Sample records for sic based gas

  1. Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

    2007-01-01

    Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

  2. Development of Sic Gas Sensor Systems

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

    2002-01-01

    Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

  3. The Abundance of SiC2 in Carbon Star Envelopes: Evidence that SiC2 is a gas-phase precursor of SiC dust.

    PubMed

    Massalkhi, Sarah; Agúndez, M; Cernicharo, J; Velilla Prieto, L; Goicoechea, J R; Quintana-Lacaci, G; Fonfría, J P; Alcolea, J; Bujarrabal, V

    2018-03-01

    Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC 2 , SiC, and Si 2 C. To date, the ring molecule SiC 2 has been observed in a handful of evolved stars, while SiC and Si 2 C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC 2 , SiC, and Si 2 C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC 2 , SiC, and Si 2 C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC 2 and to derive SiC 2 fractional abundances in the observed envelopes. We detect SiC 2 in most of the sources, SiC in about half of them, and do not detect Si 2 C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC 2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC 2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC 2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC 2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. The observed behavior of a decline in the SiC 2 abundance with increasing density strongly suggests that SiC 2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars.

  4. The Abundance of SiC2 in Carbon Star Envelopes⋆: Evidence that SiC2 is a gas-phase precursor of SiC dust

    PubMed Central

    Massalkhi, Sarah; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

    2017-01-01

    Context Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aims We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. PMID:29628518

  5. Abundance of SiC2 in carbon star envelopes

    NASA Astrophysics Data System (ADS)

    Massalkhi, S.; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

    2018-03-01

    Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars, and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods: We carried out sensitive observations with the IRAM 30 m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results: We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source except IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked; the SiC radical is probably the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend where the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as evidence of efficient incorporation of SiC2 onto dust grains, a process that is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions: The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. Based on observations carried out with the IRAM 30 m Telescope. IRAM is supported by INSU/CNRS (France), MPG (Germany), and IGN (Spain).

  6. Streptococcal inhibitor of complement promotes innate immune resistance phenotypes of invasive M1T1 group A Streptococcus.

    PubMed

    Pence, Morgan A; Rooijakkers, Suzan H M; Cogen, Anna L; Cole, Jason N; Hollands, Andrew; Gallo, Richard L; Nizet, Victor

    2010-01-01

    Streptococcal inhibitor of complement (SIC) is a highly polymorphic extracellular protein and putative virulence factor secreted by M1 and M57 strains of group A Streptococcus (GAS). The sic gene is highly upregulated in invasive M1T1 GAS isolates following selection of mutations in the covR/S regulatory locus in vivo. Previous work has shown that SIC (allelic form 1.01) binds to and inactivates complement C5b67 and human cathelicidin LL-37. We examined the contribution of SIC to innate immune resistance phenotypes of GAS in the intact organism, using (1) targeted deletion of sic in wild-type and animal-passaged (covS mutant) M1T1 GAS harboring the sic 1.84 allele and (2) heterologous expression of sic in M49 GAS, which does not possess the sic genein its genome. We find that M1T1 SIC production is strongly upregulated upon covS mutation but that the sic gene is not required for generation and selection of covS mutants in vivo. SIC 1.84 bound both human and murine cathelicidins and was necessary and sufficient to promote covS mutant M1T1 GAS resistance to LL-37, growth in human whole blood and virulence in a murine model of systemic infection. Finally, the sic knockout mutant M1T1 GAS strain was deficient in growth in human serum and intracellular macrophage survival. We conclude that SIC contributes to M1T1 GAS immune resistance and virulence phenotypes. Copyright © 2010 S. Karger AG, Basel.

  7. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nabeel Riza

    In this program, Nuonics, Inc. has studied the fundamentals of a new Silicon Carbide (SiC) materials-based optical sensor technology suited for extreme environments of coal-fired engines in power production. The program explored how SiC could be used for sensing temperature, pressure, and potential gas species in a gas turbine environment. The program successfully demonstrated the optical designs, signal processing and experimental data for enabling both temperature and pressure sensing using SiC materials. The program via its sub-contractors also explored gas species sensing using SiC, in this case, no clear commercially deployable method was proven. Extensive temperature and pressure measurement datamore » using the proposed SiC sensors was acquired to 1000 deg-C and 40 atms, respectively. Importantly, a first time packaged all-SiC probe design was successfully operated in a Siemens industrial turbine rig facility with the probe surviving the harsh chemical, pressure, and temperature environment during 28 days of test operations. The probe also survived a 1600 deg-C thermal shock test using an industrial flame.« less

  8. Insight into the molecular basis of pathogen abundance: group A Streptococcus inhibitor of complement inhibits bacterial adherence and internalization into human cells.

    PubMed

    Hoe, Nancy P; Ireland, Robin M; DeLeo, Frank R; Gowen, Brian B; Dorward, David W; Voyich, Jovanka M; Liu, Mengyao; Burns, Eugene H; Culnan, Derek M; Bretscher, Anthony; Musser, James M

    2002-05-28

    Streptococcal inhibitor of complement (Sic) is a secreted protein made predominantly by serotype M1 Group A Streptococcus (GAS), which contributes to persistence in the mammalian upper respiratory tract and epidemics of human disease. Unexpectedly, an isogenic sic-negative mutant adhered to human epithelial cells significantly better than the wild-type parental strain. Purified Sic inhibited the adherence of a sic negative serotype M1 mutant and of non-Sic-producing GAS strains to human epithelial cells. Sic was rapidly internalized by human epithelial cells, inducing cell flattening and loss of microvilli. Ezrin and moesin, human proteins that functionally link the cytoskeleton to the plasma membrane, were identified as Sic-binding proteins by affinity chromatography and matrix-assisted laser desorption/ionization time-of-flight mass spectrometry analysis. Sic colocalized with ezrin inside epithelial cells and bound to the F-actin-binding site region located in the carboxyl terminus of ezrin and moesin. Synthetic peptides corresponding to two regions of Sic had GAS adherence-inhibitory activity equivalent to mature Sic and inhibited binding of Sic to ezrin. In addition, the sic mutant was phagocytosed and killed by human polymorphonuclear leukocytes significantly better than the wild-type strain, and Sic colocalized with ezrin in discrete regions of polymorphonuclear leukocytes. The data suggest that binding of Sic to ezrin alters cellular processes critical for efficient GAS contact, internalization, and killing. Sic enhances bacterial survival by enabling the pathogen to avoid the intracellular environment. This process contributes to the abundance of M1 GAS in human infections and their ability to cause epidemics.

  9. Integrated High Payoff Rocket Propulsion Technology (IHPRPT) SiC Recession Model

    NASA Technical Reports Server (NTRS)

    Opila, E. J.

    2009-01-01

    SiC stability and recession rates were modeled in hydrogen/oxygen combustion environments for the Integrated High Payoff Rocket Propulsion Technology (IHPRPT) program. The IHPRPT program is a government and industry program to improve U.S. rocket propulsion systems. Within this program SiC-based ceramic matrix composites are being considered for transpiration cooled injector faceplates or rocket engine thrust chamber liners. Material testing under conditions representative of these environments was conducted at the NASA Glenn Research Center, Cell 22. For the study described herein, SiC degradation was modeled under these Cell 22 test conditions for comparison to actual test results: molar mixture ratio, MR (O2:H2) = 6, material temperatures to 1700 C, combustion gas pressures between 0.34 and 2.10 atm, and gas velocities between 8,000 and 12,000 fps. Recession was calculated assuming rates were controlled by volatility of thermally grown silica limited by gas boundary layer transport. Assumptions for use of this model were explored, including the presence of silica on the SiC surface, laminar gas boundary layer limited volatility, and accuracy of thermochemical data for volatile Si-O-H species. Recession rates were calculated as a function of temperature. It was found that at 1700 C, the highest temperature considered, the calculated recession rates were negligible, about 200 m/h, relative to the expected lifetime of the material. Results compared favorably to testing observations. Other mechanisms contributing to SiC recession are briefly described including consumption of underlying carbon and pitting. A simple expression for liquid flow on the material surface was developed from a one-dimensional treatment of the Navier-Stokes Equation. This relationship is useful to determine under which conditions glassy coatings or thermally grown silica would flow on the material surface, removing protective layers by shear forces. The velocity of liquid flow was found to depend on the gas velocity, the viscosity of gas and liquid, as well as the thickness of the gas boundary layer and the liquid layer. Calculated flow rates of a borosilicate glass coating compared well to flow rates observed for this coating tested on a SiC panel in Cell 22.

  10. Methylsilane derived silicon carbide particle coatings produced by fluid-bed chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Miller, James Henry

    This report describes the research effort that was undertaken to develop and understand processing techniques for the deposition of both low and high density SiC coatings from a non-halide precursor, in support of the Generation IV Gas-Cooled Fast Reactor (GFR) fuel development program. The research was conducted in two phases. In the first phase, the feasibility of producing both porous SiC coatings and dense SiC coatings on surrogate fuel particles by fluidized bed chemical vapor deposition (FBCVD) using gas mixtures of methylsilane and argon was demonstrated. In the second phase, a combined experimental and modeling effort was carried out in order to gain an understanding of the deposition mechanisms that result in either porous or dense SiC coatings, depending on the coating conditions. For this second phase effort, a simplified (compared to the fluid bed) single-substrate chemical vapor deposition (CVD) system was employed. Based on the experimental and modeling results, the deposition of SiC from methylsilane is controlled by the extent of gas-phase reaction, and is therefore highly sensitive to temperature. The results show that all SiC coatings are due to the surface adsorption of species that result from gas-phase reactions. The model terms these gas-borne species embryos, and while the model does not include a prediction of coating morphology, a comparison of the model and experimental results indicates that the morphology of the coatings is controlled by the nucleation and growth of the embryos. The coating that results from small embryos (embryos with only two Si-C pairs) appears relatively dense and continuous, while the coating that results from larger embryos becomes less continuous and more nodular as embryo size increases. At some point in the growth of embryos they cease to behave as molecular species and instead behave as particles that grow by either agglomeration or by incorporation of molecular species on their surface. As these particles adhere to the substrate surface and become fixed in place by surface deposition in the interstices between adjacent particles, a low density coating consisting of these particles results.

  11. The Paralinear Oxidation of SiC in Combustion Environments

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Greenbauer-Seng, Leslie (Technical Monitor)

    2000-01-01

    SiC is proposed for structural applications in high pressure, high temperature. high gas velocity environments of turbine and rocket engines. These environments are typically composed of complex gas mixtures containing carbon dioxide, oxygen, water vapor, and nitrogen. It is known that the primary oxidant for SiC in these environments is water vapor.

  12. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...); 211112Natural Gas Liquid Extraction Limited to facilities that recover sulfur from natural gas (previously classified under SIC 2819, Industrial Inorganic chemicals, NEC (recovering sulfur from natural gas... engaged in providing combinations of electric, gas, and other services, not elsewhere classified (N.E.C...

  13. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...); 211112Natural Gas Liquid Extraction Limited to facilities that recover sulfur from natural gas (previously classified under SIC 2819, Industrial Inorganic chemicals, NEC (recovering sulfur from natural gas... engaged in providing combinations of electric, gas, and other services, not elsewhere classified (N.E.C...

  14. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...); 211112Natural Gas Liquid Extraction Limited to facilities that recover sulfur from natural gas (previously classified under SIC 2819, Industrial Inorganic chemicals, NEC (recovering sulfur from natural gas... engaged in providing combinations of electric, gas, and other services, not elsewhere classified (N.E.C...

  15. Behavior of ceramics at 1200 C in a simulated gas turbine environment

    NASA Technical Reports Server (NTRS)

    Sanders, W. A.; Probst, H. B.

    1974-01-01

    This report summarizes programs at the NASA Lewis Research Center evaluating several classes of commercial ceramics, in a high gas velocity burner rig simulating a gas turbine engine environment. Testing of 23 ceramics in rod geometry identified SiC and Si3N4 as outstanding in resistance to oxidation and thermal stress and identified the failure modes of other ceramics. Further testing of a group of 15 types of SiC and Si3N4 in simulated vane shape geometry has identified a hot pressed SiC, a reaction sintered SiC, and hot pressed Si3N4 as the best of that group. SiC and Si3N4 test specimens were compared on the basis of weight change, dimensional reductions, metallography, fluorescent penetrant inspection, X-ray diffraction analyses, and failure mode.

  16. Seroprevalence of Streptococcal Inhibitor of Complement (SIC) suggests association of streptococcal infection with chronic kidney disease

    PubMed Central

    2013-01-01

    Background Group A streptococcus (GAS) is an etiological agent for the immune mediated sequela post streptococcal glomerulonephritis (PSGN). In some populations PSGN is recognized as a risk factor for chronic kidney disease (CKD) and end-stage renal disease (ESRD). It was found that a significantly greater proportion of subjects with past history of PSGN than without the history exhibited seroreactions to streptococcal antigens called streptococcal inhibitor of complement (SIC) and to distantly related SIC (DRS). These antigens are expressed by major PSGN-associated GAS types. We therefore predicted that in populations such as India, which is endemic for streptococcal diseases and which has high prevalence of CKD and ESRD, greater proportions of CKD and ESRD patients exhibit seroreaction to SIC and DRS than healthy controls. Methods To test this we conducted a SIC and DRS seroprevalence study in subjects from Mumbai area. We recruited 100 CKD, 70 ESRD and 70 healthy individuals. Results Nineteen and 35.7% of CKD and ESRD subjects respectively were SIC antibody-positive, whereas only 7% of healthy cohort was seropositive to SIC. Furthermore, significantly greater proportion of the ESRD patients than the CKD patients is seropositive to SIC (p=0.02; odds ratio 2.37). No association was found between the renal diseases and DRS-antibody-positivity. Conclusions Past infection with SIC-positive GAS is a risk factor for CKD and ESRD in Mumbai population. Furthermore, SIC seropositivity is predictive of poor prognosis of CKD patients. PMID:23642030

  17. Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    NASA Astrophysics Data System (ADS)

    Esakky, Papanasam; Kailath, Binsu J.

    2017-08-01

    HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

  18. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nabeel A. Riza

    The goals of the Year 2006 Continuation Phase 2 three months period (April 1 to Sept. 30) of this project were to (a) conduct a probe elements industrial environment feasibility study and (b) fabricate embedded optical phase or microstructured SiC chips for individual gas species sensing. Specifically, SiC chips for temperature and pressure probe industrial applications were batch fabricated. Next, these chips were subject to a quality test for use in the probe sensor. A batch of the best chips for probe design were selected and subject to further tests that included sensor performance based on corrosive chemical exposure, powermore » plant soot exposure, light polarization variations, and extreme temperature soaking. Experimental data were investigated in detail to analyze these mentioned industrial parameters relevant to a power plant. Probe design was provided to overcome mechanical vibrations. All these goals have been achieved and are described in detail in the report. The other main focus of the reported work is to modify the SiC chip by fabricating an embedded optical phase or microstructures within the chip to enable gas species sensing under high temperature and pressure. This has been done in the Kar UCF Lab. using a laser-based system whose design and operation is explained. Experimental data from the embedded optical phase-based chip for changing temperatures is provided and shown to be isolated from gas pressure and species. These design and experimentation results are summarized to give positive conclusions on the proposed high temperature high pressure gas species detection optical sensor technology.« less

  19. SiC Recession Due to SiO2 Scale Volatility Under Combustor Conditions

    NASA Technical Reports Server (NTRS)

    Robinson, Raymond Craig

    1997-01-01

    One of today's most important and challenging technological problems is the development of advanced materials and processes required to design and build a fleet of supersonic High Speed Civil Transport (HSCT) airliners, a follow-up to the Concorde SST. The innovative combustor designs required for HSCT engines will need high-temperature materials with long-term environmental stability. Higher combustor liner temperatures than today's engines and the need for lightweight materials will require the use of advanced ceramic-matrix composites (CMC's) in hot-section components. The HSCT is just one example being used to demonstrate the need for such materials. This thesis evaluates silicon carbide (SiC) as a potential base material for HSCT and other similar applications. Key issues are the environmental durability for the materials of interest. One of the leading combustor design schemes leads to an environment which will contain both oxidizing and reducing gas mixtures. The concern is that these environments may affect the stability of the silica (SiO2) scale on which SiC depends for environmental protection. A unique High Pressure Burner Rig (HPBR) was developed to simulate the combustor conditions of future gas turbine engines, and a series of tests were conducted on commercially available SiC material. These tests are intended as a feasibility study for the use of these materials in applications such as the HSCT. Linear weight loss and surface recession of the SiC is observed as a result of SiO2 volatility for both fuel-lean and fuel-rich gas mixtures. These observations are compared and agree well with thermogravimetric analysis (TGA) experiments. A strong Arrhenius-type temperature dependence exists. In addition, the secondary dependencies of pressure and gas velocity are defined. As a result, a model is developed to enable extrapolation to points outside the experimental space of the burner rig, and in particular, to potential gas turbine engine conditions.

  20. Volatile Reaction Products From Silicon-Based Ceramics in Combustion Environments Identified

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.

    1997-01-01

    Silicon-based ceramics and composites are prime candidates for use as components in the hot sections of advanced aircraft engines. These materials must have long-term durability in the combustion environment. Because water vapor is always present as a major product of combustion in the engine environment, its effect on the durability of silicon-based ceramics must be understood. In combustion environments, silicon-based ceramics react with water vapor to form a surface silica (SiO2) scale. This SiO2 scale, in turn, has been found to react with water vapor to form volatile hydroxides. Studies to date have focused on how water vapor reacts with high-purity silicon carbide (SiC) and SiO2 in model combustion environments. Because the combustion environment in advanced aircraft engines is expected to contain about 10-percent water vapor at 10-atm total pressure, the durability of SiC and SiO2 in gas mixtures containing 0.1- to 1-atm water vapor is of interest. The reactions of SiC and SiO2 with water vapor were monitored by measuring weight changes of sample coupons in a 0.5-atm water vapor/0.5-atm oxygen gas mixture with thermogravimetric analysis.

  1. Determination of He and D permeability of neutron-irradiated SiC tubes to examine the potential for release due to micro-cracking

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Katoh, Yutai; Hu, Xunxiang; Koyanagi, Takaaki

    Driven by the need to enlarge the safety margins of light water reactors in both design-basis and beyond-design-basis accident scenarios, the research and development of accident-tolerant fuel (ATF) has become an importance topic in the nuclear engineering and materials community. Continuous SiC fiber-reinforced SiC matrix ceramic composites are under consideration as a replacement for traditional zirconium alloy cladding owing to their high-temperature stability, chemical inertness, and exceptional irradiation resistance. Among the key technical feasibility issues, potential failure of the fission product containment due to probabilistic penetrating cracking has been identified as one of the two most critical feasibility issues, togethermore » with the radiolysisassisted hydrothermal corrosion of SiC. The experimental capability to evaluate the hermeticity of SiC-based claddings is an urgent need. In this report, we present the development of a comprehensive permeation testing station established in the Low Activation Materials Development and Analysis laboratory at Oak Ridge National Laboratory. Preliminary results for the hermeticity evaluation of un-irradiated monolithic SiC tubes, uncoated and coated SiC/SiC composite tubes, and neutron-irradiated monolithic SiC tubes at room temperature are exhibited. The results indicate that this new permeation testing station is capable of evaluating the hermeticity of SiC-based tubes by determining the helium and deuterium permeation flux as a function of gas pressure at a high resolution of 8.07 x 10 -12 atm-cc/s for helium and 2.83 x 10 -12 atm-cc/s for deuterium, respectively. The detection limit of this system is sufficient to evaluate the maximum allowable helium leakage rate of lab-scale tubular samples, which is linearly extrapolated from the evaluation standard used for a commercial as-manufactured light water reactor fuel rod at room temperature. The un-irradiated monolithic SiC tube is hermetic, as is manifested by the un-detectable deuterium permeation flux at various feeding gas pressures. A large helium leakage rate was detected for the uncoated SiC/SiC composite tube exposed to atmosphere, indicating it is inherently not hermetic. The hermeticity of coated SiC/SiC composite tubes is strongly dependent on the coating materials and the preparation of the substrate SiC/SiC composite samples. To simulate the practical application environment, monolithic CVD SiC tubes were exposed to neutron irradiation at the High Flux Isotope Reactor under high heat flux from the internal surface to the external surface. Although finite element analysis and resonant ultrasound spectroscopy measurement indicated that the combined neutron irradiation and high heat flux gave rise to a high probability of cracking within the sample, the hermeticity evaluation of the tested sample still exhibited gas tightness, emphasizing that SiC cracking is inherently a statistical phenomenon. The developed permeation testing station is capable of measuring the gas permeation flux in the range of interest with full confidence based on the presented results. It is considered a critical pre- /post-irradiation examination technique to characterize SiC-based cladding materials in asreceived and irradiated states to aid the research and development of ATF.« less

  2. SiC-Based Schottky Diode Gas Sensors

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  3. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nabeel A. Riza

    The goals of the this part of the Continuation Phase 2 period (Oct. 1, 06 to March 31, 07) of this project were to (a) fabricate laser-doped SiC wafers and start testing the SiC chips for individual gas species sensing under high temperature and pressure conditions and (b) demonstrate the designs and workings of a temperature probe suited for industrial power generation turbine environment. A focus of the reported work done via Kar UCF LAMP lab. is to fabricate the embedded optical phase or doped microstructures based SiC chips, namely, Chromium (C), Boron (B) and Aluminum (Al) doped 4H-SiC, andmore » to eventually deploy such laser-doped chips to enable gas species sensing under high temperature and pressure. Experimental data is provided from SiC chip optical response for various gas species such as pure N2 and mixtures of N2 and H{sub 2}, N{sub 2} and CO, N{sub 2} and CO{sub 2}, and N{sub 2} and CH{sub 4}. Another main focus of the reported work was a temperature sensor probe assembly design and initial testing. The probe transmit-receive fiber optics were designed and tested for electrically controlled alignment. This probe design was provided to overcome mechanical vibrations in typical industrial scenarios. All these goals have been achieved and are described in detail in the report.« less

  4. A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

    PubMed Central

    Yang, Jie

    2013-01-01

    In this article, an extreme environment-capable temperature sensing system based on state-of-art silicon carbide (SiC) wireless electronics is presented. In conjunction with a Pt-Pb thermocouple, the SiC wireless sensor suite is operable at 450 °C while under centrifugal load greater than 1,000 g. This SiC wireless temperature sensing system is designed to be non-intrusively embedded inside the gas turbine generators, acquiring the temperature information of critical components such as turbine blades, and wirelessly transmitting the information to the receiver located outside the turbine engine. A prototype system was developed and verified up to 450 °C through high temperature lab testing. The combination of the extreme temperature SiC wireless telemetry technology and integrated harsh environment sensors will allow for condition-based in-situ maintenance of power generators and aircraft turbines in field operation, and can be applied in many other industries requiring extreme environment monitoring and maintenance. PMID:23377189

  5. High Velocity Burner Rig Oxidation and Thermal Fatigue Behavior of Si3N4- and SiC Base Ceramics to 1370 Deg C

    NASA Technical Reports Server (NTRS)

    Sanders, W. A.; Johnston, J. R.

    1978-01-01

    One SiC material and three Si3N4 materials including hot-pressed Si3N4 as a baseline were exposed in a Mach-1-gas-velocity burner rig simulating a turbine engine environment. Criteria for the materials selection were: potential for gas-turbine usage, near-net-shape fabricability and commercial/domestic availability. Cyclic exposures of test vanes up to 250 cycles (50 hr at temperature) were at leading-edge temperatures to 1370 C. Materials and batches were compared as to weight change, surface change, fluorescent penetrant inspection, and thermal fatigue behavior. Hot-pressed Si3N4 survived the test to 1370 C with slight weight losses. Two types of reaction-sintered Si3N4 displayed high weight gains and considerable weight-change variability, with one material exhibiting superior thermal fatigue behavior. A siliconized SiC showed slight weight gains, but considerable batch variability in thermal fatigue.

  6. Paralinear Oxidation of CVD SiC in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Hann, Raiford E., Jr.

    1997-01-01

    The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

  7. Chemical compatibility between UO2 fuel and SiC cladding for LWRs. Application to ATF (Accident-Tolerant Fuels)

    NASA Astrophysics Data System (ADS)

    Braun, James; Guéneau, Christine; Alpettaz, Thierry; Sauder, Cédric; Brackx, Emmanuelle; Domenger, Renaud; Gossé, Stéphane; Balbaud-Célérier, Fanny

    2017-04-01

    Silicon carbide-silicon carbide (SiC/SiC) composites are considered to replace the current zirconium-based cladding materials thanks to their good behavior under irradiation and their resistance under oxidative environments at high temperature. In the present work, a thermodynamic analysis of the UO2±x/SiC system is performed. Moreover, using two different experimental methods, the chemical compatibility of SiC towards uranium dioxide, with various oxygen contents (UO2±x) is investigated in the 1500-1970 K temperature range. The reaction leads to the formation of mainly uranium silicides and carbides phases along with CO and SiO gas release. Knudsen Cell Mass Spectrometry is used to measure the gas release occurring during the reaction between UO2+x and SiC powders as function of time and temperature. These experimental conditions are representative of an open system. Diffusion couple experiments with pellets are also performed to study the reaction kinetics in closed system conditions. In both cases, a limited chemical reaction is observed below 1700 K, whereas the reaction is enhanced at higher temperature due to the decomposition of SiC leading to Si vaporization. The temperature of formation of the liquid phase is found to lie between 1850 < T < 1950 K.

  8. Packaging Technologies for High Temperature Electronics and Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

    2013-01-01

    This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

  9. Packaging Technologies for High Temperature Electronics and Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

    2013-01-01

    This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

  10. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tasaka, Akimasa, E-mail: aki-tasaka-load@yahoo.co.jp; Kotaka, Yuki; Oda, Atsushi

    2014-09-01

    In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the numbermore » of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.« less

  11. FORMATION OF SiC GRAINS IN PULSATION-ENHANCED DUST-DRIVEN WIND AROUND CARBON-RICH ASYMPTOTIC GIANT BRANCH STARS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yasuda, Yuki; Kozasa, Takashi, E-mail: yuki@antares-a.sci.hokudai.ac.jp

    2012-02-01

    We investigate the formation of silicon carbide (SiC) grains in the framework of dust-driven wind around pulsating carbon-rich asymptotic giant branch (C-rich AGB) stars to reveal not only the amount but also the size distribution. Two cases are considered for the nucleation process: one is the local thermal equilibrium (LTE) case where the vibration temperature of SiC clusters T{sub v} is equal to the gas temperature as usual, and another is the non-LTE case in which T{sub v} is assumed to be the same as the temperature of small SiC grains. The results of the hydrodynamical calculations for a modelmore » with stellar parameters of mass M{sub *} = 1.0 M{sub Sun }, luminosity L{sub *} = 10{sup 4} L{sub Sun }, effective temperature T{sub eff} = 2600 K, C/O ratio = 1.4, and pulsation period P = 650 days show the following: in the LTE case, SiC grains condense in accelerated outflowing gas after the formation of carbon grains, and the resulting averaged mass ratio of SiC to carbon grains of {approx}10{sup -8} is too small to reproduce the value of 0.01-0.3, which is inferred from the radiative transfer models. On the other hand, in the non-LTE case, the formation region of the SiC grains is more internal and/or almost identical to that of the carbon grains due to the so-called inverse greenhouse effect. The mass ratio of SiC to carbon grains averaged at the outer boundary ranges from 0.098 to 0.23 for the sticking probability {alpha}{sub s} = 0.1-1.0. The size distributions with the peak at {approx}0.2-0.3 {mu}m in radius cover the range of size derived from the analysis of the presolar SiC grains. Thus, the difference between the temperatures of the small cluster and gas plays a crucial role in the formation process of SiC grains around C-rich AGB stars, and this aspect should be explored for the formation process of dust grains in astrophysical environments.« less

  12. An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Okojie, Robert S.; Chen, Liangyu; Spry, D.; Trunek, A.

    2007-01-01

    A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

  13. Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

    2012-11-30

    A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

  14. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nabeel Riza

    This final report contains the main results from a 3-year program to further investigate the merits of SiC-based hybrid sensor designs for extreme environment measurements in gas turbines. The study is divided in three parts. Part 1 studies the material properties of SiC such as temporal response, refractive index change with temperature, and material thermal response reversibility. Sensor data from a combustion rig-test using this SiC sensor technology is analyzed and a robust distributed sensor network design is proposed. Part 2 of the study focuses on introducing redundancy in the sensor signal processing to provide improved temperature measurement robustness. Inmore » this regard, two distinct measurement methods emerge. A first method uses laser wavelength sensitivity of the SiC refractive index behavior and a second method that engages the Black-Body (BB) radiation of the SiC package. Part 3 of the program investigates a new way to measure pressure via a distance measurement technique that applies to hot objects including corrosive fluids.« less

  15. Paralinear Oxidation of CVD SiC in Simulated Fuel-Rich Combustion

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.; Opila, Elizabeth J.; Hann, Raiford E.

    2000-01-01

    The oxidation kinetics of CVD SiC were measured by thermogravimetric analysis (TGA) in a 4H2 (central dot) 12H2O (central dot) 10CO (central dot) 7CO2 (central dot) 67N2 gas mixture flowing at 0.44 cm/s at temperatures between 1300 and 1450 C in fused quartz furnace tubes at I atm total pressure. The SiC was oxidized to form solid SiO2. At less than or = 1350 C, the SiO2 was in turn volatilized. Volatilization kinetics were consistent with the thermodynamic predictions based on SiO formation. These two simultaneous reactions resulted in overall paralinear kinetics. A curve fitting technique was used to determine the linear and parabolic rate constants from the paralinear kinetic data. Volatilization of the protective SiO2 scale resulted in accelerated consumption of SiC. Recession rates under conditions more representative of actual combustors were estimated from the furnace data.

  16. Corrosion Issues for Ceramics in Gas Turbines

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Fox, Dennis S.; Smialek, James L.; Opila, Elizabeth J.; Tortorelli, Peter F.; More, Karren L.; Nickel, Klaus G.; Hirata, Takehiko; Yoshida, Makoto; Yuri, Isao

    2000-01-01

    The requirements for hot-gas-path materials in gas turbine engines are demanding. These materials must maintain high strength and creep resistance in a particularly aggressive environment. A typical gas turbine environment involves high temperatures, rapid gas flow rates, high pressures, and a complex mixture of aggressive gases. Figure 26.1 illustrates the requirements for components of an aircraft engine and critical issues [1]. Currently, heat engines are constructed of metal alloys, which meet these requirements within strict temperature limits. In order to extend these temperature limits, ceramic materials have been considered as potential engine materials, due to their high melting points and stability at high temperatures. These materials include oxides, carbides, borides, and nitrides. Interest in using these materials in engines appears to have begun in the 1940s with BeO-based porcelains [2]. During the 1950s, the efforts shifted to cermets. These were carbide-based materials intended to exploit the best properties of metals and ceramics. During the 1960s and 1970s, the silicon-based ceramics silicon carbide (SiC) and silicon nitride (Si3N4) were extensively developed. Although the desirable high-temperature properties of SiC and Si3N4 had long been known, consolidation of powders into component-sized bodies required the development of a series of specialized processing routes [3]. For SiC, the major consolidation routes are reaction bonding, hot-pressing, and sintering. The use of boron and carbon as additives which enable sintering was a particularly noteworthy advance [4]. For Si3N4 the major consolidation routes are reaction bonding and hot pressing [5]. Reaction-bonding involves nitridation of silicon powder. Hot pressing involves addition of various refractory oxides, such as magnesia (MgO), alumina (Al2O3), and yttria (y2O3). Variations on these processes include a number of routes including Hot Isostatic Pressing (HIP), gas-pressure sintering, sinter-HIPing, and Encapsulation-HIPing. It is important to note that each process involves the addition of secondary elements, which later were shown to dramatically influence oxidation and corrosion behavior. As dense bodies of silicon-based ceramics became more readily available, their desirable high temperature properties were confirmed. These materials retained strength to very high temperatures (i.e. 1300-1400 C). Further, they were lightweight and made from abundant materials. SiC and Si3N4 therefore emerged as leading ceramic candidates for components in heat engines, designed to operate at higher temperatures for better performance and fuel efficiency. The first US programs for ceramics in heat engines have been reviewed [6]. Selected programs on ceramic engine parts are summarized here in regard to their contributions to understanding the corrosion behavior of a heat engine environment.

  17. Silicon carbide ceramic membranes

    NASA Astrophysics Data System (ADS)

    Suwanmethanond, Varaporn

    This dissertation focuses on the preparation of silicon carbide (SiC) ceramic membranes on SiC substrates. An original technique of SiC porous substrate preparation using sintering methods was developed during the work for the completion of the dissertation. The resulting SiC substrates have demonstrated high porosity, high internal surface area, well interconnected surface pore network and, at the same time, good thermal, chemical and mechanical stability. In a further development, sol-gel techniques were used to deposit micro-porous SiC membranes on these SiC porous substrates. The SiC membranes were characterized by a variety of techniques: ideal gas selectivity (He and N2), XRD, BET, SEM, XPS, and AFM. The characterization results confirmed that the asymmetric sol-gel SiC membranes were of high quality, with no cracks or pinholes, and exhibiting high resistance to corrosion and high hydro-thermal stability. In conclusion, the SiC ceramic membrane work was successfully completed. Two publications in international peer reviewed journals resulted out of this work.

  18. Synthesis of micro-sized interconnected Si-C composites

    DOEpatents

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  19. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

    NASA Astrophysics Data System (ADS)

    Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

    2018-02-01

    The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

  20. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nabeel A. Riza

    The goals of the first six months of this project were to begin laying the foundations for both the SiC front-end optical chip fabrication techniques for high pressure gas species sensing as well as the design, assembly, and test of a portable high pressure high temperature calibration test cell chamber for introducing gas species. This calibration cell will be used in the remaining months for proposed first stage high pressure high temperature gas species sensor experimentation and data processing. All these goals have been achieved and are described in detail in the report. Both design process and diagrams for themore » mechanical elements as well as the optical systems are provided. Photographs of the fabricated calibration test chamber cell, the optical sensor setup with the calibration cell, the SiC sample chip holder, and relevant signal processing mathematics are provided. Initial experimental data from both the optical sensor and fabricated test gas species SiC chips is provided. The design and experimentation results are summarized to give positive conclusions on the proposed novel high temperature high pressure gas species detection optical sensor technology.« less

  1. Single Crystal Epitaxy and Characterization of Beta-SiC.

    DTIC Science & Technology

    1982-07-01

    and CH4 (35, 40), SiC] 4 and C3H8 (40-43), SiCl4 and C6H6 (37), SiCl4 and C7H8 (37, 44), and SiC]4 and CCI 4 (45-47). In all cases, the carrier gas...crystal layer on top of the as-formed 8-SiC substrate. Their problem may arise from the use of the gas combination of SiCl4 and CCI 4, because still...falling between those for the CH4- and the C2H4-c-ritaining systems. (4) The SiCl4 /CCI4/H2 System The species considered to be in the gaseous phase of

  2. High temperature alkali corrosion of ceramics in coal gas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pickrell, G.R.; Sun, T.; Brown, J.J.

    1992-02-24

    The high temperature alkali corrosion kinetics of SiC have been systematically investigated from 950 to 1100[degrees]C at 0.63 vol % alkali vapor concentration. The corrosion rate in the presence of alkaliis approximately 10[sup 4] to 10[sup 5] times faster than the oxidation rate of SiC in air. The activation energy associated with the alkali corrosion is 406 kJ/mol, indicating a highly temperature-dependent reaction rate. The rate-controlling step of the overall reaction is likely to be the dissolution of silica in the sodium silicate liquid, based on the oxygen diffusivity data.

  3. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gregory Corman; Krishan Luthra

    This report covers work performed under the Continuous Fiber Ceramic Composites (CFCC) program by GE Global Research and its partners from 1994 through 2005. The processing of prepreg-derived, melt infiltrated (MI) composite systems based on monofilament and multifilament tow SiC fibers is described. Extensive mechanical and environmental exposure characterizations were performed on these systems, as well as on competing Ceramic Matrix Composite (CMC) systems. Although current monofilament SiC fibers have inherent oxidative stability limitations due to their carbon surface coatings, the MI CMC system based on multifilament tow (Hi-Nicalon ) proved to have excellent mechanical, thermal and time-dependent properties. Themore » materials database generated from the material testing was used to design turbine hot gas path components, namely the shroud and combustor liner, utilizing the CMC materials. The feasibility of using such MI CMC materials in gas turbine engines was demonstrated via combustion rig testing of turbine shrouds and combustor liners, and through field engine tests of shrouds in a 2MW engine for >1000 hours. A unique combustion test facility was also developed that allowed coupons of the CMC materials to be exposed to high-pressure, high-velocity combustion gas environments for times up to {approx}4000 hours.« less

  4. The Commercialization of the SiC Flame Sensor

    NASA Astrophysics Data System (ADS)

    Fedison, Jeffrey B.

    2002-03-01

    The technical and scientific steps required to produce large quantities of SiC flame sensors is described. The technical challenges required to understand, fabricate, test and package SiC photodiodes in 1990 were numerous since SiC device know how was embryonic. A sense of urgency for a timely replacement of the Geiger Muller gas discharge tube soon entered the scene. New dual fuel GE Power Systems gas turbines, which were designed to lean burn either natural gas or oil for low NOx emissions required a much higher sensitivity sensor. Joint work between GE CRD and Cree Research sponsored by the GE Aircraft Engine Division developed the know how for the fabrication of high sensitivity, high yield, reliable SiC photodiodes. Yield issues were uncovered and overcome. The urgency for system insertion required that SiC diode and sensor circuitry development needed to be carried out simultaneously with power plant field tests of laboratory or prototype sensor assemblies. The sensor and reliability specifications were stringent since the sensors installed on power plant turbine combustor walls are subjected to high levels of vibration, elevated temperatures, and high pressures. Furthermore a fast recovery time was required to sense flame out in spite of the fact that the amplifier circuit needed have high gain and high dynamic range. SiC diode technical difficulties were encountered and overcome. The science of hydrocarbon flames will also be described together with the fortunate overlap of the strong OH emission band with the SiC photodiode sensitivity versus wavelength characteristic. The extremely low dark current (<1pA/cm^2) afforded by the wide band gap and the 3eV sensitivity cutoff at 400nm made if possible to produce low amplifier offsets, high sensitivity and high dynamic range along with immunity to black body radiation from combustor walls. Field tests at power plants that had experienced turbine tripping, whenever oil fuel and/or oil with steam injection for power augmentation, were extremely encouraging. This warrantee problem previously due to the low sensitivity of the Geiger Muller tube was solved using the much higher sensitivity SiC detector. This sensitivity increase is partially due to the fact that the SiC photodiode “sees” the strong OH emission band whereas the Geiger Muller tube can only respond to the shorter wavelength CO emission band. Other successful field tests were observed and acclaimed by power plant operators, which for the first time could track mode switching and power level (flame intensity) because of the high dynamic range (>5000:1). The demand for this product thereupon rose dramatically. This success, the first for SiC devices other than that of SiC blue LEDs, is leading GE to implement this technology in other application fields.

  5. Progress in SiC/SiC Ceramic Composite Development for Gas Turbine Hot-Section Components under NASA EPM and UEET Programs

    NASA Technical Reports Server (NTRS)

    DiCarlo, J. A.; Yun, Hee Mann; Morscher, Gregory N.; Bhatt, Ramakrishna T.

    2002-01-01

    The successful application of ceramic matrix composites as hot-section components in advanced gas turbine engines will require the development of constituent materials and processes that can provide the material systems with the key thermostructural properties required for long-term component service. Much initial progress in identifying these materials and processes was made under the former NASA Enabling Propulsion Materials Program using stoichiometric Sylramic (trademark) silicon-carbide (SiC) fibers, 2D (two dimensional)-woven fiber architectures, chemically vapor-infiltrated (CVI) BN fiber coatings (interphases), and SiC-based matrices containing CVI SiC interphase over-coatings, slurry-infiltrated SiC particulate, and melt-infiltrated (MI) silicon. The objective of this paper is to discuss the property benefits of this SiC/SiC composite system for high-temperature engine components and to elaborate on further progress in SiC/SiC development made under the new NASA Ultra Efficient Engine Technology Program. This progress stems from the recent development of advanced constituent materials and manufacturing processes, including specific treatments at NASA that improve the creep, rupture, and environmental resistance of the Sylramic fiber as well as the thermal conductivity and creep resistance of the CVI SiC over-coatings. Also discussed are recent observations concerning the detrimental effects of inadvertent carbon in the fiber-BN interfacial region and the beneficial effects of certain 2D-architectures for thin-walled SiC/SiC panels.

  6. Design and fabrication of a differential scanning nanocalorimeter

    NASA Astrophysics Data System (ADS)

    Zuo, Lei; Chen, Xiaoming; Yu, Shifeng; Lu, Ming

    2017-02-01

    This paper describes the design, fabrication, and characterization of a differential scanning nanocalorimeter that significantly reduces the sample volume to microliters and can potentially improve the temperature sensitivity to 10 µK. The nanocalorimeter consists of a polymeric freestanding membrane, four high-sensitive low-noise thermistors based on silicon carbide (SiC), and a platinum heater and temperature sensor. With the integrated heater and sensors, temperature scanning and power compensation can be achieved for calorimetric measurement. Temperature sensing SiC film was prepared by using sintered SiC target and DC magnetron sputtering under different gas pressures and sputtering power. The SiC sensing material is characterized through the measurement of current-voltage curves and noise levels. The thermal performance of a fabricated nanocalorimeter is studied in simulation and experiment. The experiment results show the device has excellent thermal isolation to hold thermal energy. The noise test together with the simulation show the device is promising for micro 10 µK temperature sensitivity and nanowatt resolution which will lead to low-volume ultra-sensitive nanocalorimetry for biological processes, such as protein folding and ligand binding.

  7. Combustion Gas Heating Tests of C/C Composites Coated with SiC Layer

    NASA Astrophysics Data System (ADS)

    Sato, Masaki; Moriya, Shin-ichi; Sato, Masahiro; Tadano, Makoto; Kusaka, Kazuo; Hasegawa, Keiichi; Kumakawa, Akinaga; Yoshida, Makoto

    2008-02-01

    In order to examine the applicability of carbon fiber/carbon matrix composites coated with a silicon carbide layer (C/C-SiCs) to an advanced nozzle for the future reusable rocket engines, two series of combustion gas heating tests were conducted using a small rocket combustor. In the first series of heating tests, five different kinds of C/C-SiCs were tested with specimens in the shape of a square plate for material screening. In the second series of heating tests, two selected C/C-SiCs were tested with specimens in the shape of a small nozzle. The effectiveness of an interlayer between a C/C composite and a SiC layer, which was introduced to improve the durability based on the concept of functionally graded materials (FGMs), can be observed. The typical damage mode was also pointed out in the results of heating test using the small nozzle specimens.

  8. Wear Measurement of Ceramic Bearings in Gas Turbines

    DTIC Science & Technology

    1990-03-01

    CLASSIFICATION OF THIS PAGE UNCLASSIFIED The primary findings of the program are: a. The method for tagging Si 3N4, SiC, and M50 bearing components to depths of...for tagging Si 3 N4 , SiC, and M50 bearing components to depths of interest in bearings (1-20 microns) was developed, and subcontractors with the...1-2 SECTION 2 BACKGROUND The ball and roller bearings used in gas turbines are generally made of steels (MS0, 52100), and loss of bearing

  9. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  10. Carbothermal Reduction of Quartz with Carbon from Natural Gas

    NASA Astrophysics Data System (ADS)

    Li, Fei; Tangstad, Merete

    2017-04-01

    Carbothermal reaction between quartz and two different carbons originating from natural gas were investigated in this paper. One of two carbons is the commercial carbon black produced from natural gas in a medium thermal production process. The other carbon is obtained from natural gas cracking at 1273 K (1000 °C) deposited directly on the quartz pellet. At the 1923 K (1650 °C) and CO atmosphere, the impact of carbon content, pellet structure, gas transfer, and heating rate are investigated in a thermo-gravimetric furnace. The reaction process can be divided into two steps: an initial SiC-producing step followed by a SiO-producing step. Higher carbon content and increased gas transfer improves the reaction rate of SiC-producing step, while the thicker carbon coating in carbon-deposited pellet hinders reaction rate. Better gas transfer of sample holder improves reaction rate but causes more SiO loss. Heating rate has almost no influence on reaction. Mass balance analysis shows that mole ratios between SiO2, free carbon, and SiC in the SiC-producing step and SiO-producing step in CO and Ar fit the reaction SiO2(s) + 3 C(s) = SiC(s) + 2 CO(g). SiC-particle and SiC-coating formation process in mixed pellet and carbon-deposited pellet are proposed. SiC whiskers formed in the voids of these two types of pellets.

  11. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    PubMed Central

    Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

    2013-01-01

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures. PMID:24113685

  12. Silicon carbide-based hydrogen gas sensors for high-temperature applications.

    PubMed

    Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

    2013-10-09

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  13. Metal-Free Cataluminescence Gas Sensor for Hydrogen Sulfide Based on Its Catalytic Oxidation on Silicon Carbide Nanocages.

    PubMed

    Wu, Liqian; Zhang, Lichun; Sun, Mingxia; Liu, Rui; Yu, Lingzhu; Lv, Yi

    2017-12-19

    Cataluminescence- (CTL-) based sensors are among the most attractive and effective tools for gas sensing, owing to their efficient selectivity, high sensitivity, and rapidity. As the sensing materials of CTL-based sensors, metal-based catalysts easily bring about high costs and environmental pollution of heavy metals. More importantly, the long-term stability of metal-based catalysts is usually rather poor. Metal-free catalysts have unique advantages such as environmental friendliness, low costs, and long-term stability, making them promising materials for CTL-based sensors. Herein, we report the fabrication of a CTL sensor based on a metal-free catalyst. F-doped cage-like SiC was synthesized by wet chemical etching. The as-prepared products showed a rapid, stable, highly selective, and sensitive cataluminescent response to H 2 S. The stability of the sensor was demonstrated to be fairly good for at least 15 days. After CTL tests, F-doped cage-like SiC retained its original morphology, structure, and chemical composition. In addition, to the best of our knowledge, this is the first report of a metal-free CTL sensor. Metal-free catalysts are environmentally friendly and low in cost and exhibit long-term stability, which could open a new avenue of CTL sensing.

  14. Reactions of silicon-based ceramics in mixed oxidation chlorination environments

    NASA Technical Reports Server (NTRS)

    Marra, John E.; Kreidler, Eric R.; Jacobson, Nathan S.; Fox, Dennis S.

    1988-01-01

    The reaction of silicon-based ceramics with 2 percent Cl2/Ar and 1 percent Cl2/1 percent to 20 percent O2/Ar at 950 C was studied with thermogravimetric analysis and high-pressure mass spectrometry. Pure Si, SiO2, several types of SiC, and Si3N4 were examined. The primary corrosion products were SiCl4(g) and SiO2(s) with smaller amounts of volatile silicon oxychlorides. The reactions appear to occur by chlorine penetration of the SiO2 layer, and gas-phase diffusion of the silicon chlorides away from the sample appears to be rate limiting. Pure SiO2 shows very little reaction with Cl2, SiC with excess Si is more reactive than the other materials with Cl2, whereas SiC with excess carbon is more reactive than the other materials with Cl2/O2. Si3N4 shows very little reaction with Cl2. These differences are explained on the basis of thermodynamic and microstructural factors.

  15. Particle Generation and Evolution in Silane/Acetylene Flames in Microgravity

    NASA Technical Reports Server (NTRS)

    Keil, D. G.

    2001-01-01

    The objective of this new experimental program is to advance the understanding of the formation of particles from gas phase combustion processes. The work will utilize the unique SiH4/C2H2 combustion system which generates particulate products ranging from high purity, white SiC to carbonaceous soot depending on equivalence ratio. A key goal of this work is to identify gas phase or particle formation processes that provide the enthalpy release necessary to drive the combustion wave, and to locate the parts of the particle formation process that determine SiC stoichiometry and crystallinity. In a real sense, these SiH4/C2H2 flames act like "highly sooty" hydrocarbon flames, but with simpler chemistry. This simplification is expected to allow them to be used as surrogates to advance understanding of soot formation in such rich hydrocarbon flames. It is also expected that this improved understanding of SiC particle generation and evolution in these self-sustaining flames will advance the commercial potential of the flame process for the generation of high purity SiC powders.

  16. Particle Generation And Evolution In Silane (SiH4)/Acetylene (C2H2) Flames In Microgravity

    NASA Technical Reports Server (NTRS)

    Keil, D. G.

    2003-01-01

    The objective of this experimental program is to advance the understanding of the coupling of particle formation with gas phase combustion processes. The work utilizes the unique SiH4/C2H2 combustion system which generates particulate products ranging from high purity, white SiC to carbonaceous soot depending on equivalence ratio (Ref. 1). A goal of this work is to identify gas phase or particle formation processes that provide the enthalpy release needed to drive the combustion wave, and to locate the steps of the particle formation process that determine SiC stoichiometry and crystallinity. In a real sense, these SiH4/C2H2 flames act like highly sooty hydrocarbon flames, but with simpler chemistry. This simplification is expected to allow them to be used as surrogates to advance understanding of soot formation in such rich hydrocarbon flames. It is also expected that this improved understanding of SiC particle generation and evolution in these self-sustaining flames will advance the commercial potential of the flame process for the generation of high purity SiC powders.

  17. Precursor Selection for Property Optimization in Biomorphic SiC Ceramics

    NASA Technical Reports Server (NTRS)

    Varela-Feria, F. M.; Lopez-Robledo, M. J.; Martinez-Fernandez, J.; deArellano-Lopez, A. R.; Singh, M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Biomorphic SiC ceramics have been fabricated using different wood precursors. The evolution of volume, density and microstructure of the woods, carbon performs, and final SiC products are systematically studied in order to establish experimental guidelines that allow materials selection. The wood density is a critical characteristic, which results in a particular final SiC density, and the level of anisotropy in mechanical properties in directions parallel (axial) and perpendicular (radial) to the growth of the wood. The purpose of this work is to explore experimental laws that can help choose a type of wood as precursor for a final SiC product, with a given microstructure, density and level of anisotropy. Preliminary studies of physical properties suggest that not only mechanical properties are strongly anisotropic, but also electrical conductivity and gas permeability, which have great technological importance.

  18. Melting of SiC powders preplaced duplex stainless steel using TIG welding

    NASA Astrophysics Data System (ADS)

    Maleque, M. A.; Afiq, M.

    2018-01-01

    TIG torch welding technique is a conventional melting technique for the cladding of metallic materials. Duplex stainless steels (DSS) show decrease in performance under aggressive environment which may lead to unanticipated failure due to poor surface properties. In this research, surface modification is done by using TIG torch method where silicon carbide (SiC) particles are fused into DSS substrate in order to form a new intermetallic compound at the surface. The effect of particle size, feed rate of SiC preplacement, energy input and shielding gas flow rate on surface topography, microstructure, microstructure and hardness are investigated. Deepest melt pool (1.237 mm) is produced via TIG torch with highest energy input of 1080 J/mm. Observations of surface topography shows rippling marks which confirms that re-solidification process has taken place. Melt microstructure consist of dendritic and globular carbides precipitate as well as partially melted silicon carbides (SiC) particles. Micro hardness recorded at value ranging from 316 HV0.5 to 1277 HV0.5 which shows increment from base hardness of 260 HV0.5kgf. The analyzed result showed that incorporation of silicon carbide particles via TIG Torch method increase the hardness of DSS.

  19. Design and fabrication of a differential scanning nanocalorimeter

    DOE PAGES

    Zuo, Lei; Chen, Xiaoming; Yu, Shifeng; ...

    2016-12-19

    This paper describes the design, fabrication, and characterization of a differential scanning nanocalorimeter that significantly reduces the sample volume to microliters and can potentially improve the temperature sensitivity to 10 µK. The nanocalorimeter consists of a polymeric freestanding membrane, four high-sensitive low-noise thermistors based on silicon carbide (SiC), and a platinum heater and temperature sensor. With the integrated heater and sensors, temperature scanning and power compensation can be achieved for calorimetric measurement. Temperature sensing SiC film was prepared by using sintered SiC target and DC magnetron sputtering under different gas pressures and sputtering power. The SiC sensing material is characterizedmore » through the measurement of current–voltage curves and noise levels. The thermal performance of a fabricated nanocalorimeter is studied in simulation and experiment. The experiment results show the device has excellent thermal isolation to hold thermal energy. As a result, the noise test together with the simulation show the device is promising for micro 10 µK temperature sensitivity and nanowatt resolution which will lead to low-volume ultra-sensitive nanocalorimetry for biological processes, such as protein folding and ligand binding.« less

  20. SiC Sensors in Extreme Environments: Real-time Hydrogen Monitoring for Energy Plant Applications

    NASA Astrophysics Data System (ADS)

    Ghosh, Ruby

    2008-03-01

    Clean, efficient energy production, such as the gasification of coal (syngas), requires physical and chemical sensors for exhaust gas monitoring as well as real-time control of the combustion process. Wide-bandgap semiconducting materials systems can meet the sensing demands in these extreme environments consisting of chemically corrosive gases at high temperature and pressure. We have developed a SiC based micro-sensor for detection of hydrogen containing species with millisecond response at 600 C. The sensor is a Pt-SiO2-SiC device with a dense Pt catalytic sensing film, capable of withstanding months of continuous high temperature operation. The device was characterized in robust sensing module that is compatible with an industrial reactor. We report on the performance of the SiC sensor in a simulated syngas ambient at 370 C containing the common interferants CO2, CH4 and CO [1]. In addition we demonstrate that hours of exposure to >=1000 ppm H2S and 15% water vapor does not degrade the sensor performance. To elucidate the mechanisms responsible for the hydrogen response of the sensor we have modeled the hydrogen adsorptions kinetics at the internal Pt-SiO2 interface, using both the Tempkin and Langmuir isotherms. Under the conditions appropriate for energy plant applications, the response of our sensor is significantly larger than that obtained from ultra-high vacuum electrochemical sensor measurements at high temperatures. We will discuss the role of morphology, at the nano to micro scale, on the enhanced catalytic activity observed for our Pt sensing films in response to a heated hydrogen gas stream at atmospheric pressure. [1] R. Loloee, B. Chorpening, S. Beers & R. Ghosh, Hydrogen monitoring for power plant applications using SiC sensors, Sens. Actuators B:Chem. (2007), doi:10.1016/j.snb.2007.07.118

  1. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    NASA Astrophysics Data System (ADS)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  2. Shock-activated reaction synthesis and high pressure response of titanium-based ternary carbide and nitride ceramics

    NASA Astrophysics Data System (ADS)

    Jordan, Jennifer Lynn

    The objectives of this study were to (a) investigate the effect of shock activation of precursor powders for solid-state reaction synthesis of Ti-based ternary ceramics and (b) to determine the high pressure phase stability and Hugoniot properties of Ti3SiC2. Dynamically densified compacts of Ti, SiC, and graphite precursor powders and Ti and AlN precursor powders were used to study the shock-activated formation of Ti 3SiC2 and Ti2AlN ternary compounds, respectively, which are considered to be novel ceramics having high stiffness but low hardness. Gas gun and explosive loading techniques were used to obtain a range of loading conditions resulting in densification and activation. Measurements of fraction reacted as a function of time and temperature and activation energies obtained from DTA experiments were used to determine the degree of activation caused by shock compression and its subsequent effect on the reaction mechanisms and kinetics. In both systems, shock activation led to an accelerated rate of reaction at temperatures less than 1600°C and, above that temperature, it promoted the formation of almost 100% of the ternary compound. A kinetics-based mathematical model based on mass and thermal transport was developed to predict the effect of shock activation and reaction synthesis conditions that ensure formation of the ternary compounds. Model predictions revealed a transition temperature above which the reaction is taken over by the "run-away" combustion-type mode. The high pressure phase stability of pre-alloyed Ti 3SiC2 compound was investigated by performing Hugoniot shock and particle velocity measurements using the facilities at the National Institute for Materials Science (Tsukuba, Japan). Experiments performed at pressures of 95--120 GPa showed that the compressibility of Ti3SiC 2 at these pressures deviates from the previously reported compressibility of the material under static high pressure loading. The deviation in compressibility behavior is indicative of the transformation of the Ti3 SiC2 ceramic to a high pressure, high density phase.

