Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer.

PubMed

Pierucci, Debora; Brumme, Thomas; Girard, Jean-Christophe; Calandra, Matteo; Silly, Mathieu G; Sirotti, Fausto; Barbier, Antoine; Mauri, Francesco; Ouerghi, Abdelkarim

2016-09-15

The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Different spectra are observed and are attributed to the existence of two stable polytypes of trilayer: Bernal (ABA) and rhomboedreal (ABC) staking. Their electronic properties strongly depend on the charge transfer from the substrate. We show that the LDOS of ABC stacking shows an additional peak located above the Dirac point in comparison with the LDOS of ABA stacking. The observed LDOS features, reflecting the underlying symmetry of the two polytypes, were reproduced by explicit calculations within density functional theory (DFT) including the charge transfer from the substrate. These findings demonstrate the pronounced effect of stacking order and charge transfer on the electronic structure of trilayer or few layer graphene. Our approach represents a significant step toward understand the electronic properties of graphene layer under electrical field.

Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Cheng-Hsun-Tony; Fu, Tsu-Yi; Tsay, Jyh-Shen, E-mail: jstsay@phy.ntnu.edu.tw

Combined scanning tunneling microscopy, Auger electron spectroscopy, and surface magneto-optic Kerr effect studies were employed to study the microscopic structures and magnetic properties for ultrathin Co/√(3)×√(3)R30°-Ag/Si(111). As the annealing temperature increases, the upward diffusion of Si atoms and formation of Co silicides occurs at temperature above 400 K. Below 600 K, the √(3)×√(3)R30°-Ag/Si(111) surface structure persists. We propose an interaction transferring mechanism of Si atoms across the √(3)×√(3)R30°-Ag layer. The upward transferred Si atoms react with Co atoms to form Co silicide. The step height across the edge of the island, a separation of 0.75 nm from the analysis of the 2 × 2 structure,more » and the calculations of the normalized Auger signal serve as strong evidences for the formation of CoSi{sub 2} at the interface. The interaction transferring mechanism for Si atoms enhances the possibility of interactions between Co and Si atoms. The smoothness of the surface is advantage for that the easy axis of magnetization for Co/√(3)×√(3)R30°-Ag/Si(111) is in the surface plane. This provides a possible way of growing flat magnetic layers on silicon substrate with controllable silicide formation and shows potential applications in spintronics devices.« less

C@SiNW/TiO2 Core-Shell Nanoarrays with Sandwiched Carbon Passivation Layer as High Efficiency Photoelectrode for Water Splitting

PubMed Central

Devarapalli, Rami Reddy; Debgupta, Joyashish; Pillai, Vijayamohanan K.; Shelke, Manjusha V.

2014-01-01

One-dimensional heterostructure nanoarrays are efficiently promising as high performance electrodes for photo electrochemical (PEC) water splitting applications, wherein it is highly desirable for the electrode to have a broad light absorption, efficient charge separation and redox properties as well as defect free surface with high area suitable for fast interfacial charge transfer. We present highly active and unique photoelectrode for solar H2 production, consisting of silicon nanowires (SiNWs)/TiO2 core-shell structures. SiNWs are passivated to reduce defect sites and protected against oxidation in air or water by forming very thin carbon layer sandwiched between SiNW and TiO2 surfaces. This carbon layer decreases recombination rates and also enhances the interfacial charge transfer between the silicon and TiO2. A systematic investigation of the role of SiNW length and TiO2 thickness on photocurrent reveals enhanced photocurrent density up to 5.97 mA/cm2 at 1.0 V vs.NHE by using C@SiNW/TiO2 nanoarrays with photo electrochemical efficiency of 1.17%. PMID:24810865

Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

NASA Astrophysics Data System (ADS)

Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

2018-04-01

We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

Ultrashort hybrid metal-insulator plasmonic directional coupler.

PubMed

Noghani, Mahmoud Talafi; Samiei, Mohammad Hashem Vadjed

2013-11-01

An ultrashort plasmonic directional coupler based on the hybrid metal-insulator slab waveguide is proposed and analyzed at the telecommunication wavelength of 1550 nm. It is first analyzed using the supermode theory based on mode analysis via the transfer matrix method in the interaction region. Then the 2D model of the coupler, including transition arms, is analyzed using a commercial finite-element method simulator. The hybrid slab waveguide is composed of a metallic layer of silver and two dielectric layers of silica (SiO2) and silicon (Si). The coupler is optimized to have a minimum coupling length and to transfer maximum power considering the layer thicknesses as optimization variables. The resulting coupling length in the submicrometer region along with a noticeable power transfer efficiency are advantages of the proposed coupler compared to previously reported plasmonic couplers.

Solid State Research.

DTIC Science & Technology

1982-11-22

48 Fabricated in Zone-Melting-Recrystallized Si Films on Si0 2-Coated Si Substrates V 4. MICROELECTRONICS 55 4.1 Charge-Coupled Devices: Time...OMCVD to the CLEFT (cleavage of lateral epitaxial films for transfer) process, a continuous epitaxial GaAs layer 3 Ym thick has been grown over a...complete-island-etch or local-oxidation-of-Si isolation, that were fabricated in zone-melting-recrystallized Si films on Si02-coated Si substrates. As

Strain-Engineered Nanomembrane Substrates for Si/SiGe Heterostructures

NASA Astrophysics Data System (ADS)

Sookchoo, Pornsatit

For Group IV materials, including silicon, germanium, and their alloys, although they are most widely used in the electronics industry, the development of photonic devices is hindered by indirect band gaps and large lattice mismatches. Thus, any heterostructures involving Si and Ge (4.17% lattice mismatch) are subject to plastic relaxation by dislocation formation in the heterolayers. These defects make many devices impossible and at minimum degrade the performance of those that are possible. Fabrication using elastic strain engineering in Si/SiGe nanomembranes (NMs) is an approach that is showing promise to overcome this limitation. A key advantage of such NM substrates over conventional bulk substrates is that they are relaxed elastically and therefore free of dislocations that occur in the conventional fabrication of SiGe substrates, which are transferred to the epilayers and roughen film interfaces. In this thesis, I use the strain engineering of NMs or NM stacks to fabricate substrates for the epitaxial growth of many repeating units of Si/SiGe heterostructure, known as a 'superlattice', by the elastic strain sharing of a few periods of the repeating unit of Si/SiGe heterolayers or a Si/SiGe/Si tri-layer structure. In both cases, the process begins with the epitaxial growth of Si/SiGe heterolayers on silicon-on-insulator (SOI), where each layer thickness is designed to stay below its kinetic critical thickness for the formation of dislocations. The heterostructure NMs are then released by etching of the SiO2 sacrificial layer in hydrofluoric acid. The resulting freestanding NMs are elastically relaxed by the sharing of strain between the heterolayers. The NMs can be bonded in-place to their host substrate or transferred to another host substrate for the subsequent growth of many periods of superlattice film. The magnitude of strain sharing in these freestanding NMs is influenced by their layer thicknesses and layer compositions. As illustrated in this dissertation, strain-engineering of such NMs can provide the enabling basis for improved Group IV optoelectronic devices.

Radiation Hardened Silicon-on-Insulator Structures with N+ Ion Modified Buried SiO2 Layer

NASA Astrophysics Data System (ADS)

Tyschenko, I. E.; Popov, V. P.

2009-12-01

Radiation-resistant silicon-on-insulator structures were produced by N+ ion implantation into thermally grown SiO2 film and subsequent hydrogen transfer of the Si layer to the nitrogen-implanted substrate under conditions of vacuum wafer bonding. Accumulation of the carriers in the buried SiO2 was investigated as a function of fluence of nitrogen ions in the range (1-6)×1015 cm2 and as a function of total radiation dose ranging from 104 to 107 rad (Si). It was found that the charge generated near the nitrided bonding interface was reduced by a factor of four compared to the thermal SiO2/Si interface.

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

NASA Astrophysics Data System (ADS)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NASA Astrophysics Data System (ADS)

Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

2017-12-01

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Ballistic vs. diffusive heat transfer across nanoscopic films of layered crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Meng; Keblinski, Pawel, E-mail: keblip@rpi.edu

2014-04-14

We use non-equilibrium molecular dynamics to study the heat transfer mechanism across sandwich interfacial structures of Si/n-atomic-layers/Si, with 1 ≤ n ≤ 20 and atomic layers composed of WSe{sub 2} and/or graphene. In the case of WSe{sub 2} sheets, we observe that the thermal resistance of the sandwich structure is increasing almost linearly with the number of WSe{sub 2} sheets, n, indicating a diffusive phonon transport mechanism. By contrast in the case of n graphene layers, the interfacial thermal resistance is more or less independent on the number of layers for 1 ≤ n ≤ 10, and is associated with ballistic phonon transport mechanism. We attribute the diffusivemore » heat transfer mechanism across WSe{sub 2} sheets to abundant low frequency and low group velocity optical modes that carry most of the heat across the interface. By contrast, in graphene, acoustic modes dominate the thermal transport across the interface and render a ballistic heat flow mechanism.« less

Reflection high-energy electron diffraction measurements of reciprocal space structure of 2D materials.

PubMed

Xiang, Y; Guo, F-W; Lu, T-M; Wang, G-C

2016-12-02

Knowledge on the symmetry and perfection of a 2D material deposited or transferred to a surface is very important and valuable. We demonstrate a method to map the reciprocal space structure of 2D materials using reflection high energy diffraction (RHEED). RHEED from a 2D material gives rise to 'streaks' patterns. It is shown that from these streaks patterns at different azimuthal rotation angles that the reciprocal space intensity distribution can be constructed as a function of momentum transfer parallel to the surface. To illustrate the principle, we experimentally constructed the reciprocal space structure of a commercial graphene/SiO 2 /Si sample in which the graphene layer was transferred to the SiO 2 /Si substrate after it was deposited on a Cu foil by chemical vapor deposition. The result reveals a 12-fold symmetry of the graphene layer which is a result of two dominant orientation domains with 30° rotation relative to each other. We show that the graphene can serve as a template to grow other materials such as a SnS film that follows the symmetry of graphene.

Electrostatic transfer of epitaxial graphene to glass.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohta, Taisuke; Pan, Wei; Howell, Stephen Wayne

2010-12-01

We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environmentmore » [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.« less

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

NASA Astrophysics Data System (ADS)

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

2015-08-01

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02786a

Fracture in Hydrogen-Implanted Germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazen, F.; Tauzin, A.; Sanchez, L.

2008-11-03

We have studied the mechanism of fracture in hydrogen-implanted Ge. First, the as-implanted Ge state and its evolution during subsequent annealing were characterized via TEM and FTIR-MIR spectroscopy. Results showed that the extended defects formation and growth follow the same basic mechanism in Ge as in Si, which is the reference material. Nevertheless, the global damage level in the implanted Ge layer is higher compared to Si. Second, the fracture step was studied via the fracture kinetics analysis, SIMS and AFM on the transferred layer. An activation energy comparable to the reported data from blistering studies was obtained. Just likemore » in Si, the Cmax of H in Ge measured via SIMS was found to decrease during the fracture anneal. This decrease is associated with the formation of gaseous H{sub 2} that pressurizes the internal cavities and then contributes to the fracture. Finally, a high roughness of the Ge transferred layer was measured, which results from the large thickness of the implantation damaged zone.« less

Formation and investigation of ultrathin layers of Co2FeSi ferromagnetic alloy synthesized on silicon covered with a CaF2 barrier layer

NASA Astrophysics Data System (ADS)

Grebenyuk, G. S.; Gomoyunova, M. V.; Pronin, I. I.; Vyalikh, D. V.; Molodtsov, S. L.

2016-03-01

Ultrathin (∼2 nm) films of Co2FeSi ferromagnetic alloy were formed on silicon by solid-phase epitaxy and studied in situ. Experiments were carried out in an ultrahigh vacuum (UHV) using substrates of Si(1 1 1) single crystals covered with a 5 nm thick CaF2 barrier layer. The elemental and phase composition as well as the magnetic properties of the synthesized films were analyzed by photoelectron spectroscopy using synchrotron radiation and by magnetic linear dichroism in photoemission of Fe 3p and Co 3p electrons. The study shows that the synthesis of the Co2FeSi ferromagnetic alloy occurs in the temperature range of 200-400 °C. At higher temperatures, the films become island-like and lose their ferromagnetic properties, as the CaF2 barrier layer is unable to prevent a mass transfer between the film and the Si substrate, which violates the stoichiometry of the alloy.

Dissolution of Si in Molten Al with Gas Injection

NASA Astrophysics Data System (ADS)

Seyed Ahmadi, Mehran

Silicon is an essential component of many aluminum alloys, as it imparts a range of desirable characteristics. However, there are considerable practical difficulties in dissolving solid Si in molten Al, because the dissolution process is slow, resulting in material and energy losses. It is thus essential to examine Si dissolution in molten Al, to identify means of accelerating the process. This thesis presents an experimental study of the effect of Si purity, bath temperature, fluid flow conditions, and gas stirring on the dissolution of Si in molten Al, plus the results of physical and numerical modeling of the flow to corroborate the experimental results. The dissolution experiments were conducted in a revolving liquid metal tank to generate a bulk velocity, and gas was introduced into the melt using top lance injection. Cylindrical Si specimens were immersed into molten Al for fixed durations, and upon removal the dissolved Si was measured. The shape and trajectory of injected bubbles were examined by means of auxiliary water experiments and video recordings of the molten Al free surface. The gas-agitated liquid was simulated using the commercial software FLOW-3D. The simulation results provide insights into bubble dynamics and offer estimates of the fluctuating velocities within the Al bath. The experimental results indicate that the dissolution rate of Si increases in tandem with the melt temperature and bulk velocity. A higher bath temperature increases the solubility of Si at the solid/liquid interface, resulting in a greater driving force for mass transfer, and a higher liquid velocity decreases the resistance to mass transfer via a thinner mass boundary layer. Impurities (with lower diffusion coefficients) in the form of inclusions obstruct the dissolution of the Si main matrix. Finally, dissolution rate enhancement was observed by gas agitation. It is postulated that the bubble-induced fluctuating velocities disturb the mass boundary layer, which increases the mass transfer rate. Correlations derived for mass transfer from solids in liquids under various operating conditions were applied to the Al--Si system. A new correlation for combined natural and forced convection mass transfer from vertical cylinders in cross flow is presented, and a modification is proposed to take into account free stream turbulence in a correlation for forced convection mass transfer from vertical cylinders in cross flow.

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates.

PubMed

Lukosius, M; Dabrowski, J; Kitzmann, J; Fursenko, O; Akhtar, F; Lisker, M; Lippert, G; Schulze, S; Yamamoto, Y; Schubert, M A; Krause, H M; Wolff, A; Mai, A; Schroeder, T; Lupina, G

2016-12-14

Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible, 200 mm graphene was obtained on Ge(001)/Si(001) wafers in this work. Chemical vapor depositions were carried out at the deposition temperatures of 885 °C using CH 4 as carbon source on epitaxial Ge(100) layers, which were grown on Si(100), prior to the graphene synthesis. Graphene layer with the 2D/G ratio ∼3 and low D mode (i.e., low concentration of defects) was measured over the entire 200 mm wafer by Raman spectroscopy. A typical full-width-at-half-maximum value of 39 cm -1 was extracted for the 2D mode, further indicating that graphene of good structural quality was produced. The study also revealed that the lack of interfacial oxide correlates with superior properties of graphene. In order to evaluate electrical properties of graphene, its 2 × 2 cm 2 pieces were transferred onto SiO 2 /Si substrates from Ge/Si wafers. The extracted sheet resistance and mobility values of transferred graphene layers were ∼1500 ± 100 Ω/sq and μ ≈ 400 ± 20 cm 2 /V s, respectively. The transferred graphene was free of metallic contaminations or mechanical damage. On the basis of results of DFT calculations, we attribute the high structural quality of graphene grown by CVD on Ge to hydrogen-induced reduction of nucleation probability, explain the appearance of graphene-induced facets on Ge(001) as a kinetic effect caused by surface step pinning at linear graphene nuclei, and clarify the orientation of graphene domains on Ge(001) as resulting from good lattice matching between Ge(001) and graphene nucleated on such nuclei.

Metallic impurities-silicon carbide interaction in HTGR fuel particles

NASA Astrophysics Data System (ADS)

Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

1990-12-01

Corrosion of the coating layers of silicon carbide (SiC) by metallic impurities was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors with an optical microscope and an electron probe micro-analyzer. The SiC layers were attacked from the outside of the particles. The main element observed in the corroded areas was iron, but sometimes iron and nickel were found. These elements must have been contained as impurities in the graphite matrix in which the coated particles were dispersed. Since these elements are more stable thermodynamically in the presence of SiC than in the presence of graphite at irradiation temperatures, they were transferred to the SiC layer to form more stable silicides. During fuel manufacturing processes, intensive care should be taken to prevent the fuel from being contaminated with those elements which react with SiC.

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

PubMed

Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

2018-04-04

Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

Photonic band gap and defects modes in inorganic/organic photonic crystal based on Si and HMDSO layers deposited by sputtering and PECVD

NASA Astrophysics Data System (ADS)

Amri, R.; Sahel, S.; Gamra, D.; Lejeune, M.; Clin, M.; Zellama, K.; Bouchriha, H.

2018-02-01

Hybrid inorganic/organic one dimensional photonic crystal based on alternating layers of Si/HMDSO is elaborated. The inorganic silicon is deposited by radiofrequency magnetron sputtering and the organic HMDSO is deposited by PECVD technique. As the Si refractive index is n = 3.4, and the refractive index of HMDSO layer depend on the deposition conditions, to get a photonic crystal with high and low refractive index presenting a good contrast, we have varied the radiofrequency power of PECVD process to obtain HMDSO layer with low refractive index (n = 1.45). Photonic band gap of this hybrid structure is obtained from the transmission and reflection spectra and appears after 9 alternative layers of Si/HMDSO. The introduction of defects in our photonic crystal leads to the emergence of localized modes within the photonic band gap. Our results are interpreted by using a theoretical model based on transfer matrix.

A Reaction Between High Mn-High Al Steel and CaO-SiO2-Type Molten Mold Flux: Part II. Reaction Mechanism, Interface Morphology, and Al2O3 Accumulation in Molten Mold Flux

NASA Astrophysics Data System (ADS)

Kang, Youn-Bae; Kim, Min-Su; Lee, Su-Wan; Cho, Jung-Wook; Park, Min-Seok; Lee, Hae-Geon

2013-04-01

Following a series of laboratory-scale experiments, the mechanism of a chemical reaction 4[{Al}] + 3({SiO}_2) = 3[{Si}] + 2({Al}_2{O}_3) between high-alloyed TWIP (TWin-Induced Plasticity) steel containing Mn and Al and molten mold flux composed mainly of CaO-SiO2 during the continuous casting process is discussed in the present article in the context of kinetic analysis, morphological evolution at the reaction interface. By the kinetic analysis using a two-film theory, a rate-controlling step of the chemical reaction at the interface between the molten steel and the molten flux is found to be mass transport of Al in a boundary layer of the molten steel, as long as the molten steel and the molten flux phases are concerned. Mass transfer coefficient of the Al in the boundary layer (k_{{Al}}) is estimated to be 0.9 to 1.2 × 10-4 m/s at 1773 K (1500 ^{circ}C). By utilizing experimental data at various temperatures, the following equation is obtained for the k_{{Al}}; ln k_{{Al}} = -14,290/T - 1.1107. Activation energy for the mass transfer of Al in the boundary layer is 119 kJ/mol, which is close to a value of activation energy for mass transfer in metal phase. The composition evolution of Al in the molten steel was well explained by the mechanism of Al mass transfer. On the other hand, when the concentration of Al in the steel was high, a significant deviation of the composition evolution of Al in the molten steel was observed. By observing reaction interface between the molten steel and the molten flux, it is thought that the chemical reaction controlled by the mass transfer of Al seemed to be disturbed by formation of a solid product layer of MgAl2O4. A model based on a dynamic mass balance and the reaction mechanism of mass transfer of Al in the boundary layer for the low Al steel was developed to predict (pct Al2O3) accumulation rate in the molten mold flux.

Formation of atomically smooth epitaxial metal films on a chemically reactive interface: Mg on Si(111)

NASA Astrophysics Data System (ADS)

Özer, Mustafa M.; Weitering, Hanno H.

2013-07-01

Deposition of Mg on Si(111)7 × 7 produces an epitaxial magnesium silicide layer. Under identical annealing conditions, the thickness of this Mg2Si(111) layer increases with deposition amount, reaching a maximum of 4 monolayer (ML) and decreasing to ˜3 ML at higher Mg coverage. Excess Mg coalesces into atomically flat, crystalline Mg(0001) films. This surprising growth mode can be attributed to the accidental commensurability of the Mg(0001), Si(111), and Mg2Si(111) interlayer spacing and the concurrent minimization of in-plane Si mass transfer and domain-wall energies. The commensurability of the interlayer spacing defines a highly unique solid-phase epitaxial growth process capable of producing trilayer structures with atomically abrupt interfaces and atomically smooth surface morphologies.

Photoacoustic emission from Au nanoparticles arrayed on thermal insulation layer.

PubMed

Namura, Kyoko; Suzuki, Motofumi; Nakajima, Kaoru; Kimura, Kenji

2013-04-08

Efficient photoacoustic emission from Au nanoparticles on a porous SiO(2) layer was investigated experimentally and theoretically. The Au nanoparticle arrays/porous SiO(2)/SiO(2)/Ag mirror sandwiches, namely, local plasmon resonators, were prepared by dynamic oblique deposition (DOD). Photoacoustic measurements were performed on the local plasmon resonators, whose optical absorption was varied from 0.03 (3%) to 0.95 by varying the thickness of the dielectric SiO(2) layer. The sample with high absorption (0.95) emitted a sound that was eight times stronger than that emitted by graphite (0.94) and three times stronger than that emitted by the sample without the porous SiO(2) layer (0.93). The contribution of the porous SiO(2) layer to the efficient photoacoustic emission was analyzed by means of a numerical method based on a one-dimensional heat transfer model. The result suggested that the low thermal conductivity of the underlying porous layer reduces the amount of heat escaping from the substrate and contributes to the efficient photoacoustic emission from Au nanoparticle arrays. Because both the thermal conductivity and the spatial distribution of the heat generation can be controlled by DOD, the local plasmon resonators produced by DOD are suitable for the spatio-temporal modulation of the local temperature.

High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer

PubMed Central

Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

2015-01-01

Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/PEDOT:PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/PEDOT:PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/PEDOT:PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells. PMID:26610848

High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer.

PubMed

Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

2015-11-27

Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) ( PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/ PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/ PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/ PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells.

Silicon carbon(001) gas-source molecular beam epitaxy from methyl silane and silicon hydride: The effects of carbon incorporation and surface segregation on growth kinetics

NASA Astrophysics Data System (ADS)

Foo, Yong-Lim

Si1-yCy alloys were grown on Si(001) by gas-source molecular-beam epitaxy (GS-MBE) from Si2H6/CH3 SiH3 mixtures as a function of C concentration y (0 to 2.6 at %) and deposition temperature Ts (500--600°C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In-situ isotopically-tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregates to the second-layer during steady-state Si1-y Cy(001) growth. This, in turn, results in charge-transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θ Si*(y, Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H 6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts, JSi2H6,J CH3SiH3 ) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in good agreement with the experimental data. At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself.

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

NASA Astrophysics Data System (ADS)

Chokawa, Kenta; Narita, Tetsuo; Kikuta, Daigo; Kachi, Tetsu; Shiozaki, Koji; Shiraishi, Kenji

2018-03-01

We examine the energy band diagram at the n-type GaN (n-GaN)/SiO2 interface and show that electron transfer from n-GaN to SiO2 leads to the formation of negatively charged oxygen vacancies in the SiO2, resulting in the self-formation of an n-GaN/Ga2O3/SiO2 structure. On the other hand, it is difficult to automatically form Ga2O3 at a p-type GaN (p-GaN)/SiO2 interface. This electron-transfer-induced self-formation of Ga2O3 causes an interface dipole, which leads to band bending, resulting in an increase in the conduction band offset between GaN and SiO2. Accordingly, by using this self-forming phenomenon, GaN MOSFETs with lower leakage current can be realized.

Charge transfer at organic-inorganic interfaces—Indoline layers on semiconductor substrates

NASA Astrophysics Data System (ADS)

Meyenburg, I.; Falgenhauer, J.; Rosemann, N. W.; Chatterjee, S.; Schlettwein, D.; Heimbrodt, W.

2016-12-01

We studied the electron transfer from excitons in adsorbed indoline dye layers across the organic-inorganic interface. The hybrids consist of indoline derivatives on the one hand and different inorganic substrates (TiO2, ZnO, SiO2(0001), fused silica) on the other. We reveal the electron transfer times from excitons in dye layers to the organic-inorganic interface by analyzing the photoluminescence transients of the dye layers after femtosecond excitation and applying kinetic model calculations. A correlation between the transfer times and four parameters have been found: (i) the number of anchoring groups, (ii) the distance between the dye and the organic-inorganic interface, which was varied by the alkyl-chain lengths between the carboxylate anchoring group and the dye, (iii) the thickness of the adsorbed dye layer, and (iv) the level alignment between the excited dye ( π* -level) and the conduction band minimum of the inorganic semiconductor.

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

NASA Astrophysics Data System (ADS)

Zhang, Lei; Shen, Hong-Lie; Yue, Zhi-Hao; Jiang, Feng; Wu, Tian-Ru; Pan, Yuan-Yuan

2013-01-01

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density—voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.

Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

NASA Astrophysics Data System (ADS)

Lehnert, Jan; Spemann, Daniel; Hamza Hatahet, M.; Mändl, Stephan; Mensing, Michael; Finzel, Annemarie; Varga, Aron; Rauschenbach, Bernd

2017-06-01

In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm2 in size) were pre-annealed in a vacuum at 950 °C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 °C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of ˜900 μm size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene.

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musalinov, S. B.; Anzulevich, A. P.; Bychkov, I. V.

2017-01-15

The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It ismore » shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.« less

Electroluminescent Yb2O3:Er and Yb2Si2O7:Er nanolaminate films fabricated by atomic layer deposition on silicon

NASA Astrophysics Data System (ADS)

Ouyang, Zhongtao; Yang, Yang; Sun, Jiaming

2018-06-01

Atomic layer doped Yb2O3:Er and Yb2Si2O7:Er nanolaminate films are fabricated on silicon by atomic layer deposition, and ∼1530 nm electroluminescence (EL) is obtained from the metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on these films. The Yb2O3 films transfer to Yb2Si2O7 phase after annealing above 1000 °C. Intense photoluminescence from Yb2Si2O7 film confirms high efficiency and energy transfer under optical excitation, but the limited electron conduction restricts the EL performance. EL from the Yb2O3:Er MOSLED outperforms, presenting an external quantum efficiency up to 8.5% and the power efficiency of 1 × 10-3. The EL is derived to result from the impact excitation of Er3+ ions by hot electrons, which stem from Fowler-Nordheim tunneling mechanism under sufficient bias voltage. The critical distance for the cross relaxation of doped Er3+ ions in nanolaminate Yb2O3 matrix is experimentally determined to be ∼3 nm. Such devices manifest the technological potential of Er-doped Yb-oxides for applications in silicon-based optoelectronics.

Organic-inorganic proximity effect in the magneto-conductance of vertical organic field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatryan, B.; Devir-Wolfman, A. H.; Ehrenfreund, E., E-mail: eitane@technion.ac.il

Vertical organic field effect transistors having a patterned source electrode and an a-SiO{sub 2} insulation layer show high performance as a switching element with high transfer characteristics. By measuring the low field magneto-conductance under ambient conditions at room temperature, we show here that the proximity of the inorganic a-SiO{sub 2} insulation to the organic conducting channel affects considerably the magnetic response. We propose that in n-type devices, electrons in the organic conducting channel and spin bearing charged defects in the inorganic a-SiO{sub 2} insulation layer (e.g., O{sub 2} = Si{sup +·}) form oppositely charged spin pairs whose singlet-triplet spin configurations are mixedmore » through the relatively strong hyperfine field of {sup 29}Si. By increasing the contact area between the insulation layer and the conducting channel, the ∼2% magneto-conductance response may be considerably enhanced.« less

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

PubMed

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, NoSoung; Ko, Heung Cho; Jung, Gun Young

2015-08-28

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

Microstructure and Mechanical Properties of Cr-SiC Particles-Reinforced Fe-Based Alloy Coating

NASA Astrophysics Data System (ADS)

Wang, Fu-cheng; Du, Xiao-dong; Zhan, Ma-ji; Lang, Jing-wei; Zhou, Dan; Liu, Guang-fu; Shen, Jian

2015-12-01

In this study, SiC particles were first coated with Cr to form a layer that can protect the SiC particles from dissolution in the molten pool. Then, the Cr-SiC powder was injected into the tail of molten pool during plasma-transferred arc welding process (PTAW), where the temperature was relatively low, to prepare Cr-SiC particles reinforced Fe-based alloy coating. The microstructure and phase composition of the powder and surface coatings were analyzed, and the element distribution and hardness at the interfacial region were also evaluated. The protective layer consists of Cr3Si, Cr7C3, and Cr23C6, which play an important role in the microstructure and mechanical properties. The protective layer is dissolved in the molten pool forming a flocculent region and a transition region between the SiC particles and the matrix. The tribological performance of the coating was also assessed using a ring-block sliding wear tester with GGr15 grinding ring under 490 and 980 N load. Cr-SiC particles-reinforced coating has a lower wear rate than the unreinforced coating.

Graphene as a transparent conducting and surface field layer in planar Si solar cells.

PubMed

Kumar, Rakesh; Mehta, Bodh R; Bhatnagar, Mehar; S, Ravi; Mahapatra, Silika; Salkalachen, Saji; Jhawar, Pratha

2014-01-01

This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene.

Facile transfer of thickness controllable poly(methyl methacrylate) patterns on a nanometer scale onto SiO2 substrates via microcontact printing combined with simplified Langmuir-Schaefer technique.

PubMed

Kim, Yong-Kwan; Kim, Dae-Il; Park, Jaehyun; Shin, Gunchul; Kim, Gyu Tae; Ha, Jeong Sook

2008-12-16

We report on the facile patterning of poly(methyl methacrylate) (PMMA) layers onto SiO2 substrates via microcontact printing combined with the simplified Langmuir-Schaefer (LS) technique. Langmuir film of PMMA was formed just by dropping a dilute PMMA solution onto the air/water surface in a glass Petri dish via self-assembly, and it was used as an ink for the patterned poly(dimethylsilioxane) (PDMS) stamp. The transferred film properties were systematically investigated with variation of postannealing temperature, molecular weight of PMMA, and the inking number. The patterned PMMA film surface was smooth with no vacancy defect in a few micrometers scale AFM images over the whole film area after post-annealing process. The thickness of the PMMA patterns was controlled on the nanometer scale by the number of inkings of the LS layer of PMMA on the PDMS stamp. By using the PMMA patterns as a barrier and a sacrificial layer against the chemical etching and metal deposition, SiO2 and metal patterns were fabricated, respectively. The PMMA layers also worked as a passivation layer against the patterning of V2O5 nanowires and the selective adsorption of single-walled carbon nanotubes (SWCNTs). We also fabricated thin film transistors using patterned SWCNTs with different percolation states and investigated the electrical properties.

Role of magnetic exchange interaction due to magnetic anisotropy on inverse spin Hall voltage at FeSi3%/Pt thin film bilayer interface

NASA Astrophysics Data System (ADS)

Shah, Jyoti; Ahmad, Saood; Chaujar, Rishu; Puri, Nitin K.; Negi, P. S.; Kotnala, R. K.

2017-12-01

In our recent studies inverse spin Hall voltage (ISHE) was investigated by ferromagnetic resonance (FMR) using bilayer FeSi3%/Pt thin film prepared by pulsed laser deposition (PLD) technique. In ISHE measurement microwave signal was applied on FeSi3% film along with DC magnetic field. Higher magnetization value along the film-plane was measured by magnetic hysteresis (M-H) loop. Presence of magnetic anisotropy has been obtained by M-H loop which showed easy direction of magnetization when applied magnetic field is parallel to the film plane. The main result of this study is that FMR induced inverse spin Hall voltage 12.6 μV at 1.0 GHz was obtained across Pt layer. Magnetic exchange field at bilayer interface responsible for field torque was measured 6 × 1014 Ω-1 m-2 by spin Hall magnetoresistance. The damping torque and spin Hall angle have been evaluated as 0.084 and 0.071 respectively. Presence of Si atom in FeSi3% inhomogenize the magnetic exchange field among accumulated spins at bilayer interface and feebly influenced by spin torque of FeSi3% layer. Weak field torque suppresses the spin pumping to Pt layer thus low value of inverse spin Hall voltage is obtained. This study provides an excellent opportunity to investigate spin transfer torque effect, thus motivating a more intensive experimental effort for its utilization at maximum potential. The improvement in spin transfer torque may be useful in spin valve, spin battery and spin transistor application.

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu; Yang, Mo

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heatmore » transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.« less

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

NASA Astrophysics Data System (ADS)

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2013-12-01

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

Unintentional consequences of dual mode plasma reactors: Implications for upscaling lab-record silicon surface passivation by silicon nitride

NASA Astrophysics Data System (ADS)

Tong, Jingnan; To, Alexander; Lennon, Alison; Hoex, Bram

2017-08-01

Silicon nitride (SiN x ) synthesised by low-temperature plasma enhanced chemical vapour deposition (PECVD) is the most extensively used antireflection coating for crystalline silicon solar cells because of its tunable refractive index in combination with excellent levels of surface and bulk passivation. This has attracted a significant amount of research on developing SiN x films towards an optimal electrical and optical performance. Typically, recipes are first optimised in lab-scale reactors and subsequently, the best settings are transferred to high-throughput reactors. In this paper, we show that for one particular, but widely used, PECVD reactor configuration this upscaling is severely hampered by an important experimental artefact. Specifically, we report on the unintentional deposition of a dual layer structure in a dual mode AK 400 plasma reactor from Roth & Rau which has a significant impact on its surface passivation performance. It is found that the radio frequency (RF) substrate bias ignites an unintentional depositing plasma before the ignition of the main microwave (MW) plasma. This RF plasma deposits a Si-rich intervening SiN x layer (refractive index = 2.4) while using a recipe for stoichiometric SiN x . This layer was found to be 18 nm thick in our case and had an extraordinary impact on the Si surface passivation, witnessed by a reduction in effective surface recombination velocity from 22.5 to 6.2 cm/s. This experimental result may explain some “out of the ordinary” excellent surface passivation results reported recently for nearly stoichiometric SiN x films and has significant consequences when transferring these results to high-throughput deposition systems.

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

NASA Astrophysics Data System (ADS)

Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

2016-07-01

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

2018-05-01

GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

NASA Astrophysics Data System (ADS)

Kar, Debjit; Das, Debajyoti

2016-07-01

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

Microporous layer based on SiC for high temperature proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Lobato, Justo; Zamora, Héctor; Cañizares, Pablo; Plaza, Jorge; Rodrigo, Manuel Andrés

2015-08-01

This work reports the evaluation of Silicon Carbide (SiC) for its application in microporous layers (MPL) of HT-PEMFC electrodes and compares results with those obtained using conventional MPL based on Vulcan XC72. Influence of the support load on the MPL prepared with SiC was evaluated, and the MPL were characterized by XRD, Hg porosimetry and cyclic voltammetries. In addition, a short lifetest was carried out to evaluate performance in accelerated stress conditions. Results demonstrate that SiC is a promising alternative to carbonaceous materials because of its higher electrochemical and thermal stability and the positive effect on mass transfer associated to its different pore size distribution. Ohmic resistance is the most significant challenge to be overcome in further studies.

Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter

NASA Astrophysics Data System (ADS)

Kihara, Takashi; Harada, Toshihiro; Kato, Masahiro; Nakano, Kiyoshi; Murakami, Osamu; Kikusui, Takefumi; Koshida, Nobuyoshi

2006-01-01

As one of the functional properties of ultrasound generator based on efficient thermal transfer at the nanocrystalline silicon (nc-Si) layer surface, its potential as an ultrasonic simulator of vocalization signals is demonstrated by using the acoustic data of mouse-pup calls. The device composed of a surface-heating thin-film electrode, an nc-Si layer, and a single-crystalline silicon (c-Si) wafer, exhibits an almost completely flat frequency response over a wide range without any mechanical surface vibration systems. It is shown that the fabricated emitter can reproduce digitally recorded ultrasonic mouse-pups vocalizations very accurately in terms of the call duration, frequency dispersion, and sound pressure level. The thermoacoustic nc-Si device provides a powerful physical means for the understanding of ultrasonic communication mechanisms in various living animals.

Doped Si nanoparticles with conformal carbon coating and cyclized-polyacrylonitrile network as high-capacity and high-rate lithium-ion battery anodes.

PubMed

Xie, Ming; Piper, Daniela Molina; Tian, Miao; Clancey, Joel; George, Steven M; Lee, Se-Hee; Zhou, Yun

2015-09-11

Doped Si nanoparticles (SiNPs) with conformal carbon coating and cyclized-polyacrylonitrile (PAN) network displayed capacities of 3500 and 3000 mAh g(-1) at C/20 and C/10, respectively. At 1 C, the electrode preserves a specific discharge capacity of ∼1500 mAh g(-1) for at least 60 cycles without decay. Al2O3 atomic layer deposition (ALD) helps improve the initial Coulombic efficiency (CE) to 85%. The dual coating of conformal carbon and cyclized-PAN help alleviate volume change and facilitate charge transfer. Ultra-thin Al2O3 ALD layers help form a stable solid electrolyte interphase interface.

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

NASA Technical Reports Server (NTRS)

Das, Kalyan; Hall, Harvey

1999-01-01

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

Evaluation of stress stabilities in amorphous In-Ga-Zn-O thin-film transistors: Effect of passivation with Si-based resin

NASA Astrophysics Data System (ADS)

Ochi, Mototaka; Hino, Aya; Goto, Hiroshi; Hayashi, Kazushi; Fujii, Mami N.; Uraoka, Yukiharu; Kugimiya, Toshihiro

2018-02-01

Fabrication process conditions of a passivation (PV) layer correlated with stress stabilities of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In etch-stop layer (ESL)-TFTs, by inserting a Si-based resin between SiN x and SiO x PV layers, the peak intensity in the photoinduced transient spectroscopy (PITS) spectrum was notably reduced. This suggested the suppression of hydrogen incorporation into a-IGZO, which led to the improvement of stability under negative bias thermal illumination stress (NBTIS). In contrast, the hydrogen-related defects in the a-IGZO were easily formed by the back-channel etch (BCE) process. Furthermore, it was found that, under NBTIS, the transfer curves of the BCE-TFTs shifted in parallel owing to the positive fixed charge located in the back channel of the a-IGZO TFTs. The hump-shaped shift increased with stress time. This is because hydrogen atoms located at the back-channel surfaces of the a-IGZO and/or PV layers were incorporated into the channel region of the BCE-TFTs and induced the hydrogen-related defects.

Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de; Nagel, Robin; Albes, Tim

2016-04-14

Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiO{sub x}/p{sup +}-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p{sup +}-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiO{sub x}-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p{sup +}-Si by our transfer protocol. Third, the fabricated nanodevices are alsomore » characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time and power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiO{sub x}-layers.« less

29Si-NMR study of magnetic anisotropy and hyperfine interactions in the uranium-bsed ferromagnet UNiSi2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Hironori; Baek, Seung H; Bauer, Eric D

2009-01-01

UNiSi{sub 2} orders ferromagnetically below T{sub Curie} = 95 K. This material crystallizes in the orthorhombic CeNiSi{sub 2}-type structure. The uranium atoms form double-layers, which are stacked along the crystallographic b axis (the longest axis). From magnetization measurement the easy (hard) magnetization axis is found to be the c axis (b axis). {sup 29}Si-NMR measurements have been performed in the paramagnetic state. In UNiSi{sub 2}, two crystallographic Si sites exist with orthorhombic local symmetry. The Knight shifts on each Si site have been estimated from the spectra of random and oriented powders. The transferred hyperfine couplings have been also derived.more » It is found that the transferred hyperfine coupling constants on each Si site are nearly isotropic, and that their Knight shift anisotropy comes from that of the bulk susceptibility. The nuclear-spin lattice relaxation rate 1/T{sub 1} shows temperature-independent behavior, which indicates the existence of localized 5f electron.« less

Transfer of Graphene Layers Grown on SiC Wafers to Other Substrates and Their Integration into Field Effect Transistors

NASA Astrophysics Data System (ADS)

Unarunotai, Sakulsuk; Murata, Yuya; Chialvo, Cesar; Kim, Hoon-Sik; MacLaren, Scott; Mason, Nadya; Petrov, Ivan; Rogers, John

2010-03-01

An approach to produce graphene films by epitaxial growth on silicon carbide substrate is promising, but its current implementation requires the use of SiC as the device substrate. We present a simple method for transferring epitaxial sheets of graphene on SiC to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of Gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ˜100 cm^2/V-s, and negligible influence of resistance at the contacts. This work was supported by the U.S. DOE, under Award No. DE-FG02-07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

Determination of a refractive index and an extinction coefficient of standard production of CVD-graphene.

PubMed

Ochoa-Martínez, Efraín; Gabás, Mercedes; Barrutia, Laura; Pesquera, Amaia; Centeno, Alba; Palanco, Santiago; Zurutuza, Amaia; Algora, Carlos

2015-01-28

The refractive index and extinction coefficient of chemical vapour deposition grown graphene are determined by ellipsometry analysis. Graphene films were grown on copper substrates and transferred as both monolayers and bilayers onto SiO2/Si substrates by using standard manufacturing procedures. The chemical nature and thickness of residual debris formed after the transfer process were elucidated using photoelectron spectroscopy. The real layered structure so deduced has been used instead of the nominal one as the input in the ellipsometry analysis of monolayer and bilayer graphene, transferred onto both native and thermal silicon oxide. The effect of these contamination layers on the optical properties of the stacked structure is noticeable both in the visible and the ultraviolet spectral regions, thus masking the graphene optical response. Finally, the use of heat treatment under a nitrogen atmosphere of the graphene-based stacked structures, as a method to reduce the water content of the sample, and its effect on the optical response of both graphene and the residual debris layer are presented. The Lorentz-Drude model proposed for the optical response of graphene fits fairly well the experimental ellipsometric data for all the analysed graphene-based stacked structures.

Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

NASA Astrophysics Data System (ADS)

Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

2015-12-01

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

The influence of photoelectron processes in a semiconductor substrate on the adsorption of polycationic and polyanionic molecules

NASA Astrophysics Data System (ADS)

Stetsyura, S. V.; Kozlowski, A. V.

2017-03-01

White-light illumination during the adsorption of polyanionic molecules of glucose oxidase (GO x ) enzyme on the surface of p-Si/SiO2/polyethylenimine structure leads to a threefold decrease in the surface concentration of GO x molecules. Same illumination during the GO x adsorption on the n-Si/SiO2/PEI structure leads to a sevenfold increase in the surface concentration of enzyme molecules. Changes in the amount of adsorbed GO x molecules depending on the intensity of irradiation are explained by electron transfer processes and recharging of electronic states at the Si/SiO2 interface and within SiO2 layer.

Graphene as a transparent conducting and surface field layer in planar Si solar cells

PubMed Central

2014-01-01

This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene. PMID:25114642

Spotting 2D atomic layers on aluminum nitride thin films.

PubMed

Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

2015-10-23

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

Micro-pyramidal structure fabrication on polydimethylsiloxane (PDMS) by Si (100) KOH wet etching

NASA Astrophysics Data System (ADS)

Hwang, Shinae; Lim, Kyungsuk; Shin, Hyeseon; Lee, Seongjae; Jang, Moongyu

2017-10-01

A high degree of accuracy in bulk micromachining is essential to fabricate micro-electro-mechanical systems (MEMS) devices. A series of etching experiments is carried out using 40 wt% KOH solutions at the constant temperature of 70 °C. Before wet etching, SF6 and O2 are used as the dry etching gas to etch the masking layers of a 100 nm thick Si3N4 and SiO2, respectively. The experimental results indicate that (100) silicon wafer form the pyramidal structures with (111) single crystal planes. All the etch profiles are analyzed using Scanning Electron Microscope (SEM) and the wet etch rates depend on the opening sizes. The manufactured pyramidal structures are used as the pattern of silicon mold. After a short hardening of coated polydimethylsiloxane (PDMS) layer, micro pyramidal structures are easily transferred to PDMS layer.

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

DTIC Science & Technology

2011-11-01

stack between the GaN and Substrate layers. The University of Bristol recently reported that this TBR in commercial devices on Silicon Carbide ( SiC ...Circuit RF Radio Frequency PA Power Amplifier SiC Silicon Carbide FEA Finite Element Analysis heff Effective Heat transfer Coefficient (W/m 2 K...substrate material switched from sapphire to silicon , and by another factor of two from silicon to SiC . TABLE 1: SAMPLE RESULTS FROM DOUGLAS ET AL. FOR

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

PubMed

Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

2017-12-01

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

Reflectance analysis of porosity gradient in nanostructured silicon layers

NASA Astrophysics Data System (ADS)

Jurečka, Stanislav; Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

2017-12-01

In this work we study optical properties of nanostructured layers formed on silicon surface. Nanostructured layers on Si are formed in order to reach high suppression of the light reflectance. Low spectral reflectance is important for improvement of the conversion efficiency of solar cells and for other optoelectronic applications. Effective method of forming nanostructured layers with ultralow reflectance in a broad interval of wavelengths is in our approach based on metal assisted etching of Si. Si surface immersed in HF and H2O2 solution is etched in contact with the Pt mesh roller and the structure of the mesh is transferred on the etched surface. During this etching procedure the layer density evolves gradually and the spectral reflectance decreases exponentially with the depth in porous layer. We analyzed properties of the layer porosity by incorporating the porosity gradient into construction of the layer spectral reflectance theoretical model. Analyzed layer is splitted into 20 sublayers in our approach. Complex dielectric function in each sublayer is computed by using Bruggeman effective media theory and the theoretical spectral reflectance of modelled multilayer system is computed by using Abeles matrix formalism. Porosity gradient is extracted from the theoretical reflectance model optimized in comparison to the experimental values. Resulting values of the structure porosity development provide important information for optimization of the technological treatment operations.

SiO2-coated LiNi0.915Co0.075Al0.01O2 cathode material for rechargeable Li-ion batteries.

