Sample records for si wire waveguide
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Propagation losses in undoped and n-doped polycrystalline silicon wire waveguides.
Zhu, Shiyang; Fang, Q; Yu, M B; Lo, G Q; Kwong, D L
2009-11-09
Polycrystalline silicon (polySi) wire waveguides with width ranging from 200 to 500 nm are fabricated by solid-phase crystallization (SPC) of deposited amorphous silicon (a-Si) on SiO(2) at a maximum temperature of 1000 degrees C. The propagation loss at 1550 nm decreases from 13.0 to 9.8 dB/cm with the waveguide width shrinking from 500 to 300 nm while the 200-nm-wide waveguides exhibit quite large loss (>70 dB/cm) mainly due to the relatively rough sidewall of waveguides induced by the polySi dry etch. By modifying the process sequence, i.e., first patterning the a-Si layer into waveguides by dry etch and then SPC, the sidewall roughness is significantly improved but the polySi crystallinity is degraded, leading to 13.9 dB/cm loss in the 200-nm-wide waveguides while larger losses in the wider waveguides. Phosphorus implantation causes an additional loss in the polySi waveguides. The doping-induced optical loss increases relatively slowly with the phosphorus concentration increasing up to 1 x 10(18) cm(-3), whereas the 5 x 10(18) cm(-3) doped waveguides exhibit large loss due to the dominant free carrier absorption. For all undoped polySi waveguides, further 1-2 dB/cm loss reduction is obtained by a standard forming gas (10%H(2) + 90%N(2)) annealing owing to the hydrogen passivation of Si dangling bonds present in polySi waveguides, achieving the lowest loss of 7.9 dB/cm in the 300-nm-wide polySi waveguides. However, for the phosphorus doped polySi waveguides, the propagation loss is slightly increased by the forming gas annealing.
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Silicon-based horizontal nanoplasmonic slot waveguides for on-chip integration.
Zhu, Shiyang; Liow, T Y; Lo, G Q; Kwong, D L
2011-04-25
Horizontal metal/insulator/Si/insulator/metal nanoplasmonic slot waveguide (PWG), which is inserted in a conventional Si wire waveguide, is fabricated using the standard Si-CMOS technology. A thin insulator between the metal and the Si core plays a key role: it not only increases the propagation distance as the theoretical prediction, but also prevents metal diffusion and/or metal-Si reaction. Cu-PWGs with the Si core width of ~134-21 nm and ~12-nm-thick SiO2 on each side exhibit a relatively low propagation loss of ~0.37-0.63 dB/µm around the telecommunication wavelength of 1550 nm, which is ~2.6 times smaller than the Al-counterparts. A simple tapered coupler can provide an effective coupling between the PWG and the conventional Si wire waveguide. The coupling efficiency as high as ~0.1-0.4 dB per facet is measured. The PWG allows a sharp bending. The pure bending loss of a Cu-PWG direct 90° bend is measured to be ~0.6-1.0 dB. These results indicate the potential for seamless integration of various functional nanoplasmonic devices in existing Si electronic photonic integrated circuits (Si-EPICs).
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Maegami, Yuriko; Takei, Ryohei; Omoda, Emiko; Amano, Takeru; Okano, Makoto; Mori, Masahiko; Kamei, Toshihiro; Sakakibara, Youichi
2015-08-10
We experimentally demonstrate low-loss and polarization-insensitive fiber-to-chip coupling spot-size converters (SSCs) comprised of a three dimensionally tapered Si wire waveguide, a SiON secondary waveguide, and a SiO(2) spacer inserted between them. Fabricated SSCs with the SiO(2) spacer exhibit fiber-to-chip coupling loss of 1.5 dB/facet for both the quasi-TE and TM modes and a small wavelength dependence in the C- and L-band regions. The SiON secondary waveguide is present only around the SSC region, which significantly suppresses the influence of the well-known N-H absorption of plasma-deposited SiON at around 1510 nm.
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Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.
Papes, Martin; Cheben, Pavel; Benedikovic, Daniel; Schmid, Jens H; Pond, James; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, Gonzalo; Ye, Winnie N; Xu, Dan-Xia; Janz, Siegfried; Dado, Milan; Vašinek, Vladimír
2016-03-07
Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO 2 upper cladding thin high-index Si 3 N 4 layers. The Si 3 N 4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.
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Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate.
Nishi, Hidetaka; Fujii, Takuro; Takeda, Koji; Hasebe, Koichi; Kakitsuka, Takaaki; Tsuchizawa, Tai; Yamamoto, Tsuyoshi; Yamada, Koji; Matsuo, Shinji
2016-08-08
We demonstrate monolithic integration of a 50-μm-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO2/Si substrate. The device exhibits 9.4-GHz/mA0.5 modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit.
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NASA Astrophysics Data System (ADS)
Ishizawa, Atsushi; Goto, Takahiro; Kou, Rai; Tsuchizawa, Tai; Matsuda, Nobuyuki; Hitachi, Kenichi; Nishikawa, Tadashi; Yamada, Koji; Sogawa, Tetsuomi; Gotoh, Hideki
2017-07-01
We demonstrate on-chip octave-spanning supercontinuum (SC) generation with a Si-wire waveguide (SWG). We precisely controlled the SWG width so that the group velocity becomes flat over a wide wavelength range. By adjusting the SWG length, we could reduce the optical losses due to two-photon absorption and pulse propagation. In addition, for efficient coupling between the laser pulse and waveguide, we fabricated a two-step inverse taper at both ends of the SWG. Using a 600-nm-wide SWG, we were able to generate a broadband SC spectrum at wavelengths from 1060 to 2200 nm at a -40 dB level with only 50-pJ laser energy from an Er-doped fiber laser oscillator. We found that we can generate an on-chip broadband SC spectrum with an SWG with a length even as small as 1.7 mm.
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Fujisawa, Takeshi; Makino, Shuntaro; Sato, Takanori; Saitoh, Kunimasa
2017-04-17
Ultimately low-loss 90° waveguide bend composed of clothoid and normal curves is proposed for dense optical interconnect photonic integrated circuits. By using clothoid curves at the input and output of 90° waveguide bend, straight and bent waveguides are smoothly connected without increasing the footprint. We found that there is an optimum ratio of clothoid curves in the bend and the bending loss can be significantly reduced compared with normal bend. 90% reduction of the bending loss for the bending radius of 4 μm is experimentally demonstrated with excellent agreement between theory and experiment. The performance is compared with the waveguide bend with offset, and the proposed bend is superior to the waveguide bend with offset in terms of fabrication tolerance.
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NASA Astrophysics Data System (ADS)
Haldar, Raktim; Mishra, V.; Dutt, Avik; Varshney, Shailendra K.
2016-10-01
In this work, we propose novel schemes to design on-chip ultra-compact optical directional couplers (DC) and broadband polarization beam splitters (PBS) based on off-centered and asymmetric dielectric slot waveguides, respectively. Slot dimensions and positions are optimized to achieve maximum coupling coefficients between two symmetric and non-symmetric slotted Si wire waveguides through overlap integral method. We observe >88% of enhancement in the coupling coefficients when the size-optimized slots are placed in optimal positions, with respect to the same waveguides with no slot. When the waveguides are parallel, in that case, a coupling length as short as 1.73 μm is accomplished for TM mode with the off-centered and optimized slots. This scheme enables us to design optical DC with very small footprint, L c ∼ 0.9 μm in the presence of S-bends. We also report a compact (L c ∼ 1.1 μm) on-chip broadband PBS with hybrid slots. Extinction ratios of 13 dB and 22.3 dB are realized with very low insertion loss (0.055 dB and 0.008 dB) for TM and TE modes at 1.55 μm, respectively. The designed PBS exhibits a bandwidth of 78 nm for the TM mode (C-and partial L-bands) and >100 nm for the TE mode (S + C + L wavelength bands). Such on-chip devices can be used to design compact photonic interconnects and quantum information processing units efficiently. We have also investigated the fabrication tolerances of the proposed devices and described the fabrication steps to realize such hybrid devices. Our results are in good agreement with 3D FDTD simulations.
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Waveguide bends from nanometric silica wires
NASA Astrophysics Data System (ADS)
Tong, Limin; Lou, Jingyi; Mazur, Eric
2005-02-01
We propose to use bent silica wires with nanometric diameters to guide light as optical waveguide bend. We bend silica wires with scanning tunneling microscope probes under an optical microscope, and wire bends with bending radius smaller than 5 μm are obtained. Light from a He-Ne laser is launched into and guided through the wire bends, measured bending loss of a single bend is on the order of 1 dB. Brief introductions to the optical wave guiding and elastic bending properties of silica wires are also provided. Comparing with waveguide bends based on photonic bandgap structures, the waveguide bends from silica nanometric wires show advantages of simple structure, small overall size, easy fabrication and wide useful spectral range, which make them potentially useful in the miniaturization of photonic devices.
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Komatsu, Masa-Aki; Saitoh, Kunimasa; Koshiba, Masanori
2009-10-12
We propose an ultra-small polarization splitter based on a resonant tunneling phenomenon. This polarization splitter consists of two identical horizontally oblong silicon wire waveguides separated by a vertical slot waveguide. The structural parameters of the central resonant slot waveguide are designed to couple only the TM-like mode between the left and right side silicon wire waveguides. Results from numerical simulation with the full-vectorial beam propagation method show that a 16-mum-long polarization splitter with extinction ratio better than -20 dB on the entire C-band is achieved.
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Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared
DOE Office of Scientific and Technical Information (OSTI.GOV)
Souhan, Brian; Lu, Ming; Grote, Richard R.
2014-10-28
CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz formore » a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.« less
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NASA Astrophysics Data System (ADS)
Kropf, M.; Pedrick, M.; Wang, X.; Tittmann, B. R.
2005-05-01
As per the recent advances in remote in situ monitoring of industrial equipment using long wire waveguides (~10m), novel applications of existing wave generation techniques and new acoustic modeling software have been used to advance waveguide technology. The amount of attainable information from an acoustic signal in such a system is limited by transmission through the waveguide along with frequency content of the generated waves. Magnetostrictive, and Electromagnetic generation techniques were investigated in order to maximize acoustic transmission along the waveguide and broaden the range of usable frequencies. Commercial EMAT, Magnetostrictive and piezoelectric disc transducers (through the innovative use of an acoustic horn) were utilized to generate waves in the wire waveguide. Insertion loss, frequency bandwidth and frequency range were examined for each technique. Electromagnetic techniques are shown to allow for higher frequency wave generation. This increases accessibility of dispersion curves providing further versatility in the selection of guided wave modes, thus increasing the sensitivity to physical characteristics of the specimen. Both electromagnetic and magnetostrictive transducers require the use of a ferromagnetic waveguide, typically coupled to a steel wire when considering long transmission lines (>2m). The interface between these wires introduces an acoustic transmission loss. Coupling designs were examined with acoustic finite element software (Coupled-Acoustic Piezoelectric Analysis). Simulations along with experimental results aided in the design of a novel joint which minimizes transmission loss. These advances result in the increased capability of remote sensing using wire waveguides.
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Novel polarization diversity without switch duplication of a Si-wire PILOSS optical switch.
Tanizawa, Ken; Suzuki, Keijiro; Ikeda, Kazuhiro; Namiki, Shu; Kawashima, Hitoshi
2016-04-04
We demonstrate the compact polarization diversity based on the bidirectional full-port use of a path-independent-insertion-loss (PILOSS) optical switch. A polarization-diversity 4 × 4 strictly non-blocking optical switch is developed using a single thermooptic PILOSS Si-wire switch and fiber-based polarization beam splitters (PBSs) and combiners (PBCs). We measure characteristics of the switch and confirm that the proposed configuration demonstrates the performance in the insertion loss, polarization-dependent loss (PDL), and differential group delay (DGD) comparable with that of a conventional polarization-diversity 4 × 4 PILOSS switch using double switch elements. On the other hand, higher crosstalk is observed. The crosstalk increase is associated with the backward crosstalk at a waveguide intersection based on a directional coupler. The effect of the backward crosstalk on the total crosstalk is estimated, and future prospects are discussed.
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NASA Astrophysics Data System (ADS)
Hayata, K.; Tsuji, Y.; Koshiba, M.
1992-10-01
A theoretical formulation of electron pulse propagation in quantum wire structures with mesoscopic scale cross sections is presented, assuming quantum ballistic transport of electron wave packets over a certain characteristic length. As typical mesoscopic structures for realizing coherent electron transmission, two traveling-wave configurations are considered: straight quantum wire waveguides and quantum wire bend structures (quantum whispering galleries). To estimate temporal features of the pulse during propagation, the walk off, the dispersion, and the pulse coherence lengths are defined as useful characteristic lengths. Numerical results are shown for ultrashort pulse propagation through rectangular wire waveguides. Effects due to an external electric field are discussed as well.
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Transducer Joint for Kidney-Stone Ultrasonics
NASA Technical Reports Server (NTRS)
Angulo, E. D.
1983-01-01
Ultrasonic therapy for kidney stones improved by new way of connecting wire-probe ultrasonic waveguide to transducer. Improved mounting allows joint to last long enough for effective treatment. Sheath and rubber dampers constrain lateral vibration of wire waveguide. Combination of V-shaped mounting groove, sheath, and rubber dampers increases life expectancy of wire 15 times or more.
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Enhanced coupling of terahertz radiation to cylindrical wire waveguides.
Deibel, Jason A; Wang, Kanglin; Escarra, Matthew D; Mittleman, Daniel
2006-01-09
Wire waveguides have recently been shown to be valuable for transporting pulsed terahertz radiation. This technique relies on the use of a scattering mechanism for input coupling. A radially polarized surface wave is excited when a linearly polarized terahertz pulse is focused on the gap between the wire waveguide and another metal structure. We calculate the input coupling efficiency using a simulation based on the Finite Element Method (FEM). Additional FEM results indicate that enhanced coupling efficiency can be achieved through the use of a radially symmetric photoconductive antenna. Experimental results confirm that such an antenna can generate terahertz radiation which couples to the radial waveguide mode with greatly improved efficiency.
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NASA Astrophysics Data System (ADS)
Kakihara, Kuniaki; Kono, Naoya; Saitoh, Kunimasa; Koshiba, Masanori
2006-11-01
This paper presents a new full-vectorial finite-element method in a local cylindrical coordinate system, to effectively analyze bending losses in photonic wires. The discretization is performed in the cross section of a three-dimensional curved waveguide, using hybrid edge/nodal elements. The solution region is truncated by anisotropic, perfectly matched layers in the cylindrical coordinate system, to deal properly with leaky modes of the waveguide. This approach is used to evaluate bending losses in silicon wire waveguides. The numerical results of the present approach are compared with results calculated with an equivalent straight waveguide approach and with reported experimental data. These comparisons together demonstrate the validity of the present approach based on the cylindrical coordinate system and also clarifies the limited validity of the equivalent straight waveguide approximation.
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Negredo, F; Blaicher, M; Nesic, A; Kraft, P; Ott, J; Dörfler, W; Koos, C; Rockstuhl, C
2018-06-01
Photonic wire bonds, i.e., freeform waveguides written by 3D direct laser writing, emerge as a technology to connect different optical chips in fully integrated photonic devices. With the long-term vision of scaling up this technology to a large-scale fabrication process, the in situ optimization of the trajectory of photonic wire bonds is at stake. A prerequisite for the real-time optimization is the availability of a fast loss estimator for single-mode waveguides of arbitrary trajectory. Losses occur because of the bending of the waveguides and at transitions among sections of the waveguide with different curvatures. Here, we present an approach that resides on the fundamental mode approximation, i.e., the assumption that the photonic wire bonds predominantly carry their energy in a single mode. It allows us to predict in a quick and reliable way the pertinent losses from pre-computed modal properties of the waveguide, enabling fast design of optimum paths.
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Deibel, Jason A; Berndsen, Nicholas; Wang, Kanglin; Mittleman, Daniel M; van der Valk, Nick C; Planken, Paul C M
2006-09-18
We report on the emission patterns from THz plasmons propagating towards the end of cylindrical metal waveguides. Such waveguides exhibit low loss and dispersion, but little is known about the dynamics of the terahertz radiation at the end of the waveguide, specifically in the near- and intermediate-field. Our experimental results and numerical simulations show that the near- and intermediate-field terahertz spectra, measured at the end of the waveguide, vary with the position relative to the waveguide. This is explained by the frequency-dependent diffraction occurring at the end of the cylindrical waveguide. Our results show that near-field changes in the frequency content of THz pulses for increasing wire-detector distances must be taken into account when studying surface waves on cylindrical waveguides.
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NASA Astrophysics Data System (ADS)
Marchack, Nathan; Khater, Marwan; Orcutt, Jason; Chang, Josephine; Holmes, Steven; Barwicz, Tymon; Kamlapurkar, Swetha; Green, William; Engelmann, Sebastian
2017-03-01
The LER and LWR of subtractively patterned Si and SiN waveguides was calculated after each step in the process. It was found for Si waveguides that adjusting the ratio of CF4:CHF3 during the hard mask open step produced reductions in LER of 26 and 43% from the initial lithography for isolated waveguides patterned with partial and full etches, respectively. However for final LER values of 3.0 and 2.5 nm on fully etched Si waveguides, the corresponding optical loss measurements were indistinguishable. For SiN waveguides, introduction of C4H9F to the conventional CF4/CHF3 measurement was able to reduce the mask height budget by a factor of 5, while reducing LER from the initial lithography by 26%.
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Practical microstructured and plasmonic terahertz waveguides
NASA Astrophysics Data System (ADS)
Markov, Andrey
The terahertz frequency range, with frequencies lying between 100 GHz and 10 THz, has strong potential for various technological and scientific applications such as sensing, imaging, communications, and spectroscopy. Most terahertz (THz) sources are immobile and THz systems use free-space propagation in dry air where losses are minimal. Designing efficient THz waveguides for flexible delivery of broadband THz radiation is an important step towards practical applications of terahertz techniques. THz waveguides can be very useful on the system integration level when used for connection of the diverse THz point devices, such as sources, filters, sensor cells, detectors, etc. The most straightforward application of waveguides is to deliver electromagnetic waves from the source to the point of detection. Cumbersome free-space optics can be replaced by waveguides operating in the THz range, which could lead to the development of compact THz time domain spectroscopy systems. Other promising applications of THz waveguides are in sensing and imaging. THz waveguides have also been shown to operate in subwavelength regimes, offering mode confinement in waveguide structures with a size smaller than the diffraction limit, and thus, surpassing the resolution of free-space THz imaging systems. In order to design efficient terahertz waveguides, the frequency dependent loss and dispersion of the waveguide must be minimized. A possible solution would be to increase the fraction of mode power propagating through air. In this thesis, the usage of planar porous air/dielectric waveguides and metal wire/dielectric hybrid terahertz fibers will be discussed. First, I present a novel design of a planar porous low-loss waveguide, describe its fabrication, and characterize it in view of its potential applications as a low-loss waveguide and sensor in the THz spectral range. The waveguide structure features a periodic sequence of layers of thin (25-50 mum) polyethylene film that are separated by low-loss air layers of comparable thickness. A large fraction of the modal fields in these waveguides is guided in the low-loss air region, thus effectively reducing the waveguide transmission losses. I consider that such waveguides can be useful not only for low-loss THz wave delivery, but also for sensing of biological and chemical specimens in the terahertz region, by placing the recognition elements directly into the waveguide microstructure. The main advantage of the proposed planar porous waveguide is the convenient access to its optical mode, since the major portion of THz power launched into such a waveguide is confined within the air layers. Moreover, small spacing between the layers promotes rapid loading of the analyte into the waveguide due to strong capillary effect (< 1 s filling of a 10 cm long waveguide with an analyte). The transmission and absorption properties of such waveguides have been investigated both experimentally using THz-TDS spectroscopy and theoretically using finite element software. The modal refractive index of porous waveguides is smaller compared to pure polymer and it is easy to adjust by changing the air spacing between the layers, as well as the number of layers in the core. The porous waveguide exhibits considerably smaller transmission losses than bulk material. In the following chapters I review another promising approach towards designing of low-loss, low-dispersion THz waveguides. The hybrid metal/dielectric waveguides use a plasmonic mode guided in the gap between two parallel wires that are, in turn, encapsulated inside a low-loss, low-refractive index, micro-structured cladding that provides mechanical stability and isolation from the environment. I describe several promising techniques that can be used to encapsulate the two-wire waveguides, while minimizing the negative impact of dielectric cladding on the waveguide optical properties. In particular, I detail the use of low-density foams and microstructured plastic claddings as two enabling materials for the two-wire waveguide encapsulation. The hybrid fiber design is more convenient for practical applications than a classic two metal wire THz waveguide as it allows direct manipulations of the fiber without the risk of perturbing its core-guided mode. I present a detailed analysis of the modal properties of the hybrid metal/dielectric waveguides, compare them with the properties of a classic two-wire waveguide, and then present strategies for the improvement of hybrid waveguide performance by using higher cladding porosity or utilizing inherently porous cladding material. I study coupling efficiency into hybrid waveguides and conclude that it can be relatively high (>50%) in the broad frequency range ˜0.5 THz. Not surprisingly, optical properties of such fibers are inferior to those of a classic two-wire waveguide due to the presence of lossy dielectric near an inter-wire gap. At the same time, composite fibers outperform porous fibers of the same geometry both in bandwidth of operation and in lower dispersion. I demonstrate that hybrid metal/dielectric porous waveguides can have a very large operational bandwidth, while supporting tightly confined, air-bound modes both at high and low frequencies. This is possible as, at higher frequencies, hybrid fibers can support ARROW-like low-loss air-bound modes, while changing their guidance mechanism to plasmonic confinement in the inter-wire air gap at lower frequencies. Finally, I describe an intriguing resonant property of some hybrid plasmonic modes of metal / dielectric waveguides that manifests itself in the strong frequency dependent change in the modal confinement from dielectric-bound to air-bound. I discuss how this property can be used to construct THz refractometers. Introduction of even lossless analytes into the fiber core leads to significant changes in the modal losses, which is used as a transduction mechanism. The resolution of the refractometer has been investigated numerically as a function of the operation frequency and the geometric parameters of the fiber. With a refractive index resolution on the order of ˜10-3 RIU, the composite fiber-based sensor is capable of identifying various gaseous analytes and aerosols or measuring the concentration of dust particles in the air.
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Polydimethylsiloxane-based optical waveguides for tetherless powering of floating microstimulators
NASA Astrophysics Data System (ADS)
Ersen, Ali; Sahin, Mesut
2017-05-01
Neural electrodes and associated electronics are powered either through percutaneous wires or transcutaneous powering schemes with energy harvesting devices implanted underneath the skin. For electrodes implanted in the spinal cord and the brain stem that experience large displacements, wireless powering may be an option to eliminate device failure by the breakage of wires and the tethering of forces on the electrodes. We tested the feasibility of using optically clear polydimethylsiloxane (PDMS) as a waveguide to collect the light in a subcutaneous location and deliver to deeper regions inside the body, thereby replacing brittle metal wires tethered to the electrodes with PDMS-based optical waveguides that can transmit energy without being attached to the targeted electrode. We determined the attenuation of light along the PDMS waveguides as 0.36±0.03 dB/cm and the transcutaneous light collection efficiency of cylindrical waveguides as 44%±11% by transmitting a laser beam through the thenar skin of human hands. We then implanted the waveguides in rats for a month to demonstrate the feasibility of optical transmission. The collection efficiency and longitudinal attenuation values reported here can help others design their own waveguides and make estimations of the waveguide cross-sectional area required to deliver sufficient power to a certain depth in tissue.
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Chip-to-chip interconnects based on 3D stacking of optoelectrical dies on Si
NASA Astrophysics Data System (ADS)
Duan, P.; Raz, O.; Smalbrugge, B. E.; Duis, J.; Dorren, H. J. S.
2012-01-01
We demonstrate a new approach to increase the optical interconnection bandwidth density by stacking the opto-electrical dies directly on the CMOS driver. The suggested implementation is aiming to provide a wafer scale process which will make the use of wire bonding redundant and will allow for impedance matched metallic wiring between the electronic driving circuit and its opto-electronic counter part. We suggest the use of a thick photoresist ramp between CMOS driver and opto-electrical dies surface as the bridge for supporting co-plannar waveguides (CPW) electrically plated with lithographic accuracy. In this way all three dimensions of the interconnecting metal layer, width, length and thickness can be completely controlled. In this 1st demonstration all processing is done on commercially available devices and products, and is compatible with CMOS processing technology. To test the applicability of CPW instead of wire bonds for interconnecting the CMOS circuit and opto-electronic chips, we have made test samples and tested their performance at speeds up to 10 Gbps. In this demonstration, a silicon substrate was used on which we evaporated gold co-planar waveguides (CPW) to mimic a wire on the driver. An optical link consisting of a VCSEL chip and a photodiode chip has been assembled and fully characterized using optical coupling into and out of a multimode fiber (MMF). A 10 Gb/s 27-1 NRZ PRBS signal transmitted from one chip to another chip was detected error free. A 4 dB receiver sensitivity penalty is measured for the integrated device compared to a commercial link.
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Silicon Integrated Optics: Fabrication and Characterization
NASA Astrophysics Data System (ADS)
Shearn, Michael Joseph, II
For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.
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Novel Waveguide Structures in the Terahertz Frequency Range
NASA Astrophysics Data System (ADS)
Mbonye, Marx
Over the last decade, considerable research interest has peaked in realizing an efficient Terahertz (THz) waveguide for potential applications in imaging, sensing, and communications applications. Two of the promising candidates are the two-wire waveguide and the parallel-plate waveguide (PPWG). I present theoretical and experimental evidence that show that the two-wire waveguide supports low loss terahertz pulse propagation, and illustrate that the mode pattern at the end of the waveguide resembles that of a dipole. In comparison to the weakly guided Sommerfeld wave of a single wire waveguide, this two-wire structure exhibits much lower bending losses. I also observe that a commercial 300-Ohm two-wire TVantenna cable can be used for guiding frequency components of up to 0.2 THz, although these cables are generally designed to operate only up to about 800 MHz. The parallel-plate waveguide is another promising candidate that would make an efficient THz waveguide, since it has relatively low Ohmic losses. The transverse electromagnetic mode (TEM) of this waveguide has been generally preferred since it has no cutoff frequency, and therefore no group velocity dispersion. Utilizing this TEM mode, I study the reflection of THz radiation at the end of a PPWG, due to the impedance mismatch between the propagating transverse-electromagnetic mode and the free-space background. I find that for a PPWG with uniformly spaced plates, the reflection coefficient at the output face increases as the plate separation decreases, consistent with predictions by early low frequency ray optical theory. I observe this same trend in tapered PPWGs, when the input separation is fixed, and the output separation is varied. In another study, I investigate how to minimize diffraction losses in PPWGs by using plates with slightly concave surfaces. Using a simple "bouncing plane wave" analysis, I demonstrate how to determine an ideal radius of curvature for a waveguide operating at a given THz frequency. I perform a detailed experimental and simulation study that illustrates, for a waveguide with a plate separation of 1 cm, one can inhibit the diffraction around a frequency of 0.1 THz, when the surface has a curvature of 6.7 cm. Using much longer PPWGs (about 170cm), I reliably measure the overall losses in a PPWG with a radius of curvature of R=6.7 cm, and find it to be less than 1db/m around the design frequency (of 0.1 THz). This is very close to the lowest achieved loss to date with any terahertz waveguide.
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Optical Waveguides Written in Silicon with Femtosecond Laser
NASA Astrophysics Data System (ADS)
Pavlov, Ihor; Tokel, Onur; Pavlova, Svitlana; Kadan, Viktor; Makey, Ghaith; Turnali, Ahmed; Ilday, Omer
Silicon is one of the most widely used materials in modern technology, ranging from electronics and Si-photonics to microfluidic and sensor applications. Despite the long history of Si-based devices, and the strong demand for opto-electronical integration, 3D Si laser processing technology is still challenging. Recently, nanosecond-pulsed laser was used to fabricate embedded holographic elements in Si. However, until now, there was no demonstration of femtosecond-laser-written optical elements inside Si. In this paper, we present optical waveguides written deep inside Si with 1.5 um femtosecond laser. The laser beam, with 2 uJ pulse energy and 350 fs pulse duration focused inside Si sample, produces permanent modification of Si. By moving the lens along the beam direction we were able to produce optical waveguides up to 5 mm long. The diameter of the waveguide is measured to be 10 um. The waveguides were characterized with both optical shadowgraphy and far field imaging after CW light coupling. We observed nearly single mode propagation of light inside of the waveguide. The obtained difference of refractive index inside of the waveguide, is 2.5*10-4. TUBITAK Grant 113M930, TUBITAK Grant 114F256.
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Silicon waveguided components for the long-wave infrared region
NASA Astrophysics Data System (ADS)
Soref, Richard A.; Emelett, Stephen J.; Buchwald, Walter R.
2006-10-01
We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 1.55 µm telecom range into the wide infrared from 1.55 to 100 µm. The Si rib-membrane waveguide offers low-loss transmission from 1.2 to 6 µm and from 24 to 100 µm. This waveguide, which is compatible with Si microelectronics manufacturing, is constructed from silicon-on-insulator by etching away the oxide locally beneath the rib. Alternatively, low-loss waveguiding from 1.9 to 14.7 µm is assured by employing a crystal Ge rib grown directly upon the Si substrate. The Si-based hollow-core waveguide is an excellent device that minimizes loss due to silicon's 6-24 µm multi-phonon absorption. Here the rectangular air-filled core is surrounded by SiGe/Si multi-layer anti-resonant or Bragg claddings. The hollow channel offers less than 1.7 dB cm-1 loss from 1.2 to 100 µm. .
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Microwave transmission measurements through a magnetic photonic crystal
NASA Astrophysics Data System (ADS)
Radwan, Mohamed Zein; Dewar, Graeme
We have measured the 12 - 18 GHz microwave transmission through, and the reflection from, a nickel zinc ferrite penetrated by a wire lattice. The metamaterial efficiently transmitted microwaves under conditions for which the index of refraction was negative. The wires, 0.29 mm in diameter, were threaded through Teflon tubes and centered in holes 1.7 mm in diameter drilled through the ferrite. The holes formed a square array with a lattice constant of 3.0 mm. A ferrite sample containing the wire array filled a length of 3.0 cm inside standard WR-62 waveguide and a static magnetic field between 0.042 and 13.0 kOe was applied parallel to the wires. We measured the transmission relative to an open waveguide and the reflection relative to a reflective metal plate across the waveguide face. We observed transmission modes at combinations of magnetic field and microwave frequency for which both the permeability of the ferrite and permittivity of the wire array were negative.
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Yang, Peidong; Law, Matt; Sirbuly, Donald J.; Johnson, Justin C.; Saykally, Richard; Fan, Rong; Tao, Andrea
2012-10-02
Nanoribbons and nanowires having diameters less than the wavelength of light are used in the formation and operation of optical circuits and devices. Such nanostructures function as subwavelength optical waveguides which form a fundamental building block for optical integration. The extraordinary length, flexibility and strength of these structures enable their manipulation on surfaces, including the precise positioning and optical linking of nanoribbon/wire waveguides and other nanoribbon/wire elements to form optical networks and devices. In addition, such structures provide for waveguiding in liquids, enabling them to further be used in other applications such as optical probes and sensors.
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Densmore, A; Xu, D-X; Janz, S; Waldron, P; Mischki, T; Lopinski, G; Delâge, A; Lapointe, J; Cheben, P; Lamontagne, B; Schmid, J H
2008-03-15
We demonstrate a new silicon photonic wire waveguide evanescent field (PWEF) sensor that exploits the strong evanescent field of the transverse magnetic mode of this high-index-contrast, submicrometer-dimension waveguide. High sensitivity is achieved by using a 2 mm long double-spiral waveguide structure that fits within a compact circular area of 150 microm diameter, facilitating compatibility with commercial spotting apparatus and the fabrication of densely spaced sensor arrays. By incorporating the PWEF sensor element into a balanced waveguide Mach-Zehnder interferometer circuit, a minimum detectable mass of approximately 10 fg of streptavidin protein is demonstrated with near temperature-independent response.
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Loss reduction in silicon nanophotonic waveguide micro-bends through etch profile improvement
NASA Astrophysics Data System (ADS)
Selvaraja, Shankar Kumar; Bogaerts, Wim; Van Thourhout, Dries
2011-04-01
Single mode silicon photonic wire waveguides allow low-loss sharp micro-bends, which enables compact photonic devices and circuits. The circuit compactness is achieved at the cost of loss induced by micro-bends, which can seriously affect the device performance. The bend loss strongly depends on the bend radius, polarization, waveguide dimension and profile. In this paper, we present the effect of waveguide profile on the bend loss. We present waveguide profile improvement with optimized etch chemistry and the role of etch chemistry in adapting the etch profile of silicon is investigated. We experimentally demonstrate that by making the waveguide sidewalls vertical, the bend loss can be reduced up to 25% without affecting the propagation loss of the photonic wires. The bend loss of a 2 μm bend has been reduced from 0.039dB/90° bend to 0.028dB/90° bend by changing the sidewall angle from 81° to 90°, respectively. The propagation loss of 2.7 ± 0.1dB/cm and 3 ± 0.09dB/cm was observed for sloped and vertical photonic wires respectively was obtained.
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Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopy
NASA Technical Reports Server (NTRS)
Wang, Yan; Chudgar, Mona H.; Jackson, Howard E.; Miller, Jeffrey S.; De Brabander, Gregory N.; Boyd, Joseph T.
1993-01-01
Photon scanning tunneling microscopy (PSTM) is used to characterize Si3N4/Si02 optical channel waveguides being used for integrated optical-micromechanical sensors. PSTM utilizes an optical fiber tapered to a fine point which is piezoelectrically positioned to measure the decay of the evanescent field intensity associated with the waveguide propagating mode. Evanescent field decays are recorded for both ridge channel waveguides and planar waveguide regions. Values for the local effective refractive index are calculated from the data for both polarizations and compared to model calculations.
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Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions
NASA Technical Reports Server (NTRS)
Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard
2012-01-01
Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to future NASA missions. The Global Atmospheric Composition Mission (GACM) in the NRC Decadel Survey will need low-noise amplifiers with extremely low noise temperatures, either at room temperature or for cryogenic applications, for atmospheric remote sensing.
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Bending and coupling losses in terahertz wire waveguides.
Astley, Victoria; Scheiman, Julianna; Mendis, Rajind; Mittleman, Daniel M
2010-02-15
We present an experimental study of several common perturbations of wire waveguides for terahertz pulses. Sommerfeld waves retain significant signal strength and bandwidth even with large gaps in the wire, exhibiting more efficient recoupling at higher frequencies. We also describe a detailed study of bending losses. For a given turn angle, we observe an optimum radius of curvature that minimizes the overall propagation loss. These results emphasize the impact of the distortion of the spatial mode on the radiative bend loss.
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Sensitivity Enhancement in Si Nanophotonic Waveguides Used for Refractive Index Sensing
Shi, Yaocheng; Ma, Ke; Dai, Daoxin
2016-01-01
A comparative study is given for the sensitivity of several typical Si nanophotonic waveguides, including SOI (silicon-on-insulator) nanowires, nanoslot waveguides, suspended Si nanowires, and nanofibers. The cases for gas sensing (ncl ~ 1.0) and liquid sensing (ncl ~ 1.33) are considered. When using SOI nanowires (with a SiO2 buffer layer), the sensitivity for liquid sensing (S ~ 0.55) is higher than that for gas sensing (S ~ 0.35) due to lower asymmetry in the vertical direction. By using SOI nanoslot waveguides, suspended Si nanowires, and Si nanofibers, one could achieve a higher sensitivity compared to sensing with a free-space beam (S = 1.0). The sensitivity for gas sensing is higher than that for liquid sensing due to the higher index-contrast. The waveguide sensitivity of an optimized suspended Si nanowire for gas sensing is as high as 1.5, which is much higher than that of a SOI nanoslot waveguide. Furthermore, the optimal design has very large tolerance to the core width variation due to the fabrication error (∆w ~ ±50 nm). In contrast, a Si nanofiber could also give a very high sensitivity (e.g., ~1.43) while the fabrication tolerance is very small (i.e., ∆w < ±5 nm). The comparative study shows that suspended Si nanowire is a good choice to achieve ultra-high waveguide sensitivity. PMID:26950132
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Sensitivity Enhancement in Si Nanophotonic Waveguides Used for Refractive Index Sensing.
Shi, Yaocheng; Ma, Ke; Dai, Daoxin
2016-03-03
A comparative study is given for the sensitivity of several typical Si nanophotonic waveguides, including SOI (silicon-on-insulator) nanowires, nanoslot waveguides, suspended Si nanowires, and nanofibers. The cases for gas sensing (ncl ~ 1.0) and liquid sensing (ncl ~ 1.33) are considered. When using SOI nanowires (with a SiO₂ buffer layer), the sensitivity for liquid sensing (S ~ 0.55) is higher than that for gas sensing (S ~ 0.35) due to lower asymmetry in the vertical direction. By using SOI nanoslot waveguides, suspended Si nanowires, and Si nanofibers, one could achieve a higher sensitivity compared to sensing with a free-space beam (S = 1.0). The sensitivity for gas sensing is higher than that for liquid sensing due to the higher index-contrast. The waveguide sensitivity of an optimized suspended Si nanowire for gas sensing is as high as 1.5, which is much higher than that of a SOI nanoslot waveguide. Furthermore, the optimal design has very large tolerance to the core width variation due to the fabrication error (∆w ~ ±50 nm). In contrast, a Si nanofiber could also give a very high sensitivity (e.g., ~1.43) while the fabrication tolerance is very small (i.e., ∆w < ±5 nm). The comparative study shows that suspended Si nanowire is a good choice to achieve ultra-high waveguide sensitivity.
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NASA Astrophysics Data System (ADS)
Fukuda, M.; Ota, M.; Sumimura, A.; Okahisa, S.; Ito, M.; Ishii, Y.; Ishiyama, T.
2017-05-01
A plasmonic integrated circuit configuration comprising plasmonic and electronic components is presented and the feasibility for high-speed signal processing applications is discussed. In integrated circuits, plasmonic signals transmit data at high transfer rates with light velocity. Plasmonic and electronic components such as wavelength-divisionmultiplexing (WDM) networks comprising metal wires, plasmonic multiplexers/demultiplexers, and crossing metal wires are connected via plasmonic waveguides on the nanometer or micrometer scales. To merge plasmonic and electronic components, several types of plasmonic components were developed. To ensure that the plasmonic components could be easily fabricated and monolithically integrated onto a silicon substrate using silicon complementary metal-oxide-semiconductor (CMOS)-compatible processes, the components were fabricated on a Si substrate and made from silicon, silicon oxides, and metal; no other materials were used in the fabrication. The plasmonic components operated in the 1300- and 1550-nm-wavelength bands, which are typically employed in optical fiber communication systems. The plasmonic logic circuits were formed by patterning a silicon oxide film on a metal film, and the operation as a half adder was confirmed. The computed plasmonic signals can propagate through the plasmonic WDM networks and be connected to electronic integrated circuits at high data-transfer rates.
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Wiring up pre-characterized single-photon emitters by laser lithography
NASA Astrophysics Data System (ADS)
Shi, Q.; Sontheimer, B.; Nikolay, N.; Schell, A. W.; Fischer, J.; Naber, A.; Benson, O.; Wegener, M.
2016-08-01
Future quantum optical chips will likely be hybrid in nature and include many single-photon emitters, waveguides, filters, as well as single-photon detectors. Here, we introduce a scalable optical localization-selection-lithography procedure for wiring up a large number of single-photon emitters via polymeric photonic wire bonds in three dimensions. First, we localize and characterize nitrogen vacancies in nanodiamonds inside a solid photoresist exhibiting low background fluorescence. Next, without intermediate steps and using the same optical instrument, we perform aligned three-dimensional laser lithography. As a proof of concept, we design, fabricate, and characterize three-dimensional functional waveguide elements on an optical chip. Each element consists of one single-photon emitter centered in a crossed-arc waveguide configuration, allowing for integrated optical excitation and efficient background suppression at the same time.
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Dielectric Sensors Based on Electromagnetic Energy Tunneling
Siddiqui, Omar; Kashanianfard, Mani; Ramahi, Omar
2015-01-01
We show that metallic wires embedded in narrow waveguide bends and channels demonstrate resonance behavior at specific frequencies. The electromagnetic energy at these resonances tunnels through the narrow waveguide channels with almost no propagation losses. Under the tunneling behavior, high-intensity electromagnetic fields are produced in the vicinity of the metallic wires. These intense field resonances can be exploited to build highly sensitive dielectric sensors. The sensor operation is explained with the help of full-wave simulations. A practical setup consisting of a 3D waveguide bend is presented to experimentally observe the tunneling phenomenon. The tunneling frequency is predicted by determining the input impedance minima through a variational formula based on the Green function of a probe-excited parallel plate waveguide. PMID:25835188
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Sekiguchi, Shigeaki; Kurahashi, Teruo; Zhu, Lei; Kawaguchi, Kenichi; Morito, Ken
2012-04-09
We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.
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Misalignment tolerant efficient inverse taper coupler for silicon waveguide
NASA Astrophysics Data System (ADS)
Wang, Peng; Michael, Aron; Kwok, Chee Yee; Chen, Ssu-Han
2015-12-01
This paper describes an efficient fiber to submicron silicon waveguide coupling based on an inversely tapered silicon waveguide embedded in a SiO2 waveguide that is suspended in air. The inverse taper waveguide consist of a 50um long and 240nm thick silicon that linearly taper in width from 500nm to 120nm, which is embedded in SiO2. The SiO2 waveguide is 6um wide and 10um long. The simulation results show that the coupling loss of this new approach is 2.7dB including the interface loss at the input and output. The tolerance to fiber misalignment at the input of the coupler is 2um in both horizontal and vertical directions for only 1.5dB additional loss.
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Micropore and nanopore fabrication in hollow antiresonant reflecting optical waveguides
Holmes, Matthew R.; Shang, Tao; Hawkins, Aaron R.; Rudenko, Mikhail; Measor, Philip; Schmidt, Holger
2011-01-01
We demonstrate the fabrication of micropore and nanopore features in hollow antiresonant reflecting optical waveguides to create an electrical and optical analysis platform that can size select and detect a single nanoparticle. Micropores (4 μm diameter) are reactive-ion etched through the top SiO2 and SiN layers of the waveguides, leaving a thin SiN membrane above the hollow core. Nanopores are formed in the SiN membranes using a focused ion-beam etch process that provides control over the pore size. Openings as small as 20 nm in diameter are created. Optical loss measurements indicate that micropores did not significantly alter the loss along the waveguide. PMID:21922035
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Micropore and nanopore fabrication in hollow antiresonant reflecting optical waveguides.
Holmes, Matthew R; Shang, Tao; Hawkins, Aaron R; Rudenko, Mikhail; Measor, Philip; Schmidt, Holger
2010-01-01
We demonstrate the fabrication of micropore and nanopore features in hollow antiresonant reflecting optical waveguides to create an electrical and optical analysis platform that can size select and detect a single nanoparticle. Micropores (4 μm diameter) are reactive-ion etched through the top SiO(2) and SiN layers of the waveguides, leaving a thin SiN membrane above the hollow core. Nanopores are formed in the SiN membranes using a focused ion-beam etch process that provides control over the pore size. Openings as small as 20 nm in diameter are created. Optical loss measurements indicate that micropores did not significantly alter the loss along the waveguide.
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Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si
NASA Astrophysics Data System (ADS)
Palit, Sabarni; Kirch, Jeremy; Mawst, Luke; Kuech, Thomas; Jokerst, Nan Marie
2010-02-01
We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.
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NASA Astrophysics Data System (ADS)
Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun
2018-01-01
Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.
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Dispersion Characteristics of a Helix Loaded Waveguide.
1985-09-01
be employed to increase the bandwidth of gyroton amplifiers. The structure consists of helical wires contained concentrially 6. in a cylindrical...bandwidth of gyroton amplifiers. The structure consists of helical wires contained concentrially in a cylindrical conductor. The helical wires are close
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NASA Astrophysics Data System (ADS)
Bellegarde, Cyril; Pargon, Erwine; Sciancalepore, Corrado; Petit-Etienne, Camille; Lemonnier, Olivier; Ribaud, Karen; Hartmann, Jean-Michel; Lyan, Philippe
2018-02-01
The superior confinement of light provided by the high refractive index contrast in Si/SiO2 waveguides allows the use of sub-micron photonic waveguides. However, when downscaling waveguides to sub-micron dimensions, propagation losses become dominated by sidewall roughness scattering. In a previous study, we have shown that hydrogen annealing after waveguide patterning yielded smooth silicon sidewalls. Our optimized silicon patterning process flow allowed us to reduce the sidewall roughness down to 0.25 nm (1σ) while maintaining rectangular Strip waveguides. As a result, record low optical losses of less than 1 dB/cm were measured at telecom wavelengths for waveguides with dimensions larger than 350 nm. With Rib waveguides, losses are expected to be even lower. However, in this case the Si reflow during the H2 anneal leads to the formation of a foot at the bottom of the structure and to a rounding of its top. A compromise is thus to be found between low losses and conservation of the rectangular shape of the Rib waveguide. This work proposes to investigate the impact of temperature and duration of the H2 anneal on the Rib profile, sidewalls roughness and optical performances. The impact of a Si/SiO2 interface is also studied. The introduction of H2 thermal annealing allows to obtain very low losses of 0.5 dB/cm at 1310 nm wavelength for waveguide dimensions of 300-400 nm, but it comes along an increase of the pattern bottom width of 41%, with a final bottom width of 502 nm.
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GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.
Hashida, Ryohei; Sasaki, Takashi; Hane, Kazuhiro
2018-03-20
Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7 dB/mm around a wavelength of 1.55 μm. The microring radii ranged from 30 to 60 μm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.
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NASA Astrophysics Data System (ADS)
Hiraki, Tatsurou; Fukuda, Hiroshi; Yamada, Koji; Yamamoto, Tsuyoshi
2015-03-01
We demonstrated a small sensitivity to temperature variations of delay-line Mach-Zehnder interferometer (DL MZI) on a Si photonics platform. The key technique is to balance a thermo-optic effect in the two arms by using waveguide made of different materials. With silicon and silicon nitride waveguides, the fabricated DL MZI with a free-spectrum range of ~40 GHz showed a wavelength shift of -2.8 pm/K with temperature variations, which is 24 times smaller than that of the conventional Si-waveguide DL MZI. We also demonstrated the decoding of the 40-Gbit/s differential phase-shift keying signals to on-off keying signals with various temperatures. The tolerable temperature variation for the acceptable power penalty was significantly improved due to the small wavelength shifts.
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Hollow waveguides with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films
NASA Astrophysics Data System (ADS)
Zhao, Y.; Jenkins, M.; Measor, P.; Leake, K.; Liu, S.; Schmidt, H.; Hawkins, A. R.
2011-02-01
A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO2 and sputtered Ta2O5 provide a nearly optimal structure for optofluidic biofluorescence measurements with low optical loss, high fabrication yield, and low background photoluminescence. Compared to earlier structures made using Si3N4, the photoluminescence background of Ta2O5 based hollow core waveguides is decreased by a factor of 10 and the signal-to-noise ratio for fluorescent nanobead detection is improved by a factor of 12.
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Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications
NASA Astrophysics Data System (ADS)
Driscoll, Jeffrey B.
Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields are shown to contribute no time-averaged momentum. Furthermore, the vectoral modal components, in conjunction with the tensoral nature of the third-order susceptibility of Si, lead to nonlinear properties which are dependent on waveguide orientation with respect to the Si parent crystal and the construction of the modal electric field components. This consideration is used to maximize effective nonlinearity and realize nonlinear Kerr gratings along specific waveguide trajectories. Tight optical confinement leads to a natural enhancement of the intrinsically large effective nonlinearty of Si waveguides, and in fact, the effective nonlinearty can be made to be almost 106 times greater in Si waveguides than that of standard single-mode fiber. Such a large nonlinearity motivates chip-scale all-optical signal processing techniques. Wavelength conversion by both four-wave-mixing (FWM) and cross-phase-modulation (XPM) will be discussed, including a technique that allows for enhanced broadband discrete FWM over arbitrary spectral spans by modulating both the linear and nonlinear waveguide properties through periodic changes in waveguide geometry. This quasi-phase-matching approach has very real applications towards connecting mature telecom sources detectors and components to other spectral regimes, including the mid-IR. Other signal processing techniques such as all-optical modulation format conversion via XPM will also be discussed. This thesis will conclude by looking at ways to extend the bandwidth capacity of Si waveguide interconnects on chip. As the number of processing cores continues to scale as a means for computational performance gains, on-chip link capacity will become an increasingly important issue. Metallic traces have severe limitations and are envisioned to eventually bow to integrated photonic links. The aggregate bandwidth supported by a single waveguide link will therefore become a crucial consideration as integrated photonics approaches the CPU. One way to increase aggregate bandwidth is to utilize different eigen-modes of a multimode waveguide, and integrated waveguide mode-muxes and demuxes for achieving simultaneous mode-division-multiplexing and wavelength-division-multiplexing will be demonstrated.
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Integrated optical isolators using magnetic surface plasmon (Presentation Recording)
NASA Astrophysics Data System (ADS)
Shimizu, Hiromasa; Kaihara, Terunori; Umetsu, Saori; Hosoda, Masashi
2015-09-01
Optical isolators are one of the essential components to protect semiconductor laser diodes (LDs) from backward reflected light in integrated optics. In order to realize optical isolators, nonreciprocal propagation of light is necessary, which can be realized by magnetic materials. Semiconductor optical isolators have been strongly desired on Si and III/V waveguides. We have developed semiconductor optical isolators based on nonreciprocal loss owing to transverse magneto-optic Kerr effect, where the ferromagnetic metals are deposited on semiconductor optical waveguides1). Use of surface plasmon polariton at the interface of ferromagnetic metal and insulator leads to stronger optical confinement and magneto-optic effect. It is possible to modulate the optical confinement by changing the magnetic field direction, thus optical isolator operation is proposed2, 3). We have investigated surface plasmons at the interfaces between ferrimagnetic garnet/gold film, and applications to waveguide optical isolators. We assumed waveguides composed of Au/Si(38.63nm)/Ce:YIG(1700nm)/Si(220nm)/Si , and calculated the coupling lengths between Au/Si(38.63nm)/Ce:YIG plasmonic waveguide and Ce:YIG/Si(220nm)/Si waveguide for transversely magnetized Ce:YIG with forward and backward directions. The coupling length was calculated to 232.1um for backward propagating light. On the other hand, the coupling was not complete, and the length was calculated to 175.5um. The optical isolation by using the nonreciprocal coupling and propagation loss was calculated to be 43.7dB when the length of plasmonic waveguide is 700um. 1) H. Shimizu et al., J. Lightwave Technol. 24, 38 (2006). 2) V. Zayets et al., Materials, 5, 857-871 (2012). 3) J. Montoya, et al, J. Appl. Phys. 106, 023108, (2009).
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Silicone polymer waveguide bridge for Si to glass optical fibers
NASA Astrophysics Data System (ADS)
Kruse, Kevin L.; Riegel, Nicholas J.; Middlebrook, Christopher T.
2015-03-01
Multimode step index polymer waveguides achieve high-speed, (<10 Gb/s) low bit-error-rates for onboard and embedded circuit applications. Using several multimode waveguides in parallel enables overall capacity to reach beyond 100 Gb/s, but the intrinsic bandwidth limitations due to intermodal dispersion limit the data transmission rates within multimode waveguides. Single mode waveguides, where intermodal dispersion is not present, have the potential to further improve data transmission rates. Single mode waveguide size is significantly less than their multimode counterparts allowing for greater density of channels leading to higher bandwidth capacity per layer. Challenges in implementation of embedded single mode waveguides within printed circuit boards involves mass production fabrication techniques to create precision dimensional waveguides, precision alignment tolerances necessary to launch a mode, and effective coupling between adjoining waveguides and devices. An emerging need in which single mode waveguides can be utilized is providing low loss fan out techniques and coupling between on-chip transceiver devices containing Si waveguide structures to traditional single mode optical fiber. A polymer waveguide bridge for Si to glass optical fibers can be implemented using silicone polymers at 1310 nm. Fabricated and measured prototype devices with modeling and simulation analysis are reported for a 12 member 1-D tapered PWG. Recommendations and designs are generated with performance factors such as numerical aperture and alignment tolerances.
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Coupled resonator optical waveguides based on silicon-on-insulator photonic wires
NASA Astrophysics Data System (ADS)
Xia, Fengnian; Sekaric, Lidija; O'Boyle, Martin; Vlasov, Yurii
2006-07-01
Coupled resonator optical waveguides (CROWs) comprised of up to 16 racetrack resonators based on silicon-on-insulator (SOI) photonic wires were fabricated and characterized. The optical properties of the CROWs were simulated using measured single resonator parameters based on a matrix approach. The group delay property of CROWs was also analyzed. The SOI based CROWs consisting of multiple resonators have extremely small footprints and can find applications in optical filtering, dispersion compensation, and optical buffering. Moreover, such CROW structure is a promising candidate for exploration of low light level nonlinear optics due to its resonant nature and compact mode size (˜0.1μm2) in photonic wire.
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Measurement and Modeling of Dispersive Pulse Propagation in Drawn Wire Waveguides
NASA Technical Reports Server (NTRS)
Madaras, Eric I.; Kohl, Thomas W.; Rogers, Wayne P.
1995-01-01
An analytical model of dispersive pulse propagation in semi-infinite cylinders due to transient axially symmetric end conditions has been experimentally investigated. Specifically, the dispersive propagation of the first axially symmetric longitudinal mode in thin wire waveguides, which have ends in butt contact with longitudinal piezoelectric ultrasonic transducers, is examined. The method allows for prediction of a propagated waveform given a measured source waveform, together with the material properties of the cylinder. Alternatively, the source waveform can be extracted from measurement of the propagated waveform. The material properties required for implementation of the pulse propagation model are determined using guided wave phase velocity measurements. Hard tempered aluminum 1100 and 304 stainless steel wires, with 127, 305, and 406 micron diam., were examined. In general, the drawn wires were found to behave as transversely isotropic media.
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Measurement and modeling of dispersive pulse propagation in draw wire waveguides
NASA Technical Reports Server (NTRS)
Madaras, Eric I.; Kohl, Thomas W.; Rogers, Wayne P.