  3. Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Xu, Jennifer C.; Lukco, Dorothy

    2006-01-01

    Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.

  4. Observations of Ag diffusion in ion implanted SiC

    DOE PAGES

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

  5. Metallic impurities-silicon carbide interaction in HTGR fuel particles

    NASA Astrophysics Data System (ADS)

    Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

    1990-12-01

    Corrosion of the coating layers of silicon carbide (SiC) by metallic impurities was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors with an optical microscope and an electron probe micro-analyzer. The SiC layers were attacked from the outside of the particles. The main element observed in the corroded areas was iron, but sometimes iron and nickel were found. These elements must have been contained as impurities in the graphite matrix in which the coated particles were dispersed. Since these elements are more stable thermodynamically in the presence of SiC than in the presence of graphite at irradiation temperatures, they were transferred to the SiC layer to form more stable silicides. During fuel manufacturing processes, intensive care should be taken to prevent the fuel from being contaminated with those elements which react with SiC.

  6. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    NASA Technical Reports Server (NTRS)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  7. Comparisons of Gas-phase Temperature Measurements in a Flame Using Thin-Filament Pyrometry and Thermocouples

    NASA Technical Reports Server (NTRS)

    Struk, Peter; Dietrich, Daniel; Valentine, Russell; Feier, Ioan

    2003-01-01

    Less-intrusive, fast-responding, and full-field temperature measurements have long been a desired tool for the research community. Recently, the emission of a silicon-carbide (SiC) fiber placed in a flowing hot (or reacting) gas has been used to measure the temperature profile along the length of the fiber. The relationship between the gas and fiber temperature comes from an energy balance on the fiber. In the present work, we compared single point flame temperature measurements using thin-filament pyrometry (TFP) and thermocouples. The data was from vertically traversing a thermocouple and a SiC fiber through a methanol/air diffusion flame of a porous-metal wick burner. The results showed that the gas temperature using the TFP technique agreed with the thermocouple measurements (25.4 m diameter wire) within 3.5% for temperatures above 1200 K. Additionally, we imaged the entire SiC fiber (with a spatial resolution of 0.14 mm) while it was in the flame using a high resolution CCD camera. The intensity level along the fiber length is a function of the temperature. This results in a one-dimensional temperature profiles at various heights above the burner wick. This temperature measurement technique, while having a precision of less than 1 K, showed data scatter as high as 38 K. Finally, we discuss the major sources of uncertainty in gas temperature measurement using TFP.

  8. Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

    NASA Astrophysics Data System (ADS)

    Ko, Hyunseok

    Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding. We used grand canonical monte carlo to optimize the interface, as a part of the stepping stone for further study using the interface.

  9. Durability and Design Issues of Thermal/environmental Barrier Coatings on Sic/sic Ceramic Matrix Composites Under 1650 C Test Conditions

    NASA Technical Reports Server (NTRS)

    Zhu, Dong-Ming; Choi, Sung R.; Ghosn, Louis J.; Miller, Robert A.

    2004-01-01

    Ceramic thermal/environmental barrier coatings for SiC-based ceramics will play an increasingly important role in future gas turbine engines because of their ability to effectively protect the engine components and further raise engine temperatures. However, the coating durability remains a major concern with the ever-increasing temperature requirements. Currently, advanced T/EBC systems, which typically include a high temperature capable zirconia- (or hahia-) based oxide top coat (thermal barrier) on a less temperature capable mullite/barium-strontium-aluminosilicate (BSAS)/Si inner coat (environmental barrier), are being developed and tested for higher temperature capability Sic combustor applications. In this paper, durability of several thermal/environmental barrier coating systems on SiC/SiC ceramic matrix composites was investigated under laser simulated engine thermal gradient cyclic, and 1650 C (3000 F) test conditions. The coating cracking and delamination processes were monitored and evaluated. The effects of temperature gradients and coating configurations on the ceramic coating crack initiation and propagation were analyzed using finite element analysis (FEA) models based on the observed failure mechanisms, in conjunction with mechanical testing results. The environmental effects on the coating durability will be discussed. The coating design approach will also be presented.

  10. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nabeel A. Riza

    The goals of the second six months of the Phase 2 of this project were to conduct first time experimental studies using optical designs and some initial hardware developed in the first 6 months of Phase 2. One focus is to modify the SiC chip optical properties to enable gas species sensing with a specific gas species under high temperature and pressure. The goal was to acquire sensing test data using two example inert and safe gases and show gas discrimination abilities. A high pressure gas mixing chamber was to be designed and assembled to achieve the mentioned gas sensingmore » needs. Another goal was to initiate high temperature probe design by developing and testing a probe design that leads to accurately measuring the thickness of the deployed SiC sensor chip to enable accurate overall sensor system design. The third goal of this phase of the project was to test the SiC chip under high pressure conditions using the earlier designed calibration cell to enable it to act as a pressure sensor when doing gas detection. In this case, experiments using a controlled pressure system were to deliver repeatable pressure measurement data. All these goals have been achieved and are described in detail in the report. Both design process and diagrams for the mechanical elements as well as the optical systems are provided. Photographs or schematics of the fabricated hardware are provided. Experimental data from the three optical sensor systems (i.e., Thickness, pressure, and gas species) is provided. The design and experimentation results are summarized to give positive conclusions on the proposed novel high temperature high pressure gas species detection optical sensor technology.« less

  11. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    NASA Astrophysics Data System (ADS)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  12. X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Nussupov, K. Kh.; Osipov, A. V.; Beisenkhanov, N. B.; Bakranova, D. I.

    2017-05-01

    The structure and composition of SiC nanolayers are comprehensively studied by X-ray reflectometry, IR-spectroscopy, and atomic-force microscopy (AFM) methods for the first time. SiC films were synthesized by the new method of topochemical substitution of substrate atoms at various temperatures and pressure of CO active gas on the surface of high-resistivity low-dislocation single-crystal n-type silicon (111). Based on an analysis and generalization of experimental data obtained using X-ray reflectometry, IR spectroscopy, and AFM methods, a structural model of SiC films on Si was proposed. According to this model, silicon carbide film consists of a number of layers parallel to the substrate, reminiscent of a layer cake. The composition and thickness of each layer entering the film structure is experimentally determined. It was found that all samples contain superstoichiometric carbon; however, its structure is significantly different for the samples synthesized at temperatures of 1250 and 1330°C, respectively. In the former case, the film surface is saturated with silicon vacancies and carbon in the structurally loose form reminiscent of HOPG carbon. In the films grown at 1330°C, carbon is in a dense structure with a close-to-diamond density.

  13. Advanced SiC/SiC Ceramic Composites For Gas-Turbine Engine Components

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; DiCarlo, J. A.; Easler, T. E.

    2004-01-01

    NASA Glenn Research Center (GRC) is developing a variety of advanced SiC/SiC ceramic composite (ASC) systems that allow these materials to operate for hundreds of hours under stress in air at temperatures approaching 2700 F. These SiC/SiC composite systems are lightweight (approximately 30% metal density) and, in comparison to monolithic ceramics and carbon fiber-reinforced ceramic composites, are able to reliably retain their structural properties for long times under aggressive gas-turbine engine environments. The key for the ASC systems is related first to the NASA development of the Sylramic-iBN Sic fiber, which displays higher thermal stability than any other SiC- based ceramic fibers and possesses an in-situ grown BN surface layer for higher environmental durability. This fiber is simply derived from Sylramic Sic fiber type that is currently produced at ATK COI Ceramics (COIC). Further capability is then derived by using chemical vapor infiltration (CVI) and/or polymer infiltration and pyrolysis (PIP) to form a Sic-based matrix with high creep and rupture resistance as well as high thermal conductivity. The objectives of this study were (1) to optimize the constituents and processing parameters for a Sylramic-iBN fiber reinforced ceramic composite system in which the Sic-based matrix is formed at COIC almost entirely by PIP (full PIP approach), (2) to evaluate the properties of this system in comparison to other 2700 F Sylramic-iBN systems in which the matrix is formed by full CVI and CVI + PIP, and (3) to examine the pros and cons of the full PIP approach for fabricating hot-section engine components. A key goal is the development of a composite system with low porosity, thereby providing high modulus, high matrix cracking strength, high interlaminar strength, and high thermal conductivity, a major property requirement for engine components that will experience high thermal gradients during service. Other key composite property goals are demonstration at high temperatures of high environmental resistance and high creep resistance, which in turn will result in long component life. Data are presented from a variety of laboratory tests on simple two-dimensional panels that examine these properties and compare the performance of the optimized full PIP system with those of the full CVI and CVI + PIP hybrid systems. Underlying mechanisms for performance differences in the various systems are discussed. Remaining issues for further property enhancement and for application of the full PIP approach for engine components are also discussed, as well as on-going approaches at NASA to solve these issues.

  14. A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

    NASA Astrophysics Data System (ADS)

    Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2018-04-01

    We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

  15. Chemical reactivity of SiC fibre-reinforced SiC with beryllium and lithium ceramic breeder materials

    NASA Astrophysics Data System (ADS)

    Kleykamp, H.

    2000-12-01

    SiC fibre-reinforced SiC fabrics (f-SiC/SiC) are considered for structural materials of advanced fusion blanket concepts. Priority tasks are compatibility studies of SiC with Li breeder ceramics and the Be neutron multiplier. Isothermal and anisothermal powder reactions by DTA up to 1220°C were examined between Li 4SiO 4, Li 2ZrO 3 and Li 2TiO 3, respectively, and SiC and SiC/SiO 2 mixtures, respectively. The SiC/SiO 2 mixture simulated the chemical state of Nicalon fibres. Solid state reactions between SiC and Be pellets were studied by capsule experiments. The reaction products Be 2C and Si were observed between the initial phases after annealing at 800°C and 900°C. A parabolic time law with a chemical diffusion coefficient D˜=2.6×10 -15 m 2/s of Be in the products was deduced at 900°C. Additional oxygen released from SiO 2 as a component of the simulated fibres oxidised the reaction products via the gas phase by formation of a Be 2SiO 4 layer. All reactions are kinetically hindered below 700°C.

  16. Spontaneous mutations in Streptococcus pyogenes isolates from streptococcal toxic shock syndrome patients play roles in virulence

    PubMed Central

    Ikebe, Tadayoshi; Matsumura, Takayuki; Nihonmatsu, Hisako; Ohya, Hitomi; Okuno, Rumi; Mitsui, Chieko; Kawahara, Ryuji; Kameyama, Mitsuhiro; Sasaki, Mari; Shimada, Naomi; Ato, Manabu; Ohnishi, Makoto

    2016-01-01

    Streptococcus pyogenes (group A Streptococcus; GAS) is a widespread human pathogen and causes streptococcal toxic shock syndrome (STSS). STSS isolates have been previously shown to have high frequency mutations in the csrS/csrR (covS/covR) and/or rgg (ropB) genes, which are negative regulators of virulence. However, these mutations were found at somewhat low frequencies in emm1-genotyped isolates, the most prevalent STSS genotype. In this study, we sought to detect causal mutations of enhanced virulence in emm1 isolates lacking mutation(s) in the csrS/csrR and rgg genes. Three mutations associated with elevated virulence were found in the sic (a virulence gene) promoter, the csrR promoter, and the rocA gene (a csrR positive regulator). In vivo contribution of the sic promoter and rocA mutations to pathogenicity and lethality was confirmed in a GAS mouse model. Frequency of the sic promoter mutation was significantly higher in STSS emm1 isolates than in non-invasive STSS isolates; the rocA gene mutation frequency was not significantly different among STSS and non-STSS isolates. STSS emm1 isolates possessed a high frequency mutation in the sic promoter. Thus, this mutation may play a role in the dynamics of virulence and STSS pathogenesis. PMID:27349341

  17. Processes and applications of silicon carbide nanocomposite fibers

    NASA Astrophysics Data System (ADS)

    Shin, D. G.; Cho, K. Y.; Jin, E. J.; Riu, D. H.

    2011-10-01

    Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al2O3. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200°C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

  18. Spontaneous mutations in Streptococcus pyogenes isolates from streptococcal toxic shock syndrome patients play roles in virulence.

    PubMed

    Ikebe, Tadayoshi; Matsumura, Takayuki; Nihonmatsu, Hisako; Ohya, Hitomi; Okuno, Rumi; Mitsui, Chieko; Kawahara, Ryuji; Kameyama, Mitsuhiro; Sasaki, Mari; Shimada, Naomi; Ato, Manabu; Ohnishi, Makoto

    2016-06-28

    Streptococcus pyogenes (group A Streptococcus; GAS) is a widespread human pathogen and causes streptococcal toxic shock syndrome (STSS). STSS isolates have been previously shown to have high frequency mutations in the csrS/csrR (covS/covR) and/or rgg (ropB) genes, which are negative regulators of virulence. However, these mutations were found at somewhat low frequencies in emm1-genotyped isolates, the most prevalent STSS genotype. In this study, we sought to detect causal mutations of enhanced virulence in emm1 isolates lacking mutation(s) in the csrS/csrR and rgg genes. Three mutations associated with elevated virulence were found in the sic (a virulence gene) promoter, the csrR promoter, and the rocA gene (a csrR positive regulator). In vivo contribution of the sic promoter and rocA mutations to pathogenicity and lethality was confirmed in a GAS mouse model. Frequency of the sic promoter mutation was significantly higher in STSS emm1 isolates than in non-invasive STSS isolates; the rocA gene mutation frequency was not significantly different among STSS and non-STSS isolates. STSS emm1 isolates possessed a high frequency mutation in the sic promoter. Thus, this mutation may play a role in the dynamics of virulence and STSS pathogenesis.

  19. Creep deformation of grain boundary in a highly crystalline SiC fibre.

    PubMed

    Shibayama, Tamaki; Yoshida, Yutaka; Yano, Yasuhide; Takahashi, Heishichiro

    2003-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.

  20. CVD of SiC and AlN using cyclic organometallic precursors

    NASA Technical Reports Server (NTRS)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  1. High temperature ceramics for automobile gas turbines. Part 2: Development of ceramic components

    NASA Technical Reports Server (NTRS)

    Walzer, P.; Koehler, M.; Rottenkolber, P.

    1978-01-01

    The development of ceramic components for automobile gas turbine engines is described with attention given to the steady and unsteady thermal conditions the ceramics will experience, and their anti-corrosion and strain-resistant properties. The ceramics considered for use in the automobile turbines include hot-pressed Si3N4, reaction-sintered, isostatically pressed Si3N4, hot-pressed SiC, reaction-bonded SiC, and glass ceramics. Attention is given to the stress analysis of ceramic structures and the state of the art of ceramic structural technology is reviewed, emphasizing the use of ceramics for combustion chambers and ceramic shrouded turbomachinery (a fully ceramic impeller).

  2. Deliquification (SIC) of gas wells. Liberal District-Amoco Production Company

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Smalley, R. Jr.

    Various solutions are presented to the problem of deliquefying gas wells to achieve maximum ultimate recovery and avoid premature abandonment. Advantages and disadvantages of each method of deliquefication are discussed. The methods described include blowing up the casing, siphon strings (gas and liquids up tubing, or gas up casing-tubing annulus, and liquids up tubing), gas cycling, compression, bottomhole separators, plunger lift, and sucker rod pumping.

  3. Study of silicon carbide formation by liquid silicon infiltration of porous carbon structures

    NASA Astrophysics Data System (ADS)

    Margiotta, Jesse C.

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making fully dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure followed by conversion of this carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low reactivity and porosity, and cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose:resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800°C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm-3 (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process were studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Such knowledge can be used to further refine the LSI technique. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. Thus, SiC made by our LSI process is an ideally suited material for use in high temperature heat exchanger applications. Electron probe microanalysis (EPMA) and Auger electron spectroscopy (AES) were used to study the chemical composition of LSI SiC materials. Optimized low voltage microanalysis conditions for EPMA of SiC were theoretically determined. EPMA and AES measurements indicate that the SiC phase in our materials is slightly carbon rich. Carbon contamination was identified as a possible source of error during EPMA of SiC, and this error was corrected by using high purity SiC standards. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp 2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin.

  4. DOE Office of Scientific and Technical Information (OSTI.GOV)

    I. J. van Rooyen; E. Olivier; J. H Neethlin

    Electron microscopy examinations of selected coated particles from the first advanced gas reactor experiment (AGR-1) at Idaho National Laboratory (INL) provided important information on fission product distribution and chemical composition. Furthermore, recent research using STEM analysis led to the discovery of Ag at SiC grain boundaries and triple junctions. As these Ag precipitates were nano-sized, high resolution transmission electron microscopy (HRTEM) examination was used to provide more information at the atomic level. This paper describes some of the first HRTEM results obtained by examining a particle from Compact 4-1-1, which was irradiated to an average burnup of 19.26% fissions permore » initial metal atom (FIMA), a time average, volume-averaged temperature of 1072°C; a time average, peak temperature of 1182°C and an average fast fluence of 4.13 x 1021 n/cm2. Based on gamma analysis, it is estimated that this particle may have released as much as 10% of its available Ag-110m inventory during irradiation. The HRTEM investigation focused on Ag, Pd, Cd and U due to the interest in Ag transport mechanisms and possible correlation with Pd, Ag and U previously found. Additionally, Compact 4-1-1 contains fuel particles fabricated with a different fuel carrier gas composition and lower deposition temperatures for the SiC layer relative to the Baseline fabrication conditions, which are expected to reduce the concentration of SiC defects resulting from uranium dispersion. Pd, Ag, and Cd were found to co-exist in some of the SiC grain boundaries and triple junctions whilst U was found to be present in the micron-sized precipitates as well as separately in selected areas at grain boundaries. This study confirmed the presence of Pd both at inter- and intragranular positions; in the latter case specifically at stacking faults. Small Pd nodules were observed at a distance of about 6.5 micron from the inner PyC/SiC interface.« less

  5. High-Performance SiC/SiC Ceramic Composite Systems Developed for 1315 C (2400 F) Engine Components

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.; Yun, Hee Mann; Morscher, Gregory N.; Bhatt, Ramakrishna T.

    2004-01-01

    As structural materials for hot-section components in advanced aerospace and land-based gas turbine engines, silicon carbide (SiC) ceramic matrix composites reinforced by high performance SiC fibers offer a variety of performance advantages over current bill-of-materials, such as nickel-based superalloys. These advantages are based on the SiC/SiC composites displaying higher temperature capability for a given structural load, lower density (approximately 30- to 50-percent metal density), and lower thermal expansion. These properties should, in turn, result in many important engine benefits, such as reduced component cooling air requirements, simpler component design, reduced support structure weight, improved fuel efficiency, reduced emissions, higher blade frequencies, reduced blade clearances, and higher thrust. Under the NASA Ultra-Efficient Engine Technology (UEET) Project, much progress has been made at the NASA Glenn Research Center in identifying and optimizing two highperformance SiC/SiC composite systems. The table compares typical properties of oxide/oxide panels and SiC/SiC panels formed by the random stacking of balanced 0 degrees/90 degrees fabric pieces reinforced by the indicated fiber types. The Glenn SiC/SiC systems A and B (shaded area of the table) were reinforced by the Sylramic-iBN SiC fiber, which was produced at Glenn by thermal treatment of the commercial Sylramic SiC fiber (Dow Corning, Midland, MI; ref. 2). The treatment process (1) removes boron from the Sylramic fiber, thereby improving fiber creep, rupture, and oxidation resistance and (2) allows the boron to react with nitrogen to form a thin in situ grown BN coating on the fiber surface, thereby providing an oxidation-resistant buffer layer between contacting fibers in the fabric and the final composite. The fabric stacks for all SiC/SiC panels were provided to GE Power Systems Composites for chemical vapor infiltration of Glenn designed BN fiber coatings and conventional SiC matrices. Composite panels with system B were heat treated at Glenn, and the pores that remained open were filled by silicon melt infiltration (MI). Panels with system A and the other SiC/SiC systems were not heat treated, and remaining open pores in these systems were filled with SiC slurry and silicon MI.

  6. What Happens when Sea Ice Retreats, Peatlands Form, and a Landbridge Drowns? A Molecular View of the Last Deglacial from the Pacific-Arctic Gateway

    NASA Astrophysics Data System (ADS)

    Kocis, J. J.; Petsch, S.; Castañeda, I. S.; Brigham-Grette, J.

    2014-12-01

    Arctic peatlands and thermokarst lakes (TK) are thought to play a significant role in changing atmospheric methane concentration (AMC) during the last deglacial. However, there is debate concerning timing of their initiation and extent they drove variations in AMC. Models show sea ice cover (SIC) and sea surface temperatures (SSTs) can also play a significant role. Yet, changes in peatland/TK lake areal extent in response to those dynamics as continental shelves were submerged are often not considered. To examine such connections, we report on molecular proxies in marine records that reveal change in terrestrial organic matter (TOM) export, SIC, and SSTs as sea levels rose during the last 18 ka in the Pacific-Arctic Gateway. Here, TOM input to the ocean was tracked by measuring the flux of branched glycerol dialkyl glycerol tetraethers, n-alkyl lipids, and pentacyclic triterpenoids. SIC and SSTs were reconstructed using modern calibrations of highly branched isoprenoid alkene abundances in surface sediments from the Bering and Chukchi Seas. SSTs were also reconstructed based on the relative abundance of isoprenoid glycerol dialkyl glycerol tetraethers. Our sediment records reveal increased flux of TOM coincides with peatland/TK lake initiation, reduced SIC (~20%), and warmer SSTs (~4°C) as AMC increased during the Bølling-Allerød (BA). Terrestrial flux dramatically reduced as SIC increased (~50%) and SSTs cooled as AMC fell during the Younger Dryas. Most notably, TOM export rapidly rebounds as AMC abruptly rose throughout the Holocene Thermal Maximum (HTM), when SSTs warmed by ~3°C and SIC diminished and peatland areal extent increased. Using multi-proxy evidence in combination with a simple model that accounts for submergence of peatland/TK lake area, we estimate that the exposed Beringian shelf emitted an amount of CH4 comparable to previously reported peatland emissions in Alaska during the BA and HTM. The GDGT-based methane index (MI) was <0.3 throughout our sediment records, suggesting destabilized marine gas hydrates were not the principal source of methane. Results of our study provide novel marine-based evidence for the timing of peatland and TK lake initiation and the role sea ice played in contributing to variations in AMC during deglacial sea level rise in the Arctic.

  7. Pressure effects on the thermal stability of SiC fibers

    NASA Technical Reports Server (NTRS)

    Jaskowiak, Martha H.; Dicarlo, James A.

    1986-01-01

    Commercially available polymer derived SiC fibers were treated at temperatures from 1000 to 2200 C in vacuum and argon gas pressure of 1 and 1360 atm. Effects of gas pressure on the thermal stability of the fibers were determined through property comparison between the pressure treated fibers and vacuum treated fibers. Investigation of the thermal stability included studies of the fiber microstructure, weight loss, grain growth, and tensile strength. The 1360 atm argon gas treatment was found to shift the onset of fiber weight loss from 1200 to above 1500 C. Grain growth and tensile strength degradation were correlated with weight loss and were thus also inhibited by high pressure treatments. Additional heat treatment in 1 atm argon of the fibers initially treated at 1360 atm argon caused further weight loss and tensile strength degradation, thus indicating that high pressure inert gas conditions would be effective only in delaying fiber strength degradation. However, if the high gas pressure could be maintained throughout composite fabrication, then the composites could be processed at higher temperatures.

  8. Pellet cladding mechanical interactions of ceramic claddings fuels under light water reactor conditions

    NASA Astrophysics Data System (ADS)

    Li, Bo-Shiuan

    Ceramic materials such as silicon carbide (SiC) are promising candidate materials for nuclear fuel cladding and are of interest as part of a potential accident tolerant fuel design due to its high temperature strength, dimensional stability under irradiation, corrosion resistance, and lower neutron absorption cross-section. It also offers drastically lower hydrogen generation in loss of coolant accidents such as that experienced at Fukushima. With the implementation of SiC material properties to the fuel performance code, FRAPCON, performances of the SiC-clad fuel are compared with the conventional Zircaloy-clad fuel. Due to negligible creep and high stiffness, SiC-clad fuel allows gap closure at higher burnup and insignificant cladding dimensional change. However, severe degradation of SiC thermal conductivity with neutron irradiation will lead to higher fuel temperature with larger fission gas release. High stiffness of SiC has a drawback of accumulating large interfacial pressure upon pellet-cladding mechanical interactions (PCMI). This large stress will eventually reach the flexural strength of SiC, causing failure of SiC cladding instantly in a brittle manner instead of the graceful failure of ductile metallic cladding. The large interfacial pressure causes phenomena that were previously of only marginal significance and thus ignored (such as creep of the fuel) to now have an important role in PCMI. Consideration of the fuel pellet creep and elastic deformation in PCMI models in FRAPCON provide for an improved understanding of the magnitude of accumulated interfacial pressure. Outward swelling of the pellet is retarded by the inward irradiation-induced creep, which then reduces the rate of interfacial pressure buildup. Effect of PCMI can also be reduced and by increasing gap width and cladding thickness. However, increasing gap width and cladding thickness also increases the overall thermal resistance which leads to higher fuel temperature and larger fission gas release. An optimum design is sought considering both thermal and mechanical models of this ceramic cladding with UO2 and advanced high density fuels.

  9. Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn M.

    2000-01-01

    Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

  10. QM and QM/MM Studies on Excited-State Relaxation Mechanisms of Unnatural Bases in Vacuo and Base Pairs in DNA.

    PubMed

    Wang, Qian; Xie, Xiao-Ying; Han, Juan; Cui, Ganglong

    2017-11-22

    Semisynthetic alphabet can potentially increase the genetic information stored in DNA through the formation of unusual base pairs such as d5SICS:dNaM. However, recent experiments show that near-visible-light irradiation on the d5SICS and dNaM chromophores could lead to genetic mutations and damages. Until now, their photophysical mechanisms remain elusive. Herein, we have employed MS-CASPT2//CASSCF and QM(MS-CASPT2//CASSCF)/MM methods to explore the spectroscopic properties and excited-state relaxation mechanisms of d5SICS, dNaM, and d5SICS:dNaM in DNA. We have found that (1) the S 2 state of d5SICS, the S 1 state of dNaM, and the S 2 state of d5SICS:dNaM are initially populated upon near-visible-light irradiation and (2) for d5SICS and d5SICS:dNaM, there are several parallel relaxation pathways to populate the lowest triplet state, but for dNaM, a main relaxation pathway is uncovered. Moreover, we have found that the excited-state relaxation mechanism of d5SICS:dNaM in DNA is similar to that of the isolated d5SICS chromophore. These mechanistic insights contribute to the understanding of photophysics and photochemistry of unusual base pairs and to the design of better semisynthetic genetic alphabet.

  11. Initial results from safety testing of US AGR-2 irradiation test fuel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Morris, Robert Noel; Hunn, John D.; Baldwin, Charles A.

    Two cylindrical compacts containing tristructural isotropic (TRISO)-coated particles with kernels that contained a mixture of uranium carbide and uranium oxide (UCO) and two compacts with UO 2-kernel TRISO particles have undergone 1600°C safety testing. These compacts were irradiated in the US Advanced Gas Reactor Fuel Development and Qualification Program's second irradiation test (AGR-2). The time-dependent releases of several radioisotopes ( 110mAg, 134Cs, 137Cs, 154Eu, 155Eu, 90Sr, and 85Kr) were monitored while heating the fuel specimens to 1600°C in flowing helium for 300 h. The UCO compacts behaved similarly to previously reported 1600°C-safety-tested UCO compacts from the AGR-1 irradiation. No failedmore » TRISO or failed SiC were detected (based on krypton and cesium release), and cesium release through intact SiC was very low. Release behavior of silver, europium, and strontium appeared to be dominated by inventory originally released through intact coating layers during irradiation but retained in the compact matrix until it was released during safety testing. Both UO 2 compacts exhibited cesium release from multiple particles whose SiC failed during the safety test. Europium and strontium release from these two UO 2 compacts appeared to be dominated by release from the particles with failed SiC. Silver release was characteristically like the release from the UCO compacts in that an initial release of the majority of silver trapped in the matrix occurred during ramping to 1600°C. However, additional silver release was observed later in the safety testing due to the UO 2 TRISO with failed SiC. Failure of the SiC layer in the UO 2 fuel appears to have been dominated by CO corrosion, as opposed to the palladium degradation observed in AGR-1 UCO fuel.« less

  12. Initial results from safety testing of US AGR-2 irradiation test fuel

    DOE PAGES

    Morris, Robert Noel; Hunn, John D.; Baldwin, Charles A.; ...

    2017-08-18

    Two cylindrical compacts containing tristructural isotropic (TRISO)-coated particles with kernels that contained a mixture of uranium carbide and uranium oxide (UCO) and two compacts with UO 2-kernel TRISO particles have undergone 1600°C safety testing. These compacts were irradiated in the US Advanced Gas Reactor Fuel Development and Qualification Program's second irradiation test (AGR-2). The time-dependent releases of several radioisotopes ( 110mAg, 134Cs, 137Cs, 154Eu, 155Eu, 90Sr, and 85Kr) were monitored while heating the fuel specimens to 1600°C in flowing helium for 300 h. The UCO compacts behaved similarly to previously reported 1600°C-safety-tested UCO compacts from the AGR-1 irradiation. No failedmore » TRISO or failed SiC were detected (based on krypton and cesium release), and cesium release through intact SiC was very low. Release behavior of silver, europium, and strontium appeared to be dominated by inventory originally released through intact coating layers during irradiation but retained in the compact matrix until it was released during safety testing. Both UO 2 compacts exhibited cesium release from multiple particles whose SiC failed during the safety test. Europium and strontium release from these two UO 2 compacts appeared to be dominated by release from the particles with failed SiC. Silver release was characteristically like the release from the UCO compacts in that an initial release of the majority of silver trapped in the matrix occurred during ramping to 1600°C. However, additional silver release was observed later in the safety testing due to the UO 2 TRISO with failed SiC. Failure of the SiC layer in the UO 2 fuel appears to have been dominated by CO corrosion, as opposed to the palladium degradation observed in AGR-1 UCO fuel.« less

  13. IDENTIFICATION OF AN {sup 84}Sr-DEPLETED CARRIER IN PRIMITIVE METEORITES AND IMPLICATIONS FOR THERMAL PROCESSING IN THE SOLAR PROTOPLANETARY DISK

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Paton, Chad; Schiller, Martin; Bizzarro, Martin, E-mail: chadpaton@gmail.com, E-mail: schiller@snm.ku.dk, E-mail: bizzarro@snm.ku.dk

    2013-02-01

    The existence of correlated nucleosynthetic heterogeneities in solar system reservoirs is now well demonstrated for numerous nuclides. However, it has proven difficult to discriminate between the two disparate processes that can explain such correlated variability: incomplete mixing of presolar material or secondary processing of a well-mixed disk. Using stepwise acid-leaching of the Ivuna CI-chondrite, we show that unlike other nuclides such as {sup 54}Cr and {sup 50}Ti, Sr-isotope variability is the result of a carrier depleted in {sup 84}Sr. The carrier is most likely presolar SiC, which is known to have both high Sr-concentrations relative to solar abundances and extremelymore » depleted {sup 84}Sr compositions. Thus, variability in {sup 84}Sr in meteorites and their components can be attributed to varying contributions from presolar SiC. The observed {sup 84}Sr excesses in calcium-aluminum refractory inclusions (CAIs) suggest their formation from an SiC-free gaseous reservoir, whereas the {sup 84}Sr depletions present in differentiated meteorites require their formation from material with an increased concentration of SiC relative to CI chondrites. The presence of a positive correlation between {sup 84}Sr and {sup 54}Cr, despite being hosted in carriers of negative and positive anomalies, respectively, is not compatible with incomplete mixing of presolar material but instead suggests that the solar system's nucleosynthetic heterogeneity reflects selective thermal processing of dust. Based on vaporization experiments of SiC under nebular conditions, the lack of SiC material in the CAI-forming gas inferred from our data requires that the duration of thermal processing of dust resulting in the vaporization of CAI precursors was extremely short-lived, possibly lasting only hours to days.« less

  14. Potential of Glassy Carbon and Silicon Carbide Photonic Structures as Electromagnetic Radiation Shields for Atmospheric Re-entry

    NASA Technical Reports Server (NTRS)

    Komarevskiy,Nikolay; Shklover, Valery; Braginsky, Leonid; Hafner, Christian; Lawson, John W.

    2012-01-01

    During high-velocity atmospheric entries, space vehicles can be exposed to strong electromagnetic radiation from ionized gas in the shock layer. Glassy carbon (GC) and silicon carbide (SiC) are candidate thermal protection materials due to their high melting point and also their good thermal and mechanical properties. Based on data from shock tube experiments, a significant fraction of radiation at hypersonic entry conditions is in the frequency range from 215 to 415 THz. We propose and analyze SiC and GC photonic structures to increase the reflection of radiation in that range. For this purpose, we performed numerical optimizations of various structures using an evolutionary strategy. Among the considered structures are layered, porous, woodpile, inverse opal and guided-mode resonance structures. In order to estimate the impact of fabrication inaccuracies, the sensitivity of the reflectivity to structural imperfections is analyzed. We estimate that the reflectivity of GC photonic structures is limited to 38% in the aforementioned range, due to material absorption. However, GC material can be effective for photonic reflection of individual, strong spectral line. SiC on the other hand can be used to design a good reflector for the entire frequency range.

  15. Potential of glassy carbon and silicon carbide photonic structures as electromagnetic radiation shields for atmospheric re-entry.

    PubMed

    Komarevskiy, Nikolay; Shklover, Valery; Braginsky, Leonid; Hafner, Christian; Lawson, John

    2012-06-18

    During high-velocity atmospheric entries, space vehicles can be exposed to strong electromagnetic radiation from ionized gas in the shock layer. Glassy carbon (GC) and silicon carbide (SiC) are candidate thermal protection materials due to their high melting point and also their good thermal and mechanical properties. Based on data from shock tube experiments, a significant fraction of radiation at hypersonic entry conditions is in the frequency range from 215 to 415 THz. We propose and analyze SiC and GC photonic structures to increase the reflection of radiation in that range. For this purpose, we performed numerical optimizations of various structures using an evolutionary strategy. Among the considered structures are layered, porous, woodpile, inverse opal and guided-mode resonance structures. In order to estimate the impact of fabrication inaccuracies, the sensitivity of the reflectivity to structural imperfections is analyzed. We estimate that the reflectivity of GC photonic structures is limited to 38% in the aforementioned range, due to material absorption. However, GC material can be effective for photonic reflection of individual, strong spectral line. SiC on the other hand can be used to design a good reflector for the entire frequency range.

  16. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru; Latukhina, N. V.; Chepurnov, V. I.

    Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

  17. InP-based photonic integrated circuit platform on SiC wafer.

    PubMed

    Takenaka, Mitsuru; Takagi, Shinichi

    2017-11-27

    We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

  18. The Oxidation of CVD Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynchGiao N.

    1997-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

  19. Preparation and Properties of New Inorganic Glasses and Gel-Derived Solids

    DTIC Science & Technology

    1991-04-01

    route were examined, including the use of SiC and diamond powder as fillers and some triphasic , solids. Many ferroelectnic thin films were prepared...use of SiC and diamond powder as fillers and some triphasic solids. Many ferroelectric thin films were prepared and their properties measured. An...Exit Filter Mmrn Holder Filter He Gas Perforated Pyrolysis Reactor 00 0 00 00 00 00 0 0 0 0 Soutolution asWe Fi.8.Shmai darm fepeiena0yses I I I ci

  20. Corrosion Issues for Ceramics in Gas Turbines

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan; Opila, Elizabeth; Nickel, Klaus G.

    2004-01-01

    The requirements for hot-gas-path materials in gas turbine engines are demanding. These materials must maintain high strength and creep resistance in a particularly aggressive environment. A typical gas turbine environment involves high temperatures, rapid gas flow rates, high pressures, and a complex mixture of aggressive gases. Over the past forty years, a wealth of information on the behavior of ceramic materials in heat engine environments has been obtained. In the first part of the talk we summarize the behavior of monolithic SiC and Si3N4. These materials show excellent baseline behavior in clean, oxygen environments. However the aggressive components in a heat engine environment such as water vapor and salt deposits can be quite degrading. In the second part of the talk we discuss SiC-based composites. The critical issue with these materials is oxidation of the fiber coating. We conclude with a brief discussion of future directions in ceramic corrosion research.

  1. Rare earth element abundances in presolar SiC

    NASA Astrophysics Data System (ADS)

    Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

    2018-01-01

    Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

  2. Synthesis and characterization of SiC based composite materials for immobilizing radioactive graphite

    NASA Astrophysics Data System (ADS)

    Wang, Qing; Teng, Yuancheng; Wu, Lang; Zhang, Kuibao; Zhao, Xiaofeng; Hu, Zhuang

    2018-06-01

    In order to immobilize high-level radioactive graphite, silicon carbide based composite materials{ (1-x) SiC· x MgAl2O4 (0.1 ≤ x≤0.4) } were fabricated by solid-state reaction at 1370 °C for 2 h in vacuum. Residual graphite and precipitated corundum were observed in the as-synthesized product, which attributed to the interface reaction of element silicon and magnesium compounds. To further understand the reasons for the presence of graphite and corundum, the effects of mole ratio of Si/C, MgAl2O4 content and non-stoichiometry of MgAl2O4 on the synthesis were investigated. To immobilize graphite better, residual graphite should be eliminated. The target product was obtained when the mole ratio of Si/C was 1.3:1, MgAl2O4 content was x = 0.2, and the mole ratio of Al to Mg in non-stoichiometric MgAl2O4 was 1.7:1. In addition, the interface reaction between magnesium compounds and silicon not graphite was displayed by conducting a series of comparative experiments. The key factor for the occurrence of interface reaction is that oxygen atom is transferred from magnesium compound to SiO gas. Infrared and Raman spectrum revealed the increased disorders of graphite after being synthesized.

  3. SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

    NASA Astrophysics Data System (ADS)

    Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

    2014-08-01

    The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

  4. Silicon carbide optics for space and ground based astronomical telescopes

    NASA Astrophysics Data System (ADS)

    Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

    2012-09-01

    Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

  5. CVD of silicon carbide on structural fibers - Microstructure and composition

    NASA Technical Reports Server (NTRS)

    Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

    1992-01-01

    Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

  6. CVD of silicon carbide on structural fibers: Microstructure and composition

    NASA Technical Reports Server (NTRS)

    Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

    1992-01-01

    Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

  7. Slow crack growth in SiC platelet reinforced Al{sub 2}O{sub 3} composite

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Belmonte, M.; Moya, J.S.; Miranzo, P.

    1996-05-15

    Ceramic matrix composites with enhanced toughness are at present projected for many structural applications such as high temperature components in gas turbine, structures for hypersonic aircraft and bioprosthetic devices. The incorporation of a SiC dispersed second phase in form of whisker or platelets into an alumina matrix has allowed to improve material toughness, thermal shock resistance and R-curve behavior. Recently, considerable interest in the acquisition of slow crack growth (SCG) data for ceramic materials has arisen in order to predict the service lifetime of brittle components. Non-oxide ceramics such as SiC and Si{sub 3}N{sub 4} are extremely resistant to crackmore » growth at low temperatures, whereas oxide ceramics are susceptible to stress corrosion because of the chemical interaction between water and stressed cracks. Up to date, there are not many papers devoted to SCG of SiC whiskers reinforced Al{sub 2}O{sub 3} composites and none about SiC platelets used as reinforcement. The objective of the present work has been to evaluate the slow crack growth in a Al{sub 2}O{sub 3}/SiC-platelet composite by double torsion testing analysis. The results will be compared with those obtained for SiC whisker reinforced Al{sub 2}O{sub 3} composite tested using the same conditions.« less

  8. Cs and Ag co-incorporation in cubic silicon carbide

    NASA Astrophysics Data System (ADS)

    Londono-Hurtado, Alejandro; Heim, Andrew J.; Kim, Sungtae; Szlufarska, Izabela; Morgan, Dane

    2013-08-01

    Understanding the diffusion of fission products Cs and Ag through the SiC layer of TRISO particles is of particular interest for the progress and improvement of the High Temperature Gas Reactor (HTGR) technologies. Although the SiC layer acts as a barrier for fission products, there is experimental evidence of Cs and Ag diffusion through this layer. Previous considerations of Ag and Cs in SiC have focused on the element interacting with SiC, but have not considered the possibility of co-incorporation with another species. This paper presents a ab initio study on the co-incorporation of Cs and Ag with an anion (Iodine (I) or Oxygen (O)) into SiC as an alternative incorporation mechanism. It is found that for crystalline SiC, Ag co-incorporation with Iodine (I) and Oxygen (O) into SiC is not energetically favorable, while Cs co-incorporation with O is a preferred mechanism under some oxygen partial pressures of interest. However, Cs-O co-incorporation into the crystalline portion of SiC is not sufficiently strong to enable a Cs solubility that accounts for the Cs release observed in some experiments. Formation energies are a function of the chemical potential of Si and C. Calculations in this paper are performed for Si-rich and C-rich conditions, which constitute the boundaries for which the formation energies are allowed to vary. Calculation of the electronic potential shift is required in order to ensure that the Fermi level in a defected cell is defined with respect to the same valence band level in the undefected cell [21,23]. The potential shift is calculated by aligning low energy levels in the total density of states (DOS) [24]. Spurious interactions between images of the charged defects make it necessary to correct for unphysical electrostatic interactions. Both the monopole-monopole and monopole-quadrupole Makov Payne corrections are used for this purpose. However, strain and incompletely corrected electrostatic interactions can still lead to significant finite size effects [25]. Based on finite size scaling studies of our largest charged cluster (CsC-OC-2VSi)4-, we estimate these effects lead to errors on the scale of 1.9 eV. Due to the fact that DFT formalism is unable to reproduce experimental band gaps in materials, underestimation of the band gap is expected. This can have an effect on the calculation of the charged defect formation energies. Therefore, the energetics and charge states of the defects must be treated as somewhat approximate. In this work, the value of the Fermi level is taken to be at the conduction band minimum, a choice that is consistent with an n-type material. This is justified by the fact that as-prepared SiC is generally n-type, with a low concentration of electron carriers [26-29]. It is also important to note that, even if SiC had an intrinsically lower Fermi level, under irradiation conditions long lived electronic excitations might provide effectively higher Fermi levels in the system. Irradiation induced defects such as vacancies and interstitials have been reported to lead to Fermi levels at the middle of the band gap [30,31]. For the case of negatively charged defects, having a Fermi level closer to the middle of the band gap will result in lower defect formation energies. This aspect is not critical for our study since our goal is not to calculate highly accurate formation energies or defect charge states but to compare these energies to identify qualitative trends of co-incorporate for the different defect clusters. Based on the above comments, results presented in this paper can be expected to have some quantitative inaccuracies but the conclusions drawn from these results are still of qualitative value. Furthermore, as will be shown in the result section, formation energy differences between competing energy clusters are above 1 eV for most cases. The main goals of this work are to identify whether Cs and Ag co-incorporation with O and I into SiC can lead to more stable defects than those calculated for simple Cs and Ag defect clusters in SiC and to identify the most stable Cs/Ag-O-V defect clusters in SiC. Although some error will be associated with the formation energies due the limitations discussed above, these do not undermine the qualitative objectives of this work.Oxygen and Iodine chemical potential: In order to calculate the formation energies for Cs/Ag-O defect clusters, it is necessary to define the reference states that will be used in Eq. (1). We make the approximation that the reference for Cs and Ag is their pure metal form. The reference cancels from all comparisons between direct and co-incorporation and therefore only plays a role when considering formation energies for estimating solubility. These reference states can be justified as a bounding case for solubility calculations since it can be argued that if Ag and Cs are not in metal form in the TRISO particle, it is because they are in a more stable state. Therefore, by choosing the metal form of Cs and Ag as the reference, formation energies can be viewed as an upper bound of their chemical potential. As a consequence, formation energies calculated using this reference provide the lower bound for the true formation energy (i.e., the true formation energy would be more positive, leading to lower solubility) [11]. For the anions O and I we use the gas phase O2 and I2 molecules as the reference states, which are calculated as follows:The chemical potential of O is calculated as proposed by Lee et al. [32]: μ={1}/{2}EOVASP+ΔhO0+[H(T,P0)-H(T0,P0)]-TS(T,P0)+kTln(P/P0) where EOVASP is the T = 0 K energy as obtained from the DFT calculations, ΔhO0 is the correction for errors of the oxygen energy in O2 molecules vs. a solid, H is the O2 gas enthalpy, S is the O2 gas entropy, P is the oxygen partial pressure (P0 = 1 atm), T is the temperature (T0 = 298.15 K), and k is the Boltzman constant. The term [H(T,P0)-H(T0,P0)]-TS(T,P0) constitutes the free energy per O of O2 gas relative to the gas enthalpy at P = P0 and T = T0. This term is evaluated based on experimental data from Ref. [33]. Eqs. (1) and (2) are employed to calculate the defect formation energies of oxygen co-incorporation with Cs and Ag into SiC as a function of partial pressure. This approach treats the enthalpy at P0 and T0 as equal to the VASP energy at T = 0 K and further, does not include vibrational terms in the adsorbed species that will be contributing to the gas phase. However, we believe that the contributions of these terms to the chemical potential are small enough for the systems used in our analysis that leaving it out of the model is consistent with the qualitative goals of this work.An analogous approach can be used to treat I2, which gives the relations: μI={1}/{2}EIVASP+ΔhI0+[H(T,P0)-H(T0,P0)]-TS(T,P0)+kTln(P/P0) where EIVASP is the T = 0 K energy as obtained from the DFT calculations, ΔhI0 is the correction for errors of the oxygen energy in I2 molecules vs. a solid, H is the I2 gas enthalpy, S and is the I2 gas entropy. However, we will use a simplified reference for the I chemical potential, which can be justified as follows. It is observed from Eq. (3) that the overall effect of enthalpy and entropy is to decrease the absolute value of the I2 chemical potential for any reasonable P and T that might be encountered under reactor conditions. Furthermore, we will assume that HI2 is small on the scale of the co-incorporation energies (see below), and does not have a significant impact on the overall energetics. With this approximation we see that by choosing the EIVASP as our reference, we are calculating the upper bound of the true formation energy. As will be presented in Section 3, formation energies calculated for the case Ag/Cs-I co-incorporation using the isolated I2 molecule in vacuum at 0 K as the reference state were found to be 5.6 eV or higher than the most stable incorporation defect. While this result does not correct for possible enthalpy errors (the ΔhI0 term), the term accounting for entalphy errors is very unlikely to be on the scale of a few eV. Therefore, we see that even with an upper bound of the chemical potential for I, we can rule out I co-incorporation. As a consequence, we simply take the chemical potential of I to be {1}/{2}EIVASP, and no further refining of the chemical potential was pursued using Eq. (3).

  9. Oxidation of ZrB2-and HfB2-Based Ultra-High Temperature Ceramics: Effects of Ta Additions

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth; Levine, Stanley; Lorinez, Jonathan

    2003-01-01

    Several compositions of ZrB2- and HfB2-based Ultra-High Temperature Ceramics (UHTC) were oxidized in stagnant air at 1627 C in ten minute cycles for times up to 100 minutes. These compositions include: ZrB2 - 20v% SiC, HfB2 - 20v% SiC, ZrB2 - 20v% SiC - 20v% TaSi2, ZrB2 - 33v% SiC, HfB2 - 20v% SiC - 20v% TaSi2, and ZrB2 - 20v% SiC - 20v% TaC. The weight change due to oxidation was recorded. The ZrB2 - 20v% SiC - 20v% TaSi2 composition was also oxidized in stagnant air at 1927 C and in an arc jet atmosphere. Samples were analyzed after oxidation by x-ray diffraction, field emission scanning electron microscopy, and energy dispersive spectroscopy to determine the reaction products and to observe the microstructure. The ZrB2 - 20v% SiC - 20v% TaSi2 showed the lowest oxidation rate at 1627 C, but performed poorly under the more extreme tests due to liquid phase formation. Effects of Ta-additions on the oxidation of the diboride-based UHTC are discussed.

  10. An Extension of SIC Predictions to the Wiener Coactive Model

    PubMed Central

    Houpt, Joseph W.; Townsend, James T.

    2011-01-01

    The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form. PMID:21822333

  11. An Extension of SIC Predictions to the Wiener Coactive Model.

    PubMed

    Houpt, Joseph W; Townsend, James T

    2011-06-01

    The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

  12. Corrosion of SiC by Molten Salt

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Smialek, James L.

    1987-01-01

    Advanced ceramic materials considered for wide range of applications as in gas turbine engines and heat exchangers. In such applications, materials may be in corrosive environments that include molten salts. Very corrosive to alloys. In order to determine extent of problem for ceramic materials, corrosion of SiC by molten salts studied in both jet fuel burners and laboratory furnaces. Surface of silicon carbide corroded by exposure to flame seeded with 4 parts per million of sodium. Strength of silicon carbide decreased by corrosion in flame and tube-furnace tests.

  13. Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynhGiao N.

    1998-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

  14. Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

    NASA Astrophysics Data System (ADS)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

    2014-10-01

    Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

  15. Plasma-Sprayed Refractory Oxide Coatings on Silicon-Base Ceramics

    NASA Technical Reports Server (NTRS)

    Tewari, Surendra

    1997-01-01

    Silicon-base ceramics are promising candidate materials for high temperature structural applications such as heat exchangers, gas turbines and advanced internal combustion engines. Composites based on these materials are leading candidates for combustor materials for HSCT gas turbine engines. These materials possess a combination of excellent physical and mechanical properties at high temperatures, for example, high strength, high toughness, high thermal shock resistance, high thermal conductivity, light weight and excellent oxidation resistance. However, environmental durability can be significantly reduced in certain conditions such as when molten salts, H2 or water vapor are present. The oxidation resistance of silicon-base materials is provided by SiO2 protective layer. Molten salt reacts with SiO2 and forms a mixture of SiO2 and liquid silicate at temperatures above 800C. Oxygen diffuses more easily through the chemically altered layer, resulting in a catastrophic degradation of the substrate. SiC and Si3N4 are not stable in pure H2 and decompose to silicon and gaseous species such as CH4, SiH, SiH4, N2, and NH3. Water vapor is known to slightly increase the oxidation rate of SiC and Si3N4. Refractory oxides such as alumina, yttria-stabilized zirconia, yttria and mullite (3Al2O3.2SiO2) possess excellent environmental durability in harsh conditions mentioned above. Therefore, refractory oxide coatings on silicon-base ceramics can substantially improve the environmental durability of these materials by acting as a chemical reaction barrier. These oxide coatings can also serve as a thermal barrier. The purpose of this research program has been to develop refractory oxide chemical/thermal barrier coatings on silicon-base ceramics to provide extended temperature range and lifetime to these materials in harsh environments.

  16. Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Katoh, Yutai; Koyanagi, Takaaki; McDuffee, Joel L.

    Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. Here in this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber – SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combinedmore » effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.« less

  17. Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime

    DOE PAGES

    Katoh, Yutai; Koyanagi, Takaaki; McDuffee, Joel L.; ...

    2017-12-08

    Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. Here in this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber – SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combinedmore » effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.« less

  18. SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Robinson, Raymond C.; Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

    1999-01-01

    Silicon carbide (SiC) and Si3N4 materials were tested in various turbine engine combustion environments chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high-speed aircraft. Representative chemical vapor-deposited (CVD), sintered, and composite materials were evaluated by furnace and high-pressure burner rig exposures. Although protective SiO2 scales formed in all cases, the evidence presented supports a model based on paralinear growth kinetics (i.e., parabolic growth moderated simultaneously by linear volatilization). The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were thus used to map SiO2 volatility (and SiC recession) over a range of temperatures, pressures, and velocities. The functional dependency of material recession (volatility) that emerged followed the form A[exp(-Q / RT)](P(sup x)v(sup y). These empirical relations were compared with rates predicted from the thermodynamics of volatile SiO and SiOxHy reaction products and a kinetic model of diffusion through a moving boundary layer. For typical combustion conditions, recession of 0.2 to 2 micrometers/hr is predicted at 1200 to 1400 C, far in excess of acceptable long-term limits.

  19. Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

    NASA Astrophysics Data System (ADS)

    Liu, Xin; Gao, Bing; Nakano, Satoshi; Kakimoto, Koichi

    2017-09-01

    Generation, incorporation, and accumulation of carbon (C) were investigated by transient global simulations of heat and mass transport during the melting process of Czochralski silicon (CZ-Si) crystal growth. Contact reaction between the quartz crucible and graphite susceptor was introduced as an extra origin of C contamination. The contribution of the contact reaction on C accumulation is affected by the back diffusion of C monoxide (CO) from the gap between the gas-guide and the crucible. The effect of the gas-guide coating on C reduction was elucidated by taking the reaction between the silicon carbide (SiC) coating and gaseous Si monoxide (SiO) into account. Application of the SiC coating on the gas-guide could effectively reduce the C contamination because of its higher thermochemical stability relative to that of graphite. Gas flow control on the back diffusion of the generated CO was examined by the parametric study of argon gas flow rate. Generation and back diffusion of CO were both effectively suppressed by the increase in the gas flow rate because of the high Péclet number of species transport. Strategies for C content reduction were discussed by analyzing the mechanisms of C accumulation process. According to the elucidated mechanisms of C accumulation, the final C content depends on the growth duration and contamination flux at the gas/melt interface.

  20. Optimal base station placement for wireless sensor networks with successive interference cancellation.

    PubMed

    Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

    2015-01-14

    We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC.

  1. Hydrogen gas sensors using a thin Ta2O5 dielectric film

    NASA Astrophysics Data System (ADS)

    Kim, Seongjeen

    2014-12-01

    A capacitive-type hydrogen gas sensor with a MIS (metal-insulator-semiconductor) structure was investigated for high-temperature applications. In this work, a tantalum oxide (Ta2O5) layer of tens of nanometers in thickness formed by oxidizing tantalum film in rapid thermal processing (RTP) was exploited with the purpose of sensitivity improvement. Silicon carbide (SiC), which is good even at high temperatures over 500 °C, was used as the substrate. We fabricated sensors composed of Pd/Ta2O5/SiC, and the dependences of the capacitance response properties and the I-V characteristics on the hydrogen concentration were analyzed from the temperature range of room temperature to 500 °C. As a result, our hydrogen sensor showed promising performance with respect to the sensitivity and the adaptability at high temperature.

  2. The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

    NASA Astrophysics Data System (ADS)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

    2015-11-01

    Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

  3. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

    PubMed Central

    de Heer, Walt A.; Berger, Claire; Ruan, Ming; Sprinkle, Mike; Li, Xuebin; Hu, Yike; Zhang, Baiqian; Hankinson, John; Conrad, Edward

    2011-01-01

    After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The Georgia Tech team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high-quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the “furnace grown” graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present for the first time the CCS method that outperforms other epitaxial graphene production methods. PMID:21960446

  4. Creep and Rupture Strength of an Advanced CVD SiC Fiber

    NASA Technical Reports Server (NTRS)

    Goldsby, J. C.; Yun, H. M.; DiCarlo, J. A.

