Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy

DOE PAGES

Unuigbe, David M.; Harting, Margit; Jonah, Emmanuel O.; ...

2017-08-21

The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High-resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)- and (100)-oriented planes which stabilizes against further oxidation of the particles. X-ray absorption spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) measurements at the O 1s-edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milledmore » for different times. XANES results reveal the presence of the +4 (SiO 2) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2pXPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub-oxide, +1 (Si 2O), +2 (SiO) and +3 (Si 2O 3), states are present. The analysis of the change in the sub-oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.« less

Photoacoustic emission from Au nanoparticles arrayed on thermal insulation layer.

PubMed

Namura, Kyoko; Suzuki, Motofumi; Nakajima, Kaoru; Kimura, Kenji

2013-04-08

Efficient photoacoustic emission from Au nanoparticles on a porous SiO(2) layer was investigated experimentally and theoretically. The Au nanoparticle arrays/porous SiO(2)/SiO(2)/Ag mirror sandwiches, namely, local plasmon resonators, were prepared by dynamic oblique deposition (DOD). Photoacoustic measurements were performed on the local plasmon resonators, whose optical absorption was varied from 0.03 (3%) to 0.95 by varying the thickness of the dielectric SiO(2) layer. The sample with high absorption (0.95) emitted a sound that was eight times stronger than that emitted by graphite (0.94) and three times stronger than that emitted by the sample without the porous SiO(2) layer (0.93). The contribution of the porous SiO(2) layer to the efficient photoacoustic emission was analyzed by means of a numerical method based on a one-dimensional heat transfer model. The result suggested that the low thermal conductivity of the underlying porous layer reduces the amount of heat escaping from the substrate and contributes to the efficient photoacoustic emission from Au nanoparticle arrays. Because both the thermal conductivity and the spatial distribution of the heat generation can be controlled by DOD, the local plasmon resonators produced by DOD are suitable for the spatio-temporal modulation of the local temperature.

RNAi-mediated silencing of hepatic Alas1 effectively prevents and treats the induced acute attacks in acute intermittent porphyria mice.

PubMed

Yasuda, Makiko; Gan, Lin; Chen, Brenden; Kadirvel, Senkottuvelan; Yu, Chunli; Phillips, John D; New, Maria I; Liebow, Abigail; Fitzgerald, Kevin; Querbes, William; Desnick, Robert J

2014-05-27

The acute hepatic porphyrias are inherited disorders of heme biosynthesis characterized by life-threatening acute neurovisceral attacks. Factors that induce the expression of hepatic 5-aminolevulinic acid synthase 1 (ALAS1) result in the accumulation of the neurotoxic porphyrin precursors 5-aminolevulinic acid (ALA) and porphobilinogen (PBG), which recent studies indicate are primarily responsible for the acute attacks. Current treatment of these attacks involves i.v. administration of hemin, but a faster-acting, more effective, and safer therapy is needed. Here, we describe preclinical studies of liver-directed small interfering RNAs (siRNAs) targeting Alas1 (Alas1-siRNAs) in a mouse model of acute intermittent porphyria, the most common acute hepatic porphyria. A single i.v. dose of Alas1-siRNA prevented the phenobarbital-induced biochemical acute attacks for approximately 2 wk. Injection of Alas1-siRNA during an induced acute attack significantly decreased plasma ALA and PBG levels within 8 h, more rapidly and effectively than a single hemin infusion. Alas1-siRNA was well tolerated and a therapeutic dose did not cause hepatic heme deficiency. These studies provide proof-of-concept for the clinical development of RNA interference therapy for the prevention and treatment of the acute attacks of the acute hepatic porphyrias.

Synthesis of SiC nanoparticles by SHG 532 nm Nd:YAG laser ablation of silicon in ethanol

NASA Astrophysics Data System (ADS)

Khashan, Khawla S.; Ismail, Raid A.; Mahdi, Rana O.