PubMed

Zhou, Pengfei; Zhang, Zhen; Meng, Huanju; Lu, Yanying; Cao, Jun; Cheng, Fangyi; Tao, Zhanliang; Chen, Jun

2016-11-24

We reported a one-step dry coating of amorphous SiO 2 on spherical Ni-rich layered LiNi 0.915 Co 0.075 Al 0.01 O 2 (NCA) cathode materials. Combined characterization of XRD, EDS mapping, and TEM indicates that a SiO 2 layer with an average thickness of ∼50 nm was uniformly coated on the surface of NCA microspheres, without inducing any change of the phase structure and morphology. Electrochemical tests show that the 0.2 wt% SiO 2 -coated NCA material exhibits enhanced cyclability and rate properties, combining with better thermal stability compared with those of pristine NCA. For example, 0.2 wt% SiO 2 -coated NCA delivers a high specific capacity of 181.3 mA h g -1 with a capacity retention of 90.7% after 50 cycles at 1 C rate and 25 °C. Moreover, the capacity retention of this composite at 60 °C is 12.5% higher than that of pristine NCA at 1 C rate after 50 cycles. The effects of SiO 2 coating on the electrochemical performance of NCA are investigated by EIS, CV, and DSC tests, the improved performance is attributed to the surface coating layer of amorphous SiO 2 , which effectively suppresses side reactions between NCA and electrolytes, decreases the SEI layer resistance, and retards the growth of charge-transfer resistance, thus enhancing structural and cycling stability of NCA.

Electrical interface characteristics (I-V), optical time of flight measurements, and the x-ray (20 keV) signal response of amorphous-selenium/crystalline-silicon heterojunction structures

NASA Astrophysics Data System (ADS)

Hunter, David M.; Ho, Chu An; Belev, George; De Crescenzo, Giovanni; Kasap, Safa O.; Yaffe, Martin J.

2011-03-01

We have investigated the dark current, optical TOF (time of flight) properties, and the X-ray response of amorphousselenium (a-Se)/crystalline-silicon (c-Si) heterostructures for application in digital radiography. The structures have been studied to determine if an x-ray generated electron signal, created in an a-Se layer, could be directly transferred to a c-Si based readout device such as a back-thinned CCD (charge coupled device). A simple first order band-theory of the structure indicates that x-ray generated electrons should transfer from the a-Se to the c-Si, while hole transfer from p-doped c-Si to the a-Se should be blocked, permitting a low dark signal as required. The structures we have tested have a thin metal bias electrode on the x-ray facing side of the a-Se which is deposited on the c-Si substrate. The heterostructures made with pure a-Se deposited on epitaxial p-doped (5×10 14 cm-3) c-Si exhibited very low dark current of 15 pA cm-2 at a negative bias field of 10 V μm-1 applied to the a-Se. The optical TOF (time of flight) measurements show that the applied bias drops almost entirely across the a-Se layer and that the a-Se hole and electron mobilities are within the range of commonly accepted values. The x-ray signal measurements demonstrate the structure has the expected x-ray quantum efficiency. We have made a back-thinned CCD coated with a-Se and although most areas of the device show a poor x-ray response, it does contain small regions which do work properly with the expected x-ray sensitivity. Improved understanding of the a-Se/c-Si interface and preparation methods should lead to properly functioning devices.

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

PubMed

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

Transfer of vertically aligned carbon nanofibers to polydimethylsiloxane (PDMS) while maintaining their alignment and impalefection functionality.

PubMed

Pearce, Ryan C; Railsback, Justin G; Anderson, Bryan D; Sarac, Mehmet F; McKnight, Timothy E; Tracy, Joseph B; Melechko, Anatoli V

2013-02-01

Vertically aligned carbon nanofibers (VACNFs) are synthesized on Al 3003 alloy substrates by direct current plasma-enhanced chemical vapor deposition. Chemically synthesized Ni nanoparticles were used as the catalyst for growth. The Si-containing coating (SiN(x)) typically created when VACNFs are grown on silicon was produced by adding Si microparticles prior to growth. The fiber arrays were transferred to PDMS by spin coating a layer on the grown substrates, curing the PDMS, and etching away the Al in KOH. The fiber arrays contain many fibers over 15 μm (long enough to protrude from the PDMS film and penetrate cell membranes) and SiN(x) coatings as observed by SEM, EDX, and fluorescence microscopy. The free-standing array in PDMS was loaded with pVENUS-C1 plasmid and human brain microcapillary endothelial (HBMEC) cells and was successfully impalefected.

Dark field photoelectron emission microscopy of micron scale few layer graphene

NASA Astrophysics Data System (ADS)

Barrett, N.; Conrad, E.; Winkler, K.; Krömker, B.

2012-08-01

We demonstrate dark field imaging in photoelectron emission microscopy (PEEM) of heterogeneous few layer graphene (FLG) furnace grown on SiC(000-1). Energy-filtered, threshold PEEM is used to locate distinct zones of FLG graphene. In each region, selected by a field aperture, the k-space information is imaged using appropriate transfer optics. By selecting the photoelectron intensity at a given wave vector and using the inverse transfer optics, dark field PEEM gives a spatial distribution of the angular photoelectron emission. In the results presented here, the wave vector coordinates of the Dirac cones characteristic of commensurate rotations of FLG on SiC(000-1) are selected providing a map of the commensurate rotations across the surface. This special type of contrast is therefore a method to map the spatial distribution of the local band structure and offers a new laboratory tool for the characterisation of technically relevant, microscopically structured matter.

Initial stage of atomic layer deposition of 2D-MoS2 on a SiO2 surface: a DFT study.

PubMed

Shirazi, M; Kessels, W M M; Bol, A A

2018-06-20

In this study, we investigate the reactions involving Atomic Layer Deposition (ALD) of 2D-MoS2 from the heteroleptic precursor Mo(NMe2)2(NtBu)2 and H2S as the co-reagent on a SiO2(0001) surface by means of density functional theory (DFT). All dominant reaction pathways from the early stage of adsorption of each ALD reagent to the formation of bulk-like Mo and S at the surface are identified. In the metal pulse, proton transfer from terminal OH groups on the SiO2 to the physisorbed metal precursor increases the Lewis acidity of Mo and Lewis basicity of O, which gives rise to the chemical adsorption of the metal precursor. Proton transfer from the surface to the dimethylamido ligands leads to the formation and desorption of dimethylamine. In contrast, the formation and desorption of tert-butylamine is not energetically favorable. The tert-butylimido ligand can only be partially protonated in the metal pulse. In the sulphur pulse, co-adsorption and dissociation of H2S molecules give rise to the formation and desorption of tert-butylamine. Through the calculated activation energies, the cooperation between H2S molecules ('cooperative' mechanism) is shown to have a profound influence on the formation and desorption of tert-butylamine, which are crucial steps in the initial ALD deposition of 2D-MoS2 on SiO2. The cyclic ALD reactions give rise to the formation of a buffer layer which might have important consequences for the electrical and optical properties on the 2D layer formed in the subsequent homodeposition.

Design and Synthesis of Hierarchical SiO2@C/TiO2 Hollow Spheres for High-Performance Supercapacitors.

PubMed

Zhang, Ying; Zhao, Yan; Cao, Shunsheng; Yin, Zhengliang; Cheng, Li; Wu, Limin

2017-09-06

TiO 2 has been widely investigated as an electrode material because of its long cycle life and good durability, but the relatively low theoretical capacity restricts its practical application. Herein, we design and synthesize novel hierarchical SiO 2 @C/TiO 2 (HSCT) hollow spheres via a template-directed method. These unique HSCT hollow spheres combine advantages from both TiO 2 such as cycle stability and SiO 2 with a high accessible area and ionic transport. In particular, the existence of a C layer is able to enhance the electrical conductivity. The SiO 2 layer with a porous structure can increase the ion diffusion channels and accelerate the ion transfer from the outer to the inner layers. The electrochemical measurements demonstrate that the HSCT-hollow-sphere-based electrode manifests a high specific capacitance of 1018 F g -1 at 1 A g -1 which is higher than those for hollow TiO 2 (113 F g -1 ) and SiO 2 /TiO 2 (252 F g -1 ) electrodes, and substantially higher than those of all the previously reported TiO 2 -based electrodes.

Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-07-14

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high densitymore » tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10{sup −1}–1.4 × 10{sup −2} S cm{sup −1}, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.« less

PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

PubMed Central

Van Ngoc, Huynh; Qian, Yongteng; Han, Suk Kil; Kang, Dae Joon

2016-01-01

We have explored a facile technique to transfer large area 2-Dimensional (2D) materials grown by chemical vapor deposition method onto various substrates by adding a water-soluble Polyvinyl Alcohol (PVA) layer between the polymethyl-methacrylate (PMMA) and the 2D material film. This technique not only allows the effective transfer to an arbitrary target substrate with a high degree of freedom, but also avoids PMMA etching thereby maintaining the high quality of the transferred 2D materials with minimum contamination. We applied this method to transfer various 2D materials grown on different rigid substrates of general interest, such as graphene on copper foil, h-BN on platinum and MoS2 on SiO2/Si. This facile transfer technique has great potential for future research towards the application of 2D materials in high performance optical, mechanical and electronic devices. PMID:27616038

Analysis of simplified heat transfer models for thermal property determination of nano-film by TDTR method

NASA Astrophysics Data System (ADS)

Wang, Xinwei; Chen, Zhe; Sun, Fangyuan; Zhang, Hang; Jiang, Yuyan; Tang, Dawei

2018-03-01

Heat transfer in nanostructures is of critical importance for a wide range of applications such as functional materials and thermal management of electronics. Time-domain thermoreflectance (TDTR) has been proved to be a reliable measurement technique for the thermal property determinations of nanoscale structures. However, it is difficult to determine more than three thermal properties at the same time. Heat transfer model simplifications can reduce the fitting variables and provide an alternative way for thermal property determination. In this paper, two simplified models are investigated and analyzed by the transform matrix method and simulations. TDTR measurements are performed on Al-SiO2-Si samples with different SiO2 thickness. Both theoretical and experimental results show that the simplified tri-layer model (STM) is reliable and suitable for thin film samples with a wide range of thickness. Furthermore, the STM can also extract the intrinsic thermal conductivity and interfacial thermal resistance from serial samples with different thickness.

Dynamics of molecular excitons near a semiconductor surface studied by fluorescence quenching of polycrystalline tetracene on silicon

NASA Astrophysics Data System (ADS)

Piland, Geoffrey B.; Burdett, Jonathan J.; Hung, Tzu-Yao; Chen, Po-Hsun; Lin, Chi-Feng; Chiu, Tien-Lung; Lee, Jiun-Haw; Bardeen, Christopher J.

2014-05-01

Tetracene, a molecule that undergoes singlet fission, is deposited on Si with variable thickness LiF spacer layers. In agreement with earlier work (Hayashi et al., 1983 [10]), the fluorescence intensity of the tetracene greatly increases as the LiF thickness approaches 100 nm. This increase is partly due to a 30% increase in the prompt fluorescence decay time but mostly results from weaker coupling of the luminescence into the Si substrate. A decrease in the prompt fluorescence lifetime is observed as the tetracene thickness is increased on bare Si. We find no evidence for triplet energy transfer to the Si.

Fabrication of high aspect ratio tungsten nanostructures on ultrathin c-Si membranes for extreme UV applications

NASA Astrophysics Data System (ADS)

Delachat, F.; Le Drogoff, B.; Constancias, C.; Delprat, S.; Gautier, E.; Chaker, M.; Margot, J.

2016-01-01

In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

RIE-based Pattern Transfer Using Nanoparticle Arrays as Etch Masks

NASA Astrophysics Data System (ADS)

Hogg, Chip; Majetich, Sara A.; Bain, James A.

2009-03-01

Nanomasking is used to transfer the pattern of a self-assembled array of nanoparticles into an underlying thin film, for potential use as bit-patterned media. We have used this process to investigate the limits of pattern transfer, as a function of gap size in the pattern. Reactive Ion Etching (RIE) is our chosen process, since the gaseous reaction products and high chemical selectivity are ideal features for etching very small gaps. Interstitial surfactant is removed with an O2 plasma, allowing the etchants to penetrate between the particles. Their pattern is transferred into an intermediate SiO2 mask using a CH4-based RIE. This patterned SiO2 layer is finally used as a mask for the MeOH-based RIE which patterns the magnetic film. We present cross-sectional TEM characterization of the etch profiles, as well as magnetic characterization of the film before and after patterning.

C incorporation and segregation during Si 1- yC y/Si( 0 0 1 ) gas-source molecular beam epitaxy from Si 2H 6 and CH 3SiH 3

NASA Astrophysics Data System (ADS)

Foo, Y. L.; Bratland, K. A.; Cho, B.; Soares, J. A. N. T.; Desjardins, P.; Greene, J. E.

2002-08-01

We have used in situ D 2 temperature-programmed desorption (TPD) to probe C incorporation and surface segregation kinetics, as well as hydrogen desorption pathways, during Si 1- yC y(0 0 1) gas-source molecular beam epitaxy from Si 2H 6/CH 3SiH 3 mixtures at temperatures Ts between 500 and 650 °C. Parallel D 2 TPD results from C-adsorbed Si(0 0 1) wafers exposed to varying CH 3SiH 3 doses serve as reference data. Si 1- yC y(0 0 1) layer spectra consist of three peaks: first-order β 1 at 515 °C and second-order β 2 at 405 °C, due to D 2 desorption from Si monodeuteride and dideuteride phases, as well as a new second-order C-induced γ 1 peak at 480 °C. C-adsorbed Si(0 0 1) samples with very high CH 3SiH 3 exposures yielded a higher-temperature TPD feature, corresponding to D 2 desorption from surface C atoms, which was never observed in Si 1- yC y(0 0 1) layer spectra. The Si 1- yC y(0 0 1) γ 1 peak arises due to desorption from Si monodeuteride species with C backbonds. γ 1 occurs at a lower temperature than β 1 reflecting the lower D-Si * bond strength, where Si * represents surface Si atoms bonded to second-layer C atoms, as a result of charge transfer from dangling bonds. The total integrated monohydride (β 1+γ 1) intensity, and hence the dangling bond density, remains constant with y indicating that C does not deactivate surface dangling bonds as it segregates to the second-layer during Si 1- yC y(0 0 1) growth. Si * coverages increase with y at constant Ts and with Ts at constant y. The positive Ts-dependence shows that C segregation is kinetically limited at Ts⩽650 °C. D 2 desorption activation energies from β 1, γ 1 and β 2 sites are 2.52, 2.22 and 1.88 eV.

Model Implementation of Boron Removal Using CaCl2-CaO-SiO2 Slag System for Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Chen, Hui; Wang, Ye; Zheng, Wenjia; Li, Qincan; Yuan, Xizhi; Morita, Kazuki

2017-12-01

A new CaCl2-CaO-SiO2 slag system was recently proposed to remove boron from metallurgy-grade silicon by oxidized chlorination and evaporation. To further investigate the boron transformation process at a high temperature, a model implementation to present the transfer of boron from molten silicon to the gas phase via slag is introduced. Heat transfer, fluid flow, the chemical reactions at the interface and surface, the mass transfer and diffusion of boron in the molten silicon and slag, and the evaporation of BOCl and CaCl2 were coupled in this model. After the confirmation of the thermal field, other critical parameters, including the boron partition ratios ( L B) for this slag from 1723 K to 1823 K (1450 °C to 1550 °C), the thicknesses of the velocity boundary layer at the surface and interface, the mass transfer coefficients of the boundary layer at the surface and interface, and partial pressure of BOCl in the gas phase were analyzed to determine the rate-limiting step. To verify this model implementation, boron removal experiments were carried out at various temperatures and with various initial mass ratios of slag to silicon ( μ). The evaporation rate of CaCl2 was also measured by thermogravimetry analysis (TGA).

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage.

PubMed

Amjadipour, Mojtaba; MacLeod, Jennifer; Lipton-Duffin, Josh; Iacopi, Francesca; Motta, Nunzio

2017-08-25

Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga + beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.

Revealing the semiconductor–catalyst interface in buried platinum black silicon photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguiar, Jeffery A.; Anderson, Nicholas C.; Neale, Nathan R.

2016-01-01

Nanoporous 'black' silicon semiconductors interfaced with buried platinum nanoparticle catalysts have exhibited stable activity for photoelectrochemical hydrogen evolution even after months of exposure to ambient conditions. The mechanism behind this stability has not been explained in detail, but is thought to involve a Pt/Si interface free from SiOx layer that would adversely affect interfacial charge transfer kinetics. In this paper, we resolve the chemical composition and structure of buried Pt/Si interfaces in black silicon photocathodes from a micron to sub-nanometer level using aberration corrected analytical scanning transmission electron microscopy. Through a controlled electrodeposition of copper on samples aged for onemore » month in ambient conditions, we demonstrate that the main active catalytic sites are the buried Pt nanoparticles located below the 400-800 nm thick nanoporous SiOx layer. Though hydrogen production performance degrades over 100 h under photoelectrochemical operating conditions, this burying strategy preserves an atomically clean catalyst/Si interface free of oxide or other phases under air exposure and provides an example of a potential method for stabilizing silicon photoelectrodes from oxidative degradation in photoelectrochemical applications.« less

He + and Ar + bombardment induced chemical changes in CrOSi layers

NASA Astrophysics Data System (ADS)

Bertóti, I.; Tóth, A.; Mohai, M.; Kelly, R.; Marletta, G.

1996-08-01

The effects of 2 keV He + and Ar + bombardment on the surface composition and on the short range chemical structure of sputter deposited amorphous CrOSi layers (with approx. 1 : 1 : 1 atomic ratio) have been studied by XPS. It was found that Ar + bombardment causes an essentially complete reduction of chromium to metallic state (Cr 0) whereas it was partly oxidized in the as-received sample. At the same time about 30% of the oxidized silicon is converted to Si 0 which is stabilized by forming SiCr bonds. He + bombardment, on the contrary, leads to the disruption of SiCr bonds formed by the preceding Ar + bombardment, converting Cr 0 and Si 0 essentially to Cr 3+O, Cr 4+O and Si 4+O, and, at the same time raises the surface oxygen concentration up to three times of the nominal bulk value. The observed transformations are discussed, in connection with the great differences in energy deposition, in terms of direct energy transfer and of ion induced diffusion, together with a significant contribution from thermodynamic driving forces.

High-Si content BARC for dual-BARC systems such as trilayer patterning

NASA Astrophysics Data System (ADS)

Kennedy, Joseph; Xie, Song-Yuan; Wu, Ze-Yu; Katsanes, Ron; Flanigan, Kyle; Lee, Kevin; Slezak, Mark; Liu, Zhi; Lin, Shang-Ho

2009-03-01

This work discusses the requirements and performance of Honeywell's middle layer material, UVAS, for tri-layer patterning. UVAS is a high Si content polymer synthesized directly from Si containing starting monomer components. The monomers are selected to produce a film that meets the requirements as a middle layer for tri-layer patterning (TLP) and gives us a level of flexibility to adjust the properties of the film to meet the customer's specific photoresist and patterning requirements. Results of simulations of the substrate reflectance versus numerical aperture, UVAS thickness, and under layer film are presented. ArF photoresist line profiles and process latitude versus UVAS bake at temperatures as low as 150ºC are presented and discussed. Immersion lithographic patterning of ArF photoresist line space and contact hole features will be presented. A sequence of SEM images detailing the plasma etch transfer of line space photoresist features through the middle and under layer films comprising the TLP film stack will be presented. Excellent etch selectivity between the UVAS and the organic under layer film exists as no edge erosion or faceting is observed as a result of the etch process. A detailed study of the impact of a PGMEA solvent photoresist rework process on the lithographic process window of a TLP film stack was performed with the results indicating that no degradation to the UVAS film occurs.

Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor

NASA Astrophysics Data System (ADS)

Qinwen, XUE; Xiaohua, WANG; Chenglin, LIU; Youwen, LIU

2018-03-01

The tunable terahertz (THz) filter has been designed and studied, which is composed of 1D photonic crystal (PC) containing a defect layer of semiconductor GaAs. The analytical solution of 1D defective PC (1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO2) N /GaAs/(SiO2/Si) N /air is far higher than in asymmetric structure of air/(Si/SiO2) N /GaAs/(Si/SiO2) N /air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.

Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

PubMed

Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

2016-07-29

The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

PubMed Central

Mizuno, Hidenori; Sai, Hitoshi; Matsubara, Koji; Takato, Hidetaka; Kondo, Michio

2015-01-01

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (µc-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated µc-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach. PMID:26575244

A tunable microwave slot antenna based on graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragoman, Mircea; Aldrigo, Martino; Vasilache, D.

The paper presents the experimental and modeling results of a microwave slot antenna in a coplanar configuration based on graphene. The antennas are fabricated on a 4 in. high-resistivity Si wafer, with a ∼300 nm SiO{sub 2} layer grown through thermal oxidation. A CVD grown graphene layer is transferred on the SiO{sub 2}. The paper shows that the reflection parameter of the antenna can be tuned by a DC voltage. 2D radiation patterns at various frequencies in the X band (8–12 GHz) are then presented using as antenna backside a microwave absorbent and a metalized surface. Although the radiation efficiency is lower thanmore » a metallic antenna, the graphene antenna is a wideband antenna while the metal antennas with the same geometry and working at the same frequencies are narrowband.« less

An ab-initio coupled mode theory for near field radiative thermal transfer.

PubMed

Chalabi, Hamidreza; Hasman, Erez; Brongersma, Mark L

2014-12-01

We investigate the thermal transfer between finite-thickness planar slabs which support surface phonon polariton modes (SPhPs). The thickness-dependent dispersion of SPhPs in such layered materials provides a unique opportunity to manipulate and enhance the near field thermal transfer. The key accomplishment of this paper is the development of an ab-initio coupled mode theory that accurately describes all of its thermal transfer properties. We illustrate how the coupled mode parameters can be obtained in a direct fashion from the dispersion relation of the relevant modes of the system. This is illustrated for the specific case of a semi-infinite SiC substrate placed in close proximity to a thin slab of SiC. This is a system that exhibits rich physics in terms of its thermal transfer properties, despite the seemingly simple geometry. This includes a universal scaling behavior of the thermal conductance with the slab thickness and spacing. The work highlights and further increases the value of coupled mode theories in rapidly calculating and intuitively understanding near-field transfer.

Experimental investigations of quantum confined silicon nanoparticle light emitting devices

NASA Astrophysics Data System (ADS)

Ligman, Rebekah Kristine

2007-12-01

As the demands on our world's energy resources continue to grow, alternative high efficiency materials such as quantum confined silicon nanoparticles (Si nps) are desirable for their potential low cost application in white light illumination, in optical displays, and in on-chip optical interconnects. Many fabrication and passivation techniques exist that produce Si nps with high photogenerated quantum yield. However, high electrically generated Si np quantum efficiency has eluded our society. Predominantly due to the lack of a stable surface passivation and a device fabrication technique that preserves the Si np optical properties. To amend these deficiencies, the passivation of nonthermal plasma fabricated Si nps with a surface oxide grown under UV exposure was first investigated. Control over the surface oxidized Si np (Si/SiO2) passivation growth was demonstrated and the optical stability of Si/SiO2 nps was suitable for demonstrating Si np electroluminescence (EL). Two approaches for constructing hybrid organic light emitting diode (OLED) devices around nonthermal plasma fabricated Si nps were then investigated. Multilayer devices, composed of a nonthermal plasma fabricated Si np layer embedded within an OLED, were first studied. However, no EL from Si nps was obtained using the multilayer device architecture due to poor control over the Si np film thickness. Single layer polymer(Si/SiO2) hybrid devices, composed of nps randomly dispersed within an extrinsic conductive polymer, were then studied and EL from Si/SiO2 nps was obtained. The hybrid device optical and electrical response was enhanced over the control devices, possibly due to morphology changes induced by the Si/SiO2 nps. The energy transfer (ET) processes in single layer polymer(Si/SiO 2) hybrid devices were then investigated by imposing known spatial separations between the intrinsic conductive polymers and Si/SiO2 nps. No measurable Si/SiO2 np emission was observed from the intrinsic hybrid devices independent of the spatial separation, implying no ET occurs between the intrinsic polymers and Si/SiO2 nps. These results suggest the observed Si/SiO 2 np emission from extrinsic polymer(Si/SiO2) hybrid devices may be produced by direct carrier injection, Forster or Dexter ET mechanisms.

Measurement and Control of In-plane Surface Chemistry at the Silicon/Silicon Dioxide Interface

NASA Astrophysics Data System (ADS)

Gokce, Bilal

In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directions but also in real time. In this thesis work, I demonstrate both control and measurement of the oxidation of H-terminated Si(111). The nonlinear optical tool of Second-Harmonic-Generation (SHG) is used to show that Si oxidation in air is a two-stage process where the H of the "up" bonds of the outermost Si layer is replaced by OH, followed by O insertion into the "back" bonds. Detailed information about both stages is revealed by investigating the effect of uniaxial strain and carrier concentration on this chemical reaction. It is shown that even small amounts of strain manipulate the reaction kinetics of surface bonds significantly, with tensile strain enhancing oxidation and compressive strain retarding it. This dramatic change suggests a strain-driven charge transfer mechanism between Si--H up bonds and Si--Si back bonds in the outer layer of Si atoms. Data on differently doped samples reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si--Si back bonds relative to the Si--H up bonds while high concentrations of holes cause a greater increase in the reactivity of the Si--H up bonds than that of the Si--Si back bonds. However, the thicknesses of the natural oxides of all samples follow the same path and stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds, as determined by spectroscopic ellipsometry. Real-time measurement during SHG experiments is achieved by analyzing SHG anisotropy data with the anisotropic bond-charge model of nonlinear optics where peaks in the SHG spectrum are correlated with the near alignment of bonds to the direction of the excitation field.

First-principles study of spin-transfer torque in Co{sub 2}MnSi/Al/Co{sub 2}MnSi spin-valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Ling, E-mail: lingtang@zjut.edu.cn; Yang, Zejin, E-mail: zejinyang@zjut.edu.cn

The spin-transfer torque (STT) in Co{sub 2}MnSi(CMS)/Al/Co{sub 2}MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface the angular dependence of STT for CoCo/Al (the asymmetry parameter Λ≈4.5) is more skewed than that for MnSi/Al (Λ≈2.9), which suggests the clean CoCo/Al architecture is much more efficient for the application on radio frequency oscillation. We also find that even with interfacial disorder the spin-valve of half-metallic CMS still has a relatively large parameter Λ compared to that of conventional ferromagnet. In addition, for clean interfacemore » the in-plane torkance of MnSi/Al is about twice as large as that of CoCo/Al. However, as long as the degree of interfacial disorder is sufficiently large, the CoCo/Al and MnSi/Al will show approximately the same magnitude of in-plane torkance. Furthermore, our results demonstrate that CMS/Al/CMS system has very high efficiency of STT to switch the magnetic layer of spin-valve.« less

Pd/CeO2/SiC Chemical Sensors

NASA Technical Reports Server (NTRS)

Lu, Weijie; Collins, W. Eugene

2005-01-01

The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to thermal stability and, by contributing to transfer of electrons, would also contribute to sensitivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} frommore » the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to SiO{sub 2}. The comparison of C{sub 4}F{sub 8} and CHF{sub 3} only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions, precursor chemistry has a weak impact on etching selectivity. Surface chemistry analysis shows that surface fluorination and FC reduction take place during a single ALE cycle for FC depleted conditions. A fluorine rich carbon layer was observed on the Si{sub 3}N{sub 4} surface after ALE processes for which FC accumulation takes place. The angle resolved-XPS thickness calculations confirmed the results of the ellipsometry measurements in all cases.« less

A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

NASA Astrophysics Data System (ADS)

Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

2018-01-01

Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

Assessing the ability of mechanistic volatilization models to simulate soil surface conditions: a study with the Volt'Air model.

PubMed

Garcia, L; Bedos, C; Génermont, S; Braud, I; Cellier, P

2011-09-01

Ammonia and pesticide volatilization in the field is a surface phenomenon involving physical and chemical processes that depend on the soil surface temperature and water content. The water transfer, heat transfer and energy budget sub models of volatilization models are adapted from the most commonly accepted formalisms and parameterizations. They are less detailed than the dedicated models describing water and heat transfers and surface status. The aim of this work was to assess the ability of one of the available mechanistic volatilization models, Volt'Air, to accurately describe the pedo-climatic conditions of a soil surface at the required time and space resolution. The assessment involves: (i) a sensitivity analysis, (ii) an evaluation of Volt'Air outputs in the light of outputs from a reference Soil-Vegetation-Atmosphere Transfer model (SiSPAT) and three experimental datasets, and (iii) the study of three tests based on modifications of SiSPAT to establish the potential impact of the simplifying assumptions used in Volt'Air. The analysis confirmed that a 5 mm surface layer was well suited, and that Volt'Air surface temperature correlated well with the experimental measurements as well as with SiSPAT outputs. In terms of liquid water transfers, Volt'Air was overall consistent with SiSPAT, with discrepancies only during major rainfall events and dry weather conditions. The tests enabled us to identify the main source of the discrepancies between Volt'Air and SiSPAT: the lack of gaseous water transfer description in Volt'Air. They also helped to explain why neither Volt'Air nor SiSPAT was able to represent lower values of surface water content: current classical water retention and hydraulic conductivity models are not yet adapted to cases of very dry conditions. Given the outcomes of this study, we discuss to what extent the volatilization models can be improved and the questions they pose for current research in water transfer modeling and parameterization. Copyright © 2011 Elsevier B.V. All rights reserved.

Excitations in confined helium

NASA Astrophysics Data System (ADS)

Apaja, V.; Krotscheck, E.

2003-05-01

We design models for helium in matrices such as aerogel, Vycor, or Geltech from a manifestly microscopic point of view. For that purpose, we calculate the dynamic structure function of 4He on Si substrates and between two Si walls as a function of energy, momentum transfer, and the scattering angle. The angle-averaged results are in good agreement with the neutron scattering data; the remaining differences can be attributed to the simplified model used here for the complex pore structure of the materials. A focus of the present work is the detailed identification of coexisting layer modes and bulklike excitations, and, in the case of thick films, ripplon excitations. Involving essentially two-dimensional motion of atoms, the layer modes are sensitive to the scattering angle.

Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor

NASA Astrophysics Data System (ADS)

Rolim, Guilherme Koszeniewski; Corrêa, Silma Alberton; Galves, Lauren Aranha; Lopes, João Marcelo J.; Soares, Gabriel Vieira; Radtke, Cláudio

2018-01-01

Modifications of single layer graphene transferred to SiO2/Si substrates resulting from annealing in water vapor were investigated. Near edge X-ray absorption fine structure spectroscopy evidenced graphene puckering between 400 and 500 °C. Synchrotron radiation based X-ray photoelectron spectroscopy showed variation of sp2 and sp3C bonding configurations specially in this same temperature range. Moreover, oxygen related functionalities are formed as a result of water vapor annealing. Based on these results and complementary Raman and nuclear reaction analysis, one distinguishes three different regimes of water interaction with graphene concerning modifications of the graphene layer. In the low temperature range (200-400 °C), no prominent modification of graphene itself is observed. At higher temperatures (400-500 °C), to accommodate newly formed oxygen functionalities, the flat and continuous sp2 bonding network of graphene is disrupted, giving rise to a puckered layer. For 600 °C and above, shrinking of graphene domains and a higher doping level take place.

Sol-gel derived antireflective structures for applications in silicon solar cells

NASA Astrophysics Data System (ADS)

Karasiński, Paweł; Skolik, Marcin

2016-12-01

This work presents theoretical and experimental results of antireflective coatings (ARCs) obtained for applications in silicon solar cells. ARCs were derived from sol-gel process and dip-coated using silica (SiO2) and titania (TiO2). Theoretical results were obtained using 2×2 transfer matrix calculation method. Technological process of SiO2 and TiO2 thin film fabrication as well as measurement techniques are described in this paper. Strong correlation between theoretical and experimental data is demonstrated. It is shown, that weighted average reflection from a substrate can be reduced ten times with the use of SiO2/TiO2/Si double layer ARCs, when compared to a bare silica substrate.

Formation of Fe3O4@SiO2@C/Ni hybrids with enhanced catalytic activity and histidine-rich protein separation.

PubMed

Zhang, Yanwei; Zhang, Min; Yang, Jinbo; Ding, Lei; Zheng, Jing; Xu, Jingli; Xiong, Shenglin

2016-09-21

In this paper, we have developed an extended Stöber method to construct a Ni(2+)-polydopamine (PDA) complex thin coating on Fe3O4@SiO2 spheres, which can be carbonized to produce hybrid composites with metallic nickel nanoparticles embedded in a PDA-derived thin graphitic carbon layer (named Fe3O4@SiO2@C/Ni). Interestingly, by introducing a thin SiO2 spacer layer between PDA-Ni(2+) and Fe3O4, the reverse electron transfer from PDA to Fe3O4 is probably able to be suppressed in the calcination process, which leads to the in situ reduction of only Ni(2+) by PDA instead of Fe3O4 and Ni(2+). Consequently, the size and density of nickel nanoparticles on the surface of SiO2@Fe3O4 can be finely adjusted. Moreover, it is found that the ability of tuning nickel nanoparticles is mainly dependent on the thickness of the spacer layer. When the thickness of the SiO2 spacer is beyond the electron penetration depth, the size and density of nickel nanoparticles can be exactly tuned. The as-prepared Fe3O4@SiO2@C/Ni was employed as the catalyst to investigate the catalytic performance in the reduction of 4-nitrophenol (4-NP); furthermore, nickel nanoparticles decorated on Fe3O4@SiO2@C spheres display a strong affinity to His-tagged proteins (BHb and BSA) via a specific metal affinity force between polyhistidine groups and nickel nanoparticles.

New approach for producing chemical templates over large area by Molecular Transfer Printing

NASA Astrophysics Data System (ADS)

Inoue, Takejiro; Janes, Dustin; Ren, Jiaxing; Willson, Grant; Ellison, Christopher; Nealey, Paul

2014-03-01

Fabrication of well-defined chemically patterned surfaces is crucially important to the development of next generation microprocessors, hard disk memory devices, photonic/plasmonic devices, separation membranes, and biological microarrays. One promising patterning method in these fields is Molecular Transfer Printing (MTP), which replicates chemical patterns with feature dimensions of the order of 10nm utilizing a master template defined by the microphase separated domains of a block copolymer thin film. The total transfer printing area achievable by MTP has so far been limited by the contact area between two rigid substrates. Therefore, strategies to make conformal contact between substrates could be practically useful because a single lithographically-defined starting pattern could be used to fabricate many replicates by a low-cost process. Here we show a new approach that utilizes a chemically deposited SiN layer and a liquid conformal layer to enable transfer printing of chemical patterns upon thermal annealing over large, continuous areas. We anticipate that our process could be integrated into Step and Flash Imprint Lithography (SFIL) tools to achieve conformal layer thicknesses thin and uniform enough to permit pattern transfer through a dry-etch protocol.

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

NASA Astrophysics Data System (ADS)

Shen, Huaxiang; Zhu, Guo-Zhen; Botton, Gianluigi A.; Kitai, Adrian

2015-03-01

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality ( 0002 ) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by ( 0002 ) oriented wurtzite GaN and { 111 } oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H2 into Ar and/or N2 during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H2 into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted { 3 3 ¯ 02 } orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H2 into N2 due to the complex reaction between H2 and N2.

Integrated MoSe2 with n+p-Si photocathodes for solar water splitting with high efficiency and stability

NASA Astrophysics Data System (ADS)

Huang, Guanping; Mao, Jie; Fan, Ronglei; Yin, Zhihao; Wu, Xi; Jie, Jiansheng; Kang, Zhenhui; Shen, Mingrong

2018-01-01

Many earth-abundant transition metal dichalcogenides (TMDs) have been employed as catalysts for H2 evolution reaction (HER); however, their impactful integration onto photocathodes for photoelectrochemical (PEC) HER is less developed. In this study, we directly sputtered a MoSe2 catalyst onto an n+p-Si photocathode for efficient and stable PEC-HER. An onset potential of 0.4 V vs. RHE, a saturated photocurrent of 29.3 mA/cm2, a fill factor of 0.32, and an energy conversion efficiency of 3.8% were obtained under 100 mA/cm2 Xe lamp illumination. Such superior PEC properties were ascribed to the nearly vertically standing two dimensional MoSe2 rough surface layer and the sharp interface between Si and MoSe2 with small charge transfer resistance. The balance between the reflectivity of the electrode surface and the absorptivity of MoSe2 was also discussed. In addition, the MoSe2 layer can protect the n+p-Si photocathode with a 120 h stability due to its initial growth on Si with high flatness and compactness. This study provides a path to the effective and scalable growth of TMDs onto the Si photocathode aiming for high efficiency and stability.

Stabilizing a graphene platform toward discrete components

NASA Astrophysics Data System (ADS)

Mzali, Sana; Montanaro, Alberto; Xavier, Stéphane; Servet, Bernard; Mazellier, Jean-Paul; Bezencenet, Odile; Legagneux, Pierre; Piquemal-Banci, Maëlis; Galceran, Regina; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Cojocaru, Costel-Sorin; Centeno, Alba; Zurutuza, Amaia

2016-12-01

We report on statistical analysis and consistency of electrical performances of devices based on a large scale passivated graphene platform. More than 500 graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition and transferred on 4 in. SiO2/Si substrates were fabricated and tested. We characterized the potential of a two-step encapsulation process including an Al2O3 protection layer to avoid graphene contamination during the lithographic process followed by a final Al2O3 passivation layer subsequent to the GFET fabrication. Devices were investigated for occurrence and reproducibility of conductance minimum related to the Dirac point. While no conductance minimum was observed in unpassivated devices, 75% of the passivated transistors exhibited a clear conductance minimum and low hysteresis. The maximum of the device number distribution corresponds to a residual doping below 5 × 1011 cm-2 (0.023 V/nm). This yield shows that GFETs integrating low-doped graphene and exhibiting small hysteresis in the transfer characteristics can be envisaged for discrete components, with even further potential for low power driven electronics.

Electrochemical behavior of platinum nanoparticles on a carbon xerogel support modified with a [(trifluoromethyl)-benzenesulfonyl]imide electrolyte.

PubMed

Liu, Bing; Mei, Hua; DesMarteau, Darryl; Creager, Stephen E

2014-12-11

A monoprotic [(trifluoromethyl)benzenesulfonyl]imide (SI) superacid electrolyte was used to covalently modify a mesoporous carbon xerogel (CX) support via reaction of the corresponding trifluoromethyl aryl sulfonimide diazonium zwitterion with the carbon surface. Electrolyte attachment was demonstrated by elemental analysis, acid-base titration, and thermogravimetric analysis. The ion-exchange capacity of the fluoroalkyl-aryl-sulfonimide-grafted carbon xerogel (SI-CX) was ∼0.18 mequiv g(-1), as indicated by acid-base titration. Platinum nanoparticles were deposited onto the SI-grafted carbon xerogel samples by the impregnation and reduction method, and these materials were employed to fabricate polyelectrolyte membrane fuel-cell (PEMFC) electrodes by the decal transfer method. The SI-grafted carbon-xerogel-supported platinum (Pt/SI-CX) was characterized by X-ray diffraction and transmission electron microscopy to determine platinum nanoparticle size and distribution, and the findings are compared with CX-supported platinum catalyst without the grafted SI electrolyte (Pt/CX). Platinum nanoparticle sizes are consistently larger on Pt/SI-CX than on Pt/CX. The electrochemically active surface area (ESA) of platinum catalyst on the Pt/SI-CX and Pt/CX samples was measured with ex situ cyclic voltammetry (CV) using both hydrogen adsorption/desorption and carbon monoxide stripping methods and by in situ CV within membrane electrode assemblies (MEAs). The ESA values for Pt/SI-CX are consistently lower than those for Pt/CX. Some possible reasons for the behavior of samples with and without grafted SI layers and implications for the possible use of SI-grafted carbon layers in PEMFC devices are discussed.

Effect of etching parameters on antireflection properties of Si subwavelength grating structures for solar cell applications

NASA Astrophysics Data System (ADS)

Leem, J. W.; Song, Y. M.; Lee, Y. T.; Yu, J. S.

2010-09-01

Silicon (Si) subwavelength grating (SWG) structures were fabricated on Si substrates by holographic lithography and subsequent inductively coupled plasma (ICP) etching process using SiCl4 with or without Ar addition for solar cell applications. To ensure a good nanosized pattern transfer into the underlying Si layer, the etch selectivity of Si over the photoresist mask is optimized by varying the etching parameters, thus improving antireflection characteristics. For antireflection analysis of Si SWG surfaces, the optical reflectivity is measured experimentally and it is also calculated theoretically by a rigorous coupled-wave analysis. The reflectance depends on the height, period, and shape of two-dimensional periodic Si subwavelength structures, correlated with ICP etching parameters. The optimized Si SWG structure exhibits a dramatic decrease in optical reflection of the Si surface over a wide angle of incident light ( θ i ), i.e. less than 5% at wavelengths of 300-1100 nm, leading to good wide-angle antireflection characteristics (i.e. solar-weighted reflection of 1.7-4.9% at θ i <50°) of Si solar cells.

Local Heating of Discrete Droplets Using Magnetic Porous Silicon-Based Photonic Crystals

PubMed Central

Park, Ji-Ho; Derfus, Austin M.; Segal, Ester; Vecchio, Kenneth S.; Bhatia, Sangeeta N.; Sailor, Michael J.

2012-01-01

This paper describes a method for local heating of discrete micro-liter scale liquid droplets. The droplets are covered with magnetic porous Si microparticles, and heating is achieved by application of an external alternating electromagnetic field. The magnetic porous Si microparticles consist of two layers: the top layer contains a photonic code and it is hydrophobic, with surface-grafted dodecyl moieties. The bottom layer consists of a hydrophilic Si oxide host layer that is infused with Fe3O4 nanoparticles. The amphiphilic microparticles spontaneously align at the interface of a water droplet immersed in mineral oil, allowing manipulation of the droplets by application of a magnetic field. Application of an oscillating magnetic field (338 kHz, 18A RMS current in a coil surrounding the experiment) generates heat in the superparamagnetic particles that can raise the temperature of the enclosed water droplet to >80 °C within 5 min. A simple microfluidics application is demonstrated: combining complementary DNA strands contained in separate droplets and then thermally inducing dehybridization of the conjugate. The complementary oligonucleotides were conjugated with the cyanine dye fluorophores Cy3 and Cy5 to quantify the melting/re-binding reaction by fluorescence resonance energy transfer (FRET). The magnetic porous Si microparticles were prepared as photonic crystals, containing spectral codes that allowed the identification of the droplets by reflectivity spectroscopy. The technique demonstrates the feasibility of tagging, manipulating, and heating small volumes of liquids without the use of conventional microfluidic channel and heating systems. PMID:16771508

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Fabrication of Buried Nanochannels From Nanowire Patterns

NASA Technical Reports Server (NTRS)

Choi, Daniel; Yang, Eui-Hyeok

2007-01-01

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

Annealing pressure induced ions transfer in Cobalt-Ferrite thin films on amorphous SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Huang, Shun-Yu; Chong, Cheong-Wei; Chen, Pin-Hui; Li, Hong-Lin; Li, Min-Kai; Huang, J. C. Andrew

2017-11-01

In this work, Cobalt-Ferrite (CFO) films were grown on silicon substrates with 300 nm amorphous silicon dioxide by Pulsed Laser Deposition (PLD) with different annealing conditions. The results of structural analysis prove that the CFO films have high crystalline quality with (1 1 1) preferred orientation. The Raman spectra and X-ray absorption spectra (XAS) indicate that the Co ions can transfer from tetrahedral sites to octahedral sites with increasing the annealing pressure. The site exchange of Co and Fe ions leads to the change of saturation magnetization in the CFO films. Our experiments provide not only a way to control the magnetism of CFO films, but also a suitable magnetic layer to develop silicon and semiconductor based spintronic devices.

Layer Dependence and Light Tuning Surface Potential of 2D MoS2 on Various Substrates.

PubMed

Li, Feng; Qi, Junjie; Xu, Minxuan; Xiao, Jiankun; Xu, Yuliang; Zhang, Xiankun; Liu, Shuo; Zhang, Yue

2017-04-01

Here surface potential of chemical vapor deposition (CVD) grown 2D MoS 2 with various layers is reported, and the effect of adherent substrate and light illumination on surface potential of monolayer MoS 2 are investigated. The surface potential of MoS 2 on Si/SiO 2 substrate decreases from 4.93 to 4.84 eV with the increase in the number of layer from 1 to 4 or more. Especially, the surface potentials of monolayer MoS 2 are strongly dependent on its adherent substrate, which are determined to be 4.55, 4.88, 4.93, 5.10, and 5.50 eV on Ag, graphene, Si/SiO 2 , Au, and Pt substrates, respectively. Light irradiation is introduced to tuning the surface potential of monolayer MoS 2 , with the increase in light intensity, the surface potential of MoS 2 on Si/SiO 2 substrate decreases from 4.93 to 4.74 eV, while increases from 5.50 to 5.56 eV on Pt substrate. The I-V curves on vertical of monolayer MoS 2 /Pt heterojunction show the decrease in current with the increase of light intensity, and Schottky barrier height at MoS 2 /Pt junctions increases from 0.302 to 0.342 eV. The changed surface potential can be explained by trapped charges on surface, photoinduced carriers, charge transfer, and local electric field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Significantly Elevated Dielectric and Energy Storage Traits in Boron Nitride Filled Polymer Nano-composites with Topological Structure

NASA Astrophysics Data System (ADS)

Feng, Yefeng; Zhang, Jianxiong; Hu, Jianbing; Li, Shichun; Peng, Cheng

2018-03-01

Interface induced polarization has a prominent influence on dielectric properties of 0-3 type polymer based composites containing Si-based semi-conductors. The disadvantages of composites were higher dielectric loss, lower breakdown strength and energy storage density, although higher permittivity was achieved. In this work, dielectric, conductive, breakdown and energy storage properties of four nano-composites have been researched. Based on the cooperation of fluoropolymer/alpha-SiC layer and fluoropolymer/hexagonal-BN layer, it was confirmed constructing the heterogeneous layer-by-layer composite structure rather than homogeneous mono-layer structure could significantly reduce dielectric loss, promote breakdown strength and increase energy storage density. The former worked for a larger dielectric response and the latter layer acted as a robust barrier of charge carrier transfer. The best nano-composite could possess a permittivity of 43@100 Hz ( 3.3 times of polymer), loss of 0.07@100 Hz ( 37% of polymer), discharged energy density of 2.23 J/cm3@249 kV/cm ( 10 times of polymer) and discharged energy efficiency of 54%@249 kV/cm ( 5 times of polymer). This work might enlighten a facile route to achieve the promising high energy storage composite dielectrics by constructing the layer-by-layer topological structure.