    1997-01-01

    In the as-produced condition the room temperature strength (approx. 6 GPa) of Textron Specialty Materials' 50 microns CVD SiC fiber represents the highest value thus far obtained for commercially produced polycrystalline SiC fibers. To understand whether this strength can be maintained after composite processing conditions, high temperature studies were performed on the effects of time, stress, and environment on 1400 deg. C tensile creep strain and stress rupture on as-produced, chemically vapor deposited SiC fibers. Creep strain results were consistent, allowing an evaluation of time and stress effects. Test environment had no influence on creep strain but I hour annealing at 1600 deg. C in argon gas significantly reduced the total creep strain and increased the stress dependence. This is attributed to changes in the free carbon morphology and its distribution within the CVD SiC fiber. For the as-produced and annealed fibers, strength at 1400 deg. C was found to decrease from a fast fracture value of 2 GPa to a 100-hr rupture strength value of 0. 8 GPa. In addition a loss of fast fracture strength from 6 GPa is attributed to thermally induced changes in the outer carbon coating and microstructure. Scatter in rupture times made a definitive analysis of environmental and annealing effects on creep strength difficult.

  5. Dimension towers of SICs. I. Aligned SICs and embedded tight frames

    NASA Astrophysics Data System (ADS)

    Appleby, Marcus; Bengtsson, Ingemar; Dumitru, Irina; Flammia, Steven

    2017-11-01

    Algebraic number theory relates SIC-POVMs in dimension d > 3 to those in dimension d(d - 2). We define a SIC in dimension d(d - 2) to be aligned to a SIC in dimension d if and only if the squares of the overlap phases in dimension d appear as a subset of the overlap phases in dimension d(d - 2) in a specified way. We give 19 (mostly numerical) examples of aligned SICs. We conjecture that given any SIC in dimension d, there exists an aligned SIC in dimension d(d - 2). In all our examples, the aligned SIC has lower dimensional equiangular tight frames embedded in it. If d is odd so that a natural tensor product structure exists, we prove that the individual vectors in the aligned SIC have a very special entanglement structure, and the existence of the embedded tight frames follows as a theorem. If d - 2 is an odd prime number, we prove that a complete set of mutually unbiased bases can be obtained by reducing an aligned SIC to this dimension.

  6. Advanced fuels modeling: Evaluating the steady-state performance of carbide fuel in helium-cooled reactors using FRAPCON 3.4

    NASA Astrophysics Data System (ADS)

    Hallman, Luther, Jr.

    Uranium carbide (UC) has long been considered a potential alternative to uranium dioxide (UO2) fuel, especially in the context of Gen IV gas-cooled reactors. It has shown promise because of its high uranium density, good irradiation stability, and especially high thermal conductivity. Despite its many benefits, UC is known to swell at a rate twice that of UO2. However, the swelling phenomenon is not well understood, and we are limited to a weak empirical understanding of the swelling mechanism. One suggested cladding for UC is silicon carbide (SiC), a ceramic that demonstrates a number of desirable properties. Among them are an increased corrosion resistance, high mechanical strength, and irradiation stability. However, with increased temperatures, SiC exhibits an extremely brittle nature. The brittle behavior of SiC is not fully understood and thus it is unknown how SiC would respond to the added stress of a swelling UC fuel. To better understand the interaction between these advanced materials, each has been implemented into FRAPCON, the preferred fuel performance code of the Nuclear Regulatory Commission (NRC); additionally, the material properties for a helium coolant have been incorporated. The implementation of UC within FRAPCON required the development of material models that described not only the thermophysical properties of UC, such as thermal conductivity and thermal expansion, but also models for the swelling, densification, and fission gas release associated with the fuel's irradiation behavior. This research is intended to supplement ongoing analysis of the performance and behavior of uranium carbide and silicon carbide in a helium-cooled reactor.

  7. Statistical Analysis of SSMIS Sea Ice Concentration Threshold at the Arctic Sea Ice Edge during Summer Based on MODIS and Ship-Based Observational Data.

    PubMed

    Ji, Qing; Li, Fei; Pang, Xiaoping; Luo, Cong

    2018-04-05

    The threshold of sea ice concentration (SIC) is the basis for accurately calculating sea ice extent based on passive microwave (PM) remote sensing data. However, the PM SIC threshold at the sea ice edge used in previous studies and released sea ice products has not always been consistent. To explore the representable value of the PM SIC threshold corresponding on average to the position of the Arctic sea ice edge during summer in recent years, we extracted sea ice edge boundaries from the Moderate-resolution Imaging Spectroradiometer (MODIS) sea ice product (MOD29 with a spatial resolution of 1 km), MODIS images (250 m), and sea ice ship-based observation points (1 km) during the fifth (CHINARE-2012) and sixth (CHINARE-2014) Chinese National Arctic Research Expeditions, and made an overlay and comparison analysis with PM SIC derived from Special Sensor Microwave Imager Sounder (SSMIS, with a spatial resolution of 25 km) in the summer of 2012 and 2014. Results showed that the average SSMIS SIC threshold at the Arctic sea ice edge based on ice-water boundary lines extracted from MOD29 was 33%, which was higher than that of the commonly used 15% discriminant threshold. The average SIC threshold at sea ice edge based on ice-water boundary lines extracted by visual interpretation from four scenes of the MODIS image was 35% when compared to the average value of 36% from the MOD29 extracted ice edge pixels for the same days. The average SIC of 31% at the sea ice edge points extracted from ship-based observations also confirmed that choosing around 30% as the SIC threshold during summer is recommended for sea ice extent calculations based on SSMIS PM data. These results can provide a reference for further studying the variation of sea ice under the rapidly changing Arctic.

  8. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints

    NASA Astrophysics Data System (ADS)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

    2018-02-01

    The microcracking mechanisms responsible for Ti3SiC2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments are investigated in detail. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti3SiC2 and SiC phases. The behaviors of SiC and Ti3SiC2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504-515. This CDM model describes microcracking damage in brittle ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti3SiC2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti3SiC2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti3SiC2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. These predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.

  9. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

    PubMed

    Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Optimal Base Station Placement for Wireless Sensor Networks with Successive Interference Cancellation

    PubMed Central

    Shi, Lei; Zhang, Jianjun; Shi, Yi; Ding, Xu; Wei, Zhenchun

    2015-01-01

    We consider the base station placement problem for wireless sensor networks with successive interference cancellation (SIC) to improve throughput. We build a mathematical model for SIC. Although this model cannot be solved directly, it enables us to identify a necessary condition for SIC on distances from sensor nodes to the base station. Based on this relationship, we propose to divide the feasible region of the base station into small pieces and choose a point within each piece for base station placement. The point with the largest throughput is identified as the solution. The complexity of this algorithm is polynomial. Simulation results show that this algorithm can achieve about 25% improvement compared with the case that the base station is placed at the center of the network coverage area when using SIC. PMID:25594600

  11. Erosion and strength degradation of biomorphic SiC.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Martinez-Fernandez, J.; de Arellano-Lopez, A. R; Varela-Feria, F. M.

    2004-05-01

    Solid-particle-erosion studies were conducted on biomorphic SiC based on eucalyptus and pine, reaction-bonded (RB) SiC, and hot-pressed (HP) SiC. The erodents were angular SiC abrasives of average diameter 63, 143, or 390 {mu}m and the impact velocity was 100 m s{sup -1}. Impact occurred at normal incidence. Material loss in all targets occurred by brittle fracture. The biomorphic specimens eroded by formation of both lateral and radial cracks and their erosion rates were higher than both conventional SiCs. The RB SiC eroded as a classic brittle material, by formation and propagation of lateral cracks. The HP SiC, the hardest target,more » was the most erosion resistant. In erosion of the HP SiC, the abrasive particles, especially the largest ones, fragmented upon impact. The resulting dissipation of energy led to relatively low erosion rates. Flexural strength before and after erosion was measured for the biomorphic eucalyptus, RB SiC, and HP SiC. Erosion damage reduced the flexural strengths of all of the specimens. The relative strength reductions were lowest for the biomorphic eucalyptus and highest for the HP SiC. The hot-pressed SiC responded as predicted by accepted models of impact damage in brittle solids. The responses of the biomorphic and reaction-bonded SiC specimens were modeled as if they consisted of only SiC and porosity. This approximation agreed reasonably well with observed degradations of strength.« less

  12. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

  13. SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

    NASA Technical Reports Server (NTRS)

    Yan, Feng

    2006-01-01

    A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

  14. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

    We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

  15. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

    DOE PAGES

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

    2017-12-05

    We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

  16. Research and Development on Advanced Graphite Materials. Volume 34- Oxidation-Resistance Coatings for Graphite

    DTIC Science & Technology

    1963-06-01

    RESISTANCE COATINGS "FOR GRAPHITE TECHNICAL DOCUMENTARY REPORT NO. WADD TR 61-72, Volume XXXIV ELECT" June 1963 D-I’C a AUý 0 219940 -14 0u c 94Air Force... coating on\\ Ex.: C (substrate’) + SiC1 R. SiC + graphite, + 4HCI (gas) oo flush Z000C 2 277I I I Deposition of coatings by plasma spraying also has...materials to withstand high tem- peratures has led to the investigation of the plasma torch as a means for 3 depositing protective coatings

  17. The nanostructure and microstructure of SiC surface layers deposited by MWCVD and ECRCVD

    NASA Astrophysics Data System (ADS)

    Dul, K.; Jonas, S.; Handke, B.

    2017-12-01

    Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to investigate ex-situ the surface topography of SiC layers deposited on Si(100) by Microwave Chemical Vapour Deposition (MWCVD) -S1,S2 layers and Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) - layers S3,S4, using silane, methane, and hydrogen. The effects of sample temperature and gas flow on the nanostructure and microstructure have been investigated. The nanostructure was described by three-dimensional surface roughness analysis based on digital image processing, which gives a tool to quantify different aspects of surface features. A total of 13 different numerical parameters used to describe the surface topography were used. The scanning electron image (SEM) of the microstructure of layers S1, S2, and S4 was similar, however, layer S3 was completely different; appearing like grains. Nonetheless, it can be seen that no grain boundary structure is present in the AFM images.

  18. SiC Recession Due to SiO2 Scale Volatility Under Combustion Conditions. Part 2; Thermodynamics and Gaseous Diffusion Model

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Smialek, James L.; Robinson, Raymond C.; Fox, Dennis S.; Jacobson, Nathan S.

    1998-01-01

    In combustion environments, volatilization of SiO2 to Si-O-H(g) species is a critical issue. Available thermochemical data for Si-O-H(g) species were used to calculate boundary layer controlled fluxes from SiO2. Calculated fluxes were compared to volatilization rates Of SiO2 scales grown on SiC which were measured in Part 1 of this paper. Calculated volatilization rates were also compared to those measured in synthetic combustion gas furnace tests. Probable vapor species were identified in both fuel-lean and fuel-rich combustion environments based on the observed pressure, temperature and velocity dependencies as well as the magnitude of the volatility rate. Water vapor is responsible for the degradation of SiO2 in the fuel-lean environment. Silica volatility in fuel-lean combustion environments is attributed primarily to the formation of Si(OH)4(g) with a small contribution of SiO(OH)2(g).

  19. Discovery of SiCSi in IRC +10216: A missing link between gas and dust carriers of Si–C bonds

    PubMed Central

    Cernicharo, J.; McCarthy, M. C.; Gottlieb, C. A.; Agúndez, M.; Velilla Prieto, L.; Baraban, J. H.; Changala, P. B.; Guélin, M.; Kahane, C.; Martin-Drumel, M. A.; Patel, N. A.; Reilly, N. J.; Stanton, J. F.; Quintana-Lacaci, G.; Thorwirth, S.; Young, K. H.

    2015-01-01

    We report the discovery in space of a disilicon species, SiCSi, from observations between 80 and 350 GHz with the IRAM10 30m radio telescope. Owing to the close coordination between laboratory experiments and astrophysics, 112 lines have now been detected in the carbon-rich star CW Leo. The derived frequencies yield improved rotational and centrifugal distortion constants up to sixth order. From the line profiles and interferometric maps with the Submillimeter Array11, the bulk of the SiCSi emission arises from a region of 6″ in radius. The derived abundance is comparable to that of SiC2. As expected from chemical equilibrium calculations, SiCSi and SiC2 are the most abundant species harboring a Si–C bond in the dust formation zone and certainly both play a key role in the formation of SiC dust grains. PMID:26722621

  20. Effect of microstructure on the corrosion of CVD-SiC exposed to supercritical water

    NASA Astrophysics Data System (ADS)

    Tan, L.; Allen, T. R.; Barringer, E.

    2009-10-01

    Silicon carbide (SiC) is an important engineering material being studied for potential use in multiple nuclear energy systems including high-temperature gas-cooled reactors and water-cooled reactors. The corrosion behavior of SiC exposed to supercritical water (SCW) is critical for examining its applications in nuclear reactors. Although the hydrothermal corrosion of SiC has been the subject of many investigations, the study on the microstructural effects on the corrosion is limited. This paper presents the effect of residual strain, grain size, grain boundary types, and surface orientations on the corrosion of chemical vapor deposited (CVD) β-SiC exposed to SCW at 500 °C and 25 MPa. Weight loss occurred on all the samples due to localized corrosion. Residual strains associated with small grains showed the most significant effect on the corrosion compared to the other factors.

  1. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    PubMed Central

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-01-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

  2. Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbide

    NASA Technical Reports Server (NTRS)

    Prost, L.; Pauillac, A.

    1978-01-01

    Experience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.

  3. Miniature Gas-Turbine Power Generator

    NASA Technical Reports Server (NTRS)

    Wiberg, Dean; Vargo, Stephen; White, Victor; Shcheglov, Kirill

    2003-01-01

    A proposed microelectromechanical system (MEMS) containing a closed- Brayton-cycle turbine would serve as a prototype of electric-power generators for special applications in which high energy densities are required and in which, heretofore, batteries have been used. The system would have a volume of about 6 cm3 and would operate with a thermal efficiency >30 percent, generating up to 50 W of electrical power. The energy density of the proposed system would be about 10 times that of the best battery-based systems now available, and, as such, would be comparable to that of a fuel cell. The working gas for the turbine would be Xe containing small quantities of CO2, O2, and H2O as gaseous lubricants. The gas would be contained in an enclosed circulation system, within which the pressure would typically range between 5 and 50 atm (between 0.5 and 5 MPa). The heat for the Brayton cycle could be supplied by any of a number of sources, including a solar concentrator or a combustor burning a hydrocarbon or other fuel. The system would include novel heat-transfer and heat-management components. The turbine would be connected to an electric power generator/starter motor. The system would include a main rotor shaft with gas bearings; the bearing surfaces would be made of a ceramic material coated with nanocrystalline diamond. The shaft could withstand speed of 400,000 rpm or perhaps more, with bearing-wear rates less than 10(exp -)4 those of silicon bearings and 0.05 to 0.1 those of SiC bearings, and with a coefficient of friction about 0.1 that of Si or SiC bearings. The components of the system would be fabricated by a combination of (1) three-dimensional xray lithography and (2) highly precise injection molding of diamond-compatible metals and ceramic materials. The materials and fabrication techniques would be suitable for mass production. The disadvantages of the proposed system are that unlike a battery-based system, it could generate a perceptible amount of sound, and, if it were to burn fuel, then it would also generate exhaust, similarly to other combustion-based power sources.

  4. "Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

    NASA Technical Reports Server (NTRS)

    Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

    1998-01-01

    Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

  5. Preparation of SiC based Aluminium metal matrix nano composites by high intensity ultrasonic cavitation process and evaluation of mechanical and tribological properties

    NASA Astrophysics Data System (ADS)

    Murthy, N. V.; Prasad Reddy, A.; Selvaraj, N.; Rao, C. S. P.

    2016-09-01

    Request augments on a worldwide scale for the new materials. The metal matrix nano composites can be used in numerous applications of helicopter structural parts, gas turbine exit guide vane's, space shuttle, and other structural applications. The key mailman to ameliorate performance of composite matrix in aluminium alloy metal reinforces nano particles in the matrix of alloy uniformly, which ameliorates composite properties without affecting limit of ductility. The ultrasonic assisted stir casting helped agitation was successfully used to fabricate Al 2219 metal matrix of alloy reinforced with (0.5, 1, 1.5 and 2) wt.% of nano silicon carbide (SiC) particles of different sizes 50nm and 150nm. The micrographs of scanning electron microscopy of nano composite were investigated it reveals that the uniform dispersion of nano particles silicon carbide in aluminium alloy 2219 matrix and with the low porosity. How the specific wear rate was vary with increasing weight percentage of nano particles at constant load and speed as shown in results and discussions. And the mechanical properties showed that the ultimate tensile strength and hardness of metal matrix nano composite AA 2219 / nano SiC of 50nm and 150nm lean to augment with increase weight percentage of silicon carbide content in the matrix alloy.

  6. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

    NASA Astrophysics Data System (ADS)

    Lebedev, A. A.; Davydov, V. Y.; Usachov, D. Y.; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S.; Rybkin, A. G.; Novikov, S. N.; Makarov, Yu N.

    2018-01-01

    The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, X-ray photoelectron spectroscopy and angle-resolved photoemission. It was demonstrated the possibility of fabrication of the gas and biosensors that is based on grown graphene films. The gas sensors are sufficiently sensitive to NO2 at low concentrations. The biosensor operation was checked using an immunochemical system comprising fluorescein dye and monoclonal anti fluorescein antibodies. The sensor detects fluorescein concentration on a level of 1-10 ng/mL and bovine serum albumin- fluorescein conjugate on a level of 1-5 ng/mL. The proposed device has good prospects for use for early diagnostics of various diseases.

  7. Carbothermal transformation of a graphitic carbon nanofiber/silica aerogel composite to a SiC/silica nanocomposite.

    PubMed

    Lu, Weijie; Steigerwalt, Eve S; Moore, Joshua T; Sullivan, Lisa M; Collins, W Eugene; Lukehart, C M

    2004-09-01

    Carbon nanofiber/silica aerogel composites are prepared by sol-gel processing of surface-enhanced herringbone graphitic carbon nanofibers (GCNF) and Si(OMe)4, followed by supercritical CO2 drying. Heating the resulting GCNF/silica aerogel composites to 1650 degrees C under a partial pressure of Ar gas initiates carbothermal reaction between the silica aerogel matrix and the carbon nanofiber component to form SiC/silica nanocomposites. The SiC phase is present as nearly spherical nanoparticles, having an average diameter of ca. 8 nm. Formation of SiC is confirmed by powder XRD and by Raman spectroscopy.

  8. Overview of Silicon Carbide Technology: Device, Converter, System, and Application

    DOE PAGES

    Wang, Fei; Zhang, Zheyu

    2016-12-28

    This article overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed.

  9. Lightweight composite reflectors for space optics

    NASA Astrophysics Data System (ADS)

    Williams, Brian E.; McNeal, Shawn R.; Ono, Russell M.

    1998-01-01

    The primary goal of this work was to advance the state of the art in lightweight, high optical quality reflectors for space- and Earth-based telescopes. This was accomplished through the combination of a precision silicon carbide (SiC) reflector surface and a high specific strength, low-mass SiC structural support. Reducing the mass of components launched into space can lead to substantial cost savings, but an even greater benefit of lightweight reflectors for both space- and Earth-based optics applications is the fact that they require far less complex and less expensive positioning systems. While Ultramet is not the first company to produce SiC by chemical vapor deposition (CVD) for reflector surfaces, it is the first to propose and demonstrate a lightweight, open-cell SiC structural foam that can support a thin layer of the highly desirable polished SiC reflector material. SiC foam provides a substantial structural and mass advantage over conventional honeycomb supports and alternative finned structures. The result is a reflector component that meets or exceeds the optical properties of current high-quality glass, ceramic, and metal reflectors while maintaining a substantially lower areal density.

  10. Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

    NASA Astrophysics Data System (ADS)

    Cochrane, Corey J.; Blacksberg, Jordana; Anders, Mark A.; Lenahan, Patrick M.

    2016-11-01

    Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.

  11. Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

    PubMed Central

    Cochrane, Corey J.; Blacksberg, Jordana; Anders, Mark A.; Lenahan, Patrick M.

    2016-01-01

    Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system. PMID:27892524

  12. Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide.

    PubMed

    Cochrane, Corey J; Blacksberg, Jordana; Anders, Mark A; Lenahan, Patrick M

    2016-11-28

    Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.

  13. Modeling and Simulation of Ceramic Arrays to Improve Ballistic Performance

    DTIC Science & Technology

    2014-03-01

    30cal AP M2 Projectile, 762x39 PS Projectile, SPH , Aluminum 5083, SiC, DoP Expeminets, AutoDyn Sin 16. SECURITY CLASSIFICATION OF: UU a. REPORT b...projectile and are modeled using SPH elements in AutoDyn □ Center strike model validation runs with SiC tiles are conducted based on the DOP...Smoothed-particle hydrodynamics ( SPH ) used for all parts, SPH Size = 0.2 3 SiC and SiC 2 are identical in properties and dimensions

  14. Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids.

    PubMed

    Li, Bin; Jiang, Peng; Zhai, Famin; Chen, Junhong; Bei, Guoping; Hou, Xinmei; Chou, Kuo-Chih

    2018-08-31

    In this paper, the fabrication and thermal conductivity (TC) of water-based nanofluids using boron (B)-doped SiC as dispersions are reported. Doping B into the β-SiC phase leads to the shrinkage of the SiC lattice due to the substitution of Si atoms (0.134 nm radius) by smaller B atoms (0.095 nm radius). The presence of B in the SiC phase also promotes crystallization and grain growth of obtained particles. The tailored crystal structure and morphology of B-doped SiC nanoparticles are beneficial for the TC improvement of the nanofluids by using them as dispersions. Using B-doped SiC nanoparticles as dispersions for nanofluids, a remarkable improvement in stability was achieved in SiC-B6 nanofluid at pH 11 by means of the Zeta potential measurement. By dispersing B-doped SiC nanoparticles in water-based fluids, the TC of the as-prepared nanofluids containing only 0.3 vol.% SiC-B6 nanoparticles is remarkably raised to 39.3% at 30 °C compared to the base fluids, and is further enhanced with the increased temperature. The main reasons for the improvement in TC of SiC-B6 nanofluids are more stable dispersion and intensive charge ions vibration around the surface of nanoparticles as well as the enhanced TC of the SiC-B dispersions.

  15. Densification control and analysis of outer shell of new high-temperature vacuum insulated composite

    NASA Astrophysics Data System (ADS)

    Wang, Yang; Chen, Zhaofeng; Jiang, Yun; Yu, Shengjie; Xu, Tengzhou; Li, Binbin; Chen, Zhou

    2017-11-01

    A novel high temperature vacuum insulated composite with low thermal conductivity composed of SiC foam core material and sealing outer shell is discussed, which will have a great potential to be used as thermal protection system material. In this composite, the outer shell is the key to maintain its internal vacuum, which is consisted of 2.5D C/C and SiC coating. So the densification processes of outer shell, including 2.5D braiding process, chemical vapor infiltration (CVI) pyrolytic carbon (PyC) process, polymer infiltration and pyrolysis (PIP) glassy carbon (GC) process and chemical vapor deposition (CVD) SiC process, are focused in this paper. The measuring result of the gas transmission quantity of outer shell is only 0.14 cm3/m2 · d · Pa after 5 times CVD processes, which is two order of magnitude lower than that sample deposited one time. After 10 times thermal shock cycles, the gas transmission quantity increases to 1.2 cm3/m2 · d · Pa. The effective thermal conductivity of high temperature vacuum insulated composite ranged from 0.19 W m-1 K-1 to 0.747 W m-1 K-1 within the temperature from 20 °C to 900 °C. Even after 10 thermal shock cycles, the variation of the effective thermal conductivity is still consistent with that without treatments.

  16. Progress in Solving the Elusive Ag Transport Mechanism in TRISO Coated Particles: What is new?

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Isabella Van Rooyen

    2014-10-01

    The TRISO particle for HTRs has been developed to an advanced state where the coating withstands internal gas pressures and retains fission products during irradiation and under postulated accidents. However, one exception is Ag that has been found to be released from high quality TRISO coated particles when irradiated and can also during high temperature accident heating tests. Although out- of- pile laboratory tests have never hither to been able to demonstrate a diffusion process of Ag in SiC, effective diffusion coefficients have been derived to successfully reproduce measured Ag-110m releases from irradiated HTR fuel elements, compacts and TRISO particlesmore » It was found that silver transport through SiC does not proceed via bulk volume diffusion. Presently grain boundary diffusion that may be irradiation enhanced either by neutron bombardment or by the presence of fission products such as Pd, are being investigated. Recent studies of irradiated AGR-1 TRISO fuel using scanning transmission electron microscopy (STEM), transmission kukuchi diffraction (TKD) patterns and high resolution transmission electron microscopy (HRTEM) have been used to further the understanding of Ag transport through TRISO particles. No silver was observed in SiC grains, but Ag was identified at triple-points and grain boundaries of the SiC layer in the TRISO particle. Cadmium was also found in some of the very same triple junctions, but this could be related to silver behavior as Ag-110m decays to Cd-110. Palladium was identified as the main constituent of micron-sized precipitates present at the SiC grain boundaries and in most SiC grain boundaries and the potential role of Pd in the transport of Ag will be discussed.« less

  17. Scanning and transmission electron microscopy study of the microstructural changes occurring in aluminium matrix composites reinforced with SiC particles during casting and welding: interface reactions

    PubMed

    Urena; Gomez De Salazar JM; Gil; Escalera; Baldonedo

    1999-11-01

    Processing of aluminium matrix composites (AMCs), especially those constituted by a reactive system such as Al-SiC, presents great difficulties which limit their potential applications. The interface reactivity between SiC and molten Al generates an aluminium carbide which degrades the composite properties. Scanning and transmission electron microscopes equipped with energy-dispersive X-ray spectroscopes are essential tools for determining the structure and chemistry of the Al-SiC interfaces in AMCs and changes occurring during casting and arc welding. In the present work, an aluminium-copper alloy (AA2014) reinforced with three different percentages of SiC particles was subjected to controlled remelting tests, at temperatures in the range 750-900 degrees C for 10 and 30 min. Arc welding tests using a tungsten intert gas with power inputs in the range 850-2000 W were also carried out. The results of these studies showed that during remelting there is preferential SiC particle consumption with formation of Al4C3 by interface reaction between the solid SiC particle and the molten aluminium matrix. The formation of Al4C3 by the same mechanism has also been detected in molten pools of arc welded composites. However, in this case there was formation of an almost continuous layer of Al4C3, which protects the particle against further consumption, and formation of aciculate aluminium carbide on the top weld. Both are formed by fusion and dissolution of the SiC in molten aluminium followed by reaction and precipitation of the Al4C3 during cooling.

  18. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    NASA Astrophysics Data System (ADS)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  19. Si/C hybrid nanostructures for Li-ion anodes: An overview

    NASA Astrophysics Data System (ADS)

    Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

    2014-01-01

    This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

  20. Associations of Pd, U and Ag in the SiC layer of neutron-irradiated TRISO fuel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lillo, Thomas; Rooyen, Isabella Van

    2015-05-01

    Knowledge of the associations and composition of fission products in the neutron irradiated SiC layer of high-temperature gas reactor TRISO fuel is important to the understanding of various aspects of fuel performance that presently are not well understood. Recently, advanced characterization techniques have been used to examine fuel particles from the Idaho National Laboratory’s AGR-1 experiment. Nano-sized Ag and Pd precipitates were previously identified in grain boundaries and triple points in the SiC layer of irradiated TRISO nuclear fuel. Continuation of this initial research is reported in this paper and consists of the characterization of a relatively large number ofmore » nano-sized precipitates in three areas of the SiC layer of a single irradiated TRISO nuclear fuel particle using standardless EDS analysis on focused ion beam-prepared transmission electron microscopy samples. Composition and distribution analyses of these precipitates, which were located on grain boundaries, triple junctions and intragranular precipitates, revealed low levels, generally <10 atomic %, of palladium, silver and/or uranium with palladium being the most common element found. Palladium by itself, or associated with either silver or uranium, was found throughout the SiC layer. A small number of precipitates on grain boundaries and triple junctions were found to contain only silver or silver in association with palladium while uranium was always associated with palladium but never found by itself or in association with silver. Intergranular precipitates containing uranium were found to have migrated ~23 μm along a radial direction through the 35 μm thick SiC coating during the AGR-1 experiment while silver-containing intergranular precipitates were found at depths up to ~24 μm in the SiC layer. Also, Pd-rich, nano-precipitates (~10 nm in diameter), without evidence for the presence of either Ag or U, were revealed in intragranular regions throughout the SiC layer. Because not all grain boundaries and triple junctions contained precipitates with fission products and/or uranium, along with the differences in migration behavior between Pd, Ag and U, it was concluded that crystallographic grain boundary and triple junction parameters likely influence migration behavior.« less

  1. CaO-Al2O3 glass-ceramic as a joining material for SiC based components: A microstructural study of the effect of Si-ion irradiation

    NASA Astrophysics Data System (ADS)

    Casalegno, Valentina; Kondo, Sosuke; Hinoki, Tatsuya; Salvo, Milena; Czyrska-Filemonowicz, Aleksandra; Moskalewicz, Tomasz; Katoh, Yutai; Ferraris, Monica

    2018-04-01

    The aim of this work was to investigate and discuss the microstructure and interface reaction of a calcia-alumina based glass-ceramic (CA) with SiC. CA has been used for several years as a glass-ceramic for pressure-less joining of SiC based components. In the present work, the crystalline phases in the CA glass-ceramic and at the CA/SiC interface were investigated and the absence of any detectable amorphous phase was assessed. In order to provide a better understanding of the effect of irradiation on the joining material and on the joints, Si ion irradiation was performed both on bulk CA and CA joined SiC. CA glass-ceramic and CA joined SiC were both irradiated with 5.1 MeV Si2+ ions to 3.3 × 1020 ions/m2 at temperatures of 400 and 800 °C at DuET facility, Kyoto University. This corresponds to a damage level of 5 dpa for SiC averaged over the damage range. This paper presents the results of a microstructural analysis of the irradiated samples as well as an evaluation of the dimensional stability of the CA glass-ceramic and its irradiation temperature and/or damage dependence.

  2. Environmental Effects on Non-oxide Ceramics

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Opila, Elizabeth J.

    1997-01-01

    Non-oxide ceramics such as silicon carbide (SiC) and silicon nitride (Si3N4) are promising materials for a wide range of high temperature applications. These include such diverse applications as components for heat engines, high temperature electronics, and re-entry shields for space vehicles. Table I lists a number of selected applications. Most of the emphasis here will be on SiC and Si3N4. Where appropriate, other non-oxide materials such as aluminum nitride (AlN) and boron nitride (BN) will be discussed. Proposed materials include both monolithic ceramics and composites. Composites are treated in more detail elsewhere in this volume, however, many of the oxidation/corrosion reactions discussed here can be extended to composites. In application these materials will be exposed to a wide variety of environments. Table I also lists reactive components of these environments.It is well-known that SiC and Si3N4 retain their strength to high temperatures. Thus these materials have been proposed for a variety of hot-gas-path components in combustion applications. These include heat exchanger tubes, combustor liners, and porous filters for coal combustion products. All combustion gases contain CO2, CO, H2, H2O, O2, and N2. The exact gas composition is dependent on the fuel to air ratio or equivalence ratio. (Equivalence ratio (EQ) is a fuel-to-air ratio, with total hydrocarbon content normalized to the amount of O2 and defined by EQ=1 for complete combustion to CO2 and H2O). Figure 1 is a plot of equilibrium gas composition vs. equivalence ratio. Note that as a general rule, all combustion atmospheres are about 10% water vapor and 10% CO2. The amounts of CO, H2, and O2 are highly dependent on equivalence ratio.

  3. Production of LEU Fully Ceramic Microencapsulated Fuel for Irradiation Testing

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Terrani, Kurt A; Kiggans Jr, James O; McMurray, Jake W

    2016-01-01

    Fully Ceramic Microencapsulated (FCM) fuel consists of tristructural isotropic (TRISO) fuel particles embedded inside a SiC matrix. This fuel inherently possesses multiple barriers to fission product release, namely the various coating layers in the TRISO fuel particle as well as the dense SiC matrix that hosts these particles. This coupled with the excellent oxidation resistance of the SiC matrix and the SiC coating layer in the TRISO particle designate this concept as an accident tolerant fuel (ATF). The FCM fuel takes advantage of uranium nitride kernels instead of oxide or oxide-carbide kernels used in high temperature gas reactors to enhancemore » heavy metal loading in the highly moderated LWRs. Production of these kernels with appropriate density, coating layer development to produce UN TRISO particles, and consolidation of these particles inside a SiC matrix have been codified thanks to significant R&D supported by US DOE Fuel Cycle R&D program. Also, surrogate FCM pellets (pellets with zirconia instead of uranium-bearing kernels) have been neutron irradiated and the stability of the matrix and coating layer under LWR irradiation conditions have been established. Currently the focus is on production of LEU (7.3% U-235 enrichment) FCM pellets to be utilized for irradiation testing. The irradiation is planned at INL s Advanced Test Reactor (ATR). This is a critical step in development of this fuel concept to establish the ability of this fuel to retain fission products under prototypical irradiation conditions.« less

  4. DARPA - Advanced Composite Materials Annual Presentation Held in Gainesville, Florida on 19-20 November 1992

    DTIC Science & Technology

    1992-11-20

    34 and M.D. Sacks 13) "Fabrication of SiC -Based Composites by Reactive Infiltration of Metals (RIM)" K. Wang," G.W. Scheiffele, P.J. Sanchez-Soto, and...Ig I I keactive Infiltration of Metals (RIM) Ii * Densification with little or no shrinkage e SIC -based composites with little or no residual metal...M.D. Sacks I) Indicates Presenter Intermetallic: Matrix Composites 14) *Processing of Compositionally Tailored Silica-Free MoSi 2/ SiC Composites ’ S

  5. Modeling and Simulation of Ceramic Arrays to Improve Ballaistic Performance

    DTIC Science & Technology

    2013-10-01

    are modeled using SPH elements. Model validation runs with monolithic SiC tiles are conducted based on the DoP experiments described in reference...TERMS ,30cal AP M2 Projectile, 762x39 PS Projectile, SPH , Aluminum 5083, SiC, DoP Expeminets, AutoDyn Simulations, Tile Gap 16. SECURITY...range 700 m/s to 1000 m/s are modeled using SPH elements. □ Model validation runs with monolithic SiC tiles are conducted based on the DoP

  6. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    PubMed

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  7. New constructions of approximately SIC-POVMs via difference sets

    NASA Astrophysics Data System (ADS)

    Luo, Gaojun; Cao, Xiwang

    2018-04-01

    In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are related to quantum state tomography (Caves et al., 2004), quantum cryptography (Fuchs and Sasaki, 2003) [1], and foundational studies (Fuchs, 2002) [2]. However, constructing SIC-POVMs is notoriously hard. Although some SIC-POVMs have been constructed numerically, there does not exist an infinite class of them. In this paper, we propose two constructions of approximately SIC-POVMs, where a small deviation from uniformity of the inner products is allowed. We employ difference sets to present the first construction and the dimension of the approximately SIC-POVMs is q + 1, where q is a prime power. Notably, the dimension of this framework is new. The second construction is based on partial geometric difference sets and works whenever the dimension of the framework is a prime power.

  8. Influence of Ni-P Coated SiC and Laser Scan Speed on the Microstructure and Mechanical Properties of IN625 Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Sateesh, N. H.; Kumar, G. C. Mohan; Krishna, Prasad

    2015-12-01

    Nickel based Inconel-625 (IN625) metal matrix composites (MMCs) were prepared using pre-heated nickel phosphide (Ni-P) coated silicon carbide (SiC) reinforcement particles by Direct Metal Laser Sintering (DMLS) additive manufacturing process under inert nitrogen atmosphere to obtain interface influences on MMCs. The distribution of SiC particles and microstructures were characterized using optical and scanning electron micrographs, and the mechanical behaviours were thoroughly examined. The results clearly reveal that the interface integrity between the SiC particles and the IN625 matrix, the mixed powders flowability, the SiC ceramic particles and laser beam interaction, and the hardness, and tensile characteristics of the DMLS processed MMCs were improved effectively by the use of Ni-P coated SiC particles.

  9. Molecular equilibria and condensation sequences in carbon rich gases

    NASA Technical Reports Server (NTRS)

    Sharp, C. M.; Wasserburg, G. J.

    1993-01-01

    Chemical equilibria in stellar atmospheres have been investigated by many authors. Lattimer, Schramm, and Grossman presented calculations in both O rich and C rich environments and predicted possible presolar condensates. A recent paper by Cherchneff and Barker considered a C rich composition with PAH's included in the calculations. However, the condensation sequences of C bearing species have not been investigated in detail. In a carbon rich gas surrounding an AGB star, it is often assumed that graphite (or diamond) condenses out before TiC and SiC. However, Lattimer et al. found some conditions under which TiC condenses before graphite. We have performed molecular equilibrium calculations to establish the stability fields of C(s), TiC(s), and SiC(s) and other high temperature phases under conditions of different pressures and C/O. The preserved presolar interstellar dust grains so far discovered in meteorites are graphite, diamond, SiC, TiC, and possibly Al2O3.

  10. Dispersion of SiC nanoparticles in cellulose for study of tensile, thermal and oxygen barrier properties.

    PubMed

    Kisku, Sudhir K; Dash, Satyabrata; Swain, Sarat K

    2014-01-01

    Cellulose/silicon carbide (cellulose/SiC) nanobiocomposites were prepared by solution technique. The interaction of SiC nanoparticles with cellulose were confirmed by Fourier transformed infrared (FTIR) spectroscopy. The structure of cellulose/SiC nanobiocomposites was investigated by X-ray diffraction (XRD), and transmission electron microscopy (TEM). The tensile properties of the nanobiocomposites were improved as compared with virgin cellulose. Thermal stabilities of cellulose/SiC nanobiocomposites were studied by thermogravimetric analysis (TGA). The cellulose/SiC nanobiocomposites were thermally more stable than the raw cellulose. It may be due to the delamination of SiC with cellulose matrix. The oxygen barrier properties of cellulose composites were measured using gas permeameter. A substantial reduction in oxygen permeability was obtained with increase in silicon carbide concentrations. The thermally resistant and oxygen barrier properties of the prepared nanobiocomposites may enable the materials for the packaging applications. Copyright © 2013 Elsevier Ltd. All rights reserved.

  11. Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

    1998-01-01

    The surface and interface properties of Pd(sub 0.9)Cr(sub 0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(sub x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 deg. C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Pd(sub x)Si formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(sub 0.9)Cr(sub 0.1) film are likely responsible for significantly improved device sensitivity.

  12. Band-structure calculations of noble-gas and alkali halide solids using accurate Kohn-Sham potentials with self-interaction correction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Y.; Krieger, J.B.; Norman, M.R.

    1991-11-15

    The optimized-effective-potential (OEP) method and a method developed recently by Krieger, Li, and Iafrate (KLI) are applied to the band-structure calculations of noble-gas and alkali halide solids employing the self-interaction-corrected (SIC) local-spin-density (LSD) approximation for the exchange-correlation energy functional. The resulting band gaps from both calculations are found to be in fair agreement with the experimental values. The discrepancies are typically within a few percent with results that are nearly the same as those of previously published orbital-dependent multipotential SIC calculations, whereas the LSD results underestimate the band gaps by as much as 40%. As in the LSD---and it ismore » believed to be the case even for the exact Kohn-Sham potential---both the OEP and KLI predict valence-band widths which are narrower than those of experiment. In all cases, the KLI method yields essentially the same results as the OEP.« less

  13. Characterization of Ceramic Matrix Composite Vane Subelements Subjected to Rig Testing in a Gas Turbine Environment

    NASA Technical Reports Server (NTRS)

    Verrilli, Michael; Calomino, Anthony; Thomas, David J.; Robinson, R. Craig

    2004-01-01

    Vane subelements were fabricated from a silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite. A cross-sectional slice of an aircraft engine metal vane was the basis of the vane subelement geometry. To fabricate the small radius of the vane's trailing edge using stiff Sylramic SiC fibers, a unique SiC fiber architecture was developed. A test configuration for the vanes in a high pressure gas turbine environment was designed and fabricated. Testing was conducted using a pressure of 6 atm and combustion flow rate of 0.5 kg/sec, and consisted of fifty hours of steady state operation followed by 102 2-minute thermal cycles. A surface temperature of 1320 C was obtained for the EBC-coated SiC/SiC vane subelement. This paper will briefly discuss the vane fabrication, test configuration, and results of the vane testing. The emphasis of the paper is on characterization of the post-test condition of the vanes.

  14. Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

    1998-01-01

    The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

  15. Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

    1998-01-01

    The surface and interface properties of Pd(0.9)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

  16. Super-Lensing and Sub-Wavelength Antennas in Mid-IR Using Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Shvets, Gennady; Korobkin, Dmitriy; Urzhumov, Yaroslav A.; Zorman, Christian

    2006-03-01

    Extraordinary properties of SiC in mid-infrared (negative dielectric permittivity and small losses) make it an ideal building block for making negative index meta-materials in that important part of the electromagnetic spectrum. We report on a series of experiments demonstrating that thin films of SiC can be used as a ``perfect'' near-field lens. We have theoretically designed and experimentally implemented a super-lens ion mid-IR using SiC. We also report excitation of electrostatic resonances of two structures based on a sub-micron film of crystalline silicon carbide: (a) nano-holes drilled in the free-standing SiC membrane, and (b) metallic nano-posts evaporated on the SiC membrane. Applications of nano-hole resonances to excitation of magnetic moments in nano-structured SiC and development of negative index materials will be discussed, as will be the prospects of using nano-structured SiC films for laser processing of materials on a nanoscale.

  17. Molecular dynamics simulation of salt rejection through silicon carbide nanotubes as a nanostructure membrane.

    PubMed

    Khataee, Alireza; Bayat, Golchehreh; Azamat, Jafar

    2017-01-01

    Salt rejection phenomenon was investigated using armchair silicon carbide (SiC) nanotubes under applied electric fields. The systems included the (7,7) and (8,8) SiC nanotubes surrounded by silicon nitride membrane immersed in a 0.4mol/L aqueous solution of sodium chloride. Results of molecular dynamics (MD) simulations for selective separation of Na + and Cl - ions showed that the (7,7) SiC nanotube is suitable for separation of cations and the (8,8) SiC nanotube can be used for separating anions. The water desalination by SiC nanotubes was demonstrated by potential of mean force for Na + and Cl - ions in each SiC nanotube. Furthermore, the ionic current, ion residence time, and the radial distribution functions of species were measured to evaluate the properties of the system. Based on the results of this research, the studied SiC nanotubes can be recommended as a nanostructure model for water desalination. Copyright © 2016 Elsevier Inc. All rights reserved.

  18. Assessment of Silicon Carbide Composites for Advanced Salt-Cooled Reactors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Katoh, Yutai; Wilson, Dane F; Forsberg, Charles W

    2007-09-01

    The Advanced High-Temperature Reactor (AHTR) is a new reactor concept that uses a liquid fluoride salt coolant and a solid high-temperature fuel. Several alternative fuel types are being considered for this reactor. One set of fuel options is the use of pin-type fuel assemblies with silicon carbide (SiC) cladding. This report provides (1) an initial viability assessment of using SiC as fuel cladding and other in-core components of the AHTR, (2) the current status of SiC technology, and (3) recommendations on the path forward. Based on the analysis of requirements, continuous SiC fiber-reinforced, chemically vapor-infiltrated SiC matrix (CVI SiC/SiC) compositesmore » are recommended as the primary option for further study on AHTR fuel cladding among various industrially available forms of SiC. Critical feasibility issues for the SiC-based AHTR fuel cladding are identified to be (1) corrosion of SiC in the candidate liquid salts, (2) high dose neutron radiation effects, (3) static fatigue failure of SiC/SiC, (4) long-term radiation effects including irradiation creep and radiation-enhanced static fatigue, and (5) fabrication technology of hermetic wall and sealing end caps. Considering the results of the issues analysis and the prospects of ongoing SiC research and development in other nuclear programs, recommendations on the path forward is provided in the order or priority as: (1) thermodynamic analysis and experimental examination of SiC corrosion in the candidate liquid salts, (2) assessment of long-term mechanical integrity issues using prototypical component sections, and (3) assessment of high dose radiation effects relevant to the anticipated operating condition.« less

  19. A New Method to Grow SiC: Solvent-Laser Heated Floating Zone

    NASA Technical Reports Server (NTRS)

    Woodworth, Andrew A.; Neudeck, Philip G.; Sayir, Ali

    2012-01-01

    The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.

  20. Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

    NASA Astrophysics Data System (ADS)

    Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

    2017-03-01

    This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

  1. Identification and quantification of volatile organic compounds using systematic single-ion chromatograms

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tsuchiya, Yoshio; Kanabus-Kaminska, J.M.

    1996-12-31

    In order to determine the background level of volatile organic compounds (VOCs) in Canadian indoor air, a method of identification and quantification at a level of 0.3 {micro}g/m{sup 3} using systematic single-ion chromatograms (SICs) has been developed. The compounds selected for measurement included several halogenated compounds, oxygen compounds, terpenes, and C8 to C16 n-alkanes. Air samples were taken in 3-layered sorbent tubes and trapped compounds were thermally desorbed into the helium stream of a gas chromatograph/mass spectrometer (GC/MS) analytical system. Total quantities of volatile organic compounds (TVOCs) were measured using a flame ionization detector (FID). Individual compounds were analyzed bymore » a GC/MS. For the identification of compounds in the main stream GC effluent, both the specific GC retention and mass spectra were used. About 50 selected SICs were routinely extracted from a total ion chromatogram (TIC) to detect and quantify compounds. For each compound, a single representative ion was selected. The specific retention was calculated from the elution time on the SIC. For quantification, ion counts under a peak in the SIC were measured. The single-ion MS response factor for some of the compounds was experimentally determined using a dynamic reference procedure.« less

  2. Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC

    NASA Astrophysics Data System (ADS)

    Fashandi, Hossein; Dahlqvist, Martin; Lu, Jun; Palisaitis, Justinas; Simak, Sergei I.; Abrikosov, Igor A.; Rosen, Johanna; Hultman, Lars; Andersson, Mike; Lloyd Spetz, Anita; Eklund, Per

    2017-08-01

    The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti3AuC2 and Ti3Au2C2 phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au into Ti3SiC2 single-crystal thin films with simultaneous out-diffusion of Si. Ti3IrC2 is subsequently produced by a substitution reaction of Ir for Au in Ti3Au2C2. These phases form Ohmic electrical contacts to SiC and remain stable after 1,000 h of ageing at 600 °C in air. The present results, by combined analytical electron microscopy and ab initio calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.

  3. Hot corrosion attack and strength degradation of SiC and Si(sub)3N(sub)4

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Fox, Dennis S.; Jacobson, Nathan S.

    1987-01-01

    Thin films of Na2SO4 and Na2CO3 molten salt deposits were used to corrode sintered SiC and Si3N4 at 1000 C. The resulting attack produced pitting and grain boundary etching resulting in strength decreases ranging from 15 to 50 percent. Corrosion pits were the predominant sources of fracture. The degree of strength decrease was found to be roughly correlated with the depth of the pit, as predicted from fracture toughness considerations. Gas evolution and bubble formation were key aspects of pit formation. Many of the observations of furnace exposures held true in a more realistic burner rig test.

  4. Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio

    NASA Astrophysics Data System (ADS)

    Parro, Rocco J.; Scardelletti, Maximilian C.; Varaljay, Nicholas C.; Zimmerman, Sloan; Zorman, Christian A.

    2008-10-01

    This paper reports an effort to develop amorphous silicon carbide (a-SiC) films for use in shunt capacitor RF MEMS microbridge-based switches. The films were deposited using methane and silane as the precursor gases. Switches were fabricated using 500 nm and 300 nm-thick a-SiC films to form the microbridges. Switches made from metallized 500 nm-thick SiC films exhibited favorable mechanical performance but poor RF performance. In contrast, switches made from metallized 300 nm-thick SiC films exhibited excellent RF performance but poor mechanical performance. Load-deflection testing of unmetallized and metallized bulk micromachined SiC membranes indicates that the metal layers have a small effect on the Young's modulus of the 500 nm and 300 nm-thick SiC MEMS. As for residual stress, the metal layers have a modest effect on the 500 nm-thick structures, but a significant affect on the residual stress in the 300 nm-thick structures.

  5. Microstructure and wear property of the Ti5Si3/TiC reinforced Co-based coatings fabricated by laser cladding on Ti-6Al-4V

    NASA Astrophysics Data System (ADS)

    Weng, Fei; Yu, Huijun; Liu, Jianli; Chen, Chuanzhong; Dai, Jingjie; Zhao, Zhihuan

    2017-07-01

    Ti5Si3/TiC reinforced Co-based composite coatings were fabricated on Ti-6Al-4V titanium alloy by laser cladding with Co42 and SiC mixture. Microstructure and wear property of the cladding coatings with different content of SiC were investigated. During the cladding process, the original SiC dissolved and reacted with Ti forming Ti5Si3 and TiC. The complex in situ formed phases were found beneficial to the improvement of the coating property. Results indicated that the microhardness of the composite coatings was enhanced to over 3 times the substrate. The wear resistance of the coatings also showed distinct improvement (18.4-57.4 times). More SiC gave rise to better wear resistance within certain limits. However, too much SiC (20 wt%) was not good for the further improvement of the wear property.

  6. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  7. Structural, thermal, dielectric spectroscopic and AC impedance properties of SiC nanoparticles doped PVK/PVC blend

    NASA Astrophysics Data System (ADS)

    Alghunaim, Naziha Suliman

    2018-06-01

    Nanocomposite films based on poly (N-vinylcarbazole)/polyvinylchloride (PVK/PVC) blend doped with different concentrations of Silicon Carbide (SiC) nanoparticles have been prepared. The X-ray diffraction, Ultra violet-visible spectroscopy, thermogravimetric analysis and electrical spectroscopic has been used to characterize these nanocomposites. The X-ray analysis confirms the semi-crystalline nature of the films. The intensity of the main X-ray peak is decreased due to the interaction between the PVK/PVC and SiC. The main SiC peaks are absent due to complete dissolution of SiC in polymeric matrices. The UV-Vis spectra indicated that the band gap optical energy is affected by adding SiC nanoparticles because the charges transfer complexes between PVK/PVC with amount of SiC. The thermal stability is improved and the estimated values of ε‧ and ε″ are increased with increasing for SiC content due to the free charge carriers which in turn increase the ionic conductivity of the doped samples. The plots of tan δ with frequency are studied. A single peak from the plot between tan δ and Log (f) is appeared and shifted towards the higher frequency confirmed the presence of relaxing dipoles moment.

  8. Progress in net shape fabrication of alpha SiC turbine components

    NASA Technical Reports Server (NTRS)

    Storm, R. S.; Naum, R. G.

    1983-01-01

    The development status of component technology in an automotive gas turbine Ceramic Applications in Turbine Engines program is discussed, with attention to such materials and processes having a low cost, net shape fabrication potential as sintered alpha-SiC that has been fashioned by means of injection molding, slip casting, and isostatic pressing. The gas turbine elements produced include a gasifier turbine rotor, a turbine wheel, a connecting duct, a combustor baffle, and a transition duct.

  9. Microporous layer based on SiC for high temperature proton exchange membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Lobato, Justo; Zamora, Héctor; Cañizares, Pablo; Plaza, Jorge; Rodrigo, Manuel Andrés

    2015-08-01

    This work reports the evaluation of Silicon Carbide (SiC) for its application in microporous layers (MPL) of HT-PEMFC electrodes and compares results with those obtained using conventional MPL based on Vulcan XC72. Influence of the support load on the MPL prepared with SiC was evaluated, and the MPL were characterized by XRD, Hg porosimetry and cyclic voltammetries. In addition, a short lifetest was carried out to evaluate performance in accelerated stress conditions. Results demonstrate that SiC is a promising alternative to carbonaceous materials because of its higher electrochemical and thermal stability and the positive effect on mass transfer associated to its different pore size distribution. Ohmic resistance is the most significant challenge to be overcome in further studies.

  10. Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

    PubMed

    Sung, Ho-Kun; Qiang, Tian; Yao, Zhao; Li, Yang; Wu, Qun; Lee, Hee-Kwan; Park, Bum-Doo; Lim, Woong-Sun; Park, Kyung-Ho; Wang, Cong

    2017-06-20

    This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF 6 with additive O 2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl 3  + N 2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl 2  + O 2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl 2 and 3.6 sccm O 2 . These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.

  11. Comparative study of SiC- and Si-based photovoltaic inverters

    NASA Astrophysics Data System (ADS)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  12. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at threemore » center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.« less

  13. Thermochemical Assessment of Oxygen Gettering by SiC or ZrC in PuO2-x TRISO Fuel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Besmann, Theodore M

    2010-01-01

    Particulate nuclear fuel in a modular helium reactor is being considered for the consumption of excess plutonium and related transuranics. In particular, efforts to largely consume transuranics in a single-pass will require the fuel to undergo very high burnup. This deep burn concept will thus make the proposed plutonia TRISO fuel particularly likely to suffer kernel migration where carbon in the buffer layer and inner pyrolytic carbon layer is transported from the high temperature side of the particle to the low temperature side. This phenomenon is oberved to cause particle failure and therefore must be mitigated. The addition of SiCmore » or ZrC in the oxide kernel or in a layer in communication with the kernel will lower the oxygen potential and therefore prevent kernel migration, and this has been demonstrated with SiC. In this work a thermochemical analysis was performed to predict oxygen potential behavior in the plutonia TRISO fuel to burnups of 50% FIMA with and without the presence of oxygen gettering SiC and ZrC. Kernel migration is believed to be controlled by CO gas transporting carbon from the hot side to the cool side, and CO pressure is governed by the oxygen potential in the presence of carbon. The gettering phases significantly reduce the oxygen potential and thus CO pressure in an otherwise PuO2-x kernel, and prevent kernel migration by limiting CO gas diffusion through the buffer layer. The reduction in CO pressure can also reduce the peak pressure within the particles by ~50%, thus reducing the likelihood of pressure-induced particle failure. A model for kernel migration was used to semi-quantitatively assess the effect of controlling oxygen potential with SiC or ZrC and did demonstrated the dramatic effect of the addition of these phases on carbon transport.« less

  14. Composite nuclear fuel fabrication methodology for gas fast reactors

    NASA Astrophysics Data System (ADS)

    Vasudevamurthy, Gokul

    An advanced fuel form for use in Gas Fast Reactors (GFR) was investigated. Criteria for the fuel includes operation at high temperature (˜1400°C) and high burnup (˜150 MWD/MTHM) with effective retention of fission products even during transient temperatures exceeding 1600°C. The GFR fuel is expected to contain up to 20% transuranics for a closed fuel cycle. Earlier evaluations of reference fuels for the GFR have included ceramic-ceramic (cercer) dispersion type composite fuels of mixed carbide or nitride microspheres coated with SiC in a SiC matrix. Studies have indicated that ZrC is a potential replacement for SiC on account of its higher melting point, increased fission product corrosion resistance and better chemical stability. The present work investigated natural uranium carbide microspheres in a ZrC matrix instead of SiC. Known issues of minor actinide volatility during traditional fabrication procedures necessitated the investigation of still high temperature but more rapid fabrication techniques to minimize these anticipated losses. In this regard, fabrication of ZrC matrix by combustion synthesis from zirconium and graphite powders was studied. Criteria were established to obtain sufficient matrix density with UC microsphere volume fractions up to 30%. Tests involving production of microspheres by spark erosion method (similar to electrodischarge machining) showed the inability of the method to produce UC microspheres in the desired range of 300 to 1200 mum. A rotating electrode device was developed using a minimum current of 80A and rotating at speeds up to 1500 rpm to fabricate microspheres between 355 and 1200 mum. Using the ZrC process knowledge, UC electrodes were fabricated and studied for use in the rotating electrode device to produce UC microspheres. Fabrication of the cercer composite form was studied using microsphere volume fractions of 10%, 20%, and 30%. The macrostructure of the composite and individual components at various stages were characterized to understand the required fabrication techniques and at the same time meet the necessary GFR fuel characteristics.