2018-06-01

In this work, colloidal spherical nanoparticles NPs of silicon carbide SiC have been synthesized using second harmonic generation 532 nm Nd:YAG laser ablation of silicon target dipped in ethanol solution at various laser fluences (1.5-5) J/cm2. X-Ray diffraction XRD, scanning electron microscopy SEM, transmission electron microscope TEM, Fourier transformed infrared spectroscopy FT-IR, Raman spectroscopy, photoluminescence PL spectroscopy, and UV-Vis absorption were employed to examine the structural, chemical and optical properties of SiC NPs. XRD results showed that all synthesised SiC nanoparticles are crystalline in nature and have hexagonal structure with preferred orientation along (103) plane. Raman investigation showed three characteristic peaks 764,786 and 954 cm-1, which are indexing to transverse optic TO phonon mode and longitudinal optic LO phonon mode of 4H-SiC structure. The optical absorption data showed that the values of optical energy gap of SiC nanoparticles prepared at 1.5 J/cm2 was 3.6 eV and was 3.85 eV for SiC synthesised at 5 J/cm2. SEM investigations confirmed that the nanoparticles synthesised at 5 J/cm2 are agglomerated to form larger particles. TEM measurements showed that SiC particles prepared at 1.5 J/cm2 have spherical shape with average size of 25 nm, while the particles prepared at 5 J/cm2 have an average size of 55 nm.

Structure evolution and electrical transport property of Si nanowire

NASA Astrophysics Data System (ADS)

Wang, Y.; Li, Q. Q.; Dong, J. C.; He, Y. Z.; Li, H.

2015-02-01

Various optimized Si and its alloy nanowires, from a monoatomic chain to helical and multishell coaxial cylinder, have been obtained. Results reveal that the structure of the Si nanowires transforms as the radii of the carbon nanotubes increase, despite of the chirality of the CNTs. We also calculate the physical properties, such as density of states, transmission functions, current-voltage (I-V) characteristics, and conductance spectra (G-V) of optimized nanowires and alloy nanowires sandwiched between two gold contacts. Interestingly, compared with the pure Si nanowires, the conductance of the alloy nanowires is even lower.

Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

DOE PAGES

Young, David L.; Lee, Benjamin G.; Fogel, Derek; ...

2017-09-26

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less

Plasma sterol evidence for decreased absorption and increased synthesis of cholesterol in insulin resistance and obesity1234

PubMed Central

Knopp, Robert H; Kahn, Steven E; Retzlaff, Barbara M; Fish, Brian; Ma, Lina; Ostlund, Richard E

2011-01-01

Background: The rise in LDL with egg feeding in lean insulin-sensitive (LIS) participants is 2- and 3-fold greater than in lean insulin-resistant (LIR) and obese insulin-resistant (OIR) participants, respectively. Objective: We determined whether differences in cholesterol absorption, synthesis, or both could be responsible for these differences by measuring plasma sterols as indexes of cholesterol absorption and endogenous synthesis. Design: Plasma sterols were measured by gas chromatography–mass spectrometry in a random subset of 34 LIS, 37 LIR, and 37 OIR participants defined by the insulin sensitivity index (SI) and by BMI criteria selected from a parent group of 197 participants. Cholestanol and plant sterols provide a measure of cholesterol absorption, and lathosterol provides a measure of cholesterol synthesis. Results: The mean (±SD) ratio of plasma total absorption biomarker sterols to cholesterol was 4.48 ± 1.74 in LIS, 3.25 ± 1.06 in LIR, and 2.82 ± 1.08 in OIR participants. After adjustment for age and sex, the relations of the absorption sterol–cholesterol ratios were as follows: LIS > OIR (P < 0.001), LIS > LIR (P < 0.001), and LIR > OIR (P = 0.11). Lathosterol-cholesterol ratios were 0.71 ± 0.32 in the LIS participants, 0.95 ± 0.47 in the LIR participants, and 1.29 ± 0.55 in the OIR participants. After adjustment for age and sex, the relations of lathosterol-cholesterol ratios were as follows: LIS < OIR (P < 0.001), LIS < LIR (P = 0.03), and LIR < OIR (P = 0.002). Total sterol concentrations were positively associated with SI and negatively associated with obesity, whereas lathosterol correlations were the opposite. Conclusions: Cholesterol absorption was highest in the LIS participants, whereas cholesterol synthesis was highest in the LIR and OIR participants. Therapeutic diets for hyperlipidemia should emphasize low-cholesterol diets in LIS persons and weight loss to improve SI and to decrease cholesterol overproduction in LIR and OIR persons. PMID:21940599

Plasma sterol evidence for decreased absorption and increased synthesis of cholesterol in insulin resistance and obesity.

