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Sample records for si rezultatele imediate

  1. Topoisomerase I-Mediated DNA Cleavage Induced by the Minor Groove-Directed Binding of Bibenzimidazoles to a Distal Site

    PubMed Central

    Khan, Qasim A.; Pilch, Daniel S.

    2007-01-01

    Summary Many agents (e.g., camptothecins, indolocarbazoles, indenoisoquinolines, and dibenzonaphthyridines) stimulate topoisomerase I-mediated DNA cleavage (a behavior termed topoisomerase I poisoning) by interacting with both the DNA and the enzyme at the site of cleavage (typically by intercalation between the −1 and +1 base pairs). The bibenzimidazoles, which include Hoechst 33258 and 33342, are a family of DNA minor groove-directed agents that also stimulate topoisomerase I-mediated DNA cleavage. However, the molecular mechanism by which these ligands poison TOP1 is poorly understood. Toward this goal, we have used a combination of mutational, footprinting, and DNA binding affinity analyses to define the DNA binding site for Hoechst 33258 and a related derivative that results in optimal induction of TOP1-mediated DNA cleavage. We show that this DNA binding site is located downstream from the site of DNA cleavage, encompassing the base pairs from position +4 to +8. The distal nature of this binding site relative to the site of DNA cleavage suggests that minor groove-directed agents like the bibenzimidazoles poison TOP1 via a mechanism distinct from compounds like the camptothecins, which interact at the site of cleavage. PMID:17095016

  2. ROCK I-mediated activation of NF-κB by RhoB

    PubMed Central

    Rodriguez, Pedro L.; Sahay, Sutapa; Olabisi, Oyenike O.; Whitehead, Ian P.

    2007-01-01

    RhoB is a short-lived protein whose expression is increased by a variety of extra-cellular stimuli including UV irradiation, epidermal growth factor (EGF) and transforming growth factor β (TGF-β). Whereas most Rho proteins are modified by the covalent attachment of a geranylgeranyl group, RhoB is unique in that it can exist in either a geranylgeranylated (RhoB-GG) or a farnesylated (RhoB-F) form. Although each form is proposed to have different cellular functions, the signaling events that underlie these differences are poorly understood. Here we show that RhoB can activate NF-κB signaling in multiple cell types. Whereas RhoB-F is a potent activator of NF-κB, much weaker activation is observed for RhoB-GG, RhoA, and RhoC. NF-κB activation by RhoB is not associated with increased nuclear translocation of RelA/p65, but rather, by modification of the RelA/p65 transactivation domain. Activation of NF-κB by RhoB is dependent upon ROCK I but not PRK I. Thus, ROCK I cooperates with RhoB to activate NF-κB, and suppression of ROCK I activity by genetic or pharmacological inhibitors blocks NF-κB activation. Suppression of RhoB activity by dominant-inhibitory mutants, or siRNA, blocks NF-κB activation by Bcr, and TSG101, but not by TNFα or oncogenic Ras. Collectively, these observations suggest the existence of an endosome-associated pathway for NF-κB activation that is preferentially regulated by the farnesylated form of RhoB. PMID:17728102

  3. An Alternative Method to Facilitate cDNA Cloning for Expression Studies in Mammalian Cells by Introducing Positive Blue White Selection in Vaccinia Topoisomerase I-Mediated Recombination.

    PubMed

    Udo, Hiroshi

    2015-01-01

    One of the most basic techniques in biomedical research is cDNA cloning for expression studies in mammalian cells. Vaccinia topoisomerase I-mediated cloning (TOPO cloning by Invitrogen) allows fast and efficient recombination of PCR-amplified DNAs. Among TOPO vectors, a pcDNA3.1 directional cloning vector is particularly convenient, since it can be used for expression analysis immediately after cloning. However, I found that the cloning efficiency was reduced when RT-PCR products were used as inserts (about one-quarter). Since TOPO vectors accept any PCR products, contaminating fragments in the insert DNA create negative clones. Therefore, I designed a new mammalian expression vector enabling positive blue white selection in Vaccinia topoisomerase I-mediated cloning. The method utilized a short nontoxic LacZα peptide as a linker for GFP fusion. When cDNAs were properly inserted into the vector, minimal expression of the fusion proteins in E. coli (harboring lacZΔM15) resulted in formation of blue colonies on X-gal plates. This method improved both cloning efficiency (75%) and directional cloning (99%) by distinguishing some of the negative clones having non-cording sequences, since these inserts often disturbed translation of lacZα. Recombinant plasmids were directly applied to expression studies using GFP as a reporter. Utilization of the P2A peptide allowed for separate expression of GFP. In addition, the preparation of Vaccinia topoisomerase I-linked vectors was streamlined, which consisted of successive enzymatic reactions with a single precipitation step, completing in 3 hr. The arrangement of unique restriction sites enabled further modification of vector components for specific applications. This system provides an alternative method for cDNA cloning and expression in mammalian cells. PMID:26422141

  4. Topoisomerase I-mediated DNA cleavage as a guide to the development of antitumor agents derived from the marine alkaloid lamellarin D: triester derivatives incorporating amino acid residues.

    PubMed

    Tardy, Christelle; Facompré, Michaël; Laine, William; Baldeyrou, Brigitte; García-Gravalos, Dolores; Francesch, Andrés; Mateo, Cristina; Pastor, Alfredo; Jiménez, José A; Manzanares, Ignacio; Cuevas, Carmen; Bailly, Christian

    2004-04-01

    The marine alkaloid lamellarin D (LAM-D) has been recently characterized as a potent poison of human topoisomerase I endowed with remarkable cytotoxic activities against tumor cells. We report here the first structure-activity relationship study in the LAM-D series. Two groups of triester compounds incorporating various substituents on the three phenolic OH at positions 8, 14 and 20 of 6H-[1]benzopyrano[4',3':4,5]pyrrolo[2,1-a]isoquinolin-6-one pentacyclic planar chromophore typical of the parent alkaloid were tested as topoisomerase I inhibitors. The non-amino compounds in group A showed no activity against topoisomerase I and were essentially non cytotoxic. In sharp contrast, compounds in group B incorporating amino acid residues strongly promoted DNA cleavage by human topoisomerase I. LAM-D derivatives tri-substituted with leucine, valine, proline, phenylalanine or alanine residues, or a related amino side chain, stabilize topoisomerase I-DNA complexes. The DNA cleavage sites detected at T downward arrow G or C downward arrow G dinucleotides with these molecules were identical to that of LAM-D but slightly different from those seen with camptothecin which stimulates topoisomerase I-mediated cleavage at T downward arrow G only. In the DNA relaxation and cleavage assays, the corresponding Boc-protected compounds and the analogues of the non-planar LAM-501 derivative lacking the 5-6 double bond in the quinoline B-ring showed no effect on topoisomerase I and were considerably less cytotoxic than the corresponding cationic compounds in the LAM-D series. The presence of positive charges on the molecules enhances DNA interaction but melting temperature studies indicate that DNA binding is not correlated with topoisomerase I inhibition or cytotoxicity. Cell growth inhibition by the 41 lamellarin derivatives was evaluated with a panel of tumor cells lines. With prostate (DU-145 and LN-CaP), ovarian (IGROV and IGROV-ET resistant to ecteinascidin-743) and colon (LoVo and

  5. An Alternative Method to Facilitate cDNA Cloning for Expression Studies in Mammalian Cells by Introducing Positive Blue White Selection in Vaccinia Topoisomerase I-Mediated Recombination

    PubMed Central

    Udo, Hiroshi

    2015-01-01

    One of the most basic techniques in biomedical research is cDNA cloning for expression studies in mammalian cells. Vaccinia topoisomerase I-mediated cloning (TOPO cloning by Invitrogen) allows fast and efficient recombination of PCR-amplified DNAs. Among TOPO vectors, a pcDNA3.1 directional cloning vector is particularly convenient, since it can be used for expression analysis immediately after cloning. However, I found that the cloning efficiency was reduced when RT-PCR products were used as inserts (about one-quarter). Since TOPO vectors accept any PCR products, contaminating fragments in the insert DNA create negative clones. Therefore, I designed a new mammalian expression vector enabling positive blue white selection in Vaccinia topoisomerase I–mediated cloning. The method utilized a short nontoxic LacZα peptide as a linker for GFP fusion. When cDNAs were properly inserted into the vector, minimal expression of the fusion proteins in E. coli (harboring lacZΔM15) resulted in formation of blue colonies on X-gal plates. This method improved both cloning efficiency (75%) and directional cloning (99%) by distinguishing some of the negative clones having non-cording sequences, since these inserts often disturbed translation of lacZα. Recombinant plasmids were directly applied to expression studies using GFP as a reporter. Utilization of the P2A peptide allowed for separate expression of GFP. In addition, the preparation of Vaccinia topoisomerase I-linked vectors was streamlined, which consisted of successive enzymatic reactions with a single precipitation step, completing in 3 hr. The arrangement of unique restriction sites enabled further modification of vector components for specific applications. This system provides an alternative method for cDNA cloning and expression in mammalian cells. PMID:26422141

  6. The novel complement inhibitor human CUB and Sushi multiple domains 1 (CSMD1) protein promotes factor I-mediated degradation of C4b and C3b and inhibits the membrane attack complex assembly.

    PubMed

    Escudero-Esparza, Astrid; Kalchishkova, Nikolina; Kurbasic, Emila; Jiang, Wen G; Blom, Anna M

    2013-12-01

    CUB and Sushi multiple domains 1 (CSMD1) is a transmembrane protein containing 15 consecutive complement control protein (CCP) domains, which are characteristic for complement inhibitors. We expressed a membrane-bound fragment of human CSMD1 composed of the 15 C-terminal CCP domains and demonstrated that it inhibits deposition of C3b by the classical pathway on the surface of Chinese hamster ovary cells by 70% at 6% serum and of C9 (component of membrane attack complex) by 90% at 1.25% serum. Furthermore, this fragment of CSMD1 served as a cofactor to factor I-mediated degradation of C3b. In all functional assays performed, well-characterized complement inhibitors were used as positive controls, whereas Coxsackie adenovirus receptor, a protein with no effect on complement, was a negative control. Moreover, attenuation of expression in human T47 breast cancer cells that express endogenous CSMD1 significantly increased C3b deposition on these cells by 45% at 8% serum compared with that for the controls. Furthermore, by expressing a soluble 17-21 CCP fragment of CSMD1, we found that CSMD1 inhibits complement by promoting factor I-mediated C4b/C3b degradation and inhibition of MAC assembly at the level of C7. Our results revealed a novel complement inhibitor for the classical and lectin pathways.

  7. The novel complement inhibitor human CUB and Sushi multiple domains 1 (CSMD1) protein promotes factor I-mediated degradation of C4b and C3b and inhibits the membrane attack complex assembly.

    PubMed

    Escudero-Esparza, Astrid; Kalchishkova, Nikolina; Kurbasic, Emila; Jiang, Wen G; Blom, Anna M

    2013-12-01

    CUB and Sushi multiple domains 1 (CSMD1) is a transmembrane protein containing 15 consecutive complement control protein (CCP) domains, which are characteristic for complement inhibitors. We expressed a membrane-bound fragment of human CSMD1 composed of the 15 C-terminal CCP domains and demonstrated that it inhibits deposition of C3b by the classical pathway on the surface of Chinese hamster ovary cells by 70% at 6% serum and of C9 (component of membrane attack complex) by 90% at 1.25% serum. Furthermore, this fragment of CSMD1 served as a cofactor to factor I-mediated degradation of C3b. In all functional assays performed, well-characterized complement inhibitors were used as positive controls, whereas Coxsackie adenovirus receptor, a protein with no effect on complement, was a negative control. Moreover, attenuation of expression in human T47 breast cancer cells that express endogenous CSMD1 significantly increased C3b deposition on these cells by 45% at 8% serum compared with that for the controls. Furthermore, by expressing a soluble 17-21 CCP fragment of CSMD1, we found that CSMD1 inhibits complement by promoting factor I-mediated C4b/C3b degradation and inhibition of MAC assembly at the level of C7. Our results revealed a novel complement inhibitor for the classical and lectin pathways. PMID:23964079

  8. SI Notes.

    ERIC Educational Resources Information Center

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  9. The Basic SI Model

    ERIC Educational Resources Information Center

    Hurley, Maureen; Jacobs, Glen; Gilbert, Melinda

    2006-01-01

    A general overview of the SI model is provided, including the SI philosophy, essential components of the program, program structures, key roles, outcomes, and evaluation. A review of what we have learned about the importance of planning SI sessions, providing ongoing training for leaders, conducting regular SI program assessments, and implementing…

  10. Si/IrSi3 Schottky-Barrier Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Si/IrSi or Si/IrSi3 Schottky-barrier detector fabricated by stoichiometric codeposition of Ir and Si on p Si substrate. Includes p+ substrate contact, silicide electrode, and n Si guard ring, which suppresses leakage around periphery of silicide electrode. Part of continuing effort to develop imaging arrays of Schottky-barrier detectors operating at far-infrared wavelengths.

  11. Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses

    NASA Technical Reports Server (NTRS)

    Schowengerdt, F. D.; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    The Si/CoSi2/Si heterostructures prepared by codeposition and solid-phase epitaxy on Si(111) substrates were characterized using Auger plasmon data as a measure of Si overlayer thickness. The method of calibration is described, and the results of two studies, including a study of islanding in Si/CoSi2/Si and a study of diffusion in CoSi2/Si are presented, illustrating the utility of the Auger plasmon loss technique. It is shown that, most likely, the diffusion proceeds through residual defects in the CoSi2.

  12. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  13. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  14. Reactions of Hydrogen with Si-SiO2 Interfaces

    NASA Astrophysics Data System (ADS)

    Rashkeev, Sergey N.

    2001-11-01

    Three different types of behavior have been observed for H in Si-SiO2 structures: a) Radiation experiments established that H^+ released in SiO2 migrates to the Si-SiO2 interface where it induces new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H^+ can be cycled to and from the interface by reversing the oxide electric field; c) Hydrogen is known to passivate Si dangling bonds at the Si-SiO2 interface, but the subsequent arrival of H^+ at the interface causes depassivation of Si-H bonds. We report first-principles calculations that identify atomic-scale mechanisms for the different types of behavior and the conditions that are necessary for each. We show that the Si-Si bonds on the oxide side, i.e., ``suboxide bonds'', can trap H^+ in deep wells with asymmetric barrier (1.5 eV on the Si side, 1 eV on the SiO2 side). In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposite Si-SiO2 interfaces if the density of suboxide bonds is high. Also, we establish that H^+ is the only stable charge state at the interface and that H^+ reacts directly (without being neutralized by a Si electron) with a Si-H bond, forming an H2 molecule and a positively charged dangling bond (Pb center). As a result, H-induced interface-trap formation does not depend on the availability of Si electrons. This work was supported in part by AFOSR Grant F-49620-99-1-0289.

  15. Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Stavola, Michael; Rohatgi, A.; Kim, D.; Holt, J.; Atwater, H.; Kalejs, J.

    2003-08-01

    A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.

  16. A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals

    PubMed Central

    2012-01-01

    The electroluminescence (EL) and photoluminescence of Si nanocrystals (Si-nc) from multilayered samples of Si/SiO are investigated. Si-nc are formed within Si and SiO layers after furnace annealing. It is found that the presence of Si interlayers creates extra carrier paths for EL emission. A comparative study is further performed on a multilayered Si/SiO sample and a single-layered one with Si and SiO homogeneously mixed. Both samples have the same ratio of Si to O and the same contents of Si and O. The multilayered sample is found to have higher EL intensity, less turn-on voltage, lower resistance, and higher current efficiency than the single-layered one. The results indicate that Si interlayers in Si/SiO may act as carrier channels, which promote carrier transport and enhance the EL emission of Si-nc. PMID:22448989

  17. SI (Metric) handbook

    NASA Technical Reports Server (NTRS)

    Artusa, Elisa A.

    1994-01-01

    This guide provides information for an understanding of SI units, symbols, and prefixes; style and usage in documentation in both the US and in the international business community; conversion techniques; limits, fits, and tolerance data; and drawing and technical writing guidelines. Also provided is information of SI usage for specialized applications like data processing and computer programming, science, engineering, and construction. Related information in the appendixes include legislative documents, historical and biographical data, a list of metric documentation, rules for determining significant digits and rounding, conversion factors, shorthand notation, and a unit index.

  18. SI: The Stellar Imager

    NASA Technical Reports Server (NTRS)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  19. Reactions of Hydrogen with Si-SiO2 Interfaces

    NASA Astrophysics Data System (ADS)

    Rashkeev, S. N.; Pantelides, S. T.; Buczko, R.; Fleetwood, D. M.; Schrimpf, R. D.

    2001-03-01

    Two contrasting behaviors have been observed for H in Si-SiO2 structures: a) Radiation experiments established that H^+ released in SiO2 migrates to the Si-SiO2 interface where it induces new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H^+ can be cycled to and from the interface by reversing the oxide electric field. We report first-principles calculations that identify atomic-scale mechanisms for the two types of behavior and the conditions that are necessary for each. Si-Si bonds on the oxide side, i.e., ``suboxide bonds'', can trap H^+ in deep wells with asymmetric barrier (1.5 eV on the Si side, 1 eV on the SiO2 side). In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposite Si-SiO2 interfaces if the density of suboxide bonds is high. This work was supported in part by AFOSR Grant F-49620-99-1-0289.

  20. Band offsets in c-Si/Si-XII heterojunctions

    NASA Astrophysics Data System (ADS)

    Mustafa, Jamal I.; Malone, Brad D.; Cohen, Marvin L.; Louie, Steven G.

    2014-08-01

    Silicon has a rich phase diagram with a multitude of phases existing over a wide range of pressures and temperatures, in addition to the common cubic silicon (c-Si) phase. One such phase, Si-XII, was first observed less than 2 decades ago in diamond anvil experiments, and more recently as a product of nanoindentation. In some of these latter experiments, I-V measurements were performed to characterize the c-Si/Si-XII interface that results when Si-XII is formed in cubic silicon substrates. In this paper we describe calculations of the band offsets in c-Si/Si-XII heterojunctions. We find that the heterojunction is of Type I and that the band offsets are estimated to be ΔEv=0.3 eV and ΔEc=0.5 eV for the valence bands and conduction bands, respectively.

  1. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    NASA Astrophysics Data System (ADS)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  2. Brazing SiC/SiC Composites to Metals

    NASA Technical Reports Server (NTRS)

    Steffier, Wayne S.

    2004-01-01

    Experiments have shown that active brazing alloys (ABAs) can be used to join SiC/SiC composite materials to metals, with bond strengths sufficient for some structural applications. The SiC/SiC composite coupons used in the experiments were made from polymerbased SiC fiber preforms that were chemical-vapor-infiltrated with SiC to form SiC matrices. Some of the metal coupons used in the experiments were made from 304 stainless steel; others were made from oxygen-free, high-conductivity copper. Three ABAs were chosen for the experiments: two were chosen randomly from among a number of ABAs that were on hand at the time; the third ABA was chosen because its titanium content (1.25 percent) is less than those of the other two ABAs (1.75 and 4.5 percent, respectively) and it was desired to evaluate the effect of reducing the titanium content, as described below. The characteristics of ABAs that are considered to be beneficial for the purpose of joining SiC/SiC to metal include wettability, reactivity, and adhesion to SiC-based ceramics. Prior to further development, it was verified that the three chosen ABAs have these characteristics. For each ABA, suitable vacuum brazing process conditions were established empirically by producing a series of (SiC/SiC)/ABA wetting samples. These samples were then sectioned and subjected to scanning electron microscopy (SEM) and energy-dispersive x-ray spectrometry (EDS) for analysis of their microstructures and compositions. Specimens for destructive mechanical tests were fabricated by brazing of lap joints between SiC/SiC coupons 1/8-in. (.3.2- mm) thick and, variously, stainless steel or copper tabs. The results of destructive mechanical tests and the SEM/EDS analysis were used to guide the development of a viable method of brazing the affected materials.

  3. Nanofabricated SiO{sub 2}-Si-SiO{sub 2} Resonant Tunneling Diodes

    SciTech Connect

    FLEMING,JAMES G.; CHOW,KAI-CHEUNG; LIN,SHAWN-YU

    2000-04-06

    Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very high-speed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. The authors report here the first demonstration of SiO{sub 2}-Si-SiO{sub 2} RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

  4. Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

    NASA Astrophysics Data System (ADS)

    Stepikhova, M. V.; Krasil'nikova, L. V.; Krasil'nik, Z. F.; Shengurov, V. G.; Chalkov, V. Yu.; Svetlov, S. P.; Zhigunov, D. M.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2006-02-01

    In this work we present the results of theoretical calculations and experimental studies carried out for Si/Si 1-XGe X: Er/Si heterostructures that show promise as the material for realizing a laser with Si: Er active medium. Analysis of the mode composition and estimation of the degree of electromagnetic wave localization in Si/Si 1-XGe X: Er/Si waveguide structures have been performed for a fairly wide range of values of the Si 1-XGe X: Er layer thickness and Ge content. It is shown that a method of sublimation molecular-beam epitaxy in germane gas atmosphere enables growing effective light-emitting structures of Si/Si 1-XGe X: Er/Si with the external quantum efficiency to 0.2%. The kinetics analysis of erbium photoluminescence, performed for the test structures, demonstrates the appearance of the population inversion of Er 3+ ion states under optical pumping. The number of Er ions in the inversely populated state comes to about 80% from the total concentration of optically active Er ions at the excitation power density of 4 W/cm 2.

  5. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

    SciTech Connect

    Li, L. B.; Chen, Z. M.; Zang, Y.

    2015-01-07

    The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

  6. Fabrication of lightweight Si/SiC LIDAR mirrors

    NASA Technical Reports Server (NTRS)

    Goela, Jitendra S.; Taylor, Raymond L.

    1991-01-01

    A new, chemical vapor deposition (CVD) process was developed for fabricating lightweight, polycrystalline silicon/silicon-carbide (Si/SiC) mirrors. The process involves three CVD steps: (1) to produce the mirror faceplate; (2) to form the lightweight backstructure, which is deposited integral to the faceplate; and (3) to deposit a layer of optical-grade material, e.g., Si, onto the front surface of the faceplate. The mirror figure and finish are fabricated into the faceplate.

  7. SiGe/Si Monolithically Integrated Amplifier Circuits

    NASA Technical Reports Server (NTRS)

    Katehi, Linda P. B.; Bhattacharya, Pallab

    1998-01-01

    With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

  8. Si1-XGex/Si-Heterojunction Internal-Photoemission Detectors

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Maserjian, Joseph

    1992-01-01

    Cutoff wavelengths tailored by choice of Ge content. Infrared detectors based on internal photoemission at Si1-xGex/Si heterojunctions exhibited photoresponses at wavelengths from 2 to 12 micrometers in initial tests. Si1-xGex/Si-heterojunction internal-photoemission detectors tailored for use at wavelengths of order of 10 micrometers. Future developments expected to include integration of such devices with silicon readout circuitry to form infrared-imaging arrays. Imaging arrays operating in important wavelength range of 8 to 12 micrometers can be fabricated relatively inexpensively for use in outer-space, military, and industrial applications.

  9. Role of the three Si suboxides at the surface of Si quantum dots and in Si/SiO2 quantum wells on optical response

    NASA Astrophysics Data System (ADS)

    Carrier, Pierre

    2009-03-01

    The Si/SiO2 interface structure has been extensively studied in the past, especially for MOSFET applications. Recent applications of Si/SiO2 nanostructures in solar cells and LEDs are now investigated using Si quantum dots (QD) or Si/SiO2 quantum wells (QW). The Si/SiO2 interface contains three Si suboxides, each bonded to 1, 2, or 3 oxygen atoms, respectively referred to as Si^1+, Si^2+, and Si^3+. Models that contain all three suboxides are difficult to construct; results in the literature on oxygenated Si QD usually include Si^1+ and Si^2+ only. The models presented here contain the 3 suboxides and are based on a Si/SiO2 surface model originally constructed by Pasquarello et al., Appl. Phys. Lett. 68, 625 (1996). This model was used later by the author in the study of Si/SiO2 QW [Phys. Rev. B 65, 165339 (2002)] and is now extended to Si QD. It is shown that the band gap or optical response depends strongly on the Si suboxide atomic configuration at the surface of QD or at the interface of QW. Trends on the band gap variations as function of the three suboxides will be discussed. All models (QW and QD) are structurally relaxed using the program PARSEC [Phys. Rev. Lett. 72, 1240 (1994)].

  10. Methods of radiation effects evaluation of SiC/SiC composite and SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. Several methods for radiation effects evaluation of SiC fibers and fiber-reinforced SiC/SiC composite are presented.

  11. Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiNx films as emitters

    PubMed Central

    2013-01-01

    Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiNx (Si-NCs/SiNx) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron cyclotron resonance chemical vapor deposition. We investigate the influence of the N/Si ratio in the Si-NCs/SiNx films on their electrical and optical properties, as well as the photovoltaic properties of the fabricated heterojunction devices. Increasing the nitrogen content enhances the optical gap E04 while deteriorating the electrical conductivity of the Si-NCs/SiNx film, leading to an increased short-circuit current density and a decreased fill factor of the heterojunction device. These trends could be interpreted by a bi-phase model which describes the Si-NCs/SiNx film as a mixture of a high-transparency SiNx phase and a low-resistivity Si-NC phase. A preliminary efficiency of 8.6% is achieved for the Si-NCs/sc-Si heterojunction solar cell. PMID:24188725

  12. Joining of SiC ceramics and SiC/SiC composites

    SciTech Connect

    Rabin, B.H.

    1995-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method has the potential to facilitate the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent efforts have focused on transferring the joining technology to industry. Several industrial partners have been identified and collaborative research projects are in progress. Investigations are focusing on applying the joining method to sintered a-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  13. Joining of SiC ceramics and SiC/SiC composites

    SciTech Connect

    Rabin, B.H.

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  14. Diffusion of Si in thin CoSi2 layers

    NASA Technical Reports Server (NTRS)

    Schowengerdt, F. D.; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Evidence of silicon diffusion in 100-A CoSi2 layers grown by room-temperature codeposition and annealing on Si(111) substrates was from Auger peak height ratios, which were interpreted in terms of a Si overlayer. It was found that this layer could be removed by chemical etching and reformed by subsequent annealing. By measuring the intensity of the plasmon energy loss peak associated with the CoL23 VV Auger peak, the effective thickness of the Si overlayer was measured as a function of annealing temperature, by calibrating the plasmon loss data against known overlayer thicknesses on unannealed samples. Similar results were found for samples grown both with and without the addition of a 10-A Si cap to prevent pinhole formation in the CoSi2; moreover, Si diffusion was also observed at temperatures well below the point where pinhole formation is first found, suggesting that Si diffusion does not depend on the presence of observable pinholes.

  15. SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4)

    NASA Astrophysics Data System (ADS)

    Rana, Tawhid; Chandrashekhar, M. V. S.; Daniels, Kevin; Sudarshan, Tangali

    2016-04-01

    Tetrafluorosilane (SiF4 or TFS), a novel precursor gas, has been demonstrated to perform three primary operations of silicon carbide-related processing: SiC etching, SiC epitaxial growth and graphene epitaxial growth. TFS etches SiC substrate vigorously in a H2 ambient by efficient Si removal from the surface, where SiC etch rate is a function of TFS gas concentration. In this SiC etching process, Si is removed by TFS and C is removed by H2. When propane is added to a H2 and TFS gas mixture, etching is halted and high-quality SiC epitaxy takes place in a Si droplet-free condition. TFS's ability to remove Si can also be exploited to grow epitaxial graphene in a controllable manner in an inert (Ar) ambient. Here, TFS enhances graphene growth by selective etching of Si from the SiC surface.

  16. MoSi2-Base Composites

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.

    2003-01-01

    Addition of 30 to 50 vol% of Si3N4 particulate to MoSi2 eliminated its low temperature catastrophic failure, improved room temperature fracture toughness and the creep resistance. The hybrid composite SCS-6/MoSi2-Si3N4 did not show any matrix cracking and exhibited excellent mechanical and environmental properties. Hi-Nicalon continuous fiber reinforced MoSi2-Si3N4 also showed good strength and toughness. A new MoSi2-base composite containing in-situ whisker-type (Beta)Si3N4 grains in a MoSi2 matrix is also described.

  17. Using SI Units in Mechanics.

    ERIC Educational Resources Information Center

    Meriam, J. L.

    This paper provides an historical account of the development of the International System of Units (SI), a complete listing of these units, and rules concerning their use and proper abbreviation. Ambiguities concerning the use of the system are explained. Appendices contain conversion factors for U.S. - British to SI units along with several…

  18. Hermetic SiC-SiC composite tubes

    SciTech Connect

    Kowbel, W.; Liu, Y.; Bruce, C.; Withers, J.C.; Kolaya, L.E.; Lewis, N.

    1998-12-31

    SiC-SiC composites have good potential for structural applications but are limited by expensive forming techniques. A high purity {beta}-SiC fiber produced by MER, and a polymer derived SiC matrix were used to fabricate small diameter hermetic SiC-SiC tubes. The process was optimized to prevent the formation of a brittle structure while rapidly forming a dense matrix. This tube was made hermetic by first coating the surface of the tube with a silicon carbide particle filled polymer slurry, followed by a Chemical Vapor Infiltration/Deposition (CVI/CVD) SiC deposition which was performed to close any residual porosity on the composite tube surface. X-ray diffraction and Transmission Electron Microscopy (TEM) examination was performed to determine the fiber and matrix structures. These tubes were found to be impermeable to helium with leak rates below 10{sup {minus}9} cc/sec as determined by testing similar to MIL-STD-883D, method 1014.10. This high level of impermeability was sustained following thermal cycling between room temperature and 1,520 C.

  19. Mechanics of patterned helical Si springs on Si substrate.

    PubMed

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  20. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

    NASA Astrophysics Data System (ADS)

    Moustafa Bouzaki, Mohammed; Aillerie, Michel; Ould Saad Hamady, Sidi; Chadel, Meriem; Benyoucef, Boumediene

    2016-10-01

    We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μm which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

  1. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl2/Si powder source

    NASA Astrophysics Data System (ADS)

    Meng, Erchao; Ueki, Akiko; Meng, Xiang; Suzuki, Hiroaki; Itahara, Hiroshi; Tatsuoka, Hirokazu

    2016-08-01

    Si nanosheets connected to Si nanowires were synthesized using a MnCl2/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH4 or SiCl4. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  2. Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces

    NASA Astrophysics Data System (ADS)

    Kim, Geun-Myeong; Oh, Young Jun; Lee, Chang Hwi; Chang, K. J.

    2014-03-01

    In metal-oxide-semiconductor field effect transistors (MOSFETs) it is known that implanted B dopants easily segregate to the oxide during thermal annealing after ion implantation, causing threshold voltage shift and sheet resistance increase. On the other hand, SiGe alloys have been considered as a promising material for p-type MOSFETs due to reduced B diffusion and high hole mobility. However, there is a lack of studies for B diffusion in Si/SiO2 and SiGe/SiO2 interfaces. In this work, we perform first-principles density functional calculations to study the mechanism for the B diffusion in Si/SiO2 and SiGe/SiO2 interfaces. We investigate the diffusion pathways and migration barriers by using the climbing nudged elastic band and dimer methods. For Si/SiO2 interface, B in Si turns into an interstitial B and tends to intervene between the Si and bridge O atoms at the interface. The overall migration barrier is calculated to be about 2 eV, comparable to that in bulk SiO2. In SiGe/SiO2, interface Ge atoms enhance the stability of B-related defects in the interface region, resulting in the higher migration barrier of about 3.7 eV. Our results indicate that Si/SiO2 interface does not hinder the B diffusion, however, the B diffusion is suppressed in the presence of interface Ge atoms.

  3. Epitaxial growth of Si deposited on (100) Si

    NASA Astrophysics Data System (ADS)

    Hung, L. S.; Lau, S. S.; von Allmen, M.; Mayer, J. W.; Ullrich, B. M.; Baker, J. E.; Williams, P.; Tseng, W. F.

    1980-11-01

    Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (˜50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (˜2 Å/sec) deposition, epitaxial growth rates are significantly slower.

  4. Si Isotopes of Brownleeite

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Messenger, Scott R.; Ito, M.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Tatsuoka, H.; Zolensky, M. E.; Tatsuoka, H.

    2010-01-01

    Brownleeite is a manganese silicide, ideally stoichiometric MnSi, not previously observed in nature until its discovery within an interplanetary dust particle (IDP) that likely originated from a comet [1]. Three discrete brownleeite grains in the IDP L2055 I3 (4 microns in size, hereafter IDP I3) were identified with maximum dimensions of 100, 250 and 600 nm and fully analyzed using scanning-transmission electron microscopy (STEM) [1]. One of the grains (100 nm in size) was poikilitically enclosed by low-Fe, Mn-enriched (LIME) olivine. LIME olivine is epitaxial to the brownleeite with the brownleeite (200) parallel to the olivine c* [1]. LIME olivine is an enigmatic phase first reported from chondritic porous IDPs and some unequilibrated ordinary chondrites [ 2], that is commonly observed in chondritic-porous IDPs. Recently, LIME olivine has been also found in comet Wild-2 (Stardust) samples [3], indicating that LIME olivine is a common mineral component of comets. LIME olivine has been proposed to form as a high temperature condensate in the protosolar nebula [2]. Brownleeite grains also likely formed as high-temperature condensates either in the early Solar System or in the outflow of an evolved star or supernova explosion [1]. The isotopic composition of the brownleeite grains may strongly constrain their ultimate source. To test this hypothesis, we performed isotopic analyses of the brownleeite and the associated LIME olivine, using the NASA/JSC NanoSIMS 50L ion microprobe.

  5. Epitaxial orientation of Mg{sub 2}Si(110) thin film on Si(111) substrate

    SciTech Connect

    Wang, Y.; Wang, X. N.; Mei, Z. X.; Du, X. L.; Zou, J.; Jia, J. F.; Xue, Q. K.; Zhang, X. N.; Zhang, Z.

    2007-12-15

    Epitaxial Mg{sub 2}Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111) parallel Mg{sub 2}Si(110) and Si<110> parallel Mg{sub 2}Si<110> has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg{sub 2}Si film in a MgO/Mg{sub 2}Si/Si double heterostructure.

  6. Luminescence of Degraded Si-SiO2 Structures

    NASA Astrophysics Data System (ADS)

    Baraban, A. P.; Dmitriev, V. A.; Gadzhala, A. A.

    2014-09-01

    Possibilities of using electroluminescence (EL) and cathodoluminescence (CL) in the spectral range 250-800 nm to investigate physical-chemical processes taking place in Si-SiO2 structures as a result of extreme external actions (strong electric fields or γ-radiation) are considered. It is found that degradation processes along with changes in the electrophysical characteristics of Si-SiO2 structures are revealed in changes in the luminescence spectra, especially in the red region. The similarity of the changes in the CL and EL spectra of Si-SiO2 structures exposed to field and radiation points to a similarity in the processes taking place during degradation, which is confirmed by the qualitative similarity of the changes in the charge characteristics. The near-invariance of the spectral composition of the luminescence is an indication that the processes taking place during degradation do not lead to the formation of new luminescence centers, but modify the concentration of already existing biographical defects. This is evidence of the existence of a direct link between resistance to degradation and the technology of formation of the oxide layer on the silicon surface.

  7. Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

    NASA Technical Reports Server (NTRS)

    Lightfoot, A.; Sheldon, B. W.; Flint, J. H.; Haggerty, J. S.

    1989-01-01

    The nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.

  8. High Temperature Si-doped BN Interphases for Woven SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Hurwitz, Frances; Yun, Hee Mann; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    The hydrolytic stability of high-temperature deposited Si-doped BN has been shown in the past to be superior in comparison to "pure" BN processed at similar or even higher temperatures. This type of material would be very desirable as a SiC/SiC composite interphase that is formed by chemical infiltration into multi-ply woven preform. However, due to rapid deposition on the preform outer surface at the high processing temperature, this has proven very difficult. To overcome this issue, single plies of woven fabric were infiltrated with Si-doped BN. Three composite panels of different SiC fiber types were fabricated with Si-doped BN interphases including Sylramic, Hi-Nicalon Type S and Sylramic-iBN fiber-types. The latter fiber-type possesses a thin in-situ grown BN layer on the fiber surface. High Si contents (approx. 7 to 10 a/o) and low oxygen contents (less than 1 a/o) were achieved. All three composite systems demonstrated reasonable debonding and sliding properties. The coated Sylramic fabric and composites were weak due to fiber degradation apparently caused during interphase processing by the formation of TiN crystals on the fiber surface. The Hi-Nicalon Type S composites with Si-doped BN interphase were only slightly weaker than Hi-Nicalon Type S composites with conventional BN when the strength on the load-bearing fibers at failure was compared. On the other hand, the Sylramic-iBN fabric and composites with Si-doped BN showed excellent composite and intermediate temperature stress-rupture properties. Most impressive was the lack of any significant interphase oxidation on the fracture surface of stress-ruptured specimens tested well above matrix cracking at 815C.

  9. Ab initio chemical kinetics for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 under a-Si/H CVD conditions.

    PubMed

    Raghunath, P; Lin, M C

    2013-10-24

    The kinetics and mechanisms for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 have been investigated by ab initio molecular orbital theory based on the QCISD(T)/CBS//QCISD/6-311++G(d,p) method in conjunction with quantum statistical variational Rice-Ramsperger-Kassel-Marcus (RRKM) calculations. For the barrierless radical association processes, their variational transition states have been characterized by the CASPT2//CASSCF method. The species involved in the study are known to coexist under CVD conditions. The results show that the association reaction of SiH2 and Si2H6 producing Si3H8 occurs by insertion via its lowest-energy path forming a loose hydrogen-bonding molecular complex with 8.3 kcal/mol binding energy; the reaction is exothermic by 55.0 kcal/mol. The chemically activated Si3H8 adduct can fragment by several paths, producing SiH4 + SiH3SiH (-0.7 kcal/mol), Si(SiH3)2 + H2 (-1.4 kcal/mol), and SiH3SiH2SiH + H2 (-1.4 kcal/mol). The predicted enthalpy changes as given agree well with available thermochemical data. Three other decomposition channels of Si3H8 occurring by Si-H or Si-Si breaking were found to be highly endothermic, and the reactions take place without a well-defined barrier. The heats of formation of Si3H8, SiH2SiH, Si2H4, i-Si3H7, n-Si3H7, Si(SiH3)2, and SiH3SiH2SiH have been predicted and found to be in close agreement with those available data in the literature. The product branching rate constants for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the thermal unimolecular decomposition of Si3H8 for all low-energy paths have been calculated with multichannel variational RRKM theory covering varying P,T conditions typically employed in PECVD and Cat-CVD processes for hydrogenated amorphous silicon (a-Si/H) film growth. The results were also found to be in good agreement with available kinetic data. Our kinetic results may be employed to model and control very large-area a-Si/H film growth for a

  10. Graphene-Si heterogeneous nanotechnology

    NASA Astrophysics Data System (ADS)

    Akinwande, Deji; Tao, Li

    2013-05-01

    It is widely envisioned that graphene, an atomic sheet of carbon that has generated very broad interest has the largest prospects for flexible smart systems and for integrated graphene-silicon (G-Si) heterogeneous very large-scale integrated (VLSI) nanoelectronics. In this work, we focus on the latter and elucidate the research progress that has been achieved for integration of graphene with Si-CMOS including: wafer-scale graphene growth by chemical vapor deposition on Cu/SiO2/Si substrates, wafer-scale graphene transfer that afforded the fabrication of over 10,000 devices, wafer-scalable mitigation strategies to restore graphene's device characteristics via fluoropolymer interaction, and demonstrations of graphene integrated with commercial Si- CMOS chips for hybrid nanoelectronics and sensors. Metrology at the wafer-scale has led to the development of custom Raman processing software (GRISP) now available on the nanohub portal. The metrology reveals that graphene grown on 4-in substrates have monolayer quality comparable to exfoliated flakes. At room temperature, the high-performance passivated graphene devices on SiO2/Si can afford average mobilities 3000cm2/V-s and gate modulation that exceeds an order of magnitude. The latest growth research has yielded graphene with high mobilities greater than 10,000cm2/V-s on oxidized silicon. Further progress requires track compatible graphene-Si integration via wafer bonding in order to translate graphene research from basic to applied research in commercial R and D laboratories to ultimately yield a viable nanotechnology.

  11. Ionic S(N)i-Si Nucleophilic Substitution in N-Methylaniline-Induced Si-Si Bond Cleavages of Si2Cl6.

    PubMed

    Zhang, Jie; Xie, Ju; Lee, Myong Euy; Zhang, Lin; Zuo, Yujing; Feng, Shengyu

    2016-03-24

    N-Methylaniline-induced Si-Si bond cleavage of Si2Cl6 has been theoretically studied. All calculations were performed by using DFT at the MPWB1K/6-311++G(3df,2p)//MPWB1K/6-31+G(d,p) levels. An ionic SN i-Si nucleophilic substitution mechanism, which is a newly found nucleophilic substitution in silicon-containing compounds, is proposed in the N-methylaniline-induced Si-Si bond cleavage in Si2Cl6. Unlike general S(N)i-Si nucleophilic substitutions that go through a pentacoordinated silicon transition state, ionic nucleophilic substitution goes through a tetracoordinated silicon transition state, in which the Si-Si bond is broken and siliconium ions are formed. Special cleavage of the Si-Si bond is presumably due to the good bonding strength between Si and N atoms, which leads to polarization of the Si-Si bond and eventually to heterolytic cleavage. Calculation results show that, in excess N-methylaniline, the final products of the reaction, including (NMePh)(3-n) SiHCl(n) (n=0-2) and (NMePh)(4-n) SiCl(n) (n=2-3), are the Si-Si cleavage products of Si2Cl6 and the corresponding amination products of the former. The ionic S(N)i-Si nucleophilic substitution mechanism can also be employed to describe the amination of chlorosilane by N-methylaniline. The suggested mechanisms are consistent with experimental data.

  12. Improving Thermomechanical Properties of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.; Bhatt, Ramakrishna T.

    2006-01-01

    Today, a major thrust toward improving the thermomechanical properties of engine components lies in the development of fiber-reinforced silicon carbide matrix composite materials, including SiC-fiber/SiC-matrix composites. These materials are lighter in weight and capable of withstanding higher temperatures, relative to state-of-the-art metallic alloys and oxide-matrix composites for which maximum use temperatures are in the vicinity of 1,100 C. In addition, the toughness or damage tolerance of the SiC-matrix composites is significantly greater than that of unreinforced silicon-based monolithic ceramics. For successful application in advanced engine systems, the SiC-matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetimes. Inasmuch as the high-temperature structural lives of ceramic materials are typically limited by creep-induced growth of flaws, a key property required of such composite materials is high resistance to creep under conditions of use. Also, the thermal conductivity of the materials should be as high as possible so as to minimize component thermal gradients and thermal stresses. A state-of-the-art SiC-matrix composite is typically fabricated in a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by thermally stable high-performance fibers, (2) chemical-vapor infiltration (CVI) of a fiber-coating material such as boron nitride (BN) into the preform, and (3) infiltration of an SiC-based matrix into the remaining porosity in the preform. Generally, the matrices of the highest-performing composites are fabricated by initial use of a CVI SiC matrix component that is typically more thermally stable and denser than matrix components formed by processes other than CVI. As such, the initial SiC matrix component made by CVI provides better environmental protection to the coated fibers embedded within it. Also, the denser CVI SiC imparts to the

  13. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

    PubMed

    Li, Jiehua; Hage, Fredrik S; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-04-28

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP 'patch' dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption.

  14. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

    PubMed

    Li, Jiehua; Hage, Fredrik S; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-01-01

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP 'patch' dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption. PMID:27120994

  15. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys

    PubMed Central

    Li, Jiehua; Hage, Fredrik S.; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-01-01

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP ‘patch’ dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption. PMID:27120994

  16. Thermodynamics of Si-C-O system

    NASA Technical Reports Server (NTRS)

    Jacobson, N. S.; Opila, E. J.

    1993-01-01

    The Si-C-O predominance diagram, in conjunction with a free-energy minimum of the gas phase, has been used to explain several observations in the reactions of SiC and/or carbon with SiO2. In the predominance diagram, the axes are chosen as the primary activity units for carbon and oxygen. The predominance diagram shows only the stable condensed phases SiO2, SiC, carbon, and silicon. It also shows the isobars for SiO(g) and CO(g), which are the primary gas-phase species. Only the thermodynamics of the system is considered. The observations explained include the general adjustment of carbon-rich SiC to a free-energy minimum on the SiC/SiO2 coexistence line and the inability to form free silicon from SiO2 and carbon, except at very high temperatures.

  17. Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO{sub 2} interfaces and their incorporation into SiO{sub 2}

    SciTech Connect

    Takahashi, Norihiko; Yamasaki, Takahiro; Kaneta, Chioko

    2014-06-14

    Dynamics of Si(100)-oxidation processes at the Si/SiO{sub 2} interface and in the SiO{sub 2} region are investigated focusing on SiO and Si emissions from the interface and the following incorporation into the SiO{sub 2} and/or substrate. Classical molecular dynamics (MD) simulations with variable charge interatomic potentials are performed to clarify these atomic processes. By incorporating oxygen atoms, two-folded Si atoms are formed after structural relaxation at the interface and are emitted as SiO molecules into SiO{sub 2}. The energy barrier of the SiO emission is estimated to be 1.20 eV on the basis of the enthalpy change in an MD simulation. The emitted SiO molecule is incorporated into the SiO{sub 2} network through a Si-O rebonding process with generating an oxygen vacancy. The energy barrier of the SiO incorporation is estimated to be 0.79–0.81 eV. The elementary process of oxygen vacancy diffusion leading to the complete SiO incorporation is also simulated, and the energy barriers are found to be relatively small, 0.71–0.79 eV. The energy changes of Si emissions into the substrate and SiO{sub 2} are estimated to be 2.97–7.81 eV, which are larger than the energy barrier of the SiO emission. This result suggests that, at the ideally flat Si/SiO{sub 2} interface, the SiO emission into the SiO{sub 2} region occurs prior to the Si emission, which is consistent with previous theoretical and experimental studies. The above mentioned typical atomic processes are successfully extracted from some (or one) of MD simulations among many trials in which a statistical procedure is partly employed. Our results give a unified understanding of Si oxidation processes from an atomistic point of view.

  18. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    NASA Astrophysics Data System (ADS)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  19. Selective Growth of Nanocrystalline 3C-SiC Thin Films on Si

    NASA Astrophysics Data System (ADS)

    Beke, D.; Pongrácz, A.; Battistig, G.; Josepovits, K.; Pécz, B.

    2010-11-01

    Epitaxial formation of SiC nanocrystals has been investigated on single crystal silicon surfaces. A simple and cheap method using reactive annealing in CO has been developed and patented by our group (BME AFT and MTA MFA). By this technique epitaxial 3C-SiC nanocrystals can be grown at the Si side of a SiO2/Si interface without void formation at the SiC/Si interface. CO diffusion and SiC nanocrystal formation on different silicon based systems (SiO2/Si, Si3N4/3Si and SiO2/LPCVD poly-Si) after CO treatment at 105 Pa at elevated temperatures (T>1000° C) will be presented. By optimizing the annealing time a thin continuous nanocrystalline SiC layer has been formed. Applying a patterned Si3N4 capping layer as a barrier layer against CO diffusion, SiC nanocrystal formation at the Si3N4/Si interface is inhibited. We will present the selective growth of SiC nanocrystals using the before mentioned technique.

  20. A model for Si, SiCH, SiO{sub 2}, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer

    SciTech Connect

    Raballand, V.; Cartry, G.; Cardinaud, C.

    2007-09-15

    In a previous paper we showed that selective etching of porous SiOCH with respect to SiO{sub 2} and SiCH is clearly enhanced when using a pulsed bias in inductively coupled fluorocarbon plasma. To understand this pulsed process, a model for etch rate calculation is developed in the present paper. This model explains the etching/deposition threshold shift toward higher bias voltage in pulsed conditions. Rather good confidence is obtained with experimental SiO{sub 2}, Si, SiOCH and SiCH etch rates. Porous SiOCH etching is found to behave slightly differently compared to SiO{sub 2} or SiCH; its chemical etching is assumed to occur even during the beginning of off period. This point could explain why good selectivities between porous SiOCH and SiO{sub 2} and SiCH are obtained.