1995-01-01
An analytical model of dispersive pulse propagation in semi-infinite cylinders due to transient axially symmetric end conditions has been experimentally investigated. Specifically, the dispersive propagation of the first axially symmetric longitudinal mode in thin wire waveguides, which have ends in butt contact with longitudinal piezoelectric ultrasonic transducers, is examined. The method allows for prediction of a propagated waveform given a measured source waveform, together with the material properties of the cylinder. Alternatively, the source waveform can be extracted from measurement of the propagated waveform. The material properties required for implementation of the pulse propagation model are determined using guided wave phase velocity measurements. Hard tempered aluminum 1100 and 304 stainless steel wires, with 127, 305, and 406 micron diam., were examined. In general, the drawn wires were found to behave as transversely isotropic media.
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NASA Astrophysics Data System (ADS)
Jiao, Xue; Yang, Bo
2017-10-01
To study the lightning electromagnetic pulse (LEMP) coupling and protection problems of shielding enclosure with penetrating wire, we adopt the model with proper size which is close to the practical engineering and the two-step finite-difference time-domain (FDTD) method is used for calculation in this paper. It is shown that the coupling voltage on the circuit lead inside the enclosure increases about 34 dB, when add 1.0 m long penetrating wire at the aperture, comparing with the case without penetrating wire. Meanwhile, the waveform, has the same wave outline as the lightning current source, shows that the penetrating wire brings a large number of low frequency component into the enclosure. The coupling effect in the enclosure will reduce greatly when penetrating wire has electrical connection with the enclosure at the aperture and the coupling voltage increase only about 12 dB than the case without penetrating wire. Moreover, the results show that though the waveguide pipe can reduce the coupling effect brought by the penetrating wire, the exposing part of penetrating wire can increase the coupling when the penetrating wire outside the enclosure is longer than the waveguide pipe and the longer the exposing part is, the stronger the coupling is.
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FDTD simulation of amorphous silicon waveguides for microphotonics applications
NASA Astrophysics Data System (ADS)
Fantoni, A.; Lourenço, P.; Pinho, P.; Vieira, M.,
2017-05-01
In this work we correlate the dimension of the waveguide with small variations of the refractive index of the material used for the waveguide core. We calculate the effective modal refractive index for different dimensions of the waveguide and with slightly variation of the refractive index of the core material. These results are used as an input for a set of Finite Difference Time Domain simulation, directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding. The study considers simple linear waveguides with rectangular section for studying the modal attenuation expected at different wavelengths. Transmission efficiency is determined analyzing the decay of the light power along the waveguides. As far as near infrared wavelengths are considered, a-Si:H shows a behavior highly dependent on the light wavelength and its extinction coefficient rapidly increases as operating frequency goes into visible spectrum range. The simulation results show that amorphous silicon can be considered a good candidate for waveguide material core whenever the waveguide length is as short as a few centimeters. The maximum transmission length is highly affected by the a-Si:H defect density, the mid-gap density of states and by the waveguide section area. The simulation results address a minimum requirement of 300nm×400nm waveguide section in order to keep attenuation below 1 dB cm-1.
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Strong sub-terahertz surface waves generated on a metal wire by high-intensity laser pulses
Tokita, Shigeki; Sakabe, Shuji; Nagashima, Takeshi; Hashida, Masaki; Inoue, Shunsuke
2015-01-01
Terahertz pulses trapped as surface waves on a wire waveguide can be flexibly transmitted and focused to sub-wavelength dimensions by using, for example, a tapered tip. This is particularly useful for applications that require high-field pulses. However, the generation of strong terahertz surface waves on a wire waveguide remains a challenge. Here, ultrafast field propagation along a metal wire driven by a femtosecond laser pulse with an intensity of 1018 W/cm2 is characterized by femtosecond electron deflectometry. From experimental and numerical results, we conclude that the field propagating at the speed of light is a half-cycle transverse-magnetic surface wave excited on the wire and a considerable portion of the kinetic energy of laser-produced fast electrons can be transferred to the sub-surface wave. The peak electric field strength of the surface wave and the pulse duration are estimated to be 200 MV/m and 7 ps, respectively. PMID:25652694
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Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.
Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M
2011-05-23
We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.
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InP-based photonic integrated circuit platform on SiC wafer.
Takenaka, Mitsuru; Takagi, Shinichi
2017-11-27
We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.
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Plasmon resonant cavities in vertical nanowire arrays
Bora, Mihail; Bond, Tiziana C.; Fasenfest, Benjamin J.; Behymer, Elaine M.
2014-07-15
Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 10.sup.3 are possible due to plasmon focusing in the inter-wire space.
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NASA Astrophysics Data System (ADS)
Sacher, Wesley David
Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the coupling efficiency-bandwidth product. Finally, we describe polarization rotator-splitters and controllers based on mode conversion between the fundamental transverse magnetic polarized mode and a high order transverse electric polarized mode in vertically asymmetric waveguides. We demonstrate the first polarization rotator-splitters and controllers that are fully compatible with standard active Si photonic platforms and extend the concept to our Si3N4-on-Si photonic platform.
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Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E
2017-02-15
An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Murray, E.; Floether, F. F.; Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO{sub 2} cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using themore » on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.« less
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Controlling temperature dependence of silicon waveguide using slot structure.
Lee, Jong-Moo; Kim, Duk-Jun; Kim, Gwan-Ha; Kwon, O-Kyun; Kim, Kap-Joong; Kim, Gyungock
2008-02-04
We show that the temperature dependence of a silicon waveguide can be controlled well by using a slot waveguide structure filled with a polymer material. Without a slot, the amount of temperature-dependent wavelength shift for TE mode of a silicon waveguide ring resonator is very slightly reduced from 77 pm/ degrees C to 66 pm/ degrees C by using a polymer (WIR30-490) upper cladding instead of air upper cladding. With a slot filled with the same polymer, however, the reduction of the temperature dependence is improved by a pronounced amount and can be controlled down to -2 pm/ degrees C by adjusting several variables of the slot structure, such as the width of the slot between the pair of silicon wires, the width of the silicon wire pair, and the height of the silicon slab in our experiment. This measurement proves that a reduction in temperature dependence can be improved about 8 times more by using the slot structure.
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Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability.
Tien, Ming-Chun; Bauters, Jared F; Heck, Martijn J R; Blumenthal, Daniel J; Bowers, John E
2010-11-08
We investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The nonlinearity is modeled using Maxwell's wave equation with a small amount of refractive index perturbation. Effective n2 is used to describe the third-order nonlinearity, which is linearly proportional to the optical intensity. The effective n2 measured using continuous-wave self-phase modulation shows agreement with the theoretical calculation. The waveguide with 2.8-μm wide and 80-nm thick Si3N4 core has low loss and high power handling capability, with an effective n2 of about 9×10(-16) cm2/W.
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Novel optical interconnect devices applying mask-transfer self-written method
NASA Astrophysics Data System (ADS)
Ishizawa, Nobuhiko; Matsuzawa, Yusuke; Tokiwa, Yu; Nakama, Kenichi; Mikami, Osamu
2012-01-01
The introduction of optical interconnect technology is expected to solve problems of conventional electric wiring. One of the promising technologies realizing optical interconnect is the self-written waveguide (SWW) technology with lightcurable resin. We have developed a new technology of the "Mask-Transfer Self-Written (MTSW)" method. This new method enables fabrication of arrayed M x N optical channels at one shot of UV-light. Using this technology, several new optical interconnect devices and connection technologies have been proposed and investigated. In this paper, first, we introduce MTSW method briefly. Next, we show plug-in alignment approach using optical waveguide plugs (OWP) and a micro-hole array (MHA) which are made of the light-curable resin. Easy and high efficiency plug-in alignment between fibers and an optoelectronic-printed wiring board (OE-PWB), between a fiber and a VCSEL, so on will be feasible. Then, we propose a new three-dimensional (3D) branch waveguide. By controlling the irradiating angle through the photomask aperture, it will be possible to fabricate 2-branch and 4-branch waveguides with a certain branch angle. The 3D branch waveguide will be very promising in the future optical interconnects and coupler devices of the multicore optical fiber.
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High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.
Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S
2016-08-22
We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
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Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Chattopadhyay, Goutam; Pukala, David; Gaier, Todd; Soria, Mary; ManFung, King; Deal, William; Mei, Gerry; Radisic, Vesna; Lai, Richard
2009-01-01
To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).
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Broadband waveguide vibration sensor for turbine bearing health monitoring
NASA Astrophysics Data System (ADS)
Larsen, C.; Branch, N.
Mechanical waveguides have been demonstrated for monitoring turbine engine main shaft bearings. These devices are rugged metallic wires which can be installed inside the engine near the bearing and routed outside to the case where the electronics can be serviced. To date, the waveguide vibration sensor has been demonstrated on two engines with thrust bearings with seeded defects: a T63 and a Rolls Royce 501-KB5+ (industrial version of the T56).
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Micromechanical Waveguide Mounts for Hot Electron Bolometer Terahertz Mixers
NASA Astrophysics Data System (ADS)
Brandt, Michael; Jacobs, Karl; Honingh, C. E.; Stodolka, Jörg
The superior beam matching of waveguide horn antennas to a telescope suggests using waveguide mounts even at THz-frequencies. In contrast to the more common quasi-optical (substrate lens) designs, the exceedingly small dimensions of the waveguide require novel micro-mechanical fabrication technologies. We will present a novel fabrication scheme for 1.9 THz waveguide mixers for SOFIA. Hot Electron Bolometer devices (HEB) are fabricated on 2 μm thick Si3N4 membrane strips. The strips are robust enough to be mounted on a separately fabricated Si support frame using an adapted flip-chip technology. Mounted onto the frame, the devices can be easily positioned and glued into a copper waveguide mount. Further developments regarding micro-mechanical processes to fabricate this copper waveguide mount and the receiving horn antenna will be presented, as well as the KOSMA Micro Assembly Station and its capabilities to handle mixer substrates.
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Positioning and joining of organic single-crystalline wires
Wu, Yuchen; Feng, Jiangang; Jiang, Xiangyu; Zhang, Zhen; Wang, Xuedong; Su, Bin; Jiang, Lei
2015-01-01
Organic single-crystal, one-dimensional materials can effectively carry charges and/or excitons due to their highly ordered molecule packing, minimized defects and eliminated grain boundaries. Controlling the alignment/position of organic single-crystal one-dimensional architectures would allow on-demand photon/electron transport, which is a prerequisite in waveguides and other optoelectronic applications. Here we report a guided physical vapour transport technique to control the growth, alignment and positioning of organic single-crystal wires with the guidance of pillar-structured substrates. Submicrometre-wide, hundreds of micrometres long, highly aligned, organic single-crystal wire arrays are generated. Furthermore, these organic single-crystal wires can be joined within controlled angles by varying the pillar geometries. Owing to the controllable growth of organic single-crystal one-dimensional architectures, we can present proof-of-principle demonstrations utilizing joined wires to allow optical waveguide through small radii of curvature (internal angles of ~90–120°). Our methodology may open a route to control the growth of organic single-crystal one-dimensional materials with potential applications in optoelectronics. PMID:25814032
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Realization of optical multimode TSV waveguides for Si-Interposer in 3D-chip-stacks
NASA Astrophysics Data System (ADS)
Killge, S.; Charania, S.; Richter, K.; Neumann, N.; Al-Husseini, Z.; Plettemeier, D.; Bartha, J. W.
2017-05-01
Optical connectivity has the potential to outperform copper-based TSVs in terms of bandwidth at the cost of more complexity due to the required electro-optical and opto-electrical conversion. The continuously increasing demand for higher bandwidth pushes the breakeven point for a profitable operation to shorter distances. To integrate an optical communication network in a 3D-chip-stack optical through-silicon vertical VIAs (TSV) are required. While the necessary effort for the electrical/optical and vice versa conversion makes it hard to envision an on-chip optical interconnect, a chip-to-chip optical link appears practicable. In general, the interposer offers the potential advantage to realize electro-optical transceivers on affordable expense by specific, but not necessarily CMOS technology. We investigated the realization and characterization of optical interconnects as a polymer based waveguide in high aspect ratio (HAR) TSVs proved on waferlevel. To guide the optical field inside a TSV as optical-waveguide or fiber, its core has to have a higher refractive index than the surrounding material. Comparing different material / technology options it turned out that thermal grown silicon dioxide (SiO2) is a perfect candidate for the cladding (nSiO2 = 1.4525 at 850 nm). In combination with SiO2 as the adjacent polymer layer, the negative resist SU-8 is very well suited as waveguide material (nSU-8 = 1.56) for the core. Here, we present the fabrication of an optical polymer based multimode waveguide in TSVs proved on waferlevel using SU-8 as core and SiO2 as cladding. The process resulted in a defect-free filling of waveguide TSVs with SU-8 core and SiO2 cladding up to aspect ratio (AR) 20:1 and losses less than 3 dB.
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Silicon waveguide optical switch with embedded phase change material.
Miller, Kevin J; Hallman, Kent A; Haglund, Richard F; Weiss, Sharon M
2017-10-30
Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.
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High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes
Martinez, Nicholas J. D.; Derose, Christopher T.; Brock, Reinhard W.; ...
2016-08-09
Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical powermore » into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.« less
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NASA Astrophysics Data System (ADS)
Boettcher, Shannon
2010-03-01
Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.
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Metal wires for terahertz wave guiding.
Wang, Kanglin; Mittleman, Daniel M
2004-11-18
Sources and systems for far-infrared or terahertz (1 THz = 10(12) Hz) radiation have received extensive attention in recent years, with applications in sensing, imaging and spectroscopy. Terahertz radiation bridges the gap between the microwave and optical regimes, and offers significant scientific and technological potential in many fields. However, waveguiding in this intermediate spectral region still remains a challenge. Neither conventional metal waveguides for microwave radiation, nor dielectric fibres for visible and near-infrared radiation can be used to guide terahertz waves over a long distance, owing to the high loss from the finite conductivity of metals or the high absorption coefficient of dielectric materials in this spectral range. Furthermore, the extensive use of broadband pulses in the terahertz regime imposes an additional constraint of low dispersion, which is necessary for compatibility with spectroscopic applications. Here we show how a simple waveguide, namely a bare metal wire, can be used to transport terahertz pulses with virtually no dispersion, low attenuation, and with remarkable structural simplicity. As an example of this new waveguiding structure, we demonstrate an endoscope for terahertz pulses.
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Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.
Palit, Sabarni; Kirch, Jeremy; Huang, Mengyuan; Mawst, Luke; Jokerst, Nan Marie
2010-10-15
A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.
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Silicon-based optoelectronics: Monolithic integration for WDM
NASA Astrophysics Data System (ADS)
Pearson, Matthew Richard T.
2000-10-01
This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.
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NASA Astrophysics Data System (ADS)
Turner-Evans, Dan
Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction arrays. These devices offer potential efficiencies of 34%, as demonstrated through an analytical model and optoelectronic simulations. SiGe and Ge wires were fabricated via chemical-vapor deposition and reactive ion etching. GaAs was then grown on these substrates at the National Renewable Energy Lab and yielded ns lifetime components, as required for achieving high efficiency devices.
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Xu, Xingsheng; Li, Xingyun
2015-01-01
We investigate the photoluminescence (PL) spectra and the time-resolved PL decay process from colloidal quantum dots on SiN/SiO2 wet etched via BOE (HF:NH4F:H2O). The spectrum displays multi-peak shapes that vary with irradiation time. The evolution of the spectral peaks with irradiation time and collection angle demonstrates that the strong coupling of the charged-exciton emission to the leaky modes of the SiN/SiO2 slab waveguide predominantly produces short-wavelength spectral peaks, resulting in multi-peak spectra. We conclude that BOE etching enhances the charged-exciton emission efficiency and its contribution to the total emission compared with the unetched case. BOE etching smoothes the electron confinement potential, thus decreasing the Auger recombination rate. Therefore, the charged-exciton emission efficiency is high, and the charged-exciton-polariton emission can be further enhanced through strong coupling to the leaky mode of the slab waveguide. PMID:25988709
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NASA Technical Reports Server (NTRS)
Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago
2000-01-01
An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.
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NASA Astrophysics Data System (ADS)
Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi
2014-01-01
In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.
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Silicon Mach-Zehnder interferometer racetrack microring for sensing
NASA Astrophysics Data System (ADS)
Xiong, Yule; Ye, Winnie N.
2014-03-01
SOI-based microring resonators (MRRs) have attracted extensive attentions as ultra-compact sensors. Recently, a new structure design combining a ring and a Mach-Zehnder interferometer (MZI) was proposed as sensors for biomedical applications, and as modulators for communications applications. In this design, the MZI uses two identical couplers, where one arm is formed by connecting the access waveguide of the couplers, while the other arm is part of the microring. Such a device may have only one major resonance with a high extinction ratio in a very broad wavelength span (quasi-free spectral range, quasi-FSR), which offers a very large measurement range for sensing applications. 2×2 multimode interference (MMI) couplers are used to couple the microring and the bus waveguides as MMI couplers have broader wavelength responses. We present the first experimental demonstration of the MMI-coupled MZI racetrack microrings for sensing applications. Two types of MMI-coupled MZI racetrack microrings are discussed: one with wire waveguides, and the other using slotted waveguides. For the MZI racetrack microring using wire waveguides, we achieve a quasi-FSR of 34.3 nm near the wavelength of 1520 nm. The corresponding major resonance of the MZI racetrack microring demonstrates a high extinction ratio of ~22.4 dB with a full-width-half-maximum (FWHM) of 1.94 nm, and a quality factor Q of ~800. On the other hand, the quasi-FSR of the MZI racetrack microring with slot waveguides is 23.2 nm near the wavelength of 1540 nm; and the extinction ratio of the major resonance is ~24.5 dB with λFWHM=0.82 nm and Q=~1,900. To demonstrate the uses for sensing applications, we measure the resonance shifts corresponding to the concentration change of the ambient aqueous solutions of sucrose. DI water is used as the reference for calibration to avoid any other variations, e.g. temperature change. Experiments show that the sensitivities of the MZI racetrack microring sensors with wire and slot waveguides are 101.7 nm/RIU and 166.7 nm/RIU, respectively.
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Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka
2014-06-10
We design a GaP/Si composite waveguide to achieve efficient terahertz (THz) wave generation under collinear phase-matched difference frequency mixing (DFM) between near-infrared light sources. This waveguide structure provides a strong mode confinement of both near-infrared sources and THz wave, resulting in an efficient mode overlapping. The numerical results show that the waveguide can produce guided THz wave (5.93 THz) with a power conversion efficiency of 6.6×10(-4) W(-1). This value is larger than previously obtained with the bulk GaP crystal: 0.5×10(-9) W(-1) [J. Lightwave Technol.27, 3057 (2009)]. Our proposed composite waveguide can be achieved by bridging the telecom wavelength and THz frequency region.
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New types of time domain reflectometry sensing waveguides for bridge scour monitoring
NASA Astrophysics Data System (ADS)
Lin, Chih-Ping; Wang, Kai; Chung, Chih-Chung; Weng, Yu-Wen
2017-07-01
Scour is a major threat to bridge safety, especially in harsh fluvial environments. Real-time monitoring of bridge scour is still very limited due to the lack of robust and economic scour monitoring device. Time domain reflectometry (TDR) is an emerging waveguide-based technique holding great promise to develop more durable scour monitoring devices. This study presents new types of TDR sensing waveguides in forms of either sensing rod or sensing wire, taking into account of the measurement range, durability, and ease of field installation. The sensing rod is composed of a hollow grooved steel rod paired up with a metal strip on the insulating groove, while the sensing wire consists of two steel strands with one of them coated with an insulating jacket. The measurement sensitivity is inevitably sacrificed when other properties such as the measurement range, field durability, and installation easiness are enhanced. Factors affecting the measurement sensitivity were identified and experimentally evaluated for better arranging the waveguide conductors. A data reduction method for scour-depth estimation without the need for identifying the sediment/water reflection and a two-step calibration procedure for rating propagation velocities were proposed to work with the new types of TDR sensing waveguides. Both the calibration procedure and the data reduction method were experimentally validated. The test results indicated that the new TDR sensing waveguide provides accurate scour depth measurements regardless of the sacrificed sensitivity. The insulating coating of the new TDR sensing waveguide was also demonstrated to be effective in extending the measurement range up to at least 15 m.
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2013-01-01
GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377
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Silane and Germane Molecular Electronics.
Su, Timothy A; Li, Haixing; Klausen, Rebekka S; Kim, Nathaniel T; Neupane, Madhav; Leighton, James L; Steigerwald, Michael L; Venkataraman, Latha; Nuckolls, Colin
2017-04-18
This Account provides an overview of our recent efforts to uncover the fundamental charge transport properties of Si-Si and Ge-Ge single bonds and introduce useful functions into group 14 molecular wires. We utilize the tools of chemical synthesis and a scanning tunneling microscopy-based break-junction technique to study the mechanism of charge transport in these molecular systems. We evaluated the fundamental ability of silicon, germanium, and carbon molecular wires to transport charge by comparing conductances within families of well-defined structures, the members of which differ only in the number of Si (or Ge or C) atoms in the wire. For each family, this procedure yielded a length-dependent conductance decay parameter, β. Comparison of the different β values demonstrates that Si-Si and Ge-Ge σ bonds are more conductive than the analogous C-C σ bonds. These molecular trends mirror what is seen in the bulk. The conductance decay of Si and Ge-based wires is similar in magnitude to those from π-based molecular wires such as paraphenylenes However, the chemistry of the linkers that attach the molecular wires to the electrodes has a large influence on the resulting β value. For example, Si- and Ge-based wires of many different lengths connected with a methyl-thiomethyl linker give β values of 0.36-0.39 Å -1 , whereas Si- and Ge-based wires connected with aryl-thiomethyl groups give drastically different β values for short and long wires. This observation inspired us to study molecular wires that are composed of both π- and σ-orbitals. The sequence and composition of group 14 atoms in the σ chain modulates the electronic coupling between the π end-groups and dictates the molecular conductance. The conductance behavior originates from the coupling between the subunits, which can be understood by considering periodic trends such as bond length, polarizability, and bond polarity. We found that the same periodic trends determine the electric field-induced breakdown properties of individual Si-Si, Ge-Ge, Si-O, Si-C, and C-C bonds. Building from these studies, we have prepared a system that has two different, alternative conductance pathways. In this wire, we can intentionally break a labile, strained silicon-silicon bond and thereby shunt the current through the secondary conduction pathway. This type of in situ bond-rupture provides a new tool to study single molecule reactions that are induced by electric fields. Moreover, these studies provide guidance for designing dielectric materials as well as molecular devices that require stability under high voltage bias. The fundamental studies on the structure/function relationships of the molecular wires have guided the design of new functional systems based on the Si- and Ge-based wires. For example, we exploited the principle of strain-induced Lewis acidity from reaction chemistry to design a single molecule switch that can be controllably switched between two conductive states by varying the distance between the tip and substrate electrodes. We found that the strain intrinsic to the disilaacenaphthene scaffold also creates two state conductance switching. Finally, we demonstrate the first example of a stereoelectronic conductance switch, and we demonstrate that the switching relies crucially on the electronic delocalization in Si-Si and Ge-Ge wire backbones. These studies illustrate the untapped potential in using Si- and Ge-based wires to design and control charge transport at the nanoscale and to allow quantum mechanics to be used as a tool to design ultraminiaturized switches.
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Midinfrared wavelength conversion in hydrogenated amorphous silicon waveguides
NASA Astrophysics Data System (ADS)
Wang, Jiang; Wang, Zhaolu; Huang, Nan; Han, Jing; Li, Yongfang; Liu, Hongjun
2017-10-01
Midinfrared (MIR) wavelength conversion based on degenerate four-wave mixing is theoretically investigated in hydrogenated amorphous silicon (a-Si:H) waveguides. The broadband phase mismatch is achieved in the normal group-velocity dispersion regime. The conversion bandwidth is extended to 900 nm, and conversion efficiency of up to -14 dB with a pump power of 70 mW in a 2-mm long a-Si:H rib waveguides is obtained. This low-power on-chip wavelength converter will have potential for application in a wide range of MIR nonlinear optic devices.
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NASA Astrophysics Data System (ADS)
Wu, Linghui; Bihari, Bipin; Gan, Jianhua; Chen, Ray T.; Tang, Suning
1998-08-01
Si-CMOS compatible polymer-based waveguides for optoelectronic interconnects and packaging have been fabricated and characterized. A 1-to-48 fanout optoelectronic interconnection layer (OIL) structure based on Ultradel 9120/9020 for the high-speed massive clock signal distribution for a Cray T-90 supercomputer board has been constructed. The OIL employs multimode polymeric channel waveguides in conjunction with surface-normal waveguide output coupler and 1-to-2 splitter. A total insertion loss of 7.98 dB at 850 nm was measured experimentally.
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Ge-rich graded-index Si1-xGex devices for MID-IR integrated photonics
NASA Astrophysics Data System (ADS)
Ramirez, J. M.; Vakarin, V.; Liu, Q.; Frigerio, J.; Ballabio, A.; Le Roux, X.; Benedikovic, D.; Alonso-Ramos, C.; Isella, G.; Vivien, L.; Marris-Morini, D.
2018-02-01
Mid-infrared (mid-IR) silicon photonics is becoming a prominent research with remarkable potential in several applications such as in early medical diagnosis, safe communications, imaging, food safety and many more. In the quest for the best material platform to develop new photonic systems, Si and Ge depart with a notable advantage over other materials due to the high processing maturity accomplished during the last part of the 20th century through the deployment of the CMOS technology. From an optical viewpoint, combining Si with Ge to obtain SiGe alloys with controlled stoichiometry is also of interest for the photonic community since permits to increase the effective refractive index and the nonlinear parameter, providing a fascinating playground to exploit nonlinear effects. Furthermore, using Ge-rich SiGe gives access to a range of deep mid-IR wavelengths otherwise inaccessible (λ 2-20 μm). In this paper, we explore for the first time the limits of this approach by measuring the spectral loss characteristic over a broadband wavelength range spanning from λ = 5.5 μm to 8.5 μm. Three different SiGe waveguide platforms are compared, each one showing higher compactness than the preceding through the engineering of the vertical Ge profile, giving rise to different confinement characteristics to the propagating modes. A flat propagation loss characteristic of 2-3 dB/cm over the entire wavelength span is demonstrated in Ge-rich graded-index SiGe waveguides of only 6 μm thick. Also, the role of the overlap fraction of the confined optical mode with the Si-rich area at the bottom side of the epitaxial SiGe waveguide is put in perspective, revealing a lossy characteristic compared to the other designs were the optical mode is located in the Ge-rich area at the top of the waveguide uniquely. These Ge-rich graded-index SiGe waveguides may pave the way towards a new generation of photonic integrated circuits operating at deep mid-IR wavelengths.
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Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.
Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S
2017-07-10
We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.
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NASA Technical Reports Server (NTRS)
Ponchak, George E.; Itotia, Isaac K.; Drayton, Rhonda Franklin
2003-01-01
Measured and modeled propagation characteristics of Finite Ground Coplanar (FGC) waveguide fabricated on a 15 ohm-cm Si substrate with a 23 micron thick, 68% porous Si layer and a 20 micron thick polyimide interface layer are presented for the first time. Attenuation and effective permittivity as function of the FGC geometry and the bias between the center conductor and the ground planes are presented. It is shown that the porous Si reduces the attenuation by 1 dB/cm compared to FGC lines with only polyimide interface layers, and the polyimide on porous silicon demonstrates negligible bias dependence.
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Ultra-Low Loss Waveguides with Application to Photonic Integrated Circuits
NASA Astrophysics Data System (ADS)
Bauters, Jared F.
The integration of photonic components using a planar platform promises advantages in cost, size, weight, and power consumption for optoelectronic systems. Yet, the typical propagation loss of 5-10 dB/m in a planar silica waveguide is nearly five orders-of-magnitude larger than that in low loss optical fibers. For some applications, the miniaturization of the photonic system and resulting smaller propagation lengths from integration are enough to overcome the increase in propagation loss. For other more demanding systems or applications, such as those requiring long optical time delays or high-quality-factor (Q factor) resonators, the high propagation loss can degrade system performance to a degree that trumps the potential advantages offered by integration. Thus, the reduction of planar waveguide propagation loss in a Si3-N4 based waveguide platform is a primary focus of this dissertation. The ultra-low loss stoichiometric Si3-N4 waveguide platform offers the additional advantages of fabrication process stability and repeatability. Yet, active devices such as lasers, amplifiers, and photodetectors have not been monolithically integrated with ultra-low loss waveguides due to the incompatibility of the active and ultra-low loss processing thermal budgets (ultra-low loss waveguides are annealed at temperatures exceeding 1000 °C in order to drive out impurities). So a platform that enables the integration of active devices with the ultra-low losses of the Si3- N4 waveguide platform is this dissertation's second focus. The work enables the future fabrication of sensor, gyroscope, true time delay, and low phase noise oscillator photonic integrated circuits.
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Folded Coplanar Waveguide Slot Antenna on Silicon Substrates With a Polyimide Interface Layer
NASA Technical Reports Server (NTRS)
Bacon, Andrew; Ponchak, George E.; Papapolymerou, John; Bushyager, Nathan; Tentzeris, Manos; Williams, W. D. (Technical Monitor)
2002-01-01
A novel mm-wave Coplanar Waveguide (CPW) folded slot antenna is characterized on low-resistivity Si substrate (1 omega-cm) and a high resistivity Si substrate with a polyimide interface layer for the first time. The antenna resonates around 30 GHz with a return loss greater than 14.6 dB. Measured radiation patterns indicate the existence of a main lobe, but the radiation pattern is affected by a strong surface wave mode, which is greater in the high resistivity Si wafer.
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NASA Astrophysics Data System (ADS)
Guo, Pengfei; Shen, Xia; Zhang, Baolong; Sun, Haibin; Zou, Zhijun; Yang, Wenchao; Gong, Ke; Luo, Yongsong
2018-05-01
A simple two-step CVD method is developed to realize the growth of high-quality tin-catalyzed CdSSe alloy nanowires. Microstructural characterizations demonstrate that these wires are high-quality crystalline nanostructures. Local photoluminescence investigation of these nanostructures shows a typical band edge emission at 656 nm with a full-width at half-maximum of 22.3 nm. Optical waveguide measurement along an individual nanowire indicates that the output signal of the guided light has a rapid linear decrease accompanied with maximum red-shift about 109 meV after the transmission of 102 μm. This obvious red-shift is caused by the intensive band-tail absorption during the optical transmission process. Moreover, optically pumped nanolasers are successfully realized at room temperature based on these unique wires, further demonstrating the achievement of stimulated emission from spontaneous emission, promoted by the pump power intensity. This work may find a simple route to the manufacture of superior nanowires for applications in waveguide and integrated photonic devices.
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Guo, Pengfei; Shen, Xia; Zhang, Baolong; Sun, Haibin; Zou, Zhijun; Yang, Wenchao; Gong, Ke; Luo, Yongsong
2018-05-04
A simple two-step CVD method is developed to realize the growth of high-quality tin-catalyzed CdSSe alloy nanowires. Microstructural characterizations demonstrate that these wires are high-quality crystalline nanostructures. Local photoluminescence investigation of these nanostructures shows a typical band edge emission at 656 nm with a full-width at half-maximum of 22.3 nm. Optical waveguide measurement along an individual nanowire indicates that the output signal of the guided light has a rapid linear decrease accompanied with maximum red-shift about 109 meV after the transmission of 102 μm. This obvious red-shift is caused by the intensive band-tail absorption during the optical transmission process. Moreover, optically pumped nanolasers are successfully realized at room temperature based on these unique wires, further demonstrating the achievement of stimulated emission from spontaneous emission, promoted by the pump power intensity. This work may find a simple route to the manufacture of superior nanowires for applications in waveguide and integrated photonic devices.
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Universal behavior of surface-dangling bonds in hydrogen-terminated Si, Ge, and Si/Ge nanowires.
NASA Astrophysics Data System (ADS)
Nunes, Ricardo; Kagimura, Ricardo; Chacham, Hélio
2007-03-01
We report an ab initio study of the electronic properties of surface dangling bond (SDB) states in hydrogen-terminated Si, Ge, and Si/Ge nanowires with diameters between 1 and 2 nm. We find that the charge transition levels ɛ(+/-) of SDB states are deep in the bandgap for Si wires, and shallow (near the valence band edge) for Ge wires. In both Si and Ge wires, the SDB states are localized. We also find that the SDB ɛ(+/-) levels behave as a ``universal" energy reference level among Si, Ge, and Si/Ge wires within a precision of 0.1 eV. By computing the average bewteen the electron affinity and ionization energy in the atomi limit of several atoms from the III, IV and V columns, we conjecture that the universality is a periodic-table atomic property.
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Bend-imitating models of abruptly bent electron waveguides
NASA Astrophysics Data System (ADS)
Vakhnenko, Oleksiy O.
2011-07-01
The fundamentals of bend-imitating approach regarding the one-electron quantum mechanics in abruptly bent ideal electron waveguides are given. In general, the theory allows to model each particular circularlike bend of a continuous quantum wire as some effective multichannel scatterer being pointlike in longitudinal direction. Its scattering ability is determined by the bending angle, mean bending radius, lateral coordinate (or coordinates) in wire cross section, time (or electronic energy), and possibly by the applied magnetic field. In an equivalent formulation, the theory gives rise to rather simple matching rules for the electron wave function and its longitudinal derivative affecting only the straight parts of a wire and thereby permitting to bypass a detailed quantum mechanical consideration of elbow domains. The proposed technique is applicable for the analytical investigation of spectral and transport electronic properties related to the ideal abruptly bent 3D wirelike structures of fixed cross section and is adaptable to the 2D wirelike structures as well as to the wirelike structures subjected to the magnetic field perpendicular to the plane of wire bending. In the framework of bend-imitating approach, the investigation of electron scattering in a singly bent 2D quantum wire and a doubly bent 2D quantum wire with S-like bend has been made and the explicit dependences of transmission and reflection coefficients on geometrical parameters of respective structure as well as on electron energy have been obtained. The total suppression of mixing between the scattering channels of S-like bent quantum wire is predicted.
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Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing
2011-08-23
We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society
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Vapor-liquid-solid growth of silicon and silicon germanium nanowires
NASA Astrophysics Data System (ADS)
Nimmatoori, Pramod
2009-12-01
Si and Si1-xGex nanowires are promising materials with potential applications in various disciplines of science and technology. Small diameter nanowires can act as model systems to study interesting phenomena such as tunneling that occur in the nanometer regime. Furthermore, technical challenges in fabricating nanoscale size devices from thin films have resulted in interest and research on nanowires. In this perspective, vertical integrated nanowire field effect transistors (VINFETs) fabricated from Si nanowires are promising devices that offer better control on device properties and push the transistor architecture into the third dimension potentially enabling ultra-high transistor density circuits. Transistors fabricated from Si/Si 1-xGex nanowires have also been proposed that can have high carrier mobility. In addition, the Si and Si1-xGe x nanowires have potential to be used in various applications such as sensing, thermoelectrics and solar cells. Despite having considerable potential, the understanding of the vapor-liquid-solid (VLS) mechanism utilized to fabricate these wires is still rudimentary. Hence, the objective of this thesis is to understand the effects of nanoscale size and the role of catalyst that mediates the wire growth on the growth rate of Si and Si1-xGe x nanowires and interfacial abruptness in Si/Si1-xGe x axial heterostructure nanowires. Initially, the growth and structural properties of Si nanowires with tight diameter distribution grown from 10, 20 and 50 nm Au particles dispersed on a polymer-modified substrate was studied. A nanoparticle application process was developed to disperse Au particles on the substrate surface with negligible agglomeration and sufficient density. The growth temperature and SiH4 partial pressure were varied to optimize the growth conditions amenable to VLS growth with smooth wire morphology and negligible Si thin film deposition on wire sidewalls. The Si nanowire growth rate was studied as a function of growth time, temperature, SiH4 partial pressure and wire diameter and discussed in the context of the literature. The wire growth rate was found to increase with wire diameter in agreement with a size-related effect known as the Gibbs-Thomson effect. Subsequently, the effect of P and Sb doping on the growth rate and structural properties of Si nanowires was investigated. A reduction in wire growth rate was observed upon doping, which was pronounced in case of Sb doping, ascribable to P/Sb segregation at the vapor-liquid interface (catalyst surface) and the liquid-solid interface (growth front) that in turn reduces Si incorporation at these interfaces. The second part of thesis was focused on the Si1-xGe x alloy nanowires. The effect of wire diameter and growth conditions on the interfacial abruptness of Si/Si1-xGex heterostructure nanowires was examined. Abrupt interfaces were obtained at smaller wire diameters. However, the growth temperature wasn't found to have much impact on the interfacial abruptness. These results were explained in terms of catalyst effects on the interfacial abruptness. The remaining part of the study was focused on the effect of growth conditions on the growth rate of Si1-x Gex nanowires. It was found that the Si incorporation mechanism was different between Si and Si1-xGex nanowire growth which was ascribed to changes in the gas phase or catalyst composition that can impact the SiH4 decomposition kinetics at the catalyst surface (vapor-liquid interface) and/or Si incorporation at the growth front (liquid-solid interface).
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Preparation, mechanical strengths, and thermal
NASA Astrophysics Data System (ADS)
Inoue, A.; Furukawa, S.; Hagiwara, M.; Masumoto, T.
1987-05-01
Ni-based amorphous wires with good bending ductility have been prepared for Ni75Si8B17 and Ni78P12B10 alloys containing 1 to 2 at. pct Al or Zr by melt spinning in rotating water. The enhancement of the wire-formation tendency by the addition of Al has been clarified to be due to the increase in the stability of the melt jet through the formation of a thin A12O3 film on the outer surface. The maximum wire diameter is about 190 to 200 μm for the Ni-Si (or P)-B-Al alloys and increases to about 250 μm for the Ni-Si-B-Al-Cr alloys containing 4 to 6 at. pct Cr. The tensile fracture strength and fracture elongation are 2730 MPa and 2.9 pct for (Ni0.75Si0.08B0.17 99Al1) wire and 2170 MPa and 2.4 pct for (Ni0.78P0.12B0.1)99Al1 wire. These wires exhibit a fatigue limit under dynamic bending strain in air with a relative humidity of 65 pct; this limit is 0.50 pct for a Ni-Si-B-Al wire, which is higher by 0.15 pct than that of a Fe75Si10B15 amorphous wire. Furthermore, the Ni-base wires do not fracture during a 180-deg bending even for a sample annealed at temperatures just below the crystallization temperature, in sharp contrast to high embrittlement tendency for Fe-base amorphous alloys. Thus, the Ni-based amorphous wires have been shown to be an attractive material similar to Fe- and Co-based amorphous wires because of its high static and dynamic strength, high ductility, high stability to thermal embrittlement, and good corrosion resistance.
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NASA Astrophysics Data System (ADS)
Nakama, Kenichi; Tokiwa, Yuu; Mikami, Osamu
2010-09-01
Intra-board interconnection between optical waveguide channels is suitable for assembling high-speed optoelectronic printed wiring boards (OE-PWB). Here, we propose a novel optical interconnection method combining techniques for both wavelength-based optical waveguide addressing and plug-in optical waveguide alignment with a micro-hole array (MHA). This array was fabricated by the mask transfer method. For waveguide addressing, we used a micro passive wavelength selector (MPWS) module, which is a type of Littrow mount monochromator consisting of an optical diffraction grating, a focusing lens, and the MHA. From the experimental results, we found that the wavelength addressing operation of the MPWS module was effective for intra-board optical interconnection.
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Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology
NASA Astrophysics Data System (ADS)
Ogudo, Kingsley A.; Snyman, Lukas W.; Polleux, Jean-Luc; Viana, Carlos; Tegegne, Zerihun
2014-06-01
Si Avalanche based LEDs technology has been developed in the 650 -850nm wavelength regime [1, 2]. Correspondingly, small micro-dimensioned detectors with pW/μm2 sensitivity have been developed for the same wavelength range utilizing Si-Ge detector technology with detection efficiencies of up to 0.85, and with a transition frequencies of up to 80 GHz [3] A series of on-chip optical links of 50 micron length, utilizing 650 - 850 nm propagation wavelength have been designed and realized, utilizing a Si Ge radio frequency bipolar process. Micron dimensioned optical sources, waveguides and detectors were all integrated on the same chip to form a complete optical link on-chip. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art Si-Ge bipolar detector technologies were used as key design strategies. Best performances show optical coupling from source to detector of up to 10GHz and - 40dBm total optical link budget loss with a potential transition frequency coupling of up to 40GHz utilizing Si Ge based LEDs. The technology is particularly suitable for application as on-chip optical links, optical MEMS and MOEMS, as well as for optical interconnects utilizing low loss, side surface, waveguide- to-optical fiber coupling. Most particularly is one of our designed waveguide which have a good core axis alignment with the optical source and yield 10GHz -30dB on-chip micro-optical links as shown in Fig 9 (c). The technology as developed has been appropriately IP protected.
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Wire Array Solar Cells: Fabrication and Photoelectrochemical Studies
NASA Astrophysics Data System (ADS)
Spurgeon, Joshua Michael
Despite demand for clean energy to reduce our addiction to fossil fuels, the price of these technologies relative to oil and coal has prevented their widespread implementation. Solar energy has enormous potential as a carbon-free resource but is several times the cost of coal-produced electricity, largely because photovoltaics of practical efficiency require high-quality, pure semiconductor materials. To produce current in a planar junction solar cell, an electron or hole generated deep within the material must travel all the way to the junction without recombining. Radial junction, wire array solar cells, however, have the potential to decouple the directions of light absorption and charge-carrier collection so that a semiconductor with a minority-carrier diffusion length shorter than its absorption depth (i.e., a lower quality, potentially cheaper material) can effectively produce current. The axial dimension of the wires is long enough for sufficient optical absorption while the charge-carriers are collected along the shorter radial dimension in a massively parallel array. This thesis explores the wire array solar cell design by developing potentially low-cost fabrication methods and investigating the energy-conversion properties of the arrays in photoelectrochemical cells. The concept was initially investigated with Cd(Se, Te) rod arrays; however, Si was the primary focus of wire array research because its semiconductor properties make low-quality Si an ideal candidate for improvement in a radial geometry. Fabrication routes for Si wire arrays were explored, including the vapor-liquid-solid growth of wires using SiCl4. Uniform, vertically aligned Si wires were demonstrated in a process that permits control of the wire radius, length, and spacing. A technique was developed to transfer these wire arrays into a low-cost, flexible polymer film, and grow multiple subsequent arrays using a single Si(111) substrate. Photoelectrochemical measurements on Si wire array/polymer composite films showed that their energy-conversion properties were comparable to those of an array attached to the growth substrate. High quantum efficiencies were observed relative to the packing density of the wires, particularly with illumination at high angles of incidence. The results indicate that an inexpensive, solid-state Si wire array solar cell is possible, and a plan is presented to develop one.
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Fan, Yu; Zhang, Qing; Lu, Congxiang; Xiao, Qizhen; Wang, Xinghui; Tay, Beng Kang
2013-02-21
Core-shell Si nanowires are very promising anode materials. Here, we synthesize vertically aligned carbon nanotubes (CNTs) with relatively large diameters and large inter-wire spacing as core wires and demonstrate a CNT-Si core-shell wire composite as a lithium ion battery (LIB) anode. Owing to the rationally engineered core structure, the composite shows good capacity retention and rate performance. The excellent performance is superior to most core-shell nanowires previously reported.
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Ultrapure glass optical waveguide: Development in microgravity by the sol gel process
NASA Technical Reports Server (NTRS)
Mukherjee, S. P.; Debsikdar, J. C.; Beam, T.
1983-01-01
The sol-gel process for the preparation of homogeneous gels in three binary oxide systems was investigated. The glass forming ability of certain compositions in the selected oxide systems (SiO-GeO2, GeO2-PbO, and SiO2-TiO2) were studied based on their potential importance in the design of optical waveguide at longer wavelengths.
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NASA Astrophysics Data System (ADS)
Sharma, Tarun Kumar; Ranganath, Praveen; Nambiar, Siddharth; Selvaraja, Shankar Kumar
2018-03-01
A horizontally asymmetric transverse magnetic (TM) pass polarizer is presented. The device passes only TM mode and rejects transverse electric (TE) mode. The proposed device has an asymmetricity in the horizontal direction comprising a direction coupler region with a silicon waveguide, silicon nitride waveguide, and an air gap, all residing on silica. Between three equal width Si waveguides, we have one region filled with air and the other with SiN with unequal optimized widths. The device with its optimal dimensions yields an extremely low insertion loss (IL) of 0.16 dB for TM→TM, while TE is rejected by an IL of >48 dB. The proposed polarizer is operated between C&L bands with a high extinction ratio and broadband width of about 110 nm.
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Novel spot size converter for coupling standard single mode fibers to SOI waveguides
NASA Astrophysics Data System (ADS)
Sisto, Marco Michele; Fisette, Bruno; Paultre, Jacques-Edmond; Paquet, Alex; Desroches, Yan
2016-03-01
We have designed and numerically simulated a novel spot size converter for coupling standard single mode fibers with 10.4μm mode field diameter to 500nm × 220nm SOI waveguides. Simulations based on the eigenmode expansion method show a coupling loss of 0.4dB at 1550nm for the TE mode at perfect alignment. The alignment tolerance on the plane normal to the fiber axis is evaluated at +/-2.2μm for <=1dB excess loss, which is comparable to the alignment tolerance between two butt-coupled standard single mode fibers. The converter is based on a cross-like arrangement of SiOxNy waveguides immersed in a 12μm-thick SiO2 cladding region deposited on top of the SOI chip. The waveguides are designed to collectively support a single degenerate mode for TE and TM polarizations. This guided mode features a large overlap to the LP01 mode of standard telecom fibers. Along the spot size converter length (450μm), the mode is first gradually confined in a single SiOxNy waveguide by tapering its width. Then, the mode is adiabatically coupled to a SOI waveguide underneath the structure through a SOI inverted taper. The shapes of SiOxNy and SOI tapers are optimized to minimize coupling loss and structure length, and to ensure adiabatic mode evolution along the structure, thus improving the design robustness to fabrication process errors. A tolerance analysis based on conservative microfabrication capabilities suggests that coupling loss penalty from fabrication errors can be maintained below 0.3dB. The proposed spot size converter is fully compliant to industry standard microfabrication processes available at INO.
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Synthesis and Characterization of Germanium Dioxide - Dioxide Waveguides
NASA Astrophysics Data System (ADS)
Chen, Din-Guo
The increasing use of single mode fibers in local -area networks (LAN) and customer premises networks (CPN) will increase the need for passive optical components, such as branching devices, mixers, etc. Integrated optical devices are potentially ideal for these applications, provided that they can be made compatible with single mode fibers. The use of GeO_2 as the core dopant and SiO_2 as the substrate ensures that these waveguides will have virtually identical characteristics to single mode fibers. Additionally, glasses in the form of waveguides have recently been used to study various nonlinear optical phenomena, which provide great potential applications such as data storage and information processing. The present study has for the first time demonstrated the feasibility of employing both sol-gel multiple dip -coating and low pressure chemical vapor deposition (LPCVD) in the production of GeO_2-SiO _2 waveguiding films with various germania contents. The thin film characteristics were studied by various analytical techniques (e.g. ellipsometry, waveguiding Raman spectroscopy, FTIR, XPS, SEM/TEM, etc.). The composition dependence of the linear refractive index of GeO _2-SiO_2 films follows that predicted by the Lorenz-Lorenz model. Vibrational spectroscopy revealed the existence of Si-O-Ge linkages in GeO_2-SiO_2 glass network. The addition of GeO_2 in SiO_2 caused a decrease in the size of both the D1 and D2 defect bands in the SiO _2 Raman spectra. The structure of the LPCVD film appears to be dominated by D1 and D2 defect bands. Using a three-prism loss measurement technique, the propagation losses were found to be 3.31 dB/cm and 2.59dB/cm for sol-gel and LPCVD films, respectively. These losses are attributed to various scattering processes in the films. The mode indices of the waveguide were measured using a prism coupling technique. The measured mode indices were found to agree with the calculated value based upon a step-index profile assumption. The theoretical electromagnetic field distribution profiles for a step-index planar waveguide has been calculated and compared to the experimentally measured mode profiles using a near field technique. The nonlinear refractive indices of the sol-gel films (GeO_2-SiO_2 and GeO_2-TiO_2 ) were measured using a THG interferometry fringe technique. The relation between n_{ rm 2THG} and n_1 was found to follow that predicted by the empirical BGO model. An additive model was used to calculate the linear refractive indices, Abbe numbers, and n_1 dispersion curves of the films.
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NASA Astrophysics Data System (ADS)
Alqadami, Abdulrahman Shueai Mohsen; Jamlos, Mohd Faizal; Soh, Ping Jack; Rahim, Sharul Kamal Abdul; Narbudowicz, Adam
2017-01-01
A compact coplanar waveguide-fed multiple-input multiple-output antenna array based on the left-handed wire loaded spiral resonators (SR) is presented. The proposed antenna consists of a 2 × 2 wire SR with two symmetrical microstrip feed lines, each line exciting a 1 × 2 wire SR. Left-handed metamaterial unit cells are placed on its reverse side and arranged in a 2 × 3 array. A reflection coefficient of less than -16 dB and mutual coupling of less than -28 dB are achieved at 5.15 GHz WLAN band.
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Zhu, Shiyang; Lo, G Q; Kwong, D L
2012-07-02
Ultracompact Cu-capped Si hybrid plasmonic waveguide-ring resonators (WRRs) with ring radii of 1.09-2.59 μm are fabricated on silicon on insulator substrates using standard complementary metal-oxide-semiconductor technology and characterized over the telecom wavelength range of 1.52-1.62 μm. The dependence of the spectral characteristics on the key structural parameters such as the Si core width, the ring radius, the separation gap between the ring and bus waveguides, and the ring configuration is systematically studied. A WRR with 2.59-μm radius and 0.250-μm nominal gap exhibits good performances such as normalized insertion loss of ~0.1 dB, extinction ratio of ~12.8 dB, free spectral range of ~47 nm, and quality factor of ~275. The resonance wavelength is redshifted by ~4.6 nm and an extinction ratio of ~7.5 dB is achieved with temperature increasing from 27 to 82°C. The corresponding effective thermo-optical coefficient (dn(g)/dT) is estimated to be ~1.6 × 10(-4) K(-1), which is contributed by the thermo-optical effect of both the Si core and the Cu cap, as revealed by numerical simulations. Combined with the compact size and the high thermal conductivity of Cu, various effective thermo-optical devices based on these Cu-capped plasmonic WRRs could be realized for seamless integration in existing Si electronic-photonic integrated circuits.
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Synchronized Re-Entrant Flux Reversal of Multiple FeSiB Amorphous Wires Having the Larger Output
NASA Astrophysics Data System (ADS)
Takajo, Minoru; Yamasaki, Jiro
Technique to synchronize the re-entrant flux reversal of the multiple magnetostrictive Fe77.5Si7.5B15 amorphous wires was developed using a flux keeper of amorphous ribbons contacted to the wire ends. It is comprehended that the characteristics of the re-entrant flux takes place respectively at almost the same time in the three Fe-Si-B amorphous wires with a diameter of 65, 95μm. This phenomenon can be explained by considering the strong magnetic coupling of wires and amorphous ribbon by stray field from the each wire ends. As a result, the magnitude of the induced voltage in the sense coil is increased in proportion to the multiplication of the number of the wires.
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NASA Astrophysics Data System (ADS)
Qiu, Fei; Xu, Zhimou
2009-08-01
In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.
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Observation of an optical event horizon in a silicon-on-insulator photonic wire waveguide.
Ciret, Charles; Leo, François; Kuyken, Bart; Roelkens, Gunther; Gorza, Simon-Pierre
2016-01-11
We report on the first experimental observation of an optical analogue of an event horizon in integrated nanophotonic waveguides, through the reflection of a continuous wave on an intense pulse. The experiment is performed in a dispersion-engineered silicon-on-insulator waveguide. In this medium, solitons do not suffer from Raman induced self-frequency shift as in silica fibers, a feature that is interesting for potential applications of optical event horizons. As shown by simulations, this also allows the observation of multiple reflections at the same time on fundamental solitons ejected by soliton fission.
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Ultra-low-loss and broadband mode converters in Si3N4 technology
NASA Astrophysics Data System (ADS)
Mu, Jinfeng; Dijkstra, Meindert; de Goede, Michiel; Yong, Yean-Sheng; García-Blanco, Sonia M.
2017-02-01
Si3N4 grown by low pressure chemical vapor deposition (LPCVD) on thermally oxidized silicon wafers is largely utilized for creating integrated photonic devices due to its ultra-low propagation loss and large transparency window (400 nm to 2350 nm). In this paper, an ultra-low-loss and broadband mode converter for monolithic integration of different materials onto the passive Si3N4 photonic technology platform is presented. The mode size converter is constructed with a vertically tapered Si3N4 waveguide that is then buried by a polymer or an Al2O3 waveguide. The influence of the various design parameters on the converter characteristics are investigated. Optimal designs are proposed, in which the thickness of the Si3N4 waveguide is tapered from 200 nm to 40 nm. The calculated losses of the mode converters at 976 nm and 1550 nm wavelengths are well below 0.1 dB for the Si3N4-polymer coupler and below 0.3 dB for the Si3N4-Al2O3 coupler. The preliminary experimental results show good agreement with the design values, indicating that the mode converters can be utilized for the low-loss integration of different materials.
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Amorphous silicon as high index photonic material
NASA Astrophysics Data System (ADS)
Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.
2009-05-01
Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.
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Nanoscale plasmonic waveguides for filtering and demultiplexing devices
NASA Astrophysics Data System (ADS)
Akjouj, A.; Noual, A.; Pennec, Y.; Bjafari-Rouhani, B.
2010-05-01
Numerical simulations, based on a FDTD (finite-difference-time-domain) method, of infrared light propagation for add/drop filtering in two-dimensional (2D) Ag-SiO2-Ag resonators are reported to design 2D Y-bent plasmonic waveguides with possible applications in telecommunication WDM (wavelength demultiplexing). First, we study optical transmission and reflection of a nanoscale SiO2 waveguide coupled to a nanocavity of the same insulator located either inside or on the side of a linear waveguide sandwiched between Ag. According to the inside or outside positioning of the nanocavity with respect to the waveguide, the transmission spectrum displays peaks or dips, respectively, which occur at the same central frequency. A fundamental study of the possible cavity modes in the near-infrared frequency band is also given. These filtering properties are then exploited to propose a nanoscale demultiplexer based on a Y-shaped plasmonic waveguide for separation of two different wavelengths, in selection or rejection, from an input broadband signal around 1550 nm. We detail coupling of the 2D add/drop Y connector to two cavities inserted on each of its branches.