PubMed

Paramsothy, Pathmaja; Knopp, Robert H; Kahn, Steven E; Retzlaff, Barbara M; Fish, Brian; Ma, Lina; Ostlund, Richard E

2011-11-01

The rise in LDL with egg feeding in lean insulin-sensitive (LIS) participants is 2- and 3-fold greater than in lean insulin-resistant (LIR) and obese insulin-resistant (OIR) participants, respectively. We determined whether differences in cholesterol absorption, synthesis, or both could be responsible for these differences by measuring plasma sterols as indexes of cholesterol absorption and endogenous synthesis. Plasma sterols were measured by gas chromatography-mass spectrometry in a random subset of 34 LIS, 37 LIR, and 37 OIR participants defined by the insulin sensitivity index (S(I)) and by BMI criteria selected from a parent group of 197 participants. Cholestanol and plant sterols provide a measure of cholesterol absorption, and lathosterol provides a measure of cholesterol synthesis. The mean (±SD) ratio of plasma total absorption biomarker sterols to cholesterol was 4.48 ± 1.74 in LIS, 3.25 ± 1.06 in LIR, and 2.82 ± 1.08 in OIR participants. After adjustment for age and sex, the relations of the absorption sterol-cholesterol ratios were as follows: LIS > OIR (P < 0.001), LIS > LIR (P < 0.001), and LIR > OIR (P = 0.11). Lathosterol-cholesterol ratios were 0.71 ± 0.32 in the LIS participants, 0.95 ± 0.47 in the LIR participants, and 1.29 ± 0.55 in the OIR participants. After adjustment for age and sex, the relations of lathosterol-cholesterol ratios were as follows: LIS < OIR (P < 0.001), LIS < LIR (P = 0.03), and LIR < OIR (P = 0.002). Total sterol concentrations were positively associated with S(I) and negatively associated with obesity, whereas lathosterol correlations were the opposite. Cholesterol absorption was highest in the LIS participants, whereas cholesterol synthesis was highest in the LIR and OIR participants. Therapeutic diets for hyperlipidemia should emphasize low-cholesterol diets in LIS persons and weight loss to improve S(I) and to decrease cholesterol overproduction in LIR and OIR persons.

Cavity-enhanced measurements for determining dielectric-membrane thickness and complex index of refraction.

PubMed

Stambaugh, Corey; Durand, Mathieu; Kemiktarak, Utku; Lawall, John

2014-08-01

The material properties of silicon nitride (SiN) play an important role in the performance of SiN membranes used in optomechanical applications. An optimum design of a subwavelength high-contrast grating requires accurate knowledge of the membrane thickness and index of refraction, and its performance is ultimately limited by material absorption. Here we describe a cavity-enhanced method to measure the thickness and complex index of refraction of dielectric membranes with small, but nonzero, absorption coefficients. By determining Brewster's angle and an angle at which reflection is minimized by means of destructive interference, both the real part of the index of refraction and the sample thickness can be measured. A comparison of the losses in the empty cavity and the cavity containing the dielectric sample provides a measurement of the absorption.

Quantitative first-principles theory of interface absorption in multilayer heterostructures

DOE PAGES

Hachtel, Jordan A.; Sachan, Ritesh; Mishra, Rohan; ...

2015-09-03

The unique chemical bonds and electronic states of interfaces result in optical properties that are different from those of the constituting bulk materials. In the nanoscale regime, the interface effects can be dominant and impact the optical response of devices. Using density functional theory (DFT), the interface effects can be calculated, but DFT is computationally limited to small systems. In this paper, we describe a method to combine DFT with macroscopic methodologies to extract the interface effect on absorption in a consistent and quantifiable manner. The extracted interface effects are an independent parameter and can be applied to more complicatedmore » systems. Finally, we demonstrate, using NiSi 2/Si heterostructures, that by varying the relative volume fractions of interface and bulk, we can tune the spectral range of the heterostructure absorption.« less

In situ spectroscopy and spectroelectrochemistry of uranium in high-temperature alkali chloride molten salts.