  1. Recent Progress of SiC-Fibers and SiC/SiC-Composites for Fusion Applications

    NASA Astrophysics Data System (ADS)

    Noda, T.; Kohyama, A.; Katoh, Y.

    Recent progress in R&D of SiC fibers and reinforced SiC matrix (SiC/SiC) composites in Japan, especially focusing on the activities of CREST-ACE program, is presented. Firstly, the present status of high performance SiC fiber development, such as Hi-Nicalon Type-S and Tyrano-SA, is provided. The high performance SiC matrix production by reaction sintering (RS) method improved in both strength and thermal conductivity are accomplished. The efforts to make appropriate fiber-matrix interfacial microstructure by CVI and PIP methods have been successful, resulting in the production of high strength and high fracture toughness SiC/SiC composites. Several joining processes using PIP, RS and mechanical fastener for composites are introduced. Dimensional stability under radiation damage has been studied by neutron and charged particle irradiation. The SiC/SiC composites prepared with Type-S SiC fiber with a stoichiometric composition did not exhibit mechanical property degradation. Based on the development of SiC composites, test module concepts to verify the advanced fluid systems including SiC/SiC/Be/He coolant blanket are presented.

  2. Mo-Si alloy development

    SciTech Connect

    Liu, C.T.; Heatherly, L.; Wright, J.L.

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  3. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    SciTech Connect

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing.

  4. Atomic-scale structure of SiO2/Si interface formed by furnace oxidation

    NASA Astrophysics Data System (ADS)

    Miyata, Noriyuki; Watanabe, Heiji; Ichikawa, Masakazu

    1998-11-01

    SiO2/Si interfaces formed by furnace oxidation are investigated by scanning reflection electron microscopy (SREM). SREM observations reveal that the initial atomic steps on the Si(111)-7×7 and Si(001)-2×1 surfaces are preserved at the SiO2/Si interfaces and the interfacial atomic steps do not move laterally during furnace oxidation. A profile analysis of reflection high-energy electron diffraction indicates that the atomic-scale roughness at the SiO2/Si interfaces is formed by furnace oxidation. The respective SiO2/Si(111) and SiO2/Si(001) interfaces are made up of about 5- and 3-nm-diam islands. Our results indicate that the layer-by-layer oxidation caused by two-dimensional island nucleation progresses during furnace oxidation.

  5. On the structure and chemical bonding of Si62- and Si62- in NaSi6- upon Na+ coordination

    NASA Astrophysics Data System (ADS)

    Zubarev, Dmitry Yu.; Alexandrova, Anastassia N.; Boldyrev, Alexander I.; Cui, Li-Feng; Li, Xi; Wang, Lai-Sheng

    2006-03-01

    Photoelectron spectroscopy was combined with ab initio calculations to elucidate the structure and bonding in Si62- and NaSi6-. Well-resolved electronic transitions were observed in the photoelectron spectra of Si6- and NaSi6- at three photon energies (355, 266, and 193nm). The spectra of NaSi6- were observed to be similar to those of Si6- except that the electron binding energies of the former are lower, suggesting that the Si6 motif in NaSi6- is structurally and electronically similar to that in Si6-. The electron affinities of Si6 and NaSi6 were measured fairly accurately to be 2.23±0.03eV and 1.80±0.05eV, respectively. Global minimum structure searches for Si62- and NaSi6- were performed using gradient embedded genetic algorithm followed by B3LYP, MP2, and CCSD(T) calculations. Vertical electron detachment energies were calculated for the lowest Si6- and NaSi6- structures at the CCSD(T)/6-311+G(2df ), ROVGF/6-311+G(2df), UOVGF/6-311+G(2d), and time-dependent B3LYP/6-311+G(2df) levels of theory. Experimental vertical detachment energies were used to verify the global minimum structure for NaSi6-. Though the octahedral Si62-, analogous to the closo form of borane B6H62-, is the most stable form for the bare hexasilicon dianion, it is not the kernel for the NaSi6- global minimum. The most stable isomer of NaSi6- is based on a Si62- motif, which is distorted into C2v symmetry similar to the ground state structure of Si6-. The octahedral Si62- coordinated by a Na+ is a low-lying isomer and was also observed experimentally. The chemical bonding in Si62- and NaSi6- was understood using natural bond orbital, molecular orbital, and electron localization function analyses.

  6. Comparison of low frequency charge noise in identically patterned Si/SiO2 and Si/SiGe quantum dots

    NASA Astrophysics Data System (ADS)

    Freeman, Blake M.; Schoenfield, Joshua S.; Jiang, HongWen

    2016-06-01

    We investigate and compare the charge noise in Si/SiO2 and Si/SiGe gate defined quantum dots with identically patterned gates by measuring the low frequency 1/f current noise through the biased quantum dots in the coulomb blockade regime. The current noise is normalized and used to extract a measurement of the potential energy noise in the system. Additionally, the temperature dependence of this noise is investigated. The measured charge noise in Si/SiO2 compares favorably with that of the SiGe device as well as previous measurements made on other substrates suggesting Si/SiO2 is a potential candidate for spin based quantum computing.

  7. Structural characterization of annealed Si{sub 1-x}C{sub x}/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

    SciTech Connect

    Song Dengyuan; Cho, Eun-Chel; Conibeer, Gavin; Huang Yidan; Flynn, Chris; Green, Martin A.

    2008-04-15

    Amorphous Si{sub 1-x}C{sub x}/SiC multilayer films were prepared by alternating deposition of Si-rich Si{sub 1-x}C{sub x} and near-stoichiometric SiC layers by using magnetron sputtering. The as-deposited films were annealed at different temperatures (T{sub a}) from 800 to 1100 deg. C. The influence of T{sub a} and Si content in the Si-rich layer on the layered structural stability and on the formation of Si and/or SiC nanocrystals (NCs) is investigated by a variety of analytical techniques, including x-ray reflectivity (XRR), x-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectrometry (FTIR). XRR showed that Si{sub 1-x}C{sub x}/SiC multilayers annealed at temperatures of up to 800 deg. C retain their layered structure. XRD revealed that Si NCs were formed in samples with a high Si content in the Si-rich layer for T{sub a}{>=}800 deg. C. At annealing temperatures of 900 deg. C or greater, the formation of Si NCs was accompanied by the formation of {beta}-SiC NCs. Additionally, the formation of Si and SiC NCs was confirmed by TEM imaging and Raman spectroscopy. The Si-NC size obtained from the TEM micrographs is within the range of 3-5 nm. The {beta}-SiC NCs are smaller (2-3 nm) than Si NCs. Raman analysis identified an {approx}9 cm{sup -1} Raman peak shift in the Si-NC peak to a lower energy with respect to that for bulk Si. FTIR Si-C bond absorption spectra exhibited narrowing of the full width at half maximum and a peak shift toward a higher wave number with increasing T{sub a}. This behavior can be explained by an increase in order as well as an increase in the number of Si-C bonds.

  8. Ab initio and kinetic Monte Carlo study of lithium diffusion in LiSi, Li12Si7, Li13Si5 and Li15Si4

    NASA Astrophysics Data System (ADS)

    Moon, Janghyuk; Lee, Byeongchan; Cho, Maenghyo; Cho, Kyeongjae

    2016-10-01

    The kinetics of lithium atoms in various Li-Si binary compounds are investigated using density functional theory calculations and kinetic Monte Carlo calculations. The values of the Li migration energy barriers are identified by NEB calculations with vacancy-mediated, interstitial and exchange migration mechanisms in crystalline LiSi, Li12Si7, Li13Si4, and Li15Si4. A comparison of these NEB results shows that the vacancy-mediated Li migration is identified as the dominant diffusion mechanisms in Li-Si compounds. The diffusion coefficients of Li in Li-Si compounds at room temperature are determined by KMC simulation. From the KMC results, the recalculated migration energy barriers in LiSi, Li12Si7, Li13Si4, and Li15Si4 correspond to 0.306, 0.301, 0.367 and 0.320 eV, respectively. Compared to the Li migration energy barrier of 0.6 eV in crystalline Si, the drastic reduction in the Li migration energy barriers in the lithiated silicon indicates that the initial lithiation of the Si anode is the rate-limiting step. Furthermore, it is also found that Si migration is possible in Li-rich configurations. On the basis of these findings, the underlying mechanisms of kinetics on the atomic scale details are elucidated.

  9. Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, Jin S.; Lin, True-Lon; Jones, Eric; Del Castillo, Hector; Gunapala, Sarath

    1996-01-01

    Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

  10. Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

    NASA Astrophysics Data System (ADS)

    Morita, Yukinori; Fukuda, Koichi; Mori, Takahiro; Mizubayashi, Wataru; Migita, Shinji; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Matsukawa, Takashi; Ota, Hiroyuki

    2016-04-01

    A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a heavily doped Si source as a tunnel junction. A FinFET-like hetero-multilayer channel with a trigate configuration significantly increases the drain current compared with conventional SiGe/Si heterojunction parallel-plate tunnel FETs.

  11. Morphology Analysis of Si Island Arrays on Si(001)

    PubMed Central

    2010-01-01

    The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent reports have shown that self-assembled distributions of fourfold pyramid-like islands develop in 5-nm thick Si layers grown at substrate temperatures of 650 and 750°C on HF-prepared Si(001) substrates. Looking for wielding control and understanding the phenomena involved in this surface nanostructuring, we develop and apply a formalism that allows for processing large area AFM topographic images in a shot, obtaining surface orientation maps with specific information on facets population. The procedure reveals some noticeable features of these Si island arrays, e.g. a clear anisotropy of the in-plane local slope distributions. Total island volume analysis also indicates mass transport from the substrate surface to the 3D islands, a process presumably related to the presence of trenches around some of the pyramids. Results are discussed within the framework of similar island arrays in homoepitaxial and heteroepitaxial semiconductor systems. PMID:21170139

  12. Structures and relative stability of medium- and large-sized silicon clusters. VI. Fullerene cage motifs for low-lying clusters Si39, Si40, Si50, Si60, Si70, and Si80

    NASA Astrophysics Data System (ADS)

    Yoo, Soohaeng; Shao, N.; Zeng, X. C.

    2008-03-01

    We performed a constrained search, combined with density-functional theory optimization, of low-energy geometric structures of silicon clusters Si39, Si40, Si50, Si60, Si70, and Si80. We used fullerene cages as structural motifs to construct initial configurations of endohedral fullerene structures. For Si39, we examined six endohedral fullerene structures using all six homolog C34 fullerene isomers as cage motifs. We found that the Si39 constructed based on the C34(Cs:2) cage motif results in a new leading candidate for the lowest-energy structure whose energy is appreciably lower than that of the previously reported leading candidate obtained based on unbiased searches (combined with tight-binding optimization). The C34(Cs:2) cage motif also leads to a new candidate for the lowest-energy structure of Si40 whose energy is notably lower than that of the previously reported leading candidate with outer cage homolog to the C34(C1:1). Low-lying structures of larger silicon clusters Si50 and Si60 are also obtained on the basis of preconstructed endohedral fullerene structures. For Si50, Si60, and Si80, the obtained low-energy structures are all notably lower in energy than the lowest-energy silicon structures obtained based on an unbiased search with the empirical Stillinger-Weber potential of silicon. Additionally, we found that the binding energy per atom (or cohesive energy) increases typically >10meV with addition of every ten Si atoms. This result may be used as an empirical criterion (or the minimal requirement) to identify low-lying silicon clusters with size larger than Si50.

  13. Structures and relative stability of medium- and large-sized silicon clusters. VI. Fullerene cage motifs for low-lying clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80).

    PubMed

    Yoo, Soohaeng; Shao, N; Zeng, X C

    2008-03-14

    We performed a constrained search, combined with density-functional theory optimization, of low-energy geometric structures of silicon clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80). We used fullerene cages as structural motifs to construct initial configurations of endohedral fullerene structures. For Si(39), we examined six endohedral fullerene structures using all six homolog C(34) fullerene isomers as cage motifs. We found that the Si(39) constructed based on the C(34)(C(s):2) cage motif results in a new leading candidate for the lowest-energy structure whose energy is appreciably lower than that of the previously reported leading candidate obtained based on unbiased searches (combined with tight-binding optimization). The C(34)(C(s):2) cage motif also leads to a new candidate for the lowest-energy structure of Si(40) whose energy is notably lower than that of the previously reported leading candidate with outer cage homolog to the C(34)(C(1):1). Low-lying structures of larger silicon clusters Si(50) and Si(60) are also obtained on the basis of preconstructed endohedral fullerene structures. For Si(50), Si(60), and Si(80), the obtained low-energy structures are all notably lower in energy than the lowest-energy silicon structures obtained based on an unbiased search with the empirical Stillinger-Weber potential of silicon. Additionally, we found that the binding energy per atom (or cohesive energy) increases typically >10 meV with addition of every ten Si atoms. This result may be used as an empirical criterion (or the minimal requirement) to identify low-lying silicon clusters with size larger than Si(50).

  14. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Tian, Y.L.

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  15. Atractylenolide I-mediated Notch pathway inhibition attenuates gastric cancer stem cell traits

    SciTech Connect

    Ma, Li; Mao, Rurong; Shen, Ke; Zheng, Yuanhong; Li, Yueqi; Liu, Jianwen; Ni, Lei

    2014-07-18

    Highlights: • This paper supports the anti-tumor effects of AT-I on gastric cancer in vitro. • AT-I attenuates gastric cancer stem cell traits. • It is the systematic study regarding AT-I suppression of Notch pathway in GC and GCSLCs. - Abstract: Atractylenolide I (AT-I), one of the main naturally occurring compounds of Rhizoma Atractylodis Macrocephalae, has remarkable anti-cancer effects on various cancers. However, its effects on the treatment of gastric cancer remain unclear. Via multiple cellular and molecular approaches, we demonstrated that AT-I could potently inhibit cancer cell proliferation and induce apoptosis through inactivating Notch pathway. AT-I treatment led to the reduction of expressions of Notch1, Jagged1, and its downstream Hes1/ Hey1. Our results showed that AT-I inhibited the self-renewal capacity of gastric stem-like cells (GCSLCs) by suppression of their sphere formation capacity and cell viability. AT-I attenuated gastric cancer stem cell (GCSC) traits partly through inactivating Notch1, leading to reducing the expressions of its downstream target Hes1, Hey1 and CD44 in vitro. Collectively, our results suggest that AT-I might develop as a potential therapeutic drug for the treatment of gastric cancer.

  16. Inositol pyrophosphates regulate RNA polymerase I-mediated rRNA transcription in Saccharomyces cerevisiae.

    PubMed

    Thota, Swarna Gowri; Unnikannan, C P; Thampatty, Sitalakshmi R; Manorama, R; Bhandari, Rashna

    2015-02-15

    Ribosome biogenesis is an essential cellular process regulated by the metabolic state of a cell. We examined whether inositol pyrophosphates, energy-rich derivatives of inositol that act as metabolic messengers, play a role in ribosome synthesis in the budding yeast, Saccharomyces cerevisiae. Yeast strains lacking the inositol hexakisphosphate (IP6) kinase Kcs1, which is required for the synthesis of inositol pyrophosphates, display increased sensitivity to translation inhibitors and decreased protein synthesis. These phenotypes are reversed on expression of enzymatically active Kcs1, but not on expression of the inactive form. The kcs1Δ yeast cells exhibit reduced levels of ribosome subunits, suggesting that they are defective in ribosome biogenesis. The rate of rRNA synthesis, the first step of ribosome biogenesis, is decreased in kcs1Δ yeast strains, suggesting that RNA polymerase I (Pol I) activity may be reduced in these cells. We determined that the Pol I subunits, A190, A43 and A34.5, can accept a β-phosphate moiety from inositol pyrophosphates to undergo serine pyrophosphorylation. Although there is impaired rRNA synthesis in kcs1Δ yeast cells, we did not find any defect in recruitment of Pol I on rDNA, but observed that the rate of transcription elongation was compromised. Taken together, our findings highlight inositol pyrophosphates as novel regulators of rRNA transcription.

  17. Condensin I-mediated mitotic chromosome assembly requires association with chromokinesin KIF4A.

    PubMed

    Takahashi, Motoko; Wakai, Toshifumi; Hirota, Toru

    2016-09-01

    The chromokinesin KIF4A has been implicated in shaping mitotic chromosomes, but its functional relationship to condensin complexes remains controversial. Here, we found that, in mitosis, KIF4A associates with condensin I but not with condensin II. Mutational analyses indicated that the enrichment of condensin I to chromosomal axes depends on its association with KIF4A in a way that likely involves its motor activity. Remarkably, this interaction is required for condensin I to confer physiological properties to chromosomes. These observations provide an insight into how condensin I is enriched at chromosomal axes and underscore the significance of axial structure in organizing mitotic chromosomes. PMID:27633014

  18. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    PubMed

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  19. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira; Katoh, Yutai; Hasegawa, Akira; Snead, L.; Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  20. Electronic structure of Si/disilicide interfaces

    NASA Astrophysics Data System (ADS)

    Fujitani, Hideaki; Asano, Setsuro

    1990-01-01

    Using supercells, the electronic structures of Si(111)/CoSi2 and Si(111)/NiSi2 interfaces are studied by the linear muffin-tin orbital atomic sphere approximation method (LMTO-ASA). Schottky barrier heights (SBH's) are strongly correlated with the interface atomic structures and are determined mainly by interface bonding states and the screening effect of the semiconductor. Metal-induced gap states (MIGS) are metal wave function tails caused by the Schottky barriers.

  1. Electronic structure of Si/disilicide interfaces

    NASA Astrophysics Data System (ADS)

    Fujitani, Hideaki; Asano, Setsuro

    1989-11-01

    Using supercells, the electronic structures of Si(111)/CoSi 2 and Si(111)/NiSi 2 interfaces are studied by the linear muffin-tin orbital atomic sphere approximation method (LMTO-ASA). Schottky barrier heights (SBH's) are strongly correlated with the interface atomic structures and are determined mainly by interface bonding states and the screening effect of the semiconductor. Metal-induced gap states (MIGS) are metal wave function tails caused by the Schottky barriers.

  2. Mn4Si7 nanoinclusions in Mn-implanted Si

    NASA Astrophysics Data System (ADS)

    Romanowski, P.; Bak-Misiuk, J.; Sobczak, K.; Dziawa, P.; Dynowska, E.; Szczepanska, A.; Misiuk, A.

    2013-12-01

    Silicon single crystals were implanted with 160 keV Mn+ ions to a dose of 1×1016 cm-2 and next annealed for 1 h up to 1070 K under ambient pressure. Glancing incidence diffraction research performed using synchrotron radiation indicated that the post-implantation treatment influenced the creation of Mn4Si7 nanoinclusions. The dimensions and concentration of these inclusions, calculated from distribution of the X-ray diffuse scattering intensity are dependent on annealing temperature. The sizes and shapes of the inclusions were also determined by high-resolution transmission electron microscopy. Magnetic properties of the Si:Mn samples were studied using superconducting quantum interference device. The origin of ferromagnetic ordering is discussed in terms of the size of nanoinclusions.

  3. Electronic structure of Si vacancy centers in SiC

    NASA Astrophysics Data System (ADS)

    Soykal, Oney; Dev, Pratibha; Economou, Sophia

    2015-03-01

    The spin state of silicon vacancies in SiC is a promising candidate for applications in solid state quantum information technologies due to its long coherence time at room temperature, its technological availability and wide range of polytypism. Until recently, the electronic structure of this vacancy was not well understood. We have developed a group theoretical model that correctly predicts the spin 3/2 structure seen in recent experiments for the 4H-SiC defect. We have included several different mechanisms involved in the mixing of its spin states, such as crystal field splitting, spin-orbit coupling, spin-spin coupling, strain and Jahn-Teller interactions. We have also carried out DFT calculations that support and complement our analytical results.

  4. Si(1-x)Ge(x)/Si Infrared Photodiodes

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

  5. Effect of Si substrate on interfacial SiO{sub 2} scavenging in HfO{sub 2}/SiO{sub 2}/Si stacks

    SciTech Connect

    Li, Xiuyan Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-11-03

    The scavenging kinetics of an ultra-thin SiO{sub 2} interface layer (SiO{sub 2}-IL) in an HfO{sub 2}/SiO{sub 2}/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. {sup 18}O tracing experiments demonstrate that the O-atom moves from the SiO{sub 2}-IL to the HfO{sub 2} layer during scavenging. SiO{sub 2}-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V{sub O}) transferred from the HfO{sub 2} reacts with the SiO{sub 2}, which is in contact with the Si-substrate, is proposed for the SiO{sub 2}-IL scavenging.

  6. Stretchable Si Logic Devices with Graphene Interconnects.

    PubMed

    Lee, Wonho; Jang, Houk; Jang, Bongkyun; Kim, Jae-Hyun; Ahn, Jong-Hyun

    2015-12-16

    Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%.

  7. Understanding and Speaking siSwati.

    ERIC Educational Resources Information Center

    Nussbaum, Loren V.; And Others

    The present volume comprises an introductory course to spoken siSwati, an African language of the Niger-Congo group, also referred to as Swazi. The materials have two principle components, "Understanding siSwati" and "Speaking siSwati," each consisting of a series of "Cycles." The purpose of the U.S. component is to give the student an opportunity…

  8. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Black, W.M.

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  9. Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Chen, Yin-Yu; Chao, Der-Sheng; Tsai, Hsu-Sheng; Liang, Jenq-Horng

    2016-04-01

    The mechanisms of photoluminescence (PL) originating from Si+/C+ implanted SiO2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si+/C+ implanted SiO2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si+ and Si+/C+ implanted SiO2 films. In this study, thermally-grown SiO2 films on Si substrates were used as the matrix materials. The Si+ ions and C+ ions were separately implanted into the SiO2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600-1100 °C) for 1 h in a N2 ambient. The PL characteristics of the implanted SiO2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si+-implanted SiO2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si+ ion implantation, the SiO2 films which were sequentially implanted with Si+ and C+ ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si-C bonding, C-C graphite-like structure (sp2), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si+/C+ implanted SiO2 films was also established in this study.

  10. Location and Electronic Nature of Phosphorus in the Si Nanocrystal--SiO2 System.

    PubMed

    König, Dirk; Gutsch, Sebastian; Gnaser, Hubert; Wahl, Michael; Kopnarski, Michael; Göttlicher, Jörg; Steininger, Ralph; Zacharias, Margit; Hiller, Daniel

    2015-01-01

    Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P. PMID:25997696

  11. Location and Electronic Nature of Phosphorus in the Si Nanocrystal - SiO2 System

    NASA Astrophysics Data System (ADS)

    König, Dirk; Gutsch, Sebastian; Gnaser, Hubert; Wahl, Michael; Kopnarski, Michael; Göttlicher, Jörg; Steininger, Ralph; Zacharias, Margit; Hiller, Daniel

    2015-05-01

    Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P.

  12. Si@SiOx/graphene hydrogel composite anode for lithium-ion battery

    NASA Astrophysics Data System (ADS)

    Bai, Xuejun; Yu, Yueyang; Kung, Harold H.; Wang, Biao; Jiang, Jianming

    2016-02-01

    A porous 3D graphene hydrogel (GH) composite embedded with Si nanoparticles coated with an ultrathin SiOx layer (Si@SiOx/GH) is successfully synthesized using a solution-based self-assembly process. The thickness of the SiOx coating, formed by an ozone treatment of the 30-50 nm diameter Si particles, increases with the treatment temperature, and its formation results in the presence of Si2+ and Si4+ on the surface of the Si nanoparticles. The GH provides an electrically conducting network of interconnecting, micron-size open cells bounded by ultrathin stacked graphene sheets onto which the coated Si nanoparticles are dispersed. The agglomeration among the Si particles decreases with increasing extent of surface oxidation. Electrodes constructed with the Si@SiOx/GH containing 71 wt.% Si@SiOx exhibit a stable storage capacity of 1020 mAh g-1 at 4 A g-1 and 1640 mAh g-1 after 140 cycles at 0.1 A g-1. The outstanding electrochemical performance can be attributed to the porous, open cell 3D structure of GH, which provides a large internal space and flexible and electrically conductive graphenic matrix that can accommodate volumetric changes of Si nanoparticles and a highly porous 3D structure of high specific surface area that allows rapid diffusion of Li-ions and easy penetration of electrolyte.

  13. Ultrasound assisted siRNA delivery using PEG-siPlex loaded microbubbles.

    PubMed

    Vandenbroucke, Roosmarijn E; Lentacker, Ine; Demeester, Joseph; De Smedt, Stefaan C; Sanders, Niek N

    2008-03-20

    Short interfering RNA (siRNA) attracts much attention for the treatment of various diseases. However, its delivery, especially via systemic routes, remains a challenge. Indeed, naked siRNAs are rapidly degraded, while complexed siRNAs massively aggregate in the blood or are captured by macrophages. Although this can be circumvented by PEGylation, we found that PEGylation had a strong negative effect on the gene silencing efficiency of siRNA-liposome complexes (siPlexes). Recently, ultrasound combined with microbubbles has been used to deliver naked siRNA but the gene silencing efficiency is rather low and very high amounts of siRNA are required. To overcome the negative effects of PEGylation and to enhance the efficiency of ultrasound assisted siRNA delivery, we coupled PEGylated siPlexes (PEG-siPlexes) to microbubbles. Ultrasound radiation of these microbubbles resulted in massive release of unaltered PEG-siPlexes. Interestingly, PEG-siPlexes loaded on microbubbles were able to enter cells after exposure to ultrasound, in contrast to free PEG-siPlexes, which were not able to enter cells rapidly. Furthermore, these PEG-siPlex loaded microbubbles induced, in the presence of ultrasound, much higher gene silencing than free PEG-siPlexes. Additionally, the PEG-siPlex loaded microbubbles only silenced the expression of genes in the presence of ultrasound, which allows space and time controlled gene silencing.

  14. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    SciTech Connect

    Ping Wang, Y. Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  15. Si quantum dot structures and their applications

    NASA Astrophysics Data System (ADS)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  16. Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.

  17. Nanoporosity of Si (100) bars

    NASA Astrophysics Data System (ADS)

    Novikov, S. N.; Timoshenkov, S. P.; Minaev, V. S.; Goryunova, E. P.; Gerasimenko, N. N.; Smirnov, D. I.

    2016-09-01

    Si(100) samples cut from a typical bar (100 mm in diameter) prepared using industrial technology are studied. Measurements of the electron work function (EWF) show that the size effects in these samples (a reduction in thickness along with a sample's area and the EWF) detected earlier were due to nanostructure porosity that was buried by the technological treatment of a bar's surface. This hidden nanoporosity is assumed to be a manifestation of the secondary crystal structure.

  18. PtSi/Si LWIR Detectors Made With p+ Doping Spikes

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Park, Jin S.; George, Thomas; Fathauer, Robert W.; Jones, Eric W.; Maserjian, Joseph

    1996-01-01

    PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.

  19. Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  20. The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation

    SciTech Connect

    Srivastava, Pooja; Lee, Kwang-Ryeol; Mizuseki, Hiroshi; Kim, Seungchul; Shin, Mincheol

    2015-08-15

    We show, using density functional theory (DFT) calculations, that the Schottky barrier height (SBH) at the PtSi/Si interface can be lowered by uniaxial strain applied not only on Si but also on PtSi. The strain was applied to the (001) direction of Si and PtSi, which is normal for the interface. The SBH of the hole is lowered by 0.08 eV under 2% of tensile strain on Si and by 0.09 eV under 4 % of compressive strain on PtSi. Because the SBH at PtSi/Si contact is approximately 0.2 eV, this amount of reduction can significantly lower the resistance of the PtSi/Si contact; thus applying uniaxial strain on both PtSi and Si possibly enhances the performance of Schottky barrier field effect transistors. Theoretical models of SB formation and conventional structure model are evaluated. It is found that Pt penetration into Si stabilizes the interface and lowers the SBH by approximately 0.1 eV from the bulk-terminated interface model, which implies that conventionally used bulk-terminated interface models have significant errors. Among the theoretical models of SB formation, the model of strong Fermi level pining adequately explains the electron transfer phenomena and SBH, but it has limited ability to explain SBH changes induced by changes of interface structure.

  1. Formation of Si nanocrystals in SiOx, SiOx:C:H films and Si/SiO2 multilayer nano-heterostructures by pulse laser treatments

    NASA Astrophysics Data System (ADS)

    Neizvestniy, I. G.; Volodin, V. A.; Gismatulin, A. A.; Kamaev, G. N.; Antonenko, A. H.; Cherkov, A. G.; Litovchenko, V. G.; Lisovsky, I. P.; Maidanchuk, I. Yu.

    2014-12-01

    Furnace annealing and pulse laser treatments, including nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration and XeCl laser 308 nm wavelength, 10 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous hydrogenated silicon films, SiOx films and multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of impurities on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on nonrefractory substrates.

  2. SiC nanowires: A photocatalytic nanomaterial

    SciTech Connect

    Zhou Weimin; Yan Lijun; Wang Ying; Zhang Yafei

    2006-07-03

    Single-crystal {beta}-SiC nanowires coated with amorphous SiO{sub 2} were synthesized by a simple thermal evaporation technique. The photocatalytic activity of the SiC nanowires was characterized by measuring the photodegradation rate of acetaldehyde catalyzed by SiC as a function of UV irradiation time. It exhibited excellent photocatalytic activity, leading to the efficient decomposition of acetaldehyde by irradiation with UV light. The progress of the photocatalytic reaction can be monitored by the evolution of one of the products, CO{sub 2}. It has been observed that the as-synthesized SiC nanowires (with the SiO{sub 2} coating) have higher catalytic activity than the HF-etched, oxide-free SiC nanowires.

  3. Development of SiAlON materials

    NASA Technical Reports Server (NTRS)

    Layden, G. K.

    1979-01-01

    Cold pressing and sintering techniques were used to produce ceramic test specimens in which the major phase was either Si3N4 or a solid solution having the beta Si3N4 structure. Additional components were incorporated to promote liquid phase sintering. Glass and/or crystalline phase were consequently retained in boundaries between Si3N4 grains which largely determined the physical properties of the bodies. Systems investigated most extensively included R-Si-Al-O-N (R = rare earth element) Zr-Si-Al-O-N, Y-Si-Be-O-N, and R1-R2-Si-O-N. Room temperature and 1370 C modulus of ruptured, 1370 C creep, and oxidation behavior are discussed in terms of phase relationships in a parent quinery, and relavent oxide systems.

  4. Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure

    PubMed Central

    2013-01-01

    We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED. PMID:23289520

  5. High temperature compounds for turbine vanes. [of SiC, Si3N4, and Si composites

    NASA Technical Reports Server (NTRS)

    Rhodes, W. H.; Cannon, R. M., Jr.

    1974-01-01

    Fabrication and microstructure control studies were conducted on SiC, Si3N and composites based on Si3N. Charpy mode impact testing to 2400 F established that Si3N4/Mo composites have excellent potential. Attempts to fabricate composites of Si3N4 with superalloys, both by hot pressing and infiltration were largely unsuccessful in comparison to using Mo, Re, and Ta which are less reactive. Modest improvements in impact strength were realized for monolithic Si3N4; however, SiC strengths increased by a factor of six and now equal values achieved for Si3N4. Correlations of impact strength with material properties are discussed. Reduced MgO densification aid additions to Si3N4 were found to decrease densification kinetics, increase final porosity, decrease room temperature bend strength, increase high temperature bend strength, and decrease bend stress rupture properties. The decrease in bend strength at high temperature for fine grain size SiC suggested that a slightly larger grain size material with a nearly constant strength-temperature relation may prove desirable in the creep and stress rupture mode.

  6. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: SiC based Si/SiC heterojunction and its rectifying characteristics

    NASA Astrophysics Data System (ADS)

    Zhu, Feng; Chen, Zhi-Ming; Li, Lian-Bi; Zhao, Shun-Feng; Lin, Tao

    2009-11-01

    The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700-950 °C. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 °C to 900 °C are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.

  7. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  8. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    SciTech Connect

    Halverson, H.; Curtin, W.A.

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  9. ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations

    NASA Astrophysics Data System (ADS)

    Lu, Fengyuan; Lang, Maik; Huang, Mengbing; Namavar, Fereydoon; Trautmann, Christina; Ewing, Rodney C.; Lian, Jie

    2012-09-01

    Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne+ and 1 MeV Kr2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.

  10. Iron disilicide formation by Au-Si eutectic reaction on Si substrate

    NASA Astrophysics Data System (ADS)

    Akiyama, Kensuke; Kaneko, Satoru; Yokomizo, Kazuya; Itakura, Masaru

    2009-11-01

    We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2.

  11. Propagation of misfit dislocations from buffer/Si interface into Si

    DOEpatents

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  12. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    NASA Astrophysics Data System (ADS)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  13. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  14. Solution plasma synthesis of Si nanoparticles

    NASA Astrophysics Data System (ADS)

    Saito, Genki; Sakaguchi, Norihito

    2015-06-01

    Silicon nanoparticles (Si-NPs) were directly synthesized from a Si bar electrode via a solution plasma. In order to produce smaller Si-NPs, the effects of different electrolytes and applied voltages on the product were investigated in the experiments detailed in this paper. The results demonstrated that the use of an acidic solution of 0.1 M HCl or HNO3 produced Si-NPs without SiO2 formation. According to the transmission electron microscopy and electron energy-loss spectroscopy, the obtained Si-NPs contained both amorphous and polycrystalline Si particles, among which the smaller Si-NPs tended to be amorphous. When an alkaline solution of K2CO3 was used instead, amorphous SiO2 particles were synthesized owing to the corrosion of Si in the high-temperature environment. The pH values of KCl and KNO3 increased during electrolysis, and the products were partially oxidized in the alkaline solutions. The particle size increased with an increasing applied voltage because the excitation temperature of the plasma increased.

  15. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    SciTech Connect

    Jiang, Xiaofan; Ma, Zhongyuan Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  16. Solution plasma synthesis of Si nanoparticles.

    PubMed

    Saito, Genki; Sakaguchi, Norihito

    2015-06-12

    Silicon nanoparticles (Si-NPs) were directly synthesized from a Si bar electrode via a solution plasma. In order to produce smaller Si-NPs, the effects of different electrolytes and applied voltages on the product were investigated in the experiments detailed in this paper. The results demonstrated that the use of an acidic solution of 0.1 M HCl or HNO3 produced Si-NPs without SiO2 formation. According to the transmission electron microscopy and electron energy-loss spectroscopy, the obtained Si-NPs contained both amorphous and polycrystalline Si particles, among which the smaller Si-NPs tended to be amorphous. When an alkaline solution of K2CO3 was used instead, amorphous SiO2 particles were synthesized owing to the corrosion of Si in the high-temperature environment. The pH values of KCl and KNO3 increased during electrolysis, and the products were partially oxidized in the alkaline solutions. The particle size increased with an increasing applied voltage because the excitation temperature of the plasma increased.

  17. Oxidation behaviour of SiC coatings

    NASA Astrophysics Data System (ADS)

    Mergia, K.; Lafatzis, D.; Moutis, N.; Speliotis, T.; Apostolopoulos, G.; Cousin, F.

    2008-08-01

    Amorphous silicon carbide (SiC) films were deposited on silicon substrates by radio-frequency magnetron sputtering. The films were oxidized in air in the temperature range 400-900 °C and for times from 1 to 16 h. Neutron reflectivity measurements provided information on the thickness, density and roughness of the SiC and on the formed SiO2 layers. Fourier transform infrared spectroscopy was used to determine the bond structure of the formed SiO2 and changes in the bonding of SiC after exposure at the oxidation temperature. The surface morphology of the oxidized films was characterized by atomic force microscopy measurements. The oxidation kinetics is initially fast and as the SiO2 layer is formed it slows down. The SiC consumption varies linearly with time at all oxidation temperatures. Exposure of the SiC at the oxidation temperature affects its density and to some degree its bond structure, while the formed SiO2 has density and bond structure as that formed by oxidation of Si under the same conditions.

  18. Resonance Raman mapping as a tool to monitor and manipulate Si nanocrystals in Si-SiO{sub 2} nanocomposite

    SciTech Connect

    Rani, Ekta; Ingale, Alka A.; Chaturvedi, A.; Joshi, M. P.; Kukreja, L. M.

    2015-10-19

    Specially designed laser heating experiment along with Raman mapping on Si-SiO{sub 2} nanocomposites elucidates the contribution of core and surface/interface in the intermediate frequency range (511–514 cm{sup −1}) Si phonons. The contribution of core to surface/interface increases with the size of Si nanocrystal, which itself increases on laser irradiation. Further, it is found that resonance Raman is crucial to the observance of surface/interface phonons and wavelength dependent Raman mapping can be corroborated with band edges observed in absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO{sub 2} nanocomposite, simultaneously for photovoltaic device applications.

  19. Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Shaban, Mahmoud; Bayoumi, Amr M.; Farouk, Doaa; Saleh, Mohamed B.; Yoshitake, Tsuyoshi

    2016-09-01

    In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm-3 eV-1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

  20. Atomic Scale Mechanisms of Radiation Effects in Si-SiO2 Systems

    NASA Astrophysics Data System (ADS)

    Rashkeev, Sergey N.

    2002-03-01

    It is generally accepted that interface-trap formation in Si-SiO2 systems is the result of radiation-released protons. Three different types of behavior have been observed for H in Si-SiO2 structures: a) Radiation experiments established that H^+ released in SiO2 migrates to the Si-SiO2 interface where it induces new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H^+ can be cycled to and from the interface by reversing the oxide electric field; c) Hydrogen is known to passivate Si dangling bonds at the Si-SiO2 interface, but the subsequent arrival of H^+ at the interface causes depassivation of Si-H bonds. We report first-principles calculations that identify atomic-scale mechanisms for the different types of behavior and the conditions that are necessary for each. We show that Si-Si bonds on the oxide side, i.e., ``suboxide bonds'', can trap H^+ in deep wells with asymmetric barrier. In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposite Si-SiO2 interfaces if the density of suboxide bonds is high. Also, we establish that H^+ is the only stable charge state at the interface and that H^+ reacts directly (without being neutralized by a Si electron) with a Si-H bond, forming an H2 molecule and a positively charged dangling bond (Pb center). As a result, H-induced interface-trap formation does not depend on the availability of Si electrons. This work was supported in part by AFOSR Grant F-49620-99-1-0289, and done in collaboration with S. T. Pantelides, D. M. Fleetwood, and R. D. Schrimpf.

  1. SI PC104 Performance Test Report

    SciTech Connect

    Montelongo, S

    2005-12-16

    The Spectral Instruments (SI) PC104 systems associated with the SI-1000 CCD camera exhibited intermittent power problems during setup, test and operations which called for further evaluation and testing. The SI PC104 System is the interface between the SI-1000 CCD camera and its associated Diagnostic Controller (DC). As such, the SI PC104 must be a reliable, robust system capable of providing consistent performance in various configurations and operating conditions. This SI PC104 system consists of a stackable set of modules designed to meet the PC104+ Industry Standard. The SI PC104 System consists of a CPU module, SI Camera card, Media converter card, Video card and a I/O module. The root cause of power problems was identified as failing solder joints at the LEMO power connector attached to the SI Camera Card. The recommended solution was to provide power to the PC104 system via a PC104+ power supply module configured into the PC104 stack instead of thru the LEMO power connector. Test plans (2) were developed to test SI PC104 performance and identify any outstanding issues noted during extended operations. Test Plan 1 included performance and image acquisition tests. Test Plan 2 verified performance after implementing recommendations. Test Plan 2 also included verifying integrity of system files and driver installation after bootup. Each test plan was implemented to fully test against each set of problems noted. Test Plan presentations and Test Plan results are attached as appendices. Anticipated test results will show successful operation and reliable performance of the SI PC104 system receiving its power via a PC104 power supply module. A SI PC104 Usage Recommendation Memo will be sent out to the SI PC104 User Community. Recommendation memo(s) are attached as appendices.

  2. Epitaxial gallium oxide on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Nikolaev, V. I.; Osipov, A. V.; Osipova, E. V.; Pechnikov, A. I.; Feoktistov, N. A.

    2016-09-01

    Well-textured gallium oxide β-Ga2O3 layers with a thickness of 1 μm and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer 100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The β-Ga2O3 films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure β-phase Ga2O3 with the (overline 2 01) orientation. The dependence of the dielectric constant of epitaxial β-Ga2O3 on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.

  3. Modelling the influence of high currents on the cutoff frequency in Si/SiGe/Si heterojunction transistors

    NASA Astrophysics Data System (ADS)

    Briggs, P. J.; Walker, A. B.; Herbert, D. C.

    1998-05-01

    A one-dimensional self-consistent bipolar Monte Carlo simulation code has been used to model carrier mobilities in strained doped SiGe and the base-collector region of Si/SiGe/Si and SiC/Si heterojunction bipolar transistors (HBTs) with wide collectors, to study the variation of the cutoff frequency 0268-1242/13/5/005/img6 with collector current density 0268-1242/13/5/005/img7. Our results show that while the presence of strain enhances the electron mobility, the scattering from alloy disorder and from ionized impurities reduces the electron mobility so much that it is less than that of Si at the same doping level, leading to larger base transit times 0268-1242/13/5/005/img8 and hence poorer 0268-1242/13/5/005/img6 performance for large 0268-1242/13/5/005/img7 for an Si/SiGe/Si HBT than for an SiC/Si HBT. At high values of 0268-1242/13/5/005/img7, we demonstrate the formation of a parasitic electron barrier at the base-collector interface which causes a sharp increase in 0268-1242/13/5/005/img8 and hence a dramatic reduction in 0268-1242/13/5/005/img6. Based on a comparison of the height of this parasitic barrier with estimates from an analytical model, we suggest a physical mechanism for base pushout after barrier formation that differs somewhat from that given for the analytical model.

  4. Ir/IrSi3/Si Schottky-Barrier Infrared Detector

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Quantum efficiency increased. Proposed Schottky-barrier infrared detector has double metallic layer of Ir and IrSi3 instead of single metallic layer of Ir, IrSi, or IrSi3. Offers advantages of both relatively high infrared absorption in thin film of Ir and stability and reproducibility of layer of IrSi3 in contact with Si. Also serves as barrier to chemical reactions between Ir overlayer and Si substrate. Detectors used to form focal-plane array integrated with charge-coupled-device-addressing and image-processing circuitry.

  5. Molecular-Beam Epitaxy Of CrSi2 on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; Grunthaner, Paula J.; Lin, True-Lon; Jamieson, David N.; Mazur, Jurek H.

    1989-01-01

    Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.

  6. In-Plane Si Nanowire Growth Mechanism in Absence of External Si Flux.

    PubMed

    Curiotto, Stefano; Leroy, Frédéric; Cheynis, Fabien; Müller, Pierre

    2015-07-01

    We report on a new mechanism of nanowire formation: during Au deposition on Si(110) substrates, Au-Si droplets grow, move spontaneously, and fabricate a Si nanowire behind them in the absence of Si external flux. Nanowires are formed by Si dissolved from the substrate at the advancing front of the droplets and transported backward to the crystallization front. The droplet shape is determined by the Si etching anisotropy. The nanowire formation can be tuned by changing experimental parameters like substrate temperature and Au deposition rate.

  7. Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

    SciTech Connect

    Ohmi, Hiromasa; Goto, Akihiro; Kamada, Daiki; Hamaoka, Yoshinori; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2009-11-02

    Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by using hydrogen plasma induced chemical transport at subatmospheric pressure. The purification mechanism is based on the different hydrogenation behaviors of the various impurity elements in MG-Si. The prepared Si films clearly had fewer typical metal impurities (Fe, Al, Ti, Cr, Mn, etc.) than those in the MG-Si. In particular, the Fe concentration was drastically reduced from 6900 mass ppm to less than 0.1 mass ppm by one time chemical transport. Furthermore, metal impurity concentrations were further reduced by repeating chemical transport deposition.

  8. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  9. Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

    SciTech Connect

    Melnikov, M. Yu. Shashkin, A. A.; Dolgopolov, V. T.; Huang, S.-H.; Liu, C. W.; Kravchenko, S. V.

    2015-03-02

    We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m{sup 2}/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al{sub 2}O{sub 3}, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.

  10. Evolution of surface stress during oxygen exposure of clean Si(111), Si(100), and amorphous Si surfaces

    SciTech Connect

    Flötotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-01-14

    The evolutions of the surface stress of Si(111)-7 × 7, Si(100)-2 × 1, and a-Si surfaces upon oxygen exposure at pO{sub 2} = 1 × 10{sup −4} Pa and room temperature have been investigated in a comparative manner using a specimen-curvature based technique. To this end, a generally applicable, dedicated set of experiments has been devised and performed to deduce and correct for the surface stress change owing to oxygen reaction(s) at the (poorly-defined) back face of the specimen only. On this basis, it could be demonstrated that exposure of clean Si(111)-7 × 7, Si(100)-2 × 1 and a-Si surfaces to pure oxygen gas results in compressive surface stress changes for all three surfaces due to the incorporation of oxygen into Si backbonds. The measured surface stress change decreases with decreasing atomic packing density at the clean Si surfaces, which complies well with the less-densily packed Si surface regions containing more free volume for the accommodation of adsorbed O atoms.

  11. Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures

    SciTech Connect

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-07-15

    {beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

  12. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures.

    PubMed

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-12-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  13. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures

    NASA Astrophysics Data System (ADS)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-06-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree ( ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  14. Preservation of atomic flatness at SiO_2/Si(111) interface during furnace oxidation

    NASA Astrophysics Data System (ADS)

    Miyata, Noriyuki; Watanabe, Heiji; Ichikawa, Masakazu

    1998-03-01

    We used a scanning reflection electron microscopy (SREM) to study SiO_2/Si(111) interfaces formed by a furnace oxidation. Clean Si(111)-7x7 surfaces were slightly oxidized at 630^circC in ultrahigh-vacuum chamber (0.3 nm thick). Then SiO2 layers (2.5 - 48 nm) were grown by furnace oxidation under 1-atm O2 at 900^circC. In order to observe atomic-step images at thick-SiO_2/Si interfaces, as-grown SiO2 layers were chemically thinned by using dilute HF to less than 1 nm without exposure of the Si areas. SREM observation indicates that atomic steps on an initial Si surface are preserved at the SiO_2/Si interface and the interfacial steps do not move laterally even after 48-nm-thick oxidation. A profile analysis of reflection high-energy electron diffraction shows that the SiO_2/Si interface consists of islands which have a diameter of about 5 nm and monolayer depth. Our results indicate that the layer-by-layer oxidation caused by two-dimensional island nucleation proceeds under furnace oxidation.

  15. Microstructure design and control for improvement of thermal conductivity of SiCf/SiC composites

    NASA Astrophysics Data System (ADS)

    Yoshida, Katsumi; Kajikawa, Satoshi; Yano, Toyohiko

    2013-09-01

    We focused on microstructure design and control of SiCf/SiC composite based on our fabrication process and the simple model of thermal conductivity of the SiCf/SiC composite, and the improvement of their thermal conductivity was investigated. Submicron-sized α-SiC with coarse α-SiC particles addition was used as the starting materials for SiC matrix layers between SiC fiber cloths because it showed higher thermal conductivity. The thermal conductivity of PCS-composite, EPD-composite and Untreated-composite was 18, 45 and 56 W/m K, respectively, and these values were much higher than that of the composites reported in our previous papers. Untreated composite is simply considered as a multilayered composite consisting of the SiC fiber layers with high thermal conductivity and the SiC matrix layers with high thermal conductivity. The experimental thermal conductivity of the Untreated composite well agreed with the theoretical thermal conductivity calculated by series model. Thermal conductivity of EPD-composite was lower than that of Untreated composite. In EPD-composite, the thermal conductivity of SiC fiber layers with the SiC matrix should be lower than that of SiC fibers themselves due to the SiC matrix with slightly lower thermal conductivity in SiC fiber cloths. The SiC matrix formed in SiC fiber cloths in PCS-composite was derived from PCS, and this matrix would show much lower thermal conductivity due to its low crystallinity. PCS-composite is considered as a multilayered composite consisting of the SiC fiber layers with very low thermal conductivity and the SiC matrix layers with high thermal conductivity, and thus the PCS-composite has low thermal conductivity. In this study, higher thermal conductivity of SiCf/SiC composite was successfully achieved by EPD process and using microstructure-controlled SiC matrix and polycrystalline SiC fibers.