Improving Light Harvesting in Dye-Sensitized Solar Cells Using Hybrid Bimetallic Nanostructures

DOE PAGES

Zarick, Holly F.; Erwin, William R.; Boulesbaa, Abdelaziz; ...

2016-01-25

In this paper, we demonstrate improved light trapping in dye-sensitized solar cells (DSSCs) with hybrid bimetallic gold core/silver shell nanostructures. Silica-coated bimetallic nanostructures (Au/Ag/SiO 2 NSs) integrated in the active layer of DSSCs resulted in 7.51% power conversion efficiency relative to 5.97% for reference DSSCs, giving rise to 26% enhancement in device performance. DSSC efficiencies were governed by the particle density of Au/Ag/SiO 2 NSs with best performing devices utilizing only 0.44 wt % of nanostructures. We performed transient absorption spectroscopy of DSSCs with variable concentrations of Au/Ag/SiO 2 NSs and observed an increase in amplitude and decrease in lifetimemore » with increasing particle density relative to reference. Finally, we attributed this trend to plasmon resonant energy transfer and population of the singlet excited states of the sensitizer molecules at the optimum concentration of NSs promoting enhanced exciton generation and rapid charge transfer into TiO 2.« less

Low temperature InP /Si wafer bonding using boride treated surface

NASA Astrophysics Data System (ADS)

Huang, Hui; Ren, Xiaomin; Wang, Wenjuan; Song, Hailan; Wang, Qi; Cai, Shiwei; Huang, Yongqing

2007-04-01

An approach for InP /Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As/InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3-POx-SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.

Graphene wrapping as a protective clamping layer anchored to carbon nanofibers encapsulating Si nanoparticles for a Li-ion battery anode

NASA Astrophysics Data System (ADS)

Shin, Jungwoo; Park, Kyusung; Ryu, Won-Hee; Jung, Ji-Won; Kim, Il-Doo

2014-10-01

Carbon nanofibers encapsulating Si nanoparticles (CNFs/SiNPs) were prepared via an electrospinning method and chemically functionalized with 3-aminopropyltriethoxysilane (APS) to be grafted onto graphene oxide (GO). As a result, the thin and flexible GO, which exhibits a negative charge in aqueous solution, fully wrapped around the APS-functionalized CNFs with a positive surface charge via electrostatic self-assembly. After the formation of chemical bonds between the epoxy groups on GO and the amine groups in APS via an epoxy ring opening reaction, the GO was chemically reduced to a reduced graphene oxide (rGO). Electrochemical and morphological characterizations showed that capacity loss by structural degradation and electrolyte decomposition on Si surface were significantly suppressed in the rGO-wrapped CNFs/SiNPs (CNFs/SiNPs@rGO). Superior capacities were consequently maintained for up to 200 cycles at a high current density (1048 mA h g-1 at 890 mA g-1) compared to CNFs/SiNPs without the rGO wrapping (304 mA h g-1 at 890 mA g-1). Moreover, the resistance of the SEI layer and charge transfer resistance were also considerably reduced by 24% and 88%, respectively. The described graphene wrapping offers a versatile way to enhance the mechanical integrity and electrochemical stability of Si composite anode materials.Carbon nanofibers encapsulating Si nanoparticles (CNFs/SiNPs) were prepared via an electrospinning method and chemically functionalized with 3-aminopropyltriethoxysilane (APS) to be grafted onto graphene oxide (GO). As a result, the thin and flexible GO, which exhibits a negative charge in aqueous solution, fully wrapped around the APS-functionalized CNFs with a positive surface charge via electrostatic self-assembly. After the formation of chemical bonds between the epoxy groups on GO and the amine groups in APS via an epoxy ring opening reaction, the GO was chemically reduced to a reduced graphene oxide (rGO). Electrochemical and morphological characterizations showed that capacity loss by structural degradation and electrolyte decomposition on Si surface were significantly suppressed in the rGO-wrapped CNFs/SiNPs (CNFs/SiNPs@rGO). Superior capacities were consequently maintained for up to 200 cycles at a high current density (1048 mA h g-1 at 890 mA g-1) compared to CNFs/SiNPs without the rGO wrapping (304 mA h g-1 at 890 mA g-1). Moreover, the resistance of the SEI layer and charge transfer resistance were also considerably reduced by 24% and 88%, respectively. The described graphene wrapping offers a versatile way to enhance the mechanical integrity and electrochemical stability of Si composite anode materials. Electronic supplementary information (ESI) available: SEM images and XRD pattern of CNFs/SiNPs; photographs of CNFs/SiNPs@rGO solutions; SEM images of CNFs/SiNPs@rGO at different graphene concentrations; SEM images of CNFs@SiNPs@rGO without APS functionalization; Electrochemical cell performance of CNFs@SiNPs@rGO with different wrapping concentrations; and electrochemical impendence spectroscopy data for CNFs@SiNPs and CNFs@SiNPs@rGO after the first discharge. See DOI: 10.1039/c4nr03173c

A brief description of the simple biosphere model (SiB)

NASA Technical Reports Server (NTRS)

Sellers, P. J.; Mintz, Y.; Sud, Y. C.

1986-01-01

A biosphere model for calculating the transfer of energy, mass, and momentum between the atmosphere and the vegetated surface of the Earth was designed for atmospheric general circulation models. An upper vegetation layer represents the perennial canopy of trees or shrubs, a lower layer represents the annual ground cover of grasses and other herbacious species. The local coverage of each vegetation layer may be fractional or complete but as the individual vegetation elements are considered to be evenly spaced, their root systems are assumed to extend uniformly throughout the entire grid-area. The biosphere has seven prognostic physical-state variables: two temperatures (one for the canopy and one for the ground cover and soil surface); two interception water stores (one for the canopy and one for the ground cover); and three soil moisture stores (two of which can be reached by the vegetation root systems and one underlying recharge layer into and out of which moisture is transferred only by hydraulic diffusion).

Growth of periodic nano-layers of nano-crystals of Au, Ag, Cu by ion beam

NASA Technical Reports Server (NTRS)

Smith, Cydale C.; Zheng, B.; Muntele, C. I.; Muntele, I. C.; Ila, D.

2005-01-01

Multilayered thin films of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/, were grown by deposition. We have previously shown that MeV ion Bombardment of multi-nano-layers of SiO2/AU+ SiO2/ produces Au nanocrystals in the AU+ SiO2 layers. An increased number of nano-layers followed by MeV ion bombardment produces a wide optical absorption band, of which its FWHM depends on the number of nano-layers of SiO2/AU+ SiO2/. We have successfully repeated this process for nano-layers of SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/. In this work we used 5 MeV Si as the post deposition bombardment ion and monitored the location as well as the optical absorption's FWHM for each layered structure using Optical Absorption Photospectrometry. The concentration and location of the metal nano-crystals were measured by Rutherford Backscattering Spectrometry. We will report on the results obtained for nano-layered structures produced by post deposition bombardment of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/ layered systems as well as the results obtained from a system containing a periodic combination of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/.

Wavelength dependent vertical integration of nanoplasmonic circuits utilizing coupled ring resonators

NASA Astrophysics Data System (ADS)

Nielsen, M.; Elezzabi, A. Y.

2013-03-01

To become a competitor to replace CMOS-electronics for next-generation data processing, signal routing, and computing, nanoplasmonic circuits will require an analogue to electrical vias in order to enable vertical connections between device layers. Vertically stacked nanoplasmonic nanoring resonators formed of Ag/Si/Ag gap plasmon waveguides were studied as a novel 3-D coupling scheme that could be monolithically integrated on a silicon platform. The vertically coupled ring resonators were evanescently coupled to 100 nm x 100 nm Ag/Si/Ag input and output waveguides and the whole device was submerged in silicon dioxide. 3-D finite difference time domain simulations were used to examine the transmission spectra of the coupling device with varying device sizes and orientations. By having the signal coupling occur over multiple trips around the resonator, coupling efficiencies as high as 39% at telecommunication wavelengths between adjacent layers were present with planar device areas of only 1.00 μm2. As the vertical signal transfer was based on coupled ring resonators, the signal transfer was inherently wavelength dependent. Changing the device size by varying the radii of the nanorings allowed for tailoring the coupled frequency spectra. The plasmonic resonator based coupling scheme was found to have quality (Q) factors of upwards of 30 at telecommunication wavelengths. By allowing different device layers to operate on different wavelengths, this coupling scheme could to lead to parallel processing in stacked independent device layers.

Localization of vibrational modes leads to reduced thermal conductivity of amorphous heterostructures

NASA Astrophysics Data System (ADS)

Giri, Ashutosh; Donovan, Brian F.; Hopkins, Patrick E.

2018-05-01

We investigate the vibrational heat transfer mechanisms in amorphous Stillinger-Weber silicon and germanium-based alloys and heterostructures via equilibrium and nonequilibrium molecular dynamics simulations along with lattice dynamics calculations. We find that similar to crystalline alloys, amorphous alloys demonstrate large size effects in thermal conductivity, while layering the constituent materials into superlattice structures leads to length-independent thermal conductivities. The thermal conductivity of an amorphous SixGe1 -x alloy reduces by as much as ˜53 % compared to the thermal conductivity of amorphous silicon; compared to the larger reduction in crystalline phases due to alloying, we show that compositional disorder rather than structural disorder has a larger impact on the thermal conductivity reduction. Our thermal conductivity predictions for a-Si/a-Ge superlattices suggest that the alloy limit in amorphous SiGe-based structures can be surpassed with interface densities above ˜0.35 nm-1 . We attribute the larger reduction in thermal conductivity of layered Si/Ge heterostructures to greater localization of modes at and around the cutoff frequency of the softer layer as demonstrated via lattice dynamics calculations and diffusivities of individual eigenmodes calculated according to the Allen-Feldman theory [P. B. Allen and J. L. Feldman, Phys. Rev. B 48, 12581 (1993), 10.1103/PhysRevB.48.12581] for our amorphous SiGe-based alloys and superlattice structures.

Development of graphene process control by industrial optical spectroscopy setup

NASA Astrophysics Data System (ADS)

Fursenko, O.; Lukosius, M.; Lupina, G.; Bauer, J.; Villringer, C.; Mai, A.

2017-06-01

The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene grown by CVD on large diameter production wafers [1-3] which are in the interest of the semiconductor industry. Here, a high-throughput optical metrology method for measuring the thickness and uniformity of large-area graphene sheets is demonstrated. The method is based on the combination of spectroscopic ellipsometry and normal incidence reflectometry in UV-Vis wavelength range (200-800 nm) with small light spots ( 30 μm2) realized in wafer optical metrology tool. In the first step graphene layers were transferred on a SiO2/Si substrate in order to determine the optical constants of graphene by the combination of multi-angle ellipsometry and reflectometry. Then these data were used for the development of a process control recipe of CVD graphene on 200 mm Ge(100)/Si(100) wafers. The graphene layer quality was additionally monitored by Raman spectroscopy. Atomic force microscopy measurements were performed for micro topography evaluation. In consequence, a robust recipe for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, surface residuals or interface layer underneath graphene and surface roughness is developed. Optical monitoring of graphene thickness uniformity over a wafer has shown an excellent long term stability (s=0.004 nm) regardless of the growth of interfacial GeO2 and surface roughness. The sensitivity of the optical identification of graphene during microelectronic processing was evaluated. This optical metrology technique with combined data collection exhibit a fast and highly precise method allowing one an unambiguous detection of graphene after transferring as well as after the CVD deposition process on a Ge(100)/Si(100) wafer. This approach is well suited for industrial applications due to its repeatability and flexibility.

Direct-Write Laser Grayscale Lithography for Multilayer Lead Zirconate Titanate Thin Films.

PubMed

Benoit, Robert R; Jordan, Delaney M; Smith, Gabriel L; Polcawich, Ronald G; Bedair, Sarah S; Potrepka, Daniel M

2018-05-01

Direct-write laser grayscale lithography has been used to facilitate a single-step patterning technique for multilayer lead zirconate titanate (PZT) thin films. A 2.55- -thick photoresist was patterned with a direct-write laser. The intensity of the laser was varied to create both tiered and sloped structures that are subsequently transferred into multilayer PZT(52/48) stacks using a single Ar ion-mill etch. Traditional processing requires a separate photolithography step and an ion mill etch for each layer of the substrate, which can be costly and time consuming. The novel process allows access to buried electrode layers in the multilayer stack in a single photolithography step. The grayscale process was demonstrated on three 150-mm diameter Si substrates configured with a 0.5- -thick SiO 2 elastic layer, a base electrode of Pt/TiO 2 , and a stack of four PZT(52/48) thin films of either 0.25- thickness per layer or 0.50- thickness per layer, and using either Pt or IrO 2 electrodes above and below each layer. Stacked capacitor structures were patterned and results will be reported on the ferroelectric and electromechanical properties using various wiring configurations and compared to comparable single layer PZT configurations.

Surface modification of poly(vinylidene fluoride) hollow fibre membranes for biogas purification in a gas-liquid membrane contactor system.

PubMed

Jin, Pengrui; Huang, Chuan; Li, Jiaxiang; Shen, Yadong; Wang, Liao

2017-11-01

The wetting of hollow fibre membranes decreases the performance of the liquid-gas membrane contactor for CO 2 capture in biogas upgrading. To solve this problem, in this work, a poly(vinylidene fluoride) (PVDF) hollow fibre membrane for a liquid-gas membrane contactor was coated with a superhydrophobic layer composed of a combination of hydrophobic SiO 2 nanoparticles and polydimethylsiloxane (PDMS) by the method of spray deposition. A rough layer of SiO 2 deposited on the PVDF membrane resulted in an enhanced surface hydrophobicity. The surface structure of the pristine PVDF significantly affected the homogeneity of the generated SiO 2 layer. A uniform surface coating on the PVDF upper layer resulted from the presence of micrometre and nanometre-sized roughness on the surface of the PVDF membrane, which was achieved with a SiO 2 concentration of 4.44 mg ml -1 (0.2 g/45 ml) in the coating solution. As a result, the water contact angle of the modified surface was recorded as 155 ± 3°, which is higher than that of the pristine surface. The high contact angle is advantageous for reducing the wetting of the membrane. Additional mass transfer resistance was introduced by the superhydrophobic layer. In addition, continuous CO 2 absorption tests were carried out in original and modified PVDF hollow fibre membrane contactors, using monoethanolamine (MEA) solution as the absorbent. A long-term stability test revealed that the modified PVDF hollow fibre membrane contactor was able to outperform the original membrane contactor and demonstrated outstanding long-term stability, suggesting that spray deposition is a promising approach to obtain superhydrophobic PVDF membranes for liquid-gas membrane absorption.

Surface modification of poly(vinylidene fluoride) hollow fibre membranes for biogas purification in a gas–liquid membrane contactor system

PubMed Central

Huang, Chuan; Li, Jiaxiang; Shen, Yadong; Wang, Liao

2017-01-01

The wetting of hollow fibre membranes decreases the performance of the liquid–gas membrane contactor for CO2 capture in biogas upgrading. To solve this problem, in this work, a poly(vinylidene fluoride) (PVDF) hollow fibre membrane for a liquid–gas membrane contactor was coated with a superhydrophobic layer composed of a combination of hydrophobic SiO2 nanoparticles and polydimethylsiloxane (PDMS) by the method of spray deposition. A rough layer of SiO2 deposited on the PVDF membrane resulted in an enhanced surface hydrophobicity. The surface structure of the pristine PVDF significantly affected the homogeneity of the generated SiO2 layer. A uniform surface coating on the PVDF upper layer resulted from the presence of micrometre and nanometre-sized roughness on the surface of the PVDF membrane, which was achieved with a SiO2 concentration of 4.44 mg ml−1 (0.2 g/45 ml) in the coating solution. As a result, the water contact angle of the modified surface was recorded as 155 ± 3°, which is higher than that of the pristine surface. The high contact angle is advantageous for reducing the wetting of the membrane. Additional mass transfer resistance was introduced by the superhydrophobic layer. In addition, continuous CO2 absorption tests were carried out in original and modified PVDF hollow fibre membrane contactors, using monoethanolamine (MEA) solution as the absorbent. A long-term stability test revealed that the modified PVDF hollow fibre membrane contactor was able to outperform the original membrane contactor and demonstrated outstanding long-term stability, suggesting that spray deposition is a promising approach to obtain superhydrophobic PVDF membranes for liquid–gas membrane absorption. PMID:29291117

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NASA Astrophysics Data System (ADS)

Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-09-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.

PubMed

Qiu, Dongri; Kim, Eun Kyu

2015-09-03

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

NASA Astrophysics Data System (ADS)

Qiu, Dongri; Kim, Eun Kyu

2015-09-01

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

Laser-fired contact formation on metallized and passivated silicon wafers under short pulse durations

NASA Astrophysics Data System (ADS)

Raghavan, Ashwin S.

The objective of this work is to develop a comprehensive understanding of the physical processes governing laser-fired contact (LFC) formation under microsecond pulse durations. Primary emphasis is placed on understanding how processing parameters influence contact morphology, passivation layer quality, alloying of Al and Si, and contact resistance. In addition, the research seeks to develop a quantitative method to accurately predict the contact geometry, thermal cycles, heat and mass transfer phenomena, and the influence of contact pitch distance on substrate temperatures in order to improve the physical understanding of the underlying processes. Finally, the work seeks to predict how geometry for LFCs produced with microsecond pulses will influence fabrication and performance factors, such as the rear side contacting scheme, rear surface series resistance and effective rear surface recombination rates. The characterization of LFC cross-sections reveals that the use of microsecond pulse durations results in the formation of three-dimensional hemispherical or half-ellipsoidal contact geometries. The LFC is heavily alloyed with Al and Si and is composed of a two-phase Al-Si microstructure that grows from the Si wafer during resolidification. As a result of forming a large three-dimensional contact geometry, the total contact resistance is governed by the interfacial contact area between the LFC and the wafer rather than the planar contact area at the original Al-Si interface within an opening in the passivation layer. By forming three-dimensional LFCs, the total contact resistance is significantly reduced in comparison to that predicted for planar contacts. In addition, despite the high energy densities associated with microsecond pulse durations, the passivation layer is well preserved outside of the immediate contact region. Therefore, the use of microsecond pulse durations can be used to improve device performance by leading to lower total contact resistances while preserving the passivation layer. A mathematical model was developed to accurately predict LFC geometry over a wide range of processing parameters by accounting for transient changes in Al and Si alloy composition within the LFC. Since LFC geometry plays a critical role in device performance, an accurate method to predict contact geometry is an important tool that can facilitate further process development. Dimensionless analysis was also conducted to evaluate the relative importance of heat and mass transfer mechanisms. It is shown that convection plays a dominant role in the heat and mass transfer within the molten pool. Due to convective mass transfer, the contacts are heavily doped with Al and Si within 10 is after contact formation, which contributes to the entire resolidified region behaving as the electrically active LFC. The validated model is also used to determine safe operating regimes during laser processing to avoid excessively high operating temperatures. By maintaining processing temperatures below a critical temperature threshold, the onset of liquid metal expulsion and loss of alloying elements can be avoided. The process maps provide a framework that can be used to tailor LFC geometry for device fabrication. Finally, using various geometric relationships for the rear side contacting scheme for photovoltaic devices, it is shown that by employing hemispherical contacts, the number of LFCs required on the rear side can be reduced 75% while doubling the pitch distance and increasing the passivation fraction. Reducing the number of backside contacts required can have a noteworthy impact of manufacturing throughput. In addition, the analytical models suggest that device performance can be maintained at levels comparable to those achieved for planar contacts when producing three-dimensional contacts. The materials and electrical characterization results, device simulations, and design considerations presented in this thesis indicate that by forming three-dimensional LFCs, performance levels of Si-based photovoltaic devices can be maintained while greatly enhancing manufacturing efficiency. The research lays a solid foundation for future development of the LFC process with microsecond pulse durations and indicates that device fabrication employing this method is a critical step moving forward.

Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Conti, G.; Nemšák, S.; Kuo, C.-T.; Gehlmann, M.; Conlon, C.; Keqi, A.; Rattanachata, A.; Karslıoǧlu, O.; Mueller, J.; Sethian, J.; Bluhm, H.; Rault, J. E.; Rueff, J. P.; Fang, H.; Javey, A.; Fadley, C. S.

2018-05-01

Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO4 and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO2/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

Millimeter-Wave Wireless Power Transfer Technology for Space Applications

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Manohara, Harish; Mojarradi, Mohammad M.; Vo, Tuan A.; Mojarradi, Hadi; Bae, Sam Y.; Marzwell, Neville

2008-01-01

In this paper we present a new compact, scalable, and low cost technology for efficient receiving of power using RF waves at 94 GHz. This technology employs a highly innovative array of slot antennas that is integrated on substrate composed of gold (Au), silicon (Si), and silicon dioxide (SiO2) layers. The length of the slots and spacing between them are optimized for a highly efficient beam through a 3-D electromagnetic simulation process. Antenna simulation results shows a good beam profile with very low side lobe levels and better than 93% antenna efficiency.

Interaction of cesium adatoms with free-standing graphene and graphene-veiled SiO 2 surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weck, Philippe F.; Kim, Eunja; Biedermann, Grant W.

2015-04-21

In this study, the interaction of Cs adatoms with mono- or bi-layered graphene (MLG and BLG), either free-standing or on a SiO 2 substrate, was investigated using density functional theory. The most stable adsorption sites for Cs are found to be hollow sites on both graphene sheets and graphene-veiled SiO 2(0001). In addition, larger dipole moments are created when a MLG-veiled SiO 2(0001) substrate is used for adsorption of Cs atoms compared to the adsorption on free-standing MLG, due to charge transfer occurring between the MLG and the SiO 2 substrate. For the adsorption of Cs on BLG-veiled SiO 2(0001)more » substrate, these differences are smoothed out and the binding energies corresponding to different sites are nearly degenerate; smaller dipole moments created by the Cs adatoms on BLG compared to MLG are also predicted.« less

Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma

NASA Astrophysics Data System (ADS)

Xu, Zhihao; Gotoh, Kazuhiro; Deng, Tianguo; Sato, Takuma; Takabe, Ryota; Toko, Kaoru; Usami, Noritaka; Suemasu, Takashi

2018-05-01

We studied the surface passivation effect of hydrogenated amorphous silicon (a-Si:H) layers on BaSi2 films. a-Si:H was formed by an electron-beam evaporation of Si, and a supply of atomic hydrogen using radio-frequency plasma. Surface passivation effect was first investigated on a conventional n-Si(111) substrate by capping with 20 nm-thick a-Si:H layers, and next on a 0.5 μm-thick BaSi2 film on Si(111) by molecular beam epitaxy. The internal quantum efficiency distinctly increased by 4 times in a wide wavelength range for sample capped in situ with a 3 nm-thick a-Si:H layer compared to those capped with a pure a-Si layer.

Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics

NASA Astrophysics Data System (ADS)

Foo, Y. L.; Bratland, K. A.; Cho, B.; Desjardins, P.; Greene, J. E.

2003-04-01

In situ surface probes and postdeposition analyses were used to follow surface reaction paths and growth kinetics of Si1-yCy alloys grown on Si(001) by gas-source molecular-beam epitaxy from Si2H6/CH3SiH3 mixtures as a function of C concentration y (0-2.6 at %) and temperature Ts (500-600 °C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In situ isotopically tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregation during steady-state Si1-yCy(001) growth results in charge transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θSi*(y,Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. θSi* increases with increasing y and Ts in the kinetically limited segregation regime while Ed decreases from 2.52 eV for H2 desorption from Si surface sites with Si back bonds to 2.22 eV from Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts,JSi2H6,JCH3SiH3) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in excellent agreement with the experimental data.

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

Scanning tunneling microscopy study of low temperature silicon epitaxy on hydrogen/silicon(001) and phosphine adsorption on silicon(111)-7x7

NASA Astrophysics Data System (ADS)

Ji, Jeong-Young

A three-chamber ultra-high-vacuum (UHV) system with preparation, scanning tunneling microscopy (STM), and chemical vapor deposition (CVD) chambers was designed and built. Here, one can perform surface preparation, STM e-beam lithography, precursor gas dosing, ion sputtering, silicon epitaxy, and various measurements such as reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Processes performed in the ultra-clean preparation and gas-filled CVD chambers can be monitored by transferring the samples back to the STM chamber to take topographical images. Si deposition on H-terminated Si(001)-2x1 surfaces at temperatures 300--530 K was studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. Post-growth annealing transfers the top layer atoms downward to fill in vacancies in the lower layer, restoring the crystallinity of the thin film. Hydrogen is shown to remain on the growth front up to at least 10 ML. Si deposition onto the H/Si(001)-3x1 surface at 530 K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness. PH3 adsorption on Si(111)-7x7 was studied for various exposures between 0.3--60 L at room temperature by means of the scanning-tunneling-microscopy (STM). PH3-, PH2-, H-reacted, and unreacted adatoms can be identified by analyzing STM images at different sample biases. Most of PH3 adsorbs dissociatively on the surface at initial exposure, generating H and PH2 adsorption sites, followed by molecular adsorption of PH3. Rest atoms are more reactive than the adatoms and PH 2-reacted rest atom sites are also observed in STM images. Statistical analysis shows that center adatoms are more reactive than corner adatoms and the saturation P coverage is ˜0.22 ML. Finally, 900 K annealing of a PH 3 dosed surface results in a disordered, partially P-covered surface and PH3 dosing at 900 K forms the same surface reconstruction as a P2-adsorbed surface at similar temperature.

Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer

NASA Astrophysics Data System (ADS)

Lee, Soonil; Ahn, Jaehyun; Mathew, Leo; Rao, Rajesh; Zhang, Zhongjian; Kim, Jae Hyun; Banerjee, Sanjay K.; Yu, Edward T.

2018-04-01

Surface passivation using intrinsic a-Si:H (i a-Si:H) films plays a key role in high efficiency c-Si heterojunction solar cells. In this study, we demonstrate improved passivation quality using i a-Si:H films with a gradient-layered structure consisting of interfacial, transition, and capping layers deposited on c-Si surfaces. The H2 dilution ratio (R) during deposition was optimized individually for the interfacial and capping layers, which were separated by a transition layer for which R changed gradually between its values for the interfacial and capping layers. This approach yielded a significant reduction in surface carrier recombination, resulting in improvement of the minority carrier lifetime from 1480 μs for mono-layered i a-Si:H passivation to 2550 μs for the gradient-layered passivation approach.

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

PubMed

Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

2016-07-27

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

Crystallization of silicon-germanium by aluminum-induced layer exchange

NASA Astrophysics Data System (ADS)

Isomura, Masao; Yajima, Masahiro; Nakamura, Isao

2018-02-01

We have studied the crystallization of amorphous silicon-germanium (a-SiGe) by aluminum (Al)-induced layer exchange (ALILE) with a starting structure of glass/Al/Al oxide/a-SiGe. We examined ALILE at 450 °C, which is slightly higher than the eutectic temperature of Ge and Al, in order to shorten the ALILE time. We successfully produced c-SiGe films oriented in the (111) direction for 16 h without significant alloying. The thickness of Al layers should be 2800 Å or more to complete the ALILE for the a-SiGe layers of 2000-2800 Å thickness. When the Al layer is as thick as the a-SiGe layer, almost uniform c-SiGe is formed on the glass substrate. On the other hand, the islands of c-SiGe are formed on the glass substrate when the Al layer is thicker than the a-SiGe layer. The islands become smaller with thicker Al layers because more excess Al remains between the SiGe islands. The results indicate that the configuration of c-SiGe can be altered from a uniform structure to island structures of various sizes by changing the ratio of a-SiGe thickness to Al thickness.

Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

NASA Astrophysics Data System (ADS)

Hong, Ie-Hong; Hsu, Hsin-Zan

2018-03-01

The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

PubMed

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

NASA Astrophysics Data System (ADS)

Zolotukhin, D.; Seredin, P.; Lenshin, A.; Goloshchapov, D.; Mizerov, A.

2017-11-01

We report on successful growth of GaN nanorods by low-temperature plasma-assisted molecular beam epitaxy on a Si(111) substrate with and without preformed thin porous Si layer (por-Si). The deposited GaN initially forms islands which act as a seed for the wires. Porous structure of the por-Si layer helps to control nucleation islands sizes and achieve homogeneous distribution of the nanorods diameters. In addition 850 nm-thick crack-free GaN layer was formed on Si(111) substrate with preformed por-Si layer.

Multiscale Engineered Si/SiO x Nanocomposite Electrodes for Lithium-Ion Batteries Using Layer-by-Layer Spray Deposition.

PubMed

Huang, Chun; Kim, Ayoung; Chung, Dong Jae; Park, Eunjun; Young, Neil P; Jurkschat, Kerstin; Kim, Hansu; Grant, Patrick S

2018-05-09

Si-based high-capacity materials have gained much attention as an alternative to graphite in Li-ion battery anodes. Although Si additions to graphite anodes are now commercialized, the fraction of Si that can be usefully exploited is restricted due to its poor cyclability arising from the large volume changes during charge/discharge. Si/SiO x nanocomposites have also shown promising behavior, such as better capacity retention than Si alone because the amorphous SiO x helps to accommodate the volume changes of the Si. Here, we demonstrate a new electrode architecture for further advancing the performance of Si/SiO x nanocomposite anodes using a scalable layer-by-layer atomization spray deposition technique. We show that particulate C interlayers between the current collector and the Si/SiO x layer and between the separator and the Si/SiO x layer improved electrical contact and reduced irreversible pulverization of the Si/SiO x significantly. Overall, the multiscale approach based on microstructuring at the electrode level combined with nanoengineering at the material level improved the capacity, rate capability, and cycling stability compared to that of an anode comprising a random mixture of the same materials.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Chemical dealloying synthesis of porous silicon anchored by in situ generated graphene sheets as anode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Feng, Jinkui; Zhang, Zhen; Ci, Lijie; Zhai, Wei; Ai, Qing; Xiong, Shenglin

2015-08-01

A novel one-pot chemical dealloying method has been developed to prepare nanocomposite of reduced graphene oxide (RGO) and silicon dendrite from cheap commercial Al-Si eutectic precursor. The RGO anchoring could act as both conductive agent and buffer layer for Si volume change in the application of lithium ion batteries (LIBs). The Si/RGO composites show an initial reversible capacity of 2280 mAh g-1, excellent capacity retention of 1942 mAh g-1 even after 100 cycles, and a high capacity of 1521 mAh g-1 even at the rate of 4000 mA g-1. Electrochemical impedance spectroscopy (EIS) measurement proved that Si/RGO composite has the lower charge transfer resistance. This work proposes an economic and facile method to prepare silicon based anode material for next generation LIBs with high energy density.

Selective layer disordering in intersubband Al 0.028Ga 0.972 N/AlN superlattices with silicon nitride capping layer

DOE PAGES

Wierer, Jonathan J.; Allerman, Andrew A.; Skogen, Erik J.; ...

2015-06-01

We demonstrate the selective layer disordering in intersubband Al 0.028Ga 0.972 N/AlN superlattices using a silicon nitride (SiN x) capping layer. The (SiN x) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiN x thickness. The layer disordering is caused by Si diffusion, and the SiN x layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiN x layer results in selective layer disordering, an attractive method to integrate active and passivemore » III–nitride-based intersubband devices.« less

A DFT investigation on group 8B transition metal-doped silicon carbide nanotubes for hydrogen storage application

NASA Astrophysics Data System (ADS)

Tabtimsai, Chanukorn; Ruangpornvisuti, Vithaya; Tontapha, Sarawut; Wanno, Banchob

2018-05-01

The binding of group 8B transition metal (TMs) on silicon carbide nanotubes (SiCNT) hydrogenated edges and the adsorption of hydrogen molecule on the pristine and TM-doped SiCNTs were investigated using the density functional theory method. The B3LYP/LanL2DZ method was employed in all calculations for the considered structural, adsorption, and electronic properties. The Os atom doping on the SiCNT is found to be the strongest binding. The hydrogen molecule displays a weak interaction with pristine SiCNT, whereas it has a strong interaction with TM-doped SiCNTs in which the Os-doped SiCNT shows the strongest interaction with the hydrogen molecule. The improvement in the adsorption abilities of hydrogen molecule onto TM-doped SiCNTs is due to the protruding structure and the induced charge transfer between TM-doped SiCNT and hydrogen molecule. These observations point out that TM-doped SiCNTs are highly sensitive toward hydrogen molecule. Moreover, the adsorptions of 2-5 hydrogen molecules on TM-doped SiCNT were also investigated. The maximum storage number of hydrogen molecules adsorbed on the first layer of TM-doped SiCNTs is 3 hydrogen molecules. Therefore, TM-doped SiCNTs are suitable to be sensing and storage materials for hydrogen gas.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

NASA Astrophysics Data System (ADS)

Park, Young-Bae; Ruglovsky, Jennifer L.; Atwater, Harry A.

2004-07-01

Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H + and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90° a -c domain structure with a tetragonal angle of 0.5°-0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d33, is estimated from PFM to be 80-100pm/V and the coercive electric field (Ec) is 12-20kV/cm, comparable to those in single crystal BaTiO3.

Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer

NASA Astrophysics Data System (ADS)

Vasin, Andriy V.; Ishikawa, Yukari; Shibata, Noriyoshi; Salonen, Jarno; Lehto, Vesa-Pekka

2007-05-01

A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.

The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

NASA Astrophysics Data System (ADS)

Liang, Hengmao; Liu, Mifeng; Liu, Song; Xu, Dehui; Xiong, Bin

2018-01-01

KOH etching and Au/Si eutectic bonding are cost-efficient technologies for 3D device fabrication. Aimed at investigating the process compatibility of KOH etching and Au/Si bonding, KOH etching tests have been carried out for Au/bulk Si and Au/amorphous Si (a-Si) bonding wafers in this paper. For the Au/bulk Si bonding wafer, a serious underetch phenomenon occurring on the damage layer in KOH etching definitely results in packaging failure. In the microstructure analysis, it is found that the formation of the damage layer between the bonded layer and bulk Si is attributed to the destruction of crystal Si lattices in Au/bulk Si eutectic reaction. Considering the occurrence of underetch for Au/Si bonding must meet two requirements: the superfluous Si and the defective layer near the bonded layer, the Au/a-Si bonding by regulating the a-Si/Au thickness ratio is presented in this study. Only when the a-Si/Au thickness ratio is relatively low are there not underetch phenomena, of which the reason is the full reaction of the a-Si layer avoiding the formation of the damage layer for easy underetch. Obviously, the Au/a-Si bonding via choosing a moderate a-Si/Au thickness ratio (⩽1.5:1 is suggested) could be reliably compatible with KOH etching, which provides an available and low-cost approach for 3D device fabrication. More importantly, the theory of the damage layer proposed in this study can be naturally applied to relevant analyses on the eutectic reaction of other metals and single crystal materials.

Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems

PubMed Central

Tian, Yanpei; Zhang, Sinong; Cui, Yali; Zheng, Yi

2017-01-01

In this work, we theoretically analyze the performance characteristics of a near-field thermophotovoltaic system consisting a Mie-metamaterial emitter and GaSb-based photovoltaic cell at separations less than the thermal wavelength. The emitter consists of a tungsten nanoparticle-embedded thin film of SiO2 deposited on bulk tungsten. Numerical results presented here are obtained using formulae derived from dyadic Green’s function formalism and Maxwell-Garnett-Mie theory. We show that via the inclusion of tungsten nanoparticles, the thin layer of SiO2 acts like an effective medium that enhances selective radiative heat transfer for the photons above the band gap of GaSb. We analyze thermophotovoltaic (TPV) performance for various volume fractions of tungsten nanoparticles and thicknesses of SiO2. PMID:28773241

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Sookyung; Li, Xiaolin; Zheng, Jianming

With the ever increasing demands on Li-ion batteries with higher energy densities, alternative anode with higher reversible capacity is required to replace the conventional graphite anode. Here, we demonstrate a cost-effective hydrothermal-carbonization approach to prepare the hard carbon coated nano-Si/graphite (HC-nSi/G) composite as a high performance anode for Li-ion batteries. In this hierarchical structured composite, the hard carbon coating layer not only provides an efficient pathway for electron transfer, but also alleviates the volume variation of silicon during charge/discharge processes. The HC-nSi/G composite electrode shows excellent electrochemical performances including a high specific capacity of 878.6 mAh g-1 based on themore » total weight of composite, good rate performance and a decent cycling stability, which is promising for practical applications.« less

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices

NASA Astrophysics Data System (ADS)

Li, Jinchai; Yang, Weihuang; Li, Shuping; Chen, Hangyang; Liu, Dayi; Kang, Junyong

2009-10-01

The internal electric field is modified by using Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices (SLs). The first-principles simulation results show that the internal electric field in SL has been significantly intensified due to the charge transferring from Si-doped interface to Mg-doped interface. Accordingly, the Mg- and Si-δ-codoped p-type Al0.2Ga0.8N/GaN SLs are grown by metalorganic vapor phase epitaxy and higher hole concentration as much as twice of that in modulation-doped SL has been achieved, as determined by Hall effect measurements. Furthermore, by applying Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN SLs with high Al content as the p-type layers, we have fabricated deep ultraviolet light emitting diodes with superior current-voltage characteristics by lowering Mg-acceptor activation energy.

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE PAGES

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; ...

2016-11-18

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1997-01-01

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

Strained multilayer structures with pseudomorphic GeSiSn layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Timofeev, V. A., E-mail: Vyacheslav.t@isp.nsc.ru; Nikiforov, A. I.; Tuktamyshev, A. R.

2016-12-15

The temperature and composition dependences of the critical thickness of the 2D–3D transition for a GeSiSn film on Si(100) have been studied. The regularities of the formation of multilayer structures with pseudomorphic GeSiSn layers directly on a Si substrate, without relaxed buffer layers, were investigated for the first time. The possibility of forming multilayer structures based on pseudomorphic GeSiSn layers has been shown and the lattice parameters have been determined using transmission electron microscopy. The grown structures demonstrate photoluminescence for Sn contents from 3.5 to 5% in GeSiSn layers.

Iron silicide formation at different layers of (Fe/Si)3 multilayered structures determined by conversion electron Mössbauer spectroscopy

NASA Astrophysics Data System (ADS)

Badía-Romano, L.; Rubín, J.; Magén, C.; Bürgler, D. E.; Bartolomé, J.

2014-07-01

The morphology and the quantitative composition of the Fe-Si interface layer forming at each Fe layer of a (Fe/Si)3 multilayer have been determined by means of conversion electron Mössbauer spectroscopy (CEMS) and high-resolution transmission electron microscopy (HRTEM). For the CEMS measurements, each layer was selected by depositing the Mössbauer active 57Fe isotope with 95% enrichment. Samples with Fe layers of nominal thickness dFe = 2.6 nm and Si spacers of dSi = 1.5 nm were prepared by thermal evaporation onto a GaAs(001) substrate with an intermediate Ag(001) buffer layer. HRTEM images showed that Si layers grow amorphous and the epitaxial growth of the Fe is good only for the first deposited layer. The CEMS spectra show that at all Fe/Si and Si/Fe interfaces a paramagnetic c-Fe1-xSi phase is formed, which contains 16% of the nominal Fe deposited in the Fe layer. The bottom Fe layer, which is in contact with the Ag buffer, also contains α-Fe and an Fe1-xSix alloy that cannot be attributed to a single phase. In contrast, the other two layers only comprise an Fe1-xSix alloy with a Si concentration of ≃0.15, but no α-Fe.

The reduction of critical H implantation dose for ion cut by incorporating B-doped SiGe/Si superlattice into Si substrate

NASA Astrophysics Data System (ADS)

Xue, Zhongying; Chen, Da; Jia, Pengfei; Wei, Xing; Di, Zengfeng; Zhang, Miao

2016-11-01

An approach to achieve Si or SiGe film exfoliation with as low as 3 × 1016/cm2 H implantation dose was investigated. Two intrinsic Si0.75Ge0.25/Si samples, merged with B-doped Si0.75Ge0.25 layer and B-doped Si0.75Ge0.25/Si superlattice (SL) layer respectively, were used to study the formation of crack after 3 × 1016/cm2 H implantation and annealing. For the sample into which B doped Si0.75Ge0.25 layer is incorporated, only few discrete cracks are observed along both sides of the B doped Si0.75Ge0.25 layer; on the contrary, a continuous (100) oriented crack is formed in the B-doped Si0.75Ge0.25/Si SL layer, which means ion cut can be achieved using this material with 3 × 1016/cm2 H implantation. As the SIMS profiles confirm that hydrogen tends to be trapped at B-doped SiGe/Si interface, the formation of continuous crack in SL layer can be ascribed to the more efficient hydrogen trapping by the multiple B-doped SiGe/Si interfaces.

Low-stress PECVD amorphous silicon carbide (α-SiC) layers for biomedical application

NASA Astrophysics Data System (ADS)

Wei, Jiashen; Chen, Bangtao; Poenar, Daniel P.; Lee, Yong Yeow; Iliescu, Ciprian

2008-12-01

A detailed characterization of PECVD to produce low stress amorphous silicon carbide (α-SiC) layers at high deposition rate has been done and the biomedical applications of α-SiC layers are reported in this paper. By investigating different working principles in high-frequency mode (13.56MHz) and in low frequency mode (380KHz), it is found that deposition in high-frequency mode can achieve low stress layers at high deposition rates due to the structural rearrangement from high HF power, rather than the ion bombardment effect from high LF power which results in high compressive stress for α-SiC layers. Furthermore, the effects of deposition temperature, pressure and reactant gas ratios are also investigated and then an optimal process is achieved to produce low stress α-SiC layers with high deposition rates. To characterize the PECVD α-SiC layers from optimized process, a series of wet etching experiments in KOH and HF solutions have been completed. The very low etching rates of PECVD α-SiC layers in these two solutions show the good chemical inertness and suitability for masking layers in micromachining. Moreover, cell culture tests by seeding fibroblast NIH3T3 cells on the monocrystalline SiC, low-stress PECVD α-SiC released membranes and non-released PECVD α-SiC films on silicon substrates have been done to check the feasibility of PECVD α-SiC layers as substrate materials for biomedical applications. The results indicate that PECVD α-SiC layers are good for cell culturing, especially after treated in NH4F.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Eun-Kyeong; Yeong Kim, Ji; Sub Kim, Sang, E-mail: sangsub@inha.ac.kr

We describe the preparation of superhydrophobic SiO{sub 2} layers through a combination of surface roughness and fluorination. Electrospraying SiO{sub 2} precursor solutions that were prepared by a sol-gel route and included trichloro(1H,1H,2H,2H-perfluorooctyl)silane as a fluorination source produced highly rough, fluorinated SiO{sub 2} layers. In sharp contrast to the fluorinated flat SiO{sub 2} layer, the fluorinated rough SiO{sub 2} layer showed much enhanced repellency toward liquid droplets of different surface tensions. The surface fraction and the work of adhesion of the superhydrophobic SiO{sub 2} layers were determined, respectively, based on Cassie-Baxter and Young-Dupre equations. The satisfactory long-term stability for 30 days,more » the ultraviolet resistance and the thermal stability up to 400 {sup o}C of the superhydrophobic SiO{sub 2} layers prepared in this work confirm a promising practical application. - Graphical abstract: A schematic illustration of the electrospray deposition used for preparing SiO{sub 2} layers. Shapes of liquid droplets of water, glycerol, coffee, juice and milk created on the fluorinated rough SiO{sub 2} layer deposited on a silicon wafer. Highlights: Black-Right-Pointing-Pointer Superhydrophobic SiO{sub 2} layers are realized by a combination of surface roughness and fluorination. Black-Right-Pointing-Pointer The fluorinated rough SiO{sub 2} layer shows enhanced repellency toward various liquid droplets. Black-Right-Pointing-Pointer The wetting behavior is explained based on Cassie-Baxter and Young-Dupre equations. Black-Right-Pointing-Pointer The superhydrophobic SiO{sub 2} layers confirm a promising practical application.« less

Enhanced photoelectrochemical properties of copper-assisted catalyzed etching black silicon by electrodepositing cobalt

NASA Astrophysics Data System (ADS)

Cai, Weidong; Xiong, Haiying; Su, Xiaodong; Zhou, Hao; Shen, Mingrong; Fang, Liang

2017-11-01

Black silicon (Si) photoelectrodes are promising for improving the performance of photoelectrochemical (PEC) water splitting. Here, we report the fabrication of p-black Si and n+p-black Si photocathodes via a controllable copper-assisted catalyzed etching method. The etching process affects only the topmost less than 200 nm of Si and is independent of the surface doping. The synergistic effects of the excellent light harvesting of the black Si and the improved charge transfer properties of the p-n junction boost the production and utilization of photogenerated carriers. The mean reflectance of the pristine Si samples is about 10% from 400 to 950 nm, while that of the black Si samples is reduced as low as 5%. In addition, the PEC properties of the n+p-black Si photocathode can be further enhanced by depositing a cobalt (Co) layer. Compared with the p-Si sample, the onset potential of the Co/n+p-black Si photocathode is positively shifted by 560 mV to 0.33 V vs. reversible hydrogen electrode and the saturation photocurrent density is increased from 22.7 to 32.6 mA/cm2. The design of the Co/n+p-black Si photocathode offers an efficient strategy for preparing PEC solar energy conversion devices.

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

NASA Astrophysics Data System (ADS)

Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

2017-06-01

We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

NASA Technical Reports Server (NTRS)

George, T.; Fathauer, R. W.

1992-01-01

The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

The microstructure of the surface layer of magnesium laser alloyed with aluminum and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dziadoń, Andrzej

2016-08-15

The surface layer under analysis was formed as a result of diffusion bonding of a thin AlSi20 plate to a magnesium substrate followed by laser melting. Depending on the process parameters, the laser beam melted the AlSi20 plate only or the AlSi20 plate and a layer of the magnesium surface adjacent to it. Two types of microstructure of the remelted layer were thus analyzed. If the melting zone was limited to the AlSi20 plate, the microstructure of the surface layer was typical of a rapidly solidified hypereutectic Al–Si alloy. Since, however, the liquid AlSi20 reacted with the magnesium substrate, themore » following intermetallic phases formed: Al{sub 3}Mg{sub 2}, Mg{sub 17}Al{sub 12} and Mg{sub 2}Si. The microstructure of the modified surface layer of magnesium was examined using optical, scanning electron and transmission electron microscopy. The analysis of the surface properties of the laser modified magnesium revealed that the thin layer has a microstructure of a rapidly solidified Al–Si alloy offering good protection against corrosion. By contrast, the surface layer containing particles of intermetallic phases was more resistant to abrasion but had lower corrosion resistance than the silumin type layer. - Highlights: •A CO{sub 2} laser was used for surface alloying of Mg with AlSi20. •Before alloying, an AlSi20 plate was diffusion bonded with the Mg substrate. •The process parameters affected the alloyed layer microstructure and properties. •With melting limited to AlSi20, the layer had a structure of rapidly solidified AlSi20. •Mg–Al and Mg–Si phases were present when both the substrate and the plate were melted.« less

A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

PubMed

Wang, Min; Jang, Sung Kyu; Jang, Won-Jun; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Ruoff, Rodney S; Song, Young Jae; Lee, Sungjoo

2013-05-21

Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates.