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NASA Astrophysics Data System (ADS)
Choowitsakunlert, Salinee; Takagiwa, Kenji; Kobashigawa, Takuya; Hosoya, Nariaki; Silapunt, Rardchawadee; Yokoi, Hideki
2018-05-01
A photosensitive adhesive bonding process for a magnetooptic waveguide for an optical isolator employing a nonreciprocal guided-radiation mode conversion is investigated at 1.55 µm. The magnetooptic waveguide is a straight rib type, and it is fabricated by bonding the Si guiding layer to a magnetic garnet. In the fabrication process, an adhesive material is diluted to obtain a certain thickness before depositing on a silicon-on-insulator (SOI) substrate. The relationship between the percent dilution ratio and the thickness of the adhesive layer is considered. The smallest gap thickness is found to be 0.66 µm at a dilution ratio of 2%.
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Ultrasensitive spectroscopy based on photonic waveguides on Al2O3/SiO2 platform
NASA Astrophysics Data System (ADS)
Heidari, Elham; Xu, Xiaochuan; Tang, Naimei; Mokhtari-Koushyar, Farzad; Dalir, Hamed; Chen, Ray T.
2018-02-01
Here a photonic waveguide on Al2O3/SiO2 platform is proposed to cover the 240 320 nm wavelength-range, which is of paramount significance in protein and nuclei acid quantification. Our optical waveguide increases path-length and overlap integration for light-matter interaction with proteins. The proposed system detects one order less proteins concentration as low as 12.5 μg/ml compared with NanoDropTM that detects <125 μg/ml. Also, a linear absorbance change up to protein concentration of 7500 μg/ml is experimentally attained which is based on the Beer-Lambert-law.
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Fiber-Drawn Metamaterial for THz Waveguiding and Imaging
NASA Astrophysics Data System (ADS)
Atakaramians, Shaghik; Stefani, Alessio; Li, Haisu; Habib, Md. Samiul; Hayashi, Juliano Grigoleto; Tuniz, Alessandro; Tang, Xiaoli; Anthony, Jessienta; Lwin, Richard; Argyros, Alexander; Fleming, Simon C.; Kuhlmey, Boris T.
2017-09-01
In this paper, we review the work of our group in fabricating metamaterials for terahertz (THz) applications by fiber drawing. We discuss the fabrication technique and the structures that can be obtained before focusing on two particular applications of terahertz metamaterials, i.e., waveguiding and sub-diffraction imaging. We show the experimental demonstration of THz radiation guidance through hollow core waveguides with metamaterial cladding, where substantial improvements were realized compared to conventional hollow core waveguides, such as reduction of size, greater flexibility, increased single-mode operating regime, and guiding due to magnetic and electric resonances. We also report recent and new experimental work on near- and far-field THz imaging using wire array metamaterials that are capable of resolving features as small as λ/28.
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Teng, Jie; Dumon, Pieter; Bogaerts, Wim; Zhang, Hongbo; Jian, Xigao; Han, Xiuyou; Zhao, Mingshan; Morthier, Geert; Baets, Roel
2009-08-17
Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding. (c) 2009 Optical Society of America
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NASA Astrophysics Data System (ADS)
Hui, Zhanqiang; Zhang, Lingxuan; Zhang, Wenfu
2018-01-01
A silicon nitride (Si3N4)-based reverse strip/slot hybrid waveguide with single vertical silica slot is proposed to acquire extremely low and flat chromatic dispersion profile. This is achieved by design and optimization of the geometrical structural parameters of the reverse hybrid waveguide. The flat dispersion varying between ±10 ps/(nm.km) is obtained over 610 nm bandwidth. Both the effective area and nonlinear coefficient of the waveguide across the entire spectral range of interest are investigated. This led to design of an on-chip supercontinuum (SC) source with -30 dB bandwidth of 2996 nm covering from 1.209 to 4.205 μm. Furthermore, we discuss the output signal spectral and temporal characteristic as a function of the pump power. Our waveguide design offers a CMOS compatible, low-cost/high yield (no photolithography or lift-off processes are necessary) on-chip SC source for near- and mid-infrared nonlinear applications.
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Mid-infrared materials and devices on a Si platform for optical sensing
Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M
2014-01-01
In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641
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SPM local oxidation nanolithography with active control of cantilever dynamics
NASA Astrophysics Data System (ADS)
Nishimura, S.; Takemura, Y.; Shirakashi, J.
2007-04-01
Local oxidation nanolithography using scanning probe microscope (SPM) has enabled us to fabricate nanometer-scale oxide wires on material surfaces. Here, we study tapping mode SPM local oxidation experiments for silicon by controlling the dynamic properties of the cantilever. Dependence of feature size of fabricated oxide wires on the amplitude of the cantilever was precisely investigated. The quality factor (Q) was fixed at a natural value of ~500. By enhancing the amplitude of the cantilever, both width and height of fabricated Si oxide wires were decreased. With the variation of the amplitude of the cantilever from 0.5 V to 3.0 V (DC voltage = 22.5 V, scanning speed = 20 nm/s), the feature size of Si oxide wires was well controlled, ranging from 40 nm to 18 nm in width and 2.3 nm to 0.6 nm in height. Standard deviation of width on Si oxide wires formed by tapping mode SPM is around 2.0 nm, which is smaller than that of contact mode Si oxide wires. Furthermore, the variation of the oscillation amplitude of the cantilever does not affect the size uniformity of the wires. These results imply that the SPM local oxidation nanolithography with active control of cantilever dynamics is a useful technique for producing higher controllability on the nanometer-scale fabrication of Si oxide wires.
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Precision Laser Annealing of Focal Plane Arrays
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bender, Daniel A.; DeRose, Christopher; Starbuck, Andrew Lea
2015-09-01
We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing windowmore » over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.« less
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Low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-infrared applications.
Cho, Sang-Yeon; Soref, Richard A
2009-06-15
We report low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-IR applications. The composite modes in silicide ribbon waveguides offer a low-loss and highly confined mode profile, giving excellent plasmon waveguiding for long-wavelength applications. The calculated propagation loss of the composite long-range surface-plasmon polariton mode at a wavelength of 100 microm is 2.18 dB/cm with a mode height of less than 30 microm. The results presented provide important design guidelines for silicide/Si plasmon waveguides.
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2015-11-25
1 Dielectric coating thermal stabilization during GaAs-based laser fabrication for improved device yield 1 Michael K. Connors a, c), Jamal...side contact metal, underlying SiO2 dielectric coating, and semiconductor surface. A thermal-anneal procedure developed for the fabrication of GaAs...slab coupled optical waveguide (SCOW) ridge waveguide devices stabilizes the SiO2 dielectric coating, by means of outgassing and stress reduction
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Thermo-optic coefficient and nonlinear refractive index of silicon oxynitride waveguides
NASA Astrophysics Data System (ADS)
Trenti, A.; Borghi, M.; Biasi, S.; Ghulinyan, M.; Ramiro-Manzano, F.; Pucker, G.; Pavesi, L.
2018-02-01
Integrated waveguiding devices based on silicon oxynitride (SiON) are appealing for their relatively high refractive index contrast and broadband transparency. The lack of two photon absorption at telecom wavelengths and the possibility to fabricate low loss waveguides make SiON an ideal platform for on-chip nonlinear optics and for the realization of reconfigurable integrated quantum lightwave circuits. Despite this, very few studies on its linear and nonlinear optical properties have been reported so far. In this work, we measured the thermo-optic coefficient dn/dT and the nonlinear refractive index n2 of relatively high (n ˜ 1.83 at a wavelength of 1.55 μm) refractive index SiON by using racetrack resonators. These parameters have been determined to be d/n d T =(1.84 ±0.17 ) × 10-5 K-1 and n2 = (7 ± 1) × 10-16 cm2W-1.
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High frequency magnetostrictive transducers for waveguide applications
DOE Office of Scientific and Technical Information (OSTI.GOV)
Daw, Joshua Earl; Taylor, Steven Cheney; Rempe, Joy Lynn
A high frequency magnetostrictive transducer includes a magnetostrictive rod or wire inserted co-axially into a driving coil, wherein the driving coil includes a coil arrangement with a plurality of small coil segments along the magnetostrictive rod or wire; wherein frequency operation of the high frequency magnetostrictive transducer is controlled by a length of the small coil segments and a material type of the magnetostrictive rod or wire. This design of the high frequency magnetostrictive transducer retains the beneficial aspects of the magnetostrictive design, while reducing its primary drawback, lower frequency operation.
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Novel devices and systems for terahertz spectroscopy and imaging
NASA Astrophysics Data System (ADS)
Wang, Kanglin
This doctoral thesis documents my research on novel devices and systems for terahertz (THz) spectroscopy and imaging. The research is particularly focused on the manipulation of THz radiation, including subwavelength concentration and low-loss wave guiding. One of the major obstacles for THz imaging is the poor spatial resolution due to the diffraction of the long-wavelength light source. To break this restriction, we build a THz near-field microscopy system by combining apertureless near-field scanning optical microscopy (ANSOM) with terahertz time-domain spectroscopy (THz-TDS). The experimental result indicates a sub-wavelength spatial resolution of about 10 micron. Abnormal frequency response of the ANSOM probe tip is observed, and a dipole antenna model is developed to explain the bandwidth reduction of the detected THz pulses. We also observe and characterize the THz wave propagation on the near-field probe in ANSOM. These studies not only demonstrate the feasibility of ANSOM in the THz frequency range, but also provide fundamental insights into the near-field microscopy in general, such as the broadband compatibility, the propagation effects and the antenna effects. Motivated by our study of the propagation effects in THz ANSOM, we characterize the guided mode of THz pulses on a bare metal wire by directly measuring the spatial profile of electric field of the mode, and find that the wire structure can be used to guide THz waves with outstanding performance. This new broadband THz waveguide exhibits very small dispersion, extremely low attenuation and remarkable structural simplicity. These features make it especially suitable for use in THz sensing and imaging systems. The first THz endoscope is demonstrated based on metal wire waveguides. To improve the input coupling efficiency of such waveguides, we develop a photoconductive antenna with radial symmetry which can generate radially polarized THz radiation matching the waveguide mode. Through THz-TDS measurements and theoretical calculations, we study the dispersion relation of the surface waves on metal wires, which indicates the increasing importance of skin effects for surface waves in the THz frequency range.
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Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev
2016-06-25
In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)-gallium nitride (GaN) slot waveguide structure is presented-to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530-1565 nm) into four output ports with low insertion losses (0.07 dB).
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Smooth bridge between guided waves and spoof surface plasmon polaritons.
Liu, Liangliang; Li, Zhuo; Gu, Changqing; Xu, Bingzheng; Ning, Pingping; Chen, Chen; Yan, Jian; Niu, Zhenyi; Zhao, Yongjiu
2015-04-15
In this work, we build a smooth bridge between a coaxial waveguide and a plasmonic waveguide with subwavelength periodically cylindrical radial grooves, to realize high-efficiency mode conversion between conventional guided waves and spoof surface plasmon polaritons in broadband. This bridge consists of a flaring coaxial waveguide connected with a metal cylindrical wire corrugated with subwavelength gradient radial grooves. Experimental results of the transmission and reflection coefficients show excellent agreement with the numerical simulations. The proposed scheme can be extended readily to other bands and the bridge structure can find potential applications in the integration of conventional microwave or terahertz devices with plasmonic circuits.
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Weak-guidance-theory review of dispersion and birefringence management by laser inscription
NASA Astrophysics Data System (ADS)
Zheltikov, A. M.; Reid, D. T.
2008-01-01
A brief review of laser inscription of micro- and nanophotonic structures in transparent materials is provided in terms of a compact and convenient formalism based on the theory of weak optical waveguides. We derive physically instructive approximate expressions allowing propagation constants of laser-inscribed micro- and nanowaveguides to be calculated as functions of the transverse waveguide size, refractive index step, and dielectric properties of the host material. Based on this analysis, we demonstrate that dispersion engineering capabilities of laser micromachining techniques are limited by the smallness of the refractive index step typical of laser-inscribed structures. However, a laser inscription of waveguides in pre-formed micro- and nanostructures suggests a variety of interesting options for a fine dispersion and birefringence tuning of small-size waveguides and photonic wires.
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Alpha Radiation Effects on Silicon Oxynitride Waveguides
DOE Office of Scientific and Technical Information (OSTI.GOV)
Morichetti, Francesco; Grillanda, Stefano; Manandhar, Sandeep
2016-09-21
Photonic technologies are today of great interest for use in harsh environments, such as outer space, where they can potentially replace current communication systems based on radiofrequency components. However, very much alike to electronic devices, the behavior of optical materials and circuits can be strongly altered by high-energy and high-dose ionizing radiations. Here, we investigate the effects of alpha () radiation with MeV-range energy on silicon oxynitride (SiON) optical waveguides. Irradiation with a dose of 5×1015 cm-2 increases the refractive index of the SiON core by nearly 10-2, twice as much that of the surrounding silica cladding, leading to amore » significant increase of the refractive index contrast of the waveguide. The higher mode confinement induced by -radiation reduces the loss of tightly bent waveguides. We show that this increases the quality factor of microring resonators by 20%, with values larger than 105 after irradiation.« less
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Novel analytical approach for strongly coupled waveguide arrays
NASA Astrophysics Data System (ADS)
Kohli, Niharika; Srivastava, Sangeeta; Sharma, Enakshi K.
2018-02-01
Coupled Mode theory and Variational methods are the most extensively used analytical methods for the study of coupled optical waveguides. In this paper we have discussed a variation of the Ritz Galerkin Variational method (RGVM) wherein the trial field is a superposition of an orthogonal basis set which in turn is generated from superposition of the individual waveguide modal fields using Gram Schmidt Orthogonalization Procedure (GSOP). The conventional coupled mode theory (CCMT), a modified coupled mode theory (MCMT) incorporating interaction terms that are neglected in CCMT, and an RGVM using orthogonal basis set (RG-GSOP) are compared for waveguide arrays of different materials. The exact effective indices values for these planar waveguide arrays are also studied. The different materials have their index-contrasts ranging between the GaAs/ AlGaAs system to Si/SiO2 system. It has been shown that the error in the effective indices values obtained from MCMT and CCMT is higher than RGVM-GSOP especially in the case of higher index-contrast. Therefore, for accurate calculations of the modal characteristics of planar waveguide arrays, even at higher index-contrasts, RGVM-GSOP is the best choice. Moreover, we obtain obviously orthogonal supermode fields and Hermitian matrix from RGVM-GSOP.
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Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides
NASA Astrophysics Data System (ADS)
Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua
2016-03-01
Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.
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Hard and flexible optical printed circuit board
NASA Astrophysics Data System (ADS)
Lee, El-Hang; Lee, Hyun Sik; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.
2007-02-01
We report on the design and fabrication of hard and flexible optical printed circuit boards (O-PCBs). The objective is to realize generic and application-specific O-PCBs, either in hard form or flexible form, that are compact, light-weight, low-energy, high-speed, intelligent, and environmentally friendly, for low-cost and high-volume universal applications. The O-PCBs consist of 2-dimensional planar arrays of micro/nano-scale optical wires, circuits and devices that are interconnected and integrated to perform the functions of sensing, storing, transporting, processing, switching, routing and distributing optical signals on flat modular boards. For fabrication, the polymer and organic optical wires and waveguides are first fabricated on a board and are used to interconnect and integrate micro/nano-scale photonic devices. The micro/nano-optical functional devices include lasers, detectors, switches, sensors, directional couplers, multi-mode interference devices, ring-resonators, photonic crystal devices, plasmonic devices, and quantum devices. For flexible boards, the optical waveguide arrays are fabricated on flexible poly-ethylen terephthalate (PET) substrates by UV embossing. Electrical layer carrying VCSEL and PD array is laminated with the optical layer carrying waveguide arrays. Both hard and flexible electrical lines are replaced with high speed optical interconnection between chips over four waveguide channels up to 10Gbps on each. We discuss uses of hard or flexible O-PCBs for telecommunication systems, computer systems, transportation systems, space/avionic systems, and bio-sensor systems.
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NASA Astrophysics Data System (ADS)
Olivares, Irene; Angelova, Todora I.; Pinilla-Cienfuegos, Elena; Sanchis, Pablo
2016-05-01
The electro-optic Pockels effect may be generated in silicon photonics structures by breaking the crystal symmetry by means of a highly stressing cladding layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. In this work, the influence of the waveguide parameters on the strain distribution and its overlap with the optical mode to enhance the Pockels effect has been analyzed. The optimum waveguide structure have been designed based on the definition and quantification of a figure of merit. The fabrication of highly stressing SiN layers by PECVD has also been optimized to characterize the designed structures. The residual stress has been controlled during the growth process by analyzing the influence of the main deposition parameters. Therefore, two identical samples with low and high stress conditions were fabricated and electro-optically characterized to test the induced Pockels effect and the influence of carrier effects. Electro-optical modulation was only measured in the sample with the high stressing SiN layer that could be attributed to the Pockels effect. Nevertheless, the influence of carriers were also observed thus making necessary additional experiments to decouple both effects.
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Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching
NASA Astrophysics Data System (ADS)
Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi
2016-11-01
We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.
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NASA Astrophysics Data System (ADS)
Lee, Jongmin; Eichenfield, Matt; Douglas, Erica; Mudrick, John; Biedermann, Grant; Jau, Yuan-Yu
2017-04-01
Trapping neutral atoms in the evanescent fields generated by microfabricated nano-waveguides will provide a new platform for neutral atom quantum controls via strong atom-photon interactions. At Sandia National Labs, we are aiming at developing the related technology that can enable the efficient optical coupling to the waveguide at multiple wavelengths, fabrication nano-waveguides to handle required optical power, more robust waveguide structure, and the new fabrication geometry to facilitate the cold-atom experiments. We will report our latest results on the related subjects. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
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Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors
NASA Technical Reports Server (NTRS)
Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.
2015-01-01
We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.
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High Aspect Ratio Semiconductor Heterojunction Solar Cells
DOE Office of Scientific and Technical Information (OSTI.GOV)
Redwing, Joan; Mallouk, Tom; Mayer, Theresa
2013-05-17
The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematicmore » and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (V oc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion lengths. Furthermore, we made significant advances in employing the bottom-up vapor-liquid-solid (VLS) growth technique for the fabrication of the Si wire arrays. Our work elucidated the effects of growth conditions and substrate pattern geometry on the growth of large area Si microwire arrays grown with SiCl4. In addition, we also developed a process to grow p-type Si nanowire arrays using aluminum as the catalyst metal instead of gold. Finally, our work demonstrated the feasibility of growing vertical arrays of Si wires on non-crystalline glass substrates using polycrystalline Si template layers. The accomplishments demonstrated in this project will pave the way for future advances in radial junction wire array solar cells.« less
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Direct-patterned optical waveguides on amorphous silicon films
Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan
2005-08-02
An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.
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Porcel, Marco A G; Schepers, Florian; Epping, Jörn P; Hellwig, Tim; Hoekman, Marcel; Heideman, René G; van der Slot, Peter J M; Lee, Chris J; Schmidt, Robert; Bratschitsch, Rudolf; Fallnich, Carsten; Boller, Klaus-J
2017-01-23
We demonstrate supercontinuum generation in stoichiometric silicon nitride (Si3N4 in SiO2) integrated optical waveguides, pumped at telecommunication wavelengths. The pump laser is a mode-locked erbium fiber laser at a wavelength of 1.56 µm with a pulse duration of 120 fs. With a waveguide-internal pulse energy of 1.4 nJ and a waveguide with 1.0 µm × 0.9 µm cross section, designed for anomalous dispersion across the 1500 nm telecommunication range, the output spectrum extends from the visible, at around 526 nm, up to the mid-infrared, at least to 2.6 µm, the instrumental limit of our detection. This output spans more than 2.2 octaves (454 THz at the -30 dB level). The measured output spectra agree well with theoretical modeling based on the generalized nonlinear Schrödinger equation. The infrared part of the supercontinuum spectra shifts progressively towards the mid-infrared, well beyond 2.6 µm, by increasing the width of the waveguides.
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Quantum dot rolled-up microtube optoelectronic integrated circuit.
Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab
2013-05-15
A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.
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Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev
2016-01-01
In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)–gallium nitride (GaN) slot waveguide structure is presented—to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530–1565 nm) into four output ports with low insertion losses (0.07 dB). PMID:28773638
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SiN-assisted polarization-insensitive multicore fiber to silicon photonics interface
NASA Astrophysics Data System (ADS)
Poulopoulos, Giannis N.; Kalavrouziotis, Dimitrios; Mitchell, Paul; Macdonald, John R.; Bakopoulos, Paraskevas; Avramopoulos, Hercules
2015-06-01
We demonstrate a polarization-insensitive coupler interfacing multicore-fiber (MCF) to silicon waveguides. It comprises a 3D glass fanout transforming the circular MCF core-arrangement to linear and performing initial tapering, followed by a Spot-Size-Converter on the silicon chip. Glass waveguides are formed of multiple overlapped modification elements and appropriate offsetting thereof yields tapers with symmetric cross-section. The Spot-Size-Converter is an inverselytapered silicon waveguide with a tapered polymer overcladding where light is initially coupled, whereas phase-matching gradually shifts it towards the silicon core. Co-design of the glass fanout and Spot-Size-Converter obtains theoretical loss below 1dB for the overall Si-to-MCF transition in both polarizations.
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Distributed temperature sensing using a SPIRAL configuration ultrasonic waveguide
NASA Astrophysics Data System (ADS)
Periyannan, Suresh; Balasubramaniam, Krishnan
2017-02-01
Distributed temperature sensing has important applications in the long term monitoring of critical enclosures such as containment vessels, flue gas stacks, furnaces, underground storage tanks and buildings for fire risk. This paper presents novel techniques for such measurements, using wire in a spiral configuration and having special embodiments such a notch for obtaining wave reflections from desired locations. Transduction is performed using commercially available Piezo-electric crystal that is bonded to one end of the waveguide. Lower order axisymmetric guided ultrasonic modes were employed. Time of fight (TOF) differences between predefined reflectors located on the waveguides are used to infer temperature profile in a chamber with different temperatures. The L(0,1) wave mode (pulse echo approach) was generated/received in a spiral waveguide at different temperatures for this work. The ultrasonic measurements were compared with commercially available thermocouples.
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Investigation of Hydrophobic Radomes for Microwave Landing System.
1982-11-01
horizontal heating wires on the inside surface, and 2) a slotted waveguide unit (C-band waveguide, about 2 feet in length) covered with a Teflon shrink tube ...AZ) Fiberglass flat 1.5ft x 13ft NE sandwich (EL) Teflon shrink 1 in x 2 ft SW tubing (Field Mon.) 7 (8) Hydrophobic Coating for Antenna Weather...SURFACE PREPARATION 13 24 Mar Conolite Primer: Vellox S-048 Finish: Microfine FSD, 7 coats, sprayed 14 24 Mar Conolite Teflon film, C-TAPE-36
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Static strain tuning of quantum dots embedded in a photonic wire
NASA Astrophysics Data System (ADS)
Tumanov, D.; Vaish, N.; Nguyen, H. A.; Curé, Y.; Gérard, J.-M.; Claudon, J.; Donatini, F.; Poizat, J.-Ph.
2018-03-01
We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 25 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance.
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Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G
NASA Astrophysics Data System (ADS)
Taniguchi, Tomoya; Hirowatari, Anna; Ikeda, Takeshi; Fukuyama, Masataka; Amemiya, Yoshiteru; Kuroda, Akio; Yokoyama, Shin
2016-04-01
Biosensors using ring resonators with silicon nitride (SiN) slot waveguides have been fabricated. The temperature coefficient of the resonance wavelength of the SiN resonator is 0.006 nm/°C, which is one order of magnitude smaller than that of Si. The sensitivity of the biosensor has been improved by using slot waveguide together with Si-binding protein (designated as Si-tag), which bonds to SiN or SiO2 surface, as an anchoring molecule to immobilize bioreceptors on the SiN rings in an oriented manner. Furthermore, the protein G, which strongly bonds to many kinds of mammalian antibodies only by mixing the antibody solution, is used to efficiently immobilize the antigen on the sensor surface. By means of these devises the sensitivity of the biosensor has been improved by factor of 10-100 compared with that of normal Si ring resonator sensors without slot. Then the detection of prostate specific antigen (PSA) with the sensitivity of ~1×10-8 g/ml, which is the concentration of strongly suspicious for the prostate cancer, has been achieved.
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NASA Astrophysics Data System (ADS)
Zoepfl, D.; Muppalla, P. R.; Schneider, C. M. F.; Kasemann, S.; Partel, S.; Kirchmair, G.
2017-08-01
Here we present the microwave characterization of microstrip resonators, made from aluminum and niobium, inside a 3D microwave waveguide. In the low temperature, low power limit internal quality factors of up to one million were reached. We found a good agreement to models predicting conductive losses and losses to two level systems for increasing temperature. The setup presented here is appealing for testing materials and structures, as it is free of wire bonds and offers a well controlled microwave environment. In combination with transmon qubits, these resonators serve as a building block for a novel circuit QED architecture inside a rectangular waveguide.
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Optical sensor in planar configuration based on multimode interference
NASA Astrophysics Data System (ADS)
Blahut, Marek
2017-08-01
In the paper a numerical analysis of optical sensors based on multimode interference in planar one-dimensional step-index configuration is presented. The structure consists in single-mode input and output waveguides and multimode waveguide which guide only few modes. Material parameters discussed refer to a SU8 polymer waveguide on SiO2 substrate. The optical system described will be designed to the analysis of biological substances.
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Silicon Oxycarbide Waveguides for Photonic Applications
NASA Astrophysics Data System (ADS)
Memon, Faisal Ahmed; Morichetti, Francesco; Melloni, Andrea
2018-01-01
Silicon oxycarbide thin films deposited with rf reactive magnetron sputtering a SiC target are exploited to demonstrate photonic waveguides with a high refractive index of 1.82 yielding an index contrast of 18% with silica glass. The propagation losses of the photonic waveguides are measured at the telecom wavelength of 1.55 μm by cut-back technique. The results demonstrate the potential of silicon oxycarbide for photonic applications.
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Monolithic coupling of a SU8 waveguide to a silicon photodiode
NASA Astrophysics Data System (ADS)
Nathan, M.; Levy, O.; Goldfarb, I.; Ruzin, A.
2003-12-01
We present quantitative results of light coupling from SU8 waveguides into silicon p-n photodiodes in monolithically integrated structures. Multimode, 12 μm thick, and 20 μm wide SU8 waveguides were fabricated to overlap 40×180 μm2 photodiodes, with three different waveguide-photodiode overlap lengths. The attenuation due to leaky-mode coupling in the overlap area was then calculated from photocurrent measurements. The overlap attenuation ranged from a minimum of 2.2 dB per mm overlap length to a maximum of about 3 dB/mm, comparing favorably with reported nonpolymeric waveguide-Si photodiode attenuations.
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Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides
NASA Astrophysics Data System (ADS)
Ghosh, Subhabrata; N, Shivakiran Bhaktha B.
2016-03-01
We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.
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Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.
Zhu, Shiyang; Lo, G Q; Kwong, D L
2013-04-08
An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.
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Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications
NASA Astrophysics Data System (ADS)
Kumari, Sulakshna; Gustavsson, Johan S.; Wang, Ruijun; Haglund, Emanuel P.; Westbergh, Petter; Sanchez, Dorian; Haglund, Erik; Haglund, Åsa; Bengtsson, Jörgen; Le Thomas, Nicolas; Roelkens, Gunther; Larsson, Anders; Baets, Roel
2015-02-01
We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (<99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG's influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm-1).
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Experimental analysis of silicon oxycarbide thin films and waveguides
NASA Astrophysics Data System (ADS)
Memon, Faisal Ahmed; Morichetti, Francesco; Somaschini, Claudio; Iseni, Giosue; Melloni, Andrea
2017-05-01
Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO2/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300- 1600 nm. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10-4 in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 +/- 0.05 dB/mm for TE and 0.41 +/- 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.
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Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths
NASA Astrophysics Data System (ADS)
Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.
2013-05-01
In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.
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On-Chip Waveguide Coupling of a Layered Semiconductor Single-Photon Source.
Tonndorf, Philipp; Del Pozo-Zamudio, Osvaldo; Gruhler, Nico; Kern, Johannes; Schmidt, Robert; Dmitriev, Alexander I; Bakhtinov, Anatoly P; Tartakovskii, Alexander I; Pernice, Wolfram; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf
2017-09-13
Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on Si 3 N 4 rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the Si 3 N 4 waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.
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NASA Astrophysics Data System (ADS)
Shimizu, Hiromasa; Shimodaira, Takahiro
2018-04-01
We report on magnetoplasmonic Si waveguides with a ferromagnetic Fe/conductive metal Au multilayer for realizing a sizable magnetooptic effect with a low propagation loss for integrated optical isolators. By combining the ferromagnetic metal Fe with a highly conductive Au layer, the largest nonreciprocal differences in effective index were estimated for propagation lengths of 1-20 µm. Mode analysis with and without a Au layer clarified that the insertion of a Au layer on an Fe layer improves the optical confinement in the Fe layer with reduced propagation loss and is effective in enlarging the magnetooptic effect for the same propagation length. On the basis of the optimized Fe/Au multilayer structure, we designed waveguide optical isolators based on nonreciprocal coupling by the finite difference time domain (FDTD) method. We estimated an optical isolation of 10.8 dB with a forward insertion loss of 13.4 dB in a 34-µm-long nonreciprocal directional coupler.
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Long range mid-infrared propagation in Si and Ge hybrid plasmonic-photonic nano-ribbon waveguides.
Liang, Haibo; Soref, Richard; Mu, Jianwei; Li, Xun; Huang, Wei-Ping
2014-11-17
We have investigated a hybrid plasmonic-photonic mode in Si and Ge channel waveguides over the 1.55-8.0 μm wavelength range. A 10-nm Cu ribbon was buried midway within a Si₃N₄ "photonic slot" centered in the semiconductor strip. For the TMo mode, propagation lengths L of several millimeters are predicted for a waveguide cross-section of about 0.7λ/n x 0.7λ/n which offers optical confinement mainly within the ~λ²/400-area slot. The L increased strongly with λ. For 0.4λ/n x 0.4λ/n channels, we found multi-centimeter propagation, but there ~60% of the propagating energy had leaked out into the thick, all-around Si₃N₄ cladding.
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Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion.
Iizuka, Norio; Yoshida, Haruhiko; Managaki, Nobuto; Shimizu, Toshimasa; Hassanet, Sodabanlu; Cumtornkittikul, Chiyasit; Sugiyama, Masakazu; Nakano, Yoshiaki
2009-12-07
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size converter, the absorption saturation of 5 dB is achieved with a pulse energy of 25 pJ. The switch is integrated with a SiN/AlN waveguide and spot-size converters, and the structure provides the possibility of an integration of the switch with other functional devices. To further improve the coupling loss between the waveguide and the switch, triangular-shaped converters are investigated, demonstrating losses as low as 2 dB/facet.
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NASA Astrophysics Data System (ADS)
Samanta, Swagata; Dey, Pradip Kumar; Banerji, Pallab; Ganguly, Pranabendu
2017-01-01
A study regarding the validity of effective-index based matrix method (EIMM) for the fabricated SU-8 channel waveguides is reported. The design method is extremely fast compared to other existing numerical techniques, such as, BPM and FDTD. In EIMM, the effective index method was applied in depth direction of the waveguide and the resulted lateral index profile was analyzed by a transfer matrix method. By EIMM one can compute the guided mode propagation constants and mode profiles for each mode for any dimensions of the waveguides. The technique may also be used to design single mode waveguide. SU-8 waveguide fabrication was carried out by continuous-wave direct laser writing process at 375 nm wavelength. The measured propagation losses of these wire waveguides having air and PDMS as superstrates were 0.51 dB/mm and 0.3 dB/mm respectively. The number of guided modes, obtained theoretically as well as experimentally, for air-cladded waveguide was much more than that of PDMS-cladded waveguide. We were able to excite the isolated fundamental mode for the later by precise fiber positioning, and mode image was recorded. The mode profiles, mode indices, and refractive index profiles were extracted from this mode image of the fundamental mode which matched remarkably well with the theoretical predictions.
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Surface characteristics and damage distributions of diamond wire sawn wafers for silicon solar cells
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sopori, Bhushan; Devayajanam, Srinivas; Basnyat, Prakash
2016-01-01
This paper describes surface characteristics, in terms of its morphology, roughness and near-surface damage of Si wafers cut by diamond wire sawing (DWS) of Si ingots under different cutting conditions. Diamond wire sawn Si wafers exhibit nearly-periodic surface features of different spatial wavelengths, which correspond to kinematics of various movements during wafering, such as ingot feed, wire reciprocation, and wire snap. The surface damage occurs in the form of frozen-in dislocations, phase changes, and microcracks. The in-depth damage was determined by conventional methods such as TEM, SEM and angle-polishing/defect-etching. However, because these methods only provide local information, we have alsomore » applied a new technique that determines average damage depth over a large area. This technique uses sequential measurement of the minority carrier lifetime after etching thin layers from the surfaces. The lateral spatial damage variations, which seem to be mainly related to wire reciprocation process, were observed by photoluminescence and minority carrier lifetime mapping. Our results show a strong correlation of damage depth on the diamond grit size and wire usage.« less
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Slot-waveguide biochemical sensor.
Barrios, Carlos A; Gylfason, Kristinn B; Sánchez, Benito; Griol, Amadeu; Sohlström, H; Holgado, M; Casquel, R
2007-11-01
We report an experimental demonstration of an integrated biochemical sensor based on a slot-waveguide microring resonator. The microresonator is fabricated on a Si3N4-SiO2 platform and operates at a wavelength of 1.3 microm. The transmission spectrum of the sensor is measured with different ambient refractive indices ranging from n=1.33 to 1.42. A linear shift of the resonant wavelength with increasing ambient refractive index of 212 nm/refractive index units (RIU) is observed. The sensor detects a minimal refractive index variation of 2x10(-4) RIU.
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Label-free optical biosensing with slot-waveguides.
Barrios, Carlos A; Bañuls, María José; González-Pedro, Victoria; Gylfason, Kristinn B; Sánchez, Benito; Griol, Amadeu; Maquieira, A; Sohlström, H; Holgado, M; Casquel, R
2008-04-01
We demonstrate label-free molecule detection by using an integrated biosensor based on a Si(3)N(4)/SiO(2) slot-waveguide microring resonator. Bovine serum albumin (BSA) and anti-BSA molecular binding events on the sensor surface are monitored through the measurement of resonant wavelength shifts with varying biomolecule concentrations. The biosensor exhibited sensitivities of 1.8 and 3.2 nm/(ng/mm(2)) for the detection of anti-BSA and BSA, respectively. The estimated detection limits are 28 and 16 pg/mm(2) for anti-BSA and BSA, respectively, limited by wavelength resolution.
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Li, Jian; Kirkwood, Robert A; Baker, Luke J; Bosworth, David; Erotokritou, Kleanthis; Banerjee, Archan; Heath, Robert M; Natarajan, Chandra M; Barber, Zoe H; Sorel, Marc; Hadfield, Robert H
2016-06-27
We present low temperature nano-optical characterization of a silicon-on-insulator (SOI) waveguide integrated SNSPD. The SNSPD is fabricated from an amorphous Mo83Si17 thin film chosen to give excellent substrate conformity. At 350 mK, the SNSPD exhibits a uniform photoresponse under perpendicular illumination, corresponding to a maximum system detection efficiency of approximately 5% at 1550 nm wavelength. Under these conditions 10 Hz dark count rate and 51 ps full width at half maximum (FWHM) timing jitter is observed.
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Li, Shuangming; Wan, Ying; Fan, Chunhai; Su, Yan
2017-03-22
Love wave sensors have been widely used for sensing applications. In this work, we introduce the theoretical analysis of the monolayer and double-layer waveguide Love wave sensors. The velocity, particle displacement and energy distribution of Love waves were analyzed. Using the variations of the energy repartition, the sensitivity coefficients of Love wave sensors were calculated. To achieve a higher sensitivity coefficient, a thin gold layer was added as the second waveguide on top of the silicon dioxide (SiO₂) waveguide-based, 36 degree-rotated, Y-cut, X-propagating lithium tantalate (36° YX LiTaO₃) Love wave sensor. The Love wave velocity was significantly reduced by the added gold layer, and the flow of wave energy into the waveguide layer from the substrate was enhanced. By using the double-layer structure, almost a 72-fold enhancement in the sensitivity coefficient was achieved compared to the monolayer structure. Additionally, the thickness of the SiO₂ layer was also reduced with the application of the gold layer, resulting in easier device fabrication. This study allows for the possibility of designing and realizing robust Love wave sensors with high sensitivity and a low limit of detection.
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Ishigure, Takaaki; Nitta, Yosuke
2010-06-21
We successfully fabricate a polymer optical waveguide with multiple graded-index (GI) cores directly on a substrate utilizing the soft-lithography method. A UV-curable polymer (TPIR-202) supplied from Tokyo Ohka Kogyo Co., Ltd. is used, and the GI cores are formed during the curing process of the core region, which is similar to the preform process we previously reported. We experimentally confirm that near parabolic refractive index profiles are formed in the parallel cores (more than 50 channels) with 40 microm x 40 microm size at 250-microm pitch. Although the loss is still as high as 0.1 approximately 0.3 dB/cm at 850 nm, which is mainly due to scattering loss inherent to the polymer matrix, the scattering loss attributed to the waveguide's structural irregularity could be sufficiently reduced by a graded refractive index profile. For comparison, we fabricate step-index (SI)-core waveguides with the same materials by means of the same process. Then, we evaluate the inter-channel crosstalk in the SI- and GI-core waveguides under almost the same conditions. It is noteworthy that remarkable crosstalk reduction (5 dB and beyond) is confirmed in the GI-core waveguides, since the propagating modes in GI-cores are tightly confined near the core center and less optical power is found near the core cladding boundary. This significant improvement in the inter-channel crosstalk allows the GI-core waveguides to be utilized for extra high-density on-board optical interconnections.
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Highly sensitive biochemical sensor utilizing Bragg grating in submicron Si/SiO2 waveguides
NASA Astrophysics Data System (ADS)
Tripathi, Saurabh Mani; Kumar, Arun; Meunier, Jean-Pierre; Marin, Emmanuel
2009-05-01
We present a novel highly sensitive biochemical sensor based on a Bragg grating written in the cladding region of a submicron planar Si/SiO2 waveguide. Owing to the high refractive index contrast at the Si/SiO2 boundary the TM modal power is relatively high in low refractive index sensing region, leading to higher sensitivity in this configuration [1]. Waveguide parameters have been optimized to obtain maximum modal power in the sensing region (PSe) and an optimum core width corresponding to maximum sensitivity is found to exist while operating in TM mode configuration, as has been shown in Fig. 1. It has been found that operating in TM mode configuration at optimum core width the structure exhibits extremely high sensitivity, ~ 5×10-6 RIU - 1.35×10-6 RIU for the ambient refractive indices between 1.33 - 1.63. Such high sensitivities are typically attainable for Surface Plasmon Polariton (SPP) based biosensors and is much higher than any non SPP based sensors. Being free from any metallic layer or bulky prism the structure is easy to realize. Owing to its simple structure and small dimensions the proposed sensor can be integrated with planar lightwave circuits and could be used in handy lab-on-a-chip devices. The device may find application in highly sensitive biological/chemical sensing areas in civil and defense sectors where analyzing the samples at the point of need is required rather than sending it to some centralized laboratory.
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NASA Astrophysics Data System (ADS)
Noual, A.; Akjouj, A.; Pennec, Y.; Gillet, J.-N.; Djafari-Rouhani, B.
2009-10-01
Numerical simulations, based on a finite-difference-time-domain (FDTD) method, of infrared light propagation for add/drop filtering in two-dimensional (2D) metal-insulator-metal (Ag-SiO2-Ag) resonators are reported to design 2D Y-bent plasmonic waveguides with possible applications in telecommunication wavelength demultiplexing (WDM). First, we study optical transmission and reflection of a nanoscale SiO2 waveguide coupled to a nanocavity of the same insulator located either inside or on the side of a linear waveguide sandwiched between Ag. According to the inside or outside positioning of the nanocavity with respect to the waveguide, the transmission spectrum displays peaks or dips, respectively, which occur at the same central frequency. A fundamental study of the possible cavity modes in the near-infrared frequency band is also given. These filtering properties are then exploited to propose a nanoscale demultiplexer based on a Y-shaped plasmonic waveguide for separation of two different wavelengths, in selection or rejection, from an input broadband signal around 1550 nm. We detail coupling of the 2D add/drop Y connector to two cavities inserted on each of its branches. Selection or rejection of a pair of different wavelengths depends on the inside or outside locations (respectively) of each cavity in the Y plasmonic device.
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NASA Astrophysics Data System (ADS)
Geng, Yu
With the increase of clock speed and wiring density in integrated circuits, inter-chip and intra-chip interconnects through conventional electrical wires encounter increasing difficulties because of the large power loss and bandwidth limitation. Optical interconnects have been proposed as an alternative to copper-based interconnects and are under intense study due to their large data capacity, high data quality and low power consumption. III-V compound semiconductors offer high intrinsic electron mobility, small effective electron mass and direct bandgap, which make this material system advantageous for high-speed optoelectronic devices. The integration of III-V optoelectronic devices on Si substrates will provide the combined advantage of a high level of integration and large volume production of Si-based electronic circuitry with the superior electrical and optical performance of III-V components, paving the way to a new generation of hybrid integrated circuits. In this thesis, the direct heteroepitaxy of photodetectors (PDs) and light emitters using metal-organic chemical vapor deposition for the integration of photonic devices on Si substrates were studied. First we studied the selective-area growth of InP/GaAs on patterned Si substrates for PDs. To overcome the loading effect, a multi-temperature composite growth technique for GaAs was developed. By decreasing various defects such as dislocations and anti-phase domains, the GaAs and InP buffer layers are with good crystalline quality and the PDs show high speed and low dark current performance both at the edge and center of the large growth well. Then the growth and fabrication of GaAs/AlGaAs QW lasers were studied. Ellipsometry was used to calibrate the Al composition of AlGaAs. Thick p and n type AlGaAs with a mirrorlike surface were grown by high V/III ratio and high temperature. The GaAs/AlGaAs broad area QW laser was successfully grown and fabricated on GaAs substrate and showed a pulsed lasing result with a threshold current density of about 800 A/cm2. For the integration of lasers on Si substrate, quantum dot (QD) lasers were studied. A flow-and-stop process of TBA was used to grow InAs QDs with the in-situ monitor EpiRas. QDs with a PL wavelength of ˜1.3 mum were grown on GaAs and Si substrates. To decrease the PL degradation problem caused by the contaminations from AlGaAs, an InGaAs insertion layer was inserted in between the AlGaAs and QDs region. Microdisk and a-Si waveguide lasers are designed and fabricated.
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Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics
Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; Pomerene, Andrew T.; Starbuck, Andrew L.; Lentine, Anthony L.; Stenger, Vincent; Mookherjea, Shayan
2016-01-01
We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost. PMID:26927022
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Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics.
Weigel, Peter O; Savanier, Marc; DeRose, Christopher T; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan
2016-03-01
We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.
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Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard
2015-06-01
Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.
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Distributed temperature sensors development using an stepped-helical ultrasonic waveguide
NASA Astrophysics Data System (ADS)
Periyannan, Suresh; Rajagopal, Prabhu; Balasubramaniam, Krishnan
2018-04-01
This paper presents the design and development of the distributed ultrasonic waveguide temperature sensors using some stepped-helical structures. Distributed sensing has several applications in various industries (oil, glass, steel) for measurement of physical parameters such as level, temperature, viscosity, etc. This waveguide incorporates a special notch or bend for obtaining ultrasonic wave reflections from the desired locations (Gage-lengths) where local measurements are desired. In this paper, a multi-location measurement wave-guide, with a measurement capability of 18 locations in a single wire, has been fabricated. The distribution of these sensors is both in the axial as well as radial directions using a stepped-helical spring configuration. Also, different high temperature materials have been chosen for the wave-guide. Both lower order axi-symmetric guided ultrasonic modes (L(0,1) and T(0,1)) were employed. These wave modes were generated/received (pulse-echo approach) using conventional longitudinal and shear transducers, respectively. Also, both the wave modes were simultaneously generated/received and compared using shear transducer for developing the distributed helical wave-guide sensors. The effect of dispersion of the wave modes due to curvature effects will also be discussed.
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Smooth and flat phase-locked Kerr frequency comb generation by higher order mode suppression
Huang, S.-W.; Liu, H.; Yang, J.; Yu, M.; Kwong, D.-L.; Wong, C. W.
2016-01-01
High-Q microresonator is perceived as a promising platform for optical frequency comb generation, via dissipative soliton formation. In order to achieve a higher quality factor and obtain the necessary anomalous dispersion, multi-mode waveguides were previously implemented in Si3N4 microresonators. However, coupling between different transverse mode families in multi-mode waveguides results in periodic disruption of dispersion and quality factor, and consequently causes perturbation to dissipative soliton formation and amplitude modulation to the corresponding spectrum. Careful choice of pump wavelength to avoid the mode crossing region is thus critical in conventional Si3N4 microresonators. Here, we report a novel design of Si3N4 microresonator in which single-mode operation, high quality factor, and anomalous dispersion are attained simultaneously. The novel microresonator is consisted of uniform single-mode waveguides in the semi-circle region, to eliminate bending induced mode coupling, and adiabatically tapered waveguides in the straight region, to avoid excitation of higher order modes. The intrinsic quality factor of the microresonator reaches 1.36 × 106 while the group velocity dispersion remains to be anomalous at −50 fs2/mm. With this novel microresonator, we demonstrate that broadband phase-locked Kerr frequency combs with flat and smooth spectra can be generated by pumping at any resonances in the optical C-band. PMID:27181420
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Designing metal hemispheres on silicon ultrathin film solar cells for plasmonic light trapping.
Gao, Tongchuan; Stevens, Erica; Lee, Jung-kun; Leu, Paul W
2014-08-15
We systematically investigate the design of two-dimensional silver (Ag) hemisphere arrays on crystalline silicon (c-Si) ultrathin film solar cells for plasmonic light trapping. The absorption in ultrathin films is governed by the excitation of Fabry-Perot TEMm modes. We demonstrate that metal hemispheres can enhance absorption in the films by (1) coupling light to c-Si film waveguide modes and (2) exciting localized surface plasmon resonances (LSPRs). We show that hemisphere arrays allow light to couple to fundamental TEm and TMm waveguide modes in c-Si film as well as higher-order versions of these modes. The near-field light concentration of LSPRs also may increase absorption in the c-Si film, though these resonances are associated with significant parasitic absorption in the metal. We illustrate how Ag plasmonic hemispheres may be utilized for light trapping with 22% enhancement in short-circuit current density compared with that of a bare 100 nm thick c-Si ultrathin film solar cell.
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Tseng, Chih-Kuo; Chen, Wei-Ting; Chen, Ku-Hung; Liu, Han-Din; Kang, Yimin; Na, Neil; Lee, Ming-Chang M.
2013-01-01
A novel technique using surface tension to locally bond germanium (Ge) on silicon (Si) is presented for fabricating high performance Ge/Si photodiodes. Surface tension is a cohesive force among liquid molecules that tends to bring contiguous objects in contact to maintain a minimum surface energy. We take advantage of this phenomenon to fabricate a heterojunction optoelectronic device where the lattice constants of joined semiconductors are different. A high-speed Ge/Si heterojunction waveguide photodiode is presented by microbonding a beam-shaped Ge, first grown by rapid-melt-growth (RMG) method, on top of a Si waveguide via surface tension. Excellent device performances such as an operating bandwidth of 17 GHz and a responsivity of 0.66 and 0.70 A/W at the reverse bias of −4 and −6 V, respectively, are demonstrated. This technique can be simply implemented via modern complementary metal-oxide-semiconductor (CMOS) fabrication technologies for integrating Ge on Si devices. PMID:24232956
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Friction measurements on InAs NWs by AFM manipulation
NASA Astrophysics Data System (ADS)
Pettersson, Hakan; Conache, Gabriela; Gray, Struan; Bordag, Michael; Ribayrol, Aline; Froberg, Linus; Samuelson, Lars; Montelius, Lars
2008-03-01
We discuss a new approach to measure the friction force between elastically deformed nanowires and a surface. The wires are bent, using an AFM, into an equilibrium shape determined by elastic restoring forces within the wire and friction between the wire and the surface. From measurements of the radius of curvature of the bent wires, elasticity theory allows the friction force per unit length to be calculated. We have studied friction properties of InAs nanowires deposited on SiO2, silanized SiO2 and Si3N4 substrates. The wires were typically from 0.5 to a few microns long, with diameters varying between 20 and 80 nm. Manipulation is done in a `Retrace Lift' mode, where feedback is turned off for the reverse scan and the tip follows a nominal path. The effective manipulation force during the reverse scan can be changed by varying an offset in the height of the tip over the surface. We will report on interesting static- and sliding friction experiments with nanowires on the different substrates, including how the friction force per unit length varies with the diameter of the wires.
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Metal slit array Fresnel lens for wavelength-scale optical coupling to nanophotonic waveguides.
Jung, Young Jin; Park, Dongwon; Koo, Sukmo; Yu, Sunkyu; Park, Namkyoo
2009-10-12
We propose a novel metal slit array Fresnel lens for wavelength-scale optical coupling into a nanophotonic waveguide. Using the plasmonic waveguide structure in Fresnel lens form, a much wider beam acceptance angle and wavelength-scale working distance of the lens was realized compared to a conventional dielectric Fresnel lens. By applying the plasmon waveguide dispersion relation to a phased antenna array model, we also develop and analyze design rules and parameters for the suggested metal slit Fresnel lens. Numerical assessment of the suggested structure shows excellent coupling efficiency (up to 59%) of the 10 mum free-space Gaussian beam to the 0.36 mum Si waveguide within a working distance of a few mum.
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Butt-coupled interface between stoichiometric Si3N4 and thin-film plasmonic waveguides
NASA Astrophysics Data System (ADS)
Dabos, G.; Ketzaki, D.; Tsiokos, D.; Pleros, N.
2017-02-01
Plasmonic technology has emerged as the most promising candidate to revolutionize future photonic-integrated-circuits (PICs) and deliver performance breakthroughs in diverse application areas by providing increased light-matter interaction at the nanometer scale, overcoming the diffraction limit. However, high insertion losses of plasmonic devices impede their practical deployment in PICs. To overcome this hurdle, selective integration of individual plasmonic devices on low-loss photonic platforms is considered, allowing for enhanced chip-scale functionalities with realistic power budgets. In this context, highly-efficient and fabrication-tolerant optical interfaces for co-planar plasmonic and photonic waveguides become essential, bridging these two "worlds" and ease combined high-volume manufacturing. Herein, a TM-mode butt-coupled interface for stoichiometric Si3N4 and Au-based thin-film plasmonic waveguides is proposed aiming to be utilized for bio-sensing applications. Following a systematic design process, this new configuration has been analyzed through 3D FDTD numerical simulations demonstrating coupling efficiencies up to 64% at the wavelength of 1.55 μm, with increased fabrication tolerance compared to silicon based waveguide alternatives.
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Direct write fabrication of waveguides and interconnects for optical printed wiring boards
NASA Astrophysics Data System (ADS)
Dingeldein, Joseph C.
Current copper based circuit technology is becoming a limiting factor in high speed data transfer applications as processors are improving at a faster rate than are developments to increase on board data transfer. One solution is to utilize optical waveguide technology to overcome these bandwidth and loss restrictions. The use of this technology virtually eliminates the heat and cross-talk loss seen in copper circuitry, while also operating at a higher bandwidth. Transitioning current fabrication techniques from small scale laboratory environments to large scale manufacturing presents significant challenges. Optical-to-electrical connections and out-of-plane coupling are significant hurdles in the advancement of optical interconnects. The main goals of this research are the development of direct write material deposition and patterning tools for the fabrication of waveguide systems on large substrates, and the development of out-of-plane coupler components compatible with standard fiber optic cabling. Combining these elements with standard printed circuit boards allows for the fabrication of fully functional optical-electrical-printed-wiring-boards (OEPWBs). A direct dispense tool was designed, assembled, and characterized for the repeatable dispensing of blanket waveguide layers over a range of thicknesses (25-225 μm), eliminating waste material and affording the ability to utilize large substrates. This tool was used to directly dispense multimode waveguide cores which required no UV definition or development. These cores had circular cross sections and were comparable in optical performance to lithographically fabricated square waveguides. Laser direct writing is a non-contact process that allows for the dynamic UV patterning of waveguide material on large substrates, eliminating the need for high resolution masks. A laser direct write tool was designed, assembled, and characterized for direct write patterning waveguides that were comparable in quality to those produced using standard lithographic practices (0.047 dB/cm loss for laser written waveguides compared to 0.043 dB/cm for lithographic waveguides). Straight waveguides, and waveguide turns were patterned at multimode and single mode sizes, and the process was characterized and documented. Support structures such as angled reflectors and vertical posts were produced, showing the versatility of the laser direct write tool. Commercially available components were implanted into the optical layer for out-of-plane routing of the optical signals. These devices featured spherical lenses on the input and output sides of a total internal reflection (TIR) mirror, as well as alignment pins compatible with standard MT design. Fully functional OEPWBs were fabricated featuring input and output out-of-plane optical signal routing with total optical losses not exceeding 10 dB. These prototypes survived thermal cycling (-40°C to 85°C) and humidity exposure (95±4% humidity), showing minimal degradation in optical performance. Operational failure occurred after environmental aging life testing at 110°C for 216 hours.
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Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.
Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich
2009-04-01
Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.
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Polymer taper bridge for silicon waveguide to single mode waveguide coupling
NASA Astrophysics Data System (ADS)
Kruse, Kevin; Middlebrook, Christopher T.