PubMed

Polovov, Ilya B; Volkovich, Vladimir A; Charnock, John M; Kralj, Brett; Lewin, Robert G; Kinoshita, Hajime; May, Iain; Sharrad, Clint A

2008-09-01

Soluble uranium chloride species, in the oxidation states of III+, IV+, V+, and VI+, have been chemically generated in high-temperature alkali chloride melts. These reactions were monitored by in situ electronic absorption spectroscopy. In situ X-ray absorption spectroscopy of uranium(VI) in a molten LiCl-KCl eutectic was used to determine the immediate coordination environment about the uranium. The dominant species in the melt was [UO 2Cl 4] (2-). Further analysis of the extended X-ray absorption fine structure data and Raman spectroscopy of the melts quenched back to room temperature indicated the possibility of ordering beyond the first coordination sphere of [UO 2Cl 4] (2-). The electrolytic generation of uranium(III) in a molten LiCl-KCl eutectic was also investigated. Anodic dissolution of uranium metal was found to be more efficient at producing uranium(III) in high-temperature melts than the cathodic reduction of uranium(IV). These high-temperature electrolytic processes were studied by in situ electronic absorption spectroelectrochemistry, and we have also developed in situ X-ray absorption spectroelectrochemistry techniques to probe both the uranium oxidation state and the uranium coordination environment in these melts.

Band-engineering of TiO2 as a wide-band gap semiconductor using organic chromophore dyes

NASA Astrophysics Data System (ADS)

Wahyuningsih, S.; Kartini, I.; Ramelan, A. H.; Saputri, L. N. M. Z.; Munawaroh, H.

2017-07-01

Bond-engineering as applied to semiconductor materials refers to the manipulation of the energy bands in order to control charge transfer processes in a device. When the device in question is a photoelectrochemical cell, the charges affected by drift become the focus of the study. The ideal band gap of semiconductors for enhancement of photocatalyst activity can be lowered to match with visible light absorption and the location of conduction Band (CB) should be raised to meet the reducing capacity. Otherwise, by the addition of the chromofor organic dyes, the wide-band gab can be influences by interacation resulting between TiO2 surface and the dyes. We have done the impruvisation wide-band gap of TiO2 by the addition of organic chromophore dye, and the addition of transition metal dopand. The TiO2 morphology influence the light absorption as well as the surface modification. The organic chromophore dye was syntesized by formation complexes compound of Co(PAR)(SiPA)(PAR)= 4-(2-piridylazoresorcinol), SiPA = Silyl propil amine). The result showed that the chromophore groups adsorbed onto TiO2 surface can increase the visible light absorption of wide-band gab semiconductor. Initial absorption of a chromophore will affect light penetration into the material surfaces. The use of photonic material as a solar cell shows this phenomenon clearly from the IPCE (incident photon to current conversion efficiency) measurement data. Organic chromophore dyes of Co(PAR)(SiPA) exhibited the long wavelength absorption character compared to the N719 dye (from Dyesol).

The Contribution of Prohibitin 1 to Prostate Cancer Chemoresistance

DTIC Science & Technology

2015-10-01

ceramide-PEG5K in normal BALB/c mice after i.v. injection. The siRNA was labeled with near infrared (NIR) dye DY647. (B) Ex vivo fluorescence image of...ceramide-PEG5K (Right) siRNA NPs at 18 h. The siRNA was labeled with dye DY547. (Scale bar, 10 μm.) Zhu et al. PNAS | June 23, 2015 | vol. 112 | no...Woodrow KA, et al. (2009) Intravaginal gene silencing using biodegradable polymer nanoparticles densely loaded with small-interfering RNA. Nat Mater

Tunneling Microscopy of Submonolayer Adsorbates on Si(111)