PubMed

Lee, Changhee; Rathi, Servin; Khan, Muhammad Atif; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo-Hyeb; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho

2018-08-17

Molybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 -SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm -2 on hBN substrate as compared to 1.1 × 10 12 cm -2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

NASA Astrophysics Data System (ADS)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

NASA Astrophysics Data System (ADS)

Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

2017-08-01

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

Silicene-terminated surface of calcium and strontium disilicides: properties and comparison with bulk structures by computational methods

NASA Astrophysics Data System (ADS)

Brázda, Petr; Mutombo, Pingo; Ondráček, Martin; Corrêa, Cinthia Antunes; Kopeček, Jaromír; Palatinus, Lukáš

2018-05-01

The bulk and surface structures of calcium and strontium disilicides are investigated by computational methods using density functional theory. The investigated structures are R6, R3 and P1-CaSi2 and P1-SrSi2. The investigated properties are the cleavage energy at the silicene sheet, buckling of the bulk and surface silicene layers, charge transfer from calcium to silicon, band structure of bulk and surface-terminated structures and adsorption energies on H atoms and H2 molecules on the silicene-terminated surface of the R3 phase. The cleavage energy at the silicene surface is low in all cases. Structures P1-CaSi2 and R3-CaSi2 contain silicene sheets with different coordination to Ca, while R6-CaSi2 contains both types of the sheets. It is shown that the properties of the two types of silicene-like sheets in R6-CaSi2 are similar to those of the corresponding sheets in P1-CaSi2 and R3-CaSi2, and the thermodynamically stable R6 phase is a good candidate for experimental investigation of silicene-terminated surface in calcium disilicide.

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

PubMed

Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon

2008-10-01

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a modelmore » taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.« less

Organic thin film transistors using a liquid crystalline palladium phthalocyanine as active layer

NASA Astrophysics Data System (ADS)

Jiménez Tejada, Juan A.; Lopez-Varo, Pilar; Chaure, Nandu B.; Chambrier, Isabelle; Cammidge, Andrew N.; Cook, Michael J.; Jafari-Fini, Ali; Ray, Asim K.

2018-03-01

70 nm thick solution-processed films of a palladium phthalocyanine (PdPc6) derivative bearing eight hexyl (-C6H13) chains at non-peripheral positions have been employed as active layers in the fabrication of bottom-gate bottom-contact organic thin film transistors (OTFTs) deposited on highly doped p-type Si (110) substrates with SiO2 gate dielectric. The dependence of the transistor electrical performance upon the mesophase behavior of the PdPc6 films has been investigated by measuring the output and transfer characteristics of the OTFT having its active layer ex situ vacuum annealed at temperatures between 500 °C and 200 °C. A clear correlation between the annealing temperature and the threshold voltage and carrier mobility of the transistors, and the transition temperatures extracted from the differential scanning calorimetric curves for bulk materials has been established. This direct relation has been obtained by means of a compact electrical model in which the contact effects are taken into account. The precise determination of the contact-voltage drain-current curves allows for obtaining such a relation.

Magnetic and electrical properties of FeSi/FeSi-ZrO 2 multilayers prepared by EB-PVD

NASA Astrophysics Data System (ADS)

Bi, Xiaofang; Lan, Weihua; Ou, Shengquan; Gong, Shengkai; Xu, Huibin

2003-04-01

FeSi/FeSi-ZrO 2 and FeSi/ZrO 2 multilayer materials were prepared by electron beam physical vapor deposition with the FeSi-ZrO 2 layer thickness about 0.6 μm, and their magnetic and electrical properties were studied as a function of FeSi layer thickness. With increasing FeSi layer thickness from 0.3 to 3 μm, the coercivity decreased from 0.92 to 0.31 kA/m and the saturation magnetization changed from 164 to 186 emu/g. The effect of the layer number on the magnetic properties was discussed in terms of interfacial mixing and oxidation. It was also discovered that the magnetic properties of the multilayer materials were affected by the spacer material, exhibiting higher saturation magnetization and lower coercivity for the FeSi/FeSi-ZrO 2 than those for the FeSi/ZrO 2 with the same individual layer thicknesses. This behavior could be explained by the weaker magnetic interaction between FeSi layers separated by the non-magnetic ZrO 2 layer. Furthermore, the electrical resistivity changed from 1850 to 1250 μΩ cm for the multilayer materials for the FeSi thickness increasing from 0.30 to 3 μm.

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.

PubMed

Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Chen, Ying-Chen; Lee, Jong-Ho; Park, Byung-Gook

2017-07-26

Here we demonstrate low-power resistive switching in a Ni/SiN y /SiN x /p ++ -Si device by proposing a double-layered structure (SiN y /SiN x ), where the two SiN layers have different trap densities. The LRS was measured to be as low as 1 nA at a voltage of 1 V, because the SiN x layer maintains insulating properties for the LRS. The single-layered device suffers from uncontrollability of the conducting path, accompanied by the inherent randomness of switching parameters, weak immunity to breakdown during the reset process, and a high operating current. On the other hand, for a double-layered device, the effective conducting path in each layer, which can determine the operating current, can be well controlled by the I CC during the initial forming and set processes. A one-step forming and progressive reset process is observed for a low-power mode, which differs from the high-power switching mode that shows a two-step forming and reset process. Moreover, nonlinear behavior in the LRS, whose origin can be attributed to the P-F conduction and F-N tunneling driven by abundant traps in the silicon-rich SiN x layer, would be beneficial for next-generation nonvolatile memory applications by using a conventional passive SiN x layer as an active dielectric.

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

NASA Technical Reports Server (NTRS)

Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

1988-01-01

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique

NASA Technical Reports Server (NTRS)

D'Anterroches, Cecile; Yakupoglu, H. Nejat; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

1988-01-01

Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 C. At 600 C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.

Final Report: Hot Carrier Collection in Thin Film Silicon with Tailored Nanocrystalline/Amorphous Structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins, Reuben T.

This project developed, characterized, and perfected a new type of highly tunable nanocrystalline silicon (nc-Si:H) incorporating quantum confined silicon nanoparticles (SiNPs). A dual zone deposition process and system were developed and demonstrated. The depositions of SiNPs, the amorphous phase, and co-deposited material were characterized and optimized. Material design and interpretation of results were guided by new theoretical tools that examined both the electronic structure and carrier dynamics of this hybrid material. Heterojunction and p-i-n solar cells were demonstrated and characterized. Photo-thin-film-transistors allowed mobility to be studied as a function SiNP density in the films. Rapid (hot) transfer of carriers frommore » the amorphous matrix to the quantum confined SiNPs was observed and connected to reduced photo-degradation. The results carry quantum confined Si dots from a novelty to materials that can be harnessed for PV and optoelectronic applications. The growth process is broadly extendable with alternative amorphous matrices, novel layered structures, and alternative NPs easily accessible. The hot carrier effects hold the potential for third generation photovoltaics.« less

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer

NASA Astrophysics Data System (ADS)

Seo, Hong-Kyu; Kim, Kyunghun; Min, Sung-Yong; Lee, Yeongjun; Eon Park, Chan; Raj, Rishi; Lee, Tae-Woo

2017-06-01

To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.

Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

NASA Astrophysics Data System (ADS)

Seifarth, O.; Dietrich, B.; Zaumseil, P.; Giussani, A.; Storck, P.; Schroeder, T.

2010-10-01

Strained and relaxed single crystalline Si on insulator systems is an important materials science approach for future Si-based nanoelectronics. Layer transfer techniques are the dominating global integration approach over the whole wafer system but are difficult to scale down for local integration purposes limited to the area of the future device. In this respect, the heteroepitaxy approach by two simple subsequent epitaxial deposition steps of the oxide and the Si thin film is a promising way. We introduce tailored (Pr2O3)1-x(Y2O3)x oxide heterostructures on Si(111) as flexible heteroepitaxy concept for the integration of either strained or fully relaxed single crystalline Si thin films. Two different buffer concepts are explored by a combined experimental and theoretical study. First, the growth of fully relaxed single crystalline Si films is achieved by the growth of mixed PrYO3 insulators on Si(111) whose lattice constant is matched to Si. Second, isomorphic oxide-on-oxide epitaxy is exploited to grow strained Si films on lattice mismatched Y2O3/Pr2O3/Si(111) support systems. A thickness dependent multilayer model, based on Matthew's approach for strain relaxation by misfit dislocations, is presented to describe the experimental data.

The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2014-08-18

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

NASA Astrophysics Data System (ADS)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Porous nC-Si/SiOx nanostructured layer on Si substrate with tunable photoluminescent properties fabricated by direct, precursor-free microplasma irradiation in air

NASA Astrophysics Data System (ADS)

Wang, Tao; Hu, Mingshan; Yang, Bin; Wang, Xiaolin; Liu, Jingquan

2018-03-01

Porous nC-Si/SiOx photoluminescent nanostructured layer is fabricated by direct, precursor-free microplasma irradiation on Si substrate in air. It is confirmed that the deposited layer has porous and cluster-like structures by scanning electron microscopy (SEM) and profile scanning. Fourier transform infrared transmission (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectrum (XPS) results indicate the produced layer is actually composed of nanocrystalline silicon (nC-Si) embedded in SiOx matrix. Transmission electron microscopy (TEM) and Raman results show the mean particle size of nC-Si is mainly between 2 and 4 nm and the highest crystalline volume fraction reaches 86.9%. The photoluminescence (PL) measurement of nC-Si/SiOx layer exhibited a broad band centered at 1.7-1.9 eV, ranging from 1.2-2.4 eV, and could be tuned by varying the applied voltage. The synthetical mechanisms are discussed to explain the PL properties of the layers. We propose that the energetic ions bombing induced by high compressed electric field near the Si surface is the main reason for porous nC-Si/SiOx formation. Maskless deposition of the line pattern of nC-Si/SiOx layer was also successfully fabricated. This simple, maskless, vacuum-free and precursor-free technique could be used in various potential optoelectronics and biological applications in the future.

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

PubMed

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

Properties of various silicon oxide phases in thin films

NASA Technical Reports Server (NTRS)

Ritter, E.

1980-01-01

Layers of SiO2 with reproducible properties can be manufactured relatively easily today. In the case of SiO and Si2O3 layers, it is necessary to carefully check all of the manufacturing parameters for producing layers with reproducible properties. The properties of the layers in the case of SiO2 do conform to expectations. In the case of Si2O3 and SiO, they can be understood at least qualitatively. Additional interesting models are available for a quantitative understanding.

Epitaxial CoSi2 on MOS devices

DOEpatents

Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

2005-01-25

An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

High-fluence Ga-implanted silicon-The effect of annealing and cover layers

NASA Astrophysics Data System (ADS)

Fiedler, J.; Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W.

2014-07-01

The influence of SiO2 and SiNx cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiOx grown during annealing which only can be avoided by the usage of SiNx cover layers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Drozdov, M. N.; Yunin, P. A.

It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parametersmore » of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.« less

Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

2017-10-01

Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g-1 at the 150th cycle at C/2 current density, and 1200 mAh g-1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan

2015-07-15

GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grownmore » with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.« less

Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

PubMed

Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

2017-10-11

It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(0001[combining macron]) substrates and the design of graphene/TiC/SiC-based electronic devices.

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO 2 buffer layer-coated polymer substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Yu, Zhi-nong; Zhao, Jian-jian; Xia, Fan; Lin, Ze-jiang; Zhang, Dong-pu; Leng, Jian; Xue, Wei

2011-03-01

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

NASA Astrophysics Data System (ADS)

Wen, Xixing; Zeng, Xiangbin; Zheng, Wenjun; Liao, Wugang; Feng, Feng

2015-01-01

The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices.

Nanoimprinted backside reflectors for a-Si:H thin-film solar cells: critical role of absorber front textures.

PubMed

Tsao, Yao-Chung; Fisker, Christian; Pedersen, Thomas Garm

2014-05-05

The development of optimal backside reflectors (BSRs) is crucial for future low cost and high efficiency silicon (Si) thin-film solar cells. In this work, nanostructured polymer substrates with aluminum coatings intended as BSRs were produced by positive and negative nanoimprint lithography (NIL) techniques, and hydrogenated amorphous silicon (a-Si:H) was deposited hereon as absorbing layers. The relationship between optical properties and geometry of front textures was studied by combining experimental reflectance spectra and theoretical simulations. It was found that a significant height variation on front textures plays a critical role for light-trapping enhancement in solar cell applications. As a part of sample preparation, a transfer NIL process was developed to overcome the problem of low heat deflection temperature of polymer substrates during solar cell fabrication.

Development of Si3N4 and SiC of improved toughness. [for gas turbine engines

NASA Technical Reports Server (NTRS)

Brennan, J. J.; Hulse, C. O.

1977-01-01

The application of energy absorbing surface layers to Si3N4 and SiC was investigated. Among the layers studied were microcracked materials such as iron titanate and a silica-zircon mixture and porous materials such as reaction sintered Si3N4. Energy absorption due to microcrack extension upon impact was found not to be an important mechanism. Instead, the fivefold improvement in Charpy and ballistic impact at elevated temperature (1250 C and 1370 C) found for Fe2TiO5 was due to plastic deformation while similar improvement found for silica-zircon mixtures at RT was due to crushing of the porous material. Due to thermal expansion mismatch, these two materials could not withstand thermal cycling when used as energy absorbing surface layers on Si3N4. Reaction sintered Si3N4 layers on dense Si3N4 were found to give up to a sevenfold increase in ballistic impact resistance due to crushing of the layer upon impact. High porosity (45%), large particle size R.S. Si3N4 layers fabricated from -100, +200 mesh Si powder gave better impact improvement than less porous (30%), small particle size layers fabricated from -325 mesh Si powder.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thi, Trinh Cham, E-mail: s1240009@jaist.ac.jp; Koyama, Koichi; Ohdaira, Keisuke

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRVmore » is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.« less

Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: Energy transfer vs. optical coupling effects

DOE PAGES

Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; ...

2015-12-07

Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from themore » OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. Lastly, these results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.« less

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Ahlberg, Patrik; Hinnemo, Malkolm; Zhang, Shi-Li; Olsson, Jörgen

2018-03-01

By pretreating the substrate of a graphene field-effect transistor (G-FET), a stable unipolar transfer characteristic, instead of the typical V-shape ambipolar behavior, has been demonstrated. This behavior is achieved through functionalization of the SiO2/Si substrate that changes the SiO2 surface from hydrophilic to hydrophobic, in combination with postdeposition of an Al2O3 film by atomic layer deposition (ALD). Consequently, the back-gated G-FET is found to have increased apparent hole mobility and suppressed apparent electron mobility. Furthermore, with addition of a top-gate electrode, the G-FET is in a double-gate configuration with independent top- or back-gate control. The observed difference in mobility is shown to also be dependent on the top-gate bias, with more pronounced effect at higher electric field. Thus, the combination of top and bottom gates allows control of the G-FET's electron and hole mobilities, i.e., of the transfer behavior. Based on these observations, it is proposed that polar ligands are introduced during the ALD step and, depending on their polarization, result in an apparent increase of the effective hole mobility and an apparent suppressed effective electron mobility.

Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

PubMed

Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

2016-03-21

Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

NASA Astrophysics Data System (ADS)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

Periodic molybdenum disc array for light trapping in amorphous silicon layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jiwei; Deng, Changkai; Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China

2016-05-15

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under lightmore » illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.« less

Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

NASA Astrophysics Data System (ADS)

Arisawa, You; Sawano, Kentarou; Usami, Noritaka

2017-06-01

The influence of ion implantation energies on compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si substrates was investigated. It was found that relaxation ratio can be enhanced over 100% at relatively low implantation energies, and compressive strain in the topmost Si layer is maximized at 45 keV due to large lattice mismatch. Cross-sectional transmission electron microscope images revealed that defects are localized around the hetero-interface between the Si1-xCx layer and the Ar+-implanted Si substrate when the implantation energy is 45 keV, which decreases the amount of defects in the topmost Si layer and the upper part of the Si1-xCx buffer layer.

Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

NASA Technical Reports Server (NTRS)

Manasevit, H. M.; Gergis, I. S.; Jones, A. B.

1982-01-01

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

STM/STS study of graphene directly grown on h-BN films on Cu foils

NASA Astrophysics Data System (ADS)

Jang, Won-Jun; Wang, Min; Jang, Seong-Gyu; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Song, Young; Lee, Sungjoo; Sanit Collaboration; Department Of Physics, Korea University Collaboration; Graphene Research Center, Samsung Advanced Institute Of Technology Collaboration

2013-03-01

Graphene-based devices on standard SiO2 substrate commonly exhibit inferior characteristics relative to the expected intrinsic properties of graphene, due to the disorder existing at graphene-SiO2 interface. Recently, it has been shown that exfoliated and chemical vapor deposition (CVD) graphene transferred onto hexagonal boron nitride (h-BN) possesses significantly reduced charge inhomogeneity, and yields improved device performance. Here we report the scanning tunneling microscopy (STM) and spectroscopy (STS) results obtained from a graphene layer directly grown on h-BN insulating films on Cu foils. STS measurements illustrate that graphene/h-BN film is charge neutral without electronic perturbation from h-BN/Cu substrate. Corresponding Author

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)

NASA Astrophysics Data System (ADS)

Tuilier, M. H.; Wetzel, P.; Pirri, C.; Bolmont, D.; Gewinner, G.

1994-07-01

Auger-electron diffraction (AED) and surface-extended x-ray-absorption fine structure (SEXAFS) have been used to obtain a complete description of the atomic structure of a two-dimensional epitaxial Er silicide layer on Si(111). AED reveals that a monolayer of Er is located underneath a buckled Si double layer. The relevant Er-Si interlayer spacings are determined by means of single scattering cluster simulations and a R-factor analysis to be 1.92+/-0.05 Å to the first and 2.70+/-0.05 Å to the second Si top layer. Er near-neighbor bond lengths and coordination numbers are obtained independently from polarization-dependent SEXAFS. The SEXAFS data, when combined with the Si top-layer geometry inferred from AED, permit the determination of the atomic positions at the silicide/Si(111) interface. The Er is found to reside in relaxed T4 sites of Si(111) with a single Er-Si distance of 3.09+/-0.04 Å to the first- and second-layer Si atoms of the substrate.

Wet oxidation of GeSi strained layers by rapid thermal processing

NASA Astrophysics Data System (ADS)

Nayak, D. K.; Kamjoo, K.; Park, J. S.; Woo, J. C. S.; Wang, K. L.

1990-07-01

A cold-wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1-x layers on Si substrates. The rate of oxidation of the GexSi1-x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge content in GexSi1-x layer. The oxidation rate of GexSi1-x appears to decrease with increasing oxidation time for the time-temperature cycles considered here. Employing high-frequency and quasi-static capacitance-voltage measurements, it is found that a fixed negative oxide charge density in the range of 1011- 1012/cm2 and the interface trap level density (in the mid-gap region) of about 1012/cm2 eV are present. Further, the density of this fixed interface charge at the SiO2/GeSi interface is found to increase with the Ge concentration in the commensurately grown GeSi layers.

High-fluence Ga-implanted silicon—The effect of annealing and cover layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiedler, J., E-mail: jan.fiedler@hzdr.de; Heera, V.; Hübner, R.

2014-07-14

The influence of SiO{sub 2} and SiN{sub x} cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case,more » Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiO{sub x} grown during annealing which only can be avoided by the usage of SiN{sub x} cover layers.« less

Superhydrophobicity of electrospray-synthesized fluorinated silica layers.

PubMed

Kim, Eun-Kyeong; Lee, Chul-Sung; Kim, Sang Sub

2012-02-15

The preparation of superhydrophobic SiO(2) layers through a combination of a nanoscale surface roughness and a fluorination treatment is reported. Electrospraying SiO(2) precursor solutions that had been prepared by a sol-gel chemical route produced very rough SiO(2) layers. Subsequent fluorination treatment with a solution containing trichloro(1H,1H,2H,2H-perfluorooctyl)silane resulted in highly rough, fluorinated SiO(2) layers. The fluorinated rough SiO(2) layers exhibited excellent repellency toward various liquid droplets. In particular, water repellency of 168° was observed. On the bases of Cassie-Baxter and Young-Dupre equations, the surface fraction and the work of adhesion of the rough, fluorinated SiO(2) layers were respectively estimated. In light of the durability in water, ultraviolet resistance, and thermal stability, the superhydrophobic SiO(2) layers prepared in this work hold promise in a range of practical applications. Copyright © 2011 Elsevier Inc. All rights reserved.

High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices

NASA Technical Reports Server (NTRS)

Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor); King, Glen C. (Inventor); Kim, Hyun-Jung (Inventor); Lee, Kunik (Inventor)

2017-01-01

An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.

Novel Si-Ge-C Superlattices for More than Moore CMOS

DTIC Science & Technology

2016-03-31

diodes can be entirely formed by epitaxial growth, CMOS Active Pixel Sensors can be made with Fully-Depleted SOI CMOS . One important advantage of...a NMOS Transfer Gate (TG), which could be part of a 4T pixel APS. PPDs are preferred in CMOS image sensors for the ability of the pinning layer to...than Moore” with the creation of active photonic devices monolithically integrated with CMOS . Applications include Multispectral CMOS Image Sensors

The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions

NASA Astrophysics Data System (ADS)

Ivanov, P. A.; Potapov, A. S.; Kudoyarov, M. F.; Kozlovskii, M. A.; Samsonova, T. P.

2018-03-01

Irradiation of crystalline n-type silicon carbide ( n-SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i-SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i-SiC layers has been studied. The most high-ohmic ion-irradiated i-SiC layers with room-temperature resistivity of no less than 1.6 × 1013 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 107 Ω cm.

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

NASA Astrophysics Data System (ADS)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-04-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values (θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate (θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM investigations and Raman spectroscopy studies suggest that the presence of graphene layer on the SiC substrate suppresses but does not completely prevent chemical interaction between liquid Cu drop and SiC. Both chemical degradation (etching) and mechanical degradation of the graphene layer during drop rolling due to high adhesion of the Cu drop to the SiC substrate are responsible for mass transfer through the 2nd drop/substrate interface that in turn results in significant changes of structure and chemistry of the drop and the interface.

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

NASA Astrophysics Data System (ADS)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-05-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values ( θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate ( θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM investigations and Raman spectroscopy studies suggest that the presence of graphene layer on the SiC substrate suppresses but does not completely prevent chemical interaction between liquid Cu drop and SiC. Both chemical degradation (etching) and mechanical degradation of the graphene layer during drop rolling due to high adhesion of the Cu drop to the SiC substrate are responsible for mass transfer through the 2nd drop/substrate interface that in turn results in significant changes of structure and chemistry of the drop and the interface.

Nondestructive characterization of textured a-Si:H/c-Si heterojunction solar cell structures with nanometer-scale a-Si:H and In2O3:Sn layers by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Matsuki, Nobuyuki; Fujiwara, Hiroyuki

2013-07-01

Nanometer-scale hydrogenated amorphous silicon (a-Si:H) layers formed on crystalline silicon (c-Si) with pyramid-shaped textures have been characterized by spectroscopic ellipsometry (SE) using a tilt angle measurement configuration, in an attempt to establish a nondestructive method for the structural characterization of the a-Si:H/c-Si heterojunction solar cells. By applying an a-Si:H dielectric function model developed recently, the thickness and SiH2 content of the a-Si:H layer have been determined even on the textured substrates. Furthermore, from the SE analysis incorporating the Drude model, the carrier properties of the In2O3:Sn layers in the textured solar-cell structure have been characterized.

NHC→SiCl4 : an ambivalent carbene-transfer reagent.

PubMed

Böttcher, Tobias; Steinhauer, Simon; Lewis-Alleyne, Lesley C; Neumann, Beate; Stammler, Hans-Georg; Bassil, Bassem S; Röschenthaler, Gerd-Volker; Hoge, Berthold

2015-01-07

The addition of BCl3 to the carbene-transfer reagent NHC→SiCl4 (NHC=1,3-dimethylimidazolidin-2-ylidene) gave the tetra- and pentacoordinate trichlorosilicon(IV) cations [(NHC)SiCl3 ](+) and [(NHC)2 SiCl3 ](+) with tetrachloroborate as counterion. This is in contrast to previous reactions, in which NHC→SiCl4 served as a transfer reagent for the NHC ligand. The addition of BF3 ⋅OEt2 , on the other hand, gave NHC→BF3 as the product of NHC transfer. In addition, the highly Lewis acidic bis(pentafluoroethyl)silane (C2 F5 )2 SiCl2 was treated with NHC→SiCl4 . In acetonitrile, the cationic silicon(IV) complexes [(NHC)SiCl3 ](+) and [(NHC)2 SiCl3 ](+) were detected with [(C2 F5 )SiCl3 ](-) as counterion. A similar result was already reported for the reaction of NHC→SiCl4 with (C2 F5 )2 SiH2 , which gave [(NHC)2 SiCl2 H][(C2 F5 )SiCl3 ]. If the reaction medium was changed to dichloromethane, the products of carbene transfer, NHC→Si(C2 F5 )2 Cl2 and NHC→Si(C2 F5 )2 ClH, respectively, were obtained instead. The formation of the latter species is a result of chloride/hydride metathesis. These compounds may serve as valuable precursors for electron-poor silylenes. Furthermore, the reactivity of NHC→SiCl4 towards phosphines is discussed. The carbene complex NHC→PCl3 shows similar reactivity to NHC→SiCl4 , and may even serve as a carbene-transfer reagent as well. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

About the optical properties of oxidized black silicon structures

NASA Astrophysics Data System (ADS)

Pincik, E.; Brunner, R.; Kobayashi, H.; Mikula, M.; Kučera, M.; Švec, P.; Greguš, J.; Vojtek, P.; Zábudlá, Z.; Imamura, K.; Zahoran, M.

2017-02-01

The paper deals with the optical and morphological properties of thermally oxidized black silicon (OBSi) nano-crystalline specimens produced by the surface structure chemical transfer method (SSCT). This method can produce a nano-crystalline Si black color layer on c-Si with a range of thickness of ∼50 nm to ∼300 nm by the contact of c-Si immersed in chemical solutions HF + H2O2 with a catalytic mesh. We present and discuss mainly the photoluminescence properties of both polished c-Si and OBSi structures, respectively. The similar photoluminescence (PL) behaviors recorded at liquid helium (6 K) and room temperatures on both polished crystalline Si and OBSi samples, respectively, indicate the similar origin of recorded luminescence light. As the positions of PL maxima of OBSi structures are mainly related to the size of Si nanocrystallites and SiO(x), we therefore suppose that the size of the dominant parts of the luminated OBSi nanostructure is pre-determined by the used polishing Si procedure, and/or the distribution function of the number of formed crystallites on their size is very similar. The blue shift of both PL spectra reaching almost value of 0.40 eV observed after the decrease of the sample temperature to 6 K we relate also with the change of the semiconductor band gap width.

Core-shell structured MnSiO3 supported with CNTs as a high capacity anode for lithium-ion batteries.

PubMed

Feng, Jing; Li, Qin; Wang, Huijun; Zhang, Min; Yang, Xia; Yuan, Ruo; Chai, Yaqin

2018-04-17

Metal silicates are good candidates for use in lithium ion batteries (LIBs), however, their electrochemical performance is hindered by their poor electrical conductivity and volume expansion during Li+ insertion/desertion. In this work, one-dimensional core-shell structured MnSiO3 supported with carbon nanotubes (CNTs) (referred to as CNT@MnSiO3) with good conductivity and electrochemical performance has been successfully synthesized using a solvothermal process under moderate conditions. In contrast to traditional composites of CNTs and nanoparticles, the CNT@MnSiO3 composite in this work is made up of CNTs with a layer of MnSiO3 on the surface. The one-dimensional CNT@MnSiO3 nanotubes provide a useful channel for transferring Li+ ions during the discharge/charge process, which accelerates the Li+ diffusion speed. The CNTs inside the structure not only enhance the conductivity of the composite, but also prevent volume expansion. A high reversible capacity (920 mA h g-1 at 500 mA g-1 over 650 cycles) and good rate performance were obtained for CNT@MnSiO3, showing that this strategy of synthesizing coaxial CNT@MnSiO3 nanotubes offers a promising method for preparing other silicates for LIBs or other applications.

Vertically Aligned and Interconnected SiC Nanowire Networks Leading to Significantly Enhanced Thermal Conductivity of Polymer Composites.

PubMed

Yao, Yimin; Zhu, Xiaodong; Zeng, Xiaoliang; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2018-03-21

Efficient heat removal via thermal management materials has become one of the most critical challenges in the development of modern microelectronic devices. However, previously reported polymer composites exhibit limited enhancement of thermal conductivity, even when highly loaded with thermally conductive fillers, because of the lack of efficient heat transfer pathways. Herein, we report vertically aligned and interconnected SiC nanowire (SiCNW) networks as efficient fillers for polymer composites, achieving significantly enhanced thermal conductivity. The SiCNW networks are produced by freeze-casting nanowire aqueous suspensions followed by thermal sintering to consolidate the nanowire junctions, exhibiting a hierarchical architecture in which honeycomb-like SiCNW layers are aligned. The composite obtained by infiltrating SiCNW networks with epoxy resin, at a relatively low SiCNW loading of 2.17 vol %, represents a high through-plane thermal conductivity (1.67 W m -1 K -1 ) compared to the pure matrix, which is equivalent to a significant enhancement of 406.6% per 1 vol % loading. The orderly SiCNW network which can act as a macroscopic expressway for phonon transport is believed to be the main contributor for the excellent thermal performance. This strategy provides insights for the design of high-performance composites with potential to be used in advanced thermal management materials.

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

PubMed

Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

2015-11-06

We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

Thermomechanical Performance of C and SiC Multilayer, Fiber-Reinforced, CVI SiC Matrix Composites

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.; Singh, Mrityunjay

2004-01-01

Hybrid fiber approaches have been attempted in the past to alloy desirable properties of different fiber-types for mechanical properties, thermal stress management, and oxidation resistance. Such an approach has potential for the CrSiC and SiCrSiC composite systems. SiC matrix composites with different stacking sequences of woven C fiber (T300) layers and woven Sic fiber (Hi-NicalonTM) layers were fabricated using the standard CVI process. Delamination occurred to some extent due to thermal mismatch for all of the composites. However, for the composites with a more uniform stacking sequence, minimal delamination occurred, enabling tensile properties to be determined at room temperature and elevated temperatures (stress-rupture in air). Composites were seal-coated with a CVI SiC layer as well as a proprietary C-B-Si (CBS) layer. Definite improvement in rupture behavior was observed in air for composites with increasing SiC fiber content and a CBS layer. The results will be compared to standard C fiber reinforced CVI SiC matrix and Hi-Nicalon reinforced CVI SiC matrix composites.

Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

NASA Astrophysics Data System (ADS)

Carns, Timothy Keith

With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important discovery of mobility and conductivity enhancement in coupled delta-doped layers is highlighted in Chapter 5. Finally, the third part of this work discusses the implementation of boron delta -doped layers in Si homojunction bipolar transistors and FETs. Chapter 6 includes the fabrication of the first coupled delta-doped base layer Si BJT, the first p-type Si delta-doped layer MESFET, the first coupled delta -doped layer FET, and the first SiGe delta -FET.

Structural and electrical investigations of a-Si:H(i) and a-Si:H(n+) stacked layers for improving the interface and passivation qualities

NASA Astrophysics Data System (ADS)

Hsieh, Yu-Lin; Lee, Chien-Chieh; Lu, Chia-Cheng; Fuh, Yiin-Kuen; Chang, Jenq-Yang; Lee, Ju-Yi; Li, Tomi T.

2017-07-01

A symmetrically stacked structure [(a-Si:H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si:H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R=H2/SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

NASA Astrophysics Data System (ADS)

Yokogawa, Takashi; Ishibashi, Kiyohisa; Sakuraba, Masao; Murota, Junichi; Inokuchi, Yasuhiro; Kunii, Yasuo; Kurokawa, Harushige

2008-07-01

Utilizing BCl 3 reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH 4 reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH 4 reaction. It is also found that Si atom amount deposited by SiH 4 reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.

Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation

NASA Astrophysics Data System (ADS)

Baribeau, J.-M.; Lockwood, D. J.; Syme, R. W. G.

1996-08-01

We have used x-ray diffraction, specular reflectivity, and diffuse scattering, complemented by Raman spectroscopy, to study the interfaces in a series of (0.5 nm Ge/2 nm Si)50 atomic layer superlattices on (001)Si grown by molecular beam epitaxy in the temperature range 150-650 °C. X-ray specular reflectivity revealed that the structures have a well-defined periodicity with interface widths of about 0.2-0.3 nm in the 300-590 °C temperature range. Offset reflectivity scans showed that the diffuse scattering peaks at values of perpendicular wave vector transfer corresponding to the superlattice satellite peaks, indicating that the interfaces are vertically correlated. Transverse rocking scans of satellite peaks showed a diffuse component corresponding to an interface corrugation of typical length scale of ˜0.5 μm. The wavelength of the undulations is a minimum along the miscut direction and is typically 30-40 times larger than the surface average terrace width assuming monolayer steps, independently of the magnitude of the wafer misorientation. The amplitude of the undulation evolves with growth temperature and is minimum for growth at ˜460 °C and peaks at ˜520 °C. Raman scattering showed the chemical abruptness of the interfaces at low growth temperatures and indicated a change in the growth mode near 450 °C.

High aspect ratio nano-fabrication of photonic crystal structures on glass wafers using chrome as hard mask.

PubMed

Hossain, Md Nazmul; Justice, John; Lovera, Pierre; McCarthy, Brendan; O'Riordan, Alan; Corbett, Brian

2014-09-05

Wafer-scale nano-fabrication of silicon nitride (Si x N y ) photonic crystal (PhC) structures on glass (quartz) substrates is demonstrated using a thin (30 nm) chromium (Cr) layer as the hard mask for transferring the electron beam lithography (EBL) defined resist patterns. The use of the thin Cr layer not only solves the charging effect during the EBL on the insulating substrate, but also facilitates high aspect ratio PhCs by acting as a hard mask while deep etching into the Si x N y . A very high aspect ratio of 10:1 on a 60 nm wide grating structure has been achieved while preserving the quality of the flat top of the narrow lines. The presented nano-fabrication method provides PhC structures necessary for a high quality optical response. Finally, we fabricated a refractive index based PhC sensor which shows a sensitivity of 185 nm per RIU.

A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals

PubMed Central

2012-01-01

The electroluminescence (EL) and photoluminescence of Si nanocrystals (Si-nc) from multilayered samples of Si/SiO are investigated. Si-nc are formed within Si and SiO layers after furnace annealing. It is found that the presence of Si interlayers creates extra carrier paths for EL emission. A comparative study is further performed on a multilayered Si/SiO sample and a single-layered one with Si and SiO homogeneously mixed. Both samples have the same ratio of Si to O and the same contents of Si and O. The multilayered sample is found to have higher EL intensity, less turn-on voltage, lower resistance, and higher current efficiency than the single-layered one. The results indicate that Si interlayers in Si/SiO may act as carrier channels, which promote carrier transport and enhance the EL emission of Si-nc. PMID:22448989

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

NASA Astrophysics Data System (ADS)

Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C.; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

2017-02-01

Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.

Graphene as transparent electrode in Si solar cells: A dry transfer method

NASA Astrophysics Data System (ADS)

Zang, Yuan; Li, Lian-bi; Chu, Qing; Pu, Hongbin; Hu, Jichao; Jin, Haili; Zhang, Yan

2018-06-01

This paper present an experimental study on a new dry transfer method of graphene applied as transparent conducting electrode in textured silicon solar cells. Raman spectra of dry exfoliated graphene indicated a monolayer graphene was transferred onto textured Si cells and the dry exfoliated graphene with better crystalline quality is attained. Photovoltaic result shows the short circuit current of the dry transferred graphene on texture Si solar cell has an increase of 28% compared to the wet transferred graphene. It proves the possibility of dry transferred graphene as transparent conducting electrode in textured Si solar cell applications.

Influence of Filler Alloy Composition and Process Parameters on the Intermetallic Layer Thickness in Single-Sided Cold Metal Transfer Welding of Aluminum-Steel Blanks

NASA Astrophysics Data System (ADS)

Silvayeh, Zahra; Vallant, Rudolf; Sommitsch, Christof; Götzinger, Bruno; Karner, Werner; Hartmann, Matthias

2017-11-01

Hybrid components made of aluminum alloys and high-strength steels are typically used in automotive lightweight applications. Dissimilar joining of these materials is quite challenging; however, it is mandatory in order to produce multimaterial car body structures. Since especially welding of tailored blanks is of utmost interest, single-sided Cold Metal Transfer butt welding of thin sheets of aluminum alloy EN AW 6014 T4 and galvanized dual-phase steel HCT 450 X + ZE 75/75 was experimentally investigated in this study. The influence of different filler alloy compositions and welding process parameters on the thickness of the intermetallic layer, which forms between the weld seam and the steel sheet, was studied. The microstructures of the weld seam and of the intermetallic layer were characterized using conventional optical light microscopy and scanning electron microscopy. The results reveal that increasing the heat input and decreasing the cooling intensity tend to increase the layer thickness. The silicon content of the filler alloy has the strongest influence on the thickness of the intermetallic layer, whereas the magnesium and scandium contents of the filler alloy influence the cracking tendency. The layer thickness is not uniform and shows spatial variations along the bonding interface. The thinnest intermetallic layer (mean thickness < 4 µm) is obtained using the silicon-rich filler Al-3Si-1Mn, but the layer is more than twice as thick when different low-silicon fillers are used.

Core-shell structured SiO2@YVO4:Dy3+/Sm3+ phosphor particles: sol-gel preparation and characterization.

PubMed

Wang, H; Yu, M; Lin, C K; Lin, J

2006-08-01

Spherical SiO(2) particles have been coated with YVO(4):Dy(3+)/Sm(3+) phosphor layers by a Pechini sol-gel process, leading to the formation of core-shell structured SiO(2)@YVO(4):Dy(3+)/Sm(3+) particles. X-ray diffraction (XRD), Fourier-transform IR spectroscopy, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting SiO(2)@YVO(4):Dy(3+)/Sm(3+) core-shell phosphors. The obtained core-shell phosphors have perfect spherical shape with narrow size distribution (average size ca. 300 nm), smooth surface and non-agglomeration. The thickness of shells could be easily controlled by changing the number of deposition cycles (20 nm for one deposition cycle). The core-shell particles show strong characteristic emission from Dy(3+) for SiO(2)@YVO(4):Dy(3+) and from Sm(3+) for SiO(2)@YVO(4):Sm(3+) due to an efficient energy transfer from YVO(4) host to them. The PL intensity of Dy(3+) and Sm(3+) increases with raising the annealing temperature and the number of coating cycles.

Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

PubMed

Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

2016-12-01

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

About complex refractive index of black Si

NASA Astrophysics Data System (ADS)

Pinčík, Emil; Brunner, Robert; Kobayashi, Hikaru; Mikula, Milan

2017-12-01

The paper deals with the complex refractive index in the IR light region of two types of samples (i) as prepared black silicon, and (ii) thermally oxidized black silicon (BSi) nano-crystalline specimens produced both by the surface structure chemical transfer method using catalytic Ag evaporated spots (as prepared sample) and by the catalytic Pt catalytic mesh (thermally oxidized sample). We present, compare, and discuss the values of the IR complex refractive index obtained by calculation using the Kramers-Krönig transformation. Results indicate that small differences between optical properties of as prepared black Si and thermally oxidized BSi are given by: (i) - oxidation procedure, (ii) - thickness of the formed black Si layer, mainly, not by utilization of different catalytic metals, and by iii) the different thickness. Contamination of the surface by different catalytic metals contributes almost equally to the calculated values of the corresponding complex refractive index.

Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

NASA Technical Reports Server (NTRS)

Heyd, A. R.; Alterovitz, S. A.; Croke, E. T.

1995-01-01

Si(x)Ge(1-x)heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on Si(x)Ge)1-x) heterostructures on Ge substrates has not received much attention. A Si(x)Ge(1-x) layer on a Si substrate is under compressive strain while Si(x)Ge(1-x) on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content Si(x)Ge(1-x) layers the energy shift algorithm used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize Si(x)Ge(1-x)/Ge superlattices grown on Ge substrates. The results agree closely with high resolution x-ray diffraction measurements made on the same samples. The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded Si(x)Ge(1-x) layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 micrometer Si(x)Ge(1-x) layer linearly graded in the range 0.5 less than or equal to x less than or equal to 1.0.

Structural and electronic properties of the transition layer at the SiO{sub 2}/4H-SiC interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wenbo; Wang, Dejun, E-mail: dwang121@dlut.edu.cn; Zhao, Jijun

Using first-principles methods, we generate an amorphous SiO{sub 2}/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiC{sub x}O{sub y} species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiC{sub x}O{sub y} structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO{sub 5} configurations, which lead tomore » the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO{sub 5} configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO{sub 2}/SiC interface.« less

Low cost sol-gel derived SiC-SiO2 nanocomposite as anti reflection layer for enhanced performance of crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jannat, Azmira; Lee, Woojin; Akhtar, M. Shaheer; Li, Zhen Yu; Yang, O.-Bong

2016-04-01

This paper describes the preparation, characterizations and the antireflection (AR) coating application in crystalline silicon solar cells of sol-gel derived SiC-SiO2 nanocomposite. The prepared SiC-SiO2 nanocomposite was effectively applied as AR layer on p-type Si-wafer via two step processes, where the sol-gel of precursor solution was first coated on p-type Si-wafer using spin coating at 2000 rpm and then subjected to annealing at 450 °C for 1 h. The crystalline, and structural observations revealed the existence of SiC and SiO2 phases, which noticeably confirmed the formation of SiC-SiO2 nanocomposite. The SiC-SiO2 layer on Si solar cells was found to be an excellent AR coating, exhibiting the low reflectance of 7.08% at wavelengths ranging from 400 to 1000 nm. The fabricated crystalline Si solar cell with SiC-SiO2 nanocomposite AR coating showed comparable power conversion efficiency of 16.99% to the conventional SixNx AR coated Si solar cell. New and effective sol-gel derived SiC-SiO2 AR layer would offer a promising technique to produce high performance Si solar cells with low-cost.

High Temperature Corrosion and Heat Transfer Studies of Zirconium-Silicide Coatings for Light Water Reactor Cladding Applications

NASA Astrophysics Data System (ADS)

Yeom, Hwasung

Experimental results investigating the feasibility of zirconium-silicide coating for accident tolerance of LWR fuel cladding coating was presented. The oxidation resistance of ZrSi2 appeared to be superior to bare Zircaloy-4 in high temperature air. It was shown that micro- and nanostructures consisting of alternating SiO2 and ZrO2 evolved during transient oxidation of ZrSi2, which was explained by spinodal phase decomposition of Zr-Si-O oxide. Coating optimization regarding oxidation resistance was performed mainly using magnetron sputter deposition method. ZrSi 2 coatings ( 3.9 microm) showed improvement of almost two orders of magnitude when compared to bare Zircaloy-4 after air-oxidation at 700 °C for 20-hours. Pre-oxidation of ZrSi2 coating at 700 °C for 5 h significantly mitigated oxygen diffusion in air-oxidation tests at 1000 °C for 1-hour and 1200 °C for 10-minutes. The ZrSi2 coating with the pre-oxidation was found to be the best condition to prevent oxide formation in Zircaloy-4 substrate in the steam condition even if the top surface of the coating was degraded by formation of zirconium-rich oxide layer. Only the ZrSiO4 phase, formed by exposing the ZrSi2 coating at 1400 °C in air, allowed for immobilization of silicon species in the oxide scale in the aqueous environments. A quench test facility was designed and built to study transient boiling heat transfer of modified Zircaloy-4 surfaces (e.g., roughened surfaces, oxidized surfaces, ZrSi2 coated surfaces) at various system conditions (e.g., elevated pressures and water subcooling). The minimum film boiling temperature increased with increasing system pressure and water subcooling, consistent with past literature. Quenching behavior was affected by the types of surface modification regardless of the environmental conditions. Quenching heat transfer was improved by the ZrSi 2 coating, a degree of surface oxidation (deltaox = 3 to 50 microm), and surface roughening (Ra 20 microm). A plausible hypothesis based on transient heat conduction models for liquid-solid contact in quenching process was proposed to explain the enhanced quenching performance. The theoretical model incorporated localized temperature behavior on superheated surface and elucidated bubble dynamics qualitatively, and predicts minimum film boiling temperature of oxidized Zirc-4 surfaces, which were in good agreement with experimental data.

Improving the Strength of the ZrC-SiC and TC4 Brazed Joint Through Fabricating Graded Double-Layered Composite Structure on TC4 Surface

NASA Astrophysics Data System (ADS)

Shi, J. M.; Zhang, L. X.; Chang, Q.; Sun, Z.; Feng, J. C.; Ma, N.

2018-06-01

In order to improve the ZrC-SiC ceramic and TC4 brazed joint property, graded double-layered SiC particles (SiCp)-reinforced TC4-based composite structure (named as GLS for convenience) was designed to relieve the residual stress in the joint. The GLS was successfully fabricated on TC4 substrate by double-layered laser deposition technology before the brazing process. The investigation of the GLS shows that the volume fraction of SiCp in the two composite layers was graded (20 and 39 vol pct, respectively). Ti5Si3 and TiC phases formed in the GLS due to the reaction of SiCp and TC4. The laser power-II (the laser power for the second deposition layer) affected the microstructure of the GLS significantly. Increasing the laser power-II would promote the reaction between the SiCp and TC4. But the high laser power-II made the layer I remelt completely and the two layers became homogeneous rather than graded structure. In the ZrC-SiC and TC4 brazed joint, the CTE (coefficient of thermal expansion) was graded from the TC4 to the ZrC-SiC due to the GLS, and the strength of the joint with the GLS (91 MPa) was higher than that without the GLS (43 MPa).