2016-03-01
Coupling of optical power from high-density silicon waveguides to silica optical fibers for signal routing can incur high losses and often requires complex end-face preparation/processing. Novel coupling device taper structures are proposed for low coupling loss between silicon photonic waveguides and single mode fibers are proposed and devices are fabricated and measured in terms of performance. Theoretical mode conversion models for waveguide tapers are derived for optimal device structure design and performance. Commercially viable vertical and multi-layer taper designs using polymer waveguide materials are proposed as innovative, cost-efficient, and mass-manufacturable optical coupling devices. The coupling efficiency for both designs is determined to evaluate optimal device dimensions and alignment tolerances with both silicon rib waveguides and silicon nanowire waveguides. Propagation loss as a function of waveguide roughness and metallic loss are determined and correlated to waveguide dimensions to obtain total insertion loss for the proposed taper designs. Multi-layer tapers on gold-sputtered substrates are fabricated through photolithography as proof-of-concept devices and evaluated for device loss optimization. Tapered waveguide coupling loss with Si WGs (2.74 dB) was experimentally measured with high correlation to theoretical results.
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NASA Astrophysics Data System (ADS)
Picard, Marie-Josée.; Latrasse, Christine; Larouche, Carl; Painchaud, Yves; Poulin, Michel; Pelletier, François; Guy, Martin
2016-03-01
One of the biggest challenges of silicon photonics is the efficient coupling of light between the sub-micron SiP waveguides and a standard optical fiber (SMF-28). We recently proposed a novel approach based on a spot-size converter (SSC) that fulfills this need. The SSC integrates a tapered silicon waveguide and a superimposed structure made of a plurality of rods of high index material, disposed in an array-like configuration and embedded in a cladding of lower index material. This superimposed structure defines a waveguide designed to provide an efficient adiabatic transfer, through evanescent coupling, to a 220 nm thick Si waveguide tapered down to a narrow tip on one side, while providing a large mode overlap to the optical fiber on the other side. An initial demonstration was made using a SSC fabricated with post-processing steps. Great coupling to a SMF-28 fiber with a loss of 0.6 dB was obtained for TEpolarized light at 1550 nm with minimum wavelength dependence. In this paper, SSCs designed for operation at 1310 and 1550 nm for TE/TM polarizations and entirely fabricated in a CMOS fab are presented.
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Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes
NASA Astrophysics Data System (ADS)
Boettcher, Shannon W.; Spurgeon, Joshua M.; Putnam, Morgan C.; Warren, Emily L.; Turner-Evans, Daniel B.; Kelzenberg, Michael D.; Maiolo, James R.; Atwater, Harry A.; Lewis, Nathan S.
2010-01-01
Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen2+/+ electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.
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Energy-conversion properties of vapor-liquid-solid-grown silicon wire-array photocathodes.
Boettcher, Shannon W; Spurgeon, Joshua M; Putnam, Morgan C; Warren, Emily L; Turner-Evans, Daniel B; Kelzenberg, Michael D; Maiolo, James R; Atwater, Harry A; Lewis, Nathan S
2010-01-08
Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen(2+/+) electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.
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Pan, Huapu; Assefa, Solomon; Green, William M J; Kuchta, Daniel M; Schow, Clint L; Rylyakov, Alexander V; Lee, Benjamin G; Baks, Christian W; Shank, Steven M; Vlasov, Yurii A
2012-07-30
The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.
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Giant nonlinear interaction between two optical beams via a quantum dot embedded in a photonic wire
NASA Astrophysics Data System (ADS)
Nguyen, H. A.; Grange, T.; Reznychenko, B.; Yeo, I.; de Assis, P.-L.; Tumanov, D.; Fratini, F.; Malik, N. S.; Dupuy, E.; Gregersen, N.; Auffèves, A.; Gérard, J.-M.; Claudon, J.; Poizat, J.-Ph.
2018-05-01
Optical nonlinearities usually appear for large intensities, but discrete transitions allow for giant nonlinearities operating at the single-photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here, we demonstrate a two-mode giant nonlinearity with a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. We exploit two detuned optical transitions associated with the exciton-biexciton QD level scheme. Owing to the broadband waveguide antenna, the two transitions are efficiently interfaced with two free-space laser beams. The reflection of one laser beam is then controlled by the other beam, with a threshold power as low as 10 photons per exciton lifetime (1.6 nW ). Such a two-color nonlinearity opens appealing perspectives for the realization of ultralow-power logical gates and optical quantum gates, and could also be implemented in an integrated photonic circuit based on planar waveguides.
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Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics
Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; ...
2016-03-01
Here, we demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneathmore » an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.« less
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NASA Astrophysics Data System (ADS)
Atsumi, Yuki; Yoshida, Tomoya; Omoda, Emiko; Sakakibara, Youichi
2017-09-01
A surface optical coupler based on a vertically curved Si waveguide was designed for coupling with high-numerical aperture single-mode optical fibers with a mode-field diameter of 5 µm. This coupler has a quite small device size, with a height of approximately 12 µm, achieved by introducing an effective spot-size converter configured with the combination of an extremely short Si exponential-inverse taper and a dome-structured SiO2 lens formed on the coupler top. The designed coupler shows high-efficiency optical coupling, with a loss of 0.8 dB for TE polarized light, as well as broad-band coupling with a 0.5-dB-loss band of 420 nm.
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NASA Astrophysics Data System (ADS)
Fischer, Inga A.; Augel, Lion; Kropp, Timo; Jitpakdeebodin, Songchai; Franz, Nuno; Oliveira, Filipe; Rolseth, Erlend; Maß, Tobias; Taubner, Thomas; Schulze, Jörg
2016-02-01
Metallic nanoantennas can be used to enhance the efficiency of optical device operation by re-distributing electromagnetic energy. Here, we investigate the effect of a random distribution of disc-shaped Al nanoantennas of different diameters deposited on Ge-on-Si PIN-photodetectors on the wavelength-dependent responsivity. We compare our experimental results to simulations and find that the largest responsivity enhancement is obtained for wavelengths that correspond to energies at or below the bandgap energy of Ge. We argue that this is the result of antenna-mediated scattering of light into waveguide modes within the Ge-on-Si PIN-photodetectors, which is effectively influenced by nanoantenna size, and we discuss a possible application of the concept for integrated biosensing.
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NASA Astrophysics Data System (ADS)
Barick, B. K.; Yadav, Shivesh; Dhar, S.
2017-11-01
GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growth temperature ∼910 °C. This alloy acts as the source of Si, Ga and In. A detailed study using a variety of characterization tools reveals that these wires, which are several tens of micron long, has a diameter distribution of the core ranging from 20 to 50 nm, while the thickness of the amorphous SiO2 shell layer is about 10 nm. These wires grow along [ 1 0 1 bar 0 ] direction. It has also been observed that the average diameter of these wires decreases, while their density increases as the gallium proportion in the Ga-In mixture is increased.
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Panchal, A K; Rai, D K; Solanki, C S
2011-04-01
Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.
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NASA Astrophysics Data System (ADS)
Tsiokos, Dimitris M.; Dabos, George; Ketzaki, Dimitra; Weeber, Jean-Claude; Markey, Laurent; Dereux, Alain; Giesecke, Anna Lena; Porschatis, Caroline; Chmielak, Bartos; Wahlbrink, Thorsten; Rochracher, Karl; Pleros, Nikos
2017-05-01
Silicon photonics meet most fabrication requirements of standard CMOS process lines encompassing the photonics-electronics consolidation vision. Despite this remarkable progress, further miniaturization of PICs for common integration with electronics and for increasing PIC functional density is bounded by the inherent diffraction limit of light imposed by optical waveguides. Instead, Surface Plasmon Polariton (SPP) waveguides can guide light at sub-wavelength scales at the metal surface providing unique light-matter interaction properties, exploiting at the same time their metallic nature to naturally integrate with electronics in high-performance ASPICs. In this article, we demonstrate the main goals of the recently introduced H2020 project PlasmoFab towards addressing the ever increasing needs for low energy, small size and high performance mass manufactured PICs by developing a revolutionary yet CMOS-compatible fabrication platform for seamless co-integration of plasmonics with photonic and supporting electronic. We demonstrate recent advances on the hosting SiN photonic hosting platform reporting on low-loss passive SiN waveguide and Grating Coupler circuits for both the TM and TE polarization states. We also present experimental results of plasmonic gold thin-film and hybrid slot waveguide configurations that can allow for high-sensitivity sensing, providing also the ongoing activities towards replacing gold with Cu, Al or TiN metal in order to yield the same functionality over a CMOS metallic structure. Finally, the first experimental results on the co-integrated SiN+plasmonic platform are demonstrated, concluding to an initial theoretical performance analysis of the CMOS plasmo-photonic biosensor that has the potential to allow for sensitivities beyond 150000nm/RIU.
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Sharma, Ramesh C; Koshi, Mitsuo
2006-11-01
The decomposition of trimethylsilane and tetramethylsilane has been investigated for the first time, using hot wire (catalytic) at various temperatures. Trimethylsilane is catalytic-dissociated in these species SiH(2), CH(3)SiH, CH(3), CH(2)Si. Time of flight mass spectroscopy signal of these species are linearly increasing with increasing catalytic-temperature. Time of flight mass spectroscopy (TOFMS) signals of (CH(3))(3)SiH and photodissociated into (CH(3))(2)SiH are decreasing with increasing hot filament temperature. TOFMS signal of (CH(3))(4)Si is decreasing with increasing hot wire temperature, but (CH(3))(3)Si signal is almost constant with increasing the temperature. We calculated activation energies of dissociated species of the parental molecules for fundamental information of reaction kinetics for the first time. Catalytic-dissociation of trimethylsilane, and tetramethylsilane single source time of flight coupled single photon VUV (118 nm) photoionization collisionless radicals at temperature range of tungsten filament 800-2360 K. The study is focused to understand the fundamental information on reaction kinetics of these molecules at hot wire temperature, and processes of catalytic-chemical vapour deposition (Cat-CVD) technique which could be implemented in amorphous and crystalline SiC semiconductors thin films.
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Correlating electronic transport to atomic structures in self-assembled quantum wires.
Qin, Shengyong; Kim, Tae-Hwan; Zhang, Yanning; Ouyang, Wenjie; Weitering, Hanno H; Shih, Chih-Kang; Baddorf, Arthur P; Wu, Ruqian; Li, An-Ping
2012-02-08
Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at the atomic scale. Here we report on the evolutions of electronic transport as a function of temperature and interwire coupling as the quantum wires of GdSi(2) are self-assembled on Si(100) wire-by-wire. The correlation between structure, electronic properties, and electronic transport are examined by combining nanotransport measurements, scanning tunneling microscopy, and density functional theory calculations. A metal-insulator transition is revealed in isolated nanowires, while a robust metallic state is obtained in wire bundles at low temperature. The atomic defects lead to electron localizations in isolated nanowire, and interwire coupling stabilizes the structure and promotes the metallic states in wire bundles. This illustrates how the conductance nature of a one-dimensional system can be dramatically modified by the environmental change on the atomic scale. © 2012 American Chemical Society
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NASA Astrophysics Data System (ADS)
Inasawa, Susumu
2015-02-01
We conducted in-situ monitoring of the formation of silicon wires in the zinc reduction reaction of SiCl4 at 950 °C. Tip growth with a constant growth rate was observed. Some wires showed a sudden change in the growth direction during their growth. We also observed both the lateral faces and cross sections of formed wires using a scanning electron microscope. Although wires with smooth lateral faces had a smooth hexagonal cross section, those with rough lateral faces had a polygonal cross section with a radial pattern. The transition of lateral faces from smooth to rough was found even in a single wire. Because the diameter of the rough part became larger than that of the smooth part, we consider that the wire diameter is a key factor for the lateral faces. Our study revealed that both dynamic and static observations are still necessary to further understand the VLS growth of wires and nanowires.
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High resolution structural characterisation of laser-induced defect clusters inside diamond
NASA Astrophysics Data System (ADS)
Salter, Patrick S.; Booth, Martin J.; Courvoisier, Arnaud; Moran, David A. J.; MacLaren, Donald A.
2017-08-01
Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides, and defects within diamond. We present a transmission electron microscopy study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy indicates that the majority of the irradiated region remains as sp3 bonded diamond. Electrically conductive paths are attributed to the formation of multiple nano-scale, sp2-bonded graphitic wires and a network of strain-relieving micro-cracks.
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TM grating coupler on low-loss LPCVD based Si3N4 waveguide platform
NASA Astrophysics Data System (ADS)
Dabos, G.; Manolis, A.; Giesecke, A. L.; Porschatis, C.; Chmielak, B.; Wahlbrink, T.; Pleros, N.; Tsiokos, D.
2017-12-01
We demonstrate, for the first time to our knowledge, a fully etched TM grating coupler for low-loss Low-Pressure-Chemical-Vapor-Deposition (LPCVD) based silicon nitride platform with a coupling loss of 6.5 dB at 1541 nm and a 1 dB bandwidth of 55 nm, addressing applications where TM polarization is a pre-requisite. The proposed GC and the 360 nm × 800 nm strip based Si3N4 waveguides have been fabricated by optical projection lithography using an i-line stepper tool enabling low-cost and mass manufacturing of photonic-integrated-circuits.
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Silicon photonics cloud (SiCloud)
NASA Astrophysics Data System (ADS)
DeVore, Peter T. S.; Jiang, Yunshan; Lynch, Michael; Miyatake, Taira; Carmona, Christopher; Chan, Andrew C.; Muniam, Kuhan; Jalali, Bahram
2015-02-01
We present SiCloud (Silicon Photonics Cloud), the first free, instructional web-based research and education tool for silicon photonics. SiCloud's vision is to provide a host of instructional and research web-based tools. Such interactive learning tools enhance traditional teaching methods by extending access to a very large audience, resulting in very high impact. Interactive tools engage the brain in a way different from merely reading, and so enhance and reinforce the learning experience. Understanding silicon photonics is challenging as the topic involves a wide range of disciplines, including material science, semiconductor physics, electronics and waveguide optics. This web-based calculator is an interactive analysis tool for optical properties of silicon and related material (SiO2, Si3N4, Al2O3, etc.). It is designed to be a one stop resource for students, researchers and design engineers. The first and most basic aspect of Silicon Photonics is the Material Parameters, which provides the foundation for the Device, Sub-System and System levels. SiCloud includes the common dielectrics and semiconductors for waveguide core, cladding, and photodetection, as well as metals for electrical contacts. SiCloud is a work in progress and its capability is being expanded. SiCloud is being developed at UCLA with funding from the National Science Foundation's Center for Integrated Access Networks (CIAN) Engineering Research Center.
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NASA Astrophysics Data System (ADS)
Wang, Jun; Mu, Xiaoyu; Wang, Gang; Liu, Changlong
2017-11-01
By etching two SiO2 optical waveguide slabs separately implanted with 90 keV Ag ions and 60 keV Cu ions at the same dose of 6 × 1016 cm-2, two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers with 600-nm periodicity and 100-nm thickness were fabricated, and their structural and vertical input coupling properties were investigated. Experimental results revealed that the two couplers could convert light beams at wavelengths of 620-880 nm into guided waves with different efficiencies, highlighting the special importance of metal nanoparticles (NPs). Further discussions also revealed that owing to the introduction of periodically distributed metal NPs, the periodical phase modification of the transmitted beam was enhanced drastically, and the nanocomposite veins could behave as efficient light scatterers. As a result, the two couplers were much larger in coupling efficiency than the NP-free one with identical morphological parameters. The above findings may be useful to construct thin and short but efficient surface-relief grating couplers on glass optical waveguides.
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Dabos, G; Manolis, A; Papaioannou, S; Tsiokos, D; Markey, L; Weeber, J-C; Dereux, A; Giesecke, A L; Porschatis, C; Chmielak, B; Pleros, N
2018-05-14
We demonstrate wavelength-division-multiplexed (WDM) 200 Gb/s (8 × 25 Gb/s) data transmission over 100 μm long aluminum (Al) surface-plasmon-polariton (SPP) waveguides on a Si 3 N 4 waveguide platform at telecom wavelengths. The Al SPP waveguide was evaluated in terms of signal integrity by performing bit-error-rate (BER) measurements that revealed error-free operation for all eight 25 Gb/s non-return-to-zero (NRZ) modulated data channels with power penalties not exceeding 0.2 dB at 10 -9 . To the best of our knowledge, this is the first demonstration of WDM enabled data transmission over complementary-metal-oxide-semiconductor (CMOS) SPP waveguides fueling future development of CMOS compatible plasmo-photonic devices for on-chip optical interconnections.
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NASA Astrophysics Data System (ADS)
Wang, Bowen; Li, Yuanyuan; Xie, Xinliang; Huang, Wenmei; Weng, Ling; Zhang, Changgeng
2018-05-01
Based on the Wiedemann effect and inverse magnetostritive effect, the output voltage model of a magnetostrictive displacement sensor has been established. The output voltage of the magnetostrictive displacement sensor is calculated in different magnetic fields. It is found that the calculating result is in an agreement with the experimental one. The theoretical and experimental results show that the output voltage of the displacement sensor is linearly related to the magnetostrictive differences, (λl-λt), of waveguide wires. The measured output voltages for Fe-Ga and Fe-Ni wire sensors are 51.5mV and 36.5mV, respectively, and the output voltage of Fe-Ga wire sensor is obviously higher than that of Fe-Ni wire sensor under the same magnetic field. The model can be used to predict the output voltage of the sensor and to provide guidance for the optimization design of the sensor.
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Tuning the conductivity along atomic chains by selective chemisorption
NASA Astrophysics Data System (ADS)
Edler, F.; Miccoli, I.; Stöckmann, J. P.; Pfnür, H.; Braun, C.; Neufeld, S.; Sanna, S.; Schmidt, W. G.; Tegenkamp, C.
2017-03-01
Adsorption of Au on vicinal Si(111) surfaces results in growth of long-range ordered metallic quantum wires. In this paper, we utilized site-specific and selective adsorption of oxygen to modify chemically the transport via different channels in the systems Si(553)-Au and Si(557)-Au. They were analyzed by electron diffraction and four-tip STM-based transport experiments. Modeling of the adsorption process by density functional theory shows that the adatoms and rest atoms on Si(557)-Au provide energetically favored adsorption sites, which predominantly alter the transport along the wire direction. Since this structural motif is missing on Si(553)-Au, the transport channels remain almost unaffected by oxidation.
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Vapor-Redissolution Technique for Reduction of POLYMER/Si Arrayed Waveguide Grating Loss
NASA Astrophysics Data System (ADS)
Zhang, Haiming; Zhang, Daming; Qin, Zhenkun; Ma, Chunsheng
An efficient vapor-redissolution technique is used to greatly reduce sidewall scattering loss in the polymer arrayed waveguide grating (AWG) fabricated on a silicon substrate. Smoother sidewalls are achieved and verified by scanning electron microscopy. Reduction of sidewall scattering loss is further measured for the loss measurement of both straight waveguides and AWG devices. The sidewall loss in straight polymer waveguide is decreased by 2.1 dB/cm, the insertion loss of our AWG device is reduced by about 5.5 dB for the central channel and 6.7 dB for the edge channels, the crosstalk is reduced by 2.5 dB, and 3-dB bandwidth is narrowed by 0.05 nm after the vapor-redissoluton treatment.
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Wavelength interrogation of fiber Bragg grating sensors using tapered hollow Bragg waveguides.
Potts, C; Allen, T W; Azar, A; Melnyk, A; Dennison, C R; DeCorby, R G
2014-10-15
We describe an integrated system for wavelength interrogation, which uses tapered hollow Bragg waveguides coupled to an image sensor. Spectral shifts are extracted from the wavelength dependence of the light radiated at mode cutoff. Wavelength shifts as small as ~10 pm were resolved by employing a simple peak detection algorithm. Si/SiO₂-based cladding mirrors enable a potential operational range of several hundred nanometers in the 1550 nm wavelength region for a taper length of ~1 mm. Interrogation of a strain-tuned grating was accomplished using a broadband amplified spontaneous emission (ASE) source, and potential for single-chip interrogation of multiplexed sensor arrays is demonstrated.
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Humer, Markus; Guider, Romain; Jantsch, Wolfgang; Fromherz, Thomas
2013-08-12
We experimentally investigate PbS nanocrystal (NC) photoluminescence (PL) coupled to all-integrated Si-based ring resonators and waveguides at telecom wavelengths. Dissolving the NCs into Novolak polymer significantly improves their stability in ambient atmosphere. Polymer-NC blends of various NC concentrations can be applied to and removed from the same device. For NC concentrations up to 4vol%, the spontaneous emission rate into ring-resonator modes is enhanced by a factor of ~13 with respect to that into a straight waveguide. The PL intensity shows a linear dependence on the excitation intensity up to 1.64kW/cm(2) and stable quality factors of ~2500.
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Wavelength-agile near-IR optical parametric oscillator using a deposited silicon waveguide.
Wang, Ke-Yao; Foster, Mark A; Foster, Amy C
2015-06-15
Using a deposited hydrogenated amorphous silicon (a-Si:H) waveguide, we demonstrate ultra-broad bandwidth (60 THz) parametric amplification via four-wave mixing (FWM), and subsequently achieve the first silicon optical parametric oscillator (OPO) at near-IR wavelengths. Utilization of the time-dispersion-tuned technique provides an optical source with active wavelength tuning over 42 THz with a fixed pump wave.
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Metamaterial and Metastructural Architectures for Novel C4ISR Devices and Sensors
2015-03-01
2.7 The SEM pictures of the fabricated metastructure cage waveguide a) before and b) after the thermal oxidization and HF etching process ..10 Fig...of the hollow core. (Bottom) The SiO2 shell in the core was removed by buffered high-frequency etch...28 Fig. 3.9 SEM images of the waveguides after etching in CR-9 and buffered oxide etchant
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NASA Astrophysics Data System (ADS)
Kang, Jian; Takagi, Shinichi; Takenaka, Mitsuru
2018-04-01
We present the design methodology for Ge passive components including single-mode waveguide, grating couplers, multimode interferometer (MMI) couplers, and micro-ring resonators on the Ge-on-insulator wafer at a 1.95 µm wavelength. Characterizations of the fabricated Ge passive devices reveal a good consistence between the experimental and simulation results. By using the Ge micro-ring device, we also reveal that the thermo-optic coefficient in the Ge strip waveguide is 5.74 × 10-4/°C, which is much greater than that in Si.
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Vakarin, Vladyslav; Ramírez, Joan Manel; Frigerio, Jacopo; Ballabio, Andrea; Le Roux, Xavier; Liu, Qiankun; Bouville, David; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine
2017-09-01
This Letter explores the use of Ge-rich Si 0.2 Ge 0.8 waveguides on graded Si 1-x Ge x substrate for the demonstration of ultra-wideband photonic integrated circuits in the mid-infrared (mid-IR) wavelength range. We designed, fabricated, and characterized broadband Mach-Zehnder interferometers fully covering a range of 3 μm in the mid-IR band. The fabricated devices operate indistinctly in quasi-TE and quasi-TM polarizations, and have an extinction ratio higher than 10 dB over the entire operating wavelength range. The obtained results are in good correlation with theoretical predictions, while numerical simulations indicate that the device bandwidth can reach one octave with low additional losses. This Letter paves the way for further realization of mid-IR integrated spectrometers using low-index-contrast Si 1-x Ge x waveguides with high germanium concentration.
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NASA Astrophysics Data System (ADS)
Couillard, M.; Yurtsever, A.; Muller, D. A.
2010-05-01
Waveguide electromagnetic modes excited by swift electrons traversing Si slabs at normal and oblique incidence are analyzed using monochromated electron energy-loss spectroscopy and interpreted using a local dielectric theory that includes relativistic effects. At normal incidence, sharp spectral features in the visible/near-infrared optical domain are directly assigned to p -polarized modes. When the specimen is tilted, s -polarized modes, which are completely absent at normal incidence, become visible in the loss spectra. In the tilted configuration, the dispersion of p -polarized modes is also modified. For tilt angles higher than ˜50° , Cherenkov radiation, the phenomenon responsible for the excitation of waveguide modes, is expected to partially escape the silicon slab and the influence of this effect on experimental measurements is discussed. Finally, we find evidence for an interference effect at parallel Si/SiO2 interfaces, as well as a delocalized excitation of guided Cherenkov modes.
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Photorefractive waveguides in oxide crystals: fabrication, properties, and applications
NASA Astrophysics Data System (ADS)
Kip, D.
1998-08-01
In several oxide crystals the refractive index can be changed by inhomogeneous illumination, and these photorefractive properties have allowed for a wide variety of applications in optical data storage and dynamic holography. The high light intensities that are inherent in waveguide geometries make it relatively easy to observe photorefractive effects in waveguide structures, too. On the one hand, these effects are feared as optical damage, as they can degrade the performance of integrated optical devices. On the other hand, optical wave mixing in photorefractive waveguides is of considerable interest for the development of nonlinear optical components. A review of the results of recent research on the fabrication, investigation, and applications of photorefractive waveguides is given. The formation and photorefractive properties of LiNbO3, LiTaO3, BaTiO3, KNbO3, SrxBa1-xNb2O6 (0.25hxА.75, SBN), and Bi12(Si,Ti,Ge)O20 (BSO, BTO, BGO) waveguides are discussed. Furthermore, the suitability of photorefractive waveguides for nonlinear optical components is demonstrated in some examples.
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Efficient coupling between Si3N4 photonic and hybrid slot-based CMOS plasmonic waveguide
NASA Astrophysics Data System (ADS)
Chatzianagnostou, E.; Ketzaki, D.; Manolis, A.; Dabos, G.; Pleros, N.; Markey, L.; Weeber, J.-C.; Dereux, A.; Giesecke, A. L.; Porschatis, C.; Tsiokos, D.
2018-02-01
Bringing photonics and electronics into a common integration platform can unleash unprecedented performance capabilities in data communication and sensing applications. Plasmonics were proposed as the key technology that can merge ultra-fast photonics and low-dimension electronics due to their metallic nature and their unique ability to guide light at sub-wavelength scales. However, inherent high losses of plasmonics in conjunction with the use of CMOS incompatible metals like gold and silver which are broadly utilized in plasmonic applications impede their broad utilization in Photonic Integrated Circuits (PICs). To overcome those limitations and fully exploit the profound benefits of plasmonics, they have to be developed along two technology directives. 1) Selectively co-integrate nanoscale plasmonics with low-loss photonics and 2) replace noble metals with alternative CMOS-compatible counterparts accelerating volume manufacturing of plasmo-photonic ICs. In this context, a hybrid plasmo-photonic structure utilizing the CMOS-compatible metals Aluminum (Al) and Copper (Cu) is proposed to efficiently transfer light between a low-loss Si3N4 photonic waveguide and a hybrid plasmonic slot waveguide. Specifically, a Si3N4 strip waveguide (photonic part) is located below a metallic slot (plasmonic part) forming a hybrid structure. This configuration, if properly designed, can support modes that exhibit quasi even or odd symmetry allowing power exchange between the two parts. According to 3D FDTD simulations, the proposed directional coupling scheme can achieve coupling efficiencies at 1550nm up to 60% and 74% in the case of Al and Cu respectively within a coupling length of just several microns.
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NASA Astrophysics Data System (ADS)
Honda, Kazuhiro; Ohdaira, Keisuke; Matsumura, Hideki
2008-05-01
In catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, source gases are decomposed by catalytic cracking reactions with heated catalyzing metal wires. In the case of silicon (Si) film deposition, such metal wires are often converted to silicide, which shortens the lifetime of catalyzing wires. As a catalyzer, tungsten (W) is widely used. Thus, the process of silicidation of a W catalyzer at temperatures over 1650 °C, which is the temperature used in Cat-CVD for Si film deposition, was studied extensively in various experiments. It is found that two phases of tungsten-silicide, WSi2 and W5Si3, are formed at this temperature, and that the radiation emissivity of WSi2 is 1.2 to 1.7 times higher than that of W5Si3 and pure W. The increase of surface emissivity due to the formation of WSi2 decreases the catalyzer surface temperature which induces further growth of the tungsten-silicide layer. It is also found that the suppression of WSi2 formation by elevating catalyzer temperatures over 1750 °C is a key to extending the lifetime of the W catalyzer in Cat-CVD.
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Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects
NASA Astrophysics Data System (ADS)
Hsieh, I.-Wei
In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic devices are quite different from those of electronic devices. Minimizing propagation losses by reducing sidewall roughness to nanometer scale over a device length of several millimeters or even centimeters has prompted researchers in academia and industry to refine the fabrication process. Chapter 3 of this thesis summarizes our efforts in fabricating silicon photonic devices using standard CMOS technology. Chapter 4 describes the characterization of nonlinear effects, including self-phase modulation (SPM), cross-phase modulation (XPM), and supercontinuum generation in silicon-wire waveguides. Silicon-wire waveguides are strip waveguides with submicron transverse dimensions, which allow strong light confinement inside the silicon core. This strong optical confinement, in addition to the large third-order nonlinear optical susceptibility of crystalline silicon, leads to a net nonlinearity which is several orders of magnitude higher than the nonlinearity of silica fiber. Significant nonlinear effects can be observed and characterized over a device length of only several millimeters in silicon wires with very small input power. These effects provide opportunities for engineers to design active silicon photonic devices which are compact and energy-efficient. Chapter 5 presents a realization of an integrated SOI optical isolator, which is a critical yet often overlooked component in photonic integrated circuits. This study shows the feasibility to make a hybrid garnet/SOI active device with very promising results. Finally, Chapter 6 summarizes our demonstration of transmitting terabit-scale data streams in silicon-wire waveguides, which is an important first-step towards enabling intra-chip interconnection networks with ultra-high bandwidths. Although the scope of this thesis is limited to providing only fractional views of the whole silicon photonics area, it provides enough references for interested readers to conduct further literature research in other aspects of silicon photonics. It is the author's hope that the thesis would convey to its readers the significance and potential of this exciting emerging technology.
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Weakly modulated silicon-dioxide-cladding gratings for silicon waveguide Fabry-Pérot cavities.
Grote, Richard R; Driscoll, Jeffrey B; Biris, Claudiu G; Panoiu, Nicolae C; Osgood, Richard M
2011-12-19
We show by theory and experiment that silicon-dioxide-cladding gratings for Fabry-Pérot cavities on silicon-on-insulator channel ("wire") waveguides provide a low-refractive-index perturbation, which is required for several important integrated photonics components. The underlying refractive index perturbation of these gratings is significantly weaker than that of analogous silicon gratings, leading to finer control of the coupling coefficient κ. Our Fabry-Pérot cavities are designed using the transfer-matrix method (TMM) in conjunction with the finite element method (FEM) for calculating the effective index of each waveguide section. Device parameters such as coupling coefficient, κ, Bragg mirror stop band, Bragg mirror reflectivity, and quality factor Q are examined via TMM modeling. Devices are fabricated with representative values of distributed Bragg reflector lengths, cavity lengths, and propagation losses. The measured transmission spectra show excellent agreement with the FEM/TMM calculations.
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NASA Astrophysics Data System (ADS)
Butt, M. A.; Khonina, S. N.; Kazanskiy, N. L.
2018-05-01
A highly sensitive refractive index sensor based on an integrated hybrid plasmonic waveguide (HPWG) and a Metal-Insulator-Metal (M-I-M) micro-ring resonator is presented. In our design, there are two slot-waveguide-based micro-rings that encircle a gold disc. The outer slot WG is formed by the combination of Silicon-Air-Gold ring and the inner slot-waveguide is formed by Gold ring-Air-Gold disc. The slot-waveguide rings provide an interaction length sufficient to accumulate a detectable wavelength shift. The transmission spectrum and electric field distribution of this sensor structure are simulated using Finite Element Method (FEM). The sensitivity of this micro-ring resonator is achieved at 800 nm/RIU which is about six times higher than that of the conventional Si ring with the same geometry. Our proposed sensor design has a potential to find further applications in biomedical science and nano-photonic circuits.
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High density and taper-free boron doped Si{sub 1−x}Ge{sub x} nanowire via two-step growth process
DOE Office of Scientific and Technical Information (OSTI.GOV)
Periwal, Priyanka; Salem, Bassem; Bassani, Franck
2014-07-01
The authors study Au catalyzed chemical vapor growth of Si{sub 1−x}Ge{sub x} alloyed nanowires in the presence of diborane, serving as a dopant precursor. Our experiments reveal that introduction of diborane has a significant effect on doping and morphology. Boron exposure poisons the Au catalyst surface, suppresses catalyst activity, and causes significantly tapered wires, as a result of conformal growth. The authors develop here a two-step method to obtain high density and taper-free boron doped Si{sub 1−x}Ge{sub x} alloy nanowires. The two-step process consists of: (1) growth of a small undoped Si{sub 1−x}Ge{sub x} section and (2) introduction of diboranemore » to form a boron doped Si{sub 1−x}Ge{sub x} section. The catalyst preparation step remarkably influences wire yield, quality and morphology. The authors show that dopant-ratio influences wire resistivity and morphology. Resistivity for high boron doped Si{sub 1−x}Ge{sub x} nanowire is 6 mΩ-cm. Four probe measurements show that it is possible to dope Si{sub 1−x}Ge{sub x} alloy nanowires with diborane.« less
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In Situ Electrochemical Deposition of Microscopic Wires
NASA Technical Reports Server (NTRS)
Yun, Minhee; Myung, Nosang; Vasquez, Richard
2005-01-01
A method of fabrication of wires having micron and submicron dimensions is built around electrochemical deposition of the wires in their final positions between electrodes in integrated circuits or other devices in which the wires are to be used. Heretofore, nanowires have been fabricated by a variety of techniques characterized by low degrees of controllability and low throughput rates, and it has been necessary to align and electrically connect the wires in their final positions by use of sophisticated equipment in expensive and tedious post-growth assembly processes. The present method is more economical, offers higher yields, enables control of wire widths, and eliminates the need for post-growth assembly. The wires fabricated by this method could be used as simple electrical conductors or as transducers in sensors. Depending upon electrodeposition conditions and the compositions of the electroplating solutions in specific applications, the wires could be made of metals, alloys, metal oxides, semiconductors, or electrically conductive polymers. In this method, one uses fabrication processes that are standard in the semiconductor industry. These include cleaning, dry etching, low-pressure chemical vapor deposition, lithography, dielectric deposition, electron-beam lithography, and metallization processes as well as the electrochemical deposition process used to form the wires. In a typical case of fabrication of a circuit that includes electrodes between which microscopic wires are to be formed on a silicon substrate, the fabrication processes follow a standard sequence until just before the fabrication of the microscopic wires. Then, by use of a thermal SiO-deposition technique, the electrodes and the substrate surface areas in the gaps between them are covered with SiO. Next, the SiO is electron-beam patterned, then reactive-ion etched to form channels having specified widths (typically about 1 m or less) that define the widths of the wires to be formed. Drops of an electroplating solution are placed on the substrate in the regions containing the channels thus formed, then the wires are electrodeposited from the solution onto the exposed portions of the electrodes and into the channels. The electrodeposition is a room-temperature, atmospheric-pressure process. The figure shows an example of palladium wires that were electrodeposited into 1-mm-wide channels between gold electrodes.
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Jung, Yongmin; Brambilla, Gilberto; Richardson, David J
2008-09-15
We report the use of a sub-wavelength optical wire (SOW) with a specifically designed transition region as an efficient tool to filter higher-order modes in multimode waveguides. Higher-order modes are effectively suppressed by controlling the transition taper profile and the diameter of the sub-wavelength optical wire. As a practical example, single-mode operation of a standard telecom optical fiber over a broad spectral window (400 approximately 1700 nm) was demonstrated with a 1microm SOW. The ability to obtain robust and stable single-mode operation over a very broad range of wavelengths offers new possibilities for mode control within fiber devices and is relevant to a range of application sectors including high performance fiber lasers, sensors, photolithography, and optical coherence tomography systems.
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Investigation of the interwire energy transfer of elastic guided waves inside prestressed cables.
Treyssède, Fabien
2016-07-01
Elastic guided waves are of interest for the non-destructive evaluation of cables. Cables are most often multi-wire structures, and understanding wave propagation requires numerical models accounting for the helical geometry of individual wires, the interwire contact mechanisms and the effects of prestress. In this paper, a modal approach based on a so-called semi-analytical finite element method and taking advantage of a biorthogonality relation is proposed in order to calculate the forced response under excitation of a cable, multi-wired, twisted, and prestressed. The main goal of this paper is to investigate how the energy transfers from a given wire, directly excited, to the other wires in order to identify some localization of energy inside the active wire as the waves propagate along the waveguide. The power flow of the excited field is theoretically derived and an energy transfer parameter is proposed to evaluate the level of energy localization inside a given wire. Numerical results obtained for different polarizations of excitation, central and peripheral, highlight how the energy may localize, spread, or strongly change in the cross-section as waves travel along the axis. In particular, a compressional mode localized inside the central wire is found, with little dispersion and significant excitability.
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Enhancing Optical Forces in InP-Based Waveguides.
Aryaee Panah, Mohammad Esmail; Semenova, Elizaveta S; Lavrinenko, Andrei V
2017-06-08
Cantilever sensors are among the most important microelectromechanical systems (MEMS), which are usually actuated by electrostatic forces or piezoelectric elements. Although well-developed microfabrication technology has made silicon the prevailing material for MEMS, unique properties of other materials are overlooked in this context. Here we investigate optically induced forces exerted upon a semi-insulating InP waveguide suspended above a highly doped InP:Si substrate, in three different regimes: the epsilon-near-zero (ENZ), with excitation of surface plasmon polaritons (SPPs) and phonons excitation. An order of magnitude amplification of the force is observed when light is coupled to SPPs, and three orders of magnitude amplification is achieved in the phonon excitation regime. In the ENZ regime, the force is found to be repulsive and higher than that in a waveguide suspended above a dielectric substrate. Low losses in InP:Si result in a big propagation length. The induced deflection can be detected by measuring the phase change of the light when passing through the waveguide, which enables all-optical functioning, and paves the way towards integration and miniaturization of micro-cantilevers. In addition, tunability of the ENZ and the SPP excitation wavelength ranges, via adjusting the carrier concentration, provides an extra degree of freedom for designing MEMS devices.
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InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
NASA Astrophysics Data System (ADS)
Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May
2018-06-01
We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal–organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III–V nano-light emitters on mainstream (001) Si substrates.
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InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.
Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May
2018-06-01
We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.
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Dufour, Christian; Cardin, Julien; Debieu, Olivier; Fafin, Alexandre; Gourbilleau, Fabrice
2011-04-04
By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.
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2011-01-01
By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible. PMID:21711829
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NASA Astrophysics Data System (ADS)
Tabata, Akimori; Komura, Yusuke; Hoshide, Yoshiki; Narita, Tomoki; Kondo, Akihiro
2008-01-01
Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH4/CH4/H2 gases, and the influence of substrate temperature, Ts (104 < Ts < 434 °C), on the properties of the SiC thin films was investigated. X-ray diffraction patterns and Raman scattering spectra revealed that nanocrystalline cubic SiC (nc-3C-SiC) films grew at Ts above 187 °C, while completely amorphous films grew at Ts = 104 °C. Fourier transform infrared absorption spectra revealed that the crystallinity of the nc-3C-SiC was improved with increasing Ts up to 282 °C and remained almost unchanged with a further increase in Ts from 282 to 434 °C. The spin density was reduced monotonically with increasing Ts.
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Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-Ichi; Bowler, David R; Miki, Kazushi
2017-04-20
We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from [Formula: see text] to [Formula: see text] Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.
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A Cryogenic Waveguide Mount for Microstrip Circuit and Material Characterization
NASA Technical Reports Server (NTRS)
U-yen, Kongpop; Brown, Ari D.; Moseley, Samuel H.; Noroozian, Omid; Wollack, Edward J.
2016-01-01
A waveguide split-block fixture used in the characterization of thin-film superconducting planar circuitry at millimeter wavelengths is described in detail. The test fixture is realized from a pair of mode converters, which transition from rectangular-waveguide to on-chip microstrip-line signal propagation via a stepped ridge-guide impedance transformer. The observed performance of the W-band package at 4.2K has a maximum in-band transmission ripple of 2dB between 1.53 and 1.89 times the waveguide cutoff frequency. This metrology approach enables the characterization of superconducting microstrip test structures as a function temperature and frequency. The limitations of the method are discussed and representative data for superconducting Nb and NbTiN thin film microstrip resonators on single-crystal Si dielectric substrates are presented.
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Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka
2014-07-14
Terahertz (THz) wave generation via difference frequency mixing (DFM) process in strain silicon membrane waveguides by introducing the straining layer is theoretically investigated. The Si(3)N(4) straining layer induces anisotropic compressive strain in the silicon core and results in the appearance of the bulk second order nonlinear susceptibility χ((2)) by breaking the crystal symmetry. We have proposed waveguide structures for THz wave generation under the DFM process by .using the modal birefringence in the waveguide core. Our simulations show that an output power of up to 0.95 mW can be achieved at 9.09 THz. The strained silicon optical device may open a widow in the field of the silicon-based active THz photonic device applications.
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Silicon-nitride/oxynitride wavelength demultiplexer and resonators for quantum photonics
NASA Astrophysics Data System (ADS)
Lim, Soon Thor; Gandhi, Alagappan; Ong, Jun Rong; Ang, Thomas; Png, Ching Eng; Lu, Ding; Ang, Norman Soo Seng; Teo, Ee Jin; Teng, Jinghua
2018-02-01
SiOxNy shows promises for bright emitters of single photons. We successfully fabricated ultra-low-loss SiOxNy waveguide and AWG with low insertion loss <1dB and <3dB total loss (<2dB on-chip loss and <1dB coupling loss) at 1310nm.
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Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers
NASA Astrophysics Data System (ADS)
Ito, Kazuki; Hiraki, Tatsurou; Tsuchizawa, Tai; Ishikawa, Yasuhiko
2017-04-01
Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n+-Ge/i-Ge/p+-SOI PDs are compared with those of p+-Ge/i-Ge/n+-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 µm, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p+-Ge/i-Ge/n+-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n+-Ge/i-Ge/p+-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p+-Ge/i-Ge/n+-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths.
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Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties.
Hwang, Yun Jeong; Wu, Cheng Hao; Hahn, Chris; Jeong, Hoon Eui; Yang, Peidong
2012-03-14
Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays increased by 5 times compared to the photocurrent density with InGaN nanowire arrays grown on planar Si (1.23 V vs RHE). High-resolution transmission electron microscopy showed that InGaN nanowires are stable after 15 h of illumination. These measurements show that Si/InGaN hierarchical nanostructures are a viable high surface area electrode geometry for solar water splitting. © 2012 American Chemical Society
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NASA Astrophysics Data System (ADS)
Nozaka, Takahiro; Mukai, Kohki
2016-04-01
A tunable microcavity device composed of optical polymer and Si with a colloidal quantum dot (QD) is proposed as a single-photon source for planar optical circuit. Cavity size is controlled by electrostatic micromachine behavior with the air bridge structure to tune timing of photon injection into optical waveguide from QD. Three-dimensional positioning of a QD in the cavity structure is available using a nanohole on Si processed by scanning probe microscope lithography. We fabricated the prototype microcavity with PbS-QD-mixed polymenthyl methacrylate on a SOI (semiconductor-on-insulator) substrate to show the tunability of cavity size as the shift of emission peak wavelength of QD ensemble.
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Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.
Ahn, Jaehui; Mastro, Michael A; Klein, Paul B; Hite, Jennifer K; Feigelson, Boris; Eddy, Charles R; Kim, Jihyun
2011-10-24
The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction. © 2011 Optical Society of America
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Development of a TiO2/SiO2 waveguide-mode chip for an ultraviolet near-field fluorescence sensor.
Kuroda, Chiaki; Nakai, Midori; Fujimaki, Makoto; Ohki, Yoshimichi
2018-03-19
Aimed at detecting fluorescent-labeled biological substances sensitively, a sensor that utilizes near-field light has attracted much attention. According to our calculations, a planar structure composed of two dielectric layers can enhance the electric field of UV near-field light effectively by inducing waveguide-mode (WM) resonance. The fluorescence intensity obtainable by a WM chip with an optimized structure is 5.5 times that obtainable by an optimized surface plasmon resonance chip. We confirmed the above by making a WM chip consisting of TiO 2 and SiO 2 layers on a silica glass substrate and by measuring the fluorescence intensity of a solution of quantum dots dropped on the chip.
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Filtering effect of SiO2 optical waveguide ring resonator applied to optoelectronic oscillator.
Chen, Jiamin; Zheng, Yongqiu; Xue, Chenyang; Zhang, Chengfei; Chen, Yi
2018-05-14
Single-mode oscillation is crucial to the practicality of optoelectronic oscillator (OEO). Due to the limited by bandwidth and precision of radio frequency (RF) filters, it is difficult to be achieved for the OEO based on the long fiber-optic delay line. So instead of the long fiber-optic delay line, SiO 2 optical waveguide ring resonator (OWRR) with high-Q and mode selection is first presented to be applied to OEO. The OEOs based on the minimum loop and SiO 2 OWRR are constructed. The oscillation characteristics of the minimum loop OEO and the transmission characteristics of the SiO 2 OWRR are simulated by MATLAB, respectively. The filtering effect of the SiO 2 OWRR applied to the OEO is verified theoretically by comparing these simulation results. Subsequently, the contrastive experiments of the above two OEOs on oscillation modes are carried out. The oscillation mode spacing of 40.32 MHz and 2.137 GHz are obtained. These results show that the SiO 2 OWRR can function as an excellent 'filter' in the minimum loop of the OEO. Moreover, the side mode suppression ratio and the phase noise of the OEO have been improved. Our experimental results demonstrate that the OEO adopting SiO 2 OWRR is feasible to achieve the single-mode oscillation and obtain better performance microwave signals.
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Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides
NASA Astrophysics Data System (ADS)
Wei, Yuxin; Li, Guoyi; Hao, Yinlei; Li, Yubo; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing
2011-08-01
The undercut long-wave infrared (LWIR) waveguide components with air-gap beneath are analyzed and fabricated on the Si-wafer with simple manufacturing process. A 1 × 2 multimode interference (MMI) splitter based on this structure is presented and measured under the 10.6μm wavelength experimental setup. The uniformity of the MMI fabricated is 0.76 dB. The relationship among the output power, slab thickness and air-gap width is also fully discussed. Furthermore, undercut straight waveguides based on SOI platform are fabricated for propagation loss evaluation. Ways to reduce the loss are discussed either.
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Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale.
Wu, Marcelo; Han, Zhanghua; Van, Vien
2010-05-24
Subwavelength conductor-gap-silicon plasmonic waveguides along with compact S-bends and Y-splitters were theoretically investigated and experimentally demonstrated on a silicon-on-insulator platform. A thin SiO2 gap between the conductor layer and silicon core provides subwavelength confinement of light while a long propagation length of 40 microm was achieved. Coupling of light between the plasmonic and conventional silicon photonic waveguides was also demonstrated with a high efficiency of 80%. The compact sizes, low loss operation, efficient input/output coupling, combined with a CMOS-compatible fabrication process, make these conductor-gap-silicon plasmonic devices a promising platform for realizing densely-integrated plasmonic circuits.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Tarasov, Yu.V., E-mail: yutarasov@ire.kharkov.ua; Shostenko, L.D.
A unified theory for the conductance of an infinitely long multimode quantum wire whose finite segment has randomly rough lateral boundaries is developed. It enables one to rigorously take account of all feasible mechanisms of wave scattering, both related to boundary roughness and to contacts between the wire rough section and the perfect leads within the same technical frameworks. The rough part of the conducting wire is shown to act as a mode-specific randomly modulated effective potential barrier whose height is governed essentially by the asperity slope. The mean height of the barrier, which is proportional to the average slopemore » squared, specifies the number of conducting channels. Under relatively small asperity amplitude this number can take on arbitrary small, up to zero, values if the asperities are sufficiently sharp. The consecutive channel cut-off that arises when the asperity sharpness increases can be regarded as a kind of localization, which is not related to the disorder per se but rather is of entropic or (equivalently) geometric origin. The fluctuating part of the effective barrier results in two fundamentally different types of guided wave scattering, viz., inter- and intramode scattering. The intermode scattering is shown to be for the most part very strong except in the cases of (a) extremely smooth asperities, (b) excessively small length of the corrugated segment, and (c) the asperities sharp enough for only one conducting channel to remain in the wire. Under strong intermode scattering, a new set of conducting channels develops in the corrugated waveguide, which have the form of asymptotically decoupled extended modes subject to individual solely intramode random potentials. In view of this fact, two transport regimes only are realizable in randomly corrugated multimode waveguides, specifically, the ballistic and the localized regime, the latter characteristic of one-dimensional random systems. Two kinds of localization are thus shown to coexist in waveguide-like systems with randomly corrugated boundaries, specifically, the entropic localization and the one-dimensional Anderson (disorder-driven) localization. If the particular mode propagates across the rough segment ballistically, the Fabry–Pérot-type oscillations should be observed in the conductance, which are suppressed for the mode transferred in the Anderson-localized regime.« less
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Attenuation of epsilon(sub eff) of coplanar waveguide transmission lines on silicon substrates
NASA Technical Reports Server (NTRS)
Taub, Susan R.; Young, Paul G.
1993-01-01
Attenuation and epsilon(sub eff) of Coplanar Waveguide (CPW) transmission lines were measured on Silicon substrates with resistivities ranging from 400 to greater than 30,000 ohm-cm, that have a 1000 angstrom coating of SiO2. Both attenuation and epsilon(sub eff) are given over the frequency range 5 to 40 GHz for various strip and slot widths. These measured values are also compared to the theoretical values.
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High Power Broadband Multispectral Source on a Hybrid Silicon Chip
2017-03-14
insulator (SONOI) waveguide platform are demonstrated and emit over 200 mW pulsed output power at room temperature. Improvements are made to the 1.5-µm...silicon-on-nitride-on- insulator (SONOI) waveguide platform are demonstrated and emit over 200 mW pulsed output power at room temperature. Improvements are...optical bandwidth of the erbium-doped-fiber-amplifier with densely-spaced frequency channels. To extend the spectral capacity of the Si-on- insulator
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Integrated Optical Information Processing
1988-08-01
applications in optical disk memory systems [91. This device is constructed in a glass /SiO2/Si waveguide. The choice of a Si substrate allows for the...contact mask) were formed in the photoresist deposited on all of the samples, we covered the unwanted gratings on each sample with cover glass slides...processing, let us consider TeO2 (v, = 620 m/s) as a potential substrate for applications requiring large time delays. This con- sideration is despite
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Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing
NASA Astrophysics Data System (ADS)
Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei
2017-08-01
In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.
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Wang, Qi; Iwaniczko, Eugene
2006-10-17
A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.
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Controlled electron doping into metallic atomic wires: Si(111)4×1-In
NASA Astrophysics Data System (ADS)
Morikawa, Harumo; Hwang, C. C.; Yeom, Han Woong
2010-02-01
We demonstrate the controllable electron doping into metallic atomic wires, indium wires self-assembled on the Si(111) surface, which feature one-dimensional (1D) band structure and temperature-driven metal-insulator transition. The electron filling of 1D metallic bands is systematically increased by alkali-metal adsorption, which, in turn, tunes the macroscopic property, that is, suppresses the metal-insulator transition. On the other hand, the dopant atoms induce a local lattice distortion without a band-gap opening, leading to a microscopic phase separation on the surface. The distinct bifunctional, electronic and structural, roles of dopants in different length scales are thus disclosed.
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Multi-functional laser fabrication of diamond (Conference Presentation)
NASA Astrophysics Data System (ADS)
Salter, Patrick S.; Booth, Martin J.
2017-03-01
Ultrafast laser fabrication enables micro-structuring of diamond in 3D with a range of functionality. An ultrashort pulsed beam focused beneath the diamond surface induces structural modifications which are highly localised in three dimensions. At high pulse energy, the laser breaks down the diamond lattice at focus to form a graphitic phase. We demonstrate high resolution analysis of the structural changes revealing the graphitic phase to be formed of small clusters ( 100 nm in size) of amorphous sp2 bonded carbon accompanied by localised cracking of the diamond. When the laser focus is traced through the diamond, continuous graphitic wires are created which are electrically conductive. We have used such wires to fabricate large-area 3D radiation sensors which have been employed for the detection of high energy protons. Such graphitic wires have an associated stress field and a related localised modulation of the refractive index. We have recently written combinations of graphitic tracks in diamond to engineer stress fields to give a desired refractive index distribution and form an optical waveguide. Type III waveguides are demonstrated that allow guiding of both polarization states. We also show that by reducing the laser pulse energy, it is possible to avoid complete breakdown of the diamond lattice and simply introduce an ensemble of vacancies within the focal volume. This can be used to create single coherent NV centres in diamond isolated in 3D. All these processes are improved by processing at high numerical aperture (NA), for which adaptive optics aberration correction is essential.
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Characteristics of silicon-based Sagnac optical switches using magneto-optical micro-ring array
NASA Astrophysics Data System (ADS)
Ni, Shuang; Wu, Baojian; Liu, Yawen
2018-01-01
The miniaturization and integration of optical switches are necessary for photonic switching networks and the utilization of magneto optical effects is a promising candidate. We propose a Sagnac optical switch chip based on the principle of nonreciprocal phase shift (NPS) of the magneto-optical (MO) micro-ring (MOMR) array, composed of SiO2/Si/Ce:YIG/SGGG. The MO switching function is realized by controlling the drive current in the snake-like metal microstrip circuit layered on the MOMRs. The transmission characteristics of the Sagnac MO switch chip dependent on magnetization intensity, waveguide coupling coefficient and waveguide loss are simulated. By optimizing the coupling coefficients, we design an MO switch using two serial MOMRs with a circumference of 38.37 μm, and the 3dB bandwidth and the extinction ratio are respectively up to 1.6 nm and 50dB for the waveguide loss coefficient of ?. And the switching magnetization can be further reduced by increasing the number of parallel MOMRs. The frequency response of the MO Sagnac switch is analyzed as well.
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Depth profiling of marker layers using x-ray waveguide structures
NASA Astrophysics Data System (ADS)
Gupta, Ajay; Rajput, Parasmani; Saraiya, Amit; Reddy, V. R.; Gupta, Mukul; Bernstorff, Sigrid; Amenitsch, H.
2005-08-01
It is demonstrated that x-ray waveguide structures can be used for depth profiling of a marker layer inside the guiding layer with an accuracy of better than 0.2 nm. A combination of x-ray fluorescence and x-ray reflectivity measurements can provide detailed information about the structure of the guiding layer. The position and thickness of the marker layer affect different aspects of the angle-dependent x-ray fluorescence pattern, thus making it possible to determine the structure of the marker layer in an unambiguous manner. As an example, effects of swift heavy ion irradiation on a Si/M/Si trilayer ( M=Fe , W), forming the cavity of the waveguide structure, have been studied. It is found that in accordance with the prediction of thermal spike model, Fe is much more sensitive to swift heavy ion induced modifications as compared to W, even in thin film form. However, a clear evidence of movement of the Fe marker layer towards the surface is observed after irradiation, which cannot be understood in terms of the thermal spike model alone.