  16. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    SciTech Connect

    Wilson, Dane F.

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  17. SiLix-C Nanocomposites

    NASA Technical Reports Server (NTRS)

    Henry, Francois

    2015-01-01

    For this Phase II project, Superior Graphite Co., in collaboration with the Georgia Institute of Technology and Streamline Nanotechnologies, Inc., developed, explored the properties of, and demonstrated the enhanced capabilities of novel nanostructured SiLix-C anodes. These anodes can retain high capacity at a rapid 2-hour discharge rate and at 0 C when used in Li-ion batteries. In Phase I, these advanced anode materials had specific capacity in excess of 1,000 mAh/g, minimal irreversible capacity losses, and stable performance for 20 cycles at C/1. The goals in Phase II were to develop and apply a variety of novel nanomaterials, fine-tune the properties of composite particles at the nanoscale, optimize the composition of the anodes, and select appropriate binder and electrolytes. In order to achieve a breakthrough in power characteristics of Li-ion batteries, the team developed new nanostructured SiLix-C anode materials to offer up to 1,200 mAh/g at C/2 at 0 C.

  18. SiC-Based Gas Sensor Development

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Neudeck, P. G.; Gray, M.; Androjna, D.; Chen, L.-Y.; Hoffman, R. W., Jr.; Liu, C. C.; Wu, Q. H.

    2000-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

  19. SiD Letter of Intent

    SciTech Connect

    Aihara, H.,; Burrows, P.,; Oreglia, M.,; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  20. Graphene/Si-nanowire heterostructure molecular sensors

    PubMed Central

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-01-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism. PMID:24947403

  1. Si isotope homogeneity of the solar nebula

    SciTech Connect

    Pringle, Emily A.; Savage, Paul S.; Moynier, Frédéric; Jackson, Matthew G.; Barrat, Jean-Alix E-mail: savage@levee.wustl.edu E-mail: moynier@ipgp.fr E-mail: Jean-Alix.Barrat@univ-brest.fr

    2013-12-20

    The presence or absence of variations in the mass-independent abundances of Si isotopes in bulk meteorites provides important clues concerning the evolution of the early solar system. No Si isotopic anomalies have been found within the level of analytical precision of 15 ppm in {sup 29}Si/{sup 28}Si across a wide range of inner solar system materials, including terrestrial basalts, chondrites, and achondrites. A possible exception is the angrites, which may exhibit small excesses of {sup 29}Si. However, the general absence of anomalies suggests that primitive meteorites and differentiated planetesimals formed in a reservoir that was isotopically homogenous with respect to Si. Furthermore, the lack of resolvable anomalies in the calcium-aluminum-rich inclusion measured here suggests that any nucleosynthetic anomalies in Si isotopes were erased through mixing in the solar nebula prior to the formation of refractory solids. The homogeneity exhibited by Si isotopes may have implications for the distribution of Mg isotopes in the solar nebula. Based on supernova nucleosynthetic yield calculations, the expected magnitude of heavy-isotope overabundance is larger for Si than for Mg, suggesting that any potential Mg heterogeneity, if present, exists below the 15 ppm level.

  2. Characterization of SiC-SiC composites for accident tolerant fuel cladding

    NASA Astrophysics Data System (ADS)

    Deck, C. P.; Jacobsen, G. M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H. E.; Back, C. A.

    2015-11-01

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC-SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC-SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  3. 26Si Excited States via One-Neutron Removal from 27Si Using Radioactive Beam

    NASA Astrophysics Data System (ADS)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K. M.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2013-03-01

    A measurement of the p(27Si, d)26Si reaction has been performed to study levels of 26Si, with connections to the stellar 25Al(p, γ)26Si reaction rate. A beam of adioactive 27Si of energy 84.3 MeV/A was impinged on a polypropylene foil (CH2) of 180 mg/cm2 in thickness. De-excitation γ-rays were detected with a highly-segmented germanium detector array, in coincidence with the 26Si recoils. Our results are an independent measurement of states used in the energy calibration of other experiments on 26Si structure. They also suggest that the spin-parity of the Ex(26Si) = 6454 keV (Er = 940 keV) state should be 4+ instead of the previously adopted assignment of 0+.

  4. Fabrication and characterization of SiGe coaxial quantum wells on ordered Si nanopillars

    NASA Astrophysics Data System (ADS)

    Wu, Zilong; Lei, Hui; Zhou, Tong; Fan, Yongliang; Zhong, Zhenyang

    2014-02-01

    Controlled SiGe coaxial quantum wells (CQWs) on periodic Si(001) nanopillars in a large area are explored systematically. The periodic SiGe CQW nanopillars are fabricated by a combination of nanosphere lithography, metal assisted chemical etching and epitaxial growth. The period, the radius, the height, the composition and the thickness of the SiGe alloy layer can all be intentionally modified. Considerably enhanced photoluminescence (PL) from the SiGe CQW nanopillars is observed, which is composed of four peaks. Such PL features are explained by the coupling between the spontaneous emissions of the SiGe CQW and the Mie resonant modes of the nanopillars, which can be further improved by optimizing the structural parameters of the SiGe CQW and the nanopillars. Our results demonstrate a feasible route to obtaining controlled SiGe CQW nanopillars, which have potential applications in optoelectronic devices.

  5. Recycling of Al-Si die casting scraps for solar Si feedstock

    NASA Astrophysics Data System (ADS)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  6. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    SciTech Connect

    Windisch, C.F. Jr.; Jones, R.H.; Snead, L.L.

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  7. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si

    SciTech Connect

    Ma Ming; Xue Qingzhong; Chen Huijuan; Zhou Xiaoyan; Xia Dan; Lv Cheng; Xie Jie

    2010-08-09

    The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.

  8. Single crystalline SiGe layers on Si by solid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lieten, R. R.; McCallum, J. C.; Johnson, B. C.

    2015-04-01

    We demonstrate a straightforward way to obtain single crystalline SiGe layers on silicon substrates. Amorphous SiGe layers, deposited by plasma enhanced chemical vapour deposition on Si, are transformed into single crystalline and smooth layers by solid phase epitaxy during annealing in a N2 atmosphere. The SiGe layers relax during the crystallization anneal and become slightly tensile strained during cooldown due to the thermal mismatch. The SiGe layers show excellent structural quality for compositions ranging from Ge- to Si-rich. The Ge content can be accurately estimated from the SiH4 to GeH4 flow ratio. Furthermore, the crystallization temperature decreases linearly with increasing Ge content from 725 °C for a-Si to 475 °C for a-Ge.

  9. Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces

    SciTech Connect

    Ogawa, Shuichi Tang, Jiayi; Takakuwa, Yuji

    2015-08-15

    Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the surface by Langmuir-type adsorption. This change in the domain ratio is attributed to the emission of Si atoms. We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at S{sub B} steps. Based on our model, we find experimentally that up to 0.4 ML of Si atoms are emitted during the oxidation of a Si(001) surface at 576 °C.

  10. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer.

    PubMed

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-01-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm(2) above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers. PMID:26601894

  11. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

    PubMed Central

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-01-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers. PMID:26601894

  12. Room Temperature Creep Of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Gyekenyesi, Andrew; Levine, Stanley (Technical Monitor)

    2001-01-01

    During a recent experimental study, time dependent deformation was observed for a damaged Hi-Nicalon reinforced, BN interphase, chemically vapor infiltrated SiC matrix composites subjected to static loading at room temperature. The static load curves resembled primary creep curves. In addition, acoustic emission was monitored during the test and significant AE activity was recorded while maintaining a constant load, which suggested matrix cracking or interfacial sliding. For similar composites with carbon interphases, little or no time dependent deformation was observed. Evidently, exposure of the BN interphase to the ambient environment resulted in a reduction in the interfacial mechanical properties, i.e. interfacial shear strength and/or debond energy. These results were in qualitative agreement with observations made by Eldridge of a reduction in interfacial shear stress with time at room temperature as measured by fiber push-in experiments.

  13. Electrophysical properties of Si/SiO2 nanostructures fabricated by direct bonding

    NASA Astrophysics Data System (ADS)

    Gismatulin, A. A.; Kamaev, G. N.

    2016-06-01

    The results of experimental investigation of diode n ++- p ++-Si structures, which were fabricated by direct bonding and have tunneling-thin SiO2 with Si nanoclusters embedded into the interface, are presented. The memristive effect with bipolar switching is demonstrated. The introduction of Si nanoclusters into the dielectric reduces the randomness of formation of a conducting channel. Intermediate metastable states are observed in the current-voltage characteristics. This may prove to be important for multibit data storage.

  14. Effect of irradiation on thermal expansion of SiC{sub f}/SiC composites

    SciTech Connect

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC{sub f}/SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) {beta}-SiC at all temperatures.

  15. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 {times} 6 {times} 2 mm{sup 3} with a span-to-depth ratio of 10/1.

  16. Vanadium, Cr, Si, and the Mg/Si Ratio of the Earth

    NASA Technical Reports Server (NTRS)

    Drake, Michael J.; Domanik, Kenneth; Bailey, Edward

    2003-01-01

    Experiments investigating the partitioning of V, Cr, and Si between metal and silicate at various pressures, temperatures, redox state, and composition demonstrate that V and Cr are always more siderophile than Si. The relatively high abundances of V and Cr in the Earth's upper mantle indicate that the high Mg/Si ratio of the Earth's upper mantle cannot be attributed to extraction of Si into the core and must be an intrinsic bulk property of the silicate Earth.

  17. Formation of ferromagnetic interface between {beta}-FeSi{sub 2} and Si(111) substrate

    SciTech Connect

    Hattori, Azusa N.; Hattori, Ken; Kodama, Kenji; Hosoito, Nobuyoshi; Daimon, Hiroshi

    2007-11-12

    Epitaxial {beta}-FeSi{sub 2} thin films were grown on Si(111)7x7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a {beta}-FeSi{sub 2} surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements.

  18. Time-resolved photoluminescence properties of ion-beam-synthesized β-FeSi2 and Si-implanted Si

    NASA Astrophysics Data System (ADS)

    Terai, Yoshikazu; Maeda, Yoshihito

    2015-07-01

    Temporal decay characteristics of 1.54 µm photoluminescence (PL) were investigated in β-FeSi2 and Si-implanted Si samples grown by ion-beam-synthesis (IBS). In the samples, the band-edge PL of β-FeSi2 (A-band) and the dislocation-related PL (D1-band) of Si were both observed at ˜0.8 eV. Regarding the dependence of the PL decay curves on excitation power density (P), PL decay curves without extrinsic effects were obtained at a low P of P ≤ 4.3 mW/cm2. The PL decay times obtained at a low P showed clear differences between the A-band and the D1-line. The result showed that the band-edge PL of β-FeSi2 was distinguished from the dislocation-related PL of Si by the PL decay times. The intrinsic PL decay times of β-FeSi2 were determined to be τ1 = 70-100 ns and τ2 = 550-670 ns at 5 K.

  19. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  20. Advances in SiC/SiC Composites for Aero-Propulsion

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.

    2013-01-01

    In the last decade, considerable progress has been made in the development and application of ceramic matrix composites consisting of silicon carbide (SiC) based matrices reinforced by small-diameter continuous-length SiC-based fibers. For example, these SiC/SiC composites are now in the early stages of implementation into hot-section components of civil aero-propulsion gas turbine engines, where in comparison to current metallic components they offer multiple advantages due to their lighter weight and higher temperature structural capability. For current production-ready SiC/SiC, this temperature capability for long time structural applications is 1250 degC, which is better than 1100 degC for the best metallic superalloys. Foreseeing that even higher structural reliability and temperature capability would continue to increase the advantages of SiC/SiC composites, progress in recent years has also been made at NASA toward improving the properties of SiC/SiC composites by optimizing the various constituent materials and geometries within composite microstructures. The primary objective of this chapter is to detail this latter progress, both fundamentally and practically, with particular emphasis on recent advancements in the materials and processes for the fiber, fiber coating, fiber architecture, and matrix, and in the design methods for incorporating these constituents into SiC/SiC microstructures with improved thermo-structural performance.

  1. Optical characterization of the PtSi/Si by using spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Le, Van Long; Kim, Tae Jung; Park, Han Gyeol; Kim, Hwa Seob; Yoo, Chang Hyun; Kim, Hyoung Uk; Kim, Young Dong; Kim, Junsoo; Im, Solyee; Choi, Won Chul; Moon, Seung Eon; Nam, Eun Soo

    2016-08-01

    We report an optical characterization of PtSi films for thermoelectric device applications which was done by using nondestructive spectroscopic ellipsometry (SE). A Pt monolayer and a Pt-Si multilayer which consisted of three pairs of Pt and Si layers were deposited on p-doped-silicon substrates by using sputtering method; then, rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data < ɛ > = < ɛ 1 > + i < ɛ 2 > for the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing the Tauc-Lorentz and the Drude models, determined the dielectric function ( ɛ) of the PtSi films. We found that the composition ratio of Pt:Si was nearly 1:1 for the PtSi monolayer and we observed transitions between occupied and unoccupied states in the Pt 5 d states. We also observed the formation of PtSi layers in the Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy.

  2. Fabrication of nanometer single crystal metallic CoSi2 structures on Si

    NASA Technical Reports Server (NTRS)

    Nieh, Kai-Wei (Inventor); Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor)

    1991-01-01

    Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

  3. About the International System of Units (SI) Part III. SI Table

    ERIC Educational Resources Information Center

    Aubrecht, Gordon J., II; French, Anthony P.; Iona, Mario

    2012-01-01

    Before discussing more details of SI, we will summarize the essentials in a few tables that can serve as ready references. If a unit isn't listed in Tables I-IV, it is not part of SI or specifically allowed for use with SI. The units and symbols that are sufficient for most everyday applications are given in bold.

  4. Further Developments in Modeling Creep Effects Within Structural SiC/SiC Components

    NASA Technical Reports Server (NTRS)

    Lang, Jerry; DiCarlo, James A.

    2008-01-01

    Anticipating the implementation of advanced SiC/SiC composites into turbine section components of future aero-propulsion engines, the primary objective of this on-going study is to develop physics-based analytical and finite-element modeling tools to predict the effects of constituent creep on SiC/SiC component service life. A second objective is to understand how to possibly manipulate constituent materials and processes in order to minimize these effects. Focusing on SiC/SiC components experiencing through-thickness stress gradients (e.g., airfoil leading edge), prior NASA creep modeling studies showed that detrimental residual stress effects can develop globally within the component walls which can increase the risk of matrix cracking. These studies assumed that the SiC/SiC composites behaved as isotropic viscoelastic continuum materials with creep behavior that was linear and symmetric with stress and that the creep parameters could be obtained from creep data as experimentally measured in-plane in the fiber direction of advanced thin-walled 2D SiC/SiC panels. The present study expands on those prior efforts by including constituent behavior with non-linear stress dependencies in order to predict such key creep-related SiC/SiC properties as time-dependent matrix stress, constituent creep and content effects on composite creep rates and rupture times, and stresses on fiber and matrix during and after creep.

  5. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    PubMed

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-01

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod. PMID:26818131

  6. siRNAmod: A database of experimentally validated chemically modified siRNAs

    PubMed Central

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-01

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod. PMID:26818131

  7. Mechanism of photoluminescence investigation of Si nano-crystals embedded in SiOx

    NASA Astrophysics Data System (ADS)

    Vivas Hernández, A.; Torchynska, T. V.; Guerrero Moreno, I.

    2010-05-01

    Nanoscaled Si (Ge) systems continue to be of interest for their potential application as Si (Ge) based light emiting materials and photonic structures. Optical properties of such systems are sensitive to nanocrystallite (NC) size fluctuations as well as to defects effects due to large surface to volume ratio in small NCs. Intensive research of Si (Ge) NCs is focused on the elucidation of the mechanism of radiative recombination with the aim to provide high efficient emission at room temperature in different spectral range. The bright visible photoluminescence (PL) of the Si (Ge)-SiOX system was investigated during last 15 years and several models were proposed. It was shown that blue (~2.64 eV) and green (~2.25 eV) PL are caused by various emitting centers in silicon oxide [1], while the nature of the more intensive red (1.70-2.00 eV) and infrared (0.80-1.60 eV) PL bands steel is no clear. These include PL model connected whit quantum confinement effects in Si (Ge) nanocrystallites [2-4], surface states on Si (Ge) nanocrystallites, as well as defects at the Si/SiOX (Ge/SiOX) interface and in the SiO2 layer [5-11]. It should be noted, that even investigation of PL on single Si quantum dots [12] cannot undoubtedly confirm the quantum confinement nature of red emission.

  8. In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces

    NASA Astrophysics Data System (ADS)

    Carter, R. J.; Schneider, T. P.; Montgomery, J. S.; Nemanich, R. J.

    1994-11-01

    A RF H-plasma exposure was used to clean the surface of Si-SiO2 patterned wafers. The areal coverage of SiO2 to bare Si was 4 to 1, and the patterns were long strips, small squares, and large open regions. The plasma-surface etching was monitored by residual gas analysis (RGA). The RGA spectra indicated etching of the Si surface at temperatures below 400 C and no detectable by-products due to interactions with the SiO2 regions for temperatures less than 450 C. The patterned surfaces were characterized with low energy electron diffraction (LEED) (from the bare Si regions) and atomic force microscopy (AFM). The LEED patterns indicate 1 x 1 and 2 x 1 surface symmetries at 300 and 450 C, respectively. The sharpness of the LEED patterns as well as the 2 x 1 reconstruction indicated that the H-plasma cleaned the bare Si regions. In addition, AFM measurements indicated that the Si and SiO2 surface rms roughnesses do not vary significantly due to the H-plasma exposure. It can be concluded from the RGA and AFM data that the remote H-plasma process at 450 C cleaned the surface and did not significantly react with either the Si or SiO2 regions.

  9. NiSi formation at the silicide/Si interface on the NiPt/Si system

    NASA Astrophysics Data System (ADS)

    Ottaviani, G.; Tu, K. N.; Chu, W. K.; Hung, L. S.; Mayer, J. W.

    1982-07-01

    Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700 °C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350 °C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400- 500 °C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700 °C, the Ni and Pt redistribute to form a uniform ternary.

  10. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    SciTech Connect

    Youngblood, G.E.; Henager, C.H.; Jones, R.H.

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  11. Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

  12. Si quantum dots and different aspects of applications

    NASA Astrophysics Data System (ADS)

    Torchynska, Tetyana V.

    2011-09-01

    This paper presents briefly the history of the study of Si quantum dot (QDs) structures and the advances of different applications of Si quantum dots (QDs) in quantum electronics, such as: Si QD light emitting diodes, Si QD solar cells and memory structures, Si QD based one electron devices and double QD structures for spintronics [1].

  13. Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer

    NASA Astrophysics Data System (ADS)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Utsunomiya, Shu; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-10-01

    In this report, we present a monolithic integration method for a Si-MOSFET and a GaN-LED onto a Si/SiO2/GaN-LED wafer as an elemental technology for monolithic optoelectronic integrated circuits. To enable a Si-MOSFET device process, we investigated the thermal tolerance of a thin top-Si and GaN-LED layer on a Si/SiO2/GaN-LED wafer. The high thermal tolerance of the Si/SiO2/GaN-LED structure allowed for the monolithic integration of a Si n-MOSFET and a GaN-µLED without degrading the performance of either device. A GaN-µLED driver circuit was fabricated using a Si n-MOSFET and a µLED of 30 × 30 µm2, with the modulation bandwidth of the circuit estimated to be over 10 MHz.

  14. Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface

    NASA Astrophysics Data System (ADS)

    Kim, Geun-Myeong; Oh, Young Jun; Chang, K. J.

    2013-12-01

    We perform first-principles density functional calculations to find the migration pathway and barrier for B diffusion at the Si/SiO2 interface. For various interface models, in which crystalline α-quartz or amorphous silica (a-SiO2) is placed on Si, we examine stable and metastable configurations of B-related defects which play a role in B diffusion. While a substitutional B alone is immobile in Si, it tends to diffuse to the interface via an interstitialcy mechanism in the presence of a self-interstitial and then changes into an interstitial B in oxide via a kick-out mechanism, leaving the self-interstitial at the interface. At the defect-free interface, where bridging O atoms are inserted to remove interface dangling bonds, an interstitial B prefers to intervene between the interface Si and bridging O atoms and subsequently diffuses through the hollow space or along the network of the Si-O-Si bonds in oxide. The overall migration barriers are calculated to be 2.02-2.12 eV at the Si/α-quartz interface, while they lie in the range of 2.04 ± 0.44 eV at the Si/a-SiO2 interface, similar to that in α-quartz. The migration pathway and barrier are not significantly affected by interface defects such as suboxide bond and O protrusion, while dangling bonds in the suboxide region can increase the migration barrier by about 1.5 eV. The result that the interface generally does not hinder the B diffusion from Si to SiO2 assists in understanding the underlying mechanism for B segregation which commonly occurs at the Si/SiO2 interface.

  15. Synthesis of Hybrid SiC/SiO2 Nanoparticles and Their Polymer Nanocomposites

    NASA Astrophysics Data System (ADS)

    Hassan, Tarig A.; Rangari, Vijaya K.; Baker, Fredric; Jeelani, Shaik

    2013-04-01

    In the present investigation, silicon carbide (β-SiC) nanoparticles ( 30 nm) were coated on silicon dioxide (SiO2) nanoparticles ( 200 nm) using sonochemical method. The resultant hybrid nanoparticles were then infused into SC-15 epoxy resin to enhance the thermal and mechanical properties of SC-15 epoxy for structural application. To fabricate an epoxy-based nanocomposite containing SiC/SiO2 hybrid nanoparticles, we have opted a two-step process. In the first step, the silica nanoparticles were coated with SiC nanoparticles using high intensity ultrasonic irradiation. In a second step, 1 wt.% of as-prepared SiC/SiO2 particles were dispersed in epoxy part-A (diglycidylether of bisphenol A) using a high intensity ultrasound for 30 min at 5°C. The part-B (cycloaliphatic amine hardener) of the epoxy was then mixed with part-A-SiC/SiO2 mixture using a high-speed mechanical stirrer for 10 min. The SiC/SiO2/epoxy resin mixture was cured at room temperature for 24 h. The SiC nanoparticles coating on SiO2 was characterized using X-ray diffraction (XRD) and high resolution transmission electron microscope (TEM). The as-prepared nanocomposite samples were characterized using thermo gravimetric analysis (TGA) and differential scanning calorimeter (DSC). Compression tests have been carried out for both nanocomposite and neat epoxy systems. The results indicated that 1 wt.% (SiC) + (SiO2) loading derived improvements in both thermal and mechanical properties when compared to the neat epoxy system.

  16. Modification of Mg{sub 2}Si in Mg–Si alloys with gadolinium

    SciTech Connect

    Ye, Lingying; Hu, Jilong Tang, Changping; Zhang, Xinming; Deng, Yunlai; Liu, Zhaoyang; Zhou, Zhile

    2013-05-15

    The modification effect of gadolinium (Gd) on Mg{sub 2}Si in the hypereutectic Mg–3 wt.% Si alloy has been investigated using optical microscope, scanning electron microscope, X-ray diffraction and hardness measurements. The results indicate that the morphology of the primary Mg{sub 2}Si is changed from coarse dendrite into fine polygon with the increasing Gd content. The average size of the primary Mg{sub 2}Si significantly decreases with increasing Gd content up to 1.0 wt.%, and then slowly increases. Interestingly, when the Gd content is increased to 4.0 and 8.0 wt.%, the primary and eutectic Mg{sub 2}Si evidently decrease and even disappear. The modification and refinement of the primary Mg{sub 2}Si is mainly attributed to the poisoning effect. The GdMg{sub 2} phase in the primary Mg{sub 2}Si is obviously coarsened as the Gd content exceeds 2.0 wt.%. While the decrease and disappearance of the primary and eutectic Mg{sub 2}Si are ascribed to the formation of vast GdSi compound. Therefore, it is reasonable to conclude that proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. - Highlights: ► Proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. ► We studied the reaction feasibility between Mg and Si, Gd and Si in Mg–Gd–Si system. ► We explored the modification mechanism of Gd modifier on Mg{sub 2}Si.

  17. Using Si in floriculture fertility programs

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Silicon (Si) is not considered to be an essential plant nutrient because most plant species can complete their life cycle without it. A clear benefit of Si for many ornamental crops has been reported including improved salt and drought tolerance, especially during post-harvest environments; stronger...

  18. LARC-SI Flatwire Twin Conduction Circuits

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Eight 2-line, L-shaped gold flex circuits have been imprinted on 1-mil LARC-SI. Each circuit was embedded in a space-applications trapezoidal truss made of carbon fiber reinforced resin composite (with protruding ends) to facilitate electrical connection of electronic devices mounted on the truss. LARC-SI is an advanced polymer highly suitable for multi layered electrical circuits.

  19. siRNA-Based Therapy Ameliorates Glomerulonephritis

    PubMed Central

    Shimizu, Hideki; Hori, Yuichi; Kaname, Shinya; Yamada, Koei; Nishiyama, Nobuhiro; Matsumoto, Satoru; Miyata, Kanjiro; Oba, Makoto; Yamada, Akira; Kataoka, Kazunori

    2010-01-01

    RNA interference by short interfering RNAs (siRNAs) holds promise as a therapeutic strategy, but use of siRNAs in vivo remains limited. Here, we developed a system to target delivery of siRNAs to glomeruli via poly(ethylene glycol)-poly(l-lysine)-based vehicles. The siRNA/nanocarrier complex was approximately 10 to 20 nm in diameter, a size that would allow it to move across the fenestrated endothelium to access to the mesangium. After intraperitoneal injection of fluorescence-labeled siRNA/nanocarrier complexes, we detected siRNAs in the blood circulation for a prolonged time. Repeated intraperitoneal administration of a mitogen-activated protein kinase 1 (MAPK1) siRNA/nanocarrier complex suppressed glomerular MAPK1 mRNA and protein expression in a mouse model of glomerulonephritis; this improved kidney function, reduced proteinuria, and ameliorated glomerular sclerosis. Furthermore, this therapy reduced the expression of the profibrotic markers TGF-β1, plasminogen activator inhibitor-1, and fibronectin. In conclusion, we successfully silenced intraglomerular genes with siRNA using nanocarriers. This technique could aid the investigation of molecular mechanisms of renal disease and has potential as a molecular therapy of glomerular diseases. PMID:20203158

  20. Photoluminescence of etched SiC nanowires

    NASA Astrophysics Data System (ADS)

    Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

    2010-10-01

    SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

  1. Reactive sintering of SiC

    NASA Technical Reports Server (NTRS)

    Kim, Y. W.; Lee, J. G.

    1984-01-01

    Investigation of the sintering processes involved in the sintering of SiC revealed a connection between the types and quantities of sintering additives or catalysts and densification, initial shrinkage, and weight loss of the sintered SiC material. By sintering processes, is meant the methods of mass transport, namely solid vapor transport and grain boundary diffusion.

  2. Infrared study of the concentration of H introduced into Si by the postdeposition annealing of a SiNx coating

    NASA Astrophysics Data System (ADS)

    Kleekajai, S.; Wen, L.; Peng, C.; Stavola, M.; Yelundur, V.; Nakayashiki, K.; Rohatgi, A.; Kalejs, J.

    2009-12-01

    The postdeposition annealing of a SiNx antireflection coating is commonly used to introduce hydrogen into a multicrystalline Si solar cell to passivate defects in the Si bulk. A quantitative comparison has been made of the concentrations of H that are introduced into a Si model system from SiNx coatings with high and low density that have been characterized by infrared spectroscopy. Experiments have also been performed in which the processing of the SiNx/Si interface was modified to compare how the preparation of the interface and properties of the SiNx film itself affect the concentration of H that is introduced into the Si bulk.

  3. Molecular-beam epitaxy of CrSi2 on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Grunthaner, P. J.; Lin, T. L.; Chang, K. T.; Mazur, J. H.

    1988-01-01

    The growth of CrSi2 on Si(111) in a commercial MBE system with a base pressure in the low 10 to the -11th torr range is reported. CrSi2 layers grown on Si(111) exhibit a strong tendency to form islands. Two particular epitaxial relationships are identified. Thick (210 nm) layers have been grown by four different techniques, with best results obtained by codepositing Cr and Si at elevated temperature. The grain size is observed to increase with substrate temperature, reaching 1-2 microns in a layer deposited at 825 C.

  4. Isotropic plasma etching of Ge Si and SiNx films

    DOE PAGESBeta

    Henry, Michael David; Douglas, Erica Ann

    2016-08-31

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  5. High Efficiency Hybrid Solar Cells Using Nanocrystalline Si Quantum Dots and Si Nanowires.

    PubMed

    Dutta, Mrinal; Thirugnanam, Lavanya; Trinh, Pham Van; Fukata, Naoki

    2015-07-28

    We report on an efficient hybrid Si nanocrystal quantum dot modified radial p-n junction thinner Si solar cell that utilizes the advantages of effective exciton collection by energy transfer from nanocrystal-Si (nc-Si) quantum dots to underlying radial p-n junction Si nanowire arrays with excellent carrier separation and propagation via the built-in electric fields of radial p-n junctions. Minimization of recombination, optical, and spectrum losses in this hybrid structure led to a high cell efficiency of 12.9%.

  6. Monolayer-induced band shifts at Si(100) and Si(111) surfaces

    SciTech Connect

    Mäkinen, A. J. Kim, Chul-Soo; Kushto, G. P.

    2014-01-27

    We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.

  7. High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rm's roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 micron gate lengths and 200 micron gate widths were fabricated and tested.

  8. Optical properties of SbSI heterostructures

    NASA Astrophysics Data System (ADS)

    Toroń, B.; Nowak, M.; Grabowski, A.; Kepńiska, M.; Szala, J.; Rzychoń, T.

    2012-10-01

    The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.

  9. Delivery materials for siRNA therapeutics

    NASA Astrophysics Data System (ADS)

    Kanasty, Rosemary; Dorkin, Joseph Robert; Vegas, Arturo; Anderson, Daniel

    2013-11-01

    RNA interference (RNAi) has broad potential as a therapeutic to reversibly silence any gene. To achieve the clinical potential of RNAi, delivery materials are required to transport short interfering RNA (siRNA) to the site of action in the cells of target tissues. This Review provides an introduction to the biological challenges that siRNA delivery materials aim to overcome, as well as a discussion of the way that the most effective and clinically advanced classes of siRNA delivery systems, including lipid nanoparticles and siRNA conjugates, are designed to surmount these challenges. The systems that we discuss are diverse in their approaches to the delivery problem, and provide valuable insight to guide the design of future siRNA delivery materials.

  10. NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Pagès, Xavier; Vanormelingen, Koen; Smits, Martin; Granneman, Ernst; Fujisawa, Masahiko; Hattori, Nobuyoshi

    2015-04-01

    Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010) ∥ Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010) ∥ Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010) ∥ Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration.

  11. Crystalline Na-Si(NN) derivatives [Si(NN)= Si((NCH2tBu)2C6H4-1,2)]: the silylenoid [Si(NN)OMe]-, the dianion [(NN)Si-Si(NN)]2-, and the radical anion c-[Si(NN)]3-.

    PubMed

    Antolini, Floria; Gehrhus, Barbara; Hitchcock, Peter B; Lappert, Michael F

    2005-10-28

    Reactions of the silylene Si[(NCH2Bu(t))2C6H4-1,2], [Si(NN)], with NaOMe, excess Na or 1/3 Na yield the X-ray-characterised crystalline compounds [Na(micro-Si(NN)OMe)(THF)(OEt2)]2 (2b), [Na(THF)2Si(NN)]2 (3) and [Na(THF)4][(Si(NN))3-c] (4).

  12. Gate leakage mechanisms in strained Si devices

    NASA Astrophysics Data System (ADS)

    Yan, L.; Olsen, S. H.; Kanoun, M.; Agaiby, R.; O'Neill, A. G.

    2006-11-01

    This work investigates gate leakage mechanisms in advanced strained Si /SiGe metal-oxide-semiconductor field-effect transistor (MOSFET) devices. The impact of virtual substrate Ge content, epitaxial material quality, epitaxial layer structure, and device processing on gate oxide leakage characteristics are analyzed in detail. In state of the art MOSFETs, gate oxides are only a few nanometers thick. In order to minimize power consumption, leakage currents through the gate must be controlled. However, modifications to the energy band structure, Ge diffusion due to high temperature processing, and Si /SiGe material quality may all affect gate oxide leakage in strained Si devices. We show that at high oxide electric fields where gate leakage is dominated by Fowler-Nordheim tunneling, tensile strained Si MOSFETs exhibit lower leakage levels compared with bulk Si devices. This is a direct result of strain-induced splitting of the conduction band states. However, for device operating regimes at lower oxide electric fields Poole-Frenkel emissions contribute to strained Si gate leakage and increase with increasing virtual substrate Ge content. The emissions are shown to predominantly originate from surface roughness generating bulk oxide traps, opposed to Ge diffusion, and can be improved by introducing a high temperature anneal. Gate oxide interface trap density exhibits a dissimilar behavior and is highly sensitive to Ge atoms at the oxidizing surface, degrading with increasing thermal budget. Consequently advanced strained Si /SiGe devices are inadvertently subject to a potential tradeoff between power consumption (gate leakage current) and device reliability (gate oxide interface quality).

  13. Nano-SiC/SiC anti-oxidant coating on the surface of graphite

    NASA Astrophysics Data System (ADS)

    Jafari, H.; Ehsani, N.; Khalifeh-Soltani, S. A.; Jalaly, M.

    2013-01-01

    In this research, a dual-layer coating has been used to improve high temperature oxidation resistance of graphite substrate. For first layer, silicon carbide was applied by pack cementation method. Powder pack consisted of Si, SiC and Al2O3 and heat-treated at 1650 °C in an argon atmosphere. SEM and XRD characterizations confirmed formation of SiC diffusion coating with about 500 μm including compositionally gradient of C and Si elements. Electrophoretic deposition (EPD) was used to deposit nano SiC (SiCn) particles as second layer. Thickness of second layer of SiCn in corresponded optimal situation was 50 μm. Samples with single and dual layers were investigated in oxidation test at 1600 °C. Results showed that an extreme increase was occurred in oxidation resistance after application of second layer of nano SiC. Weight loss value for single layer coating of SiC and dual layer coating of SiCn/SiC after oxidation test for 28 h at 1600 °C were 29 wt.% and 2.4 wt.%, respectively.

  14. Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

    PubMed Central

    2013-01-01

    This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range. PMID:23924368

  15. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  16. Nanoscale SiC production by ballistic ion beam mixing of C/Si multilayer structures

    NASA Astrophysics Data System (ADS)

    Battistig, G.; Zolnai, Z.; Németh, A.; Panjan, P.; Menyhárd, M.

    2016-05-01

    The ion beam-induced mixing process using Ar+, Ga+, and Xe+ ion irradiation has been used to form SiC rich layers on the nanometer scale at the interfaces of C/Si/C/Si/C multilayer structures. The SiC depth distributions were determined by Auger electron spectroscopy (AES) depth profiling and were compared to the results of analytical models developed for ballistic ion mixing and local thermal spike induced mixing. In addition, the measured SiC depth distributions were correlated to the Si and C mixing profiles simulated by the TRIDYN code which can follow the ballistic ion mixing process as a function of ion fluence. Good agreement has been found between the distributions provided by AES depth profiling and TRIDYN on the assumption that the majority of the Si (C) atoms transported to the neighboring C (Si) layer form the SiC compound. The ion beam mixing process can be successfully described by ballistic atomic transport processes. The results show that SiC production as a function of depth can be predicted, and tailored compound formation on the nanoscale becomes feasible, thus leading to controlled synthesis of protective SiC coatings at room temperature.

  17. Large scale fabrication of lightweight Si/SiC lidar mirrors

    NASA Astrophysics Data System (ADS)

    Goela, Jitendra Singh; Taylor, Raymond L.

    1989-10-01

    An up-scalable CVD process has been used to fabricate 7.5-cm models of lightweight Si/SiC mirrors consisting of an f/1.6 concave face-plate of SiC coated with CVD Si, in conjunction with a lightweight backup structure of SiC. Due to CVD chamber fabrication, no bonding agent was required to attach the SiC backup structure to the face-plate. Upon up-scaling, the SiC deposition process has been able to produce 40-cm diameter f/1.6 concave mirror face-plates. The mirrors were polished to a 1/5-wave figure and 10 A rms surface finish. There appear to be no intrinsic physical limits to further up-scaling of this mirror-fabrication process.

  18. Localization of electrons in dome-shaped GeSi/Si islands

    SciTech Connect

    Yakimov, A. I.; Kirienko, V. V.; Bloshkin, A. A.; Armbrister, V. A.; Kuchinskaya, P. A.; Dvurechenskii, A. V.

    2015-01-19

    We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n{sup +}-type bottom and top Si layers. An in-plane polarized photoresponse in the 85–160 meV energy region has been observed and ascribed to the optical excitation of electrons from states confined in the strained Si near the dome apexes to the continuum states of unstrained Si. The electron confinement is caused by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried GeSi quantum dots. Sensitivity of the device to the normal incidence radiation proves a zero-dimensional nature of confined electronic wave functions.

  19. Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations

    NASA Astrophysics Data System (ADS)

    Kasahara, Kiyotaka; Uchitomi, Naotaka; Shimizu, Takashi; Saki, Kazuo; Mizushima, Ichiro

    2008-06-01

    We investigated the formation of ˜1-3 nm ultrathin SiON films by the plasma nitridation of oxidized Si substrates having different orientations, namely, (100), (110), and (111). Oxidation was performed by dry, wet, and plasma oxidation processes with rapid thermal oxidation (RTO), in situ steam generation (ISSG), and a slot plane antenna (SPA), respectively. Nitridation was performed by a plasma nitridation process with SPA. The thickness of base SiO2 films prepared by a plasma oxide process was independent of substrate orientation unlike in the dry and wet oxidation processes. Furthermore, no significant discrepancy in nitrogen areal density was observed among the SiON films grown by the plasma nitridation of differently oriented oxidized Si substrates. Our results suggest that SiON films with arbitrary nitrogen densities and thicknesses can be prepared by oxidation and plasma nitridation irrespective of the Si substrate orientation.

  20. Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface.

    PubMed

    Bashouti, Muhammad Y; Yousefi, Peyman; Ristein, Jürgen; Christiansen, Silke H

    2015-10-01

    Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.

  1. Photoluminescence of SiO2 nanocomposite films implanted with Si+ and C+ ions

    NASA Astrophysics Data System (ADS)

    Buntov, E. A.; Zatsepin, A. F.; Bokizoda, D. A.

    2016-09-01

    The article is devoted to the photoluminescence (PL) of quantum dots in ion-beam synthesized SiO2:Si, SiO2:C and SiO2:Si:C thin film systems and its sensitization problem. Within the shape of the broad PL spectra for ion-modified films the bands corresponding to silicon and carbon-containing nanoclusters are detected, both with elementary (Si, C) and binary (SiC) composition. Various luminescence decay times of such components point to differences in the nature of the disorder and the local environment of the corresponding luminescence centers. The results indicate the possibility of controlling the spectral composition of the PL by varying the heat treatment conditions, and the dose of ion implantation. Possible ways are proposed for sensitization of the luminescence by means of molecular ions.

  2. Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface.

    PubMed

    Bashouti, Muhammad Y; Yousefi, Peyman; Ristein, Jürgen; Christiansen, Silke H

    2015-10-01

    Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids. PMID:26722904

  3. Si oxyhydrides on stain-etched porous Si thin films and correlation with crystallinity and photoluminescence

    NASA Astrophysics Data System (ADS)

    Steckl, A. J.; Xu, J.; Mogul, H. C.; Prokes, S. M.

    1995-05-01

    Porous Si has been fabricated from amorphous and polycrystalline Si films by stain-etching in HF:HNO3:H2O. Infrared transmission measurements have revealed an absorption peak at 880-890 cm(sup - 1) only in crystalline porous Si samples. This peak is probably due to an SiH2 bending mode in the presence of oxygen. Similarly, only crystalline PoSi films exhibit visible (approximately 650-670 nm) photoluminescence under UV excitation. Amorphous PoSi samples do not luminesce even after very long etch times, in spite of greatly increased porosity. Therefore, it appears that there exists a unique correlation between the presence of crystallinity in the starting Si film and the presence of surface oxyhydrides and photoluminescence after stain-etching.

  4. SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Robinson, Raymond C.; Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

    1999-01-01

    Silicon carbide (SiC) and Si3N4 materials were tested in various turbine engine combustion environments chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high-speed aircraft. Representative chemical vapor-deposited (CVD), sintered, and composite materials were evaluated by furnace and high-pressure burner rig exposures. Although protective SiO2 scales formed in all cases, the evidence presented supports a model based on paralinear growth kinetics (i.e., parabolic growth moderated simultaneously by linear volatilization). The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were thus used to map SiO2 volatility (and SiC recession) over a range of temperatures, pressures, and velocities. The functional dependency of material recession (volatility) that emerged followed the form A[exp(-Q / RT)](P(sup x)v(sup y). These empirical relations were compared with rates predicted from the thermodynamics of volatile SiO and SiOxHy reaction products and a kinetic model of diffusion through a moving boundary layer. For typical combustion conditions, recession of 0.2 to 2 micrometers/hr is predicted at 1200 to 1400 C, far in excess of acceptable long-term limits.

  5. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

    NASA Astrophysics Data System (ADS)

    Kunimune, Yorinobu; Shimada, Yasuhiro; Sakurai, Yusuke; Inoue, Masao; Nishida, Akio; Han, Bin; Tu, Yuan; Takamizawa, Hisashi; Shimizu, Yasuo; Inoue, Koji; Yano, Fumiko; Nagai, Yasuyoshi; Katayama, Toshiharu; Ide, Takashi

    2016-04-01

    We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO) stack structure using ultraviolet laser-assisted atom probe tomography (APT). The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %). Thus, by subtracting the concentration of adsorbed hydrogen, the actual hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA), which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale.

  6. Time-resolved photoluminescence of SiOx encapsulated Si

    NASA Astrophysics Data System (ADS)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  7. Inherent interface defects in thermal (211)Si/SiO{sub 2}:{sup 29}Si hyperfine interaction

    SciTech Connect

    Iacovo, Serena E-mail: andre.stesmans@fys.kuleuven.be; Stesmans, Andre E-mail: andre.stesmans@fys.kuleuven.be

    2014-10-21

    Low temperature electron spin resonance (ESR) studies were carried out on ‘higher index’ (211)Si/SiO{sub 2} interfaces thermally grown in the temperature range T{sub ox} = 400–1066°C. The data reveal the presence of two species of a P{sub b}-type interface defect, exhibiting a significant difference in defect density. On the basis of the pertinent ESR parameters and interface symmetry, the basic defect is typified as P{sub b0}{sup (211)}, close to the Pb0 center observed in standard (100)Si/SiO{sub 2}. The dominant type is found to pertain to defected Si atoms at (111)Si-face terraces with the dangling bond along the [111] direction at ∼19.5°C with the interface normal, these sites thus apparently predominantly accounting for interface mismatch adaptation. The total of the P{sub b}-type defect appearance clearly reflects the higher-index nature of the interface. It is found that T{sub ox} = 750°C is required to minimize the P{sub b0}{sup (211)} defect density through relaxation of the oxide (interface). Q-band ESR saturation spectroscopy reveals an anisotropic {sup 29}Si (nuclear spin I=1/2) hyperfine (hf) doublet associated with the central P{sub b0}{sup (211)} Zeeman signal, with hf parameters closest to those of the similar hf structure of the P{sub b0}{sup (110)} defect in thermal (110)Si/SiO{sub 2}, adducing independent support to the P{sub b0}{sup (211)} typification.

  8. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations

    NASA Astrophysics Data System (ADS)

    Nakajima, Kazuo; Ujihara, Toru; Usami, Noritaka; Fujiwara, Kozo; Sazaki, Gen; Shishido, Toetsu

    2004-01-01

    The strain, surface and interface energies of the SiGe/Si (SiGe grown on Si) heterostructure system with and without misfit dislocations were calculated for the Frank-van der Merwe (FM), Stranski-Krastanov (SK) and Volmer-Weber (VW) growth modes essentially based on the three kinds of fundamental and simple structures. The free energies for each growth mode were derived from these energies, and it was determined as a function of the composition and layer thickness of SiGe on Si. By comparison of the free energies, the phase diagrams of the FM, SK and VW growth modes for the SiGe/Si system were determined. The (1 1 1) and (1 0 0) reconstructed surfaces were selected for this calculation. From the phase diagrams, it was found for the growth of SiGe on Si that the layer-by-layer growth such as the FM mode was easy to be obtained when the Ge composition is small, and the island growth on a wetting layer such as the SK mode was easy to be obtained when the Ge composition is large. The VW mode is energetically stable in the Ge-rich compositional range, but it is difficult for the VW mode to appear in the actual growth of SiGe on Si because the VW region is right above the SK region. The regions of the SK and VW modes for the (1 1 1) heterostructure are larger than those for the (1 0 0) one because the strain energy of the (1 1 1) face is larger than that of the (1 0 0) face. The regions of the SK and VW modes for the heterostructure with misfit dislocations are narrower than those for the one without misfit dislocations because the strain energy is much released by misfit dislocations. The phase diagrams roughly explain the behavior of the FM and SK growth modes of SiGe on Si.

  9. On the peritectoid Ti{sub 3}Si formation in Ti-Si alloys

    SciTech Connect

    Ramos, Alfeu Saraiva . E-mail: alfeu@univap.br; Nunes, Carlos Angelo; Coelho, Gilberto Carvalho

    2006-03-15

    Ti-13.5Si and Ti-25Si (at.%) alloys have been arc-melted from high-purity raw materials, using a water-cooled copper hearth, a non-consumable tungsten electrode, and under an Ar atmosphere gettered by titanium. The cast ingots were then heat-treated for 90 h at 1000 and 1100 deg. C in an inert atmosphere, and both the as-cast and the heat-treated alloys were characterized using scanning electron microscopy and an energy dispersive microanalysis system. The as-cast Ti-13.5Si alloy presented a eutectic microstructure composed of the Ti{sub SS} and Ti{sub 5}Si{sub 3} phases, while the microstructure of the as-cast Ti-25Si alloy showed the presence of large primary precipitates of Ti{sub 5}Si{sub 3} in a eutectic matrix of Ti{sub SS} and Ti{sub 5}Si{sub 3}. Subsequent heat treatment at 1100 deg. C produced no significant microstructural modifications in the Ti-25Si alloy, and it is suggested that the presence of the large primary precipitates of Ti{sub 5}Si{sub 3} contributed to a reduction in the kinetics of Ti{sub 3}Si formation. In the Ti-13.5Si alloys, the formation of Ti{sub 3}Si was not observed after heat treatment at 1000 deg. C, but a large amount of Ti{sub 3}Si was found after heat treatment at 1100 deg. C, confirming its existence in Ti-Si alloys containing low interstitial contents.

  10. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    NASA Technical Reports Server (NTRS)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  11. Modeling Creep Effects within SiC/SiC Turbine Components

    NASA Technical Reports Server (NTRS)

    DiCarlo, J. A.; Lang, J.