DTIC Science & Technology

1989-10-01

and B are both trivalent and are both found in the same column of the periodic table. At 1/3 ML coverage on Si(1 11), both induce the identical...the theoretical and experimental status of trivalent metal adsorption 6 on Si(1 11) that existed prior to our experiments. Chapters IV and V present...formed by evaporating 500A of chromium and 1000A of platinum on each face. The transducer must then be poled by immersing it in tetrachloroethane and

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

PubMed Central

2014-01-01

Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

Influence of SiO2 Addition on Properties of PTFE/TiO2 Microwave Composites

NASA Astrophysics Data System (ADS)

Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren

2018-01-01

Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (<0.02%) were obtained, resulting from the relatively high density of the composites. The ceramic particles served as barriers and improved the thermal stability of the PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).

SERS active Ag encapsulated Fe@SiO2 nanorods in electromagnetic wave absorption and crystal violet detection.

PubMed

Senapati, Samarpita; Srivastava, Suneel Kumar; Singh, Shiv Brat; Kulkarni, Ajit R

2014-11-01

The present work is focused on the preparation of Fe nanorods by the chemical reduction of FeCl3 (aq) using NaBH4 in the presence of glycerol as template followed by annealing of the product at 500°C in the presence of H2 gas flow. Subsequently, its surface has been modified by silica followed by silver nanoparticles to form silica coated Fe (Fe@SiO2) and Ag encapsulated Fe@SiO2 nanostructure employing the Stöber method and silver mirror reaction respectively. XRD pattern of the products confirmed the formation of bcc phase of iron and fcc phase of silver, though silica remained amorphous. FESEM images established the growth of iron nanorods from the annealed product and also formation of silica and silver coating on its surface. The appearance of the characteristics bands in FTIR confirmed the presence of SiO2 on the Fe surface. Magnetic measurements at room temperature indicated the ferromagnetic behavior of as prepared iron nanorods, Fe@SiO2 and silver encapsulated Fe@SiO2 nanostructures. All the samples exhibited strong microwave absorption property in the high frequency range (10GHz), though it is superior for Ag encapsulated Fe@SiO2 (-14.7dB) compared with Fe@SiO2 (-9.7dB) nanostructures of the same thickness. The synthesized Ag encapsulated Fe@SiO2 nanostructure also exhibited the SERS phenomena, which is useful in the detection of the carcinogenic dye crystal violet (CV) upto the concentration of 10(-10)M. All these findings clearly demonstrate that the Ag encapsulated Fe@SiO2 nanostructure could efficiently be used in the environmental remediation. Copyright © 2014 Elsevier Inc. All rights reserved.

Wind Variability of B Supergiants. No. 1; The Rapid Rotator HD 64760 (B0.5 Ib)

NASA Technical Reports Server (NTRS)

Massa, Derck; Prinja, Raman K.; Fullerton, Alexander W.

1995-01-01

We present the results of a 6 day time series of observations of the rapidly rotating B0.5 Ib star HD 64760. We point out several reasons why such intermediate luminosity B supergiants are ideal targets for wind variability studies and then present our results that show the following: continuous wind activity throughout the 6 day run with the wind never in steady state for more than a few hr; wind variability very near nu = 0 km sec(exp -1) in the resonance lines from the lower ionization stages (Al III and C II); a distinct correlation between variability in the Si III ; lambda(lambda)1300 triplets, the strong C III (lambda)1247 singlet, and the onset of extremely strong wind activity, suggesting a connection between photospheric and wind activity; long temporal coherence in the behavior of the strong absorption events; evidence for large-scale spatial coherence, implied by a whole scale, simultaneous weakening in the wind absorption over a wide range in velocities; and ionization variability in the wind accompanying the largest changes in the absorption strengths of the wind lines. In addition, modeling of the wind lines provides the following information about the state the wind in HD 64760. The number of structures on the portion of a constant velocity surface occulting the stellar disk at a particular time must be quite small, while the number on the entire constant velocity surface throughout the wind must be large. The escape probability at low velocity is overestimated by a normal beta approx. 1 velocity law, perhaps due to the presence of low-velocity shocks deep in the wind or a shallow velocity gradient at low velocity. Estimates of the ionization structure in the wind indicate that the ionization ratios are not those expected from thermal equilibrium wind models or from an extrapolation of previous O star results. The large observed q(N V)/q(Si IV) ratio is almost certainly due to distributed X-rays, but the level of ionization predicted by distributed X-ray wind models is inconsistent with the predicted mass-loss rate. Thus, it is impossible to reconcile the observed ionization ratios and the predicted mass-loss rate within the framework of the available models.