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Iridium Interfacial Stack - IrIS
NASA Technical Reports Server (NTRS)
Spry, David
2012-01-01
Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the SiC chip circuitry.
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The Quantum Socket: Wiring for Superconducting Qubits - Part 1
NASA Astrophysics Data System (ADS)
McConkey, T. G.; Bejanin, J. H.; Rinehart, J. R.; Bateman, J. D.; Earnest, C. T.; McRae, C. H.; Rohanizadegan, Y.; Shiri, D.; Mariantoni, M.; Penava, B.; Breul, P.; Royak, S.; Zapatka, M.; Fowler, A. G.
Quantum systems with ten superconducting quantum bits (qubits) have been realized, making it possible to show basic quantum error correction (QEC) algorithms. However, a truly scalable architecture has not been developed yet. QEC requires a two-dimensional array of qubits, restricting any interconnection to external classical systems to the third axis. In this talk, we introduce an interconnect solution for solid-state qubits: The quantum socket. The quantum socket employs three-dimensional wires and makes it possible to connect classical electronics with quantum circuits more densely and accurately than methods based on wire bonding. The three-dimensional wires are based on spring-loaded pins engineered to insure compatibility with quantum computing applications. Extensive design work and machining was required, with focus on material quality to prevent magnetic impurities. Microwave simulations were undertaken to optimize the design, focusing on the interface between the micro-connector and an on-chip coplanar waveguide pad. Simulations revealed good performance from DC to 10 GHz and were later confirmed against experimental measurements.
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NASA Astrophysics Data System (ADS)
Osetkovsky, I. V.; Kozyrev, N. A.; Kryukov, R. E.; Usoltsev, A. A.; Gusev, A. I.
2017-09-01
The effect of introduction of cobalt in the charge of the flux cored wire of Fe-C-Si-Mn-Cr-Ni-Mo-V system operating under abrasive and abrasive-shock loads is studied. In the laboratory conditions samples of flux cored wires were made, deposition was performed, the effect of cobalt on the hardness and the degree of wear was evaluated, metallographic studies were carried out. The influence of cobalt introduced into the charge of the flux cored wire of Fe-C-Si-Mn-Cr-Ni-Mo-V system on the structure, nature of nonmetallic inclusions, hardness and wear resistance of the weld metal was studied. In the laboratory conditions samples flux cored wire were made using appropriate powdered materials. As a carbon-fluorine-containing material dust from gas cleaning units of aluminum production was used. In the course of the study the chemical composition of the weld metal was determined, metallographic analysis was performed, mechanical properties were determined. As a result of the metallographic analysis the size of the former austenite grain, martensite dispersion in the structure of the weld metal, the level of contamination with its nonmetallic inclusions were established.
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1988-08-11
and LiChrospher Si 4000 were obtained from Applied Science Laboratories, Inc. LiChrospher Si 100 was obtained from Alltech Assoc. The surface areas...Z U) w I < 0 The earliest attempt to take advantage of evanescent wave interactions in an optical waveguide to detect immunological reactions was made
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Chemical Sensors Based on Optical Ring Resonators
NASA Technical Reports Server (NTRS)
Homer, Margie; Manfreda, Allison; Mansour, Kamjou; Lin, Ying; Ksendzov, Alexander
2005-01-01
Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong evanescent-wave coupling between the outer polymer layer and the electromagnetic field propagating along the waveguide core. By virtue of this coupling, the chemically induced change in index of refraction of the polymer causes a measurable shift in the resonance peaks of the ring. In a prototype that has been used to demonstrate the feasibility of this sensor concept, the ring resonator is a dielectric optical waveguide laid out along a closed path resembling a racetrack (see Figure 1). The prototype was fabricated on a silicon substrate by use of standard techniques of thermal oxidation, chemical vapor deposition, photolithography, etching, and spin coating. The prototype resonator waveguide features an inner cladding of SiO2, a core of SixNy, and a chemical-sensing outer cladding of ethyl cellulose. In addition to the ring Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong evanescent-wave coupling between the outer polymer layer and the electromagnetic field propagating along the waveguide core. By virtue of this coupling, the chemically induced change in index of refraction of the polymer causes a measurable shift in the resonance peaks of the ring. In a prototype that has been used to demonstrate the feasibility of this sensor concept, the ring resonator is a dielectric optical waveguide laid out along a closed path resembling a racetrack (see Figure 1). The prototype was fabricated on a silicon substrate by use of standard techniques of thermal oxidation, chemical vapor deposition, photolithography, etching, and spin coating. The prototype resonator waveguide features an inner cladding of SiO2, a core of SixNy, and a chemical-sensing outer cladding of ethyl cellulose. In addition to the ring res
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NASA Astrophysics Data System (ADS)
Weisenbach, Lori Ann
An experimental study of the processing and attenuation characteristics of solution derived, thin film, planar waveguides was made. In this study, the densification and attenuation characteristics of a variety of compositions were compared. To insure that the effects measured reflected compositional differences and not processing artifacts, guidelines for the reproducible fabrication of optical quality layers, irrespective of composition, were established. A broad range of compositions were prepared and an effort was made to keep the various solution syntheses as simple and similar as possible. The densification and attenuation of binary SiO _2-TiO_2 compositions was measured, then compared to the densification and attenuation of SiO_2-TiO_2 -R_{rm x}O _{rm y} (where R = Al or Zn) ternary compositions. Film densification was not strongly dependent upon composition, and was successfully modelled using the Lorentz-Lorenz relation, assuming the open volume in the undensified films were filled with adsorbed water. The attenuation measured at 632.8 nm did not vary with composition, except for the Zn ternary samples. Waveguides with losses of <1dB/cm could be fabricated from all other compositions. Waveguide attenuation was measured for films of different thickness, and compared to modelled predictions. The attenuation increased as layer thickness decreased, suggesting the predominance of the surface scattering contribution. To confirm that absorption losses were negligible, the wavelength dependence of the waveguides was measured. The wavelength dependence varied with composition, suggesting the absorption varied with composition. Possible mechanisms of absorption in the waveguides were discussed; the interaction of the atmosphere with the film structure is proposed as the cause of the deterioration. Film development for the binary SiO_2 -TiO_2 films was also studied as a function of increased firing time at 500^ circC. Multiple firings at 500^ circC increased the film density and the resistance to deterioration, but also increased the surface roughness of the films. Increased surface roughness, increased the scattering losses measured for the guide. The application of solution derived thin films was demonstrated with the successful fabrication of a novel optical device. The fabrication of the Single Leakage -Channel Grating Coupler illustrated specific design tolerances could be met and the resulting device performance near the theoretical maximum.
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SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics
NASA Astrophysics Data System (ADS)
El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado
2018-02-01
In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).
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A nanowaveguide platform for collective atom-light interaction
NASA Astrophysics Data System (ADS)
Meng, Y.; Lee, J.; Dagenais, M.; Rolston, S. L.
2015-08-01
We propose a nanowaveguide platform for collective atom-light interaction through evanescent field coupling. We have developed a 1 cm-long silicon nitride nanowaveguide can use evanescent fields to trap and probe an ensemble of 87Rb atoms. The waveguide has a sub-micrometer square mode area and was designed with tapers for high fiber-to-waveguide coupling efficiencies at near-infrared wavelengths (750 nm to 1100 nm). Inverse tapers in the platform adiabatically transfer a weakly guided mode of fiber-coupled light into a strongly guided mode with an evanescent field to trap atoms and then back to a weakly guided mode at the other end of the waveguide. The coupling loss is -1 dB per facet (˜80% coupling efficiency) at 760 nm and 1064 nm, which is estimated by a propagation loss measurement with waveguides of different lengths. The proposed platform has good thermal conductance and can guide high optical powers for trapping atoms in ultra-high vacuum. As an intermediate step, we have observed thermal atom absorption of the evanescent component of a nanowaveguide and have demonstrated the U-wire mirror magneto-optical trap that can transfer atoms to the proximity of the surface.
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Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)
NASA Astrophysics Data System (ADS)
Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.
2018-01-01
Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.
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Wide-band polarization controller for Si photonic integrated circuits.
Velha, P; Sorianello, V; Preite, M V; De Angelis, G; Cassese, T; Bianchi, A; Testa, F; Romagnoli, M
2016-12-15
A circuit for the management of any arbitrary polarization state of light is demonstrated on an integrated silicon (Si) photonics platform. This circuit allows us to adapt any polarization into the standard fundamental TE mode of a Si waveguide and, conversely, to control the polarization and set it to any arbitrary polarization state. In addition, the integrated thermal tuning allows kilohertz speed which can be used to perform a polarization scrambler. The circuit was used in a WDM link and successfully used to adapt four channels into a standard Si photonic integrated circuit.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.
Here, we demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneathmore » an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.« less
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NASA Astrophysics Data System (ADS)
Hinkey, Robert T.; Tian, Zhaobing; Yang, Rui Q.; Mishima, Tetsuya D.; Santos, Michael B.
2011-08-01
Noninvasive infrared reflectance measurements have been explored as a method for studying the optical properties of Si-doped cladding layers of plasmon waveguide interband cascade lasers. Measurements and theoretical simulations of the reflectance spectra were carried out on both the laser structures themselves, as well as highly doped InAs films grown on GaAs substrates. We have found that there is a sharp drop in the signal of the reflectance spectrum for p-polarized light oscillating near the plasma frequency. This is a manifestation of the so-called Berreman effect, which occurs at frequencies where the dielectric function approaches zero. This is distinct from the plasma edge feature seen in the reflectance spectrum of thick samples. The plasma frequencies of the highly doped layers were obtained by identifying the Berreman feature in the measured spectrum and fitting the spectrum to a modeled curve. Using a model for the effective mass, we were able to obtain measurements of the conduction electron concentration (in a range from 1018 to 1019 cm-3) in the waveguide cladding layers with values that were in good agreement with those found using Hall effect and SIMS measurements. The reflectance data was effectively used to achieve better calibration of the Si-doping during the growth of the n++-type InAs layers in the plasmon waveguide laser structures.
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Electrical properties of sub-100 nm SiGe nanowires
NASA Astrophysics Data System (ADS)
Hamawandi, B.; Noroozi, M.; Jayakumar, G.; Ergül, A.; Zahmatkesh, K.; Toprak, M. S.; Radamson, H. H.
2016-10-01
In this study, the electrical properties of SiGe nanowires in terms of process and fabrication integrity, measurement reliability, width scaling, and doping levels were investigated. Nanowires were fabricated on SiGe-on oxide (SGOI) wafers with thickness of 52 nm and Ge content of 47%. The first group of SiGe wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam (FIB) to any desired nanometer range down to 60 nm. The other nanowire group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography (STL). It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms. The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method. Project support by the Swedish Foundation for Strategic Research “SSF” (No. EM-011-0002) and the Scientific and Technological Research Council of Turkey (No. TÜBİTAK).
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Tunable filters based on an SOI nano-wire waveguide micro ring resonator
NASA Astrophysics Data System (ADS)
Shuai, Li; Yuanda, Wu; Xiaojie, Yin; Junming, An; Jianguang, Li; Hongjie, Wang; Xiongwei, Hu
2011-08-01
Micro ring resonator (MRR) filters based on a silicon on insulator (SOI) nanowire waveguide are fabricated by electron beam photolithography (EBL) and inductive coupled plasma (ICP) etching technology. The cross-section size of the strip waveguides is 450 × 220 nm2, and the bending radius of the micro ring is around 5 μm. The test results from the tunable filter based on a single ring show that the free spectral range (FSR) is 16.8 nm and the extinction ratio (ER) around the wavelength 1550 nm is 18.1 dB. After thermal tuning, the filter's tuning bandwidth reaches 4.8 nm with a tuning efficiency of 0.12 nm/°C Meanwhile, we fabricated and studied multi-channel filters based on a single ring and a double ring. After measurement, we drew the following conclusions: during the signal transmission of multi-channel filters, crosstalk exists mainly among different transmission channels and are fairly distinct when there are signals input to add ports.
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A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz
NASA Technical Reports Server (NTRS)
Brown, E. R.; Parker, C. D.; Molvar, K. M.; Calawa, A. R.; Manfra, M. J.
1992-01-01
We have fabricated and characterized a quasioptically stabilized resonant-tunneling-diode (RTD) oscillator having attractive performance characteristics for application as a radiometric local oscillator. The fundamental frequency of the oscillator is tunable from about 200 to 215 GHz, the instantaneous linewidth is between 10 and 20 kHz, and the output power across the tuning band is about 50 micro-W. The narrow linewidth and fine tuning of the frequency are made possible by a scanning semiconfocal open cavity which acts as the high-Q resonator for the oscillator. The cavity is compact, portable, and insensitive to vibration and temperature variation. The total dc power consumption (RTD plus bias supply) is only 10 mW. The present oscillator provides the highest power obtained to date from an RTD above 200 GHz. We attribute this partly to the use of the quasioptical resonator, but primarily to the quality of the RTD. It is fabricated from the In(0.53)Ga(0.47)As/AlAs materials system, which historically has yielded the best overall resonant-tunneling characteristics of any material system. The RTD active area is 4 sq microns, and the room-temperature peak current density and peak-to-valley current ratio are 2.5x10(exp 5) A cm(exp -2) and 9, respectively. The RTD is mounted in a WR-3 standard-height rectangular waveguide and is contacted across the waveguide by a fine wire that protrudes through a via hole in a Si3N4 'honeycomb' overlayer. We estimate that the theoretical maximum frequency of oscillation of this RTD is approximately 1.1 THz, and that scaled-down versions of the same quasioptical oscillator design should operate in a fundamental mode up to frequencies of at least 500 GHz.
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Coupling mid-infrared light from a photonic crystal waveguide to metallic transmission lines
DOE Office of Scientific and Technical Information (OSTI.GOV)
Blanco-Redondo, Andrea, E-mail: andrea.blanco@tecnalia.com, E-mail: r.hillenbrand@nanogune.eu; Dpto. Electronica y Telecom., E.T.S. Ingeniería Bilbao, UPV/EHU, Alda. Urquijo, 48103 Bilbao, Bizkaia; Sarriugarte, Paulo
2014-01-06
We propose and theoretically study a hybrid structure consisting of a photonic crystal waveguide (PhC-wg) and a two-wire metallic transmission line (TL), engineered for efficient transfer of mid-infrared (mid-IR) light between them. An efficiency of 32% is obtained for the coupling from the transverse magnetic (TM) photonic mode to the symmetric mode of the TL, with a predicted intensity enhancement factor of 53 at the transmission line surface. The strong coupling is explained by the small phase velocity mismatch and sufficient spatial overlapping between the modes. This hybrid structure could find applications in highly integrated mid-IR photonic-plasmonic devices for biologicalmore » and gas sensing, among others.« less
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Yurtsever, Günay; Považay, Boris; Alex, Aneesh; Zabihian, Behrooz; Drexler, Wolfgang; Baets, Roel
2014-01-01
Optical coherence tomography (OCT) is a noninvasive, three-dimensional imaging modality with several medical and industrial applications. Integrated photonics has the potential to enable mass production of OCT devices to significantly reduce size and cost, which can increase its use in established fields as well as enable new applications. Using silicon nitride (Si3N4) and silicon dioxide (SiO2) waveguides, we fabricated an integrated interferometer for spectrometer-based OCT. The integrated photonic circuit consists of four splitters and a 190 mm long reference arm with a foot-print of only 10 × 33 mm2. It is used as the core of a spectral domain OCT system consisting of a superluminescent diode centered at 1320 nm with 100 nm bandwidth, a spectrometer with 1024 channels, and an x-y scanner. The sensitivity of the system was measured at 0.25 mm depth to be 65 dB with 0.1 mW on the sample. Using the system, we imaged human skin in vivo. With further optimization in design and fabrication technology, Si3N4/SiO2 waveguides have a potential to serve as a platform for passive photonic integrated circuits for OCT. PMID:24761288
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NASA Astrophysics Data System (ADS)
Martínez de Mendívil, J.; Sola, D.; Vázquez de Aldana, J. R.; Lifante, G.; de Aza, A. H.; Pena, P.; Peña, J. I.
2015-01-01
We report on tubular cladding optical waveguides fabricated in Neodymium doped Wollastonite-Tricalcium Phosphate glass in the eutectic composition. The glass samples were prepared by melting the eutectic powder mixture in a Pt-Rh crucible at 1600 °C and pouring it in a preheated brass mould. Afterwards, the glass was annealed to relieve the inner stresses. Cladding waveguides were fabricated by focusing beneath the sample surface using a pulsed Ti:sapphire laser with a pulsewidth of 120 fs working at 1 kHz. The optical properties of these waveguides have been assessed in terms of near-field intensity distribution and transmitted power, and these results have been compared to previously reported waveguides with double-line configuration. Optical properties have also been studied as function of the temperature. Heat treatments up to 700 °C were carried out to diminish colour centre losses where waveguide's modes and transmitted power were compared in order to establish the annealing temperature at which the optimal optical properties were reached. Laser experiments are in progress to evaluate the ability of the waveguides for 1064 nm laser light generation under 800 nm optical pumping.
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High-Performance Flexible Waveguiding Photovoltaics
Chou, Chun-Hsien; Chuang, Jui-Kang; Chen, Fang-Chung
2013-01-01
The use of flat-plane solar concentrators is an effective approach toward collecting sunlight economically and without sun trackers. The optical concentrators are, however, usually made of rigid glass or plastics having limited flexibility, potentially restricting their applicability. In this communication, we describe flexible waveguiding photovoltaics (FWPVs) that exhibit high optical efficiencies and great mechanical flexibility. We constructed these FWPVs by integrating poly-Si solar cells, a soft polydimethylsiloxane (PDMS) waveguide, and a TiO2-doped backside reflector. Optical microstructures that increase the light harvesting ability of the FWPVs can be fabricated readily, through soft lithography, on the top surface of the PDMS waveguide. Our optimized structure displayed an optical efficiency of greater than 42% and a certified power conversion efficiency (PCE) of 5.57%, with a projected PCE as high as approximately 18%. This approach might open new avenues for the harvesting of solar energy at low cost with efficient, mechanically flexible photovoltaics. PMID:23873225
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Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters
NASA Technical Reports Server (NTRS)
Ponchak, George E.; Simons, Rainee N.; Scardelletti, Maximillian; Varaljay, Nicholas C.
2000-01-01
Switches with low insertion loss and high isolation are required for switched line phase shifters and the transmit/receive switch at the front end of communication systems. A Finite Ground Coplanar (FGC) waveguide capacitive, shunt MEMS switch has been implemented on high resistivity Si. The switch has demonstrated an insertion loss of less than 0.3 dB and a return loss greater than 15 dB from 10 to 20, GHz. The switch design, fabrication, and characteristics are presented.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Kim, Sung-Yup; Ostadhossein, Alireza; van Duin, Adri C. T.
2016-01-01
Surface coatings as artificial solid electrolyte interphases have been actively pursued as an effective way to improve the cycle efficiency of nanostructured Si electrodes for high energy density lithium ion batteries, where the mechanical stability of the surface coatings on Si is as critical as Si itself.
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Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing.
Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei
2017-08-10
In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H 2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO 2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 10 3 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.
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Ex-situ manufacturing of SiC-doped MgB2 used for superconducting wire in medical device applications
NASA Astrophysics Data System (ADS)
Herbirowo, Satrio; Imaduddin, Agung; Sofyan, Nofrijon; Yuwono, Akhmad Herman
2017-02-01
Magnesium diboride (MgB2) is a superconductor material with a relatively high critical temperature. Due to its relatively high critical temperature, this material is promising and has the potential to replace Nb3Sn for wire superconducting used in many medical devices. In this work, nanoparticle SiC-doped MgB2 superconducting material has been fabricated through an ex-situ method. The doping of nanoparticle SiC by 10 and 15 wt% was conducted to analyze its effect on specific resistivity of MgB2. The experiment was started by weighing a stoichiometric amount of MgB2 and nanoparticles SiC. Both materials were mixed and grounded for 30 minutes by using an agate mortar. The specimens were then pressed into a 6 mm diameter stainless steel tube, which was then reduced until 3 mm through a wire drawing method. X-ray diffraction analysis was conducted to confirm the phase, whereas the superconductivity of the specimens was analyzed by using resistivity measurement under cryogenic magnetic system. The results indicated that the commercial MgB2 showed a critical temperature of 37.5 K whereas the SiC doped MgB2 has critical temperature of 38.3 K.
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Single-mode plasmonic waveguiding properties of metal nanowires with dielectric substrates.
Wang, Yipei; Ma, Yaoguang; Guo, Xin; Tong, Limin
2012-08-13
Single-mode plasmonic waveguiding properties of metal nanowires with dielectric substrates are investigated using a finite-element method. Au and Ag are selected as plasmonic materials for nanowire waveguides with diameters down to 5-nm-level. Typical dielectric materials with relatively low to high refractive indices, including magnesium fluoride (MgF2), silica (SiO2), indium tin oxide (ITO) and titanium dioxide (TiO2), are used as supporting substrates. Basic waveguiding properties, including propagation constants, power distributions, effective mode areas, propagation distances and losses are obtained at the typical plasmonic resonance wavelength of 660 nm. Compared to that of a freestanding nanowire, the mode area of a substrate-supported nanowire could be much smaller while maintaining an acceptable propagation length. For example, the mode area and propagation length of a 100-nm-diameter Ag nanowire with a MgF2 substrate are about 0.004 μm2 and 3.4 μm, respectively. The dependences of waveguiding properties on geometric and material parameters of the nanowire-substrate system are also provided. Our results may provide valuable references for waveguiding dielectric-supported metal nanowires for practical applications.
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Conductive-probe atomic force microscopy characterization of silicon nanowire
2011-01-01
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated. PMID:21711623
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NASA Astrophysics Data System (ADS)
Ghosh, Subhabrata; N, Shivakiran Bhaktha B.
2018-06-01
Eu-doped 70SiO2–23HfO2–7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦C, both, Eu2+ as well as Eu3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu3+ to Eu2+ takes place in such ZnO/HfO2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 65d \\to 4f 7 energy level transition of Eu2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm‑1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO2–23HfO2–7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.
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Ghosh, Subhabrata; Bhaktha B N, Shivakiran
2018-06-01
Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO 2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦ C, both, Eu 2+ as well as Eu 3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦ C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu 3+ to Eu 2+ takes place in such ZnO/HfO 2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 6 5d [Formula: see text] 4f 7 energy level transition of Eu 2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm -1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.
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1993-05-14
Lent 6 I We have studied transmission in quantum waveguides in the presence of resonant cavities. This work was inspired by our previous modeling of the...conductance of resonantly- coupled quantum wire systems. We expected to find qualitatively the same phenomena as in the much studied case of double...transmission peaks does not give the location of the quasi-bound3 states, like for double-barrier resonant tunneling. In current work, we study
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Compact plasmonic memristor with high extinction efficiency
NASA Astrophysics Data System (ADS)
Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Zhang, Guangfu
2017-10-01
Here we present a plasmonic memristor operated at the telecommunication wavelength with compact size (0.61 μm), and high extinction efficiency (4.6 dB/μm). The plasmonic memristor consists of a triangle-shaped metal taper mounted on the top of a Si waveguide with rational doping in the area below the apex of the taper. This device can achieve vertical coupling of light energy from the Si waveguide to the plasmonic region and at the same time concentrates the plasmon to the apex of the metal taper. Moreover, the area with concentrated plasmon is overlap with that where the memristive behavior occurs due to the formation/removal of the metallic nanofilament. As a result, the highly distinct transmission induced by the switching of the plasmonic memristor can be achieved due to the maximized interaction between the plasmon and the filament.
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Ultrashort hybrid metal-insulator plasmonic directional coupler.
Noghani, Mahmoud Talafi; Samiei, Mohammad Hashem Vadjed
2013-11-01
An ultrashort plasmonic directional coupler based on the hybrid metal-insulator slab waveguide is proposed and analyzed at the telecommunication wavelength of 1550 nm. It is first analyzed using the supermode theory based on mode analysis via the transfer matrix method in the interaction region. Then the 2D model of the coupler, including transition arms, is analyzed using a commercial finite-element method simulator. The hybrid slab waveguide is composed of a metallic layer of silver and two dielectric layers of silica (SiO2) and silicon (Si). The coupler is optimized to have a minimum coupling length and to transfer maximum power considering the layer thicknesses as optimization variables. The resulting coupling length in the submicrometer region along with a noticeable power transfer efficiency are advantages of the proposed coupler compared to previously reported plasmonic couplers.
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Processing and optical properties of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides
NASA Astrophysics Data System (ADS)
Xiang, Qing; Zhou, Yan; Ooi, Boon Siew; Lam, Yee Loy; Chan, Yuen Chuen; Kam, Chan Hin
2000-05-01
We report here the processing and optical characterization of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides deposited on SOS substrates by the sol-gel route combined with spin-coating and rapid thermal annealing. The recipes used for preparing the solutions by sol-gel route are in mole ratio of 93SiO2:20AlO1.5: x ErO1.5. In order to verify the residual OH content in the films, FTIR spectra were measured and the morphology of the material by the XRD analysis. Five 2-layer films annealed at a maximum temperature of 500 degrees C, 700 degrees C, 900 degrees, 1000 degrees C, 1100 degrees C respectively were fabricated on silicon. The FTIR and XRD curves show that annealing at 1050 degrees C for 15s effectively removes the OH in the materia and keeps the material amorphous. The propagation loss of the planar waveguides was measured by using the method based on scattering in measurements and the result was obtained to be 1.54dB/cm. The fluorescence spectra were measured with 514nm wavelength of Ar+ laser by directly shining the pump beam on the film instead of prism coupling. The results show that the 1 mole Nd3+ content recipe has the strongest emission efficiency among the four samples investigated.
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Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits.
Dai, Daoxin; Mao, Mao
2015-11-02
An inverse taper on silicon is proposed and designed to realize an efficient mode converter available for the connection between multimode silicon nanophotonic integrated circuits and few-mode fibers. The present mode converter has a silicon-on-insulator inverse taper buried in a 3 × 3μm(2) SiN strip waveguide to deal with not only for the fundamental mode but also for the higher-order modes. The designed inverse taper enables the conversion between the six modes (i.e., TE(11), TE(21), TE(31), TE(41), TM(11), TM(12)) in a 1.4 × 0.22μm(2) multimode SOI waveguide and the six modes (like the LP(01), LP(11a), LP(11b) modes in a few-mode fiber) in a 3 × 3μm(2) SiN strip waveguide. The conversion efficiency for any desired mode is higher than 95.6% while any undesired mode excitation ratio is lower than 0.5%. This is helpful to make multimode silicon nanophotonic integrated circuits (e.g., the on-chip mode (de)multiplexers developed well) available to work together with few-mode fibers in the future.
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Si-based optical I/O for optical memory interface
NASA Astrophysics Data System (ADS)
Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee
2012-01-01
Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.
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Joon Kim, Kyoung; Bar-Cohen, Avram; Han, Bongtae
2012-02-20
This study reports both analytical and numerical thermal-structural models of polymer Bragg grating (PBG) waveguides illuminated by a light emitting diode (LED). A polymethyl methacrylate (PMMA) Bragg grating (BG) waveguide is chosen as an analysis vehicle to explore parametric effects of incident optical powers and substrate materials on the thermal-structural behavior of the BG. Analytical models are verified by comparing analytically predicted average excess temperatures, and thermally induced axial strains and stresses with numerical predictions. A parametric study demonstrates that the PMMA substrate induces more adverse effects, such as higher excess temperatures, complex axial temperature profiles, and greater and more complicated thermally induced strains in the BG compared with the Si substrate. © 2012 Optical Society of America
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The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors
2013-10-01
infrared applications; SiGeSn heterostructure photonics; group IV plasmonics with silicides , germanicides, doped Si, Ge or GeSn; Franz-Keldysh...SPP waveguide in which localized silicide or germanicide “conductors” are introduced to give local plasmonic confinement. Therefore, guided-wave...reconfigurable integrated optoelectronics, electro-optical logic in silicon, silicides for group IV plasmonics, reviews of third-order nonlinear optical
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Persichetti, Luca; Sgarlata, Anna; Mori, Stefano; Notarianni, Marco; Cherubini, Valeria; Fanfoni, Massimo; Motta, Nunzio; Balzarotti, Adalberto
2014-01-01
We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain. 81.07.Gf; 68.35.bg; 68.35.bj; 62.23.Eg.
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Optical clock distribution in supercomputers using polyimide-based waveguides
NASA Astrophysics Data System (ADS)
Bihari, Bipin; Gan, Jianhua; Wu, Linghui; Liu, Yujie; Tang, Suning; Chen, Ray T.
1999-04-01
Guided-wave optics is a promising way to deliver high-speed clock-signal in supercomputer with minimized clock-skew. Si- CMOS compatible polymer-based waveguides for optoelectronic interconnects and packaging have been fabricated and characterized. A 1-to-48 fanout optoelectronic interconnection layer (OIL) structure based on Ultradel 9120/9020 for the high-speed massive clock signal distribution for a Cray T-90 supercomputer board has been constructed. The OIL employs multimode polymeric channel waveguides in conjunction with surface-normal waveguide output coupler and 1-to-2 splitters. Surface-normal couplers can couple the optical clock signals into and out from the H-tree polyimide waveguides surface-normally, which facilitates the integration of photodetectors to convert optical-signal to electrical-signal. A 45-degree surface- normal couplers has been integrated at each output end. The measured output coupling efficiency is nearly 100 percent. The output profile from 45-degree surface-normal coupler were calculated using Fresnel approximation. the theoretical result is in good agreement with experimental result. A total insertion loss of 7.98 dB at 850 nm was measured experimentally.
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NASA Astrophysics Data System (ADS)
Osowski, Mark Louis
With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.
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Low-reflective wire-grid polarizers with absorptive interference overlayers.
Suzuki, Motofumi; Takada, Akio; Yamada, Takatoshi; Hayasaka, Takashi; Sasaki, Kouji; Takahashi, Eiji; Kumagai, Seiji
2010-04-30
Wire-grid (WG) polarizers with low reflectivity for visible light have been successfully developed. We theoretically consider the optical properties of simple sandwich structures of absorptive layer/transparent layer (gap layer)/high-reflective mirrors and found that it is possible to develop an antireflection (AR) coating owing to the interference along with the absorption in the absorptive layer. A wide variety of materials can be used for AR coatings by tuning the thicknesses of both the absorptive and the gap layers. This AR concept has been applied to reduce the reflectance of WG polarizers of Al. FeSi(2) as an absorptive layer has been deposited by the glancing angle deposition technique immediately on the top of Al wires covered with a thin SiO(2) layer as a gap layer. For the optimum combination of the thicknesses of FeSi(2) and SiO(2), the reflectance becomes lower than a few per cent, independent of the polarization, whereas the transmission polarization properties remain good. Because low-reflective (LR) WG polarizers are completely composed of inorganic materials, they are useful for applications requiring high-temperature durability such as liquid crystal projection displays.
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Structure and Growth of Quasi One-Dimensional YSi2 Nanophases on Si(100)
Iancu, V.; Kent, P.R.C.; Hus, S.; Hu, H.; Zeng, C.G.; Weitering, H.H.
2013-01-01
Quasi one-dimensional YSi2 nanostructures are formed via self-assembly on the Si(100) surface. These epitaxial nanowires are metastable and their formation strongly depends on the growth parameters. Here, we explore the various stages of yttrium silicide formation over a range of metal coverages and growth temperatures, and establish a rudimentary phase diagram for these novel and often coexisting nanophases. In addition to previously identified stoichiometric wires, we identify several new nanowire systems. These nanowires exhibit a variety of surface reconstructions, which sometimes coexist on a single wire. From a comparison of scanning tunneling microcopy images, tunneling spectra, and first-principles density functional theory calculations, we determine that these surface reconstructions arise from local orderings of yttrium vacancies. Nanowires often agglomerate into nanowire bundles, the thinnest of which are formed by single wire pairs. The calculations show that such bundles are energetically favored compared to well-separated single wires. Thicker bundles are formed at slightly higher temperature. They extend over several microns, forming a robust network of conducting wires that could possibly be employed in nanodevice applications. PMID:23221350
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Process technologies of MPACVD planar waveguide devices and fiber attachment
NASA Astrophysics Data System (ADS)
Li, Cheng-Chung; Qian, Fan; Boudreau, Robert A.; Rowlette, John R., Sr.; Bowen, Terry P.
1999-03-01
Optical circuits based on low-loss glass waveguide on silicon are a practical and promising approach to integrate different functional components. Fiber attachment to planar waveguide provides a practical application for optical communications. Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) produces superior quality, low birefringence, low-loss, planar waveguides for integrated optical devices. Microwave plasma initiates the chemical vapor of SiCl4, GeCl4 and oxygen. A Ge-doped silica layer is thus deposited with a compatible high growth rate (i.e. 0.4 - 0.5 micrometer/min). Film properties are based on various parameters, such as chemical flow rates, chamber pressure and temperature, power level and injector design. The resultant refractive index can be varied between 1.46 (i.e. pure silica) and 1.60 (i.e. pure germania). Waveguides can be fabricated with any desired refractive index profile. Standard photolithography defines the waveguide pattern on a mask layer. The core layer is removed by plasma dry etch which has been investigated by both reactive ion etch (RIE) and inductively coupled plasma (ICP) etch. Etch rates of 3000 - 4000 angstrom/min have been achieved using ICP compared to typical etch rates of 200 - 300 angstrom/min using conventional RIE. Planar waveguides offer good mode matching to optical fiber. A polished fiber end can be glued to the end facet of waveguide with a very low optical coupling loss. In addition, anisotropic etching of silicon V- grooves provides a passive alignment capability. Epoxy and solder were used to fix the fiber within the guiding groove. Several designs of waveguide-fiber attachment will be discussed.
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Fabrication of Buried Nanochannels From Nanowire Patterns
NASA Technical Reports Server (NTRS)
Choi, Daniel; Yang, Eui-Hyeok
2007-01-01
A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.
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NASA Astrophysics Data System (ADS)
Yoon, Jeong-Yeol; Heinze, Brian C.; Gamboa, Jessica; You, David J.
2009-05-01
Virus antigens of avian influenza subtype H3N2 were detected on two different microfluidic platforms: microchannel and droplet. Latex immunoagglutination assays were performed using 920-nm highly carboxylated polystyrene beads that are conjugated with antibody to avian influenza virus. The bead suspension was merged with the solutions of avian influenza virus antigens in a Y-junction of a microchannel made by polydimethylsiloxane soft lithography. The resulting latex immunoagglutinations were measured with two optical fibers in proximity setup to detect 45° forward light scattering. Alternatively, 10 μL droplets of a bead suspension and an antigen solution were merged on a superhydrophobic surface (water contact angle = 155°), whose movement was guided by a metal wire, and 180° back light scattering is measured with a backscattering optical probe. Detection limits were 0.1 pg mL-1 for both microchannel with proximity fibers and droplet microfluidics, thanks to the use of micro-positioning stages to help generate reproducible optical signals. Additionally, optical waveguide was tested by constructing optical waveguide channels (filled with mineral oil) within a microfluidic device to detect the same light scattering. Detection limit was 0.1 ng mL-1 for an optical waveguide device, with a strong potential of improvement in the near future. The use of optical waveguide enabled smaller device setup, easier operation, smaller standard deviations and broader linear range of assay than proximity fiber microchannel and droplet microfluidics. Total assay time was less than 10 min.
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Park, Seungil; Parida, Bhaskar; Kim, Keunjoo
2013-05-01
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures. The film samples showed the different infrared absorption spectra of 2,000 and 2,100 cm(-1), which are corresponding to the chemical bonds of SiH and SiH2, respectively. The a-Si:H sample with the relatively high silane concentration provides the absorption peak of SiH bond, but the microc-Si:H sample with the relatively low silane concentration provides the absorption peak of SiH2 bond as well as SiH bond. Furthermore, the microc-Si:H sample showed the Raman spectral shift of 520 cm(-1) for crystalline phase Si bonds as well as the 480 cm(-1) for the amorphous phase Si bonds. These bonding structures are very consistent with the further analysis of the long-wavelength photoconduction tail and the formation of nanocrystalline Si structures. The microc-Si:H thin film solar cell has the photovoltaic behavior of open circuit voltage similar to crystalline silicon thin film solar cell, indicating that microc-Si:H thin film with the mixed phase of amorphous and nanocrystalline structures show the carrier transportation through the channel of nanocrystallites.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Martínez de Mendívil, J., E-mail: jon.martinez@uam.es; Lifante, G.; Sola, D.
2015-01-28
We report on tubular cladding optical waveguides fabricated in Neodymium doped Wollastonite-Tricalcium Phosphate glass in the eutectic composition. The glass samples were prepared by melting the eutectic powder mixture in a Pt-Rh crucible at 1600 °C and pouring it in a preheated brass mould. Afterwards, the glass was annealed to relieve the inner stresses. Cladding waveguides were fabricated by focusing beneath the sample surface using a pulsed Ti:sapphire laser with a pulsewidth of 120 fs working at 1 kHz. The optical properties of these waveguides have been assessed in terms of near-field intensity distribution and transmitted power, and these results have been comparedmore » to previously reported waveguides with double-line configuration. Optical properties have also been studied as function of the temperature. Heat treatments up to 700 °C were carried out to diminish colour centre losses where waveguide's modes and transmitted power were compared in order to establish the annealing temperature at which the optimal optical properties were reached. Laser experiments are in progress to evaluate the ability of the waveguides for 1064 nm laser light generation under 800 nm optical pumping.« less
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Chalcogenide glass waveguide-integrated black phosphorus mid-infrared photodetectors
NASA Astrophysics Data System (ADS)
Deckoff-Jones, Skylar; Lin, Hongtao; Kita, Derek; Zheng, Hanyu; Li, Duanhui; Zhang, Wei; Hu, Juejun
2018-04-01
Black phosphorus (BP) is a promising 2D material that has unique in-plane anisotropy and a 0.3 eV direct bandgap, making it an attractive material for mid-IR photodetectors. So far, waveguide integrated BP photodetectors have been limited to the near-IR on top of Si waveguides that are unable to account for BP’s crystalline orientation. In this work, we employ mid-IR transparent chalcogenide glass (ChG) both as a broadband mid-IR transparent waveguiding material to enable waveguide-integration of BP detectors, and as a passivation layer to prevent BP degradation during device processing as well as in ambient atmosphere post-fabrication. Our ChG-on-BP approach not only leads to the first demonstration of mid-IR waveguide-integrated BP detectors, but also allows us to fabricate devices along different crystalline axes of BP to investigate, for the first time, the impact of in-plane anisotropy on photoresponse of waveguide-integrated devices. The best device exhibits responsivity up to 40 mA W-1 and noise equivalent power as low as 30 pW Hz-1/2 at 2185 nm wavelength. We also found that photodetector responsivities changed by an order of magnitude with different BP orientations. This work validates BP as an effective photodetector material in the mid-IR, and demonstrates the power of the glass-on-2D-material platform for prototyping of 2D material photonic devices.
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New insights into ETS-10 and titanate quantum wire: a comprehensive characterization.
Jeong, Nak Cheon; Lee, Young Ju; Park, Jung-Hyun; Lim, Hyunjin; Shin, Chae-Ho; Cheong, Hyeonsik; Yoon, Kyung Byung
2009-09-16
The titanate quantum wires in ETS-10 crystals remain intact during ion exchange of the pristine cations (Na(+)(0.47) + K(+)(0.53)) with M(n+) ions (M(n+) = Na(+), K(+), Mg(2+), Ca(2+), Sr(2+), Ba(2+), Pb(2+), Cd(2+), Zn(2+)) and during reverse exchange of the newly exchanged cations with Na(+). The binding energies of O(1s) and Ti(2p) decrease as the electronegativity of the cation decreases, and they are inversely proportional to the negative partial charge of the framework oxygen [-delta(O(f))]. At least five different oxygen species were identified, and their binding energies (526.1-531.9 eV) indicate that the titanate-forming oxides are much more basic than those of aluminosilicate zeolites (530.2-533.3 eV), which explains the vulnerability of the quantum wire to acids and oxidants. The chemical shifts of the five NMR-spectroscopically nonequivalent Si sites, delta(I(A)), delta(I(B)), delta(II(A)), delta(II(B)), and delta(III), shift downfield as -delta(O(f)) increases, with slopes of 2.5, 18.6, 133.5, 216.3, and 93.8 ppm/[-delta(O(f))], respectively. The nonuniform responses of the chemical shifts to -delta(O(f)) arise from the phenomenon that the cations in the 12-membered-ring channels shift to the interiors of the cages surrounded by four seven-membered-ring windows. On the basis of the above, we assign delta(I(A)), delta(I(B)), delta(II(A)), and delta(II(B)) to the chemical shifts arising from Si(12,12), Si(12,7), Si(7,12), and Si(7,7) atoms, respectively. The frequency of the longitudinal stretching vibration of the titanate quantum wire increases linearly and the bandwidth decreases nonlinearly with increasing -delta(O(f)), indicating that the titanate quantum wire resembles a metallic carbon nanotube. As the degree of hydration increases, the vibrational frequency shifts linearly to higher frequencies while the bandwidth decreases. We identified another normal mode of vibration of the quantum wire, which vibrates in the region of 274-280 cm(-1). In the dehydrated state, the band-gap energy and the first absorption maximum shift to lower energies as -delta(O(f)) increases, indicating the oxide-to-titanium(IV) charge-transfer nature of the transitions.
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NASA Technical Reports Server (NTRS)
Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.
1999-01-01
A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Pavlov, S V; Trofimov, N S; Chekhlova, T K
2014-07-31
A possibility of designing optical waveguide devices based on sol – gel SiO{sub 2} – TiO{sub 2} films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm{sup -1} is demonstrated. The film and output-prism parameters are optimised. (fibreoptic and nonlinear-optic devices)
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1999-03-22
amplifiers fabricated on Si substrates by co- sputtering, (p. 27) 11:30am IMC3 ■ Birefrlngent oxidized porous silicon-based optical waveguides, Yu. N...that integrated optical waveguides based on oxidized porous silicon have a relatively large birefringence. As a result, the modes of both... Membrane microresonator lasers with 2-D photonic bandgap crystal mirrors for compact in- plane optics, B. D’Urso, O. Painter, A. Yariv, A. Scherer
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Waveguide Studies for Fiber Optics and Optical Signal Processing Applications.
1980-04-01
AO-A086 115 UNI!VERtSIT? OF SOUTIUR CALEPCRNA LOS AMUSS / 5 WAVGUIDE STUIES15 FOR FEB53 OpTECS AND OpTICAL SEOSA.o P /0Ksu-y "/6 UNLSIIDAPR N0 E...SAMUE Flola-??-c-sa UNCASZFIORAC-M-8042 U Final Technical Report (1 1April 1950 L V ~ WAVEGUIDE STUDIES FOR FIBER OPTICS AND OPTICAL SIGNAL PROCESSING...and Subtitle) 081 6&4JODO )EI YAVECUIDESTUDIES FOR JIBER OPTICS ANDL 7 Final ,T/echnical epoErt, OPTICAL SI’tNAL PROCESSING APPLICATIONS.4 11 Se 77
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Infrared and Terahertz Lasers on SI Using Novel Group-IV Alloys
2011-11-30
gain at 2,883 nm is comparable with those of many conventional III-V semiconductor lasers. On the other hand, a waveguide design was also presented ...other conduction-band valleys (", X) are above the L-valley band edge of the Ge0.76Si0.19Sn0.05 barrier. This band alignment presents a desirable...the QCL structure based upon Ge/ Ge0.76Si0.19Sn0.05 QWs. Only L-valley conduction- band lineups are shown in the potential diagram under an applied
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NASA Astrophysics Data System (ADS)
Gajdošová, Lenka; Seyringer, Dana
2017-02-01
We present the design and simulation of 20-channel, 50-GHz Si3N4 based AWG using three different commercial photonics tools, namely PHASAR from Optiwave Systems Inc., APSS from Apollo Photonics Inc. and RSoft from Synopsys Inc. For this purpose we created identical waveguide structures and identical AWG layouts in these tools and performed BPM simulations. For the simulations the same calculation conditions were used. These AWGs were designed for TM-polarized light with an AWG central wavelength of 850 nm. The output of all simulations, the transmission characteristics, were used to calculate the transmission parameters defining the optical properties of the simulated AWGs. These parameters were summarized and compared with each other. The results feature very good correlation between the tools and are comparable to the designed parameters in AWG-Parameters tool.
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2014-01-01
We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain. PACS 81.07.Gf; 68.35.bg; 68.35.bj; 62.23.Eg PMID:25114649
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FIBER AND INTEGRATED OPTICS: Bandgap modes in a coupled waveguide array
NASA Astrophysics Data System (ADS)
Usievich, B. A.; Nurligareev, D. Kh; Svetikov, V. V.; Sychugov, V. A.
2009-08-01
This work examines a waveguide array that consists of ten Nb2O5/SiO2 double layers and supports a 0.63-μm surface wave. The deposition of a Nb2O5 capping layer on top of the waveguide array enables a marked increase in the wave field intensity on its surface. The efficiency of surface-wave excitation in the Kretschmann configuration can be optimised by adjusting the number of double layers. We analyse the behaviour of the Bragg mode in relation to the thickness of the layer exposed to air and the transition of this mode from the second allowed band to the first through the bandgap of the system. In addition, the conventional leaky mode converts to a surface mode and then to a guided mode.
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Production and reactions of silicon atoms in hot wire deposition of amorphous silicon
NASA Astrophysics Data System (ADS)
Zheng, Wengang; Gallagher, Alan
2003-10-01
Decomposing silane and hydrogen molecules on a hot tungsten filament is an alternative method of depositing hydrogenated microcrystal and amorphous Si for thin-film semmiconductor devices. This "hot-wire" method can have significant advantages, such as high film deposition rates. The deposition chemistry involves Si and H atoms released from the filament, followed by their reactions with the vapor and surfaces. To establish these deposition pathways, we measure radicals at the substrate with a home built, threshold ionization mass spectrometer. The design and operation of this mass spectrometer for radical detection, and the behavior of Si atom production and reactions, will be presented. This work is supported by the National Renewable Energy Laboratory, Golden, CO 80401
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Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z
2011-05-11
Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.
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NASA Astrophysics Data System (ADS)
Majee, Subimal; Fátima Cerqueira, Maria; Tondelier, Denis; Geffroy, Bernard; Bonnassieux, Yvan; Alpuim, Pedro; Bourée, Jean Eric
2014-01-01
The reliability and stability are key issues for the commercial utilization of organic photovoltaic devices based on flexible polymer substrates. To increase the shelf-lifetime of these devices, transparent moisture barriers of silicon nitride (SiNx) films are deposited at low temperature by hot wire CVD (HW-CVD) process. Instead of the conventional route based on organic/inorganic hybrid structures, this work defines a new route consisting in depositing multilayer stacks of SiNx thin films, each single layer being treated by argon plasma. The plasma treatment allows creating smoother surface and surface atom rearrangement. We define a critical thickness of the single layer film and focus our attention on the effect of increasing the number of SiNx single-layers on the barrier properties. A water vapor transmission rate (WVTR) of 2 × 10-4 g/(m2·day) is reported for SiNx multilayer stack and a physical interpretation of the plasma treatment effect is given.
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Self-transducing silicon nanowire electromechanical systems at room temperature.
He, Rongrui; Feng, X L; Roukes, M L; Yang, Peidong
2008-06-01
Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (~90 nm down to ~30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices' resonant motions at frequencies as high as approximately 100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.
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Fabrication and RF characterization of a single nickel silicide nanowire for an interconnect.
Lee, Dongjin; Kang, Myunggil; Hong, Suheon; Hwang, Donghoon; Heo, Keun; Joo, Won-Jae; Kim, Sangsig; Whang, Dongmok; Hwang, Sung Woo
2013-09-01
We fabricated a nickel silicide nanowire (NiSi NW) device with a low thermal budget and characterized it by measuring the S-parameters in the radio-frequency (RF) regime. A single silicon nanowire (Si NW) was assembled on a substrate with a two-port coplanar waveguide structure using the dielectrophoresis method. Then, the Si NW on the device was perfectly transformed into a NiSi NW. The NiSi NW device was characterized by performing measurements in the DC and RF regimes. The transformation into the NiSi NW resulted in reducing about three-order more the resistance than before the transformation. Hence, the transmission of the NiSi NW device was 25 dB higher than that of the Si NW device up to gigahertz. We also discussed extracting the intrinsic properties of the NiSi NW by using de-embedding, circuit modeling, and simulation.
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Alumina or Semiconductor Ribbon Waveguides at 30 to 1,000 GHz
NASA Technical Reports Server (NTRS)
Yeh, Cavour; Rascoe, Daniel; Shimabukuro, Fred; Tope, Michael; Siegel, Peter
2005-01-01
Ribbon waveguides made of alumina or of semiconductors (Si, InP, or GaAs) have been proposed as low-loss transmission lines for coupling electronic components and circuits that operate at frequencies from 30 to 1,000 GHz. In addition to low losses (and a concomitant ability to withstand power levels higher than would otherwise be possible), the proposed ribbon waveguides would offer the advantage of compatibility with the materials and structures now commonly incorporated into integrated circuits. Heretofore, low-loss transmission lines for this frequency range have been unknown, making it necessary to resort to designs that, variously, place circuits and components to be coupled in proximity of each other and/or provide for coupling via free space through bulky and often lossy optical elements. Even chip-to-chip interconnections have been problematic in this frequency range. Metal wave-guiding structures (e.g., microstriplines and traditional waveguides) are not suitable for this frequency range because the skin depths of electromagnetic waves in this frequency range are so small as to give rise to high losses. Conventional rod-type dielectric waveguide structures are also not suitable for this frequency range because dielectric materials, including ones that exhibit ultralow losses at lower frequencies, exhibit significant losses in this frequency range. Unlike microstripline structures or metallic waveguides, the proposed ribbon waveguides would be free of metal and would therefore not be subject to skin-depth losses. Moreover, although they would be made of materials that are moderately lossy in the frequency range of interest, the proposed ribbon waveguides would cause the propagating electromagnetic waves to configure themselves in a manner that minimizes losses.
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Multiwaveguide implantable probe for light delivery to sets of distributed brain targets.
Zorzos, Anthony N; Boyden, Edward S; Fonstad, Clifton G
2010-12-15
Optical fibers are commonly inserted into living tissues such as the brain in order to deliver light to deep targets for neuroscientific and neuroengineering applications such as optogenetics, in which light is used to activate or silence neurons expressing specific photosensitive proteins. However, an optical fiber is limited to delivering light to a single target within the three-dimensional structure of the brain. We here demonstrate a multiwaveguide probe capable of independently delivering light to multiple targets along the probe axis, thus enabling versatile optical control of sets of distributed brain targets. The 1.45-cm-long probe is microfabricated in the form of a 360-μm-wide array of 12 parallel silicon oxynitride (SiON) multimode waveguides clad with SiO(2) and coated with aluminum; probes of custom dimensions are easily created as well. The waveguide array accepts light from a set of sources at the input end and guides the light down each waveguide to an aluminum corner mirror that efficiently deflects light away from the probe axis. Light losses at each stage are small (input coupling loss, 0.4 ± 0.3 dB; bend loss, negligible; propagation loss, 3.1 ± 1 dB/cm using the outscattering method and 3.2 ± 0.4 dB/cm using the cutback method; corner mirror loss, 1.5 ± 0.4 dB); a waveguide coupled, for example, to a 5 mW source will deliver over 1.5 mW to a target at a depth of 1 cm.
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Terahertz Difference-Frequency Quantum Cascade Laser Sources on Silicon
2016-12-22
temperature. The introduction of the Cherenkov waveguide scheme in these devices grown on semi- insulating InP substrates enabled generation of tens...room temperature, a factor of 5 improvement over the best reference devices on a native semi- insulating InP substrate. © 2016 Optical Society of America...implementation of the Cherenkov emission scheme [10]. Cherenkov THz DFG-QCLs reported so far use a semi- insulating (SI) InP substrate. SI InP
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NASA Astrophysics Data System (ADS)
Gusev, A. I.; Kozyrev, N. A.; Usoltsev, A. A.; Kryukov, R. E.; Osetkovsky, I. V.
2017-09-01
The effect of the introduction of vanadium and cobalt into the charge of the powder surfacing wire of Fe-C-Si-Mn-Cr-Mo-Ni system is studied. In the laboratory conditions, the samples of flux cored wires were produced. The surfacing made by the prepared wire was produced under the flux AN-26C, on the plates of steel St3 in 6 layers with the help of ASAW-1250 welding tractor. Reduction of carbon content in the deposited layer to 0.19-0.2% with simultaneous change in the content of chromium, nickel, molybdenum and other elements present in it contributes to the enlargement of the martensite needles and the increase in the size of the former austenite grain. The obtained dependences of hardness of the deposited layer and its wear resistance on the mass fraction of elements, included in the composition of powder wires of the proposed system, can be used to predict the hardness of the welded layer and its wear resistance under different operating conditions for mining equipment and coal mining equipment.
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NASA Technical Reports Server (NTRS)
Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.
2004-01-01
Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.
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Two different ways for waveguides and optoelectronics components on top of C-MOS
NASA Astrophysics Data System (ADS)
Fedeli, J. M.; Jeannot, S.; Kostrzewa, M.; Di Cioccio, L.; Jousseaume, V.; Orobtchouk, R.; Maury, P.; Zussy, M.
2006-02-01
While fabrication of photonic components at the wafer level is a long standing goal of integrated optics, new applications such as optical interconnects are introducing new challenges for waveguides and optoelectronic component fabrication. Indeed, global interconnects are expected to face severe limitations in the near future. To face this problem, optical links on top of a CMOS circuits could be an alternative. The critical points to perform an optical link on a chip are firstly the realization of compact passive optical distribution and secondly the report of optoelectronic components for the sources and detectors. This paper presents two different approaches for the integration of both waveguides and optoelectronic components. In a first "total bonding" approach, waveguides have been elaborated using classical "Silicon On Insulators" technology and then reported using molecular bonding on top off Si wafers. The S0I substrate was then chemically etched, after what InP dies were moleculary bonded on top of the waveguides. With this approach, optical components with low loses and a good equilibrium are demonsrated. Using molecular bonding, InP dies were reported with no degradation of the optoelectronic properties of the films. In a second approach, using PECVD silicon nitride or amorphous silicon coupled to PECVD silicon oxide, basic optical components are demonstrated. This low temperature technology is compatible with a microelectronic Back End process, allowing an integration of the waveguides directly on top of CMOS circuits. InP dies can then be bonded on top of the waveguides.