  15. Hydrothermal corrosion of silicon carbide joints without radiation

    DOE PAGES

    Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; ...

    2016-09-28

    In this paper, hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti—Si—C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environmentsmore » without radiation. Finally, the SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.« less

  16. Power monitoring in space nuclear reactors using silicon carbide radiation detectors

    NASA Technical Reports Server (NTRS)

    Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

    2005-01-01

    Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

  17. Caries experience of some countries and areas expressed by the Significant Caries Index.

    PubMed

    Nishi, Makiko; Stjernswärd, Jayanthi; Carlsson, Peter; Bratthall, Douglas

    2002-08-01

    To calculate and present the caries prevalence for some countries/states among 12-year-olds, expressed as Significant Caries Index (SiC Index) and to analyse the relationship between the mean DMFT and the SiC Index for these countries. SiC Index is the mean DMFT of the one-third of a population with the highest caries values. An Excel(R) application for calculating SiC was developed (http://www.whocollab.od.mah.se/expl/siccalculation.xls) and indices were calculated from the data collected for 14 countries and one state from the Country/Area Profile Programme (http://www.whocollab.od.mah.se/index.html). To investigate the provinces of a country that had already reached the proposed SiC Index goal of 3 DMFT among the 12-year-olds, data for 17 counties and a city from Sweden were collected and the respective mean DMFT and SiC Indices calculated. The mean DMFT varied from 1.0 to 8.5 and the SiC Index varied from 2.8 to 13.7 in the national data. Jamaica, Senegal and Sweden were the only three countries that showed SiC Indices that were less than 3 DMFT. The mean DMFT varied from 0.5 to 1.4 and the SiC Index varied from 1.4 to 3.6 in the Swedish county/city data examined. A strong linear relationship between the mean DMFT and the SiC Index was found for the populations presented in this study. The SiC Index is an indicator that reflects the situation among the most caries-exposed individuals and could be included in future population-based oral health surveys together with the mean DMFT.

  18. Modeling and testing miniature torsion specimens for SiC joining development studies for fusion

    DOE PAGES

    Henager, Jr., C. H.; Nguyen, Ba N.; Kurtz, Richard J.; ...

    2015-08-05

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. For this research, miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti 3SiC 2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects.more » Finite element elastic damage and elastic–plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti 3SiC 2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. Finally, the implications for joint data based on this sample design are discussed.« less

  19. Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Liu, Yao; Li, Beizhi; Kong, Lingfei

    2018-03-01

    The precision and crack-free surface of brittle silicon carbide (SiC) ceramic was achieved in the nanoscale ductile grinding. However, the nanoscale scratching mechanism and the root causes of SiC ductile response, especially in the atomistic aspects, have not been fully understood yet. In this study, the SiC atomistic scale scratching mechanism was investigated by single diamond grain scratching simulation based on molecular dynamics. The results indicated that the ductile scratching process of SiC could be achieved in the nanoscale depth of cut through the phase transition to an amorphous structure with few hexagonal diamond structure. Furthermore, the silicon atoms in SiC could penetrate into diamond grain which may cause wear of diamond grain. It was further found out that the chip material in the front of grain flowed along the grain side surface to form the groove protrusion as the scratching speed increases. The higher scratching speed promoted more atoms to transfer into the amorphous structure and reduced the hexagonal diamond and dislocation atoms number, which resulted in higher temperature, smaller scratching force, smaller normal stress, and thinner subsurface damage thickness, due to larger speed impaction causing more bonds broken which makes the SiC more ductile.

  20. CLASSiC: Cherenkov light detection with silicon carbide

    NASA Astrophysics Data System (ADS)

    Adriani, Oscar; Albergo, Sebastiano; D'Alessandro, Raffaello; Lenzi, Piergiulio; Sciuto, Antonella; Starodubtsev, Oleksandr; Tricomi, Alessia

    2017-02-01

    We present the CLASSiC R&D for the development of a silicon carbide (SiC) based avalanche photodiode for the detection of Cherenkov light. SiC is a wide-bandgap semiconductor material, which can be used to make photodetectors that are insensitive to visible light. A SiC based light detection device has a peak sensitivity in the deep UV, making it ideal for Cherenkov light. Moreover, the visible blindness allows such a device to disentangle Cherenkov light and scintillation light in all those materials that scintillate above 400 nm. Within CLASSiC, we aim at developing a device with single photon sensitivity, having in mind two main applications. One is the use of the SiC APD in a new generation ToF PET scanner concept, using the Cherenov light emitted by the electrons following 511 keV gamma ray absorption as a time-stamp. Cherenkov is intrinsically faster than scintillation and could provide an unprecedentedly precise time-stamp. The second application concerns the use of SiC APD in a dual readout crystal based hadronic calorimeter, where the Cherenkov component is used to measure the electromagnetic fraction on an event by event basis. We will report on our progress towards the realization of the SiC APD devices, the strategies that are being pursued toward the realization of these devices and the preliminary results on prototypes in terms of spectral response, quantum efficiency, noise figures and multiplication.

  1. Ceramic Integration Technologies for Advanced Energy Systems: Critical Needs, Technical Challenges, and Opportunities

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay

    2010-01-01

    Advanced ceramic integration technologies dramatically impact the energy landscape due to wide scale application of ceramics in all aspects of alternative energy production, storage, distribution, conservation, and efficiency. Examples include fuel cells, thermoelectrics, photovoltaics, gas turbine propulsion systems, distribution and transmission systems based on superconductors, nuclear power generation and waste disposal. Ceramic integration technologies play a key role in fabrication and manufacturing of large and complex shaped parts with multifunctional properties. However, the development of robust and reliable integrated systems with optimum performance requires the understanding of many thermochemical and thermomechanical factors, particularly for high temperature applications. In this presentation, various needs, challenges, and opportunities in design, fabrication, and testing of integrated similar (ceramic ceramic) and dissimilar (ceramic metal) material www.nasa.gov 45 ceramic-ceramic-systems have been discussed. Experimental results for bonding and integration of SiC based Micro-Electro-Mechanical-Systems (MEMS) LDI fuel injector and advanced ceramics and composites for gas turbine applications are presented.

  2. Effect of Copper Coated SiC Reinforcements on Microstructure, Mechanical Properties and Wear of Aluminium Composites

    NASA Astrophysics Data System (ADS)

    Kori, P. S.; Vanarotti, Mohan; Angadi, B. M.; Nagathan, V. V.; Auradi, V.; Sakri, M. I.

    2017-08-01

    Experimental investigations are carried out to study the influence of copper coated Silicon carbide (SiC) reinforcements in Aluminum (Al) based Al-SiC composites. Wear behavior and mechanical Properties like, ultimate tensile strength (UTS) and hardness are studied in the present work. Experimental results clearly revealed that, an addition of SiC particles (5, 10 and 15 Wt %) has lead in the improvement of hardness and ultimate tensile strength. Al-SiC composites containing the Copper coated SiC reinforcements showed better improvement in mechanical properties compared to uncoated ones. Characterization of Al-SiC composites are carried out using optical photomicrography and SEM analysis. Wear tests are carried out to study the effects of composition and normal pressure using Pin-On Disc wear testing machine. Results suggested that, wear rate decreases with increasing SiC composition, further an improvement in wear resistance is observed with copper coated SiC reinforcements in the Al-SiC metal matrix composites (MMC’s).

  3. Optimization of Gas Composition Used in Plasma Chemical Vaporization Machining for Figuring of Reaction-Sintered Silicon Carbide with Low Surface Roughness.

    PubMed

    Sun, Rongyan; Yang, Xu; Ohkubo, Yuji; Endo, Katsuyoshi; Yamamura, Kazuya

    2018-02-05

    In recent years, reaction-sintered silicon carbide (RS-SiC) has been of interest in many engineering fields because of its excellent properties, such as its light weight, high rigidity, high heat conductance and low coefficient of thermal expansion. However, RS-SiC is difficult to machine owing to its high hardness and chemical inertness and because it contains multiple components. To overcome the problem of the poor machinability of RS-SiC in conventional machining, the application of atmospheric-pressure plasma chemical vaporization machining (AP-PCVM) to RS-SiC was proposed. As a highly efficient and damage-free figuring technique, AP-PCVM has been widely applied for the figuring of single-component materials, such as Si, SiC, quartz crystal wafers, and so forth. However, it has not been applied to RS-SiC since it is composed of multiple components. In this study, we investigated the AP-PCVM etching characteristics for RS-SiC by optimizing the gas composition. It was found that the different etching rates of the different components led to a large surface roughness. A smooth surface was obtained by applying the optimum gas composition, for which the etching rate of the Si component was equal to that of the SiC component.

  4. Ceramic heat exchangers for gas turbines or turbojets

    NASA Astrophysics Data System (ADS)

    Boudigues, S.; Fabri, J.

    The required performance goals and several proposed designs for SiC heat exchangers for aerospace turbines are presented. Ceramic materials are explored as a means for achieving higher operating temperatures while controlling the weight and cost of the heat exchangers. Thermodynamic analyses and model tests by ONERA have demonstrated the efficacy of introducing a recooling cycle and placing the heat exchangers between stages of the turbine. Sample applications are discussed for small general aviation aircraft and subsonic missiles equipped with single-flux exchangers. A double-flux exchanger is considered for an aircraft capable of Mach 0.8 speed and at least 11 km altitude for cruise. Finally, the results of initial attempts to manufacture SiC honeycomb heat exchangers are detailed.

  5. The influence of selective chemical doping on clean, low-carrier density SiC epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Chuang, Chiashain; Yang, Yanfei; Huang, Lung-I.; Liang, Chi-Te; Elmquist, Randolph E.; National Institute of of Standards; Technology Collaboration; National Taiwan University, Department of Physics Collaboration

    2015-03-01

    The charge-transfer effect of ambient air on magneto-transport in polymer-free SiC graphene was investigated. Interestingly, adsorption of atmospheric gas molecules on clean epitaxial graphene can reduce the carrier density to near charge neutrality, allowing observation of highly precise v = 2 quantum Hall plateaus. The atmospheric adsorbates were reproducibly removed and pure gases (N2, O2, CO2, H2O) were used to form new individual adsorbates on SiC graphene. Our experimental results (τt/τq ~ 2) support the theoretical predictions for the ratio of transport relaxation time τt to quantum lifetime τq in clean graphene. The analysis of Shubnikov-de Haas oscillations at intermediate doping levels indicates that the carrier scattering is reduced by water and oxygen so as to increase both the classical and quantum mobility. This study points to the key dopant gases in ambient air and also paves the way towards extremely precise quantized Hall resistance standards in epitaxial graphene systems with carrier density tuned by exposure to highly pure gases and vacuum annealing treatment. National Institute of Standard and Technology.

  6. Effect of process conditions and chemical composition on the microstructure and properties of chemically vapor deposited SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x)

    NASA Technical Reports Server (NTRS)

    Pickering, Michael A.; Taylor, Raymond L.; Goela, Jitendra S.; Desai, Hemant D.

    1992-01-01

    Subatmospheric pressure CVD processes have been developed to produce theoretically dense, highly pure, void-free and large area bulk materials, SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x). These materials are used for optical elements, such as mirrors, lenses and windows, over a wide spectral range from the VUV to the IR. We discuss the effect of CVD process conditions on the microstructure and properties of these materials, with emphasis on optical performance. In addition, we discuss the effect of chemical composition on the properties of the composite material ZnS(x)Se(1-x). We first present a general overview of the bulk CVD process and the relationship between process conditions, such as temperature, pressure, reactant gas concentration and growth rate, and the microstructure, morphology and properties of CVD-grown materials. Then we discuss specific results for CVD-grown SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x).

  7. Effect of carbon ion irradiation on Ag diffusion in SiC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Leng, Bin; Ko, Hyunseok; Gerczak, Tyler J.

    Transport of Ag fission product through the silicon-carbide (SiC) diffusion barrier layer in TRISO fuel particles is of considerable interest given the application of this fuel type in high temperature gas-cooled reactor (HTGR) and other future reactor concepts. The reactor experiments indicate that radiation may play an important role in release of Ag; however so far the isolated effect of radiation on Ag diffusion has not been investigated in controlled laboratory experiments. In this study, we investigate the diffusion couples of Ag and polycrystalline 3C–SiC, as well as Ag and single crystalline 4H–SiC samples before and after irradiation with Cmore » 2+ ions. The diffusion couple samples were exposed to temperatures of 1500 °C, 1535 °C, and 1569 °C, and the ensuing diffusion profiles were analyzed by secondary ion mass spectrometry (SIMS). We found that diffusion coefficients calculated from these measurements indicate that Ag diffusion was greatly enhanced by carbon irradiation due to a combined effect of radiation damage on diffusion and the presence of grain boundaries in polycrystalline SiC samples.« less

  8. Effect of carbon ion irradiation on Ag diffusion in SiC

    DOE PAGES

    Leng, Bin; Ko, Hyunseok; Gerczak, Tyler J.; ...

    2015-11-14

    Transport of Ag fission product through the silicon-carbide (SiC) diffusion barrier layer in TRISO fuel particles is of considerable interest given the application of this fuel type in high temperature gas-cooled reactor (HTGR) and other future reactor concepts. The reactor experiments indicate that radiation may play an important role in release of Ag; however so far the isolated effect of radiation on Ag diffusion has not been investigated in controlled laboratory experiments. In this study, we investigate the diffusion couples of Ag and polycrystalline 3C–SiC, as well as Ag and single crystalline 4H–SiC samples before and after irradiation with Cmore » 2+ ions. The diffusion couple samples were exposed to temperatures of 1500 °C, 1535 °C, and 1569 °C, and the ensuing diffusion profiles were analyzed by secondary ion mass spectrometry (SIMS). We found that diffusion coefficients calculated from these measurements indicate that Ag diffusion was greatly enhanced by carbon irradiation due to a combined effect of radiation damage on diffusion and the presence of grain boundaries in polycrystalline SiC samples.« less

  9. Oxidation of C/SiC Composites at Reduced Oxygen Partial Pressures

    NASA Technical Reports Server (NTRS)

    Opila, E. J.; Serra, J. L.

    2007-01-01

    T-300 carbon fibers and T-300 carbon fiber reinforced silicon carbide composites (C/SiC) were oxidized in flowing reduced oxygen partial pressure environments at a total pressure of one atmosphere (0.5 atm O2, 0.05 atm O2 and 0.005 atm O2, balance argon). Experiments were conducted at four temperatures (816deg, 1149deg, 1343deg, and 1538 C). The oxidation kinetics were monitored using thermogravimetric analysis. T-300 fibers were oxidized to completion for times between 0.6 and 90 h. Results indicated that fiber oxidation kinetics were gas phase diffusion controlled. Oxidation rates had an oxygen partial pressure dependence with a power law exponent close to one. In addition, oxidation rates were only weakly dependent on temperature. The C/SiC coupon oxidation kinetics showed some variability, attributed to differences in the number and width of cracks in the SiC seal coat. In general, weight losses were observed indicating oxidation of the carbon fibers dominated the oxidation behavior. Low temperatures and high oxygen pressures resulted in the most rapid consumption of the carbon fibers. At higher temperatures, the lower oxidation rates were primarily attributed to crack closure due to SiC thermal expansion, rather than oxidation of SiC since these reduced rates were observed even at the lowest oxygen partial pressures where SiC oxidation is minimal.

  10. M3FT-16OR020202112 - Report on viability of hydrothermal corrosion resistant SiC/SiC Joint development

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans Jr, James O.

    2016-06-30

    Hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under PWR and BWR relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti-Si-C system, and SiC nanopowder sintering. Most of the formed joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession rate of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing activity environments. The SiC nanopowder sinteredmore » joint was the most corrosion tolerant under the oxidizing activity environment among the four joints.« less

  11. Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature

    DOE PAGES

    Koyanagi, T.; Katoh, Y.; Kiggans, J. O.; ...

    2017-03-10

    We fabricated and irradiated monolithic silicon carbide (SiC) to SiC plate joints with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. Furthermore, the SiC-based bonding layers of the SiC nanopowdermore » sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.« less

  12. On an Aerodynamic Mechanism to Enhance Ion Transmission and Sensitivity of FAIMS for Nano-Electrospray Ionization-Mass Spectrometry

    NASA Astrophysics Data System (ADS)

    Prasad, Satendra; Belford, Michael W.; Dunyach, Jean-Jacques; Purves, Randy W.

    2014-12-01

    Simulations show that significant ion losses occur within the commercial electrospray ionization-field asymmetric waveform ion mobility spectrometer (ESI-FAIMS) interface owing to an angular desolvation gas flow and because of the impact of the FAIMS carrier gas onto the inner rf (radio frequency) electrode. The angular desolvation gas flow diverts ions away from the entrance plate orifice while the carrier gas annihilates ions onto the inner rf electrode. A novel ESI-FAIMS interface is described that optimizes FAIMS gas flows resulting in large improvements in transmission. Simulations with the bromochloroacetate anion showed an improvement of ~9-fold to give ~70% overall transmission). Comparable transmission improvements were attained experimentally for six peptides (2+) in the range of m/z 404.2 to 653.4 at a chromatographic flow rate of 300 nL/min. Selected ion chromatograms (SIC) from nano-LC-FAIMS-MS analyses showed 71% (HLVDEPQNLIK, m/z 653.4, 2+) to 95% (LVNELTEFAK, m/z 582.3, 2+) of ion signal compared with ion signal in the SIC from LC-MS analysis. IGSEVYHNLK (580.3, 2+) showed 24% more ion signal compared with LC-MS and is explained by enhanced desolvation in FAIMS. A 3-10 times lower limits of quantitation (LOQ) (<15% RSD) was achieved for chemical noise limited peaks with FAIMS. Peaks limited by ion statistics showed subtle improvement in RSD and yielded comparable LOQ to that attained with nano-LC-MS (without FAIMS). These improvements were obtained using a reduced FAIMS separation gap (from 2.5 to 1.5 mm) that results in a shorter residence time (13.2 ms ± 3.9 ms) and enables the use of a helium free transport gas (100% nitrogen).

  13. The evaluation of the pyrochemistry for the treatment of Gen IV nuclear fuels Inert matrix chlorination studies in the gas phase or molten chloride salts

    NASA Astrophysics Data System (ADS)

    Bourg, S.; Péron, F.; Lacquement, J.

    2007-01-01

    The structure of the fuels for the future Gen IV nuclear reactors will be totally different from those of PWR, especially for the GFR concept including a closed cycle. In these reactors, fissile materials (carbides or nitrides of actinides) should be surrounded by an inert matrix. In order to build a reprocessing process scheme, the behavior of the potential inert matrices (silicon carbide, titanium nitride, and zirconium carbide and nitride) was studied by hydro- and pyrometallurgy. This paper deals with the chlorination results at high temperature by pyrometallurgy. For the first time, the reactivity of the matrix towards chlorine gas was assessed in the gas phase. TiN, ZrN and ZrC are very reactive from 400 °C whereas it is necessary to be over 900 °C for SiC to be as fast. In molten chloride melts, the bubbling of chlorine gas is less efficient than in gas phase but it is possible to attack the matrices. Electrochemical methods were also used to dissolve the refractory materials, leading to promising results with TiN, ZrN and ZrC. The massive SiC samples used were not conductive enough to be studied and in this case specific SiC-coated carbon electrodes were used. The key point of these studies was to find a method to separate the matrix compounds from the fissile material in order to link the head to the core of the process (electrochemical separation or liquid-liquid reductive extraction in the case of a pyrochemical reprocessing).

  14. Validation of Suomi-NPP VIIRS sea ice concentration with very high-resolution satellite and airborne camera imagery

    NASA Astrophysics Data System (ADS)

    Baldwin, Daniel; Tschudi, Mark; Pacifici, Fabio; Liu, Yinghui

    2017-08-01

    Two independent VIIRS-based Sea Ice Concentration (SIC) products are validated against SIC as estimated from Very High Spatial Resolution Imagery for several VIIRS overpasses. The 375 m resolution VIIRS SIC from the Interface Data Processing Segment (IDPS) SIC algorithm is compared against estimates made from 2 m DigitalGlobe (DG) WorldView-2 imagery and also against estimates created from 10 cm Digital Mapping System (DMS) camera imagery. The 750 m VIIRS SIC from the Enterprise SIC algorithm is compared against DG imagery. The IDPS vs. DG comparisons reveal that, due to algorithm issues, many of the IDPS SIC retrievals were falsely assigned ice-free values when the pixel was clearly over ice. These false values increased the validation bias and RMS statistics. The IDPS vs. DMS comparisons were largely over ice-covered regions and did not demonstrate the false retrieval issue. The validation results show that products from both the IDPS and Enterprise algorithms were within or very close to the 10% accuracy (bias) specifications in both the non-melting and melting conditions, but only products from the Enterprise algorithm met the 25% specifications for the uncertainty (RMS).

  15. Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

    2004-05-01

    In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

  16. Space qualification of silicon carbide for mirror applications: progress and future objectives

    NASA Astrophysics Data System (ADS)

    Palusinski, Iwona A.; Ghozeil, Isaac

    2006-09-01

    Production of optical silicon carbide (SiC) for mirror applications continues to evolve and there are renewed plans to use this material in future space-based systems. While SiC has the potential for rapid and cost-effective manufacturing of large, lightweight, athermal optical systems, this material's use in mirror applications is relatively new and has limited flight heritage. This combination of drivers stresses the necessity for a space qualification program for this material. Successful space qualification will require independent collaboration to absorb the high cost of executing this program while taking advantage of each contributing group's laboratory expertise to develop a comprehensive SiC database. This paper provides an overview of the trends and progress in the production of SiC, and identifies future objectives such as non-destructive evaluation and space-effects modeling to ensure proper implementation of this material into future space-based systems.

  17. Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes ( n-Base versus p-Base Diodes)

    NASA Astrophysics Data System (ADS)

    Ivanov, P. A.; Grekhov, I. V.

    2018-01-01

    The time characteristics of pulse generators based on sharp-recovery 4 H : SiC drift diodes have been calculated. It has been found that the speed of n-base 4 H-SiC diodes is superior to that of p-base diodes with the amplitude and initial pedestal in the output voltage (<5% of the amplitude) versus the time curve being the same.

  18. Environmental Barrier Coatings for Silicon-Based Ceramics

    NASA Technical Reports Server (NTRS)

    Lee, Kang N.; Fox, Dennis S.; Robinson, Raymond C.; Bansal, Narottam P.

    2001-01-01

    Silicon-based ceramics, such as SiC fiber-reinforced SiC (SiC/SiC ceramic matrix composites (CMC) and monolithic silicon nitride (Si3N4), are prime candidates for hot section structural components of next generation gas turbine engines. Silicon-based ceramics, however, suffer from rapid surface recession in combustion environments due to volatilization of the silica scale via reaction with water vapor, a major product of combustion. Therefore, application of silicon-based ceramic components in the hot section of advanced gas turbine engines requires development of a reliable method to protect the ceramic from environmental attack. An external environmental barrier coating (EBC) is considered a logical approach to achieve protection and CP long-term stability. The first generation EBC consisted of two layers, mullite (3Al2O3-2SiO2) bond coat and yttria-stabilized zirconia (YSZ, ZrO2-8 Wt.% Y2O3) top coat. Second generation EBCs, with substantially improved performance compared with the first generation EBC, were developed in the NASA High Speed Research-Enabling Propulsion Materials (HSR-EPM) Program. The first generation EBC consisted of two layers, mullite (3Al2O3-2SiO2) bond coat and yttria-stabilized zirconia (YSZ, ZrO2-8 wt.% Y2O3) top coat. Second generation EBCs, with substantially improved performance compared with the first generation EBC, were developed in the NASA High Speed Research-Enabling Propulsion Materials (HSR-EPM) Program (5). They consist of three layers, a silicon first bond coat, a mullite or a mullite + BSAS (BaO(1-x)-SrO(x)-Al2O3-2SiO2) second bond coat, and a BSAS top coat. The EPM EBCs were applied on SiC/SiC CMC combustor liners in three Solar Turbines (San Diego, CA) Centaur 50s gas turbine engines. The combined operation of the three engines has accumulated over 24,000 hours without failure (approximately 1,250 C maximum combustor liner temperature), with the engine in Texaco, Bakersfield, CA, accumulating about 14,000 hours. As the commercialization of Si-based ceramic components in gas turbines is on the horizon, a major emphasis is placed on EBCs for two reasons. First, they are absolute necessity for the protection of Si-based ceramics from water vapor. Second, they can enable a major enhancement in the performance of gas turbines by creating temperature gradients with the incorporation of a low thermal conductivity layer. Thorough understanding of current state-of-the-art EBCs will provide the foundation upon which development of future EBCs will be based. Phase stability and thermal conductivity of EPM EBCs are published elsewhere. This paper will discuss the chemical/environmental durability and silica volatility of EPM EBCs and their impact on the coating's upper temperature limit.

  19. Silicon Carbide Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2006-01-01

    Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

  20. Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

    NASA Astrophysics Data System (ADS)

    Khorsandi, Behrooz

    There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

  1. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  2. Nanocrystalline SiC film thermistors for cryogenic applications

    NASA Astrophysics Data System (ADS)

    Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

    2018-02-01

    We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

  3. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Henager, Jr., C. H.; Nguyen, Ba N.; Kurtz, Richard J.

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. For this research, miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti 3SiC 2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects.more » Finite element elastic damage and elastic–plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti 3SiC 2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. Finally, the implications for joint data based on this sample design are discussed.« less

  4. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

    NASA Technical Reports Server (NTRS)

    Clemen, L. L.; Devaty, R. P.; Macmillan, M. F.; Yoganathan, M.; Choyke, W. J.; Larkin, D. J.; Powell, J. A.; Edmond, J. A.; Kong, H. S.

    1993-01-01

    Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, and 3C SiC grown on the silicon (0001) face of 6H SiC under special conditions. The lines increase in intensity as more aluminum is added during growth. The multiplicity of observed lines is consistent with symmetry-based models similar to those which have been proposed to describe 4A centers in p-type zincblende semiconductors.

  5. Melt infiltration of silicon carbide compacts. I - Study of infiltration dynamics

    NASA Technical Reports Server (NTRS)

    Asthana, Rajiv; Rohatgi, Pradeep K.

    1992-01-01

    Countergravity, pressure-assisted infiltration with a 2014 Al alloy of suitably tamped porous compacts of platelet shaped single crystals of alpha (hexagonal) silicon carbide was used to measure particulate wettability and infiltration kinetics under dynamic conditions relevant to pressure casting of composites. A threshold pressure P(th) for ingression of the infiltrant was identified based on the experimental penetration length versus pressure profiles for a range of experimental variables which included infiltration pressure, infiltration time, SiC size and SiC surface chemistry. The results showed that P(th) decreased whereas the penetration length increased with increasing SiC size and infiltration time. Cu-coated SiC led to lower P(th) and larger penetration lengths compared to uncoated SiC under identical conditions. These observations have been discussed in the light of theoretical models of infiltration and the kinetics of wetting.

  6. Constructing exact symmetric informationally complete measurements from numerical solutions

    NASA Astrophysics Data System (ADS)

    Appleby, Marcus; Chien, Tuan-Yow; Flammia, Steven; Waldron, Shayne

    2018-04-01

    Recently, several intriguing conjectures have been proposed connecting symmetric informationally complete quantum measurements (SIC POVMs, or SICs) and algebraic number theory. These conjectures relate the SICs to their minimal defining algebraic number field. Testing or sharpening these conjectures requires that the SICs are expressed exactly, rather than as numerical approximations. While many exact solutions of SICs have been constructed previously using Gröbner bases, this method has probably been taken as far as is possible with current computer technology (except in special cases where there are additional symmetries). Here, we describe a method for converting high-precision numerical solutions into exact ones using an integer relation algorithm in conjunction with the Galois symmetries of an SIC. Using this method, we have calculated 69 new exact solutions, including nine new dimensions, where previously only numerical solutions were known—which more than triples the number of known exact solutions. In some cases, the solutions require number fields with degrees as high as 12 288. We use these solutions to confirm that they obey the number-theoretic conjectures, and address two questions suggested by the previous work.

  7. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

    2014-01-01

    Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

  8. Atmospheric forcing of sea ice anomalies in the Ross Sea polynya region

    NASA Astrophysics Data System (ADS)

    Dale, Ethan R.; McDonald, Adrian J.; Coggins, Jack H. J.; Rack, Wolfgang

    2017-01-01

    We investigate the impacts of strong wind events on the sea ice concentration within the Ross Sea polynya (RSP), which may have consequences on sea ice formation. Bootstrap sea ice concentration (SIC) measurements derived from satellite SSM/I brightness temperatures are correlated with surface winds and temperatures from Ross Ice Shelf automatic weather stations (AWSs) and weather models (ERA-Interim). Daily data in the austral winter period were used to classify characteristic weather regimes based on the percentiles of wind speed. For each regime a composite of a SIC anomaly was formed for the entire Ross Sea region and we found that persistent weak winds near the edge of the Ross Ice Shelf are generally associated with positive SIC anomalies in the Ross Sea polynya and vice versa. By analyzing sea ice motion vectors derived from the SSM/I brightness temperatures we find significant sea ice motion anomalies throughout the Ross Sea during strong wind events, which persist for several days after a strong wind event has ended. Strong, negative correlations are found between SIC and AWS wind speed within the RSP indicating that strong winds cause significant advection of sea ice in the region. We were able to partially recreate these correlations using colocated, modeled ERA-Interim wind speeds. However, large AWS and model differences are observed in the vicinity of Ross Island, where ERA-Interim underestimates wind speeds by a factor of 1.7 resulting in a significant misrepresentation of RSP processes in this area based on model data. Thus, the cross-correlation functions produced by compositing based on ERA-Interim wind speeds differed significantly from those produced with AWS wind speeds. In general the rapid decrease in SIC during a strong wind event is followed by a more gradual recovery in SIC. The SIC recovery continues over a time period greater than the average persistence of strong wind events and sea ice motion anomalies. This suggests that sea ice recovery occurs through thermodynamic rather than dynamic processes.

  9. Effect of reinforcing particle type on morphology and age-hardening behavior of Al–4.5 wt.% Cu based nanocomposites synthesized through mechanical milling

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mostaed, A., E-mail: alimostaed@yahoo.com; Saghafian, H.; Mostaed, E.

    2013-02-15

    The effects of reinforcing particle type (SiC and TiC) on morphology and precipitation hardening behavior of Al–4.5%Cu based nanocomposites synthesized via mechanical milling were investigated in the current work. In order to study the microstructure and morphology of mechanically milled powder, X-ray diffraction technique, scanning electron microscopy and high resolution transmission electron microscopy were utilized. Results revealed that at the early stages of mechanical milling, when reinforcing particles are polycrystal, the alloying process is enhanced more in the case of using the TiC particles as reinforcement. But, at the final stages of mechanical milling, when reinforcing particles are single crystal,more » the alloying process is enhanced more in the case of using the SiC ones. Transmission electron microscopy results demonstrated that Al–4.5 wt.%Cu based nanocomposite powders were synthesized and confirmed that the mutual diffusion of aluminum and copper occurs through the interfacial plane of (200). The hardness results showed that not only does introducing 4 vol.% of reinforcing particles (SiC or TiC) considerably decrease the porosity of the bulk composite samples, but also it approximately doubles the hardness of Al–4.5 wt.%Cu alloy (53.4 HB). Finally, apart from TEM and scanning electron microscopy observation which are localized, a decline in hardness in the TiC and SiC contained samples, respectively, after 1.5 and 2 h aging time at 473 K proves the fact that the size of SiC particles is smaller than the size of the TiC ones. - Highlights: ► HRTEM results show mutual diffusion of Al and Cu occurs through the (200) planes. ► TiC particles enhance alloying process more than the SiC ones at the early stages of MM. ► SiC particles enhance alloying process more than the TiC ones at the final stages of MM.« less

  10. Characterization of hot-pressed short ZrO{sub 2} fiber toughened ZrB{sub 2}-based ultra-high temperature ceramics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Jia, E-mail: 2013113205@xmut.edu.cn; Huang, Yu; Zhang, Houan

    2014-09-15

    Two different ZrB{sub 2}-based ultra-high temperature ceramics were produced by hot pressing: ZrB{sub 2} + 20 vol.% SiC particle + 15 vol.% ZrO{sub 2} fiber and ZrB{sub 2} + 20 vol.% SiC whisker + 15 vol.% ZrO{sub 2} fiber. The microstructures were analyzed by using transmission electron microscopy and high-resolution transmission electron microscopy. It was shown that a clean interface without any impurities was identified in ZrB{sub 2}-based hybrid ceramics with SiC whiskers and ZrO{sub 2} fibers, which would significantly improve the toughening mechanism. The results of high-resolution transmission electron microscopy showed that stacking faults in SiC whiskers resulted frommore » an insertion of a (111) layer, which would be one of the main reasons for material anisotropy. However, the interface between the SiC particle and ZrO{sub 2} fiber was found to be ambiguous in ZrB{sub 2}-based hybrid ceramics with SiC particles and ZrO{sub 2} fibers due to the slight reaction. The orientation relationship between t-ZrO{sub 2} and m-ZrO{sub 2} phases obeyed the classical correspondence: (100){sub m}//(100){sub t} and [001]{sub m}//〈001〉{sub t}, which further verified the feasibility of phase transformation toughening mechanism. - Highlights: • ZrB{sub 2}-based ceramics toughened by short ZrO{sub 2} fiber are characterized by TEM and HRTEM. • The orientation relationship of t- and m-ZrO{sub 2} are (100){sub m}//(100){sub t}, [001]{sub m}//〈001〉{sub t} • The clean interface without any impurities leads to improve the toughening mechanism.« less

  11. Surgical informed consent in obstetric and gynecologic surgeries: experience from a comprehensive teaching hospital in Southern Ethiopia.

    PubMed

    Teshome, Million; Wolde, Zenebe; Gedefaw, Abel; Tariku, Mequanent; Asefa, Anteneh

    2018-05-24

    Surgical Informed Consent (SIC) has long been recognized as an important component of modern medicine. The ultimate goals of SIC are to improve clients' understanding of the intended procedure, increase client satisfaction, maintain trust between clients and health providers, and ultimately minimize litigation issues related to surgical procedures. The purpose of the current study is to assess the comprehensiveness of the SIC process for women undergoing obstetric and gynecologic surgeries. A hospital-based cross-sectional study was undertaken at Hawassa University Comprehensive Specialized Hospital (HUCSH) in November and December, 2016. A total of 230 women who underwent obstetric and/or gynecologic surgeries were interviewed immediately after their hospital discharge to assess their experience of the SIC process. Thirteen components of SIC were used based on international recommendations, including the Royal College of Surgeon's standards of informed consent practices for surgical procedures. Descriptive summaries are presented in tables and figures. Forty percent of respondents were aged between 25 and 29 years. Nearly a quarter (22.6%) had no formal education. More than half (54.3%) of respondents had undergone an emergency surgical procedure. Only 18.4% of respondents reported that the surgeon performing the operation had offered SIC, while 36.6% of respondents could not recall who had offered SIC. All except one respondent provided written consent to undergo a surgical procedure. However, 8.3% of respondents received SIC service while already on the operation table for their procedure. Only 73.9% of respondents were informed about the availability (or lack thereof) of alternative treatment options. Additionally, a majority of respondents were not informed about the type of anesthesia to be used (88.3%) and related complications (87.4%). Only 54.2% of respondents reported that they had been offered at least six of the 13 SIC components used by the investigators. There is gap in the provision of comprehensive and standardized pre-operative counseling for obstetric and gynecologic surgeries in the study hospital. This has a detrimental effect on the overall quality of care clients receive, specifically in terms of client expectations and information needs.

  12. Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

    NASA Astrophysics Data System (ADS)

    Suri, Jyothi

    Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much lower costs. The second part of the work has comprised of the successful fabrication of bilayered SiC membranes with a graded porosity, consisting of porous nano-SiC layer on the surface of a porous coarse-grained SiC support layer. The effect of different particle sizes of SiC in the support layers was systematically studied. Also, the effects of sintering temperature were investigated to control the pore size, particle size and overall density of the bi-layered SiC membrane.

  13. A comparative study of the mechanical and thermal properties of defective ZrC, TiC and SiC.

    PubMed

    Jiang, M; Zheng, J W; Xiao, H Y; Liu, Z J; Zu, X T

    2017-08-24

    ZrC and TiC have been proposed to be alternatives to SiC as fuel-cladding and structural materials in nuclear reactors due to their strong radiation tolerance and high thermal conductivity at high temperatures. To unravel how the presence of defects affects the thermo-physical properties under irradiation, first-principles calculations based on density function theory were carried out to investigate the mechanical and thermal properties of defective ZrC, TiC and SiC. As compared with the defective SiC, the ZrC and TiC always exhibit larger bulk modulus, smaller changes in the Young's and shear moduli, as well as better ductility. The total thermal conductivity of ZrC and TiC are much larger than that of SiC, implying that under radiation environment the ZrC and TiC will exhibit superior heat conduction ability than the SiC. One disadvantage for ZrC and TiC is that their Debye temperatures are generally lower than that of SiC. These results suggest that further improving the Debye temperature of ZrC and TiC will be more beneficial for their applications as fuel-cladding and structural materials in nuclear reactors.

  14. Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

    NASA Astrophysics Data System (ADS)

    Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

    2016-10-01

    Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

  15. Angle-independent measure of motion for image-based gating in 3D coronary angiography

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lehmann, Glen C.; Holdsworth, David W.; Drangova, Maria

    2006-05-15

    The role of three-dimensional (3D) image guidance for interventional procedures and minimally invasive surgeries is increasing for the treatment of vascular disease. Currently, most interventional procedures are guided by two-dimensional x-ray angiography, but computed rotational angiography has the potential to provide 3D geometric information about the coronary arteries. The creation of 3D angiographic images of the coronary arteries requires synchronization of data acquisition with respect to the cardiac cycle, in order to minimize motion artifacts. This can be achieved by inferring the extent of motion from a patient's electrocardiogram (ECG) signal. However, a direct measurement of motion (from the 2Dmore » angiograms) has the potential to improve the 3D angiographic images by ensuring that only projections acquired during periods of minimal motion are included in the reconstruction. This paper presents an image-based metric for measuring the extent of motion in 2D x-ray angiographic images. Adaptive histogram equalization was applied to projection images to increase the sharpness of coronary arteries and the superior-inferior component of the weighted centroid (SIC) was measured. The SIC constitutes an image-based metric that can be used to track vessel motion, independent of apparent motion induced by the rotational acquisition. To evaluate the technique, six consecutive patients scheduled for routine coronary angiography procedures were studied. We compared the end of the SIC rest period ({rho}) to R-waves (R) detected in the patient's ECG and found a mean difference of 14{+-}80 ms. Two simultaneous angular positions were acquired and {rho} was detected for each position. There was no statistically significant difference (P=0.79) between {rho} in the two simultaneously acquired angular positions. Thus we have shown the SIC to be independent of view angle, which is critical for rotational angiography. A preliminary image-based gating strategy that employed the SIC was compared to an ECG-based gating strategy in a porcine model. The image-based gating strategy selected 61 projection images, compared to 45 selected by the ECG-gating strategy. Qualitative comparison revealed that although both the SIC-based and ECG-gated reconstructions decreased motion artifact compared to reconstruction with no gating, the SIC-based gating technique increased the conspicuity of smaller vessels when compared to ECG gating in maximum intensity projections of the reconstructions and increased the sharpness of a vessel cross section in multi-planar reformats of the reconstruction.« less

  16. Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

    NASA Astrophysics Data System (ADS)

    Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

    2018-05-01

    The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

  17. Precession electron diffraction for SiC grain boundary characterization in unirradiated TRISO fuel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lillo, T. M.; van Rooyen, I. J.; Wu, Y. Q.

    Precession electron diffraction (PED), a transmission electron microscopy-based technique, has been evaluated for the suitability for evaluating grain boundary character in the SiC layer of tristructural isotropic (TRISO) fuel. Although the ultimate goal is to determine the grain boundary characteristics of fission product containing grain boundaries of neutron irradiated SiC, our work reports the effect of transmission electron microscope (TEM) lamella thickness on quality of data and establishes a baseline comparison on grain boundary characteristics determined previously using a conventional EBSD scanning electron microscope (SEM) based technique. In general, it was determined that the lamella thickness produced using the standardmore » FIB fabrication process, is sufficient to provide reliable PED measurements with thicker lamellae (~120 nm) produce higher quality orientation data. Analysis of grain boundary character from the TEM-based PED data showed a much lower fraction of low angle grain boundaries compared to SEM-based EBSD data from the SiC layer of the same TRISO-coated particle as well as a SiC layer deposited at a slightly lower temperature. The fractions of high angle and CSL-related grain boundaries determined by PED are similar to those found using SEM-based EBSD. Since the grain size of the SiC layer of TRSIO fuel can be as small as 250 nm [12], depending on the fabrication parameters, and grain boundary fission product precipitates can be nano-sized, the TEM-based PED orientation data collection method is preferred to determine an accurate representation of the relative fractions of low angle, high angle and CSL-related grain boundaries. It was concluded that although the resolution of the PED data is better by more than an order of magnitude, data acquisition times may be significantly longer or the number of areas analyzed significantly larger than the SEM-based method to obtain a statistically relevant distribution. Also, grain size could be accurately determined but significantly larger analysis areas than those used in this study would be required.« less

  18. Precession electron diffraction for SiC grain boundary characterization in unirradiated TRISO fuel

    DOE PAGES

    Lillo, T. M.; van Rooyen, I. J.; Wu, Y. Q.

    2016-06-16

    Precession electron diffraction (PED), a transmission electron microscopy-based technique, has been evaluated for the suitability for evaluating grain boundary character in the SiC layer of tristructural isotropic (TRISO) fuel. Although the ultimate goal is to determine the grain boundary characteristics of fission product containing grain boundaries of neutron irradiated SiC, our work reports the effect of transmission electron microscope (TEM) lamella thickness on quality of data and establishes a baseline comparison on grain boundary characteristics determined previously using a conventional EBSD scanning electron microscope (SEM) based technique. In general, it was determined that the lamella thickness produced using the standardmore » FIB fabrication process, is sufficient to provide reliable PED measurements with thicker lamellae (~120 nm) produce higher quality orientation data. Analysis of grain boundary character from the TEM-based PED data showed a much lower fraction of low angle grain boundaries compared to SEM-based EBSD data from the SiC layer of the same TRISO-coated particle as well as a SiC layer deposited at a slightly lower temperature. The fractions of high angle and CSL-related grain boundaries determined by PED are similar to those found using SEM-based EBSD. Since the grain size of the SiC layer of TRSIO fuel can be as small as 250 nm [12], depending on the fabrication parameters, and grain boundary fission product precipitates can be nano-sized, the TEM-based PED orientation data collection method is preferred to determine an accurate representation of the relative fractions of low angle, high angle and CSL-related grain boundaries. It was concluded that although the resolution of the PED data is better by more than an order of magnitude, data acquisition times may be significantly longer or the number of areas analyzed significantly larger than the SEM-based method to obtain a statistically relevant distribution. Also, grain size could be accurately determined but significantly larger analysis areas than those used in this study would be required.« less

  19. Optimization of tribological performance of SiC embedded composite coating via Taguchi analysis approach

    NASA Astrophysics Data System (ADS)

    Maleque, M. A.; Bello, K. A.; Adebisi, A. A.; Akma, N.

    2017-03-01

    Tungsten inert gas (TIG) torch is one of the most recently used heat source for surface modification of engineering parts, giving similar results to the more expensive high power laser technique. In this study, ceramic-based embedded composite coating has been produced by precoated silicon carbide (SiC) powders on the AISI 4340 low alloy steel substrate using TIG welding torch process. A design of experiment based on Taguchi approach has been adopted to optimize the TIG cladding process parameters. The L9 orthogonal array and the signal-to-noise was used to study the effect of TIG welding parameters such as arc current, travelling speed, welding voltage and argon flow rate on tribological response behaviour (wear rate, surface roughness and wear track width). The objective of the study was to identify optimal design parameter that significantly minimizes each of the surface quality characteristics. The analysis of the experimental results revealed that the argon flow rate was found to be the most influential factor contributing to the minimum wear and surface roughness of the modified coating surface. On the other hand, the key factor in reducing wear scar is the welding voltage. Finally, a convenient and economical Taguchi approach used in this study was efficient to find out optimal factor settings for obtaining minimum wear rate, wear scar and surface roughness responses in TIG-coated surfaces.

  20. Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

    PubMed

    Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

    2017-10-11

    It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(0001[combining macron]) substrates and the design of graphene/TiC/SiC-based electronic devices.

  1. 88 kilowatt automotive inverter with new 900 Volt silicon carbide MOSFET technology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Casady, Jeffrey; Olejniczak, Kraig; McNutt, Ty

    This final report is on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands of hybrid, plug-in hybrid, and extended-range electrified vehicle architectures. Significant performance improvement, via conduction, switching, and reverse-recovery loss metrics, from this SiC MOSFET-based inverter—especially at light load conditions—will be discussed.

  2. Effects of high pressure nitrogen on the thermal stability of SiC fibers

    NASA Technical Reports Server (NTRS)

    Jaskowiak, Martha H.

    1991-01-01

    Polymer-derived SiC fibers were exposed to nitrogen gas pressures of 7 and 50 atm at temperatures up to 1800 C. The fiber weight loss, chemical composition, and tensile strength were then measured at room temperature in order to understand the effects of nitrogen exposure on fiber stability. High pressure nitrogen treatments limited weight loss to 3 percent or less for temperatures up to 1800 C. The bulk Si-C-O chemical composition of the fiber remained relatively constant up to 1800 C with only a slight increase in nitrogen content after treatment at 50 atm; however, fiber strength retention was significantly improved. To further understand the effects of the nitrogen atmosphere on the fiber stability, the results of previous high pressure argon treatments were compared to those of the high pressure nitrogen treatments. High pressure inert gas can temporarily maintain fiber strength by physically inhibiting the evolution of gaseous species which result from internal reactions. In addition to this physical effect, it would appear that high pressure nitrogen further improved fiber temperature capability by chemically reacting with the fiber surface, thereby reducing the rate of gas evolution. Subsequent low pressure argon treatments following the initial nitrogen treatments resulted in stronger fibers than after argon treatment alone, further supporting the chemical reaction mechanism and its beneficial effects on fiber strength.

  3. Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

    NASA Astrophysics Data System (ADS)

    Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

    2016-09-01

    The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

  4. Isotopic Composition of Molybdenum and Barium in Single Presolar Silicon Carbide Grains of Type A+B

    NASA Technical Reports Server (NTRS)

    Savina, M. R.; Tripa, C. E.; Pellin, M. J.; Davis, A. M.; Clayton, R. N.; Lewis, R. S.; Amari, S.

    2003-01-01

    Presolar SiC grains fall into several groups based on C, N, and Si isotopic compositions. Approximately 93% are defined as mainstream, having 10 less than C-12/C-13 less than 100 and N-14/N-15 ranging from 50 to 20,000. A number of studies have shown that the most likely sources of mainstream grains are low mass asymptotic giant branch stars. Models of nucleosynthesis in AGB stars reproduce the s-process enhancements seen in the heavy elements in mainstream SiC grains. Among the less common grains, A+B grains, which comprise approximately 3-4% of presolar SiC, are perhaps the least well understood. Recent studies by Amari et al. show that A+B grains can be divided into at least 4 groups based on their trace element concentration patterns. Of 20 grains studied, 7 showed trace element patterns consistent with condensation from a gas of solar system composition, while the rest had varying degrees of process enhancements. Our previous measurements on 3 A+B grains showed Mo of solar isotopic composition, but Zr with a strong enhancement in 96Zr, which is an r-process isotope but can be made in an sprocess if the neutron density is high enough to bridge the unstable Zr-95 (T(sub 1/2)= 64 d). The observation of Mo with solar system isotopic composition in the same grains is puzzling however. Meyer et al. have recently shown that a neutron burst mechanism can produce a high Zr-96/Zr-94 without enhancing Mo-100, however this model leads to enhancements in Mo-95 and Mo-97 not observed in A+B grains. We report here results of Mo measurements on 7 additional A+B grains, and Ba measurements on 2 A+B grains, and compare these to the previous studies.

  5. Effect of SiC Content on the Ablation and Oxidation Behavior of ZrB2-Based Ultra High Temperature Ceramic Composites

    PubMed Central

    Hu, Ping; Gui, Kaixuan; Yang, Yang; Dong, Shun; Zhang, Xinghong

    2013-01-01

    The ablation and oxidation of ZrB2-based ultra high temperature ceramic (UHTC) composites containing 10%, 15% and 30% v/v SiC were tested under different heat fluxes in a high frequency plasma wind tunnel. Performance was significantly affected by the surface temperature, which was strongly dependent on the composition. Composites containing 10% SiC showed the highest surface temperature (>2300 °C) and underwent a marked degradation under both conditions. In contrast, composites with 30% SiC exhibited the lowest surface temperature (<2000 °C) and demonstrated excellent ablation resistance. The surface temperature of UHTCs in aerothermal testing was closely associated with the dynamic evolution of the surface and bulk oxide properties, especially for the change in chemical composition on the exposed surface, which was strongly dependent on the material composition and testing parameters (i.e., heat flux, enthalpy, pressure and test time), and in turn affected its oxidation performance. PMID:28809239

  6. Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred

    This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

  7. Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

    DOE PAGES

    Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred; ...

    2017-01-19

    This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

  8. Early implementation of SiC cladding fuel performance models in BISON

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Powers, Jeffrey J.

    2015-09-18

    SiC-based ceramic matrix composites (CMCs) [5–8] are being developed and evaluated internationally as potential LWR cladding options. These development activities include interests within both the DOE-NE LWR Sustainability (LWRS) Program and the DOE-NE Advanced Fuels Campaign. The LWRS Program considers SiC ceramic matrix composites (CMCs) as offering potentially revolutionary gains as a cladding material, with possible benefits including more efficient normal operating conditions and higher safety margins under accident conditions [9]. Within the Advanced Fuels Campaign, SiC-based composites are a candidate ATF cladding material that could achieve several goals, such as reducing the rates of heat and hydrogen generation duemore » to lower cladding oxidation rates in HT steam [10]. This work focuses on the application of SiC cladding as an ATF cladding material in PWRs, but these work efforts also support the general development and assessment of SiC as an LWR cladding material in a much broader sense.« less

  9. Effect of SiC Content on the Ablation and Oxidation Behavior of ZrB₂-Based Ultra High Temperature Ceramic Composites.

    PubMed

    Hu, Ping; Gui, Kaixuan; Yang, Yang; Dong, Shun; Zhang, Xinghong

    2013-04-29

    The ablation and oxidation of ZrB₂-based ultra high temperature ceramic (UHTC) composites containing 10%, 15% and 30% v/v SiC were tested under different heat fluxes in a high frequency plasma wind tunnel. Performance was significantly affected by the surface temperature, which was strongly dependent on the composition. Composites containing 10% SiC showed the highest surface temperature (>2300 °C) and underwent a marked degradation under both conditions. In contrast, composites with 30% SiC exhibited the lowest surface temperature (<2000 °C) and demonstrated excellent ablation resistance. The surface temperature of UHTCs in aerothermal testing was closely associated with the dynamic evolution of the surface and bulk oxide properties, especially for the change in chemical composition on the exposed surface, which was strongly dependent on the material composition and testing parameters ( i.e. , heat flux, enthalpy, pressure and test time), and in turn affected its oxidation performance.

  10. Method of making an icosahedral boride structure

    DOEpatents

    Hersee, Stephen D.; Wang, Ronghua; Zubia, David; Aselage, Terrance L.; Emin, David

    2005-01-11

    A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.

  11. SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Robinson, R. Craig; Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

    1999-01-01

    SiC and Si3N4 materials were tested under various turbine engine combustion environments, chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high speed aircraft. Representative CVD, sintered, and composite materials were evaluated in both furnace and high pressure burner rig exposure. While protective SiO2 scales form in all cases, evidence is presented to support paralinear growth kinetics, i.e. parabolic growth moderated simultaneously by linear volatilization. The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were used to map SiO2 volatility (and SiC recession) over a range of temperature, pressure, and velocity. The functional dependency of material recession (volatility) that emerged followed the form: exp(-QIRT) * P(exp x) * v(exp y). These empirical relations were compared to rates predicted from the thermodynamics of volatile SiO and SiO(sub x)H(sub Y) reaction products and a kinetic model of diffusion through a moving, boundary layer. For typical combustion conditions, recession of 0.2 to 2 micron/h is predicted at 1200- 1400C, far in excess of acceptable long term limits.

  12. High Temperature Mechanical Characterization of Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Gyekenyesi, John Z.

    1998-01-01

    A high temperature mechanical characterization laboratory has been assembled at NASA Lewis Research Center. One contribution of this work is to test ceramic matrix composite specimens in tension in environmental extremes. Two high temperature tensile testing systems were assembled. The systems were assembled based on the performance and experience of other laboratories and meeting projected service conditions for the materials in question. The systems use frames with an electric actuator and a center screw. A PC based data acquisition and analysis system is used to collect and analyze the data. Mechanical extensometers are used to measure specimen strain. Thermocouples, placed near the specimen, are used to measure the specimen gage section temperature. The system for testing in air has a resistance element furnace with molybdenum disilicide elements and pneumatic grips with water cooling attached to hydraulic alignment devices. The system for testing in an inert gas has a graphite resistance element furnace in a chamber with rigidly mounted, water cooled, hydraulically actuated grips. Unidirectional SiC fiber reinforced reaction bonded Si3N4 and triaxially woven, two dimensional, SiC fiber reinforced enhanced SiC composites were tested in unidirectional tension. Theories for predicting the Young's modulus, modulus near the ultimate strength, first matrix cracking stress, and ultimate strength were applied and evaluated for suitability in predicting the mechanical behavior of SiC/RBSN and enhanced SiC/SiC composites. The SiC/RBSN composite exhibited pseudo tough behavior (increased area under the stress/strain curve) from 22 C to 1500 C. The rule of mixtures provides a good estimate of the Young's modulus of the SiC/RBSN composite using the constituent properties from room temperature to 1440 C for short term static tensile tests in air or nitrogen. The rule of mixtures significantly overestimates the secondary modulus near the ultimate strength. The ACK theory provides the best approximation of the first matrix cracking stress when residual stresses are ignored. The theory of Cao and Thouless, based on Weibull statistics, gave the best prediction for the composite ultimate strength. The enhanced SiC/SiC composite exhibited nonlinear stress/strain behavior from 24 C to 1370 C in air with increased ultimate strain when compared to monolithic SiC. The theory of Yang and Chou with the assumption of a frictional fiber/matrix interface provided the best estimate of the Young's modulus. The theory of Cao and Thouless gave the best estimate for the ultimate strength.

  13. Ultra High Temperature (UHT) SiC Fiber (Phase 2)

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Jacobson, Nathan S.; Lizcano, Maricela; Bhatt, Ramakrishna T.