Grafted Polystyrene Monolayer Brush as Both Negative and Positive Tone Electron Beam Resist.

PubMed

Aydinoglu, Ferhat; Yamada, Hirotaka; Dey, Ripon K; Cui, Bo

2017-05-23

Although spin coating is the most widely used electron-beam resist coating technique in nanolithography, it cannot typically be applied for nonflat or irregular surfaces. Here, we demonstrate that monolayer polystyrene brush can be grafted on substrates and used as both positive and negative electron-beam resist, which can be applied for such unconventional surfaces. Polystyrene is a popular negative resist when using solvent developer but solvent cannot be used for grafted polystyrene brush that is firmly bonded to the substrate. Instead, we employed two unconventional development methods to lead polystyrene brush to positive or negative tone behavior. Negative tone was achieved by thermal development at 300 °C because exposed thus cross-linked polystyrene brush is more thermally stable against vaporization than unexposed linear one. Surprisingly, positive tone behavior occurred when the brush was grafted onto an aluminum (Al) layer and the film stack was developed using diluted hydrofluoric acid (HF) that etched the underlying Al layer. By transferring the patterns into the silicon (Si) substrates using the thin Al layer as a sacrificial hard mask for dry etch, well-defined structures in Si were obtained in two different electron-beam resist tones as well as in nonflat surfaces.

High-speed droplet actuation on single-plate electrode arrays.

PubMed

Banerjee, Arghya Narayan; Qian, Shizhi; Joo, Sang Woo

2011-10-15

This paper reports a droplet-based microfluidic device composed of patterned co-planar electrodes in an all-in-a-single-plate arrangement and coated with dielectric layers for electrowetting-on-dielectric (EWOD) actuation of discrete droplets. The co-planar arrangement is preferred over conventional two-plate electrowetting devices because it provides simpler manufacturing process, reduced viscous drag, and easier liquid-handling procedures. These advantages lead to more versatile and efficient microfluidic devices capable of generating higher droplet speed and can incorporate various other droplet manipulation functions into the system for biological, sensing, and other microfluidic applications. We have designed, fabricated, and tested the devices using an insulating layer with materials having relatively high dielectric constant (SiO(2)) and compared the results with polymer coatings (Cytop) with low dielectric constant. Results show that the device with high dielectric layer generates more reproducible droplet transfer over a longer distance with a 25% reduction in the actuation voltage with respect to the polymer coatings, leading to more energy efficient microfluidic applications. We can generate droplet speeds as high as 26 cm/s using materials with high dielectric constant such as SiO(2). Copyright © 2011. Published by Elsevier Inc.

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.

PubMed

Łaszcz, A; Katcki, J; Ratajczak, J; Tang, Xiaohui; Dubois, E

2006-10-01

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 degrees C, 525 degrees C and 600 degrees C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO(2)/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450-600 degrees C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 degrees C, the Pt top layer vanishes and a (Pt-Er)Si(x) system is formed.

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

NASA Astrophysics Data System (ADS)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

NASA Astrophysics Data System (ADS)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

Characterization of strain relaxation behavior in Si1- x Ge x epitaxial layers by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Park, Seran; Ko, Dae-Hong

2017-11-01

We fabricated fully strained Si0.77Ge0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the effect of oxidation temperatures and times. After the oxidation process, a Ge-rich layer was formed between the oxide and the remaining Si0.77Ge0.23 layer. Using reciprocal space mapping measurements, we confirmed that the strain of the Si0.77Ge0.23 layers was efficiently relaxed after oxidation, with a maximum relaxation value of 70% after oxidation at 850 °C for 120 min. The surface of Si0.77Ge0.23 layer after strain relaxation by dry oxidation was smoother than a thick Si0.77Ge0.23 layer, which achieved a similar strain relaxation value by increasing the film thickness. Additionally, N2 annealing was performed in order to compare its effect on the relaxation compared to dry oxidation and to identify relaxation mechanisms, other than the thermally driven ones, occurring during dry oxidation.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi2 upon H dosing

NASA Astrophysics Data System (ADS)

Wetzel, P.; Pirri, C.; Gewinner, G.

1997-05-01

Hydrogen-induced reconstruction of 2-dimensional (2D) ErSi2 epitaxially grown on Si(111) is studied by Auger-electron diffraction (AED) and low-energy electron diffraction (LEED). The intensity of the Er MNN Auger line is measured vs. polar angle along the [1 - 2 1] and [- 1 2 - 1] azimuths for clean and H-saturated (1 × 1) ErSi2 silicides. The atomic structure of clean 2D silicide, previously established by AED as well as other techniques, consists of a hexagonal monolayer of Er located underneath a buckled Si layer comparable to the Si(111) substrate double layers. Moreover, for clean 2D ErSi2 only the B-type orientation is observed, i.e. the buckled Si top layer is always rotated by 180° around the surface normal relative to the relevant double layers of the substrate. After atomic H saturation, AED reveals drastic changes in the silicide structure involving a major most remarkable reconstruction of the Si bilayer termination. The latter is found to switch from B-type to A-type orientation upon H dosing, i.e. H-saturated 2D ErSi2 exhibits a buckled Si top layer oriented in the same way as the substrate double layers. A comparison with single scattering cluster simulations demonstrates that the latter phenomenon is accompanied by a large expansion of the Er-Si interlayer spacing close to 0.3 Å.

Near-field radiative heat transfer between graphene-covered hyperbolic metamaterials

NASA Astrophysics Data System (ADS)

Hong, Xiao-Juan; Li, Jian-Wen; Wang, Tong-Biao; Zhang, De-Jian; Liu, Wen-Xing; Liao, Qing-Hua; Yu, Tian-Bao; Liu, Nian-Hua

2018-04-01

We propose the use of graphene-covered silicon carbide (SiC) nanowire arrays (NWAs) for theoretical studies of near-field radiative heat transfer. The SiC NWAs exhibit a hyperbolic characteristic at an appropriately selected filling-volume fraction. The surface plasmon supported by graphene and the hyperbolic modes supported by SiC NWAs significantly affect radiative heat transfer. The heat-transfer coefficient (HTC) between the proposed structures is larger than that between SiC NWAs. We also find that the chemical potential of graphene plays an important role in modulating the HTC. The tunability of chemical potential through gate voltage enables flexible control of heat transfer using the graphene-covered SiC NWAs.

Quenching of porous silicon photoluminescence by molecular oxygen and dependence of this phenomenon on storing media and method of preparation of pSi photosensitizer

NASA Astrophysics Data System (ADS)

Balaguer, María; Matveeva, Eugenia

2010-10-01

The quenching of porous silicon photoluminescence (pSi PL) by molecular oxygen has been studied in different storing media in an attempt to clarify the mechanism of the energy transfer from the silicon photosensitizer to the oxygen acceptor. Luminescent materials have been prepared by two methods: electrochemical anodizing and chemical etching. Different structural forms were used: porous layers on silicon wafer and two kinds of differently prepared powder. Dry air and liquid water were employed as storing media; quenching behaviour was under observation until total degradation of quenching properties. Singlet oxygen molecules generation through energy transfer from photoluminescent pSi was the only photosensitizing mechanism observed under dry gas conditions. This PL quenching process was preferentially developed at 760 nm (1.63 eV) that corresponds to the formation of the 1Σ singlet oxygen state. Oxidation of the pSi photosensitizer was the main factor that led to its total deactivation in a time scale of few weeks. Regarding water medium, different photosensitizing behaviour was observed. In watery conditions, two preferred energy levels were found: the one detected in dry gas and another centred at approximately 2.2 eV (550 nm). Formation of reactive oxygen species (ROS) different from singlet oxygen, such as superoxide anion or superoxide radical, can be responsible for the second one. This second quenching process developed gradually after the initial contact of pSi photosensitizer with water and then degraded. The process lasted only several hours. Therefore, functionalization of the pSi photosensitizer is probably required to stabilize its PL and quenching properties in the watery physiological conditions required for biomedical applications.

Layer-by-layer self-assembled graphene oxide/silica microsphere composites as stationary phase for high performance liquid chromatography.

PubMed

Liang, Xiaojing; Liu, Shujuan; Song, Xinwang; Zhu, Yangwen; Jiang, Shengxiang

2012-11-21

Graphene oxide (GO) has been layer-by-layer assembled onto silica microspheres to form a GO/SiO(2) composite stationary phase. All the characterizations of GO/SiO(2) by elemental analysis, Raman spectroscopy and Fourier transformed infrared spectrometry confirmed that with the increase of the assembled layer, GO gradually increases on the silica surface. The chromatographic properties of bare SiO(2) and GO/SiO(2) with different GO assembled layers show that the amount of GO plays an important role in the separation of analytes. Only the appropriate amount of GO on SiO(2) can perform a good chromatographic separation. The comparison between chromatographic performances of bare SiO(2) column, GO/SiO(2)-2 column and C18 commercial column clearly show that GO/SiO(2)-2 and C18 columns obtained a better separation; GO/SiO(2)-2 exhibits a large π-electron system and C18 exhibits hydrophobicity. The eluting order, peak width and resolution of analyte on GO/SiO(2)-2 column was highly dependent on the size of its π-electron system, while on the C18 column the decisive factor is its hydrophobic property.

Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

2018-01-01

We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

PubMed

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth.

PubMed

Islam, Md Ashraful; Kim, Jung Han; Schropp, Anthony; Kalita, Hirokjyoti; Choudhary, Nitin; Weitzman, Dylan; Khondaker, Saiful I; Oh, Kyu Hwan; Roy, Tania; Chung, Hee-Suk; Jung, Yeonwoong

2017-10-11

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS 2 or WS 2 ) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order for them to be technologically viable building-blocks for such emerging technologies, it is critically demanded to grow/integrate them onto flexible or arbitrary-shaped substrates on a large wafer-scale compatible with the prevailing microelectronics processes. However, conventional approaches to assemble them on such unconventional substrates via mechanical exfoliations or coevaporation chemical growths have been limited to small-area transfers of 2D TMD layers with uncontrolled spatial homogeneity. Moreover, additional processes involving a prolonged exposure to strong chemical etchants have been required for the separation of as-grown 2D layers, which is detrimental to their material properties. Herein, we report a viable strategy to universally combine the centimeter-scale growth of various 2D TMD layers and their direct assemblies on mechanically deformable substrates. By exploring the water-assisted debonding of gold (Au) interfaced with silicon dioxide (SiO 2 ), we demonstrate the direct growth, transfer, and integration of 2D TMD layers and heterostructures such as 2D MoS 2 and 2D MoS 2 /WS 2 vertical stacks on centimeter-scale plastic and metal foil substrates. We identify the dual function of the Au layer as a growth substrate as well as a sacrificial layer which facilitates 2D layer transfer. Furthermore, we demonstrate the versatility of this integration approach by fabricating centimeter-scale 2D MoS 2 /single walled carbon nanotube (SWNT) vertical heterojunctions which exhibit current rectification and photoresponse. This study opens a pathway to explore large-scale 2D TMD van der Waals layers as device building blocks for emerging mechanically deformable electronics/optoelectronics.

Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.

PubMed

Qi, Zhengqing John; Hong, Sung Ju; Rodríguez-Manzo, Julio A; Kybert, Nicholas J; Gudibande, Rajatesh; Drndić, Marija; Park, Yung Woo; Johnson, A T Charlie

2015-03-25

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hot Corrosion Behavior of Stainless Steel with Al-Si/Al-Si-Cr Coating

NASA Astrophysics Data System (ADS)

Fu, Guangyan; Wu, Yongzhao; Liu, Qun; Li, Rongguang; Su, Yong

2017-03-01

The 1Cr18Ni9Ti stainless steel with Al-Si/Al-Si-Cr coatings is prepared by slurry process and vacuum diffusion, and the hot corrosion behavior of the stainless steel with/without the coatings is studied under the condition of Na2SO4 film at 950 °C in air. Results show that the corrosion kinetics of stainless steel, the stainless steel with Al-Si coating and the stainless steel with Al-Si-Cr coating follow parabolic laws in several segments. After 24 h corrosion, the sequence of the mass gain for the three alloys is the stainless steel with Al-Si-Cr coating < the stainless steel with Al-Si coating < the stainless steel without any coating. The corrosion products of the three alloys are layered. Thereinto, the corrosion products of stainless steel without coating are divided into two layers, where the outside layer contains a composite of Fe2O3 and FeO, and the inner layer is Cr2O3. The corrosion products of the stainless steel with Al-Si coating are also divided into two layers, of which the outside layer mainly consists of Cr2O3, and the inner layer is mainly SiO2. The corrosion film of the stainless steel with Al-Si-Cr coating is thin and dense, which combines well with substrate. Thereinto, the outside layer is mainly Cr2O3, and the inside layer is Al2O3. In the matrix of all of the three alloys, there exist small amount of sulfides. Continuous and protective films of Cr2O3, SiO2 and Al2O3 form on the surface of the stainless steel with Al-Si and Al-Si-Cr coatings, which prevent further oxidation or sulfide corrosion of matrix metals, and this is the main reason for the much smaller mass gain of the two alloys than that of the stainless steel without any coatings in the 24 h hot corrosion process.

Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry

NASA Astrophysics Data System (ADS)

Bhattacharya, Debarati; Basu, Saibal; Singh, Surendra; Roy, Sumalay; Dev, Bhupendra Nath

2012-12-01

Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni-Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sangsoo; Son, Yong-Hoon; Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers weremore » shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.« less

Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions.

PubMed

Chou, Yi-Chia; Tang, Wei; Chiou, Chien-Jyun; Chen, Kai; Minor, Andrew M; Tu, K N

2015-06-10

Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a Si nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Cherkova, S. G.; Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Kamaev, G. N.; Skuratov, V. A.

2017-08-01

Light-emitting nanoclusters were formed in Si/SiO2 multilayer structures irradiated with 167 MeV Xe ions to the doses of 1011-3  ×  1014 cm-2 and annealed in the forming-gas at 500 °C and in nitrogen at 800-1100 °C, 30 min. The thicknesses were ~4 nm or ~7-8 for the Si, and ~10 nm for the SiO2 layers. The structures were studied using photoluminescence (PL), Raman spectroscopy, and the cross-sectional high resolution transmission electron microscopy (HRTEM). As-irradiated samples showed the PL, correlating with the growth of the ion doses. HRTEM found the layers to be partly disintegrated. The thickness of the amorphous Si layer was crucial. For 4 nm thick Si layers the PL was peaking at ~490 nm, and quenched by the annealing. It was ascribed to the structural imperfections. For the thicker Si layers the PL was peaking at ~600 nm and was attributed to the Si-rich nanoclusters in silicon oxide. The annealing increases the PL intensity and shifts the band to ~790 nm, typical of Si nanocrystals. Its intensity was proportional to the dose. Raman spectra confirmed the nanocrystals formation. All the results obtained evidence the material melting in the tracks for 10-11-10-10 s providing thereby fast diffusivities of the atoms. The thicker Si layers provide more excess Si to create the nanoclusters via a molten state diffusion.

Formation of a Ge-rich Si1-x Ge x (x > 0.9) fin epitaxial layer condensed by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Ko, Dae-Hong

2017-11-01

We have selectively grown an epitaxial Si0.35Ge0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si1-x Ge x (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.

Formation of porous surface layers in reaction bonded silicon nitride during processing

NASA Technical Reports Server (NTRS)

Shaw, N. J.; Glasgow, T. K.

1979-01-01

An effort was undertaken to determine if the formation of the generally observed layer of large porosity adjacent to the as-nitride surfaces of reaction bonded silicon nitrides could be prevented during processing. Isostatically pressed test bars were prepared from wet vibratory milled Si powder. Sintering and nitriding were each done under three different conditions:(1) bars directly exposed to the furnance atmosphere; (2) bars packed in Si powder; (3) bars packed in Si3N4 powder. Packing the bars in either Si of Si3N4 powder during sintering retarded formation of the layer of large porosity. Only packing the bars in Si prevented formation of the layer during nitridation. The strongest bars (316 MPa) were those sintered in Si and nitrided in Si3N4 despite their having a layer of large surface porosity; failure initiated at very large pores and inclusions. The alpha/beta ratio was found to be directly proportional to the oxygen content; a possible explanation for this relationship is discussed.

Improving the corrosion wear resistance of AISI 316L stainless steel by particulate reinforced Ni matrix composite alloying layer

NASA Astrophysics Data System (ADS)

Xu, Jiang; Zhuo, Chengzhi; Tao, Jie; Jiang, Shuyun; Liu, Linlin

2009-01-01

In order to overcome the problem of corrosion wear of AISI 316L stainless steel (SS), two kinds of composite alloying layers were prepared by a duplex treatment, consisting of Ni/nano-SiC and Ni/nano-SiO2 predeposited by brush plating, respectively, and subsequent surface alloying with Ni-Cr-Mo-Cu by a double glow process. The microstructure of the two kinds of nanoparticle reinforced Ni-based composite alloying layers was investigated by means of SEM and TEM. The electrochemical corrosion behaviour of composite alloying layers compared with the Ni-based alloying layer and 316L SS under different conditions was characterized by potentiodynamic polarization test and electrochemical impedance spectroscopy. Results showed that under alloying temperature (1000 °C) conditions, amorphous nano-SiO2 particles still retained the amorphous structure, whereas nano-SiC particles were decomposed and Ni, Cr reacted with SiC to form Cr6.5Ni2.5Si and Cr23C6. In static acidic solution, the corrosion resistance of the composite alloying layer with the brush plating Ni/nano-SiO2 particles interlayer is lower than that of the Ni-based alloying layer. However, the corrosion resistance of the composite alloying layer with the brush plating Ni/nano-SiO2 particles interlayer is prominently superior to that of the Ni-based alloying layer under acidic flow medium condition and acidic slurry flow condition. The corrosion resistance of the composite alloying layer with the brush plating Ni/nano-SiC particles interlayer is evidently lower than that of the Ni-based alloying layer, but higher than that of 316L SS under all test conditions. The results show that the highly dispersive nano-SiO2 particles are helpful in improving the corrosion wear resistance of the Ni-based alloying layer, whereas carbides and silicide phase are deleterious to that of the Ni-based alloying layer due to the fact that the preferential removal of the matrix around the precipitated phase takes place by the chemical attack of an aggressive medium.

Magneto-optical microcavity with Au plasmonic layer

NASA Astrophysics Data System (ADS)

Mikhailova, T. V.; Lyashko, S. D.; Tomilin, S. V.; Karavainikov, A. V.; Prokopov, A. R.; Shaposhnikov, A. N.; Berzhansky, V. N.

2017-11-01

Optical and Faraday rotation spectra of magneto-optical microcavity coated with Au plasmonic layer of gradient thickness were investigated theoretically and experimentally. It was shown that the Tamm plasmon-polaritons mode forms near the long-wavelength edge of photonic band gap. The presence of Au coating of thickness of 90.4 nm increase the Faraday rotation at Tamm plasmon-polaritons and cavity resonances in 1.3 and 7 times, respectively. By transfer matrix method it were found that the incorporation of SiO2 buffer layer with a thickness in the range from 155 to 180 nm between microcavity and Au coating leads to the strong coupling between cavity mode and Tamm plasmon-polaritons. In this case, one or two resonances arise in the vicinity of the cavity mode depending on the thickness of plasmonic layer. The Faraday rotation for coupled mode in twice less than the value of rotation for single cavity mode.

Theoretical prediction of energy release rate for interface crack initiation by thermal stress in environmental barrier coatings for ceramics

NASA Astrophysics Data System (ADS)

Kawai, E.; Umeno, Y.

2017-05-01

As weight reduction of turbines for aircraft engines is demanded to improve fuel consumption and curb emission of carbon dioxide, silicon carbide (SiC) fiber reinforced SiC matrix composites (SiC/SiC) are drawing enormous attention as high-pressure turbine materials. For preventing degradation of SiC/SiC, environmental barrier coatings (EBC) for ceramics are deposited on the composites. The purpose of this study is to establish theoretical guidelines for structural design which ensures the mechanical reliability of EBC. We conducted finite element method (FEM) analysis to calculate energy release rates (ERRs) for interface crack initiation due to thermal stress in EBC consisting of Si-based bond coat, Mullite and Ytterbium (Yb)-silicate layers on a SiC/SiC substrate. In the FEM analysis, the thickness of one EBC layer was changed from 25 μm to 200 μm while the thicknesses of the other layers were fixed at 25 μm, 50 μm and 100 μm. We compared ERRs obtained by the FEM analysis and a simple theory for interface crack in a single-layered structure where ERR is estimated as nominal strain energy in the coating layers multiplied by a constant factor (independent of layer thicknesses). We found that, unlike the case of single-layered structures, the multiplication factor is no longer a constant but is determined by the combination of consisting coating layer thicknesses.

Method for producing high energy electroluminescent devices

DOEpatents

Meyerson, Bernard S.; Scott, Bruce A.; Wolford, Jr., Donald J.

1992-09-29

A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

NASA Astrophysics Data System (ADS)

Frewin, C. L.; Locke, C.; Wang, J.; Spagnol, P.; Saddow, S. E.

2009-08-01

The growth of highly oriented 3C-SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C-SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C-SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C-SiC grains and possessed no 3C-SiC grains oriented along the <3 1 1> and <1 1 0> directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C-SiC structures.

Nanogranular SiO2 proton gated silicon layer transistor mimicking biological synapses

NASA Astrophysics Data System (ADS)

Liu, M. J.; Huang, G. S.; Feng, P.; Guo, Q. L.; Shao, F.; Tian, Z. A.; Li, G. J.; Wan, Q.; Mei, Y. F.

2016-06-01

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO2 proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

Full-range electrical characteristics of WS{sub 2} transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Jatinder; Bellus, Matthew Z.; Chiu, Hsin-Ying, E-mail: chiu@ku.edu

We fabricated transistors formed by few layers to bulk single crystal WS{sub 2} to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10{sup 12} cm{sup –2}) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit onmore » a back-gated device on SiO{sub 2}/Si substrate.« less

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

NASA Astrophysics Data System (ADS)

Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

2017-04-01

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

Disilane-based cyclic deposition/etch of Si, Si:P and Si1-yCy:P layers: I. The elementary process steps

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Deguet, C.

2013-02-01

We have benchmarked the 550 °C, 20 Torr growth of Si:P and Si1-yCy:P using SiH4 and Si2H6. P segregation has prevented us from reaching P+ ion concentrations in Si higher than a few 1019 cm-3 using SiH4; the resulting surface ‘poisoning’ led to a severe growth rate reduction. Meanwhile, [P+] increased linearly with the phosphine flow when using Si2H6 as the Si precursor; values as high as 1.7 × 1020 cm-3 were obtained. The Si:P growth rate using Si2H6 was initially stable then increased as the PH3 flow increased. Mono-methylsilane flows 6.5-10 times higher were needed with Si2H6 than with SiH4 to reach the same substitutional C concentrations in intrinsic Si1-yCy layers ([C]subst. up to 1.9%). Growth rates were approximately six times higher with Si2H6 than with SiH4, however. 30 nm thick Si1-yCy layers became rough as [C]subst. exceeded 1.6% (formation of increasing numbers of islands). We have also studied the structural and electrical properties of ‘low’ and ‘high’ C content Si1-yCy:P layers (˜ 1.5 and 1.8%, respectively) grown with Si2H6. Adding significant amounts of PH3 led to a reduction of the tensile strain in the films. This was due to the incorporation of P atoms (at the expense of C atoms) in the substitutional sites of the Si matrix. Si1-yCy:P layers otherwise became rough as the PH3 flow increased. Resistivities lower than 1 mΩ cm were nevertheless associated with those Si1-yCy:P layers, with P atomic concentrations at most 3.9 × 1020 cm-3. Finally, we have quantified the beneficial impact of adding GeH4 to HCl for the low-temperature etching of Si. Etch rates 12-36 times higher with HCl + GeH4 than with pure HCl were achieved at 20 Torr. Workable etch rates close to 1 nm min-1 were obtained at 600 °C (versus 750 °C for pure HCl), enabling low-temperature cyclic deposition/etch strategies for the selective epitaxial growth of Si, Si:P and Si1-yCy:P layers on patterned wafers.

Structure of nanocrystalline calcium silicate hydrates: insights from X-ray diffraction, synchrotron X-ray absorption and nuclear magnetic resonance.

PubMed

Grangeon, Sylvain; Claret, Francis; Roosz, Cédric; Sato, Tsutomu; Gaboreau, Stéphane; Linard, Yannick

2016-06-01

The structure of nanocrystalline calcium silicate hydrates (C-S-H) having Ca/Si ratios ranging between 0.57 ± 0.05 and 1.47 ± 0.04 was studied using an electron probe micro-analyser, powder X-ray diffraction, 29 Si magic angle spinning NMR, and Fourier-transform infrared and synchrotron X-ray absorption spectroscopies. All samples can be described as nanocrystalline and defective tobermorite. At low Ca/Si ratio, the Si chains are defect free and the Si Q 3 and Q 2 environments account, respectively, for up to 40.2 ± 1.5% and 55.6 ± 3.0% of the total Si, with part of the Q 3 Si being attributable to remnants of the synthesis reactant. As the Ca/Si ratio increases up to 0.87 ± 0.02, the Si Q 3 environment decreases down to 0 and is preferentially replaced by the Q 2 environment, which reaches 87.9 ± 2.0%. At higher ratios, Q 2 decreases down to 32.0 ± 7.6% for Ca/Si = 1.38 ± 0.03 and is replaced by the Q 1 environment, which peaks at 68.1 ± 3.8%. The combination of X-ray diffraction and NMR allowed capturing the depolymerization of Si chains as well as a two-step variation in the layer-to-layer distance. This latter first increases from ∼11.3 Å (for samples having a Ca/Si ratio <∼0.6) up to 12.25 Å at Ca/Si = 0.87 ± 0.02, probably as a result of a weaker layer-to-layer connectivity, and then decreases down to 11 Å when the Ca/Si ratio reaches 1.38 ± 0.03. The decrease in layer-to-layer distance results from the incorporation of interlayer Ca that may form a Ca(OH) 2 -like structure, nanocrystalline and intermixed with C-S-H layers, at high Ca/Si ratios.

Spectroscopic ellipsometry of columnar porous Si thin films and Si nanowires

NASA Astrophysics Data System (ADS)

Fodor, Bálint; Defforge, Thomas; Agócs, Emil; Fried, Miklós; Gautier, Gaël; Petrik, Péter

2017-11-01

Columnar mesoporous Si thin films and dense nanowire (SiNW) carpets were investigated by spectroscopic ellipsometry in the visible-near-infrared wavelength range. Porous Si layers were formed by electrochemical etching while structural anisotropy was controlled by the applied current. Layers of highly oriented SiNWs, with length up to 4.1 μm were synthesized by metal-assisted chemical etching. Ellipsometric spectra were fitted with different multi-layered, effective medium approximation-based (EMA) models. Isotropic, in-depth graded, anisotropic and hybrid EMA models were investigated with the help of the root mean square errors obtained from the fits. Ellipsometric-fitted layer thicknesses were also cross-checked by scanning electron microscopy showing an excellent agreement. Furthermore, in the case of mesoporous silicon, characterization also revealed that, at low current densities (<100 mA/cm2), in-depth inhomogeneity shows a more important feature in the ellipsometric spectra than anisotropy. On the other hand, at high current densities (>100 mA/cm2) this behavior turns around, and anisotropy becomes the dominant feature describing the spectra. Characterization of SiNW layers showed a very high geometrical anisotropy. However, the highest fitted geometrical anisotropy was obtained for the layer composed of ∼1 μm long SiNWs indicating that for thicker layers, collapse of the nanowires occurs.

Effects of a high-gradient magnetic field on the migratory behavior of primary crystal silicon in hypereutectic Al–Si alloy

PubMed Central

Jin, Fangwei; Ren, Zhongming; Ren, Weili; Deng, Kang; Zhong, Yunbo; Yu, Jianbo

2008-01-01

The migration of primary Si grains during the solidification of Al–18 wt%Si alloy under a high-gradient magnetic field has been investigated experimentally. It was found that under a gradient magnetic field, the primary Si grains migrated toward one end of the specimen, forming a Si-rich layer, and the thickness of the Si-rich layer increased with increasing magnetic flux density. No movement of Si grains was apparent under a magnetic field below 2.3 T. For magnetic fields above 6.6 T, however, the thickness of the Si-rich layer was almost constant. It was shown that the static field also played a role in impeding the movement of the grains. The primary Si grains were refined in the Si layer, even though the primary silicon grains were very dense. The effect of the magnetic flux density on the migratory behavior is discussed. PMID:27877953

Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

NASA Astrophysics Data System (ADS)

Randolph, Steven Jeffrey

Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL) parallel electron beam lithography configuration to repair damaged or missing carbon nanofiber cathodes. The I-V response and lithography results from EBID tungsten-based devices were comparable to CNF-based DEAL devices indicating a successful repair technique.

Lift-off process with bi-layer photoresist patterns for conformal-coated superhydrophilic pulsed plasma chemical vapor deposition-SiOx on SiCx for lab-on-a-chip applications

NASA Astrophysics Data System (ADS)

Konishi, Satoshi; Nakagami, Chise; Kobayashi, Taizo; Tonomura, Wataru; Kaizuma, Yoshihiro

2015-04-01

In this work, a lift-off process with bi-layer photoresist patterns was applied to the formation of hydrophobic/hydrophilic micropatterns on practical polymer substrates used in healthcare diagnostic commercial products. The bi-layer photoresist patterns with undercut structures made it possible to peel the conformal-coated silicon oxide (SiOx) films from substrates. SiOx and silicon carbide (SiCx) layers were deposited by pulsed plasma chemical vapor deposition (PPCVD) method which can form roughened surfaces to enhance hydrophilicity of SiOx and hydrophobicity of SiCx. Microfluidic applications using hydrophobic/hydrophilic patterns were also demonstrated on low-cost substrates such as poly(ethylene terephthalate) (PET) and paper films.

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Experimental observation of motion of edge dislocations in Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolkhovityanov, Yu. B., E-mail: bolkhov@isp.nsc.ru; Gutakovskii, A. K.; Deryabin, A. S.

2016-11-15

The Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge{sub x}Si{sub 1–x} buffer layer is 7–35 nm. It is shown that such heterostructures relax in two stages: an ordered network of edge dislocations is formed during their growth (500°C) at the Ge/GeSi interface and then, contrary to the generally accepted opinion concerning their immobility, some of the edge dislocations move through the buffer GeSi layer to the GeSi/Si(001) interface during annealing at higher temperatures and x > 0.3. It is found thatmore » plastic relaxation of the GeSi buffer layer occurs due to motion of dislocation complexes of the edge type, consisting of a pair of complementary 60° dislocations with the ends of (111) extra planes located approximately at a distance from 2 to 12 interplanar spacings. It is shown that the penetration of dislocation complexes into the GeSi buffer layer and further to the GeSi/Si interface is intensified with increasing annealing temperature (600–800°C) and the fraction of Ge in the buffer layer.« less

Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

PubMed

Kim, Soonkon; Choi, Pyungho; Kim, Sangsub; Park, Hyoungsun; Baek, Dohyun; Kim, Sangsoo; Choi, Byoungdeog

2016-05-01

We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

Structure and magnetism in Co/X, Fe/Si, and Fe/(FeSi) multilayers

NASA Astrophysics Data System (ADS)

Franklin, Michael Ray

Previous studies have shown that magnetic behavior in multilayers formed by repeating a bilayer unit comprised of a ferromagnetic layer and a non-magnetic spacer layer can be affected by small structural differences. For example, a macroscopic property such as giant magnetoresistance (GMR) is believed to depend significantly upon interfacial roughness. In this study, several complimentary structural probes were used to carefully characterize the structure of several sputtered multilayer systems-Co/Ag, Co/Cu, Co/Mo, Fe/Si, and Fe//[FeSi/]. X-ray diffraction (XRD) studies were used to examine the long-range structural order of the multilayers perpendicular to the plane of the layers. Transmission electron diffraction (TED) studies were used to probe the long-range order parallel to the layer plane. X-ray Absorption Fine Structure (XAFS) studies were used to determine the average local structural environment of the ferromagnetic atoms. For the Co/X systems, a simple correlation between crystal structure and saturation magnetization is discovered for the Co/Mo system. For the Fe/X systems, direct evidence of an Fe-silicide is found for the /[FeSi/] spacer layer but not for the Si spacer layer. Additionally, differences were observed in the magnetic behavior between the Fe in the nominally pure Fe layer and the Fe contained in the /[FeSi/] spacer layers.

Characterization of crystal structure features of a SIMOX substrate

NASA Astrophysics Data System (ADS)

Eidelman, K. B.; Shcherbachev, K. D.; Tabachkova, N. Yu.; Podgornii, D. A.; Mordkovich, V. N.

2015-12-01

The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy (HRTEM) and an Auger electron spectroscopy (AES) to determine its actual parameters (the thickness of the top Si and a continuous buried oxide layer (BOX), the crystalline quality of the top Si layer). Under used implantation conditions, the thickness of the top Si and BOX layers was 200 nm and 400 nm correspondingly. XRD intensity distribution near Si(0 0 4) reciprocal lattice point was investigated. According to the oscillation period of the diffraction reflection curve defined thickness of the overtop silicon layer (220 ± 2) nm. HRTEM determined the thickness of the oxide layer (360 nm) and revealed the presence of Si islands with a thickness of 30-40 nm and a length from 30 to 100 nm in the BOX layer nearby "BOX-Si substrate" interface. The Si islands are faceted by (1 1 1) and (0 0 1) faces. No defects were revealed in these islands. The signal from Si, which corresponds to the particles in an amorphous BOX matrix, was revealed by AES in the depth profiles. Amount of Si single crystal phase at the depth, where the particles are deposited, is about 10-20%.

Facile Synthesis of Thick Films of Poly(methyl methacrylate), Poly(styrene), and Poly(vinyl pyridine) from Au Surfaces

PubMed Central

Saha, Sampa

2011-01-01

Atom transfer radical polymerization (ATRP) is commonly used to grow polymer brushes from Au surfaces, but the resulting film thicknesses are usually significantly less than with ATRP from SiO2 substrates. On Au, growth of poly(methyl methacrylate) (PMMA) blocks from poly(tert-butyl acrylate) brushes occurs more rapidly than growth of PMMA from initiator monolayers, suggesting that the disparity between growth rates from Au and SiO2 stems from the Au surface. Radical quenching by electron transfer from Au is probably not the termination mechanism because polymerization from thin, cross-linked initiators gives film thicknesses that are essentially the same as the thicknesses of films grown from SiO2 under the same polymerization conditions. However, this result is consistent with termination through desorption of thiols from non-cross-linked films, and reaction of these thiols with growing polymer chains. The enhanced stability of cross-linked initiators allows ATRP at temperatures up to ~100 °C and enables the growth of thick films of PMMA (350 nm), polystyrene (120 nm) and poly(vinyl pyridine) (200 nm) from Au surfaces in 1 hour. At temperatures >100 °C, the polymer brush layers delaminate as large area films. PMID:21728374

Investigation of Chirality Selection Mechanism of Single Walled Carbon Nanotube

DTIC Science & Technology

2016-12-13

in SiO2 Glasses by Ion Implantation. Jpn. J. Appl. Phys. 1993;32(9R):3892. List of Publications and Significant Collaborations that resulted from...layers using TEM holders showed significant advancement. This involved investigation of the effects of sub- supporting SiO2 layer on the interaction...number density are formed on the Al2O3 layer deposited on the sub-supporting SiO2 layer than that deposited directly on the Si(100) wafer. Based on the

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

NASA Astrophysics Data System (ADS)

Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

2017-03-01

The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

Fabricating with crystalline Si to improve superconducting detector performance

NASA Astrophysics Data System (ADS)

Beyer, A. D.; Hollister, M. I.; Sayers, J.; Frez, C. F.; Day, P. K.; Golwala, S. R.

2017-05-01

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ∼ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

NASA Astrophysics Data System (ADS)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

NASA Astrophysics Data System (ADS)

Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

2018-06-01

We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Winata, Toto, E-mail: toto@fi.itb.ac.id

2016-04-19

Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which relatedmore » with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.« less

Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst.

PubMed

Dong, Yibo; Xie, Yiyang; Xu, Chen; Fu, Yafei; Fan, Xing; Li, Xuejian; Wang, Le; Xiong, Fangzhu; Guo, Weiling; Pan, Guanzhong; Wang, Qiuhua; Qian, Fengsong; Sun, Jie

2018-06-14

Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO 2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

NASA Astrophysics Data System (ADS)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Formation of Cr-modified silicide coatings on a Ti-Nb-Si based ultrahigh-temperature alloy by pack cementation process

NASA Astrophysics Data System (ADS)

Qiao, Yanqiang; Guo, Xiping

2010-10-01

Cr-modified silicide coatings were prepared on a Ti-Nb-Si based ultrahigh temperature alloy by Si-Cr co-deposition at 1250 °C, 1350 °C and 1400 °C for 5-20 h respectively. It was found that both coating structure and phase constituents changed significantly with increase in the co-deposition temperature and holding time. The outer layers in all coatings prepared at 1250 °C for 5-20 h consisted of (Ti,X) 5Si 3 (X represents Nb, Cr and Hf elements). (Ti,X) 5Si 4 was found as the only phase constituent in the intermediate layers in both coatings prepared at 1250 °C for 5 and 10 h, but the intermediate layers in the coatings prepared at 1250 °C for 15 and 20 h were mainly composed of (Ti,X) 5Si 3 phase that was derived from the decomposition of (Ti,X) 5Si 4 phase. In the coating prepared at 1350 °C for 5 h, single (Ti,X) 5Si 3 phase was found in its outmost layer, the same as that in the outer layers in the coatings prepared at 1250 °C; but in the coatings prepared at 1350 °C for 10-20 h, (Nb 1.95Cr 1.05)Cr 2Si 3 ternary phase was found in the outmost layers besides (Ti,X) 5Si 3 phase. In the coatings prepared at 1400 °C for 5-20 h, (Nb 1.95Cr 1.05)Cr 2Si 3 ternary phase was the single phase constituent in their outmost layers. The phase transformation (Ti,X) 5Si 4 → (Ti,X) 5Si 3 + Si occurred in the intermediate layers of the coatings prepared at 1350 and 1400 °C with prolonging co-deposition time, similar to the situation in the coatings prepared at 1250 °C for 15 and 20 h, but this transformation has been speeded up by increase in the co-deposition temperature. The transitional layers were mainly composed of (Ti,X) 5Si 3 phase in all coatings. The influence of co-deposition temperature on the diffusion ability of Cr atoms was greater than that of Si atoms in the Si-Cr co-deposition processes investigated. The growth of coatings obeyed inverse logarithmic laws at all three co-deposition temperatures. The Si-Cr co-deposition coating prepared at 1350 °C for 10 h showed a good oxidation resistance due to the formation of SiO 2 and Nb, Cr-doped TiO 2 scale after oxidation at 1250 °C for 10 h.

Epitaxial gallium arsenide wafers

NASA Technical Reports Server (NTRS)

Black, J. F.; Robinson, L. B.

1971-01-01

The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.

A delta-doped amorphous silicon thin-film transistor with high mobility and stability

NASA Astrophysics Data System (ADS)

Kim, Pyunghun; Lee, Kyung Min; Lee, Eui-Wan; Jo, Younjung; Kim, Do-Hyung; Kim, Hong-jae; Yang, Key Young; Son, Hyunji; Choi, Hyun Chul

2012-12-01

Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ˜0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD

NASA Astrophysics Data System (ADS)

Yazdanfar, M.; Stenberg, P.; Booker, I. D.; Ivanov, I. G.; Kordina, O.; Pedersen, H.; Janzén, E.

2013-10-01

The development of a chemical vapor deposition (CVD) process for very thick silicon carbide (SiC) epitaxial layers suitable for high power devices is demonstrated by epitaxial growth of 200 μm thick, low doped 4H-SiC layers with excellent morphology at growth rates exceeding 100 μm/h. The process development was done in a hot wall CVD reactor without rotation using both SiCl4 and SiH4+HCl precursor approaches to chloride based growth chemistry. A C/Si ratio <1 and an optimized in-situ etch are shown to be the key parameters to achieve 200 μm thick, low doped epitaxial layers with excellent morphology.

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

NASA Astrophysics Data System (ADS)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

In Situ Study of Silicon Electrode Lithiation with X-ray Reflectivity

DOE PAGES

Cao, Chuntian; Steinrück, Hans-Georg; Shyam, Badri; ...

2016-10-26

Surface sensitive X-ray reflectivity (XRR) measurements were performed to investigate the electrochemical lithiation of a native oxide terminated single crystalline silicon (100) electrode in real time during the first galvanostatic discharge cycle. This allows us to gain nanoscale, mechanistic insight into the lithiation of Si and the formation of the solid electrolyte interphase (SEI). We describe an electrochemistry cell specifically designed for in situ XRR studies and have determined the evolution of the electron density profile of the lithiated Si layer (Li xSi) and the SEI layer with subnanometer resolution. We propose a three-stage lithiation mechanism with a reaction limited,more » layer-by-layer lithiation of the Si at the Li xSi/Si interface.« less

SiN{sub x} layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Yunae; Kim, Eunah; Gwon, Minji

2015-10-12

We compared nanopatterned Si solar cells with and without SiN{sub x} layers. The SiN{sub x} layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN{sub x} layer played a crucial role in the improved carrier collection ofmore » the nanostructured solar cells.« less

Development of silicon nitride of improved toughness

NASA Technical Reports Server (NTRS)

Brennan, J. J.

1979-01-01

The application of reaction sintered Si2N4 energy absorbing surface layers to hot-pressed Si3N4 was investigated. The surface layer was formed by in-place nitridation of silicon powder. It was found that reaction sintered Si3N4 layers of 1 mm thickness, fabricated from either -100, +200, -200, or -325 mesh Si powder and nitrided in 96% N2/4% H2 so that approximately 20-25 vol % unnitrided Si remained in the layer, resulted in a sevenfold increase in ballistic impact resistance of a 0.64 cm thick hot-pressed SI3N4 substrate from RT 1370 C. Both NC-132 SI3N4, with MgO additive, and NCX-34 Si3N4, with Y2O3 additive, were evaluated as substrate material. The finer grain size -200 and -325 mesh nitrided Si layers were for their smoothness and relatively high density. It was found that nitriding in N2/H2 mixtures, rather than pure N2, resulted in a microstructure that did not substantially degrade the strength of the hot-pressed Si3N4 substrate. Thermal cycling tests on the RSSN/HPSN combinations from 200 C to 1370 C for 75 cycles in air did not degrade the impact resistance nor the interfacial bonding, although a large amount of internal silica formation occurred within the RSSN layer. Mach 0.8, 5 hr, hot gas erosion tests showed no surface recession of RSSN layers at 1200 C and slight surface recession at 1370 C.

Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction

NASA Astrophysics Data System (ADS)

Zeller, Patrick; Henß, Ann-Kathrin; Weinl, Michael; Diehl, Leo; Keefer, Daniel; Lippmann, Judith; Schulz, Anne; Kraus, Jürgen; Schreck, Matthias; Wintterlin, Joost

2016-11-01

Despite great previous efforts there is still a high need for a simple, clean, and upscalable method for detaching epitaxial graphene from the metal support on which it was grown. We present a method based on a pure gas phase reaction that is free of solvents and polymer supports and avoids mechanical transfer steps. The graphene was grown on 150 nm thick, single crystalline Ni(111) films on Si(111) wafers with YSZ buffer layers. Its quality was monitored by using low energy electron diffraction and scanning tunneling microscopy. The gas phase etching uses a chemical transport reaction, the so-called Mond process, based on the formation of gaseous nickel tetracarbonyl in 1 bar of CO at 75 °C and by adding small amounts of sulfide catalysts. X-ray photoelectron spectroscopy, Raman spectroscopy and scanning electron microscopy were used to characterize the detached graphene. It was found that the method successfully removes the nickel from underneath the graphene layer, so that the graphene lies on the insulating oxide buffer layer. Small residual particles of nickel sulfide and cracks in the obtained graphene layer were identified. The defect concentrations were comparable to graphene samples obtained by wet chemical etching and by the bubbling transfer.

A combined STM and SPA-LEED study of the “explosive” nucleation and collective diffusion in Pb/Si(111)

DOE PAGES

Hattab, H.; Hupalo, M.; Hershberger, M. T.; ...

2015-08-20

A novel type of very fast nucleation was recently found in Pb/Si(111) with 4- to 7-layer high islands becoming crystalline in an “explosive” way, when the Pb deposited amount in the wetting layer is compressed to θ c ~ 1.22 ML, well above the metallic Pb(111) density. This “explosive” nucleation is very different from classical nucleation when island growth is more gradual and islands grow in size by single adatom aggregation [8]. In order to identify the key parameters that control the nucleation we used scanning tunneling microscopy (STM) and spot profile analysis low energy electron diffraction (SPA-LEED). It wasmore » found that the number and duration of steps in iterative deposition used to approach θc and the flux rate have dramatic effects on the crystallization process. Larger depositions over shorter times induce greater spatial coverage fluctuations, so local areas can reach the critical coverage θ c easier. This can trigger the collective motion of the wetting layer from far away to build the Pb islands “explosively”. Here, the SPA-LEED experiments show that even low flux experiments in iterative deposition experiments can trigger transfer of material to the superstable 7-layer islands, as seen from the stronger satellite rings close to the (00) spot.« less

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

PubMed

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-02-25

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

PubMed Central

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-01-01

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value. PMID:28344296

Seed layer effect on different properties and UV detection capability of hydrothermally grown ZnO nanorods over SiO2/p-Si substrate

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Byrareddy, C. R.; Kumar, Pesala Sudheer; Yadav, Aniruddh Bahadur

2018-05-01

Hydrothermally grown one dimensional ZnO nanostructures are among the most widely used semiconductor materials to build high-efficiency electronic devices for various applications. Few researchers have addressed the growth mechanism and effect of ZnO seed layer on different properties of ZnO nanorods grown by hydrothermal method, instead, no one has synthesized ZnO nanorod over SiO2/p-Si substrate. The aim of this study is to study the effect of ZnO seed layer and the growth mechanism of ZnO nanorods over SiO2/p-Si substrate. To achieve the goal, we have synthesized ZnO nanorods over different thickness ZnO seed layers by using the hydrothermal method on SiO2/p-Si substrate. The effects of c-plane area ratio were identified for the growth rate of c-plane, reaction rate constant and stagnant layer thickness also calculated by using a modified rate growth equation. We have identified maximum seed layer thickness for the growth of vertical ZnO nanorod. A step dislocation in the ZnO nanorods grown on 150and 200 nm thick seed layers was observed, the magnitude of Burges vector was calculated for this disorder. The seed layer and ZnO nanorods were characterized by AFM, XPS, UV-visible, XRD (X-ray diffraction, and SEM(scanning electron microscope). To justify the application of the grown ZnO nanorods Ti/Au was deposited over ZnO nanorods grown over all seed layers for the fabrication of photoconductor type UV detector.