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Method and apparatus for forming conformal SiN.sub.x films
Wang, Qi
2007-11-27
A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.
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Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sekiguchi, Takeharu; Yoshida, Shunji; Itoh, Kohei M.
2005-09-02
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter {approx}2 nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300 deg. C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.
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Manipulating Neutral Atoms in Chip-Based Magnetic Traps
NASA Technical Reports Server (NTRS)
Aveline, David; Thompson, Robert; Lundblad, Nathan; Maleki, Lute; Yu, Nan; Kohel, James
2009-01-01
Several techniques for manipulating neutral atoms (more precisely, ultracold clouds of neutral atoms) in chip-based magnetic traps and atomic waveguides have been demonstrated. Such traps and waveguides are promising components of future quantum sensors that would offer sensitivities much greater than those of conventional sensors. Potential applications include gyroscopy and basic research in physical phenomena that involve gravitational and/or electromagnetic fields. The developed techniques make it possible to control atoms with greater versatility and dexterity than were previously possible and, hence, can be expected to contribute to the value of chip-based magnetic traps and atomic waveguides. The basic principle of these techniques is to control gradient magnetic fields with suitable timing so as to alter a trap to exert position-, velocity-, and/or time-dependent forces on atoms in the trap to obtain desired effects. The trap magnetic fields are generated by controlled electric currents flowing in both macroscopic off-chip electromagnet coils and microscopic wires on the surface of the chip. The methods are best explained in terms of examples. Rather than simply allowing atoms to expand freely into an atomic waveguide, one can give them a controllable push by switching on an externally generated or a chip-based gradient magnetic field. This push can increase the speed of the atoms, typically from about 5 to about 20 cm/s. Applying a non-linear magnetic-field gradient exerts different forces on atoms in different positions a phenomenon that one can exploit by introducing a delay between releasing atoms into the waveguide and turning on the magnetic field.
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NASA Astrophysics Data System (ADS)
Ikedo, Akihito; Kawashima, Takahiro; Kawano, Takeshi; Ishida, Makoto
2009-07-01
Repeated vapor-liquid-solid (VLS) growth with Au and PH3-Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 Ω, confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.
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2D materials integrated in Si3N4 photonics platform
NASA Astrophysics Data System (ADS)
Faneca, Joaquin; Hogan, Benjamin T.; Torres Alonso, E.; Craciun, Monica; Baldycheva, Anna
2018-02-01
In this paper, we discuss a back-end CMOS fabrication process for the large-scale integration of 2D materials on SOI (siliconon-insulator) platform and present a complete theoretical study of the change in the effective refractive index of 2D materialsenabled silicon nitride waveguide structures. The chemical vapour deposition (CVD) and liquid exfoliation fabrication methods are described for the fabrication of graphene, WS2 and MoS2 thin films. Finite-difference frequency-domain (FDFD) approach and the Transfer Matrix Method were used in order to mathematically describe these structures. The introduction of thin films of 2D material onto Si3N4 waveguide structures allows manipulation of the optical characteristics to a high degree of precision by varying the Fermi-level through the engineering of the number of atomically thin layers or by electrical tuning, for example. Based on the proposed tuning approach, designs of graphene, WS2 and MoS2 enabled Si3N4 micro-ring structures are presented for the visible and NIR range, which demonstrate versatility and desirable properties for a wide range of applications, such as bio-chemical sensing and optical communications.
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NASA Astrophysics Data System (ADS)
Singh, Mandeep; Datta, Arnab
2018-05-01
In this paper, silicon based dual ring resonator with hybrid plasmonic bus waveguides (Cu-SiO2-Si-SiO2-Cu) is investigated for achieving switching in the telecommunication C-band (λ = 1.54-1.553µm). The switch element uses vanadium oxide (VO2) as the switching medium when inserted between the rings in order to tailor transmission from one ring to the other through heating induced phase transition. In this manner, the proposed switch element uses one vanadium oxide medium instead of refractive index tailoring of the whole ring as in the prior reported works and achieves switching response. From two-dimensional finite element analysis we have found that, the proposed switch can achieve maximum extinction ratio of 2.72 dB at λ = 1.5434µm, exclusively by tailoring VO2 phase. Furthermore, impact of aperture width, and gap (separation between the bus waveguide and rings) are investigated to gain insight on the improvement of extinction ratio. From our numerical simulations, we find that free spectral range (FSR) and figure of merit (Q) for OFF and ON states are (173.36 nm, 92.63), and (173.58 nm, 65.39), respectively.
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Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji
2012-04-09
On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.
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Optimized piranha etching process for SU8-based MEMS and MOEMS construction
Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron
2011-01-01
We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides. PMID:21423840
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Optimized piranha etching process for SU8-based MEMS and MOEMS construction.
Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron
2010-11-01
We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H(2)O(2):H(2)SO(4)) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO(2) and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.
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Optimized piranha etching process for SU8-based MEMS and MOEMS construction
NASA Astrophysics Data System (ADS)
Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron
2010-11-01
We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.
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Ring resonator based narrow-linewidth semiconductor lasers
NASA Technical Reports Server (NTRS)
Ksendzov, Alexander (Inventor)
2005-01-01
The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.
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NASA Astrophysics Data System (ADS)
Zolotukhin, D.; Seredin, P.; Lenshin, A.; Goloshchapov, D.; Mizerov, A.
2017-11-01
We report on successful growth of GaN nanorods by low-temperature plasma-assisted molecular beam epitaxy on a Si(111) substrate with and without preformed thin porous Si layer (por-Si). The deposited GaN initially forms islands which act as a seed for the wires. Porous structure of the por-Si layer helps to control nucleation islands sizes and achieve homogeneous distribution of the nanorods diameters. In addition 850 nm-thick crack-free GaN layer was formed on Si(111) substrate with preformed por-Si layer.
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Effect of microwave radiation on the beating rate of isolated frog hearts
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yee, K.C.; Chou, C.K.; Guy, A.W.
1984-01-01
One hundred and two isolated frog hearts were divided into ten groups and placed individually in a waveguide filled with Ringer's solution and exposed to 2,450-MHz CW radiation at 2 and 8.55 W/kg. Heart rate was recorded using one of the following methods: 3-M KCl glass electrode, ultrasound probe, tension transducer, Ringer's solution glass electrode, and a metal wire inserted in the Ringer's solution electrode. An accelerated decrease of heart rate was observed only in those groups recorded using the 3-M KCl electrode and the metal wire Ringer's solution electrode. No effect was found in the other groups. These resultsmore » indicate that bradycardia in isolated hearts could be caused by electrode artifacts resulting from the intensification of electromagnetic fields.« less
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Full colorless transmission of millimeter-wave band gigabit data over WDM-PON using sideband routing
NASA Astrophysics Data System (ADS)
Won, Yong-Yuk; Kim, Hyun-Seung; Son, Yong-Hwan; Han, Sang-Kook
2011-12-01
A new wavelength division multiplexed-radio over fiber (WDM-RoF) access network scheme supporting the simultaneous transmission of a 1.25-Gb/s wired data as well as a 1.25-Gb/s wireless data is proposed in this paper. An optical carrier suppression effect and sideband routing using the multiplexing of arrayed waveguide grating (AWG) with 50-GHz channel spacing are utilized to generate a millimeter wave band carrier. These techniques make the proposed architecture transmit both a wired data and a wireless one at the same time. A reflective semiconductor optical amplifier (RSOA) is employed at both central office and base station so that this architecture is operated colorlessly. Error free transmissions (BER of 10-9) of both downlink and uplink are achieved simultaneously.
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Bending effects and temperature dependence of magnetic properties in a Fe-rich amorphous wire
NASA Astrophysics Data System (ADS)
Bordin, G.; Buttino, G.; Poppi, M.
2001-08-01
Amorphous wires with composition Fe 77.5Si 7.5B 15 exhibit a very peculiar magnetization process characterized by a single and quite large Barkhausen jump. This gives rise to a squared hysteresis loop at a critical magnetic field. The bistable behaviour, widely studied in wires with typical length of 10 cm and diameter of 125 μm, appears above a length of about 7 cm in straight wires and disappears for curvature radius within the range 2-12 cm in bent wires. In this work it is shown that bistability occurs in bent wires, whatever their curvature is, provided the wires are long enough. To this purpose spiral-shaped samples with several turns are considered. However, when the wire length is not a integer number of turns the magnetization reverses through many large Barkhausen jumps. In this condition, varying the measuring temperature can activate the energy barriers for the jumps.
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Silicon-based silicon–germanium–tin heterostructure photonics
Soref, Richard
2014-01-01
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479
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Reliability improvement of wire bonds subjected to fatigue stresses.
NASA Technical Reports Server (NTRS)
Ravi, K. V.; Philofsky, E. M.
1972-01-01
The failure of wire bonds due to repeated flexure when semiconductor devices are operated in an on-off mode has been investigated. An accelerated fatigue testing apparatus was constructed and the major fatigue variables, aluminum alloy composition, and bonding mechanism, were tested. The data showed Al-1% Mg wires to exhibit superior fatigue characteristics compared to Al-1% Cu or Al-1% Si and ultrasonic bonding to be better than thermocompression bonding for fatigue resistance. Based on these results highly reliable devices were fabricated using Al-1% Mg wire with ultrasonic bonding which withstood 120,000 power cycles with no failures.
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Applied Computational Electromagnetics Society Journal, volume 9, number 1, March 1994
NASA Astrophysics Data System (ADS)
1994-03-01
The partial contents of this document include the following: On the Use of Bivariate Spline Interpolation of Slot Data in the Design of Slotted Waveguide Arrays; A Technique for Determining Non-Integer Eigenvalues for Solutions of Ordinary Differential Equations; Antenna Modeling and Characterization of a VLF Airborne Dual Trailing Wire Antenna System; Electromagnetic Scattering from Two-Dimensional Composite Objects; and Use of a Stealth Boundary with Finite Difference Frequency Domain Simulations of Simple Antenna Problems.
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Extraterrestrial processing and manufacturing of large space systems, volume 1, chapters 1-6
NASA Technical Reports Server (NTRS)
Miller, R. H.; Smith, D. B. S.
1979-01-01
Space program scenarios for production of large space structures from lunar materials are defined. The concept of the space manufacturing facility (SMF) is presented. The manufacturing processes and equipment for the SMF are defined and the conceptual layouts are described for the production of solar cells and arrays, structures and joints, conduits, waveguides, RF equipment radiators, wire cables, and converters. A 'reference' SMF was designed and its operation requirements are described.
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Microwave Power Combiners for Signals of Arbitrary Amplitude
NASA Technical Reports Server (NTRS)
Conroy, Bruce; Hoppe, Daniel
2009-01-01
Schemes for combining power from coherent microwave sources of arbitrary (unequal or equal) amplitude have been proposed. Most prior microwave-power-combining schemes are limited to sources of equal amplitude. The basic principle of the schemes now proposed is to use quasi-optical components to manipulate the polarizations and phases of two arbitrary-amplitude input signals in such a way as to combine them into one output signal having a specified, fixed polarization. To combine power from more than two sources, one could use multiple powercombining stages based on this principle, feeding the outputs of lower-power stages as inputs to higher-power stages. Quasi-optical components suitable for implementing these schemes include grids of parallel wires, vane polarizers, and a variety of waveguide structures. For the sake of brevity, the remainder of this article illustrates the basic principle by focusing on one scheme in which a wire grid and two vane polarizers would be used. Wire grids are the key quasi-optical elements in many prior equal-power combiners. In somewhat oversimplified terms, a wire grid reflects an incident beam having an electric field parallel to the wires and passes an incident beam having an electric field perpendicular to the wires. In a typical prior equal-power combining scheme, one provides for two properly phased, equal-amplitude signals having mutually perpendicular linear polarizations to impinge from two mutually perpendicular directions on a wire grid in a plane oriented at an angle of 45 with respect to both beam axes. The wires in the grid are oriented to pass one of the incident beams straight through onto the output path and to reflect the other incident beam onto the output path along with the first-mentioned beam.
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Gabrielyan, Nare; Saranti, Konstantina; Manjunatha, Krishna Nama; Paul, Shashi
2013-02-15
This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid-solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used.The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices.
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2013-01-01
This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used. The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices. PMID:23413969
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Novel optical waveguides by in-depth controlled electronic damage with swift ions
NASA Astrophysics Data System (ADS)
Olivares, J.; García-Navarro, A.; Méndez, A.; Agulló-López, F.; García, G.; García-Cabañes, A.; Carrascosa, M.
2007-04-01
We review recent results on a novel method to modify crystalline dielectric materials and fabricate optical waveguides and integrated optics devices. It relies on irradiation with medium-mass high-energy ions (2-50 MeV) where the electronic stopping power is dominant over that one associated to nuclear collisions. By exploiting the processing capabilities of the method, novel optical structures can be achieved at moderate (1014 cm-2) and even low and ultralow (1012 cm-2) fluences. In particular, step-like waveguides with a high index jump Δn ∼ 0.1-0.2, guiding both ordinary and extraordinary modes, have been prepared with F and O ions (20 MeV) at moderate fluences. They present good non-linear and electrooptic perfomance and low losses. (1 dB/cm). Moreover, useful optical waveguiding has been also achieved at ultralow frequencies (isolated track regime), using Cl and Si ions (40-45 MeV). In this latter case, the individual amorphous nanotracks, whose radius increases with depth, create an effective optical medium causing optical trapping.
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NASA Astrophysics Data System (ADS)
Agnarsson, Björn; Mapar, Mokhtar; Sjöberg, Mattias; Alizadehheidari, Mohammadreza; Höök, Fredrik
2018-06-01
Organic and inorganic solid materials form the building blocks for most of today’s high-technological instruments and devices. However, challenges related to dissimilar material properties have hampered the synthesis of thin-film devices comprised of both organic and inorganic films. We here give a detailed description of a carefully optimized processing protocol used for the construction of a three-layered hybrid organic–inorganic waveguide-chip intended for combined scattering and fluorescence evanescent-wave microscopy in aqueous environments using conventional upright microscopes. An inorganic core layer (SiO2 or Si3N4), embedded symmetrically in an organic cladding layer (CYTOP), aids simple, yet efficient in-coupling of light, and since the organic cladding layer is refractive index matched to water, low stray-light (background) scattering of the propagating light is ensured. Another major advantage is that the inorganic core layer makes the chip compatible with multiple well-established surface functionalization schemes that allows for a broad range of applications, including detection of single lipid vesicles, metallic nanoparticles or cells in complex environments, either label-free—by direct detection of scattered light—or by use of fluorescence excitation and emission. Herein, focus is put on a detailed description of the fabrication of the waveguide-chip, together with a fundamental characterization of its optical properties and performance, particularly in comparison with conventional epi illumination. Quantitative analysis of images obtained from both fluorescence and scattering intensities from surface-immobilized polystyrene nanoparticles in suspensions of different concentrations, revealed enhanced signal-to-noise and signal-to-background ratios for the waveguide illumination compared to the epi-illumination.
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NASA Astrophysics Data System (ADS)
Mayer, A. S.; Phillips, C. R.; Langrock, C.; Klenner, A.; Johnson, A. R.; Luke, K.; Okawachi, Y.; Lipson, M.; Gaeta, A. L.; Fejer, M. M.; Keller, U.
2016-11-01
We report the generation of an optical-frequency comb in the midinfrared region with 1-GHz comb-line spacing and no offset with respect to absolute-zero frequency. This comb is tunable from 2.5 to 4.2 μ m and covers a critical spectral region for important environmental and industrial applications, such as molecular spectroscopy of trace gases. We obtain such a comb using a highly efficient frequency conversion of a near-infrared frequency comb. The latter is based on a compact diode-pumped semiconductor saturable absorber mirror-mode-locked ytterbium-doped calcium-aluminum gadolynate (Yb:CALGO) laser operating at 1 μ m . The frequency-conversion process is based on optical parametric amplification (OPA) in a periodically poled lithium niobate (PPLN) chip containing buried waveguides fabricated by reverse proton exchange. The laser with a repetition rate of 1 GHz is the only active element of the system. It provides the pump pulses for the OPA process as well as seed photons in the range of 1.4 - 1.8 μ m via supercontinuum generation in a silicon-nitride (Si3 N4 ) waveguide. Both the PPLN and Si3 N4 waveguides represent particularly suitable platforms for low-energy nonlinear interactions; they allow for mid-IR comb powers per comb line at the microwatt level and signal amplification levels up to 35 dB, with 2 orders of magnitude less pulse energy than reported in OPA systems using bulk devices. Based on numerical simulations, we explain how high amplification can be achieved at low energy using the interplay between mode confinement and a favorable group-velocity mismatch configuration where the mid-IR pulse moves at the same velocity as the pump.
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Photonic ring resonator filters for astronomical OH suppression
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ellis, S. C.; Kuhlmann, S.; Kuehn, K.
Ring resonators provide a means of filtering specific wavelengths from a waveguide, and optionally dropping the filtered wavelengths into a second waveguide. Both of these features are potentially useful for astronomical instruments. In this paper we focus on their use as notch filters to remove the signal from atmospheric OH emission lines from astronomical spectra. We derive the design requirements for ring resonators for OH suppression from theory and finite difference time domain simulations. We find that rings with small radii (< 10 μm) are required to provide an adequate free spectral range, leading to high index contrast materials suchmore » as Si and Si 3N 4. Critically coupled rings with high self-coupling coefficients should provide the necessary Q factors, suppression depth, and throughput for efficient OH suppression, but will require post-inscription tuning of the coupling and the resonant wavelengths. The overall prospects for the use of ring resonators in astronomical instruments is promising, provided efficient fibre-chip coupling can be achieved.« less
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Photonic ring resonator filters for astronomical OH suppression
Ellis, S. C.; Kuhlmann, S.; Kuehn, K.; ...
2017-01-01
Ring resonators provide a means of filtering specific wavelengths from a waveguide, and optionally dropping the filtered wavelengths into a second waveguide. Both of these features are potentially useful for astronomical instruments. In this paper we focus on their use as notch filters to remove the signal from atmospheric OH emission lines from astronomical spectra. We derive the design requirements for ring resonators for OH suppression from theory and finite difference time domain simulations. We find that rings with small radii (< 10 μm) are required to provide an adequate free spectral range, leading to high index contrast materials suchmore » as Si and Si 3N 4. Critically coupled rings with high self-coupling coefficients should provide the necessary Q factors, suppression depth, and throughput for efficient OH suppression, but will require post-inscription tuning of the coupling and the resonant wavelengths. The overall prospects for the use of ring resonators in astronomical instruments is promising, provided efficient fibre-chip coupling can be achieved.« less
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Solar Water Splitting with a Hydrogenase Integrated in Photoelectrochemical Tandem Cells.
Nam, Dong Heon; Zhang, Jenny; Andrei, Virgil; Kornienko, Nikolay; Heidary, Nina; Wagner, Andreas; Nakanishi, Kenichi; Sokol, Katarzyna; Slater, Barnaby; Zebger, Ingo; Hofmann, Stephan; Fontecilla-Camps, Juan; Park, Chan Beum; Reisner, Erwin
2018-06-11
Hydrogenases (H2ases) are benchmark electrocatalysts in H2 production, both in biology and (photo)catalysis in vitro. We report the tailoring of a p-type Si photocathode for optimal loading and wiring of H2ase by the introduction of a hierarchical inverse opal (IO) TiO2 interlayer. This proton reducing Si|IO-TiO2|H2ase photocathode is capable of driving overall water splitting in combination with a complementary photoanode. We demonstrate unassisted (bias-free) water-splitting by wiring Si|IO-TiO2|H2ase to a modified BiVO4 photoanode in a photoelectrochemical (PEC) cell during several hours of irradiation. Connecting the Si|IO-TiO2|H2ase to a photosystem II (PSII) photoanode provides proof-of-concept for an engineered Z-scheme that replaces the non-complementary, natural light absorber photosystem I with a complementary abiotic silicon photocathode. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Novel optical interconnect devices and coupling methods applying self-written waveguide technology
NASA Astrophysics Data System (ADS)
Nakama, Kenichi; Mikami, Osamu
2011-05-01
For the use in cost-effective optical interconnection of opt-electronic printed wiring boards (OE-PWBs), we have developed novel optical interconnect devices and coupling methods simplifying board to board optical interconnect. All these are based on the self-written waveguide (SWW) technology by the mask-transfer method with light-curable resin. This method enables fabrication of arrayed M × N optical channels at one shot of UV light. Very precise patterns, as an example, optical rod with diameters of 50μm to 500μm, can be easily fabricated. The length of the fabricated patterns ,, typically up to about 1000μm , can be controlled by a spacer placed between the photomask and the substrate. Using these technologies, several new optical interfaces have been demonstrated. These are a chip VCSEL with an optical output rod and new coupling methods of "plug-in" alignment and "optical socket" based on SWW.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Ming, Xianshun; Liu, Xinyu; Sun, Liqun
We develop the theory of all-dielectric absorbers based on temporal coupled mode theory (TCMT), with parameters extracted from eigenfrequency simulations. An infinite square array of cylindrical resonators embedded in air is investigated, and we find that it supports two eigenmodes of opposite symmetry that are each responsible for half of the total absorption. The even and odd eigenmodes are found to be the hybrid electric (EH111) and hybrid magnetic (HE111) waveguide modes of a dielectric wire of circular cross section, respectively. The geometry of the cylindrical array is shown to be useful for individual tuning of the radiative loss ratesmore » of the eigenmodes, thus permitting frequency degeneracy. Further, by specifying the resonators’ loss tangent, the material loss rate can be made to equal the radiative loss rate, thus achieving a state of degenerate critical coupling and perfect absorption. Our results are supported by S-parameter simulations, and agree well with waveguide theory.« less
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Infrared transparent graphene heater for silicon photonic integrated circuits.
Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich
2016-04-18
Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.
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An octave-spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide
Kuyken, Bart; Ideguchi, Takuro; Holzner, Simon; Yan, Ming; Hänsch, Theodor W.; Van Campenhout, Joris; Verheyen, Peter; Coen, Stéphane; Leo, Francois; Baets, Roel; Roelkens, Gunther; Picqué, Nathalie
2015-01-01
Laser frequency combs, sources with a spectrum consisting of hundred thousands evenly spaced narrow lines, have an exhilarating potential for new approaches to molecular spectroscopy and sensing in the mid-infrared region. The generation of such broadband coherent sources is presently under active exploration. Technical challenges have slowed down such developments. Identifying a versatile highly nonlinear medium for significantly broadening a mid-infrared comb spectrum remains challenging. Here we take a different approach to spectral broadening of mid-infrared frequency combs and investigate CMOS-compatible highly nonlinear dispersion-engineered silicon nanophotonic waveguides on a silicon-on-insulator chip. We record octave-spanning (1,500–3,300 nm) spectra with a coupled input pulse energy as low as 16 pJ. We demonstrate phase-coherent comb spectra broadened on a room-temperature-operating CMOS-compatible chip. PMID:25697764
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Attachment of Free Filament Thermocouples for Temperature Measurements on CMC
NASA Technical Reports Server (NTRS)
Lei, Jih-Fen; Cuy, Michael D.; Wnuk, Stephen P.
1997-01-01
Ceramic Matrix Composites (CMC) are being developed for use as enabling materials for advanced aeropropulsion engine and high speed civil transport applications. The characterization and testing of these advanced materials in hostile, high-temperature environments require accurate measurement of the material temperatures. Commonly used wire Thermo-Couples (TC) can not be attached to this ceramic based material via conventional spot-welding techniques. Attachment of wire TC's with commercially available ceramic cements fail to provide sufficient adhesion at high temperatures. While advanced thin film TC technology provides minimally intrusive surface temperature measurement and has good adhesion on the CMC, its fabrication requires sophisticated and expensive facilities and is very time consuming. In addition, the durability of lead wire attachments to both thin film TC's and the substrate materials requires further improvement. This paper presents a newly developed attachment technique for installation of free filament wire TC's with a unique convoluted design on ceramic based materials such as CMC's. Three CMC's (SiC/SiC CMC and alumina/alumina CMC) instrumented with type IC, R or S wire TC's were tested in a Mach 0.3 burner rig. The CMC temperatures measured from these wire TC's were compared to that from the facility pyrometer and thin film TC's. There was no sign of TC delamination even after several hours exposure to 1200 C. The test results proved that this new technique can successfully attach wire TC's on CMC's and provide temperature data in hostile environments. The sensor fabrication process is less expensive and requires very little time compared to that of the thin film TC's. The same installation technique/process can also be applied to attach lead wires for thin film sensor systems.
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NASA Astrophysics Data System (ADS)
Xhoxhi, Moisi; Dudia, Alma; Ymeti, Aurel
2017-05-01
We propose the novel structure of an interferometric biosensor based on multimode interference (MMI) waveguides. We present the design of the biosensor using eigenmode expansion (EME) method in accordance with the requirements and standards of today's photonic technology. The MMI structures with a 90 nm Si3N4 core are used as power splitters with 5 outputs. The 5 high-resolution images at the end of the multimode region show high power balance. We analyze the coupling efficiency of the laser source with the structure, the excess loss and power imbalance for different compact MMI waveguides with widths ranging from 45 μm to 15 μm. For a laser source with a tolerance of +/-1mm in linearization we could achieve a coupling efficiency of 52%. MMI waveguides with tapered channels show excess loss values under 0.5 dB and power imbalance values under 0.08 dB. In addition, we show that for a 10 nm deviation of the source wavelength from its optimal value and for a 10 μm deviation of the MMI length from its optimal value, the performance of the MMI waveguides remains acceptable. Finally, we analyze the power budget of the whole biosensor structure and show that it is sufficient for the proper operation of this device.
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Optical interconnects based on VCSELs and low-loss silicon photonics
NASA Astrophysics Data System (ADS)
Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian
2018-02-01
Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.
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High Efficiency Photovoltaic and Plasmonic Devices
2011-07-01
on Si or SOI substrate along with its band alignment. This elongated mesa forms a strip channel aveguide……………………………….…4 Figure 3 Radiative and...lattice matched GeSn relaxed buffer on Si or SOI substrate along with its band alignment. This elongated mesa forms a strip channel waveguide...Appl. Phys. Lett. 90, 251105 (2007). 8. R. A. Soref and C. H. Perry, J. Appl. Phys. 69, 539 (1991). 9. H. P. L. de Guevara, A. G. Rodriguez , H
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Quantum cascade lasers with Y2O3 insulation layer operating at 8.1 µm.
Kang, JoonHyun; Yang, Hyun-Duk; Joo, Beom Soo; Park, Joon-Suh; Lee, Song-Ee; Jeong, Shinyoung; Kyhm, Jihoon; Han, Moonsup; Song, Jin Dong; Han, Il Ki
2017-08-07
SiO 2 is a commonly used insulation layer for QCLs but has high absorption peak around 8 to 10 µm. Instead of SiO 2 , we used Y 2 O 3 as an insulation layer for DC-QCL and successfully demonstrated lasing operation at the wavelength around 8.1 µm. We also showed 2D numerical analysis on the absorption coefficient of our DC-QCL structure with various parameters such as insulating materials, waveguide width, and mesa angle.
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Interferometric imaging using Si3N4 photonic integrated circuits for a SPIDER imager.
Su, Tiehui; Liu, Guangyao; Badham, Katherine E; Thurman, Samuel T; Kendrick, Richard L; Duncan, Alan; Wuchenich, Danielle; Ogden, Chad; Chriqui, Guy; Feng, Shaoqi; Chun, Jaeyi; Lai, Weicheng; Yoo, S J B
2018-05-14
This paper reports design, fabrication, and experimental demonstration of a silicon nitride photonic integrated circuit (PIC). The PIC is capable of conducting one-dimensional interferometric imaging with twelve baselines near λ = 1100-1600 nm. The PIC consists of twelve waveguide pairs, each leading to a multi-mode interferometer (MMI) that forms broadband interference fringes or each corresponding pair of the waveguides. Then an 18 channel arrayed waveguide grating (AWG) separates the combined signal into 18 signals of different wavelengths. A total of 103 sets of fringes are collected by the detector array at the output of the PIC. We keep the optical path difference (OPD) of each interferometer baseline to within 1 µm to maximize the visibility of the interference measurement. We also constructed a testbed to utilize the PIC for two-dimension complex visibility measurement with various targets. The experiment shows reconstructed images in good agreement with theoretical predictions.
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Slot silicon-gallium nitride waveguide in MMI structures based 1x8 wavelength demultiplexer
NASA Astrophysics Data System (ADS)
Ben Zaken, Bar Baruch; Zanzury, Tal; Malka, Dror
2017-06-01
We propose a novel 8-channel wavelength multimode interference (MMI) demultiplexer in slot waveguide structures that operated at 1530 nm, 1535 nm, 1540 nm, 1545 nm, 1550 nm, 1555 nm, 1560 nm and 1565 nm wavelengths. Gallium nitride (GaN) surrounded by silicon (Si) was founded as suitable materials for the slot-waveguide structures. The proposed device was designed by seven 1x2 MMI couplers, fourteen S-band and one input taper. Numerical investigations were carried out on the geometrical parameters by using a full vectorial-beam propagation method (FVBPM). Simulation results show that the proposed device can transmit 8-channel that works in the whole C-band (1530- 1565 nm) with low crosstalk ((-19.97)-(-13.77) dB) and bandwidth (1.8-3.6 nm). Thus, the device can be very useful in optical networking systems that work on dense wavelength division multiplexing (DWDM) technology.
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Ultrafast modulators based on nonlinear photonic crystal waveguides
NASA Astrophysics Data System (ADS)
Liu, Zhifu; Li, Jianheng; Tu, Yongming; Ho, Seng-Tiong; Wessels, Bruce W.
2011-03-01
Nonlinear photonic crystal (PhC) waveguides are being developed for ultrafast modulators. To enable phase velocity matching we have investigated one- and two-dimensional structures. Photonic crystal (PhC) waveguides based on epitaxial barium titanate (BTO) thin film in a Si3N4/BTO/MgO multilayer structure were fabricated by electron beam lithography or focused ion beam (FIB) milling. For both one- and two-dimensional PhCs, simulation shows that sufficient refractive index contrast is achieved to form a stop band. For one-dimensional Bragg reflector, we measured its slow light properties and the group refractive index of optical wave. For a millimeter long waveguide a 27 nm wide stop band was obtained at 1550 nm. A slowing of the light was observed, the group refractive indices at the mid band gap and at the band edges were estimated to be between 8.0 and 12 for the transverse electric (TE) mode, and 6.9 and 13 for the transverse magnetic (TM) mode. For TE optical modes, the enhancement factor of EO coefficient ranges from 7 to 13, and for the TM mode, the factor ranges from 5.9 to 15. Measurements indicate that near velocity phase matching can be realized. Upon realizing the phase velocity matching condition, devices with a small foot print with bandwidths at 490 GHz can be attained. Two-dimensional PhC crystal with a hexagonal lattice was also investigated. The PhCs were fabricated from epitaxial BTO thin film multilayers using focused ion beam milling. The PhCs are based on BTO slab waveguide and air hole arrays defined within Si3N4 and BTO thin films. A refractive index contrast of 0.4 between the barium titanate thin film multilayers and the air holes enables strong light confinement. For the TE optical mode, the hexagonal photonic crystal lattice with a diameter of 155 nm and a lattice constant of 740 nm yields a photonic bandgap over the wavelength range from 1525 to 1575 nm. The transmission spectrum of the PhC waveguide exhibits stronger Fabry Perot resonance compared to that of conventional waveguide. Measured transmission spectra show a bandgap in the ΓM direction in the reciprocal lattice that is in agreement with the simulated results using the finite-difference time-domain (FDTD) method. Compared to polarization intensity EO modulator with a half-wave voltage length product of 4.7 V•mm. The PhC based EO modulator has a factor of 6.6 improvement in the figure of merit performance. The thin film PhC waveguide devices show considerable potential for ultra-wide bandwidth electro-optic modulators as well as tunable optical filters and switches.
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Integrated polymer polarization rotator based on tilted laser ablation
NASA Astrophysics Data System (ADS)
Poulopoulos, Giannis; Kalavrouziotis, Dimitrios; Missinne, Jeroen; Bosman, Erwin; Van Steenberge, Geert; Apostolopoulos, Dimitrios; Avramopoulos, Hercules
2017-02-01
The ubiquitous need for compact, low-cost and mass production photonic devices, for next generation photonic enabled applications, necessitates the development of integrated components exhibiting functionalities that are, to date, carried out by free space elements or standard fiber equipment. The polarization rotator is a typical example of such tendency, as it is a crucial part of the PBS operation of future transceiver modules that leverage polarization multiplexing schemes for increasing the optical network capacity. Up to now, a variety of integrated polarization rotating concepts has been proposed and reported, relying, mainly, on special waveguide crossection configurations for achieving the rotation. Nevertheless, most of those concepts employ SiPh or III-V integration platforms, significantly increasing the fabrication complexity required for customizing the waveguide crossection, which in turn leads to either prohibitively increased cost or compromised quality and performance. In this manuscript we demonstrate the extensive design of a low-cost integrated polymer polarization rotator employing a right-trapezoidal waveguide interfaced to standard square polymer waveguides. First the crossection of the waveguide is defined by calculating and analyzing the components of the hybrid modes excited in the waveguide structure, using a Finite Difference mode solver. Mode overlaps between the fundamental polymer mode and each hybrid mode reveal the optimum lateral offset between the square polymer and the trapezoidal waveguide that ensures both minimum interface loss and maximized polarization rotation performance. The required trapezoidal waveguide length is obtained through EigenMode Expansion (EME) propagation simulations, while more than 95% maximum theoretical conversion efficiency is reported over the entire C-band, resulting to more than 13dB polarization extinction ratio. The polarization rotator design relies on the development of angled polymer waveguide sidewalls, employing the tilted laser ablation technology, currently available at CMST. Therefore, the aforementioned simulation steps adhere fully to the respective design rules, taking into account the anticipated fabrication variations
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Extraterrestrial processing and manufacturing of large space systems. Volume 3: Executive summary
NASA Technical Reports Server (NTRS)
Miller, R. H.; Smith, D. B. S.
1979-01-01
Facilities and equipment are defined for refining processes to commercial grade of lunar material that is delivered to a 'space manufacturing facility' in beneficiated, primary processed quality. The manufacturing facilities and the equipment for producing elements of large space systems from these materials and providing programmatic assessments of the concepts are also defined. In-space production processes of solar cells (by vapor deposition) and arrays, structures and joints, conduits, waveguides, RF equipment radiators, wire cables, converters, and others are described.
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2010-03-01
mounted in its center point. One can see the 62 Figure 45 Shear Specimen Drawing for ASTM Test D7078 wire lead pads coming from the gage in the ±45...wall is much stronger without the slots cut in it. This inward buckling motion tilts the three slots towards inward bulging and this crumpling of the...Structural Composites with Piezoelectric Micro-Constituents. Tech. rep., U.S. Army Research Office. 15. Thomas, J., Qidwai, M., Baucom, J., and Pogue, W
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Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz
NASA Technical Reports Server (NTRS)
Radisic, Vesna; Deal, W. R.; Mei, X. B.; Yoshida, Wayne; Liu, P. H.; Uyeda, Jansen; Lai, Richard; Samoska, Lorene; Fung, King Man; Gaier, Todd;
2010-01-01
In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems
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Multiple Differential-Amplifier MMICs Embedded in Waveguides
NASA Technical Reports Server (NTRS)
Kangaslahti, Pekka; Schlecht, Erich
2010-01-01
Compact amplifier assemblies of a type now being developed for operation at frequencies of hundreds of gigahertz comprise multiple amplifier units in parallel arrangements to increase power and/or cascade arrangements to increase gains. Each amplifier unit is a monolithic microwave integrated circuit (MMIC) implementation of a pair of amplifiers in differential (in contradistinction to single-ended) configuration. Heretofore, in cascading amplifiers to increase gain, it has been common practice to interconnect the amplifiers by use of wires and/or thin films on substrates. This practice has not yielded satisfactory results at frequencies greater than 200 Hz, in each case, for either or both of two reasons: Wire bonds introduce large discontinuities. Because the interconnections are typically tens of wavelengths long, any impedance mismatches give rise to ripples in the gain-vs.-frequency response, which degrade the performance of the cascade.
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Si-rich SiNx based Kerr switch enables optical data conversion up to 12 Gbit/s
Lin, Gong-Ru; Su, Sheng-Pin; Wu, Chung-Lun; Lin, Yung-Hsiang; Huang, Bo-Ji; Wang, Huai-Yung; Tsai, Cheng-Ting; Wu, Chih-I; Chi, Yu-Chieh
2015-01-01
Silicon photonic interconnection on chip is the emerging issue for next-generation integrated circuits. With the Si-rich SiNx micro-ring based optical Kerr switch, we demonstrate for the first time the wavelength and format conversion of optical on-off-keying data with a bit-rate of 12 Gbit/s. The field-resonant nonlinear Kerr effect enhances the transient refractive index change when coupling the optical data-stream into the micro-ring through the bus waveguide. This effectively red-shifts the notched dip wavelength to cause the format preserved or inversed conversion of data carried by the on-resonant or off-resonant probe, respectively. The Si quantum dots doped Si-rich SiNx strengthens its nonlinear Kerr coefficient by two-orders of magnitude higher than that of bulk Si or Si3N4. The wavelength-converted and cross-amplitude-modulated probe data-stream at up to 12-Gbit/s through the Si-rich SiNx micro-ring with penalty of −7 dB on transmission has shown very promising applicability to all-optical communication networks. PMID:25923653
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Si-rich SiNx based Kerr switch enables optical data conversion up to 12 Gbit/s.
Lin, Gong-Ru; Su, Sheng-Pin; Wu, Chung-Lun; Lin, Yung-Hsiang; Huang, Bo-Ji; Wang, Huai-Yung; Tsai, Cheng-Ting; Wu, Chih-I; Chi, Yu-Chieh
2015-04-29
Silicon photonic interconnection on chip is the emerging issue for next-generation integrated circuits. With the Si-rich SiNx micro-ring based optical Kerr switch, we demonstrate for the first time the wavelength and format conversion of optical on-off-keying data with a bit-rate of 12 Gbit/s. The field-resonant nonlinear Kerr effect enhances the transient refractive index change when coupling the optical data-stream into the micro-ring through the bus waveguide. This effectively red-shifts the notched dip wavelength to cause the format preserved or inversed conversion of data carried by the on-resonant or off-resonant probe, respectively. The Si quantum dots doped Si-rich SiNx strengthens its nonlinear Kerr coefficient by two-orders of magnitude higher than that of bulk Si or Si3N4. The wavelength-converted and cross-amplitude-modulated probe data-stream at up to 12-Gbit/s through the Si-rich SiNx micro-ring with penalty of -7 dB on transmission has shown very promising applicability to all-optical communication networks.
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Tuning a Tetrahertz Wire Laser
NASA Technical Reports Server (NTRS)
Qin, Qi; Williams, Benjamin S.; Kumar, Sushil; Reno, John L.; Hu, Qing
2009-01-01
Tunable terahertz lasers are desirable in applications in sensing and spectroscopy because many biochemical species have strong spectral fingerprints at terahertz frequencies. Conventionally, the frequency of a laser is tuned in a similar manner to a stringed musical instrument, in which pitch is varied by changing the length of the string (the longitudinal component of the wave vector) and/ or its tension (the refractive index). However, such methods are difficult to implement in terahertz semiconductor lasers because of their poor outcoupling efficiencies. Here, we demonstrate a novel tuning mechanism based on a unique 'wire laser' device for which the transverse dimension w is much much less than lambda. Placing a movable object close to the wire laser manipulates a large fraction of the waveguided mode propagating outside the cavity, thereby tuning its resonant frequency. Continuous single-mode redshift and blueshift tuning is demonstrated for the same device by using either a dielectric or metallic movable object. In combination, this enables a frequency tuning of approximately equal to 137 GHz (3.6%) from a single laser device at approximately equal to 3.8 THz.
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Liquid-phase deposition of thin Si films by ballistic electro-reduction
NASA Astrophysics Data System (ADS)
Ohta, T.; Gelloz, B.; Kojima, A.; Koshida, N.
2013-01-01
It is shown that the nanocryatalline silicon ballistic electron emitter operates in a SiCl4 solution without using any counter electrodes and that thin amorphous Si films are efficiently deposited on the emitting surface with no contaminations and by-products. Despite the large electrochemical window of the SiCl4 solution, electrons injected with sufficiently high energies preferentially reduce Si4+ ions at the interface. Using an emitter with patterned line emission windows, a Si-wires array can be formed in parallel. This low-temperature liquid-phase deposition technique provides an alternative clean process for power-effective fabrication of advanced thin Si film structures and devices.
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Surface Dangling-Bond States and Band Lineups in Hydrogen-Terminated Si, Ge, and Ge/Si Nanowires
NASA Astrophysics Data System (ADS)
Kagimura, R.; Nunes, R. W.; Chacham, H.
2007-01-01
We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels ɛ(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3±0.1eV below the vacuum level. Calculations of ɛ(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.
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NASA Astrophysics Data System (ADS)
Kim, Hyun-Suk; Hyun, Tae-Seon; Kim, Ho-Gi; Kim, Il-Doo; Yun, Tae-Soon; Lee, Jong-Chul
2006-07-01
The effect of texture with (100) and (110) preferred orientations on dielectric properties of Ba0.6Sr0.4TiO3 (BST) thin films grown on SrO (9nm) and CeO2 (70nm ) buffered Si substrates, respectively, was investigated. The coplanar waveguide (CPW) phase shifter using (100) oriented BST films on SrO buffered Si exhibited a much-enhanced figure of merit of 24.7°/dB, as compared to that (10.2°/dB) of a CPW phase shifter using (110) oriented BST films on CeO2 buffered Si at 12GHz. This work demonstrates that the microwave properties of the Si-integrated BST thin films are highly correlated with crystal orientation.
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Optical temperature sensing on flexible polymer foils
NASA Astrophysics Data System (ADS)
Sherman, Stanislav; Xiao, Yanfen; Hofmann, Meike; Schmidt, Thomas; Gleissner, Uwe; Zappe, Hans
2016-04-01
In contrast to established semiconductor waveguide-based or glass fiber-based integrated optical sensors, polymerbased optical systems offer tunable material properties, such as refractive index or viscosity, and thus provide additional degrees of freedom for sensor design and fabrication. Of particular interest in sensing applications are fully-integrated optical waveguide-based temperature sensors. These typically rely on Bragg gratings which induce a periodic refractive index variation in the waveguide so that a resonant wavelength of the structure is reflected.1,2 With broad-band excitation, a dip in the spectral output of the waveguide is thus generated at a precisely-defined wavelength. This resonant wavelength depends on the refractive index of the waveguide and the grating period, yet both of these quantities are temperature dependent by means of the thermo-optic effect (change in refractive index with temperature) and thermal expansion (change of the grating period with temperature). We show the design and fabrication of polymer waveguide-integrated temperature sensors based on Bragggratings, fabricated by replication technology on flexible PMMA foil substrates. The 175 μm thick foil serves as lower cladding for a polymeric waveguide fabricated from a custom-made UV-crosslinkable co-monomer composition. The fabrication of the grating structure includes a second replication step into a separate PMMA-foil. The dimensions of the Bragg-gratings are determined by simulations to set the bias point into the near infrared wavelength range, which allows Si-based detectors to be used. We present design considerations and performance data for the developed structures. The resulting sensor's signal is linear to temperature changes and shows a sensitivity of -306 nm/K, allowing high resolution temperature measurements.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk
We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less
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NASA Astrophysics Data System (ADS)
Lee, El-Hang; Lee, Hyun S.; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.
2007-05-01
We report on the design of micro-ring resonator optical sensors for integration on what we call optical printed circuit boards (O-PCBs). The objective is to realize application-specific O-PCBs, either on hard board or on flexible board, by integrating micro/nano-scale optical sensors for compact, light-weight, low-energy, high-speed, intelligent, and environmentally friendly processing of information. The O-PCBs consist of two-dimensional planar arrays of micro/nano-scale optical wires, circuits and devices that are interconnected and integrated to perform the functions of sensing and then storing, transporting, processing, switching, routing and distributing optical signals that have been collected by means of sensors. For fabrication, the polymer and organic optical wires and waveguides are first fabricated on a board and are used to interconnect and integrate sensors and other micro/ nano-scale photonic devices. Here, in our study, we focus on the sensors based on the micro-ring structures. We designed bio-sensors using silicon based micro-ring resonator. We investigate the characteristics such as sensitivity and selectivity (or quality factor) of micro-ring resonator for their use in bio-sensing application. We performed simulation studies on the quality factor of micro-ring resonators by varying the radius of the ring resonators and the separation between adjacent waveguides. We introduce the effective coupling coefficient as a realistic value to describe the strength of the coupling in micro-ring resonators.
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NASA Astrophysics Data System (ADS)
Dubey, R. S.; Ganesan, V.
2017-11-01
Passive devices made of SiO2/TiO2 bilayers have been demanded for the molding of electromagnetic waves in optical waveguides, microcavities, solar cells, sensors and so on. Here, we present the fabrication and characterization of SiO2/TiO2 multilayer structures as reflectors. The refractive indices were found to be 1.43 & 2.0 with thicknesses 230 & 70 nm corresponding to the SiO2 and TiO2 films respectively. AFM surface topography study showed little bit large surface roughness of the TiO2 as compared to SiO2 film due to its large grain size. The corresponding reflectance enhancement was noticed with the increased number of bilayers of SiO2/TiO2 films. Furthermore, six alternate layers of SiO2/TiO2 demonstrated the as much as 78% reflectance in the near-infrared wavelength range.
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Wen, C-Y; Reuter, M C; Tersoff, J; Stach, E A; Ross, F M
2010-02-10
We use real-time observations of the growth of copper-catalyzed silicon nanowires to determine the nanowire growth mechanism directly and to quantify the growth kinetics of individual wires. Nanowires were grown in a transmission electron microscope using chemical vapor deposition on a copper-coated Si substrate. We show that the initial reaction is the formation of a silicide, eta'-Cu(3)Si, and that this solid silicide remains on the wire tips during growth so that growth is by the vapor-solid-solid mechanism. Individual wire directions and growth rates are related to the details of orientation relation and catalyst shape, leading to a rich morphology compared to vapor-liquid-solid grown nanowires. Furthermore, growth occurs by ledge propagation at the silicide/silicon interface, and the ledge propagation kinetics suggest that the solubility of precursor atoms in the catalyst is small, which is relevant to the fabrication of abrupt heterojunctions in nanowires.
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Suga, Hiroshi; Sumiya, Touru; Furuta, Shigeo; Ueki, Ryuichi; Miyazawa, Yosuke; Nishijima, Takuya; Fujita, Jun-ichi; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa
2012-10-24
A method for fabricating single-crystalline nanogaps on Si substrates was developed. Polycrystalline Pt nanowires on Si substrates were broken down by current flow under various gaseous environments. The crystal structure of the nanogap electrode was evaluated using scanning electron microscopy and transmission electron microscopy. Nanogap electrodes sandwiched between Pt-large-crystal-grains were obtained by the breakdown of the wire in an O(2) or H(2) atmosphere. These nanogap electrodes show intense spots in the electron diffraction pattern. The diffraction pattern corresponds to Pt (111), indicating that single-crystal grains are grown by the electrical wire breakdown process in an O(2) or H(2) atmosphere. The Pt wires that have (111)-texture and coherent boundaries can be considered ideal as interconnectors for single molecular electronics. The simple method for fabrication of a single-crystalline nanogap is one of the first steps toward standard nanogap electrodes for single molecular instruments and opens the door to future research on physical phenomena in nanospaces.
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NASA Astrophysics Data System (ADS)
Han, Bing; Tao, Wang; Chen, Yanbin; Li, Hao
2017-08-01
In the current work, T-joints consisting of 2.0 mm thick 2060-T8/2099-T83 aluminum-lithium alloys for aircraft fuselage panels have been fabricated by double-sided fiber laser beam welding with different filler wires. A new type wire CW3 (Al-6.2Cu-5.4Si) was studied and compared with conventional wire AA4047 (Al-12Si) mainly on microstructure and mechanical properties. It was found that the main combined function of Al-6.2%Cu-5.4%Si in CW3 resulted in considerable improvements especially on intergranular strength, hot cracking susceptibility and hoop tensile properties. Typical non-dendritic equiaxed zone (EQZ) was observed along welds' fusion boundary. Hot cracks and fractures during the load were always located within the EQZ, however, this typical zone could be restrained by CW3, effectively. Furthermore, changing of the main intergranular precipitated phase within the EQZ from T phase by AA4047 to T2 phase by CW3 also resulted in developments on microscopic intergranular reinforcement and macroscopic hoop tensile properties. In addition, bridging caused by richer substructure dendrites within CW3 weld's columnar zone resulted in much lower hot cracking susceptibility of the whole weld than AA4047.
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Innovative Ge Quantum Dot Functional Sensing and Metrology Devices
2017-08-21
information latency and power consumption . In contrast, optical interconnects have shown tremendous promise for replacing electrical wires thanks to...single oxidation step of Si0.85Ge0.15 nano-pillars patterned over a buffer layer of Si3N4 on top of the n-Si substrate. During the high- temperature ...exquisitely-controlled dynamic balance between the fluxes of oxygen and silicon interstitials. Results and Discussion: 1. Self-organized, gate
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Arrays of Carbon Nanotubes as RF Filters in Waveguides
NASA Technical Reports Server (NTRS)
Hoppe, Daniel; Hunt, Brian; Hoenk, Michael; Noca, Flavio; Xu, Jimmy
2003-01-01
Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.
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Fabrication of vertical nanowire resonators for aerosol exposure assessment
NASA Astrophysics Data System (ADS)
Merzsch, Stephan; Wasisto, Hutomo Suryo; Stranz, Andrej; Hinze, Peter; Weimann, Thomas; Peiner, Erwin; Waag, Andreas
2013-05-01
Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosol nanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ion etching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspect ratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact mode to serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to 5 μm). In dry etching process, the etch rate is set high of 1.5 μm/min to avoid underetching. The etch profiles of Si wires can be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting the etching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificial thermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 μm in length. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanning electron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from the topside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 μm during its resonant frequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of a portable aerosol resonant sensor.
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NASA Astrophysics Data System (ADS)
Kondo, K.; Baba, T.
2018-03-01
We demonstrate an adiabatic wavelength redshift using dynamic carrier depletion. Free carriers are first induced through two-photon absorption of a control pulse and then extracted by a reverse-biased p-i-n diode formed on a Si photonic crystal waveguide, resulting in rapid carrier depletion. A copropagating signal pulse is redshifted by the consequent increase in refractive index. We experimentally evaluated the dynamics of the carrier depletion by the pump-probe method and explored suitable conditions for adiabatic redshift. The signal's redshift was observed, and was confirmed to originate in the dynamic carrier depletion. The redshift was experimentally determined as 0.21 nm.
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Design of novel SOI 1 × 4 optical power splitter using seven horizontally slotted waveguides
NASA Astrophysics Data System (ADS)
Katz, Oded; Malka, Dror
2017-07-01
In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530-1565 nm) with excess loss better than 0.23 dB.
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Athermal operation of silicon waveguides: spectral, second order and footprint dependencies.
Raghunathan, Vivek; Ye, Winnie N; Hu, Juejun; Izuhara, Tomoyuki; Michel, Jurgen; Kimerling, Lionel
2010-08-16
We report the design criteria and performance of Si ring resonators for passive athermal applications in wavelength division multiplexing (WDM). The waveguide design rules address i) positive-negative thermo-optic (TO) composite structures, ii) resonant wavelength dependent geometry to achieve constant confinement factor (Gamma), and iii) observation of small residual second order effects. We develop exact design requirements for a temperature dependent resonant wavelength shift (TDWS) of 0 pm/K and present prototype TDWS performance of 0.5 pm/K. We evaluate the materials selection tradeoffs between high-index contrast (HIC) and low-index contrast (LIC) systems and show, remarkably, that FSR and footprint become comparable under the constraint of athermal design.
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Quality of Metal Deposited Flux Cored Wire With the System Fe-C-Si-Mn-Cr-Mo-Ni-V-Co
NASA Astrophysics Data System (ADS)
Gusev, Aleksander I.; Kozyrev, Nikolay A.; Osetkovskiy, Ivan V.; Kryukov, Roman E.; Kozyreva, Olga A.
2017-10-01
Studied the effect of the introduction of vanadium and cobalt into the charge powder fused wire system Fe-C-Si-Mn-Cr-Ni-Mo-V, used in cladding assemblies and equipment parts and mechanisms operating under abrasive and abrasive shock loads. the cored wires samples were manufactured in the laboratory conditions and using appropriate powder materials and as a carbonfluoride contained material were used the dust from gas purification of aluminum production, with the following components composition, %: Al2O3 = 21-46.23; F = 18-27; Na2O = 8-15; K2O = 0.4-6; CaO = 0.7-2.3; Si2O = 0.5-2.48; Fe2O3 = 2.1-3.27; C = 12.5-30.2; MnO = 0.07-0.9; MgO = 0.06-0.9; S = 0.09-0.19; P = 0.1-0.18. Surfacing was produced on the St3 metal plates in 6 layers under the AN-26C flux by welding truck ASAW-1250. Cutting and preparation of samples for research had been implemented. The chemical composition and the hydrogen content of the weld metal were determined by modern methods. The hardness and abrasion rate of weld metal had been measured. Conducted metallographic studies of weld metal: estimated microstructure, grain size, contamination of oxide non-metallic inclusions. Metallographic studies showed that the microstructure of the surfaced layer by cored wire system Fe-C-Si-Mn-Cr-Mo-Ni-V-Co is uniform, thin dendrite branches are observed. The microstructure consists of martensite, which is formed inside the borders of the former austenite grain retained austenite present in small amounts in the form of separate islands, and thin layers of δ-ferrite, which is located on the borders of the former austenite grains. Carried out an assessment the effect of the chemical composition of the deposited metal on the hardness and wear and hydrogen content. In consequence of multivariate correlation analysis, it was determined dependence to the hardness of the deposited layer and the wear resistance of the mass fraction of the elements included in the flux-cored wires of the system Fe-C-Si-Mn-Cr-Mo-Ni-V-Co. The calculated value of the average approximation error suggests that the dependence is adequate and can be used to determine the resulting indicators. These dependencies can be used to predict the hardness of the deposited layer and its wear resistance while changing the chemical composition of the weld metal.