    2015-01-01

    Silicon-carbide fiber-reinforced silicon-carbide ceramic matrix composites (SiCSiC CMC) are emerginglightweight re-usable structural materials not only for hot section components in gas turbine engines, but also for controlsurfaces and leading edges of reusable hypersonic vehicles as well as for nuclear propulsion and reactor components. Ithas been shown that when these CMC are employed in engine hot-section components, the higher the upper usetemperature (UUT) of the SiC fiber, the more performance benefits are accrued, such as higher operating temperatures,reduced component cooling air, reduced fuel consumption, and reduced emissions. The first generation of SiCSiC CMC with a temperature capability of 2200-2400F are on the verge of being introduced into the hot-section components ofcommercial and military gas turbine engines.Today the SiC fiber type currently recognized as the worlds best in terms ofthermo-mechanical performance is the Sylramic-iBN fiber. This fiber was previously developed by the PI at NASA GRC using patented processes to improve the high-cost commercial Sylramic fiber, which in turn was derived from anotherlow-cost low-performance commercial fiber. Although the Sylramic-iBN fiber shows state-of-the art creep and rupture resistance for use temperatures above 2550oF, NASA has shown by fundamental creep studies and model developmentthat its microstructure and creep resistance could theoretically be significantly improved to produce an Ultra HighTemperature (UHT) SiC fiber.This Phase II Seedling Fund effort has been focused on the key objective of effectively repeating the similar processes used for producing the Sylramic-iBN fiber using a design of experiments approach to first understand the cause of the less than optimum Sylramic-iBN microstructure and then attempting to develop processconditions that eliminate or minimize these key microstructural issues. In so doing, it is predicted that that theseadvanced process could result in an UHT SiC fiber with 20 times more creep resistance than the Sylramic-iBN fiber,which in turn would allow SiCSiC CMC to operate up to 2700oF and above, thereby further enhancing the performancebenefits of SiCSiC components in aero-propulsion engines. It was also envisioned that the fiber processes developedduring Phase II efforts would not only reduce production costs for the UHT fiber by using low-cost precursor fibers andcombined processes, but also allow the UHT fibers to be directly produced in preforms of the precursor fibers, possibly atthe facilities of the CMC fabricator.

  14. The Influence of the Photoionizing Radiation Spectrum on Metal-Line Ratios in Ly(alpha) Forest Clouds

    NASA Technical Reports Server (NTRS)

    Giroux, Mark L.; Shull, J. Michael

    1997-01-01

    Recent measurements of Si IV/C IV ratios in the high-redshift Ly(alpha) forest (Songaila & Cowie, AJ, 112, 335 (1996a); Savaglio et at., A&A (in press) (1997)) have opened a new window on chemical enrichment and the first generations of stars. However, the derivation of accurate Si/C abundances requires reliable ionization corrections, which are strongly dependent on the spectral shape of the metagalactic ionizing background and on the 'local effects' of hot stars in nearby galaxies. Recent models have assumed power-law quasar ionizing backgrounds plus a decrement at 4 Ryd to account for He II attenuation in intervening clouds. However, we show that realistic ionizing backgrounds based on cosmological radiative transfer models produce more complex ionizing spectra between 1-5 Ryd that are critical to interpreting ions of Si and C. We also make a preliminary investigation of the effects of He II ionization front nonoverlap. Because the attenuation and reemission by intervening clouds enhance Si IV relative to C the observed high Si IV/C IV ratios do not require an unrealistic Si overproduction (Si/C greater than or equal to 3 (Si/C)(solar mass)). If the ionizing spectrum is dominated by 'local effects' from massive stars, even larger Si IV/C IV ratios are possible. However, unless stellar radiation dominates quasars by more than a factor of 10, we confirm the evidence for some Si overproduction by massive stars; values Si/C approx. 2(Si/C)(solar mass) fit the measurements better than solar abundances. Ultimately, an adequate interpretation of the ratios of C IV, Si IV, and C II may require hot, collisionally ionized gas in a multiphase medium.

  15. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wilson, Dane F.

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity],more » a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O 2 cannot be ignored, especially for the FHR, in which environment the product, SiO 2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.« less

  16. Development of x-ray mask in Taiwan

    NASA Astrophysics Data System (ADS)

    Sheu, Jeng Tzong; Su, Shyang

    1996-05-01

    This paper presents results of using silicon carbide (SiC) and silicon-rich silicon nitride (SiNx) as membrane for X-ray masks in technology of X-ray lithography. Microcrystalline silicon carbide film was deposited on silicon substrate by electron synchrotron resonance plasma-enhanced chemical vapor deposition at 300 degrees C utilizing a SiH4/CH4/H2/Ar gas mixture. Low tensile stress film which is suitable as X-ray membrane can be achieved by annealing after silicon carbide film deposition. The microwave power over 800 watts and the gas ratio (Methane:Silane) larger than 1.5 are needed for the stoichiometry of SiC film. On the other hand, we deposited silicon-rich silicon nitride film on silicon substrate by low pressure chemical vapor deposition at 850 degrees C to 900 degrees C. In order to get low tensile stress film, different gas flow ratios (Dichlorosilane:Ammonia) were tested. The increased gas flow ratio (Dichlorosilane:Ammonia) and the increased deposition temperature are related to the decrease of tensile stress of film. Roughness, uniformity, optical transmittance and soft X-ray transmission of both films are reported. The absorption bands of both films were measured by FTIR spectroscopy. The surface morphology was monitored by AFM. The photon transmission of both films was measured in the range of 400 to 800 nm for visible light and 800 to 1600 ev photon energy for SR soft X-ray transmission was conducted at the Synchrotron Radiation Research Center, Hsinchu, Taiwan. The deposition rate of both films are 13 nm/min and 40 nm/min for silicon nitride and silicon carbide, respectively.

  17. Rapid Fabrication of Lightweight SiC Optics using Reactive Atom Plasma (RAP) Processing

    NASA Technical Reports Server (NTRS)

    Fiske, Peter S.

    2006-01-01

    Reactive Atom Plasma (RAP) processing is a non-contact, plasma-based processing technology that can be used to generate damage-free optical surfaces. We have developed tools and processes using RAP that allow us to shape extremely lightweight mirror Surfaces made from extremely hard-to-machine materials (e.g. SiC). We will describe our latest results using RAP in combination with other technologies to produce finished lightweight SiC mirrors and also discuss applications for RAP in the rapid fabrication of mirror segments for reflective and grazing incidence telescopes.

  18. SiC lightweight telescopes for advanced space applications. II - Structures technology

    NASA Technical Reports Server (NTRS)

    Anapol, Michael I.; Hadfield, Peter; Tucker, Theodore

    1992-01-01

    A critical technology area for lightweight SiC-based telescope systems is the structural integrity and thermal stability over spaceborne environmental launch and thermal operating conditions. Note, it is highly desirable to have an inherently athermal design of both SiC mirrors and structure. SSG has developed an 8 inch diameter SiC telescope system for brassboard level optical and thermal testing. The brassboard telescope has demonstrated less than 0.2 waves P-V in the visible wavefront change over +50 C to -200 C temperature range. SSG has also fabricated a SiC truss structural assembly and successfully qualified this hardware at environmental levels greater than 3 times higher than normal Delta, Titan, and ARIES launch loads. SSG is currently developing two SiC telescopes; an 20 cm diameter off-axis 3 mirror re-imaging and a 60 cm aperture on-axis 3 mirror re-imager. Both hardware developments will be tested to flight level environmental, optical, and thermal specifications.

  19. Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

    NASA Astrophysics Data System (ADS)

    Sakwe, S. A.; Müller, R.; Wellmann, P. J.

    2006-04-01

    We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

  20. An allosteric conduit facilitates dynamic multisite substrate recognition by the SCFCdc4 ubiquitin ligase

    NASA Astrophysics Data System (ADS)

    Csizmok, Veronika; Orlicky, Stephen; Cheng, Jing; Song, Jianhui; Bah, Alaji; Delgoshaie, Neda; Lin, Hong; Mittag, Tanja; Sicheri, Frank; Chan, Hue Sun; Tyers, Mike; Forman-Kay, Julie D.

    2017-01-01

    The ubiquitin ligase SCFCdc4 mediates phosphorylation-dependent elimination of numerous substrates by binding one or more Cdc4 phosphodegrons (CPDs). Methyl-based NMR analysis of the Cdc4 WD40 domain demonstrates that Cyclin E, Sic1 and Ash1 degrons have variable effects on the primary Cdc4WD40 binding pocket. Unexpectedly, a Sic1-derived multi-CPD substrate (pSic1) perturbs methyls around a previously documented allosteric binding site for the chemical inhibitor SCF-I2. NMR cross-saturation experiments confirm direct contact between pSic1 and the allosteric pocket. Phosphopeptide affinity measurements reveal negative allosteric communication between the primary CPD and allosteric pockets. Mathematical modelling indicates that the allosteric pocket may enhance ultrasensitivity by tethering pSic1 to Cdc4. These results suggest negative allosteric interaction between two distinct binding pockets on the Cdc4WD40 domain may facilitate dynamic exchange of multiple CPD sites to confer ultrasensitive dependence on substrate phosphorylation.

  1. Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

    2015-01-01

    This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

  2. Measurement of Young's modulus and residual stress of thin SiC layers for MEMS high temperature applications

    NASA Astrophysics Data System (ADS)

    Pabst, Oliver; Schiffer, Michael; Obermeier, Ernst; Tekin, Tolga; Lang, Klaus Dieter; Ngo, Ha-Duong

    2011-06-01

    Silicon carbide (SiC) is a promising material for applications in harsh environments. Standard silicon (Si) microelectromechanical systems (MEMS) are limited in operating temperature to temperatures below 130 °C for electronic devices and below 600 °C for mechanical devices. Due to its large bandgap SiC enables MEMS with significantly higher operating temperatures. Furthermore, SiC exhibits high chemical stability and thermal conductivity. Young's modulus and residual stress are important mechanical properties for the design of sophisticated SiC-based MEMS devices. In particular, residual stresses are strongly dependent on the deposition conditions. Literature values for Young's modulus range from 100 to 400 GPa, and residual stresses range from 98 to 486 MPa. In this paper we present our work on investigating Young's modulus and residual stress of SiC films deposited on single crystal bulk silicon using bulge testing. This method is based on measurement of pressure-dependent membrane deflection. Polycrystalline as well as single crystal cubic silicon carbide samples are studied. For the samples tested, average Young's modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples, the according values are 388 GPa and 217 MPa. These results compare well with literature values.

  3. High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

    NASA Astrophysics Data System (ADS)

    Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

    2017-12-01

    In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

  4. Fabrication and Mechanical Behavior of Ex Situ Mg-Based Bulk Metallic Glass Matrix Composite Reinforced with Electroless Cu-Coated SiC Particles.

    PubMed

    Wang, Xin; Zhao, Lichen; Hu, Ximei; Cheng, Yongjian; Liu, Shuiqing; Chen, Peng; Cui, Chunxiang

    2017-11-30

    Magnesium-based bulk metallic glass matrix composites (BMGMCs) have better plasticity than the corresponding bulk metallic glasses (BMGs); however, their strength and density are often compromised due to the fact that the effective reinforcement phase is mostly plastic heavy metal. For lightweight SiC-particle reinforced BMGMCs, interface wettability and the sharpness of the particles often reduce the strengthening effect. In this work, SiC particles were coated with a thin Cu coating by electroless plating, and added to Mg 54 Cu 26.5 Ag 8.5 Gd 11 melt in an amount of 5 wt % to prepare a BMGMC. The microstructure of the interface, mechanical behavior and fracture morphology of the BMGMC were studied by scanning electron microscopy and quasi-static compression testing. The results showed that the Cu coating improved the wettability between SiC and the matrix alloy without obvious interfacial reactions, leading to the dispersion of SiC particles in the matrix. The addition of Cu-coated SiC particles improved the plastic deformation ability of Mg 54 Cu 26.5 Ag 8.5 Gd 11 BMG, proving that electroless plating was an effective method for controlling the interface microstructure and mechanical behavior of BMGMCs.

  5. Deposition of BN interphase coatings from B-trichloroborazine and its effects on the mechanical properties of SiC/SiC composites

    NASA Astrophysics Data System (ADS)

    Wu, Haitang; Chen, Mingwei; Wei, Xi; Ge, Min; Zhang, Weigang

    2010-12-01

    Boron nitride thin films were deposited on silicon carbide fibers by chemical vapor deposition at atmospheric pressure from the single source precursor B-trichloroborazine (Cl 3B 3N 3H 3, TCB). The film growth and structure, as a function of deposition temperature, hydrogen gas flow rate, and deposition time, were discussed. The deposition rate reaches a maximum at 1000 °C, then decreases with the increasing of temperature, and the apparent activation energy of the reaction is 127 kJ/mol. Above 1000 °C, gas-phase nucleation determines the deposition process. The deposited BN films were characterized by Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effect of BN interphase on the mechanical properties of the unidirectional SiC fiber-reinforced SiC matrix (SiC/SiC) composites was also investigated. The results show that the flexural strength of SiC/SiC composites with and without coating is 276 MPa and 70 MPa, respectively, which indicates that BN interphase coating deposited from B-trichloroborazine precursor can effectively adjust the fiber/matrix interface, thus causing a dramatic increase in the mechanical properties of the composites.

  6. Quantitative determination of airborne respirable non-fibrous alpha-silicon carbide by x-ray powder diffractometry.

    PubMed

    Bye, E; Føreland, S; Lundgren, L; Kruse, K; Rønning, R

    2009-06-01

    The purpose of the present investigation was to establish a method for the determination of airborne respirable non-fibrous silicon carbide (SiC). The main application is within the industrial production of SiC. Due to the complex airborne aerosol mixture of crystalline compounds in the SiC industry, X-ray powder diffractometry was selected as the most appropriate method. Without any international standard material for the respirable fraction of non-fibrous SiC, pure and suitable products from three SiC plants in Norway were selected. These products have a median particle diameter in the range 4.4-5.1 mum. The method is based on thin sample technique, with the dust deposited on a polycarbonate filter. Absorption correction is done by standard procedures with the use of a silver filter, situated below the polycarbonate filter. The diffraction line used for quantitative determination was selected carefully. This was done to avoid interferences from quartz, cristobalite, and graphite, which all are airborne components present in the atmosphere during the industrial process. The instrumental limit of detection for the method is 12 microg. This method has been used to determine airborne non-fibrous SiC in a comprehensive ongoing project in the Norwegian SiC industry for further epidemiological studies. The method is fully applicable for compliance work.

  7. Rapid degradation of azo dye Direct Black BN by magnetic MgFe2O4-SiC under microwave radiation

    NASA Astrophysics Data System (ADS)

    Gao, Jia; Yang, Shaogui; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

    2016-08-01

    A novel microwave (MW) catalyst, MgFe2O4 loaded on SiC (MgFe2O4-SiC), was successfully synthesized by sol-gel method, and pure MgFe2O4 was used as reference. The MgFe2O4 and MgFe2O4-SiC catalysts were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N2 adsorption analyzer (BET specific surface area), X-ray photoelectron spectroscopy (XPS). The electromagnetic parameters of the prepared catalysts were measured by vector network analyzer. The reflection loss (RL) based on the electromagnetic parameters calculated in Matlab showed MgFe2O4-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range, revealing the excellent MW absorption property of MgFe2O4-SiC. MW-induced degradation of Direct Black BN (DB BN) over as-synthesized MgFe2O4-SiC indicated that degradation efficiency of DB BN (20 mg L-1) in 5 min reached 96.5%, the corresponding TOC removal was 65%, and the toxicity of DB BN after degradation by MgFe2O4-SiC obviously decreased. The good stability and applicability of MgFe2O4-SiC on the degradation process were also discovered. Moreover, the ionic chromatogram during degradation of DB BN demonstrated that the C-S, C-N and azo bonds in the DB BN molecule were destroyed gradually. MW-induced rad OH and holes could be responsible for the efficient removal involved in the system. These findings make MgFe2O4-SiC become an excellent MW absorbent as well as an effective MW catalyst with rapid degradation of DB BN. Therefore, it may be promising for MgFe2O4-SiC under MW radiation to deal with various dyestuffs and other toxic organic pollutants.

  8. Recycling silicon wire-saw slurries: separation of silicon and silicon carbide in a ramp settling tank under an applied electrical field.

    PubMed

    Tsai, Tzu-Hsuan; Shih, Yu-Pei; Wu, Yung-Fu

    2013-05-01

    The growing demand for silicon solar cells in the global market has greatly increased the amount of silicon sawing waste produced each year. Recycling kerf Si and SiC from sawing waste is an economical method to reduce this waste. This study reports the separation of Si and SiC using a ramp settling tank. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. The agreement between experimental results and predicted results shows that the particles traveled a short distance to reach the collection port in the ramp tank. Consequently, the time required for tiny particles to hit the tank bottom decreased, and the interference caused by the dispersion between particles and the fluid motion during settling decreased. In the ramp tank, the highest purities of the collected SiC and Si powders were 95.2 and 7.01 wt%, respectively. Using a ramp tank, the recycling fraction of Si-rich powders (SiC < 15 wt%) reached 22.67% (based on the whole waste). This fraction is greater than that achieved using rectangular tanks. Recycling Si and SiC abrasives from the silicon sawing waste is regarded as an economical solution to reduce the sawing waste. However, the separation of Si and SiC is difficult. This study reports the separation of Si and SiC using a ramp settling tank under an applied electrical field. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. Compared with the rectangular tanks, the recycling fraction of Si-rich powders using a ramp tank is greater, and the proposed ramp settling tank is more suitable for industrial applications.

  9. Wear Behaviour of Al-6061/SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

    2017-04-01

    Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

  10. Reactional mechanisms of the chemical vapour deposition of SiC-based ceramics from {CH3SiCl3}/{H2} gas precursor

    NASA Astrophysics Data System (ADS)

    Loumagne, F.; Langlais, F.; Naslain, R.

    1995-10-01

    The kinetics of SiC-based ceramics deposition from CH 3SiCl 3{( MTS) }/{H2} gas precursor has been investigated over a range of reduced pressure and low temperature, where kinetics are controlled by chemical reactions. Overall kinetic laws have been determined from the measurement of the apparent activation energy and the influence of MTS, H 2, CH 4 and HCl. The kinetics of SiC deposition highly depends on both the dilution ratio α = {P H2}/{P MTS} and the total pressure. For 3 ≤ α ≤ 10 and T = 825°C, the reaction order with respect to MTS equals 2. At T = 925°C, it becomes nil in the low pressure range and 1 for P ≥ 10 kPa, whereas at 825 and 925°C, PH 2 has no influence on the growth rate. The apparent reaction orders are explained on the basis of a Langmuir-Hinshelwood model. The limiting step is evidenced as being HCl elimination by both SiCl and CH bonds breaking.

  11. A process economic assessment of hydrocarbon biofuels production using chemoautotrophic organisms

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Khan, NE; Myers, JA; Tuerk, AL

    Economic analysis of an ARPA-e Electrofuels (http://arpa-e.energy.gov/?q=arpa-e-programs/electrofuels) process is presented, utilizing metabolically engineered Rhodobacter capsulatus or Ralstonia eutropha to produce the C30+ hydrocarbon fuel, botryococcene, from hydrogen, carbon dioxide, and oxygen. The analysis is based on an Aspen plus (R) bioreactor model taking into account experimentally determined Rba. capsulatus and Rls. eutropha growth and maintenance requirements, reactor residence time, correlations for gas-liquid mass-transfer coefficient, gas composition, and specific cellular fuel productivity. Based on reactor simulation results encompassing technically relevant parameter ranges, the capital and operating costs of the process were estimated for 5000 bbl-fuel/day plant and used to predict fuelmore » cost. Under the assumptions used in this analysis and crude oil prices, the Levelized Cost of Electricity (LCOE) required for economic feasibility must be less than 2(sic)/kWh. While not feasible under current market prices and costs, this work identifies key variables impacting process cost and discusses potential alternative paths toward economic feasibility. (C) 2014 Elsevier Ltd. All rights reserved.« less

  12. Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yoshimura, Satoru, E-mail: yosimura@ppl.eng.osaka-u.ac.jp; Sugimoto, Satoshi; Kiuchi, Masato

    2016-03-14

    We have proposed an experimental methodology which makes it possible to deposit silicon carbide (SiC) films on Si substrates with a low-energy mass-selected ion beam system using hexamethyldisilane (HMD) as a gas source. In this study, one of the fragment ions produced from HMD, SiCH{sub 4}{sup +}, was mass-selected. The ion energy was approximately 100 eV. Then, the SiCH{sub 4}{sup +} ions were irradiated to a Si(100) substrate. When the temperature of the Si substrate was set at 800 °C during the ion irradiation, the X-ray diffraction and Raman spectroscopy of the substrate following the completion of ion irradiation experiment demonstrated themore » occurrence of 3C-SiC deposition.« less

  13. Fission product palladium-silicon carbide interaction in htgr fuel particles

    NASA Astrophysics Data System (ADS)

    Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

    1990-07-01

    Interaction of fission product palladium (Pd) with the silicon carbide (SiC) layer was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors (HTGR) with an optical microscope and electron probe microanalyzers. The SiC layers were attacked locally or the reaction product formed nodules at the attack site. Although the main element concerned with the reaction was palladium, rhodium and ruthenium were also detected at the corroded areas in some particles. Palladium was detected on both the hot and cold sides of the particles, but the corroded areas and the palladium accumulations were distributed particularly on the cold side of the particles. The observed Pd-SiC reaction depths were analyzed on the assumption that the release of palladium from the fuel kernel controls the whole Pd-SiC reaction.

  14. Electrolytes with Improved Safety Developed for High Specific Energy Li-Ion Cells with Si-Based Anodes

    NASA Technical Reports Server (NTRS)

    Smart, M. C.; Krause, F. C.; Hwang, C.; Soler, J.; West, W. C.; Ratnakumar, B. V.; Prakash, G. K. S.

    2012-01-01

    A number of electrolyte formulations that have improved safety characteristics have been developed for use with high capacity silicon-based anodes. To improve the compatibility with Si-based anodes, a number of technical approaches have been employed, including: (1) the use of mono-fluoroethylene carbonate (FEC) in conjunction with, or in lieu of, ethylene carbonate (EC), (2) the use of high proportions of fluorinated co-solvents, (3) the use of vinylene carbonate (VC) to stabilize the Si/C electrode, and (4) the use of lithium bis(oxalato)borate (LiBOB) to improve the compatibility of the electrolyte when Si/C electrodes are used in conjunction with high voltage cathodes. Candidate electrolytes were studied in Li/Si-C and Si-C/ Li(MnNiCo)O2 (NMC) coin cells, as well as in larger Si-C/NMC three-electrode cells equipped with lithium reference electrodes. In summary, many electrolytes that contain triphenyl phosphate (TPP), which is used as a flame retardant additive up to concentrations of 15 volume percent, and possess FEC as a co-solvent have been demonstrated to outperform the all-carbonate baseline electrolytes when evaluated in Si-C/ Li(MnNiCo)O2 cells.

  15. High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

    2015-01-01

    Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

  16. Oxidation resistance, thermal conductivity, and spectral emittance of fully dense zirconium diboride with silicon carbide and tantalum diboride additives

    NASA Astrophysics Data System (ADS)

    Van Laningham, Gregg Thomas

    Zirconium diboride (ZrB2) is a ceramic material possessing ultra-high melting temperatures. As such, this compound could be useful in the construction of thermal protection systems for aerospace applications. This work addresses a primary shortcoming of this material, namely its propensity to destructively oxidize at high temperatures, as well as secondary issues concerning its heat transport properties. To characterize and improve oxidation properties, thermogravimetric studies were performed using a specially constructed experimental setup. ZrB 2-SiC two-phase ceramic composites were isothermally oxidized for ~90 min in flowing air in the range 1500-1900°C. Specimens with 30 mol% SiC formed distinctive reaction product layers which were highly protective; 28 mol% SiC - 6 mol% TaB2 performed similarly. At higher temperatures, specimens containing lower amounts of SiC were shown to be non-protective, whereas specimens containing greater amounts of SiC produced unstable oxide layers due to gas evolution. Oxide coating thicknesses calculated from weight loss data were consistent with those measured from SEM micrographs. In order to characterize one aspect of the materials' heat transport properties, the thermal diffusivities of ZrB2-SiC composites were measured using the laser flash technique. These were converted to thermal conductivities using temperature dependent specific heat and density data; thermal conductivity decreased with increasing temperature over the range 25-2000°C. The composition with the highest SiC content showed the highest thermal conductivity at room temperature, but the lowest at temperatures in excess of ~400°C, because of the greater temperature sensitivity of the thermal conductivity of the SiC phase, as compared to more electrically-conductive ZrB2. Subsequent finite difference calculations were good predictors of multi-phase thermal conductvities for the compositions examined. The thermal conductivities of pure ZrB2 as a function of temperature were back-calculated from the experimental results for the multi-phase materials, and literature thermal conductivities of the other two phases. This established a relatively constant thermal conductivity of 88-104 W·K over the evaluated temperature range. Further heat transport characterization was performed using pre-oxidized, directly resistively heated ZrB2-30 mol% SiC ribbon specimens under the observation of a spectral radiometer. The ribbons were heated and held at specific temperatures over the range 1100-1330°C in flowing Ar, and normal spectral emittance values were recorded over the 1-6 μm range with a resolution of 10 nm. The normal spectral emittance was shown to decrease with loss of the borosilicate layer over the course of the data collection time periods. This change was measured and compensated for to produce traces showing the emittance of the oxidized composition rising from ~0.7 to ~0.9 over the range of wavelengths measured (1-6 μm).

  17. Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

    NASA Astrophysics Data System (ADS)

    Virshup, Ariel R.

    With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

  18. Dual-Layer Oxidation-Protective Plasma-Sprayed SiC-ZrB2/Al2O3-Carbon Nanotube Coating on Graphite

    NASA Astrophysics Data System (ADS)

    Ariharan, S.; Sengupta, Pradyut; Nisar, Ambreen; Agnihotri, Ankur; Balaji, N.; Aruna, S. T.; Balani, Kantesh

    2017-02-01

    Graphite is used in high-temperature gas-cooled reactors because of its outstanding irradiation performance and corrosion resistance. To restrict its high-temperature (>873 K) oxidation, atmospheric-plasma-sprayed SiC-ZrB2-Al2O3-carbon nanotube (CNT) dual-layer coating was deposited on graphite substrate in this work. The effect of each layer was isolated by processing each component of the coating via spark plasma sintering followed by isothermal kinetic studies. Based on isothermal analysis and the presence of high residual thermal stress in the oxide scale, degradation appeared to be more severe in composites reinforced with CNTs. To avoid the complexity of analysis of composites, the high-temperature activation energy for oxidation was calculated for the single-phase materials only, yielding values of 11.8, 20.5, 43.5, and 4.5 kJ/mol for graphite, SiC, ZrB2, and CNT, respectively, with increased thermal stability for ZrB2 and SiC. These results were then used to evaluate the oxidation rate for the composites analytically. This study has broad implications for wider use of dual-layer (SiC-ZrB2/Al2O3) coatings for protecting graphite crucibles even at temperatures above 1073 K.

  19. Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

    NASA Astrophysics Data System (ADS)

    Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

    2017-10-01

    A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

  20. An audit of the knowledge and attitudes of doctors towards Surgical Informed Consent (SIC).

    PubMed

    Ashraf, Bushra; Tasnim, Nasira; Saaiq, Muhammad; Zaman, Khaleeq-Uz-

    2014-11-01

    The Surgical Informed Consent (SIC) is a comprehensive process that establishes an information-based agreement between the patient and his doctor to undertake a clearly outlined medical or surgical intervention. It is neither a casual formality nor a casually signed piece of paper. The present study was designed to audit the current knowledge and attitudes of doctors towards SIC at a tertiary care teaching hospital in Pakistan. This cross-sectional qualitative investigation was conducted under the auspices of the Department of Medical Education (DME), Pakistan Institute of Medical Sciences (PIMS), Shaheed Zulfiqar Ali Bhutto Medical University (SZABMU), Islamabad over three months period. A 19-item questionnaire was employed for data collection. The participants were selected at random from the list of the surgeons maintained in the hospital and approached face-to-face with the help of a team of junior doctors detailed for questionnaire distribution among them. The target was to cover over 50% of these doctors by convenience sampling. Out of 231 respondents, there were 32 seniors while 199 junior doctors, constituting a ratio of 1:6.22. The respondents variably responded to the questions regarding various attributes of the process of SIC. Overall, the junior doctors performed poorer compared to the seniors. The knowledge and attitudes of our doctors particularly the junior ones, towards the SIC are less than ideal. This results in their failure to avail this golden opportunity of doctor-patient communication to guide their patients through a solidly informative and legally valid SIC. They are often unaware of the essential preconditions of the SIC; provide incomplete information to their patients; and quite often do not ensure direct involvement of their patients in the process. Additionally they lack an understanding of using interactive computer-based programs as well as the concept of nocebo effect of informed consent.

  1. Atmospheric forcing of sea ice anomalies in the Ross Sea Polynya region

    NASA Astrophysics Data System (ADS)

    Dale, Ethan; McDonald, Adrian; Rack, Wolfgang

    2016-04-01

    Despite warming trends in global temperatures, sea ice extent in the southern hemisphere has shown an increasing trend over recent decades. Wind-driven sea ice export from coastal polynyas is an important source of sea ice production. Areas of major polynyas in the Ross Sea, the region with largest increase in sea ice extent, have been suggested to produce the vast amount of the sea ice in the region. We investigate the impacts of strong wind events on polynyas and the subsequent sea ice production. We utilize Bootstrap sea ice concentration (SIC) measurements derived from satellite based, Special Sensor Microwave Imager (SSM/I) brightness temperature images. These are compared with surface wind measurements made by automatic weather stations of the University of Wisconsin-Madison Antarctic Meteorology Program. Our analysis focusses on the winter period defined as 1st April to 1st November in this study. Wind data was used to classify each day into characteristic regimes based on the change of wind speed. For each regime, a composite of SIC anomaly was formed for the Ross Sea region. We found that persistent weak winds near the edge of the Ross Ice Shelf are generally associated with positive SIC anomalies in the Ross Sea polynya area (RSP). Conversely we found negative SIC anomalies in this area during persistent strong winds. By analyzing sea ice motion vectors derived from SSM/I brightness temperatures, we find significant sea ice motion anomalies throughout the Ross Sea during strong wind events. These anomalies persist for several days after the strong wing event. Strong, negative correlations are found between SIC within the RSP and wind speed indicating that strong winds cause significant advection of sea ice in the RSP. This rapid decrease in SIC is followed by a more gradual recovery in SIC. This increase occurs on a time scale greater than the average persistence of strong wind events and the resulting Sea ice motion anomalies, highlighting the production of new sea ice through thermodynamic processes.

  2. SIC-POVMS and MUBS: Geometrical Relationships in Prime Dimension

    NASA Astrophysics Data System (ADS)

    Appleby, D. M.

    2009-03-01

    The paper concerns Weyl-Heisenberg covariant SIC-POVMs (symmetric informationally complete positive operator valued measures) and full sets of MUBs (mutually unbiased bases) in prime dimension. When represented as vectors in generalized Bloch space a SIC-POVM forms a d2-1 dimensional regular simplex (d being the Hilbert space dimension). By contrast, the generalized Bloch vectors representing a full set of MUBs form d+1 mutually orthogonal d-1 dimensional regular simplices. In this paper we show that, in the Weyl-Heisenberg case, there are some simple geometrical relationships between the single SIC-POVM simplex and the d+1 MUB simplices. We go on to give geometrical interpretations of the minimum uncertainty states introduced by Wootters and Sussman, and by Appleby, Dang and Fuchs, and of the fiduciality condition given by Appleby, Dang and Fuchs.

  3. Theoretical prediction of a novel inorganic fullerene-like family of silicon-carbon materials

    NASA Astrophysics Data System (ADS)

    Wang, Ruoxi; Zhang, Dongju; Liu, Chengbu

    2005-08-01

    In an effort to search for new inorganic fullerene-like structures, we designed a series of novel silicon-carbon cages, (SiC) n ( n = 6-36), based on the uniformly hybrid Si-C four- and six-membered-rings, and researched their geometrical and electronic structures, as well as their relative stabilities using the density function theory. Among these cages, the structures for n = 12, 16, and 36 were found to been energetically more favorable. The calculated disproportionation energy and binding energy per SiC unit show that the (SiC) 12 cage is the most stable one among these designed structures. The present calculations not only indicate that silicon-carbon fullerenes are promised to be synthesized in future, but also provide a new way for stabilizing silicon cages by uniformly doping carbon atoms into silicon structures.

  4. Lung cancer incidence among Norwegian silicon carbide industry workers: associations with particulate exposure factors

    PubMed Central

    Kjærheim, Kristina; Føreland, Solveig; Eduard, Wijnand; Kjuus, Helge

    2012-01-01

    Objectives An increased lung cancer risk associated with total dust exposure in the silicon carbide (SiC) industry has previously been reported. The aim of the present study was to examine the relative importance of specific exposure factors by using a comprehensive, historic job exposure matrix based on about 8000 measurements. Methods Cumulative exposure to total and respirable dust, respirable quartz, cristobalite, and SiC particles and SiC fibres was assessed for 1687 long-term workers employed during 1913–2003 in the Norwegian SiC industry. Standardised incidence ratios for lung cancer, with follow-up during 1953–2008, were calculated stratified by cumulative exposure categories. Poisson regression analyses were performed using both categorised and log-transformed cumulative exposure variables. Results The lung cancer incidence was about twofold increased at the highest level of exposure to each of the exposure factors (standardised incidence ratios 1.9–2.3 for all agents). Internal analyses showed associations between exposure level and lung cancer incidence for all investigated factors, but a significant trend only for total dust and cristobalite. In multivariate analyses, cristobalite showed the most consistent associations, followed by SiC fibres. Conclusions The results indicated that crystalline silica in the form of cristobalite was the most important occupational exposure factor responsible for lung cancer excess in the Norwegian SiC industry. SiC fibres seemed to have an additional effect. PMID:22611173

  5. CTE homogeneity, isotropy and reproducibility in large parts made of sintered SiC

    NASA Astrophysics Data System (ADS)

    Bougoin, Michel; Castel, Didier; Levallois, Franck

    2017-11-01

    For Herschel SiC primary mirror purpose, a new approach of comparative CTE measurement has been developed; it is based on the well known bimetallic effect ("biceramic" in this case) and also optical measurements. This method offers a good CTE comparison capability in the range of 170-420K (extensible to 5-420K) depending of the thermal test facilities performance, with a resolution of only 0.001 μm/m.K. The Herschel primary mirror is made of 12 SiC segments which are brazed together. The CTE of each segment has been compared with the one of a witness sample and no visible change, higher than the measurement accuracy, has been observed. Furthermore, a lot of samples have been cut out from a spare segment, from different places and also from all X, Y and Z direction of the reference frame. No deviation was seen in all of these tests, thus demonstrating the very good homogeneity, reproducibility and isotropy of the Boostec® SiC material. Some recent literature about SiC material measurements at cryogenic temperature shows a better behaviour of Boostec® SiC material in comparison with other kind of SiC which are also candidate for space optics, in particular for isotropy purpose. After a review of the available literature, this paper describes the comparative CTE measurement method and details the results obtained during the measurement campaigns related to Herschel project.

  6. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  7. Friction and wear of oxide-ceramic sliding against IN-718 nickel base alloy at 25 to 800 C in atmospheric air

    NASA Technical Reports Server (NTRS)

    Sliney, Harold E.; Deadmore, Daniel L.

    1989-01-01

    The friction and wear of oxide-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C were measured. The oxide materials tested were mullite (3Al2O3.2SiO2); lithium aluminum silicate (LiAlSi(x)O(y)); polycrystalline monolithic alpha alumina (alpha-Al2O3); single crystal alpha-Al2O3 (sapphire); zirconia (ZrO2); and silicon carbide (SiC) whisker-reinforced Al2O3 composites. At 25 C the mullite and zirconia had the lowest friction and the polycrystalline monolithic alumina had the lowest wear. At 800 C the Al2O3-8 vol/percent SiC whisker composite had the lowest friction and the Al2O3-25 vol/percent SiC composite had the lowest wear. The friction of the Al2O3-SiC whisker composites increased with increased whisker content while the wear decreased. In general, the wear-resistance of the ceramics improve with their hardness.

  8. Effect of neutron irradiation on defect evolution in Ti 3SiC 2 and Ti 2AlC

    DOE PAGES

    Tallman, Darin J.; He, Lingfeng; Garcia-Diaz, Brenda L.; ...

    2015-10-23

    Here, we report on the characterization of defects formed in polycrystalline Ti 3SiC 2 and Ti 2AlC samples exposed to neutron irradiation – up to 0.1 displacements per atom (dpa) at 350 ± 40 °C or 695 ± 25 °C, and up to 0.4 dpa at 350 ± 40 °C. Black spots are observed in both Ti 3SiC 2 and Ti 2AlC after irradiation to both 0.1 and 0.4 dpa at 350 °C. After irradiation to 0.1 dpa at 695 °C, small basal dislocation loops, with a Burgers vector of b = 1/2 [0001] are observed in both materials. Atmore » 9 ± 3 and 10 ± 5 nm, the loop diameters in the Ti 3SiC 2 and Ti 2AlC samples, respectively, were comparable. At 1 × 10 23 loops/m 3, the dislocation loop density in Ti 2AlC was ≈1.5 orders of magnitude greater than in Ti 3SiC 2, at 3 x 10 21 loops/m3. After irradiation at 350 °C, extensive microcracking was observed in Ti 2AlC, but not in Ti 3SiC 2. The room temperature electrical resistivities increased as a function of neutron dose for all samples tested, and appear to saturate in the case of Ti 3SiC 2. The MAX phases are unequivocally more neutron radiation tolerant than the impurity phases TiC and Al 2O 3. Based on these results, Ti 3SiC 2 appears to be a more promising MAX phase candidate for high temperature nuclear applications than Ti 2AlC.« less

  9. Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy

    DTIC Science & Technology

    2003-03-01

    conformally coated with SiC[2]...........................4 2.1: Silicon carbide grinding stones or “carborundum” [1...open up contact areas to SiC-2 (mask SiC2_SiC3_VIA). Then, a 1.5 µm- thick SiC “cap” layer (SiC-3) is deposited. Note that the SiC-3 conformally coats ...84 5.2: Surface profile across the teeth of a SiC3 comb drive...........................................85 xi

  10. Anodization Mechanism on SiC Nanoparticle Reinforced Al Matrix Composites Produced by Power Metallurgy.

    PubMed

    Ferreira, Sonia C; Conde, Ana; Arenas, María A; Rocha, Luis A; Velhinho, Alexandre

    2014-12-19

    Specimens of aluminum-based composites reinforced by silicon carbide nanoparticles (Al/SiC np ) produced by powder metallurgy (PM) were anodized under voltage control in tartaric-sulfuric acid (TSA). In this work, the influence of the amount of SiC np on the film growth during anodizing was investigated. The current density versus time response and the morphology of the porous alumina film formed at the composite surface are compared to those concerning a commercial aluminum alloy (AA1050) anodized under the same conditions. The processing method of the aluminum alloys influences the efficiency of the anodizing process, leading to a lower thicknesses for the unreinforced Al-PM alloy regarding the AA1050. The current density versus time response is strongly dependent on the amount of SiC np . The current peaks and the steady-state current density recorded at each voltage step increases with the SiC np volume fraction due to the oxidation of the SiC np . The formation mechanism of the anodic film on Al/SiC np composites is different from that occurring in AA1050, partly due the heterogeneous distribution of the reinforcement particles in the metallic matrix, but also to the entrapment of SiC np in the anodic film.

  11. Wafer-scale epitaxial graphene on SiC for sensing applications

    NASA Astrophysics Data System (ADS)

    Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

    2015-12-01

    The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

  12. Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode

    NASA Astrophysics Data System (ADS)

    Toyama, Toshihiko; Ichihara, Tokuyuki; Yamaguchi, Daisuke; Okamoto, Hiroaki

    2007-10-01

    Thin-film light emitting devices based on organic materials have been gathering attentions for applying a flat-panel display and a solid-state lighting. Alternatively, inorganic technologies such as Si-based thin-film technology have been growing almost independently. It is then expected that combining the Si-based thin-film technology with the organic light emitting diode (OLED) technology will develop innovative devices. Here, we report syntheses of the hybrid light emitting diode (LED) with a heterostructure consisting of p-type SiC x and tris-(8-hydroxyquinoline) aluminum films and characterization for the hybrid LEDs. We present the energy diagram of the heterostructure, and describe that the use of high dark conductivities of the p-type SiC x as well as inserting wide-gap intrinsic a-SiC x at the p-type SiC x/Alq interface are effective for improving device performance.

  13. Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

    NASA Astrophysics Data System (ADS)

    Yu, Min; Hua, Junwei

    2017-07-01

    The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

  14. Radiative enhancement of tube-side heat transfer.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Im, K. H.; Ahluwalia, R. K.; Engineering Physics

    1994-01-01

    The potential of augmenting film coefficient by uniformly dispersing thin metallic/ceramic filaments oriented longitudinally along a tube is investigated. The purpose of the rigidly held filaments is to create a participating medium from a gas otherwise transparent to thermal radiation. The filaments absorb the thermal radiation emitted by the tube and transfer the heat convectively to the flowing gas. Wave theory shows that optical thickness > 10 can be achieved with 50 {micro}m SiC filaments at 300 cm{sup 2} number density in a 2.54 cm diameter tube. Solution of the radiation transport equation indicates that the radiative film coefficients aremore » a function of filament material, diameter and number density, and gas and surface temperatures.« less

  15. SiC: An Agent Based Architecture for Preventing and Detecting Attacks to Ubiquitous Databases

    NASA Astrophysics Data System (ADS)

    Pinzón, Cristian; de Paz, Yanira; Bajo, Javier; Abraham, Ajith; Corchado, Juan M.

    One of the main attacks to ubiquitous databases is the structure query language (SQL) injection attack, which causes severe damages both in the commercial aspect and in the user’s confidence. This chapter proposes the SiC architecture as a solution to the SQL injection attack problem. This is a hierarchical distributed multiagent architecture, which involves an entirely new approach with respect to existing architectures for the prevention and detection of SQL injections. SiC incorporates a kind of intelligent agent, which integrates a case-based reasoning system. This agent, which is the core of the architecture, allows the application of detection techniques based on anomalies as well as those based on patterns, providing a great degree of autonomy, flexibility, robustness and dynamic scalability. The characteristics of the multiagent system allow an architecture to detect attacks from different types of devices, regardless of the physical location. The architecture has been tested on a medical database, guaranteeing safe access from various devices such as PDAs and notebook computers.

  16. Model for the formation of silicon carbide from the pyrolysis of dichlorodimethylsilane in hydrogen. I - Silicon formation from chlorosilanes. II - Silicon carbide formation from silicon and methane

    NASA Technical Reports Server (NTRS)

    Cagliostro, Domenick E.; Riccitiello, Salvatore R.

    1993-01-01

    In the first part of this work, a model is developed for the deposition of silicon from the reduction of silicon tetrachloride with hydrogen in a tubular reactor at 700-1100 C, at atmospheric pressure. The model is based on gas chromatography of the volatile products of the reaction, followed by gravimetric analysis of total Si deposition on the tube. In the second part of this work, a model is developed for the case of SiC deposition from the pyrolysis of dichlorodimethylsilane in hydrogen under the same reactor conditions. The rate constants derived from a nonlinear regression analysis are reported.

  17. Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu

    2003-01-01

    A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

  18. Characterization of Ultra-high Temperature Ceramics via Transmission Electron Microscopy Relevant ZrB2-based Composites, TaC-based Composites and Oxides Containing SiC Chopped Fibers

    DTIC Science & Technology

    2015-03-06

    was formed by ZrO2 rounded grains containing W traces and covered by H3BO3 acicular crystals deriving from hydration of B2O3 after exposure to...TaSi2 grains tended to form large pockets as wide as 3-8 m. Other spurious phases formed upon decomposition of the additive, were identified as SiC

  19. Alumina Based 500 C Electronic Packaging Systems and Future Development

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu

    2012-01-01

    NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

  20. Study of Erosive Wear Behaviour on SIC/SIC Composites

    NASA Astrophysics Data System (ADS)

    Suh, Min-Soo

    In the field of aerospace propulsion system, erosive wear on continuous silicon carbide (SiC) fibre-reinforced SiC (SiC/SiC) composites is of significant issue to achieve high energy efficiency. This paper proposes a crucial factor and a design guideline of SiC/SiC composites for higher erosion performance regarding cost effectiveness. Fabrication and evaluation of impacts and wear on SiC/SiC composites are successfully carried out. Erosive wear behaviours of the CVI and the LPS composites evidently show that the crucial fabrication factor against solid particle erosion (SPE). Erosive wear mechanisms on various SiC/SiC composites are determined based on the analysis of erosive wear behaviour. Designing guideline for the SiC/SiC composites for pursuit of high erosion performance is also proposed as focusing on the followings; volume fraction of matrix, strength of the matrix, bonding strength, and PyC interface.

  1. Identification of dominant scattering mechanism in epitaxial graphene on SiC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Jingjing; Guo, Liwei, E-mail: lwguo@iphy.ac.cn, E-mail: chenx29@aphy.iphy.ac.cn; Jia, Yuping

    2014-05-05

    A scheme of identification of scattering mechanisms in epitaxial graphene (EG) on SiC substrate is developed and applied to three EG samples grown on SiC (0001), (112{sup ¯}0), and (101{sup ¯}0) substrates. Hall measurements combined with defect detection technique enable us to evaluate the individual contributions to the carrier scatterings by defects and by substrates. It is found that the dominant scatterings can be due to either substrate or defects, dependent on the substrate orientations. The EG on SiC (112{sup ¯}0) exhibits a better control over the two major scattering mechanisms and achieves the highest mobility even with a highmore » carrier concentration, promising for high performance graphene-based electronic devices. The method developed here will shed light on major aspects in governing carrier transport in EG to harness it effectively.« less

  2. The Effect of Fiber Architecture on Matrix Cracking in Sic/sic Cmc's

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.

    2005-01-01

    Applications incorporating silicon carbide fiber reinforced silicon carbide matrix composites (CMC's) will require a wide range of fiber architectures in order to fabricate complex shape. The stress-strain response of a given SiC/SiC system for different architectures and orientations will be required in order to design and effectively life-model future components. The mechanism for non-linear stress-strain behavior in CMC's is the formation and propagation of bridged-matrix cracks throughout the composite. A considerable amount of understanding has been achieved for the stress-dependent matrix cracking behavior of SiC fiber reinforced SiC matrix systems containing melt-infiltrated Si. This presentation will outline the effect of 2D and 3D architectures and orientation on stress-dependent matrix-cracking and how this information can be used to model material behavior and serve as the starting point foe mechanistic-based life-models.

  3. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  4. Synthesis and design of silicide intermetallic materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has amore » number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.« less

  5. Assembly and Delivery of Rabbit Capsules for Irradiation of Silicon Carbide Cladding Tube Specimens in the High Flux Isotope Reactor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Koyanagi, Takaaki; Petrie, Christian M.

    Neutron irradiation of silicon carbide (SiC)-based fuel cladding under a high radial heat flux presents a critical challenge for SiC cladding concepts in light water reactors (LWRs). Fission heating in the fuel provides a high heat flux through the cladding, which, combined with the degraded thermal conductivity of SiC under irradiation, results in a large temperature gradient through the thickness of the cladding. The strong temperature dependence of swelling in SiC creates a complex stress profile in SiCbased cladding tubes as a result of differential swelling. The Nuclear Science User Facilities (NSUF) Program within the US Department of Energy Officemore » of Nuclear Energy is supporting research efforts to improve the scientific understanding of the effects of irradiation on SiC cladding tubes. Ultimately, the results of this project will provide experimental validation of multi-physics models for SiC-based fuel cladding during LWR operation. The first objective of this project is to irradiate tube specimens using a previously developed design that allows for irradiation testing of miniature SiC tube specimens subjected to a high radial heat flux. The previous “rabbit” capsule design uses the gamma heating in the core of the High Flux Isotope Reactor (HFIR) to drive a high heat flux through the cladding tube specimens. A compressible aluminum foil allows for a constant thermal contact conductance between the cladding tubes and the rabbit housing despite swelling of the SiC tubes. To allow separation of the effects of irradiation from those due to differential swelling under a high heat flux, a new design was developed under the NSUF program. This design allows for irradiation of similar SiC cladding tube specimens without a high radial heat flux. This report briefly describes the irradiation experiment design concepts, summarizes the irradiation test matrix, and reports on the successful delivery of six rabbit capsules to the HFIR. Rabbits of both low and high heat flux configurations have been assembled, welded, evaluated, and delivered to the HFIR along with a complete quality assurance fabrication package. These rabbits contain a wide variety of specimens including monolith tubes, SiC fiber SiC matrix (SiC/SiC) composites, duplex specimens (inner composite, outer monolith), and specimens with a variety of metallic or ceramic coatings on the outer surface. The rabbits are targeted for insertion during HFIR cycle 475, which is scheduled for September 2017.« less

  6. Advantages and Limits of 4H-SIC Detectors for High- and Low-Flux Radiations

    NASA Astrophysics Data System (ADS)

    Sciuto, A.; Torrisi, L.; Cannavò, A.; Mazzillo, M.; Calcagno, L.

    2017-11-01

    Silicon carbide (SiC) detectors based on Schottky diodes were used to monitor low and high fluxes of photons and ions. An appropriate choice of the epilayer thickness and geometry of the surface Schottky contact allows the tailoring and optimizing the detector efficiency. SiC detectors with a continuous front electrode were employed to monitor alpha particles in a low-flux regime emitted by a radioactive source with high energy (>5.0 MeV) or generated in an ion implanter with sub-MeV energy. An energy resolution value of 0.5% was measured in the high energy range, while, at energy below 1.0 MeV, the resolution becomes 10%; these values are close to those measured with a traditional silicon detector. The same SiC devices were used in a high-flux regime to monitor high-energy ions, x-rays and electrons of the plasma generated by a high-intensity (1016 W/cm2) pulsed laser. Furthermore, SiC devices with an interdigit Schottky front electrode were proposed and studied to overcome the limits of the such SiC detectors in the detection of low-energy (˜1.0 keV) ions and photons of the plasmas generated by a low-intensity (1010 W/cm2) pulsed laser. SiC detectors are expected to be a powerful tool for the monitoring of radioactive sources and ion beams produced by accelerators, for a complete characterization of radiations emitted from laser-generated plasmas at high and low temperatures, and for dosimetry in a radioprotection field.

  7. Optimization of a hybrid exchange-correlation functional for silicon carbides

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Oda, Takuji; Zhang, Yanwen; Weber, William J

    2013-01-01

    A hybrid exchange-correlation functional is optimized in order to accurately describe the nature of silicon carbides (SiC) in the framework of ab-initio calculations based on density functional theory (DFT), especially with an aim toward future applications in defect studies. It is shown that the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional with the screening parameter of 0.15 -1 outperforms conventional exchange-correlation functionals and other popular hybrid functionals regarding description of band structures in SiC. High transferability is proven through assessment over various SiC polytypes, silicon and diamond. Excellent performance is also confirmed for other fundamental material properties including elastic constants and phonon frequency.

  8. Feasibility of SiC composite structures for 1644 deg gas turbine seal applications

    NASA Technical Reports Server (NTRS)

    Darolia, R.

    1979-01-01

    The feasibility of silicon carbide composite structures was evaluated for 1644 K gas turbine seal applications. The silicon carbide composites evaluated consisted of Si/SiC Silcomp (Trademark) - and sintered silicon carbide as substrates, both with attached surface layers containing BN as an additive. A total of twenty-eight candidates with variations in substrate type and density, and layer chemistry, density, microstructure, and thickness were evaluated for abradability, cold particle erosion resistance, static oxidation resistance, ballistic impact resistance, and fabricability. The BN-free layers with variations in density and pore size were later added for evaluation. The most promising candidates were evaluated for Mach 1.0 gas oxidation/erosion resistance from 1477 K to 1644 K. The as-fabricated rub layers did not perform satisfactorily in the gas oxidation/erosion tests. However, preoxidation was found to be beneficial in improving the hot gas erosion resistance. Overall, the laboratory and rig test evaluations show that material properties are suitable for 1477 K gas turbine seal applications.

  9. A Review of Surgical Informed Consent: Past, Present, and Future. A Quest to Help Patients Make Better Decisions

    PubMed Central

    Keulers, Bram J.; Scheltinga, Marc R. M.; Spauwen, Paul H. M.; van der Wilt, Gert-Jan

    2010-01-01

    Background Informed consent (IC) is a process requiring a competent doctor, adequate transfer of information, and consent of the patient. It is not just a signature on a piece of paper. Current consent processes in surgery are probably outdated and may require major changes to adjust them to modern day legislation. A literature search may provide an opportunity for enhancing the quality of the surgical IC (SIC) process. Methods Relevant English literature obtained from PubMed, Picarta, PsycINFO, and Google between 1993 and 2009 was reviewed. Results The body of literature with respect to SIC is slim and of moderate quality. The SIC process is an underestimated part of surgery and neither surgeons nor patients sufficiently realize its importance. Surgeons are not specifically trained and lack the competence to guide patients through a legally correct SIC process. Computerized programs can support the SIC process significantly but are rarely used for this purpose. Conclusions IC should be integrated into our surgical practice. Unfortunately, a big gap exists between the theoretical/legal best practice and the daily practice of IC. An optimally informed patient will have more realistic expectations regarding a surgical procedure and its associated risks. Well-informed patients will be more satisfied and file fewer legal claims. The use of interactive computer-based programs provides opportunities to improve the SIC process. PMID:20372902

  10. On approximately symmetric informationally complete positive operator-valued measures and related systems of quantum states

    NASA Astrophysics Data System (ADS)

    Klappenecker, Andreas; Rötteler, Martin; Shparlinski, Igor E.; Winterhof, Arne

    2005-08-01

    We address the problem of constructing positive operator-valued measures (POVMs) in finite dimension n consisting of n2 operators of rank one which have an inner product close to uniform. This is motivated by the related question of constructing symmetric informationally complete POVMs (SIC-POVMs) for which the inner products are perfectly uniform. However, SIC-POVMs are notoriously hard to construct and, despite some success of constructing them numerically, there is no analytic construction known. We present two constructions of approximate versions of SIC-POVMs, where a small deviation from uniformity of the inner products is allowed. The first construction is based on selecting vectors from a maximal collection of mutually unbiased bases and works whenever the dimension of the system is a prime power. The second construction is based on perturbing the matrix elements of a subset of mutually unbiased bases. Moreover, we construct vector systems in Cn which are almost orthogonal and which might turn out to be useful for quantum computation. Our constructions are based on results of analytic number theory.

  11. Finite element analysis of metal matrix composite blade

    NASA Astrophysics Data System (ADS)

    Isai Thamizh, R.; Velmurugan, R.; Jayagandhan, R.

    2016-10-01

    In this work, compressor rotor blade of a gas turbine engine has been analyzed for stress, maximum displacement and natural frequency using ANSYS software for determining its failure strength by simulating the actual service conditions. Static stress analysis and modal analysis have been carried out using Ti-6Al-4V alloy, which is currently used in compressor blade. The results are compared with those obtained using Ti matrix composites reinforced with SiC. The advantages of using metal matrix composites in the gas turbine compressor blades are investigated. From the analyses carried out, it seems that composite rotor blades have lesser mass, lesser tip displacement and lower maximum stress values.