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

NASA Astrophysics Data System (ADS)

Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

2017-11-01

Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Propagation Characteristics of Finite Ground Coplanar Waveguide on Si Substrates With Porous Si and Polyimide Interface Layers

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Itotia, Isaac K.; Drayton, Rhonda Franklin

2003-01-01

Measured and modeled propagation characteristics of Finite Ground Coplanar (FGC) waveguide fabricated on a 15 ohm-cm Si substrate with a 23 micron thick, 68% porous Si layer and a 20 micron thick polyimide interface layer are presented for the first time. Attenuation and effective permittivity as function of the FGC geometry and the bias between the center conductor and the ground planes are presented. It is shown that the porous Si reduces the attenuation by 1 dB/cm compared to FGC lines with only polyimide interface layers, and the polyimide on porous silicon demonstrates negligible bias dependence.

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

NASA Technical Reports Server (NTRS)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

1989-01-01

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide/polycrystalline p-Si composite anode.

PubMed

Li, Y Z; Wang, Z L; Luo, H; Wang, Y Z; Xu, W J; Ran, G Z; Qin, G G; Zhao, W Q; Liu, H

2010-07-19

A phosphorescent organic light-emitting diode (PhOLED) with a nanometer-thick (approximately 10 nm) Ni silicide/ polycrystalline p-Si composite anode is reported. The structure of the PhOLED is Al mirror/ glass substrate / Si isolation layer / Ni silicide / polycrystalline p-Si/ V(2)O(5)/ NPB/ CBP: (ppy)(2)Ir(acac)/ Bphen/ Bphen: Cs(2)CO(3)/ Sm/ Au/ BCP. In the composite anode, the Ni-induced polycrystalline p-Si layer injects holes into the V(2)O(5)/ NPB, and the Ni silicide layer reduces the sheet resistance of the composite anode and thus the series resistance of the PhOLED. By adopting various measures for specially optimizing the thickness of the Ni layer, which induces Si crystallization and forms a Ni silicide layer of appropriate thickness, the highest external quantum efficiency and power conversion efficiency have been raised to 26% and 11%, respectively.

A chiral-based magnetic memory device without a permanent magnet

PubMed Central

Dor, Oren Ben; Yochelis, Shira; Mathew, Shinto P.; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices. PMID:23922081

A chiral-based magnetic memory device without a permanent magnet.

PubMed

Ben Dor, Oren; Yochelis, Shira; Mathew, Shinto P; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

PubMed

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

Near-field radiative transfer in spectrally tunable double-layer phonon-polaritonic metamaterials

NASA Astrophysics Data System (ADS)

Didari, Azadeh; Elçioğlu, Elif Begüm; Okutucu-Özyurt, Tuba; Mengüç, M. Pinar

2018-06-01

Understanding of near-field radiative transfer is crucial for many advanced applications such as nanoscale energy harvesting, nano-manufacturing, thermal imaging, and radiative cooling. Near-field radiative transfer has been shown to be dependent on the material and morphological characteristics of systems, the gap distances between structures, and their temperatures. Surface interactions of phononic materials in close proximity of each other has led to promising results for novel near-field radiative transfer applications. For systems involving thin films and small structures, as the dimension(s) through which the heat transfer takes place is/are on the order of sub-micrometers, it is important to identify the impacts of size-related parameters on the results. In this work, we investigated the impact of geometric design and characteristics in a double-layer metamaterial system made up of GaN, SiC, h-BN; all of which have potential importance in micro-and nano-technological systems. The numerical study is performed using the NF-RT-FDTD algorithm, which is a versatile method to study near-field thermal radiation performances of advanced configurations of materials, even with arbitrary shapes. We have systematically investigated the thin film thickness, the substrate material, and the nanostructured surfaces effects, and reported on the best combination of scenarios among the studied cases to obtain maximum enhancement of radiative heat transfer rate. The findings of this work may be used in design and fabrication of new corrugated surfaces for energy harvesting purposes.

Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leroy, F., E-mail: leroy@cinam.univ-mrs.fr; Passanante, T.; Cheynis, F.

2016-03-14

The thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(001) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO{sub 2}/Si interface that enhances the silicon oxide decomposition at the void periphery.

Highly Enhanced H2 Sensing Performance of Few-Layer MoS2/SiO2/Si Heterojunctions by Surface Decoration of Pd Nanoparticles.

PubMed

Hao, Lanzhong; Liu, Yunjie; Du, Yongjun; Chen, Zhaoyang; Han, Zhide; Xu, Zhijie; Zhu, Jun

2017-10-17

A novel few-layer MoS 2 /SiO 2 /Si heterojunction is fabricated via DC magnetron sputtering technique, and Pd nanoparticles are further synthesized on the device surface. The results demonstrate that the fabricated sensor exhibits highly enhanced responses to H 2 at room temperature due to the decoration of Pd nanoparticles. For example, the Pd-decorated MoS 2 /SiO 2 /Si heterojunction shows an excellent response of 9.2 × 10 3 % to H 2 , which is much higher than the values for the Pd/SiO 2 /Si and MoS 2 /SiO 2 /Si heterojunctions. In addition, the H 2 sensing properties of the fabricated heterojunction are dependent largely on the thickness of the Pd-nanoparticle layer and there is an optimized Pd thickness for the device to achieve the best sensing characteristics. Based on the microstructure characterization and electrical measurements, the sensing mechanisms of the Pd-decorated MoS 2 /SiO 2 /Si heterojunction are proposed. These results indicate that the Pd decoration of few-layer MoS 2 /SiO 2 /Si heterojunctions presents an effective strategy for the scalable fabrication of high-performance H 2 sensors.

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

NASA Astrophysics Data System (ADS)

Kodigala, Subba Ramaiah; Chattopadhyay, Somnath; Overton, Charles; Ardoin, Ira; Gordon, B. J.; Johnstone, D.; Roy, D.; Barone, D.

2015-03-01

The SiO2 layers have been grown onto C-face and Si-face 4H-SiC substrates by two different techniques such as wet thermal oxidize process and sputtering. The deposition recipes of these techniques are carefully optimized by trails and error method. The growth effects of SiO2 on the C-face and Si-face 4H-SiC substrates are thoroughly investigated by AFM analysis. The growth mechanism of different species involved in the growth process of SiO2 by wet thermal oxide is now proposed by adopting two body classical projectile scattering. This mechanism drives to determine growth of secondary phases such as α-CH nano-islands in the grown SiO2 layer. The effect of HF etchings on the SiO2 layers grown by both techniques and on both the C-face and Si-face substrates are legitimately studied. The thicknesses of the layers determined by AFM and ellipsometry techniques are widely promulgated. The MOS capacitors are made on the Si-face 4H-SiC wafers by wet oxidation and sputtering processes, which are studied by capacitance versus voltage (CV) technique. From CV measurements, the density of trap states with variation of trap level for MOS devices is estimated.

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

NASA Astrophysics Data System (ADS)

Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

2018-04-01

We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

Silicide formation process of Er films with Ta and TaN capping layers.

PubMed

Choi, Juyun; Choi, Seongheum; Kim, Jungwoo; Na, Sekwon; Lee, Hoo-Jeong; Lee, Seok-Hee; Kim, Hyoungsub

2013-12-11

The phase development and defect formation during the silicidation reaction of sputter-deposited Er films on Si with ∼20-nm-thick Ta and TaN capping layers were examined. TaN capping effectively prevented the oxygen incorporation from the annealing atmosphere, which resulted in complete conversion to the ErSi2-x phase. However, significant oxygen penetration through the Ta capping layer inhibited the ErSi2-x formation, and incurred the growth of several Er-Si-O phases, even consuming the ErSi2-x layer formed earlier. Both samples produced a number of small recessed defects at an early silicidation stage. However, large rectangular or square-shaped surface defects, which were either pitlike or pyramidal depending on the capping layer identity, were developed as the annealing temperature increased. The origin of different defect generation mechanisms was suggested based on the capping layer-dependent silicidation kinetics.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

PubMed

Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

2015-03-01

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094; Melnikov, A.

2015-03-15

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results weremore » studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.« less

Fabrication of photovoltaic laser energy converterby MBE

NASA Technical Reports Server (NTRS)

Lu, Hamilton; Wang, Scott; Chan, W. S.

1993-01-01

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

Quantitative analysis of hydrogen in SiO{sub 2}/SiN/SiO{sub 2} stacks using atom probe tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunimune, Yorinobu, E-mail: yorinobu.kunimune.vz@renesas.com; Shimada, Yasuhiro; Sakurai, Yusuke

2016-04-15

We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO{sub 2}/SiN/SiO{sub 2} (ONO) stack structure using ultraviolet laser-assisted atom probe tomography (APT). The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %). Thus, by subtracting the concentration of adsorbed hydrogen, the actualmore » hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA), which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale.« less

GaAs buffer layer technique for vertical nanowire growth on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaoqing, E-mail: steelxu@stanford.edu; Parizi, Kokab B.; Huo, Yijie

2014-02-24

Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surfacemore » leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.« less

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

NASA Technical Reports Server (NTRS)

Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

1993-01-01

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

PubMed

Li, Guanghui; Liu, Lin; Wu, Guan; Chen, Wei; Qin, Sujie; Wang, Yi; Zhang, Ting

2016-09-01

A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm -2 ), the device has a photoresponsivity of 1.52 A W -1 , with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10 4 when the power density reaches ≈2.5 mW cm -2 . The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Scalable 2D Mesoporous Silicon Nanosheets for High-Performance Lithium-Ion Battery Anode.

PubMed

Chen, Song; Chen, Zhuo; Xu, Xingyan; Cao, Chuanbao; Xia, Min; Luo, Yunjun

2018-03-01

Constructing unique mesoporous 2D Si nanostructures to shorten the lithium-ion diffusion pathway, facilitate interfacial charge transfer, and enlarge the electrode-electrolyte interface offers exciting opportunities in future high-performance lithium-ion batteries. However, simultaneous realization of 2D and mesoporous structures for Si material is quite difficult due to its non-van der Waals structure. Here, the coexistence of both mesoporous and 2D ultrathin nanosheets in the Si anodes and considerably high surface area (381.6 m 2 g -1 ) are successfully achieved by a scalable and cost-efficient method. After being encapsulated with the homogeneous carbon layer, the Si/C nanocomposite anodes achieve outstanding reversible capacity, high cycle stability, and excellent rate capability. In particular, the reversible capacity reaches 1072.2 mA h g -1 at 4 A g -1 even after 500 cycles. The obvious enhancements can be attributed to the synergistic effect between the unique 2D mesoporous nanostructure and carbon capsulation. Furthermore, full-cell evaluations indicate that the unique Si/C nanostructures have a great potential in the next-generation lithium-ion battery. These findings not only greatly improve the electrochemical performances of Si anode, but also shine some light on designing the unique nanomaterials for various energy devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structure of nanocrystalline calcium silicate hydrates: insights from X-ray diffraction, synchrotron X-ray absorption and nuclear magnetic resonance

PubMed Central

Grangeon, Sylvain; Claret, Francis; Roosz, Cédric; Sato, Tsutomu; Gaboreau, Stéphane; Linard, Yannick

2016-01-01

The structure of nanocrystalline calcium silicate hydrates (C–S–H) having Ca/Si ratios ranging between 0.57 ± 0.05 and 1.47 ± 0.04 was studied using an electron probe micro-analyser, powder X-ray diffraction, 29Si magic angle spinning NMR, and Fourier-transform infrared and synchrotron X-ray absorption spectroscopies. All samples can be described as nanocrystalline and defective tobermorite. At low Ca/Si ratio, the Si chains are defect free and the Si Q 3 and Q 2 environments account, respectively, for up to 40.2 ± 1.5% and 55.6 ± 3.0% of the total Si, with part of the Q 3 Si being attributable to remnants of the synthesis reactant. As the Ca/Si ratio increases up to 0.87 ± 0.02, the Si Q 3 environment decreases down to 0 and is preferentially replaced by the Q 2 environment, which reaches 87.9 ± 2.0%. At higher ratios, Q 2 decreases down to 32.0 ± 7.6% for Ca/Si = 1.38 ± 0.03 and is replaced by the Q 1 environment, which peaks at 68.1 ± 3.8%. The combination of X-ray diffraction and NMR allowed capturing the depolymerization of Si chains as well as a two-step variation in the layer-to-layer distance. This latter first increases from ∼11.3 Å (for samples having a Ca/Si ratio <∼0.6) up to 12.25 Å at Ca/Si = 0.87 ± 0.02, probably as a result of a weaker layer-to-layer connectivity, and then decreases down to 11 Å when the Ca/Si ratio reaches 1.38 ± 0.03. The decrease in layer-to-layer distance results from the incorporation of interlayer Ca that may form a Ca(OH)2-like structure, nanocrystalline and intermixed with C–S–H layers, at high Ca/Si ratios. PMID:27275135

An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear.

PubMed

Zhou, Zhi-Quan; Hu, Fei; Zhou, Wen-Jie; Chen, Hong-Yan; Ma, Lei; Zhang, Chi; Lu, Ming

2017-12-15

Crystalline-Si (c-Si) solar cell with black Si (b-Si) layer at the rear was studied in order to develop c-Si solar cell with sub-band gap photovoltaic response. The b-Si was made by chemical etching. The c-Si solar cell with b-Si at the rear was found to perform far better than that of similar structure but with no b-Si at the rear, with the efficiency being increased relatively by 27.7%. This finding was interesting as b-Si had a large specific surface area, which could cause high surface recombination and degradation of solar cell performance. A graded band gap was found to form at the rear of the c-Si solar cell with b-Si layer at the rear. This graded band gap tended to expel free electrons away from the rear, thus reducing the probability of electron-hole recombination at b-Si and improving the performance of c-Si solar cell.

Growth and characterization of low composition Ge, x in epi-Si1‑x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

NASA Astrophysics Data System (ADS)

Ajmal Khan, M.; Sato, R.; Sawano, K.; Sichanugrist, P.; Lukianov, A.; Ishikawa, Y.

2018-05-01

Semiconducting epi-Si1‑x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1‑x Ge x , makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1‑x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm‑2 to 15.46 mA cm‑2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.

Fabrication and Characterization of Silicon Carbide Epoxy Composites

NASA Astrophysics Data System (ADS)

Townsend, James

Nanoscale fillers can significantly enhance the performance of composites by increasing the extent of filler-to-matrix interaction. Thus far, the embedding of nanomaterials into composites has been achieved, but the directional arrangement has proved to be a challenging task. Even with advances in in-situ and shear stress induced orientation, these methods are both difficult to control and unreliable. Therefore, the fabrication of nanomaterials with an ability to orient along a magnetic field is a promising pathway to create highly controllable composite systems with precisely designed characteristics. To this end, the goal of this dissertation is to develop magnetically active nanoscale whiskers and study the effect of the whiskers orientation in a polymer matrix on the nanocomposite's behavior. Namely, we report the surface modification of silicon carbide whiskers (SiCWs) with magnetic nanoparticles and fabrication of SiC/epoxy composite materials. The magnetic nanoparticles attachment to the SiCWs was accomplished using polyelectrolyte polymer-to-polymer complexation. The "grafting to" and adsorption techniques were used to attach the polyelectrolytes to the surface of the SiCWs and magnetic nanoparticles. The anchored polyelectrolytes were polyacrylic acid (PAA) and poly(2-vinylpyridine) (P2VP). Next, the SiC/epoxy composites incorporating randomly oriented and magnetically oriented whiskers were fabricated. The formation of the composite was studied to determine the influence of the whiskers' surface composition on the epoxy curing reaction. After curing, the composites' thermal and thermo-mechanical properties were studied. These properties were related to the dispersion and orientation of the fillers in the composite samples. The obtained results indicated that the thermal and thermo-mechanical properties could be improved by orienting magnetically-active SiCWs inside the matrix. Silanization, "grafting to", adsorption, and complexation were used to modify the surface of SiCWs to further investigate the epoxy nanocomposite system. The process of composites formation was studied to evaluate the effects of the surface modification on the epoxy curing reaction. The obtained composites were tested and analyzed to assess their thermal and thermo-mechanical properties. These properties were related to the dispersion and surface chemical composition of the fillers in the nanocomposites. It was determined that magnetically modified SiCWs have lower ability for interfacial stress transfer in the composite systems under consideration. The final portion of this work was focused on reinforcing the magnetic layer of the SiCWs. This was accomplished by structurally toughening the magnetic layer with poly(glycidyl methacrylate) (PGMA) layer. As a result, the thermal and mechanical properties of the magnetic composite system were improved significantly.

Iridium Interfacial Stack - IrIS

NASA Technical Reports Server (NTRS)

Spry, David

2012-01-01

Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the SiC chip circuitry.

Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

PubMed

Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

2014-04-01

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

Controlling contamination in Mo/Si multilayer mirrors by Si surface capping modifications

NASA Astrophysics Data System (ADS)

Malinowski, Michael E.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.; Mrowka, Stanley; Soufli, Regina

2002-07-01

The performance of Mo/Si multilayer mirrors (MLMs) used to reflect UV (EUV) radiation in an EUV + hydrocarbon (NC) vapor environment can be improved by optimizing the silicon capping layer thickness on the MLM in order to minimize the initial buildup of carbon on MLMs. Carbon buildup is undesirable since it can absorb EUV radiation and reduce MLM reflectivity. A set of Mo/Si MLMs deposited on Si wafers was fabricated such that each MLM had a different Si capping layer thickness ranging form 2 nm to 7 nm. Samples from each MLM wafer were exposed to a combination of EUV light + (HC) vapors at the Advanced Light Source (ALS) synchrotron in order to determine if the Si capping layer thickness affected the carbon buildup on the MLMs. It was found that the capping layer thickness had a major influence on this 'carbonizing' tendency, with the 3 nm layer thickness providing the best initial resistance to carbonizing and accompanying EUV reflectivity loss in the MLM. The Si capping layer thickness deposited on a typical EUV optic is 4.3 nm. Measurements of the absolute reflectivities performed on the Calibration and Standards beamline at the ALS indicated the EUV reflectivity of the 3 nm-capped MLM was actually slightly higher than that of the normal, 4 nm Si-capped sample. These results show that he use of a 3 nm capping layer represents an improvement over the 4 nm layer since the 3 nm has both a higher absolute reflectivity and better initial resistance to carbon buildup. The results also support the general concept of minimizing the electric field intensity at the MLM surface to minimize photoelectron production and, correspondingly, carbon buildup in a EUV + HC vapor environment.

Luminescence properties of Ce{sup 3+} and Tb{sup 3+} co-doped SiO{sub x}N{sub y} thin films: Prospects for color tunability in silicon-based hosts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramírez, J. M., E-mail: joan-manel.ramirez@u-psud.fr; Ruiz-Caridad, A.; Estradé, S.

2016-03-21

In this work, the role of the nitrogen content, the annealing temperature, and the sample morphology on the luminescence properties of Ce{sup 3+} and Tb{sup 3+} co-doped SiO{sub x}N{sub y} thin films has been investigated. An increasing nitrogen atomic percentage has been incorporated in the host matrix by gradually replacing oxygen with nitrogen during fabrication while maintaining the Si content unaltered, obtaining a sequential variation in the film composition from nearly stoichiometric SiO{sub 2} to SiO{sub x}N{sub y}. The study of rare earth doped single layers has allowed us to identify the parameters that yield an optimum optical performance frommore » Ce{sup 3+} and Tb{sup 3+} ions. Ce{sup 3+} ions proved to be highly sensitive to the annealing temperature and the nitrogen content, showing strong PL emission for relatively low nitrogen contents (from 0 to 20%) and moderate annealing temperatures (800–1000 °C) or under high temperature annealing (1180 °C). Tb{sup 3+} ions, on the other hand, displayed a mild dependence on those film parameters. Rare earth co-doping has also been investigated by comparing the luminescence properties of three different approaches: (i) a Ce{sup 3+} and Tb{sup 3+} co-doped SiO{sub x}N{sub y} single layer, (ii) a bilayer composed of two SiO{sub x}N{sub y} single layers doped with either Ce{sup 3+} or Tb{sup 3+} ions, and (iii) a multilayer composed of a series of either Tb{sup 3+} or Ce{sup 3+}-doped SiO{sub x}N{sub y} thin films with interleaved SiO{sub 2} spacers. Bright green emission and efficient energy transfer from either Ce{sup 3+} ions or Ce silicates to Tb{sup 3+} ions has been observed in the co-doped single layer as a consequence of the strong ion-ion interaction. On the other hand, independent luminescence from Ce{sup 3+} and Tb{sup 3+} ions has been observed in the Ce{sup 3+} and Tb{sup 3+} co-doped bilayer and multilayer, providing a good scenario to develop light emitting devices with wide color tunability by varying the number of deposited films that contain each rare earth dopant. Moreover, the optoelectronic properties of Ce{sup 3+}- and/or Tb{sup 3+}-doped thin films have been studied by depositing transparent conductive electrodes over selected samples. An electroluminescence signal according to the rare earth transitions is obtained in all cases, validating the excitation of Ce{sup 3+} and Tb{sup 3+} ions upon electron injection. Also, the main charge transport of injected electrons has been evaluated and correlated with the layer stoichiometry. Finally, a simple reliability test has allowed disclosing the origin of the early breakdown of test devices, attributed to the excessive joule heating at filament currents that occur around a region close to the polarization point.« less

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

PubMed Central

2013-01-01

To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Cathodic Potential Dependence of Electrochemical Reduction of SiO2 Granules in Molten CaCl2

NASA Astrophysics Data System (ADS)

Yang, Xiao; Yasuda, Kouji; Nohira, Toshiyuki; Hagiwara, Rika; Homma, Takayuki

2016-09-01

As part of an ongoing fundamental study to develop a new process for producing solar-grade silicon, this paper examines the effects of cathodic potential on reduction kinetics, current efficiency, morphology, and purity of Si product during electrolysis of SiO2 granules in molten CaCl2 at 1123 K (850 °C). SiO2 granules were electrolyzed potentiostatically at different cathodic potentials (0.6, 0.8, 1.0, and 1.2 V vs Ca2+/Ca). The reduction kinetics was evaluated based on the growth of the reduced Si layer and the current behavior during electrolysis. The results suggest that a more negative cathodic potential is favorable for faster reduction. Current efficiencies in 60 minutes are greater than 65 pct at all the potentials examined. Si wires with sub-micron diameters are formed, and their morphologies show little dependence on the cathodic potential. The impurities in the Si product can be controlled at low level. The rate-determining step for the electrochemical reduction of SiO2 granules in molten CaCl2 changes with time. At the initial stage of electrolysis, the electron transfer is the rate-determining step. At the later stage, the diffusion of O2- ions is the rate-determining step. The major cause of the decrease in reduction rate with increasing electrolysis time is the potential drop from the current collector to the reaction front due to the increased contact resistance among the reduced Si particles.

Tunable Interfacial Thermal Conductance by Molecular Dynamics

NASA Astrophysics Data System (ADS)

Shen, Meng

We study the mechanism of tunable heat transfer through interfaces between solids using a combination of non-equilibrium molecular dynamics simulation (NEMD), vibrational mode analysis and wave packet simulation. We investigate how heat transfer through interfaces is affected by factors including pressure, interfacial modulus, contact area and interfacial layer thickness, with an overreaching goal of developing fundamental knowledge that will allow one to tailor thermal properties of interfacial materials. The role of pressure and interfacial stiffness is unraveled by our studies on an epitaxial interface between two Lennard-Jones (LJ) crystals. The interfacial stiffness is varied by two different methods: (i) indirectly by applying pressure which due to anharmonic nature of bonding, increases interfacial stiffness, and (ii) directly by changing the interfacial bonding strength by varying the depth of the potential well of the LJ potential. When the interfacial bonding strength is low, quantitatively similar behavior to pressure tuning is observed when the interfacial thermal conductance is increased by directly varying the potential-well depth parameter of the LJ potential. By contrast, when the interfacial bonding strength is high, thermal conductance is almost pressure independent, and even slightly decreases with increasing pressure. This decrease can be explained by the change in overlap between the vibrational densities of states of the two crystalline materials. The role of contact area is studied by modeling structures comprised of Van der Waals junctions between single-walled nanotubes (SWCNT). Interfacial thermal conductance between SWCNTs is obtained from NEMD simulation as a function of crossing angle. In this case the junction conductance per unit area is essentially a constant. By contrast, interfacial thermal conductance between multiwalled carbon nanotubes (MWCNTs) is shown to increase with diameter of the nanotubes by recent experimental studies [1]. To elucidate this behavior we studied a simplified model comprised of an interface between two stacks of graphene ribbons to mimic the contact between multiwalled nanotubes. Our results, in agreement with experiment, show that the interfacial thermal conductance indeed increases with the number of graphene layers, corresponding to larger diameter and larger number of walls in MWCNT. The role of interfacial layer thickness is investigated by modeling a system of a few layers of graphene sandwiched between two silicon slabs. We show, by wave packet simulation and by theoretical calculation of a spring-mass model, that the transmission coefficient of individual vibrational modes is strongly dependent on the frequency and the number of graphene layers due to coherent interference effects; by contrast, the interfacial thermal conductance obtained in NEMD simulation, which represents an integral over all phonons, is essentially independent of the number of graphene layers, in agreement with recent experiments. Furthermore, when we heat one atomic layer of graphene directly, the effective interfacial conductance associated with heat dissipation to the silicon substrate is very small. We attribute this to the resistance associated with heat transfer between high and low frequency phonon modes within graphene. Finally, we also replaced graphene layers by a few WSe2 sheets and observed that interfacial thermal resistance of a Si/n-WSe2/Si structure increases linearly with interface thickness at least for 1 < n <= 20, indicating diffusive heat transfer mechanism, in contrast to ballistic behavior of a few graphene layers. The corresponding thermal conductivity (0.048 W m-1 K-1) of a few WSe2 layers is rather small. By comparing phonon dispersion of graphene layers and WSe2 sheets, we attribute the diffusive behavior of a few WSe2 sheets to abundant optical phonons at low and medium frequencies leading to very short mean free path. Our computational studies of effects of pressure and structural properties on interfacial thermal conductance provide fundamental insights for tunable heat transfer in nanostructures. [1] Professor D. Y. Li from University of Vanderbilt, private communication (Nov. 14, 2011).

A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

NASA Astrophysics Data System (ADS)

Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

2017-12-01

Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

Sodium Iodate Produces a Strain-Dependent Retinal Oxidative Stress Response Measured In Vivo Using QUEST MRI.

PubMed

Berkowitz, Bruce A; Podolsky, Robert H; Lenning, Jacob; Khetarpal, Nikita; Tran, Catherine; Wu, Johnny Y; Berri, Ali M; Dernay, Kristin; Shafie-Khorassani, Fatema; Roberts, Robin

2017-06-01

We identify noninvasive biomarkers that measure the severity of oxidative stress within retina layers in sodium iodate (SI)-atrophy vulnerable (C57BL/6 [B6]) and SI-atrophy resistant (129S6/SvEvTac [S6]) mice. At 24 hours after administering systemic SI to B6 and S6 mice we measured: (1) superoxide production in whole retina ex vivo, (2) excessive free radical production in vivo based on layer-specific 1/T1 values before and after α-lipoic acid (ALA) administration while the animal was inside the magnet (QUEnch-assiSTed MRI [QUEST MRI]), and (3) visual performance (optokinetic tracking) ± antioxidants; control mice were similarly assessed. Retinal layer spacing and thickness in vivo also were evaluated (optical coherence tomography, MRI). SI-treated B6 mice retina had a significantly higher superoxide production than SI-treated S6 mice. ALA-injected SI-treated B6 mice had reduced 1/T1 in more retinal layers in vivo than in SI-treated S6 mice. Uninjected and saline-injected SI-treated B6 mice had similar transretinal 1/T1 profiles. Notably, the inner segment layer 1/T1 of SI-treated B6 mice was responsive to ALA but was unresponsive in SI-treated S6 mice. In both SI-treated strains, antioxidants improved contrast sensitivity to similar extents; antioxidants did not change acuity in either group. Retinal thicknesses were normal in both SI-treated strains at 24 hours after treatment. QUEST MRI uniquely measured severity of excessive free radical production within retinal layers of the same subject. Identifying the mechanisms underlying genetic vulnerabilities to oxidative stress is expected to help in understanding the pathogenesis of retinal degeneration.

Facile fabrication of nanofluidic diode membranes using anodic aluminium oxide

NASA Astrophysics Data System (ADS)

Wu, Songmei; Wildhaber, Fabien; Vazquez-Mena, Oscar; Bertsch, Arnaud; Brugger, Juergen; Renaud, Philippe

2012-08-01

Active control of ion transport plays important roles in chemical and biological analytical processes. Nanofluidic systems hold the promise for such control through electrostatic interaction between ions and channel surfaces. Most existing experiments rely on planar geometry where the nanochannels are generally very long and shallow with large aspect ratios. Based on this configuration the concepts of nanofluidic gating and rectification have been successfully demonstrated. However, device minimization and throughput scaling remain significant challenges. We report here an innovative and facile realization of hetero-structured Al2O3/SiO2 (Si) nanopore array membranes by using pattern transfer of self-organized nanopore structures of anodic aluminum oxide (AAO). Thanks to the opposite surface charge states of Al2O3 (positive) and SiO2 (negative), the membrane exhibits clear rectification of ion current in electrolyte solutions with very low aspect ratios compared to previous approaches. Our hetero-structured nanopore arrays provide a valuable platform for high throughput applications such as molecular separation, chemical processors and energy conversion.Active control of ion transport plays important roles in chemical and biological analytical processes. Nanofluidic systems hold the promise for such control through electrostatic interaction between ions and channel surfaces. Most existing experiments rely on planar geometry where the nanochannels are generally very long and shallow with large aspect ratios. Based on this configuration the concepts of nanofluidic gating and rectification have been successfully demonstrated. However, device minimization and throughput scaling remain significant challenges. We report here an innovative and facile realization of hetero-structured Al2O3/SiO2 (Si) nanopore array membranes by using pattern transfer of self-organized nanopore structures of anodic aluminum oxide (AAO). Thanks to the opposite surface charge states of Al2O3 (positive) and SiO2 (negative), the membrane exhibits clear rectification of ion current in electrolyte solutions with very low aspect ratios compared to previous approaches. Our hetero-structured nanopore arrays provide a valuable platform for high throughput applications such as molecular separation, chemical processors and energy conversion. Electronic supplementary information (ESI) available: Pattern transfer of local AAO mask into Si layers of different thickness; characterization of the Ag/AgCl electrodes and the cell constant; control experiments of mono-charged nanopore membranes; and simulation of ionic transport in nanofluidic diodes. See DOI: 10.1039/c2nr31243c

Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

NASA Technical Reports Server (NTRS)

Will, H. A.; Powell, J. A.

1974-01-01

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

Multi-layer coating of SiO2 nanoparticles to enhance light absorption by Si solar cells

NASA Astrophysics Data System (ADS)

Nam, Yoon-Ho; Um, Han-Don; Park, Kwang-Tae; Shin, Sun-Mi; Baek, Jong-Wook; Park, Min-Joon; Jung, Jin-Young; Zhou, Keya; Jee, Sang-Won; Guo, Zhongyi; Lee, Jung-Ho

2012-06-01

We found that multi-layer coating of a Si substrate with SiO2 dielectric nanoparticles (NPs) was an effective method to suppress light reflection by silicon solar cells. To suppress light reflection, two conditions are required for the coating: 1) The difference of refractive indexes between air and Si should be alleviated, and 2) the quarter-wavelength antireflection condition should be satisfied while avoiding intrinsic absorption loss. Light reflection was reduced due to destructive interference at certain wavelengths that depended on the layer thickness. For the same thickness dielectric layer, smaller NPs enhanced antireflectance more than larger NPs due to a decrease in scattering loss by the smaller NPs.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

PubMed

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.

Here, we demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneathmore » an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.« less

Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

NASA Astrophysics Data System (ADS)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

Flower-like ZnO nanorod arrays grown on HF-etched Si (111): constraining relation between ZnO seed layer and Si (111)

NASA Astrophysics Data System (ADS)

Brahma, Sanjaya; Liu, C.-W.; Huang, R.-J.; Chang, S.-J.; Lo, K.-Y.

2015-11-01

We demonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.

High-temperature crystallized thin-film PZT on thin polyimide substrates

NASA Astrophysics Data System (ADS)

Liu, Tianning; Wallace, Margeaux; Trolier-McKinstry, Susan; Jackson, Thomas N.

2017-10-01

Flexible piezoelectric thin films on polymeric substrates provide advantages in sensing, actuating, and energy harvesting applications. However, direct deposition of many inorganic piezoelectric materials such as Pb(Zrx,Ti1-x)O3 (PZT) on polymers is challenging due to the high temperature required for crystallization. This paper describes a transfer process for PZT thin films. The PZT films are first grown on a high-temperature capable substrate such as platinum-coated silicon. After crystallization, a polymeric layer is added, and the polymer-PZT combination is removed from the high-temperature substrate by etching away a release layer, with the polymer layer then becoming the substrate. The released PZT on polyimide exhibits enhanced dielectric response due to reduction in substrate clamping after removal from the rigid substrate. For Pb(Zr0.52,Ti0.48)0.98Nb0.02O3 films, release from Si increased the remanent polarization from 17.5 μC/cm2 to 26 μC/cm2. In addition, poling led to increased ferroelastic/ferroelectric realignment in the released films. At 1 kHz, the average permittivity was measured to be around 1160 after release from Si with a loss tangent below 3%. Rayleigh measurements further confirmed the correlation between diminished substrate constraint and increased domain wall mobility in the released PZT films on polymers.

Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bodeux, Romain; Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac; Michau, Dominique, E-mail: dominique.michau@icmcb.cnrs.fr

2016-09-15

Highlights: • Synthesis of Ba{sub 2}NdFeNb{sub 4}O{sub 15}/BaFe{sub 12}O{sub 19} (BaM) heterostructures by RF magnetron sputtering. • Growth of TTB layer were retained regardless of the underlayer (Pt bottom electrode or BaM). • Dielectric and magnetic properties were obtained from the Pt/TTB/BaM/Pt stacks. - Abstract: Ba{sub 2}NdFeNb{sub 4}O{sub 15} tetragonal tungsten bronze (TTB)/BaFe{sub 12}O{sub 19} (BaM) hexaferrite bilayers have been grown by RF magnetron sputtering on Pt/TiO{sub 2}/SiO{sub 2}/Si (PtS) substrates. The BaM layer is textured along (0 0 1) while the TTB layer is multioriented regardless of the PtS or BaM/PtS substrate. Dielectric properties of TTB films are similarmore » to those of bulk, i.e., ε ∼ 150 and a magnetic hysteresis loop is obtained from TTB/BaM bilayers, thanks to the BaM component. This demonstrates the possibility of transferring to 2 dimensional structures the composite multiferroic system TTB/BaM previously identified in 3 dimensional bulk ceramics.« less

Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and Ar environment

NASA Astrophysics Data System (ADS)

Minami, Kaichiro; Moriya, Atsushi; Yuasa, Kazuhiro; Maeda, Kiyohiko; Yamada, Masayuki; Kunii, Yasuo; Niwano, Michio; Murota, Junichi

2015-08-01

Introduction of Ge into ULSIs has become increasingly attractive because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in cleanroom air, the control of formation and reduction of the Ge oxide is requested for the introduction of Ge layers into Si process. Here, the reactions between gas phase Ge oxide and Si substrate and between the Ge oxide on Ge epitaxial layer and SiH4 are investigated. The native-oxidized Ge amount is obtained by calculating from chemically shifted peak intensity of Ge 3d measured by X-ray photoelectron spectroscopy. By the adsorption of the Ge oxide on Si(1 0 0) surface, pure Ge and Si oxide are formed on the Si surface even at 350 °C and the formed Ge amount tends to correspond to the oxidized Si amount, independently of the heat-treatment environment of H2 and Ar under the condition that Si oxide is not reduced by H2. By SiH4 treatment, the amount of the oxidized Ge on the Ge layer decreases drastically even at 350 °C and Si oxide is formed on the Ge layer. From these results, it is suggested that the Ge oxide is reduced even at 350 °C by Si or SiH4, and the Si oxide and the pure Ge are formed.

Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE

NASA Astrophysics Data System (ADS)

Riaz, Muhammad; Earles, S. K.; Kadhim, Ahmed; Azzahrani, Ahmad

The computer analysis of tandem solar cell, c-Si/a-Si:H/μc-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12eV, 1.50eV and 1.70eV, respectively. First, single junction solar cell with both a-Si and μc-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as FF = 78.98%, and η = 6.03%. For μc-SiGe absorbing layer, the efficiency and fill factor are increased as η = 7.06% and FF = 84.27%, respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/μc-SiGe, the fill factor FF = 81.91% and efficiency η = 9.84% have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/μc-SiGe and tandem solar cell c-Si/a-Si:H/μc-SiGe are improved with check board surface design for light trapping.

Positron annihilation on the surfaces of SiO 2 films thermally grown on single crystal of Cz-Si

NASA Astrophysics Data System (ADS)

Deng, Wen; Yue, Li; Zhang, Wei; Cheng, Xu-xin; Zhu, Yan-yan; Huang, Yu-yang

2009-09-01

Two-detector coincidence system and mono-energetic slow positron beam has been applied to measure the Doppler broadening spectra for single crystals of SiO2, SiO2 films with different thickness thermally grown on single crystal of Cz-Si, and single crystal of Si without oxide film. Oxygen is recognized as a peak at about 11.85 × 10-3m0c on the ratio curves. The S parameters decrease with the increase of positron implantation energy for the single crystal of SiO2 and Si without oxide film. However, for the thermally grown SiO2-Si sample, the S parameters in near surface of the sample increase with positron implantation energy. It is due to the formation of silicon oxide at the surface, which lead to lower S value. S and W parameters vary with positron implantation depth indicate that the SiO2-Si system consist of a surface layer, a SiO2 layer, a SiO2-Si interface layer and a semi-infinite Si substrate.

Bragg stack-functionalized counter electrode for solid-state dye-sensitized solar cells.

PubMed

Park, Jung Tae; Prosser, Jacob H; Kim, Dong Jun; Kim, Jong Hak; Lee, Daeyeon

2013-05-01

A highly reflective counter electrode is prepared through the deposition of alternating layers of organized mesoporous TiO(2) (om-TiO(2)) and colloidal SiO(2) (col-SiO(2)) nanoparticles. We present the effects of introducing this counter electrode into dye-sensitized solar cells (DSSCs) for maximizing light harvesting properties. The om-TiO(2) layers with a high refractive index are prepared by using an atomic transfer radical polymerization and a sol-gel process, in which a polyvinyl chloride-g-poly(oxyethylene) methacrylate graft copolymer is used as a structure-directing agent. The col-SiO(2) layers with a low refractive index are prepared by spin-coating commercially available silica nanoparticles. The properties of the Bragg stack (BS)-functionalized counter electrode in DSSCs are analyzed by using a variety of techniques, including spectroscopic ellipsometry, SEM, UV/Vis spectroscopy, incident photon-to-electron conversion efficiency, electrochemical impedance spectroscopy, and intensity modulated photocurrent/voltage spectroscopy measurements, to understand the critical factors contributing to the cell performance. When incorporated into DSSCs that are used in conjunction with a polymerized ionic liquid as the solid electrolyte, the energy conversion efficiency of this solid-state DSSC (ssDSSC) approaches 6.6 %, which is one of the highest of the reported N719 dye-based ssDSSCs. Detailed optical and electrochemical analyses of the device performance show that this assembly yields enhanced light harvesting without the negative effects of charge recombination or electrolyte penetration, which thus, presents new possibilities for effective light management. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Noble-metal intercalation process leading to a protected adatom in a graphene hollow site

NASA Astrophysics Data System (ADS)

Narayanan Nair, M.; Cranney, M.; Jiang, T.; Hajjar-Garreau, S.; Aubel, D.; Vonau, F.; Florentin, A.; Denys, E.; Bocquet, M.-L.; Simon, L.

2016-08-01

In previous studies, we have shown that gold deposited on a monolayer (ML) of graphene on SiC(0001) is intercalated below the ML after an annealing procedure and affects the band structure of graphene. Here we prove experimentally and theoretically that some of the gold forms a dispersed phase composed of single adatoms, being intercalated between the ML and the buffer layer and in a hollow position with respect to C atoms of the ML on top. They are freestanding and negatively charged, due to the partial screening of the electron transfer between SiC and the ML, without changing the intrinsic n-type doping of the ML. As these single atoms decouple the ML from the buffer layer, the quasiparticles of graphene are less perturbed, thus increasing their Fermi velocity. Moreover, the hollow position of the intercalated single Au atoms might lead to spin-orbit coupling in the graphene layer covering IC domains. This effect of spin-orbit coupling has been recently observed experimentally in Au-intercalated graphene on SiC(0001) [D. Marchenko, A. Varykhalov, J. Sánchez-Barriga, Th. Seyller, and O. Rader, Appl. Phys. Lett. 108, 172405 (2016), 10.1063/1.4947286] and has been theoretically predicted for heavy atoms, like thallium, in a hollow position on graphene [C. Weeks, J. Hu, J. Alicea, M. Franz, and R. Wu, Phys. Rev. X 1, 021001 (2011), 10.1103/PhysRevX.1.021001; A. Cresti, D. V. Tuan, D. Soriano, A. W. Cummings, and S. Roche, Phys. Rev. Lett. 113, 246603 (2014), 10.1103/PhysRevLett.113.246603].

Electrochemical Reduction Properties of Extended Space Charge InGaP and GaP Epitaxial Layers

DOE PAGES

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-06-17

Two lattice-matched epitaxial III-V phosphide films of thicknesses between 400 and 500 nm are grown by metal-organic chemical vapor deposition: InGaP on GaAs and GaP on Si. These structures are designed as photocathodes for solar-driven chemical reduction processes such as the hydrogen evolution reaction (HER) and CO 2 reduction into higher-order hydrocarbons. By using p + substrates and undoped epitaxial layers, an extended space-charge active region is achieved in the electrode with a design analogous to a p-i-n solar cell. When in contact with the methyl viologen MV + / + + redox couple, the InGaP/GaAs and GaP/Si cathodes generatemore » a photovoltage of 388 mV and 274 mV, respectively, under 1 sun illumination. Incident photon-to-current efficiency (IPCE) measurements confirm that the undoped active layers are exclusively performing light absorption and minority carrier diffusion-based charge transfer of high-energy photons. This shows that performance can be significantly boosted with lower-doped substrates. The InGaP/GaAs and GaP/Si electrodes are shown to drive the HER at saturation photocurrent densities of 9.05 mA/cm 2 and 2.34 mA/cm 2, respectively, under 1 sun illumination without a co-catalyst and under a large reduction bias. As a result, thicker films did not show a corresponding increased performance, and can be explained through understanding of crystalline defects and the electrostatics of the junctions.« less

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization

NASA Astrophysics Data System (ADS)

Hagmann, Joseph A.; Wang, Xiqiao; Namboodiri, Pradeep; Wyrick, Jonathan; Murray, Roy; Stewart, M. D.; Silver, Richard M.; Richter, Curt A.

2018-01-01

The key building blocks for the fabrication of devices based on the deterministic placement of dopants in silicon using scanning tunneling microscopy (STM) hydrogen lithography are the formation of well-defined dopant delta-layers and the overgrowth of high quality crystalline Si. To develop these capabilities, it is of critical importance to quantify dopant movement in the sub-nanometer regime. To this end, we investigate Si:P delta-layer samples produced by fully exposing a Si surface to PH3 prior to Si encapsulation with dramatically different levels of dopant confinement. We examine the effect of delta layer confinement on the weak localization signal in parallel and perpendicular magnetic fields and extract the delta-layer thickness from fits to the Hikami-Larkin-Nagaoka equation. We find good agreement with secondary ion mass spectroscopy measurements and demonstrate the applicability of this method in the sub-nanometer thickness regime. Our analysis serves as detailed instruction for the determination of the conducting layer thickness of a Si:P delta-layer by means of a high-throughput, nondestructive electrical transport measurement.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai

2016-06-15

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscopemore » (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.« less

Tribological Properties of TiO2/SiO2 Double Layer Coatings Deposited on CP-Ti

NASA Astrophysics Data System (ADS)

Çomakli, O.; Yazici, M.; Yetim, T.; Yetim, A. F.; Çelik, A.

In the present paper, the influences of different double layer on wear and scratch performances of commercially pure Titanium (CP-Ti) were investigated. TiO2/SiO2 and SiO2/TiO2 double layer coatings were deposited on CP-Ti by sol-gel dip coating process and calcined at 750∘C. The phase structure, cross-sectional morphology, composition, wear track morphologies, adhesion properties, hardness and roughness of uncoated and coated samples were characterized with X-ray diffraction, scanning electron microscopy (SEM), nano-indentation technique, scratch tester and 3D profilometer. Also, the tribological performances of all samples were investigated by a pin-on-disc tribo-tester against Al2O3 ball. Results showed that hardness, elastic modulus and adhesion resistance of double layer coated samples were higher than untreated CP-Ti. It was found that these properties of TiO2/SiO2 double layer coatings have higher than SiO2/TiO2 double layer coating. Additionally, the lowest friction coefficient and wear rates were obtained from TiO2/SiO2 double layer coatings. Therefore, it was seen that phase structure, hardness and film adhesion are important factors on the tribological properties of double layer coatings.

Composited reduced graphene oxide into LiFePO4/Li2SiO3 and its electrochemical impedance spectroscopy properties

NASA Astrophysics Data System (ADS)

Arifin, M.; Rus, Y. B.; Aimon, A. H.; Iskandar, F.; Winata, T.; Abdullah, M.; Khairurrijal, K.