A New Scheme for the Detection of Optical Radiation in the External Photoemissive Mode: Device Implementation

DTIC Science & Technology

2011-05-31

Ag that was 5µm thick and prepared at 550 C on a high resistivity Si(111) substrate. This absorption is typical of composite films prepared with...Radiometric Measurements In our Ag-Si composite film studies we used mainly n-type doped silicon, though we did prepare some Ag-Si films with p...type silicon targets. In particular we found that a 5µm thick film prepared at 550 C by magnetron co-sputtering from Ag and p-type Si (boron doped

Fundamental Properties and Devices Applications of Ge(x)Si(1-x)/Si Superlattices.

DTIC Science & Technology

1987-01-01

prediction of resonances of intraband absorption (d) study of B203 as a low temperature p-type dopant. Initial stage of growth of Ge Si, /Si films were...rati, predicted has not been real- is gien by izedexpenmentally Discrepancie, are to be expected. hoss- = [aAi( -t ) bBi( -t )]exp(ik .p). (I ever, as...devices can result in high-frequency ampli- sumed to be the single barrier tunneling current. A time con- fication Tsu and Esaki’ had predicted NDR in

Towards Resonant-State THz Laser Based on Strained p-Ge and SiGe QW Structures

DTIC Science & Technology

2006-07-01

used. The relaxed compositionally graded Si1-xGex/Si(001) buffer layer with low threading dislocations density have been grown by chemical vapour ...observe in absorption experiments. 5. Intracenter optical transitions between hydrogenic levels in doped silicon, germanium, and gallium arsenid [P...34, b. Critical magnetic field Hc vs valence band splitting Δ. Lines show the calculated Hc(Δ) dependence. 14. The gallium -doped Ge crystals with

Studies of the Si/SiO2 interface using synchrotron radiation

NASA Technical Reports Server (NTRS)

Hecht, M. H.; Grunthaner, F. J.

1985-01-01

Synchrotron radiation photoemission spectroscopy (SRPS) in the 1-4 KeV photon energy range is a useful tool for interface characterization. Results are presented of a series of studies of the near-interface region of Si/SiO2 which confirm that a bond strain gradient exists in the oxide as a result of lattice mismatch. These experiments include measurement of photoemission lineshape changes as a function of photon energy, corresponding changes in the electron escape depth near the interface, and surface extended X-ray absorption fine structure (SEXAFS) measurements directly indicating the shortening of the Si-Si second nearest neighbor distance in the near-interface region of the oxide.

Characterization by optical and magnetic spectroscopy of a synthesized SiO2 thin film used for radiation detector

NASA Astrophysics Data System (ADS)

Abdelaziz, T. D.; Ezz-Eldin, F. M.

2017-09-01

This work reports the synthesis and characterization of silica glass prepared by sol-gel procedure and finds out the effects of doses of gamma irradiation on the steps route of the heat-treated sample at 600 and 1100 °C. Combined characterizations of the glassy samples have been carried out by optical absorption and electron paramagnetic resonance. Also, FT infrared absorption spectra have been measured for both the heat-treated samples before and after gamma irradiation. Optical absorption spectra have identified an absorption band at 212-215 nm beside a broad band at 230-265 nm and the correlation of E' center with heat-treatment and gamma irradiation have been followed. FT infrared absorption spectra indicate the bands within near IR region representing the vibrational modes due to water, OH and SiOH within the wavenumber range 2500-3700 cm-1 are affected by heat treatment due to the elimination of organic residue and amount of OH and water. ESR investigations confirm the results obtained from optical and FTIR measurements. It is concluded from the collective data that sol-gel silica glass can serve as acceptable candidate for gamma-rays irradiator and gamma chamber dosimetry.