    2008-01-01

    Anticipating the implementation of advanced SiC/SiC ceramic composites into the hot section components of future gas turbine engines, the primary objective of this on-going study is to develop physics-based analytical and finite-element modeling tools to predict the effects of constituent creep on SiC/SiC component service life. A second objective is to understand how to possibly select and manipulate constituent materials, processes, and geometries in order to minimize these effects. In initial studies aimed at SiC/SiC components experiencing through-thickness stress gradients, creep models were developed that allowed an understanding of detrimental residual stress effects that can develop globally within the component walls. It was assumed that the SiC/SiC composites behaved as isotropic visco-elastic materials with temperature-dependent creep behavior as experimentally measured in-plane in the fiber direction of advanced thin-walled 2D SiC/SiC panels. The creep models and their key results are discussed assuming state-of-the-art SiC/SiC materials within a simple cylindrical thin-walled tubular structure, which is currently being employed to model creep-related effects for turbine airfoil leading edges subjected to through-thickness thermal stress gradients. Improvements in the creep models are also presented which focus on constituent behavior with more realistic non-linear stress dependencies in order to predict such key creep-related SiC/SiC properties as time-dependent matrix stress, constituent creep and content effects on composite creep rates and rupture times, and stresses on fiber and matrix during and after creep.

  12. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ∼70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ∼10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2

  13. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ˜70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ˜10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2σ). Equilibrium

  14. Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

    SciTech Connect

    Amari, Shogo; Ichikawa, Masakazu; Nakamura, Yoshiaki

    2014-02-28

    We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

  15. Electrical Characteristics of Ni-CNT-SiO2-SiC Structured 4H-SiC MIS Capacitors.

    PubMed

    Lee, Taeseop; Kang, Min-Seok; Ha, Tae-Jun; Koo, Sang-Mo

    2015-10-01

    In this study, the electrical characteristics of Ni-CNT-SiO2-SiC structured 4H-SiC MIS capacitors were investigated. The effect of CNTs in the gate/insulator interface have been characterized by C-V measurement at 300 to 500K and J-V have also been measured. The experimental flat-band voltage tends to change with or without CNTs. Current densities of both devices are observed a negligible difference up to 3 V. It has been found that adding CNTs and/or change of temperature can help to control the positive and/or negative flat-band voltage shift.

  16. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal

    NASA Astrophysics Data System (ADS)

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-04-01

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates.

  17. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal

    PubMed Central

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-01-01

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates. PMID:27095071

  18. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal.

    PubMed

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-04-20

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates.

  19. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal.

    PubMed

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-01-01

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates. PMID:27095071

  20. Fabrication of crystal α-Si₃N₄/Si-SiOx core-shell/Au-SiOx peapod-like axial double heterostructures for optoelectronic applications.

    PubMed

    Nie, Tianxiao; Chen, Zhi-Gang; Wu, Yueqin; Guo, Yanan; Zhang, Jiuzhan; Fan, Yongliang; Yang, Xinju; Jiang, Zuimin; Zou, Jin

    2012-08-01

    Novel crystal α-Si(3)N(4)/Si-SiO(x) core-shell/Au-SiO(x) peapod-like axial double heterostructural nanowires were obtained by directly annealing a Au covered SiO(2) thin film on a Si substrate. Our extensive electron microscopic investigation revealed that the α-Si(3)N(4) sections with a mathematical left angle bracket 101 mathematical right angle bracket growth direction were grown first, followed by growth of the Si-SiO(x) core-shell sections and finally growth of the Au-SiO(x) peapod-like sections. Through a series of systematically comparative experiments, a temperature-dependent multi-step vapor-liquid-solid growth mechanism is proposed. Room temperature photoluminescence measurement of individual nanowires reveals two emission peaks (410 and 515 nm), indicating their potential applications in light sources, laser or light emitting display devices.

  1. Dependence of Morphology of SiOx Nanowires on the Supersaturation of Au-Si Alloy Liquid Droplets Formed on the Au-Coated Si Substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Han; Li, Ji-Xue; Jin, Ai-Zi; Zhang, Ze

    2001-11-01

    A thermodynamic theory about the dependence of morphology of SiOx nanowires on the super-saturation of alloy liquid droplets has been proposed on the basis of the vapour-liquid-solid growth mechanism and has been supported experimentally. By changing the Si concentration in the Au-Si liquid droplets formed on the Au-coated Si substrate, firework-, tulip- and bud-shaped SiOx nanowires were synthesized by a thermal evaporation method and distributed concentrically around some void defects in the Si substrate. Voids were formed underneath the surface of the Si substrate during the thermal evaporation at 850°C and resulted in the Si-concentration deficient thus different saturation of Au-Si droplets. Electron microscopy analysis showed that the nanowires had an amorphous structure and were terminated by Au-Si particles.

  2. Silicon photonics cloud (SiCloud)

    NASA Astrophysics Data System (ADS)

    DeVore, Peter T. S.; Jiang, Yunshan; Lynch, Michael; Miyatake, Taira; Carmona, Christopher; Chan, Andrew C.; Muniam, Kuhan; Jalali, Bahram

    2015-02-01

    We present SiCloud (Silicon Photonics Cloud), the first free, instructional web-based research and education tool for silicon photonics. SiCloud's vision is to provide a host of instructional and research web-based tools. Such interactive learning tools enhance traditional teaching methods by extending access to a very large audience, resulting in very high impact. Interactive tools engage the brain in a way different from merely reading, and so enhance and reinforce the learning experience. Understanding silicon photonics is challenging as the topic involves a wide range of disciplines, including material science, semiconductor physics, electronics and waveguide optics. This web-based calculator is an interactive analysis tool for optical properties of silicon and related material (SiO2, Si3N4, Al2O3, etc.). It is designed to be a one stop resource for students, researchers and design engineers. The first and most basic aspect of Silicon Photonics is the Material Parameters, which provides the foundation for the Device, Sub-System and System levels. SiCloud includes the common dielectrics and semiconductors for waveguide core, cladding, and photodetection, as well as metals for electrical contacts. SiCloud is a work in progress and its capability is being expanded. SiCloud is being developed at UCLA with funding from the National Science Foundation's Center for Integrated Access Networks (CIAN) Engineering Research Center.

  3. Si Wire-Array Solar Cells

    NASA Astrophysics Data System (ADS)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  4. Thermal transport in Si/Ge nanocomposites

    NASA Astrophysics Data System (ADS)

    Huang, Xiaopeng; Huai, Xiulan; Liang, Shiqiang; Wang, Xinwei

    2009-05-01

    In this paper, a systematic study is carried out to investigate the thermal transport in Si/Ge nanocomposites by using molecular dynamics simulation. Emphasis is placed on the effect of nanowire size, heat flux, Si/Ge interface, atomic ratio and defects (voids). The results show that the thermal conductivity of nanowire composites is much lower than that of alloy, which accounts mainly for ZT enhancement and owes a great deal to the effect of interface thermal resistance. A 'reflecting effect' in temperature distribution is observed at the Si/Ge interface, which is largely due to the lack of right quantum temperature correction in the region adjacent to the interface. The thermal conductivity of the nanocomposite is found to have weak dependence on the bulk temperature (200-900 K) and the heat flux in the range (0.5-3.5) × 1010 W m-2. Simulation results reveal that for a constant Si wire dimension, the thermal conductivity of the Si1-xGex nanocomposites increases with x. Our study on the influence of the defects (voids) has the same order of relative thermal conductivity reduction with increasing void density in comparison with the experimental data. Due to the small size (10 nm) of Si nanowires in our nanocomposites, the voids show less effect on thermal conductivity reduction in comparison with the experimental data with 100 nm Si wires.

  5. SiC-Based Gas Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak; Liu, C. C.; Wu, Q. H.

    1997-01-01

    Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at temperatures above 600 C. Recently, SiC semiconductors have been used in Schottky diode gas sensor structures. These sensors have been shown to be functional at temperatures significantly above the normal operating range of Si-based devices. SiC sensor operation at these higher temperatures allows detection of gases such as hydrocarbons which are not detectable at lower temperatures. This paper discusses the development of SiC-based Schottky diode gas sensors for the detection of hydrogen, hydrocarbons, and nitrogen oxides (NO(x)). Sensor designs for these applications are discussed. High sensitivity is observed for the hydrogen and hydrocarbon sensors using Pd on SiC Schottky diodes while the NO(x) sensors are still under development. A prototype sensor package has been fabricated which allows high temperature operation in a room temperature ambient by minimizing heat loss to that ambient. It is concluded that SiC-based gas sensors have considerable potential in a variety of gas sensing applications.

  6. siRNA and RNAi optimization.

    PubMed

    Alagia, Adele; Eritja, Ramon

    2016-05-01

    The discovery and examination of the posttranscriptional gene regulatory mechanism known as RNA interference (RNAi) contributed to the identification of small interfering RNA (siRNA) and the comprehension of its enormous potential for clinical purposes. Theoretically, the ability of specific target gene downregulation makes the RNAi pathway an appealing solution for several diseases. Despite numerous hurdles resulting from the inherent properties of siRNA molecule and proper delivery to the target tissue, more than 50 RNA-based drugs are currently under clinical testing. In this work, we analyze the recent literature in the optimization of siRNA molecules. In detail, we focused on describing the most recent advances of siRNA field aimed at optimize siRNA pharmacokinetic properties. Special attention has been given in describing the impact of RNA modifications in the potential off-target effects (OTEs) such as saturation of the RNAi machinery, passenger strand-mediated silencing, immunostimulation, and miRNA-like OTEs as well as to recent developments on the delivery issue. The novel delivery systems and modified siRNA provide significant steps toward the development of reliable siRNA molecules for therapeutic use. WIREs RNA 2016, 7:316-329. doi: 10.1002/wrna.1337 For further resources related to this article, please visit the WIREs website. PMID:26840434

  7. SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

    NASA Astrophysics Data System (ADS)

    Haiping, Shang; Qiuxia, Xu

    2010-05-01

    By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

  8. Si(hhm) surfaces: Templates for developing nanostructures

    SciTech Connect

    Bozhko, S. I. Ionov, A. M.; Chaika, A. N.

    2015-06-15

    The fabrication of ordered low-dimensional structures on clean and metal-atom-decorated stepped Si(557) and Si(556) surfaces is discussed. The formation conditions and atomic structure of regular step systems on clean Si(557) 7 × 7 and Si(556) 7 × 7 surfaces are studied. The atomic structure of stepped Si(hhm), Ag/Si(557), and Gd/Si(557) surfaces is studied using high-resolution scanning tunneling microscopy and low-energy electron diffraction. The possibility of fabricating 1D and 2D structures of gadolinium and silver atoms on the Si(557) surface is demonstrated.

  9. SiC for Space Optics

    NASA Astrophysics Data System (ADS)

    Wellman, John

    2012-01-01

    This paper describes SiC mirrors that are large, ultra-lightweight, and actively controlled, for use in space telescopes. "Advanced Hybrid Mirrors” (AHMs) utilize SiC substrates, with embedded solid-state actuators, bonded to Nanolaminate metal foil reflective surfaces. They use replication techniques for high optical quality as well as rapid, low cost manufacturing. AHMs up to 1.35m in size have been made and tested, demonstrating wavefront error to better than the visible diffraction limit. AHMs can be fabricated at production rates after the first unit delivery as fast as 48 day intervals. "Superpolished Si/SiC Active Mirrors” (SSAMs) are similar to AHMs but the SiC mirror substrates have a layer of Si deposited on them to enable direct superpolishing. SSAMs can be much larger, can operate over a wider temperature range, and are better suited to UV astronomy. To make SSAMs larger than 1.8 m, multiple substrates can be joined together, using brazing techniques. Using wavefront sensing and control technology to command the embedded solid-state actuators, final mirror figure will be set after launch. This gives the active SiC mirror the ability to correct nearly any optical error, occurring anywhere in the optical system. As a result, active SiC mirrors can be made to relaxed figure requirements, enabling optical replication, or speeding up polishing, while assuring excellent final performance. Active SiC mirrors will reduce cost, risk and schedule for future astrophysics missions. Their high control authority allows relaxation of fabrication and assembly tolerances from optical to mechanical levels, speeding I & T. They enable rapid system testing to within required performance levels, even in 1 G, lowering mission risk. They are lighter weight and more durable than glass mirrors.

  10. Mo-Si-B Alloy Development

    SciTech Connect

    Schneibel, J.H.; Kruzie, J.J.; Ritchie, R.O.

    2003-04-24

    Mo-Si-B silicides consisting of the phases {alpha}-Mo (Mo solid solution), Mo{sub 3}Si, and Mo{sub 5}SiB{sub 2} have melting points on the order of 2000 C and have potential as ultra-high temperature structural materials. Mo-Si-B alloys can be processed such that the {alpha}-Mo is present in the form of isolated particles in a silicide matrix, or as a continuous matrix ''cementing'' individual silicide particles together. The latter microstructure is similar to that of WC-Co hard metals. This paper focuses on the relationship between the topology as well as scale of the microstructure of Mo-Mo{sub 3}Si-Mo{sub 5}SiB{sub 2} alloys, and their creep strength and fracture toughness. For example, the creep strength of Mo-Si-B alloys is improved by reducing the {alpha}-Mo volume fraction and by making the {alpha}-Mo phase discontinuous. The fracture toughness is improved by increasing the {alpha}-Mo volume fraction and by making the {alpha}-Mo phase continuous. Room temperature stress intensity factors as high as 21 MPa m{sup 1/2} were obtained. The room temperature fracture toughness of Mo-Si-B alloys can also be improved by microalloying with Zr. The room temperature ductility of Mo itself can be improved by adding MgAl{sub 2}O{sub 4} spinel particles suggesting yet another way to improve the ductile phase toughening of Mo-Si-B alloys.

  11. Interstitial Functionalization in elemental Si

    NASA Astrophysics Data System (ADS)

    Kiefer, Boris; Fohtung, Edwin

    Societies in the 21st century will face many challenges. Materials science and materials design will be essential to address and master some if not all of these challenges. Semiconductors are among the most important technological material classes. Properties such as electrical transport are strongly affected by defects and a central goal continues to be the reduction of defect densities as much as possible in these compounds. Here we present results of interstitial Fe doping in elemental Si using first-principles DFT calculations. The preliminary results show that Fe will only occupy octahedral interstitial sites. The analysis of the electronic structure shows that the compounds are ferromagnetic and that a bandgap opens as interstitial Fe concentrations decrease, with a possible intermittent semi-metallic phase. The formation energy for interstitial Fe is unfavorable, as expected, by ~1.5 eV but becomes favorable as the chemical potential of Fe increases. Therefore, we expect that biasing the system with an external electrical field will lead to the formation of these materials. Thus, our results show that interstitial defects can be beneficial for the design of functionalities that differ significantly from those of the host material.

  12. Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides.

    PubMed

    Maegami, Yuriko; Okano, Makoto; Cong, Guangwei; Ohno, Morifumi; Yamada, Koji

    2016-07-25

    For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO2 spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-μm mode field diameter. A coupled waveguide system with the SiN waveguide and Si taper waveguide can provide low-loss and low-polarization-dependent mode conversion. Both losses in fiber-SiN waveguide coupling and SiN-Si waveguide mode conversion are no more than 1 dB in a wide wavelength bandwidth from 1.36 μm to 1.65 μm. Through a detailed analysis of the effective refractive indices in the coupled waveguide system, we can understand mode conversion accurately and also derive guidelines for reducing the polarization dependence and for shortening device length. PMID:27464137

  13. Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides.

    PubMed

    Maegami, Yuriko; Okano, Makoto; Cong, Guangwei; Ohno, Morifumi; Yamada, Koji

    2016-07-25

    For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO2 spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-μm mode field diameter. A coupled waveguide system with the SiN waveguide and Si taper waveguide can provide low-loss and low-polarization-dependent mode conversion. Both losses in fiber-SiN waveguide coupling and SiN-Si waveguide mode conversion are no more than 1 dB in a wide wavelength bandwidth from 1.36 μm to 1.65 μm. Through a detailed analysis of the effective refractive indices in the coupled waveguide system, we can understand mode conversion accurately and also derive guidelines for reducing the polarization dependence and for shortening device length.

  14. The roles of Eu during the growth of eutectic Si in Al-Si alloys

    PubMed Central

    Li, Jiehua; Hage, Fredrik; Wiessner, Manfred; Romaner, Lorenz; Scheiber, Daniel; Sartory, Bernhard; Ramasse, Quentin; Schumacher, Peter

    2015-01-01

    Controlling the growth of eutectic Si and thereby modifying the eutectic Si from flake-like to fibrous is a key factor in improving the properties of Al-Si alloys. To date, it is generally accepted that the impurity-induced twinning (IIT) mechanism and the twin plane re-entrant edge (TPRE) mechanism as well as poisoning of the TPRE mechanism are valid under certain conditions. However, IIT, TPRE or poisoning of the TPRE mechanism cannot be used to interpret all observations. Here, we report an atomic-scale experimental and theoretical investigation on the roles of Eu during the growth of eutectic Si in Al-Si alloys. Both experimental and theoretical investigations reveal three different roles: (i) the adsorption at the intersection of Si facets, inducing IIT mechanism, (ii) the adsorption at the twin plane re-entrant edge, inducing TPRE mechanism or poisoning of the TPRE mechanism, and (iii) the segregation ahead of the growing Si twins, inducing a solute entrainment within eutectic Si. This investigation not only demonstrates a direct experimental support to the well-accepted poisoning of the TPRE and IIT mechanisms, but also provides a full picture about the roles of Eu atoms during the growth of eutectic Si, including the solute entrainment within eutectic Si. PMID:26328541

  15. The roles of Eu during the growth of eutectic Si in Al-Si alloys.

    PubMed

    Li, Jiehua; Hage, Fredrik; Wiessner, Manfred; Romaner, Lorenz; Scheiber, Daniel; Sartory, Bernhard; Ramasse, Quentin; Schumacher, Peter

    2015-09-02

    Controlling the growth of eutectic Si and thereby modifying the eutectic Si from flake-like to fibrous is a key factor in improving the properties of Al-Si alloys. To date, it is generally accepted that the impurity-induced twinning (IIT) mechanism and the twin plane re-entrant edge (TPRE) mechanism as well as poisoning of the TPRE mechanism are valid under certain conditions. However, IIT, TPRE or poisoning of the TPRE mechanism cannot be used to interpret all observations. Here, we report an atomic-scale experimental and theoretical investigation on the roles of Eu during the growth of eutectic Si in Al-Si alloys. Both experimental and theoretical investigations reveal three different roles: (i) the adsorption at the intersection of Si facets, inducing IIT mechanism, (ii) the adsorption at the twin plane re-entrant edge, inducing TPRE mechanism or poisoning of the TPRE mechanism, and (iii) the segregation ahead of the growing Si twins, inducing a solute entrainment within eutectic Si. This investigation not only demonstrates a direct experimental support to the well-accepted poisoning of the TPRE and IIT mechanisms, but also provides a full picture about the roles of Eu atoms during the growth of eutectic Si, including the solute entrainment within eutectic Si.

  16. High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation

    SciTech Connect

    Weishart, H.; Eichhorn, F.; Heera, V.; Pecz, B.; Barna, A.; Skorupa, W.

    2005-08-15

    In this paper the authors investigate the effect of implantation temperature on the structural properties of diamond implanted with high fluences of Si between 5.3x10{sup 17} Si cm{sup -2} and 1x10{sup 18} Si cm{sup -2}. In order to reduce radiation-induced damage and to enhance SiC formation the implantations were performed at elevated temperatures in the range from 900 to 1200 deg. C. Subsequently, all samples were annealed for 10 min at 1500 deg. C in a rf-heated furnace. X-ray diffraction revealed the formation of cubic SiC nanocrystallites in a buried layer inside the implanted diamond. The implantation-induced damage was assessed by analyzing graphitization of the surface-near layer using Raman spectroscopy. With increasing Si fluence the implantation-induced damage rises and the nearly perfect alignment of the formed SiC crystallites within the host diamond lattice deteriorates. However, raising the implantation temperature from 900 to 1000 deg. C reduces the damage in the diamond and increases the amount, size, and epitaxial alignment of the crystalline SiC precipitates. Further increase of the implantation temperature gives no improvement in the quality of the SiC-rich layer. Instead, the damaged diamond converts into graphite and the formation of SiC crystallites is obstructed.

  17. Refinement of primary Si grains in Al-20%Si alloy slurry through serpentine channel pouring process

    NASA Astrophysics Data System (ADS)

    Zheng, Zhi-kai; Mao, Wei-min; Liu, Zhi-yong; Wang, Dong; Yue, Rui

    2016-05-01

    In this study, a serpentine channel pouring process was used to prepare the semi-solid Al-20%Si alloy slurry and refine primary Si grains in the alloy. The effects of the pouring temperature, number of curves in the serpentine channel, and material of the serpentine channel on the size of primary Si grains in the semi-solid Al-20%Si alloy slurry were investigated. The results showed that the pouring temperature, number of the curves, and material of the channel strongly affected the size and distribution of the primary Si grains. The pouring temperature exerted the strongest effect, followed by the number of the curves and then the material of the channel. Under experimental conditions of a four-curve copper channel and a pouring temperature of 701°C, primary Si grains in the semi-solid Al-20%Si alloy slurry were refined to the greatest extent, and the lath-like grains were changed into granular grains. Moreover, the equivalent grain diameter and the average shape coefficient of primary Si grains in the satisfactory semi-solid Al-20%Si alloy slurry were 24.4 μm and 0.89, respectively. Finally, the refinement mechanism and distribution rule of primary Si grains in the slurry prepared through the serpentine channel pouring process were analyzed and discussed.

  18. Si-Si bond as a deep trap for electrons and holes in silicon nitride

    NASA Astrophysics Data System (ADS)

    Karpushin, A. A.; Sorokin, A. N.; Gritsenko, V. A.

    2016-02-01

    A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si3N4 has been proposed. The electronic structure of a "Si-Si bond" intrinsic defect in Si3N4 has been calculated in the tight-binding approximation without fitting parameters. The properties of the Si-Si bond such as a giant cross section for capture of electrons and holes and a giant lifetime of trapped carriers have been explained. It has been shown that the Si-Si bond in the neutral state gives shallow levels near the bottom of the conduction band and the top of the valence band, which have a large cross section for capture. The capture of an electron or a hole on this bond is accompanied by the shift of shallow levels by 1.4-1.5 eV to the band gap owing to the polaron effect and a change in the localization region of valence electrons of atoms of the Si-Si bond. The calculations have been proposed with a new method for parameterizing the matrix elements of the tightbinding Hamiltonian taking into account a change in the localization region of valence electrons of an isolated atom incorporated into a solid.

  19. Structural phase transitions in Si and SiO2 crystals via the random phase approximation

    NASA Astrophysics Data System (ADS)

    Xiao, Bing; Sun, Jianwei; Ruzsinszky, Adrienn; Feng, Jing; Perdew, John P.

    2012-09-01

    We have assessed the performance of the non-self-consistent random phase approximation (RPA) on two pressure-induced structural phase transitions, diamond to β-Sn Si in Si and α-quartz to stishovite in SiO2. The calculated equilibrium lattice properties of the four structures are in better agreement with experimental results than are those from several semilocal functionals. The energy differences between the high- and low-pressure phases are found to be 0.37 eV/Si and 0.39 eV/SiO2, respectively. The transition pressure obtained from our RPA calculations for diamond to β-Sn in Si is 12.2 GPa, in excellent agreement with the experimental value 11.3-12.6 GPa. However, the α-quartz to stishovite phase-transition pressure in SiO2 is found to be 5.6 GPa, lower than the experimental 7.46 GPa; the Perdew-Burke-Ernzerhof (PBE) semilocal functional gives the transition pressure closest to experiment in this case. We conclude that the non-self-consistent, nonlocal RPA accurately describes the insulator-to-metal transition in Si, where semilocal density functionals tend to fail. But the RPA error cancellation that is nearly perfect in many solids, including Si, may be less perfect in solid SiO2, as it is in many molecules.

  20. An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters.

    PubMed

    Liu, Chun-Yi; Li, Wun-Shan; Chu, Li-Wei; Lu, Ming-Yen; Tsai, Cho-Jen; Chen, Lih-Juann

    2011-02-01

    A method was developed to grow ordered silicon nanowire with NiSi(2) tip arrays by reacting nickel thin films on silica-coated ordered Si nanowire (NW) arrays. The coating of thin silica shell on Si NW arrays has the effect of limiting the diffusion of nickel during the silicidation process to achieve the single crystalline NiSi(2) NWs. In the meantime, it relieves the distortion of the NWs caused by the strain associated with formation of NiSi(2) to maintain the straightness of the nanowire and the ordering of the arrays. Other nickel silicide phases such as Ni(2)Si and NiSi were obtained if the silicidation processes were conducted on the ordered Si NWs without a thin silica shell. Excellent field emission properties were found for NiSi(2)/Si NW arrays with a turn on field of 0.82 V µm(-1) and a threshold field of 1.39 V µm(-1). The field enhancement factor was calculated to be about 2440. The stability test showed a fluctuation of about 7% with an applied field of 2.6 V µm(-1) for a period of 24 h. The excellent field emission characteristics are attributed to the well-aligned and highly ordered arrangement of the single crystalline NiSi(2)/Si heterostructure field emitters. In contrast to other growth methods, the present growth of ordered nickel silicide/Si NWs on silicon is compatible with silicon nanoelectronics device processes, and also provides a facile route to grow other well-aligned metal silicide NW arrays. The advantages will facilitate its applications as field emission devices. PMID:21178255

  1. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

    NASA Astrophysics Data System (ADS)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-01-01

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ~20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  2. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    PubMed

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-01

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  3. Process-Induced Carbon and Sub-Layer in SiC/BN/SiC Composites: Characterization and Consequences

    NASA Technical Reports Server (NTRS)

    Ogbuji, L. U. J. T; Wheeler, D. R.; McCue, T. R.

    2001-01-01

    Following our detection of films of elemental carbon in the Hi-Nicalon TM/BN/SiC composite and its deleterious effect on oxidative durability, we have examined other SiC/BN/SiC systems. The problem is pervasive, and significant residues of free carbon are confirmed in Sylramic /BN/SiC materials. Effective techniques for routine detection and characterization of adventitious carbon in SiC/BN/SiC composites are discussed.

  4. Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.

    PubMed

    Chen, Xin; Zuo, Daniel; Kim, Seongwon; Mabon, James; Sardela, Mauro; Wen, Jianguo; Zuo, Jian-Min

    2014-10-01

    We demonstrate the combined use of large area depth-profiling dislocation imaging and quantitative composition and strain measurement for a strained Si/SiGe/Si sample based on nondestructive techniques of electron beam-induced current (EBIC) and X-ray diffraction reciprocal space mapping (XRD RSM). Depth and improved spatial resolution is achieved for dislocation imaging in EBIC by using different electron beam energies at a low temperature of ~7 K. Images recorded clearly show dislocations distributed in three regions of the sample: deep dislocation networks concentrated in the "strained" SiGe region, shallow misfit dislocations at the top Si/SiGe interface, and threading dislocations connecting the two regions. Dislocation densities at the top of the sample can be measured directly from the EBIC results. XRD RSM reveals separated peaks, allowing a quantitative measurement of composition and strain corresponding to different layers of different composition ratios. High-resolution scanning transmission electron microscopy cross-section analysis clearly shows the individual composition layers and the dislocation lines in the layers, which supports the EBIC and XRD RSM results.

  5. A New Ordered Si/SiO2 phase: Infrared Spectroscopy Analysis and Modeling

    NASA Astrophysics Data System (ADS)

    Bradley, J.; Herbots, N.; Shaw, J.; Atluri, V.; Queeney, K. T.; Chabal, Y. J.

    2003-10-01

    A new ordered Si/SiO2 phase is grown by conventional oxidation on ordered, OH-terminated (1x1)Si(100) surfaces formed at room temperature in ambient using a wet chemical cleaning method [1, 2] combined with conventional oxidation. Si atoms within 1-2.5 nm thick SiO2 are found to be in registry with respect to Si atoms in the Si(100). The degree of ordering is characterized by combining ion channeling with nuclear resonance analysis, as well as Reflective High Energy Electron Diffraction (RHEED), and High Resolution Transmission Electron Microscopy (HRTRM) and is found to be confined to a 2nm region in the SiO2[1]. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Elastic Recoil Deflection (ERD) were used to profile silicon, oxygen, carbon, and hydrogen coverage within the ordered interphase. Most recently, infrared spectroscopy [2] was employed to investigate the bonding at the ordered Si/SiO2 interface and compare the suboxides region to conventional thermal oxides. Infrared spectroscopy shows that the TO red-shift due to SiOx cross-bonding at the Si/SiO2 interface is 50 % smaller and occurs more abruptly than in conventional thermal oxides. This indicates a more homogeneous bonding environment between Si and SiO2, which is consistent with the presence of an ordered phase. Using these results, we are modeling the structure of the 2 nm interphase with 3DSTRING [3]. This Monte Carlo Simulation enables us to compare the channeling spectra with the experimental data for the possible phase configuration in ordered SiOx on Si. [1] N. Herbots, V. Atluri, J. D. Bradley, J. Xiang, S. Banerjee, Q.Hurst, US Patent #6,613,677, Granted 9/2/2003 [2] N. Herbots, J. M. Shaw, Q. B. Hurst, M. P. Grams, R. J. Culbertson, D. J. Smith, V. Atluri, P. Zimmerman, and K. T. Queeney, Mat. Sci. Eng. B B87, 303-316 (2001). [3] K. T. Queeney, N. Herbots, Justin, M. Shaw, V. Atluri, Y. J. Chabal (to be published)

  6. Advanced Environmental Barrier Coatings Developed for SiC/SiC Composite Vanes

    NASA Technical Reports Server (NTRS)

    Lee, Kang N.; Fox, Dennis S.; Eldridge, Jeffrey I.; Zhu, Dongming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    Ceramic components exhibit superior high-temperature strength and durability over conventional component materials in use today, signifying the potential to revolutionize gas turbine engine component technology. Silicon-carbide fiber-reinforced silicon carbide ceramic matrix composites (SiC/SiC CMCs) are prime candidates for the ceramic hotsection components of next-generation gas turbine engines. A key barrier to the realization of SiC/SiC CMC hot-section components is the environmental degradation of SiC/SiC CMCs in combustion environments. This is in the form of surface recession due to the volatilization of silica scale by water vapor. An external environmental barrier coating (EBC) is a logical approach to achieve protection and long-term durability.

  7. Nucleation and growth of CrSi2 on Si(111)

    NASA Astrophysics Data System (ADS)

    Fathauer, R. W.; Grunthaner, P. J.; Lin, T. L.; Chang, K. T.; Mazur, J. H.

    The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.

  8. SiC/Si3N4 nanotubes from peanut shells

    NASA Astrophysics Data System (ADS)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, C. R.

    2016-06-01

    Nanotubes and nanoparticles of SiC and Si3N4 were produced from the thermal treatment of peanut shells in argon and nitrogen atmospheres respectively, at temperatures in excess of 1350°C. Using x-ray diffraction, Raman spectroscopy and transmission electron microscopy analysis, the processed samples in argon atmosphere were shown to consist of 2H and 3C polytypes of SiC nanoparticles and nanotubes. Whereas the samples prepared in nitrogen atmosphere consisted of α-phase of Si3N4. Nanostructures formed by a single direct reaction provide a sustainable synthesis route for nanostructured SiC and Si3N4, for potential engineering applications due to their exceptional mechanical and electro-optic properties.

  9. Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice

    NASA Astrophysics Data System (ADS)

    Nishiguchi, Katsuhiko; Yoshizumi, Daisuke; Sekine, Yoshiaki; Furukawa, Kazuaki; Fujiwara, Akira; Nagase, Masao

    2016-10-01

    We have fabricated a planar cold cathode based on a multilayer (ML)-graphene/SiO2/Si heterostructure. When voltage is applied between the ML graphene and Si layer, electrons tunnel from the Si layer to the ML-graphene through the SiO2. During this tunneling event, electrons repeatedly gain and lose energy in the SiO2 owing to the electric field and scattering, respectively. Electrons whose energy is larger than the work function of the ML-graphene are emitted from its surface to a vacuum. The thinness of the ML-graphene reduces the energy loss of electrons in it and thus improves electron emission characteristics.

  10. Disilicon complexes with two hexacoordinate Si atoms: paddlewheel-shaped isomers with (ClN4 )Si-Si(S4 Cl) and (ClN2 S2 )Si-Si(S2 N2 Cl) skeletons.

    PubMed

    Wagler, Jörg; Brendler, Erica; Heine, Thomas; Zhechkov, Lyuben

    2013-10-11

    The reaction of 1-methyl-3-trimethylsilylimidazoline-2-thione with hexachlorodisilane proceeds toward substitution of four of the disilane Cl atoms during the formation of disilicon complexes with two neighboring hexacoordinate Si atoms. The N,S-bidentate methimazolide moieties adopt a buttressing role, thus forming paddlewheel-shaped complexes of the type ClSi(μ-mt)4 SiCl (mt=methimazolyl). Most interestingly, three isomers (i.e., with (ClN4 )SiSi(S4 Cl), (ClN3 S)SiSi(S3 NCl), and (ClN2 S2 )SiSi(S2 N2 Cl) skeletons as so-called (4,0), (3,1), and cis-(2,2) paddlewheels) were detected in solution by using (29) Si NMR spectroscopic analysis. Two of these isomers could be isolated as crystalline solids, thus allowing their molecular structures to be analyzed by using X-ray diffraction studies. In accord with time-dependent NMR spectroscopy, computational analyses proved the cis-(2,2) isomer with a (ClN2 S2 )SiSi(S2 N2 Cl) skeleton to be the most stable. The compounds presented herein are the first examples of crystallographically evidenced disilicon complexes with two SiSi-bonded octahedrally coordinated Si atoms and representatives of the still scarcely explored class of Si coordination compounds with sulfur donor atoms.

  11. Solute embrittlement of SiC

    NASA Astrophysics Data System (ADS)

    Enrique, Raúl A.; Van der Ven, Anton

    2014-09-01

    The energies and stresses associated with the decohesion of β-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  12. SI Units? A Camel is a Camel.

    ERIC Educational Resources Information Center

    Adamson, Arthur W.

    1978-01-01

    This paper is a summary of remarks made at a recent symposium on new directions in the teaching of physical chemistry. The author takes exception to the claims made for the International System of Units (SI). (HM)

  13. Si-based Nanoparticles: a biocompatibility study

    NASA Astrophysics Data System (ADS)

    Rivolta, I.; Lettiero, B.; Panariti, A.; D'Amato, R.; Maurice, V.; Falconieri, M.; Herlein, N.; Borsella, E.; Miserocchi, G.

    2010-10-01

    Exposure to silicon nanoparticles (Si-NPs) may occur in professional working conditions or for people undergoing a diagnostic screening test. Despite the fact that silicon is known as a non-toxic material, in the first case the risk is mostly related to the inhalation of nanoparticles, thus the most likely route of entry is across the lung alveolar epithelium. In the case of diagnostic imaging, nanoparticles are usually injected intravenously and Si-NPs could impact on the endothelial wall. In our study we investigated the interaction between selected Si-based NPs and an epithelial lung cell line. Our data showed that, despite the overall silicon biocompatibility, however accurate studies of the potential toxicity induced by the nanostructure and engineered surface characteristics need to be accurately investigated before Si nanoparticles can be safely used for in vivo applications as bio-imaging, cell staining and drug delivery.

  14. Solute embrittlement of SiC

    SciTech Connect

    Enrique, Raúl A.; Van der Ven, Anton

    2014-09-21

    The energies and stresses associated with the decohesion of β-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  15. Heterogeneous integration of SiGe/Ge and III-V for Si photonics

    NASA Astrophysics Data System (ADS)

    Takenaka, Mitsuru; Kim, Younghyun; Han, Jaehoon; Kang, Jian; Ikku, Yuki; Cheng, Yongpeng; Park, Jinkwon; Takagi, Shinichi

    2016-05-01

    The heterogeneous integration of SiGe/Ge and III-V semiconductors gives us an opportunity to enhance functionalities of Si photonics platform through their superior material properties which lack in Si. In this paper we discuss what SiGe/Ge and III-V can bring to Si photonics. We have predicted that the light effective hole mass in strained SiGe results in the enhanced the free-carrier effects such as the plasma dispersion effect and free-carrier absorption. We observed significantly larger free-carrier absorption in the SiGe optical modulator than in the control Si device. By fabricating asymmetric Mach-Zehnder interferometer (MZI) SiGe optical modulators, the enhancement of the plasma dispersion effect in strained SiGe has been successfully demonstrated. Mid-infrared integrated photonics based on Ge waveguides on Si have also been investigated. Since Ge is transparent to the entire mid-infrared range, Ge photonic integrated circuits on the Ge-on-Insulator (GeOI) wafer are quite attractive. We have successfully fabricated the GeOI wafer with 2-μm-thick buried oxide (BOX) layer by wafer bonding. The passive waveguide components based on Ge strip waveguides have been demonstrated on the GeOI. We have also demonstrated carrier-injection Ge variable optical attenuators. We have proposed and investigate the III-V CMOS photonics platform by using the III-V on Insulator (IIIV- OI) on a Si wafer. The strong optical confinement in the III-V-OI enables us to achieve high-performance photonic devices. We have successfully demonstrated InGaAsP MZI optical switch with the low on-state crosstalk on the III-V-OI. Ultra-low dark current waveguide InGaAs PDs integrated with an InP grating coupler are also achieved.

  16. B Removal by Zr Addition in Electromagnetic Solidification Refinement of Si with Si-Al Melt

    NASA Astrophysics Data System (ADS)

    Lei, Yun; Ma, Wenhui; Sun, Luen; Dai, Yongnian; Morita, Kazuki

    2016-02-01

    This study investigated a new process of enhancing B removal by adding small amounts of Zr in the electromagnetic solidification refinement of Si with Si-Al melt. B in Si was removed by as much as 97.2 pct by adding less than 1057 ppma Zr, and the added Zr was removed by as much as 99.7 pct. In addition, Zr is more effective in enhancing B removal than Ti in the same electromagnetic solidification refining process.

  17. Processing and characterization of SiC platelet/SiC composites

    SciTech Connect

    Cao, J.J.; MoberlyChan, W.J.; De Jonghe, L.C.; Dalgleish, B.; Niu, M.Y.

    1995-03-01

    Hot pressed {beta}-SiC and SiC matrix composites containing encapsulated {alpha}-SiC platelets were prepared and investigated. The Microstructures were characterized using electron microscopy, Auger electron spectroscopy, and x-ray diffraction. Prior to hot pressing, the platelets were either encapsulated with hydrated aluminum sulfate or yttrium hydroxycarbonate (later calcined to form alumina or yttria) from aqueous solutions, or oxidized to form a silica layer. The effect of these interfacial layers on toughness was described.

  18. Energy-resolved study of laser-stimulated Si + desorption from Si(1 0 0)

    NASA Astrophysics Data System (ADS)

    Liu, H. T.; Wu, Z.

    1995-06-01

    An energy-resolved study of Si + desorption from Si(1 0 0) under the irradiation of low fluence 193 nm pulsed laser beam is made using high resolution mass-selected time-of-flight (TOF) technique. New features in the kinetic energy distribution of desorbed Si ions have been observed. A simple DIET model is found to provide a reasonably good understanding for the main features in the TOF spectra.

  19. Instrumented Sheath Insulator Experiment (IFAC-SI)

    NASA Astrophysics Data System (ADS)

    Lee, Celia; Miskolczy, Gabor; Lieb, David P.; Witt, Tony

    The Instrumented Fast-Reactor Accelerated Component-Sheath Insulator test (IFAC-SI) is a key experiment of the Thermionic Fuel Element Verification Program designed to allow continuous monitoring of sheath insulator specimens with an applied voltage during the in-reactor test. This paper describes the IFAC-SI experiment test setting, including shear insulator samples, heat pipes, fins, and enclosing container, and discusses the thermal models and their effects on the experimental design.

  20. Development and Characterization of SiC)/ MoSi2-Si3N4(p) Hybrid Composites

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.

    1998-01-01

    Intermetallic compound MoSi2 has long been known as a high temperature material that has excellent oxidation resistance and electrical/thermal conductivity. Also its low cost, high melting point (2023 C), relatively low density (6.2 g/cu cm versus 9 g/cu cm for current engine materials), and ease of machining, make it an attractive structural material. However, the use of MoSi2 has been hindered due to its poor toughness at low temperatures, poor creep resistance at high temperatures, and accelerated oxidation (also known as 'pest' oxidation) at temperatures between approximately 450 and 550 C. Continuous fiber reinforcing is very effective means of improving both toughness and strength. Unfortunately, MoSi2 has a relatively high coefficient of thermal expansion (CTE) compared to potential reinforcing fibers such as SiC. The large CTE mismatch between the fiber and the matrix resulted in severe matrix cracking during thermal cycling. Addition of about 30 to 50 vol % of Si3N4 particulate to MoSi2 improved resistance to low temperature accelerated oxidation by forming a Si2ON2 protective scale and thereby eliminating catastrophic 'pest failure'. The Si3N4 addition also improved the high temperature creep strength by nearly five orders of magnitude, doubled the room temperature toughness and significantly lowered the CTE of the MoSi2 and eliminated matrix cracking in SCS-6 reinforced composites even after thermal cycling. The SCS-6 fiber reinforcement improved the room temperature fracture toughness by seven times and impact resistance by five times. The composite exhibited excellent strength and toughness improvement up to 1400 C. More recently, tape casting was adopted as the preferred processing of MoSi2-base composites for improved fiber spacing, ability to use small diameter fibers, and for lower cost. Good strength and toughness values were also obtained with fine diameter Hi-Nicalon tow fibers. This hybrid composite remains competitive with ceramic matrix

  1. Disilane-based cyclic deposition/etch of Si, Si:P and Si1-yCy:P layers: I. The elementary process steps

    NASA Astrophysics Data System (ADS)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Deguet, C.

    2013-02-01

    We have benchmarked the 550 °C, 20 Torr growth of Si:P and Si1-yCy:P using SiH4 and Si2H6. P segregation has prevented us from reaching P+ ion concentrations in Si higher than a few 1019 cm-3 using SiH4; the resulting surface ‘poisoning’ led to a severe growth rate reduction. Meanwhile, [P+] increased linearly with the phosphine flow when using Si2H6 as the Si precursor; values as high as 1.7 × 1020 cm-3 were obtained. The Si:P growth rate using Si2H6 was initially stable then increased as the PH3 flow increased. Mono-methylsilane flows 6.5-10 times higher were needed with Si2H6 than with SiH4 to reach the same substitutional C concentrations in intrinsic Si1-yCy layers ([C]subst. up to 1.9%). Growth rates were approximately six times higher with Si2H6 than with SiH4, however. 30 nm thick Si1-yCy layers became rough as [C]subst. exceeded 1.6% (formation of increasing numbers of islands). We have also studied the structural and electrical properties of ‘low’ and ‘high’ C content Si1-yCy:P layers (˜ 1.5 and 1.8%, respectively) grown with Si2H6. Adding significant amounts of PH3 led to a reduction of the tensile strain in the films. This was due to the incorporation of P atoms (at the expense of C atoms) in the substitutional sites of the Si matrix. Si1-yCy:P layers otherwise became rough as the PH3 flow increased. Resistivities lower than 1 mΩ cm were nevertheless associated with those Si1-yCy:P layers, with P atomic concentrations at most 3.9 × 1020 cm-3. Finally, we have quantified the beneficial impact of adding GeH4 to HCl for the low-temperature etching of Si. Etch rates 12-36 times higher with HCl + GeH4 than with pure HCl were achieved at 20 Torr. Workable etch rates close to 1 nm min-1 were obtained at 600 °C (versus 750 °C for pure HCl), enabling low-temperature cyclic deposition/etch strategies for the selective epitaxial growth of Si, Si:P and Si1-yCy:P layers on patterned wafers.

  2. Size dependent optical properties of Si quantum dots in Si-rich nitride/Si{sub 3}N{sub 4} superlattice synthesized by magnetron sputtering

    SciTech Connect

    So, Yong-Heng; Huang, Shujuan; Conibeer, Gavin; Green, Martin A.; Gentle, Angus

    2011-03-15

    A spectroscopic ellipsometry compatible approach is reported for the optical study of Si quantum dots (QDs) in Si-rich nitride/silicon nitride (SRN/Si{sub 3}N{sub 4}) superlattice, which based on Tauc-Lorentz model and Bruggeman effective medium approximation. It is shown that the optical constants and dielectric functions of Si QDs are strongly size dependent. The suppressed imaginary dielectric function of Si QDs exhibits a single broad peak analogous to amorphous Si, which centered between the transition energies E{sub 1} and E{sub 2} of bulk crystalline Si and blue shifted toward E{sub 2} as the QD size reduced. A bandgap expansion observed by the TL model when the size of Si QD reduced is in good agreement with the PL measurement. The bandgap expansion with the reduction of Si QD size is well supported by the first-principles calculations based on quantum confinement.

  3. Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc

    SciTech Connect

    Ou, Sin-Liang; Kuo, Po-Cheng; Tsai, Tsung-Lin; Chen, Sheng-Chi; Yeh, Chin-Yen; Chang, Han-Feng; Lee, Chao-Te; Chiang, Donyau

    2011-09-19

    The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu{sub 3}Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu{sub 3}Si nucleation sites as the film was annealed at 270 deg. C. After heating to 500 deg. C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4x BD-R with the bottom jitter values below 6.5%.

  4. Synthesis of several millimeters long SiC-SiO2 nanowires by a catalyst-free technique

    NASA Astrophysics Data System (ADS)

    Dong, Shun; Li, Minglun; Hu, Ping; Cheng, Yuan; Sun, Boqian

    2016-11-01

    In situ synthesis of ultra-long SiC-SiO2 nanowires were successfully conducted with the raw materials of silicon and phenolic resin by an effective and catalyst-free technique. Several millimeters long SiC-SiO2 nanowires with the diameters in the range of 50-200 nm were mainly composed of Si, C and a small amount of O, and the formation of several millimeters long SiC-SiO2 nanowires was attributed to a low flow rate and carbon sources supplied continuously by the pyrolysis of phenolic resin. A catalyst-free vapor-solid (VS) growth mechanism was proposed to illustrate the growth process of ultra-long SiC-SiO2 nanowires in present experiment, which provides a promising method for in situ fabrication of SiC-SiO2 nanowires as reinforcements into composites.

  5. Transparent conductor-Si pillars heterojunction photodetector

    SciTech Connect

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

    2014-08-14

    We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (∼ 22.5 ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600 nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

  6. Emission efficiency limit of Si nanocrystals

    PubMed Central

    Limpens, Rens; Luxembourg, Stefan L.; Weeber, Arthur W.; Gregorkiewicz, Tom

    2016-01-01

    One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use of a low-temperature hydrogen passivation treatment we demonstrate a maximum emission quantum efficiency of approximately 35%. This is the highest value ever reported for this type of material. By cross-correlating PL lifetime with EQE values, we obtain a comprehensive understanding of the efficiency limiting processes induced by Pb-defects. We establish that the observed record efficiency corresponds to an interface density of Pb-centers of 1.3 × 1012 cm12, which is 2 orders of magnitude higher than for the best Si/SiO2 interface. This result implies that Si nanocrystals with up to 100% emission efficiency are feasible. PMID:26786062

  7. SiS2 in circumstellar shells

    NASA Astrophysics Data System (ADS)

    Goebel, J. H.

    1993-10-01

    Solid state SiS2 is proposed as the material responsible for the recently discovered 21 micrometer emission feature that is observed in the carbon-rich circumstellar shells of certain protoplanetary nebulae. Sulfurized SiC, or SiS2 mantles on grains of either SiC or a:C-H are discussed as possible forms for which no spectroscopic laboratory observations yet exist. The identification with a relatively minor species and required special abundance ratios are consistent with the low incidence rate that the 21 micrometer feature presents in the population of carbon rich objects. It is also consistent with the lack of a good correlation between the 21 micrometer feature and the other solid-state spectroscopic features that have been observed in protoplanetaries that would be expected if the feature arose from molecules composed of H, C, N, and O. SiS2 condensate is consistent with the circumstellar shell temperature range, TCS approximately equal to or less than 150 K, at which the feature appears, and the available mass of SiS2, MSiS2 approx. = 5 x 10-6 solar mass, that is possible in the circumstellar shell.