  12. Separation of Hydrogen from Carbon Dioxide through Porous Ceramics

    PubMed Central

    Shimonosono, Taro; Imada, Hikari; Maeda, Hikaru; Hirata, Yoshihiro

    2016-01-01

    The gas permeability of α-alumina, yttria-stabilized zirconia (YSZ), and silicon carbide porous ceramics toward H2, CO2, and H2–CO2 mixtures were investigated at room temperature. The permeation of H2 and CO2 single gases occurred above a critical pressure gradient, which was smaller for H2 gas than for CO2 gas. When the Knudsen number (λ/r ratio, λ: molecular mean free path, r: pore radius) of a single gas was larger than unity, Knudsen flow became the dominant gas transportation process. The H2 fraction for the mixed gas of (20%–80%) H2–(80%–20%) CO2 through porous Al2O3, YSZ, and SiC approached unity with decreasing pressure gradient. The high fraction of H2 gas was closely related to the difference in the critical pressure gradient values of H2 and CO2 single gas, the inlet mixed gas composition, and the gas flow mechanism of the mixed gas. Moisture in the atmosphere adsorbed easily on the porous ceramics and affected the critical pressure gradient, leading to the increased selectivity of H2 gas. PMID:28774051

  13. Current and future industrial energy service characterizations. Volume III. Energy data on 15 selected states' manufacturing subsector

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Krawiec, F.; Thomas, T.; Jackson, F.

    1980-11-01

    An examination is made of the current and future energy demands, and uses, and cost to characterize typical applications and resulting services in the US and industrial sectors of 15 selected states. Volume III presents tables containing data on selected states' manufacturing subsector energy consumption, functional uses, and cost in 1974 and 1976. Alabama, California, Illinois, Indiana, Louisiana, Michigan, Missouri, New Jersey, New York, Ohio, Oregon, Pennsylvania, Texas, West Virginia, and Wisconsin were chosen as having the greatest potential for replacing conventional fuel with solar energy. Basic data on the quantities, cost, and types of fuel and electric energy purchasedmore » by industr for heat and power were obtained from the 1974 and 1976 Annual Survey of Manufacturers. The specific indutrial energy servic cracteristics developed for each selected state include. 1974 and 1976 manufacturing subsector fuels and electricity consumption by 2-, 3-, and 4-digit SIC and primary fuel (quantity and relative share); 1974 and 1976 manufacturing subsector fuel consumption by 2-, 3-, and 4-digit SIC and primary fuel (quantity and relative share); 1974 and 1976 manufacturing subsector average cost of purchsed fuels and electricity per million Btu by 2-, 3-, and 4-digit SIC and primary fuel (in 1976 dollars); 1974 and 1976 manufacturing subsector fuels and electric energy intensity by 2-, 3-, and 4-digit SIC and primary fuel (in 1976 dollars); manufacturing subsector average annual growth rates of (1) fuels and electricity consumption, (2) fuels and electric energy intensity, and (3) average cost of purchased fuels and electricity (1974 to 1976). Data are compiled on purchased fuels, distillate fuel oil, residual ful oil, coal, coal, and breeze, and natural gas. (MCW)« less

  14. More than the sum of its parts? A merged satellite product from MODIS and AMSR2 sea ice concentration

    NASA Astrophysics Data System (ADS)

    Ludwig, V. S.; Istomina, L.; Spreen, G.

    2017-12-01

    Arctic sea ice concentration (SIC), the fraction of a grid cell that is covered by sea ice, is relevant for a multitude of branches: physics (heat/momentum exchange), chemistry (gas exchange), biology (photosynthesis), navigation (location of pack ice) and others. It has been observed from passive microwave (PMW) radiometers on satellites continuously since 1979, providing an almost 40-year time series. However, the resolution is limited to typically 25 km which is good enough for climate studies but too coarse to properly resolve the ice edge or to show leads. The highest resolution from PMW sensors today is 5 km of the AMSR2 89 GHz channels. Thermal infrared (TIR) and visible (VIS) measurements provide much higher resolutions between 1 km (TIR) and 30 m (VIS, regional daily coverage). The higher resolutions come at the cost of depending on cloud-free fields of view (TIR and VIS) and daylight (VIS). We present a merged product of ASI-AMSR2 SIC (PMW) and MODIS SIC (TIR) at a nominal resolution of 1 km. This product benefits from both the independence of PMW towards cloud coverage and the high resolution of TIR data. An independent validation data set has been produced from manually selected, cloud-free Landsat VIS data at 30 m resolution. This dataset is used to evaluate the performance of the merged SIC dataset. Our results show that the merged product resolves features which are smeared out by the PMW data while benefitting from the PMW data in cloudy cases and is thus indeed more than the sum of its parts.

  15. Development of a combustor liner composed of ceramic matrix composite (CMC)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nishio, K.; Igashira, K.I.; Take, K.

    The Research Institute of Advanced Materials Gas-Generator (AMG), which is a joint effort by the Japan Key Technology Center and 14 firms in Japan, has, since fiscal year 1992, been conducting technological studies on an innovative gas generator that will use 20% less fuel, weight 50% less, and emit 70% less NO{sub x} than the conventional gas generator through the use of advanced materials. Within this project, there is an R and D program for applying ceramic matrix composite (CMC) liners to the combustor, which is a major component of the gas generator. In the course of R and D,more » continuous SiC fiber-reinforced SiC composite (SiC{sup F}/SiC) was selected as the most suitable CMD for the combustor liner because of its thermal stability and formability. An evaluation of the applicability of the SiC{sup F}/SiC composite to the combustor liner on the basis of an evaluation of its mechanical properties and stress analysis of a SiC{sup F}/SiC combustor liner was carried out, and trial SiC{sup F}/SiC combustor liners, the largest of which was 500-mm in diameter, were fabricated by the filament winding and PIP (polymer impregnation and pyrolysis) method. Using a SiC{sup F}/SiC liner built to the actual dimensions, a noncooling combustion test was carried out and even when the gas temperature was raised to 1873K at outlet of the liner, no damage was observed after the test. Through their studies, the authors have confirmed the applicability of the selected SiC{sup F}/SiC composite as a combustor liner. In this paper, the authors describe the present state of the R and D of a CMC combustor liner.« less

  16. Investigation on mechanical behavior and material characteristics of various weight composition of SiCp reinforced aluminium metal matrix composite

    NASA Astrophysics Data System (ADS)

    Pichumani, Sivachidambaram; Srinivasan, Raghuraman; Ramamoorthi, Venkatraman

    2018-02-01

    Aluminium - silicon carbide (Al - SiC) metal matrix composite is produced with following wt % of SiC reinforcement (4%, 8% & 12%) using stir casting method. Mechanical testing such as micro hardness, tensile testing and bend testing were performed. Characterizations, namely micro structure, X-ray diffraction (XRD) analysis, inductive coupled plasma - optical emission spectroscopy (ICP-OES) and scanning electron microscopy (SEM) analysis, were carried out on Al - SiC composites. The presence of SiC on Al - SiC composite is confirmed through XRD technique and microstructure. The percentage of SiC was confirmed through ICP-OES technique. Increase in weight percentage of SiC tends to increase micro hardness, ultimate strength & yield strength but it reduces the bend strength and elongation (%) of the material. SEM factrography of tensile tested fractured samples of Al - 8% SiC & Al - 12% SiC showed fine dimples on fractured surface & coarse dimples fractured surface respectively. This showed significant fracture differences between Al - 8% SiC & Al - 12% SiC. From the above experiment, Al - 8% SiC had good micro hardness, ultimate strength & yield strength without significant loss in elongation (%) & bend strength.

  17. Growth and electrical characterization of two-dimensional layered MoS{sub 2}/SiC heterojunctions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, Edwin W.; Nath, Digbijoy N.; Lee, Choong Hee

    2014-11-17

    The growth and electrical characterization of the heterojunction formed between two-dimensional (2D) layered p-molybdenum disulfide (MoS{sub 2}) and nitrogen-doped 4H silicon carbide (SiC) are reported. The integration of 2D semiconductors with the conventional three-dimensional (3D) substrates could enable semiconductor heterostructures with unprecedented properties. In this work, direct growth of p-type MoS{sub 2} films on SiC was demonstrated using chemical vapor deposition, and the MoS{sub 2} films were found to be high quality based on x-ray diffraction and Raman spectra. The resulting heterojunction was found to display rectification and current-voltage characteristics consistent with a diode for which forward conduction in themore » low-bias region is dominated by multi-step recombination tunneling. Capacitance-voltage measurements were used to determine the built-in voltage for the p-MoS{sub 2}/n-SiC heterojunction diode, and we propose an energy band line up for the heterostructure based on these observations. The demonstration of heterogeneous material integration between MoS{sub 2} and SiC enables a promising new class of 2D/3D heterostructures.« less

  18. Electron microscopy and microanalysis of the fiber-matrix interface in monolithic silicone carbide-based ceramic composite material for use in a fusion reactor application.

    PubMed

    Toplisek, Tea; Drazic, Goran; Novak, Sasa; Kobe, Spomenka

    2008-01-01

    A composite material made from continuous monolithic silicone carbide (SiC) fibers and a SiC-based matrix (SiC(f)/SiC), was prepared using a novel technique, i.e. adapted dip coating and infiltration of SiC fibers with a water suspension containing SiC particles and a sintering additive. This kind of material could be used in the first-wall blanket of a future fusion reactor. Using magnetron sputtering, the SiC fibers were coated with various thin layers (TiC, CrN, CrC, WC, DLC-diamond-like carbon) of the interface material by physical vapor deposition (PVD). Using scanning and transmission electron microscopy and microanalysis, detailed microstructural studies of the fiber-matrix interface were performed. Both samples, with coated and uncoated fibers, were examined under a load. The microcracks introduced by the Vickers indenter continued their path through the fibers, and thus caused the failure of the composite material, in the case of the uncoated fibers or deviated from their primary direction at the fiber-matrix interface in the case of the coated fibers.

  19. SiC lightweight telescopes for advanced space applications. I - Mirror technology

    NASA Technical Reports Server (NTRS)

    Anapol, Michael I.; Hadfield, Peter

    1992-01-01

    A SiC based telescope is an extremely attractive emerging technology which offers the lightweight and stiffness features of beryllium, the optical performance of glass to diffraction limited visible resolution, superior optical/thermal stability to cryogenic temperatures, and the cost advantages of an aluminum telescope. SSG has developed various SiC mirrors with and without a silicon coating and tested these mirrors over temperature ranges from +50 C to -250 C. Our test results show less than 0.2 waves P-V in visible wavefront change and no hysteresis over this wide temperature range. Several SSG mirrors are representative of very lightweight SiC/Si mirrors including (1) a 9 cm diameter, high aspect ratio mirror weighing less than 30 grams and (2) a 23 cm diameter eggcrated mirror weighing less than 400 grams. SSG has also designed and analyzed a 0.6 meter SiC based, on axis, three mirror reimaging telescope in which the primary mirror weighs less than 6 kg and a 0.5 meter GOES-like scan mirror. SSG has also diamond turned several general aspheric SiC/Si mirrors with excellent cryo optical performance.

  20. Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

    DOE PAGES

    Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

    2016-02-01

    Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

  1. Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie; Casey, Megan

    2017-01-01

    Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

  2. Technical and cost advantages of silicon carbide telescopes for small-satellite imaging applications

    NASA Astrophysics Data System (ADS)

    Kasunic, Keith J.; Aikens, Dave; Szwabowski, Dean; Ragan, Chip; Tinker, Flemming

    2017-09-01

    Small satellites ("SmallSats") are a growing segment of the Earth imaging and remote sensing market. Designed to be relatively low cost and with performance tailored to specific end-use applications, they are driving changes in optical telescope assembly (OTA) requirements. OTAs implemented in silicon carbide (SiC) provide performance advantages for space applications but have been predominately limited to large programs. A new generation of lightweight and thermally-stable designs is becoming commercially available, expanding the application of SiC to small satellites. This paper reviews the cost and technical advantages of an OTA designed using SiC for small satellite platforms. Taking into account faceplate fabrication quilting and surface distortion after gravity release, an optimized open-back SiC design with a lightweighting of 70% for a 125-mm SmallSat-class primary mirror has an estimated mass area density of 2.8 kg/m2 and an aspect ratio of 40:1. In addition, the thermally-induced surface error of such optimized designs is estimated at λ/150 RMS per watt of absorbed power. Cost advantages of SiC include reductions in launch mass, thermal-management infrastructure, and manufacturing time based on allowable assembly tolerances.

  3. D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

    NASA Astrophysics Data System (ADS)

    Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

    2016-09-01

    This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of odd nitrogen (NOx), odd hydrogen (HOx) and O3 in the stratosphere and mesosphere.

  4. Method Developed for Improving the Thermomechanical Properties of Silicon Carbide Matrix Composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; DiCarlo, James A.

    2004-01-01

    Today, a major thrust for achieving engine components with improved thermal capability is the development of fiber-reinforced silicon-carbide (SiC) matrix composites. These materials are not only lighter and capable of higher use temperatures than state-of-the-art metallic alloys and oxide matrix composites (approx. 1100 C), but they can provide significantly better static and dynamic toughness than unreinforced silicon-based monolithic ceramics. However, for successful application in advanced engine systems, the SiC matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetime. Since the high-temperature structural life of ceramic materials is typically controlled by creep-induced flaw growth, a key composite property requirement is the ability to display high creep resistance under these conditions. Also, because of the possibility of severe thermal gradients in the components, the composites should provide maximum thermal conductivity to minimize the development of thermal stresses. State-of-the-art SiC matrix composites are typically fabricated via a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by high-performance fibers, (2) chemical vapor infiltration of a fiber coating material such as boron nitride (BN) into the preform, and (3) infiltration of a SiC matrix into the remaining porous areas in the preform. Generally, the highest performing composites have matrices fabricated by the CVI process, which produces a SiC matrix typically more thermally stable and denser than matrices formed by other approaches. As such, the CVI SiC matrix is able to provide better environmental protection to the coated fibers, plus provide the composite with better resistance to crack propagation. Also, the denser CVI SiC matrix should provide optimal creep resistance and thermal conductivity to the composite. However, for adequate preform infiltration, the CVI SiC matrix process typically has to be conducted at temperatures below 1100 C, which results in a SiC matrix that is fairly dense, but contains metastable atomic defects and is nonstoichiometric because of a small amount of excess silicon. Because these defects typically exist at the matrix grain boundaries, they can scatter thermal phonons and degrade matrix creep resistance by enhancing grain-boundary sliding. To eliminate these defects and improve the thermomechanical properties of ceramic composites with CVI SiC matrices, researchers at the NASA Glenn Research Center developed a high-temperature treatment process that can be used after the CVI SiC matrix is deposited into the fiber preform.

  5. Oxidation of Ultra-High Temperature Ceramics in Water Vapor

    NASA Technical Reports Server (NTRS)

    Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

    2003-01-01

    Ultra high temperature ceramics (UHTCs) including HfB2 + SiC (20% by volume), ZrB2 + SiC (20% by volume) and ZrB2 + SiC (14% by volume) + C (30% by volume) have historically been evaluated as reusable thermal protection systems for hypersonic vehicles. This study investigates UHTCs for use as potential combustion and aeropropulsion engine materials. These materials were oxidized in water vapor (90%) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 hours at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline comparison. Weight change measurements, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results will be compared with tests ran in static air at temperatures of 1327, 1627, and 1927 C. Oxidation comparisons will also be made to the study by Tripp. A small number of high pressure burner rig (HPBR) results at 1100 and 1300 C will also be discussed. Specific weight changes at all three temperatures along with the SIC results are shown. SiC weight change is negligible at such short duration times. HB2 + SiC (HS) performed the best out of all the tested UHTCS for all exposure temperatures. ZrB2 + Sic (ZS) results indicate a slightly lower oxidation rate than that of ZrBl + SiC + C (ZCS) at 1200 and 1400 C, but a clear distinction can not be made based on the limited number of tested samples. Scanning electron micrographs of the cross-sections of all the UHTCs were evaluated. A representative area for HS is presented at 1400 C for 26 hours which was the composition with the least amount of oxidation. A continuous SiO2 scale is present in the outer most edge of the surface. An image of ZCS is presented at 1400 C for 10 hours, which shows the most degradation of all the compositions studied. Here, the oxide surface is a mixture of ZrSiO4, ZrO2 and SO2.

  6. Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

    NASA Technical Reports Server (NTRS)

    Speer, Kevin M.

    2004-01-01

    Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).

  7. Pd/CeO2/SiC Chemical Sensors

    NASA Technical Reports Server (NTRS)

    Lu, Weijie; Collins, W. Eugene

    2005-01-01

    The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to thermal stability and, by contributing to transfer of electrons, would also contribute to sensitivity.

  8. Some fundamental and applicative properties of [polymer/nano-SiC] hybrid nanocomposites

    NASA Astrophysics Data System (ADS)

    Kassiba, A.; Bouclé, J.; Makowska-Janusik, M.; Errien, N.

    2007-08-01

    Hybrid nanocomposites which combine polymer as host matrix and nanocrystals as active elements are promising functional materials for electronics, optics or photonics. In these systems, the physical response is governed by the nanocrystal features (size, surface and defect states), the polymer properties and the polymer-nanocrystal interface. This work reviews some selective nanostructured architectures based on active elements such as silicon carbide (SiC) nanocrystals and polymer host matrices. Beyond an overview of some key properties of the nanocrystals, a main part will be devoted to the electro-optical (EO) properties of SiC based hybrid systems where SiC nanocrystals are embedded in polymer matrices of different chemical nature such as poly-(methylmethacrylate) (PMMA), poly-vinylcarbazole (PVK) or polycarbonate. Using this approach, the organic-inorganic interface effects are emphasised with regard to the dielectric or hole transporting behaviour of PMMA and PVK respectively. These effects are illustrated through different EO responses associated with hybrid composites based on PMMA or PVK.

  9. Processing of laser formed SiC powder

    NASA Technical Reports Server (NTRS)

    Haggerty, J. S.; Bowen, H. K.

    1987-01-01

    Processing research was undertaken to demonstrate that superior SiC characteristics could be achieved through the use of ideal constituent powders and careful post-synthesis processing steps. Initial research developed the means to produce approximately 1000 A uniform diameter, nonagglomerated, spherical, high purity SiC powders. Accomplishing this goal required major revision of the particle formation and growth model from one based on classical nucleation and growth to one based on collision and coalescence of Si particles followed by their carburization. Dispersions based on pure organic solvents as well as steric stabilization were investigated. Test parts were made by the colloidal pressing technique; both liquid filtration and consolidation (rearrangement) stages were modeled. Green densities corresponding to a random close packed structure were achieved. After drying, parts were densified at temperatures ranging from 1800 to 2100 C. This research program accomplished all of its major objectives. Superior microstructures and properties were attained by using powders having ideal characteristics and special post-synthesis processing procedures.

  10. Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

    PubMed Central

    Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

    2017-01-01

    Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al2O3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and VB. PMID:28218234

  11. Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications.

    PubMed

    Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

    2017-02-20

    Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and V B .

  12. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  13. Comparative analysis of emm type pattern of Group A Streptococcus throat and skin isolates from India and their association with closely related SIC, a streptococcal virulence factor

    PubMed Central

    Sagar, Vivek; Kumar, Rajesh; Ganguly, Nirmal K; Chakraborti, Anuradha

    2008-01-01

    Background Group A streptococcus (GAS) causes a wide variety of life threatening diseases in humans and the incidence of such infections is high in developing countries like India. Although distribution of emm types of GAS in India has been described, there is a lack of data describing either the comparative distribution of emm types in throat versus skin isolates, or the distribution of certain virulence factors amongst these isolates. Therefore in the present study we have monitored the emm type pattern of Group A streptococcus throat and skin isolates from India. Additionally, the association of these isolates with closely related sic (crs), a multifunctional compliment binding virulence factor, was also explored. Results Of the 94 (46 throat and 48 skin) isolates analyzed, 37 emm types were identified. The most frequently observed emm types were emm49 (8.5%) and emm112 (7.5%) followed by 6.5% each of emm1-2, emm75, emm77, and emm81. Out of 37 emm types, 27 have been previously reported and rest were isolated for the first time in the Indian Community. The predominant emm types of throat (emm49 and emm75) samples were different from those of skin (emm44, emm81 and emm112) samples. After screening all the 94 isolates, the crs gene was found in six emm1-2 (crs1-2) isolates, which was confirmed by DNA sequencing and expression analysis. Despite the polymorphic nature of crs, no intravariation was observed within crs1-2. However, insertions and deletions of highly variable sizes were noticed in comparison to CRS isolated from other emm types (emm1.0, emm57). CRS1-2 showed maximum homology with CRS57, but the genomic location of crs1-2 was found to be the same as that of sic1.0. Further, among crs positive isolates, speA was only present in skin samples thus suggesting possible role of speA in tissue tropism. Conclusion Despite the diversity in emm type pattern of throat and skin isolates, no significant association between emm type and source of isolation was observed. The finding that the crs gene is highly conserved even in two different variants of emm1-2 GAS (speA +ve and -ve) suggests a single allele of crs may be prevalent in the highly diverse throat and skin isolates of GAS in India. PMID:18796133

  14. Comparative analysis of emm type pattern of Group A Streptococcus throat and skin isolates from India and their association with closely related SIC, a streptococcal virulence factor.

    PubMed

    Sagar, Vivek; Kumar, Rajesh; Ganguly, Nirmal K; Chakraborti, Anuradha

    2008-09-16

    Group A streptococcus (GAS) causes a wide variety of life threatening diseases in humans and the incidence of such infections is high in developing countries like India. Although distribution of emm types of GAS in India has been described, there is a lack of data describing either the comparative distribution of emm types in throat versus skin isolates, or the distribution of certain virulence factors amongst these isolates. Therefore in the present study we have monitored the emm type pattern of Group A streptococcus throat and skin isolates from India. Additionally, the association of these isolates with closely related sic (crs), a multifunctional compliment binding virulence factor, was also explored. Of the 94 (46 throat and 48 skin) isolates analyzed, 37 emm types were identified. The most frequently observed emm types were emm49 (8.5%) and emm112 (7.5%) followed by 6.5% each of emm1-2, emm75, emm77, and emm81. Out of 37 emm types, 27 have been previously reported and rest were isolated for the first time in the Indian Community. The predominant emm types of throat (emm49 and emm75) samples were different from those of skin (emm44, emm81 and emm112) samples. After screening all the 94 isolates, the crs gene was found in six emm1-2 (crs1-2) isolates, which was confirmed by DNA sequencing and expression analysis. Despite the polymorphic nature of crs, no intravariation was observed within crs1-2. However, insertions and deletions of highly variable sizes were noticed in comparison to CRS isolated from other emm types (emm1.0, emm57). CRS1-2 showed maximum homology with CRS57, but the genomic location of crs1-2 was found to be the same as that of sic1.0. Further, among crs positive isolates, speA was only present in skin samples thus suggesting possible role of speA in tissue tropism. Despite the diversity in emm type pattern of throat and skin isolates, no significant association between emm type and source of isolation was observed. The finding that the crs gene is highly conserved even in two different variants of emm1-2 GAS (speA +ve and -ve) suggests a single allele of crs may be prevalent in the highly diverse throat and skin isolates of GAS in India.

  15. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

    This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiationmore » temperatures: 800oC, 500oC, and 400oC.« less

  16. A study on the reaction between chlorine trifluoride gas and glass-like carbon

    NASA Astrophysics Data System (ADS)

    Saito, Yoji; Nishizawa, Takashi; Hamaguchi, Maki

    2005-02-01

    The reaction between glass-like carbon (GC) and chlorine trifluoride (ClF 3) gas was investigated with weight measurements, surface analysis, and gas desorption measurements, where the ClF 3 gas is used for the in situ cleaning of tubes in silicon-related fabrication equipment. From Auger electron spectroscopy and X-ray photoelectron spectroscopy measurements, a carbon mono-fluoride, -(CF) n-, film near the surface of GC is considered to be grown onto the GC surface above 400 °C by the chemical reaction with ClF 3, and this thickness of the fluoride film depends on the temperature. The grown fluoride film desorbs by annealing in a vacuum up to 600 °C. Although GC is apparently etched by ClF 3 over 600 °C, the etch rate of GC is much lower than that of SiC and quartz.

  17. Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Putri, W. B. K.; Tran, D. H.; Kang, B., E-mail: bwkang@chungbuk.ac.kr

    2014-03-07

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} droppingmore » went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.« less

  18. Tribological Performance of Ni3Al Matrix Self-Lubricating Composites Containing Multilayer Graphene and Ti3SiC2 at Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Yan, Zhao; Shi, Xiaoliang; Huang, Yuchun; Deng, Xiaobin; Yang, Kang; Liu, Xiyao

    2017-09-01

    The application of Ni3Al-based alloy (NA) in the field of aerospace was limited by its poor tribological properties. For improving the tribological performance of NA, multilayer graphene (MLG) and Ti3SiC2 were added in Ni3Al matrix composites. Tribological behavior of Ni3Al matrix composites containing 1.5 wt.% MLG and 10 wt.% Ti3SiC2 (NMT) against Si3N4 ball at 12 N-0.2 m/s from 25 to 750 °C was investigated. The results showed that NMT exhibited the excellent tribological behavior [lower friction coefficients (0.26-0.57) and less wear resistance (3.1-6.5 × 10-6 mm3 N-1 m-1)] due to synergetic effect of MLG and Ti3SiC2 over a wide temperature range from 25 to 750 °C. At 25-350 °C, part of MLG enriched on worn surface could play a role in reducing friction and improving wear resistance. At 350-550 °C, although MLG gradually lost the lubricating properties, the partial decomposition of Ti3SiC2 could continually improve the tribological properties of NMT. At 550-750 °C, Ti3SiC2 on worn surface was oxidized to form lubricating film, while Ti3SiC2 in the subsurface played an important role in supporting the film, resulting in the excellent high-temperature tribological performance. The research had good guiding significance for the preparation of wide temperature range self-lubricating material and the study of synergetic effect of complex solid lubricants.

  19. Excited States of the divacancy in SiC

    NASA Astrophysics Data System (ADS)

    Bockstedte, Michel; Garratt, Thomas; Ivady, Viktor; Gali, Adam

    2014-03-01

    The divacancy in SiC - a technologically mature material that fulfills the necessary requirements for hosting defect based quantum computing - is a good candidate for implementing a solid state quantum bit. Its ground state is isovalent to the NV center in diamond as demonstrated by density functional theory (DFT). Furthermore, coherent manipulation of divacancy spins in SiC has been demonstrated. The similarities to NV might indicate that the same inter system crossing (ICS) from the high to the low spin state is responsible for its spin-dependent fluorescent signal. By DFT and a DFT-based multi-reference hamiltonian we analyze the excited state spectrum of the defects. In contrast to the current picture of the spin dynamics of the NV center, we predict that a static Jahn-Teller effect in the first excited triplet states governs an ICS both with the excited and ground state of the divacancy.

  20. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  1. Development of LWR Fuels with Enhanced Accident Tolerance

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lahoda, Edward J.; Boylan, Frank A.

    2015-10-30

    Significant progress was made on the technical, licensing, and business aspects of the Westinghouse Electric Company’s Enhanced Accident Tolerant Fuel (ATF) by the Westinghouse ATF team. The fuel pellet options included waterproofed U 15N and U 3Si 2 and the cladding options SiC composites and zirconium alloys with surface treatments. Technology was developed that resulted in U 3Si 2 pellets with densities of >94% being achieved at the Idaho National Laboratory (INL). The use of U 3Si 2 will represent a 15% increase in U235 loadings over those in UO₂ fuel pellets. This technology was then applied to manufacture pelletsmore » for 6 test rodlets which were inserted in the Advanced Test Reactor (ATR) in early 2015 in zirconium alloy cladding. The first of these rodlets are expected to be removed in about 2017. Key characteristics to be determined include verification of the centerline temperature calculations, thermal conductivity, fission gas release, swelling and degree of amorphization. Waterproofed UN pellets have achieved >94% density for a 32% U 3Si 2/68% UN composite pellet at Texas A&M University. This represents a U235 increase of about 31% over current UO 2 pellets. Pellets and powders of UO 2, UN, and U 3Si 2the were tested by Westinghouse and Los Alamos National Laboratory (LANL) using differential scanning calorimetry to determine what their steam and 20% oxygen corrosion temperatures were as compared to UO 2. Cold spray application of either the amorphous steel or the Ti 2AlC was successful in forming an adherent ~20 micron coating that remained after testing at 420°C in a steam autoclave. Tests at 1200°C in 100% steam on coatings for Zr alloy have not been successful, possibly due to the low density of the coatings which allowed steam transport to the base zirconium metal. Significant modeling and testing has been carried out for the SiC/SiC composite/SiC monolith structures. A structure with the monolith on the outside and composite on the inside was developed which is the current baseline structure and a SiC to SiC tube closure approach. Permeability tests and mechanical tests were developed to verify the operation of the SiC cladding. Steam autoclave (420°C), high temperature (1200°C) flowing steam tests and quench tests were carried out with minimal corrosion, mechanical or hermeticity degradation effect on the SiC cladding or end plug closure. However, in-reactor loop tests carried out in the MIT reactor indicated an unacceptable degree of corrosion, likely due to the corrosive effect of radiolysis products which attacked the SiC.« less

  2. Vertically cross-linked and porous CoNi2S4 nanosheets-decorated SiC nanowires with exceptional capacitive performance as a free-standing electrode for asymmetric supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan; Li, Qingdang

    2016-11-01

    In this paper, a simple, low-cost and mild hydrothermal technology of growing vertically cross-linked ternary nickel cobalt sulfides nanosheets (CoNi2S4 NSs) with porous characteristics on SiC nanowires (SiC NWs) supporters with outstanding resistances to oxidation and corrosion, good conductivity and large specific surface area deposited directly on carbon cloth (CC) is successfully developed, forming a new family of free-standing advanced hybrid electrode for asymmetric supercapacitors (ASCs). Such integrated electrode (SiC NWs@CoNi2S4 NSs) manifests intriguing electrochemical characteristics such as high specific capacity (231.1 mA h g-1 at 2 A g-1) and rate capability due to the synergistic effect of SiC NWs and CoNi2S4 NSs with unique morphology. Additionally, an asymmetric supercapacitor is also assembled via using this special hybrid architectures as positive electrode and activated carbon (AC) on Ni foam (NF) as negative electrode, and it can yield a high energy density of 57.8 W h kg-1 with a power density of 1.6 kW kg-1 and long cycling lifespan. This study constitutes an emerging attractive strategy to reasonably design and fabricate novel SiC NWs-based nanostructured electrodes with enhanced capacity, which holds great potential to be the candidate of electrode materials for environmentally benign as well as high-performance energy storage devices.

  3. Performance of AGR-1 high-temperature reactor fuel during post-irradiation heating tests

    DOE PAGES

    Morris, Robert N.; Baldwin, Charles A.; Demkowicz, Paul A.; ...

    2016-05-18

    The fission product retention of irradiated low-enriched uranium oxide/uranium carbide tri-structural isotropic (TRISO) fuel compacts from the Advanced Gas-Cooled Reactor 1 (AGR-1) experiment has been evaluated at temperatures of 1600–1800 °C during post-irradiation safety tests. Fourteen compacts (a total of ~58,000 particles) with a burnup ranging from 13.4% to 19.1% fissions per initial metal atom (FIMA) have been tested using dedicated furnace systems at Idaho National Laboratory and Oak Ridge National Laboratory. The release of fission products 110mAg, 134Cs, 137Cs, 154Eu, 155Eu, 90Sr, and 85Kr was monitored while heating the fuel specimens in flowing helium. The behavior of silver, europium,more » and strontium appears to be dominated by inventory that was originally released through intact SiC coating layers during irradiation, but was retained in the compact at the end of irradiation and subsequently released during the safety tests. However, at a test temperature of 1800 °C, the data suggest that release of these elements through intact coatings may become significant after ~100 h. Cesium was very well retained by intact SiC layers, with a fractional release <5 × 10–6 after 300 h at 1600 °C or 100 h at 1800 °C. However, it was rapidly released from individual particles if the SiC layer failed, and therefore the overall cesium release fraction was dominated by the SiC defect and failure fractions in the fuel compacts. No complete TRISO coating layer failures were observed after 300 h at 1600 or 1700 °C, and 85Kr release was very low during the tests (particles with failed SiC, but intact outer pyrocarbon, retained most of their krypton). Krypton release from TRISO failures was only observed after ~210 h at 1800 °C in one compact. As a result, post-safety-test examination of fuel compacts and particles has focused on identifying specific particles from each compact with notable fission product release and detailed analysis of the coating layers to understand particle behavior.« less

  4. Performance of AGR-1 high-temperature reactor fuel during post-irradiation heating tests

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Morris, Robert N.; Baldwin, Charles A.; Demkowicz, Paul A.

    The fission product retention of irradiated low-enriched uranium oxide/uranium carbide tri-structural isotropic (TRISO) fuel compacts from the Advanced Gas-Cooled Reactor 1 (AGR-1) experiment has been evaluated at temperatures of 1600–1800 °C during post-irradiation safety tests. Fourteen compacts (a total of ~58,000 particles) with a burnup ranging from 13.4% to 19.1% fissions per initial metal atom (FIMA) have been tested using dedicated furnace systems at Idaho National Laboratory and Oak Ridge National Laboratory. The release of fission products 110mAg, 134Cs, 137Cs, 154Eu, 155Eu, 90Sr, and 85Kr was monitored while heating the fuel specimens in flowing helium. The behavior of silver, europium,more » and strontium appears to be dominated by inventory that was originally released through intact SiC coating layers during irradiation, but was retained in the compact at the end of irradiation and subsequently released during the safety tests. However, at a test temperature of 1800 °C, the data suggest that release of these elements through intact coatings may become significant after ~100 h. Cesium was very well retained by intact SiC layers, with a fractional release <5 × 10–6 after 300 h at 1600 °C or 100 h at 1800 °C. However, it was rapidly released from individual particles if the SiC layer failed, and therefore the overall cesium release fraction was dominated by the SiC defect and failure fractions in the fuel compacts. No complete TRISO coating layer failures were observed after 300 h at 1600 or 1700 °C, and 85Kr release was very low during the tests (particles with failed SiC, but intact outer pyrocarbon, retained most of their krypton). Krypton release from TRISO failures was only observed after ~210 h at 1800 °C in one compact. As a result, post-safety-test examination of fuel compacts and particles has focused on identifying specific particles from each compact with notable fission product release and detailed analysis of the coating layers to understand particle behavior.« less

  5. Unraveling Crystalline Structure of High-Pressure Phase of Silicon Carbonate

    NASA Astrophysics Data System (ADS)

    Zhou, Rulong; Qu, Bingyan; Dai, Jun; Zeng, Xiao Cheng

    2014-03-01

    Although CO2 and SiO2 both belong to group-IV oxides, they exhibit remarkably different bonding characteristics and phase behavior at ambient conditions. At room temperature, CO2 is a gas, whereas SiO2 is a covalent solid with rich polymorphs. A recent successful synthesis of the silicon-carbonate solid from the reaction between CO2 and SiO2 under high pressure [M. Santoro et al., Proc. Natl. Acad. Sci. U.S.A. 108, 7689 (2011)] has resolved a long-standing puzzle regarding whether a SixC1-xO2 compound between CO2 and SiO2 exists in nature. Nevertheless, the detailed atomic structure of the SixC1-xO2 crystal is still unknown. Here, we report an extensive search for the high-pressure crystalline structures of the SixC1-xO2 compound with various stoichiometric ratios (SiO2:CO2) using an evolutionary algorithm. Based on the low-enthalpy structures obtained for each given stoichiometric ratio, several generic structural features and bonding characteristics of Si and C in the high-pressure phases are identified. The computed formation enthalpies show that the SiC2O6 compound with a multislab three-dimensional (3D) structure is energetically the most favorable at 20 GPa. Hence, a stable crystalline structure of the elusive SixC1-xO2 compound under high pressure is predicted and awaiting future experimental confirmation. The SiC2O6 crystal is an insulator with elastic constants comparable to typical hard solids, and it possesses nearly isotropic tensile strength as well as extremely low shear strength in the 2D plane, suggesting that the multislab 3D crystal is a promising solid lubricant. These valuable mechanical and electronic properties endow the SiC2O6 crystal for potential applications in tribology and nanoelectronic devices, or as a stable solid-state form for CO2 sequestration.

  6. Nanocrystalline SiC and Ti 3SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti 3SiC 2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3SiC 2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3SiC 2,more » SiC, and a dual-phase nanocomposite of Ti 3SiC 2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.« less

  7. Benzene Adsorption on C24, Si@C24, Si-Doped C24, and C20 Fullerenes

    NASA Astrophysics Data System (ADS)

    Baei, Mohammad T.

    2017-12-01

    The absorption feasibility of benzene molecule in the C24, Si@C24, Si-doped C24, and C20 fullerenes has been studied based on calculated electronic properties of these fullerenes using Density functional Theory (DFT). It is found that energy of benzene adsorption on C24, Si@C24, and Si-doped C24 fullerenes were in range of -2.93 and -51.19 kJ/mol with little changes in their electronic structure. The results demonstrated that the C24, Si@C24, and Si-doped C24 fullerenes cannot be employed as a chemical adsorbent or sensor for benzene. Silicon doping cannot significantly modify both the electronic properties and benzene adsorption energy of C24 fullerene. On the other hand, C20 fullerene exhibits a high sensitivity, so that the energy gap of the fullerene is changed almost 89.19% after the adsorption process. We concluded that the C20 fullerene can be employed as a reliable material for benzene detection.

  8. Hot corrosion of ceramic engine materials

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.; Jacobson, Nathan S.; Smialek, James L.

    1988-01-01

    A number of commercially available SiC and Si3N4 materials were exposed to 1000 C in a high velocity, pressurized burner rig as a simulation of a turbine engine environment. Sodium impurities added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si4N4 and formation of substantial Na2O-x(SiO2) corrosion product. Room temperature strength of the materials decreased. This was a result of the formation of corrosion pits in SiC, and grain boundary dissolution and pitting in Si3N4. Corrosion regimes for such Si-based ceramics have been predicted using thermodynamics and verified in rig tests of SiO2 coupons. Protective mullite coatings are being investigated as a solution to the corrosion problem for SiC and Si3N4. Limited corrosion occurred to cordierite (Mg2Al4Si5O18) but some cracking of the substrate occurred.

  9. Feasibility study on development of metal matrix composite by microwave stir casting

    NASA Astrophysics Data System (ADS)

    Lingappa, S. M.; Srinath, M. S.; Amarendra, H. J.

    2018-04-01

    Need for better service oriented materials has boosted the demand for metal matrix composite materials, which can be developed to have necessary properties. One of the most widely utilized metal matrix composite is Al-SiC, which is having a matrix made of aluminium metal and SiC as reinforcement. Lightweight and conductivity of aluminium, when combined with hardness and wear resistance of SiC provides an excellent platform for various applications in the field of electronics, automotives, and aerospace and so on. However, uniform distribution of reinforcement particles is an issue and has to be addressed. The present study is an attempt made to develop Al-SiC metal matrix composite by melting base metal using microwave hybrid heating technique, followed by addition of reinforcement and stirring the mixture for obtaining homogenous mixture. X-Ray Diffraction analysis shows the presence of aluminium and SiC in the cast material. Further, microstructural study shows the distribution of SiC particles in the grain boundaries.

  10. SiC layer microstructure in AGR-1 and AGR-2 TRISO fuel particles and the influence of its variation on the effective diffusion of key fission products

    DOE PAGES

    Gerczak, Tyler J.; Hunn, John D.; Lowden, Richard A.; ...

    2016-08-15

    Tristructural isotropic (TRISO) coated particle fuel is a promising fuel form for advanced reactor concepts such as high temperature gas-cooled reactors (HTGR) and is being developed domestically under the US Department of Energy’s Nuclear Reactor Technologies Initiative in support of Advanced Reactor Technologies. The fuel development and qualification plan includes a series of fuel irradiations to demonstrate fuel performance from the laboratory to commercial scale. The first irradiation campaign, AGR-1, included four separate TRISO fuel variants composed of multiple, laboratory-scale coater batches. The second irradiation campaign, AGR-2, included TRISO fuel particles fabricated by BWX Technologies with a larger coater representativemore » of an industrial-scale system. The SiC layers of as-fabricated particles from the AGR-1 and AGR-2 irradiation campaigns have been investigated by electron backscatter diffraction (EBSD) to provide key information about the microstructural features relevant to fuel performance. The results of a comprehensive study of multiple particles from all constituent batches are reported. The observations indicate that there were microstructural differences between variants and among constituent batches in a single variant. Finally, insights on the influence of microstructure on the effective diffusivity of key fission products in the SiC layer are also discussed.« less

  11. Are there Bucky Balls in Circumstellar Space?

    NASA Astrophysics Data System (ADS)

    Little-Marenin, I. R.; Clayton, G. C.

    1993-01-01

    Recently the gas-phase (and solid phase) infrared emission spectrum of C60 -buckminsterfullerene has been obtained. Bands attributable to C60 have been identified at 8.6 microns (1169 cm(-1) ), 17.5 microns (570 cm(-1) ), 19.0 microns (527 cm(-1) ) and 7.1 microns (1410 cm(-1) ) (Frum et al. 1991, Chem. Phy. Lett., 176, 504). The low resolution spectrometer (LRS) on IRAS obtained spectra in the 8-22 microns region of brighter sources including about 500 carbon stars. Besides the 11.2 microns SiC dust grain feature, a significant number of the carbon stars show an emission feature between 8- 9 microns typically peaking around 8.6 microns even after correcting for a calibration problem associated with the short wavelength end of the spectra (Volk and Cohen 1989, A.J., 98, 1918). The strength of this emission feature relative to the SiC feature varies significantly from being absent to being much stronger than the SiC feature. Attempts to attribute this feature to PAHs have been unsucessful. We suggest that the 8.6 microns feature may be due to buckminsterfullerene-C60. Attempts to identify the diffuse interstellar bands with C60 have been unsuccessful. We are conducting a search for the 17.5 and 19 microns features associated with buckminsterfullerenes. The strength of the 8.6 microns feature will be correlated with other known abundance parameters.

  12. Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; Hebsur, Mohan G.

    2000-01-01

    Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

  13. SiC Seeded Crystal Growth

    NASA Astrophysics Data System (ADS)

    Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

    1997-07-01

    The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

  14. Evaluation of thermal conductivity and flexural strength properties of poly(methyl methacrylate) denture base material reinforced with different fillers.

    PubMed

    Kul, Esra; Aladağ, Lütfü İhsan; Yesildal, Ruhi

    2016-11-01

    Poly(methyl methacrylate) (PMMA) is widely used in prosthodontics as a denture base material. However, it has several disadvantages, including low strength and low thermal conductivity. The purpose of this in vitro study was to evaluate thermal conductivity and flexural strength after adding powdered Ag, TiO 2 , ZrO 2 , Al 2 O 3 , SiC, SiC-nano, Si 3 N 4 , and HA-nano in ratios of 10 wt% to PMMA. A total of 144 specimens were fabricated and divided into 18 groups. Specimens were left in water for 30 days. Thermal conductivity values were measured using a heat flowmeter, flexural strength was measured with a 3-point bend test, and specimens were investigated with environmental scanning electron microscopy. One-way ANOVA was used to compare means followed by using Duncan multiple range test (α=.05). The thermal conductivity value of PMMA increased significantly after the addition of Si 3 N 4 , SiC, Al 2 O 3 , SiC-nano, TiO 2 , ZrO 2 , HA-nano, and Ag. Progressive increases in thermal conductivity were observed in Si 3 N 4 , SiC, and Al 2 O 3 fillers. Flexural strength values of the control group were not significantly different from those of the SiC, Al 2 O 3 , or Ag group (P>.05). In the other groups, flexural strength values decreased significantly (P<.05). On the basis of electron microscopy, we observed that Si 3 N 4 , SiC, and Al 2 O 3 powders had higher thermal conductivity values that are dissipated more homogeneously in PMMA. Although the addition of 10 wt% SiC, Al 2 O 3, and Ag powder to PMMA significantly increased thermal conductivity, the flexural strength values of PMMA were not significantly changed. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  15. Streptococcal inhibitor of complement (SIC) inhibits the membrane attack complex by preventing uptake of C567 onto cell membranes

    PubMed Central

    Fernie-King, Barbara A; Seilly, David J; Willers, Christine; Würzner, Reinhard; Davies, Alexandra; Lachmann, Peter J

    2001-01-01

    Streptococcal inhibitor of complement (SIC) was first described in 1996 as a putative inhibitor of the membrane attack complex of complement (MAC). SIC is a 31 000 MW protein secreted in large quantities by the virulent Streptococcus pyogenes strains M1 and M57, and is encoded by a gene which is extremely variable. In order to study further the interactions of SIC with the MAC, we have made a recombinant form of SIC (rSIC) in Escherichia coli and purified native M1 SIC which was used to raise a polyclonal antibody. SIC prevented reactive lysis of guinea pig erythrocytes by the MAC at a stage prior to C5b67 complexes binding to cell membranes, presumably by blocking the transiently expressed membrane insertion site on C7. The ability of SIC and clusterin (another putative fluid phase complement inhibitor) to inhibit complement lysis was compared, and found to be equally efficient. In parallel, by enzyme-linked immunosorbent assay both SIC and rSIC bound strongly to C5b67 and C5b678 complexes and to a lesser extent C5b-9, but only weakly to individual complement components. The implications of these data for virulence of SIC-positive streptococci are discussed, in light of the fact that Gram-positive organisms are already protected against complement lysis by the presence of their peptidoglycan cell walls. We speculate that MAC inhibition may not be the sole function of SIC. PMID:11454069

  16. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Szlufarska, Izabela; Voyles, Paul; Sridharan, Kumar

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is criticalmore » to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and modeling effort to discover the previously invisible defects in irradiated SiC and to determine the contributions of these defects to radiation swelling. Knowledge of the most stable defect structures and the rate controlling processes during defect evolution is essential for development of predictive models for swelling and creep as a function of temperature and radiation dose. This research has been enabled by state-of-the-art imaging techniques, such as the aberration corrected scanning transmission electron microscopy (STEM) (FEI TITAN) closely coupled with multi-scale models of stable defect clusters and their evolution.« less

  17. FIRST-PRINCIPLES CALCULATIONS OF INTRINSIC DEFECTS AND Mg TRANSMUTANTS IN 3C-SiC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hu, Shenyang Y.; Setyawan, Wahyu; Van Ginhoven, Renee M.

    2013-09-25

    Silicon carbide (SiC) possesses many desirable attributes for applications in high-temperature and neutron radiation environments. These attributes include excellent dimensional and thermodynamic stability, low activation, high strength, and high thermal conductivity. Therefore, SiC based materials draw broad attention as structural materials for the first wall (FW) and blanket in fusion power plants. Under the severe high-energy neutron environment of D-T fusion systems, SiC suffers significant transmutation resulting in both gaseous and metallic transmutants. Recent calculations by Sawan, et al. [2] predict that at a fast neutron dose of ~100 dpa, there will be about 0.5 at% Mg generated in SiCmore » through nuclear transmutation. Other transmutation products, including 0.15 at% Al, 0.2 at% Be and 2.2 at% He, also emerge. Formation and migration energies of point defects in 3C-SiC have been widely investigated using density functional theory (DFT). However, the properties of defects associated with transmutants are currently not well understood. Fundamental understanding of where the transmutation products go and how they affect microstructure evolution of SiC composites will help to predict property evolution and performance of SiC-based materials in fusion reactors.« less

  18. Phenomenological study of the behavior of some silica formers in a high velocity jet fuel burner

    NASA Technical Reports Server (NTRS)

    Cawley, J. D.; Handschuh, R. F.

    1985-01-01

    Samples of four silica formers: single crystal SiC, sintered alpha-SiC, reaction sintered Si3N4 and polycrystalline MoSi2, were subjected to a Mach 1 jet fuel burner for 1 hr, at a sample temperature of 1375 deg C (2500 deg F). Two phenomena were identified which may be deleterious to a gas turbine application of these materials. The glass layer formed on the MoSi2 deformed appreciably under the aerodynamic load. A scale developed on the samples of the other materials which consisted of particular matter from the gas stream entrapped in a SiO2 matrix.

  19. Evaluation of ceramics for stator application: Gas turbine engine report

    NASA Technical Reports Server (NTRS)

    Trela, W.; Havstad, P. H.

    1978-01-01

    Current ceramic materials, component fabrication processes, and reliability prediction capability for ceramic stators in an automotive gas turbine engine environment are assessed. Simulated engine duty cycle testing of stators conducted at temperatures up to 1093 C is discussed. Materials evaluated are SiC and Si3N4 fabricated from two near-net-shape processes: slip casting and injection molding. Stators for durability cycle evaluation and test specimens for material property characterization, and reliability prediction model prepared to predict stator performance in the simulated engine environment are considered. The status and description of the work performed for the reliability prediction modeling, stator fabrication, material property characterization, and ceramic stator evaluation efforts are reported.

  20. Scalable synthesis of interconnected porous silicon/carbon composites by the Rochow reaction as high-performance anodes of lithium ion batteries.

    PubMed

    Zhang, Zailei; Wang, Yanhong; Ren, Wenfeng; Tan, Qiangqiang; Chen, Yunfa; Li, Hong; Zhong, Ziyi; Su, Fabing

    2014-05-12

    Despite the promising application of porous Si-based anodes in future Li ion batteries, the large-scale synthesis of these materials is still a great challenge. A scalable synthesis of porous Si materials is presented by the Rochow reaction, which is commonly used to produce organosilane monomers for synthesizing organosilane products in chemical industry. Commercial Si microparticles reacted with gas CH3 Cl over various Cu-based catalyst particles to substantially create macropores within the unreacted Si accompanying with carbon deposition to generate porous Si/C composites. Taking advantage of the interconnected porous structure and conductive carbon-coated layer after simple post treatment, these composites as anodes exhibit high reversible capacity and long cycle life. It is expected that by integrating the organosilane synthesis process and controlling reaction conditions, the manufacture of porous Si-based anodes on an industrial scale is highly possible. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. In Situ Measurements of Spectral Emissivity of Materials for Very High Temperature Reactors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    G. Cao; S. J. Weber; S. O. Martin

    2011-08-01

    An experimental facility for in situ measurements of high-temperature spectral emissivity of materials in environments of interest to the gas-cooled very high temperature reactor (VHTR) has been developed. The facility is capable of measuring emissivities of seven materials in a single experiment, thereby enhancing the accuracy in measurements due to even minor systemic variations in temperatures and environments. The system consists of a cylindrical silicon carbide (SiC) block with seven sample cavities and a deep blackbody cavity, a detailed optical system, and a Fourier transform infrared spectrometer. The reliability of the facility has been confirmed by comparing measured spectral emissivitiesmore » of SiC, boron nitride, and alumina (Al2O3) at 600 C against those reported in literature. The spectral emissivities of two candidate alloys for VHTR, INCONEL{reg_sign} alloy 617 (INCONEL is a registered trademark of the Special Metals Corporation group of companies) and SA508 steel, in air environment at 700 C were measured.« less

  2. Orthorhombic Titanium Matrix Composite Subjected to Simulated Engine Mission Cycles

    NASA Technical Reports Server (NTRS)

    Gabb, Timothy P.

    1997-01-01

    Titanium matrix composites (TMC's) are commonly made up of a titanium alloy matrix reinforced by silicon carbide fibers that are oriented parallel to the loading axis. These composites can provide high strength at lower densities than monolithic titanium alloys and superalloys in selected gas turbine engine applications. The use of TMC rings with unidirectional SiC fibers as reinforcing rings within compressor rotors could significantly reduce the weight of these components. In service, these TMC reinforcing rings would be subjected to complex service mission loading cycles, including fatigue and dwell excursions. Orthorhombic titanium aluminide alloys are of particular interest for such TMC applications because their tensile and creep strengths are high in comparison to those of other titanium alloys. The objective of this investigation was to assess, in simulated mission tests at the NASA Lewis Research Center, the durability of a SiC (SCS-6)/Ti-22Al-23Nb (at.%) TMC for compressor ring applications, in cooperation with the Allison Engine Company.

  3. Determining the minimum required uranium carbide content for HTGR UCO fuel kernels

    DOE PAGES

    McMurray, Jacob W.; Lindemer, Terrence B.; Brown, Nicholas R.; ...

    2017-03-10

    There are three important failure mechanisms that must be controlled in high-temperature gas-cooled reactor (HTGR) fuel for certain higher burnup applications are SiC layer rupture, SiC corrosion by CO, and coating compromise from kernel migration. All are related to high CO pressures stemming from free O generated when uranium present as UO 2 fissions and the O is not subsequently bound by other elements. Furthermore, in the HTGR UCO kernel design, CO buildup from excess O is controlled by the inclusion of additional uranium in the form of a carbide, UC x. An approach for determining the minimum UC xmore » content to ensure negligible CO formation was developed and demonstrated using CALPHAD models and the Serpent 2 reactor physics and depletion analysis tool. Our results are intended to be more accurate than previous estimates by including more nuclear and chemical factors, in particular the effect of transmutation products on the oxygen distribution as the fuel kernel composition evolves with burnup.« less

  4. DOE Office of Scientific and Technical Information (OSTI.GOV)

    McMurray, Jacob W.; Lindemer, Terrence B.; Brown, Nicholas R.

    There are three important failure mechanisms that must be controlled in high-temperature gas-cooled reactor (HTGR) fuel for certain higher burnup applications are SiC layer rupture, SiC corrosion by CO, and coating compromise from kernel migration. All are related to high CO pressures stemming from free O generated when uranium present as UO 2 fissions and the O is not subsequently bound by other elements. Furthermore, in the HTGR UCO kernel design, CO buildup from excess O is controlled by the inclusion of additional uranium in the form of a carbide, UC x. An approach for determining the minimum UC xmore » content to ensure negligible CO formation was developed and demonstrated using CALPHAD models and the Serpent 2 reactor physics and depletion analysis tool. Our results are intended to be more accurate than previous estimates by including more nuclear and chemical factors, in particular the effect of transmutation products on the oxygen distribution as the fuel kernel composition evolves with burnup.« less

  5. The 13C-Pocket Structure In AGB Models: Constraints From Zirconium Isotope Abundances In Single Mainstream SiC Grains

    DOE PAGES

    Liu, Nan; Gallino, Roberto; Bisterzo, Sara; ...

    2014-06-04

    In this paper, we present postprocess asymptotic giant branch (AGB) nucleosynthesis models with different 13C-pocket internal structures to better explain zirconium isotope measurements in mainstream presolar SiC grains by Nicolussi et al. and Barzyk et al. We show that higher-than-solar 92Zr/ 94Zr ratios can be predicted by adopting a 13C-pocket with a flat 13C profile, instead of the previous decreasing-with-depth 13C profile. Finally, the improved agreement between grain data for zirconium isotopes and AGB models provides additional support for a recent proposal of a flat 13C profile based on barium isotopes in mainstream SiC grains by Liu et al.

  6. In-pile Hydrothermal Corrosion Evaluation of Coated SiC Ceramics and Composites

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Carpenter, David; Ang, Caen; Katoh, Yutai

    2017-09-01

    Hydrothermal corrosion accelerated by water radiolysis during normal operation is among the most critical technical feasibility issues remaining for silicon carbide (SiC) composite-based cladding that could provide enhanced accident-tolerance fuel technology for light water reactors. An integrated in-pile test was developed and performed to determine the synergistic effects of neutron irradiation, radiolysis, and pressurized water flow, all of which are relevant to a typical pressurized water reactor (PWR). The test specimens were chosen to cover a range of SiC materials and a variety of potential options for environmental barrier coatings. This document provides a summary of the irradiation vehicle design,more » operations of the experiment, and the specimen loading into the irradiation vehicle.« less

  7. MS/MS Automated Selected Ion Chromatograms

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Monroe, Matthew

    2005-12-12

    This program can be used to read a LC-MS/MS data file from either a Finnigan ion trap mass spectrometer (.Raw file) or an Agilent Ion Trap mass spectrometer (.MGF and .CDF files) and create a selected ion chromatogram (SIC) for each of the parent ion masses chosen for fragmentation. The largest peak in each SIC is also identified, with reported statistics including peak elution time, height, area, and signal to noise ratio. It creates several output files, including a base peak intensity (BPI) chromatogram for the survey scan, a BPI for the fragmentation scans, an XML file containing the SICmore » data for each parent ion, and a "flat file" (ready for import into a database) containing summaries of the SIC data statistics.« less

  8. Vibrational response and mechanical properties characterization of aluminium alloy 6061/Sic composite

    NASA Astrophysics Data System (ADS)

    Kumbhar, A. P.; Vyavahare, R. T.; Kulkarni, S. G.