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Topology-optimized silicon photonic wire mode (de)multiplexer
NASA Astrophysics Data System (ADS)
Frellsen, Louise F.; Frandsen, Lars H.; Ding, Yunhong; Elesin, Yuriy; Sigmund, Ole; Yvind, Kresten
2015-02-01
We have designed and for the first time experimentally verified a topology optimized mode (de)multiplexer, which demultiplexes the fundamental and the first order mode of a double mode photonic wire to two separate single mode waveguides (and multiplexes vice versa). The device has a footprint of ~4.4 μm x ~2.8 μm and was fabricated for different design resolutions and design threshold values to verify the robustness of the structure to fabrication tolerances. The multiplexing functionality was confirmed by recording mode profiles using an infrared camera and vertical grating couplers. All structures were experimentally found to maintain functionality throughout a 100 nm wavelength range limited by available laser sources and insertion losses were generally lower than 1.3 dB. The cross talk was around -12 dB and the extinction ratio was measured to be better than 8 dB.
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Guo, X S; Chen, Y Q; Yang, X L; Wang, L R
2005-01-01
Surface acoustic wave (SAW) devices based on shear-horizontal (SH) waves can be used as mass-sensitive immunosensors. This paper presents a novel SH-SAW sensor to detect anti-immunoglobulin (IgG) molecules by means of the antibody-antigen binding mechanism. The sensor system comprising dual delay lines was fabricated on 36° Y-X LiTaO
3 substrate. A SiO2 layer was used as love mode waveguiding layers, well as insulating and chemically resistant protective layer. Moreover, flow injection analysis (FIA) method was used for continuous detection the protein molecules. The protein A was immobilized on the optional surface of the gold layer, then coupled with IgG to adsorb the antigens to be measured in the protein solution. The operational frequency of the system changed due to the interaction of antibody-antigen binding. The experimental result demonstrates the sensor has stable frequency response to the mass loading effect of the various anti-IgG concentrations with the sensitivity up to 3.3ng/ml/Hz. -
NASA Astrophysics Data System (ADS)
Untila, Gennady; Chebotareva, Alla; Kost, Tatiana; Salazkin, Sergei; Shaposhnikova, Vera; Shvarts, Maxim
2017-09-01
Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are "soldered" during the low-temperature lamination process to the fingers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the α-Si/c-Si heterojunction cells. Here we describe a solar cell design in which wires are attached to TCO layers using transparent conductive polymer (TCP) films. To this end, we have synthesized a number of thermoplastics, poly(arylene ether ketone) copolymers (co-PAEKs), containing phthalide in their main chain. The fraction of phthalide-containing units in the copolymers was p = 3, 5, 15, and 50 mol %. With increasing p, the peak strain temperature of the co-PAEKs rises from 205 to 290 °C and their optical band gap and refractive index increase from 3.12 to 3.15 eV and from 1.6 to 1.614, respectively. The copolymers have a negligible absorption coefficient in the wavelength range 400- 1100 nm. When exposed to an excess pressure of 1 atm or above, co-PAEK films less than 30 µm in thickness undergo a transition from a dielectric to a conductive state. The resistivity (ρC) of wire/TCP/TCO (ITO = In2O3:Sn and IFO = In2O3:F) contacts ranges from 0.37 to 1.43 mΩ cm2. The polymer with the highest phthalide content (p = 50 mol %) has the lowest ρC. The average work of adhesion per unit area determined by pulling off the wires from the polymer surface depends on both the phthalide content of the co-PAEKs and their reduced viscosity, ranging from 14.3 to 43.5 N/cm. The highest value was obtained for the co-PAEK with p = 50 mol %. We have fabricated low-concentration bifacial IFO/(n+pp+)Cz-Si/ITO solar cells with a wire contact grid attached to IFO and ITO using a co-PAEK film. The efficiency of the best cell under 1× to 7× front/rear illumination was determined to be 18.3-18.9%/15.0-15.6%.
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Methods and apparatus for vertical coupling from dielectric waveguides
Yaacobi, Ami; Cordova, Brad Gilbert
2014-06-17
A frequency-chirped nano-antenna provides efficient sub-wavelength vertical emission from a dielectric waveguide. In one example, this nano-antenna includes a set of plasmonic dipoles on the opposite side of a SiYV.sub.4 waveguide from a ground plane. The resulting structure, which is less than half a wavelength long, emits a broadband beam (e.g., >300 nm) that can be coupled into an optical fiber. In some embodiments, a diffractive optical element with unevenly shaped regions of high- and low-index dielectric material collimates the broadband beam for higher coupling efficiency. In some cases, a negative lens element between the nano-antenna and the diffractive optical element accelerates the emitted beam's divergence (and improves coupling efficiency), allowing for more compact packaging. Like the diffractive optical element, the negative lens element includes unevenly shaped regions of high- and low-index dielectric material that can be designed to compensate for aberrations in the beam emitted by the nano-antenna.
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NASA Astrophysics Data System (ADS)
Galdun, L.; Ryba, T.; Prida, V. M.; Zhukova, V.; Zhukov, A.; Diko, P.; Kavečanský, V.; Vargova, Z.; Varga, R.
2018-05-01
Large scale production of single crystalline phase of Heusler Co2FeSi alloy microwire is reported. The long microwire (∼1 km) with the metallic nucleus diameter of about 2 μm is characterized by well oriented monocrystalline structure (B2 phase, with the lattice parameter a = 5.615 Å). Moreover, the crystallographic direction [1 0 1] is parallel to the wire's axis along the entire length. Additionally, the wire is characterized by exhibiting a high Curie temperature (Tc > 800 K) and well-defined magnetic anisotropy mainly governed by shape. Electrical resistivity measurement reveals the exponential suppression of the electron-magnon scattering which provides strong evidence on the half-metallic behaviour of this material in the low temperature range.
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Dewetting of patterned solid films: Towards a predictive modelling approach
NASA Astrophysics Data System (ADS)
Trautmann, M.; Cheynis, F.; Leroy, F.; Curiotto, S.; Pierre-Louis, O.; Müller, P.
2017-06-01
Owing to its ability to produce an assembly of nanoislands with controllable size and locations, the solid state dewetting of patterned films has recently received great attention. A simple Kinetic Monte Carlo model based on two reduced energetic parameters allows one to reproduce experimental observations of the dewetting morphological evolution of patterned films of Si(001) on SiO2 (or SOI for Silicon-on-Insulator) with various pattern designs. Thus, it is now possible to use KMC to drive further experiments and to optimize the pattern shapes to reach a desired dewetted structure. Comparisons between KMC simulations and dewetting experiments, at least for wire-shaped patterns, show that the prevailing dewetting mechanism depends on the wire width.
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Silicon nitride back-end optics for biosensor applications
NASA Astrophysics Data System (ADS)
Romero-García, Sebastian; Merget, Florian; Zhong, Frank C.; Finkelstein, Hod; Witzens, Jeremy
2013-05-01
Silicon nitride (SiN) is a promising candidate material for becoming a standard high-performance solution for integrated biophotonics applications in the visible spectrum. As a key feature, its compatibility with the complementary-oxidemetal- semiconductor (CMOS) technology permits cost reduction at large manufacturing volumes that is particularly advantageous for manufacturing consumables. In this work, we show that the back-end deposition of a thin SiN film enables the large light-cladding interaction desirable for biosensing applications while the refractive index contrast of the technology (Δn ≍ 0.5) also enables a considerable level of integration with reduced waveguide bend radii. Design and experimental validation also show that several advantages are derived from the moderate SiN/SiO2 refractive index contrast, such as lower scattering losses in interconnection waveguides and relaxed tolerances to fabrication imperfections as compared to higher refractive index contrast material systems. As a drawback, a moderate refractive index contrast also makes the implementation of compact grating couplers more challenging, due to the fact that only a relatively weak scattering strength can be achieved. Thereby, the beam diffracted by the grating tends to be rather large and consequently exhibit stringent angular alignment tolerances. Here, we experimentally demonstrate how a proper design of the bottom and top cladding oxide thicknesses allows reduction of the full-width at half maximum (FWHM) and alleviates this problem. Additionally, the inclusion of a CMOS-compatible AlCu/TiN bottom reflector further decreases the FWHM and increases the coupling efficiency. Finally, we show that focusing grating designs greatly reduce the device footprint without penalizing the device metrics.
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Degenerate critical coupling in all-dielectric metasurface absorbers
Ming, Xianshun; Liu, Xinyu; Sun, Liqun; ...
2017-09-27
We develop the theory of all-dielectric absorbers based on temporal coupled mode theory (TCMT), with parameters extracted from eigenfrequency simulations. An infinite square array of cylindrical resonators embedded in air is investigated, and we find that it supports two eigenmodes of opposite symmetry that are each responsible for half of the total absorption. The even and odd eigenmodes are found to be the hybrid electric (EH111) and hybrid magnetic (HE111) waveguide modes of a dielectric wire of circular cross section, respectively. The geometry of the cylindrical array is shown to be useful for individual tuning of the radiative loss ratesmore » of the eigenmodes, thus permitting frequency degeneracy. Further, by specifying the resonators’ loss tangent, the material loss rate can be made to equal the radiative loss rate, thus achieving a state of degenerate critical coupling and perfect absorption. Our results are supported by S-parameter simulations, and agree well with waveguide theory.« less
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NASA Astrophysics Data System (ADS)
Hor, Yew Fong
2002-08-01
This thesis involves the design, fabrication and characterization of an integrated optical waveguide sensor. Prior to fabrication, design parameters of the waveguide need to be determined and optimized. The waveguide parameters such as waveguide dimension and the refractive index of the core and cladding are obtained from the single-mode cutoff frequency calculated using either analytical or numerical methods. In this thesis, details of analytical calculations to determine the cutoff frequency in terms of the waveguide parameters will be presented. The method discussed here is Marcatili's approximation. The purpose is to solve the scalar wave equation derived from Maxwell's equations because it describes the mode properties inside the waveguides. The Finite Element Method is used to simulate the electric and magnetic fields inside the waveguides and to determine the propagation characteristics in optical waveguides. This method is suited for problems involving complicated geometries and variable index of refraction. Fabrication of the Integrated Mach-Zehnder Interferometer sensor involves several important standard processes such as Chemical Vapor Deposition (CVD) for thin film fabrication, photolithography for mask transfer, and etching for ridge waveguide formation. The detailed fabrication procedures of the tested Mach-Zehnder Interferometer sensors are discussed. After completion of the sensor fabrication processes, the characterizations were carried out for the thin film of SiO2 and PSG, the waveguides and the Y-junction separately. The waveguides were analyzed to make sure that the sensors are working as expected. The experimental testing on the separated waveguide portions of the first batch Integrated Mach-Zehnder Interferometer (MZI) sensors are described. These testing procedures were also performed for the subsequent fabricated batches of the integrated MZI sensors until optimum performance is achieved. A new concept has been proposed for chemical sensing applications. The novelty of the approach is mainly based on utilizing the multi-wavelength or broadband source instead of single wavelength input to the integrated MZI. The shifting of output spectra resulting from the interference has shown the ability of the MZI to analyze the different concentrations of a chemical analyte. The sensitivity of the sensor is also determined from the plot of intensity versus concentration, which is around 0.013 (%ml)-1 and 0.007 (%ml)-l for the white light source and the 1.5 mum broadband source, respectively, while the lowest detectable concentration of ethanol for the sensor detection is around 8% using a intensity variation method and 0.6% using a peak wavelength variation method.
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Trace-gas Spectroscopy of Methane on a Silicon Photonic Chip
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Eric; Xiong, Chi; Martin, Yves
Recent advances in hybrid integrated silicon photonic (SiPh) technologies are enabling the migration of conventional free-space optical spectroscopic sensors onto a compact on-chip platform [1-3]. In addition to the small spatial footprint and power efficiency, we envision such sensors to be scalably manufactured using existing CMOS-compatible foundry processes, thus providing disruptive SWaP-C (size, weight, power, and cost) benefits in contrast to commercially available optical sensors. Initial demonstration of evanescent TDLAS (tunable diode laser absorption spectroscopy) of methane (CH4) on a passive SiPh waveguide has indicated minimum fractional absorption of (αL)min = 3.3×10-5 Hz-1/2, which is on-par with state-of-art open-path TDLASmore » sensor systems [4]. Given the general recent movement toward cleaner fuels, CH4 fugitive emissions monitoring is of significant interest given the extremely high radiative forcing potential [5]. For a nominal waveguide length of 30 cm with Γ = 25 % evanescent exposure, this corresponds to ~ 10 ppmv detection sensitivity at 1 s integration time, and further sensitivity enhancement is expected with even longer waveguides, as the laser RIN typically dominates our measurements at nominal waveguide lengths. Despite the excellent sensitivities for short-term integration periods, long-term measurements (> 10 s) are potentially limited on a silicon platform due to the high material thermo-optic coefficient, resulting in significant susceptibility of Fabry-Perot etalons to drift in the presence of even small (~ 1 mK) thermal fluctuations. To this end, customized spectral fitting algorithms have played a significant role in both fringe drift mitigation and peak detection fidelity (e.g. in the presence of a passing CH4 plume), which are crucial for enhancing long-term stability without the need for frequent sensor recalibration. A variety of spectral algorithms have been designed for this purpose, and details will be presented at the meeting.« less
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NASA Technical Reports Server (NTRS)
Scardelletti, Maximilian C.; Stanton, John W.; Ponchak, George E.; Jordan, Jennifer L.; Zorman, Christian A.
2010-01-01
This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.
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Hossain, Mozakkar; Kumar, Gundam Sandeep; Barimar Prabhava, S N; Sheerin, Emmet D; McCloskey, David; Acharya, Somobrata; Rao, K D M; Boland, John J
2018-05-22
Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.
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A method for building low loss multi-layer wiring for superconducting microwave devices
NASA Astrophysics Data System (ADS)
Dunsworth, A.; Barends, R.; Chen, Yu; Chen, Zijun; Chiaro, B.; Fowler, A.; Foxen, B.; Jeffrey, E.; Kelly, J.; Klimov, P. V.; Lucero, E.; Mutus, J. Y.; Neeley, M.; Neill, C.; Quintana, C.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T. C.; Neven, H.; Martinis, John M.; Megrant, A.
2018-02-01
Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of ˜3.9 × 10-8 per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T1s) in excess of 30 μs in gmon devices.
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Optical fiber endface biosensor based on resonances in dielectric waveguide gratings
NASA Astrophysics Data System (ADS)
Wawro, Debra D.; Tibuleac, Sorin; Magnusson, Robert; Liu, Hanli
2000-05-01
A new fiber optic sensor integrating dielectric diffraction gratings and thin films on optical fiber endfaces is prosed for biomedical sensing applications. This device utilizes a resonant dielectric waveguide grating structure fabricated on an optical fiber endface to probe reactions occurring in a sensing layer deposited on its surface. The operation of this sensor is based upon a fundamental resonance effect that occurs in waveguide gratings. An incident broad- spectrum signal is guided within an optical fiber and is filtered to reflect or transmit a desired spectral band by the diffractive thin film structure on its endface. Slight changes in one or more parameters of the waveguide grating, such as refractive index or thickness, can result in a responsive shift of the reflected or transmitted spectral peak that can be detected with spectroscopic instruments. This new sensor concept combines improved sensitivity and accuracy with attractive features found separately in currently available fiber optic sensors, such as large dynamic range, small sensing proximity, real time operation, and remote sensing. Diffractive elements of this type consisting of a photoresist grating on a Si3N4 waveguide have been fabricated on multimode optical fiber endfaces with 100 micrometers cores. Preliminary experimental tests using a tunable Ti:sapphire laser indicate notches of 18 percent in the transmission spectrum of the fiber endface guided-mode resonance devices. A theoretical analysis of the device performance capabilities is presented and applied to evaluate the feasibility and potential advantages of this bioprobe.
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Optical clock signal distribution and packaging optimization
NASA Astrophysics Data System (ADS)
Wu, Linghui
Polymer-based waveguides for optoelectronic interconnects and packagings were fabricated by a fabrication process that is compatible with the Si CMOS packaging process. An optoelectronic interconnection layer (OIL) for the high-speed massive clock signal distribution for the Cray T-90 supercomputer board employing optical multimode channel waveguides in conjunction with surface-normal waveguide grating couplers and a 1-to-2 3 dB splitter was constructed. Equalized optical paths were realized using an optical H-tree structure having 48 optical fanouts. This device could be increased to 64 without introducing any additional complications. A 1-to-48 fanout H-tree structure using Ultradel 9000D series polyimide was fabricated. The propagation loss and splitting loss have been measured as 0.21 dB/cm and 0.4 dB/splitter at 850 nm. The power budget was discussed, and the H-tree waveguide fully satisfies the power budget requirement. A tapered waveguide coupler was employed to match the mode profile between the single-mode fiber and the multimode channel waveguides of the OIL. A thermo-optical based multimode switch was designed, fabricated, and tested. The finite difference method was used to simulate the thermal distribution in the polymer waveguide. Both stable and transient conditions have been calculated. The thermo-optical switch was fabricated and tested. The switching speed of 1 ms was experimentally confirmed, fitting well with the simulation results. Thermo-optic switching for randomly polarized light at wavelengths of 850 nm was experimental confirmed, as was a stable attenuation of 25 dB. The details of tapered waveguide fabrication were investigated. Compression-molded 3-D tapered waveguides were demonstrated for the first time. Not only the vertical depth variation but also the linear dimensions of the molded waveguides were well beyond the limits of what any other conventional waveguide fabrication method is capable of providing. Molded waveguides with vertical depths of 100 mum at one end and 5 mum at the other end and lengths of 1.0 cm were fabricated using a photolime gel polymer. A propagation loss of 0.5 dB/cm was achieved when light was coupled from the 5 mum x 5 mum end to the 100 mum x 100 mum end and that of 1.1 dB/cm was observed when light was coupled from the 100 mum x 100 mum end to the 5 mum x 5 mum. By confining the energy to the fundamental mode when coupling from the large end to the small end, low-loss packaging can be achieved bi-directionally. 3-D compression-molded polymeric waveguides present a promising solution to bridging the huge dynamic range of different optoelectronic device-depths varying from a few microns to several hundred microns.
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Flux-pinning and inhomogeneity in MgB 2 /Fe wires
NASA Astrophysics Data System (ADS)
Husnjak, O.; Babić, E.; Kušević, I.; Wang, X. L.; Soltanian, S.; Dou, S. X.
2007-08-01
Transport critical current densities Jc and irreversibility fields B of undoped and nanoparticle doped (10 wt% SiC) Fe-sheathed MgB 2 wires were measured from 2 to 40 K in magnetic field B≤16 T. For the best segments of wires (≤1 cm) both the magnitude and field variations of Jc and the pinning force density Fp=JcB depend only on the magnitude of B, hence the strength of flux-pinning. B of doped wire for T≤30 K is ˜1.4 times larger than that of undoped and reaches that of NbTi (10 T at 4.2 K) already at 20 K. Accordingly, its high-field Jcs and Fps are large, typically three times larger than the best literature results, and are limited by the porosity and inhomogeneity of the superconducting cores in present-day MgB 2 wires.
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Waveguide-coupled resonator filters on AlN on silicon
NASA Technical Reports Server (NTRS)
Liaw, H. M.; Cameron, T. P.; Hunt, W. D.; Hickernell, F. S.
1994-01-01
In the effort to continually reduce the size and cost of wireless communications products the level of integration has improved dramatically in recent years. In order to reduce future generations of wireless systems to single chip form, there is a need for on-chip filtering capabilities. In this paper, the first report of an experimental waveguide-coupled resonator filter for cellular radio applications is presented. Measured results indicate a typical insertion loss of 26 dB at a center frequency of 132 MHz using a 2 um AlN film on (001) less than 110 greater than Si. In addition, a laser probe analysis has been conducted and a theoretical analysis of the first order reflection coefficients is presented.
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RF Transmission Lines on Silicon Substrates
NASA Technical Reports Server (NTRS)
Ponchak, George E.
1999-01-01
A review of RF transmission lines on silicon substrates is presented. Through measurements and calculated results, it is shown that attenuation is dominated by conductor loss if silicon substrates with a resistivity greater than 2500 Ohm-cm are used. Si passivation layers affect the transmission line attenuation; however, measured results demonstrate that passivation layers do not necessarily increase attenuation. If standard, low resistivity Si wafers must be used, alternative transmission lines such as thin film microstrip and Co-Planar Waveguide (CPW) on thick polyimide layers must be used. Measured results presented here show that low loss per unit length is achievable with these transmission lines.
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Flux pinning and inhomogeneity in magnetic nanoparticle doped MgB2/Fe wires
NASA Astrophysics Data System (ADS)
Novosel, Nikolina; Pajić, Damir; Mustapić, Mislav; Babić, Emil; Shcherbakov, Andrey; Horvat, Joseph; Skoko, Željko; Zadro, Krešo
2010-06-01
The effects of magnetic nanoparticle doping on superconductivity of MgB2/Fe wires have been investigated. Fe2B and SiO2-coated Fe2B particles with average diameters 80 and 150 nm, respectively, were used as dopands. MgB2 wires with different nanoparticle contents (0, 3, 7.5, 12 wt.%) were sintered at temperature 750°C. The magnetoresistivity and critical current density Jc of wires were measured in the temperature range 2-40 K in magnetic field B <= 16 T. Both transport and magnetic Jc were determined. Superconducting transition temperature Tc of doped wires decreases quite rapidly with doping level (~ 0.5 K per wt.%). This results in the reduction of the irreversibility fields Birr(T) and critical current densities Jc(B,T) in doped samples (both at low (5 K) and high temperatures (20 K)). Common scaling of Jc(B,T) curves for doped and undoped wires indicates that the main mechanism of flux pinning is the same in both types of samples. Rather curved Kramer's plots for Jc of doped wires imply considerable inhomogeneity.
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NASA Astrophysics Data System (ADS)
Bobzin, K.; Ernst, F.; Zwick, J.; Schlaefer, T.; Cook, D.; Nassenstein, K.; Schwenk, A.; Schreiber, F.; Wenz, T.; Flores, G.; Hahn, M.
2008-09-01
Engine blocks of modern passenger car engines are generally made of light metal alloys, mostly hypoeutectic AlSi-alloys. Due to their low hardness, these alloys do not meet the tribological requirements of the system cylinder running surface—piston rings—lubricating oil. In order to provide a suitable cylinder running surface, nowadays cylinder liners made of gray cast iron are pressed in or cast into the engine block. A newer approach is to apply thermal spray coatings onto the cylinder bore walls. Due to the geometric conditions, the coatings are applied with specifically designed internal diameter thermal spray systems. With these processes a broad variety of feedstock can be applied, whereas mostly low-alloyed carbon steel feedstock is being used for this application. In the context of this work, an iron-based wire feedstock has been developed, which leads to a nanocrystalline coating. The application of this material was carried out with the Plasma Transferred Wire Arc system. AlMgSi0.5 liners were used as substrates. The coating microstructure and the properties of the coatings were analyzed.
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NASA Astrophysics Data System (ADS)
Novak, Joseph
Optical biological sensors are widely used in the fields of medical testing, water treatment and safety, gene identification, and many others due to advances in nanofabrication technology. This work focuses on the design of fiber-coupled Mach-Zehnder Interferometer (MZI) based biosensors fabricated on silicon-on-insulator (SOI) wafer. Silicon waveguide sensors are designed with multimode and single-mode dimensions. Input coupling efficiency is investigated by design of various taper structures. Integration processing and packaging is performed for fiber attachment and enhancement of input coupling efficiency. Optical guided-wave sensors rely on single-mode operation to extract an induced phase-shift from the output signal. A silicon waveguide MZI sensor designed and fabricated for both multimode and single-mode dimensions. Sensitivity of the sensors is analyzed for waveguide dimensions and materials. An s-bend structure is designed for the multimode waveguide to eliminate higher-order mode power as an alternative to single-mode confinement. Single-mode confinement is experimentally demonstrated through near field imaging of waveguide output. Y-junctions are designed for 3dB power splitting to the MZI arms and for power recombination after sensing to utilize the interferometric function of the MZI. Ultra-short 10microm taper structures with curved geometries are designed to improve insertion loss from fiber-to-chip without significantly increasing device area and show potential for applications requiring misalignment tolerance. An novel v-groove process is developed for self-aligned integration of fiber grooves for attachment to sensor chips. Thermal oxidation at temperatures from 1050-1150°C during groove processing creates an SiO2 layer on the waveguide end facet to protect the waveguide facet during integration etch processing without additional e-beam lithography processing. Experimental results show improvement of insertion loss compared to dicing preparation and Focused Ion Beam methods using the thermal oxidation process.
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Kwon, Soonbang; Jang, Seonghoon; Choi, Jae-Wan; Choi, Sanghyeon; Jang, Sukjae; Kim, Tae-Wook; Wang, Gunuk
2017-12-13
The controllability of switching conductive filaments is one of the central issues in the development of reliable metal-oxide resistive memory because the random dynamic nature and formation of the filaments pose an obstacle to desirable switching performance. Here, we introduce a simple and novel approach to control and form a single silicon nanocrystal (Si-NC) filament for use in SiO x memory devices. The filament is formed with a confined vertical nanoscale gap by using a well-defined single vertical truncated conical nanopore (StcNP) structure. The physical dimensions of the Si-NC filaments such as number, size, and length, which have a significant influence on the switching properties, can be simply engineered by the breakdown of an Au wire through different StcNP structures. In particular, we demonstrate that the designed SiO x memory junction with a StcNP of pore depth of ∼75 nm and a bottom diameter of ∼10 nm exhibited a switching speed of up to 6 ns for both set and reset process, significantly faster than reported SiO x memory devices. The device also exhibited a high ON-OFF ratio, multistate storage ability, acceptable endurance, and retention stability. The influence of the physical dimensions of the StcNP on the switching features is discussed based on the simulated temperature profiles of the Au wire and the nanogap size generated inside the StcNP structure during electromigration.
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Mechanical properties and aesthetics of FRP orthodontic wire fabricated by hot drawing.
Imai, T; Watari, F; Yamagata, S; Kobayashi, M; Nagayama, K; Toyoizumi, Y; Nakamura, S
1998-12-01
The FRP wires 0.5 mm in diameter with a multiple fiber structure were fabricated by drawing the fiber polymer complex at 250 degrees C for an esthetic, transparent orthodontic wire. Biocompatible CaO-P2O5-SiO2-Al2O3 (CPSA) glass fibers of 8-20 microm in diameter were oriented unidirectionally in the longitudinal direction in PMMA matrix. The mechanical properties were investigated by 3-point flexural test. The FRP wire showed sufficient strength and a very good elastic recovery after deformation. Young's modulus and the flexural load at deflection 1 mm were nearly independent of the fiber diameter and linearly increased with the fiber fraction. The dependence on fiber fraction obeys well the rule of mixture. This FRP wire could cover the range of strength corresponding to the conventional metal orthodontic wires from Ni-Ti used in the initial stage of orthodontic treatments to Co-Cr used in the final stage by changing the volume ratio of glass fibers with the same external diameter. The estheticity in external appearance was excellent. Thus the new FRP wire can satisfy both mechanical properties necessary for an orthodontic wire and enough estheticity, which was not possible for the conventional metal wire.
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Large-scale Synthesis of β-SiC Nanochains and Their Raman/Photoluminescence Properties.
Meng, Alan; Zhang, Meng; Gao, Weidong; Sun, Shibin; Li, Zhenjiang
2011-12-01
Although the SiC/SiO2 nanochain heterojunction has been synthesized, the chained homogeneous nanostructure of SiC has not been reported before. Herein, the novel β-SiC nanochains are synthesized assisted by the AAO template. The characterized results demonstrate that the nanostructures are constructed by spheres of 25-30 nm and conjoint wires of 15-20 nm in diameters. Raman and photoluminescence measurements are used to explore the unique optical properties. A speed-alternating vapor-solid (SA-VS) growth mechanism is proposed to interpret the formation of this typical nanochains. The achieved nanochains enrich the species of one-dimensional (1D) nanostructures and may hold great potential applications in nanotechnology.
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Er 3+ Doping conditions of planar porous silicon waveguides
NASA Astrophysics Data System (ADS)
Najar, A.; Lorrain, N.; Ajlani, H.; Charrier, J.; Oueslati, M.; Haji, L.
2009-11-01
EDX and infrared photoluminescence (IR PL) analyses performed on erbium-doped porous silicon waveguides (PSWG) were studied using different doping conditions. Both parameters of the cathodisation electrochemical method used for Er incorporation and parameters of thermal treatments required for Er optical activation were taken into consideration. Firstly, by varying the current density and the time of cathodisation, we have shown that a current density of 0.1 mA/cm 2 for 10 min allows homogeneous Er doping to be achieved throughout the depth of the guiding layer. Then, the PL intensity at 1.53 μm was studied as a function of the oxidation time at 900 °C and Er diffusion temperature for 60 min. Increasing the oxidation time up to 1 h allows PL to be enhanced due to active Si-O-Er complex formation whereas an oxidation time of 2 h induces a decrease in PL because of Er segregation. Moreover, an increase in the diffusion temperature induces an optimal distribution of optically active Si-Er-O complexes inside the crystallites. When the temperature is too high, a PSWG densification and Er segregation occurs inducing a decrease in PL due to energy transfer phenomena.
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AIN-Based Packaging for SiC High-Temperature Electronics
NASA Technical Reports Server (NTRS)
Savrun, Ender
2004-01-01
Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.
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Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits.
Liu, Liu; Ding, Yunhong; Yvind, Kresten; Hvam, Jørn M
2011-06-20
A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6 dB and an extinction ratio of 12 dB have been obtained experimentally in the whole C-band.
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NASA Astrophysics Data System (ADS)
Samukawa, S.; Noda, Shuichi; Higo, Akio; Yasuda, Manabu; Wada, Kazumi
2016-11-01
We have developed an innovated fabrication technology of Si, GaAs, and Ge nano-structures, i.e., we called defect-free neutral beam etching. The technology has been successfully applied to prototype the quantum nano-disks and nano-wires with ferritin based bio-templates. SEM observation verifies that the designed structures are prototyped. Photoluminescence measurements demonstrates high optical quality of nano-structures based on the technology.
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NASA Astrophysics Data System (ADS)
Pakhanov, N. A.; Pchelyakov, O. P.; Yakimov, A. I.; Voitsekhovskii, A. V.
2017-03-01
This paper demontstrates the possibility of developing a high-voltage waveguide photodetector comprised of Schottky diodes and based on a Au/Ge — Si structure with Ge quantum dots pseudomorphic to a silicon matrix, which ensures an increase in the external quantum yield and open-circuit voltage. It is shown on this photodetector that there is a great increase and broadening in sensitivity up to λ = 2.1 μm, which coincides with the main radiation range of a black (gray) body at the emitter temperatures from 1200 to 1700 °C, practically used in thermophotovoltaic converters. This state of the ensemble of Ge quantum dots by means of molecular beam epitaxy can be obtained only under the condition of low growth temperature (250-300 °C). It is established that, below the Si absorption edge, photoresponse on the photodetectors under consideration is determined by two main mechanisms: absorption on the ensemble of Ge quantum dots and Fowler emission. It is shown by the analysis of the Raman scattering spectra on the optical photons of Ge-Si structures that the quantum efficiency of photodetectors based on them in the first case is due to the degree of nonuniform stress relaxation in the array of Ge quantum dots. The photoresponse directly associated with the Ge quantum dots is manifested on Schottky diodes with a superthin intermediate oxide layer SiO2, which eliminates the second mechanism. In further development, the proposed photodetector architecture with pseudomorphic Ge quantum dots can be used both for portable thermophotovoltaic converters and fiber-optic data transmission systems at wavelengths corresponding to basic telecommunication standards (λ = 0.85, 1.3 and 1.55, 1.3, and 1.55 μm) on the basis of silicon technologies.
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Waveguide silicon nitride grating coupler
NASA Astrophysics Data System (ADS)
Litvik, Jan; Dolnak, Ivan; Dado, Milan
2016-12-01
Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.
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NASA Astrophysics Data System (ADS)
Gu, Zhichen; Inoue, Daisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa
2018-02-01
A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 µm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10-9 is obtained at data rates of 20 and 10 Gbps with input powers of -10 and -13 dBm, respectively.
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NASA Technical Reports Server (NTRS)
Adams, Michael J. (Editor)
1987-01-01
The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.
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Guo, Jingshu; Wu, Zhiwei; Zhao, Yanli
2017-05-01
We investigate the light absorption enhancement in waveguide Schottky photodetector integrated with ultrathin metal/silicide stripe, which can provide high internal quantum efficiency. By using aab0-quasi-TE hybrid modes for the first time, a high absorptance of 95.6% is achieved in 5 nm thick Au stripe with area of only 0.14 μm2, without using resonance structure. In theory, the responsivity, dark current, and 3dB bandwidth of the corresponding device are 0.146 A/W, 8.03 nA, and 88 GHz, respectively. For most silicides, the quasi-TM mode should be used in this device, and an optimized PtSi device has a responsivity of 0.71 A/W and a dark current of 35.9 μA.
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Wireless remote liquid level detector and indicator for well testing
Fasching, George E.; Evans, Donald M.; Ernest, John H.
1985-01-01
An acoustic system is provided for measuring the fluid level in oil, gas or water wells under pressure conditions that does not require an electrical link to the surface for level detection. A battery powered sound transmitter is integrated with a liquid sensor in the form of a conductivity probe, enclosed in a sealed housing which is lowered into a well by means of a wire line reel assembly. The sound transmitter generates an intense identifiable acoustic emission when the sensor contacts liquid in the well. The acoustic emissions propagate up the well which functions as a waveguide and are detected by an acoustic transducer. The output signal from the transducer is filtered to provide noise rejection outside of the acoustic signal spectrum. The filtered signal is used to indicate to an operator the liquid level in the well has been reached and the depth is read from a footage counter coupled with the wire line reel assembly at the instant the sound signal is received.
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Fiber optics for propulsion control systems
NASA Technical Reports Server (NTRS)
Baumbick, R. J.
1985-01-01
In aircraft systems with digital controls, fiberoptics has advantages over wire systems because of its inherent immunity to electromagnetic noise (EMI) and electromagnetic pulses (EMP). It also offers a weight benefit when metallic conductors are replaced by optical fibers. To take full advantage of the benefits of optical waveguides, passive optical sensors are also being developed to eliminate the need for electrical power to the sensor. Fiberoptics may also be used for controlling actuators on engine and airframe. In this application, the optical fibers, connectors, etc. will be subjected to high temperature and vibrations. This paper discussed the use of fiberoptics in aircraft propulsion systems together with the optical sensors and optically controlled actuators being developed to take full advantage of the benefits which fiberoptics offers. The requirements for sensors and actuators in advanced propulsion systems are identified. The benefits of using fiberoptics in place of conventional wire systems are discussed as well as the environmental conditions under which the optical components must operate.
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Fiberoptics for propulsion control system
NASA Technical Reports Server (NTRS)
Baumbick, R. J.
1984-01-01
In aircraft systems with digital controls, fiberoptics has advantages over wire systems because of its inherent immunity to electromagnetic noise (EMI) and electromagnetic pulses (EMP). It also offers a weight benefit when metallic conductors are replaced by optical fibers. To take full advantage of the benefits of optical waveguides, passive optical sensors are also being developed to eliminate the need for electrical power to the sensor. Fiberoptics may also be used for controlling actuators on engine and airframe. In this application, the optical fibers, connectors, etc. will be subjected to high temperature and vibrations. This paper discussed the use of fiberoptics in aircraft propulsion systems together with the optical sensors and optically controlled actuators being developed to take full advantage of the benefits which fiberoptics offers. The requirements for sensors and actuators in advanced propulsion systems are identified. The benefits of using fiberoptics in place of conventional wire systems are discussed as well as the environmental conditions under which the optical components must operate.
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NASA Astrophysics Data System (ADS)
Granitzer, P.; Rumpf, K.; Hofmayer, M.; Krenn, H.; Pölt, P.; Reichmann, A.; Hofer, F.
2007-04-01
A matrix of mesoporous silicon offering an array of quasi 1-dimensional oriented pores of high aspect ratio perpendicular to the sample surface has been produced. This porous silicon (PS) skeleton is filled with Ni in a further process-step to achieve ferromagnetic metallic nanostructures within the channels. This produced silicon based nanocomposite is compatible with state-of-the-art silicon technology. Beside the vertical magnetic surface anisotropy of this Ni-filled composite the nearly monodisperse distribution of pore diameters and its regular arrangement in a quasi 2-dimensional lattice provides novel magnetic phenomena like a depression of the magnetization curve at magnetic fields beyond 2T, which can be interpreted as a field induced antiferromagnetic exchange interaction between Ni-wires which is strongly influenced by magnetostrictive stresses at the Ni/Si-interface. 2007 American Institute of Physics
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NASA Astrophysics Data System (ADS)
Niikura, Chisato; Masuda, Atsushi; Matsumura, Hideki
1999-07-01
Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications.
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A comparison study of exploding a Cu wire in air, water, and solid powders
NASA Astrophysics Data System (ADS)
Han, Ruoyu; Wu, Jiawei; Ding, Weidong; Zhou, Haibin; Qiu, Aici; Wang, Yanan
2017-11-01
In this paper, an experimental study on exploding a copper wire in air, water, incombustible powders, and energetic materials is performed. We examined the effects of the surrounding media on the explosion process and its related phenomena. Experiments were first carried out with copper wire explosions driven by microsecond timescale pulsed currents in air, water, and the half-half case. Then, the copper wires were exploded in air, water, SiO2 powders, quartz sand, NaCl powders, and energetic-material cylinders, respectively. Our experimental results indicated that the explosion process was significantly influenced by the surrounding media, resulting in noticeable differences in energy deposition, optical emission, and shock waves. In particular, incombustible powders could throttle the current flow completely when a fine wire was adopted. We also found that an air or incombustible-powder layer could drastically attenuate the shock wave generated by a wire explosion. As for energetic-material loads, obvious discrepancies were found in voltage/current waveforms from vaporization when compared with a wire explosion in air/water, which meant the metal vapor/liquid drops play a significant role in the ignition process.
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Group-IV midinfrared plasmonics
NASA Astrophysics Data System (ADS)
Biagioni, Paolo; Frigerio, Jacopo; Samarelli, Antonio; Gallacher, Kevin; Baldassarre, Leonetta; Sakat, Emilie; Calandrini, Eugenio; Millar, Ross W.; Giliberti, Valeria; Isella, Giovanni; Paul, Douglas J.; Ortolani, Michele
2015-01-01
The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Shakthivel, Dhayalan; Rathkanthiwar, Shashwat; Raghavan, Srinivasan, E-mail: sraghavan@cense.iisc.ernet.in
2015-04-28
Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120–480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important partmore » of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet.« less
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NASA Astrophysics Data System (ADS)
Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei
2018-04-01
We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.
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NASA Technical Reports Server (NTRS)
Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.
2018-01-01
Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.
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Controlled motion of domain walls in submicron amorphous wires
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ţibu, Mihai; Lostun, Mihaela; Rotărescu, Cristian
Results on the control of the domain wall displacement in cylindrical Fe{sub 77.5}Si{sub 7.5}B{sub 15} amorphous glass-coated submicron wires prepared by rapid quenching from the melt are reported. The control methods have relied on conical notches with various depths, up to a few tens of nm, made in the glass coating and in the metallic nucleus using a focused ion beam (FIB) system, and on the use of small nucleation coils at one of the sample ends in order to apply magnetic field pulses aimed to enhance the nucleation of reverse domains. The notch-based method is used for the firstmore » time in the case of cylindrical ultrathin wires. The results show that the most efficient technique of controlling the domain wall motion in this type of samples is the simultaneous use of notches and nucleation coils. Their effect depends on wire diameter, notch depth, its position on the wire length, and characteristics of the applied pulse.« less
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Anderson, A. A.; Ivanov, V. V.; Astanovitskiy, A. L.
2015-11-15
Star and cylindrical wire arrays were studied using laser probing and X-ray radiography at the 1-MA Zebra pulse power generator at the University of Nevada, Reno. The Leopard laser provided backlighting, producing a laser plasma from a Si target which emitted an X-ray probing pulse at the wavelength of 6.65 Å. A spherically bent quartz crystal imaged the backlit wires onto X-ray film. Laser probing diagnostics at the wavelength of 266 nm included a 3-channel polarimeter for Faraday rotation diagnostic and two-frame laser interferometry with two shearing interferometers to study the evolution of the plasma electron density at the ablation and implosionmore » stages. Dynamics of the plasma density profile in Al wire arrays at the ablation stage were directly studied with interferometry, and expansion of wire cores was measured with X-ray radiography. The magnetic field in the imploding plasma was measured with the Faraday rotation diagnostic, and current was reconstructed.« less
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Nanoantenna couplers for metal-insulator-metal waveguide interconnects
NASA Astrophysics Data System (ADS)
Onbasli, M. Cengiz; Okyay, Ali K.
2010-08-01
State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.
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Push-broom imaging spectrometer based on planar lightwave circuit MZI array
NASA Astrophysics Data System (ADS)
Yang, Minyue; Li, Mingyu; He, Jian-Jun
2017-05-01
We propose a large aperture static imaging spectrometer (LASIS) based on planar lightwave circuit (PLC) MZI array. The imaging spectrometer works in the push-broom mode with the spectrum performed by interferometry. While the satellite/aircraft is orbiting, the same source, seen from the satellite/aircraft, moves across the aperture and enters different MZIs, while adjacent sources enter adjacent MZIs at the same time. The on-chip spectrometer consists of 256 input mode converters, followed by 256 MZIs with linearly increasing optical path delays and a detector array. Multiple chips are stick together to form the 2D image surface and receive light from the imaging lens. Two MZI arrays are proposed, one works in wavelength ranging from 500nm to 900nm with SiON(refractive index 1.6) waveguides and another ranging from 1100nm to 1700nm with SOI platform. To meet the requirements of imaging spectrometer applications, we choose large cross-section ridge waveguide to achieve polarization insensitive, maintain single mode propagation in broad spectrum and increase production tolerance. The SiON on-chip spectrometer has a spectral resolution of 80cm-1 with a footprint of 17×15mm2 and the SOI based on-chip spectrometer has a resolution of 38cm-1 with a size of 22×19mm2. The spectral and space resolution of the imaging spectrometer can be further improved by simply adding more MZIs. The on-chip waveguide MZI array based Fourier transform imaging spectrometer can provide a highly compact solution for remote sensing on unmanned aerial vehicles or satellites with advantages of small size, light weight, no moving parts and large input aperture.
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InP on SOI devices for optical communication and optical network on chip
NASA Astrophysics Data System (ADS)
Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.
2011-01-01
For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.
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Optical design of GaN nanowire arrays for photocatalytic applications
NASA Astrophysics Data System (ADS)
Winnerl, Julia; Hudeczek, Richard; Stutzmann, Martin
2018-05-01
GaN nanowire (NW) arrays are interesting candidates for photocatalytic applications due to their high surface-to-volume ratio and their waveguide character. The integration of GaN NW arrays on GaN-based light emitting diodes (LEDs), serving as a platform for electrically driven NW-based photocatalytic devices, enables an efficient coupling of the light from the planar LED to the GaN NWs. Here, we present a numerical study of the influence of the NW geometries, i.e., the NW diameter, length, and period, and the illumination wavelength on the transmission of GaN NW arrays on transparent substrates. A detailed numerical analysis reveals that the transmission characteristics for large periods are determined by the waveguide character of the single NW, whereas for dense GaN NW arrays inter-wire coupling and diffraction effects originating from the periodic arrangement of the GaN NWs dominate the transmission. The numerically simulated results are confirmed by experimental transmission measurements. We also investigate the influence of a dielectric NW shell and of the surrounding medium on the transmission characteristics of a GaN NW array.
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Exact comprehensive equations for the photon management properties of silicon nanowire
Li, Yingfeng; Li, Meicheng; Li, Ruike; Fu, Pengfei; Wang, Tai; Luo, Younan; Mbengue, Joseph Michel; Trevor, Mwenya
2016-01-01
Unique photon management (PM) properties of silicon nanowire (SiNW) make it an attractive building block for a host of nanowire photonic devices including photodetectors, chemical and gas sensors, waveguides, optical switches, solar cells, and lasers. However, the lack of efficient equations for the quantitative estimation of the SiNW’s PM properties limits the rational design of such devices. Herein, we establish comprehensive equations to evaluate several important performance features for the PM properties of SiNW, based on theoretical simulations. Firstly, the relationships between the resonant wavelengths (RW), where SiNW can harvest light most effectively, and the size of SiNW are formulized. Then, equations for the light-harvesting efficiency at RW, which determines the single-frequency performance limit of SiNW-based photonic devices, are established. Finally, equations for the light-harvesting efficiency of SiNW in full-spectrum, which are of great significance in photovoltaics, are established. Furthermore, using these equations, we have derived four extra formulas to estimate the optimal size of SiNW in light-harvesting. These equations can reproduce majority of the reported experimental and theoretical results with only ~5% error deviations. Our study fills up a gap in quantitatively predicting the SiNW’s PM properties, which will contribute significantly to its practical applications. PMID:27103087
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Microstructural Characterization of Melt Extracted High-Nb-Containing TiAl-Based Fiber
Zhang, Shuzhi; Zhang, Shuling; Chen, Yanfei; Han, Jianchao; Zhang, Changjiang; Wang, Xiaopeng; Chen, Yuyong
2017-01-01
The microstructure of melt extracted Ti-44Al-8Nb-0.2W-0.2B-1.5Si fiber were investigated. When the rotation speed increased from 2000 to 2600 r/min, the appearance of the wire was uniform with no Rayleigh-wave default. The structure was mainly composed of fine α2 (α) phase dendritic crystal and a second phase between dendrite arms and grain boundaries. The precipitated second phases were confirmed to be Ti5Si3 from the eutectic reaction L→Ti5Si3 + α and TiB. As the lower content of Si and higher cooling rate, a divorced eutectic microstructure was obtained. Segregation of Ti, Nb, B, Si, and Al occurred during rapid solidification. PMID:28772555
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Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions
Parameshwaran, Vijay; Clemens, Bruce
2016-08-17
With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp 2 0/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications.more » When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc + redox pair, photocurrents of 18, 110, and 482 nA/cm 2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.« less
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A review of various nozzle range of wire arc spray on FeCrBMnSi metal coating
NASA Astrophysics Data System (ADS)
Purwaningsih, Hariyati; Rochiem, Rochman; Suchaimi, Muhammad; Jatimurti, Wikan; Wibisono, Alvian Toto; Kurniawan, Budi Agung
2018-04-01
Low Temperature Hot Corrosion (LTHC) is type of hot corrosion which occurred on 700-800°C and usually on turbine blades. So, as a result the material of turbine blades is crack and degredation of rotation efficiency. Hot corrosion protection with the use of barrier that separate substrate and environment is one of using metal surface coating, wire arc spray method. This study has a purpose to analyze the effect of nozzle distance and gas pressure on FeCrBMnSi coating process using wire arc spray method on thermal resistance. The parameter of nozzle distance and gas pressure are used, resulted the best parameter on distance 400 mm and gas pressure 3 bar which has the bond strength of 12,58 MPa with porosity percentage of 5,93% and roughness values of 16,36 µm. While the examination of thermal cycle which by heating and cooling continuously, on the coating surface is formed oxide compound (Fe3O4) which cause formed crack propagation and delamination. Beside that hardness of coating surface is increase which caused by precipitate boride (Fe9B)0,2
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NASA Astrophysics Data System (ADS)
Kim, Sun-Woo; Kim, Hyun-Jung; Ming, Fangfei; Jia, Yu; Zeng, Changgan; Cho, Jun-Hyung; Zhang, Zhenyu
2015-05-01
It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction or expansion. Here we demonstrate the equivalence of ES and MS in structural stabilization, using In wires on Si(111) as a prototypical example. Our systematic density-functional theory calculations reveal that, first, for the same degrees of carrier doping into the In wires, the ES of the high-temperature metallic 4 ×1 structure is only slightly compressive, while that of the low-temperature insulating 8 ×2 structure is much larger and highly anisotropic. As a consequence, the intrinsic energy difference between the two phases is significantly reduced towards electronically phase-separated ground states. Our calculations further demonstrate quantitatively that such intriguing phase tunabilities can be achieved equivalently via lattice-contraction induced MS in the absence of charge doping. We also validate the equivalence through our detailed scanning tunneling microscopy experiments. The present findings have important implications for understanding the underlying driving forces involved in various phase transitions of simple and complex systems alike.
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Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions
DOE Office of Scientific and Technical Information (OSTI.GOV)
Parameshwaran, Vijay; Clemens, Bruce
With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp 2 0/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications.more » When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc + redox pair, photocurrents of 18, 110, and 482 nA/cm 2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.« less
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Magnetic decoupling of the linac in a low field biplanar linac-MR system.
St Aubin, J; Steciw, S; Fallone, B G
2010-09-01
The integration of a low field biplanar magnetic resonance (MR) imager and linear accelerator (linac) causes magnetic interference at the linac due to the MR fringe fields. In order to eliminate this interference, passive and active magnetic shielding designs are investigated. The optimized design of passive magnetic shielding was performed using the finite element method. The design was required to achieve no greater than a 20% electron beam loss within the linac waveguide and electron gun, no greater than 0.06 T at the multileaf collimator (MLC) motors, and generate a distortion of the main MR imaging volume of no greater than 300 ppm. Through the superposition of the analytical solution for a single current carrying wire loop, active shielding designs in the form of three and four sets of coil pairs surrounding the linac waveguide and electron gun were also investigated. The optimized current and coil center locations that yielded the best cancellation of the MR fringe fields at the linac were determined using sequential quadratic programming. Optimized passive shielding in the form of two steel cylinders was designed to meet the required constraints. When shielding the MLC motors along with the waveguide and electron gun, the thickness of the cylinders was less than 1 mm. If magnetically insensitive MLC motors are used, no MLC shielding would be required and the waveguide shield (shielding the waveguide and electron gun) became 1.58 mm thick. In addition, the optimized current and coil spacing for active shielding was determined for both three and four coil pair configurations. The results of the active shielding optimization produced no beam loss within the waveguide and electron gun and a maximum MR field distortion of 91 ppm over a 30 cm diameter spherical volume. Very simple passive and active shielding designs have been shown to magnetically decouple the linac from the MR imager in a low field biplanar linac-MR system. The MLC passive shielding produced the largest distortion of the MR field over the imaging volume. With the use of magnetically insensitive motors, the MR field distortion drops substantially since no MLC shield is required. The active shielding designs yielded no electron beam loss within the linac.
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Advanced electron microscopy methods for the analysis of MgB2 superconductor
NASA Astrophysics Data System (ADS)
Birajdar, B.; Peranio, N.; Eibl, O.
2008-02-01
Advanced electron microscopy methods used for the analysis of superconducting MgB2 wires and tapes are described. The wires and tapes were prepared by the powder in tube method using different processing technologies and thoroughly characterised for their superconducting properties within the HIPERMAG project. Microstructure analysis on μm to nm length scales is necessary to understand the superconducting properties of MgB2. For the MgB2 phase analysis on μm scale an analytical SEM, and for the analysis on nm scale a energy-filtered STEM is used. Both the microscopes were equipped with EDX detector and field emission gun. Electron microscopy and spectroscopy of MgB2 is challenging because of the boron analysis, carbon and oxygen contamination, and the presence of large number of secondary phases. Advanced electron microscopy involves, combined SEM, EPMA and TEM analysis with artefact free sample preparation, elemental mapping and chemical quantification of point spectra. Details of the acquisition conditions and achieved accuracy are presented. Ex-situ wires show oxygen-free MgB2 colonies (a colony is a dense arrangement of several MgB2 grains) embedded in a porous and oxygen-rich matrix, introducing structural granularity. In comparison, in-situ wires are generally more dense, but show inhibited MgB2 phase formation with significantly higher fraction of B-rich secondary phases. SiC additives in the in-situ wires forms Mg2Si secondary phases. The advanced electron microscopy has been used to extract the microstructure parameters like colony size, B-rich secondary phase fraction, O mole fraction and MgB2 grain size, and establish a microstructure-critical current density model [1]. In summary, conventional secondary electron imaging in SEM and diffraction contrast imaging in the TEM are by far not sufficient and advanced electron microscopy methods are essential for the analysis of superconducting MgB2 wires and tapes.
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Crystal structure of laser-induced subsurface modifications in Si
NASA Astrophysics Data System (ADS)
Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in't Veld, A. J.
2015-08-01
Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this work, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. In addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si -iii/Si -xii occur as a result of the laser irradiation.
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Spin wave propagation detected over 100 μm in half-metallic Heusler alloy Co2MnSi
NASA Astrophysics Data System (ADS)
Stückler, Tobias; Liu, Chuanpu; Yu, Haiming; Heimbach, Florian; Chen, Jilei; Hu, Junfeng; Tu, Sa; Alam, Md. Shah; Zhang, Jianyu; Zhang, Youguang; Farrell, Ian L.; Emeny, Chrissy; Granville, Simon; Liao, Zhi-Min; Yu, Dapeng; Zhao, Weisheng
2018-03-01
The field of magnon spintronics offers a charge current free way of information transportation by using spin waves (SWs). Compared to forward volume spin waves for example, Damon-Eshbach (DE) SWs need a relatively weak external magnetic field which is suitable for small spintronic devices. In this work we study DE SWs in Co2MnSi, a half-metallic Heusler alloy with significant potential for magnonics. Thin films have been produced by pulsed laser deposition. Integrated coplanar waveguide (CPW) antennas with different distances between emitter and detection antenna have been prepared on a Co2MnSi film. We used a vector network analyzer to measure spin wave reflection and transmission. We observe spin wave propagation up to 100 μm, a new record for half-metallic Heusler thin films.
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Mid-Atomic-Number Cylindrical Wire Array Precursor Plasma Studies on Zebra
Stafford, A; Safronova, A. S.; Kantsyrev, V. L.; ...