  8. 26Si excited states via one-neutron removal from a 27Si radioactive ion beam

    NASA Astrophysics Data System (ADS)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2012-04-01

    A study of 26Si states by neutron removal from a fast radioactive beam of 27Si has been performed. A beam of 27Si of energy 84.3 MeV/nucleon impinged on a polypropylene foil (C3H6) of 180 mg/cm2 thickness. Deexcitation γ rays were detected with a highly segmented germanium detector array, in coincidence with the 26Si recoils, and the corresponding 26Si level energies were determined. In comparing our results to two previous γ-ray spectroscopic studies of 26Si level structures, we find good agreement with a recent measurement of the 12C(16O,2nγ)26Si reaction. Our results support the use of excitation energies from that study in helping determine the important resonance energies for the thermonuclear 25Al(p,γ)26Si reaction rate. We do not observe a bound state at 4093 keV reported in an earlier study of the 24Mg(3He,nγ)26Si reaction.

  9. Investigation of GaP/Si Heteroepitaxy on MOCVD Prepared Si(100) Surfaces

    SciTech Connect

    Warren, Emily L.; Kibbler, Alan E.; France, Ryan M.; Norman, Andrew G.; Olson, Jerry M.; McMahon, William E.

    2015-06-14

    Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-terminated Si surface. The As-As dimer rows are all parallel to the step edges, and subsequent GaP growth by MOCVD retains this dimerization orientation. Both LEED and TEM indicate that the resulting epilayer is APD-free, and could thereby serve as a template for III-V/Si multijunction solar cells.

  10. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    SciTech Connect

    Wang, Dong Yan, Yong; Schaaf, Peter; Sharp, Thomas; Schönherr, Sven; Ronning, Carsten; Ji, Ran

    2015-01-01

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  11. Behavior of Au-Si droplets in Si(001) at high temperatures

    NASA Astrophysics Data System (ADS)

    Shao, Y. M.; Nie, T. X.; Jiang, Z. M.; Zou, J.

    2012-07-01

    The transport behavior of Au-Si droplets near the Si(001) surface at elevated temperatures is investigated using transmission electron microscopy. It has been found that Au-Si droplets move differently under different temperatures, which lead to the formation of SiOx surface islands on top of droplets, and result in the lateral movements of smaller droplets away from their corresponding surface islands. Since Au droplets have been widely used as catalysts to induce semiconductor nanowires, this study provides insight behavior of Au containing droplets on semiconductor surfaces, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  12. Effect of Adventitious Carbon on the Environmental Degradation of SiC/BN/SiC Composites

    NASA Technical Reports Server (NTRS)

    Ogbuji, L. U. J. T.; Yun, H. M.; DiCarlo, J.

    2002-01-01

    Pesting remains a major obstacle to the application of SiC/SiC composites in engine service and selective degradation of the boron nitride interphase at intermediate temperatures is of primary concern. However, significant progress has been made on interphase improvement recently and we now know more about the phenomenon and ways to suppress it. By screening SiC/BN/SiC materials through characterization of strength and microstructures after exposure in a burner rig, some factors that control pesting in these composites have been determined. A key precaution is careful control of elemental carbon presence in the interphase region.

  13. High thermal conductivity SiC/SiC composites for fusion applications

    SciTech Connect

    Withers, J.C.; Kowbel, W.; Loutfy, R.O.

    1997-04-01

    SiC/SiC composites are considered for fusion applications due to their neutron irradiation stability, low activation, and good mechanical properties at high temperatures. The projected magnetic fusion power plant first wall and the divertor will operate with surface heat flux ranges of 0.5 to 1 and 4 to 6 MW/m{sup 2}, respectively. To maintain high thermal performance at operating temperatures the first wall and divertor coolant channels must have transverse thermal conductivity values of 5 to 10 and 20 to 30 W/mK, respectively. For these components exposed to a high energy neutron flux and temperatures perhaps exceeding 1000{degrees}C, SiC/SiC composites potentially can meet these demanding requirements. The lack of high-purity SiC fiber and a low through-the-thickness (transverse) thermal conductivity are two key technical problems with currently available SiC/SiC. Such composites, for example produced from Nicalon{trademark} fiber with a chemical vapor infiltrated (CVI) matrix, typically exhibit a transverse conductivity value of less than 8 W/mK (unirradiated) and less than 3 W/mK after neutron irradiation at 800{degrees}C. A new SiC/SiC composite fabrication process has been developed at MER Corp. This paper describes this process, and the thermal and mechanical properties which are observed in this new composite material.

  14. Growth of Si thin film on 6H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Wu, Hsin-Ju; Hoang, M. Tien; Li, Yuntao; First, Phillip N.

    2015-03-01

    Graphene is much studied for its unusual electronic properties. Other carbon group elements such as silicon (Si) and germanium (Ge) also are predicted to have stable 2D phases for which the electronic structure and properties could be still more interesting. Silicon carbide, already an excellent insulating substrate for epitaxial graphene, could potentially play a similar role for silicene. Commonalities in the substrate and processing may lead to the integration of carbon and silicon technologies. Here, we use surface analysis techniques (LEED, AES, STM) to investigate the formation of 2D Si on SiC(0001), under low pressures of silane or silicon. Similar methods allow control of surface graphene growth by compensating Si desorption from SiC. Among several Si-rich reconstructions, we find a single stable hexagonal phase, at a coverage close to twice the Si density predicted for silicene, and with a unit cell consistent with a commensurate layer of silicene or silicane. For a graphitized SiC starting surface, silane is shown to etch graphene, reforming SiC. Work supported in part by NSF (DMR-1106131, DMR-0820382 [MRSEC]).

  15. Specimen size effect considerations for irradiation studies of SiC/SiC

    SciTech Connect

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H.

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  16. Si=Si Double Bonds: Synthesis of an NHC-Stabilized Disilavinylidene.

    PubMed

    Ghana, Priyabrata; Arz, Marius I; Das, Ujjal; Schnakenburg, Gregor; Filippou, Alexander C

    2015-08-17

    An efficient two-step synthesis of the first NHC-stabilized disilavinylidene (Z)-(SIdipp)Si=Si(Br)Tbb (2; SIdipp=C[N(C6H3-2,6-iPr2)CH2]2, Tbb=C6H2-2,6-[CH(SiMe3)2]2-4-tBu, NHC=N-heterocyclic carbene) is reported. The first step of the procedure involved a 2:1 reaction of SiBr2(SIdipp) with the 1,2-dibromodisilene (E)-Tbb(Br)Si=Si(Br)Tbb at 100 °C, which afforded selectively an unprecedented NHC-stabilized bromo(silyl)silylene, namely SiBr(SiBr2Tbb)(SIdipp) (1). Alternatively, compound 1 could be obtained from the 2:1 reaction of SiBr2(SIdipp) with LiTbb at low temperature. 1 was then selectively reduced with C8K to give the NHC-stabilized disilavinylidene 2. Both low-valent silicon compounds were comprehensively characterized by X-ray diffraction analysis, multinuclear NMR spectroscopy, and elemental analyses. Additionally, the electronic structure of 2 was studied by various quantum-chemical methods. PMID:26136260

  17. Si, Ge, and SiGe quantum wires and quantum dots

    NASA Astrophysics Data System (ADS)

    Pearsall, T. P.

    This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses Si, Ge, and SiGe quantum wire and quantum dot structures, the synthesis of quantum wires and quantum dots, and applications of SiGe quantum-dot structures as photodetectors, light-emitting diodes, for optical amplification and as Si quantum-dot memories.

  18. The Present Status of SiC/SiC R & D for Nuclear Application in Japan

    NASA Astrophysics Data System (ADS)

    Kohyama, Akira

    2011-10-01

    SiC/SiC R & D for nuclear application in Japan is quite active under the coordinated activities of Atomic Energy Society of Japan's committee on "Applications of Ceramic Materials for Advanced Nuclear Power Systems" and mainly government funded nuclear engineering/materials activities collaborating academia and industries. Start with the brief introduction of those activities, representing research activities are introduced. ITER and BA related SiC/SiC activities are emphasized, followed by introductions of extensive OASIS, Muroran Institute of Technology activities. The importance of international collaboration and strategic planning is mentioned.

  19. X-ray absorption spectroscopy from H-passivated porous Si and oxidized Si nanocrystals

    SciTech Connect

    Schuppler, S.; Marcus, M.A.; Friedman, S.L.

    1994-11-01

    Quantum confinement in nanoscale Si structures is widely believed to be responsible for the visible luminescence observed from anodically etched porous silicon (por-Si), but little is known about the actual size or shape of these structures. Extended x-ray absorption fine structure data from a wide variety of por-Si samples show significantly reduced average Si coordination numbers due to the sizable contribution of surface-coordinated H. (The IUSI ratios, as large as 1.2, were independently confirmed by ir-absorption and {alpha}-recoil measurements.) The Si coordinations imply very large surface/volume ratios, enabling the average Si structures to be identified as crystalline particles (not wires) whose dimensions are typically <15 {Angstrom}. Comparison of the size-dependent peak luminescence energies with those of oxidized Si nanocrystals, whose shapes are known, shows remarkable agreement. Furthermore, near-edge x-ray absorption fine structure measurements of the nanocrystals shows the outer oxide and interfacial suboxide layers to be constant over a wide range of nanocrystal sizes. The combination of these results effectively rules out surface species as being responsible for the observed visible luminescence in por-Si, and strongly supports quantum confinement as the dominant mechanism occurring in Si particles which are substantially smaller than previously reported or proposed.

  20. siRNA Delivery to the Glomerular Mesangium Using Polycationic Cyclodextrin Nanoparticles Containing siRNA

    PubMed Central

    Gale, Aaron; Wu, Peiwen; Ma, Rong; Davis, Mark E.

    2015-01-01

    There is an urgent need for new therapies that can halt or reverse the course of chronic kidney disease with minimal side-effect burden on the patient. Small interfering RNA (siRNA) nanoparticles are new therapeutic entities in clinical development that could be useful for chronic kidney disease treatment because they combine the tissue-specific targeting properties of nanoparticles with the gene-specific silencing effects of siRNA. Recent reports have emerged demonstrating that the kidney, specifically the glomerulus, is a readily accessible site for nanoparticle targeting. Here, we explore the hypothesis that intravenously administered polycationic cyclodextrin nanoparticles containing siRNA (siRNA/CDP-NPs) can be used for delivery of siRNA to the glomerular mesangium. We demonstrate that siRNA/CDP-NPs localize to the glomerular mesangium with limited deposition in other areas of the kidney after intravenous injection. Additionally, we report that both mouse and human mesangial cells rapidly internalize siRNA/CDP-NPs in vitro and that nanoparticle uptake can be enhanced by attaching the targeting ligands mannose or transferrin to the nanoparticle surface. Lastly, we show knockdown of mesangial enhanced green fluorescent protein expression in a reporter mouse strain following iv treatment with siRNA/CDP-NPs. Altogether, these data demonstrate the feasibility of mesangial targeting using intravenously administered siRNA/CDP-NPs. PMID:25734248

  1. Performance Comparison Study of SiC and Si Technology for an IPM Drive System

    SciTech Connect

    Chinthavali, Madhu Sudhan; Otaduy, Pedro J; Ozpineci, Burak

    2010-01-01

    The impact of the new SiC material based devices on a full system needs to be evaluated in order to assess the benefits of replacing Silicon (Si) devices with WBG devices. In this paper the results obtained with a full-system model simulated for an aggressive US06 drive cycle are presented. The system model includes a motor/generator model and inverter loss model developed using actual measured data. The results provide an insight to the difference in performance of a permanent magnet traction drive system using SiC versus Si devices.

  2. Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

    SciTech Connect

    Gatti, R.; Boioli, F.; Montalenti, F.; Miglio, Leo; Grydlik, M.; Brehm, M.; Groiss, H.; Glaser, M.; Fromherz, T.; Schaeffler, F.

    2011-03-21

    We demonstrate dislocation engineering without oxide masks. By using finite element simulations we show how nanopatterning of Si substrates with (111) trenches provides anisotropic elastic relaxation in a SiGe film, generates preferential nucleation sites for dislocation loops, and allows for dislocation trapping, leaving wide areas free of threading dislocations. These predictions are confirmed by atomic force and transmission electron microscopy performed on overcritical Si{sub 0.7}Ge{sub 0.3} films. These were grown by molecular beam epitaxy on a Si(001) substrate patterned with periodic arrays of selectively etched (111)-terminated trenches.

  3. Si (211) substrate thinning technology for HgCdTe focal plane arrays on Si substrates

    NASA Astrophysics Data System (ADS)

    Zhang, Shan; Wang, Chenfei; Cao, Juying; Hu, Xiaoning

    2010-10-01

    A wet chemical etching method for (211)Si substrates was demonstrated in this paper. The morphologies and cleanness of (211) Si surface etched in different mixture ratio HF-HNO3-HAC solutions have been studied by using optical microscope and the surface profile measuring system (SPMS). The analysis of the surface images indicated that the Si etched by the HF-HNO3-HAC (2:15:5) has the smoother surface, and the wet chemical etching can effectively eliminate the damage introduced by the chemo-mechanical polishing. An auto wet chemical etching agitator which can move in the vertical orientation was used. The wet chemical etching rate of (211) Si was obtained in the room temperature and the transmitted spectra of (211) Si with different thickness were measured by Fourier Transform Infrared Spectroscopy (FTIR) and compared. It is confirmed that the Si with different thickness make no difference to the spectral response in mid-wave. By using this novel technology, the Si substrate of HgCdTe/Si detector was removed completely with the HF-HNO3- HAC (2:15:5) solution. It is obvious that the wet chemical etching method can remove the (211) Si substrates with no damage and detector can work better.

  4. Straining of SiGe ultrathin films with mesoporous Si substrates

    SciTech Connect

    Boucherif, A.; Guillot, G.; Lysenko, V.; Blanchard, N. P.; Regreny, P.; Grenet, G.; Marty, O.

    2010-09-27

    We report on the fabrication and characterization of ultrathin (down to 50 nm) tensile strained SiGe films on mesoporous Si substrates. Low temperature oxidation of the porous substrate relaxes the compressive strain in the as grown monocrystalline (mc) SiGe. Applying this method to a 50 nm thick mc-Si{sub 0.72}Ge{sub 0.28} film, a tensile strain >0.78% can be achieved without compromising crystalline quality and up to 1.45 % without the appearance of cracks.

  5. Fe-Si networks in Na2FeSiO4 cathode materials.

    PubMed

    Wu, P; Wu, S Q; Lv, X; Zhao, X; Ye, Z; Lin, Z; Wang, C Z; Ho, K M

    2016-08-24

    Using a combination of adaptive genetic algorithm search, motif-network search scheme and first-principles calculations, we have systematically studied the low-energy crystal structures of Na2FeSiO4. We show that the low-energy crystal structures with different space group symmetries can be classified into several families based on the topologies of their Fe-Si networks. In addition to the diamond-like network which is shared by most of the low-energy structures, another three robust Fe-Si networks are also found to be stable during the charge/discharge process. The electrochemical properties of representative structures from these four different Fe-Si networks in Na2FeSiO4 and Li2FeSiO4 are investigated and found to be strongly correlated with the Fe-Si network topologies. Our studies provide a new route to characterize the crystal structures of Na2FeSiO4 and Li2FeSiO4 and offer useful guidance for the design of promising cathodes for Na/Li ion batteries. PMID:27523264

  6. Response of SiC/SiC to Transient Thermal Conditions: A Review

    SciTech Connect

    Jones, Russell H.

    2001-06-30

    The database on thermal shock behavior of SiC/SiC composites is very limited. The existing data suggests continuous fiber ceramic matrix composites, such as SiC/SiC, exhibit very good thermal shock characteristics but most data was obtained for -Delta T conditions as a result of quenching from an elevated temperature. Thermal shock in a fusion energy system will result from plasma discharge and will result in a +Delta T. One study was reported for SiC/SiC composites given a +Delta T with no loss in strength following 25 cycles at a heating rate of 1700 degrees C/s. Monolithic SiC failed in 1.5 cycles at a heating rate of 1400 degrees C/s. Thermal fatigue test results also suggest that SiC/SiC composites will exhibit little or no degradation for 100's of cycles. It was estimated that radiation could, in an extreme case, cause a reduction in the thermal shock performance from a calculated Delta Tc of 957K to about 300K if the fiber strength is reduced by 50%. Newer composites with greater radiation resistance should have a much smaller change in the Delta Tc.

  7. In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

    2016-08-01

    In vacuo high-sensitivity low energy ion scattering (HS-LEIS) has been used to investigate the initial growth stages of DC sputtered Ru on top of Si, SiN, and SiO2. The high surface sensitivity of this technique allowed an accurate determination of surface coverages and thicknesses required for closing the Ru layer on all three substrates. The Ru layer closes (100% Ru surface signal) at about 2.0, 3.2, and 4.7 nm on top of SiO2, SiN, and Si, respectively. In-depth Ru concentration profiles can be reconstructed from the Ru surface coverages when considering an error function like model. The large intermixing (4.7 nm) for the Ru-on-Si system is compared to the reverse system (Si-on-Ru), where only 0.9 nm intermixing occurs. The difference is predominantly explained by the strong Si surface segregation that is observed for Ru-on-Si. This surface segregation effect is also observed for Ru-on-SiN but is absent for Ru-on-SiO2. For this last system, in vacuo HS-LEIS analysis revealed surface oxygen directly after deposition, which suggests an oxygen surface segregation effect for Ru-on-SiO2. In vacuo XPS measurements confirmed this hypothesis based on the reaction of Ru with oxygen from the SiO2, followed by oxygen surface segregation.

  8. Theory of Si and C Pb Centers on the (111) Interfaces of the β-SiC-SiO2 System.

    NASA Astrophysics Data System (ADS)

    Fowler, W. Beall; Edwards, Arthur H.

    1997-03-01

    We report theoretical calculations on the Si and C Pb centers on the (111) interfaces of the β-SiC-SiO2 system. Our atomic cluster sizes are such that our results apply equally to (0001) 6H and 4H SiC-SiO2 interfaces. Using semiempirical quantum mechanical (MOPAC 6.0)(J. J. P. Stewart, MOPAC 6.0, QCPE 455) (1990). and ab-initio (GAMESS)(M. W. Schmidt et) al., J. Comput. C hem. 14, 1347 (1993). codes, we have calculated equilibrium geometries and have predicted ^29Si and ^14C hyperfine parameters and electrical level positions. We have also used a modified(W. B. Fowler and R. J. El liott, Phys. Rev. B34), 5525 (1986). Haldane-Anderson approach to estimate level positions and defect charge s. Compared with the Pb center on the (111) Si-SiO2 interface, we predict greater atomic relaxations for the Si Pb and smaller atomic relaxations for the C P_b. Furthermore, we predict a large increase in hyperfine constants for the Si Pb as compared with that on the Si-SiO2 interface. For the Si P_b, both -/0 and 0/+ levels are predicted to lie in the upper half of the SiC gap; for the C Pb the -/0 level is predicted to lie in the upper half and the 0/+ level in the lower half of the gap.

  9. Expanding the Repertoire of Molecular Linkages to Silicon: Si-S, Si-Se, and Si-Te Bonds.

    PubMed

    Hu, Minjia; Liu, Fenglin; Buriak, Jillian M

    2016-05-01

    Silicon is the foundation of the electronics industry and is now the basis for a myriad of new hybrid electronics applications, including sensing, silicon nanoparticle-based imaging and light emission, photonics, and applications in solar fuels, among others. From interfacing of biological materials to molecular electronics, the nature of the chemical bond plays important roles in electrical transport and can have profound effects on the electronics of the underlying silicon itself, affecting its work function, among other things. This work describes the chemistry to produce ≡Si-E bonds (E = S, Se, and Te) through very fast microwave heating (10-15 s) and direct thermal heating (hot plate, 2 min) through the reaction of hydrogen-terminated silicon surfaces with dialkyl or diaryl dichalcogenides. The chemistry produces surface-bound ≡Si-SR, ≡Si-SeR, and ≡Si-TeR groups. Although the interfacing of molecules through ≡Si-SR and ≡Si-SeR bonds is known, to the best of our knowledge, the heavier chalcogenide variant, ≡Si-TeR, has not been described previously. The identity of the surface groups was determined by Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and depth profiling with time-of-flight-secondary ionization mass spectrometry (ToF-SIMS). Possible mechanisms are outlined, and the most likely, based upon parallels with well-established molecular literature, involve surface silyl radicals or dangling bonds that react with either the alkyl or aryl dichalcogenide directly, REER, or its homolysis product, the alkyl or aryl chalcogenyl radical, RE· (where E = S, Se, and Te). PMID:27055056

  10. Expanding the Repertoire of Molecular Linkages to Silicon: Si-S, Si-Se, and Si-Te Bonds.

    PubMed

    Hu, Minjia; Liu, Fenglin; Buriak, Jillian M

    2016-05-01

    Silicon is the foundation of the electronics industry and is now the basis for a myriad of new hybrid electronics applications, including sensing, silicon nanoparticle-based imaging and light emission, photonics, and applications in solar fuels, among others. From interfacing of biological materials to molecular electronics, the nature of the chemical bond plays important roles in electrical transport and can have profound effects on the electronics of the underlying silicon itself, affecting its work function, among other things. This work describes the chemistry to produce ≡Si-E bonds (E = S, Se, and Te) through very fast microwave heating (10-15 s) and direct thermal heating (hot plate, 2 min) through the reaction of hydrogen-terminated silicon surfaces with dialkyl or diaryl dichalcogenides. The chemistry produces surface-bound ≡Si-SR, ≡Si-SeR, and ≡Si-TeR groups. Although the interfacing of molecules through ≡Si-SR and ≡Si-SeR bonds is known, to the best of our knowledge, the heavier chalcogenide variant, ≡Si-TeR, has not been described previously. The identity of the surface groups was determined by Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and depth profiling with time-of-flight-secondary ionization mass spectrometry (ToF-SIMS). Possible mechanisms are outlined, and the most likely, based upon parallels with well-established molecular literature, involve surface silyl radicals or dangling bonds that react with either the alkyl or aryl dichalcogenide directly, REER, or its homolysis product, the alkyl or aryl chalcogenyl radical, RE· (where E = S, Se, and Te).

  11. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    NASA Astrophysics Data System (ADS)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  12. Electrospun a-Si using Liquid Silane/Polymer Inks

    SciTech Connect

    Doug Schulz

    2010-12-09

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  13. Electrospun a-Si using Liquid Silane/Polymer Inks

    SciTech Connect

    D.L. Schulz; J.M. Hoey; J. Smith; J. Lovaasen; C. Braun; X. Dai; K. Anderson; A. Elangovan; X. Wu; S. Payne; K. Pokhodnya; I. Akhatov; L. Pederson; P. Boudjouk

    2010-12-01

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  14. Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1989-01-01

    The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by an Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.

  15. Enhanced performance of Si opto-devices by SiGe nanostructures

    NASA Astrophysics Data System (ADS)

    Presting, Hartmut; Konle, Johannes; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf

    2001-05-01

    Ultrathin silicon/germanium (SiGe) quantum well (QW) and short-period SimGen superlattice structures have been grown by molecular beam epitaxy (MBE) on <100$GTR Si substrates. Si/SiGe detectors in the near infrared (IR; 1.3(mu) ) for optical communication and mid-infrared (3(mu) -5(mu) ; 8(mu) -12(mu) ) regime for heat sensing applications have been fabricated and characterized. The SiGe detectors for the mid IR are based on hetero-internal photoemission (HIP) from a highly p-doped SiGe quantum well into an undoped Si layer. These SiGe HIP-heterostructures allow the possibility to tailor the photoresponse and cut-off wavelength for IR-detectors by changing the Ge-content and QW width of the active layers. External quantum efficiencies up to 0.6% at 77K have been achieved from HIP-detectors and detectivities in excess of 8x1011cmHz0.5/W at 77 Kelvin have been obtained for Si/SiGe multiple quantum well (MQW) detectors. We have also studied nano-scaled, three dimensional Ge islands grown by self-organized Stranski-Krastanov growth. The Ge-islands are deposited in the base of a Si solar cell to increase the quantum efficiency and are investigated by atomic force microscopy (AFM), photoluminescence and photocurrent measurements. They have been grown with varying conditions and exhibit three dimensional growth in a small temperature regime between 500 degree(s)C and 700 degree(s)C for Ge-thicknesses above 4ML.

  16. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency

    NASA Astrophysics Data System (ADS)

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-01

    A p-n junction was made on p-type Si<100> wafer (15 × 15 × 0.2 mm3 in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n+ Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm-2, the fill factor was 0.779 and the conversion efficiency was 18.97%.

  17. Electrolytical production of Ni + Mo + Si composite coatings with enhanced content of Si

    NASA Astrophysics Data System (ADS)

    Kubisztal, J.; Budniok, A.

    2006-10-01

    Ni + Mo + Si composite coatings were prepared by co-deposition of nickel with molybdenum and silicon powders from a nickel solution in which Mo and Si particles were suspended by stirring. The layers have been deposited on a carbon steel substrate (St3S) under galvanostatic conditions. The content of Si in deposited layers was about 2-5 wt.% depending on deposition current density and the value of electric charge. For comparison Ni + Mo composite coatings were obtained under analogous current conditions. Composite coatings of enhanced Si content (15 wt.%) were deposited from an electrolyte in which 40 g/dm 3 of Si covered with electroless plated nickel was dispersed. Deposition current density was equal 0.1 A/cm 2 and the value of electric charge Q = 500 C/cm 2. The thickness of the coatings was about 100-300 μm depending on their kind, electric charge and the deposition current density. Surface and cross-section morphology were investigated by scanning electron microscope (SEM). All deposited coatings are characterized by great, developed surface area. No internal stresses causing their cracking were observed. Chemical composition of the layers was determined by X-ray fluorescence spectroscopy (XRF) method and quantitative X-ray analysis (QXRD). It was stated, that the content of molybdenum and silicon in Ni + Mo + Si coatings depends on deposition current density and the amount of the powder in bath. The results of structural investigation of the obtained layers by the X-ray diffraction (XRD) method show, that they consist in crystalline Mo or Mo and Si phases built into Ni matrix. Moreover, Ni + Mo + Si composite coatings were modified by thermal treatment. It has been found that the thermal treatment of Ni + Mo + Si composite coatings caused that the new phases (NiSi, Mo 2Ni 3Si and Ni 6Mo 6C 1.06) were obtained.

  18. Eu-doped Si-SiO2 core–shell nanowires for Si-compatible red emission

    NASA Astrophysics Data System (ADS)

    Xu, Jinyou; Guo, Pengfei; Zou, Zhijun; Lu, Yang; Yan, Hailong; Luo, Yongsong

    2016-09-01

    The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics—which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core–shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu3+ ions was observed under laser illumination. The effect of Eu3+ concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics.

  19. Eu-doped Si-SiO2 core-shell nanowires for Si-compatible red emission.

    PubMed

    Xu, Jinyou; Guo, Pengfei; Zou, Zhijun; Lu, Yang; Yan, Hailong; Luo, Yongsong

    2016-09-30

    The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics-which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core-shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu(3+) ions was observed under laser illumination. The effect of Eu(3+) concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics.

  20. Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells

    NASA Astrophysics Data System (ADS)

    Nawaz, Muhammad; Ahmad, Ashfaq

    2012-04-01

    This work deals with the design evaluation and influence of absorber doping for a-Si:H/a-SiC:H/a-SiGe:H based thin-film solar cells using a two-dimensional computer aided design (TCAD) tool. Various physical parameters of the layered structure, such as doping and thickness of the absorber layer, have been studied. For reliable device simulation with realistic predictability, the device performance is evaluated by implementing necessary models (e.g., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction, Schokley—Read Hall recombination model, Auger recombination model, bandgap narrowing effects, doping and temperature dependent mobility model and using Fermi—Dirac statistics). A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption. Similarly, a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top a-Si and bottom a-SiGe component cells. A moderate n-doping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the VOC (and fill factor) of the device.

  1. Eu-doped Si-SiO2 core-shell nanowires for Si-compatible red emission.

    PubMed

    Xu, Jinyou; Guo, Pengfei; Zou, Zhijun; Lu, Yang; Yan, Hailong; Luo, Yongsong

    2016-09-30

    The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics-which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core-shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu(3+) ions was observed under laser illumination. The effect of Eu(3+) concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics. PMID:27560836

  2. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO 2/Si structures

    NASA Astrophysics Data System (ADS)

    Depas, M.; Vermeire, B.; Mertens, P. W.; Van Meirhaeghe, R. L.; Heyns, M. M.

    1995-08-01

    In this work the electron tunnelling in device grade ultra-thin 3-6 nm n +poly-Si/SiO 2/n-Si structures has been analysed. The well known analytic expression for the Fowler-Nordheim tunnelling current was adapted to include the case of direct tunnelling of electrons, which becomes important for oxide layers thinner than 4.5 nm. For these ultra-thin oxide MOS structures it is necessary to take the band bending in the Si substrate and in the poly-Si layer into account to determine the oxide electrical field strength and to derive the tunnelling parameters of the measured current-voltage characteristic. A method is explained to derive the tunnel barrier height φs and the effective mass of the tunnelling electron mox from the experimental tunnel current characteristics. It is shown that both the direct tunnelling and the Fowler-Nordheim tunnelling current can be quantitatively explained by a WKB approximation using mox as the single fitting parameter.

  3. Eu-doped Si-SiO2 core-shell nanowires for Si-compatible red emission

    NASA Astrophysics Data System (ADS)

    Xu, Jinyou; Guo, Pengfei; Zou, Zhijun; Lu, Yang; Yan, Hailong; Luo, Yongsong

    2016-09-01

    The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics—which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core-shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu3+ ions was observed under laser illumination. The effect of Eu3+ concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics.

  4. Wetting behavior of Al Si Mg alloys on Si3N4/Si substrates: optimization of processing parameters

    NASA Astrophysics Data System (ADS)

    de La Peña, J. L.; Pech-Canul, M. I.

    2008-06-01

    The wetting behavior of Al Si Mg alloys on Si3N4/Si substrates has been investigated using the sessile drop technique. Based on a Taguchi experiment design, the effect of the following processing parameters on the contact angle (θ) and surface tension (σLV) was studied: processing time and temperature, atmosphere (Ar and N2), substrate surface condition (with and without a silicon wafer), as well as the Mg and Si contents in the aluminium alloy. In nitrogen, non-wetting conditions prevail during the isothermal events while in argon a remarkable non-wetting to wetting transition leads to contact angles θ as low as 11±3° and a liquid surface tension σLV of 33± 10×10-5 kJ/m2. According to the multiple analysis of variance (Manova), the optimum conditions for minimizing the values of θ and σLV are as follows: temperature of 1100 °C, processing time of 90 min, argon atmosphere, no use of a silicon wafer, and the use of the Al-18% Mg-1% Si alloy. A verification test conducted under the optimized conditions resulted in a contact angle of θ=9±3° and a surface tension of σLV=29± 9×10-5 kJ/m2, both indicative of excellent wetting.

  5. Evidences of the existence of SiTe2 crystalline phase and a proposed new Si-Te phase diagram

    NASA Astrophysics Data System (ADS)

    Mishra, R.; Mishra, P. K.; Phapale, S.; Babu, P. D.; Sastry, P. U.; Ravikumar, G.; Yadav, A. K.

    2016-05-01

    The existence of two distinct crystalline phases viz., Si2Te3 and SiTe2, in the Si-Te system is established from differential thermal analysis (DTA) studies. Thermo-gravimetric (TG) data on SiTe2 indicate that the compound decomposes to Si in multiple steps via intermediate Si2Te3 phase. X-ray diffraction (XRD) reveals that SiTe2 crystallizes in P 3 ̅m1 space group with CdI2 trigonal structure, whereas Si2Te3 crystallizes in trigonal structure with space group P 3 ̅1c with varying occupation of octahedral voids. Single Si atoms fill only 1/2 of the octahedral voids in SiTe2 structure whereas in Si2Te3, Si atoms are arranged in pairs occupying 2/3 of the octahedral voids in alternating planes along c-axis. Further, X-ray absorption near edge structure (XANES) and X-ray photoelectron spectroscopy (XPS) confirm the distinctness of the chemical environment in the two crystalline structures confirming the uniqueness of both the phases. DTA results on the two compounds indicate the presence of one crystallographic phase-transition in each of the compound with transition temperatures at 441 °C for Si2Te3 and 392 °C for SiTe2. At the same time both Si2Te3 and SiTe2 undergo peritectic decomposition at 683 °C and 432 °C forming [Si(s)+Te(liq)] and [α-Si2Te3(s)+Te(liq)], respectively. The system revealed eutectic reaction between β-SiTe2 and Te at 398 °C [L=Te+SiTe2]. Consequently, the phase diagram in the Si-Te system has been delineated.

  6. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    NASA Astrophysics Data System (ADS)

    Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen

    2016-02-01

    We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5-90 nm), the SiO2 thickness (3-4 nm), and as well the SiGe-shell thickness (2-15 nm) has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS) devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5) in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge) MOS nanoelectronic and nanophotonic applications.

  7. Stability relations in the system CaSiO3-CaMnSi2O6-CaFeSi2O6

    NASA Astrophysics Data System (ADS)

    Abrecht, Jürgen

    1980-10-01

    In the system CaSiO3-CaMnSi2O6-CaFeSi2O6 extensive miscibility gaps between pyroxenoids and clinopyroxenes are observed. The miscibility gap between Mn-bustamite and Mn-wollastonite has been determined experimentally by a hydrothermal technique between 400° and 1200° C at P f= 2 kbar. Further experiments have been performed at P f=9 kbar, which revealed a shifting of the miscibility gap towards more Ca-rich compositions. The bustamite phase is stabilized by high pressures and the wollastonite structure is the stable phase at high temperatures. Similar phase relations as along the join CaSiO3-CaMnSi2O6 exist along the join CaSiO3-CaFeSi2O6 but with a more extensive two-phase field of bustamite-clinopyroxene. Possible phase relations along the joins CaSiO3-CaMnSi2O6, CaSiO3-CaFeSi2O6 and CaFeSi2O6-CaMnSi2O6 are given in temperature-composition diagrams for low pressures, based on natural and experimental data.

  8. Morphology of α-Si3N4 in Fe-Si3N4 prepared via flash combustion

    NASA Astrophysics Data System (ADS)

    Li, Bin; Chen, Jun-hong; Su, Jin-dong; Yan, Ming-wei; Sun, Jia-lin; Li, Yong

    2015-12-01

    The state and formation mechanism of α-Si3N4 in Fe-Si3N4 prepared by flash combustion were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results indicate that α-Si3N4 crystals exist only in the Fe-Si3N4 dense areas. When FeSi75 particles react with N2, which generates substantial heat, a large number of Si solid particles evaporate. The product between Si gas and N2 is a mixture of α-Si3N4 and β-Si3N4. At the later stage of the flash combustion process, α-Si3N4 crystals dissolve and reprecipitate as β-Si3N4 and the β-Si3N4 crystals grow outward from the dense areas in the product pool. As the temperature decreases, the α-Si3N4 crystals cool before transforming into β-Si3N4 crystals in the dense areas of Fe-Si3N4. The phase composition of flash-combustion-synthesized Fe-Si3N4 is controllable through manipulation of the gas-phase reaction in the early stage and the α→β transformation in the later stage.

  9. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    NASA Astrophysics Data System (ADS)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 – 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 – 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  10. Synthesis of micro-sized interconnected Si-C composites

    DOEpatents

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  11. Morphological, compositional, structural, and optical properties of Si-nc embedded in SiOx films

    PubMed Central

    2012-01-01

    Structural, compositional, morphological, and optical properties of silicon nanocrystal (Si-nc) embedded in a matrix of non-stoichiometric silicon oxide (SiOx) films were studied. SiOx films were prepared by hot filament chemical vapor deposition technique in the 900 to 1,400°C range. Different microscopic and spectroscopic characterization techniques were used. The film composition changes with the growth temperature as Fourier transform infrared spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy reveal. High-resolution transmission electron microscopy supports the existence of Si-ncs with a diameter from 1 to 6.5 nm in the matrix of SiOx films. The films emit in a wide photoluminescent spectrum, and the maximum peak emission shows a blueshift as the growth temperature decreases. On the other hand, transmittance spectra showed a wavelength shift of the absorption border, indicating an increase in the energy optical bandgap, when the growth temperature decreases. A relationship between composition, Si-nc size, energy bandgap, PL, and surface morphology was obtained. According to these results, we have analyzed the dependence of PL on the composition, structure, and morphology of the Si-ncs embedded in a matrix of non-stoichiometric SiOx films. PMID:23110990

  12. SiC/Si diode trigger circuit provides automatic range switching for log amplifier

    NASA Technical Reports Server (NTRS)

    1967-01-01

    SiC/Si diode pair provides automatic range change to extend the operating range of a logarithmic amplifier-conversion circuit and assures stability at or near the range switch-over point. the diode provides hysteresis for a trigger circuit that actuates a relay at the desired range extension point.

  13. Atomic state and characterization of nitrogen at the SiC/SiO{sub 2} interface

    SciTech Connect

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-21

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO{sub 2} interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO{sub 2}). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs.

  14. Characterization by XDR of amorphous SiCx/c-Si structures at high temperatures

    NASA Astrophysics Data System (ADS)

    Torres, I.

    2011-09-01

    By annealing thin hydrogenated amorphous silicon carbide (a-SiCx:H) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on crystalline silicon (c-Si) wafers, pn-junctions with very low inverse saturation current can be formed. This has been shown in heterojunction bipolar transistors and solar cells with +/- 400°C for this process. The characterization of these structures indicates that a-SiCx:H films partially re-crystallize during the annealing process forming Si-nanocrystals embedded in the amorphous film. Understanding this process and further improving the pn-junction the study of the re-crystallization process by X-Ray Diffraction (XRD) measurements has been done. This paper deals with the characterization of amorphous SiCx/c-Si structures with 100 and 300 nm thickness measured by XRD with the temperature chamber with an annealing process at 900°C. Both intrinsic and phosphorus-doped a-SiCx:H films were deposited on a c-Si substrate p-type of 300um-thickness with crystallographic orientation <100> using the PECVD reactor. From the in-situ measurements using the XDR, the crystallization phase was obtained; this was done by taking the maximum value of intensity at the dominant peak in the orientation <111> and normalization. Fitting this with the Avrami-Mehl-Johnson Theory the incubation as well as the crystallization time were obtained to study the thermally activated process.

  15. Small-Angle Neutron Scattering Studies of a-Si:H and a-Si:D

    SciTech Connect

    Williamson, D. L.; Marr, D. W. M.; Nelson, B. P.; Iwaniczko, E.; Yang, J.; Yan, B.; Guha, S.

    2000-01-01

    The heterogeneity of hydrogen and deuterium on the nanometer scale has been probed by samll-angle neutron scattering (SANS) from a-Si:H and a-Si:D films. Films were depsoited by two techniques, plasma-enhanced chemical vapor deposition (PECVD) and hot-wire chemical vapor deposition (HWCVD) using conditions that yield high quality films and devices.

  16. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Munuera, Carmen; Varela del Arco, Maria; Soria, Federico; Ocal, Carmen; Ruiz, Ana; Alonso, Maria

    2006-01-01

    Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 x 1 surfaces with low (<1 degree) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 x 7 vicinal substrates misoriented 4 degrees toward the View the MathML source direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.

  17. Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.

    PubMed

    Ma, J W; Lee, W J; Bae, J M; Jeong, K S; Oh, S H; Kim, J H; Kim, S-H; Seo, J-H; Ahn, J-P; Kim, H; Cho, M-H

    2015-11-11

    Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

  18. Green bean biofortification for Si through soilless cultivation: plant response and Si bioaccessibility in pods.

    PubMed

    Montesano, Francesco Fabiano; D'Imperio, Massimiliano; Parente, Angelo; Cardinali, Angela; Renna, Massimiliano; Serio, Francesco

    2016-08-17

    Food plants biofortification for micronutrients is a tool for the nutritional value improvement of food. Soilless cultivation systems, with the optimal control of plant nutrition, represent a potential effective technique to increase the beneficial element content in plant tissues. Silicon (Si), which proper intake is recently recommended for its beneficial effects on bone health, presents good absorption in intestinal tract from green bean, a high-value vegetable crop. In this study we aimed to obtain Si biofortified green bean pods by using a Si-enriched nutrient solution in soilless system conditions, and to assess the influence of boiling and steaming cooking methods on Si content, color parameters and Si bioaccessibility (by using an in vitro digestion process) of pods. The Si concentration of pods was almost tripled as a result of the biofortification process, while the overall crop performance was not negatively influenced. The Si content of biofortified pods was higher than unbiofortified also after cooking, despite the cooking method used. Silicon bioaccessibility in cooked pods was more than tripled as a result of biofortification, while the process did not affect the visual quality of the product. Our results demonstrated that soilless cultivation can be successfully used for green bean Si biofortification.

  19. UV-Raman deformation coefficients in Si and SiGe alloys

    NASA Astrophysics Data System (ADS)

    Canonico, Michael; Liu, Ran

    2005-03-01

    As Si CMOS device scaling issues become increasingly challenging a number of alternatives arise including Si-On-Insulator (SOI) substrates, high-k gate dielectrics, and Strained Si Channel (SSC) devices. In the case of SSC structures, the enhancement in electron mobility depends directly on the stress magnitude. Raman scattering, particularly in the UV due to short penetration depth, has proven well suited for measuring thin SSC layer stress. The technique depends critically on the value taken for the strain shift coefficient (b), which correlates the shift in the phonon frequency with the strain. A number of values have been reported in the literature to date using NIR and visible excitation; however, the authors are unaware of previous work performed specifically in the UV. In this work, we have used a combination of HRXRD reciprocal space mapping (RSM) to measure the in-plane strain of high quality Si/SiGe heterostructures and UV-Raman with the 325nm He-Cd line to determine the Si LO phonon deformation coefficient in Si and SiGe alloys with compositions ranging from 10-40% Ge.

  20. Green bean biofortification for Si through soilless cultivation: plant response and Si bioaccessibility in pods.

    PubMed

    Montesano, Francesco Fabiano; D'Imperio, Massimiliano; Parente, Angelo; Cardinali, Angela; Renna, Massimiliano; Serio, Francesco

    2016-01-01

    Food plants biofortification for micronutrients is a tool for the nutritional value improvement of food. Soilless cultivation systems, with the optimal control of plant nutrition, represent a potential effective technique to increase the beneficial element content in plant tissues. Silicon (Si), which proper intake is recently recommended for its beneficial effects on bone health, presents good absorption in intestinal tract from green bean, a high-value vegetable crop. In this study we aimed to obtain Si biofortified green bean pods by using a Si-enriched nutrient solution in soilless system conditions, and to assess the influence of boiling and steaming cooking methods on Si content, color parameters and Si bioaccessibility (by using an in vitro digestion process) of pods. The Si concentration of pods was almost tripled as a result of the biofortification process, while the overall crop performance was not negatively influenced. The Si content of biofortified pods was higher than unbiofortified also after cooking, despite the cooking method used. Silicon bioaccessibility in cooked pods was more than tripled as a result of biofortification, while the process did not affect the visual quality of the product. Our results demonstrated that soilless cultivation can be successfully used for green bean Si biofortification. PMID:27530434

  1. Ballistic-Charge-Carrier Spectroscopy Of CoSi(2)/Si Interfaces

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Kaiser, William J.; Fathauer, Robert W.; Bell, Lloyd D.; Lee, Edwin Y.

    1993-01-01

    Report discusses experiments in which ballistic-electron-emission microscopy (BEEM) and related ballistic-hole and charge-carrier-scattering spectroscopies used to investigate transport of electric-charge carriers (electrons and holes) in epitaxial CoSi2/Si system.

  2. Comparison of Nanocarbon-Silicon Solar Cells with Nanotube-Si or Graphene-Si Contact.

    PubMed

    Xu, Wenjing; Deng, Bing; Shi, Enzheng; Wu, Shiting; Zou, Mingchu; Yang, Liusi; Wei, Jinquan; Peng, Hailin; Cao, Anyuan

    2015-08-12

    Nanocarbon structures such as carbon nanotubes (CNTs) and graphene (G) have been combined with crystalline silicon wafers to fabricate nanocarbon-Si solar cells. Here, we show that the contact between the nanocarbon and Si plays an important role in the solar cell performance. An asymmetrically configured CNT-G composite film was used to create either CNT-Si dominating or G-Si dominating junctions, resulting in obviously different solar cell behavior in pristine state. Typically, solar cells with direct G-Si contacts (versus CNT-Si) exhibit better characteristics due to improved junction quality and larger contact area. On the basis of the composite film, the obtained CNT-G-Si solar cells reach power conversion efficiencies of 14.88% under air mass 1.5, 88 mW/cm2 illumination through established techniques such as acid doping and colloidal antireflection. Engineering the nanocarbon-Si contact is therefore a possible route for further improving the performance of this type of solar cells. PMID:26212335

  3. Semipolar (202̅3) nitrides grown on 3C-SiC/(001) Si substrates

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Presa, S.; Akhter, M.; Maaskant, P. P.; Corbett, B.; Parbrook, P. J.

    2015-12-01

    Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al0.5Ga0.5N/AlN interlayers were employed to produce a single (202̅3) GaN surface orientation. Specular crack-free GaN layers showed undulations along [11̅0]{}3{{C}-{SiC}/{Si}} with a root mean square roughness of about 13.5 nm (50 × 50 μm2). The orientation relationship determined by x-ray diffraction (XRD) was found to be [1̅21̅0]GaN ∥[11̅0]{}3{{C}-{SiC}/{Si}} and [3̅034]GaN ∥[110]3C - SiC/Si . Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (202̅3) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm-2).

  4. Green bean biofortification for Si through soilless cultivation: plant response and Si bioaccessibility in pods

    PubMed Central

    Montesano, Francesco Fabiano; D’Imperio, Massimiliano; Parente, Angelo; Cardinali, Angela; Renna, Massimiliano; Serio, Francesco

    2016-01-01

    Food plants biofortification for micronutrients is a tool for the nutritional value improvement of food. Soilless cultivation systems, with the optimal control of plant nutrition, represent a potential effective technique to increase the beneficial element content in plant tissues. Silicon (Si), which proper intake is recently recommended for its beneficial effects on bone health, presents good absorption in intestinal tract from green bean, a high-value vegetable crop. In this study we aimed to obtain Si biofortified green bean pods by using a Si-enriched nutrient solution in soilless system conditions, and to assess the influence of boiling and steaming cooking methods on Si content, color parameters and Si bioaccessibility (by using an in vitro digestion process) of pods. The Si concentration of pods was almost tripled as a result of the biofortification process, while the overall crop performance was not negatively influenced. The Si content of biofortified pods was higher than unbiofortified also after cooking, despite the cooking method used. Silicon bioaccessibility in cooked pods was more than tripled as a result of biofortification, while the process did not affect the visual quality of the product. Our results demonstrated that soilless cultivation can be successfully used for green bean Si biofortification. PMID:27530434

  5. Comparison of Nanocarbon-Silicon Solar Cells with Nanotube-Si or Graphene-Si Contact.

    PubMed

    Xu, Wenjing; Deng, Bing; Shi, Enzheng; Wu, Shiting; Zou, Mingchu; Yang, Liusi; Wei, Jinquan; Peng, Hailin; Cao, Anyuan

    2015-08-12

    Nanocarbon structures such as carbon nanotubes (CNTs) and graphene (G) have been combined with crystalline silicon wafers to fabricate nanocarbon-Si solar cells. Here, we show that the contact between the nanocarbon and Si plays an important role in the solar cell performance. An asymmetrically configured CNT-G composite film was used to create either CNT-Si dominating or G-Si dominating junctions, resulting in obviously different solar cell behavior in pristine state. Typically, solar cells with direct G-Si contacts (versus CNT-Si) exhibit better characteristics due to improved junction quality and larger contact area. On the basis of the composite film, the obtained CNT-G-Si solar cells reach power conversion efficiencies of 14.88% under air mass 1.5, 88 mW/cm2 illumination through established techniques such as acid doping and colloidal antireflection. Engineering the nanocarbon-Si contact is therefore a possible route for further improving the performance of this type of solar cells.