    2018-05-01

    Aluminium alloy based metal matrix composites (AAMMC) are mainly used in sliding wear application, automobile, Aircraft and aerospace components, Marine fittings, Transport and other industry are becoming highly advantageous due to their excellent wear resistance, lighter weight, higher strength and durability. In this paper the effect of reinforcement percentage on vibration response and mechanical properties of metal matrix composite has been investigated. Composite material was prepared by varying Sic (0, 3, 6, and 9 wt. %) by stir casting method. Natural frequency, tensile strength, rockwell hardness and compressive strength were analyzed. The result shows that, addition of sic in aluminium matrix increases natural frequency, hardness, tensile strength, compressive strength and 9 wt. % showed maximum natural frequency, hardness, tensile strength, compressive strength.

  9. Amino Acids in the Capsid Protein of Tomato Yellow Leaf Curl Virus That Are Crucial for Systemic Infection, Particle Formation, and Insect Transmission

    PubMed Central

    Noris, E.; Vaira, A. M.; Caciagli, P.; Masenga, V.; Gronenborn, B.; Accotto, G. P.

    1998-01-01

    A functional capsid protein (CP) is essential for host plant infection and insect transmission in monopartite geminiviruses. We studied two defective genomic DNAs of tomato yellow leaf curl virus (TYLCV), Sic and SicRcv. Sic, cloned from a field-infected tomato, was not infectious, whereas SicRcv, which spontaneously originated from Sic, was infectious but not whitefly transmissible. A single amino acid change in the CP was found to be responsible for restoring infectivity. When the amino acid sequences of the CPs of Sic and SicRcv were compared with that of a closely related wild-type virus (TYLCV-Sar), differences were found in the following positions: 129 (P in Sic and SicRcv, Q in Sar), 134 (Q in Sic and Sar, H in SicRcv) and 152 (E in Sic and SicRcv, D in Sar). We constructed TYLCV-Sar variants containing the eight possible amino acid combinations in those three positions and tested them for infectivity and transmissibility. QQD, QQE, QHD, and QHE had a wild-type phenotype, whereas PHD and PHE were infectious but nontransmissible. PQD and PQE mutants were not infectious; however, they replicated and accumulated CP, but not virions, in Nicotiana benthamiana leaf discs. The Q129P replacement is a nonconservative change, which may drastically alter the secondary structure of the CP and affect its ability to form the capsid. The additional Q134H change, however, appeared to compensate for the structural modification. Sequence comparisons among whitefly-transmitted geminiviruses in terms of the CP region studied showed that combinations other than QQD are present in several cases, but never with a P129. PMID:9811744

  10. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2010-01-01

    Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

  11. Spin-injection into epitaxial graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Konishi, Keita; Cui, Zhixin; Hiraki, Takahiro; Yoh, Kanji

    2013-09-01

    We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 Å) and a ferromagnetic Co (600 Å) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement.

  12. Processing of laser formed SiC powder

    NASA Technical Reports Server (NTRS)

    Haggerty, J. S.; Bowen, H. K.

    1985-01-01

    Superior SiC characteristics can be achieved through the use of ideal constituent powders and careful post-synthesis processing steps. High purity SiC powders of approx. 1000 A uniform diameter, nonagglomerated and spherical were produced. This required major revision of the particle formation and growth model from one based on classical nucleation and growth to one based on collision and coalescence of Si particles followed by their carburization. Dispersions based on pure organic solvents as well as steric stabilization were investigated. Although stable dispersions were formed by both, subsequent part fabrication emphasized the pure solvents since fewer problems with drying and residuals of the high purity particles were anticipated. Test parts were made by the colloidal pressing technique; both liquid filtration and consolidation (rearrangement) stages were modeled. Green densities corresponding to a random close packed structure (approx. 63%) were achieved; this highly perfect structure has a high, uniform coordination number (greater than 11) approaching the quality of an ordered structure without introducing domain boundary effects. After drying, parts were densified at temperatures ranging from 1800 to 2100 C. Optimum densification temperatures will probably be in the 1900 to 2000 C range based on these preliminary results which showed that 2050 C samples had experienced substantial grain growth. Although overfired, the 2050 C samples exhibited excellent mechanical properties. Biaxial tensile strengths up to 714 MPa and Vickers hardness values of 2430 kg/sq mm 2 were both more typical of hot pressed than sintered SiC. Both result from the absence of large defects and the confinement of residual porosity (less than 2.5%) to small diameter, uniformly distributed pores.

  13. Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

    NASA Technical Reports Server (NTRS)

    Kuczmarski, Maria A.; Neudeck, Philip G.

    2000-01-01

    Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

  14. Statistical Prediction of Sea Ice Concentration over Arctic

    NASA Astrophysics Data System (ADS)

    Kim, Jongho; Jeong, Jee-Hoon; Kim, Baek-Min

    2017-04-01

    In this study, a statistical method that predict sea ice concentration (SIC) over the Arctic is developed. We first calculate the Season-reliant Empirical Orthogonal Functions (S-EOFs) of monthly Arctic SIC from Nimbus-7 SMMR and DMSP SSM/I-SSMIS Passive Microwave Data, which contain the seasonal cycles (12 months long) of dominant SIC anomaly patterns. Then, the current SIC state index is determined by projecting observed SIC anomalies for latest 12 months to the S-EOFs. Assuming the current SIC anomalies follow the spatio-temporal evolution in the S-EOFs, we project the future (upto 12 months) SIC anomalies by multiplying the SI and the corresponding S-EOF and then taking summation. The predictive skill is assessed by hindcast experiments initialized at all the months for 1980-2010. When comparing predictive skill of SIC predicted by statistical model and NCEP CFS v2, the statistical model shows a higher skill in predicting sea ice concentration and extent.

  15. Dip-coating of nano-sized CeO2 on SiC membrane and its effect on thermal diffusivity.

    PubMed

    Park, Jihye; Jung, Miewon

    2014-05-01

    CeO2-SiC mixed composite membrane was fabricated with porous SiC ceramic and cerium oxide powder synthesized by sol-gel process. This CeO2-SiC membrane and SiC membrane which is made by the purified SiC ceramic were pressed and sintered in Ar atmosphere. And then, the SiC membrane was dip-coated by cerium oxide precursor sol solution and heat-treated in air. The surface morphology, particle size, porosity and structure analysis of the mixing and dip-coating SiC membrane were monitored by FE-SEM and X-ray diffraction analysis. Surface area, pore volume and pore diameter were determined by BET instrument. Thermal diffusivity was measured by laser flash method with increasing temperature. The relation between porosity and thermal diffusivity from different preparation process has been discussed on this study.

  16. Natural occurrence of silicon carbide in a diamondiferous kimberlite from Fuxian

    USGS Publications Warehouse

    Leung, I.; Guo, W.; Friedman, I.; Gleason, J.

    1990-01-01

    Considerable debate surrounds the existence of silicon carbide in nature, mostly owing to the problem of possible contamination by man-made SiC. Recently, Gurney1 reviewed reports of rare SiC inclusions in diamonds, and noted that SiC can only be regarded as a probable rather than proven cogenetic mineral. Here we report our observation of clusters of SiC coexisting with diamond in a kimberlite from Fuxian, China. Macrocrysts of ??-SiC are overgrown epitaxially by ??-SiC, and both polymorphs are structurally well ordered. We have also measured the carbon isotope compositions of SiC and diamonds from Fuxian. We find that SiC is more enriched in 12C than diamond by 20% relative to the PDB standard. Isotope fractionation might have occurred through an isotope exchange reaction in a common carbon reservoir. Silicon carbide may thus ultimately provide information on carbon cycling in the Earth's mantle.

  17. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    NASA Astrophysics Data System (ADS)

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-05-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  18. Application of Powder Diffraction Methods to the Analysis of Short- and Long-Range Atomic Order in Nanocrystalline Diamond and SiC: The Concept of the Apparent Lattice Parameter (alp)

    NASA Technical Reports Server (NTRS)

    Palosz, B.; Grzanka, E.; Gierlotka, S.; Stelmakh, S.; Pielaszek, R.; Bismayer, U.; Weber, H.-P.; Palosz, W.

    2003-01-01

    Two methods of the analysis of powder diffraction patterns of diamond and SiC nanocrystals are presented: (a) examination of changes of the lattice parameters with diffraction vector Q ('apparent lattice parameter', alp) which refers to Bragg scattering, and (b), examination of changes of inter-atomic distances based on the analysis of the atomic Pair Distribution Function, PDF. Application of these methods was studied based on the theoretical diffraction patterns computed for models of nanocrystals having (i) a perfect crystal lattice, and (ii), a core-shell structure, i.e. constituting a two-phase system. The models are defined by the lattice parameter of the grain core, thickness of the surface shell, and the magnitude and distribution of the strain field in the shell. X-ray and neutron experimental diffraction data of nanocrystalline SiC and diamond powders of the grain diameter from 4 nm up to micrometers were used. The effects of the internal pressure and strain at the grain surface on the structure are discussed based on the experimentally determined dependence of the alp values on the Q-vector, and changes of the interatomic distances with the grain size determined experimentally by the atomic Pair Distribution Function (PDF) analysis. The experimental results lend a strong support to the concept of a two-phase, core and the surface shell structure of nanocrystalline diamond and SiC.

  19. Streptococcus pyogenes strains containing emm12 and emm55 possess a novel gene coding for distantly related SIC protein.

    PubMed

    Hartas, J; Sriprakash, K S

    1999-01-01

    Streptococcus pyogenes infection and acute glomerulonephritis (AGN), a non-suppurtave disease, are endemic in the Aboriginal people of the Northern Territory (NT) of Australia. Vir typing, a locus-specific polymerase chain reaction (PCR)-based typing method [Gardiner, Hartas, Currie et al PCR Meth Appl 1995 4: 288-93], has revealed high divergence among the NT streptococcal strains. A total of 76 Vir types (VTs) representing about 95% of the NT isolates were screened for sic, a gene for streptococcal inhibitor of complement function, by PCR and hybridization. This revealed that seven VTs are positive for sic, and there are two classes of the gene: those closely related to sic (CRS) originally described by Akesson, Sjoholm & Bjorck [ J. Biol. Chem. 1996 271: 1081-8] and those distantly related to sic (DRS). Among the CRS-positive VTs, VT16, VT78 and VT91 have emm (gene for M protein) encoding type 1 M protein or related specificity, and VT8 and VT101 contain emm57 or related alleles. Chromosomal location of CRS in emm57 is different from that in emm1 or related strains. The DRS-positive VT18 and VT52 contained emm55 and emm12 respectively, which are phylogenetically related. Strains of S. pyogenes types 1, 12, 55 and 57 are known to be associated with AGN. Restricted distribution of CRS and DRS among the M types historically associated with AGN suggests that these sic alleles may have a role in AGN pathogenesis. Copyright 1999 Academic Press.

  20. Empty substrate integrated waveguide technology for E plane high-frequency and high-performance circuits

    NASA Astrophysics Data System (ADS)

    Belenguer, Angel; Cano, Juan Luis; Esteban, Héctor; Artal, Eduardo; Boria, Vicente E.

    2017-01-01

    Substrate integrated circuits (SIC) have attracted much attention in the last years because of their great potential of low cost, easy manufacturing, integration in a circuit board, and higher-quality factor than planar circuits. A first suite of SIC where the waves propagate through dielectric have been first developed, based on the well-known substrate integrated waveguide (SIW) and related technological implementations. One step further has been made with a new suite of empty substrate integrated waveguides, where the waves propagate through air, thus reducing the associated losses. This is the case of the empty substrate integrated waveguide (ESIW) or the air-filled substrate integrated waveguide (air-filled SIW). However, all these SIC are H plane structures, so classical H plane solutions in rectangular waveguides have already been mapped to most of these new SIC. In this paper a novel E plane empty substrate integrated waveguide (ESIW-E) is presented. This structure allows to easily map classical E plane solutions in rectangular waveguide to this new substrate integrated solution. It is similar to the ESIW, although more layers are needed to build the structure. A wideband transition (covering the frequency range between 33 GHz and 50 GHz) from microstrip to ESIW-E is designed and manufactured. Measurements are successfully compared with simulation, proving the validity of this new SIC. A broadband high-frequency phase shifter (for operation from 35 GHz to 47 GHz) is successfully implemented in ESIW-E, thus proving the good performance of this new SIC in a practical application.

  1. n/a

    NASA Image and Video Library

    1962-10-26

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC test stand, related facilities were built during this time. Built to the north of the massive S-IC test stand, was the F-1 Engine test stand. The F-1 test stand, a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base, was designed to assist in the development of the F-1 Engine. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This photo, taken October 26, 1962, depicts the excavation process of the single engine F-1 stand.

  2. n/a

    NASA Image and Video Library

    1962-11-15

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC test stand, related facilities were built during this time. Built to the north of the massive S-IC test stand, was the F-1 Engine test stand. The F-1 test stand, a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base, was designed to assist in the development of the F-1 Engine. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This photo, taken November 15, 1962, depicts the excavation process of the single engine F-1 stand site.

  3. Navy Shipboard Lasers for Surface, Air, and Missile Defense: Background and Issues for Congress

    DTIC Science & Technology

    2013-06-27

    include silicon carbide ( SiC )- based transistors, transformers and power converters. “ SiC is important because it improves power quality and reduces size...existing shipboard gun systems. An airborne mirror , perhaps mounted on an aerostat,11 could bounce light from a shipboard laser, so as to permit non-line...super conducting RF electron beam injectors, advanced high power cathode technologies, high power compact amplifiers, and advanced mirrors

  4. Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Static Magnetic Fields

    NASA Technical Reports Server (NTRS)

    Jauss, T.; SorgenFrei, T.; Croell, A.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

    2014-01-01

    In the photovoltaics industry, the largest market share is represented by solar cells made from multicrystalline silicon, which is grown by directional solidification. During the growth process, the silicon melt is in contact with the silicon nitride coated crucible walls and the furnace atmosphere which contains carbon monoxide. The dissolution of the crucible coating, the carbon bearing gas, and the carbon already present in the feedstock, lead to the precipitation of silicon carbide, and silicon nitride, at later stages of the growth process. The precipitation of Si3N4 and SiC particles of up to several hundred micrometers in diameter leads to severe problems during the wire sawing process for wafering the ingots. Furthermore the growth of the silicon grains can be negatively influenced by the presence of particles, which act as nucleation sources and lead to a grit structure of small grains and are sources for dislocations. If doped with Nitrogen from the dissolved crucible coating, SiC is a semi conductive material, and can act as a shunt, short circuiting parts of the solar cell. For these reasons, the incorporation of such particles needs to be avoided. In this contribution we performed model experiments in which the transport of intentionally added SiC particles and their interaction with the solid-liquid interface during float zone growth of silicon in strong steady magnetic fields was investigated. SiC particles of 7µm and 60µm size are placed in single crystal silicon [100] and [111] rods of 8mm diameter. This is achieved by drilling a hole of 2mm diameter, filling in the particles and closing the hole by melting the surface of the rod until a film of silicon covers the hole. The samples are processed under a vacuum of 1x10(exp -5) mbar or better, to prevent gas inclusions. An oxide layer to suppress Marangoni convection is applied by wet oxidation. Experiments without and with static magnetic field are carried out to investigate the influence of melt convection on the distribution of particles and their incorporation into the crystal. The field strengths applied by a superconducting magnet are 1T, 3T, 4.5T, and 5T. The increase in field strength dampens the melt flow, and so this study provides comparative data to the crystal growth experiment to be carried out onboard the sounding rocket mission TEXUS 51, where purely diffusive growth condition will be achieved under microgravity conditions.

  5. Thermostructural Properties Of Sic/Sic Panels With 2.5d And 3d Fiber Architectures

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; DeCarlo, J. A.; Bhatt, R. H.; Jaskowiak, M. H.

    2005-01-01

    CMC hot-section components in advanced engines for power and propulsion will typically require high cracking strength, high ultimate strength and strain, high creep- rupture resistance, and high thermal conductivity in all directions. In the past, NASA has demonstrated fabrication of a variety of SiC/SiC flat panels and round tubes with various 2D fiber architectures using the high-modulus high-performance Sylramic-iBN Sic fiber and Sic-based matrices derived by CVI, MI, and/or PIP processes. The thermo- mechanical properties of these CMC have shown state-of-the-art performance, but primarily in the in-plane directions. Currently NASA is extending the thermostructural capability of these SiC/SiC systems in the thru-thickness direction by using various 2.5D and 3D fiber architectures. NASA is also using specially designed fabrication steps to optimize the properties of the BN-based interphase and Sic-based matrices. In this study, Sylramic-iBN/SiC panels with 2D plain weave, 2.5D satin weave, 2.5D ply-to-ply interlock weave, and 3D angle interlock fiber architectures, all woven at AITI, were fabricated using matrix densification routes previously established between NASA and GEPSC for CVI-MI processes and between NASA and Starfire-Systems for PIP processes. Introduction of the 2.5 D fiber architecture along with an improved matrix process was found to increase inter-laminar tensile strength from 1.5 -2 to 3 - 4 ksi and thru-thickness thermal conductivity from 15-20 to 30-35 BTU/ft.hr.F with minimal reduction in in-plane strength and creep-rupture properties. Such improvements should reduce thermal stresses and increase the thermostructural operating envelope for SiC/SiC engine components. These results are analyzed to offer general guidelines for selecting fiber architectures and constituent processes for high-performance SiC/SiC engine components.

  6. 40 CFR 432.1 - General Applicability.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... STANDARDS MEAT AND POULTRY PRODUCTS POINT SOURCE CATEGORY § 432.1 General Applicability. As defined more... the following industrial classification codes: Standard industrial classification 1 North Americanindustrial classification system 2 SIC 0751 NAICS 311611. SIC 2011 NAICS 311612. SIC 2013 NAICS 311615. SIC...

  7. Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony (Inventor)

    1993-01-01

    The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques.

  8. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

    NASA Astrophysics Data System (ADS)

    Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

    2016-01-01

    Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

  9. Design And Development The Ixo Mirrors By Innovative Slumping Glass Technologies

    NASA Astrophysics Data System (ADS)

    Pareschi, Giovanni; Ghigo, M.; Basso, S.; Citterio, O.; Canestrari, R.; Dell'Orto, E.; Conconi, P.; Parodi, G.; Proserpio, L.

    2009-01-01

    At INAF Brera Astronomical Observatory development activities are ongoing aiming at the design and development of the IXO mirrors based on slumping glass technique. Our approach is based on the use of thermal slumping of thin glass optics and it presents a number of innovative solution for the implementation. In particular our approach foresees the use of a ceramic mould made of SiC for thermal shaping of the glass segments, which occurs exerting a proper pressure during the moulding process. A thin layer (a few hundred Angstroms) of Pt or Ir is previously deposited on the glass segment, to prevent the adhesion on the SiC mould surface. Therefore this coating not only acts as a release agent of the process but, at the same time, it has also the role of reflecting layer of the X-ray mirror (in a sense like it was the role of gold in the Ni electroforming replication method used for the XMM shells). SiC is chosen for its very good T/M characteristics and, in particular, a very high thermal conductivity and very low CTE. SiC mould will be produced via injection moulding process, followed by a the application of a cladding layer (a few tens microns) application of CVD SiC for allowing a superpolishing of the surface until a roughness of a few Angstrom rms is achieved. Once the mirror segments are produced, they are integrated in petals by means of air-bearings supports, that allows us to maintain the proper shape of the segments without deformations. The segments are stacked into the petals by the use of connecting ribs, glued to the front surface of each mirror and to the rear of the next one.

  10. Characterizing the Chemical Stability of High Temperature Materials for Application in Extreme Environments

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth

    2005-01-01

    The chemical stability of high temperature materials must be known for use in the extreme environments of combustion applications. The characterization techniques available at NASA Glenn Research Center vary from fundamental thermodynamic property determination to material durability testing in actual engine environments. In this paper some of the unique techniques and facilities available at NASA Glenn will be reviewed. Multiple cell Knudsen effusion mass spectrometry is used to determine thermodynamic data by sampling gas species formed by reaction or equilibration in a Knudsen cell held in a vacuum. The transpiration technique can also be used to determine thermodynamic data of volatile species but at atmospheric pressures. Thermodynamic data in the Si-O-H(g) system were determined with this technique. Free Jet Sampling Mass Spectrometry can be used to study gas-solid interactions at a pressure of one atmosphere. Volatile Si(OH)4(g) was identified by this mass spectrometry technique. A High Pressure Burner Rig is used to expose high temperature materials in hydrocarbon-fueled combustion environments. Silicon carbide (SiC) volatility rates were measured in the burner rig as a function of total pressure, gas velocity and temperature. Finally, the Research Combustion Lab Rocket Test Cell is used to expose high temperature materials in hydrogen/oxygen rocket engine environments to assess material durability. SiC recession due to rocket engine exposures was measured as a function of oxidant/fuel ratio, temperature, and total pressure. The emphasis of the discussion for all techniques will be placed on experimental factors that must be controlled for accurate acquisition of results and reliable prediction of high temperature material chemical stability.

  11. Advanced Constituents and Processes for Ceramic Composite Engine Components

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; DiCarlo, J. A.; Bhatt, R. T.

    2004-01-01

    The successful replacement of metal alloys by ceramic matrix composites (CMC) in hot-section engine components will depend strongly on optimizing the processes and properties of the CMC microstructural constituents so that they can synergistically provide the total CMC system with improved temperature capability and with the key properties required by the components for long-term structural service. This presentation provides the results of recent activities at NASA aimed at developing advanced silicon carbide (Sic) fiber-reinforced hybrid Sic matrix composite systems that can operate under mechanical loading and oxidizing conditions for hundreds of hours at 2400 and 2600 F, temperatures well above current metal capability. These SiC/SiC composite systems are lightweight (-30% metal density) and, in comparison to monolithic ceramics and carbon fiber-reinforced ceramic composites, are able to reliably retain their structural properties for long times under aggressive engine environments. It is shown that the improved temperature capability of the SiC/SiC systems is related first to the NASA development of the Sylramic-iBN Sic fiber, which displays high thermal stability, creep resistance, rupture resistance, and thermal conductivity, and possesses an in-situ grown BN surface layer for added environmental durability. This fiber is simply derived from Sylramic Sic fiber type that is currently produced at ATK COI Ceramics. Further capability is then derived by using chemical vapor infiltration (CVI) to form the initial portion of the hybrid Sic matrix. Because of its high creep resistance and thermal conductivity, the CVI Sic matrix is a required base constituent for all the high temperature SiC/SiC systems. By subsequently thermo- mechanical-treating the CMC preform, which consists of the S ylramic-iBN fibers and CVI Sic matrix, process-related defects in the matrix are removed, further improving matrix and CMC creep resistance and conductivity.

  12. A comparative study on carbon, boron-nitride, boron-phosphide and silicon-carbide nanotubes based on surface electrostatic potentials and average local ionization energies.

    PubMed

    Esrafili, Mehdi D; Behzadi, Hadi

    2013-06-01

    A density functional theory study was carried out to predict the electrostatic potentials as well as average local ionization energies on both the outer and the inner surfaces of carbon, boron-nitride (BN), boron-phosphide (BP) and silicon-carbide (SiC) single-walled nanotubes. For each nanotube, the effect of tube radius on the surface potentials and calculated average local ionization energies was investigated. It is found that SiC and BN nanotubes have much stronger and more variable surface potentials than do carbon and BP nanotubes. For the SiC, BN and BP nanotubes, there are characteristic patterns of positive and negative sites on the outer lateral surfaces. On the other hand, a general feature of all of the systems studied is that stronger potentials are associated with regions of higher curvature. According to the evaluated surface electrostatic potentials, it is concluded that, for the narrowest tubes, the water solubility of BN tubes is slightly greater than that of SiC followed by carbon and BP nanotubes.

  13. Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

    DOE PAGES

    Ji, Shiqi; Zheng, Sheng; Wang, Fei; ...

    2017-07-06

    The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

  14. Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ji, Shiqi; Zheng, Sheng; Wang, Fei

    The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

  15. SiC Multi-Chip Power Modules as Power-System Building Blocks

    NASA Technical Reports Server (NTRS)

    Lostetter, Alexander; Franks, Steven

    2007-01-01

    The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

  16. Precipitation Sequence of a SiC Particle Reinforced Al-Mg-Si Alloy Composite

    NASA Astrophysics Data System (ADS)

    Shen, Rujuan; Wang, Yihan; Guo, Baisong; Song, Min

    2016-11-01

    In this study, the precipitation sequence of a 5 vol.% SiC particles reinforced Al-1.12 wt.%Mg-0.77 wt.%Si alloy composite fabricated by traditional powder metallurgy method was investigated by transmission electron microscopy and hardness measurements. The results indicated that the addition of SiC reinforcements not only suppresses the initial aging stage but also influences the subsequent precipitates. The precipitation sequence of the composite aged at 175 °C can be described as: Guinier-Preston (G.P.) zone → β″ → β' → B', which was confirmed by high-resolution transmission electron microscopy. This work might provide the guidance for the design and fabrication of hardenable automobile body sheet by Al-based composites with enhanced mechanical properties.

  17. Modeling the Thermostructural Stability of Melt-infiltrated Sic/sic Composites

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.; Bhatt, Ramakrishna T.; McCue, Terry R.

    2003-01-01

    SiC/SiC composites developed by NASA with Sylramic-iBN fibers and melt-infiltrated (MI) SiC-Si matrices have demonstrated 1000-hour rupture life in air at 100 MPa and 1315OC. Recently it has been determined that a major factor controlling the long-term rupture life of these composites is not environment or stress, but an intrinsic microstructural and strength instability caused by a thermally-induced silicon attack of the Sic fibers. The objective of this paper is to present a simple diffusion-based analytical model which predicts well the observed effects of stress-free thermal exposure on the residual tensile strength of Sylramic-iBN/SiC-Si composites. The practical implications of the model for SiC/SiC composites with MI matrices are discussed.

  18. Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.

    2015-09-14

    Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reactionmore » between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.« less

  19. Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks

    NASA Astrophysics Data System (ADS)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, J.; Qadri, S. N.; Caldwell, J. D.

    2015-09-01

    Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reaction between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.

  20. Photoluminescence of etched SiC nanowires

    NASA Astrophysics Data System (ADS)

    Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

    2010-10-01

    SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

  1. Chemical reactivity of CVC and CVD SiC with UO 2 at high temperatures

    DOE PAGES

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO 2 pellets and evaluated for their potential chemical reaction with UO 2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO 2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO 2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive thanmore » CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi 2, and U 3Si 2 as a result of SiC reaction with UO 2.« less

  2. Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC)

    DTIC Science & Technology

    2014-03-01

    velocity was 440 ± 5.6 m/s. Two flash x-rays were set up above the shot line in front of the light gas gun to measure the velocity of the projectile...long, high-density polyurethane foam sabot. A sabot stripper on the muzzle of the gun disengaged the sabot from the sphere prior to velocity...the masses were consistent to achieve a constant velocity. The projectile traveled from the gun, through a break screen which triggered two flash x

  3. Temperature dependence of 2DEG and excitonic optical transitions in AlGaN/GaN heterostructures on SiC

    NASA Astrophysics Data System (ADS)

    Litton, C. W.; Reynolds, D. C.; Hoelscher, J. E.; Collins, T. C.; Fitch, R.; Via, G. D.; Gillespie, J.; Crespo, A.; Jenkins, T. J.; Worley, R.; Saxler, A.

    2005-05-01

    Four (4) unique optical transitions are reported in both the emission and reflection spectra of high-quality AlGaN/GaN heterostructures. Study of the shifts of spectral peak energies and their intensity variations with temperature, reveal that these transitions arise from Free Exciton recombination and transitions between the A- and B-valence bands and the excited states of the 2-dimensional electron gas (2DEG) at the heterointerface.

  4. Finite Element Model Characterization Of Nano-Composite Thermal And Environmental Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Yamada, Yoshiki; Zhu, Dongming

    2011-01-01

    Thermal and environmental barrier coatings have been applied for protecting Si based ceramic matrix composite components from high temperature environment in advanced gas turbine engines. It has been found that the delamination and lifetime of T/EBC systems generally depend on the initiation and propagation of surface cracks induced by the axial mechanical load in addition to severe thermal loads. In order to prevent T/EBC systems from surface cracking and subsequent delamination due to mechanical and thermal stresses, T/EBC systems reinforced with nano-composite architectures have showed promise to improve mechanical properties and provide a potential crack shielding mechanism such as crack bridging. In this study, a finite element model (FEM) was established to understand the potential beneficial effects of nano-composites systems such as SiC nanotube-reinforced oxide T/EBC systems.

  5. Zirconia toughened SiC whisker reinforced alumina composites small business innovation research

    NASA Technical Reports Server (NTRS)

    Loutfy, R. O.; Stuffle, K. L.; Withers, J. C.; Lee, C. T.

    1987-01-01

    The objective of this phase 1 project was to develop a ceramic composite with superior fracture toughness and high strength, based on combining two toughness inducing materials: zirconia for transformation toughening and SiC whiskers for reinforcement, in a controlled microstructure alumina matrix. The controlled matrix microstructure is obtained by controlling the nucleation frequency of the alumina gel with seeds (submicron alpha-alumina). The results demonstrate the technical feasibility of producing superior binary composites (Al2O3-ZrO2) and tertiary composites (Al2O3-ZrO2-SiC). Thirty-two composites were prepared, consolidated, and fracture toughness tested. Statistical analysis of the results showed that: (1) the SiC type is the key statistically significant factor for increased toughness; (2) sol-gel processing with a-alumina seed had a statistically significant effect on increasing toughness of the binary and tertiary composites compared to the corresponding mixed powder processing; and (3) ZrO2 content within the range investigated had a minor effect. Binary composites with an average critical fracture toughness of 6.6MPam sup 1/2, were obtained. Tertiary composites with critical fracture toughness in the range of 9.3 to 10.1 MPam sup 1/2 were obtained. Results indicate that these composites are superior to zirconia toughened alumina and SiC whisker reinforced alumina ceramic composites produced by conventional techniques with similar composition from published data.

  6. Ultralightweight, low expansion, fiber reinforced SiC composite lithography stage. Final technical report, 17 December 1998--17 June 1999

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Robichaud, J.L.

    1999-06-17

    During the Phase 1 SBIR, SSG has integrated a number of advanced Silicon Carbide (SiC) materials to produce an innovative, lightweight, fracture tough, dimensionally stable, composite mask platen for use on an SVGL Microalign instrument. The fiber reinforced SiC material used has several critical advantages when compared to other competing materials: significantly improved lightweighting (SiC provides a specific stiffness which can be 8x better than aluminum, 8x better than Zerodur, and 2x better than carbon fiber/graphite epoxy based composite materials); excellent long term dimensional stability (through low CTE and no moisture absorption); superior damping (20x better than aluminum 2x bettermore » than carbon fiber/graphite epoxy). All of these advantages combine to yield an optimal material for high speed translation stage applications. During the Phase 1 SBIR SSG has designed, modeled, fabricated, and tested an ultralightweight composite SiC platen which is currently being integrated onto an SVGL Microalign instrument. The platen is ultralightweight (4 lbs with overall dimensions of approx. 18 inch x 10 inch x 1.5 inch) and stiff (first resonant mode at 770 Hz), and meets all of SVG`s operational and functional requirements. SVGL has supported the Phase 1 effort by providing co-funding during Phase 1, and this support is intended to continue through Phase 2.« less

  7. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  8. Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Oku, Takeo, E-mail: oku@mat.usp.ac.jp; Matsumoto, Taisuke; Ohishi, Yuya

    A power storage system using spherical silicon (Si) solar cells, maximum power point tracking charge controller, lithium-ion battery and a direct current-alternating current (DC-AC) inverter was constructed. Performance evaluation of the DC-AC inverter was carried out, and the DC-AC conversion efficiencies of the SiC field-effect transistor (FET) inverter was improved compared with those of the ordinary Si-FET based inverter.

  9. Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Yiheng; Xia, Guangrui; Yasuda, Hiroshi

    2014-10-14

    The use of carbon (C) in SiGe base layers is an important approach to control the base layer dopant phosphorus (P) diffusion and thus enhance PNP heterojunction bipolar transistor (HBT) performance. This work quantitatively investigated the carbon impacts on P diffusion in Si₀.₈₂Ge₀.₁₈:C and Si:C under rapid thermal anneal conditions. The carbon molar fraction is up to 0.32%. The results showed that the carbon retardation effect on P diffusion is less effective for Si₀.₈₂Ge₀.₁₈:C than for Si:C. In Si₀.₈₂Ge₀.₁₈:C, there is an optimum carbon content at around 0.05% to 0.1%, beyond which more carbon incorporation does not retard P diffusionmore » any more. This behavior is different from the P diffusion behavior in Si:C and the B in Si:C and low Ge SiGe:C, which can be explained by the decreased interstitial-mediated diffusion fraction f{sub I}{sup P,SiGe} to 95% as Ge content increases to 18%. Empirical models were established to calculate the time-averaged point defect concentrations and effective diffusivities as a function of carbon and was shown to agree with previous studies on boron, phosphorus, arsenic and antimony diffusion with carbon.« less

  10. A Comparative Study on Permanent Mold Cast and Powder Thixoforming 6061 Aluminum Alloy and Sicp/6061Al Composite: Microstructures and Mechanical Properties.

    PubMed

    Zhang, Xuezheng; Chen, Tijun; Qin, He; Wang, Chong

    2016-05-24

    Microstructural and mechanical characterization of 10 vol% SiC particles (SiC p ) reinforced 6061 Al-based composite fabricated by powder thixoforming (PTF) was investigated in comparison with the PTF and permanent mold cast (PMC) 6061 monolithic alloys. The results reveal that the microstructure of the PMC alloy consists of coarse and equiaxed α dendrites and interdendritic net-like eutectic phases. However, the microstructure of the PTF composite, similar to that of the PTF alloy, consists of near-spheroidal primary particles and intergranular secondarily solidified structures except SiC p , which are distributed in the secondarily solidified structures. The eutectics amount in the PTF materials is distinctly lower than that in the PMC alloy, and the microstructures of the former materials are quite compact while that of the latter alloy is porous. Therefore, the PTF alloy shows better tensile properties than the PMC alloy. Owing to the existence of the SiC reinforcing particles, the PTF composite attains an ultimate tensile strength and yield strength of 230 MPa and 128 MPa, representing an enhancement of 27.8% and 29.3% than those (180 MPa and 99 MPa) of the PTF alloy. A modified model based on three strengthening mechanisms was proposed to calculate the yield strength of the PTF composite. The obtained theoretical results were quite consistent with the experimental data.

  11. Ab initio study of friction of graphene flake on graphene/graphite or SiC surface

    NASA Astrophysics Data System (ADS)

    Gulseren, Oguz; Tayran, Ceren; Sayin, Ceren Sibel

    Recently, the rich dynamics of graphene flake on graphite or SiC surfaces are revealed from atomic force microcopy experiments. The studies toward to the understanding of microscopic origin of friction are getting a lot of attention. Despite the several studies of these systems using molecular dynamics methods, density functional theory based investigations are limited because of the huge system sizes. In this study, we investigated the frictional force on graphene flake on graphite or SiC surfaces from pseudopotential planewave calculations based on density functional theory. In both cases, graphene flake (24 C) on graphite or SiC surface, bilayer flake is introduced by freezing the top layer as well as the bottom layer of the surface slab. After fixing the load with these frozen layers, we checked the relative motion of the flake over the surface. A minimum energy is reached when the flake is moved on graphene to attain AB stacking. We also conclude that edge reconstruction because of the finite size of the flake is very critical for frictional properties of the flake; therefore the saturation of dangling bonds with hydrogen is also addressed. Not only the symmetric configurations remaining parameter space is extensively studied. Supported by TUBITAK Project No: 114F162. This work is supported by TUBITAK Project No: 114F162.

  12. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with CVD-SiC and tested in torsion-shear prior to and after neutron irradiation. However, many of these miniature torsion specimens fail out-of-plane within the CVD-SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated joint strengths to determine the effects of themore » irradiation. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated joint test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.« less

  13. Self-Interaction Corrected Electronic Structure and Energy Gap of CuAlO2 beyond Local Density Approximation

    NASA Astrophysics Data System (ADS)

    Nakanishi, Akitaka

    2011-05-01

    We implemented a self-interaction correction (SIC) into first-principles calculation code to go beyond local density approximation and applied it to CuAlO2. Our simulation shows that the valence band width calculated within the SIC is narrower than that calculated without the SIC because the SIC makes the d-band potential deeper. The energy gap calculated within the SIC expands and is close to experimental data.

  14. Uranium extraction from TRISO-coated fuel particles using supercritical CO2 containing tri-n-butyl phosphate.

    PubMed

    Zhu, Liyang; Duan, Wuhua; Xu, Jingming; Zhu, Yongjun

    2012-11-30

    High-temperature gas-cooled reactors (HTGRs) are advanced nuclear systems that will receive heavy use in the future. It is important to develop spent nuclear fuel reprocessing technologies for HTGR. A new method for recovering uranium from tristructural-isotropic (TRISO-) coated fuel particles with supercritical CO(2) containing tri-n-butyl phosphate (TBP) as a complexing agent was investigated. TRISO-coated fuel particles from HTGR fuel elements were first crushed to expose UO(2) pellet fuel kernels. The crushed TRISO-coated fuel particles were then treated under O(2) stream at 750°C, resulting in a mixture of U(3)O(8) powder and SiC shells. The conversion of U(3)O(8) into solid uranyl nitrate by its reaction with liquid N(2)O(4) in the presence of a small amount of water was carried out. Complete conversion was achieved after 60 min of reaction at 80°C, whereas the SiC shells were not converted by N(2)O(4). Uranyl nitrate in the converted mixture was extracted with supercritical CO(2) containing TBP. The cumulative extraction efficiency was above 98% after 20 min of online extraction at 50°C and 25 MPa, whereas the SiC shells were not extracted by TBP. The results suggest an attractive strategy for reprocessing spent nuclear fuel from HTGR to minimize the generation of secondary radioactive waste. Copyright © 2012 Elsevier B.V. All rights reserved.

  15. Effects of in situ synthesized mullite whisker on mechanical properties of Al2O3-SiC composite by microwave sintering

    NASA Astrophysics Data System (ADS)

    Dang, Xudan; Wei, Meng; Fan, Bingbing; Guan, Keke; Zhang, Rui; Long, Weimin; Zhang, Hongsong

    2017-06-01

    In situ synthesis of mullite whisker was introduced to Al2O3-SiC composite by microwave sintering. The effects of sintering parameters (sintering temperature, holding time and SiC particle size) on thermal shock resistance of Al2O3-SiC composite were also studied in this paper. Original SiC particles coated with SiO2 by a sol-gel method were reacted with Al2O3 particles, resulting in the in situ growth of mullite. The phase composition was identified by x-ray diffraction (XRD). The bridging of mullite whisker between Al2O3 and SiC particles was observed by scanning electron microscopy (SEM) analysis. The thermal shock resistance of samples was investigated through the combination of water quenching and three-point bending methods. The results show that the thermal shock resistance of Al2O3-SiC composite with mullite whisker reinforced remarkably, indicating better mechanical properties than the Al2O3-SiC composite without mullite whisker. Finally, the optimum process parameters (the sintering temperature of 1500 °C, the holding time of 30 min, and the SiC particle size of 5 µm) for toughening Al2O3-SiC composite by in situ synthesized mullite whisker were obtained.

  16. The Mine Locomotive Wireless Network Strategy Based on Successive Interference Cancellation

    PubMed Central

    Wu, Liaoyuan; Han, Jianghong; Wei, Xing; Shi, Lei; Ding, Xu

    2015-01-01

    We consider a wireless network strategy based on successive interference cancellation (SIC) for mine locomotives. We firstly build the original mathematical model for the strategy which is a non-convex model. Then, we examine this model intensively, and figure out that there are certain regulations embedded in it. Based on these findings, we are able to reformulate the model into a new form and design a simple algorithm which can assign each locomotive with a proper transmitting scheme during the whole schedule procedure. Simulation results show that the outcomes obtained through this algorithm are improved by around 50% compared with those that do not apply the SIC technique. PMID:26569240

  17. Processing of presolar grains around post-AGB stars: SiC as the carrier of the ``21''μ m feature

    NASA Astrophysics Data System (ADS)

    Hofmeister, A. M.; Speck, A. K.

    2003-12-01

    Intermediate mass stars (0.8-8.0 Msolar) eventually evolve on the H-R diagram, up the asymptotic giant branch (AGB). The intensive mass loss which characterizes the AGB produces a circumstellar shell of dust and neutral gas. At the end of the AGB, mass loss virtually stops and the circumstellar shell begins to drift away from the star. At the same time the central star begins to shrink and heat up. This is the proto-planetary nebula (PPN) phase. Some PPNe exhibit an enigmatic feature in their infrared (IR) spectra at ˜21μ m. This feature is not seen in the spectra of either the precursors to PPNe, the AGB stars, or the successors of PPNe, ``normal'' planetary nebulae (PNe). However the ``21''μ m feature has been seen in the spectra of PNe with Wolf-Rayet central stars. Therefore the carrier of this feature is unlikely to be a transient species that only exists in the PPNe phase. This feature has been attributed to various molecular and solid state species, none of which satisfy all constraints, although titanium carbide (TiC) and polycyclic aromatic hydrocarbons (PAHs) have seemed the most viable. We present new laboratory data for silicon carbide (SiC) and show that it has a spectral feature which is a good candidate for the carrier of the 21μ m feature. The SiC spectral feature appears at approximately the same wavelength (depending on polytype/grain size) and has the same asymmetric profile as the observed astronomical feature. We suggest that processing and cooling of the SiC grains known to exist around carbon-rich AGB stars are responsible for the emergence of the enigmatic 21μ m feature. The emergence of this feature in the spectra of post-AGB stars demonstrates the processing of dust due to the changing physical environments around evolving stars.

  18. Petroleum and hazardous material releases from industrial facilities associated with Hurricane Katrina.

    PubMed

    Santella, Nicholas; Steinberg, Laura J; Sengul, Hatice

    2010-04-01

    Hurricane Katrina struck an area dense with industry, causing numerous releases of petroleum and hazardous materials. This study integrates information from a number of sources to describe the frequency, causes, and effects of these releases in order to inform analysis of risk from future hurricanes. Over 200 onshore releases of hazardous chemicals, petroleum, or natural gas were reported. Storm surge was responsible for the majority of petroleum releases and failure of storage tanks was the most common mechanism of release. Of the smaller number of hazardous chemical releases reported, many were associated with flaring from plant startup, shutdown, or process upset. In areas impacted by storm surge, 10% of the facilities within the Risk Management Plan (RMP) and Toxic Release Inventory (TRI) databases and 28% of SIC 1311 facilities experienced accidental releases. In areas subject only to hurricane strength winds, a lower fraction (1% of RMP and TRI and 10% of SIC 1311 facilities) experienced a release while 1% of all facility types reported a release in areas that experienced tropical storm strength winds. Of industrial facilities surveyed, more experienced indirect disruptions such as displacement of workers, loss of electricity and communication systems, and difficulty acquiring supplies and contractors for operations or reconstruction (55%), than experienced releases. To reduce the risk of hazardous material releases and speed the return to normal operations under these difficult conditions, greater attention should be devoted to risk-based facility design and improved prevention and response planning.

  19. Ultra-High Temperature Steam Corrosion of Complex Silicates for Nuclear Applications: A Computational Study

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rashkeev, Sergey N.; Glazoff, Michael V.; Tokuhiro, Akira

    2014-01-01

    Stability of materials under extreme conditions is an important issue for safety of nuclear reactors. Presently, silicon carbide (SiC) is being studied as a cladding material candidate for fuel rods in boiling-water and pressurized water-cooled reactors (BWRs and PWRs) that would substitute or modify traditional zircaloy materials. The rate of corrosion of the SiC ceramics in hot vapor environment (up to 2200 degrees C) simulating emergency conditions of light water reactor (LWR) depends on many environmental factors such as pressure, temperature, viscosity, and surface quality. Using the paralinear oxidation theory developed for ceramics in the combustion reactor environment, we estimatedmore » the corrosion rate of SiC ceramics under the conditions representing a significant power excursion in a LWR. It was established that a significant time – at least 100 h – is required for a typical SiC braiding to significantly degrade even in the most aggressive vapor environment (with temperatures up to 2200 °C) which is possible in a LWR at emergency condition. This provides evidence in favor of using the SiC coatings/braidings for additional protection of nuclear reactor rods against off-normal material degradation during power excursions or LOCA incidents. Additionally, we discuss possibilities of using other silica based ceramics in order to find materials with even higher corrosion resistance than SiC. In particular, we found that zircon (ZrSiO4) is also a very promising material for nuclear applications. Thermodynamic and first-principles atomic-scale calculations provide evidence of zircon thermodynamic stability in aggressive environments at least up to 1535 degrees C.« less

  20. Geometric consequences of ductile fabric development from brittle shear faults in mafic melt sheets: Evidence from the Sudbury Igneous Complex, Canada

    NASA Astrophysics Data System (ADS)

    Lenauer, Iris; Riller, Ulrich

    2012-02-01

    Compared to felsic igneous rocks the genetic relationship between brittle and ductile fabric development and its influence on the geometry of deformed mafic melt sheets has received little attention in structural analyses. We explore these relationships using the Sudbury Igneous Complex (SIC) as an example. The SIC is the relic of a layered impact melt sheet that was transformed into a fold basin, the Sudbury Basin, during Paleoproterozoic deformation at the southern margin of the Archean Superior Province. We studied brittle and ductile strain fabrics on the outcrop and map scales in the southern Sudbury Basin, notably in the Norite and Quartz Gabbro layers of the SIC. Here, deformation is heterogeneous and occurred under variable rheological conditions, evident by the development of brittle shear fractures, brittle-ductile shear zones and pervasive ductile strain. The mineral fabrics formed under low- to middle greenschist-facies metamorphism, whereby brittle deformation caused hydrolytic weakening and ductile fabric development. Principal strain axes inferred from all structural elements are collinear and point to a single deformation regime that led to thinning of SIC layers during progressive deformation. Ductile fabric development profoundly influenced the orientation of SIC material planes, such as lithological contacts and magmatic mineral fabrics. More specifically, these planar structural elements are steep where the SIC underwent large magnitudes of thinning, i.e., in the south limb of the Sudbury Basin. Here, the actual tilt component of material planes is likely smaller than its maximum total rotation (60°) inferred from inclined igneous layering in the Norite. Our field-based study shows that ductile fabric development from brittle faults can have a profound influence on the rotational components of primary material planes in deformed igneous melt sheets.

  1. Spark plasma sintering of silicon carbide, multi-walled carbon nanotube and graphene reinforced zirconium diboride ceramic composite

    NASA Astrophysics Data System (ADS)

    Balaraman Yadhukulakrishnan, Govindaraajan

    Scope and Method of Study: Space vehicles re-entering the earth's atmosphere experience very high temperatures due to aerodynamic heating. Ultra-high temperature ceramics (UHTC) with melting point higher than 3200°C are promising materials for thermal protection systems of such space vehicles re-entering the earth's atmosphere. Among several UHTC systems ZrB2 based ceramic composites are particularly important for thermal protection systems due to their better mechanical and thermoelectric properties and high oxidation resistance. In this study spark plasma sintering of SiC, carbon nanotubes (CNT) and graphene nano platelets (GNP) reinforced ZrB2 ultra-high temperature ceramic matrix composites is reported. Findings and Conclusions: Systematic investigations on the effect of reinforcement type (SiC, CNTs and GNP) and content (10-40 vol.% SiC, 2-6 vol.% CNTs and 2-6 vol.% GNP) on densification behavior, microstructure development, and mechanical properties (microhardness, bi-axial flexural strength, and indentation fracture toughness) are reported. With the similar SPS parameters near-full densification (>99% relative density) was achieved with 10-40 vol.% SiC, 4-6 vol.% CNT reinforced composites. Highly dense composites were obtained in 4-6 vol.% GNP reinforced composites. The SiC, CNT and GNP reinforcement improved the indentation fracture toughness of the composites through a range of toughening mechanisms, including particle shearing, crack deflection at the particle-matrix interface, and grain pull-outs for ZrB2-SiC composites, CNT pull-outs and crack deflection in ZrB2-CNT composites and crack deflection, crack bridging and GNP sheet pull-out for ZrB2 -GNP composites.

  2. Consolidation of silicon nitride without additives. [for gas turbine engine efficiency increase

    NASA Technical Reports Server (NTRS)

    Sikora, P. F.; Yeh, H. C.

    1976-01-01

    The use of ceramics for gas turbine engine construction might make it possible to increase engine efficiency by raising operational temperatures to values beyond those which can be tolerated by metallic alloys. The most promising ceramics being investigated in this connection are Si3N4 and SiC. A description is presented of a study which had the objective to produce dense Si3N4. The two most common methods of consolidating Si3N4 currently being used include hot pressing and reaction sintering. The feasibility was explored of producing a sound, dense Si3N4 body without additives by means of conventional gas hot isostatic pressing techniques and an uncommon hydraulic hot isostatic pressing technique. It was found that Si3N4 can be densified without additions to a density which exceeds 95% of the theoretical value

  3. Infrared imaging spectrometry by the use of bundled chalcogenide glass fibers and a PtSi CCD camera

    NASA Astrophysics Data System (ADS)

    Saito, Mitsunori; Kikuchi, Katsuhiro; Tanaka, Chinari; Sone, Hiroshi; Morimoto, Shozo; Yamashita, Toshiharu T.; Nishii, Junji

    1999-10-01

    A coherent fiber bundle for infrared image transmission was prepared by arranging 8400 chalcogenide (AsS) glass fibers. The fiber bundle, 1 m in length, is transmissive in the infrared spectral region of 1 - 6 micrometer. A remote spectroscopic imaging system was constructed with the fiber bundle and an infrared PtSi CCD camera. The system was used for the real-time observation (frame time: 1/60 s) of gas distribution. Infrared light from a SiC heater was delivered to a gas cell through a chalcogenide fiber, and transmitted light was observed through the fiber bundle. A band-pass filter was used for the selection of gas species. A He-Ne laser of 3.4 micrometer wavelength was also used for the observation of hydrocarbon gases. Gases bursting from a nozzle were observed successfully by a remote imaging system.

  4. Defects in Ceramic Matrix Composites and Their Impact on Elastic Properties (Postprint)

    DTIC Science & Technology

    2013-07-01

    numerically modeled. The composite under investigation was a 10 layer T300 carbon/ SiC composite in which carbon fabric was impregnated using a polymer ...fraction. (3) Melt Infiltrated in situ BN SiC / SiC composite comprising a stochiometric SiC (Sylramic™) fiber, with an in situ boron nitride treatment...SiNC composite is listed in Table 4. Polymer derived SiC and SiNC matrix material do not ex- hibit a major change in their elastic properties at

  5. Construction Progress of the S-IC Test Stand Complex Bunker House

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC stand, additional related facilities were built during this time frame. Built to the east of the S-IC stand, the block house served as the control room. To the south of the blockhouse was a newly constructed pump house used for delivering water to the S-IC stand during testing. North of the massive test stand, the F-1 Engine test stand was built for testing a single F-1 engine. Just southeast of the S-IC stand a concrete bunker house was constructed. The bunker housed an emergency crew clad in fire proof gear, who were close at hand should any emergencies arise during testing. This photo of the completed bunker house was taken on May 7, 1963.

  6. Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Komae, Yasuaki; Yasui, Kanji; Suemitsu, Maki; Endoh, Tetsuo; Ito, Takashi; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2009-07-01

    Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

  7. Atomically Flat Surfaces Developed for Improved Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony

    2001-01-01

    New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

  8. SiC As An Energetic Particle Detector

    NASA Technical Reports Server (NTRS)

    Yan, F.; Hicks, J.; Shappirio, Mark D.; Brown, S.; Smith, C.; Xin, X.; Zhao, J. H.

    2005-01-01

    Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

  9. Surgical Informed Consent Process in Neurosurgery

    PubMed Central

    Park, Jaechan; Park, Hyojin

    2017-01-01

    The doctrine of informed consent, as opposed to medical paternalism, is intended to facilitate patient autonomy by allowing patient participation in the medical decision-making process. However, regrettably, the surgical informed consent (SIC) process is invariably underestimated and reduced to a documentary procedure to protect physicians from legal liability. Moreover, residents are rarely trained in the clinical and communicative skills required for the SIC process. Accordingly, to increase professional awareness of the SIC process, a brief history and introduction to the current elements of SIC, the obstacles to patient autonomy and SIC, benefits and drawbacks of SIC, planning of an optimal SIC process, and its application to cases of an unruptured intracranial aneurysm are all presented. Optimal informed consent process can provide patients with a good comprehension of their disease and treatment, augmented autonomy, a strong therapeutic alliance with their doctors, and psychological defenses for coping with stressful surgical circumstances. PMID:28689386

  10. Actuator operated microvalves

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2008-01-01

    An actuator operated microvalve and the method of making same is disclosed and claimed. The microvalve comprises a SiC housing which includes a first lower portion and a second upper portion. The lower portion of the SiC housing includes a passageway therethrough, a microvalve seat, and a moveable SiC diaphragm. The SiC diaphragm includes a centrally located boss and radially extending corrugations which may be sinusoidally shaped. The boss of the SiC diaphragm moves and modulates in a range of positions between a closed position wherein the boss interengages said microvalve seat prohibiting communication of fluid through the passageway and a fully open position when the boss is spaced apart from the seat at its maximum permitting communication of fluid through said passageway. The actuator includes a SiC top plate affixed to the boss of the diaphragm and a first electrode and the second upper portion of the SiC housing further includes a second electrode.

  11. Nanostructured catalyst supports

    DOEpatents

    Zhu, Yimin; Goldman, Jay L.; Qian, Baixin; Stefan, Ionel C.

    2012-10-02

    The present invention relates to SiC nanostructures, including SiC nanopowder, SiC nanowires, and composites of SiC nanopowder and nanowires, which can be used as catalyst supports in membrane electrode assemblies and in fuel cells. The present invention also relates to composite catalyst supports comprising nanopowder and one or more inorganic nanowires for a membrane electrode assembly.

  12. Cheyenne-Laramie County Economic Development Strategy

    DTIC Science & Technology

    1986-06-01

    Industry SIC 2879 4. Cosmetics and Toilet Preparations Industry SIC 2844 5. Electronic Connectors Industry SIC 3678 6. Mineral Wool Industry SIC 3296...five primary target-industries selected are: Soap and Other Detergents, Toilet Preparations, Agricultural Chemicals, Mineral Wool , and Electronic...Cheyenne include: -- soap and other detergents -- toilet preparation -- agricultural chemicals -- mineral wool -- electronic connectors * downtown

  13. Thermomechanical Performance of C and SiC Multilayer, Fiber-Reinforced, CVI SiC Matrix Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Singh, Mrityunjay

    2004-01-01

    Hybrid fiber approaches have been attempted in the past to alloy desirable properties of different fiber-types for mechanical properties, thermal stress management, and oxidation resistance. Such an approach has potential for the CrSiC and SiCrSiC composite systems. SiC matrix composites with different stacking sequences of woven C fiber (T300) layers and woven Sic fiber (Hi-NicalonTM) layers were fabricated using the standard CVI process. Delamination occurred to some extent due to thermal mismatch for all of the composites. However, for the composites with a more uniform stacking sequence, minimal delamination occurred, enabling tensile properties to be determined at room temperature and elevated temperatures (stress-rupture in air). Composites were seal-coated with a CVI SiC layer as well as a proprietary C-B-Si (CBS) layer. Definite improvement in rupture behavior was observed in air for composites with increasing SiC fiber content and a CBS layer. The results will be compared to standard C fiber reinforced CVI SiC matrix and Hi-Nicalon reinforced CVI SiC matrix composites.