2014-12-30
The precursor plasmas from low wire number cylindrical wire arrays (CWAs) were previously shown to radiate at temperatures >300 eV for Ni-60 (94% Cu and 6% Ni) wires in experiments on the 1-MA Zebra generator. Continued research into precursor plasmas has studied additional midatomic-number materials including Cu and Alumel (95% Ni, 2% Al, 2% Mn, and 1% Si) to determine if the >300 eV temperatures are common for midatomic-number materials. Additionally, current scaling effects were observed by performing CWA precursor experiments at an increased current of 1.5 MA using a load current multiplier. Our results show an increase in amore » linear radiation yield of ~50% (16 versus 10 kJ/cm) for the experiments at increased current. However, plasma conditions inferred through the modeling of X-ray time-gated spectra are very similar for the precursor plasma in both current conditions.« less
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Infrared wire-grid polarizer with sol-gel zirconia grating
NASA Astrophysics Data System (ADS)
Yamada, Itsunari; Ishihara, Yoshiro
2017-05-01
The infrared wire-grid polarizer consisting of an Al grating, Si, and sol-gel derived zirconia grating film was fabricated by soft imprint process and Al shadow coating processes. A silicone mold was used because of its low surface energy, flexibility, and capability of transferring submicrosized patterns. As a result, the Al grating with a pitch of 400 nm and a depth of 100 nm was obtained on the zirconia grating film. The fabricated polarizer exhibited a polarization function with the TM transmittance greater than that of the Si substrate in the specific wavelength range of 3.6-8.5 μm, because the zirconia film acted as an antireflection film. The maximum value was 63% at a wavelength of 5.2 μm. This increment of the TM transmission spectrum results in interference within the zirconia film. Also, the extinction ratio exceeded almost 20 dB in the 3-8.8 μm wavelength range.
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Method of forming a hardened surface on a substrate
Branagan, Daniel J.
2010-08-31
The invention includes a method of producing a hard metallic material by forming a mixture containing at least 55% iron and at least one of B, C, Si and P. The mixture is formed into an alloy and cooled to form a metallic material having a hardness of greater than about 9.2 GPa. The invention includes a method of forming a wire by combining a metal strip and a powder. The metal strip and the powder are rolled to form a wire containing at least 55% iron and from two to seven additional elements including at least one of C, Si and B. The invention also includes a method of forming a hardened surface on a substrate by processing a solid mass to form a powder, applying the powder to a surface to form a layer containing metallic glass, and converting the glass to a crystalline material having a nanocrystalline grain size.
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Tanizawa, Ken; Suzuki, Keijiro; Ikeda, Kazuhiro; Namiki, Shu; Kawashima, Hitoshi
2017-05-15
We demonstrate a fully integrated polarization-diversity 8 × 8 thermo-optic Si-wire switch that uses only a single path-independent insertion loss (PILOSS) switch matrix. All input/output ports of the PILOSS switch matrix are uniquely assigned for polarization diversity without switch duplication. To integrate polarization splitter-rotators on a chip, we propose a compact path-length-equalized polarization-diversity switch configuration. Polarization-dependent loss (PDL) and differential group delay (DGD) are minimized. The 8 × 8 switch is fabricated by the CMOS-compatible fabrication process on 300-mm diameter wafer and additional etching of upper cladding after dicing. The chip size is 7 × 10.5 mm 2 . A PDL of 2 dB and a DGD of 1.5 ps are achieved. The crosstalk in the worst-case scenario is -20 dB in the full C-band.
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Power-Amplifier Module for 145 to 165 GHz
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Peralta, Alejandro
2007-01-01
A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.
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Fabrication of silicon nanowires based on-chip micro-supercapacitor
NASA Astrophysics Data System (ADS)
Soam, Ankur; Arya, Nitin; Singh, Aniruddh; Dusane, Rajiv
2017-06-01
An on-chip micro-supercapacitor (μ-SC) based on Silicon nanowires (SiNWs) has been developed by Hot-wire chemical vapor process. First, finger patterned electrodes of Al were made on a silicon nitride coated Si wafer and SiNWs were then grown selectively on the Al electrodes. μ-SC performance has been tested in an ionic electrolyte and a capacitance of 13 μF/cm2 has been obtained by the μ-SC. The resulted μ-SC can be exploited to store the harvesting energy in micro-electro-mechanical-systems and coupled with battery for peak power leveling. Low temperature growth of SiNWs at 350 °C makes it suitable for prospective flexible electronics applications.
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Propagation and switching of light in rectangular waveguiding structures
NASA Astrophysics Data System (ADS)
Sala, Anca L.
1998-10-01
In this dissertation, we investigate the conditions for the propagation and processing of temporal optical solitons in the rectangular geometry waveguides which are expected to play an important role as processing elements in optical communication systems. It is anticipated that the optical signals carrying information through optical fibers will be in the form of temporal soliton pulses, which can propagate undistorted for long distances under the condition that the dispersion is balanced by a nonlinearity in the optical fiber. An important parameter in the equation that governs temporal soliton propagation in a waveguide is the second derivative of the propagation vector with respect to the angular frequency, /omega, denoted by β/prime'. We evaluate β/prime' for rectangular waveguides using a channel model of the waveguide, which takes into account the two transverse dimensions of the rectangular channel. Significant differences are found in the values of β/prime' obtained from our model and those obtained from the more traditional, one dimensional slab model. A major additional effort in the present thesis relates to the development of a theory of temporal soliton switching in a planar geometry nonlinear directional coupler. The theory is formulated in terms of the supermodes of the total structure, and again accounts for the two transverse dimensions of the channels. To accurately determine the coupling length and switching power of the nonlinear coupler, we apply corrections to the propagation constants of the supermodes that account for the non-zero electromagnetic fields in the outer corner regions of the waveguide channels. It is shown for the case of a SiO2 based nonlinear directional coupler operating at the central wavelength of 1.55 μm, that these corrections have a significant effect on both the coupling length and the switching power. Finally, we develop the conditions under which single mode rectangular waveguides can have zero dispersion at the optical communications wavelengths 1.31 μm or 1.55 μm, and discuss the end-to-end coupling of rectangular waveguides to the standard optical fibers used in optical communications. Our results are expected to serve as a guide for the design of planar geometry based processing elements in a variety of optical communications devices.
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Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.
Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B
2015-08-10
We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.
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NASA Astrophysics Data System (ADS)
Liu, Qifa; Wang, Wei
2018-01-01
Gallium Nitride (GaN) free-standing planar photonic device at telecommunication wavelength based on GaN-on-silicon platform was presented. The free-standing structure was realized by particular double-side fabrication process, which combining GaN front patterning, Si substrate back releasing and GaN slab etching. The actual device parameters were identified via the physical characterizations employing scanning electron microscope (SEM), atomic force microscope (AFM) and reflectance spectra testing. High coupling efficiency and good light confinement properties of the gratings and rib waveguide at telecommunication wavelength range were verified by finite element method (FEM) simulation. This work illustrates the potential of new GaN photonic structure which will enable new functions for planar photonics in communication and sensing applications, and is favorable for the realization of integrated optical circuit.
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Hybrid organic-inorganic sol-gel materials and components for integrated optoelectronics
NASA Astrophysics Data System (ADS)
Lu, Dong
On the technical platform of hybrid organic-inorganic sol-gel, the integrated optoelectronics in the forms of heterogeneous integration between the hybrid sol-gel waveguide and the high refractive index semiconductors and the nonlinear functional doping of disperse red chromophore into hybrid sol-gel is developed. The structure of hybrid sol-gel waveguide on high index semiconductor substrate is designed with BPM-CAD software. A hybrid sol-gel based on MAPTMS and TEOS suitable for lower cladding for the waveguide is developed. The multi-layer hybrid sol-gel waveguide with good mode confinement and low polarization dependence is fabricated on Si and InP. As proof of concept, a 1 x 12 beam splitter based on multimode interference is fabricated on silicon substrate. The device shows excess loss below 0.65 dB and imbalance below 0.28 dB for both TE and TM polarization. A nonlinear active hybrid sol-gel doped with disperse red 13 has been developed by simple co-solvent method. It permits high loading concentration and has low optical loss at 1550 nm. The second-order nonlinear property of the active sol-gel is induced with corona poling and studied with second harmonic generation. A 3-fold of enhancement in the poling efficiency is achieved by blue light assisted corona poling. The chromophore alignment stability is improved by reducing the free volume of the formed inorganic network from the sol-gel condensation reaction. An active sol-gel channel waveguide has been fabricated using active and passive hybrid sol-gel materials by only photopatterning and spin-coating. An amplitude modulator based on the active sol-gel containing 30 wt.% of DR13 shows an electro-optic coefficient of 14 pm/V at 1550 nm and stable operation within the observation time of 24 days.
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NASA Astrophysics Data System (ADS)
Degioanni, S.; Jurdyc, A. M.; Cheap, A.; Champagnon, B.; Bessueille, F.; Coulm, J.; Bois, L.; Vouagner, D.
2015-10-01
Two kinds of gold substrates are used to produce surface-enhanced Raman scattering (SERS) of amorphous silica obtained via the sol-gel route using tetraethoxysilane Si(OC2H5)4 (TEOS) solution. The first substrate consists of a gold nanometric film elaborated on a glass slide by sputter deposition, controlling the desired gold thickness and sputtering current intensity. The second substrate consists of an array of micrometer-sized gold inverted pyramidal pits able to confine surface plasmon (SP) enhancing electric field, which results in a distribution of electromagnetic energy inside the cavities. These substrates are optically characterized to observe SPR with, respectively, extinction and reflectance spectrometries. Once coated with thin layers of amorphous silica (SiO2) gel, these samples show Raman amplification of amorphous SiO2 bands. This enhancement can occur in SERS sensors using amorphous SiO2 gel as shells, spacers, protective coatings, or waveguides, and represents particularly a potential interest in the field of Raman distributed sensors, which use the amorphous SiO2 core of optical fibers as a transducer to make temperature measurements.
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NASA Astrophysics Data System (ADS)
Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon
2009-09-01
In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.
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Synthesis of SiO(x) powder using DC arc plasma.
Jung, Chan-Ok; Park, Dong-Wha
2013-02-01
SiO(x) was prepared by DC arc plasma and applied to the anode material of lithium ion batteries. A pellet of a mixture of Si and SiO2 was used as the raw material. The ratios of the silicon and silicon dioxide (SiO2) mixtures were varied by controlling the Si-SiO2 molar ratio (Si-SiO2 = 1-4). Hydrogen gas was used as the reduction atmosphere in the chamber. The prepared SiO(x) was collected on the chamber wall. The obtained SiO(x) was characterized by X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). XRD and TEM showed that the phase composition of the prepared particles was composed of amorphous SiO(x) and crystalline Si. The prepared SiO(x) showed wire and spherical morphology. XPS indicated the bonding state and 'x' value of the prepared SiO(x), which was close to one. The result of prepared SiO(x) is discussed from thermodynamic equilibrium calculations. The electrochemical behavior of the silicon monoxide anode was investigated.
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NASA Technical Reports Server (NTRS)
2011-01-01
Topics covered include: Amperometric Solid Electrolyte Oxygen Microsensors with Easy Batch Fabrication; Two-Axis Direct Fluid Shear Stress Sensor for Aerodynamic Applications; Target Assembly to Check Boresight Alignment of Active Sensors; Virtual Sensor Test Instrumentation; Evaluation of the Reflection Coefficient of Microstrip Elements for Reflectarray Antennas; Miniaturized Ka-Band Dual-Channel Radar; Continuous-Integration Laser Energy Lidar Monitor; Miniaturized Airborne Imaging Central Server System; Radiation-Tolerant, SpaceWire-Compatible Switching Fabric; Small Microprocessor for ASIC or FPGA Implementation; Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters; High-Voltage-Input Level Translator Using Standard CMOS; Monitoring Digital Closed-Loop Feedback Systems; MASCOT - MATLAB Stability and Control Toolbox; MIRO Continuum Calibration for Asteroid Mode; GOATS Image Projection Component; Coded Modulation in C and MATLAB; Low-Dead-Volume Inlet for Vacuum Chamber; Thermal Control Method for High-Current Wire Bundles by Injecting a Thermally Conductive Filler; Method for Selective Cleaning of Mold Release from Composite Honeycomb Surfaces; Infrared-Bolometer Arrays with Reflective Backshorts; Commercialization of LARC (trade mark) -SI Polyimide Technology; Novel Low-Density Ablators Containing Hyperbranched Poly(azomethine)s; Carbon Nanotubes on Titanium Substrates for Stray Light Suppression; Monolithic, High-Speed Fiber-Optic Switching Array for Lidar; Grid-Tied Photovoltaic Power System; Spectroelectrochemical Instrument Measures TOC; A Miniaturized Video System for Monitoring Drosophila Behavior; Hydrofocusing Bioreactor Produces Anti-Cancer Alkaloids; Creep Measurement Video Extensometer; Radius of Curvature Measurement of Large Optics Using Interferometry and Laser Tracker n-B-pi-p Superlattice Infrared Detector; Safe Onboard Guidance and Control Under Probabilistic Uncertainty; General Tool for Evaluating High-Contrast Coronagraphic Telescope Performance Error Budgets; Hidden Statistics of Schroedinger Equation; Optimal Padding for the Two-Dimensional Fast Fourier Transform; Spatial Query for Planetary Data; Higher Order Mode Coupling in Feed Waveguide of a Planar Slot Array Antenna; Evolutionary Computational Methods for Identifying Emergent Behavior in Autonomous Systems; Sampling Theorem in Terms of the Bandwidth and Sampling Interval; Meteoroid/Orbital Debris Shield Engineering Development Practice and Procedure; Self-Balancing, Optical-Center-Pivot, Fast-Steering Mirror; Wireless Orbiter Hang-Angle Inclinometer System; and Internal Electrostatic Discharge Monitor - IESDM.
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Study on Formation Mechanism of CaO-SiO2-Based Inclusions in Saw Wire Steel
NASA Astrophysics Data System (ADS)
Wang, Kun-Peng; Jiang, Min; Wang, Xin-Hua; Wang, Ying; Zhao, Hao-Qian; Cao, Zhan-Min
2017-12-01
Attempts were made to elucidate the formation mechanism of CaO-SiO2-based inclusions in saw wires by both laboratory experiments and industrial trials. The key point was to make clear the origin of CaO in such oxide inclusions. Probable origins of [Ca] in steel were first discussed, which can be taken into steel from the steel-slag reaction or ferrous alloy. As a result, slag-steel chemical reaction equilibrium was carefully evaluated at 1873 K (1600 °C) to classify the changes of dissolved aluminum ([Al]), total magnesium (Mg), and total calcium (Ca) in steel and the caused composition variations of inclusions. With the rise of slag basicity from 0.5 to 1.8, [Al] was remarkably increased from 0.00045 to 0.00139 mass pct, whereas Mg varied in the range of 0.00038 to 0.00048 mass pct. By contrast, Ca was constantly kept below 0.00003 mass pct. Accordingly, Al2O3 and MgO in inclusions witnessed obvious rises from 5 to 23 mass pct and from 2 to 8 mass pct, respectively. By contrast, inclusions were free of CaO when slag basicity was below 1.5. With slag basicity further increased to 1.8, CaO witnessed a negligible rise to only 1.0 mass pct on average. This phenomenon agreed well with thermodynamic calculations, which revealed that chemical reaction between steel and CaO in slag (for example, between [Si] and CaO) was weak to hardly supplying sufficient [Ca] to steel to increase CaO in inclusions. Ca contained in ferrous alloys as contaminations was not the cause of CaO-SiO2-based inclusions, either. The industrial trial results indicated that CaO-SiO2-based inclusions have been readily produced in short time just after BOF tapping. Also, a percentage of them changed slightly with the proceeding of refining. Based on the good agreement of laboratory, industrial, and thermodynamics calculations results, it can be reasonably concluded that CaO-SiO2-based inclusions in saw wire were exogenous particles from entrapped/emulsified top slag, but not products of slag-steel-inclusion chemical reactions.
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NASA Astrophysics Data System (ADS)
Lin, Yiding; Ma, Danhao; Lee, Kwang Hong; Michel, Jurgen; Tan, Chuan Seng
2018-02-01
A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.
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Cabanetos, Clément; Mahé, Hind; Blart, Errol; Pellegrin, Yann; Montembault, Véronique; Fontaine, Laurent; Adamietz, Frédéric; Rodriguez, Vincent; Bosc, Dominique; Odobel, Fabrice
2011-06-01
High-quality trails of ridge waveguides were successfully fabricated using a new cross-linkable polymer (PCC01) by UV photolithography followed by Reactive-Ion Etching (RIE) process. The cross-linking reaction of PCC01 is based on the copper-free Huisgen cyclo-addition between an azide and an acetylene group. The new cross-linkable polymer (PCC01) consists of a structural modification of the previously described materials (Scarpaci et al. Polym. Chem.2011, 2, 157), because the ethynyl group is functionalized by a methyl group instead of the TMS protecting group. This feature prevents the formation of silica (SiO(2)) generated by trimethylsilyl groups and which was stopping the engraving process before completion. Herein, we describe the synthesis, the NLO characterizations, and the fabrication of a high-quality ridge waveguide with PCC01. The new cross-linkable polymer PCC01 not only solves the problems encountered with our previously described polymers, but also presents an enhancement of the electro-optic stability, because d(33) coefficients up to 30 pm/V stable at 150 °C were recorded. © 2011 American Chemical Society
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Properties of arc-sprayed coatings from Fe-based cored wires for high-temperature applications
NASA Astrophysics Data System (ADS)
Korobov, Yu. S.; Nevezhin, S. V.; FiliÑpov, M. A.; Makarov, A. V.; Malygina, I. Yu.; Fantozzi, D.; Milanti, A.; Koivuluoto, H.; Vuoristo, P.
2017-12-01
Equipment of a thermal power plant is subjected to high temperature oxidation and wear. This raises operating costs through frequent repair of worn parts and high metal consumption. The paper proposes a possible solution to this problem through arc spraying of protective coatings. Cored wires of the Fe-Cr-C basic alloying system are used as a feedstock. Additional alloying by Al, B, Si, Ti and Y allows one to create wear- and heat-resistant coatings, which are an attractive substitute of more expensive Co- and Ni-based materials.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Feng, Jijun; Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology; Akimoto, Ryoichi, E-mail: r-akimoto@aist.go.jp
2015-10-19
Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 Vmore » are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.« less
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NASA Astrophysics Data System (ADS)
Asquini, Rita; d'Alessandro, Antonio; Salusti, Andrea; Gizzi, Claudio
2003-08-01
A tunable waveguide grating router (WGR) design is reported, where a subpicosecond phase shift is obtained by means of the electro-optically induced refractive index change in the arms of an arrayed-waveguide grating (AWG) made of highly nonlinear poled polymer CLD-75/APC. The polymer consists of a guest-host system, formed by a ring-locked phenyltetraene bridged cromophore dispersed in an amorphous polycarbonate, with coefficient r33=55pm/V and propagation losses of 1.7dB/cm. We propose a multilayer structure on Si substrate, where segments of each waveguide of the AWG are sandwiched between a ground gold electrode and electrodes whose length varies over the AWG. Numerical simulations of a device with electrode length difference of 250μm show a tuning range of 11nm centered at 1550nm by varying the applied voltage from -90V to +90V. From the optimized AWG, a WGR operating with 16 channels spaced by 100GHz has been designed. The WGR is made of single-mode rib waveguides and buffers whose thicknesses are respectively 1.8μm and 1.7μm. A broader tunability range is obtained using the push-pull technique, which induces a refractive index change of opposite sign in two halves of the AWG. A crosstalk of -40dB with tuning range of 22nm over the C-band was figured out.
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Ferromagnetic glass-coated microwires with good heating properties for magnetic hyperthermia
Talaat, A.; Alonso, J.; Zhukova, V.; ...
2016-12-01
The heating properties of Fe 71.7Si 11B 13.4Nb 3Ni 0.9 amorphous glass-coated microwires are explored for prospective applications in magnetic hyperthermia. We show that a single 5 mm long wire is able to produce a sufficient amount of heat, with the specific loss power (SLP) reaching a value as high as 521 W/g for an AC field of 700 Oe and a frequency of 310 kHz. The large SLP is attributed to the rectangular hysteresis loop resulting from a peculiar domain structure of the microwire. For an array of parallel microwires, we have observed an SLP improvement by one ordermore » of magnitude; 950 W/g for an AC field of 700 Oe. The magnetostatic interaction strength essential in the array of wires can be manipulated by varying the distance between the wires, showing a decreasing trend in SLP with increasing wire separation. The largest SLP is obtained when the wires are aligned along the direction of the AC field. The origin of the large SLP and relevant heating mechanisms are discussed.« less
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Ferromagnetic glass-coated microwires with good heating properties for magnetic hyperthermia
NASA Astrophysics Data System (ADS)
Talaat, A.; Alonso, J.; Zhukova, V.; Garaio, E.; García, J. A.; Srikanth, H.; Phan, M. H.; Zhukov, A.
2016-12-01
The heating properties of Fe71.7Si11B13.4Nb3Ni0.9 amorphous glass-coated microwires are explored for prospective applications in magnetic hyperthermia. We show that a single 5 mm long wire is able to produce a sufficient amount of heat, with the specific loss power (SLP) reaching a value as high as 521 W/g for an AC field of 700 Oe and a frequency of 310 kHz. The large SLP is attributed to the rectangular hysteresis loop resulting from a peculiar domain structure of the microwire. For an array of parallel microwires, we have observed an SLP improvement by one order of magnitude; 950 W/g for an AC field of 700 Oe. The magnetostatic interaction strength essential in the array of wires can be manipulated by varying the distance between the wires, showing a decreasing trend in SLP with increasing wire separation. The largest SLP is obtained when the wires are aligned along the direction of the AC field. The origin of the large SLP and relevant heating mechanisms are discussed.
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Ferromagnetic glass-coated microwires with good heating properties for magnetic hyperthermia
DOE Office of Scientific and Technical Information (OSTI.GOV)
Talaat, A.; Alonso, J.; Zhukova, V.
The heating properties of Fe 71.7Si 11B 13.4Nb 3Ni 0.9 amorphous glass-coated microwires are explored for prospective applications in magnetic hyperthermia. We show that a single 5 mm long wire is able to produce a sufficient amount of heat, with the specific loss power (SLP) reaching a value as high as 521 W/g for an AC field of 700 Oe and a frequency of 310 kHz. The large SLP is attributed to the rectangular hysteresis loop resulting from a peculiar domain structure of the microwire. For an array of parallel microwires, we have observed an SLP improvement by one ordermore » of magnitude; 950 W/g for an AC field of 700 Oe. The magnetostatic interaction strength essential in the array of wires can be manipulated by varying the distance between the wires, showing a decreasing trend in SLP with increasing wire separation. The largest SLP is obtained when the wires are aligned along the direction of the AC field. The origin of the large SLP and relevant heating mechanisms are discussed.« less
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Ferromagnetic glass-coated microwires with good heating properties for magnetic hyperthermia
Talaat, A.; Alonso, J.; Zhukova, V.; Garaio, E.; García, J. A.; Srikanth, H.; Phan, M. H.; Zhukov, A.
2016-01-01
The heating properties of Fe71.7Si11B13.4Nb3Ni0.9 amorphous glass-coated microwires are explored for prospective applications in magnetic hyperthermia. We show that a single 5 mm long wire is able to produce a sufficient amount of heat, with the specific loss power (SLP) reaching a value as high as 521 W/g for an AC field of 700 Oe and a frequency of 310 kHz. The large SLP is attributed to the rectangular hysteresis loop resulting from a peculiar domain structure of the microwire. For an array of parallel microwires, we have observed an SLP improvement by one order of magnitude; 950 W/g for an AC field of 700 Oe. The magnetostatic interaction strength essential in the array of wires can be manipulated by varying the distance between the wires, showing a decreasing trend in SLP with increasing wire separation. The largest SLP is obtained when the wires are aligned along the direction of the AC field. The origin of the large SLP and relevant heating mechanisms are discussed. PMID:27991557
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Crystal structure of laser-induced subsurface modifications in Si
DOE Office of Scientific and Technical Information (OSTI.GOV)
Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.
2015-06-04
Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystalmore » structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.« less
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NASA Astrophysics Data System (ADS)
Withanage, Wenura K.; Penmatsa, Sashank V.; Acharya, Narendra; Melbourne, Thomas; Cunnane, D.; Karasik, B. S.; Xi, X. X.
2018-07-01
We report on the growth of high quality MgB2 thin films on silicon and silicon-on-insulator substrates by hybrid physical chemical vapor deposition. A boron buffer layer was deposited on all sides of the Si substrate to prevent the reaction of Mg vapor and Si. Ar ion milling at a low angle of 1° was used to reduce the roughness of the boron buffer layer before the MgB2 growth. An Ar ion milling at low angle of 1° was also applied to the MgB2 surface to reduce its roughness. The resultant MgB2 films showed excellent superconducting properties and a smooth surface. The process produces thin MgB2 films suitable for waveguide-based superconducting hot electron bolometers and other MgB2-based electronic devices.
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Hybrid integrated single-wavelength laser with silicon micro-ring reflector
NASA Astrophysics Data System (ADS)
Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian
2018-02-01
A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.
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Sekiguchi, Takashi; Hu, Junqing; Bando, Yoshio
2004-01-01
Luminescence properties of one-dimensional free-standing widegap-semiconductor nanostructures were characterized by means of cathodoluminescence (CL). GaN nanopipes, alpha-Si3N4 nanobelts and ZnS/Si nanowires were fabricated by a catalyst-free method, namely grown in an induction furnace from powders. After the observation of morphology by scanning electron microscopy as well as the confirmation of their crystal structures by transmission electron microscopy, their CL spectra and images were observed. The CL spectra mapping as well as the monochromatic CL imaging revealed the variation of the luminescence spectra of different nanowires as well as that along a single wire. These results revealed the optical features of nanostructures.
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Aluminum-Stabilized Magnesium Diboride Superconductors
NASA Astrophysics Data System (ADS)
Dou, S. X.; Collings, E. W.; Shcherbakova, O.; Shcherbakov, A.
2006-03-01
Use of aluminum as stabilizer and iron as reaction barrier for fabrication of MgB2 superconductor wires was studied. The MgB2/Fe/Al or SiC doped MgB2/Fe/Al composite wires were made using Mg+ 2 B powder or SiC doped Mg+2 B powder in Fe/Al tube technique. The composites were processed at 600°C to 650°C for 30 minutes to 3 hours to study the interaction between Fe and Al sheath and the formation of MgB2. No reaction between Fe and Al was found until annealing temperature at 620°C for 30 minutes. A thin layer of alloy, FeAl3 is formed for samples annealed at 620°C for 90 minutes and the reaction layer increases with increasing annealing temperature. Annealing at 650°C resulted in cracks in the Al sheath. Our results show that the Fe/Al sheathed wires achieved the same performance in magnetic and electrical properties as those using an all-Fe sheath. Comparing with the standard NbTi/Cu conductors, the MgB2/Fe/Al conductor having low structural mass, greater thermal conductivity and high efficient stabilization will make a tremendous difference especially for airborne, aerospace, and other applications when weight is important.
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Wang, Jun-Qiang; Wang, Yu; Feng, Yun; Han, Wei; Su, Yong-Gang; Liu, Wen-Yong; Zhang, Wei-Jun; Wu, Xin-Bao; Wang, Man-Yi; Fan, Yu-Bo
2017-01-01
Background: Sacroiliac (SI) screw fixation is a demanding technique, with a high rate of screw malposition due to the complex pelvic anatomy. TiRobot™ is an orthopedic surgery robot which can be used for SI screw fixation. This study aimed to evaluate the accuracy of robot-assisted placement of SI screws compared with a freehand technique. Methods: Thirty patients requiring posterior pelvic ring stabilization were randomized to receive freehand or robot-assisted SI screw fixation, between January 2016 and June 2016 at Beijing Jishuitan Hospital. Forty-five screws were placed at levels S1 and S2. In both methods, the primary end point screw position was assessed and classified using postoperative computed tomography. Fisher's exact probability test was used to analyze the screws’ positions. Secondary end points, such as duration of trajectory planning, surgical time after reduction of the pelvis, insertion time for guide wire, number of guide wire attempts, and radiation exposure without pelvic reduction, were also assessed. Results: Twenty-three screws were placed in the robot-assisted group and 22 screws in the freehand group; no postoperative complications or revisions were reported. The excellent and good rate of screw placement was 100% in the robot-assisted group and 95% in the freehand group. The P value (0.009) showed the same superiority in screw distribution. The fluoroscopy time after pelvic reduction in the robot-assisted group was significantly shorter than that in the freehand group (median [Q1, Q3]: 6.0 [6.0, 9.0] s vs. median [Q1, Q3]: 36.0 [21.5, 48.0] s; χ2 = 13.590, respectively, P < 0.001); no difference in operation time after reduction of the pelvis was noted (χ2 = 1.990, P = 0.158). Time for guide wire insertion was significantly shorter for the robot-assisted group than that for the freehand group (median [Q1, Q3]: 2.0 [2.0, 2.7] min vs. median [Q1, Q3]: 19.0 [15.5, 45.0] min; χ2 = 20.952, respectively, P < 0.001). The number of guide wire attempts in the robot-assisted group was significantly less than that in the freehand group (median [Q1, Q3]: 1.0 [1.0,1.0] time vs. median [Q1, Q3]: 7.0 [1.0, 9.0] times; χ2 = 15.771, respectively, P < 0.001). The instrumented SI levels did not differ between both groups (from S1 to S2, χ2 = 4.760, P = 0.093). Conclusions: Accuracy of the robot-assisted technique was superior to that of the freehand technique. Robot-assisted navigation is safe for unstable posterior pelvic ring stabilization, especially in S1, but also in S2. SI screw insertion with robot-assisted navigation is clinically feasible. PMID:29067950
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Wang, Jun-Qiang; Wang, Yu; Feng, Yun; Han, Wei; Su, Yong-Gang; Liu, Wen-Yong; Zhang, Wei-Jun; Wu, Xin-Bao; Wang, Man-Yi; Fan, Yu-Bo
2017-11-05
Sacroiliac (SI) screw fixation is a demanding technique, with a high rate of screw malposition due to the complex pelvic anatomy. TiRobot™ is an orthopedic surgery robot which can be used for SI screw fixation. This study aimed to evaluate the accuracy of robot-assisted placement of SI screws compared with a freehand technique. Thirty patients requiring posterior pelvic ring stabilization were randomized to receive freehand or robot-assisted SI screw fixation, between January 2016 and June 2016 at Beijing Jishuitan Hospital. Forty-five screws were placed at levels S1 and S2. In both methods, the primary end point screw position was assessed and classified using postoperative computed tomography. Fisher's exact probability test was used to analyze the screws' positions. Secondary end points, such as duration of trajectory planning, surgical time after reduction of the pelvis, insertion time for guide wire, number of guide wire attempts, and radiation exposure without pelvic reduction, were also assessed. Twenty-three screws were placed in the robot-assisted group and 22 screws in the freehand group; no postoperative complications or revisions were reported. The excellent and good rate of screw placement was 100% in the robot-assisted group and 95% in the freehand group. The P value (0.009) showed the same superiority in screw distribution. The fluoroscopy time after pelvic reduction in the robot-assisted group was significantly shorter than that in the freehand group (median [Q1, Q3]: 6.0 [6.0, 9.0] s vs. median [Q1, Q3]: 36.0 [21.5, 48.0] s; χ2 = 13.590, respectively, P < 0.001); no difference in operation time after reduction of the pelvis was noted (χ2 = 1.990, P = 0.158). Time for guide wire insertion was significantly shorter for the robot-assisted group than that for the freehand group (median [Q1, Q3]: 2.0 [2.0, 2.7] min vs. median [Q1, Q3]: 19.0 [15.5, 45.0] min; χ2 = 20.952, respectively, P < 0.001). The number of guide wire attempts in the robot-assisted group was significantly less than that in the freehand group (median [Q1, Q3]: 1.0 [1.0,1.0] time vs. median [Q1, Q3]: 7.0 [1.0, 9.0] times; χ2 = 15.771, respectively, P < 0.001). The instrumented SI levels did not differ between both groups (from S1 to S2, χ2 = 4.760, P = 0.093). Accuracy of the robot-assisted technique was superior to that of the freehand technique. Robot-assisted navigation is safe for unstable posterior pelvic ring stabilization, especially in S1, but also in S2. SI screw insertion with robot-assisted navigation is clinically feasible.
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Lavdas, Spyros; Driscoll, Jeffrey B; Jiang, Hongyi; Grote, Richard R; Osgood, Richard M; Panoiu, Nicolae C
2013-10-01
We study the generation of parabolic self-similar optical pulses in tapered Si photonic nanowires (Si-PhNWs) at both telecom (λ=1.55 μm) and mid-infrared (λ=2.2 μm) wavelengths. Our computational study is based on a rigorous theoretical model, which fully describes the influence of linear and nonlinear optical effects on pulse propagation in Si-PhNWs with arbitrarily varying width. Numerical simulations demonstrate that, in the normal dispersion regime, optical pulses evolve naturally into parabolic pulses upon propagation in millimeter-long tapered Si-PhNWs, with the efficiency of this pulse-reshaping process being strongly dependent on the spectral and pulse parameter regime in which the device operates, as well as the particular shape of the Si-PhNWs.
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Optical properties of in-vitro biomineralised silica.
Polini, Alessandro; Pagliara, Stefano; Camposeo, Andrea; Cingolani, Roberto; Wang, Xiaohong; Schröder, Heinz C; Müller, Werner E G; Pisignano, Dario
2012-01-01
Silicon is the second most common element on the Earth's crust and its oxide (SiO(2)) the most abundant mineral. Silica and silicates are widely used in medicine and industry as well as in micro- and nano-optics and electronics. However, the fabrication of glass fibres and components requires high temperature and non-physiological conditions, in contrast to biosilica structures in animals and plants. Here, we show for the first time the use of recombinant silicatein-α, the most abundant subunit of sponge proteins catalyzing biosilicification reactions, to direct the formation of optical waveguides in-vitro through soft microlithography. The artificial biosilica fibres mimic the natural sponge spicules, exhibiting refractive index values suitable for confinement of light within waveguides, with optical losses in the range of 5-10 cm(-1), suitable for application in lab-on-chips systems. This method extends biosilicification to the controlled fabrication of optical components by physiological processing conditions, hardly addressed by conventional technologies.
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Waveguide integrated low noise NbTiN nanowire single-photon detectors with milli-Hz dark count rate
Schuck, Carsten; Pernice, Wolfram H. P.; Tang, Hong X.
2013-01-01
Superconducting nanowire single-photon detectors are an ideal match for integrated quantum photonic circuits due to their high detection efficiency for telecom wavelength photons. Quantum optical technology also requires single-photon detection with low dark count rate and high timing accuracy. Here we present very low noise superconducting nanowire single-photon detectors based on NbTiN thin films patterned directly on top of Si3N4 waveguides. We systematically investigate a large variety of detector designs and characterize their detection noise performance. Milli-Hz dark count rates are demonstrated over the entire operating range of the nanowire detectors which also feature low timing jitter. The ultra-low dark count rate, in combination with the high detection efficiency inherent to our travelling wave detector geometry, gives rise to a measured noise equivalent power at the 10−20 W/Hz1/2 level. PMID:23714696
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Room-temperature-deposited dielectrics and superconductors for integrated photonics.
Shainline, Jeffrey M; Buckley, Sonia M; Nader, Nima; Gentry, Cale M; Cossel, Kevin C; Cleary, Justin W; Popović, Miloš; Newbury, Nathan R; Nam, Sae Woo; Mirin, Richard P
2017-05-01
We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating low cost and high scalability. We have shown low-loss SiN waveguides, high-Q ring resonators, critically coupled ring resonators, 50/50 beam splitters, Mach-Zehnder interferometers (MZIs) and a process-agnostic fiber packaging scheme. We have further explored the utility of this process for applications in nonlinear optics and quantum photonics. We demonstrate spectral tailoring and octave-spanning supercontinuum generation as well as the integration of superconducting nanowire single photon detectors with MZIs and channel-dropping filters. The packaging approach is suitable for operation up to 160 °C as well as below 1 K. The process is well suited for augmentation of existing foundry capabilities or as a stand-alone process.
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Packaging Technologies for 500C SiC Electronics and Sensors
NASA Technical Reports Server (NTRS)
Chen, Liang-Yu
2013-01-01
Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.
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First-principles simulation on Seebeck coefficient in silicon nanowires
NASA Astrophysics Data System (ADS)
Nakamura, Koichi
2017-06-01
The Seebeck coefficients of silicon nanowires (SiNWs) were simulated on the basis of first-principles calculation using various atomistic structure models. The electronic band structures of fully hydrogen-terminated SiNW models give the correct image of quantum mechanical confinement from bulk silicon to SiNW for each axial direction, and the change in the density of states by dimensional reduction to SiNW enhances the thermoelectric performance in terms of the Seebeck coefficient, compared with those of bulk silicon and silicon nanosheets. The uniaxial tensile strain for the SiNW models does not strongly affect the Seebeck coefficient even for the SiNW system with giant piezoresistivity. In contrast, dangling bonds on a wire wall sharply reduce the Seebeck coefficient of SiNW and totally degrade thermoelectric performance from the viewpoint of the power factor. The exclusion of dangling bonds is a key element for the design and application of high-performance thermoelectric nanowires of semiconducting materials.
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NASA Astrophysics Data System (ADS)
Gavrilov, G. E.; Vakhtel, V. M.; Maysuzenko, D. A.; Tavtorkina, T. A.; Fetisov, A. A.; Shvetsova, N. Yu.
2017-12-01
A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%CF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.
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Microstructure and Properties of Lap Joint Between Aluminum Alloy and Galvanized Steel by CMT
NASA Astrophysics Data System (ADS)
Niu, Song; Chen, Su; Dong, Honggang; Zhao, Dongsheng; Zhang, Xiaosheng; Guo, Xin; Wang, Guoqiang
2016-05-01
Lap joining of 1-mm-thick Novelist AC 170 PX aluminum alloy to 1.2-mm-thick ST06 Z galvanized steel sheets for automotive applications was conducted by cold metal transfer advanced welding process with ER4043 and ER4047 filler wires. Under the optimized welding parameters with ER4043 filler wire, the tensile shear strength of joint was 189 MPa, reaching 89% of the aluminum alloy base metal. Microstructure and elemental distribution were characterized by optical metalloscope and electron probe microanalysis. The lap joints with ER4043 filler wire had smaller wetting angle and longer bonded line length with better wettability than with ER4047 filler wire during welding with same parameters. The needle-like Al-Fe-Si intermetallic compounds (IMCs) were spalled into the weld and brought negative effect to the tensile strength of joints. With increasing welding current, the needle-like IMCs grew longer and spread further into the weld, which would deteriorate the tensile shear strength.
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Optical biosensor technologies for molecular diagnostics at the point-of-care
NASA Astrophysics Data System (ADS)
Schotter, Joerg; Schrittwieser, Stefan; Muellner, Paul; Melnik, Eva; Hainberger, Rainer; Koppitsch, Guenther; Schrank, Franz; Soulantika, Katerina; Lentijo-Mozo, Sergio; Pelaz, Beatriz; Parak, Wolfgang; Ludwig, Frank; Dieckhoff, Jan
2015-05-01
Label-free optical schemes for molecular biosensing hold a strong promise for point-of-care applications in medical research and diagnostics. Apart from diagnostic requirements in terms of sensitivity, specificity, and multiplexing capability, also other aspects such as ease of use and manufacturability have to be considered in order to pave the way to a practical implementation. We present integrated optical waveguide as well as magnetic nanoparticle based molecular biosensor concepts that address these aspects. The integrated optical waveguide devices are based on low-loss photonic wires made of silicon nitride deposited by a CMOS compatible plasma-enhanced chemical vapor deposition (PECVD) process that allows for backend integration of waveguides on optoelectronic CMOS chips. The molecular detection principle relies on evanescent wave sensing in the 0.85 μm wavelength regime by means of Mach-Zehnder interferometers, which enables on-chip integration of silicon photodiodes and, thus, the realization of system-on-chip solutions. Our nanoparticle-based approach is based on optical observation of the dynamic response of functionalized magneticcore/ noble-metal-shell nanorods (`nanoprobes') to an externally applied time-varying magnetic field. As target molecules specifically bind to the surface of the nanoprobes, the observed dynamics of the nanoprobes changes, and the concentration of target molecules in the sample solution can be quantified. This approach is suitable for dynamic real-time measurements and only requires minimal sample preparation, thus presenting a highly promising point-of-care diagnostic system. In this paper, we present a prototype of a diagnostic device suitable for highly automated sample analysis by our nanoparticle-based approach.
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NASA Astrophysics Data System (ADS)
Date, Kumi; Ishigure, Takaaki
2017-02-01
Polymer optical waveguides with graded-index (GI) circular cores are fabricated using the Mosquito method, in which the positions of parallel cores are accurately controlled. Such an accurate arrangement is of great importance for a high optical coupling efficiency with other optical components such as fiber ribbons. In the Mosquito method that we developed, a core monomer with a viscous liquid state is dispensed into another liquid state monomer for cladding via a syringe needle. Hence, the core positions are likely to shift during or after the dispensing process due to several factors. We investigate the factors, specifically affecting the core height. When the core and cladding monomers are selected appropriately, the effect of the gravity could be negligible, so the core height is maintained uniform, resulting in accurate core heights. The height variance is controlled in +/-2 micrometers for the 12 cores. Meanwhile, larger shift in the core height is observed when the needle-tip position is apart from the substrate surface. One of the possible reasons of the needle-tip height dependence is the asymmetric volume contraction during the monomer curing. We find a linear relationship between the original needle-tip height and the core-height observed. This relationship is implemented in the needle-scan program to stabilize the core height in different layers. Finally, the core heights are accurately controlled even if the cores are aligned on various heights. These results indicate that the Mosquito method enables to fabricate waveguides in which the cores are 3-dimensionally aligned with a high position accuracy.
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Silicon Carbide Temperature Monitor Processing Improvements. Status Report
DOE Office of Scientific and Technical Information (OSTI.GOV)
Unruh, Troy Casey; Daw, Joshua Earl; Ahamad Al Rashdan
2016-01-29
Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whethermore » a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it could be performed in an MFC hot cell, further reducing the time and expense of lengthy decontaminations prior to processing. Sections of this report provide a general description of resistivity techniques currently used to infer peak irradiation temperature from silicon carbide temperature monitors along with some representative data, the proposed concepts to improve the process of analyzing irradiated SiC temperature monitors, the completed efforts to prove the proposed concepts, and future activities. The efforts detailed here succeeded in designing and developing a real-time automated SiC resistivity measurement system, and performed two initial test runs. Activities carried out include the assembly and integration of the system hardware; the design and development of a preliminary monitor fixture; the design of a technique to automate the data analysis and processing; the development of the communication, coordination, and user software; and the execution and troubleshooting of test run experiments using the box furnace. Although the automation system performed as required, the designed fixture did not succeed in establishing the needed electrical contacts with the SiC monitor.« less
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NASA Astrophysics Data System (ADS)
Fountaine, Katherine T.; Ito, Mikinori; Pala, Ragip; Atwater, Harry A.
2016-09-01
Spectrally-selective nanophotonic and plasmonic structures enjoy widespread interest for application as color filters in imaging devices, due to their potential advantages over traditional organic dyes and pigments. Organic dyes are straightforward to implement with predictable optical performance at large pixel size, but suffer from inherent optical cross-talk and stability (UV, thermal, humidity) issues and also exhibit increasingly unpredictable performance as pixel size approaches dye molecule size. Nanophotonic and plasmonic color filters are more robust, but often have polarization- and angle-dependent optical response and/or require large-range periodicity. Herein, we report on design and fabrication of polarization- and angle-insensitive CYM color filters based on a-Si nanopillar arrays as small as 1um2, supported by experiment, simulation, and analytic theory. Analytic waveguide and Mie theories explain the color filtering mechanism- efficient coupling into and interband transition-mediated attenuation of waveguide-like modes—and also guided the FDTD simulation-based optimization of nanopillar array dimensions. The designed a-Si nanopillar arrays were fabricated using e-beam lithography and reactive ion etching; and were subsequently optically characterized, revealing the predicted polarization- and angle-insensitive (±40°) subtractive filter responses. Cyan, yellow, and magenta color filters have each been demonstrated. The effects of nanopillar array size and inter-array spacing were investigated both experimentally and theoretically to probe the issues of ever-shrinking pixel sizes and cross-talk, respectively. Results demonstrate that these nanopillar arrays maintain their performance down to 1um2 pixel sizes with no inter-array spacing. These concepts and results along with color-processed images taken with a fabricated color filter array will be presented and discussed.
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Tantalum pentoxide waveguides and microresonators for VECSEL based frequency combs
NASA Astrophysics Data System (ADS)
Chen Sverre, T.; Woods, J. R. C.; Shaw, E. A.; Hua, Ping; Apostolopoulos, V.; Wilkinson, J. S.; Tropper, A. C.
2018-02-01
Tantalum pentoxide (Ta2O5) is a promising material for mass-producible, multi-functional, integrated photonics circuits on silicon, exhibiting robust electrical, mechanical and thermal properties, as well as good CMOS compatibility. In addition, Ta2O5 has been reported to demonstrate a non-linear response comparable to that of chalcogenide glass, in the region of 3-6 times larger than that of materials such as silica (SiO2) or silicon nitride (Si3N4). In contrast to Si-based dielectrics, it will accept trivalent ytterbium and erbium dopant ions, opening the possibility of on-chip amplification. The high refractive index of Ta2O5 is consistent with small guided mode cross-section area, and allows the construction of micro-ring resonators. Propagation losses as low as 0.2 dB=cm have been reported. In this paper we describe the design of a planar Ta2O5 waveguides optimised for the generation of coherent continuum with near infrared pulse trains at kW peak powers. The Pulse Repetition Frequency (PRF) of the VECSEL can be tuned to a sub-harmonic of the planar micro-ring and the optical pump power applied to the VECSEL can be adjusted so that mode-matching of the VECSEL pulse train with the micro-ring resonator can be achieved. We shall describe the fabrication of Ta2O5 guiding structures, and the characterisation of their nonlinear and other optical properties. Characterisation with conventional lasers will be used to assess the degree of coherent spectral broadening likely to be achievable using these devices when driven by mode-locked VECSELs operating near the current state-of- art for pulse energy and duration.
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Hinakura, Yosuke; Terada, Yosuke; Arai, Hiroyuki; Baba, Toshihiko
2018-04-30
We demonstrate a Si photonic crystal waveguide Mach-Zehnder modulator that incorporates meander-line electrodes to compensate for the phase mismatch between slow light and RF signals. We first employed commonized ground electrodes in the modulator to suppress undesired fluctuations in the electro-optic (EO) response due to coupled slot-line modes of RF signals. Then, we theoretically and experimentally investigated the effect of the phase mismatch on the EO response. We confirmed that meander-line electrodes improve the EO response, particularly in the absence of internal reflection of the RF signals. The cut-off frequency of this device can reach 27 GHz, which allows high-speed modulation up to 50 Gbps.
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Guided magnonic Michelson interferometer
Ahmed, Muhammad H.; Jeske, Jan; Greentree, Andrew D.
2017-01-01
Magnonics is an emerging field with potential applications in classical and quantum information processing. Freely propagating magnons in two-dimensional media are subject to dispersion, which limits their effective range and utility as information carriers. We show the design of a confining magnonic waveguide created by two surface current carrying wires placed above a spin-sheet, which can be used as a primitive for reconfigurable magnonic circuitry. We theoretically demonstrate the ability of such guides to counter the transverse dispersion of the magnon in a spin-sheet, thus extending the range of the magnon. A design of a magnonic directional coupler and controllable Michelson interferometer is shown, demonstrating its utility for information processing tasks. PMID:28134271
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Characterization of spin pumping effect in Permalloy/Cu/Pt microfabricated lateral devices
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yamamoto, Tatsuya, E-mail: tyamamoto@imr.tohoku.ac.jp; Seki, Takeshi; Takanashi, Koki
2014-05-07
We studied ferromagnetic resonance (FMR) for microfabricated lateral devices consisting of a Permalloy (Py) rectangular element and a Pt nano-element bridged by a Cu wire, which were located on a coplanar waveguide. A change in the resonance linewidth (Δf) was observed in the FMR spectra when the distance between Py and Pt (d) was varied. For devices with d < 400 nm, Δf definitely increased, suggesting the enhancement of the Gilbert damping constant (α). We discussed a possible reason for the this enhancement taking into account the increase in the efficiency of spin pumping into Cu due to the spin absorption of themore » attached Pt.« less
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Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics
NASA Astrophysics Data System (ADS)
Qin, Chuan; Gao, Xumin; Yuan, Jialei; Shi, Zheng; Jiang, Yuan; Liu, Yuhuai; Wang, Yongjin; Amano, Hiroshi
2018-05-01
A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.
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Bending stresses and bistable behavior in Fe-rich amorphous wire
NASA Astrophysics Data System (ADS)
Vázquez, M.; Gómez Polo, C.; Velázquez, J.; Hernando, A.
1994-05-01
The aim of this work is to analyze for the first time the changes in magnetic properties of an Fe-rich amorphous wire (Fe77.5Si7.5B15) when it is submitted to bending stresses. Upon a reduction of the radius of curvature, Rc, of the wire (i.e., increasing bending stresses), the main changes in the magnetic properties are summarized as follows: (a) Bistable behavior disappears when reducing Rc below about 11 cm but it is again observed for Rc less than about 2.5 cm. This latter effect is also obtained for short wires (less than around 7 cm) which do not show spontaneous bistability. (b) For the case when bending stresses make bistability disappear, the susceptibility increases more than one order of magnitude with regards to the case of bistable wire, and parallel to the increase of susceptibility, a reduction of remanent magnetization is observed. The disappearance and later occurrence of the bistable behavior with increasing bending stresses are discussed in terms of the tensile and compressive stresses induced when the sample is bent. The possibility of having bistable wires with toroidal symmetry is also discussed owing to its interest for particular applications as pulse generators with reduced size and magnetic switches.
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Habicht, S; Zhao, Q T; Feste, S F; Knoll, L; Trellenkamp, S; Ghyselen, B; Mantl, S
2010-03-12
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.
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Pulsed laser-induced formation of silica nanogrids
2014-01-01
Silica grids with micron to sub-micron mesh sizes and wire diameters of 50 nm are fabricated on fused silica substrates. They are formed by single-pulse structured excimer laser irradiation of a UV-absorbing silicon suboxide (SiO x ) coating through the transparent substrate. A polydimethylsiloxane (PDMS) superstrate (cover layer) coated on top of the SiO x film prior to laser exposure serves as confinement for controlled laser-induced structure formation. At sufficiently high laser fluence, this process leads to grids consisting of a periodic loop network connected to the substrate at regular positions. By an additional high-temperature annealing, the residual SiO x is oxidized, and a pure SiO2 grid is obtained. PACS 81.07.-b; 81.07.Gf; 81.65.Cf PMID:24581305
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2010-12-01
1946. [21 Y. Li and P. Herczfe1d, "Coherent PM Optical Link Employing ACP-PPLL," 1. Light\\\\"{l\\’e TechI /O!., vol. 27 . pp. 1086-1094, 2009. [31 C...Lightli"rn·e TechI /O!. , vol. 22, pp. 57- 62.2004. [4] G. A. finll, C. E. Holton, G. Hull-Allen, ::md W. W. l\\·lorey. mW 1.5 )1111 si ngle
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Low-loss adiabatically-tapered high-contrast gratings for slow-wave modulators on SOI
NASA Astrophysics Data System (ADS)
Sciancalepore, Corrado; Hassan, Karim; Ferrotti, Thomas; Harduin, Julie; Duprez, Hélène; Menezo, Sylvie; Ben Bakir, Badhise
2015-02-01
In this communication, we report about the design, fabrication, and testing of Silicon-based photonic integrated circuits (Si-PICs) including low-loss flat-band slow-light high-contrast-gratings (HCGs) waveguides at 1.31 μm. The light slowdown is achieved in 300-nm-thick silicon-on-insulator (SOI) rib waveguides by patterning adiabatically-tapered highcontrast gratings, capable of providing slow-light propagation with extremely low optical losses, back-scattering, and Fabry-Pérot noise. In detail, the one-dimensional (1-D) grating architecture is capable to provide band-edge group indices ng ~ 25, characterized by overall propagation losses equivalent to those of the index-like propagation regime (~ 1-2 dB/cm). Such photonic band-edge slow-light regime at low propagation losses is made possible by the adiabatic apodization of such 1-D HCGs, thus resulting in a win-win approach where light slow-down regime is reached without additional optical losses penalty. As well as that, a tailored apodization optimized via genetic algorithms allows the flattening of slow-light regime over the wavelength window of interest, therefore suiting well needs for group index stability for modulation purposes and non-linear effects generation. In conclusion, such architectures provide key features suitable for power-efficient high-speed modulators in silicon as well as an extremely low-loss building block for non-linear optics (NLO) which is now available in the Si photonics toolbox.
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Integrated optical silicon IC compatible nanodevices for biosensing applications
NASA Astrophysics Data System (ADS)
Lechuga, Laura M.; Sepulveda, Borja; Llobera, Andreu; Calle, Ana; Dominguez, Carlos M.
2003-04-01
Biological and chemical sensing is one of the application fields where integrated optical nanodevices can play an important role [1]. We present a Silicon Integrated Mach-Zehnder Interferometer Nanodevice using a Total Internal Refraction waveguide configuration. The induced changes due to a biomolecular interactions in the effective refractive index of the waveguide,is monitored by the measurement of the change in the properties of the propagating light. For using this device as a biosensor, the waveguides of the structure must verify two conditions: work in the monomode regime and to have a Surface Sensivity as high as possible in the sensing arm. The MZI device structure is: (i) a Si wafer with a 500 mm thickness (ii) a 2 mm thick thermal Silicon-Oxide layer with a refractive index of 1.46 (iii) a LPCVD Silicon Nitride layer of 100 nm thickness and a refractive index of 2.00, which is used as the guiding layer. To achieve monomode behavior is needed to define a rib structure, with a depth of only 3 nm, on the Silicon Nitride layer by a lithographic step. This rib structure is performed by RIE and is the most critical step in the microfabrication of the device. Over the structure a protective layer of LPCVD SiO2 is deposited, with a 2 mm thickness and a refractive index of 1.46, which is patterned (photolithography) and etched (RIE) to define the sensing arm. The high sensivity of these devices makes them quite suitable for biosensing applications. For that, without loosing their activity the receptors biomolecules are covanlently immobilized, at nanometer scale , on the sensor area surface. Biospecific molecular recognition takes places when the complementary analyte to the receptor is flowed over the receptor using a flow system. Several biosensing applications have been performed with this device as enviromental pollutant control, immunosensing or genetic detection.