  6. Hydrogen related point defects in silicon based layers: dbnd Si(·)H and tbnd SiOOH

    NASA Astrophysics Data System (ADS)

    Dřínek, Vladislav; Vacek, Karel; Yuzhakov, Gleb; Bastl, Zdeněk; Naumov, Sergej

    2006-04-01

    Layers prepared by pulsed TEA CO 2 pulsed laser ablation (PLA) of SiO and SiO 2 targets in helium were exposed to hydrogen and deuterium atmosphere up to several kPa. The deposited layers were investigated by FTIR, EPR and XP spectroscopy. Among various Si species silyl radical dbnd Si(·)H ( dbnd Si(·)D) at 2166 (1568) cm -1—H(I) center—and silyl hydroperoxide tbnd SiOOH ( tbnd SiOOD) at 3587 (2648) cm -1 were identified in FTIR spectra. Chemical pathways for production of these species are discussed. Experimental results are supported by quantum chemical calculations.

  7. Molecular dynamics simulation of C/Si ratio effect on the irradiation swelling of β-SiC

    NASA Astrophysics Data System (ADS)

    Li, Yingying; Xiao, Wei; Li, Huailin

    2016-11-01

    The C/Si atom ratio effect on the irradiation swelling of β-SiC is studied using molecular dynamics (MD) simulations. The irradiation swelling decreases with the increase of C/Si ratio under the same irradiation conditions. The carbon cluster is the key issue for the irradiation swelling of non-stoichiometric SiC. The carbon cluster size increases with the increase of C/Si ratio and the number of cluster decreases with the increase of C/Si ratio after irradiation process. An analytical model is established to describe the C/Si ratio effect on irradiation swelling and it fits the MD data well.

  8. Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace

    NASA Astrophysics Data System (ADS)

    Miyata, Noriyuki; Watanabe, Heiji; Ichikawa, Masakazu

    1998-04-01

    SiO2/Si(111) interfaces formed by a furnace oxidation are studied by a scanning reflection electron microscopy (SREM). SREM observation indicates that the initial atomic steps on a Si(111) surface are preserved at the SiO2/Si interface and the interfacial steps do not move laterally even after 48-nm-thick oxidation. A profile analysis of reflection high-energy electron diffraction shows that the SiO2/Si interface consists of islands which have a diameter of about 5 nm and monolayer depth. Our results indicate that the layer-by-layer oxidation caused by two-dimensional island nucleation proceeds under furnace oxidation.

  9. Microstructural characterization of as-cast Cr-Si alloys

    SciTech Connect

    Chad, V.M. Faria, M.I.S.T.; Coelho, G.C.; Nunes, C.A.; Suzuki, P.A.

    2008-01-15

    This work presents results of microstructural characterization of as-cast Cr-Si alloys. The alloys were prepared by arc melting pure Cr (min. 99.996%) and Si (min. 99.998%) powder mixtures under argon atmosphere in a water-cooled copper crucible with nonconsumable tungsten electrode and titanium getter. The phases were identified by scanning electron microscopy (SEM), using the back-scattered electron (BSE) image mode and X-ray diffraction (XRD). The results confirm the currently accepted Cr-Si phase diagram in terms of the invariant reactions and solid phases present in this system. Small corrections are proposed for the compositions of the liquid phase in the following reactions: (i) L {r_reversible} Cr{sub SS}+Cr{sub 3}Si, from 15 to 16 at.% Si; (ii) L+{alpha}Cr{sub 5}Si{sub 3} {r_reversible} CrSi, from 51 at.% Si to slightly above 53 at.% Si; (iii) L {r_reversible} CrSi+CrSi{sub 2}, from 56 to slightly above 57 at.% Si; (iv) L {r_reversible} CrSi{sub 2}+Si, from 82 to slightly above 85 at.% Si.

  10. Hysteresis in the Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

    2011-01-01

    Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

  11. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

    SciTech Connect

    Demiroğlu, D.; Tatar, B.; Kazmanli, K.; Urgen, M.

    2013-12-16

    Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ{sub B}, diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

  12. Hydrogen silsequioxane-derived Si/SiO(x) nanospheres for high-capacity lithium storage materials.

    PubMed

    Park, Min-Sik; Park, Eunjun; Lee, Jaewoo; Jeong, Goojin; Kim, Ki Jae; Kim, Jung Ho; Kim, Young-Jun; Kim, Hansu

    2014-06-25

    Si/SiOx composite materials have been explored for their commercial possibility as high-performance anode materials for lithium ion batteries, but suffer from the complexity of and limited synthetic routes for their preparation. In this study, Si/SiOx nanospheres were developed using a nontoxic and precious-metal-free preparation method based on hydrogen silsesquioxane obtained from sol-gel reaction of triethoxysilane. The resulting Si/SiOx nanospheres with a uniform carbon coating layer show excellent cycle performance and rate capability with high-dimensional stability. This approach based on a scalable sol-gel reaction enables not only the development of Si/SiOx with various nanostructured forms, but also reduced production cost for mass production of nanostructured Si/SiOx.

  13. Influence of remaining C on hardness and emissivity of SiC/SiO 2 nanocomposite coating

    NASA Astrophysics Data System (ADS)

    Yi, J.; He, X. D.; Sun, Y.; Li, Y.; Li, M. W.

    2007-06-01

    SiC/SiO 2 nanocomposite coating was deposited by electron beam-physical vapor deposition (EB-PVD) through depositing SiC target on pre-oxidized 316 stainless steel (SS) substrate. High melting point component C remained and covered on the surface of ingot after evaporation. When SiC ingot was reused, remaining C had an effect on the composition, hardness and emissivity of SiC/SiO 2 nanocomposite coating. The composition of ingot and coating was studied by X-ray photoelectron spectroscopy (XPS). The influence of remaining C on hardness and spectral normal emissivity of SiC/SiO 2 nanocomposite coating was investigated by nanoindentation and Fourier transform infrared spectrum (FTIR), respectively. The results show that remaining C has a large effect on hardness and a minor effect on spectral normal emissivity of SiC/SiO 2 nanocomposite coating.

  14. Texture of CoSi2 Films on Si(111) (110) and (001) Substrates

    SciTech Connect

    K De Keyser; C Detavernier; J Jordan-Sweet; C Lavoie

    2011-12-31

    Synchrotron radiation was used to study the texture of polycrystalline CoSi{sub 2} films that were formed by a solid-state reaction between a 30 nm Co film and Si(111), (110) and (001) substrates. All films were strongly textured, and several texture components were identified. We discuss the simultaneous occurrence of axiotaxy (i.e. alignment of lattice planes across the interface) and several different types of epitaxy in each of the films. Comparison of the different texture components observed on the three substrate orientations suggests a strong preference for the alignment of CoSi{sub 2}{l_brace}110{r_brace} planes in the film with Si{l_brace}110{r_brace} planes in the substrate, and twinning around Si[111] directions.

  15. A model for thermal oxidation of Si and SiC including material expansion

    NASA Astrophysics Data System (ADS)

    Christen, T.; Ioannidis, A.; Winkelmann, C.

    2015-02-01

    A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

  16. Low activation brazing materials and techniques for SiC f/SiC composites

    NASA Astrophysics Data System (ADS)

    Riccardi, B.; Nannetti, C. A.; Petrisor, T.; Sacchetti, M.

    2002-12-01

    A low activation brazing technique for silicon carbide fiber reinforced silicon carbide matrix composites (SiC f/SiC) is presented; this technique is based on the use of the 78Si-22Ti (wt%) eutectic alloy. The joints obtained take advantage of a melting point able to avoid composite fibre-interface degradation. All the joints showed absence of discontinuities and defects at the interface and a fine eutectic structure. Moreover, the joint layer appeared well adherent both to the matrix and the fibre interphase and the brazing alloy infiltration looked sufficiently controlled. The joints of SiC f/SiC composites showed 71±10 MPa almost pure shear strength at RT and up to 70 MPa at 600 °C.

  17. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Conde, J. C.; Chiussi, S.; Serra, C.; González, P.

    2016-01-01

    193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3 μm diameter and around 25 nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240 mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2 μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.

  18. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays.

    PubMed

    Wu, Wengang; Mao, Haiyang; Han, Xiang; Xu, Jun; Wang, Weibing

    2016-07-29

    This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications. PMID:27319739

  19. Metal/silicon interface formation - The Ni/Si and Pd/Si systems

    NASA Technical Reports Server (NTRS)

    Grunthaner, P. J.; Grunthaner, F. J.; Madhukar, A.; Mayer, J. W.

    1981-01-01

    The valence level spectra of the Ni/Si and Pd/Si systems have been investigated using high resolution X-ray photoelectron spectroscopy. Temperature dependence studies for Ni deposited on thin thermal SiO2 demonstrate the importance of metal aggregation effects in the interpretation of binding energies as chemical shifts. Temperature studies for the Ni/Si system indicate that substantial chemical interaction occurs at the interface at temperatures as low as 100 K. These studies also show the presence of Ni in interstitial voids in the Si near the interface. A comparative study of the core and valence band features for the Ni and Pd silicides provides many valuable insights and a self-consistent picture of the attendent valence charge redistribution and its influence on the observed chemical shifts.

  20. SiC/SiC Ceramic Matrix Composites Developed for High-Temperature Space Transportation Applications

    NASA Technical Reports Server (NTRS)

    Kiser, J. Douglas; Bhatt, Ramakrishna, T.; Morscher, Gregory N.; Yun, Hee Mann; DiCarlo, James A.; Petko, Jeanne F.

    2005-01-01

    Researchers at the NASA Glenn Research Center have been developing durable, high-temperature ceramic matrix composites (CMCs) with silicon carbide (SiC) matrices and SiC or carbon fibers for use in advanced reusable launch vehicle propulsion and airframe applications in the Next Generation Launch Technology (NGLT) Program. These CMCs weigh less and are more durable than competing metallic alloys, and they are tougher than silicon-based monolithic ceramics. Because of their high specific strength and durability at high temperatures, CMCs such as C/SiC (carbon- fiber-reinforced silicon carbide) and SiC/SiC (silicon-carbide-fiber-reinforced silicon carbide) may increase vehicle performance and safety significantly and reduce the cost of transporting payloads to orbit.

  1. Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.; Manion, S. J.; Milliken, S. J.; Pike, W. T.; Fathauer, R. W.

    1995-01-01

    The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

  2. Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol'tsman, G.; Zorman, C. A.; Mehregany, M.

    2007-08-01

    The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.

  3. A model for thermal oxidation of Si and SiC including material expansion

    SciTech Connect

    Christen, T. Ioannidis, A.; Winkelmann, C.

    2015-02-28

    A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

  4. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays

    NASA Astrophysics Data System (ADS)

    Wu, Wengang; Mao, Haiyang; Han, Xiang; Xu, Jun; Wang, Weibing

    2016-07-01

    This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications.

  5. Carbon Clusters as Possible Defects in the SiC-SiO2 Interface

    SciTech Connect

    Dang, Hongli; Ramkumar, Gudipati; Yang, Liu; Li, Ying; Peterson, Heather; Chisholm, Matthew F; Biggerstaff, Trinity Leigh; Duscher, Gerd; Wang, Sanwu

    2009-01-01

    High state densities in the band gap of the SiC-SiO2 interface significantly reduce the channel mobilities in SiC-based high-temperature/high-power microelectronics. Investigations of the nature of the interface defects are thus of great importance. While several possible defects including very small carbon clusters with up to four carbon atoms have been identified by first-principles theory, larger carbon clusters as possible defects have attracted less attention. Here, we report first-principles quantum-mechanical calculations for two larger carbon clusters, the C10 ring and the C20 fullerence, in the SiC-SiO2 interface. We find that both carbon clusters introduce significant states in the band gap. The states extend over the entire band gap with higher densities in the upper half of the gap, thus accounting for some of the interface trap densities observed experimentally

  6. Mechanical properties and microstructure of a novel SiC/SiC joint

    SciTech Connect

    Uenal, O.; Anderson, I.E.; Nosrati, M.

    1997-11-01

    A low temperature bonding agent containing the mixture of a preceramic oligomeric polymer, the Si-Al powder and the boron powder, was applied to the SiC/SiC composites. The curing was made by heat-treatments at 1000{degrees}C, 1200{degrees}C and 1400{degrees}C for 5 hours in air. Mechanical properties of the joints were evaluated by flexure tests at room temperature. Average joint strength at all three curing temperature was 95 MPa while the shear strength was about 50 MPa. Joint regions were porous and contained several phases including SiC, Al{sub 2}O{sub 3}, Al, Si, C, AlB{sub 10} and residual polymer.

  7. Si6H12/Polymer Inks for Electrospinning a-Si Nanowire Lithium Ion Battery Anodes

    SciTech Connect

    Schulz, Douglas L.; Hoey, Justin; Smith, Jeremiah; Elangovan, Arumugasamy; Wu, Xiangfa; Akhatov, Iskander; Payne, Scott; Moore, Jayma; Boudjouk, Philip; Pederson, Larry; Xiao, Jie; Zhang, Jiguang

    2010-08-04

    Amorphous silicon nanowires 'a-SiNWs' have been prepared by electrospinning a liquid silane-based precursor. Cyclohexasilane 'Si6H12' was admixed with poly-methyl methacrylate (PMMA) in toluene giving an ink that was electrospun into the Si6H12/PPMA wires with diameters of 50-2000 nm. Raman spectroscopy revealed that thermal treatment at 350 C transforms this deposit into a-SiNWs. These materials were coated with a thin carbon layer and then tested as half-cells where a reasonable plateau in electrochemical cycling was observed after an initial capacity fade. Additionally, porous a-SiNWs were realized when the thermally decomposable binder polypropylene carbonate/polycyclohexene carbonate was used as the polymer carrier.

  8. Interfacial transformations in the a-SiC/a-Si/6H-SiC structure caused by high-temperature (1500°C) annealing

    NASA Astrophysics Data System (ADS)

    Ivanov, P. A.; Samsonova, T. P.

    2008-07-01

    We have studied the reactions that take place at interfaces in an a-SiC/a-Si/6H-SiC sandwich structure, which was obtained by the sequential deposition of amorphous silicon (a-Si) and amorphous silicon carbide (a-SiC) onto a 6H-SiC substrate by ion sputtering in vacuum and then annealed at 1500°C (i.e., above the melting point of silicon). It is shown that the annealing leads to complete îdissipationî of the silicon film in SiC, probably as a result of the dissolution of carbon in the silicon melt and the diffusion of silicon into SiC.

  9. Rational Design of Immunostimulatory siRNAs

    PubMed Central

    Gantier, Michael P; Tong, Stephen; Behlke, Mark A; Irving, Aaron T; Lappas, Martha; Nilsson, Ulrika W; Latz, Eicke; McMillan, Nigel AJ; Williams, Bryan RG

    2010-01-01

    Short-interfering RNAs (siRNAs) have engendered much enthusiasm for their ability to silence the expression of specific genes. However, it is now well established that siRNAs, depending on their sequence, can be variably sensed by the innate immune system through recruitment of toll-like receptors 7 and 8 (TLR7/8). Here, we aimed to identify sequence-based modifications allowing for the design of bifunctional siRNAs with both proinflammatory and specific silencing activities, and with potentially increased therapeutic benefits. We found that the introduction of a micro-RNA (miRNA)-like nonpairing uridine-bulge in the passenger strand robustly increased immunostimulatory activity on human immune cells. This sequence modification had no effect on the silencing efficiency of the siRNA. Increased immunostimulation with the uridine-bulge design was specific to human cells, and conserved silencing efficiency required a Dicer-substrate scaffold. The increased cytokine production with the uridine-bulge design resulted in enhanced protection against Semliki Forest virus (SFV) infection, in viral assays. Thus, we characterize a design scaffold applicable to any given siRNA sequence, that results in increased innate immune activation without affecting gene silencing. Our data suggest that this sequence modification coupled with structural modification differentially recruits human TLR8 over TLR7, and could have potential application in antiviral therapies. PMID:20125126

  10. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

    NASA Astrophysics Data System (ADS)

    Conde, J. C.; Martín, E.; Chiussi, S.; Gontad, F.; Serra, C.; González, P.

    2010-07-01

    Ultraviolet (UV) Excimer laser assisted processing is an alternative strategy for producing patterned silicon germanium heterostructures. We numerically analyzed the effects caused by pulsed 193 Excimer laser radiation impinging on patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bilayers deposited on a crystalline silicon substrate [Si(100)]. The proposed two dimensional axisymmetric numerical model allowed us to estimate the temperature and concentration gradients caused by the laser induced rapid melting and solidification processes. Energy density dependence of maximum melting depth and melting time evolution as well as three dimensional temperature and element distribution have been simulated and compared with experimentally obtained results.

  11. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

    SciTech Connect

    Conde, J. C.; Chiussi, S.; Gontad, F.; Gonzalez, P.; Martin, E.; Serra, C.

    2010-07-05

    Ultraviolet (UV) Excimer laser assisted processing is an alternative strategy for producing patterned silicon germanium heterostructures. We numerically analyzed the effects caused by pulsed 193 Excimer laser radiation impinging on patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bilayers deposited on a crystalline silicon substrate [Si(100)]. The proposed two dimensional axisymmetric numerical model allowed us to estimate the temperature and concentration gradients caused by the laser induced rapid melting and solidification processes. Energy density dependence of maximum melting depth and melting time evolution as well as three dimensional temperature and element distribution have been simulated and compared with experimentally obtained results.

  12. Flexible micromorph tandem a-Si/{mu}c-Si solar cells

    SciTech Connect

    Soederstroem, T.; Haug, F.-J.; Terrazzoni-Daudrix, V.; Ballif, C.

    2010-01-15

    The deposition of a stack of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) tandem thin film silicon solar cells (micromorph) requires at least twice the time used for a single junction a-Si:H cell. However, micromorph devices have a higher potential efficiency, thanks to the broader absorption spectrum of {mu}c-Si:H material. High efficiencies can only be achieved by mitigating the nanocracks in the {mu}c-Si:H cell and the light-induced degradation of the a-Si:H cell. As a result, {mu}c-Si:H cell has to grow on a smooth substrate with large periodicity (>1 {mu}m) and the a-Si:H cell on sharp pyramids with smaller feature size ({approx}350 nm) to strongly scatter the light in the weak absorption spectra of a-Si:H material. The asymmetric intermediate reflector introduced in this work uncouples the growth and light scattering issues of the tandem micromorph solar cells. The stabilized efficiency of the tandem n-i-p/n-i-p micromorph is increased by a relative 15% compared to a cell without AIR and 32% in relative compared to an a-Si:H single junction solar cells. The overall process (T<200 deg. C) is kept compatible with low cost plastic substrates. The best stabilized efficiency of a cell deposited on polyethylene-naphthalate plastic substrate is 9.8% after 1000 h of light soaking at V{sub oc}, 1 sun, and 50 deg. C.

  13. Near-Interface Defects in SiO2/SiC MOS Devices

    NASA Astrophysics Data System (ADS)

    Basile, A. F.; Mooney, P. M.

    2012-02-01

    The implementation of SiO2/SiC MOSFETS for high power applications has been hindered by the high density of near-interface states. We have developed a method to distinguish both the energy and spatial distribution of defect states near insulator-semiconductor interfaces through a comparison of the thermal emission energy extracted from constant capacitance transient spectroscopy (CCDLTS) measurements and the interface Fermi energy (FP). The dependence of FP on trap filling voltage at the CCDLTS peak temperature is determined from temperature-dependent 1MHz C-V curves. Capture by tunneling into oxide traps is detected in 4H- and 6H-SiC capacitors fabricated by oxidation followed by NO-annealing, with the difference in thermal emission energies consistent with the conduction band offsets of the two polytypes at the SiO2/SiC interface. Comparison with results from first principles calculations suggests that the observed oxide traps are CO=CO and interstitial Si [1]. SiC defects having energies close to the SiC conduction band are suggested to be carbon di-interstitial defects, (C2)i, introduced during standard oxidation [1]. Well-known traps introduced in SiC by ion-implantation are observed in 4H-SiC MOS capacitors fabricated by N-implantation followed by standard oxidation, thus validating this new method [2]. *A.F. Basile, et al., J. Appl. Phys. 109, 064514 (2011) *A.F. Basile, et al., J. Appl. Phys. 109, 114505 (2011).

  14. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency.

    PubMed

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-21

    A p-n junction was made on p-type Si〈100〉 wafer (15 × 15 × 0.2 mm(3) in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n(+) Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm(-2), the fill factor was 0.779 and the conversion efficiency was 18.97%.

  15. Flexible micromorph tandem a-Si/μc-Si solar cells

    NASA Astrophysics Data System (ADS)

    Söderström, T.; Haug, F.-J.; Terrazzoni-Daudrix, V.; Ballif, C.

    2010-01-01

    The deposition of a stack of amorphous (a-Si:H) and microcrystalline (μc-Si:H) tandem thin film silicon solar cells (micromorph) requires at least twice the time used for a single junction a-Si:H cell. However, micromorph devices have a higher potential efficiency, thanks to the broader absorption spectrum of μc-Si:H material. High efficiencies can only be achieved by mitigating the nanocracks in the μc-Si:H cell and the light-induced degradation of the a-Si:H cell. As a result, μc-Si:H cell has to grow on a smooth substrate with large periodicity (>1 μm) and the a-Si:H cell on sharp pyramids with smaller feature size (˜350 nm) to strongly scatter the light in the weak absorption spectra of a-Si:H material. The asymmetric intermediate reflector introduced in this work uncouples the growth and light scattering issues of the tandem micromorph solar cells. The stabilized efficiency of the tandem n-i-p/n-i-p micromorph is increased by a relative 15% compared to a cell without AIR and 32% in relative compared to an a-Si:H single junction solar cells. The overall process (T <200 °C) is kept compatible with low cost plastic substrates. The best stabilized efficiency of a cell deposited on polyethylene-naphthalate plastic substrate is 9.8% after 1000 h of light soaking at Voc, 1 sun, and 50 °C.

  16. Evaluation of the Machinability of Cast Ti-Si Alloys with Varying Si Content

    NASA Astrophysics Data System (ADS)

    Hsu, Hsueh-Chuan; Wu, Shih-Ching; Hsu, Shih-Kuang; Hsu, Chih-Cheng; Ho, Wen-Fu

    2016-05-01

    This study evaluated the machinability of a series of binary Ti-Si alloys with a goal of developing a titanium alloy with better machinability than commercially pure titanium (c.p. Ti). The alloys were slotted using a milling machine and end mills under four cutting conditions. Machinability was evaluated through cutting force. The experimental results indicate that alloying with Si significantly improved the machinability of c.p. Ti in terms of cutting force under the present cutting conditions. As the Si content increases, the cutting force decreases then greatly increases. The cutting forces of c.p. Ti and the Ti-Si alloys increased as the feed rate increased from 30 to 60 m/min under the cutting speed of 55 or 110 m/min. The cutting force of Ti-5Si at cutting speed 55 m/min was approximately 49% lower than that of c.p. Ti; at cutting speed 110 m/min, it was approximately 62% lower than that of c.p. Ti. The cutting force of Ti-10Si was significantly higher than those of the other Ti-Si alloys and c.p. Ti, a result that can be explained by a higher degree of hardness (626 HV) and larger amounts of Ti5Si3 (47.10 vol.%). For Ti-5Si, there was no obvious adhesion of chips observed on the cut surfaces. Furthermore, the specimens had the lowest surface roughness (Ra) values, approximately 0.3-0.4 μm, under the four cutting conditions. When cutting force, chip length, and surface roughness results are considered, the Ti-5Si alloy developed in this study is a viable candidate for machining.

  17. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency.

    PubMed

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-21

    A p-n junction was made on p-type Si〈100〉 wafer (15 × 15 × 0.2 mm(3) in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n(+) Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm(-2), the fill factor was 0.779 and the conversion efficiency was 18.97%. PMID:27640447

  18. Evaluation of the Machinability of Cast Ti-Si Alloys with Varying Si Content

    NASA Astrophysics Data System (ADS)

    Hsu, Hsueh-Chuan; Wu, Shih-Ching; Hsu, Shih-Kuang; Hsu, Chih-Cheng; Ho, Wen-Fu

    2016-05-01

    This study evaluated the machinability of a series of binary Ti-Si alloys with a goal of developing a titanium alloy with better machinability than commercially pure titanium (c.p. Ti). The alloys were slotted using a milling machine and end mills under four cutting conditions. Machinability was evaluated through cutting force. The experimental results indicate that alloying with Si significantly improved the machinability of c.p. Ti in terms of cutting force under the present cutting conditions. As the Si content increases, the cutting force decreases then greatly increases. The cutting forces of c.p. Ti and the Ti-Si alloys increased as the feed rate increased from 30 to 60 m/min under the cutting speed of 55 or 110 m/min. The cutting force of Ti-5Si at cutting speed 55 m/min was approximately 49% lower than that of c.p. Ti; at cutting speed 110 m/min, it was approximately 62% lower than that of c.p. Ti. The cutting force of Ti-10Si was significantly higher than those of the other Ti-Si alloys and c.p. Ti, a result that can be explained by a higher degree of hardness (626 HV) and larger amounts of Ti5Si3 (47.10 vol.%). For Ti-5Si, there was no obvious adhesion of chips observed on the cut surfaces. Furthermore, the specimens had the lowest surface roughness (Ra) values, approximately 0.3-0.4 μm, under the four cutting conditions. When cutting force, chip length, and surface roughness results are considered, the Ti-5Si alloy developed in this study is a viable candidate for machining.

  19. Generation of core-shell structures and segregation of dopants in Si/SiO2 nanowires

    NASA Astrophysics Data System (ADS)

    Kim, Sunghyun; Park, Ji-Sang; Chang, K. J.

    2013-03-01

    Oxidized Si nanowires (SiNWs) are usually synthesized by subsequent thermal annealing of as-grown SiNWs. It has been observed that B diffusivity is enhanced during thermal annealing in SiNWs, similar to the phenomena called transient enhanced diffusion or oxidation enhanced diffusion in planar Si/SiO2 interfaces. However, previous theoretical studies have been focused on hydrogen or hydroxyl terminated SiNWs. In this work, we generate realistic atomic models for oxidized SiNWs in which crystalline Si core is sheathed by amorphous SiO2 by using a combined approach of classical molecular dynamics simulations with first-principles density functional calculations. For realistic core-shell structures, we investigate the stability and segregation behavior of B and P dopants. A single substitutional B is more stable in the Si core, with a very small energy variation with the radial position of B. On the other hand, B dopants easily segregate to the oxide shell with the aid of Si self-interstitials generated during thermal oxidation. In contrast to B dopants, P dopants prefer to reside in the Si core even in the presence of Si self-interstitials but tend to aggregate in the Si region near the interface, forming nearest-neighbor donor pairs which are electrically inactive.

  20. Charge trapping studies in SiO2 using high current injection from Si-rich SiO2 films

    NASA Astrophysics Data System (ADS)

    DiMaria, D. J.; Ghez, R.; Dong, D. W.

    1980-09-01

    The high electron injection phenomenon of Si-rich SiO2 films deposited on top of SiO2 can be used for novel charge trapping studies of sites normally present or purposely introduced in the SiO2. From the position and extent of current ledges observed in dark current as a function of ramped gate voltage, the capture cross section and total number of traps can be determined. Using these measurements with capacitance as a function of gate voltage, the trap distribution centroid and number of trapped charges can also be found. Several experimental examples are given including trapping in thermal SiO2, in chemically vapor deposited (CVD) SiO2, and on W, less than a monolayer thick, sandwiched between thermal and CVD SiO2. These stepped insulator metal-insulator-silicon (SI-MIS) ramp I-V results for the trapping parameters are shown to be in good agreement with those determined using the conventional photo I-V and avalanche injection with flat-band voltage tracking techniques. A numerical simulation of the ramp I-V measurements, assuming electric field-enhanced Fowler-Nordheim tunneling at the Si-rich-SiO2-SiO2 interface, is described and is shown to give good agreement with the experimental data. These techniques for SI-MIS structures are faster and easier, although less accurate than the conventional techniques.

  1. The Stellar Imager (SI) "Vision Mission"

    NASA Technical Reports Server (NTRS)

    Carpenter, K.; Danchi, W.; Leitner, J.; Liu, A.; Lyon, R.; Mazzuca, L.; Moe, R.; Chenette, D.; Schrijver, C.; Kilston, S.

    2004-01-01

    The Stellar Imager (SI) is a Vision Mission in the Sun-Earth Connection (SEC) NASA Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, at ultraviolet wavelengths, on the order of 100 micro-arcsec and baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (greater than 20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. In this paper, we present an update on the ongoing SI mission concept and technology development studies.

  2. The Stellar Imager (SI) "Vision Mission"

    NASA Technical Reports Server (NTRS)

    Carpenter, K.; Danchi, W.; Leitner, J.; Liu, A.; Lyon, R.; Mazzuca, L.; Moe, R.; Chenette, D.; Schrijver, C.; Kilston, S.

    2004-01-01

    The Stellar Imager (SI) is a Vision Mission in the Sun-Earth Connection (SEC) NASA Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, a t ultraviolet wavelengths, on the order of 100 micro-arcsec and baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (>20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. In this paper, we present an update on the ongoing SI mission concept and technology development studies.

  3. Recent advances in siRNA delivery.

    PubMed

    Sarisozen, Can; Salzano, Giuseppina; Torchilin, Vladimir P

    2015-12-01

    In the 1990s an unexpected gene-silencing phenomena in plants, the later called RNA interference (RNAi), perplexed scientists. Following the proof of activity in mammalian cells, small interfering RNAs (siRNAs) have quickly crept into biomedical research as a new powerful tool for the potential treatment of different human diseases based on altered gene expression. In the past decades, several promising data from ongoing clinical trials have been reported. However, despite surprising successes in many pre-clinical studies, concrete obstacles still need to be overcome to translate therapeutic siRNAs into clinical reality. Here, we provide an update on the recent advances of RNAi-based therapeutics and highlight novel synthetic platforms for the intracellular delivery of siRNAs. PMID:26609865

  4. Si-based infrared optical filters

    NASA Astrophysics Data System (ADS)

    Balčytis, Armandas; Ryu, Meguya; Seniutinas, Gediminas; Nishijima, Yoshiaki; Hikima, Yuta; Zamengo, Massimiliano; Petruškevičius, Raimondas; Morikawa, Junko; Juodkazis, Saulius

    2015-12-01

    Pyramidal silicon nanospikes, termed black-Si (b-Si), with controlled height of 0.2 to 1 μm, were fabricated by plasma etching over 3-in wafers and were shown to act as variable density filters in a wide range of the IR spectrum 2.5 to 20 μm, with transmission and its spectral gradient dependent on the height of the spikes. Such variable density IR filters can be utilized for imaging and monitoring applications. Narrow IR notch filters were realized with gold mesh arrays on Si wafers prospective for applications in surface-enhanced IR absorption sensing and "cold materials" for heat radiation into atmospheric IR transmission window. Both types of filters for IR: spectrally variable and notch are made by simple fabrication methods.

  5. Natural Carriers for siRNA Delivery.

    PubMed

    Karunaratne, D Nedra; Jafari, Mousa; Ranatunga, R J K Udayana; Siriwardhana, Asitha

    2015-01-01

    This review is based on carriers of natural origin such as polysaccharides, proteins, and cell derived entities which have been used for delivery of siRNA. To realize the therapeutic potential of a delivery system, the role of the carrier is of utmost importance. Historical aspects of viral vectors, the first carriers of genes are briefly outlined. Chitosan, one of the extensively experimented carriers, alginates and other polysaccharides have shown success in siRNA delivery. Peptides of natural origin and mimics thereof have emerged as another versatile carrier. Exosomes and mini cells of cellular origin are the newest entrants to the area of siRNA delivery and probably the closest one can get to a natural carrier. In many of the carriers, modifications have provided better efficiency in delivery. The salient features of the carriers and their advantages and disadvantages are also reviewed.

  6. The use of Ge/Si ratios to quantify Si transformations in grassland ecosystems

    NASA Astrophysics Data System (ADS)

    Blecker, S. W.; Derry, L. A.; Chadwick, O. A.; Kelly, E. F.

    2005-12-01

    Germanium (Ge) has been shown to behave as a heavy isotope of silicon (Si), enabling the use of Ge/Si ratios as a weathering tracer in terrestrial environments. The two major mechanisms of Ge/Si fractionation in soils result from mineral weathering reactions and biogenic silica formation by plants. The role of plants in Ge fractionation has been deduced from relatively few field studies, and geochemical Ge fractionation data in temperate systems are lacking. The objectives of this research were to quantify biologic Ge fractionation, and to utilize differences in Ge/Si values among the major biogeochemical pools across a grassland bioclimosequence to examine stream water silica provenance. Quantification of biological Ge fractionation was carried out under controlled experimental conditions. Plant phytoliths grown in hydroponic solutions fractionated against Ge (comparing Ge/Sisolution with Ge/Siphytolith) by an average of 82%. Differences in Ge/Si values between roots, stems, and leaves indicate fractionation likely occurs at the root/solution interface. Phytoliths from plants grown in two different soil mediums fractionated against Ge, averaging 44% to 63%, with no clear trends among the species. From the field study, the greater fractionation factor (Kw, where Kw = (Ge/Siclay)/(Ge/Sibedrock)) of the tallgrass (Kw =2.8) vs. shortgrass sites (Kw =1.4) results from the increased weathering intensity across the bioclimosequence. Plant phytoliths exhibit relatively low Ge/Si values (0.15-0.44; x =0.29; n=15), compared to those of the corresponding surface soil water Ge/Si (0.22-0.94; x =0.66; n=6). Stream water Ge/Si values along the grassland climosequence (0.07-1.29, x = 0.34; n = 20) are typical of natural water Ge/Si values. Higher groundwater Ge values (0.42-3.4; x = 1.3; n=16) may represent an increased residence time or contact with minerals of higher Ge/Si ratios. The lack of Ge/Si separation among the major terrestrial pools confounds stream Si provenance

  7. GaP/Si heterojunction Solar Cells

    SciTech Connect

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  8. Point Defects in SiC

    NASA Astrophysics Data System (ADS)

    Zvanut, Mary Ellen

    2004-03-01

    Production of high frequency, high power electronic devices using wide bandgap semiconductors has spurred renewed interest in point defects in SiC. Recent electron paramagnetic resonance (EPR) spectroscopy studies focus on centers in as-grown high purity semi-insulating substrates because intrinsic defects are thought to compensate unavoidable shallow centers, thus creating the high resistivity required. The EPR studies address the chemical/structural composition of the defects, the defect level (energy with respect to a band edge with which the defect can accept or release an electron) and thermal stability. Thus far, the positively charged carbon vacancy, the Si vacancy, a carbon-vacancy/carbon antisite pair, and several as yet-unidentified centers have been observed in as-grown electronic-grade 4H-SiC [1-3]. The talk will review the types of defects recently identified in SiC and discuss their possible relationship to compensation. The photo-induced EPR experiments used to determine defect levels will be discussed, with a particular focus on the carbon vacancy. The use of high frequency EPR to resolve the many different types of centers in SiC will also be covered. Finally, the presentation will review the thermal stability of the intrinsic defects detected in as-grown 4H SiC. 1. M. E. Zvanut and V. V. Konovalov, Appl. Phys. Lett. 80, 410 (2002). 2. N.T. Son, Z. Zolnai, and E. Janzen, Phys. Rev. B64, 2452xx (2003). 3. W.E. Carlos, E.R. Glaser, and B.V. Shanabrook, in Proceedings of the 22nd conference on Defects in Semiconductors, Aarhus, Denmark, July 2003.

  9. Cuboplexes: Topologically Active siRNA Delivery.

    PubMed

    Kim, Hojun; Leal, Cecilia

    2015-10-27

    RNAi technology is currently experiencing a revival due to remarkable improvements in efficacy and viability through oligonucleotide chemical manipulations and/or via their packaging into nanoscale carriers. At present, there is no FDA-approved system for siRNA technology in humans. The design of the next generation of siRNA carriers requires a deep understanding of how a nanoparticle's physicochemical properties truly impart biological stability and efficiency. For example, we now know that nanoparticles need to be sterically stabilized in order to meet adequate biodistribution profiles. At present, targeting, uptake, and, in particular, endosomal escape are among the most critical challenges impairing RNAi technologies. The disruption of endosomes encompasses membrane transformations (for example, pore formation) that cost significant elastic energy. Nanoparticle size and shape have been identified as relevant parameters impacting tissue accumulation and cellular uptake. In this paper, we demonstrate that the internal structure of lipid-based particles offers a different handle to promote endosomal membrane topological disruptions that enhance siRNA delivery. Specifically, we designed sterically stabilized lipid-based particles that differ from traditional liposomal systems by displaying highly ordered bicontinuous cubic internal structures that can be loaded with large amounts of siRNA. This system differs from traditional siRNA-containing liposomes (lipoplexes) as the particle-endosomal membrane interactions are controlled by elasticity energetics and not by electrostatics. The resulting "PEGylated cuboplex" has the ability to deliver siRNA and specifically knockdown genes with efficiencies that surpass those achieved by traditional lipoplex systems. PMID:26390340

  10. Microstructural development to toughen SiC

    SciTech Connect

    Moberlychan, W.J.; Cannon, R.M.; Chan, L.H.; Cao, J.J.; Gilbert, C.J.; Ritchie, R.O.; De Jonghe, L.C.

    1996-12-31

    SiC offers a promise for high strength applications at high temperature; however, poor fracture resistance has inhibited its utility. Recent developments to control microstructure during hot pressing have improved fracture toughness > 3 fold, while also improving strength 50% above that of a commercial SiC, Hexoloy. This ABC-SiC (designated for the Al, B, and C additives) utilizes liquid phase sintering to obtain full densification at 1,650 C, and to induce the {beta}-3C to {alpha}-4H phase transformation below 1,900 C. Interlocking, plate-like, {alpha} grains, coupled with a thin ({approximately}1 nm) amorphous layer, provide for tortuous intergranular fracture and high toughness. This study focuses on the developing microstructure; how the {alpha}-4H polytype grow as a stacking modification of the {beta}-3C grains, and how amorphous grain boundaries and crystalline triple point phases develop and interact with the crack geometry. HR-TEM and Image-Filtered EELS characterize the amorphous grain boundaries. Field Emission-SEM, EDS and Auger Electron Spectroscopy characterize the fracture morphology and the chemistry of grain boundaries and triple points. Electron Diffraction and HR-TEM depict an epitaxial relationship between triple point phases (Al{sub 8}B{sub 4}C{sub 7} and Al{sub 4}O{sub 4}C) and matrix {alpha}-SiC grains, the development of which affects the mechanical toughening. The transformation to toughen SiC is compared to the well-studied transformation processing in Si{sub 3}N{sub 4}. A distinct advantage is the interlocked nature of the plate-like grains, which causes strong elastic bridging behind the crack tip.

  11. Single-crystal, Si nanotubes, and their mechanical resonant properties.

    PubMed

    Quitoriano, Nathaniel J; Belov, Miro; Evoy, Stephane; Kamins, Theodore I

    2009-04-01

    Single-crystalline Si nanotubes (NTs) were fabricated using vapor-liquid-solid grown, Ge nanowires (NWs) as a template upon which a Si shell was deposited to first grow Ge-core, Si-shell NWs. The tips of these NWs were removed, enabling exposure of the Ge core to H(2)SO(4) and H(2)O(2). After removing the Ge core, single-crystalline Si NTs remained. In addition to growing these Ge-core, Si-shell NWs from a Si (111) substrate, these NWs were also grown horizontally from a vertical Si surface to enable the fabrication of horizontal NTs after focused ion-beam cutting and etching steps. The resonant properties of the Ge-core, Si-shell NW, and the Si NT after the cutting and etching steps were measured and found to have a quality factor, Q, of approximately 1800. PMID:19271766

  12. Ag on Si(111) from basic science to application

    SciTech Connect

    Belianinov, Aleksey

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  13. Generation of siRNA Nanosheets for Efficient RNA Interference

    NASA Astrophysics Data System (ADS)

    Kim, Hyejin; Lee, Jae Sung; Lee, Jong Bum

    2016-04-01

    After the discovery of small interference RNA (siRNA), nanostructured siRNA delivery systems have been introduced to achieve an efficient regulation of the target gene expression. Here we report a new siRNA-generating two dimensional nanostructure in a formation of nanosized sheet. Inspired by tunable mechanical and functional properties of the previously reported RNA membrane, siRNA nanosized sheets (siRNA-NS) with multiple Dicer cleavage sites were prepared. The siRNA-NS has two dimensional structure, providing a large surface area for Dicer to cleave the siRNA-NS for the generation of functional siRNAs. Furthermore, downregulation of the cellular target gene expression was achieved by delivery of siRNA-NS without chemical modification of RNA strands or conjugation to other substances.

  14. SiC nanowires synthesized from graphene and silicon vapors

    NASA Astrophysics Data System (ADS)

    Weichenpei, Luo; Gong-yi, Li; Zengyong, Chu; Tianjiao, Hu; Xiaodong, Li; Xuefei, Zhang

    2016-04-01

    The preparation of silicon carbide (SiC) nanowires is basically important for its potential applications in nanodevices, nanocomposites, etc. In the present work, a simple route was reported to synthesize SiC nanowires by heating commercial graphene with silicon vapors and no catalyst. Characterization by scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, electron energy scattering, X-ray diffraction, and Raman dispersive spectrum demonstrates the products are composed of β-SiC crystal. The SiC nanowires have the average diameter of about 50 nm and length of tens of micrometers. The vapor-solid mechanism was employed to interpret the SiC nanowires growth. Gaseous SiO which was produced by the reaction of Si powders with its surface oxidation reacted with the solid graphene to form SiC crystal nuclei. And SiC crystal nuclei would act as active sites for further growing into nanowires.

  15. Generation of siRNA Nanosheets for Efficient RNA Interference

    PubMed Central

    Kim, Hyejin; Lee, Jae Sung; Lee, Jong Bum

    2016-01-01

    After the discovery of small interference RNA (siRNA), nanostructured siRNA delivery systems have been introduced to achieve an efficient regulation of the target gene expression. Here we report a new siRNA-generating two dimensional nanostructure in a formation of nanosized sheet. Inspired by tunable mechanical and functional properties of the previously reported RNA membrane, siRNA nanosized sheets (siRNA-NS) with multiple Dicer cleavage sites were prepared. The siRNA-NS has two dimensional structure, providing a large surface area for Dicer to cleave the siRNA-NS for the generation of functional siRNAs. Furthermore, downregulation of the cellular target gene expression was achieved by delivery of siRNA-NS without chemical modification of RNA strands or conjugation to other substances. PMID:27120975

  16. Generation of siRNA Nanosheets for Efficient RNA Interference.

    PubMed

    Kim, Hyejin; Lee, Jae Sung; Lee, Jong Bum

    2016-01-01

    After the discovery of small interference RNA (siRNA), nanostructured siRNA delivery systems have been introduced to achieve an efficient regulation of the target gene expression. Here we report a new siRNA-generating two dimensional nanostructure in a formation of nanosized sheet. Inspired by tunable mechanical and functional properties of the previously reported RNA membrane, siRNA nanosized sheets (siRNA-NS) with multiple Dicer cleavage sites were prepared. The siRNA-NS has two dimensional structure, providing a large surface area for Dicer to cleave the siRNA-NS for the generation of functional siRNAs. Furthermore, downregulation of the cellular target gene expression was achieved by delivery of siRNA-NS without chemical modification of RNA strands or conjugation to other substances. PMID:27120975

  17. CBED and FE Study of Thin Foil Relaxation in Cross-Section Samples of Si /Si1-xGex and Si /Si1-xGex /Si Heterostructures

    NASA Astrophysics Data System (ADS)

    Alexandre, L.; Jurczak, G.; Alfonso, C.; Saikly, W.; Grosjean, C.; Charai, A.; Thibault, J.

    In order to determine residual stress/strain fields in CMOS devices and validate tools used to quantify the strain field, we first studied residual strains in Si/Si1-xGex and Si/Si1-xGex/Si TEM samples. Because of sample thinning for TEM observations, elastic relaxation occurs and modifies the initial stress present in the bulk sample. Nevertheless, if the main parameters which play a role on the elastic relaxation process can be determined, we show that it is possible to reproduce from FE and diffraction simulations the complex profile of the HOLZ lines observed on experimental CBED patterns which makes possible the determination of the initial stress state.

  18. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    SciTech Connect

    Noor, Fatimah A. Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  19. The bis metallacyclic anion [U(N{SiMe3}2)(CH2SiMe2N{SiMe3})2]-.

    PubMed

    Bénaud, Olivier; Berthet, Jean-Claude; Thuéry, Pierre; Ephritikhine, Michel

    2010-09-01

    A series of bis metallacyclic compounds [M(THF)(x)UN*(CH(2)SiMe(2)N{SiMe(3)})(2)](n) [M = Na (2), Li (3), or K (4), N* = N(SiMe(3))(2)] were isolated from reactions of UCl(4) or [UN*(3)Cl] with MN* or by treatment of [UN*(2)(CH(2)SiMe(2)N{SiMe(3)})] (1) or [UN*(3)] with MN*, MH, or LiCH(2)SiMe(3) in tetrahydrofuran (THF). Crystals of 2a x 1/6n-pentane (x = 0), 2b (x = 1), 2c (x = 2), and 4b (x = 1) were obtained by crystallization of 2 and 4 from pentane, and [Na(18-crown-6)(THF)][UN*(CH(2)SiMe(2)N{SiMe(3)})(2)] (2d) and [Na(15-crown-5)][UN*(CH(2)SiMe(2)N{SiMe(3)})(2)] (2e) were formed upon addition of the crown ether. The crystal structures of 2a-2e and 4b exhibit the same [UN*(CH(2)SiMe(2)N{SiMe(3)})(2)] units which are linked to Na or K atoms via methylene or methyl groups, giving either tight cation-anion pairs (2d and 2e) or one-dimensional (1D) or two-dimensional (2D) polymeric compounds with Na or K atoms in bridging position between methylene groups of adjacent units. Reaction of 2 with CO gave the double insertion derivative [Na(2)(THF)U(2)N*(2)(OC{=CH(2)}SiMe(2)N{SiMe(3)})(4)] (5b) and [Na(15-crown-5)UN*(OC{=CH(2)}SiMe(2)N{SiMe(3)})(2)] (5c) in the presence of the crown ether. Thermal decomposition of 5b gave [Na(2)(THF)U(OC{=CH(2)}SiMe(2)N{SiMe(3)})(3)](2) (6), the product of CO insertion into the putative tris metallacycle [Na(2)(THF)(x)U(CH(2)SiMe(2)N{SiMe(3)})(3)]. The crystal structures of 5b, 5c, and 6 show the interaction of the Na atoms with the exocyclic C=CH(2) bonds. Diffusion of CO(2) into a THF solution of 2 led to the formation of [Na(THF)(x)UN*(OC{O}CH(2)SiMe(2)N{SiMe(3)})(2)] (7) which crystallized from pyridine/pentane to give [Na(THF)(2)(py)(2)UN*(OC{O}CH(2)SiMe(2)N{SiMe(3)})(2)] x 0.5 py (8 x 0.5 py), the first crystallographically characterized complex resulting from CO(2) insertion into a M(CH(2)SiMe(2)N{SiMe(3)}) metallacycle. Compound 2 reacted with I(2) to give [UN*(CH(2)SiMe(2)N{SiMe(3)})(N{SiMe(3)}SiMe(2)CH(2)I)] (9) which would

  20. Direct growth of graphene on Si(111)

    SciTech Connect

    Thanh Trung, Pham Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken; Campos-Delgado, Jessica; Raskin, Jean-Pierre; Hackens, Benoît; Santos, Cristiane N.

    2014-06-14

    Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

  1. SiC reinforced aluminide composites

    NASA Technical Reports Server (NTRS)

    Brindley, Pamela K.

    1987-01-01

    The tensile properties of SiC fiber, Ti3Al+Nb and SiC/Ti3Al+Nb composite have been determined from 300 to 1365 K. The composite results compared favorably to rule-of-mixtures (ROM) predictions in the intermediate temperature regime of 475 to 700 K. Deviations from ROM are discussed. Composite tensile results were compared on a strength/density basis to wrought superalloys and found to be superior. Fiber-matrix compatibility was characterized for the composite at 1250 and 1365 K for 1 to 100 hours.