  14. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    NASA Astrophysics Data System (ADS)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  15. Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

    PubMed Central

    Fu, Zhiqiang; Wang, Chengbiao

    2014-01-01

    Ultrafine tungsten carbide-nickel (WC-Ni) cemented carbides with varied fractions of silicon carbide (SiC) nanowhisker (0–3.75 wt.%) were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC) and tantalum carbide (TaC) as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS) Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker. PMID:25003143

  16. Grain-boundary type and distribution in silicon carbide coatings and wafers

    NASA Astrophysics Data System (ADS)

    Cancino-Trejo, Felix; López-Honorato, Eddie; Walker, Ross C.; Ferrer, Romelia Salomon

    2018-03-01

    Silicon carbide is the main diffusion barrier against metallic fission products in TRISO (tristructural isotropic) coated fuel particles. The explanation of the accelerated diffusion of silver through SiC has remained a challenge for more than four decades. Although, it is now well accepted that silver diffuse through SiC by grain boundary diffusion, little is known about the characteristics of the grain boundaries in SiC and how these change depending on the type of sample. In this work five different types (coatings and wafers) of SiC produced by chemical vapor deposition were characterized by electron backscatter diffraction (EBSD). The SiC in TRISO particles had a higher concentration of high angle grain boundaries (aprox. 70%) compared to SiC wafers, which ranged between 30 and 60%. Similarly, SiC wafers had a higher concentration of low angle grain boundaries ranging between 15 and 30%, whereas TRISO particles only reached values of around 7%. The same trend remained when comparing the content of coincidence site lattice (CSL) boundaries, since SiC wafers showed a concentration of more than 30%, whilst TRISO particles had contents of around 20%. In all samples the largest fractions of CSL boundaries (3 ≤ Σ ≤ 17) were the Σ3 boundaries. We show that there are important differences between the SiC in TRISO particles and SiC wafers which could explain some of the differences observed in diffusion experiments in the literature.

  17. III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium Held April 8-12 1996, San Francisco, California, U.S.A. Volume 423.

    DTIC Science & Technology

    1996-12-01

    gallium, nitrogen and gallium nitride structures. Thus it can be shown to be transferable and efficient for predictive molecular -dynamic simulations on...potentials and forces for the molecular dynamics simulations are derived by means of a density-functional based nonorthogonal tight-binding (DF-TB) scheme...LDA). Molecular -dynamics simulations for determining the different reconstructions of the SiC surface use the slab method (two-dimensional periodic

  18. PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

    NASA Technical Reports Server (NTRS)

    Scardelletti, Maximilian C.; Stanton, John W.; Ponchak, George E.; Jordan, Jennifer L.; Zorman, Christian A.

    2010-01-01

    This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

  19. Highly flexible, nonflammable and free-standing SiC nanowire paper

    NASA Astrophysics Data System (ADS)

    Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

    2015-03-01

    Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00776c

  20. AIN-Based Packaging for SiC High-Temperature Electronics

    NASA Technical Reports Server (NTRS)

    Savrun, Ender

    2004-01-01

    Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

  1. Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

    NASA Technical Reports Server (NTRS)

    Juhasz, Albert J.; Tew, Roy C.; Schwarze, Gene E.

    1998-01-01

    The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

  2. Irradiation performance of AGR-1 high temperature reactor fuel

    DOE PAGES

    Demkowicz, Paul A.; Hunn, John D.; Ploger, Scott A.; ...

    2015-10-23

    The AGR-1 experiment contained 72 low-enriched uranium oxide/uranium carbide TRISO coated particle fuel compacts in six capsules irradiated to burnups of 11.2 to 19.6% FIMA, with zero TRISO coating failures detected during the irradiation. The irradiation performance of the fuel including the extent of fission product release and the evolution of kernel and coating microstructures was evaluated based on detailed examination of the irradiation capsules, the fuel compacts, and individual particles. Fractional release of 110mAg from the fuel compacts was often significant, with capsule-average values ranging from 0.01 to 0.38. Analysis of silver release from individual compacts indicated that itmore » was primarily dependent on fuel temperature history. Europium and strontium were released in small amounts through intact coatings, but were found to be significantly retained in the outer pyrocarbon and compact matrix. The capsule-average fractional release from the compacts was 1 × 10 –4 to 5 × 10 –4 for 154Eu and 8 × 10 –7 to 3 × 10 –5 for 90Sr. The average 134Cs fractional release from compacts was <3 × 10 –6 when all particles maintained intact SiC. An estimated four particles out of 2.98 × 10 5 in the experiment experienced partial cesium release due to SiC failure during the irradiation, driving 134Cs fractional release in two capsules to approximately 10 –5. Identification and characterization of these particles has provided unprecedented insight into the nature and causes of SiC coating failure in high-quality TRISO fuel. In general, changes in coating morphology were found to be dominated by the behavior of the buffer and inner pyrolytic carbon (IPyC), and infrequently observed SiC layer damage was usually related to cracks in the IPyC. Palladium attack of the SiC layer was relatively minor, except for the particles that released cesium during irradiation, where SiC corrosion was found adjacent to IPyC cracks. In conclusion, palladium, silver, and uranium were found in the SiC layer of irradiated particles, and characterization of these elements within the SiC microstructure is the subject of ongoing focused study.« less

  3. Silicon carbide as an oxidation-resistant high-temperature material. 1: Oxidation and heat corrosion behavior

    NASA Technical Reports Server (NTRS)

    Schlichting, J.

    1981-01-01

    The oxidation and corrosion behavior of SiC (in the form of a SiC powder) and hot-pressed and reaction-bound material were studied. The excellent stability of SiC in an oxidizing atmosphere is due to the development of protective SiO2 coatings. Any changes in these protective layers (e.g., due to impurities, reaction with corrosive media, high porosity of SiC, etc.) lead in most cases to increased rates of oxidation and thus restrict the field of SiC application.

  4. Around Marshall

    NASA Image and Video Library

    1963-01-14

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC test stand, related facilities were constructed during this time frame. Built just north of the massive S-IC test stand was the F-1 Engine test stand. The F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base, and was designed to assist in the development of the F-1 Engine. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This photo, taken January 14, 1963 depicts the F-1 test stand site with hoses pumping excess water from the site.

  5. Fabrication and Characterization of Diffusion Bonds for Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Halbig, Michael; Singh, Mrityunjay; Martin, Richard E.; Cosgriff, Laura M.

    2007-01-01

    Diffusion bonds of silicon carbide (SiC) were fabricated using several different types of titanium (Ti) based interlayers between the SiC substrates. The interlayers were an alloyed Ti foil, a pure Ti foil, and a physically vapor deposited (PVD) Ti coating. Microscopy was conducted to evaluate the cross-sections of the resulting bonds. Microprobe analysis identified reaction formed phases in the diffusion bonded region. Uniform and well adhered bonds were formed between the SiC substrates. In the case where the alloyed Ti foil or a thick Ti coating (i.e. 20 micron) was used as the interlayer, microcracks and several phases were present in the diffusion bonds. When a thinner interlayer was used (i.e. 10 micron PVD Ti), no microcracks were observed and only two reaction formed phases were present. The two phases were preferred and fully reacted phases that did not introduce thermal stresses or microcracks during the cool-down stage after processing. Diffusion bonded samples were evaluated with the non-destructive evaluation (NDE) methods of pulsed thermography and immersion ultrasonic testing. Joined SiC substrates that were fully bonded and that had simulated bond flaws in the interlayer were also evaluated using immersion ultrasound. Pull testing was conducted on the bonds to determine the tensile strength. To demonstrate the joining approach for a complex multilayered component for a low NOx injector application, the diffusion bonding approach was used to join three 4" diameter SiC discs that contained complex fuel and air flow channels.

  6. A silicon carbide nanowire field effect transistor for DNA detection

    NASA Astrophysics Data System (ADS)

    Fradetal, L.; Bano, E.; Attolini, G.; Rossi, F.; Stambouli, V.

    2016-06-01

    This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

  7. New trend of radiation application to polymer modification — irradiation in oxygen free atmosphere and at elevated temperature

    NASA Astrophysics Data System (ADS)

    Seguchi, Tadao

    2000-03-01

    Polycarbosilane (PCS) fiber as a precursor for ceramic fiber of silicon carbide was cured by electron beam (EB) irradiation under oxygen free atmosphere. Oxygen content in the cured PCS fiber was scarce and the obtained silicon carbide (SiC) fiber with low oxygen content showed high heat resistance up to 1973 K and tensile strength of 3 GPa. Also, the EB cured PCS fiber with very low oxygen content could be converted to silicon nitride (Si 3N 4) fiber by the pyrolysis in NH 3 gas atmosphere, which was the new processing to produce Si 3N 4 fiber. The process of SiC fiber synthesis was developed to the commercial plant. The other application was the crosslinking of polytetrafluoroethylene (PTFE). PTFE, which had been recognized to be a typical chain scission polymer, could be induced to crosslinking by irradiation at the molten state in oxygen free atmosphere. The physical properties such as crystallinity, mechanical properties, etc. changed much by crosslinking, and the radiation resistance was much improved.

  8. Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

    NASA Technical Reports Server (NTRS)

    DeAnna, Russell G.

    1998-01-01

    A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

  9. Silver (Ag) Transport Mechanisms in TRISO Coated Particles: A Critical Review

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    IJ van Rooyen; ML Dunzik-Gougar; PM van Rooyen

    2014-05-01

    Transport of 110mAg in the intact SiC layer of TRISO coated particles has been studied for approximately 30 years without arriving at a satisfactory explanation of the transport mechanism. In this paper the possible mechanisms postulated in previous experimental studies, both in-reactor and out-of reactor research environment studies are critically reviewed and of particular interest are relevance to very high temperature gas reactor operating and accident conditions. Among the factors thought to influence Ag transport are grain boundary stoichiometry, SiC grain size and shape, the presence of free silicon, nano-cracks, thermal decomposition, palladium attack, transmutation products, layer thinning and coatedmore » particle shape. Additionally new insight to nature and location of fission products has been gained via recent post irradiation electron microscopy examination of TRISO coated particles from the DOE’s fuel development program. The combined effect of critical review and new analyses indicates a direction for investigating possible the Ag transport mechanism including the confidence level with which these mechanisms may be experimentally verified.« less

  10. Silver (Ag) Transport Mechanisms in TRISO coated particles: A Critical Review

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    I J van Rooyen; J H Neethling; J A A Engelbrecht

    2012-10-01

    Transport of 110mAg in the intact SiC layer of TRISO coated particles has been studied for approximately 30 years without arriving at a satisfactory explanation of the transport mechanism. In this paper the possible mechanisms postulated in previous experimental studies, both in-reactor and out-of reactor research environment studies are critically reviewed and of particular interest are relevance to very high temperature gas reactor operating and accident conditions. Among the factors thought to influence Ag transport are grain boundary stoichiometry, SiC grain size and shape, the presence of free silicon, nano-cracks, thermal decomposition, palladium attack, transmutation products, layer thinning and coatedmore » particle shape. Additionally new insight to nature and location of fission products has been gained via recent post irradiation electron microscopy examination of TRISO coated particles from the DOE’s fuel development program. The combined effect of critical review and new analyses indicates a direction for investigating possible the Ag transport mechanism including the confidence level with which these mechanisms may be experimentally verified.« less

  11. Nanoindentation investigation of heavy ion irradiated Ti 3(Si,Al)C 2

    NASA Astrophysics Data System (ADS)

    Liu, X. M.; Le Flem, M.; Béchade, J. L.; Monnet, I.

    2010-06-01

    Because of good damage tolerance, thermal stability and interesting mechanical properties, Ti 3SiC 2, belonging to M n+1AX n phases, has been considered as a potential candidate material for applications in the future Gas Fast nuclear Reactors (GFR) such as components of fuel cladding working between 500 °C and 800 °C. However, the outstanding mechanical properties of Ti 3SiC 2 related to a layered microstructure could be impacted by irradiation. In this work, high energy Kr and Xe ion irradiated Ti 3Si 0.95Al 0.05C 2 and Ti 3Si 0.90Al 0.10C 2 samples, provided by IMR Shenyang, Chinese Academy of Science, were characterized by nanoindentation technique. After irradiation at room temperature, an increase in hardness with irradiation dose was highlighted. Nevertheless, some damage tolerance remained because of preservation of the typical MAX layered structure. Irradiations at 300 °C and 500 °C lead to less significant increase suggesting irradiation defect annealing. A complete recovery of the properties at 800 °C seems to be obtained.

  12. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gerczak, Tyler J.; Smith, Kurt R.; Petrie, Christian M.

    Tristructural-isotropic (TRISO)–coated particle fuel is a promising advanced fuel concept consisting of a spherical fuel kernel made of uranium oxide and uranium carbide, surrounded by a porous carbonaceous buffer layer and successive layers of dense inner pyrolytic carbon (IPyC), silicon carbide (SiC) deposited by chemical vapor , and dense outer pyrolytic carbon (OPyC). This fuel concept is being considered for advanced reactor applications such as high temperature gas-cooled reactors (HTGRs) and molten salt reactors (MSRs), as well as for accident-tolerant fuel for light water reactors (LWRs). Development and implementation of TRISO fuel for these reactor concepts support the US Departmentmore » of Energy (DOE) Office of Nuclear Energy mission to promote safe, reliable nuclear energy that is sustainable and environmentally friendly. During operation, the SiC layer serves as the primary barrier to metallic fission products and actinides not retained in the kernel. It has been observed that certain fission products are released from TRISO fuel during operation, notably, Ag, Eu, and Sr [1]. Release of these radioisotopes causes safety and maintenance concerns.« less

  13. The synthesis of nanostructured SiC from waste plastics and silicon powder

    NASA Astrophysics Data System (ADS)

    Ju, Zhicheng; Xu, Liqiang; Pang, Qiaolian; Xing, Zheng; Ma, Xiaojian; Qian, Yitai

    2009-09-01

    Waste plastics constitute a growing environmental problem. Therefore, the treatment of waste plastics should be considered. Here we synthesize 3C-SiC nanomaterials coexisting with amorphous graphite particles utilizing waste plastics and Si powder at 350-500 °C in a stainless steel autoclave. 3C-SiC could be finally obtained after refluxing with aqueous HClO4 (70 wt%) at 180 °C. X-ray powder diffraction patterns indicate that the product is 3C-SiC with the calculated lattice constant a = 4.36 Å. Transmission electron microscopy (TEM) images show that the SiC samples presented two morphologies: hexagonal platelets prepared by the waste detergent bottles or beverage bottles and nanowires prepared by waste plastic bags respectively. The corresponding selected area electron diffraction (SAED) pattern indicates that either the entire hexagonal platelet or the nanowire is single crystalline. High-resolution TEM shows the planar surfaces of the SiC platelet correspond to {111} planes; the lateral surfaces are {110} planes and the preferential growth direction of the nanowires is along [111]. The output of SiC was ~39% based on the amount of Si powder.

  14. High temperature compounds for turbine vanes. [of SiC, Si3N4, and Si composites

    NASA Technical Reports Server (NTRS)

    Rhodes, W. H.; Cannon, R. M., Jr.

    1974-01-01

    Fabrication and microstructure control studies were conducted on SiC, Si3N and composites based on Si3N. Charpy mode impact testing to 2400 F established that Si3N4/Mo composites have excellent potential. Attempts to fabricate composites of Si3N4 with superalloys, both by hot pressing and infiltration were largely unsuccessful in comparison to using Mo, Re, and Ta which are less reactive. Modest improvements in impact strength were realized for monolithic Si3N4; however, SiC strengths increased by a factor of six and now equal values achieved for Si3N4. Correlations of impact strength with material properties are discussed. Reduced MgO densification aid additions to Si3N4 were found to decrease densification kinetics, increase final porosity, decrease room temperature bend strength, increase high temperature bend strength, and decrease bend stress rupture properties. The decrease in bend strength at high temperature for fine grain size SiC suggested that a slightly larger grain size material with a nearly constant strength-temperature relation may prove desirable in the creep and stress rupture mode.

  15. SiC/SiC Cladding Materials Properties Handbook

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Snead, Mary A.; Katoh, Yutai; Koyanagi, Takaaki

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormalmore » operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.« less

  16. A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    DOE PAGES

    Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

    2014-04-30

    Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

  17. Chemical Stability of the Fiber Coating/Matrix Interface in Silicon-Based Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Lee, Kang N.; Jacobson, Nathan S.

    1995-01-01

    Carbon and boron nitride are used as fiber coatings in silicon-based composites. In order to assess the long-term stability of these materials, reactions of carbon/Si3N4 and BN/SiC were studied at high temperatures with Knudsen effusion, coupon tests, and microstructural examination. In the carbon/Si3N4 system, carbon reacted with Si3N4 to form gaseous N2 and SiC. The formation of SiC limited further reaction by physically separating the carbon and Si3N4. Consequently, the development of high p(N2) at the interface, predicted from thermochemical calculations, did not occur, thus limiting the potential deleterious effects of the reaction on the composite. Strong indications of a reaction between BN and SiC were shown by TEM and SIMS analysis of the BN/SiC interface. In long-term exposures, this reaction can lead to a depletion of a BN coating and/or an unfavorable change of the interfacial properties, limiting the beneficial effects of the coating.

  18. Fast Turn-Off Times Observed in Experimental 4H SiC Thyristors

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    2006-01-01

    Room temperature measurements of the turn-off time (t(sub q)) are reported for several packaged, npnp developmental power thyristors based on 4H-type SiC and rated 400 V, 2 A. Turn-off is effected by a 50 V pulse of applied reverse voltage, from a state of a steady 1 A forward current. Plots of t(sub q) against the ramp rate (dV(sub AK)/dt) of reapplied forward voltage are presented for preset values of limiting anode-to-cathode voltage (V(sub AK,max)). The lowest t(sub q) measured was about 180 ns. A rapid rise of these t(sub q) curves was observed for values of V(sub AK,max) that are only about a fifth of the rated voltage, whereas comparative t(sub q) plots for a commercial, fast turn-off, Si-based thyristor at a proportionately reduced V(sub AK,max) showed no such behavior. Hence these SiC thyristors may have problems arising from material defects or surface passivation. The influence the R-C-D gate bypass circuit that was used is briefly discussed.

  19. Book Review: Book review

    NASA Astrophysics Data System (ADS)

    Wang, Christina Yan

    2017-02-01

    The world class Ni-Cu-PGE sulfide deposits associated with the Sudbury Igneous Complex (SIC) are quite unique on earth in the sense that the energy source and origin were triggered by a large meteorite impact event. The ore deposits in the SIC make up one of the largest Ni-Cu-PGE sulfide deposit camps in the world and have now been mined for over 100 years. This is the first complete reference book that focuses entirely on the SIC and covers the fields of economic geology, petrology, geochemistry and geophysics. The purpose of this book is to explore the linkage between sulfide and silicate magmas generated by the 1.85 Ga Sudbury impact event and to unite an understanding of the process of crustal melt sheet evolution with the formation of the magmatic sulfide mineralization. The author, Peter Lightfoot, has been based in Sudbury for 25 years. As a top scientist on magmatic Ni-Cu-PGE sulfide deposits and a Chief Geologist with the Brownfield Exploration group at Vale Base Metals, Peter has been positioned to develop and assemble the ideas presented in this book, which are perfectly balanced between industry and academia.

  20. SiC Protective Coating for Photovoltaic Retinal Prostheses

    PubMed Central

    Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

    2016-01-01

    Objective To evaluate PECVD SiC as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach Retinal prostheses were implanted in rats subretinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiNx and thermal SiO2 were measured in accelerated soaking tests in saline at 87°C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results At 87°C SiNx dissolved at 18.3±0.3nm/day, while SiO2 grown at high temperature (1000°C) dissolved at 1.04±0.08A/day. SiC films demonstrated the best stability, with no quantifiable change after 112 days. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance SiC coatings demonstrating no erosion in accelerated aging test for 112 days at 87°C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4-month follow-up in vivo. The optimal thickness of SiC layers is about 560nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects. PMID:27323882

  1. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    PubMed

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  2. Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

    NASA Technical Reports Server (NTRS)

    Mitchell, Sharanda L.

    1996-01-01

    Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

  3. Bulk Thermoelectric Materials Reinforced with SiC Whiskers

    NASA Astrophysics Data System (ADS)

    Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

    2014-06-01

    SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

  4. Packaging Technologies for 500C SiC Electronics and Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  5. In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

    NASA Astrophysics Data System (ADS)

    Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

    2008-02-01

    We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

  6. Characterization of a Complement-Binding Protein, DRS, from Strains of Streptococcus pyogenes Containing the emm12 and emm55 Genes

    PubMed Central

    Binks, Michael; Sriprakash, K. S.

    2004-01-01

    An extracellular protein of Streptococcus pyogenes, streptococcal inhibitor of complement (SIC), and its variant, called DRS (distantly related to SIC), are expressed by some S. pyogenes strains. SIC from type 1 (M1) isolates of S. pyogenes interferes with complement-mediated cell lysis, reportedly via its interaction with complement proteins. In this study we demonstrate that S. pyogenes strains carrying emm12 and emm55 (the genes for the M12 and M55 proteins, respectively) express and secrete DRS. This protein, like SIC, binds to the C6 and C7 complement proteins, and competition enzyme-linked immunosorbent assay experiments demonstrate that DRS competes with SIC for C6 and C7 binding. Similarly, SIC competes with DRS for binding to the complement proteins. Despite this, the recombinant DRS preparation showed no significant effect on complement function, as determined by lysis of sensitized sheep erythrocytes. Furthermore, the presence of DRS is not inhibitory to SIC activity. PMID:15213143

  7. Characterization of a complement-binding protein, DRS, from strains of Streptococcus pyogenes containing the emm12 and emm55 genes.

    PubMed

    Binks, Michael; Sriprakash, K S

    2004-07-01

    An extracellular protein of Streptococcus pyogenes, streptococcal inhibitor of complement (SIC), and its variant, called DRS (distantly related to SIC), are expressed by some S. pyogenes strains. SIC from type 1 (M1) isolates of S. pyogenes interferes with complement-mediated cell lysis, reportedly via its interaction with complement proteins. In this study we demonstrate that S. pyogenes strains carrying emm12 and emm55 (the genes for the M12 and M55 proteins, respectively) express and secrete DRS. This protein, like SIC, binds to the C6 and C7 complement proteins, and competition enzyme-linked immunosorbent assay experiments demonstrate that DRS competes with SIC for C6 and C7 binding. Similarly, SIC competes with DRS for binding to the complement proteins. Despite this, the recombinant DRS preparation showed no significant effect on complement function, as determined by lysis of sensitized sheep erythrocytes. Furthermore, the presence of DRS is not inhibitory to SIC activity.

  8. The improvement of wave-absorbing ability of silicon carbide fibers by depositing boron nitride coating

    NASA Astrophysics Data System (ADS)

    Ye, Fang; Zhang, Litong; Yin, Xiaowei; Liu, Yongsheng; Cheng, Laifei

    2013-04-01

    This work investigated electromagnetic wave (EMW) absorption and mechanical properties of silicon carbide (SiC) fibers with and without boron nitride (BN) coating by chemical vapor infiltration (CVI). The dielectric property and EM shielding effectiveness of SiC fiber bundles before and after being coated by BN were measured by wave guide method. The EM reflection coefficient of SiC fiber laminates with and without BN coating was determined by model calculation and NRL-arc method, respectively. Tensile properties of SiC fiber bundles with and without BN coating were tested at room temperature. Results show that SiC fibers with BN coating had a great improvement of EMW absorbing property because the composites achieved the impedance matching. BN with the low permittivity and dielectric loss contributed to the enhancive introduction and reduced reflection of EMW. The tensile strength and Weibull modulus of SiC fiber bundles coated by BN increased owing to the decrease of defects in SiC fibers and the protection of coating during loading.

  9. Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

    1987-01-01

    An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

  10. Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

    1989-01-01

    An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

  11. Amorphization resistance of nano-engineered SiC under heavy ion irradiation

    NASA Astrophysics Data System (ADS)

    Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

    2016-09-01

    Silicon carbide (SiC) with a high-density of planar defects (hereafter, 'nano-engineered SiC') and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. It was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

  12. Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

    2004-01-01

    Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

  13. Research on Antiphonic Characteristic of AlMg10-SiC Ultralight Composite Materials

    NASA Astrophysics Data System (ADS)

    Rusu, O.; Rusu, I.

    2018-06-01

    The paper presents the results on the absorption sound testing of an ultralight cellular composite material AlMg10-SiC, obtained by sputtering method. We have chosen this type of material because its microstructure generally comprises open cells (and relatively few semi-open cells), evenly distributed in the material, a structure that, at least theoretically, has a favorable behavior in relation to sound damping. The tests were performed on three types of samples, namely P11 – AlMg10 – 5%SiC, P12 – AlMg10 – 10%SiC şi P13 – AlMg10 – 15%SiC. The 15% SiC (P13) cellular material sample has the best sound-absorbing characteristics and the highest practical absorption degree.

  14. Microstructural optimization of solid-state sintered silicon carbide

    NASA Astrophysics Data System (ADS)

    Vargas-Gonzalez, Lionel R.

    Silicon carbide armor, manufactured through solid-state sintering, liquid-phase sintering, and hot-pressing, is being used by the United States Armed Forces for personal and vehicle protection. There is a lack of consensus, however, on which process results in the best-performing ballistic armor. Previous studies have shown that hot-pressed ceramics processed with secondary oxide and/or rare earth oxides, which exhibit high fracture toughness, perform well in handling and under ballistic impact. This high toughness is due to the intergranular nature of the fracture, creating a tortuous path for cracks and facilitating crack deflection and bridging. However, it has also been shown that higher-hardness sintered SiC materials might perform similarly or better to hot-pressed armor, in spite of the large fracture toughness deficit, if the microstructure (density, grain size, purity) of these materials are improved. In this work, the development of theoretically-dense, clean grain boundary, high hardness solid-state sintered silicon carbide (SiC) armor was pursued. Boron carbide and graphite (added as phenolic resin to ensure the carbon is finely dispersed throughout the microstructure) were used as the sintering aids. SiC batches between 0.25--4.00 wt.% carbon were mixed and spray dried. Cylindrical pellets were pressed at 13.7 MPa, cold-isostatically pressed (CIP) at 344 MPa, sintered under varying sintering soaking temperatures and heating rates, and varying post hot-isostatic pressing (HIP) parameters. Carbon additive amounts between 2.0--2.5 wt.% (based on the resin source), a 0.36 wt.% B4C addition, and a 2050°C sintering soak yielded parts with high sintering densities (˜95.5--96.5%) and a fine, equiaxed microstructure (d50 = 2.525 mum). A slow ramp rate (10°C/min) prevented any occurrence of abnormal grain growth. Post-HIPing at 1900°C removed the remaining closed porosity to yield a theoretically-dense part (3.175 g/cm3, according to rule of mixtures). These parts exhibited higher density and finer microstructure than a commercially-available sintered SiC from Saint-Gobain (Hexoloy Enhanced, 3.153 g/cm3 and d50 = 4.837 mum). Due to the optimized microstructure, Verco SiC parts exhibited the highest Vickers (2628.30 +/- 44.13 kg/mm 2) and Knoop (2098.50 +/- 24.8 kg/mm2) hardness values of any SiC ceramic, and values equal to those of the "gold standard" hot-pressed boron carbide (PAD-B4C). While the fracture toughness of hot-pressed SiC materials (˜4.5 MPa m ) are almost double that of Verco SiC (2.4 MPa m ), Verco SiC is a better performing ballistic product, implying that the higher hardness of the theoretically-dense, clean-grain boundary, fine-grained SiC is the defining mechanical property for optimization of ballistic behavior.

  15. Corrosion pitting of SiC by molten salts

    NASA Technical Reports Server (NTRS)

    Jacobson, N. S.; Smialek, J. L.

    1986-01-01

    The corrosion of SiC by thin films of Na2CO3 and Na2SO4 at 1000 C is characterized by a severe pitting attack of the SiC substrate. A range of different Si and SiC substrates were examined to isolate the factors critical to pitting. Two types of pitting attack are identified: attack at structural discontinuities and a crater-like attack. The crater-like pits are correlated with bubble formation during oxidation of the SiC. It appears that bubbles create unprotected regions, which are susceptible to enhanced attack and, hence, pit formation.

  16. Future sea ice conditions in Western Hudson Bay and consequences for polar bears in the 21st century.

    PubMed

    Castro de la Guardia, Laura; Derocher, Andrew E; Myers, Paul G; Terwisscha van Scheltinga, Arjen D; Lunn, Nick J

    2013-09-01

    The primary habitat of polar bears is sea ice, but in Western Hudson Bay (WH), the seasonal ice cycle forces polar bears ashore each summer. Survival of bears on land in WH is correlated with breakup and the ice-free season length, and studies suggest that exceeding thresholds in these variables will lead to large declines in the WH population. To estimate when anthropogenic warming may have progressed sufficiently to threaten the persistence of polar bears in WH, we predict changes in the ice cycle and the sea ice concentration (SIC) in spring (the primary feeding period of polar bears) with a high-resolution sea ice-ocean model and warming forced with 21st century IPCC greenhouse gas (GHG) emission scenarios: B1 (low), A1B (medium), and A2 (high). We define critical years for polar bears based on proposed thresholds in breakup and ice-free season and we assess when ice-cycle conditions cross these thresholds. In the three scenarios, critical years occur more commonly after 2050. From 2001 to 2050, 2 critical years occur under B1 and A2, and 4 under A1B; from 2051 to 2100, 8 critical years occur under B1, 35 under A1B and 41 under A2. Spring SIC in WH is high (>90%) in all three scenarios between 2001 and 2050, but declines rapidly after 2050 in A1B and A2. From 2090 to 2100, the mean spring SIC is 84 (±7)% in B1, 56 (±26)% in A1B and 20 (±13)% in A2. Our predictions suggest that the habitat of polar bears in WH will deteriorate in the 21st century. Ice predictions in A1B and A2 suggest that the polar bear population may struggle to persist after ca. 2050. Predictions under B1 suggest that reducing GHG emissions could allow polar bears to persist in WH throughout the 21st century. © 2013 John Wiley & Sons Ltd.

  17. Smart Sensor Systems for Aerospace Applications: From Sensor Development to Application Testing

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Xu, J. C.; Dungan, L. K.; Ward, B. J.; Rowe, S.; Williams, J.; Makel, D. B.; Liu, C. C.; Chang, C. W.

    2008-01-01

    The application of Smart Sensor Systems for aerospace applications is a multidisciplinary process consisting of sensor element development, element integration into Smart Sensor hardware, and testing of the resulting sensor systems in application environments. This paper provides a cross-section of these activities for multiple aerospace applications illustrating the technology challenges involved. The development and application testing topics discussed are: 1) The broadening of sensitivity and operational range of silicon carbide (SiC) Schottky gas sensor elements; 2) Integration of fire detection sensor technology into a "Lick and Stick" Smart Sensor hardware platform for Crew Exploration Vehicle applications; 3) Extended testing for zirconia based oxygen sensors in the basic "Lick and Stick" platform for environmental monitoring applications. It is concluded that that both core sensor platform technology and a basic hardware platform can enhance the viability of implementing smart sensor systems in aerospace applications.

  18. n/a

    NASA Image and Video Library

    1963-01-15

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built directly east of the test stand was the Block House, which served as the control center for the test stand. The two were connected by a narrow access tunnel which housed the cables for the controls. The F-1 Engine test stand was built north of the massive S-IC test stand. The F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base, and was designed to assist in the development of the F-1 Engine. Capability is provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This aerial photograph, taken January 15, 1963, gives a close overall view of the newly developed test complex. Depicted in the forefront center is the S-IC test stand with towers prominent, the Block House is seen in the center just above the S-IC test stand, and the large hole to the left, located midway between the two is the F-1 test stand site.

  19. n/a

    NASA Image and Video Library

    1963-01-15

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built directly east of the test stand was the Block House, which served as the control center for the test stand. The two were connected by a narrow access tunnel which housed the cables for the controls. The F-1 Engine test stand was built north of the massive S-IC test stand. The F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base, and was designed to assist in the development of the F-1 Engine. Capability is provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This aerial photograph, taken January 15, 1963 gives an overall view of the construction progress of the newly developed test complex. The large white building located in the center is the Block House. Just below and to the right of it is the S-IC test stand. The large hole to the left of the S-IC stand is the F-1 test stand site.

  20. Effects of SiC nanoparticles orally administered in a rat model: Biodistribution, toxicity and elemental composition changes in feces and organs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lozano, Omar, E-mail: omar.lozanogarcia@fundp.ac.be; Research Centre for the Physics of Matter and Radiation; Laloy, Julie

    2012-10-15

    Background: Silicon carbide (SiC) presents noteworthy properties as a material such as high hardness, thermal stability, and photoluminescent properties as a nanocrystal. However, there are very few studies in regard to the toxicological potential of SiC NPs. Objectives: To study the toxicity and biodistribution of silicon carbide (SiC) nanoparticles in an in vivo rat model after acute (24 h) and subacute (28 days) oral administrations. The acute doses were 0.5, 5, 50, 300 and 600 mg·kg{sup −1}, while the subacute doses were 0.5 and 50 mg·kg{sup −1}. Results: SiC biodistribution and elemental composition of feces and organs (liver, kidneys, andmore » spleen) have been studied by Particle-Induced X-ray Emission (PIXE). SiC and other elements in feces excretion increased by the end of the subacute assessment. SiC did not accumulate in organs but some elemental composition modifications were observed after the acute assessment. Histopathological sections from organs (stomach, intestines, liver, and kidneys) indicate the absence of damage at all applied doses, in both assessments. A decrease in the concentration of urea in blood was found in the 50 mg·kg{sup −1} group from the subacute assessment. No alterations in the urine parameters (sodium, potassium, osmolarity) were found. Conclusion: This is the first study that assesses the toxicity, biodistribution, and composition changes in feces and organs of SiC nanoparticles in an in vivo rat model. SiC was excreted mostly in feces and low traces were retrieved in urine, indicating that SiC can cross the intestinal barrier. No sign of toxicity was however found after oral administration. -- Highlights: ► SiC nanoparticles were orally administered to rats in acute and subacute doses. ► SiC was found in low traces in urine. It is mostly excreted in feces within 5 days. ► SiC excretion rate, feces and organ elemental composition change with time. ► No morphological alteration were found on GI tract, liver, kidneys, or spleen. ► Urea increased in blood in the subacute assessment. No change in urine properties.« less

  1. A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ericson, N; Frank, S; Britton, C

    2014-02-01

    A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into anmore » isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.« less

  2. Normal incidence reflectance of ion beam deposited SiC films in the EUV

    NASA Technical Reports Server (NTRS)

    Keski-Kuha, Ritva A. M.; Osantowski, John F.; Herzig, Howard; Gum, Jeffrey S.; Toft, Albert R.

    1988-01-01

    Results are presented from an experimental investigation of the normal-incidence reflectance at 58.4, 92.0, and 121.6 nm wavelength of 30- and 80-nm-thick SiC films produced by ion-beam deposition on unheated 5 x 5-cm microscope slides. The films were deposited in the 2-m evaporator described by Bradford et al. (1969) with chamber base pressure 1 microtorr, operating pressure 40 microtorr, and a 50-62-mA 750-eV Ar ion beam; the reflectance measurements were obtained in the reflector-monochromator system described by Osantowski (1974). Reflectances of over 30 percent were found at 92 and 121.6 nm, almost equal to those of polished CVD films of SiC and degrading only slightly after aging for 4 months. It is suggested that ion-beam deposition may be the best low-temperature technique for coating EUV optics for space astronomy.

  3. High-efficient photo-electron transport channel in SiC constructed by depositing cocatalysts selectively on specific surface sites for visible-light H{sub 2} production

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Da; Peng, Yuan; Wang, Qi

    2016-04-18

    Control cocatalyst location on a metal-free semiconductor to promote surface charge transfer for decreasing the electron-hole recombination is crucial for enhancing solar energy conversion. Based on the findings that some metals have an affinity for bonding with the specific atoms of polar semiconductors at a heterostructure interface, we herein control Pt deposition selectively on the Si sites of a micro-SiC photocatalyst surface via in-situ photo-depositing. The Pt-Si bond forming on the interface constructs an excellent channel, which is responsible for accelerating photo-electron transfer from SiC to Pt and then reducing water under visible-light. The hydrogen production is enhanced by twomore » orders of magnitude higher than that of bare SiC, and 2.5 times higher than that of random-depositing nano-Pt with the same loading amount.« less

  4. Enhancing Mechanical and Thermal Properties of Epoxy Nanocomposites via Alignment of Magnetized SiC Whiskers.

    PubMed

    Townsend, James; Burtovyy, Ruslan; Aprelev, Pavel; Kornev, Konstantin G; Luzinov, Igor

    2017-07-12

    This research is focused on the fabrication and properties of epoxy nanocomposites containing magnetized SiC whiskers (MSiCWs). To this end, we report an original strategy for fabrication of magnetically active SiCWs by decorating the whiskers with magnetic (iron oxide) nanoparticles via polymer-polymer (poly(acrylic acid)/poly(2-vinyl pyridine)) complexation. The obtained whiskers demonstrated a substantial magnetic response in the polymerizing epoxy resin, with application of only a 20 mT (200 G) magnetic field. We also found that the whiskers chemically reacted with the epoxy resin, causing formation of an extended interphase near the boundary of the whiskers. The SiC whiskers oriented with the magnetic field demonstrated positive effects on the behavior of epoxy-based nanocomposites. Namely, the aligned MSiCWs enhanced the thermomechanical properties of the materials significantly above that of the neat epoxy and epoxy nanocomposite, with randomly oriented whiskers.

  5. Spectral irradiance curve calculations for any type of solar eclipse

    NASA Technical Reports Server (NTRS)

    Deepak, A.; Merrill, J. E.

    1974-01-01

    A simple procedure is described for calculating the eclipse function (EF), alpha, and hence the spectral irradiance curve (SIC), (1-alpha), for any type of solar eclipse: namely, the occultation (partial/total) eclipse and the transit (partial/annular) eclipse. The SIC (or the EF) gives the variation of the amount (or the loss) of solar radiation of a given wavelength reaching a distant observer for various positions of the moon across the sun. The scheme is based on the theory of light curves of eclipsing binaries, the results of which are tabulated in Merrill's Tables, and is valid for all wavelengths for which the solar limb-darkening obeys the cosine law: J = sub c (1 - X + X cost gamma). As an example of computing the SIC for an occultation eclipse which may be total, the calculations for the March 7, 1970, eclipse are described in detail.

  6. Coordinated EDX and micro-Raman analysis of presolar silicon carbide: A novel, nondestructive method to identify rare subgroup SiC

    NASA Astrophysics Data System (ADS)

    Liu, Nan; Steele, Andrew; Nittler, Larry R.; Stroud, Rhonda M.; De Gregorio, Bradley T.; Alexander, Conel M. O'D.; Wang, Jianhua

    2017-12-01

    We report the development of a novel method to nondestructively identify presolar silicon carbide (SiC) grains with high initial 26Al/27Al ratios (>0.01) and extreme 13C-enrichments (12C/13C ≤ 10) by backscattered electron-energy dispersive X-ray (EDX) and micro-Raman analyses. Our survey of a large number of presolar SiC demonstrates that (1) 80% of core-collapse supernova and putative nova SiC can be identified by quantitative EDX and Raman analyses with >70% confidence; (2) 90% of presolar SiC are predominantly 3C-SiC, as indicated by their Raman transverse optical (TO) peak position and width; (3) presolar 3C-SiC with 12C/13C ≤ 10 show lower Raman TO phonon frequencies compared to mainstream 3C-SiC. The downward shifted phonon frequencies of the 13C-enriched SiC with concomitant peak broadening are a natural consequence of isotope substitution. 13C-enriched SiC can therefore be identified by micro-Raman analysis; (4) larger shifts in the Raman TO peak position and width indicate deviations from the ideal 3C structure, including rare polytypes. Coordinated transmission electron microscopy analysis of one X and one mainstream SiC grain found them to be of 6H and 15R polytypes, respectively; (5) our correlated Raman and NanoSIMS study of mainstream SiC shows that high nitrogen content is a dominant factor in causing mainstream SiC Raman peak broadening without significant peak shifts; and (6) we found that the SiC condensation conditions in different stellar sites are astonishingly similar, except for X grains, which often condensed more rapidly and at higher atmospheric densities and temperatures, resulting in a higher fraction of grains with much downward shifted and broadened Raman TO peaks.

  7. Mechanism-Based FE Simulation of Tool Wear in Diamond Drilling of SiCp/Al Composites.

    PubMed

    Xiang, Junfeng; Pang, Siqin; Xie, Lijing; Gao, Feinong; Hu, Xin; Yi, Jie; Hu, Fang

    2018-02-07

    The aim of this work is to analyze the micro mechanisms underlying the wear of macroscale tools during diamond machining of SiC p /Al6063 composites and to develop the mechanism-based diamond wear model in relation to the dominant wear behaviors. During drilling, high volume fraction SiC p /Al6063 composites containing Cu, the dominant wear mechanisms of diamond tool involve thermodynamically activated physicochemical wear due to diamond-graphite transformation catalyzed by Cu in air atmosphere and mechanically driven abrasive wear due to high-frequency scrape of hard SiC reinforcement on tool surface. An analytical diamond wear model, coupling Usui abrasive wear model and Arrhenius extended graphitization wear model was proposed and implemented through a user-defined subroutine for tool wear estimates. Tool wear estimate in diamond drilling of SiC p /Al6063 composites was achieved by incorporating the combined abrasive-chemical tool wear subroutine into the coupled thermomechanical FE model of 3D drilling. The developed drilling FE model for reproducing diamond tool wear was validated for feasibility and reliability by comparing numerically simulated tool wear morphology and experimentally observed results after drilling a hole using brazed polycrystalline diamond (PCD) and chemical vapor deposition (CVD) diamond coated tools. A fairly good agreement of experimental and simulated results in cutting forces, chip and tool wear morphologies demonstrates that the developed 3D drilling FE model, combined with a subroutine for diamond tool wear estimate can provide a more accurate analysis not only in cutting forces and chip shape but also in tool wear behavior during drilling SiC p /Al6063 composites. Once validated and calibrated, the developed diamond tool wear model in conjunction with other machining FE models can be easily extended to the investigation of tool wear evolution with various diamond tool geometries and other machining processes in cutting different workpiece materials.

  8. Pressure-reaction synthesis of titanium composite materials

    DOEpatents

    Oden, Laurance L.; Ochs, Thomas L.; Turner, Paul C.

    1993-01-01

    A pressure-reaction synthesis process for producing increased stiffness and improved strength-to-weight ratio titanium metal matrix composite materials comprising exothermically reacting a titanium powder or titanium powder alloys with non-metal powders or gas selected from the group consisting of C, B, N, BN, B.sub.4 C, SiC and Si.sub.3 N.sub.4 at temperatures from about 900.degree. to about 1300.degree. C., for about 5 to about 30 minutes in a forming die under pressures of from about 1000 to 5000 psi.

  9. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    DOE PAGES

    Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; ...

    2016-04-06

    As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compactmore » containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.« less

  10. Local atomic structure of Pd and Ag in the SiC containment layer of TRISO fuel particles fissioned to 20% burn-up

    NASA Astrophysics Data System (ADS)

    Seibert, Rachel L.; Terrani, Kurt A.; Velázquez, Daniel; Hunn, John D.; Baldwin, Charles A.; Montgomery, Fred C.; Terry, Jeff

    2018-03-01

    The structure and speciation of fission products within the SiC barrier layer of tristructural-isotropic (TRISO) fuel particles irradiated to 19.6% fissions per initial metal atom (FIMA) burnup in the Advanced Test Reactor (ATR) at Idaho National Laboratory (INL) was investigated. As-irradiated fuel particles, as well as those subjected to simulated accident scenarios, were examined. The TRISO particles were characterized using synchrotron X-ray absorption fine-structure spectroscopy (XAFS) at the Materials Research Collaborative Access Team (MRCAT) beamline at the Advanced Photon Source. The TRISO particles were produced at Oak Ridge National Laboratory under the Advanced Gas Reactor Fuel Development and Qualification Program and sent to the ATR for irradiation. XAFS measurements on the palladium and silver K-edges were collected using the MRCAT undulator beamline. Analysis of the Pd edge indicated the formation of palladium silicides of the form PdxSi (2 ≤ x ≤ 3). In contrast, Ag was found to be metallic within the SiC shell safety tested to 1700 °C. To the best of our knowledge, this is the first result demonstrating metallic bonding of silver from fissioned samples. Knowledge of these reaction pathways will allow for better simulations of radionuclide transport in the various coating layers of TRISO fuels for next generation nuclear reactors. They may also suggest different ways to modify TRISO particles to improve their fuel performance and to mitigate potential fission product release under both normal operation and accident conditions.

  11. Local atomic structure of Pd and Ag in the SiC containment layer of TRISO fuel particles fissioned to 20% burn-up

    DOE PAGES

    Seibert, Rachel L.; Terrani, Kurt A.; Velázquez, Daniel; ...

    2018-03-01

    The structure and speciation of fission products within the SiC barrier layer of tristructural-isotropic (TRISO) fuel particles irradiated to 19.6% fissions per initial metal atom (FIMA) burnup in the Advanced Test Reactor (ATR) at Idaho National Laboratory (INL) was investigated. As-irradiated fuel particles, as well as those subjected to simulated accident scenarios, were examined. The TRISO particles were characterized using synchrotron X-ray absorption fine-structure spectroscopy (XAFS) at the Materials Research Collaborative Access Team (MRCAT) beamline at the Advanced Photon Source. The TRISO particles were produced at Oak Ridge National Laboratory under the Advanced Gas Reactor Fuel Development and Qualification Programmore » and sent to the ATR for irradiation. XAFS measurements on the palladium and silver K-edges were collected using the MRCAT undulator beamline. Analysis of the Pd edge indicated the formation of palladium silicides of the form Pd xSi (2 ≤ x ≤ 3). In contrast, Ag was found to be metallic within the SiC shell safety tested to 1700 °C. To the best of our knowledge, this is the first result demonstrating metallic bonding of silver from fissioned samples. Knowledge of these reaction pathways will allow for better simulations of radionuclide transport in the various coating layers of TRISO fuels for next generation nuclear reactors. In conclusion, they may also suggest different ways to modify TRISO particles to improve their fuel performance and to mitigate potential fission product release under both normal operation and accident conditions.« less

  12. Local atomic structure of Pd and Ag in the SiC containment layer of TRISO fuel particles fissioned to 20% burn-up

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Seibert, Rachel L.; Terrani, Kurt A.; Velázquez, Daniel

    The structure and speciation of fission products within the SiC barrier layer of tristructural-isotropic (TRISO) fuel particles irradiated to 19.6% fissions per initial metal atom (FIMA) burnup in the Advanced Test Reactor (ATR) at Idaho National Laboratory (INL) was investigated. As-irradiated fuel particles, as well as those subjected to simulated accident scenarios, were examined. The TRISO particles were characterized using synchrotron X-ray absorption fine-structure spectroscopy (XAFS) at the Materials Research Collaborative Access Team (MRCAT) beamline at the Advanced Photon Source. The TRISO particles were produced at Oak Ridge National Laboratory under the Advanced Gas Reactor Fuel Development and Qualification Programmore » and sent to the ATR for irradiation. XAFS measurements on the palladium and silver K-edges were collected using the MRCAT undulator beamline. Analysis of the Pd edge indicated the formation of palladium silicides of the form Pd xSi (2 ≤ x ≤ 3). In contrast, Ag was found to be metallic within the SiC shell safety tested to 1700 °C. To the best of our knowledge, this is the first result demonstrating metallic bonding of silver from fissioned samples. Knowledge of these reaction pathways will allow for better simulations of radionuclide transport in the various coating layers of TRISO fuels for next generation nuclear reactors. In conclusion, they may also suggest different ways to modify TRISO particles to improve their fuel performance and to mitigate potential fission product release under both normal operation and accident conditions.« less

  13. DOE Office of Scientific and Technical Information (OSTI.GOV)

    K. L. Davis; J. L. Rempe; D. L. Knudson

    Silicon carbide (SiC) temperature monitors 05R4-02-A KG1403 (300 LO) and 05R4-01-A KG1415 (400 LO B) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak irradiation temperatures. HTTL measurements indicate that the peak irradiation temperature for the 300 LO monitor was 295 {+-} 20 C and the peak irradiation temperature for the 400 LO B monitor was 294 {+-} 25 C. Two silicon carbide (SiC) temperature monitors irradiated in the Advanced Test Reactor (ATR) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak temperature during irradiation. These monitors were irradiated as part ofmore » the University of Wisconsin Pilot Project with a target dose of 3 dpa. Temperature monitors were fabricated from high density (3.203 g/cm3) SiC manufactured by Rohm Haas with a nominal size of 12.5 mm x 1.0 mm x 0.75 mm (see Attachment A). Table 1 provides identification for each monitor with an expected peak irradiation temperature range based on preliminary thermal analysis (see Attachment B). Post irradiation calculations are planned to reduce uncertainties in these calculated temperatures. Since the early 1960s, SiC has been used as a post-irradiation temperature monitor. As noted in Reference 2, several researchers have observed that neutron irradiation induced lattice expansion of SiC annealed out when the post-irradiation annealing temperature exceeds the peak irradiation temperature. As noted in Reference 3, INL uses resistivity measurements to infer peak irradiation temperature from SiC monitors. Figure 1 depicts the equipment at the HTTL used to evaluate the SiC monitors. The SiC monitors are heated in the annealing furnace using isochronal temperature steps that, depending on customer needs, can range from 50 to 800 C. This furnace is located under a ventilation hood within the stainless steel enclosure. The ventilation system is activated during heating so that any released vapors are vented through this system. Annealing temperatures are recorded using a National Institute of Standards and Technology (NIST) traceable thermocouple inserted into an alumina tube in the furnace. After each isochronal annealing, the specimens are placed in a specialized fixture located in the constant temperature chamber (maintained at 30 C) for a minimum of 30 minutes. After the 30 minute wait time, each specimen's resistance is measured using the specialized fixture and a calibrated DC power analyzer. This report discusses the evaluation of the SiC monitors and presents the results. Testing was conducted in accordance with Reference 3. Sections 2 and 3 present the data collected for each monitor and provide interpretation of the data. Section 4 presents the evaluated temperature results.« less

  14. Edge on Impact Simulations and Experiments

    DTIC Science & Technology

    2013-09-01

    silicon carbide ( SiC ) and aluminum oxynitride (AlON) ceramics are predicted using the Kayenta macroscopic constitutive model. Aspects regarding...damage propagation. 2.1. Silicon Carbide SiC is an opaque ceramic explored by the armor community. It is perhaps the most extensively characterized...the Weibull modulus for SiC . 4.1. Silicon Carbide Figures 3 and 4 compare experimental images with model predictions of EOI of SiC targets at respective

  15. SiC nanoparticles as potential carriers for biologically active substances

    NASA Astrophysics Data System (ADS)

    Guevara-Lora, Ibeth; Czosnek, Cezary; Smycz, Aleksandra; Janik, Jerzy F.; Kozik, Andrzej

    2009-01-01

    Silicon carbide SiC thanks to its many advantageous properties has found numerous applications in diverse areas of technology. In this regard, its nanosized forms often with novel properties have been the subject of intense research in recent years. The aim of this study was to investigate the binding of biologically active substances onto SiC nanopowders as a new approach to biomolecule immobilization in terms of their prospective applications in medicine or for biochemical detection. The SiC nanoparticles were prepared by a two-stage aerosol-assisted synthesis from neat hexamethyldisiloxane. The binding of several proteins (bovine serum albumin, high molecular weight kininogen, immunoglobulin G) on SiC particle surfaces was demonstrated at the levels of 1-2 nanograms per mg of SiC. These values were found to significantly increase after suitable chemical modifications of nanoparticle surfaces (by carbodiimide or 3-aminopropyltrietoxysilane treatment). The study of SiC biocompatibility showed a lack of cytotoxicity against macrophages-like cells below the concentration of 1 mg nanoparticles per mL. In summary, we demonstrated the successful immobilization of the selected substances on the SiC nanoparticles. These results including the cytotoxicity study make nano-SiC highly attractive for potential applications in medicine, biotechnology or molecular detection.

  16. X-ray micro computed tomography characterization of cellular SiC foams for their applications in chemical engineering

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ou, Xiaoxia

    Open-cell SiC foams clearly are promising materials for continuous-flow chemical applications such as heterogeneous catalysis and distillation. X-ray micro computed tomography characterization of cellular β-SiC foams at a spatial voxel size of 13.6{sup 3} μm{sup 3} and the interpretation of morphological properties of SiC open-cell foams with implications to their transport properties are presented. Static liquid hold-up in SiC foams was investigated through in-situ draining experiments for the first time using the μ-CT technique providing thorough 3D information about the amount and distribution of liquid hold-up inside the foam. This will enable better modeling and design of structured reactors basedmore » on SiC foams in the future. In order to see more practical uses, μ-CT data of cellular foams must be exploited to optimize the design of the morphology of foams for a specific application. - Highlights: •Characterization of SiC foams using novel X-ray micro computed tomography. •Interpretation of structural properties of SiC foams regarding to their transport properties. •Static liquid hold-up analysis of SiC foams through in-situ draining experiments.« less

  17. Fabrication of large aperture SiC brazing mirror

    NASA Astrophysics Data System (ADS)

    Li, Ang; Wang, Peipei; Dong, Huiwen; Wang, Peng

    2016-10-01

    The SiC brazing mirror is the mirror whose blank is made by assembling together smaller SiC pieces with brazing technique. Using such kinds of joining techniques, people can manufacture large and complex SiC assemblies. The key technologies of fabricating and testing SiC brazing flat mirror especially for large aperture were studied. The SiC brazing flat mirror was ground by smart ultrasonic-milling machine, and then it was lapped by the lapping smart robot and measured by Coordinate Measuring Machine (CMM). After the PV of the surface below 4um, we did classic coarse polishing to the surface and studied the shape of the polishing tool which directly effects removal amount distribution. Finally, it was figured by the polishing smart robot and measured by Fizeau interferometer. We also studied the influence of machining path and removal functions of smart robots on the manufacturing results and discussed the use of abrasive in this process. At last, an example for fabricating and measuring a similar SiC brazing flat mirror with the aperture of 600 mm made by Shanghai Institute of Ceramics was given. The mirror blank consists of 6 SiC sectors and the surface was finally processed to a result of the Peak-to-Valley (PV) 150nm and Root Mean Square (RMS) 12nm.

  18. Around Marshall

    NASA Image and Video Library

    1963-11-20

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. North of the massive S-IC test stand, the F-1 Engine test stand was built. Designed to assist in the development of the F-1 Engine, the F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This photo shows the progress of the F-1 Test Stand as of November 20, 1963.

  19. Around Marshall

    NASA Image and Video Library

    1962-07-03

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. North of the massive S-IC test stand, the F-1 Engine test stand was built. Designed to assist in the development of the F-1 Engine, the F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This photo depicts the construction of the F-1 test stand as of July 3, 1963. All four of its tower legs are well underway.

  20. Around Marshall

    NASA Image and Video Library

    1963-04-04

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army’s Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. North of the massive S-IC test stand, the F-1 Engine test stand was built. Designed to assist in the development of the F-1 Engine, the F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F-1 stand is keyed into the bedrock approximately 40 feet below grade. This photo, taken April 4, 1963 depicts the construction of the F-1 test stand foundation walls.

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