2017-03-01

LiFePO4 is commonly used as cathode material for Li-ion batteries due to its stable operational voltage and high specific capacity. However, it suffers from certain disadvantages such as low intrinsic electronic conductivity and low ionic diffusion. This study was conducted to analyse the effect of reduced graphene oxide (rGO) on the electrochemical properties of LiFePO4/Li2SiO3 composite. This composite was synthesized by a hydrothermal method. Fourier transform infrared spectroscopy measurement identified the O-P-O, Fe-O, P-O, and O-Si-O- bands in the LiFePO4/Li2SiO3 composite. X-ray diffraction measurement confirmed the formation of LiFePO4. Meanwhile, Raman spectroscopy confirmed the number of rGO layers. Further, scanning electron microscopy images showed that rGO was distributed around the LiFePO4/Li2SiO3 particles. Finally, the electrochemical impedance spectroscopy results showed that the addition of 1 wt% of rGO to the LiFePO4/Li2SiO3 composite reduced charge transfer resistance. It may be concluded that the addition of 1 wt% rGO to LiFePO4/Li2SiO3 composite can enhance its electrochemical performance as a cathode material.

In-situ observation of equilibrium transitions in Ni films; agglomeration and impurity effects.

PubMed

Thron, Andrew M; Greene, Peter; Liu, Kai; van Benthem, Klaus

2014-02-01

Dewetting of ultra-thin Ni films deposited on SiO2 layers was observed, in cross-section, by in situ scanning transmission electron microscopy. Holes were observed to nucleate by voids which formed at the Ni/SiO2 interface rather than at triple junctions at the free surface of the Ni film. Ni islands were observed to retract, in attempt to reach equilibrium on the SiO2 layer. SiO2 layers with 120 nm thickness were found to limit in situ heating experiments due to poor thermal conductivity of SiO2. The formation of graphite was observed during the agglomeration of ultra-thin Ni films. Graphite was observed to wet both the free surface and the Ni/SiO2 interface of the Ni islands. Cr forms surface oxide layers on the free surface of the SiO2 layer and the Ni islands. Cr does not prevent the dewetting of Ni, however it will likely alter the equilibrium shape of the Ni islands. © 2013 Published by Elsevier B.V.

Orthogonally superimposed laser-induced periodic surface structures (LIPSS) upon nanosecond laser pulse irradiation of SiO2/Si layered systems

NASA Astrophysics Data System (ADS)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Kim, Hee-Cheol; Pfeifer, Erik; Kroll, Moritz; Müller, Sandra; Yang, Fang; Hampp, Norbert A.

2017-12-01

In this study we examined the formation of laser-induced periodic surface structures (LIPSS) on silicon (Si) in dependence on the thickness of silicon-dioxide (SiO2) on top. LIPSS were generated in air by linearly polarized ≈8 nanosecond laser pulses with a fluence per pulse of 2.41 J cm-2 at a repetition rate of 100 kHz. For SiO2 layers <80 nm, LIPSS oriented perpendicular to the laser polarization were obtained, but for SiO2 layers >120 nm parallel oriented LIPSS were observed. In both cases the periodicity was about 80-90% of the applied laser wavelength (λ0 = 532 nm). By variation of the SiO2 layer thickness in the range between 80 nm-120 nm, the dominating orientation changes. Even orthogonally superimposed LIPSS with a periodicity of only 60% of the laser wavelength were found. We show that the transition of the orientation direction of LIPSS is related to the penetration depth of surface plasmon polariton (SPP) fields into the oxide layer.

Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

PubMed

Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

2018-02-01

As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

Fundamentals of EUV resist-inorganic hardmask interactions

NASA Astrophysics Data System (ADS)

Goldfarb, Dario L.; Glodde, Martin; De Silva, Anuja; Sheshadri, Indira; Felix, Nelson M.; Lionti, Krystelle; Magbitang, Teddie

2017-03-01

High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardmasks (HMs) as etch transfer layers for EUV patterning. Ultrathin (<5nm) inorganic HMs can provide higher etch selectivity, lower post-etch LWR, decreased defectivity and wet strippability compared to spin-on hybrid HMs (e.g., SiARC), however such novel layers can induce resist adhesion failure and resist residue. Therefore, a fundamental understanding of EUV resist-inorganic HM interactions is needed in order to optimize the EUV resist interfacial behavior. In this paper, novel materials and processing techniques are introduced to characterize and improve the EUV resist-inorganic HM interface. HM surface interactions with specific EUV resist components are evaluated for open-source experimental resist formulations dissected into its individual additives using EUV contrast curves as an effective characterization method to determine post-development residue formation. Separately, an alternative adhesion promoter platform specifically tailored for a selected ultrathin inorganic HM based on amorphous silicon (aSi) is presented and the mitigation of resist delamination is exemplified for the cases of positive-tone and negative-tone development (PTD, NTD). Additionally, original wafer priming hardware for the deposition of such novel adhesion promoters is unveiled. The lessons learned in this work can be directly applied to the engineering of EUV resist materials and processes specifically designed to work on such novel HMs.

The source of dissolved silicon in soil surface solutions of a temperate forest ecosystem: Ge/Si and Si isotope ratios as biogeochemical tracers

NASA Astrophysics Data System (ADS)

Cornelis, J.; Delvaux, B.; Cardinal, D.; André, L.; Ranger, J.; Opfergelt, S.

2010-12-01

Understand the biogeochemical cycle of silicon (Si) in the Earth’s critical zone and the dissolved Si transfer from the litho-pedosphere into the hydrosphere is of great interest for the global balance of biogeochemical processes, including the global C cycle. Indeed, the interaction between Si and C cycles regulates the atmospheric CO2 through the chemical weathering of silicate minerals, the C sequestration in stable organo-mineral compounds and the Si nutrition of phytoplankton CO2-consumers in oceans. H4SiO4 released by mineral dissolution contributes to the critical zone evolution through neoformation of secondary minerals, adsorption onto hydroxyl-bearing phases and recycling by vegetation and return of phytoliths on topsoil. The neoformation of secondary precipitates (clay minerals and phytoliths polymerized in plants) and adsorption of Si onto Fe and Al (hydr)oxides are processes favoring the light Si isotope incorporation, generating rivers enriched in heavy Si isotopes. On the other hand, clay minerals and phytoliths display contrasting Ge/Si ratios since clay-sized weathering products are enriched in Ge and phytoliths are depleted in Ge. Thus stable Si isotope and Ge/Si ratios constitute very interesting proxies to trace transfer of Si in the critical zone. Here we report Si isotopic and Ge/Si ratios of the different Si pools in a temperate soil-tree system (Breuil experimental forest, France) involving various tree species grown on Alumnic Cambisol derived from granitic bedrock. Relative to granitic bedrock (δ30Si = -0.07 ‰; Ge/Si = 2.5 µmol/mol), clay-sized minerals are enriched in 28Si (-1.07 ‰) and Ge (6.2 µmol/mol) while phytoliths are enriched in 28Si (-0.28 to -0.64 ‰) and depleted in Ge (0.1 to 0.3 µmol/mol). This contrast allows us to infer the relative contribution of litho/pedogenic and biogenic mineral dissolution on the release of H4SiO4 in soil surface solutions. The Si-isotope signatures and Ge/Si ratios of forest floor solutions evolve towards lighter values (-1.38 and -2.05 ‰) and higher Ge/Si ratios (2.7 µmol/mol) relative to granite bedrock. This suggests a partial dissolution of 28Si and Ge-enriched secondary clays minerals incorporated by bioturbation in organic-rich horizons, with a fractionation releasing preferentially light Si isotopes. Without considering that organic acids promote dissolution of minerals, clay minerals detected in the organic layer (vermiculite, chlorite, illite and Ca-montmorillonite) are not stable and could have been partially dissolved and transformed in the chemical environment of forest floor. Sources of H4SiO4 in forest floor solutions are influenced by tree species which control the extent of clay-sized minerals mixed in organic horizons by bioturbation and, to a lesser extent, the Si recycling by forest vegetation.

The corrosion behavior of CVI SiC matrix in SiCf/SiC composites under molten fluoride salt environment

NASA Astrophysics Data System (ADS)

Wang, Hongda; Feng, Qian; Wang, Zhen; Zhou, Haijun; Kan, Yanmei; Hu, Jianbao; Dong, Shaoming

2017-04-01

High temperature corrosion behavior and microstructural evolution of designed chemical-vapor-infiltrated SiC matrix in SiC fiber reinforced SiC ceramic matrix composites in 46.5LiF-11.5NaF-42.0KF (mol. %) eutectic salt at 800 °C for various corrosion time was studied. Worse damage was observed as extending the exposure time, with the mass loss ratio increasing from 0.716 wt. % for 50 h to 5.914 wt. % for 500 h. The mass loss rate showed a trend of first decrease and then increase with the extended corrosion exposure. Compared with the near-stoichiometric SiC matrix layers, the O-contained boundaries between deposited matrix layers and the designed Si-rich SiC matrix layers were much less corrosion resistant and preferentially corroded. Liner relationship between the mass loss ratio and the corrosion time obtained from 50 h to 300 h indicated that the corrosion action was reaction-control process. Further corrosion would lead to matrix layer exfoliation and higher mass loss ratio.

Selective Area Growth of GaAs on Si Patterned Using Nanoimprint Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Makoutz, Emily A.; Horowitz, Kelsey A. W.

Heteroepitaxial selective area growth (SAG) of GaAs on patterned Si substrates is a potential low-cost approach to integrate III-V and Si materials for tandem or multijunction solar cells. The use of nanoscale openings in a dielectric material can minimize nucleation-related defects and allow thinner buffer layers to be used to accommodate lattice mismatch between Si and an epitaxial III-V layer. For photovoltaic applications, the cost of patterning and growth, as well as the impact on the performance of the Si bottom cell must be considered. We present preliminary results on the use of soft nanoimprint lithography (SNIL) to create patternedmore » nucleation templates for the heteroepitaxial SAG of GaAs on Si. We demonstrate that SNIL patterning of passivating layers on the Si substrate improves measured minority carrier properties relative to unprotected Si. Cost modeling of the SNIL process shows that adding a patterning step only adds a minor contribution to the overall cost of a tandem III-V/Si solar cell, and can enable significant savings if it enables thinner buffer layers.« less

Cathodoluminescence of SiOx under-stoichiometric silica layers

NASA Astrophysics Data System (ADS)

Salh, Roushdey; von Czarnowski, A.; Zamoryanskaya, M. V.; Kolesnikova, E. V.; Fitting, H.-J.

2006-06-01

Under-stoichiometric thin silica layers SiOx with different stoichiometric degree 1 x 2, were prepared by thermal evaporation of silicon monoxide in vacuum and in ambient oxygen atmosphere of various pressure onto crystalline silicon substrates. The chemical composition has been determined by Fourier transform infrared spectroscopy (FTIR). A special formula is derived to correlate the stoichiometric degree x with the wavenumber of the main TO stretching mode (Si-O-Si) in silica, finally to determine the actual composition values x of the layers. Cathodoluminescence (CL) of these layers shows the development of typical amorphous SiO2 luminescence bands at the composition threshold x > 1.5 and then onwards to x = 2. These luminescence bands were observed at 4.3, 2.7, 2.15, and 1.9 eV. The green-yellow luminescence (2.15 eV) is strongly increasing with the annealing temperature up to 1300 °C and is assigned to phase separation of SiOx into Si and SiO2 and formation of hexamer silicon rings in the understoichiometric silica network. Finally we observe Si nanoclusters by means of transmission elec- tron microscopy (TEM) micrographs.

Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer

NASA Astrophysics Data System (ADS)

Denda, Junya; Uryu, Kazuya; Watanabe, Masahiro

2013-04-01

A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current-voltage (I-V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

NASA Astrophysics Data System (ADS)

Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

2018-06-01

The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

One-dimensional dielectric bi-periodic photonic structures based on ternary photonic crystals

NASA Astrophysics Data System (ADS)

Dadoenkova, Nataliya N.; Dadoenkova, Yuliya S.; Panyaev, Ivan S.; Sannikov, Dmitry G.; Lyubchanskii, Igor L.

2018-01-01

We investigate the transmittivity spectra, fields, and energy distribution of the electromagnetic eigenwaves propagating in a one-dimensional (1D) dielectric photonic crystal [(TiO2/SiO2)NAl2O3]M with two periods formed by unit cells TiO2/SiO2 and (TiO2/SiO2)NAl2O3. Spectra of TE- and TM-modes depend on the geometric parameters of the structure and undergo modifications with the change in the period numbers, layer thicknesses, and incidence angle. Special attention is paid to the applicability of the hybrid effective medium approximation comprising the long-wave approximation and two-dimensional (2 × 2) transfer matrix method. We demonstrate spectral peculiarities of the bi-periodic structure and also show the differences between the band gap spectra of the bi-periodic and ternary 1D dielectric photonic crystals. The presented photonic crystal structure can find its applications in optoelectronics and nanophotonics areas as omnidirectional reflectors, optical ultra-narrow bandpass filters, and antireflection coatings.

Large-scale synthesis of NbS2 nanosheets with controlled orientation on graphene by ambient pressure CVD.

PubMed

Ge, Wanyin; Kawahara, Kenji; Tsuji, Masaharu; Ago, Hiroki

2013-07-07

We report ambient pressure chemical vapor deposition (CVD) growth of single-crystalline NbS2 nanosheets with controlled orientation. On Si and SiO2 substrates, NbS2 nanosheets grow almost perpendicular to the substrate surface. However, when we apply transferred CVD graphene on SiO2 as a substrate, NbS2 sheets grow laterally lying on the graphene. The NbS2 sheets show the triangular and hexagonal shapes with a thickness of about 20-200 nm and several micrometres in the lateral dimension. Analyses based on X-ray diffraction and Raman spectroscopy indicate that the NbS2 nanosheets are single crystalline 3R-type with a rhombohedral structure of R3m space group. Our findings on the formation of highly aligned NbS2 nanosheets on graphene give new insight into the formation mechanism of NbS2 and would contribute to the templated growth of various layered materials.

Electrolyte volume effects on electrochemical performance and solid electrolyte interphase in Si-graphite/NMC lithium-ion pouch cells

DOE PAGES

An, Seong Jin; Li, Jianlin; Daniel, Claus; ...

2017-05-15

This study aims to explore the correlations between electrolyte volume, electrochemical performance, and properties of the solid electrolyte interphase in pouch cells with Si-graphite composite anodes. The electrolyte is 1.2 M LiPF 6 in ethylene carbonate:ethylmethyl carbonate with 10 wt.% fluoroethylene carbonate. Single layer pouch cells (100 mAh) were constructed with 15 wt.% Si-graphite/LiNi 0.5Mn 0.3CO 0.2O 2 electrodes. It is found that a minimum electrolyte volume factor of 3.1 times the total pore volume of cell components (cathode, anode, and separator) is needed for better cycling stability. Less electrolyte causes increases in ohmic and charge transfer resistances. Lithium dendritesmore » are observed when the electrolyte volume factor is low. The resistances from the anodes become significant as the cells are discharged. As a result, solid electrolyte interphase thickness grows as the electrolyte volume factor increases and is non-uniform after cycling.« less

Structure assignment, electronic properties, and magnetism quenching of endohedrally doped neutral silicon clusters, Si(n)Co (n = 10-12).

PubMed

Li, Yejun; Tam, Nguyen Minh; Claes, Pieterjan; Woodham, Alex P; Lyon, Jonathan T; Ngan, Vu Thi; Nguyen, Minh Tho; Lievens, Peter; Fielicke, André; Janssens, Ewald

2014-09-18

The structures of neutral cobalt-doped silicon clusters have been assigned by a combined experimental and theoretical study. Size-selective infrared spectra of neutral Si(n)Co (n = 10-12) clusters are measured using a tunable IR-UV two-color ionization scheme. The experimental infrared spectra are compared with calculated spectra of low-energy structures predicted at the B3P86 level of theory. It is shown that the Si(n)Co (n = 10-12) clusters have endohedral caged structures, where the silicon frameworks prefer double-layered structures encapsulating the Co atom. Electronic structure analysis indicates that the clusters are stabilized by an ionic interaction between the Co dopant atom and the silicon cage due to the charge transfer from the silicon valence sp orbitals to the cobalt 3d orbitals. Strong hybridization between the Co dopant atom and the silicon host quenches the local magnetic moment on the encapsulated Co atom.

Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; George, T.; Pike, W. T.

1992-01-01

We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fallqvist, A.; Fager, H.; Hultman, L.

ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Å and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Å at a substrate temperature of 800 °C and 6 Å at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—onmore » ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ≤6 Å that coalesce into continuous layers for 8 and 15 Å thickness at 800 °C, and for 6 Å at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Å thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting of strings of 1–3 nm large SiN{sub x} precipitates along apparent column boundaries in the epitaxial ZrN.« less

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

NASA Technical Reports Server (NTRS)

Hecht, Michael H.

1990-01-01

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Three-dimensional imaging for precise structural control of Si quantum dot networks for all-Si solar cells

NASA Astrophysics Data System (ADS)

Kourkoutis, Lena F.; Hao, Xiaojing; Huang, Shujuan; Puthen-Veettil, Binesh; Conibeer, Gavin; Green, Martin A.; Perez-Wurfl, Ivan

2013-07-01

All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction.All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction. Electronic supplementary information (ESI) available: Electron tomography reconstruction movies. See DOI: 10.1039/c3nr01998e

Scanning electron microscopy of the surfaces of ion implanted SiC

NASA Astrophysics Data System (ADS)

Malherbe, Johan B.; van der Berg, N. G.; Kuhudzai, R. J.; Hlatshwayo, T. T.; Thabethe, T. T.; Odutemowo, O. S.; Theron, C. C.; Friedland, E.; Botha, A. J.; Wendler, E.

2015-07-01

This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360 keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350 °C), or above (i.e. 600 °C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900 °C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface.

Water Sorption in Electron-Beam Evaporated SiO2 on QCM Crystals and Its Influence on Polymer Thin Film Hydration Measurements.

PubMed

Kushner, Douglas I; Hickner, Michael A

2017-05-30

Spectroscopic ellipsometry (SE) and quartz crystal microbalance (QCM) measurements are two critical characterization techniques routinely employed for hydration studies of polymer thin films. Water uptake by thin polymer films is an important area of study to investigate antifouling surfaces, to probe the swelling of thin water-containing ionomer films, and to conduct fundamental studies of polymer brush hydration and swelling. SiO 2 -coated QCM crystals, employed as substrates in many of these hydration studies, show porosity in the thin electron-beam (e-beam) evaporated SiO 2 layer. The water sorption into this porous SiO 2 layer requires correction of the optical and mass characterization of the hydrated polymer due to changes in the SiO 2 layer as it sorbs water. This correction is especially important when experiments on SiO 2 -coated QCM crystals are compared to measurements on Si wafers with dense native SiO 2 layers. Water adsorption filling void space during hydration in ∼200-260 nm thick SiO 2 layers deposited on a QCM crystal resulted in increased refractive index of the layer during water uptake experiments. The increased refractive index led to artificially higher polymer swelling in the optical modeling of the hydration experiments. The SiO 2 -coated QCM crystals showed between 6 and 8% void as measured by QCM and SE, accounting for 60%-85% of the measured polymer swelling in the low humidity regime (<20% RH) and 25%-40% of the polymer swelling in the high humidity regime (>70% RH) from optical modeling for 105 and 47 nm thick sulfonated polymer films. Correcting the refractive index of the SiO 2 layer for its water content resulted in polymer swelling that successfully resembled swelling measured on a silicon wafer with nonporous native oxide.

Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration

NASA Astrophysics Data System (ADS)

Murota, Junichi; Le Thanh, Vinh

2015-03-01

One of the main requirements for ultra-large-scale integration (ULSI) is atomic-order control of process technology. Our concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of a few nm-thick Ge/about 4 nm-thick Si0.5Ge0.5/Si(100) by NH3, it is found that N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5/Si(100) substrate and form Si nitride, even at 500 °C. By subsequent H2 heat treatment, although N atomic amount in Ge layer is reduced drastically, the reduction of the Si nitride is slight. It is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride and that Ge/atomic-order N layer/Si1-xGex/Si (100) heterostructure is formed. These results demonstrate the capability of CVD technology for atomically controlled nitridation of group IV semiconductors for ultra-large-scale integration. Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam.

Distribution of Pd, Ag & U in the SiC Layer of an Irradiated TRISO Fuel Particle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas M. Lillo; Isabella J. van Rooyen

2014-08-01

The distribution of silver, uranium and palladium in the silicon carbide (SiC) layer of an irradiated TRISO fuel particle was studied using samples extracted from the SiC layer using focused ion beam (FIB) techniques. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy was used to identify the presence of the specific elements of interest at grain boundaries, triple junctions and precipitates in the interior of SiC grains. Details on sample fabrication, errors associated with measurements of elemental migration distances and the distances migrated by silver, palladium and uranium in the SiC layer of an irradiated TRISO particle frommore » the AGR-1 program are reported.« less

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Deposition and characterization of silicon thin-films by aluminum-induced crystallization

NASA Astrophysics Data System (ADS)

Ebil, Ozgenc

Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined to be 0.9 eV and depended on the nature of the interfacial oxide layer. Poly-Si layers prepared by AIC technique can be used as seed layers for epitaxial growth of bulk Si layer or as back contacts in c-Si based solar cells.

Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

PubMed

Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

2017-05-24

In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device. In addition, the strong inversion layer in the surface of the n-Si substrate is tentatively correlated to the a-SiO x (In) interface layer as well.

BACKWARD ANGLE STRUCTURE IN THE 20Ne+28Si QUASIELASTIC SCATTERING

NASA Astrophysics Data System (ADS)

Sgouros, O.; Soukeras, V.; Pakou, A.; Patronis, N.; Zerva, K.; Keeley, N.; Strojek, I.; Trzcińska, A.; Piasecki, E.; Rusek, K.; Stiliaris, E.; Mazzocco, M.

2013-10-01

New data for the quasielastic scattering of 20Ne from a 28Si target at incident energies of 42.5 MeV and 52.3 MeV and for the 28Si(20Ne, 24Mg)24Mg, 28Si(20Ne, 16O)32S and 28Si(20Ne, 12C)36Ar transfer reactions at 52.3 MeV are reported. Oscillations are observed in the backward angle quasielastic scattering data at 52.3 MeV and the 28Si(20Ne, 12C)36Ar transfer cross-sections are of the same magnitude as those for single-α stripping. Coupled reaction channels (CRC) calculations are unable to describe either the quasielastic or the 28Si(20Ne, 12C)36Ar transfer data assuming a sequential α transfer process with α-particle form factors from the literature. The addition of direct 8Be cluster transfer can provide a reasonable description of both data sets, but only with much larger spectroscopic factors than suggested by simple structure calculations or the large 8Be emission thresholds of 20Ne, 28Si and 36Ar, suggesting that the observed structure is of resonance-like origin. An optical model analysis of the quasielastic scattering data is also reported.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Atom probe tomography of a Ti-Si-Al-C-N coating grown on a cemented carbide substrate.

PubMed

Thuvander, M; Östberg, G; Ahlgren, M; Falk, L K L

2015-12-01

The elemental distribution within a Ti-Si-Al-C-N coating grown by physical vapour deposition on a Cr-doped WC-Co cemented carbide substrate has been investigated by atom probe tomography. Special attention was paid to the coating/substrate interface region. The results indicated a diffusion of substrate binder phase elements into the Ti-N adhesion layer. The composition of this layer, and the Ti-Al-N interlayer present between the adhesion layer and the main Ti-Si-Al-C-N layer, appeared to be sub-stoichiometric. The analysis of the interlayer showed the presence of internal surfaces, possibly grain boundaries, depleted in Al. The composition of the main Ti-Al-Si-C-N layer varied periodically in the growth direction; layers enriched in Ti appeared with a periodicity of around 30 nm. Laser pulsing resulted in a good mass resolution that made it possible to distinguish between N(+) and Si(2+) at 14 Da. Copyright © 2015 Elsevier B.V. All rights reserved.

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.

PubMed

Liu, Xinyu; Wang, Xinhua; Zhang, Yange; Wei, Ke; Zheng, Yingkui; Kang, Xuanwu; Jiang, Haojie; Li, Junfeng; Wang, Wenwu; Wu, Xuebang; Wang, Xianping; Huang, Sen

2018-06-12

Constant-capacitance deep-level transient Fourier spectroscopy is utilized to characterize the interface between a GaN epitaxial layer and a SiN x passivation layer grown by low-pressure chemical vapor deposition (LPCVD). A near-conduction band (NCB) state E LP ( E C - E T = 60 meV) featuring a very small capture cross section of 1.5 × 10 -20 cm -2 was detected at 70 K at the LPCVD-SiN x /GaN interface. A partially crystallized Si 2 N 2 O thin layer was detected at the interface by high-resolution transmission electron microscopy. Based on first-principles calculations of crystallized Si 2 N 2 O/GaN slabs, it was confirmed that the NCB state E LP mainly originates from the strong interactions between the dangling bonds of gallium and its vicinal atoms near the interface. The partially crystallized Si 2 N 2 O interfacial layer might also give rise to the very small capture cross section of the E LP owing to the smaller lattice mismatch between the Si 2 N 2 O and GaN epitaxial layer and a larger mean free path of the electron in the crystallized portion compared with an amorphous interfacial layer.

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers

NASA Astrophysics Data System (ADS)

Nguyen, Khai V.; Chaudhuri, Sandeep K.; Mandal, Krishna C.

2014-09-01

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 μm thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.

Chemical structure of interfaces

NASA Technical Reports Server (NTRS)

Grunthaner, F. J.

1985-01-01

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Phase transitions in orthopyroxene (En 90) to 49GPa from single-crystal X-ray diffraction

DOE PAGES

Finkelstein, Gregory J.; Dera, Przemyslaw K.; Duffy, Thomas S.

2014-10-29

Synchrotron-based high-pressure single-crystal X-ray diffraction experiments were conducted on ~Mg 0.9Fe 0.1SiO 3 (En 90) orthopyroxene crystals at room temperature to a maximum pressure of 48.5 GPa. The sample was compressed in a diamond anvil cell with a neon pressure medium and a gold pressure calibrant. In addition to the previously described orthopyroxene to β-opx transition (designated HPCEN2 in previous studies), we observe two further phase transitions at 29.9 GPa and 40.3 GPa. However, we do not observe the γ-opx phase recently described in an Fe-rich orthopyroxene composition. The structures of both of the new phases were solved in spacemore » group Pca21. While their Mg-O layers remain pyroxene-like, their Si-O layers transform in a stepwise fashion to akimotoite-like sheets, with sites in 4-, 5-, or 6-fold coordination, depending on the specific structure and layer. Due to the increased Si-O coordination number, we designate the new structures α- and β-post-orthopyroxene (α-popx and β-popx). α-popx has one Si-O layer that is entirely tetrahedral, and one layer that contains both tetrahedra and 5-coordinated Si in distorted square pyramids. β-popx retains the mixed 4- and 5-coordinated Si layer found in α-popx, while the other Si layer adopts fully octahedral coordination. The α- and β-popx structures show a progressive transformation towards the arrangement of Si layers found in akimotoite, a potentially important phase in the earth’s transition zone. Metastable transformations in pyroxenes are of interest for understanding possible metastability in geological environments such as subducting slabs and meteorite impacts« less

Phase transitions in orthopyroxene (En 90) to 49GPa from single-crystal X-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finkelstein, Gregory J.; Dera, Przemyslaw K.; Duffy, Thomas S.

Synchrotron-based high-pressure single-crystal X-ray diffraction experiments were conducted on ~Mg 0.9Fe 0.1SiO 3 (En 90) orthopyroxene crystals at room temperature to a maximum pressure of 48.5 GPa. The sample was compressed in a diamond anvil cell with a neon pressure medium and a gold pressure calibrant. In addition to the previously described orthopyroxene to β-opx transition (designated HPCEN2 in previous studies), we observe two further phase transitions at 29.9 GPa and 40.3 GPa. However, we do not observe the γ-opx phase recently described in an Fe-rich orthopyroxene composition. The structures of both of the new phases were solved in spacemore » group Pca21. While their Mg-O layers remain pyroxene-like, their Si-O layers transform in a stepwise fashion to akimotoite-like sheets, with sites in 4-, 5-, or 6-fold coordination, depending on the specific structure and layer. Due to the increased Si-O coordination number, we designate the new structures α- and β-post-orthopyroxene (α-popx and β-popx). α-popx has one Si-O layer that is entirely tetrahedral, and one layer that contains both tetrahedra and 5-coordinated Si in distorted square pyramids. β-popx retains the mixed 4- and 5-coordinated Si layer found in α-popx, while the other Si layer adopts fully octahedral coordination. The α- and β-popx structures show a progressive transformation towards the arrangement of Si layers found in akimotoite, a potentially important phase in the earth’s transition zone. Metastable transformations in pyroxenes are of interest for understanding possible metastability in geological environments such as subducting slabs and meteorite impacts« less

An ab initio investigation of Bi2Se3 topological insulator deposited on amorphous SiO2.

PubMed

de Oliveira, I S S; Scopel, W L; Miwa, R H

2017-02-01

We use first-principles simulations to investigate the topological properties of Bi 2 Se 3 thin films deposited on amorphous SiO 2 , Bi 2 Se 3 /a-SiO 2 , which is a promising substrate for topological insulator (TI) based device applications. The Bi 2 Se 3 films are bonded to a-SiO 2 mediated by van der Waals interactions. Upon interaction with the substrate, the Bi 2 Se 3 topological surface and interface states remain present, however the degeneracy between the Dirac-like cones is broken. The energy separation between the two Dirac-like cones increases with the number of Bi 2 Se 3 quintuple layers (QLs) deposited on the substrate. Such a degeneracy breaking is caused by (i) charge transfer from the TI to the substrate and charge redistribution along the Bi 2 Se 3 QLs, and (ii) by deformation of the QL in contact with the a-SiO 2 substrate. We also investigate the role played by oxygen vacancies ([Formula: see text]) on the a-SiO 2 , which increases the energy splitting between the two Dirac-like cones. Finally, by mapping the electronic structure of Bi 2 Se 3 /a-SiO 2 , we found that the a-SiO 2 surface states, even upon the presence of [Formula: see text], play a minor role on gating the electronic transport properties of Bi 2 Se 3 .

Investigation of the magnetic properties of Si-gradient steel sheet by comparison with 6.5%Si steel sheet

NASA Astrophysics Data System (ADS)

Hiratani, T.; Zaizen, Y.; Oda, Y.; Yoshizaki, S.; Senda, K.

2018-05-01

In this study, we investigated the magnetic properties of Si-gradient steel sheet produced by CVD (chemical vapor deposition) siliconizing process, comparing with 6.5% Si steel sheet. The Si-gradient steel sheet having silicon concentration gradient in the thickness direction, has larger hysteresis loss and smaller eddy current loss than the 6.5% Si steel sheet. In such a loss configuration, the iron loss of the Si-gradient steel sheet becomes lower than that of the 6.5% Si steel sheet at high frequencies. The experiment suggests that tensile stress is formed at the surface layer and compressive stress is formed at the inner layer in the Si gradient steel sheet. The magnetic anisotropy is induced by the internal stress and it is considered to affect the magnetization behavior of the Si-gradient steel sheet. The small eddy current loss of Si-gradient steel sheet can be explained as an effect of magnetic flux concentration on the surface layer.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

A long-term ultrahigh temperature application of layered silicide coated Nb alloy in air

NASA Astrophysics Data System (ADS)

Sun, Jia; Fu, Qian-Gang; Li, Tao; Wang, Chen; Huo, Cai-Xia; Zhou, Hong; Yang, Guan-Jun; Sun, Le

2018-05-01

Nb-based alloy possessed limited application service life at ultrahigh temperature (>1400 °C) in air even taking the effective protective coating strategy into consideration for last decades. In this work a long duration of above 128 h at 1500 °C in air was successfully achieved on Nb-based alloy thanked to multi-layered silicide coating. Through optimizing interfaces, the MoSi2/NbSi2 silicide coating with Al2O3-adsorbed-particles layer exhibited three-times higher of oxidation resistance capacity than the one without it. In MoSi2-Al2O3-NbSi2 multilayer coating, the Al2O3-adsorbed-particles layer playing as an element-diffusion barrier role, as well as the formed porous Nb5Si3 layer as a stress transition zone, contributed to the significant improvement.

Kapitza resistance of Si/SiO2 interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowen Deng; Aleksandr Chenatynskiy; Marat Khafizov

2014-02-01

A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

Carbon Displacement-Induced Single Carbon Atomic Chain Formation and its Effects on Sliding of SiC Fibers in SiC/graphene/SiC Composite

DOE PAGES

Wallace, Joseph B.; Chen, Di; Shao, Lin

2015-11-03

Understanding radiation effects on the mechanical properties of SiC composites is important to their application in advanced reactor designs. By means of molecular dynamics simulations, we found that due to strong interface bonding between the graphene layers and SiC, the sliding friction of SiC fibers is largely determined by the frictional behavior between graphene layers. Upon sliding, carbon displacements between graphene layers can act as seed atoms to induce the formation of single carbon atomic chains (SCACs) by pulling carbon atoms from the neighboring graphene planes. The formation, growth, and breaking of SCACs determine the frictional response to irradiation.

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

NASA Technical Reports Server (NTRS)

Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

1993-01-01

An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

Epitaxial ferromagnetic single clusters and smooth continuous layers on large area MgO/CVD graphene substrates

NASA Astrophysics Data System (ADS)

Godel, Florian; Meny, Christian; Doudin, Bernard; Majjad, Hicham; Dayen, Jean-François; Halley, David

2018-02-01

We report on the fabrication of ferromagnetic thin layers separated by a MgO dielectric barrier from a graphene-covered substrate. The growth of ferromagnetic metal layers—Co or Ni0.8Fe0.2—is achieved by Molecular Beam Epitaxy (MBE) on a 3 nm MgO(111) epitaxial layer deposited on graphene. In the case of a graphene, grown by chemical vapor deposition (CVD) over Ni substrates, an annealing at 450 °C, under ultra-high-vacuum (UHV) conditions, leads to the dewetting of the ferromagnetic layers, forming well-defined flat facetted clusters whose shape reflects the substrate symmetry. In the case of CVD graphene transferred on SiO2, no dewetting is observed after same annealing. We attribute this difference to the mechanical stress states induced by the substrate, illustrating how it matters for epitaxial construction through graphene. Controlling the growth parameters of such magnetic single objects or networks could benefit to new architectures for catalysis or spintronic applications.

Effect of SiO2 coating layer morphology on TiH2 gas release characteristic.

PubMed

Yang, Zhimao; Fang, Jixiang; Ding, Bingjun

2005-10-15

In this study, a uniform and compact SiO2 film-coating layer was prepared on the surface of TiH2 particles by sol-gel method using inexpensive raw materials. The preparation process of SiO2-coated TiH2 particles and the effect of the coating layer morphology on the gas release characteristic were investigated in detail. When the pH value of TiH2 suspending solution is about 4.0 and the concentration of silicic acid is more than 0.5 mol/L, the coating layer shows a SiO2 particle-coating morphology. While a homogeneous and dense film-coating layer can be obtained when the solution pH value and concentration of silicic acid are about 4.0 and 0.5 mol/L. The results of gas release at 700 degrees C show that TiH2 particles coated with silicon dioxide layers can efficiently delay the starting time of gas release of TiH2 powders to 60-100 s. Comparing the particle-coating layer, the SiO2 film-coating layer has a better delaying effect on gas release of TiH2 particles.

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

NASA Astrophysics Data System (ADS)

Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

2018-01-01

Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

NASA Technical Reports Server (NTRS)

Hoenk, Michael

2011-01-01

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

Surfactant-Mediated Growth of Ge/Si(001) Interface Studied by XPD

NASA Astrophysics Data System (ADS)

Gunnella, R.; Castrucci, P.; Pinto, N.; Cucculelli, P.; Davoli, I.; Sébilleau, D.; de Crescenzi, M.

The influence of Sb as a surfactant on the formation of Si/Ge interface is studied by means of XPD (X-ray photoelectron diffraction) and AED (Auger electron diffraction) from Ge and Si core levels. The technique employed is particularly suitable for checking the film tetragonal distortion, the growth morphology and the sharpness of the interface. We found a layer by layer growth mode for 3 ML of Ge on Si(001) and related values of strain of the film close to the value predicted by the elastic theory which enforces the use of such a surfactant to obtain high quality and sharp heterostructures. In addition, studying the influence of 3 ML of the Si cap layer on the 3 ML Ge, we obtain no indication of Ge segregation into the Si cap layer. Finally, evidences of quality degradation after high temperature (T > 600°C) annealing are shown.

Atomic layer deposition and post-growth thermal annealing of ultrathin MoO3 layers on silicon substrates: Formation of surface nanostructures

NASA Astrophysics Data System (ADS)

Liu, Hongfei; Yang, Ren Bin; Yang, Weifeng; Jin, Yunjiang; Lee, Coryl J. J.

2018-05-01

Ultrathin MoO3 layers have been grown on Si substrates at 120 °C by atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo(CO)6] and ozone (O3) as the Mo- and O-source precursors, respectively. The ultrathin films were further annealed in air at Tann = 550-750 °C for 15 min. Scanning-electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been employed to evaluate the morphological and elemental properties as well as their evolutions upon annealing of the thin films. They revealed an interfacial SiOx layer in between the MoO3 layer and the Si substrate; this SiOx layer converted into SiO2 during the annealing; and the equivalent thickness of the MoO3 (SiO2) layer decreased (increased) with the increase in Tann. Particles with diameters smaller than 50 nm emerged at Tann = 550 °C and their sizes (density) were reduced (increased) by increasing Tann to 650 °C. A further increase of Tann to 750 °C resulted in telephone-cord-like MoO3 structures, initiated from isolated particles on the surface. These observations have been discussed and interpreted based on temperature-dependent atomic interdiffusions, surface evaporations, and/or melting of MoO3, which shed new light on ALD MoO3 towards its electronic applications.

Development of Self-Healing Zirconium-Silicide Coatings for Improved Performance Zirconium-Alloy Fuel Cladding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sridharan, Kumar; Mariani, Robert; Bai, Xianming

Zirconium-alloy fuel claddings have been used successfully in Light Water Reactors (LWR) for over four decades. However, under high temperature accident conditions, zirconium-alloys fuel claddings exhibit profuse exothermic oxidation accompanied by release of hydrogen gas due to the reaction with water/steam. Additionally, the ZrO 2 layer can undergo monoclinic to tetragonal to cubic phase transformations at high temperatures which can induce stresses and cracking. These events were unfortunately borne out in the Fukushima-Daiichi accident in in Japan in 2011. In reaction to such accident, protective oxidation-resistant coatings for zirconium-alloy fuel claddings has been extensively investigated to enhance safety margins inmore » accidents as well as fuel performance under normal operation conditions. Such surface modification could also beneficially affect fuel rod heat transfer characteristics. Zirconium-silicide, a candidate coating material, is particularly attractive because zirconium-silicide coating is expected to bond strongly to zirconium-alloy substrate. Intermetallic compound phases of zirconium-silicide have high melting points and oxidation of zirconium silicide produces highly corrosion resistant glassy zircon (ZrSiO 4) and silica (SiO 2) which possessing self-healing qualities. Given the long-term goal of developing such coatings for use with nuclear reactor fuel cladding, this work describes results of oxidation and corrosion behavior of bulk zirconium-silicide and fabrication of zirconium-silicide coatings on zirconium-alloy test flats, tube configurations, and SiC test flats. In addition, boiling heat transfer of these modified surfaces (including ZrSi 2 coating) during clad quenching experiments is discussed in detail.« less

Growth and characterization of PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers on Si (100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachar, H.K.; Chao, I.; Fang, X.M.

1998-12-31

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si(100) using a MBE-grown PbSe/BaF{sub 2}/CaF{sub 2} buffer layer structure. Pb{sub 1{minus}x}Sn{sub x}Se layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si(100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electronmore » microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb{sub 1{minus}x}Sn{sub x}Se layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF{sub 2} buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.« less

Behavior of W-SiC/SiC dual layer tiles under LHD plasma exposure

NASA Astrophysics Data System (ADS)

Mohrez, Waleed A.; Kishimoto, Hirotatsu; Kohno, Yutaka; Hirotaki, S.; Kohyama, Akira

2013-11-01

Towards the early realization of fusion power reactors, high performance first wall and plasma facing components (PFCs) are essentially required. As one of the biggest challenges for this, high heat flux component (HHFC) design and R & D has been emphasized. This report provides the high performance HHFC materials R & D status and the first plasma exposure test result from large helical device (LHD). W-SiC/SiC dual layer tiles (hereafter, W-SiC/SiC) were developed by applied NITE process. This is the realistic concept of tungsten armor with ceramic composite substrates for fusion power reactors. The dual layer tiles were fabricated and tested their survival under the LHD divertor plasma exposure (Nominally 10 MW/m2 maximum heat load for 6 s operation cycle). The microstructure evolution, including crack and pore formation, was analyzed, besides the behavior of bonding layer between tungsten and SiC/SiC was evaluated by C-scanning images of ultrasonic method and Electron probe Micro-analyzer (EPMA). Thermal analysis was conducted by finite element method, where ANSYS code release 13.0 was used.

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

PubMed

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

2017-10-01

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

NASA Technical Reports Server (NTRS)

Yao, H.; Woollam, J. A.; Wang, P. J.; Tejwani, M. J.; Alterovitz, S. A.

1993-01-01

Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

Tailoring the nickel nanoparticles anchored on the surface of Fe3O4@SiO2 spheres for nanocatalysis.

PubMed

Ding, Lei; Zhang, Min; Zhang, Yanwei; Yang, Jinbo; Zheng, Jing; Hayat, Tasawar; Alharbi, Njud S; Xu, Jingli

2017-08-25

Herein, we report an efficient and universal strategy for synthesizing a unique triple-shell structured Fe 3 O 4 @SiO 2 @C-Ni hybrid composite. Firstly, the Fe 3 O 4 cores were synthesized by hydrothermal reaction, and sequentially coated with SiO 2 and a thin layer of nickel-ion-doped resin-formaldehyde (RF-Ni 2+ ) using an extended Stöber method. This was followed by carbonization to produce the Fe 3 O 4 @SiO 2 @C-Ni nanocomposites with metallic nickel nanoparticles embedded in an RF-derived thin graphic carbon layer. Interestingly, the thin SiO 2 spacer layer between RF-Ni 2+ and Fe 3 O 4 plays a critical role on adjusting the size and density of the nickel nanoparticles on the surface of Fe 3 O 4 @SiO 2 nanospheres. The detailed tailoring mechanism is explicitly discussed, and it is shown that the iron oxide core can react with the nickel nanoparticles without the SiO 2 spacer layer, and the size and density of the nickel nanoparticles can be effectively controlled when the SiO 2 layer exits. The multifunctional composites exhibit a significantly enhanced catalytic performance in the reduction of 4-nitrophenol (4-NP).

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Coleman, P. G.; Nash, D.; Edwardson, C. J.; Knights, A. P.; Gwilliam, R. M.

2011-07-01

Variable-energy positron annihilation spectroscopy (VEPAS) has been applied to the study of the formation and evolution of vacancy-type defect structures in silicon (Si) and the 1.5 μm thick Si top layer of silicon-on-insulator (SOI) samples. The samples were implanted with 2 MeV Si ions at fluences between 1013 and 1015 cm-2, and probed in the as-implanted state and after annealing for 30 min at temperatures between 350 and 800 °C. In the case of SOI the ions were implanted such that their profile was predominantly in the insulating buried oxide layer, and thus their ability to combine with vacancies in the top Si layer, and that of other interstitials beyond the buried oxide, was effectively negated. No measurable differences in the positron response to the evolution of small clusters of n vacancies (Vn, n ˜ 3) in the top Si layer of the Si and SOI samples were observed after annealing up to 500 °C; at higher temperatures, however, this response persisted in the SOI samples as that in Si decreased toward zero. At 700 and 800 °C the damage in Si was below detectable levels, but the VEPAS response in the top Si layer in the SOI was consistent with the development of nanovoids.

SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

PubMed

Mastari, M; Charles, M; Bogumilowicz, Y; Thai, Q M; Pimenta-Barros, P; Argoud, M; Papon, A M; Gergaud, P; Landru, D; Kim, Y; Hartmann, J M

2018-07-06

In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C-700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

NASA Astrophysics Data System (ADS)

Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

2018-05-01

In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

NASA Astrophysics Data System (ADS)

Li, Jeng-Ting; Tsai, Ho-Lin; Lai, Wei-Yao; Hwang, Weng-Sing; Chen, In-Gann; Chen, Jen-Sue

2018-04-01

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

Ultrafast Thermal Plasma Preparation of Solid Si Films with Potential Application in Photovoltaic Cells: A Parametric Study

NASA Astrophysics Data System (ADS)

Mostajeran Goortani, Behnam; Gitzhofer, François; Bouyer, Etienne; Mousavi, Mehdi

2009-03-01

An innovative method, namely ultrafast plasma surface melting, is developed to fabricate solid films of silicon with very high rates (150 cm2/min). The method is composed of preparing a suspension of solid particles in a volatile solvent and spreading it on a refractory substrate such as Mo. After solvent evaporation, the resulting porous layer is exposed to the flame tale of inductively coupled RF plasma to sinter and melt the surface particles and to prepare a solid film of silicon. It is shown that by controlling the flow dynamics and heat transfer around the substrate, and managing the kinetic parameters (i.e., exposure time, substrate transport speed, and reaction kinetics) in the reactor, we can produce solid crystalline Si films with the potential applications in photovoltaic cells industry. The results indicate that the optimum formation conditions with a film thickness of 250-700 μm is when the exposure time in the plasma is in the range of 5-12.5 s for a 100 × 50 mm large layer. By combining the Fourier’s law of conduction with the experimental measurements, we obtained an effective heat diffusivity and developed a model to obtain heat diffusion in the porous layer exposed to the plasma. The model further predicts the minimum and maximum exposure time for the substrate in the plasma flame as a function of material properties, the porous layer thickness and of the imposed heat flux.

Microstructure and properties of FeSiCr/PA6 composites by injection molding using FeSiCr powders by phosphating and coupling treatment

NASA Astrophysics Data System (ADS)

Wang, Lulu; Qiao, Liang; Zheng, Jingwu; Cai, Wei; Ying, Yao; Li, Wangchang; Che, Shenglei; Yu, Jing

2018-04-01

FeSiCr/PA6 composites were prepared by injection molding using the FeSiCr powders modified by different phosphating agents and KH550 coupling agent. The resistivity, impact strength, magnetic permeability and magnetic loss of the FeSiCr/PA6 composites were measured. The morphologies of different FeSiCr powders and the FeSiCr/PA6 composites were also observed by scanning electron microscope (SEM). The results showed that 1-Hydroxyethylidene-1,1-diphosphonic acid, phytic acid and H3PO4 could improve the electrical resistivity of FeSiCr powders by forming the dense phosphating layer except diphenylphosphinic acid. However, the resistivity of FeSiCr/PA6 composites using the FeSiCr powders treated by all the four phosphating agents had no obvious increase though the phosphating layer on the surface of FeSiCr powder came into being. The nylon insulation layer had much stronger influence than the phosphating layer on electrical resistivity of the composites. After adding appropriate KH550 coupling agent, the impact strengths of FeSiCr/PA6 composites were significantly improved, which may be associated with the tiny gap between FeSiCr powder and PA6 matrix. The effects of the phosphating agents on the magnetic permeability and loss of the FeSiCr/PA6 were small and the mechanism were also discussed.