  2. Bond-orientational order in liquid Si

    NASA Technical Reports Server (NTRS)

    Wang, Z. Q.; Stroud, D.

    1991-01-01

    Bond-orientational order in liquid Si via Monte Carlo simulation in conjuncation with empirical two- and three-body potentials of the form proposed by Stillinger and Weber are studied. Bond-orientational order (BOO) is described in terms of combinations of spherical harmonic functions. Liquid Si is found to have pronounced short-range BOO corresponding to l = 3, as expected for a structure with local tetrahedral order. No long-range BOO is found either in the equilibrium or the supercooled liquid. When the three-body potential is artificially removed, the tetrahedral bond-orientation order disappears and the liquid assumes a close-packed structure.

  3. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  4. Study of astrophysically important resonant states in 26Si by the 28Si(4He,6He)26Si reaction

    NASA Astrophysics Data System (ADS)

    Kwon, Young Kwan; Lee, C. S.; Moon, J. Y.; Lee, J. H.; Kim, J. Y.; Kubono, S.; Iwasa, N.; Inafiki, K.; Yamaguchi, H.; He, J. J.; Saito, A.; Wakabayashi, Y.; Fukijawa, H.; Amadio, G.; Khiem, L. H.; Tanaka, M.; Chen, A.; Kato, S.

    PoS(NIC-IX)024 , b, H. Yamaguchia, J. J. Hea , A. Saitoa , Y. Wakabayashia, H. Fujikawaa, G. The emission of 1.809 MeV gamma-ray from the first excited state of 26 Mg followed by beta- decay of 26 Al in its ground state (denoted as 26 Alg.s. ) has been identified by gamma-ray telescopes such the Compton Gamma-Ray Observatory (CGRO) [1]. To resolve controversy over the pos- sible sources of the observational 1.809 MeV gamma-rays, one needs accurate knowledge of the production rate of 26 Al. The 25 Al(p,γ)26Si reaction which is the competition reaction for produc- tion of 26 Alg.s. is one of the important subjects to be investigated. In this work, the astrophysically important 26 Si states above the proton threshold were studied via the 28 Si(4 He,6 He)26 Si reaction. We have preformed an angular distribution measurement using the high resolution QDD spectro- graph (PA) at Center for Nuclear Study (CNS), University of Tokyo. The experimental results and data analysis will be presented.

  5. Laser-induced convection nanostructures on SiON/Si interface

    SciTech Connect

    Maksimovic, A.; Lugomer, S.; Geretovszky, Zs.; Szoerenyi, T.

    2008-12-15

    The homogenized beam of an excimer KrF laser has been used to form rectangular millimeter-scale holes of vertical walls in the {approx}1 {mu}m thick silicon-oxynitride (SiON) thin film deposited on Si <111> wafer. The regular rectangular craters in SiON layer have the flat bottom surface reaching the SiON/Si interface. At the same time horizontal thermal gradient causes the formation of the nanoscale Marangoni convection structures at the SiON/Si interface. The inhomogeneous pattern of the roll structures can be divided into domains of regular, irregular, and chaotic organizations. The roll diameter is about 200 nm while their average wavelength, {lambda}, is, {approx}2 {mu}m, i.e., about ten times larger than the laser wavelength, and decreases with increasing number of pulses. Numerical simulation of the Marangoni domain roll structures based on the simple Swift-Hohenberg equation has reproduced all observed types of the roll organization, including those that show the evolution of dislocations from the Eckhause instability.

  6. High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Mueller, C. H.; Croke, E. T.

    2003-01-01

    High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

  7. Fiber creep rate and high-temperature properties of SiC/SiC composites

    SciTech Connect

    Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Henager, C.H. Jr.

    1998-03-01

    Results of studies aimed at relating the fiber creep rate to the subcritical crack growth rate and fracture properties of SiC/SiC composites have demonstrated that the crack growth rate in a bulk composite is controlled by the fiber creep rate. This result was demonstrated for Nicalon-CG and Hi-Nicalon fiber reinforced material where a 50--75 c shift in the creep strength of the fiber resulted in a similar shift in the crack growth rate of the composite. Irradiation enhanced creep of SiC fibers and matrix must also be considered in the performance assessment of SiC/SiC composites. The shape of the displacement versus time curve for composites containing Hi-Nicalon fibers were similar to those of the previously tested materials, containing Ceramic-grade fibers, that exhibited subcritical crack growth controlled by time-dependent relaxation of the fiber-bridging stresses due to fiber creep. The crack velocity in the CG-C composites at 1100 C in argon was very close to that of the Hi-C materials at 1150--1175 C, this roughly corresponds to the temperature differential shown by DiCarlo et al. to obtain the same relaxation in 1 hour bend stress relaxation (BSR) tests in the two fibers. This supports the hypothesis that subcritical crack growth in SiC/SiC composites is controlled by fiber creep.

  8. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation

    NASA Astrophysics Data System (ADS)

    Thi Trinh, Cham; Nakagawa, Yoshihiko; Hara, Kosuke O.; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

    2016-07-01

    We have succeeded in the observation of high photoresponsivity of orthorhombic BaSi2 film grown on crystalline Si by a vacuum evaporation method, raising the prospect of its promising application in high-efficiency thin-film solar cells. Photocurrent was observed at photon energies larger than 1.28 eV, which corresponds to the band gap of evaporated BaSi2 film, indicating that the photoresponsivity originates from the BaSi2 film. The effect of the substrate temperature on the film’s properties was also investigated. The films grown at a substrate temperature larger than 500 °C are single-phase polycrystalline BaSi2 films, while those grown at a substrate temperature of 400 °C is a mixture of phases. We confirmed that undoped evaporated BaSi2 films are an n-type material with high carrier concentration. High carrier lifetime of 4.8 and 2.7 μs can be found for the films grown at 500 °C and 400 °C, respectively. BaSi2 film grown at a substrate temperature of 500 °C, which is crack-free and single-phase, shows the best photoresponsivity. The maximum value of photocurrent was obtained at photon energy of 1.9 eV, corresponding to an external quantum efficiency of 22% under reverse applied voltage of 2 V.

  9. Advanced Woven SiC/SiC Composites for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.

    2007-01-01

    The temperature, stress, and environmental conditions of many gas turbine, hypersonic, and even nuclear applications make the use of woven SiC/SiC composites an attractive enabling material system. The development in SiC/SiC composites over the past few years has resulted in significant advances in high temperature performance so that now these materials are being pursued for several turbine airfoil and reusable hypersonic applications. The keys to maximizing stress capability and maximizing temperature capability will be outlined for SiC/SiC. These include the type of SiC fiber, the fiber-architecture, and the matrix processing approach which leads to a variety of matrix compositions and structure. It will also be shown that a range of mechanical, thermal, and permeability properties can be attained and tailored depending on the needs of an application. Finally, some of the remaining challenges will be discussed in order for the use of these composite systems to be fully realized.

  10. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    NASA Astrophysics Data System (ADS)

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  11. Possible Si-BASED Half-Metallic Materials:. MnSi46 Clathrates

    NASA Astrophysics Data System (ADS)

    Zhao, Zhi-Wei; Wang, Jing; Zhao, Hui-Yan; Liu, Ying

    The structural and magnetic properties of MSi46 (M = Mn, Fe, Co and Ni) clathrates have been studied using density functional theory calculations within the generalized gradient approximation. When the structures involve a dopant at the center of a Si20 or Si24 cage, the results show that the neighboring atoms around the dopant are drawn in toward the center. Some of the silicon clathrates with a Mn or Co dopant at the center site of a Si20 cage, or a Mn, Fe or Ni dopant at the center site of a Si24 cage are found to be half-metallic materials with large magnetic moments, and others with a Fe or Ni dopant at the center site of a Si20 cage or a Co dopant at the center site of a Si24 cage display semi-metallic characters. In particular, MnSi46 with a half-metallic gap of 0.70 eV and a magnetic moment of 5.00 μB shows promise for applications in the field of spintronics.

  12. Texture of NiSi Films on Si(001), (111), and (110) Substrates

    SciTech Connect

    Detavernier,C.; Jordan-Sweet, J.; Lavoie, C.

    2008-01-01

    Synchrotron radiation was used to study the texture of poly-crystalline NiSi films that were formed by a solid state reaction between a 30 nm Ni film and Si(001), (111), and (110) substrates. All films were strongly textured, and the different texture components were identified. Apart from the spots and/or circles characteristic of epitaxy or fiber texture, the pole figures contained symmetrical, though complex, patterns of lines. These lines are characteristic of axiotaxy, whereby NiSi grains preferentially align their (211)- or (202)-type planes parallel to Si(110)-type planes in each of the substrates. Since the spacing between NiSi(211) or NiSi(202) planes is almost identical to the spacing of 1.920?Angstroms between Si(220) planes, the alignment of these planes results in a boundary structure that is periodic along a single direction in the plane of the interface. Intensity variations along the lines on the pole figures are also explained by the degree of periodicity of the interface. The brightest spots on the lines correspond to interface structures for which periodicity is achieved along two independent directions within the plane of the interface.

  13. Enhancing photoluminescence properties of SiC/SiO2 coaxial nanocables by making oxygen vacancies.

    PubMed

    Liu, Wenna; Chen, Junhong; Yang, Tao; Chou, Kuo-Chih; Hou, Xinmei

    2016-09-14

    Coaxial nanocables (CNs) with an SiC core and a SiO2 shell were fabricated at a large scale by a simple and low cost method. The thickness of the SiO2 shell could be controlled by etching in 1 M NaOH aqueous solution for different amounts of time. XRD, SEM, TEM, HRTEM, PL and UV-Vis spectra were adopted to investigate the morphology and optical properties of the obtained SiC/SiO2CNs. Blue photoluminescence was observed at room temperature from the coaxial structure. The intensity of the single emission band at 468 nm (2.65 eV) exhibited a strong dependence on the thickness of the SiO2 layer and was significantly enhanced when the outer SiO2 shell had a thickness of 2.8 nm. The enhancement effect was attributed to oxygen vacancies (OV) and this was verified by deliberately enriching the surface OV through hydrogen treatment. PMID:27503431

  14. Partitioning of Si and platinum group elements between liquid and solid Fe-Si alloys

    NASA Astrophysics Data System (ADS)

    Morard, G.; Siebert, J.; Badro, J.

    2014-05-01

    Crystallization of the Earth's inner core fractionates major and minor elements between the solid and liquid metal, leaving physical and geochemical imprints on the Earth's core. For example, the density jump observed at the Inner Core Boundary (ICB) is related to the preferential partitioning of lighter elements in the liquid outer core. The fractionation of Os, Re and Pt between liquid and solid during inner core crystallization has been invoked as a process that explains the observed Os isotopic signature of mantle plume-derived lavas (Brandon et al., 1998; Brandon and Walker, 2005) in terms of core-mantle interaction. In this article we measured partitioning of Si, Os, Re and Pt between liquid and solid metal. Isobaric (2 GPa) experiments were conducted in a piston-cylinder press at temperatures between 1250 °C and 1600 °C in which an imposed thermal gradient through the sample provided solid-liquid coexistence in the Fe-Si system. We determined the narrow melting loop in the Fe-Si system using Si partitioning values and showed that order-disorder transition in the Fe-Si solid phases can have a large effect on Si partitioning. We also found constant partition coefficients (DOs, DPt, DRe) between liquid and solid metal, for Si concentrations ranging from 2 to 12 wt%. The compact structure of Fe-Si liquid alloys is compatible with incorporation of Si and platinum group elements (PGEs) elements precluding solid-liquid fractionation. Such phase diagram properties are relevant for other light elements such as S and C at high pressure and is not consistent with inter-elemental fractionation of PGEs during metal crystallization at Earth's inner core conditions. We therefore propose that the peculiar Os isotopic signature observed in plume-derived lavas is more likely explained by mantle source heterogeneity (Meibom et al., 2002; Baker and Krogh Jensen, 2004; Luguet et al., 2008).

  15. Ultraviolet Emission Lines of Si ii in Quasars: Investigating the "Si ii Disaster"

    NASA Astrophysics Data System (ADS)

    Laha, Sibasish; Keenan, Francis P.; Ferland, Gary J.; Ramsbottom, Catherine A.; Aggarwal, Kanti M.

    2016-07-01

    The observed line intensity ratios of the Si ii λ1263 and λ1307 multiplets to that of Si ii λ1814 in the broad-line region (BLR) of quasars are both an order of magnitude larger than the theoretical values. This was first pointed out by Baldwin et al., who termed it the “Si ii disaster,” and it has remained unresolved. We investigate the problem in the light of newly published atomic data for Si ii. Specifically, we perform BLR calculations using several different atomic data sets within the CLOUDY modeling code under optically thick quasar cloud conditions. In addition, we test for selective pumping by the source photons or intrinsic galactic reddening as possible causes for the discrepancy, and we also consider blending with other species. However, we find that none of the options investigated resolve the Si ii disaster, with the potential exception of microturbulent velocity broadening and line blending. We find that a larger microturbulent velocity (˜ 500 {km} {{{s}}}-1) may solve the Si ii disaster through continuum pumping and other effects. The CLOUDY models indicate strong blending of the Si ii λ1307 multiplet with emission lines of O i, although the predicted degree of blending is incompatible with the observed λ1263/λ1307 intensity ratios. Clearly, more work is required on the quasar modeling of not just the Si ii lines but also nearby transitions (in particular those of O i) to fully investigate whether blending may be responsible for the Si ii disaster.

  16. Nanoscale PtSi Tips for Conducting Probe Technologies

    NASA Astrophysics Data System (ADS)

    Bhaskaran, Harish; Sebastian, Abu; Despont, Michel

    2009-01-01

    A method to improve the conduction and wear properties of nanometric conducting tips by forming silicides of Pt at the tip apex is presented. Tips with PtSi apexes are fabricated in conjunction with standard Si tips. Wear measurements are carried out on both tip types of similar geometries, and a one-on-one comparison between Si and PtSi at the nanoscale is shown for the first time. Both the wear properties on tetrahedral amorphous carbon and the conduction on Au of the PtSi tip apexes are shown to be superior to the Si tips.

  17. Formation and ferromagnetic properties of FeSi thin films

    SciTech Connect

    Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae

    2013-05-07

    In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

  18. Subsurface Growth of CoSi2 by Deposition of Co on Si-Capped CoSi2 Seed Regions

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Pike, W. T.

    1991-01-01

    At a growth temperature of 800 C, Co deposited on Si(111) diffuses through a Si cap and exhibits oriented growth on buried CoSi2 grains, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 provided the thickness of the Si cap is less than a critical value between 100 and 200 nm for a deposition rate of 0.01 nm/s. Steady-state endotaxy is modeled under the assumption that the process is controlled by Co diffusion.

  19. Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

    NASA Technical Reports Server (NTRS)

    Grunthaner, P. J.; Grunthaner, F. J.; Madhukar, A.

    1982-01-01

    Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

  20. Electron beam-physical vapor deposition of SiC/SiO 2 high emissivity thin film

    NASA Astrophysics Data System (ADS)

    Yi, Jian; He, XiaoDong; Sun, Yue; Li, Yao

    2007-02-01

    When heated by high-energy electron beam (EB), SiC can decompose into C and Si vapor. Subsequently, Si vapor reacts with metal oxide thin film on substrate surface and formats dense SiO 2 thin film at high substrate temperature. By means of the two reactions, SiC/SiO 2 composite thin film was prepared on the pre-oxidized 316 stainless steel (SS) substrate by electron beam-physical vapor deposition (EB-PVD) only using β-SiC target at 1000 °C. The thin film was examined by energy dispersive spectroscopy (EDS), grazing incidence X-ray asymmetry diffraction (GIAXD), scanning electron microscopy (SEM), atomic force microscopy (AFM), backscattered electron image (BSE), electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Fourier transformed infra-red (FT-IR) spectroscopy. The analysis results show that the thin film is mainly composed of imperfect nano-crystalline phases of 3C-SiC and SiO 2, especially, SiO 2 phase is nearly amorphous. Moreover, the smooth and dense thin film surface consists of nano-sized particles, and the interface between SiC/SiO 2 composite thin film and SS substrate is perfect. At last, the emissivity of SS substrate is improved by the SiC/SiO 2 composite thin film.

  1. Purity and radioactive decay behaviour of industrial 2D-reinforced SiC f/SiC composites

    NASA Astrophysics Data System (ADS)

    Scholz, H. W.; Zucchetti, M.; Casteleyn, K.; Adelhelm, C.

    1994-09-01

    Ceramic matrix composites based on SiC with continuous fibres (SiC f/SiC) are considered promising structural materials for future fusion devices. It was still to clarify, whether impurities in industrial SiC f/SiC could jeopardise radiological advantages. Experimental impurity analyses revealed a two-dimensionally reinforced SiC f/SiC with the matrix produced by CVI as very pure. Chemo-spectrometric methods were combined with radioactivation methods (CPAA, NAA). A quantification of the main constituents Si, C and O was added. Calculations with the FISPACT-2.4 code and EAF-2 library identified elements detrimental for different low-activation criteria. For the neutron exposure, EEF reactor-study first wall and blanket conditions were simulated. The calculated SiC f/ SiC included 48 trace elements. Even under conservative assumptions, all low-activation limits of European interest are fulfilled. Exclusively the hands-on recycling limit for the First Wall can intrinsically not be satisfied with SiC. The theoretical goal of a SiC f/SiC depleted of 28Si (isotopic tailoring) is critically discussed.

  2. Phase Equilibria of the Sn-Ni-Si Ternary System and Interfacial Reactions in Sn-(Cu)/Ni-Si Couples

    NASA Astrophysics Data System (ADS)

    Fang, Gu; Chen, Chih-chi

    2015-07-01

    Interfacial reactions in Sn/Ni-4.5 wt.%Si and Sn-Cu/Ni-4.5 wt.%Si couples at 250°C, and Sn-Ni-Si ternary phase equilibria at 250°C were investigated in this study. Ni-Si alloys, which are nonmagnetic, can be regarded as a diffusion barrier layer material in flip chip packaging. Solder/Ni-4.5 wt.%Si interfacial reactions are crucial to the reliability of soldered joints. Phase equilibria information is essential for development of solder/Ni-Si materials. No ternary compound is present in the Sn-Ni-Si ternary system at 250°C. Extended solubility of Si in the phases Ni3Sn2 and Ni3Sn is 3.8 and 6.1 at.%, respectively. As more Si dissolves in these phases their lattice constants decrease. No noticeable ternary solubility is observed for the other intermetallics. Interfacial reactions in solder/Ni-4.5 wt.%Si are similar to those for solder/Ni. Si does not alter the reaction phases. No Si solubility in the reaction phases was detected, although rates of growth of the reaction phases were reduced. Because the alloy Ni-4.5 wt.%Si reacts more slowly with solders than pure Ni, the Ni-4.5 wt.%Si alloy could be a potential new diffusion barrier layer material for flip chip packaging.

  3. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

    PubMed Central

    2014-01-01

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

  4. Valence x-ray-emission bands of a-Si:H/a-SiNx:H superlattices

    NASA Astrophysics Data System (ADS)

    Nithianandam, Jeyasingh; Schnatterly, Stephen E.

    1990-11-01

    Si L2,3 x-ray-emission spectra from amorphous superlattices made with a-Si:H and a-SiNx:H are presented and interpreted using a two-phase linear superposition model for the valence-band region. The average thickness of buried interfaces in these superlattices was found to be 1.8 Å and the interfaces were shown to be of silicon-nitride character. A direct measurement of the fluorescence yield ratio in the soft-x-ray spectral range for any two materials is also presented.

  5. Interface characteristics in Co2MnSi/Ag/Co2MnSi trilayer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Chen, Hong; Wang, Guangzhao; Yuan, Hongkuan

    2016-05-01

    Interface characteristics of Co2MnSi/Ag/Co2MnSi trilayer have been investigated by means of first-principles. The most likely interface is formed by connecting MnSi-termination to the bridge site between two Ag atoms. As annealed at high temperature, the formation of interface DO3 disorder is most energetically favorable. The spin polarization is reduced by both the interface itself and interface disorder due to the interface state occurs in the minority-spin gap. As a result, the magneto-resistance ratio has a sharp drop based on the estimation of a simplified modeling.

  6. Particle size reduction of Si3N4 with Si3N4 milling hardware

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.; Freedman, M. R.; Kiser, J. D.

    1986-01-01

    The grinding of Si3N4 powder using reaction bonded Si3N4 attrition, vibratory, and ball mills with Si3N4 media was examined. The rate of particle size reduction and the change in the chemical composition of the powder were determined in order to compare the grinding efficiency and the increase in impurity content resulting from mill and media wear for each technique. Attrition and vibratory milling exhibited rates of specific surface area increase that were approximately eight times that observed in ball milling. Vibratory milling introduced the greatest impurity pickup.

  7. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    SciTech Connect

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; Brau, J.E.; Frey, R.E.; Strom, D.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  8. Ballistic-carrier spectroscopy of the CoSi2/Si interface

    NASA Technical Reports Server (NTRS)

    Kaiser, W. J.; Hecht, M. H.; Fathauer, R. W.; Bell, L. D.; Lee, E. Y.; Davis, L. C.

    1991-01-01

    Ballistic-electron-emission microscopy and related ballistic-hole and carrier-scattering spectroscopies were used to investigate carrier transport in the epitaxial CoSi2/Si system. An unexpected degree of variation in interface transmission was observed despite the high crystal quality of the epitaxial silicide layer. Furthermore, clear evidence of the CoSi2 band structure was observed, which has a dramatic effect on interface transport. The major effect of the silicide band structure is to increase the interfacial barrier to electron transmission to a value in excess of the Schottky barrier height.

  9. Thermophysical and mechanical properties of SiC/SiC composites

    SciTech Connect

    Zinkle, S.J.; Snead, L.L.

    1998-09-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits.

  10. Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

    NASA Technical Reports Server (NTRS)

    Kim, Kun HO; Bai, G.; Nicolet, MARC-A.; Mahan, John E.; Geib, Kent M.

    1991-01-01

    The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

  11. 29Si NMR spin-echo decay in YbRh2Si2

    NASA Astrophysics Data System (ADS)

    Kambe, S.; Sakai, H.; Tokunaga, Y.; Hattori, T.; Lapertot, G.; Matsuda, T. D.; Knebel, G.; Flouquet, J.; Walstedt, R. E.

    2016-02-01

    29Si nuclear magnetic resonance (NMR) has been measured in a 29Si-enriched single crystal sample of YbRh2Si2. The spin-echo decay for applied field H ∥, ⊥ the c-axes has been measured at 100 K. A clear spin-echo decay oscillation is observed for both cases, possibly reflecting the Ruderman-Kittel (RK) interaction. Since the observed oscillation frequency depends on the direction of applied magnetic field, anisotropic RK coupling and pseudo-dipolar (PD) interactions may not be negligible in this compound. The origin of spin-echo decay oscillations is discussed.

  12. Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)

    SciTech Connect

    Grydlik, Martyna; Groiss, Heiko; Brehm, Moritz; Schaeffler, Friedrich; Boioli, Francesca; Montalenti, Francesco; Miglio, Leo; Gatti, Riccardo; Devincre, Benoit

    2012-07-02

    We show that suitable pit-patterning of a Si(001) substrate can strongly influence the nucleation and the propagation of dislocations during epitaxial deposition of Si-rich Si{sub 1-x}Ge{sub x} alloys, preferentially gettering misfit segments along pit rows. In particular, for a 250 nm layer deposited by molecular beam epitaxy at x{sub Ge} = 15%, extended film regions appear free of dislocations, by atomic force microscopy, as confirmed by transmission electron microscopy sampling. This result is quite general, as explained by dislocation dynamics simulations, which reveal the key role of the inhomogeneous distribution in stress produced by the pit-patterning.

  13. Si isotope systematics of meteorites and terrestrial peridotites: implications for Mg/Si fractionation in the solar nebula and for Si in the Earth's core

    NASA Astrophysics Data System (ADS)

    Fitoussi, Caroline; Bourdon, Bernard; Kleine, Thorsten; Oberli, Felix; Reynolds, Ben C.

    2009-09-01

    High precision Si isotope ratios have been measured for a series of meteorites and terrestrial samples using high-resolution multi-collector ICP-MS. Our results differ from those reported in an earlier study [Georg et al., 2007. Si in the Earth's core. Nature 447, 1102-1106] in two important aspects. First, our data set reveals systematic differences in δ30Si between different chondrite groups that are correlated with their Mg/Si elemental ratio. Second, in agreement with the previous study, δ30Si for the terrestrial samples are higher than values for chondrites, but the difference between the Bulk Silicate Earth (BSE) and the carbonaceous chondrites (Δ 30Si BSE - carbonaceous chondrites = 0.08 ± 0.04‰ (1 standard deviation)) is about a factor of 2 smaller than previously reported. The δ30Si versus Mg/Si trend defined by the chondrite groups can be explained by reaction of olivine with a SiO-rich vapor to form enstatite, starting from a carbonaceous chondrite composition. In contrast, the difference between the BSE and carbonaceous chondrites must reflect a different process, and can be explained by incorporation of Si into the Earth's core during metal-silicate equilibration in a deep magma ocean. The observed Si isotope fractionation is consistent with the temperatures and pressures of metal-silicate equilibration derived from siderophile element abundances in the Earth's mantle.

  14. Light induced degradation and structure of high efficiency a-Si:H, a-SiGe:H and a-SiC:H solar cells

    SciTech Connect

    Fortmann, C.M.; O'Dowd, J.; Newton, J.; Fischer, J.

    1987-06-25

    The electrical and optical properties of a-Si:H, a-SiGe:H and a-SiC:H films prepared by d.c. glow discharge method have been characterized. High performance p-i-n devices have also been prepared. The relative stability as well as initial properties of these materials was examined as a function of growth rate. Notable solar cells include efficiencies of 9.36% for a-Si:H deposited at 10Asec, 8.6% for a-SiGe:H and 7% for a-SiC:H. Cells employing I-layers of a-Si:H grown at rates greater than 10Asec were significantly less stable than standard material. Cells using I-layers of either a-SiGe:H or a-SiC:H were stable (compared to standard a-Si:H) when they were prepared at growth rates of less than 1.0Asec. An increase in the infrared absorption at 845 cm/sup -1/ was associated with an increase in the rate of light induced degradation. Absorption at 845 cm/sup -1/, is usually associated with the bending modes of (SiH/sub 2/)/sub n/ polymeric chains

  15. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Takabe, Ryota; Yachi, Suguru; Du, Weijie; Tsukahara, Daichi; Takeuchi, Hiroki; Toko, Kaoru; Suemasu, Takashi

    2016-08-01

    Fabrication of p-BaSi2(20nm)/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (da-Si) and varying air exposure durations (tair) prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η) reached approximately 4.7% regardless of tair (varying from 12-150 h) for solar cells with da-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing tair for those with da-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J0) and diode ideality factor decreased with tair, resulting in the enhancement of η. The effects of the variation of da-Si (0.7, 2, 3, and 5 nm) upon the solar cell performance were examined while keeping tair = 150 h. The η reached a maximum of 9.0% when da-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J0 exhibited a tendency to decrease as da-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2 solar cells.

  16. Synthesis of 3C-SiC nanocrystals at the SiO2/Si interface by CO2 thermal treatment.

    PubMed

    Deokar, G; D'Angelo, M; Cavellin, C Deville

    2011-10-01

    We report 3C-SiC nano-crystals synthesis by thermal annealing of SiO2/Si wafers in CO2 gas. The nano-crystals have been characterized using scanning electron microscopy and atomic force microscopy. These results are correlated with selective area electron diffraction paterns, and transmission electron microscopy observations that evidence the formation of cubic SiC nano-crystals epitaxied on Si. In our experimental conditions, the crystals size is in the range 10-60 nm, increasing with the treatment time, as the crystals density. Using isotopic labelled SiO2 associated with Nuclear Reaction Analysis (NRA) and Nuclear Narrow Resonance Profiling (NRP), oxygen exchanges between CO2 and SiO2 could be evidenced.

  17. Universal Converter Using SiC

    SciTech Connect

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  18. COMPUTING SI AND CCPP USING SPREADSHEET PROGRAMS

    EPA Science Inventory

    Lotus 1-2-3 worksheets for calculating the calcite saturation index (SI) and calcium carbonate precipitation potential of a water sample are described. A simplified worksheet illustrates the principles of the method, and a more complex worksheet suitable for modeling most potabl...

  19. Porous Si structure as moisture sensor

    SciTech Connect

    Peterson, D.W.; Nguyen, L.T.

    1996-12-31

    Development and characterization of a capacitive moisture sensor made from porous Si is presented. The sensor development was in support of the DoD funded Plastic Package Availability program and was intended for the detection of pinholes and defects in moisture barrier coatings applied to ICs during fabrication or during the plastic encapsulation assembly process.

  20. Si/Cu Interface Structure and Adhesion

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John

    2006-03-01

    An ab initio investigation of the Si(111)/Cu(111) interfacial atomic structure and adhesion is reported [1]. Misfit dislocations appear naturally, as do hcp interfacial silicide phases that vary with temperature. The silicides form in the interface even at relatively low temperatures. These results are consistent with available experimental data. [1] Xiao-Gang Wang, John Smith, Physical Review Letters 95, 156102 (2005).

  1. Si-nanocrystal-based nanofluids for nanothermometry

    NASA Astrophysics Data System (ADS)

    Cardona-Castro, M. A.; Morales-Sánchez, A.; Licea-Jiménez, L.; Alvarez-Quintana, J.

    2016-06-01

    The measurement of local temperature in nanoscale volumes is becoming a technological frontier. Photoluminescent nanoparticles and nanocolloids are the natural choice for nanoscale temperature probes. However, the influence of a surrounding liquid on the cryogenic behavior of oxidized Si-nanocrystals (Si-NCs) has never been investigated. In this work, the photoluminescence (PL) of oxidized Si-NCs/alcohol based nanocolloids is measured as a function of the temperature and the molecule length of monohydric alcohols above their melting–freezing point. The results unveil a progressive blue shift on the emission peak which is dependent on the temperature as well as the dielectric properties of the surrounding liquid. Such an effect is analyzed in terms of thermal changes of the Si-NCs bandgap, quantum confinement and the polarization effects of the embedding medium; revealing an important role of the dielectric constant of the surrounding liquid. These results are relevant because they offer a general insight to the fundamental behavior of photoluminescent nanocolloids under a cooling process and moreover, enabling PL tuning based on the dielectric properties of the surrounding liquid. Hence, the variables required to engineer PL of nanofluids are properly identified for use as temperature sensors at the nanoscale.

  2. Passive SiC irradiation temperature monitor

    SciTech Connect

    Youngblood, G.E.

    1996-04-01

    A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

  3. The Stellar Imager (SI)"Vision Mission"

    NASA Technical Reports Server (NTRS)

    Carpenter, Ken; Danchi, W.; Leitner, J.; Liu, A.; Lyon, R.; Mazzuca, L.; Moe, R.; Chenette, D.; Karovska, M.; Allen, R.

    2004-01-01

    The Stellar Imager (SI) is a "Vision" mission in the Sun-Earth Connection (SEC) Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar magnetic activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, at ultraviolet wavelengths, on the order of 100 micro-arcsec and thus baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (less than 20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. SI's resolution will make it an invaluable resource for many other areas of astrophysics, including studies of AGN s, supernovae, cataclysmic variables, young stellar objects, QSO's, and stellar black holes. ongoing mission concept and technology development studies for SI. These studies are designed to refine the mission requirements for the science goals, define a Design Reference Mission, perform trade studies of selected major technical and architectural issues, improve the existing technology roadmap, and explore the details of deployment and operations, as well as the possible roles of astronauts and/or robots in construction and servicing of the facility.

  4. Bioengineered Nanoparticles for siRNA delivery

    PubMed Central

    Kozielski, Kristen L.; Tzeng, Stephany Y.; Green, Jordan J.

    2014-01-01

    Short interfering RNA (siRNA) has been an important laboratory tool in the last two decades and has allowed researchers to better understand the functions of non-protein-coding genes through RNA interference (RNAi). Although RNAi holds great promise for this purpose as well as for treatment of many diseases, efforts at using siRNA have been hampered by the difficulty of safely and effectively introducing it into cells of interest, both in vitro and in vivo. To overcome this challenge, many biomaterials and nanoparticles (NPs) have been developed and optimized for siRNA delivery, often taking cues from the DNA delivery field, although different barriers exist for these two types of molecules. In this review, we discuss general properties of biomaterials and nanoparticles that are necessary for effective nucleic acid delivery. We also discuss specific examples of bioengineered materials, including lipid-based NPs, polymeric NPs, inorganic NPs, and RNA-based NPs, which clearly illustrate the problems and successes in siRNA delivery. PMID:23821336

  5. LaRC - SI Thermoplastic Hardware

    NASA Technical Reports Server (NTRS)

    1994-01-01

    LaRC - SI thermoplastic parts filled with polymide powder. These filled parts represent pieces which can serve as optical components, electronic mounting assembles and as mechanical parts. These parts have increased hardness, lower thermal coefficient of expansion and higher softening parts than pure LaRC resin.

  6. LaRC - SI Thermoplastic Hardware

    NASA Technical Reports Server (NTRS)

    1994-01-01

    LaRC - SI thermoplastic molded mechanical parts. These parts are approximately 3 to 8 inches in length and width and range in thickness from 0.06 to 0.5 inches. These parts are extremely tough and have softening points between 240 - 250 degrees C.

  7. Si-nanocrystal-based nanofluids for nanothermometry

    NASA Astrophysics Data System (ADS)

    Cardona-Castro, M. A.; Morales-Sánchez, A.; Licea-Jiménez, L.; Alvarez-Quintana, J.

    2016-06-01

    The measurement of local temperature in nanoscale volumes is becoming a technological frontier. Photoluminescent nanoparticles and nanocolloids are the natural choice for nanoscale temperature probes. However, the influence of a surrounding liquid on the cryogenic behavior of oxidized Si-nanocrystals (Si-NCs) has never been investigated. In this work, the photoluminescence (PL) of oxidized Si-NCs/alcohol based nanocolloids is measured as a function of the temperature and the molecule length of monohydric alcohols above their melting-freezing point. The results unveil a progressive blue shift on the emission peak which is dependent on the temperature as well as the dielectric properties of the surrounding liquid. Such an effect is analyzed in terms of thermal changes of the Si-NCs bandgap, quantum confinement and the polarization effects of the embedding medium; revealing an important role of the dielectric constant of the surrounding liquid. These results are relevant because they offer a general insight to the fundamental behavior of photoluminescent nanocolloids under a cooling process and moreover, enabling PL tuning based on the dielectric properties of the surrounding liquid. Hence, the variables required to engineer PL of nanofluids are properly identified for use as temperature sensors at the nanoscale.

  8. Angular variation of oblique Hanle effect in CoFe/SiO2/Si and CoFe/Ta/SiO2/Si tunnel contacts

    NASA Astrophysics Data System (ADS)

    He, Shumin; Lee, Jeong-Hyeon; Grünberg, Peter; Cho, B. K.

    2016-03-01

    Oblique Hanle effect (OHE) with magnetic field applied at an oblique angle θ (0 ≤ θ ≤ 180°) was systematically investigated using the 3-terminal (3T) geometry with CoFe/SiO2/Si tunnel contacts. Clear Hanle-like signals with asymmetric voltage dependence are obtained for all angles. It is found that the asymptotic value of the OHE uniquely depends on the angle θ and its angular variation can be fitted well with both functions of cos2θ and /1 1 - α γ 2 cos 2 θ as predicted from spin injection and impurity-assisted magnetoresistance models, respectively. In addition, no Hanle signal is observed in tunnel junctions with spin-unpolarized CoFe/Ta/SiO2/Si structure, which is also understandable by both models. The experimental data in this study demonstrate clearly that further study should be still done to uncover the underlying physics of the Hanle-like signal in 3T tunnel contacts.

  9. Interface-mediated intervalley coupling in Si

    NASA Astrophysics Data System (ADS)

    Koiller, Belita; Saraiva, A. L.; Calderon, M. J.; Hu, Xuedong; Das Sarma, S.

    2011-03-01

    The conduction band degeneracy in Si is detrimental to spin qubits, for which a nondegenerate ground orbital state is desirable. The Si valley degeneracy is reduced to 2 near an interface with an insulator, and it may be lifted by the spatially abrupt change in the crystal potential. Basic physical mechanisms for Si/barrier mediated valley coupling in different situations are addressed here. Theoretical studies of the interface-induced valley splitting in Si are presented. Abrupt and smooth interface profiles are considered, and the full plane wave expansions of the Bloch functions at the conduction band minima are included. Simple criteria are suggested for optimal fabrication parameters affecting the valley splitting, emphasizing the relevance of different interface-related properties. Refs: A.L.Saraiva et al, PRB 80, 081305 R (2009); arXiv:1006.3338 Support: BK and ALS thank CNPq, FUJB, INCT on Quantum Information, and FAPERJ. M.J.C. acknowledges Ministerio de Ciencia e Innovación (Spain). XH amd SDS thank NSA and L PS. S.D.S. also thanks CMTC.

  10. Si-nanocrystal-based nanofluids for nanothermometry.

    PubMed

    Cardona-Castro, M A; Morales-Sánchez, A; Licea-Jiménez, L; Alvarez-Quintana, J

    2016-06-10

    The measurement of local temperature in nanoscale volumes is becoming a technological frontier. Photoluminescent nanoparticles and nanocolloids are the natural choice for nanoscale temperature probes. However, the influence of a surrounding liquid on the cryogenic behavior of oxidized Si-nanocrystals (Si-NCs) has never been investigated. In this work, the photoluminescence (PL) of oxidized Si-NCs/alcohol based nanocolloids is measured as a function of the temperature and the molecule length of monohydric alcohols above their melting-freezing point. The results unveil a progressive blue shift on the emission peak which is dependent on the temperature as well as the dielectric properties of the surrounding liquid. Such an effect is analyzed in terms of thermal changes of the Si-NCs bandgap, quantum confinement and the polarization effects of the embedding medium; revealing an important role of the dielectric constant of the surrounding liquid. These results are relevant because they offer a general insight to the fundamental behavior of photoluminescent nanocolloids under a cooling process and moreover, enabling PL tuning based on the dielectric properties of the surrounding liquid. Hence, the variables required to engineer PL of nanofluids are properly identified for use as temperature sensors at the nanoscale. PMID:27125568

  11. Characterization of ultrathin SiO x layers formed on a spatially controlled atomic-step-free Si(001) surface

    NASA Astrophysics Data System (ADS)

    Ando, Atsushi; Sakamoto, Kunihiro; Miki, Kazushi; Matsumoto, Kazuhiko; Sakamoto, Tsunenori

    1999-04-01

    We have demonstrated the characterizations of the morphologies and local electrical properties of ultrathin (<5 nm) SiO x/Si(001) structures that were formed by thermal oxidation of a spatially controlled atomic-step-free Si(001) surface. Both the SiO x surface and the SiO x/Si(001) interface had good morphology, with root-mean-square values of roughness, less than 0.12 nm. In contrast, spatial differences were observed in the local electrical properties measured using an atomic force microscope (AFM) with nanometer scale resolution.

  12. Comparison of Fatigue Life Between C/SiC and SiC/SiC Ceramic-Matrix Composites at Room and Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Longbiao, Li

    2016-04-01

    In this paper, the comparison of fatigue life between C/SiC and SiC/SiC ceramic-matrix composites (CMCs) at room and elevated temperatures has been investigated. An effective coefficient of the fiber volume fraction along the loading direction (ECFL) was introduced to describe the fiber architecture of preforms. Under cyclic fatigue loading, the fibers broken fraction was determined by combining the interface wear model and fibers statistical failure model at room temperature, and interface/fibers oxidation model, interface wear model and fibers statistical failure model at elevated temperatures in the oxidative environments. When the broken fibers fraction approaches to the critical value, the composites fatigue fracture. The fatigue life S-N curves and fatigue limits of cross-ply, 2D and 3D C/SiC and SiC/SiC composites at room temperature, 550 °C in air, 750 °C in dry and humid condition, 800 °C in air, 1000 °C in argon and air, 1100 °C, 1300 °C and 1500 °C in vacuum, have been predicted. At room temperature, the fatigue limit of 2D C/SiC composite with ECFL of 20 % lies between 0.78 and 0.8 tensile strength; and the fatigue limit of 2D SiC/SiC composite with ECFL of 20 % lies between 0.75 and 0.85 tensile strength. The fatigue limit of 2D C/SiC composite increases to 0.83 tensile strength with ECFL increasing from 20 to 22.5 %, and the fatigue limit of 3D C/SiC composite is 0.85 tensile strength with ECFL of 37 %. The fatigue performance of 2D SiC/SiC composite is better than that of 2D C/SiC composite at elevated temperatures in oxidative environment.

  13. Comparison of Fatigue Life Between C/SiC and SiC/SiC Ceramic-Matrix Composites at Room and Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Longbiao, Li

    2016-10-01

    In this paper, the comparison of fatigue life between C/SiC and SiC/SiC ceramic-matrix composites (CMCs) at room and elevated temperatures has been investigated. An effective coefficient of the fiber volume fraction along the loading direction (ECFL) was introduced to describe the fiber architecture of preforms. Under cyclic fatigue loading, the fibers broken fraction was determined by combining the interface wear model and fibers statistical failure model at room temperature, and interface/fibers oxidation model, interface wear model and fibers statistical failure model at elevated temperatures in the oxidative environments. When the broken fibers fraction approaches to the critical value, the composites fatigue fracture. The fatigue life S-N curves and fatigue limits of cross-ply, 2D and 3D C/SiC and SiC/SiC composites at room temperature, 550 °C in air, 750 °C in dry and humid condition, 800 °C in air, 1000 °C in argon and air, 1100 °C, 1300 °C and 1500 °C in vacuum, have been predicted. At room temperature, the fatigue limit of 2D C/SiC composite with ECFL of 20 % lies between 0.78 and 0.8 tensile strength; and the fatigue limit of 2D SiC/SiC composite with ECFL of 20 % lies between 0.75 and 0.85 tensile strength. The fatigue limit of 2D C/SiC composite increases to 0.83 tensile strength with ECFL increasing from 20 to 22.5 %, and the fatigue limit of 3D C/SiC composite is 0.85 tensile strength with ECFL of 37 %. The fatigue performance of 2D SiC/SiC composite is better than that of 2D C/SiC composite at elevated temperatures in oxidative environment.

  14. Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

    PubMed Central

    2014-01-01

    In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiO x matrix. For the case of the as-grown SiO x films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiO x /SiO y ) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiO x matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices. PACS 61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh PMID:25342935

  15. TDP2 promotes repair of topoisomerase I-mediated DNA damage in the absence of TDP1

    PubMed Central

    Zeng, Zhihong; Sharma, Abhishek; Ju, Limei; Murai, Junko; Umans, Lieve; Vermeire, Liesbeth; Pommier, Yves; Takeda, Shunichi; Huylebroeck, Danny; Caldecott, Keith W.; El-Khamisy, Sherif F.

    2012-01-01

    The abortive activity of topoisomerases can result in clastogenic and/or lethal DNA damage in which the topoisomerase is covalently linked to the 3′- or 5′-terminus of a DNA strand break. This type of DNA damage is implicated in chromosome translocations and neurological disease and underlies the clinical efficacy of an important class of anticancer topoisomerase ‘poisons’. Tyrosyl DNA phosphodiesterase-1 protects cells from abortive topoisomerase I (Top1) activity by hydrolyzing the 3′-phosphotyrosyl bond that links Top1 to a DNA strand break and is currently the only known human enzyme that displays this activity in cells. Recently, we identified a second tyrosyl DNA phosphodiesterase (TDP2; aka TTRAP/EAPII) that possesses weak 3′-tyrosyl DNA phosphodiesterase (3′-TDP) activity, in vitro. Herein, we have examined whether TDP2 contributes to the repair of Top1-mediated DNA breaks by deleting Tdp1 and Tdp2 separately and together in murine and avian cells. We show that while deletion of Tdp1 in wild-type DT40 cells and mouse embryonic fibroblasts decreases DNA strand break repair rates and cellular survival in response to Top1-induced DNA damage, deletion of Tdp2 does not. However, deletion of both Tdp1 and Tdp2 reduces rates of DNA strand break repair and cell survival below that observed in Tdp1−/− cells, suggesting that Tdp2 contributes to cellular 3′-TDP activity in the absence of Tdp1. Consistent with this idea, over-expression of human TDP2 in Tdp1−/−/Tdp2−/−/− DT40 cells increases DNA strand break repair rates and cell survival above that observed in Tdp1−/− DT40 cells, suggesting that Tdp2 over-expression can partially complement the defect imposed by loss of Tdp1. Finally, mice lacking both Tdp1 and Tdp2 exhibit greater sensitivity to Top1 poisons than do mice lacking Tdp1 alone, further suggesting that Tdp2 contributes to the repair of Top1-mediated DNA damage in the absence of Tdp1. In contrast, we failed to detect a contribution for Tdp1 to repair Top2-mediated damage. Together, our data suggest that Tdp1 and Tdp2 fulfil overlapping roles following Top1-induced DNA damage, but not following Top2-induced DNA damage, in vivo. PMID:22740648

  16. Modeling Creep Effects in Advanced SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Lang, Jerry; DiCarlo, James

    2006-01-01

    Because advanced SiC/SiC composites are projected to be used for aerospace components with large thermal gradients at high temperatures, efforts are on-going at NASA Glenn to develop approaches for modeling the anticipated creep behavior of these materials and its subsequent effects on such key composite properties as internal residual stress, proportional limit stress, ultimate tensile strength, and rupture life. Based primarily on in-plane creep data for 2D panels, this presentation describes initial modeling progress at applied composite stresses below matrix cracking for some high performance SiC/SiC composite systems recently developed at NASA. Studies are described to develop creep and rupture models using empirical, mechanical analog, and mechanistic approaches, and to implement them into finite element codes for improved component design and life modeling

  17. Interfacial Thickness Guidelines for SiC(Fiber)/SiC(Matrix) Composites

    NASA Technical Reports Server (NTRS)

    Hurst, Janet B.

    1998-01-01

    Researchers at the NASA Lewis Research Center have developed a guideline for the interface thickness necessary for SiC(Fiber)/SiC(Matrix) composites to demonstrate good composite properties. These composite materials have potential commercial applications for high-temperature structural components such as engine hot sections. Several samples of each were composed from three different small-diameter (less than 20 mm), polymer-derived SiC fibers that were woven into two-dimensional cloths and laid up as preforms. The preforms were treated with a chemical-vapor-infiltrated boron nitride layer as an interfacial coating on the fiber surfaces to provide the necessary debonding characteristics for successful composite behavior. Then, the preforms were filled with additional SiC as a matrix phase.

  18. An Insidious Mode of Oxidative Degradation in a SiC-SiC Composite

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.

    1997-01-01

    The oxidative durability of a SiC-SiC composite with Hi-Nicalon fiber and BN interphase was investigated at 800 C (where pesting is known to occur in SiC-SiC composites) for exposure durations of up to 500 hours and in a variety of oxidant mixes and flow rates, ranging from quasi-stagnant room air, through slow flowing O2 containing 30-90% H2O, to the high-velocity flame of a burner rig. Degradation of the composite was determined from residual strength and fracture strain in post-exposure mechanical tests and correlated with microstructural evidence of damage to fiber and interphase. The severest degradation of composite behavior was found to occur in the bumer rig, and is shown to be connected with the high oxidant velocity and substantial moisture content, as well as a thin sublayer of carbon indicated to form between fiber and interphase during composite processing.

  19. Crack initiation and growth characteristics in SiC/SiC under indentation test

    NASA Astrophysics Data System (ADS)

    Zhang, W.; Hinoki, T.; Katoh, Y.; Kohyama, A.; Noda, T.; Muroga, T.; Yu, J.

    1998-10-01

    The mechanical behavior of ceramic matrix composites (CMC) is known to be strongly influenced by fiber-matrix interfacial properties and there have been many efforts to clarify the interfacial characteristics. To understand the fracture mechanism of the materials it is necessary to clarify how the cracks initiate and propagate among fibers, interphase (coating) and matrix. The objective of this study is to investigate crack initiation and growth characteristics in SiC/SiC composites with variations in coating thickness and coating methods by means of micro-indentation technique. Micro-indentation tests and hardness tests were carried out on SiC/SiC composites produced by the chemical vapour infiltration (CVI) process. The intrinsic catastrophic mode of failure of the brittle composite was prevented by application of single carbon and multiple coatings on fibers. Thinner coatings are sensitive to make fibers debonded and may improve the toughness of the composites.

  20. Subeutectic Synthesis of Epitaxial Si-NWs with Diverse Catalysts Using a Novel Si Precursor

    PubMed Central

    2010-01-01

    The applicability of a novel silicon precursor with respect to reasonable nanowire (NW) growth rates, feasibility of epitaxial NW growth and versatility with respect to diverse catalysts was investigated. Epitaxial growth of Si-NWs was achieved using octochlorotrisilane (OCTS) as Si precursor and Au as catalyst. In contrast to the synthesis approach with SiCl4 as precursor, OCTS provides Si without the addition of H2. By optimizing the growth conditions, effective NW synthesis is shown for alternative catalysts, in particular, Cu, Ag, Ni, and Pt with the latter two being compatible to complementary metal-oxide-semiconductor technology. As for these catalysts, the growth temperatures are lower than the lowest liquid eutectic; we suggest that the catalyst particle is in the solid state during NW growth and that a solid-phase diffusion process, either in the bulk, on the surface, or both, must be responsible for NW nucleation. PMID:20843058

  1. Ni-Si Alloys for the S-I Reactor-Hydrogen Production Process Interface

    SciTech Connect

    Joseph W. Newkirk; Richard K. Brow

    2010-01-21

    The overall goal of this project was to develop Ni-Si alloys for use in vessels to contain hot, pressurized sulfuric acid. The application was to be in the decomposition loop of the thermochemical cycle for production of hydrogen.

  2. Heterojunction Internal Photoemission SiO.7GeO.3/Si Infrared Detector

    NASA Technical Reports Server (NTRS)

    Lin, True Lon

    1994-01-01

    Silicon-compatible detectors are amoung the most promising infrared sensors for large focal plane array applications due to their advantages of uniformity, reliability, and easy integration with low-noise Si readout circuitry.

  3. Excitation of Er{sup 3+} ions in SiO{sub 2} with Si nanocrystals

    SciTech Connect

    Prokofiev, A. A. Moskalenko, A. S.; Yassievich, I. N.

    2008-08-15

    Probabilities of excitation of erbium ions via Coulomb interaction with carriers localized in silicon nanocrystals embedded in SiO{sub 2}, in recombination and intraband relaxation of these carriers, have been calculated.

  4. Thermionic power generation at high temperatures using SiGe /Si superlattices

    NASA Astrophysics Data System (ADS)

    Vashaee, Daryoosh; Shakouri, Ali

    2007-03-01

    Recent studies have predicted that heterostructure superlattices can enhance the effective thermoelectric power factor significantly through selective emission of hot carriers via thermionic emission. Here, we study the potential of SiGe /Si superlattices for power generation at high temperatures. A detailed theory based on Boltzmann transport equation is developed which takes into account multiple valleys. We show that thermionic emission provides only a modest improvement in the power factor. This is due to the fact that SiGe is a multivalley semiconductor and it has a large density of states. With reasonable dopings, Fermi energy in SiGe alloy is very close to the band minimum so that the symmetry of the differential conductivity does not change very much with small barrier superlattices. Particularly at high temperatures when the thermal spread of the carriers is much larger than the Fermi energy in the band, superlattice energy filtering is not effective.

  5. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

  6. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.

  7. Photoluminescent Si/SiOx nanoparticle network by near atmospheric plasma-enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Yang, Q. Y.; Wang, D. X.; Guo, Y.; Ding, K.; Xu, J. Z.; Shi, J. J.; Zhang, J.

    2011-11-01

    A very fast and simple near atmospheric plasma-enhanced chemical vapour deposition method modulated by a pulsed negative bias voltage is newly developed to yield a Si/SiOx nanoparticle-linked network structure, which emitted enhanced 410 nm photoluminescence (PL) at room temperature. Hydrogen dissociation, oxidation and polarization of the silane plasma-generated active particles could be tuned by the magnitude of bias voltage. The porosity and oxidation of this network structure and the intensity of its PL spectrum at 410 nm were observed to increase with the bias voltage. The large surface area of the Si/SiOx nanoparticle-linked network intensified the radiative recombination centre effect and caused the PL emission enhancement.

  8. Architectural Effects on Impact Resistance of Uncoated MI SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Bhatt, R. T.; Cosgriff, L. M.; Fox, D. S.

    2009-01-01

    Impact tests were conducted on uncoated 2D and 2.5D MI SiC/SiC composite specimens at room temperature and 1316 C in air. The specimens were analyzed before and after impact using optical microscopy, pulsed thermography (PT) and computed tomography (CT). Preliminary results indicate the following. Both 2-D and 2.5D composites show increase in surface and volumetric damages with increasing impact velocity. However, 2-D composites are prone to delamination cracks. In both 2D and 2.5D composites, the magnitude of impact damage at a fixed impact velocity is slightly greater at room temperature than at 1315 C. At a fixed projectile velocity and test temperature, the depth of penetration of the projectile into the substrate is significantly lower in 2.5D composites than in 2D composites. Fiber architecture plays a significant role controlling impact damage in MI SiC/SiC composites.

  9. Current status and recent research achievements in SiC/SiC composites

    NASA Astrophysics Data System (ADS)

    Katoh, Y.; Snead, L. L.; Henager, C. H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S. M.

    2014-12-01

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  10. Tensile creep and creep fracture of a fiber-reinforced SiC/SiC composite

    SciTech Connect

    Wilshire, B.; Carreno, F.; Percival, M.J.L.

    1998-08-11

    Several studies have been completed on silicon carbide fiber-reinforced silicon carbide (SiC{sub f}/SiC) composites produced with carbon-coated fibres having a 0/90{degree} architecture. Yet, while mechanical property measurements have been made at temperatures up to 1,473K in air and argon high-temperature creep tests have been carried out only under protective atmospheres. To clarify the creep behavior patterns displayed by continuous-fiber-reinforced CMCs, while simultaneously providing information relevant to aeroengine turbine design, the tensile creep and creep fracture properties of a 0/90{degree} SiC{sub f}/SiC composite have been determined over a stress range giving creep rupture lives up to approximately 2,000 hours in air at 1,573K.

  11. Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron

    SciTech Connect

    Bagaev, V. S.; Nikolaev, S. N.; Onishchenko, E. E.; Pruchkina, A. A.; Krivobok, V. S.; Novikov, A. V.

    2015-05-14

    Low-temperature photoluminescence of undoped and moderately δ-doped Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells has been studied. The influence of boron δ-layer on the excitonic luminescence and the luminescence caused by a dense electron plasma was demonstrated. The conditions under which the luminescence spectra of quantum wells are dominated by impurity-bound excitons (BE) have been established. Some unusual properties of these BE are explained in terms of type II band-offset in Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells, which favors a spatial separation of electrons and holes. It is shown that the temperature dependence of an excitonic emission in the quantum wells allows to calculate the BE-related density of states and, thus, can be used for contactless estimation of the impurity concentration in quantum wells.

  12. Current Status and Recent Research Achievements in SiC/SiC Composites

    SciTech Connect

    Katoh, Yutai; Snead, Lance L.; Henager, Charles H.; Nozawa, T.; Hinoki, Tetsuya; Ivekovic, Aljaz; Novak, Sasa; Gonzalez de Vicente, Sehila M.

    2014-12-01

    The development and maturation of the silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen the evolution from fundamental development and understanding of the material system and its behavior in a hostile irradiation environment to the current effort which essentially is a broad-based program of technology, directed at moving this material class from a laboratory curiosity to an engineering material. This paper lays out the recent international scientific and technological achievements in the development of SiC/SiC composite material technologies for fusion application and will discuss future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and for general engineering applications.

  13. SiC/SiC Composites for 1200 C and Above

    NASA Technical Reports Server (NTRS)

    DiCarlo, J. A.; Yun, H.-M.; Morscher, G. N.; Bhatt, R. T.

    2004-01-01

    The successful replacement of metal alloys by ceramic matrix composites (CMC) in high-temperature engine components will require the development of constituent materials and processes that can provide CMC systems with enhanced thermal capability along with the key thermostructural properties required for long-term component service. This chapter presents information concerning processes and properties for five silicon carbide (SiC) fiber-reinforced SiC matrix composite systems recently developed by NASA that can operate under mechanical loading and oxidizing conditions for hundreds of hours at 1204, 1315, and 1427 C, temperatures well above current metal capability. This advanced capability stems in large part from specific NASA-developed processes that significantly improve the creep-rupture and environmental resistance of the SiC fiber as well as the thermal conductivity, creep resistance, and intrinsic thermal stability of the SiC matrices.

  14. Hoop Tensile Characterization Of SiC/SiC Cylinders Fabricated From 2D Fabric

    NASA Technical Reports Server (NTRS)

    Verrilli, Michael J.; Yun, HeeMann; DiCarlo, James A.; Barnett, Terry R.

    2002-01-01

    Tensile stress-strain properties in the hoop direction were obtained for 100-mm diameter SiC/SiC cylinders using ring specimens machined from the cylinder ends. The cylinders were fabricated from 2D balanced fabric with several material variants, including wall thickness (6, 8, and 12 plies), Sic fiber type (Sylramic, Sylramic-iBN, Hi-Nicalon, and Hi-Nicalon S), fiber sizing type, and matrix type (full CVI Sic, and partial CVI plus melt-infiltrated SiC-Si). Fiber ply splices existed in the all the hoops. Tensile hoop measurements were made at room temperature and 1200 C using hydrostatic ring test facilities. The hoop results are compared with in-plane data measured on flat panels using same material variants, but containing no splices.

  15. Incubation time for sub-critical crack propagation in SiC-SiC composites

    SciTech Connect

    El-Azab, A.; Ghoniem, N.M.

    1995-04-01

    The objective of this work is to investigate the time for sub-critical crack propagation is SiC-SiC composites at high temperatures. The effects of fiber thermal creep on the relaxation of crack bridging tractions in SiC-SiC ceramic matrix composites (CMCs) is considered in the present work, with the objective of studying the time-to propagation of sub-critical matrix cracks in this material at high temperatures. Under the condition of fiber stress relaxation in the bridiging zone, it is found that the crack opening and the stress intensity factor increase with time for sub-critical matrix cracks. The time elapsed before the stress intensity reaches the critical value for crack propagation is calculated as a function of the initial crack length, applied stress and temperature. Stability domains for matrix cracks are defined, which provide guidelines for conducting high-temperature crack propagation experiments.

  16. Thermal Diffusivity Measurement for p-Si and Ag/p-Si by Photoacoustic Technique

    NASA Astrophysics Data System (ADS)

    Hussein, Mohammed Jabbar; Yunus, W. Mahmood Mat; Kamari, Halimah Mohamed; Zakaria, Azmi

    2015-10-01

    Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using open photoacoustic cell (OPC). The samples were annealed by heating them at 960, 1050, 1200, and 1300 °C for 3 h in air. The thermal diffusivity of Ag-coated samples was obtained by fitting the photoacoustic experimental data to the thermally thick equation for Rosencwaig and Gersho (RG) theory. For the single layer samples, the thermal diffusivity can be obtained by fitting as well as by obtaining the critical frequency f c . In this study, the thermal diffusivity of the p-Si samples increased with increasing the annealing temperature. The thermal diffusivity of the Ag/p-Si samples, after reaching the maximum value of about 2.73 cm2/s at a temperature of 1200 °C, decreased due to the silver complete melt in the surface of the silicon.

  17. Simultaneous Determination of Si and Mg Isotopic Composition in Meteorites

    NASA Astrophysics Data System (ADS)

    Sikdar, J.; Rai, V. K.

    2016-08-01

    This paper utilizes simultaneous Si and Mg isotopic analyses of different classes of bulk meteorites including CC, OC, EC and HED with aim to understand the cause of enrichment of heavy Si in Bulk Silicate Earth relative to chondrites.

  18. Advanced Si IR detectors using molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Jones, E. W.; George, T.; Ksendzov, A.; Huberman, M. L.

    1991-01-01

    SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

  19. Implementation of SI Units in Chemical Engineering Education

    ERIC Educational Resources Information Center

    Youngquist, Gordon R.

    1976-01-01

    Discusses the results of a survey of U.S. Chemical Engineering Departments to determine established policy concerning the use of SI units in courses and plans for future implementation of the SI system of units. (MLH)

  20. Metal-semiconductor interfacial reactions - Ni/Si system

    NASA Technical Reports Server (NTRS)

    Cheung, N. W.; Grunthaner, P. J.; Grunthaner, F. J.; Mayer, J. W.; Ullrich, B. M.

    1981-01-01

    X-ray photoelectron spectroscopy and channeling measurements with MeV He-4(+) ions have been used to probe the structure of the interface in the Ni/Si system. It is found that reactions occur where Ni is deposited on Si at 10 to the -10th torr: Si atoms are displaced from lattice sites, the Ni atoms are in an Si-rich environment, and the Ni/Si interface is graded in composition. Composition gradients are present at both interfaces in the Si/Ni2/Si/Ni system. For the Ni-Si system, cooling the substrate to 100 K slows down the reaction rate. The temperature dependence of the interfacial reactivity indicates the kinetic nature of metal-semiconductor interfaces.

  1. Trace elements distribution in Cu-Si alloys

    NASA Astrophysics Data System (ADS)

    Mitrašinović, Aleksandar M.; Utigard, Torstein A.

    2011-10-01

    The trace elements distribution in Cu-Si alloys is analyzed after mixing Si with Cu. The mass balance and atomic distribution showed that the highest concentration of trace elements was at the phase boundaries between Si and Cu-Si intermetallic. The concentrations of 21 trace elements in the refined Si were below detection limit of the ICP technique where 11 elements were below 1ppm at and another 7 elements were below 2ppm at. The amount of other elements decreased several times in the refined Si, compared to that in initial metallurgical grade silicon. The level of trace elements in refined Si allows utilization of the Si photo-catalytic characteristics for solar energy generation.

  2. Photoluminescence from stain-etched polycrystalline Si thin films

    NASA Astrophysics Data System (ADS)

    Steckl, A. J.; Xu, J.; Mogul, H. C.

    1993-04-01

    Visible room-temperature photoluminescence has been observed from stain-etched polycrystalline Si thin films. Poly-Si thin films deposited on oxidized Si and quartz substrates became porous (PoSi) after stain-etching in a 1:3:5 solution of HF:HNO3:H2O. Under UV excitation, the stain-etched doped and undoped poly-Si films produce uniform orange-red (about 650 nm) luminescence very similar to that obtained from stain-etched crystalline Si substrates. Stained amorphous thin films did not exhibit photoluminescence. Luminescent patterns with sub-micrometer (about 0.6 micron) dimensions have been obtained for the first time from PoSi produced from poly-Si films.

  3. Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

    NASA Astrophysics Data System (ADS)

    Tsybeskov, L.; Mala, S. A.; Wang, X.; Baribeau, J.-M.; Wu, X.; Lockwood, D. J.

    2016-11-01

    We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.

  4. Thermo-mechanical analysis of LWR SiC/SiC composite cladding

    NASA Astrophysics Data System (ADS)

    Ben-Belgacem, M.; Richet, V.; Terrani, K. A.; Katoh, Y.; Snead, L. L.

    2014-04-01

    A dedicated framework for thermo-mechanical analysis of the in-pile performance of SiC/SiC composite fuel cladding concepts in LWRs has been developed. This analysis framework focuses on cladding and omits any fuel-cladding interaction and fuel behavior. Since radial expansion of the cladding occurs early in life for these ceramic structures, fuel-cladding contact is expected to be delayed or eliminated and therefore it is not considered in this analysis. The analysis inputs recent out-of-pile and in-pile materials property data and phenomenological understanding of material evolution under neutron irradiation for nuclear-grade SiC/SiC composites to provide a best-estimate analysis. The analysis provides insight into the concept design and feasibility of SiC/SiC composite cladding concepts that exhibit significantly different behavior than metallic cladding structures. In particular, absence of any tangible creep (thermal or irradiation) coupled with a large and temperature-gradient-driven irradiation swelling strain gradient across the cladding, drive development of large stresses across the cladding thickness. The resulting analysis indicates that significant stresses develop after a modest neutron dose (∼1 dpa) and a pronounced variation across the cladding thickness exists and is opposite to that observed for metallic cladding structures where swelling or growth strains are either negligible (with small temperature dependence) or absent. Following this thermo-mechanical analysis, a best-estimate and parametric examination of SiC/SiC fuel rod cladding structures has been performed using appropriate Weibull statistics to prescribe basic design guidelines and to begin to define a probable design space.

  5. Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor); Grunthaner, Paula J. (Inventor)

    1991-01-01

    Pinhole-free epitaxial CoSi.sub.2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500.degree. to 750.degree. C.

  6. SEGR in SiO$${}_2$$ –Si$_3$ N$_4$ Stacks

    DOE PAGESBeta

    Javanainen, Arto; Ferlet-Cavrois, Veronique; Bosser, Alexandre; Jaatinen, Jukka; Kettunen, Heikki; Muschitiello, Michele; Pintacuda, Francesco; Rossi, Mikko; Schwank, James R.; Shaneyfelt, Marty R.; et al

    2014-04-17

    This work presents experimental SEGR data for MOS-devices, where the gate dielectrics are are made of stacked SiO2–Si3N4 structures. Also a semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is proposed. Then statistical interrelationship between SEGR cross-section data and simulated energy deposition probabilities in thin dielectric layers is discussed.

  7. Design of a creep experiment for SiC/SiC composites in HFIR

    SciTech Connect

    Hecht, S.L.; Hamilton, M.L.; Jones, R.H.

    1997-08-01

    A new specimen was designed for performing in-reactor creep tests on composite materials, specifically on SiC/SiC composites. The design was tailored for irradiation at 800{degrees}C in a HFIR RB position. The specimen comprises a composite cylinder loaded by a pressurized internal bladder that is made of Nb1Zr. The experiment was designed for approximately a one year irradiation.

  8. Electronic structure of Fe{sub 3}Si on Si(100) substrates

    SciTech Connect

    Lal, Chhagan; Di Santo, G.; Caputo, M.; Panighel, M.; Goldoni, A.; Taleatu, B. A.; Jain, I. P.

    2014-04-24

    The improved performance of large-scale integrated circuits (LSIs) by the shrinking of devices is becoming difficult due to physical limitations. Here we report, the growth and formation of Fe{sub 3}Si on Si(100) and characterized by x-ray photoemission, UV photoemission and low energy electron diffraction to study the electronic structure. The results revealed that the DO{sub 3} phase formation is exist and photoemission results also support the electron diffraction outcome.

  9. Mechanical behavior of polycrystalline ceramics: Brittle fracture of SiC-Si3N4 materials

    NASA Technical Reports Server (NTRS)

    Ceipold, M. H.; Kapadia, C. M.; Kelkar, A. H.

    1972-01-01

    Research on the fracture behavior of silicon nitride and silicon carbide is reported along with the role of anion impurities in the fabrication and behavior of magnesium oxide. The results of a survey of crack propagation in SiC and Si3N4 are presented. Studies in the following areas are reported: development of a fracture toughness testing technique, constant moment beam, microcrack examination, and etching techniques.

  10. Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

    PubMed Central

    Wang, Li; Walker, Glenn; Chai, Jessica; Iacopi, Alan; Fernandes, Alanna; Dimitrijev, Sima

    2015-01-01

    A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the “melt-back” effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engineered to obtain high quality, low roughness 3C-SiC/Si templates suitable for subsequent GaN growth and device processing. Kinetic surface roughening and SiC growth mechanisms, which depend on both deposition temperature and off-cut angle, are reported for heteroepitaxial growth of 3C-SiC on Si substrates. The narrower terrace width on 4° off-axis Si enhances the step-flow growth at 1200 °C, with the roughness of 3C-SiC remaining constant with increasing thickness, corresponding to a scaling exponent of zero. Crack-free 3C-SiC grown on 150-mm Si substrate with a wafer bow of less than 20 μm was achieved. Both concave and convex wafer bow can be obtained by in situ tuning of the deposited SiC layer thicknesses. The 3C-SiC grown on off-axis Si, compared to that grown on on-axis Si, has lower surface roughness, better crystallinity, and smaller bow magnitude. PMID:26487465

  11. Enhanced and Retarded SiO2 Growth on Thermally Oxidized Fe-Contaminated n-Type Si(001) Surfaces

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Hagiwara, Hiroyuki

    2013-04-01

    At the beginning of the oxidation of Fe-contaminated n-type Si(001) surfaces, Fe reacted with oxygen (O2) on the silicon (Si) substrate to form Fe2O3 and oxygen-induced point defects (emitted Si + vacancies). SiO2 growth was mainly enhanced by catalytic action of Fe. At 650 °C, SiO2 growth of the contaminated samples was faster than in reference samples rinsed in RCA solution during the first 60 min. However, it substantially slowed and became less than that of the reference samples. As the oxidation advanced, approximately half of the contaminated Fe atoms became concentrated close to the surface area of the SiO2 film layer. This Fe2O3-rich SiO2 layer acted as a diffusion barrier against oxygen species. The diffusion of oxygen atoms toward the SiO2/Si interface may have been reduced, and in turn, the emission of Si self-interstitials owing to oxidation-induced strain may have been decreased at the SiO2/Si interface, resulting in the retarded oxide growth. These results are evidence that emitted Si self-interstitials are oxidized not in the Fe2O3-rich SiO2 layer, but at the SiO2/Si interface in accordance with a previously proposed model. A possible mechanism based on the interfacial Si emission model is discussed. The activation energies for the oxide growth are found to be in accord with the enhanced and reduced growths of the Fe-contaminated samples.

  12. Oxidation of TaSi2-Containing ZrB2-SiC Ultra-High Temperature Materials

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Smith, Jim; Levine, Stanley R.; Lorincz, Jonathan; Reigel, Marissa

    2010-01-01

    Hot pressed coupons of composition ZrB2-20 v% SiC-5 v% TaSi2 and ZrB2-20 v% SiC-20 v% TaSi2 were oxidized in stagnant air at temperatures of 1627 and 1927C for one, five and ten 10-minute cycles. The oxidation reactions were characterized by weight change kinetics, x-ray diffraction, and SEM/EDS. Detailed WDS/microprobe quantitative analyses of the oxidation products were conducted for the ZrB2-20 v% SiC-20 v% TaSi2 sample oxidized for five 10-minute cycles at 1927C. Oxidation kinetics and product formation were compared to ZrB2-20 v% SiC with no TaSi2 additions. It was found that the 20 v% TaSi2 composition exhibited improved oxidation resistance relative to the material with no TaSi2 additions at 1627C. However, for exposures at 1927C less oxidation resistance and extensive liquid phase formation were observed compared to the material with no TaSi2 additions. Attempts to limit the liquid phase formation by reducing the TaSi2 content to 5 v% were unsuccessful. In addition, the enhanced oxidation resistance at 1627C due to 20 v% TaSi2 additions was not achieved at the 5 v% addition level. The observed oxidation product evolution is discussed in terms of thermodynamics and phase equilibria for the TaSi2-containing ZrB2-SiC material system. TaSi2-additions to ZrB2-SiC at any level are not recommended for ultra-high temperature (>1900C) applications due to excessive liquid phase formation.

  13. Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates.

    PubMed

    Wang, Li; Walker, Glenn; Chai, Jessica; Iacopi, Alan; Fernandes, Alanna; Dimitrijev, Sima

    2015-10-21

    A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the "melt-back" effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engineered to obtain high quality, low roughness 3C-SiC/Si templates suitable for subsequent GaN growth and device processing. Kinetic surface roughening and SiC growth mechanisms, which depend on both deposition temperature and off-cut angle, are reported for heteroepitaxial growth of 3C-SiC on Si substrates. The narrower terrace width on 4° off-axis Si enhances the step-flow growth at 1200 °C, with the roughness of 3C-SiC remaining constant with increasing thickness, corresponding to a scaling exponent of zero. Crack-free 3C-SiC grown on 150-mm Si substrate with a wafer bow of less than 20 μm was achieved. Both concave and convex wafer bow can be obtained by in situ tuning of the deposited SiC layer thicknesses. The 3C-SiC grown on off-axis Si, compared to that grown on on-axis Si, has lower surface roughness, better crystallinity, and smaller bow magnitude.

  14. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Ksendzov, A.; Dejewski, Suzan M.; Jones, Eric W.; Fathauer, Robert W.; Krabach, Timothy N.; Maserjian, Joseph

    1991-01-01

    A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

  15. Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment

    NASA Astrophysics Data System (ADS)

    Liang, J.; Nishida, S.; Arai, M.; Shigekawa, N.

    2016-07-01

    The effects of annealing process on the electrical properties of n+-Si/n-SiC and p+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring the current-voltage (I-V) characteristics of n+-Si/n-SiC junctions that the reverse-bias current and the ideality factor decreased to 2.0 × 10-5 mA/cm2 and 1.10, respectively, after the junctions annealing at 700 °C. The flat band voltages of n+-Si/n-SiC and p+-Si/n-SiC junctions obtained from capacitance-voltage (C-V) measurements decreased with increasing annealing temperature. Furthermore, their flat band voltages are very close to each other irrespective of the annealing temperature change, which suggests that the Fermi level is still pinned at the bonding interface even for the junctions annealing at high temperature and the interface state density causing Fermi level pinning varies with the junctions annealing. The reverse characteristics of n+-Si/n-SiC junctions are in good agreement with the calculations based on thermionic field emission. In addition, the calculated donor concentration of 4H-SiC epi-layers and flat band voltage is consistent with the values obtained from C-V measurements.

  16. Investigation on the Electrical Properties of Vacuum Cold Sprayed SiC-MoSi2 Coatings at Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Wang, Y.-Y.; Liu, Y.; Li, C.-J.; Yang, G.-J.; Feng, J.-J.; Kusumoto, K.

    2011-06-01

    SiC-MoSi2 composite powders was prepared by wet milling with MoSi2 powders and SiC loose grinding ball in alcohol solution. Vacuum cold spray (VCS) process was used to deposit SiC-MoSi2 electric conducting composite coatings. The microstructure of the VCS SiC-MoSi2 composite coatings were characterized by scanning electron microscopy. The electrical resistance of the coatings was measured using a four-point probe method. The effects of the deposition parameters on the electrical resistivity of the composite coatings were investigated. The electrical properties of the coatings at elevated temperatures in air and Ar gas atmospheres were also explored. The results show that the electrical resistivity of SiC-MoSi2 coatings decreases with increasing He gas flow rates ranged from 3 to 6 L/min. The electrical resistivity increases with the increase in heat treatment temperature due to "pesting" behavior of MoSi2. The electric conductive property of the VCS SiC-MoSi2 coating is significantly improved after heat treatment at 1000 °C for 3 h in Ar protective atmosphere without oxidation. A minimum resistivity of the heat treated coating is 0.16 Ω · cm.

  17. Fiber/Matrix Interfacial Thermal Conductance Effect on the Thermal Conductivity of SiC/SiC Composites

    SciTech Connect

    Nguyen, Ba Nghiep; Henager, Charles H.

    2013-04-20

    SiC/SiC composites used in fusion reactor applications are subjected to high heat fluxes and require knowledge and tailoring of their in-service thermal conductivity. Accurately predicting the thermal conductivity of SiC/SiC composites as a function of temperature will guide the design of these materials for their intended use, which will eventually include the effects of 14-MeV neutron irradiations. This paper applies an Eshelby-Mori-Tanaka approach (EMTA) to compute the thermal conductivity of unirradiated SiC/SiC composites. The homogenization procedure includes three steps. In the first step EMTA computes the homogenized thermal conductivity of the unidirectional (UD) SiC fiber embraced by its coating layer. The second step computes the thermal conductivity of the UD composite formed by the equivalent SiC fibers embedded in a SiC matrix, and finally the thermal conductivity of the as-formed SiC/SiC composite is obtained by averaging the solution for the UD composite over all possible fiber orientations using the second-order fiber orientation tensor. The EMTA predictions for the transverse thermal conductivity of several types of SiC/SiC composites with different fiber types and interfaces are compared to the predicted and experimental results by Youngblood et al.

  18. Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

    NASA Astrophysics Data System (ADS)

    Mooney, P. M.; Jiang, Zenan; Basile, A. F.; Zheng, Yongju; Dhar, Sarit

    2016-07-01

    To investigate the mechanism by which Sb at the SiO2/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO2/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO2/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO2, and O2 traps, suggested to be interstitial Si in SiO2. However, electron trapping is reduced by a factor of ˜2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

  19. Localization of Si/SiO2 Interface States: Properties and Physical Implications

    NASA Astrophysics Data System (ADS)

    Koiller, Belita; Dusko, Amintor; Saraiva, Andre

    2013-03-01

    Interface states (IS) form spontaneously at some semiconductor-barrier interfaces and they may improve or hinder electronic control and coherence for semiconductor-based qubits. Intrinsic Si/SiO2 IS and its hybridization to the Si bulk states were recently investigated within tight binding (TB) models. From the simplest model (1D), new insights emerge regarding the IS's energy and hybridization with the band states. In this work the 1D TB Hamiltonian is further explored, here within a Green's function formalism. The problem is solved exactly via a decimation technique based on renormalization group ideas. The IS thus obtained are strictly related to the junction of two semi-infinite chains modeling the Si material and the SiO2 barrier, excluding possible contributions from parameters (e.g. chain length) previously invoked. We obtain the energy of IS as well as the exponential longer (shorter) localization lengths into the Si (barrier) material. The IS may be probed experimentally by an external electric field, which modulates the capacitance of the system, or by the spacing between the two lowest levels, related to the valley splitting. Work partially supported by FAPERJ, CNPq, CAPES.

  20. Theoretical studies of the new radicals SiNNH and SiCOH

    NASA Astrophysics Data System (ADS)

    Fan, Kangnian; Iwata, Suehiro

    1992-07-01

    Geometry optimization and harmonic vibrational analysis were carried out for new radicals, SiNNH and SiCOH, as well as their isomers, HSiNN and HSiCO, at several levels of ab initio SCF calculations (ROHF, UHF and MCSCF) with the 6-31G* basis set. To examine the effects of electron correlation on the equilibrium geometry, the bond lengths rSiN and rNN of the isomer SiNNH were optimized with CI calculations. Each of these four molecules has been found to be slightly asymmetric with a 2A″ ground state. The predicted rotational constants suggest that the isomer SiNNH is one of the best candidates for the free radical detected in the envelope of the carbon star IRC+10216, and none of the other three species, HSiNN, SiCOH and HSiCO, can be that one. From the calculated results, the nature of the chemical bonds in these molecules has been discussed in detail.

  1. Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Yao, H.; Woollam, J. A.; Wang, P. J.; Tejwani, M. J.; Alterovitz, S. A.

    1993-01-01

    Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

  2. Absolute Calibration of Si iRMs used for Si Paleo-nutrient proxies

    NASA Astrophysics Data System (ADS)

    Vocke, Robert; Rabb, Savelas

    2016-04-01

    The Avogadro Project is an ongoing international effort, coordinated by the International Bureau of Weights and Measures (BIPM) and the International Avogadro Coordination (IAC) to redefine the SI unit mole in terms of the Avogadro constant and the SI unit kg in terms of the Planck constant. One of the outgrowths of this effort has been the development of a novel, precise and highly accurate method to measure calibrated (absolute) isotopic ratios that are traceable to the SI (Vocke et al., 2014 Metrologia 51, 361, Azuma et al., 2015 Metrologia 52 360). This approach has also been able to produce absolute Si isotope ratio data with lower levels of uncertainty when compared to the traditional "Atomic Weights" method of absolute isotope ratio measurement. Silicon isotope variations (reported as delta(Si30)and delta(Si29)) in silicic acid dissolved in ocean waters, in biogenic silica and in diatoms are extremely informative paleo-nutrient proxies. The utility and comparability of such measurements however depends on calibration with artifact isotopic Reference Materials (iRMs). We will be reporting new measurements on the iRMs NBS-28 (RM 8546 - Silica Sand), Diatomite, Big Batch and SRM 990 using the Avogadro measurement approach, comparing them with prior assessments of these iRMs.

  3. [Temperature-Dependent Photoluminescence Property Studies of SiN(x) Films with nc-Si].

    PubMed

    Liu, Jian-ping; Zheng, Yan; Liu, Hai-xu; Yu, Wei; Ding, Wen-ge; Lai, Wei-dong

    2016-03-01

    Silicon nitride (SiN(x)) films containing nanocrystalline silicon (nc-Si) were deposited on crystalline silicon substrate by facing-target sputtering technique. Thermal annealing process was performed at 450 degrees C for 50 min in a conventional furnace under FG(10% H2, 90% N2) ambient. The photoluminescece (PL) properties of the SiN(x) films with nc-Si were investigated by steady/transient PL spectra measurements by Fluorescence spectrometer with different temperatures. The PL processes could be attributed to the quantum confinement effect of nc-Si and the defects in the film. The PL peak position exhibits a small blue shift with the increasing of the excitation energy, which indicates that the PL portion of the nc-Si increased with smaller size. In addition, the PL lifetime increases and the PL intensity exhibits exponential increase as a result of the decreased temperature which supressed the nonradiative recombination process and then improved the radiative recombination. The PL lifetime of the film significantly reduces with the decreasing of the detection wavelength, which indicates that the PL process related to the the quantum confinement effect strongly depends on temperature. PMID:27400499

  4. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect

    Gatti, E. Pezzoli, F.; Grilli, E.; Isa, F.; Chrastina, D.; Isella, G.; Müller Gubler, E.

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3 μm thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3 × 10{sup 7 }cm{sup −2} and an interdiffusion layer at the well/barrier interface of 2.1 nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  5. Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands

    SciTech Connect

    Mashin, A. I.; Nezhdanov, A. V.; Filatov, D. O. Isakov, M. A.; Shengurov, V. G.; Chalkov, V. Yu.; Denisov, S. A.

    2010-11-15

    The method of confocal Raman microscopy is used for the first time to study the spatial distribution of elemental composition and elastic strains in self-assembled GexSi{sub 1-x}/Si(001) islands grown by the method of sublimation molecular-beam epitaxy in the GeH{sub 4} ambient. The lines related to vibrational modes Si-Si, Ge-Ge, and Si-Ge are identified in the Raman spectra measured in the regions with dimensions <100 nm on the surface of the samples. The spatial distribution of the Ge atomic fraction x in the Ge{sub x}Si{sub 1-x} alloy and of the elastic strain {epsilon} (averaged in depth over the island layer) have been calculated from the maps of the Raman shifts of the corresponding lines over the sample surface. The dependences of x and {epsilon} on the islands' growth temperature and on the nominal thickness of the deposited Ge layer have been studied.

  6. Thermal oxidation of Si/SiGe heterostructures for use in quantum dot qubits

    NASA Astrophysics Data System (ADS)

    Neyens, Samuel F.; Foote, Ryan H.; Knapp, T. J.; McJunkin, Thomas; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.

    Here we demonstrate dry thermal oxidation of a Si/SiGe heterostructure at 700°C and use a Hall bar device to measure the mobility after oxidation to be 43,000 cm2V-1s-1 at a carrier density of 4.1 ×1011 cm-2. Surprisingly, we find no significant reduction in mobility compared with an Al2O3 device made with atomic layer deposition on the same heterostructure, indicating thermal oxidation can be used to process Si/SiGe quantum dot devices. This result provides a path for investigating improvements to the gate oxide in Si/SiGe qubit devices, whose performance is believed to be limited by charge noise in the oxide layer. This work was supported in part by ARO (W911NF-12-0607) and NSF (DMR-1206915 and PHY-1104660). Development and maintenance of the growth facilities used for fabricating samples is supported by DOE (DE-FG02-03ER46028). This research utilized NSF-supported shared facilities at the University of Wisconsin-Madison.

  7. Temperature determination of the Si-SiC eutectic fixed point using thermocouples

    NASA Astrophysics Data System (ADS)

    Suherlan; Kim, Yong-Gyoo; Joung, Wukchul; Yang, Inseok

    2015-04-01

    The temperature of the Si-SiC eutectic fixed point for use in thermocouple thermometry has been determined. Three Si-SiC cells were fabricated from pure silicon powder within separate graphite crucibles. Each of the three cells was cycled through 17 melt-freeze cycles and subjected to temperatures above 1400 °C for a period of approximately 73 h, and none showed any sign of mechanical failure. The melting transition was measured using three types of thermocouple: one type S, one type B, and two Pt/Pd thermocouples calibrated at the fixed points of Ag, Cu, Fe-C, Co-C, and Pd (only for type B). The transition temperature, measured using the type S and two Pt/Pd thermocouples, was (1410.0 ± 0.8) °C with k = 2. However, the measurement uncertainty using the type B thermocouple was as large as 1.5 °C (k = 2) due to the inhomogeneity of the thermocouple. The repeatability of the three Si-SiC cells was calculated to be 0.3 °C, and the extremes of the temperature measurement differed by 0.8 °C.

  8. SiN-SiC nanofilm: A nano-functional ceramic with bipolar magnetic semiconducting character

    SciTech Connect

    Zhang, Jiahui; Li, Xingxing; Yang, Jinlong

    2014-04-28

    Nowadays, functional ceramics have been largely explored for application in various fields. However, magnetic functional ceramics for spintronics remain little studied. Here, we propose a nano-functional ceramic of sphalerite SiN-SiC nanofilm with intrinsic ferromagnetic order. Based on first principles calculations, the SiN-SiC nanofilm is found to be a ferromagnetic semiconductor with an indirect band gap of 1.71 eV. By mean field theory, the Curie temperature is estimated to be 304 K, close to room temperature. Furthermore, the valence band and conduction band states of the nanofilm exhibit inverse spin-polarization around the Fermi level. Thus, the SiN-SiC nanofilm is a typical bipolar magnetic semiconductor in which completely spin-polarized currents with reversible spin polarization can be created and controlled by applying a gate voltage. Such a nano-functional ceramic provides a possible route for electrical manipulation of carrier's spin orientation.

  9. Behavior of W-SiC/SiC dual layer tiles under LHD plasma exposure

    NASA Astrophysics Data System (ADS)

    Mohrez, Waleed A.; Kishimoto, Hirotatsu; Kohno, Yutaka; Hirotaki, S.; Kohyama, Akira

    2013-11-01

    Towards the early realization of fusion power reactors, high performance first wall and plasma facing components (PFCs) are essentially required. As one of the biggest challenges for this, high heat flux component (HHFC) design and R & D has been emphasized. This report provides the high performance HHFC materials R & D status and the first plasma exposure test result from large helical device (LHD). W-SiC/SiC dual layer tiles (hereafter, W-SiC/SiC) were developed by applied NITE process. This is the realistic concept of tungsten armor with ceramic composite substrates for fusion power reactors. The dual layer tiles were fabricated and tested their survival under the LHD divertor plasma exposure (Nominally 10 MW/m2 maximum heat load for 6 s operation cycle). The microstructure evolution, including crack and pore formation, was analyzed, besides the behavior of bonding layer between tungsten and SiC/SiC was evaluated by C-scanning images of ultrasonic method and Electron probe Micro-analyzer (EPMA). Thermal analysis was conducted by finite element method, where ANSYS code release 13.0 was used.

  10. Making Submicron CoSi2 Structures On Silicon Substrates

    NASA Technical Reports Server (NTRS)

    Nieh, Simon K. W.; Lin, True-Lon; Fathauer, Robert W.

    1989-01-01

    Experimetnal fabrication process makes submicron-sized structures of single-crystal metallic CoSi2 on silicon substrates. Amorphous Co:Si(1:2) crystallized by electron beam becoming single-crystal CoSi2. Remaining amorphous Co:Si then preferentially etched away. When fully developed, process used to make fine wires or dots exhibiting quantum confinement of charge carriers.

  11. Molten Salt Electrodeposition of Silicon in Cu-Si

    NASA Astrophysics Data System (ADS)

    Sokhanvaran, Samira

    Widespread use of solar energy has not been realized to date because its cost is not competitive with conventional energy sources. The high price of solar grade silicon has been one of the barriers against photovoltaic industry achieving its much anticipated growth. Therefore, developing a method, which is energy efficient and will deliver inexpensive silicon feedstock material is essential. The electrodeposition of Si from a cryolite-based melt was investigated in the present work as a possible solution. This study proposed electrowinning of Si in molten Cu-Si alloy, to decrease the working temperature and increase the efficiency. Solvent refining can be used to recover Si from Cu-Si and also as a second purification method. The physicochemical properties of the potential electrolyte, cryolite-SiO 2 melts, were studied in the first step of this work. The deposition potential of Si on a graphite cathode was measured to determine the working potential and the effect of SiO2 concentration on it. In the next step, the deposition potential of Si from cryolite--SiO2 melt on Cu and Cu-Si cathodes was determined using cyclic voltammetry. Next, the cathodic and the anodic current inefficiencies of the process were measured. Continuous analysis of the evolved gas enabled the instantaneous measurement of the current efficiency and the kinetics of the deposition. Finally, the effectiveness of the process in delivering high purity Si was investigated. Si dendrites were precipitated out of the Cu-Si cathode and recovered to determine the purity of the final product as the final step of this study. The produced Si was separated from the alloy matrix by crushing and acid leaching and the purity was reported. The findings of this research show that the proposed method has the potential to produce high purity silicon with low B content. Further development is required to remove some metallic impurities that are remained in Si.

  12. Reactivity and migration of hydrogen in a-Si:H

    SciTech Connect

    Biswas, R.; Li, Q.; Pan, B.C.; Yoon, Y.

    1997-07-01

    Tight-binding molecular dynamics calculations reveal a new mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicon and breaking their Si-Si bonds. The diffusing hydrogen carried with it a newly created dangling bond. These intermediate transporting states are densely populated in the network and have lower energies than H at the center of stretched Si-Si bonds.

  13. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    PubMed

    Pramann, Axel; Rienitz, Olaf

    2016-06-01

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  14. Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

    SciTech Connect

    Schnabel, Manuel; Weiss, Charlotte; Löper, Philipp; Janz, Stefan; Canino, Mariaconcetta; Summonte, Caterina; Wilshaw, Peter R.

    2014-07-14

    Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100 °C leads to a fairly homogeneous doping level of ≥4 × 10{sup 19} cm{sup −3} throughout the nc-SiC film. An unexpected anomaly in secondary ion mass spectroscopy quantification is observed and a method to circumvent it is shown. The nanostructure of the nc-SiC is only weakly affected as most of the diffusion occurs after the onset of crystallization. Annealing of doped a-SiC:H on Si substrates at 1100 °C leads to strong free carrier absorption at infrared wavelengths. This is demonstrated to originate from dopants that have diffused from the a-SiC:H to the Si substrate, and a method is developed to extract from it the doping profile in the Si substrate. The detection limit of this method is estimated to be ≤6 × 10{sup 13} cm{sup −2}. Doping levels of (0.5–3.5) × 10{sup 19} cm{sup −3} are induced at the Si substrate surface by both boron and phosphorus-doped a–SiC:H. When the Si substrate is doped opposite to the a-SiC:H p–n junctions are induced at a depth of 0.9–1.4 μm within the Si substrate for substrate resistivities of 1–10 Ω cm. Implications for different solar cell architectures are discussed. Dopant diffusion can be strongly reduced by lowering the annealing temperature to 1000 °C, albeit at the expense of reduced crystallinity.

  15. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    PubMed

    Pramann, Axel; Rienitz, Olaf

    2016-06-01

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram. PMID:27173726

  16. Structure determination and stability for Pa-Si, Np-Si and U-X-Si (X = Mo, Th, Np) phases from first-principles

    NASA Astrophysics Data System (ADS)

    Noordhoek, Mark J.; Andersson, David; Besmann, Theodore M.

    2016-10-01

    Density functional theory (DFT) calculations are performed for Pa-Si, Np-Si and uranium-based ternary silicide phases. Structure prediction calculations are used to search for competing phases in these systems. Results using the generalized gradient approximation (GGA), on-site Coulomb correction (GGA + U) and van der Waals interactions are presented. All Pa-Si compounds reported here are structurally analogous to those found in other actinide silicide systems. The electronic structure of Pa3Si2 shows the f-orbital electrons are largely unoccupied, which is in contrast to calculations for Np3Si2. For the Np-Si system, predicted stable structures using GGA differ from the experimentally observed structures, which, however, are energetically preferred in results using the GGA + U method. Structure searches for U2MoSi, U2ThSi2 and UNpSi reveal dynamically stable ternary compounds. The phonon dispersion curves, elastic constants and electronic density of states for the various phases are compared to those from previous DFT calculations for U-Si phases.

  17. Prediction of a hexagonal SiO2 phase affecting stabilities of MgSiO3 and CaSiO3 at multimegabar pressures.

    PubMed

    Tsuchiya, Taku; Tsuchiya, Jun

    2011-01-25

    Ultrahigh-pressure phase relationship of SiO(2) silica in multimegabar pressure condition is still quite unclear. Here, we report a theoretical prediction on a previously uncharacterized stable structure of silica with an unexpected hexagonal Fe(2)P-type form. This phase, more stable than the cotunnite-type structure, a previously postulated postpyrite phase, was discovered to stabilize at 640 GPa through a careful structure search by means of ab initio density functional computations over various structure models. This is the first evidential result of the pressure-induced phase transition to the Fe(2)P-type structure among all dioxide compounds. The crystal structure consists of closely packed, fairly regular SiO(9) tricapped trigonal prisms with a significantly compact lattice. Additional investigation further elucidates large effects of this phase change in SiO(2) on the stability of MgSiO(3) and CaSiO(3) at multimegabar pressures. A postperovskite phase of MgSiO(3) breaks down at 1.04 TPa along an assumed adiabat of super-Earths and yields Fe(2)P-type SiO(2) and CsCl (B2)-type MgO. CaSiO(3) perovskite, on the other hand, directly dissociates into SiO(2) and metallic CaO, skipping a postperovskite polymorph. Predicted ultrahigh-pressure and temperature phase diagrams of SiO(2), MgSiO(3), and CaSiO(3) indicate that the Fe(2)P-type SiO(2) could be one of the dominant components in the deep mantles of terrestrial exoplanets and the cores of gas giants. PMID:21209327

  18. Surface modification of SiC mirror by IARE method

    NASA Astrophysics Data System (ADS)

    Shen, Zhenfeng; Gao, Jinsong

    2011-02-01

    A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects .This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300°C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense, homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm, the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective.

  19. Surface modification of SiC mirror by IARE method

    NASA Astrophysics Data System (ADS)

    Shen, Zhenfeng; Gao, Jinsong

    2010-10-01

    A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects .This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300°C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense, homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm, the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective.

  20. Characterization of the B/Si surface electronic structures

    SciTech Connect

    Cao, R.; Yang, X.; Pianetta, P.

    1992-11-01

    High resolution angle resolved core level and valence band photoelectron spectroscopy have been used to characterize the electronic structures of the B/Si(111)-({radical}3 x {radical}3) surfaces. The results have been compared with theoretic calculations and other group III metals and Si terminated Si(111) surfaces that share the same type of surface reconstruction. We have observed a structure evolution from B-T{sub 4} to B-S{sub 5} and finally to Si- T{sub 4} as deposited boron atoms diffuse into the substrate with increasing annealing temperature. The chemically shifted component appearing in the Si 2p core level spectrum is attributed to charge transfer from the top layer Si and Si adatoms to the sublayer B-S{sub 5} atoms. For the Si/Si(111)-({radical}3 {times} {radical}3) surface, a newly discovered chemically shifted component is associated with back bond formation between the Si adatoms and the underneath Si atoms. A new emission feature has been observed in the valence band spectra unique to the B/Si(111)-({radical}3 {times} {radical}3) surface with B-S{sub 5} configuration. Thin Ge layer growth on this structure has also been performed, and we found that no epitaxial growth could be achieved and the underneath structure was little disturbed.