Growth and properties of silicon heterostructures with buried nanosize Mg2Si clusters

NASA Astrophysics Data System (ADS)

Galkin, N. G.; Galkin, K. N.

2005-06-01

The technology of solid-phase growth of nanosize islands of magnesium suicide on Si (111) 7x7 with narrow distributions of lateral size and height (60 - 80 and 5 - 7 nanometers, respectively) and density of up to 2x 109 sm-2 is proposed. A 20-50 nm thick Si layer has been grown upon these islands. Basing on the data of AES, EELS, AFM and JR spectroscopy, a conclusion is made that the Mg2Si islands remain in depth of the Si layer. The suggestion is made that sizes, density and crystal structure of the buried magnesium suicide clusters preserves. It is shown, that the system of three as-grown layers of buried clusters has smoother surface than the one layer system. The contribution of the Mg2Si clusters into the dielectric function is observed at the energy 0.8-1.2 eV, it is maximal if the clusters are localized on the silicon surface. It is shown, that with increase of the number of Mg2Si cluster layers their contribution increases into the effective number of electrons per a unit cell and effective dielectric function of the sample.

Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

NASA Astrophysics Data System (ADS)

Romanyuk, O.; Supplie, O.; Susi, T.; May, M. M.; Hannappel, T.

2016-10-01

The atomic and electronic band structures of GaP/Si(001) heterointerfaces were investigated by ab initio density functional theory calculations. Relative total energies of abrupt interfaces and mixed interfaces with Si substitutional sites within a few GaP layers were derived. It was found that Si diffusion into GaP layers above the first interface layer is energetically unfavorable. An interface with Si/Ga substitution sites in the first layer above the Si substrate is energetically the most stable one in thermodynamic equilibrium. The electronic band structure of the epitaxial GaP/Si(001) heterostructure terminated by the (2 ×2 ) surface reconstruction consists of surface and interface electronic states in the common band gap of two semiconductors. The dispersion of the states is anisotropic and differs for the abrupt Si-Ga, Si-P, and mixed interfaces. Ga 2 p , P 2 p , and Si 2 p core-level binding-energy shifts were computed for the abrupt and the lowest-energy heterointerface structures. Negative and positive core-level shifts due to heterovalent bonds at the interface are predicted for the abrupt Si-Ga and Si-P interfaces, respectively. The distinct features in the heterointerface electronic structure and in the core-level shifts open new perspectives in the experimental characterization of buried polar-on-nonpolar semiconductor heterointerfaces.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

NASA Astrophysics Data System (ADS)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

A surface-mediated siRNA delivery system developed with chitosan/hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly

NASA Astrophysics Data System (ADS)

Wu, Lijuan; Wu, Changlin; Liu, Guangwan; Liao, Nannan; Zhao, Fang; Yang, Xuxia; Qu, Hongyuan; Peng, Bo; Chen, Li; Yang, Guang

2016-12-01

siRNA delivery remains highly challenging because of its hydrophilic and anionic nature and its sensitivity to nuclease degradation. Effective siRNA loading and improved transfection efficiency into cells represents a key problem. In our study, we prepared Chitosan/Hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly, in which siRNAs can be effectively loaded and protected. The construction process was characterized by FTIR, 13C NMR (CP/MAS), UV-vis spectroscopy, and atomic force microscopy (AFM). We presented the controlled-release performance of the films during incubation in 1 M NaCl solution for several days through UV-vis spectroscopy and polyacrylamide gel electrophoresis (PAGE). Additionally, we verified the stability and integrity of the siRNA loaded on multilayer films. Finally, the biological efficacy of the siRNA delivery system was evaluated via cells adhesion and gene silencing analyses in eGFP-HEK 293T cells. This new type of surface-mediated non-viral multilayer films may have considerable potential in the localized and controlled-release delivery of siRNA in mucosal tissues, and tissue engineering application.

Criteria for improved open-circuit voltage in a-Si :H(N)/c-Si(P) front heterojunction with intrinsic thin layer solar cells

NASA Astrophysics Data System (ADS)

Nath, Madhumita; Chatterjee, P.; Damon-Lacoste, J.; Roca i Cabarrocas, P.

2008-02-01

Hydrog enated amorphous/crystalline silicon "heterojunction with intrinsic thin layer (HIT)" solar cells have gained popularity after it was demonstrated by Sanyo that they can achieve stable conversion efficiencies, as high as crystalline silicon (c-Si) cells, but where the cost may be reduced with the help of amorphous silicon (a-Si:H) low temperature deposition technology. In this article, we study N-a-Si :H/P-c-Si front HIT structures, where light enters through the N-a-Si :H layer. The aim is to examine ways of improving the open-circuit voltage, using computer modeling in conjunction with experiments. We also assess under which conditions such improvements in Voc actually occur. Modeling indicates that for a density of states Nss⩾1013cm-2 on the surface of the P-c-Si wafer facing the emitter layer, Voc is entirely limited by this parameter and is lower than 0.5V. We also learn that it is possible to increase the Voc to ˜0.73V by reducing this defect density to ˜1010cm-2, by reducing the surface recombination speed of the electrons at the back P-c-Si/aluminum contact (SnL), and by improving the lifetime of the carriers (τ ) in the P-c-Si wafer to ˜5ms. Modeling further indicates that when τ ⩽0.1ms, the sensitivity of Voc to SnL vanishes, as very few back-diffusing electrons can reach the back contact. Improvements in Voc by decreasing both the defect density on the surface of the P-c-Si wafer facing the emitter layer and SnL have been achieved in practice by (a) improved passivation thanks to a thin intrinsic polymorphous silicon layer deposited on the c-Si wafer (instead of a-Si :H) and (b) using localized aluminum and back surface field layers to attain a lower SnL. Experimentally, a Voc of 0.675V has already been attained. Simulations indicate that the lifetime of carriers inside the P-c-Si wafer of these cells is ˜366μs and needs to be improved to achieve a higher Voc.

Graded Index Silicon Geranium on Lattice Matched Silicon Geranium Semiconductor Alloy

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R., Jr. (Inventor); Stoakley, Diane M. (Inventor)

2009-01-01

A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si(1-x), ,Ge(x) is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277

SAW propagation characteristics of TeO3/3C-SiC/LiNbO3 layered structure

NASA Astrophysics Data System (ADS)

Soni, Namrata D.

2018-04-01

Surface acoustic wave (SAW) devices based on Lithium Niobate (LiNbO3) single crystal are advantageous because of its high SAW phase velocity, electromechanical coupling coefficient and cost effectiveness. In the present work a new multi-layered TeO3/3C-SiC/128° Y-X LiNbO3 SAW device has been proposed. SAW propagation properties such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of the TeO3/SiC/128° Y-X LiNbO3 multi layered structure is examined using theoretical calculations. It is found that the integration of 0.09λ thick 3C-SiC over layer on 128° Y-X LiNbO3 increases its electromechanical coupling coefficient from 5.3% to 9.77% and SAW velocity from 3800 ms‑1 to 4394 ms‑1. The SiC/128° Y-X LiNbO3 bilayer SAW structure exhibits a high positive TCD value. A temperature stable layered SAW device could be obtained with introduction of 0.007λ TeO3 over layer on SiC/128° Y-X LiNbO3 bilayer structure without sacrificing the efficiency of the device. The proposed TeO3/3C-SiC/128° Y-X LiNbO3 multi-layered SAW structure is found to be cost effective, efficient, temperature stable and suitable for high frequency application in harsh environment.

Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

NASA Astrophysics Data System (ADS)

Ahamad Mohiddon, Md.; Lakshun Naidu, K.; Ghanashyam Krishna, M.; Dalba, G.; Ahmed, S. I.; Rocca, F.

2014-01-01

The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine structure (XAFS) spectroscopy. The oxidized interface was created, in situ, prior to the deposition of a 400 nm tick a-Si layer over a 50 nm tick Cr layer. The entire stack of substrate/metallic Cr/Cr2O3/a-Si was then annealed at temperatures from 300 up to 700 °C. Analysis of the near edge and extended regions of each XAFS spectrum shows that only a small fraction of Cr is able to diffuse through the oxide layer up to 500 °C, while the remaining fraction is buried under the oxide layer in the form of metallic Cr. At higher temperatures, diffusion through the oxide layer is enhanced and the diffused metallic Cr reacts with a-Si to form CrSi2. At 700 °C, the film contains Cr2O3 and CrSi2 without evidence of unreacted metallic Cr. The activation energy and diffusion coefficient of Cr are quantitatively determined in the two temperature regions, one where the oxide acts as diffusion barrier and another where it is transparent to Cr diffusion. It is thus demonstrated that chromium oxide can be used as a diffusion barrier to prevent metal diffusion into a-Si.

Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima; Tripathi, Shweta; Chakrabarti, P.

2016-03-01

In this paper, structural, electrical and ultraviolet photodetection parameters of RF sputtered-ZnO/Si heterojunction diodes are analyzed. In this work, ZnO thin film was deposited on bare Si substrate as well as Si substrate coated with ultrathin ZnO seed layer to exhibit the effect of seed layer on device performance. AFM image of as-grown ZnO films have exhibited the uniform growth ZnO film over the whole Si substrate with average roughness of 3.2 nm and 2.83 nm for ZnO with and without seed layer respectively. Stronger peak intensity along (002) direction, as shown in XRD spectra confirm that ZnO film grown on ZnO seed layer is having more stable wurtzite structure. Ti/Al point contacts were deposited on top of the ZnO film and a layer of Al was deposited on bottom of Si substrate for using as ohmic contacts for further device characterization at dark and under UV light of 365 nm wavelength. This process is repeated for both the films sequentially. The photo-responsivity of our proposed devices is calculated as 0.34 A/W for seed layer-mediated devices and 0.26 A/W for devices without seed layer. These values are very high as compare to the reported value of photo-responsivity for same kind of ZnO/Si heterojunction device prototypes prepared by other techniques.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

PubMed

Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

2014-05-28

The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

Synthesis and Raman spectroscopy of a layered SiS2 phase at high pressures

NASA Astrophysics Data System (ADS)

Wang, Yu; Jiang, Shu-Qing; Goncharov, Alexander F.; Gorelli, Federico A.; Chen, Xiao-Jia; Plašienka, Dušan; MartoÅák, Roman; Tosatti, Erio; Santoro, Mario

2018-01-01

Dichalcogenides are known to exhibit layered solid phases, at ambient and high pressures, where 2D layers of chemically bonded formula units are held together by van der Waals forces. These materials are of great interest for solid-state sciences and technology, along with other 2D systems such as graphene and phosphorene. SiS2 is an archetypal model system of the most fundamental interest within this ensemble. Recently, high pressure (GPa) phases with Si in octahedral coordination by S have been theoretically predicted and also experimentally found to occur in this compound. At variance with stishovite in SiO2, which is a 3D network of SiO6 octahedra, the phases with octahedral coordination in SiS2 are 2D layered. Very importantly, this type of semiconducting material was theoretically predicted to exhibit continuous bandgap closing with pressure to a poor metallic state at tens of GPa. We synthesized layered SiS2 with octahedral coordination in a diamond anvil cell at 7.5-9 GPa, by laser heating together elemental S and Si at 1300-1700 K. Indeed, Raman spectroscopy up to 64.4 GPa is compatible with continuous bandgap closing in this material with the onset of either weak metallicity or of a narrow bandgap semiconductor state with a large density of defect-induced, intra-gap energy levels, at about 57 GPa. Importantly, our investigation adds up to the fundamental knowledge of layered dichalcogenides.

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

NASA Astrophysics Data System (ADS)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Study of p-type and intrinsic materials for amorphous silicon based solar cells

NASA Astrophysics Data System (ADS)

Du, Wenhui

This dissertation summarizes the research work on the investigation and optimization of high efficiency hydrogenated amorphous silicon (a-Si:H) based thin film n-i-p single-junction and multi-junction solar cells, deposited using radio frequency (RF) and very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) techniques. The fabrication and characterization of high quality p-type and intrinsic materials for a-Si:H based solar cells have been systematically and intensively studied. Hydrogen dilution, substrate temperature, gas flow rate, RF- or VHF-power density, and films deposition time have been optimized to obtain "on-the-edge" materials. To understand the material structure of the silicon p-layer providing a high Voc a-Si:H solar cell, hydrogenated amorphous, protocrystalline, and nanocrystalline silicon p-layers have been prepared using RF-PECVD and characterized by Raman spectroscopy and high resolution transmission electronic microscopy (HRTEM). It was found that the optimum Si:H p-layer for n-i-p a-Si:H solar cells is composed of fine-grained nanocrystals with crystallite sizes in the range of 3-5 nm embedded in an amorphous network. Using the optimized p-layer, an a-Si:H single-junction solar cell with a very high Voc value of 1.042 V and a FF value of 0.74 has been obtained. a-Si:H, a-SiGe:H and nc-Si:H i-layers have been prepared using RF- and VHF-PECVD techniques and monitored by different optical and electrical characterizations. Single-junction a-Si:H, a-SiGe and nc-Si:H cells have been developed and optimized. Intermediate bandgap a-SiGe:H solar cells achieved efficiencies over 12.5%. On the basis of optimized component cells, we achieved a-Si:Hla-SiGe:H tandem solar cells with efficiencies of ˜12.9% and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cells with efficiencies of ˜12.03%. VHF-PECVD technique was used to increase the deposition rates of the narrow bandgap materials. The deposition rate for a-SiGe:H i-layer attained 9 A/sec and the solar cell had a V oc of 0.588 V, Jsc of 20.4 mA/cm2, FF of 0.63, and efficiency of 7.6%. Preliminary research on the preparation of a-Si:Hlnc-Si:H tandem solar cells and a-Si:Hla-SiGe:Hlnc-Si:H triple-junction cells has also been undertaken using VHF nc-Si:H bottom cells with deposition rates of 6 A/sec. All I-V measurements were carried out under AM1.5G (100 MW/cm2) and the cell area was 0.25 cm2.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Menglu; Tu, K. N., E-mail: kntu@ucla.edu; Kim, Dong Wook

Thermal-crosstalk induced thermomigration failure in un-powered microbumps has been found in 2.5D integrated circuit (IC) circuit. In 2.5D IC, a Si interposer was used between a polymer substrate and a device chip which has transistors. The interposer has no transistors. If transistors are added to the interposer chip, it becomes 3D IC. In our test structure, there are two Si chips placed horizontally on a Si interposer. The vertical connections between the interposer and the Si chips are through microbumps. We powered one daisy chain of the microbumps under one Si chip; however, the un-powered microbumps in the neighboring chipmore » are failed with big holes in the solder layer. We find that Joule heating from the powered microbumps is transferred horizontally to the bottom of the neighboring un-powered microbumps, and creates a large temperature gradient, in the order of 1000 °C/cm, through the un-powered microbumps in the neighboring chip, so the latter failed by thermomigration. In addition, we used synchrotron radiation tomography to compare three sets of microbumps in the test structure: microbumps under electromigration, microbumps under thermomigration, and microbumps under a constant temperature thermal annealing. The results show that the microbumps under thermomigration have the largest damage. Furthermore, simulation of temperature distribution in the test structure supports the finding of thermomigration.« less

Corrosion Studies in Support of Medium Power Lead Alloy Cooled Reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eric Loewen; Ronald Ballinger; Jeongyoun Lim

2004-09-01

The performance of structural materials in lead or lead-bismuth eutectic (LBE) systems is evaluated. The materials evaluated included refractory metals (W, Mo, and Ta), several U.S. steels [austenitic steel (316L), carbon steels (F-22, Fe-Si), ferritic/martensitic steels (HT-9 and 410)], and several experimental Fe-Si-Cr alloys that were expected to demonstrate corrosion resistance. The materials were exposed in either an LBE rotating electrode or a dynamic corrosion cell for periods from 100 to 1000 h at temperatures of 400, 500, 600, and 700°C, depending on material and exposure location. Weight change and optical scanning electron microscopy or X-ray analysis of the specimenmore » were used to characterize oxide film thickness, corrosion depth, microstructure, and composition changes. The results of corrosion tests validate the excellent resistance of refractory metals (W, Ta, and Mo) to LBE corrosion. The tests conducted with stainless steels (410, 316L, and HT-9) produced mass transfer of elements (e.g., Ni and Cr) into the LBE, resulting in degradation of the material. With Fe-Si alloys a Si-rich layer (as SiO2) is formed on the surface during exposure to LBE from the selective dissolution of Fe.« less

Corrosion Studies in Support of Medium-Power Lead-Alloy-Cooled Reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loewen, Eric P.; Ballinger, Ronald G.; Lim, Jeongyoun

2004-09-15

The performance of structural materials in lead or lead-bismuth eutectic (LBE) systems is evaluated. The materials evaluated included refractory metals (W, Mo, and Ta), several U.S. steels [austenitic steel (316L), carbon steels (F-22, Fe-Si), ferritic/martensitic steels (HT-9 and 410)], and several experimental Fe-Si-Cr alloys that were expected to demonstrate corrosion resistance. The materials were exposed in either an LBE rotating electrode or a dynamic corrosion cell for periods from 100 to 1000 h at temperatures of 400, 500, 600, and 700 deg. C, depending on material and exposure location. Weight change and optical scanning electron microscopy or X-ray analysis ofmore » the specimen were used to characterize oxide film thickness, corrosion depth, microstructure, and composition changes. The results of corrosion tests validate the excellent resistance of refractory metals (W, Ta, and Mo) to LBE corrosion. The tests conducted with stainless steels (410, 316L, and HT-9) produced mass transfer of elements (e.g., Ni and Cr) into the LBE, resulting in degradation of the material. With Fe-Si alloys a Si-rich layer (as SiO{sub 2}) is formed on the surface during exposure to LBE from the selective dissolution of Fe.« less

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J.; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E.; Iacopi, Francesca

2015-10-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors.

PubMed

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E; Iacopi, Francesca

2015-10-30

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

A low cost X-ray imaging device based on BPW-34 Si-PIN photodiode

NASA Astrophysics Data System (ADS)

Emirhan, E.; Bayrak, A.; Yücel, E. Barlas; Yücel, M.; Ozben, C. S.

2016-05-01

A low cost X-ray imaging device based on BPW-34 silicon PIN photodiode was designed and produced. X-rays were produced from a CEI OX/70-P dental tube using a custom made ±30 kV power supply. A charge sensitive preamplifier and a shaping amplifier were built for the amplification of small signals produced by photons in the depletion layer of Si-PIN photodiode. A two dimensional position control unit was used for moving the detector in small steps to measure the intensity of X-rays absorbed in the object to be imaged. An Aessent AES220B FPGA module was used for transferring the image data to a computer via USB. Images of various samples were obtained with acceptable image quality despite of the low cost of the device.

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics

PubMed Central

Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; Pomerene, Andrew T.; Starbuck, Andrew L.; Lentine, Anthony L.; Stenger, Vincent; Mookherjea, Shayan

2016-01-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost. PMID:26927022

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics.

PubMed

Weigel, Peter O; Savanier, Marc; DeRose, Christopher T; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

2016-03-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

NASA Astrophysics Data System (ADS)

Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

2006-12-01

A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S.

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer intomore » the IGZO and resulted in higher resistivity films.« less

Role of Al in Zn bath on the formation of the inhibition layer during hot-dip galvanizing for a 1.2Si-1.5Mn transformation-induced plasticity steel

NASA Astrophysics Data System (ADS)

Wang, Kuang-Kuo; Hsu, Chiung-Wen; Chang, Liuwen; Gan, Dershin; Yang, Kuo-Cheng

2013-11-01

This study investigated the interaction between the Al in the Zn bath and the surface oxides formed by selective oxidation on a 1.2Si-1.5Mn TRIP steel during hot-dip galvanizing. XPS and TEM were employed for characterization. The results indicated that the amorphous xMnO·SiO2 oxide could react with Al to form a Si-Mn-Al-containing oxide. The crystalline MnSiO3 and Mn2SiO4 oxides could be largely reduced by Al to form holes in the oxide film. Consequently, the steel covered by a layer of mixed xMnO·SiO2 and MnSiO3 could form a continuous Fe2Al5 inhibition layer and showed the highest galvanizability among the three samples examined.

High performance a-Si solar cells and new fabrication methods for a-Si solar cells

NASA Astrophysics Data System (ADS)

Nakano, S.; Kuwano, Y.; Ohnishi, M.

1986-12-01

The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

Influence of patterning the TCO layer on the series resistance of thin film HIT solar cells

NASA Astrophysics Data System (ADS)

Champory, Romain; Mandorlo, Fabien; Seassal, Christian; Fave, Alain

2017-01-01

Thin HIT solar cells combine efficient surface passivation and high open circuit voltage leading to high conversion efficiencies. They require a TCO layer in order to ease carriers transfer to the top surface fingers. This Transparent Conductive Oxide layer induces parasitic absorption in the low wavelength range of the solar spectrum that limits the maximum short circuit current. In case of thin film HIT solar cells, the front surface is patterned in order to increase the effective life time of photons in the active material, and the TCO layer is often deposited with a conformal way leading to additional material on the sidewalls of the patterns. In this article, we propose an alternative scheme with a local etching of both the TCO and the front a-Si:H layers in order to reduce the parasitic absorption. We study how the local resistivity of the TCO evolves as a function of the patterns, and demonstrate how the increase of the series resistance can be compensated in order to increase the conversion efficiency.

Si-FeSi2/C nanocomposite anode materials produced by two-stage high-energy mechanical milling

NASA Astrophysics Data System (ADS)

Yang, Yun Mo; Loka, Chadrasekhar; Kim, Dong Phil; Joo, Sin Yong; Moon, Sung Whan; Choi, Yi Sik; Park, Jung Han; Lee, Kee-Sun

2017-05-01

High capacity retention Silicon-based nanocomposite anode materials have been extensively explored for use in lithium-ion rechargeable batteries. Here we report the preparation of Si-FeSi2/C nanocomposite through scalable a two-stage high-energy mechanical milling process, in which nano-scale Si-FeSi2 powders are besieged by the carbon (graphite/amorphous phase) layer; and investigation of their structure, morphology and electrochemical performance. Raman analysis revealed that the carbon layer structure comprised of graphitic and amorphous phase rather than a single amorphous phase. Anodes fabricated with the Si-FeSi2/C showed excellent electrochemical behavior such as a first discharge capacity of 1082 mAh g-1 and a high capacity retention until the 30th cycle. A remarkable coulombic efficiency of 99.5% was achieved within a few cycles. Differential capacity plots of the Si-FeSi2/C anodes revealed a stable lithium reaction with Si for lithiation/delithiation. The enhanced electrochemical properties of the Si-FeSi2/C nanocomposite are mainly attributed to the nano-size Si and stable solid electrolyte interface formation and highly conductive path driven by the carbon layer.

Passivated p-type silicon: Hole injection tunable anode material for organic light emission

NASA Astrophysics Data System (ADS)

Zhao, W. Q.; Ran, G. Z.; Xu, W. J.; Qin, G. G.

2008-02-01

We find that hole injection can be enhanced simply by selecting a lower-resistivity p-Si anode to match an electron injection enhancement for organic light emitting diodes with ultrathin-SiO2-layer-passivated p-Si anode (Si-OLED). For a Si-OLED with ordinary AlQ electron transport layer, the optimized resistivity of the p-Si anode is 40Ωcm; for that with n-doped Bphen electron transport layer, it decreases to 5Ωcm. Correspondingly, the maximum power efficiency increases from 0.3to1.9lm /W, even higher than that of an indium tin oxide control device (1.4lm/W). This passivated p-type silicon is a hole injection tunable anode material for OLED.

Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

PubMed Central

Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W.; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho

2016-01-01

The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO2 film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOxCy) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO2 films. Moreover, the plasma-assisted SiO2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density (Dit ≈ 1011 cm−2 · eV−1). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiOxCy species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO2 on SiC can be obtained by the controlling the formation of SiOxCy through the highly reactive direct plasma-assisted oxidation process. PMID:27721493

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Nanoscale charge transfer and diffusion at the MoS2/SiO2 interface by atomic force microscopy: contact injection versus triboelectrification.

PubMed

Xu, Rui; Ye, Shili; Xu, Kunqi; Lei, Le; Hussain, Sabir; Zheng, Zhiyue; Pang, Fei; Xing, Shuya; Liu, Xinmeng; Ji, Wei; Cheng, Zhihai

2018-08-31

Understanding the process of charge generation, transfer, and diffusion between two-dimensional (2D) materials and their supporting substrates is very important for potential applications of 2D materials. Compared with the systematic studies of triboelectric charging in a bulk sample, a fundamental understanding of the triboelectrification of the 2D material/insulator system is rather limited. Here, the charge transfer and diffusion of both the SiO 2 surface and MoS 2 /SiO 2 interface through contact electrification and frictional electrification are investigated systematically in situ by scanning Kelvin probe microscopy and dual-harmonic electrostatic force microscopy. Different from the simple static charge transfer between SiO 2 and the PtSi alloy atomic force microscope (AFM) tip, the charge transfer between the tip and the MoS 2 /SiO 2 system is complicated. Triboelectric charges, generated by contact or frictional electrification with the AFM tip, are trapped at the MoS 2 /SiO 2 interface and act as floating gates. The local charge discharge processes can be obtained by monitoring the surface potential. The charge decay time (τ) of the MoS 2 /SiO 2 interface is one (or two) orders of magnitude larger than the decay time τ of the SiO 2 surface. This work facilitates an understanding of the triboelectric and de-electrification of the interface between 2D materials and substrates. In addition to the charge transfer and diffusion, we demonstrate the nanopatterns of surface and interfacial charges, which have great potential for the application of self-assembly of charged nanostructures.

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Hansson, G. V.; Ni, W.-X.

A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si{sub 0.6}Ge{sub 0.4} layer on Si(001) by using molecular beam epitaxy (MBE), with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of {approx}400 deg. C, followed by a 20 nm Si{sub 0.6}Ge{sub 0.4} layer grown at temperatures ranging from 50 to 550 deg. C. A significant relaxation increase together with a surface roughness decrease both by a factor of {approx}2, accompaniedmore » with the cross-hatch/cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si{sub 0.6}Ge{sub 0.4} layer that was grown at {approx}200 deg. C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si{sub 0.6}Ge{sub 0.4} layer.« less

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

NASA Astrophysics Data System (ADS)

Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

2018-05-01

A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

Epitaxial solar cells fabrication

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1975-01-01

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo

2014-09-26

A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm,more » as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.« less

Effects of SiO 2 overlayer at initial growth stage of epitaxial Y 2O 3 film growth

NASA Astrophysics Data System (ADS)

Cho, M.-H.; Ko, D.-H.; Choi, Y. G.; Lyo, I. W.; Jeong, K.; Whang, C. N.

2000-12-01

We investigated the dependence of the Y 2O 3 film growth on Si surface at initial growth stage. The reflection high-energy electron diffraction, X-ray scattering, and atomic force microscopy showed that the film crystallinity and morphology strongly depended on whether Si surface contained O or not. In particular, the films grown on oxidized surfaces revealed significant improvement in crystallinity and surface smoothness. A well-ordered atomic structure of Y 2O 3 film was formed on 1.5 nm thick SiO 2 layer with the surface and interfacial roughness markedly enhanced, compared with the film grown on the clean Si surfaces. The epitaxial film on the oxidized Si surface exhibited extremely small mosaic structures at interface, while the film on the clean Si surface displayed an island-like growth with large mosaic structures. The nucleation sites for Y 2O 3 were provided by the reaction between SiO 2 and Y at the initial growth stage. The SiO 2 layer known to hinder crystal growth is found to enhance the nucleation of Y 2O 3, and provides a stable buffer layer against the silicide formation. Thus, the formation of the initial SiO 2 layer is the key to the high-quality epitaxial growth of Y 2O 3 on Si.

Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Kar, Debjit

2017-12-01

A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

PubMed

Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

2011-05-23

We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

NASA Astrophysics Data System (ADS)

Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

2017-03-01

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

Layer uniformity in glucose oxidase immobilization on SiO 2 surfaces

NASA Astrophysics Data System (ADS)

Libertino, Sebania; Scandurra, Antonino; Aiello, Venera; Giannazzo, Filippo; Sinatra, Fulvia; Renis, Marcella; Fichera, Manuela

2007-09-01

The goal of this work was the characterization, step by step, of the enzyme glucose oxidase (GOx) immobilization on silicon oxide surfaces, mainly by means of X-Ray photoelectron spectroscopy (XPS). The immobilization protocol consists of four steps: oxide activation, silanization, linker molecule deposition and GOx immobilization. The linker molecule, glutaraldehyde (GA) in this study, must be able to form a uniform layer on the sample surface in order to maximize the sites available for enzyme bonding and achieve the best enzyme deposition. Using a thin SiO 2 layer grown on Si wafers and following the XPS Si2p signal of the Si substrate during the immobilization steps, we demonstrated both the glutaraldehyde layer uniformity and the possibility to use XPS to monitor thin layer uniformity. In fact, the XPS substrate signal, not shielded by the oxide, is suppressed only when a uniform layer is deposited. The enzyme correct immobilization was monitored using the XPS C1s and N1s signals. Atomic force microscopy (AFM) measurements carried out on the same samples confirmed the results.

Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emery, Jonathan D., E-mail: jdemery@anl.gov, E-mail: bedzyk@northwestern.edu; Johns, James E.; McBriarty, Martin E.

2014-10-20

The intercalation of various atomic species, such as hydrogen, to the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene overlayers. Here, we use high-resolution X-ray reflectivity to investigate the structural consequences of the hydrogen intercalation process used in the formation of quasi-free-standing (QFS) EG/SiC(0001). We confirm that the interfacial layer is converted to a layer structurally indistinguishable from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene layers within the film, is vertically displacedmore » by ∼2.1 Å. The number of total carbon layers is conserved during the process, and we observe no other structural changes such as interlayer intercalation or expansion of the graphene d-spacing. These results clarify the under-determined structure of hydrogen intercalated QFS-EG/SiC(0001) and provide a precise model to inform further fundamental and practical understanding of the system.« less

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

PubMed Central

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-01-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I–V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later. PMID:28252106

Interaction of metal layers with polycrystalline Si

NASA Technical Reports Server (NTRS)

Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

1976-01-01

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

NASA Astrophysics Data System (ADS)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

PubMed

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-02

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

Characterization of SiGe/Ge heterostructures and graded layers using variable angle spectroscopic ellipsometry

NASA Technical Reports Server (NTRS)

Croke, E. T.; Wang, K. L.; Heyd, A. R.; Alterovitz, S. A.; Lee, C. H.

1996-01-01

Variable angle spectroscopic ellipsometry (VASE) has been used to characterize Si(x)Ge(1-x)/Ge superlattices (SLs) grown on Ge substrates and thick Si(x)Ge(1-x)/Ge heterostructures grown on Si substrates. Our VASE analysis yielded the thicknesses and alloy compositions of all layers within the optical penetration depth of the surface. In addition, strain effects were observed in the VASE results for layers under both compressive and tensile strain. Results for the SL structures were found to be in close agreement with high resolution x-ray diffraction measurements made on the same samples. The VASE analysis has been upgraded to characterize linearly graded Si(x)Ge(1-x) buffer layers. The algorithm has been used to determine the total thickness of the buffer layer along with the start and end alloy composition by breaking the total thickness into many (typically more than 20) equal layers. Our ellipsometric results for 1 (mu)m buffer layers graded in the ranges 0.7 less than or = x less than or = 1.0, and 0.5 less than or = x less than or = 1.0 are presented, and compare favorably with the nominal values.

The investigation of optimal Silicon/Silicon(1-x)Germanium(x) thin-film solar cells with quantitative analysis

NASA Astrophysics Data System (ADS)

Ehsan, Md Amimul

Thin-film solar cells are emerging from the research laboratory to become commercially available devices for low cost electrical power generation applications. Silicon which is a cheap, abundant and non-toxic elemental semiconductor is an attractive candidate for these solar cells. Advanced modeling and simulation of Si thin-film solar cells has been performed to make this technology more cost effective without compromising the performance and efficiency. In this study, we focus on the design and optimization of Si/Si1-xGex heterostructures, and microcrystalline and nanocrystalline Si thin-film solar cells. Layer by layer optimization of these structures was performed by using advanced bandgap engineering followed by numerical analysis for their structural, electrical and optical characterizations. Special care has been introduced for the selection of material layers which can help to improve the light absorption properties of these structures for harvesting the solar spectrum. Various strategies such as the optimization of the doping concentrations, Ge contents in Si1-xGex buffer layer, incorporation of the absorber layers and surface texturing have been in used to improve overall conversion efficiencies of the solar cells. To be more specific, the observed improvement in the conversion efficiency of these solar cells has been calculated by tailoring the thickness of the buffer, absorber, and emitter layers. In brief, an approach relying on the phenomena of improved absorption of the buffer and absorber layer which leads to a corresponding gain in the open circuit voltage and short circuit current is explored. For numerical analysis, a PC1D simulator is employed that uses finite element analysis technique for solving semiconductor transport equations. A comparative study of the Si/Si1-xGex and Ge/Si1-xGex is also performed. We found that due to the higher lattice mismatch of Ge to Si, thin-film solar cells based on Si/Si1-xGex heterostructures performed much better. It has been found that microc-Si and nc-Si pin structures have strong dependence on their grain sizes and crystallinity to enhance the light absorption capability of these solar cells. Our results show that silicon based thin-film solar cells exhibit high level of performance making them very competitive for the next generation of low cost photovoltaic technology.

Physical and Electrical Properties of SiO2 Layer Synthesized by Eco-Friendly Method

NASA Astrophysics Data System (ADS)

Jong-Woong Kim,; Young-Seok Kim,; Sung-Jei Hong,; Tae-Hwan Hong,; Jeong-In Han,

2010-05-01

SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source

NASA Astrophysics Data System (ADS)

Maruyama, Takahiro; Yamashita, Yutaka; Saida, Takahiro; Tanaka, Shin-ichiro; Naritsuka, Shigeya

2017-06-01

We demonstrated direct synthesis of graphene films consisting of a few layers (few-layered graphene) on sapphire substrates by liquid-phase growth (LPG), using liquid Ga as the melt and SiC micropowder as the source material. When the dissolution temperature was above 700 °C, almost all Si atoms of SiC diffused into the Ga melt and only carbon atoms remained at the interface beneath the liquid Ga. Above 800 °C, X-ray photoelectron spectra showed that most of the remaining carbon was graphitized. When the dissolution temperature was 1000 °C, Raman spectra showed that few-layered graphene films grew on the sapphire substrates.

Atomic Layer Deposition of HfO2 and Si Nitride on Ge Substrates

NASA Astrophysics Data System (ADS)

Zhu, Shiyang; Nakajima, Anri

2007-12-01

Hafnium oxide (HfO2) thin films were deposited on Ge substrates at 300 °C using atomic layer deposition (ALD) with tetrakis(diethylamino)hafnium (termed as TDEAH) as a precursor and water as an oxidant. The deposition rate was estimated to be 0.09 nm/cycle and the deposited HfO2 films have a smooth surface and an almost stoichiometric composition, indicating that the growth follows a layer-by-layer kinetics, similarly to that on Si substrates. Si nitride thin films were also deposited on Ge by ALD using SiCl4 as a precursor and NH3 as an oxidant. Si nitride has a smaller deposition rate of about 0.055 nm/cycle and a larger gate leakage current than HfO2 deposited on Ge by ALD.

Glass-Si heterojunction solar cells

NASA Technical Reports Server (NTRS)

Anderson, R. L.

1975-01-01

Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.

Amorphous and crystalline silicon based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Schüttauf, J. A.

2011-10-01

In this thesis, research on amorphous and crystalline silicon heterojunction (SHJ) solar cells is described. Probably the most important feature of SHJ solar cells is a thin intrinsic amorphous silicion (a-Si:H) layer that is deposited before depositing the doped emitter and back surface field. The passivation properties of such intrinsic layers made by three different chemical vapor deposition (CVD) techniques have been investigated. For layers deposited at 130°C, all techniques show a strong reduction in surface recombination velocity (SRV) after annealing. Modelling indicates that dangling bond saturation by atomic hydrogen is the predominant mechanism. We obtain outstanding carrier lifetimes of 10.3 ms, corresponding to SRVs of 0.56 cm/s. For a-Si:H films made at 250°C, an as-deposited minority carrier lifetime of 2.0 ms is observed. In contrast to a-Si:H films fabricated at 130°C, however, no change in passivation quality upon thermal annealing is observed. These films were fabricated for the first time using a continuous in-line HWCVD mode. Wafer cleaning before a-Si:H deposition is a crucial step for c-Si surface passivation. We tested the influence of an atomic hydrogen treatment before a-Si:H deposition on the c-Si surface. The treatments were performed in a new virgin chamber to exclude Si deposition from the chamber walls. Subsequently, we deposited a-Si:H layers onto the c-Si wafers and measured the lifetime for different H treatment times. We found that increasing hydrogen treatment times led to lower effective lifetimes. Modelling of the measured minority carrier lifetime data shows that the decreased passivation quality is caused by an increased defect density at the amorphous-crystalline interface. Furtheremore, the passivation of different a-Si:H containing layers have been tested. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation up to 255°C and 270°C is observed. This improvement is attributed to dangling bond saturation by H, whereas the decrease at higher temperatures is caused by H effusion. For intrinsic/n-type a-Si:H layer stacks, a record minority carrier lifetime of 13.3 ms is obtained. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed over the whole temperature range, due to the asymmetric Fermi-level dependent defect formation enthalpy in n- and p-type a-Si:H. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is observed that the intrinsic/p-layer stack is limiting device performance. Based on these findings, the solar cells were prepared in a modified order, reaching an efficiency of 16.7% (VOC = 681 mV), versus 15.8% (VOC = 659 mV) in the ‘standard’ order. Finally, transparent conductive oxide (TCO) layers are studied for application into solar cells. It is observed that both types of TCO deposition have no significant influence on the passivation properties of standard a-Si:H layer stacks forming the emitter structure in the used SHJ cells. On flat wafers, a conversion efficiency of 16.7% has been obtained when ITO is used as TCO, versus an efficiency of 16.3% for ZnO:Al; slightly lower due to increased electrical losses.

Mo/Si multilayers with enhanced TiO II- and RuO II-capping layers

NASA Astrophysics Data System (ADS)

Yulin, Sergiy; Benoit, Nicolas; Feigl, Torsten; Kaiser, Norbert; Fang, Ming; Chandhok, Manish

2008-03-01

The lifetime of Mo/Si multilayer-coated projection optics is one of the outstanding issues on the road of commercialization of extreme-ultraviolet lithography (EUVL). The application of Mo/Si multilayer optics in EUVL requires both sufficient radiation stability and also the highest possible normal-incidence reflectivity. A serious problem of conventional high-reflective Mo/Si multilayers capped by silicon is the considerable degradation of reflective properties due to carbonization and oxidation of the silicon surface layer under exposure by EUV radiation. In this study, we focus on titanium dioxide (TiO II) and ruthenium dioxide (RuO II) as promising capping layer materials for EUVL multilayer coatings. The multilayer designs as well as the deposition parameters of the Mo/Si systems with different capping layers were optimized in terms of maximum peak reflectivity at the wavelength of 13.5 nm and longterm stability under high-intensive irradiation. Optimized TiO II-capped Mo/Si multilayer mirrors with an initial reflectivity of 67.0% presented a reflectivity drop of 0.6% after an irradiation dose of 760 J/mm2. The reflectivity drop was explained by the partial oxidation of the silicon sub-layer. No reflectivity loss after similar irradiation dose was found for RuO II-capped Mo/Si multilayer mirrors having initial peak reflectivity of 66%. In this paper we present data on improved reflectivity of interface-engineered TiO II- and RuO II-capped Mo/Si multilayer mirrors due to the minimization of both interdiffusion processes inside the multilayer stack and absorption loss in the oxide layer. Reflectivities of 68.5% at the wavelength of 13.4 nm were achieved for both TiO II- and RuO II-capped Mo/Si multilayer mirrors.

Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers.

PubMed

Higashitarumizu, Naoki; Ishikawa, Yasuhiko

2017-09-04

Enhanced direct-gap light emission is reported for Si-capped n + -Ge layers on Si after post-growth rapid cyclic annealing (RCA), and impact of non-radiative recombination (NRR) at the Ge/Si interface is discussed toward Ge/Si double heterostructure (DH) lasers. P-doped n + -Ge layer (1 × 10 19 cm -3 , 400 nm) is grown on Si by ultra-high vacuum chemical vapor deposition, followed by a growth of Si capping layer (5 nm) to form a Si/Ge/Si DH structure. Post-growth RCA to eliminate defects in Ge is performed in N 2 at temperatures between 900°C and 780°C, where the annealing time is minimized to be 5 s in each RCA cycle to prevent an out-diffusion of P dopants from the Ge surface. Direct-gap photoluminescence (PL) intensity at 1.6 µm increases with the RCA cycles up to 40, although the threading dislocation density in Ge is not reduced after 3 cycles in the present condition. The PL enhancement is ascribed to the suppression of NRR at the Ge/Si interface, where an intermixed SiGe alloy is formed. For Ge/Si DH lasers, NRR at the Ge/Si interface is found to have a significant impact on the threshold current density Jth. In order to achieve Jth on the order of 1 kA/cm 2 , similar to III-V lasers, the interface recombination velocity S is required below 10 3 cm/s in spite of S as large as 10 5 cm/s at the ordinary defect-rich Ge/Si interface.

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

Demonstration and Analysis of Materials Processing by Ablation Plasma Ion Implantation (APII)

NASA Astrophysics Data System (ADS)

Qi, B.; Gilgenbach, R. M.; Lau, Y. Y.; Jones, M. C.; Lian, J.; Wang, L. M.; Doll, G. L.; Lazarides, A.

2001-10-01

Experiments have demonstrated laser-ablated Fe ion implantation into Si substrates. Baseline laser deposited films (0 kV) showed an amorphous Fe-Si film overlying the Si substrate with a top layer of nanocrystalline Fe. APII films exhibited an additional Fe ion-induced damage layer, extending 7.6 nm below the Si surface. The overlying Fe-Si layer and Fe top layer were amorphized by fast ions. Results were confirmed by XPS vs Ar ion etching time for depth profile of the deposited films. XPS showed primarily Fe (top layer), transitioning to roughly equal Fe/Si , then mostly Si with lower Fe (implanted region). These data clearly prove Fe ion implantation into Si, verifying the feasibility of APII as an ion acceleration and implantation process [1]. SRIM simulations predict about 20 percent deeper Fe ion penetration than data, due to:(a) Subsequent ions must pass through the Fe film deposited by earlier ions, and (b) the bias voltage has a slow rise and fall time. Theoretical research has developed the scaling laws for APII [2]. Recently, a model has successfully explained the shortening of the decay time in the high voltage pulse with the laser ablation plasma. This reduces the theoretical RC time constant, which agrees with the experimental data. * Research supported by National Science Foundation Grant CTS-9907106 [1] Appl. Phys. Lett. 78, 3785 (2001) [2] Appl. Phys. Lett. 78, 706 (2001)),

Electrical properties of double layer dielectric structures for space technology

NASA Astrophysics Data System (ADS)

Lian, Anqing

1993-04-01

Polymeric films such as polyimide (PI) and polyethylene terephthalate (PET) are used in space technology as thermal blankets. Thin SiO2 and SiN coatings plasma deposited onto PI and PET surfaces were proposed to protect the blanket materials against the space environment. The electrical properties of this kind of dual layer dielectric structure were investigated to understand the mechanisms for suppressing charge accumulation and flashover. Bulk and surface electrical conductivities of thin single-layer PI and PET samples and of the dual layer SiO2 and SiN combinations with PI and PET were measured in a range of applied electrical fields. The capacitance voltage (CV) technique was used for analyzing charge transport and distribution in the structures. The electric current in the bulk of the SiO2/PI and SiN/PI samples was found to depend on the polarity of the electric field. Other samples did not exhibit any such polarity effect. The polarity dependence is attributed to charge trapping at the PI/plasma deposit interface. The CV characteristics of the Al-PI-SiO2-Si structure confirm that charges which can modify the local electric field can be trapped near the interface. A model is proposed to interpret the properties of the currents in dual layer structures. This model can semi-quantitatively explain all the observed results.

Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

DOE PAGES

Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; ...

2015-02-05

The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

NASA Astrophysics Data System (ADS)

Tang, Hengjing; Wu, Xiaoli; Xu, Qinfei; Liu, Hongyang; Zhang, Kefeng; Wang, Yang; He, Xiangrong; Li, Xue; Gong, Hai Mei

2008-03-01

The fabrication of Au/SiNx/InP metal-insulator-semiconductor (MIS) diodes has been achieved by depositing a layer of SiNx on the (NH4)2Sx-treated n-InP. The SiNx layer was deposited at 200 °C using plasma-enhanced chemical vapor deposition (PECVD). The effect of passivation on the InP surface before and after annealing was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements, and Auger electron spectroscopy (AES) analysis was used to investigate the depth profiles of several atoms. The results indicate that the SiNx passivation layer exhibits good insulative characteristics. The annealing process causes distinct inter-diffusion in the SiNx/InP interface and contributes to the decrease of the fixed charge density and minimum interface state density, which are 1.96 × 1012 cm-2 and 7.41 × 1011 cm-2 eV-1, respectively. A 256 × 1 InP/InGaAs/InP heterojunction photodiode, fabricated with sulfidation and SiNx passivation layer, has good response uniformity.

Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization

NASA Astrophysics Data System (ADS)

Hong, Won-Eui; Ro, Jae-Sang

2015-01-01

Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films is carried out by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. Arc instability, however, is observed during crystallization, and is attributed to dielectric breakdown in the conductor/insulator/transformed polycrystalline silicon (poly-Si) sandwich structures at high temperatures during electrical pulsing for crystallization. In this study, we devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. The Mo layer was used as a Joule-heat source for the crystallization of pre-patterned active islands of a-Si films. JIC-processed poly-Si thin-film transistors (TFTs) were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs.